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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 9451. Отображено 100.
13-12-2012 дата публикации

Manufacturing method for semiconductor wafer

Номер: US20120315739A1
Автор: Tomohiro Hashii, Yoshiaki Kurosawa, Yuichi Kakizono
Принадлежит: Sumco Corp

All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling.

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Номер записи: 1
02-05-2013 дата публикации

Deburring machine

Номер: US20130109283A1
Автор: LIANG Zhu, Ming-lu YANG, zhong-wei Yang
Принадлежит: Hon Hai Precision Industry Co Ltd

A deburring machine for removing burrs from workpieces includes a framework, a deburring mechanism and a transport mechanism. The deburring mechanism mounted on the framework, includes deburring units positioned on the framework. The transport mechanism is positioned on the framework adjacent to the deburring units. The transport mechanism includes a base, multi-station rotating plate and a first driver. The base is positioned on the framework. The multi-station rotating plate is rotatably positioned on the base. The first driver is positioned on the framework and connects with the base. The first driver is capable of driving the multi-station rotating plate to transport the workpieces to the plurality of deburring units, the plurality of deburring units are capable of removing the burrs of the workpieces.

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Номер записи: 2
22-08-2013 дата публикации

METHOD FOR MACHINING A CASING OF AN AIRCRAFT TURBOSHAFT ENGINE AND SCRAPER TOOL FOR IMPLEMENTING SAID METHOD

Номер: US20130216322A1
Автор: Engrand Eric Dany Robert Jean
Принадлежит: SNECMA

A method for machining a casing of an aircraft turboshaft engine, the casing including an upstream edge and a downstream edge. The method includes: positioning the casing in a chassis; rotating the chassis at a rotational milling speed; milling a downstream edge and/or upstream edge of the casing by a milling device, so as to correct axial length of the casing; and deburring the casing edge so as to remove at least one burr formed in a vicinity of the edge as a result of the milling, the milling device including a scraper tool which turn-machines the burr as the casing is rotated. 19-. (canceled)10: A method for machining an aircraft turboshaft engine casing , the casing extending along a casing axis and including an upstream edge and a downstream edge , the method comprising:positioning the casing in a chassis;rotating the casing according to the casing axis at a milling rotation speed;milling a downstream edge and/or upstream edge of the casing by a milling device so as to correct axial length of the casing, the milling device including a milling tool machining the casing edge upon the rotating the casing at a milling rotation speed;deburring the casing edge so as to remove at least one burr formed in a vicinity of the edge further to the milling;the milling device including a scraper tool used in the deburring, wherein the scraper tool machines the burr by turning upon the casing rotating at the milling rotation speed.11: The method according to claim 10 , wherein the casing includes an inside portion turned to the casing axis and an outside portion opposed to the inside portion claim 10 , the inside portion and the outside portion of the casing edge are successively machined upon the deburring while holding the casing positioned within the chassis.12: The method according to claim 11 , wherein claim 11 , upon the deburring claim 11 , the upstream and downstream edges of the casing are machined while holding the casing positioned within the chassis.13: A scraper ...

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Номер записи: 3
29-08-2013 дата публикации

BRUSH-TYPE DEBURRING MACHINE

Номер: US20130225048A1
Автор: Rattunde Ulrich
Принадлежит: RATTUNDE & CO. GMBH

The invention concerns a brush-type deburring machine for deburring opposed ends of at least one elongate profile formed in a longitudinal direction during conveying in a conveying direction with two rows of conveying discs arranged in the conveying direction, wherein the conveying discs are arranged opposite one another in pairs and in each case have at least one aperture corresponding to an opposite aperture for receiving the at least one elongate profile, a gripping device by which the at least one elongate profile is capable of being inserted into the mutually corresponding apertures, with a pressing device arranged between the corresponding apertures and by which a force is capable of being exerted upon the at least one elongate profile in a direction radially towards the inside with respect to the conveying discs into the corresponding apertures. 1. A brush-type deburring machine for deburring opposed ends of at least one elongate profile formed in a longitudinal direction during conveying in a conveying direction with two rows of conveying discs arranged in the conveying direction , wherein the conveying discs are arranged opposite one another in pairs and in each case have at least one aperture corresponding to an opposite aperture for receiving the at least one elongate profile , a gripping device by which the at least one elongate profile is capable of being inserted into the mutually corresponding apertures , characterized by a pressing device which is arranged between the corresponding apertures and by which a force is capable of being exerted upon the at least one elongate profile in a direction radially towards the inside with respect to the conveying discs into the corresponding apertures.2. A brush-type deburring machine according to claim 1 , characterized in that the pressing device has a spring which is made elongate in the conveying direction and the end of which facing away from the corresponding apertures is arranged fixed in position on a ...

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Номер записи: 4
26-09-2013 дата публикации

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE SEPARATING APPARATUS

Номер: US20130248099A1
Автор: SHIMIZU Noriko, Takyu Shinya
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, there is disclosed a method of manufacturing a semiconductor device forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate, bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer, removing physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer. 1. A method of manufacturing a semiconductor device comprising:forming a release layer on a region excluding a peripheral edge portion of a surface of a first substrate;bonding a second substrate to at least a region including the release layer of the surface of the first substrate via an adhesive layer; andremoving physically a peripheral edge portion of the second substrate in a manner that at least a surface of the adhesive layer right under the peripheral edge portion of the second substrate is exposed, the adhesive layer is caused to remain between the peripheral edge portion of the first substrate and the second substrate, and adhesion between the first and second substrates is maintained, and then dissolving the adhesive layer.2. The method according to claim 1 ,wherein the peripheral edge portion of the second substrate is removed in a manner that an outer edge of the second substrate is positioned at an outer side from an outer edge of the release layer in plan view.3. The method according to claim 2 ,{'sub': '1', 'wherein the peripheral edge portion of the second substrate is removed in a manner that a distance (W) between the outer edge of the second substrate and the outer edge of the release ...

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Номер записи: 5
26-09-2013 дата публикации

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

Номер: US20130252401A1
Автор: Matsumoto Naoki, Mikami Hidenori, YAMAGUCHI Sayuri
Принадлежит: Sumitomo Electric Industries, Ltd.

A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [−1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle θ or θ of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface. Accordingly, cracking and chipping occurring from the edge of the outer periphery of the nitride semiconductor substrate can be effectively suppressed. 15-. (canceled)6: A method for manufacturing a nitride semiconductor substrate , comprising the steps of:preparing a nitride semiconductor substrate having a main surface inclined at an angle of 71° or more and 79° or less with respect to a (0001) plane toward a [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to a (000-1) plane toward a [−1100] direction; andchamfering an edge of an outer periphery of said main surface of said nitride semiconductor substrate,said step of chamfering the edge includes the step of forming a chamfered portion inclined at an angle of 5° or more and 45° or less with respect to adjacent one of said main surface and a backside surface on a side opposite to said main surface.7: A method for manufacturing a semiconductor device , comprising the steps of:{'claim-ref': {'@idref': 'CLM-00006', 'claim 6'}, 'preparing a nitride ...

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Номер записи: 6
03-10-2013 дата публикации

BRUSH-TYPE DEBURRING MACHINE

Номер: US20130260652A1
Автор: Rattunde Ulrich
Принадлежит:

The invention concerns a brush-type deburring machine for simultaneously deburring of an elongate profile section arranged in the longitudinal direction during conveying in a conveying direction with two rows, extending respectively in the conveying direction, of conveying discs arranged offset with respect to each other and having apertures arranged along the periphery thereof for receiving the opposite ends, which are arranged offset with respect to one another, in order to permit a transfer of the elongate profile sections in the conveying direction by rotation of the conveying discs, and the two rows are at a distance adjustable in the longitudinal direction from a minimum distance of less than 80 mm from each other, and with two rotatable brush rollers which are orientated in each case in the conveying direction along one of the two rows (and which are intended for the deburring of the two opposite ends of the conveyed elongate profile sections. 1. A brush-type deburring machine for simultaneously deburring opposite ends of an elongate profile section arranged in the longitudinal direction , during conveying in a conveying direction , with two rows—extending in each case in the conveying direction—of conveying discs arranged offset with respect to one another in each case and having apertures arranged in each case along the periphery thereof for receiving the ends which are arranged offset with respect to one another , in order to permit a transfer of the elongate profile sections in the conveying direction by rotation of the conveying discs , and the two rows are at a distance adjustable in the longitudinal direction from a minimum distance of less than 80 mm from each other , and with two rotatable brush rollers which are orientated in each case in the conveying direction along one of the two rows and which are intended for the deburring of the two ends of the conveyed elongate profile sections.2. A brush-type deburring machine according to claim 1 , ...

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Номер записи: 7
10-10-2013 дата публикации

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME

Номер: US20130264584A1
Автор: ISHIBASHI Keiji, Okita Kyoko
Принадлежит: Sumitomo Electric Industries, Ltd.

A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface. A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided. 1. A silicon carbide single-crystal substrate , comprising:a first surface;a second surface opposite to said first surface; anda peripheral edge portion sandwiched between said first surface and said second surface,a plurality of grinding traces being formed in a surface of said peripheral edge portion,a chamfer width as a distance from an outermost peripheral end portion of said peripheral edge portion to one of said plurality of grinding traces which is located on an innermost peripheral side of said peripheral edge portion in a direction parallel to said first surface being not less than 50 μm and not more than 400 μm.2. The silicon carbide single-crystal substrate according to claim 1 , wherein said surface of said peripheral edge portion has an arithmetic mean roughness of not less than 0.07 μm and not more than 3 μm.3. The silicon carbide single-crystal substrate according to claim 1 , whereinsaid peripheral edge portion includes a process-damaged layer as a layer having a disrupted crystal lattice, andsaid process-damaged layer has a maximum thickness of not less than 0.5 μm and not more than 10 μm.4. A method for manufacturing a silicon carbide single-crystal substrate claim 1 , comprising the steps of: ...

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Номер записи: 8
10-10-2013 дата публикации

METHOD OF PRODUCING EPITAXIAL WAFER AND THE EPITAXIAL WAFER

Номер: US20130264690A1
Автор: Masuda Sumihisa, Narahara Kazuhiro
Принадлежит: SUMCO CORPORATION

The present invention provides a method of producing an epitaxial wafer having a highly flat rear surface without polishing top and rear surfaces of the epitaxial wafer after forming an epitaxial film. A method of producing an epitaxial wafer according to the present invention comprises a step of preparing a semiconductor wafer having a beveled portion formed on its end portion, a first surface a second surface opposite to the first surface and edges and on both of the first surface and the second surface the each edge and is boundary with the beveled portion a step of processing of rolling off an outer peripheral portion of the first surface to form a roll-off region, the outer peripheral portion is extending outward of the wafer from a predetermined position P inner than the position of the edge on the first surface and a step of forming a first epitaxial film on the second surface 1. A method of producing an epitaxial wafer , comprising:a step of preparing a semiconductor wafer having a beveled portion formed on its end portion, a first surface, a second surface opposite to the first surface, and edges on both of the first surface and the second surface, the each edge is boundary with the beveled portion;a step of processing of rolling off an outer peripheral portion of the first surface to form a roll-off region, the outer peripheral portion is extending outward of the wafer from a predetermined position inner than the position of the edge on the first surface; anda step of forming a first epitaxial film on the second surface.2. The method of producing an epitaxial wafer according to claim 1 , wherein a roll-off amount of the outer peripheral portion is determined based on a film thickness of a second epitaxial film which attaches to the outer peripheral portion of the first surface when the first epitaxial film is formed on the second surface.3. The method of producing an epitaxial wafer according to claim 2 , wherein the rolling-off step is performed by a ...

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Номер записи: 9
17-10-2013 дата публикации

Method and system for finishing glass sheets

Номер: US20130273810A1
Автор: James Guy Oliver, Qing Ya Wang, Tzu-Hen Hsu, Xinhao Zhang, Yuyin Tang
Принадлежит: Corning Inc

A method of finishing glass sheets includes forming a stack comprising alternating layers of unfinished glass sheets and spacer pads. The stack is such that there is no physical contact between any two adjacent unfinished glass sheets and outer edges of the spacer pads are recessed relative to outer edges of the unfinished glass sheets. The stack is secured by clamping the unfinished glass sheets and spacer pads together and then supported on a working surface. The unfinished glass sheets of the stack are finished simultaneously while the stack is supported on the working surface. After the finishing, the stack comprises alternating layers of finished glass sheets and spacer pads.

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Номер записи: 10
31-10-2013 дата публикации

Deburring machine abrasive belt, chamfering-deburring machine that deburrs twice per rotation, and deburring method

Номер: US20130288579A1
Автор: Yongqi CHEN
Принадлежит: Hangzhou Xiangsheng Abrasive Machine Manufacturing Co Ltd

The present invention relates to a one-circle two-chamfer deburring machine and a deburring method comprising the following steps after starting up: (1) The upper wheelhead motor drives the upper grinding belt to rotate horizontally (2) the lower wheelhead motor drives the lower grinding belt to rotate horizontally and (3) when a deburred workpiece goes through a passage formed by the active feeding roller row and the upper grinding belt, an upper abrasive block elastically contacts surface of the workpiece and, under the drive of the upper wheelhead motor and the upper active drum, polishes and deburrs the front side of the workpiece twice; the lower abrasive block elastically contacts the surface of the workpiece and, under the drive of the lower wheelhead motor and the lower active drum, polishes and deburrs the back side of the workpiece twice.

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Номер записи: 11
07-11-2013 дата публикации

SYSTEMS AND METHODS FOR INGOT GRINDING

Номер: US20130295403A1
Автор: Hicks James A., Mercurio Nicholas R.
Принадлежит: MEMC Singapore Pte. Ltd.(UEN200614794D)

A method of grinding an ingot for use in manufacturing a semiconductor or solar wafer is disclosed. The method includes providing an ingot including four flat sides and four rounded corner portions, each corner portion extending between an adjacent pair of the flat sides, and grinding a plurality of planar facets on each corner portion, each planar facet of the corner portion joined to an adjacent facet at a juncture and oriented such that each corner portion has a substantially arcuate shape. A wafer and ingot are also disclosed. 1. A method of grinding an ingot for use in manufacturing semiconductor or solar wafers , the method comprising:providing an ingot including four flat sides and four corner portions, each corner portion extending between an adjacent pair of the flat sides; andgrinding a plurality of planar facets on each corner portion, each planar facet of the corner portion joined to an adjacent facet at a juncture and oriented such that each corner portion has a substantially arcuate shape.2. A method in accordance with claim 1 , wherein grinding a plurality of planar facets comprises:rotating the ingot to a predetermined position;advancing a grinding surface towards the corner portion such that the grinding surface forms one of the planar facets on the corner portion; andretracting the grinding surface from the corner portion.3. A method in accordance with claim 1 , further comprising smoothing the junctures such that each corner portion has a smooth claim 1 , creaseless surface.4. A method in accordance with claim 3 , wherein smoothing the junctures comprises:rotating the ingot back and forth about a longitudinal axis of the ingot in small increments; andapplying a grinding surface to the junctures while the ingot is rotated back and forth.5. A method in accordance with claim 1 , wherein each corner portion includes a first planar facet joined to a first flat side at a first interface and a second planar facet joined to a second flat side at a second ...

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Номер записи: 12
26-12-2013 дата публикации

WAFER PROCESSING METHOD

Номер: US20130344775A1
Автор: SEKIYA Kazuma
Принадлежит:

A wafer processing method of processing a wafer having an epitaxial film formed on the front side. The wafer processing method includes a holding step of holding the wafer on a holding table having a holding surface for holding the wafer and a rotational axis extending perpendicularly to the holding surface and passing through the center of the holding surface, and a removing step of pressing a grinding member on a ridge portion formed along the peripheral edge of the wafer held on the holding table and rotating the holding table about the rotational axis, thereby removing the ridge portion. 1. A wafer processing method of processing a wafer having an epitaxial film formed on a front side , said wafer processing method comprising:a holding step of holding said wafer on a holding table having a holding surface for holding said wafer and a rotational axis extending perpendicularly to said holding surface and passing through the center of said holding surface; anda removing step of pressing a grinding member on a ridge portion formed along the peripheral edge of said wafer held on said holding table and rotating said holding table about said rotational axis, thereby removing said ridge portion.2. The wafer processing method according to claim 1 , wherein said wafer is held on said holding table in the condition where the center of said wafer is deviated from said rotational axis of said holding table in said holding step.3. The wafer processing method according to claim 1 , wherein said wafer is formed of silicon carbide. 1. Field of the InventionThe present invention relates to a wafer processing method of processing a wafer having an epitaxial film formed on the front side.2. Description of the Related ArtEpitaxial growth on the front side of a semiconductor crystal substrate (wafer) of silicon (Si) or the like causes undesirable formation of a ridge portion of an epitaxial film, called edge crown, along the peripheral edge of the wafer. To cope with this problem, ...

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Номер записи: 13
20-02-2014 дата публикации

Grinding wheel for wafer edge trimming

Номер: US20140051336A1
Автор: Chia-Shiung Tsai, Lan-Lin Chao, Ping-Yin Liu, Xin-Hua Huang, Yuan-Chih Hsieh
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A grinding wheel for wafer edge trimming includes a head having an open side and an abrasive end bonded around an edge of the open side of the head. The abrasive end is arranged to have multiple simultaneous contacts around a wafer edge during the wafer edge trimming.

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Номер записи: 14
13-03-2014 дата публикации

METHOD AND APPARATUS FOR WAFER BACKGRINDING AND EDGE TRIMMING ON ONE MACHINE

Номер: US20140073223A1
Автор: Ciszek Richard, Daniel Clifford, Trojan Daniel R.
Принадлежит: AXUS TECHNOLOGY, LLC

A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states. 1. A workpiece processing apparatus , the apparatus comprising:a rotary turntable configured to rotate about a turntable axis;a spindle on the turntable, the spindle being configured to secure a workpiece thereon, the spindle being configured to rotate about a spindle axis independently of the rotation of the turntable;a grind spindle, the grind spindle being configured to overlay the turntable and functionally engage the workpiece when rotated thereunder;wherein the apparatus is configured to transition between a first operational state and a second operational state, andwherein in the first operational state the turntable is configured in a first position to center the spindle and the workpiece thereon under the grind spindle so that the grind spindle may condition an entire top surface of the workpiece, andwherein in the second operational state the turntable is configured to be offset an offset distance from the first position to offset the spindle and the workpiece thereon from the center of the grind ...

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Номер записи: 15
13-03-2014 дата публикации

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME

Номер: US20140073228A1
Автор: ISHIBASHI Keiji, Okita Kyoko
Принадлежит: Sumitomo Electric Industries, Ltd.

A silicon carbide single-crystal substrate includes a first surface, a second surface opposite to the first surface, and a peripheral edge portion sandwiched between the first surface and the second surface, A plurality of grinding traces are formed in a surface of the peripheral edge portion. A chamfer width as a distance from an outermost peripheral end portion of the peripheral edge portion to one of the plurality of grinding traces which is located on an innermost peripheral side of the peripheral edge portion in a direction parallel to the first surface is not less than 50 μm and not more than 400 μm. Thereby, a silicon carbide single-crystal substrate capable of suppressing occurrence of a crack, and a method for manufacturing the same can be provided. 13-. (canceled)4. A method for manufacturing a silicon carbide single-crystal substrate , comprising the steps of:preparing a silicon carbide single crystal having a first surface, a second surface opposite to said first surface, and a peripheral edge portion sandwiched between said first surface and said second surface;preparing a grindstone having diamond abrasive grains embedded in a binder, a hardness grade of said diamond abrasive grains and said binder in accordance with the Japanese Industrial Standards being L to N, a degree of concentration of said diamond abrasive grains being not less than 80 and not more than 150; andpolishing said peripheral edge portion using said grindstone.5. The method for manufacturing a silicon carbide single-crystal substrate according to claim 4 , wherein said diamond abrasive grains have a grain size of #400 to #2500 in accordance with the Japanese Industrial Standards. 1. Field of the InventionThe present invention relates to a silicon carbide single-crystal substrate and a method for manufacturing the silicon carbide single-crystal substrate, and more particularly to a silicon carbide single-crystal substrate having a peripheral edge portion and a method for manufacturing ...

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Номер записи: 16
27-03-2014 дата публикации

METHOD OF DETECTING ABNORMALITY IN POLISHING OF A SUBSTRATE AND POLISHING APPARATUS

Номер: US20140087627A1
Автор: SEKI Masaya, TAKENAKA Hiroyuki, TOGAWA Tetsuji
Принадлежит:

A method of detecting an abnormality in polishing of a substrate is provided. The method includes: rotating the substrate; pressing a polishing tool against an edge portion of the substrate to polish the edge portion; measuring a position of the polishing tool relative to a surface of the substrate; determining an amount of polishing of the substrate from the position of the polishing tool; calculating a polishing rate from the amount of polishing of the substrate; and judging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range. 1. A method of detecting an abnormality in polishing of a substrate , said method comprising:rotating the substrate;pressing a polishing tool against an edge portion of the substrate to polish the edge portion;measuring a position of the polishing tool relative to a surface of the substrate;determining an amount of polishing of the substrate from the position of the polishing tool;calculating a polishing rate from the amount of polishing of the substrate; andjudging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.2. The method according to claim 1 , wherein said judging comprises judging that an abnormality in polishing of the edge portion of the substrate has occurred if the number of times the polishing rate goes beyond a predetermined range reaches a predetermined number.3. The method according to claim 1 , wherein said judging comprises judging that an abnormality in polishing of the edge portion of the substrate has occurred if a period of time the polishing rate is out of a predetermined range exceeds a predetermined threshold value.4. The method according to claim 1 , further comprising:terminating polishing of the edge portion of the substrate if the abnormality in polishing of the edge portion of the substrate is judged to have occurred.5. The method according ...

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Номер записи: 17
03-04-2014 дата публикации

POLISHING METHOD

Номер: US20140094095A1
Автор: TOGAWA Tetsuji, YAMASHITA Michiyoshi, YOSHIDA Atsushi
Принадлежит: EBARA CORPORATION

A polishing method includes rotating a substrate, performing a first polishing process of pressing a polishing tape against an edge portion of the substrate by a pressing member, with a portion of the polishing tape projecting from the pressing member inwardly in a radial direction of the substrate, to polish the edge portion of the substrate and bend the portion of the polishing tape along the pressing member, and performing a second polishing process of pressing the bent portion of the polishing tape inwardly in the radial direction of the substrate by the pressing member to further polish the edge portion of the substrate. 1. A polishing method , comprising:rotating a substrate;performing a first polishing process of pressing a polishing tape against an edge portion of the substrate by a pressing member, with a portion of the polishing tape projecting from the pressing member inwardly in a radial direction of the substrate, to polish the edge portion of the substrate and bend the portion of the polishing tape along the pressing member; andperforming a second polishing process of pressing the bent portion of the polishing tape inwardly in the radial direction of the substrate by the pressing member to further polish the edge portion of the substrate.2. The polishing method according to claim 1 , wherein the bent portion of the polishing tape is longer than a depth of a polished portion formed on the edge portion of the substrate in the first polishing process.3. The polishing method according to claim 1 , wherein at least one of the first polishing process and the second polishing process is performed while moving the polishing tape in its longitudinal direction.4. The polishing method according to claim 3 , wherein a movement direction of the polishing tape is opposite to a movement direction of the edge portion of the rotating substrate.5. The polishing method according to claim 1 , wherein:the polishing tape used in the first polishing process is a rough ...

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Номер записи: 18
04-01-2018 дата публикации

Wheel Deburring Device

Номер: US20180001436A1
Автор: Guo Jiandong, XUE Bowen
Принадлежит: CITIC Dicastal CO., LTD

A wheel deburring device. A motor II drives an upper brush to rotate, cylinders II enable the upper brush to fall through posts III, and burrs of a front surface can be removed when the upper brush is in contact with the front surface of a wheel; a motor I enables an outer ring and a geared ring I to rotate through a belt I; a motor III enables an inner ring and a geared ring II to rotate through a belt II, directions of rotation of the inner ring and the geared ring II are opposite to that of the outer ring, and brushes are driven to rotate through a gear; and cylinders IV enable a lower brush to rise through guide posts I, and burrs of a back cavity of the wheel can be removed when the lower brush is in contact with that back cavity. 1a machine frame, guide posts I, a cylinder I, a motor I, a rotary joint, a belt pulley I, a belt pulley II, a belt pulley III, guide sleeves I, a synchronizing belt I, a rising and falling plate I, a large bearing block, a hollow shaft, a spline housing, a spline shaft, a spring, a clamp, a lower brush, a flange sleeve, a conical column, a pressing ring, guide posts II, an upper brush, a rotary shaft, an upper bearing block, a rising and falling plate II, guide sleeves II, guide posts III, guide sleeves III, a motor II, cylinders II, cylinders III, cylinders IV, a synchronizing belt II, a belt pulley IV and a motor III;wherein four guide posts I are fixed between the bottom of the machine frame and a working platform of the machine frame;four guide sleeves I matched with the guide posts I are mounted on the rising and falling plate I;the motor I, of which an output end is provided with the belt pulley III, is fixed below the rising and falling plate I through a flange; the motor III, of which an output end is provided with the belt pulley IV, is also fixed below the rising and falling plate I through a flange;the large bearing block is fixed above the rising and falling plate I, and the hollow shaft is mounted inside the large ...

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Номер записи: 19
07-01-2016 дата публикации

METHOD FOR POLISHING PHOTONIC CHIPS

Номер: US20160004011A1
Автор: GREGORY MATTHEW A., Pomerene Andrew TS
Принадлежит:

A method for polishing photonic chips is described. A gauge is placed in a photonic chip adjacent to an edge to be polished. The gauge includes a set of bars of various lengths. The bar lengths can be progressively ordered from shortest to longest or vice versa. The photonic chip is then secured in a chip polishing jig to get ready for polishing. When the photonic chip is being polished, an operator can visually inspect the gauge by looking at the polishing edge to estimate a polishing depth in order to determine a stopping point for polishing. Once the stopping point has been reached, the polishing of the photonic chip can be stopped. 1. A method for polishing a photonic chip edge , said method comprising:placing a gauge underneath a surface of a photonic chip, wherein said gauge is located adjacent to an edge to be polished, wherein said gauge includes a plurality of bars of various lengths;securing said photonic chip in a chip polishing jig;when said photonic chip is being polished, determining a stopping point by visually inspecting said bars of said gauge to estimate a polishing depth at which polishing should stop; andstopping polishing said photonic chip after said stopping point has been reached.2. The method of claim 1 , wherein said determining further includes basing on the number of bars on said gauge uncovered by said polishing.3. The method of claim 1 , wherein said determining further includes basing on the number of bars on said gauge removed by said polishing.4. The method of claim 1 , wherein said bars are located at different distance from said edge.5. The method of claim 1 , wherein said bars are located at equal distance from said edge.6. The method of claim 1 , wherein said gauge is located at the same level as a waveguide.7. The method of claim 1 , wherein said gauge is made of the same material as a waveguide.8. The method of claim 1 , wherein said gauge is made of silicon.9. The method of claim 1 , wherein said visually inspecting further ...

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Номер записи: 20
02-01-2020 дата публикации

Method of processing a ferrule and apparatus for carrying out the method

Номер: US20200003962A1
Автор: Cameron John TOVEY
Принадлежит: Corning Research and Development Corp

A method of processing at least one ferrule is disclosed. The at least one ferrule includes an end face. The method includes engaging the end face of the at least one ferrule and an abrasive element with each other at the mating interface; moving the at least one ferrule and the abrasive element relative to each other; and tracing a spiral path in the abrasive element due to the relative movement between the at least one ferrule and the abrasive element. An apparatus for carrying out the method is also disclosed.

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Номер записи: 21
02-01-2020 дата публикации

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20200004093A1
Автор: Hwang Yongsik, Jang Yanggyu, Kim Eon-young, KIM Jaehong, Lee Nam-wook, Song Seungki, Yoo Chansol
Принадлежит:

A display device including a substrate including: a top surface, a bottom surface, and a plurality of side surfaces connecting the top surface and the bottom surface; a signal line disposed on the top surface; a sidewall electrode in electrical contact with the signal line and disposed on a first side surface of the side surfaces; and a connection electrode in electrical contact with the sidewall electrode and disposed on the first side surface. 1. A display device comprising:a substrate comprising a top surface, a bottom surface, and a plurality of side surfaces connecting the top surface and the bottom surface;a signal line disposed on the top surface;a sidewall electrode in electrical contact with the signal line and disposed on a first side surface of the side surfaces; anda connection electrode in electrical contact with the sidewall electrode and disposed on the first side surface.2. The display device of claim 1 , wherein an overlapping area between the connection electrode and the sidewall electrode is greater than an overlapping area between the connection electrode and the signal line.3. The display device of claim 1 , wherein a thickness of the sidewall electrode is less than a thickness of the signal line.4. The display device of claim 1 , further comprising an auxiliary electrode disposed on the signal line and in electrical contact with the signal line and the connection electrode.5. The display device of claim 1 , further comprising:an upper substrate facing the substrate;an upper sidewall electrode disposed on a side surface of the upper substrate, which is aligned with the first side surface; anda sealing member disposed between the substrate and the upper substrate and electrically connecting the upper sidewall electrode to the signal line.6. The display device of claim 5 , wherein the connection electrode is in electrical contact with the sidewall electrode of the substrate and the upper sidewall electrode of the upper substrate.7. The display ...

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Номер записи: 22
07-01-2016 дата публикации

Method for manufacturing a circular wafer by polishing the periphery, including a notch or orientation flat, of a wafer comprising crystal material, by use of polishing tape

Номер: US20160005593A1
Автор: Naohiro Yamaguchi
Принадлежит: Mipox Corp

Provided is a method for producing a circular wafer using a grinding tape to grind the edge of a wafer comprising a crystalline material. A primary grinding step is provided for contacting a grinding body to the peripheral portion of a wafer placed centered on a horizontal stage and rotating the stage, thus grinding the peripheral portion. The radius of the wafer is measured, and a radius is set that is no greater than the measured smallest radius, and the difference Δr between the set radius and the measured wafer radius along the peripheral portion is determined. The portions of the peripheral portion at which Δr is greater than a predetermined value are determined and a secondary grinding step is provided for contacting the peripheral portion and the grinding body, rotating the stage forwards and backwards in a predetermined range of rotational angles, and grinding the peripheral portion.

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Номер записи: 23
02-01-2020 дата публикации

METHOD FOR MANUFACTURING WAFER

Номер: US20200006047A1
Автор: NAKATANI Yuya
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for manufacturing a wafer product, including the steps of: chamfering a circumferential edge portion of a wafer; lapping or double-side grinding main surfaces thereof; etching; mirror-polishing the main surface; and mirror-polishing the chamfered portion. The chamfered portion has a cross-sectional shape including: a first inclined portion continuous from the first main surface; a first arc portion continuous from the first inclined portion and having a radius of curvature; a second inclined portion continuous from the second main surface; a second arc portion continuous from the second inclined portion and having a radius of curvature; and an end portion connecting the first arc portion to the second arc portion. This provides a method for manufacturing a wafer by which a variation in a chamfered cross-sectional shape in a circumferential direction caused by etching can be suppressed. 14.-. (canceled)5. A method for manufacturing a wafer as a product , comprising the steps of:grinding and chamfering a circumferential edge portion of a wafer sliced from a single crystal ingot;lapping or double-side grinding main surfaces of the chamfered wafer;etching the lapped or double-side ground wafer;one-side or double-side mirror-polishing main surfaces of the etched wafer; andmirror-polishing a chamfered portion of the mirror-polished wafer, whereinafter the chamfering step, the chamfered portion of the wafer has a cross-sectional shape comprising:a first inclined portion continuous from a first main surface, which is one of the main surfaces of the wafer, and inclined from the first main surface;a first arc portion which is an arc-shaped portion continuous from the first inclined portion and has a radius of curvature;a second inclined portion continuous from a second main surface, which is another main surface of the wafer, and inclined from the second main surface;a second arc portion which is an arc-shaped portion continuous from the second inclined portion and ...

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Номер записи: 24
12-01-2017 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

Номер: US20170011903A1
Автор: KOBUCHI Syunya, KOZASA Kazuaki, SUGIMORI Katsuhisa
Принадлежит: SUMCO CORPORATION

A mirror-finishing chamfer polishing is applied using an abrasive-grain-free polishing solution to a chamfered portion of a semiconductor wafer having an oxide film on a top side or the top and bottom sides of the semiconductor wafer and having no oxide film on the chamfered portion. Further, prior to the mirror-finishing chamfer polishing, a pre-finish mirror chamfer polishing is applied using an abrasive-grain-containing polishing solution to the chamfered portion of the semiconductor wafer having the oxide film on the top side or the top and bottom sides and on the chamfered portion. 1. A manufacturing method of a semiconductor wafer comprising a top side , a bottom side , a chamfered portion and an oxide film , the oxide film being provided , on the top side or on the top and bottom sides and not provided on the chamfered portion , the method comprising:applying a mirror-finishing chamfer polishing to the chamfered portion using a abrasive-grain-free polishing solution.2. The manufacturing method of a semiconductor wafer according to claim 1 , further comprising:prior to the mirror-finishing chamfer polishing, applying a pre-finish mirror chamfer polishing to the chamfered portion of the semiconductor wafer comprising the oxide film on the top side or on the top and bottom sides and on the chamfered portion using an abrasive-grain-containing polishing solution.3. The manufacturing method of a semiconductor wafer according to claim 2 , whereinan unwoven fabric of less than 7% of a compression rate is used for a polishing pad used in the pre-finish mirror chamfer polishing, and suede of 6% or more of the compression rate is used for the polishing pad used in the mirror-finishing chamfer polishing.4. The manufacturing method of a semiconductor wafer according to claim 1 , whereinthe abrasive-grain-free polishing solution used in the mirror chamfer polishing comprises a polymer. The present invention relates to a manufacturing method of a semiconductor wafer. ...

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Номер записи: 25
03-02-2022 дата публикации

SKATE BLADE SHARPENING SYSTEM

Номер: US20220032419A1
Автор: Austin Brian, Beaudet Daniel A., Goryachev Ivan D., JR. Russell K., Layton
Принадлежит:

The present disclosure provides for a skate sharpening system comprising an operative unit and a base, the operative unit comprising a central body, the central body comprising a skate receiving slot, a skate clamp being positioned adjacent to the skate receiving slot such that a skate can be secured within the skate receiving slot for a sharpening operation, the operative unit further comprising a grinding unit, the grinding unit being configured to translate along a length of the slot such that the grinding unit can conduct the sharpening operation on the skate that is secured within the skate receiving slot, the operative unit being positioned over at least a portion of the base, the base comprising a swarf-receiving cavity, the operative unit and the base being pivotably connected. 1. A skate sharpening system comprising an operative unit and a base , the operative unit comprising a central body , the central body comprising a skate receiving slot , a skate clamp being positioned adjacent to the skate receiving slot such that a skate can be secured within the skate receiving slot for a sharpening operation , the operative unit further comprising a grinding unit , the grinding unit being configured to translate along a length of the slot such that the grinding unit can conduct the sharpening operation on the skate that is secured within the skate receiving slot , the operative unit being positioned over at least a portion of the base , the base comprising a swarf-receiving cavity , the operative unit and the base being pivotably connected.2. The skate sharpening system of claim 1 , wherein the base comprises a first side wall and a second side wall claim 1 , the operative unit being pivotably connected to the first and second side walls.3. The skate sharpening system of claim 1 , wherein the base comprises a bucket.4. The skate sharpening system of claim 3 , wherein the bucket has a height claim 3 , a width and a depth claim 3 , the width being greater than the ...

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Номер записи: 26
19-01-2017 дата публикации

METHOD FOR PREPARING LOW-WARPAGE SEMICONDUCTOR SUBSTRATE

Номер: US20170018454A1
Автор: CHEN Guoxing, Chen Meng, YE Fei
Принадлежит:

Disclosed is a method for preparing a low-warpage semiconductor substrate. The method includes: providing a first substrate and a second substrate, the first substrate including a first surface and a second surface which are opposite to each other, a first insulating layer is disposed on the first surface. A second insulating layer is disposed on the second surface. The second substrate includes a support layer, an oxidation layer arranged on a surface of the support layer, and a device layer arranged on a surface of the oxidation layer. The method further includes bonding the first substrate and the second substrate by using the device layer and the first insulating layer as an intermediate layer; and forming a passivation layer on a surface of the second insulating layer by means of adhesion, where the second insulating layer and the passivation layer are configured to adjust warpage of the semiconductor substrate. 1. A method for preparing a low-warpage semiconductor substrate , comprising:providing a first substrate and a second substrate, the first substrate comprising a first surface and a second surface which are opposite to each other, disposing a first insulating layer on the first surface, disposing a second insulating layer on the second surface, wherein the second substrate comprises a support layer, an oxidation layer arranged on a surface of the support layer, and a device layer arranged on a surface of the oxidation layer;bonding the first substrate and the second substrate by using the device layer and the first insulating layer as an intermediate layer;forming a passivation layer on a surface of the second insulating layer by means of adhesion, the second insulating layer and the passivation layer being configured to adjust warpage of the semiconductor substrate.2. The method for preparing the low-warpage semiconductor substrate according to claim 1 , wherein the passivation layer is a blue type claim 1 , and the first insulating layer and the ...

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Номер записи: 27
18-01-2018 дата публикации

SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

Номер: US20180019115A1
Автор: Chuang Chih-Yuan, Fan Chun-I, Hsu Wen-Ching, Shih Ying-Ru
Принадлежит: GlobalWafers Co., Ltd.

A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region. 1. A semiconductor substrate , comprising:an epitaxy region, located at a central portion of a main plane of the semiconductor substrate;a periphery region, surrounding the epitaxy region; andan injured region, distributed inside the periphery region.2. The semiconductor substrate as recited in claim 1 , wherein the main plane of the semiconductor substrate is surrounded by a bevel portion which is manufactured by a deformation process claim 1 , and the bevel portion is located in the periphery region.3. The semiconductor substrate as recited in claim 2 , wherein the injured region is located in an upper portion of the bevel portion.4. The semiconductor substrate as recited in claim 2 , wherein the injured region is located in the bevel portion.5. The semiconductor substrate as recited in claim 1 , wherein the injured region is located inside the semiconductor substrate and at a place relatively far away from a surface of the semiconductor substrate claim 1 , and the injured region is relatively far away from an outer edge of the semiconductor substrate.6. The semiconductor substrate as recited in any one of claim 1 , wherein a depth distribution range of the injured region extends downward from the surface of the semiconductor substrate to more than 3 micrometers (μm).7. The semiconductor substrate as recited in any one of claim 1 , wherein the periphery region comprises a tough region.8. The semiconductor substrate as recited in claim 5 , wherein a depth distribution range of the injured region extends downward from a place at a distance more than 2 μm from the surface of the semiconductor substrate.9. The semiconductor substrate as recited in claim 5 , ...

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Номер записи: 28
24-01-2019 дата публикации

AUTOMATIC WHEEL FRONT BURR REMOVING DEVICE

Номер: US20190022815A1
Автор: BI Xinyu, LIU Huiying, LU Yuexin
Принадлежит: CITIC Dicastal CO., LTD

Disclosed is an automatic wheel front burr removing device, including a station rotating motor, a station I manipulator, a station II manipulator, a station III manipulator, a station IV manipulator, a rim burr cutter head, a feeding slide plate I, guide posts I, cylinders I, a servo motor I, a feeding slide plate II, guide posts II, cylinders II, a servo motor II and a vision sensor. The station I is a wheel positioning and clamping station; the station II is a wheel rim burr removing station; the station III is a wheel cap section burr removing station; and the station IV is a wheel loosening and transferring station. 1. An automatic wheel front burr removing device , comprising a main frame , a secondary frame , a lifting cylinder , guide posts , a support plate , guide sleeves , guide rails , a left slide plate , positioning wheels , positioning posts , a gear rack structure , a lifting table , a right slide plate , a positioning cylinder , a support frame , a station rotating motor , a bearing seat , bearings , a shaft , a rotating platform , a station I manipulator , a station II manipulator , a station III manipulator , a station IV manipulator , clamping wheels , a rim burr cutter head , a feeding slide plate I , guide posts I , cylinders I , a servo motor I , a cap section burr cutter , a feeding slide plate II , guide posts II , cylinders II , a servo motor II and a vision sensor , wherein the device comprises four stations; station I is a wheel positioning and clamping station; station II is a wheel rim burr removing station; station III is a wheel cap section burr removing station; and station IV is a wheel loosening and transferring station.2. The automatic wheel front burr removing device of claim 1 , wherein four same manipulators are respectively the station I manipulator claim 1 , the station II manipulator claim 1 , the station III manipulator and the station IV manipulator claim 1 , and are fixedly mounted on the rotating platform claim 1 , and ...

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Номер записи: 29
24-01-2019 дата публикации

WHEEL FLANGE BURR BRUSHING DEVICE

Номер: US20190022817A1
Автор: LIU Huiying, Zhang Yacong
Принадлежит: CITIC Dicastal CO., LTD.

Disclosed is a wheel flange burr brushing device, comprising clamping roller motors, a right clamping cylinder, inner travel switches, a right feeding sliding plate, an upper rack, a gear, a lower rack, a feeding guide rail, belt pulleys, driving belts, rotating shaft supports, servo motors and the like. After feeding, a left clamping cylinder and a right clamping cylinder move synchronously first to clamp a wheel; next, the clamping roller motors are started to drive the wheel to rotate; then a lifting cylinder is started to drive a lifting platform to ascend, meanwhile, a feeding cylinder is started to drive a left feeding sliding plate and the right feeding sliding plate to reciprocate, and the servo motors are started to drive burr brushes to reverse cyclically; and the lifting cylinder stops moving when the burr brushes contact the flange face, the burr brushes begin brushing burrs. 1. A wheel flange burr brushing device , comprising a frame , a lifting cylinder , lifting guide rails , a lifting platform , a support , a feeding cylinder , outer travel switches , a left feeding sliding plate , a left clamping cylinder , clamping guide rails , a left clamping sliding plate , burr brushes , clamping rollers , a right clamping sliding plate , clamping roller motors , a right clamping cylinder , inner travel switches , a right feeding sliding plate , an upper rack , a gear , a lower rack , a feeding guide rail , belt pulleys , driving belts , rotating shaft supports and servo motors , wherein the feeding guide rail and the support are mounted on the lifting platform , the left feeding sliding plate and the right feeding sliding plate are mounted on the feeding guide rail and connected with each other via a gear rack structure , the feeding cylinder is mounted on the support , the output end of the feeding cylinder is connected with the left feeding sliding plate , and when the feeding cylinder drives the left feeding sliding plate to move left and right , the right ...

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Номер записи: 30
24-01-2019 дата публикации

WHEEL BLANK POSITIONING END FACE CORRECTION DEVICE

Номер: US20190022822A1
Автор: LIU Huiying, Liu Weidong, XUE Bowen
Принадлежит: CITIC Dicastal CO.,LTD

The present application disclose a wheel blank positioning end face correction device, comprising a frame, a servo motor I, a support frame, a bearing seat, a bearing, a shaft, a rotating platform, a guide rail, a cylinder, a left slide plate, a left bearing seat, a left shaft, a left bearing, a left driven grooved friction wheel, a left workbench, corner cylinder pressure claws, mandrel seats, mandrels, a grinding wheel, a grinding wheel drive motor, a support plate, a feeding slide plate, feeding guide rails, a linear motor, a distance measuring sensor, a fixed plate, a servo motor II, a driving grooved friction wheel, a right workbench, a right driven grooved friction wheel, a right shaft, a gear rack structure and a right slide plate. 1. A wheel blank positioning end face correction device , comprising a frame , a servo motor I , a support frame , bearing seats , bearings , a shaft , a rotating platform , a guide rail , a cylinder , a left slide plate , a left bearing seat , a left shaft , a left bearing , a left driven grooved friction wheel , a left workbench , corner cylinder pressure claws , mandrel seats , mandrels , a grinding wheel , a grinding wheel drive motor , a support plate , a feeding slide plate , feeding guide rails , a linear motor , a distance measuring sensor , a fixed plate , a servo motor II , a driving grooved friction wheel , a right workbench , a right driven grooved friction wheel , a right shaft , a gear rack structure and a right slide plate , wherein the rotating platform is provided with two stations comprising a correction station on the left and a detection station on the right , the guide rail is fixed on the rotating platform , the left slide plate and the right slide plate are respectively mounted on the guide rail , the left slide plate is connected with the right slide plate via the gear rack structure , the cylinder is mounted on the lateral vertical surface of one end of the rotating platform , and the output end of the ...

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Номер записи: 31
24-01-2019 дата публикации

WHEEL BLANK POSITIONING LIP CORRECTION DEVICE

Номер: US20190022823A1
Автор: LIU Huiying, LU Yuexin, YU Zhiyuan
Принадлежит: CITIC Dicastal CO., LTD

Disclosed is a wheel blank positioning lip correction device, comprising a frame, a gear rack structure, a guide rail I, a clamping system support plate, a servo motor I, a left slide plate, a clamping cylinder, a rotating shaft, rotating wheels, an end mill, guide posts, a servo motor II, an inner slide block, a guide rail II, a feeding slide plate, a linear motor II, a linear motor I, a servo motor III, a shaft, a grinding wheel, an outer slide block, a guide rail III, a linear motor III, a lifting table, a right slide plate, a lifting guide rail, a motor support plate and a lifting linear motor. 1. A wheel blank positioning lip correction device , comprising a frame , a gear rack structure , a guide rail I , a clamping system support plate , a servo motor I , a left slide plate , a clamping cylinder , a rotating shaft , rotating wheels , an end mill , guide posts , a servo motor II , an inner slide block , a guide rail II , a feeding slide plate , a linear motor II , a linear motor I , a servo motor III , a shaft , a grinding wheel , an outer slide block , a guide rail III , a linear motor III , a lifting table , a right slide plate , a lifting guide rail , a motor support plate and a lifting linear motor , wherein the four guide posts are fixed at the top of the frame , the linear motor I is mounted at the upper part of the frame , an output end of the linear motor I is connected with the feeding slide plate , the linear motor I controls lifting of the feeding slide plate under the guiding effect of the guide posts , the guide rail II and the linear motor II are fixed on the feeding slide plate , the inner slide block is mounted on the guide rail II , and an output end of the linear motor II is connected with the inner slide block and is configured to control motion of the inner slide block in the horizontal direction; the servo motor II is mounted on the inner slide block , the end mill is mounted at an output end of the servo motor II , and the end mill is ...

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Номер записи: 32
23-01-2020 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20200023486A1
Автор: Kashiwagi Makoto, NAKANISHI Masayuki, SEKI Masaya
Принадлежит:

A polishing apparatus capable of forming a step-shaped recess having a right-angled cross section in an edge portion of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a substrate rotating device configured to rotate the substrate about a rotation axis; a first roller having a first circumferential surface configured to press a polishing tape against the edge portion of the substrate; and a second roller having a second circumferential surface in contact with the first circumferential surface. The second roller has a tape stopper surface that restricts movement of the polishing tape in a direction away from the rotation axis. The tape stopper surface is located radially outward of the first circumferential surface. 1. A polishing apparatus for forming a step-shaped recess in an edge portion of a substrate , comprising:a substrate rotating device configured to rotate the substrate about a rotation axis;a first roller having a first circumferential surface configured to press a polishing tape against the edge portion of the substrate; anda second roller having a second circumferential surface in contact with the first circumferential surface, the second roller having a tape stopper surface that restricts movement of the polishing tape in a direction away from the rotation axis, the tape stopper surface being located radially outward of the first circumferential surface.2. The polishing apparatus according to claim 1 , wherein the first roller and the second roller are rotatable about a first axis and a second axis claim 1 , respectively claim 1 , extending toward the rotation axis.3. The polishing apparatus according to claim 1 , further comprising a third roller concentrically fixed to the second roller claim 1 , the third roller having a third circumferential surface with a diameter smaller than a diameter of the second circumferential surface claim 1 , the tape stopper surface being connected to the third circumferential surface.4. The ...

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Номер записи: 33
23-01-2020 дата публикации

POLISHING APPARATUS AND POLISHING METHOD FOR POLISHING A PERIPHERY OF A SUBSTRATE

Номер: US20200023490A1
Автор: Kodera Kenji, NAKANISHI Masayuki
Принадлежит:

A polishing apparatus capable of accurately detecting a polishing end point of a periphery of a substrate, such as a wafer, is disclosed. The polishing apparatus includes a polishing head configured to press a polishing tool against the periphery of the substrate on a substrate holding surface. The polishing head includes a pressing member configured to press the polishing tool against the periphery of the substrate, and a shear-force detection sensor configured to detect a shear force acting on the pressing member and output an index value indicating a magnitude of the shear force. An operation controller has a memory storing a program configured to determine a polishing end point at which the index value reaches a threshold value, and a processer configured to execute the program. 1. A polishing apparatus for polishing a periphery of a substrate , comprising:a substrate holder having a substrate holding surface for holding the substrate, the substrate holder being configured to rotate the substrate holding surface;a polishing head configured to press a polishing tool against the periphery of the substrate on the substrate holding surface; andan operation controller configured to control operations of the substrate holder and the polishing head, a pressing member configured to press the polishing tool against the periphery of the substrate; and', 'a shear-force detection sensor configured to detect a shear force acting on the pressing member due to a frictional resistance between the polishing tool and the periphery of the substrate, the shear-force detection sensor being configured to output an index value indicating a magnitude of the shear force, and, 'wherein the polishing head compriseswherein the operation controller comprises a memory storing a program configured to determine a polishing end point at which the index value reaches a threshold value, and a processer configured to execute the program.2. The polishing apparatus according to claim 1 , wherein the ...

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Номер записи: 34
01-02-2018 дата публикации

Methods of Measuring and Grinding an Ice Blade, and Apparatuses Using Same

Номер: US20180028898A1
Автор: Chan Nathan, Di Pietro Emidio, Di Pietro Tony, Gonzalez Jamie A., Martin Steve
Принадлежит: Skatescribe Corporation

An automated apparatus for grinding an ice blade on an ice skate comprises a processor, an input device in communication with said processor, a skate holder, a non-contact measuring device in communication with said processor, and a grinding device in communication with said processor. The input device permits a user to select an ice blade grinding option. The skate holder releasably holds at least one said ice skate to said apparatus. The non-contact measuring device is configured to measure a three-dimensional (3D) shape of said ice blade. The grinding device is configured to perform a grinding action on said ice blade in said holder based on said selected ice blade grinding option to change said 3D shape of said ice blade to a desired 3D shape. 1. An automated apparatus for grinding an ice blade on an ice skate , said apparatus comprising:a processor;an input device in communication with said processor to permit a user to select an ice blade grinding option;a skate holder configured to releasably hold at least one said ice skate to said apparatus;a non-contact measuring device in communication with said processor, said non-contact measuring device being configured to measure a three-dimensional (3D) shape of said ice blade when said at least one ice skate is held by said skate holder; anda grinding device in communication with said processor, said grinding device being configured to perform a grinding action on said ice blade in said holder based on said selected ice blade grinding option to change said 3D shape of said ice blade to a desired 3D shape, said processor configured to determine whether said ice blade is unsuitable for said selected ice blade grinding option based on said measured 3D shape of said ice blade prior to said grinding device performing said grinding action on said ice blade.2. The automated apparatus according to claim 1 , wherein said grinding action removes material from said skate blade to change a shape of an ice contacting surface of ...

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Номер записи: 35
28-01-2021 дата публикации

WAFER STRUCTURE AND TRIMMING METHOD THEREOF

Номер: US20210028005A1
Автор: Chiang Hao-Ning, Chuang Ming-Te
Принадлежит: Taiwan Semiconductor Manufacturing Company, Ltd.

A wafer structure and a trimming method thereof are provided. The trimming method includes the following steps. A first wafer having a first surface and a second surface opposite to the first surface is provided. A first pre-trimming mark is formed on the first surface of the first wafer, where forming the first pre-trimming mark includes forming a plurality of recesses arranged as a path along a periphery of the first wafer. The first wafer is trimmed on the first pre-trimming mark and along the path of the first pre-trimming mark to remove a portion of the first wafer and form a trimmed edge having first regions thereon. 1. A trimming method , comprising:providing a first wafer having a first surface and a second surface opposite to the first surface;forming a first pre-trimming mark on the first surface of the first wafer, wherein forming the first pre-trimming mark comprises forming a plurality of recesses arranged as a path along a periphery of the first wafer; andtrimming the first wafer on the first pre-trimming mark and along the path of the first pre-trimming mark to remove a portion of the first wafer and form a trimmed edge having first regions thereon.2. The trimming method according to claim 1 , wherein forming the first pre-trimming mark on the first surface of the first wafer comprises:performing an etching process to the first surface of the first wafer to form the first pre-trimming mark, wherein the first regions comprise etching streaks.3. The trimming method according to claim 1 , wherein forming the first pre-trimming mark on the first surface of the first wafer comprises:performing a laser marking process to the first surface of the first wafer to form the first pre-trimming mark, wherein the first regions comprise laser marking streaks.4. The trimming method according to claim 1 , wherein trimming the first wafer comprises:cutting into the first wafer and cutting through the first pre-trimming mark to a trimming depth, wherein the trimming ...

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Номер записи: 36
07-02-2019 дата публикации

POLISHING APPARATUS

Номер: US20190038957A1
Автор: Cocker Robin Craig, HISTED Jonathan Rosser, MUTTI Paul Christopher Edward
Принадлежит:

The invention relates to apparatus for polishing a running base that comprises a blade with two opposing blade edges separated one from the other by an intermediate section; the polishing apparatus comprising: a support body, and blade alignment guide means; wherein the support body is capable of carrying a polishing surface which comprises: a profile which is adapted to conform with one or more portions of the intermediate section; and wherein the blade alignment guide means comprise one or more pairs of first and second blade alignment guides, which first and second blade alignment guides in each pair are separated from each other by the polishing surface, and further wherein the blade alignment guide means is adapted to receive and/or guide and/or constrain a running base so that when the intermediate section between the two edges of the running base is brought into contact with the polishing surface, there is no contact between the polishing surface and any part of the two opposing blade edges of the running base. 1. Polishing apparatus for treating a running base that comprises a blade with two opposing blade edges which are separated one from the other by an intermediate section , the polishing apparatus comprising:a body housing comprising at least a first and a second opposing side wall and a third base wall which extends between and links the first opposing side wall to the second opposing side wall,wherein the first and second opposing side walls and the base wall each comprise an inside surface which inside surfaces cooperate to form the inside of the body housing, and an outside surface which outside surfaces cooperate to form the outside of the body housing;an elongate slot formed in the base wall of the body housing, wherein the elongate slot extends between and through the first and second opposing side walls;a support body capable of carrying polishing material; andan alignment system for facilitating alignment of the polishing surface with the ...

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Номер записи: 37
07-02-2019 дата публикации

Pipeline Weld Finishing System And Process

Номер: US20190039199A1
Автор: SMITH STEVE, Webb Derek, Webb Stanley
Принадлежит:

Various embodiments relate to a blasting ring for blasting a weld on a pipe, including: a ring structure with a first pivot point and a latch, wherein the first pivot point allows the ring structure to open and close around the pipe and the latch is configured to secure the ring to the pipe; a plurality of rollers attached to the ring structure configured to engage the pipe; a cleaner brush attached to the ring structure configured to rotate and engage the weld on the pipe to clean the weld; and a profile brush attached to the ring structure configured to rotate and engage the weld on the pipe to profile the weld. Further, the blasting ring and a heating ring may be used to finish the weld on a pipe. 1. A blasting ring for blasting a weld on a pipe , comprising:a ring structure with a first pivot point and a latch, wherein the first pivot point allows the ring structure to open and close around the pipe and the latch is configured to secure the ring to the pipe;a plurality of rollers attached to the ring structure configured to engage the pipe;a cleaner brush attached to the ring structure configured to rotate and engage the weld on the pipe to clean the weld; anda profile brush attached to the ring structure configured to rotate and engage the weld on the pipe to profile the weld.2. The blaster ring of claim 1 , further comprising:a first motor coupled to the cleaner brush configured to rotate the cleaner brush; anda second motor coupled to the profile brush configured to rotate the profile brush.3. The blaster ring of claim 2 , wherein the first motor and the second motor are air-powered motors.4. The blaster ring of claim 2 , further comprising:a first brush drive mechanism between the first motor and the cleaner bush; anda second brush drive mechanism between the second motor and the profile bush.5. The blaster ring of claim 1 , further comprising a brush adjustment mechanism configured to adjust the position of one the cleaner bush and profile brush relative to ...

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Номер записи: 38
12-02-2015 дата публикации

METHOD FOR THE MULTI-STAGE GRINDING OF WORKPIECES, AND VACUUM TABLE, STORAGE CONTAINER, STRIPPING DEVICE AND PLANT FOR CARRYING OUT THE METHOD

Номер: US20150044948A1
Автор: Kottbus Frank, Müller Knut
Принадлежит:

The invention relates to a method for the multi-stage grinding of workpieces () made of hard mineral materials using a robot (). To this end, the workpiece () is moved into a processing region () and measured and/or oriented there by the robot (). The robot () comprises a grinding head () by way of which it then takes up a first abrasive () preferably from a storage container () and starts a first grinding process. After the first grinding process is complete, the robot () releases the first abrasive () again and then takes up a second abrasive (), preferably from the same or some other storage container (). Then the robot () starts a second grinding process, and after the latter is complete, releases the second abrasive () again. One or more further grinding processes may be provided, but the grinding method can also be finished after the second grinding process. If further grinding processes are provided, the robot () first of all takes up the respective abrasive (), carries out the grinding process and releases the abrasive () again. After the final grinding process is complete, the workpiece () is removed from the processing region (). Furthermore, the invention also comprises a plant () for carrying out the method and a stripping device (), a storage container () and a vacuum table (), by means of which the method can be carried out. 120-. (canceled)21. Method for multi-step grinding of workpieces made of hard mineral materials , using a robot comprising the steps of:bringing the workpiece into a processing area and is measured and/or aligned there by the robot;wherein the robot has a grinding head, with which it then takes up a first grinding means preferably from a storage container and begins a first grinding process;wherein after the first grinding process is ended the robot releases the first grinding means;and the robot then takes up a second grinding means preferably from the same or a different storage container andstarts a second grinding process and ...

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Номер записи: 39
06-02-2020 дата публикации

Chemical mechanical polishing apparatus

Номер: US20200043746A1
Автор: Ren-Hao JHENG, Yu-Ping TSENG
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The present disclosure provides an apparatus and a method for polishing a semiconductor substrate in semiconductor device manufacturing. The apparatus can include: a carrier configured to hold the substrate; a polishing pad configured to polish a first surface of the substrate; a chemical mechanical polishing (CMP) slurry delivery arm configured to dispense a CMP slurry onto the first surface of the substrate; and a pad conditioner configured to condition the polishing pad. In some embodiments, the pad conditioner can include: a conditioning disk configured to scratch the polishing pad; a conditioning arm configured to rotate the conditioning disk; a plurality of magnetic screws configured to secure the conditioning disk onto the conditioning arm and including a respective plurality of screw heads; and a plurality of blocking devices respectively positioned beneath the plurality of screw heads and configured to block debris particles from entering a respective plurality of screw holes.

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Номер записи: 40
25-02-2016 дата публикации

RECTANGULAR SUBSTRATE FOR IMPRINT LITHOGRAPHY AND MAKING METHOD

Номер: US20160052193A1
Автор: Ando Masao, Okafuji Daiyu, Takeuchi Masaki, Yamazaki Hiroyuki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A rectangular substrate is prepared by providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, and pressing a rotary polishing pad perpendicularly against one side surface under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate. In the imprint lithography, the rectangular substrate is capable of controlling compression and pattern shape at a high accuracy and thus transferring a complex pattern of fine feature size to a recipient. 1. A method for preparing a rectangular substrate for use in imprint lithography , comprising the steps of:providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, andpressing a rotary polishing pad perpendicularly against one side surface of the substrate under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate.2. The method of wherein the moving speed of the relative parallel movement of the rotary polishing pad and the substrate is changed in accordance with a position on the substrate side surface being polished.3. The method of wherein the side surface of the substrate includes a longitudinal central region and longitudinal edge regions claim 2 ,the moving speed of the relative parallel movement of the rotary polishing pad and the substrate is faster when the center of the rotary polishing pad is positioned at the longitudinal edge region of the substrate side surface than when the center of the rotary polishing pad is positioned at the longitudinal central region of the substrate side surface.4. The method of wherein the moving speed of the relative parallel movement is changed in accordance with protrusions and recessions on the substrate side surface.5. The method of wherein the moving speed ...

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Номер записи: 41
08-05-2014 дата публикации

POLISHING DEVICE

Номер: US20140127979A1
Автор: SU RONG-CHUN
Принадлежит:

A polishing device is disclosed. The polishing device includes a load seat and two polishing mechanisms mounted on the load seat. Each polishing mechanism includes a driving member and a polishing member driven by the driving member. The two polishing members of the two polishing mechanisms are oppositely received in the receiving space, and oppositely rotatable driven by the corresponding driving member. The polishing members are rotated oppositely, such that the new burs generated by one of the polishing members can be removed by other one of the polishing members at the same time. 1. A polishing device , comprising:a load seat comprising two support members spaced apart from each other, the two support members cooperatively forming a receiving space; a driving member mounted on one of the two support members, and', 'a polishing member driven by the driving member; and, 'two polishing mechanisms mounted on the load seat, each of the two polishing mechanisms comprisinga controller electrically connected to two driving members of the two polishing mechanisms to control the two polishing mechanisms, wherein two polishing members of the two polishing mechanisms are oppositely received in the receiving space, and the two polishing members are oppositely rotatable driven by the driving members.2. The polishing device of claim 1 , wherein the polishing member comprises a base body and a plurality of polishing pins claim 1 , the base body is securely connected to the driving member claim 1 , and the plurality of polishing pins is placed on a periphery of the base body and spaced apart from each other.3. The polishing device of claim 2 , wherein the plurality of polishing pins cooperatively forms a polishing surface away from the base body.4. The polishing device of claim 1 , wherein the driving member comprises a main body and a driving shaft connected to the main body claim 1 , the main body is securely mounted on the one of the support members claim 1 , and is ...

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Номер записи: 42
05-03-2015 дата публикации

Method of Controlled Crack Propagation for Material Cleavage using Electromagnetic Forces

Номер: US20150060509A1
Автор: Iancu Andrei T., Prinz Friedrich B.
Принадлежит:

To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material. 1. A method of cleaving substrate material , comprising:a. forming an initial crack in a bulk substrate material, wherein said crack is aligned along a cleaving plane of said bulk substrate material;b. aligning said cleaving plane between two parallel electrodes in a controlled environment, wherein said parallel electrodes comprise a top electrode and a bottom electrode, wherein said cleaving plane is parallel with said two parallel electrodes, wherein a bottom portion of said bulk substrate material is physically and electrically connected to said bottom electrode; andc. applying a voltage across said two parallel electrodes, wherein said voltage is at least 50 kV, wherein said voltage establishes a uniform electromagnetic force on said top surface of said bulk substrate material, wherein said electromagnetic force is capable of inducing crack propagation along said cleaving plane and separating a cleaved substrate material from said bulk substrate material.2. The method according to claim 1 , wherein forming said initial crack ...

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Номер записи: 43
21-02-2019 дата публикации

POLISHING METHOD AND POLISHING APPARATUS

Номер: US20190054589A1
Автор: Hoshina Manao, SEKI Masaya
Принадлежит: EBARA CORPORATION

The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a wafer, and more particularly to a polishing apparatus and a polishing method for polishing an edge portion of a wafer with use of a polishing tape. 18.-. (canceled)9. A polishing apparatus comprising:a substrate holder having a substrate-holding surface, the substrate holder being configured to hold a substrate with the substrate-holding surface and to rotate the substrate; anda polishing unit configured to polish an edge portion of the substrate with use of a polishing tape, a disk head having a circumferential surface for supporting the polishing tape, the disk head having a central axis which is parallel to the substrate-holding surface and is perpendicular to a tangential direction of the substrate; and', 'an elevating mechanism configured to elevate and lower the disk head., 'the polishing unit including10. The polishing apparatus according to claim 9 , wherein the polishing unit further includes:a base supporting the disk head;a horizontal linear guide extending parallel to the tangential direction of the substrate, the base being movably supported by the linear guide, the disk head being movable together with the base.11. The polishing apparatus according to claim 10 , wherein the elevating mechanism includes:an elevation table supporting the horizontal linear guide; andan elevating actuator configured to elevate and lower the elevation table.12. The polishing apparatus according to claim 11 , wherein the elevating actuator includes:a ball screw rotatably coupled to the elevation table; anda servomotor coupled to the ball screw.13. The polishing apparatus according to claim 11 , wherein the elevating mechanism further includes a vertical linear guide configured to restrict movement of the elevation table to a vertical direction claim 11 , the elevation table being coupled to the vertical linear guide.14. The polishing apparatus according to claim ...

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Номер записи: 44
15-05-2014 дата публикации

HINGE MECHANISM FOR SMALL OPTICS AND RELATED METHODS

Номер: US20140134928A1
Автор: Theriault Philip Christopher
Принадлежит: Raytheon Company

A hinge assembly for a deployable minor includes a base, a mirror segment base coupled to the base, a minor segment coupled to the minor segment base by two bearings, and at least one linear actuator secured to the base and capable of adjusting the mirror segment. Other embodiments of the hinge assembly are further disclosed. 1. A method of fabricating bearing seats for a hinge assembly of a movable optical assembly , the method comprising:providing a first body of the hinge assembly having a first surface;positioning a first bearing on the first surface of the first body; andgrinding a first bearing seat with the first bearing so that a profile for the first bearing seat matches an outer surface of the first bearing.2. The method of claim 1 , further comprising:providing a second body of the hinge assembly having a second surface;positioning the first bearing on the second surface of the second body; andgrinding a second bearing seat with the first bearing so that a profile for the second bearing seat matches an outer surface of the first bearing.3. The method of claim 2 , wherein positioning the first bearing on at least one of the first surface of the first body and the second surface of the second body includes boring a hole within the body and seating the first bearing within the hole.4. The method of claim 2 , wherein the first surface of the first body faces the second surface of the second body.5. The method of claim 2 , further comprising:positioning a second bearing on a third surface of the first body; andgrinding a third bearing seat with the second bearing so that a profile for the third bearing seat matches an outer surface of the second bearing.6. The method of claim 5 , further comprising:positioning the second bearing on a fourth surface of the second body; andgrinding a fourth bearing seat with the second bearing so that a profile for the fourth bearing seat matches an outer surface of the second bearing.7. The method of claim 6 , wherein each ...

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Номер записи: 45
12-03-2015 дата публикации

SHARPENING TOOL, SHARPENING SYSTEM AND KIT

Номер: US20150072602A1
Автор: Welch Glenn S.
Принадлежит:

The present invention is a sharpening tool and sharpening system for sharpening snowmobile carbide wear rails and studs and a kit of parts that includes the sharpening tool and a steering member having a carbide wear rail. The sharpening tool is attachable to the chuck of a hand held drill and includes a shaft attachable to the chuck of the hand held drill and cylindrical head affixed to the shaft. The cylindrical head includes a rail groove surfaced in an abrasive material for sharpening wear rails. 1. A sharpening tool capable of sharpening studs , said sharpening tool comprising:a shaft dimensioned for attachment to a rotating power tool; and a top face;', 'a bottom face, wherein said shaft extends from a center of said bottom face;', 'a round body extending between said top face and said bottom face; and', a circular wide opening in said top face comprising a wide opening diameter;', 'a circular narrow substantially flat center comprising a narrow center diameter, wherein said narrow center diameter is less than said wide opening diameter;', 'angled sides connecting said wide opening and said narrow center; and', 'a first abrasive material disposed upon each of said angled sides., 'a stud groove cut into said top face of said cylindrical head comprising], 'a substantially cylindrical head extending from said shaft, said head comprising2. The sharpening tool as claimed in claim 1 , wherein said first abrasive material is a diamond material.3. The sharpening tool as claimed in claim 1 , further comprising:at least one rail groove extending into said round body around a circumference of said round body between said top face and said bottom face such that said at least one rail groove runs parallel to a circumference of said top face and a circumference of said bottom face, wherein said rail groove comprises:a rectangular unobstructed center space comprising two sides, a flat bottom, and an opening;center sections flaring outward from either of said two sides of ...

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Номер записи: 46
27-02-2020 дата публикации

Method and apparatus for manufacturing semiconductor device

Номер: US20200066507A1
Автор: Eiichi Yamamoto, Takahiko Mitsui, Tsubasa Bando
Принадлежит: Okamoto Machine Tool Works Ltd

A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

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Номер записи: 47
27-02-2020 дата публикации

Substrate processing device, substrate processing method, and storage medium storing program for causing computer to execute method for controlling substrate processing device

Номер: US20200066510A1
Автор: Satoru Yamamoto, Yu Machida
Принадлежит: Ebara Corp

There is provided a substrate processing device. This substrate processing device includes a substrate holder that holds and rotates a substrate, a first processing head that processes a first plane of the substrate held on the substrate holder, and a second processing head that processes a peripheral portion of the substrate held on the substrate holder.

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Номер записи: 48
15-03-2018 дата публикации

Online aluminum wheel burr removing machine

Номер: US20180071828A1
Автор: Fanbo MENG, Fuqiang Li, Guoxin Xiao, Lijie SONG, Shaojiang WANG, Shuangyong Liu, Xu HOU, Yan Sun, Yanchao Ren, Yonggang Zhao
Принадлежит: Qinhuangdao Xinyue Intelligent Equipment Co ltd

The present invention provides an online aluminum wheel burr removing machine which includes a roller bed device ( 1 ), a positioning and rotating device ( 2 ) and a knife box device ( 3 ). A wheel ( 4 ) is conveyed to a specified position by the roller bed device ( 1 ), the positioning and rotating mechanism ( 2 ) clamps and rotates the wheel ( 4 ), the knife box device ( 3 ) horizontally feeds to cut burrs of the wheel ( 4 ), the roller bed device ( 1 ) conveys the wheel to next station, meanwhile, next wheel enters the roller bed device ( 1 ), and next cutting cycle is carried out. The machining time of the present invention is 25-30 seconds, so that the manpower cost is reduced, the machining efficiency is improved, and positive effects are achieved in hub burr removal.

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Номер записи: 49
16-03-2017 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20170072528A1
Автор: Kusa Hiroaki, NAKANISHI Masayuki, SEKI Masaya, TAKAHASHI Tamami, YAMAGUCHI Kenji
Принадлежит:

A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position. 136-. (canceled)37. A polishing apparatus for polishing a notch portion of a substrate , the apparatus comprising:a rotary holding mechanism configured to hold the substrate and rotate the substrate;a polishing head configured to bring a polishing tape into sliding contact with the notch portion of the substrate to polish the notch portion;a tape supplying and recovering mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head;a tension sensor configured to measure a tension of the polishing tape; anda monitoring unit configured to monitor the tension of the polishing tape based on an output signal of the tension sensor.38. The polishing apparatus according to claim 37 , wherein the monitoring unit is configured to determine whether the tension of the polishing tape exceeds a predetermined threshold.39. The polishing apparatus according to claim 37 , wherein the rotary holding mechanism includes a swinging mechanism configured to cause the substrate to perform swinging motion claim 37 , centered on the notch portion claim 37 , in a plane parallel to a surface of the ...

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Номер записи: 50
16-03-2017 дата публикации

REVERSING MACHINE AND SUBSTRATE POLISHING APPARATUS

Номер: US20170072531A1
Автор: Akazawa Kenichi, Hoshina Manao, Kobayashi Kenichi, Yazawa Akihiro
Принадлежит:

Disclosed is a reversing machine that reverses a substrate upside down. The reversing machine includes: a first arm pair configured to mount a substrate thereon; a second arm pair facing the first arm pair; an opening/closing mechanism configured to open/close the second arm pair so as to grip the substrate mounted on the first arm pair; and a rotating mechanism configured to rotate the first arm pair and the second arm pair around a predetermined axis that is set inside the first arm pair and the second arm pair and extends along an extension direction of the first arm pair and the second arm pair such that the substrate is reversed upside down. 1. A reversing machine that reverses a substrate upside down , the reversing machine comprising:a first arm pair configured to mount a substrate thereon;a second arm pair facing the first arm pair;an opening/closing mechanism configured to open/close the second arm pair so as to grip the substrate mounted on the first arm pair; anda rotating mechanism configured to rotate the first arm pair and the second arm pair around a predetermined axis that is set inside the first arm pair and the second arm pair and extends along an extension direction of the first arm pair and the second arm pair such that the substrate is reversed upside down.2. The reversing machine of claim 1 , wherein the predetermined axis is a symmetric axis of the first arm pair and the second arm pair.3. A reversing machine that reverses a substrate upside down claim 1 , the reversing machine comprising:a first arm pair configured to mount a substrate thereon;a second arm pair facing the first arm pair, and configured to be opened/closed so as to grip the substrate mounted on the first arm pair; anda rotating mechanism configured to rotate the first arm pair and the second arm pair so as to reverse the substrate upside down such that a position of the substrate before the substrate is reversed upside down and a position of the substrate after the substrate ...

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Номер записи: 51
05-03-2020 дата публикации

GRINDING METHOD AND OGS SUBSTRATE

Номер: US20200070304A1
Автор: Fan Wenjin, Wang Qingpu, WANG Zuliang, ZHANG Binbin, ZHANG LEI, ZHU Wenlong
Принадлежит:

An OGS substrate and a grinding method thereof are provided. The OGS substrate includes a base substrate, wherein a shielding pattern is formed inside a periphery region of the base substrate, a reference mark is formed above the shielding pattern, the grinding method comprises: grinding an edge of the base substrate to form a chamfer; identifying edges of the reference mark and the base substrate; calculating a position distance between an outer edge of the reference mark and the edge of the base substrate corresponding thereto based on the identified edges of the reference mark and the base substrate; judging whether the position distance is smaller than a first distance; if it is judged that the position distance is smaller than the first distance, stopping grinding; otherwise, continuing to grind. 1. An OGS substrate comprising:a base substrate including a central region and a periphery region;a touch structure formed in the central region;a shielding pattern formed in the periphery region; anda reference mark formed above the shielding pattern, whereina color of the reference mark is different from that of the shielding pattern;an orthographic projection of the reference mark on the base substrate falls into an orthographic projection of the shielding pattern on the base substrate;a chamfer is formed at an edge of the base substrate; anda position distance between an outer edge of the reference mark and the edge of the base substrate corresponding to the outer edge of the reference mark is within a first range.2. The OGS substrate of claim 1 , wherein a width of the reference mark ranges from 100 μm to 200 μm.3. The OGS substrate of claim 1 , wherein a color of the shielding pattern is black claim 1 , and a color of the reference mark is white.4. The OGS substrate of claim 1 , wherein the reference mark is of a multilayer structure of MoAlMo.5. The OGS substrate of claim 1 , wherein the touch structure includes a touch electrode and a metal wire connected to ...

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Номер записи: 52
07-03-2019 дата публикации

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20190074171A1
Автор: HARADA Tomonori, Koide Tatsuhiko, SATO Katsuhiro
Принадлежит: Toshiba Memory Corporation

In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion. 1. A semiconductor manufacturing apparatus comprising:a supporter configured to support a wafer;a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion;a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion;a first liquid feeder configured to feed a first liquid for processing the wafer to the first region;a first gas feeder configured to feed a first gas between the wafer and the first portion; anda second gas feeder configured to feed a second gas between the wafer and the second portion.2. The apparatus of claim 1 , wherein the first region is positioned on a side of a center portion of the wafer claim 1 , and the second region is positioned on a side of a periphery portion of the wafer.3. The apparatus of claim 1 , wherein the first and third portions have annular shapes claim 1 , and the second and fourth portions have cylindrical shapes.4. The apparatus of claim 1 , further comprising a ...

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Номер записи: 53
05-03-2020 дата публикации

Apparatus for processing a ferrule and associated method

Номер: US20200073058A1
Автор: Cameron John TOVEY
Принадлежит: Corning Inc

An apparatus for processing a ferrule with an abrasive element. The apparatus includes a first mount to which the ferrule is secured, a second mount to which the abrasive element is secured, and a controller operatively coupled to at least the second mount. The second mount includes a spindle o which the abrasive element is coupled, with the spindle having a central axis about which the spindle is configured to rotate. At least one of the first or second mounts is movable within a plane such that when the ferrule and the abrasive element are brought into contact with each other, the apparatus provides three degrees of freedom of movement for processing the ferrule with the abrasive element. A method of using the apparatus to process a ferrule is also disclosed.

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Номер записи: 54
22-03-2018 дата публикации

RECTANGULAR SUBSTRATE FOR IMPRINT LITHOGRAPHY AND MAKING METHOD

Номер: US20180079130A1
Автор: Ando Masao, Okafuji Daiyu, Takeuchi Masaki, Yamazaki Hiroyuki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A rectangular substrate is prepared by providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, and pressing a rotary polishing pad perpendicularly against one side surface under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate. In the imprint lithography, the rectangular substrate is capable of controlling compression and pattern shape at a high accuracy and thus transferring a complex pattern of fine feature size to a recipient. 1. A rectangular substrate for use in imprint lithography , the substrate having front and back surfaces and four side surfaces , the front surface being engraved with a pattern of protrusions and recessions , and the side surfaces having a flatness of up to 20 μm.2. The rectangular substrate of wherein the angle included between adjoining side surfaces is in a range of 90±0.1°.3. The rectangular substrate of wherein the side surfaces are mirror finished.4. The rectangular substrate of wherein the side surfaces have a surface roughness Ra of 0.01 to 2 nm.5. The rectangular substrate of wherein the back surface is provided with a recess or channel. This application is a divisional of U.S. application Ser. No. 14/828,573 filed on Aug. 18, 2015, which is based upon and claims the benefit of priority of the prior 35 U.S.C. § 119(a) on Patent Application No. 2014-166352 filed in Japan on Aug. 19, 2014, the entire contents of which are hereby incorporated by reference.This invention relates to a rectangular substrate which is suited for use in the imprint lithography, especially nanoimprint lithography (NIL) and serves as a template for forming a topographic pattern on a surface in the process of fabricating electronic devices, optical components, storage components, bioelectronic components and the like, and a method for preparing the rectangular substrate.BACKGROUND ARTIn ...

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Номер записи: 55
31-03-2022 дата публикации

POLISHING MECHANISM, POLISHING DEVICE, AND POLISHING METHOD

Номер: US20220097204A1
Автор: Chang Han-Chieh, LI HAI-JUN, LONG BO, XU Xiao-Ming, YANG YUAN-KUN, ZHONG CHUN-MING
Принадлежит:

A polishing system for polishing a workpiece includes a sensor group detecting pressure information of the workpiece and generating a pressure sequence; a processor coupled to the sensor group and configured to: receive the pressure sequence; generate indication information including a predetermined track of a polishing head to polish the workpiece; based on the pressure sequence and the indication information, generate a deviation sequence of the pressure sequence; and based on the deviation sequence, generate an adjustment instruction, to adjust a position of the polishing head. A polishing method, an assistant polishing device, an assistant polishing system, and an assistant polishing method are also disclosed. 1. A polishing system configured to polish a workpiece , the polishing system comprising:a sensor group configured to detect pressure information of the workpiece and generate a pressure sequence;{'claim-text': ['receive the pressure sequence;', 'generate indication information, wherein the indication information is configured to indicate a polishing head polishing the workpiece at a predetermined track;', 'based on the pressure sequence and the indication information, generate a deviation sequence of the pressure sequence; and', 'based on the deviation sequence, generate an adjustment instruction, wherein the adjustment instruction is configured to adjust a position of the polishing head to polish the workpiece.'], '#text': 'a processor coupled to the sensor group and configured to:'}2. The polishing system according to claim 1 , wherein the indication information further comprises a preset position and a conversion relationship claim 1 , wherein the preset position is a calculable position of the polish head relative to polish the workpiece claim 1 , and the conversion relationship is a conversion formula of a relationship between pressures generated by the polish head and deformation information of polish material of the polish head claim 1 , the ...

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Номер записи: 56
26-03-2015 дата публикации

POLISHING APPARATUS

Номер: US20150087210A1
Автор: Jung Ki-Hong, KIM Soo-Young, Lee Sung-Choul, Park Choul-Gue
Принадлежит:

A polishing apparatus including a chuck for supporting a wafer while exposing a peripheral portion of the wafer, a polishing head for polishing the peripheral portion of the wafer, and a polishing solution supplying assembly provided above the chuck and configured to spray a polishing solution on the wafer and to form a liquid curtain on the chuck to protect the wafer when the wafer is polished may be provided. 1. A polishing apparatus , comprising:a chuck for supporting a wafer while exposing a peripheral portion of the wafer;a polishing head for polishing the peripheral portion of the wafer; anda polishing solution supplying assembly above the chuck, the polishing solution supplying assembly for spraying a polishing solution on the wafer and to form a liquid curtain on the chuck.2. The polishing apparatus of claim 1 , wherein the polishing head has a side surface and a top surface polishing portion claim 1 , the top surface and the side surface polishing portion capable of polishing a side surface and a top surface of the peripheral portion of the wafer.3. The polishing apparatus of claim 1 , wherein the polishing head has a rear surface polishing portion claim 1 , the rear surface polishing portion capable of polishing a rear surface of the peripheral portion of the wafer.4. The polishing apparatus of claim 1 , wherein the polishing solution supplying assembly includes a slit nozzle for spraying the polishing solution.5. The polishing apparatus of claim 1 , wherein the polishing solution supplying assembly includes a nozzle block that horizontally rotates with respect to the wafer.6. The polishing apparatus of claim 1 , wherein the polishing solution supplying assembly includes:a nozzle supporting block having an internal groove, the internal groove connected to a polishing solution supplying line through which the polishing solution is supplied;a nozzle block coupled to the internal groove of the nozzle supporting block, the nozzle block including a distributing ...

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Номер записи: 57
12-06-2014 дата публикации

CUTTING TOOLS AND MACHINING METHODS USING CUTTING TOOLS

Номер: US20140162533A1
Автор: Beaman Danny Lee, Bui Peter, CHARLTON Craig, Fiske Loren, Glasscock Alan, Odendahl David, PARENT MICHAEL
Принадлежит: The Boeing Company

Cutting tools and machining methods using cutting tools are disclosed. An example cutting tool comprises a shank and a head on the shank, the head comprising a diamond abrasive-coated cutting surface, the cutting head having grooves interrupting the cutting surface and extending from the cutting surface toward an axis of rotation of the head, the cutting surface having a substantially constant radius. 1. A cutting tool , comprising:a shank; anda head on the shank, the head comprising a diamond abrasive-coated cutting surface, the head having grooves interrupting the cutting surface and extending from the cutting surface toward an axis of rotation of the head, the cutting surface having a substantially constant radius.2. A cutting tool as defined in claim 1 , wherein the cutting surface is cylindrical claim 1 , the head further comprises a planar end cutting surface claim 1 , and an edge of the head between the cutting surface and the end cutting surface is radiused.3. A cutting tool as defined in claim 2 , wherein the grooves extend from the planar end cutting surface to an upper edge of the cutting surface.4. A cutting tool as defined in claim 1 , wherein the shank is to be operatively coupled to a Computer Numerical Control (CNC) machine.5. A cutting tool as defined in claim 1 , wherein the head is hemispherically shaped.6. A cutting tool as defined in claim 1 , wherein the grooves are helically shaped.7. A cutting tool as defined in claim 1 , wherein the cutting surface has the substantially constant radius in an axial direction of the head.8. A cutting tool as defined in claim 1 , wherein the cutting tool is to perform cutting with the diamond abrasive-coated cutting surface.9. A method of applying a diamond abrasive cutting tool configuration to machining of a filler from a non-metallic composite material claim 1 , comprising:engaging a filler material sheet with a cutting tool, the cutting tool including a shank and a head on the shank, the head comprising a ...

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Номер записи: 58
25-03-2021 дата публикации

POLISHING DEVICE

Номер: US20210086323A1
Автор: KANG Yong
Принадлежит:

A polishing device includes a bearing mechanism including a bearing plate configured to carry wafers and drive the wafer to rotate and a first polishing mechanism including at least one group of rotatable first polishing wheels. Each first polishing wheel is formed with a first polishing groove extending along a circumferential direction. Each group includes two first polishing wheels. The two first polishing wheels in each group are arranged symmetrically with respect to the bearing plate and rotation axes of the two first polishing wheels are coplanar with a rotation axis of the bearing plate. The two first polishing wheels in each group are capable of moving close to or away from the wafer, so that an inner sidewall of the first polishing groove is pressed against or moves away from the wafer. 1. A polishing device , comprising:a bearing mechanism comprising a bearing plate configured to carry a wafer and drive the wafer to rotate; anda first polishing mechanism comprising at least one group of rotatable first polishing wheels, wherein each first polishing wheel is formed with a first polishing groove extending along a circumferential direction, each of the at least one group of rotatable first polishing wheels comprises two first polishing wheels, the two first polishing wheels in each group are arranged symmetrically with respect to the bearing plate and rotation axes of the two first polishing wheels are coplanar with a rotation axis of the bearing plate, and the two first polishing wheels in each group are capable of moving close to or away from the wafer so that an inner sidewall of each first polishing groove is pressed against or moves away from the wafer.2. The polishing device of claim 1 , wherein the bearing mechanism comprises:a driving motor connected to the bearing plate to drive the bearing plate to rotate.3. The polishing device of claim 1 , wherein the first polishing mechanism comprises:at least one group of first motors, wherein each of the at ...

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Номер записи: 59
23-03-2017 дата публикации

Method for cutting display panel

Номер: US20170084879A1
Автор: Chih-Wei Wen, Denghui LIU
Принадлежит: EverDisplay Optronics Shanghai Co Ltd

A method for cutting a display panel is provided by the disclosure. The display panel includes a substrate, a cover plate provided opposite to the substrate, multiple display components sandwiched between the substrate and the cover plate, and encapsulation glue sandwiched between the substrate and the cover plate and surrounding the multiple display components. The method includes: forming multiple display modules by cutting the substrate and the cover plate of the display panel at a position between adjacent display components; and edging a display module obtained through the cutting with an edging machine by a distance from an edge of the display module to inward of the encapsulation glue, until the encapsulation glue is grinded to a preset width. A design of slim bezel can be achieved for the display panel with high accuracy by the method for cutting the display panel according to the disclosure.

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Номер записи: 60
29-03-2018 дата публикации

Burr removing device for wheel

Номер: US20180085882A1
Автор: Bowen Xue, Jiandong Guo
Принадлежит: CITIC Dicastal Co Ltd

The present invention provides a burr removing device for a wheel. The device comprises a rotary lifting system, a brush moving system, a manipulator system, a clamping drive system and the like. The device can effectively remove burrs on back cavities of wheels with different diameters, the size of the brush moving system can be automatically adjusted, and the angle of a brush I can be flexibly adjusted; meanwhile, the device has the characteristics of high automation degree, advanced process, good removal effect and high safety and stability.

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Номер записи: 61
02-04-2015 дата публикации

METHOD FOR GRINDING WORKPIECES, IN PARTICULAR FOR CENTERING GRINDING OF WORKPIECES SUCH AS OPTICAL LENSES

Номер: US20150093967A1
Автор: Diehl Joachim, Moos Steffen, Schmidt Achim
Принадлежит:

The invention relates to a method for centering grinding of workpieces, for example optical lenses by a grinding tool using an actuator for generating an advancing movement between the grinding tool and the workpiece, wherein the actuator and a current regulator for an actuator current which determines an advancing force of the actuator are integrated in a position control loop using a predetermined control cycle. For each control cycle: (i) a desired direction of movement (R) of the advancing movement and an actual direction of movement (R) of the advancing movement are ascertained; then (ii) the ascertained actual and desired directions of movement are compared to one another; and (iii) when the comparison results in a deviation between the actual and desired directions of movement, a predetermined current limit (I) for the actuator current emitted via the current regulator is decreased in a defined manner. 1. A method of grinding a workpiece , by a grinding tool with use of an actuator for producing a relative advancing movement between said grinding tool and said workpiece , wherein the actuator together with a controller for an actuator current , which determines an advance force of the actuator , is integrated in a position control circuit which is run through with a predetermined control cycle , wherein for each control cycle:{'sub': soll(n)', 'ist(n), '(i) a target movement direction (R=−1, 0 or 1) of the advancing movement as well as an actual movement direction (R=−1, 0 or 1) of the advancing movement are determined;'}{'sub': ist(n)', 'soll(n), '(ii) the determined actual movement direction (R) of the advancing movement is then compared with the determined target movement direction (R) of the advancing movement; and'}{'sub': ist(n)', 'soll(n)', 'sollmax', '(n), '(iii) if the comparison gives a difference between the actual movement direction (R) of the advancing movement and the target movement direction (R) of the advancing movement a predetermined ...

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Номер записи: 62
19-06-2014 дата публикации

GLASS PLATE

Номер: US20140170387A1
Автор: Kashima Izuru, Kobayashi Yusuke
Принадлежит: Asahi Glass Company, Limited

A glass plate includes a main flat surface, an edge surface orthogonal to the main flat surface, and a chamfered surface adjacent to the main flat surface and the edge surface. In a cross-sectional surface of the glass plate that is orthogonal to the edge surface and that is orthogonal to the main flat surface, the chamfered surface has a curvature radius greater than or equal to 50 μm at an intersection point between the chamfered surface and a straight line inclined 45 degrees with respect to the main flat surface and a curvature radius ranging from 20 μm to 500 μm at an intersection point between the chamfered surface and a straight line inclined 15 degrees with respect to the main flat surface. 1. A glass plate comprising:a main flat surface;an edge surface orthogonal to the main flat surface; anda chamfered surface adjacent to the main flat surface and the edge surface;wherein in a cross-sectional surface of the glass plate that is orthogonal to the edge surface and that is orthogonal to the main flat surface, the chamfered surface has a curvature radius greater than or equal to 50 μm at an intersection point between the chamfered surface and a straight line inclined 45 degrees with respect to the main flat surface and a curvature radius ranging from 20 μm to 500 μm at an intersection point between the chamfered surface and a straight line inclined 15 degrees with respect to the main flat surface.2. The glass plate as claimed in claim 1 , wherein the chamfered surface has a chamfer width ranging from 20 μm to 500 μm in a direction orthogonal to the edge surface.3. The glass plate as claimed in claim 1 ,wherein in the cross-sectional surface of the glass plate that is orthogonal to the edge surface and that is orthogonal to the main flat surface, a curvature radius r2 of the chamfered surface is greater than or equal to a curvature radius r1 of the chamfered surface,wherein the curvature radius r1 is a curvature radius of the chamfered surface at an intersection ...

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Номер записи: 63
09-04-2015 дата публикации

Dicing Device and Dicing Method

Номер: US20150099428A1
Автор: FUJITA Takashi, Watanabe Junji
Принадлежит:

To stably perform cutting process even on a workpiece formed from a brittle material, in a ductile mode with high precision, without causing cracking and/or breaking in the workpiece. A dicing device which performs cutting process on a workpiece includes: a dicing blade that is formed into a discoid shape from a diamond sintered body formed by sintering diamond abrasive grains, and contains 80% or more of the diamond abrasive grains; a spindle (rotating mechanism) configured to rotate the dicing blade; and a movement mechanism configured to move the workpiece relatively to the dicing blade while forming a constant cut depth on the workpiece by the dicing blade. 1. A dicing device which performs cutting process on a workpiece , comprising:{'b': '80', 'a dicing blade that is formed into a discoid shape from a diamond sintered body formed by sintering diamond abrasive grains, and contains vol % or more of the diamond abrasive grains;'}a rotating mechanism configured to rotate the dicing blade; anda movement mechanism configured to move the workpiece relatively to the dicing blade while the dicing blade forms a constant cut depth on the workpiece.2. The dicing device according to claim 1 , wherein the dicing blade forms a cut on the workpiece while rotating in a down-cutting direction.3. The dicing device according to claim 1 , wherein recessed parts which are formed on a surface of the diamond sintered body are continuously provided on an outer circumferential part of the dicing blade along a circumferential direction.4. The dicing device according to claim 1 , wherein the diamond sintered body is formed by sintering the diamond abrasive grains with use of a sintering aid of a soft metal.5. The dicing device according to claim 1 , wherein an average particle size of the diamond abrasive grains is 25 μm or less.6. The dicing device according to claim 1 , wherein an outer circumferential part of the dicing blade is formed so as to be thinner than an inside portion of the ...

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Номер записи: 64
16-04-2015 дата публикации

POLARIZING FILM CUTTING KNIFE AND METHOD OF MANUFACTURING POLARIZING PLATE USING THE SAME

Номер: US20150101166A1
Автор: JANG Hyun-Hun, KANG Sung-Ho, Kim Dong-wook
Принадлежит:

A polarizing film cutting knife includes a body portion extending in a first direction, and a knife portion connected to the body portion. The knife portion includes a first surface and a second surface. The first and second surfaces form a first angle. The first angle is about 21.8 to 22.2 degrees. 1. A polarizing film cutting knife comprising:a body portion extending in a first direction; anda knife portion connected to the body portion and comprising a first surface and a second surface, the first and second surfaces forming a first angle, the first angle being about 21.8 to 22.2 degrees.2. The polarizing film cutting knife of claim 1 , wherein the knife portion is substantially perpendicular to a polarizing film to be cut.3. The polarizing film cutting knife of claim 2 , wherein the first and second surfaces are symmetric with respect to a direction which is substantially perpendicular to the polarizing film.4. The polarizing film cutting knife of claim 1 , wherein the first angle is 22 degrees.5. The polarizing film cutting knife of claim 1 , wherein the knife portion comprises carbon steel.6. The polarizing film cutting knife of claim 5 , further comprises a coating layer formed on the first and second surfaces of the knife portion claim 5 , the coating layer comprising Teflon.7. A method of manufacturing a polarizing plate comprising:unrolling a polarizing film from a polarizing film roll in a preparing process;forming polarizing plates by cutting the polarizing film using a polarizing film cutting knife in a cutting process;sorting out defective goods among the polarizing plates in a testing process; andstacking the polarizing plates which pass the testing process to form a bunch of the polarizing plates in a packaging process,wherein the polarizing film cutting knife comprises a body portion extending in a first direction, and a knife portion connected to the body portion and comprising a first surface and a second surface, the first and second surface ...

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Номер записи: 65
26-06-2014 дата публикации

BLADE SHARPENING SYSTEM AND METHOD OF USING THE SAME

Номер: US20140179201A1
Автор: PROULX Denis
Принадлежит: AIGUISAGE ELITE INC.

The present document describes a blade sharpening system comprising a blade sharpening device, a blade holding apparatus and a controller operatively coupled to the blade sharpening device and said blade holding apparatus to control sharpening of said blade, and methods of using the same. 1. A blade sharpening system comprising: 'a grinding assembly having a grinding wheel demountably attached to a spindle operatively coupled to a grinding wheel drive system, said grinding wheel configured to contact said blade with a constant grinding pressure and a constant grinding rotation speed;', 'a blade sharpening device configured to contact said blade according to a predetermined shape of said blade comprising'} 'parallel first and second gripping members for contacting opposite sides of said blade and align an edge of said blade with said grinding wheel for sharpening; and', 'a blade holding apparatus to slide said blade over said blade sharpening device, comprising'}a controller operatively coupled to said blade sharpening device and said blade holding apparatus to control sharpening of said blade.2. The blade sharpening system of claim 1 , wherein said blade holding apparatus further comprises adjustable grip tuning members for abutting said first and second parallel gripping members to provide a substantially even gripping pressure along said blade to straighten said blade.3. The blade sharpening system of claim 1 , wherein any one of said constant grinding pressure is according to a type and/or a make of said blade.4. The blade sharpening system of claim 1 , wherein said blade sharpening device further comprises a lever configured to pivot said grinding assembly according to said predetermined shape of said blade.5. The blade sharpening system of claim 4 , wherein said blade sharpening device further comprises an arm pivotally coupled to said lever to pivot said lever according a predetermined shape of said blade.6. The blade sharpening system of claim 5 , wherein ...

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Номер записи: 66
16-04-2015 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20150104620A1
Автор: Kusa Hiroaki, NAKANISHI Masayuki, SEKI Masaya, TAKAHASHI Tamami, YAMAGUCHI Kenji
Принадлежит:

A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position. 136-. (canceled)37. A polishing apparatus for polishing a periphery of a substrate , said apparatus comprising:a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate;at least one polishing head assembly provided so as to face the periphery of the substrate held by said rotary holding mechanism;at least one tape supplying and recovering mechanism configured to supply a polishing tape to said at least one polishing head assembly and recover the polishing tape from said at least one polishing head assembly;at least one moving mechanism configured to move said at least one polishing head assembly in a radial direction of the substrate held by said rotary holding mechanism; anda supply nozzle configured to supply a cooling liquid to a contact portion between the polishing tape and the substrate held by said rotary holding mechanism.38. The polishing apparatus according to claim 37 , wherein:said at least one polishing head assembly comprises plural polishing head assemblies;said at least one tape supplying and recovering mechanism comprises plural tape supplying and recovering mechanisms; andsaid least one ...

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Номер записи: 67
16-04-2015 дата публикации

Polishing apparatus

Номер: US20150105004A1
Автор: Tao Zhou
Принадлежит: Fu Ding Electronical Technology Jiashan Co Ltd, Hon Hai Precision Industry Co Ltd

A polishing apparatus connected to a robot arm and used to polish a workpiece includes a bracket, a polishing assembly, and a positioning assembly. The polishing assembly is mounted on the bracket and includes a driver and a polishing plate connected to the driver. The driver is capable of driving the polishing plate to rotate, and defines an annular positioning groove around the spin axis. The positioning assembly includes a first positioning plate and a second positioning plate mounted on the bracket and opposite to the first positioning plate. The first positioning plate and the second positioning plate are clamped into two sides of the positioning groove, whereby the driver is clamped between the first positioning plate and the second positioning plate.

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Номер записи: 68
13-04-2017 дата публикации

Polishing apparatus and polishing method

Номер: US20170100813A1
Автор: Masaya Seki, Tetsuji Togawa
Принадлежит: Ebara Corp

A polishing apparatus is used for polishing a substrate such as a semiconductor wafer. The polishing apparatus includes a substrate holder to hold a substrate and to rotate the substrate, a pressing member configured to press a polishing tool against the substrate and to polish the substrate, a pressing force control mechanism configured to control a pressing force of the pressing member, and a polishing position limiting mechanism configured to limit a polishing position of the pressing member. A polishing tape or a fixed abrasive is used as the polishing tool.

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Номер записи: 69
12-04-2018 дата публикации

RUBBING ALIGNMENT METHOD AND APPARATUS

Номер: US20180101071A1
Автор: Li Feng, Wang Kai
Принадлежит:

The present disclosure relates to the field of manufacturing liquid crystal display devices, and in particular to a rubbing alignment method. The method includes the following steps: providing a transparent substrate with an alignment film on a surface of the transparent substrate, and driving the transparent substrate to move in a first direction; and rubbing in a rolling manner the alignment film on the surface of the transparent substrate through a rubbing roller with a rubbing cloth on a surface of the rubbing roller, during movement of the transparent substrate. When rubbing in the rolling manner the alignment film on the surface of the transparent substrate through the rubbing roller with the rubbing cloth on the surface of the rubbing roller, the rubbing alignment method further includes carding lint on the rubbing cloth using an ultrasonic wave in real time. 1. A rubbing alignment method , comprising:providing a transparent substrate with an alignment film on a surface of the transparent substrate, and driving the transparent substrate to move in a first direction; andrubbing in a rolling manner the alignment film on the surface of the transparent substrate through a rubbing roller with a rubbing cloth on a surface of the rubbing roller, during movement of the transparent substrate,wherein when rubbing in the rolling manner the alignment film on the surface of the transparent substrate through the rubbing roller with the rubbing cloth on the surface of the rubbing roller, the rubbing alignment method further comprises carding lint on the rubbing cloth using an ultrasonic wave in real time.2. The rubbing alignment method according to claim 1 , wherein when carding the lint on the rubbing cloth using the ultrasonic wave in real time claim 1 , the ultrasonic wave propagates to a surface of the rubbing cloth in a tangential direction of the rubbing roller.3. The rubbing alignment method according to claim 1 , wherein when carding the lint on the rubbing cloth ...

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Номер записи: 70
13-04-2017 дата публикации

METHOD FOR FORMING WAFER

Номер: US20170103900A1
Автор: CHANG RICHARD R., Xiao Deyuan
Принадлежит:

This invention provides a method for forming a wafer comprising forming a silicon substrate, and then performing rapid thermal annealing to the substrate to form a passivation layer. The passivation layer reduces the surface roughness of the silicon substrate. During the formation of a gate oxide layer or an interface, deuterium can diffuse from the substrate and combine with dangling bonds of the interface to form a stable structure, thereby carrier penetration can be prevented and device properties can be enhanced. 1. A method for forming a wafer comprising:providing a silicon substrate,performing rapid thermal annealing to the silicon substrate to form a passivation layer, wherein the rapid thermal annealing comprises using a gas containing deuterium.2. The method of claim 1 , wherein the rapid thermal annealing is performed under a temperature of 1200° C.-1380° C.3. The method of claim 1 , wherein the gas used in the rapid thermal annealing is a mixture of deuterium and hydrogen.4. The method of claim 3 , wherein the deuterium is 1%-100% of the gas.5. The method of claim 1 , wherein the gas used in the rapid thermal annealing is a mixture of deuterium and oxygen.6. The method of claim 5 , wherein the deuterium is 1%-100% of the gas.7. The method of claim 1 , wherein the gas used in the rapid thermal annealing is deuterium.8. The method of claim 1 , wherein the silicon substrate is formed by the steps comprising:forming an silicon ingot,slicing, surface grinding, polishing, edge profiling and cleaning the silicon ingot, andforming the silicon substrate.9. The method of claim 1 , wherein the silicon substrate is monocrystalline silicon.10. The method of claim 8 , wherein the silicon substrate is formed by Czochralski (CZ) method. 1. Field of the InventionThe present application relates to a semiconductor manufacture, and more particularly to a method of formation of a wafer.2. Description of the Related ArtMonocrystalline silicon is the initial material in the ...

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Номер записи: 71
23-04-2015 дата публикации

METHOD AND APPARATUS FOR SMOOTHING WELDED MEMBER

Номер: US20150111471A1
Автор: MITUHASHI Isami, Shirai Kazuhisa, YOSHIHARA Jiro
Принадлежит: SHIROKI CORPORATION

A smoothing method and a smoothing apparatus uses a belt grinding apparatus, including an endless grinding belt and a press pad that presses the grinding belt against a welded area, and uses this belt grinding apparatus in two different modes after obtaining information on heights of surfaces of two welded members along a weld bead of the two welded members. The first mode corresponds to a bead removing step in which the grinding belt is pressed against a welded area by the press pad to reduce the height of the weld bead. The next mode corresponds to a smoothing step in which the grinding belt presses against the welded area by the press pad while being made to move along the surfaces of the two welded members to smooth the welded area. 1. A welded area smoothing method for removing and smoothing a weld bead of two welded members , comprising:a step of preparing a belt grinding apparatus, which includes an endless grinding belt and a press pad that presses said grinding belt against said welded area;a measuring step for detecting positions of heights of surfaces of said two welded members along said weld bead;a bead removing step for reducing a height of said weld bead by pressing said grinding belt against said welded area via said press pad while running said grinding belt using information on said positions of said heights of said surfaces of said two welded members that are detected in said measuring step; anda smoothing step for smoothing said welded area by pressing said grinding belt against said welded area via said press pad while running said grinding belt and moving said grinding belt along said surfaces of said two welded members.2. The welded area smoothing method according to claim 1 , wherein information on heights of a plurality of points along both sides of said weld bead is obtained in said measuring step.3. The welded area smoothing method according to claim 1 , further comprising:a step of detecting an angular difference between said surfaces of ...

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Номер записи: 72
02-06-2022 дата публикации

PROCESSING METHOD OF WAFER

Номер: US20220172952A1
Автор: Nakamura Masaru
Принадлежит:

A processing method of a wafer includes trimming the wafer along its outer peripheral edge while causing a cutting blade to cut from a front surface into a chamfered portion to a depth greater than a finish thickness, so that an annular stepped portion is formed in an outer peripheral surplus region. A protective member is bonded to a side of the front surface of the wafer, and the wafer is ground from its back surface to thin the wafer to a finish thickness. Between trimming and grinding, a laser beam is applied to the stepped portion, so that annular modified layers which are to be fractured under a pressing force to be applied by the grinding are formed in the stepped portion, whereby the fractured fragments of the stepped portion are subdivided. 1. A processing method of a wafer which has on a front surface thereof a device region with a plurality of devices formed therein and an outer peripheral surplus region surrounding the device region and which has a chamfered portion at an outer periphery thereof , by grinding the wafer at a back surface thereof to thin the wafer to a finish thickness , the processing method comprising:a trimming step of cutting the wafer along an outer peripheral edge thereof while causing a cutting blade to cut from the front surface of the wafer into the chamfered portion to a depth greater than the finish thickness, so that an annular stepped portion is formed in the outer peripheral surplus region;a protective member bonding step of, after performing the trimming step, bonding a protective member to a side of the front surface of the wafer;a laser processing step of, after performing the protective member bonding step, applying, to the annular stepped portion, a laser beam of a wavelength that has transmissivity for the wafer; anda griding step of, after performing the laser processing step, of grinding the wafer from the back surface thereof to thin the wafer to the finish thickness,wherein, in the laser processing step, fracture ...

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Номер записи: 73
29-04-2021 дата публикации

METHOD FOR PREPARING SILICON CARBIDE WAFER AND SILICON CARBIDE WAFER

Номер: US20210123843A1
Автор: CHOI Jung Woo, JANG Byung Kyu, KIM Jung-Gyu, KO Sang Ki, KU Kap-Ryeol, LEE Yeon Sik, PARK Jong Hwi, SHIM Jongmin, YANG Eun Su
Принадлежит: SKC CO., LTD.

A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm). 1. A method for preparing a wafer , comprising:disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space;subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space;growing the SiC ingot on the seed crystal;collecting the SiC ingot after cooling the reactor;grinding an edge of the SiC ingot; andcutting the ground SiC ingot to prepare the wafer,wherein a thermal conductivity of the reactor is 120 W/mK or less.2. The method of claim 1 , wherein the growing the SiC ingot on the seed crystal or the cooling the reactor is performed in an inert gas atmosphere having a flow in a direction from the raw material to the seed crystal.3. The method of claim 2 , wherein the growing the SiC ingot on the seed crystal is performed in the inert gas atmosphere having a flow rate of 70 sccm to 330 sccm.4. The method of claim 2 , wherein cooling the reactor is performed in the inert gas atmosphere having a flow rate of 1 sccm to 300 sccm.5. The method of claim 3 , wherein the temperature of the internal space is increased at a temperature increase rate of 1° C./min to 10° C./min.6. The method of claim 4 , wherein the cooling the reactor is performed at a cooling rate of 1° C./min to 10° C./min.7. A wafer prepared from the method of claim 1 , ...

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Номер записи: 74
28-04-2016 дата публикации

METHOD OF DETECTING ABNORMALITY IN POLISHING OF A SUBSTRATE AND POLISHING APPARATUS

Номер: US20160114455A1
Автор: SEKI Masaya, TAKENAKA Hiroyuki, TOGAWA Tetsuji
Принадлежит:

A method of detecting an abnormality in polishing of a substrate is provided. The method includes: rotating the substrate; pressing a polishing tool against an edge portion of the substrate to polish the edge portion; measuring a position of the polishing tool relative to a surface of the substrate; determining an amount of polishing of the substrate from the position of the polishing tool; calculating a polishing rate from the amount of polishing of the substrate; and judging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range. 1. An apparatus for detecting an abnormality in polishing of an edge portion of a substrate , said apparatus comprising:a substrate holder configured to rotate the substrate;a pressing device configured to press a polishing tool against the edge portion of the substrate to polish the edge portion;a measuring device configured to measure a position of the polishing tool relative to a surface of the substrate; anda controller configured to determine an amount of polishing of the substrate from the position of the polishing tool, calculate a polishing rate from the amount of polishing of the substrate, and judge whether or not an abnormality in polishing of the edge portion of the substrate has occurred, the abnormality occurring if a number of times the polishing rate goes beyond a predetermined range reaches a predetermined number.2. The apparatus according to claim 1 , wherein the controller is configured to terminate polishing of the edge portion of the substrate if the abnormality in polishing of the edge portion of the substrate is judged to have occurred.3. The apparatus according to claim 1 , wherein the controller is configured to generate an alarm if the abnormality in polishing of the edge portion of the substrate is judged to have occurred.4. The apparatus according to claim 1 , wherein the polishing tool is a polishing tape.5. The apparatus ...

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Номер записи: 75
10-07-2014 дата публикации

DEBURRING MACHINE AND METHOD FOR DEBURRING

Номер: US20140194038A1
Автор: Lowe Gary Dean
Принадлежит: WHITE DRIVE PRODUCTS, INC.

A method for deburring a ground metal part includes loading a ground metal part into a carrier, contacting a first planar surface of the ground metal part with a first grinding wheel, and contacting a second planar surface of the ground metal part with a second grinding wheel. The first grinding wheel is rotated in a first rotational direction. The second grinding wheel is rotated also in the first rotational direction. After the first grinding wheel is rotated in the first rotational direction, the first grinding wheel is then rotated in a second rotational direction, which is opposite to the first rotational direction. After the second grinding wheel is rotated in the first rotational direction, the second grinding wheel is also rotated in the second rotational direction. 1. A method for deburring a ground metal part , the method comprising:loading a ground metal part into a first circular opening in a carrier of a deburring machine, wherein the carrier also includes a second circular opening;contacting a first planar surface of the ground metal part with a first grinding wheel;contacting a second planar surface, which is opposite to and parallel with the first planar surface, of the ground metal part with a second grinding wheel;with the first grinding wheel in contact with the first planar surface, rotating the first grinding wheel in a first rotational direction about a first rotational axis, which is parallel to and offset from a first central axis of the first circular opening in the carrier;with the second grinding wheel in contact with the second planar surface, rotating the second grinding wheel in the first rotational direction about a second rotational axis, which is parallel to and offset from the first central axis;with the first grinding wheel in contact with the first planar surface, rotating the first grinding wheel in a second rotational direction, which is opposite to the first rotational direction, about the first rotational axis;with the second ...

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Номер записи: 76
30-04-2015 дата публикации

METHOD OF GRINDING WAFER STACKS TO PROVIDE UNIFORM RESIDUAL SILICON THICKNESS

Номер: US20150118826A1
Автор: Kalenian William J., Walsh Thomas A.
Принадлежит: STRASBAUGH

A method of processing a device wafer in a wafer stack by chucking the wafer stack device side down and grinding the exposed side of the carrier wafer to parallel with the device wafer, and thereafter flipping the wafer stack and chucking the wafer stack carrier side down and grinding residual silicon from the device wafer. 1gluing a carrier wafer to a front side of a device wafer to provide a wafer stack, leaving a backside of the device wafer exposed;mounting the wafer stack to a chuck, with the device wafer backside pulled down on the chuck, leaving an exposed side of the carrier wafer exposed to a grinder;grinding the exposed side of the carrier wafer till flat and smooth, and parallel to the backside of the device wafer;removing the wafer stack from the chuck, and thereafter mounting the wafer stack to the chuck with the exposed side of the carrier wafer pulled down on the chuck, so that the device wafer backside is exposed to the grinder;grinding the device wafer backside to remove silicon from the device wafer backside without exposing a copper thru silicon via in the device wafer.. A method of processing a device wafer comprising the steps of: This application claims priority to U.S. Provisional Application 61/895,862, filed Oct. 25, 2013.The inventions described below relate the field of wafer grinding.Wafer stacking refers to the process of adhering a device wafer (a silicon wafer with a device, or a device layer which is to form a layer of a multi-layer device) to a carrier wafer. An assembly of a processed wafer (with devices) glued to a carrier wafer used to support the processed wafer while it is manipulated is referred to as a stacked wafer. The carrier wafer is used only for handling purposes, and is removed and discarded after the device wafer is processed. Stacked wafers are commonly assembled and used during the manufacture of processed wafers incorporating “thru silicon vias” into their design. Thru silicon vias (TSV's) are metal (often Cu) wires ...

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Номер записи: 77
09-06-2022 дата публикации

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

Номер: US20220181142A1
Автор: HSIUNG Chien-Kang, Papanu James S., SUNDARRAJAN Arvind
Принадлежит:

Methods and apparatus for far edge trimming are provided herein. For example, an apparatus includes an integrated tool for processing a silicon substrate, comprising a vacuum substrate transfer chamber, an edge trimming apparatus coupled to the vacuum substrate transfer chamber and comprising a high pulse frequency laser and substrate support, wherein at least one of the high pulse frequency laser or the substrate support are movable with respect to each other and configured to trim about 2 mm to about 5 mm from a peripheral edge of a substrate when disposed on the substrate support, and a plasma etching apparatus coupled to the vacuum substrate transfer chamber and configured to etch silicon. 1. An integrated tool for processing a silicon substrate , comprising: a vacuum substrate transfer chamber;', 'an edge trimming apparatus coupled to the vacuum substrate transfer chamber and comprising a high pulse frequency laser and substrate support, wherein at least one of the high pulse frequency laser or the substrate support are movable with respect to each other and configured to trim about 2 mm to about 5 mm from a peripheral edge of a substrate when disposed on the substrate support; and', 'a plasma etching apparatus coupled to the vacuum substrate transfer chamber and configured to etch silicon., 'a controller configured to control2. The integrated tool of claim 1 , wherein the substrate support is rotatable and is an electrostatic chuck or a vacuum chuck.3. The integrated tool of claim 1 , wherein the high pulse frequency laser is movable along an x-axis claim 1 , a y-axis claim 1 , or a z-axis.4. The integrated tool of claim 1 , wherein the plasma etching apparatus is one of a plasma-based sputter etching apparatus or a plasma-based stripping apparatus.5. The integrated tool of claim 1 , wherein the controller is further configured to control:an apparatus configured to apply a coating layer at least on the substrate; anda removal apparatus configured to remove the ...

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Номер записи: 78
25-08-2022 дата публикации

DEVICE FOR PROCESSING THE BORDERS OF FLAT WORKPIECES

Номер: US20220266407A1
Автор: HASELMAYR Franz, LUEGER Christoph, ZEHETHOFER Johannes
Принадлежит:

In the case of a device for trimming plate-like workpieces, such as glass panels, a grinding ring that is rotated around a shaft by a drive is used. The grinding surfaces that act by ablation on the edges of the side of the workpiece are designed to move in the axial direction, so that during trimming, they can follow the edges of the workpiece. The grinding surfaces are automatically positioned on the edges that are to be trimmed of the workpiece, even if the edges do not lie in the prescribed target position. The grinding ring is mounted to float on its carrier via a hydrostatic bearing or a gas bearing. 1. Device for erosion-treating the edges on sides of flat workpieces with at least one grinding ring , which has grinding surfaces , wherein a carrier that can be driven in rotation around a shaft is provided for the grinding ring and wherein the grinding ring is coupled for rotation to the carrier , the grinding ring is arranged to move on the carrier in the direction of the shaft , wherein the grinding ring is mounted to float on the carrier and wherein the grinding ring is mounted to float on the carrier via a hydrostatic bearing or gas bearing.2. The device according to claim 1 , wherein the coupling has at least one pin as a driving pin and/or guide claim 1 , which is fastened to the carrier and engages in a hole or recess in the grinding ring.3. The device according to claim 2 , wherein the pin is accommodated in the hole or recess with a slide guide.4. The device according to claim 1 , wherein the grinding surfaces are elastically springy in the direction of the shaft.5. The device according to claim 1 , wherein the grinding ring is loaded in an elastically springy manner in its starting position.6. The device according to claim 1 , wherein the grinding ring comprises two grinding ring parts and wherein the grinding surfaces are provided on the grinding ring parts.7. The device according to claim 1 , wherein the grinding surfaces are designed to be conical ...

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Номер записи: 79
24-07-2014 дата публикации

POLISHING APPARATUS AND METHOD OF POLISHING SEMICONDUCTOR WAFER

Номер: US20140206262A1
Автор: OONO Katsuyuki
Принадлежит: KABUSHIKI KAISHA TOSHIBA

An aspect of the present embodiment, there is provided a polishing apparatus, including a stage configured to be placed a semiconductor wafer thereon and to be rotated with the semiconductor wafer, a first polishing unit configured to contact a polishing tape to one portion of the semiconductor wafer on the stage, a second polishing unit configured to contact to other portion of the semiconductor wafer, the other portion being different from the one portion, a feed unit configured to feeding the polishing tape, and a recovery unit configured to recovery the polishing tape. 1. A polishing apparatus , comprising:a stage configured to be placed a semiconductor wafer thereon and to be rotated with the semiconductor wafer;a first polishing unit configured to contact a polishing tape to one portion of the semiconductor wafer on the stage;a second polishing unit configured to contact to other portion of the semiconductor wafer, the other portion being different from the one portion;a feed unit configured to feeding the polishing tape; anda recovery unit configured to recovery the polishing tape.2. The polishing apparatus of claim 1 , further comprising:a cleaning unit configured to clean a contact area contacted with the semiconductor wafer of the polishing tape in the first polishing unit.3. The polishing apparatus of claim 2 , whereinthe second polishing unit contacts the contact area of the polishing tape cleaned by the cleaning unit to the semiconductor wafer.4. The polishing apparatus of claim 1 , whereinthe one portion of the semiconductor wafer contacted by the polishing tape is an outer periphery portion of a surface to be placed of the semiconductor wafer, where the surface to be placed is set on the stage.5. The polishing apparatus of claim 1 , whereinthe other portion of the semiconductor wafer contacted by the polishing tape is an end portion of the semiconductor wafer.6. The polishing apparatus of claim 2 , wherein the cleaning unit includes a cleaning bath ...

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Номер записи: 80
04-05-2017 дата публикации

WAFER BACK-SIDE POLISHING SYSTEM AND METHOD FOR INTEGRATED CIRCUIT DEVICE MANUFACTURING PROCESSES

Номер: US20170125237A1
Автор: CHOU Yu-Wei, Lee Shen-Nan, Lien Kuo-Cheng, Lin Chang-Sheng, Lin Kuo-Yin, Liu Wen-Kuei, Lu Hsin-Hsien, TSAI Teng-Chun
Принадлежит:

Some embodiments are directed to a wafer polishing tool. The wafer polishing tool includes a first polisher, a second polisher downstream of the first polisher, a third polisher downstream of the second polisher, and a fourth polisher downstream of the third polisher. The first polisher receives a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, and polishes a center region on the back side of the wafer. The second polisher receives the wafer via transporting equipment and buffs the center region of the back side of the wafer. The third polisher receives the wafer via the transporting equipment and polishes a back side edge region of the wafer. The fourth polisher receives the wafer via the transporting equipment and buffs the back side edge region of the wafer. 1. A wafer polishing tool , comprising:a first polisher configured to receive a wafer having a front side and a back side with integrated circuit component devices disposed on the front side of the wafer, the first polisher configured to polish a center region on the back side of the wafer;a second polisher, downstream of the first polisher, configured to receive the wafer via transporting equipment and buff the center region of the back side of the wafer;a third polisher, downstream of the second polisher, configured to receive the wafer via the transporting equipment and polish a back side edge region of the wafer; anda fourth polisher, downstream of the third polisher, configured to receive the wafer via the transporting equipment and buff the back side edge region of the wafer.2. The wafer polishing tool of claim 1 ,wherein the first polisher comprises a first polishing pad having a first grit, and the second polisher comprises a first buffing pad having a second grit, the second grit being less coarse than the first grit.3. The wafer polishing tool of claim 2 , wherein the first grit is 10k or coarser.4. The wafer polishing tool ...

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Номер записи: 81
10-05-2018 дата публикации

BLADE SHARPENING SYSTEM AND METHOD OF USING THE SAME

Номер: US20180126250A1
Автор: PROULX Denis
Принадлежит:

The present document describes a blade sharpening system comprising a blade sharpening device, a blade holding apparatus and a controller operatively coupled to the blade sharpening device and said blade holding apparatus to control sharpening of said blade, and methods of using the same. 1. A blade sharpening system comprising: a grinding assembly, configured to', 'slide according to a longitudinal trajectory along a length of said blade and grind said blade, and', 'at least one of', 'grind said blade with a variable grinding pressure;', 'measure a shape of said blade; and', 'grind said blade according to said measured shape of said blade with a variable grinding pressure;, 'a blade sharpening device configured to contact said blade, comprising 'parallel first and second gripping members for contacting opposite sides of said blade and align an edge of said blade with said grinding assembly; and', 'a blade holding apparatus to slide said blade over said blade sharpening device, comprising'}a controller operatively coupled to said blade sharpening device and said blade holding apparatus, configured to at least one ofcontrol sharpening of said blade according to said variable grinding pressure exerted during sharpening on said blade by said grinding assembly,measure said shape of said blade, andcontrol sharpening of said blade according to said measured shape of said blade according to said variable grinding pressure exerted during sharpening on said blade by said grinding assembly.2. The blade sharpening system of claim 1 , wherein said grinding assembly comprises grinding means.3. The blade sharpening system of claim 2 , wherein said grinding means comprises a grinding belt claim 2 , a grinding strap claim 2 , a grinding sheet claim 2 , a milling tool claim 2 , a grinding rod claim 2 , a grinding wheel claim 2 , or combinations thereof.4. The blade sharpening system of any one of - claim 2 , wherein said grinding means is a grinding wheel.5. The blade sharpening ...

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Номер записи: 82
11-05-2017 дата публикации

SYSTEMS AND METHODS FOR SHAPING MATERIALS

Номер: US20170129119A1
Автор: Rozot Thierry
Принадлежит:

Shaping systems and methods suitable for cutting a material and deburring devices for performing a deburring operation on an edge of the material. The shaping systems include means for supporting the material and at least first and second carriage units independently operable to travel parallel to an axis of the supporting means. The first carriage unit comprises a cutting device coupled thereto with a first arm, and the second carriage unit comprises a deburring device coupled thereto with a second arm. The cutting device and the deburring device are coupled to the first and second carriage units, respectively, so as to move in a travel direction relative to the material supported by the supporting means and perform cutting and deburring operations, respectively, from opposite surfaces of the material. 1. A shaping system for cutting a material , the shaping system comprising:means for supporting the material;at least first and second carriage units independently operable to travel parallel to an axis of the supporting means, the first carriage unit comprising a cutting device coupled thereto with a first arm, the second carriage unit comprising a deburring device coupled thereto with a second arm, the cutting device and the deburring device being coupled to the first and second carriage units, respectively, so as to move in a travel direction relative to the material supported by the supporting means and perform cutting and deburring operations, respectively, from opposite surfaces of the material.2. The shaping system according to claim 1 , wherein the deburring device is behind the cutting device relative to the travel direction.3. The shaping system according to claim 1 , further comprising means associated with the first carriage unit for moving the cutting device in directions toward and away from the supporting means and transverse to the axis of the supporting means.4. The shaping system according to claim 1 , further comprising means associated with the ...

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Номер записи: 83
31-07-2014 дата публикации

Wafer Edge Trimming Tool Using Abrasive Tape

Номер: US20140213152A1
Автор: Chang Tang-Kuei, Chen Kei-Wei, Wang Ying-Lang, Wei Kuo-Hsiu, YANG Huai-Tei
Принадлежит:

A wafer edge trimming tool includes an abrasive tape and a holding module configured to hold the abrasive tape against portions of an edge of a rotating wafer during a wafer edge trimming process. 1. A wafer edge trimming tool , comprising:an abrasive tape; anda holding module configured to hold the abrasive tape against portions of an edge of a rotating wafer during a wafer edge trimming process.2. The wafer edge trimming tool of claim 1 , further comprising a polishing head configured to apply downward force to the abrasive tape so that the abrasive tape is in contact with the rotating wafer during the wafer edge trimming process.3. The wafer edge trimming tool of claim 2 , wherein the polishing head comprises silicon carbide (SiC).4. The wafer edge trimming tool of claim 1 , further comprising a rotation module configured to rotate the rotating wafer during the wafer edge trimming process.5. The wafer edge trimming tool of claim 1 , wherein the abrasive tape comprises an abrasive material bonded to a base film.6. The wafer edge trimming tool of claim 5 , wherein the abrasive material comprises diamond claim 5 , silica dioxide claim 5 , cerium oxide claim 5 , silicon carbide claim 5 , aluminum oxide claim 5 , or any combination thereof.7. The wafer edge trimming tool of claim 5 , wherein the abrasive material comprises diamond powder with a grain size ranging from about 0.5 μm to about 30 μm.8. The wafer edge trimming tool of claim 5 , wherein the base film comprises polyethylene terephthalate (PET) or polyester.9. The wafer edge trimming tool of claim 1 , wherein the holding module comprises a first holding part and a second holding part configured to position a portion of the abrasive tape between the first holding part and the second holding part during the wafer edge trimming process.10. The wafer edge trimming tool of claim 9 , wherein the first holding part and the second holding part are rollers.11. A method of wafer edge trimming claim 9 , comprising: ...

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Номер записи: 84
31-07-2014 дата публикации

Wafer Polishing Tool Using Abrasive Tape

Номер: US20140213153A1
Автор: Chang Tang-Kuei, Chen Kei-Wei, Lo Wei-Jen, Wang Ying-Lang, Wei Kuo-Hsiu
Принадлежит:

An embodiment wafer polishing tool includes an abrasive tape, a polish head holding the abrasive tape, and a rotation module. The rotation module is configured to rotate a wafer during a wafer polishing process, and the polish head is configured to apply pressure to the abrasive tape toward a first surface of the wafer during the wafer polishing process. 1. A wafer polishing tool , comprising:an abrasive tape;a polish head holding the abrasive tape; anda rotation module, wherein the rotation module is configured to rotate a wafer during a wafer polishing process, and wherein the polish head is configured to apply pressure to the abrasive tape toward a first surface of the wafer during the wafer polishing process.2. The wafer polishing tool of claim 1 , further comprising a bottom plate configured to provide support on a second surface of the wafer during the wafer polishing process claim 1 , wherein the second surface is opposite the first surface of the wafer.3. The wafer polishing tool of claim 2 , wherein the bottom plate is configured to apply a fluid on the second surface of the wafer during the wafer polishing process.4. The wafer polishing tool of claim 3 , wherein the fluid is deionized water (DIW).5. The wafer polishing tool of claim 1 , wherein the abrasive tape comprises an abrasive material layer bonded to a base film.6. The wafer polishing tool of claim 5 , wherein the abrasive material layer comprises diamond claim 5 , silica dioxide claim 5 , cerium oxide claim 5 , silicon carbide claim 5 , aluminum oxide claim 5 , or any combination thereof.7. The wafer polishing tool of claim 5 , wherein the abrasive material layer comprises diamond powder with a grain size ranging from 0.5 μm to 30 μm.8. The wafer polishing tool of claim 5 , wherein the base film comprises polyethylene terephthalate (PET) or polyester.9. The wafer polishing tool of claim 1 , wherein the polishing head comprises polyphenylene sulfide (PPS) claim 1 , polyvinyl chloride (PVC) claim 1 ...

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Номер записи: 85
31-07-2014 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20140213154A1
Автор: SEKI Masaya, TOGAWA Tetsuji
Принадлежит: EBARA CORPORATION

A polishing apparatus is used for polishing a substrate such as a semiconductor wafer. The polishing apparatus includes a substrate holder to hold a substrate and to rotate the substrate, a pressing member configured to press a polishing tool against the substrate and to polish the substrate, a pressing force control mechanism configured to control a pressing force of the pressing member, and a polishing position limiting mechanism configured to limit a polishing position of the pressing member. A polishing tape or a fixed abrasive is used as the polishing tool. 1. A polishing apparatus for polishing a substrate , comprising:a substrate holder configured to hold a substrate and to rotate the substrate;a pressing member configured to press a polishing tool against the substrate and to polish the substrate;a pressing force control mechanism configured to control a pressing force of the pressing member; anda polishing position limiting mechanism configured to limit a polishing position of the pressing member.2. The polishing apparatus according to claim 1 , further comprising:a positioning member coupled to the pressing member, the positioning member and the pressing member being integrally movable;wherein the polishing position limiting mechanism comprises a stopper configured to limit a movement of the positioning member and a stopper moving mechanism configured to move the stopper.3. The polishing apparatus according to claim 2 , wherein the stopper moving mechanism comprises a ball screw mechanism and a servomotor configured to operate the ball screw mechanism.4. The polishing apparatus according to claim 2 , wherein an alarm signal is generated when the positioning member is not brought into contact with the stopper within a predetermined polishing time.5. The polishing apparatus according to claim 1 , wherein the pressing force control mechanism comprises an air cylinder configured to apply the pressing force to the pressing member.6. A polishing apparatus for ...

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Номер записи: 86
31-07-2014 дата публикации

WAFER POLISHING APPARATUS AND METHOD

Номер: US20140213155A1
Автор: TOGAWA Tetsuji, Watanabe Toshifumi, YOSHIDA Atsushi
Принадлежит:

An apparatus and method of polishing a substrate is described. The polishing includes: rotating a substrate; pressing a first polishing tool against an edge portion of the substrate to polish the edge portion; and pressing a second polishing tool against the edge portion of the substrate to polish the edge portion. The second polishing tool is located more inwardly than the first polishing tool with respect to a radial direction of the substrate. The first polishing tool has a polishing surface rougher than a polishing surface of the second polishing tool. 1. A method of manufacturing a semiconductor , comprising:rotating a semiconductor wafer;applying a first polishing tool against an edge portion of the semiconductor wafer to polish the edge portion; andapplying a second polishing tool against the edge portion of the semiconductor wafer to polish the edge portion, the second polishing tool being located more inwardly than the first polishing tool with respect to a radial direction of the semiconductor wafer,the first polishing tool having a polishing surface more abrasive than a polishing surface of the second polishing tool.2. The method of manufacturing a semiconductor according to claim 1 , further comprising:bringing the second polishing tool into contact with the edge portion of the semiconductor wafer after a predetermined, time has elapsed from a time when the first polishing tool is brought into contact with the edge portion of the substrate3. The method of manufacturing a semiconductor according to claim 1 , wherein a contact width of the first polishing tool when contacting the edge portion of the semiconductor wafer is equal to or larger than a contact Width of the second polishing tool when contacting the edge portion of the semiconductor wafer.4. The method of manufacturing a semiconductor according to claim 1 , wherein a removal rate of the edge portion polished by the first polishing tool is higher than a removal rate of the edge portion polished by ...

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Номер записи: 87
02-05-2019 дата публикации

DEVICE FOR REMOVING BURRS FROM RISER OF ALUMINUM ALLOY WHEEL

Номер: US20190126424A1
Автор: BI Xinyu, LIU Huiying, YU Zhiyuan
Принадлежит: CITIC Dicastal CO., LTD

Disclosed is a device for automatically removing burrs from a riser of an aluminum alloy wheel. The device is composed of a frame, a clamping gear rack structure, a support plate, a servo motor and the like. When a clamping cylinder drives a left sliding plate to move, clamping wheels are controlled to center and clamp the wheel, and the servo motor controls the rotation of the clamping wheels, so that the wheel may rotate while being clamped. When a distance adjusting cylinder drives a right sliding block to move, a left sliding block and the right sliding block move synchronously under the action of a feed gear rack structure, so that a left burr tool and a right burr tool move synchronously to adjust the distance between them according to the diameter of a cap slot. 1. A device for automatically removing burrs from a wheel riser , comprises a frame , a clamping gear rack structure , a support plate , a servo motor , lower guide rails , a left sliding plate , a clamping cylinder , shafts , clamping wheels , a left burr tool , ranging sensors , a feed gear rack structure , a left sliding block , a movable support plate , guide pillars , a feed cylinder , a right sliding block , upper guide rails , a cylinder support plate , a distance adjusting cylinder , a right burr tool and a right sliding plate , wherein , two guide pillars are bilaterally symmetrically mounted at upper part of the frame , the feed cylinder is mounted in upper center of the frame , output end of the feed cylinder is connected to the movable support plate , the upper guide rails are mounted on the movable support plate , the left sliding block is connected with the right sliding block by the feed gear rack structure , the left burr tool is fixed on the left sliding block , and the right burr tool is fixed on the right sliding block , one of the ranging sensors is mounted on the left burr tool and the other of the ranging sensors is mounted on the right burr tool , the cylinder support plate is ...

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Номер записи: 88
21-05-2015 дата публикации

METHOD FOR AUTOMATIC SHARPENING OF A BLADE

Номер: US20150140901A1
Автор: Eriksson Magnus
Принадлежит:

The method is for sharpening a blade. An automatic sharpening apparatus is provided that has a holder. A blade is placed into the holder. A grinding-wheel driving motor, in operative engagement with a wheel on a spindle, rotates a grinding wheel. A grinding assembly motor moves the grinding wheel in an x-direction towards the blade. A linear motor moves the grinding wheel from a first position to a second position in a z-direction without moving the grinding-wheel driving motor. The rotating grinding wheel engages the blade. The grinding wheel sharpens the blade. 1. A method for sharpening a blade , comprising:providing an automatic sharpening apparatus having a holder;placing a blade into the holder;a grinding-wheel driving motor, in operative engagement with a wheel on a spindle, rotating a grinding wheel via a belt, a grinding assembly motor moving the grinding wheel in an x-direction towards the blade;a linear motor moving the grinding wheel from a first position to a second position in a z-direction without moving the grinding-wheel driving motor;the rotating grinding wheel engaging the blade and the grinding wheel sharpening the blade.2. The method according to wherein the method further comprises the step of providing a magnetic spring in operative engagement with the linear motor claim 1 , the spring providing a counter-weight to a weight of a set of grinding wheels claim 1 , transmission assembly and a tool exchanger assembly.3. The method according to wherein the method further comprises the step of rollers moving together with movement of wheel to maintain a constant belt tension of belt as the grinding wheels are moved in the z-direction.4. The method according to wherein the method further comprises the step of a precision member moving the grinding wheels in a y-direction relative to the grinding-wheel driving motor and blade.5. The method according to wherein the method further comprises the step of the grinding assembly motor moving the grinding ...

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Номер записи: 89
21-05-2015 дата публикации

METHOD FOR AUTOMATIC SHARPENING OF A BLADE

Номер: US20150140902A1
Автор: Eriksson Magnus
Принадлежит:

The method is for sharpening a blade. An automatic sharpening apparatus is provided that has a housing with an elongate opening defined therein. A blade is placed inside the elongate opening. The blade is tightened between self-centered clamp holders. The rotation of the grinding wheel is turned on. The rotating grinding-wheel engages an underside of the blade and automatically moves along the blade by following a contour of the blade. While the grinding wheel moves along the blade, a counter-weight provides a counter-weight to the grinding wheel. The blade is sharpened while the blade is stationary inside the elongate opening of the housing. 1. A method for sharpening a blade , comprising:providing an automatic sharpening apparatus having a housing with an elongate opening defined therein,placing a blade inside the elongate opening,tightening the blade between self-centered clamp holders,turning on rotation of a grinding wheel,the rotating grinding wheel engaging the blade and automatically moving along the blade by following a contour of the blade,while the grinding wheel moving along the blade, a counter-weight providing a counter-weight to the grinding wheel,sharpening the blade while the blade being stationary inside the elongate opening of the housing.2. The method according to wherein the method further comprises the step of tightening the clamp holders about the blade by turning a knob.3. The method according to wherein the method further comprises the step of sliding protrusions relative to elongate openings.4. The method according to wherein the method further comprises the step of turning a threaded lead screw to move a grinding mechanism claim 1 , supporting the grinding wheel so that the grinding wheel moves between elongate bars in operative engagement with the grinding mechanism.5. The method according to wherein the method further comprises the step of axially adjusting a position of the grinding wheel between the elongate bars.6. The method ...

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Номер записи: 90
17-05-2018 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20180133861A1
Автор: Kodera Kenji, NAKANISHI Masayuki, Watanabe Toshifumi
Принадлежит:

To provide a polishing apparatus capable of polishing bevel portions of varying shape by selecting a suitable polishing recipe, based on a state before polishing. 1. A polishing apparatus comprising:a holder for holding a workpiece;a polishing member for polishing a peripheral portion of the workpiece while the polishing member is pressed against the peripheral portion;a polishing-condition determiner for determining a polishing condition, based on data associated with a state of the peripheral portion before the polishing, to suit the state; anda controller for controlling the polishing member to polish the workpiece in accordance with the polishing condition.2. A polishing apparatus according to claim 1 , wherein the data indicates to which type claim 1 , of a plurality of types associated with the state claim 1 , the state of the peripheral portion belongs.3. A polishing apparatus according to claim 1 , wherein the state of the peripheral portion is a shape of the peripheral portion.4. A polishing apparatus according to claim 3 , wherein the data associated with the shape of the peripheral portion is obtained by a confocal laser microscope.5. A polishing apparatus according to claim 3 , wherein the data associated with the shape of the peripheral portion is obtained by a telecentric optical system.6. A polishing apparatus according to claim 1 , wherein the state of the peripheral portion is the state of a substance attached to the peripheral portion.7. A polishing apparatus according to claim 1 , further comprising a polishing-termination determiner that claim 1 , after the polisher polishes the workpiece claim 1 , determines whether to terminate the polishing claim 1 , based on data associated with a state of the peripheral portion after polishing.8. A polishing apparatus according to claim 1 , wherein the peripheral portion of the workpiece is a bevel portion that is an end face of the peripheral portion of the workpiece.9. A polishing apparatus according to ...

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Номер записи: 91
02-05-2019 дата публикации

WAFER AND METHOD FOR ANALYZING SHAPE OF THE SAME

Номер: US20190131192A1
Автор: Lee Eung Ju, Lee Woo Sung
Принадлежит:

Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers. 1. A method of analyzing a shape a wafer , the method comprising:measuring a cross-sectional shape of a plurality of wafers;obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer;forming a thin film layer on a surface of each of the wafers;measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; andconfirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.21. The method of claim 2 , wherein when a height of a bevel portion in the edge region of the wafer is B claim 2 , the second point has a height difference within 10% from the front surface of the wafer.3. The method of claim 1 , wherein the second point is positioned at a distance of 50 to 90 micrometers in a horizontal direction from a start point of a bevel portion of the edge region of the wafer.41. The method of claim 1 , wherein when a height of a bevel portion in the edge region of the wafer is B claim 1 , the first point has a height difference within 2.0% from the front surface of the wafer.5. A wafer comprising:a bulk region;a front surface and a back surface of the bulk region opposite and parallel to each other; andan edge region disposed at an edge of the bulk region, ...

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Номер записи: 92
18-05-2017 дата публикации

SiC SUBSTRATE SEPARATING METHOD

Номер: US20170136572A1
Автор: Hirata Kazuya
Принадлежит:

Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point. 1. An SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner , said SiC substrate having a first surface and a second surface opposite to said first surface , said SiC substrate separating method comprising:an adhesive tape attaching step of attaching a transparent adhesive tape to said first surface of said SiC substrate;a support member attaching step of attaching a support member to said second surface of said SiC substrate;a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to said SiC substrate and said adhesive tape inside said SiC substrate at a predetermined depth from said adhesive tape after performing said adhesive tape attaching step and said support member attaching step, and next applying said laser beam to said adhesive tape as relatively moving said focal point and said SiC substrate to thereby form a modified layer parallel to said first surface of said SiC substrate and cracks propagating from said modified layer, thus forming a separation start point; anda separating step of applying an external force to said SiC substrate ...

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Номер записи: 93
17-05-2018 дата публикации

WAFER HAVING STEP AND METHOD FOR MANUFACTURING WAFER HAVING STEP

Номер: US20180136560A1
Автор: TAKEDA Naoyuki
Принадлежит: Mitsubishi Electric Corporation

The present invention has an object of providing a stepped wafer that can prevent a resist from remaining after development, and a method for manufacturing the stepped wafer. The stepped wafer according to the present invention is a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery. The step includes a curved surface with a radius of curvature ranging from 300 μm to 1800 μm. 1. A stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery ,wherein said step includes a curved surface with a radius of curvature ranging from 300 μm to 1800 μm.2. The stepped wafer according to claim 1 ,wherein said step includes a plurality of steps, andeach of said steps includes a curved surface with a radius of curvature ranging from 300 μm to 1800 μm.3. The stepped wafer according to claim 1 ,wherein said step includes a sloped portion and a flat portion, andsaid curved surface is formed at least at a boundary between said sloped portion and said flat portion.4. A method for manufacturing a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery claim 1 , said method comprising(a) forming said step including a curved surface with a radius of curvature ranging from 300 μm to 1800 μm.5. The method according to claim 4 ,wherein in said step (a),a plurality of steps including said step are formed, andeach of said steps includes a curved surface with a radius of curvature ranging from 300 μm to 1800 μm.6. The method according to claim 4 ,wherein in said step (a),said step includes a sloped portion and a flat portion, andsaid curved surface is formed at least at a boundary between said sloped portion and said flat portion.7. The method according to claim 5 ,wherein in said step (a), said step closer to said center portion is formed by a grinding wheel less coarse than a grinding wheel used for forming ...

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Номер записи: 94
24-05-2018 дата публикации

A METHOD AND SYSTEM FOR MACHINING, AND A ROBOT SYSTEM

Номер: US20180141184A1
Автор: Cheng Shaojie, Dong Diamond Daimeng, MAO Lei
Принадлежит:

The present invention discloses a method and system for machining a work piece by a machining tool, and a robot system using the same. The method comprises: defining a customized contact point on the machining tool by setting a contact point height of the machining tool; moving the machining tool against the work piece to apply predefined machining feeds. Compared with the existing prior arts, the proposed method and system improves machining efficiency and accuracy. With the method and system according to the present disclosure, high machining efficiency could be achieved as well as collisions could be avoided. 1. A method for machining a work piece by a machining tool , comprising:defining a customized contact point on the machining tool by setting a contact point height of the machining tool;moving the machining tool against the work piece to apply predefined machining feeds.2. The method according to claim 1 , which further comprises:checking a feasibility of the contact point height in a virtual environment, to make sure there is no gouge or collision in its machining path; andadjusting the contact point height if failing to pass the checking.3. The method according to claim 1 , wherein:the contact point height is configured to be changeable in one machining path.4. The method according to claim 1 , which further comprises:controlling the feed rate of the machining tool to be constant when changing the contact point height of the machining tool.5. The method according to claim 4 , wherein:the machining tool is in a revolving shape.6. The method according to claim 5 , which further comprises:{'sub': 'default', 'generating a default contact diameter (CD) of the machining tool;'}{'sub': 'default', 'generating a default movement speed (MS) of the machining tool;'}{'sub': 'default', 'generating a default revolution speed of spindle (RS) of the machining tool;'}{'sub': 'actual', 'calculating the actual contact diameter (CD) in accordance with the customized contact ...

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Номер записи: 95
04-06-2015 дата публикации

Polishing apparatus and polishing method

Номер: US20150151398A1
Автор: Atsushi Yoshida, Masaya Seki, Masayuki Nakanishi, Naoki Matsuda, Tetsuji Togawa
Принадлежит: Ebara Corp

The polishing apparatus has a polishing unit capable of polishing a peripheral portion of the substrate to form a right-angled cross section. The polishing apparatus includes: a substrate holder that holds and rotates the substrate; guide rollers that support a polishing tape; and a polishing head having a pressing member that presses an edge of the polishing tape against the peripheral portion of the substrate from above. The guide rollers are arranged such that the polishing tape extends parallel to a tangential direction of the substrate and a polishing surface of the polishing tape is parallel to a surface of the substrate. The substrate holder includes: a holding stage that holds the substrate; and a supporting stage that supports a lower surface of the peripheral portion of the substrate in its entirety. The supporting stage rotates in unison with the holding stage.

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Номер записи: 96
14-08-2014 дата публикации

METHOD OF MACHINING OPPOSITE ENDS OF ROD MEMBERS

Номер: US20140227946A1
Автор: Makino Yosuke, OKAMURA Yuji
Принадлежит: NITTAN VALVE CO., LTD.

A method of efficiently cutting and machining opposite ends of rod members in sequence is provided, which comprises steps of: abutting a grinding wheel () against the periphery of a long rod material () placed at a predetermined work position; moving the grinding wheel towards and along the axis of a first portion of the long rod material () in rotation to taper the tail end of the first portion (to be provided as a rod member); and then moving the grinding wheel () further towards the axis of the rod material () to cut the first portion off the long rod material and at the same time chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel. After removing the first rod member cut off, the sequence of these steps is repeated as needed. 1. A method of machining opposite ends of round rod members , comprising steps of:moving a long round rod material to a predetermined work position;abutting a rotating disk-shaped grinding wheel on the periphery of the long round rod material in rotation;moving the grinding wheel towards, and along, the axis of the long rod material to chamfer a first portion of the long rod material on the front side the grinding wheel;cutting and chamfering the long rod material by moving the grinding wheel towards the axis of the long rod material at a predetermined position of the first portion to cut said first portion off the long rod material, and at the same time to chamfer the leading end of a second portion of the long rod material in contact with the rear side of the grinding wheel;moving the chamfered second portion of the long rod material to the work position after removing the first cut portion away from the work position; andrepeating the above-mentioned steps as needed.2. The method according to claim 1 , wherein:the step of chamfering the first portion is performed to taper that portion by moving, towards and along the axis of the rod material in rotation, the periphery ...

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Номер записи: 97
15-09-2022 дата публикации

METHOD FOR GRINDING SINGLE-CRYSTAL DIAMOND

Номер: US20220288741A1
Автор: Lu Jing, LUO Qiufa, MA Zhongqiang, WANG Yanhui, XU Xipeng
Принадлежит:

Carbon atoms of a single-crystal diamond and active abrasives are used to produce a chemical reaction to form carbides under a specific grinding condition of no higher than a graphitization temperature, and a hard abrasive is used to remove the carbides. 1. A method for grinding a single-crystal diamond , comprising:(1) mixing a base material, an active abrasive, and a hard abrasive to obtain a first material, wherein the base material comprises at least one of ceramic, metal, or a metal-ceramic composite material, the active abrasive comprises a first abrasive configured to react with the single-crystal diamond to form at least one carbide, the hard abrasive comprises a second abrasive configured to remove the at least one carbide, a mass ratio of the active abrasive and the hard abrasive is 1-5:10, a mass ratio of the base material and a sum of the hard abrasive and the active abrasive is 1-2:2;(2) mixing the first material obtained in step (1) and at least one additive to obtain a second material, and sieving the second material;(3) adding a wetting agent into the second material obtained in step (2), molding under pressure to obtain a compact, and sintering the compact to obtain a grinding wheel; controlling a grinding temperature of surfaces of the active abrasive in the grinding wheel and the single-crystal diamond by controlling a revolution speed of the grinding wheel to enable the grinding temperature to be lower than a graphitization temperature of the single-crystal diamond to ensure that the single-crystal diamond is reacted to form the at least one carbide and to avoid graphitization, so that a hardness of the single-crystal diamond decreases; and', 'grinding and removing the at least one carbide by the hard abrasive in the grinding wheel to finally obtain the single-crystal diamond., '(4) fixing the grinding wheel and the single-crystal diamond to a grinding machine, and grinding a surface of the single-crystal diamond in combination with a grinding ...

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Номер записи: 98
07-05-2020 дата публикации

VARIABLE SIZE WHEEL DEBURRING DEVICE

Номер: US20200139504A1
Автор: Guo Jiandong, LI Xueqiang, XUE Bowen
Принадлежит:

The present invention discloses a variable size wheel deburring device, which is composed of a lower lifting system, a central brush driving system, a brush system I, a brush system II and a clamping driving system. When used, the servo electric cylinder II, through the guiding rail II, causes the left and right rollers to clamp the lower wheel rim of the wheel; and the servo motor I can achieve the rotation of the clamped wheel by the pulley I, the pulley II and the synchronous belt I. The device according to the present invention in use can not only realize the burr removal of the wheel center hole, the flange root corner, the spoke edge and the rim corner, but also can adapt to wheel types of different size. 1the lower lifting system comprises: the four guiding posts I are fixed between the upper and lower bottom plates of the frame; the four guiding sleeves I cooperating with the guiding posts I are fixed on the lifting plate II; the two cylinders I are fixed on the bottom plate of the frame, and the output ends thereof are hinged to the lower part of the lifting plate II; the four guiding posts II are fixed below the lifting plate I, and the four guiding sleeves II cooperating with the guiding post II are fixed on the lifting plate II; the two servo electric cylinders I are fixed below the lifting plate II, and the output ends thereof are hinged to the lower part of the lifting plate I; the fixing frame I and the fixing frame II are fixed above the lifting plate I; the supporting frame I is mounted above the lifting plate I through the guiding rail I; and the supporting frame II is also mounted above the lifting plate I through the guiding rail III;the central brush driving system comprises: the bearing pedestal I is fixed below the lifting plate II; the spline sleeve I is mounted inside the bearing pedestal I through a bearing; the pulley IV is fixed below the spline sleeve I; the spline below the spline shaft is matched with the spline sleeve I; the cylinder ...

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Номер записи: 99
07-05-2020 дата публикации

WHEEL WEIGHT-REDUCING PIT CLEANING DEVICE

Номер: US20200139505A1
Автор: Guo Jiandong, KONG Decai, XUE Bowen
Принадлежит:

A wheel weight-reducing pit cleaning device comprises the lower lifting driving system, the side brush system, the ring brush unit, the ring brush system, the clamping driving system, the pressing system, The present disclosure in use is capable of cleaning and removing the burrs on the edges of the drain groove and the weight loss groove at the wheel weight-reducing pit. 11234567891011121314151617181920212223242526272829303132333435363738394041424344454647484950515253545556575859606162636465666768697071727374757677787980818283848586878889909192939495969798{'b': 4', '5', '2', '4', '13', '98', '5', '13', '17', '13', '16', '17', '15', '16', '7', '15', '10', '16', '19', '16', '18', '19', '9', '13', '12', '10', '12', '11', '8', '15', '97', '13', '96', '8', '96', '95', '14', '13', '3', '14', '6', '6', '7', '20', '7, 'the lower lifting driving system comprises: the four lower guiding sleeves I are fixed below the lower fixing plate I ; the four lower guiding posts I matching with the four lower guiding sleeves I are fixed below the lower lifting plate I ; the two lower cylinders II are also fixed on the fixing plate I , and the output end thereof is hinged to the lower part of the lower lifting plate I ; the bearing pedestal I is fixed above the lower lifting plate I ; the hollow shaft is mounted inside the bearing pedestal I through a bearing; the spline sleeve is mounted inside the hollow shaft through a bearing; the spline shaft is matched with the spline sleeve ; the pulley II is fixed below the hollow shaft ; the guard plate is mounted on the top end of the hollow shaft through the ball bowl ; the material of the portion of the guard plate corresponding to the position of the wheel weight-reducing pit is removed, and the machining part of the wheel flange surface is protected; the lower servo motor I is fixed on the left side below the lower lifting plate I through a transition flange, and the output end thereof is fixed with the pulley III ; the pulley II and the ...

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Номер записи: 100