СИСТЕМА, УСТРОЙСТВО И СПОСОБ ИЗМЕРЕНИЯ ВНУТРЕННЕЙ ОГНЕУПОРНОЙ ФУТЕРОВКИ СОСУДА

Группа изобретений относится к устройствам, способам и системам, а более конкретно к устройствам, процессам, механизмам и методам для определения параметров внутренней огнеупорной футеровки металлургических сосудов. Узел 10 сканера, выполненный с возможностью установки на рычаге 82 манипулятора сканера для размещения в непосредственной близости от отверстия в сосуде или вставки в отверстие в сосуде, а также для измерения расстояния от излучателя/датчика 40 внутри узла 10 сканера до множества точек поверхности огнеупорной футеровки для определения параметров вогнутой внутренней поверхности сосуда за одно сканирование. Манипулятор сканера, имеющий рычаг манипулятора и прикрепленный к узлу сканера, удерживает узел сканера в положениях для измерения. Система управления управляет положением узла сканера, положением излучателя/датчика и сбором, хранением, обработкой и представлением результатов измерений, генерируемых излучателем/датчиком. Поле обзора, полученное от узла 10 сканера за одно сканирование ...

СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ ПЛЕНОК НА ПОДЛОЖКЕ

Способ измерения толщины пленок на поверхности материала подложки включает облучение поверхности оптическим излучением, перестройку длины волны излучения, регистрацию отраженного от поверхности сигнала с последующим анализом зависимости интенсивности отраженного сигнала от длины волны, характеризующей толщину пленки. Причем зависимость интенсивности отраженного сигнала от длины волны аппроксимируют функцией, представляющей собой коэффициент отражения трехслойной системы воздух - материал пленки - материал подложки, вычисляют параметры аппроксимации и определяют толщину пленки по параметрам аппроксимирующей функции. Технический результат - уменьшение появления ошибок при измерениях в условиях влияния внутренних и внешних помех. 1 ил., 1 табл.

СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИН НАНОМЕТРОВЫХ СЛОЕВ МНОГОСЛОЙНОГО ПОКРЫТИЯ, ПРОВОДИМОГО В ПРОЦЕССЕ ЕГО НАПЫЛЕНИЯ

Изобретение относится к вакуумной технике, а именно к установкам для напыления многослойных покрытий нанометровой толщины, используемых, например, в качестве спектральных фильтров для оптических приборов в приборостроении, и может быть использовано для напыления покрытий со строго заданной толщиной и полосой пропускания оптического спектра. Заявляется способ измерения толщин нанометровых слоев многослойного покрытия, проводимого в процессе его напыления, включающий измерение спектра пропускания нанесенного на контрольную подложку покрытия в широком спектральном диапазоне и вычисление толщины напыляемого слоя. Новым является то, что в качестве контрольной подложки используют подложку с предварительно нанесенным слоем достаточной толщины, чтобы в спектральной зависимости отражения и/или пропускания от подложки с предварительно нанесенным слоем появился хотя бы один локальный экстремум или хотя бы одна точка перегиба, при этом само измерение толщины слоя может быть проведено как в режиме измерения ...

СИСТЕМЫ И СПОСОБЫ ПРИМЕНЕНИЯ МЕТРОЛОГИИ ПРИ АБСОРБЦИОННОМ ФОРМИРОВАНИИ ИЗОБРАЖЕНИЯ ДЛЯ ИЗМЕРЕНИЯ ТОЛЩИНЫ ОФТАЛЬМОЛОГИЧЕСКИХ ЛИНЗ

Способ измерения толщины офтальмологической линзы включает обеспечение формирующего оптического элемента, имеющего выпукло-изогнутую верхнюю поверхность; записывание эталонного значения интенсивности в указанный формирующий оптический элемент; формирование офтальмологической линзы, имеющей светопоглощающий компонент, на указанной выпукло-изогнутой верхней поверхности формирующего оптического элемента; пропускание света через указанную офтальмологическую линзу, после чего указанный светопоглощающий компонент поглощает часть указанного света при прохождении указанным светом через офтальмологическую линзу; применение света, прошедшего через офтальмологическую линзу, для создания цифрового изображения для указанной офтальмологической линзы, имеющего данные пиксельной интенсивности, которые соответствуют форме указанной офтальмологической линзы; применение информации об указанном свете перед его пропусканием через указанную офтальмологическую линзу, указанном светопоглощающем компоненте указанной ...

ЭЛЛИПСОМЕТР

... 1. Эллипсометр, включающий плечо поляризатора, формирующее световой луч заданного состояния поляризации и направления, и плечо анализатора, в котором осуществляется измерение состояния поляризации входящего в него светового луча, отраженного от исследуемого образца, отличающийся тем, что исследуемый образец укреплен неподвижно, при этом эллипсометр снабжен системой развертки его светового луча, выполненной в виде совокупности зеркал, установленных с возможностью перемещения и/или вращения для обеспечения падения светового луча в необходимое место на поверхности образца под необходимым углом и попадание отраженного от исследуемого образца светового луча в плечо анализатора.2. Эллипсометр по п.1, отличающийся тем, что плечо поляризатора и плечо анализатора укреплены неподвижно.3. Эллипсометр по п.1, отличающийся тем, что плечо поляризатора и плечо анализатора могут быть укреплены с возможностью перемещения.

УСТРОЙСТВО ДЛЯ ИЗМЕРЕНИЯ ВЕЛИЧИНЫ ИЗНОСА И ТЕМПЕРАТУРЫ ИЗДЕЛИЯ ПРИ ТРЕНИИ

... 1. Устройство для измерения величины износа и температуры изделия при трении, содержащее последовательно соединенные широкополосный источник непрерывного лазерного излучения, циркулятор, и, как минимум, один измерительный волоконно-оптический световод, второй конец которого предназначен для размещения в изделии на глубине равной или меньшей расстояния до трущейся поверхности и в котором сформирован внутриволоконный оптический датчик величины износа и температуры изделия при трении на основе брэгговской решетки, а также последовательно соединенные, как минимум, один передающий волоконно-оптический световод, детектор и контроллер определения величины износа и температуры изделия при трении, причем первый конец передающего волоконно-оптического световода соединен со вторым выходом циркулятора, отличающееся тем, что на конце отрезка измерительного волоконно-оптического световода, предназначенного для размещения в изделии, последовательно первому внутриволоконному оптическому датчику величины ...

МНОГОКАНАЛЬНЫЙ ОПТИЧЕСКИЙ МОНОХРОМАТОР

Предлагаемое техническое решение относится к области измерительной техники и может найти широкое применение при различных спектрометрических измерениях, в частности при определении оптических параметров тонких пленок. Целью создания нового технического решения является расширение функциональных возможностей монохроматора. Поставленная цель достигается тем, что в монохроматоре, содержащем конденсор 1, входную сменную щель 2, зеркала 3 и 5, дифракционную решетку 4 и пластинку с выходной щелью, вместо пластинки с одной выходной щелью постоянной ширины используется пластинка 6 с несколькими выходными щелями 7 постоянной ширины. Количество выходных щелей, их ширина и расстояние между щелями определяется решаемой спектрометрической задачей.

ОПТИЧЕСКИЙ СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ ПРОЗРАЧНЫХ ОБЪЕКТОВ

Способ включает формирование лазерного излучения, направляемого с помощью зеркала на объект измерения. Диффузное отражение от передней и задней стенок объекта «собирается» конденсором, один фокус которого располагается внутри «тела» объекта, а другой - на чувствительной площадке фотодиода (pin-фотодиода). Период запуска лазера первоначально устанавливают равным его начальному периоду плюс время задержки фронта нарастания сигнала с фотодиода, отсчитанное от фронта нарастания сигнала запуска лазера. Затем производят измерение этого периода методом его умножения и заполнения образованного временного интервала импульсами генератора стандартной частоты. Затем таким же методом измеряют начальный период запуска лазера, рассчитывают разность измеренных периодов, этим определяют время задержки фронта нарастания сигнала с фотодиода, отсчитанное от фронта нарастания сигнала запуска лазера. Таким же методом рассчитывают время задержки фронта спада сигнала с фотодиода, отсчитанное от фронта спада сигнала ...

СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ ТОНКОГО СЛОЯ ПРОЗРАЧНОЙ ЖИДКОСТИ

Изобретение относится к оптическим способам измерения толщины слоя прозрачной жидкости. В способе используется явление термокапиллярной конвекции, которая возбуждается лазерным излучением в слое жидкости. За счет конвекции поверхность жидкости деформируется в виде углубления в области падения лазерного луча. Отраженный от углубления луч лазера формирует интерференционную картину. Толщину слоя жидкости определяют по минимальному диаметру интерференционной картины. Способ позволяет повысить точность, расширить диапазон и упростить схему измерения толщины слоев оптической прозрачной жидкости. 2 ил.

СПОСОБ ОПРЕДЕЛЕНИЯ ТОЛЩИНЫ ТОНКОЙ ПРОЗРАЧНОЙ ПЛЕНКИ

Изобретение относится к области оптико-физических измерений, основанных на эллипсометрии, и предназначено для определения толщины тонких прозрачных пленок. Способ заключается в измерении эллипсометрических параметров Δ и Ψ с последующим фиксированием результатов измерения в плоскости в виде кривой, при этом у предварительно спрессованного металлического порошка определяют эллипсометрические параметры Δ и Ψ, результаты измерений которых наносят на плоскость, в которой расположены кривые, содержащие фиксированные результаты измерения эллипсометрических параметров Δ и Ψ порошка соответствующего металла, предварительно спрессованного, с заранее заданными оптическими параметрами, полученные с использованием ряда значений заданных оптических параметров упомянутого порошка, задаваемых изменением величины объемной доли активного металла с определенным шагом. Изобретение позволяет определять оксидной пленки, образующейся на поверхности порошка металла, а также объемную долю активного металла. 4 ...

ДИСТАНЦИОННЫЙ СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ ТОЛСТЫХ ПЛЕНОК НЕФТЕПРОДУКТОВ НА ПОВЕРХНОСТИ ВОДЫ

Дистанционный способ измерения толщины толстых пленок нефтепродуктов на поверхности воды включает облучение поверхности воды оптическим излучением на трех специальным образом выбранных длинах волн зондирования, регистрацию отраженного от поверхности сигнала и последующее определение толщины пленки по результатам измерения отраженного от поверхности сигнала на трех длинах волн зондирования. Для определения толщины пленки d длины волн зондирования λ1, λ2, λ3 выбирают из условий: где n2(λ1), n2(λ2) - показатели преломления нефтепродукта на длинах волн λ1, λ2; λ3 равна длине волны максимума поглощения нефтепродукта. Технический результат - определение толщин пленок более 4-5 мкм. 2 ил.

Способ измерения толщины пространственной пленки жидкости

УСТРОЙСТВО ДЛЯ ИЗМЕРЕНИЯ ТОЛЩИНЫ СТЕНКИ ЕМКОСТИ

... 1. Устройство для измерения толщины стенки (3) прозрачных или полупрозрачных емкостей (2), ограниченной наружной поверхностью (5) и внутренней поверхностью (6), содержащее:источник света (8), создающий световой пучок (9), направленный так, чтобы он попадал на наружную поверхность (5) стенки (3) с углом падения таким, чтобы часть светового пучка отражалась от наружной поверхности (5) стенки, и часть светового пучка преломлялась в стенке, а затем отражалась от внутренней поверхности (6) стенки,световой датчик (14) размера (Ci), установленный в плоскости регистрации и улавливающий свет, для его преобразования в электрические сигналы,оптическую систему (15) в указанной плоскости регистрации светового датчика (14) для улавливания и фокусирования световых пучков, отраженных от внешней и внутренней поверхностей стенки,процессор (17), соединенный со световым датчиком (16) и выполненный с возможностью определения толщины стенки (3) исходя из электрических сигналов, передаваемых световым датчиком ...

СПОСОБ УДАЛЕННОГО КОНТРОЛЯ ФОРМЫ ПОВЕРХНОСТИ И ТОЛЩИНЫ ПОКРЫТИЙ, ПОЛУЧАЕМЫХ В ПРОЦЕССЕ МАГНЕТРОННОГО ВАКУУМНОГО НАПЫЛЕНИЯ, И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к области прецизионных оптических средств контроля формы поверхности объектов в процессе их технологической обработки или функционирования. Восстановление абсолютного трехмерного профиля всей поверхности осуществляется по серии данных относительных измерений фаз интерферограмм. Процесс измерения фаз интерферограмм повторяют при выполнении взаимных смещений и поворотов пучков двулучевого фазосмещающего интерферометра относительно их первоначального направления. Толщину покрытия определяют путем вычисления разности абсолютных трехмерных профилей поверхностей: профиля, полученного до начала измерений (подложка без покрытия), и последующих профилей (подложка с нанесенным покрытием). Технический результат - получение абсолютного трехмерного профиля поверхности (карты высот) и толщины покрытия, наносимого на контролируемую поверхность, без использования референсной (опорной) поверхности с больших расстояний с нанометровой точностью в процессе технологической обработки. 2 ...

СПОСОБ АУТЕНТИФИКАЦИИ ПОЛИМЕРНОЙ ПЛЕНКИ

... 1. Способ аутентификации полимерной пленки, содержащий этап, на котором измеряют толщину слоя внутри этой пленки путем интерферометрии с белым светом. ! 2. Способ по п.1, в котором упомянутое измерение выполняется на центральном слое пленки. ! 3. Способ аутентификации полимерной пленки, содержащий этап, на котором измеряют двойное лучепреломление центрального слоя внутри пленки. ! 4. Способ аутентификации полимерной пленки, содержащий этапы, на которых измеряют толщину слоя внутри пленки путем интерферометрии с белым светом и/или измеряют двойное лучепреломление центрального слоя внутри пленки. ! 5. Способ по п.4, в котором упомянутое измерение толщины выполняется на центральном слое пленки. ! 6. Способ по одному из пп.1, 3, 4, в котором измерение выполняется на более чем одном слое. ! 7. Способ по одному из пп.1, 3, 4, в котором измерение выполняется с использованием импульсного источника света. ! 8. Способ по одному из пп.1, 3, 4, в котором измерение выполняется с использованием расстроенного ...

СПОСОБ ИЗМЕРЕНИЯ ОПТИЧЕСКОЙ ТОЛЩИНЫ ПЛОСКОПАРАЛЛЕЛЬНЫХ ПРОЗРАЧНЫХ ОБЪЕКТОВ

... 1. Способ определения оптической толщины плоскопараллельных прозрачных объектов, заключающийся в освещении объекта плоскопараллельным пучком белого света и регистрации интерференции пучков, отраженных от двух поверхностей объекта, отличающийся тем, что вышеуказанные пучки преобразуют в два пространственно когерентных, распространяющихся в одном общем направлении под малым углом γ друг к другу, а затем в области переложения пучков с помощью пространственно-чувствительного многоэлементного фотоприемника регистрируют интерференционную картину, измеряют расстояние между центрами крайних полос δy и определяют оптическую толщину объекта tn0. 2. Способ по п.1, отличающийся тем, что преобразование вышеуказанных пучков осуществляют с помощью двухлучевого интерферометра, а оптическую толщину объекта tn0 определяют по формуле где γ - угол схождения пучков в двухлучевом интерферометре. 3. Способ по п. 1, отличающийся тем, что преобразование вышеуказанных пучков осуществляют на бипризму Френеля, а оптическую ...

СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ МЕТАЛЛИЧЕСКОЙ ПЛЕНКИ

Способ измерения толщины металлической пленки, включающий формирование ступенчатой структуры на поверхности пленки, высота которой равна толщине пленки, напыление на поверхность подложки со ступенькой слоя высокоотражающего металла и освещение пленки лучом лазера с известной длиной волны, отличающийся тем, что на измеряемой пленке формируют периодическую структуру из чередующихся непротравленных и протравленных на всю глубину пленки, вплоть до подложки полос одинаковой ширины, затем после удаления фоторезиста напыляют на полученный рельеф вторичную отражающую пленку металла толщиной, достаточной для обеспечения непрозрачности этой вторичной пленки для зондирующего лазерного излучения, после чего облучают полученную рельефную структуру зондирующим лазерным пучком и в полученной отраженной дифракционной картине проводят измерение мощностей дифрагированных пучков нулевого Р0 и первого Р1, дифракционных порядков, после чего рассчитывают толщину исходной металлической пленки по формуле где h-толщина ...

СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИН НАНОМЕТРОВЫХ СЛОЕВ МНОГОСЛОЙНОГО ПОКРЫТИЯ, ПРОВОДИМОГО В ПРОЦЕССЕ ЕГО НАПЫЛЕНИЯ

... 1. Способ измерения толщин нанометровых слоев многослойного покрытия, проводимого в процессе его напыления, включающий измерение спектра пропускания нанесенного на контрольную подложку покрытия в широком спектральном диапазоне и вычисление толщины напыляемого слоя, отличающийся тем, что в качестве контрольной подложки используют подложку с предварительно нанесенным слоем достаточной толщины, чтобы в спектральной зависимости отражения и/или пропускания от подложки с предварительно нанесенным слоем появился хотя бы один локальный экстремум или хотя бы одна точка перегиба, при этом само измерение толщины слоя может быть проведено как в режиме измерения спектра отражения, так и в режиме измерения спектра пропускания.2. Способ по п.1, отличающийся тем, что для каждого распыляемого материала используют отдельную контрольную подложку.3. Способ по п.1, отличающийся тем, что для каждого распыляемого материала используют несколько отдельных контрольных подложек.4. Способ по п.1, отличающийся тем, ...

БЕСКОНТАКТНЫЙ ОПТИЧЕСКИЙ СПОСОБ ИЗМЕРЕНИЯ ТОЛЩИНЫ ПРОЗРАЧНЫХ МАТЕРИАЛОВ

Способ предназначен для дистанционного измерения толщины стенок изделий из стекла, кварца и других прозрачных материалов, показатель преломления которых неизвестен. Целью изобретения является повышение точности измерений за счет устранения влияния показателя преломления материала на результаты измерений. Для этого от источника направляют на измеряемый образец не менее двух пересекающихся на образце пучков излучения под углами большими 0 и меньшими 90o. Оптической системой строят в плоскости фотоприемного устройства не менее двух пар изображений, образованных пучками, отраженными от наружной и от внутренней поверхностей образца. Одновременно сканируют полученные изображения, определяют расстояние между ними и вычисляют толщину образца. 1 ил.

СПОСОБ ПОВЫШЕНИЯ ТОЧНОСТИ ИЗМЕРЕНИЯ ГЕОМЕТРИЧЕСКИХ ХАРАКТЕРИСТИК ПРОТЯЖЕННЫХ НЕПРЕРЫВНЫХ ОБЪЕКТОВ

Способ контроля толщины пленки в процессе ее нанесения

Изобретение относится к оптическому приборостроению и предназначено для неразрушающего контроля толщин слоев при изготовлении покрытий на оптических деталях . Цель изобретения - повышение точности нанесения пленки за счет точного определения момента прекращения ее нанесения . Пучок излучения с длиной Я волны падает на контролируемый образец (подложку ) под углом р , до и в процессе нанесения пленки регистрируют интенсивность отраженного от образца линейно поляризованного излучения. При этом длинуД волны излучения и угол (р освещения образца выбирают из условия d doK, где d - заданная толщина пленки; К 1,2,... - коэффициент; do Я /2Vn2 - s i ffy , где n - показатель преломления материала пленки. Момент прекращения процесса нанесения пленки определяют по достижению К-й кратности равенства интенсивности отраженного линейно поляризованного излучения до и в процессе нанесения пленки. 1 ил. сл С ...

Устройство для напыления пленок

Изобретение относится к радиоэлектронной технике и может быть использовано при изготовлении микросхем, в лазерной технике при напылении материалов на кристаллы . Цель изобретения - воспроизводимость напыляемых пленок по толщине и повышение точности контроля. Устройство содержит датчик, выполненный в виде кварцевого резонатора с измерителем частоты, датчик с прозрачным для светового потока свидетелем, установленным с возможностью калибруемого равномерного его движения и снабженным стационарным экранам со щелью, испаритель с его блоком питания, источник светового потока, фотоприемник с усилителем, блок обратной связи между усилителем фотоприемника и блоков питания испарителя. В устройстве кварцевый резистор установлен в области размещения подложек в качестве маркера сигнала фотоприемника и снабжен заслонкой с приводом, блок обратной связи выполнен в виде тиристорного устройства, введены регулятор движения свидетеля, за- датчик маркировочного сдвига частот, реле времени, реле заслонки, масштабный ...

Устройство для измерения толщины слоя жидкости на поверхности твердого тела

Способ измерения толщины диэлектрического слоя на поверхности полупроводника

Изобретение относится к измерительной технике и может быть использовано в твердотельной электронике для измерения толщины диэлектрического слоя на поверхности полупроводника. Цель изобретения - повышение точности измерения толщины диэлектрического слоя, удовлетворяющего соотношению ΔD/D≤0,01, где D - толщина контролируемого слоя ΔD - отклонение толщины от номинального значения, с коэффициентом α поглощения - достигается за счет повышения отношения сигнал:шум. Образец облучают монохроматическим пучком света с длиной волны, для которой удовлетворяет условие 1*98A*98105CM-1, гдЕ Α - КОэффициЕНТ пОглОщЕНия МАТЕРиАлА диэлЕКТРичЕСКОгО СлОя. ИзМЕРяюТ иНТЕНСиВНОСТь R света, отраженного от поверхности диэлектрического слоя, коэффициент α поглощения, показатели N1и N2преломления материалов диэлектрического слоя и полупроводника соответственно и, используя выражение D = (1/2Α)LN[(RR1- 2R1+ 1)R2/(R - R1)], где R1= [(N - 1)/(N1+ 1)]2 R2= [(N2- N1)/(N2+ N1)]2, определяют толщину D контролируемого диэлектрического ...

Способ регистрации слоистой структуры листового стекла

Способ контроля кристаллических пластин интерференционно-поляризационных фильтров в процессе их доводки

Устройство для измерения расстояния до объекта

Изобретение относится к измерительной технике и может быть использовано при измерении линейных размеров объектов, в частности для бесконтактного определения смещений обьекта от номинального положения . Целью изобретения является повышение точности измерений за счет регистрации нулевого положения по разностному сигналу. Пучок монохроматического излучения от источника 2 фокусируется объективом 1 на поверхность обьекта 16. Часть отраженного излучения формирует информационный пучок, который попадет на входную грань призменного блока 7, на выходе которого формируется электрический сигнал , характеризующий угловое отклонение пучка от базового направления. Этот сигнал направляется на зход привода 13. Привод 13 перемещает объектив 1 до совмещения его фокальной плоскости с поверхностью обьекта 16 В момент совмещения с выхода преобразователя 3 снимается нулевой сигнал , привод 13 останавливается и на индикаторе 15 положения считывается измеряемая величина 3 з.п. ф-лы, 3 ил. (Л ...

Прибор для измерения толщины прозрачных пластин

Способ измерения перемещения непрозрачной поверхности объекта в направлении ее нормали

Способ бесконтактного измерения толщины прозрачного листового материала в процессе производства

Прибор для измерения толщины льда

Оптический толщемер

Способ контроля толщин двухслойных диэлектрических пленок

Устройство для контроля толщины пленок

Устройство для измерения толщины тонких прозрачных пленок

Устройство для контроля толщины напыленного слоя

Способ измерения толщины окисной пленки

Способ определения плотности оболочки кокона

Изобретение относится к текстильной промышленности и может использоваться для контроля плотности оболочки кокона в процессе обработки. Целью изобретения является повышение точности измерения за счет исключения влияния куколки кокона. Способ основан на облучении вращающегося с синхронной скоростью кокона. При вращении кокона под воздействием центробежной силы куколка занимает среднее положение. Облучение незатененного кукол-кой участка кокона позволяет повысить точность контроля. Величину плотности определяют по доли излучения , прошедщего через незатененный участок кокона. 1 ил. (Л с оо о 00 00 со ОС ...

Устройство для измерения геометрических размеров объекта

Изобретение относится к измерительной технике и может быть использовано при измерении линейных размеров протяженных объектов, в частности для бесконтактного оптического контроля геометрической толщины таких оптических деталей, как линзы со сферическими и асферическими поверхностями, плоскопараллельные пластины, светофильтры волоконно-оптические щайбы. Цель изобретения - повышение точности, надежности измерения и расширение номенклатуры S ...

Устройство для измерения толщины стенок прозрачных труб

Изобретение относится к измерительной технике. Цель изобретения - повьппение точности и сохранение непрерывности производимых измерений за счет обеспечения независимости сигнала фотоприемника. В результате отражения света от наружной и внутренней поверхностей трубы образуются два отраженных световых пучка. Прием- объектив 6 переносит изображение в плоскость измерительной щели 9. Диафрагма 7 ограничивает апертуру пучков , проходящих через приемный объектив 6. Этим исключается влияние искажения изображения щели контролируемой трубой. Цилиндрический объектив В, имеющий увеличение в направлении, перпендикулярном измерительной щели, увеличивает изображение щели 3 до такой длины, чтобы при смещениях трубы оно не выходило за пределы измерительной щели. Установленный за щелью развертьшающий элемент 10 формирует на входе фотоприемника 11 два коротких световьгх импульса, временной интервал между которыми пропорционален толщине стенки трубы 5. € (Л оо 4: 00 05 СО СО ...

Способ дистанционного контроля толщины нефтяной пленки на поверхности воды

СПОСОБ ДИСТАНЦИОННОГО КОНТРОЛЯ ТОЛЩИНЫ НЕФТЯНОЙ ПЛЕНКИ НА ПОВЕРХНОСТИ вода, заключающийся в том, что облучают нефтяную пленку в точке измерения монохроматическим лучом , измеряют интенсивность отраженного луча, изменяют толщину нефтяной пленки редукторОМ, регистрируют при этом экстремумы интенсивности отраженного луча, изменяют толщину нефтяной пленки редуктором, регистрируют при этом экстрему интенсивности отраженного луча и определяют толщину пленки, отличающийся тем, что, с целью повышения производителБности конт .роля, в качестве редуктора используют луч света, интенсивность которого превышает интенсивность монохроматического луча, облучают лучом света поверхность нефтяной пленки в той же точке измерения до ее исчезновения, при этом регистрируют число и четность числа экстремумов , а толщину пленки определяют по формуле li«ti +(Ы-1}Л/4п, V -V н мин где Ьо Л/4п 1-макс мии при N - четном V - V н мин. i ь макс мин Nнечетном , при Л длина волны монохрс 1атического луча, мкм; ппоказатель ...

Устройство для контроля толщины пленок в процессе нанесения

Изобретение относится к измерительной технике. Цель изобретения - повьпиение производительности и точности контроля пленок сублимируемых вакуумных резистов за счет исключения неконтролируемых периодов времени, необходимых для перемещения свидетеля, и исключения систематических ошибок, возникающих за счет неконтролируемого роста пленки ре- зиста под диафрагмой. Излучение от/ источника 1 света направляется на 1 свидетель 2. Отраженное от свидетеля 2 излучение направляется на фотоприемник 3 и преобразуется в электрический сигнал, который поступает на блок 4 регистрации интерференционных экстремумов. При достижении пленкой толщины, равной заданному значению, блоком 4 регистрации выдаются одновременно сигнал разрешения нагрева на управляющий вход блока 5 импульсного нагрева и сигнал на смену подложек. С блока 5 импульсного нагрева вьщается импульс тока, разогревающий нагревательный элемент 6. Свидетель 2, находящийся в контакте .с нагревательным элементом 6, нагревается до температуры сублимации ...

Способ определения толщины слоя на подложке

Изобретение относится к измерительной технике и предназначено для определения толщины и качества нанесения анодированного слоя на алюминиевую ленту. Цель изобретения - определение толщины и качества анодированного слоя на алюминиевой ленте - достигается путем увеличения интенсивности окраски интерференционной картины. На поверхность анодированного слоя наносят слой диэлектрика, толршна которого определяется экспериментально , и полупрозрачный слой металла с толщиной, определяемой экспериментально , создавая тем визуально размельченную интерференционную окраску поверхности анодкро- ванного слоя, по которой определяют толщину и качество нанесения слоя. с SS ...

Устройство для контроля толщины плоских объектов

Изобретение относится к измерительной технике и может быть использовано для контроля толщины плоского проката и ленточных материалов. Цель изобретения - по- вышение точности и автоматизация контроля за счет исключения погрешности, связанной с нестабильностью ориентации контролируемого объекта в зоне контроля. Зондирующие пучки, направляемые зеркалами 3, 4 и 5, 6 на контролируемый объект перпендикулярно его поверхности, фокусируются оптическими фокусирующими системами 7 и 8. Увеличение изображения световых пятен на поверхности объекта с помощью фокусирующих систем 7 и 8 и приемных оптических систем проецируются на поверхность сканирующего блока 13, выполненного в виде сферического сегмента с радиальными прорезями и установленного по ходу отраженных от объекта пучков на расстоянии от фокальной плоскости фокусирующих систем, равным радиусу сферического сегмента, с возможностью вращения вокруг оси, проходящей через его радиус. В результате сканирования изображений световых пятен на выходах ...

Способ контроля формы профиля прозрачных осесимметричных тонкостенных оболочек

Изобретение относится к измерительной технике и может быть использовано в точном приборостроении для контроля формы прозрачных тонкостенных оболочек. Цель изобретения - повышение точности контроля и снижение брака от нарушения качества поверхности в процессе контроля. Контролируемую оболочку фиксируют в требуемом положении и контактным методом замеряют толщину оболочки в выбранной опорной точке. Затем формируют в проходящем свете интерферограммы участка контролируемой оболочки, центр которого совмещен с выбранной опорной точкой, и сравнивают полученную интерферограмму с ранее сформированной интерферограм- мой участка эталонной оболочки и вычисляют значения толщин оболочки в промежуточных точках участков по формуле t (tK + -г- )cos OK , где tK - значение толщины оболочки, измеренное контактным методом, N - номер интерференционной полосы на текущей интерферограмме; Я- длина волны излучения в интерферометре; а - угол, под которым наблюдают каждую интерференционную полосу из центра оболочки ...

Способ оптического определения толщины пленок лакокрасочных покрытий с помощью двойного микроскопа

Способ контроля и отбраковки оптических поверхностей

Изобретение относится к испытательной технике и позволяет проводить контроль и отбраковку ситал- ловых элементов, прошедших гидролитическую обработку перед соединением их путем оптического контакта. Предварительно гидролитически обработанные поверхности ситалловых элементов обдувают нагретым водяным паром, конденсируют его на поверхности путем обеспечения разности температур между контролируемыми элементами и паром, наблюдают на поверхности элементов сформированные при конденсации на их поверхности водяного пара характерные спиральные и кольцевые фигуры и по наличию или отсутствию на их поверхностях этих фигур судят о деталях, прошедших гидролитическую обработку. с ...

Способ определения разнотолщинности прозрачной в видимой области спектра пленки, нанесенной на отражающую подложку

Способ измерения толщины прозрачных пластин

Устройство для контроля толщины тонких пленок,наносимых на подложку

УСТРОЙСТВО ДЛЯ КОНТРОЛЯ ТОЛ|ЩИНЫ ТОНКИХ ПЛЕНОК, наносимых на подложку, содержащее последовательно расположенные источник излучения, коллимкрующую линэу и карусель для размещения подложек и последовательно установленные монохроматизирующий элемент, фотоприемник/ усилитель и индикатор, отличающееся тем, что, с целью расширения технологических возможностей, оно снабжено параболото{я1ческим фоконом, установлённьм между монохроматиэирующим элементе и фотоприемникси«1, выходное отверстие фокона совмещено с входным окном фотопри@4Ника. (Л 1C О5 ...

Способ контроля оптических толщин слоев при нанесении на подложку многослойных покрытий

Изобретение относится к измерительной технике, к контролю оптических толщин отдельных слоев в процессе нанесения многослойных интерференционных покрытий оптическими методами. Цель изобретения - повышение информативности за счет расширения диапазона контролируемых показателей преломления и спектрального диапазона слоев и подложки. Для этого, исходя из отношения показателей преломления наносимых слоев и рабочей длины волны покрытия, прекращают нанесение первого, второго и третьего /J=1,2,3/ слоев при достижении потоком излучения величины, определяемой толщиной слоев и показателем преломления, а нанесение последующих слоев прекращают при достижении потоком излучения величины, равной величине прошедшего или отраженного излучения через подложку с нанесенными первыми J-слоями.

Прибор для измерения толщины зеркального стекла

Устройство для измерения толщины прозрачного пленочного покрытия на изделии

Устройство для измерения расстояния до объекта

Изобретение относится к измерительной технике и может быть использовано для измерения линейных размеров и перемещения объектов. Цель изобретения - повышение точности за счет увеличения углового смещения пучка лучей при изменении положения контролируемого объекта путем использования призменного блока. Узкий пучок лучей источника 1 коллимированного излучения направляется объективом 2 на поверхность контролируемого объекта 8, отражается от него и выходит из объектива 2 с угловым отклонением ε относительно оптической оси устройства при смещении контролируемого объекта 8 относительно фокальной плоскости объектива 2. Затем пучок лучей проходит через призменный блок 3, после которого отклоняется на угол γε где ε - угловое увеличение блока 3. Фотоэлектрический преобразователь 4 регистрирует угловое положение пучка лучей. Сигнал с выхода преобразователя 4 поступает на вход блока 5 обработки. Сигнал с выхода блока 5 обработки поступает на вход привода 6 перемещения объектива 2, который обеспечивает ...

Способ измерения толщины слоев полупроводниковых материалов

Бесконтактный измеритель толщины листового стекла

Мера толщины покрытия

Устройство для определения толщины смазочного слоя между тяжелонагруженными вращающимися деталями

Способ измерений толщины покрытий

Способ измерения толщины тонких прозрачных пленок

Способ контроля толщины покрытия материалов

Способ контроля толщины кристаллических пластин

Устройство для контроля поперечного размера движущихся изделий

Способ бесконтактного измерения толщины стенки прозрачного тела, имеющего однонаправленную полосность поверхностей стенки

Verfahren zur Probenherstellung

Verfahren zur Messung der Schlackenschichtdicke auf einer Metallschmelze sowie zur Durchführung des Verfahrens geeignete Vorrichtung

Verfahren und Gerät zum Messen einer geringen Schritthöhe

OPTISCHES DICKENMESSGERAET

Verfahren zur Herstellung eines optischen Elements

OPTOELEKTRONISCHER ABSTANDSSENSOR.

VORRICHTUNG FÜR OPTISCHE ABBILDUNG UND MESSUNG

System zum Einteilen von Gegenständen und Vorrichtung zur Messung der Abmessungen eines Gegenstandes

END POINT DETECTION METHOD

Verfahren und Vorrichtung zum Ermitteln einer Schichtdickenverteilung bei Solarzellen

Ein Verfahren zum Ermitteln einer lokalen Schichtdicke einer Schicht (20) einer Solarzelle (30) umfasst die folgenden Schritte: Belichten (S110) zumindest eines Abschnittes der Schicht (120) der Solarzelle (30) mit einer Strahlungsquelle (110), um zumindest einen Abschnitt der Solarzelle (30) zu erwärmen; Erfassen (S120) einer thermischen Strahlung (40) als Resultat der Belichtung (S110) des Abschnittes der Solarzelle (30); und Ermitteln (S130) der lokalen Schichtdicke der Schicht (20) basierend auf der erfassten thermischen Strahlung (40).

REGENSCHUTZSCHIENE FUER FENSTER.

IR thickness gauge for rapidly moving coated foils - has isothermal back body radiator and absorption pyrometer detecting radiation through coating

The infra-red thickness gauge for coated foils comprises a black-body radiator and an electronic pyrometer. The plastic-coated metal foil can be conveyed at high speed through rollers (10, 11) in close proximity to a hemispherical, isothermal i.r. source (17). The hemispherical space is held at a temp. in the region of 316 deg. C by a thermostatic control (16) and emits i.r. radiation of around 3.4 Microns. The radiation passing through the coating is reflected by the surface of the substrate back through the coating and through a narrow opening (18) in the dome of the radiator. An electronic pyrometer (8) suitably calibrated, detects the radiation and from the absorption due to the coating, the thickness can be determined.

VORRICHTUNG ZUR IDENTIFIKATION VON UNTERSCHIEDLICHEN HALBLEITERSCHEIBEN.

The device is used to identify the different semiconductor wafers (13,14) within a supply batch, to allow the wafers not belonging to the overall group to be sorted out. It uses a mechanical gauge cooperating with the transported batch, with slits (10) for detecting the different semiconductor wafer thicknesses and/or an IR transmission measuring device, for sorting the wafers in dependence on their band gaps. Pref. the IR transmission measuring device uses optical fibres with their ends inclined at 45 degrees to the optical axis for deflection of the IR radiation through 90 degrees, the different band gaps used to differentiate between gallium arsenide semiconductor wafers and silicon semiconductor wafers.

VERFAHREN UND VORRICHTUNG ZUR MESSUNG ODER BESTIMMUNG EINER ODER MEHRERER EIGENSCHAFTEN ODER DER IDENTITAET EINER PROBE.

PHOTOTHERMISCHES UNTERSUCHUNGSVERFAHREN, EINRICHTUNG ZU SEINER DURCHFUEHRUNG UND VERWENDUNG DES VERFAHRENS

Verfahren und Vorrichtung zur Dünnschichtdickenmessung

Banddickenmessgerät und Verfahren zur Durchführung einer Banddickenmessung

Dargestellt und beschrieben ist ein Banddickenmessgerät und ein Verfahren zur Durchführung einer Banddickenmessung. Aufgabe der Erfindung ist es, ein neues Banddickenmessgerät zu schaffen, bei dem diese Messfehlerquelle ausgeschaltet wird und damit eine noch höhere Genauigkeit unabhängig von der Oberfläche des zu vermessenden Materials erreichbar ist. Die Lösung der Aufgabe besteht zum einen darin, dass das Banddickenmessgerät eine Einrichtung zur Verstellung des Winkels zwischen der Mess- und Triangulationsebene der Laserabstandssensoren und einer Längsachse des Walzbandes aufweist, damit das Auftreffen von durch Oberflächenstrukturen des Walzbandes reflektiertem Laserlicht auf die Laserabstandssensoren vermieden wird und zum anderen darin, dass vor der ersten Messung die Mess- bzw. Triangulationsebene der Abstandssensoren so verdreht wird, das diese in einem Winkel von größer oder kleiner 90° zu einer Längsachse des Walzbandes angeordnet ist, damit das Auftreffen von durch Oberflächenstrukturen ...

Schichtdickenmessvorrichtung und Verfahren zur Schichtdickenmessung

Eine Schichtdickenerfassungsvorrichtung zum Messen einer Schichtdicke Hs einer mittels einer Baumaschine aufgebrachten Schicht umfasst eine Messeinheit sowie eine Berechnungseinheit. Die Messeinheit umfasst einen ersten und einen zweiten Distanzsensor, die zueinander mit einem bekannten Winkel gewinkelt angeordnet sind, wobei die Messeinheit gewinkelt in Bezug auf eine beliebige Senkrechte der Baumaschine in einer bekannten Höhe zu einer Grundebene, auf die die Schicht aufzubringen ist, angeordnet ist, so dass der erste Distanzsensor mit einem ersten Winkel gegenüber der Senkrechten auf die aufgebrachte Schicht zielt und ausgebildet ist, einen ersten Abstand zu selbiger zu ermitteln, und so dass der zweite Distanzsensor mit einem zweiten Winkel gegenüber der Senkrechten auf die aufgebrachte Schicht zielt und ausgebildet ist, einen zweiten Abstand zu selbiger zu ermitteln. Die Berechnungseinheit ist ausgebildet, um die Schichtdicke Hs ausgehend von der bekannten Höhe und dem bekannten Winkel ...

TESTGLASWECHSLER ZUR OPTISCHEN MESSUNG VON SCHICHTEIGENSCHAFTEN IN VAKUUMBESCHICHTUNGSANLAGEN

Verfahren zum Messen der Dicke eines Films.

Formbestimmungsvorrichtung

Eine Aufgabe der vorliegenden Erfindung besteht darin, eine Dickenverteilung präzise unter Verwendung eines einfachen Vorrichtungsaufbaus ohne Beeinträchtigung durch Schwingungen eines zu messenden Objektes zu messen. Bei der vorliegenden Erfindung wird für jede von den vorderen und den hinteren Oberflächen eines zu messenden Objektes 1 jeder der Lichtstrahlen aus dem Erhalt durch ein in zwei Strahlen erfolgendes Zerlegen eines emittierten Lichtstrahles aus einer Laserlichtquelle 2 weiter in zwei Strahlen zerlegt. Sodann werden die Lichtstrahlen an Bezugsoberflächen und Messpunkten 1a und 1b wechselseitig in einer vorderen und hinteren Beziehung reflektiert, sodass Nichtinterferenzlichtstrahlen Pax und Pbx aufgenommen werden, von denen jeder den Bezugslichtstrahl und den Objektlichtstrahl als wechselseitig orthogonale Polarisationskomponenten enthält. Sodann wird jeder Lichtstrahl in eine Mehrzahl zerlegt. An einem oder mehreren der zerlegten Lichtstrahlen wird eine Phasenverschiebung vorgenommen ...

SYSTEM ZUR AUTOMATISCHEN KONTROLLE DER DEPOSITION EINER SCHICHT IN REAL-ZEIT.

Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen

Handgeführte Vorrichtung zur optischen berührungsfreien Bestimmung der Dicke eines gewalzten Metallbandes

Handgeführte Vorrichtung (10) zur optischen und berührungsfreien Bestimmung der Dicke eines gewalzten Metallbandes (11), dadurch gekennzeichnet, dass die Vorrichtung (10) aus einem Gehäuse (21) mit Handgriff gebildet ist, das Gehäuse (21) mit einem C-förmigen Messbügel (24) versehen ist, der einen Einführspalt (23) für einen Randbereich eines gewalzten Metallbandes (11) aufweist und beidseitig des Einführspaltes (23) am Messbügel (24) jeweils eine Einrichtung (31) zur Abstandsmessung angeordnet ist, wobei die Einrichtung (31) zur Abstandsmessung mindestens eine Triangulationseinrichtung (34) und mindestens ein Mehrwellenlängen-Interferometer (31), eine Auswerte- und Steuereinheit (40), einen 3D-Beschleunigungsaufnehmer (42) und ein zusätzliches Mehrwellenlängen-Interferometer (32) zur Vermeidung von Messabweichungen bei thermischer Beeinflussung der Abmessungen des Messbügels (24) sowie zur Kompensation von Brechungsindexänderungen im Einführspalt (23) aufweist.

EINRICHTUNG FÜR OPTIMIERUNG DER DICKE EINER EISSCHICHT

Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen

Anordnung zum Bestimmen chrakteristischer Größen transparenter Schichten mit Hilfe der Ellipsometrie

Beurteilung einer Bump Höhe

Determining thickness of planar transparent body by triangulation - measuring offset of reflection point, fixed w.r.t beam source, due to refraction through body

A reflection point is arranged at a defined distance behind the body. An emission beam from the sensor passes to the reflection point at a defined angle to the body. The offset of the measurement point caused by refraction is measured at the receiver stage of the triangulation sensor. The thickness of the body is derived from the offset and the known refractive index of the material. USE/ADVANTAGE - Pref. for measuring thicknesses of transparent plane parallel films or plates using triangulation sensor with which previously only distance to transparent body was achievable.

Optoelektronische Vorrichtung

VORRICHTUNG ZUM MESSEN DER DICKE EINER BESCHICHTUNG AUF EINER UNTERLAGE

Anordnung zur Bestimmung von Schichtdickenänderungen

INDICATOR TO INDICATE THE DEPTH OF THE FAT LAYER ON AN ANIMAL CARCASS

Verfahren und Vorrichtung zum zerstörungsfreien Prüfen von Werkstücken

In-line metrology system

A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.

Precision solder resist registration inspection method

A method is disclosed for operating a machine vision inspection system to determine a fluorescent imaging height for acquiring a fluorescent image for repeatably determining the location of a feature within the fluorescent material. The height of an exposed workpiece portion exposed outside of the fluorescent material is determined (e.g., using a height sensor or autofocus operations). The determined height is repeatable. The exposed portion has a characteristic height relative to the fluorescent material and/or features located therein. The fluorescent imaging height, which may be inside the fluorescent material, is determined relative to the determined height of the exposed portion. The fluorescent imaging height is determined such that it enhances the detection of the desired feature located within the fluorescent material in the resulting fluorescent image. For a variety of workpieces, the method provides automatic acquisition of appropriately focused fluorescent image more reliably than previously known methods.

Method for measuring the film element using optical multi-wavelength interferometry

A method for measuring the film element using optical multi-wavelength interferometry is revealed. The invention uses reflection coefficients of thin films at different wavelengths to measure the thickness and optical constants of thin films. The phase difference coming from the phase difference between test and reference surfaces is distinguished from the phase difference from the spatial path difference between reference and test beams by doing measurements on different wavelengths, because they change in different ways as the measuring wavelength changes. The phase is then acquired. Combining with the measured reflectance of thin film, the reflection coefficient of thin film is obtained. Collecting the reflection coefficients of each point, the thin film thickness and optical constants distribution in 2 dimensions are calculated. The surface profile is known through the spatial path differences between reference and test beams. These can be measured in a interferometer to avoid the vibration influence.

Method and apparatus for performing film thickness measurements using white light scanning interferometry

The invention relates to a method and an apparatus for measuring the thickness of a transparent film by broad band interferometry, comprising the steps of preparing a correlogram of the film by an interferometer, applying a Fourier transformation to said correlogram to obtain a Fourier phase function, removing a linear component thereof, applying a second integral transformation to the remaining non-linear component to obtain an integral amplitude function of said non-linear component, identifying the peak location of said integral amplitude function and determining the thickness of the film as the double value of the abscissa at said peak location considering a refractive index of a film which is dependent on wavelength. The last two steps may be replaced by identifying the peak locations of said integral amplitude function and determining the thickness of the films as the double values of the abscissas at the peak locations.

Optical measuring device for monitoring a joint seam, joining head and laser welding head with same

An optical measuring device for monitoring a joint seam, joining head and laser welding head. The optical measuring device monitors a joining region in a workpiece and has at least one light-section device with a first light source for casting a light fan in the direction of the workpiece to be joined, making a triangulation light line within the joining region which intersects a joint seam. An illumination device with a second light source homogeneously illuminates the joining region. A first optical sensor with a first observation beam path for spatially resolved imaging of the triangulation light line is projected onto the joint seam. A second optical sensor with a second observation beam path for spatially resolved imaging of the joint seam is coaxially coupled with the first observation beam path. The readout rate of the first and second optical sensors is >1 kHz and <500 Hz, respectively.

Method for measuring height, non-transitory computer readable medium storing a program for measuring height, and height measuring apparatus

There are provided a method for measuring a height by a height measuring apparatus including: obtaining, in advance, a height correction value depending on an inclination angle of a surface of the object as an angle correction data; obtaining, from the height value of each pixel of the imaging device, the inclination angle of the surface of the object which corresponds to each pixel position of the imaging device; obtaining the height correction value, which corresponds to the inclination angle obtained, from the angle correction data; and correcting the height value of the surface of the object, which corresponds to each pixel of the imaging device, by using the height correction value obtained.

Method for evaluating thin-film-formed wafer

A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength λ is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner. 19-. (canceled)10. A method for evaluating a thin-film-formed wafer , the method being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate ,wherein light having a single wavelength λ is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution.11. The method for evaluating a thin-film-formed wafer according to claim 10 , wherein the wavelength λ is selected in such a manner that reflectance (R) of irradiation light calculated from a film thickness set value of the thin film of the thin-film-formed wafer becomes 0.2 or above and an absolute value of a reflectance fluctuation coefficient (ΔR/R) with respect to the film thickness of the thin ...

LEVEL SENSOR, LITHOGRAPHIC APPARATUS, AND SUBSTRATE SURFACE POSITIONING METHOD

A level sensor for measuring a position of a surface of a substrate includes a projection unit including an emitter for emitting a radiation beam towards the substrate and a projection grating including a measurement grating and an aperture, such that the radiation beam incident on the projection grating is divided into a measurement radiation beam and a capture radiation beam. The level sensor further includes a detection unit including a first and second measurement detector, a first and second capture detector, a detection grating, and a first and second optical unit. The detection grating includes a ruled grating with multiple rules, which direct radiation towards the first and second measurement detector via the first and second optical unit, and a capture element directing radiation towards the first and second capture detector via the first and second optical unit. 2. A level sensor according to claim 1 , wherein the first capture facet has the same orientation as the first measurement facet claim 1 , and wherein the second capture facet has the same orientation as the second measurement facet.3. A level sensor according to claim 1 , wherein the aperture and capture element are configured such that a width of the capture radiation beam is smaller than the width of the capture element claim 1 , such that the capture radiation beam is not able to illuminate the entire first and second capture facet.4. A level sensor according to claim 1 , wherein the radiation emitted by the light source comprises radiation having a wavelength of less than 400 nm.5. A level sensor according to claim 1 , wherein each rule of the multiple rules of the ruled grating of the detection grating comprises a third measurement facet claim 1 , wherein the detection unit comprises a third measurement detector and a third optical unit claim 1 , wherein the third measurement facet is configured to refract radiation of the measurement radiation beam incident on said third measurement facet ...

Level Sensor, a Method for Determining a Height Map of a Substrate, and a Lithographic Apparatus

The invention provides a level sensor configured to determine a height level of a surface of a substrate, comprising a detection unit arranged to receive a measurement beam after reflection on the substrate, wherein the detection unit comprises an array of detection elements, wherein each detection element is arranged to receive a part of the measurement beam reflected on a measurement subarea of the measurement area, and is configured to provide a measurement signal based on the part of the measurement beam received by the respective detection element, and wherein the processing unit is configured to calculate, in dependence of a selected resolution at the measurement subarea, a height level of the measurement subarea, or to calculate a height level of a combination of multiple measurement subareas.

INTERFERENCE OPTICAL SYSTEM, SUBSTRATE PROCESSING APPARATUS, AND MEASURING METHOD

The interference optical system includes a light source, a collimator, a light-receiving element, a tunable filter, and a calculation apparatus. The collimator emits measuring light from the light source to a first main surface of the object, and receives reflected light from the first main surface and a second main surface. The light-receiving element acquires an intensity of light from the collimator. The tunable filter sweeps a wavelength of the light incident to the light-receiving element. The calculation apparatus measures an interference intensity distribution that has wavelength dependence and is an intensity distribution of the reflected light from the first main surface and the second main surface, and measures the thickness or the temperature of the object based on a waveform obtained by Fourier transforming the interference intensity distribution. 1. An interference optical system for measuring a thickness or a temperature of an object which has a first main surface and a second main surface opposite to the first main surface , the interference optical system comprising:a light source which emits measuring light having a wavelength transmitting through the object;a collimator which is connected to the light source to emit the measuring light from the light source to the first main surface of the object, and receive reflected light from the first main surface and the second main surface;a single light-receiving element which receives the light from the collimator to obtain an intensity of the light;a sweeping unit which sweeps a wavelength of the light incident to the light-receiving element;is a spectrum acquisition unit which measures an interference intensity distribution that has wavelength dependence and is an intensity distribution of the reflected light from the first main surface and the second main surface, by using the sweeping unit and the light-receiving element; anda measuring unit which measures the thickness or the temperature of the object ...

Film thickness monitor

A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

HEIGHT-MEASURING METHOD AND HEIGHT-MEASURING DEVICE

A height-measuring device () in which the focal position of an image-forming optical system () is moved in relative fashion in the direction of an optical axis with respect to an object () to be measured; scanning is performed; images of the object () to be measured, which are formed by the image-forming optical system (), are obtained in order; and the focal position for individual pixels of the images is found, thereby yielding a relative height value of the object to be measured () at positions corresponding to the pixels; wherein a second function (g) is defined on the basis of a first function (f) fitted to a numerical value sequence comprising a coordinate value on the optical axis and a light intensity value for the pixels of a plurality of the images obtained by the scanning, or the coordinate value and a numerical value obtained by processing the light intensity value; and positions on the optical axis at which a correlation value between the numerical value sequence and the second function (g) becomes a maximum value or a minimum value serve as the relative height values of the object to be measured at the positions corresponding to the pixels. 1. A height-measuring method comprising: moving an optical system relative to be measured along an optical axis of the optical system; forming an image of the object to be measured on a surface; measuring a relative height of the object based on a change in brightness in the surface , andfinding a correlation between a first property indicative of the change in brightness with respect to the relative movement of the optical system based on a portion of the first property where the change in brightness with respect to the relative movement of the optical system is large and a second property indicative of the change in brightness with respect to the relative movement of the optical system, and finding the relative height based on the correlation.2. The height-measuring method according to claim 1 , further comprising ...

DEVICE FOR MONITORING THICKNESS REDUCTION OF INNER SURFACE IN HEAT TRANSFER TUBE OR INNER SURFACE IN EVAPORATION TUBE

There is provided a device for monitoring a thickness reduction of an inner surface in a heat transfer tube or an inner surface in an evaporation tube, the device including: a movement unit which moves along a fin tube; a laser measurement unit which is provided in the movement unit and measures the thickness reduction of the inner surface by a laser; a cable which includes a light guiding path for introducing a laser into the laser measurement unit and a light deriving path for transmitting reflected light; and a thickness reduction determining unit which compares the laser measurement data with past data or standard data and determines the current thickness reduction. 1. A device for monitoring a thickness reduction of an inner surface in a heat transfer tube or an inner surface in an evaporation tube comprising:a movement unit adapted to move along the inner surface in the heat transfer tube or the inner surface in the evaporation tube;a laser measurement unit provided in the movement unit for measuring the thickness reduction of the inner surface in the heat transfer tube or the inner surface in the evaporation tube by a laser;a cable including a light guiding path for introducing a laser into the laser measurement unit and a light deriving path for transmitting reflected light; anda thickness reduction determining unit for comparing data of the laser measurement unit with past data or standard data so as to determine the current thickness reduction, wherein 'a sensor head having a laser displacement sensor; and', 'the laser measurement unit includesa prism or mirror for shortening a focal distance of the laser,the laser measurement unit is configured to guide the laser emitted from the laser displacement sensor, emit the laser in a direction perpendicular to the inner surface, move a reflection surface of the laser by 360° in a peripheral wall surface and continuously read a position of the reflection surface through the laser displacement sensor, so as to ...

Systems For And Methods Of Characterizing The Thickness Profile Of Laminated Glass Structures

Systems for and methods of characterizing the thickness profile of laminated glass structures are disclosed, wherein the laminated glass structure has at least one gradual transition region between adjacent glass layers. The method includes sequentially focusing laser light at different focuses along a line within the laminated glass structure. The sequentially formed focuses define corresponding micro-volumes from which fluorescent light emanates due to a multiphoton process. The variation in the intensity of the detected fluorescent light from each micro-volume as a function of distance into the laminated glass structure is used to determine the relative locations of the multiple layers and the at least one gradual transition region. 1. A method of characterizing a thickness profile of a laminated glass structure having a first surface , a body comprising multiple layers and at least one gradual transition region between adjacent layers , comprising:focusing laser light of a first wavelength within the body of the laminated glass structure through the first surface at a surface location and sequentially at different focuses at different distances along a line into the body to cause an emission of fluorescent light of a second wavelength from respective micro-volumes within the body;detecting an intensity of the fluorescent light for each of the micro-volumes; anddetermining relative locations of the multiple layers and the at least one gradual transition region based on a variation in the intensities of the detected fluorescent light as a function of the focus distances.2. The method according to claim 1 , wherein the focuses have a diameter in a range from 1 micron to 10 microns.3. The method according to claim 1 , wherein the relative locations are determined to a resolution R in the range 0.5 micron R 5 microns.4. The method according to claim 1 , wherein each micro-volume has a volume in the range from 10 femtoliters to 3 claim 1 ,500 femtoliters.5. The method ...

Methods and apparatus for spectral luminescence measurement

One embodiment relates to a computer-implemented method of processing spectral luminescence mapping data obtained from a substrate, the substrate having an epitaxial layer stack that includes a multiple quantum well. A spectral luminescence and an epi thickness at a location on the substrate are obtained. A spectral modulation for the location may be computed given the epi thickness and material indices of refraction. The underlying luminescence spectrum may then be generated by dividing the measured spectral luminescence by the spectral modulation. Subsequently, a peak wavelength and other parameters may be obtained from the underlying luminescence spectrum. In another embodiment, the underlying luminescence spectrum may be determined, without the epi thickness measurement, using a self-consistent technique. Another embodiment relates to an apparatus for spectral luminescence mapping and epitaxial thickness measurement. Other embodiments, aspects and features are also disclosed.

SURFACE TREATMENT STATUS MONITORING DEVICE

A measurement light having a predetermined wavelength bandwidth from a light source is radiated onto the structure to be measured in a specimen light reflected from a first plane and second plane of the structure to be measured is made to interfere in an optical fiber, and a spectrum of the interference light is generated. This interference light spectrum is acquired by a spectrometric unit at two time points separated in time, and in data processing unit, absolute difference area computation unit determines the absolute difference area of the difference spectrum. This absolute difference area changes periodically each time the dimension of the structure to be measured changes by λ/4, making it possible to determine the dimension of the structure to be measured based on that change. 1. A surface treatment status monitoring device which measures a dimension of a structure to be measured , such as the depth or level difference of a hole or groove formed on a substrate through surface treatment , or the increasing or decreasing thickness of a film layer or substrate , and which includes a light source which generates measurement light having a predetermined wavelength bandwidth , an interference optical system which generates interference of light reflected respectively from a first plane and a second plane of the structure to be measured , a spectrometric unit which disperses wavelength of the interference light generated by the interference optical system , and a detection unit which detects the intensity of each wavelength of light dispersed by the spectrometric unit and generates a spectrum , the device comprising:a) a spectrum acquisition unit which acquires the spectrum of interference light with said detection unit at two time points separated in time;b) a difference area computation unit which determines the absolute difference area of two spectra obtained by said spectrum acquisition unit; andc) an analysis unit which determines the dimension of the structure ...

CONTAINER THICKNESS MEASURING SYSTEMS AND METHODS

Various embodiments are directed to systems and methods for measuring a thickness of a container. For example, a control device may receive data indicating a surface topology of the container and based on the surface topology of the container, instruct a multi-axis positioning system to position a sensor relative to a first point of the container such that: a distance from the sensor to a surface at the first point is about equal to a predetermined distance; and the sensor direction is about normal to the surface at the first point. Data indicating the thickness at the first point may be received from the sensor. 1. A system for measuring a thickness of a container , the system comprising:a sensor to receive a reflection of illumination from the container, wherein the sensor is sensitive along a sensor direction; anda multi-axis positioning system mechanically coupled to the sensor; and receive data indicating a surface topology of the container;', a distance from the sensor to the surface at the first point is about equal to a predetermined distance; and', 'the sensor direction is about normal to the surface at the first point., 'based on the surface topology of the container, instruct the multi-axis positioning system to position the sensor relative to a first point of the container such that], 'a control device comprising at least one processor and operatively associated data storage, wherein the data storage comprises instructions that, when executed by the at least one processor, cause the control device to2. The system of claim 1 , wherein the data storage further comprises instructions that claim 1 , when executed by the at least one processor claim 1 , cause the control device to:receive from the sensor data indicating a thickness of the container at the first point of the container; a distance from the sensor to the surface at the second point is about equal to the predetermined distance; and', 'the sensor direction is about normal to the surface at the ...

Defect inspection method and defect inspection apparatus

A defect inspection method includes: illuminating an area on surface of a specimen as a test object under a specified illumination condition; scanning a specimen to translate and rotate the specimen; detecting scattering lights to separate each of scattering lights scattered in different directions from the illuminated area on the specimen into pixels to be detected according to a scan direction at the scanning a specimen and a direction approximately orthogonal to the scan direction; and processing to perform an addition process on each of scattering lights that are detected at the step and scatter approximately in the same direction from approximately the same area of the specimen, determine presence or absence of a defect based on scattering light treated by the addition process, and compute a size of the determined defect using at least one of the scattering lights corresponding to the determined defect.

LIGHT INTERFERENCE SYSTEM AND SUBSTRATE PROCESSING APPARATUS

A light interference system and a substrate processing apparatus can suppress loss of reflection spectrum. The light interference system 1 includes a light source a coupler multiple collimators A and B, a collimator a mirror a spectrometer and an operation unit The collimator and the mirror are provided at a side of multiple input terminals except a first input terminal and configured to send reflected lights from multiple output terminals to the multiple output terminals again. 1. A light interference system of measuring a thickness or a temperature of a measurement target object having a first main surface and a second main surface facing the first main surface , the light interference system comprising:a light source configured to emit a measurement light having a wavelength that transmits the measurement target object;a coupler having multiple input terminals and multiple output terminals corresponding to the multiple input terminals, at least one of the multiple input terminals serving as a first input terminal configured to receive the measurement light from the light source;multiple first collimators respectively connected to the multiple output terminals of the coupler, each being configured to emit the measurement light to the first main surface of the measurement target object and to receive reflected lights from the first main surface and the second main surface;a transmission device provided at a side of the multiple input terminals except the first input terminal and configured to send the reflected lights from the multiple output terminals to the multiple output terminals again;a spectrometer connected to the first input terminal and configured to measure an interference intensity distribution that is an intensity distribution of the reflected lights from the first main surface and the second main surface, the interference intensity distribution being dependent on a wavelength; anda measurement unit connected to the spectrometer and configured to ...

REAL-TIME TEMPERATURE, OPTICAL BAND GAP, FILM THICKNESS, AND SURFACE ROUGHNESS MEASUREMENT FOR THIN FILMS APPLIED TO TRANSPARENT SUBSTRATES

A method and apparatus () used in connection with the manufacture of thin film semiconductor materials () deposited on generally transparent substrates (), such as photovoltaic cells, for monitoring a property of the thin film (), such as its temperature, surface roughness, thickness and/or optical absorption properties. A spectral curve () derived from diffusely scattered light (′) emanating from the film () reveals a characteristic optical absorption (Urbach) edge. Among other things, the absorption edge is useful to assess relative surface roughness conditions between discrete material samples () or different locations within the same material sample (). By comparing the absorption edge qualities of two or more spectral curves, a qualitative assessment can be made to determine whether the surface roughness of the film () may be considered of good or poor quality. 1. A method for assessing at least the surface roughness of a thin film applied to a generally transparent substrate , said method comprising the steps of:a) providing a generally transparent substrate;b) depositing a thin film of material onto the substrate; the film material composition exhibiting an optical absorption (Urbach) edge; the film having an upper exposed surface with a measurable surface roughness;c) interacting white light with the film deposited on the substrate to produce diffusely scattered light;d) detecting the diffusely scattered light emanating from the film with a detector spaced apart from the film;e) collecting the detected light in a spectrometer; using the spectrometer to produce spectral data in which the detected light is resolved into discrete wavelength components of corresponding light intensity;f) identifying the optical absorption (Urbach) edge in the spectral data; andg) determining a relative surface roughness of the film as a function of the absorption edge.2. The method of wherein said step of determining the surface roughness includes computing the area under the ...

VISION TESTING DEVICE USING MULTIGRID PATTERN

Provided is a vision testing device using a multigrid pattern for determining good or bad of a testing object by photographing the testing object assembled or mounted during the component assembly process and comparing the photographed image with a previously inputted target image, comprising: a stage part for fixing or transferring the testing object to the testing location; a lighting part for providing lighting to the testing object located on an upper portion of the stage part; a center camera part for obtaining a 2-dimensional image of the testing object located in a center of the lighting part; a irradiating part placed on a side section of the center camera part; a vision processing unit for reading the image photographed by the center camera part and determining good or bad of the testing object; and a control unit for controlling the stage part, the grid pattern irradiating part, the center camera part, wherein the grid pattern irradiating part irradiates grid patterns having periods of different intervals. 1. A vision testing device using a multigrid pattern for determining good or bad of a testing object by photographing a testing object assembled or mounted during the component assembly process and comparing the photographed image with a previously inputted target image , comprising:a stage part for fixing or transferring the testing object to a testing location;a lighting part for providing lighting to the testing object located on an upper portion of the stage part;a center camera part for obtaining a 2-dimensional image of the testing object located in a center of the lighting part;a grid pattern irradiating part placed on a side section of the center camera part;a vision processing unit for reading the image photographed by the center camera part and determining good or bad of the testing object; anda control unit for controlling the stage part, the grid pattern irradiating part, the center camera part, wherein the grid pattern irradiating part ...

System and method for improved visual detection of protective coatings

The present disclosure provides a system and method for providing an improved protective coating for a substrate that may be inspected using the unaided eye or other apparatus under available light. The protective coating is mixed with an additive comprising flakes or particles that, when applied to the substrate as part of the protective coating, allow the user to empirically determine if the surface has received an adequate protective coat. The determination of whether or not any defects exist may include comparing the observed appearance of the specialty pigment particles with a comparative standard.

FILM THICKNESS MEASURING DEVICE AND FILM THICKNESS MEASURING METHOD

A film thickness measuring device includes a spectroscopic sensor and a data processor, wherein the spectroscopic sensor measures spectroscopic data of a film coated on a substrate and the data processor obtains measured color characteristic variables from the measured spectroscopic data, compares the measured color characteristic variables with plural sets of theoretical color characteristic variables corresponding to plural sets of values, each set including one of plural values of thickness and one of plural values of index of refraction of the film, determines index of refraction of the film using the set of values corresponding to the set of theoretical color characteristic variables which minimizes a difference between the set of theoretical color characteristic variables and the measured color characteristic variables, and determines thickness of the film using the index of refraction of the film. 1. A film thickness measuring device comprising a spectroscopic sensor and a data processor ,wherein the spectroscopic sensor measures spectroscopic data of a film coated on a substrate and the data processor obtains measured color characteristic variables from the measured spectroscopic data, compares the measured color characteristic variables with plural sets of theoretical color characteristic variables corresponding to plural sets of values, each set including one of plural values of thickness and one of plural values of index of refraction of the film, determines index of refraction of the film using the set of values corresponding to the set of theoretical color characteristic variables which minimizes a difference between the set of theoretical color characteristic variables and the measured color characteristic variables, and determines thickness of the film using the index of refraction of the film.2. A film thickness measuring device according to claim 1 , wherein the spectroscopic sensor measures transmittance distribution of the film coated on the ...

Apparatus and method for contactless thickness measurement

A contactless thickness measuring apparatus is provided which includes an terahertz transmitter configured to receive the first optical path signal from the coupler and to generate a terahertz continuous wave using the first optical signal and an applied bias; an optical delay line configured to delay the second optical path signal output from the coupler; and an terahertz receiver configured to receive the terahertz continuous wave penetrating a sample and to detect an optical current using the terahertz continuous wave and the second optical path signal delayed. A thickness of the sample is a value corresponding to the optical current which phase value becomes a constant regardless of a plurality of measurement frequencies.

METHOD AND DEVICE FOR MEASURING GAS COMPONENT CONCENTRATION INSIDE A GLASS UNIT

A non-invasive method for determining a concentration of a gas component in a gas mixture contained in a spacing of a glass unit having at least two glass sheets spaced apart from each other and forming the spacing. One or more light beams is applied at an angle to the surface of the glass unit, wherein the wavelength of the emitted light beam is varied around or over the at least one absorption line of the interest gas component. The light beams transmitted through or reflected from at least one surface or interface locating at the opposite side of the spacing are collected by a detector and non-linear variations in the intensity of the transmitted or reflected light beams over an absorption line of the interest gas is then component determined. The concentration of the gas component to be measured is determined based on the non-linear variations in the intensity. 1. A non-invasive method for determining a concentration of a gas component in a gas mixture contained in a spacing of a glass unit having at least two glass sheets spaced apart from each other and forming said spacing , the method comprising:applying one or more light beams at an angle to the surface of said glass unit, wherein the wavelength of the emitted light beam is varied around or over the at least one absorption line of the interest gas component,collecting by a detector the light beams transmitted through or reflected from at least one surface or interface locating at the opposite side of the spacing,determining non-linear variations in the intensity of the transmitted or reflected light beams over an absorption line of the interest gas component to be determined, anddetermining the concentration of the gas component based on said non-linear variations in the intensity.2. The method of claim 1 , wherein the concentration determination is implemented by comparing the quantity of the non-linear intensity variations to reference intensity variations claim 1 , such as the intensity variations of ...

APPARATUS FOR REAL-TIME NON-CONTACT NON-DESTRUCTIVE THICKNESS MEASUREMENT USING TERAHERTZ WAVE

Provided is an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, and more particularly, an apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave, which is capable of measuring a thickness of a sample by irradiating a terahertz continuous wave, which is generated from a wavelength-fixed laser and a wavelength-swept laser and of which the frequency is changed at a high speed, to the sample and measuring the terahertz wave transmitting or reflected from the sample. 1. An apparatus for real-time non-contact non-destructive thickness measurement using a terahertz wave , comprising:{'sub': '1', 'a wavelength-fixed laser generating first laser light having a first fixed wavelength λ;'}{'sub': '2', 'a wavelength-swept laser generating second laser light having a second wavelength λchanged from a preset minimum wavelength to a preset maximum wavelength at a high speed for one period;'}a driver applying a voltage modulated at the same frequency as a wavelength sweep rate to the wavelength-swept laser to change the second wavelength from the minimum wavelength to the maximum wavelength for the one period;a coupler coupling the first laser light with the second laser light to form mixed light and splitting the mixed light into first mixed light and second mixed light;{'sub': THz', '1', '2', '1', '1', '1', '2', '2', '2, 'an emitter receiving the first mixed light split from the coupler to output a terahertz wave having a frequency f=|f−f| corresponding to a difference between a frequency f=c/λ(c is the speed of light in vacuum) corresponding to the first wavelength λand a frequency f=c/λcorresponding to the second wavelength λ;'}a sample irradiated with the terahertz wave output from the emitter;a detector receiving the second mixed light split from the coupler and the terahertz wave transmitting or reflected from a sample to generate a photocurrent;a data acquisition unit converting the ...

NANOPORE FABRICATION

Systems comprising a light source, thin membrane immersed in an aqueous solution and a system to direct and focus light from the light source to a spot on the membrane are provided. Methods of thinning and etching a membrane are also provided, as are membranes comprising a nanopore with a Gaussian curve shaped cross-section. 1. A method of thinning a membrane comprising shining pulsed laser light on a spot on said membrane or wherein said membrane comprises a first layer comprising an index of refraction of greater than 2.0 and shining focused light on a spot on said first layer , thereby thinning said membrane.2. The method of claim 1 , wherein said focused light is laser light and said laser light is at a wavelength of between 300 and 600 nm.3. The method of claim 1 , wherein said lighta. is within the purple, blue or green spectrum;b. comprises an intensity of at least 100 μW;c. comprises an intensity of between 1 and 45 mW; ord. is continuous-wave laser light or pulsed laser light; ore. a combination thereof.4. The method of claim 1 , wherein said membrane comprises a first layer and wherein said first layera. comprising an index of refraction of greater than 2.20;{'sub': 'x', 'b. comprises silicon nitride (SiN);'}{'sub': 'x', 'c. comprises SiNcomprising an average silicon to nitrogen ratio of greater than 0.75; or'}d. a combination thereof.5. The method of claim 1 , wherein said membranea. is a freely standing membrane, covered by an aqueous solution on both sides;b. comprises a second layer refractory to thinning by said focused light when not layered on said first layer, wherein said second layer is a dielectric layer or a layer of metal oxide, and wherein said second layer is layered onto said first layer;c. comprises a second layer comprising metal oxide and wherein said metal oxide is titanium oxide (TiO2), aluminum oxide (AlO2) or hafnium oxide (HfO2);d. does not comprise a thickness of less than 20 nm;e. is immersed in ultrapure water or salt buffer ...

MEASUREMENT METHOD FOR RESIN STATE OF PREPREG SURFACE AND MEASUREMENT DEVICE THEREFOR

To measure a thickness or a coverage of a resin present at a surface layer of a prepreg in a non-contact manner using a simple technique, a measurement method for a resin state which is a method for measuring a state of a resin present at a surface layer of a prepreg impregnated with the resin in an unidirectional reinforced fiber base material includes: irradiating the surface layer of the prepreg with light from an irradiation source; receiving reflected light from the surface layer of the prepreg by a sensor; and calculating at least one of a thickness or a coated state of the resin present at the surface layer of the prepreg from intensity of the reflected light. 114-. (canceled)15. A measurement method for a resin state , which is a method of measuring a state of a resin present at a surface layer of a prepreg impregnated with the resin in an unidirectional reinforced fiber base material , the method comprising:irradiating the surface layer of the prepreg with light from an irradiation source;receiving reflected light from the surface layer of the prepreg by a sensor; andcalculating at least one of a thickness or a coated state of the resin present at the surface layer of the prepreg from intensity of the reflected light.16. A measurement method for a resin state , which is a method of measuring a state of a resin present at a surface layer of a prepreg impregnated with the resin in an unidirectional reinforced fiber base material , the method comprising:irradiating the surface layer of the prepreg with light from an irradiation source;receiving reflected light from the surface layer of the prepreg by a sensor; andcalculating a thickness and a coated state of the resin present at the surface layer of the prepreg from intensity of the reflected light.17. The measurement method for a resin state according to claim 15 , wherein the irradiation source is arranged in a direction perpendicular to an orientation direction of continuous fibers constituting the ...

HEIGHT MEASUREMENT APPARATUS

A height measuring apparatus. The height measuring apparatus includes a frame; a driving mechanism including a driving body that is connected with and movable along the frame and a moving part that is vertically movable with respect to the driving body. The driving body includes an altitude detector configured to detect an altitude of the moving part; a force transfer rod connected with the moving part to form a lever structure; a touching head connected with a first end of the force transfer rod; a dynamometer connected with a second end of the force transfer rod; a controller configured to stop the moving part from moving in response to the value of the force detected by the dynamometer reaching a predetermined force value; and a location detector configured to detect a location of a foreign object and send the detected location of the foreign object to the controller. 1. A height measuring apparatus , comprising:a frame;a driving mechanism comprising a driving body that is connected with and movable along the frame and a moving part, wherein the moving part is vertically movable with respect to the driving body, and wherein the driving body comprises an altitude detector configured to detect an altitude of the moving part;a force transfer rod connected with the moving part to form a lever structure;a touching head connected with a first end of the force transfer rod;a dynamometer connected with a second end of the force transfer rod;a controller configured to stop the moving part from moving in response to the value of the force detected by the dynamometer reaching a predetermined force value; anda location detector configured to detect a location of a foreign object and send the detected location of the foreign object to the controller.2. The height measuring apparatus according to claim 1 , wherein the force transfer rod comprises a first rod body and a second rod body claim 1 , and wherein a length of the first rod body is greater than a length of the second ...

Measurement apparatus and method, tomography apparatus and method

An apparatus configured to obtain a physical property of an object by time-domain spectroscopy includes: a detection unit; a delay unit configured to adjust a time difference between generation and detection; a shaping unit configured to collect the electromagnetic wave pulses; a waveform obtaining unit configured to construct a time waveform of the electromagnetic wave pulses; and a collecting position adjusting unit configured to adjust a collecting position. When the collecting position is moved, an amount of adjustment when the collecting position matches first and second reflection portions, respectively, of the object, and a difference by the delay unit required for detecting first and second pulses of the time waveform are obtained, and from an amount of change of the amount of adjustment and the difference, a thickness and a refractive index of a region between the first and second reflection portions of the object are calculated.

MEASUREMENT OF OBJECT TO BE MEASURED

A measuring device includes a first optical sensor row and a second optical sensor row between which a planar object to be measured is placed. The direction of the first sensor row and the direction of the second sensor row differ from one another. Each sensor of the first sensor row forms data representing a distance between the object to be measured and the sensor. Each sensor of the second sensor row forms data representing a distance between the object to be measured and the sensor in order to determine at least one property of the object to be measured on the basis of the data. 1. A measuring device for measuring at least one property of an object to be measured , whereinthe measuring device comprises a first optical sensor row and a second optical sensor row between which a planar object to be measured is arranged to be placed;the direction of the first sensor row and the direction of the second sensor row differ from one another for measuring the object two-dimensionally;each sensor of the first sensor row is arranged to form data representing a distance between the object to be measured and the sensor; andeach sensor of the second sensor row is arranged to form data representing a distance between the object to be measured and the sensor in order to determine at least one property of the object to be measured on the basis of said data.2. A measuring device as claimed in claim 1 , wherein each sensor of the first sensor row is arranged to form the data representing the distance between the object to be measured and the sensor from a surface of a first side of the planar object to be measured;each sensor of the second sensor row is arranged to form the data representing the distance between the object to be measured and the sensor from a surface of an opposite side of the planar object to be measured in order to determine an inclination angle of the surface of the first side of the object to be measured in the direction of one dimension and in order to ...

High throughput triangulation system

A system for measuring heights of multiple structures of an object, the system may include an illumination module that is configured to illuminate the object by a light strip that is spatially incoherent; multiple cameras; a collection module that is configured to collect light that is reflected from the object and to distribute the light to the multiple cameras; wherein the collection module has an elongated field of view that has a longitudinal axis that is parallel to the light strip; wherein the multiple cameras are configured to generate, during a height measurement process, detection signals indicative of heights of the multiple structures; a mechanical stage for introducing a movement, during the height measurement process, between the object and each one of the illumination module and the collection module; and a processor that is configured to process the detection signals to determine the heights of the multiple structures. 1. A system for measuring heights of multiple structures of an object , said system comprising:an illumination module that is configured to illuminate the object by a light strip that is spatially incoherent;multiple cameras; wherein the collection module has an elongated field of view that has a longitudinal axis that is parallel to the light strip;', 'wherein the multiple cameras are configured to generate, during a height measurement process, detection signals indicative of heights of the multiple structures;, 'a collection module that is configured to collect light that is reflected from the object and to distribute the light to the multiple cameras;'}a mechanical stage for introducing a movement, during the height measurement process, between the object and each one of the illumination module and the collection module; anda processor that is configured to process the detection signals to determine the heights of the multiple structures.2. The system according to wherein during the height measurement process claim 1 , fields of view ...

MEASUREMENT APPARATUS

A measurement apparatus includes: 1. A measurement apparatus comprising:a light emitting unit that projects irradiation light to an object;a first lens that changes a divergence degree of the irradiation light emitted from the light emitting unit;an aperture stop unit that stops down the irradiation light projected from the first lens;a second lens that condenses the irradiation light passing through the aperture stop unit and projects the irradiation light to the object in a first direction;a transmission unit that is provided in a focal plane of the second lens and transmits therethrough a part of reflected light, which is generated as the irradiation light is projected to the object, reflected by the object, and transmitted through the second lens;a first light receiving unit that includes a light receiving surface that receives the part of the reflected light transmitted through the transmission unit; anda measurement unit that measures a height of a surface of the object by using a position of the part of the reflected light on the light receiving surface.2. The measurement apparatus according to claim 1 , whereinthe aperture stop unit is formed with a first opening that is provided in the focal plane of the second lens to stop down the irradiation light, andthe transmission unit is a second opening that is provided at a part of the aperture stop unit.3. The measurement apparatus according to claim 1 , whereinthe light emitting unit includes a plurality of light emitting elements arranged in a second direction intersecting the first direction, and projects a plurality of the irradiation lights to different positions on the object by causing the plurality of light emitting elements to sequentially emit light, and', 'measures a height distribution of the surface of the object in the second direction by using positions, on the light receiving surface, of a plurality of the reflected lights which are generated as the plurality of the irradiation lights are ...

Optical measurement apparatus

The optical measurement apparatus includes an interface unit and a measuring unit. The interface unit is configured to receive a synchronization signal transmitted from a PLC to a fieldbus at a constant communication cycle, and output, in synchronization with the synchronization signal, a result of measurement (a measured value) by the optical measurement apparatus and a synchronization supervisory signal. The measuring unit is configured to execute optical measurement at a measurement cycle irrelevant to the communication cycle and generate a result of the measurement and a synchronization supervisory signal. The measuring unit sets the synchronization supervisory signal into an ON state in synchronization with receipt of the synchronization signal by the interface unit after start of the measurement, and sets the synchronization supervisory signal into an OFF state in synchronization with receipt of the synchronization signal by the interface unit when the interface unit outputs the measurement result.

LIVE CELL IMAGING SYSTEMS AND METHODS TO VALIDATE TRIGGERING OF IMMUNE RESPONSE

Systems and methods for predicting an immune response against a tumor in a patient having the tumor are provided. The relative mass or changes of mass of tumor cells or immune cell in the tumor can be ex vivo observed, and an immune status of the tumor can be determined based on the mass of tumor cells or immune cell. The immune status can provide a guidance to predict the immune response against the tumor in the patient. 1. A method of predicting an immune response against a tumor in a patient having the tumor , comprising:obtaining, prior to an immunotherapeutic treatment, a tumor sample from a patient;determining, within the tumor sample, at least one of a mass of a tumor cell and a mass of an immune competent cell using live cell interferometry;using the at least one of the mass of the tumor cell and the mass of the immune competent cell to determine an immune status of the tumor sample; andusing the immune status to predict the immune response against the tumor in the patient.2. The method of claim 1 , further comprising a step of identifying a type of the immune competent cell.3. The method of claim 1 , wherein the determining the at least one of the mass of the tumor cell and the mass of the immune competent cell comprises measuring changes over a period of time in the at least one of the mass of the tumor cell and the mass of the immune competent cell.4. The method of claim 1 , wherein the mass of the tumor cell is compared with an average mass of other tumor cells in the tumor sample.5. The method of claim 1 , wherein the mass of the immune competent cell is compared with an average mass of immune competent cells in the tumor sample.6. The method of claim 1 , wherein the tumor cell is located proximal to the immune competent cell.7. The method of claim 1 , further comprising contacting the tumor sample with an immune stimulatory cytokine claim 1 , a checkpoint inhibitor claim 1 , or an immunotherapeutic agent.8. (canceled)9. (canceled)10. The method of ...

ELECTRONIC COMPONENT THICKNESS MEASUREMENT METHOD, METHOD FOR MANUFACTURING A SERIES OF ELECTRONIC COMPONENTS USING THE MEASUREMENT METHOD, A SERIES OF ELECTRONIC COMPONENTS MANUFACTURED BY THE MANUFACTURING METHOD, AND ELECTRONIC COMPONENT INSPECTION APPARATUS

An electronic component thickness measurement method includes extracting, from a plurality of second reference lines in first image data and a plurality of second reference lines in second image data, only a second reference line at which a difference in intensity peak between respective second reference lines at a same position in the first image data and the second image data is smallest, and forming third image data including a first reference line and the extracted second reference line, and calculating a thickness of the electronic component from a distance between the first reference line and the second reference line in the third image data. 1. An electronic component thickness measurement method comprising the steps of:applying a first electromagnetic wave from obliquely above to an electronic component and a transparent plate on which the electronic component is mounted;receiving reflected waves of the first electromagnetic wave and forming first image data including a first reference line representing an intensity peak of a reflected wave reflected from an upper surface of the electronic component and a plurality of second reference lines representing respective intensity peaks of a plurality of reflected waves reflected from the transparent plate;applying a second electromagnetic wave, which is different from the first electromagnetic wave in a direction of polarization, from obliquely above and at a same angle as the first electromagnetic wave, to a position on the electronic component and the transparent plate identical or substantially identical to a position to which the first electromagnetic wave is applied;receiving reflected waves of the second electromagnetic wave and forming second image data including a first reference line representing an intensity peak of a reflected wave reflected from the upper surface of the electronic component and a plurality of second reference lines representing respective intensity peaks of a plurality of reflected ...

SHAPE MEASURING METHOD

A shape measuring apparatus applies, to a light beam, a periodic pattern having periodicity in a direction perpendicular to an optical axis and displaceable in the direction perpendicular to the optical axis, relatively displaces a focal point of an objective lens in a direction parallel to the optical axis, and calculates, based on amplitude of intensity of the light beam detected by a photodetector, face shape data on the object to be measured. Then, a top surface measuring step of acquiring face shape data on a top surface of the object to be measured, and a bottom surface measuring step of acquiring face shape data on a bottom surface of the object to be measured by transmitting through the top surface of the object to be measured and aligning the focal point of the objective lens on the bottom surface of the object to be measured are performed. 1. A shape measuring method using a shape measuring apparatus comprising:a light source;a periodic pattern applying means for applying, to a light beam from the light source, a periodic pattern having periodicity in a direction perpendicular to an optical axis and displaceable in the direction perpendicular to the optical axis;an objective lens configured to irradiate an object to be measured with the light beam to which the periodic pattern is applied;a focus drive unit configured to displace a focal point of the objective lens relatively to the object to be measured in a direction parallel to the optical axis;a photodetector configured to detect the light beam reflected by the object to be measured;a face shape calculation unit configured to calculate, based on amplitude of intensity of the light beam detected by the photodetector, face shape data on the object to be measured; anda shape analysis unit configured to analyze, from the face shape data calculated by the face shape calculation unit, a shape of the object to be measured,the shape measuring method comprising:a top surface measuring step of acquiring, by the ...

THICKNESS MEASUREMENT APPARATUS AND THICKNESS MEASUREMENT METHOD

A thickness measurement apparatus includes a light source emitting light; an optical system focusing the light emitted from the light source onto an optical axis; a reflector reflecting light focused by the optical system; a detector detecting intensity of the reflected light according to a position on the optical axis where the light passing through the optical system is in focus; and a calculator calculating thickness of a measured object using a refractive index of the measured object and an amount of displacement between a first focus position and a second focus position.

SHANGHAI UNIVERSITY OF ENGINEERING SCIENCE

The present invention relates to a parallel image measurement method oriented to the insulating layer thickness of a radial symmetrical cable section. The method conducts the non-contact high-accuracy measurement based on the machine vision and the image analysis, adopts a GPU multi-core parallel platform for the high-speed measurement, extracts the useful information from the section image of the radial symmetrical cable, and then measures the insulating layer thickness. Compared with the prior art, the present patent can lower the time consumed for the accurate measurement, fill in the blank of the high-accuracy parallel image measurement of the insulating layer thickness of the radial symmetrical cable section in the domestic cable industry, break down the monopoly and technology blockade by related foreign manufacturers and improve the technology level of on-line testing of product quality in China, expedite the production automation progress of domestic manufacturer. 1. A parallel image measurement method oriented to the insulating layer thickness of a radial symmetrical cable section , characterized in that said method conducts the non-contact high-accuracy measurement based on the machine vision and the image analysis , adopts a GPU multi-core parallel platform for the high-speed measurement , extracts the useful information from an image of said radial symmetrical cable section and then measures said insulating layer thickness.2. The parallel image measurement method oriented to the insulating layer thickness of a radial symmetrical cable section according to claim 1 , characterized in that said method comprises the following steps:1) Reading an image shot, calibrated by an industrial CCD camera;2) Extracting an inner and an outer contour of said radial symmetrical cable section from said image and calculating a mass center of said cable section;3) Subjecting the pixels of said inner contour to the sub-pixel pinpointing, connecting said mass center and said ...

FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM

The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.

METHOD FOR PREDICTING FRICTIONAL RESISTANCE OF ROUGH SURFACE, AND APPARATUS FOR ESTIMATING SURFACE PERFORMANCE

The invention provides a method which predicts a ratio of the increase in frictional resistance of a rough surface in a simple manner, quickly and without variations in predicted results among individuals. The method for predicting the frictional resistance of a rough surface having a variation in roughness wavelength, and being in contact with a fluid flowing at varied velocities includes evaluating the total projected area of all prominent peaks standing out above the viscous sublayer thickness per unit area, and calculating the friction increase ratio FIR (%) or the frictional resistance increase Δτ. 1: A method for predicting the frictional resistance of a rough surface having a variation in roughness wavelength , and being in contact with a fluid flowing at varied velocities , the method comprising evaluating the total projected area A of all prominent peaks standing out above the viscous sublayer thickness per unit area (hereinafter , written as the “prominent peak projected area A”) , and calculating the friction increase ratio FIR (%) using Equation (1) below or the frictional resistance increase Δτ using Equation (2) below:{'br': None, '[Math. 1]'}{'br': None, 'i': 'C×A', 'FIR (%)=\u2003\u2003(1)'}{'br': None, '[Math. 2]'}{'br': None, 'i': C', 'AV, 'sub': 'r', 'sup': '2', 'Δτ=1/2ρ\u2003\u2003(2)'}{'sub': r', '0', 'r', '0', '0, '(in Equation (1), the coefficient C is a constant dependent on the prominent peak projected area A and is determined by performing a frictional resistance test beforehand in which the frictional resistance is measured with respect to a plurality of rough surfaces differing in the degree of roughness while changing the flow velocity V and the friction increase ratios FIR (%) of the rough surfaces are calculated wherein the friction increase ratios FIR (%) are percentages of the difference τ−τbetween the frictional resistance τof the rough surface and the frictional resistance τof a smooth surface, divided by τ, and'}{'sub': r', 'r', ' ...

FILM THICKNESS MEASURING METHOD AND FILM THICKNESS MEASURING DEVICE

A signal waveform of an estimation signal and a signal waveform of the reflected light intensity signal are coordinated with each other such that a time point when a film thickness is equal to zero in the signal waveform of the estimation signal and a base point in the signal waveform of the reflected light intensity signal coincide with each other. A film thickness corresponding to that estimated value of a signal intensity of a reflected light which corresponds to a film thickness range corresponding to a time range in the signal waveform of the estimation signal and coincides with the signal intensity of the reflected light at a desired time point is set as a film thickness of a thin film at the desired time point. 1. A film thickness measuring method comprising:arranging a volatile light-permeable film to be measured on a substrate, and irradiating the light-permeable film with light from a light source until an end of evaporation of the light-permeable film;receiving reflected light of the light-permeable film in a regular reflection direction by a light receiving element, acquiring a reflected light intensity signal that is a time-series signal of a signal intensity of the reflected light until the end of evaporation of the light-permeable film, the reflected light intensity signal indicating a change of the signal intensity, and saving the acquired reflected light intensity signal into a storage device;estimating the signal intensity of the reflected light that is obtained by irradiating the light-permeable film with light from the light source, based on a spectroscopic intensity of the light source, a spectroscopic sensitivity of the light receiving element, and an optical constant of the light-permeable film, and acquiring an estimation signal indicating a change of an estimated value of the signal intensity of the reflected light as a film thickness of the light-permeable film changes;specifying a time range where a desired time point exists, based on the ...

NOISE REDUCTION TECHNIQUES, FRACTIONAL BI-SPECTRUM AND FRACTIONAL CROSS-CORRELATION, AND APPLICATIONS

A measurement method and system include illuminating an object to be measured with light at two different wavelengths and an incident angle; capturing an image of the object; detecting a frequency of an interference pattern from the image using Fractional Bi-Spectrum Analysis; and calculating a thickness of the object based on the Fractional Bi-Spectrum Analysis. The thickness is calculated based on a relationship between the thickness and the frequency of the interference pattern. The Fractional Bi-Spectrum Analysis is performed on a linear medium with the two different wavelengths being known. 1. A measurement method comprising:illuminating an object to be measured with light at two different wavelengths and an incident angle;capturing an image of the object;detecting a frequency of an interference pattern from the image using Fractional Bi-Spectrum Analysis; andcalculating a thickness of the object based on the Fractional Bi-Spectrum Analysis.2. The measurement method of claim 1 , wherein the thickness is calculated based on a relationship between the thickness and the frequency of the interference pattern.3. The measurement method of claim 1 , wherein the Fractional Bi-Spectrum Analysis is performed on a linear medium with the two different wavelengths being known.4. A measurement system comprising:light sources illuminating an object to be measured with light at two different wavelengths and an incident angle;a camera capturing an image of the object; anda computer detecting a frequency of an interference pattern from the image using Fractional Bi-Spectrum Analysis, and calculating a thickness of the object based on the Fractional Bi-Spectrum Analysis.5. The measurement system of claim 4 , wherein the thickness is calculated based on a relationship between the thickness and the frequency of the interference pattern.6. The measurement system of claim 4 , wherein the Fractional Bi-Spectrum Analysis is performed on a linear medium with the two different ...

Interferometric level sensor

Interferometer system and method for use in a level sensor of an exposure apparatus and autofocus system employing same. Operating either at a single or multiple wavelengths, the interferometric system employs two diffraction orders, formed by diffraction grating of the system, as reference and sample beams and is structured to ensure that only light contained in one of the two orders interacts with a wafer under test, thereby ensuring that no interference fringes are projected onto the sample. The diffraction grating is positioned such that its grooves are nominally perpendicular to the direction of wafer scan. Based on measurement data representing interference between reference and sample beams at the detector, a determination of change in position of the wafer in the sample arm is made with increased sensitivity and/or resolution.

IN VITRO DETERMINATION OF SUNSCREEN PROTECTION BASED ON IMAGE ANALYSIS OF SUNSCREENS APPLIED TO SKIN

Described herein are processes, apparati, and substrates for acquiring images of sunscreen films on human skin for in vitro determination of sunscreen protection factors (SPF) incorporating image analyses. 1. A substrate for determining the absorbance or transmission of a substance comprising an optically transparent material comprising a defined height and comprising one or more indentations comprising continuously or iteratively increasing depths , wherein the absorbance or transmission of a substance can be measured for a distribution of thicknesses simultaneously and image data obtained.2. The substrate of claim 1 , wherein the substance is sunscreen.3. The substrate of claim 2 , wherein the sunscreen comprises visible (colored) claim 2 , UV absorptive claim 2 , UV reflective claim 2 , fluorescent claim 2 , phosphorescent claim 2 , or reflective media.4. The substrate of claim 1 , wherein the optically transparent material is quartz claim 1 , optically clear glass claim 1 , polymethylmethacrylate claim 1 , polystyrene claim 1 , silica claim 1 , sapphire claim 1 , crystal claim 1 , ceramic claim 1 , or a biological film or membrane.5. The substrate of claim 1 , wherein the indentations are rectangular claim 1 , square claim 1 , trapezoidal claim 1 , polygonal claim 1 , oval claim 1 , or circular.6. The substrate of claim 1 , wherein the defined height is from about 0.1 mm to about 10 mm.7. The substrate of claim 1 , wherein the continuously or iteratively increasing depths are from about 0.01 mm to 9.5 mm.8. The substrate of claim 1 , wherein the continuously or iteratively increasing depths are from about 0.001 mm to 0.01 mm.9. A method for determining a film thickness distribution of a substance on a substrate claim 1 , the method comprising:(a) applying a substance to a substrate, creating a film, the substrate comprising an optically transparent material comprising a defined height and comprising one or more indentations comprising continuously or iteratively ...

METHOD FOR DETERMINING THE PHASE ANGLE AND/OR THE THICKNESS OF A CONTAMINATION LAYER AT AN OPTICAL ELEMENT AND EUV LITHOGRAPHY APPARATUS

A method and associated EUV lithography apparatus for determining the phase angle at a free interface () of an optical element () provided with a multilayer coating () that reflects EUV radiation and/or for determining the thickness (d) of a contamination layer () formed on the multilayer coating (). The multilayer coating () is irradiated with EUV radiation, a photocurrent (I) generated during the irradiation is measured, and the phase angle at the free interface () and/or the thickness (d) of the contamination layer () is determined on the basis of a predefined relationship between the phase angle and/or the thickness (d) and the measured photocurrent (I). The measured photocurrent (I) is generated from the entire wavelength and angle-of-incidence distribution of the EUV radiation impinging on the multilayer coating (). 1. A method for determining a phase angle (φ-φ) at a free interface of an optical element provided with a multilayer coating that reflects EUV radiation and/or for determining a thickness (d) of a contamination layer formed on the multilayer coating , comprising:irradiating the multilayer coating with extreme ultraviolet (EUV) radiation,measuring a photocurrent generated during the irradiation, and{'sub': G', 'G*', 'G', 'G*, 'determining the phase angle (φ-φ) at a free interface and/or the thickness of the contamination layer in accordance with a predefined relationship between the phase angle (φ-φ) and/or the thickness (d) and the measured photocurrent,'}wherein the measured photocurrent is generated over an entire wavelength and angle-of-incidence distribution of the EUV radiation impinging on the multilayer coating.2. The method according to claim 1 , further comprising calibrating the predefined relationship between the phase angle (φ-φ) at the free interface and the photocurrent and/or between the thickness (d) of the contamination layer and the photocurrent during a time period in which the optical element is not irradiated with the EUV ...

HANDHELD APPARATUS FOR QUANTIFYING COMPONENT FEATURES

A handheld device and method using the device, the device comprising a sensor receiving light from within a field of view (FOV) to generate a plurality of consecutive images of the FOV, a structured light source that is controllable to generate a plurality of light patterns, the source arranged to project at least one light patterns into the FOV where at least a portion of a pattern reflects from an object and is captured by the sensor and a processor to receive images, the processor programmed to control the source to project a pattern into the FOV, locate the pattern in at least one of the generated images, locate discontinuities in the pattern and use the discontinuities to measure at least one dimension. 1. A handheld device for determining at least one dimension of an object , the device comprising:a hand held device housing structure;a sensor mounted within the housing structure, the sensor receiving light from within a sensor field of view (FOV) to generate a plurality of consecutive images of the sensor FOV;a structured light source that is controllable to generate a plurality of light patterns, the structured light source mounted to the housing for movement along with the sensor and arranged to project at least one of the plurality of light patterns into the sensor FOV where at least a portion of a projected light pattern reflects from an object located within the sensor FOV and is captured by the sensor; anda processor linked to the sensor to receive images of the sensor FOV generated by the sensor, the processor programmed to control the structured light source to project a light pattern into the sensor FOV, locate the projected light pattern in at least one of the generated images, locate discontinuities in the projected light pattern and use the discontinuities to measure the at least one dimension of the object in the sensor FOV.2. The handheld device of wherein the processor is programmed to identify different projected light patterns in at least a ...

HEIGHT GAUGE

A height gauge, comprising: a sliding support moving along a vertical guide and carrying a contact feeler, and a multi-chromatic light-emitting device mounted on the sliding support. A programmable controller drives the light-emitting device based on the position of the feeler. 2. The height gauge of claim 1 , wherein an actuator drives the moveable member along the vertical guide under control of an electronic control unit;3. The height gauge of claim 1 , wherein the electronic control unit is arranged to drive the light-emitting device based on a vertical distance between the position of feeler and the extremal position.4. The height gauge of claim 1 , wherein the electronic control unit is arranged to drive the light-emitting device based on a direction of a movement of the feeler with respect to the extremal position.5. The height gauge of claim 1 , wherein the electronic control unit is arranged to drive the multi-chromatic light-emitting device for modifying spectral distributions and/or intensities of an emitted light and/or time dependency of the emitted light.6. The height gauge of claim 1 , wherein the feeler comprises a force sensor configured to feed the electronic control unit with a signal representing a vertical magnitude of a force acting on a distal portion of the feeler.7. The height gauge of claim 6 , wherein the electronic control unit has a constant-force mode in which it is configured to move the feeler via the actuator in such a way as to maintain the magnitude of said force acting on a distal portion of the feeler within a predefined range.8. The height gauge of claim 1 , wherein the multi chromatic light-emitting device is capable to emit a first light perceived as red claim 1 , a second light perceived as orange claim 1 , a third light perceived as green and a fourth light perceived as white.9. The height gauge of claim 1 , wherein the multi chromatic light-emitting device is configured to illuminate at least a portion of the feeler.10. The ...

Device for determining the thickness of an object

With regard to a reliable measurement of the thickness of an object ( 4 ) even in an environment with high temperatures, a device ( 1 ) is provided for determining the thickness of an object ( 4 ), more particularly a strip-like or flat object ( 4 ), preferably for use in a hot rolling process, having a frame ( 2 ) with at least one leg ( 5, 6 ), the at least one leg ( 5, 6 ) having a sensor ( 8 a, 8 b ) for the contactless measuring of the distance to the object ( 4 ), which device is characterised in that the at least one leg ( 5, 6 ) has a structure consisting of a plurality of layers in order to reduce the temperature effect on the frame ( 2 ) and/or on the sensor ( 8 a, 8 b ).

INSPECTING A SLAB OF MATERIAL

A system for inspecting a slab of material may include a polarization maintaining single mode optical-fiber, a linearly polarized broadband light-source configured to emit a polarized-light over the optical fiber, a beam-assembly configured to receive the light over the optical fiber and direct the light toward a slab of material; a polarization-rotator for controlling polarization of the light directed to the slab of material from the beam-assembly; a computer-controlled etalon filter configured to receive the light over the optical fiber, filter the light, and direct the light over the optical fiber; and a computer-controlled spectrometer configured to receive the light over the optical fiber after the light has been filtered by the etalon filter and after the light has been reflected from or transmitted through the slab of material and spectrally analyze the light. 120-. (canceled)21. A system for inspecting a slab of anisotropic material , the system comprising:single mode optical fiber;a broadband light source configured to emit light over the optical fiber;a beam assembly configured to receive the light over the optical fiber and direct the light toward a slab of anisotropic material;a computer-controlled etalon filter configured to receive the light over the optical fiber before the light is directed toward the slab of anisotropic material, filter the light, and direct the light over the optical fiber; anda computer-controlled spectrometer configured to receive the light over the optical fiber after the light has been filtered by the etalon filter and after the light has been reflected from or transmitted through the slab of anisotropic material and spectrally analyze the light, wherein the spectral analysis includes determining a property of the slab of anisotropic material.22. The system of claim 21 , wherein:the system further comprises a directional element configured to receive the light from the etalon filter over the optical fiber and direct the light ...

Detection device, exposure apparatus, and device manufacturing method using same

A detection device that detects a mark provided on the back side of an object, the detection device includes a first detection unit configured to detect the mark from a surface side of the object; a second detection unit configured to detect a surface position of the object; and a processing unit. The processing unit determines a thickness of the object based on a difference between a first focus position acquired with reference to the position of the mark detected by the first detection unit and a second focus position acquired with reference to the surface position detected by the second detection unit.

OPTICAL INTENSITY METHOD TO MEASURE THE THICKNESS OF COATINGS DEPOSITED ON SUBSTRATES

Methods and apparatus for measuring a thickness of a coating on an moving object are provided. Light is directed toward the object at a predetermined location on the object such that a portion of the light interacts with the object. A 1D and/or 2D maximum intensities for at least one wavelength channel is captured that is produced by the portion of the light interacting with the object. A measured average intensity of the wavelength channel and/or intensities and their arithmetic derivatives of multi wavelength channel geometries is converted into 1D (averaged) and/or 2D thickness values. Based on these values an acceptability of the coating is evaluated and thickness calculated. 1. An apparatus for measuring a thickness of a coating on an object , the apparatus comprising: at least one light source configured to direct light substantially perpendicularly toward the object at a predetermined location on the object , a portion of the light interacting with the object; a wavelength detector configured to capture an intensity signal comprising at least one channel produced by the portion of the light interacting with the object; and a measurement device coupled to the wavelength detector configured to: determine intensities of light of the at least one channel based on an average maximum peak intensity captured by each channel of the at least one channel , wherein , for each channel , the average maximum peak intensity is an average of multiple maxima wavelength channel intensities taken along a peak of the channel; and determine at least one of the thickness or an acceptability of the coating on the object based on the determined intensities , wherein the apparatus is configured to measure the thickness of the coating on the object when the object is positioned at various distances from the light source and the wavelength detector ,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the apparatus of further comprising a display configured to display at least one of the ...

Atmospheric Molecular Contamination Control with Local Purging

A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.

METHOD FOR MEASURING THICKNESS OF OBJECT

Methods for measuring a thickness of an object including acquiring at least one of a wavelength domain spectrum for an amplitude ratio (Ψ) and a phase difference (Δ) of reflected light from a film material, converting the wavelength domain spectrum into a 1/wavelength domain spectrum, acquiring a resulting spectrum by performing fast fourier transform (FFT) on the 1/wavelength domain spectrum, and measuring a thickness of the film material from the resulting spectrum may be provided. 1. A method for measuring a thickness of an object , the method comprising:acquiring a wavelength domain spectrum for at least one of an amplitude ratio (Ψ) and a phase difference (Δ) of reflected light from a film material;converting the wavelength domain spectrum into a 1/wavelength domain spectrum;acquiring a resulting spectrum by performing fast fourier transform (FFT) on the 1/wavelength domain spectrum; andmeasuring a thickness of the film material from the resulting spectrum.2. The method of claim 1 , wherein the at least one of the amplitude ratio (Ψ) and the phase difference (Δ) of the reflected light is measured using a spectroscopic ellipsometer.3. The method of claim 1 , wherein the film material includes two or more layers.4. The method of claim 1 , wherein the film material includes two or more materials.5. The method of claim 1 , further comprising:performing equally-spaced sampling on the 1/wavelength domain spectrum.6. The method of claim 5 , further comprising:performing offset compensation on the 1/wavelength domain spectrum.7. The method of claim 1 , wherein the measuring a thickness of the film material from the resulting spectrum comprises determining a thickness value at a peak of the resulting spectrum as the thickness of the film material.8. The method of claim 7 , wherein the measuring a thickness of the film material from the resulting spectrum further comprises calibrating the determined thickness value using a reference value.9. The method of claim 7 , ...

Measurement Target Measuring Program, Measurement Target Measuring Method, And Magnifying Observation Device

Provided are a measurement target measuring method, and a magnifying observation device which make it possible to readily and intuitively recognize a deviation between actual height image data and CAD data concerning a specific portion of a measurement target. A CAD height data generation unit generates a plurality of pieces of CAD height data based on basic CAD data. A reference height data selection unit selects reference height data from the plurality of pieces of CAD height data. A reference appearance image data acquisition unit acquires a reference appearance image corresponding to the reference height data. A target image display unit displays a target image based on texture image data or actual height image data, and a reference image display unit displays a reference image based on the reference appearance image data or the reference height data. 1. A measurement target measuring method , comprising:acquiring three-dimensional CAD data representing a measurement target;acquiring actual height image data that includes as height information a distance from a reference position to each part on the surface of the measurement target in one direction;generating a plurality of pieces of CAD height data that each include distances from a reference position to respective parts on the surface of the measurement target in a plurality of directions on the basis of the CAD data;selecting, from the plurality of pieces of CAD height data, CAD height data with the highest matching degree with respect to the actual height image data, as reference height data;displaying as a target image a first image based on the actual height image data or a second image corresponding to the first image, and displaying as a reference image a third image based on the reference height data or a fourth image corresponding to the third image;performing alignment of the target image and the reference image as first alignment by pattern matching;specifying a measurement place for the measurement ...

SYSTEMS AND METHODS OF USING ABSORPTIVE IMAGING METROLOGY TO MEASURE THE THICKNESS OF OPHTHALMIC LENSES

A method of measuring the thickness of an ophthalmic lens includes providing an ophthalmic lens having a light absorptive component, and passing light having a wavelength through the ophthalmic lens whereupon the light absorptive component absorbs some of the light as the light passes through the ophthalmic lens. After the light has passed through the ophthalmic lens, the light is used to generate a digital image for the ophthalmic lens that has pixel intensity data that corresponds to the shape of the ophthalmic lens. Information about the light prior to passing through the ophthalmic lens, the light absorptive component of the ophthalmic lens, and the pixel intensity data is used to calculate a thickness profile for the ophthalmic lens. 1. A method of measuring the thickness of an ophthalmic lens comprising:providing an ophthalmic lens having a light absorptive component;passing light having a wavelength through said ophthalmic lens whereupon said light absorptive component absorbs some of said light as said light passes through said ophthalmic lens;after said light has passed through said ophthalmic lens, directing said light to generate a digital image for said ophthalmic lens, said digital image having pixel intensity data that corresponds to the shape of said ophthalmic lens;using information about said light prior to passing through said ophthalmic lens, said light absorptive component of said ophthalmic lens, and said pixel intensity data to calculate a thickness profile for said ophthalmic lens.2. The method as claimed in claim 1 , wherein the providing an ophthalmic lens step comprises:providing a forming optic having a convexly curved top surface;forming said ophthalmic lens over said convexly curved top surface of said forming optic.3. The method as claimed in claim 2 , further comprising:providing a light source for said light having said wavelength;prior to the passing light step, generating, filtering and diffusing said light.4. The method as claimed ...

PECVD PROCESS

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. 1reflecting a broad spectrum radiation from the substrate;analyzing the spectrum of the reflected light using a spectrograph;fitting a Fresnel model to the analyzed spectrum based on refractive index and extinction coefficient of the layer being deposited; anddetermining the layer thickness by minimizing the square of the difference between the analyzed spectrum and the model.. A method of determining thickness of a layer during deposition of the layer on a substrate, comprising: This application claims benefit of U.S. Provisional Patent Application Ser. No. 61/761,515, filed Feb. 6, 2013, U.S. Provisional Patent Application Ser. No. 61/738,247, filed Dec. 17, 2012, and U.S. Provisional Patent Application Ser. No. 61/719,319, filed Oct. 26, 2012, each of which is incorporated herein by reference.Embodiments described herein relate to processes and apparatus for performing plasma deposition on a substrate. More specifically, embodiments described herein relate to plasma deposition processes and apparatus for forming layers having extreme uniformity of composition and thickness.The semiconductor industry has grown according to Moore's Law for the last fifty years. Moore's Law roughly holds that the number of transistors on an integrated circuit doubles about every two years. Inherent in this formulation of is the limitation that the ...

Confocal microscope for determination of a layer thickness and microscopy method for determination of a layer thickness

A confocal microscope for determination of a layer thickness comprises: a focus adjusting device configured to adjust a relative displacement between a focus position of the illumination light and a specimen position along an optical axis, wherein measurement signals belonging to different settings of the focus adjusting device can be recorded; an evaluation device for determining a specimen layer thickness as follows: determine intensity band positions of two intensity bands in a measurement graph recorded by a light measuring device, the measurement graph indicating a light intensity in dependence of the focus position; determine a layer thickness on the basis of a positional difference between the intensity band positions; and determine the layer thickness using a mathematical model which describes for overlapping intensity bands a dependence of the intensity band positions on a light wavelength and the layer thickness, considering interference of the illumination light at the layer. 1. A confocal microscope for determination of a layer thickness , comprising:optical components for guiding and focusing illumination light onto a specimen;a focus adjusting device which is configured to adjust a relative displacement between a focus position of the illumination light and a specimen position along an optical axis of the confocal microscope;a light measuring device which is arranged for confocal measurement of illumination light coming from the specimen, wherein measurement signals belonging to different settings of the focus adjusting device can be recorded with the light measuring device;an evaluation device for determining a layer thickness of the specimen, to which purpose the evaluation device is configured to:determine intensity band positions of at least two intensity bands in a measurement graph recorded by the light measuring device, the measurement graph indicating a measured light intensity in dependence of the focus position, anddetermine a layer thickness ...

System and Method for Enhancing Data Processing Throughput Using Less Effective Pixel While Maintaining Wafer Warp Coverage

An inspection system is disclosed. In one embodiment, the inspection system includes an interferometer sub-system configured to acquire an interferogram of a sample. The inspection system may further include a controller communicatively coupled to the interferometer sub-system. The controller is configured to: receive the interferogram from the interferometer sub-system; generate a phase map of the sample based on the received interferogram, wherein the phase map includes a plurality of pixels; select a sub-set of pixels of the plurality of pixels of the phase map to be used for phase unwrapping procedures; perform one or more phase unwrapping procedures on the sub-set of pixels of the phase map to generate an unwrapped phase map; and generate a surface height map of the sample based on the unwrapped phase map. 1. An inspection system , comprising:an interferometer sub-system configured to acquire an interferogram of a sample; and receive the interferogram from the interferometer sub-system;', 'generate a phase map of the sample based on the received interferogram, wherein the phase map includes a plurality of pixels;', 'select a sub-set of pixels of the plurality of pixels of the phase map to be used for phase unwrapping procedures;', 'perform a first set of one or more phase unwrapping procedures on the sub-set of pixels of the phase map to generate an unwrapped phase map; and', 'generate a first surface height map of the sample based on the unwrapped phase map., 'a controller communicatively coupled to the interferometer sub-system, the controller including one or more processors configured to execute a set of program instructions stored in a memory, the set of program instructions configured to cause the one or more processors to2. The inspection system of claim 1 , wherein the controller is further configured to:select an additional sub-set of pixels of the plurality of pixels of the phase map to be used for phase unwrapping procedures, the additional sub-set ...

DEVICE AND METHOD FOR MEASURING THICKNESS

A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses. 1. A device for measuring a thickness , the device comprising:a laser configured to emit a laser beam to an object in a semiconductor processing chamber;a quartz glass installed inside the chamber and configured to reflect a part of the laser beam and to transmit a remainder of the laser beam;a first light receiving sensor installed inside the chamber and configured to detect an intensity of first reflected light reflected from the quartz glass;a second light receiving sensor installed inside the chamber and configured to detect an intensity of second reflected light transmitted through the quartz glass and reflected from the object; anda controller configured to calculate an input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.2. The device of ...

INTEGRATED OPTICAL DEVICE FOR CONTACTLESS MEASUREMENT OF ALTITUDES AND THICKNESSES

An optical device for contactless measurement of height and/or thickness. The optical device having an axial chromatic aberration in order to encode the height and/or thickness information of an object positioned in the measurement field. The optical system is anchored in a confocal architecture. A detection system decodes the information through a detection system allowing the wavelength(s) focused on the surface(s) of the object to be discriminated. A plurality of points can be measured simultaneously or successively. 112-. (canceled)13. A chromatic confocal measurement apparatus for measuring height , wherein the measurement apparatus is configured to measure simultaneously a plurality of distinct points of an object , and comprising a measurement volume which is defined , in a direction of an optical axis , by an axial chromatic aberration thereof , and in a plane normal to the optical axis , by an image lateral field consisting of a plurality of image points , and at least one polychromatic source allowing a plurality of source points to be generated either directly under free field conditions or via propagation inside a set of illumination optical fibres;', 'a combination/separation assembly configured to combine and/or separate beams;', 'a set of lenses forming a chromatic optical system configured to accept an object lateral field defined by the plurality of source points, and comprising at least one lens having an extended axial chromatic aberration, which forms, in a space of the object, an image lateral field, an axial position of which depends on a wavelength;', 'a spectral analysis device associated with a photodetector, and configured to image a plurality of spectra corresponding to a plurality of image points forming the image lateral field;', 'a plurality of spatial filters located in a conjugated image plane of a set of lenses and organised strictly identically to the plurality of source points located in the object lateral field, and wherein the ...

Optical scanning probe

The present invention relates to a scanning probe ( 100 ) for the dimensional acquisition of an object ( 400 ) by irradiating the object ( 400 ) with light and detecting reflected light comprising: a detection unit ( 120 ) comprising an imaging sensor ( 122 ) and a sensor lens assembly ( 124 ) for detecting the reflected light, a light projecting unit ( 141 ) comprising a light source ( 142 ) for generating light, and source optics ( 145 ) for focusing the light, and light plane generating optics ( 143 ) for generating a light plane ( 149 ) for irradiating the object, and an adjustment mechanism ( 155 ) comprised in the light projecting unit ( 141 ), for adjusting the position or orientation of the light plane relative to the detection unit. It further relates to a method for assembly of a scanning probe ( 100 ).

MEASUREMENT APPARATUS AND MEASUREMENT METHOD

A measurement apparatus and a measurement method capable of speedily and accurately measuring an edge shape are provided. A measurement apparatus according to an aspect of the present disclosure includes an objective lens positioned so that its focal plane cuts across an edge part of a substrate, a detector including a plurality of pixels and configured to detect a reflected light from the edge part of the substrate through a confocal optical system, an optical head in which the objective lens and the detector are disposed, a moving mechanism configured to change a relative position of the optical head with respect to the substrate so that an inclination of the focal plane with respect to the substrate is changed, and a processing unit configured to measure a shape of the edge part. 1. A measurement apparatus comprising:an objective lens positioned so that its focal plane cuts across an edge part of a substrate, and configured to concentrate illumination light so that a linear illumination area is formed on the focal plane;a detector comprising a plurality of pixels arranged along a direction of the linear illumination area, and configured to detect a reflected light from the edge part of the substrate through a confocal optical system;an optical head in which the objective lens and the detector are disposed;a moving mechanism configured to change a relative position of the optical head with respect to the substrate so that an inclination of the focal plane with respect to the substrate is changed; anda processing unit configured to measure a shape of the edge part based on a position of the detector at which intensity of the reflected light reaches a peak.2. The measurement apparatus according to claim 1 , further comprising a rotatable stage configured to rotate the substrate claim 1 , whereinthe reflected light is detected while rotating the rotatable stage.3. The measurement apparatus according to claim 1 , wherein:the moving mechanism rotationally moves the ...

PORTABLE INTERFEROMETRIC DEVICE

The present invention provides a novel simple, portable, compact and inexpensive approach for interferometric optical thickness measurements that can be easily incorporated into an existing microscope (or other imaging systems) with existing cameras. According to the invention, the interferometric device provides a substantially stable, easy to align common path interferometric geometry, while eliminating a need for controllably changing the optical path of the beam. To this end, the inexpensive and easy to align interferometric device of the invention is configured such that it applies the principles of the interferometric measurements to a sample beam only, being a single input into the interferometric device. 123-. (canceled)24. An interferometric device comprising a light directing optical arrangement for directing light to an optical detector , wherein the light directing optical arrangement is configured for defining first and second substantially overlapping optical paths towards said optical detector , the light directing optical arrangement comprises:a beam splitter/combiner unit for receiving an input beam of an amplitude and phase modulation and splitting said input beam into first and second light beams;a first and second reflective surfaces accommodated in the first and second optical paths of said first and second light beams to direct said first and second light beams back to said beam splitter/combiner that directs the combined beam to the detector;a spatial filter comprises a pinhole accommodated in front of at one of the first and second reflective surfaces and a Fourier optics assembly comprising two lenses, one lens being in a 4f configuration with respect to the other;the beam splitter/combiner unit directing one of the first and second light beams through said spatial filter to enable amplitude and phase demodulation thereof and formation of a reference beam with respect to the other modulated beam.25. The interferometric device of claim 24 , ...

FILM THICKNESS MEASUREMENT DEVICE AND FILM THICKNESS MEASUREMENT METHOD

A film thickness measurement device includes a light source, an imaging component, and a controller. The controller estimates unknown variables I(j), I(j), k(j), and t(i) based on the Formula (1), where i represents an observation point number of an interference image captured by the imaging component, j represents a number for a type of wavelength of monochromatic light, λ(j) represents wavelength of the monochromatic light, n represents a. refractive index of a semi-transparent film, g(i,j) represents a brightness value observed at an observation point, I(j) represents an intensity of reflected light from a front face of the semi-transparent film, I(j) represents an intensity of reflected light from a rear face of the semi-transparent film when there is no absorption of light in the semi-transparent film, k(j) represents an absorption coefficient of the semi-transparent film, and t(i) represents a film thickness of the semi-transparent film. 1. A film thickness measurement device , comprising:a light source for irradiating configured to irradiate a semi-transparent film, which is a measurement object, with light that includes monochromatic light of a plurality of wavelengths;an imaging component configured to capture an interference image generated by reflected light of the light reflected from a front face of the semi-transparent film and reflected light of the light reflected, from a rear face of the semi-transparent film; and{'sub': 1', '20, 'claim-text': {'br': None, 'i': g', 'i,j', 'I', 'j', 'I', 'j', 'e', 'I', 'j', 'I', 'j', 'e', 'nt', 'i', 'j, 'sub': 1', '20', '1', '20, 'sup': −2k(j)t(i)', '−k(j)t(i), '()=()+()±2√{square root over (()())}cos {4π()/λ()}\u2003\u2003(1)'}, 'a controller the configured to estimate unknown variables I(j), I(j), k(j), and t(i) based on the following Formula (1){'sub': 1', '20, 'where i represents an observation point number of the interference image captured by the imaging component, j represents a number for a type of wavelength ...

Scanning interferometry technique for through-thickness evaluation in multi-layered transparent structures

A multi-layer transparent composite detection technique includes producing two beams from a single, low-coherence source, a test beam and a reference beam, and scanning the reference beam to determine, with high precision, the depths of flaws (e.g., delaminations, bubbles, inclusions or other reflective or scattering objects) within a specimen or test object. The techniques combine light back-reflected or back-scattered from an internal flaw or interface with light in a reference path to identify such features and locations. 1. A method of scanning a multi-layered specimen , the method comprising:receiving a coherent radiation beam and separating the coherent radiation beam into an object beam and a reference beam, the object beam and the reference beam being coherent with one another;directing the object beam at the specimen and collecting a resulting sampled beam from the specimen, wherein the sampled beam comprises reflected radiation from the specimen and/or backscattered radiation from the specimen;maintaining the reference beam along a reference beam path and free from incidence on the specimen, and scanning the reference beam along different optical path lengths of the reference beam path, wherein the scanning of the reference beam is along a reference axis coinciding with an axis into the specimen and over a depth region into the specimen; andcombining the sampled beam with the reference beam to produce an interferometric intensity signal or pattern, where, as a result of the scanning of the reference beam, the interferometric pattern contains amplitude peaks that are caused by reflection or scattering from discontinuities at different depths within the depth region of the specimen.2. The method of claim 1 , the method further comprising:identifying, in a signal processing machine, the depth positions, within the specimen, of each of the discontinuities from the positions of the amplitude peaks in the interferometric pattern.3. The method of claim 1 , the ...

Wavelength combining of multiple source

A light combiner (500) for use in a metrology tool includes a plurality of light sources (LED 1, LED 2, LED 3, LED 4, LED 5), a first filter (502), and a second filter (504). The first filter is designed to substantially reflect light generated from a first source of the plurality of light sources, and to substantially transmit light generated from a second source of the plurality of light sources. The second filter is designed to substantially reflect light generated from the first source and the second source of the plurality of light sources, and to substantially transmit light generated from a third source of the plurality of light sources. An angle of incidence of the light generated from the first source on a surface of the first filter is less than 30 degrees.

METHOD FOR MEASURING A HEIGHT MAP OF MULTIPLE FIELDS OF VIEW AND COMBINING THEM TO A COMPOSITE HEIGHT MAP WITH MINIMIZED SENSITIVITY TO INSTRUMENT DRIFT

A method for measuring a height map of multiple fields of view on a surface of a substrate with an optical profilometer and combining them to a composite height map, the method includes: moving the profilometer relative to the surface from field to field along a route; measuring height maps of fields on the surface along the route with the profilometer; and, combining a plurality of height maps of measured fields by normalizing said height maps to each other to produce a composite height map of the surface; wherein the route is configured to minimize sensitivity to height drifting of the profilometer during combining a plurality of the height maps. 1. A method for measuring a height map of multiple fields of view on a surface of a substrate with an optical profilometer and combining them to a composite height map , the method comprises:moving the profilometer relative to the surface from field to field along a route;measuring height maps of fields on the surface along the route with the profilometer; and,combining a plurality of height maps of measured fields to produce a composite height map of the surface, wherein the route is configured to minimize sensitivity to the effects caused by height drift of the profilometer during combining the plurality of height maps.2. The method according to claim 1 , wherein the route comprises directions with a first and second directional component claim 1 , the second directional component being substantially perpendicular to the first directional component claim 1 , and moving of the profilometer relative to the surface comprises at least one time moving forward and backward in both the first and second directional component during measuring the height maps of the fields of view.3. The method according to claim 2 , wherein moving forward and backward in both the first and second directional component comprises moving forward and backward in the first direction at least two fields of view and moving forward and backward in the ...

SYSTEMS, DEVICES, AND METHODS FOR COMMUNICATING FOOD PRODUCT SLICE THICKNESSES

Systems, methods and slice thickness gauges that are capable of providing customers with identifying features representative of varying thicknesses of food products slices available for purchase, and with which customers can place orders for sliced food products having a desired slice thickness. The method includes providing a slice thickness gauge to a customer. The slice thickness gauge includes a plurality of identifying features each identifying feature corresponding to a thickness of a food product that may be produced by the attendant. The identifying features include a numeric value that is an integer devoid of fractions and decimal values and corresponds to a slice measurement that can be configured on a slicing machine. 1. A method for purchasing sliced food products from an attendant at a store counter , the method comprising:providing a slice thickness gauge to a customer, the slice thickness gauge having a plurality of identifying features each identifying feature corresponding to a thickness of a food product that may be produced by the attendant, the identifying features including a numeric value that is an integer devoid of fractions and decimal values and corresponds to a slice measurement that can be configured on a slicing machine;communicating a customer selection to the attendant in the form of a slip, the slip including identification of the food product and the numeric value, wherein one or both of the slip and the thickness gauge include a representation of the slice thickness;communicating an acceptance of the slip to the customer;validating the order in response to the identification of the food product and the numeric thickness value;communicating invalid orders to the customer;configuring the slicing machine to slice the food product to a thickness corresponding to the numeric value;slicing the food product to the thickness corresponding to the numeric value;weighing and packaging the food product;notifying the customer that the food ...

DEVICE FOR MEASURING SLAB THICKNESS

A device for measuring the thickness of slag on the surface of liquid metal contained in an ingot mould comprises a wire made of electrically conductive material and capable of being eliminated under the effect of the heat at the temperature of the slag, the wire having a free end able to be dipped into the slag, a wire feeder capable of displacing the wire so that its free end dips vertically into the slag according to a predetermined trajectory, a wire displacement measurer capable of measuring a distance travelled by the free end of the wire during a time interval between two predetermined events when the latter is displaced under the action of the feeding means, and a wire feeder controller having a molten metal contact detector capable of detecting contact between the free end and the surface of the liquid metal. 117-. (canceled)18. Device for measuring thickness of a slag on the surface of a given liquid metal contained in a metallurgical vessel , the device comprising:a wire made of electrically conductive material and configured to be eliminated under the effect of the heat at the temperature of said slag, the wire comprising a free end configured to be dipped into said slag, wherein said wire is at least partially wound on a reel mounted free in rotation,a wire feeder configured to feed the wire from the reel, capable of displacing the wire so that its free end dips vertically into the slag according to a predetermined trajectory,a wire displacement measurer capable of measuring a distance travelled by the free end of the wire during a time interval between two predetermined events when the wire is displaced under the action of the wire feeder, anda wire feeder controller comprising a molten metal contact detector capable of detecting contact between the free end of the wire and the surface of the liquid metal.19. Device according to claim 18 , wherein the wire displacement measurer comprises an optical coder.20. Device according to claim 18 , wherein the ...

Board inspection method

In order to inspect a board, first, an inspection area including a solder joint is provided with a first light having a first color, a second light having a second color and a third light having a third color at a first inclination angle, a second inclination angle smaller than the first inclination angle and a third inclination angle smaller than the second inclination angle with respect to the board, respectively. Then, a color image of the inspection area is acquired according to the first light, the second light and the third light provided to the inspection area. Thereafter, it is inspected whether the solder joint is good or bad by using a color distribution in the color image. Then, the inspection result is verified by using pre-measured height information of the solder joint. Thus, an inspection error may be prevented.

METHOD AND APPARATUS FOR DETERMINING THE POSITION OF OBJECTS ON A CONVEYOR

There is provided an apparatus for determining the position of objects () advancing in line on a supporting plane belonging to a transport line (). The apparatus includes, for determining the position of an object () on the supporting plane, sources (A, A) of a first and a second light beam () generating collimated beams () with substantial point-like cross-sectional size, which propagate along paths defining a plane parallel to the supporting plane and forming acute angles with the advance direction (F), and detectors (B, B) for the separate detection of the first and the second beam (). A processing unit () includes means for comparing the instants at which an object passes through each beam () and for detecting, based on the comparison result, a possible offset of the position of the object () from a reference position. 12122202302202302220230. Method A method of determining the position of objects () advancing in line on a supporting plane belonging to a transport line () , wherein the position of the objects () on the supporting plane , in particular in transverse direction (y) to the advance direction (F) of the same objects , is determined by detecting their passage through a first and a second light beam ( , ) crossing each other , characterised in that said light beams ( , ) are collimated beams with substantially point-like cross-sectional size , which propagate along paths defining a plane parallel to the supporting plane and forming acute angles with the advance direction (F) , and in that a possible offset of the position of an object () from a reference position is detected by comparing the instants at which the object passes through each beam ( , ).2. The method according to claim 1 , wherein:{'b': ['2', '220', '230', '2', '220', '230', '220', '230', '220', '230'], '#text': 'either the instants at which the object () enters the first and the second beam (, ) or the instants at which the object () leaves the first and the second beam (, ) are detected, ...

INTEGRATED WAFER BOW MEASUREMENTS

In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit, an optical sensor, a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit. 1. A wafer bow measurement system comprising:{'claim-text': ['a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit;', 'an optical sensor;', 'a calibration standard to calibrate the optical sensor;', 'a linear stage actuator to impart linear direction of movement to the optical sensor;', 'a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and', 'a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit.'], '#text': 'a measurement unit including:'}2. The wafer bow measurement system of claim 1 , wherein the wafer centering sensor includes an actuator for active centering of the measured wafer supported in the measurement unit.3. The wafer bow measurement system of claim 1 , wherein the wafer support assembly includes a wafer alignment chuck.4. The wafer bow measurement system of claim 1 , further comprising a reference wafer unit.5. The wafer bow measurement system of claim 4 , wherein the reference wafer unit includes a plurality of slots to accommodate a series of different reference wafers.6. The wafer bow measurement system of claim 5 , wherein the series of different reference wafers provide a range of measurement control references for the measured wafer supported in the measurement unit.7. The wafer bow measurement system of claim 4 , ...

ETCHING AMOUNT MEASUREMENT PATTERN, ETCHING AMOUNT MEASUREMENT APPARATUS, AND ETCHING AMOUNT MEASUREMENT METHOD

According to one embodiment, an etching amount measurement pattern is provided in a surface of a substrate. The pattern comprises a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted, 1. An etching amount measurement pattern provided in a surface of a substrate , the pattern comprising a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted ,a configuration of the component having 4-fold rotational symmetry,the plurality of components being arranged in a disposition having 4-fold rotational symmetry.2. The pattern according to claim 1 , wherein the configuration of the component is a square.3. The pattern according to claim 1 , wherein the total surface area of the plurality of components is the same as the surface area between the plurality of components.4. An etching amount measurement apparatus claim 1 , comprising:{'claim-ref': [{'@idref': 'CLM-00001', 'claim 1'}, {'@idref': 'CLM-00001', 'claim 1'}], 'a light source irradiating light toward the pattern according to , the pattern according to being provided in a surface of a substrate;'}a first spectral data generating unit generating first spectral data by separating diffracted light from a measurement portion, the pattern being provided in the measurement portion; anda calculating unit determining an etching amount of the measurement portion from the first spectral data and a relationship between the first spectral data and the etching amount, the relationship being predetermined.5. The apparatus according to claim 4 , further comprising a data storage unit storing data relating to the predetermined relationship between the etching amount of the measurement portion and the first spectral data.6. An etching amount measurement apparatus claim 4 , comprising:{'claim-ref': [{'@idref': 'CLM-00001', 'claim 1'}, {'@idref': 'CLM-00001', 'claim 1'}], 'a light source irradiating light toward the pattern ...

APPARATUS FOR MEASURING THICKNESS OF THIN FILM, SYSTEM INCLUDING THE APPARATUS, AND METHOD FOR MEASURING THICKNESS OF THIN FILM

An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value. 1. An apparatus for measuring a thickness of a thin film , the apparatus comprising:a signal detector configured to detect an electric field signal with respect to a reflected light that is reflected from a thin film;a Fast Fourier Transform (FFT) generator configured to perform FFT with respect to the electric field signal to separate a direct current (DC) component and an alternating current (AC) component of the electric field signal from each other;an Inverse Fast Fourier Transform (IFFT) generator configured to receive the separated AC component of the electric field signal, perform IFFT with respect to the AC component, and extract a phase value of the AC component; anda thickness analyzer configured to measure the thickness of the thin film using the phase value.2. The apparatus of claim 1 , wherein the IFFT generator receives only the separated AC component claim 1 ,wherein the apparatus is configured to extract a first phase value based on a first electric field signal of a first reflected light that is reflected from the thin film before a process is performed, and a second phase value based on a second electric field signal of a second reflected light that is reflected from ...

Apparatus for detecting heights of defects on optical glass

A detection apparatus includes four sets of transmitter and receiver wherein the transmitters are on a first sliding member of a frame and the receivers are on a second sliding member of the frame; and drives for moving the first and second sliding members back and forth. During the movements of the first and second sliding members, each transmitter emits laser beam toward the receiver of the same set by passing through a space above a photoresist-coated optical glass by 100 μm, no signal is generated at the receiver if the laser beam is not blocked, and a signal is generated at the receiver if the laser beam is blocked by at least one of a plurality of particles on the photoresist-coated optical glass. 1a frame including first and second supports on tops of two sides respectively, first and second sliding members on the first and second supports respectively, two front interconnecting members having two ends releasably secured to front ends of the supports respectively, and two rear interconnecting members having two ends releasably secured to rear ends of the supports respectively;a plurality of sets of transmitter and receiver wherein the transmitters are equally spaced on the first sliding member, the receivers are equally spaced on the second sliding member, the transmitter and the receiver of each set are at the same elevation, and a distance between the transmitter and the receiver of each set is between 1,100 mm and 2,500 mm;first drive means for moving the first sliding member back and forth; andsecond drive means for moving the second sliding member back and forth;wherein the first and second sliding members are configured to synchronously move toward either a rear end of the frame in a first direction or a front end of the frame in a second direction;wherein at least one of the transmitter and the receiver is configured to deviate from a straight line interconnecting the transmitter and the receiver by no more than 10 μm;wherein during the movements of ...

SURFACE MEASUREMENT DEVICE AND METHOD THEREOF

A surface measurement device includes a rotating platform, a motion lever, a measuring module and a control module. The rotating platform rotates an object at a rotating speed. The motion lever is above the rotating platform. The measuring module moves to a variety of measuring positions on the motion lever. When the measuring module is at one of the measuring positions, the measuring module measures the heights of a plurality of sampling points on the surface of the object in a sampling frequency. The control module selectively modifies the rotating speed of the rotating platform or the sampling frequency of the measuring module according to the measuring position of the measuring module to make the distance between the sampling points in at least a region of the surface of the object match a sampling rule. 1. A surface measurement device , comprising:a rotation platform configured to bear an object and rotate the object at a rotating speed;a motion lever located above the rotation platform;a measuring module located on the motion lever, movable to a plurality of measuring positions on the motion lever, and configured to perform a surface height measurement in a sampling frequency onto a plurality of sampling points on a surface of the object when located at one of the measuring positions; anda control module configured to selectively adjust the rotating speed of the rotation platform or the sampling frequency of the measuring module according to the measuring positions of the measuring module on the motion lever to make distances between the sampling points in at least a region of the surface of the object matches a sampling rule.2. The surface measurement device according to claim 1 , wherein when each sampling point in at least a region of the surface of the object has the same distance with other closest sampling point claim 1 , the sampling points in at least a region of the surface of the object match the sampling rule.3. The surface measurement device ...

VIRTUAL BODY SCANNER APPLICATION FOR USE WITH PORTABLE DEVICE

A method for performing measurements includes taking a photograph, via a camera having a position association with a device, of any portion of a subject. The method also includes processing the photograph through a thermographic module to discern a measured portion. The method further includes comparing the measurement data to a stored comparison model to derive fitting data. The method also includes transmitting the fitting data from the device to a server. 1. A method to perform measurements , the method comprising:taking a photograph, via a camera having a position association with a device, of any portion of a subject;processing the photograph through a thermographic module to discern a measured portion;comparing the measured portion to a stored comparison model to derive fitting data; andtransmitting the fitting data from the device to a server.2. The method of claim 1 , in which any portion of the subject comprises the subject's entire body claim 1 , torso claim 1 , lower portion claim 1 , hips claim 1 , feet claim 1 , wrist claim 1 , hand claim 1 , arm claim 1 , leg claim 1 , waist claim 1 , and face.3. The method of claim 1 , in which the position association comprises the camera being within the device claim 1 , and the camera separate from the device but still coupled to the device via a connection claim 1 , the connection comprising a wired connection and a wireless connection.4. The method of claim 1 , in which processing the photograph through a thermographic module to discern the measured portion comprises:transforming the photograph into different heat signature regions;determining which heat signature regions correspond to the subject and which heat signature regions correspond to peripheral objects that are not the subject; andsetting the heat signature regions that correspond to the subject as the measured portion.5. The method of claim 1 , in which the stored comparison model comprises a plurality of comparison models and in which comparing the ...

Method and system for modeling reductant deposit growth

A method and system for modeling growth of reductant deposits for an aftertreatment system on a real time basis using input including exhaust gas temperature, exhaust gas flow rate, and reductant dosing rate. The growth of the reductant deposits are affected by a rate at which reductant accumulates and decomposes from a surface of the aftertreatment system. Thus, the method and system disclosed determines a net reductant deposit growth rate value based on a reductant deposit accumulation rate value and a reductant deposit decomposition rate value. Further, the method and system disclosed determines a reductant mass deposit value based on the net reductant deposit growth rate value. The reductant mass deposit value determined by the method and system may then be used to control a regeneration strategy of the aftertreatment system to eliminate the reductant deposits from the aftertreatment system.

Measuring Thin Films on Grating and Bandgap on Grating

Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack. 1. A method comprising:developing, using a controller, a first effective medium dispersion model for a film stack on a wafer, wherein the film stack includes at least four layers, wherein the first effective medium dispersion model substitutes for all but a first layer of the layers, and wherein the first layer is a top layer of the film stack opposite the wafer;determining, using the controller, a thickness of the first layer using the first effective medium dispersion model;developing, using the controller, a second effective medium dispersion model for the film stack based on the thickness of the first layer, wherein the second effective medium dispersion model substitutes for all but the first layer and a second layer of the layers, and wherein the second layer is adjacent the first layer;determining, using the controller, a thickness of the second layer using the second effective medium dispersion model;developing, using the controller, a third effective medium dispersion model for the film stack based on the thickness of the first layer and the thickness of the second layer, wherein the third effective medium dispersion model substitutes for all but the first layer, the second layer, and a third layer of the layers, and wherein the third layer is adjacent the second layer; anddetermining, using the ...

Non-contact and optical measuring automation system for the profile accuracy of disk cams and method thereof

A non-contact and optical measuring automation system, configured to electrically connect to a computer to measure the profile accuracy of a disk cam, includes a base, a rotating chuck, a moving stage module and a laser displacement meter. The rotating chuck is disposed for clamping the disk cam. The moving stage module includes a first linear motion stage movable relative to the base in a first direction and a second linear motion stage movable relative to the first linear motion stage in a second direction. The computer is able to control the rotation of the rotating chuck and the movement of the moving stage module, and is able to control a beam emitted from the laser displacement meter projecting onto a profile surface of the disk cam so as to obtain a profile deviation value of the disk cam by using the laser triangulation method.

Apparatus and Method for Measuring Thicknesses of Mediums using a Reflecting a Signal that is Near Normal to the Medium

Methods and apparatuses for measuring the thickness on at least one transparent or translucent medium and detecting the presence and/or location of any conductive coating on a non-conductive medium surface are described. 1. An apparatus for measuring thicknesses of at least one transparent or translucent medium , comprising:a light energy source configured for directing light energy to at least one transparent and/or translucent medium; and,a light sensor configured to receive reflected light energy reflected from the at least one transparent and/or translucent medium;the light sensor being configured to receive near normal incidence reflected light energy from the at least one transparent and/or translucent medium.2. The apparatus of claim 1 , wherein the light sensor is configured to remove one or more internal reflections that occur when the light energy is being reflected from the at least one transparent and/or translucent medium.3. The apparatus of claim 1 , wherein the light sensor is arranged in a position in the apparatus such that the light sensor is at a near normal incidence to the reflected energy.4. The apparatus of claim 1 , wherein the light sensor is arranged in a position in the apparatus such that the light sensor is substantially not parallel to the at least one transparent and/or translucent medium;the apparatus further including at least one reflective medium positioned to cause the reflected light energy to the light sensor at a near normal incidence.5. The apparatus of claim 1 , wherein the light sensor is configured to be movable to a position that is at near normal incidence to reflected light energy prior to the light source generating light energy toward the at least one transparent and/or translucent medium.6. The apparatus of claim 1 , further including a housing claim 1 , the light sensor being movably attached within the housing by at least one mounting fixture configured to position the light source at near normal incidence to the ...

LAYERED OBJECT AND MEASURING APPARATUS AND METHOD

A measuring apparatus to identify a material and thickness of each of a plurality of layers included in a layered body, based on a measurement result obtained by measuring a time domain waveform of an electromagnetic wave pulse from the layered body, includes a database configured to store data of a plurality of material candidates and a plurality of thickness candidates, an input unit configured to input a search range of the data stored in the database, and a processing unit configured to reproduce a time domain waveform of an electromagnetic wave pulse from the layered body by employing data of a plurality of material candidates and a plurality of thickness candidates within the search range, and to compare this reproduced time domain waveform and the time domain waveform of the measurement result, thereby identifying the material and thickness of each of the plurality of layers. 1. A measuring apparatus configured to identify a material and thickness of each of a plurality of layers included in a layered body , based on a measurement result obtained by measuring a time domain waveform of an electromagnetic wave pulse from the layered body , comprising:a database configured to store data of a plurality of material candidates and a plurality of thickness candidates;an input unit configured to input a search range of the data of the plurality of material candidates and the plurality of thickness candidates stored in the database; anda processing unit configured to reproduce a time domain waveform of an electromagnetic wave pulse from the layered body by employing data of a plurality of material candidates and a plurality of thickness candidates within the search range, and to compare this reproduced time domain waveform and the time domain waveform of the measurement result, thereby identifying the material and thickness of each of the plurality of layers.2. The measuring apparatus according to claim 1 , wherein the data of the plurality of material candidates ...

MEASUREMENT OF THICKNESS OF THERMAL BARRIER COATINGS USING 3D IMAGING AND SURFACE SUBTRACTION METHODS FOR OBJECTS WITH COMPLEX GEOMETRIES

Embodiments described herein relate to a non-destructive measurement device measurement device and a non-destructive measurement method for determining coating thickness of a three-dimensional (3D) object. In one embodiment, at least one first 3D image of an uncoated surface of the object and at least one second 3D image of a coated surface of the object are collected and analyzed to the determine the coating thickness of the object. 1. A method of determining a thickness of an object coating , comprising:in a non-destructive measurement device, the non-destructive measurement device having at least one image sensor system, positioning a uncoated surface of an object in a field view of the at least one image sensor system, the object having one or more surfaces;collecting a first 3D image of the uncoated surface without chemically or physically changing the one or more surfaces of the object, the first 3D image corresponding to a first surface profile of the uncoated surface;positioning a coated surface of the object in the field view of the at least one image sensor system;collecting a second 3D image of the coated surface without chemically or physically changing the one or more surfaces of the object, the second 3D image corresponding to a second surface profile of the coated surface; andanalyzing the first 3D image and the second 3D image.2. The method of claim 1 , wherein the analyzing the second 3D image and the first 3D image comprises:removing outliers of the first surface profile and the second surface profile;filtering the first surface profile and the second surface profile;overlapping the first surface profile and the second surface profile; andsubtracting the second surface profile from the first surface profile to obtain a thickness of a coating of the object.3. The method of claim 2 , wherein the analyzing the first 3D image and the second 3D image further comprises:mirroring the first 3D image and the second 3D image; andselecting a first area of the ...

SLAG VOLUME EVALUATION METHOD FOR MOLTEN METAL SURFACE

A slag volume evaluation method for a molten metal surface includes calculating an approximation curve indicating a correspondence between a thickness of slag and a density parameter in advance by measuring thicknesses of a plurality of pieces of the slag which float on a surface of a molten metal in a container and differ from each other in thickness, and calculating a value of the density parameter which is correlated to a density in a pixel region corresponding to the plurality of pieces of the slag in a captured image of a molten metal surface in the container; and calculating a volume of the slag by calculating and integrating the thickness of the slag for each of pixels constituting the captured image obtained by capturing an image of the molten metal surface which is an evaluation target, according to a value of the density parameter of each of the pixels and the approximation curve. 1. A slag volume evaluation method for a molten metal surface , in which a volume of slag floating on a surface of a molten metal contained in a container is evaluated according to a captured image of a molten metal surface in the container , the method comprising:calculating an approximation curve indicating a correspondence between a thickness of the slag and a density parameter in advance by measuring thicknesses of a plurality of pieces of the slag which float on the surface of the molten metal and differ from each other in thickness, and calculating a value of the density parameter which is correlated to a density in a pixel region corresponding to the plurality of pieces of the slag in the captured image obtained by capturing an image of the molten metal surface in the container in a state where the plurality of pieces of the slag are floating on the surface of the molten metal;capturing the image of the molten metal surface which is an evaluation target; andcalculating the volume of the slag by calculating the thickness of the slag for each of pixels constituting the ...

LENS REFRACTIVE INDEX DETECTION DEVICE AND METHOD

A lens refractive index detection device is disclosed which has a light source module, a lens center physical thickness detection module and a lens center optical thickness detection module. The light source module includes a first light source component and a second light source component for outputting a collimated light beam, a first light combining component, and a focusing component. The lens center physical thickness detection module includes a first imaging component and a second imaging component. The lens center optical thickness detection module includes a first photodetection component and a second photodetection component, a beam splitting component, a partial reflection mirror, and a movable reflection mirror. The lens refractive index detection device enables simple operation, fast and non-destructive on-line detection, and is also applicable to lenses with irregular surfaces, such as aspherical lenses, cylindrical lenses, and finished lenses. A lens refractive index detection method is also provided. 1. A lens refractive index detection device , comprising a light source module , a lens center physical thickness detection module , and a lens center optical thickness detection module , whereinthe light source module includes a first light source component and a second light source component for outputting a collimated light beam, a first light combining component, and a focusing component, wherein the lens center physical thickness detection module includes a first imaging component and a second imaging component, and wherein the lens center optical thickness detection module includes a first photodetection component and a second photodetection component, a beam splitting component, a partial reflection mirror, and a movable reflection mirror,wherein the second photodetection component, the partial reflection mirror, the beam splitting component, the focusing component and the first light combining component are arranged along a first optical axis ...

METHOD AND INSTALLATION FOR MEASURING THE GLASS DISTRIBUTION IN CONTAINERS

A method for measuring the distribution of the thickness of glass in glass containers at a high temperature comprises: 12462. A method for measuring the distribution of the thickness of the glass in glass containers () at a high temperature leaving shaping cavities () , the method applying at least one sensor sensitive to the infrared radiation () emitted by the containers () suitable for producing an image of the distribution of the infrared radiation , characterized in that it includes for each container the following steps:{'b': '2', 'selecting at least one inspection area (Z) of the container () so that the relationship of the thickness of the glass has a function of intensity of the infrared radiation is homogenous over the whole of this inspection area (Z),'}{'b': '11', 'measuring, for each inspection area (Z), the glass thickness of the container in at least one measurement point belonging to the inspection area (Z), by means of a contactless point-like thickness measurement system ().'}{'b': 6', '2, 'measuring by means of a sensor sensitive to infrared radiation (), the distribution of the infrared radiation emitted by the container () at least in each inspection area (Z),'}determining, for each inspection area (Z), a relationship between the measurement of the thickness taken at the measurement point and the relevant infrared radiation at said measurement point,and from said relationship and from the distribution of the relevant infrared radiation of each inspection area, determining the distribution of the glass thickness of the container of each inspection area (Z)22. The method according to claim 1 , characterized in that it consists of measuring the glass thickness of the container () along a direction perpendicular to the surface of the container by means of the point-like measurement system.322. The method according to claim 1 , characterized in that it consists of measuring the glass thickness of the container () in the different neighboring ...

MEASURING APPARATUS, IMPRINT SYSTEM, MEASURING METHOD, AND DEVICE MANUFACTURING METHOD

An measuring apparatus includes: a storage unit configured to store a relationship, regarding an irradiation condition predetermined based on a correlation between a characteristic of each of beams of reflected light obtained from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and a processing unit configured to, based on a characteristic of reflected light from a pattern formed on a substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain a thickness of a residual layer in a recessed portion of the pattern formed on the substrate. 1. A measuring apparatus for , based on a characteristic of reflected light obtained by irradiating with light a pattern formed on a substrate , obtaining a thickness of a residual layer in a recessed portion of the pattern formed on the substrate , the measuring apparatus comprising:a storage unit configured to store a relationship, regarding an irradiation condition based on a correlation between a characteristic of each of beams of reflected light from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; anda processing unit configured to, based on a characteristic of the reflected light from the pattern formed on the substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain the thickness of the residual layer in the recessed portion of the pattern formed on the substrate.2. The measuring apparatus ...

Stationary Dimensioning Apparatus and Method Employing Fluorescent Fiducial Marker

A stationary dimensioning apparatus dimensions a load on a movable conveyance by detecting a barcode fiducial that is situated on the conveyance and by detecting a large number of points in space that represent points on the surface of the load. The barcode fiducial fluoresces as a predetermined wavelength, and the points in space are detected in the form of electromagnetic energy at the same predetermined wavelength. The electromagnetic energy is subjected to a band pass filter that rejects all but the predetermined wavelength before the remaining electromagnetic energy is impinged on a camera sensor. The location of the barcode fiducial on the conveyance is compared with a reference location of a reference barcode fiducial, and a translation vector and a rotation vector between them are calculated. The translation and rotation vectors are then employed in a transformation matrix that is used to transform each of the detected points in space into transformed points in space to generate a characterization of the dimensions of the load.

Scatterometry method and system

A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.

ROW BAR THICKNESS MEASUREMENT DEVICE, SYSTEM AND METHODS

A device and system for precise measurement of a thickness and determination of a profile of a slider row bar. The device includes a bar mount fixture having a structure for supporting the row bar by an edge, a first probe and a second probe on either side of the row bar, each probe being a non-contact sensor with a measurement precision of 0.5 micrometer, with each of the probes laterally moveable in relation to the bar mount fixture. Also included are methods of using a device for precisely measuring of a thickness and determining of a profile of a slider row bar. 1. A device for measuring a thickness and determining a profile of a slider row bar , the device comprising:a bar mount fixture having a structure for supporting the row bar by a lower edge thereon,a first probe and a second probe, each probe being a non-contact sensor with a measurement precision of 0.5 micrometer, each of the probes oriented toward the structure and laterally moveable in relation to the bar mount fixture.2. The device of wherein the first probe and the second probe are laterally moveable.3. The device of wherein the first probe and the second probe can move at a speed of 1 to 40 mm/second.4. The device of wherein the structure for supporting the row bar is a standard gage.5. The device of wherein the standard gage has a thickness of 0.1 mm to 1 mm.6. The device of wherein the first probe and the second probe are fixedly mounted on a laterally moveable base.7. The device of wherein the probes are spectral-interference laser sensors.8. The device of wherein the probes are precise to within 0.4 micrometer.9. A system for determining the thickness and profile of a slider row bar claim 1 , the system comprising the device of and software configured to present the measured thickness and determined profile to a user.10. The system of wherein the software includes a graphical output.11. A device for measuring a thickness and determining a profile of a slider row bar having an ABS side claim 9 ...

FILM THICKNESS MEASUREMENT DEVICE, FILM THICKNESS MEASUREMENT METHOD, FILM THICKNESS MEASUREMENT PROGRAM, AND RECORDING MEDIUM FOR RECORDING FILM THICKNESS MEASUREMENT PROGRAM

A film thickness measurement device includes a light output unit that outputs measurement light, a spectroscopic detection unit that detects detection light, and an analysis unit that compares a measured reflectance for each wavelength of a measurement object with a theoretical reflectance and analyzes a film thickness of a first film and a film thickness of a second film. The analysis unit acquire candidates for optimal solutions of the film thicknesses using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a first wavelength range and determines the optimal solutions of the film thicknesses out of the candidates for the optimal solutions using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a second wavelength range. 1: A film thickness measurement device measuring a film thickness of a first film and a film thickness of a second film in a measurement object in which the first film and the second film are repeatedly alternately stacked on a substrate , the film thickness measurement device comprising:a light source configured to output measurement light to the measurement object;a spectroscopic detector configured to spectroscopically detect detection light from the measurement object; andan analyzer configured to compare a measured reflectance for each wavelength of the measurement object which is acquired from a result of detection by the spectroscopic detector with a theoretical reflectance and to analyze the film thickness of the first film and the film thickness of the second film,wherein the analyzer is configured to:acquire candidates for optimal solutions of the film thickness of the first film and the film thickness of the second film using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a ...

METHOD AND DEVICE FOR AUTOMATICALLY MEASURING TRANSFER AND HANDOFF PLATFORM ON DRIVE CHIP

An automatic measuring device includes a platform, a pre-positioned suction nozzle, a reverse suction nozzle, a sensor, and a reflection sheet. The sensor is fixed on a side of the reverse suction nozzle, and the reflection sheet is fixed on a side of the pre-positioned suction nozzle and is located below the sensor. The method includes the following steps: controlling, by the automatic measuring device, a light source to emit light to the reflection sheet; detecting, by the sensor, a measurement value of the reflection sheet; determining, by the automatic measuring device, a change curve of a measurement value and a height according to a material of the reflection sheet; finding, by the automatic measuring device from the change curve, a height value corresponding to the measurement value; and determining, by the automatic measuring device according to the height value, whether the transfer and handoff platform can pass examination. 1. A detection method of an automatic measuring device for a transfer and handoff platform on a drive chip , wherein the automatic measuring device comprises: a platform , a pre-positioned suction nozzle , a reverse suction nozzle , a sensor , and a reflection sheet , whereinthe pre-positioned suction nozzle is placed on the platform, the reverse suction nozzle is fixedly disposed above the platform, and when the platform rotates, the pre-positioned suction nozzle is driven to move to a position directly below the reverse suction nozzle; the sensor is fixed on a side of the reverse suction nozzle, and the reflection sheet is fixed on a side of the pre-positioned suction nozzle and is located below the sensor; and the method comprises the following steps:controlling, by the automatic measuring device, a light source to emit light to the reflection sheet;detecting, by the sensor, a measurement value of the reflection sheet;determining, by the automatic measuring device, a change curve of a measurement value and a height according to a ...

Measurement tool and method for measuring thickness of evaporated film of large-sized substrate

The present disclosure relates to a measurement tool, for measuring the thickness of an evaporated film at a particular position on a large-sized substrate. The measurement tool includes: a measurement part, having at least one measurement surface onto which at least one sampling substrate sheet is positional and fixable; and a support part connected with the support part and configured to be supportable on an edge frame of a mask so as to place the measurement part in an inside of the edge frame of the mask through the support part. The present disclosure also relates to a method of measuring a thickness of an evaporated film of a large-sized substrate by using the above measurement tool.

MEASUREMENTS OF AN INTEGRATED CIRCUIT CHIP AND CONNECTED CHIP CARRIER TO ESTIMATE HEIGHT OF INTERCONNECT

Systems and methods are provided for obtaining measurements of an integrated circuit chip and a connected carrier to obtain the measurements of the interconnect heights. More specifically, a method is provided that includes defining a top best fit reference plane and a bottom best fit reference plane, and adjusting the top best fit reference and the bottom best fit reference to be superposed to one another. The method further includes calculating first distances between each height measurement for a first set of points and the adjusted top best fit reference plane, and calculating second distances between each height measurement for a second set of points and the adjusted bottom best fit reference plane. The method further includes calculating height values of a gap or interconnect between the first substrate and the second substrate by subtracting the thickness of the first substrate and the second distances from the first distances. 1. A method of manufacturing an integrated circuit chip assembly , comprising:defining a top reference plane from measurement heights of a plurality of top reference points on a top surface of a first substrate;defining a bottom reference plane from measurement heights of a plurality of bottom reference points on a bottom surface of the first substrate;adjusting data from the top reference plane and data from the bottom reference plane such that the top reference plane and the bottom reference plane are superposed to one another;obtaining measurement heights of a first set of points on an external surface of a second substrate using an x, y, z coordinate measuring system in relation to data from the top reference plane;calculating first distances between each measurement height of the first set of points on the external surface of the second substrate and the adjusted top reference plane;obtaining measurement heights of a second set of points on the bottom surface of the first substrate using the x, y, z coordinate measuring system in ...

APPARATUS AND METHOD OF TESTING A STICK

An apparatus of testing a stick includes a tension unit that applies tension to a stick having openings formed therein and fixes the stick in place, a first testing unit that is spaced apart from the stick and tests a surface of the stick, a light dispersion unit that reflects light emitted from the first testing unit, a distance measurement unit that measures a third distance from a bottom surface of the stick to the light dispersion unit, and a control unit that calculates a second distance from a starting point of a protrusion of the stick tested by the first testing unit to the light dispersion unit, calculates a difference between the second distance and the third distance so as to calculate a height of the protrusion and determines whether the stick is defective or not, based on the height of the protrusion. 1. An apparatus for testing a stick , comprising:a tension generating unit fixing a stick having openings formed therein and applying tension to the stick;a first testing disposed spaced-apart from the stick and testing a surface of the stick;a light dispersion unit disposed in an opposite side of the first testing unit based on the stick and reflecting light emitted from the first testing unit;a distance measurement unit disposed in an opposite direction to that of the stick based on the light dispersion unit and determining a third distance from a bottom surface of the stick to the light dispersion unit; anda control unit determining a second distance from a starting point of a protrusion of the stick tested by the first testing unit to the light dispersion unit, determining a difference between the second distance and the third distance so as to determine a height of the protrusion, and determining whether the stick is defective or not, based on the height of the protrusion.2. The apparatus of claim 1 , wherein the first testing unit claim 1 , the light dispersion unit claim 1 , and the distance measurement unit are capable of linearly moving in a ...

FORAGE BIOMASS ESTIMATION DEVICES, SYSTEMS, AND METHODS

Some illustrative embodiments of a system for estimating forage growth at an area of interest may include a mobile support, a laser sensor, and an ultrasonic sensor. The laser sensor and the ultrasonic sensor may each be supported by the mobile support, and may each be configured to sense the forage growth at the area of interest. The laser sensor may generate laser forage data corresponding to the forage growth, and the ultrasonic sensor may generate ultrasonic forage data corresponding to the forage growth. A measured forage growth value may be determined as a function of the laser forage data and the ultrasonic forage data. 1. A system for estimating forage growth at an area of interest , comprising:a mobile support;a laser sensor supported by the mobile support and configured to sense the forage growth at the area of interest to generate laser forage data corresponding to the forage growth;an ultrasonic sensor supported by the mobile support and positionally associated with the laser sensor, the ultrasonic sensor being configured to sense the forage growth at the area of interest to generate ultrasonic forage data corresponding to the forage growth; and receive the laser forage data from the laser sensor and the ultrasonic forage data from the ultrasonic sensor; and', 'determine a measured forage growth value as a growth function of the laser forage data and the ultrasonic forage data., 'a processing unit configured to2. The system of claim 1 , wherein the forage growth corresponds to a forage height.3. The system of claim 1 , wherein the mobile support is configured to move relative to the area of interest.4. The system of claim 1 , wherein the ultrasonic sensor has a signal frequency of 120 Mhz.5. The system of claim 1 , wherein the ultrasonic sensor and the laser sensor are each configured to sense the forage growth at a sampling rate between up to 20 Hz.6. The system of claim 1 , wherein the laser sensor is configured to operate at a single wavelength of ...

METHOD AND APPARATUS FOR INSPECTING LIQUID FILLED HOLLOW TRANSPARENT ARTICLES

An article-inspection apparatus includes a light source for directing light energy with multiple wavelengths at the article and multiple sensors to receive light reflected from external and internal surfaces of the wall of the article, with the reflections being used to compute a physical characteristic, e.g., wall thickness, of the container, due to the light absorption characteristics of the material of the wall of the article. A single light sensitive sensor may be used if the light source wavelengths can be selectively transmitted. The apparatus can be used for inspecting transparent plastic containers that are filled (with a liquid) or unfilled. The apparatus may determine the wall thickness of transparent plastic containers even if they have in-molded features or decorations that make their inner and outer walls non-parallel. 1. An apparatus for inspecting a transparent hollow article , the apparatus comprising light energy at a first, absorption wavelength that is primarily absorbed by the portion of the transparent hollow article; and', 'light energy at a second, reference wavelength that is not primarily absorbed by the portion of the transparent hollow article;, 'at least one light source for emitting light energy at a portion of the transparent hollow article as the transparent hollow article moves along a travel path past the at least one light source, wherein the light energy emitted by the at least one light source comprisesat least one light sensor for sensing light energy emitted by the at least one light source that is reflected by the portion of the transparent hollow article to the light sensor assembly, wherein the at least one light sensor is on the same side of the travel path of the transparent hollow article as the at least one light source; anda processor in communication with the at least one light sensor, wherein the processor is programmed to compute a wall thickness of the portion of the transparent hollow article based on an intensity ...

Three-dimensional scatterometry for measuring dielectric thickness

Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

INSPECTION METHOD FOR MULTILAYER SEMICONDUCTOR DEVICE

An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of materials of interests and obtaining calibration quality curves. 1. An inspection method for a multilayer semiconductor device , comprising:{'claim-text': ['a test substrate including a test covered portion and a test bare portion; and', 'a first test layer disposed on the test substrate in the test covered portion, wherein the first test layer is made of a first material of interest;'], '#text': 'preparing a test sample of the multilayer semiconductor device including:'}{'claim-text': ['a first reference substrate having a first covered portion and a first bare portion; and', 'a first layer disposed on the first reference substrate in the first covered portion, wherein the first layer is made of the first material of interest;'], '#text': 'preparing a plurality of first reference samples, wherein each of the plurality of first reference samples includes:'}choosing a first region of wavelength corresponding to an absorption edge of the first material of interest;{'claim-text': ['measuring a thickness of the first layer as one of the plurality of first thickness;', 'measuring transmittances of the first covered portion and the first bare portion with a light source emitting lights at the first region of wavelength, to obtain first transmittances of the first covered portion and first bare transmittances of the first bare portion; and', 'calculating an average ratio of the first transmittances to the first bare transmittances as one of the plurality of first quality values;'], '#text': 'performing a first calibration process for each of the first reference samples to obtain a plurality of first quality values and a plurality of first thicknesses corresponding to the ...