ОБРАБОТКА ПОВЕРХНОСТИ МЕТАЛЛА

Изобретение относится к способу обработки неочищенной поверхности металла. Способ осуществляют следующим образом: металлическую поверхность покрывают органосиланом, а затем поверхность с покрытием облучают лазером. Также изобретение относится к способу соединения металлической поверхности с другой поверхностью (металлической или неметаллической), включающем обработку металлической поверхности путем нанесения органосилана и обработки поверхности с покрытием лазером, а затем соединение ее с другой поверхностью клеем. 2 с. и 16 з.п. ф-лы, 5 табл.

СИСТЕМА И СПОСОБ ДЛЯ ОБРАБОТКИ ОБЪЕКТОВ С ИСПОЛЬЗОВАНИЕМ ЛАЗЕРА

Изобретение относится к системе и способу лазерной обработки и может быть использовано для маркировки, сварки, сверления, резания и тепловой обработки различных конструкций в машиностроении. Система содержит устройство подачи объектов с предварительным расположением их на опорной поверхности, поддон для опоры объектов, гальванометрическую головку, лазерный источник и компьютер. Гальванометрическая головка состоит из первой широкоугольной камеры с фокусирующей линзой и с первым фильтром, расположенным на выходе первой камеры, второй узконаправленной камеры с фокусирующей линзой и со вторым фильтром, расположенным на выходе второй камеры, направляющего зеркала, гальванометрических отклоняющих зеркал и линзы, которая отображает, по меньшей мере, один объект, расположенный на поддоне. В компьютере установлено программное обеспечение распознавания формы для контролирования работы указанной первой камеры, указанной второй камеры, указанного лазерного источника и средств управления перемещением ...

СИСТЕМА И СПОСОБ ВИЗУАЛИЗАЦИИ РАСПРЕДЕЛЕНИЯ ЛАЗЕРНОЙ ЭНЕРГИИ, ОБЕСПЕЧИВАЕМОГО РАЗНЫМИ РИСУНКАМИ СКАНИРОВАНИЯ В БЛИЖНЕЙ ЗОНЕ

Группа изобретений относится к способу лазерной обработки (варианты), энергонезависимому машиночитаемому носителю данных и системе лазерной сварки. Осуществляют прием параметров лазерной обработки, связанных с источником лазерного излучения, и параметров перемещения лазера, связанных с перемещением лазерного пучка, обеспечиваемым сканирующей головкой для лазерной обработки. Параметры лазерной обработки и параметры перемещения лазера используют в ходе лазерной обработки, которую выполняют системой лазерной обработки, включающей в себя источник лазерного излучения и сканирующую головку для лазерной обработки. Задают распределение лазерной энергии во множестве точек в пределах перемещения лазерного пучка на основании по меньшей мере одного из полученных параметров лазерной обработки и параметров перемещения лазера. Осуществляют отображение визуального образа распределения лазерной энергии во множестве точек в пределах перемещения лазерного пучка. Визуальный образ распределения лазерной энергии ...

ПРОФИЛЬНОЕ ФОРМОВАНИЕ МЕТАЛЛОВ ПОСРЕДСТВОМ ЛАЗЕРНОЙ ПРОКОВКИ

Изобретения относятся к лазерной обработке импульсным ударом, в частности к способам и устройству создания форм и профилей в металлических секциях, и может найти применение в различных отраслях машиностроения. Создание форм и профилей в металлических секциях осуществляется посредством генерации индуцированного лазерным излучением сжимающего напряжения на поверхности металлического обрабатываемого изделия. Процесс лазерной обработки может генерировать глубокие сжимающие напряжения для придания формы даже толстым компонентам без индуцирования нежелательных растягивающих напряжений на металлической поверхности. Прецизионность индуцированного лазерным излучением напряжения обеспечивает возможность точного прогнозирования и последующего профилирования деталей. Световой пучок с энергией от 10 до 100 Дж/импульс фокусируется так, чтобы на поглощающем слое, нанесенном на металлическую поверхность, создать плотность потока энергии от 60 до 200 Дж/см2. Над поглощающим слоем протекает слой воды, используемой ...

СПОСОБ ИЗГОТОВЛЕНИЯ СТАЛЬНОЙ ТРУБЫ ЛАЗЕРНОЙ СВАРКОЙ

Изобретение относится к способу изготовления сваренной лазером стальной трубы. Лазерная сварка включает испускание двух лазерных лучей вдоль краев на верхней поверхности открытой трубы. Указанные лазерные лучи передают через разные оптические стекловолокна, и лучи имеют сфокусированные пятна, диаметры которых превышают 0,3 мм. Испускают лазерные лучи таким образом, чтобы передний лазерный луч и задний лазерный луч были наклонены к направлению выполнения сварки, причем углы падения определяют относительно направления, перпендикулярного верхней поверхности открытой трубы. Передний лазерный луч падает на верхнюю поверхность открытой трубы в направлении сварки перед задним лазерным лучом, а задний лазерный луч падает на верхнюю поверхность открытой трубы в направлении сварки после переднего лазерного луча. Угол падения переднего лазерного луча устанавливают больше угла падения заднего лазерного луча. Устанавливают промежуток между центром переднего лазерного луча и центром заднего лазерного ...

ТВЕРДОТЕЛЬНЫЙ ЛАЗЕР (ВАРИАНТЫ)

Изобретение относится к области лазерной техники и может быть использовано для формирования пучка Nd: YAG лазеров с расходимостью 10-20 мрад. Лазер включает излучатель, систему зеркал и оптическую стабилизирующую систему на оптической оси излучателя. По первому варианту расстояние между излучателем и оптической стабилизирующей системой и оптической стабилизирующей системой и выходом из зоны обработки выбираются из соотношения (0,8-1,2):(10-20) системой. По второму варианту оптическая стабилизирующая система выполнена трехэлементной из последовательно расположенных вдоль оси лазера рассеивающей двояковогнутой и двух рассеивающих длиннофокусных плосковыпуклых линз. Соотношение расстояний между двояковогнутой и первой плосковогнутой и первой плосковогнутой и второй плосковогнутой линзами находятся в пределах (1,2-1,7):(1,1-1,6). Обеспечено повышение стабильности геометрических параметров лазерного луча на обрабатываемой поверхности с неизменным положением фокального пятна. 2 с.п. ф-лы. 4 ил ...

ЭЛЕКТРОД СВЕЧИ ЗАЖИГАНИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение относится к способам изготовления свечей зажигания, а именно к способам соединения электрода свечи зажигания с благородным металлом. Технический результат заключается в повышении срока службы электрода свечи зажигания. Согласно изобретению электрод свечи зажигания соединяется с благородным металлом путем их локального нагрева в зоне соединения посредством излучения непрерывного лазера, причем благородный металл расплавляется не полностью, а лишь в зоне соединения. В качестве непрерывного лазера может использоваться лазер на иттрий-алюминиевом гранате, легированном неодимом (Nd:YAG-лазер), лазер на диоксиде углерода (CO2-лазер) или диодный лазер. Благородный металл может быть нанесен как на центральный, так и на боковой электрод. 2 н. и 12 з.п. ф-лы, 2 ил.

СПОСОБ ИЗГОТОВЛЕНИЯ ЩЕТИННЫХ ИЗДЕЛИЙ, В ЧАСТНОСТИ ЩЕТОК

В способе изготовления щетинных изделий, в частности щеток, в носителе щетины (основе), состоящей из термопластического материала, образовано определенное количество глухих отверстий (лунок), в каждое из которых вставляется до соприкосновения с дном лунки термопластический элемент щетины в виде отдельной щетинки или пучка щетинок. После этого основа и элементы щетины в зоне их контакта свариваются друг с другом вследствие того, что лазерные лучи, передаваемые сквозь основу или элемент щетины, попадают непосредственно в зону их контакта и там поглощаются с выделением тепла, что обеспечивает стойкость к выдерживанию отдельных щетинок или пучков при малом расходе материала и высокую производительность при изготовлении, а также позволяет щетке сохранить изгибную эластичность и способность к повторному распрямлению щетины. 7 з.п. ф-лы, 8 ил.

ВОЛОКОННАЯ ЛАЗЕРНАЯ СИСТЕМА СО МНОЖЕСТВОМ ПУЧКОВ

Группа изобретений относится к технологии ввода света, выходящего из нескольких волоконных лазерных устройств, в один оптический компонент и управления излучением, выходящим из таких лазерных устройств. Волоконная лазерная система со множеством пучков выходного излучения для создания нескольких пучков выходного излучения волоконного лазера. Система содержит множество модулей волоконной лазерной системы, множество выходных волокон и объемный оптический элемент. Модули волоконной лазерной системы создают множество отдельных пучков выходного излучения волоконного лазера. Соответствующие пучки выходного излучения различаются одной или несколькими характеристиками пучка. Каждое из выходных волокон выполнено с возможностью доставки одного из указанных отдельных пучков выходного излучения волоконного лазера. К объемному оптическому элементу присоединены каждое из указанных выходных волокон. Оптический элемент выполнен с возможностью приема отдельных пучков выходного излучения волоконного лазера ...

УСТРОЙСТВО И СПОСОБ НАНЕСЕНИЯ СЛОЕВ ПОРОШКООБРАЗНОГО МАТЕРИАЛА НА ПОВЕРХНОСТЬ

Изобретение относится к устройствам для нанесения слоев порошкообразного материала и может быть использовано может в устройствах для лазерного спекания. Устройство содержит покрывающий агрегат для нанесения слоя материала, который установлен с возможностью возвратно-поступательного перемещения между двумя конечными положениями и содержит лезвие для удаления лишнего материала. Устройство содержит устройство транспортировки материала, с помощью которого материал может быть транспортирован с одной стороны лезвия на его другую сторону. Устройство транспортировки материала содержит транспортирующий ролик или представляет собой псевдоожижающее устройство. Технический результат - сокращение потерь материала при нанесении слоев. 6 н. и 11 з.п. ф-лы, 6 ил.

СПОСОБ ОБРАБОТКИ НЕМЕТАЛЛИЧЕСКИХ МАТЕРИАЛОВ

Изобретение относится к сварочной технике, в частности к лазерной технике, и может найти применение для сварки, отжига и легирования полупроводниковых, керамических и стеклоподобных материалов. Обработку осуществляют путем облучения материалов импульсом лазерного излучения. Формируют импульс, временная форма которого описывается определенным соотношением в зависимости от плотности потока энергии лазерного излучения, констант b1 и b2, характеризующих фронт и спад лазерного импульса, от длительности лазерного импульса, текущего времени от начала воздействия, плотности энергии и максимального значения плотности потока лазерного излучения в импульсе. 2 ил.

ТОПЛИВНЫЙ ИНЖЕКТОР С КАМЕРОЙ ПРЕДВАРИТЕЛЬНОГО СМЕШИВАНИЯ С ЗАЩИТНЫМ ПОКРЫТИЕМ, НАПЛАВЛЕННЫМ ЛАЗЕРОМ

Изобретение относится к энергетике. Топливный инжектор газотурбинного двигателя содержит центральное тело, расположенное на продольной оси, и камеру предварительного смешивания, расположенную в радиальном направлении внешне относительно центрального тела и образующую кольцевой канал между ними. Кольцевой канал проходит от входного патрубка, соединенного с возможностью передачи потока с компрессором, к выходному патрубку, соединенному с возможностью передачи потока с камерой сгорания. Камера предварительного смешивания содержит первый участок, расположенный на входном патрубке и состоящий из нержавеющей стали, и второй участок, расположенный на выходном патрубке, состоящий из жаропрочного сплава на основе никеля и присоединенный к первому участку посредством лазерной наплавки. При этом наклоненная стенка первого участка образует острый угол с продольной осью. Также представлен способ изготовления камеры предварительного смешивания топливного инжектора газовой турбины. Изобретение позволяет ...

Способ соединения труб кожухотрубного теплообменника с трубной решеткой кожухотрубного теплообменника

Настоящее изобретение относится к способу соединения труб (221) кожухотрубного теплообменника (200) с трубной решеткой (230) кожухотрубного теплообменника (200), при этом трубы (221) и трубная решетка (230) изготовлены из алюминия или алюминиевого сплава, и при этом трубы (221) соединяют с трубной решеткой (230) посредством лазерной сварки с обеспечением соединения материалов. 9 з.п. ф-лы, 5 ил.

СОСТАВНАЯ ПРОКЛАДКА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ

Изобретение относится к области изготовления составных многослойных уплотнительных прокладок и может быть использовано при изготовлении двигателей внутреннего сгорания. Прокладка содержит первый и второй стальные листы прокладки и, по меньшей мере, один слой покрытия, нанесенный на поверхность первого или второго стального листа и размещенный между ними. Электрическое сопротивление слоя покрытия выше, чем сопротивление стальных листов прокладки. В прокладке выполнен ряд выровненных отверстий и упругие уплотняющие валики. Способ включает формирование отверстий и уплотняющих валиков в стальных листах, нанесение слоя покрытия на одну поверхность, по меньшей мере, одного из стальных листов прокладки и сварку слоев прокладки с покрытием с помощью лазера. Также способ может включать операцию размещения слоев в фасонной матрице. Технический результат - исключение отдельной операции соединения слоев, имеющих различное электрическое сопротивление. 3 н. и 17 з.п. ф-лы, 7 ил.

УСТАНОВКА ПОРОШКОВОЙ ЛАЗЕРНОЙ СТЕРЕОЛИТОГРАФИИ

Изобретение относится к лазерной технике, а именно к устройствам для получения объемных изделий в процессе селективного лазерного спекания порошковых материалов. Установка порошковой лазерной стереолитографии включает лазерное устройство с оптической системой, технологическую платформу для размещения спекаемой заготовки, приспособление для подачи порошка в рабочее пространство над технологической платформой, устройство контроля и поддержания заданной толщины порошкового слоя. Оптическая система выполнена с возможностью горизонтального перемещения по двум взаимно перпендикулярным направлениям. Технологическая платформа установлена с возможностью вертикального перемещения. Устройство контроля включает вибратор, датчик контроля уровня поверхности порошкового слоя и компенсатор уровня поверхности порошкового слоя. Компенсатор установлен между боковыми стенками технологической платформы и корпуса с возможностью вертикального перемещения с помощью привода, не зависимого от привода технологической ...

СПОСОБ ПОЛУЧЕНИЯ НАНОЧАСТИЦ ПЛАТИНОВЫХ МЕТАЛЛОВ

Изобретение относится к области нанотехнологий и может быть использовано в медицине, фармацевтике, косметологии. Наночастицы платиновых металлов получают в прозрачной жидкости на водной основе 7 при разрушении мишени 6 из платинового металла или сплава кавитацией, возникающей путем доставки лазерного излучения 2, представленного в виде импульсов сфокусированного излучения лазера на парах меди 1 с величиной энергии импульса 1-5 мДж и длительностью импульса 20 нс, с частотой следования импульсов 10-15 кГц и плотностью мощности 5,7 ГВт/см, через прозрачное дно кюветы 5 к мишени 6, помещенной в кювету 5 с прозрачной жидкостью на водной основе 7. Изобретение позволяет получать чистые наночастицы в виде чешуек с размером не более 200 нм без посторонних примесей. 1 ил., 3 пр.

СПОСОБ ИЗГОТОВЛЕНИЯ МЕТАЛЛИЧЕСКОЙ ТРУБКИ СО СВАРНЫМ ПРОДОЛЬНЫМ ШВОМ

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Способ удаления нежелательного материала с обрабатываемой поверхности подложки содержит операции: подачи вокруг нежелательного материала потока газа, практически инертного по отношению к упомянутому нежелательному материалу, и облучения упомянутого нежелательного материала излучением. Удаляемый нежелательный материал является практически непрерывной пленкой нежелательного материала, которой покрыт желательный материал. Облучение упомянутого нежелательного материала включает воздействие на предварительно определенную поверхность упомянутой практически непрерывной пленки энергетическими фотонами с пространственной и временной концентрациями в пределах предварительно определенной поверхности, достаточными для высвобождения соответствующего поверхности раздела участка пленки нежелательного материала с обрабатываемой поверхности и недостаточными для повышения температуры желательного материала выше температуры, при которой плавится желательный материал или физические свойства желательного материала ...

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СОПЛО ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

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Устройство дл упрочнени наружных цилиндрических и эксцентриковых поверхностей распределительных валов лучом лазера

УСТРОЙСТВО ДЛЯ ЛАЗЕРНОЙ МАРКИРОВКИ

... 1. Устройство для лазерной маркировки, содержащее источник лазерного излучения, коллиматор, средства оптической фокусировки лазерного луча, гальванометрический сканатор в составе двух зеркал для двумерного сканирования изделия, блок управления на основе компьютера с программными средствами и микроконтроллером, датчик положения изделия, интерфейс оператора и основание для размещения изделия, отличающееся тем, что в качестве источника лазерного излучения использован полупроводниковый лазерный диод непрерывного действия с регулятором напряжения на аноде диода.2. Устройство по п.1, отличающееся тем, что основание для размещения изделия выполнено подвижным.3. Устройство по п.1, отличающееся тем, что оно снабжено датчиком скорости перемещения изделия.

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Система лазерной маркировки прозрачных или полупрозрачных, преимущественно тонкостенных криволинейных изделий в конвейерном производстве

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Полезная модель относится к устройству лазерной резки хрупких прозрачных и непрозрачных неметаллических материалов, например, стекла и керамики, лазерным излучением и может быть использована в стекольной, авиационной, автомобильной, строительной и других отраслях промышленности. Техническим результатом предлагаемой полезной модели является получение торцов образца из хрупкого неметаллического материала с независимо регулируемыми формами фасок верхней и нижней поверхностей образца из хрупкого неметаллического материала. Устройство содержит первое и второе отражательные зеркала, выполненные с возможностью перемещения и направления лазерного пучка в область траектории реза, несущую раму с первой и второй вертикальной рейками, первой и второй горизонтальной рейками, пять крепежных элементов, делительное устройство первоначального лазерного пучка, фокусирующие линзы и держатели. Устройство имеет дополнительно третье и четвертое отражательные зеркала. Первая горизонтальная рейка выполнена с возможностью ...

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Лазерное устройство маломодового излучения для термической обработки материалов, содержащее парциальные генераторы с параллельным соединением активных элементов, работающих в одномодовом режиме, и объектив, отличающееся тем, что оно снабжено поворотным зеркалом с отверстием, диаметр которого равен внутреннему диаметру моды TEMOI излучения одного генератора на поверхности зеркала и наружному диаметру моды TEMOO излучения другого генератора в месте прохождения его через отверстие, установленным в месте пересечения пучков излучения.

УСТРОЙСТВО ДЛЯ ПЛАЗМЕННОЙ ОБРАБОТКИ

Полезная модель относится к оборудованию для плазменной обработки и предназначена для нанесения защитного покрытия на детали. Устройство содержит электродный узел, систему подвода газа, сопло с кольцевым каналом охлаждения, и токоподвод, который совмещен с трубопроводом для охлаждающей жидкости. Трубопровод снабжен дополнительным витком, внутри которого расположено сопло. В результате исключено попадание металла сопла на обрабатываемую поверхность, увеличен срок службы сопла.

СПОСОБ ГАЗОЛАЗЕРНОЙ РЕЗКИ

Использование: в лазерной технологии. Сущность изобретения: в способе газолазерной резки в начальной момент в зону реза направляют коротковолновый лазерный луч, а затем коаксиально ему направляют кольцевой луч длинноволнового лазера с одновременной подачей активного газа. Плотность мощности излучения регулируют в зависимости от соотношений мощности и диаметров фокальных пятен лучей. 1 з.п. ф-лы, 1 ил.

ФОКУСИРУЮЩАЯ СИСТЕМА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

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СПОСОБ ФОРМИРОВАНИЯ НАНОРАЗМЕРНЫХ ПОВЕРХНОСТНЫХ ПОКРЫТИЙ

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ПОРТАТИВНЫЙ ГЕЛИОСВАРОЧНЫЙ АППАРАТ

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Использование: изобретение относится к области лазерной обработки и может быть использовано для обработки различных материалов с изменяемой по траектории обработки толщиной, а также для обработки сложных по форме деталей. Сущность изобретения: решается задача оперативного изменения фокусного расстояния устройства, причем изменение фокусного расстояния - бесступенчатое и может проводиться во время прохождения лазерного луча через фокусирующие элементы. Устройство содержит два взаимно перпендикулярных оптически полупрозрачных фокусирующих стержня с изменяемой кривизной поверхности в поперечном сечении. Оба стержня имеют приводы и перемещаются по команде общей системы управления лазерной установкой в двух горизонтальных направлениях. Перемещения стержней взаимозависимы, что позволяет обеспечить точечную фокусировку. 6 ил.

СПОСОБ ИЗГОТОВЛЕНИЯ МЕТАЛЛИЧЕСКИХ ПОРОШКОВ

Изобретение относится к изготовлению металлических порошков. Способ включает нагрев металлического материала до температуры его плавления лазерным излучением, формирование из расплава капель, их охлаждение в свободном полете в среде нейтрального газа до температуры ниже температуры плавления металлического материала и сбор частиц порошка. Нагрев металлического материала до температуры его плавления ведут лазерным излучением путем прорезывания образца металлического материала с перемещением в сторону нетронутого массива материала со скоростью, обеспечивающей образование в месте контакта с ним зоны расплава. Формирование из расплава капель осуществляют в направлении движения струи плазмы посредством ее напора и/или струи сжатого нейтрального газа. Сбор частиц порошка осуществляют в объеме уловителя порошка, расположенного со стороны образца металлического материала, противоположной размещению лазерной головки, для формирования лазерного излучения. Обеспечивается повышение эффективности производства ...

СПОСОБ ЛАЗЕРНОЙ СВАРКИ ТОНКОЛИСТОВЫХ ИЗДЕЛИЙ ЦИЛИНДРИЧЕСКОЙ ФОРМЫ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Способ лазерной сварки тонкостенных цилиндрических изделий и устройство для его осуществления могут быть использованы при изготовлении консервных банок, аэрозольных баллончиков, при производстве труб различного назначения и др. Лазерную сварку материала проводят в области толщин с глубоким проплавлением. После сварки выполняют раскатку сваренной цилиндрической заготовки в валках до необходимых эксплуатационных толщин. Лазерная сварка в области толщин с глубоким проплавлением позволяет избежать непроваров, подрезов, прогаров, каплевидных образований по длине сварного шва, характерных для лазерной сварки тонкостенных изделий. Тем самым повышается качество сварного шва и надежность изделия при его эксплуатации. Окончательную раскатку осуществляют валками и оправкой. Это позволяет в предложенном устройстве использовать вращение трубы вокруг собственной оси одновременно для нескольких процессов: формообразования трубы, сварки, окончательной раскатки, резки на части. 2 с. и 2 з.п. ф-лы, 3 ил.

СПОСОБ МНОГОКОМПОНЕНТНОГО ЛАЗЕРНОГО ЛЕГИРОВАНИЯ ИНСТРУМЕНТАЛЬНЫХ СТАЛЕЙ

Способ многокомпонентного лазерного легирования инструментальных сталей, включающий нанесение на поверхность стали обмазки, содержащей карбиды тугоплавких металлов, бор и связующее вещество, и последующий нагрев обмазки и поверхности стали лазерным лучом, отличающийся тем, что нагрев поверхности стали осуществляют до температуры, равнойТ = ТC Т,где Т - температура поверхности стали;Ти Т- соответственно температура солидуса и ликвидуса обрабатываемой стали.

Способ обработки поверхности сплава никелида титана

Изобретение относится к способу обработки поверхности сплава никелида титана. Поверхность сплава никелида титана сканируют лучом лазера с плотностью мощности луча 1,5-0,5⋅10Вт/мм, средней мощностью лазерного облучения 0,48-56,2 Вт, с частотой импульсов 10-200 кГц и скоростью сканирования луча лазера 100-2000 мм/с. Для обработки используют эквиатомный сплав никелида титана, обладающий свойством памяти формы. Обработку ведут в атмосфере воздуха с использованием иттербиевого лазера. В результате получают коррозионно-стойкое покрытие за счет уменьшения или полного исключения никеля в составе поверхностного слоя. 2 з.п. ф-лы, 4 табл., 6 ил.

СПОСОБ ОБРАБОТКИ ПОВЕРХНОСТИ МЕТАЛЛОВ, ПРЕДНАЗНАЧЕННЫХ ДЛЯ НАНЕСЕНИЯ НА НИХ ПОКРЫТИЯ

Изобретение относится к способу обработки металлической поверхности перед нанесением покрытия и может быть использовано, например, перед нанесением твердых износостойких покрытий из нитрида или карбонитрида титана. Сущность изобретения: предложенный способ включает облучение металлической поверхности лазером. При этом облучение осуществляют сначала лазером на иттриевоалюминиевом гранате с неодимом типа Nd : YAG, а затем CO2 - лазером. 3 з. п.ф-лы, 1 ил.

СОПЛО ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

Использование: лазерная наплавка. Сущность изобретения: сопло содержит корпус и установленную в нем вставку с центральным отверстием для прохода лазерного луча. Вставка установлена в корпусе с кольцевым зазором для подачи через него порошкообразных материалов в зону обработки из патрубка, установленного перпендикулярно оси сопла. При этом срез вставки размещен относительно среза корпуса на 0,1 - 0,7 диаметра сопла. Патрубок установлен в верхней части корпуса и служит для подачи защитного газа. Через отверстие в корпусе сопла и отверстие вставки лазерный луч направляют в зону обработки, а через патрубок в кольцевую полость между корпусом и вставкой подают порошкообразный материал, при этом луч неподвижен, а деталь с наплавляемым материалом перемещается. 1 з.п. ф-лы, 1 ил.

СПОСОБ ЛАЗЕРНОЙ СВАРКИ ЗА ОДИН ПРОХОД Т-ОБРАЗНОГО УЗЛА ИЗ МЕТАЛЛИЧЕСКИХ ЭЛЕМЕНТОВ

... 1. Способ лазерной сварки для узла из металлических элементов, расположенных в форме Т, при этом ножка Т-образного узла образована пластиной (10, 30) с параллельными поверхностями, причем узел является доступным только со стороны головки Т-образного узла через наружную поверхность, при этом способ содержит следующие стадии: сборки Т-образного узла из элементов, смежных друг с другом, лазерной сварки узла через наружную поверхность головки Т-образного узла с помощью двух сварочных швов, выполняемых одновременно и параллельно друг другу и перпендикулярно наружной поверхности головки Т-образного узла, так что каждая из двух осей (21) сварки является касательной к одной из поверхностей пластины (10, 30), образующей ножку Т-образного узла. 2. Способ лазерной сварки по п.1, отличающийся тем, что два сварочных шва выполняют одновременно с помощью двухфокусной сварочной головки (20). 3. Способ лазерной сварки по п.1, отличающийся тем, что пластину (10) ножки снабжают лапками (11) заданной длины ...

СПОСОБ ЛАЗЕРНОЙ СВАРКИ ТРУБ

Предложенный способ лазерной сварки может использоваться для сварки труб из различных материалов малого диаметра. Новым в предложенном способе является то, что подачу лазерного излучения осуществляют поворотным устройством, находящимся перед фокусирующим устройством на расстоянии, равном l= F(1+F/R), а угол поворота поворотного устройства альфа равен (arctg X/F)/2, где F - фокусное расстояние фокусирующего устройства; R - радиус свариваемой трубы; X - отклонение свариваемого стыка от нормального положения. Поворотным устройством, которое может быть использовано в данном способе, служит любой отклоняющий элемент - зеркало, призма. Фокусирующее устройство может быть как зеркальнoго, так и проходного типов. Использование данного способа сварки позволит повысить качество сварного шва, а также улучшить динамические характеристики системы контроля положения стыка относительно падающего излучения, ...

СПОСОБ ЛАЗЕРНО-СВЕТОВОЙ ТЕРМИЧЕСКОЙ ОБРАБОТКИ МЕТАЛЛИЧЕСКИХ МАТЕРИАЛОВ С РЕГУЛИРУЕМЫМ ИЗМЕНЕНИЕМ ТЕМПЕРАТУРЫ

... 1. Способ лазерной термической обработки металлических листов, включающий воздействие лазерным лучом на зону указанной обработки, отличающийся тем, что в процессе указанной обработки регулируют скорость изменения температуры указанной зоны обработки посредством дополнительного воздействия на нее, по меньшей мере, одним световым лучом, при этом процесс обработки сопровождают взаимосвязанным перемещением пятен лазерного луча и, по меньшей мере, одного светового луча по линии термической обработки. 2. Способ по п.1, отличающийся тем, что лазерная термическая обработка представляет собой лазерную сварку. 3. Способ по п.2, отличающийся тем, что металлические листы сваривают встык. 4. Способ по любому из пп.1-3, отличающийся тем, что указанное взаимосвязанное перемещение является синхронным. 5. Способ по любому из пп.1-3, отличающийся тем, что регулируют скорость изменения температуры указанной зоны обработки за счет регулирования скорости нагрева указанной зоны, для этого пятно светового луча ...

СПОСОБ ОПРЕДЕЛЕНИЯ ПАРАМЕТРОВ ВОЗДЕЙСТВИЯ ЛАЗЕРНЫМ ИМПУЛЬСОМ НА ОБЪЕКТ ОБРАБОТКИ

Способ определения параметров воздействия лазерным импульсом на объект обработки, включающий перемещение объекта обработки относительно фокуса лазерного луча и определение геометрии, размеров и формы образовавшейся каверны, отличающийся тем, что вырезают листы из материала, идентичного материалу объекта обработки, обезжиривают их, накладывают друг на друга, выдерживают под прессом, и полученную модель устанавливают с возможностью вращения вокруг оси модели и поворота на угол между поверхностью модели и осью лазерного луча, фокусируют лазерный луч на поверхности модели, вращают модель с заданным числом оборотов под разными углами наклона относительно лазерного луча, одновременно смещая модель в радиальном направлении относительно фокуса лазерного луча, воздействуют на модель лазерными импульсами с заданной длительностью и мощностью, измеряют длину, ширину и глубину перфорации листов и по указанным измерениям определяют форму образовавшейся каверны в зависимости от скорости перемещения ее ...

СПОСОБ МНОГОКОМПОНЕНТНОГО ЛАЗЕРНОГО ЛЕГИРОВАНИЯ ИНСТРУМЕНТАЛЬНЫХ СТАЛЕЙ

Изобретение относится к области термической обработки металлов и сплавов, а точнее к лазерному легированию инструментальных сталей. Предлагаемый способ многокомпонентного лазерного легирования инструментальных сталей при режимах, обеспечивающих нагрев поверхности в интервале температур "солидус-ликвидус" приводит к снижению неровности поверхности в 4,6-4,8 раза по сравнению с прототипом и к повышению твердости в 1,28-1,3 раза. 1 с. п. ф-лы.

СПОСОБ ВОССТАНОВЛЕНИЯ ПОЛКИ РАБОЧЕЙ ЛОПАТКИ ИЛИ НАПРАВЛЯЮЩЕЙ ЛОПАТКИ

СПОСОБ ИЗГОТОВЛЕНИЯ ПРЕССФОРМ, ЛИТЕЙНОЙ ОСНАСТКИ И МОДЕЛЕЙ ИЗ ПЛОСКИХ СЕКЦИЙ

Способ изготовления пресс-форм, литейной оснастки и моделей, отличающийся тем, что состоит из последовательно наложенных одна на другую пластинчатых секций с профилями, вырезанных на лазерных установках, по координатам, полученным при проектировании по специальной методике "секущих плоскостей".

СИСТЕМЫ И СПОСОБЫ ЛАЗЕРНОЙ РЕЗКИ

СПОСОБ ИСПРАВЛЕНИЯ МЕТАЛЛИЧЕСКИХ ДЕТАЛЕЙ

... 1. Способ исправления металлических деталей, соединенных между собой высокотемпературной пайкой, отличающийся тем, что исправляют паяные зоны при помощи лазера для исправления, причем пиковая мощность лазера для исправления заключена между 1500 Вт и 3000 Вт, при этом лазер для исправления используется в импульсном режиме. ! 2. Способ по п.1, в котором исправление паяных зон осуществляют с использованием присадочного металла, нанесенного на паяные зоны. ! 3. Способ по п.2, в котором присадочный металл представлен в виде порошка, пасты, проволоки или предварительно спеченной формы. ! 4. Способ по п.2, в котором присадочный металл совместим с присадочным металлом, использовавшимся во время первоначальной пайки металлических деталей. ! 5. Способ по п.1, в котором лазером для исправления управляют полуручным способом. ! 6. Способ по п.1, в котором металлические детали выполнены из сплава на основе никеля или кобальта. ! 7. Способ по п.1, в котором время нарастания лазерного импульса меньше его ...

СПОСОБ ОСЛАБЛЕНИЯ ЭЛЕМЕНТА ОБЛИЦОВКИ АВТОМОБИЛЯ ДЛЯ ПОЛУЧЕНИЯ ОКНА ДЛЯ РАЗВЕРТЫВАНИЯ ПНЕВМОПОДУШКИ БЕЗОПАСНОСТИ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

... 1. Способ ослабления элемента облицовки автомобиля, покрывающего устройство с пневмоподушкой, причем упомянутое устройство с пневмоподушкой содержит пневмоподушку, выполненную с возможностью ее накачивания и развертывания при фиксировании столкновения, при этом упомянутое ослабление обеспечивает формирование окна для развертывания пневмоподушки в упомянутом устройстве под действием давления, создаваемого развертыванием пневмоподушки, при этом элемент облицовки имеет по меньшей мере один слой, причем способ включает в себя следующие этапы: выполнение частичного врезания в поверхность элемента облицовки посредством направления режущего луча от источника режущего луча на упомянутую поверхность и перемещения элемента облицовки относительно режущего луча в соответствии с заданным рисунком ослабления; генерирование первого и второго измерительных лучей от первого датчика и второго датчика соответственно, и направление первого и второго измерительных лучей к соответствующим противоположным сторонам ...

Установка для лазерной обработки материалов

Установка для лазерной обработки материалов, содержащая лазер и установленные последовательно на оптической оси лазера афокальную систему, средства фокусировки и преобразования сфокусированного излучения в световой пучок кольцевой формы, включающие выполненные в виде моноблока линзу и конический аксикон, расположенные соосно и снабженные средствами перемещения вдоль оптической оси, и устройство для двухкоординатного перемещения обрабатываемого изделия, отличающаяся тем, что, с целью повышения производительности, средства фокусировки и преобразования сфокусированного излучения выполнены в виде пластины из прозрачного материала с коническими углублениями или выступами, образующими конические аксиконы с одной стороны, и со сферическими выступами, образующими линзу с другой стороны, при этом пластина установлена на устройстве для двухкоординатного перемещения обрабатываемого изделия с возможностью перемещения вдоль оптической оси лазера и поворота относительно плоскости, перпендикулярной этой ...

УСТАНОВКА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

Изобретение относится к технологии сварки взрывом и может быть использовано для получения армированных композиционных материалов. Цель изобретения - снижение массы материала, повышение его жесткости и обеспечение возможности последующей прокатки. На поверхности нижнего листа выполняют продольные канавки, в которые перед взрывом укладывают легкоудаляемые стержни с навитыми на них проволочными спиралями. После взрыва стержни удаляют. Благодаря наличию цилиндрических полостей масса материала снижается. Наличие проволочных спиралей повышает его жесткость и обеспечивает возможность последующей прокатки. 2 ил.

Способ лазерной резки и установка для его осуществления

... 1. Способ лазерной резки, при котором резку осуществляют лазерным излучением, формируют пятно нагрева, ограниченное дугами концентрических окружностей, при помощи аксикона и фокусирующей системы, отличающийся тем, что, с целью повышения производительности путем исключения перестройки оптической системы при резке кольцевых шайб по различным радиусам, дуги формируют дискретно, при этом радиус и взаимное расположение дуг изменяют путем изменения длины и угла наклона образующей аксикона и фокусного расстояния фокусирующей системы, а резку осуществляют импульсным излучением. 2. Способ по п.1, отличающийся тем, что фокусное расстояние, угол наклона и длину образующей аксикона выбирают из соотношения li=ri-ri+1; ; где f - фокусное расстояние фокусирующей системы; α1 - угол наклона образующей аксикона при основании; R1 - радиус наибольшей концентрической окружности; αi - угол наклона i-го отрезка образующей; Ri - радиус i-й дуги; n - численный параметр аксикона, который при использовании прозрачного ...

Установка для лазерной обработки

... 1. Установка для лазерной обработки, содержащая лазер и установленные вдоль его оптической оси аксикон, афокальную насадку, фокусирующий объектив и рабочий стол, отличающаяся тем, что, с целью повышения производительности путем удаления продуктов из зоны обработки, она снабжена регулируемым генератором магнитного поля, один из полюсов которого выполнен в виде наконечника, расположенного соосно оптической оси лазера, и соединен с рабочим столом, а другой расположен над рабочим столом и синхронизатором импульсов магнитного поля и лазерного излучения. 2. Установка по п.1, отличающаяся тем, что она снабжена датчиком лазерного излучения, выполненным в виде разжимной втулки с расположенными в ней по периметру приемниками излучения и кольцевого экрана, прозрачного для лазерного излучения и установленного на приемниках излучения соосно наконечнику полюса генератора магнитного поля. 3. Установка по пп.1 и 2, отличающаяся тем, что она снабжена соплом для подачи защитного газа, установленным между ...

СПОСОБ ПОВЕРХНОСТНОГО УПРОЧНЕНИЯ АЛЮМИНИЕВЫХ СПЛАВОВ

Способ поверхностного упрочнения алюминиевых сплавов, включающий обработку поверхности лазерным излучением, отличающийся тем, что, с целью повышения однородности упрочнения, осуществляют предварительный подогрев поверхности до 400-450°С, а обработку лазерным излучением проводят при этой же температуре.

УСТАНОВКА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

Установка для лазерной обработки, содержащая лазер, модулятор лазерного излучения, зеркало, фокусирующую линзу и рабочий стол, отличающаяся тем, что, с целью повышения надежности, между линзой и рабочим столом установлен ротор с лопастями и приводом вращения, а модулятор электрически соединен с ротором.

СОСТАВ ОБМАЗКИ ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

Состав обмазки для лазерной обработки поверхностей деталей из чугуна, содержащей ферросилиций и глицерин, отличающийся тем, что, с целью повышения качества путем уменьшения шероховатости поверхности при обработке чугуна с ферритной и ферритно-перлитной металлической основой СО2-лазером с плотностью мощности (8,3·103)-(1,6·104)Дж/см2, в нее введены бура и мел при следующем соотношении ингредиентов, мас.%: Бура 18-20 Ферросилиций 2-12 Мел 18-20 Глицерин 48-62 ...

Способ ремонта металлических трубопроводов в полевых условиях и установка для его осуществления

Изобретение относится к области транспортировки газа и нефтепродуктов, а в частности к ремонту газо- и нефтепроводов в полевых условиях методом лазерной заварки. При заварке дефектного места в виде источника энергии для плавления используют лазерный луч, расплавляют присадочную проволоку в конвективном режиме без образования парогазового канала при мощности лазерного излучения не более 1500 Вт, скорости перемещения лазерного луча 1-25 мм/с, амплитуде поперечных колебаний луча 2-5 мм и частоте колебаний 5-100 Гц, при этом в область разделки дефекта подают одновременно лазерный луч, присадочную проволоку и защитный газ. Установка состоит из корпуса, в который встроены оптическая система транспортировки и фокусировки лазерного излучения, механическая система, обеспечивающая колебание лазерного луча, система подачи присадочной проволоки и защитного газа с керамическим соплом, система отвода продуктов испарения расплавленного металла и отработанного защитного газа, защитное стекло для наблюдения ...

Способ лазерной сварки вакуумно-плотных кольцевых, спиральных и прямолинейных швов металлических деталей и устройство для его осуществления

Изобретение относится к лазерной сварке, в том числе тонкостенных деталей, и может быть использовано для соединения высоковакуумных изделий, например деталей электровакуумных приборов из различных металлов и сплавов с предварительной разделкой кромок и без нее. В способе лазерной сварки кольцевых, спиральных и прямолинейных швов металлических деталей по касательной к свариваемому изделию в сварочную ванну подают присадочную проволоку, прижимают ее к свариваемому стыку, направляют в нее лазерный луч. Одновременно со сварочной проволокой подают защитный газ, сварной шов получают квазинепрерывным. Проволоку прижимают за счет внутреннего напряжения, возникающего при деформации в пределах упругости проволоки по дуге между срезом сменного калибровочного наконечника и точкой касания проволоки с изделием, проволока подается самовытягиванием. Техническим результатом предлагаемого изобретения является повышение вакуумной плотности и надежности сварных швов при реализации способа лазерной сварки кольцевых ...

Способ лазерной обработки неметаллических пластин

Изобретение относится к области технологических процессов и может быть использовано для лазерного отжига пластин из полупроводниковых, керамических и стеклообразных материалов. Техническим результатом изобретения являются исключение разрушения пластин термоупругими напряжениями в процессе обработки и повышение выхода годных. Технический результат достигается тем, что в способе лазерной обработки неметаллических пластин, заключающемся в облучении их поверхности непрерывным лазерным излучением с плотностью энергии, достаточной для достижения поверхностью пластины температуры отжига, предварительно рассчитывают условие термопрочности пластины по уравнению, связывающему механические свойства материала и функцию от критерия Фурье, и, при его невыполнении, предварительно нагревают пластину до температуры, определяемой из условия термопрочности. 1 ил.

СПОСОБ ИЗГОТОВЛЕНИЯ ОТВЕРСТИЯ

... 1. Способ изготовления отверстия (2) с ограничительными боковыми сторонами (3a, 3b) в детали (1), при котором на поверхность детали направляют лазерный луч (4), в результате чего материал детали испаряется, и образуется отверстие (2), отличающийся тем, что за несколько технологических операций каждый раз за счет прохождения лазерным лучом (4) боковой стороны (3a, 3b) отверстия (2) формируют часть (2а, 2b) объема отверстия, причем лазерный луч (4) ориентируют так, что он образует с пройденной боковой стороной (3a, 3b) угол больше 8°. ! 2. Способ по п.1, отличающийся тем, что лазерный луч (4) ориентируют так, что он образует с пройденной боковой стороной (3a, 3b) угол больше 10° и меньше 90°, предпочтительно больше 15° и меньше 80°, и особенно предпочтительно больше 20° и меньше 60°. ! 3. Способ по п.1, отличающийся тем, что на поверхность детали направляют импульсный лазерный луч (4). ! 4. Способ по п.3, отличающийся тем, что на поверхность детали направляют лазерный луч (4) переменной длительности ...

СПОСОБ ВЫПОЛНЕНИЯ ПРИ ПОМОЩИ ЛАЗЕРНОГО ПУЧКА ОТВЕРСТВИЙ В ДЕТАЛИ, ИЗГОТОВЛЕННОЙ ИЗ КОМПОЗИТНОГО МАТЕРИАЛА С КЕРАМИЧЕСКОЙ ОСНОВОЙ

... 1. Способ выполнения отверстий (30) при помощи лазерного пучка в детали, изготовленной из композитного материала с керамической основой, отличающийся тем, что включает в себя: ! первый этап ударного сверления, на котором путем фокусировки лазерного пучка вглубь детали, в которой будет вырезаться отверстие, выполняют исходное отверстие (20), имеющее начальный диаметр и ось отверстия (16, 18); ! второй этап кольцевого сверления, на котором путем смещения лазерного пучка и вращения его вокруг оси (16, 18) отверстия выполняют промежуточное отверстие (26), соосное исходному отверстию (20), но имеющее больший, чем исходное отверстие (20) диаметр; ! третий этап, на котором фокус лазерного пучка смещают вдоль оси (16, 18) отверстия, после чего выполняют окончательное отверстие (30) с использованием импульсного лазерного пучка. ! 2. Способ по п.1, отличающийся тем, что количество импульсов составляет от 1 до 5. ! 3. Способ по п.1, отличающийся тем, что перемещение фокуса лазерного пучка осуществляется ...

УСТРОЙСТВО ДЛЯ ЛАЗЕРНОЙ ИЛИ ПЛАЗМЕННОЙ РЕЗКИ ЗАГОТОВОК ИЗ ЛИСТОВОГО МАТЕРИАЛА, СВЕРНУТОГО В РУЛОН

СПОСОБ ЛАЗЕРНО-ВЗРЫВНОЙ РЕЗКИ

Изобретение относится к области лазерно-лучевой резки объемных конструкций, имеющих одну или несколько внутренних полостей. Целью изобретения является повышение эффективности лазерно-лучевой резки объемных конструкций, имеющих внутренние полости. Способ лазерно-взрывной резки заключается в направлении сфокусированного лазерного излучения в место предполагаемого реза, подаче на заключительной или промежуточной стадиях разрезания конструкции внутрь полости, одна из стенок которой разрезается, вспомогательного газа, в качестве которого используют горючий газ, и включении вновь лазерного излучения после наполнения полости горючим газом.

СПОСОБ ИЗГОТОВЛЕНИЯ ЛЮКА С КРЫШКОЙ В ИЗДЕЛИИ

Способ может быть использован при изготовлении изделий типа защитных кожухов и ограждений подвижных частей преимущественно металлорежущих станков. Способ заключается в том, что люк в изделии вырезают лазерной резкой, а вырезанную часть стенки изделия используют в качестве крышки этого же люка, предварительно снабдив люк и/или крышку элементами крепления. Снижается металлоемкость изделия и трудозатраты на изготовление.

СИСТЕМА И СПОСОБ ДЛЯ ИЗГОТОВЛЕНИЯ ГРАВИРОВАННОЙ ПЛАСТИНЫ

... 1. Система для изготовления гравированной пластины для глубокой печати листов ценных бумаг, содержащая компьютер и, по меньшей мере один гравировальный инструмент, управляемый указанным компьютером в соответствии с запрограммированным процессом гравирования, отличающаяся тем, что указанный компьютер запрограммирован для управления указанным гравировальным инструментом в соответствии с трехмерными управляющими пиксельными данными (X, Y, Z) карты эталонной глубины одного упомянутого листа для гравирования не гравированной пластины от пикселя к пикселю, ! при этом карта эталонной глубины формируется на компьютере на основании по меньшей мере одной, хранимой в компьютере, карты глубины оригинала, состоящей из трехмерного растрового изображения, по меньшей мере, части одной упомянутой ценной бумаги. ! 2. Система по п.1, отличающаяся тем, что указанная система запрограммирована для гравирования пластины для глубокой печати или промежуточной пластины для пластины для глубокой печати. ! 3. Система ...

СПОСОБ И УСТРОЙСТВО ДЛЯ СВАРКИ ЛИСТОВ В СВАРНУЮ ЛИСТОВУЮ ЗАГОТОВКУ ПОСРЕДСТВОМ ЛАЗЕРА

Листы, которые должны соединяться друг с другом посредством стыковой сварки, позиционируют с прилеганием друг к другу своими торцовыми поверхностями. Для уменьшения зазора в стыке до размера, требующегося для лазерной сварки по меньшей мере один лист пластически деформируют вдоль линии стыка так, что материал течет в сторону зазора, и уменьшают при этом ширину зазора. Таким образом можно сваривать разрезанные со значительно меньшей точностью листы.

УСТАНОВКА ДЛЯ ЛАЗЕРНОЙ СВАРКИ ТРУБОПРОВОДОВ

Установка для лазерной сварки трубопроводов может использоваться для прокладки трубопроводов различного назначения в полевых условиях. Установка состоит из передвижного устройства, платформы с размещенными на ней технологическим лазером, аппаратурой управления, электростанцией, вспомогательным оборудованием. Отличительной особенностью установки является наличие в ее составе магазина лучепроводов, на концах которого закреплены фокусирующие устройства с поворотными зеркалами, приводом вращения вокруг оси падающего излучения, приводом перемещения вдоль оси лучепровода. Магазин лучепроводов имеет привод перемещения и устройство поджима трубы к трубопроводу. Лучепроводы имеют на внешней стороне колеса. Такая конструкция установки позволит сократить вспомогательное время технологического цикла и тем самым повысить производительность работы.

СПОСОБ ПРОШИВКИ И МЕТАЛЛИЗАЦИИ ОТВЕРСТИЙ В ПЕЧАТНОЙ ПЛАТЕ ЛАЗЕРНЫМ ИЗЛУЧЕНИЕМ

Способ прошивки и металлизации отверстий в печатной плате лазерным излучением, заключающийся в формировании отверстий в подложке перемещением фокального пятна сфокусированного лазерного излучения и их металлизации, отличающийся тем, что перемещают фокальное пятно вертикально вниз с верхней поверхности платы до нижней поверхности платы, под которую перед прошивкой подкладывают подложку из электропроводящего материала, зеркально отражающего лазерное излучение, в процессе прошивки принимают отраженное лазерное излучение и после окончания прошивки отверстия получают резкое увеличение сигнала от отраженного лазерного излучения, а затем осуществляют металлизацию отверстия электрическим газовым разрядом, для чего прилагают напряжение одним полюсом к подложке, а другим полюсом - к кольцу, располагаемому над печатной платой и охватывающему лазерное излучение.

УСТРОЙСТВО ДЛЯ ПЕРЕМЕЩЕНИЯ ЛАЗЕРНОГО ЛУЧА ПРИ ОБРАБОТКЕ

... 1. Устройство для перемещения лазерного луча при обработке, включающее продольные направляющие, расположенные вдоль оси выходящего из технологического лазера лазерного луча, платформу с механизмом ее перемещения по продольным направляющим, закрепленное на платформе первое поворотное зеркало, перемещающееся с платформой вдоль оси лазерного луча и отражающее лазерный луч под углом 90o, консоль с механизмом ее перемещения вдоль оси отраженного лазерного луча, закрепленный с помощью подсоединительных фланцев на конце консоли поворотный блок с вторым поворотным зеркалом, направляющим лазерный луч вертикально вниз, а также подсоединенную к поворотному блоку оптико-фокусирующую систему, расположенную на оси направленного вниз лазерного луча, отличающееся тем, что на перемещающейся платформе с первым поворотным зеркалом закреплена вертикальная стойка, вдоль которой расположена ось лазерного луча, отраженного вертикально вверх под углом 90o от первого поворотного зеркала, на стойке имеется каретка ...

УСТАНОВКА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ ЛИСТОВЫХ МАТЕРИАЛОВ

... 1. Установка для лазерной обработки листовых материалов, включающая в свой состав технологический лазер, раму для размещения и закрепления листового материала, оптико-фокусирующую головку, двухкоординатную систему перемещения оптико-фокусируюшей головки по рабочему пространству, представляющую собой две каретки, перемещающиеся по двум взаимно перпендикулярным направлениям, систему передачи лазерного луча от технологического лазера к оптико-фокусирующей головке, имеющую в своем составе закрепленные на каретках поворотные зеркала, общую систему управления, а также систему отсоса отработанного газа с обратной стороны обрабатываемого материала, отличающаяся тем, что рама с листовым материалом, а также двухкоординатная система перемещения оптико-фокусирующей головки размещены вертикально, система отсоса имеет локальную камеру отсоса, прилегающую к обратной стороне листа напротив оптико-фокусирующей головки, при этом локальная камера отсоса имеет расположенную вертикально систему ее перемещения ...

РЕАКЦИОННОСПОСОБНЫЙ ТЕРМОПЛАСТИЧНЫЙ ПОЛИУРЕТАН НА ОСНОВЕ БЛОКИРОВАННЫХ ИЗОЦИАНАТОВ

СПОСОБ НАНЕСЕНИЯ ИЗОБРАЖЕНИЯ НА ЛИСТОВОЙ МАТЕРИАЛ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

... 1. Способ нанесения изображения на листовой материал, заключающийся в том, что, по крайней мере, частично запечатанный материал размещают перед средством для нанесения на него изображения, содержащим источник лазерного излучения, и направляют на заданные точки поверхности запечатанного материала импульсы, лазерного излучения, отличающийся тем, что на каждую заданную точку поверхности запечатанного материала воздействуют, по меньшей мере, двумя импульсами лазерного излучения, первым импульсом создают в зоне лазерного пятна активированный комплекс в красочном слое и наполнителе листового материала, вторым импульсом удаляют из зоны лазерного пятна перешедшую в жидкое состояние краску и вызывают взаимодействие перешедшего в жидкое состояние наполнителя листового материала с его основой, в результате чего образуют из совокупности пятен удаленной краски на поверхности материала видимое изображение, а из совокупности пятен измененной структуры наполнителя - изображение внутри материала, видимое ...

Способ обработки материалов с использованием многолучевого источника лазерного излучения

МИКРОСТРУКТУРНАЯ МЕМБРАНА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ

В микроструктурной мембране, включающей лист с двумя поверхностями, матрицу с отверстиями, проходящими с одной из поверхностей вглубь листа, каждое отверстие матрицы на поверхности окружено плоской зоной, а средний характеристический размер составляет 0,1-5000 мкм, при этом разброс размеров отверстий менее 10%, а продольные их оси параллельны одна другой. Площадь отверстий и пространственное распределение отверстий матрицы являются в целом однородными на одной из поверхностей, а лист выполнен из стекла, керамики, металла, полимера или комбинации этих материалов. Способ изготовления мембраны включает формирование маски и матрицы с отверстиями на ней, при этом маску размещают в непосредственной близости или в контакте с одной из поверхностей листа формируемой нембраны, а формирование отверстий производят одновременно по всей площади путем направленного воздействия на маску коллимированного потока реактивных ионов или энергетического луча. Маску формируют в непосредственном контакте с листом ...

УСТРОЙСТВО ДЛЯ СВАРКИ СВЕТОВЫМ ЛУЧОМ

Использование: сварка изделий больших толщин в приборостроении, радиоэлектронной промышленности, в машиностроении. Сущность изобретения: устройство для сварки световым лучом содержит эллипсоидный отражатель, газоразрядную лампу, установленную в фокусе отражателя, дополнительный лазерный источник излучения, расположенный вне отражателя. В отражателе имеется вставка в виде кольца с эллиптическим профилем, расположенная в зоне проекции пучка лучей лазерного источника излучения. Ось пучка лазера пересекает ось отражателя в зоне дугового разряда лампы, при этом точка пересечения лучей совпадает с ближним фокусом вставки. При использовании газовых лазеров с длиной волны 10,6 мкм вставка и лазер располагаются между цоколем лампы и рабочим фокусом отаражателя.

СПОСОБ И УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ РЕЛЬЕФНОЙ ПОВЕРХНОСТИ НА СТАЛЬНОМ ТИСНИЛЬНОМ ВАЛЕ

... 1. Способ формирования рельефной поверхности на стальном тиснильном вале посредством короткоимпульсного лазера, причем указанное формирование рельефной поверхности представляет собой выполнение макрорельефа с размерами элементов свыше 20 мкм и глубинами до 150 мкм и более, на основе сочетания следующих параметров:a) плотность энергии: 0,5-70 Дж/см;b) длина волны: 532-1 064 нм;c) частота повторения импульсов: от 1 кГц до 10 МГц;d) расстояние между импульсами на детали: 10-50 % от диаметра пучка для фемтосекундного лазера и 10-25 % или 40-50 % от диаметра пучка для пикосекундного лазера при высокой или низкой плотностях соответственно.e) положение фокальной плоскости лазерного пучка: у поверхности детали; иf) скорости перемещения пучка: до 100 м/с и выше.2. Способ по п. 1, отличающийся тем, что указанную деталь подвергают непрерывной обработке путем перемещения действующего пятна лазерного пучка по поверхности этой детали одновременно вдоль оси X и в окружном направлении.3. Способ по п. 2 ...

СПОСОБ И УСТАНОВКА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ ПОВЕРХНОСТИ СИТАЛЛА

... 1. Способ лазерной обработки поверхности ситалла, включающий лазерное облучение ситалловой пластины с предварительным нагревом и последующим поэтапным охлаждением, отличающийся тем, что ситалловую пластину помещают в замкнутый объем из теплоизолирующего материала, а лазерное облучение производят через оптический фильтр, пропускающий излучение в спектральном интервале (области) длины волны рабочего лазера и не пропускающий излучение инфракрасного диапазона волн.2. Установка для лазерной обработки поверхности ситалла содержащая CO-лазер, оптическую систему с фокусирующей линзой для сканирования пучка по поверхности образца, управляющий компьютер, рабочий стол с нагревателем и образцом, снабженная средствами защиты и охлаждения фокусирующей линзы от температурного воздействия, отличающаяся тем, что она снабжена камерой из теплоизолирующего материала, в которой размещен нагреватель с образцом, причем между камерой и фокусирующей линзой установлен оптический фильтр, закрывающий образец в замкнутом ...

СПОСОБ СВАРКИ ЛУЧОМ ЛАЗЕРА ИЗОЛИРОВАННЫХ ПРОВОДНИКОВ С ДЕТАЛЯМИ

СПОСОБ ЛАЗЕРНОЙ ОБРАБОТКИ

Изобретение относится к технологии лазерной обработки. Целью изобретения является повышение производительности, точности и снижение энергозатрат. В зону обработки направляют лазерное излучение с изменяющейся длиной волны. Излучение фокусируют оптической системой с положительной хроматической аберрацией положения фокуса. При обработке уменьшают длины волны со скоростью, соответствующей скорости перемещения пятна нагрева при геометрических или структурных изменениях в зоне обработки. В результате динамического изменения длины волны (периодического или непрерывного) в сторону ее уменьшения точка обработки смещается вглубь обрабатываемого материала. 4 з. п. ф-лы, 5 ил.

СПОСОБ СВАРКИ ЛУЧЕВЫМ ИСТОЧНИКОМ ЭНЕРГИИ

ПЛЕНКА ЗАМЕДЛЕНИЯ, СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ И ДИСПЛЕЙ

... 1. Пленка замедления, содержащая: ! подложку с множеством канавок на ее поверхности, вытянутых в определенном направлении на ее поверхности; и ! слой замедления, выполненный в контакте с поверхностью подложки и включающий жидкокристаллический материал, причем жидкокристаллический материал выровнен по направлению множества канавок и полимеризован, !при этом рисунок, образованный множеством канавок, имеет периодическую структуру с отклонениями, ! причем в периодической структуре разброс шага выступов и углублений составляет около 2-10%, а разброс по углу выступов и углублений составляет 3-8%. ! 2. Пленка замедления, содержащая: ! подложку с множеством канавок на ее поверхности, вытянутых в определенном направлении; и ! слой замедления, выполненный в контакте с поверхностью подложки и включающий жидкокристаллический материал, причем жидкокристаллический материал выровнен вдоль направления множества канавок и полимеризован, ! при этом рисунок, образованный множеством канавок, имеет периодическую ...

ОПТИКО-ФОКУСИРУЮЩАЯ ГОЛОВКА ДЛЯ ЛАЗЕРНОЙ ОБРАБОТКИ

Оптико-фокусирующая головка для лазерной обработки, включающая в свой состав трубчатый корпус для прохождения в нем лазерного луча, фокусирующую линзу внутри трубчатого корпуса, сопло для подачи в зону обработки газа, отличающаяся тем, что снаружи трубчатого корпуса имеется концентричное кольцо с возможностью его поворота вокруг оси лазерного луча, к кольцу на горизонтальном стержне прикреплено коромысло, на одном конце которого закреплена вспомогательная оптико-фокусирующая головка для направления вспомогательного лазерного луча в зону обработки, а на втором конце закреплено отражающее зеркало, устанавливаемое перпендикулярно оси отраженного от обрабатываемой поверхности лазерного луча вспомогательной оптико-фокусирующей головки.

СПОСОБ ЛАЗЕРНОЙ НАПЛАВКИ КОЛЕНЧАТЫХ И РАСПРЕДЕЛИТЕЛЬНЫХ ВАЛОВ

Изобретение относится к технологии лазерной наплавки коленчатых и распределительных валов двигателей внутреннего сгорания и других деталей машиностроения, работающих в условиях повышенного износа. Техническим результатом, на который направлено изобретение, является обеспечение бездефектной послойной наплавки самофлюсующихся материалов на никель-хромовой или железной основе непрерывным излучением СО2 - лазера, с обеспечением износостойкого слоя толщиной 3 мм и более. Данный технический результат обеспечивается тем, что в способе лазерной наплавки, при котором расплавляют лазерным лучом самофлюсующиеся порошки, подаваемые послойно в зону наплавляемой поверхности, причем вначале наплавляют подслой толщиной до 0,2 мм с одновременной очисткой поверхности и подогревом поверхностного слоя изделий до температуры не ниже 200°С, а затем проводят наплавку до заданной толщины в непрерывном режиме слоями толщиной 0,2 - 0,6 мм, причем 90% весовой доли наплавляемого порошка имеют частицы размером 0,1 ...

СПОСОБ ЛАЗЕРНОЙ СВАРКИ ТОНКОЛИСТОВЫХ МАТЕРИАЛОВ ЦИЛИНДРИЧЕСКОЙ ФОРМЫ

Предложенный способ лазерной сварки тонкостенных цилиндрических изделий может быть использован при изготовлении консервных банок, аэрозольных баллончиков, при производстве труб различного назначения и др. Отличительной особенностью способа является то, что лазерную сварку материала проводят в области толщин с глубоким проплавлением, с последующей раскаткой сваренной цилиндрической заготовки в валках до необходимых эксплуатационных толщин. Лазерная сварка в области толщин с глубоким проплавлением позволяет избежать непровары, подрезы, прогары, каплевидные образования по длине сварного шва, характерные для лазерной сварки тонкостенных изделий. Тем самым повышается качество сварного шва и надежность изделия при его эксплуатации.

Способ лазерно-дуговой обработки конструкций из низкоуглеродистой стали

Изобретение относится к лазерно-дуго- вой обработке и может быть использовано в металлургии и машиностроении для упрочнения сталей. Цель изобретения - увеличение прочностных свойств. При обработке используют луч лазера и электрическую дугу . Совмещают пятно нагрева луча лазера и электрической дуги Коаксиально лучу лазера подают углеродсодержащий газ, а через сопло дуговой горелки подают азот. Смесь имеет следующий состав, об.%: азот 30-40; углеродсодержащий газ остальное. Способ позволяет отказаться от покрытий для увеличения поглощения лазерного излучения. 1 табл.

Установка для лучевой обработки

OPTICAL SYSTEM FOR TRANSMITTING AND FOCUSING EMISSION

DEVICE FOR LASER PROCESSING

MACHINE-TOOL FOR WELDING OPTICAL WINDOWS WITH TUBES OF GAS LASER

Способ изготовления изделий

Изобретение относится к области металлургии, в частности к химико-термической обработке сталей для изготовления сердечников, якорей, полюсов электромагнитных устройств. Целью изобретения является повышение износостойкости при сохранении магнитных свойств и сокращение трудоемкости процесса. Способ осуществляется путем вакуумного отжига при 1000 - 1170°С в течение 30 - 45 мин с одновременной локальной цементацией с засыпкой полости, ограниченной уплотнительным седлом, смесью, содержащей активированный уголь, трилон - Б и гексаборид лантана при соотношении 1:1:1. Затем охлаждают изделие со скоростью 300 - 400°С/ч до 900°С, а до комнатной температуры - с общепринятой скоростью, после чего проводят лазерную закалку, притирку и доводку седельной части и окончательный отпуск при 300 - 350°С в течение 1,5 ч. 1 з.п. ф-лы, 1 табл.

Способ лазерной гравировки

Изобретение относится к методам электрофизической обработки материалов, в частности к способам нанесения различительных знаков, символов, рисунков, и может найти применение о различных областях для обработки изделий. Целью изобретения является формирование знака с выпуклой поверхностью. Гравировку выполняют сфокусированным пучком лазерного излучения, которое направляют на поверхность изделия, причем длину волны излучения выбирают из условия объемного поглощения его энергии материалом изделия , а перетяжку сфокусированного пучка .заглубляют под поверхность изделия на величину , определяемую теплофизическими свойствами материала, размерами наносимого знака (шириной его контура) и мощностью излучения. Скорость контурного перемещения луча по рисунку определяется необходимой величиной энергии для переработки материала изделия вдоль единичной его длины. (/) С ...

Способ определения режима лазерной резки заготовок различной толщины

Использование: машиностроение. Сущность изобретения: рез формируют сфокусированным лазерным излучением постоянной мощности и струей газа и по сигналу из зоны обработки определяют скорость резки для каждой толщины, соответствующую формированию кромок без облоя и грата. Для повышения производительности рез формируют на заготовке переменной толщины за один проход, а сигнал из зоны обработки используют для корректировки скорости резки в зависимости от толщины заготовки. В качестве сигнала используют направление истечения газовой струи из реза. 1 з п. ф-лы, 2 ил, ...

Устройство для автоматического отклонения и фокусирования луча при лазерной обработке

Использование: в сварке и в технике упрочняющей обработки деталей лучом лазера , преимущественно тел вращения сложного профиля с плавными криволинейными образующими. Сущность изобретения: для расширения технологических возможностей установок лазерного упрочнения необходимо обеспечить нормальное падение луча на обрабатываемую поверхность деталей сложного профиля, выдерживая при этом постоянным расстояние от фокусирующей линзы до поверхности обработки. Для этого в процессе работы копировальный рычаг , контактируя под действием пружины с деталью, аппроксимирует участок криволинейной поверхности и устанавливает поворотную рамку с фокусирующей линзой и выходным оптическим элементом по норма ли или другим наперед заданным углом к аппроксимированной поверхности. Кинематическая связь рамки с поворотной платформой , на которой установлен входной оптический элемент, обеспечивает соответствующий поворот этого элемента, что позволяет отклонить луч лазера на требуемый угол. Непрерывный контакт копировального ...

Термоимпульсная установка для удаления заусенцев

Способ лазерного легирования и наплавки

Использование: машиностроение. Сущность изобретения: при лазерном легирова- нии и наплавке на обрабатываемую поверхность под углом к нормали направляют сфокусированное лазерное излучение, заглубляя его фокус на заданную глубину, а вдоль направления отраженного от поверхности излучения в зону обработки вдувают наносимый порошок. Для повышения КПД и улучшения качества, величину заглубления фокуса берут равной AF-Vn ( dqn - Тпл Ят )2 , где Vn - скоро2qn а сть подачи порошка в зону обработки; d - диаметр частиц порошка; а- коэффициент температуропроводности порошка; Тпл. - температура плавления порошка; Ат - коэффициент теплопроводности порошка; qn - плотность мощности отраженного лазерного излучения. 1 ил., 1 табл.

Способ лазерной пробивки отверстий

Использование: сверление отверстий. Сущность изобретения: обрабатываемую заготовку герметично закрепляют на незамкнутой камере повышенного давления и подвергают ее воздействию лазерного излучения по заданной программе до образования сквозного отверстия. На внутреннюю поверхность заготовки ее закреплением на камере повышенного давления наносят слой магнитной жидкости и перед воздействием лазерного излучения камеру повышенного давления с герметично закрепленной заготовкой помещают в магнитное поле. 2 ил.

Устройство для лазерной многопозиционной обработки

Semiconductor Device and Method of Laser-Marking Laminate Layer Formed Over EWLB With Tape Applied to Opposite Surface

A semiconductor device has a semiconductor die with a plurality of bumps formed on contact pads disposed over its active surface. An encapsulant is formed over the semiconductor die. An interconnect structure is formed over the semiconductor die and encapsulant. The semiconductor die is mounted to a translucent tape with the bumps embedded in the translucent tape. The translucent tape has layers of polyolefin, acrylic, and polyethylene terephthalate. A back surface of the semiconductor die undergoes backgrinding to reduce die thickness. The tape undergoes UV curing. A laminate layer is formed over the back surface of the semiconductor die. The laminate layer undergoes oven curing. The laminate layer is laser-marked while the tape remains applied to the bumps. The tape is removed after laser-marking the laminate layer. Alternately, the tape can be removed prior to laser-marking. The tape reduces die warpage during laser-marking.

Methods of cutting glass using a laser

A method of cutting a glass article includes translating a laser beam relative to a first surface of the glass article. The laser beam includes a beam waist having a center. The center of the beam waist of the laser beam is positioned at or below a second surface of the glass article. The laser beam creates a plurality of defects along a score line in the glass article such that the plurality of defects extends a distance into the glass article, and at least some individual defects of the plurality of defects are non-orthogonal to the first surface of the glass article and are biased in a direction of translation of the laser beam. Glass articles having edge defects are also disclosed.

LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD

A laser processing apparatus includes: a chuck table for holding a single-crystal SiC ingot on a holding surface thereof; a laser beam applying unit for applying a laser beam to the single-crystal SiC ingot held on the holding surface of the chuck table; and a camera unit configured to capture an image of the single-crystal SiC ingot held on the holding surface of the chuck table. The chuck table includes a porous material making up the holding surface and a glass frame made of a non-porous material and having a recess defined therein and receiving the porous material fitted therein, and a negative pressure transfer path for transferring a negative pressure to the porous material fitted in the recess. 1. A laser processing apparatus comprising:a chuck table for holding a workpiece on a holding surface thereof;a laser beam applying unit configured to apply a laser beam to the workpiece held on the holding surface of said chuck table; anda camera unit configured to capture an image of the workpiece held on the holding surface of said chuck table;wherein said chuck table includes:a porous material making up said holding surface; anda glass frame made of a non-porous material and having a recess defined therein for receiving said porous material fitted therein, and a negative pressure transfer path for transferring a negative pressure to the porous material fitted in said recess.2. The laser processing apparatus according to claim 1 , wherein said porous material is provided as a porous glass plate.3. The laser processing apparatus according to claim 2 , further comprising:a table base movable with respect to said laser beam applying unit, said glass frame being mounted on said table base.4. The laser processing apparatus according to claim 2 , wherein said laser beam applying unit includes a laser oscillator for oscillating said laser beam and a condensing lens for focusing the laser beam oscillated by said laser oscillator claim 2 , said condensing lens being disposed ...

TEMPERED GLASS ARTICLE WITH SUB-SURFACE LASER ENGRAVING AND PRODUCTION METHOD

A glass article is provided that has sub-surface laser engraving and a prestressing of the surface. A production method for the glass article and the use of the glass article are also provided. The sub-surface laser engraving is arranged in a partial volume of the glass article that is under tensile stress, with tempering of the glass article being performed after the introduction of the sub-surface laser engraving. 1. A glass article comprising:a surface having a compressive stress;an internal region having at least one region of compressive stress and at least one region of tensile stress; anda sub-surface laser engraving arranged in the internal region, wherein the sub-surface laser engraving is arranged in the least least one region of tensile stress.2. The glass article according to claim 1 , wherein the glass article is a thermally tempered article.3. The glass article according to claim 1 , wherein the surface has a compressive stress of at least 50 Mpa.4. The glass article according to claim 1 , wherein the surface has a compressive stress of at least 90 MPa.5. The glass article according to claim 1 , wherein the glass article is a pane with a pane thickness of 2 mm to 12 mm.6. The glass article according to claim 5 , wherein the pane thickness is 4 mm to 6 mm.7. The glass article according to claim 5 , wherein the sub-surface laser engraving is at a minimum distance from the surface of the pane thickness divided by 4.8. The glass article according to claim 5 , wherein the sub-surface laser engraving is at a minimum distance from the surface of the pane thickness divided by 3.9. The glass article according to claim 1 , wherein the sub-surface laser engraving comprises a plurality of defects each having an average size of 10 μm to 1000 μm.10. The glass article according to claim 9 , wherein the average size is 20 μm to 100 μm.11. The glass article according to claim 9 , wherein the plurality of defects together form a feature selected from the group ...

LASER MACHINING DEVICE

A laser processing apparatus includes a support portion, a first laser processing head, a second laser processing head, a first vertical movement mechanism, a second vertical movement mechanism, a first horizontal movement mechanism, a second horizontal movement mechanism, and a controller configured to control rotation of the support portion, emission of a first and a second laser lights from the first and the second laser processing heads, and movement of a first and a second focusing points. 1. A laser processing apparatus comprising:a support portion on which a target is placed, the support portion being rotatable about an axis along a vertical direction;a first laser processing head configured to irradiate the target placed on the support portion with a first laser light to form a first modified region in the target;a second laser processing head configured to irradiate the target placed on the support portion with a second laser light to form a second modified region in the target;a first vertical movement mechanism configured to move at least one of the support portion and the first laser processing head to make a first focusing point move along the vertical direction, the first focusing point being a focusing point of the first laser light;a second vertical movement mechanism configured to move at least one of the support portion and the second laser processing head to make a second focusing point move along the vertical direction, the second focusing point being a focusing point of the second laser light;a first horizontal movement mechanism configured to move at least one of the support portion and the first laser processing head to make the first focusing point move in a horizontal direction;a second horizontal movement mechanism configured to move at least one of the support portion and the second laser processing head to make the second focusing point move along the horizontal direction; anda controller configured to control rotation of the support ...

LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD

A laser processing apparatus irradiates a target with a laser light to form a modified region along a virtual plane in the target. The laser processing apparatus includes a support portion, an irradiation portion, a movement mechanism, and a controller. The controller performs a first processing process of irradiating a first portion in the target with the laser light under a first processing condition, and a second processing process of irradiating a second portion more on an inner side than the first portion in the target with the laser light under a second processing condition different from the first processing condition, after the first processing process. 1. A laser processing apparatus that irradiates a target with a laser light to form a modified region along a virtual plane in the target , the laser processing apparatus comprising:a support portion configured to support the target;an irradiation portion configured to irradiate the target supported by the support portion with the laser light,a movement mechanism configured to move at least one of the support portion and the irradiation portion to move a position of a focusing point of the laser light along the virtual plane; anda controller configured to control the support portion, the irradiation portion, and the movement mechanism, whereinthe controller performsa first processing process of irradiating a first portion in the target with the laser light under a first processing condition, anda second processing process of irradiating a second portion more on an inner side than the first portion in the target with the laser light under a second processing condition different from the first processing condition, after the first processing process.2. The laser processing apparatus according to claim 1 , wherein the first portion is a portion in the target including a circumferential edge portion including a side surface intersecting with a laser light incident surface of the target.3. The laser processing ...

Method for Separating Thin Layers of Solid Material from a Solid Body

Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane () along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane () along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body. 1. (canceled)2. A method for producing layers of solid material , the method comprising:introducing or generating defects in a solid body to define a first detachment plane along which a first layer of solid material is to be separated from the solid body;providing a first receiving layer for holding the first layer of solid material on the solid body;applying heat to the first receiving layer to generate stresses in the solid body, the stresses causing a first crack to propagate in the solid body along the first detachment plane, wherein the first layer of solid material is separated from the solid body along the first crack;after separating the first layer of solid material from the solid body, introducing or generating defects in the solid ...

GLASS SHEET WITH IDENTIFICATION CODE

A glass sheet includes a symbol marked in the interior of the glass, the symbol forming a code. The symbol is marked in at least two dimensions including the dimension of the thickness of the glass sheet, portions of the symbol being marked at various depths in the thickness of the glass sheet. 1. A glass sheet comprising a symbol marked in an interior of the glass , the symbol forming a code;wherein the symbol is marked in at least two dimensions including a dimension of a thickness of the glass sheet, portions of the symbol being marked at various depths in the thickness of the glass sheet such that the symbol is readable both via a main face of the glass sheet and via an edge face of the glass sheet.2. The glass sheet as claimed in claim 1 , wherein each portion of the symbol is at a unique depth that is different from the depth of other rows and other columns claim 1 , respectively claim 1 , of the symbol.3. The glass sheet as claimed in claim 1 , wherein the various portions correspond to a sectioning of the symbol into various sections that are rectilinear and parallel.4. The glass sheet as claimed in claim 3 , wherein at least certain sections correspond to rows or columns of the symbol.5. The glass sheet as claimed in claim 1 , wherein the symbol is two-dimensional and of the Data Matrix claim 1 , QR Code or analogous type.6. The glass sheet as claimed in claim 1 , wherein the symbol is parallel or perpendicular to the closest edge face of the glass sheet.7. The glass sheet as claimed in claim 1 , wherein the symbol is marked in a plane inclined relative to the edge face of the glass sheet and to the main face of the glass sheet such that the symbol is identically readable both via the main face of the glass sheet and via the edge face of the glass sheet.8. The glass sheet as claimed in claim 7 , wherein said inclined plane is at 45° to said edge face of the glass sheet and to said main face of the glass sheet.9. A method for marking a symbol forming a code ...

Method for producing at least one recess in a material by means of electromagnetic radiation and subsequent etching process

A method for creating at least one recess, in particular an aperture, in a transparent or transmissive material, includes: selectively modifying the material along a beam axis by electromagnetic radiation; and creating the at least one recess by one or more etching steps, using different etching rates in a modified region and in non-modified regions. The electromagnetic radiation produces modifications having different characteristics in the material along the beam axis such that the etching process in the material is heterogeneous and the etching rates differ from one another in regions modified with different characteristics under unchanged etching conditions.

INTERFACE BLOCK; SYSTEM FOR AND METHOD OF CUTTING A SUBSTRATE BEING TRANSPARENT WITHIN A RANGE OF WAVELENGTHS USING SUCH INTERFACE BLOCK

A system for cutting a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum is provided that includes: a laser capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate is transparent; an optical element positioned in the light path of the laser such that the laser in conjunction with the optical element is capable of generating induced nonlinear absorption within at least a portion of the substrate; and an interface block composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is also transparent. The interface block is positioned in the light path and between the substrate and the optical element. Further, the substrate will include an edge when extracted from a sheet. 1. An interface block for use in a system for cutting at least one edge of a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum , comprising:a block of material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is transparent,wherein the block of material comprises a gradient index material, andfurther wherein the gradient index material has a non-uniform index of refraction.2. The interface block according to claim 1 , wherein the gradient index material comprises a plurality of sections claim 1 , each section having a different index of refraction.3. The interface block according to claim 1 , wherein the interface block is shaped in the form of a rectangular parallelepiped.4. The interface block according to claim 1 , wherein the interface block is shaped in the form of a triangular parallelepiped.5. The interface block according to claim 1 , further comprising:a notched shoulder formed therein that is adapted to ...

WAFER PROCESSING METHOD

There is provided a wafer processing method including a modified layer forming step. In the wafer processing method, the power of a pulse laser beam set in the modified layer forming step is set to power that forms modified layers and cracks in such a manner that a wafer is allowed to be divided into individual device chips before the thickness of the wafer reaches a finished thickness and, after the wafer is divided into the individual device chips, the time until the thickness of the wafer reaches the finished thickness is such a time that damage due to rubbing of the individual device chips against each other is not caused through grinding under a predetermined grinding condition set in a back surface grinding step. 1a protective member disposing step of disposing a protective member on the front surface of the wafer;a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the wafer on which the protective member is disposed at inside of the wafer along the planned dividing lines and irradiating the wafer with the pulse laser beam with predetermined power to form modified layers and cracks extending from the modified layers toward the front surface and a back surface; anda back surface grinding step of, after carrying out the modified layer forming step, holding a side of the protective member on a chuck table and grinding the back surface of the wafer by a grinding wheel under a predetermined grinding condition to divide the wafer into the individual device chips and carrying out grinding until the modified layers are removed and thickness of the wafer reaches a target finished thickness,wherein the predetermined power of the pulse laser beam set in the modified layer forming step is set to power that forms the modified layers and the cracks in such a manner that the wafer is allowed to be divided into the individual device chips before the thickness of the wafer reaches the ...

SYSTEM AND METHOD FOR PROCESSING RADIATION DETECTORS USING LASER BEAMS

A system, and method, for processing optical materials, such as scintillation materials, using laser beams is provided. In some aspects, the provided system includes a laser system configured to direct a laser beam to a focus in a scintillation material, and a holder configured to engage the scintillation material and position a portion of the scintillation material at the focus. The system also includes a controller configured to drive at least one of the laser system and the holder to form microstructures in the scintillation material having an altered crystal structure. 1. A system for processing a scintillation material using laser beams , the system comprising:a laser system configured to direct a laser beam to a focus in a scintillation material;a holder configured to engage the scintillation material and position a portion of the scintillation material at the focus; anda controller configured to drive at least one of the laser system and the holder to form microstructures in the scintillation material having an altered crystal structure.2. The system of claim 1 , the laser system further comprising at least one laser source configured to generate light defined by a pulse energy claim 1 , or a pulse duration claim 1 , or a wavelength claim 1 , or a pulse repetition claim 1 , or combinations thereof.3. The system of claim 1 , the laser system further comprising at least one focusing lens configured to direct the laser beam to the focus claim 1 , and defined by a lens numerical aperture claim 1 , or a lens working distance claim 1 , or both.4. The system of claim 2 , wherein the pulse duration is in one of a nanosecond range claim 2 , or a picosecond range claim 2 , or a femtosecond range claim 2 , or combinations thereof.5. The system of claim 2 , wherein the wavelength of light is about 532 nanometers claim 2 , or about 946 nanometers claim 2 , or about 1064 nanometers.6. The system of claim 2 , the laser system further comprising a beam splitter for ...

POLYCRYSTALLINE SiC WAFER PRODUCING METHOD

There is provided a polycrystalline SiC wafer producing method. In this method, in a modified layer forming step for forming an interface for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot, the formed interface is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of a pulse laser beam and then polycrystalline SiC splits into amorphous silicon and amorphous carbon at a position at which the power density is constant with absorption of the continuously-emitted pulse laser beam by amorphous carbon formed in advance. 1. A polycrystalline SiC wafer producing method for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot , the method comprising:a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the polycrystalline SiC ingot at a predetermined position from an irradiated surface of the polycrystalline SiC ingot and irradiating the polycrystalline SiC ingot with the pulse laser beam to form modified layers at a position at which an interface between the polycrystalline SiC wafer and the polycrystalline SiC ingot is to be formed; anda polycrystalline SiC wafer separating step of giving an external force to an upper side relative to the interface formed by the modified layer forming step and separating the polycrystalline SiC wafer from the interface,wherein the interface formed in the modified layer forming step is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of the pulse laser beam, the pulse laser beam emitted next is absorbed by the amorphous carbon formed by the pulse laser beam emitted in advance ...

CHIP AND METHOD OF MANUFACTURING CHIPS

A method of manufacturing chips from a semiconductor wafer having a plurality of streets on a front surface of the semiconductor wafer is provided. The method includes: forming a plurality of crack stopping structures on the semiconductor wafer at locations respectively aligned with intersections of the streets; irradiating a laser beam focused inside the semiconductor wafer along the streets to induce cracks; and breaking the irradiated semiconductor wafer along the cracks to the crack stopping structures, so as to separate the irradiated semiconductor wafer into the chips. 1. A method of manufacturing chips from a semiconductor wafer having a front surface on which a plurality of streets are defined and a back surface opposite to the front surface , the method comprising: 'etching the semiconductor wafer from the front surface to form a plurality of recesses, wherein the recesses serve as the crack stopping structures;', 'forming a plurality of crack stopping structures on the semiconductor wafer at locations respectively aligned with intersections of the streets, wherein the locations are on the front surface, and the forming comprises 'moving a focus point of the laser beam at a location in the semiconductor wafer between one of the recesses and the back surface during irradiating; and', 'irradiating a laser beam focused inside the semiconductor wafer along the streets to induce cracks, wherein the irradiating further comprisesbreaking the irradiated semiconductor wafer along the cracks to the crack stopping structures, so as to separate the irradiated semiconductor wafer into the chips.2. The method of claim 1 , wherein the breaking comprises:applying a tensile force to the irradiated semiconductor wafer.3. The method of claim 2 , wherein a protective tap is adhered to a back surface of the semiconductor wafer claim 2 , and the applying comprises:expanding the protective tap outwardly to apply the tensile force on the irradiated semiconductor wafer.48-. ( ...

METHOD FOR PRODUCING A TECHNICAL MASK

A method for producing a technical mask includes: providing a technical mask including at least one plate-shaped substrate, the plate-shaped substrate being transparent to at least one laser wavelength; and producing at least one opening in the mask by laser-induced deep etching. In an embodiment, an etching attack takes place at least temporarily on one side during laser-induced deep etching. 1. A method for producing a technical mask , comprising:providing a technical mask comprising at least one plate-shaped substrate, the plate-shaped substrate being transparent to at least one laser wavelength; andproducing at least one opening in the mask by laser-induced deep etching.2. The method according to claim 1 , wherein an etching attack takes place at least temporarily on one side during laser-induced deep etching.3. The method according to claim 1 , wherein a material of the at least one plate-shaped substrate comprises glass claim 1 , silicon claim 1 , or sapphire.4. The method according to claim 2 , wherein parameters during the laser modification or during the etching attack are selected such that openings in the mask have an opening angle of >5°.5. The method according to claim 1 , wherein the mask comprises at least one further component in addition to the at least one plate-shaped substrate.6. The method according to claim 5 , wherein the second component comprises a frame.7. The method according to claim 5 , wherein the second component comprises at least one device configured to clamp the at least one plate-shaped substrate.8. The method according to claim 7 , wherein the at least one plate-shaped substrate is at least partially provided with expansion structures.9. The method according to at least claim 1 , further comprising introducing slit-shaped relief openings into an edge region of the at least one plate-shaped substrate.10. The method according to claim 10 , wherein the relief openings have an elongated or spiral geometry.11. The method according to ...

Method for Producing a Bird Protection Device and Bird Protection Device

The invention relates to a method for producing a bird protection device arid to a bird protection device. According to the invention, a method for producing a bird protection device is proposed, wherein the bird protection device is made of an at least partially transparent material and contains an optical structure visible to a bird's eye. Here, the method comprises a radiation input, wherein the radiation input is implemented on and/or in the partially transparent material for forming the optical structure. The radiation input is preferably laser radiation. Suitable lasers for the radiation input are, for example, CO2 lasers with a wavelength of 1064 nm, picosecond lasers with a wavelength of 532 nm or nanosecond lasers with a wavelength of 532 nm. In one embodiment of the invention, the bird protection device furthermore comprises an element for increasing the contrast, wherein, for forming the optical structure, the radiation input is implemented on and/or in the element for increasing the contrast. 1. A method for producing a bird protection device , comprising the steps of:forming the bird protection device of an at least partially transparent material, andproviding an optical structure visible for a bird's eye, with a source of radiation, wherein the radiation is applied for forming the optical structure on and/or in the partially transparent material.2. The method for producing a bird protection device according to claim 1 , further comprising an element for contrast enhancement claim 1 , wherein for forming the optical structure the radiation is applied on and/or in the element for contrast enhancement.3. The method for producing a bird protection device according to claim 1 , wherein the optical structure is formed by employing laser radiation on and/or in the partially transparent material.4. The method for producing a bird protection device according to claim 1 , wherein the application of radiation into the optical structure causes a local change of ...

METHOD AND APPARATUS FOR PRECISION WORKING OF MATERIAL

A method for precise working of material, particularly organic tissue, comprises the step of providing laser pulses with a pulse length between 50 fs and 1 ps and with a pulse frequency from 50 kHz to 1 MHz and with a wavelength between 600 and 2000 nm for acting on the material to be worked. Apparatus, in accordance with the invention, for precise working of material, particularly organic tissue comprising a pulsed laser, wherein the laser has a pulse length between 50 fs and 1 ps and with a pulse frequency of from 50 kHz to 1 MHz is also described. 131-. (canceled)32. An apparatus for precision machining of an organic tissue , the apparatus comprising:a radiation source that produces a pulsed laser beam having a plurality of laser pulses;wherein the pulsed laser beam has a pulse length between 50 fs and 1 ps, a pulse frequency greater than 50 kHz, and an energy of an individual laser pulse between 100 nJ and 10 μJ; anda beam device that directs the pulsed laser beam,wherein the radiation source and the beam device are configured to apply the pulsed laser beam to the organic tissue that generates a plurality of cuts in the organic tissue by photodisruption, andwherein the plurality of the cuts divide a portion of the organic tissue into fragments capable of being extracted by a suction device.33. The apparatus according to claim 32 , further comprising:a holding mechanism that positions the organic tissue,wherein the holding mechanism includes an adapter and a vacuum suction ring for fixating a human eye.34. The apparatus according to claim 32 , further comprising:an operation microscope.35. The apparatus according to claim 34 ,wherein the beam device includes an objective of the operation microscope, andwherein the operation microscope has a beam splitter that reflects the pulsed laser beam into a beam path of the operation microscope.36. The apparatus according to claim 32 , wherein the suction device has a suction cannula.37. The apparatus according to claim 36 ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus includes a holder configured to hold a combined substrate; a peripheral modifying device configured to form a peripheral modification layer to an inside of a first substrate along a boundary between a peripheral portion and a central portion; an internal modifying device configured to form an internal modification layer to the inside of the first substrate along a plane direction; a holder moving mechanism configured to move the holder in a horizontal direction. The peripheral modifying device radiates laser light for periphery to the inside of the first substrate while moving the holder to perform eccentricity correction. The internal modifying device radiates laser light for internal surface without performing the eccentricity correction at least at a center portion of the inside of the first substrate. 1. A substrate processing apparatus configured to process a substrate , comprising:a holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate;a detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region;a peripheral modifying device configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof;an internal modifying device configured to form an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the holder along a plane direction of the first substrate;a holder moving mechanism configured to move the holder in a horizontal direction; anda controller configured to calculate an eccentric amount between a center of the holder and a center of the ...

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate; a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and an internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate. 1. A substrate processing apparatus configured to process a substrate , comprising:a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate;a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; andan internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate.2. The substrate processing apparatus of claim 1 , further comprising:a periphery removing unit configured to remove the peripheral portion of the first substrate starting ...

Incident radiation induced subsurface damage for controlled crack propagation in material cleavage

A cleaving system employs a shaper, a positioner, an internal preparation system, an external preparation system, a cleaver, and a cropper to cleave a workpiece into cleaved pieces. The shaper shapes a workpiece into a defined geometric shape. The positioner then positions the workpiece such that the internal preparation system can generate a separation layer at the cleaving plane. The internal preparation system focuses a laser beam internal to the workpiece at a focal point and scans the focal point across the cleaving plane to create the separation layer. The external preparation system scores the external surface of the workpiece at a location coincident with the separation layer. The cleaver cleaves the workpiece by propagating the crack on the external surface along the separation layer. The cropper shapes the cleaved piece into a geometric shape as needed.

METHOD OF MATERIAL PROCESSING BY LASER FILAMENTATION

A method is provided for the internal processing of a transparent substrate in preparation for a cleaving step. The substrate is irradiated with a focused laser beam that is comprised of pulses having an energy and pulse duration selected to produce a filament within the substrate. The substrate is translated relative to the laser beam to irradiate the substrate and produce an additional filament at one or more additional locations. The resulting filaments form an array defining an internally scribed path for cleaving said substrate. Laser beam parameters may be varied to adjust the filament length and position, and to optionally introduce V-channels or grooves, rendering bevels to the laser-cleaved edges. Preferably, the laser pulses are delivered in a burst train for lowering the energy threshold for filament formation and increasing the filament length. 124-. (canceled)25. A method of preparing a substrate for cleavage , the method comprising the steps of:irradiating said substrate with a single pulse of a focused laser beam, wherein said substrate is transparent to said focused laser beam, and wherein said single pulse has an energy and pulse duration selected to produce a single continuous filament within said substrate;translating said substrate relative to said focused laser beam to irradiate said substrate and produce additional single continuous filaments at locations in said substrate;said single continuous filaments form an array defining an internally scribed path for cleaving said substrate;each said single pulse of said focused laser beam is focused to provide a sufficient beam intensity within said substrate to cause self-focusing of the focused laser beam over an extended laser interaction focal volume, thereby producing a plasma channel within said substrate while avoiding optical breakdown, such that substantially uniform modification of said material occurs along said beam path, thereby forming a single continuous filament within said substrate; ...

APPARATUSES AND METHODS FOR LASER PROCESSING

A workpiece may be laser processed by a method that may include forming a contour line in the workpiece, and directing an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line. The contour line may include defects in the workpiece. The infrared laser beam may have a beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line. 1. A method for laser processing a workpiece , the method comprising:forming a contour line in the workpiece, the contour line comprising defects in the workpiece; anddirecting an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line, wherein the infrared laser beam has an annular beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line.2. The method of claim 1 , wherein an outer diameter of the annular beam profile is from about 0.5 mm to about 20 mm.3. The method of claim 2 , wherein an inner diameter of the annular beam profile is from about 5% to about 95% of the outer beam diameter.4. The method of claim 1 , wherein a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line on both sides of the contour line than directly on the contour line.5. The method of claim 1 , wherein the infrared laser beam is centered on the contour line.6. The method of claim 1 , wherein the infrared laser beam is produced by a carbon dioxide laser claim 1 , a carbon monoxide laser claim 1 , a solid state laser claim 1 , a laser diode claim 1 , or combinations thereof.7. The method of claim 1 , wherein the workpiece comprises an alkaline earth boro-aluminosilicate glass claim 1 , sapphire claim 1 , fused silica claim 1 , or combinations ...

SYSTEM AND METHOD FOR AUTOMATICALLY GENERATING TRAJECTORIES FOR LASER APPLICATIONS

A system for automatically generating trajectories of an object includes a trajectory generation module comprising a visual control algorithm and a processor configured via computer executable instructions to receive raw three dimensional (3-D) sensor data of an object, create a 3-D model of the object based on the raw 3-D sensor data, extract object features relating to a shape and/or surface from the 3-D model of the object, and generate trajectories based on the object features of the 3-D model of the object. 1. A system for automatically generating trajectories of an object comprising:{'claim-text': ['receive raw three dimensional (3-D) sensor data of an object,', 'create a 3-D model of the object based on the raw 3-D sensor data,', 'extract object features relating to a shape and/or surface from the 3-D model of the object, and', 'generate trajectories based on the object features of the 3-D model of the object.'], '#text': 'a trajectory generation module comprising a visual control algorithm and at least one processor configured via computer executable instructions to'}2. The system of claim 1 , further comprising:a control system of an apparatus, wherein the trajectory generation module is configured to output the trajectories to the control system for controlling the apparatus utilizing the trajectories.3. The system of claim 2 , wherein the apparatus comprises a laser apparatus configured to perform a process or action of the object based on the trajectories.4. The system of claim 3 , wherein the process or action of the laser apparatus comprises laser cleaning claim 3 , laser cutting claim 3 , laser polishing or laser grinding of the object.5. The system of claim 1 , wherein an extraction of the object features comprises identifying edges and depths in the 3-D model of the object.6. The system of claim 1 , wherein the trajectory generation module is further configured to display the 3-D model and associated trajectories of the object on a display of a user ...

WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

A wafer producing method produces a wafer from a semiconductor ingot. The method includes setting the focal point of a first laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot after flattening the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the first laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot. The focal point of a second laser beam having a transmission wavelength to the ingot inside the wafer to be produced is set in an area where no devices are to be formed, and the second laser beam is applied to the ingot to thereby form a production history for the wafer inside the ingot. 1. A wafer producing method for producing a wafer from a semiconductor ingot , said wafer producing method comprising a production history forming step of setting a focal point of a laser beam having a transmission wavelength to said ingot inside said wafer to be produced in an area where no devices are to be formed , and next applying said laser beam to said ingot to thereby form a production history for said wafer.2. The wafer producing method according to claim 1 , wherein said production history to be formed in said production history forming step includes any one of a lot number of said ingot claim 1 , a serial number of said wafer to be produced claim 1 , a date of production of said wafer claim 1 , a production plant where said wafer is to be produced claim 1 , and a kind of a wafer production apparatus contributing to the production of said wafer.3. A wafer producing method for producing a wafer from a semiconductor ingot claim 1 , said wafer producing method comprising:a flattening step of flattening an upper surface of said ingot;a separation layer forming step of setting a focal point of a first laser beam having a transmission wavelength to said ingot inside ...

High-efficiency line-forming optical systems and methods

A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light. 1. A line-forming optical system having an object plane and image plane and that forms a line image at the image plane , comprising:a laser source that emits an initial laser beam;a beam-conditioning optical system that receives the initial laser beam and forms therefrom a conditioned laser beam having a first intensity profile with a Gaussian distribution in at least a first direction;a first aperture device operably disposed at the object plane and that defines a first slit aperture that truncates the first intensity profile in the first direction to define a first transmitted light that constitutes at least 50% of the conditioned laser beam;a relay optical system that defines the object and image planes and that also defines an intermediate image plane at which is operably disposed a second aperture device, the relay optical system defining at the intermediate image plane a second intensity profile having a central peak and first side peaks immediately adjacent the central peak, wherein the second aperture device is configured to truncate the second intensity profile in the first direction and within each of the first side peaks to define a second transmitted light; andwherein the relay optical system forms the line image at the ...

PROCESSING METHOD, PROCESSING SYSTEM, PROCESSING PROGRAM, AND DATA STRUCTURE

A processing method of producing a processed object by processing a material, includes forming a hollow space in the processed object by processing by ablation, the processing being performed by projecting a laser to a region in the material to be processed. 19-. (canceled)10. A processing method of producing a processed object by processing a material , the processed object including a hollow space therein , the method comprising:forming the hollow space by processing by ablation; whereinthe processing includes projecting a laser to one or more regions in the material to be processed.11. The processing method according to claim 10 , whereinthe regions in the material to be processed are extracted in all surfaces of a slice obtained by slicing the material to a certain thickness in a certain direction; andthe laser is projected for each of the surfaces of the slice.12. The processing method according to claim 11 , whereinone of the surfaces of the slice includes divided surfaces that are divided; andthe laser is projected for each region in the divided surfaces to be processed.13. The processing method according to claim 10 , wherein the laser is projected simultaneously for each of the regions to be processed.14. A processing system with which a processed object is produced by processing a material claim 10 , the processed object including a hollow space therein claim 10 , the system comprising:a projector that projects a laser;a holder that holds the material;a driver that moves the projector and the holder relative to each other; anda controller that controls the projector and the driver such that the hollow space is formed by processing by ablation; whereinthe processing is performed by projecting the laser to one or more regions in the material to be processed.15. The processing system according to claim 14 , whereinthe regions in the material to be processed are extracted in all surfaces of a slice obtained by slicing the material to a certain thickness in a ...

OPTICAL GLASS AND METHOD OF CUTTING GLASS SUBSTRATE

Provided are a method of cutting a glass substrate which is capable of secure cutting by a simpler operation and an optical glass having high bending strength and dimension accuracy obtained by that method. The method of cutting the glass substrate comprising: forming selectively a plurality of reformed portions with a crack extending in the glass substrate from at least one of the plurality of reformed portions by radiating light to be focused inside the glass substrate so as to form a reformed region; and making a fracture occur in a thickness direction of the glass substrate along the reformed region so as to cut the glass substrate, wherein the crack has a tip portion at a depth of 3 to 20% of a thickness of the glass substrate from a cut surface, and an optical glass is obtained by the above cutting method. 1. An optical glass , comprising:a glass plate comprising a principal surface and an end surface;a reformed region formed on the end surface;a plurality of reformed portions formed by light radiated to be focused thereto in the reformed region; anda crack extending from the reformed portion on the end surface, having a tip portion at a depth of 3 to 20% of a plate thickness of the glass plate from the end surface.2. The optical glass according to claim 1 ,wherein a width in a plate thickness direction of the reformed region is from 13 to 50% of the plate thickness of the glass plate.3. The optical glass according to claim 1 ,wherein the reformed region is formed apart from the principal surface of the optical glass.4. The optical glass according to claim 1 ,wherein the plurality of reformed portions are formed at intervals of 3.0 to 38 μm.5. The optical glass according to claim 1 ,{'sup': '1/2', 'wherein a fracture toughness of the optical glass is from 0.2 to 0.74 MPa·m.'}6. The optical glass according to claim 1 ,{'sup': −7', '−7, 'wherein a thermal expansion coefficient of the optical glass is from 75×10to 150×10.'}7. A method of cutting a glass substrate ...

METHODS OF CUTTING GLASS USING A LASER

A method of cutting a glass article includes translating a laser beam relative to a first surface of the glass article. The laser beam includes a beam waist having a center. The center of the beam waist of the laser beam is positioned at or below a second surface of the glass article. The laser beam creates a plurality of defects along a score line in the glass article such that the plurality of defects extends a distance into the glass article, and at least some individual defects of the plurality of defects are non-orthogonal to the first surface of the glass article and are biased in a direction of translation of the laser beam. Glass articles having edge defects are also disclosed. 115-. (canceled)17. The glass article of claim 16 , wherein the plurality of defects extends into a majority of the thickness t of the glass article.18. The glass article of claim 16 , wherein the glass article comprises an ion-exchanged glass article having a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from a surface of the ion-exchanged glass article to a depth of layer claim 16 , and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress.19. The glass article of claim 18 , wherein the distance that at least a portion of the plurality of defects extends into the glass article is greater than the depth of layer.20. The glass article of claim 18 , wherein the central region has a tensile stress between about 20 and about 30 megapascals claim 18 , and the plurality of defects extends about halfway into the thickness of the ion-exchanged glass article. The present application is a divisional of, and claims the benefit of priority to, U.S. patent application Ser. No. 13/836,717 filed on Mar. 15, 2013, which claims the benefit of priority of U.S. Patent Application Ser. No. 61/655,690 entitled “Methods of Cutting Glass Using a Nanosecond Laser ...

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step. 1: A laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object , the method comprising:a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface; anda second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.2: The laser processing method according to claim 1 , wherein in the first step claim 1 , the first modified spots are formed so that a plurality of fractures respectively extending from the plurality of first modified spots are not connected to each other.3: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are formed so that a plurality of fractures respectively extending from the plurality of second modified spots are connected to each other.4: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are ...

METHOD AND DEVICE FOR MANUFACTURING AN OPHTHALMIC LENS

Disclosed are a method and device for manufacturing an ophthalmic lens for eyeglasses intended to be placed in front of an eye of a wearer, the ophthalmic lens having a desired optical function including a dioptric function adapted to a prescription of the wearer. The method includes: providing an optical element made of a first material having a first refractive index, the optical element being intended to be modified to manufacture the ophthalmic lens; providing data relative to the modification of the optical element enabling to obtain the desired optical function; determining at least one zone in the first material based on data; and modifying the refractive index of the first material to form a pattern in the determined zone with focused femtosecond laser pulses according to data so as to obtain an ophthalmic lens having the desired optical function. 1. A method for manufacturing an ophthalmic lens for eyeglasses intended to be placed in front of an eye of a wearer , the ophthalmic lens having a desired optical function comprising a dioptric function adapted to a prescription of the wearer , the method comprising:providing an optical element made of a first material having a first refractive index, the optical element being intended to be modified to manufacture the ophthalmic lens,providing data relative to the modification of the optical element enabling to obtain the desired optical function,determining at least one zone in the first material based on data, andmodifying the refractive index of the first material to form a pattern in the determined zone with focused femtosecond laser pulses according to data so as to obtain an ophthalmic lens having the desired optical function.2. The method according to claim 1 , wherein the data comprise:data relative to variation of spherical, cylinder and/or prismatic power to be applied to the optical element, and/ordata relative to variation of the optical design to be applied to the optical element, and/ordata relative ...

LASER MACHINING DEVICE AND LASER MACHINING METHOD

A laser processing apparatus that performs laser processing on an object to be processed by irradiating the object with laser light along a line to process includes a support table, a laser light source, a converging unit, a moving unit, an actuator, a displacement sensor, a temperature sensor, and a control unit. The control unit calculates the amount of driving of a converging unit that is performed by the actuator on the basis of a displacement of an incidence surface measured by the displacement sensor and a temperature of the converging unit detected by the temperature sensor, and controls the actuator such that the converging unit is driven according to the amount of driving when the moving unit relatively moves a converging point. 1: A laser processing apparatus that performs laser processing on an object to be processed by irradiating the object with laser light along a line to process , the laser processing apparatus comprising:a support table that supports the object;a laser light source that outputs the laser light;a converging unit including a converging lens for converging the laser light on the object supported by the support table;a moving unit that moves at least one of the support table and the converging unit along an incidence surface of the laser light in the object and relatively moves a converging point of the laser light along the line to process;an actuator for driving the converging unit in a direction crossing the incidence surface;a displacement sensor that measures a displacement of the incidence surface along the line to process;a temperature sensor that detects a temperature of the converging unit; anda control unit that calculates the amount of driving of the converging unit by the actuator on the basis of the displacement of the incidence surface measured by the displacement sensor and the temperature of the converging unit detected by the temperature sensor, and controls the actuator such that the converging unit is driven according ...

LASER BEAM IRRADIATING DEVICE

A laser light irradiation device includes a laser light source, a spatial light modulator, a controller, an objective lens, and an intensity distribution acquisition unit. The laser light source generates laser light. The spatial light modulator includes a display unit configured to display a phase pattern, allows the laser light to enter the display unit, and modulates the laser light in accordance with the phase pattern to emit the laser light. The controller controls the phase pattern to be displayed. The objective lens converges the laser light emitted from the spatial light modulator at the object. The intensity distribution acquisition unit acquires an intensity distribution of the laser light emitted from the spatial light modulator and entering the objective lens. The controller displays, on the display unit, the phase pattern including a marking configured to modulate part, in the laser light, not entering a pupil plane of the objective lens. 1: A laser light irradiation device configured to emit laser light to an object , the laser light irradiation device comprising:a laser light source configured to generate the laser light;a spatial light modulator including a display unit configured to display a phase pattern, the spatial light modulator allowing the laser light generated by the laser light source to enter the display unit and modulating the laser light in accordance with the phase pattern to emit the laser light from the display unit;a controller configured to control at least the phase pattern to be displayed on the display unit;an objective lens configured to converge the laser light emitted from the spatial light modulator at the object; andan intensity distribution acquisition unit configured to acquire an intensity distribution of the laser light emitted from the spatial light modulator and entering the objective lens, whereinthe controller displays, on the display unit, the phase pattern including a marking configured to modulate part, in the ...

SILICON WAFER FORMING METHOD

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer. 1. A silicon wafer forming method for forming a silicon wafer from a silicon ingot , comprising:a block ingot forming step of cutting the silicon ingot to form a block ingot;a planarizing step of grinding an end face of the block ingot to planarize the end face;a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; anda wafer forming step of separating the silicon wafer to be formed from the separation layer, after the separation layer forming step is performed.2. The silicon wafer forming method according to claim 1 , further comprising:a crystal orientation forming step of forming the silicon ingot with an orientation flat or a notch indicative of crystal orientation, before the block ingot forming step.3. The silicon wafer forming method according to claim 1 , further comprising:a production history forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the silicon wafer to be formed, with a focal point of the laser beam positioned in the inside of the silicon wafer to be formed in a region ...

LASER MACHINING DEVICE AND LASER MACHINING METHOD

A laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. A plurality of rows of modified regions include at least an entrance-surface-side modified region located on the laser light entrance surface side, an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface, and a middle modified region located between the entrance-surface-side modified region and opposite-surface-side modified region. When forming the middle modified region, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. When forming the entrance-surface-side modified region and opposite-surface-side modified region, the spatial light modulator is restrained from displaying the axicon lens pattern as the modulation pattern. 1. A laser processing device for converging laser light at an object to be processed so as to form a plurality of rows of modified regions along a laser light irradiation direction within the object along a line to cut , the laser processing device comprising:a laser light source emitting the laser light;a spatial light modulator modulating the laser light emitted from the laser light source; anda converging optical system converging the laser light modulated by the spatial light modulator at the object;wherein the plurality of rows of modified regions include at least:an entrance-surface-side modified region located on the laser light entrance surface side;an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface; anda middle modified region located between the entrance-surface-side ...

SiC WAFER PRODUCING METHOD

An SiC wafer is produced from a single crystal SiC ingot by a method that includes forming a plurality of breakable layers constituting a separation surface in the SiC ingot, each breakable layer including a modified layer and cracks extending from the modified layer along a c-plane, and separating part of the SiC ingot along the separation surface as an interface to thereby produce the SiC wafer. In forming the separation surface, the energy density of a pulsed laser beam is set to an energy density not causing the formation of an upper damage layer above the breakable layer previously formed due to the reflection of the pulsed laser beam from the breakable layer and not causing the formation of a lower damage layer below the breakable layer previously formed due to the transmission of the pulsed laser beam through the breakable layer. 1. An SiC wafer producing method for producing an SiC wafer from a single crystal SiC ingot having a first surface , a second surface opposite to said first surface , a c-axis extending from said first surface to said second surface , and a c-plane perpendicular to said c-axis , said c-axis being inclined by an off angle with respect to a normal to said first surface , said off angle being formed between said c-plane and said first surface , said SiC wafer producing method comprising:a breakable layer forming step of setting a focal point of a pulsed laser beam having a transmission wavelength to SiC inside said SiC ingot at a predetermined depth from said first surface, said predetermined depth corresponding to the thickness of said SiC wafer to be produced, and next applying said pulsed laser beam to said SiC ingot as relatively moving said SiC ingot and said focal point in a first direction perpendicular to a second direction where said off angle is formed, thereby forming a breakable layer inside said SiC ingot at said predetermined depth, said breakable layer including a modified layer extending in said first direction and ...

PORTABLE DEFECT MITIGATOR FOR ELECTROCHROMIC WINDOWS

Portable apparatus for identifying and mitigating defects in electronic devices disposed on substrates or windows are disclosed herein. Such defects can be visually perceived by the end user. The substrates or windows may include flat panel displays, photovoltaic windows, electrochromic devices, and the like, particularly electrochromic windows. 131-. (canceled)32. A portable apparatus for mitigating a defect in an electrochromic device on a window , the portable apparatus comprising:a first mechanism configured to detect the defect;a second mechanism configured to mitigate the defect;a third mechanism configured to align the portable apparatus with the window; andan illumination mechanism configured to illuminate the defect in the electrochromic device on the window and to substantially block energy from the second mechanism with a backstop when the second mechanism is mitigating the defect, the illumination mechanism being positioned on a first side of the window, and the first mechanism, the second mechanism, and the third mechanism being positioned on a second side of the window, opposite the first side.33. The portable apparatus of claim 32 , wherein:the first mechanism comprises at least one of a microscope, a camera, and a photo detector, andthe second mechanism comprises at least one of a laser, a heat source, an induction coil, a microwave source, and a voltage source.34. The portable apparatus of claim 32 , wherein the portable apparatus is configured to mount to the window.35. The portable apparatus of claim 32 , wherein the third mechanism includes a movable stage configured to align the first and second mechanisms.36. The portable apparatus of claim 32 , configured to mount to the window using suction.37. The portable apparatus of claim 32 , wherein the first mechanism employs at least one of reflection claim 32 , scattering claim 32 , and refraction to identify a defect signature.38. The portable apparatus of claim 32 , further comprising a controller ...

WAFER PROCESSING METHOD

A wafer processing method includes: cutting a device layer stacked on a semiconductor substrate along division lines to form cut grooves; positioning a focal point of a laser beam having a transmission wavelength to the semiconductor substrate inside an area of the semiconductor substrate corresponding to a predetermined one of the division lines and applying the laser beam to the wafer from a back surface of the wafer, thereby forming a plurality of modified layers inside the wafer along all of the division lines; and grinding the back surface of the wafer to be thinned, causing a crack to grow from each of the modified layers formed inside the area of the semiconductor substrate corresponding to the predetermined one of the division lines to the front surface side of the wafer, thereby dividing the wafer into individual device chips. 1. A wafer processing method of dividing a wafer into individual device chips , the wafer having a device layer being stacked on a front surface of a semiconductor substrate , the device layer having a plurality of devices individually formed in a plurality of regions partitioned by a plurality of crossing division lines on a front surface of the wafer , the wafer processing method comprising:a cut groove forming step of positioning a cutting blade on the front surface of the wafer, and cutting the device layer along each of the division lines to form a cut groove;a modified layer forming step of positioning a focal point of a laser beam having a transmission wavelength to the semiconductor substrate inside an area of the semiconductor substrate corresponding to a predetermined one of the division lines and applying the laser beam to the wafer from a back surface of the wafer, thereby forming a plurality of modified layers inside the wafer along all of the division lines;a protective member providing step of providing a protective member on the front surface of the wafer before or after the modified layer forming step is carried out; ...

HYBRID WAFER DICING APPROACH USING AN ACTIVELY-FOCUSED LASER BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits. 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits , the method comprising:forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits;patterning the mask with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; andplasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.2. The method of claim 1 , wherein the actively-focused laser beam laser scribing process comprises lowering a laser beam over a trough position of the semiconductor wafer.3. The method of claim 1 , wherein the actively-focused laser beam laser scribing process comprises raising a laser beam over a crest position of the semiconductor wafer.4. The method of claim 1 , wherein the actively-focused laser beam laser scribing process comprises pre-mapping a topography of the semiconductor wafer or a topography of a chuck for supporting the semiconductor wafer claim 1 , or both.5. The method of claim 1 , wherein the actively-focused laser beam laser scribing process comprises using a Gaussian source laser beam.6. The method of claim 5 , wherein the actively-focused laser beam laser ...

LASER LIGHT IRRADIATION DEVICE AND LASER LIGHT IRRADIATION METHOD

A laser light irradiation device includes: a laser light source; a spatial light modulator including a display unit, the spatial light modulator modulating the laser light in accordance with a phase pattern displayed on the display unit; a beam diameter conversion mechanism arranged on an optical path of the laser light between the laser light source and the spatial light modulator, the beam diameter conversion mechanism enlarging or reducing the beam diameter of the laser light; a lens insertion and removal mechanism including a lens configured to vary the beam diameter of the laser light, the lens insertion and removal mechanism being enabled to insert/remove the lens in/from the optical path; and a controller configured to control the phase pattern to be displayed. The controller displays the phase pattern configured to correct a wavefront aberration caused by insertion or removal of the lens. 1. A laser light irradiation device configured to emit laser light to an object , the laser light irradiation device comprising:a laser light source configured to generate the laser light;a spatial light modulator including a display unit configured to display a phase pattern, the spatial light modulator modulating the laser light generated by the laser light source in accordance with the phase pattern displayed on the display unit;a beam diameter conversion mechanism arranged on an optical path of the laser light between the laser light source and the spatial light modulator, the beam diameter conversion mechanism enlarging or reducing the beam diameter of the laser light;a lens insertion and removal mechanism including a lens configured to vary the beam diameter of the laser light, the lens insertion and removal mechanism being enabled to insert the lens in the optical path of the laser light between the laser light source and the spatial light modulator, the lens insertion and removal mechanism being enabled to remove the lens from the optical path; anda controller ...

LASER MACHINING DEVICE AND LASER MACHINING METHOD

A laser processing device forms a modified region in an object to be processed by converging ultrashort pulse laser light at the object and comprises a laser light source emitting the laser light, a converging optical system converging the laser light emitted from the laser light source at the object, and an aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range. 1: A laser processing device for forming a modified region in an object to be processed by converging ultrashort pulse laser light at the object , the laser processing device comprising:a laser light source emitting the laser light;a converging optical system converging the laser light emitted from the laser light source at the object; andan aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system;wherein, in an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object,the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range ...

Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor Devices

Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer. 1. A method of manufacturing a device substrate , the method comprising:providing a parent substrate that comprises a central region and an edge region, the edge region surrounding the central region;forming a detachment layer in the central region, the detachment layer extending parallel to a main surface of the parent substrate and comprising modified substrate material; andforming a groove in the edge region, the groove laterally enclosing the central region and running vertically and/or tilted to the detachment layer.2. The method of claim 1 , further comprising:splitting the parent substrate along a splitting surface through the detachment layer,wherein a portion of the parent substrate forms the device substrate.3. The method of claim 1 , wherein in the edge region claim 1 , a distance between the main surface of the parent substrate decreases with increasing distance to a lateral center of the parent substrate.4. The method of claim 1 , wherein the groove extends from a first main surface of the parent substrate into the parent substrate.5. The method of claim 1 , wherein the groove comprises an inner groove sidewall oriented to a lateral center of the parent substrate claim 1 , wherein the inner groove sidewall comprises a vertical sidewall section claim 1 , and wherein the detachment layer cuts the vertical sidewall section.6. The method of claim 1 , wherein the groove is spaced from a lateral outer surface of the parent substrate.7. The method of claim 1 , wherein the groove extends ...

SYSTEMS, METHODS, AND APPARATUSES FOR IN MACHINE PROFILING OF A LASER BEAM

A laser system includes a controller comprising a processor and a non-transitory machine-readable memory, a laser head configured to output a laser beam, a work bed positioned opposite the laser head, and a power meter communicatively coupled to the electronic control unit and integrated within the work bed. The laser system further includes a knife edge plate positioned between the power meter and the laser head, and a machine-readable instruction set stored in the non-transitory machine readable memory that causes the laser system to perform at least the following when executed by the processor: position the laser head at a distance from the power meter, cause the laser head to output the laser beam, translate the laser head across the power meter, receive power signals from the power meter as the laser beam is translated across the power meter, and calculate a spot size based on the power signals. 1. A laser system comprising:an electronic control unit comprising a processor and a non-transitory machine readable memory;a manipulable support communicatively coupled to the electronic control unit such that control signals generated by the electronic control unit control movement of the manipulable support;a laser head configured to output a laser beam;a work bed positioned opposite the laser head such that the laser beam output by the laser head is directed onto the work bed;a power meter communicatively coupled to the electronic control unit and integrated within the work bed;a knife edge plate positioned between the power meter and the laser head, wherein the knife edge plate forms a blocked portion and a transmission portion defined by a knife edge extending across the power meter; and position the laser head at a first distance from the power meter;', 'cause the laser head to output the laser beam;', 'translate the laser head across the power meter, wherein the laser beam is translated from the blocked portion across the knife edge into the transmission portion ...

WORKPIECE DIVIDING METHOD

A workpiece dividing method includes: a laser processing step of forming along each street a plurality of minute holes extending in a pulsed laser beam application direction; and a dividing step of pressing the streets by a pressing member to divide a wafer along the streets. The minute hole has one end opening at least one of a front surface and a back surface of the wafer and is decreased in diameter from the one end toward the other end. In the dividing step, the pressing member is pressed against that surface of the front surface and the back surface of the wafer at which the one end of the minute hole is not opening. 1. A workpiece dividing method for dividing a workpiece along streets set on the workpiece , comprising:a laser processing step of applying a pulsed laser beam to the workpiece along the street to form along the street a plurality of minute holes extending in a pulsed laser beam application direction; anda dividing step of pressing the streets by a pressing member to divide the workpiece along the streets, after the laser processing step is conducted,wherein the minute hole has one end opening at least at one of a front surface and a back surface of the workpiece and is decreased in diameter from the one end toward the other end, andin the dividing step, the pressing member is pressed against that surface of the front surface and the back surface of the workpiece at which the one end of the minute hole is not opening.2. The workpiece dividing method according to claim 1 , further comprising:a checking step of checking at which one of the front surface and the back surface of the workpiece the one end or the other end of the minute hole is formed, before carrying out the dividing step. The present invention relates to a method of dividing a workpiece along streets (division lines) set on the workpiece.A workpiece such as a wafer has devices such as integrated circuits (ICs) and large scale integrated circuits (LSIs) formed on a front surface thereof ...

METHOD OF PRODUCING SiC WAFER

An SiC wafer is generated from an SiC ingot by a peel-off plane generating step for generating a peel-off plane by forming a separation layer made up of a modified layer, and cracks extending from the modified layer along a c-plane, a plurality of times by indexing-feeding a focused point of a pulsed laser beam and the SiC ingot relative to each other in a direction in which an off-angle is formed, thereby forming a plurality of separation layers to generate the peel-off plane. The peel-off plane generating step includes relatively moving the focused point from an end to an opposite end of the SiC ingot in a forward stroke and relatively moving the focused point from the opposite end to the end of the SiC ingot in a backward stroke to trace back the separation layer that has already been formed in the forward stroke. 1a peel-off plane forming step of forming a peel-off plane in the SiC ingot by performing a separation layer forming step by positioning a focused point of a pulsed laser beam having a wavelength with which SiC is transmittable in the SiC ingot at a depth, from the first surface, corresponding to the thickness of a wafer to be produced from the SiC ingot, and applying a pulsed laser beam to the SiC ingot while the SiC ingot and the focused point are relatively processing-fed in a first direction perpendicular to a second direction in which the off-angle is formed, thereby forming a separation layer made up of a modified layer where SiC is separated into Si and C by a pulsed laser beam applied thereto and a pulsed laser beam applied next thereto is absorbed by the previously formed C, separating SiC into Si and C in a chain reaction, and cracks extending from the modified layer along the c-plane, the separation layer forming step being performed a plurality of times by indexing-feeding the SiC ingot and the focused point relatively to each other in the second direction in which the off-angle is formed, thereby forming a plurality of separation layers to ...

WORKPIECE CUTTING METHOD

An object cutting method includes: a first step of preparing an object; a second step of irradiating the object with a laser light to form at least one row of modified regions in a single crystal silicon substrate of the object so as to extend between the at least one row of modified regions and a second main surface of the object along each of a plurality of lines to cut and to form a fracture; and a third step of, after the second step, performing dry etching on the object from the second main surface side to form a groove opening to the second main surface, along each of the plurality of lines to cut. In the second step, the modified region is formed so that a not-fracture region, to which the fracture does not extend, is formed at a predetermined position in the thickness direction in the object. 1. An object cutting method , comprising:a first step of preparing an object to be processed including a single crystal silicon substrate and a functional device layer provided on a first main surface side;a second step of, after the first step, irradiating the object with a laser light to form at least one row of modified regions in the single crystal silicon substrate along each of a plurality of lines to cut and to form a fracture in the object so as to extend between the at least one row of modified regions and a second main surface of the object along each of the plurality of lines to cut; anda third step of, after the second step, performing dry etching on the object from the second main surface side to form a groove opening to the second main surface, in the object along each of the plurality of lines to cut,wherein in the second step, the modified region is formed so that a not-fracture region to which the fracture does not extend is formed at a predetermined position in a thickness direction in the object.2. The object cutting method according to claim 1 , wherein the modified region includes at least a first modified region on the first main surface side from ...

3D LASER PERFORATION THERMAL SAGGING PROCESS

In some embodiments, a method of forming a glass article comprises perforating a glass substrate along a contour with a laser forming a plurality of perforations, such that the contour separates a first portion of the glass substrate from a second portion of the glass substrate. After perforating, thermal forming the glass substrate into a non-planar shape with a mold, and separating the first portion of the glass substrate from the second portion of the glass substrate. 1. A method of forming a glass article , the method comprising:perforating a glass substrate along a contour with a laser forming a plurality of perforations, such that the contour separates a first portion of the glass substrate from a second portion of the glass substrate;after perforating:thermal forming the glass substrate into a non-planar shape with a mold; andseparating the first portion of the glass substrate from the second portion of the glass substrate.2. The method of claim 1 , wherein the contour forms an opening in the glass article after the first portion is separated.3. The method of claim 1 , further comprising claim 1 , before separating claim 1 , shrinking the first portion of the glass substrate relative to the second portion of the glass substrate by preferentially cooling the first portion.4. (canceled)5. (canceled)6. The method of claim 1 , wherein separating comprises applying pressure during separating the first portion of the glass substrate from the second portion of the glass substrate.7. (canceled)8. (canceled)9. (canceled)10. The method of claim 1 , wherein separating the first portion of the glass substrate from the second portion of the glass substrate comprises pulling the first portion of the glass substrate away from the mold.11. (canceled)12. The method of claim 1 , wherein separating the first portion of the glass substrate from the second portion of the glass substrate comprises pulling the first portion of the glass substrate into a recess in the mold.13. ( ...

AUTOMATIC MATERIAL RECOGNITION WITH LASER

A method determines a material property of a workpiece to be processed by a laser processing machine or a machine property of the laser processing machine. The method includes: piercing the workpiece by a laser beam generated the laser processing machine; detecting a measurement variable at a piercing-through time; and determining the material property or the machine property by way of a correlation between the measurement variable and the material property or the machine property. 1. A method for determining a material property of a workpiece to be processed by a laser processing machine or a machine property of the laser processing machine , the method comprising:piercing the workpiece by a laser beam generated the laser processing machine;detecting a measurement variable at a piercing-through time; anddetermining the material property or the machine property by way of a correlation between the measurement variable and the material property or the machine property.2. The method according to claim 1 , wherein the measurement variable is the piercing duration of the laser irradiation of the workpiece.3. The method according to claim 1 , wherein a laser intensity of the incident laser beam is increased by way of the duration of the laser irradiation.4. The method according to claim 3 , wherein the laser intensity is increased linearly over time.5. The method according to claim 1 , wherein the measurement variable is the laser intensity or a measurement variable characterizing the laser intensity at the piercing-through time.6. The method according to claim 1 , wherein the measurement variable is the temperature at the piercing-through time or the energy input of the laser beam at the piercing-through time.7. The method according to claim 1 , wherein a plurality of piercings are carried out claim 1 , and wherein a standard deviation or a variance of the measurement variable obtained is determined.8. The method according to claim 1 , wherein at least two piercings are ...

Splitting of a Solid Using Conversion of Material

The invention relates to a method for creating a detachment zone () in a solid () in order to detach a solid portion (), especially a solid layer (), from the solid (), said solid portion () that is to be detached being thinner than the solid from which the solid portion () has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid () which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid () to LASER radiation from the LASER light source so that the laser beams penetrate into the solid () via a surface of the solid portion () that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid () inside the solid () in a defined manner such that a detachment zone () or a plurality of partial detachment zones () is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid () is so high that the material forming the predefined portion is subject to modifications () in the form of a predetermined conversion of material. 115-. (canceled)16. A method , comprising:directing laser light from a laser light source into a solid surface of a solid, the laser light controlling a temperature of a predefined portion of the solid such that a detachment zone is formed in the solid, the temperature controlled by the laser light subjecting a material of the solid which forms the predefined portion to modifications which convert the material;arranging a receiving layer on the solid using a thermal application such that a crack expands in the solid along the detachment zone; andmoving the solid in a translational manner with respect to the laser light source such that a number of the modifications per cm2 of the solid surface per translational movement, through which the laser light penetrates into the solid to generate the modifications, is below a predefined maximum ...

STEALTH DICING METHOD AND APPARATUS

The present disclosure provides a stealth dicing method and apparatus. With the method, the focusing element focuses the laser beam on the surface of material to be diced, and the dynamic-equilibrium plasma channel is formed in the material to be diced by means of self-focusing and defocusing effect of plasma generated by ionizing the material to be diced. The modified layer may be formed in the material to be diced throughout the plasma channel, so as to realize stealth dicing. 1. A stealth dicing method , comprises:generating, by a laser, a laser beam of femtosecond pulses, and focusing by a focusing element the laser beam on a surface of material to be diced to form light filament in the material to be diced, wherein a peak power of the laser beam is greater than a power threshold of forming the light filament in the material to be diced;generating a dynamic-equilibrium plasma channel in the material to be diced by means of self-focusing and defocusing effect of plasma generated by ionizing the material to be diced;forming a modified layer through the plasma channel to realize the stealth dicing of the material to be diced.2. The method of claim 1 , wherein the peak power of the laser beam is greater than 10W/cm.3. The method of claim 1 , wherein the plasma channel has a length in a range of 1-3 cm claim 1 , and has a diameter in a range of 10-100 μm.4. The method of claim 2 , wherein the plasma channel has a length in a range of 1-3 cm claim 2 , and has a diameter in a range of 10-100 μm.5. The method of claim 1 , wherein the material to be diced is at least one of silicon claim 1 , silicon carbide claim 1 , sapphire and semiconductor.6. The method of claim 2 , wherein the material to be diced is at least one of silicon claim 2 , silicon carbide claim 2 , sapphire and semiconductor.7. A stealth dicing method claim 2 , comprises:generating, by a laser light source, a plurality of laser beams of different wavelengths, and adjusting a direction and a spot size of ...

LASER PROCESSING APPARATUS

A laser processing apparatus is provided wherein a laser beam of a wavelength which passes through a wafer having a surface on which a plurality of devices are disposed is irradiated along a schedule division line to separate the adjacent devices from each other to form a modification layer which continuously extends in a given length in the inside of the wafer. A mark portion is displayed in an overlapping relationship with a picked up image obtained by image pickup of a wafer on a display unit. If the mark portion is moved to a desired position of the picked up image displayed on the display unit, then coordinates which correspond to the desired position of the picked up image are stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into a storage unit. 1a chuck table configured to hold a wafer thereon;laser beam irradiation means for irradiating the laser beam on the wafer held on the chuck table;moving means for moving the chuck table and the laser beam irradiation means relative to each other in a processing feeding direction and an indexing feeding direction;display means for displaying a picked up image obtained by image pickup of the wafer held on the chuck table;inputting means for inputting a processing condition for processing of the wafer; andstorage means for storing the processing condition inputted by the inputting means;a mark portion being displayed in an overlapping relationship with the picked up image on the display means;coordinates which correspond to a desired position of the picked up image displayed on the display means when the mark portion is moved to the desired position of the picked up image being stored as a start point or an end portion of a scheduled division line, along which the modification layer is to be formed, into the storage means.. A laser processing apparatus wherein a laser beam of a wavelength which passes through a wafer having a surface on which a ...

SiC INGOT SLICING METHOD

Disclosed herein is an SiC ingot slicing method including: an initial separation layer formation step for scanning a focal point of a laser beam parallel to an end face of the SiC ingot along a scheduled separation plane, and forming a separation layer at a position at a distance from the end face; a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by the distance equal to the thickness of an SiC plate from the separation layer toward the end face, scanning the focal point parallel to the end face, repeating the formation of the separation layer, and forming the plurality of separation layers; and a separation step for applying an external force to the plurality of separation layers formed by the repetition step, peeling off the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates. 1. An SiC ingot slicing method comprising:an initial separation layer formation step for causing a laser beam at a wavelength that transmits through the SiC ingot to enter the SiC ingot from an end face thereof, forming a focal point inside the SiC ingot, scanning the focal point in a planar manner along a scheduled separation plane parallel to the end face to thereby form a separation layer at a depth corresponding to the scheduled separation plane;a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by a distance equal to a thickness of an SiC plate to be peeled off from the separation layer toward the end face, scanning the focal point parallel to the end face in a planar manner to thereby form a plurality of separation layers; anda separation step for applying, after the repetition step, an external force to the plurality of separation layers formed by the repetition step, separating the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates.2. The SiC ingot slicing method of claim 1 , further ...

METHOD OF MANUFACTURING ELEMENT CHIP

Method of manufacturing an element chip which can suppress residual debris in plasma dicing. A back surface of a semiconductor wafer is held on a dicing tape. Then, a surface of the wafer is coated with a mask that includes a water-insoluble lower mask and a water-soluble upper mask. Subsequently, an opening is formed in the mask by irradiating the mask with laser light to expose a dividing region. Then, the semiconductor wafer is caused to come into contact with water to remove the upper mask covering each of the element regions while leaving the lower layer. After that, the wafer is exposed to plasma to perform etching on the dividing region exposed from the opening until the etching reaches the back surface, thereby dicing the semiconductor wafer into a plurality of element chips. Thereafter, the lower layer mask left on the front surface of the semiconductor chips is removed. 1. A method of manufacturing an element chip , comprising:preparing a substrate that includes a plurality of element regions and a dividing region defining the element regions, the substrate having a first surface and a second surface opposite to the first surface;holding the second surface of the substrate onto a holding sheet;coating the first surface of the substrate with a mask, the mask including a water-insoluble lower layer and a water-soluble upper layer;forming an opening in the mask by irradiating the mask with laser light to expose the dividing region of the substrate from the opening;causing the substrate to come into contact with water or an aqueous solution to remove the upper layer of the mask covering each of the element regions while leaving the lower layer;exposing the substrate to first plasma to perform etching on the dividing region exposed from the opening until the etching reaches the second surface, thereby dicing the substrate into a plurality of element chips, so that the plurality of element chips is held on the holding sheet; andremoving the mask left on a ...

METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT

A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements. 1. A method of manufacturing a light emitting element , the method comprising: a sapphire substrate having a first face and a second face, and', 'a semiconductor structure disposed on the second face;, 'providing a wafer comprisingirradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; andsubsequently, separating the wafer into a plurality of light emitting elements, performing a first irradiation step comprising irradiating the laser beam along a plurality of first lines that extend in a first direction that is parallel to the first face and that are aligned in a second direction that is parallel to the first face and intersects the first direction, and', 'subsequent to performing the first irradiation step, performing a second irradiation step comprising irradiating the laser beam along second lines that extend in the second direction,, 'wherein said irradiating the substrate with a laser beam compriseswherein said irradiating in the first irradiation step is performed at a plurality of positions along the first direction using a first irradiation pitch of 2.5 μm or less for the positions along the first direction, andwherein said irradiating in the second irradiation step is performed at a plurality of positions along the second direction using a second irradiation pitch for the positions along the second direction, the second irradiation pitch being larger than the first irradiation pitch.2. The method of manufacturing a light emitting element according to claim 1 , wherein:the first direction extends along an m-axis of the ...

Process for producing semiconductor devices and dicing lanes

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT

In a method for manufacturing a light-emitting element, a second irradiation process includes forming a first modified region at a first distance from a second surface in a thickness direction of a sapphire substrate, forming a second modified region at a second distance from the second surface in the thickness direction, the second distance being less than the first distance, the second modified region being shifted in a first direction from the first modified region, and forming a third modified region at a third distance from the second surface in the thickness direction, the third distance being less than the second distance, the third modified region overlapping the first modified region in a top-view. In the thickness direction of the sapphire substrate, a greater number of modified regions that include second modified portions are formed than modified regions that include first modified portions. 1. A method for manufacturing a light-emitting element , the method comprising:{'claim-text': ['a sapphire substrate having a first surface and a second surface opposite the first surface, and', 'an element part that comprises a semiconductor layer located at the first surface;'], '#text': 'providing a wafer comprising:'}{'claim-text': ['a first irradiation process of scanning the laser beam along a first direction parallel to an a-axis direction of the sapphire substrate to form a plurality of first modified portions along the first direction in the interior of the sapphire substrate, the formation of the plurality of first modified portions being performed multiple times to form a plurality of modified regions at a first spacing at different distances from the second surface, each of the plurality of modified regions formed at the first spacing comprising the plurality of first modified portions along the first direction, and', 'a second irradiation process of scanning the laser beam along a second direction parallel to an m-axis direction of the sapphire substrate ...

Methods for adjusting beam properties for laser processing coated substrates

A method of laser processing a coated substrate having a coating later disposed on a transparent workpiece that includes determining an optical characteristic of the coating layer and selecting a beam path for a pulsed laser beam based on the optical characteristic. The beam path is selected a polarization-adjusting beam path and a frequency-adjusting beam path. The method also includes directing the pulsed laser beam down the selected beam path to form a modified pulsed laser beam and directing the modified pulsed laser beam into the transparent workpiece, where the modified pulsed laser beam forms a laser beam focal line that induces absorption in the transparent workpiece to produce a defect in the transparent workpiece. The laser beam focal line includes a wavelength λ, a spot size wo, and a Rayleigh range ZR that is greater thanFD⁢π⁢⁢wo2λ,where FD is a dimensionless divergence factor.

METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT

A method of manufacturing a light emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements. Irradiating the substrate with a laser beam includes: performing a first irradiation step comprising irradiating the laser beam along a plurality of first lines that extend in a first direction that is parallel to the first face and that are aligned in a second direction that is parallel to the first face and intersects the first direction, and subsequent to performing the first irradiation step, performing a second irradiation step comprising irradiating the laser beam along second lines that extend in the second direction. 1. A method of manufacturing a light emitting element , the method comprising: a substrate having a first face and a second face, and', 'a semiconductor structure disposed on the second face;, 'providing a wafer comprisingirradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; andsubsequently, separating the wafer into a plurality of light emitting elements, performing a first irradiation step comprising irradiating the laser beam along a plurality of first lines that extend in a first direction that is parallel to the first face and that are aligned in a second direction that is parallel to the first face and intersects the first direction, and', 'subsequent to performing the first irradiation step, performing a second irradiation step comprising irradiating the laser beam along second lines that extend in the second direction,, 'wherein said irradiating the substrate with a laser beam compriseswherein said irradiating in the first irradiation step is performed at a plurality of positions along the first direction using a first irradiation pitch of 2.5 μm or less for the positions ...

Method for Separating Chips from a Wafer

The invention relates to a method for producing chips () by dividing a wafer along dividing lines () defining dimensions of the chip, wherein a focus () of a preferably pulsed laser radiation () is moved along the dividing lines on a first and at least a second path () within the wafer body, wherein the laser radiation is applied to the wafer from a rear side () of the wafer, and the power density for producing the defects () on the first path () is lower than the power density for producing the defects () on the second path (), and/or the number of defects on the first path is smaller than the number of defects on the second path. 1. A method for separating chips from a wafer , said method comprising:dividing the wafer along dividing lines defining dimensions of the chip;moving a focus of a pulsed laser radiation along the dividing lines on a first and at least a second path within the wafer body, wherein the first path runs between a functional layer arranged on a front side of the wafer and the second path in such a manner that polycrystalline defects for producing internal stresses in the silicon body are formed on the paths as a result of a partial melting of the monocrystalline silicon body, wherein the laser radiation is applied to the wafer from a rear side of the wafer, and a power density for producing a number of the defects on the first path is lower than a power density for producing a number of the defects on the second path, and/or the number of defects on the first path is smaller than the number of defects on the second path, such that a falling stress gradient is formed between internal stresses induced along the second path and the first path by the defects, and the first path forms a barrier against crack propagation beyond the first path in the direction of the functional layer of the wafer; andsubjecting the wafer to a mechanical load so as to separate the chips from the wafer by way of a material fracture in dividing planes defined by the ...

METHOD AND APPARATUS FOR ADDITIVE MANUFACTURING WITH MODIFIED POWDER

A process for additive manufacturing of a metal alloy material is provided that includes: a) providing a feedstock powder comprising base powder particles with nanoparticles attached to surfaces of the base powder particles; b) providing an additive manufacturing system with a laser power source relatively movable at a scan speed; c) wherein the additive manufacturing system has a process window for the feedstock powder; and d) exposing the feedstock powder to a predetermined power input from the laser power source at a predetermined scan speed to produce the metal alloy material. The concentration by volume of nanoparticles within the feedstock powder is such that independent first and second microstructures may be produced within the metal alloy material. 1. A process for additive manufacturing of a metal alloy material , said process comprising:providing a feedstock powder comprising base powder particles with nanoparticles attached to surfaces of the base powder particles, the feedstock powder having a concentration by volume of nanoparticles;providing an additive manufacturing system with a laser power source relatively movable at a scan speed;wherein the additive manufacturing system has a process window for the feedstock powder, the process window defined by a maximum power input from a laser power source and a maximum scan speed; andexposing the feedstock powder to a predetermined power input from the laser power source at a predetermined scan speed to produce the metal alloy material;wherein the concentration by volume of nanoparticles within the feedstock powder is such that the exposing of the feedstock powder to a first said predetermined power input from the laser power source at a first said predetermined scan speed gives the metal alloy material a first microstructure, and exposing the feedstock powder to a second said predetermined power input from the laser power source at a second said predetermined scan speed gives the metal alloy material a ...

Components made of glass or glass ceramic having predamage along predetermined dividing lines

A component of glass or glass ceramic having predamages arranged along at least one predetermined dividing line is provided. The dividing line has a row of predamages lying one behind the other. The predamages pass continuously through the glass or the glass ceramic with at least 90% of the predamages being cylindrically symmetrical. The glass or the glass ceramic has a material compaction of at least 1% relative to an actual material density in a radius of 3 μm about a longitudinal axis of respective pre-damaged points. The relative weight loss per pre-damaged point is less than 10% and the component has a thickness of at least 3.5 mm. 1. A component comprising:glass or glass ceramic having a plurality of predamages, each predamage in the plurality of predamages lying one behind the other along a dividing line, and each predamage passing continuously through the glass or the glass ceramic,wherein at least 90% of the plurality of predamages are cylindrically symmetrical,wherein the glass or the glass ceramic has a material compaction of at least 1% relative to an actual material density in a radius of 3 μm about a longitudinal axis of each predamage,wherein the glass or the glass ceramic has a relative weight loss per predamage that is less than 10%, andwherein the glass or the glass ceramic has a thickness of at least 3.5 mm.2. The component of claim 1 , wherein each predamage has a sectional plane at a surface of the glass or glass ceramic that is circular.3. The component of claim 2 , wherein the plurality of predamages have a radii that are substantially the same.4. The component of claim 2 , further comprising a ratio of an absolute vale of a difference between a diameter of the predamage at the surface to twice a diameter of the predamage at an opposite surface to the thickness that is <0.001.5. The component of claim 1 , further comprising a plurality of layers claim 1 , wherein the plurality of layers consists of the glass or glass ceramic or of different ...

METHOD FOR TREATING AN INTERNAL DEFECT IN A PART

A method for treating an internal defect in a part made of a material, involves: a) detecting and locating the internal defect in the part; b) defining, inside the part, at least one target volume which at least partially includes the defect; c) for each target volume, simultaneously irradiating the target volume by at least two beams which converge in the target volume and are continuous, whereby a treated area is obtained. The energy applied to the target volume by each beam is less than a threshold energy for sintering the material, and the sum of the energies applied to the target volume by each of the beams is greater than or equal to a transformation threshold energy that corresponds to the threshold energy for sintering or melting the material; the material of the part is partially transparent to said beams. 112-. (canceled)13. A method for treating an internal defect in a part made of a material , the method comprising the steps of:a) detecting and locating the internal defect in the part;b) defining, inside the part, at least one target volume which at least partially includes the defect;c) for each target volume, simultaneously irradiating the target volume by at least two beams which converge in the target volume and are continuous, whereby a treated area is obtained;wherein an energy applied to the target volume by each beam is less than a threshold energy for sintering the material, and a sum of the energies applied to the target volume by each one of the beams is greater than or equal to a transformation threshold energy, the transformation threshold energy corresponding to a threshold energy for sintering the material, when it is desired to obtain a selective sintering of the material in the target volume, or to a threshold energy for melting the material, when it is desired to obtain a selective melting of the material in the target volume,and wherein the material of the part is partially transparent to said at least two beams.14. The method ...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND WAFER-ATTACHED STRUCTURE

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step. 129-. (canceled)30. A method for manufacturing a semiconductor device comprising:a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface;a mounting step that a back face-side supporting member which is formed a disk-shaped substrate having a larger size than the semiconductor wafer source is fitted on the second main surface of the semiconductor wafer source for making a wafer-attached structure;an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source of the wafer-attached structure, and forming a semiconductor element at each of the plurality of element forming regions; anda wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.31. The method ...

COMBINED PRODUCTION MEHTOD FOR SEPARATING A NUMBER OF THIN LAYERS OF SOLID MATERIAL FROM A THICK SOLID BODY

Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane () along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane () along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body. 1providing a solid body to be split into a number of layers of solid material, the solid body having a first level surface portion and a second level surface portion;introducing or generating defects in the solid body using laser beams in order to determine a first detachment plane along which a first layer of solid material is separated from the solid body, the laser beams penetrating into the solid body via the second level surface portion;providing a receiving layer for holding the layer of solid material on the second level surface portion of the solid body, the receiving layer being in the form of a polymer layer;applying heat to the receiving layer in order to mechanically generate stresses in the solid body, the application of heat ...

WAFER PROCESSING METHOD

A wafer processing method is provided. The wafer processing method includes a first laser processing step of forming a first modified layer inside the wafer by applying a laser beam at a wavelength which transmits the wafer along first projected division lines, a second laser processing step of forming a second modified layer inside the wafer excluding non-processed regions in intersecting regions where the first and second projected division lines intersect each other by applying a laser beam at a wavelength which transmits the wafer along the second projected division lines, and a grinding step of grinding a reverse side of the wafer to thin the wafer to a predetermined thickness and at the same time dividing the wafer into a plurality of chips starting from the first and second modified layers. In the second laser processing step, no second modified layers are formed in the non-processed regions. 1. A wafer processing method of processing a wafer with a device disposed in each of areas of a face side demarcated by a plurality of first projected division lines that extend in a first direction and a plurality of second projected division lines that extend in a second direction intersecting the first direction , the wafer processing method comprising:a first laser processing step of forming a first modified layer inside the wafer by applying a laser beam at a wavelength which transmits the wafer along the first projected division lines;a second laser processing step of forming a second modified layer inside the wafer excluding non-processed regions in intersecting regions where the first and second projected division lines intersect each other by applying a laser beam at a wavelength which transmits the wafer along the second projected division lines; anda grinding step of grinding a reverse side of the wafer to thin the wafer to a predetermined thickness and at the same time dividing the wafer into a plurality of chips starting from the first and second modified ...

PROCESSING APPARATUS AND PROCESSING METHOD

In forming modification layers by radiating laser light to an inside of a processing target object from a modifying device periodically while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and by moving the modifying device relative to the holder in a diametrical direction by a moving mechanism, a boundary position of the laser light in the diametrical direction is calculated, the boundary position being a position where a circumferential distance between the modification layers becomes a required threshold value, and a diametrical distance between the modification layers is reduced in a moving direction of the modifying device from the boundary position and/or a frequency of the laser light is reduced. 1. A processing apparatus configured to process a processing target object , comprising:a holder configured to hold the processing target object;a modifying device configured to radiate laser light to an inside of the processing target object held by the holder to form modification layers along a plane direction thereof;a rotating mechanism configured to rotate the holder and the modifying device relatively;a moving mechanism configured to move the holder and the modifying device relatively in a horizontal direction; anda controller configured to control the holder, the modifying device, the rotating mechanism and the moving mechanism,wherein, in forming the modification layers by radiating the laser light to the inside of the processing target object from the modifying device periodically while rotating the processing target object held by the holder relative to the modifying device by the rotating mechanism and by moving the modifying device relative to the holder in a diametrical direction by the moving mechanism,the controller calculates a boundary position of the laser light in the diametrical direction, the boundary position being a position where a circumferential distance between the ...

GLASS-BASED SUBSTRATE WITH VIAS AND PROCESS OF FORMING THE SAME

A glass sensor substrate including metallizable through vias and related process is provided. The glass substrate has a first major surface, a second major surface and an average thickness of greater than 0.3 mm. A plurality of etch paths are created through the glass substrate by directing a laser at the substrate in a predetermined pattern. A plurality of through vias through the glass substrate are etched along the etch paths using a hydroxide based etching material. The hydroxide based etching material highly preferentially etches the substrate along the etch path. Each of the plurality of through vias is long compared to their diameter for example such that a ratio of the thickness of the glass substrate to a maximum diameter of each of the through vias is greater than 8 to 1. 1. A process for forming vias in a glass-based substrate having a first major surface and an opposing second major surface , the process comprising:creating a plurality of etch paths extending from the first major surface of the glass substrate by directing a laser at the substrate in a predetermined pattern; andetching a plurality of vias extending from the first major surface of the glass substrate along the etch paths using a hydroxide based etching material, wherein the hydroxide based etching material preferentially etches the substrate along the etch path such that an etch rate of the etching material along the etch path is at least 12 times greater than an etch rate of the etching material outside of the etch paths.2. The process of claim 1 , wherein each of the plurality of vias have a ratio of the length of the via to a maximum diameter of the via is greater than 8 to 1.3. The process of claim 1 , wherein at least one of the plurality of vias is a through via.4. The process of claim 1 , wherein at least one of the plurality of vias is a blind via.5. The process of claim 1 , wherein the laser is a picosecond laser.6. The process of claim 1 , wherein the maximum diameter of each of ...

PLASTIC COMPONENT AND METHOD FOR GENERATING A SURFACE STRUCTURE ON A PLASTIC COMPONENT

A plastic component is provided that leads to an initial friction reduction with a friction partner. At least part of the surface of the plastic component, which interacts with a surface of a friction partner, is provided with a plurality of structures. The structures are composed of at least one structure type. Between two adjacent structure types, a distance is formed in the range of 10 microns to 1 mm. A width of the structure types is in the range of 10 microns to 100 microns. A height or depth of the structure types is in the range from 1 micron to 100 microns. 1. A thermoplastic plastic component comprising a surface structure to reduce friction , wherein , after an injection molding process , at least a portion of a surface of the plastic component has a plurality of structure types arranged in a straight line , wherein a distance between two adjacent straight lines of the structure types is in a range of 10 microns to 1 mm , wherein a width of the structure types arranged in the straight line is in a range of 10 microns to 1 mm , and wherein a height or depth of the structure types arranged in the straight line is in the range of 1 micron to 100 microns.210. The thermoplastic plastic component according to claim 1 , wherein the distance claim 1 , the width or the height of the structure types arranged in the straight line claim 1 , or the distance claim 1 , the width or the depth of the structure types arranged in the straight line are constant within the surface of the plastic component ().3. The thermoplastic plastic component according to claim 1 , wherein the distance claim 1 , the width or the height of the structure types arranged in the straight line claim 1 , or the distance claim 1 , the width or the depth of the structure types arranged in the straight line vary within the surface of the plastic component.4. The thermoplastic plastic component according to claim 1 , wherein the structure types on the surface of the plastic component are raised or ...

Process For Nanostructuring The Surface Of A Material By Laser Context And Technological Background

The invention relates to a process for nanostructuring the surface of a solid material in order to form a regular pattern of nanostructures on said surface, comprising: 1. Process for nanostructuring a surface of a solid material in order to form a regular pattern of nanostructures on said surface , said process comprising:supplying the solid material, said material comprising the surface; each pulse train comprises at least two pulses,', 'each pulse has a peak fluence, and a sum of the peak fluences of the pulses of a pulse train is between 10% and 70% of a threshold fluence corresponding to a material ablation threshold for one pulse for said material,', 'two consecutive pulses of a pulse train are temporally separated by a peak-to-peak duration ΔT between 500 fs and 150 ps,', 'two consecutive pulse trains are temporally separated by a duration greater than 10 ΔT,', 'obtaining of a regular pattern of nanostructures on said portion of the surface, having a spatial periodicity lower than 130 nm,', 'displacing the femtosecond laser beam on the surface in such a way as to irradiate other portions of said surface., 'irradiating a portion of the surface by a femtosecond laser beam, comprising a plurality of pulse trains, wherein2. Process according to claim 1 , wherein each pulse has a peak fluence between 5% and 65% of a threshold fluence corresponding to a material ablation threshold for one pulse for said material.3. Process according to claim 1 , wherein the irradiating by the plurality of pulse trains on a same surface portion represents a total dose less than 6 J/cm.4. Process according to claim 1 , wherein each portion of the surface is irradiated by at least 5 pulse trains.5. Process according to claim 1 , wherein each portion of the surface is irradiated by a number of pulse trains less than 500.6. Process according to claim 1 , wherein each pulse of a pulse train has a duration less than the duration ΔT between two consecutive pulses of the pulse train.7. ...

Rotating light source utilized to modify substrates

A system comprising a beam source ( 110 ) and an optical system ( 304 ) comprising first and second portions. The system further comprises first and second torque motors integrated into respective ones of the first and second portions, The first torque motor ( 420 ) is configured to rotate first portion ( 416 ) around a first axis ( 434 ). The second torque motor ( 426 ) is configured to rotate second portion ( 418 ) around a second axis ( 436 ). The first axis is perpendicular to the second axis.

SUBSTRATE MANUFACTURING METHOD

A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. Performed is a first step of disposing a laser condensing means on a surface of a magnesium oxide single crystal substrate () of magnesium oxide to be irradiated in a non-contact manner, the laser condensing means being for condensing a laser beam. Then, a second step of causing planar peeling from a surface side of the magnesium oxide single crystal substrate () to be irradiated is performed. In this second step, a laser beam (B) is irradiated to the surface of the single crystal substrate () and the laser beam (B) is condensed into an inner portion of the single crystal substrate () under designated irradiation conditions. Simultaneously with the irradiation and the condensation, the laser condensing means () and the single crystal substrate () are two-dimensionally moved relatively to each other. In this way, processing mark lines (LK), each of which is composed in such a manner that processing marks (K) formed by thermal processing are formed in line at an inner portion of a single crystal member, are formed in parallel to one another. At this time, overlapped line portions (DK) in which the processing marks (K) overlap one another are formed in at least a part of the processing mark lines (LK), whereby the planar peeling is caused from the irradiated surface () side. 1. A substrate manufacturing method comprising:a first step of disposing a laser condensing means on a surface of a single crystal member of magnesium oxide to be irradiated in a non-contact manner, the laser condensing means being tier condensing a laser beam; anda second step of irradiating the laser beam to a surface of the single crystal member and condensing the laser beam into an inner portion of the single crystal member under a designated irradiation condition using the laser condensing means, simultaneously moving the laser condensing means and the single crystal member ...

METHOD AND APPARATUS FOR PRECISION WORKING OF MATERIAL

A method for precise working of material, particularly organic tissue, comprises the step of providing laser pulses with a pulse length between 50 fs and 1 ps and with a pulse frequency from 50 kHz to 1 MHz and with a wavelength between 600 and 2000 nm for acting on the material to be worked. Apparatus, in accordance with the invention, for precise working of material, particularly organic tissue comprising a pulsed laser, wherein the laser has a pulse length between 50 fs and 1 ps and with a pulse frequency of from 50 kHz to 1 MHz is also described. 1 a pulse length between 50 fs and 1 ps; and', 'a pulse frequency of 50 kHz to 1 MHz., 'a pulsed laser, wherein the laser has. An apparatus for precise working of organic tissue comprising: The present application is a continuation of U.S. patent application Ser. No. 15/131,518 filed Apr. 18, 2016, which is a continuation of U.S. patent application Ser. No. 13/456,611 filed Apr. 26, 2012, now U.S. Pat. No. 9,320,650, which is a continuation of U.S. patent application Ser. No. 12/012,405 filed Feb. 1, 2008, now U.S. Pat. No. 8,171,937, which is a continuation of U.S. patent application Ser. No. 10/625,157 filed Jul. 23, 2003, now U.S. Pat. No. 7,351,241, which claims the priority of U.S. Provisional Application No. 60/475,583, filed Jun. 2, 2003, the disclosures of which are hereby incorporated by reference in their entirety.The invention is directed to a femtosecond laser system for precise working of material and tissue, particularly a laser device for the precise, micrometer-exact working of organic material, preferably an eye.In a valuable contribution to the art, German Patent DE 197 46 483 by the present Applicant describes how macroscopic amounts of material are ablated, vaporized or melted (COlaser, Nd:YAG, excimer . . . ) with micrometric precision when working over large surface areas of materials by means of lasers with large spot diameters.In another valuable contribution to the art, German Patent DE 197 27 ...

Laser machining device and laser machining method

The controllability of modified spots is improved. A laser processing apparatus 100 comprises a first laser light source 101 for emitting a first pulsed laser light L 1 , a second laser light source 102 for emitting a second pulsed laser light L 2 , half-wave plates 104, 105 for respectively changing directions of polarization of the pulsed laser light L 1 , L 2 , polarization beam splitters 106, 107 for respectively polarization-separating the pulsed laser light L 1 , L 2 having changed the directions of polarization, and a condenser lens 112 for converging the polarization-separated pulsed laser light L 1 , L 2 at an object to be processed 1 . When the directions of polarization of the pulsed laser light L 1 , L 2 changed by the half-wave plates 104, 105 are varied by a light intensity controller 121 in the laser processing apparatus 100 , the ratios of the pulsed laser light L 1 , L 2 polarization-separated by the polarization beam splitters 106, 107 are altered, whereby the respective intensities of the pulsed laser light L 1 , L 2 are adjusted.

LASER MACHINING DEVICE AND LASER MACHINING METHOD

A laser processing device includes: a laser light source; a converging optical system; and a reflective spatial light modulator modulating the laser light such that the laser light is caused to branch into at least first processing light and second processing light, and the first processing light is converged at a first converging point and the second processing light is converged at a second converging point. In a case in which W is a radius of the first processing light at a front face of the object, W is a radius of the second processing light at the front face, and D is a distance between the first converging point and the second converging point when viewed from a direction orthogonal to the front face, the reflective spatial light modulator modulates the laser light such that D>W+W is satisfied. 1. A laser processing device for converging laser light at an object to be processed so as to form a modified region within the object along a line to cut , the laser processing device comprising:a laser light source emitting the laser light;a converging optical system converging the laser light emitted from the laser light source at the object; anda spatial light modulator modulating the laser light emitted from the laser light source such that the laser light is caused to branch into at least first processing light and second processing light, and the first processing light is converged at a first converging point and the second processing light is converged at a second converging point by the converging optical system, whereinthe first converging point and the second converging point have a positional relationship in which the first converging point is positioned at a first surface side as an opposite side to the laser light entrance side of the object with respect to the second converging point, and the first converging point is positioned at an anterior side in a relative moving direction of the laser light along the line with respect to the second converging ...

Glowing Part And Tooling In Simultaneous Laser Plastics Welding

Sensors incorporated within a laser bank detect light emitted by light sources that is directed into and travels through a delivery end of an associated laser delivery optical fiber. The light sources may be positioned between downstream of the delivery end of the associated laser delivery optical fiber and a lower tooling. In some embodiments, the light source is incorporated within a waveguide. In other embodiments, the light source is positioned within a dummy part. 1. A method for sensing the output of light travelling through a laser delivery optical fiber , the method comprising:directing light emitted by a light source positioned downstream of a delivery end of the laser delivery optical fiber through said delivery end of said laser delivery optical fiber used in a simultaneous laser welding system comprised of a laser source that directs a laser from a laser bank from the input ends through to the delivery ends of a plurality of laser delivery bundles, wherein each laser delivery bundle is comprised of at least a laser delivery optical fiber for welding a plurality of work pieces; andsensing the light after said light is directed from and has traveled through said delivery end to an input end of the associated laser delivery optical fiber with a sensor.2. The method according to claim 1 , wherein the directing the light is conducted by positioning the light source between the delivery end of the associated laser delivery optical end and the plurality of work pieces.3. The method according to claim 2 , further comprising covering the sensor with a chromatic bandpass filter.4. The method according to claim 2 , wherein emitting light via the light source occurs at a separate time interval from a weld cycle.5. The method according to claim 1 , wherein the directing the light is conducted by positioning the light source within a dummy part claim 1 , wherein the dummy part is positioned where the plurality of work pieces typically reside during a weld cycle.6. The ...

Method And Device For Cutting Sapphire

A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first COlaser beam the coating via a COfocusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second COlaser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second COlaser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels. 1. A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body , the method comprising:focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed;focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; and scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.2. The method of claim 1 , wherein prior to focusing the first CO2 laser beam on ...

METHOD FOR SEPARATING SUBSTRATES

A method for separating a substrate of a brittle-hard material is provided. The method includes the steps of introducing defects into the substrate at a spacing from one another along a separation line using at least one pulsed laser beam; selecting an average spacing between neighboring defects and a number of laser pulses for generating a respective defect such that a breaking stress (σ) for separating the substrate along the separation line is smaller than a first reference stress (σ) of the substrate and such that an edge strength σof the separation edge obtained after separation is greater than a second reference stress (σ) of the substrate; and separating the substrate after introducing the defects by applying a stress along the separation line. 1. A method for separating a substrate made of brittle-hard material , comprising:introducing defects into the substrate at a spacing from one another along a separation line using at least one pulsed laser beam;{'sub': B', 'R1', 'K', 'R2, 'selecting an average spacing between neighboring defects and a number of laser pulses for generating a respective defect such that a breaking stress (σ) for separating the substrate along the separation line is smaller than a first reference stress (σ) of the substrate and such that an edge strength σof the separation edge obtained after separation is greater than a second reference stress (σ) of the substrate; and'}separating the substrate after introducing the defects by applying a stress along the separation line.2. The method of claim 1 , setting the first reference stress (σ) and the second reference stress (σ) identical to one another and to a maximum thermal stress (σ) that depends on a material of the substrate.3. The method of claim 2 , further comprising determining the maximum thermal stress (σ) according to a formula σ=0.5·α·E·(T−100° C.) claim 2 , wherein α is the coefficient of thermal expansion of the material of the substrate claim 2 , E is the Young's modulus of the ...

LASER LIGHT RADIATION DEVICE AND LASER LIGHT RADIATION METHOD

A laser light irradiation device includes: a laser light source; a spatial light modulator including a display unit configured to display a phase pattern; an objective lens configured to condense a laser light emitted from the spatial light modulator at the object; an image-transfer optical system configured to transfer an image of the laser light on the display unit to an entrance pupil plane of the objective lens; a reflected light detector configured to detect reflected light of the laser light which is incident in the object and reflected by an opposite surface opposite to a laser light entrance surface; and a controller configured to control the phase pattern. When the reflected light detector detects the reflected light, the controller displays a reflected light aberration correction pattern which is the phase pattern correcting aberration generated in the event of the laser light being transmitted through the object having twice the predetermined thickness. 1: A laser light irradiation device for irradiating an object having a predetermined thickness with laser light , the laser light irradiation device comprising:a laser light source configured to generate the laser light;a spatial light modulator comprising a display unit configured to display a phase pattern, the spatial light modulator configured to cause the laser light generated by the laser light source to enter the display unit, modulate the laser light according to the phase pattern, and emit the laser light from the display unit;an objective lens configured to condense the laser light emitted from the spatial light modulator at the object;an image-transfer optical system configured to transfer an image of the laser light on the display unit of the spatial light modulator to an entrance pupil plane of the objective lens;a reflected light detector configured to detect reflected light of the laser light which is incident in the object and reflected by an opposite surface opposite to a laser light ...

METHODS FOR LASER PROCESSING TRANSPARENT MATERIAL USING PULSED LASER BEAM FOCAL LINES

A method for processing a transparent workpiece includes forming a first contour line, comprising a first plurality of defects, in the transparent workpiece; forming a second contour line, comprising a second plurality of defects, in the transparent workpiece, wherein the second contour line defines a second contour intersecting the first contour line at an intersection point, wherein the laser pulse energy of the second pulsed laser beam is increased from a first laser pulse energy to a second laser pulse energy at a first distance from the intersection point; and wherein the laser pulse energy of the second pulsed laser beam is decreasing from the second laser pulse energy to the first laser pulse energy at a second distance from the intersection point. 1. A method for processing a transparent workpiece , the method comprising: directing a first pulsed laser beam oriented along a beam pathway and output by a beam source through an aspheric optical element and into the transparent workpiece such that a portion of the first pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece, the induced absorption creating a defect within the transparent workpiece; and', 'translating the transparent workpiece and the first pulsed laser beam relative to each other along the first contour line, thereby laser forming the first plurality of defects along the first contour line within the transparent workpiece;, 'forming a first contour line in the transparent workpiece, the first contour line comprising a first plurality of defects in the transparent workpiece such that the first contour line defines a first contour, wherein forming the first contour line comprises directing a second pulsed laser beam oriented along a beam pathway and output by a beam source through an aspheric optical element and into the transparent workpiece such that a portion of the second pulsed laser beam directed into the transparent ...

GLASS PLATE PROCESSING METHOD AND GLASS PLATE

A glass plate processing method for dividing a glass plate by a separation line that divides a main surface of the glass plate into two regions, includes: moving an irradiation point of a first laser beam along the separation line, and forming a crack extending from the separation line diagonally with respect to the main surface, in a cross-section orthogonal to the separation line; after the crack is formed, moving an irradiation point of a second laser beam along the separation line, and forming a modified portion, in the cross-section, on a virtual line extending in a direction perpendicular to the main surface, from a tip of the crack towards a center of a thickness of the glass plate; and after the modified portion is formed, applying stress to the glass plate and forming a new crack spanning from the tip of the crack to the modified portion. 1. A glass plate processing method for dividing a glass plate by a separation line that divides a main surface of the glass plate into two regions , the method comprising:moving an irradiation point of a first laser beam along the separation line;forming a crack that extends from the separation line diagonally with respect to the main surface, in a cross-section that is orthogonal to the separation line;after the crack is formed, moving an irradiation point of a second laser beam along the separation line;forming a modified portion in the cross-section, on a virtual line that extends in a direction perpendicular to the main surface, from a tip of the crack towards a center of a thickness of the glass plate; andafter the modified portion is formed, applying stress to the glass plate and forming a new crack that spans from the tip of the crack to the modified portion.2. The processing method according to claim 1 , wherein the separation line includes a curved portion in plan view.3. The processing method according to claim 2 , wherein a radius of curvature of the curved portion is 0.5 mm or greater and 1000 mm or less.4. The ...

Splitting of a solid using conversion of material

A method for creating a detachment zone in a solid is contemplated, such as in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. The method may comprise at least the steps of: providing a solid which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid inside the solid in a defined manner such that a detachment zone or a plurality of partial detachment zones is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid is so high that the material forming the predefined portion is subject to modifications in the form of a predetermined conversion of material.

METHOD AND DEVICE FOR SEPARATION OF GLASS PORTIONS OR GLASS CERAMIC PORTIONS

A method is provided that includes producing filamentary damages in a volume of a glass or glass ceramic element adjacently aligned along a separation line and extend obliquely relative to a surface of the glass or glass ceramic element; and separating a portion from the glass or glass ceramic element along the separation line. The step of producing the filamentary damages includes directing laser pulses of an ultrashort pulse laser obliquely on the surface so that the laser pulses have a light propagation direction that extends obliquely relative to the surface and so that the filamentary damages resulting from the laser pulses have the longitudinal extension that extends obliquely relative to the surface; generating a plasma within the volume with the laser pulses; and displacing the laser pulses at points of incidence over the surface along the separation line. 1. A method for separating portions from a glass or glass ceramic element , comprising:producing filamentary damages in a volume of the glass or glass ceramic element, the filamentary damages being adjacently aligned along a separation line and having a longitudinal extension that extends obliquely relative to a surface of the glass or glass ceramic element; andseparating a portion from the glass or glass ceramic element along the separation line, directing laser pulses of an ultrashort pulse laser obliquely on the surface so that the laser pulses have a light propagation direction that extends obliquely relative to the surface and so that the filamentary damages resulting from the laser pulses have the longitudinal extension that extends obliquely relative to the surface,', 'generating a plasma within the volume with the laser pulses, wherein the glass or glass ceramic element comprising a material that is transparent to the laser pulses, and', 'displacing the laser pulses at points of incidence over the surface along the separation line, wherein the separation line extends obliquely to a light incidence ...

SiC SUBSTRATE SEPARATING METHOD

Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point. 1. An SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner , said SiC substrate having a first surface and a second surface opposite to said first surface , said SiC substrate separating method comprising:an adhesive tape attaching step of attaching a transparent adhesive tape to said first surface of said SiC substrate;a support member attaching step of attaching a support member to said second surface of said SiC substrate;a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to said SiC substrate and said adhesive tape inside said SiC substrate at a predetermined depth from said adhesive tape after performing said adhesive tape attaching step and said support member attaching step, and next applying said laser beam to said adhesive tape as relatively moving said focal point and said SiC substrate to thereby form a modified layer parallel to said first surface of said SiC substrate and cracks propagating from said modified layer, thus forming a separation start point; anda separating step of applying an external force to said SiC substrate ...

LASER PROCESSING OF TRANSPARENT ARTICLE USING MULTIPLE FOCI

Disclosed herein are transparent articles and methods and systems for processing transparent articles. Systems for processing transparent articles, e.g. cutting glass, may include at least one initial laser and at least one polarizing beam splitter, where the polarizing beam splitter is configured to split an initial laser beam into a plurality of laser beams, and wherein the plurality of laser beams are useful for processing transparent articles. Methods for processing transparent articles comprise creating at least one flaw in the transparent articles with a plurality of laser beams. 1. A method comprising:collinearly converging a first laser beam and a second laser beam along a mutual path, a first focus point of the first laser beam and a second focus point of the second laser beam offset from one another along the mutual path;moving the collinearly converged first and second laser beams in a first pass across at least a portion of a transparent article to form a first series of flaws in the transparent article at a first depth from a surface of the transparent article corresponding to the first focus point and a second depth from the surface of the transparent article corresponding to the second focus point;adjusting at least one of the first focus point and the second focus point; andmoving the collinearly converged first and second laser beams in a second pass across the portion of the transparent article to form a second series of flaws in the transparent article at a third depth from the surface of the transparent article corresponding to the first focus point and a fourth depth from the surface of the transparent article corresponding to the second focus point, the first series of flaws interleaved with the second series of flaws.2. The method of claim 1 , further comprising a step of separating the transparent article along the first and second series of flaws.3. The method of claim 1 , wherein the second laser beam passes through at least two lenses ...

METHOD OF LASER SCRIBING OF SEMICONDUCTOR WORKPIECE USING DIVIDED LASER BEAMS

This invention provides an effective and rapid method of laser processing for separating semiconductor devices formed on hard and solid substrates () with a one pass process. The method is based on generating fractures along the scribing trajectory which extend deep into the bulk of a workpiece (), wherein thermal stress is induced by delivering at least two processing (ultra short pulse) pulsed-beams (), containing at least primary and secondary pulses. Primary pulses are used to generate a heat accumulated zone, which allows for more efficient absorption of the secondary pulses, which generate a sufficient heat gradient to produce mechanical failures, necessary for mechanically separating the workpiece () into separate pieces. 1. A semiconductor workpiece laser scribing method , wherein the workpiece comprises at least one substrate layer of a hard and brittle material having a bandgap in the range of 2.5 to 4 eV , wherein the workpiece has a first and second parallel surface , wherein a pulsed beam laser source is used , whereas the workpiece or processing laser beams are relatively translated along an intended scribing trajectory , characterized in that a pulsed laser beam is guided through a beam manipulation assembly , arranged to separate the initial beam from the pulsed beam laser source , wherein the said initial pulsed beam is divided into at least one primary pulsed beam containing primary pulses and one secondary pulsed beam containing secondary pulses , after which the beams are delivered through a beam converging means into the intended scribing area along at least one scribing trajectory in the workpiece , whereas the primary and secondary pulses are delivered into the intended scribing area in pulse packages of 2 to 8 pulses per micrometer , whereas each primary pulse is accompanied by at least one corresponding secondary pulse , which is delayed by a time interval which slightly exceeds said substrate layer material electron-phonon relaxation time , ...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND WAFER-ATTACHED STRUCTURE

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step. 1. A method for manufacturing a semiconductor device comprising:a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface;an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions; anda wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.2. The method for manufacturing the semiconductor device according to claim 1 , further comprising:a wafer source reuse step of reusing the element non-formation wafer as a new semiconductor wafer source after the wafer source separating step, and forming a new semiconductor element on a cut surface of the new semiconductor ...

Method and apparatus for internally marking a substrate having a rough surface

A method for laser processing provides a coating material ( 130 ) applied to a rough surface ( 42 ) of a substrate ( 44 ) to mitigate adverse optical effects that would be caused by roughness of the surface ( 42 ). Laser pulses ( 52 ) of the laser output of suitable parameters can be directed and focused to internally mark the substrate ( 44 ) material without damaging the rough surface ( 42 ) after passing through the coating material ( 130 ).

Production method for fabry-perot interference filter

A method of manufacturing a Fabry-Perot interference filter includes a forming step of forming a first mirror layer having a plurality of first mirror portions, a sacrificial layer having a plurality of portions expected to be removed, and a second mirror layer having a plurality of second mirror portions on a first main surface of a wafer which includes parts corresponding to a plurality of two-dimensionally arranged substrates and is expected to be cut into the plurality of substrates along each of a plurality of lines; a removing step of simultaneously removing the plurality of two-dimensionally arranged portions expected to be removed from the sacrificial layer through etching after the Ruining step; and a cutting step of cutting the wafer into the plurality of substrates along each of the plurality of lines after the removing step.

WAFER PRODUCING METHOD

A wafer having an off angle α is produced from a hexagonal single crystal ingot having an upper surface, a c-plane exposed to the upper surface, and a c-axis perpendicular to the c-plane. The ingot is supported by a wedge member having a wedge angle α equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane. A modified layer is formed by setting the focal point of a laser beam inside the ingot and next applying it to the upper surface, thereby linearly forming a modified layer inside the ingot and cracks extending from the modified layer along the c-plane. The focal point is moved in the second direction to index the focal point by a predetermined amount. 1. A wafer producing method for producing a wafer having an off angle α from a hexagonal single crystal ingot having an upper surface , a c-plane exposed to the upper surface , and a c-axis perpendicular to the c-plane , the wafer producing method comprising:a supporting step of supporting the ingot through a wedge member having a wedge angle α to a support table having a horizontal supporting surface, the wedge angle α being equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane;a first modified layer forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a fixed vertical position and next applying the laser beam to the upper surface as relatively moving the focal point and the ingot in a first direction perpendicular to a second direction where the off angle α is formed, thereby linearly forming a first modified layer inside the ingot and first cracks extending from the first modified layer along the c-plane;a first indexing step of relatively moving the focal point in the second direction to index the focal point by a predetermined amount; andan initial wafer producing step of separating an initial wafer ...

WAFER PRODUCING METHOD

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. A plate-shaped member having a thickness corresponding to the thickness of the wafer is separated from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the ...

WAFER PRODUCING METHOD

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot is disclosed. The wafer producing method includes a separation start point forming step of forming a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer to thereby form a separation start point in the ingot. The separation start point forming step includes a first separation start point forming step of setting the focal point of a laser beam at a first depth which is N times (N is an integer not less than 2) the depth corresponding to the thickness of the wafer from the upper surface of the ingot and next applying the laser beam to the ingot to thereby form a first separation start point composed of a first modified layer and first cracks extending therefrom. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a modified layer forming step of ...

INTERFEROMETRIC LASER PROCESSING

The present disclosure relates to the field of laser induced modification and processing of materials. Modification is achieved by confining laser-material interaction within an array of narrow zones characterizing an optical interference profile. Disclosed is a method of laser induced modification of a material comprising applying at least one laser pulse to the material, the at least one laser pulse being incident on the first interface of the material, wherein the material is selected on the basis that it can support an optical interference pattern such that a thin volume at a site of at least one intensity maxima of the optical interference pattern is characterized by a laser intensity above a threshold value to responsively produce the laser induced modification of the material at a location relative to the first interface. 1. A method of laser induced modification of a material , comprising: 'the material having a first interface,', 'applying at least one laser pulse to the material,'} wherein the at least one laser pulse has an angle of incidence, and', 'wherein the material is selected on the basis that it can support an optical interference pattern such that a thin volume at a site of at least one intensity maxima of the optical interference pattern is characterized by a laser intensity above a threshold value to responsively produce the laser induced modification of the material at a location relative to the first interface., 'the at least one laser pulse being incident on the first interface,'}2. The method according to claim 1 , wherein the at least one laser pulse's duration is shorter than a thermal diffusion time over a distance equal to one-half of a fringe-to-fringe separation of the optical interference pattern.3. The method according to claim 2 , wherein said thermal diffusion time is characterized by a time representing an acceptable level of thermal diffusion from the site of the at least one intensity maxima.4. The method according to claim 3 , ...

WAFER PRODUCING METHOD

A wafer producing method produces a hexagonal single crystal wafer from a hexagonal single crystal ingot. The method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. The separation start point forming step includes an indexing step of relatively moving the focal point in a direction of formation of an off angle to thereby index the focal point by a predetermined index amount. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a ...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device includes the steps of: preparing a semiconductor substrate including a first semiconductor layer and a second semiconductor layer; and irradiating the semiconductor substrate with laser light from the first semiconductor layer side to divide the semiconductor substrate into individual semiconductor chips. The first semiconductor layer includes a semiconductor material transparent to the laser light. The second semiconductor layer includes a semiconductor material opaque to the laser light. In the step of irradiating with the laser light, laser light having intensity that makes the semiconductor material of the first semiconductor layer opaque to the laser light is irradiated. 1. A method for manufacturing a semiconductor device comprising the steps of:preparing a semiconductor substrate including a first semiconductor layer and a second semiconductor layer; andirradiating the semiconductor substrate with laser light from the first semiconductor layer side to divide the semiconductor substrate into individual semiconductor chips,wherein the first semiconductor layer comprises a semiconductor material transparent to the laser light,the second semiconductor layer comprises a semiconductor material opaque to the laser light, andin the step of irradiating with the laser light, laser light having intensity that makes the semiconductor material of the first semiconductor layer opaque to the laser light by multiphoton absorption is irradiated, so that the first semiconductor layer is vaporized, while the laser light is irradiated to the second semiconductor layer, so that the second semiconductor layer is vaporized.2. The method for manufacturing the semiconductor device according to claim 1 , wherein in the step of irradiating with the laser light claim 1 , an elliptical beam is irradiated.3. The method for manufacturing the semiconductor device according to claim 1 , wherein the first semiconductor layer of the ...

INTERFACE BLOCK; SYSTEM FOR AND METHOD OF CUTTING A SUBSTRATE BEING TRANSPARENT WITHIN A RANGE OF WAVELENGTHS USING SUCH INTERFACE BLOCK

The present application describes a system for cutting a substrate () that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum and will include an edge when extracted from a sheet of substrate (). The system generally includes a laser () capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate () is transparent; an optical device () positioned in the light path of the laser; and an interface block () composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate () is also transparent, wherein said interface block () is positioned in said light path and between the substrate () and said optical element (). 1. A system for cutting a substrate that is transparent within a predetermined range of wavelengths in the electromagnetic spectrum , said substrate will include at least one edge when extracted from a sheet , the system comprising:a. a laser capable of emitting light along a light path and of a predetermined wavelength that is within the range of wavelengths in which the substrate is transparent;b. an optical element positioned in said light path of said laser; andc. an interface block composed of a material that is transparent over at least a portion of the predetermined range of wavelengths in the electromagnetic spectrum in which the substrate is also transparent, wherein said interface block is positioned in said light path and between the substrate and said optical element.2. The system according to claim 1 , wherein said interface block is shaped in the form of a rectangular parallelepiped.3. The system according to claim 1 , wherein said interface block is shaped in the form of a triangular parallelepiped.4. The system according to claim 1 , wherein said interface block is composed of a gradient index material.5. The system according ...

LASER ABLATION FOR THE ENVIRONMENTALLY BENEFICIAL REMOVAL OF SURFACE COATINGS

A laser-based method of removing a coating from a surface comprises directing a laser pulse to a first position on the surface, removing the coating from the first position by rapidly elevating a surface temperature of the first position using the laser pulse and thereby disassociating the coating from the surface and collecting the disassociated coating. In some embodiments, the coating comprises an environmentally harmful substance such as Hexavalent Chromium. In some embodiments, the coating comprises Diamond-Like Carbon (DLC), Vitrified Contaminant Material (CMAS). The disassociated coating is collected by a waste collector. 122-. (canceled)23. A laser-based coating removal system comprising:a. a laser source to provide a laser pulse for removing a coating from a surface, wherein the laser pulse elevates a temperature of the surface to a critical temperature at which the coating separates from the surface, and wherein the separation of the coating occurs at a wavelength with a low transmissivity with respect to the coating; andb. a waste collector for collecting the separated coating.24. The laser-based coating removal system of claim 23 , wherein the laser pulse comprises a delivered power of 350 W claim 23 , a fluence of 5 J/cmand an irradiance of 35 MW/cm.25. The laser-based coating removal system of claim 23 , wherein the coating comprises an environmentally harmful substance.26. The laser-based coating removal system of claim 23 , wherein the coating comprises diamond-like carbon or vitrified contaminant material comprising a mixture of calcium oxide claim 23 , magnesium oxide claim 23 , aluminum oxide claim 23 , and silicon oxide.27. The laser-based coating removal system of claim 26 , wherein the surface temperature is elevated to an oxidation temperature of the diamond-like carbon and the diamond-like carbon is converted to vapor-phase carbon dioxide before it is collected.28. The laser-based coating removal system of claim 26 , wherein the surface ...

WAFER PROCESSING METHOD

A wafer processing method is disclosed to divide a wafer of glass substrate into individual chips along division lines. In the shield tunnel forming step, a pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at a region corresponding to each division line so that a plurality of shield tunnels which are each formed of perforations and affected regions surrounding the perforations are formed along the division lines, respectively. In the modified layer forming step, another pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at the region corresponding to each division line so that modified layers are formed in addition to the shield tunnels along the division lines, respectively. In the dividing step, an external force is applied to the wafer to divide the wafer into individual chips. 1. A wafer processing method for dividing a wafer of glass substrate into individual chips along a plurality of division lines formed intersecting one another , comprising:a shield tunnel forming step of irradiating a first pulsed laser beam of a wavelength, which transmits through the wafer, with its focal point positioned inside the wafer at a region corresponding to each division line so that a plurality of shield tunnels which are each formed of perforations and affected regions surrounding the perforations are formed along the division lines, respectively,a modified layer forming step of irradiating a second pulsed laser beam of a wavelength, which transmits through the wafer, with its focal point positioned inside the wafer at the region corresponding to each division line so that modified layers are formed in addition to the shield tunnels along the division lines, respectively, anda dividing step of applying an external force to the wafer to divide the wafer into individual chips.2. The wafer processing method according to claim 1 , wherein the wafer ...

WAFER PRODUCING METHOD

A wafer producing method for producing a wafer from an ingot, the ingot being previously formed with a separation layer along which the wafer is to be separated from the ingot. The wafer producing method includes a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a high density to thereby form a partially broken portion where a part of the separation layer is broken, a second ultrasonic vibration applying step of applying the ultrasonic vibration to the whole area of the ingot larger than the given area at a low density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion, and a separating step of separating the wafer from the ingot along the fully broken portion. 1. A wafer producing method for producing a wafer from an ingot after forming a separation layer inside the ingot by setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from one end surface of the ingot , the predetermined depth corresponding to a thickness of the wafer to be produced , and next applying the laser beam to the ingot , the wafer producing method comprising:a first ultrasonic vibration applying step of applying ultrasonic vibration to a given area of the ingot at a first density to thereby form a partially broken portion where a part of the separation layer is broken;a second ultrasonic vibration applying step of applying the ultrasonic vibration to a whole area of the ingot larger than the given area at a second density lower than the first density, after performing the first ultrasonic vibration applying step, thereby forming a fully broken portion where the separation layer is fully broken in such a manner that breaking starts from the partially broken portion; anda separating step of separating the ...

METHODS OF CUTTING GLASS USING A LASER

A method of cutting a glass article includes translating a laser beam relative to a first surface of the glass article. The laser beam includes a beam waist having a center. The center of the beam waist of the laser beam is positioned at or below a second surface of the glass article. The laser beam creates a plurality of defects along a score line in the glass article such that the plurality of defects extends a distance into the glass article, and at least some individual defects of the plurality of defects are non-orthogonal to the first surface of the glass article and are biased in a direction of translation of the laser beam. Glass articles having edge defects are also disclosed. 1. A method of scoring a glass article having a thickness between 0.1 millimeter to 2.0 millimeters , the method comprising:translating a laser beam relative to a first surface of the glass article, the laser beam comprising a beam waist having a center, wherein:the laser beam is a pulsed laser beam, said laser beam operates at a wavelength from 350 nanometers to 619 nanometers and has a pulse duration from 1 nanosecond to 50 nanoseconds;the center of the beam waist of the laser beam is positioned at or below a second surface of the glass article such that the laser beam passes through the thickness of the glass article;the laser beam creates a plurality of defects along a score line in the glass article such that the plurality of defects extends a distance into the glass article from the second surface; andat least some individual defects of the plurality of defects are non-orthogonal to the first surface of the glass article and are biased in a direction of translation of the laser beam.2. The method of claim 1 , wherein the laser beam is oriented orthogonally to the first surface of the glass article.3. The method of claim 1 , wherein the laser beam is translated relative to the glass article at a speed S greater than about 20 millimeters per second claim 1 , and the laser beam has ...

SCRIBING THIN CERAMIC MATERIALS USING BEAM FOCAL LINE

Embodiments of a method of scribing a ceramic material are provided. In the method, a ceramic material having a thickness of 500 μm or less between a first outer surface and a second outer surface is provided. The second outer surface is opposite the first outer surface. A beam focal line is directed at the ceramic material, and the beam focal line has a length over which its intensity is greater than a damage threshold of the ceramic material. The length is longer than the thickness of the ceramic material. Further, a damage track defining at least a first section of the ceramic material and a second section of the ceramic material is created by moving the beam focal line relative to the ceramic material. Also provided are embodiments of a laser scribed component and embodiments of a laser scribed ceramic substrate. 110-. (canceled)11. A laser scribed ceramic component , comprising:a ceramic material having a thickness of 500 μm or less between a first outer surface and a second outer surface; anda scribed edge having at a plurality of ablated regions extending from the first outer surface into the thickness of the ceramic material, each ablated region spaced from 2 μm to 50 μm apart from an adjacent ablated region;wherein each of the plurality of ablated regions have a first surface roughness and a depth of less than 10 μm; andwherein a remainder of the scribed edge is a cleaved edge having a second surface roughness, the first surface roughness being less than the second surface roughness.12. The laser scribed ceramic component of claim 11 , wherein the ceramic material comprises at least one of alumina claim 11 , zirconia claim 11 , titania claim 11 , or silica.13. The laser scribed ceramic component of claim 11 , wherein the ceramic material has a thickness of from 10 μm to 100 μm.14. The laser scribed ceramic component of claim 11 , having an edge strength of at least 620 MPa.15. The laser scribed ceramic component of claim 11 , having a break resistance of ...

SYSTEM AND METHOD FOR CREATION OF A PREDETERMINED STRUCTURE FROM A DIAMOND BULK

Aspects of the invention may be directed to a method of creating a predetermined structure from a diamond bulk. In some embodiments, the method may include: irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, the laser may create graphitization at locations where the focal point of the laser engages the diamond bulk; at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme; removing of the graphite from the diamond bulk; and extracting the predetermined structure from the diamond bulk. 1. A method of creating a predetermined structure from a diamond bulk , the method comprising:irradiating the diamond bulk with at least one laser having a focal point at a predetermined location, wherein the laser creates graphitization at locations where the focal point of the laser engages the diamond bulk;at least one of: moving the diamond bulk to be positioned with the focal point of the laser within the diamond bulk, and moving the at least one laser such that diamond bulk be positioned with the focal point of the laser, along at least one axis wherein the movement corresponds to a predefined scheme;removing of the graphite from the diamond bulk; andextracting the predetermined structure from the diamond bulk.2. The method of claim 1 , wherein the at least one laser is at least one of ultrafast laser and ultra-violet laser.3. The method of claim 1 , wherein the at least one laser emits light having pulses of less than 200 nanosecond seconds.48.-. (canceled)9. The method of claim 1 , comprising moving the diamond bulk along at least two axes to create a three-dimensional structure.10. (canceled)11. The method of claim 1 , comprising removing of the graphite from the diamond bulk using ...