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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 8218. Отображено 100.
16-02-2012 дата публикации

Method to fabricate thin metal via interconnects on copper wires in mram devices

Номер: US20120040531A1
Автор: Guomin Mao
Принадлежит: MagIC Technologies Inc

A scheme for forming a thin metal interconnect is disclosed that minimizes etch residues and provides a wet clean treatment for via openings. A single layer interlayer dielectric (ILD), BARC, and photoresist layer are successively formed on a substrate having a copper layer that is coplanar with a dielectric layer. In one embodiment, the ILD is silicon nitride with 100 to 600 Angstrom thickness. After a via opening is formed in a photoresist layer above the copper layer, a first RIE process including BARC main etch and BARC over etch steps is performed. Then a second RIE step transfers the opening through the ILD to uncover the copper layer. Photoresist and BARC are stripped with oxygen plasma and a low DC bias. Wet cleaning may involve a first ST250 treatment, ultrasonic water treatment, and then a third ST250 treatment. A bottom electrode layer may be deposited in the via opening.

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Номер записи: 1
15-03-2012 дата публикации

Method for cutting tempered glass, preparatory structure used in cutting tempered glass, and glass block cut from tempered glass substrate

Номер: US20120064306A1
Автор: Hen-Ta Kang, Jeng-Jye Hung, Yung-Lin Chen
Принадлежит: Wintek Corp, Wintek Technology HK Ltd

A method for cutting a tempered glass includes the following steps. First, a shielding layer is formed on a part of a surface of a glass substrate, and a predetermined cutting path passes through the part of the surface. Then, a glass substrate is given an ion-exchange strengthening treatment, and the part of the surface covered by the shielding layer substantially does not undergo ion-exchange. Finally, the glass substrate is cut along the predetermined cutting path.

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Номер записи: 2
17-05-2012 дата публикации

Surface modified glass fibers

Номер: US20120121975A1
Автор: George C. Zguris, Mohan Rajaram
Принадлежит: Hollingsworth and Vose Co

Compositions including glass fibers with a high surface atomic percentage of oxygen bonded to silicon wherein the fibers form at least part of a battery separator or other battery component.

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Номер записи: 3
05-07-2012 дата публикации

Field effect transistor (fet) and method of forming the fet without damaging the wafer surface

Номер: US20120168834A1
Автор: Bruce B. Doris, Kangguo Cheng, Yu Zhu
Принадлежит: International Business Machines Corp

Disclosed are a field effect transistor structure and a method of forming the structure. A gate stack is formed on the wafer above a designated channel region. Spacer material is deposited and anisotropically etched until just prior to exposing any horizontal surfaces of the wafer or gate stack, thereby leaving relatively thin horizontal portions of spacer material on the wafer surface and relatively thick vertical portions of spacer material on the gate sidewalls. The remaining spacer material is selectively and isotropically etched just until the horizontal portions of spacer material are completely removed, thereby leaving only the vertical portions of the spacer material on the gate sidewalls. This selective isotropic etch removes the horizontal portions of spacer material without damaging the wafer surface. Raised epitaxial source/drain regions can be formed on the undamaged wafer surface adjacent to the gate sidewall spacers in order to tailor source/drain resistance values.

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Номер записи: 4
26-07-2012 дата публикации

Optical fiber, optical fiber ribbon and optical fiber cable

Номер: US20120189257A1
Автор: Hiroki Tanaka, Minoru Kasahara, Minoru Saito, Yasuo Nakajima
Принадлежит: Furukawa Electric Co Ltd

According to the present invention, there is provided an optical fiber, an optical fiber ribbon and an optical fiber cable that reduce both the increase in transmission loss and the decrease in strength. According to an embodiment of the present invention, there is provided an optical fiber in which an outer circumferential surface of an optical fiber is coated with a primary coating layer. In the optical fiber, the primary coating layer includes a ultraviolet curable resin, and the ultraviolet curable resin contains 0.05 or more and 0.75 or less parts by weight of a reactive silane coupling agent and 0.05 or more and 0.75 or less parts by weight of an unreactive silane coupling agent.

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Номер записи: 5
02-08-2012 дата публикации

Enhanced chemical strengthening glass for portable electronic devices

Номер: US20120194974A1
Автор: Christopher Prest, Douglas Weber, Stephen Paul Zadesky
Принадлежит: Apple Inc

Apparatus, systems and methods for improving strength of a thin glass member for an electronic device are disclosed. In one embodiment, the glass member can have improved strength characteristics in accordance with a predetermined stress profile. The predetermined stress profile can be formed through multiple stages of chemical strengthening. The stages can, for example, have a first ion exchange stage where larger ions are exchanged into the glass member, and a second ion exchange stage where some of the larger ions are exchanged out from the glass member. In one embodiment, the glass member can pertain to a glass cover for a housing for an electronic device. The glass cover can be provided over or integrated with a display.

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Номер записи: 6
23-08-2012 дата публикации

Method of manufacturing a glass substrate for use as a cover glass for a mobile electronic device, glass substrate for use as a cover glass for a mobile electronic device, and mobile electronic device

Номер: US20120214004A1
Автор: Kazuaki Hashimoto, Tetsuo Takano
Принадлежит: Hoya Corp

A glass substrate manufacturing method of this invention includes a first chemical strengthening process for chemically strengthening a plate-like glass member by ion exchange, a cutting process for cutting the plate-like glass member into small pieces after the first chemical strengthening process, thereby obtaining a plurality of glass substrates, and a second chemical strengthening process for chemically strengthening the glass substrates by ion exchange after the cutting process.

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Номер записи: 7
30-08-2012 дата публикации

Local strengthening of glass by ion exchange

Номер: US20120216570A1
Автор: Alexander Mikhailovich Streltsov, Anatoli Anatolyevich Abramov, Jonathan E. Walter, Lisa Anne Moore, Sergio Tsuda, Sinue Gomez
Принадлежит: Corning Inc

This disclosure describes a process for strengthening, by ion-exchange, the edges of an article separated from a large glass sheet after the sheet has been ion-exchanged to strengthen by exposing only the one or a plurality of the edges of the separated article to an ion-exchange medium (for example without limitation, a salt, paste, frit, glass) while the glass surface is maintained at temperatures less than 200° C.

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Номер записи: 8
30-08-2012 дата публикации

Silicon carbide powder composition and method of producing silicon carbide molded product using same

Номер: US20120216708A1
Автор: Yoshitaka Aoki
Принадлежит: Shin Etsu Chemical Co Ltd

A silicon carbide powder composition comprising a silicon carbide powder obtained by thermally decomposing a silicone cured product within a non-oxidizing atmosphere and an organic binder. The composition can be sintered to form a silicon carbide molded product having a complex shape even without the inclusion of a sintering assistant.

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Номер записи: 9
08-11-2012 дата публикации

Method of dehydrating and sintering porous preform for optical fiber and dehydration-sintering furnace

Номер: US20120279258A1
Автор: Mitsuhiro Kawasaki, Seiichi Shinada, Yoshinori Ishida
Принадлежит: Furukawa Electric Co Ltd

A dehydration-sintering furnace includes a muffle tube that accommodates therein the porous preform, a heater that heats the porous preform from outside of the muffle tube, a furnace body that accommodates the heater at an outer periphery of the muffle tube. When a gas required for dehydrating and sintering the porous preform is supplied in the muffle tube, and a pressure in the muffle tube is measured, an average value of the pressure in the muffle tube P0 and a standard deviation of the pressure in the muffle tube σ0 are controlled to satisfy a relation P0−3×σ0>0.

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Номер записи: 10
07-02-2013 дата публикации

Display cover glass and display

Номер: US20130034670A1
Автор: Kazuaki Hashimoto, Kinobu Osakabe, Youichi Hachitani
Принадлежит: Hoya Corp

Disclosed are a thin-sheet cover glass that is high in quality and has high mechanical strength, and a display equipped with the aforementioned cover glass. The cover glass is used to cover the image display unit of a display and to make images displayed by the aforementioned image display unit opaque. The cover glass is formed from a glass that comprises, in an oxide base conversion indicated in mol %, 60 to 75% SiO 2 , 0 to 12% Al 2 O 3 (provided that the total content of SiO 2 and Al 2 O 3 is 68% or more), 0 to 10% B 2 O 3 , 5 to 26% Li 2 O and Na 2 O in total, 0 to 8% K 2 O (provided that the total content of Li 2 O, Na 2 O, and K 2 O is 26% or less), 0 to 18% MgO, CaO, SrO, BaO in total, and ZnO, and 0 to 5% ZrO 2 , TiO 2 , and HfO 2 in total, as well as a total of 0.1 to 3.5 mass % of an Sn oxide and a Ce oxide relative to the total mass, wherein (Sn oxide content/(Sn oxide content+Ce oxide content)) is 0.01 to 0.99, and the content of an Sb oxide is 0 to 0.1%; and has a plate thickness of no more than 1.0 mm.

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Номер записи: 11
21-02-2013 дата публикации

Manufacturing method of a glass blank for magnetic disk and manufacturing method of a glass substrate for magnetic disk

Номер: US20130042649A1
Автор: Akira Murakami, Hideki Isono, Shinji Eda
Принадлежит: Hoya Corp

A manufacturing method of a glass blank for magnetic disk including a pair of principal surfaces, the method including: dropping process for dropping a lump of molten glass; pressing process for forming a sheet glass material by sandwiching simultaneously the lump from both sides of the dropping path of the lump with surfaces of the pair of dies facing together, and performing press forming to the lump; and temperature adjusting process for adjusting temperature of the lump before the pressing process such that viscosity variation of the lump is reduced with respect to positions over the entirety of the lump in the pressing process.

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Номер записи: 12
28-02-2013 дата публикации

UVLED Apparatus for Curing Glass-Fiber Coatings

Номер: US20130052364A1
Автор: Bob J. Overton, Johannes Antoon Hartsuiker, Xavier Meersseman
Принадлежит: Draka Comteq BV

A UVLED apparatus and method provide efficient curing of an optical-fiber coating onto a drawn glass fiber. The apparatus and method employ one or more UVLEDs that emit electromagnetic radiation into a curing space. An incompletely cured optical-fiber coating, which is formed upon a glass fiber, absorbs emitted and reflected electromagnetic radiation to effect improved curing.

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Номер записи: 13
28-03-2013 дата публикации

High temperature refractory coatings for ceramic substrates

Номер: US20130079214A1
Автор: David C. Jarmon, Owen B. Donahue, JR., Tania Bhatia Kashyap, Wayde R. Schmidt, Xia Tang
Принадлежит: United Technologies Corp

A method of manufacturing a composite article includes pyrolyzing a preceramic polymer to form a non-oxide ceramic matrix and a byproduct, and reacting the refractory material with the byproduct to form a refractory phase within the non-oxide ceramic matrix.

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Номер записи: 14
18-04-2013 дата публикации

Method for fabricating a ceramic material

Номер: US20130096217A1
Автор: Paul Sheedy, Tania Bhatia Kashyap, Wayde R. Schmidt
Принадлежит: Individual

A method for fabricating a ceramic material includes impregnating a porous structure with a mixture that includes a preceramic polymer and a filler. The filler includes at least one free metal. The preceramic polymer material is then rigidized to form a green body. The green body is then thermally treated to convert the rigidized preceramic polymer material into a ceramic matrix located within pores of the porous structure. The same thermal treatment or a second, further thermal treatment is used to cause the at least one free metal to move to internal porosity defined by the ceramic matrix or pores of the porous structure.

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Номер записи: 15
16-05-2013 дата публикации

METHOD AND APPARATUS FOR MANUFACTURING OPTICAL FIBER

Номер: US20130118208A1
Автор: OKADA Kenji
Принадлежит: FUJIKURA LTD.

This optical fiber manufacturing method includes: forming a bare optical fiber by drawing an optical fiber preform; forming an intermediate optical fiber by providing a coating layer, which is formed of resin, on the outer periphery of the bare optical fiber; performing primary curing of the coating layer which forms the intermediate optical fiber; pressing the outer periphery of the intermediate optical fiber; and performing secondary curing of the pressed coating layer of the intermediate optical fiber. 1. An optical fiber manufacturing method comprising:forming a bare optical fiber by drawing an optical fiber preform;forming an intermediate optical fiber by providing a coating layer on an outer periphery of the bare optical fiber, the coating layer being formed of resin;performing primary curing of the coating layer which forms the intermediate optical fiber;pressing an outer periphery of the intermediate optical fiber; andperforming secondary curing of the pressed coating layer of the intermediate optical fiber.2. The optical fiber manufacturing method according to claim 1 , wherein claim 1 ,when pressing the outer periphery of the intermediate optical fiber, the intermediate optical fiber is spun by making at least a pair of spinning rollers perform translational movement or rocking movement in a state where the pair of spinning rollers are in contact with part of the outer periphery of the intermediate optical fiber through the primary-cured coating layer.3. The optical fiber manufacturing method according to claim 1 , wherein claim 1 ,when pressing the outer periphery of the intermediate optical fiber, the intermediate optical fiber is gripped and drawn using a capstan wheel and a capstan belt.4. The optical fiber manufacturing method according to claim 1 , wherein claim 1 ,when pressing the outer periphery of the intermediate optical fiber, the intermediate optical fiber is spun by making at least a pair of spinning rollers perform translational movement or ...

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Номер записи: 16
16-05-2013 дата публикации

ACID STRENGTHENING OF GLASS

Номер: US20130122306A1
Автор: Bookbinder Dana Craig, Fiacco Richard Michael, Gross Timothy Michael
Принадлежит:

Disclosed herein are methods for strengthening glass articles having strength-limiting surface flaws, together with strengthened glass articles produced by such methods, and electronic devices incorporating the strengthened glass articles. The methods generally involve contacting the glass articles with a substantially fluoride-free aqueous acidic treating medium for a time at least sufficient to increase the rupture failure points of the glass articles. 1. A method , comprising: strength-limiting surface flaws having a first shape; and', 'a first rupture failure point; and, 'providing a glass article, comprisingcontacting the glass article with a substantially fluoride-free aqueous acidic treating medium having a pH of less than or equal to about 3 to produce an acid-treated strengthened glass article comprising a second rupture failure point,wherein at least a subset of the strength-limiting surface flaws of the acid-treated strengthened glass article have a second shape, andwherein the contacting occurs for a time at least sufficient to render the second rupture failure point higher than the first rupture failure point.2. The method of claim 1 , further comprising rinsing the acid-treated strengthened glass article to remove the substantially fluoride-free aqueous acidic treating medium therefrom.3. The method of claim 1 , further comprising incorporating the acid-treated strengthened glass article in an electronic device.4. The method of claim 1 , wherein the glass article comprises a silicate glass claim 1 , borosilicate glass claim 1 , aluminosilicate glass claim 1 , or boroaluminosilicate glass claim 1 , which optionally comprises an alkali or alkaline earth modifier.5. The method of claim 1 , wherein the substantially fluoride-free aqueous acidic treating medium is fluoride free.6. The method of claim 1 , wherein the substantially fluoride-free aqueous acidic treating medium comprises about 0.001 weight percent to about 0.095 weight percent fluoride ions.7. ...

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Номер записи: 17
16-05-2013 дата публикации

Semiconductor process for removing oxide layer

Номер: US20130122684A1
Автор: Chin-Cheng Chien, Ted Ming-Lang Guo, Teng-Chun Hsuan
Принадлежит: United Microelectronics Corp

A semiconductor process for removing oxide layers comprises the steps of providing a substrate having an isolation structure and a pad oxide layer, performing a dry cleaning process and a wet cleaning process to remove said pad oxide layer, forming a sacrificial oxide layer on said substrate, and performing an ion implantation process to form doped well regions on both sides of the isolation structure.

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Номер записи: 18
23-05-2013 дата публикации

3-d glass enclosures for electronic devices

Номер: US20130128433A1
Автор: David Lathrop Morse, Thierry Luc Alain Dannoux
Принадлежит: Corning Inc

A 3-D glass enclosure comprises a generally planar glass base member, an encircling glass side wall member connected to the base member, and a generally planar glass cover member connected to the side wall member to form a unitary glass enclosure, the base, sidewall and cover members being made by reforming softened glass sheet preforms and subjecting the reformed members to ion-exchange strengthening, thus providing strong transparent enclosures for electronic devices such as tablet computers, cellphones, media players and televisions.

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Номер записи: 19
06-06-2013 дата публикации

System And Method For Laser-Based, Non-Evaporative Repair Of Damage Sites In The Surfaces Of Fused Silica Optics

Номер: US20130139551A1
Автор: ADAMS John J., BOLOURCHI Masoud, BUDE Jeffrey D., GUSS Gabriel M., JARBOE Jeffery A., Matthews Manyalibo J., NOSTRAND Michael C., WEGNER Paul J.
Принадлежит: Lawrence Livermore National Security, LLC

A method for repairing a damage site on a surface of an optical material is disclosed. The method may involve focusing an Infrared (IR) laser beam having a predetermined wavelength, with a predetermined beam power, to a predetermined full width (“F/W”) 1/ediameter spot on the damage site. The focused IR laser beam is maintained on the damage site for a predetermined exposure period corresponding to a predetermined acceptable level of downstream intensification. The focused IR laser beam heats the damage site to a predetermined peak temperature, which melts and reflows material at the damage site of the optical material to create a mitigated site. 1. A method of repairing a damage site on a surface of an optical material comprising:{'sup': '2', 'focusing an Infrared (IR) laser beam, of a predetermined wavelength, with a predetermined beam power, to a predetermined full width (“FM/”) 1/ediameter spot on the damage site;'}maintaining the focused IR laser beam on the damage site for a predetermined exposure period corresponding to a predetermined acceptable level of downstream intensification; andfurther using the focused IR laser beam to heat the damage site to a predetermined peak temperature, which melts and reflows material at the damage site of the optical material to create a mitigated site.2. The method of claim 1 , wherein the material at the damage site of the optical material is melted and reflowed without causing evaporation of the material.3. The method of claim 1 , further comprising controlling the beam power of the IR laser beam to provide:a first, predetermined, continuous level of beam power for a first time duration; andsubsequently ramping down the beam power to a reduced, second beam power level over a second time duration.4. The method of claim 1 , further comprising controlling the beam power of the IR laser beam to provide:a first, predetermined, continuous level of beam power for a first time duration; andsubsequently ramping down the beam power ...

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Номер записи: 20
06-06-2013 дата публикации

METHOD FOR MANUFACTURING TEMPERED-GLASS PANELS FOR ELECTRONIC DEVICES

Номер: US20130139552A1
Автор: KIM Hakyeol
Принадлежит: SAMSUNG ELECTRONICS CO. LTD.

A method for manufacturing tempered-glass panels for electronic devices is provided. The method includes pre-processing an original glass substrate so as to reduce weak portions that are formed in the original glass substrate when the original glass substrate is first tempered and then processed tempering the pre-processed original glass substrate and cutting the tempered pre-processed original glass substrate to produce a number of tempered-glass panels. The method can produce the tempered-glass panels from the original glass substrate, maintaining a certain level of production efficiency. 1. A method for manufacturing tempered-glass panels for electronic devices , the method comprising:pre-processing an original glass substrate so as to reduce weak portions that are formed in the original glass substrate when the original glass substrate is first tempered and then processed;tempering the pre-processed original glass substrate; andcutting the tempered pre-processed original glass substrate to produce a number of tempered-glass panels.2. The method of claim 1 , wherein the weak portions comprise:at least one of holes, edges, and straight sections equal to or less than a predetermined length.3. The method of claim 2 , wherein the pre-processing of the original glass substrate comprises at least one of the following:forming the holes in the original glass substrate;processing the original glass substrate so that the edges can be exposed to the outside; andprocessing the original glass substrate so that the straight sections can be exposed to the outside.4. The method of claim 3 , wherein the pre-processing of the original glass substrate further comprises:curving or chamfering the edges.5. The method of claim 2 , wherein the tempering the pre-processed original glass substrate comprises:tempering the at least one of holes, the edges, and the straight sections, which are exposed to the outside.6. The method of claim 1 , further comprising:forming decorations in the pre ...

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Номер записи: 21
27-06-2013 дата публикации

APPLIANCE FASCIA AND MOUNTING THEREFORE

Номер: US20130164483A1
Автор: Cites Jeffrey Scott, Rosenblum Steven S., Wildeman George Francis
Принадлежит:

A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers. 137-. (canceled)38. An appliance with a thin glass fascia mounted on an outer surface of the appliance , the thin glass fascia comprising:a chemically-strengthened glass sheet having a thickness less than 2.0 mm and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than about 300 MPa and the extends to a depth of layer of at least 20 μm.39. The appliance according to claim 38 , wherein the compressive stress (CS) at a surface of the glass sheet is greater than about 400 MPa.40. The appliance according to claim 39 , wherein the compressive stress (CS) at a surface of the glass sheet is greater than about 600 MPa.41. The appliance according to claim 38 , wherein a composition of the glass sheet includes at least one of (a) 6 wt. % aluminum oxide; and (b) one or more alkaline earth oxides claim 38 , such that a content of alkaline earth oxides is at least 5 wt. %.42. The appliance according to claim 38 , wherein the glass sheet has an area greater than 1 m.43. The appliance according to claim 38 , wherein at least a portion of the glass sheet is curved.44. The appliance according to claim 38 , wherein the glass sheet further comprises a substantially planar or curved central portion having opposing ...

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Номер записи: 22
04-07-2013 дата публикации

STRENGTHENED GLASS BLOCK, TOUCH-SENSITIVE DISPLAY DEVICE AND OLED DISPLAY DEVICE

Номер: US20130169591A1
Автор: Chen Chien-Chung, Hung Jeng-Jye, Kang Hen-Ta
Принадлежит: WINTEK CORPORARTION

A strengthened glass block cut from a mother glass substrate is provided. The mother glass substrate is given a preliminary chemically strengthening treatment, the strengthened glass block has a preliminary strengthened surface area and a newly-born surface area, and the newly-born surface area is formed as a result of a machining or material removing treatment. A chemically strengthened layer formed as a result of a secondary chemically strengthening treatment is formed in at least the newly-born surface area. 1. A strengthened glass block cut from a mother glass substrate given a preliminary chemically strengthening treatment , the strengthened glass block having a preliminary strengthened surface area and a newly-born surface area , and the newly-born surface area being formed as a result of a machining or material removing treatment , wherein a chemically strengthened layer formed as a result of a secondary chemically strengthening treatment is formed in at least the newly-born surface area.2. The strengthened glass block as claimed in claim 1 , wherein the preliminary strengthened surface area is larger than the newly-born surface area.3. The strengthened glass block as claimed in claim 1 , wherein the machining or material removing treatment comprises at least one of cutting claim 1 , edging claim 1 , drilling claim 1 , chamfering claim 1 , and polishing.4. The strengthened glass block as claimed in claim 3 , wherein a plurality of etched notch structures having an arc-shaped or a tooth-shaped profile are formed in the newly-born surface area.5. The strengthened glass block as claimed in claim 1 , wherein a chemically strengthened layer is formed as a result of the preliminary chemically strengthening treatment and exists only in the preliminary strengthened surface area.6. The strengthened glass block as claimed in claim 1 , further comprising:a shielding layer formed in at least part of the preliminary strengthened surface area.7. The strengthened glass ...

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Номер записи: 23
25-07-2013 дата публикации

LITHIUM ALUMINOSILICATE GLASS WITH HIGH MODULUS OF ELASTICITY, AND METHOD FOR PRODUCING SAME

Номер: US20130186140A1
Автор: Alkemper Jochen, Beier Wolfram, Brix Peter
Принадлежит: SCHOTT AG

A lithium aluminosilicate glass and a method for producing such lithium aluminosilicate glass are provided. The glass has a composition, in mol %, of: SiO60-70; AlO10-13; BO0.0-0.9; LiO 9.6-11.6; NaO 8.2-less than 10; KO 0.0-0.7; MgO 0.0-0.2; CaO 0.2-2.3; ZnO 0.0-0.4; ZrO1.3-2.6; PO0.0-0.5; FeO0.003-0.100; SnO0.0-0.3; and CeO0.004-0.200. Further, the composition complies with the following relations and conditions: (LiO+AlO)/(NaO+KO) greater than 2; LiO/(LiO+NaO+KO) greater than 0.47 and less than 0.70; CaO+FeO+ZnO+PO+BO+CeOgreater that 0.8 and less than 3, where at least four out of the six oxides are included. The glass exhibits a modulus of elasticity of at least 82 GPa and has a glass transition point below 540° C. and/or a working point below 1150° C. 114-. (canceled)16. The lithium aluminosilicate glass as claimed in claim 15 , wherein said lithium aluminosilicate glass is suitable for shaping by a float process.17. The lithium aluminosilicate glass as claimed in claim 16 , wherein said lithium aluminosilicate glass can be chemically and/or thermally tempered so that it has a flexural strength of at least 550 N/mm claim 16 , as measured with a double ring method according to EN 1288-5.18. The lithium aluminosilicate glass as claimed in claim 15 , further comprising a linear coefficient of thermal expansion αbetween 8.0*10Kand 9.0*10K.19. The lithium aluminosilicate glass as claimed in claim 15 , wherein at least two components from a group of refining components consisting of FeO claim 15 , CeO claim 15 , and SnOtogether account for at least 0.1 mol % of said composition.20. The lithium aluminosilicate glass as claimed in claim 19 , wherein said lithium aluminosilicate glass is free of TiOand/or MgO and/or AsOand/or SbOand/or VOand/or BiOand/or PbO claim 19 , except for technically or economically unavoidable residues in glass raw materials.21. The lithium aluminosilicate glass as claimed in claim 15 , wherein SnOis present in a content of not more than 0.5 wt ...

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Номер записи: 24
15-08-2013 дата публикации

GLASS FOR CHEMICAL TEMPERING, CHEMICALLY TEMPERED GLASS, AND GLASS PLATE FOR DISPLAY DEVICE

Номер: US20130209773A1
Автор: Akiba Shusaku, Endo Jun, Nakashima Tetsuya, Ono Kazutaka
Принадлежит: Asahi Glass Company, Limited

To provide glass to be used for chemically tempered glass, of which the strength is less likely to be reduced even when indentations are formed thereon. Glass for chemical tempering, which comprises, as represented by mole percentage based on oxides, from 62 to 68% of SiO, from 6 to 12% of AlO, from 7 to 13% of MgO, from 9 to 17% of NaO, and from 0 to 7% of KO, wherein the difference obtained by subtracting the content of AlOfrom the total content of NaO and KO is less than 10%, and when ZrOis contained, its content is at most 0.8%. Chemically tempered glass obtained by chemically tempering such glass for chemical tempering. Such chemically tempered glass has a compressive stress layer formed on the glass surface, which has a thickness of at least 30 μm and a surface compressive stress of at least 550 MPa. 1. Glass for chemical tempering , which comprises , as represented by mole percentage based on oxides , from 62 to 68% of SiO , from 6 to 12% of AlO , from 7 to 13% of MgO , from 9 to 17% of NaO , and from 0 to 7% of KO , wherein the difference obtained by subtracting the content of AlOfrom the total content of NaO and KO is less than 10% , and when ZrOis contained , its content is at most 0.8%.2. The glass for chemical tempering according to claim 1 , which contains from 64 to 67% of SiO claim 1 , and from 6 to 7.5% of AlO claim 1 , wherein the total content of SiOand AlOis from 69 to 73%.3. Glass for chemical tempering claim 1 , which comprises claim 1 , as represented by mole percentage based on oxides claim 1 , from 62 to 66% of SiO claim 1 , from 6 to 12% of AlO claim 1 , from 7 to 13% of MgO claim 1 , from 9 to 17% of NaO claim 1 , and from 0 to 7% of KO claim 1 , wherein the difference obtained by subtracting the content of AlOfrom the total content of NaO and KO is less than 10% claim 1 , and when ZrOis contained claim 1 , its content is at most 0.8%.4. The glass for chemical tempering according to claim 3 , wherein the total content of SiOand AlOis more ...

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Номер записи: 25
26-09-2013 дата публикации

METHODS OF FORMING HIGH-DENSITY ARRAYS OF HOLES IN GLASS

Номер: US20130247615A1
Автор: Boek Heather Debra, Burket Robert Carl, Harvey Daniel Ralph, Streltsov Alexander Mikhailovich
Принадлежит:

A method of fabricating a high-density array of holes in glass is provided, comprising providing a glass piece having a front surface, then irradiating the front surface of the glass piece with a UV laser beam focused to a focal point within +/−100 μm of the front surface of the glass piece most desirably within +/−50 μm of the front surface. The lens focusing the laser has a numerical aperture desirably in the range of from 0.1 to 0.4, more desirably in the range of from 0.1 to 0.15 for glass thickness between 0.3 mm and 0.63 mm, even more desirably in the range of from 0.12 to 0.13, so as to produce open holes extending into the glass piece 100 from the front surface 102 of the glass piece, the holes having an diameter the in range of from 5 to 15 μm, and an aspect ratio of at least 20:1. For thinner glass, in the range of from 0.1-0.3 mm, the numerical aperture is desirably from 0.25 to 0.4, more desirably from 0.25 to 0.3, and the beam is preferably focused to within +/−30 μm of the front surface of the glass. The laser is desirable operated at a repetition rate of about 15 kHz or below. An array of holes thus produced may then be enlarged by etching. The front surface may be polished prior to etching, if desired. 1. A method of fabricating a high-density array of holes in glass , the method comprising:providing a glass piece having a front surface;irradiating the front surface of the glass piece with a UV laser beam, the beam being focused by a lens within +/−100 um of the front surface of the glass piece, the lens having a numerical aperture in the range of from 0.1 to 0.4, so as to produce open holes extending into the glass piece from the front surface of the glass piece, the holes having an diameter the in range of from 5 to 15 μm, and an aspect ratio of at least 20:1.2. The method according to wherein irradiating comprises using a laser beam with a wavelength in the range of from 200-400 nm.3. The method according to wherein irradiating comprises using a ...

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Номер записи: 26
10-10-2013 дата публикации

High durability joints between ceramic articles, and methods of making and using same

Номер: US20130266363A1
Автор: Christian Peter Deck, Christina Allyssa Back, Hesham Ezzat Khalifa
Принадлежит: General Atomics Corp

Embodiments of the present invention provide high durability joints between ceramic articles, particularly between beta-silicon carbide (β-SiC) articles, and methods of making and using the same. In one embodiment, a joint between first and second articles each comprising a ceramic polymorph comprises a matrix comprising the ceramic polymorph and extending between the first and second articles; a plurality of inclusions comprising the ceramic polymorph and being distributed throughout the matrix; and a sealing layer comprising the ceramic polymorph and being respectively disposed on the first and second articles and the matrix.

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Номер записи: 27
17-10-2013 дата публикации

STRENGTHENED GLASS ARTICLES HAVING ETCHED FEATURES AND METHODS OF FORMING THE SAME

Номер: US20130273324A1
Автор: Moll Johannes, Price James Joseph, Ruffin Alranzo Boh, Tsuda Sergio, Wagner Robert Stephen, Watkins James Joseph
Принадлежит: CORNING INCORPORATED

Strengthened glass articles having laser etched features, electronic devices, and methods of fabricating etched features in strengthened glass articles are disclosed. In one embodiment, a strengthened glass article includes a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from a first surface and a second surface, respectively, of the strengthened glass article to a depth of layer, and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress. The strengthened glass article further includes at least one etched feature formed by laser ablation within the first surface or the second surface having a depth that is less than the depth of layer and a surface roughness that is greater than a surface roughness of the first surface or second surface outside of the at least one etched feature. 1. A method of fabricating a strengthened glass article having an etched feature , the method comprising:providing a non-strengthened glass article comprising a first surface and a second surface;focusing a laser beam onto the first surface of the non-strengthened glass article to ablate material from the first surface;translating the laser beam relative to the non-strengthened glass article within a boundary defined by a desired etched feature, wherein translation of the laser beam ablates the material from the first surface at a depth to form the etched feature; and the strengthened glass article comprises a first strengthened surface layer and a second strengthened surface layer under a compressive stress and extending from the first surface and the second surface of the strengthened glass article, respectively, to a depth of layer, and a central region between the first strengthened surface layer and the second strengthened surface layer that is under tensile stress; and', 'the depth of the etched feature is less than the depth of layer such ...

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Номер записи: 28
24-10-2013 дата публикации

Transparent Glass Article that is Locally Colored in its Bulk, an an Associated Method

Номер: US20130280449A1
Автор: BOURJOT Joel, RIEZMAN Yannick Samuel
Принадлежит: SGD S.A.

An industrial decoration method in which a colored pattern () is made in the bulk of an article () made of transparent glass of composition including at least one metallic oxide of silver, of gold, or of copper, said method including the following successive steps: 1111. An industrial decoration method in which a colored pattern () is made in the bulk of an article () made of transparent glass of composition including at least one metallic oxide of silver , of gold , or of copper , said method including the following successive steps:a step of laser irradiating the zone of said glass article that is to be colored; anda final step of annealing the irradiated glass;{'sup': −11', '12', '2, 'and being characterized in that a glass composition is used that includes cerium and that has a total content of antimony plus tin that is less than 100 ppm, and in that the glass composition has been oxidized by the glass passing along a delivery channel having an oxidizing atmosphere, in particular having an increased presence of oxygen, and in that the step of laser irradiating the zone that is to be colored is performed with laser irradiation having a pulse duration that is less than or equal to 10s, while delivering power to the glass at greater than 10W/cm.'}2. A method according to claim 1 , which a composition is used that contains neither antimony or tin.33. A method according to in which said irradiation step is performed with the help of a laser () having a wavelength lying in the range 250 nm to 1700 nm.43. A method according to in which said irradiation step is performed with the help of a laser () having a pulse duration that is shorter than 6 ps.5325. A method according to in which said irradiation step is performed with the help of a laser () from which the beam () passes through an optical focusing system ().6111. A method according to in which the laser has an overlap ratio and the overlap ratio of the laser is caused to vary during the irradiation step in order to ...

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Номер записи: 29
28-11-2013 дата публикации

Methods of separating strengthened glass sheets by mechanical scribing

Номер: US20130313301A1
Автор: Cho-Cheng (George) Hsieh, II Michael Albert Joseph, James William Brown, Yen Chia (Gina) Pai
Принадлежит: Corning Inc

A method of separating a strengthened glass sheet includes positioning a serrated scribing wheel at a position spaced apart from a first edge of the glass sheet and offset below a top surface of the glass sheet, where the glass sheet comprises a surface compression layer of layer depth DOL and a central region. The method also includes translating the serrated scribing wheel in a first direction at an initiation speed such that the serrated scribing wheel forms a crack initiation site comprising surface indentations extending into the surface compression layer, accelerating the serrated scribing wheel in the first direction from the initiation speed to a scoring speed to scribe a score line extending into the glass sheet to a median crack depth greater than DOL, and stopping the serrated scribing wheel in the first direction before the score line reaches a second edge of the glass sheet.

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Номер записи: 30
05-12-2013 дата публикации

READILY SINTERABLE SILICON CARBIDE POWDER AND SILICON CARBIDE CERAMIC SINTERED BODY

Номер: US20130323152A1
Автор: Aoki Yoshitaka, Yanaizumi Kazuhide
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon carbide powder has a carbon/silicon elemental ratio of 0.96 to 1.04, an average particle diameter of 1.0 to 100 μm, and a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a C-NMR spectrum. By sintering this silicon carbide powder under pressure, there can be produced a dense sintered body having a low specific resistance and a high purity. 1. A readily sinterable silicon carbide powder having:a carbon/silicon elemental ratio of 0.96 to 1.04;an average particle diameter of 1.0 to 100 μm; and{'sup': '13', 'a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a C-NMR spectrum.'}2. A method for producing the readily sinterable silicon carbide powder as set forth in claim 1 , comprising obtaining a silicon carbide powder by thermally decomposing a cured silicone powder in a non-oxidizing atmosphere.3. The method for producing the readily sinterable silicon carbide powder according to claim 2 , comprising a step of pulverizing the obtained silicon carbide powder to a required average particle diameter.4. A silicon carbide powder-based composition comprising:the readily sinterable silicon carbide powder as set forth in claim; andan organic binder, a carbon powder or a combination thereof.5. A ceramic sintered body of silicon carbide having:a carbon/silicon elemental ratio of 0.96 to 1.04; anda specific resistance of 1 Ω·cm or less.6. The ceramic sintered body ...

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Номер записи: 31
05-12-2013 дата публикации

Accelerated aging of phosphorus-doped optical fibers

Номер: US20130323414A1
Автор: David John Digiovanni, Durgesh Vaidya, George E. Oulundsen, Michael J. LuValle, Robert L. LINGLE
Принадлежит: OFS FITEL LLC

Adverse hydrogen aging limitations in multiply-doped optical fibers are overcome by passivating these optical fibers using a deuterium passivation process. This treatment essentially pre-reacts the glass with deuterium so that the most active glass sites are no longer available to react with hydrogen in service. Optical fibers of main interest are doped with mixtures of germanium and phosphorus. Optimum passivating process conditions are described.

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Номер записи: 32
20-02-2014 дата публикации

GRADED FLUORESCENT MATERIAL

Номер: US20140048831A1
Автор: Fujino Shigeru
Принадлежит: EMPIRE TECHNOLOGY DEVELOPMENT LLC

Some embodiments in the present disclosure generally relate to fluorescent structures such as fluorescent glass, fluorescent substrates, and/or light emitting devices, which can include a gradient of fluorescent molecules across the structure, substrate, and/or light emitting device. In some embodiments, the fluorescent glass, fluorescent substrates, and/or light emitting devices can be porous and include at least one fluorescent molecule within the one or more pore. In some embodiments, this can allow for the creation of a gradient fluorescent material throughout the material. 1. A graded fluorescent glass comprising: silica; and', 'a gradient of fluorescent molecules, wherein the gradient of fluorescent molecules comprises a first concentration of fluorescent molecules at the first surface, and a second concentration of fluorescent molecules at the second surface., 'a silica structure comprising a first surface and a second surface, and wherein the silica structure comprises'}2. The graded fluorescent glass of claim 1 , wherein a concentration of fluorescent molecules is about 50 ppm to about 10 claim 1 ,000 ppm.3. The graded fluorescent glass of claim 2 , wherein the gradient of fluorescent molecules comprises an approximately linear change in concentration from the first surface to the second surface.4. A light-emitting apparatus comprising:at least one light source; and silica;', 'at least a first pore within the silica and a second pore within the silica; and', 'at least a first fluorescent molecule within the first pore and at least two or more second fluorescent molecules within the second pore., 'a fluorescent silica glass, wherein the fluorescent silica glass comprises5. The light-emitting apparatus of claim 4 , wherein: the first fluorescent molecule absorbs radiation at a first wavelength of light claim 4 , the second fluorescent molecule absorbs radiation at a second wavelength of light claim 4 , and the first wavelength and the second wavelength are ...

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Номер записи: 33
20-02-2014 дата публикации

GLASS SUBSTRATE FOR MAGNETIC DISK AND METHOD FOR MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC DISK

Номер: US20140050912A1
Автор: Isono Hideki, Murakami Akira, Sato Masamune, Sato Takashi, Tanino Hidekazu
Принадлежит: HOYA CORPORATION

A method for manufacturing a glass substrate for magnetic disk is provided. The method includes a forming process of press-forming a lump of molten glass using a pair of dies, wherein in the forming process, the cooling rate of the molten glass during pressing is controlled so that a first compressive stress layer is formed on a pair of principal faces of a glass blank that is press formed, and the method includes a chemically strengthening process for forming a second compressive stress layer on a pair of principal faces of a glass substrate formed using the glass blank after the forming process. 1. A method for manufacturing a glass substrate for magnetic disk , the method comprising:a forming process of press-forming a lump of molten glass using a pair of dies, during which the cooling rate of the molten glass during pressing is controlled so that a first compressive stress layer is formed on each of a pair of principal faces of a glass blank that is press formed; anda chemically strengthening process for forming a second compressive stress layer on each of a pair of principal faces of a glass substrate formed using the glass blank after the forming process.2. The method for manufacturing a glass substrate for magnetic disk according to claim 1 , wherein in the forming process claim 1 , the falling lump of molten glass is press-formed using the pair of dies from directions claim 1 , each direction being orthogonal to the falling direction.3. The method for manufacturing a glass substrate for magnetic disk according to claim 1 , wherein in the forming process claim 1 , press forming is performed so that the temperature of the press forming surface of the pair of dies is substantially identical.4. The method for manufacturing a glass substrate for magnetic disk according to claim 1 , wherein the temperature of the pair of dies is kept lower than the glass transition point (Tg) of the molten glass during a period of time from when the glass blank contacts the pair ...

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Номер записи: 34
13-03-2014 дата публикации

TRANSPARENT LAMINATE WHICH INHIBITS PUNCTURE BY PROJECTILES

Номер: US20140072754A1
Автор: Groß Christoph, Langsdorf Andreas, Mitra Ina, Schaupert Kurt, STOEHR Ulrike
Принадлежит: SCHOTT AG

A transparent laminate is provided that includes at least one chemically prestressed pane having a thickness, a compressive stress (CS) of a surface layer, a thickness of the prestressed surface layer and a tensile stress (CT) of an interior portion. The tensile stress (CT) is greater than 0 and is less than the compressive stress divided by 50. 1. A transparent laminate comprising:at least one chemically prestressed pane, where the at least one chemically prestressed pane has a thickness, a compressive stress (CS) of a prestressed surface layer, a thickness of the prestressed surface layer, and a tensile stress (CT) in an interior, wherein that the tensile stress (CT) is greater than 0 and less than the compressive stress (CS) divided by 50.2. The transparent laminate according to claim 1 , wherein the tensile stress (CT) is less than the compressive stress (CS) divided by 100.3. The transparent laminate according to claim 1 , wherein the tensile stress (CT) is less than the compressive stress (CS) divided by 150.4. The transparent laminate according to claim 1 , wherein the tensile stress (CT) is more than 1 MPa.5. The transparent laminate according to claim 1 , wherein the tensile stress (CT) is more than 2 MPa.6. The transparent laminate according to claim 1 , wherein the at least one chemically prestressed pane has a compressive stress (CS) of 400 MPa or more.7. The transparent laminate according to claim 1 , wherein the at least one chemically prestressed pane has a compressive stress (CS) of 700 MPa or more.8. The transparent laminate according to claim 1 , wherein the at least one chemically prestressed pane has a compressive stress (CS) of 900 MPa or more.9. The transparent laminate according to claim 1 , wherein the thickness of at least one chemically prestressed pane is 3 mm or more.10. The transparent laminate according to claim 1 , wherein the thickness of at least one chemically prestressed pane is 6 mm or more.11. The transparent laminate according ...

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Номер записи: 35
20-03-2014 дата публикации

RADICAL-COMPONENT OXIDE ETCH

Номер: US20140080308A1
Автор: CHEN Zhijun, Hsu Ching-Mei, Ingle Nitin K., PARK SEUNG, Wang Anchuan, Zhang Jingchun
Принадлежит: Applied Materials, Inc.

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride. 1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber , wherein the patterned substrate has an exposed silicon oxide region , the method comprising;flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;flowing a nitrogen-and-hydrogen-containing precursor into the substrate processing region without first passing the nitrogen-and-hydrogen-containing precursor through the remote plasma region; andetching the exposed silicon oxide region with the combination of the plasma effluents and the nitrogen-and-hydrogen-containing precursor in the substrate processing region.2. The method of further comprising flowing an oxygen-containing precursor into the remote plasma region during the formation of the remote plasma.3. The method of further comprising flowing one of molecular oxygen claim 1 , nitrogen dioxide or nitrous oxide into the remote plasma region during the formation of the remote plasma.4. The method of wherein the nitrogen-and-hydrogen-containing precursor consists of nitrogen and hydrogen.5. The method of wherein the nitrogen-and- ...

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Номер записи: 36
20-03-2014 дата публикации

SILICON-CARBON-NITRIDE SELECTIVE ETCH

Номер: US20140080310A1
Автор: CHEN Zhijun, Ingle Nitin K., Wang Anchuan, Zhang Jingchun
Принадлежит: APPLIED MATERIALS INC.

A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride. 1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber , wherein the patterned substrate has an exposed silicon-nitrogen-and-carbon-containing region , the method comprising:flowing each of a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents; andetching the exposed silicon-nitrogen-and-carbon-containing region by flowing the plasma effluents into the substrate processing region through through-holes in a showerhead.2. The method of wherein the exposed silicon-nitrogen-and-carbon-containing region is silicon carbon nitride.3. The method of wherein the exposed silicon-nitrogen-and-carbon- ...

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Номер записи: 37
07-01-2016 дата публикации

METHOD OF PROCESSING OPTICAL FIBER AND METHOD OF ESTIMATING THEREFOR

Номер: US20160002105A1
Автор: HAMAGUCHI Hiroki
Принадлежит: FUJIKURA LTD.

A method of processing an optical fiber of the invention includes: a determination step of determining at least an ambient temperature of conditions of a diffusion treatment that causing an optical fiber to be subjected to an non-oxygen bridging atmosphere; an exposure step of exposing the optical fiber to a gas including an oxygen bridging element that is capable of processing the Non-Bridging Oxygen Hole Centers by being bonded to a non-bridging oxygen in the optical fiber, and causing the oxygen bridging element to infiltrate into the optical fiber; and a diffusion step of subsequently causing the optical fiber to be subjected to the non-oxygen bridging atmosphere in the exposure ambient temperature which is determined by the determination step and at which the optical fiber is subjected to the non-oxygen bridging atmosphere, and thereby diffusing the oxygen bridging element into the optical fiber. 1. A method of processing an optical fiber , comprising:a preparation step of preparing an optical fiber that comprises a core and a cladding surrounding the core and that is made of a silica-based glass; a first step of estimating an amount of Non-Bridging Oxygen Hole Centers in the entire optical fiber and estimating an amount of the oxygen bridging element required for processing the Non-Bridging Oxygen Hole Centers in the entire optical fiber;', 'a second step of determining correlation that is based on a diffusion model of gaseous molecules of an oxygen bridging element, is related to the oxygen bridging element supplied to the optical fiber, and is between an exposure ambient temperature at which the optical fiber is subjected to the non-oxygen bridging atmosphere, an exposure time at which the optical fiber is subjected to the non-oxygen bridging atmosphere in an exposure period in which the optical fiber is subjected to the non-oxygen bridging atmosphere, and the amount of the oxygen bridging element in the optical fiber; and', 'a third step of determining, ...

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Номер записи: 38
06-01-2022 дата публикации

SEMICONDUCTOR STRUCTURE PROCESSING METHOD AND FORMING METHOD

Номер: US20220005686A1
Автор: Xi Ning
Принадлежит: CHANGXIN MEMORY TECHNOLOGIES, INC.

A semiconductor structure processing method and forming method are provided. The semiconductor structure processing method includes the steps of: providing a semiconductor substrate, which is provided with feature portions having a mask layer on their top surfaces; ashing a semiconductor structure comprising the semiconductor substrate, the feature portions and the mask layer; removing the mask layer; cleaning the semiconductor structure, and forming an oxide layer on surfaces of the feature portions after the feature portions are cleaned; drying the semiconductor structure; and removing the oxide layer. During drying, one feature portion of at least one group of adjacent feature portions is inclined towards a feature portion adjacent thereto, and a distance between the inclined feature portion and the feature portion adjacent thereto after drying is smaller than a distance there between before drying. 1. A semiconductor structure processing method , comprising:providing a semiconductor substrate, which is provided with feature portions having a mask layer on their top surfaces;ashing a semiconductor structure comprising the semiconductor substrate, the feature portions and the mask layer;removing the mask layer;cleaning the semiconductor structure, and forming an oxide layer on surfaces of the feature portions after the feature portions are cleaned;drying the semiconductor structure; andremoving the oxide layer,wherein during drying, one feature portion of at least one group of adjacent feature portions inclines towards another feature portion adjacent thereto, and a distance between said one inclined feature portion and the other feature portion adjacent thereto after drying is smaller than a distance therebetween before drying.2. The semiconductor structure processing method of claim 1 , wherein ashing the semiconductor structure comprises:ashing the semiconductor structure by using an oxygen-free first mixed gas.3. The semiconductor structure processing method ...

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Номер записи: 39
05-01-2017 дата публикации

OPTICAL FIBER

Номер: US20170003446A1
Автор: HOMMA Yuya
Принадлежит:

An optical fiber comprises a glass fiber which comprises a core and a cladding, a primary resin coating layer which covers the periphery of the glass fiber, and a secondary resin coating layer which covers the periphery of the primary resin coating layer. The glass fiber is a multimode fiber having a core diameter of 40-60 μm and a cladding diameter of 90-110 μm, and the primary resin coating layer is a layer formed by curing a curable resin composition which comprises oligomers, monomers, and a reaction initiator, the curable resin composition containing a one-end-capped oligomer in an amount of 30% by mass or larger based on all the oligomers. 1. An optical fiber comprising a glass fiber which comprises a core and a cladding , a primary resin coating layer which covers the periphery of the glass fiber , and a secondary resin coating layer which covers the periphery of the primary resin coating layer , whereinthe glass fiber is a multimode fiber having a core diameter of 40-60 μm and a cladding diameter of 90-110 μm, andthe primary resin coating layer is a layer formed by curing a curable resin composition which comprises oligomers, monomers, and a reaction initiator, the curable resin composition containing a one-end-capped oligomer in an amount of 30% by mass or larger based on all the oligomers.2. The optical fiber according to claim 1 , wherein the primary resin coating layer has a Young's modulus of 0.5 MPa or less.3. The optical fiber according to claim 1 , which has a non-strippable resin coating layer disposed between the cladding and the primary resin coating layer claim 1 , the non-strippable resin layer having an outer diameter of 122-128 μm.4. The optical fiber according to claim 1 , wherein the glass fiber has claim 1 , on the periphery of the core claim 1 , a trench which is a portion having a lower refractive index than the cladding claim 1 , and wherein the core has a refractive index difference of 0.7% or larger claim 1 , the trench has a ...

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Номер записи: 40
04-01-2018 дата публикации

METHOD FOR MAKING AN OPTICAL ELEMENT HAVING A TEXTURED SURFACE AND AN OPTICAL ELEMENT HAVING A TEXTURED SURFACE

Номер: US20180003859A1
Автор: Morasse Bertrand
Принадлежит:

There is provided a method for making an optical element having a textured surface. The method comprises the steps of: a) providing a plurality of primary optical fiber segments, each primary fiber segment comprising one or more cores; b) bundling the primary fiber segments into an assembly with the cores of said primary fiber segments extending parallely; c) transforming the assembly into a secondary structure comprising the parallely extending cores; and d) etching a surface of the secondary structure according to an etch profile of said secondary structure, the etch profile being defined by the parallely extending cores, thereby forming the textured surface of the optical element. An optical element having a textured surface is also provided. 1. A method for making an optical element having a textured surface , comprising the steps of:a) providing a plurality of primary optical fiber segments, each primary fiber segment comprising one or more cores;b) bundling the primary fiber segments into an assembly with the cores of said primary fiber segments extending parallely;c) transforming the assembly into a secondary structure comprising the parallely extending cores; andd) etching a surface of the secondary structure according to an etch profile of said secondary structure, the etch profile being defined by the parallely extending cores, thereby forming the textured surface of the optical element.2. The method according to claim 1 , wherein step a) comprises the substeps of:providing a primary optical fiber; andsectioning the primary optical fiber into the plurality of primary optical fiber segments.3. The method according to claim 2 , wherein step a) further comprises a substep of removing a cladding surrounding a primary perform comprising the one or more cores claim 2 , the primary preform being drawn into the primary optical fiber.4. The method according to claim 1 , wherein the one or more cores of the primary optical fiber segments provided in step a) have an ...

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Номер записи: 41
13-01-2022 дата публикации

OPTICAL FIBER

Номер: US20220011504A1
Автор: KONISHI Tatsuya, SHIMADA Kensaku, Sohma Kazuyuki
Принадлежит: Sumitomo Electric Industries, Ltd.

An optical fiber comprises a glass fiber comprising a core and a cladding; and a coating resin layer coating the glass fiber, wherein the coating resin layer has a primary resin layer in contact with the glass fiber and coating the glass fiber and a secondary resin layer coating the outer periphery of the primary resin layer, the primary resin layer has a Young's modulus of 0.4 MPa or less at 23° C. and the primary resin layer has an outer diameter of 185 μm or more and 202 μm or less, the secondary resin layer has a glass transition temperature of 60° C. or more and 95° C. or less, and the difference between the average linear expansion coefficient of the coating resin layer in the range of 60° C. to 140° C. and the average linear expansion coefficient of the coating resin layer in the range of −60° C. to 0° C. is 0.7×10/° C. or less. 1. An optical fiber comprising:a glass fiber comprising a core and a cladding; anda coating resin layer coating the glass fiber,wherein the coating resin layer has a primary resin layer in contact with the glass fiber and coating the glass fiber and a secondary resin layer coating the outer periphery of the primary resin layer,the primary resin layer has a Young's modulus of 0.4 MPa or less at 23° C. and the primary resin layer has an outer diameter of 185 μm or more and 202 μm or less,the secondary resin layer has a glass transition temperature of 60° C. or more and 95° C. or less, and{'sup': '−4', 'a difference between an average linear expansion coefficient of the coating resin layer in the range of 60° C. to 140° C. and an average linear expansion coefficient of the coating resin layer in the range of −60° C. to 0° C. is 0.7×10/° C. or less.'}2. The optical fiber according to claim 1 , wherein the primary resin layer comprises a cured product of a resin composition containing a urethane oligomer claim 1 , a monomer and a photopolymerization initiator claim 1 , and the resin composition contains 40 mass % or more of a one-end non- ...

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Номер записи: 42
20-01-2022 дата публикации

FLOWABLE FILM FORMATION AND TREATMENTS

Номер: US20220020594A1
Автор: Jha Praket Prakash, Jiang Shishi, Mallick Abhijit Basu
Принадлежит: Applied Materials, Inc.

Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. 1. A processing method comprising:forming a plasma of a silicon-containing precursor;depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor, wherein the semiconductor substrate is housed in a processing region of a semiconductor processing chamber, wherein the semiconductor substrate defines a feature within the semiconductor substrate, and wherein the processing region is at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated;forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber, wherein the plasma of the hydrogen-containing precursor is formed at a first power level from a plasma power source, and wherein a bias power is applied to the substrate support from a bias power source at a second power level less than the first power level;etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor; anddensifying ...

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Номер записи: 43
20-01-2022 дата публикации

INTEGRATION PROCESSES UTILIZING BORON-DOPED SILICON MATERIALS

Номер: US20220020599A1
Автор: Cheng Rui, Chuang Ming-Yuan, GUO Juan, JANAKIRAMAN Karthik, Jin Qu, Kao Chia-Ling, KOSHIZAWA Takehito, Li Menghui, Li Zihui, Nittala Krishna, Shinohara Susumu, TEO RUSSELL CHIN YEE, Wang Anchuan, Yang Xiawan
Принадлежит: Applied Materials, Inc.

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor. 1. A processing method comprising:depositing a boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber;etching portions of the boron-containing material with a chlorine-containing precursor to form one or more features in the substrate; andremoving remaining portions of the boron-containing material from the substrate with a fluorine-containing precursor.2. The processing method of claim 1 , wherein the boron-containing material is a silicon-and-boron-containing material claim 1 , and wherein depositing the boron-containing material comprises:delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber;providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1; andforming a plasma of all precursors within the processing region of a semiconductor processing chamber.3. The processing method of claim 2 , wherein the silicon-containing precursor comprises silane claim 2 , and wherein the boron-containing precursor comprises diborane.4. The processing method of claim 1 , wherein the removing occurs at a rate of greater ...

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Номер записи: 44
11-01-2018 дата публикации

GLASS SHEET

Номер: US20180009707A1
Автор: HAYASHI Yasuo, MIURA Takenori, MIYASAKA Satoshi, YAMANAKA Kazuhiko
Принадлежит: Asahi Glass Company, Limited

A glass sheet includes a first main surface and a second main surface opposite to the first main surface in a thickness direction. X represented by the following formula (1) is −0.29 Подробнее

Номер записи: 45
12-01-2017 дата публикации

UV-Transparent Optical Fiber Coating For High Temperature Application, And Fibers Made Therefrom

Номер: US20170010411A1
Автор: Burgess David, Hines Michael J., HUANG Lei, Li Jie, Li Yaowen, Violette Brian
Принадлежит: OFS FITEL, LLC

An optical fiber having at least two polymer coatings, the optical fiber comprising: an optical fiber comprising a glass optical core and a glass cladding; a first polymer coating comprising a silicone polymer covering the optical fiber; and a second polymer coating covering the first polymer coating is provided. 1. An optical fiber having at least two polymer coatings , the optical fiber comprising:an optical fiber comprising a glass optical core and a glass cladding;a first polymer coating comprising a silicone polymer covering the optical core; anda second polymer coating covering the first polymer coating.2. The optical fiber of claim 1 , wherein the first polymer coating is disposed on and in intimate contact with the glass cladding.3. The optical fiber of claim 1 , wherein the second polymer coating comprises a polymer selected from acrylates claim 1 , aliphatic polyacrylates claim 1 , silsesquioxanes claim 1 , alkyl substituted silicones claim 1 , vinyl ethers claim 1 , or a combination comprising at least one of the foregoing.4. The optical fiber of claim 3 , wherein the second polymer coating comprises a vinyl ether polymer claim 3 , acrylate polymer claim 3 , epoxy polymer claim 3 , or urethane acrylate polymer.5. The optical fiber of claim 1 , wherein the second polymer coating is a vinyl ether polymer and the vinyl ether polymer has a number average molecular weight of at least 10 claim 1 ,000 grams per mole.6. The optical fiber of claim 1 , wherein the first polymer coating has a thickness on the optical fiber of between 20 and 80 micrometers.7. The optical fiber of claim 1 , wherein the second polymer coating has a thickness on the optical fiber of between 2 and 35 micrometers.8. The optical fiber of claim 1 , wherein the first and second polymer coatings have a combined thickness on the optical fiber of between 22 and 115 micrometers.9. The optical fiber of claim 1 , wherein the first polymer coating remains flexible at a temperature from -115 to 204° ...

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Номер записи: 46
09-01-2020 дата публикации

Pressed and Self Sintered Polymer Derived SiC Materials, Applications and Devices

Номер: US20200010373A1
Автор: Benac Brian L., Diwanji Ashish P., Dukes Douglas M., Hopkins Andrew R., Land Mark S., Sandgren Glenn, Sherwood Walter J.
Принадлежит: Pallidus, Inc.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. 118-. (canceled)19. A sinterable silicon carbide composition comprising:a. a plurality of silicon carbide particles, the plurality of particles having a total weight of greater than at least about 10 grams;b. the particles having a mean particle size of about 0.5 μm or smaller;{'sub': '4', 'c. the composition consisting essentially of silicon and carbon in an SiCconfiguration, wherein the particles have less than 0.5% excess carbon, and are at least 99.99999% pure;'}d. wherein the particles are capable of being sintered into a solid SiC article without the need for a sintering aid, the sintered SiC article having at least one strength properties at least 90% as strong as elemental SiC.20. A silicon carbide composition comprising:a. polymer derived silicon carbide particles;b. the particles having a mean particle size of about 0.5 μm or smaller, each particle having a surface, wherein the surfaces are free from an oxide layer;c. the particles consisting essentially of silicon and carbon, wherein the particles have less than 0.5% excess carbon, and are at least 99.99999% pure.2127-. (canceled) This application: (i) claims under 35 U.S.C. § 119(e)(1) the benefit of the filing date of Sep. 25, 2014 of U.S. provisional application Ser. No. 62/055,397; (ii) claims under 35 U.S.C. § 119(e)(1) the benefit of the filing date of Sep. 25, 2014 of U.S. provisional application Ser. No. 62/055,461; (iii) claims under 35 U.S.C. § 119(e)(1) the benefit of the filing date of Sep. 25, 2014 of U.S. provisional application Ser. No. 62/055,497; (iv) claims under 35 U.S.C. § 119(e)(1) the benefit of the filing date of Feb. 4, 2015 of U.S. provisional application Ser. No. 62/112,025; (v) is a continuation in ...

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Номер записи: 47
15-01-2015 дата публикации

Toughened Glass Fabrication Method And Toughened Glass Fabricated Thereby

Номер: US20150013389A1
Автор: KIM Jiyoung, Kim Jong Taek, Lee Hwayeon, Lim Jin Sung, OH Sang Yoon
Принадлежит:

A toughened glass fabrication method in which the productivity of a large toughened glass and the strength variation of the toughened glass can be improved and a toughened glass fabricated thereby. The toughened glass fabrication method includes the steps of mounting jigs on an upper surface and an undersurface of a raw glass such that an injection space through which a gel-type salt mixture is to be injected is defined between each of the jigs and the raw glass, injecting the gel-type salt mixture into the injection spaces, and heat-treating the raw glass on which the jigs are mounted. 1. A toughened glass fabrication method comprising:mounting jigs on an upper surface and an undersurface of a raw glass such that an injection space through which a gel-type salt mixture is to be injected is defined between each of the jigs and the raw glass;injecting the gel-type salt mixture into the injection spaces; andheat-treating the raw glass on which the jigs are mounted.2. The toughened glass fabrication method of claim 1 , wherein the gel-type salt mixture comprises an alkali metal ion salt and an inorganic oxide.3. The toughened glass fabrication method of claim 2 , wherein the alkali metal ion salt comprises at least one selected from the group consisting of a nitride claim 2 , a chloride and a sulfate.4. The toughened glass fabrication method of claim 3 , wherein the alkali metal ion salt comprises potassium nitrate (KNO).5. The toughened glass fabrication method of claim 1 , wherein heat-treating the raw glass comprises heat-treating the raw glass at a temperature ranging from 200 to 740° C.6. The toughened glass fabrication method of claim 1 , further comprising cooling the raw glass after heat-treating the raw glass.7. The toughened glass fabrication method of claim 6 , further comprising claim 6 , after cooling the raw glass claim 6 , removing the jigs from the raw glass and then cleaning the raw glass.8. The toughened glass fabrication method of claim 1 , wherein ...

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Номер записи: 48
12-01-2017 дата публикации

ADJUSTABLE REMOTE DISSOCIATION

Номер: US20170011931A1
Автор: Jung Soonwook, LUBOMIRSKY DMITRY, Park Soonam, Schatz Kenneth D.
Принадлежит: Applied Materials, Inc.

Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio. 1. A method of etching a patterned substrate , the method comprising:placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a first exposed portion and a second exposed portion;flowing an inert gas into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;combining the plasma effluents with an oxidizing precursor; andetching the first exposed portion with the combination of the plasma effluents and the oxidizing precursor, wherein the first exposed portion etches at a first etch rate and the second exposed portion etches at a second etch rate which is lower than the first etch rate, wherein an electron temperature is less than 0.5 eV in the substrate processing region during the operation of etching the first exposed portion.2. The method of wherein the inert gas is argon.3. The method of wherein the oxidizing precursor comprises a halogen.4. (canceled)5. The method of wherein the oxidizing precursor is not excited in any remote plasma prior to entering the substrate processing chamber.6. The method of wherein the first ...

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Номер записи: 49
09-01-2020 дата публикации

Screening apparatus for optical fiber

Номер: US20200011763A1
Автор: Takashi Suzuki
Принадлежит: Furukawa Electric Co Ltd

A screening apparatus for an optical fiber includes a delivery unit that delivers an optical fiber; a screening unit that applies tension to the delivered optical fiber to perform screening of the optical fiber; a winding unit that winds the optical fiber after screening; and a static electricity removing unit that removes static electricity of the optical fiber traveling on the predetermined passage, the static electricity removing unit being disposed along a predetermined passage of a passage of the optical fiber from an exit side of the screening unit to an entry side of the winding unit.

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Номер записи: 50
09-01-2020 дата публикации

CAP STRUCTURE

Номер: US20200013672A1
Автор: Aquilino Michael, CAO Huy, CARPENTER Patrick, CHANG Chih-Chiang, Gao Jinsheng, Hong Junsic, Huang Haigou, JAEGER Daniel, RUTKOWSKI Mitchell
Принадлежит:

The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure. 1. A method comprising:forming a gate structure composed of conductive gate material;forming a first capping material on the conductive gate material;forming sidewall spacers on the gate structure and the first capping material;recessing the first capping material below the sidewall spacers; andforming a second capping material on the first capping material, the second capping material overhanging the sidewall spacers.2. The method of claim 1 , further comprising planarizing or etching back the second capping material to overhang the sidewall spacers claim 1 , and forming a T-shaped capping structure composed of the first capping material and the second capping material.3. The method of claim 2 , wherein the first capping material is nitride material and the second capping material is an etch resistant material that is a different material than the nitride material.4. The method of claim 1 , wherein the first capping material is formed directly on the conductive gate material and comprises a recessed portion between the sidewall spacers on the gate structure.5. The method of claim 4 , wherein the second capping material is formed within the recessed portion of the first capping material and extends over and in direct contact with a top surface of the sidewall spacers on the gate structure.6. The method of claim 5 , wherein the second capping material is T-shaped and the second capping material is a top material that is resistant to etch chemistries and which overhangs over the sidewall spacers.7. The method of claim 6 , wherein the first capping material ...

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Номер записи: 51
03-02-2022 дата публикации

METHOD FOR MANUFACTURING A CONSOLIDATED DENSIFIED PART MADE OF CERAMIC OR MADE OF CARBON

Номер: US20220033313A1
Автор: Allemand Alexandre, Baux Anthony, Chollon Georges, Jacques Sylvain, Piquero Thierry
Принадлежит:

A method for manufacturing a part from a first ceramic or from carbon, consolidated by a second ceramic, having a determined geometry, that involves carrying out the following sequence of steps: a) manufacturing a preform made from an organic polymer; b) impregnating the preform made from an organic polymer with a resin that is a precursor of the first ceramic or a resin that is a precursor of carbon; c) crosslinking and/or polymerising, then pyrolysing the resin that is a precursor of the first ceramic or the resin that is a precursor of carbon; to obtain a part made from a first ceramic or from carbon having the same geometry as the part to be manufactured; e) depositing the second ceramic on the part made from a first ceramic or from carbon by means of a chemical vapour deposition or CVD process or a chemical vapour infiltration or CVI process. 1. A method for manufacturing a part made of a first ceramic or made of carbon , consolidated by a second ceramic , having a determined geometry , wherein the following successive steps are carried out:a) a preform made of an organic polymer is manufactured, the preform having the same geometry as the part to be manufactured;b) the preform made of an organic polymer is impregnated with a first-ceramic precursor resin or a carbon precursor resin;c) the first-ceramic precursor resin or the carbon precursor resin is cross-linked and/or polymerised and then pyrolysed;d) optionally, steps b) and c) are repeated;whereby, at the end of step c) or step d), a part made of a first ceramic or made of carbon, having the same geometry as the part to be manufactured, is obtained;e) the second ceramic is deposited onto the part made of a first ceramic or made of carbon obtained at the end of step c) or step d), by a Chemical Vapour Deposition (CVD) method or a Chemical Vapour Infiltration (CVI) method.2. The method according to claim 1 , wherein the determined geometry is a complex geometry.3. The method according to claim 1 , wherein ...

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Номер записи: 52
15-01-2015 дата публикации

BIO-BASED BINDERS FOR INSULATION AND NON-WOVEN MATS

Номер: US20150017858A1
Автор: Chen Liang, Hawkins Christopher M., Hernandez-Torres Jesus M.
Принадлежит:

An aqueous binder composition is provided that includes a carbohydrate and a crosslinking agent. In exemplary embodiments, the carbohydrate-based binder composition may also include a catalyst, a coupling agent, a process aid, a crosslinking density enhancer, an extender, a moisture resistant agent, a dedusting oil, a colorant, a corrosion inhibitor, a surfactant, a pH adjuster, and combinations thereof. The carbohydrate may be natural in origin and derived from renewable resources. Additionally, the carbohydrate polymer may have a dextrose equivalent (DE) number from 2 to 20. In at least one exemplary embodiment, the carbohydrate is a water-soluble polysaccharide such as dextrin or maltodextrin and the crosslinking agent is citric acid. Advantageously, the carbohydrates have a low viscosity and cure at moderate temperatures. The environmentally friendly, formaldehyde-free binder may be used in the formation of insulation materials and non-woven chopped strand mats. A method of making fibrous insulation products is also provided. 1. An aqueous binder composition for use in the formation of fiberglass insulation and non-woven mats comprising:at least one carbohydrate selected from dextrin, maltodextrin, and combinations thereof having a dextrose equivalent number from 9 to 14, said at least one carbohydrate comprising from about 40% to about 95% by weight of total solids of said binder composition; andat least one crosslinking agent selected from monomeric polycarboxylic acid, citric acid, or their corresponding salts, said at least one crosslinking agent comprising from about 5% to about 40% of total solids of said binder composition, said at least one crosslinking agent having a molecular weight from about 90 to about 10,000.2. The binder composition of claim 1 , wherein said carbohydrate has a molecular weight from about 1 claim 1 ,000 to about 8 claim 1 ,000.3. The binder composition of claim 1 , wherein said crosslinking agent is citric acid or salt thereof.4. ...

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Номер записи: 53
16-01-2020 дата публикации

LASER-COLORED SAPPHIRE MATERIAL

Номер: US20200017408A1
Автор: Fagan Christopher R., Li Michael M., Prasad Anubhav
Принадлежит:

A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion. 1. A sapphire component , comprising:a first portion; anda second portion integrally formed with the first portion and having a chemical composition that is distinct from the first portion, wherein:the second portion is optically contrasted with respect to the first portion.2. The sapphire component of claim 1 , wherein:the first portion is substantially transparent; andthe second portion is substantially opaque and defines a visible color distinct from a color of the first portion.3. The sapphire component of claim 1 , wherein the second portion has an oxygen content that is distinct from an oxygen content of the first portion.4. The sapphire component of claim 1 , wherein:the first portion defines a primary surface of the sapphire component; andthe first and second portions define a second surface of the sapphire component.5. The sapphire component of claim 4 , wherein the second portion extends from the secondary surface and towards the primary surface.6. The sapphire component of claim 5 , wherein a chemical composition of the second portion varies between the primary and secondary surfaces.7. An electronic device claim 5 , comprising:an exterior ...

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Номер записи: 54
21-01-2021 дата публикации

Fusion-formable glass-based articles including a metal oxide concentration gradient

Номер: US20210017072A1
Автор: Charlene Marie Smith, Guangli Hu, Rostislav Vatchev Roussev, Steven Alvin Tietje, Timothy Michael Gross, Zhongzhi Tang
Принадлежит: Corning Inc

A glass-based article including a first surface and a second surface opposing the first surface defining a thickness (t) of about 3 millimeters or less (e.g., about 1 millimeter or less), and a stress profile, wherein all points of the stress profile between a thickness range from about 0·t up to 0.3·t and from greater than about 0.7·t to t, comprise a tangent with a slope having an absolute value greater than about 0.1 MPa/micrometer. In some embodiments, the glass-based article includes a non-zero metal oxide concentration that varies along at least a portion of the thickness (e.g., 0·t to about 0.3·t) and a maximum central tension of less than about 71.5/√(t) (MPa). In some embodiments, the concentration of metal oxide or alkali metal oxide decreases from the first surface to a point between the first surface and the second surface and increases from the point to the second surface. The concentration of the metal oxide may be about 0.05 mol % or greater or about 0.5 mol % or greater throughout the thickness. Methods for forming such glass-based articles are also disclosed.

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Номер записи: 55
21-01-2021 дата публикации

OPTICAL FIBER MANUFACTURING METHOD AND MANUFACTURING DEVICE

Номер: US20210017073A1
Автор: YOSHIDA Nao
Принадлежит: Sumitomo Electric Industries, Ltd.

The present invention is a method for manufacturing an optical fiber which includes a resin coating step in which a resin is supplied to a resin coating section via piping, and a glass fiber is passed through the resin coating section such that the resin is coated on the outer circumference of the glass fiber. In the resin coating step, the temperature of the resin inside the piping is measured, and a heating unit provided on the outer circumference of at least some of the piping is controlled such that the temperature of the resin inside the piping reaches a set target temperature; and a viscometer is disposed in between the resin coating section and the piping on which the heating unit is provided, and the set value of the target temperature is adjusted such that the viscosity of the resin measured by the viscometer reaches a target viscosity. 1. A method for manufacturing an optical fiber , the method comprising: supplying resin to a resin coating portion via a pipe;', 'causing a glass fiber to pass through the resin coating portion;', 'coating an outer periphery of the glass fiber with the resin;', 'controlling a heating portion provided around an outer periphery of at least a part of the pipe so that a resin temperature in the pipe becomes a set target temperature with measuring the resin temperature in the pipe; and', 'adjusting a set value of the target temperature so that a resin viscosity measured by a viscometer becomes a target viscosity, the viscometer being disposed between the resin coating portion and the heating portion., 'a resin coating step, comprising2. The method for manufacturing the optical fiber according to claim 1 , further comprising:keeping the resin coating portion at a predetermined temperature by allowing a fluid having a predetermined temperature set value to flow around a periphery of the resin coating portion; andadjusting the temperature set value of the fluid based upon the resin viscosity measured by the viscometer.3. The method ...

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Номер записи: 56
19-01-2017 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20170018407A1
Автор: Kondo Takashi
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a plasma processing apparatus for performing a processing on a processing target substrate by applying of plasma of a processing gas to the processing target substrate. The plasma processing apparatus includes: a processing container configured to removably accommodate the processing target substrate; a lower electrode provided in the processing container to place the processing target substrate thereon; an upper electrode provided in the processing container to face the lower electrode; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; and an electromagnet having one or more annular coils around a central axis that passes through a center of the lower electrode vertically in an upper portion or at an upper side of the processing container. 1. A plasma processing apparatus for performing a processing on a processing target substrate by applying plasma of a processing gas to the processing target substrate , the apparatus comprising:a processing container configured to removably accommodate the processing target substrate;a lower electrode provided in the processing container to place the processing target substrate thereon;an upper electrode provided in the processing container to face the lower electrode;a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; andan electromagnet having one or a plurality of annular coils around a central axis that passes through a center of the lower electrode vertically, in an upper portion or at an upper side of the processing container.2. The plasma processing apparatus of claim 1 , wherein the plurality of annular coils are arranged concentrically in the same plane.3. The plasma processing apparatus of claim 2 , wherein the electromagnet includes a yoke that covers an inner peripheral surface claim 2 , an outer peripheral surface claim 2 , and a top surface of each of the ...

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Номер записи: 57
21-01-2016 дата публикации

Method for Increasing Oxide Etch Selectivity

Номер: US20160020114A1
Автор: Metz Andrew
Принадлежит:

Techniques herein include methods for etching an oxide layer with greater selectivity to underlying channel materials. Such an increase in etch selectivity reduces damage to channel materials thereby providing more reliable and better performing semiconductor devices. Techniques herein include using fluorocarbon gas to feed a plasma to create etchants, and also creating a flux of ballistic electrons to treat a given substrate during an etch process.

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Номер записи: 58
21-01-2016 дата публикации

Etching Method and Storage Medium

Номер: US20160020115A1
Автор: ASAHI Kenshirou, DEMICHI Kimihiko, Takahashi Hiroyuki
Принадлежит:

An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target substrate by a chemical vapor deposition method or an atomic layer deposition method, a second silicon oxide film that includes a thermally-oxidized film and a silicon nitride film. The second silicon oxide film and the silicon nitride are formed adjacent to the first silicon oxide film. The etching method further includes supplying an HF gas and an alcohol gas or water vapor into the chamber to selectively etch the first silicon oxide film with respect to the second silicon oxide film and the silicon nitride film.

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Номер записи: 59
17-04-2014 дата публикации

D1379 P RADIATION CURABLE PRIMARY COATING ON OPTICAL FIBER

Номер: US20140105555A1
Автор: MURPHY Edward J, SCHMID Steven R., TORTORELLO Anthony Joseph, WU Xiaosong Dean, ZIMMERMAN John M
Принадлежит: DSM IP ASSETS B.V.

Radiation curable coatings for use as a Primary Coating for optical fibers, optical fibers coated with said coatings and processes to coat the optical fiber are described and claimed. The radiation curable coating is a radiation curable Primary Coating composition comprising: an oligomer; a first diluent monomer; a second diluent monomer, a photoinitiator; an antioxidant; and an adhesion promoter; wherein said oligomer is the reaction product of: a hydroxyethyl acrylate; an aromatic isocyanate; an aliphatic isocyanate; a polyol; a catalyst; and an inhibitor, and wherein said oligomer has a number average molecular weight of from at least about 4000 g/mol to less than or equal to about 15,000 g/mol; wherein a cured film of said radiation curable primary coating composition has a peak tan delta Tg of from about −25° C. to about −45° C. and a modulus of from about 0.50 MPa to about 1.2 MPa. 17-. (canceled)9. The process of wherein said glass drawing tower is operated at a line speed of between about 750 meters/minute and about 2100 meters/minute.10. The process of wherein the radiation curable primary coating composition claim 8 , further comprises a catalyst claim 8 , wherein said catalyst is selected from the group consisting of dibutyl tin dilaurate; organobismuth catalysts such as bismuth neodecanoate claim 8 , CAS 34364-26-6; zinc neodecanoate claim 8 , CAS 27253-29-8; zirconium neodecanoate claim 8 , CAS 39049-04-2; and zinc 2-ethylhexanoate claim 8 , CAS 136-53-8; sulfonic acids claim 8 , including but not limited to dodecylbenzene sulfonic acid claim 8 , CAS 27176-87-0; and methane sulfonic acid claim 8 , CAS 75-75-2; amino or organo-base catalysts claim 8 , including claim 8 , but not limited to: 1 claim 8 ,2-dimethylimidazole claim 8 , CAS 1739-84-0; and diazabicyclo[2.2.2]octane (DABCO) claim 8 , CAS 280-57-9 (strong base); and triphenyl phosphine; alkoxides of zirconium and titanium claim 8 , including claim 8 , but not limited to zirconium butoxide claim 8 ...

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Номер записи: 60
16-01-2020 дата публикации

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STRUCTURES

Номер: US20200020582A1
Автор: CHENG Chung-Liang, Fang Ziwei
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A structure and a formation method of a semiconductor device structure are provided. The method includes forming a first fin structure, a second fin structure, and a third fin structure over a semiconductor substrate. The method includes forming first spacer elements over sidewalls of the first fin structure and the second fin structure and partially removing the first fin structure and the second fin structure. The method includes forming second spacer elements over sidewalls of the third fin structure and partially removing the third fin structure. The second spacer element is taller than the first spacer element. The method includes epitaxially growing a semiconductor material over the first fin structure, the second fin structure, and the third fin structure such that a merged semiconductor element is formed on the first fin structure and the second fin structure, and a semiconductor element is formed on the third fin structure. 1. A method for forming a semiconductor device structure , comprising:forming a first conductive feature over a semiconductor substrate;forming an oxygen-absorbing layer on a surface of the first conductive feature, wherein the oxygen-absorbing layer absorbs oxygen from the first conductive feature and becomes an oxygen-containing layer;applying a metal-containing precursor on the oxygen-containing layer to remove the oxygen-containing layer and continue to form a metal-containing layer on the first conductive feature, wherein after removing the oxygen-containing layer, the surface originally covered by the oxygen-containing layer is directly exposed to the metal-containing precursor to form the metal-containing layer on the surface; andforming a second conductive feature on the metal-containing layer.2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first conductive feature is a metal gate stack.3. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the ...

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Номер записи: 61
21-01-2021 дата публикации

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Номер: US20210020451A1
Автор: Lin Xi, Wang Sheng
Принадлежит:

A method for forming a semiconductor structure includes providing a substrate, forming a stop layer over a surface of the substrate, forming a dielectric layer over a surface of the stop layer, forming a first opening in the dielectric layer and exposing a portion of the stop layer, modifying the portion of the stop layer exposed at a bottom of the first opening to form a modification layer, and removing the modification layer to form a second opening from the first opening. 1. A method for forming a semiconductor structure , comprising:providing a substrate;forming a stop layer over the substrate;forming a dielectric layer over the stop layer;forming a first opening in the dielectric layer, the first opening exposing a portion of the stop layer;modifying the portion of the stop layer exposed at a bottom of the first opening to form a modification layer; andremoving the modification layer to form a second opening from the first opening.2. The method according to claim 1 , wherein:a plasma processing process is performed to modify the portion of the stop layer exposed at the bottom of the first opening.3. The method according to claim 1 , wherein:the stop layer is made of a material including aluminum nitride, aluminum oxide, or silicon nitride; andthe modification layer is made of a material including aluminum or silicon oxide.4. The method according to claim 2 , wherein: 'a volume ratio of hydrogen in the processing gas is greater than 20%; or the processing gas used in the plasma processing process is oxygen.', 'a processing gas used in the plasma processing process includes a mixed gas of hydrogen and argon, wherein5. The method according to claim 3 , wherein:the modification layer is removed by a wet etching process; andan etching solution used in the wet etching process includes a hydroxylamine solution or a hydrogen fluoride solution.6. The method according to claim 1 , wherein:the substrate includes a base substrate and an isolation layer disposed over the ...

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Номер записи: 62
28-01-2016 дата публикации

GLASS SHEET AND METHOD FOR PRODUCING GLASS SHEET

Номер: US20160023946A1
Автор: HOTTA Hirofumi, MITANI Kazuishi, SAITO Yasuhiro
Принадлежит: NIPPON SHEET GLASS COMPANY, LIMITED

The glass sheet of the present invention is a glass sheet with a thickness of 1.6 mm or less produced by a float process in which a molten glass material is formed into a sheet on a molten metal. When one surface of the glass sheet kept in contact with the molten metal during the formation of the molten glass material into the glass sheet is defined as a first surface and the other surface of the glass sheet opposite to the first surface is defined as a second surface, at least the first surface has been subjected to a treatment for forming a densified dealkalized layer therein. An etching rate ER(nm/min) of the first surface and an etching rate ER(nm/min) of the second surface satisfy a relation of ER/ER≦0.8 when the first surface and the second surface are etched using 0.1 mass % hydrofluoric acid at 50° C. as an etching liquid. 1. A glass sheet with a thickness of 1.6 mm or less produced by a float process in which a molten glass material is formed into a sheet on a molten metal , whereinwhen one surface of the glass sheet kept in contact with the molten metal during the formation of the molten glass material into the glass sheet is defined as a first surface and the other surface of the glass sheet opposite to the first surface is defined as a second surface, at least the first surface has been subjected to a treatment for forming a densified dealkalized layer therein, and{'sub': 1', '2', '2', '1, 'an etching rate ER(nm/min) of the first surface and an etching rate ER(nm/min) of the second surface satisfy a relation of ER/ER≦0.8 when the first surface and the second surface are etched using 0.1 mass % hydrofluoric acid at 50° C. as an etching liquid.'}2. The glass sheet according to claim 1 , wherein ERand ERsatisfy a relation of ER/ER≦0.7.3. The glass sheet according to claim 1 , wherein the second surface has been subjected to a treatment for forming a densified dealkalized layer therein.4. A method for producing a glass sheet with a thickness of 1.6 mm or ...

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Номер записи: 63
21-01-2021 дата публикации

METHODS FOR FORMING ELONGATED CONTACT HOLE ENDS

Номер: US20210020499A1
Автор: Gilchrist Glen F.R., Liang Shurong
Принадлежит: Applied Materials, Inc.

Disclosed is a semiconductor processing approach wherein a wafer twist is employed to increase etch rate, at select locations, along a hole or space end arc. By doing so, a finished hole may more closely resemble the shape of the incoming hole end. In some embodiments, a method may include providing an elongated contact hole formed in a semiconductor device, and etching the elongated contact hole while rotating the semiconductor device, wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device. The elongated contact hole may be defined by a set of sidewalls opposite one another, and a first end and a second end connected to the set of sidewalls, wherein etching the elongated contact hole causes the elongated contact hole to change from an oval shape to a rectangular shape. 1. A method , comprising:providing an elongated contact hole formed in a semiconductor device; andetching the elongated contact hole to cause the elongated contact hole to change from an oval shape to a rectangular shape.2. The method of claim 1 , further comprising rotating the semiconductor device while the elongated contact hole is being etched claim 1 , wherein the etching is performed by an ion beam delivered at a non-zero angle relative to a plane defined by the semiconductor device.3. The method of claim 2 , further comprising etching a set of shoulder areas between a set of sidewalls claim 2 , wherein etching the set of shoulder areas causes the set of sidewalls to extend parallel to one another.4. The method of claim 3 , wherein an angle of incidence and an ion flux are optimized at a first end and a second end of the elongated contact hole to cause the set of shoulder areas to be etched faster than an apex of the elongated contact hole.5. The method of claim 4 , wherein the angle of incidence is determined based on the non-zero angle of the ion beam and an angle of rotation of the semiconductor device about an ...

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Номер записи: 64
17-04-2014 дата публикации

Methods For Atomic Layer Etching

Номер: US20140106565A1
Автор: Chang Mei, Yudovsky Joseph
Принадлежит:

Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate. 1. A method of processing a substrate having a surface , the method comprising:laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas;forming an etch layer on the substrate surface comprising exposing the substrate surface to the first reactive gas;locally changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; andlocally removing the vaporized etch layer from the surface,wherein at a portion of the surface is being exposed to the first reactive gas while the local temperature of a different portion of the surface is being changed.2. The method of claim 1 , wherein the first temperature is below an isotropic etch point of the etch layer and the second temperature is greater than or equal to the isotropic etch point of the etch layer.3. The method of claim 1 , wherein the surface temperature is changed by one or more of radiative heating or resistive heating.4. The method of claim 1 , wherein the surface comprises silicon.5. The method of claim 4 , wherein the first reactive gas comprises fluorine.6. The method of claim 5 , wherein the first temperature is in the range of about 20° C. to about 50° C. and the second temperature is in the range of about 100° C. to about 200° C.7. The method of claim 1 , wherein forming the etch layer on the substrate surface further comprises exposing the substrate surface to a second reactive gas different from the first reactive gas.8. The method of claim 7 , ...

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Номер записи: 65
26-01-2017 дата публикации

GLASS BUMPS ON GLASS ARTICLES AND METHODS OF LASER-INDUCED GROWTH

Номер: US20170022100A1
Автор: Masters Leonard Thomas, Streltsov Alexander Mikhailovich
Принадлежит:

A glass article having a glass bump formed integrally thereon by laser-irradiation methods. The glass bump includes a lower region connected to an upper region by an inflection region. The lower region projects from a surface of the glass article and is defined by concavely rounded sides with a radius of curvature R. The upper region includes a transition portion and a top portion. The transition portion is defined by convexly rounded sides with a radius of curvature R. The transition portion connects to the lower portion via the inflection region. The upper portion connects to the transition portion and is defined by a convexly rounded top surface with a radius of curvature R, which is greater than radius of curvature R 1. A glass article comprising:a glass surface having a glass bump thereon, wherein the glass bump comprises:{'b': 1', '1', '1, 'a lower region comprising a diameter D defined by concavely rounded sides, wherein the lower region projects from the surface of the glass article, wherein diameter D is the glass bump maximum diameter, wherein the concavely rounded sides have a radius of curvature R and join with the glass article surface;'}an inflection region connecting the lower region of the glass bump and an upper region of the glass bump; [{'b': 2', '2', '2', '1, 'the transition portion comprising a diameter D defined by convexly rounded sides, wherein the convexly rounded sides have a radius of curvature R, wherein diameter D is less than diameter D; and'}, {'b': 3', '3', '2', '3', '2, 'the top portion comprising a diameter D defined by a convexly rounded top surface, the convexly rounded top surface joining with the convexly rounded sides converging from the transition portion, wherein the convexly rounded top surface has a radius of curvature R from about 900 microns to about 2600 microns which is greater than the radius of curvature R, wherein diameter D is less than diameter D, wherein the convexly rounded top surface is spaced apart from the ...

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Номер записи: 66
22-01-2015 дата публикации

SYSTEMS AND METHODS TO MITIGATE NITRIDE PRECIPITATES

Номер: US20150024600A1
Автор: LI Jung-Jui
Принадлежит:

A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid. 1. A method of fabricating a semiconductor device , the method comprising:providing a substrate having an oxide layer;removing at least a portion of the oxide layer by reacting HF and NH3 with the oxide layer to form a nitride layer over an unconsumed portion of the oxide layer;removing the nitride layer and leaving a nitride precipitate byproduct on the unconsumed portion of the oxide layer; andremoving the nitride precipitate byproduct by dipping the substrate in a liquid solution of phosphoric acid.2. The method of claim 1 , wherein removing at least a portion of the oxide layer includes placing the device on a stage in a chamber with HF and NH3 gas.3. The method of claim 2 , wherein the HF and NH3 NH3 gas are provided with a ratio of about 0.1 to 1.4. The method of claim 2 , wherein the stage is set to a temperature within a range of about 20 to 50 degrees Celsius.5. The method of claim 2 , wherein a wall temperature of the chamber is set to over about 60 degrees Celsius in order to mitigate depositing nitride precipitate byproduct on the wall of the chamber.6. The method of claim 1 , wherein the nitride layer is formed as (NH4)2SiF6 (NH4)2SiF6.7. The method of claim 1 , further comprising forming the oxide layer over the substrate.8. The method of claim 1 , wherein removing the nitride layer includes heating the device and causing nitride material of the nitride layer to evaporate.9. The method of claim 8 , wherein heating the device includes placing the device on a stage within a chamber and bringing the stage to a temperature over about 90 degrees Celsius.10. The method of claim 1 , wherein the nitride precipitate byproduct includes one or more of NO− claim 1 , ...

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Номер записи: 67
25-01-2018 дата публикации

Composite Ceramics and Ceramic Particles and Method for Producing Ceramic Particles and Bulk Ceramic Particles

Номер: US20180022652A1
Автор: Easter William, Hill Arnold
Принадлежит:

Methods for producing Polymer Derived Ceramic (PDCs) particles and bulk ceramic components and compositions from partially cured gelatinous polymer ceramic precursors and unique bulk composite PDC ceramics and unique PDC ceramic particles in size and composition. Methods of making fully dense PDCs over approximately 2 μm to approximately 300 mm in diameter for applications such as but not limited to proppants, hybrid ball bearings, catalysts, and the like. Methods can include emulsion processes or spray processes to produce PDCs. The ceramic particles and compositions can be shaped and chemically and materially augmented with enhancement particles in the liquid resin or gelatinous polymeric state before being pyrolyzed into ceramic components. Nano-sized ceramic particles are formed from the green body produced by methods for making bulk, dense composite ceramics. The resulting ceramic components have a very smooth surface and are fully dense, not porous as ceramic components from the sol-gel process. 1. A polymer derived ceramic (PDC) particle , wherein the particle material is derived from at least one of a binary PDC system , a ternary PDC system or a quaternary PDC system formed in a spraying process for producing bulk ceramic components from an agglomeration of partially cured polymer ceramic precursor resin material , comprising:a plurality of partially-cured globules of polymer ceramic precursor material co-sprayed with a plurality of powder particles that are functional material fillers in the structure of the partially-cured globules of polymer ceramic precursor material that is subsequently fully cured, chemically bonded together, then fired to produce a uniform, fully-dense, single continuous ceramic part having a particle size of approximately 1.2 mm to approximately 300 mm in diameter.2. The polymer derived ceramic (PDC) particle of claim 1 , wherein the binary PDC system is at least one of boron nitride (BN) or silicon carbide (SiC).3. The polymer ...

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Номер записи: 68
10-02-2022 дата публикации

METHODS FOR MANUFACTURING OR REINFORCING CARBON-CONTAINING GLASS MATERIALS

Номер: US20220041498A1
Автор: Lanning Bruce, Stowell Michael W.
Принадлежит: Lyten, Inc.

Methods for manufacturing and/or reinforcing a carbon-containing glass material are disclosed. The method includes supplying a non-thermal equilibrium plasma including a plurality of positive charged gas particles and a plurality of ionized inert gas particles into a reaction chamber, and accelerating at least the plurality of positive charged gas particles through the reaction chamber based on application of an external electric potential to the non-thermal equilibrium plasma. The method includes bombarding a surface-to-air interface of the glass material with the accelerated positive charged gas particles and the ionized inert gas particles, and forming an interphase region in the glass material in response to the bombardment. The method includes forming a compressive stress layer in the glass material in response to the bombardment by at least the ionized inert gas particles. The compressive stress layer may be disposed between the interphase region and the surface-to-air interface of the carbon-containing glass material. 1. A method of reinforcing a carbon-containing glass material including a surface-to-air interface , the method comprising:supplying a non-thermal equilibrium plasma comprising a plurality of positive charged gas particles and a plurality of ionized inert gas particles into a reaction chamber;accelerating at least the plurality of positive charged gas particles through the reaction chamber based on application of an external electric potential to the non-thermal equilibrium plasma;bombarding the surface-to-air interface of the carbon-containing glass material with the accelerated positive charged gas particles and the ionized inert gas particles;forming an interphase region in the carbon-containing glass material in response to the bombardment by the accelerated positive charged gas particles and the ionized inert gas particles, the interphase region having a plurality of voids formed therein and extending from the surface-to-air interface along ...

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Номер записи: 69
28-01-2021 дата публикации

Resin composition, optical fiber and method for manufacturing optical fiber

Номер: US20210024772A1
Автор: Katsushi Hamakubo
Принадлежит: Sumitomo Electric Industries Ltd

A resin composition includes a base resin containing a urethane (meth)acrylate oligomer, a monomer, and a photopolymerization initiator, and surface-modified inorganic oxide particles having an alkyl group having 1 or more and 8 or less carbon atoms or a phenyl group, wherein the content of the surface-modified inorganic oxide particles is 1% by mass or more and 60% by mass or less based on the total amount of the resin composition and the amount of surface modification on the surface-modified inorganic oxide particles is 0.15 mg/m 2 or more.

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Номер записи: 70
23-01-2020 дата публикации

OPTICAL FIBER RIBBON, OPTICAL FIBER CABLE, AND METHOD OF MANUFACTURING OPTICAL FIBER RIBBON

Номер: US20200026013A1
Автор: ISAJI Mizuki, Kaji Tomoaki, Murata Akira, Sajima Yoshie
Принадлежит: FUJIKURA LTD.

An optical fiber ribbon is formed by connecting a plurality of optical fiber colored core wires to each other with a connector formed of a UV curable resin. Each of the optical fiber colored core wires includes: a bare optical fiber; a primary layer that comprises a UV curable resin that covers the bare optical fiber; a secondary layer that comprises a UV curable resin that covers the primary layer; and a colored layer disposed outside the secondary layer and that comprises a colored UV curable resin. The primary layer has a Young's modulus that is greater than or equal to 75% of a saturated Young's modulus of the primary layer. 1. An optical fiber ribbon comprising:a plurality of optical fiber colored core wires that are connected to each other with a connector that comprises a UV curable resin, wherein a bare optical fiber;', 'a primary layer that comprises a UV curable resin that covers the bare optical fiber;', 'a secondary layer that comprises a UV curable resin that covers the primary layer; and', 'a colored layer disposed outside the secondary layer and that comprises a colored UV curable resin, and, 'each of the optical fiber colored core wires comprisesthe primary layer has a Young's modulus that is greater than or equal to 75% of a saturated Young's modulus of the primary layer.2. The optical fiber ribbon according to claim 1 , wherein the saturated Young's modulus of the primary layer is less than or equal to 0.88 MPa.3. The optical fiber ribbon according to claim 1 , wherein the Young's modulus of the primary layer is greater than or equal to 0.20 MPa and less than or equal to 0.72 MPa.4. The optical fiber ribbon according to claim 1 , wherein the colored layer has a Young's modulus that is greater than or equal to 700 MPa and less than or equal to 1400 MPa.5. The optical fiber ribbon according to claim 1 , wherein the secondary layer has a Young's modulus that is greater than or equal to 700 MPa and less than or equal to 1400 MPa.6. An optical fiber ...

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Номер записи: 71
10-02-2022 дата публикации

SEMICONDUCTOR CONTACT FORMATION

Номер: US20220045195A1
Автор: Imonigie Jerome A., Khandekar Anish A., LEE Yi Fang, NAKAMURA Yoshitaka, YANG Guangjun
Принадлежит:

Systems, methods and apparatus are provided for a semiconductor structure. An example method includes a method for forming a contact surface on a vertically oriented access devices. The method includes forming a first source/drain region and a second source/drain region vertically separated by a channel region, forming a sacrificial etch stop layer on a first side of the second source/drain region, wherein the channel region is in contact with a second side of the second source/drain region, forming a dielectric layer on a first side of the sacrificial etch stop layer, where the second source/drain region is connected to a second side of the sacrificial etch stop layer, removing the dielectric layer using a first etch process to expose the sacrificial etch stop layer, and removing the sacrificial etch stop layer using a second etch process to form a contact surface on the second source/drain region. 1. A method of forming a contact surface to a vertically oriented access device , comprising:forming a first source/drain region and a second source/drain region vertically separated by a channel region;forming a sacrificial etch stop layer on a first side of the second source/drain region, wherein the channel region is in contact with a second side of the second source/drain region;forming a dielectric layer on a first side of the sacrificial etch stop layer, wherein the second source/drain region is connected to a second side of the sacrificial etch stop layer;removing the dielectric layer using a first etch process to expose the sacrificial etch stop layer; andremoving the sacrificial etch stop layer using a second etch process to expose a contact surface on the second source/drain region.2. The method of claim 1 , wherein further comprising removing the sacrificial etch stop layer to expose the contact surface on the second source/drain region for an electrical connection to a storage node.3. The method of claim 1 , further comprising depositing a tungsten (W) ...

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Номер записи: 72
29-01-2015 дата публикации

REINFORCED GLASS ARTICLE AND TOUCH SENSOR INTEGRATED-TYPE COVER GLASS

Номер: US20150030816A1
Автор: KISHIKAWA Noriko, OZEKI Masao, TAMAI Kiyoshi, UEMURA Naoki
Принадлежит: Asahi Glass Company, Limited

The present invention provides a strengthened glass article, containing a glass sheet having: a first main surface; a second main surface that is opposite to the first main surface; and an end surface that connects the first main surface and the second main surface, in which the glass sheet is a strengthened glass sheet which comprises a compressive stress layer on each surface of the first main surface and the second main surface and a tensile stress layer on the end surface, in which the end surface of the strengthened glass sheet has an arithmetic average roughness Ra, satisfying Ra≦3 μm, and the end surface is provided with a protective layer, and in which the protective layer has a maximum thickness Tand the strengthened glass sheet has a thickness T, satisfying 50 μm Подробнее

Номер записи: 73
23-01-2020 дата публикации

PRE-CLEANING FOR ETCHING OF DIELECTRIC MATERIALS

Номер: US20200027746A1
Автор: Hori Masaru, Kobayashi Nobuyoshi, Tsutsumi Takayoshi, Vervuurt Rene Henricus Jozef
Принадлежит:

An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides. 1. A cyclic etch process , the process comprising:pre-cleaning a dielectric material to remove a surface oxide to provide a pre-cleaned dielectric surface; andetching the pre-cleaned dielectric surface.2. The process of claim 1 , wherein there is no break in vacuum between pre-cleaning and etching.3. The process of claim 2 , wherein etching comprises cyclic dry etching that comprises at least two rounds of dry etching.4. The process of claim 3 , wherein pre-cleaning is achieved by thermal reaction and/or plasma process.5. The process of claim 4 , wherein pre-cleaning is sufficient to achieve at least one of the following: a) superior etch profile control claim 4 , b) enhanced etch selectivity between different dielectric materials and oxides claim 4 , c) consistent etch thickness per cycle of cyclic dry etching claim 4 , d) cyclic etching of SiN claim 4 , SiC claim 4 , and SiCOH claim 4 , with selectivity of etching between each claim 4 , or e) reduced surface and sidewall roughness.6. (canceled)7. A cyclic etch process claim 4 , the process comprising:pre-cleaning a dielectric material to remove a surface oxide to provide a pre-cleaned dielectric surface, wherein pre-cleaning is achieved by thermal reaction and/or plasma process; andcyclic dry etching the pre-cleaned dielectric surface, wherein there is no break in vacuum between pre-cleaning and cyclic dry etching, wherein cyclic dry etching comprises one or more rounds of:{'sub': '2', 'providing a Hplasma; and'}providing a fluorine or chlorine containing plasma.8. A cyclic etch process claim 4 , the process comprising:pre-cleaning a dielectric ...

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Номер записи: 74
02-02-2017 дата публикации

Method and Apparatus Providing Increased UVLED Intensity and Uniform Curing of Optical-Fiber Coatings

Номер: US20170029326A1
Автор: Bob J. Overton
Принадлежит: Draka Comteq BV

A UVLED apparatus and a related method provide increased UVLED intensity to promote efficient curing of a coated glass fiber. The apparatus employs a plurality of UVLED sources, each UVLED source emitting an oscillating output of ultraviolet radiation. Typically, at least two of the UVLED sources have oscillating outputs of ultraviolet radiation that are out of phase with one another. During curing, an incompletely cured coating on a glass fiber absorbs electromagnetic radiation emitted from the UVLED sources.

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Номер записи: 75
01-02-2018 дата публикации

METHODS OF FABRICATING CHANNELS IN GLASS ARTICLES BY LASER DAMAGE AND ETCHING AND ARTICLES MADE THEREFROM

Номер: US20180029933A1
Автор: Na Zou Yuan-Yuan, Oliver James Guy, Wang Qingya, Wen Bin
Принадлежит:

A method for forming a glass article and the corresponding glass article are provided. The method for forming a glass article includes providing a glass substrate sheet, and translating a pulsed laser beam on the glass substrate sheet. The pulsed laser forms a laser damage region extending from first surface of the glass substrate sheet a mid-point of the glass substrate sheet. The method further includes contacting the glass substrate sheet with an etchant solution to form channels at the laser damage region, the channels having width and depth dimensions of less than 150 μm. The glass article includes a first surface, a second surface, a channel extending from the first surface to point between the first surface and the second surface. The channel has width and height dimensions less than about 150 μm. 1. A method of forming a glass article , comprising:providing a glass substrate sheet;translating a pulsed laser beam on the glass substrate sheet to form a laser damage region extending from a surface of the glass substrate sheet to a mid-point of the glass substrate sheet; andcontacting the glass substrate sheet with an etchant solution,wherein after the contacting of the glass substrate sheet with the etchant solution, the laser damage regions form channels having width and depth dimensions of less than 150 μm.2. The method of claim 1 , wherein the channels have a width from about 25 μm to about 125 μm.3. The method of claim 1 , wherein the channels have a depth from about 25 μm to about 125 μm.4. The method of claim 1 , wherein the channels have width and depth dimensions from about 30 μm to about 100 μm.5. The method of claim 1 , wherein a tolerance of the width and depth dimensions of the channels is less than about ±35 μm.6. The method of claim 1 , wherein a tolerance of the width and depth dimensions of the channels is less than about ±30 μm.7. The method of claim 1 , further comprising chemically strengthening the glass substrate sheet.8. The method of ...

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Номер записи: 76
17-02-2022 дата публикации

ARTICLES FOR CREATING HOLLOW STRUCTURES IN CERAMIC MATRIX COMPOSITES

Номер: US20220048825A1
Автор: Coons Timothy P., LI Tao, Weimer Michael James, Yang Xi
Принадлежит:

The present disclosure relates to a method of fabricating a ceramic composite components. The method may include providing at least a first layer of reinforcing fiber material which may be a pre-impregnated fiber. An additively manufactured component may be provided on or near the first layer. A second layer of reinforcing fiber, which may be a pre-impregnated fiber may be formed on top the additively manufactured component. A precursor is densified to consolidates at least the first and second layer into a densified composite, wherein the additively manufactured material defines at least one cooling passage in the densified composite component. 113-. (canceled)14. A method of fabricating a composite component comprising:at least partially covering a core having an organic binder and at least one of Si, SiO, and SiO2 with a reinforcing fiber material, wherein the core defines at least one cooling passage in the composite component.15. The method for fabricating a composite component of claim 14 , wherein the core is formed by:(a) contacting a cured portion of a workpiece with a liquid photopolymer;(b) irradiating a portion of the liquid photopolymer adjacent to the cured portion through a window contacting the liquid photopolymer;(c) removing the workpiece from the uncured liquid photopolymer; and(d) repeating steps (a)-(c) until the core is formed.16. The method of fabricating a composite component of claim 14 , further comprising:performing an infiltration process with a ceramic matrix precursor material, wherein the precursor is densified and consolidates at least a first and second layer of the reinforcing fiber material into a densified composite, wherein the core defines at least one cooling passage in the densified composite component.17. The method of fabricating a composite component of claim 14 , wherein the reinforcing fiber material is pre-impregnated with a ceramic matrix precursor material.18. The method of fabricating a composite component of claim 14 ...

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Номер записи: 77
31-01-2019 дата публикации

SYSTEM AND METHOD FOR MANUFACTURING OPTICAL FIBER

Номер: US20190031553A1
Автор: Clawson Jan, Paul-Gin Noah, Pickslay Nathanael, POWERS Geoffrey, Snyder Michael, White Robert
Принадлежит:

A system for precoating a preform for drawing optical fiber including a diameter sensor to determine a diameter of pulled optical fiber, a cooling system to cool the optical fiber once it is pulled from a furnace, a coating system to apply a coating to the optical fiber once it has cooled and an ultra-violet lamp to cure the coating. 1a diameter sensor to determine a diameter of pulled optical fiber;a cooling system to cool the optical fiber once it is pulled from a furnace;a coating system to apply a coating to the optical fiber once it has cooled; andan ultra-violet lamp to cure the coating.. A system for precoating a preform for drawing optical fiber, the system comprising: This application claims the benefit of U.S. Provisional Application No. 62/536,765 filed Jul. 25, 2017, the entirety of which is incorporated by reference.Embodiments relate to manufacture of fiber optic cable and, more particularly to, a system and a method for manufacturing exotic optical fiber in microgravity.Traditionally, fiber optic draw towers are multiple meters tall, with a total fiber path over 3 meters. This allows for fiber to completely cool before being coated, and makes control much easier. Further, the entire system is open, with human hands used at multiple stages for miscellaneous tasks. Most earth-based systems work by having the preform ‘dropped’ after softening in the furnace.Exotic optical fiber, such as the Fluoride-based fiber ZBLAN, theoretically provides 10-100 times better attenuation and significantly broader transmission spectrum, compared to traditional silica fiber. The term “ZBLAN” is an abbreviation based its composition, ZrF—BaF—LaF—AlF—NaF. ZBLAN. ZBLAN may be used to enable high performance fiber lasers, more capable medical equipment such as laser scalpels and endoscopes, supercontinuum light sources, more sensitive sensors for the aerospace and defense industries, and significantly higher bandwidth long-haul telecommunications connections. ZBLAN optical ...

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Номер записи: 78
30-01-2020 дата публикации

METHOD FOR PRODUCING SILICON-CARBIDE-BASED COMPOSITE

Номер: US20200031722A1
Автор: SOEDA Haruhiko, UDA Michimasa, Yamauchi Hiroshi
Принадлежит: IHI AEROSPACE CO., LTD.

A method for producing a silicon-carbide-based composite. In the production of a silicon-carbide-based composite comprising a carbon-fiber-reinforced/silicon carbide composite (a C/SiC composite) or a silicon-carbide-fiber-reinforced/silicon carbide composite (a SiC/SiC composite), a film boiling method is carried out, using an organosilicon polymer having a chlorine-free polysilane skeleton and/or a chlorine-free polycarbosilane skeleton. The organosilicon polymer is in a liquid form at room temperature. The molar ratio of Si and C in the matrix of the C/SiC composite or the SiC/SiC composite is Si:C=1:1.08 to 1:1.43. 1. A method for producing a silicon-carbide-based composite , wherein in the production of a silicon-carbide-based composite comprising a carbon-fiber-reinforced/silicon carbide composite (a C/SiC composite) or a silicon-carbide-fiber-reinforced/silicon carbide composite (a SiC/SiC composite) , a film boiling method is carried out using an organosilicon polymer having a chlorine-free polysilane skeleton and/or a chlorine-free polycarbosilane skeleton.2. The method for producing a silicon-carbide-based composite according to claim 1 , wherein the organosilicon polymer is in a liquid form at room temperature.3. The method for producing a silicon-carbide-based composite according to claim 1 , wherein a composition ratio (molar ratio) of Si and C in a matrix of the C/SiC composite or the SiC/SiC composite is Si:C=1:1.08 to 1:1.43.4. The method for producing a silicon-carbide-based composite according to claim 2 , wherein a composition ratio (molar ratio) of Si and C in a matrix of the C/SiC composite or the SiC/SiC composite is Si:C=1:1.08 to 1:1.43. The present invention relates to a method for producing a silicon-carbide-based composite, and more particularly relates to a method for producing a silicon-carbide-based composite that is capable of producing a silicon carbide composite cleanly and with high production efficiency.Conventionally, a silicon- ...

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Номер записи: 79
01-02-2018 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20180033702A1
Автор: OURA Takehiro
Принадлежит:

Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over amain surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored. 1. A manufacturing method of a semiconductor device , comprising the steps of:(a) forming an electrode pad over a main surface of a semiconductor wafer and a barrier metal film over the electrode pad;(b) forming an insulating member over the main surface of the semiconductor wafer so as to cover the electrode pad;wherein the insulating member comprises an inorganic insulating film covering the barrier metal film and an organic insulating film covering the inorganic insulating film;(c) forming an opening portion where a surface of the electrode pad is exposed in the insulating member by processing the insulating member by a dry etching method using an etching gas including a halogen-based gas;(d) performing wafer test;(e) after the step (d), forming an oxide film having a thickness of 2 nm to 6 nm over the exposed surface of the electrode pad and partially removing halogen by performing a heat treatment in a range of 200° C. to 300° C. in an atmosphere including oxygen for at least 30 minutes;(f) after the step (e), storing the semiconductor wafer.2. The manufacturing method of a semiconductor device according to claim 1 , wherein a halogen residual amount is reduced by 20% by performing ...

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Номер записи: 80
17-02-2022 дата публикации

Ion Stratification Using Bias Pulses of Short Duration

Номер: US20220051875A1
Автор: Voronin Sergey
Принадлежит:

A plasma processing apparatus includes a plasma processing chamber configured to contain a plasma comprising a plasma sheath, ions of a first species, and ions of a second species, a substrate disposed in the plasma processing chamber, and a short pulse generator coupled to the substrate, the short pulse generator configured to generate a pulse train of negative bias pulses. Each of the negative bias pulses has a pulse duration less than 10 μs. A pulse delay between successive negative bias pulses is at least five times the pulse duration. The first species has a first mass and the second species has a second mass less than the first mass. The pulse train spatially stratifies the ions of the first species and the ions of the second species in the plasma sheath. 1. A plasma processing apparatus comprising:a plasma processing chamber configured to contain a plasma comprising a plasma sheath, ions of a first species, and ions of a second species, wherein the first species has a first mass and the second species has a second mass less than the first mass;a substrate disposed in the plasma processing chamber; anda short pulse generator coupled to the substrate, the short pulse generator configured to generate a pulse train of negative bias pulses,wherein each of the negative bias pulses has a pulse duration less than 10 μs,wherein a pulse delay between successive negative bias pulses is at least five times the pulse duration, andwherein the pulse train spatially stratifies the ions of the first species and the ions of the second species in the plasma sheath.2. The plasma processing apparatus of claim 1 , wherein the pulse duration is less than about 250 ns.3. The plasma processing apparatus of claim 1 , wherein the pulse delay is greater than about 10 μs.4. The plasma processing apparatus of claim 1 , wherein the pulse train further comprises positive bias pulses immediately following each of the negative bias pulses claim 1 , the pulse delay between successive negative ...

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Номер записи: 81
01-05-2014 дата публикации

GLASS PACKAGING ENSURING CONTAINER INTEGRITY

Номер: US20140120279A1
Автор: DeMartino Steven Edward, Schaut Robert Anthony
Принадлежит: CORNING INCORPORATED

A strengthened glass container or vessel such as, but not limited to, vials for holding pharmaceutical products or vaccines in a hermetic and/or sterile state. The strengthened glass container undergoes a strengthening process that produces compression at the surface and tension within the container wall. The strengthening process is designed such that the tension within the wall is great enough to ensure catastrophic failure of the container, thus rendering the product unusable, should sterility be compromised by a through-wall crack. The tension is greater than a threshold central tension, above which catastrophic failure of the container is guaranteed, thus eliminating any potential for violation of pharmaceutical integrity. 1. A container comprising a glass , the container having a thickness and first surface and a second surface , wherein the glass has a first region under a compressive stress , the first region extending from at least one of the first surface and the second surface to a depth of layer in the glass , and a second region under a central tension , the second region extending from the depth of layer , and wherein the central tension is greater than or equal to a threshold tensile stress of about 15 MPa.2. The container of claim 1 , wherein the threshold tensile stress is sufficient to allow self-propagation of a crack front through the thickness from the first surface to the second surface.3. The container of claim 2 , wherein the self-propagation of the crack front from the first surface to the second surface further comprises bifurcation of the crack front across at least the first surface.4. The container of claim 2 , wherein the self-propagation of the crack front from the first surface to the second surface further comprises self-propagation of the crack front laterally across at least the first surface claim 2 , and wherein the self-propagation of the crack front renders the container unsuitable for its intended use.5. The container of claim ...

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Номер записи: 82
17-02-2022 дата публикации

PREPARATION METHOD FOR ACCURATE PATTERN OF INTEGRATED CIRCUIT

Номер: US20220051903A1
Автор: WU HANMING
Принадлежит: Etownip Microelectronics (Beijing) Co.,LTD.

A method for preparing precise pattern of integrated circuits, which comprises the following steps: (S1) preparing a large pitch trench or circular through-hole structure with a hard mask in a first dielectric layer by lithography and etching; (S2) forming micro trench on the hard mask of the second dielectric layer at the bottom side wall of the trench or circular through-hole structure by plasma etching process; (S3) removing the first dielectric layer; (S4) opening the hard mask of the second dielectric layer at the micro trench formed on the hard mask of the second dielectric layer by plasma etching process; (S5) small pitch trench or circular through holes are prepared in the second dielectric layer. 1. A method for preparing precise pattern of integrated circuit , comprising the steps:(S1) fabricating a plurality of first pitch trench or circular through-hole structures with a first hard mask in a first dielectric layer by lithography and etching;(S2) forming convex trenches on a second hard mask of a second dielectric layer at a bottom side wall of the plurality of first pitch trench or circular through-hole structures by a plasma etching process;(S3) removing the first dielectric layer;(S4) opening the second hard mask of the second dielectric layer at the convex trenches;(S5) preparing a plurality of second pitch trench or circular through-hole structures in the second dielectric layer.2. The method of claim 1 , wherein the first dielectric layer and the second dielectric layer are SiO claim 1 , SiN or other non-conductors.3. The method of claim 1 , wherein each of aspect ratio of the trench or circular through hole structures is greater than or equal to 2.4. The of claim 1 , wherein plasma with high density and high ionization rate is used for etching in step (S2) claim 1 , and an etching gas used in the plasma etching process is fluorine-based discharge gas; the fluorine-based discharge gas is a mixture of fluorine-based gas and argon gas.5. The method of ...

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Номер записи: 83
01-05-2014 дата публикации

HIGHLY SELECTIVE SPACER ETCH PROCESS WITH REDUCED SIDEWALL SPACER SLIMMING

Номер: US20140120728A1
Автор: MORI Takuya, OHTAKE Hirota, RALEY Angélique Denise
Принадлежит: TOKYO ELECTRON LIMITED

A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure. The spacer etch process sequence may include oxidizing an exposed surface of the spacer material to form a spacer oxidation layer, performing a first etching process to anisotropically remove the spacer oxidation layer from the spacer material at the substrate region on the substrate and the spacer material at the capping region of the gate structure, and performing a second etching process to selectively remove the spacer material from the substrate region on the substrate and the capping region of the gate structure to leave behind the spacer sidewall on the sidewall of the gate structure. 1. A method for performing a spacer etch , comprising:providing a substrate having a spacer material conformally applied over a gate structure;exposing an exposed surface of said spacer material to an oxygen-containing environment to elevate an oxygen content in said spacer material; andperforming a spacer etch process sequence to partially and selectively remove said spacer material from a capping region of said gate structure and a substrate region on said substrate adjacent a base of said gate structure, while retaining a spacer sidewall positioned along a sidewall of said gate structure.2. The method of claim 1 , wherein said spacer material comprises silicon nitride claim 1 , silicon carbide claim 1 , or silicon carbonitride.3. The method of claim 2 , wherein said spacer material conformally applied over said gate structure has a thickness less than or equal to about 10 nanometers (nm).4. The method of claim 1 , wherein said oxygen ...

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Номер записи: 84
11-02-2016 дата публикации

Curing Apparatus Employing Angled UVLEDs

Номер: US20160038970A1
Автор: Denis Molin
Принадлежит: Draka Comteq BV

A UVLED apparatus (and related system and method) provide efficient curing of an optical-fiber coating on a drawn glass fiber. The apparatus employs one or more UVLEDs that emit electromagnetic radiation into a curing space. An incompletely cured optical-fiber coating, which is formed upon a glass fiber, absorbs emitted and reflected electromagnetic radiation to promote efficient curing.

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Номер записи: 85
04-02-2021 дата публикации

Methods and apparatus for predicting glass dynamics

Номер: US20210034799A1
Автор: Adam James Ellison, Douglas Clippinger Allan, John Christopher Mauro, Marcel Potuzak, Timothy James Kiczenski, Xiaoju GUO
Принадлежит: Corning Inc

Computer-implemented methods and apparatus are provided for predicting/estimating (i) a non-equilibrium viscosity for at least one given time point in a given temperature profile for a given glass composition, (ii) at least one temperature profile that will provide a given non-equilibrium viscosity for a given glass composition, or (iii) at least one glass composition that will provide a given non-equilibrium viscosity for a given time point in a given temperature profile. The methods and apparatus can be used to predict/estimate stress relaxation in a glass article during forming as well as compaction, stress relaxation, and/or thermal sag or thermal creep of a glass article when the article is subjected to one or more post-forming thermal treatments.

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Номер записи: 86
09-02-2017 дата публикации

GAS-PHASE SILICON OXIDE SELECTIVE ETCH

Номер: US20170040180A1
Автор: Ingle Nitin K., Wang Anchuan, XU Jingjing
Принадлежит: Applied Materials, Inc.

A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia. 1. A method of etching a patterned substrate , the method comprising:placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed silicon oxide portion and an exposed silicon nitride portion;flowing anhydrous hydrogen fluoride into the substrate processing region through a first channel comprising holes which open into the substrate processing region but not directly into the remote region;flowing a nitrogen-and-hydrogen-containing precursor into a remote region fluidly coupled to the substrate processing region through a dual-channel showerhead, wherein the nitrogen-and-hydrogen-containing precursor flows from the remote region to the substrate processing region through a second channel comprising through-holes through the dual-channel showerhead;combining the anhydrous hydrogen fluoride with the nitrogen-and-hydrogen-containing precursor within the substrate processing region, wherein the anhydrous hydrogen fluoride and the nitrogen-and-hydrogen-containing precursor do not encounter each other until after passing into the substrate processing region;dry etching the ...

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Номер записи: 87
09-02-2017 дата публикации

Methods of Forming Nanosheets on Lattice Mismatched Substrates

Номер: US20170040209A1
Автор: Obradovic Borna, RODDER Mark, Wang Wei-E
Принадлежит:

Methods of forming nanosheets for a semiconductor device are provided including providing a silicon on insulator (SOI) handle wafer, the SOT handle wafer including a silicon layer and a dielectric layer on the silicon layer; providing a first donor wafer; bonding the SOI handle wafer and the first donor wafer together to provide a bonded structure; debonding the bonded structure to provide an intermediate wafer including a plurality of silicon or non-silicon nano sheets and a plurality of dielectric layers alternately stacked; and bonding the intermediate wafer to a second donor wafer to provide a final wafer including a plurality of silicon or non-silicon layers and a plurality of dielectric layers alternately stacked, wherein the final wafer includes at least one more pair of silicon or non-silicon and dielectric layers than the intermediate wafer. 1. A method of forming nanosheets for a semiconductor device , the method comprising:providing a silicon on insulator (SOI) handle wafer, the SOT handle wafer including a silicon layer and a dielectric layer on the silicon layer;providing a first donor wafer;bonding the SOI handle wafer and the first donor wafer together to provide a bonded structure;debonding the bonded structure to provide an intermediate wafer including a plurality of silicon or non-silicon nanosheets and a plurality of dielectric layers alternately stacked; andbonding the intermediate wafer to a second donor wafer to provide a final wafer including a plurality of silicon or non-silicon nanosheets and a plurality of dielectric layers alternately stacked, wherein the final wafer includes at least one more pair of silicon or non-silicon and dielectric layers than the intermediate wafer.2. The method of claim 1 , further comprising:providing a mask on a surface of the final wafer; andetching the final wafer according to the mask to provide vertical trenches therein.3. The method of claim 2 , wherein etching is followed by removing the plurality of ...

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Номер записи: 88
09-02-2017 дата публикации

METHOD FOR PRODUCING AN SGT-INCLUDING SEMICONDUCTOR DEVICE

Номер: US20170040329A1
Автор: HARADA Nozomu, MASUOKA Fujio
Принадлежит:

A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing moisture is formed so as to make contact with the oxide layer and lie at an intermediate position of the Si pillar. A part of the oxide film in contact with the hydrogen fluoride ion diffusion layer is etched with hydrogen fluoride ions generated from hydrogen fluoride gas supplied to the hydrogen fluoride ion diffusion layer and an opening is thereby formed on the outer periphery of the Si pillar. 1. A method of producing an SGT-including semiconductor device , the method comprising:a semiconductor-pillar-forming step of forming a semiconductor pillar on a substrate;a first-impurity-region-forming step of forming a first impurity region below the semiconductor pillar;a second-impurity-region-forming step of forming a second impurity region in the semiconductor pillar so that the second impurity region is distanced from and above the first impurity region;a first-gate-insulating-layer-forming step of forming a first gate insulating layer on an outer periphery of the semiconductor pillar and at least a portion of the semiconductor pillar located between the first impurity region and the second impurity region;a first-gate-conductor-layer-forming step of forming a first gate conductor layer on an outer periphery of the first gate insulating layer;a first-insulating-layer-forming step of forming a first insulating layer so that the first insulating layer covers the semiconductor pillar and the first gate conductor layer;a second-insulating-layer-forming step of forming a second insulating layer on the substrate and on an outer periphery of the first insulating layer, the second insulating layer being shorter than the semiconductor pillar;a hydrogen-fluoride-ion- ...

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Номер записи: 89
12-02-2015 дата публикации

LASER CONTROLLED ION EXCHANGE PROCESS AND GLASS ARTICLES FORMED THEREFROM

Номер: US20150044445A1
Автор: Garner Sean Matthew, Li Ming-Jun, Li Xinghua
Принадлежит:

A method for forming ion-exchanged regions in a glass article by contacting an ion source with at least one surface of the glass article, forming a first ion-exchanged region in the glass article by heating a first portion of the glass article with a laser, and forming a second ion-exchanged region in the glass article. Characteristics of the first ion-exchanged region may be different from characteristics of the second ion-exchanged region. A depth of the ion-exchanged region may be greater than 1 μm. A glass article including a first ion-exchanged region, and a second ion-exchanged region having different characteristics from the first ion-exchanged region. The thickness of the glass article is less than or equal to about 0.5 mm. 1. A method for forming ion-exchanged regions in a glass article , the method comprising:contacting an ion exchange source with at least one surface of the glass article;forming a first ion-exchanged region in the glass article by heating a first portion of the glass article with a laser; andforming a second ion-exchanged region in the glass article,wherein at least one characteristic of the first ion-exchanged region is different from a characteristic of the second ion-exchanged region.2. The method of claim 1 , wherein a depth of the first ion-exchanged region is different than a depth of the second ion-exchanged region.3. The method of claim 1 , wherein a concentration of ions at an edge of the glass article is different than a concentration of ions at a center of the glass article.4. The method of claim 1 , wherein a depth of each of the first and second ion-exchanged regions is from about 5 μm to about 60 μm.5. The method of claim 1 , wherein the glass article does not contain any alkali metal ions.6. The method of claim 1 , wherein the ion exchange source is selected from the group consisting of KNO claim 1 , NaNO claim 1 , and AgNO.7. The method of claim 1 , wherein the laser is selected from the group consisting of a CO laser ...

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Номер записи: 90
12-02-2015 дата публикации

REMOVING METHOD

Номер: US20150044879A1
Автор: Liao Chin-I, TUNG Yu-Cheng
Принадлежит: UNITED MICROELECTRONICS CORP.

A removing method including the following steps. A substrate is transferred into an etching machine, wherein the substrate has a material layer formed thereon. A cycle process is performed. The cycle process includes performing an etching process to remove a portion of the material layer, and performing an annealing process to remove a by-product generated by the etching process. The cycle process is repeated at least one time. The substrate is transferred out of the etching machine. In the removing method of the invention, the cycle process is performed multiple times to effectively remove the undesired thickness of the material layer and reduce the loading effect. 1. A removing method , comprising:transferring a substrate into an etching machine, wherein the substrate has a material layer formed thereon;performing a cycle process, comprising:performing an etching process to remove a portion of the material layer; andperforming an annealing process to remove a by-product generated by the etching process;repeating the cycle process at least one time; andtransferring the substrate out of the etching machine.2. The removing method of claim 1 , wherein the cycle process is repeated at least two times.3. The removing method of claim 1 , wherein an etching gas of the etching process comprises NFand NH claim 1 , and a volume flow rate ratio of NFto NHis greater than 1/10 and less than ½.4. The removing method of claim 1 , wherein a radio frequency of the etching process is from 10 kW to 40 kW.5. The removing method of claim 1 , wherein an etching rate of the etching process is from 0.5 angstrom/second to 1.5 angstrom/second.6. The removing method of claim 1 , wherein a gas introduced to the annealing process comprises Hand Ar.7. The removing method of claim 1 , wherein a temperature of the annealing process is from 150° C. to 500° C.8. The removing method of claim 1 , wherein the material layer is a silicon oxide layer.9. The removing method of claim 8 , wherein the ...

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Номер записи: 91
24-02-2022 дата публикации

MICROSTRUCTURED MULTICORE OPTICAL FIBRE (MMOF), A DEVICE AND THE FABRICATION METHOD OF A DEVICE FOR INDEPENDENT ADDRESSING OF THE CORES OF MICROSTRUCTURED MULTICORE OPTICAL FIBRE

Номер: US20220057570A1
Автор: Holdynski Zbigniew, Murawski Michal, Napierala Marek, Nasilowski Tomasz, Ostrowski Lukasz, Pawlik Katarzyna, Slowikowski Mateusz, Stepien Karol, Szostkiewicz Lukasz, Szymanski Michal, Tenderenda Tadeusz, Ziolowicz Anna Katarzyna
Принадлежит:

A microstructured multicore optical fibre (MMOF) includes a cladding in which a plurality of basic cells are formed that run along the MMOF. Each of the basic cells includes a core, and at least one of the basic cells is surrounded by a plurality of longitudinal areas that run parallel to the core along the MMOF and are arranged in a hexagonal arrangement around the core. The longitudinal areas are spaced by a lattice constant Λ. Sides of the hexagon can be shared with adjacent basic cells. 1. A microstructured multicore optical fibre suitable for manufacturing with stack-and-draw method , comprising:an outer cladding surrounding a microstructure area in which, at least two basic cells are embedded;wherein, each of said at least two basic cells have a core fabricated of glass, doped silica glass, or of polymer, and longitudinal areas separating said core from other cores of the at least two basic cells, and wherein the at least two basic cells are embedded in a matrix of glass;wherein said longitudinal areas have a refractive index that is lower than a refractive index of the matrix of the glass;wherein at least one basic cell of the at least two basic cells comprises twelve longitudinal areas that are spaced by a lattice constant Λ and located on vertices and middle points of sides of a hexagon, the hexagon having sides of a length that is double the lattice constant Λ, and having a center at the core of the at least one basic cell such that the twelve longitudinal areas surround the core and define an internal cladding between the longitudinal areas and the core; andwherein said at least two basic cells are positioned such that the at least one basic cell of the at least two basic cells shares longitudinal areas located on the vertices or middle points of a side of said hexagon with at least one adjacent one of the at least two basic cells such that a distance between the cores of the at least one of the at least two basic cells and the adjacent one of the at ...

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Номер записи: 92
19-02-2015 дата публикации

METHODS OF MANUFACTURING GLASS ARTICLES USING ANISOTHERMAL TEMPERATURE PROFILES

Номер: US20150047393A1
Автор: Luo Weiwei, Rai Rohit, Ukrainczyk Ljerka, Zheng Zheming, Zoubi Sam Samer
Принадлежит:

According to one embodiment, a method of manufacturing a glass article having a three-dimensional shape includes heating a glass article blank to a temperature above a setting temperature and coupling the glass article blank to an open-faced mold. The open-faced mold includes a molding region that has a three-dimensional shape that generally corresponds to the shape of the glass article and has an anisothermal temperature profile within the molding region. The method further includes maintaining an anisothermal temperature profile along the glass article blank and cooling the glass article blank while the glass article blank is coupled to the molding region of the open-faced mold to set the shape of the glass article. 1. A method of manufacturing a glass article having a three-dimensional shape comprising:heating a glass article blank to a temperature above a setting temperature;controlling a first portion of a molding region of an open-faced mold to have a first temperature and a second portion of the molding region of the open-faced mold to have a second temperature effective to generate an anisothermal temperature profile within the molding region, the molding region having a three-dimensional shape that generally corresponds to the shape of the glass article;coupling the glass article blank to the open-faced mold;maintaining an anisothermal temperature profile along the glass article blank; andcooling the glass article blank while coupled to the molding region of the open-faced mold to set the shape of the glass article.2. The method of claim 1 , further comprising cooling a portion of the open-faced mold proximate to the molding region with a fluid cooling stream.3. The method of claim 1 , wherein when the glass article blank is being cooled claim 1 , a thermal gradient is maintained through a thickness of the glass article blank.4. The method of claim 1 , wherein when the glass article blank is being cooled claim 1 , a thermal gradient is maintained across an ...

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Номер записи: 93
15-02-2018 дата публикации

Machinable and chemically toughenable glass ceramic

Номер: US20180044225A1
Автор: Chong Wang, Huiyan Fan, José ZIMMER, Junming Xue, Wenliang PING
Принадлежит: Schott Glass Technologies Suzhou Co Ltd

The present invention is directed to a kind of machinable glass ceramic which can be chemically toughened. The machinable and chemically toughenable glass ceramic, which comprises, as represented by weight percentage based on the following compositions, 25-75 wt % of SiO 2 , 6-30 wt % of Al 2 O 3 , 0.1-30 wt % of Na 2 O, 0-15 wt % of K 2 O, 0-30 wt % of B 2 O 3 , 4-35 wt % of MgO, 0-4 wt % of CaO, 1-20 wt % of F, 0-10 wt % of ZrO 2 , 0.1-10 wt % of P 2 O 5 , 0-1 wt % of CeO 2 and 0-1 wt % of SnO 2 , wherein P 2 O 5 +Na 2 O>3 wt %, and Al 2 O 3 +Na 2 O+P 2 O 5 >17 wt %. Mica crystalline phase can be formed in the glass ceramic and the glass ceramic can be chemically toughened by one step, two steps or multiple steps with depth of K-ion layer of at least 15 μm and surface compress stress of at least 300 MPa. The profile on depth of the ion exchange layer follows the complementary error function. Hardness can be improved by at least 20% after chemical toughening. The dimension deviation ratio is less than 0.06% by ion-exchanging.

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Номер записи: 94
15-02-2018 дата публикации

Fiber Bragg Gratings in Carbon-Coated Optical Fibers and Techniques for Making Same

Номер: US20180044234A1
Автор: Hokansson Adam, Kudelko David J., Li Yaowen, Ng Joanna Y., Simoff Debra A.
Принадлежит: OFS FITEL, LLC

A technique is described for fabricating one or more optical devices in a carbon-coated optical fiber. A photosensitive optical fiber is provided having a hermetic carbon coating. Further provided is a laser having a beam output that is configured to inscribe one or more refractive index modulations into the optical fiber through the hermetic carbon layer while leaving the hermetic carbon layer intact. The laser is used to inscribe one or more optical devices into the optical fiber through the hermetic carbon layer. 1. A method for fabricating one or more optical devices in a carbon-coated optical fiber , comprising:providing a photosensitive optical fiber having a hermetic carbon coating and a secondary outer coating over the hermetic carbon coating, wherein each of the hermetic carbon coating and the secondary outer coating has a respective absorption of light at a given wavelength that allows a laser operating at the given wavelength to inscribe one or more optical devices into the fiber through the secondary outer coating and the hermetic carbon coating, while leaving them intact;providing a laser having a beam output that is configured to inscribe one or more refractive index modulations into the optical fiber through the hermetic carbon layer and the secondary outer coating while leaving the hermetic carbon layer and the secondary outer coating intact; andusing the laser to inscribe one or more optical devices into the optical fiber through the hermetic carbon layer and the secondary outer coating.2. The method of claim 1 ,wherein the one or more optical devices comprise one or more fiber gratings.3. The method of claim 2 , wherein a phase mask technique is used to inscribe the one or more gratings into the fiber.4. The method of claim 2 , wherein a holographic technique is used to inscribe the one or more gratings into the fiber.5. The method of claim 1 ,wherein the one or more optical devices are written into the fiber during draw, subsequent to the ...

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Номер записи: 95
16-02-2017 дата публикации

METHODS FOR TREATING REINFORCING FIBER AND TREATED REINFORCING FIBERS

Номер: US20170044709A1
Автор: David Moses M., Kirk Seth M., Miller Craig A., Parkar Zeba, Poirier Derrick M.
Принадлежит:

Surface treated fibers and methods of treating individual fiber surfaces. One exemplary method includes subjecting a precursor gas to a plasma-generating discharge within an atmospheric plasma generator to generate a reactive species flow including reactive oxygen species, and exposing a reinforcing fiber to the reactive species flow for a treatment time sufficient to functionalize the reinforcing fiber with oxygen such that at least one of a composite matrix interfacial adhesion of the reinforcing fiber or a composite matrix interfacial strength of the reinforcing fiber, increases. The precursor gas preferably includes a carrier gas and an oxidative gas, the oxidative gas being contained in an amount of up to 25% by volume of the precursor gas. 1. A method for treating reinforcing fiber , the method comprising:(a) transporting a precursor gas comprising a carrier gas and an oxidative gas comprising up to 25% by volume of the precursor gas to an atmospheric plasma-generating discharge within an atmospheric plasma generator to generate a reactive species flow, the reactive species flow comprising reactive oxygenated species produced from the oxidative gas; and(b) exposing an untreated reinforcing fiber to the reactive species flow for a treatment time sufficient to functionalize the reinforcing fiber with oxygen such that at least one of a composite matrix interfacial adhesion of the treated reinforcing fiber or a composite matrix interfacial strength of the treated reinforcing fiber, increases.2. The method of claim 1 , wherein the untreated fiber has a sizing material on at least a portion of an exterior surface of the untreated fiber claim 1 , and further wherein the treated fiber is substantially free of the sizing material.3. The method of claim 1 , wherein exposing the untreated reinforcing fiber to the reactive species flow further comprises maintaining the reinforcing fiber at a distance from the atmospheric plasma-generating discharge so that the reinforcing ...

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Номер записи: 96
19-02-2015 дата публикации

D1369 D RADIATION CURABLE SECONDARY COATING FOR OPTICAL FIBER

Номер: US20150050000A2
Автор: CATTRON Wendell Wayne, MURPHY Edward J, SCHMID Steven R., TORTORELLO Anthony Joseph, ZIMMERMAN John M
Принадлежит:

A new radiation curable Secondary Coating for optical fibers is described and claimed wherein said composition comprises a Secondary Coating Oligomer Blend, which is mixed with a first diluent monomer; a second diluent monomer; optionally, a third diluent monomer; an antioxidant; a first photoinitiator; a second photoinitiator; and optionally a slip additive or a blend of slip additives; wherein said Secondary Coating Oligomer Blend comprises: 1. A Radiation Curable Secondary Coating Composition , wherein said composition comprisesA) a Secondary Coating Oligomer Blend, which is mixed withB) a first diluent monomer;C) a second diluent monomer;D) optionally, a third diluent monomer;E) an antioxidant;F) a first photoinitiator;G) a second photoinitiator; andH) optionally a slip additive or a blend of slip additives;wherein said Secondary Coating Oligomer Blend comprises:α) an Omega Oligomer; andβ) an Upsilon Oligomer;wherein said Omega Oligomer is synthesized by the reaction ofα1) a hydroxyl-containing (meth)acrylate;α2) an isocyanate;α3) a polyether polyol; andα4) tripropylene glycol; in the presence ofα5) a polymerization inhibitor; andα6) a catalyst;to yield the Omega Oligomer;wherein said catalyst is selected from the group consisting of copper naphthenate, cobalt naphthenate, zinc naphthenate, triethylamine, triethylenediamine, 2-methyltriethyleneamine, dibutyl tin dilaurate; metal carboxylates, including, but not limited to: organobismuth catalysts such as bismuth neodecanoate; zinc neodecanoate; zirconium neodecanoate; zinc 2-ethylhexanoate; sulfonic acids, including but not limited to dodecylbenzene sulfonic acid, methane sulfonic acid; amino or organo-base catalysts, including, but not limited to: 1,2-dimethylimidazole and diazabicyclooctane; triphenyl phosphine; alkoxides of zirconium and titanium, including, but not limited to Zirconium butoxide and Titanium butoxide; and Ionic liquid phosphonium salts; and tetradecyl(trihexyl) phosphonium chloride;wherein ...

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Номер записи: 97
15-02-2018 дата публикации

SELF-ALIGNED SINGLE DUMMY FIN CUT WITH TIGHT PITCH

Номер: US20180047575A1
Автор: Cheng Kangguo, CHI Cheng, Liu Chi-chun, Xu Peng
Принадлежит:

A method of forming a semiconductor device and resulting structures having a dummy semiconductor fin removed from within an array of tight pitch semiconductor fins by forming a first spacer including a first material on a substrate; forming a second spacer including a second material on the substrate, the second spacer adjacent to the first spacer; and applying an etch process to the first spacer and the second spacer; wherein the etch process removes the first spacer at a first etch rate; wherein the etch process removes the second spacer at a second etch rate; wherein the first etch rate is different than the second etch rate. 1. A method for forming a semiconductor device , the method comprising:forming a first spacer comprising a first material on a substrate;depositing a block copolymer on a sidewall of the first spacer, the block copolymer assembling into alternating regions of a first polymer and a second polymer after a directed self-assembly (DSA);removing the first polymer such that the second polymer defines a second spacer comprising a second material on the substrate, the second spacer adjacent to the first spacer; andapplying an etch process to the first spacer and the second spacer;wherein the etch process removes the first spacer at a first etch rate;wherein the etch process removes the second spacer at a second etch rate;wherein the first etch rate is different than the second etch rate.2. The method of claim 1 , wherein the first etch rate is greater than the second etch rate and the second etch rate is zero or effectively zero claim 1 , such that a portion of the second material remains after the first material is removed during the etch process.3. The method of claim 1 , wherein forming the first spacer further comprises:forming a sacrificial material layer overlying the substrate;depositing a hard mask layer on top of the substrate, the hard mask layer between the substrate and the sacrificial material layer;removing portions of the sacrificial ...

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Номер записи: 98
15-02-2018 дата публикации

Manufacturing Method of Semiconductor Device

Номер: US20180047579A1
Автор: AKAISHI Masatoshi, HANAWA Toshikazu, Horikoshi Kotaro, Kikuchi Yuji
Принадлежит:

In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CFgas and CHFgas as its components. 115-. (canceled)16. A manufacturing method of a semiconductor device , comprising the steps of:(a) forming a carbon-added silicon oxide film in a main surface of a semiconductor wafer;(b) forming a first photoresist film over the carbon-added silicon oxide film so as to cover the carbon-added silicon oxide film;(c) transferring a predetermined pattern to the first photoresist film by photolithography such that a first resist mask pattern is formed;{'sub': 4', '8', '2, '(d) after the step (c), subjecting the carbon-added silicon oxide film to a dry etching process by using mixed gas containing at least Ar gas, CFgas, and Ngas as its components;'}(e) forming a second photoresist film over the carbon-added silicon oxide film so as to cover the carbon-added silicon oxide film;(f) transferring a predetermined pattern to the second photoresist film by photolithography such that a second resist mask pattern is formed; and{'sub': 4', '3', '2', '4', '2, '(g) after the step (f), subjecting the carbon-added silicon oxide film to a dry etching process by using mixed gas containing at least CFgas, CHFgas, and Ngas as its components,'}{'sub': 4', '2', '3', '2', '4, 'wherein a flow rate condition of the mixed gas to be used for the dry etching process of the step (g) satisfies a relationship of CF>N>CHF.'}17. The manufacturing method of a semiconductor device according to claim 16 ,wherein the mixed gas to be used for the dry etching process of the step (g) further contains Ar gas.18. The manufacturing method of a semiconductor device according to claim 16 ,wherein, in the step (g), a wiring trench for forming copper wiring is formed in the carbon-added silicon oxide film.19. The manufacturing method of a semiconductor device according to claim 16 , ...

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Номер записи: 99
15-02-2018 дата публикации

METHOD FOR CONDITIONING SILICON PART

Номер: US20180047594A1
Автор: Daugherty John, KOSHY Robin, Shih Hong, SRINIVASAN Satish, Xu Lin
Принадлежит:

A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon. 1. A method for conditioning a silicon part , comprising:heating the silicon part to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide; andplacing the silicon part in a wet bath wherein the wet bath is a solution that selectively etches silicon oxide with respect to silicon, wherein the wet bath consists essentially of HF and water.2. (canceled)3. The method claim 1 , as recited in claim 1 , wherein the silicon part is a plasma processing chamber silicon showerhead with gas apertures claim 1 , wherein inner surfaces of the gas apertures are formed into silicon oxide by the heating and wherein the wet bath selectively etches the silicon oxide formed on the inner surfaces of the gas apertures with respect to silicon.4. The method claim 1 , as recited in claim 1 , further comprising adding oxygen while heating the silicon part.5. The method claim 4 , as recited in claim 4 , wherein the wet bath infinitely selectively etches silicon oxide with respect to silicon.6. (canceled)7. (canceled)8. (canceled)9. The method claim 1 , as recited in claim 1 , wherein the the heating of the silicon part pyrolyzes or gasifies polymer deposition on the silicon part.1015-. (canceled)16. A method for conditioning a silicon part claim 1 , comprising:heating the silicon part to a temperature of at least 300° C. and between 300° C. and 800° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide; andplacing the silicon part in a HF wet bath, wherein the HF wet bath selectively etches silicon oxide with respect to silicon.1721-. ( ...

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Номер записи: 100