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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2795. Отображено 100.
26-04-2012 дата публикации

Chemical looping air separation unit and methods of use

Номер: US20120100055A1
Автор: Justin M. Weber
Принадлежит: Individual

The disclosure provides for oxygen separation from air by utilizing an initial oxygen carrier which undergoes an endothermic reduction reaction to produce a carrier product and gaseous oxygen. The gaseous oxygen is withdrawn, and the carrier product is subsequently further reduced with a fuel in a combustion process, releasing heat and generating a oxygen acceptor. The oxygen acceptor is oxidized in an exothermic reaction. The method thus couples the exothermic oxidation reaction, the endothermic reduction reaction, and the chemical energy supplied by the fuel for a net heat release. In an embodiment, the initial oxygen carrier is CuO, the carrier product is Cu 2 O, and the oxygen acceptor is Cu.

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01-11-2012 дата публикации

Synthesis of Nanoparticles by Means of Ionic Liquids

Номер: US20120275991A1

A method for producing nanoscale particles by means of ionic liquids produces highly crystalline particles. The ionic liquids can be easily regenerated.

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04-04-2013 дата публикации

METHOD OF MAKING NANOMATERIAL AND METHOD OF FABRICATING SECONDARY BATTERY USING THE SAME

Номер: US20130084238A1

Disclosed are a method of making a nanomaterial and a method of fabricating a lithium secondary battery using the same. The method of making a nanomaterial includes preparing a mixed solution including a metal salt aqueous solution and an alkylamine, and hydrothermally treating the mixed solution. 1. A method of making a nanomaterial comprising:preparing a mixed solution comprising a metal salt aqueous solution and an alkylamine; andhydrothermally treating the mixed solution.2. The method of making a nanomaterial of claim 1 , wherein the metal salt comprises a chloride claim 1 , a sulfate claim 1 , a nitrate claim 1 , and a combination thereof.3. The method of making a nanomaterial of claim 1 , wherein the metal salt comprises a copper salt claim 1 , a nickel salt claim 1 , a lead salt claim 1 , or a combination thereof.4. The method of making a nanomaterial of claim 3 , wherein the metal salt comprises copper chloride (CuCl) claim 3 , copper sulfate (CuSO) claim 3 , or a combination thereof.5. The method of making a nanomaterial of claim 1 , wherein the metal salt and the alkylamine in the mixed solution are present in a mole ratio of about 3:1 to about 15:1.6. The method of making a nanomaterial of claim 1 , wherein the alkylamine comprises a compound represented by the following Chemical Formula 1 claim 1 , a compound represented by the following Chemical Formula 2 claim 1 , or a combination thereof:{'br': None, 'sub': 3', '2', 'm', '2, 'CH(CH)NH\u2003\u2003[Chemical Formula 1]'}{'br': None, 'sub': 2', '2', 'n', '2, 'NH(CH)NH\u2003\u2003[Chemical Formula 2]'}wherein, in the above Chemical Formula 1, m is an integer ranging from 7 to 20, and in the above Chemical Formula 2, n is an integer ranging from 4 to 20.7. The method of making a nanomaterial of claim 6 , wherein the alkylamine comprises decylamine claim 6 , dodecylamine claim 6 , tetradecylamine claim 6 , hexadecylamine claim 6 , octadecylamine claim 6 , or a combination thereof.8. The method of making a ...

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26-09-2013 дата публикации

METHOD FOR LEACHING COPPER FROM COPPER SULFIDE ORE

Номер: US20130247720A1
Автор: Manabe Manabu
Принадлежит: JX NIPPON MINING & METALS CORPORATION

The present invention provides a method of leaching copper from a copper sulfide ore, wherein operating costs and environmental impacts can be effectively reduced. The present invention is a method of leaching copper from a copper sulfide ore by a process of leaching a layer of stacked ores, wherein the leaching solution containing Fe (III) ion and other leaching solution containing iodide ion are fed through routes independent of each other to a layer of stacked ores containing a copper sulfide ore. 1. A method of leaching copper from a copper sulfide ore by a process of leaching a layer of stacked ores , wherein a leaching solution containing Fe (III) ion and other leaching solution containing iodide ion are fed through routes independent of each other to a layer of stacked ores containing a copper sulfide ore.2. A method of leaching copper from a copper sulfide ore according to claim 1 , wherein a major component of the ore containing the copper sulfide ore is chalcopyrite. The present invention relates to a method of leaching copper from a copper sulfide ore. Specifically, the present invention relates to a method of leaching copper effectively reducing operating costs and environmental impacts in leaching copper from stacked ore bodies by stacking a copper sulfide ore, and particularly a copper sulfide ore containing poorly soluble ores in mineral acids such as chalcopyrite and by feeding an acid from the top of the heap to leach copper.It has been known that in a hydrometallurgical process of copper, leaching of copper is significantly promoted by adding iodine or iodide ion and Fe (III) ion to the leaching solution in order to recover copper by leaching a poorly soluble copper sulfide ore in mineral acids such as chalcopyrite (Patent Literature 1).On the one hand, there is a problem of channeling phenomenon which causes only the flow paths of the leaching solution to be leached in the process of leaching copper. In contrast, when iodine, being a simple ...

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13-02-2014 дата публикации

ZINC OXIDE PARTICLES, METHOD FOR PRODUCTION OF THE SAME, AND COSMETIC, HEAT RELEASING FILLER, HEAT RELEASING RESIN COMPOSITION, HEAT RELEASING GREASE, AND HEAT RELEASING COATING COMPOSITION COMPRISING THE SAME

Номер: US20140044971A1
Принадлежит: SAKAI CHEMICAL INDUSTRY CO., LTD.

It is an object of the present invention to provide zinc oxide particles which have excellent ultraviolet blocking performance and also excellent dispersibility, and therefore can be suitably used as an ultraviolet blocking agent for cosmetics. Provided are zinc oxide particles having a primary particle diameter of less than 0.1 μm, an aspect ratio of less than 2.5 and an oil absorption/BET specific surface area of 1.5 ml/100 mor less. 1. Zinc oxide particles having a primary particle diameter of less than 0.1 μm , an aspect ratio of less than 2.5 and an oil absorption/BET specific surface area of 1.5 ml/100 mor less.2. The zinc oxide particles according to claim 1 , which are obtained by aging zinc oxide fine particles in water in which a zinc salt is dissolved.3. The zinc oxide particles according to claim claim 1 , which have a total light transmittance of 20% or less at a wavelength of 310 nm claim 1 , a total light transmittance of 20% or less at a wavelength of 350 nm claim 1 , a parallel light transmittance of 70% or more at a wavelength of 500 nm and a parallel light transmittance of 70% or more at a wavelength of 700 nm.4. The zinc oxide particles according to claim 1 , which have an apparent density of 0.26 g/ml or more.5. The zinc oxide particles according to claim 1 , which have a sharpened gloss (20° gloss) of 110 or more as a coating film.61. A method for production of the zinc oxide particles according to claim claim 1 , comprising a step of aging zinc oxide fine particles in water in which a zinc salt is dissolved.7. A cosmetic comprising the zinc oxide particles according to claim 1 ,8. A heat releasing filler comprising the zinc oxide particles according to .9. A heat releasing resin composition comprising the zinc oxide particles according to .10. A heat releasing grease comprising the zinc oxide particles according to .11. A heat releasing coating composition comprising the zinc oxide particles according to .12. The zinc oxide particles according ...

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06-01-2022 дата публикации

SOLID-LIQUID-SOLID HYDROMETALLURGICAL METHOD FOR THE SOLUBILIZATION OF METALS FROM SULFIDE COPPER MINERALS AND/OR CONCENTRATES

Номер: US20220002838A1
Принадлежит: NOVA MINERALIS S.A.

The present invention relates to a solid-liquid-solid hydrometallurgical method in the presence of hydrated and/or non-hydrated salts in an oversaturation conditions, which is achieved by the intentional and repetitive application of drying and wetting steps, enhancing the chemical and physical phenomena on the mineral or concentrate, thus provoking the crystallization, re-crystallization, and release of copper in a non-stoichiometric decomposition of the sulfide and its subsequent precipitation with chloride. The invention is made up of 3 steps called: (a) Wetting, (b) Drying and Oversaturation, (c) Washing and re-wetting, and these are conducted at temperatures ranging from 20-40° C. regardless of the redox potential with a minimum consumption of water and acid without requiring the addition of oxygen. The method allows diminishing the water and acid consumption, since the transformation of the sulfide can be carried out only in the presence of hydrated salts and/or the minimal addition of acid and water. Furthermore, the present invention allows reducing the use of water in the agglomeration and/or agglomeration-curing step, as when the hydrated salt is mixed with the mineral, the water molecules of the hydrated salt wet the mineral, reducing the volume of water that shall be added in the steps of wetting and agglomeration and/or curing. 1. A Solid-Liquid-Solid hydrometallurgical method for the solubilization of metals from minerals and/or concentrates of sulfide minerals of primary and/or secondary origin containing them , wherein said method comprises the following sequential and/or overlapped steps:I. Wetting, wherein the mineral or concentrate is wetted by the addition of water or water-acid and hydrated and/or non-hydrated chloride salts;II. Drying and Oversaturation, wherein the wetted mineral is dried by vaporization and/or evaporation, which may be carried out both in the heap as in the conveyor belt, generating oversaturation conditions, crystallization ...

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07-01-2016 дата публикации

Metal Oxide Mesocrystal, and Method for Producing Same

Номер: US20160001268A1
Принадлежит: OSAKA UNIVERSITY

Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided. 1. A method for producing a metal oxide mesocrystal , the method comprising the step of maintaining an aqueous precursor solution comprising one or more metal oxide precursors , an ammonium salt , a surfactant , and water at 300 to 600° C.2. The method according to claim 1 , wherein the one or more metal oxide precursors are a metal nitrate and/or a metal fluoride salt.3. The method according to claim 1 , wherein the ammonium salt is NHNO.4. The method according to claim 1 , wherein the surfactant is at least one member selected from the group consisting of anionic surfactants claim 1 , cationic surfactants claim 1 , amphoteric surfactants claim 1 , and nonionic surfactants.5. The method according to claim 1 , wherein claim 1 , in the aqueous precursor solution claim 1 , the ratio of metal oxide precursor to surfactant is 1 to 1000:1 (molar ratio) claim 1 , and the ratio of ammonium salt to surfactant is 1 to 1000:1 (molar ratio).6. (canceled)7. A mesocrystal consisting of at least one member selected from the group consisting of claim 1 , nickel oxide claim 1 , iron oxide claim 1 , cobalt oxide claim 1 , zirconium oxide claim 1 , and cerium oxide claim 1 , the mesocrystal having a specific surface area of 0.5 m/g or more and an average width of 0.01 to 1000 μm.8. (canceled)9. A mesocrystal consisting of nanoparticles of two or more metal oxides.10. The mesocrystal according to claim 9 , which has a specific surface area of 0.5 m/g or more.11. (canceled)12. The mesocrystal according to claim 9 , wherein the metal oxide nanoparticles consist of two or more ...

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01-01-2015 дата публикации

BIS(TRIMETHYLSILYL) SIX-MEMBERED RING SYSTEMS AND RELATED COMPOUNDS AS REDUCING AGENTS FOR FORMING LAYERS ON A SUBSTRATE

Номер: US20150004314A1
Принадлежит:

A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2-12 of the Periodic Table, the lanthanides, As, Sb, Bi, Te, Si, Ge, Sn, and Al. 2. The method of wherein R claim 1 , R claim 1 , R are each independently Calkyl; R claim 1 , R claim 1 , R claim 1 , Rare each independently H or Calkyl; and Rand Rare H.4. The method of wherein R claim 3 , R claim 3 , R are each independently Calkyl; R claim 3 , R claim 3 , R claim 3 , Rare each independently H or Calkyl; and R claim 3 , and Rare H.6. The method of wherein the atom is in a positive oxidation state of 1 claim 1 , 2 claim 1 , 3 claim 1 , 4 claim 1 , 5 claim 1 , or 6.7. The method of wherein R claim 1 , R claim 1 , R claim 1 , and Rare each independently hydrogen claim 1 , methyl claim 1 , ethyl claim 1 , n-propyl claim 1 , isopropyl claim 1 , n-butyl claim 1 , sec-butyl claim 1 , isobutyl claim 1 , t-butyl claim 1 , or phenyl.8. The method of wherein R claim 1 , R claim 1 , and R are each independently hydrogen claim 1 , methyl claim 1 , ethyl claim 1 , n-propyl claim 1 , isopropyl claim 1 , n-butyl claim 1 , sec-butyl claim 1 , isobutyl claim 1 , t-butyl claim 1 , or phenyl.9. The method of wherein the atom is Cu claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ti claim 1 , or Ni.10. The method of comprising a deposition cycle including:a) contacting a substrate with the vapor of the first compound having an atom in an oxidized state to form a first modified surface; andc) contacting the first modified surface with the vapor of the reducing agent.11. The method of wherein a metal-containing layer is deposited on the substrate.12. The method of wherein the metal-containing layer includes a metal atom in the zero oxidation state.14. The method of wherein ...

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14-01-2021 дата публикации

CRYSTAL-ORIENTATION CONTROLLED COMPLEX

Номер: US20210008525A1
Принадлежит: FURUKAWA ELECTRIC CO., LTD.

A crystal-orientation controlled complex comprising a connected assembly having a thin film shape, in which a plurality of crystal pieces are connected with each other, the crystal pieces having a flake shape and having a main surface and an end surface, wherein the main surface has a crystal orientation relative to a specific crystal plane, and the thin film shaped connected assembly has a polarization singularity. 1. A crystal-orientation controlled complex comprising:a connected assembly having a thin film shape, in which a plurality of crystal pieces are connected with each other, the crystal pieces having a flake shape and having a main surface and an end surface, whereinthe main surface has a crystal orientation relative to a specific crystal plane, andthe thin film shaped connected assembly has a polarization singularity.2. The crystal-orientation controlled complex according to claim 1 , wherein the crystal piece is a nanocrystal piece.3. The crystal-orientation controlled complex according to claim 1 , wherein the crystal plane is an alternately stacked plane of atoms and a close-packed plane of atoms.4. The crystal-orientation controlled complex according to claim 2 , wherein the crystal plane is an alternately stacked plane of atoms and a close-packed plane of atoms.5. The crystal-orientation controlled complex according to claim 1 , wherein the main surface forms a surface of the connected assembly.6. The crystal-orientation controlled complex according to claim 2 , wherein the main surface forms a surface of the connected assembly.7. The crystal-orientation controlled complex according to claim 3 , wherein the main surface forms a surface of the connected assembly.8. The crystal-orientation controlled complex according to claim 4 , wherein the main surface forms a surface of the connected assembly.9. The crystal-orientation controlled complex according to claim 1 , wherein the main surface has higher catalytic activity than the end surface.10. The ...

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19-01-2017 дата публикации

DIRECT CONTACT HEAT TRANSFER IN THE THERMOLYSIS REACTOR OF HYDROGEN PRODUCTION Cu-Cl CYCLE

Номер: US20170015552A1
Принадлежит:

In the thermochemical water splitting process by Cu—Cl cycle, oxygen gas is produced by a thermolysis process in a three-phase reactor. IN accordance with the teachings herein, a technique is provided to achieve the high challenging thermal requirements of the thermolysis reactor, whereby an optimized heat transfer configuration is used. The technique involves using some of the pre-heated stoichiometric oxygen gas produced from the thermolysis reaction, to transfer heat directly to the slurry of molten CuCl and solid CuOClinside the thermolysis reactor. Experiments were performed to examine the volumetric heat transfer coefficient for the direct contact heat transfer between the gas and the slurry. It was found that the thermal scale up analysis of the thermolysis reactor with direct contact heat transfer, is based on the amount of heat carried by the oxygen gas rather than the amount of heat transferred by direct contact heat transfer. 1. A thermolysis reactor for the thermochemical Cu—Cl cycle of hydrogen production , wherein the thermolysis reactor comprises:a housing;an inlet on a first portion of the housing for receiving copper oxychloride solid particles;reaction chamber within the housing for facilitating the thermochemical Cu—Cl cycle where the copper oxychloride solid particles thermally decompose into oxygen gas and molten cuprous chloride;at least one gas outlet on a second portion of the housing for expelling the oxygen gas; anda return pathway having a heating element for heating a portion of the expelled oxygen gas and an injection element coupled to an inlet on a bottom portion of the housing for injecting the heated oxygen gas into the reaction chamber to provide further heating for the thermochemical Cu—Cl cycle.2. The thermolysis reactor of claim 1 , wherein the heating element comprises a heat exchanger and the injection element comprises a gas sparger.3. The thermolysis reactor of claim 1 , wherein the expelled oxygen gas is stoichiometric high ...

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19-01-2017 дата публикации

Copper Oxide Infrared Pigment

Номер: US20170015836A1
Принадлежит:

Copper oxide particles having particular starting size and surface area characteristics can be processed by heat and milling to achieve sizes and particle size distributions that give the copper oxide properties as an infrared reflective pigment without addition of other metals or oxides. 124-. (canceled)25. A method of preparing an infrared reflective copper oxide pigment , comprising: [{'sub': '10', 'i. Dparticle size of 0.25-2 microns,'}, {'sub': '50', 'ii. Dparticle size of 0.5-6 microns,'}, {'sub': '90', 'iii. Dparticle size of 1-30 microns,'}, 'iv. span ΔD of 1-12,', {'sup': '2', 'v. specific surface area of 5-50 m/g,'}, 'vi. a crystallite size of 1-19.5 nanometers,', 'vii. when present in an alkyd melamine paint, exhibit a total solar reflectance over black of less than 17,, 'a. providing starting copper oxide particles that are at least 99% pure CuO and have the following characteristicsb. heating the copper oxide particles at a temperature of 900° F. to 1600° F., for a time of 1-1000 minutes, [{'sub': '10', 'i. Dparticle size of 0.3-2 microns,'}, {'sub': '50', 'ii. Dparticle size of 0.6-3 microns,'}, {'sub': '90', 'iii. Dparticle size of 0.9-5 microns,'}, 'iv. span ΔD of 0.7-3.0,', {'sup': '2', 'v. specific surface area of 2-10 m/g,'}, 'vi. a crystallite size of 19.6-42 nanometers,', 'vii. when present in an alkyd melamine paint, exhibit a total solar reflectance over black of 17 or greater, and', 'viii. has a tint-strength of 60% to 150% relative to V-774 pigment when used in polyvinyl chloride., 'c. milling the copper oxide particles sufficiently to produce finished copper oxide particles having the following characteristics26. The method of claim 25 , wherein the starting copper oxide particles have a specific surface area of 22-39 m/g.27. The method of claim 25 , wherein the starting copper oxide particles exhibit at least one characteristic selected from the group consisting of:{'sub': '10', 'a. Dparticle size of 0.3-1.5 microns,'}{'sub': '50', 'b. ...

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21-01-2016 дата публикации

PREPARING LAYERED DOUBLE HYDROXIDE NANOSTRUCTURES

Номер: US20160016811A1
Автор: Rahmani Nezhad Cobra
Принадлежит:

Provided is a method for manufacturing nanostructured layered double hydroxides (LDHs) having a uniform size distribution with homogenous nano-disc morphology. Disclosed method has three main steps of: pretreatment of metal wires; wire-explosion in a liquid phase; and finally, centrifugation and drying the as-prepared colloidal products to obtain the LDHs nanostructured dried powder. 1. A method for preparation of a nanostructured layered double hydroxide (LDH) by electrical wire explosion , method comprising steps of: thinning the metal wires,', 'staining the metal wires with a staining material, and', 'twisting the metal wires;, 'preparing metal wires byexploding the prepared metal wires in a liquid phase; andcentrifugation and drying a colloidal product obtained in the exploding step.2. The method according to claim 1 , wherein:the metal wires include two metal wires, andthe thinning the two metal wires include thinning the two metal wires using a Durston-rolling-mill and draw-plates device.3. The method according to claim 1 , wherein the thinning the metal wires include thinning the metal wires to a diameter of about 0.1 mm.4. The method according to claim 1 , wherein the staining the metal wires includes staining the metal wires via a spraying device.5. The method according to claim 1 , wherein the staining the metal wires includes staining the metal wires by submerging the wires in a staining material.6. The method according to claim 1 , wherein the staining the metal wires includes staining the metal wires by drawing the metal wires through a staining material.7. The method according to claim 4 , wherein the staining material is selected from a group consisting of a drawing oil claim 4 , a lubricant material claim 4 , a paraffin claim 4 , a natural oil claim 4 , or mixtures thereof.8. The method according to claim 1 , wherein the staining and twisting steps are carried out consecutively or simultaneously.9. The method according to claim 1 , wherein:the metal ...

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16-01-2020 дата публикации

THIN-FILM-LIKE COMPOSITE OF NANOCRYSTAL

Номер: US20200017367A1
Принадлежит: FURUKAWA ELECTRIC CO., LTD.

An object of the present disclosure is to provide a thin-film-like composite of nanocrystal, as a nanocrystalline material having excellent handling properties, which can overcome the above-mentioned problems of a nanocrystalline material having a powdery form while satisfactorily maintaining the properties of the nanocrystalline material (e.g., excellent catalytic activity). A thin-film-like composite of nanocrystal, characterized in that the thin-film-like composite of nanocrystal includes a thin-film-like connected assembly in which a plurality of nanocrystalline pieces each having a flake-like form and having a main surface and an end surface are connected to each other, the main surfaces of the plurality of nanocrystalline pieces exposed to the outside of the connected assembly are arranged so as to form gaps therebetween, and the connected assembly has a plan view area of 1 mmor more. 1. A thin-film-like composite of nanocrystal , characterized in thatthe thin-film-like composite of nanocrystal comprises a thin-film-like connected assembly in which a plurality of nanocrystalline pieces each having a flake-like form and having a main surface and an end surface are connected to each other,the main surfaces of the plurality of nanocrystalline pieces exposed to the outside of the connected assembly are arranged so as to form gaps therebetween, and{'sup': '2', 'the connected assembly has a plan view area of 1 mmor more.'}2. The thin-film-like composite of nanocrystal according to claim 1 ,wherein:the nanocrystalline pieces each have a thickness of 0.5 to 100 nm; anda minimum size of the main surface is 10 times or more the thickness.3. The thin-film-like composite of nanocrystal according to claim 1 , wherein the plan view area is 100 mmor more.4. The thin-film-like composite of nanocrystal according to claim 1 , wherein the thin-film-like composite of nanocrystal has a specific surface area of 5 m/g or more.5. The thin-film-like composite of nanocrystal according ...

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21-01-2021 дата публикации

LATENT HEAT STORAGE COMPOSITE HAVING NETWORK OF PROTECTIVE NANOSTRUCTURES

Номер: US20210017435A1

The present disclosure relates to a novel high-performance latent heat storage composite manufactured by forming a network of protective nanostructures on the surface of a metal material having high thermal conductivity. Through a low volume content of a network having high thermal conductivity, high-density heat capacity may be secured. In addition, through use of a metal-based material having high thermal conductivity, thermal conductivity may be increased by about 7 times compared to a conventional pure phase change material. 1. A latent heat storage composite , comprising:a flexible and foldable metal mesh;a network of thermally conductive metal oxide structures formed on the metal mesh; anda phase change material for applying the metal oxide structures.2. The latent heat storage composite according to claim 1 , wherein the metal mesh is a copper (Cu) mesh claim 1 , an aluminum (Al) mesh claim 1 , a nickel (Ni) mesh claim 1 , a titanium (Ti) mesh claim 1 , or a stainless steel mesh.3. The latent heat storage composite according to claim 1 , wherein the metal mesh is folded to have a shape created by combining one or more selected from the group consisting of a wave shape claim 1 , a zigzag shape claim 1 , a spiral shape claim 1 , and a donut (co-annular) shape.4. The latent heat storage composite according to claim 1 , wherein the metal oxide structures are porous metal oxide nanowire structures applied to the metal mesh.5. The latent heat storage composite according to claim 1 , wherein the phase change material has a lower melting point than the metal mesh.6. The latent heat storage composite according to claim 5 , wherein the phase change material comprises organic phase change materials and molten salt-based claim 5 , nitrate-based claim 5 , chloride-based claim 5 , or carbonate-based salt compound phase change materials.7. The latent heat storage composite according to claim 1 , wherein the latent heat storage composite controls thermal diffusion depending ...

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21-01-2021 дата публикации

Copper oxide nanosensor

Номер: US20210018455A1

A system and method of nanoparticle deposition for achieving an acetone sensitive response based on ruthenium decorated CuO nanowires at temperatures of 200° C. and 250° C. is disclosed. This method is useful for building sensors. The method used to build the sensor is easily integrable into silicon technology broadly, and into a CMOX compatible device specifically. Additionally, it is expected that this method of nanoparticle deposition can be transferred to other MOx nanowire sensors, such as but not limited to zinc oxide nanowire.

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22-01-2015 дата публикации

NOVEL PROCESS OF PREPARING NANO METAL AND THE PRODUCTS THEREOF

Номер: US20150024204A1
Принадлежит:

The present invention relates a process of preparing a nanopowder by using a natural source starting material wherein the nano powder is a nano metal or nano alloy or nano metal oxide or nano metal carbide or nano compound or nano composite or nanofluid. The nano product produced by the process has novel properties such as enhanced hardness, antibacterial properties, thermal properties, electrical properties, abrasive resistant, wear resistant, superior frictional properties, sliding wear resistance, enhanced tensile strength, compression strengths, enhanced load bearing capacity and corrosion properties. By virtue of this process the products produced are usable in preparation of thermal fluids, anti-fungal/bacterial/fouling coatings, paints, high strength electrical conductors, high corrosion resistant coatings and alloys, inkjet inks, neutralizing gram positive bacteria, neutralizing gram negative bacteria, motor cycle clutch, rocker arm, solder materials, bearing applications, spring materials, automobile parts, steering wheel joints and coatings, connecting rod, memory enhancing devices, hard disks, pen drives, electronic chips, smart materials, shape memory alloys, add-on materials for composite lamina or laminates of any number. 1. A novel process of preparing metal nano powders using a natural ingredient selected from the group comprising of herbal extracts , plant extracts , water , milk or milk products , comprising the steps ofa. combining the natural ingredient with a metal salt in a metal containerb. allowing the nano powder to form and depositc. obtaining the nano powder2. The process as claimed in claim 1 , wherein the nano powder is a metal nano powder or alloy nano powder.3Curcuma aromatic, Alpiniacalcarta, Indigiferatinctoria, Spilanthusacmella, Pelargonium gravcolens, Mirabilis jalapa, Withanaisomnifera, Bacopamonnuri, Centellaasiastica, Rauvolfia serpentine, Acoruscalamus, Andrographispaniculata, Zingiberofficinale Cissusrepens, Apiumgraveolens, ...

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10-02-2022 дата публикации

SOLID-LIQUID-SOLID METHOD FOR THE SOLUBILISATION OF COPPER MINERALS AND CONCENTRATES, INDEPENDENT OF THE REDOX POTENTIAL AND WITH LOW CONSUMPTION OF WATER AND ACID

Номер: US20220042139A1
Принадлежит: NOVA MINERALIS S.A.

The present invention relates to a chemical and physical hydrometallurgical method with solid-liquid-solid interaction for the solubilization of copper sulphides, by Selective Transformation and Precipitation of soluble, chlorinated, copper species, where said method does not depend on the redox potential and can be carried out in a wide range of pH under conditions of salts supersaturation, which is a condition that is generated by periods of non-irrigation, from ores or copper concentrates, mainly primary sulphides, such as chalcopyrite comprising said copper. This method is composed of 3 steps, called “Moistening and Solvation Step”, “Selective Transformation and Precipitation Step” and “Acid-Chlorinated Washing step”, wherein said method does neither require the addition of oxidizing or reducing agents, nor oxygen. Furthermore, the steps of the method can be applied only with the presence of water, where acid addition is not required. On the other hand, the repetitions of the steps of the method potentiate the physical effects on the ore or concentrate through the phenomena of haloclasty and crystallization of salts. The invention can also be applied to sulphide base metals such as nickel, zinc, cobalt, lead, molybdenum, among others, independently of the usual impurities of the sulphide ores, as occurs with the presence of arsenic. 1. A method for the solubilization of metals from ores and/or concentrates of sulphide ores of primary and/or secondary origin comprising said metals , wherein said method comprises the following sequential and/or overlapped steps:I. Moistening and Solvation, which corresponds to a step in a non-oxidative environment, where the ore or concentrate is moisten by the addition of water or acid-water, chloride salts, without adding oxidizing or reducing agents, wherein this step includes the contact of the ore or concentrate with recirculating solutions of the same process that may contain chloride, iron and copper ions, in an unsaturated ...

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26-01-2017 дата публикации

Cupric oxide semiconductors

Номер: US20170025555A1
Принадлежит: TUFTS UNIVERSITY

A method of preparing a cupric oxide semiconductor. The method includes providing a substrate having a first surface, forming a cuprous oxide layer on the first surface, converting the cuprous oxide layer into a cupric oxide layer via an oxidation reaction, and depositing additional cupric oxide on the cupric oxide layer, which serves as a seed layer, to yield a cupric oxide film, thereby obtaining a cupric oxide semiconductor. Also disclosed are a cupric oxide semiconductor thus prepared and a photovoltaic device including it.

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04-02-2021 дата публикации

METHOD FOR RECOVERING Cu AND METHOD OF PREPARING ELECTROLYTIC COPPER

Номер: US20210032722A1
Автор: FUKANO Yuken
Принадлежит: JX NIPPON MINING & METALS CORPORATION

Providing a method of recovering Cu from copper ore containing Hg. A method for recovering Cu from copper ore, the method comprising: (A) providing copper ore containing Hg with an amount of 0.2 ppm or more; (B) treating the copper ore to leach Cu and Hg with use of solution containing iodide ions and Fe (3+); and (C) treating post-leaching solution with activated carbon to absorb the iodide ions and Hg. 1. A method for recovering Cu from copper ore , the method comprising:(A) providing copper ore containing Hg with an amount of 0.2 ppm or more;(B) treating the copper ore to leach Cu and Hg with use of solution containing iodide ions and Fe(3+); and(C) treating post-leaching solution with activated carbon to absorb the iodide ions and Hg.2. The method of claim 1 , further comprising treating the activated carbon with sulfurous acid and/or salt thereof.3. The method of claim 2 , further comprising reusing the activated carbon that has been treated with sulfurous acid and/or salt thereof for the step (C).4. A method of preparing electrolytic copper comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'obtaining post-leaching solution containing Cu according to ; and'}smelting electrolytic copper from the post leaching solution.5. A method of preparing electrolytic copper comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'obtaining post-leaching solution containing Cu according to ; and'}smelting electrolytic copper from the post leaching solution.6. A method of preparing electrolytic copper comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'obtaining post-leaching solution containing Cu according to ; and'}smelting electrolytic copper from the post leaching solution. The present invention is related to a method for recovering Cu and a method of preparing electrolytic copper. In particular, the present invention is related to a method for recovering Cu by leaching Cu from copper ore, and a method of preparing electrolytic copper using the ...

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05-02-2015 дата публикации

SIMPLE LOW ENERGY PROCESS FOR THE SEPARATION OF ZINC AND COPPER FROM AN AMMONIACAL SOLUTION

Номер: US20150037230A1
Автор: Pignotti Louis
Принадлежит:

A method for selectively precipitating basic zinc carbonates (BZC) from basic copper carbonates (BCC) from an aqueous ammoniacal solution prepared using a mixture of copper- and zinc-containing materials. 1. A process for providing basic zinc carbonate and basic copper carbonate comprising:(a) providing an aqueous solution of zinc (II), copper (II), an amine, and carbonic acid in a first reaction vessel;(b) adjusting the pH of the aqueous solution until basic zinc carbonate is formed, wherein the pH of the solution is adjusted by increasing or decreasing the carbonic acid concentration at a controlled rate;(c) recovering the basic zinc carbonate from the aqueous solution by filtration;(d) transferring the aqueous solution which remains after recovery of basic zinc carbonate in step (c) into a second vessel;(e) further adjusting the pH of the transferred aqueous solution until basic copper carbonate is formed; and(f) recovering the basic copper carbonate from the transferred aqueous solution by filtration2. The method of claim 1 , further comprising the steps of:(g) transferring the aqueous solution which remains after the recovery of basic copper carbonate in step (f) into a third vessel;(h) removing carbon dioxide from the aqueous solution which remains after the recovery of basic copper carbonate in step (f);(i) introducing a zinc metal- and copper metal-containing material into the aqueous solution which remains after the removal of carbon dioxide in step (h);(j) oxidizing the zinc metal- and copper metal-containing material to provide a replenished zinc (II) and copper (II) aqueous solution; and(k) introducing the replenished zinc (II) and copper (II) solution into the first reaction vessel.3. The continuous method of claim 1 , wherein the amine is ammonium hydroxide.4. The continuous method of claim 1 , wherein the pH is adjusted by increasing or decreasing the carbonic acid concentration.5. The continuous method of claim 4 , wherein during step (b) the rate at ...

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05-02-2015 дата публикации

SOLUTION REACTION APPARATUS AND SOLUTION REACTION METHOD USING THE SAME

Номер: US20150037244A1
Принадлежит:

The present invention relates to a solution reaction apparatus and solution reaction method using the same, and more particularly a solution reaction apparatus and a solution reaction method using the same, wherein a reaction vessel is made by using a sealing member, a reaction vessel forming member, and a substrate serving as the bottom part of the reaction vessel so as to cause one side of a reaction solution only to contact the solution, thereby adjusting the temperature of the substrate differently from the temperature of the solution. The solution reaction apparatus of the present invention can control temperature of the substrate and temperature of the reaction solution separately, thereby it can control the temperature of the solution above the boiling point of the solution, and can react the solution while constantly maintaining the concentration of the solution by the solution circulatory device. Accordingly, it has an effect of freely forming various nanostructures on the substrate. 1. A solution reaction apparatus , which comprises:a substrate;a sealing member laminated on one side of the substrate;a reaction vessel forming member being laminated on the sealing member and forming a reaction vessel, which can contain reaction solution for solution reaction, using the substrate as a bottom part; anda reaction solution circulatory part circulating the reaction solution into the reaction vessel, which is formed from the substrate, the sealing member and the reaction vessel forming member.2. The solution reaction apparatus according to claim 1 , wherein the substrate is selected from the group consisting of Si claim 1 , AlO claim 1 , GaN claim 1 , GaAs claim 1 , ZnO claim 1 , InP claim 1 , SiC claim 1 , glass and plastic substrates.3. The solution reaction apparatus according to claim 2 , wherein the plastic substrate is selected from the group consisting of polyethylene naphthalate (PEN) claim 2 , polyethylene terephthalate (PET) claim 2 , polyether sulfone ( ...

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01-05-2014 дата публикации

METHOD FOR MANUFACTURING MESOPOROUS MATERIALS, MATERIALS SO PRODUCED AND USE OF MESOPOROUS MATERIALS

Номер: US20140120021A1
Принадлежит: Nanologica AB

The present invention relates to a new synthetise for the preparation of mesoporous structures including mesoporous materials with chiral morphologies and mesoporous materials with local or surface chirality. The method can be used for manufacturing controlled drug delivery devices, for example for delivery of folic acid, and fluorescent particles. 1. A method for manufacturing ordered mesoporous materials with functional groups attached to inner surfaces of the pores , comprising:(A) forming a solution by dissolving a template comprising organic molecules forming Hoogsten-bonded supramolecular structures formed through hydrogen bonding and π-π interactions, wherein the organic molecules of the template comprise folic acid, at a temperature between 4° C.-100° C. and pH between 6-13;(B) dissolving an additive substance which is a co-structure directing agents (CSDA) having a primary role of assembling molecular groups in the template, in a molar ratio of from 0.02:1 to 1:1 with respect to the organic molecules of step (A), and at a temperature between 4° C.-100° C.;(C) mixing the solution with at least one inorganic precursor, wherein the inorganic precursor is one or more metal oxide precursors selected from the group consisting of Si, Al, Ti, Ni, Cu, Co, Fe, Ru and Rh;(D) solidifying the solution by a process where hydrolysis and condensation of the inorganic precursor can occur; and(E) removing at least part of the template by solvent extraction to form a porous material.236-. (canceled)37. A method according to claim 1 , wherein a co-structure directing agent capable of covalent or electrostatic interaction with the pore forming template is added in step A.38. A method according to claim 37 , wherein the co-structure directing agent is composed of a basic group such as an amine moiety bonded to an alkyl spacer which may vary in length claim 37 , and which bond to the inorganic precursor.39. A method according to claim 1 , wherein the metal oxide precursor is one ...

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17-02-2022 дата публикации

METHOD FOR RECOVERING RESOURCE FROM CIGS THIN-FILM SOLAR CELL

Номер: US20220052220A1
Принадлежит: National Tsing Hua University

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell. 1. A method for recovering a resource from a CIGS thin-film solar cell to be recycled , the method comprising steps of:{'claim-text': ['a front substrate,', 'a light absorbing unit disposed rearwardly of the front substrate, and having a CIGS photovoltaic layer which includes copper, indium, gallium, and selenide,', 'a first adhesive layer sandwiched between the front substrate and the light absorbing unit,', 'a rear substrate unit disposed rearwardly of the light absorbing unit, and including at least one rear substrate and a second adhesive layer, and', 'an electrical contact layer sandwiched between the light absorbing unit and the rear substrate unit, wherein a bonding force between the electrical contact layer and the light absorbing unit is smaller than a bonding force between the electrical contact layer and the rear substrate unit; and'], '#text': 'a) providing the CIGS thin-film solar cell which includes'}b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature lower than a brittleness temperature of the second adhesive layer such that the light absorbing unit is separated from the electrical contact layer as a result of a thermal strain produced between the electrical contact layer and the rear substrate unit.2. The method according to claim 1 , wherein claim 1 , in step b) claim 1 , the predetermined temperature is also lower than a brittleness temperature of the first adhesive layer so as to reduce a viscosity of the first adhesive layer claim 1 , thereby facilitating detachment of the front substrate from the light ...

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08-02-2018 дата публикации

GAS SENSOR DEVICE, GAS MEASURING EQUIPMENT, AND METHOD FOR FABRICATING GAS SENSOR DEVICE

Номер: US20180038822A1
Принадлежит: FUJITSU LIMITED

A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope. 1. A gas sensor device comprising:a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a fiat face and a steep slope.2. The gas sensor device as claimed in claim 1 , further comprising:a substrate over which the crystalline film of the copper(I) bromide is provided; anda layer containing copper oxide and positioned between the substrate and the crystalline film of the copper(I) bromide.3. The gas sensor device as claimed in claim 2 , further comprising:a pair of electrode films formed over the substrate,wherein the crystalline film of the copper(I) bromide overlaps the electrode films, and the layer containing copper oxide is positioned between the crystalline film of copper(I) bromide and the electrode films.4. The gas sensor device as claimed in claim 1 , further comprising:an electrode partially covered by the crystalline film of copper(I) bromide; anda layer containing copper oxide and positioned between the electrode and the crystalline film of the copper(I) bromide.5. The gas sensor device as claimed in claim 2 , wherein the layer containing copper oxide contains copper(I) oxide and copper(II) oxide.6. The gas sensor device as claimed in claim 5 , wherein the layer containing copper oxide contains the copper(II) oxide as a main part and has the copper(I) oxide in the vicinity of a top surface of the layer.7. The gas sensor device as claimed in claim 4 , wherein the layer containing copper oxide contains copper(I) oxide and copper(II) oxide.8. The gas sensor device as claimed in claim 7 , wherein the layer containing copper oxide contains the copper(II) oxide as a main part and has the copper(I) oxide in the vicinity of a top surface of the layer.9. The gas sensor device as claimed in claim 1 , wherein ...

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06-02-2020 дата публикации

METHOD AND/OR SYSTEM FOR SYNTHESIS OF ZINC OXIDE (ZnO)

Номер: US20200039836A1
Принадлежит:

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation. 111-. (canceled)12. An article comprising: a non-transitory storage medium having stored thereon instructions capable of being executed by at least one computing device , the at least one computing device including at least one processor and at least one memory; the at least one computing device to execute instructions on the at least one processor; the instructions to be executed having been fetched from the at least one memory for execution on the at least one processor , and the at least one computing device to store in the at least one memory of the at least one computing device any results to be generated from the execution on the at least one processor of the to be executed instructions;the instructions to be executed comprise instructions for execution of one or more sequences of operations in a fluid handling system (FHS) for a relatively low temperature aqueous solution zinc oxide growth system (ZGS) to perform pre-growth operations to prepare a ZGS at least for execution of a particular zinc oxide growth process formulation, the FHS a closed interconnected network and a control system to drive components of the interconnected network, the control system comprising the at least one computing device including at least one processor and at least one memory, wherein the at least one memory includes the non-transitory storage medium having the pre-growth instructions stored thereon;wherein the pre-growth operation instructions to be executed, as a result of execution, to:verify adequate fluid sealing of a fluid sealable chamber enclosure;fill an unpressured, empty vessel with zinc oxide growth solution to a fill level and pressurize the vessel after containing the zinc oxide growth solution; and/ortransfer the zinc oxide growth solution from the vessel to the ...

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16-02-2017 дата публикации

METHOD FOR MANUFACTURING HEXAGONAL PLATE-SHAPED ZINC OXIDE PARTICLES

Номер: US20170044022A1
Принадлежит:

A method of producing hexagonal plate-like zinc oxide particles having a sharp particle size distribution (i.e., a relatively uniform particle size) at a high weight yield and a high percent yield is provided. The method of producing hexagonal plate-like zinc oxide particles of the present invention comprises mixing by stirring an aqueous hexamethylenetetramine (HMT) solution, a solution of an anionic surfactant in a water-insoluble organic solvent, and optionally water to form a microemulsion containing an aqueous phase of an aqueous hexamethylenetetramine solution having a molar concentration of 0.05 M or more; dropwise adding an aqueous zinc salt solution to the microemulsion; and heating the microemulsion containing the aqueous zinc salt solution to a reaction temperature of 80° C. or more without using any autoclave to form hexagonal plate-like zinc oxide particles. 1. A method of producing hexagonal plate-like zinc oxide particles , comprising:mixing by stirring an aqueous hexamethylenetetramine (HMT) solution, a solution of an anionic surfactant in a water-insoluble organic solvent, and optionally water to form a microemulsion containing an aqueous phase of an aqueous hexamethylenetetramine solution having a molar concentration of 0.05 M or more;dropwise adding an aqueous zinc salt solution to the microemulsion; andheating the microemulsion containing the aqueous zinc salt solution to a reaction temperature of 80° C. or more without using any autoclave to form hexagonal plate-like zinc oxide particles.2. The method according to claim 1 , wherein the molar concentration ratio of the aqueous hexamethylenetetramine solution to the aqueous zinc salt solution in the microemulsion is within a range of 0.5 to 1.0.3. The method according to claim 1 , wherein the reaction temperature is raised at a rate of 5° C./min or less.4. The method according to claim 1 , wherein the aqueous zinc salt solution is dropwise added over 2 minutes or more.5. The method according to ...

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03-03-2016 дата публикации

Sinter paste with coated silver oxide on noble and non-noble surfaces that are difficult to sinter

Номер: US20160059361A1
Принадлежит: Heraeus Deutschland GmbH and Co KG

A mixture contains metal oxide particles that are coated with an organic compound. The mixture may be used to connect components and/or to produce a module. A method for producing the mixture is also provided.

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08-03-2018 дата публикации

FUNCTIONAL COPPER SULFIDE COMPOSITION AND A FUNCTIONAL FIBER PRODUCED THEREFROM

Номер: US20180066384A1
Автор: Lee Bong Hee, Lee Kyu Sang
Принадлежит:

The present invention relates to a functional copper sulfide composition and a functional fiber prepared therefrom, and more particularly, a functional copper sulfide composition comprising a copper salt, a metal salt, a reducing agent, a sulfur compound, a catalyst, a polyvalent amine, an alkali compound and a pH adjusting agent; and a functional fiber prepared by treating the composition with a fiber. 1. A functional copper sulfide composition comprising a copper salt , a metal salt , a reducing agent , a sulfur compound , a catalyst , a polyhydric amine , an alkali compound and a pH adjusting agent.2. The composition according to claim 1 ,wherein the composition comprises 10 to 40% by weight of the copper salt, 1 to 10% by weight of the metal salt, 5 to 30% by weight of the reducing agent, 5 to 30% by weight of the sulfur compound, 1 to 5% by weight of the catalyst, 1 to 10% by weight of the polyhydric amine, 1 to 10% by weight of the alkali compound and 1 to 5% by weight of the pH adjusting agent,3. The composition according to claim 1 ,wherein the copper salt is one or more selected from the group consisting of cupric sulfate salt, cupric chloride salt, cupric nitrate salt, cupric acetate salt and cupric sulfate ammonium salt;the metal salt is an inorganic acid salt or an organic acid salt of a metal selected from the group consisting of gold, silver, platinum, nickel, manganese, cobalt, chromium, zinc, palladium, rhodium, ruthenium, osmium, magnesium, iron and iridium;the reducing agent is one or more selected from the group consisting of metal copper, hydroxylamine, ferrous sulfate, ammonium vanadate, furfural, sodium hypophosphate, sodium hypophosphite, sodium hydrogen sulfite, glucose and phenyl compounds;the sulfur compound is one or more selected from sodium sulfide, sulfur dioxide, sulfurous acid, sodium sulfite, sodium hydrogen sulfite, sodium pyrosulfite, hyposulfurous acid, sodium hydrosulfite, sodium thiosulfate, potassium thiosulfate, ammonium ...

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09-03-2017 дата публикации

METHOD FOR PRODUCING WATER DISPERSIBLE CUO NANOSTRUCTURES

Номер: US20170066657A1
Принадлежит:

A method for producing water dispersible CuO nanostructures includes mixing copper nitrate with an ammonia solution. The copper nitrate and ammonia solution can be treated with ultrasound at room temperature. The water dispersible CuO nanostructures can be produced without any surfactant. 1. A method for producing water dispersible CuO nanostructures , comprising:dissolving copper nitrate in deionized water to provide an aqueous copper nitrate solution;placing the aqueous copper nitrate solution in an ultrasonic bath;mixing ammonia with the copper nitrate solution to form a precipitate;placing the precipitate in an ultrasonic bath to form a black precipitate;washing the black precipitate; anddrying the black precipitate to form CuO nanostructures.2. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein the ammonia is mixed with the copper nitrate solution at room temperature.3. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein a pH of the precipitate is adjusted to a level between about 9 and 12.4. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein the black precipitate is washed with water and ethanol.5. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein the black precipitate is dried in an oven at about 80° C. for about 24 hours.6. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein the nanostructures have a thickness of about 26.7 nm to about 54.4 nm.7. The method for producing water dispersible CuO nanostructures according to claim 1 , wherein the nanostructures have a length of about 89.3 nm to about 194.0 nm.8. The method for producing a dispersible CuO nanostructures according to claim 1 , wherein the nanostructures are dispersible in water. 1. Field of the InventionThe present invention relates to CuO nanostructures, and particularly to a method for ...

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16-03-2017 дата публикации

SOLAR ENERGY ABSORBING COATINGS AND METHODS OF FABRICATION

Номер: US20170073530A1
Принадлежит:

Methods, systems, and devices are disclosed for fabricating and implementing optically absorbing coatings. In one aspect, an optically selective coating includes a substrate formed of a solar energy absorbing material, and a nanostructure material formed over the substrate as a coating capable of absorbing solar energy in a selected spectrum and reflecting the solar energy in another selected spectrum. A concentrating solar power (CSP) system includes heat transfer fluids (HTFs); thermal energy storage system (TES); and solar receivers in communication with HTFs and including a light absorbing coating layer based on cobalt oxide nanoparticles. 1. An optically selective coating , comprising:a substrate including a solar energy absorbing material; anda nanostructure material formed over the substrate to absorb solar energy in a selected spectrum and reflect the solar energy in another selected spectrum.2. The coating of claim 1 , wherein the nanostructure material includes metal oxide nanoparticles embedded in a dielectric matrix material.3. The coating of claim 2 , wherein the metal oxide nanoparticles include black oxide nanoparticles and the dielectric matrix material includes ceramic claim 2 , glass claim 2 , or silica.4. The coating of claim 2 , wherein the metal oxide nanoparticles include Mn—Zn ferrites claim 2 , Co ferrites claim 2 , Co oxides claim 2 , or Cu oxides.5. The coating of claim 2 , wherein the metal oxide nanoparticles include black oxides having an average nanoparticle size of 900 nm or less.6. The coating of claim 5 , wherein the average nanoparticle size is less than 500 nm.7. The coating of claim 5 , wherein the average nanoparticle size is less than 300 nm.8. The coating of claim 2 , wherein the metal oxide nanoparticles include Cu—Cr—O oxides.9. The coating of claim 8 , wherein a Cu/Cr ratio is substantially 1/2.10. The coating of claim 9 , wherein the Cu/Cr ratio being substantially 1/2 includes 1±0.3/2±0.3.11. The coating of claim 9 , ...

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31-03-2022 дата публикации

QUANTUM DOT LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF AS WELL AS DISPLAY APPARATUS

Номер: US20220098051A1
Автор: ZHANG Aidi, ZHANG Yichi
Принадлежит:

Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer. 1. A quantum dot light emitting device , comprising:a substrate;a pixel definition layer arranged on the substrate, wherein the pixel definition layer comprises a plurality of pixel openings and pixel partition bodies, the pixel partition bodies define each of the plurality of pixel openings, and a surface of the pixel partition bodies has a hydroxide radical;a quantum dot layer arranged in each of the pixel openings; anda polymer structure sealing the quantum dot layer in each of the pixel openings, wherein each polymer structure is of a fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.2. The quantum dot light emitting device according to claim 1 , wherein the thiol in the thiol siloxane has disulfide reaction to form the polymer structure claim 1 , and the polymer structure is —O—(SiO)—R—S—S—R—(SiO)—O— claim 1 , wherein R is an alkyl radical claim 1 , m is a positive integer.3. ...

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25-03-2021 дата публикации

PHOTOCATALYST, GAS SENSOR DEVICE AND GAS SENSOR

Номер: US20210086169A1
Принадлежит: FUJITSU LIMITED

A photocatalyst made of cuprous bromide, wherein the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by irradiation with light. 1. A photocatalyst made of cuprous bromide ,wherein the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by irradiation with light.2. The photocatalyst according to claim 1 ,wherein the cuprous bromide is an ionic crystal composed of monovalent copper and monovalent bromine, a polycrystalline body including at least a (111)-oriented component.3. A gas sensor device comprising:a first electrode;a second electrode; anda sensitive film that connects the first electrode to the second electrode,wherein the sensitive film is made of cuprous bromide, and the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by irradiation with light.4. A gas sensor comprising:a gas sensor device provided with a first electrode, a second electrode, and a sensitive film that connects the first electrode to the second electrode; anda light source that irradiates the sensitive film with light,wherein the sensitive film is made of cuprous bromide, and the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by light applied from the light source.5. The gas sensor according to claim 4 ,wherein the light source is a light source that applies light including a wavelength component in a near-ultraviolet light region.6. The gas sensor according to claim 4 , comprising:a control unit that measures a concentration of a measuring target gas based on a value detected by the gas sensor device in a case where the measuring target gas is supplied and also controls the light source.7. The gas sensor according to claim 6 ,wherein the control unit controls a gas supply timing and a gas ...

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30-03-2017 дата публикации

Removal of Arsenic from Liquids

Номер: US20170088439A1
Автор: Thakur Narayan V.
Принадлежит:

This disclosure provides methods for separation of arsenic, in the form of arsenate and arsenite, from liquids. The method uses CuO as an adsorbent and brings down the arsenic content of liquids, such as water, to less than 10 ppb. This process is cost-effective and applicable for small, medium, and large scale. 1. A flow-through process for separating arsenite and/or arsenate from a liquid , comprising:i) passing the liquid through a composition comprising CuO; andii) providing a liquid comprising a level of arsenite and/or arsenate of at most 10% of the level of arsenite and/or arsenate in the liquid before step i).2. The process of claim 1 , wherein the liquid is water claim 1 , wine claim 1 , alcohol claim 1 , industrial waste claim 1 , pharmaceutical products claim 1 , or health products claim 1 , or a mixture thereof.3. The process of claim 1 , wherein the liquid is water.4. The process of claim 1 , wherein the composition comprising CuO is impregnated into a solid material.5. The process of claim 4 , wherein the solid material is a porous solid material.6. The process of claim 5 , wherein the porous solid material is packed in a column claim 5 , a sealed device claim 5 , a cartridge or a capsule.7. The process of claim 1 , wherein the composition comprising CuO is packed in a column.8. The process of claim 1 , wherein the liquid after step ii) comprises a level of arsenite and/or arsenate of at most 5% of the level of arsenite and/or arsenate in the liquid before step i).9. The process of claim 1 , wherein the liquid after step ii) comprises a level of arsenite and/or arsenate of at most 1% of the level of arsenite and/or arsenate in the liquid before step i).10. The process of claim 3 , wherein the water after step ii) comprises an arsenic concentration of about 10 parts per billion or less.11. The process of claim 3 , wherein the water after step ii) comprises an arsenic concentration of about 8 parts per billion or less.12. The process of claim 1 , wherein ...

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25-03-2021 дата публикации

COMPOSITIONS OF METAL OXIDE SEMICONDUCTOR NANOMATERIALS AND HEMOSTATIC POLYMERS

Номер: US20210091266A1
Принадлежит:

The present invention provides composition comprising a metal oxide semiconductor nanomaterial coated or dispersed with a hemostatic polymer. 115.-. (canceled)16. A metal oxide semiconductor nanomaterial composition consistinq essentially of a CuO and ZnO nanomaterial and at least one hemostatic polymer wherein the nanomaterial consists of clusters of CuO and ZnO quantum dots consisting of unions of heterojunctions consisting of n-type metal oxide nanoparticles and p-type metal oxide nanoparticles; wherein the hemostatic polymer is adhered or coated on the metal oxide semiconductor nanomaterial; wherein the heterojunctions exhibit an anisotropic conduction of electrons and unequal band gaps; and wherein the nanomaterial exhibits a chemical formula of (CuO)/(ZnO); wherein x is an atomic ratio of the zinc oxide is in the metal oxide semiconductor nanomaterial , and wherein x is about 0.2.17. The metal oxide semiconductor nanomaterial of claim 16 , wherein the metal oxide semiconductor nanomaterial consists of two regions claim 16 , where one region is a surface region and the second region is a core region claim 16 , and the surface region comprises more than 25% by weight of the ZnO and less than 75% by weight of CuO; and the core region comprises less than 10% by weight of the ZnO and more than 90% by weight of the CuO A.18. (canceled)19. The metal oxide semiconductor nanomaterial composition of claim 16 , wherein the hemostatic polymer consists of chitosan claim 16 , alginate claim 16 , gelatin claim 16 , carboxymethyl cellulose claim 16 , polyethylene glycol claim 16 , and combinations thereof.20. The metal oxide semiconductor nanomaterial composition of claim 16 , wherein the hemostatic polymer is from about 1 wt % to about 5 wt % of the metal oxide semiconductor nanomaterial.21. The metal oxide semiconductor nanomaterial composition of claim 16 , wherein the thickness of the hemostatic polymer ranges from about 1.0 nm to about 10.0 nm.22. The metal oxide ...

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09-04-2015 дата публикации

APPLICATION OF LACTAM AS SOLVENT IN NANOMATERIAL PREPARATION

Номер: US20150098883A1

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection. 1. A method of synthesizing nanomaterials comprising the step of:providing lactam as a solvent in a method for synthesizing nanomaterials.2. The method according to claim 1 , wherein the lactam is one or more of substances selected cyclic amide or a cyclic amide derivative.5. The method according to claim 2 , wherein the cyclic amide derivatives are selected from N-methylvalerolactam claim 2 , N-methylcaprolactam claim 2 , N-vinylcaprolactam and N-methoxycaprolactam.6. The method according to claim 1 , wherein the nanomaterials refer to substances containing inorganic particles with 1 nm Подробнее

09-04-2015 дата публикации

ZINC OXIDE POWDER AND PROCESS FOR MANUFACTURING SAME

Номер: US20150099122A1
Принадлежит:

The present invention provides a zinc oxide powder that enables a high degree of orientation, and highly uniform dispersion of an additive substance, to be simultaneously achieved in a green body or a sintered body. The zinc oxide powder of the present invention comprises a plurality of plate-like zinc oxide particles and has a volume-based D50 average particle diameter of 1 to 5 μm and a specific surface area of 1 to 5 m/g. The zinc oxide powder has a degree of orientation of the (002) plane of 40% or greater when two-dimensionally arrayed into a monolayer on a substrate. 1. A zinc oxide powder comprising a plurality of plate-like zinc oxide particles , the zinc oxide powder having a volume-based D50 average particle diameter of 1 to 5 μm , a specific surface area of 1 to 5 m/g , and a degree of orientation of a (002) plane of 60% or greater when the zinc oxide powder is two-dimensionally arrayed into a monolayer on a substrate.2. The zinc oxide powder according to claim 1 , wherein a volume of pores having a pore diameter of 10 nm or greater and 1 μm or less per unit weight is 0.08 mL/g or greater.3. The zinc oxide powder according to claim 1 , wherein when ball mill treatment is performed on the zinc oxide powder claim 1 , a ratio of a volume-based D50 average particle diameter of the zinc oxide powder before the ball mill treatment Dto a volume-based D50 average particle diameter of the zinc oxide powder after the ball mill treatment D claim 1 , i.e. claim 1 , D/D claim 1 , is less than 4.0.4. The zinc oxide powder according to claim 1 , wherein the plate-like zinc oxide particles further comprise an additive substance.5. A method for producing a plate-like zinc oxide powder claim 1 , comprising the steps of:subjecting a raw material solution containing zinc ion and sulfate ion to a solution method to produce plate-like zinc oxide precursor particles, andcalcining the plate-like precursor particles by increasing a temperature to a calcination temperature ...

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13-04-2017 дата публикации

COPPER CHLORIDE, CVD RAW MATERIAL, COPPER WIRING FILM, AND METHOD FOR PRODUCING COPPER CHLORIDE

Номер: US20170101718A1
Автор: Kanou Gaku, OMORI TATSUYA
Принадлежит:

Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less. 115.-. (canceled)16. A method for producing copper chloride , which comprises providing a partition wall between a cathode and an anode , performing an electrochemical reaction in a hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as an raw material anode , and taking out a chloride precipitated on a surface of the anode , followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and the Ag content of 0.5 wt ppm or less.17. A method for producing copper chloride , which comprises providing a partition wall between a cathode and an anode , performing an electrochemical reaction in a hydrochloric acid-based electrolytic solution using pure copper having a purity of 6N or more as a raw material anode , and taking out a chloride precipitated on a surface of the anode , followed by washing with water and further drying to produce copper chloride having a purity of 6N or more and a total content of one or more impurities selected from the group consisting of Na , Mg , Ti , Cr , Mn , Fe , Co , Ni , Zn , As , Ag , Cd , In , Sn , Tl , and Pb of 1.0 wt ppm or less.18. The method for producing copper chloride according to or , which includes adjusting the pH of an electrolytic solution in a range of 1 to 3 in the electrochemical reaction to produce copper(I) chloride.19. The method for producing copper chloride according to or , which includes adjusting the pH of an electrolytic solution in a range of 9 to 10 in the electrochemical reaction to produce copper(II) chloride.20. The method for producing copper chloride according to claim 18 , which includes dissolving ...

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12-04-2018 дата публикации

Copper Vanadium Oxides as a Reversible Cathode for Lithium Ion Batteries

Номер: US20180102538A1

A lithium ion battery having a cathode including an α-copper vanadium oxide having a stoichiometry of Cu 7−x V 6 O 19−X , wherein 0≤x≤0.5, and a discharge capacity of at least 250 mAh/g after 20 cycles is claimed. Solid state and hydrothermal reaction methods of synthesizing the α-copper vanadium oxide are also claimed.

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19-04-2018 дата публикации

COPPER OXIDE POWDER FOR USE IN PLATING OF A SUBSTRATE, METHOD OF PLATING A SUBSTRATE USING THE COPPER OXIDE POWDER, AND METHOD OF MANAGING PLATING SOLUTION USING THE COPPER OXIDE POWDER

Номер: US20180105946A1
Принадлежит:

Soluble copper oxide powder capable of preventing a decrease in quality of a copper film formed by plating is disclosed. The copper oxide powder contains copper and impurities including sodium. A concentration of the sodium is not more than 20 ppm. The copper oxide powder is regularly supplied into a plating solution. A voltage is applied between an insoluble anode and a substrate immersed in the plating solution, thereby plating the substrate. 1. A copper oxide powder to be supplied into a plating solution for plating a substrate , comprising:copper; andimpurities including sodium, a concentration of the sodium being not more than 20 ppm.2. The copper oxide powder according to claim 1 , wherein a total of concentrations of the impurities is not more than 50 ppm.3. The copper oxide powder according to claim 2 , wherein the impurities include iron at a concentration of less than 10 ppm claim 2 , the sodium at a concentration of less than 20 ppm claim 2 , calcium at a concentration of less than 5 ppm claim 2 , zinc at a concentration of less than 20 ppm claim 2 , nickel at a concentration of less than 5 ppm claim 2 , chromium at a concentration of less than 5 ppm claim 2 , arsenic at a concentration of less than 5 ppm claim 2 , lead at a concentration of less than 5 ppm claim 2 , chlorine at a concentration of less than 10 ppm claim 2 , and silver at a concentration of less than 5 ppm.4. The copper oxide powder according to claim 1 , wherein a particle size of the copper oxide powder is in a range of 10 micrometers to 200 micrometers.5. A method of plating a substrate claim 1 , comprising:supplying copper oxide powder into a plating solution, the copper oxide powder containing copper and impurities including sodium, a concentration of the sodium being not more than 20 ppm; andapplying a voltage between an insoluble anode and a substrate immersed in the plating solution to plate the substrate.6. The method according to claim 5 , wherein a total of concentrations of the ...

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02-04-2020 дата публикации

NANOPOROUS COPPER SUPPORTED COPPER OXIDE NANOSHEET ARRAY COMPOSITES AND METHOD THEREOF

Номер: US20200102227A1
Принадлежит:

A nanoporous copper supported copper oxide nanosheet array composite is provided. The nanoporous copper supported copper oxide nanosheet array composite comprises a nanoporous copper substrate and a copper oxide nanosheet array. The copper oxide nanosheet array is disposed on one surface of the nanoporous copper substrate, and the nanoporous copper substrate is chemically bonded to the copper oxide nanosheet array. 1. A nanoporous copper supported copper oxide nanosheet array composite , comprising:a nanoporous copper substrate and;a copper oxide nanosheet array, wherein the copper oxide nanosheet array is disposed on a surface of the nanoporous copper substrate, and the nanoporous copper substrate is chemically bonded with the copper oxide nanosheet array.2. The nanoporous copper supported copper oxide nanosheet array composite as claimed in claim 1 , wherein the nanoporous copper supported copper oxide nanosheet array composite consists of the nanoporous copper substrate and the copper oxide nanosheet array.3. The nanoporous copper supported copper oxide nanosheet array composite as claimed in claim 1 , wherein the copper oxide nanosheet array comprises a plurality of copper oxide nanosheets claim 1 , and the plurality of copper oxide nanosheets are perpendicular to the nanoporous copper substrate.4. The nanoporous copper supported copper oxide nanosheet array composite as claimed in claim 3 , wherein a length of the plurality of copper oxide nanosheets ranges from 200 nm to 1.5 μm.5. The nanoporous copper supported copper oxide nanosheet array composite as claimed in claim 3 , wherein a thickness of the plurality of copper oxide nanosheets ranges from 20 nm to 80 nm.6. The nanoporous copper supported copper oxide nanosheet array composite as claimed in claim 1 , wherein the nanoporous copper substrate comprises a plurality of pores claim 1 , and a diameter of each of the plurality of pores ranges from 20 nm to 200 nm.7. The nanoporous copper supported copper ...

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10-07-2014 дата публикации

3-DIMENSIONAL NANOPARTICLE ASSEMBLY STRUCTURE AND GAS SENSOR USING SAME

Номер: US20140193325A1
Принадлежит:

The present invention provides a 3-dimensional nanoparticle structure, wherein a plurality of structures formed by assembling nanoparticles is connected to form a bridge, and a gas sensor using the same. 1. A gas sensor using a 3-dimensional nanoparticle structure , wherein a plurality of structures formed by assembling metal or metal oxide nanoparticles is connected to form a bridge.2. The 3-dimensional nanoparticle structure according to claim 1 , wherein the plurality of structures formed by assembling metal or metal oxide nanoparticles has a petal shape claim 1 , and the neighboring petals are connected to form a bridge.3. A method for manufacturing a gas sensor using the nanoparticle structure of claim 1 , which comprises the steps of:1) positioning a substrate, which has a micro or nanopattern formed by a mask layer having a perforated pattern, in a reactor, and then applying an electric field;2) generating charged nanoparticles and ions by spark discharging metal or metal oxide nanoparticle precursors in a spark discharge chamber; and3) introducing the charged nanoparticles and ions into the reactor, and then focused-depositing the nanoparticles at the perforated part of the micro or nano pattern of the substrate to form the nanoparticle structure.4. The method according to claim 3 , which further comprises a step of generating ions by corona discharge claim 3 , and then accumulating the ions on the micro or nano pattern of the substrate claim 3 , which is located in the reactor claim 3 , before conducting the step 2).5. The method according to claim 3 , which further comprises a step of heating the nanoparticle structure under oxygen-containing atmosphere. This application is a continuation-in-part of copending PCT application PCT/KR2013/001703 filed on Mar. 4, 2013 to Nam et al., which claims priority to Republic of Korea patent application 10-2012-0076893 filed on Jul. 13, 2012 to Nam et al., both of which are incorporated herein by reference.The present ...

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17-07-2014 дата публикации

CUPROUS OXIDE POWDER AND METHOD FOR PRODUCING SAME

Номер: US20140199204A1
Принадлежит: DOWA ELECTRONICS MATERIALS CO., LTD.

There are provided a cuprous oxide powder having a smaller particle diameter than that of conventional cuprous oxide powders, and a method for producing the cuprous oxide powder by a chemical reducing process. In a method for producing a cuprous oxide powder by adding a reducing agent, such as a reducing sugar, to a solution containing copper hydroxide, which is formed by adding one of an alkali solution and a copper ion containing solution to the other thereof, to deposit cuprous oxide particles by reduction, 0.00001 to 0.04 moles (10 to 40000 ppm) of ferrous ions with respect to the amount of copper ions in the copper ion containing solution are added to the copper ion containing solution before forming copper hydroxide, to produce a cuprous oxide powder which has a mean primary particle diameter of not greater than 0.5 micrometers when it is measured by a scanning electron microscope (SEM), the cuprous oxide powder having a 50% particle diameter (Ddiameter) of not greater than 0.8 micrometers when it is calculated by a laser diffraction type particle size distribution measurement, the cuprous oxide powder containing 0.30 ppm or more of iron. 1. A method for producing a cuprous oxide powder , the method comprising the steps of:adding ferrous ions to a copper ion containing solution;adding one of an alkali solution and the copper ion containing solution, to which the ferrous ions are added, to the other thereof to form copper hydroxide; andadding a reducing agent to the solution, in which copper hydroxide is formed, to deposit cuprous oxide particles by reduction.2. A method for producing a cuprous oxide powder as set forth in claim 1 , wherein the amount of the added ferrous ions is 0.00001 moles or more with respect to 1 mole of copper ions in the copper ion containing solution.3. A method for producing a cuprous oxide powder as set forth in claim 1 , wherein the amount of the added ferrous ions is 0.04 moles or less with respect to 1 mole of copper ions in the ...

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03-05-2018 дата публикации

SUPERCONDUCTING WIRE

Номер: US20180122534A1
Принадлежит: Sumitomo Electric Industries, Ltd.

A superconducting wire includes: a laminated structure including a substrate having a main surface and a superconducting material layer formed on the main surface; and a reinforcing layer disposed on both side surfaces of the laminated structure in the width direction of the substrate. The reinforcing layer has an exposed end surface positioned on at least one side of the bottom surface and the top surface of the laminated structure. In a cross section in the width direction of the substrate, the ratio of the total width of the reinforcing layer to the width of the laminated structure is 1% or more and 15% or less. 1: A superconducting wire comprising:a laminated structure including a substrate having a main surface and a superconducting material layer formed on the main surface; anda reinforcing layer disposed on both side surfaces of the laminated structure in a width direction of the substrate,the laminated structure having a bottom surface on which the substrate is positioned, and a top surface on an opposite side to the bottom surface,the reinforcing layer having a surface on at least one side of the bottom surface and the top surface of the laminated structure, the surface being exposed, andin a cross section in the width direction of the substrate, a ratio of a total width of the reinforcing layer to a width of the laminated structure being 1% or more and 15% or less.2: The superconducting wire according to claim 1 , further comprising a coating layer disposed on at least one side of the top surface and the bottom surface of the laminated structure claim 1 , whereinin a cross section in the width direction of the substrate, a width of the coating layer is wider than a width of the laminated structure, andthe reinforcing layer is a conductive bonding member bonding the laminated structure and the coating layer together.3: The superconducting wire according to claim 1 , whereinthe reinforcing layer includes:a metal member bonded to both side surfaces of the ...

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31-07-2014 дата публикации

HYDROMETALLURGICAL METHOD FOR RECOVERY OF ZINC IN SULPHURIC MEDIUM STARTING FROM SULPHIDIC ZINC CONCENTRATES WITH HIGH IRON CONTENT

Номер: US20140212348A1
Принадлежит: Ram5, S.L.

This method is based in the recirculation of an iron free solution or a solution with low iron content in such a manner that the final acidity conditions obtained are ideal for iron to efficiently precipitate as jarosite. 16.-. (canceled)7. A hydrometallurgical method for recovering zinc in sulphuric media from sulphidic zinc concentrates with high iron content characterized in that a zinc concentrate is subjected to the following steps , all of which except step (a) , take place at atmospheric pressure:a. roasting of at least part of the zinc concentrate;b. neutral leaching where zinc oxide is dissolved;{'sup': '+++', 'c. acid leaching where zinc ferrites are leached by means of sulphuric acid in the form of spent electrolyte and concentrated sulphuric acid, generating a resulting solution rich in zinc and iron that contains between 10 and 35 g/l of Fe and between 10 and 70 g/l of sulphuric acidity, and a residue wherein are concentrated the lead, silver and gold contained in the concentrates;'}{'sup': +++', '++', '++, 'd. reducing the Fe contained in the solution resulting from step (c) to Fe by adding zinc concentrate obtained during step (f) at the required rate to obtain a final Fe concentration that allows working during step (f) with a final acidity between pH 1.5 and 10 g/l without using any neutralizing agent other than the products necessary for the reactions characteristic of the step (f) to take place;'}{'sup': '++', 'e. neutralizing the acidity of the solution resulting from step (d) with calcine, generating a final solution with a pH between 3.8 and 5.2 and a final Fe concentration such that allows working during step (f) at a final acidity between pH 1.5 and 10 g/l without using any neutralizing agent other than the products necessary for the reactions characteristic of the step (f) to take place;'}{'sup': +', '+, 'sub': '4', 'f. oxidizing iron and precipitating jarosite from the solution resulting from step (e), free of contaminating solids, by ...

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26-05-2016 дата публикации

Nanocrystaline spherical ceramic oxides, process for the synthesis and use thereof

Номер: US20160145117A1
Принадлежит: Cuf-Companhia Uniao Fabril Sgps SA

The present invention refers to nanocrystaline spherical ceramic oxides, to the process for the synthesis and use thereof. These oxides, obtained by detonation of a water-in-oil emulsion (W/O), besides having a spherical morphology and nanocrystallinity, show a set of complementary features, namely a particle dimension inferior to 40 μm, bimodal particle size distribution, high purity, deagglomeration and stable crystalline stages. This set of features makes these powders particularly suitable for several applications such as coating processes, near net shape processes and, when applied in ceramics industry, they provide dense and porous ceramic objects of exceptionally high mechanical resistance.

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30-04-2020 дата публикации

BLACK MIXED OXIDE MATERIAL AND METHOD FOR MANUFACTURING SAME

Номер: US20200131373A1
Принадлежит:

Provided are a black mixed oxide that contains chromium per se of any valency as a main component, and fails to contain cobalt as the main component material, and has a high safety, an excellent color tone and economical efficiency, and a method for producing the same, and various products using the black mixed oxide material. The mixed oxides comprise oxides containing La, Mn and Cu as main components but containing neither Cr nor Co as a main component, wherein the contents of La, Mn and Cu in the mixed oxides satisfy the following ratios, as oxide equivalent amount with respect to 100% by weight of the oxide equivalent amount: the La content as LaObeing 35-70 wt %; the Mn content as MnObeing 25-60 wt %; and the Cu content as CuO being 0.5-10 wt %. 1. A black pigment containing an oxide containing La , Mn and Cu as main components , and not containing Cr and Co as the main components , wherein{'sub': 3', '4', '2', '3', '2, 'Mn is made from MnO, the contents of La, Mn, and Cu in the black pigment satisfy the following ratio: 35 to 70% by weight as LaO; and 25 to 60% by weight as MnO; and 0.5 to 10% by weight as CuO, respectively, as oxide equivalent amounts in which the total weight is 100% by weight,'}the black pigment has an average particle size of 20 urn or less,the black pigment in a L*a*b* color system pursuant to JIS-Z-8729 presents a black color with the degree of black (L value) of 25.0 or less,the black pigment has a perovskite phase exhibiting a maximum intensity diffraction peak in a range of 31° to 34° of a diffraction angle 2θ in X-ray diffraction measurement using CuKα ray as an X-ray source, and{'sub': 3', '4, 'the black pigment contains MnOthat has a spinel structure, as an oxide of Mn.'}23.-. (canceled)4. The black pigment according to claim 1 , whereinthe black pigment further contains an oxide of Mo as the main component, and{'sub': 2', '3', '2', '3, 'in an oxide equivalent amount in which the total weight of three kinds of oxides that are LaOas ...

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14-08-2014 дата публикации

METHOD FOR MANUFACTURING ZINC OXIDE THIN FILM, AND DEVICE

Номер: US20140227169A1
Принадлежит: NIKON CORPORATION

A method of manufacturing a zinc oxide thin film includes: preparing a basic solution containing tetrahydroxozincate (II) ions and having a pH of 10 or more; diluting the basic solution such that the pH becomes 8.5 or less; applying the basic solution to a substrate; and heating the basic solution. 1. A method of manufacturing a zinc oxide thin film , the method comprising:preparing a basic solution containing tetrahydroxozincate (II) ions and having a pH of 10 or more;diluting the basic solution such that the pH becomes 8.5 or less;applying the basic solution to a substrate; andheating the basic solution.2. The method of manufacturing a zinc oxide thin film according to claim 1 , wherein the basic solution is applied to a surface of the substrate while the basic solution is diluted on the substrate.3. The method of manufacturing a zinc oxide thin film according to claim 1 , wherein a zinc oxide thin film formed on the substrate is rinsed.4. The method of manufacturing a zinc oxide thin film according to claim 1 , wherein the basic solution is diluted with pure water.5. The method of manufacturing a zinc oxide thin film according to claim 1 , wherein the basic solution is applied to the preliminarily heated substrate claim 1 , and the basic solution is heated on the substrate.6. The method of manufacturing a zinc oxide thin film according to claim 1 , wherein the basic solution which is preliminarily heated is applied onto the substrate.7. A device comprising a zinc oxide thin film manufactured by using the method according to . This is a Continuation Application of International Application No. PCT/JP2012/71732, filed on Aug. 28, 2012, which claims priority on Japanese Patent Application No. 2011-188304, filed on Aug. 31, 2011. The contents of the aforementioned applications are incorporated herein by reference.1. Field of the InventionThe present invention relates to a method of manufacturing a zinc oxide thin film, and a device.2. BackgroundA zinc oxide thin film ...

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15-09-2022 дата публикации

A NOVEL POLYMORPH AND USES THEREOF

Номер: US20220289587A1
Принадлежит: PROCYPRA THERAPEUTICS, LLC

In one embodiment, the present application discloses compounds that are selective neuroactive agents for the treatment of diseases of the central nervous system (CNS). In one aspect, the neuroactive agents are compositions comprising Polymorph SP. 1. A stable polymorph of Cu-diacetyl-bis (N-methyl-thiosemicarbazone) (CuATSM) and gluconic acid , wherein the composition has at least five XRPD spectrum peaks selected from the group consisting of Two-Theta angles of approximately 7.5 , 9 , 11 , 15.5 , 27.5 , 28.5 , and 32 degrees.2. The polymorph of wherein the polymorph has at least six XRPD spectrum peaks selected from the group consisting of Two-Theta angles of approximately 7.5 claim 1 , 9 claim 1 , 11 claim 1 , 15.5 claim 1 , 27.5 claim 1 , 28.5 claim 1 , and 32 degrees.3. The polymorph of claim 2 , wherein the polymorph has XRPD spectrum peaks at Two-Theta angles of approximately 7.5 claim 2 , 9 claim 2 , 11 claim 2 , 15.5 claim 2 , 27.5 claim 2 , 28.5 claim 2 , and 32 degrees.4. A pharmaceutical composition comprising a therapeutically effective amount of a polymorph of claim 1 , and a pharmaceutically acceptable excipient or salt.5. A method for the treatment or prophylaxis of a condition in a mammal in which copper delivery prevents claim 4 , alleviates or ameliorates the condition comprising administering to the mammal a therapeutically effective amount of the composition of .6. The method of claim 5 , wherein the condition is selected from the group consisting of adriamycin-induced cardiomyopathy; AIDS dementia and HV-1 induced neurotoxicity; Alzheimer's disease; acute intermittent porphyria; Alzheimer's disease (AD); amyotrophic lateral sclerosis (ALS); atherosclerosis; cataract; cerebral ischemia; cerebral palsy; cerebral tumor; chemotherapy-induced organ damage; cisplatin-induced nephrotoxicity; coronary artery bypass surgery; Creutzfeldt-Jacob disease and its new variant associated with “mad cow” disease; diabetic neuropathy; Down syndrome; drowning; ...

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31-05-2018 дата публикации

METHOD FOR PRODUCING ZEOLITE

Номер: US20180148341A1
Принадлежит: IBIDEN CO., LTD.

There is provided a method for producing zeolite having a CHA structure in which Cu is carried, the method enabling an increase in ion exchange efficiency of Cu, effective utilization of Cu, and reduction in production cost. The method for producing the zeolite having the CHA structure in which Cu is carried includes a mixing step of mixing a powder of the zeolite having the CHA structure and a powder of Cu salt with each other and a heating step of heating the obtained powder mixture. 1. A method for producing zeolite having a CHA structure in which Cu is carried , the method comprising:mixing a powder of the zeolite having the CHA structure and a powder of Cu salt with each other to produce powder mixture; andheating the powder mixture.2. The method for producing zeolite according to claim 1 ,wherein a moisture content of the powder mixture is 30% by mass or less.3. The method for producing zeolite according to claim 1 ,wherein a heating temperature during the heating of the powder mixture is 250 to 800° C.4. The method for producing zeolite according to claim 1 ,wherein the Cu salt is at least one salt selected from the group including copper sulfate, copper nitrate, copper acetate, and copper chloride.5. The method for producing zeolite according to claim 1 ,wherein the Cu salt is the copper nitrate, andwherein an atmosphere during the heating of the powder mixture is an oxidizing atmosphere.6. The method for producing zeolite according to claim 1 ,wherein a Cu/Al (molar ratio) is 0.2 to 0.5 in the zeolite having the CHA structure in which the Cu is carried.7. The method for producing zeolite according to claim 1 ,{'sub': 2', '2', '3, 'wherein a SiO/AlOcomposition ratio (SAR) is less than 15 in the zeolite having the CHA structure in which the Cu is carried.'}8. The method for producing zeolite according to claim 1 ,wherein an average particle size is 0.5 μm or less in the zeolite having the CHA structure in which the Cu is carried. The present invention relates ...

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23-05-2019 дата публикации

Preparation of Stable Copper(II) Hydroxide

Номер: US20190152796A1
Принадлежит: Nanotheranostics Inc.

A method for producing stable copper(II) hydroxide. The method comprises the treatment of a copper metal powder in an acidic aqueous solution containing acetic acid in the pH range less than 3.0 and at temperature below 30 ° C. under stirring conditions. To this acidic solution an alkali metal hydroxide solution is added to raise the pH above 7.0 to form copper(II) hydroxide. The method also comprises preparation of copper(II) hydroxide by treating the copper salts water solution with an alkali metal hydroxide solution in the pH range 7.0 to 12. To improve the stability of the copper(II) hydroxide prepared according to all the said method, a small amount of alkali or alkaline metal gluconate can be added to the suspension before or after the reaction. Also disclosed is a composition comprising stabilized copper(II) hydroxide prepared according to the method and at least one of a plant derived extract demonstrated to have antifungal, antibacterial or antiviral activity as a solid or a liquid or as a surfactant or as a coating. 1. A method for preparing color-stable Copper(II) hydroxide comprising the steps of:a) maintaining a temperature below 30° C. throughout the steps to follow;b) providing an aqueous acidic solution having a carboxyl (—COOH) functional group acid at a pH less than 3.0, while maintaining a temperature below 30° C.;c) adding copper metal to the aqueous solution;d) adding to the acidic aqueous solution an alkali or alkaline gluconate under continuous stirring; ande) adding an alkali hydroxide to the solution to raise the pH to between 7.0 and 12 to form insoluble blue copper(II) hydroxide which remains stable at high temperature.2. The method as claimed in wherein the copper metal is in the form of copper powder.3. The method as claimed in . wherein the copper powder is of a size of −200 mesh or less.45. The method as claimed in wherein the carboxyl (—COOH) functional group acid is selected from the group of: formic acid claim 2 , acetic acid and ...

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21-05-2020 дата публикации

Antimicrobial and agrochemical compositions

Номер: US20200154713A9
Автор: Sarah Gurr, Tony John Hall
Принадлежит: Myco Sciences Ltd

In accordance with, the present invention, there is provided an antimicrobial composition comprising an aqueous solution containing copper and/or zinc ions, optionally a hydroxide salt, and phosphorous acid. The composition, is additionally sporicidal and scleroticidal when combined with a salt of nitrous acid such as sodium nitrite. The present invention may also include chemicals containing the phosphite or phosphonaie group (PO/l which can inhibit the formation of scierotia at concentrations that are readily achievable for agricultural applications. Compositions of the present invention, inhibit, scierotia formation by fungi and may therefore be used in the field to prevent the continuation and advancement of pathogenie fungi.

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21-05-2020 дата публикации

HIGH TEMPERATURE SUPERCONDUCTING MATERIAL AND A METHOD FOR PRODUCTION

Номер: US20200156955A1
Принадлежит: TRUE 2 MATERIALS PTE LTD.

A process for producing a process for producing a LnMCuOhigh-temperature superconductive powder, the process comprising: 1. A process for producing a LnMCuOhigh-temperature superconductive powder , the process comprising:i) providing an aqueous solution of Ln, M and Cu and at least one mineral acid;ii) adding at least one sequestrating agent and, optionally, at least one dispersant to the solution to form a precipitate;iii) recovering the precipitate from the solution; and{'sub': 2', '3', 'x, 'iv) heating the precipitate in a flow of oxygen to form the LnMCuOpowder,'}wherein Ln is a rare earth element, preferably Y, Ce, Dy, Er, Gd, La, Nd, Pr, Sm, Sc, Yb, or a mixture of two or more thereof, andwherein M is selected from Ca, Sr, and Ba.2. A process for producing a LnMXCuOand/or LnMXCuOhigh-temperature superconductive powder , the process comprising:i) providing an aqueous solution of Ln, M, X and Cu and at least one mineral acid;ii) adding at least one sequestrating agent and, optionally, at least one dispersant to the solution to form a precipitate;iii) recovering the precipitate from the solution; and{'sub': 2-y', 'y', '3', 'x', '2', '2-y', 'y', 'x, 'iv) heating the precipitate in a flow of oxygen to form the LnMXCuOand/or LnMXCuOpowder,'}wherein X is selected from the group consisting of Mg, Se, Sr, Ca and mixtures of two or more thereof,wherein Ln is a rare earth element, preferably Y, Ce, Dy, Er, Gd, La, Nd, Pr, Sm, Sc, Yb, or a mixture of two or more thereof, andwherein M is selected from Ca, Sr, and Ba.3. The process according to claim 2 , wherein X is Mg.4. The process according to claim 2 , wherein the powder has a morphology selected from the group consisting of cigars claim 2 , spiral claim 2 , spires claim 2 , rods claim 2 , tubes claim 2 , cylinders claim 2 , agglomerates and flat “cracker” shaped crystalline agglomerates.5. The process according to claim 4 , wherein the process further comprises:v) sintering the powder at a temperature of from 930° C. ...

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21-05-2020 дата публикации

METHOD FOR PRODUCING METAL OXIDE NANOPARTICLES

Номер: US20200156956A1
Принадлежит:

The present disclosure relates to a method for producing metal oxide nanoparticles includes a first step of preparing a reaction solution containing a metal complex, an alcohol, and water; a second step of heating the reaction solution for phase-separation under a hermetically sealed atmosphere where the volumetric expansion ratio of the reaction solution reaches 5 to 15%; a third step of holding the reaction solution heated in the second step for 30 minutes or more for dehydrating the metal complex to precipitate the metal oxide nanoparticles; and a fourth step of collecting the metal oxide nanoparticles after the metal oxide nanoparticles are cooled. 1. A method for producing metal oxide nanoparticles comprising:a first step of preparing a reaction solution containing a metal complex, an alcohol, and water,a second step of heating the reaction solution for phase-separation under a hermetically sealed atmosphere where a volumetric expansion ratio of the reaction solution reaches 5 to 15%,a third step of holding the reaction solution heated in the second step for 30 minutes or more for dehydrating the metal complex to precipitate the metal oxide nanoparticles, anda fourth step of collecting the metal oxide nanoparticles after the metal oxide nanoparticles are cooled.2. The method for producing metal oxide nanoparticles according to claim 1 , wherein a pH of the reaction solution is 4.0 to 6.0 in the first step.3. The method for producing metal oxide nanoparticles according to claim 1 , wherein a holding temperature under the hermetically sealed atmosphere is 130 to 190° C. and a holding time is 12 hours or more in the third step.4. The method for producing metal oxide nanoparticles according to claim 1 , wherein the first step comprises:a step of preparing a solution containing the metal complex,a step of preparing a mixed solution in which the alcohol and water are uniformly mixed, anda step of mixing the solution containing the metal complex with the mixed ...

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21-06-2018 дата публикации

AQUEOUS-BASED METHOD OF PREPARING METAL CHALCOGENIDE NANOMATERIALS

Номер: US20180170754A1
Автор: Dou Shixue, Han Chao, Li Zhen
Принадлежит:

Provided is a method for producing metal chalcogenide nanomaterials, comprising the steps of forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt; mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and separating the produced metal chalcogenide nanomaterials from the aqueous solution. Also provided is a method of converting metal chalcogenide nanoparticles into metal chalcogenide nanotubes or nanosheets, comprising the steps of forming an aqueous mixture of a chalcogen precursor, a reducing agent and the metal chalcogenide nanoparticles in water; and forming the nanotubes or nanosheets by stirring or not stirring the aqueous mixture, respectively. 1. A method for producing metal chalcogenide nanomaterials , comprising the steps of:forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt;mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and,separating a produced metal chalcogenide nanomaterial from the aqueous solution.2. The method of claim 1 , wherein the metal chalcogenide nanomaterial is produced without use of a surfactant.3. The method of claim 1 , wherein the reaction temperature is between about 10° C. to about 30° C. claim 1 , inclusively.4. The method of claim 1 , wherein the reaction temperature is between about 20° C. to about 30° C. claim 1 , inclusively.5. The method of claim 1 , wherein the reaction temperature is about room temperature.6. The method of claim 5 , wherein external heating is not used.7. The method of claim 1 , wherein the produced metal chalcogenide nanomaterial has a formula of ME claim 1 , where:M is Bi, Cu, Pb, Ag, In, Sn, or Sb;E is O, S, Se or Te when M is Cu, or E is S, Se or Te when M is Bi, Pb, Ag, In, Sn, or Sb; and1≤x≤2 and 1≤y≤3.8. The method of claim 1 , wherein the produced metal chalcogenide ...

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18-09-2014 дата публикации

HIGH ENERGY MATERIALS FOR A BATTERY AND METHODS FOR MAKING AND USE

Номер: US20140264190A1
Принадлежит: Wildcat Discovery Technologies, Inc.

A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included. 1. An electrode formed from an active material , comprising:a copper fluoride compound; anda dopant included in the copper fluoride compound via a doping process, wherein the dopant comprises selenium.2. The electrode of wherein the doping process includes a mixing step.3. The electrode of wherein the doping process includes an annealing step.4. The electrode of wherein the doping process uses a dopant amount of 0.1 equivalents or less.5. The electrode of wherein the doping process uses a dopant amount of 0.01 equivalents or less.6. The electrode of wherein the doping process uses a dopant amount of greater than 0.1 equivalents.7. A method of making a composition for use in forming an electrode for a battery comprising doping a dopant into a metal fluoride compound claim 1 , wherein the doping process induces the formation of a conductive metallic network in the active material.8. The method of wherein doping comprising mixing the dopant and the metal fluoride compound and annealing the mixture.9. The method of wherein the metal in the metal fluoride is copper or iron.10. The method of wherein the dopant is selected from the group consisting of transition metals claim 7 , chalcogens claim 7 , halogens claim 7 , alkali metals claim 7 , alkaline metals claim 7 , and rare-earth elements.11. The method of wherein the dopant is selected from the group consisting of transition metals and chalcogens.12. The method of wherein the dopant is a transition metal.13. The method of wherein the dopant is a chalcogen.14. The method of ...

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06-06-2019 дата публикации

P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM

Номер: US20190172914A1
Принадлежит: RICOH COMPANY, LTD.

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCuO where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and x and y satisfy the following expressions: 0≤x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba. 111-. (canceled)12. A p-type oxide , wherein the p-type oxide is represented by the following compositional formula:{'br': None, 'i': x', 'y, 'sub': '2', 'AO.CuO'}{'sub': '2', 'where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein'} [{'br': None, 'i': 'x Подробнее

08-07-2021 дата публикации

ACID BALANCE IN A CHLORIDE HEAP LEACH

Номер: US20210207245A1
Принадлежит: BHP CHILE INC

A method of controlling the acid balance in a high chloride heap leach process tomaximise the copper dissolution in a cure step and to increase overall copper recovery which include an agglomeration stage in which acid and process solutions are combined with the ore prior to stacking to form a heap followed by a cure phase to leach a portion of the copper in the ore in the heap followed by an irrigated leach phase in which the remaining copper minerals are leached and copper is recovered from a pregnant leach solution by a solvent extraction step followed by an electrowinning step wherein the acid concentration in the pregnant leach solution which reports to the solvent extraction step is less than 10 g/L to allow effective copper recovery from the pregnant leach solution in the solvent extraction step. 1. (canceled)2. (canceled)3. The method according to claim 4 , where overall copper dissolution in the aerated claim 4 , but non-irrigated claim 4 , cure phase and in the irrigated leach phase is greater than 40%.4. A method of controlling acid balance in a high chloride heap leach process carried out at ambient temperature claim 4 , wherein a chloride concentration is between 100 g/L and 180 g/L to ensure that copper dissolution in an agglomeration stage is not limited by acid to maximize the copper dissolution in a cure phase and thereby increase an overall copper recovery claim 4 , wherein the method comprises:an agglomeration stage in which acid and process solutions are combined with an ore prior to stacking to form a heap;an aerated, but non-irrigated, cure phase to leach a portion of copper in the ore in the heap, wherein the copper dissolution in the aerated, but non-irrigated, cure phase is at least 30%; andan irrigated leach phase during which remaining copper minerals are leached and copper is recovered from a pregnant leach solution by a solvent extraction process followed by an electrowinning process, andwherein the heap comprises a plurality of heap ...

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28-06-2018 дата публикации

PROCESS OF CLEAN PRODUCTION OF ELECTRONIC GRADE HIGH-PURITY COPPER OXIDE

Номер: US20180179077A1
Принадлежит:

The present disclosure provides a process of clean production of electronic grade high-purity copper oxide. The process includes (1) preparing a carbon-ammonia system solution with a certain ratio of CO, NHand HO; (2) dissolving copper under a slightly negative pressure and at a system temperature less than or equal to 60° C.; the reaction ends until the concentration of copper in the carbon-ammonia system solution reaches 80 to 140 g/L; (3) adding sodium polyacrylate; the reaction solution is heated to 60-80° C. under a reduced pressure for deamination; (4) disposing basic copper carbonate to separate the solid from the liquid by a centrifuge to give an filter cake and copper-containing clear solution; (5) calcining the filter cake at 250-600° C. for 1-5 hours to give an electronic grade high purity copper oxide; ammonia collected in step (3), the copper-containing clear solution collected in step (4), and carbon dioxide and water vapor collected in step (5) are transferred to the solution-preparing device of step (1) and directly used as raw materials for preparing carbonate-ammonia system solution, wherein the copper-containing clear solution is used as water. The process of production of the disclosure has a shortened processing line and a low energy consumption; it is not only cost saving but also can achieve goals of energy saving, reduced emission and environment pollution. 1. A process of clean production of the electronic grade high-purity copper oxide , comprising the following steps in sequence:{'sub': 2', '3', '2, '(1) continuously preparing a carbon-ammonia system solution through a solution-preparing device, wherein the molar ratio of CO:NH:HO is 1:1.3-2:17-20;'}(2) adding the carbon-ammonia system solution into a reaction vessel preloaded with metallic copper, and constantly inhaling air, oxygen or ozone under a slightly negative pressure to keep the temperature of the reaction system equal to or less than 60° C.; the negative pressure is closed when ...

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30-06-2016 дата публикации

Ti-INCLUDED OXIDE DISPERSION STRENGTHENED COPPER ALLOY AND METHOD FOR MANUFACTURING DISPERSED COPPER

Номер: US20160189820A1
Принадлежит:

The present invention relates to a Ti-included oxide dispersion strengthened copper alloy and a method for preparing oxide dispersion copper by an internal oxidation Ti-included copper alloy, which thus allows spheronization and refinement of the oxides, and reduction of distance between the oxides. According to the present invention, there is provided oxide dispersion copper having excellent hardness and tensile strength as well as electrical conductivity by performing spheronization and refinement for Ti-included oxide and thus further reducing the distance between oxides. 1. Oxide dispersion copper wherein at least one metal oxide selected from the group consisting of Ti-doped aluminum oxide , aluminum titanium oxide , iron titanium oxide , nickel titanium oxide and iron nickel titanium oxide is dispersed in copper or copper alloy.2. The oxide dispersion copper of claim 1 , wherein the metal oxide comprises at least one metal oxide selected from the group consisting of Ti-included AlO claim 1 , AlTiO claim 1 , TiO claim 1 , FeTiO claim 1 , FeTiO claim 1 , NiTiO claim 1 , and (Fe claim 1 , Ni)TiO.3. The oxide dispersion copper of claim 1 , wherein the dispersion copper is in the form of plate claim 1 , wire claim 1 , or powder.4. A Ti-included copper alloy comprising at least one metal selected from the group consisting of aluminum claim 1 , nickel claim 1 , iron claim 1 , chromium claim 1 , vanadium claim 1 , zirconium claim 1 , manganese claim 1 , cobalt claim 1 , zinc claim 1 , iridium claim 1 , molybdenum and an alloy thereof which forms a metal oxide in copper or copper alloy to prepare an oxide dispersion strengthened copper alloy by oxidation.5. The copper alloy of claim 4 , wherein the titanium is added by 0.06 parts by weight or more with respect to 100 parts by weight of the total alloy.6. The copper alloy of claim 4 , wherein x/(x+y) is 0.125 or more in which x is titanium weight and y is metal weight except copper.7. The copper alloy of claim 4 , ...

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15-07-2021 дата публикации

LIGHT-EMITTING DEVICE AND APPARATUS INCLUDING THE SAME

Номер: US20210217965A1
Принадлежит:

A light-emitting device includes a first electrode, an emission layer, an electron transport layer, a metal-nucleation inducing layer, and a second electrode. The metal-nucleation inducing layer is in direct contact with the second electrode, and includes a metal-nucleation inducing material having at least one metal-nucleation inducing group. The second electrode includes a metal-containing film that is hybridized with the metal-nucleation inducing material. The metal-nucleation inducing group is a π electron-deficient nitrogen-containing C-Ccyclic group that is unsubstituted or substituted with at least one Ror a group represented by one of Formulae 1A to 1E, and does not comprise a group represented by *—C(═O)(OH) and a cyano group. The emission efficiency and/or lifespan of the light-emitting device may be improved because of the metal-nucleation inducing layer. 1. A light-emitting device comprising:a first electrode;a second electrode facing the first electrode;an emission layer between the first electrode and the second electrode,an electron transport layer between the emission layer and the second electrode, anda metal-nucleation inducing layer between the electron transport layer and the second electrode,wherein the electron transport layer substantially does not comprise carbon,the metal-nucleation inducing layer comprises a metal-nucleation inducing material,the metal-nucleation inducing material comprises at least one metal-nucleation inducing group,{'sub': 1', '60', '1, 'the metal-nucleation inducing group is a π electron-deficient nitrogen-containing C-Ccyclic group unsubstituted or substituted with at least one Ror a group represented by one of Formulae 1A to 1E, and does not comprise a group represented by *—C(═O)(OH) and a cyano group,'}the metal-nucleation inducing layer is in direct contact with the second electrode, and [{'br': None, 'sub': '1', '*O(Q)\u2003\u2003'}, {'br': None, 'sub': '1', '*S(Q)\u2003\u2003'}, {'br': ...

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13-07-2017 дата публикации

METAL COMPOSITE OXIDE PARTICLES AND METHOD FOR PRODUCING SAME

Номер: US20170197843A1
Автор: KINOSHITA Akihiro
Принадлежит:

The metal complex oxide particles according to the present invention are represented by general formula MCuOand include copper. M is at least one of the alkaline earth metals Sr and Ba, and the metal complex oxide particles have a particle size of 1 to 100 nm and are transparent. M may further include at least one of the alkaline earth metals Mg and Ca. These metal complex oxide particles are granular p-type inorganic oxide semiconductor particles which are transparent and have a narrow particle size distribution and a uniform particle size, with there being few coarse particles of 1 μm or greater. In addition, a method for producing the metal complex oxide particles according to the present invention can easily and reliably produce transparent granular metal complex oxide particles. 19-. (canceled)10. A metal complex oxide fine particles containing copper as represented by a general formula MCu2O2 ,wherein M in the general formula is, of Sr and Ba, at least one alkaline earth metal,the metal complex oxide fine particles having a particle size of 1 to 100 nm and having transparency.11. The metal complex oxide fine particles according to claim 10 , wherein M in the general formula further includes claim 10 , of Mg and Ca claim 10 , at least one Group 2 element.12. A method of producing metal complex oxide fine particles claim 10 , comprising:a pretreatment step of pretreating copper compound powder and alkaline earth metal compound powder containing, of Sr and Ba, at least one alkaline earth metal; anda formation step of forming particulate metal complex oxide fine particles having transparency from the copper compound powder and alkaline earth metal compound powder as pretreated, using a thermal plasma flame,wherein the thermal plasma flame is derived from an inert gas.13. The method of producing metal complex oxide fine particles according to claim 12 ,wherein the pretreatment step includes a step of dispersing the copper compound powder and the alkaline earth ...

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04-07-2019 дата публикации

PHOTOCATALYTIC REDUCTION OF CARBON DIOXIDE TO METHANOL OR CARBON MONOXIDE USING CUPROUS OXIDE

Номер: US20190202762A1
Принадлежит:

Provided herein are methods of COreduction to methanol or CO using a CuO catalyst. 1. A method of converting COto methanol comprising{'sub': 2', '2, 'irradiating CO, water, and CuO having a (i i 0) facet to form methanol, wherein i is 1 to 12.'}2. The method of claim 1 , wherein the irradiating comprises exposure to ultraviolet to visible light.3. The method of claim 1 , wherein the irradiating comprises exposure to light having one or more wavelengths from 200 to 650 nm.4. The method of claim 1 , wherein the water is present as a liquid.5. The method of claim 1 , wherein the water is present as water vapor.6. The method of claim 1 , wherein the (i i 0) facet is a (110) facet.7. The method of claim 6 , wherein the CuO having a (110) facet is octahedral claim 6 , truncated cubic claim 6 , or a mixture thereof.8. The method of claim 7 , wherein the irradiating comprises exposure to ultraviolet to visible light.9. The method of claim 8 , wherein the irradiating comprises exposure to light having one or more wavelengths from 200 to 650 nm.10. The method of claim 1 , where the method exhibits a quantum efficiency of at least 50%.11. The method of claim 10 , wherein the quantum efficiency is at least 70%.12. The method of claim 1 , wherein the COis continuously flowed through a suspension of the CuO in water during the irradiating.13. The method of claim 1 , wherein the CuO having a (i i 0) facet is prepared by a method comprising admixing copper acetate claim 1 , sodium hydroxide claim 1 , glucose claim 1 , and a surfactant and heating the admixture to 60° C. for 30-90 minutes to form the CuO having a (i i 0) facet.14. The method of claim 13 , wherein the surfactant comprises sodium dodecyl sulfate.15. A method of converting COto CO comprising{'sub': 2', '2', '2', '2, 'irradiating CO, water, and MoSadsorbed onto CuO to form CO, wherein the CuO has a (i i 0) facet, and i is 1 to 12.'}16. The method of claim 15 , wherein the irradiating comprises exposure to ultraviolet to ...

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05-08-2021 дата публикации

ZINC OXIDE POWDER FOR PRODUCING ZINC OXIDE SINTERED BODY, ZINC OXIDE SINTERED BODY, AND METHOD OF PRODUCING THESE

Номер: US20210238053A1
Принадлежит:

A zinc oxide powder for producing a zinc oxide sintered body is provided with which it is possible to obtain a zinc oxide sintered body that has a small sintered particle size and high strength. This zinc oxide powder for producing a zinc oxide sintered body is used for producing a zinc oxide sintered body, wherein the Al content represented in formula (I) is greater than or equal to 20 mol ppm and less than or equal to 2 mol %. (I){nAl/(n+n)}×100. In formula (I), nrepresents the Al content in the zinc oxide powder, nrepresents the Zn content in the zinc oxide powder, and the unit of nand nis moles in both cases. 1. Zinc oxide powder for producing a zinc oxide sintered body , wherein the zinc oxide powder is used to produce a zinc oxide sintered body and has an Al content of not less than 20 mol ppm and not more than 2 mol % , the Al content being expressed by Formula (I) below:{'br': None, 'i': n', 'n', '+n, 'sub': Al', 'Zn', 'Al, '{/()}×100\u2003\u2003(I)'}{'sub': Al', 'Zn', 'Zn', 'Al, 'where, nrepresents an amount of substance of Al in the zinc oxide powder, nrepresents an amount of substance of Zn in the zinc oxide powder, and a unit for both n, and nis mole.'}2. The zinc oxide powder for producing a zinc oxide sintered body according to claim 1 , wherein the zinc oxide powder is obtained by subjecting basic zine carbonate containing aluminum to heat treatment at a temperature of not lower than 250° C. claim 1 , the basic zinc carbonate being generated by a precipitate forming reaction of an aluminum salt with a zinc salt claim 1 , a carbonate and alkali and being carbonate hydrate.3. The zinc oxide powder for producing a zinc oxide sintered body according to claim 2 , wherein the carbonate hydrate contains basic zinc carbonate expressed by Formula (1) below:{'br': None, 'sub': 4-6', '3', '1-3', '6-7', '2, 'i': '.n', 'M(CO)(OH)HO\u2003\u2003(1)'}{'sub': 1-x', 'x, 'sup': '−5', 'where, M represents ZnAl, x represents a number of 2×10to 0.02, and n represents a ...

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05-08-2021 дата публикации

ZINC OXIDE POWDER FOR PRODUCING ZINC OXIDE SINTERED BODY, ZINC OXIDE SINTERED BODY, AND METHOD OF PRODUCING THESE

Номер: US20210238054A1
Принадлежит:

A zinc oxide powder for producing a zinc oxide sintered body is provided with which it is possible to obtain a zinc oxide sintered body that has a large sintered particle size and excellent conductivity. This zinc oxide powder for producing a zinc oxide sintered body is used for producing a zinc oxide sintered body, wherein the Ga content represented in formula (I) is greater than or equal to 30 mol ppm and less than 3 mol %. (I) {n/(n+n)}×100 In formula (I), nrepresents the Ga content in the zinc oxide powder, nrepresents the Zn content in the zinc oxide powder, and the unit of nand nis moles in both cases. 2. The zinc oxide powder for producing a zinc oxide sintered body according to claim 1 , wherein the zinc oxide powder is obtained by subjecting basic zinc carbonate containing gallium to heat treatment at a temperature of not lower than 250° C. claim 1 , the basic zinc carbonate being generated by a precipitate forming reaction of a gallium salt with a zinc salt claim 1 , a carbonate and alkali and being carbonate hydrate.3. The zinc oxide powder for producing a zinc oxide sintered body according to claim 2 , wherein the carbonate hydrate contains basic zinc carbonate expressed by Formula (1) below:{'br': None, 'sub': 4-6', '3', '1-3', '6-7', '2, 'M(CO)(OH)·nHO\u2003\u2003(1)'}{'sub': 1-x', 'x, 'sup': '−5', 'where, M represents ZnGa, x represents a number of 3×10to 0.03, and n represents a number of 0 to 2.'}4. The zinc oxide powder for producing a zinc oxide sintered body according to claim 1 , wherein a crystallite size determined by X-ray diffraction is 20 to 100 nm claim 1 , a particle size determined by BET method is 20 to 150 nm claim 1 , an untamped density is not less than 0.40 g/cm claim 1 , and a tap density is not less than 0.80 g/cm.5. A zinc oxide sintered body claim 1 , wherein the zinc oxide sintered body is formed by sintering the zinc oxide powder for producing a zinc oxide sintered body according to .6. A method for preparing zinc oxide powder ...

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02-07-2020 дата публикации

Deodorant composition

Номер: US20200206095A1
Автор: Kazunori Takahashi
Принадлежит: Fujifilm Corp

Provided a deodorant composition including dispersed particles which have an average secondary particle diameter of 200 nm or less and are formed of at least one kind of particles selected from metal particles or metal oxide particles and each of which has a surface that does not contain a dispersant; and at least one kind selected from an aqueous solvent other than water or a metal salt having a monovalent, a divalent, or a trivalent metal ion.

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03-08-2017 дата публикации

Anion Conductor and Layered Metal Hydroxide

Номер: US20170222242A1
Принадлежит: TOKUYAMA CORPORATION

The present invention provides a novel anion conductor which comprises a layered metal hydroxide and can be used as an alkaline electrolyte film for use in a fuel cell or the like. An anion conductor characterized by comprising a molded product of a layered metal hydroxide represented by formula (1): [M(OH)(A)-nHO] (wherein M represents a metal that can serve as a bivalent or trivalent cation; α represents the number of valency of the metal M, A represents an atom or an atomic group that can serve as an anion, and z represents the number of valency of the anion A, wherein, when (αx-y)/z is 2 or greater, A's may be different types of anions which can serve as anions having the same valencies as each other, or may be anions having different valencies from each other; and n represents the average number of molecules of interlayer water contained per one repeating unit). The anion conductor according to the present invention is composed of an inorganic material, and therefore has excellent heat resistance and physical strength and can be operated for a longer period at a higher temperature compared with the conventional ones when used as an anion conductor for a fuel cell, an air cell or the like. 1. An anion conductor comprising a molded product of a layered metal hydroxide shown in below formula (1){'br': None, 'sub': x', 'y', '(αx-y)/z', '2, 'i': 'n', '[M(OH)(A)-HO]\u2003\u2003(1)'}wherein, “M” is a metal cation of zinc or copper, “α” is a valence of the metal cation M, “A” is an anion, and “z” is a valence of the anion A; and when (αx-y)/z is 2 or more, each “A” may be different kinds of anions having same valency or may be an anions having different valency, and “n” is a number of average molecules of an interlayer water included per one repeating unit.2. (canceled)3. The anion conductor as set forth in comprising the pressure molded product of the layered metal hydroxide of the formula (1) claim 1 , or the pressure molded product of a composition including the ...

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19-08-2021 дата публикации

METHOD FOR PREPARING NEGATIVE ELECTRODE ACTIVE MATERIAL, FOR LITHIUM SECONDARY BATTERY, COMPRISING SILICA-METAL COMPOSITE, AND NEGATIVE ELECTRODE ACTIVE MATERIAL PREPARED THEREBY

Номер: US20210253437A1

A method for preparing a negative electrode active material for a lithium secondary battery according to one aspect of the present invention comprises the steps of: uniformly mixing silicon and metal oxide; and heating or ball-milling the mixture. 1. A method of preparing a negative electrode active material for a lithium secondary battery , comprising the steps of:uniformly mixing silicon and a metal oxide; andheating or ball-milling the mixture.2. The method according to claim 1 , wherein the method is to form a silicon oxide-metal composite.3. The method according to claim 2 , wherein the silicon oxide-metal composite is formed by attaching metal particles on silicon oxide particles.4. The method according to claim 2 , wherein the silicon oxide is SiOx (0≤x≤2).5. The method according to claim 1 , wherein the metal oxide is an oxide of one or more selected from the group consisting of Co claim 1 , Cu claim 1 , Ni claim 1 , Mn Fe claim 1 , Ti claim 1 , Al claim 1 , Sn claim 1 , Ag claim 1 , Au claim 1 , Mo claim 1 , Zr claim 1 , CoSi claim 1 , CuSi claim 1 , CuSi claim 1 , MnSi claim 1 , NiSi claim 1 , FeSi claim 1 , FeSi claim 1 , TiSi claim 1 , AlSi claim 1 , SnSi claim 1 , AgSi claim 1 , AuSi claim 1 , MoSi claim 1 , and ZrSi.6. The method according to claim 1 , wherein the silicon and the metal oxide are mixed in a molar ratio of 9:1 to 19:1.7. The method according to claim 1 , wherein the heating step is performed at 400° C. to 2 claim 1 ,000° C.8. The method according to claim 1 , wherein the ball-milling step is performed at 100 rpm to 1 claim 1 ,500 rpm.9. The method according to claim 1 , further comprising the step of treating the silicon with an acid prior to the mixing step.10. A negative electrode active material for a lithium secondary battery prepared by the method according to .11. A negative electrode for a lithium secondary battery comprising the negative electrode active material of .12. A lithium secondary battery comprising the negative ...

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09-07-2020 дата публикации

GAS SENSOR DEVICE, GAS MEASURING EQUIPMENT, AND METHOD FOR FABRICATING GAS SENSOR DEVICE

Номер: US20200217815A1
Принадлежит: FUJITSU LIMITED

A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope. 1. A method for fabricating a gas sensor device , the method comprising:forming a layered structure in which a copper(I) oxide underlying layer and a copper film are deposited in this order over a substrate; andforming a copper(I) bromide sensing film by enabling the layered structure to react with a copper(II) bromide solution.2. The method as claimed in claim 1 , wherein a stepped terrace structure in which a specific crystal plane is dominant appears during formation of the copper(I) bromide sensing film. This application is a divisional of application Ser. No. 15/668,422, filed Aug. 3, 2017, which is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2016-155902 filed Aug. 8, 2016, the entire contents of which are incorporated herein by reference.The present invention relates to a gas sensor device, a gas measuring equipment, and a method for fabricating a gas sensor device.The mainstream technology in the field of gas sensors is to use a metal oxide semiconductor typified by tin dioxide (SnO) as a gas detector and measure a change in electric resistance due to adsorption of chemical substances onto the surface of the metal oxide semiconductor material. To perform high-sensitive gas measurement under such configuration, electric current is supplied from a constant current source, while heating the gas sensor device up to a temperature suitable to achieving satisfactory detection characteristics. The power consumption of the detecting circuit thus tends to be high, and especially a large quantity of electric power is consumed by a heater for heating the gas sensor device.There are some materials that can be used for a resistive-type gas sensor operative at room temperature. Copper(I) bromide (with the formula CuBr, which is also called ...

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03-09-2015 дата публикации

Method for Producing a High-purity Nanometer Zinc Oxide from Electrolytic Zinc Acid Leaching Residues by Ammonia Decarburization

Номер: US20150246822A1
Принадлежит: SICHUAN XINHONG TECHNOLOGY CO., LTD.

Disclosed is a method for producing a high-purity nanometer zinc oxide from electrolytic zinc acid leaching residues by ammonia decarburization. The method comprises: adding 0.3-0.5 kg of sodium fluorosilicate to per cubic meter of ammonia water-ammonium bicarbonate solution when leaching, and then adding 30-60 kg of slaked lime to per cubic meter of a leached solution for carrying out decarburization and refining treatment. The present invention obtained nanometer zinc oxide powder has purity of 99.7% or up, uniform particle size distribution (average particle size of 10-30 nm), specific surface area of 105 m/g or up, good fluidity and good dispersity. The treatment method is characterized by low energy consumption and high efficiency; all valuable and harmful heavy metals in the electrolytic zinc acid leaching residues are leached out to be reasonably utilized and cleaned with water, so that the obtained final leached residues are converted from electrolytic zinc acid leaching residues as high hazard wastes into ordinary solid wastes. It obtained good economic benefit and social benefit. 1. A method for producing a high-purity nanometer zinc oxide from electrolytic zinc acid leaching residues by ammonia decarburization comprising:the electrolytic zinc acid leaching residue being processed by leaching, purification for impurity removal, crystallization by ammonia evaporation, drying and calcinations, comprising:{'sub': 3', '3, 'sup': '2−', 'ammonia water-ammonium bicarbonate solution being used as the leaching agent; wherein said ammonia water-ammonium bicarbonate solution including molar concentration c(NH)=5-6 mol/L, molar concentration c(CO)=0.85-1.0 mol/L, and 0.3-0.5 kg sodium fluorosilicate being added to per cubic meter of said leaching agent;'}{'sub': '3', 'sup': '2−', 'performing heating to reduce ammonia and decarburize including adding 30-60 kg slaked lime to per cubic meter of leached solution and stirring, heating slowly to 90-98° C. until c(CO)<0.3 ...

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23-07-2020 дата публикации

METHOD FOR PREPARING HOLLOW OCTAHEDRAL CUPROUS OXIDE

Номер: US20200231458A1
Принадлежит:

The present invention provides a method for preparing a hollow octahedral cuprous oxide, which includes the following steps: (1) mixing a copper chloride solution and a sodium hydroxide solution, and then performing a precipitation reaction to obtain a precipitation solution; and (2) mixing the precipitation solution with glucose and ammonium hydroxide, and then reacting to generate the hollow octahedral cuprous oxide. In the present invention, firstly sodium hydroxide and copper chloride are reacted to generate a copper hydroxide precipitate; then glucose is used to reduce copper ions, and ammonium hydroxide is used to produce graded diffusion dissolution action on octahedral particles, such that the octahedral particles are gradually dissolved into hollow structures. It can be seen from the results of the examples that, the method provided by the present invention can prepare hollow octahedral cuprous oxide with an uniform and pure structure. 125.-. (canceled)26. A method for preparing hollow octahedral cuprous oxide , comprising the following steps:(1) mixing a copper chloride solution and a sodium hydroxide solution, and then performing a precipitation reaction to obtain a precipitation solution; and(2) mixing the precipitation solution with glucose and ammonium hydroxide, and then reacting to generate the hollow octahedral cuprous oxide;wherein the concentration of the copper chloride solution in the step (1) is 20-25 g/Lwherein the concentration of the sodium hydroxide solution in the step (1) is 0.5-1.5 mol/L;wherein the volume ratio of the copper chloride solution to the sodium hydroxide solution in the step (1) is 30:28;wherein the mass ratio of the glucose in the step (2) to copper chloride in the copper chloride solution in the step (1) is (0.1-0.3):(0.5-0.8);wherein the mass concentration of ammonium hydroxide in the step (2) is 20-30%; andthe volume ratio of the ammonium hydroxide to the copper chloride solution in the step (1) is (3-7):(25-35).27. The ...

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23-07-2020 дата публикации

COMPOSITIONS OF METAL OXIDE SEMICONDUCTOR NANOMATERIALS

Номер: US20200231459A1
Принадлежит:

The present invention provides composition comprising a metal oxide semiconductor nanomaterial. 1. A metal oxide semiconductor nanomaterial comprising: a metal oxide A and a metal oxide B; wherein the metal oxide A and the metal oxide B are independently selected from a group comprising an alkaline earth metal , a d-transition metal , f-transition metal or combinations thereof; and wherein the nanomaterial comprises clusters of metal oxide quantum dots.2. The metal oxide semiconductor nanomaterial according to claim 1 , wherein the metal oxide quantum dots union comprise heterojunctions and the heterojunctions comprise at least one n-type metal oxide nanoparticle and at least one p-type metal oxide nanoparticle.3. The metal oxide semiconductor nanomaterial of claim 1 , wherein the metal oxide semiconductor nanomaterial may or not comprises at least two metals claim 1 , where one metal is dominant than the second metal claim 1 , and the less dominant metal comprises more than 10% by weight of the metal oxide A and less than 30% by weight of metal oxide A and the dominant metal comprises more than 70% by weight of the metal oxide and less than 90% by weight of the metal oxide.4. The metal oxide semiconductor nanomaterial of claims 1 , wherein the nanomaterial further comprises at least one polymer material claims 1 , at least one organic molecule claims 1 , or combinations thereof claims 1 , wherein the polymer material comprises chitosan claims 1 , alginate claims 1 , gelatin claims 1 , carboxymethyl cellulose claims 1 , polyethylene glycol claims 1 , or combinations thereof; and wherein the organic molecule comprises octadecanethiol claims 1 , perfluorothiol claims 1 , cysteine claims 1 , mercaptoalkanes claims 1 , citric acid claims 1 , oleic acid claims 1 , or combinations thereof.5. The metal oxide semiconductor nanomaterial of claim 1 , wherein the nanomaterial exhibits an inhomogeneous electrical conductivity in materials and wherein the nanomaterial exhibits ...

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23-07-2020 дата публикации

PROCESSES FOR PREPARING METAL OXIDE SEMICONDUCTOR NANOMATERIALS

Номер: US20200231460A1
Принадлежит:

The present invention provides processes for preparing metal oxide semiconductor nanomaterials. 1. A method for preparing a metal oxide semiconductor nanomaterial; the method comprises:a. providing a first aqueous solution comprising a soluble metal salt A and a soluble metal salt B;b. providing a second aqueous solution comprising at least one soluble anion source;c. adding the second aqueous solution to the first solution to form an insoluble metal oxide semiconductor nanomaterial precursor; andd. isolating the aqueous insoluble metal oxide semiconductor nanomaterial;e. drying the aqueous insoluble metal oxide semiconductor nanomaterial; andf. thermal decomposition of the aqueous insoluble metal oxide semiconductor nanomaterial precursor forming the metal oxide nanomaterial.2. The method of claim 1 , wherein the metal of the soluble metal salt A and soluble metal salt B are independently selected from a group comprising an alkaline earth metal claim 1 , a transition metal claim 1 , or combinations thereof.3. The method of claim 2 , wherein the metal of the soluble metal salt A and the soluble metal salt B are independently selected from a group consisting titanium claim 2 , manganese claim 2 , nickel claim 2 , silver claim 2 , calcium claim 2 , magnesium claim 2 , zinc claim 2 , copper claim 2 , or combinations thereof.4. The method of claim 3 , wherein the metal of the soluble metal salt A and the soluble metal salt B are independently selected from a group consisting zinc claim 3 , copper claim 3 , or combinations thereof.5. The method of claim 1 , wherein the first aqueous solution further comprises one or more different soluble metal salts than the soluble metal salt A and the soluble metal salt B.6. The method of claim 1 , wherein the first aqueous solution further comprises at least one stabilizer.7. The methods of claim 6 , wherein the stabilizer comprises a polyethylene glycol (PEG) claim 6 , polypropylene glycol (PPG) claim 6 , polyvinylpyrrolidone (PVP) ...

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09-09-2021 дата публикации

Process For The Preparation Of Nanoparticles

Номер: US20210276882A1
Принадлежит:

The present invention relates to a “safety-by-design” method for the preparation of nanoparticles, to a method for the preparation of a nanocomposite material, and to the use of a direct liquid injection device so as to prepare nanoparticles or nanocomposite materials in a “safety-by-design” process. 1. A method for the preparation of nanoparticles selected from the group consisting of metal nanoparticles , metal oxide nanoparticles and semiconductor nanoparticles , at least one reacting chamber including at least one first inlet for admission of said liquid phase in said reacting chamber, at least one second inlet for admission of said gas phase in said reacting chamber, and an outlet for expulsion of said nanoparticles from said reacting chamber,', 'a liquid injector arranged upstream of the first inlet for injecting or spraying said liquid phase into said reacting chamber,', 'an injector of nanoparticles arranged downstream of the outlet for injecting or spraying said nanoparticles through an outlet of said nanoparticles injector, and', 'control means for controlling the injection or the spray of said liquid phase and/or said nanoparticles, and wherein said method comprises:', 'a step 1) of injecting a liquid phase comprising at least one nanoparticles precursor selected from the group consisting of precursors of metals, precursors of metal oxides and precursors of semiconductors in said reacting chamber through said liquid injector,', 'a step 2) of contacting said liquid phase with a gas phase comprising at least one carrier gas and at least one reacting gas, said step 2) being carried out in said reacting chamber,', 'a step 3) of reacting the nanoparticles precursor with the reacting gas so as to form nanoparticles, and', 'a step 4) of expulsion of the nanoparticles produced in step 3) from the reacting chamber through the nanoparticles injector, said nanoparticles being under the form of an aerosol at the outlet of the nanoparticles injector., 'wherein said ...

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27-11-2014 дата публикации

NANOPLATELET METAL HYDROXIDES AND METHODS OF PREPARING SAME

Номер: US20140349116A1
Автор: Maddan Orville Lee
Принадлежит:

Nanoplatelet forms of metal hydroxide and metal oxide are provided, as well as methods for preparing same. The nanoplatelets are suitable for use as fire retardants and as agents for chemical or biological decontamination. 1. Nanoplatelets having an average platelet diameter of from about 30 nm to about 3500 nm and an average thickness of from about 1 nm to about 400 nm , wherein the nanoplatelet is an oxide or a hydroxide of a metal selected from the group consisting of beryllium , scandium , chromium , gallium , yttrium , niobium , molybdenum , technetium , ruthenium , rhodium , palladium , cadmium , indium , tin , lutetium , hafnium tantalum , tungsten rhenium osmium iridium platinum , gold , mercury , thallium , lead , bismuth , radium , and mixtures thereof.2. Nanoplatelets of claim 1 , comprising individual crystallites.3. Nanoplatelets of claim 1 , having an average aspect ratio of from about 15 to about 70.4. Nanoplatelets of claim 3 , having an average platelet diameter of from about 40 nm to about 120 nm and an average thickness of from about 1 nm to about 4 nm.5. Nanoplatelets of claim 3 , having an average BET specific surface area of from about 100 m/g to about 150 m/g claim 3 , and an average zeta potential of from about +60 mV to about −60 mV.6. Nanoplatelets of claim 3 , having an average BET specific surface area of from about 100 m/g to about 150 m/g claim 3 , and an average zeta potential of from about −4 mV to about −5 mV.7. Nanoplatelets of claim 1 , comprising at least one metal hydroxide.8. Nanoplatelets of claim 1 , comprising at least one metal oxide.9. Nanoplatelets of claim 1 , in a form of rolled nanotubes.10. Nanoplatelets having an average platelet diameter of from about 30 nm to about 3500 nm and an average thickness of from about 1 nm to about 400 nm claim 1 , wherein the nanoplatelet is an oxide or a hydroxide of a metal selected from the group consisting of lithium claim 1 , boron claim 1 , sodium claim 1 , potassium claim 1 , ...

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15-08-2019 дата публикации

FINE PARTICLES, DISPERSION LIQUID, AND DEODORIZER

Номер: US20190248669A1
Автор: Takahashi Kazunori
Принадлежит: FUJIFILM Corporation

A fine particle in which a surface of a copper oxide fine particle (a) is coated with a coating layer (b) containing a monovalent copper compound, in which the fine particle has a specific surface area of 100 m/g or greater, an average primary particle diameter in a range of 5 to 20 nm, and an average secondary particle diameter in a range of 5 to 50 nm, is provided. 1. A fine particle in which a surface of a copper oxide fine particle (a) is coated with a coating layer (b) containing a monovalent copper compound ,{'sup': '2', 'wherein the fine particle has a specific surface area of 100 m/g or greater,'}an average primary particle diameter in a range of 5 to 20 nm, andan average secondary particle diameter in a range of 5 to 50 nm.2. The fine particle according to claim 1 ,wherein a surface of the coating layer (b) containing a monovalent copper compound is further coated with an organic layer (c) derived from an acetic acid or an acetate.3. The fine particle according to claim 1 ,wherein the monovalent copper compound is a cuprous oxide.4. The fine particle according to claim 2 ,wherein the monovalent copper compound is a cuprous oxide.5. The fine particle according to claim 1 , {'br': None, 'i': A', 'A', '+A, 'sub': 1', '1', '2, 'Peak area ratio (1)=/()'}, 'wherein the following peak area ratio (1) of the fine particle in X-ray diffraction using a CuKα as an X-ray source is in a range of 0.01 to 0.10,'}{'sub': '1', 'wherein Ais a peak area of a peak derived from a divalent CuO in a range of 938.5 eV to 948 eV; and'}{'sub': '2', 'Ais a peak area of a peak derived from all components containing Cu in a range of 928 eV to 938.5 eV.'}6. The fine particle according to claim 2 , {'br': None, 'i': A', 'A', '+A, 'sub': 1', '1', '2, 'Peak area ratio (1)=/()'}, 'wherein the following peak area ratio (1) of the fine particle in X-ray diffraction using CuKα as an X-ray source is in a range of 0.01 to 0.10,'}{'sub': '1', 'wherein Ais a peak area of a peak derived from a ...

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04-12-2014 дата публикации

Superconducting wire and superconducting coil

Номер: US20140357495A1
Автор: Masanori Daibo
Принадлежит: Fujikura Ltd

A superconductor wire includes: a superconducting laminate that includes: a substrate and an intermediate layer; a superconductor layer, and a metal stabilization layer which are laminated on the substrate; and an insulation coating layer that covers an outer surface of the superconducting laminate and is formed by baking a resin material. Further, a maximum height Rz of at least a part of the outer surface of the superconducting laminate covered with the insulation coating layer is 890 nm or less.

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04-11-2021 дата публикации

SURFACE MODIFIERS FOR PREPARING AGE-RESISTANT INORGANIC SALTS

Номер: US20210340020A1
Принадлежит:

Humidity and temperature may impact the physical properties of Basic Copper Nitrate (BCN), (Cu(OH)(NO), BCN) inorganic particles. The use of hydrophobic surface coatings on these inorganic particles have been found to protect and/or minimize the amount of surface degradation over a period of time. 1) Basic Copper Nitrate (BCN) particles , of the chemical formula Cu(OH)(NO) , for use in ballistic and gas generant applications , wherein said particles are coated with a hydrophobic surface coating.2) The particles of claim 1 , wherein the hydrophobic surface coating is selected from organic surfactants claim 1 , polyols claim 1 , alkanolamines and combinations thereof.3) The particles of claim 2 , wherein the hydrophobic surface coating is selected from the group consisting of glycerin claim 2 , dextrose claim 2 , sorbitol and triethanolamine.4) The particles of claim 1 , wherein the hydrophobic surface coating is glycerin.5) The particles of claim 2 , wherein the hydrophobic surface coating is about 0.1 to about 5% by weight of the total mass of particles.6) The particles of claim 2 , wherein the hydrophobic surface coating is about 0.5 to about 4% by weight of the total mass of particles.7) The particles of claim 4 , wherein the hydrophobic surface coating is about 0.1 to about 5% by weight of the total mass of particles.8) The particles of claim 4 , wherein the hydrophobic surface coating is about 0.5 to about 4% by weight of the total mass of particles.9) The particles of claim 4 , wherein the hydrophobic surface coating is about 1% to about 3% by weight of the total mass of particles.10) A ballistic basic copper nitrate composition treated with a hydrophobic surface modifying substance.11) The ballistic basic copper nitrate composition of wherein the surface modifying substance is selected form the group consisting of organic surfactants claim 10 , polyols and combinations thereof.12) The ballistic basic copper nitrate composition of wherein the surface modifying ...

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29-08-2019 дата публикации

Cuprous oxide particle, method of producing the same, photosintering composition, method of forming conductive film using the same and paste of cuprous oxide particles

Номер: US20190263674A1
Автор: Mari Tokutake, Shinji Abe
Принадлежит: Nippon Chemical Industrial Co Ltd

Provided is a photosintering composition including cuprous oxide particles containing at least one additive element selected from the group consisting of tin, manganese, vanadium, cerium and silver, and a solvent. It is preferable that the cuprous oxide particle contain 1 ppm to 30,000 ppm of tin as the additive element. It is also preferable that the photosintering composition contain 3% by mass to 80% by mass of the cuprous oxide particles and 20% by mass to 97% by mass of the solvent.

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28-09-2017 дата публикации

METAL OXIDE PARTICLES FOR BONDING, SINTERING BINDER INCLUDING SAME, PROCESS FOR PRODUCING METAL OXIDE PARTICLES FOR BONDING, AND METHOD FOR BONDING ELECTRONIC COMPONENTS

Номер: US20170278589A1
Принадлежит: Hitachi, Ltd.

Provided are: a sintering binder including nanoparticles, a method for producing the sintering binder, and a method for bonding using the sintering binder. The sintering binder mainly includes cuprous oxide nanoparticles, combines particle stability with bondability, and less undergoes ion migration. A composite particle including metallic copper with the remainder being cuprous oxide and inevitable impurities is used for bonding typically of metals. The composite particle structurally includes metallic copper dispersed inside the particle and has an average particle size of 1000 nm or less. 1. A sintering binder comprising:composite particles; anda dispersion medium, metallic copper;', 'cuprous oxide; and', 'inevitable impurities,, 'the composite particle includingthe composite particles including the cuprous oxide in a content of 78 mass percent or more of the total amount of the composite particles,the composite particles having a structure in which the metallic copper is dispersed inside each of the composite particles,the composite particles having an average particle size of 1000 nm or less,the cuprous oxide having a size of 2 nm to 500 nm,the metallic copper having a size of 0.1 nm to 100 nm,the sintering binder including the composite particles in a content of 90 mass percent or more of the total amount of the sintering binder.2. (canceled)3. (canceled)4. A method for producing a sintering binder , the sintering binder including:composite particles; anda dispersion medium, metallic copper;', 'cuprous oxide; and', 'inevitable impurities,, 'the composite particles includingthe composite particles including the cuprous oxide in a content of 78 mass percent or more of the total amount of the composite particles,the composite particles having a structure in which the metallic copper is dispersed inside each of the composite particles,the composite particles having an average particle size of 1000 nm or less,the cuprous oxide having a size of 2 nm to 500 nm,the ...

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15-10-2015 дата публикации

METHOD FOR PRODUCING CUPROUS OXIDE FINE PARTICLES, CUPROUS OXIDE FINE PARTICLES AND METHOD OF PRODUCING CONDUCTOR FILM

Номер: US20150291439A1
Принадлежит: NISSHIN ENGINEERING INC.

A cuprous oxide fine particle production method includes a production step of producing cuprous oxide fine particles using copper compound powder and a thermal plasma flame. The thermal plasma flame is derived from an inert gas. The production step includes a step of supplying into the thermal plasma flame, the copper compound powder dispersed using a carrier gas or slurry obtained by dispersing the copper compound powder in water in the form of droplets. The production step preferably further includes a step of supplying a cooling gas to an end portion of the thermal plasma flame. 1. A cuprous oxide fine particle production method comprising:a production step of producing cuprous oxide fine particles using copper compound powder and a thermal plasma flame,wherein the thermal plasma flame is derived from an inert gas.2. The cuprous oxide fine particle production method according to claim 1 , wherein the production step comprises a step of dispersing the copper compound powder using a carrier gas to supply the copper compound powder into the thermal plasma flame.3. The cuprous oxide fine particle production method according to claim 1 , wherein the production step comprises:a step of dispersing the copper compound powder in water to obtain a slurry; anda step of converting the slurry into droplets to supply the droplets into the thermal plasma flame.4. The cuprous oxide fine particle production method according to claim 1 , wherein the copper compound powder is cupric oxide powder.5. The cuprous oxide fine particle production method according to claim 1 , wherein the production step further comprises a step of supplying a cooling gas to an end portion of the thermal plasma flame.6. The cuprous oxide fine particle production method according to claim 1 , wherein the inert gas is at least one selected from helium gas claim 1 , argon gas and nitrogen gas.7. Cuprous oxide fine particles having a particle size of 1 to 100 nm and satisfying 0.5 Dp≦Dc≦0.8 Dp where the ...

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05-10-2017 дата публикации

Gas sensor nanocomposite membranes

Номер: US20170284956A1

A gas permeable, liquid impermeable membrane for use with gas sensors consists of a film forming polymer which incorporates nanoparticles selected to improve one or more of the following: permeability to gases, to selectively regulate permeability of selected gases through the membrane, to inhibit microbial growth on the membrane. A capsule shaped container consists of wall material biocompatible with a mammal GI tract and adapted to protect the electronic and sensor devices in the capsule, which contains gas composition sensors, pressure and temperature sensors, a microcontroller, a power source and a wireless transmission device. The microprocessor receives data signals from the sensors and converts the signals into gas composition and concentration data and temperature and pressure data for transmission to an external computing device. The capsule wall incorporates gas permeable nano-composite membranes with embedded catalytic and nano void producing nanoparticles, enhancing the operation, selectivity and sensitivity of the gas sensors.

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04-10-2018 дата публикации

METHOD OF MAKING METAL AND METAL OXIDE NANOPARTICLES

Номер: US20180282173A1
Принадлежит:

Methods for preparing solid metal oxide nanoparticles via controlled oxidation comprising preparing a plurality of metal nanoparticles, contacting the plurality of metal nanoparticles with an aqueous agent to provide metal oxide nanoparticles having a desired particle size, and removing the resulting metal oxide nanoparticles from the aqueous agent. Aspects of the present disclosure also relate to solid metal oxide nanoparticles obtained by this method. 1. A method for preparing solid metal oxide nanoparticles , the method comprising:preparing a plurality of metal nanoparticles having a first particle size;contacting the plurality of metal nanoparticles with an aqueous agent to provide solid metal oxide nanoparticles having a second particle size; andremoving the metal oxide nanoparticles from the aqueous agent,wherein the second particle size is smaller than the first particle size.2. The method according to claim 1 , wherein the metal comprises copper.3. The method according to claim 2 , wherein the metal oxide comprises CuO.4. The method according to claim 1 , wherein the first particle size corresponds to a diameter of from about 25 to 75 nm.5. The method according to claim 1 , wherein the second particle size corresponds to a diameter of from about 1 to 10 nm.6. The method according to claim 1 , wherein preparing the plurality of metal nanoparticles comprises combining a metal precursor solution and a reducing agent solution to form the metal nanoparticles.7. The method according to claim 6 , wherein the metal precursor solution comprises a metal component claim 6 , a stabilizer claim 6 , and water.8. The method according to claim 7 , wherein the metal component comprises Cu(NO)and/or hydrates thereof claim 7 , and the stabilizer comprises CTAB.9. The method according to claim 6 , wherein the reducing agent solution comprises a reducing agent claim 6 , a stabilizer claim 6 , and water.10. The method according to claim 9 , wherein the reducing agent comprises ...

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22-10-2015 дата публикации

METHOD FOR MANUFACTURING OF METAL OXIDE NANOPARTICLES AND METAL OXIDE NANOPARTICLES THEREBY

Номер: US20150303449A1
Принадлежит:

The present invention relates to a method for preparing metal oxide nanoparticles and metal oxide nanoparticles prepared thereby, and more particularly, to an method for preparing metal oxide nanoparticles, the method including: dipping a cathode and an anode formed of a metal for forming oxide, in an inorganic electrolyte solution containing halogen salt (step 1); and applying voltage to the anode and the cathode to form, on the anode, metal oxide forming an anode surface (step 2). According to a method for preparing metal oxide nanoparticles of the present invention, disadvantages of typical nanoparticle synthesizing methods may be solved to cheaply and rapidly manufacture nanoparticles having various structures through a simple and single process without using a surfactant. Since an anodizing method requires only a power supply device having a low voltage of 30 V or less and an electrolyte, and is performed at room temperature, the anodizing method does not require an additional device or installation. Also, from just after the power supply device is turned on, metal oxide nanoparticles may be rapidly formed, nanoparticles having excellent crystallinity may be produced, and factors of the anodizing method, such as voltage, temperature, an electrolyte, and an electrolyte concentration may be changed to simply adjust a shape of the nanoparticles. Therefore, the present technology is expected to improve economical efficiency of the metal oxide nanoparticles to also contribute to the mass production of the metal oxide nanoparticles. 1. A method for preparing metal oxide nanoparticles , the method comprising:dipping a cathode and an anode formed of a metal for forming oxide, in an inorganic electrolyte solution containing a halogen salt (step 1); andapplying voltage to the anode and the cathode to form, on the anode, a metal oxide forming an anode surface (step 2).2. The method of claim 1 , wherein a surfactant is not used.3. The method of claim 1 , wherein the metal ...

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19-10-2017 дата публикации

METHOD AND/OR SYSTEM FOR SYNTHESIS OF ZINC OXIDE (ZnO)

Номер: US20170297920A1
Принадлежит:

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation. 1. An apparatus comprising: a wafer substrate holder; and a fluid sealable chamber enclosure;the chamber enclosure having a cylindrical-like shape and a cavity sized to receive and enclose the wafer substrate holder;the chamber enclosure to heat a zinc oxide forming growth solution to also be enclosed within the chamber enclosure cavity;the wafer substrate holder to be received within the chamber enclosure in a manner to relatively securely position at least one wafer substrate so that flat surfaces of the at least one wafer substrate are substantially mutually parallel to flat ends of the chamber enclosure; anda drive mechanism to engage with the chamber enclosure and/or the wafer substrate holder in a manner to mix the growth solution while enclosed within the chamber enclosure cavity.2. The apparatus of claim 1 , wherein a drive mechanism to engage with the chamber enclosure and/or the wafer substrate holder in a manner to mix the growth solution while enclosed within the chamber enclosure cavity comprises a drive mechanism to engage with the chamber enclosure and/or the wafer substrate holder to mix the growth solution via relative rotation between the chamber enclosure and the wafer substrate holder.3. The apparatus of claim 2 , wherein the wafer substrate holder and/or the chamber enclosure to rotate in a manner in which one rotates relative to the other about an axis of rotation located approximately perpendicular to the flat surfaces of the at least one wafer substrate and approximately passing through the center of the at least one wafer substrate.4. The apparatus of claim 3 , wherein the wafer substrate holder and/or the chamber enclosure to rotate in a manner with one relative to the other and at a relative speed to result in a relatively uniform ...

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19-10-2017 дата публикации

METHOD AND/OR SYSTEM FOR SYNTHESIS OF ZINC OXIDE (ZnO)

Номер: US20170297922A1
Принадлежит:

Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation. 1. A method comprising: one or more sequences of operations in a fluid handling system (FHS) for a relatively low temperature aqueous solution zinc oxide growth system (ZGS) to perform pre-growth operations to prepare a ZGS at least for execution of a particular zinc oxide growth process formulation , the one or more sequences comprising:executing a sequence of operations to verify adequate fluid sealing of a fluid sealable chamber enclosure;executing a sequence of operations to fill an unpressured, empty vessel to a fill level with zinc oxide growth solution and to pressurize the vessel after containing zinc oxide solution; and/orexecuting a sequence of operations to transfer the zinc oxide growth solution from the vessel containing zinc oxide solution to the chamber enclosure for zinc oxide growth/synthesis.2. The method of claim 1 , wherein the executing operations to verify adequate fluid sealing of a fluid sealable chamber enclosure comprises pressurizing the chamber enclosure and confirming that the pressure within the chamber enclosure remains stable.3. The method of claim 1 , wherein the executing operations to fill an unpressured claim 1 , empty vessel with zinc oxide growth solution comprises employing optical sensors to measure fill level of the zinc oxide growth solution for the vessel.4. The method of claim 1 , wherein the executing operations to transfer the zinc oxide growth solution from the vessel to the chamber enclosure for zinc oxide growth/synthesis comprises utilizing a pressure differential between the chamber enclosure and the vessel containing zinc oxide growth solution to drive growth solution to flow from the pressure vessel to the chamber enclosure.5. The method of claim 4 , wherein the executing operations to transfer the zinc oxide ...

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20-10-2016 дата публикации

Metal chalcogenide thin film electrode, method for the production thereof and use

Номер: US20160305035A1
Принадлежит:

The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: 1. A method for producing a metal chalcogenide thin film electrode , comprising the steps:(a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution,(b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and(c) during and/or after step (b), contacting the substrate with an elementary chalcogen, forming a metal chalcogenide layer on the substrate.2. The method according to claim 1 , wherein the metal is able to form a metal halide compound in which the metal is present in the oxidation state +2 or higher.3. The method according to claim 1 , wherein in step (b) the metal is deposited onto the substrate by reduction and because of the negative voltage the substrate is an electron transmitter during the reduction.4. The method according to claim 1 , wherein the metal comprises at least one transition metal.5. The method according to claim 1 , wherein the metal is a solid metal body.6. The method according to claim 1 , wherein the elementary chalcogen is elementary oxygen claim 1 , elementary sulphur or elementary selenium.7. The method according to claim 1 , wherein the substrate comprises an n-semiconductor material.8. The method according to claim 1 , wherein the elementary halogen is iodine (I) or bromine (Br).9. The method according to claim 1 , wherein the non-aqueous solvent is an organic solvent.10. The method according to claim 1 , wherein a proportion of water in the non-aqueous solvent is at most 0.2 wt. %.11. The method according to claim 1 , wherein contacting the substrate with the chalcogen is performed by the presence of the chalcogen in the solution or by contacting the substrate with a chalcogen-containing atmosphere.12. The method according to claim 1 , comprising ...

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17-09-2020 дата публикации

METHOD FOR SYNTHESIZING COPPER SULFIDE NANO POWDER USING PLASMA SYNTHESIS

Номер: US20200290887A1
Принадлежит:

Disclosed is a method for synthesizing copper sulfide nano powder using plasma synthesis. The method comprises providing a copper compound to a plasma apparatus, adding a sulfur, and performing a plasma process with respect to the copper compound and the sulfur for synthesizing a nano copper sulfide.

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26-10-2017 дата публикации

NANOCRYSTALLINE CELLULOSE, ITS PREPARATION AND USES OF SUCH NANOCRYSTALLINE CELLULOSE

Номер: US20170306056A1
Принадлежит: Technische Universität München

The present invention relates to nanocrystalline cellulose, an efficient way of its preparation and to uses of such nanocrystalline cellulose. The present invention also relates to porous metal oxides having a chiral nematic structure which are prepared using nanocrystalline cellulose. 1. A method of preparing nanocrystalline cellulose , comprising the steps:a) providing cellulose fibers,b) subjecting said cellulose fibers to an acidic hydrolysis,c) stopping the hydrolysis by addition of a base.2. The method according to claim 1 , comprising the further step:d) isolating the nanocrystalline cellulose resulting from the performance of steps b)-c).3. The method according to claim 2 , wherein isolating the nanocrystalline cellulose in step d) is achieved by centrifugation and washing.4. The method according to claim 3 , wherein step d) is achieved by performing a first centrifugation on the product of step c) claim 3 , followed by a washing step and a further centrifugation step.5. The method according to claim 4 , wherein the washing step and the further centrifugation step are performed n-times claim 4 , wherein n=1-10.6. The method according to claim 1 , wherein said hydrolysis in step b) is performed by the presence of a mineral acid.7. The method according to claim 1 , wherein said base that is added in step c) is selected from the group comprising metal hydroxides claim 1 , metal oxides and NH.8. The method according to claim 1 , wherein said hydrolysis in step b) is performed by the presence of a mineral acid claim 1 , and wherein said base is{'sub': 3', '3, 'i) a metal hydroxide or NH, and wherein said metal hydroxide or NHis added in step c) in a molar ratio of base: mineral acid in a range of from 1:5 to 5:1, or'}ii) a metal oxide, wherein said metal oxide in step c) is added in a molar ratio of metal oxide: mineral acid in a range of from approximately 1:10 to 1:1.9. The method according to claim 7 , wherein said metal hydroxide is an alkali metal hydroxide ...

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18-10-2018 дата публикации

OXIDE SUPERCONDUCTING WIRE

Номер: US20180301248A1
Принадлежит: Sumitomo Electric Industries, Ltd.

An oxide superconducting wire includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The oriented metal substrate has an in-plane orientation Δϕ of 7° or less. The intermediate layer is formed of a single layer. 1: An oxide superconducting wire comprising:an oriented metal substrate;an intermediate layer formed on the oriented metal substrate; andan oxide superconducting layer formed on the intermediate layer,the oriented metal substrate having an in-plane orientation (Δϕ) of 7° or less,the intermediate layer being formed of a single layer.2: The oxide superconducting wire according to claim 1 , whereinthe oriented metal substrate is a clad substrate.3: The oxide superconducting wire according to claim 1 , whereinthe intermediate layer has a thickness of 10 nm or more.4: The oxide superconducting wire according to claim 1 , whereinthe intermediate layer has an in-plane orientation of 8° or less.5: The oxide superconducting wire according to claim 1 , whereinthe oriented metal substrate includes an oxide layer at a top portion in contact with the intermediate layer.6: The oxide superconducting wire according to claim 2 , whereinthe intermediate layer has a thickness of 10 nm or more.7: The oxide superconducting wire according to claim 2 , whereinthe intermediate layer has an in-plane orientation of 8° or less.8: The oxide superconducting wire according to claim 2 , whereinthe oriented metal substrate includes an oxide layer at a top portion in contact with the intermediate layer.9: The oxide superconducting wire according to claim 3 , whereinthe intermediate layer has an in-plane orientation of 8° or less.10: The oxide superconducting wire according to claim 3 , whereinthe oriented metal substrate includes an oxide layer at a top portion in contact with the intermediate layer.11: The oxide superconducting wire according to claim 4 , whereinthe oriented ...

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05-11-2015 дата публикации

COPPER FLUORIDE BASED NANOCOMPOSITES AS ELECTRODE MATERIALS

Номер: US20150318547A1

The present invention relates to primary and secondary electrochemical energy storage systems, particularly to such systems as battery cells, which use materials that take up and release ions as a means of storing and supplying electrical energy. 1. A nanocomposite comprising a copper fluoride compound , wherein the nanocomposite composition is formed of crystallites of about 1 nm to about 100 nm in diameter.2. The nanocomposite according to claim 1 , wherein said nanocomposite demonstrates a specific capacity of about 100 mAh/g to about 600 mAh/g at a voltage of about 2 volts to about 4 volts when compared to a Li/Li+ reference potential.3. The nanocomposite according to claim 1 , wherein the copper fluoride compound comprises CuF.4. The nanocomposite according to claim 1 , further comprising a metal.5. The nanocomposite according to claim 4 , wherein the metal is selected from the group consisting essentially of Fe claim 4 , Co claim 4 , Ni claim 4 , Mn claim 4 , V claim 4 , Mo claim 4 , Pb claim 4 , Sb claim 4 , Bi claim 4 , Nb claim 4 , Zn claim 4 , Sn claim 4 , Ag and Cr.6. The nanocomposite according to claim 1 , further comprising carbon.7. (canceled)8. The nanocomposite according to claim 1 , further comprising oxygen.9. The nanocomposite according to claim 1 , wherein the copper fluoride compound comprises CuFO claim 1 , wherein z>w and w>0.10. The nanocomposite according to claim 1 , wherein the copper fluoride compound comprises CuMeFO claim 1 , wherein Me is a metal and x+z>y+w and w>0.11. The nanocomposite according to claim 10 , wherein Me is a transition metal.12. The nanocomposite according to claim 10 , wherein Me is selected from the group consisting essentially of Fe claim 10 , Co claim 10 , Ni claim 10 , Mn claim 10 , V claim 10 , Mo claim 10 , Pb claim 10 , Sb claim 10 , Bi claim 10 , Nb claim 10 , Sn claim 10 , Zn claim 10 , Ag and Cr.13. The nanocomposite according to claim 1 , wherein the copper fluoride compound comprises a compound of the ...

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19-11-2015 дата публикации

MICRONUTRIENT SUPPLEMENT MADE FROM COPPER METAL

Номер: US20150328257A1
Автор: Leisure Nicholas J.
Принадлежит:

A micronutrient supplement which is made by reacting together copper metal and either hydrochloric acid and/or cupric chloride under oxidizing conditions.

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01-11-2018 дата публикации

Sinter paste with coated silver oxide on noble and non-noble surfaces that are difficult to sinter

Номер: US20180311774A1
Принадлежит: Heraeus Deutschland GmbH and Co KG

A mixture contains metal oxide particles that are coated with an organic compound. The organic compound is represented by Formula I: R 1 —COR 2   (I), wherein R 1 is an aliphatic residue having 8 to 32 carbon atoms, wherein R 2 is either —OM or comprises the moiety —X—R 3 , wherein X is selected from the group consisting of O, S, N—R 4 , wherein R 4 is a hydrogen atom or an aliphatic residue, wherein R 3 is a hydrogen atom or an aliphatic residue, and wherein M is a cation. The mixture may be used to connect components and/or to produce a module. A method for producing the mixture is also provided.

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09-11-2017 дата публикации

HYBRID ORGANIC-INORGANIC PEROVSKITE-BASED SOLAR CELL WITH COPPER OXIDE AS A HOLE TRANSPORT MATERIAL

Номер: US20170324053A1

The hybrid organic-inorganic perovskite-based solar cell with copper oxide as a hole transport material includes a transparent conducting film layer () sandwiched between a glass substrate () and a titanium dioxide layer (). The transparent conducting film layer () can be fluorine-doped tin oxide. A lead methylammonium tri-iodide perovskite layer () is formed on the titanium dioxide layer (), such that the titanium dioxide layer () is sandwiched between the lead methylammonium tri-iodide perovskite layer () and the transparent conducting film layer (). A layer of copper oxide (Cu2O) (), as a hole transport material, is formed on the lead methylammonium tri-iodide perovskite layer (). The lead methylammonium tri-iodide perovskite layer () is sandwiched between the layer of hole transport material () and the titanium dioxide layer (). A gold contact () is formed on the layer of hole transport material (). 1. A hybrid organic-inorganic perovskite-based solar cell with copper oxide as a hole transport material , comprising:a glass substrate;a transparent conducting film layer formed on the glass substrate;a layer of electron transport material formed on the transparent conducting film layer such that the transparent conducting film layer is sandwiched between the glass substrate and the layer of electron transport material;a light absorber layer formed on the electron transport material layer, the layer of electron transport material being sandwiched between the light absorber layer and the transparent conducting film layer;a layer of hole transport material formed on the light absorber layer, the hole transport material including copper oxide, the light absorber layer being sandwiched between the layer of hole transport material and the layer of electron transport material; anda conductive metallic contact formed on the layer of hole transport material, the layer of hole transport material being positioned between the conductive metallic contact and the light absorber ...

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15-10-2020 дата публикации

WATER BALANCE IN A CHLORIDE HEAP LEACH

Номер: US20200325556A1
Принадлежит: BHP CHILE INC

A method of maximising the amount of water available for rinsing in a high-chloride heap leach operation which includes the step of using process make-up water in the range of 0.05 to 0.35 m3/ton of ore to rinse leach residue ore, in the heap, thereby to displace a chloride-containing aqueous liquor from the leached ore. 1. (canceled)2. The method according to claim 3 , wherein the quantity of process make-up water in the rinsing step is between 0.1 and 0.15 m/ton of ore.3. A method of maximizing an amount of water which is available for rinsing in a high-chloride heap leach operation claim 3 , the method comprising:{'sup': '3', 'using process make-up water in the range of 0.05 to 0.35 m/ton of ore to rinse leached residue ore, in a heap; and'}displacing a chloride-containing aqueous liquor from the leached residue ore due to the using process make-up water rinsing the leached residue ore, wherein an amount of process make-up water, available for rinsing, is increased by utilizing a multi-stage counter-current loaded organic solvent scrub circuit to reduce a chloride concentration in an organic phase.4. The method according to claim 3 , further comprising increasing an amount of the process make-up water available for rinsing by at least one of the following:increasing water evaporation from a leach circuit;diverting rain water from the heap; andreducing a demand for electrowinning bleed make-up water by effective scrubbing of a loaded organic.5. The method according to claim 2 , wherein the chloride concentration in the organic phase is reduced to below 50 ppm.6. The method according to claim 3 , wherein the displaced chloride-containing aqueous liquor is recovered and recycled to the high-chloride heap leach operation thereby to decrease a quantity of make-up salt which is added to the high-chloride heap leach operation.7. The method according to claim 3 , wherein rinsing by the process make-up water is carried out for a period of from 5 to 100 days.8. The method ...

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30-11-2017 дата публикации

P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM

Номер: US20170345901A1
Принадлежит: RICOH COMPANY, LTD.

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCuO where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and x and y satisfy the following expressions: 0≦x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba. 1. (canceled)2. A composition comprising:a solvent;a Cu-containing compound; anda compound containing at least one selected from the group consisting of Mg, Ca, Sr and Ba,where a proportion by mole of the at least one selected from the group consisting of Mg, Ca, Sr and Ba in the composition is denoted as x, and a proportion by mole of Cu in the composition is denoted as 2y, [{'br': None, 'i': 'x<', '0≦100; and\u2003\u2003(i)'}, {'br': None, 'i': 'x+y=', '100,\u2003\u2003(ii)'}], 'wherein in a case that the composition contains at least one selected from the group consisting of Mg, Ca and Ba, x and y satisfy each of the following expressions (i) and (ii) [{'br': None, 'i': x<', 'x<, 'either 0≦50 or 50<100; and\u2003\u2003(iii)'}, {'br': None, 'i': 'x+y=', '100.\u2003\u2003(iv)'}], 'in a case that the composition does not contain any one selected from the group consisting of Mg, Ca and Ba, x and y satisfy each of the following expressions (iii) and (iv)3. A method for producing a p-type oxide comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'applying a composition according to onto a support; and'}heat treating the composition after the applying.46-. (canceled)7. A display device comprising:a light control device configured to control output of light based on a driving signal; anda driving circuit containing a semiconductor device and configured to drive the light control device,wherein the semiconductor device comprises:an active layer,wherein the active layer comprises a p-type oxide, and {'br': None, 'i': x', 'y, 'sub': '2', 'AO.CuO'}, 'wherein the p-type oxide contained ...

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29-11-2018 дата публикации

HIGH-THROUGHPUT SYNTHESIS OF METALLIC NANOPARTICLES

Номер: US20180339914A1
Принадлежит: TUSKEGEE UNIVERSITY

This invention relates to cost-effective methods for synthesizing metallic nanoparticles in high yield using non-dendrimeric branched polymeric templates, such as branched polyethyleneimine. This invention also provides a high-throughput apparatus for synthesizing metallic nanoparticles under conditions that produce less waste than conventional nanoparticle synthesis methods. Also provided are metallic nanoparticles and multi-metallic nanoparticle compositions made by methods and high-throughput apparatus of the invention. 1. A method of synthesizing metallic nanoparticles , the method comprisingproviding a first flow stream comprising an aqueous salt solution comprising ions of a transition metal and a branched polymeric template, wherein the branched polymeric template is not a dendrimer;subjecting the first flow stream to a reducing agent to reduce the ions of the transition metal to form metallic nanoparticles within the branched polymeric template; andoptionally separating the metallic nanoparticles from the branched polymeric template.2. The method according to claim 1 , wherein the branched polymeric template comprises a branched polymer selected from the group consisting of polyalkyleneimine claim 1 , polyester claim 1 , polyether claim 1 , thioester claim 1 , and polysulfide polymers.3. The method according to claim 2 , wherein the branched polymeric template is a polyalkyleneimine.4. The method of claim 3 , wherein the branched polyalkyleneimine is polyethyleneimine.5. The method according to claim 1 , wherein the aqueous salt solution is prepared by dissolving at least one transition metal halide claim 1 , nitrate claim 1 , sulfate claim 1 , or phosphate in water.6. The method according to claim 1 , wherein the nanoparticles comprise one or more metals selected from the group consisting of iron claim 1 , cobalt claim 1 , rhodium claim 1 , iridium claim 1 , nickel claim 1 , palladium claim 1 , platinum; copper claim 1 , silver claim 1 , gold claim 1 , ...

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08-12-2016 дата публикации

PREPARATION OF SEMICONDUCTOR FILMS

Номер: US20160359060A1
Принадлежит: Merck Patent GmBH

This invention relates to a precursor material, which can be decomposed to form semiconductors and metal oxides, or more generally, materials for electronic components. The precursors comprise metal complexes of hydroxamato ligands. The invention further relates to a preparation process for thin inorganic films comprising various metals (e.g. Cu/In/Zn/Ga/Sn) and oxygen, selenium and/or sulfur. The thin films can be used in photovoltaic panels (solar cells), other semiconductor or electronic devices, and other applications using such films. The process uses molecular, metal containing precursor complexes with hydroxamato ligands. These can be combined in the process with chalcogenide sources or oxygen. Exemplarily, various metal oxides and copper-based chalcopyrites of the I-III-VItype are prepared with high purity at low temperatures. 2. Process for the production of a semiconductor or metal oxide , characterized in that it comprises 'at least one of these metal complexes comprises one or more hydroxamato ligands, and', 'a. at least one or more metal complexes are provided as precursors,'}b. the combined precursors are decomposed by heating and/or radiation with formation of the semiconductor or metal oxide.3. Process according to claim 2 , characterized in that in step a. additionally a chalcogen or oxygen source is provided for combination with the one or more precursors.4. Process according to claim 2 , characterized in that the semiconductor is of the I-III-VI-type claim 2 , of the I-VI-type claim 2 , of the II-VI-type claim 2 , of the III-VI-type claim 2 , of the IV-VI-type claim 2 , or of the I-II-IV-VItype.5. Process according to claim 2 , characterized in that the semiconductor or metal oxide is formed as a film or layer on a substrate.6. Process according to claim 2 , characterized in that the precursors comprise one or more metals selected from aluminium claim 2 , gallium claim 2 , zinc claim 2 , cadmium claim 2 , copper claim 2 , germanium claim 2 , ...

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29-10-2020 дата публикации

MECHANO-CHEMICAL DE-MIXING OF METAL ALLOYS AND MIXED MATERIALS

Номер: US20200338642A1
Принадлежит:

A physical and chemical method is provided for de-mixing (e.g. extracting, separating, purifying and/or enriching) the metal constituents of an alloy or mixed material into different droplet or solid particle products that are highly enriched in the respective phases of the metal. The method involves for instance but is not limited to, shearing, separating and segregating metallic droplets and particles in a carrier fluid to form other droplets or particles that are each separately highly enriched in one of some, if not of all, of the constituent phases of the alloy or mixed material. 1. A method for de-mixing constituents of a mixed material , comprisingapplying at least one of mechanical stress, thermal stress, and chemical stress to particulates of the mixed material in a fluid, wherein the mixed material comprises a first metal and a second material, wherein the mechanical stress, thermal stress, or chemical stress is applied under conditions to achieve de-mixing of at least one of the constituents of the mixed material to form a first particle product that is enriched in the first metal relative to the mixed material and to form a second product dissolved in the fluid, wherein the second product is enriched in the second material relative to the mixed material.2. The method of claim 1 , wherein the mixed material comprises a metal alloy comprising a liquid alloy and/or a solid alloy.3. The method of claim 1 , wherein the mixed material comprises a first metal layer and an adjacent second metal layer.4. The method of claim 1 , wherein the mixed material comprises NdFeBDy.5. The method of claim 1 , wherein a polymer matrix comprises the mixed material.6. The method of claim 5 , wherein the polymer matrix comprises nylon.7. The method of claim 5 , wherein mixed material comprises NdFeBDy.8. The method of claim 5 , wherein the fluid swells the polymer matrix to separate the mixed material therefrom.9. The method of claim 1 , wherein a magnet comprising a nylon ...

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22-12-2016 дата публикации

POROUS MATERIALS VIA FREEZE-CASTING OF METAL SALT SOLUTIONS

Номер: US20160368047A1
Принадлежит:

Disclosed here is a method for making a nanoporous material, comprising aerosolizing a solution comprising at least one metal salt and at least one solvent to obtain an aerosol, freezing the aerosol to obtain a frozen aerosol, and drying the frozen aerosol to obtain a nanoporous metal compound material. Further, the nanoporous metal compound material can be reduced to obtain a nanoporous metal material. 1. A method for making a nanoporous material , comprising:aerosolizing a solution comprising at least one metal salt and at least one solvent to obtain an aerosol;freezing the aerosol to obtain a frozen aerosol; anddrying the frozen aerosol to obtain a nanoporous metal compound material.2. The method of claim 1 , further comprising converting the nanoporous metal compound material to a nanoporous metal material.3. The method of claim 2 , wherein the nanoporous metal material comprises at least about 40 wt. % of elemental metal.4. The method of claim 1 , further comprising assembling the nanoporous metal compound material into a macroscopic monolith.5. The method of claim 2 , further comprising assembling the nanoporous metal material into a macroscopic monolith.6. The method of claim 1 , wherein the solution comprising a silver salt and/or a copper salt.7. The method of claim 1 , wherein the solution comprising at least two metal salts.8. The method of claim 1 , wherein the solution comprising water as the solvent.9. The method of claim 1 , wherein the solution is aerosolized by a nebulizer claim 1 , a nozzle claim 1 , a syringe claim 1 , and/or a sprayer.10. The method of claim 1 , wherein the aerosol has an average or mean droplet diameter of 100 microns or less.11. The method of claim 1 , wherein the aerosol is frozen by contact with liquid nitrogen.12. The method of claim 1 , wherein the frozen aerosol is dried in a vacuum chamber.13. The method of claim 1 , wherein the frozen aerosol is dried at a temperature of about −90° C. to about 25° C.14. The method of ...

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13-12-2018 дата публикации

POROUS MATERIALS VIA FREEZE-CASTING OF METAL SALT SOLUTIONS

Номер: US20180354030A1
Принадлежит:

Disclosed here is a method for making a nanoporous material, comprising aerosolizing a solution comprising at least one metal salt and at least one solvent to obtain an aerosol, freezing the aerosol to obtain a frozen aerosol, and drying the frozen aerosol to obtain a nanoporous metal compound material. Further, the nanoporous metal compound material can be reduced to obtain a nanoporous metal material. 1. A composition comprising a nanoporous metal material that comprises nanoporous particles or foams having an average or mean diameter of about 100 microns or less , wherein the nanoporous metal material comprises at least about 40 wt. % of elemental metal.2. The composition of claim 1 , wherein nanoporous particles or foams comprise a network of interconnected ligaments and struts having an average or mean diameter of about 1000 nm or less.3. The composition of claim 1 , wherein the nanoporous metal material comprises at least about 80 wt. % of elemental metal.4. The composition of claim 1 , wherein the nanoporous metal material has a porosity of at least about 30%.5. The composition of claim 1 , wherein the nanoporous metal material has a porosity of at least about 50%.6. The composition of claim 1 , wherein the nanoporous metal material has a density of about 1000 mg/cc or less.7. The composition of claim 1 , wherein the nanoporous metal material has a density of about 100 mg/cc or less.8. The composition of claim 1 , wherein the elemental metal is silver.9. The composition of claim 1 , wherein the elemental metal is copper.10. The composition of claim 1 , wherein the nanoporous metal material comprises at least two elemental metals.11. The composition of claim 3 , wherein the elemental metal is silver.12. The composition of claim 3 , wherein the elemental metal is copper.13. The composition of claim 3 , wherein the nanoporous metal material comprises at least two elemental metals. This invention was made with government support under Contract No. DE-AC52- ...

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