Nanostructures, their use and process for their production

A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A 1-x -B x -chalcogenide. Processes for their manufacture are also described.

CATALYST PRECURSOR FOR HYDROCRACKING REACTION AND METHOD FOR HYDROCRACKING HEAVY OIL BY USING SAME

The present invention relates to a catalyst precursor for forming a molybdenum disulfide catalyst through a reaction with sulfur in heavy oil and to a method for hydrocracking heavy oil by using same. According to the present invention, the yield of a low-boiling liquid product with a high economic value in the products by heavy oil cracking can be increased, and the yield of a relatively uneconomical gas product or coke (toluene insoluble component), which is a byproduct, can be significantly lowered. 1. A catalyst precursor for a hydrocracking reaction represented by the following Chemical Formula 1 or Chemical Formula 2 , which reacts with sulfur in a heavy oil to produce a molybdenum disulfide catalyst:{'br': None, 'sub': 2', '2', '2, 'Mo(O)(O)L\u2003\u2003[Chemical Formula 1]'}{'br': None, 'sub': 4', '2, 'Mo(CO)L′\u2003\u2003[Chemical Formula 2]'}whereinL and L′ are a ligand having a coordination number of 1, containing phosphorus as a central element.3. The catalyst precursor for a hydrocracking reaction of claim 2 , wherein Rto Rof Chemical Formula 3 are independently of one another hydroxy claim 2 , C-Calkoxy claim 2 , C-Ccycloalkyloxy claim 2 , or C-Caryloxy.4. The catalyst precursor for a hydrocracking reaction of claim 2 , wherein Rto Rof Chemical Formula 3 are independently of one another C-Calkyl claim 2 , C-Ccycloalkyl claim 2 , C-Ccycloalkyl C-Calkyl claim 2 , or C-Calkyl C-Ccycloalkyl.5. The catalyst precursor for a hydrocracking reaction of claim 2 , wherein Rto Rof Chemical Formula 3 are independently of one another C-Caryl claim 2 , C-Caryl C-Calkyl claim 2 , or C-Calkyl C-Caryl.7. The catalyst precursor for a hydrocracking reaction of claim 6 , wherein Rto Rof Chemical Formula 4 are independently of one another C-Calkyl claim 6 , C-Ccycloalkyl claim 6 , C-Ccycloalkyl C-Calkyl claim 6 , or C-Calkyl C-Ccycloalkyl.8. The catalyst precursor for a hydrocracking reaction of claim 1 , wherein the molybdenum disulfide catalyst is a molybdenum disulfide ...

A Scalable Process for Producing Exfoliated Defect-Free, Non-Oxidised 2-Dimensional Materials in Large Quantities

A process for exfoliating untreated 3-dimensional material to produce a 2-dimensional material, said process comprising the steps of mixing the untreated 3-dimensional material in a liquid to provide a mixture; applying shear force to said mixture to exfoliate the 3-dimensional material and produce dispersed exfoliated 2-dimensional material in solution; and removing the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution. 1. A process for exfoliating an untreated 3-dimensional layered material to produce a 2-dimensional material , said process comprising the steps of:mixing the untreated 3-dimensional layered material in a liquid to provide a mixture;applying shear force to said mixture to exfoliate the 3-dimensional layered material and produce a dispersed and exfoliated 2-dimensional material in solution; andremoving the shear force applied to said mixture, such that the dispersed exfoliated 2-dimensional material remains free and unaggregated in solution.2. A process according to claim 1 , wherein flakes of 2-dimensional material and unexfoliated 3-dimensional layered material are removed from the solution by low-speed centrifugation claim 1 , gravity settling claim 1 , filtration or flow separation.3. A process according to where the shear force generates a shear rate greater than 1000 s-1.4. A process according to any one of claim 1 , wherein the 2-dimensional material is substantially non-oxidised.5. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture.6. A process according to claim 1 , further comprising the step of allowing the formation of a thin film layer from said mixture and wherein the step of forming the thin film layer is formed by vacuum filtration or accelerated evaporation.7. A process according to claim 1 , wherein the layered material is selected from any 3-dimensional layered compound ...

METAL CHALCOGENIDE DEVICE AND PRODUCTION METHOD THEREFOR

The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides. 1. A metal chalcogenide device comprising:a substrate;a metal chalcogenide layer with a first conductivity disposed on the substrate; anda first electrode and a second electrode spaced from each other on an upper surface or a side surface of the metal chalcogenide layer, the first electrode and the second electrode comprising metal chalcogenide.2. The metal chalcogenide device according to claim 1 , wherein the first conductivity is p-type.3. The metal chalcogenide device according to claim 1 , wherein at least one of the first electrode and the second electrode comprises Nb.4. The metal chalcogenide device according to claim 1 , wherein the metal chalcogenide layer comprises MoS.5. The metal chalcogenide device according to claim 1 , wherein at least one of the first electrode and the second electrode comprises NbS.6. The metal chalcogenide device according to claim 1 , wherein the metal chalcogenide layer contacts at least one of the first electrode and the second electrode in a side surface direction.7. The metal chalcogenide device according to claim 1 , wherein a diffusion area having a relatively high first conductivity is disposed between the metal chalcogenide layer and at least one of the first electrode and the second electrode.8. The metal chalcogenide device according to claim 1 , further comprising:a gate insulator disposed on the metal chalcogenide layer; anda gate electrode disposed on the gate insulator.9. A metal ...

PROCESS FOR THE CONTINUOUS PRODUCTION OF SUB-MICRON TWO-DIMENSIONAL MATERIALS SUCH AS GRAPHENE

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus. 1. A method of continuously separating a solid suspension containing submicron thickness laminar solid particles into a submicron thickness particle fraction suspension and a residual particle fraction suspension , the method comprising the steps of:providing a continuous centrifuge apparatus;providing a solid suspension of submicron thickness laminar solid particles; 'wherein the solid suspension comprises the submicron thickness laminar solid particles in a liquid continuous phase.', 'separating the solid suspension in the apparatus;'}2. The method of wherein the continuous centrifuge apparatus is a disc stack centrifuge.3. The method of claim 1 , wherein the submicron scale laminar solid particles comprise particles of a material having a crystalline structure comprising atomically thin layers claim 1 , which have been partially delaminated into atomically thin nano-platelets.4. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite claim 1 , hexagonal boron nitride claim 1 , molybdenum disulphide claim 1 , tungsten diselenide or other transition metal dichalcogenides.5. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially delaminated graphite or hexagonal boron nitride.6. The method of claim 1 , wherein the submicron laminar solid particles comprise particles of partially ...

SYSTEMS AND METHODS FOR THE PRODUCTION OF TUNABLE CONDUCTIVE MOLYBDENUM DISULFIDE THIN FILMS

Methods of manufacturing conductive molybdenum disulfide (MoS) are described herein. The methods include mixing a molybdenum disulfide powder in a liquid to form a molybdenum disulfide suspension, sonicating the molybdenum disulfide suspension for a first period of time at a first temperature, and retrieving the conductive molybdenum disulfide from the sonicated molybdenum disulfide suspension. Methods of manufacturing conductive forms of other transition metal dichalcogenides are also described. Materials produced by the methods described herein are also described. 1. A method of manufacturing conductive molybdenum disulfide (MoS2) , the method comprising:mixing a molybdenum disulfide powder in a liquid to form a molybdenum disulfide suspension;sonicating the molybdenum disulfide suspension for a first period of time, the molybdenum disulfide solution having a first temperature; andretrieving the conductive molybdenum disulfide from the sonicated molybdenum disulfide suspension.2. The method of claim 1 , wherein the molybdenum disulfide powder is in a bulk powder form.3. The method of claim 1 , wherein the molybdenum disulfide powder comprises 2H—MoS.4. The method of claim 1 , wherein the molybdenum disulfide powder comprises exfoliated 2H—MoS.5. The method of claim 1 , wherein the liquid is an aqueous solution.6. The method of claim 1 , wherein the liquid comprises hydrogen peroxide.7. The method of claim 6 , wherein the hydrogen peroxide has a concentration less than about 1.0% (v/v) in water.8. The method of claim 7 , wherein the hydrogen peroxide has a concentration of about 0.06% (v/v) in water.9. The method of claim 1 , wherein the liquid is water and the first temperature is equal to or greater than 40 degrees Celsius.10. The method of claim 1 , wherein the first temperature is equal to or greater than 60 degrees Celsius.11. The method of further comprising claim 1 , after sonicating the molybdenum disulfide solution for a first period of time at a first ...

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A method for detecting whether an unknown chemical vapor comprises a strong electron donor , comprising:providing at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;exposing the at least one sensor to an unknown chemical vapor;evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to determine whether the phase of the at least one region is 2H or 1T; anddetecting that the unknown chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The method of claim 1 , wherein the transition metal chalcogenide thin film is evaluated using Raman spectroscopy claim 1 , photoluminescence spectroscopy claim 1 , or electronic resistance measurement.3. The method of claim 1 , further comprising annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The method of claim 3 , wherein the annealing is carried out ...

Bulk direct gap mos2 by plasma induced layer decoupling

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe 2 ). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

METHOD FOR THE SYNTHESIS OF LAYERED LUMINESCENT TRANSITION METAL DICHALCOGENIDE QUANTUM DOTS

The invention discloses a method for the synthesis of monodispersed luminescent quantum dots of transition metal dichalcogenides (TMDC), single- or few-layered, using a single-step electrochemical exfoliation that involves dilute ionic liquid and water. The method disclosed helps to obtain nanoclusters of TMDC of desired size including small sizes ranging up to 6 nm, by varying the concentration of the electrolyte and the applied DC voltage. The invention further discloses a method by which mono- or few-layered luminescent transition metal dichalcogenides can be directly deposited onto conducting substrates in a uniform manner. The monodispersed single- or few-layered luminescent TMDC and electro-deposited substrates exhibit improved electronic conductivity and new active sites, making them suitable as high-performance electrocatalysts in hydrogen evolution reactions in solar water-splitting applications and also as electrodes for solar cell applications. 1. A method of synthesizing quantum dots , the method comprising:providing an electrochemical cell comprising an anode, a cathode, and an electrolytic solution, wherein the anode and the cathode are formed from a dichalcogenide material; andapplying an electric potential between the anode and the cathode for a suitable period to form quantum dots in the electrolytic solution.2. The method of claim 1 , wherein the dichalcogenide has a general formula MX claim 1 , wherein M is selected from a group consisting of one or more group VI metals claim 1 , and X is a chalcogen selected from a group consisting of S claim 1 , Se claim 1 , Te or Po.3. The method claim 2 , wherein M is selected from the group consisting of Mo or W.4. The method of claim 1 , wherein the electrolyte solution comprises 1-butyl-3-methylimidazoliumchloride ([BMIm]Cl) claim 1 , 1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) claim 1 , or lithium bis(trifluoromethylsulphonyl)imide (LiTFSI) claim 1 , lithium perchlorate (LiClO) claim 1 , sodium ...

MONATOMIC METAL-DOPED FEW-LAYER MOLYBDENUM DISULFIDE ELECTROCATALYTIC MATERIAL, PREPARING METHOD THEREOF, AND METHOD FOR ELECTROCATALYTIC NITROGEN FIXATION

The present invention provides a monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material, a preparing method thereof, and a method for electrocatalytic nitrogen fixation. The material has a few-layer ultra-thin and irregular flake-like microstructure with a length and a width of nanometer scale. A doping metal in the monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material is dispersed in a form of single atoms. When the catalyst is used in electrochemical reduction of N, a Faradic efficiency in selective reduction of Ninto NH is 18% or above, and stability of the catalyst is better. 1. A monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material , which has a few-layer ultra-thin and irregular flake-like microstructure with a length and a width of nanometer scale , and wherein the doping metal in the monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material is dispersed in a form of single atoms.2. The monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material according to claim 1 , wherein the monatomic metal in the monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material is for non-substitute doping claim 1 , and the few-layer ultra-thin and irregular flake has a length and width of 50-200 nm claim 1 , a thickness of 0.5-3 nm and 1-4 layers on average.3. The monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material according to claim 1 , wherein the monatomic metal comprises iron claim 1 , ruthenium claim 1 , platinum claim 1 , palladium claim 1 , and lanthanum claim 1 , and a doped amount is 0.2%-3%.4. A method for preparing the monatomic metal-doped few-layer molybdenum disulfide electrocatalytic material according to claim 1 , comprising the following steps:1) performing an ultrasonic process to flower-ball-shaped molybdenum disulfide to carry out an exfoliation, to obtain a few-layer molybdenum disulfide solution ...

METHOD FOR DEGRADING AN ORGANIC MATERIAL AND METHOD FOR STERILIZING

A method for manufacturing a molybdenum disulfide powder includes conducting a precursor solution preparation step and a hydrothermal synthesis step. The precursor solution preparation step includes providing sodium molybdenum oxide dihydrate and thiourea, and conducting a mixing step. In the mixing step, an acid solution is mixed with the sodium molybdenum oxide dihydrate and the thiourea by titrating so as to form a precursor solution. In the hydrothermal synthesis step, the precursor solution is put into a hydrothermal container for reacting at a temperature ranging from 100° C. to 350° C. for 8 hours to 40 hours, thus the molybdenum disulfide powder is formed. 1. A method for degrading an organic material , comprising:providing a molybdenum disulfide powder, wherein the molybdenum disulfide powder is stacked from a plurality of layered structures, and at least one of the layered structures is an odd-layer structure;conducting a contacting step, wherein the molybdenum disulfide powder is contacted with a medium, and the medium comprises at least one organic material and water; andconducting a degrading step, wherein a mechanical perturbation is generated in the medium to polarize the molybdenum disulfide powder, and a pair of electron and hole are generated for degrading the organic material.2. The method for degrading the organic material of claim 1 , wherein the medium is an aqueous solution.3. The method for degrading the organic material of claim 2 , wherein the organic material is rhodamine or methylene blue.4. The method for degrading the organic material of claim 2 , wherein the mechanical perturbation is generated by an ultrasonic wave.5. The method for degrading the organic material of claim 1 , wherein the medium is an air.6. The method for degrading the organic material of claim 5 , wherein the organic material is an organic gas.7. A method for sterilizing claim 5 , comprising:providing a molybdenum disulfide powder, wherein the molybdenum disulfide ...

Preparation of metal chalcogenides

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide. 1. A method for preparing a transition metal chalcogenide , comprising the step of exfoliating two or more different starting transition metal chalcogenides separately or together to produce exfoliated products and combining the exfoliated products to form a transition metal chalcogenide structure having layers of different composition.2. The method of wherein exfoliating is conducted by mechanical processing of the starting transition metal chalcogenides.3. The method of wherein the exfoliating is conducted by dry mechanical processing of the two or more different transition metal chalcogenides together.4. The method of wherein dry mechanical processing is carried out in an inert atmosphere or atmosphere that is non-reactive towards the two or transition metal chalcogenides and the produced transition metal chalcogenide structure.5. The method of wherein the exfoliating is conducted by mechanical processing in a liquid medium.6. The method of wherein the two or more different transition metal chalcogenides are exfoliated separately.7. The method of wherein the two or more different transition metal chalcogenides are exfoliated together.8. The method of wherein the exfoliated products self-combine to form a layered 3D heterostructure.9. The method of wherein the exfoliated products are mixed to combine to form a layered 3D heterostructure.10. The method of wherein the liquid medium comprises at least one of isopropanol claim 5 , water claim 5 , dimethylsulphoxide claim 5 , N-vinyl-pyrrolidinone claim 5 , N-methyl-pyrrolidinone claim 5 , benzonitrile or any solvent that does not react with exfoliated materials under the processing ...

METHOD FOR PRODUCING DISPERSIONS OF NANOSHEETS

The present invention provides a method for producing a solution of nanosheets, comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets, wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide, a transition metal monochalcogenide, a transition metal trichalcogenide, a transition metal oxide, a metal halide, an oxychalcogenide, an oxypnictide, an oxyhalide of a transition metal, a trioxide, a perovskite, a niobate, a ruthenate, a layered III-VI semiconductor, black phosphorous and a V-VI layered compound. The invention also provides a solution of nanosheets and a plated material formed from nanosheets. 1. A method for producing a solution of nanosheets , comprising the step of contacting an intercalated layered material with a polar aprotic solvent to produce a solution of nanosheets , wherein the intercalated layered material is prepared from a layered material selected from the group consisting of a transition metal dichalcogenide , a transition metal monochalcogenide , a transition metal trichalcogenide , a transition metal oxide , a metal halide , an oxychalcogenide , an oxypnictide , an oxyhalide of a transition metal , a trioxide , a perovskite , a niobate , a ruthenate , a layered III-VI semiconductor , black phosphorous and a V-VI layered compound.2. The method according to claim 1 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide claim 1 , a transition metal monochalcogenide claim 1 , a transition metal trichalcogenide claim 1 , a transition metal oxide claim 1 , a layered III-VI semiconductor claim 1 , black phosphorous and a V-VI layered compound.3. The method according to claim 2 , wherein the layered material is selected from the group consisting of a transition metal dichalcogenide claim 2 , a transition metal monochalcogenide ...

Molybdenum sulfide, method for producing same, and hydrogen generation catalyst

Provided is a molybdenum sulfide that is ribbon-shaped and particularly suitable for a hydrogen generation catalyst. Disclosed are a ribbon-shaped molybdenum sulfide, in which 50 particles as measured by observation with a scanning electron microscope (SEM) have a shape of, on average, 500 to 10000 nm in length, 10 to 1000 nm in width, and 3 to 200 nm in thickness; a method for producing the ribbon-shaped molybdenum sulfide, including: (1) heating a molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; or (2) heating a molybdenum oxide at a temperature of 100 to 800° C. in the absence of a sulfur source, and then heating the molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; and a hydrogen generation catalyst including the ribbon-shaped molybdenum sulfide.

MEMBRANE SURFACE ACTIVATION TO ELIMINATE FOULING AND CONCENTRATION POLARIZATION IN WATER PURIFICATION SYSTEMS

Disclosed herein is a membrane comprising a bonding layer; and an activation layer disposed on the bonding layer and in contact with it; where the activation layer comprises catalyst nanoparticles that are operative to decompose impurities contained in an aqueous solution to generate gas bubbles that remove a sludge disposed on the membrane. Disclosed herein too is a method of purifying an aqueous solution comprising disposing in the aqueous solution, a membrane that comprises a bonding layer and an activation layer; where the activation layer comprises catalyst nanoparticles; partitioning the aqueous solution into a concentrate portion and a filtrate portion; where the activation layer contacts the concentrate portion; and decomposing impurities contained in the aqueous solution to generate gas bubbles that remove a sludge disposed on the membrane. 1. A membrane comprising:a bonding layer; andan activation layer disposed on the bonding layer and in contact with it; where the activation layer comprises catalyst nanoparticles or enzymes that are operative to decompose impurities contained in an aqueous solution to generate gas bubbles and reactive oxygen species that remove or prevent the formation of a foulant layer disposed on the membrane.2. The membrane of claim 1 , where the membrane further comprises a first polymeric layer that contacts a surface of the bonding layer that is opposed to a surface that contacts the activation layer.3. The membrane of claim 2 , where the first polymeric layer comprises a polyamide and/or a polysulfone.4. The membrane of claim 1 , where the bonding layer comprises a polydopamine.5. The membrane of claim 1 , where the bonding layer comprises an amine functionalized polymer or an amine functionalized copolymer.7. The membrane of claim 6 , where the aromatic amine is 2-(3 claim 6 ,4-dihydroxyphenyl)ethylamine claim 6 , 3 claim 6 ,4-dihydroxy-L-phenylalanine claim 6 , L-phenylanaline claim 6 , or a combination thereof.8. The membrane ...

PROCESS AND DEVICE FOR LARGE-SCALE NONCOVALENT FUNCTIONALIZATION OF NANOMETER-SCALE 2D MATERIALS USING HEATED ROLLER LANGMUIR-SCHAEFER CONVERSION

The present invention generally relates to a device and a process for performing large-scale noncovalent functionalization of 2D materials, with chemical pattern elements as small as a few nanometers, using thermally controlled rotary Langmuir-Schaefer conversion. In particular, the present invention discloses a device comprising a thermally regulated disc driven by a rotor with fine speed control configured to be operable with a Langmuir trough for performing large-scale noncovalent functionalization of 2D materials, achieving ordered domain areas up to nearly 10,000 μm, with chemical pattern elements as small as a few nanometers. A process using the device for performing large-scale noncovalent functionalization of 2D materials with chemical pattern elements as small as a few nanometers is within the scope of this disclosure. The process we demonstrate would be readily extensible to roll-to-roll processing, addressing a longstanding challenge in scaling Langmuir-Schaefer transfer for practical applications. 1. An apparatus for performing noncovalent functionalization of a 2D material substrate using Langmuir-Schaefer (LS) conversion comprisinga. a motor configured to turn a roller equipped with a thermal regulation mechanism;b. a Langmuir trough for preparing a molecular monolayer or thin film comprising functional amphiphiles; andc. said roller comprising a disk mounted on a translator that brings the disk in contact with said functional monolayer or thin film, and to the periphery of said disk is mounted a 2D material substrate.2. The apparatus according to claim 1 , wherein said motor is a stepper motor fit for fine speed control of said roller's rotation while the disk is in contact with the functional monolayer or thin film during transferring process.3. The apparatus according to claim 1 , wherein said 2D material substrate comprises graphene claim 1 , highly oriented pyrolytic graphite (HOPG) claim 1 , or a layered material of MoSor WS.4. The apparatus ...

OPPORTUNITIES FOR RECOVERY AUGMENTATION PROCESS AS APPLIED TO MOLYBDENUM PRODUCTION

A copper/molybdenum separation processor is provide featuring a slurry/media mixture stage configured to receive a conditioned pulp containing hydrophobic molybdenite and hydrophilic copper, iron and other minerals that is conditioned with sodium hydrosulfide together with an engineered polymeric hydrophobic media, and provide a slurry/media mixture; and a slurry/media separation stage configured to receive the slurry/media mixture, and provide a slurry product having a copper concentrate and a polymerized hydrophobic media product having a molybdenum concentrate that are separately directed for further processing. The slurry/media mixture stage include a molybdenum loading stage configured to contact the conditioned pulp with the engineered polymeric hydrophobic media in an agitated reaction chamber, and load the hydrophobic molybdenite on the engineered polymeric hydrophobic media. 139-. (canceled)40. A method for separating copper and molybdenum comprising:receiving in a slurry/media mixture stage a conditioned pulp containing hydrophobic molybdenite and hydrophilic copper, iron and other minerals that is conditioned with sodium hydrosulfide together with an engineered polymeric hydrophobic media, and providing a slurry/media mixture;receiving in a slurry/media separation stage the slurry/media mixture, and providing a slurry product having a copper concentrate and a polymerized hydrophobic media product having a molybdenum concentrate that are separately directed for further processing; anddirecting with a media recovery stage forming part of the slurry/media separation stage the slurry product having the copper concentrate to a copper concentrate filtration stage and the polymerized hydrophobic media product to a media wash stage, the copper concentrate filtration stage having filters configured to provide the copper concentrate, and wherein the copper concentrate comprises the hydrophilic copper, and the polymerized hydrophobic media product comprises the ...

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors. 1. A system for detecting whether a chemical vapor comprises a strong electron donor , comprising:at least one sensor comprising a transition metal chalcogenide thin film comprising at least one region having a 2H phase;an apparatus for evaluating the transition metal chalcogenide thin film comprising at least one region having a 2H phase to assess whether the phase of the at least one region is 2H or 1T; anda transmitter that generates a signal indicating that the chemical vapor comprises a strong electron donor if the phase of the at least one region of the transition metal chalcogenide thin film has changed from 2H to 1T.2. The system of claim 1 , wherein the apparatus for evaluating the transition metal chalcogenide thin film is a Raman spectrometer claim 1 , photoluminescence spectrometer claim 1 , or electronic resistance sensor.3. The system of claim 1 , further comprising a heating element for annealing the at least one region of the transition metal chalcogenide thin film after the phase has changed from 2H to 1T claim 1 , thereby returning the at least one region of the transition metal chalcogenide thin film to the 2H phase.4. The system of claim 3 , wherein the heating element is provided ...

CONTINUOUS PRODUCTION OF EXFOLIATED 2D LAYERED MATERIALS BY COMPRESSIVE FLOW

Described herein are methods for continuous production of an exfoliated two-dimensional (2D) material comprising passing a 2D material mixture through a convergent-divergent nozzle, the 2D material mixture comprising a 2D layered material and a compressible fluid. The method of the present disclosure employs physical compression and expansion of a flow of high-pressure gases, leaving the 2D layered material largely defect free to produce an exfoliated 2D layered in a simple, continuous, and environmentally friendly manner. 1. A method for continuous production of an exfoliated two-dimensional (2D) material comprisingproviding a 2D layered material;providing a compressible fluid;mixing the 2D layered material with the compressible fluid thereby forming a 2D material mixture; andpassing the 2D material mixture through a convergent-divergent nozzle to exfoliate the 2D layered material before the compressible fluid intercalates the 2D layered material.2. The method of wherein the 2D layered material comprises graphite claim 1 , graphene claim 1 , boron nitride (BN) claim 1 , single-layer BN claim 1 , molybdenum disulfide (MoS) claim 1 , single-layer MoS claim 1 , or any combination thereof.3. The method of wherein the compressible fluid comprises air claim 1 , nitrogen claim 1 , carbon dioxide claim 1 , helium claim 1 , or any combination thereof.4. The method of wherein a concentration of the 2D layered material in the 2D material mixture is about 0.01 milligrams per milliliter (mg/mL) to about 0.4 mg/mL.5. The method of wherein the convergent-divergent nozzle comprises a de Laval nozzle claim 1 , a valve claim 1 , an orifice claim 1 , a thin tube claim 1 , or any combination thereof.6. The method of wherein a valve comprises a needle valve claim 5 , a butterfly valve claim 5 , a globe valve claim 5 , a pinch valve claim 5 , an adjustable flow valve claim 5 , a one-way flow valve claim 5 , or any combination thereof.7. The method of claim 1 , wherein passing the 2D ...

LAYERED SUBSTANCE-CONTAINING LIQUID AND METHOD FOR PRODUCING SAME

A laminate of layered substances each containing two or more kinds of elements as constituent elements is contained in an ionic liquid containing a specific cation, and the ionic liquid containing the laminate is irradiated with one or both of sonic waves and electric waves. 3. The method for producing the layered substance-containing liquid according to claim 2 , wherein ultrasonic waves are used as the sonic waves claim 2 , and microwaves are used as the electric waves.4. The method for producing the layered substance-containing liquid according to claim 2 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation.5. The method for producing the layered substance-containing liquid according to claim 4 , wherein a liquid phase is collected from the ionic liquid having been subjected to the centrifugal separation.6. The method for producing the layered substance-containing liquid according to claim 3 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation. The present invention relates to a layered substance-containing liquid containing an ionic liquid together with a layered substance, and a method for producing the same.A substance having a layered structure (layered substance) exhibits characteristic physical properties resulting from the layered structure, and many researchers have been conducting research on various layered substances.In particular, recently, there has been proposed to use a layered substance called “nanosheet” for improvement of performance of electronic devices (for example, refer to Non-Patent Literature 1). A laminate of a plurality of (two to five) layers of layered substances, as well as a single-layer (one layer) layered substance, is used as the nanosheet.Accordingly, attention has been focused on layered substances having various kinds of compositions, ...

METHOD FOR MANUFACTURING TWO-DIMENSIONAL TRANSITION METAL DICHALCOGEMIDE THIN FILM

The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below. 1. A method for preparing a two-dimensional transition metal dichalcogenide , comprising:pre-treating a substrate in a deposition chamber; andintroducing a chalcogen-containing precursor and a transition-metal-containing precursor into the deposition chamber to deposit a two-dimensional transition metal dichalcogenide on the substrate.2. The method as claimed in claim 1 , wherein the transition-metal-containing precursor comprises a transition metal selected from the group consisting of Ti claim 1 , V claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Nb claim 1 , Ta claim 1 , Mo claim 1 , W claim 1 , Tc claim 1 , Re claim 1 , Ru claim 1 , Os claim 1 , Rh claim 1 , Jr claim 1 , Pt claim 1 , Ag claim 1 , Au claim 1 , Cd claim 1 , In claim 1 , Tl claim 1 , Sn claim 1 , Pb claim 1 , Sb claim 1 , Bi claim 1 , Zr claim 1 , Te claim 1 , Pd claim 1 , Hf claim 1 , and a combination thereof.3. The method as claimed in claim 1 , wherein a partial pressure ratio of the chalcogen-containing precursor to the transition-metal-containing precursor is 1:2 or greater.4. The method as claimed in claim 1 , wherein the chalcogen-containing precursor comprises an S-containing organic compound or an S-containing inorganic compound.5. The method as claimed in claim 1 , wherein the deposition is performed at a low temperature of 600° C. or below.6. The method as claimed in claim 1 , wherein the deposition is performed according to a chemical vapor deposition method.7. The method as claimed in claim 6 , wherein the ...

METHOD FOR THE PREPARATION OF LOW-DIMENSIONAL MATERIALS

The present invention provides a method for the preparation of low-dimensional materials, comprising mixing a pristine material to be abraded with an organic solvent to form a mixture, abrading the material to be abraded by bead-milling, obtaining a suspension comprising the material of low dimension and the organic solvent, and removing the organic solvent from the suspension to obtain the low-dimensional material. 1. A method for the preparation of low-dimensional materials , comprising:(i) mixing a pristine material to be abraded with an organic solvent to form a mixture;(ii) abrading the material to be abraded in the mixture by bead-milling,(iii) obtaining a suspension comprising the material of low dimension and the organic solvent; and(iv) removing the organic solvent from the suspension to obtain the low-dimensional material.2. The method according to claim 1 , wherein in step (ii) claim 1 , the bead-milling is carried out by feeding the mixture into a wet-milling machine with abrading beads for abrasion claim 1 , and the amount of the abrading beads in the inner space of the wet-milling machine is about 30% to 80%.3. The method of claim 1 , wherein the abrading beads are ceramic beads.4. The method of claim 2 , wherein the ratio of the abrading beads and the solvent in step (ii) is 5:1 to 1:1.5. The method of claim 4 , wherein the ratio of the abrading beads and the solvent in step (ii) is 4:1 to 3:1.6. The method of claim 2 , wherein the size of the abrading beads is from 20 μm to 1 mm.7. The method of claim 6 , wherein the size of the abrading beads is from 20 μm to 200 μm.8. The method of claim 7 , wherein the size of the abrading beads is from 50 μm to 100 μm.9. The method according to wherein the rate of the rotating blades of the wet-milling machine is from 10 to 6000 rpm claim 1 , preferably 1000 to 3000 rpm claim 1 , and more preferably 1500 to 2000 rpm.10. The method according to wherein the time for abrasion is from 30 minutes to 840 minutes.11. ...

Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use

Methods of forming two-dimensional transition metal dichalcogenide sheets are provided. The methods include adding a cross-linking agent to an activating agent to form a solution and mixing a two-dimensional transition metal dichalcogenide with the solution to form a mixture. The methods also include adding a cleaving agent to the mixture to form one or more contiguous sheets of transition metal dichalcogenide.

Transition metal dichalcogenide aerogels and methods of preparation and use

Methods of forming transition metal dichalcogenide aerogels are provided. Some methods include adding at least one solvent to one or more two-dimensional transition metal dichalcogenide sheets to form a transition metal dichalcogenide solution and freeze drying the transition metal dichalcogenide solution to form frozen transition metal dichalcogenide. The methods also include heating the frozen transition metal dichalcogenide to form a transition metal dichalcogenide aerogel.

TWO-DIMENSIONAL MATERIALS, METHODS OF FORMING THE SAME, AND DEVICES INCLUDING TWO-DIMENSIONAL MATERIALS

According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps. 1. A two-dimensional (2D) material element comprising:a first 2D material including a first metal chalcogenide-based material; anda second 2D material bonded to a side of the first 2D material, the second 2D material including a second metal chalcogenide-based material, the first 2D material and the second 2D material being chemically bonded to each other.2. The 2D material element of claim 1 , wherein the first 2D material and the second 2D material are covalently bonded to each other.3. The 2D material element of claim 1 , whereinthe first 2D material and the second 2D material are interatomically bonded to each other, andthe first 2D material and the second 2D material have a continuous crystal structure at a bonding portion between the first 2D material and the second 2D material.4. The 2D material element of claim 1 , whereinthe first metal chalcogenide-based material is a first transition metal dichalcogenide (TMDC) material,the second metal chalcogenide-based material is a second transition metal dichalcogenide (TMDC) material, andthe first and second metal dichalcogenide (TMDC) materials are different from each other.5. The 2D material element of claim 1 , wherein at least one of the first metal chalcogenide-based material and the second metal chalcogenide-based material include:a metal atom including one of Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, and Pb, anda chalcogen atom including one of S, Se, and Te.6. ...

SOLVENTHERMAL SYNTHESIS OF NANOSIZED TWO DIMENSIONAL MATERIALS

A process of forming two dimensional nano-materials that includes the steps of: providing a bulk two dimensional material; providing lithium iodide; suspending the lithium iodide and bulk two dimensional material in a solvent forming a solution; initiating a solvent thermal reaction forming a lithiated bulk two dimensional material. The resulting lithiated bulk two dimensional material may be exfoliated after the solvent thermal reaction forming a two dimensional layered material. 1. A process of forming two dimensional nano-materials comprising the steps of:providing a bulk two dimensional material of molybdenum disulfide;providing lithium iodide;suspending the lithium iodide and bulk two dimensional material in a solvent forming a solution;initiating a solvent thermal reaction forming a lithiated bulk two dimensional material.2. The process of including the step exposing the solution to a source of microwave energy initiating the solvent thermal reaction.3. (canceled)4. The process of wherein the solvent is anhydrous hexane.5. The process of wherein the exposing step is from 5 to 20 minutes.6. The process of wherein the solvent thermal reaction includes elevating the solution to a temperature of from 150 to 250 degrees C.7. The process of including the step of cooling and filtering the lithiated bulk two dimensional material following the solvent thermal reaction.8. The process of further including the step of exfoliating the lithiated bulk two dimensional material after the solvent thermal reaction forming a two dimensional layered material.9. The process of wherein the step of exfoliating the lithiated bulk two dimensional material includes immersing the lithiated bulk two dimensional material in hot water wherein lithium reacts with the water forming lithium hydroxide and hydrogen gas.10. The process of further including the step of centrifuging the exfoliated lithiated bulk two dimensional material.11. A process of forming two dimensional nano-materials ...

METHOD FOR SYNTHESIS OF TRANSITION METAL CHALCOGENIDE

Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness. 1. A method for synthesizing a transition metal chalcogenide , the method comprising:supplying a precursor of the transition metal chalcogenide and a reactant on a substrate by atomic layer deposition to synthesize the transition metal chalcogenide having a predetermined synthesis thickness on the substrate, whereinthe transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, andthe transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness.2. The method according to claim 1 , wherein the substrate includes an amorphous substrate.3. The method according to claim 2 , wherein the substrate includes a SiOsubstrate or a SiNsubstrate.4. The method according to claim 1 , wherein the precursor includes one or more kinds of transition metals selected from the group consisting of Ti claim 1 , Hf claim 1 , Zr claim 1 , V claim 1 , Nb claim 1 , Ta claim 1 , Mo claim 1 , W claim 1 , Tc claim 1 , Re claim 1 , Co claim 1 , Rh claim 1 , Ir claim 1 , Ni claim 1 , Pd claim 1 , Pt claim 1 , Zn claim 1 , and Sn.5. The method according to claim 4 , wherein the precursor includes at least one selected from TiCl claim 4 , TiF claim 4 , TiI claim 4 , HfCl claim 4 , HfCpMe claim 4 , HfI claim 4 , Hf(CpMe)(OMe)Me claim 4 , ZrCl claim 4 , ZrI claim 4 , VCl claim 4 , VoCl claim 4 , NbCl claim 4 , TaCl claim 4 , TaF claim 4 ...

CONTINUOUS PRODUCTION OF EXFOLIATED 2D LAYERED MATERIALS BY COMPRESSIVE FLOW

Described herein are methods for continuous production of an exfoliated two-dimensional (2D) material comprising passing a 2D material mixture through a convergent-divergent nozzle, the 2D material mixture comprising a 2D layered material and a compressible fluid. The method of the present disclosure employs physical compression and expansion of a flow of high-pressure gases, leaving the 2D layered material largely defect free to produce an exfoliated 2D layered in a simple, continuous, and environmentally friendly manner. 1. A method for continuous production of an exfoliated two-dimensional (2D) material comprising passing a 2D material in a compressible fluid through a convergent-divergent nozzle to exfoliate the 2D material before the 2D material intercalates.2. The method of wherein the 2D material comprises boron nitride (BN).3. The method of wherein the 2D material comprises graphite claim 1 , graphene claim 1 , single-layer BN claim 1 , molybdenum disulfide (MoS2) claim 1 , single-layer MoS2 claim 1 , or any combination thereof.4. The method of wherein the compressible fluid comprises air claim 1 , nitrogen claim 1 , carbon dioxide claim 1 , helium claim 1 , or any combination thereof.5. The method of wherein a concentration of the 2D material in the compressible fluid is about 0.01 milligram per milliliter (mg/mL) to about 0.4 mg/mL.6. The method of wherein the convergent-divergent nozzle comprises a de Laval nozzle claim 1 , a valve claim 1 , an orifice claim 1 , a thin tube claim 1 , or any combination thereof.7. The method of wherein the valve comprises a needle valve claim 5 , a butterfly valve claim 5 , a globe valve claim 5 , a pinch valve claim 5 , an adjustable flow valve claim 5 , a one-way flow valve claim 5 , or any combination thereof.8. The method of claim 1 , wherein the 2D material in the compressible fluid is passed through the converging diverging nozzle at a pressure of about 200 pounds per square inch (psi) to about 4000 psi.9. The method ...

SYNTHESIS AND USE OF PRECURSORS FOR ALD OF MOLYBDENUM OR TUNGSTEN CONTAINING THIN FILMS

Processes for forming Mo and W containing thin films, such as MoS, WS, MoSe, and WSethin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W. 1. A process for forming a Mo or W containing thin film on a substrate in a reaction chamber comprising at least one cycle , the cycle comprising:contacting the substrate with a vapor phase Mo or W precursor such that at most a molecular monolayer of the first Mo or W precursor is formed on the substrate surface, wherein the Mo or W in the Mo or W precursor has an oxidation state less than or equal to +IV, but not 0;removing excess Mo or W precursor and reaction byproducts, if any;contacting the substrate with a vapor phase chalcogen precursor, wherein the chalcogen precursor reacts with the Mo or W precursor on the substrate surface;removing excess chalcogen precursor and reaction byproducts, if any; andoptionally repeating the contacting and removing steps until a Mo or W containing thin film of the desired thickness is formed.2. The process of claim 1 , wherein the process is an atomic layer deposition (ALD) process.3. The process of claim 1 , wherein the process comprises two or more sequential cycles.4. The process of claim 1 , wherein the Mo or W containing thin film is a Mo or W sulfide claim 1 , selenide claim 1 , or telluride thin film.5. The process of claim 1 , wherein the oxidation state of the Mo or W in the Mo or W precursor is +III.6. The process of claim 1 , wherein the chalcogen precursor comprises HS claim 1 , HSe claim 1 , HTe claim 1 , (CH)S claim 1 , (CH)Se claim 1 , or (CH)Te.7. An atomic layer deposition (ALD) process for forming a Mo or W sulfide claim 1 , selenide. or telluride thin film on a substrate in a reaction chamber comprising at least one cycle claim 1 , the cycle comprising:contacting the substrate with a vapor phase Mo or W precursor such that at most a molecular ...

CORE-SHELL STRUCTURE TYPE WAVE ABSORBING MATERIAL, PREPARATION METHOD THEREFOR, AND APPLICATION

Disclosed are a core-shell structure type wave absorbing material and a preparation method therefor. The wave absorbing material has a core-shell structure with two-dimensional transition metal-chalcogen compound nanosheets as cores and hollow carbon spheres as shells. The preparation method includes: dissolving the hollow carbon spheres in a solvent, sequentially adding a transition metal source and a chalcogen source, taking a solvothermal reaction after dissolution through stirring, and then performing posttreatment to obtain the wave absorbing material. The present invention further discloses an application of the wave absorbing material in fields of military and civilian high-frequency electromagnetic compatibility and protection. The core-shell structure type wave absorbing material of the present invention has a density of 0.3 to 1.5 g/cm, a maximum reflection loss value and an effective bandwidth of the material can be effectively improved in a frequency range of 2 to 40 GHz, and the core-shell structure type wave absorbing material is an electromagnetic compatibility and protection material capable of meeting requirements of civilian high-frequency electronic devices and military weapons and equipment such as airships and artillery shells. 1. A core-shell structure type wave absorbing material , having a core-shell structure with two-dimensional transition metal-chalcogen compound nanosheets as cores and hollow carbon spheres as shells , whereinthe transition metal is selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zr, Nb, Mo, Hf, Ta, W and Re, and the chalcogen is selected from S, Se and Te.2. The core-shell structure type wave absorbing material according to claim 1 , wherein a matching thickness of the wave absorbing material in a frequency band of 2 to 40 GHz is 0.5 to 5.0 mm claim 1 , a maximum reflection loss (RL) is −40 to 80 dB claim 1 , and an effective absorption bandwidth with a RL smaller than −10 dB is 2.5 to 12 GHz.3. A preparation method for the ...

Systems and methods for disassembling two-dimensional van der waals crystals into macroscopic monolayers and reassembling into artificial lattices

Systems and methods for generating one or more single crystal monolayers from two-dimensional van der Waals crystals are disclosed herein. Example methods include providing a bulk material including a plurality of van der Waals crystal layers, and exfoliating one or more single crystal monolayers of van der Waals crystal from the bulk material by applying a flexible and flat metal tape to a surface of the bulk material. In certain embodiments, the one or more single crystal monolayers can be assembled into an artificial lattice. The present disclosure also provides techniques for manufacturing flexible and flat metal tape for generating one or more single crystal monolayers from two-dimensional van der Waals crystals. The present disclosure also provides compositions for creating a macroscopic artificial lattice. In certain embodiments, the composition can include two or more macroscopic single crystal monolayers adapted from a bulk van der Waals crystal, where the single crystal monolayers are configured for assembly into an artificial lattice based on one or more properties.

MASK FREE METHODS OF DEPOSITING COMPOSITIONS TO FORM HETEROSTRUCTURES

The present disclosure provides methods of preparing heterostructures of two or more transition metal dichalcogenides on a surface in a pattern in which the method does not require a mask or blocking agent to create a pattern on the surface. Also provided herein are ink compositions which are used in the methods described herein and include precursor materials that generate these transition metal dichalcogenides. 1. An ink composition comprising:{'sub': 2', '2, 'claim-text': X is a monovalent cation;', 'M is a transition metal; and', 'L is a divalent chalcogen ligand; and, '(A) a metal salt of the formula: XML, wherein(B) deionized water;wherein the ink composition is substantially free of particles greater than 0.2 μm; or an ink composition of the formula:{'sub': a', 'b, 'claim-text': Y is a monovalent cation;', 'Z is a transition metal oxide of Group 6; and', 'a and b are each independently integers sufficient to balance the charge of the transition metal ion of Group 6; and, '(A) a metal salt of the formula: YZ, wherein(B) deionized water;wherein the ink composition is substantially free of particles greater than 0.2 μm and the composition is formulated for use in deposition process.2. The ink composition of claim 1 , wherein the metal salt is homogenously dispersed in the deionized water.3. The ink composition of claim 1 , wherein X is a quaternary ammonium.46.-. (canceled)7. The ink composition of claim 1 , wherein M is tungsten(VI) or molybdenum(VI).8. The ink composition of claim 1 , wherein L is sulfide or selenide.9. (canceled)10. The ink composition of claim 1 , wherein the metal salt is (NH)MoSor (NH)WS.1116.-. (canceled)17. The ink composition of claim 1 , wherein M is a transition metal oxide of Group 6 is of the formula:{'br': None, 'sub': 1', 'x', '1', 'y, 'sup': 'z+', '(M)(L)'} [{'sub': '1', 'Mis a transition metal of Group 6;'}, {'sub': '1', 'Lis an oxide ligand;'}, 'x is 2, 3, 4, 5, 6, 7, 8, 9, or 10;', 'y is 3-24; and', 'z is the resultant charge ...

Electronic beam machining system

The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.

Two-Dimensional Nanomaterial Dispersant, Preparation Method of Two-Dimensional Nanomaterial by Liquid Phase Exfoliation, and Use Thereof

The present invention discloses a two-dimensional nanomaterial dispersant, a preparation method of a two-dimensional nanomaterial by liquid phase exfoliation, and use thereof. The present invention utilizes a readily synthesizable and inexpensive oligoaniline, oligoaniline derivative, polyaniline conducting polymer or the like as a dispersant of a two-dimensional nanomaterial, such as a boron nitride nanosheet or a molybdenum disulfide nanosheet, simply mixes the dispersant with boron nitride or molybdenum disulfide in a dispersion medium, such as water, an organic solvent, or a polymer resin, and can significantly improve dispersity and dispersion stability of the two-dimensional nanomaterial in the dispersion medium by a physical interaction therebetween; and can also obtain the two-dimensional nanomaterial in the dispersant by a simple liquid phase exfoliation method, which is an environment friendly and efficient process with simple operations without impairing the physical structure and chemical properties of the two-dimensional nanomaterial, and facilitates large-scale implementation. 2. The two-dimensional nanomaterial dispersant according to claim 1 , wherein the oligoaniline comprises any one or a combination of two or more of an aniline trimer claim 1 , an aniline tetramer claim 1 , an aniline pentamer claim 1 , or an aniline hexamer claim 1 , the oligoaniline derivative comprises a derivative of any one of an aniline trimer claim 1 , an aniline tetramer claim 1 , an aniline pentamer claim 1 , or an aniline hexamer.34-. (canceled)6. The two-dimensional nanomaterial dispersant according to claim 1 , wherein a weight ratio of the dispersant to the two-dimensional nanomaterial is 0.1-10:1; and preferably claim 1 , the weight ratio of the dispersant to the two-dimensional nanomaterial is 0.2-2:1.7. The two-dimensional nanomaterial dispersant according to claim 1 , wherein the two-dimensional boron nitride nanomaterial or the two-dimensional molybdenum ...

METAL CHALCOGENIDE THIN FILM AND PREPARING METHOD THEREOF

Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film. 1. A method for preparing a metal chalcogenide thin film , the method comprising:forming a metal layer on a substrate; andforming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.2. The method according to claim 1 ,further comprising removing an oxide film by injecting hydrogen at a plasma state into the chamber after inserting of the substrate into the chamber but before the forming of a thin film so as to remove the oxide film formed on a surface of the substrate.3. The method according to claim 2 ,further comprising removing foreign substance from air inside the chamber by further injecting argon gas for a certain period of time before the removing of the oxide film.4. The method according to claim 1 ,wherein the metal chalcogenide thin film has a plate structure including at least one layer.5. The method according to claim 4 ,wherein each layer forming the metal chalcogenide thin film may be detached individually.6. The method according to claim 5 ,wherein a thickness of each layer may be adjusted by adjusting a flow rate of the gas containing chalcogen atoms being injected into the chamber, by controlling a ...

METHOD FOR PRODUCING SHEETS OF GRAPHENE

The invention relates to a method for obtaining sheets of graphene, hexagonal boron nitride, molybdenum disulfide, tungsten disulfide or mixtures thereof from the powder of said materials. Said sheets consist of a set of strips, wherein said strips consist of between one and five layers. Said layers are layers of graphene, hexagonal boron nitride, molybdenum disulfide or tungsten disulfide having a monoatomic or monomolecular thickness. The invention also relates to a method for coating a surface with sheets of graphene, hexagonal boron nitride, molybdenum disulfide, tungsten disulfide or sheets of mixtures thereof. 115-. (canceled)17. The method according to further comprising a step c) of removing the sheet obtained in step b) on the surface of at least one of the solid substrates wherein said sheet has been formed.19. The method according to claim 16 , wherein at least one of said solid substrates has a roughness between 0.2 nm and 2 nm.20. The method according to claim 16 , wherein both solid substrates claim 16 , between which the powder of multilayer material is placed claim 16 , are the same material or different materials.21. The method according to claim 16 , wherein at least one of the solid substrates has a hardness in Mohs scale between 4.5 and 10.22. The method according to claim 16 , wherein at least one of the solid substrates is made up of a material selected from the group consisting of: i. semiconductor materials,', 'ii. dielectric materials; and', 'iii. metals; or, 'a) inorganic materials selected from the group consisting ofb) other materials selected from the group consisting of plastic, paper and wood.23. The method according to claim 22 , wherein the solid substrate is made up of a semiconductor material selected from the group consisting of silicon and silicon carbide.24. The method according to claim 22 , wherein the solid substrate on which the sheet is formed is an inorganic metallic material selected from the group consisting of cobalt ...

THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME

The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate located on the substrate; a dielectric layer located on the gate; a semiconductor layer located on the dielectric layer and including nano-scaled semiconductor materials; and a drain and a source spaced apart from each other and electrically connected to the semiconductor layer. The dielectric layer is an oxide layer formed by magnetron sputtering and in direct contact with the gate. The thin film transistor has inverse current hysteresis. 1. A thin film transistor , comprising:a substrate;a gate on the substrate;a dielectric layer in direct contact with the gate, wherein the dielectric layer is an oxide dielectric layer formed by magnetron sputtering;a semiconductor layer on the dielectric layer, wherein the semiconductor layer comprises a plurality of nano-scaled semiconductor materials; anda source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer.2. The thin film transistor of claim 1 , wherein the oxide dielectric layer is a metal oxide dielectric layer.3. The thin film transistor of claim 2 , wherein the metal oxide dielectric layer is an aluminum oxide (AlO) layer.4. The thin film transistor of claim 1 , wherein the oxide dielectric layer is a silicon dioxide (SiO) layer.5. The thin film transistor of claim 1 , wherein a thickness of the dielectric layer is in a range of about 10 nanometers to about 1000 nanometers.6. The thin film transistor of claim 1 , wherein the plurality of nano-scaled semiconductor materials are materials selected from the group consisting of graphene claim 1 , carbon nanotubes claim 1 , molybdenum disulfide (MoS) claim 1 , tungsten disulfide (WS) claim 1 , manganese oxide (MnO) claim 1 , zinc oxide (ZnO) claim 1 , molybdenum selenide (MoSe) claim 1 , molybdenum(IV) telluride (MoTe) claim 1 , ...

THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME

The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer is an oxide dielectric layer formed by magnetron sputtering; and a gate in direct contact with the dielectric layer. The thin film transistor has inverse current hysteresis. 1. A thin film transistor , comprising:a substrate;a semiconductor layer on the substrate, wherein the semiconductor layer comprises a plurality of nano-scaled semiconductor materials;a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer;a dielectric layer on the semiconductor layer, wherein the dielectric layer is an oxide dielectric layer formed by magnetron sputtering; anda gate in direct contact with the dielectric layer.2. The thin film transistor of claim 1 , wherein the oxide dielectric layer is a metal oxide dielectric layer.3. The thin film transistor of claim 2 , wherein the metal oxide dielectric layer is an aluminum oxide (AlO) layer.4. The thin film transistor of claim 1 , wherein the oxide dielectric layer is a silicon dioxide (SiO) layer.5. The thin film transistor of claim 1 , wherein a thickness of the dielectric layer is in a range of about 10 nanometers to about 1000 nanometers.6. The thin film transistor of claim 1 , wherein the plurality of nano-scaled semiconductor materials are materials selected from the group consisting of graphene claim 1 , carbon nanotubes claim 1 , molybdenum disulfide (MoS) claim 1 , tungsten disulfide (WS) claim 1 , manganese oxide (MnO) claim 1 , zinc oxide (ZnO) ...

MOS2 THIN FILM AND METHOD FOR MANUFACTURING SAME

The present disclosure relates to a MoSthin film and a method for manufacturing the same. The present disclosure provides a MoSthin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoSthin film is manufactured by an atomic layer deposition method without using a toxic gas such as HS as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoSthin film by precisely controlling the thickness of the MoSthin film to the level of an atomic layer. 119-. (canceled)20. A MoSthin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method.21. The MoSthin film according to claim 20 , wherein the molybdenum precursor is one or more selected from a group consisting of MoF claim 20 , MoCland Mo(CO).22. The MoSthin film according to claim 20 , wherein the sulfur precursor is a dialkyl disulfide or a dihalodisulfide.23. The MoSthin film according to claim 20 , wherein the Raman spectrum of the MoSthin film has peaks observed at 375-385 cmand 400-410 cm.24. The MoSthin film according to claim 20 , wherein the MoSthin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor claim 20 , a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery.25. The MoSthin film according to claim 20 , wherein the molybdenum precursor is Mo(CO)and the sulfur precursor is dimethyl disulfide.26. The MoSthin film according to claim 25 , wherein the ALD temperature window of the atomic layer deposition method is 100-120° C.27. A method for manufacturing a MoSthin film claim 25 , comprising:1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state ...

TOP-DOWN SYNTHESIS OF TWO-DIMENSIONAL NANOSHEETS

A method for synthesizing two-dimensional (2D) nanosheets comprises heating a bulk material in a solvent. The process is scalable and can be used to produce solution-processable 2D nanosheets with uniform properties in large volumes. 1. A method of preparing a two-dimensional (2D) nanosheet , the method comprising:heating a bulk material in a solvent for a time sufficient to effect the conversion of the bulk material into the two-dimensional nanosheet.2. The method of claim 1 , wherein the bulk material is a transition metal dichalcogenide (TMDC).3. The method of claim 2 , wherein the TMDC is MoS.4. The method of claim 2 , wherein the TMDC is MoSe.5. The method of claim 2 , wherein the TMDC is WS.6. The method of claim 2 , wherein the TMDC is WSe.7. The method of claim 1 , wherein the solvent is selected from the group consisting of alkyl amines claim 1 , fatty acids claim 1 , phosphines claim 1 , phosphine oxides claim 1 , alcohols claim 1 , alkanes claim 1 , and any combination thereof.8. The method of claim 1 , wherein the solvent is a coordinating solvent.9. The method of claim 1 , wherein the solvent is a non-coordinating solvent.10. The method of claim 1 , wherein the heating is performed under reflux conditions.11. A two-dimensional (2D) nanosheet prepared according to the method of claim 1 , wherein the 2D nanosheet exhibits a photoluminescence maximum (PL) between about 360 nm and about 575 nm.12. A two-dimensional (2D) nanosheet prepared according to the method of claim 1 , wherein the 2D nanosheet exhibits a light emission between about 375 nm and about 525 nm.13. A two-dimensional (2D) nanosheet prepared according to the method of claim 1 , wherein the 2D nanosheet exhibits a light emission between about 400 nm and about 610 nm. This application claims the benefit of U.S. Provisional Application No. 62/595,332, filed Dec. 6, 2017, the entire contents of which are incorporated by reference herein.Not ApplicableThe present invention generally relates to ...

A METHOD TO FABRICATE CHIP-SCALE ELECTRONIC PHOTONIC (PLASMONIC) - INTEGRATED CIRCUITS

Electronic-photonic integrated circuits (EPICs), such a monolithically integrated circuit, are considered to be next generation technology that takes advantage of high-speed optical communication and nanoscale electronics. Atomically thin transition metal dichalcogenides (TMDs) may serve as a perfect platform to realize EPIC. The generation and detection of light by a monolayer TMD at nanoscale through surface plasmon polaritons (SPPs) may be utilized to provide optical communication. The bidirectional nature of the TMDs allow such a layer to be utilizes as part of emitters or photodetectors for EPICs. 1. An optoelectronic device comprising:a waveguide;a 2D monolayer coupled to the waveguide, wherein the 2D monolayer is a transition metal dichalcogenide (TMD); andelectrodes coupled to the TMD.2. The device of claim 1 , further comprising an insulating layer claim 1 , wherein the 2D monolayer and the electrodes are positioned on the insulating layer; andgate electrodes positioned below the insulating layer.3. The device of claim 1 , wherein the optoelectronic device is an emitter that converts an electric signal into a surface plasmon polariton (SPP).4. The device of claim 1 , wherein the optoelectronic device is a photodetector that converts a surface plasmon polariton (SPP) into an electric signal.5. The device of claim 1 , wherein the optoelectronic device is bidirectional to allow conversion of an electric signal into a surface plasmon polariton (SPP) or conversion of the surface plasmon polariton (SPP) into the electric signal.6. The device of claim 1 , wherein the waveguide is formed from an Ag nanowire claim 1 , Au nanowire claim 1 , or Cu nanowire.7. The device of claim 1 , wherein the waveguide is a slot waveguide.8. The device of claim 1 , wherein the 2D monolayer is MoS claim 1 , WS claim 1 , or WSe.9. The device of claim 1 , wherein the optoelectronic device is integrated with a transistor claim 1 , optical detector claim 1 , optoelectronic modulator ...

SCROLL COMPOSITE HAVING AMPHIPHILIC SUBSTANCE INSIDE AND METHOD FOR PREPARATION OF THE SAME

Provided are a scroll preparing method using a two-dimensional material and a scroll prepared thereby. The scroll preparing method comprises preparing a two-dimensional material. The two-dimensional material is scrolled by providing an amphiphilic substance having a hydrophilic portion and a hydrophobic portion on the two-dimensional material. As a result, a scroll composite including the amphiphilic substance disposed inside a scroll structure is formed. 1. A scroll composite , comprising:a two-dimensional material scroll with open ends; andan amphiphilic substance disposed inside the scroll.2. The composite of claim 1 , wherein the two-dimensional material is a single substance selected from the group consisting of graphene claim 1 , graphene oxide claim 1 , boron nitride claim 1 , boron carbon nitride (BCN) claim 1 , tungsten oxide (WO) claim 1 , tungsten sulfide (WS) claim 1 , molybdenum sulfide (MoS) claim 1 , molybdenum telluride (MoTe) claim 1 , and manganese oxide (MnO) claim 1 , or a composite substance including a stack of two or more thereof.3. The composite of claim 1 , wherein the amphiphilic substance is a surfactant claim 1 , a bile acid claim 1 , a bile acid salt claim 1 , a hydrate of a bile acid salt claim 1 , a bile acid ester claim 1 , a bile acid derivative claim 1 , or a bacteriophage.4. The composite of claim 3 , wherein the surfactant includes one or more compounds selected from the group consisting of sodium dodecyl sulfate (SDS) claim 3 , ammonium lauryl sulfate claim 3 , sodium laureth sulfate claim 3 , alkyl benzene sulfonate claim 3 , cetyl trimethylammonium bromide (CTAB) claim 3 , hexadecyl trimethyl ammonium bromide claim 3 , an alkyltrimethylammonium salt claim 3 , cetylpyridinium chloride (CPCl) claim 3 , polyethoxylated tallow amine (POEA) claim 3 , benzalkonium chloride (BAC) claim 3 , benzethonium chloride (BZT) claim 3 , dodecyl betaine claim 3 , dodecyl dimethylamine oxide claim 3 , cocamidopropyl betaine claim 3 , alkyl poly( ...

CATHODES AND ELECTROLYTES FOR RECHARGEABLE MAGNESIUM BATTERIES AND METHODS OF MANUFACTURE

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of MoZand the precursors have a general formula of MMoZ. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte. 1. An electrochemical cell , comprising:an alkali-metal-containing anode; [{'sub': 6', '8', 'x', '6', '8, 'a Chevrel-phase material of a formula MoZderived from a precursor material of a formula MMoZ, wherein M is a metallic element, x is a number from 1 to 4 and Z is a chalcogen with or without a presence of oxygen; and'}, 'an electrolyte., 'a cathode, comprising2. The electrochemical cell of claim 1 , wherein the alkali-metal-containing anode comprises magnesium.3. The electrochemical cell of claim 1 , wherein the metallic element is selected from the group consisting of Li claim 1 , Na claim 1 , Mg claim 1 , Ca claim 1 , Sc claim 1 , Cr claim 1 , Mn claim 1 , Fe Co claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Sr claim 1 , Y claim 1 , Pd claim 1 , Ag claim 1 , Cd claim 1 , In claim 1 , Sn claim 1 , Ba claim 1 , La claim 1 , Pb claim 1 , Ce claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , Eu claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho claim 1 , Er claim 1 , Tm claim 1 , Yb claim 1 , Lu and mixtures thereof.4. The electrochemical cell of claim 1 , wherein the chalcogen Z is selected from chemical elements in Periodic Table Group 16.5. The electrochemical cell of claim 1 , wherein Z is selected from the group consisting of sulfur claim 1 , selenium claim 1 , tellurium and mixtures thereof.6. The electrochemical cell of claim 1 , wherein M is copper claim 1 , x is 2 and Z is sulfur.7. The electrochemical cell of claim 1 , wherein M is ...

Additive Composition And Composition Binding Agent For Superhard Material And Preparation Thereof, And Self-Sharpening Diamond Grinding Wheel And Preparation Thereof

Disclosed are an additive raw material composition and an additive for superhard material product, a method for preparing the additive, a composite binding agent, a superhard material product, a self-sharpening diamond grinding wheel and a method for manufacturing the same. The raw material composition consisting of components in following mass percentage: Bi2O3 25%˜40%, B2O3 25%˜40%, ZnO 5%˜25%, SiO2 2%˜10%, Al2O3 2%˜10%, Na2CO3 1%˜5%, Li2CO3 1%˜5%, MgCO3 0%˜5%, and CaF2 1%˜5%. The composite binding agent is prepared from the additive and a metal composite binding agent. The self-sharpening diamond grinding wheel prepared from the composite binding agent has high self-sharpness, high strength, and fine texture, is uniformly consumed during the grinding process, does not need to be trimmed during the process of being used, and maintains good grinding force all the time, fundamentally solving the problems of long trimming time and high trimming cost of the diamond grinding wheel. 1. An additive raw material composition for a superhard material product , consisting of components in a mass percentage as follows:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}2. An additive for a superhard material product , made from raw materials in a mass percentage as follows:{'sub': 2', '2', '3', '7', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO 25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}3. A method for preparing the additive according to claim 2 , comprising steps of:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3, '1) mixing BiO, BO, ZnO, SiO, AlO, NaCO, LiCO, and MgCOof the mass percentages, heating up to 1200˜1400° C. and keeping temperature for 1˜3 h to provide a mixture;'}{'sub': '2', '2) cooling the mixture obtained in Step 1) to 850˜950° C., adding CaFof the formula ratio ...

Template-Assisted Synthesis of 2D Nanosheets Using Nanoparticle Templates

A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.

Apparatus for producing molybdenum disulfide powders

Apparatus for reducing a particle size of a precursor powder material by fluid energy impact according to one embodiment of the invention may include a housing defining an interior milling cavity therein having a peripheral wall. A powder feed inlet operatively associated with the housing introduces the precursor powder material into the interior milling cavity. A feed gas inlet operatively associated with the powder feed inlet introduces a feed gas into the interior milling cavity. A product discharge outlet operatively associated with the housing removes a milled powder product from the interior milling cavity. An oil injection nozzle assembly operatively associated with the product discharge outlet injects oil into a particle-laden product stream from the product discharge outlet.

CATALYTIC PROCESSES FOR OBTAINING INORGANIC NANOSTRUCTURES BY USING SOFT METALS

The present invention concerns inorganic nanostructures comprising soft metals at low concentrations and catalytic processes utilizing soft metals for obtaining inorganic nanostructures. 1. A metal-oxide elongated nanostructure of the formula AM-oxide , wherein A being a metal and M being a soft metal foreign atom within a lattice structure of A-oxide , M being different than A , wherein 0 Подробнее

Cathodes and electrolytes for rechargeable magnesium batteries and methods of manufacture

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo6Z8 (Z=sulfur) or Mo6Z18-yZ2y (Z1=sulfur; Z2=selenium), and partially cuprated Cu1Mo6S8 as well as partially de-cuprated Cu1-xMgxMo6S8 and the precursors have a general formula of MxMo6Z8 or MxMo6Z18-yZ2y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

Methods of producing molybdenum disulfide powders

A method of producing powder product includes the steps of: Feeding a precursor powder material into a jet mill; feeding a gas into the jet mill to initiate a jet milling operation to produce size-reduced particles; and coating size-reduced particles with oil so that newly exposed surfaces of size-reduced particles are coated with oil, wherein the coating step includes one or more of a post-milling oil injection process and a pre-milling oil injection process.

Synthesis of luminescent 2d layered materials using an amine-metal complex and a slow sulfur-releasing precursor

A method of synthesis of two-dimensional (2D) nanoparticles comprises combining a first nanoparticle precursor and a second nanoparticle precursor in one or more solvents to form a solution, followed by heating the solution to a first temperature for a first time period, then subsequently heating the solution to a second temperature for a second time period, wherein the second temperature is higher than the first temperature, to effect the conversion of the nanoparticle precursors into 2D nanoparticles. In one embodiment, the first nanoparticle precursor is a metal-amine complex and the second nanoparticle precursor is a slow-releasing chalcogen source.

METHOD AND DEVICE FOR PRODUCTION OF GRAPHENE OR GRAPHENE-LIKE MATERIALS

A method and a device for the production of graphene or graphene-like material are provided. The method can comprise the following steps: providing particles of a crystalline graphitic material; dispersing the particles in a solvent or surfactant mixture; submitting the mixture to a cavitation force such that cavitation bubbles are present; and submitting the mixture to high shear agitation. The cavitation and high shear agitation steps can be simultaneous, in particular in the same enclosed vessel. The device for the production of graphene or graphene-like material can comprise a reactor having an enclosed vessel for receiving a solvent or surfactant mixture with dispersed particles of a crystalline graphitic material. The reactor can be arranged for: submitting the mixture in the enclosed vessel to a cavitation force such that cavitation bubbles are present and, simultaneously in the same enclosed vessel, submitting the mixture to high shear agitation. 1. A method for the production of graphene or graphene-like material , comprising the following steps:providing particles of a crystalline graphitic material;dispersing the particles of the crystalline graphitic material in a solvent mixture or surfactant mixture;submitting the mixture to a cavitation force such that cavitation bubbles are present; andsubmitting the mixture to high shear agitation of 2000 to 35000 RPM.2. The method of claim 1 , wherein the steps of submitting the mixture to the cavitation force and submitting the mixture to high shear agitation are simultaneous claim 1 , and are performed in a single enclosed vessel.3. The method of claim 1 , wherein the crystalline graphitic material is provided at 0.25 to 25 mg/mL.4. The method of claim 1 , wherein the cavitation bubbles have a radius size within a range of 0.2 to 18 μm.5. The method of claim 1 , wherein the cavitation force is modulated in working frequency of a 1-5% range of a sweep function.6. The method of claim 1 , wherein the high shear ...

Template-Assisted Synthesis of 2D Nanosheets Using Nanoparticle Templates

A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.

MoS2 Foam

A method for the synthesis of molybdenum disulphide foam wherein the porosity of the foam can be controlled. The porosity of the foam is employed to adapt the foam to various processes and specific requirements. The foam molybdenum disulphide structures have internal cavities are interconnected to create a large processing surface area 1. A method for the synthesis of molybdenum sulfide foam comprising:providing a solid material of molybdenum sulfide;selecting one or more intercalation species;inserting the one or more intercalation species into the solid material; andfoaming the resulting material.2. The method of claim 1 , wherein the one or more intercalation species are selected from the group consisting of alkali metals.3. A method for the synthesis of molybdenum sulfide foam comprising:providing a combination of precursors;drying the combination of precursors to form a film; andheating the film to generate the molybdenum sulfide foam.4. The method of claim 3 , wherein the heating takes place in a nitrogen gas atmosphere.5. The method of claim 3 , wherein the precursors comprises at least one of laponite claim 3 , PVOH and ammonium tetrathiomolybdate.6. A chemical catalysis form of porous molybdenum disulfide having a plurality of interconnecting cavities in the form of a foam.7. A method of removing sulfur from a fluid comprising:placing a catalyst of molybdenum sulfide foam in the fluid.8. The method of claim 7 , wherein the molybdenum sulfide is MoS. This application claims priority to and benefit of U.S. Provisional Application No. 62/119,534 filed on 23 Feb. 2015.The aforementioned provisional patent application is hereby incorporated by reference in its entirety.None.1. Field of the InventionThe present invention relates to the production of a foam, for example from molybdenum sulfide (MoS), and more particularly, synthesis of molybdenum sulfide (MoS) foam.2. Brief Description of the Related ArtThere is a great demand for energy worldwide due to increases ...

Quaternary ammonium sulfur-containing binuclear molybdate salts as lubricant additives

The present invention relates to lubricating compositions comprising a compound of Formula I: wherein R 1 -R 4 and R 5 -R 8 are independently selected from the group consisting of hydrocarbyl groups and hydrocarbyl groups containing heteroatoms, such that the total carbon atoms from counterions Q 1 and Q 2 is from 8 to 76, and molybdate anion (Y) is a binuclear sulfur-containing dianion selected from the group consisting of [Mo 2 S 8 O 2 ] 2− , [Mo 2 S 9 O] 2− , [Mo 2 S 10 ] 2− , and mixtures thereof, and are present in the lubricating composition in an amount sufficient to provide about 100-15,000 ppm molybdenum.

Non-Lithium Metal Ion Battery Electrode Material Architecture

A method for configuring a non-lithium-intercalation electrode includes intercalating an insertion species between multiple layers of a stacked or layered electrode material. The method forms an electrode architecture with increased interlayer spacing for non-lithium metal ion migration. A laminate electrode material is constructed such that pillaring agents are intercalated between multiple layers of the stacked electrode material and installed in a battery. 1. A battery electrode material architecture comprising:{'sub': x', 'y', 'z, 'sup': 'n+', 'a composition of AMN, a pillaring agent, and at least one non-lithium metal ion X,'}wherein:A is at least one low-valence element chosen from the group consisting of H, alkaline, and alkaline earth metals, and 0≦x≦1.5;M is at least one metal and 1≦y≦2.5;N is at least one non-metal element chosen from the group consisting of O, S, Se, N, P, Br, and I, and 1.8≦z≦4.2; andX is at least one non-lithium metal ion chosen from the group consisting of Na, K, Mg, Ca, Al, Ga, and Y, and 1≦n≦3.2. The battery electrode material architecture of claim 1 , wherein a low-valence element further comprises at least one chosen from the group consisting of Li claim 1 , Na claim 1 , K claim 1 , Mg claim 1 , and Ca.3. The battery electrode material architecture of wherein a metal comprises a metal chosen from the group consisting of Ti claim 1 , Zr claim 1 , V claim 1 , Ta claim 1 , Cr claim 1 , Mo claim 1 , W claim 1 , Mn claim 1 , Fe claim 1 , Ni claim 1 , Co claim 1 , Cu claim 1 , Zn claim 1 , Cd claim 1 , Ga claim 1 , In claim 1 , Sn claim 1 , Pb claim 1 , Sb claim 1 , Bi claim 1 , and Te4. The battery electrode material architecture of claim 1 , wherein the pillaring agent comprises at least one electrically neutral polymer containing O claim 1 , N claim 1 , F claim 1 , and/or S atoms.5. The battery electrode material architecture of claim 4 , wherein at least one electrically neutral polymer comprises at least one polymer chosen from the ...

Method of forming a semiconductor device using layered etching and repairing of damaged portions

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

MoSxOy/CARBON NANOCOMPOSITE MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF

Provided are a MoSO/carbon nanocomposite material, a preparation method therefor and a use thereof. In the MoSO/carbon nanocomposite material, 2.5≤x≤3.1, 0.2≤y≤0.7, and the mass percent of MoSOis 5%-50% based on the total mass of the nanocomposite material. When the MoSO/carbon nanocomposite material is used as a catalyst for an electrocatalytic hydrogen evolution reaction, the current density is 150 mA/cmor more at an overpotential of 300 mV. The difference between this performance and the performance of a commercial 20% Pt/C catalyst is relatively small, or even equivalent; and this performance is far better than the catalytic performance of an existing MOScomposite material. The MoSO/carbon nanocomposite material also has a good catalytic stability, and after 8,000 catalytic cycles, the current density thereof is only decreased by 3%, thus exhibiting a very good catalytic performance and cycle stability. 1. A MoSO/carbon nanocomposite material , wherein 2.5≤x≤3.1 , 0.2≤y≤0.7.2. The nanocomposite material according to claim 1 , wherein the MoSOaccounts for 5-50% in mass claim 1 , based on the total mass of the nanocomposite material.3. A method for preparing the nanocomposite material according to claim 1 , comprising:(1) dispersing a carbon source in a solvent to obtain a carbon source dispersion;(2) adding a sulfur source and a molybdenum source to the carbon source dispersion to obtain a mixed solution; and(3) irradiating the mixed solution by a γ-ray or an electron beam; after irradiation, separating and drying to obtain the nanocomposite material.4. The method for preparing the nanocomposite material according to claim 3 , wherein the sulfur source and the molybdenum source come from the same compound claim 3 , and the compound is present in the mixed solution at a concentration of 1-10 mg/mL or 1-5 mg/mL;orthe sulfur source and the molybdenum source come from the different compounds, wherein the molybdenum source and the sulfur source are present in the ...

Method to Synthesize Metal Chalcogenide Monolayer Nanomaterials

Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes. 2. The method of claim 1 , wherein the transition metal comprises tungsten or molybdenum.3. The method of claim 2 , wherein M(OR)comprises W(OEt).4. The method of claim 1 , wherein the alkaline earth metal comprises calcium claim 1 , strontium claim 1 , or barium.5. The method of claim 4 , wherein M(OR)comprises Ca(OAr).6. The method of claim 4 , wherein M(OR)comprises A(ONep)and Acomprises strontium or barium.8. The method of claim 7 , wherein the alkaline earth metal comprises calcium claim 7 , strontium claim 7 , or barium.9. The method of claim 8 , wherein M(OR)comprises Ca(OAr).10. The method of claim 8 , wherein M(OR)comprises A(ONep)and Acomprises strontium or barium.11. The method of claim 7 , wherein the transition metal comprises cadmium.12. The method of claim 11 , wherein M(OR)x comprises Cd(OAr)or Cd(ONep) This application claims the benefit of U.S. Provisional Application No. 61/968,182, filed Mar. 20, 2014, which is incorporated herein by reference.This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.The present invention relates to metal chalcogenides and, in particular, to a method to synthesize metal chalcogenide monolayer nanomaterials.Synthetic routes to tungsten disulfide (WS) and molybdenum disulfide (MoS) nanomaterials (e.g., two-dimensional (2D) monolayers) are of interest for lubricants, catalyst, Li-ion batteries, semiconductors, and photodiodes. Previous efforts to synthesize bulk WSnanomaterials involved chemical vapor deposition techniques, fluidized bed reactors, gas-solid reactions, laser ablation, and spray pyrolysis. For the production of 2D ...

Preparation of nanosheets via ball milling in the presence of reactive gases

A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.

2D MATERIALS

The synthesis of 2D metal chalcogenide nanosheets and metal-ion or metalloid-ion doped 2D metal chalcogenide nanosheets by adding a metal complex to a hot dispersing medium. The mean lateral dimension of the nanosheets may be controlled by appropriate temperature selection. 1. A method for the synthesis of 2D metal chalcogenide nanosheets , the method comprising adding a metal complex to a dispersing medium which is at elevated temperature , wherein the metal complex comprises a metal ion and a ligand comprising at least two atoms selected from oxygen , sulfur , selenium , and tellurium , to form a dispersion of the 2D metal chalcogenide nanosheets in the dispersing medium.2. A method for the synthesis of metal-ion or metalloid-ion doped 2D metal chalcogenide nanosheets , the method comprising adding a metal complex to a dispersing medium which is at elevated temperature , wherein the reaction is performed in the presence of a salt of said metal or metalloid ion , and wherein the complex comprises a metal ion and a ligand comprising at least two atoms selected from oxygen , sulfur , selenium and tellurium , to form a dispersion of the 2D metal chalcogenide nanosheets in the dispersing medium.3. The method of claim 1 , wherein the ligand comprises at least two atoms selected from sulfur and selenium.4. The method of claim 1 , wherein the metal complex comprises a transition metal ion claim 1 , optionally wherein the metal complex comprises a molybdenum or tungsten ion.5. The method of claim 1 , wherein the method is a method for the synthesis of metal-ion doped 2D metal chalcogenide nanosheets claim 1 , optionally wherein the metal ion is selected from manganese claim 1 , iron claim 1 , cobalt claim 1 , nickel claim 1 , copper claim 1 , and zinc.6. The method of claim 1 , wherein the salt of said metal or metalloid ion is a halide claim 1 , optionally wherein the salt is a chloride.7. The method of claim 1 , wherein the ligand is a chalcogenocarbamate or ...

THIN-FILM MANUFACTURING METHOD, THIN-FILM MANUFACTURING APPARATUS, MANUFACTURING METHOD FOR A PHOTOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD FOR A LOGIC CIRCUIT, MANUFACTURING METHOD FOR A LIGHT-EMITTING ELEMENT, AND MANUFACTURING METHOD FOR A LIGHT CONTROL ELEMENT

[Object] To provide a thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials can be performed. 1. A thin-film manufacturing method , comprising:bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal;heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal;supplying a film-forming raw material to the first region; andforming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.2. The thin-film manufacturing method according to claim 1 , whereinthe thin film is a laminated film in which different kinds of materials are laminated.3. The thin-film manufacturing method according to claim 1 , further comprisingapplying voltage between the first terminal and the second terminal and controlling the reaction time by using movement speed of the film-forming target while moving the film-forming target with respect to the first terminal and the second terminal.4. The thin-film manufacturing method according to claim 3 , further comprisingconveying the film-forming target by a roll-to-roll process and moving the film-forming target with respect to the first terminal and the second terminal.5. The thin-film manufacturing method according to claim 1 , further comprisingcontrolling the reaction time by using application time of voltage on the first terminal and the second terminal.6. The thin-film manufacturing method according to claim 5 , further comprising:stopping voltage application between the ...

Transition metal dichalcogenide aerogels and methods of preparation and use

Methods of forming transition metal dichalcogenide aerogels are provided. Some methods include adding at least one solvent to one or more two-dimensional transition metal dichalcogenide sheets to form a transition metal dichalcogenide solution and freeze drying the transition metal dichalcogenide solution to form frozen transition metal dichalcogenide, The methods also include heating the frozen transition metal dichalcogenide to form a transition metal dichalcogenide aerogel,

METHOD OF FORMING A SEMICONDUCTOR DEVICE USING LAYERED ETCHING AND REPAIRING OF DAMAGED PORTIONS

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te. 1. A method of fabricating a semiconductor device , comprising:plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films; andafter plasma etching, applying an additional quantity of the chalcogen to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching,wherein the chalcogen is S, Se, or Te.2. The method according to claim 1 , wherein the plasma is selected from the group consisting of oxygen claim 1 , argon claim 1 , hydrogen claim 1 , and reactive-ion etch gases.3. The method according to claim 1 , wherein the metal dichalcogenide films comprise a metal dichalcogenide selected from the group consisting of WS claim 1 , MoS claim 1 , WSe claim 1 , MoSe claim 1 , WTe claim 1 , and MoTe.4. The method according to claim 1 , wherein the substrate comprises silicon claim 1 , silicon oxide claim 1 , or aluminum oxide.5. The method according to claim 1 , wherein a plasma power ranges from about 20 W to about 60 W claim 1 , and an etching time ranges from about 5 sec. to about 60 sec.6. The method according to claim 1 , wherein the applying a chalcogen to remaining portions of the plurality of metal dichalcogenide films is a re-sulfurization operation in which evaporated sulfur is ...

Sorting Two-Dimensional Nanomaterials by Thickness

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s). 1. A method for separating planar nanomaterials by thickness , the method comprising:centrifuging a transition metal dichalcogenide nanomaterial composition in contact with an aqueous fluid medium comprising a density gradient, wherein the transition metal dichalcogenide nanomaterial composition comprises one or more surface active components and a polydisperse population of planar transition metal dichalcogenide nanomaterials which is polydisperse at least with respect to thickness and has a mean thickness on the order of nanometers; andseparating the transition metal dichalcogenide nanomaterial composition into two or more separation fractions each comprising a subpopulation of planar transition metal dichalcogenide nanomaterials from the polydisperse population, wherein the subpopulation of planar transition metal dichalcogenide nanomaterials in at least one of the two or more separation fractions has a mean thickness that is less than the mean thickness of the polydisperse population.2. The method of claim 1 , wherein the planar nanomaterials comprise MoS claim 1 , MoSe claim 1 , WSor WSeplanar nanomaterials.3. The method of claim 1 , wherein the one or more surface active components comprise a planar organic group.4. The method of claim 3 , wherein the one or more surface active components is a copolymer of oxyethylene and oxypropylene.5. A method for separating transition metal dichalcogenide nanomaterials by thickness claim 3 , the method comprising:sonicating transition metal dichalcogenide in a first fluid medium to provide a transition metal dichalcogenide nanomaterial composition;centrifuging the transition metal dichalcogenide nanomaterial composition in contact with an aqueous second fluid ...

Method of forming a semiconductor device using layered etching and repairing of damaged portions

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

METHOD FOR PRODUCING A CATALYST

The present invention relates to the use of a molybdenum carboxylate as precursor of a catalyst based on molybdenum sulfide, and also to the process for preparing such a catalyst. The invention also relates to certain molybdenum carboxylates. 117-. (canceled)18. A process for preparing a catalyst based on molybdenum sulfide , the process comprising converting at least one molybdenum carboxylate into molybdenum sulfide; wherein the molybdenum carboxylate is selected from the group consisting of molybdenum neodecanoate , molybdenum nonanoate , molybdenum 3 ,5 ,5-trimethylhexanoate and molybdenum iso-octadecanoate.19. The process of claim 18 , wherein the catalyst based on molybdenum sulfide is used in a hydroconversion process.20. The process of claim 19 , wherein the hydroconversion process is a process for the hydroconversion of a heavy feedstock.21. The process of claim 18 , wherein the catalyst based on molybdenum sulfide is prepared in situ in a hydroconversion reactor.22. The process of claim 18 , wherein the catalyst based on molybdenum sulfide is in the form of nanoparticles of MoS.23. The process of claim 22 , wherein the nanoparticles of MoSare in the form of sheets.24. The process of claim 22 , wherein the nanoparticles of MoSare suspended in a hydroconversion reactor or dispersed at the surface of carbon-based particles present in a hydroconversion reactor.25. The process of claim 18 , further comprising combining the molybdenum sulfide with a cracking catalyst which is in the form of micrometric or nanoscale particles.26. The process of claim 25 , wherein nanoparticles of molybdenum sulfide are dispersed at the surface of the particles of the cracking catalyst.27. The process of claim 18 , wherein the catalyst based on molybdenum sulfide is composed of particles of a mineral material claim 18 , on which a layer of molybdenum sulfide is partially or completely deposited.28. The process of claim 27 , wherein the mineral material is preferably in the form of ...

METHOD FOR TUNING THE THERMAL CONDUCTIVITY OF A NANOLAYERED MATERIAL AND THERMAL INSULATORS PREPARED THEREBY

A method for tuning the thermal conductivity of a nanolayered material is presented. The method includes a step of intercalating the nanolayered material with cations, based on a correlation between cation loading density and thermal conductivity. A bond coat of a thermal barrier system is also disclosed. The bond coat includes a nanolayered material intercalated with cations at a specified loading density based on a correlation between cation loading density and thermal conductivity. 1. A method for tuning a thermal conductivity of a nanolayered material , the method comprising:measuring a thermal conductivity for each of a plurality of reference samples, each sample of the plurality of reference samples comprising a nanolayered material intercalated with molecules, ions, or a combination thereof at a specified loading density;determining a correlation between the thermal conductivity and the loading density;selecting a specified loading density based on the correlation to yield a desired thermal conductivity of the nanolayered material; andintercalating molecules, ions, or a combination thereof into the nanolayered material at the specified loading density, thereby adjusting the thermal conductivity of the nanolayered material.2. The method as recited in claim 1 , wherein intercalating the nanolayered material comprises one of cathodizing the nanolayered material in an electrochemical cell claim 1 , and intercalating by diffusion.3. The method as recited in claim 2 , wherein cathodizing the nanolayered material in an electrochemical cell further comprises:choosing a selected electrical potential and a selected duration to achieve a particular thermal conductivity based on the correlation; andcontrolling an amount of intercalation by cathodizing the nanolayered material at the selected electrical potential and for the selected duration.4. The method as recited in claim 1 , wherein the nanolayered material comprises a plurality of nanolayers arranged in a parallel ...

SENSOR FOR DETECTING GAS ANALYTE

A sensor and a method of using the sensor are disclosed. The sensor includes a conductive region in electrical communication with two electrodes, the conductive region including metallic nanowires, nanosized particles of a dichalcogenide, and a mercaptoimidazolyl metal-ligand complex. The sensor can be used to detect volatile compounds that have a double or triple bond.

Quaternary Ammonium Sulfur-Containing Binuclear Molybdate Salts as Lubricant Additives

wherein R1-R4 and R5-R8 are independently selected from the group consisting of hydrocarbyl groups and hydrocarbyl groups containing heteroatoms, such that the total carbon atoms from counterions Q1 and Q2 is from 8 to 76, and molybdate anion (Y) is a binuclear sulfur-containing dianion selected from the group consisting of [Mo2S8O2]2−, [Mo2S9O]2−, [Mo2S10]2, and mixtures thereof, and are present in the lubricating composition in an amount sufficient to provide about 100-15,000 ppm molybdenum.

HYDROTHERMAL SYNTHESIS OF ALKALI PROMOTED MOS2-BASED CATALYST

Certain embodiments are directed to method for making and using an alkali promoted transition metal sulfide Fischer Tropsch catalyst. Certain embodiments are directed to alkali promoted transition metal sulfide Fischer Tropsch catalyst synthesized using steps comprising (i) mixing an ammonium tetrathiomolybdate (ATM) precursor compound with an alkali metal compound and molybdenum disulfide in deionized water to form a reaction mixture, (ii) heating the reaction mixture at a temperature of at least 200, 250, 300, 350, 400C at a pressure of at lease 900, 1000, 1100, 1500, 2000 psi for more than 0.5 1, 1.5, 2.0, 3 or more hours to form a reaction product, (iii) filtering, washing, and drying the reaction product. 1. A method of synthesizing alkali promoted transition metal sulfide Fischer-Tropsch catalyst using steps comprising of:(i) mixing an ammonium tetrathiomolybdate (ATM) precursor compound with an alkali metal compound and molybdenium disulfide in deionized water forming a reaction mixture;(ii) heating the reaction mixture at a temperature above 250° C. and at a pressure above 1000 psi for more than 1 hour to form a transition metal sulfide Fischer-Tropsch catalyst; and(iii) filtering, washing, and drying the transition metal sulfide Fischer-Tropsch catalyst.2. Method of claim 1 , wherein the ATM precursor claim 1 , alkali metal claim 1 , and molybdenium is present at a starting molar ratio of about 5:0.3:1.3. Method of claim 1 , wherein the alkali metal is potassium.4. Method of claim 1 , wherein the ammonium tetrathiomolybdate (ATM) precursor compound is synthesized by steps comprising:(i) dissolving heptamolybdate in deionized water,(ii) adding ammonium sulfide solution, and(iii) heating the solution above 55° C. for 30 minutes with stirring to produce the ammonium tetrathiomolybdate (ATM) precursor compound.5. A Fischer-Tropsch catalyst produce by the method of .6. The catalyst of claim 5 , whererin the catalyst is a Cs.CoMoScatalyst.7. A method of ...

METHOD FOR CREATING NANOPORES IN MOS2 NANOSHEETS BY CHEMICAL DRILLING FOR DISINFECTION OF WATER UNDER VISIBLE LIGHT

The present invention relates to a new method for creating nanopores in single layer molybdenum disulfide (MoS) nanosheets (NSs) by the electrospray deposition (ESD) of silver ions on a water suspension of the former. Electrospray deposited silver ions react with the MoSNSs at the liquid-air interface resulting in AgS nanoparticles (NPs) which goes into the solution leaving the NSs with holes of 3-5 nm diameter. Specific reaction with the S of MoSNSs leads to Mo-rich edges. Such Mo-rich defects are highly efficient for the generation of active oxygen species such as HO, under visible light, which causes efficient disinfection of water. The holey MoSNSs shows 10times higher efficiency in disinfection compared to normal MoSNSs. Developed a conceptual prototype and tested with multiple bacterial strains and a viral strain, demonstrating the utility of the method for practical applications. 1. A method of making nanoscale holes in a two dimensional MoSnanosheets , the method comprising: electrospray deposition of reactive Ag ions onto a two dimensional MoSnanosheet , wherein the Ag ions react with MoSnanosheet forming AgS , resulting in a defect-rich MoSnanosheet; wherein the said nanoscale holes in MoSnanosheet generates HOunder visible light for disinfection.2. The method of making nanoscale holes in two dimensional MoSnanosheets as claimed in claim 1 , wherein Ag ions are selected from various salts of Ag including but not limited to silver acetate claim 1 , silver nitrate claim 1 , silver perchlorate.3. The method of making nanoscale holes in two dimensional MoSnanosheets as claimed in claim 1 , wherein the nanoscale holes are of dimensions below 20 nm.4. The method of making nanoscale holes in two dimensional MoSnanosheets as claimed in claim 1 , wherein the reaction process makes nanoporous MoSnanosheets with Mo-rich edges.5. The method of making nanoscale holes in two dimensional MoSnanosheets as claimed in claim 1 , wherein the metal ions used are monovalent ...

Scroll composite having amphiphilic substance inside and method for preparation of the same

Provided are a scroll preparing method using a two-dimensional material and a scroll prepared thereby. The scroll preparing method comprises preparing a two-dimensional material. The two-dimensional material is scrolled by providing an amphiphilic substance having a hydrophilic portion and a hydrophobic portion on the two-dimensional material. As a result, a scroll composite including the amphiphilic substance disposed inside a scroll structure is formed.

ELECTRONIC BEAM MACHINING SYSTEM

The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots. 1. An electronic beam machining system , comprising:a vacuum chamber;an electron gun located in the vacuum chamber and configured to emit an incident electron beam;a holder located in the vacuum chamber, spaced from the electron gun, and configured to secure an object;a diffraction unit located between the electron gun and the holder, wherein the diffraction unit comprises a two-dimensional nanomaterial, the incident electron beam is configured to transmit the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams, and the transmission electron beam and the plurality of diffraction electron beams is configured to radiate the object to form a transmission spot and a plurality of diffraction spots; anda control computer.2. The electronic beam machining system of claim 1 , wherein the two-dimensional nanomaterial comprises a graphene sheet.3. The electronic beam machining system of claim 1 , wherein the two-dimensional nanomaterial comprises a MoSsheet.4. The electronic beam machining system of claim 1 , wherein the diffraction unit further comprises a grid claim 1 , and the two-dimensional nanomaterial and the grid are stacked with each other.5. The electronic beam machining system of claim 4 , wherein the grid is a copper mesh.6. The ...

Additive Raw Material Composition and Additive for Superhard Material Product, Preparation Method of the Additive, Composite Binding Agent and Superhard Material Product, Self-Sharpening Diamond Grinding Wheel and Preparation Method of the Same

Disclosed are an additive raw material composition and an additive for superhard material product, a composite binding agent, a superhard material product, a self-sharpening diamond grinding wheel and a method for manufacturing the same. The raw material composition consisting of components in following mass percentage: BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%-5%, MgCO0%˜5%, and CaF1%˜5%. The composite binding agent is prepared from the additive and a metal composite binding agent. The self-sharpening diamond grinding wheel prepared from the composite binding agent has high self-sharpness, high strength, and fine texture, is uniformly consumed during the grinding process, does not need to be trimmed during the process of being used, and maintains good grinding force all the time, fundamentally solving the problems of long trimming time and high trimming cost of the diamond grinding wheel (FIG. ). 1. An additive for a superhard material product , made from raw materials in a mass percentage as follows:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'BiO25%˜40%, BO25%˜40%, ZnO 5%˜25%, SiO2%˜10%, AlO2%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO0%˜5%, and CaF1%˜5%.'}2. A self-sharpening diamond grinding wheel claim 1 , comprising an abrasive block claim 1 , wherein raw materials of the abrasive block comprise a metal binding agent claim 1 , MoS claim 1 , SG abrasive claim 1 , diamond and the additive of ; andthe content of mass percentage of the additive in the raw materials of the abrasive block is 1%˜10%.3. The self-sharpening diamond grinding wheel according to claim 2 ,{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2', '3', '3', '2, 'wherein the additive is made from raw materials in a mass percentage as follows: BiO25%˜35%, BO25%˜35%, ZnO 5%˜10%, SiO5%˜10%, AlO5%˜10%, NaCO1%˜5%, LiCO1%˜5%, MgCO1%˜5%, and CaF1%˜5%.'}4. The self-sharpening diamond grinding wheel according to claim 2 , wherein the additive is ...

A NOVEL PEPTIDE AND USE THEREOF

(Technical problems to be solved) Providing a method for selecting an mineral of molybdenum. (Means for solving the problems) A peptide comprising an amino acids sequence according the following formula (1) and/or (2): (1) (ALRKNMD-FCPQSETGWHYIV)-(LIVFA)-(HPWRK)-(TSNQ)-(TSNQ)-(LIVFA)-(TSNQ)-(TSNQ)-(LIVFA)-(FYW)-(LIVFA)-(HPWRK) (2) (LIVFA)-(RHK)-(TSNQ)-(LIVFA)-(LIVFA)-(TSNQ)-(LIVFA)-(LIVFA)-(LIVFA)-(RHK)-(RHK)-(HPW) wherein one amino acid is respectively selected from each group defined by paired parentheses. 18-. (canceled)17. A particle comprising on its surface the peptide of .18. A purification column comprising the peptide of .19. A reagent for use of floatation comprising the peptide of .20. A method for isolating molybdenum mineral claim 9 , the method comprising using the peptide of .21. A method for selecting a mineral claim 9 , the method comprising using the composition of .22. The method of claim 21 , wherein the mineral is molybdenite.23. The method of claim 21 , the method comprising:adding a microorganism into mineral dispersion, wherein the microorganism comprises the peptide on its surface;aggregating and precipitating the mineral; andrecovering the aggregated and precipitated mineral.24. The method of claim 21 , the method comprising:affixing the peptide to a carrier;introducing the carrier into a column for chromatography; andpassing mineral dispersion through the column.25. The method of claim 21 , the method comprising:affixing the peptide to a particle; andintroducing the particle into mineral dispersion.26. The method of claim 21 , the method comprising froth floating with use of the peptide.27. The method of claim 25 , wherein pH of the mineral dispersion is 4 or more.28. The method of claim 25 , wherein pH of the mineral dispersion is 7 or more. The present invention is related to a novel peptide and use thereof. More particularly, the present invention is related to a novel peptide specifically biding to a certain element and use thereof. ...

Efficient NanoMaterials manufacturing process and equipment

An efficient method has been invented to make or manufacture holey (or porous) nanomaterials such as 2D graphene by using microwave or similar efficient energy like infrared or halogen oven. The graphene can be put in microwave oven, as example but not limited to, without any catalysts or solvents used during the processes. 1b) Porous or holey nanomaterials such as holey graphene can be manufactured by using more efficient, integrated processes and/or equipment of microwave (or infrared etc) assisted synthesis, blending and/or ultrasound.c) The heating energy, duration, and temperature can vary or be controlled for desirable results.d) Various components or materials such as catalysts, solvents etc, can be added for specific effects or improvements before, during or after the process;e) The hole sizes, density, distribution, location, area or defect degrees in the 2D nanomaterials can be controlled by energy power, processing time, temperature, additional materials or processes etc;f) The energy used for manufacturing can be greatly reduced;g) The process time can be greatly reduced, even down to seconds in certain cases;h) The process can be performed in air, inert circumstance, vacuum or special gas or other desirable environments;i) The process can be intermittent, roll-to-roll mode, or any other continued or continuous processes such as a belt or plate moving or rotating;{'sub': '2', 'j) This efficient process can be used for many materials, including nanomaterials, 2D nanomaterials, graphene, graphene oxide (GO), boron nitride (BN), molybdenum disulfide (MoS), black phosphorus, etc;'}k) The thickness of materials can vary from a single atom layer, nanometer, sub-micrometer, micrometer, to bulk like several micro meters or more;l) Compression or compaction or other processes can be applied for many desirable effects such as volume reduction, conductivity, mechanical strength, specific porosity or transports etc;m) These materials can be used in many applications ...

1T-PHASE TRANSITION METAL DICHALCOGENIDE NANOSHEETS

A method for the production of 1T-transition metal dichalcogenide few-layer nanosheets and/or monolayer nanosheets comprising electrochemical intercalation of lithium ions into a negative electrode comprising a bulk 2H-transition metal dichalcogenide to provide an intercalated electrode, and an exfoliation step comprising contacting the intercalated electrode with a protic solvent to produce 1T-transition metal dichalcogenide few-layer nano sheets and/or monolayer nanosheets. An electrochemical capacitor comprising a composite electrode comprising 1T-MoSnanosheets and graphene, and a method of producing a composite electrode for use in an electrochemical capacitor. 1. A method of producing 1T-transition metal dichalcogenide few-layer nanosheets and/or monolayer nanosheets , the method comprising:(i) an electrochemical intercalation step in an electrochemical cell, the cell comprising a negative electrode comprising a bulk 2H-transition metal dichalcogenide, a counter electrode which is not lithium, and an electrolyte comprising a lithium salt in a solvent, wherein said solvent is capable of forming a solid electrolyte interface layer;wherein the electrochemical intercalation step applying a potential difference to the cell so as to intercalate lithium ions into the negative electrode to provide an intercalated electrode; then(ii) an exfoliation step comprising contacting the intercalated electrode with a protic solvent to produce 1T-transition metal dichalcogenide few-layer nanosheets and/or monolayer nanosheets.2. The method of claim 1 , wherein the counter electrode comprises a precious metal.3. The method of claim 1 , wherein the counter electrode is platinum.4. The method of claim 1 , wherein the electrolyte comprises a solvent which is selected from dimethyl carbonate claim 1 , ethylene carbonate claim 1 , propylene carbonate claim 1 , and mixtures thereof.5. The method of claim 1 , wherein the electrolyte is a lithium salt in a mixture of dimethyl carbonate ...

HYDROXYAPATITE BASED COMPOSITION AND FILM THEREOF COMPRISING INORGANIC FULLERENE-LIKE NANOPARTICLES OR INORGANIC NANOTUBES

This invention is directed to compositions and films comprising hydroxyapatite with minute amounts of doped inorganic fullerene-like (IF) nanoparticles or doped inorganic nanotubes (INT); methods of preparation and uses thereof. 1. A composition comprising hydroxyapatite [Ca(PO)(OH))] and inorganic fullerene-like nanoparticles or inorganic nanotubes; wherein the inorganic fullerene-like nanoparticles or inorganic nanotubes is AB-chalcogenide where A is a metal or transition metal or an alloy of one metals or transition metals including at least one of the following: Mo , W , Re , Ti , Zr , Hf , Nb , Ta , Pt , Ru , Rh , In , Ga , InS , InSe , GaS , GaSe , WMo , TiW; and B (dopant) is a metal transition metal selected from the following: Si , Nb , Ta , W , Mo , Sc , Y , La , Hf , Ir , Mn , Ru , Re , Os , V , Au , Rh , Pd , Cr , Co , Fe , Ni; x is below or equal 0.003; and the chalcogenide is selected from the S , Se , Te.2. The composition according to claim 1 , wherein the inorganic fullerene-like nanoparticles or inorganic nanotubes are WS claim 1 , MoSor combination thereof.3. The composition according to claim 1 , wherein the concentration of the dopant is below or equal to 0.3 at %.4. The composition according to claim 1 , wherein the composition further comprises brushite claim 1 , portlandite or combination thereof.5. The composition according to claim 1 , wherein composition is deposited on a substrate forming a film.6. The composition according to claim 5 , wherein the substrate is a biocompatible.7. The composition according to claim 6 , wherein the substrate is a titanium claim 6 , alloys of titanium claim 6 , Co—Cr alloys claim 6 , magnesium claim 6 , stainless steel claim 6 , shape memory alloys of nickel-titanium claim 6 , silver claim 6 , tantalum claim 6 , zirconium and novel ceramics or any electrical-conductive substrate.8. The composition according to claim 7 , wherein the titanium is porous.9. The composition according to claim 1 , wherein the ...

Exfoliation process for forming semiconducting nanoflakes

The exfoliation process provides a 2-dimensional material from a 3-dimensional layered material (eg transition metal dichalcogenides, boron nitride, tranition metal oxides, TiNCl) for use in a semiconductor electronic device. The process comprises the steps of mixing powder of the layered material in a water-surfactant (eg sodium cholate) solution to provide a mixture; applying energy, for example ultrasound, to the mixture; and applying a force, for example centrifugal force, to the mixture. The resultant mixture can be coated onto a substrate by dip-coating, spray-coating or Langmuir-Blodgett deposition techniques to form thin film layers. The invention provides a fast, simple and high yielding process for separating multilayered transition metal dichalcogenides, in particular molybdenum disulphide, into individual 2-dimensional layers or flakes which do not re-aggregate, without utilising hazardous solvents or a lithium intercalation process.

Sales de molibdatos dinucleares azufrados de imidazolio como aditivos lubricantes.

La presente invención se refiere a un compuesto de la Fórmula I: (ver Fórmula) y una composición lubricante que lo contiene y un método para preparar el mismo. En la Fórmula I, R1-R5 y R6-R10 se seleccionan independientemente del grupo que consiste en hidrógeno, grupos hidrocarbilo y grupos hidrocarbilo que contienen heteroátomos, de manera que el total de átomos de carbono de Q1 y Q2 es de 6 a 166 átomos de carbono y el anión de molibdato (Y) es un dianión azufrado dinuclear seleccionado del grupo que consiste en [MO2S8O2]2-, [MO2S9O]2-, y [MO2S10]2.

Method for producing dispersions of nanosheets

본 발명은 삽입된 층상 물질을 극성 비양자성 용매와 접촉시켜 나노시트의 용액을 제조하는 단계를 포함하는 나노시트의 용액을 제조하는 방법에 있어서, 삽입된 층상 물질은 전이 금속 디칼코게니드, 전이 금속 모노칼코게니드, 전이 금속 트리칼코게니드, 전이 금속 옥사이드, 금속 할라이드, 옥시칼코게니드, 옥시닉타이드, 전이 금속의 옥시할라이드, 트리옥사이드, 페로프스카이트, 니오베이트, 루테네이트, 층상 III-VI 반도체, 흑린 및 V-VI 층상 화합물로 이루어진 군으로부터 선택된 층상 물질로부터 제조되는 방법을 제공한다. 본 발명은 나노시트의 용액 및 나노시트로부터 형성된 도금 물질을 제공하기도 한다. The present invention provides a method for preparing a solution of a nanosheet comprising the step of preparing a solution of a nanosheet by contacting an intercalated layered material with a polar aprotic solvent, wherein the intercalated layered material is a transition metal dichalcogenide, a transition metal Monochalcogenides, transition metal trichalcogenides, transition metal oxides, metal halides, oxychalcogenides, oxynictides, oxyhalides of transition metals, trioxides, perovskites, niobates, lutenates, lamellar III -VI semiconductors, black phosphorus and V-VI layered compounds are provided. The present invention also provides a solution of nanosheets and a plating material formed from the nanosheets.

Syngas Direct Methanation Catalyst and Its Preparation Method

본 발명은 합성가스를 메탄화하기 위한 촉매 및 이의 제조방법에 관한 것으로, 본 발명에 따른 합성가스 직접 메탄화 촉매 제조방법은 고압 조건에서 제조된 MoS 2 를 기초로 하는 직접 메탄화 촉매 제조방법에 있어서, 전구체를 분말로 분쇄하는 분쇄단계; 상기 분쇄된 전구체 분말에 압력을 가한 후 다시 분쇄하는 재분쇄단계; 상기 재분쇄된 시료와 황성분 및 용매를 혼합하는 혼합단계; 상기 혼합단계에서 혼합된 재료를 15bar 이상의 H 2 가스 분위기 하에서 반응시키는 반응단계; 및 반응하여 제조된 촉매를 활성화시키는 활성화 단계;를 포함하여 이루어지는 것을 특징으로 한다. 상기와 같은 방법을 통해 제조되는 본 발명에 따른 직접 메탄화 촉매는 분산성 증가, 비표면적 증가, 높은 반응 활성, 피독 저항성, 반응 내구성을 나타내며, 그에 따라 합성가스의 직접 메탄화 효율을 향상시킬 수 있다. 또한 메탄화 공정 전단에 산성가스 제거 장치와 수성가스 반응기를 별도로 설치할 필요가 없어 공정의 설치비와 운영비가 30% 이상 절감될 수 있다. The present invention relates to a catalyst for methanation of a synthesis gas and a method for preparing the same, the method for preparing a synthesis gas direct methanation catalyst according to the present invention is directed to a method for producing a direct methanation catalyst based on MoS 2 prepared under high pressure conditions. In the, grinding step of grinding the precursor into a powder; A regrinding step of applying a pressure to the pulverized precursor powder and then pulverizing again; A mixing step of mixing the regrind sample with a sulfur component and a solvent; A reaction step of reacting the material mixed in the mixing step in an H 2 gas atmosphere of 15 bar or more; And an activation step of activating the catalyst prepared by the reaction. The direct methanolization catalyst according to the present invention produced through the above method exhibits increased dispersibility, increased specific surface area, high reaction activity, poisoning resistance and reaction durability, thereby improving the direct methanation efficiency of the synthesis gas have. In addition, there is no need to separately install an acid gas removing unit and a water gas reactor at the upstream of the methanation process, so that the installation and operating costs of the process can be reduced by 30% or more.

A kind of lower concentration NH containing Mo 4the recycling treatment system of Cl waste water and method thereof

一种含Mo的低浓度NH 4 Cl废水的资源化处理系统，该系统包括第一pH调节池、疏水气体膜组件、硫化沉淀池、过滤器、第一套双极膜装置、第二pH调节池、第二套双极膜装置；第一pH调节池出水口与疏水气体膜组件的进水口相连，疏水气体膜组件的氨吸收液出口与第一套双极膜装置相连，脱氨废水出口与硫化沉淀池的进水口相连，硫化沉淀池的出水口连接第二pH调节池，第二pH调节池出水口与过滤器的进水口相连，过滤器出水口与第二套双极膜装置相连；本发明主要解决传统含Mo氯化铵废水处理工艺的设备材质要求高、药剂和能量消耗大及副盐产量大等缺点，该工艺不仅能实现废水中99%以上的Mo、氨氮和Cl - 的资源化回收或循环利用，而且可以使出水稳定达标排放或回用，具有消耗少、运行成本低和废水零排放等优点。

Polyphosphazene microspheres are the preparation method of the molybdenum disulfide composite material of carbon source

一种聚磷腈微球为碳源的二硫化钼复合材料的制备方法，六氯环三磷腈(HCCP)和4,4'‑二羟基二苯砜(BPS)，在超声作用下通过一步沉淀缩聚法得到聚磷腈(PZs)纳米微球。并通过水热合成法在聚磷腈(PZs)纳米微球表面原位生长一层二硫化钼纳米片。本发明提供一种比表面积大、颗粒均匀的聚磷腈微球为碳源的二硫化钼复合材料的制备方法。

Co9S8/MoS2Preparation method of composite material with multilevel structure

本发明涉及纳米材料技术领域，尤其涉及一种Co 9 S 8 /MoS 2 多级结构复合材料的制备方法。其包括：1）将有机配体溶于含有钼和钴的水溶液中，配制为前驱体溶液，随后对前驱体溶液进行油浴加热反应，反应后过滤得到CoMo‑MOF材料；2）将所得CoMo‑MOF材料分散于有机溶剂中配制为分散液，随后对分散液进行水热反应，反应后过滤并清洗干燥得到CoMo‑S粉末；3）将CoMo‑S粉末置于还原气氛中进行高温煅烧，即制得Co 9 S 8 /MoS 2 多级结构复合材料。本发明制备方法简洁高效，对设备需求低，容易实现产业化生产；制备稳定性高，各个步骤均能够对产物的尺寸及形貌进行有效的调控，保持其结构的稳定性及尺寸的均一性。

Process for producing a copper thiometallate or a selenometallate material

A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS 4 2− , MoSe 4 2− , WS 4 2− , WSe 4 2− and a second salt containing a cationic component comprising copper in any non-zero oxidation state are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50° C. to 150° C.

Process for cracking a hydrocarbon-containing feed

A process for treating a hydrocarbon-containing feed is provided in which a hydrocarbon-containing feed comprising at least 20 wt.% of heavy hydrocarbons is mixed with hydrogen and a catalyst to produce a hydrocarbon-containing product. The catalyst is prepared by mixing a first salt and a second salt in an aqueous mixture under anaerobic conditions at a temperature of from 15°C to 150°C, where the first salt comprises a cationic component in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Ru, La, Ce, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn, Pb, and Sb, and where the second salt comprises an anionic component selected from the group consisting of MoS 4 2- , WS 4 2- , SnS 4 4- , and SbS 4 3 .

Process for producing a thiometallate or a selenometallate material

A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS 4 2- , MoSe 4 2- , WS 4 2- , WSe 4 2- , VS 4 3- , and VSe 4 3- and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50°C to150°C.

Process for producing a thiometallate or a selenometallate material

A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS 4 2- , MoSe 4 2- , WS 4 2- , WSe 4 2- ,VS 4 3- , and VSe 4 3- and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, and Sn are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 15°C to 150°C.

PROCESS FOR THE PREPARATION OF A CATALYST BASED ON MOLYBDENE SULFIDE

La présente invention est relative à l'utilisation d'un carboxylate de molybdène choisi dans le groupe comprenant le néodécanoate, le nonanoate, le 3,5,5-triméthylhexanoate et l'iso-octadécanoate de molybdène, en tant que précurseur d'un catalyseur à base de sulfure de molybdène. L'invention est aussi relative à un procédé de préparation d'un catalyseur à base de sulfure de molybdène consistant à transformer un carboxylate de molybdène choisi dans le groupe comprenant le néodécanoate, le nonanoate, le 3,5,5-triméthylhexanoate et l'iso-octadécanoate de molybdène, en sulfure de molybdène, la transformation étant opérée en présence d'au moins un agent sulfurant et d'hydrogène.

Method for preparing a highly active, unsupported high surface-area MoS2 catalyst

The present invention is a new and simple method of decomposing ammonium tetrathiomolybdate (ATTM) in an organic solvent with added water under H 2 pressure. Model compound reactions of 4-(1-naphthylmethyl)bibenzyl (NMBB) were carried out at 350-425° C. under H 2 pressure in order to examine the activity of the Mo sulfide catalysts generated from ATTM with and without added water for C—C bond cleavage and hydrogenation of aromatic ring. The Mo sulfide catalysts generated from ATTM with added water were much more effective for C—C bond cleavage and hydrogenation of aromatic moieties at 350-425° C. than those from ATTM alone. Two-step tests revealed that the addition of water is effective for generating highly active Mo sulfide catalyst from ATTM, but water itself does not promote catalytic conversion. Removal of water after the decomposition of ATTM with added water at 350-400° C. under H 2 pressure by hot purging gives highly active Mo sulfide catalyst.

Molybdenum sulfide/carbide catalysts

The present invention provides methods of synthesizing molybdenum disulfide (MoS 2 ) and carbon-containing molybdenum disulfide (MoS 2-x C x ) catalysts that exhibit improved catalytic activity for hydrotreating reactions involving hydrodesulfurization, hydrodenitrogenation, and hydrogenation. The present invention also concerns the resulting catalysts. Furthermore, the invention concerns the promotion of these catalysts with Co, Ni, Fe, and/or Ru sulfides to create catalysts with greater activity, for hydrotreating reactions, than conventional catalysts such as cobalt molybdate on alumina support.

Process for cracking a hydrocarbon-containing feed

A process for treating a hydrocarbon-containing feed is provided in which a hydrocarbon-containing feed comprising at least 20 wt.% of heavy hydrocarbons is mixed with hydrogen and a catalyst to produce a hydrocarbon-containing product. The catalyst is prepared by mixing a first salt and a second salt in an aqueous mixture under anaerobic conditions at a temperature of from 15°C to 150°C, where the first salt comprises a cationic component in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Ru, La, Ce, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn, Pb, and Sb, and where the second salt comprises an anionic component selected from the group consisting of MoS 4 2- , WS 4 2- , SnS 4 4- , and SbS 4 3 .

Method of catalyst preparation

A novel method of preparing an unsupported molybdenum sulfide catalyst utilized in the processing of hydrocarbon feedstocks containing asphaltenes and organometallic compounds.

Preparation method of g-C3N4/MoS2 nano composite material

本发明提供了一种g‑C 3 N 4 /MoS 2 纳米复合材料的制备方法，包括如下步骤：1、制备g‑C 3 N 4 粉末，然后将g‑C 3 N 4 粉末添加到去离子水中，超声处理，制得g‑C 3 N 4 分散液；2、依次将钼酸盐、盐酸羟胺加到步骤1所得g‑C 3 N 4 分散液中，磁力搅拌5～10min，得混合液A；称取硫脲溶于去离子水中，制得硫脲溶液，用滴管逐滴滴加到混合液A中，并不断搅拌5～10min，得混合液B；将混合液B移入聚四氟乙烯为内衬的水热反应釜中反应，反应结束后，自然冷却至室温，离心收集产物，用去离子水和无水乙醇对产物进行洗涤，干燥，得到g‑C 3 N 4 /MoS 2 纳米复合材料。本发明所提供的方法，生产工艺简单易控，反应条件温和，产率高且重现性好，制备所得的g‑C 3 N 4 /MoS 2 纳米复合物粒径尺寸均匀，分散性好。

A kind of preparation method of high concentration MoS2 nanometer sheet

本发明公开一种高浓度MoS 2 纳米片的制备方法，属于生物纳米材料的技术领域。具体包括以下步骤：步骤S1：将一定量的二硫化钼多晶粉末或二硫化钼单晶块体加入到密闭的蓝盖超声瓶中，随后向蓝盖超声瓶中加入一定量的极性溶剂，形成溶液体系；步骤S2：对蓝盖超声瓶中的溶液体系进行惰性气体鼓泡处理；步骤S3：将蓝盖超声瓶放置到超声波清洗机中进行超声处理，超声处理时在超声波清洗机加入冰块造成低温环境，起到冰浴降温的效果，得到墨绿色MoS2纳米片分散液；步骤S4：墨绿色MoS 2 纳米片分散液进行分离。本发明利用溶剂与溶质之间的分散性选用超声剥离法制备高浓度MoS 2 纳米片，获得剥离率高、高稳定性、保持块体半导体性质的纳米片分散液。

Fullerene-like nanostructure, its use and its manufacturing process

High-concentration molybdenum disulfide nanometer sheet dispersion liquid, and preparation method and application thereof

本发明涉及一种高浓度二硫化钼纳米片分散液及其制备方法和应用，所述分散液的浓度为1‑20mg/mL。制备方法包括：将辉钼矿加入到有机溶剂中，超声5～30h，得到硫化钼纳米薄片分散液，离心筛选，抽滤，得到硫化钼纳米薄片；将硫化钼纳米薄片通过溶剂转移法转移至低沸点溶剂中，超声分散，得到高浓度二硫化钼纳米分散液。本发明的方法简单，环保，制备得到的硫化钼纳米片分散液的制备方法解决了现有技术生产制备出的硫化钼纳米片容易团聚，稳定性差的问题。

Fullerene-like nanostructures, their use and process for their production

本发明描述了式A 1-x -B x -硫族化物的富勒烯样(IF)纳米结构体。A是金属或过渡金属或者金属和/或过渡金属的合金，B是不同于A的金属或过渡金属B并且x≤0.3。本发明还描述了所述结构体的制造方法和所述结构体的用以改变A-硫族化物的电子特性的应用。

Method for obtaining nanostructured material for anodes of metal-ion batteries

FIELD: nanotechnology and electronics. SUBSTANCE: invention relates to the field of electronics and nanotechnology, and in particular to a method for producing nanostructured material for anodes of alkaline metal-ion batteries, in particular for lithium and sodium-ion batteries. The invention makes it possible to obtain nanostructured porous sulfides of molybdenum or vanadium, or their hybrids (VS 2 /graphene material or МоS 2 /graphene material), characterized by a high capacity for lithium-ion and sodium-ion batteries, which can also find application, for example, in catalysis, in sensor devices and other fields of technology. The proposed method makes it possible to simplify the production of these materials by reducing the stages, reducing the temperature and reducing the time of thermal decomposition to seconds, by thermal shock decomposition of aerogels of the starting materials or their mixture with graphite oxide at 400-700°C for 10-20 seconds in an argon atmosphere. EFFECT: invention improves capacitive characteristics of lithium and sodium-ion batteries through the use of nanostructured material obtained by the claimed method. 3 cl, 9 dwg, 5 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК H01M 4/36 H01M 4/58 C01G 39/06 B82Y 40/00 (11) (13) 2 751 131 C1 (2006.01) (2010.01) (2006.01) (2011.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК H01M 4/36 (2021.02); H01M 4/58 (2021.02); C01G 39/06 (2021.02); B82Y 40/00 (2021.02) (21)(22) Заявка: 2020136317, 03.11.2020 (24) Дата начала отсчета срока действия патента: Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 03.11.2020 (45) Опубликовано: 08.07.2021 Бюл. № 19 2 7 5 1 1 3 1 R U (56) Список документов, цитированных в отчете о поиске: SRIVASTAVA S.K. et al. 2016, Thermally fabricated MoS2-graphene hybrids as high performance anode in lithium ion battery, Materials Chemistry and Physics, 183, 383-391. RU 2495752 C1, 10.10.2013. CN 111564609 A, 21.08.2020. CN ...