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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 7279. Отображено 100.
29-03-2012 дата публикации

Polishing liquid composition

Номер: US20120077422A1
Автор: Taiki Yoshino
Принадлежит: Kao Corp

A polishing liquid composition that makes it possible to provide a polished substrate surface on which scratches and/or waviness are reduced, without impairing productivity, is provided, and further, a method for manufacturing and polishing a substrate using this polishing liquid composition is provided. The polishing liquid composition contains an abrasive, a water-soluble polymer, and water, wherein the water-soluble polymer has a sulfonic acid group, and has an aromatic ring in each of a main chain and a side chain. The method for manufacturing a substrate, and the method for polishing a substrate, include performing polishing by supplying the above-described polishing liquid composition to a surface to be polished of a substrate to be polished, bringing a polishing pad into contact with the surface to be polished, and moving the polishing pad and/or the substrate to be polished.

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Номер записи: 1
19-04-2012 дата публикации

Heterocoagulate, and compositions and method for polishing and surface treatment

Номер: US20120094578A1
Автор: Abigail R. Farning, Harry W. Sarkas, Patrick G. Murray
Принадлежит: Individual

A heterocoagulate comprises first particles, having a particle size of at most 999 nm, on a second particle, having a particle size of at least 3 microns. The first particles comprise cerium oxide, and second particle comprises at least one member selected from the group consisting of silicon oxides, aluminum oxides and zirconium oxides.

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Номер записи: 2
14-06-2012 дата публикации

Soil resistant floor treatment

Номер: US20120145188A1
Автор: Andrew S. Wold, Catherine Hanson, Kim R. Smith, Mark D. Levitt, Minyu Li
Принадлежит: ECOLAB USA INC

A soil resistant floor surface treatment composition is provided. In particular, a composition comprises a maleic/olefin copolymer and an optional cleaning agent. Methods for treating a porous floor surface with a soil resistant agent and kits comprising a floor treatment composition, an applicator, a removal agent for removing a plurality of soils from a treated surface, and instructions for use are further provided by the present invention.

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Номер записи: 3
19-07-2012 дата публикации

Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same

Номер: US20120181249A1
Автор: Hiroshi Matsunaga, Kenji Yamada, Masaru Ohto
Принадлежит: Mitsubishi Gas Chemical Co Inc

There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

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Номер записи: 4
26-07-2012 дата публикации

Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same

Номер: US20120187333A1
Автор: Chang Bum Ko, Gi Ra Yi, Jong Pil Kim, Jung Hee Lee, Kwang Ik Moon, Seung Beom Cho, Soon Ho Jang, Young Jun Hong
Принадлежит: LG Chem Ltd

Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

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Номер записи: 5
26-07-2012 дата публикации

Abrasive Free Silicon Chemical Mechanical Planarization

Номер: US20120190200A1
Автор: Naresh K. PENTA, Suryadevara V. Babu
Принадлежит: CLARKSON UNIVERSITY

A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.

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Номер записи: 6
20-09-2012 дата публикации

Methods for etch of sin films

Номер: US20120238102A1
Автор: Anchuan Wang, Jingchun Zhang, Nitin Ingle
Принадлежит: Applied Materials Inc

A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

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Номер записи: 7
11-10-2012 дата публикации

Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate

Номер: US20120258598A1
Автор: Guangyun Zhang, Kancharla-Arun Kumar Reddy, Yi Guo, Zhendong Liu
Принадлежит: Rohm and Haas Electronic Materials CMP Holdings Inc

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R 8 is independently selected from hydrogen, a saturated or unsaturated C 1-15 alkyl group, C 6-15 aryl group, C 6-15 aralkyl group, C 6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

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Номер записи: 8
28-03-2013 дата публикации

Slurry for chemical-mechanical polishing of metals and use thereof

Номер: US20130078811A1
Автор: Eric J. White, Eva A. Shah, Graham M. Bates, Jason P. Ritter, Joseph K. Comeau, Matthew T. Tiersch, Michael T. Brigham
Принадлежит: International Business Machines Corp

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

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Номер записи: 9
02-05-2013 дата публикации

Dry Etching Agent and Dry Etching Method

Номер: US20130105728A1
Автор: Hibino Yasuo, KIKUCHI Akiou, Mori Isamu, OKAMOTO Satoru, Umezaki Tomonori
Принадлежит: CENTRAL GLASS COMPANY, LIMITED

A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H, O, O, CO, CO, COCl, COF, CFOF, NO, F, NF, Cl, Br, I, CH, CH, CH, CH, CH, CH, CH, HF, HI, HBr, HCl, NO, NHand YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation. 1. A dry etching agent comprising 1 ,3 ,3 ,3-tetrafluoropropene , an additive gas and an inert gas.2. The dry etching agent according to claim 1 , wherein the additive gas is an oxidizing gas or reducing gas.3. The dry etching agent according to claim 2 , wherein the oxidizing gas or reducing gas is at least one kind of gas selected from the group consisting of H claim 2 , O claim 2 , O claim 2 , CO claim 2 , CO claim 2 , COCl claim 2 , COF claim 2 , CFOF claim 2 , NO claim 2 , F claim 2 , NF claim 2 , Cl claim 2 , Br claim 2 , I claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , CH claim 2 , HF claim 2 , HI claim 2 , HBr claim 2 , HCl claim 2 , NO claim 2 , NHand YFn (where Y represents Cl claim 2 , Br or I; and n represents an integer satisfying 1≦n≦7).4. The dry etching agent according to claim 1 , wherein the inert gas is at least one kind of gas selected from the group consisting of N claim 1 , He claim 1 , Ar claim 1 , Ne and Kr.5. The dry etching agent according to claim 1 , wherein the 1 claim 1 ,3 claim 1 ,3 claim 1 ,3-tetrafluoropropene is contained in an amount of 1 to 45 volume %.6. The dry etching agent according to claim 1 , further comprising at least one kind of gas selected from the group consisting of CF claim 1 , CFH claim 1 , CFH claim 1 , CFH claim 1 ...

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Номер записи: 10
09-05-2013 дата публикации

Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same

Номер: US20130112914A1
Автор: Choong-Ho Han, Jae-dong Lee, Jin-Woo Bae, Joon-Sang Park, Kyoung-Moon Kang, Sang-kyun Kim, Won-Jun Lee, Ye-Hwan Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

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Номер записи: 11
16-05-2013 дата публикации

Methods For Processing Abrasive Slurry

Номер: US20130118091A1
Автор: Erk Henry F., Tanna Vandan
Принадлежит: MEMC ELECTRONIC MATERIALS, INC.

Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry. 1. A method for recovering abrasive grain from slurry , the method comprising the steps of:diluting the slurry with a first amount of a solvent in a tank, wherein the slurry includes at least a liquid suspension medium and the abrasive grain;vibrating the slurry and the first amount of the solvent;removing substantially all of a first remaining liquid suspension after at least half of the abrasive grain has settled to a bottom portion of the tank;adding a second amount of solvent to the tank and the settled abrasive grain contained therein;vibrating the slurry and the second amount of the solvent; andremoving substantially all of a second remaining liquid suspension after at least half of the abrasive grain has settled to the bottom portion of the tank.2. The method of wherein the first amount of solvent includes at least one of naphtha or d-limonene.3. The method of wherein the second amount of solvent includes at least one of water and a composition including water and a surfactant.4. The method of further comprising heating the settled abrasive grain after substantially all of the second remaining liquid suspension has been removed.5. The method of wherein the slurry is oil-based.6. The method of wherein the tank is substantially closed.7. The method of wherein vibrating the slurry and the first amount of the solvent comprises rotating an eccentric ...

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Номер записи: 12
16-05-2013 дата публикации

METHOD AND COMPOSITIONS FOR PRODUCING OPTICALLY CLEAR PHOTOCATALYTIC COATINGS

Номер: US20130119305A1
Автор: FOVERSKOV Morten, Iversen Steen Brummerstedt, Jensen Henrik, Mateiu Ramona
Принадлежит: Photocat A/S

The invention relates to a method and compositions for producing a hydrophilic coating on a surface of a solid material. The method comprises a cleaning step and a coating step. The cleaning step may be preceded by an initial cleaning step and it may optionally be succeded by a preconditioning step prior to the coating step. The cleaning step comprises cleaning and preconditioning a surface of a material by use of a first cleaning fluid composition comprising ceria (CeO) particles. The coating step comprises treatment by use of a coating fluid composition comprising photocatalytically active nanoparticles of titania (TiO). An advantage of the method of the invention is that the method may be carried out at temperatures in the range 5 to 50° C. No further heating is required. Thereby, the method may easily be used for treating materials such as windows, furniture, tiles, walls, etc. 1{'sub': 2', '2', '2, 'ceria (CeO) particles suspended in water, wherein said ceria (CeO2) particles have a primary particle size below 30 nm, wherein the average particle size of said ceria (CeO) particles in suspension is below 500 nm, wherein the concentration of said ceria (CeO) particles in said cleaning fluid composition are in the range 0.3-20.0 w/w %, wherein said cleaning fluid composition has a zeta potential above 30 mV, the pH value of said cleaning fluid composition is in the range 2-6, wherein said cleaning fluid composition further comprises a buffer to maintain said cleaning composition in a specific pH range, and wherein said buffer comprises acetic acid, citric acid, or nitric acid.'}. A cleaning fluid composition comprising at least one component resulting in a chemical mechanical polishing, the cleaning fluid composition, comprising: This application is a continuation of U.S. patent application Ser. No. 12/191,995, filed Aug. 14, 2008, which claims the benefit of priority to Danish Patent Application No. PA 2007 01161, filed Aug. 14, 2007, both of which are hereby ...

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Номер записи: 13
23-05-2013 дата публикации

INTERSECTING PLATE SHAPED ABRASIVE PARTICLES

Номер: US20130125477A1
Автор: Adefris Negus B.
Принадлежит: 3M INNOVATIVE PROPERTIES COMPANY

Shaped abrasive particles comprising a ceramic and comprising a first plate integrally joined to a second plate at a predetermined angleβ. 1. Shaped abrasive particles comprising a ceramic and comprising a first plate integrally joined to a second plate at a predetermined angle β.2. The shaped abrasive particles of wherein the first plate or the second plate comprises a first major surface and a second major surface connected by at least one sidewall.3. The shaped abrasive particles of wherein a draft angle α between the second major surface and the at least one sidewall is between approximately 90 degrees to approximately 135 degrees.4. The shaped abrasive particles of wherein the draft angle α between the second major surface and the sidewall is between approximately 95 degrees to approximately 120 degrees.5. The shaped abrasive particles of wherein the first plate comprises a truncated triangular pyramid and the second plate comprises a truncated triangular pyramid.6. The shaped abrasive particles of wherein the first plate comprises a triangular prism and the second plate comprises a triangular prism.7. The shaped abrasive particles of wherein the first plate comprises a rhombus prism and the second plate comprises a triangular prism.8. The shaped abrasive particles of wherein the first plate comprises a truncated rhombus pyramid and the second plate comprises a truncated triangular pyramid.98. The shaped abrasive particles of claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , or wherein the predetermined angle β is about 90 degrees.108. The shaped abrasive particles of claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , claim 1 , or wherein the predetermined angle β is between about 20 degrees to about 85 degrees.11. The shaped abrasive particles of claim 1 , wherein the shaped abrasive particles comprise alpha alumina and are formed by molding a boehmite alumina sol gel.12. An abrasive article comprising the shaped abrasive particles ...

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Номер записи: 14
23-05-2013 дата публикации

SYNTHETIC QUARTZ GLASS SUBSTRATE POLISHING SLURRY AND MANUFACTURE OF SYNTHETIC QUARTZ GLASS SUBSTRATE USING THE SAME

Номер: US20130130596A1
Автор: Harada Daijitsu, Matsui Harunobu, Takeuchi Masaki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

In polishing of synthetic quartz glass substrates, a polishing slurry is used comprising (i) an oligopeptide comprising recurring units of pentapeptide: -[valine-proline-glycine-valine-glycine]- and having a molecular weight of 800-150,000 or a copolymer of the pentapeptide with another monomer, and (ii) a colloidal solution. 1. A polishing slurry for synthetic quartz glass substrates , comprising(i) an oligopeptide comprising recurring units of pentapeptide: -[valine-proline-glycine-valine-glycine]- and having a molecular weight of 800 to 150,000 or a copolymer of the pentapeptide with another monomer copolymerizable therewith, and(ii) a colloidal solution.2. The polishing slurry of wherein component (i) comprises 2 to 20 recurring units of pentapeptide.3. The polishing slurry of wherein the colloidal solution is a colloidal silica water dispersion.4. The polishing slurry of claim 1 , having pH 8 to 11.5. The polishing slurry of claim 1 , further comprising at least one member selected from the group consisting of alkali metal hydroxides claim 1 , alkaline earth metal hydroxides claim 1 , basic salts claim 1 , organic amines claim 1 , ammonia and ammonium salts.6. A method of manufacturing a synthetic quartz glass substrate through rough polishing and final polishing claim 1 , wherein the final polishing step uses the polishing slurry of .7. The method of wherein the polishing slurry of is kept at a temperature below the phase transition temperature of said oligopeptide or copolymer and then fed to the final polishing step so that said oligopeptide or copolymer may absorb the polishing heat of the final polishing step. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2011-252633 filed in Japan on Nov. 18, 2011, the entire contents of which are hereby incorporated by reference.This invention relates to a polishing slurry for use in polishing of synthetic quartz glass substrates useful as the microelectronic material ...

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Номер записи: 15
06-06-2013 дата публикации

METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID

Номер: US20130140485A1
Автор: AKIMOTO Hirotaka, IWANO Tomohiro, MINAMI Hisataka
Принадлежит:

In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element. 115-. (canceled)17. The production method according to claim 16 , wherein the ΔpH is not greater than 5.00.18. The production method according to claim 16 , wherein the cycle count N is 1.00 minor greater.19. The production method according to claim 16 , wherein the substitution count M is not greater than 1.0 min.20. The production method according to claim 16 , wherein a base of the alkali solution is a nitrogen-containing heterocyclic organic base.21. The production method according to claim 16 , wherein the mixing rate v is not greater than 1.00×10m/min.22. The production method according to claim 16 , wherein the temperature T is not higher than 60° C.23. The production method according to claim 16 , wherein a concentration of the salt of a tetravalent metal element is the first liquid is 0.01 mol/L or greater.24. The production method according to claim 16 , wherein an alkaline concentration of the second liquid is not greater than 15.0 mol/L.25. The production method according to claim 16 , wherein a pH of the liquid mixture is 2.0 to 7.0.26. The production method according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.27. A production method for a slurry claim 16 , wherein abrasive grains obtained by the production method according to are mixed with water to obtain a slurry.28. A production method for a polishing liquid claim 27 , wherein a slurry obtained by the production method according to is mixed with an additive to obtain a polishing liquid.29. A production method for a polishing liquid claim 16 , wherein abrasive grains obtained by the production method according to claim 16 , an additive and water are mixed ...

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Номер записи: 16
20-06-2013 дата публикации

METHOD FOR RECOVERY OF CERIUM OXIDE

Номер: US20130152483A1
Автор: Harada Daijitsu, Matsui Harunobu, Takeuchi Masaki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A method for recovery of cerium oxide from the abrasive waste composed mainly of cerium oxide arising from the polishing of glass substrates, said method including the steps of (i) adding to the abrasive waste an aqueous solution of a basic substance; (ii) adding to the resulting solution a precipitant, thereby forming precipitates composed mainly of cerium oxide, and removing the supernatant liquid; (iii) adding to the resulting precipitates a solution of an acid substance, thereby making said precipitate slightly acid to neutral; (iv) washing the precipitates with an organic solvent; and (v) drying and crushing the precipitates. 1. A method for recovery of cerium oxide from the abrasive waste composed mainly of cerium oxide which arises from the polishing of glass substrates , said method comprising the steps of:(i) adding to the abrasive waste an aqueous solution of a basic substance;(ii) adding to the resulting solution a precipitant, thereby forming precipitates composed mainly of cerium oxide, and removing the supernatant liquid;(iii) adding to the resulting precipitates a solution of an acid substance, thereby making said precipitate slightly acid to neutral;(iv) washing the resulting precipitates with an organic solvent; and(v) drying and crushing the precipitates.2. The method for recovery of cerium oxide of claim 1 , wherein the aqueous solution of a basic substance is that of sodium hydroxide having at least pH 12.3. The method for recovery of cerium oxide of claim 1 , wherein the precipitant is one selected from aluminum sulfate and polyaluminum chloride.4. The method for recovery of cerium oxide of claim 1 , wherein the acid substance is one selected from acetic acid claim 1 , carbonic acid claim 1 , dilute nitric acid claim 1 , and dilute hydrochloric acid.5. The method for recovery of cerium oxide of claim 1 , wherein the organic solvent is methanol. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. ...

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Номер записи: 17
04-07-2013 дата публикации

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS

Номер: US20130168348A1
Автор: Chiu Wei Lan William, Chu Jea-Ju, Li Yuzhuo, Pinder Harvey Wayne, Venkataraman Shyam Sundar
Принадлежит: BASF SE

An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition. 119-. (canceled)20. An aqueous polishing composition comprising:an abrasive particle comprising ceria;at least one water-soluble polymer selected from the group comprising a linear or branched alkylene oxide homopolymer and a linear or branched alkylene oxide copolymer; andan anionic phosphate dispersing agent,wherein the aqueous polishing composition comprises the at least one water-soluble polymer in an of from 0.001 to 5% by weight based on a total weight of the aqueous polishing composition andwherein the abrasive particle is positively charged, when dispersed in an aqueous medium which is free from the anionic phosphate dispersing agent and has a pH value of from 3 to 9, as evidenced by an electrohoretic mobility measurement.21. The aqueous polishing composition according to claim 20 , wherein the abrasive particle consists of ceria.22. The aqueous polishing composition according to claim 20 , comprising the abrasive particle in an amount of from 0.005 to 10% by weight based on the total weight of the aqueous polishing composition.23. The aqueous polishing composition according to claim 20 , wherein the at least one water-soluble polymer comprises at least one homopolymer or copolymer of ethylene oxide or propylene oxide.24. The aqueous polishing composition according to claim 20 , wherein the at least one ...

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Номер записи: 18
11-07-2013 дата публикации

POLISHING SLURRY AND CHEMICAL MECHANICAL PLANARIZATION METHOD USING THE SAME

Номер: US20130178064A1
Автор: LEE Dong Hyeon, LEE Yang Bok, LIM Dae Soon, SHIN Dong Hee, YANG Il Ho
Принадлежит:

A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including a bond of silicon (Si) and oxygen (O). 1. A polishing slurry for planarizing a thin film containing two or more different kinds of metal or metalloid elements , the polishing slurry comprising:polishing particles; andnanoscale particles of polyhedral structure having a smaller size than the polishing particles, each of the nanoscale particles including at least one silicon (Si) atom bonded to an oxygen (O) atom.2. The polishing slurry of claim 1 , wherein the polishing particles includes alumina (AlO) claim 1 , ceria (CeO) claim 1 , zirconia (ZrO) claim 1 , titania (TiO) claim 1 , germania (GeO) claim 1 , chromium oxide (CrO) claim 1 , manganese oxide (MnO) claim 1 , silica (SiO) or a combination thereof.3. The polishing slurry of claim 1 , wherein the polishing particles have an average size of about 10 nm to about 150 nm.4. The polishing slurry of claim 1 , wherein the polishing particles have an average size of about 10 nm to about 100 nm.5. The polishing slurry of claim 1 , wherein the nanoscale particles of polyhedral structure include a polyhedral oligomeric silsesquioxane (POSS) compound.6. The polishing slurry of claim 1 , wherein the POSS compound includes a compound having a formula (RSiO)(R′SiO)(XSiO) claim 1 , wherein R and R′ are organic substituents claim 1 , X is a functional group claim 1 , each of m claim 1 , n claim 1 , and l is an integer equal to or greater than 0 (zero) claim 1 , and m+n+l≧6.7. The polishing slurry of claim 6 , wherein the organic substituents includes hydrogen claim 6 , an acid claim 6 , an alcohol-based functional group claim 6 , a carboxyl-based functional group claim 6 , an ester-based functional group claim 6 , an ether-based functional group claim 6 , an amine-based functional group claim 6 , a thiol-based functional group claim 6 ...

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Номер записи: 19
18-07-2013 дата публикации

SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME

Номер: US20130181159A1
Автор: Imao Tomohiro, Morinaga Hitoshi, TAKAHASHI Shuhei, Tsuchiya Kohsuke, Yasufuku Noboru
Принадлежит:

A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass. 1. A surface treatment composition comprising a first surfactant , a second surfactant , a basic compound , and water , the surface treatment composition having a pH of 8 or more ,wherein the second surfactant has a weight-average molecular weight ½ times or less that of the first surfactant, and the sum of a content of the first surfactant and a content of the second surfactant is 0.00001 to 0.1% by mass.2. The surface treatment composition according to claim 1 , wherein a ratio of a total number of carbon atoms of the second surfactant to a sum of a total number of carbon atoms of the first surfactant and the total number of carbon atoms of the second surfactant is 1 to 90%.3. The surface treatment composition according to claim 1 , wherein the first surfactant has a weight-average molecular weight of 500 to 20 claim 1 ,000.4. The surface treatment composition according to claim 1 , wherein both the first surfactant and the second surfactant are nonionic surfactants.5. The surface treatment composition according to claim 1 , further comprising a particle component.6. The surface treatment composition according to claim 5 , wherein the particle component is silicon dioxide.7. The surface treatment composition according to claim 1 , further comprising a wetting agent.8. The surface treatment composition according to claim 1 , wherein the surface treatment composition is used in an application of subjecting a silicon wafer to surface treatment.9. The surface treatment composition according to claim 1 , wherein the surface treatment composition is used in an ...

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Номер записи: 20
18-07-2013 дата публикации

Composition for polishing and composition for rinsing

Номер: US20130183826A1
Автор: Kohsuke Tsuchiya, Shuhei Takahashi
Принадлежит: Fujimi Inc

A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.

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Номер записи: 21
25-07-2013 дата публикации

ABRASIVE PARTICLES HAVING PARTICULAR SHAPES AND METHODS OF FORMING SUCH PARTICLES

Номер: US20130186006A1
Автор: Czerepinski Jennifer H., Kavanaugh Michael D., Yener Doruk O.
Принадлежит:

A method of forming an abrasive article includes depositing a mixture into an opening of a substrate, contacting an exposed surface of the mixture in the opening to a texturing form to form a textured preform, and removing the mixture from the opening and forming an abrasive particle having a textured surface. 1. An abrasive article comprising:an abrasive particle comprising a body having a first surface, the first surface comprising a liquid management texture.2. The abrasive article of claim 1 , wherein the liquid management texture comprises protruding features.3. The abrasive article of claim 2 , wherein protruding features are arranged in a pattern having long-range order extending across the entire surface first surface defining a major surface of the body.4. The abrasive article of claim 1 , wherein the liquid management texture comprises intersecting grooves.5. The abrasive article of claim 4 , wherein the intersecting grooves define a plurality of t-shaped grooves extending across at least a portion of the first surface.6. The abrasive article of claim 5 , wherein the t-shaped grooves comprise a longitudinal groove and a lateral groove intersecting the longitudinal groove claim 5 , and wherein the longitudinal groove has a length greater than a length of the lateral groove.7. The abrasive article of claim 6 , wherein the length of the lateral groove is not greater than about 90% of the length of the longitudinal groove.8. The abrasive article of claim 5 , wherein the lateral groove has a width greater than a width of the longitudinal groove.9. (canceled)10. The abrasive article of claim 1 , wherein the intersecting grooves extend to an edge of the first surface claim 1 , wherein the edge comprises irregular protrusions and grooves or an irregular serrated surface.1112-. (canceled)13. The abrasive article of claim 1 , wherein the liquid management texture comprises a double-recessed surface feature claim 1 , the double-recessed surface feature comprising a ...

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Номер записи: 22
08-08-2013 дата публикации

POLISHING COMPOSITION

Номер: US20130199106A1
Автор: Ashitaka Keiji, Morinaga Hitoshi, YASUI Akihito
Принадлежит:

A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm. 1. A polishing composition comprising colloidal silica particles each having a surface with a plurality of protrusions , wherein part of the colloidal silica particles has larger particle diameters than a volume average particle diameter of the colloidal silica particles , and wherein an average of values respectively obtained by dividing a height of a protrusion on a surface of each particle belonging to the part of the colloidal silica particles by a width of a base portion of the same protrusion is no less than 0.245.2. The polishing composition according to claim 1 , wherein the part of the colloidal silica particles that has larger particle diameter than a volume average particle diameters of the colloidal silica particles has an average aspect ratio of no less than 1.15.3. The polishing composition according to claim 1 , wherein the protrusions on surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than a volume average particle diameter of the colloidal silica ...

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Номер записи: 23
08-08-2013 дата публикации

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES

Номер: US20130200038A1
Автор: Chu Jea-Ju, Li Yuzhuo, Pinder Harvey Wayne, Usman Ibrahim Sheik Ansar, Venkataraman Shyam Sundar
Принадлежит: BASF SE

An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices. 119-. (canceled)20. An aqueous polishing composition having a pH of from 3 to 11 , the aqueous polishing composition comprising:abrasive particles;an anionic phosphate dispersing agent; andat least one polyhydric alcohol component selected from the group consisting of a polyhydric alcohol and a mixture,whereinthe abrasive particles are positively charged when dispersed in an aqueous medium which is free from the anionic phosphate dispersing agent and has a pH of from 3 to 9 as evidenced by an electrophoretic mobilitythe polyhydric alcohol is at least one selected from the group consisting of a water-soluble polyol, a water-dispersible polyol, an aliphatic polyol, a cycloaliphatic polyol, a monomeric polyol, a dimeric polyol, and an oligomeric polyol, each comprising at least 4 hydroxy groups that are not dissociable in the aqueous medium, and has an amount of from 0.005 to 5% by weight, based on a complete weight of the composition; and at least one ...

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Номер записи: 24
08-08-2013 дата публикации

Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts

Номер: US20130200039A1
Автор: Bastian Noller, Diana Franz, Harvey Wayne Pinder, Sheik Ansar Usman Ibrahim, Shyam Sundar Venkataraman, Yuzhuo Li
Принадлежит: BASF SE

An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N′-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

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Номер записи: 25
08-08-2013 дата публикации

TITANIUM NITRIDE REMOVAL

Номер: US20130200040A1
Автор: Chen Shyng-Tsong, Fitzsimmons John A., Peethala Brown C., Rath David L., Sankarapandian Muthumanickam, van der Straten Oscar
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present disclosure decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result. 1. A chemical composition for removing a metal hard mask and etching residues from a microelectronic device comprising:at least one metal protectant at a concentration in a range from 1,000 p.p.m. to 50,000 p.p.m. in weight percentage;an oxidizing agent selected from peroxides and oxidants which do not leave a residue and do not adversely attack copper;a pH stabilizer including at least one quaternary ammonium salt or at least one quaternary ammonium alkali; andan aqueous solution.2. The chemical composition of claim 1 , further comprising a sequestering agent selected from amines and amino acids.3. The chemical composition of claim 2 , wherein the sequestering agent is at least one of 1 claim 2 ,2-cyclohexanediamine-N claim 2 ,N claim 2 ,N′ claim 2 ,N′-tetraacetic acid (CDTA) claim 2 , ethyenediaminetetraacetic acid (EDTA) and diethylenetriaminopentaacetic acid (DTPA).4. The chemical composition of claim 1 , wherein the metal protectant is at least one of benzotriazole claim 1 , 1 claim 1 ,2 claim 1 ,3 triazole claim 1 , 1 claim 1 ,3 claim 1 ,4 triazole claim 1 , 1 claim 1 ,2 claim 1 ,4 triazole claim 1 , imidazole claim 1 , methyl-thiol-triazole claim 1 , thiol-triazole claim 1 , and triazole acid.5. The chemical composition of claim 1 , wherein the oxidizing agent comprises at least one of hydrogen peroxide (HO) and benzoyl peroxide (CHO).6. The ...

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Номер записи: 26
22-08-2013 дата публикации

Chemical Mechanical Polishing Composition And Methods Relating Thereto

Номер: US20130217230A1
Автор: Ghosh Tirthankar, Ibbitson Scott A., Thomas Terence M., WANG HONGYU
Принадлежит: Rohm and Haas Electronic Materials CMP Holdings, Inc.

A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer. 1. A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal , comprising: (a) providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; (b) providing a chemical mechanical polishing pad; (c) providing a semiconductor wafer containing the nonferrous metal; (d) creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer and (e) dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.2. The method of claim 1 , wherein the copolymer in the chemical mechanical polishing composition provided is a 9:1 to 1:9 (weight basis) copolymer of poly(ethylene glycol) methyl ether methacrylate and 1-vinylimidazole and has a weight average molecular weight of 5 claim 1 ,000 to 1 claim 1 ,000 claim 1 ,000.3. The method of claim 1 , wherein the chemical ...

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Номер записи: 27
12-09-2013 дата публикации

ABRASIVE PARTICLES HAVING COMPLEX SHAPES AND METHODS OF FORMING SAME

Номер: US20130236725A1
Автор: ARCONA Christopher, Bauer Ralph, Boussant-Roux Yves, Brandes Alan J., Czerepinski Jennifer H., Iyengar Sujatha, Kavanaugh Michael D., Panzarella Tracy H., Yener Doruk O.
Принадлежит:

An abrasive grain is disclosed and may include a body. The body may define a length (l), a height (h), and a width (w). In a particular aspect, the length is greater than or equal to the height and the height is greater than or equal to the width. Further, in a particular aspect, the body may include a primary aspect ratio defined by the ratio of length:height of at least about 2:1. The body may also include an upright orientation probability of at least about 50%. 117.-. (canceled)18. A shaped abrasive particle comprising:a body having a length (l), a width (w), and a height (h), wherein the body comprises a base surface end, an upper surface, and a side surface extending between the base surface and the upper surface, wherein the base surface comprises a different cross-sectional shape than a cross-sectional shape of the upper surface.1920.-. (canceled)21. The shaped abrasive particle of claim 18 , wherein the body comprises a three-pointed star having three arms extending from a central portion of the body claim 18 , and wherein at least one of the arms comprises a midpoint width that is less than a central portion width.2223.-. (canceled)24. The shaped abrasive particle of claim 21 , wherein the base surface defines a three-pointed star two-dimensional shape claim 21 , and wherein the upper surface comprises an arcuate three-pointed two-dimensional shape.2529.-. (canceled)30. The shaped abrasive particle of claim 21 , wherein the first side surface comprises a first section and a second section joined together at an interior angle claim 21 , wherein the interior angle defines an angle greater than about 90 degrees.3133.-. (canceled)34. The shaped abrasive particle of claim 18 , wherein the side surface comprises a fractured region intersecting at least a portion of an edge defining the base surface.3537.-. (canceled)38. The shaped abrasive particle of claim 21 , wherein at least one arm comprises a twist.39. The shaped abrasive particle of claim 21 , wherein the ...

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Номер записи: 28
19-09-2013 дата публикации

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Номер: US20130244431A1
Автор: Daisuke Ryuzaki, Takenori Narita, Tomohiro Iwano
Принадлежит: Individual

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

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Номер записи: 29
19-09-2013 дата публикации

AQUEOUS FLOOR POLISHING COMPOSITION

Номер: US20130245190A1
Автор: Harada Masashi, Yamazaki Yuji
Принадлежит: ADEKA CORPORATION

The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. Rand Rrepresent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. 2. The aqueous floor polishing composition described in claim 1 , wherein m is 2 in the above general formula (1).3. The aqueous floor polishing composition described in claim 1 , wherein n is a number from 4 to 20 in the above general formula (1).4. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare each independently alkyl groups having 2 to 14 carbon atoms in the above general formula (1).5. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare both 2-ethylhexyl groups in the above general formula (1).6. The aqueous floor polishing composition described in wherein the content of the above polyoxyalkylene diester compound is from 0.5 to 20 mass % relative to the total solid content. The present invention relates to an aqueous floor polishing composition, and further specifically, relates to the aqueous floor polishing composition which has excellent surface smoothing properties (hereafter, also called as leveling properties), lustering properties and abrasion resistance (hereafter, also called as heel mark resistance properties), but does not contain an elemental phosphorus-containing plasticizer and does not negatively affect the environment. In this regard, “aqueous” means a concept comprised of an emulsion type, a dispersion type, a suspension type and a water solution type which use water as a solvent.Conventionally, with the purpose of protecting the floor surface and improving the beauty of the same, a floor polishing agent (hereafter, also called as a floor polish) has been applied to the floor surface of buildings so that ...

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Номер записи: 30
03-10-2013 дата публикации

TRANSFER ASSISTED SCREEN PRINTING METHOD OF MAKING SHAPED ABRASIVE PARTICLES AND THE RESULTING SHAPED ABRASIVE PARTICLES

Номер: US20130255162A1
Автор: Boden John T., Erickson Dwight D., Welygan Dennis G.
Принадлежит:

Shaped ceramic articles can be obtained by screen printing the desired shapes from a dispersion of a precursor of the ceramic onto a receiving surface using a transfer assisted technique that applies a differential pressure, at least partially drying the screen printed shapes, and firing them to generate the shaped ceramic articles. Shaped abrasive particles made using lower viscosity sol gels that tended to flow or creep after the screen printing formation were found to have higher grinding performance over screen printed shaped abrasive particles made with higher viscosity sol gels. 1. A process for the production of shaped ceramic articles by a screen printing process which comprises applying a dispersion of a ceramic precursor to a receiving surface through a printing screen comprising a plurality of apertures , removing the printing screen from the receiving surface to form a plurality of screen printed shapes while applying a differential pressure between a first side of the screen printed shape and a second side of the screen printed shape that is in contact with the receiving surface , at least partially drying the screen printed shapes remaining on the receiving surface and firing the screen printed shapes to form sintered shaped ceramic articles.2. The process according to wherein the precursor is a chemical precursor.3. The process according to wherein the dispersion comprises an alpha alumina precursor.4. The process according to wherein the dispersion is a boehmite alumina sol gel.5. The process according to wherein the sol gel has a solids content of between about 30% to about 60%.6. The process according to wherein the sol gel has a maximum yield stress and the maximum yield stress is between about 60 claim 4 ,000 Pa·Sec to about 5 claim 4 ,000 Pa·Sec.7. The process according to wherein the sol gel maximum yield stress is between about 15 claim 5 ,000 Pa·Sec to about 5 claim 5 ,000 Pa·Sec.8. The process according to wherein the applying a differential ...

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Номер записи: 31
03-10-2013 дата публикации

Polishing liquid and method for polishing substrate using the polishing liquid

Номер: US20130260558A1
Автор: Munehiro Oota, Shigeru Yoshikawa, Takaaki Matsumoto, Takaaki Tanaka, Takahiro Yoshikawa, Takashi Shinoda, Toshio Takizawa
Принадлежит: Hitachi Chemical Co Ltd

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO 3 M group and —PO 3 M 2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

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Номер записи: 32
10-10-2013 дата публикации

VERY LOW PACKING DENSITY CERAMIC ABRASIVE GRITS AND METHODS OF PRODUCING AND USING THE SAME

Номер: US20130263524A1
Автор: Angelone Angelo R., Seider Robert
Принадлежит:

Producing and using very low packing density ceramic abrasive grits comprising various fused aluminum oxide materials with or without other oxide additives, fused aluminum oxide-zirconium oxide co-fusions with or without other oxide additives, or sintered sol gel aluminum oxide materials with or without other oxide additives where the ceramic abrasive grains are preferably made by crushing bubbles of the material. 130-. (canceled)31. A method for manufacturing a ceramic abrasive grain product comprising at least 50 percent by weight of particles having an average particle size of 500 to 1500 micrometers and an internal concave surface wall , an external convex surface wall and a thickness between the internal and external walls , said external wall being in the shape of a portion of an essentially spherical shape , essentially all of said particles of the ceramic abrasive grain product having a thickness less than twenty percent of the particle size dimensions of the ceramic abrasive grain product , said particles having irregular circumferential edges defined by circumferences of the internal and external walls comprising:a. forming ceramic bubbles having a diameter of between 800 and 4000 micrometers and a wall thickness of 0.002 to 0.15 inch and less than about ten percent of bubble diameter, andb. crushing the ceramic bubbles to form the product.32. The method of wherein from about 0.3 to about 0.7 weight percent of water insoluble ceramic material is added that melts at a temperature lower than the ceramic of the bubbles to reduce bubble wall thickness.33. The method of where the lower melting ceramic material is selected from the group consisting of silicon dioxide claim 32 , magnesium orthosilicate claim 32 , and aluminum silicate.34. The method of where the lower melting ceramic material is silicon dioxide.35. The method of wherein from about 0.1 to about 0.7 weight percent of oxides other than alumina and zirconia are present to cause weakened grain ...

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Номер записи: 33
31-10-2013 дата публикации

TiO2 BASED SCRUBBING GRANULES, AND METHODS OF MAKING AND USING SUCH TiO2 BASED SCRUBBING GRANULES

Номер: US20130283703A1
Автор: EREMCHUK Kit Stacey, FEHER Gabor, Fines Alexandre Jean, POMPONI Mark D., SAMA Venkata Ramana Reddy
Принадлежит: Cristal USA Inc.

TiObased scrubbing granules, and methods of making and using such TiObased scrubbing granules are described. TiO-based scrubbing granules include granulated TiOand about 0.5% to about 20% dry weight inorganic salt binder. Other TiObased scrubbing granules include unsintered granulated TiOand about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiObased scrubbing granules include i) combining TiOparticles with inorganic salt binder to form TiO-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO-binder mixture; and drying the granulated TiO-binder mixture to form TiO-based scrubbing granules. Methods of using such TiO-based scrubbing granules include introducing TiO-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiOparticles and finishing the formed TiOparticles into finished pigment products. 1. TiO-based scrubbing granules comprising:{'sub': '2', 'i. granulated TiO;'}{'sub': '2', 'ii. sodium aluminate binder comprising from about 0.5% to about 20% by dry weight of the TiO-based scrubbing granules.'}2. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules are dispersible in a TiOslurry during a process of making finished TiOpigment.3. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules are unsintered.4. TiO2-based scrubbing granules of claim 1 , further comprising an inorganic salt.5. TiO-based scrubbing granules of claim 1 , further comprising an inorganic metal salt selected from the group consisting of sodium sulfate claim 1 , sodium phosphate claim 1 , sodium silicate claim 1 , sodium chloride claim 1 , sodium hexametaphosphate claim 1 , aluminum sulfate claim 1 , and combinations thereof.6. TiO-based scrubbing granules of claim 1 , wherein the TiO-based scrubbing granules have an average size from about 1 ...

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Номер записи: 34
14-11-2013 дата публикации

POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD

Номер: US20130302984A1
Автор: Kubo Megumi, TAKAHASHI Shuhei, Tsuchiya Kohsuke
Принадлежит:

Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications. 1. A polishing composition comprising a composition (A) and at least one selected from an organic acid and an organic salt , whereinthe composition (A) contains hydroxyethyl cellulose, ammonia, abrasive grains, and water, andthe electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A).2. The polishing composition according to claim 1 , further comprising a surfactant.3. A method for polishing a substrate surface by using the polishing composition according to .4. A method for manufacturing a substrate claim 3 , comprising a step for polishing a substrate surface by using the method according to .5. A method for polishing a substrate surface by using the polishing composition according to .6. A method for manufacturing a substrate claim 5 , comprising a step for polishing a substrate surface by using the method according to . The present invention relates to a polishing composition for use in polishing a substrate, a method for polishing a substrate by using the polishing composition, and a method for producing a substrate.In semiconductor devices such as ULSIs (Ultra Large Scale Integrations) used in computers, movement to smaller design rules in order to realize higher integration and higher operation speed has been accelerated year by year. With this tendency, there are an increased number of cases where small defects on the surface of a substrate used in a semiconductor device have an adverse effect on the performance of the semiconductor device. Accordingly, overcoming nano- ...

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Номер записи: 35
21-11-2013 дата публикации

Fine Abrasive Particles and Process for Producing Same

Номер: US20130305618A1
Автор: Maezawa Akihiro, Nagai Yuuki, Takahashi Atsushi
Принадлежит:

Provided are fine abrasive particles which have a high rate of polishing and generate few polishing flaws. A process for producing then abrasive particles is also provided in which the fine abrasive particles have a reduced coefficient of fluctuation in particle diameter, the production steps are simple, and the production cost is low. The fine abrasive particles comprise cerium oxide, at least one element selected from La, Pr, Nd, Sm, and Eu, and one or more element selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and are characterized in that the cerium oxide has a Ce content of 20 mol % or higher and that the sum (mol %) of the content of the at least one element selected from La, Pr, Nd, Sm, Nd Eu and the content of Ce in the cerium oxide is greater than the sum (mol %) of the contents of the one or more elements selected from Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. 1. Fine abrasive particles comprising cerium oxide , at least one type of element selected from the group consisting of La , Pr , Nd , Sm and Eu , and at least one type of element selected from the group consisting of Y , Gd , Tb , Dy , Ho , Er , Tm , Yb and Lu , whereina content of Ce of the cerium oxide in the fine abrasive particles is 20 mol % or more;a sum of a content (mol %) of the at least one type of element selected from the group consisting of La, Pr, Nd, Sm and Eu in the fine abrasive particles and the content of Ce of the cerium oxide is larger than a sum of a content (mol %) of the at least one type of element selected from the group consisting of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in the fine abrasive particles; andthe fine abrasive particles are spherical.2. The fine abrasive particles of claim 1 , wherein the content of Ce of the cerium oxide ranges from 40 to 70 mol %.3. The fine abrasive particles of claim 1 , wherein the sum of the content (mol %) of the at least one type of element selected from the group consisting of Y claim 1 , Gd claim 1 , Tb claim 1 , Dy claim 1 , Ho ...

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Номер записи: 36
21-11-2013 дата публикации

CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID PREPARATION UNIT PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, AND SUBSTRATE PROCESSING SYSTEM

Номер: US20130306238A1
Автор: ISHIKAWA Hidekazu, MIURA Atsuyasu
Принадлежит: DAINIPPON SCREEN MFG. CO., LTD.

A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid. 1. A chemical liquid preparation method of preparing a chemical liquid for substrate processing , comprising:a step of supplying an oxygen-containing gas that contains oxygen gas to a TMAH-containing chemical liquid that contains TMAH (tetramethylammonium hydroxide) to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid.2. The chemical liquid preparation method of preparing a chemical liquid for substrate processing according to claim 1 , wherein the oxygen-containing gas is oxygen gas or cleaned dry air.3. The chemical liquid preparation method of preparing a chemical liquid for substrate processing according to claim 1 , comprising:a measurement step of measuring a dissolved oxygen concentration in the TMAH-containing chemical liquid;a nitrogen dissolution step of supplying a nitrogen-containing gas containing nitrogen gas to the TMAH-containing chemical liquid to make the nitrogen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is higher than a predetermined concentration; andan oxygen dissolution step of supplying the oxygen-containing gas to the TMAH-containing chemical liquid to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is lower than the predetermined concentration.4. A chemical liquid preparation unit preparing a chemical liquid ...

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Номер записи: 37
05-12-2013 дата публикации

Separating Fluid, Method And System For Separating Multilayer Systems

Номер: US20130319618A1
Автор: Kernbaum Sebastian, Seibt Horst
Принадлежит:

A separating fluid, method and use for separating multilayer systems, especially photovoltaic modules, for the purpose of recycling, which allow the separation of multilayer systems. Especially photovoltaic modules, in comparatively simple manner in terms of the processes used, in as environmentally friendly a manner as possible, at high recycling rates. For this purpose, the separating fluid is a nanoscale dispersion or a precursor thereof. 1. A separating fluid for separating multilayer systems , the separating fluid comprising a nanoscale dispersion , wherein the nanoscale dispersion comprises an organic component , an aqueous component and at least one surfactant , and wherein at least one of the surfactants is selected from the group consisting of anionic surfactants , non-ionic surfactants and amphoteric surfactants.2. A separating fluid according to claim 1 , wherein the aqueous component has a concentration of at least 60 percent by weight.3. A separating fluid according to claim 1 , wherein the at least one surfactant comprises at least one non-ionic surfactant and one or several surfactants from the group formed by anionic surfactants and amphoteric surfactants.4. The separating fluid according to claim 1 , wherein the non-ionic surfactant has a concentration in the area from 2 percent by weight to 12 percent by weight.5. The separating fluid according to claim 1 , wherein at least one of the anionic surfactant or the amphoteric surfactant has a concentration of no more than 10 percent by weight.6. The separating fluid according to wherein further comprising a hydrotrope for stabilization.7. The separating fluid of claim 1 , further comprising a co-surfactant selected from the group consisting of short-chain alcohols.8. The separating fluid according to claim 1 , further comprising a basic component.9. A method for separating multilayer systems comprising:washing the multilayer systems with a separating fluid comprising a nanoscale dispersion to form ...

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Номер записи: 38
19-12-2013 дата публикации

SHAPED ABRASIVE PARTICLES AND METHODS OF FORMING SAME

Номер: US20130337262A1
Автор: Barnes Martin, Bauer Ralph, Demers Rene G., Skowron Margaret L.
Принадлежит:

A method of forming a shaped abrasive particle includes applying a mixture into a shaping assembly within an application zone and directing an ejection material at the mixture in the shaping assembly under a predetermined force, removing the mixture from the shaping assembly and forming a precursor shaped abrasive particle. 1. A method comprising:applying a mixture into a shaping assembly within an application zone; anddirecting an ejection material at the mixture in the shaping assembly under a predetermined force, removing the mixture from the shaping assembly and forming a precursor shaped abrasive particle.2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. The method of claim 1 , wherein the mixture comprises a change in weight of less than about 5% for a total weight of the mixture for a duration the mixture is in an opening of the shaping assembly.28. (canceled)29. (canceled)30. (canceled)31. The method of claim 1 , wherein an average residence time of the mixture in an opening of the shaping assembly is less than about 18 minutes.32. (canceled)33. The method of claim 2 , wherein removing the mixture includes directing an ejection material at the mixture in the shaping assembly under a predetermined force of at least about 0.1 N.34. (canceled)35. (canceled)36. (canceled)37. (canceled)38. (canceled)39. (canceled)40. The method of claim 1 , wherein an opening in the shaping assembly comprises a two dimensional shape as viewed in a plane defined by the length and the width of the screen selected from the group consisting of polygons claim 1 , ellipsoids claim 1 , numerals claim 1 , Greek alphabet characters claim 1 , Latin alphabet characters claim 1 , Russian alphabet ...

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Номер записи: 39
02-01-2014 дата публикации

UNIQUE CUBIC BORON NITRIDE CRYSTALS AND METHOD OF MANUFACTURING THEM

Номер: US20140000177A1
Автор: ZHANG KAI
Принадлежит:

A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a core and an outgrown region. The core may have a single crystal structure. The outgrown region may also contain a single crystal. The single crystal may extend outwards from the core. The outgrown region may have a lower toughness index than that of the core. 1. A superabrasive material comprising:a core having a single crystal structure; andan outgrown region extending outwards from the core, wherein the outgrown region has a lower toughness index than that of the core.2. The superabrasive material of claim 1 , wherein the outgrown region comprises a material selected from a group of cubic boron nitride claim 1 , diamond and diamond composite materials.3. The superabrasive material of claim 1 , wherein the core comprises a material selected from a group of cubic boron nitride claim 1 , diamond and diamond composite materials.4. The superabrasive material of claim 1 , wherein the single crystal structure of the core has different chemical compositions as that of the outgrown region.5. The superabrasive material of claim 1 , wherein the single crystal structure of the core has same chemical composition as that of the outgrown region.6. The superabrasive material of claim 1 , wherein the single crystal structure of the core is substantially faceted.7. The superabrasive material of claim 1 , wherein the outgrown region are substantially deformed.8. The superabrasive material of claim 1 , wherein the outgrown region is blocky and rough.9. A method claim 1 , comprising:providing a plurality of hexagonal boron nitride (hBN) grains;providing a catalyst;subjecting the plurality of hBN grains and the catalyst to a first high pressure for a first time period sufficient to form a core having a single crystal structure; andsubjecting the plurality of hBN grains and the catalyst to a second high pressure for a second time period sufficient to form an ...

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Номер записи: 40
02-01-2014 дата публикации

METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD

Номер: US20140001145A1
Автор: Inaba Tadashi, KOYAMA Akiko, MIZUTANI Atsushi
Принадлежит: FUJIFILM Corporation

A method of forming a capacitor structure, which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination, with the pH adjusted to 11 or more, to a polycrystalline silicon film or an amorphous silicon film, removing a part or all of the polycrystalline silicon film or amorphous silicon film, and forming concave and convex shapes that constitute a capacitor. 1. A method of forming a capacitor structure , which comprises: applying a silicon etching liquid which contains an alkali compound and a hydroxylamine compound in combination , with the pH adjusted to 11 or more , to a polycrystalline silicon film or an amorphous silicon film , removing a part or all of the polycrystalline silicon film or amorphous silicon film , and forming concave and convex shapes that constitute a capacitor.2. The method according to claim 1 , wherein the area with the concave and convex shapes has a cylinder bore that is formed as a result of removal of the silicon film using the silicon etching liquid.3. The method according to claim 1 , further comprising a step of removing an oxide film formed on the silicon film before the silicon etching liquid is applied.4. The method according to claim 2 , wherein the area with the concave and convex shapes that constitute the capacitor structure includes TiN claim 2 , and the cylinder bore has an aspect ratio of 15 or more.5. The method according to claim 1 , wherein the concentration of the alkali compound is 3 to 25 mass %.6. The method according to claim 1 , wherein the concentration of the hydroxylamine compound is 0.1 to 15 mass %.7. The method as set forth in claim 1 , wherein the silicon etching liquid further contains alcohol compounds claim 1 , sulfoxide compounds or ether compounds.8. A silicon etching liquid for preparing a capacitor structure by removing a part or all of a polycrystalline silicon film or an amorphous silicon film to shape concave and convex shapes that ...

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Номер записи: 41
09-01-2014 дата публикации

ABRASIVE PARTICLES HAVING PARTICULAR SHAPES AND METHODS OF FORMING SUCH PARTICLES

Номер: US20140007518A1
Автор: Breder Kristin K., Czerepinski Jennifer H., Iyengar Sujatha, Kavanaugh Michael D., Marlin Samuel S., Yener Doruk O.
Принадлежит:

A shaped abrasive particle including a body having a length (l), a width (w), and a height (hi), wherein the height is at least about 28% of the width, and a percent flashing (f) of at least about 10% and not greater than about 45% for a total side area of the body. 1. A shaped abrasive particle comprising: a length (l), a width (w), and a height (hi), wherein the height (hi) is an interior height of the body and at least about 28% of the width; and', 'a percent flashing (f) of at least about 10% and not greater than about 45% for a total side area of the body., 'a body including2. (canceled)3. (canceled)4. The shaped abrasive particle of claim 1 , wherein the height (hi) is at least about 29% of the width.5. The shaped abrasive particle of claim 1 , wherein the height (hi) is at least about 33% of the width.6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. The shaped abrasive particle of claim 1 , wherein the percent flashing is at least about 12%.14. The shaped abrasive particle of claim 1 , wherein the percent flashing is and not greater than about 36%.15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. (canceled)21. (canceled)22. (canceled)23. (canceled)24. (canceled)25. (canceled)26. (canceled)27. The shaped abrasive particle of claim 1 , wherein the body comprises a shape selected from the group consisting of triangular claim 1 , quadrilateral claim 1 , rectangular claim 1 , trapezoidal claim 1 , pentagonal claim 1 , hexagonal claim 1 , heptagonal claim 1 , octagonal claim 1 , and a combination thereof.28. (canceled)29. (canceled)30. (canceled)31. The shaped abrasive particle of claim 1 , wherein the body comprises a bottom surface claim 1 , an upper surface claim 1 , a first side surface extending between the bottom surface and the upper surface claim 1 , and a second side surface extending between the bottom surface and the upper surface claim 1 , and wherein the first side surface and ...

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Номер записи: 42
16-01-2014 дата публикации

ETCHING LIQUID COMPOSITION FOR MULTILAYER CONTAINING COPPER AND MOLYBDENUM AND PROCESS FOR ETCHING THEREOF

Номер: US20140014615A1
Автор: Tamai Satoshi, Yube Kunio
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

There is provided an etching liquid composition for a multilayer film containing copper and molybdenum. The etching liquid composition comprises: (A) a peroxosulfate ion source; (B) a copper ion source; and (C) at least one nitrogen compound source selected from the group consisting of ammonia, ammonium ions, amines, and alkyl ammonium ions and has pH 3.5 to 9. 1. An etching liquid composition for a multilayer film containing copper and molybdenum , the liquid composition comprising:(A) a peroxosulfate ion source;(B) a copper ion source; and(C) at least one nitrogen compound source selected from the group consisting of ammonia, ammonium ions, amines, and alkyl ammonium ions,the liquid composition having pH 3.5 to 9.2. The liquid composition according to claim 1 , wherein the peroxosulfate ion source (A) is at least one compound selected from the group consisting of ammonium peroxodisulfate claim 1 , potassium peroxodisulfate claim 1 , sodium peroxodisulfate claim 1 , and potassium hydrogen peroxomonosulfate.3. The liquid composition according to claim 1 , wherein the mixing ratio of the peroxosulfate ion source (A) to the copper ion source (B) is 0.01 to 20 on a molar basis.4. The liquid composition according to claim 1 , wherein the copper ion source (B) is at least one compound selected from the group consisting of copper claim 1 , copper sulfate claim 1 , copper nitrate claim 1 , and copper acetate.5. The liquid composition according to claim 1 , wherein the nitrogen compound source (C) is at least one compound selected from the group consisting of ammonia claim 1 , ammonium sulfate claim 1 , ammonium nitrate claim 1 , ammonium acetate claim 1 , ammonium peroxodisulfate claim 1 , and tetramethylammonium hydroxide.6. The liquid composition according to claim 1 , wherein the mixing ratio of the nitrogen compound source (C) to the copper ion source (B) is 4 to 100 on a molar basis.7. The liquid composition according to claim 1 , which further comprises (D) a ...

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Номер записи: 43
30-01-2014 дата публикации

SURFACE CLEANING ARTICLE AND PROCESS FOR MAKING THE SAME

Номер: US20140026340A1
Автор: Buxbaum Robert E., Wright Herschel S.
Принадлежит: HTI USA, INC.

An inventive composition that has utility as an article for cleaning a target surface is provided. Embodiments of the inventive composition are readily applied to a substrate to form a cleaning article or form a free-standing article; the composition upon drying forms a matrix having a coefficient of friction of greater than one, and a glass transition temperature that is between 0° C. and 40° C. The matrix is amenable to loading with various additives illustratively including re-enforcing fibers, abrasives, plasticizers, foaming agents, fragrances, and combinations thereof. Embodiments of the inventive composition operate to clean a substrate such as a vehicle and ideally return the same to the original look and feel without requiring excessive work, or requiring the removal of too much material from the surface. 1. A surface polishing article comprising: a thermoplastic polymer with a glass transition temperature that is between 0° C. and 40° C.2. The article of further comprising an abrasive having an abrasive average particle size of less than 25 microns.3. The article of claim 2 , wherein the abrasive average particle size is less than 10 microns.4. The article of where said abrasive has an abrasive volume greater than a volume of said polymer.5. (canceled)6. (canceled)7. The article of further comprising a substrate to which said polymer is adhered.8. The article of where said substrate is chosen from one of: a towel claim 7 , a sponge claim 7 , or a foam pad.9. (canceled)10. An article for cleaning a target surface comprising: a substrate deformable to a contour of the surface claim 7 , a coating on said substrate claim 7 , said coating having an exposed face claim 7 , said coating comprising: a matrix formed of a thermoplastic elastomer with coefficient of friction of greater than one claim 7 , and a glass transition temperature that is between 0° C. and 40° C.11. The article of wherein said substrate is an open-celled or close-celled foam.12. (canceled)13. ...

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Номер записи: 44
30-01-2014 дата публикации

POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

Номер: US20140030897A1
Автор: Ogata Shinichi, Tanimoto Ryuichi, TERAMOTO Masashi
Принадлежит:

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. 1. A polishing composition that does not contain abrasives and that is used for polishing a silicon wafer , the polishing composition comprising:a polishing accelerator including an amine compound or an inorganic alkaline compound;a water-soluble polymer; anda block-type compound in which an oxyethylene group and an oxypropylene group are included in a block-type polyether.2. The polishing composition according to claim 1 , further comprising:a pH buffer including a carbonate and a hydrogencarbonate.3. A polishing method for polishing a silicon wafer using the polishing composition according to . The present invention relates to a polishing composition for polishing a silicon wafer, and a polishing method using the same.Conventionally, multi-stage polishing has been performed generally in the polishing of a silicon wafer. More specifically, the following multi-stage polishing has been performed: a silicon wafer is flattened in the primary polishing, and the surface of the silicon wafer is finished more finely in the secondary polishing and subsequent stages.In the primary polishing, a high polishing rate is required and flatness of a silicon wafer is demanded. The conventional polishing composition for the primary polishing contains abrasives in order to improve the polishing rate. As the abrasives, nanometer-order colloidal particles or the like are used.In recent years, as the required accuracy regarding wafer quality increases, the prevention and countermeasure to scratches and LPDs (light point defects) come to be needed in the primary polishing as well.The mechanical polishing with a polishing ...

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Номер записи: 45
20-02-2014 дата публикации

Abrasive and polishing composition

Номер: US20140051335A1
Автор: Eiichi Yamada, Hitoshi Morinaga, Kazusei Tamai, Naoyuki Ishihara, Taira Otsu, Tomoaki Ishibashi, Youhei Takahashi
Принадлежит: Fujimi Inc

Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m 2 /g. The zirconium oxide particles preferably have a purity of no less than 99% by mass. The polishing composition is used in, for example, polishing a hard and brittle material, such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

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Номер записи: 46
27-02-2014 дата публикации

Methods of polishing sapphire surfaces

Номер: US20140057532A1
Автор: Kim Marie LONG, Michael Kamrath
Принадлежит: ECOLAB USA INC

Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.

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Номер записи: 47
20-03-2014 дата публикации

METHOD OF ETCHING A HIGH ASPECT RATIO CONTACT

Номер: US20140077126A1
Автор: Benson Russell A., Kiehlbauch Mark W., Taylor Theodore M.
Принадлежит: MICRON TECHNOLOGY, INC.

Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of CFand/or CF, an oxygen source, and a carrier gas in combination with tetrafluoroethane (CF) or a halofluorocarbon analogue of CF. 1. An etch gas for etching a dielectric material , the etch gas comprising at least one of CFand CF , an oxygen source , an inert gas , and CF.2. The etch gas of claim 1 , further comprising an additional fluorocarbon gas having the general formula CFwhere x=1-6 and y=2-8.3. The etch gas of claim 1 , further comprising a hydrofluorocarbon gas having the general formula CHFwhere x=1-6 claim 1 , y=1-6 and z=1-6 claim 1 , or a mixture thereof.4. An etch gas for plasma etching a dielectric material claim 1 , the etch gas comprising at least one of CFand CF claim 1 , an oxygen source claim 1 , an inert gas claim 1 , and a halofluorocarbon selected from the group consisting of CFBr claim 1 , CFIand CFI.5. The etch gas of claim 1 , consisting essentially of the at least one of CFand CF claim 1 , oxygen source claim 1 , inert gas claim 1 , and CF.6. The etch gas of claim 4 , further comprising at least one of an additional fluorocarbon gas having the general formula CFwhere x=1-6 and y=2-8 claim 4 , and a hydrofluorocarbon gas having the general formula CHFwhere x=1-6 claim 4 , y=1-6 and z=1-6.7. The etch gas of claim 1 , wherein the oxygen source comprises oxygen (O) claim 1 , carbon monoxide (CO) claim 1 , or mixtures thereof.8. The etch gas of claim 1 , wherein the inert gas comprises argon (Ar) claim 1 , xenon (Xe) claim 1 , neon (Ne) claim 1 , krypton (Kr) claim 1 , or helium (He).9. The etch gas of claim 1 , further comprising a stabilizing agent.10. The etch gas of claim 1 , wherein a ratio of CF:CFis from about 0.25:1 to 1.5:1.11. The etch gas of claim 1 , wherein a ratio of CF:CFis from about 0.25:1 to 1.5:1.12. An etch gas consisting of at least one of CFand ...

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Номер записи: 48
03-04-2014 дата публикации

SINGLE CRYSTAL CBN FEATURING MICRO-FRACTURING DURING GRINDING

Номер: US20140090307A1
Автор: Ji Shuang, Long Christopher, Sowers Susanne, ZHANG KAI
Принадлежит: DIAMOND INNOVATIONS, INC.

A superabrasive material and method of making the superabrasive material are provided. The superabrasive material may comprise a superabrasive crystal having an irregular surface. The superabrasive material further comprises a plurality of structure defects within the superabrasive crystal. The plurality of structure defects may cause micro-chipping when used as grinding materials. 1. A superabrasive material comprising:a single superabrasive crystal having an irregular surface; anda plurality of structure defects within the superabrasive crystal, wherein the plurality of structure defects cause micro-chipping when used as grinding materials.2. The superabrasive material of claim 1 , wherein the superabrasive crystal is selected from a group of cubic boron nitride claim 1 , diamond claim 1 , and diamond composite materials.3. The superabrasive material of claim 1 , wherein the plurality of structure defects include micro cracks claim 1 , crystal dislocations claim 1 , or flaws.4. The superabrasive material of claim 1 , wherein the plurality of structure defects cause micro-chipping claim 1 , micro-fracture when the superabrasive materials are used for grinding materials.5. The superabrasive material of claim 1 , wherein the superabrasive material has toughness index from about 53 to about 62.6. The superabrasive material of claim 1 , wherein the superabrasive material has ellipse ratio about 1.25 to about 1.35.7. The superabrasive material of claim 1 , wherein the superabrasive material has more than 50% layered or laminar structure of single superabrasive crystal.8. The superabrasive material of claim 7 , wherein the layered or laminar microstructure aligned substantially parallel to the irregular surface to enable wear or breaking off of layer or laminar microstructure following a layer or laminar structure pattern9. The superabrasive material of claim 8 , wherein the superabrasive material has dpost-crushing particle size distribution less than 65% of dpre- ...

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Номер записи: 49
03-04-2014 дата публикации

COPPER OXIDE ETCHANT AND ETCHING METHOD USING THE SAME

Номер: US20140091058A1
Автор: MITAMURA Yoshimichi, NAKAGAWA Norikiyo, NAKATA Takuto
Принадлежит: ASAHI KASEI E-MATERIALS CORPORATION

In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof. 1. A method of etching a copper oxide-containing layer containing copper oxide (II) in an amount of 50 mass % or higher , comprising the steps of:thermally decomposing the copper oxide (II) to copper oxide (I) in a predetermined area of the copper oxide-containing layer so that the copper oxide (I) is present in the predetermined area; andselectively dissolving the copper oxide (I) in the predetermined area with an etchant containing at least a chelating agent.2. The method according to claim 1 , wherein the thermal decomposing is performed by exposure.3. The method according to claim 2 , wherein the exposure is laser exposure.4. The method according to claim 1 , wherein the chelating agent comprises;at least one amino acid selected from the group consisting of alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, ornithine, phenylalanine, serine, threonine, tryptophan, tyrosine, valine, and proline,and/orat least one acid selected from the group consisting of oxalic acid, ethylenediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, dihydroxyethylethylenediaminediacetic acid, 1,3-propanediaminetetraacetic acid, citric acid, fumaric acid, adipic acid, succinic acid, malic acid, tartaric acid, and bathocuproinesulfonic acid or at least one salt thereof.5. The method according to claim 4 , wherein the chelating agent contains at least one amino acid.6. The method according to claim 4 , wherein the ...

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Номер записи: 50
07-01-2016 дата публикации

Polishing composition and method for producing polished article

Номер: US20160001416A1
Автор: Hisanori Tansho, Kohsuke Tsuchiya
Принадлежит: Fujimi Inc

This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

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Номер записи: 51
07-01-2016 дата публикации

HIGH-PURITY 1H-HEPTAFLUOROCYCLOPENTENE

Номер: US20160002530A1
Автор: SUGIMOTO Tatsuya
Принадлежит: ZEON CORPORATION

The present invention is a 1H-Heptafluorocyclopentene having a purity of 999 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors. 1. 1H-Heptafluorocyclopentene haying a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less.2. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene being obtained by performing a step (I) that hydrogenates 1-chloroheptafluorocyclopentene through a gas phase reaction in the presence of a catalyst to obtain crude 1H-heptafluorocyclopentene claim 1 , and a step (II) that purifies the crude 1H-heptafluorocyclopentene obtained by the step (I) using a rectifying column that has a number of theoretical plates of 50 or more.3. The 1H-heptafluorocyclopentene according to claim 1 , wherein the organochlorine-based compound is either or both of chlorononafluorocyclopentane and chloroheptafluorocyclopentene.4. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene having a nitrogen content of 100 ppm by volume or less and an oxygen content of 50 ppm by volume or less.5. The 1H-heptafluorocyclopentene according to claim 3 , the 1H-heptafluorocyclopentene having a water content of 20 ppm by weight or less.6. A method for using the 1H-heptafluorocyclopentene according to as a dry etching gas.7. A method for using claim 1 , the 1H-heptafluorocyclopentene according to as a plasma CVD reactive gas.8. A container equipped with a valve that is filled with the 1H-heptafluorocyclopentene according to . The present invention relates to high-purity 1H-heptafluorocyclopentene that may be useful as a plasma reaction gas (e.g., dry etching gas or CVD gas), a fluorine-containing medicine intermediate, a hydrofluorocarbon-based solvent, and the like.In recent years, semiconductor production ...

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Номер записи: 52
02-01-2020 дата публикации

Low Oxide Trench Dishing Chemical Mechanical Polishing

Номер: US20200002608A1
Автор: Hongjun Zhou, Joseph D. ROSE, Krishna P. Murella, Mark Leonard O'Neill, Xiaobo Shi
Принадлежит: Versum Materials US LLC

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

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Номер записи: 53
07-01-2021 дата публикации

Polishing compositions for reduced defectivity and methods of using the same

Номер: US20210002511A1
Автор: James Mcdonough, Saul Alvarado
Принадлежит: Fujifilm Electronic Materials USA Inc

Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

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Номер записи: 54
07-01-2021 дата публикации

WATER-SOLUBLE FLUX AND COPPER MATERIAL PICKLING METHOD

Номер: US20210002550A1
Автор: Huang Gang, Wang Junhua, Xing Lusheng, Zeng Xianhua
Принадлежит:

The present invention belongs to the technical field of solder fluxes, and in particular relates to a water-soluble flux and a copper material pickling method. The water-soluble flux provided by the present invention includes an organic acid, an alcohol ether solvent, and deionized water. The organic acid is used as an active component of the present invention, and under the action of the alcohol ether solvent, oxides and impurities on the surface of a part to be welded can be sufficiently removed, and adhering residue of an acidic substance on the surface of the part to be welded can be reduced. In the process of tin plating of the part to be welded treated by the water-soluble flux provided by the present invention, the splash of tin liquid can be effectively inhibited, and the utilization rate of tin is improved. 1. A water-soluble flux , comprising the following components: an organic acid , an alcohol ether solvent , and deionized water.2. The water-soluble flux according to claim 1 , comprising the following components by mass parts claim 1 , 10-20 parts of the organic acid claim 1 , 1-10 parts of the alcohol ether solvent and 70-90 parts of the deionized water.3. The water-soluble flux according to claim 1 , wherein the organic acid comprises formic acid and/or acetic acid.4. The water-soluble flux according to claim 1 , wherein the alcohol ether solvent comprises one or more of ethylene glycol monobutyl ether claim 1 , dipropylene glycol methyl ether claim 1 , diethylene glycol monoethyl ether claim 1 , and tripropylene glycol monomethyl ether.5. The water-soluble flux according to claim 4 , wherein the alcohol ether solvent is ethylene glycol monobutyl ether and tripropylene glycol monomethyl ether.6. The water-soluble flux according to claim 5 , wherein the ratio of the mass of the ethylene glycol monobutyl ether to the mass of the tripropylene glycol monomethyl ether is (3-5):1.7. A copper material pickling method claim 5 , comprising:{'claim-ref': {'@ ...

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Номер записи: 55
07-01-2021 дата публикации

ETCHING OF WATER-SENSITIVE OPTICS WITH WATER-IN-OIL EMULSIONS

Номер: US20210003841A1
Автор: Adams John, Baxamusa Salmaan H., Ehrmann Paul, Laurence Ted, Menor Marlon G., Schaffers Kathleen I.
Принадлежит:

In one inventive concept, a method for etching an optic includes obtaining a microemulsion, where the microemulsion includes a continuous oil phase, a surfactant system comprising at least one surfactant, and water, submerging at least a portion of the optic in the microemulsion, and agitating by ultrasonication the microemulsion for etching the optic submerged therein. 1. A method for etching an optic , the method comprising:obtaining a microemulsion, wherein the microemulsion comprises a continuous oil phase, a surfactant system comprising at least one surfactant, and water;submerging at least a portion of the optic in the microemulsion; andagitating by ultrasonication the microemulsion for etching the optic submerged therein.2. The method as recited in claim 1 , wherein the microemulsion comprises an effective amount of the surfactant system to disperse the water in the continuous oil phase.3. The method as recited in claim 1 , wherein the microemulsion is a water-in-oil emulsion.4. The method as recited in claim 1 , wherein the continuous oil phase is present in the microemulsion in a range of about 60 wt % to about 90 wt % relative to a total weight of the microemulsion.5. The method as recited in claim 1 , wherein the continuous oil phase is present in the microemulsion in a range of about 70 wt % to about 85 wt % relative to a total weight of the microemulsion.6. The method as recited in claim 1 , wherein the surfactant system is present in the microemulsion in a range of about 10 wt % to about 40 wt % relative to a total weight of the microemulsion.7. The method as recited in claim 1 , wherein the surfactant system is present in the microemulsion in a range of about 13 wt % to about 29 wt % relative to a total weight of the microemulsion.8. The method as recited in claim 1 , wherein the water is present in the microemulsion in a range of greater than 0 wt % to about 10 wt % relative to total weight of the microemulsion.9. The method as recited in claim 1 , ...

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Номер записи: 56
07-01-2021 дата публикации

SURFACE TREATMENT COMPOSITION, METHOD FOR PRODUCING SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

Номер: US20210005462A1
Автор: ISHIDA Yasuto, ONISHI SHOGO, YAMAZAKI Ayano, YOSHINO Tsutomu
Принадлежит: FUJIMI INCORPORATED

The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished. 1. A composition for surface treatment comprising: a silicone-based compound having an HLB of more than 7; and water , the composition used to treat a polished object to be polished.2. The composition for surface treatment according to claim 1 , further comprising a dispersant.3. The composition for surface treatment according to claim 2 , wherein the dispersant is a polymer.4. The composition for surface treatment according to claim 1 , the composition containing substantially no abrasive grain.5. The composition for surface treatment according to claim 1 , wherein the polished object to be polished contains polysilicon or silicon oxide.6. A method for manufacturing the composition for surface treatment according to claim 1 , the method comprising mixing a silicone-based compound having an HLB of more than 7 and water.7. A method for surface treatment claim 1 , the method comprising treating a surface of a polished object to be polished using the composition for surface treatment according to .8. The method for surface treatment according to claim 7 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.9. A method for manufacturing a semiconductor substrate claim 7 , the method comprising treating a surface of a polished object to be polished by the method for surface treatment according to claim 7 ,wherein the polished object to be polished is a polished semiconductor substrate. The present invention relates to a composition for surface treatment, a method for manufacturing the composition for surface treatment, a method for surface treatment, and a method for manufacturing a semiconductor ...

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Номер записи: 57
20-01-2022 дата публикации

Silicon wafer polishing composition and method

Номер: US20220017781A1
Автор: Akihisa NAMIKI, Hiroshi Kitamura, Takeshi Saito, Tsuyoshi Masuda, Yoshiyuki Matsumura
Принадлежит: CMC Materials LLC

A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight percent to about 2 weight percent of a dipolar aprotic solvent at point of use, and a pH in a range from about 8 to about 12. A method for polishing a silicon wafer may include contacting the wafer with the above described polishing composition, moving the polishing composition relative to the wafer, and abrading the wafer to remove silicon from the wafer and thereby polish the wafer.

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Номер записи: 58
08-01-2015 дата публикации

MIXTURE COMPOSITION CONTAINING AMINO-FUNCTIONAL SILOXANES, HYDROPHOBIC PARTICLES AND HIGH MOLECULAR WEIGHT SILICONES AND ITS USE FOR LEATHER TREATMENT

Номер: US20150008355A1
Автор: Mund Christian, Peggau Joerg
Принадлежит: Evonik Industries AG

The invention relates to mixture compositions containing amino-functional siloxanes, hydrophobic particles and high molecular weight silicones and their use for leather treatment. 1. A mixture composition comprising:A) 50 wt % -96.5 wt % of at least one amino-functional siloxane,B) 3 wt% -40 wt% of at least one high molecular weight silicone having a molecular weight average of at least 20,000 g/mol, andC) 0.5 wt % -10 wt % of hydrophobic particles, wherein the weight percentages are based on total components A), B) and C).3. A mixture composition according to claim 2 , wherein at least 50% of the Rmoieties are=R.4. A mixture composition according to claim 1 , wherein said at least one high molecular weight silicone is selected from the group consisting of linear silicone oils and branched silicone resins.5. A mixture composition according to claim 1 , wherein said hydrophobic particles have having a particle size distribution maximum in a range from 0.5-30 μm.6. A mixture composition according to claim 1 , wherein said hydrophobic particles are selected from hydrophobic or hydrophobized metal oxides claim 1 , metal soaps claim 1 , alkaline earth metal carbonates and alkaline earth metal salts of long-chain fatty acids having 12 to 22 carbon atoms claim 1 , amides of said fatty acids claim 1 , micronized waxes claim 1 , and oligo-ureas.7. A mixture composition according to claim 2 , wherein{'sup': 1', '3, 'sub': 2', '3', '2', '2', '3', '2', '2', '2, 'Rof formula (I) represents methyl and Rof formula (I) represents —(CH)—NHor —(CH)NH—(CH)NH, and'}{'sup': 5', '6', '6', '5, 'sub': 2', '1/2', '4/2, 'component B) is selected from the group of methyl- and/or phenyl-substituted having average molecular weights of more than 50 000 g/mol, or from the group of branched silicone resins consisting essentially of RRSiO(“M”)- and SiO(“Q”)- and/or RSiO3/2 (“T”) units, where Rrepresents methyl and the molar ratio M to Q and T units (M/(Q+T)) is in a range from 0.5/1 to 1.5/1 and ...

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Номер записи: 59
12-01-2017 дата публикации

POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT

Номер: US20170009102A1
Автор: Hoshi Yousuke, KOYAMA Naoyuki, NOBE Shigeru, RYUZAKI Daisuke
Принадлежит:

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent. 1. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive , wherein the additive contains at least one selected from the group consisting of the following compounds (1) and (2):(1) an allylamine polymer or a derivative thereof and(2) a diallylamine polymer or a derivative thereof2. The polishing agent according to claim 1 , wherein the average particle size of the tetravalent metal hydroxide particles is from 1 nm to 400 nm.3. The polishing agent according to claim 1 , wherein the pH of the polishing agent is from 3.0 to 7.0.4. The polishing agent according to claim 1 , wherein the content of the tetravalent metal hydroxide particles is from 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the polishing agent.5. The polishing agent according to claim 1 , wherein the zeta potential of the tetravalent metal hydroxide particles in the polishing agent is +10 mV or higher.6. The polishing agent according to claim 1 , wherein the content in total of the additive is 0.0001 by weight or more relative to 100 parts by weight of the polishing agent.7. The polishing agent according to claim 1 , further comprising polyvinyl alcohol.8. The polishing agent according to claim 1 , which is used for polishing a surface to be polished containing at least silicon oxide at the surface.9. The ...

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Номер записи: 60
10-01-2019 дата публикации

HEXAVALENT CHROMIUM FREE ETCH MANGANESE VACUUM EVAPORATION SYSTEM

Номер: US20190009185A1
Автор: Bauman Mark, Lacey Daniel, Vogelpohl Gerry
Принадлежит: SRG GLOBAL, INC.

Methods and systems for removing water from a manganese-based etchant bath are disclosed. Water is removed from the manganese-based etchant bath by transferring a portion of the manganese-based etchant bath to a vacuum evaporator for processing and transferring the concentrated portion of the manganese-based etchant bath back to the manganese-based etchant bath. 1. A method for removing water from a source of manganese ions , the method comprising:directing at least a portion of the source of manganese ions through a conduit, wherein the conduit comprises a filter for filtering undissolved particles;concentrating the portion of the source of manganese ions with a vacuum evaporator;returning the concentrated portion to a manganese-based etchant bath.2. The method according to claim 1 , wherein the concentrated portion comprises an acid.3. The method according to claim 2 , further comprising purifying the acid.4. The method according to claim 1 , wherein the vacuum evaporator further comprises a heat source.5. The method according to claim 1 , wherein the manganese-based etchant bath is configured to etch a substrate.6. The method according to claim 1 , wherein a second conduit returns the concentrated portion to the manganese-based etchant bath.7. The method according to claim 1 , wherein the first conduit further comprises a one-way valve for preventing the portion of the source of manganese ions from returning to the source of manganese ions via the conduit.8. A method for removing water from a manganese-based etchant bath claim 1 , the method comprising:directing at least a portion of a manganese-based etchant bath through a conduit, wherein the conduit comprises a one-way valve for prohibiting the portion of the manganese-based etchant bath from returning to the manganese-based etchant bath via the conduit;concentrating the portion of the manganese-based etchant bath with a vacuum evaporator;returning the concentrated portion to the manganese-based etchant bath.9 ...

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Номер записи: 61
15-01-2015 дата публикации

Method For Separating Polishing Material And Regenerated Polishing Material

Номер: US20150013235A1
Автор: Maezawa Akihiro, Nagai Yuuki, Takahashi Atsushi
Принадлежит:

Method for separating a polishing material, which is capable of separating and recovering cerium oxide from a used polishing material that is mainly composed of cerium oxide and a regenerated polishing material which can be obtained by the separation method. This method for separating a polishing material is characterized in that a divalent alkaline earth metal salt is added into the slurry of the used polishing material, while controlling the temperature of the slurry within the range of 10-70 DEG C., thereby causing the polishing material to aggregate under such conditions that the mother liquor has a pH of less than 10.0 as the pH is converted to one at 25 DEG C. so that the polishing material is separated from the mother liquor. 1. A method for separating a cerium oxide containing-abrasive from a used abrasive-containing slurry that contains cerium oxide , the method comprising:adding a divalent alkali earth metal salt to the used abrasive slurry while a temperature of the used abrasive-containing slurry is regulated in a range from 10 to 70° C.;aggregating the abrasive at a converted pH of lower than 10 of a mother liquid at 25° C.; andseparating the abrasive from the mother liquid.2. The method of claim 1 , whereinthe divalent alkali earth metal salt is a magnesium salt.3. The method of claim 1 , whereinthe range of the regulated temperature of the used abrasive-containing slurry is from 10 to 40° C.4. The method of claim 1 , whereina separation container used in the method includes a temperature regulator.5. A regenerated abrasive produced by the method of . The present invention relates to a method for separating an abrasive through collecting a used cerium oxide from a used cerium oxide-containing abrasive to reuse the collected cerium oxide as a regenerated cerium oxide-containing abrasive, and an abrasive regenerated through the method.As an abrasive for finely polishing an object (e.g. an optical glass, a glass substrate for an information storage medium ...

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Номер записи: 62
15-01-2015 дата публикации

Polishing composition and method for producing semiconductor substrate

Номер: US20150014579A1
Автор: Hiroyuki Oda, Shinichiro Takami, Shuhei Takahashi, Toshihiro Miwa, Yutaka Inoue
Принадлежит: Fujimi Inc

A polishing composition contains: silicon dioxide having an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by the BET method; a nitrogen-containing water-soluble polymer; and a basic compound. The value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 1,500,000 when in one liter of the polishing composition, A is defined as the number of silicon dioxide, B is defined as the number of monomer units of the nitrogen-containing water-soluble polymer, and C is defined as the number of molecules of the basic compound. Alternatively, the value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 100,000. The polishing composition is used, for example, for polishing a semiconductor substrate.

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Номер записи: 63
14-01-2021 дата публикации

SEMICONDUCTOR SUBSTRATE POLISHING METHODS

Номер: US20210013092A1
Автор: Capstick James Raymond, Ragan Tracy Michelle, Tanna Vandan, Wang Hui
Принадлежит:

Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set. 1. A method for polishing a semiconductor substrate having a front surface and a back surface generally parallel to the front surface , the method comprising contacting the front surface of the substrate with a polishing pad in the presence of a polishing slurry , the polishing slurry comprising:{'sub': '1', 'a first set of silica particles, the first set of silica particles having a silica content of Xwt %; and'}{'sub': 2', '2', '1, 'a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of Xwt %, wherein Xis greater than X, wherein the weight ratio of the first set of silica particles to the second set of silica particles is from about 5:1 to about 1:5.'}2. The method as set forth in wherein the first set of silica particles are polymer-encapsulated.3. The method as set forth in wherein the back surface is not polished while polishing the front surface and wherein at least about 5 μm of material is removed from the front surface of the substrate.4. The method as set forth in wherein the substrate has a diameter of about 200 mm.5. The method as set forth in wherein the ratio of Xto about Xis at least about 2:1.6. The method as set forth in wherein the first set of silica particles and the second set of silica particles each have an average diameter of less than about 100 nm and the difference between the average diameter of the first set of particles and the average diameter of the second set of particles is less than about 30 nm.7. The method as set forth in comprising polishing a population of wafers with the polishing slurry claim 1 , wherein at least about 20% of the wafers have a roll-off amount of less than about −35 nm.8. The method as set forth in wherein the roll ...

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Номер записи: 64
03-02-2022 дата публикации

POLISHING LIQUID

Номер: US20220033684A1
Автор: ARIFUKU Norihisa, SAKAI Ayumu, Sato Takeshi
Принадлежит:

Provided is a polishing liquid that is used when one surface of a wafer is polished by use of a fixed abrasive grain polishing pad with abrasive grains fixed in the pad, in which an organic salt that exhibits a basic property by hydrolysis and contains no metal and an organic base that contains no metal are dissolved, and no abrasive grains are contained. Preferably, the organic salt includes a strong basic cation and a weak acidic anion, and the organic base contains at least one of ammonia, an amine, and a basic amino acid. 1. A polishing liquid that is used when one surface of a wafer is polished by use of a fixed abrasive grain polishing pad with abrasive grains fixed in the pad ,wherein an organic salt that exhibits a basic property by hydrolysis and contains no metal and an organic base that contains no metal are dissolved, and no abrasive grains are contained.2. The polishing liquid according to claim 1 ,wherein the organic salt includes a strong basic cation and a weak acidic anion, andthe organic base contains at least one of ammonia, an amine, and a basic amino acid.3. The polishing liquid according to claim 1 ,wherein a concentration of the organic salt is equal to or more than 0.50 wt %, anda concentration of the organic base is equal to or more than 0.025 wt %. The present invention relates to a polishing liquid used when polishing a wafer.Electronic equipment such as a mobile phone and a personal computer has device chips mounted thereon. The device chips are manufactured, for example, by processing a silicon wafer formed with devices such as integrated circuits (ICs) and large scale integration (LSI) circuits on the front surface side thereof. Specifically, first, the back surface side of the wafer is roughly ground by use of a grinding apparatus, and then, the back surface side is subjected to finish grinding, to thin the wafer to a predetermined thickness (see, for example, Japanese Patent Laid-open No. 2000-288881). In general, upon the grinding ...

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Номер записи: 65
03-02-2022 дата публикации

Self-orienting shaped abrasive particles

Номер: US20220033699A1
Автор: Cory M. ARTHUR, David T. BUCKLEY, Dwight D. Erickson, Emily L. Bowen, Fay T. Salmon, Henry M. O'Callaghan, Joseph B. Eckel, Thomas J. Nelson, Wayne W. Maurer
Принадлежит: 3M Innovative Properties Co

Various embodiments disclosed relate to a shaped abrasive particle. The shaped abrasive particle includes a first non-planar continuous surface and a second non-planar continuous surface. The shaped abrasive particle further includes at least one sidewall or edge joining the first non-planar continuous surface and the second non-planar continuous surface. The shaped abrasive particle further includes one or more vertices. The shaped abrasive particle is configured to have a stable resting position on a substantially planar substrate, wherein at least one vertex is oriented in a substantially upward direction relative to the planar substrate.

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Номер записи: 66
15-01-2015 дата публикации

FINE CONCAVO-CONVEX STRUCTURE PRODUCT, HEAT-REACTIVE RESIST MATERIAL FOR DRY ETCHING, MOLD MANUFACTURING METHOD AND MOLD

Номер: US20150017275A1
Автор: MITAMURA Yoshimichi
Принадлежит:

A fine concavo-convex structure product () is provided with an etching layer (), and a resist layer () comprised of a heat-reactive resist material for dry etching provided on the etching layer (), a concavo-convex structure associated with opening portions () formed in the resist layer () is formed in the etching layer (), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 μm, a pattern depth H of the fine pattern ranges from 1 nm to 10 μm, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi. 1. A fine concavo-convex structure product comprising:an etching layer; anda resist layer comprised of a heat-reactive resist material for dry etching provided on the etching layer, wherein a concavo-convex structure associated with opening portions formed in the resist layer is formed in the etching layer, a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 μm, a pattern depth H of the fine pattern ranges from 1 nm to 10 μm, and a pattern cross-sectional shape of the fine pattern is a trapezoid, triangle or a mixed shape of thereof.2. The fine concavo-convex structure product according to claim 1 , wherein in any one of a plurality of concave portions forming the concavo-convex structure claim 1 , when boundaries between an opening portion of a concave portion and a surface on an upper side of the etching layer are two lines and the two lines do not cross each other claim 1 , one point on one of the two lines and one point on the other one having the shortest distance therebetween are made two highest points claim 1 , and the pattern cross-sectional shape is a shape drawn by connecting claim 1 , with straight lines claim 1 , the two ...

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Номер записи: 67
15-01-2015 дата публикации

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN

Номер: US20150017454A1
Автор: Lange Roland, Lauter Michael, Li Yuzhuo, Noller Bastian Marten
Принадлежит: BASF SE

Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium. 1. A chemical mechanical polishing (CMP) composition comprising(A) inorganic particles, organic particles, or a mixture or composite thereof,(B) a protein, and(C) an aqueous medium.2. The CMP composition according to claim 1 , wherein the protein (B) is a protein comprising cysteine as amino acid unit.3. The CMP composition according to claim 1 , wherein the protein (B) is a fungal protein.4. The CMP composition according to claim 1 , wherein the protein (B) is a protein comprising more than 100 amino acid units.5. The CMP composition according to claim 1 , wherein the protein (B) is hydrophobin or comprises at least one hydrophobin unit.6. The CMP composition according to claim 1 , wherein the particles (A) are ceria particles.7. The CMP composition according to claim 1 , wherein the mean particle size of the particles (A) is from 50 nm to 300 nm claim 1 , as determined by dynamic light scattering techniques.8. The CMP composition according to claim 1 , further comprising(H) a sugar compound.9. The CMP composition according to claim 8 , whereinthe sugar compound (H) is selected from the group consisting of mono-, di-, tri-, tetra-, penta-, oligo- and polysaccharides, and oxidized monosaccharides.10. The CMP composition according to whereinthe sugar compound (H) is selected from the group consisting of glucose, galactose, saccharose, sucralose, and stereoisomers thereof.11. The CMP composition according to claim 1 , wherein the pH value of the composition is in the range of from 5 to 9.12. The CMP composition according to claim 1 , wherein(A) are ceria particles, and(B) is hydrophobin.13. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate in the presence of a CMP composition as defined in .14. A substrate ...

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Номер записи: 68
19-01-2017 дата публикации

POLISHING COMPOSITION AND METHOD FOR POLISHING MAGNETIC DISK SUBSTRATE

Номер: US20170015867A1
Автор: IWATA Toru, SUGAWA Akira
Принадлежит: YAMAGUCHI SEIKEN KOGYO CO., LTD.

Embodiments of the invention provide a polishing composition including colloidal silica having an average particle size of 5 to 200 nm and pulverized wet-process silica particles having an average particle size of 0.1 to 1.0 μm, wherein a value of the ratio of the average particle size of the wet-process silica particles to that of the colloidal silica is from 2.0 to 30.0. The polishing composition, according to various embodiments, achieves a high polishing rate and has a good surface smoothness, without the use of alumina particles. 1. A polishing composition , comprising:colloidal silica having an average particle size of 5 to 200 nm, andpulverized wet-process silica particles having an average particle size of 0.1 to 1.0 μm,wherein a ratio of the average particle size of the wet-process silica particles to that of the colloidal silica is from 2.0 to 30.0.2. The polishing composition according to claim 1 , wherein a total concentration of the colloidal silica and the wet-process silica particles is 1 to 50 mass % claim 1 , and wherein the colloidal silica accounts for 5 to 95 mass % and the wet-process silica particles account for 5 to 95 mass % claim 1 , of the whole of the colloidal silica and the wet-process silica particles.3. The polishing composition according to claim 1 , wherein the composition is an aqueous composition further comprising an acid and art oxidizing agent claim 1 , and has a pH value of 0.1 to 4.0.4. The polishing composition according to claim 1 , wherein the composition is used for polishing an aluminum magnetic disk substrate that is plated with electroless nickel-phosphorus.5. A method for polishing a magnetic disk substrate claim 1 , wherein the magnetic disk substrate is polished using the polishing composition according to . This application claims the benefit of and priority under 35 U.S.C. §119 to PCT Patent Application No. PCT/JP2015/058818, entitled, “POLISHING AGENT COMPOSITION AND METHOD FOR POLISHING MAGNETIC DISK SUBSTRATE,” ...

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Номер записи: 69
19-01-2017 дата публикации

POLISHING COMPOSITION AND METHOD FOR POLISHING MAGNETIC DISK SUBSTRATE

Номер: US20170015868A1
Автор: IWATA Toru, SUGAWA Akira
Принадлежит: YAMAGUCHI SEIKEN KOGYO CO., LTD.

Embodiments of the invention provide a polishing composition including colloidal silica, pulverized wet-process silica particles, and a water-soluble polymer compound, wherein the water-soluble polymer compound is a polymer or copolymer having a constituent unit derived from an unsaturated aliphatic carboxylic acid. Various embodiments achieve a high polishing rate and obtain a good surface smoothness and end-face shape without the use of alumina particles. 1. A polishing composition , comprising:colloidal silica;pulverized wet-process silica particles; anda water-soluble polymer compound,wherein the water-soluble polymer compound is a polymer or copolymer having a constituent unit derived from an unsaturated aliphatic carboxylic acid.2. The polishing composition according to claim 1 , wherein the colloidal silica has an average particle size of 5 to 200 nm claim 1 , and the wet-process silica particles have an average particle size of 0.1 to 1.0 μm.3. The polishing composition according to claim 1 , wherein a value of the ratio of the average particle size of the wet-process silica particles to that of the colloidal silica is from 2.0 to 30.0.4. The polishing composition according to claim 1 , wherein a total concentration of the colloidal silica and the wet-process silica particles is 1 to 50 mass % claim 1 , and the colloidal silica accounts for 5 to 95 mass % and the wet-process silica particles account for 5 to 95 mass % claim 1 , of the whole of the colloidal silica and the wet-process silica particles.5. The polishing composition according to claim 1 , wherein the water-soluble polymer compound is a copolymer further having a constituent unit derived from a hydrophobic monomer.6. The polishing composition according to claim 1 , wherein the water-soluble polymer compound has an average molecular weight of 500 to 20000.7. The polishing composition according to claim 1 , wherein a content of the water-soluble polymer compound is 0.0001 to 1.0 mass %.8. The ...

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Номер записи: 70
19-01-2017 дата публикации

Epoxy-fortified floor polishes

Номер: US20170015869A1
Автор: Afua Sarpong KARIKARI, Caroline Woelfle-Gupta, Paul Mercando, Theodore Tysak
Принадлежит: Dow Global Technologies LLC, Rohm and Haas Co

An aqueous composition comprising: (a) an aromatic-acrylic polymer comprising from 3 to 11 wt % polymerized units of C 3 -C 6 carboxylic acid monomers and from 0.2 to 3 wt % polymerized units of anti-agglomerating monomers; (b) a reactive polyfunctional thermosetting resin; (c) a polyvalent metal ion; and (d) a polyfunctional curing agent, wherein the curing agent is stored separately from the thermosetting resin.

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Номер записи: 71
19-01-2017 дата публикации

ETCHING COMPOSITIONS FOR TRANSPARENT CONDUCTIVE LAYERS COMPRISING SILVER NANOWIRES

Номер: US20170015903A1
Автор: Wang Hailiang
Принадлежит:

This invention in general relates to a transparent conductive layer comprising a silver nanowire. This invention further relates to an etching composition suitable for etching a transparent conductive layer comprising a silver nanowire to form a pattern. This invention further relates to a transparent conductive electrode manufactured by etching a transparent conductive film comprising a silver nanowire. The etching composition may comprise an oxidizing agent and a ligand. The oxidizing agent may be a first chemical compound that can react with silver metal to form a silver compound; and the ligand may be a second chemical compound that can react with the silver compound to form a water soluble coordination complex of the silver ion. 1. An etching composition suitable for etching a silver nanowire incorporated in a transparent conductive nanocomposite layer comprising:at least one oxidizing agent; andat least one ligand;wherein the at least one oxidizing agent is a first chemical compound that can react with silver to form a silver compound; andwherein the at least one ligand is a second chemical compound that can react with the silver compound to form a water soluble coordination complex of silver ion.2. The etching composition of claim 1 , wherein the at least one oxidizing agent comprises an iron (III) salt claim 1 , a copper (II) salt claim 1 , or any combination thereof.3. The etching composition of claim 1 , wherein the at least one oxidizing agent comprises iron(III) chloride claim 1 , FeCl; iron (III) sulfate claim 1 , Fe(SO); iron(III) sulfamate claim 1 , Fe(SONH); iron mesylate claim 1 , Fe(SOCH); copper (II) chloride claim 1 , CuCl; KMnO; or any combination thereof.4. The etching composition of claim 1 , wherein the at least one ligand comprises acetic acid claim 1 , lactic acid claim 1 , succinimide claim 1 , 5 claim 1 ,5 dimethyl hydantoin claim 1 , a buffer solution claim 1 , or any combination thereof.5. The etching composition of claim 1 , wherein ...

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Номер записи: 72
18-01-2018 дата публикации

Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Номер: US20180016468A1
Автор: Haci Osman GUEVENC, Julian Proelss, Leonardus Leunissen, Max SIEBERT, Michael Lauter, Reza Golzarian, Robert REICHARDT, Sheik Ansar Usman Ibrahim, Yongqing Lan
Принадлежит: BASF SE

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R 1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

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Номер записи: 73
21-01-2016 дата публикации

LIQUID COMPOSITION AND ETCHING METHOD FOR ETCHING SILICON SUBSTRATE

Номер: US20160020113A1
Автор: Fujita Hirohisa, Koyama Shuji, Yonemoto Taichi
Принадлежит:

An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate.

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Номер записи: 74
17-04-2014 дата публикации

COMPOSITIONS FOR USE IN SEMICONDUCTOR DEVICES

Номер: US20140103251A1
Автор: Yates Donald L.
Принадлежит: MICRON TECHNOLOGY, INC.

An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be foimulated to selectively remove the photoresist layer, leaving the underlying low-k dielectric layer essentially intact. 1. A composition , comprising ammonium fluoride , an organic acid , and a solvent.2. (canceled)3. The composition of claim 1 , wherein the composition has a pH of from about 3 to about 6.4. The composition of claim 1 , wherein the composition has a pH of from about 4 to about 6.5. The composition of claim 1 , wherein the organic acid comprises formic acid claim 1 , acetic acid claim 1 , citric acid claim 1 , ascorbic acid claim 1 , propionic acid claim 1 , butyric acid claim 1 , isobutyric acid claim 1 , benzoic acid claim 1 , gluconic acid claim 1 , malic acid claim 1 , malonic acid claim 1 , succinic acid claim 1 , tartaric acid claim 1 , gallic acid claim 1 , oxalic acid claim 1 , tartaric acid claim 1 , or mixtures thereof.6. The composition of claim 1 , wherein the organic acid comprises an aqueous solution comprising from about 20% to about 60% of the organic acid.7. The composition of claim 1 , wherein the composition comprises ammonium fluoride ...

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Номер записи: 75
22-01-2015 дата публикации

CMP SLURRY COMPOSITION FOR POLISHING AN ORGANIC LAYER AND METHOD OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20150021513A1
Автор: CHOI Jung-Sik, Han Choong-Ho, Hong Gi-Sik, KIM Kwang-bok, Kim Sang-Kyun, Kim Ye-Hwan, Kim Yun-Jeong
Принадлежит:

A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer. 1. A chemical mechanical polishing (CMP) slurry composition for polishing a layer , the composition comprising:from about 0.001% to about 5% by weight of oxide-polishing particles;from about 0.1% to about 5% by weight of an oxidant;from 0% to about 5% by weight of a polishing regulator;from 0% to about 3% by weight of a surfactant;from 0% to about 3% by weight of a pH regulator; andfrom about 79% to about 99.889% by weight of deionized water.2. The CMP slurry composition of claim 1 , wherein the oxide-polishing particles include at least one of silica (SiO) claim 1 , ceria (CeO) claim 1 , and alumina (AlO).3. The CMP slurry composition of claim 1 , wherein the oxide-polishing particles have a grain size ranging from about 30 nm to about 120 nm.4. The CMP slurry composition of claim 1 , wherein the oxidant comprises at least one of hydrogen peroxide claim 1 , superoxide claim 1 , dioxygenyl claim 1 , ozone claim 1 , ozonide claim 1 , peroxide claim 1 , fluorine claim 1 , chlorine claim 1 , chlorite claim 1 , chlorate claim 1 , perchlorate claim 1 , halogen compounds claim 1 , nitric acid claim 1 , nitrate claim 1 , hypochlorite claim 1 , hypohalite claim 1 , chromium trioxide claim 1 , pyridinium chlorochromate claim 1 , chromate claim 1 , dichromate claim 1 , chromium compound claim 1 , potassium permanganate ...

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Номер записи: 76
28-01-2016 дата публикации

COMPOSITION COMPRISING HF AND 3,3,3-TRIFLUORO-2-CHLOROPROPENE

Номер: US20160023176A1
Автор: Bonnet Philippe, COLLIER Bertrand, Deur-Bert Dominique, Wendlinger Laurent
Принадлежит: Arkema France

An azeotropic or quasi-azeotropic composition including hydrogen fluoride, 3,3,3-trifluoro-2-chloropropene and one or more (hydro)halogen-carbon compounds including between 1 and 3 carbon atoms. Also an azeotropic or quasi-azeotropic composition including hydrogen fluoride, 3,3,3-trifluoro-2-chloropropene, and one or more compounds selected from among 1,3,3,3-tetrafluoropropene, 1,1,1,2,2-pentafluoropropane, 2,3,3,3-tetrafluoropropene, 3,3,3-trifluoropropene, E-3,3,3-trifluoro-1-chloropropene, trifluoropropyne, 1,1,3,3-pentafluoropropane, 1,1,1,3,3-pentafluoropropane, 1,1,1,3,3-pentafluoropropene, 1,1,1,2,3-pentafluoropropene and 2-chloro,1,1,1,2-1 tetrafluoropropane. 1. An azeotropic or quasi-azeotropic composition comprising hydrogen fluoride , 3 ,3 ,3-trifluoro-2-chloropropene and one or more (hydro)halocarbon compounds comprising between 1 and 3 carbon atoms.2. The composition as claimed in claim 1 , in which it comprises hydrogen fluoride claim 1 , 3 claim 1 ,3 claim 1 ,3-trifluoro-2-chloropropene claim 1 , and one or more compounds chosen from E-1 claim 1 ,3 claim 1 ,3 claim 1 ,3-tetrafluoropropene claim 1 , Z-1 claim 1 ,3 claim 1 ,3 claim 1 ,3-tetrafluoropropene claim 1 , 3 claim 1 ,3 claim 1 ,3-trifluoropropene claim 1 , 2 claim 1 ,3 claim 1 ,3 claim 1 ,3-tetrafluoropropene claim 1 , E-3 claim 1 ,3 claim 1 ,3-trifluoro-1-chloropropene claim 1 , trifluoropropyne claim 1 , 1 claim 1 ,1 claim 1 ,1 claim 1 ,3 claim 1 ,3-pentafluoropropane claim 1 , 1 claim 1 ,1 claim 1 ,1 claim 1 ,3 claim 1 ,3-pentafluoropropene claim 1 , 1 claim 1 ,1 claim 1 ,1 claim 1 ,2 claim 1 ,2-pentafluoropropane claim 1 , 2-chloro claim 1 ,1 claim 1 ,1 claim 1 ,1 claim 1 ,2-tetrafluoropropane and 1 claim 1 ,1 claim 1 ,1 claim 1 ,2 claim 1 ,3-pentafluoropropene.3. The composition as claimed in claim 1 , in which it comprises hydrogen fluoride claim 1 , 3 claim 1 ,3 claim 1 ,3-trifluoro-2-chloropropene and at least one or more organic compounds chosen from 1 claim 1 ,1 claim 1 ,1 claim 1 ,2 ...

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Номер записи: 77
28-01-2016 дата публикации

METHODS OF MANUFACTURING ABRASIVE PARTICLE AND POLISHING SLURRY

Номер: US20160024350A1
Автор: Jung Seung Won
Принадлежит:

Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent. 1. A method of manufacturing a polishing slurry polishing a workpiece , wherein an abrasive particle which polishes the workpiece and has a plurality of protrusions protruded outward is dispersed in a dispersing agent.2. The method of claim 1 , wherein the abrasive particle comprises polyhedral crystal faces claim 1 , and the protrusion is formed from an edge where at least two of the polyhedral crystal faces meet.3. The method of claim 2 , wherein the auxiliary particle to the mother particle is formed at a size ratio of approximately 100:1 to approximately 5:1.4. The method of claim 3 , wherein the abrasive particle is contained in an amount ranging from approximately 0.1 wt % to approximately 5 wt % based on a solid component.5. The method of claim 1 , further comprising adding a polishing accelerating agent claim 1 ,wherein the polishing accelerating agent comprises a cationic low molecular weight polymer, a cationic high molecular weight polymer, a hydroxylic acid, and an amino acid, which convert a surface potential of the abrasive particle to a minus potential.6. The method of claim 5 , wherein the polishing accelerating agent is contained in an amount of approximately 0.01 wt % to approximately 0.1 wt % based on 1 wt % of the abrasive particle.7. The method of claim 6 , wherein the cationic low molecular and high molecular polymers comprise at least one of an oxalic acid claim 6 , a citric acid claim 6 , a polysulfonic acid claim 6 , a polyacrylic acid claim 6 , a polymethacrylic acid (Darvan C-N) claim 6 , copolymeric acids thereof claim 6 , or salts thereof claim 6 , the hydroxylic acid comprises at least one of a hydroxylbenzoic acid claim ...

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Номер записи: 78
28-01-2016 дата публикации

POLISHING AGENT, POLISHING METHOD AND ADDITIVE LIQUID FOR POLISHING

Номер: US20160024351A1
Автор: OTSUKl Toshihiko, SUZUKI Masaru, Takagi Nobuyuki, YOSHIDA Iori
Принадлежит: Asahi Glass Company, Limited

A polishing agent includes a particle of a metal oxide, a water-soluble polyamide, an organic acid and water. The water-soluble polyamide has a tertiary amino group and/or an oxyalkylene chain in a molecule thereof. The polishing agent has a pH of 7 or less. 1. A polishing agent , comprising a particle of a metal oxide , a water-soluble polyamide having a tertiary amino group and/or an oxyalkylene chain in a molecule thereof , an organic acid and water , and having a pH of 7 or less.2. The polishing agent according to claim 1 , wherein the water-soluble polyamide has the tertiary amino group in a main chain thereof and/or a side chain thereof.3. The polishing agent according to claim 1 , wherein the water-soluble polyamide has the oxyalkylene chain in a main chain thereof.4. The polishing agent according to claim 1 , wherein the water-soluble polyamide is a copolymer obtained from: aminoethylpiperazine and/or a modified polyalkylene glycol; and a lactam.5. The polishing agent according to claim 1 , wherein the metal oxide is a cerium oxide.6. The polishing agent according to claim 1 , wherein the organic acid is at least one selected from the group consisting of tetrahydrofuran-2-carboxylic acid claim 1 , pyrrolidone carboxylic acid claim 1 , 2-hydroxyisobutyric acid claim 1 , N-acetylglycine claim 1 , 2-furancarboxylic acid claim 1 , iminodiacetic acid and levulinic acid.7. The polishing agent according to claim 1 , wherein a content of the water-soluble polyamide is 0.0001 mass % or more and 1 mass % or less.8. The polishing agent according to claim 1 , wherein a content of the organic acid is 0.005 mass % or more and 2.0 mass % or less.9. The polishing agent according to claim 1 , wherein the pH is 3 or more and 6 or less.10. The polishing agent according to claim 1 , wherein an average particle diameter of the particle of the metal oxide is 0.01 μm or more and 0.5 μm or less.11. The polishing agent according to claim 1 , wherein a content of the particle of the ...

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Номер записи: 79
22-01-2015 дата публикации

Coating compositions having chelant functionality

Номер: US20150025177A1
Автор: Afia Sarpong KARIKARI, Theodore Tysak
Принадлежит: Rohm and Haas Co

The present invention provides a floor coating composition comprising (A) and aqueous solvent; and (B) a chelating polymer which comprises units derived from one or more aminocarboxylate compounds or their salts, one or more other polymerizable monomers, one or more ethylenically unsaturated monomers and, optionally, one or more crosslinking monomers. For example, the aminocarboxylate compounds or their salts may be one or more of iminodiacetic acid (IDA), iminodisuccinic acid (IDS), ethylenediamine triacetic acid (ED3A) and ethylenediamine disuccinic acid (EDDS), or their salts. Suitable polymerizable monomers may be one or more of glycidyl methacrylate (GMA), allyl glycidyl ether (AGE), vinylbenzyl chloride (VBC), allyl bromide, and their derivatives.

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Номер записи: 80
28-01-2021 дата публикации

COMPOSITIONS FOR TEMPORARILY ENHANCING THE LUSTER AND BRILLIANCE OF JEWELRY AND GEM STONES AND METHODS FOR MAKING AND USING SAME

Номер: US20210022462A1
Автор: Ashley Brooke, Ashley Paul
Принадлежит:

Compositions for enhancing the luster and/or brilliance of jewelry and/or gem stones comprising a non-aqueous carrier and optionally additives and/or fragrances, and methods for making and using same. 1. A composition comprising:100 vol. % of a non-aqueous carrier comprising one or more one or more fatty acids, one or more glycerides, one or more essential oils, one or more hydrocarbons, one or more petroleum oils, or mixtures thereof.2. The composition of claim 1 , further comprising:between about 0.01 wt. % or vol. % and about 5 wt. % or vol. % of a solid or liquid fragrance based on 100 vol. % of the carrier and/orbetween about 0.01 wt. % or vol. % and about 5 wt. % or vol. % of one or more phospholipids, one or more amphoteric glycinates, one or more amphoteric imidazolines, one or more amphoteric propionates, one or more other amphoteric agents, one or more anionic surfactants, one or more cationic surfactants, one or more non-ionic surfactants, one or more zwitterionic surfactants, or mixtures thereof based on 100 vol. % of the carrier.3. The composition of claim 1 , wherein the carrier comprises:100 vol. % of the one or more one or more fatty acids,between about 0.01 wt. % or vol. % and about 5 wt. % or vol. % of a solid or liquid fragrance based on 100 vol. % of the carrier, andbetween about 0.01 wt. % or vol. % and about 5 wt. % or vol. % of one or more phospholipids, one or more amphoteric glycinates, one or more amphoteric imidazolines, one or more amphoteric propionates, one or more other amphoteric agents, one or more anionic surfactants, one or more cationic surfactants, one or more non-ionic surfactants, one or more zwitterionic surfactants, or mixtures thereof based on 100 vol. % of the carrier.4. The composition of claim 1 , wherein the carrier comprises:100% of the one or more glycerides,between about 0.01 wt. % or vol. % and about 5 wt. % or vol. % of a solid or liquid fragrance based on 100 vol. % of the carrier, andbetween about 0.01 wt. % or ...

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Номер записи: 81
10-02-2022 дата публикации

Silicon Etching Liquid

Номер: US20220041931A1
Автор: OSHIO Manami, SEIKE Yoshiki, Tono Seiji
Принадлежит: TOKUYAMA CORPORATION

An etching solution contains a quaternary ammonium compound as a main component, by which an etching rate for silicon is improved, no adhered substances are formed on an etching surface during etching, and the etching rate does not decrease even after continuous use for a long time. The silicon etching solution contains a phenol compound represented by the following Formula (1), a quaternary ammonium compound, and water, and has a pH of 12.5 or more. 2. The silicon etching solution according to claim 1 , wherein a concentration of the quaternary ammonium compound is 1 mass % to 50 mass % claim 1 , and a concentration of the phenol compound represented by the Formula (1) is 0.05 mass % to 20 mass %.3. A method for manufacturing a silicon device claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'etching a silicon wafer, a polysilicon film, or an amorphous silicon film, wherein the etching is performed using the silicon etching solution according to .'} The present invention relates to a silicon etching solution used in surface processing and etching steps when manufacturing various silicon devices.Silicon has been applied to various fields by utilizing excellent mechanical properties, and electrical properties including a low resistance, relatively high stability compared with other metals, and less restrictions on a post-treatment thereof. By utilizing the mechanical properties, silicon has been applied to valves, nozzles, printer heads, and semiconductor sensors for detecting various physical quantities such as a flow rate, a pressure, and an acceleration (for example, a diaphragm of a semiconductor pressure sensor or a cantilever of a semiconductor acceleration sensor). By utilizing the electrical properties, silicon has been applied to various devices as a material for a part of a metal wiring, a gate electrode, and the like. Such various silicon devices are required to be highly integrated, miniaturized, highly sensitive, and highly ...

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Номер записи: 82
28-01-2016 дата публикации

Method for chemical mechanical polishing substrates containing ruthenium and copper

Номер: US20160027663A1
Автор: Ching-Hsun Chao, Hongyu Wang, Jiun-Fang Wang, Lee Melbourne Cook
Принадлежит: Rohm and Haas Electronic Materials CMP Holdings Inc

A method for chemical mechanical polishing of a substrate comprising ruthenium and copper.

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Номер записи: 83
23-01-2020 дата публикации

COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD USING COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

Номер: US20200024547A1
Автор: ISHIDA Yasuto, ONISHI SHOGO, YOSHINO Tsutomu, Yoshizaki Yukinobu
Принадлежит: FUJIMI INCORPORATED

An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. 1. A composition for surface treatment comprising:a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphonic acid (salt) group, and an amino group; andwater, whereinpH is less than 7, and [{'br': None, '[Mathematical Formula 1]'}, {'br': None, 'Ionic functional group density (%)=100×(Number of constituent unit derived from monomer having ionic functional group/Number of constituent unit derived from polymer compound) \u2003\u2003Formula (1)'}], 'the polymer compound has a pKa of 3 or less and an ionic functional group density represented by the following formula (1)of more than 10%.2. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a copolymer comprising a constituent unit having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group and an amino group and another constituent unit.3. The composition for surface treatment according to claim 2 , wherein the other constituent unit comprises a constituent unit derived from an ethylenically unsaturated monomer.4. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a homopolymer consisting of only a constituent unit having at least one acid functional group selected from the group consisting of a sulfonic acid (salt) group claim 1 , a phosphoric acid (salt) group claim 1 , and a phosphonic acid (salt) group.5. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a polymer compound having a sulfonic acid (salt) group.6. The composition for surface treatment according to claim 5 , wherein a polymer compound having the sulfonic acid (salt) group is at least one ...

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Номер записи: 84
24-01-2019 дата публикации

PLASMA ETCHING METHOD

Номер: US20190027368A1
Автор: MATSUURA Go
Принадлежит: ZEON CORPORATION

A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I). 2. The plasma etching method according to claim 1 , whereina mixing ratio of the hydrofluoroether gas in the processing gas is at least 1 part by volume and not more than 100 parts by volume relative to 100 parts by volume of the fluorocarbon gas.3. The plasma etching method according to claim 1 , wherein{'sub': 2', '6', '3', '6', '3', '8', '4', '6', '4', '8', '5', '8, 'the fluorocarbon gas is a gas of a compound represented by a compositional formula CF, CF, CF, CF, CF, or CF.'}4. The plasma etching method according to claim 1 , wherein{'sub': 4', '3', '7, 'the hydrofluoroether gas is a gas of a compound represented by a compositional formula CHFO.'} The present disclosure relates to a plasma etching method and, in particular, relates to a method for selectively plasma etching a silicon oxide film.In semiconductor device manufacturing, plasma etching using a processing gas may be carried out in fine processing of a thin film formed on a workpiece. The thin film may, for example, be a silicon compound film such as a silicon nitride film or a silicon oxide film, or may be an organic film having carbon as a main component that is formed from amorphous carbon, a photoresist composition, or the like. Of these examples, in a case in which a silicon oxide film is an etching processing target, it is necessary to selectively etch the processing target silicon oxide film relative to a non-processing target film formed on the same workpiece, such as a silicon nitride film or an organic film. In other words, it is necessary to increase the selectivity in etching.For this reason, various processing gases for plasma etching have previously been proposed with the aim of sufficiently increasing selectively in etching, and enabling sufficiently selective and efficient etching of a processing target (for example, ...

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Номер записи: 85
28-01-2021 дата публикации

METAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME AND METAL WIRE AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Номер: US20210028024A1
Автор: KIM Do Yoon, TAKAI Kenji, Yoon Boun
Принадлежит:

A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same. 1. A method of manufacturing a metal structure , the method comprising:forming a metal layer comprising a metal and a nano-abrasive, the nano-abrasive having an average particle diameter of less than 5 nanometers, andsupplying slurry on the metal layer to perform chemical mechanical polishing.2. The method of claim 1 , wherein the slurry does not comprise an abrasive having an average particle diameter of greater than or equal to about 3 nanometers.3. The method of claim 1 , wherein the slurry is an abrasive-free slurry.4. The method of claim 1 , wherein the slurry comprises an amino acid or a derivative thereof.5. The method of claim 1 , wherein the nano-abrasive comprises a carbon abrasive.6. The method of claim 5 , wherein the carbon abrasive comprises fullerene or a derivative thereof claim 5 , graphene claim 5 , graphite claim 5 , a carbon nanotube claim 5 , a carbon dot claim 5 , or a combination thereof.7. The method of claim 1 , wherein the metal comprises copper claim 1 , silver claim 1 , gold claim 1 , aluminum claim 1 , calcium claim 1 , zinc claim 1 , tungsten claim 1 , iron claim 1 , tin claim 1 , platinum claim 1 , nickel claim 1 , or a combination thereof.8. The method of claim 1 , wherein the forming of the metal layer comprises:preparing an electrodeposition coating solution comprising a metal salt, the nano-abrasive, and a solvent, anddisposing a substrate comprising a conductive layer and an opposite electrode in the electrodeposition coating solution and performing electrodeposition by applying a current between the conductive layer and the ...

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Номер записи: 86
04-02-2016 дата публикации

Chemical mechanical polishing of alumina

Номер: US20160032461A1
Автор: Arul Chakkaravarthi Arjunan, Deepika Singh, Kannan Balasundaram, Rajiv K. Singh, Wei Bai
Принадлежит: SINMAT Inc, University of Florida Research Foundation Inc

A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m 2 /gm mixed with another oxide particle type having an average area per unit mass >150 m 2 /gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

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Номер записи: 87
30-01-2020 дата публикации

Chemical Mechanical Planarization Of Films Comprising Elemental Silicon

Номер: US20200032108A1
Автор: Dnyanesh Chandrakant Tamboli, Hongjun Zhou, James Matthew Henry, Joseph Rose, Krishna P. Murella
Принадлежит: Versum Materials US LLC

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

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Номер записи: 88
31-01-2019 дата публикации

Polishing Slurries for Polishing Semiconductor Wafers

Номер: US20190035675A1
Автор: HUI Wang, James Raymond Capstick, Tracy Michelle Ragan, Vandan Tanna
Принадлежит: GlobalWafers Co Ltd

Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.

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Номер записи: 89
09-02-2017 дата публикации

CMP POLISHING AGENT, METHOD FOR MANUFACTURING THEREOF, AND METHOD FOR POLISHING SUBSTRATE

Номер: US20170037290A1
Автор: Takahashi Mitsuhito
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent. 18-. (canceled)9. A CMP polishing agent , comprising polishing particles , a protective film-forming agent , and water , whereinthe protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less.10. The CMP polishing agent according to claim 9 , wherein the polishing particles are wet ceria particles.11. The CMP polishing agent according to claim 9 , wherein the copolymer of styrene and acrylonitrile is contained in an amount of 0.1 part by mass or more and 5 parts by mass or less on the basis of 100 parts by mass of the polishing particles.12. The CMP polishing agent according to claim 10 , wherein the copolymer of styrene and acrylonitrile is contained in an amount of 0.1 part by mass or more and 5 parts by mass or less on the basis of 100 parts by mass of the polishing particles.13. The CMP polishing agent according to claim 9 , wherein the pH is 3 or more and 7 or less.14. The CMP polishing agent according to claim 10 , wherein the pH is 3 or more and 7 or less.15. The CMP polishing agent according to claim 11 , wherein the pH is 3 or more and 7 or less.16. The CMP polishing agent according to claim 12 , wherein the pH is 3 or more and 7 or less.17. The CMP polishing agent according to claim 9 , wherein the CMP polishing agent is a CMP polishing agent for polishing an ...

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Номер записи: 90
11-02-2016 дата публикации

Etching liquid, etching method, and method of manufacturing solder bump

Номер: US20160042993A1
Автор: Akira Susaki, Keiichi Kurashina
Принадлежит: Ebara Corp

An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

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Номер записи: 91
01-05-2014 дата публикации

TREATMENT OF SHAPED BODIES COMPRISING COPPER WITH A MIXTURE COMPRISING CHLORINE-FREE ACIDS AND OXIDIZING AGENT

Номер: US20140121145A1
Автор: PAASCHE Thomas, URCH Henning
Принадлежит: BASF SE

A process for treatment of shaped bodies comprising copper, wherein an aqueous mixture (M) comprising (a.) chlorine-free acids without carboxyl groups, (b.) oxidizing agents, (c.) aqueous solvent and optionally additional additives is contacted with the shaped body. Another characteristic feature of the process is that the aqueous mixture (M) after the etching or pickling additionally comprises (e.) dissolved copper and is separated from the solid. Also encompassed is a process for workup of the aqueous mixture (M) which has been separated and additionally comprises dissolved copper by electrolysis. Further provided are mixtures (MI) comprising (a.) from 10 to 40% by weight of methanesulfonic acid, (b.) from 10 to 20% by weight of hydrogen peroxide and (c.) from 40 to 80% by weight of water, and the use thereof for etching or pickling of shaped bodies comprising copper. 1. A process for treating a shaped body , the process comprising: contacting an aqueous mixture with the shaped body ,wherein:the shaped body comprises copper, andthe aqueous mixture comprises(a) a chlorine-free acid without carboxyl groups,(b) an oxidizing agent, and(c) an aqueous solvent.2. The process according to claim 1 , wherein the aqueous mixture further comprises(d) an additional additive.3. The process according to claim 1 , wherein the aqueous mixture comprisesfrom 10 to 40% by weight of the chlorine-free acid without carboxyl groups (a),from 1 to 50% by weight of the oxidizing agent (b),from 10 to 89% by weight of the aqueous solvent (c), andfrom 0 to 10% by weight of an additional additives (d),based on a total amount of components (a), (b), (c), and (d).4. The process according to claim 1 , wherein the aqueous mixture has a pH of from −0.5 to 5.5. The process according to claim 1 , wherein the copper is present at least partly on at least one surface of the shaped body and is contacted with the aqueous mixture.6. The process according to claim 1 , wherein the shaped body is a printed ...

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Номер записи: 92
06-02-2020 дата публикации

Structure and Formation Method of Semiconductor Device with Conductive Feature

Номер: US20200043786A1
Автор: Chang Tang-Kuei, Chen Kei-Wei, Lee Chia Hsuan, Lin Jian-Ci, Wei Kuo-Hsiu, Wu Li-Chieh
Принадлежит:

A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material. 1. A method for forming a semiconductor device structure , comprising:forming a conductive feature over a semiconductor substrate;forming a dielectric layer over the conductive feature;forming an opening in the dielectric layer to expose the conductive feature;forming a conductive material to overfill the opening; andthinning the conductive material using a chemical mechanical polishing process, wherein a slurry used in the chemical mechanical polishing process comprises an iron-containing oxidizer that oxidizes a portion of the conductive material.2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein a weight percentage of the iron-containing oxidizer in the slurry is in a range from about 0.1% to about 2%.3. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the iron-containing oxidizer comprises ferric nitrate.4. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the slurry has a pH value in a range from about 2 to about 4.5. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the slurry comprises an inhibitor claim 1 , and the inhibitor comprises a carbon chain having a carbon number in a range from 10 to 1000.6. The method for forming a semiconductor device structure ...

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Номер записи: 93
03-03-2022 дата публикации

METHOD FOR DEPOSITING ABRASIVE PARTICLES

Номер: US20220063060A1
Автор: Eckel Joseph B., Jendrejack Richard M., Nienaber Aaron K.
Принадлежит:

The disclosure relates to, among other things, a method of making a coated abrasive article, the method comprising sequentially: locating a plurality of shaped abrasive particles in a tool comprising a plurality of cavities, wherein the plurality of shaped abrasive particles is held in the plurality of cavities, at least in part, electrostatically; and disposing the plurality of shaped abrasive particles onto a make layer precursor of a backing having first and second opposed major surfaces, wherein the make layer precursor is disposed on at least a portion of the first major surface.

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Номер записи: 94
03-03-2022 дата публикации

Polishing composition, concentrated liquid thereof, and polishing method using the same

Номер: US20220064486A1
Автор: Yoshihiro Izawa
Принадлежит: Fujimi Inc

An object of the present invention is to provide a means for reducing the surface roughness (Ra) and suppressing occurrence of scratches while maintaining a high polishing rate in polishing an object to be polished containing a resin. Provided is a polishing composition including particulate alumina and a dispersing medium, in which an α conversion rate of the particulate alumina is 50% or more, and a sphericity of the particulate alumina is 80% or more.

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Номер записи: 95
03-03-2022 дата публикации

POLISHING SLURRY COMPOSITION

Номер: US20220064488A1
Автор: CHOI Nak Hyun, CHOI Soo Wan, Kim Jung Yoon, YANG Hae Won
Принадлежит: KCTECH CO., LTD.

The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

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Номер записи: 96
03-03-2022 дата публикации

POLISHING SLURRY COMPOSITION

Номер: US20220064489A1
Автор: CHOI Nak Hyun, CHOI Soo Wan, Kim Jung Yoon, YANG Hae Won
Принадлежит: KCTECH CO., LTD.

The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

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Номер записи: 97
03-03-2022 дата публикации

POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD

Номер: US20220064490A1
Автор: KAMIMURA Tetsuya
Принадлежит: FUJIFILM Corporation

The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the C log P value of the passivation film forming agent from the C log P value of the anionic surfactant is more than 2.00 and less than 8.00, a mass ratio of a content of potassium to a content of sodium is 1×10to 1×10, and the pH is 8.0 to 10.5. 2. The polishing liquid according to claim 1 ,wherein a mass ratio of a content of the passivation film forming agent to a content of the anionic surfactant is 0.01 or more and less than 100.3. The polishing liquid according to claim 1 ,wherein a corrosion potential of cobalt in the polishing liquid is −0.2 to 0.5 V.4. The polishing liquid according to claim 1 ,wherein the organic acid is one or more selected from the group consisting of citric acid, maleic acid, succinic acid, 1-hydroxyethane-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid.5. The polishing liquid according to claim 1 ,wherein a content of the colloidal silica is 2.0% by mass or more with respect to a total mass of the polishing liquid, andthe colloidal silica has an average primary particle diameter of 5 nm or more.6. The polishing liquid according to claim 1 , further ...

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Номер записи: 98
14-02-2019 дата публикации

Method for Purifying Fluorine Gas

Номер: US20190047858A1
Автор: ETO Jun, OOYA Kohei, Takeda Yuta, Yao Akifumi
Принадлежит: CENTRAL GLASS COMPANY, LIMITED

Disclosed is a purification method for removing a metal component from a fluorine gas containing hydrogen fluoride and a metal component. This method includes a removing step for removing the hydrogen fluoride and the metal component therefrom by bringing the fluorine gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride. The content of the hydrogen fluoride in the fluorine gas before the removing step is 50 volume ppm to 1 volume %, relative to the total volume of the fluorine gas, the hydrogen fluoride and the metal component. The metal fluoride is preferably an alkali metal fluoride or an alkali earth metal fluoride. Surprisingly, the presence of hydrogen fluoride in a fluorine gas makes it possible to remove a metal component therefrom as an impurity as a result of adsorption thereof by a metal fluoride. 1. A method for purifying a fluorine gas by removing a metal component from a fluorine gas that contains hydrogen fluoride and the metal component , the method comprising the step of:removing the hydrogen fluoride and the metal component by bringing the fluorine gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride,wherein the content of the hydrogen fluoride in the fluorine gas before the removing step is 50 volume ppm or greater to 1 volume % or less, relative to a total volume of the fluorine gas, the hydrogen fluoride and the metal component.2. The method for purifying the fluorine gas according to claim 1 , wherein before the removing step claim 1 , a concentration adjusting step is performed for adjusting a content of the hydrogen fluoride contained in the fluorine gas to be 50 volume ppm or greater to 1 volume % or less claim 1 , relative to a total volume of the fluorine gas claim 1 , the hydrogen fluoride and the metal component.3. The method for purifying the fluorine gas according to claim 2 , wherein the ...

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Номер записи: 99
25-02-2016 дата публикации

SHAPED ABRASIVE PARTICLES AND METHODS OF FORMING SAME

Номер: US20160053151A1
Автор: Barnes Martin, Bauer Ralph, Demers Rene G., Skowron Margaret L.
Принадлежит:

A method of forming a shaped abrasive particle includes applying a mixture into a shaping assembly within an application zone and directing an ejection material at the mixture in the shaping assembly under a predetermined force, removing the mixture from the shaping assembly and forming a precursor shaped abrasive particle. 1. A batch of shaped abrasive particles including a first portion comprising a shaped abrasive particle having a tortuous contour extending along at least a portion of a first major surface.2. The batch of claim 1 , wherein the tortuous contour comprises a first planar portion claim 1 , a second planar portion claim 1 , and a curved portion joining the first planar portion and the second planar portion.3. The batch of claim 1 , wherein the tortuous contour comprises a first curved portion claim 1 , a second curved portion claim 1 , and a planar portion joining the first curved portion and the second curved portion.4. The batch of claim 3 , wherein the first curved portion defines a substantially convex curvature and the second curved portion is spaced apart from the first curved portion and defines a substantially concave portion.5. The batch of claim 3 , wherein the first curved portion and the second curved portion define different radiuses of curvature compared to each other.6. The batch of claim 1 , wherein the shaped abrasive particle comprises a body claim 1 , and wherein the tortuous contour defines a waviness having a first curved portion extending above a line that extends between a first corner and a second corner of the body claim 1 , and further comprising a second curved portion extending below the line.7. The batch of claim 6 , wherein the first curved portion extends above the line for a peak height of at least about 5% of an average height of the particle and wherein the second curved portion extends below the line for a valley height of at least about 5% of an average height of the particle.8. The batch of claim 1 , wherein the ...

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Номер записи: 100