СПОСОБ ФОРМИРОВАНИЯ ЭПИТАКСИАЛЬНЫХ ГЕТЕРОСТРУКТУР EuO/Ge

Изобретение относится к способам формирования эпитаксиальных гетероструктур EuO/Ge, которые могут быть использованы в устройствах спинтроники. Способ формирования эпитаксиальных гетероструктур EuO/Ge включает осаждение на германиевую подложку атомов металла в потоке молекулярного кислорода методом молекулярно-лучевой эпитаксии, при этом поверхность подложки Ge(001) предварительно очищают от слоя естественного оксида, или очищают от слоя естественного оксида и формируют на ней поверхностные фазы Еu, представляющие собой субмонослойные покрытия из атомов европия, после чего при температуре подложки TS=20÷150°C производят осаждение европия при давлении PEu=(0,1÷100)⋅10-8 Торр потока атомов европия (ФEu) в потоке кислорода ФO2 с относительной величиной 2≤ФEu/ФO2≤2,2 до формирования пленки ЕuО толщиной менее 10 нм. Техническим результатом заявляемого изобретения является формирование эпитаксиальных гетероструктур EuO/Ge с атомно-резким интерфейсом без использования буферных слоев. 5 ил., 3 пр ...

СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНЫХ СТРУКТУР НИТРИДОВ ЭЛЕМЕНТОВ ГРУППЫ A3

Изобретение относится к технологии получения полупроводниковых соединений типа А3N и может быть использовано при изготовлении эпитаксиальных структур различного назначения. Сущность изобретения: способ получения эпитаксиальных структур нитридов элементов группы А3 на кристаллических подложках включает создание в вакуумной камере в бесстолкновительном режиме одного или нескольких молекулярных потоков, содержащих элементы группы А3, и молекулярного потока аммиака посредством подачи его в вакуумную камеру из газового источника; отношение плотности молекулярного потока амиака к суммарной плотности молекулярных потоков элементов группы А3 лежит в пределах 100 - 10000. Изобретение позволяет повысить качество эпитаксиальных структур, а также скорость их роста. 1 ил.

СПОСОБ СОЗДАНИЯ ДВУМЕРНОГО ФЕРРОМАГНИТНОГО МАТЕРИАЛА ДИСИЛИЦИДА ГАДОЛИНИЯ СО СТРУКТУРОЙ ИНТЕРКАЛИРОВАННЫХ СЛОЕВ СИЛИЦЕНА

Изобретение относится к технологии создания двумерных магнитных материалов для сверхкомпактных спинтронных устройств. Способ получения дисилицида гадолиния GdSiсо структурой интеркалированных слоев силицена методом молекулярно-лучевой эпитаксии заключается в осаждении атомарного потока гадолиния с давлением P(от 0,1 до менее 1)⋅10Торр или P(от более 1 до 10)⋅10Торр на предварительно очищенную поверхность подложки Si(111), нагретую до T=350 ÷ менее 400°С или T=более 400 ÷ 450°С, до формирования пленки дисилицида гадолиния толщиной не более 7 нм. Технический результат заключается в формировании эпитаксиальных пленок двумерного магнитного материала GdSiкристаллической модификации hP3 со структурой интеркалированного гадолинием многослойного силицена на подложках кремния. Такие структуры являются однородными по толщине, не содержат посторонних фаз, являются ферромагнитными. 5 ил., 4 пр.

Способ формирования тонких упорядоченных полупроводниковых нитевидных нанокристаллов без участия стороннего катализатора на подложках кремния

Изобретение относится к технологии получения полупроводниковых наноматериалов. Способ формирования тонких упорядоченных полупроводниковых нитевидных нанокристаллов (ННК) арсенида галлия на кремнии характеризуется тем, что на подложке кремния с кристаллографической ориентацией поверхности (111) или (100) формируют ингибиторный слой оксида кремния (SiO) толщиной 80-120 нм методом термического прокисления в среде азот/пары воды при температуре Т=850-950°С при давлении, близком к атмосферному, после чего наносят слой электронного резиста, в котором формируют окна методом электронной литографии путем экспонирования электронным пучком с последующим проявлением, при этом процесс проявления останавливают путем промывки в растворителе и последующей сушки, затем осуществляют реактивное ионноплазменное травление в плазмообразующей смеси газов SFи Аr с формированием окон в ингибиторном слое оксида кремния, в которых методом молекулярно-пучковой эпитаксии с использованием источников Ga и As выращивают ...

СПОСОБ СОЗДАНИЯ ДВУМЕРНЫХ ФЕРРОМАГНИТНЫХ МАТЕРИАЛОВ EuGeИ GdGeНА ОСНОВЕ ГЕРМАНЕНА

Изобретение относится к технологии получения двумерных ферромагнитных материалов EuGeили GdGe, которые могут быть использованы при создании компактных спинтронных устройств. Способ создания двумерных ферромагнитных материалов EuGeи GdGeна основе германена заключается в осаждении атомарного потока европия с давлением P=(0,1÷100)⋅10Торр или гадолиния с давлением P=(0,1÷10)⋅10Торр на предварительно очищенную поверхность подложки Ge(111), нагретую до 290°С Подробнее

СПОСОБ ФОРМИРОВАНИЯ УЛЬТРАТОНКОЙ ПЛЕНКИ

... 1. Способ формирования ультратонкой пленки, включающий осаждение атомов адсорбата на подложку в вакууме и наращивание пленки монослой за монослоем, отличающийся тем, что кинетическую энергию атомов адсорбата поддерживают преимущественно минимально возможной, но не менее значения, необходимого для обеспечения скорости осаждения, превышающей скорость осаждения на подложку паров остаточной атмосферы.2. Способ по п.1, отличающийся тем, что плотность потока атомов адсорбата одновременно и на всем его протяжении по сечению, параллельному поверхности подложки, поддерживают одинаковой.3. Способ по п.1, отличающийся тем, что осаждение атомов адсорбата периодически прекращают предпочтительно в момент начала уменьшения скорости роста температуры пленки и затем возобновляют при достижении температурой поверхности подложки ее исходного уровня, в том числе в процессе формирования, по крайней мере, первого монослоя пленки.4. Способ по п.1, отличающийся тем, что используют поверхность подложки преимущественно ...

УСТРОЙСТВО ДЛЯ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

Изобретение относится к вакуумной технике и может быть использовано в технологии получения тонкопленочных многослойных покрытий. Устройство содержит вакуумную технологическую камеру, размещенные в ней напротив подложки кольцевые рассеиватели, системы подачи паров материалов, соединяющие кольцевые рассеиватели с источниками паров материалов, манипулятор для перемещения подложек и охлаждаемые экраны. Кольцевые рассеиватели установлены в технологической камере в виде пакета соосно друг относительно друга, источники паров вынесены за пределы технологической камеры и снабжены системами загрузки испаряемых материалов, системами подачи газовых металлоорганических соединений, а в камере кольцевого рассеивателя установлена дросселирующая решетка, разделяющая ее на две кольцевые камеры. К технологической камере присоединены шлюзовые камеры, в которых размещены системы загрузки испаряемых материалов, включающие в себя источники паров твердых материалов, снабженные запорными устройствами, узлами стыковки ...

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОГО БУФЕРНОГО СЛОЯ GaP НА ПОДЛОЖКЕ КРЕМНИЯ МЕТОДОМ МОЛЕКУЛЯРНО-ПУЧКОВОЙ ЭПИТАКСИИ

REAGENZQUELLE FUER MOLEKULARSTRAHLEPITAXIE.

Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls.

Tiegel aus pyrolytischem Bornitrid zur Verwendung in der Molekularstrahlepitaxie

Molecular beam epitaxy apparatus and method

Molecular beam epitaxy apparatus for forming an epitaxial deposit of, for example, GaN on a substrate S, has a vacuum chamber 10 containing a heated support 12 for the substrate S. The chamber 10 is fitted with an exhaust conduit 16 connected with an ultra high vacuum pump 14, and with a first supply conduit 20 for ammonia. The inner end of the exhaust conduit 16 defines a vacuum outlet 18 of the chamber 10, whilst the first supply conduit 20 has an outlet 22 opening into the chamber 10. The outlet 22 and the vacuum outlet 18 are disposed adjacent the substrate S so that a high concentration of ammonia in the region of the substrate S can be achieved whilst still maintaining a high vacuum in the chamber 10. The outlet 22 of the first supply conduit 20 is disposed nearer to the substrate S than those of conventionally positioned effusion cells 24 and 26 defining second and further supply conduits respectively for gallium and another species to be supplied to the vacuum chamber 10.

PROCESS FOR THE PRODUCTION OF A COARSELY CRYSTALLINE OR MONOCRYSTALLINE METAL LAYER ON A SUBSTRATE

For the preparation of coarsely crystalline or monocrystalline metal layers by vapour deposition or atomisation of a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminium alloy or a Ti-V alloy with a V content of >70 atom% is first deposited on a substrate cooled to a temperature below -90 DEG C. The amorphous layer is then recrystallized by heating the substrate with the deposited metal layer to not more than 300 DEG C.

Process for Producing products using holography technology and apparatus thereof.

PROCEDURE FOR THE PRODUCTION OF GROUP III-METAL NITRIDE MATERIALS

PROCEDURE FOR THE PRODUCTION OF A SUPERCONDUCTING ONE, EPITAKTI YBACUO LAYER

TEST SOURCE FUER MOLECULAR BEAM EPITAXY.

PARTICLE BEAM BIAXIAL ORIENTATION OF A SUBSTRATE FOR EPITAXIAL CRIYSTAL GROWTH

Unibody crucible

System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

PROCESS FOR PREPARING SUPERCONDUCTIVE THIN FILMS

METHOD FOR MAKING ARTIFICIAL LAYERED HIGH-T_ SUPERCONDUCTORS

This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

FILM DEPOSITING APPARATUS AND PROCESS FOR PREPARING LAYERED STRUCTURE INCLUDING OXIDE SUPERCONDUCTOR THIN FILM

The invention provides a film deposition apparatus comprising a vacuum chamber provided with a partitioning means for dividing the vacuum chamber into a first sub-chamber and a second sub-chamber, the partitioning means including an opening for introducing a vacuum conductance for molecular flows between the first sub-chamber and the second sub-chamber so that a pressure difference can be created between the first sub-chamber and the second sub-chamber even when the opening is open. A gate valve is provided on the partitioning means for hermetically closing the opening of the partitioning means so as to shut off the molecular flows between the first sub-chamber and the second sub-chamber. At least two evaporation source sets each comprising at least one K cell are provided in the vacuum chamber in communication with an internal space of the vacuum chamber and designed to deposit a thin film at different deposition positions in the second sub-chamber and a main evacuating means is coupled ...

DIRECT MOMBE AND MOVPE GROWTH OF II-VI MATERIALS ON SILICON

A metalorganic arsenic source comprising R3-mAsHm, where R is an organic radical selected from the group consisting of CnH2n+1 and CnH2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality II-VI films, such as ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention.

DIPHENYLPIPERAZINE DERIVATIVE AND DRUG FOR CIRCULATORY ORGAN CONTAINING THE SAME

A diphenylpiperazine derivative represented by general formula (1), salt thereof, and drug for the circulatory organs containing the same as the active ingredient: (1) wherein R1 and R2 may be the same or different from each other and each represents hydrogen, halogen, alkyl, alkoxy, nitro, amino, hydroxy, optionally esterified carboxyl or trifluoromethyl; R3 represents hydrogen, alkyl, aralkyl, acyl, nitro or optionally esterified carboxymethyl; Ar represents phenyl or naphthyl which may have one to three substituents such as halogen, alkyl, alkoxy, aryloxy, aralkyloxy, nitro, amino, cyano, acyl, hydroxy, optionally esterified carboxyl, substituted sulfonyl, aryl or trifluoromethyl; Z represents sulfur or -NR4- wherein R4 represents hydrogen, alkyl, aralkyl, acyl, aryl, substituted sulfonyl or optionally esterified carboxyl; m represents a number of 1 to 5; and n represents a number of 0 to 5.

Procédé et dispositif pour le dépôt de couches monocristallines de matière

Process for the preparation of coarsely crystalline and monocrystalline metal layers

PROCEDURE FOR THE ZUECHTEN BY CONNECTING THIN SECTIONS.

Ferrite niobate titanate or ferrite niobate epitaxial thin film, and preparation method and application thereof

Provided are a ferrite niobate titanate or ferrite niobate epitaxial thin film, and a preparation method and an application thereof. The epitaxial thin film is composed of a Ca(Fe,Nb)(1-x)/2TixO3 thin film epitaxially grown on a monocrystalline substrate, wherein 0<=x<1. The preparation method comprises the steps: utilizing a radio frequency magnetron sputtering method; with a Ca(Fe,Nb)(1-x)/2TixO3 polycrystalline as a target, at the temperature of 600-800 DEG C and under an oxygen pressure of 1-5 mbar, carrying out epitaxial growth of the Ca(Fe,Nb)(1-x)/2TixO3 thin film on the monocrystalline substrate, after sputtering, naturally cooling to the room temperature to obtain the calcium ferrite niobate titanate epitaxial thin film. The preparation process is simple, the preparation course has no pollution to the environment, and the prepared epitaxial thin film has small dielectric property fluctuation and good stability of thermal property under a low frequency, and can be applied in preparation ...

Method for preparing briented growth dielectric-constant adjustable strontium lead titanate film

The present invention discloses a growth orientation of the dielectric constant adjustable strontium titan-ate thin films lead the preparation method, in the first coated onto a glass substrate at the end of the ITO electrodes drawn orientation induced by PT terbium-doped layer; again in terbium-doped Miscellaneous PT orientation induced layer deposition PST film; terbium-doped layer is induced by PT orientation (100) preferred orientation, the film also has PST (100) preferred orientation. The present invention through the random orientation of the substrate orientation PT induced by layer, induced by a high degree of preferred orientation of the PST film, avoid conventional film orientation of the single crystal substrates for high dependence at the same time this invention can be obtained relatively PST Films high scalability, high-performance approach for preparing a new film PST; PT induced orientation of the film can PST induced orientation, and promote the crystallization PST; whole ...

PROCEEDED FOR THE FORMATION BY GROWTH OF LAYERS IN GAAS OF THE TYPE NR BY EPITAXY BEAM HAS MOLECULAR

PROCESS Of EPITAXY PER MOLECULAR BEAM WITH PREMIXING

Epitaxial deposition with neutron and electron removal - using electromagnetic deflection and electrostatic polarisation

SYSTEM AND METHOD FOR EPITAXIAL GROWTH BY MOLECULAR BEAM WITH INTRODUCTION OF HYDROGEN TO THE PROCESS

PROCESS ALLOWING TO MAKE GROW FILMS OF GAAS ON SUBSTRATES OF IF OR GAAS

METHOD AND DEVICE FOR MONITORING A MICROWAVE PLASMA DEPOSITION

TOGETHER Of SOUND-PROOFING IMPROVES FOR VEHICLES TRACKED

METHOD OF PRODUCING A P-N OR AN N-P JUNCTION

CELLULE POUR EPITAXIE PAR JETS MOLECULAIRES ET PROCEDE ASSOCIE

CELLULE POUR EPITAXIE PAR JETS MOLECULAIRES. ELLE COMPORTE UNE CHAMBRE DE VAPORISATION 21 CONTENANT LE MATERIAU 23 A VAPORISER, MUNIE D'AU MOINS UNE OUVERTURE DE SECTION DETERMINEE POUR MAINTENIR LE MATERIAU A VAPORISER 23 A L'ETAT LIQUIDE A L'INTERIEUR DE LADITE CHAMBRE 21 ET POUR EMETTRE DES JETS MOLECULAIRES A FLUX CONTROLE, UN MANCHON 35 SOLIDAIRE DE LA CHAMBRE DE VAPORISATION 21, ENTOURANT LA (OU LES) OUVERTURES(S) 27 A SECTION DETERMINEE, DES MOYENS DE CHAUFFAGE 37 POUR MAINTENIR LA CHAMBRE DE VAPORISATION 21 ISOTHERME ET OBTENIR UNE TEMPERATURE SUFFISANTE DANS LE MANCHON 35 AFIN D'EVITER LA CONDENSATION DU MATERIAU VAPORISE DANS LEDIT MANCHON ET DANS LA (OU LES) OUVERTURES(S) A SECTION DETERMINEE.

Doped diamond semiconductor and method of manufacture

TRANSMISSION ELECTRON MICROSCOPE PROVIDED WITH AT LEAST ONE BALLISTIC MATERIAL JET SOURCE

The present invention relates to a transmission electron microscope (100; 200) comprising: - a column (102) defining an object chamber (104), - at least one ballistic material jet source (110, 202, 204, 300, 400, 500): - outside said object chamber (104), and - tightly attached to said column (102), facing an opening (304), referred to as port, provided on said column (102); characterised in that at least one jet source (110, 202, 204, 300, 400, 500) is arranged outside the column (102) and comprises a collimator of the material jet towards a predetermined direction (320), passing through the port (304) and leading into the object chamber (104) so that a portion of the material jet exits said source (110, 202, 204, 300, 400, 500) in said object chamber (104).

METHOD FOR PRODUCING FERROELECTRIC FILM, FERROELECTRIC FILM, AND USAGE THEREOF

Provided are a method for forming a ferroelectric film of a metal oxide having a fluorite structure at a temperature lower than 300˚C and a ferroelectric film obtained at a low temperature. The present invention provides a method for producing a ferroelectric film containing a crystalline metal oxide having an orthorhombic phase fluorite structure by sputtering a target by a sputtering method while the temperature of a substrate is less than 300˚C so as to deposit a film of a metal oxide capable of forming an orthorhombic phase fluorite structure on the substrate, and ensuring that the thermal history of the resulting film is less than 300˚C or applying an electric field to the film after the deposition or after the thermal history. In addition, the present invention also provides the above ferroelectric film formed on an organic substrate, glass, or metal substrate intended only for low-temperature use, and a ferroelectric element, ferroelectric functional element, or device using the ...

Process for fabrication of dielectric optical waveguide devices

The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.

Boron nitride film and process for preparing same

A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.

Boron nitride film and process for preparing same

A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.

METHOD FOR PRODUCING MONOCRYSTAL

A seed crystal (11) having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal (11) is increased. A coating film including carbon is formed on the backside surface of the seed crystal (11). The coating film and a pedestal (41) are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal (11) to the pedestal (41). A single crystal (52) is grown on the seed crystal (11). Before the growth is performed, a carbon film (22) is formed by carbonizing the coating film.

Device and method for making doped semiconductor layers

An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550 DEG C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved ...

Cell for epitaxial growth by molecular jets, and associated process

It comprises a vaporization chamber containing the material to be vaporized and provided with at least one opening with a given cross-section for maintaining the material to be vaporized in the liquid state within said chamber and for emitting controlled flow molecular beams, a sleeve integral with the vaporization chamber surrounding the opening or openings having a given cross-section, heating means for maintaining the vaporization chamber isothermal and for obtaining an adequate temperature in the sleeve to prevent condensation of the vaporized material in said sleeve and in the opening or openings having a given cross-section.

Light transmissive, electrically-conductive, oxide film and methods of production

Process and apparatus for atomic-layer epitaxy

PROCESS FOR GROWING AN EPITAXIAL FILM ON AN OXIDE SURFACE AND PRODUCT

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface (22), such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel (20, 26, 28). The first layer of metal oxide built upon the surface (22) includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface (22) includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 m for optical device applications.

METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH

薄膜形成装置および蒸発源収納容器

... 【目的】 Kセル内原料を劣化させずに取り出し保存できる装置及び容器を提供する。 【構成】 蒸発源収納容器30は、開口部46を蓋40で密閉した状態で成膜室から真空状態で分離できる構造になっている。このため、収納容器30内の各Kセル18を独立して個別に成膜室から分離させてKセル18内を真空に排気し、かつ、不活性ガスを導入できる。このため、Kセル18内の蒸着用原料の酸化および劣化を起こすことなく原料の交換およびKセル18の交換ができる。また、Kセル18の交換または原料の交換のとき成膜室を一度大気中に戻して窒素ガスを導入することがなくなり成膜室を超高真空に保持することができる。 ...

APPARATUS FOR CRYSTAL-GROWTH WITH MOLECULAR BEAM

PURPOSE: To provide an apparatus for crystal-growth with molecular beam capable of reproducibly realizing the growth rate and the composition over wide ranges and effective for improving the throughput of crystal. CONSTITUTION: A crystal is grown in a gas-source molecular beam crystal growing apparatus with a gaseous raw material using a molecular beam source cell 1 to introduce the raw material molecules for the growth of crystal into a high-vacuum vessel in the form of molecular beam. In the above apparatus, the distance L between the outlet port of the molecular beam source cell 21 and the substrate 22 is made to be arbitrarily adjustable by moving the molecular beam source cell 21 with a member fixed to a mobile plate 20, e.g. cell- moving mechanisms 25a,25b composed of rack, pinion, etc. COPYRIGHT: (C)1993,JPO&Japio ...

DEVICE FOR MOLECULAR BEAM EPITAXY

PURPOSE: To obtain the title device for molecular beam epitaxy giving a stabilized film strength in a short time and good controllability of film thickness, and useful for a thin compd. semiconductor film, etc., by providing ≥1kind of a molecular beam shutter made of a material having high IR transmissivity. CONSTITUTION: A manipulator 6 provided with a wafer 3 on one side and a flux monitor 7 on the other side is arranged in a vacuum chamber 5 kept at an ultrahigh vacuum by a vacuum pump 8. Raw materials 2 such as Ga and/or In are then charged in the Knudsen cells 1 opposed to the wafer 3 and heated, and the generated vapor is projected on the wafer 3. The molecular beam shutters 4 and 4A are then quickly opened and closed by a shutter driving mechanism 9 to pass or interrupt the vapor, and a thin compd. semiconductor film having a steep interface is grown on the wafer 3. COPYRIGHT: (C)1988,JPO&Japio ...

MOLECULAR BEAM SOURCE CELL

PURPOSE: To stabilize the intensity of a molecular beam and to remove Ga droplets by opening and closing a shutter above the outlet shutter of a crucible for the molecular beam to control the molecular beam generated by heating the molecular beam source in the crucible with a heater. CONSTITUTION: The molecular beam source 2 contained in the molecular beam crucible 1 with a heat radiation preventing plate 4 arranged on its outer periphery is heated by the heater 3 while measuring the temp. by a thermocouple 6 to generate a molecular beam. In the molecular beam source cell, the first shutter 7 capable of being opened and closed is arranged in the immediate proximity of the outlet 1a of the crucible 1 for the molecular beam. The Ga droplets in the vicinity of the outlet 1a re removed by the shutter. The second openable and closable shutter 8 is arranged above the first shutter 7 and at a distance from the outlet 1a. As a result, the variations in the intensity of the molecular beam can be ...

MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE: To obtain semiconductor light emitting element which have luminous wavelength at less than 700nm, by obtaining a good surface of GaAs substrate and thereafter forming molecular beam-epitaxial growth on it of a P compound semiconductor, which is of high quality without being contaminated with As. CONSTITUTION: As a crystal growth substrate for growth-forming a P compound semiconductor layer, a GaAs substrate, on whose surface a spontaneously- oxidized film is formed in pure water after etching process with sulfuric acid etchant, is used. The GaAs substrate, in which initial degassing is finished, is transferred from a substrate-heating chamber 2 to a pretreatment chamber 3, through a gate valve 6, and being gradually heated with As4 molecular beams radiated from an As cell, and then the temperature of the GaAs substrate is lowered with the radiation of molecular beams maintained. The GaAs substrate, carried from the pretreatment chamber 3 through a gate valve 7 to a growth chamber ...

MOLECULAR BEAM EPITAXY DEVICE

PURPOSE: To obtain an epitaxial crystal with less crystal defects by providing a specified cell shutter in front of the surface of plural cells each having a crucible charged with a raw material and growing the crystal while preventing the flying of the raw material deposited on the cell shutter. CONSTITUTION: The cell shutter 3 provided with a bent part 11 on the periphery of its plate is provided in front of the crucible 1 charged with the raw material 2 in the cell 8. When the molecules or atoms 4 of the raw material radiated from the crucible 1 are blocked by the shutter 3, the raw material 5 is deposited on the shutter 3. Plural cells 8 each having the crucible 1 are arranged on the wall surface 9 of the spherical chamber with a substrate 7 as the center. The molecules or atoms 4 of the raw material are irradiated in ultrahigh vacuum on the heated substrate 7 by successively opening the shutters 3 and an epitaxial crystal is grown. When the shutter 3 is opened and closed, the deposited ...

APPARATUS FOR PRODUCING CRYSTAL-ORIENTED THIN FILM

PURPOSE: To provide an apparatus for producing a crystal-oriented thin film capable of efficiently producing a thin film having excellent plane orientation comparable to a film produced by an ion-beam method on one or both surfaces of a substrate. CONSTITUTION: This film-forming apparatus is a sputtering apparatus provided with a substrate electrode 1 having plural substrate holders 2 to enable the inclination of substrate at an arbitrary angle θ relative to the horizontal plane and an assistant electrode 3 composed of plural (n) rectangular electrodes placed under the substrate electrode 1 and capable of forming a cathodic plasma space between a target 4 placed under the assistant electrode. The assistant electrode 3 is electrically insulated from the target 4. The cross-section of the plasma boundary line 5 between the cathode dark space and the negative glow of the cathodic plasma space is controlled to form a parabolic form by adjusting the bias voltage applied to the substrate electrode ...

SUBSTRATE HOLDER

PURPOSE: Not to expose lead wires to space of flying evaporated material at all, not to cause short circuit for a long-term use and to stably operate a device by attaching covers to a heater for heating a substrate of a substrate holder and a thermocouple for measuring temperature set in a crystal growth chamber of an epitaxial device of molecular beam. CONSTITUTION: In a substrate holder comprising a substrate susceptor 31, a heater 25 for heating the substrate, a thermocouple 50 for measuring temperature, a small bevel gear 8, a large bevel gear 14, etc., to make the substrate revolve on its own axis and rotate around a shaft set in a crystal growth chamber of an epitaxial device of molecular beam (MBS device), mechanism parts of the bevel gears, etc., cables of the heater and the thermocouple are provided with covers 33 and 34, put in the hollow rotating shaft 11 as it is without extending the various lead wires from the covers to the outside so that no evaporated substance is attached ...

MANUFACTURE OF THIN FILM

PURPOSE: To accomplish free change in the component and the construction of the film to be formed by giving an electronic impact and a heating to gas as component of the evaporated after introduced into a vacuum chamber where the substrate is arranged. CONSTITUTION: Gas whose flow rate has been regulated is introduced into a vacucum bell-jar 1 through a nozzle 4. Then, the gas is given an electronic impact from an electrode 5 positively viased with respect to the filament 6 and ionized as well as decomposed. In addition, with the heating of the filament, the gas particle is heated to relax the bondage thereby helping the decomposition. Then, as these particles reach the substrate 7, an evaporation film is formed. At this point, the components of the film can be changed by heating the substrate 7 with a filament 9. This enables the free production of the film varied in the component and the structure from single element to various kinds of elements. COPYRIGHT: (C)1980,JPO&Japio ...

METHOD OF MAKING SEMICONDUCTOR DEVICE WITH EXPOSURE OF SAPPHIRE SUBSTRATE TO ACTIVATED NITROGEN, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device including a near-intrinsic single-crystal GaN film, and having the film selectively doped in an n-type or p-type. SOLUTION: The semiconductor device includes the following elements: a substrate formed of a substance selected from a group comprising (100) silicon, (111) silicon, (0001) sapphire, (11-20) sapphire, (1-102) sapphire, (111) gallium arsenide, (100) gallium arsenide, magnesium oxide, zinc oxide and silicon carbide; a non-single-crystal buffer layer having a thickness of around 200-500 Å and containing a first substance grown on the substrate, the first substance containing gallium nitride; and a first growth layer grown on the buffer layer and containing gallium nitride and a first doped substance. COPYRIGHT: (C)2010,JPO&INPIT ...

MOLECULAR BEAM SOURCE CONTAINER

PURPOSE: To allow the stable supply of molecular beams in film formation by a molecular beam epitaxy method by providing specifically designed auxiliary racks into the tubular container into which solid raw materials are put and which generates the molecular beams by heating. CONSTITUTION: The tubular container which has an aperture 1 of the container in the upper part, is formed integrally with a side wall 3 and a bottom 2 and has 10 to 50mm diameter and 20 to 200mm length is used as the molecular beam container. The auxiliary racks 6 for housing the solid raw materials are provided in the side wall 3 of this container. The auxiliary racks 6 are provided with apertures 7 in the central part so that the molecular beams existing below these racks can pass the apertures. The peripheral parts of the apertures 7 of the auxiliary racks 6 for housing the solid raw materials have walls 8 projecting toward the apertures 1 so that the solid raw materials to serve as molecular beam sources can also ...

PRODUCTION OF SINGLE CRYSTAL LAYER OF SILICON CARBIDE

PURPOSE: To easily produce a single crystal layer wherein stoichiometric ratio is accurately kept by performing the growth of the single crystal layer in the presence of gaseous fluorine by means of a silicon (Si) molecular beam and a carbon (C) molecular beam. CONSTITUTION: Fluorine is introduced into an ultrahigh vacuum chamber 1 through an introducing pipe 5 for gaseous fluorine and the inside of the chamber 1 is kept in the gaseous fluorine atmosphere of about 5×10-8Torr. A single crystal layer of silicon carbide is grown on a base plate 4 for single crystal by heating and evaporating an Si source 9 and a C source 10 by means of the E type electron guns 8, 8. On this occasion, the strength of the molecular beams of Si and C is made to a required value by regulating the amount of fluorine to be introduced by means of a variable leak valve 11 provided to the midway part of the introducing pipe 5 and controlling the evaporation velocities of Si and C. The high-quality single crystal layer ...

CRYSTAL GROWTH APPARATUS

PURPOSE: To enable the melting of exclusively the surface part of a material and to dispense with the feed control of the material in the evaporation of a material in ultra-high vacuum in molecular state to effect the epitaxial growth of the material on a substrate by using a high-output pulse-laser apparatus. CONSTITUTION: Vapors generated from molten materials l, 2, 3 in ultra-high vacuum are scattered in molecular state and deposited on a GaAs substrate 4 to effect the epitaxial growth of the materials. In the above apparatus, only the extreme surface parts of the materials 1, 2, 3 are melted by the irradiation of the materials with high-output pulse laser light generated from a high-output pulse laser apparatus 16. The present apparatus dispenses with the feed control of the materials with mechanical shutter, etc., eliminates mechanical trouble and gives a crystal having high quality. COPYRIGHT: (C)1991,JPO&Japio ...

MANUFACTURE OF THIN FILM OF SINGLE CRYSTAL OF BARIUM LEAD BISMUTHATE

PURPOSE: To obtain a thin film having no grain boundary and showing superior superconductive characteristics by growing the titled thin film on a substrate by a sputtering method using porcelain formed by calcining a uniform powdery mixture having a specified composition as a target. CONSTITUTION: Compounds of Ba, Pb and Bi such as BaCO3, PbO2 and Bi2O3 are uniformly mixed so as to provide an atomic composition represented by the formula (where 0≤x≤1 and 1.2≤y≤2). A binder such as an aqueous soln. of PVA is added to the mixture, and they are granulated, molded, and calcined to form porcelain. The surface of the porcelain is made flat by polishing, and the porcelain is fixed in a magnetron sputtering apparatus as a target 2 by means of a supporting member 3. A gaseous mixture of Ar with O2 is introduced into the sputtering chamber 1 from the inlet 4, and a thin film of a single crystal of barium lead bismuthate is grown on a substrate 10 held on the holder 11 at 500W800°C by sputtering in ...

MOLECULAR BEAM EPITAXY

PURPOSE: To form a crystal with less impurities of carbon by using specified aluminum as the raw material at the time of growing a III-V compd. semiconductor thin film contg. aluminum by the title molecular beam epitaxy method. CONSTITUTION: In the molecular beam epitaxy method using an organometallic compd. as the raw material, the organometallic compd. having at least one hydrogen is used as the raw material for aluminum to grow the III-V compd. semiconductor thin film contg. aluminum. For example, Al(CH3)2H, Al(CH3)H2, etc., can be used as the raw material for aluminum. COPYRIGHT: (C)1988,JPO&Japio ...

MOLECULAR BEAM CRYSTAL GROWTH DEVICE

PURPOSE: To allow growth of high quality impurity-free crystal and obtain a high performance semiconductor material by providing a shutter for capturing impurity comprising a control shutter and impurity accommodating part in front of the molecular beam source cell of molecular beam crystal growth device. CONSTITUTION: A movable shutter 21 for capturing vaporized substance is arranged in parallel with a opening and closing controllable control shutter 22 at the rear position of said shutter arranged in front of the molecular beam source cells of MBE device. Namely, the control shutter 22 is moved in the direction of arrow mark A in front of the opening 9 of molecular beam source cell, the shutter 21 for capturing impurity moves, in place of it, in the direction of arrow mark C and it is then arranged in front of the aperture 9 of molecular beam source cell. Under this condition, impurity, gas or vaporized substance from the molecular beam source material are adhered to the impurity shielding ...

MANUFACTURING METHOD OF LIGHT TRANSMISSION PATH

PURPOSE: Easy formation of a complex light transmission path by means of the selective molecular stream epitaxial crystal growth method. COPYRIGHT: (C)1976,JPO&Japio ...

MEHTOD FOR GENERATING MOLECULAR BEAM

PURPOSE: To prevent a gas discharge from a cell and an entrainment effect by setting a molecular beam material in a vessel kept at a high temperature, introducing gases containing a halogen atom into a reaction vessel for reaction with the material and using halide vapors generated therefrom as a molecular beam source. CONSTITUTION: A molecular beam material 3 is set within a vacuum vessel 1 kept at a high temperature and gases 7 containing a halogen atom are introduced into a reaction vessel 1, thereby being made to react with the material 3. Halide vapors generated due to the reaction are used as a molecular beam source. Reaction between the metal 3 and the halogen gases 7 takes place at a relatively low temperature. Also, a halide has vapor pressure higher than the metal proper. As a result, a cell temperature can be kept low and the effect of a discharge gas can be restrained. Also, a fused liquid is free from a metal vapor bubble. COPYRIGHT: (C)1989,JPO&Japio ...

СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНОЙ ПЛЕНКИ МНОГОСЛОЙНОГО СИЛИЦЕНА, ИНТЕРКАЛИРОВАННОГО ЕВРОПИЕМ

Изобретение относится к способам получения эпитаксиальных тонкопленочных материалов, а именно EuSiкристаллической модификации hP3 (пространственная группа N164,) со структурой интеркалированных европием слоев силицена, которые могут быть использованы для проведения экспериментов по исследованию силиценовой решетки. Способ основан на стабилизации требуемой фазы EuSiпутем ее эпитаксиального роста на предварительно сформированном на Si(001) или Si(111) буферном слое SrSi. Способ заключается в осаждении методом молекулярно-лучевой эпитаксии атомарного потока стронция с давлением P=(0,5÷3)⋅10торр на предварительно очищенную и нагретую до T=500±20°С поверхность подложки кремния до формирования пленки дисилицида стронция, а затем в осаждении атомарного потока европия с давлением P=(0,5÷10)⋅10торр на подложку при температуре T=430÷550°С до формирования пленки дисилицида европия толщиной не более 8 нм. При этом слои силицидов образуются за счет диффузии атомов. Изобретение позволяет получать однородные ...

Устройство для молекулярно-лучевой эпитаксии

Изобретение относится к технике нанесения эпитаксиальных слоев полупроводниковых соединений и обеспечивает повышение производительности и качества выращиваемых структур. Устройство содержит камеру роста, внутри которой коаксиально ее стенкам размещены криопанели. Между криопанелями установлены средства ионно-сорбционной откачки, снабженные приводом вращения и возвратно-поступательного перемещения. Привод электрически связан с системой управления. 4 ил.

Устройство для молекулярно-лучевой эпитаксии

Изобретение относится к технологии получения интегральных микросхем и обеспечивает упрощение устройства и регулирование угла наклона. Устройство включает вакуумную камеру, в которой размещен подложкодержатель. Подложкодержатель соединен со средствами вращения и наклона. Отличия устройства относятся к выполнению средства наклона, которое позволяет проводить измерения наращиваемого слоя в процессе роста, позволяет регулировать угол наклона в пределах 0 - 5°. 1 ил.

Способ получения составных пленокНЕОРгАНичЕСКиХ СОЕдиНЕНий

VERFAHREN ZUR ZÜCHTUNG EINER PUFFERSCHICHT DURCH MOLEKULARSTRAHLENEPITAXIE

Molekularstrahl-Epitaxieverfahren

VERFAHREN ZUR HERSTELLUNG GROBKRISTALLINER ODER EINKRISTALLINER METALLSCHICHTEN

PROCEDURE FOR GROWING UP A EPITAXI FILM ON AN OXIDE SURFACE AND A PRODUCT

VERFAHREN ZUM ZUECHTEN VON VERBINDUNGS -DUENNSCHICHTEN

HYBRID RADIATION COATING SYSTEM AND PROCEDURE FOR THE PRODUCTION OF ZNO LAYERS

PROCEDURE FOR THE PRODUCTION OF ARTIFICIAL HIGH TEMPERATURE SUPERCONDUCTORS WITH MULTILEVEL STRUCTURE.

PROCEDURE AND EFFUSION CELL FOR THE PRODUCTION OF MOLECULAR BEAMS.

PROCEDURE FOR THE MEASUREMENT OF THE LAYER THICKNESS AND THE REFRACTIVE INDEX OF A THIN LAYER ON A SUBSTRATE AND DEVICE FOR THE EXECUTION OF THE PROCEDURE.

ONE-PIECE CRUCIBLE

ATOMIC LAYER EPITAXIAL GROWTH OF THIN FILMS

SPUTTERED SEMICONDUCTING FILMS OF CATENATED PHOSPHORUS MATERIAL AND DEVICES FORMED THEREFROM

SIMULTANEOUS MOLECULAR BEAM DEPOSITION OF MONOCRYSTALLINE AND POLYCRYSTALLINE III(A)-V(A) COMPOUNDS TO PRODUCE CONDUCTOR DEVICES

METHOD OF CLEANING SURFACES

PHB 32512 26.5.1976 A method of removing substantially all the carbon contamination from the surface of a body consisting of GaAs, GaP, GaInP, InSB, InAs and GaSb. The body is introduced into a vacuum system, and is heated between 550 and 680.degree.C for at least 10 minutes in the presence of water vapour while the pressure in the vacuum system is between 10-5 and 0.5 x 10-6 Torr. The method can remove several monolayers of carbon, the residual carbon after such a cleaning treatment amounting to a few % of a monolayer. The method is particularly suitable for cleaning substrates to be used for making photocathodes or on which a layer is to be deposited by molecular beam epitaxy.