ЭЛЕМЕНТ ТУРБИНЫ С ТЕПЛОЗАЩИТНЫМ ПОКРЫТИЕМ

... 1. Элемент турбины, отличающийся тем, что он содержит подложку, образованную из керамического материала, выбранного из группы, состоящей из монолитного керамического материала и композиционного керамического материала, и теплозащитное покрытие, связанное с указанной подложкой. 2. Элемент турбины по п.1, отличающийся тем, что указанный керамический материал выбран из группы, состоящей из нитрида кремния и самоупрочненного нитрида кремния. 3. Элемент турбины по п.1, отличающийся тем, что указанный керамический материал выбран из группы, состоящей из композиционного материала на основе карбидокремниевого волокна и карбидокремниевой матрицы и композиционного материала на основе углеродного волокна и карбонизированной матрицы. 4. Элемент турбины по п.1, отличающийся тем, что указанное теплозащитное покрытие содержит по меньшей мере 15 мол.% по меньшей мере одного полуторного оксида лантанида, а остальное составляет первый оксид, выбранный из группы, состоящей из диоксида циркония, оксида церия ...

Огнеупорный материал

Способ изготовления фасонных изделий

Огнеупорный материал

CПOCOБ ИЗГOTOBЛEHИЯ TEПЛOПPOBOДHOЙ KEPAMИKИ

Способ изготовления теплопроводной керамики

Назначение: изобретение относится области изготовления изделий из теплопроводной керамики и может быть использовано для приборов электрбнной техники, в а частности для получения крупногабаритных заготовок теплоотводящих плат. Сущность изобретения: смешивают нитрид кремния и нитрид бора кубической модификации, формуют заготовку и проводят горячее прессование в три стадии: на первой стадии нагрев осуществляется со скоростью 40 - 50°С в 1 мин до температуры 1823 - 1843 К при давлении 6,0 - 8,0 МПа с выдержкой при этой температуре 80-100 мин, на второй стадии повышают давление до 20 - 24 МПа, повышают температуру до 1973 - 1993 К со скоростью 20 - 30°С в 1 мин, время выдержки при этой температуре составляет 10 - 20 мин, на третьей стадии снижают температуру до 1900 - 1920 К со скоростью 20 - 30°С в 1 мин и выдерживают при этой температуре 10 - 20 мин при давлении 20 - 24 МПа, после чего нагрев прекращают и давление снимают. 1 табл. СЛ ...

Огнеупорная масса для соединения керамических изделий

ОГНЕУПОРНАЯ МАССА ДЛЯ СОЕДИНЕНИЯ КЕРАМИЧЕСКИХ ИЗДЕЛИЙ из нитрида кремния, включающая нитри; кремния , оксид магния и алюмохромфосфатное связующее, отличающаяс я тем, что, с целью повышения прочности соединения, она дополнительно содержит оксид циркония при следующем соотношении компонентов, мас.%: Оксид магния 1-5 Алюмохромфосфатное связующее 20-35 Оксид циркония 5-20 Нитрид кремния Остальное ...

Огнеупорный материал

Изобретение относится к получению керамического материала, работающего в контакте с расплавом алюминия , а именно для электромагнитных насосов, тиглей, труб для перекачки расплава, литниковых каналов и пр. Для повышения стойкости к расплаву алюминия смешивают 70-80% нитрида кремни и 20-30% алюмината кальция вначале всухую, з;.тем с увлажнением, заливают в формы, а после отверждения термообрабатывают при 80С. Полученный материал обладает следующими свойствами: плотности 2,1-2,5 г/см, прочность при сжатии 45-70 МПа, модуль упругости 4.10 -6.10 МПа, коэффициент теплопроводности 2,5- 3 Вт/м.град, КТР 3,6-3.10 1/°С. 1 табл.

Огнеупорный материал

Способ получения композиционного материала

Способ изготовления изделий из нитрида кремния

Назначение: изобретение относится к области металлургии, в частности к способам получения изделий из тугоплавких соединений методами порошковой металлургии , а также к способам использования продуктов, получаемых методом СВС с восстановительной стадией. Сущность изобретения: размол порошка нитрида кремния перед его гранулированием и прессованием совмещают со смешиванием с активатором спекания, в качестве которого используют мелкодисперсный рентгеноаморфный нитрид кремния, получаемый из оксида кремния в присутствии магния в среде азота методом СВС с восстановительной стадией, При спекании эта добавка плавится, обеспечивая присутствие жидкой фазы, а затем кристаллизуется в форме /3-фазы. Прирост плотности при введении описанной добавки составил 250 кг/м , а прирост прочности на изгиб 142 МПа. 2 табл. СЛ С ...

KERAMISCHER WERKSTOFF ZUM SPRITZGIESSEN UND VERFAHREN ZUM SPRITZGIESSEN UNTER DESSEN VERWENDUNG

SINTERFAEHIGE SILIZIUMNITRID-PULVER MIT SINTERADDITIVEN UND VERFAHREN ZU IHRER HERSTELLUNG.

... (A) A novel sinterable Si3N4 powder of less than 1 micron mean particle size contains no particles of over 100 microns dia., has a total metallic impurity content below 1000 ppm. (esp. below 200 ppm. Fe content) and contains a uniform distribution of sintering additive. (B) Prodn. of the powder involves grinding agglomerated Si3N4 powder (contg. below 1000, pref. below 200 ppm. metallic impurities) and sintering additive powder together in a spiral jet mill.

SINTERFAEHIGES SILIZIUMNITRID-PULVER SOWIE VERFAHREN ZU SEINER HERSTELLUNG.

... (A) A novel sinterable Si3N4 powder of less than 1 micron mean particle size contains no particles of over 100 microns dia., and has a total metallic impurity of below 1000 ppm. (esp. below 200 ppm. Fe content). (B) The powder is produced by grinding agglomerated Si3N4 powder in a spiral jet mill.

Formgebungsverfahren und Vorrichtung für Siliciumnitridkeramik

New silicon nitride material has a high silicon dioxide content, a sub-micron grain size and a low defect content

A new silicon nitride material has a high silicon dioxide content, a sub-micron grain size and a low defect content. A silicon nitride material has, in the sintered condition, a molar ratio of silicon dioxide to the sum of the silicon dioxide and other sintering additives of greater than 50 %, a mean particle size of <= 0.3 mu and a content of <= 5000/mm<2> of defects with a maximum linear dimension of greater than 3 mu . An Independent claim is also included for production of the above silicon nitride material, in which the Si3N4 powder is thermally oxidized alone or together with sintering additives, mixed with finely dispersed SiO2 powder, subjected to intensive grinding, alone or together with sintering additives and/or mixed with a material containing a SiO2-forming component before or during grinding, followed by sintering, pressure sintering, hot pressing or hot isostatic pressing.

Verfahren zur Herstellung eines fließfähigen, mit Sinterhilfsmitteln beschichteten Siliziumnitrid-Pulvers sowie eines gesinterten Formkörpers

Verfahren zum Spritzgiessen von keramischen Werkstoffen.

KERAMISCHES HEIZELEMENT.

Sinterkörper aus Siliziumnitrid und Verfahren zu seiner Herstellung.

Werkzeug in Form eines heizbaren Stiftes

Siliciumnitridsinterkörper

Siliciumnitridsinterkörper, dadurch gekennzeichnet, daß er eine ß-Siliciumnitridkristallphase als Hauptkristallphase sowie mindestens eine Seltenerdmetallkomponente und eine Aluminiumkomponente in der Korngrenzenphase enthält, wobei das Intensitätsverhältnis X2/X1 des Si-Maximums X2 bei 521 cm-1 zum Siliciumnitrid-Maximum X1 bei 206 cm-1, bestimmt durch eine spektrochemische Raman-Analysenmethode, 0,2 - 3 beträgt.

ZIEHHUELSE ZUR VERWENDUNG IN EINER VORRICHTUNG ZUM KONTINUIERLICHEN BESCHICHTEN EINES KERNDRAHTES IN EINEM SCHMELZTIEGEL IM TAUCHVERFAHREN

Process for changing the structure of silicon nitride ceramics comprises changing the process parameters

Process for changing the structure of Si3N4 ceramics comprises changing the process parameters.

Reinforced ceramic moulding useful for e.g. turbocharger rotor blade

Reinforcement of a ceramic moulding comprises adding ceramic fibres to a ceramic matrix. The fibres consist of Si, N, O and C, in which the total content of C and O is at most 10 wt. % and the ratio 0.08-2. The reinforced ceramic mouldings are claimed.

Siliziumnitrid-Koerper und Verfahren zu seiner Herstellung

METHOD OF PRODUCING CERAMICS OF SILICON NITRIDE

... 1392161 Ceramic TOYOTA CHUO KENKYUSHO KK 21 Dec 1972 [21 Dec 1971] 59151/72 Heading C1J A silicon nitride ceramic is made by forming a powdered mixture of 10 to 80 mol per cent Si 3 N 4 , and 20 to 90 mol per cent Al 2 O 3 with optionally up to 70 mol per cent of A1N, sintering the mixture at 1650‹ to 2000‹ C. in a non-oxidizing atmosphere for a time sufficient to dissolve most of the Al 2 O 3 and A1N if present into the Si 3 N 4 in solid phase. The sintering preferably is undertaken at a pressure of 100 to 300 kg./cm.2.

METHOD OF MANUFACTURING HOT PRESSED CERMAIC MATERIAL BASED ON SILICON NITRIDE

... 1415522 Hot pressing silicon nitride LUCAS INDUSTRIES Ltd 27 March 1973 [6 April 1972] 15883/72 Heading C7D Hot pressing of Si 3 N 4 based ceramics is effected in a graphite die with a barrier material between the ceramic and the die walls which forms a barrier layer on the ceramic to prevent reaction between the ceramic and graphite die. The barrier material is preferably Al 2 O 3 or a compound such as the hydroxide which generates Al 2 O 3 on heating. The barrier material may be applied as a spray coating on the graphite die surfaces or as a spray or immersion coating on a preformed compact of the ceramic. The Al 2 O 3 is preferably applied as a slurry in collodion and acetone. The Al 2 O 3 forms a barrier layer of silicon aluminium oxynitride on the Si 3 N 4 . A release agent such as BN may be applied to the die between the barrier layer and the graphite when the barrier layer is applied to the die. The ceramic powder may be a mixture of Si 3 N 4 and Al 1 O 3 .

Silicon nitride materials

A silicon nitride body is prepared by sintering a silicon nitride powder and a mixture of barium oxide, aluminium oxide and silicon dioxide. The silicon dioxide may be or may include silicon dioxide present in the silicon nitride. The additive gives rise to a liquid (glassy) phase to assist sintering, which liquid phase crystallises to form a refractory crystalline phase at the grain boundaries thereby endowing the body with good high temperature strength.The refractory phase may, for example be celsian (BaOAl2O32SiO2).

COMPOSITE MATERIAL AND METHOD FOR MANUFACTURING IT

Ceramic particles coated with zirconium oxide

A composition suitable for the production of ceramics is provided. The composition comprises a particulate material which is a nitride, carbide, carbonitride or boride of Ti, Zr, Al, Si or B having a coating on the particle comprising 5 to 75 wt% with respect to particulate material of an oxide or hydrous oxide of zirconium. The composition can be used to produce a tough zirconia/non-oxide ceramic without the need to co-mill the ingredients. A stabilising agent for the zirconia may also be present in the coating although the invention is designed to avoid the necessity for such agents. Coating usually is effected by a wet treatment process in which the particles are dispersed in a solution of a hydrolysable zirconium salt and the oxide or hydrous oxide is coated on the particles by adjusting the pH of the dispersion.

Rare earth silicate coating on a silicon-based ceramic component formed by controlled oxidation

A rare earth silicate coating of thickness 1-5 micron on a silicon-based ceramic component protects the component against corrosive/erosive environments. The coating is self-formed by an oxidation process of a silicon-based ceramic associated with a reaction between a silica (SiO2) film layer on the surface of silicon-based ceramic and the rare earth oxide existing inside of silicon-based ceramic component. The ceramic may be silicon nitride silicon carbide or molybdenum disilicide. The rare earth may be La, Yb or Y. The component may be a turbine blade, turbocharger or a glow plug.

A process for the production of a sintered material based on Si3N4

HIGH DENSITY, SINTERED SILICON NITRIDE CONTAINING ARTICLES AND METHODS FOR USING THE SAME TO PROCESS MOLTEN NICKEL

Rare earth silicate coating on a silicon-based ceramic component by controlled oxidation for improved corrosion resistance

Monolithic ceramic electronic component and ceramic paste

A process for producing a monolithic ceramic electronic components, e.g. a capacitor or inductor includes: forming a plurality of composite structures 6 each comprising a ceramic green sheet 2 produced by shaping a ceramic slurry, internal circuit element films 1 formed by applying a conductive paste partially onto a main surface of the sheet so as to provide step-like sections defining spaces, and a ceramic green layer 5, the layer being formed by applying the ceramic paste onto the surface of the sheet to compensate for the spaces; forming a green laminate from the structures and firing the laminate. The ceramic paste comprises a ceramic powder, an organic solvent and a binder which is a mixture of a cellulose ester and a polyacrylate.

METHOD FOR MANUFACTURING POWDERS

Monolithic ceramic electronic component and production process therefor, and ceramic paste and production process therefor

METHOD FOR MANUFACTURING HEAT-RESISTANT REINFORCED COMPOSITE MATERIALS

... 1312315 Sintered refractory bodies TOKYO SHIBAURA ELECTRIC CO Ltd 28 April 1970 [30 April 1969 2 May 1969] 20413/70 Heading C7D A refractory material is produced by sintering in a non oxidising atmosphere a powder mixture of at least 85% mole of a first component which is aluminium carbide or a nitride or carbide of Si, or B and a second component which is an oxide of a group III an element (excluding actinium) or an oxide of an element of the lanthanide series. Sintering is effected in N 2 , NH 3 or an inert gas and an oxide, nitride, carbide, silicide, boride or sulphide may also be added. Examples of these additives are BeO, SiO 2 and TiB 2 . The Si 3 N 4 of the first component may be replaced by Si or FeSi and the nitride formed in situ by sintering in N 2 or NH 3 . In a modification the first component is aluminium nitride and the second component is an oxide of an element of the actinide series (other than Ac, Th or U).

CERAMIC MATERIAL

PREPARATION OF SILICON NITRIDE POWDER

REDUCING THE PERMEABILITY OF SILICON NITRIDE

... 1527068 Silicon nitride ROSENTHAL AG 4 Aug 1977 [5 Aug 1976] 32709/77 Heading C1A [Also in Division C7] The gas permeability of a sintered porous silicon nitride body is reduced by saturating the body with a silicon halide and then precipitating silicon imide in the pores of the body by treatment with ammonia, the silicon imide thereafter being converted into silicon nitride by firing in a nitrogen atmosphere.

SIC-SI3N4 COMPOSITE SYSTEM

Improvements in or relating to textile machine rollers

... 779,674. Rollers. THWAITES, J. Dec. 2, 1955 [Dec. 16, 1954], No. 36431/54. Class 42 (2). [Also in Group IX] A textile machine roller comprises a spindle 10 having annular or helical grooves 13 into which a covering layer of plasticized polyvinyl chloride enters. The outer surface of the polyvinyl chloride may have shallow grooves 14 aligned with the grooves 13 on the spindle or may be ground to plain cylindrical shape. Such rollers may be made by placing the spindle 10 in a mould into which polyvinyl chloride in paste form is forced, the coated spindle being subjected to heat after removal from the mould to cure the polyvinyl chloride, such curing preferably being carried out at a lower temperature than usual, e.g. 125-130‹ C., but for a longer time, e.g. 4 hours.

REFRACTORY CERAMIC BATCH AND BRICK PRODUCED THEREFROM

Refractory ceramic batch and brick produced therefrom

Refractory ceramic batch and brick produced therefrom

Refractory ceramic batch and brick produced therefrom

PROCEDURE FOR THE PRODUCTION OF A FORMED BODY FROM SILICON NITRIDE

PROCEDURE FOR THE PRODUCTION OF CERAMIC CAMP CONSTRUCTION UNITS

USE OF A SUBSTRATE ON BASIS OF SILICON NITRIDE FOR THE PRODUCTION OF SEMICONDUCTOR OF ELEMENTS

SCHLEIFKÖRPERPRESSLING FROM CUBIC BORON NITRIDE AND PROCEDURE FOR ITS PRODUCTION

PROCEDURE AND DEVICE FOR THE PRODUCTION OF A POWDER WORKPIECE BY ISO-STATIC PRESSING

CARRYING ELEMENT FOR THE FILTER AND/OR FELT OF A PAPER OR A BOARD MACHINE, A PROCEDURE FOR ITS PRODUCTION AND ITS USE

PROCEDURE FOR THE COMPOUNDIEREN OF CERAMIC INJECTION MOULDING MASSES AND FIBER MASSES.

VERFAHREN ZUM SCHÄUMEN VON SINTERFORMKÖRPERN MIT ZELLSTRUKTUR

The invention relates to a method for producing highly porous powder-molded bodies made of ceramic and/or metallic matrix material by post-foaming swellable polystyrol particles that are provided with a layer of essentially matrix powder and polyamide as an organic binder component. Porous molded bodies having a honeycomb-type cellular structure and densely sintered, highly supportive cell walls are obtained by controlling post-foaming in the inventive manner in a closed molding device.

ALPHA SIALON CONTAINING CERAMIC(S).

FIREPROOF ONE, ELECTRICAL CONDUCTIVE ONE OF MIXER MATERIALS AND PROCEDURES FOR YOUR PRODUCTION BY ISO-STATIC HOT-PRESSING.

PROCEDURE FOR FORMING INORGANIC POWDERS BY FREEZING AND PRESSING.

STRENGTHENED, CERAMIC CUTTING TOOL.

FIREPROOF KOMPOSITMATERIAL.

PROCEDURE FOR THE PRODUCTION OF A MIXTURE SINTERED COMPACT FROM SILICON NITRIDE/CBORON NITRIDE

PROCEDURE FOR THE PRODUCTION OF MOLDED ARTICLES FROM SILICON NITRIDE.

MICROWAVE SINTER PROCEDURE

HIGH TEMPERATURE CELEBRATIONS SILICON NITRIDE CERAMIC(S) AND PROCEDURE FOR YOUR PRODUCTION

POLYCRYSTALLINES SINTERED COMPACTS ON BASIS OF SILICON NITRIDE WITH HIGH FRACTURE TOUGHNESS AND HAERTE.

PROCEDURE FOR THE HEAT TREATMENT OF SINH, SIH AND INSATIATED GROUPS OF ABSTENTIONS POLYSILAZATEN.

PROCEDURE FOR THE PRODUCTION OF WHISKER-STRENGTHENED CERAMIC(S)

NITRIDE PRODUCTS AND METHOD AND APPARATUS TO YOUR PRODUCTION

PROCEDURE FOR THE PRODUCTION OF HOT-PRESSED ONES OF CERAMIC MATERIALS

Tool for the cold or hot-forming and procedure for its production

Procedure for the production of a product of silicon nitride

PROCEDURE FOR THE PRODUCTION OF HOT-PRESSED ONES SILICON NITRIDE ARTICLE

Procedure for the production of a product of silicon nitride

COMPOSITION, PRODUCTION AND USE OF SILICON NITRIDE AS BIOLOGICAL MATERIAL FOR MEDICAL PURPOSES

SPRAYINGPOUR PROCEDURES FOR THE PRODUCTION OF FORMKÖRPEN FROM CERAMIC(S) AND/OR METALLIC POWDERS OF MEANS GEL TRAINING

MULTILEVEL CERAMIC(S) GROUP

MAKING HOT PRESSED SILICON NITRIDE BY USE OF LOW DENSITY REACTION BONDED BODY

SILICON NITRIDE ARTICLE

Ceramic plate for side weir of twin drum type continuous casting apparatus

SI3N4.Y2O3. SIO2 CERAMIC SYSTEM USEFUL FOR MACHINING CAST IRON

Processing of ceramic materials

SILICON NITRIDE WITH IMPROVED HIGH TEMPERATURE STRENGTH

COATED COMPOSITE SILICON NITRIDE CUTTING TOOLS

METHOD OF PRODUCING DENSE SILICON NITRIDE CERAMIC ARTICLES HAVING CONTROLLED SURFACE LAYER COMPOSITION

DENSE SINTERED BODIES OF NITRIDE MATERIALS

SILICON NITRIDE SINTERED BODIES AND PROCESS FOR MANUFACTURING THE SAME

SILICON NITRIDE SINTERED BODIES AND PROCESS FOR MANUFACTURING THE SAME A silicon nitride sintered bodies are disclosed, which each comprise not less than 70% by weight of Si3N4 and essentially consist of Si, O, N, and a remainder being at least two kinds of rare earth elements selected from Y, Er, Tm, Yb, and Lu. A ratio of a molar amount of all the rare earth elements contained in the sintered body when calculated as Ln2O3 in which Ln is a rare earth element selected from Y, Er, Tm, Yb and Lu with respect to a molar amount of oxygen when calculated as SiO2 is in a range from 0.4 to 1.3. The amount of oxygen when calculated as SiO2 is obtained by subtracting an amount of oxygen contained in all the Ln2O3 obtained by expressing all the rare earth elements contained in said sintered body as Ln2O3 from an amount of oxygen contained in the sintered body and converting a remaining amount of oxygen into SiO2. Any one of the rare earth elements contained in the sintered body is not more than 95 ...

METHOD FOR FABRICATING OF LARGE CROSS SECTION INJECTION MOLDED CERAMIC SHAPES

METHOD FOR FABRICATING LARGE CROSS SECTION INJECTION MOLDED CERAMIC SHAPED A method for fabricating large, greater than one centimeter cross section, high density silicon nitride by injection molding process has been developed. The method requires use of a controlled starting powder, a novel binder removal process, a prefiring step followed by isopressing and conventional sintering.

PROCESS FOR THE PRODUCTION OF INDUSTRIAL CERAMICS POWDERS WITH ADDITIVES

PROCESS FOR THE PRODUCTION OF INDUSTRIAL CERAMICS POWDERS WITH ADDITIVES Industrial ceramic powder useful in preparing molded ceramic bodies is prepared by a) applying a salt, or salt mixture, soluble in aqueous media and thermally decomposable into an oxide to individual core powder particles and b) converting the salt, or salt mixture, into its corresponding oxide form by application of heat to cause thermal decomposition of the salt or salt mixture.

ABRASION RESISTANT SILICON NITRIDE BASED ARTICLES

... 20458 A composite article and cutting tool are prepared by densification to form a body consisting essentially of particles of hard refractory material uniformly distributed in a matrix consisting essentially of a first phase and a second phase, said first phase consisting essentially of crystalline silicon nitride and said second phase being an intergranular refractory phase comprising silicon nitirde and a suitable densification aid selected from the group consisting of yttrium oxide, zirconium oxide, hafnium oxide and the lanthanide rare earth oxides and mixtures thereof.

SILICON NITRIDE SINTERED BODIES AND A METHOD FOR PRODUCING THE SAME

Silicon nitride sintered bodies having high density, mechanical strength and fracture toughness, which contain the given amounts of oxides or oxynitrides of Sr, Mg, a rare earth element and Zr respectively and the remainder of Si3N4, are produced by shaping a raw batch material containing compounds of each of Sr, Mg, a rare earth element and Zr in the given amounts respectively as a sintering aid and the remainder of silicon nitride powder and pressureless sintering the shaped body in nitrogen or an inert gas atmosphere.

COATED SILICON NITRIDE CUTTING TOOLS

COATED SILICON NITRIDE CUTTING TOOLS : Cutting tools and cutting tool inserts having improved mechanical and chemical wear resistance under demanding conditions of machining speed, temperature, or workpiece hardness comprise a silicon nitride substrate body having at least one hard, adherent coating layer of a refractory material. The silicon nitride substrate body consists essentially of a first phase of silicon nitride and a refractory second phase comprising silicon nitride and an effective amount of a densification aid selected from the group consisting of silicon dioxide, aluminum oxide, magnesium oxide, yttrium oxide, hafnium oxide, zirconium oxide, the lanthanide rare earth oxides, and mixtures thereof.

SINTERED SILICON NITRIDE BASE CERAMIC

PRODUCTION OF HIGH DENSITY REFRACTORY SHAPES

HIGH PURITY DIFFUSION FURNACE COMPONENTS

Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.

ABRASION RESISTANT ARTICLES BASED ON SILICON NITRIDE

METHOD OF MAKING SILICON NITRIDE BASED CUTTING TOOLS - II

Ceramic material, laminate, member for use in semiconductor manufacturing equipment, and sputtering target member

A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuKα radiation appear at at least 2θ=47 to 50°.

Methods for making aluminum nitride armor bodies

A method of making aluminum nitride armor bodies is provided. The method starts with low cost bulk raw material, in the form of aluminum or aluminum alloy, cryogenically mills the raw material into a precursor powder, which is essentially free of oxides and other undesirable impurities. The precursor powder is formed into a pre-form using low cost, short residence time molding processes. Finally, the pre-form is exposed to a nitriding process to convert the pre-form into the aluminum nitride armor body. In this manner, the method avoids the use of high cost aluminum nitride as a starting material and avoids the need for the high cost, single axis densification processes of the prior art.

Composite Material of Electroconductor Having Controlled Coefficient of Thermical Expansion

The present invention relates to a composite material comprising a ceramic component, characterized in that it has a negative coefficient of thermal expansion, and carbon nanofilaments, to its obtainment process and to its uses as electrical conductor in microelectronics, precision optics, aeronautics and aerospace.

Luminescent particles, methods and light emitting devices including the same

A luminescent particle includes an interior portion of the luminescent particle comprising a luminescent compound that reacts with atmospherically present components and a passivating layer on an outer surface of the luminescent particle that is operable to inhibit the reaction between the luminescent compound and the atmospherically present components.

Nanostructured dielectric materials for high energy density multilayer ceramic capacitors

A multilayer ceramic capacitor, having a plurality of electrode layers and a plurality of substantially titanium dioxide dielectric layers, wherein each respective titanium dioxide dielectric layer is substantially free of porosity, wherein each respective substantially titanium dioxide dielectric layer is positioned between two respective electrode layers, wherein each respective substantially titanium dioxide dielectric layer has an average grain size of between about 200 and about 400 nanometers, wherein each respective substantially titanium dioxide dielectric layer has maximum particle size of less than about 500 nanometers. Typically, each respective substantially titanium dioxide dielectric layer further includes at least one dopant selected from the group including P, V, Nb, Ta, Mo, W, and combinations thereof, and the included dopant is typically present in amounts of less than about 0.01 atomic percent.

COMPOSITE BODY AND METHOD OF MAKING

A composite article having a body including a first phase that includes a nitride material, a second phase that includes a carbide material, and a third phase having one of an amorphous phase material with a nitrogen content of at least about 1.6 wt % or an amorphous phase material comprising carbon. 1. A composite article comprising: a first phase comprising a nitride material;', 'a second phase comprising a carbide material; and', a first amorphous phase portion having a nitrogen content of at least about 1.6 wt %; and', 'a second amorphous phase portion comprising carbon., 'a third phase comprising a least one of], 'a body including2. The composite article of claim 1 , wherein the first phase comprises silicon nitride.3. The composite article of claim 1 , wherein the first phase comprises a crystalline material comprising grains claim 1 , and wherein the grains have an average grain size of not greater than about 10 microns.46-. (canceled)7. The composite article of claim 1 , wherein the first phase comprises grains having an acicular shape claim 1 , and wherein the second phase comprises grains having an acicular shape.8. The composite article of claim 1 , wherein the second phase comprises silicon carbide.9. The composite article of claim 1 , wherein the second phase comprises a crystalline material comprising grains claim 1 , and wherein the grains have an average grain size of not greater than about 500 microns.1012-. (canceled)13. The composite article of claim 1 , wherein the first amorphous phase portion of the third phase comprises a magnesium claim 1 , alumina oxide material.14. The composite article of claim 1 , wherein the body comprises a greater content of the first phase than a content of the third phase claim 1 , and wherein the body comprises a greater content of the second phase than a content of the third phase.15. The composite article of claim 1 , wherein the body comprises not greater than about 20 wt % of the third phase including the first ...

Graphene-Reinforced Ceramic Composites and Uses Therefor

The disclosure provides novel graphene-reinforced ceramic composites and methods for making such composite materials. 1. A ceramic composite material comprising a graphene-reinforced ceramic material.2. The ceramic composite material of claim 1 , wherein the graphene is present in the graphene-reinforced ceramic material at between about 0.02% to about 1.5% on a volume percentage basis.3. The ceramic composite material of claim 1 , wherein the graphene is present in the graphene-reinforced ceramic material at between about 0.5% to about 1.5% on a volume percentage basis.4. The ceramic composite material of claim 1 , wherein the graphene is present in the ceramic composite material as two or more graphene sheets.5. The ceramic composite material of claim 1 , wherein the graphene is homogenously dispersed throughout the ceramic composite material.6. The ceramic composite material of claim 1 , wherein the graphene comprises graphene that is present at one or more grain boundaries of the ceramic material.7. The ceramic composite material of claim 6 , wherein the graphene present at the one or more grain boundaries comprises one or more graphene sheets.8. The ceramic composite material of claim 6 , wherein the graphene present at the one or more grain boundaries comprises one or more graphene platelets9. The ceramic composite material of claim 1 , wherein the ceramic material comprises SiN.10. The ceramic composite material of claim 9 , wherein the SiNis predominately α-SiN.11. A method for making a ceramic composite material claim 9 , comprising(a) combining graphene with a ceramic material; and(b) densifying the combination to produce a graphene-reinforced ceramic material.12. The method of claim 11 , wherein the graphene and the ceramic material are each mixed with cationic surfactant prior to the combining step.13. The method of claim 11 , wherein the graphene is present in the combination at between 0.5% to 1.5% on a volume percentage basis.14. The method of claim ...

Methods of Synthesizing Thermoelectric Materials

Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

CRUCIBLES

A method for manufacturing a crucible for the crystallization of silicium comprising the steps of •preparing a slurry of solids and liquids, said solids consisting of •silicon metal powder •up to 25% (w/w) SiC powder •up to 10% (w/w) SiN •up to 0.5% (w/w) of a catalyst •up to 1% (w/w) of a binder •forming the slurry into a green body of a crucible •heating the green body in a nitrogen atmosphere, optionally comprising inert gas, to react the silicon at least partially to silicon nitride. 1. A method for manufacturing a crucible for the crystallization of silicon comprising the steps of silicon metal powder', 'up to 25% (w/w) SiC powder', 'up to 10% (w/w) SiN', 'up to 0.5% (w/w) of a catalyst', 'up to 1% (w/w) of a binder, 'preparing a slurry of solids and liquids, said solids consisting of'}forming the slurry into a green body of a crucibleheating the green body in a nitrogen atmosphere, optionally comprising inert gas, to react the silicon at least partially to silicon nitride.2. The method of claim 1 , wherein the particle size of the silicon metal powder is in the range of 0 to 100 μm claim 1 , preferably 0 to 45 μm.3. The method of claim 1 , wherein at least 75% (w/w) of the solids are silicon metal powder.4. The method of claim 1 , wherein the solids comprise up to 15% (w/w) SiC powder.5. The method of claim 1 , wherein the catalyst is FeO and/or the binder is an aqueous polymer dispersion.6. The method of claim 1 , wherein the inert gas is selected from argon claim 1 , helium and mixtures thereof.7. The method of claim 1 , wherein the pressure of the nitrogen claim 1 , optionally including inert gas claim 1 , atmosphere is between 200 and 1400 mbar.8. The method of claim 1 , wherein heating is conducted at temperatures above 1050° C. claim 1 , preferably above 1250° C. claim 1 , more preferably above 1400° C.9. The method of claim 1 , wherein heating is conducted for 3 to 14 days at temperatures above 1000° C.10. The method of claim 1 , wherein the silicon ...

Method and apparatus for sintering flat ceramics

A method and apparatus for sintering flat ceramics using a mesh or lattice is described herein.

White emitting light source and luminescent material

The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b(MN)*c(SiN4/3)*d1CeO3/2*d2 EuO*xSiO2*yAlO3/2 wherein AE is an alkaline earth metal chosen of the group of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen of the group of Al, B, Ga, Sc with d1>10*d2. In combination with a UV to blue light generating device this material leads to an improved light quality and stability, especially an improved temperature stability for a wide range of applications.

CERAMIC MATERIAL AND METHOD OF PREPARING THE SAME

A ceramic material, including: BaWO-xMCO-yBaO-zBO-wSiO, where x=0-0.2 mole, y=0-0.05 mole, z=0-0.2 mole, w=0-0.1 mole, M represents an alkali metal ion selected from Li, K, Na, and x, y, z, and w are not zero at the same time. 1. A ceramic material , comprising: BaWO-xMCO-yBaO-zBO-wSiO , wherein x=0-0.2 mole , y=0-0.05 mole , z=0-0.2 mole , w=0-0.1 mole , M represents an alkali metal ion selected from Li , K , Na , and x , y , z , and w are not zero at the same time.2. A method , comprising:{'sub': 3', '3', '2', '3', '2', '3', '2', '4', '2', '3', '2', '3', '2, 'sup': +', '+', '+, '1) weighing and mixing BaCO, WO, MCO, BOand SiObased on a chemical formula BaWO-xMCO-yBaO-zBO-wSiO, wherein x=0-0.2 mole, y=0-0.05 mole, z=0-0.2 mole, w=0-0.1 mole, M represents an alkali metal ion selected from Li, K, Na, and x, y, z, and w are not zero at the same time, to yield a first powder;'}2) mixing the first powder obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:5:1-2, ball-milling for 4-7 h, drying at 80-120° C., sieving with a 40-60 mesh sieve, calcining in air atmosphere at 700-900° C. for 2-4 h, to yield a second powder;3) mixing the second powder obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:5:1-2, ball-milling for 3-6 h, drying, to yield a third powder, and adding a binder to the third powder; and4) compression molding a resulting product obtained in 3) under a pressure of 20 megapascal, drying at 400-500° C. and sintering at 850° C.-900° C. for 0.5-2 h.3. The method of claim 2 , wherein the binder is an acrylic solution. Pursuant to 35 U.S.C. § 119 and the Paris Convention Treaty, this application claims foreign priority to Chinese Patent Application No. 201910603226.3 filed Jul. 5, 2019, the contents of which, including any intervening amendments thereto, are incorporated herein by reference. Inquiries from the public to applicants or assignees concerning this document or the related applications ...

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I, I, I, and I, a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m·K or more, and excellence in insulating properties and strength. 1. A high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more , wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2° , 29.7±0.2° , 27.0±0.2° , and 36.1±0.2° are expressed as I , I , I , and I ,{'sub': 29.3°', '27.0°', '36.1°', '29.7°', '27.0°', '36.1°, 'a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16.'}2. The high thermal conductive silicon nitride sintered body according to claim 1 , wherein the I and I are peaks corresponding to a rare earth element-hafnium-oxygen compound crystal claim 1 , and the I and Iare peaks corresponding to a β-SiNcrystal.3. The high thermal conductive silicon nitride sintered body according to claim 2 , wherein the rare earth element-hafnium-oxygen compound crystal comprises two or more types of compound crystals having same constituent elements and different composition ratios.4. The high thermal conductive silicon nitride sintered body according to claim 1 , wherein a sum of the peak ratio (I)/(I+I) and ...

MATERIAL INCLUDING BORON SUBOXIDE AND METHOD OF FORMING SAME

A material including a body including BOcan include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90≤X≤1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of BO. 1. (canceled)2. A material , having a body comprising BO , wherein:X=(Xa+Xc)/2, wherein Xa=(A−5.26)/0.1347, Xc=(C−12.410)/(−0.10435), A represents a value of lattice constant a, and C represents a value of lattice constant c; and0.85≤X≤1.2.3. The material of claim 2 , wherein the body comprises a length claim 2 , a width claim 2 , and a thickness.4. The material of claim 3 , wherein the length is greater than the width and the thickness.5. The material of claim 2 , wherein the body comprises a volume of at least 108 cm3.6. The material of claim 2 , wherein Xc is at least 0.89.7. The material of claim 2 , wherein A is at least 5.396.8. The material of claim 2 , wherein C is at most 12.318.9. An armor component claim 2 , comprising a body including the material of .10. The material of claim 2 , wherein the body has:a minimum thickness of 2 mm;a width of at least 10.0 cm; ora combination thereof.11. A material claim 2 , having a body comprising:a length, a width, and a thickness; and{'sub': 6', 'X', '6', 'X, 'BO, wherein the BOcomprises lattice constant a and lattice constant c, wherein A represents a value of constant a, and C represents a value of constant c, wherein C is at most 12.318.'}12. The material of claim 11 , wherein X=(Xa+Xc)/2 claim 11 , wherein Xa=(A−5.26)/0.1347 claim 11 , Xc=(C−12.410)/(−0.10435) claim 11 , A represents a value of lattice constant a claim 11 , and C represents a value of lattice constant c claim 11 , and wherein 0.85≤X≤1.2.13. The material of claim 11 , wherein the body is essentially free of an intentionally added sintering aid.14. The material of claim 11 , wherein the body ...

Process of manufacturing of soft magnetic ceramic and its use

A process for the manufacture of magnetic ceramic is provided including the steps of: die compacting a powder composition into a compacted body, the composition including a mixture of soft magnetic, iron or iron-based powder, core particles of which are surrounded by an electrically insulating, inorganic coating an amount of 1 to 35% by weight of the composition; and heating and pressing the compacted body in an atmosphere to a temperature and a pressure below the decomposition temperature and pressure of the magnetic, iron or iron-based powder.

OXIDE BASED CERAMIC MATRIX COMPOSITES

A method of making a ceramic matrix composites (CMC) having superior properties at high temperatures. The CMC can include a sol gel mixture mixed or blended metal oxide particles. The sol-gel mixture can be an aqueous colloidal suspension of a metal oxide, preferably from about 10 wt % to about 25 wt % of the metal oxide, containing a metal oxide such as alumina (AlO), silica (SiO) or alumina-coated silica. The mixture can be infiltrated into a ceramic fiber, gelled, dried and sintered to form the CMC of the present teachings. 1. A method of forming a ceramic composite , comprising:mixing a water based mixture that does not have a polymer by mixing (1) alumina particles having a size range of 0.1 to 1.0 micrometers, including submicron particles with (2) an aqueous colloidal suspension sol-gel having about 10 wt % to about 25 wt % of silica, alumina, or alumina coated silica, the sol-gel having particles having a size in a range of 4 to 150 nanometers wherein the formed mixture has 40 wt % to about 70 wt % sol-gel and about 30 wt % to about 60 wt % alumina particles;completely infiltrating a fabric consisting essentially of a ceramic fiber with the mixture of the sol-gel and the alumina particles;draping the fabric on a tool to form one or more layers of an infiltrated fabric into a shape;rigidifying the infiltrated fabric on the tool by curing the infiltrated fabric so that the infiltrated fabric maintains the shape after the tool is removed, wherein the curing the infiltrated fabric on the tool comprises autoclaving the infiltrated fabric while the infiltrated fabric is on the tool, and wherein the curing the infiltrated fabric includes subjecting the infiltrated fabric while placed on the tool to a vacuum bag cure to apply 30-100 psi at a temperature of about 350 degrees Fahrenheit;after rigidifying the infiltrated fabric in the shape, removing the tool from the infiltrated fabric and maintaining in the infiltrated fabric the shape; andheat treating the ...

A Heating Element Comprising Chromium Alloyed Molybdenum Disilicide And The Use Thereof

The present disclosure relates to a heating element, wherein at least one part of the heating element is manufactured from a molybdenum disilicide composition and wherein in the molybdenum disilicide composition, molybdenum is substituted by chromium according to (MoCr)Siand x is in the range of 0.16≤x≤0.19. 1. A heating element composed of at least two molybdenum disilicide-based parts ,{'sub': 1-x', 'x', '2, 'wherein at least one part is based on a molybdenum disilicide composition comprising more than 90 weight % of (MoCr)Siand wherein x is in the range of 0.16≤x≤0.19; and'}wherein at least one part is based on a molybdenum disilicide composition comprising{'sub': 2', '2, 'a) more than or equal to 90 weight % MoSibalance is aluminosilicate and/or SiO'}or{'sub': 2', '2, 'b) more than or equal to 90 weight % (Mo,W)Sibalance is aluminosilicate and/or SiO.'}2. The heating element according to claim 1 , wherein x is in the range of 0.16≤x≤0.18.3. The heating element according to claim 1 , wherein x is in the range of 0.165≤x≤0.175.4. The heating element according to claim 1 , wherein the molybdenum disilicide is substituted by chromium comprises from 95 weight % (MoCr)Si.5. The heating element according to claim 1 , wherein the composition of molybdenum disilicide is substituted by chromium has a balance of aluminosilicate and/or SiO.6. The heating element according to claim 1 , wherein the entire heating element consist of the molybdenum disilicide composition.7. The heating element according to claim 1 , wherein the heating element consists of two parts.8. The heating element according to claim 1 , wherein the heating element consists of three molybdenum disilicide-based parts wherein two parts of the heating element are based on the same molybdenum disilicide-based composition and one part of the heating element is based on a different molybdenum disilicide-based composition.9. Use of a heating element according to in a furnace.10. A furnace comprising a heating ...

MAGNESIUM OXIDE SPUTTERING TARGET AND METHOD OF MAKING SAME

A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cmor higher, and a transparency 10% or more. A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cmor higher, and an average crystal grain size of 50 μm or more. 1. A sintered compact magnesium oxide target for sputtering comprising:a purity of 99.99 wt % or higher;{'sup': '3', 'a density of 3.58 g/cmor higher; and'}a transparency 10% or more.2. The sintered compact magnesium oxide target for sputtering as in claim 1 , wherein the sintered compact magnesium oxide target for sputtering further includes raw material of pure MgO powder claim 1 , wherein said MgO powder includes a particle size of less than 10m and specific surface area of less than 15 10m/kg.3. The sintered compact magnesium oxide target for sputtering as in claim 1 , wherein the transparence is 10% or higher.4. The sintered compact magnesium oxide target for sputtering as in claim 1 , wherein variation in the transparence is within 1%.5. A sintered compact magnesium oxide target for sputtering comprising:a purity of 99.99 wt % or higher;{'sup': '3', 'a density of 3.58 g/cmor higher; and'}an average crystal grain size of 50 μm or more.6. The sintered compact magnesium oxide target for sputtering according to claim 5 , wherein said sintered compact magnesium oxide target further includes raw material of pure MgO powder claim 5 , wherein said MgO power includes a particle size of less than 10m and a specific surface area less than 15 10m/kg.7. The sintered compact magnesium oxide target for sputtering according to claim 5 , wherein the transparence is 10% or higher.8. The sintered compact magnesium oxide target for sputtering according to claim 5 , wherein the variation in the transparence is within 1%.9. A method for producing a sintered compact magnesium oxide target for sputtering claim 5 , the method comprising: ...

CERAMIC MATERIAL COMPRISING A PSEUDO-CUBIC PHASE, A PROCESS FOR PREPARING AND USES OF THE SAME

The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(BiNa)TiO-y(BiK)TiO-zSrHfO-zSrZrO, wherein x+y+Z+Z=1; y, (z+z)≠0; x≥0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y +z-i+z2=1; x, y, fa+z2)≠0; as well as a ceramic material of general formula (III): y(BiK)TiO-zSrHfO-zSrZrO, wherein y+z,+z=1; y, (z+z)≠0. 1. A ceramic material having a general chemical formula (I):{'br': None, 'sub': 0.5', '0.5', '3', '0.5', '0.5', '3', '1', '3', '2', '3, 'x(BiNa)TiOy(BiK)TiO-zSrHfO-zSrZrO\u2003\u2003(I)wherein:{'sub': 1', '2, 'x+y+z+z=1;'}{'sub': 1', '2, 'y and (z+z) are different from 0;'}x≥0; andthe ceramic material comprises a major portion of a pseudo-cubic phase having at least one of an axial ratio c/a of from 0.995 to 1.005 or a rhombohedral angle of 90±0.5 degrees and wherein the ceramic material is capable of undergoing a field induced reversible transition from the pseudo-cubic phase to a tetragonal phase having an axial ratio c/a of between 1.005 and 1.02.2. (canceled)3. (canceled)4. The ceramic material of claim 1 , wherein both zand zare different from zero.5. The ceramic material of claim 1 , wherein 0.25≤x≤0.65.6. The ceramic material of claim 1 , wherein 0.25≤y≤0.75.7. The ceramic material of claim 1 , wherein 0.01≤(z+z)≤0.15.8. The ceramic material of claim 1 , wherein:0.40≤x≤0.50;0.40≤y≤0.50; and{'sub': 1', '2, '0.02≤(z+z)≤0.10.'}9. The ceramic material of claim 1 , whereinx=0;10. (canceled)11. (canceled)12. The ceramic material of claim 9 , wherein 0.75≤y≤0.99.13. The ceramic material of claim 9 , wherein 0.01 ...

METHOD OF MAKING A THERMALLY STABLE POLYCRYSTALLINE SUPER HARD CONSTRUCTION

A method of making a thermally stable polycrystalline super hard construction having a plurality of interbonded super hard grains and interstitial regions disposed therebetween to form a polycrystalline super hard construction having a first thermally stable region and a second region, the first thermally stable region forming at least part of a working surface of the construction, comprises treating the polycrystalline super hard material with a leaching mixture to remove non-super hard phase material from a number of interstitial regions in the first region. The step of treating comprises masking the polycrystalline super hard construction along at least a portion of the peripheral side surface up to and/or at the working surface to inhibit penetration of the leaching mixture into the super hard construction through a peripheral side surface of the super hard construction. 1. A method of making a thermally stable polycrystalline super hard construction comprising a plurality of interbonded super hard grains and interstitial regions disposed therebetween to form a polycrystalline super hard construction having a first thermally stable region and a second region , the first thermally stable region forming at least part of a working surface of the construction , the method comprising:treating the polycrystalline super hard material with a leaching mixture to remove non-super hard phase material from a number of interstitial regions in the first region;the step of treating comprising masking the polycrystalline super hard construction along at least a portion of the peripheral side surface up to and/or at the working surface to inhibit penetration of the leaching mixture into the super hard construction through a peripheral side surface of the super hard construction, the chamfer spacing the working surface from the peripheral side surface.2. The method of claim 1 , wherein the step of removing non-super hard phase material from the interstitial regions in the first ...

Li3Mg2SbO6-BASED MICROWAVE DIELECTRIC CERAMIC MATERIAL EASY TO SINTER AND WITH HIGH Q VALUE, AND PREPARATION METHOD THEREFOR

A LiMgSbO-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li(MgZn)SbO, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling SbOand LiCOaccording to a chemical ratio and then drying, and conducting pre-sintering to obtain a LiSbOphase; and 2) mixing and ball-milling MgO, ZnO and LiSbOpowder according a chemical ratio of Li(MgZn)SbOand then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C. 1. A LiMgSbO-based microwave dielectric ceramic material , wherein a chemical formula of the LiMgSbO-based microwave dielectric ceramic material is Li(MgZn)SbO(0.02≤x≤0.08) and the LiMgSbO-based microwave dielectric ceramic material is prepared by a solid-phase reaction method of two-step sintering , comprising:{'sub': 2', '3', '2', '3', '3', '4', '3', '4, '(1) mixing and ball-milling SbOand LiCOaccording to a chemical ratio of LiSbOto obtain a first milled product, and then drying the first milled product, and conducting a pre-sintering on the first milled product to obtain a LiSbOmicrowave dielectric phase; and'}{'sub': 3', '4', '3', '1-x', 'x', '2', '6', '3', '2', '6, '(2) preparing a powder mixture from MgO, ZnO and the LiSbOmicrowave dielectric phase according to a chemical ratio of a molecular formula Li(MgZn)SbO(0.02≤x≤0.08); mixing, ball-milling, and drying the powder mixture to obtain a second milled product; after adding an adhesive to the second milled product to obtain a third mixture, conducting granulation and sieving to the third mixture to obtain a granulated mixture; then pressing the granulated mixture into a cylindrical ...

PREPARATION METHOD OF ALUMINA CERAMIC VALVE CORE CERAMIC CHIP AND PRODUCT THEREOF

A preparation method of an alumina ceramic valve core ceramic chip and a product thereof. The alumina ceramic valve core ceramic chip is obtained by the steps of mixing alumina, a sintering aid and a toughening agent according to a raw material ratio, ball-milling, drying, cold isostatic pressing, sintering and the like. The alumina ceramic valve core ceramic chip is prepared by adopting nano alumina and zirconium oxide as the sintering aid, so that the material has excellent bending strength, fracture toughness, hardness and low wear rate, the bending strength can reach 357.8-360.06 MPa, the fracture toughness is 4.32-4.56 MPa, the Vickers hardness is 1592.7-1614.8 MPa. the wear rate is 0.04-0.09%, and the alumina ceramic valve core ceramic chip is an ideal material for preparing a faucet valve core. 1. A preparation method of an alumina ceramic valve core ceramic chip , comprising following steps:(1) putting alumina with a purity of more than 99.5 percent, a sintering aid and SiC crystal whiskers into a ball milling tank for ball milling, wherein a ball milling medium is absolute ethyl alcohol; the sintering aid is nano alumina and zirconium oxide, a particle size of the nano alumina is 20 to 30 nm, and an adding amount of the nano alumina is 0.5 to 1 wt %; an adding amount of the zirconium oxide is 0.5 to 1 wt %; and an adding amount of the SiC crystal whiskers is 2 to 5 wt %; and(2) after the ball milling is finished, drying an obtained mixed material; then adding 5% by mass of a polyvinyl alcohol (PVA) water solution, and after ageing for 20 to 30 h, granulating; filling granulated powder into a hard rubber mold sleeve; sealing and then putting into a cold isostatic press for molding; keeping a pressure at 140 MPa to 160 MPa for 5 to 10 min to prepare a blank body, and drying an obtained blank body; then machining the blank body and discharging rubber in a muffle furnace at 600 to 800 DEG C under a microwave auxiliary condition for 1 to 2 h; then sintering at ...

PERFORMANCE OF TECHNICAL CERAMICS

Disclosed herein are a ceramic particle comprising a ceramic core substrate and a conformal coating of a sintering aid film on a surface of the core substrate, wherein the conformal coating includes a plurality of distributed islands of the sintering aid film across the surface of the core substrate; methods for producing the ceramic particle by ALD or MLD; and methods of using the coated ceramic particles in additive manufacturing or in solid oxide fuel cells. In one example, the film may have a thickness of less than three nanometers. The disclosed ceramic particle may be non-reactive with water. 1. A ceramic particle comprising:a core substrate chosen from yttria-stabilized zirconia, partially stabilized zirconia, zirconium oxide, aluminum nitride, silicon nitride, silicon carbide, boron carbide, boron nitride, aluminum oxide, barium titanate, and cerium oxide, anda conformal coating of a sintering aid film on a surface of the core substrate, wherein the conformal coating of the sintering aid film comprises a plurality of distributed islands of the sintering aid film across the surface of the core substrate.2. The ceramic particle of claim 1 , wherein less than 40 percent of the surface of the core substrate is covered by the plurality of distributed islands of the sintering aid film claim 1 , and wherein the plurality of distributed islands of the sintering aid film are substantially evenly distributed.3. The ceramic particle of claim 2 , wherein about 5 percent of the surface of the core substrate is covered by the plurality of distributed islands of the sintering aid film.4. The ceramic particle of claim 1 , wherein the ceramic particle is non-reactive with water.5. The ceramic particle of claim 1 , wherein the core substrate comprises barium titanate and the sintering aid film comprises at least one compound chosen from alumina claim 1 , an alkaline earth oxide claim 1 , zinc oxide claim 1 , titanium oxide claim 1 , boron nitride claim 1 , a silicon oxide ...

High-Strength Refractory Fibrous Materials

The disclosed materials, methods, and apparatus, provide novel ultra-high temperature materials (UHTM) in fibrous forms/structures; such “fibrous materials” can take various forms, such as individual filaments, short-shaped fiber, tows, ropes, wools, textiles, lattices, nano/microstructures, mesostructured materials, and sponge-like materials. At least four important classes of UHTM materials are disclosed in this invention: (1) carbon, doped-carbon and carbon alloy materials, (2) materials within the boron-carbon-nitride-X system, (3) materials within the silicon-carbon-nitride-X system, and (4) highly-refractory materials within the tantalum-hafnium-carbon-nitride-X and tantalum-hafnium-carbon-boron-nitride-X system. All of these material classes offer compounds/mixtures that melt or sublime at temperatures above 1800° C.—and in some cases are among the highest melting point materials known (exceeding 3000° C.). In many embodiments, the synthesis/fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical precursor mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). Methods for controlling the growth, composition, and structures of UHTM materials through control of the thermal diffusion region are disclosed. 1. A fibrous material comprising at least a first element and a second element ,a. wherein said first and second elements are at least two of tantalum, hafnium, carbon, boron, nitrogen and an additive element, andb. wherein the concentration of nitrogen, if present, is no greater than 67 atomic percent, and the concentration of the additive element, if present, is no greater than 67 atomic percent, andc. wherein said fibrous material is grown in at least one localized reaction zone from gaseous, liquid, semi-solid, critical, or supercritical precursor fluid mixtures using at least one primary heating means.2. The fibrous material of claim 1 , wherein said first element is ...

Method of making textured ceramics

The invention proposed a novel hot pressing flowing sintering method to fabricate textured ceramics. The perfectly 2-dimensional textured Si3N4 ceramics (Lotgering orientation factor fL 0.9975) were fabricated by this method. During the initial sintering stage, the specimen flowed along the plane which is perpendicular to the hot pressing direction under pressure, through the controlling of the graphite die movement. The rod-like β-Si3N4 nuclei was easily to texture during the flowing process, due to the small size of the β-Si3N4 nuclei and the high porosity of the flowing specimen. After aligned, the β-Si3N4 grains grew along the materials flowing direction with little constraint. textured Si3N4 ceramics fabricated by this invention also showed high aspect ratio. Compared to the conventional hot-forging technique which contained the sintering and forging processes, hot pressing flowing sintering proposed is simpler and lower cost to fabricate textured Si3N4. 1. A method of making textured ceramics , comprising steps of: mixing ingredients , mixing and drying of the ingredients containing silicon nitride powder and sintering aids; b , forming a green part , the powder after drying being dry-pressed through steel die and then cold isostatic pressing to obtain a shaped body; c , making textured ceramic , using flowing hot pressing sintering method to make the green part obtained in above step b to flows in a one-dimensional or two-dimensional directions in order to achieve high-performance ceramics with preferred grain arrangement and anisotropy growth; wherein the hot press applied pressure is 10-50 MPa , and temperature is in the range of 1000-2000° C.2. The method of making textured ceramics according to claim 1 , wherein the sintering aid is selected from the group consisting of alkali metal oxides or rare earth metal oxides.3. The method of making textured ceramics according to claim 1 , wherein the processing steps comprises mixing the ingredients and drying the ...

SiC-NITRIDE OR SiC-OXYNITRIDE COMPOSITE MEMBRANE FILTERS

A filter for the filtration of a fluid includes or is composed of a support element made of a porous ceramic material, the element exhibiting a tubular or parallelepipedal shape including, in its internal portion, a set of adjacent channels separated from one another by walls of the porous inorganic material, in which at least a portion of the channels and/or the external surface are covered with a porous separating membrane layer for contacting the fluid to be filtered circulating in the channels and making possible the tangential or frontal filtration of the fluid. The layer is made of a material including a mixture of silicon carbide and of at least one compound chosen from silicon nitride or silicon oxynitride, the content by weight of elemental nitrogen, with respect to the content by weight of SiC in the material constituting the porous separating membrane layer, is between 0.02 and 0.15.

Sb-Te-Based Alloy Sintered Compact Sputtering Target

An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering. 1. An Sb—Te-based alloy sputtering target having a composition containing Sb and Te as main constituent elements thereof and carbon or boron in an amount of more than 10 at % and equal to or less than 30 at % , having a relative density of 97.85% or more , and having a structure comprising grains of an Sb—Te-based alloy phase and a dispersion of grains of the carbon or boron , wherein the grains of the Sb—Te-based alloy phase have an average size of 3 μm or less and a standard deviation of less than 1.00 , the grains of the carbon or boron have an average size of 0.5 μm or less and a standard deviation of less than 0.20 , and , for the average size of the grains of the Sb—Te-based alloy phase expressed by X and the average size of the grains of the carbon or boron expressed by Y , a ratio Y/X is within a range of from 0.155 to 0.5.2. The Sb—Te-based alloy sputtering target according to claim 1 , containing one or more elements selected from the group consisting of Ag claim 1 , In claim 1 , Si claim 1 , Ge claim 1 , Ga claim 1 , Ti claim 1 , Au claim 1 , Pt claim 1 , and Pd in a total amount of 30 at % or less.3. The Sb—Te- ...

Axial turbine

A turbine assembly includes an axial turbine with an axially arranged series of rotor sections and an external sheath providing structural support for the axial turbine, wherein the sheath is made from dense silicon nitride. Each rotor section includes an outer ring and rotor blades and the outer rings of the rotor sections connect to form a rotating outer casing, wherein the rotor sections are made from reaction bonded silicon nitride.

ELECTROSTATIC CHUCK DEVICE AND METHOD FOR MANUFACTURING ELECTROSTATIC CHUCK DEVICE

An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5×10Ωcm or more in the entire range from 24° C. to 300° C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less. 1. An electrostatic chuck device comprising:a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; andan electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in an interior of the base,{'sup': '15', 'wherein a volume resistivity value of the sintered compact is 0.5×10Ωcm or more in an entire range from 24° C. to 300° C.,'}a graph which shows a relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., andthe amount of metal impurities in the sintered compact other than aluminum and silicon is 100 ppm or less.2. The electrostatic chuck device according ...

DENTAL MILL BLANK, PROCESS FOR PRODUCTION AND USE THEREOF

The invention relates to a coloured zirconia ceramic dental mill blank having fluorescing properties, processes of production such a mill blank and uses thereof, in particular for producing zirconia ceramic dental restorations. The dental mill blank having a shape allowing the dental mill blank to be attached or fixed to a machining device, the dental mill blank comprising a porous zirconia material, the porous zirconia material comprising the oxides Zr oxide calculated as Zr02: from about 80 to about 97 wt.-%, Al oxide calculated as Al203: from about 0 to about 0.15 wt.-%, Y oxide calculated as Y203: from about 1 to about 10 wt-%, Bi oxide calculated as Bi203: from about 0.01 to about 0.20 wt-%, Tb oxide calculated as Tb203: from about 0.01 to about 0.8 wt.-%, and optionally one or two of the following oxides: Er oxide calculated as Er203: from about 0.01 to about 3.0 wt.-%, Mn oxide calculated as Mn02: from about 0.0001 to about 0.08 wt.-%, the porous zirconia material not comprising Fe oxide calculated as Fe203 in an amount of more than about 0.01 wt.-%, wt.-% with respect to the weight of the porous zirconia material. 1. A dental mill blank having a shape allowing the dental mill blank to be attached or fixed to a machining device , the dental mill blank comprising a porous zirconia material , the porous zirconia material comprising the oxides:Zr oxide calculated as ZrO2: from about 80 to about 97 wt.-%,Al oxide calculated as Al2O3: from about 0 to about 0.15 wt.-%,Y oxide calculated as Y2O3: from about 1 to about 10 wt.-%,Bi oxide calculated as Bi2O3: from about 0.01 to about 0.20 wt.-%,Tb oxide calculated as Tb2O3: from about 0.01 to about 0.8 wt.-%,and optionally one or two of the following oxides:Er oxide calculated as Er2O3: from about 0.01 to about 3.0 wt.-%,Mn oxide calculated as MnO2: from about 0.0001 to about 0.08 wt.-%,the porous zirconia material not comprising Fe oxide calculated as Fe2O3 in an amount of more than about 0.01 wt.-%, wt.-% with ...

SILICON NITRIDE CERAMIC MATERIAL FOR MOBILE PHONE REAR COVER AND PREPARATION METHOD THEREFOR

A silicon nitride ceramic material for a mobile phone rear cover and a preparation method therefor. The method comprises: using a mixture of a silicon source, a colorant, and a sintering aid as raw materials, mixing the raw material components, and performing shaping and sintering to obtain the silicon nitride ceramic material. The toughness of the silicon nitride ceramic material can reach more than 12 MPa·m; the thermal conductivity thereof can reach 40 to 70 W/m·K; and a dielectric loss thereof is 10. 1. A preparation method of silicon nitride ceramic for a mobile phone rear cover , comprising:taking a mixture containing a silicon source, a colorant, and a sintering aid as raw materials, mixing each component of the raw materials, followed by shaping and sintering to obtain the silicon nitride ceramic.2. The preparation method of claim 1 , wherein the mass ratio of the silicon source claim 1 , the colorant claim 1 , and the sintering aid is (85 to 96.5):(5 to 0.5):(10 to 3) claim 1 , and the mass of the silicon source is converted into that of silicon nitride for calculation.310-. (canceled)11. The preparation method of claim 1 , whereinthe silicon source is a silicon nitride powder and/or a silicon powder, andthe particle size of the silicon nitride powder ranges from 0.5 μm to 20 μm, and/or the particle size of the silicon powder ranges from 0.2 μm to 30 μm.12. The preparation method of claim 1 , wherein the colorant is selected from the group consisting of colorants (i) to (iv) as follows:(i) a metallic element, which is selected from the group consisting of Fe, V, Pb, Co, Cr, Mn, Ni, Cu, and Hf;{'sub': (1-x)', 'x', '(1-x)', 'x', '(1-x)', 'x, '(ii) an oxide, carbide, and nitride of a transition metal and a solid solution thereof, the transition metal being selected from the group consisting of Ti, Zr, and Hf, and the solid solution being selected from the group consisting of TiNC, ZrNC, and HfNC, wherein x is greater than zero and less than 1;'}{'sup': '−', '( ...

SiC SINTERED BODY, HEATER AND METHOD FOR PRODUCING SiC SINTERED BODY

Provided is a SiC sintered body which contains nitrogen atoms, wherein a ratio R/Rof a maximum volume resistivity Rof the sintered body to an average volume resistivity Rof the sintered body is 1.5 or lower; a ratio R/Rof a minimum volume resistivity Rof the sintered body to the average volume resistivity Ris 0.7 or higher; and a relative density of the sintered body is 98% or higher. 1. A SiC sintered body which contains nitrogen atoms ,{'sub': max', 'ave', 'max', 'ave', 'min', 'ave', 'min', 'ave, 'wherein a ratio R/Rof a maximum volume resistivity Rof the SiC sintered body to an average volume resistivity Rof the SiC sintered body is 1.5 or lower; a ratio R/Rof a minimum volume resistivity Rof the SiC sintered body to the average volume resistivity Ris 0.7 or higher; and'}a relative density of the SiC sintered body is 98% or higher,the volume resistivity of the SiC sintered body is s a value obtained by measuring the SiC sintered body by a four-probe measurement method,the average volume resistivity of the SiC sintered body is an average value of five measured values obtained for any five places in a plane of the SiC sintered body,the maximum volume resistivity of the SiC sintered body is a maximum value among the five measured values, andthe minimum volume resistivity of the SiC sintered body is the minimum value among the five measured values.2. The SiC sintered body according to claim 1 , wherein a content of the nitrogen atoms in the SiC sintered body is 5000 ppm or less.3. A heater comprised of the SiC sintered body of .4. A method for producing a SiC sintered body claim 1 , comprising:a step of mixingat least one SiC powder having an average particle diameter of 0.1 μm or higher and 1.0 μm or lower and selected from the group consisting of α-SiC powder and β-SiC powder,a SiC ultrafine powder having an average particle diameter of lower than 0.1 μm and synthesized in a gas phase by plasma CVD, and{'sub': 3', '4, 'SiNparticles having an average particle ...

Scheelite Microwave Dielectric Ceramic Material and Preparation Method Thereof

An embodiment of the present invention provides a scheelite microwave dielectric ceramic material. For example, a structure expression of the scheelite microwave dielectric ceramic material can be Bi(VInMo)MoO. In this embodiment, 0.06≦x≦0.12 An embodiment of the present invention further provides a method for preparing a scheelite microwave dielectric ceramic material. 1. A scheelite microwave dielectric ceramic material , wherein a structure expression of the scheelite microwave dielectric ceramic material is{'br': None, 'sub': 1-x', 'x/3', '2x/3', '4, 'Bi(VInMo)MoO,'}where 0.06≦x≦0.12.2. The scheelite microwave dielectric ceramic material according to claim 1 , wherein 0.08≦x≦0.10.3. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a microwave dielectric constant εof the scheelite microwave dielectric ceramic material is 70-75 claim 1 , a quality factor value Q×f is 9230 GHz-10110 GHz claim 1 , and a temperature coefficient of resonant frequency τis −210 ppm/° C. to +135 ppm/° C.4. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a microwave dielectric constant εof the scheelite microwave dielectric ceramic material is 70-75.5. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a quality factor value Q×f is 9230 GHz-10110 GHz.6. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a temperature coefficient of resonant frequency τis −210 ppm/° C. to +135 ppm/° C.7. A method for preparing a scheelite microwave dielectric ceramic material claim 1 , the method comprising:{'sub': 2', '5', '2', '3', '3', '2', '3', 'Bi', '1-x', 'x/3', '2x/3', '4, 'mixing the materials that include VO, InO, MoO, and BiOaccording to a stoichiometry ratio consistent with a general formula (VInMo)MoO, where 0.06≦x≦0.12;'}ball-milling the materials for 3 to 6 hours;drying the ball-milled materials at 100° C-200° C.;sieving the dried ball-milled materials; ...

SENSOR FOR DETERMINING GAS PARAMETERS

A high-temperature sensor, having at least one completely ceramic heater and at least one first sensor structure arranged on a first side of the completely ceramic heater, at least in areas. And a method for producing a sensor. 115-. (canceled)16. A high-temperature sensor , comprising:at least one completely ceramic heater; andat least one first sensor structure arranged on a first side of the completely ceramic heater, at least in areas.17. The sensor according to claim 16 , wherein the completely ceramic heater comprises:at least one electrically conductive ceramic; wherein the electrically conductive ceramic makes contact with electrodes in at least two positions separate from one another; andat least one electrically insulating ceramic, wherein the electrically insulating ceramic completely encloses the electrically conductive ceramic.18. The sensor according to claim 17 , wherein the electrically conductive ceramic comprises ceramic powders comprising silicide claim 17 , carbonate claim 17 , and/or nitride powder claim 17 , and at least one element from the tungsten claim 17 , tantalum claim 17 , niobium claim 17 , titanium claim 17 , molybdenum claim 17 , zirconium claim 17 , hafnium claim 17 , vanadium claim 17 , and/or chromium group claim 17 , and in that the electrically insulating ceramic is formed from heat-conducting ceramic powders comprising silicon nitride and/or aluminum nitride.19. The sensor according to claim 16 , wherein the completely ceramic heater has a thickness between 0.5 mm and 1.5 mm.20. The sensor according to claim 16 , wherein the sensor comprises:at least one first insulating layer arranged on the first side of the completely ceramic heater, at least in areas; and/orat least one second insulating layer arranged, at least in areas, on a second side of the completely ceramic heater, which is opposite the first side.21. The sensor according to claim 20 , wherein the first insulating layer and/or the second insulating layer comprises an ...

PROTON CONDUCTOR, SOLID ELECTROLYTE LAYER FOR FUEL CELL, CELL STRUCTURE, AND FUEL CELL INCLUDING THE SAME

A solid electrolyte layer contains a proton conductor having a perovskite structure, the proton conductor being represented by formula (1): BaZrCeMO(where element M is at least one selected from the group consisting of Y, Yb, Er, Ho, Tm, Gd, and Sc, 0.85≦x<0.98, 0.70≦y+z<1.00, a ratio of y/z is 0.5/0.5 to 1/0, and δ is an oxygen vacancy concentration). 2. The solid electrolyte layer for a fuel cell according to claim 1 , wherein 0.85≦x≦0.96.3. The solid electrolyte layer for a fuel cell according to claim 1 , wherein 0.75≦y+z≦0.90.4. The solid electrolyte layer for a fuel cell according to claim 1 , wherein the element M is at least one selected from the group consisting of Y and Yb.5. The solid electrolyte layer for a fuel cell according to claim 1 ,wherein letting a thickness of the solid electrolyte layer be T, letting a ratio of Ba at a position 0.25T from one surface of the solid electrolyte layer be x1, and letting a ratio of Ba at a position 0.25T from the other surface of the solid electrolyte layer be x2, x1>x2 is satisfied, andthe other surface is brought into contact with a cathode of a fuel cell.6. The solid electrolyte layer for a fuel cell according to claim 1 , wherein the ratio of y/z claim 1 , namely claim 1 , Zr/Ce claim 1 , is 0.5/0.5 to 0.9/0.1.8. A fuel cell comprising:{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, 'the cell structure according to ;'}an oxidant channel to supply an oxidant to the cathode; anda fuel channel to supply a fuel to the anode. The present invention relates to a proton conductor, and in particular, to an improvement in a solid electrolyte layer for a fuel cell.Fuel cells include a cathode, an anode, a cell structure including a solid-electrolyte layer arranged therebetween, an oxidant channel to supply an oxidant to the cathode, and a fuel channel to supply a fuel to the anode. Perovskite oxides, such as BaCeYO(BCY) and BaZrYO(BZY), having proton conductivity are highly conductive in an intermediate temperature range ...

Ferrite particles for bonded magnets, resin composition for bonded magnets, and molded product using the same

The present invention relates to ferrite particles for bonded magnets having a bulk density of not more than 0.75 g/cm 3 and a degree of compaction of not less than 65%, a resin composition for bonded magnets using the ferrite particles and the composition, and a rotor. The ferrite particles for bonded magnets and the resin composition for bonded magnets according to the present invention are capable of providing a bonded magnet molded product having a good tensile elongation and an excellent magnetic properties.

DIELECTRIC MATERIAL AND MULTILAYER CERAMIC CAPACITOR INCLUDING THE SAME

A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided. 1. A dielectric material comprising:x molar parts of Ba, c molar parts of Si, d molar parts of Mg, e molar parts of Mn, f molar parts of V, and g molar parts of rare earth element Re (Re contains at least Y), wherein x=100(1−a)+b, 0.05 Подробнее

Aluminium Oxide Ceramic Material

An aluminium oxide ceramic material containing the following components: 2. The aluminium oxide ceramic material according to claim 1 , which comprises at least 96.4 wt.-% AlOand in a range of 96.4 to 99.9 claim 1 , wt.-% AlO.3. The aluminium oxide ceramic material according to claim 1 , which comprises 0.005 to 0.09 wt.-% MgO.4. The aluminium oxide ceramic material according to claim 1 , which comprises 0.05 to 0.9 wt.-% Eu claim 1 , calculated as EuO.5. The aluminium oxide ceramic material according to claim 1 , which comprises 0.01 to 1.0 wt.-% Nd claim 1 , calculated as NdO.6. The aluminium oxide ceramic material according to claim 1 , which comprises 0.001 to 2.0 wt.-% colouring oxides claim 1 , wherein the colouring oxides are selected from oxides of Fe claim 1 , Cr claim 1 , Mn claim 1 , Co claim 1 , Cu claim 1 , Ag claim 1 , Er claim 1 , Pr claim 1 , Tb claim 1 , Ce claim 1 , Ho claim 1 , Zr and La.7. The aluminium oxide ceramic material according to claim 1 , which comprises at least two layers differing in colour claim 1 , and comprising a gradient which exhibits a continuous change in colour.8. The aluminium oxide ceramic material according to claim 1 , which comprises not more than 0.5 wt.-% of other oxides.9. The aluminium oxide ceramic material according to claim 1 , which comprises a europium aluminate crystal phase comprising rod-shaped or platelet-shaped europium aluminate crystals.10. The aluminium oxide ceramic material according to claim 9 , which comprises rod-shaped europium aluminate crystals which have an average width of 0.01 to 0.25 μm and/or an average width to length ratio of 1:1 to 1:10.11. The aluminium oxide ceramic material according to claim 1 , which is not densely sintered and is pre-sintered.12. The aluminium oxide ceramic material according to claim 1 , which has a relative density in the range of 45 to 90% claim 1 , based on the true density of the aluminium oxide ceramic material.13. A process for preparing the aluminium oxide ...

CUBIC BORON NITRIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF, AND TOOL

There are provided a cubic boron nitride sintered body having a surface also excellent in adhesiveness to a ceramic coating film, while having excellent wear resistance and defect resistance, and a manufacturing method thereof, and a tool. The cubic boron nitride sintered body of the present invention includes 60.0 to 90.0% by volume of cubic boron nitride, the remainder being a binder phase, wherein the binder phase contains: at least any of a nitride, a boride, and an oxide of Al; at least any of a carbide, a nitride, a carbonitride, and a boride of Ti; and a compound represented by the following formula (1): 1. A cubic boron nitride sintered body comprising 60.0 to 90.0% by volume of cubic boron nitride , the remainder being a binder phase , wherein{'claim-text': {'br': None, 'sub': ['2', 'x', '(1-x)', '2'], '#text': 'WNiCoB(0.40≤x<1)\u2003\u2003(1)'}, '#text': 'the binder phase comprises: at least any of a nitride, a boride, and an oxide of Al; at least any of a carbide, a nitride, a carbonitride, and a boride of Ti; and a compound represented by the following formula (1):'}2. The cubic boron nitride sintered body according to claim 1 , wherein in an X-ray diffraction spectrum using CuKα as a radiation source claim 1 , a ratio IA/IB of diffraction peak intensity IA attributed to a (112) plane of the compound represented by the formula (1) to diffraction peak intensity IB attributed to a (111) plane of cubic boron nitride is in a range of 0.330 to 0.750.3. The cubic boron nitride sintered body according to claim 1 , comprising TiBas the boride of Ti claim 1 , wherein{'sub': '2', '#text': 'in the X-ray diffraction spectrum using CuKα as the radiation source, a ratio IC/IB of diffraction peak intensity IC attributed to a (101) plane of TiBto the diffraction peak intensity IB attributed to the (111) plane of cubic boron nitride is in a range of 0.140 to 0.750.'}4. The cubic boron nitride sintered body according to claim 1 , having an electrical resistivity at 25° C. ...

Silicon Bond Coat with Amorphous Structure and Methods of Its Formation

A coated component, along with methods of its formation and use, is provided. The coated component includes a substrate having a surface; a silicon-based bond coating on the surface of the substrate; and a barrier coating on the silicon-based bond coating. The silicon-based bond coating comprises amorphous silicon phase having grains of crystalline silicon (e.g., having an average size of about 0.03 μm to about 3 μm) distributed therein. The amorphous silicon phase may be formed of pure silicon metal, or may be formed from silicon metal with boron, oxygen, and/or nitrogen dispersed therein. 1. A coated component comprising:a substrate having a surface;a silicon-based bond coating on the surface of the substrate, wherein the silicon-based bond coating comprises amorphous silicon phase having grains of crystalline silicon distributed therein; anda barrier coating on the silicon-based bond coating.2. The coated component as in claim 1 , the amorphous silicon phase comprises pure silicon metal.3. The coated component as in claim 1 , the amorphous silicon phase comprises silicon metal with boron claim 1 , oxygen claim 1 , and/or nitrogen dispersed therein.4. The coated component as in claim 1 , wherein the grains of crystalline silicon form about 0.1% to about 99% by volume of the silicon-based bond coating.5. The coated component as in claim 1 , wherein the grains of crystalline silicon form about 1% to about 65% by volume of the silicon-based bond coating.6. The coated component as in claim 1 , and wherein the grains of crystalline silicon form about 1% to about 40% by volume of the silicon-based bond coating.7. The coated component as in claim 1 , wherein the grains of crystalline silicon have an average size of about 0.03 μm to about 3 μm.8. The coated component as in claim 1 , wherein the grains of crystalline silicon are distributed substantially uniformly throughout the amorphous silicon phase.9. The coated component as in claim 1 , wherein the amorphous silicon ...

CRYSTAL ORIENTED CERAMICSCRYSTAL ORIENTED CERAMICS, THE PRODUCTION PROCESS, AND HEAT RADIATION MATERIAL

A production process for a crystal oriented ceramics includes: a first step of preparing composite particles formed of particles having magnetic anisotropy having magnetic susceptibility anisotropy and seed particles having magnetic susceptibility anisotropy less than or equal to 1/10 of the magnetic susceptibility anisotropy of the particles having magnetic anisotropy and are formed of an inorganic compound having an anisotropic shape in which a crystal axis intended to be corresponds to a minor axis or a major axis; a second step of adding raw material powder including the composite particles to a solvent to prepare a slurry a third step of preparing a green compact by disposing the slurry in a static magnetic field of >0.1 tesla and drying the slurry in a state in which crystal axes of the seed particles in a major axis direction are in one direction; and a fourth step of sintering the green compact. 1. A production process for a crystal oriented ceramics comprising:a first step of preparing composite particles (C) formed of particles having magnetic anisotropy (A) which have a magnetic susceptibility anisotropy and seed particles (B) which have a magnetic susceptibility anisotropy less than or equal to 1/10 of the magnetic susceptibility anisotropy of the particles having magnetic anisotropy (A) and are formed of an inorganic compound having an anisotropic shape in which a crystal axis intended to be corresponds to a minor axis or a major axis;a second step of adding raw material powder (D) which includes the composite particles (C) to a solvent to prepare a slurry including the raw material powder (D) and the solvent;a third step of preparing a green compact by disposing the slurry in a static magnetic field of 0.1 tesla (T) or greater and drying the slurry in a state in which crystal axes of the seed particles (B) in a major axis direction are in one direction; anda fourth step of sintering the green compact.2. The production process for a crystal oriented ...

CERAMIC MATERIAL AND ELECTROSTATIC CHUCK DEVICE

Provided is a composite sintered body for an electrostatic chuck, which is not easily broken even if it is exposed to high-power plasma. Further, provided are an electrostatic chuck device using such a composite sintered body for an electrostatic chuck and a method of manufacturing a composite sintered body for an electrostatic chuck. The composite sintered body for an electrostatic chuck is a composite sintered body including an insulating ceramic and silicon carbide, in which crystal grains of the silicon carbide are dispersed in at least one selected from the group consisting of a crystal grain boundary and a crystal grain of a main phase formed by sintering crystal grains of the insulating ceramic. 1. A ceramic material that is a composite sintered body including an insulating ceramic and silicon carbide ,wherein crystal grains of the silicon carbide are dispersed in at least one selected from the group consisting of a crystal grain boundary and a crystal grain of a main phase formed by sintering crystal grains of the insulating ceramic,a content of crystal grains having a β-SiC type crystal structure is more than 60% by volume with respect to a total amount of the crystal grains of the silicon carbide,the composite sintered body includes pores which are present in a crystal grain boundary, anda ratio of an apparent density of the composite sintered body with respect to a hypothetical true density when the composite sintered body is assumed not to include the pores is 97% or more.2. The ceramic material according to claim 1 ,wherein the ceramic material includes a portion in which the crystal grains having the β-SiC type crystal structure are sintered with each other.3. The ceramic material according to claim 1 ,wherein a grain diameter obtained from an X-ray diffraction result of the crystal grain of the silicon carbide is 50 nm or more.4. The ceramic material according to claim 1 ,wherein the insulating ceramic is aluminum oxide.5. A ceramic material which is ...

METHOD FOR FORMING HIGH HEAT-RESISTANT COATING FILM USING LIQUID CERAMIC COMPOSITION AND HIGH HEAT-RESISTANT COATING FILM PREPARED THEREBY

The present invention relates to a high heat-resistant/oxidation-resistant/flame retardant□non-flammable liquid ceramic coating film for protecting an exterior of an apparatus in an extreme environment. Provided are a method of forming a high heat-resistant coating film including: (a) preparing a liquid ceramic filling agent by mixing a ceramic filler including iron (III) oxide (FeO) powder, a diluent, and an inorganic nanosol; (b) applying the liquid ceramic filling agent to at least one surface of a substrate to form a coating film; and (c) curing the coating film by drying the substrate, and a high heat-resistant coating film prepared thereby.

Cubic boron nitride sintered body and cutting tool

A cBN sintered body contains cBN particles whose proportion is 85-97% by volume, and a binding phase whose proportion is 3-15% by volume. The cBN sintered body contains Al whose ratio to the entirety of the cBN sintered body is 0.1-5% by mass, and Co whose mass ratio to the Al is 3 to 40, and includes Al3B6Co20.

Composition for use as an electrolyte in a protonic ceramic fuel cell and a fuel cell thereof

The present invention relates to a solid oxide fuel cell especially protonic ceramic fuel cell which can operate at intermediate temperature and fuel cell thereof. The composition comprising a formula BaCe 0.7 Zr 0.25-x Y x Zn 0.05 O 3-δ or BaCe 0.7 Zr 0.1 Y 0.2-x Pr x O 3-δ , wherein x=0.05, 0.1, 0.15, 0.2 or 0.25 to vary Zr and Y percentage at the B-site, and Ba=100%, Ce=70%; and Zn=5%.

HIGH STRENGTH TRANSPARENT CERAMIC USING CORUNDUM POWDER AND METHODS OF MANUFACTURE

High strength transparent corundum ceramics using corundum powder and methods of manufacture are disclosed. The method of forming transparent corundum ceramics includes milling corundum powder in aqueous slurry with beads. The method further includes processing the slurry by a liquid shaping process to form a gelled body. The method further includes sintering the gelled body in air and pressing the gelled body by hot isostatic pressing to form a ceramic body. 1. A method of forming transparent corundum ceramics , comprising:milling corundum powder in an aqueous slurry with beads;processing the slurry by a liquid shaping process to form a gelled body;sintering the gelled body in air; andpressing the gelled body by hot isostatic pressing to form a ceramic body.2. The method of claim 1 , wherein the corundum powder has a BET of 15-24 m/g.3. The method of claim 2 , wherein the corundum powder has a BET of 17-21 m/g.4. The method of claim 3 , wherein the sintering of the ceramic body in air is at a temperature between 1150° C.-1170° C. and the hot isostatic pressing is provided in Argon claim 3 , Nitrogen or Oxygen at a temperature between 1100° C.-1150° C.5. The method of claim 4 , wherein the sintering is performed at 1-10 K/min claim 4 , preferred 5 K/min. to 950° C. and 2 K/min. to final temperature and the hot isostatic pressing is performed at between 50 and 200 MPa.6. The method of claim 5 , wherein the sintering is performed at 5 K/min.7. The method of claim 4 , wherein the slurry is aqueous slurry comprising distilled water claim 4 , stabilisator for the repulsion of the corundum particles and a sintering aid.8. The method of claim 7 , wherein the sintering aid is MgO or MgO precursors.9. The method of claim 4 , wherein the beads are dense sintered corundum beads with sub-μm grain size.10. The method of claim 9 , wherein a relation of the corundum beads to powder is between 1:2 and 1:4.11. The method of claim 9 , wherein the processing comprises adding the ...

ELABORATION OF AN ADVANCED CERAMIC MADE OF RECYCLED INDUSTRIAL STEEL WASTE

A ceramic and a method of forming a ceramic including milling steel slag exhibiting a diameter of 5 mm of less to form powder, sieving the powder to retain the powder having a particle size in the range of 20 to 400 removing free iron from the powder with a magnet, heat treating the powder at a temperature in the range of 700° C. to 1200° C. for a time period in the range of 1 hour to 10 hours and oxidizing retained iron in the powder, compacting the powder at a compression pressure in the range of 20 MPa to 300 MPA, and sintering the powder at a temperature in the range of 700° C. to 1400° C. for a time period in the range of 0.5 hours to 4 hours to provide a ceramic. 1. A method of forming a ceramic from steel slag , comprising:milling steel slag exhibiting a diameter of 5 mm of less to form powder;sieving said powder to retain said powder having a particle size in the range of 20 μm to 400 μm;removing free iron from said powder with a magnet;heat treating said powder at a temperature in the range of 700° C. to 1200° C. for a time period in the range of 1 hour to 10 hours and oxidizing retained iron in said powder;compacting said powder at a compression pressure in the range of 20 MPa to 300 MPa; andsintering said powder at a temperature in the range of 700° C. to 1400° C. for a time period in the range of 0.5 hours to 4 hours to provide a ceramic.2. The method of claim 1 , further comprising preheating said powder prior to sintering wherein said green compact is preheated at a rate of 1 K/min to 10 K/min.3. The method of claim 1 , wherein said sintering is performed after compacting claim 1 , wherein said compression pressure is in the range of 30 MPa to 300 MPa claim 1 , and said sintering temperature is in the range of 800° C. to 1100° C.4. The method of claim 3 , wherein said compression pressure in the range of 120 MPa to 180 MPa.5. The method of claim 1 , wherein sintering is performed concurrently with said compacting.6. The method of claim 5 , wherein said ...

COMPOSITE MATERIAL BASED ON C/SIC FIBERS WITH ULTRA REFRACTORY, HIGH TENACITY AND ABLATION RESISTANT MATRIX

The present invention relates to a process for the production of fiber-reinforced composite materials with an ultra-refractory, high tenacity, high ablation resistant matrix with self-healing properties, prepared from highly sinterable slurries. The composite material is produced using techniques of infiltration and drying at ambient pressure or under vacuum, and consolidated by sintering with or without the application of gas or mechanical pressure. 1. A process for the preparation of an ultra-refractory composite ceramic material comprising:(i) preparing at least one preform comprising fibers selected from among carbon fibers, silicon carbide fibers and mixtures thereof;(ii) infiltrating the at least one preform with a ceramic suspension comprising: [{'sub': 2', '2', '2, '≥70 vol. % of an ultra-refractory ceramic component selected from among ZrB, HfB, TaB, ZrC, HfC, TaC and mixtures thereof;'}, {'sub': 2', '3', '4, '≤10 vol. %, of a sintering aid selected from among ZrSi, SiNand mixtures thereof; and'}, '≤20 vol. %, of a Si compound selected from SiC, at least one organic precursor of SiC and mixtures thereof; and, '(a) a mixture of ceramic phases comprising(b) a dispersing medium selected from water, at least one organic solvent and mixtures thereof, thereby obtaining a composite material;{'sup': '5', '(iii) drying the composite material at a pressure less than or equal to about 1×10Pa; and'}(iv) consolidating the dried composite material at a temperature comprised in the range of 1700°−2000° C.2. The process according to claim 1 , wherein the fibers are carbon fibers.3. The process according to claim 1 , wherein the fibers are present in the ultra-refractory composite ceramic material in an amount comprised in the range of 30-70 vol. %.4. The process according to claim 1 , wherein the mixture of ceramic phases comprises ZrB.5. The process according to claim 1 , wherein the ultra-refractory ceramic component of step (ii) is a powder having a particle size ≤5 μm. ...

CERAMIC LAMINATE

The present invention provides a ceramic laminate having excellent mechanical properties, heat dissipation property, insulating property, heat resistance and anti-reactivity, and particularly an insulative heat dissipating body having an excellent thermal cycle reliability and a high withstand voltage. 1. A ceramic laminate in which a ceramic film is formed on a metal layer , wherein the ceramic film has a minimum film thickness of 1 μm or more , contains silicon nitride and inevitable impurities , and has silicon nitride crystal grains having an average grain size of 300 nm or less in the film thickness direction and an average grain size of 500 nm or less in the in-plane direction.2. The ceramic laminate according to claim 1 , wherein the ceramic film has a porosity of less than 3%.3. The ceramic laminate according to claim 1 , wherein the ceramic film has a minimum film thickness at least 1.5 times larger than a maximum height roughness of the metal layer.4. The ceramic laminate according to claim 1 , wherein the ceramic film has silicon nitride crystal grains having an average grain size of 150 nm or less in the film thickness direction and an average grain size of 250 nm or less in the in-plane direction.5. The ceramic laminate according to claim 4 , wherein the ceramic film has silicon nitride crystal grains having an average grain size of 100 nm or less in the film thickness direction and an average grain size of 150 nm or less in the in-plane direction.6. The ceramic laminate according to claim 1 , wherein the ceramic film contains silicon nitride whose proportion of β-silicon nitride in the silicon nitride exceeds 50 wt % claim 1 , and inevitable impurities.7. The ceramic laminate according to claim 6 , wherein the ceramic film has a ratio of the X-ray diffraction intensity I (210) of (210) plane to the X-ray diffraction intensity I (101) of (101) plane of the β-silicon nitride crystal exceeding 0.9.8. The ceramic laminate according to claim 7 , wherein the ...

BORON CARBIDE SINTERED BODY AND ETCHER INCLUDING THE SAME

A boron carbide sintered body includes necked boron carbide-containing particles. The thermal conductivity of the boron carbide sintered body at 400° C. is 27 W/m·K or less and the ratio of the thermal conductivity of the boron carbide sintered body at 25° C. to that of the boron carbide sintered body at 800° C. is 1:0.2 to 1:3. 1. A boron carbide sintered body comprising necked boron carbide-containing particles wherein the thermal conductivity of the boron carbide sintered body at 400° C. is 27 W/m·K or less and the ratio of the thermal conductivity of the boron carbide sintered body at 25° C. to that of the boron carbide sintered body at 800° C. is 1:0.2 to 1:3.2. The boron carbide sintered body according to claim 1 , wherein the particles comprise a particle diameter (D) of 1.5 μm or less.3. The boron carbide sintered body according to claim 1 , wherein the boron carbide sintered body comprises a surface roughness (Ra) of 0.1 μm to 1.2 μm.4. The boron carbide sintered body according to claim 1 , wherein the boron carbide sintered body comprises a porosity of 3% or less.5. The boron carbide sintered body according to claim 1 , wherein the boron carbide sintered body comprises an average surface or cross-sectional pore diameter of 5 μm or less.6. The boron carbide sintered body according to claim 1 , wherein the area of pores comprising an average surface or cross-sectional diameter of 10 μm or more accounts for 5% or less of the area of all pores in the boron carbide sintered body.7. The boron carbide sintered body according to claim 1 , wherein the boron carbide sintered body does not form particles upon contact with fluorine ions or chlorine ions in a plasma etcher.8. The boron carbide sintered body according to claim 1 , wherein the etch rate of the boron carbide sintered body is 55% or less of that of silicon.9. The boron carbide sintered body according to claim 1 , wherein the etch rate of the boron carbide sintered body is 70% or less of that of CVD-SiC.10. ...

CUBIC BORON NITRIDE COMPOSITE MATERIAL, METHOD OF USING IT, METHOD OF MAKING IT AND TOOL COMPRISING IT

A composite material and a method of using the composite material. The composite material consists of at least 65 volume percent cubic boron nitride (cBN) grains dispersed in a binder matrix, the binder matrix comprising a plurality of microstructures bonded to the cBN grains and a plurality of intermediate regions between the cBN grains; the microstructures comprising nitride or boron compound of a metal; and the intermediate regions including a silicide phase containing the metal chemically bonded with silicon; in which the content of the silicide phase is 2 to 6 weight percent of the composite material, and in which the cBN grains have a mean size of 0.2 to 20 μm. 127-. (canceled)29. The method as claimed in claim 28 , in which the silicide phase precursor is in powder form claim 28 , the mean grain size of the grains of the silicide phase powder being 0.1 to 5 microns.30. The method as claimed in claim 28 , in which the metal comprised in the silicide phase precursor is titanium (Ti).31. The method as claimed in claim 30 , in which the silicide precursor comprises a titanium silicide material having the chemical formula TiSi claim 30 , where x is 0.9 to 1.1 and y is 0.9 to 1.1.3233-. (canceled)34. The method as claimed in claim 28 , including producing the silicide phase claim 28 , bycombining the metal and Si in elemental form such that the metal and the Si will be capable of reacting with each, forming a pre-reaction combination;treating the pre-reaction combination such that the metal reacts with the Si to form reacted material comprising the silicide phase; andcomminuting the reacted material to provide a plurality of the grains of the silicide phase.35. The method as claimed in claim 34 , including comminuting the reacted material by means of attrition milling.37. (canceled) This disclosure relates generally to composite material comprising cubic boron nitride (cBN) dispersed in a binder matrix comprising metal silicide material; machine tools comprising ...

PROBE CARD BOARD, PROBE CARD, AND INSPECTION APPARATUS

A probe card board in the present disclosure includes a plurality of through holes designed to receive a probe brought into contact with a measurement object. The probe card board is composed of silicon nitride based ceramics. The probe card board includes a first surface opposed to the measurement object and a second surface located opposite to the first surface. The probe card board contains a plurality of crystal phases of metal silicide. Metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten. 1. A probe card board , comprising:a plurality of through holes designed to receive a probe brought into contact with a measurement object, whereinthe probe card board further comprises silicon nitride based ceramics, anda first surface opposed to the measurement object and a second surface located opposite to the first surface; andthe probe card board contains a plurality of crystal phases of metal silicide, andmetal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten.2. The probe card board according to claim 1 , wherein a granular body composed of only metal constituting the metal silicide is not exposed onto the first surface.3. The probe card board according to claim 1 , wherein the first surface contains melilite whose content is 5 mass % or less.4. The probe card board according to claim 1 , wherein the first surface comprises void holes having a maximum length of 94 μm or less.5. The probe card board according to claim 1 , wherein the silicon nitride based ceramics contains at least 50 mass % or more of silicon nitride relative to 100 mass % of all ingredients constituting ceramics.6. The probe card board according to claim 1 , wherein kurtosis (Rku) of the first surface obtainable from a roughness curve is 2 to 16.7. The probe card ...

Oxide ceramic and ceramic electronic component

An oxide ceramic expressed by the general formula Sr 2-x Ba x Co 2-y Mg y Fe 12-z Al z O 22 , where 0.7≦x≦1.3, 0<y≦0.8, and 0.8≦z≦1.2.

BOND COATINGS HAVING A SILICON-PHASE CONTAINED WITHIN A REFRACTORY PHASE

A coated component, along with method of forming the same, is provided. The coated component may include a substrate having a surface, a silicon-based bond coating on the surface of the substrate, and an EBC on the silicon-based bond coating. The silicon-based bond coating may include a silicon-phase contained within a refractory phase. The silicon-phase, when melted, is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating. Such a coated component may be, in particular embodiments, a turbine component. 1. A coated component comprising:a substrate having a surface;a silicon-based bond coating on the surface of the substrate, wherein the silicon-based bond coating comprises a silicon-phase contained within a refractory phase; andan environmental barrier coating on the silicon-based bond coating, wherein the silicon-phase, when melted, is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating.2. The coated component as in claim 1 , wherein the silicon-phase comprises silicon metal claim 1 , a silicon alloy claim 1 , a silicide having a melting point of about 1500° C. or less claim 1 , or a mixture thereof.3. The coated component as in claim 1 , wherein the silicon-phase comprises silicon metal in an amount of about 50% to 100% by weight.4. The coated component as in claim 1 , wherein the silicon-phase melts at temperatures of about 1400° C. or greater.5. The coated component as in claim 1 , wherein the silicon-phase is molten at a temperature of about 1450° C.6. The coated component as in claim 1 , wherein the silicon-phase and the refractory phase form intertwined continuous phases.7. The coated component as in claim 1 , wherein the refractory phase is a continuous phase claim 1 , and wherein the silicon-phase forms a plurality of discrete particulate phases within the refractory phase.8. The coated ...

SINTERED POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL

A polycrystalline cubic boron nitride, PCBN, material is provided. The material comprises between 30 and 90 weight percent cubic boron nitride (cBN) and a matrix material in which the cBN particles are dispersed. The matrix material comprises particles of an aluminium compound; the matrix material particles having a d50 when measured using a linear intercept technique of no more than 100 nm. 1. A method of making a polycrystalline cubic boron nitride , PCBN , material , the method comprising:mixing matrix precursor particles comprising particles having an average particle size no greater than 100 nm, the matrix precursor particles comprising an aluminium compound, with between 30 and 90 weight percent of cubic boron nitride, cBN, particles having an average particle size of at least 0.2 μm;sintering the mixed particles at a temperature of no less than 1000° C. and no more than 2200° C., and a pressure of at least 6 GPa to form the PCBN material comprising particles of cBN dispersed in a matrix material wherein the matrix material particles have a d75 when measured using an equivalent circle diameter technique of no more than 100 nm.2. The method according to claim 1 , wherein the matrix material further comprises titanium compounds of any of carbon and nitrogen.3. The method according to any one of or claim 1 , wherein the matrix material comprises any of titanium carbonitride claim 1 , titanium carbide claim 1 , titanium nitride claim 1 , titanium diboride claim 1 , aluminium nitride and aluminium oxide.4. The method according to or claim 1 , further comprising sintering at a temperature selected from any one of no more than 1700° C. claim 1 , no more than 1600° C. claim 1 , no more than 1500° C. claim 1 , no more than 1400° C. and no more than 1300° C.5. The method according to or claim 1 , wherein the step of intimately mixing the matrix powder and the cBN powder comprises any of wet acoustic mixing claim 1 , dry acoustic mixing and attrition milling.6. The ...

Single Phase Fiber Reinforced Ceramic Matrix Composites

Ceramic composite materials that are reinforced with carbide fibers can exhibit ultra-high temperature resistance. For example, such materials may exhibit very low creep at temperatures of up to 2700° F. (1480° C.). The present composites are specifically engineered to exhibit matched thermodynamically stable crystalline phases between the materials included within the composite. In other words, the reinforcing fibers, a debonding interface layer disposed over the reinforcing fibers, and the matrix material of the composite may all be of the same crystalline structural phase (all hexagonal), for increased compatibility and improved properties. Such composite materials may be used in numerous applications. 1. A composite comprising matched crystalline phases within the constituents of the composite , the composite comprising:reinforcing hexagonal carbide fibers within a matrix of a hexagonal material, wherein the reinforcing hexagonal carbide fibers include a hexagonal interface coating disposed over the reinforcing hexagonal carbide fibers, such that the hexagonal interface coating, the hexagonal carbide fibers, and the hexagonal material of the matrix all include hexagonal phase structures.2. The composite of claim 1 , wherein the reinforcing hexagonal carbide fibers comprise alpha silicon carbide fibers claim 1 , the alpha silicon carbide having a hexagonal phase structure.3. The composite of claim 1 , wherein the hexagonal interface coating comprises hexagonal boron nitride.4. The composite of claim 1 , wherein the hexagonal interface coating comprises at least one of hexagonal boron nitride claim 1 , hexagonal aluminum nitride claim 1 , or hexagonal molybdenum nitride.5. The composite of claim 1 , wherein the hexagonal material of the matrix comprises a hexagonal carbide material and/or a hexagonal nitride material.6. The composite of claim 1 , wherein the hexagonal material of the matrix comprises alpha silicon carbide having a hexagonal phase structure.7. The ...

SILICON-BASED MATERIALS CONTAINING GALLIUM AND METHODS OF FORMING THE SAME

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of a Ga-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate. Alternatively or additionally, the silicon-based layer can be an outer layer defining a surface of the substrate, with an environmental barrier coating on the surface of the substrate. Gas turbine engines are also generally provided that include such a ceramic component. 1. A ceramic component comprising: a substrate defining a surface; and a silicon-based layer forming a bond coating directly on the surface of the substrate , wherein the silicon layer comprises a silicon-containing material and about 1% to 50% by weight of a Ga-containing compound , wherein the substrate is formed from a ceramic matrix composite (CMC) material.2. (canceled)3. The ceramic component as in claim 1 , wherein the silicon-containing material is silicon metal.4. The ceramic component as in claim 3 , wherein a thermally grown oxide is on the bond coating claim 3 , and wherein the thermally grown oxide layer remains amorphous up to an operating temperature of about 1415° C. or less.5. The ceramic component as in claim 2 , wherein the silicon-containing material comprises a silicide.6. The ceramic component as in claim 5 , wherein a thermally grown oxide is on the bond coating claim 5 , and wherein the thermally grown oxide layer remains amorphous up to an operating temperature of about 1485° C. or less.7. The ceramic component as in claim 5 , wherein the silicide comprises molybdenum silicide claim 5 , rhenium silicide claim 5 , or a mixture thereof.8. The ceramic component as in claim 1 , wherein thesilicon-based layer is an outer layer on the surface of the substrate; and the ceramic component further includesan environmental barrier coating on the silicone-based layer.9. ...

METHOD FOR MANUFACTURING SINGLE SHEET-TYPE GREEN SHEET, METHOD FOR MANUFACTURING SILICON NITRIDE SINTERED BODY, SINGLE SHEET-TYPE GREEN SHEET, AND SILICON NITRIDE SINTERED BODY

A method for manufacturing a single sheet-type green sheet includes a transporting step of transporting a strip-shaped green sheet that contains ceramic along a longitudinal direction thereof, and an irradiation step of irradiating the transported strip-shaped green sheet with a laser beam to cut the strip-shaped green sheet, thereby obtaining a single sheet-type green sheet. 1. A method for manufacturing a single sheet-type green sheet comprising an irradiation step of irradiating a strip-shaped green sheet that contains ceramic with a laser beam to cut the strip-shaped green sheet to obtain a single sheet-type green sheet.2. The method for manufacturing a single sheet-type green sheet according to claim 1 , wherein the laser beam with which the strip-shaped green sheet is irradiated in the irradiation step is emitted from an irradiation portion that emits a carbon dioxide laser beam.3. The method for manufacturing a single sheet-type green sheet according to claim 1 , further comprising a transporting step of transporting the strip-shaped green sheet to the irradiation step along a longitudinal direction of the strip-shaped green sheet.4. The method for manufacturing a single sheet-type green sheet according to claim 3 , further comprising a step of performing doctor blade molding or extrusion molding on a slurry containing ceramic powder to have a strip shape to obtain the strip-shaped green sheet claim 3 , the step being performed before the transporting step.5. The method for manufacturing a single sheet-type green sheet according to claim 4 , wherein the ceramic powder includes silicon nitride powder or aluminum nitride powder.6. A method for manufacturing a silicon nitride sintered body comprising heating and sintering the single sheet-type green sheet that is manufactured by the method for manufacturing a single sheet-type green sheet according to to obtain a silicon nitride sintered body.7. A single sheet-type green sheet having a laser cut surface on at ...

Sinterable powder for making a dense slip casted pressureless sintered sic based ceramic product

A SiC based sinterable powder mixture comprising, by dried weight of said powder: a) a mineral content comprising—silicon carbide (SiC) particles, -mineral boron compound particles, the powder comprising at least 50% by weight of SiC and the total mineral content of the powder being at least 90% by weight, b) at least a water insoluble carbon-containing source, in particular a carbon containing resin, the powder comprising at least 1% by weight, and preferably less than 10% by weight,of said water insoluble carbon-containing source, wherein the average particle size of said sinterable powder is comprised between 0.5 to 2.0 micrometers.

MOISTURE ABSORBENT FOR ORGANIC ELECTROLUMINESCENCE ELEMENT AND PRODUCTION METHOD FOR SAME

A moisture absorbent for an organic EL element having hydrophobicity and no reduction in moisture absorption speed, and a method for producing the moisture absorbent are provided. The moisture absorbent for an organic EL element includes, as a main component, calcium oxide particles each having an alkoxide layer on the surface thereof. Furthermore, the method for producing a moisture absorbent for an organic EL element includes dry-pulverizing calcium oxide in the presence of an alcohol, and thereafter dry-treating the pulverized calcium oxide. 1. A moisture absorbent for an organic EL element , comprising , as a main component , calcium oxide particles each having an alkoxide layer on the surface thereof.2. A method for producing a moisture absorbent for an organic EL element , comprising dry-pulverising calcium oxide in the presence of an alcohol , and thereafter dry-treating the pulverized calcium oxide. The present invention relates to a moisture absorbent for an organic EL (electroluminescence) element and a method for producing the same.Organic luminescent materials that are used in organic EL elements have a problem that they are deteriorated by moisture, and thus the lifetimes thereof are shorten. Therefore, hygroscopic materials moisture getters) have been conventionally disposed so as to absorb moisture that remains in organic EL elements during the production of the elements or moisture that enters from outside.Since moisture getters are required to rapidly absorb moisture, after sealing, barium oxide or strontium oxide, or calcium oxide having an enhanced moisture absorption speed is used. Furthermore, for example, as disclosed in Patent Literature 1, calcium oxide having an enhanced moisture absorption speed can be obtained by calcining calcium hydroxide under a reduced pressure condition.However, calcium oxide has strong alkalinity and thus has a problem that, in the case when it is contained in an organic polymer material such as a resin and used, it ...

MGO-PARTIALLY STABILIZED ZIRCONIA SOLID ELECTROLYTE DOPED WITH MN OR CO

The present disclosure relates to solid electrolyte containing MgO partially stabilized zirconia doped with at least one of Mn and Co. 1. A solid electrolyte containing MgO partially stabilized zirconia doped with at least one of Mn and Co.2. The solid electrolyte according to claim 1 , wherein in the MgO partially stabilized zirconia doped with the Mn or the Co claim 1 , at least one of the Mn and the Co is substituted into a zirconium position to form an oxygen vacancy.3. The solid electrolyte according to claim 1 , wherein the MgO partially stabilized zirconia doped with the Mn or the Co is present only in a cubic phase at room temperature.4. The solid electrolyte according to claim 1 , wherein the MgO partially stabilized zirconia doped with the Mn or the Co has an improved ionic conduction compared to MgO partially stabilized zirconia not doped with Mn or Co.5. A sensor for measuring dissolved oxygen in molten steel claim 1 , wherein the sensor includes the solid electrolyte according to .6. An ion conductivity measuring sensor for measuring an ion conductivity at a temperature of 1500° C. or higher claim 1 , wherein the sensor includes the solid electrolyte according to .7. A method for producing Mn or Co-doped partially stabilized zirconia claim 1 , the method comprising:mixing MgO partially stabilized zirconia powders and manganese oxide powders or cobalt oxide powders to form a mixture; andsintering the mixture.8. The method for producing the Mn or Co-doped partially stabilized zirconia according to claim 7 , wherein a ratio of the MgO partially stabilized zirconia powders and the manganese oxide powders or the cobalt oxide powders is in a range of from 1:5 to 1:10.9. The method for producing the Mn or Co-doped partially stabilized zirconia according to claim 7 , wherein the mixing of the powders includes ball-milling the MgO partially stabilized zirconia powders and the manganese oxide powders or the cobalt oxide powders in solvent.10. The method for ...

POROUS MATERIAL, MANUFACTURING METHOD OF THE SAME, AND HONEYCOMB STRUCTURE

There is disclosed a porous material. The porous material contains aggregates, and a bonding material which bonds the aggregates to one another in a state where pores are formed among the aggregates, the bonding material contains crystalline cordierite, the bonding material further contains a rare earth element or a zirconium element, and a ratio of a mass of the bonding material to a total mass of the aggregates and the bonding material is from 12 to 45 mass %. The bonding material preferably contains, in the whole bonding material, 8.0 to 15.0 mass % of MgO, 30.0 to 60.0 mass % of AlO, 30.0 to 55.0 mass % of SiO, and 1.5 to 10.0 mass % of a rare earth oxide or zirconium oxide. 1. A porous material containing aggregates , and a bonding material which bonds the aggregates to one another in a state where pores are formed among the aggregates ,wherein the bonding material contains crystalline cordierite,the bonding material further contains a rare earth element or a zirconium element, anda ratio of a mass of the bonding material to a total mass of the aggregates and the bonding material is from 12 to 45 mass %.2. The porous material according to claim 1 ,{'sub': 2', '3', '2, 'wherein the bonding material contains, in the whole bonding material, 8.0 to 15.0 mass % of MgO, 30.0 to 60.0 mass % of AlO, 30.0 to 55.0 mass % of SiO, and 1.5 to 10.0 mass % of a rare earth oxide or zirconium oxide.'}3. The porous material according to claim 1 ,wherein the rare earth element is at least one selected from the group consisting of yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.4. The porous material according to claim 1 ,wherein the bonding material contains 50 mass % or more of crystalline cordierite in the whole bonding material.5. The porous material according to claim 1 ,wherein the aggregates are silicon carbide particles or silicon nitride particles.6. The porous ...

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×10 18 cm −3 , and a carrier mobility of 10 cm 2 V −1 sec −1 or higher.

Ceramic material for radome, radome and process for the production thereof

A ceramic material for radome is illustrated comprising: —about 80-95% (% wt) of Si 3 N 4 ; about 5-15% (wt %) of magnesium aluminosilicates including 2.5-12.5% (wt %) of Si0 2 , 0.5-3% (wt %) of MgO and 2-6% (wt %) of Al203; and having a density not lower than 2.5 g/cm 3 and a dielectric constant not exceeding 6.5. A process for producing a radome is also illustrated.

CUBIC BORON NITRIDE SINTERED BODY AND CUTTING TOOL INCLUDING THE SAME

Provided is a cubic boron nitride sintered body including more than or equal to 85 volume percent and less than 100 volume percent of cubic boron nitride particles, and a remainder of a binder, wherein the binder contains WC, Co, and an Al compound, the binder contains WCoB, and, when Irepresents an X-ray diffraction intensity of a (111) plane of the cubic boron nitride particles, Irepresents an X-ray diffraction intensity of a (100) plane of the WC, and Irepresents an X-ray diffraction intensity of a (420) plane of the WCoB, a ratio I/Iof the Ito the Iis more than 0 and less than 0.10, and a ratio I/Iof the Ito the Iis more than 0 and less than 0.40. 1. A cubic boron nitride sintered body comprising more than or equal to 85 volume percent and less than 100 volume percent of cubic boron nitride particles , and a remainder of a binder , whereinthe binder contains WC, Co, and an Al compound,{'sub': 2', '2', '6, 'the binder contains WCoB, and'}{'sub': A', 'C', '2', '21', '6, 'when Irepresents an X-ray diffraction intensity of a (111) plane of the cubic boron nitride particles, In represents an X-ray diffraction intensity of a (100) plane of the WC, and Irepresents an X-ray diffraction intensity of a (420) plane of the WCOB,'}{'sub': C', 'A', 'C', 'A, 'a ratio I/Iof the Ito the Iis more than 0 and less than 0.10, and'}{'sub': C', 'B', 'C, 'a ratio I/Iof the Ito the In is more than 0 and less than 0.40.'}2. The cubic boron nitride sintered body according to claim 1 , wherein{'sub': C', 'A, 'the ratio I/Iis more than 0 and less than 0.05, and'}{'sub': C', 'B, 'the ratio I/Iis more than 0 and less than 0.20.'}3. A cubic boron nitride sintered body comprising more than or equal to 85 volume percent and less than 100 volume percent of cubic boron nitride particles claim 1 , and a remainder of a binder claim 1 , whereinthe binder contains WC, Co, and an Al compound, and{'sub': 2', '21', '6, 'the binder does not contain WCOB.'}4. A cutting tool comprising the cubic boron ...

HIGH STRENGTH, TOUGH, COAL AND COAL BY-PRODUCT BASED COMPOSITE CERAMICS

A composite material, compositions, processes and methods of using coal and coal by-products composite ceramics is provided for use as a safe, non-toxic material for construction, building and architecture components. The composite material disclosed herein is formed from resin/coal aggregates that contain and prevent the release of harmful impurities that naturally occur in both coal and coal by-products while the advantages of coal-based composites are made available to the building industry. The strength, density and porosity of the composites can be tailored within a wide range to fit the final application by controlling the materials, form factor and processing parameters during fabrication. 1. A coal-based ceramic composite aggregate having one resin coating that prevents the release or leaching out of harmful impurities from coal or coal by-products , comprising:a plurality of powdered coal particles and a plurality of powdered coal by-product particles each having a particle size effective diameter ranging from approximately 0.01 micron up to approximately 100 microns;a pre-ceramic polymer resin selected from an inorganic polymer resin mixed with the plurality of powdered coal particles and the plurality of powdered coal by-product particles to form a plurality of resin-coated coal particles, wherein the plurality of resin-coated coal particles bond together during mixing to produce a coal-based composite aggregate with multimodal particle size distribution in an effective diameter range between approximately 5 microns up to approximately 5 millimeters and the coal-based composite aggregate is molded or extruded or subsequently pressure-formed before curing to form a green body composite aggregate that is subsequently pyrolyzed to produce a coal-based ceramic composite aggregate.2. The coal-based ceramic composite aggregate of claim 1 , wherein the coal is selected from at least one of lignite claim 1 , sub-bituminous claim 1 , bituminous claim 1 , and ...

Boron Nitride Agglomerates, Method of Production Thereof and Use Thereof

The invention relates to boron nitride agglomerates, comprising lamellar, hexagonal boron nitride primary particles, which are agglomerated with one another with a preferred orientation, the agglomerates formed being flake-shaped. 119-. (canceled)20. Boron nitride agglomerates , comprising: lamellar , hexagonal boron nitride primary particles , the primary particles having an average particle size of 0.5 to 15 μm , in a binder free , flake-shape agglomerate formed with an essentially parallel alignment of the lamellae; the flake-shaped agglomerate having an average size dup to 3 mm; and wherein the proportion of forming surface , relative to the total surface of the flake-shaped agglomerates , is at least 10%. The present invention relates to boron nitride agglomerates, comprising lamellar, hexagonal boron nitride, a method of production thereof and the use of said agglomerates as filler for polymers and for the hot pressing of boron nitride sintered compacts.Hexagonal boron nitride powder can, owing to its good thermal conductivity, be used as filler for polymers in applications simultaneously requiring good electrical insulation capability of the filler used. Furthermore, boron nitride powder is also used as sintering powder for hot pressing, for applications in metallurgy. Moreover, hexagonal boron nitride powder is used in cosmetic preparations, as a lubricant, as a parting compound in metallurgy and as raw material for the production of cubic boron nitride.Hexagonal boron nitride powder is synthesized industrially by nitriding boric acid in the presence of a source of nitrogen. Ammonia can be used as the source of nitrogen, and then usually calcium phosphate is used as the carrier material for the boric acid. An organic source of nitrogen such as melamine or urea can also be reacted under nitrogen with boric acid or borates. Nitriding is usually carried out at temperatures from 800 to 1200° C. The boron nitride then obtained is largely. amorphous, and it is ...

CERAMIC RESIN COMPOSITE BODY

Provided is a ceramic-resin composite body that has good mass productivity and product properties (heat dissipation properties, insulation properties and adhesive properties), and particularly a ceramic-resin composite that can dramatically improve the heat dissipation properties for electronic devices. The ceramic-resin composite body includes: 35 to 70% by volume of a sintered body having a monolithic structure in which non-oxide ceramic primary particles having an average major diameter of from 3 to 60 μm and an aspect ratio of from 5 to 30 are three-dimensionally continuous; and 65 to 30% by volume of a thermosetting resin composition having an exothermic onset temperature of 180° C. or more and a curing rate of from 5 to 60% as determined with a differential scanning calorimeter, and having a number average molecular weight of from 450 to 4800, wherein the sintered body is impregnated with the thermosetting resin composition. 1. A ceramic-resin composite body comprising:from 35% by volume to 70% by volume of a sintered body having a monolithic structure in which non-oxide ceramic primary particles having an average major diameter of from 3 μm to 60 μm and an aspect ratio of from 5 to 30 are three-dimensionally continuous; andfrom 65% by volume to 30% by volume of a thermosetting resin composition having an exothermic onset temperature of 180° C. or more and a curing rate of from 5% to 60% as determined with a differential scanning calorimeter, and having a number average molecular weight of from 450 to 4800,wherein the sintered body is impregnated with the thermosetting resin composition.2. The ceramic-resin composite body according to claim 1 , wherein the non-oxide ceramic sintered body comprises one or a combination of two or more selected from the group consisting of boron nitride claim 1 , aluminum nitride claim 1 , and silicon nitride.3. The ceramic-resin composite body according to claim 1 , wherein the thermosetting resin composition has a melting ...

FUSED GRAINS OF MAGNESIUM-RICH MAGNESIUM ALUMINATE

A fused grain is essentially composed of a matrix of a magnesium aluminum oxide of spinel structure MgAlOand/or of the MgO—MgAlOeutectic, the matrix including inclusions essentially composed of magnesium oxide, the grain exhibiting the following overall chemical composition, as percentages by weight, expressed in the form of oxides: more than 20.0% and less than 50.0% of AlO, AlOand MgO together represent more than 95.0% of the weight of the grain, wherein the cumulative content of CaO and ZrOis less than 4000 ppm by weight. 1. A fused grain essentially composed of a matrix of a magnesium aluminum oxide of spinel structure MgAlOand/or of the MgO—MgAlOeutectic , said matrix comprising inclusions essentially composed of magnesium oxide , said grain exhibiting the following overall chemical composition , as percentages by weight , expressed in the form of oxides:{'sub': 2', '3, 'more than 20.0% and less than 50.0% of AlO,'}{'sub': 2', '3', '2, 'AlOand MgO together represent more than 95.0% of the weight of said grain, wherein a cumulative content of CaO and ZrOis less than 4000 ppm by weight.'}2. The fused grain as claimed in claim 1 , wherein the cumulative content of CaO and ZrOis less than 3000 ppm.3. The fused grain as claimed in claim 1 , wherein the cumulative content of CaO and ZrOis less than 2500 ppm.4. The fused grain as claimed in claim 1 , wherein the fused grain does not comprise an alumina AlOphase.5. The fused grain as claimed in claim 1 , wherein impurities in the fused grain are essentially CaO claim 1 , ZrO claim 1 , FeO claim 1 , SiO claim 1 , NaO and MnO.6. The fused grain as claimed in claim 1 , comprising less than 2000 ppm of CaO.7. The fused grain as claimed in claim 1 , comprising less than 200 ppm of ZrO.8. The fused grain as claimed in claim 1 , wherein AlOand MgO together represent more than 99.0% of the weight of said grain.9. The fused grain as claimed in claim 1 , wherein the matrix is composed of separate regions of spinel structure and ...

FERRITE MAGNETIC SUBSTANCE AND METHOD OF MANUFACTURING THE SAME

Disclosed is a method of manufacturing a ferrite magnetic substance, including: a first mixing operation of providing a first mixture composed of 47 to 49 wt % of Fe, 16 to 18 wt % of Mn, 5.2 to 7.2 wt % of Zn, and a remainder of oxygen and other inevitable impurities, a second mixing operation of providing a second mixture composed of the first mixture and an additive including, based on 100 parts by weight of the first mixture, 28 to 51 ppm of Si, 140 to 210 ppm of Nb and 155 to 185 ppm of Zr, and a finish operation of producing a ferrite magnetic substance by sintering the second mixture. 1. A method of manufacturing a ferrite magnetic substance , comprising:a first mixing operation of providing a first mixture comprising 47 to 49 wt % of Fe, 16 to 18 wt % of Mn, 5.2 to 7.2 wt % of Zn, and a remainder of oxygen and other inevitable impurities;a second mixing operation of providing a second mixture comprising the first mixture and an additive comprising, based on 100 parts by weight of the first mixture, 28 to 51 ppm of Si, 140 to 210 ppm of Nb and 155 to 185 ppm of Zr; anda finish operation of producing a ferrite magnetic substance by sintering the second mixture.2. The method according to claim 1 , wherein the first mixing operation of providing the first mixture comprises providing the first mixture by mixing 67.8 to 69.9 wt % of iron oxide (FeO) claim 1 , 6.8 to 8.8 wt % of zinc oxide (ZnO) claim 1 , 22.3 to 24.3 wt % of manganese oxide (MnO) and other inevitable impurities claim 1 , which are in a powder phase.3. The method according to claim 2 , further comprising claim 2 , before the first mixing operation of providing the first mixture claim 2 ,a preparation operation of coarsely grinding the iron oxide so that a particle size of the iron oxide is 1.15 μm or less.4. The method according to claim 1 , wherein in the finish operation claim 1 , the ferrite magnetic substance has a density of 4.8 g/cmor more claim 1 , a permeability of 3 claim 1 ,300 or more ...

MODIFIED NI-ZN FERRITES FOR RADIOFREQUENCY APPLICATIONS

Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Cosuch that the relaxation peak associated with the Cosubstitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band. 120-. (canceled)21. A material for radiofrequency applications , the material comprising:a single-phase modified Ni—Zn ferrite formed from a base Ni—Zn ferrite, the single-phase modified Ni—Zn ferrite including elements Ni, Zn, Co, Fe, and O, and having a spinel crystal structure and magnetic Q of greater than 100.22. The material of wherein the single-phase modified Ni—Zn ferrite has a composition NiCoZnFeO.23. The material of wherein the single-phase modified Ni—Zn ferrite has a permeability of 54.24. The material of wherein the base Ni—Zn ferrite has the formula NiZnFeO.25. The material of wherein the single-phase modified Ni—Zn ferrite is configured for use in the 13.56 MHz ISM band.26. The material of wherein the single-phase modified Ni—Zn ferrite is configured for use in the 27 MHz ISM band.27. The material of wherein the single-phase modified Ni—Zn ferrite further includes Mn.28. A radiofrequency device selected from the group consisting of radio-frequency identification tags claim 21 , biomedical sensors claim 21 , and radiofrequency antennas including the radiofrequency material of .29. A radiofrequency antenna claim 21 , the antenna being formed from a nickel zinc ferrite comprising:a single-phase modified Ni—Zn ferrite, the single-phase modified Ni—Zn ...

MODIFIED Z-TYPE HEXAGONAL FERRITE MATERIALS WITH ENHANCED RESONANT FREQUENCY

Disclosed herein are embodiments of modified z-type hexagonal ferrite materials having improved properties that are advantageous for radiofrequency applications, in particular high frequency ranges for antennas and other devices. Atomic substitution of strontium, aluminum, potassium, and trivalent ions can be used to replace certain atoms in the ferrite crystal structure to improve loss factor at high frequencies. 1. A high resonant-frequency material composition comprising:{'sub': 3-x', 'x', '2', '24-y', 'y', '41, 'an enhanced z-type hexagonal ferrite having some barium atoms substituted for strontium atoms and some iron atoms substituted for aluminum atoms, the enhanced z-type hexagonal ferrite having a formula BaSrCoFeAlOand having a resonant frequency of over about 500 MHz.'}2. The high resonant-frequency material of wherein 0 Подробнее

ADAPTIVE SOLID-STATE LUMINESCENT PHOSPHORS

The absorbance or emission wavelength of composite materials comprising a transition metal doped shell disposed over a rare earth doped core and a functionalizable group on the surface of the transition metal doped shell can change upon subjection to a carboxylic acid. This method of changing the absorbance or emission wavelength of a composite material can be used to identify counterfeit currency using an ink comprising a composite material. 1. A composite material comprising:a rare earth doped core;a transition metal doped shell disposed over the core; anda functionalizable group on the surface of the transition metal doped shell.2. The composite material of claim 1 , wherein the composite material forms a shape selected from the group consisting of a core-shell nanoparticle claim 1 , a nanowire claim 1 , a nanorod claim 1 , and a thin film disposed over a substrate.3. The composite material of claim 1 , wherein the composite material is a core-shell nanoparticle.4. The composite material of claim 1 , wherein the rare earth doped core comprises β-NaYF.5. The composite material of claim 1 , wherein the rare earth doped core comprises at least one rare earth selected from the group consisting of Er claim 1 , Yb claim 1 , Tb claim 1 , Tm claim 1 , and Ho.6. The composite material of claim 1 , wherein the transition metal doped shell comprises TiO.7. The composite material of claim 1 , wherein the transition metal doped shell comprises at least one transition metal selected from the group consisting of V claim 1 , Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , and Bi.8. The composite material of claim 1 , wherein the transition metal doped shell comprises Ni.9. The composite material of claim 1 , wherein the functionalizable group is a hydroxide group.10. The composite material of claim 1 , wherein the transition metal doped shell comprises Bi.11. The composite material of claim 1 , wherein at least one of the rare earth doped core and ...

COMPOSITION AND SHAPING OF A CERAMIC MATERIAL WITH LOW THERMAL EXPANSION COEFFICIENT AND HIGH RESISTANCE TO THERMAL SHOCK

The present invention is a composition and shaping of a ceramic material comprising at least one frit and at least one inorganic raw material. Some of the advantages are that said material requires a heat treatment no higher than 1180° C., that the duration of said heat treatment does not exceed 60 minutes, that the thermal expansion coefficient after the heat treatment is less than 25×10° C.in the temperature range 25° C. to 500° C. and that the material exhibits a high resistance to thermal shock, withstanding at least 10 consecutive thermal shock cycles between 600° C. and 25° C. without forming cracks or structural changes. The ceramic material composition is shaped by uniaxial pressing, band pressing, pour moulding, extrusion, injection moulding or lamination. 1. A composition of ceramic material for shaping , comprising:{'sup': −7', '−1', '−7', '−1, 'at least one frit in a percentage by weight comprised between 15% and 45% with a thermal expansion coefficient between 18×10° C.and 50×10° C.in the temperature range comprised between 25° C. and 500° C., and'}at least one inorganic raw material in a percentage by weight comprised between 55% and 85%.2. The composition according to claim 1 , wherein the inorganic raw material comprises spodumene in a percentage by weight between 55% and 85%.3. The composition according to claim 1 , wherein the percentage by weight of the frit is comprised between 15% and 35%.4. The composition according to claim 1 , comprising at least one ceramic pigment with a D100 particle size of up to 5 micrometres and in a percentage by weight comprised between 0% and 10%.5. An atomised particle for uniaxial pressing characterised in that it comprises:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a composition of ceramic material according to ,'}milling additives,shaping additives for shaping by uniaxial pressing,a D100 grain size distribution comprised between 100 micrometres and 600 micrometres.6. A method for obtaining an atomised ...

CERAMIC-CERAMIC COMPOSITES AND PROCESS THEREFOR, NUCLEAR FUELS FORMED THEREBY, AND NUCLEAR REACTOR SYSTEMS AND PROCESSES OPERATED THEREWITH

A process of producing ceramic-ceramic composites, including but not limited to nuclear fuels, and composites capable of exhibiting increased thermal conductivities. The process includes milling a first ceramic material to produce a powder of spheroidized particles of the first ceramic material, and then co-milling particles of a second ceramic material with the spheroidized particles of the first ceramic material to cause the particles of the second ceramic material to form a coating on the spheroidized particles of the first material. The spheroidized particles coated with the particles of the second ceramic material are then compacted and sintered to form the ceramic-ceramic composite, in which the second ceramic material forms a continuous phase completely surrounding the spheroidized particles of the first ceramic material. 1. A process of producing a ceramic-ceramic composite , the process comprising:milling a first ceramic material to produce a powder of spheroidized particles of the first ceramic material;co-milling particles of a second ceramic material with the spheroidized particles of the first ceramic material to cause the particles of the second ceramic material to form a coating on the spheroidized particles of the first material; and thencompacting and sintering the spheroidized particles coated with the particles of the second ceramic material to form the ceramic-ceramic composite in which the second ceramic material forms a continuous phase completely surrounding the spheroidized particles of the first ceramic material.2. The process according to claim 1 , wherein the first ceramic material is self-milled during the milling step.3. The process according to claim 1 , wherein the particles of the second ceramic material and the spheroidized particles of the first ceramic material are self-milled together during the milling step.4. The process according to claim 1 , wherein the first ceramic material is uranium dioxide.5. The process according to ...

ELECTROACTIVE MATERIALS FOR METAL-ION BATTERIES

This invention relates to particulate electroactive materials consisting of a plurality of composite particles, wherein the composite particles comprise a plurality of silicon nanoparticles dispersed within a conductive carbon matrix. The particulate material comprises 40 to 65 wt % silicon, at least 6 wt % and less than 20% oxygen, and has a weight ratio of the total amount of oxygen and nitrogen to silicon in the range of from 0.1 to 0.45 and a weight ratio of carbon to silicon in the range of from 0.1 to 1. The particulate electroactive materials are useful as an active component of an anode in a metal ion battery. 1. A method for preparing a particulate material consisting of a plurality of composite particles that comprise a plurality of silicon nanoparticles dispersed within a conductive pyrolytic carbon matrix , the method comprising the steps of:{'sub': '50', '(a) milling a silicon starting material in the presence of a non-aqueous solvent to obtain a dispersion of silicon-containing nanoparticles having a Dparticle diameter in the range of 30 to 500 nm in the solvent;'}(b) contacting the dispersion of silicon nanoparticles in the solvent with a pyrolytic carbon precursor selected from one or more compounds comprising at least one oxygen or nitrogen atom;(c) removing the solvent to provide silicon nanoparticles coated with the pyrolytic carbon precursor;(d) optionally heating the coated silicon nanoparticles to a temperature of from 200 to 400° C. for a period of from 5 minutes to 10 hours before step (e); and(e) pyrolysing the coated silicon nanoparticles at a pyrolysis temperature in the range of from 600 to 1200° C. to form said plurality of composite particles that comprise a plurality of silicon nanoparticles dispersed within a conductive pyrolytic carbon matrix.2. A method according to any of claim 1 , wherein the pyrolytic carbon precursor is selected from one or more aromatic or aliphatic carbon-containing compounds comprising at least one oxygen or ...

SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SAID SILICON NITRIDE POWDER

A silicon nitride powder having a specific surface area of 4.0 to 9.0 m/g, a β phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 μm and 1.5 to 3.0 μm, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 μm)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 μm)) is 0.5 to 1.5, and a ratio D50/D(μm/μm) of a median diameter D50 (μm) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter D(μm) calculated from the specific surface area is 3.5 or more. 110-. (canceled)11. A silicon nitride powder having a specific surface area of 4.0 to 9.0 m/g , a β phase proportion of less than 40 mass % , and an oxygen content of 0.20 to 0.95 mass % , wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks , peak tops of said peaks are present respectively in a range of 0.4 to 0.7 μm and in a range of 1.5 to 3.0 μm , a ratio of frequencies of said peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 μm)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 μm)) is 0.5 to 1.5 , and a ratio D50/D(μm/μm) of a median diameter D50 (μm) determined by said measurement of particle size distribution to a specific surface area-equivalent diameter D(μm) calculated from said specific surface area is 3.5 or more.12. The silicon nitride powder according to claim 11 , wherein a ratio ΔDp/D50 calculated by dividing a difference ΔDp (μm) between the particle diameter (μm) at the peak top in the particle diameter range of 1.5 to 3.0 μm and the particle diameter (μm) at the peak ...

GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME

The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cmto less than 5.0 g/cmand an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained. 1. A metal gallium-impregnated gallium nitride molded article , wherein a gallium nitride phase having voids contained therein and', 'a metal gallium phase, 'the molded article comprises'}which exist as separate phases, andthe molded article has a molar ratio of Ga/(Ga+N) of 55% to 80%.2. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein not less than 30% of a total volume of said voids contained therein is filled with said metal gallium.3. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article has density of 3.20 g/cmto less than 6.05 g/cm.4. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article has resistance of not higher than 1 Ω·cm.5. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article contains oxygen in an amount of not more than 11 atm %.6. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein said gallium nitride phase has density of 2.5 g/cmto less than 5.0 g/cmand a composition having an intensity ratio of a gallium ...

CERAMIC COMPOSITIONS COMPRISING ALUMINA

A composition may be suitable for firing to obtain a ceramic material therefrom. A green body or ceramic material may be formed from the composition. Ballistic armour may be formed from the composition or may include the ceramic material. 131-. (canceled)32. A composition suitable for firing to form a ceramic material therefrom , said composition comprising:{'sub': '50', 'from about 1 to about 40 wt. % based on the total dry weight of the composition of a first particulate material having a Mohs hardness of at least about 8.5 and a dof from about 7 μm to about 500 μm;'}at least about 50 wt. % based on the total dry weight of the composition of a second particulate material comprising alumina; andfrom 0 to about 10 wt. % based on the total dry weight of the composition of a sintering aid.33. The composition according to claim 32 , wherein the first particulate material is selected from fused corundum claim 32 , zirconia claim 32 , silicon carbide claim 32 , boron carbide claim 32 , tungsten carbide claim 32 , titanium carbide claim 32 , boron nitride claim 32 , diamond claim 32 , and combinations thereof.34. The composition according to claim 32 , wherein the first particulate material is fused corundum having a dof from about 7 μm to about 500 μm claim 32 , and the second particulate material is calcined alumina particulate other than fused corundum.35. The composition according to claim 32 , comprising at least about 50 wt. % calcined alumina other than fused corundum and up to about 40 wt. % fused corundum.36. The composition according to claim 32 , wherein the second particulate material has a dof from about 1 to about 20 μm.37. The composition according to claim 32 , wherein the second particulate material has a dof from about 2 to about 10 μm.38. The composition according to claim 32 , wherein the first particulate material has a dof 250 μm or less.39. The composition according to claim 32 , wherein the first particulate material has an angular and/or pointed ...

SILICON NITRIDE SINTERED BODY, METHOD FOR PRODUCING SAME, MULTILAYER BODY AND POWER MODULE

Provided is a method for producing a silicon nitride sintered body including: a step of molding and firing a raw material powder containing silicon nitride, in which an α-conversion rate of the silicon nitride contained in the raw material powder is less than or equal to 30 mass %. A thermal conductivity (at 20° C.) of the silicon nitride sintered body exceeds 100 W/m·K and a fracture toughness (K) is greater than or equal to 7.4 MPa·m. 1. A method for producing a silicon nitride sintered body , the method comprising:a step of molding and firing a raw material powder containing silicon nitride,wherein an α-conversion rate of the silicon nitride contained in the raw material powder is less than or equal to 30 mass %.2. The method for producing the silicon nitride sintered body according to claim 1 ,{'sub': 'IC', 'sup': '1/2', 'wherein the silicon nitride sintered body has a thermal conductivity (at 20° C.) of greater than 100 W/m·K and a fracture toughness (K) of greater than or equal to 7.4 MPa·m.'}3. The method for producing the silicon nitride sintered body according to claim 1 ,wherein a transverse strength of the silicon nitride sintered body exceeds 600 MPa.4. A silicon nitride sintered body claim 1 ,{'sub': 'IC', 'sup': '1/2', 'wherein a thermal conductivity (at 20° C.) exceeds 100 W/m·K and a fracture toughness (K) is greater than or equal to 7.4 MPa·m.'}5. The silicon nitride sintered body according to claim 4 ,wherein a transverse strength exceeds 600 MPa.6. The silicon nitride sintered body according to claim 4 ,wherein the thermal conductivity at 150° C. to 200° C. exceeds 60 W/m·K.7. A multilayer body comprising:a metal layer made of a first metal;a heat dissipation portion made of a second metal having a thermal conductivity higher than that of the first metal; and{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, 'a substrate which is provided between the metal layer and the heat dissipation portion and made of the silicon nitride sintered body ...

SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

A silicon nitride substrate includes silicon nitride and magnesium, in which when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the specific Condition I, XB/XA is 0.8 or more and 1.0 or less. 1. A silicon nitride substrate comprising silicon nitride and magnesium ,wherein when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the following Condition I, XB/XA is 0.80 or more and 1.00 or less,(Condition I)an amount of magnesium (% by mass, in terms of oxide) at an intersection A of diagonals on any one surface of the silicon nitride substrate is defined as XA (%), the amount of magnesium obtained by analyzing the intersection A with the X-ray fluorescence spectrometer, and an arithmetic mean value of amounts of magnesium (% by mass, in terms of oxide) at four points of B1, B2, B3, and B4 which are on the diagonals and positioned 3 mm inward from corners of the silicon nitride substrate to a direction of the intersection A is defined as XB (%), the arithmetic mean value of the amounts of magnesium obtained by analyzing the four points B1, B2, B3, and B4 with the X-ray fluorescence spectrometer.2. The silicon nitride substrate according to claim 1 ,wherein when the surface of the silicon nitride substrate is analyzed with the X-ray fluorescence spectrometer under the following Condition II, YA/YB is 0.90 or more and 1.00 or less,(Condition II)an amount of yttrium (% by mass, in terms of oxide) at an intersection A of diagonals on any one surface of the silicon nitride substrate is defined as YA (%), the amount of yttrium obtained by analyzing the intersection A with the X-ray fluorescence spectrometer, and, an arithmetic mean value of amounts of yttrium (% by mass, in terms of oxide) at four points of B1, B2, B3, and B4 which are on the diagonals and positioned 3 mm inward from corners of the silicon nitride substrate to a direction of the intersection A is defined ...

METHODS OF SINTERING DENSE ZETA-PHASE TANTALUM CARBIDE

A method of forming a sintered ζ-phase tantalum carbide can include assembling a particulate mixture including a tantalum hydride powder and a carbon source powder. The particulate mixture can be sintered to form a tantalum carbide having at least 70 wt. % of a ζ-phase with at least about 90% densification. After sintering, the tantalum carbide can be cooled to substantially retain the ζ-phase. 1. A method of forming a sintered ζ-phase tantalum carbide , comprising:assembling a particulate mixture including a tantalum hydride powder and a carbon source powder;sintering the particulate mixture to form a tantalum carbide having at least 70 wt. % of a ζ-phase with at least about 90% densification, wherein the sintering is performed at a pressure of from about 0.01 atm to about 10 atm; andcooling the tantalum carbide to substantially retain the ζ-phase.2. The method of claim 1 , wherein the carbon source powder is γ-TaC powder.3. The method of claim 1 , wherein the tantalum hydride powder is prepared by hydrogenation of a tantalum metal powder.4. The method of claim 1 , wherein the tantalum hydride powder has an average particle size of 2-20 μm.5. The method of claim 1 , wherein the tantalum hydride powder has an average particle aspect ratio from about 1 to about 1.3.6. The method of claim 1 , wherein the particulate mixture is prepared by planetary milling.7. The method of claim 1 , wherein the particulate mixture has a C/Ta mole ratio of about 0.64 to about 0.68.8. The method of claim 1 , wherein the particulate mixture has a C/Ta mole ratio of about 0.66.9. The method of claim 1 , further comprising annealing the particulate mixture at a temperature from 900° C. to 1300° C. before sintering.10. The method of claim 1 , wherein the sintering is performed at a pressure of from about 0.9 atm to 1.5 atm.11. The method of claim 1 , wherein the sintering is performed at a pressure of from about 0.01 atm to about 3 atm.12. The method of claim 1 , wherein the sintering is ...

Whisker reinforced high fracture toughness ceramic threaded fasteners

A high temperature fastener including a bolt and a nut, where the bolt and the nut are constructed of an aluminum oxide ceramic material reinforced with silicon-carbide crystal whiskers or silicon nitride.

METHOD FOR PARTICLE SURFACE TREATMENT OF A CERAMIC POWDER AND CERAMIC POWDER PARTICLES OBTAINED BY SAID METHOD

The invention concerns a method for surface treatment of a ceramic material in powder form, wherein said method comprising the step of providing a powder formed of a plurality of particles of the ceramic material to be treated, and wherein said ceramic powder particles are subjected to an ion implantation process by directing towards an external surface of said particles a beam of singly or multiply charged ions produced by a charge of singly or multiply charged ions, for example of the electron cyclotron resonance ECR type, wherein said particles have a generally polyhedral shape. 1. A method for surface treatment of a ceramic material in powder form , the method comprising:providing a powder formed of a plurality of particles of the ceramic material to be treated; andsubjecting said ceramic powder particles to an ion implantation process by directing towards an external surface of said particles a beam of singly or multiply charged ions produced by a source of singly or multiply charged ions.2. The method according to claim 1 , wherein the ceramic powder particles are agitated throughout the entire duration of the ion implantation process.3. The method according to claim 1 , wherein the grain size of the particles of ceramic powder used is such that substantially 50% of all the particles have a dimension smaller than 2 micrometres.4. The method according to claim 2 , wherein the grain size of the particles of ceramic powder used is such that substantially 50% of all the particles have a dimension smaller than 2 micrometres.5. The method according to claim 3 , wherein the dimension of the ceramic powder particles used is comprised between 1.2 micrometres and 63 micrometres.6. The method according to claim 4 , wherein the dimension of the ceramic powder particles used is comprised between 1.2 micrometres and 63 micrometres.7. The method according to claim 1 , wherein the ceramic material is a carbide claim 1 , a nitride claim 1 , a boride or an oxide.8. The method ...

Si3N4 INSULATOR MATERIAL FOR CORONA DISCHARGE IGNITER SYSTEMS

A silicon nitride material is disclosed which has properties beneficial for efficient operation of a corona discharge igniter system in an internal combustion gas engine. 1. A ceramic insulator material comprising a silicon nitride ceramic comprising β-SiNor β-SiAlON grains and a barium-aluminum silicate phase surrounding the grains , wherein the ceramic insulator material has a dielectric strength of greater than 10 KV/mm , a modulus of rupture strength of at least 500 MPa , a dielectric constant of less than 8.3 , a dielectric loss tangent less than 0.003 at 1 MHz , a fracture toughness of at least 5.5 MPa·m , a thermal expansion coefficient of less than 4×101/° C. , and a porosity level less than 0.06%.2. The ceramic insulator material of claim 1 , further comprising:49-56 wt % silicon;34-38 wt % nitrogen;2-7 wt % aluminum;1-5 wt % at least one rare earth element;0-0.3 wt % at least one of magnesium, calcium, and barium;0.01-1 wt % transition metal;3-6 wt % oxygen; and0.3-1.5 wt % carbon.3. The ceramic insulator material of in an internal combustion engine.4. The ceramic insulator material of that is produced by at least one process of the group consisting of pressureless sintering claim 1 , gas pressure sintering and hot isostatic pressing of parts formed from silicon nitride powder and sintering aids claim 1 , said parts formed by at least one of the following:a) dry pressing;b) isopressing;c) injection molding;d) casting;followed by binder burnout and sintering at temperatures from 1700° C. to 2000° C. in a nitrogen atmosphere.5. The ceramic insulator material of in which the nitriding step is conducted in a continuous furnace.6. A method comprising:mixing silicon with an oxide of at least one of Al, Mg, Ba, Sr, Si, Y, Er, La, and Ce to form a powder mixture;molding the powder mixture to form a ceramic insulator material part;nitriding the ceramic insulator material part; andsintering the ceramic insulator material part; 34-49 wt % silicon;', '19-31 wt % ...

ULTRA-HIGH DIELECTRIC CONSTANT GARNET

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas. 1. (canceled)2. An ultra-high dielectric constant garnet comprising:an yttrium iron garnet crystal structure with at least some yttrium being substituted out for bismuth, at least some yttrium being substituted by gadolinium, lanthanum, praseodymium, neodymium, samarium, dysprosium, ytterbium, or holmium, and charge balance achieved by calcium or zirconium substituting for at least some yttrium.3. The ultra-high dielectric constant garnet of wherein the ultra-high dielectric constant garnet has a dielectric constant of at least 40.4. The ultra-high dielectric constant garnet of wherein the ultra-high dielectric constant garnet does not contain sillenite.5. The ultra-high dielectric constant garnet of further including hafnium or titanium incorporated into octahedral sites of the yttrium iron garnet crystal structure.6. The ultra-high dielectric constant garnet of wherein the ultra-high dielectric constant garnet contains no yttrium.7. The ultra-high dielectric constant garnet of wherein the ultra-high dielectric constant garnet has a magnetization of 1600 4πMor above.8. The ultra-high dielectric constant garnet of wherein at least some yttrium is substituted by gadolinium.9. A method of producing an ultra-high dielectric constant garnet claim 2 , the method comprising:providing an yttrium iron garnet structure;substituting out at least some yttrium for bismuth;substituting out at least some yttrium for gadolinium, lanthanum, praseodymium, neodymium, samarium, dysprosium, ytterbium, or holmium; andcharge balancing by ...

Solid composition

A solid composition contains a first material and a powder and satisfies requirements 1 and 2. Requirement 1: |dA(T)/dT| satisfies 10 ppm/° C. or more at least at −200° C. to 1,200° C. A is (an a-axis lattice constant of a crystal in the powder)/(a c-axis lattice constant of a crystal in the powder), obtained from X-ray diffractometry of the powder. Requirement 2: C is 0.04 or more. C is (a log differential pore volume when a pore diameter of the solid composition is B in a pore distribution curve of the solid composition)/(a log differential pore volume corresponding to a maximum peak intensity in the pore distribution curve of the solid composition). B is (a pore diameter giving a maximum peak intensity in the pore distribution curve of the solid composition)/2. The pore distribution curve of the solid composition shows a relationship between the pore diameter and the log differential pore volume.

Sintered Polycrystalline Cubic Boron Nitride Material

Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder,and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material. 1. A method of making a polycrystalline cubic boron nitride , PCBN , material , the method comprising:providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm;providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 μm;intimately mixing the matrix precursor powder and the cBN powder; andsintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.2. The method of making a polycrystalline cubic boron nitride claim 1 , PCBN claim 1 , material according to claim 1 , further comprising providing a matrix precursor powder comprising particles having an average particle size no greater than 100 nm.3. The method of making a PCBN material according to claim 1 , wherein the step of intimately mixing the matrix powder and the cBN powder comprises:dispersing the matrix precursor powder and the cBN powder in a solvent;mixing the solvent, matrix precursor powder and cBN powder using an ultrasonic mixer; andremoving the solvent to leave an intimately mixed powder of matrix precursor particles and cBN particles.4. The method of making a PCBN material according to claim 1 , wherein the step of ...

REFRACTORY METAL SILICIDE NANOPARTICLE CERAMICS

Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder 1. A composition comprising: nanoparticles or particles of a refractory metal; and', 'a refractory-metal compound capable of decomposing into refractory-metal nanoparticles;, 'a metal component selected fromelemental silicon; and an organic compound having a char yield of at least 60% by weight; and', 'a thermoset made from the organic compound., 'an organic component selected from2. The composition of claim 1 , wherein the refractory metal is titanium claim 1 , zirconium claim 1 , hafnium claim 1 , molybdenum claim 1 , tungsten claim 1 , niobium claim 1 , tantalum claim 1 , or vanadium.3. The composition of claim 1 , wherein the metal component is a salt claim 1 , a hydride claim 1 , a carbonyl compound claim 1 , a halide claim 1 , or particles of the refractory metal.4. The composition of claim 1 , wherein the organic compound:contains only carbon and hydrogen;contains aromatic and acetylene groups;contains only carbon, hydrogen, and nitrogen;contains no oxygen; orcontains a heteroatom other than oxygen.5. The composition of claim 1 , wherein the organic compound is 1 claim 1 ,2 claim 1 ,4 claim 1 ,5-tetrakis(phenylethynyl)benzene or a prepolymer thereof.6. The composition of claim 1 , wherein the composition is milled.7. A method comprising:combining particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight to ...

Silicon nitride-based sintered body and cutting insert

A silicon nitride-based sintered body containing silicon nitride-based grains, which are formed of sialon grains. In the silicon nitride-based sintered body, when the size of each silicon nitride-based grain is represented by its maximum grain size, the ratio of the number of silicon nitride-based grains having a maximum grain size of 1 μm or less to the number of the entire silicon nitride-based grains is 70% or higher. Furthermore, in the distribution profile of no. % of silicon nitride-based grains with respect to maximum grain size, the maximum value of no. % (i.e., maximum no. %) of silicon nitride-based grains is 15 no. % or higher. Also disclosed is a cutting insert, which is formed of the silicon nitride-based sintered body.

METHOD FOR MANUFACTURING ZIRCONIA BLOCK FOR DENTAL PROSTHESIS HAVING LAYERED COLOR GRADIENT BY WATER ABSORPTION RATE

The present invention relates to a method for manufacturing a zirconia block for a dental prosthesis having a layered color gradient by a water absorption rate, in which the permeation degree of a coloring solution is controlled by setting a different particle size of powder for each layer of the zirconia block on the basis of the property that the amount of water absorption per hour is differentiated according to the particle size of powder, and as a result, the zirconia block is constituted so as to realize an esthetically excellent resultant product with the same color as natural teeth without carrying out the existing coloring liquid process for zirconia. 1. A method for manufacturing a zirconia block for a dental prosthesis having a layered color gradient by a water absorption rate , the method comprising:1) a main raw material separation step of preparing a main raw material by pulverizing zirconia at different particle sizes and dividing the zirconia at each particle size;2) a sub raw material mixing step of introducing and mixing a sub raw material whose water absorption rate is controlled at each main raw material having a different particle size;3) a raw material pressurization step of injecting the main raw material mixed with the sub raw material into a mold for compression molding in an order of particle size, and then compression molding the main raw material in the form of a block;4) a raw material implantation step of inducing a coloring solution to permeate into the zirconia block by putting the zirconia block molded in step 3) into a tank containing the coloring solution and then applying heat to the tank; and5) a heat treatment finishing step of drying the zirconia block into which the coloring solution in step 4) penetrates, and then calcining the zirconia block with heat at room temperature.2. The method of claim 1 , wherein 1) the main raw material separation step pulverizes the zirconia into a particle size each differentiated within a range ...

Method for Producing Inorganic Fiber-Bonded Ceramic Material

Provided is a method for producing an inorganic fiber-bonded ceramic material, which can produce, at a high yield, an inorganic fiber-bonded ceramic material with fewer defects, and with an end part and a central part equivalent to each other in microstructure and mechanical properties, and also makes it possible to increase the ceramic material in size. The method for producing an inorganic fiber-bonded ceramic material is characterized in that it includes: a first pressing step of setting, in a carbon die, a laminate to be surrounded by a ceramic powder, the laminate obtained by stacking a coated inorganic fiber shaped product including an inorganic fiber part of inorganic fibers that have a pyrolysis initiation temperature of 1900° C. or lower, and a surface layer of an inorganic substance for bonding the inorganic fibers to each other, and pressing the laminate at a temperature of 1000 to 1800° C. and a pressure of 5 to 50 MPa in an inert gas atmosphere; and a second pressing step of pressing a ceramic coated laminate obtained in the first pressing step at a temperature of 1600 to 1900° C., which is higher than that in the first pressing step, and at a pressure of 5 to 100 MPa in an inert gas atmosphere.

STRUCTURE AND CIRCUIT BOARD

A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element. 1. A structure comprising:a first crystal grain including silicon nitride;a second crystal grain including a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen; anda first region including an oxide of the first element.2. The structure according to claim 1 , whereinthe second crystal grain is provided in the first crystal grain.3. The structure according to claim 1 , whereina plurality of the first crystal grains are provided, andthe first crystal grains are provided around the second crystal grain.4. The structure according to claim 1 , whereina plurality of the first crystal grains and a plurality of the second crystal grains are provided,part of the first crystal grains are provided around one of the second crystal grains, andanother one of the second crystal grains is provided in another one of the first crystal grains.5. The structure according to claim 1 , whereinthe second crystal grain is positioned between ...

SYNTHESIS OF EFFECTIVE CARBON NANOREINFORCEMENTS FOR STRUCTURAL APPLICATIONS

A methodology is disclosed to produce nanostructured carbon particles that act as effective reinforcements. The process is conducted in the solid state at close to ambient conditions. The carbon nanostructures produced under this discovery are nanostructured and are synthesized by mechanical means at standard conditions. The benefit of this processing methodology is that those carbon nanostructures can be used as effective reinforcements for composites of various matrices. As example, are to demonstrate its effectiveness the following matrices were including in testing: ceramic, metallic, and polymeric (organic and inorganic), as well as bio-polymers. The reinforcements have been introduced in those matrices at room and elevated temperatures. The raw material is carbon soot that is a byproduct and hence abundant and cheaper than pristine carbon alternatives (e.g. nanotubes, graphene). 1. A method of synthesizing carbon nano-reinforcement material , the method comprising:a. obtaining fullerene soot with less than 10% by weight of fullerene; andb. subjecting the soot to mechanical milling for between 0.5 and 50 hours to obtained a milled product; andc. combining the milled product with at least one liquid polymer matrix to form a complex and hardening the complex to form a reinforced structure; andwherein the elongation at break of the polymer structure reinforced with soot is at least 40% greater than a hardened polymer structure that has not been reinforced with soot.2. The method of claim 1 , wherein the milled product does not include nanodiamonds.3. The method of claim 1 , wherein the milled product includes nano-diamonds.4. The method of claim 1 , wherein the milled product comprises graphitic carbon.5. The method of claim 1 , wherein the milled product comprises less than 15% by weight of sp3 bonded carbon species after milling.6. The method of claim 1 , wherein the milled product comprises less than 20% by weight of sp3 bonded carbon species after milling.7. ...

BORON ALUMINUM SILICATE MINERAL MATERIAL, LOW TEMPERATURE CO-FIRED CERAMIC COMPOSITE MATERIAL, LOW TEMPERATURE CO-FIRED CERAMIC, COMPOSITE SUBSTRATE AND PREPARATION METHODS THEREOF

The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of BO, and 53.47%-67.17% of SiO. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates. 3. A low temperature co-fired ceramic composite material claim 1 , wherein the low temperature co-fired ceramic composite material comprises claim 1 , in mass percentage claim 1 , 35% to 65% of AlOand 35% to 65% of the boroaluminosilicate mineral material according to .4. The low temperature co-fired ceramic composite material according to claim 1 , wherein the low temperature co-fired ceramic composite material comprises 41.69% to 62.53% of AlOand 37.47% to 58.31% of the boroaluminosilicate mineral material according to .5. A method for preparing a boroaluminosilicate mineral material claim 1 , wherein it comprises the following steps:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'weighing a sodium source, a potassium source, a calcium source, an aluminum source, a boron source, and a silicon source according to a ratio of elements of the boroaluminosilicate mineral material according to ; mixing and grinding to obtain a boroaluminosilicate mineral grinding slurry;'}subjecting the boroaluminosilicate mineral grinding slurry ...

Ceramic Material and Thermal Switch

A ceramic material has a characteristic length Lof a micro-structure thereof that satisfies 0.1 L≦L≦100 L, and has thermal conductivity that monotonously increases from room temperature to 100° C., where Ldenotes apparent mean free path of phonons at room temperature, and is defined as L=(3×thermal conductivity)/(heat capacity×speed of sound). The characteristic length Lof the micro-structure is an interval between particles of different type of material when the ceramic material includes a composite material in which the different type of material is dispersed in a base material, is an interval between one pore and another pore when the ceramic material includes a porous body, and is the crystalline particle size (interval between one grain boundary and another grain boundary) when the ceramic material includes a polycrystalline body. 1. A ceramic material , having a characteristic length Lof a micro-structure thereof that satisfies 0.1 L≦L≦100 L , and having thermal conductivity that monotonously increases from room temperature to 100° C. , where Ldenotes apparent mean free path of phonons at room temperature , and is defined as L=(3×thermal conductivity)/(heat capacity×speed of sound).2. The ceramic material according to claim 1 , wherein thermal conductivity thereof at 100° C. is 1.5 times or more of thermal conductivity at room temperature.3. The ceramic material according to claim 1 , wherein thermal conductivity thereof at 200° C. is 2 times or more of thermal conductivity at room temperature.4. The ceramic material according to claim 1 , wherein the ceramic material includes a composite material in which a different type of material is dispersed in a base material claim 1 , and an interval GI between one particle of the different type of material and another particle of the different type of material is the characteristic length Lof the micro-structure.5. The ceramic material according to claim 4 , wherein let that the average of the intervals GI between one ...

SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT

The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-SiNcrystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability. 1. A silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-SiNcrystal grains as a main component , 2 to 4% by mass of a rare earth element in terms of oxide , 2 to 6% by mass of Al in terms of oxide , and 0.1 to 5% by mass of Hf in terms of oxide ,wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less.2. The silicon nitride wear resistant member according to claim 1 , wherein when the silicon nitride sintered compact is subjected to XRD analysis claim 1 , intensity I1 of a peak at 30.0±0.5° based on the rare earth-Hf—O compound crystals and intensity I2 of a peak at 27.1±0.5° and intensity I3 of a peak at 33.7±0.5° based on the β-SiNcrystals satisfy I1/[(I2+I3)/2]=0.1 to 0.2.3. The silicon nitride wear resistant member according to claim 1 , wherein an average particle size of the rare earth-Hf—O compound crystals is 1 μm ...

CERAMIC SINTERED BODY AND PASSIVE COMPONENT INCLUDING THE SAME

The present disclosure provides a ceramic sintered body having a favorable dielectric constant. In some embodiments of the present disclosure, the ceramic sintered body includes a semiconductor ceramic phase dispersed in a dielectric ceramic phase, wherein the semiconductor ceramic phase and the dielectric ceramic phase jointly form a percolative composite, and a volume fraction of the semiconductor ceramic phase is close to and less than a percolation threshold. 1. A ceramic sintered body comprising a semiconductor ceramic phase dispersed in a dielectric ceramic phase , wherein the semiconductor ceramic phase and the dielectric ceramic phase jointly form a percolative composite , and a volume fraction of the semiconductor ceramic phase is close to and less than a percolation threshold.2. The ceramic sintered body of claim 1 , wherein the volume fraction of the semiconductor ceramic phase is about 0.05% to about 20% less than the percolation threshold.3. The ceramic sintered body of claim 1 , wherein the volume fraction of the semiconductor ceramic phase is about 0.999 times to about 0.33 times the percolation threshold.4. The ceramic sintered body of claim 1 , wherein the material of the dielectric ceramic phase is selected from a group consisting of CaZrTiO(zirconolite) claim 1 , CaZrO claim 1 , SrZrO claim 1 , BaZrO claim 1 , TiO(rutile) claim 1 , ZrO claim 1 , and solid solutions thereof.5. The ceramic sintered body of claim 1 , wherein the material of the semiconductor ceramic phase is selected from a group consisting of perovskite materials and reduced TiO(rutile).6. The ceramic sintered body of claim 5 , wherein the perovskite materials are selected from a group consisting of strontium titanate (SrTiO) claim 5 , barium titanate (BaTiO) claim 5 , calcium titanate (CaTiO) claim 5 , nickel titanate (NiTiO) claim 5 , manganese titanate (MnTiO) claim 5 , cobalt titanate (CoTiO) claim 5 , copper titanate (CuTiO) claim 5 , magnesium titanate (MgTiO) and complexes ...

APPARATUS AND METHOD FOR IMPROVING ADHESIVE STRENGTH OF DENTAL RESTORATION

A method and apparatus for producing a dental restoration with enhanced adhesive or bonding strength are disclosed. The dental restoration comprises a zirconia based crown and a porcelain layer built-up on a top surface of the zirconia based crown. The zirconia based crown is to be bonded to a top of an abutment toothand has dimensions that are smaller than outer dimensions of the abutment tooth. A first surface of the zirconia based crown is configured to adhere to the abutment toothand a second surface of the zirconia based crown is configured to receive the porcelain layer built-up. The first surface and the second surface of the zirconia based crown are treated with a surface treatment solution which includes at least nitric acid (HNO), hydrofluoric acid (HF) and hydrogen peroxide (HO). Further, the zirconia based crown may be treated with an ultrasonic impact treatment in addition to the surface treatment of the zirconia based crown. 1. A method of producing a dental restoration including a zirconia crown and one or more porcelain layers on a top surface of the zirconia crown , the method comprising:milling a zirconia block into a shape of a zirconia crown having dimensions that are smaller than outer dimensions of an abutment tooth;sintering the molded zirconia block to obtain the zirconia crown including a first surface and a second surface, the first surface being configured to adhere to a top of the abutment toothand the second surface being configured to adhere to the one or more porcelain layers;{'sub': 3', '2', '2, 'preparing and placing in a first container a surface treatment solution including at least nitric acid (HNO), hydrofluoric acid (HF) and hydrogen peroxide (HO);'}placing the zirconia crown in a second container configured to be disposed inside the first container;placing inside the first container the second container with the zirconia crown disposed in the second container so that the first surface and the second surface of the zirconia ...

SILICON NITRIDE SINTERED BODY AND HIGH-TEMPERATURE-RESISTANT MEMBER USING THE SAME

The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm. Additionally, it is preferable that the silicon nitride sintered body includes 15% by mass or less of the grain boundary phase. According to the above-described configuration, it is possible to provide a high-temperature-resistant silicon nitride sintered body in which degradation of the grain boundary phase under high temperature environment is suppressed. This silicon nitride sintered body is suitable for constituent material of a high-temperature-resistant member, use environment of which is 300° C. or higher. 110.-. (canceled)11. A silicon nitride sintered body comprising silicon nitride crystal grains and a grain boundary phase , wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase between two of the silicon nitride crystal grains , which is the shortest (closest) distance between two of the silicon nitride crystal grains , is 0.2 nm to 5 nm , an area proportion (%) (area ratio %) of the silicon nitride crystal grains each having an aspect ratio of 2 or more per a unit area of 50 μm×50 μm is 60% or more , and a crystal compound is interposed at the grain boundary phase.12. The silicon nitride sintered body according to claim 11 , wherein the silicon nitride sintered body includes a grain boundary phase as an additive component in a content of 15% by mass or less.13. The silicon nitride sintered body according to claim 11 , wherein the silicon nitride sintered body includes three or more elements selected from Y claim 11 , Al claim 11 , Mg claim 11 , Si claim 11 , Ti claim 11 , Hf claim 11 , Mo claim 11 , and C.14. The silicon nitride sintered ...