Reduced Corner Leakage in SOI Structure and Method

A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and replacing the removed portion of the conduction channel with insulator. This shaping of the conduction channel increases the distance to adjacent circuit elements which, if charged, could otherwise induce a voltage and cause a change in back-channel threshold in regions of the conduction channel and narrows and reduces cross-sectional area of the channel where the conduction in the channel is not well-controlled; both of which effects significantly reduce leakage of the transistor.

INTEGRATED CIRCUIT LAYOUT CELL, INTEGRATED CIRCUIT LAYOUT ARRANGEMENT, AND METHODS OF FORMING THE SAME

Various embodiments may provide an integrated circuit layout cell. The integrated circuit layout cell may include a doped region of a first conductivity type, a doped region of a second conductivity type opposite of the first conductivity type, and a further doped region of the first conductivity type at least partially within the doped region of the second conductivity type, and continuous with the doped region of the first conductivity type. The integrated circuit cell may include a first transistor having a control terminal, a first controlled terminal, and a second controlled terminal. The first controlled terminal and the second controlled terminal of the first transistor may include terminal regions of the second conductivity type formed within the further doped region of the first conductivity type. The integrated circuit cell may also include a second transistor. 1. An integrated circuit layout cell comprising:a doped region of a first conductivity type;a doped region of a second conductivity type opposite of the first conductivity type;a further doped region of the first conductivity type at least partially within the doped region of the second conductivity type, and continuous with the doped region of the first conductivity type;a first transistor having a control terminal, a first controlled terminal, and a second controlled terminal, the first controlled terminal and the second controlled terminal of the first transistor comprising terminal regions of the second conductivity type formed within the further doped region of the first conductivity type;a second transistor having a control terminal, a first controlled terminal, and a second controlled terminal, the first controlled terminal and the second controlled terminal of the second transistor comprising terminal regions of the first conductivity type;wherein the first controlled terminal of the first transistor is in electrical connection with the first controlled terminal of the second transistor; ...

Electronic package and circuit structure thereof

An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Integrated circuit layout cell, integrated circuit layout arrangement, and methods of forming the same

Various embodiments may provide an integrated circuit layout cell. The integrated circuit layout cell may include a doped region of a first conductivity type, a doped region of a second conductivity type opposite of the first conductivity type, and a further doped region of the first conductivity type at least partially within the doped region of the second conductivity type, and continuous with the doped region of the first conductivity type. The integrated circuit cell may include a first transistor having a control terminal, a first controlled terminal, and a second controlled terminal. The first controlled terminal and the second controlled terminal of the first transistor may include terminal regions of the second conductivity type formed within the further doped region of the first conductivity type. The integrated circuit cell may also include a second transistor.

Integrated circuit layout cell, integrated circuit layout arrangement, and methods of forming the same

Various embodiments may provide an integrated circuit layout cell. The integrated circuit layout cell may include a doped region of a first conductivity type, a doped region of a second conductivity type opposite of the first conductivity type, and a further doped region of the first conductivity type at least partially within the doped region of the second conductivity type, and continuous with the doped region of the first conductivity type. The integrated circuit cell may include a first transistor having a control terminal, a first controlled terminal, and a second controlled terminal. The first controlled terminal and the second controlled terminal of the first transistor may include terminal regions of the second conductivity type formed within the further doped region of the first conductivity type. The integrated circuit cell may also include a second transistor.

Substrate structure

A substrate structure is provided with a first electrical contact pad formed on an insulating layer of a substrate body, where the first electrical contact pad includes a first pad portion disposed on the insulating layer and at least one first protruding portion embedded in the insulating layer, so that the first pad portion is electrically connected to a circuit layer in the insulating layer by a conductive blind via, and the first protruding portion is free from being electrically connected to the circuit layer, such that, through a design of the first protruding portion, all surfaces of a metal layer formed on the insulating layer can meet the requirement of coplanarity.

Electronic package and circuit structure thereof

An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Electronic package and carrier thereof and method for manufacturing the same

An electronic package is provided and includes a carrier for carrying electronic components. Electrical contact pads of the carrier for planting solder balls are connected with a plurality of columnar conductors, and the conductors are electrically connected to a circuit portion in the carrier. By connecting a plurality of conductors with a single electrical contact pad, structural stress can be distributed and breakage of the circuit portion can be prevented.

Electronic package and manufacturing method thereof

An electronic package is provided, in which an electronic element and a plurality of shielding pillars are embedded in an encapsulating layer, a shielding layer is formed on one surface of the encapsulating layer to cover the electronic element and is in contact with and connected to the plurality of shielding pillars, and a circuit structure is formed on the other surface of the encapsulating layer to electrically connect to the electronic element. Therefore, when the electronic package is disposed on a circuit board, the design of the shielding layer and the plurality of shielding pillars can provide the electronic element with heat dissipation and shielding effects without a metal cover arranged on the electronic element.

Improved structure for the concrete compressive conveyor

Improved structure for automatic lubricating apparatus of driving cylinder in a concrete pumping machine

Electronic package and manufacturing method thereof

An electronic package and a manufacturing method thereof are provided, in which an electronic element is pasted on a routing layer that is configured with a plurality of conductive pillars, then the electronic element, the conductive pillars and the routing layer are covered with a cladding layer, and a circuit structure electrically connected to the electronic element and the conductive pillars is formed on the cladding layer. Therefore, the conductive pillars can be directly formed on the routing layer and the dielectric layer is omitted, so there is no need to consider the thickness of the dielectric layer, so as to facilitate the thinning of the electronic package.

Electronic package and carrier thereof and method for manufacturing the same

An electronic package is provided and includes a carrier for carrying electronic components. Electrical contact pads of the carrier for planting solder balls are connected with a plurality of columnar conductors, and the conductors are electrically connected to a circuit portion in the carrier. By connecting a plurality of conductors with a single electrical contact pad, structural stress can be distributed and breakage of the circuit portion can be prevented.

Electronic package and circuit structure thereof

An electronic package and a circuit structure thereof are provided, in which a circuit layer and an electrical function part are formed on a dielectric layer of the circuit structure, and the dielectric layer has at least one corner at a right angle, where a shape of the electrical function part at the corner and corresponding to the right angle is of a non-right angle shape and/or a routing path of the circuit layer at the corner and corresponding to the right angle is of a non-right angle shape, so that stress concentration can be reduced, thereby preventing the electronic package from warping.