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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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12-07-2019 дата публикации

Оснастка подложкодержателя для нанесения контактов на гетероструктурные солнечные элементы

Номер: RU0000190811U1
Автор: Илья Александрович Няпшаев, Михаил Александрович Денисов
Принадлежит: Общество С Ограниченной Ответственностью "Нтц Тонкопленочных Технологий В Энергетике", Общество с ограниченной ответственностью "Хевел"

Обеспечивается одиночная загрузка гетероструктурных солнечных элементов в магнетронные системы орбитального типа с небольшой производительностью. Техническим результатом является недопущение осаждения материала мишени на край или торец гетероструктурного солнечного элемента, недопыления материала мишени в местах, близких к изоляционной кромке гетереструктурного солнечного элемента, обеспечение низкого веса оснастки. Оснастка подложкодержателя содержит в целом прямоугольные сплошной держатель и маску. На фронтальной стороне маски и на тыльной стороне держателя выполнены заглубления под клипсы, скрепляющие маску и держатель. Держатель и маска выполнены со скруглениями по их контурам и имеют скошенные углы. Маска содержит внутреннюю наклонную стенку. На тыльной стороне маски выполнена выемка, ограниченная внутренней вертикальной стенкой и внутренней горизонтальной стенками, образующая посадочное место для гетероструктурного солнечного элемента. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 190 811 U1 (51) МПК C23C 14/04 (2006.01) C23C 14/35 (2006.01) C23C 14/50 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК C23C 14/04 (2019.05); C23C 14/35 (2019.05); C23C 14/50 (2019.05) (21)(22) Заявка: 2018127547, 26.07.2018 (24) Дата начала отсчета срока действия патента: 12.07.2019 Приоритет(ы): (22) Дата подачи заявки: 26.07.2018 (45) Опубликовано: 12.07.2019 Бюл. № 20 2539487 C2, 20.01.2015. RU 2437964 C2, 27.12.2011. RU 2308538 C1, 20.10.2007. JP 2009161817 A, 23.07.2009. (54) Оснастка подложкодержателя для нанесения контактов на гетероструктурные солнечные элементы (57) Реферат: Обеспечивается одиночная загрузка маску. На фронтальной стороне маски и на гетероструктурных солнечных элементов в тыльной стороне держателя выполнены магнетронные системы орбитального типа с заглубления под клипсы, скрепляющие маску и небольшой производительностью. Техническим держатель. Держатель и маска выполнены со результатом является ...

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Номер записи: 1
09-09-2019 дата публикации

Вакуумная установка для нанесения тонкопленочных покрытий на подложку

Номер: RU0000192228U1
Автор: Евгений Александрович ХОХЛОВ, Константин Евгеньевич Мясников, Синг-Люнг Лин
Принадлежит: Общество С Ограниченной Ответственностью "Изовак Технологии"

Полезная модель относится к области технологического оборудования для нанесения покрытий, а именно к вакуумному технологическому оборудованию, предназначенному для нанесения тонкопленочных покрытий с заданными оптическими, электрическими и другими характеристиками.Разработана вакуумная установка для нанесения тонкопленочных покрытий, включающая по меньшей мере одну технологическую камеру, установленную на каркасе и снабженную технологическими устройствами, и по меньшей мере одну шлюзовую камеру, установленную на транспортной системе, выполненной с возможностью обеспечения перемещения шлюзовой камеры из позиции загрузки/выгрузки в рабочую позицию под технологической камерой, подложкодержатель для размещения на нем подложки для нанесения тонкопленочного покрытия, выполненный с возможностью вращения вокруг своей оси, устройство подачи для перемещения подложкодержателя из шлюзовой камеры в технологическую камеру, вакуумный затвор, расположенный между камерами и выполненный с возможностью разделения внутреннего объема шлюзовой и технологической камер, устройство стыковки технологической и шлюзовой камер, при этом в верхней части технологической камеры установлен захват, выполненный с возможностью обеспечения фиксации подложкодержателя во внутреннем объеме технологической камеры и его вращения вокруг своей оси во время обработки поверхности подложки.Таким образом, разработана вакуумная установка для нанесения тонкопленочных покрытий, конструкция которой позволяет обеспечить достижение технического результата, заключающегося в сокращении времени осуществления технологического процесса, а также в повышении качества получаемого тонкопленочного покрытия. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 192 228 U1 (51) МПК C23C 14/24 (2006.01) C23C 14/50 (2006.01) C23C 14/56 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК C23C 14/24 (2019.02); C23C 14/50 (2019.02); C23C 14/56 (2019.02) (21)(22) Заявка: 2018142966, 04.12. ...

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Номер записи: 2
02-02-2012 дата публикации

Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture

Номер: US20120024380A1
Автор: Mark Jeffrey Pavol, Scott Daniel Feldman-Peabody
Принадлежит: Primestar Solar Inc

Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride.

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Номер записи: 3
02-02-2012 дата публикации

Radiation image conversion panel and method for producing same

Номер: US20120025102A1
Автор: Kazuhiro Shirakawa, Masanori Yamashita, Munenori Shikida, Shintaro Toyama, Yutaka Kusuyama
Принадлежит: Hamamatsu Photonics KK

In a radiation image conversion panel ( 10 ), a radiation conversion layer ( 2 ) for converting an incident radiation into light is formed on a substrate ( 1 ). The radiation conversion layer ( 2 ) has a reflective layer ( 3 ), on a side opposite from a light exit surface ( 2 a ) for emitting the light, for reflecting the light to the exit surface ( 2 a ) side, while the reflective layer ( 3 ) has a helical structure comprising helically stacked phosphor crystals. Thus constructed radiation image conversion panel ( 10 ) can enhance the reflectance without forming a reflective layer made of a thin metal film or the like and exhibit a reflectance higher than that in the case where the reflective layer is formed by spherical crystal particles.

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Номер записи: 4
09-02-2012 дата публикации

Reactive sputtering with multiple sputter sources

Номер: US20120031749A1
Автор: Hartmut Rohrmann, Kurt Ruhm, Martin Dubs
Принадлежит: OC OERLIKON BALZERS AG

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

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Номер записи: 5
16-02-2012 дата публикации

Coating, article coated with coating, and method for manufacturing article

Номер: US20120040163A1
Автор: Cheng-Shi Chen, Hsin-Pei Chang, Huann-Wu Chiang, Wen-Rong Chen, Zhi-Jie Hu
Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A coating includes a zirconium yttrium carbon-nitride layer including a first surface and an opposite second surface, the atomic carbon content and the atomic nitrogen content in the zirconium yttrium carbon-nitride layer gradually increasing from the first surface to the second surface.

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Номер записи: 6
23-02-2012 дата публикации

Coating device

Номер: US20120042824A1
Автор: Chung-Pei Wang
Принадлежит: Hon Hai Precision Industry Co Ltd

A coating device includes a main body, a transport device, at least one loader, a driving device. The main body has a top plate, a bottom plate, and a pair of sidewalls connecting the top plate and bottom plate. The sidewalls respectively define an input gate and an output gate. The transport device includes a transport track passing through the input gate and the output gate, and at least one lifting arm mounted on the transport track. Each loader is configured for loading workpieces and includes a rotary shaft, at least one loading frame rotatably connected with the rotary shaft. The driving device is mounted on the top plate. Each lifting arm is configured for clamping a corresponding loader and transporting the corresponding loader to engage with the driving device. The driving device rotates the corresponding loader rotary shaftthrough the rotary shaft of the corresponding loader.

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Номер записи: 7
08-03-2012 дата публикации

Target for sputtering

Номер: US20120055788A1
Автор: Atsushi Ota, Hirohisa Takahashi, Noriaki Tani, Sadayuki Ukishima, Satoru Ishibashi
Принадлежит: Ulvac Inc

A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al 2 O 3 and TiO 2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.

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Номер записи: 8
15-03-2012 дата публикации

Metal pattern formation system

Номер: US20120060708A1
Автор: Chien-Ho Huang, Ching-Yu Tso, Hsiou-Jeng Shy, Li-Jiuan Chen, Shang-Wanq Yeh
Принадлежит: Individual

The invention discloses a metal pattern formation system produced in the following steps: an organic liquid is first printed on a substrate to form a base pattern. A metal is then evaporated to generate several metal particles for covering the printed substrate. At last, the substrate is heated to vaporize the base pattern, and the metal particles adhered to the substrate forms a metal pattern complementary to the base pattern.

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Номер записи: 9
15-03-2012 дата публикации

Ito-coated article for use with touch panel display assemblies, and/or method of making the same

Номер: US20120064234A1
Автор: Alexey Krasnov
Принадлежит: Guardian Industries Corp

Certain example embodiments of this invention relate to techniques for making a coated article including a transparent conductive indium-tin-oxide (ITO) film supported by a heat treated glass substrate. A substantially sub-oxidized ITO or metallic indium-tin (InSn) film is sputter-deposited onto a glass substrate at room temperature. The glass substrate with the as-deposited film thereon is subjected to elevated temperatures. Thermal tempering or heat strengthening causes the as-deposited film to be transformed into a crystalline transparent conductive ITO film. Advantageously, this may reduce the cost of touch panel assemblies, e.g., because of the higher rates of the ITO deposition in the metallic mode. The cost of touch-panel assemblies may be further reduced through the use of float glass.

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Номер записи: 10
19-04-2012 дата публикации

Thin film depositing apparatus

Номер: US20120090543A1
Автор: Woo-Seok Cheong
Принадлежит: Electronics and Telecommunications Research Institute ETRI

Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber.

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Номер записи: 11
10-05-2012 дата публикации

Cooled pvd shield

Номер: US20120111273A1
Автор: Akihiro Hosokawa, Bradley O. Stimson, Hienminh Huu Le, Makoto Inagawa
Принадлежит: Individual

The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

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Номер записи: 12
17-05-2012 дата публикации

Wear resistant coating for brake disks with unique surface appearance and methods for coating

Номер: US20120118686A1
Автор: Nathan K. Meckel
Принадлежит: Tech M3 Inc

A brake disk including carbon steel, stainless steel or a ceramic composite material and coated with a coating material that is wear and corrosion resistant and when applied properly allows for the coated surface to have a variety of “textured” appearances. For example, the coated surface can be made to look like woven carbon fiber. The aesthetically pleasing, wear and corrosion resistant coating overlays wear surfaces and portions of the brake disk that will be, in many cases, visible when the brake disk is installed on the vehicle. The coating includes a first layer of a metal, such as a pure titanium metal, and a second layer that can include a Nitride, Boride, Carbide or Oxide of the metal used in the first layer. The coating can be applied using a physical vapor deposition source such as a cathodic arc source with a controlled gas atmosphere.

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Номер записи: 13
14-06-2012 дата публикации

Methods for depositing metal in high aspect ratio features

Номер: US20120149192A1
Автор: Alan Ritchie, Daniel J. Hoffman, John Pipitone, Karl Brown, Ying Rui
Принадлежит: Applied Materials Inc

Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

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Номер записи: 14
28-06-2012 дата публикации

Vacuum processing apparatus and processing method using the same

Номер: US20120160164A1
Автор: Kazuhiro Kameyama
Принадлежит: Canon Anelva Corp

A vacuum processing apparatus includes: a process chamber capable of reducing a pressure; a transport unit, provided in the process chamber, for transporting a plurality of substrates; a gas supply unit for supplying a gas to process the substrates in the process chamber; a substrate processing unit for processing the substrates placed on the transport unit; a detection unit for detecting a substrate interval between adjacent substrates out of the plurality of substrates; and a control unit for controlling, based on the substrate interval detected by the detection unit, a supply amount of the gas to be supplied by the gas supply unit.

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Номер записи: 15
28-06-2012 дата публикации

Target Cooling Device

Номер: US20120160670A1
Автор: Jan Arnaud Janssens, Jan Matthijn Dekkers, Joska Johannes Broekmaat
Принадлежит: Solmates Bv

The invention relates to a laser deposition device, comprising at least one target, a substrate arranged opposite of the at least one target and a laser for generating a laser beam, which beam is directed on the target, such that a plasma plume of target material is generated and is deposited onto the substrate, further comprising a base frame, a rotatable target frame with at least two target holders arranged in the base frame and at least one cooling device arranged to the base frame, which cooling device can be moved relative to the target frame to bring the cooling device in heat exchanging contact with the target frame.

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Номер записи: 16
12-07-2012 дата публикации

Arrangement for Holding a Substrate in a Material Deposition Apparatus

Номер: US20120178190A1
Автор: Andreas Lovich, Ansgar Fischer, Erwin Eiling, Johannes Krijne, Karl-Heinz Hohaus, Marc Philippens, Martin Mueller, Richard Scheicher, Wolfgang Goergen
Принадлежит: Individual

An arrangement ( 1 ) for holding a substrate ( 10 ) in a material deposition apparatus, which substrate ( 10 ) has a deposition side ( 10 a ) upon which material (M) is to be deposited, and which arrangement ( 1 ) comprises: a shadow mask ( 20 ) comprising a number of deposition openings (Di); a support structure ( 30 ) comprising a number of surround openings (Si); and a support structure holding means ( 6 ) for holding the support mask ( 30 ) and/or a substrate holding means ( 5 ) for holding the substrate ( 10 ), such that the support structure ( 30 ) is on the same side as the deposition side ( 10 a ) of the substrate ( 10 ), and the shadow mask ( 20 ) is positioned between the substrate ( 10 ) and the support structure ( 30 ) such that at least one deposition opening (Di) of the shadow mask ( 10 ) lies within a corresponding surround opening (Si) of the support structure ( 30 ).

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Номер записи: 17
26-07-2012 дата публикации

Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using thin film deposition apparatus

Номер: US20120186517A1
Автор: Chang-Soon Ji, Chengguo An, Jong-Woo Lee, Tae-Seung Kim
Принадлежит: Samsung Display Co Ltd

A thin film deposition apparatus to remove static electricity generated between a substrate and a mask, and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus.

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Номер записи: 18
02-08-2012 дата публикации

Substrate cooling device, sputtering apparatus and method for manufacturing electronic device

Номер: US20120193216A1
Автор: Einstein Noel Abarra, Tetsuya Endo
Принадлежит: Canon Anelva Corp

A substrate cooling device includes: a substrate holding stage including a recess defining a space between a substrate mounting unit and a substrate mounted on the substrate mounting unit; a holding member that exerts a pressing force against the substrate holding stage so as to fix the substrate to the substrate holding stage; a refrigerator connected to the substrate holding stage; a coolant gas inlet path including a coolant gas inlet opening that is provided at the substrate holding stage and opens to a recessed face of the recess, the coolant gas inlet path connecting a space in the recess via the coolant gas inlet opening to a coolant gas supply; and a coolant gas outlet path including a coolant gas outlet opening that is provided at the substrate holding stage independently of the coolant gas inlet opening and opens to the recessed face of the recess.

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Номер записи: 19
23-08-2012 дата публикации

Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates

Номер: US20120213933A1
Автор: Erten Eser, Shannon Fields
Принадлежит: Individual

A method of forming a metal-coated substrate having a CuInGaR 2 film on a surface of the metal coating is performed in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti. The method includes the steps of: providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and selenizing the precursor film; wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR 2 film.

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Номер записи: 20
23-08-2012 дата публикации

Method for producing indium tin oxide layer with controlled surface resistance

Номер: US20120213949A1
Автор: Chien-Min Weng, Feng-Shiang Yao, Fu-Jen Wang, Shih-Liang Chou, Tzu-Wen Chu
Принадлежит: Applied Vacuum Coating Technologies Co Ltd

The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity.

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Номер записи: 21
20-09-2012 дата публикации

Coater platter homing tool

Номер: US20120233870A1
Автор: James S. Rosenblatt
Принадлежит: Individual

An alignment tool is used to ensure proper alignment of a component on a rotating gear relative to a non-rotating platter. The alignment tool includes a first arm member coupled to a locating feature on the gear, and a second arm member that is coupled to the first arm member such that the second arm member is movable relative to the first arm member. When the first arm member is coupled to the locating feature, the second arm member locates off the platter to verify proper alignment. The second arm member is cannot be fitted to the platter when there is improper alignment.

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Номер записи: 22
20-09-2012 дата публикации

Method for producing polarizing element

Номер: US20120234046A1
Автор: Yoshitomo Kumai
Принадлежит: Seiko Epson Corp

A method for producing a polarizing element includes the steps of: forming an island-shaped film of a metal halide on a glass substrate; forming needle-shaped particles of the metal halide by stretching the glass substrate through heating to elongate the island-shaped film; and forming needle-shaped metal particles composed of a metal by reducing the metal halide of the needle-shaped particles, wherein the metal halide is deposited on the glass substrate by a reactive physical vapor deposition method.

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Номер записи: 23
04-10-2012 дата публикации

Ion implantation system and method

Номер: US20120252195A1
Автор: Barry Lewis Chambers, Edward E. Jones, Joseph D. Sweeney, Oleg Byl, Peng Zou, Robert Kaim, Sharad N. Yedave, Ying Tang
Принадлежит: Advanced Technology Materials Inc

An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

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Номер записи: 24
11-10-2012 дата публикации

Closed loop sputtering controlled to enhance electrical characteristics in deposited layer

Номер: US20120256155A1
Автор: Pragati Kumar, Prashant Phatak, Tony Chiang, Wayne French
Принадлежит: Intermolecular Inc

This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of an electrical property as a function of cathode voltage used during a sputtering process. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials, be fabricated to have minimal leakage or “off” current characteristics (I leak or I off , respectively) or a maximum ratio of “on” current to “off” current (I on /I off ).

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Номер записи: 25
01-11-2012 дата публикации

Tooling carrier for inline coating machine, method of operating thereof and process of coating a substrate

Номер: US20120276282A1
Автор: Manuel Campo, Uwe Hoffmann
Принадлежит: Applied Materials Inc

A process of coating at least one substrate with a plurality of deposition sources, a method of tooling, a carrier unit and a deposition system are described. The systems and methods provide for or allow for exposing a first substrate portion 112 a of said at least one substrate 112 to a first deposition source 118 a through an aperture 122 of a carrier unit 110, 510, depositing a first layer 126 a over the first substrate portion, said first layer including material from said first deposition source, varying a relative position between said at least one substrate and said aperture for exposing a second substrate portion of said at least one substrate, or another substrate, to a second deposition source, and depositing a second layer 126 b over the second substrate portion 112 b, said second layer including material from said second deposition source.

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Номер записи: 26
20-12-2012 дата публикации

Pinhole-Free Dielectric Thin Film Fabrication

Номер: US20120318664A1
Автор: Byung-Sung Leo Kwak, Chong JIANG
Принадлежит: Applied Materials Inc

A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

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Номер записи: 27
27-12-2012 дата публикации

Method and device for rapidly heating and cooling a substrate and immediately subsequently coating the same under vacuum

Номер: US20120328797A1
Автор: Berthold Ocker, Helmut John, Jürgen LANGER, Wolfram Maass
Принадлежит: Individual

The invention relates to a method for heating/cooling and coating a substrate in a vacuum chamber, comprising the following steps: (1) arranging the lower face of the substrate on a substrate holder, (2) lifting the substrate by a predefined distance relative to the substrate holder, and (3) heating the lifted substrate via its upper face by means of a heating device such as a radiant heating device, (4) coating the hot substrate, for example by moving it in or through a coating zone, (5) cooling the substrate by lowering it onto the chuck and (6) optionally further coating the cold substrate. The method according to the invention further enables process sequences to be executed, wherein various defined temperatures can be set on the substrate during each step, and optionally one or more coating processes can be executed immediately subsequently at said substrate temperature. Also included is the case, for example, that a substrate can be held at a higher temperature for a certain time immediately after a coating process (tempering).

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Номер записи: 28
03-01-2013 дата публикации

Film Formation Apparatus and Film Formation Method

Номер: US20130005054A1
Автор: Shunpei Yamazaki, Takeshi Nishi, Toshimitsu Konuma
Принадлежит: Semiconductor Energy Laboratory Co Ltd

There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.

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Номер записи: 29
17-01-2013 дата публикации

Target shield designs in multi-target deposition system.

Номер: US20130014700A1
Автор: Hariharakeshava Sarpangala Hegde
Принадлежит: NANO ETCH SYSTEMS Inc

A multi-target deposition arrangement comprising of a target assembly turret configured to be rotatable is provided. The arrangement also includes a plurality of targets mounted on the target assembly turret, wherein a first target is positioned in an operational position, which is facing a substrate during sputtering. The arrangement further includes a shield arrangement that includes at least a set of static shields and a set of dynamic shields. The set of static shields is attached to the target assembly turret. The set of dynamic shields is aligned with the set of static shields when the first target is rotated into the operational position for sputtering, wherein the shield arrangement prevents cross contamination to other targets when the sputtering is occurring to the first target.

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Номер записи: 30
24-01-2013 дата публикации

Film Forming Method and Method for Manufacturing Film-Formation Substrate

Номер: US20130022757A1
Автор: Hisao Ikeda, Satoshi Inoue, Tohru Sonoda, Tomoya Aoyama
Принадлежит: Sharp Corp

One embodiment of the present invention is a film forming method including the steps of forming an absorption layer 12 over one surface of a first substrate 11 ; forming a layer 16 containing a high molecular compound over the absorption layer; removing an impurity in the layer containing the high molecular compound by performing a first heat treatment on the layer 16 ; forming a material layer 18 containing a first film formation material and a second film formation material over the layer 16 ; performing a second heat treatment to form a mixed layer 19 in which the material layer and the layer 16 are mixed over the absorption layer; and performing third heat treatment to form a layer 19 a containing the first film formation material and the second film formation material on a film-formation target surface of a second substrate.

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Номер записи: 31
28-02-2013 дата публикации

Dynamic fluid valve and method for establishing the same

Номер: US20130052347A1
Автор: Pieter Tak, Valdimir Kuznetsov
Принадлежит: LEVITECH BV

A method, comprising: —providing a process space atmosphere at a process space atmosphere pressure; —providing an exterior atmosphere at an exterior atmosphere pressure that is different from the process space atmosphere pressure; —providing a passage via which the exterior atmosphere is in open communication with the process space atmosphere, and via which substrates are exchangeable between the exterior atmosphere and the process space atmosphere; —injecting an exchange fluid into the passage at at least one exchange fluid injection point, so as to effect a flow of exchange fluid that extends through at least a part of the passage, wherein said flow is directed towards—the exterior in case the exterior atmosphere pressure is greater than the process space atmosphere pressure; or—the process space in case the exterior atmosphere pressure is smaller than the process space atmosphere pressure.

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Номер записи: 32
14-03-2013 дата публикации

Method of deposition

Номер: US20130062194A1
Автор: Shoso Nishida
Принадлежит: Japan Steel Works Ltd

A method of deposition is provided in which a deposition operation can be immediately performed when a workpiece for deposition is carried into a deposition chamber irrespective of a shape or a structure of the workpiece for deposition. The workpiece for deposition is integrally molded with an assisting member, which is configured to maintain the workpiece for deposition in a predetermined orientation such that a deposition surface or a deposition portion thereof faces a target material when the workpiece for deposition is carried into a deposition chamber and is placed on a deposition stand, when the workpiece for deposition is injection-molded; and the workpiece for deposition is carried into the deposition chamber and is deposited.

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Номер записи: 33
04-04-2013 дата публикации

In-line deposition system and process for deposition of a thin film layer

Номер: US20130084669A1
Автор: Christopher Rathweg, Russell Weldon Black, Scott Daniel Feldman-Peabody
Принадлежит: Primestar Solar Inc

An apparatus for vapor deposition of a sublimated source material as a thin film on a substrate is provided. The apparatus includes a receptacle configured to hold a source material and a distribution plate positioned above the receptacle. The distribution plate defines a pattern of passages therethrough. The apparatus also includes a conveyor configured to travel in a continuous loop such that its transfer surface passes above the distribution plate in a first direction to receive thereon sublimated source material passing through the passages of the distribution plate. The conveyor is also configured to travel in a second direction while carrying a substrate on its raised edges. A heating system heats the conveyor while it travels in the second direction to transfer the source material from the transfer surface to the substrate. A process is provided for vapor deposition of a sublimated source material to form thin film.

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Номер записи: 34
18-04-2013 дата публикации

FILM-FORMING DEVICE AND FILM-FORMING METHOD

Номер: US20130092528A1
Автор: Fujii Yoshinori, Nakamura Shinya
Принадлежит: ULVAC, INC.

A film-forming device is provided, including: a chamber in which a substrate is disposed; a target, disposed within the chamber, which contains a material from which a film is formed; a substrate-supporting table disposed inside the chamber; driving unit that rotates the substrate-supporting table; a sputtering cathode that causes sputtered particles to be incident on the substrate from an oblique direction; and a control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time required to form a film having a desired thickness is an integer multiple of a rotation period of the substrate-supporting table. 1. A film-forming device comprising:a chamber in which a substrate is disposed, the substrate having a film to be formed thereon through sputtering film formation;a target, disposed within the chamber, which contains a material from which the film is formed;a substrate-supporting table disposed inside the chamber;a driving unit that rotates the substrate-supporting table;a sputtering cathode on which the target is mounted and which causes sputtered particles to be incident on the substrate on the substrate-supporting table from an oblique direction; anda control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time for which the substrate-supporting table is rotated at a predetermined rotation period is an integer multiple of a rotation period of the substrate-supporting table, the sputtering film formation time being required to form a film having a desired thickness.2. The film-forming device according to claim 1 , wherein the control unit controls the driving unit so that an acceleration time and a deceleration time during acceleration until a rotation period of the substrate-supporting table reaches a predetermined rotation period and during deceleration after termination of the film formation are equal to each other claim 1 , the acceleration time and the ...

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Номер записи: 35
09-05-2013 дата публикации

Deposition ring and electrostatic chuck for physical vapor deposition chamber

Номер: US20130112554A1
Автор: Keith A. Miller, Muhammad Rasheed, Rongjun Wang
Принадлежит: Applied Materials Inc

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

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Номер записи: 36
30-05-2013 дата публикации

FILM FORMING APPARATUS

Номер: US20130133571A1
Автор: FURUKAWA Shinji, SHIBAMOTO Masahiro
Принадлежит: ANELVA CORPORATION

The invention provides a multi-film forming apparatus including a substrate holder stock chamber for storing a plurality of substrate holders separately from a path in the multi-film forming apparatus, so that production can be performed without being affected by the process of removing a film accumulated on the surface of the substrate holder and the process of replacing the substrate holder, or by the process of removing a film accumulated on the surface of the substrate holder or the process of replacing the substrate holder, and hence high-throughput production is possible. A branch path is provided on the path of the multi-film forming apparatus, and a substrate holder stock chamber for storing a plurality of substrate holders which enables retrieval of the substrate holder from the path and feeding of the substrate holder to the path is provided. 1. A film forming apparatus comprising:a plurality of vacuum chambers;a path provided in the plurality of vacuum chambers;a plurality of substrate holders moving along the path in the vertical position;a drive unit for transferring the substrate holders; anda stock chamber which feeds the substrate holders to the path or retrieves the substrate holders from the path, and which is connected to one of the plurality of vacuum chambers, wherein the stock chamber includes a plurality of guide portions for supporting the substrate holders in the vertical position, a rotary table which includes the plurality of guide portions arranged radially and which connects predetermined one of the plurality of guide portions when the rotary table is rotated by a predetermined angle, and a transport unit for transporting the substrate holders between the path and the guide portions connected to the path.2. The film forming apparatus according to claim 1 , wherein the stock chamber comprises a degasificating unit.3. The film forming apparatus according to claim 1 , wherein the stock chamber is connected with a direction changing chamber ...

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Номер записи: 37
30-05-2013 дата публикации

Metal dewetting methods and articles produced thereby

Номер: US20130136894A1
Автор: Carme Gomex Carbonell, David Eugene Baker, David Francis Dawson-Elli, Lili Tian, Prantik Mazumder, Valerio Pruneri
Принадлежит: Corning Inc

Described herein are improved dewetting methods and improved patterned articles produced using such methods. The improved methods and articles generally implement continuous ultra-thin metal-containing films or film stacks as the materials to be dewetted. For example, a method can involve the steps of providing a substrate that has a continuous ultra-thin metal-containing film or film stack disposed on a surface thereof, and dewetting at least a portion of the continuous ultra-thin metal-containing film or film stack to produce a plurality of discrete metal-containing dewetted islands on the surface of the substrate.

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Номер записи: 38
30-05-2013 дата публикации

Method of generating high purity bismuth oxide

Номер: US20130136919A1
Автор: Guowen Ding, Hien Minh Huu Le, Mohd Fadzli Anwar Hassan, Zhi-Wen Sun
Принадлежит: Intermolecular Inc

A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

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Номер записи: 39
27-06-2013 дата публикации

Method for manufacturing a magnetic recording disk with improved yield

Номер: US20130161181A1
Автор: Bruno Marchon, Connie H.T. Wiita, Franck D. R. dit Rose, Thomas E. Karis, Xing-Cai Guo
Принадлежит: Hitachi Global Storage Technologies Netherlands BV

A method for manufacturing a magnetic media for magnetic data recording that greatly reduces the time required to manufacture the magnetic media. After constructing the magnetic disk with the desired magnetic media layer, a protective overcoat is deposited on the disk. The disk is then exposed to ozone in order to speed the rate of oxidation of the protective overcoat and thereby reduce the time needed to treat the overcoat. After exposing the overcoat to an ozone a lubrication layer can be applied. This process reduces the time necessary to cure the overcoat from a time of about 24 hours to a time range of 10 seconds to 30 minutes.

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Номер записи: 40
25-07-2013 дата публикации

Dry Coating Apparatus

Номер: US20130186339A1
Автор: Dong-Yoeul Lee, Kyoung-Bo Kim, Kyung-hoon Nam, Mun-Jong Eom, Sang-Cheol Lee, Sang-Hoon Park, Seok-Jun HONG, Tae-Yeob Kim, Woo-Sung Jung, Yang-Woo Nam, Yong-Hwa Jung, Young-Jin Kwak
Принадлежит: Posco Co Ltd

Provided is a dry coating apparatus for coating a coating material, i.e., deposition vapor (metal vapor) on a substrate (a steel strip). The dry coating apparatus includes a coating part disposed in a vacuum to coat deposition vapor generated through heating and evaporation of a supplied coating material onto a proceeding object to be coated and a heating source disposed in an atmosphere to heat and levitate the coating material in the coating part.

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Номер записи: 41
25-07-2013 дата публикации

Al PLATING LAYER/Al-Mg PLATING LAYER MULTI-LAYERED STRUCTURE ALLOY PLATED STEEL SHEET HAVING EXCELLENT PLATING ADHESIVENESS AND CORROSION RESISTANCE, AND METHOD OF MANUFACTURING THE SAME

Номер: US20130186524A1
Автор: Eom Mun-Jong, Jung Woo-Sung, Jung Yong-Hwa, Kim Kyoung-Bo, Kim Tae-Yeob, Kwak Young-Jin, Lee Dong-Yoeul, Lee Sang-Cheol, Nam Kyung-Hoon, PARK Sang-Hoon
Принадлежит: POSCO

Provided is an aluminum (Al) plating layer/aluminum (Al)-magnesium (Mg) plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance, which is characterized in that the Al—Mg plating layer is formed on the Al plating layer. According to the present invention, corrosion resistance of an Al plated steel sheet is further improved by forming an Al—Mg alloy plating layer, and plating adhesiveness between plating layer and underlying steel sheet may be improved as well as excellent stability and practicality being realized. 1. An aluminum (Al) plating layer/aluminum (Al)-magnesium (Mg) plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance comprising:an underlying steel sheet;an Al plating layer including about 85 wt % or more of Al formed on the underlying steel sheet; andan Al—Mg plating layer formed on the Al plating layer.2. The Al plating layer/Al—Mg plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance of claim 1 , wherein the Al—Mg plating layer comprises about 20 wt % to about 80 wt % of Mg claim 1 , residual Al and other unavoidable impurities.3. The Al plating layer/Al—Mg plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance of claim 1 , wherein a thickness of the Al plating layer is within a range of about 3.5 μm to about 15 μm.4. The Al plating layer/Al—Mg plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance of claim 3 , wherein a thickness of the Al—Mg plating layer is within a range of about 1 μm to about 5 μm.5. A method of manufacturing an Al plating layer/Al—Mg plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance claim 3 , the method ...

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Номер записи: 42
08-08-2013 дата публикации

Integrated vapor transport deposition method and system

Номер: US20130203202A1
Автор: Changming Jin, Feng LIAO, Gang Xiong, John BARDEN, Rick C. Powell
Принадлежит: First Solar Inc

vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

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Номер записи: 43
15-08-2013 дата публикации

Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam

Номер: US20130206583A1
Автор: Druz Boris L., Hayes Alan V., Hegde Hariharakeshave S., Kanarov Viktor, Lakios Emmanuel, Roque Mario
Принадлежит: VEECO INSTRUMENTS, INC.

Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. 1. A method of processing a substrate having a plurality of features , the method comprising:(a) enabling an energetic particle beam having a substantially uniform flux distribution over at least a portion of a major dimension thereof;(b) orienting the features on the substrate with a first fixed angular orientation relative to the major dimension of the beam;(c) translating the substrate relative to the beam;(d) exposing the substrate to the energetic particle beam in a treatment zone during at least a first portion of the translation; and(e) shielding the substrate to the energetic particle beam during at least a second portion of the translation;wherein while the substrate is shielded in step (e) the energetic particle particle beam is disabled.2. The method of further comprising:indexing the substrate about an azimuthal axis by an angular increment to reorient the feature with a second fixed angular orientation relative to the major dimension of the beam; andrepeating steps (c) and (d) for a finite number of times.3. The method of wherein the substrate is indexed about the azimuthal axis to reorient the feature with the second fixed angular orientation while the substrate is shielded in step (e).4. The method of wherein the angular increment is 30° claim 2 , 60 claim 2 , or 90°.5. The method of wherein the angular increment is an integer fraction of 360° less than one-half.6. The method of wherein translating the substrate relative to the beam further comprises:moving the substrate linearly through the treatment zone; andreversing the ...

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Номер записи: 44
15-08-2013 дата публикации

Compact, filtered ion source

Номер: US20130206585A1
Автор: Paul Erik SATHRUM
Принадлежит: Fluxion Inc

The present invention relates to a filtered cathodic-arc ion source that reduces, or even eliminates, macroparticles while minimally compromising the compact size, simplicity, and high flux ion production benefits of unfiltered cathodic-arc sources. Magnetic and electrostatic forces are implemented in a compact way to guide ions along curved trajectories between the cathode source and the workpiece area such that macroparticles, which are minimally affected by these forces and travel in straight lines, are inhibited from reaching the workpieces. The present invention implements this filtering technique in a device that is compact, symmetrical and easy to manufacture and operate and which does not substantially compromise coating deposition rate, area, or uniformity.

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Номер записи: 45
29-08-2013 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20130220551A1
Автор: Saito Reiji
Принадлежит: CANON ANELVA CORPORATION

A substrate processing apparatus includes a substrate stage, a strut which supports the substrate stage, a first rotation drive portion which rotates the support, and at least three lift pins which are provided in the substrate stage. The substrate processing apparatus includes an elevation mechanism for vertically moving the lift pins. The elevation mechanism includes a first rotating member which is disposed around the support and rotates about the support, a second rotation drive portion which rotates about a rotation axis at a position offset from the rotation axis and rotates the first rotating member, at least three second rotating members which rotate while engaging with rotation of the first rotating member and are disposed below the lift pins, mobile bodies which linearly move upon rotation of the second rotating members, and pins which vertically move the lift pins. 1. (canceled)2. A substrate processing apparatus including a substrate stage , a strut which supports the substrate stage , and at least three lift pins which are provided in the substrate stage and configured to vertically move in a vertical direction relative to a surface of the substrate stage on which a substrate is mounted , comprising:an elevation unit configured to vertically moving the lift pins,said elevation unit comprisinga first rotating member which is disposed around the support and rotates about the support coaxially with a rotation axis of the support,a rotation drive portion which rotates about a rotation axis at a position offset from the rotation axis and rotates said first rotating member by transmitting the rotation to said first rotating member through a transmission member,at least three second rotating members which rotate while engaging with rotation of said first rotating member and are disposed below the lift pins, andmobile bodies which linearly move upon rotation of said second rotating members,wherein the lift pins vertically move upon linear movements of said ...

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Номер записи: 46
19-09-2013 дата публикации

Method for Coating a Substrate and Metal Alloy Vacuum Deposition Facility

Номер: US20130239890A1
Автор: Bruno Schmitz, Daniel Chaleix, Eric Silberberg, Patrick Choquet
Принадлежит: ArcelorMittal France SA

The present invention provides a process for coating a substrate. A metal alloy layer including at least two metallic elements is continuously deposited on the substrate by a vacuum deposition facility. The facility includes a vapor jet coater for spraying the substrate with a vapor containing the metallic elements in a constant and predetermined relative content, the vapor being sprayed at a sonic velocity. The process may advantageously be used for depositing Zn—Mg coatings. The invention also provides a vacuum deposition facility for continuously depositing coatings formed from metal alloys, for implementing the process.

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Номер записи: 47
19-09-2013 дата публикации

Method of manufacturing conductive film roll

Номер: US20130243945A1
Автор: Hiroyuki Takao, Kuniaki Ishibashi, Nozomi Fujino
Принадлежит: Nitto Denko Corp

A method of manufacturing a conductive film roll includes a first step of transporting a film base having an elongated shape while laminating a first transparent conductor layer, a first metal layer and a metal oxide membrane layer by sputtering on a first face side of the film base to form a first laminated body, a second step of feeding the film base, to a second film formation roll without being wound up into a roll, transporting the film base while making the metal oxide membrane layer of the first laminated body into contact with the second film formation roll, and sequentially laminating a second transparent conductor layer and a second metal layer by sputtering on a second face side of the film base to form a second laminated body, and a third step of winding up the second laminated body into a roll.

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Номер записи: 48
26-09-2013 дата публикации

Deposition apparatus

Номер: US20130247822A1
Автор: Dae-Youn Kim, Dong Rak Jung, Hyun-Kyu Cho
Принадлежит: ASM IP Holding BV

In a deposition apparatus, a protecting member made of an elastic body is inserted into a pin hole where a fixed substrate supporting pin is inserted and the substrate supporting pin is fixed through the protecting member to prevent damages to the substrate and a decrease in yield due to damages to the substrate supporting pin by preventing the substrate supporting pin from being damaged by loading or unloading of the substrate or static electricity. Further, the deposition apparatus includes a substrate supporting pin guide member capable of preventing misalignment of an unfixed substrate supporting pin to prevent damages to the substrate and a decrease in the yield due to damages to the substrate supporting pin by preventing the substrate supporting pin from being damaged by loading or unloading of the substrate or static electricity.

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Номер записи: 49
26-09-2013 дата публикации

Thin film forming method

Номер: US20130252417A1
Автор: Atsushi Gomi, Chiaki Yasumuro, Hiroaki Kawasaki, Jonathan Rullan, Osamu Yokoyama, Tadahiro Ishizaka, Takara KATO, Tatsuo Hatano
Принадлежит: Tokyo Electron Ltd

A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.

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Номер записи: 50
03-10-2013 дата публикации

Method For Manufacturing A Thin Film On A Substrate

Номер: US20130260026A1
Автор: Carsten Schuh, Dana Pitzer, Matthias Schreiter, Thorsten Steinkopff
Принадлежит: SIEMENS AG

A method for maufacturing a thin film on a substrate may include: coupling the substrate to a pretensioning facility such that the substrate with the pretensioning facility is isotropically extended in the surface, wherein the substrate is held elastically under pressure with a predetermined pretension; depositing a thin film material on the substrate with a deposition method, in which by applying heat to the thin film material, this is deposited on the substrate so that a thin film with the thin film material is embodied on the substrate; decoupling the substrate from the pretensioning facility; cooling the thin film accompanied by a shrinkage, wherein the predetermined pretension is at least high enough that the appearance of a tensile stress in the thin film is prevented in the case of shrinkage.

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Номер записи: 51
10-10-2013 дата публикации

Holder For Boring Head Coating

Номер: US20130264169A1
Автор: Dietz Michael, Heine-Kempkens Claus, Hochschwarzer Martin
Принадлежит: OERLIKON TRADING AG, TRUBBACH

The present invention relates to a holder for a number of borers, which can advantageously be used for coating borer tips. The holders according to the invention make it possible to arrange the borers in the coating unit in such a way that their tips rest on a cylindrical wall and these can be rotated past a coating source at the same minimum distance. The holder comprises a first curved wall with holes, a second curved wall with holes or slits and a third wall which serves as stop for borers inserted in the holes of the first and second wall. 1. Holder for carrying borers in a coating facility , having a first wall perforated with first holes and a second wall at a distance from the first wall and perforated with second holes or slits that are aligned with the first holes in such a way that borers can be inserted each into the first holes and the same borers simultaneously into the second holes or slits , wherein the holder comprises at least a third wall at a distance from the second wall and which is suitable for serving as a stop for the borers inserted in the first and second holes or slits and wherein at least the first wall and the third wall are curved along segments of circle and thus have curves designed in such a way that after inserting the borers up to the respective stop , they protrude as a whole with the borer tip from the holder following the segment of circle of the third wall.2. Holder according to claim 1 , characterized in that the second wall is also curved along a segment of circle.3. Holder according to claim 1 , characterized in that the second wall is placed at a distance from the first wall on its concave side and the third wall is placed at a distance from the second wall on the concave side of the first wall claim 1 , wherein the second wall is placed between the first and third walls.4. Holder according to claim 1 , characterized in that the first claim 1 , second and third wall are placed relative to one another and curved to segments ...

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Номер записи: 52
17-10-2013 дата публикации

ELECTROCHROMIC DEVICES

Номер: US20130270105A1
Автор: Pradhan Anshu, Rozbicki Robert T., WANG Zhongchun
Принадлежит: VIEW, INC.

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. 1. An apparatus for fabricating an electrochromic device , comprising: (i) a first deposition station containing a first target comprising a first material for depositing a layer of an electrochromic material on a substrate when the substrate is positioned in the first deposition station, and', '(ii) a second deposition station containing a second target comprising a second material for depositing a layer of a counter electrode material on the substrate when the substrate is positioned in the second deposition station; and, '(a) an integrated deposition system comprising(b) a controller containing program instructions for passing the substrate through the first and second deposition stations in a manner that sequentially deposits a stack on the substrate, the stack comprising the layer of electrochromic material in direct contact with the layer of counter electrode material.2. The apparatus of claim 1 , operable to pass the substrate from one station to the next without breaking vacuum.3. The apparatus of claim 1 , wherein the integrated deposition system further comprises one or more lithiation stations operable to deposit lithium from a lithium-containing material source on at least one of the electrochromic layer and the counter electrode layer.4. ...

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Номер записи: 53
24-10-2013 дата публикации

SPUTTERING DEVICE

Номер: US20130276699A1
Автор: WANG CHUNG-PEI
Принадлежит:

An sputtering device includes a carrier that includes a main body and support members. The main body defines a receiving space and includes a lateral surface defining at least one groove extending along a longitudinal direction. The receiving space and the at least one groove communicate with each other. The at least one groove is defined by a first surface and a second surface. The first surface defines recessed portions along the longitudinal direction and communicates with the receiving space. The support members are used for hanging workpieces. Each of the support members includes at least one support arm protruding from the lateral surface and is selectively and movably retained by one of the recessed portions. 1. A sputtering device comprising: a main body defining a receiving space and comprising a lateral surface defining at least one groove extending along a longitudinal direction of the main body, the receiving space and the at least one groove communicating with each other, the at least one groove being defined by a first surface and a second surface, the first surface defining a plurality of recessed portions along the longitudinal direction and communicating with the receiving space; and', 'a plurality of support members for hanging workpieces, each of the plurality of support members comprising at least one support arm protruding from the lateral surface and being selectively and movably retained within one of the recessed portions., 'a carrier comprising2. The sputtering device according to further comprising a plurality of resilient members claim 1 , wherein each of the plurality of resilient members is arranged between two neighboring support members to apply a pushing force to the two neighboring support members.3. The sputtering device according to claim 2 , wherein the plurality of resilient members are coil springs.4. The sputtering device according to claim 1 , wherein the number of the at least one support arm is four claim 1 , the four ...

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Номер записи: 54
24-10-2013 дата публикации

Gas lock, and coating apparatus comprising a gas lock

Номер: US20130276900A1
Автор: David Pocza, Martin Arnold, Norbert Schillinger, Stefan Reber
Принадлежит: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV

The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

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Номер записи: 55
24-10-2013 дата публикации

Manufacturing apparatus

Номер: US20130277207A1
Автор: Koji Tsunekawa
Принадлежит: Canon Anelva Corp

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

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Номер записи: 56
14-11-2013 дата публикации

VAPOR PHASE GROWTH APPARATUS

Номер: US20130298836A1
Автор: Ikenaga Kazutada, UCHIYAMA Kosuke
Принадлежит:

Provided is a vapor phase growth apparatus having a rotation/revolution mechanism by which a rolling member is prevented from riding onto an adjacent rolling member. In a vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members are rotatably provided in the circumferential direction of the susceptor via a rolling member(ball ) on a susceptor heated by a heating unit as well as is rotated by a driving unit, the substrate retaining member is rotated accompanied by the rotation of the susceptor and a substrate retained by the substrate retaining member is rotated while being revolved with respect to the rotation axis of the susceptor. As for the rolling members, rolling members different diameters (a large diameter ball and a small diameter ball ) are alternately arranged. 1. A vapor phase growth apparatus having a rotation/revolution structure in which a plurality of substrate retaining members are rotatably provided in the circumferential direction of the susceptor via a rolling member on a susceptor which is heated by a heating unit as well as is rotated by a driving unit, the substrate retaining member is rotated accompanied by the rotation of the susceptor and a substrate retained by the substrate retaining member is rotated while being revolved with respect to the rotation axis of the susceptor, characterized in that, for the rolling members, rolling members having different diameters are alternately arranged. The present invention relates to a vapor phase growth apparatus, and particularly, to a vapor phase growth apparatus having a mechanism in which a substrate on a susceptor is rotating/revolving.As a vapor phase growth apparatus in which, in a state in which a substrate retained on a susceptor in a flow channel is heated to a predetermined temperature, a gas phase material is supplied in the flow channel to deposit a thin film on the surface of the substrate, known is a vapor phase growth ...

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Номер записи: 57
14-11-2013 дата публикации

SPUTTERING APPARATUS

Номер: US20130299348A1
Автор: LING WEI-CHENG
Принадлежит:

A sputtering apparatus includes a support assembly and posts. The support assembly includes an upper base, a lower base, seat members, and connection posts interconnected between the upper base and the lower base. The upper base defines cutouts. The seat members are rotatably mounted on the lower base and aligned with the cutouts. Each seat member includes a hollow receiving post, a support post moveably received in the receiving post, a lever bar pivotably connected to the receiving post, and a drive post, the drive post and the support post are coupled to opposite ends of the lever bar. Each seat member is rotatable about a longitudinal axis of the receiving post. The posts fix workpieces in place. Each post includes a rod body portion having a first end and an opposite second end, an engagement portion at the first end, and a protrusion extending from the second end. 1. A sputtering apparatus , comprising:a preheating chamber;a deposition chamber;a connection assembly connecting the preheating chamber to the deposition chamber, the connection assembly comprising a connection member defining a passage in communication with the preheating chamber and the deposition chamber and a partition plate moveably coupled to the connection member, the partition plate configured for selectively closing or opening the passage;a first support assembly received in the preheating chamber;a second support assembly received in the deposition chamber; each first and second support assembly comprising an upper base, a lower base, a plurality of seat members, and at least two connection posts interconnected between the upper base and the lower base, the upper base defining a plurality of cutouts, the seat members rotatably mounted on the lower base and aligned with the cutouts, each seat member comprising a hollow receiving post, a support post moveably received in the receiving post, a lever bar pivoted to the receiving post, and a drive post, the drive post and the support post ...

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Номер записи: 58
14-11-2013 дата публикации

Co-evaporation system comprising vapor pre-mixer

Номер: US20130302520A1
Автор: Albert Ting, Enhao Lin, Kai-An Wang, Maosheng Ye, Michael Wong
Принадлежит: Individual

A processing system for depositing a plurality of source materials on a substrate, includes a first thermal evaporation source that can evaporate a first source material to produce a first vapor, a second thermal evaporation source that can evaporate a second source material to produce a second vapor, a vapor mixing chamber that allows the first vapor and the second vapor to be mixed to produce a mixed vapor, and conduits that can separately transport the first vapor and the second vapor to the vapor mixing chamber. The mixed vapor can be directed toward a substrate to deposit a mixture of the first source material and the second source material on the substrate. The processing system can also include vapor filters configured to regulate flows of the first vapor and the second vapor, and a mixed vapor filter to regulate flow of the mixed vapor.

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Номер записи: 59
14-11-2013 дата публикации

Method for depositing a transparent barrier layer system

Номер: US20130302536A1
Автор: Bjoern Meyer, Nicolas Schiller, Sebastian Bunk, Steffen Guenther, Steffen Straach, Thomas Kuehnel
Принадлежит: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV

The invention relates to a method for producing a transparent bather layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas and a gaseous or vaporous organic component are introduced into the vacuum chamber.

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Номер записи: 60
21-11-2013 дата публикации

MAGNETRON SPUTTERING COATING DEVICE, A NANO-MULTILAYER FILM, AND THE PREPARATION METHOD THEREOF

Номер: US20130309486A1
Автор: JIN Gong, LI Lingling, TU Jiangping, Wang Gang, WANG Meina
Принадлежит: BEIJING ZHONGAO HUICHENG BIOLOGY-TECH MATERIAL CO., LTD.

A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand. 1. A magnetron sputtering coating device , comprising:a deposition chamber;a rotating stand positioned within the deposition chamber and having a rotating axis;two first sputtering cathodes and a second sputtering cathode located on a circumference concentric with the rotating axis, wherein the second sputtering cathode contains a material different from the two first sputtering cathodes; anda baffle fixed on the rotating stand and divides the deposition chamber into at least two areas, wherein at least one first sputtering cathode is in one area, and the second sputtering cathode is in another area.2. The magnetron sputtering coating device according to claim 1 , wherein the first sputtering cathodes each include a graphite target claim 1 , and the second sputtering cathode includes a titanium or tantalum target.3. The magnetron sputtering coating device according to claim 1 , wherein the baffle extends along a diameter of the rotating stand.4. The magnetron sputtering coating device according to claim 1 , wherein the two first sputtering cathodes form an arc of substantially 180°-240° therebetween claim 1 , and the second sputtering cathode is positioned substantially in the middle of the two first sputtering cathodes.5. The magnetron sputtering coating device according to claim 1 , wherein the baffle is made of titanium claim 1 , aluminum claim 1 , stainless steel claim 1 , or a combination thereof.6. The magnetron sputtering coating device according to claim 1 , further comprising a support platform on the rotating stand for supporting an article to be ...

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Номер записи: 61
05-12-2013 дата публикации

SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH

Номер: US20130319854A1
Автор: HANSON RYAN, PARKHE Vijay D.
Принадлежит: Applied Materials, Inc.

Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above. 1. A substrate support , comprising:a dielectric support body having a support surface to support a substrate thereon and an opposing second surface;a chucking electrode disposed within the support body proximate the support surface; andan RF return path electrode disposed on the second surface of the dielectric support body, wherein the RF return path electrode is patterned into a plurality of sections.2. The substrate support of claim 1 , wherein the RF return path electrode further comprises:a layer of titanium disposed on the second surface, a layer of copper disposed on the layer of titanium, and a layer of nickel disposed on the layer of copper.3. The substrate support of claim 1 , wherein the RF return path electrode is about 50 micrometers to about 150 micrometers thick.4. The substrate support of claim 1 , wherein the plurality of sections are separated by thin strips of open regions disposed between adjacent sections.5. The substrate support of claim 4 , wherein the adjacent sections may be coupled together by a thin strip of conductive material forming the RF return path electrode.6. The substrate support of claim 4 , further comprising a plurality of terminals disposed ...

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Номер записи: 62
12-12-2013 дата публикации

Substrate conveyance roller, thin film manufacturing device and thin film manufacturing method

Номер: US20130330472A1
Автор: Daisuke Suetsugu, Kazuyoshi Honda, Noriaki Amo, Noriyuki Uchida, Sadayuki Okazaki
Принадлежит: Panasonic Corp

A substrate-conveying roller 6 A is configured to convey a substrate under vacuum, and includes a first shell 11 , an internal block 12 , and a shaft 10 . The first shell 11 has a cylindrical outer circumferential surface for supporting the substrate, and can rotate in synchronization with the substrate. The internal block 12 is disposed inside the first shell 11 , and is blocked from rotating in synchronization with the substrate. The shaft 10 extends through, and supports the internal block 12 . A clearance 15 is formed between the inner circumferential surface of the first shell 11 and the internal block 12 . A gas is introduced into the clearance 15 from the internal block 12 toward the inner circumferential surface of the first shell 11.

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Номер записи: 63
09-01-2014 дата публикации

Method for fabrication of localized plasmon transducers

Номер: US20140009754A1
Автор: Alexander Vaskevich, Israel Rubinstein, Tatyana Karakouz
Принадлежит: Yeda Research and Development Co Ltd

A method is presented for use in fabrication of metal islands on an oxide substrate. The method comprises: depositing a selected metal on the oxide substrate by evaporation of said selected metal; and annealing a film of the selected metal on said substrate at temperatures including an annealing temperature being less than 50° c lower than a glass transition temperature, thereby forming the metal islands partially embedded in said substrate.

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Номер записи: 64
16-01-2014 дата публикации

Deposition particle emitting device, deposition particle emission method, and deposition device

Номер: US20140014036A1
Автор: Satoshi Hashimoto, Satoshi Inoue, Shinichi Kawato, Tohru Sonoda
Принадлежит: Sharp Corp

A vapor deposition particle emitting device of the present invention includes: a nozzle section ( 110 ) having emission holes ( 111 ) from which gaseous vapor deposition particles are emitted out; a heating plate unit ( 100 ), provided in the nozzle section ( 110 ), which is made up of heating plates ( 101 ) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device ( 160 ) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates ( 101 ), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

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Номер записи: 65
16-01-2014 дата публикации

Dual sided workpiece handling

Номер: US20140014854A1
Автор: Ernest E. Allen, Jr., Philip J. McGrail, JR., Richard J. Hertel
Принадлежит: Varian Semiconductor Equipment Associates Inc

A processing apparatus includes a process chamber defining an enclosed volume, and a dual sided workpiece assembly disposed in the enclosed volume. The dual sided workpiece assembly includes a base portion and a flip portion coupled to the base portion. The flip portion has a support surface configured to support at least one dual sided workpiece and is configured to rotate about a flipping axis. The processing apparatus also includes a controller configured to control the dual sided workpiece assembly to expose a first side of the at least one dual sided workpiece to accelerating ions in the process chamber during a first time interval and to expose a second side of the at least one dual sided workpiece to accelerating ions during a second time interval different than the first time interval by rotating the flip portion about the flipping axis.

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Номер записи: 66
23-01-2014 дата публикации

Gas Recovering System

Номер: US20140020386A1
Автор: Hitoshi Sakamoto, Ying-Shih Hsiao
Принадлежит: Kern Energy Enterprise Co Ltd

The invention related gas recovering system contains at least one gas supply system, a gas treatment system, and a gas separation system. The gas supply system includes a gas supply unit and a supply source. The gas treatment system includes a gas reactor and a gas reduction device. Also, the gas separation system includes a first exhaust unit, a purifying unit, a second exhaust unit and a heating evaporation unit. The gas recovering system can avoid the unnecessary waste of gas to form hazardous waste. Therefore, gas can make more effective use to reduce cost.

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Номер записи: 67
30-01-2014 дата публикации

Chambers with improved cooling devices

Номер: US20140027092A1
Автор: Aaron Muir Hunter, Joseph M. Ranish
Принадлежит: Applied Materials Inc

Embodiments of the present invention provide a heating assembly using a heat exchange device to cool a plurality of heating element. The heating assembly includes a plurality of heating elements, a cooling element having one or more cooling channels for receiving cooling fluid therein, and a heat exchange device disposed between the plurality of heating elements and the cooling element. The heat exchange device comprises a hot interface disposed adjacent to and in thermal contact with the plurality of heating elements and a cold interface disposed adjacent to and in thermal contact with the cooling element.

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Номер записи: 68
30-01-2014 дата публикации

Vapor-deposited film having barrier performance

Номер: US20140030510A1
Автор: Koji Yamauchi, Shigenobu Yoshida, Shigeto Kimura, Tooru Hachisuka
Принадлежит: MITSUBISHI PLASTICS INC

Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a). The vapor-deposited layer (a) contains a metal oxide, has a thickness of from 10 to 500 nm, and has an average value of an elemental ratio of oxygen (O) and the metal (oxygen (O)/metal) of 1.20 or more and 1.90 or less and a difference between the maximum value and the minimum value of the (oxygen (O)/metal) of 0.35 or less on analysis of the vapor-deposited layer in the depth direction thereof by an X-ray photoelectron spectroscopy (ESCA) method.

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Номер записи: 69
06-02-2014 дата публикации

FILM-FORMING APPARATUS

Номер: US20140034489A1
Автор: Kajihara Yuji, Konaga Kazuya, Yasumatsu Yasushi
Принадлежит: CANON ANELVA CORPORATION

A film-forming apparatus includes a plurality of target electrodes, a substrate holder for holding a substrate, a fires shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; and second separating walls provided between the first shutter member and the target electrodes, wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member. 1. A film-forming apparatus comprising:a plurality of target electrodes each having an attachment surface to which a target can be attached;a substrate holder for holding a substrate at a position opposing the plurality of target electrodes;a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that oppose the attachment surfaces when the first shutter member is rotated;first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; andsecond separating walls provided between the first shutter member and the target electrodes,wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member,the second separating walls are provided so as to come into contact with the first separating wall if the first shutter member is rotated by a predetermined angle or more about a rotation shaft, andthe first separating walls are positioned so as to form gaps with the second separating walls during film formation processing.2. The film-forming apparatus according to claim 1 , further comprising a second shatter member rotatably provided between the first shutter member and the substrate holder and having an opening that opposes any one of the plurality of openings of the first ...

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Номер записи: 70
06-02-2014 дата публикации

Depositing apparatus and method for measuring deposition quantity using the same

Номер: US20140037849A1
Автор: Seuk-Hwan Park, Sung-Joong Joo, You-Min Cha
Принадлежит: Seuk-Hwan Park, Sung-Joong Joo, You-Min Cha

A deposition apparatus may uniformly control deposited quantities of a plurality of depositing sources by efficiently determining an abnormal depositing source. The deposition apparatus may reduce loss of materials by exactly determining an abnormal depositing source. The deposition apparatus includes: a plurality of depositing sources spraying a deposition material; a substrate holder fixing a substrate to face the depositing source; a depositing source shutter disposed at one side of the depositing source and opening and closing an passage of each depositing source; and a main shutter disposed between the depositing source and the substrate fixed to the substrate holder and depositing a part of the deposition material on the substrate through the main shutter.

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Номер записи: 71
06-03-2014 дата публикации

Rotatable locating apparatus with dome carrier and operating method thereof

Номер: US20140059836A1
Автор: Chia-Ming Chen, Fu-Ching Tung, Kuan-Chou Chen, Pei-Shan Wu, Sheng-Lang Lee
Принадлежит: Industrial Technology Research Institute ITRI

A rotatable locating apparatus including a fixing base, a rotatable rack, a first driving module, a carrier, and a second driving module is provided. The rotatable rack is pivoted on the fixing base through a first rotation axis. The first driving module is coupled to the rotatable rack to drive the rotatable rack rotating with respect to the fixing base along the first rotation axis. The carrier is provided with accommodating slots on an arc surface of the carrier, and the carrier is pivoted on the rotatable rack through a second rotation axis. The second rotation axis passes through a curvature center of the arc surface and is perpendicular to the first rotation axis. The curvature center is located on the first rotation axis. The second driving module is coupled to the carrier to drive the carrier rotating with respect to the rotatable rack along the second rotation axis.

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Номер записи: 72
20-03-2014 дата публикации

FORMING METHOD OF LAMINATED STRUCTURE BY INTERNAL OXIDATION

Номер: US20140079885A1
Автор: Chen Yung-I
Принадлежит: NATIONAL TAIWAN OCEAN UNIVERSITY

A forming method of a laminated structure by internal oxidation is provided. An alloy coating layer is formed. The alloy coating layer has a columnar grain structure and includes a first metal element and a second metal element, and the first metal element is oxidized more easily than the second metal element. Thereafter, a thermal oxidation treatment process is performed to the alloy coating layer, so as to form a plurality of oxide layers and a plurality of metal layers stacked alternately with each other from a surface portion of the alloy coating layer. A material of the oxide layers includes an oxide of the first metal element, and a material of the metal layers includes the second metal element. 1. A forming method of a laminated structure by internal oxidation , comprising:forming an alloy coating layer, wherein the alloy coating layer has a columnar grain structure and comprises a first metal element and a second metal element, and the first metal element is oxidized more easily than the second metal element; andperforming a thermal oxidation treatment process to the alloy coating layer, so as to form a plurality of oxide layers and a plurality of metal layers stacked alternately along a growth direction of the columnar grain structure from a surface portion of the alloy coating layer, wherein a material of the oxide layers comprises an oxide of the first metal element, and a material of the metal layers comprises the second metal element.2. The forming method of claim 1 , wherein each oxide layer and each metal layer is formed transversely adjacent grains.3. The forming method of claim 1 , wherein the first metal element comprises Al claim 1 , Cr claim 1 , Cd claim 1 , In claim 1 , Mo claim 1 , Sn claim 1 , Ta claim 1 , Y or Zr.4. The forming method of claim 1 , wherein the second metal element comprises Ru claim 1 , Re claim 1 , Pt claim 1 , Ir claim 1 , Os claim 1 , Pd claim 1 , Rh claim 1 , Au or Ag.5. The forming method of claim 1 , wherein a ...

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Номер записи: 73
27-03-2014 дата публикации

Vacuum treatment apparatus

Номер: US20140086711A1
Автор: Bart Scholte Von Mast, Daniel Rohrer, Rogier Lodder, Rolf Bazlen, Wolfgang Rietzler
Принадлежит: OC OERLIKON BALZERS AG

To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber the vacuum treatment chamber is split into a workpiece treatment compartment and a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows a pumping port to have a flow cross-section area that is freely selectable independently from the geometry of the treatment compartment.

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Номер записи: 74
27-03-2014 дата публикации

3-DIMENSIONAL NANOPLASMONIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Номер: US20140087138A1
Автор: BAE Ji-hyun, Jeon Sang-hun, Park Jong-jin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A three-dimensional (3D) nanoplasmonic structure includes a substrate; a plurality of nanorods formed on the substrate; and a plurality of metal nanoparticles formed on surfaces of the substrate and the plurality of nanorods. A method of manufacturing a 3D nanoplasmonic structure includes preparing a substrate; growing a plurality of nanorods on the substrate; forming a metal layer on surfaces of the plurality of nanorods; and dewetting the metal layer into particles by heat-treating the metal layer 1. A three-dimensional (3D) nanoplasmonic structure comprising:a substrate;a plurality of nanorods formed on the substrate; anda plurality of metal nanoparticles formed on surfaces of the substrate and the plurality of nanorods.2. The 3D nanoplasmonic structure of claim 1 , wherein the plurality of nanorods comprise an oxide semiconductor material claim 1 , a metal oxide claim 1 , an insulating material claim 1 , or carbon nanotubes.3. The 3D nanoplasmonic structure of claim 1 , wherein the plurality of metal nanoparticles comprise one of gold (Au) claim 1 , silver (Ag) claim 1 , ruthenium (Ru) claim 1 , and copper (Cu).4. The 3D nanoplasmonic structure of claim 1 , wherein the plurality of metal nanoparticles have a size distribution of at least two sizes.5. The 3D nanoplasmonic structure of claim 1 , wherein the substrate comprises a textile structure.6. The 3D nanoplasmonic structure of claim 5 , wherein the textile structure comprises textile fiber and a conductive layer coated on a surface of the textile fiber.7. The 3D nanoplasmonic structure of claim 5 , wherein the substrate comprises a carbon material textile or an inorganic material textile.8. An optoelectronic device comprising the 3D nanoplasmonic structure of .9. A method of manufacturing a three-dimensional (3D) nanoplasmonic structure claim 1 , the method comprising:preparing a substrate;forming a plurality of nanorods on the substrate;forming a metal layer on surfaces of the plurality of nanorods; ...

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Номер записи: 75
27-03-2014 дата публикации

Deposition device, and collection device

Номер: US20140087450A1
Автор: Satoshi Hashimoto, Satoshi Inoue, Shinichi Kawato, Tohru Sonoda
Принадлежит: Sharp Corp

A Film ( 7 ) is provided on at least a part of a surface of each of a vapor deposition preventing plate ( 3 ) and a shutter ( 4 ) of a vacuum chamber ( 5 ) on which surface vapor deposition particles are vapor-deposited, the film ( 7 ) being provided so as to be peeled off from the each of the vapor deposition preventing plate ( 3 ) and the shutter ( 4 ), and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film ( 7 ) is made.

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Номер записи: 76
10-04-2014 дата публикации

Thermal expansive aluminum guide roller and production method thereof

Номер: US20140100096A1
Автор: Fajie Chen, Shengfan Chen, Shengzhen Chen, Xiandong Chen, Yuna Jiang
Принадлежит: SHANGHAI HONGHAO ENTERPRISE DEVELOPMENT Co Ltd

A thermal expansive aluminum guide roller includes: an aluminum guide roller base, wherein the aluminum guide roller base is coated by an irony layer, the irony layer is coated by a hard metallic layer. Preferably, the hard metallic layer is a nickel layer or a titanium layer. Aluminum is utilized because of a small density. With the light weight, inertia is small and a rotation speed can be adjusted rapidly for quickly adapting to different conditions while coating. A production method of the thermal expansive aluminum guide roller includes: a step of preparing the aluminum guide roller base, wherein the production method further includes steps of: A) preparing an irony sleeve; B) inserting the aluminum guide roller base into the irony sleeve; C) forming the irony layer; and D) forming a coating layer, wherein the irony layer is coated by a hard metallic layer.

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Номер записи: 77
06-01-2022 дата публикации

BRAKE DISK AND METHOD OF MAKING SAME

Номер: US20220003286A1
Автор: Meckel Nathan K.
Принадлежит:

A brake disk or drum has at least one working surface which opposes a braking member such as a brake pad or shoe. A plurality of spaced, raised island formations are provided across the working surface, with channels extending between the island formations. Each raised island formation has an outer surface which contacts a brake pad or brake shoe during braking. 135.-. (canceled)36. A braking surface formed on a substrate material , the braking surface comprising:a plurality of spaced surface modifications comprising a friction surface configured to engage a brake pad; and a first coating layer of a first coating material, the first coating material comprising a crystalline material; and', 'a second coating layer of a second coating material;', 'wherein the wear and corrosion resistant coating is configured to reduce, during use of the braking surface in braking of a vehicle, wear of the plurality of spaced surface modifications relative to the substrate material in an uncoated state., 'a wear and corrosion resistant coating applied to the friction surface, the wear and corrosion resistant coating comprising37. The braking surface of claim 36 , wherein the plurality of spaced surface modifications comprises a plurality of raised formations.38. The braking surface of claim 36 , further comprising grooves extending between the plurality of spaced surface modifications claim 36 , the grooves comprising a roughened base surface.39. The braking surface of claim 38 , wherein the roughened base surface creates turbulence in air flowing along the grooves in a direction parallel to the friction surface.40. The braking surface of claim 36 , wherein the first coating material comprises a metal.41. The braking surface of claim 36 , wherein the plurality of spaced surface modifications are formed of the substrate material.42. The braking surface of claim 36 , wherein the first coating material is applied to at least the friction surface of each surface modification through vapor ...

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Номер записи: 78
07-01-2016 дата публикации

Cutting tool

Номер: US20160001374A1
Автор: YaoCan Zhu
Принадлежит: Kyocera Corp

Problem: To provide a cutting tool that exhibits superior chipping resistance and wear resistance. Resolution means: A cutting tool 1 is provided with a base 2, and a coating layer 6 comprising columnar crystals 7 that cover the surface of the base 2. A Cutting edge 5 is formed at the crossing ridge line of a rake face 3 and a flank face 4. The average inclination angle (θ2) of the flank face 4, in the longitudinal direction of the columnar crystals 7 with respect to the direction orthogonal to the surface of the base 2, is greater than the average inclination angle (θ1) of the rake face 3, in the longitudinal direction of the columnar crystals 7 with respect to the direction orthogonal to the surface of the base 2.

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Номер записи: 79
06-01-2022 дата публикации

SPUTTERING DEVICE AND SPUTTERING METHOD

Номер: US20220005680A1
Автор: Noguchi Norimichi, Suetsugu Daisuke
Принадлежит:

A sputtering device includes: a vacuum chamber in which a target material and a substrate are disposable in a manner of facing each other; a DC power supply being electrically connectable to the target material; a gas supply source configured to introduce a film forming gas containing a nitrogen gas into the vacuum chamber; and a pulsing unit configured to pulse a current flowing from the DC power supply to the target material. The sputtering device forms a nitride thin film having a ternary or more composition containing nitrogen on the substrate by generating plasma in the vacuum chamber using a sintered alloy target material having a binary or more composition as the target material. 1. A sputtering device , comprising:a vacuum chamber in which a target material and a substrate are disposable in a manner of facing each other;a DC power supply being electrically connectable to the target material;a gas supply source configured to introduce a film forming gas containing a nitrogen gas into the vacuum chamber; anda pulsing unit configured to pulse a current flowing from the DC power supply to the target material, whereinthe sputtering device forms a nitride thin film having a ternary or more composition containing nitrogen on the substrate by generating plasma in the vacuum chamber using a sintered alloy target material having a binary or more composition as the target material.2. The sputtering device of claim 1 , further comprising:a viewport configured to observe the plasma generated in the vacuum chamber;a spectroscope configured to detect an emission spectrum of the plasma;an emission spectrum calculator configured to calculate at least one of an emission intensity ratio of the target material and an emission intensity ratio of nitrogen based on a position and an intensity of a characteristic peak of the detected emission spectrum; anda pulse controller configured to set an ON/OFF time of a pulse in the pulsing unit based on the calculated at least one emission ...

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Номер записи: 80
07-01-2016 дата публикации

DYEING DEVICE

Номер: US20160002768A1
Автор: INUZUKA Minoru, OTA Yasuo, TANAKA Motoshi, YANO Atsushi
Принадлежит: NIDEK CO., LTD.

A dyeing device dyes a resin body by vaporizing and depositing a sublimation dye adhered to a dyeing base to a resin body and fixing the dye to the resin body. The dyeing device lowers the pressure inside a closed chamber that closes the periphery of the resin body by a pump. In the state where the adhesion surface of the dyeing base to which the dye is adhered faces the resin body without contact, by heating the dye adhered to the dyeing base inside the closed chamber of which the pressure is lowered, the dye is sublimated, vaporized, and deposited on the resin body. The pressure inside the closed chamber is raised higher than the pressure at the vaporizing and depositing time. By irradiating the resin body on which the dye is vaporized and deposited with electromagnetic wave, the resin body is heated and the dye is and fixed. 1. A dyeing device for dyeing a resin body by vaporizing and depositing a sublimation dye adhered to a dyeing base to the resin body and fixing the dye to the resin body , comprising:a closed chamber that closes at least a periphery of the resin body provided in an installing unit;a pressure lowering device configured to lower pressure inside the closed chamber;a heating unit configured to heat the dye adhered to the dyeing base and configured to heat the resin body;a processor; and 'a pressure lowering controlling instruction of lowering the pressure inside the closed chamber by using the pressure lowering device;', 'memory storing a program, when executed by the processor, causing the dyeing device to executea vaporization and deposition controlling instruction of vaporizing and depositing the dye on the resin body by heating the dye adhered to the dyeing base inside the closed chamber of which pressure is lowered by the heating unit according to the pressure lowering controlling instruction to sublimate the dye in a state where an adhesion surface of the dyeing base to which the dye is adhered faces the resin body without contact; anda ...

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Номер записи: 81
07-01-2016 дата публикации

PVD PROCESSING APPARATUS AND PVD PROCESSING METHOD

Номер: US20160002769A1
Автор: Fujii Hirofumi
Принадлежит: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

A PVD processing apparatus and method capable of forming a composite coating having a coating thickness with excellent circumferential uniformity on an outer peripheral surface of a substrate. The PVD processing apparatus includes: a vacuum chamber; a revolving table revolving a plurality of substrates around an revolution axis in the vacuum chamber; a plurality of rotating tables rotating the substrates about their rotation axis parallel to the revolution axis on the revolution table; a plurality of types of targets provided radially outside the revolving table at circumferentially spaced positions; and a table rotating mechanism rotating the rotating table by an angle of 180° or more while the substrates passes through a region between two tangent lines drawn from a center of the target to an arc enveloping the rotating tables. 1. A PVD processing apparatus for performing coating formation on respective surfaces of a plurality of substrates , the PVD processing apparatus comprising:a vacuum chamber containing therein the plurality of substrates;a revolving table provided in the vacuum chamber and configured to support the plurality of substrates and to revolve the supported substrates around a revolution axis;a plurality of rotating tables configured to support respective substrates of the plurality of substrates and rotating the supported substrates, on the revolving table, about their respective rotation axes parallel to the revolution axis;a plurality of targets formed of respective different types of coating-formation materials, the targets disposed at respective positions circumferentially spaced on radial outside of the revolving table; anda table rotating mechanism for rotating each of the rotating tables about its rotation axis, the table rotating mechanism configured to rotate the rotating table, on which the substrate is placed, about its rotation axis by an angle of 180° or more relatively to the revolving table while the substrate passes through a ...

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Номер записи: 82
07-01-2016 дата публикации

APPARATUS WITH NEIGHBORING SPUTTER CATHODES AND METHOD OF OPERATION THEREOF

Номер: US20160002770A1
Автор: MÜHLFELD Uwe, PIERALISI Fabio
Принадлежит:

An apparatus for deposition of a layer stack on a non-flexible substrate or on a substrate provided in a carrier is described. The apparatus includes a vacuum chamber, a transport system, wherein the transport system and the vacuum chamber are configured for inline deposition, a first support for a first rotatable sputter cathode rotatable around a first rotation axis within the vacuum chamber, wherein a first deposition zone for depositing a first material is provided, a second support for a second rotatable sputter cathode rotatable around a second rotation axis within the vacuum chamber, wherein a second deposition zone for depositing a second material is provided, wherein the first rotation axis and the second rotation axis have a distance from each other of 700 mm or below; and a separator structure between the first rotation axis and the second rotation axis, adapted to receive the first material sputtered towards the second deposition zone and the second material sputtered towards the first deposition zone, wherein apparatus is configured for deposition of the layer stack comprising a layer of the first material and a subsequent layer of the second material. 1. An apparatus for deposition of a layer stack on a non-flexible substrate or on a substrate provided in a carrier , comprising:a vacuum chamber;a transport system, wherein the transport system and the vacuum chamber are configured for inline deposition;a first support for a first rotatable sputter cathode rotatable around a first rotation axis within the vacuum chamber, wherein a first deposition zone for depositing a first material is provided;a second support for a second rotatable sputter cathode rotatable around a second rotation axis within the vacuum chamber, wherein a second deposition zone for depositing a second material is provided, wherein the first rotation axis and the second rotation axis have a distance from each other of 700 mm or below;a separator structure between the first rotation ...

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Номер записи: 83
07-01-2016 дата публикации

CARRIER FOR SUBSTRATES

Номер: US20160002780A1
Автор: Heimel Oliver, LINDENBERG Ralph, WURSTER Haraldö, ZENGEL Claus
Принадлежит:

A carrier for supporting a substrate in a substrate processing chamber for vacuum processing is described. The carrier includes a substrate fixation assembly, wherein the substrate fixation assembly includes one or more fixation units; a first fixation dement having a first surface configured for contacting a first substrate surface of the substrate; a second fixation element having a second surface configured for contacting a second substrate surface of the substrate; and a force dement for providing a fixation force for the substrate with at least one of the first and the second fixation element. 1. A carrier for supporting a substrate in a substrate processing chamber , comprising: an edge contacting surface configured for contacting the edge of the substrate and defining a contact position;', 'a first fixation element having a first surface configured for contacting a first substrate surface of the substrate, wherein the first fixation element extends from the contact position by a first length substantially parallel to the first substrate surface;', 'a second fixation element having a second surface configured for contacting a second substrate surface of the substrate, wherein the second substrate surface opposes the first substrate surface of the substrate, and wherein the second fixation element extends from the contact position by a second length substantially parallel to the second substrate surface; and', 'a force element for providing a fixation force for the substrate with at least one of the first and the second fixation element;', 'wherein the shorter length of the first length and the second length provides in combination with the fixation force a momentum; and', 'wherein the one or more fixation units provide the momentum to be 10 Nmm per substrate edge length unit or above., 'a substrate fixation assembly, wherein the substrate fixation assembly comprises one or more fixation units, wherein each fixation unit comprises2. The carrier according to ...

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Номер записи: 84
05-01-2017 дата публикации

ADAPTIVE BEAM CURRENT FOR HIGH THROUGHPUT PATTERNING

Номер: US20170002455A1
Автор: Botman Aurelien Philippe Jean Maclou
Принадлежит: FEI COMPANY

A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature. 1. A method for beam-induced material deposition , comprising the steps of:determining a map of two-dimensional features to be deposited,analyzing the map to determine the sizes of the two-dimensional features to be deposited,determining from the size of the two-dimensional features to be deposited a beam current for each point of the two-dimensional features,determining a beam scan path to deposit the two-dimensional features, andscanning the beam in a scan pattern to deposit material to form the two dimensional features, a different beam current being used for at least some of the points in the scan pattern.2. The method of in which scanning the beam in the scan pattern to deposit material to form the two dimensional features comprises:scanning a first set of points of the two-dimensional features using a first beam current;changing an aperture in the beam path; andscanning a second set of points of the two-dimensional features using a second beam current.3. The method of in which scanning a first set of points of the two-dimensional features using a first beam current comprises using a different dwell time at different points.4. The method of further comprising:providing a description of a three-dimensional structure; anddividing ...

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Номер записи: 85
05-01-2017 дата публикации

Grain Size Tuning for Radiation Resistance

Номер: US20170002456A1
Автор: Taheri Mitra Lenore, Vetterick Greg
Принадлежит: DREXEL UNIVERSITY

A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850° C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450° C. to about 800° C. at a rate of temperature increase of from about 2° C./minute to about 30° C./minute; and maintaining the nanocrystalline material at the temperature of from about 450° C. to about 800° C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage. 1. A process for producing a radiation resistant nanocrystalline material that has a polycrystalline microstructure from a starting material selected from the group consisting of carbides , ceramics , silicon , ionic materials , polymers , oxides , metals , metal alloys and salts , the process comprising a step of:depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature of from about 20° C. to about 850° C. to produce the nanocrystalline material.2. The process of claim 1 , wherein the substrate is selected from the group consisting of carbides claim 1 , ceramics claim 1 , silicon claim 1 , ionic materials claim 1 , polymers claim 1 , oxides claim 1 , metals claim 1 , and salts.3. The process of claim 1 , wherein the substrate temperature is from about 100° C. to about 700° C.4. The process of claim 1 , wherein the physical vapor deposition is performed in an inert gas atmosphere.5. The process of claim 4 , wherein a gas flow in a range of from about 10 sccm to about 50 sccm ...

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Номер записи: 86
03-01-2019 дата публикации

EXTENSIBLE BARRIER FILMS, ARTICLES EMPLOYING SAME AND METHODS OF MAKING SAME

Номер: US20190002660A1
Автор: Deeb Gerald S., Gotrik Kevin W., Lyons Christopher S., Swanson Ronald P., Zhang Peihui
Принадлежит:

There is provided a barrier film including a barrier layer having two opposing major surfaces, a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer; a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer; and a substrate in direct contact with the first organic layer or the second organic layer; wherein the barrier layer comprises buckling deformations with average spacing smaller than average spacing of the buckling deformations in the first or second organic layer. 1. A barrier film comprising:(e) a barrier layer having two opposing major surfaces;(f) a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer; and(g) a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer;(h) a substrate in direct contact with the first organic layer or the second organic layer;wherein the barrier layer comprises buckling deformations with average spacing smaller than average spacing of the buckling deformations in the first or second organic layer.2. A barrier film comprising:(e) a barrier layer having two opposing major surfaces, wherein the barrier layer comprises buckling deformations;(f) a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer;(g) a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer; and(h) a substrate in direct contact with the first organic layer or the second organic layer;wherein each of the first organic layer and the second organic layer has a conformable surface conforming to a shape of the barrier layer; andwherein each of the first organic layer and the second organic layer has a substantially flat surface disposed opposite to and spaced apart from the conformable surface.3. The barrier film of any of to , wherein the substrate is heat-shrinkable.4. The barrier ...

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Номер записи: 87
02-01-2020 дата публикации

FILM FORMING APPARATUS AND FILM FORMING METHOD USING THE SAME

Номер: US20200002806A1
Автор: Demura Kazuya, Horie Takamasa, Kobayashi Hiroyuki
Принадлежит:

A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis. 1. A film forming apparatus comprising:a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first rotation axis;a first cathode portion configured to rotate a target in a first cylindrical shape about a second rotation axis; anda second cathode portion configured to rotate a target in a second cylindrical shape about a third rotation axis,whereinthe second rotation axis and the third rotation axis are disposed at positions skewed with respect to the first rotation axis,a relation of MaLb is satisfied, where La is a distance between the first rotation axis and the second rotation axis when viewed in the direction in which the first rotation axis extends and Lb is a distance between the first rotation axis and the third rotation axis when viewed in the direction in which the first rotation axis extends.2. The film forming apparatus according to claim 1 , whereinwhere, when viewed in the direction in which the first rotation axis extends, R is a radius of a circle drawn by points farthest from the first rotation axis within a film-formed surface of the base ...

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Номер записи: 88
02-01-2020 дата публикации

VACUUM PROCESSING APPARATUS

Номер: US20200002807A1
Автор: MATSUZAKI Junsuke, Mizushima Yuu, Takahashi Hirohisa
Принадлежит: ULVAC, INC.

A vacuum processing apparatus, including: a vacuum chamber in which a single vacuum environment is formed; first and a second processing regions provided in the vacuum chamber for performing predetermined vacuum processing on a substrate held by a substrate holder of a plurality of substrate holders; a conveying path for conveying the substrate holder, the conveying path being formed such that a projection shape with respect to a vertical plane forms a continuous ring shape; and a substrate holder conveying mechanism configured to convey the plurality of substrate holders each having a first and a second driven part along the conveying path. 1. A vacuum processing apparatus , comprising:a vacuum chamber in which a single vacuum environment is formed;first and a second processing regions provided in the vacuum chamber for performing predetermined vacuum processing on a substrate held by a substrate holder of a plurality of substrate holders;a conveying path for conveying the substrate holder, the conveying path being formed such that a projection shape with respect to a vertical plane forms a continuous ring shape; anda substrate holder conveying mechanism configured to convey the plurality of substrate holders each having a first and a second driven part along the conveying path, a first conveying part that conveys the substrate holder in a horizontal state along the conveying path in a first conveying direction;', 'a second conveying part that conveys the substrate holder in a horizontal state along the conveying path in a second conveying direction opposite to the first conveying direction and discharges the substrate holder;', 'a conveying and reversing part that reverses and conveys the substrate holder from the first conveying part toward the second conveying part, and', 'the conveying path is configured such that the first conveying part passes through one of the first and second processing regions, and the second conveying part passes through the other of the ...

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Номер записи: 89
07-01-2021 дата публикации

OPTICAL MONITOR

Номер: US20210002756A1
Автор: CATCHING Benjamin F., TILSCH Markus K.
Принадлежит:

A coating system may include a coating chamber; a substrate holder to move a substrate along a motion path; and a sensor device in the coating chamber, wherein the sensor device is configured to move along the motion path, and wherein the sensor device is to perform a spectral measurement on the substrate. 1. A coating system , comprising:a coating chamber;a substrate holder to move a substrate along a motion path; and wherein the sensor device is configured to move along the motion path, and', 'wherein the sensor device is to perform a spectral measurement on the substrate., 'a sensor device in the coating chamber,'}2. The coating system of claim 1 , further comprising:a power source for the sensor device at least partially internal to the coating chamber.3. The coating system of claim 1 , wherein the sensor device comprises:a light source, and 'wherein the light source and the optical sensor are on a same side of the substrate.', 'an optical sensor, and'}4. The coating system of claim 1 , wherein the sensor device comprises:a light source, and 'wherein the light source and the optical sensor are on different sides of the substrate.', 'an optical sensor, and'}5. The coating system of claim 4 , wherein the optical sensor is a first optical sensor claim 4 , and wherein the coating system further comprises a second optical sensor on a same side of the substrate as the light source.6. The coating system of claim 1 , wherein the sensor device is attached to the substrate holder.7. The coating system of claim 1 , wherein the sensor device is configured to move along the motion path based on the sensor device being affixed to a planetary motion system.8. The coating system of claim 1 , further comprising:a wireless communication interface between the sensor device and a processor of the coating system.9. The coating system of claim 1 , further comprising: 'wherein the plurality of sensor devices are configured to perform respective measurements on the substrate while ...

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Номер записи: 90
07-01-2021 дата публикации

Vacuum Lock and Method for Transferring a Substrate Carrier

Номер: US20210002757A1
Автор: CORD Bernhard, Reising Michael, SCHERGER Dieter
Принадлежит: Singulus Technologies AG

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1. 1. A vacuum lock for a vacuum coating plant , comprisinga chamber for receiving a substrate carrier and having an upper chamber part and a lower chamber part, wherein the chamber comprises a first and a second inner surface,a conveyor with drive components for conveying the substrate carrier, anda flow channel assembly for evacuating and venting the chamber, said flow channel assembly being configured to cause a gas flow in both a first region between the first inner surface and a first substrate carrier surface facing the first inner surface and in a second region between the second inner surface and a second substrate carrier surface facing the second inner surface,wherein a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length of the substrate carrier is smaller than 0.1, andwherein a ratio of a second distance between the second inner surface and the second substrate carrier surface to the length of the ...

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Номер записи: 91
07-01-2021 дата публикации

ROLL-TO-ROLL DEPOSITION APPARATUS AND ROLL-TO-ROLL DEPOSITION METHOD

Номер: US20210002758A1
Автор: KIYOTA JUNYA, SAITO Kazuya, Sakamoto Junichi, TAKEI MASAKI, Yokoyama Akihiro
Принадлежит:

A roll-to-roll deposition apparatus includes a vacuum chamber, a film travel mechanism, a lithium source, and a first roller. The vacuum chamber is capable of maintaining a reduced-pressure state. The film travel mechanism is capable of causing a film to travel inside the vacuum chamber. The lithium source is capable of evaporating lithium inside the vacuum chamber. The first roller is disposed between a deposition surface of the film and the lithium source. The first roller has a transfer pattern that receives the lithium evaporated from the lithium source. The first roller transfers a pattern of a lithium layer corresponding to the transfer pattern to the deposition surface while rotating. 1. A roll-to-roll deposition apparatus , comprising:a vacuum chamber capable of maintaining a reduced-pressure state;a film travel mechanism capable of causing a film to travel inside the vacuum chamber;a lithium source capable of evaporating lithium inside the vacuum chamber; anda first roller that is disposed between a deposition surface of the film and the lithium source, has a transfer pattern that receives the lithium evaporated from the lithium source, and transfers a pattern of a lithium layer corresponding to the transfer pattern to the deposition surface while rotating.2. The roll-to-roll deposition apparatus according to claim 1 , further comprisinga second roller that faces the first roller with the film provided between the second roller and the first roller.3. The roll-to-roll deposition apparatus according to claim 1 , wherein a vapor deposition container that stores the lithium and is disposed such that the lithium is vapor-deposited on the first roller, and', 'a doctor blade that controls a thickness of the lithium supplied from the vapor deposition container to the first roller., 'the lithium source includes'}4. The roll-to-roll deposition apparatus according to claim 1 , wherein a third roller that faces the first roller,', 'a vapor deposition container that ...

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Номер записи: 92
03-01-2019 дата публикации

APPARATUS AND METHOD FOR FILM FORMATION BY PHYSICAL SPUTTERING

Номер: US20190003038A1
Автор: Liu Siyang
Принадлежит: Wuhan China Star Optoelectronics Technology Co., L td.

Disclosed is an apparatus for film formation by physical sputtering, which includes a vacuum chamber; a substrate platform arranged inside of the chamber, and provided thereon with a substrate to be formed with a film; a target material arranged inside of the chamber, and arranged opposite to the substrate; at least one square resistance meter, which is connected to the target material to real-timely measure an actual resistance value of the target material; an excitation source, which is used to bombard the target material for sputtering atoms of the target material; and a control system, which is connected to the square resistance meter. The apparatus for film formation by physical sputtering has a simple structure, can monitor the consumption of the target material in real time, effectively avoid damage of a backboard and abnormality of a product resulting from breakdown of the target material, and improve the quality of the product. Meantime, the use efficiency of the target material can be improved and thus the waste of the material, which would otherwise be caused by incomplete use of the target material, can be avoided. 1. An apparatus for film formation by physical sputtering , comprising:a vacuum chamber;a substrate platform arranged inside of the chamber, and provided thereon with a substrate to be formed with a film;a target material arranged inside of the chamber, and opposite to the substrate;at least one square resistance meter, which is connected to the target material to real-timely measure an actual resistance value of the target material;an excitation source, which is used to bombard the target material for sputtering atoms of the target material; anda control system, which is connected to the square resistance meter.2. The apparatus for film formation by physical sputtering according to claim 1 , wherein the target material is arranged on a target material backboard.3. The apparatus for film formation by physical sputtering according to claim 2 , ...

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Номер записи: 93
07-01-2016 дата публикации

CAPACITIVE TOUCH PANEL AND METHOD OF FORMING THE SAME

Номер: US20160004359A1
Автор: Chen Yu-Jen, WANG Ming-Hsi
Принадлежит:

A capacitive touch panel and a touch display panel using the same are provided. The capacitive touch panel includes a substrate, a plurality of sensing structures and a metal oxide. Each sensing structure includes a plurality of sensing units and a plurality of bridge wires, and two adjacent sensing units are connected by a corresponding bridge wire. The metal oxide is formed on at least one of the bridge wires. The metal oxide is configured to reduce reflection of a light incident to the metal oxide. 1. A capacitive touch panel , comprising:a substrate;a plurality of sensing structures, wherein each sensing structure comprises a plurality of sensing units and a plurality of bridge wires, and two adjacent sensing units are connected by a corresponding bridge wire; anda metal oxide formed on at least one of the bridge wires, wherein the metal oxide is configured to reduce reflection of a light incident to the metal oxide.2. The capacitive touch panel according to claim 1 , wherein each bridge wire has an upper surface and a side face claim 1 , and the metal oxide is formed on at least one of the upper surface and the side face of at least one of the bridge wires.3. The capacitive touch panel according to claim 1 , wherein a thickness of the metal oxide ranges from 10 nanometers to 100 nanometers.4. The capacitive touch panel according to claim 1 , wherein the metal oxide comprises an oxide of the bridge wire.5. The capacitive touch panel according to claim 4 , wherein the metal oxide comprises aluminum oxide claim 4 , molybdenum oxide claim 4 , titanium dioxide claim 4 , copper oxide or silver oxide.6. A method of forming a capacitive touch panel claim 4 , comprising:forming a plurality of sensing structures on a substrate, wherein each sensing structure comprises a plurality of sensing units and a plurality of bridge wires, and two adjacent sensing units are connected by a corresponding bridge wire; andforming a metal oxide on at least one of the bridge wires, ...

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Номер записи: 94
05-01-2017 дата публикации

Evaporation carrier plate and evaporation device

Номер: US20170005267A1
Автор: Qinghui Zeng, Shupeng GUO
Принадлежит: BOE Technology Group Co Ltd

The present disclosure provides an evaporation carrier plate and an evaporation device. The evaporation carrier plate includes a carrier plate body. The carrier plate body includes a glass-carrying surface and a plurality of pin holes for pins to extend through. The evaporation carrier plate further includes a cover plate arranged on a surface of the carrier plate body away from the glass-carrying surface and configured to move relative to the carrier plate body to cover or open the pin holes.

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Номер записи: 95
05-01-2017 дата публикации

EVAPORATION SOURCE FOR ORGANIC MATERIAL, APPARATUS HAVING AN EVAPORATION SOURCE FOR ORGANIC MATERIAL, SYSTEM HAVING AN EVAPORATION DEPOSITION APPARATUS WITH AN EVAPORATION SOURCE FOR ORGANIC MATERIALS, AND METHOD FOR OPERATING AN EVAPORATION SOURCE FOR ORGANIC MATERIAL

Номер: US20170005297A1
Автор: Bangert Stefan, DIEGUEZ-CAMPO Jose Manuel, Haas Dieter, SCHÜßLER Uwe
Принадлежит:

An evaporation source for organic material is described. The evaporation source includes an evaporation crucible, wherein the evaporation crucible is configured to evaporate the organic material; a distribution pipe with one or more outlets, wherein the distribution pipe is in fluid communication with the evaporation crucible and wherein the distribution pipe is rotatable around an axis during evaporation; and a support for the distribution pipe, wherein the support is connectable to a first drive or includes the first drive, wherein the first drive is configured for a translational movement of the support and the distribution pipe. 1. An evaporation source for organic material , comprising:an evaporation crucible, wherein the evaporation crucible is configured to evaporate the organic material;a distribution pipe with one or more outlets, wherein the distribution pipe is in fluid communication with the evaporation crucible and wherein the distribution pipe is rotatable around an axis during evaporation; anda support for the distribution pipe, wherein the support is connectable to a first drive or includes the first drive, wherein the first drive is configured for a translational movement of the support and the distribution pipe.2. The evaporation source according to claim 1 , wherein the distribution pipe is a vapor distribution showerhead comprising the one or more outlets.3. The evaporation source according to claim 1 , wherein the distribution pipe provides a line source extending essentially vertically and/or wherein the axis of rotating the distribution pipe extends essentially vertically.4. The evaporation source according to claim 1 , wherein the distribution pipe is rotatable by at least 160°.5. The evaporation source according to claim 1 , wherein the distribution pipe is rotatable around the axis by a second drive rotating the distribution pipe relative to the support.6. The evaporation source according to claim 5 , wherein the support includes a support ...

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Номер записи: 96
03-01-2019 дата публикации

FILM FORMATION SIMULATION METHOD, PROGRAM, AND SEMICONDUCTOR PROCESSING SYSTEM

Номер: US20190005170A1
Автор: Kuboi Nobuyuki
Принадлежит: SONY CORPORATION

A film formation simulation method that enables prediction of the film quality of a film formed on a macro scale is provided. A film formation simulation method including: calculating a position at which each of raw material particles that enter a film formation surface migrates on the film formation surface, on a basis of an activation energy of a surface of the film formation surface, by using a computing device; calculating information regarding a defect of a film including the raw material particles on the film formation surface, on a basis of migration positions of the raw material particles of a predetermined amount, each time the migration positions of the raw material particles of the predetermined amount are calculated; and calculating an activation energy of a surface of the film including the raw material particles, on a basis of the information regarding the defect of the film. The activation energy of the surface of the film calculated immediately before is used in calculation of the migration position of each of the raw material particles. 1. A film formation simulation method comprising:calculating a position at which each of raw material particles that enter a film formation surface migrates on the film formation surface, on a basis of an activation energy of a surface of the film formation surface, by using a computing device;calculating information regarding a defect of a film including the raw material particles on the film formation surface, on a basis of migration positions of the raw material particles of a predetermined amount, each time the migration positions of the raw material particles of the predetermined amount are calculated; andcalculating an activation energy of a surface of the film including the raw material particles, on a basis of the information regarding the defect of the film,wherein the activation energy of the surface of the film calculated immediately before is used in calculation of the migration position of each of the ...

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Номер записи: 97
07-01-2021 дата публикации

Real-time detection of particulate matter during deposition chamber manufacturing

Номер: US20210005436A1
Автор: Kyle Ross Tantiwong, Mehdi Vaez-Iravani, Todd J. Egan
Принадлежит: Applied Materials Inc

Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.

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Номер записи: 98
03-01-2019 дата публикации

APPARATUS FOR TRANSPORTATION OF A SUBSTRATE CARRIER IN A VACUUM CHAMBER, SYSTEM FOR VACUUM PROCESSING OF A SUBSTRATE, AND METHOD FOR TRANSPORTATION OF A SUBSTRATE CARRIER IN A VACUUM CHAMBER

Номер: US20190006216A1
Автор: BUSCHBECK Wolfgang, Lau Simon
Принадлежит:

An apparatus for transportation of a substrate carrier in a vacuum chamber is provided. The apparatus includes a first track providing a first transportation path for the substrate carrier, and a transfer device configured for contactlessly moving the substrate carrier from a first position on the first track to one or more second positions away from the first track. The one or more second positions include at least one of a position on a second track and a process position for processing of a substrate. The transfer device includes at least one first magnet device configured to provide a magnetic force acting on the substrate carrier to contactlessly move the substrate carrier from the first position to the one or more second positions. 1. Apparatus for transportation of a substrate carrier in a vacuum chamber , comprising:a first track providing a first transportation path for the substrate carrier; anda transfer device configured for contactlessly moving the substrate carrier from a first position on the first track to one or more second positions away from the first track, 'at least one first magnet device configured to provide a magnetic force acting on the substrate carrier to contactlessly move the substrate carrier from the first position to the one or more second positions.', 'wherein the one or more second positions include at least one of a position on a second track and a process position for processing of a substrate, and wherein the transfer device comprises2. The apparatus of claim 1 , wherein the transfer device is configured for contactlessly moving the substrate carrier in a direction different from a direction of the first transportation path.3. The apparatus of claim 1 , wherein the at least one first magnet device is configured to provide a repulsive magnetic force acting on the substrate carrier to push the substrate carrier from the first position to the one or more second positions.4. The apparatus of of claim 1 , wherein the second track ...

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Номер записи: 99
02-01-2020 дата публикации

DEPOSITION APPARATUS AND METHOD OF ALIGNING MAGNET PLATE OF DEPOSITION APPARATUS

Номер: US20200006659A1
Автор: Ahn Junghyun
Принадлежит:

A deposition apparatus including a driving unit configured to be movable in first and second directions crossing each other and to be rotatable about a rotation axis parallel to a third direction normal to a plane defined by the first and second directions, a first supporting member connected to a bottom end of the driving unit in the third direction, a magnet plate disposed below and connected to the first supporting member, a second supporting member disposed below the magnet plate, and a plurality of first connection units disposed on the first supporting member. The first connection units may extend in the third direction, may penetrate the first supporting member and the magnet plate, and may be connected to the second supporting member. 1. A deposition apparatus , comprising:a driving unit configured to be movable in first and second directions crossing each other and to be rotatable about a rotation axis parallel to a third direction perpendicular to a plane defined by the first and second directions;a first supporting member connected to a bottom end of the driving unit, in the third direction;a magnet plate disposed below and connected to the first supporting member;a second supporting member disposed below the magnet plate; anda plurality of first connection units disposed on the first supporting member, the first connection units extending in the third direction, penetrating the first supporting member and the magnet plate, and being connected to the second supporting member.2. The deposition apparatus of claim 1 , wherein the first connection units are connected to the second supporting member through a plurality of first holes claim 1 , which are defined in the first supporting member claim 1 , and through a plurality of second holes claim 1 , which are defined in the magnet plate and are overlapped with the first holes.3. The deposition apparatus of claim 2 , wherein each of the first connection units comprises:a first support unit disposed on the ...

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Номер записи: 100