Charged particle detection for spectroscopic techniques

Hard X-ray photoelectron spectroscopy apparatus and system

Method and system for evaluating aging resistance of cable metal sheath protector

The invention relates to the technical field of cable device quality assessment, and discloses a cable metal sheath protector aging resistance assessment method and system, and the method comprises the steps: applying a DC aging voltage to a cable metal sheath protector, and determining a ZnO voltage-sensitive ceramic section sample containing a crystal boundary; according to the method, deep etching is carried out on a ZnO pressure-sensitive ceramic section sample containing the grain boundary in the grain boundary depth direction to obtain content distribution of grain boundary oxygen under different etching depths, so that the proportion of the grain boundary oxygen etched for the first time is determined, and the aging resistance of the cable metal sheath protector is evaluated according to the size of the proportion of the grain boundary oxygen etched for the first time, so that the aging resistance of the cable metal sheath protector is evaluated. Therefore, the aging resistance of ...

New method for regulating and controlling performance and sensitivity of typical explosives and powders such as RDX by X rays

The invention relates to a method for rapidly regulating and controlling the performance and the sensitivity of explosives and powders based on X rays, and belongs to the field of regulation and control of the performance and the sensitivity of the explosives and powders. X-ray irradiation is carried out on the explosives and powders for different times, so that chemical bonds of the explosives and powders are fractured to different degrees, the internal structures or molecular forms of the explosives and powders are changed, and the performance and sensitivity of the explosives and powders are induced to change rapidly under specific conditions. A scanning electron microscope (SEM), a Raman spectrum (Raman Spectra), a Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) are used for carrying out crystal structure characterization, crystal form characterization and molecular structure characterization on the explosives and powders ...

SYSTEM AND METHOD USING X-RAYS FOR DEPTH-RESOLVING METROLOGY AND ANALYSIS

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x‑ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x‑ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x‑ray beam; irradiating the sample with the first x‑ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x‑ray beam from the sample and detecting x‑ray fluorescence x‑rays and/or photoelectrons from the sample.

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEASURING CONTENT OF SILICON CARBIDE BY USING XPS

A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

ELECTRON SPECTROMETER AND ANALYTICAL METHOD

An electron spectrometer is provided which can collect spectra in a reduced measurement time. The electron spectrometer (100) includes an electron analyzer (30) for providing energy dispersion of electrons emitted from a sample (S), a detector (40) having a plurality of detection elements juxtaposed and arranged in the direction of energy dispersion of the dispersed electrons, and a processor (60). The processor (60) operates (i) to sweep a measurement energy in first incremental energy steps (ΔE1) within the analyzer, to detect the dispersed electrons with the detection elements, and to obtain a plurality of resulting first spectra; (ii) to interpolate points of measurement in each of the first spectra; and (iii) to generate a spectral chart in second incremental energy steps (ΔE2) smaller than the first incremental energy steps (ΔE1) on the basis of the first spectra for which the points of measurement have been interpolated.

Charged particle detection for spectroscopic techniques

Charged particles, received from an energy dispersive spectroscopic analyser 14 as a charged particle beam 12, are accelerated towards a detector 16. The accelerated charged particles are received at an array of detecting pixels, the array of detecting pixels forming the detector. The charged particles arriving at the detector have a spread in the energy dispersive direction. The apparatus includes an electrostatic lens element 18 to accelerate the particles and focus and magnify the beam. The invention enables low energy particles (<100eV) to be detected directly at a pixelated detector array without the use of an electron multiplier such as a microchannel plate (MCP) between the analyser and detector.

Multichannel vacuum extreme ultraviolet - soft X ray monochromator

INSPECTION METHOD

This inspection method is for inspecting, under atmospheric pressure, the condition of surface electrons of electrode materials or solid-state electrolyte materials for lithium secondary batteries. In this inspection method, the condition of surface electrons of an electrode material for lithium secondary batteries is inspected from the ionization potential specific to the electrode material for lithium secondary batteries or the solid-state electrolyte material.

Systems And Methods For Combined Reflectometry And Photoelectron Spectroscopy

Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled. 1. A metrology system comprising:an x-ray illumination source configured to generate an amount of x-ray illumination radiation;one or more x-ray illumination optical elements disposed in an illumination path between the x-ray illumination source and a specimen under measurement, wherein the one or more x-ray illumination optical elements direct the amount of x-ray illumination radiation from the x-ray illumination source to a measurement area of the specimen under measurement;an x-ray detector configured to receive an amount of radiation from the specimen in response to the amount of x-ray illumination radiation, wherein the x-ray illumination source and the x-ray detector are disposed in a X-Ray Reflectometry (XRR) measurement configuration, and wherein the x-ray detector generates an amount of XRR measurement data based on the received amount of radiation; anda photoelectron detector configured to receive an amount of electrons emitted from the specimen in response to the amount of ...

Spectroscopy and imaging system

An apparatus and method for characterisation of a sample via spectroscopy and/or imaging. The apparatus comprises a first detector for imaging or spectroscopy, a second detector for imaging or spectroscopy, and a toroidal capacitor type electrostatic energy analyser. The toroidal capacitor type electrostatic energy analyser comprises a first and a second entrance aperture arranged such that charged particles emitted from a sample and passing through the first entrance aperture traverse a first trajectory through the toroidal capacitor type electrostatic energy analyser to be incident at the first detector, and charged particles emitted from a sample and passing through the second entrance aperture traverse a second trajectory through the toroidal capacitor type electrostatic energy analyser to be incident at the second detector. A deflection assembly arranged between the sample and the analyser may be used to direct charged particles emitted from the sample towards the first and/or second ...

Method and system for virtually executing an operation of an energy dispersive X-ray spectrometry (EDS) system in real-time production line

Provided is a method for virtually executing an operation of an energy dispersive x-ray spectrometry (EDS) system in real time production line by analyzing a defect included in a material undergoing inspection based on computer vision, the method including receiving a scanning electron microscope (SEM) image of the material including the defect, extracting an image-feature from the SEM image of the material, classifying the extracted image-feature under a predetermined label, predicting, based on the classified image-feature, an element associated with the defect included in the material and a shape of the predicted element, and grading the defect included in the material based on comparing the predicted element with a predetermined criteria.

METHOD OF GENERATING ELEMENTAL MAP AND SURFACE ANALYZER

A method of generating an elemental map includes : acquiring a plurality of correction channel images by scanning a surface of a standard specimen having a uniform elemental concentration with a primary beam and generating a correction channel image for each channel; generating correction information for each pixel of each correction channel image among the plurality of correction channel images based on a brightness value of the pixel; acquiring a plurality of analysis channel images by scanning a surface of a specimen to be analyzed with the primary beam and generating an analysis channel image for each channel; correcting brightness values of pixels constituting an analysis channel image among the plurality of analysis channel images based on the correction information; and generating an elemental map of the specimen to be analyzed based on the plurality of analysis channel images having pixels with corrected brightness values.

ROOFING MEMBRANES WITH IMPROVED ADHESIVE BONDING STRENGTH

Systems and methods are described herein for manufacturing and using roofing membranes that are faster and easier to install than conventional adhesive-only membrane materials. In some embodiments, membrane materials are surface treated using a plasma flow, e.g., a blown-arc plasma flow, atmospheric plasma, corona plasma, or from portable plasma units, generated by passing a compressed plasma-generating gas through an electrical current to form the plasma-treated roofing membrane. The plasma treatments described herein may be applied as part of the manufacturing process, or in-situ at the site of roof installation. In some embodiments, membrane materials have surface chemistries, roughnesses and other surface characteristics that yield desired adhesion properties.

Method for measuring the coverage rate of quantum dot surface ligand

Building method for shale composite organic molecular model

QUICK METHOD FOR DETECTING PATHOGENIC BACTERIA BY SERS SPECTROSCOPY

The invention relates to a method for detecting pathogenic bacteria in aqueous media. According to the invention, the method comprises the steps of synthesis of a colloidal suspension of gold colloidal nanoparticles coated with chitosan, concentration in two centrifugation steps for 10 min at 8000 rpm, resuspension in distilled water, selection and cultivation of pathogens of the class S. aureus and E. faecalis, placing of a volume of 2 μl of pathogen suspended in distilled water on a glass plate with drying, addition of a volume of 2 μl of colloidal solution, by dripping, with sample drying at room temperature, followed by spectral analysis and image processing, to result in SERS distribution maps wherefrom the biochemical profile of the pathogen is identified, with a detection rate of approximately 30 min.

Accelerated test method for testing aging performance of nonmetal material for oil and gas conveying

Deterioration analysis method

XPS analysis test method for structure and component analysis of chitosan hydrogel

The invention discloses an XPS analysis and test method for structure and component analysis of chitosan hydrogel, and relates to the field of photoelectron spectrum measurement, in particular to an XPS analysis and test method for structure and component analysis of chitosan hydrogel. The method comprises the following two parts: a test method: testing a chitosan powder sample and a hydrogel sample, and reading test data into XPS analysis software for peak-dividing fitting treatment; the analysis method comprises the following steps: calculating the deacetylation degree, the total crosslinking rate, the single-link crosslinking rate, the double-link crosslinking rate and other parameters of the chitosan hydrogel. According to the method, the test variables and fitting parameters of the XPS are subjected to programmed optimization, so that the accuracy of a test result is improved, the components of the chitosan hydrogel are determined, and a foundation is laid for reasonably speculating ...

METHOD OF CHARACTERIZING A LAYER STACK WITH ELECTRICAL MEASUREMENTS OF MASS AND INDUCED BY X-RAY PHOTOELECTRON UNDER TENSION, LAYER STACK FOR THE WORK METHOD, METHOD OF MANUFACTURING THE LAYER STACK ACCORDING TO THE INVENTION

Method and system for non-destructive metrology of thin layers

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition ...

Method for measuring polymer sub-layer photoelectron spectrum by using plasma etching

Spin detector

Tobacco shred perfuming uniformity detection method based XPS

本发明涉及一种基于XPS的烟丝加香均匀性检测方法，属于烟丝检测技术领域。该检测方法包括未加香烟丝的XPS分析、加香后样品的XPS分析、数据处理、数据计算、加香均匀性判定五大步骤。本发明方法不用采用外加特征标记物或选择特定成分作为特征标记物进行分析，简单可行。与其他气相色谱‑质谱分析均匀性方法比较，其检测时间只需要3‑5min左右，优于一般的气相色谱‑质谱分析的40‑50min，检测效率提高了近10倍，易于推广应用。

METHOD FOR MEASURING THE SPECIFIC RESISTANCE OF SEMICONDUCTOR MATERIALS

The invention relates to a method for measuring the specific resistance of a semiconductor material of unknown composition by means of an x-ray photoelectron spectroscopy (XPS) measurement apparatus, comprising the following steps: a) applying an ionic liquid to the semiconductor material and creating an ultra-high vacuum; b) irradiating the ionic liquid with x-ray radiation in order to induce the emission of photoelectrons from the ionic liquid and simultaneously irradiating with low-energy electron radiation for charge neutralization; c) detecting and measuring the kinetic energy of the emitted photoelectrons while varying the intensity of the low-energy electron radiation; d) calculating the changes in kinetic energy of the emitted photoelectrons at the respective intensity of the low-energy electron radiation and, therefrom, the changes in binding energy (ΔΕΒ) in comparison to the initial values in each case before the start of irradiation with low-energy electrons; and e) correlating ...

INSULATING DEVICE

An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

SAMPLE HOLDER AND X-RAY PHOTOELECTRON SPECTROSCOPE

This sample holder (30) comprises: a sample mount (34), a secondary electron generation plate (31), and a movement mechanism (33). The irradiation of X-rays (14) onto the secondary electron generation plate (31) causes the same to emit secondary electrons (38). The movement mechanism (33) moves the secondary electron generation plate (31) in relation to the sample mount (34). The secondary electron generation plate (31) or movement mechanism (33) is configured such that the distance between a first primary surface (34a) of the sample mount (34) and a part (32) of the secondary electron generation plate (31) positioned on the path of X-rays (14) irradiated onto a sample (20) changes as the secondary electron generation plate (31) moves.

β-FORM SIALON FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE

A β-form Sialon fluorescent substance containing europium as a solute and satisfying P8/P80≤0.9, where P8 [at%] is the content of aluminum element at a depth of 8 nm from a surface of the fluorescent substance and P80 [at%] is the content of aluminum element at a depth of 80 nm from the surface of the fluorescent substance, the contents being obtained by X-ray photoelectron spectroscopy; and a light-emitting device including the β-form Sialon fluorescent substance.

Method for production and identification of Weyl semimetal

Disclosed is a method for producing and identifying a Weyl semimetal. Identification is enabled via a combination of the vacuum ultraviolet (low-photon energy) and soft X-ray (SX) angle resolved photoemission spectroscopy (ARPES). Production generally requires providing high purity raw materials, creating a mixture, heating the mixture in a container at a temperature sufficient for thermal decomposition of an impurity while preventing the possible reaction between the side walls of the container and the raw materials, depositing the resulting compound and a transfer agent onto the bottom surface of the ampule, differentially heating the ampule, and allowing a chemical vapor transport reaction to complete.

Method of detecting or quantifying detection target in specimen, composite particle, and reagent

According to one embodiment, a method of detecting or quantifying a detection target in a specimen includes: irradiating a reaction mixture containing composite particles and the specimen with light to promote binding between the composite particles and the detection target; and performing measurement on the reaction mixture irradiated with the light to detect or quantify the detection target. The composite particles each include a carrier particle including two or more regions having different physical properties on a surface, and an affinity substance carried on the carrier particle and having affinity to the detection target. The light can be absorbed by at least one of the two or more regions.

Method for detecting inclusions in steel

SYSTEM AND METHOD FOR GRAPHENE-STRUCTURE DETECTION DOWNHOLE

A method may comprise sampling a wellbore fluid; analyzing the wellbore fluid and determining a presence of a graphene-like substrate, a concentration of the graphene-like substrate, or both, in the wellbore fluid; and correlating the presence and the concentration of the graphene-like substrate to at least one subterranean formation characteristic.

APPARATUS AND METHOD FOR MEASURING ENERGY OF ELECTRONS

Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured. 1. An apparatus configured to measure energy of photoelectrons , the apparatus comprising:a sample holder configured to hold a sample;a vacuum chamber configured to vacuum a surrounding of the sample held on the sample holder;a primary excitation light irradiator configured to irradiate a primary excitation light to the sample held on the sample holder;a reference excitation light irradiator configured to irradiate a reference excitation light to the sample held on the sample holder;a photoelectron spectrometer; andan accelerator configured to accelerate photoelectrons emitted from the sample held on the sample holder toward the photoelectron spectrometer,wherein the accelerator allows the primary excitation light and the photoelectrons to pass therethrough.2. The measuring apparatus according to claim 1 , wherein the accelerator comprises an acceleration electrode including an opening.3. The measuring apparatus according to claim 1 , wherein one of the primary excitation light irradiator and the reference excitation light irradiator is selectively driven.4. The measuring apparatus according to claim 3 , ...

LIGHT GUIDE PLATE FOR IMAGE DISPLAY

There is provided a light guide plate for image display includes: a first laminate (11) configured to be provided with a first resin base (1), a first anchor coat layer (2), and a first barrier layer (3) in this order; and a hologram layer (4), wherein the first barrier layer (3) is made of silicon oxynitride as a main component and a nitrogen element formulation, which is determined by X-ray photoelectron spectroscopy (XPS), in the first barrier layer (3) is greater than 0 atm % and 25 atm % or less.

Metallblech

Metallblech zur Herstellung einer Abscheidungsmaske mit einer Mehrzahl von darin ausgebildeten Durchgangslöchern, wobei das Metallblech aus einer Eisenlegierung hergestellt ist, die 30 bis 54 Massen-% Nickel enthält, wobei die Dicke des Metallblechs 85 µm oder weniger beträgt, undwobei:wenn eine Zusammensetzungsanalyse einer ersten Oberfläche des Metallblechs unter Verwendung einer Röntgenphotoelektronenspektroskopie durchgeführt wird, ein Verhältnis A1/A2, das durch das Ergebnis der Röntgenphotoelektronenspektroskopie erhalten wird, 0,4 oder weniger beträgt, wobei A1 die Summe eines Planardimension-Peakwerts von Nickeloxid und eines Planardimension-Peakwerts von Nickelhydroxid ist und A2 die Summe eines Planardimension-Peakwerts von Eisenoxid und eines Planardimension-Peakwerts von Eisenhydroxid ist; undin der Zusammensetzungsanalyse der ersten Oberfläche des Metallblechs mittels der Röntgenphotoelektronenspektroskopie ein Einfallswinkel eines Röntgenstrahls, der zu dem Metallblech auf ...

Method for comparing protection effect of different oxide films to metal matrix and application thereof

HARD X-RAY PHOTOELECTRON SPECTROSCOPY ARRANGEMENT AND SYSTEM

SEMICONDUCTOR CHIP WITH FIRST PROTECTIVE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP WITH FIRST PROTECTIVE FILM, AND METHOD FOR EVALUATING LAMINATE OF SEMICONDUCTOR CHIP AND FIRST PROTECTIVE FILM

A semiconductor chip with a first protective film according to the present embodiment is provided with: a semiconductor chip; and a first protective film formed on a bump-containing surface of the semiconductor chip, wherein when analyzing a parietal portion of a bump by X-ray photoelectron spectroscopy, the ratio of the concentration of tin to the total concentration of carbon, oxygen, silicon, and tin is 5% or more.

Method for analyzing the form content of iron and phosphorus compounds in sludge

Method for detecting graphene oxide functional group

A darkroom assembly and detection device

Single crystal silicon surface cross-scale antifriction antiwear modification method and characterization method

Quantitative analyzing method suitable for clay shale mineral compositions

Fruit sugar degree detection method and computer equipment

The invention provides a fruit sugar degree detection method and computer equipment. The detection method comprises the following steps: irradiating a to-be-detected fruit by using specified rays; acquiring front energy spectrum information before the specified ray passes through the to-be-detected fruit and rear energy spectrum information after the specified ray passes through the to-be-detected fruit; obtaining attribute information of the fruit to be detected according to the front energy spectrum information and the rear energy spectrum information; and calculating the sugar degree information of the detected fruit according to the attribute information, so that the sugar degree of the fruit can be automatically detected on line at a high speed under the condition that the fruit is not damaged, the detection result of the sugar degree is very accurate, the accuracy of grading the fruit according to the sugar degree can be improved, the competitiveness of the fruit in the sales process ...

Method for preparing and evaluating test piece for interface bonding and interaction effect of cementing material and additive

The invention discloses a method for preparing and evaluating a test piece for testing the interface bonding and interaction effect of a cementing material and an additive, which mainly comprises the following steps of: preparing an interaction test piece of the cementing material and the additive through a bonding and interaction interface construction process, and positioning the range and the specific position of a bonding interaction interface of the cementing material and the additive; an interaction interface test piece is obtained based on a precision cutting technology, and the interface interaction degree between the cementing material and the additive is evaluated by adopting a focused ion beam scanning electron microscope (FIB-SEM) and X-ray energy spectrum analysis (EDS). According to the method, the bonding interface between the cementing material and the additive can be accurately constructed, the position and range of the bonding and interaction interface can be accurately ...

COMPUTER-IMPLEMENTED METHOD FOR GENERATING EVENT-AVERAGED AND TIME-RESOLVED SPECTRA

A computer-implemented method is described for generating event-averaged and time-resolved spectra, from a plurality of time-resolved spectra of charged particles emitted from a surface (3) of a sample (2), at which surface (3) an event is repeated cyclically, the method comprising the steps of receiving (101), from the charged particle analyser (1), the plurality of time-resolved spectra covering a plurality of events, obtaining (102) at least one selected part (9, 10) of the series of time-resolved spectra, matching (103) the at least one selected part (9, 10) with other parts of the series of time-resolved spectra to find similar parts, and thereby determining points in time for other events in the plurality of events, and generating (104) the event-averaged and time-resolved spectra of the event based on the series of time-resolved charged particle energy spectra and the determined points in time.

HARD X-RAY PHOTOELECTRON SPECTROSCOPY APPARATUS

[Problem] 125.-. (canceled)26. A hard X-ray photoelectron spectroscopy apparatus , comprising:an X-ray source;an analyzer;a sample manipulator;an analysis chamber; andvacuum evacuation systems;wherein, in a three-dimensional space defined by a XYZ coordinate axis system, a plate-like sample is arranged to be rotatable around the Z axis by said sample manipulator;wherein said X-ray source comprises:an electron gun that accelerates and further focuses electrons;a target that is irradiated with the electrons accelerated and focused by said focusing electron gun to generate an X-ray;a monochromator crystal assembly, wherein the monochromator crystal assembly meets the Bragg condition of X-ray diffraction in X-Y plane to diffract/reflect and monochromatize the X-ray generated in said target and extract characteristic X-rays only, and the electron-beam-irradiation position on the target, a center of the monochromator crystal assembly, and the sample are arranged on the Rowland circle to minimize focusing aberration to the sample, wherein electron-beam-irradiation position on said target and the center of the sample are located on each of two focuses of an ellipse coming in contact with said Rowland circle in the center of the monochromator crystal assembly, said monochromator crystal assembly has a toroidal surface in Z axial direction acquired by rotating said ellipse coming in contact with said Rowland circle around a straight line connecting the electron-beam-irradiation position on said target and the center of the sample; anda vacuum vessel for installing the electron gun, target, and monochromator crystal assembly;wherein the monochromator crystal assembly used for monochromatization with diffraction and reflection of said X-ray source is located on the Rowland circle together with said target and said sample to meet the condition that the dispersed X-ray beam concentrates on the surface of the sample with the minimum aberration;wherein said Rowland circle is ...

LASER DESORPTION, ABLATION, AND IONIZATION SYSTEM FOR MASS SPECTROMETRY ANALYSIS OF SAMPLES INCLUDING ORGANIC AND INORGANIC MATERIALS

Systems and methods for sample analysis include applying, using a first laser source, a first beam to a sample to desorb organic material from a location of the sample and ionizing the desorbed organic material using a second laser source to generate ionized organic material. The ionized organic material is then analyzed using a mass spectrometer. A second beam from the first laser is then applied to the sample to ablate inorganic material from the location of the sample. The ablated inorganic material is then ionized using the second laser source to generate ionized inorganic material. The mass spectrometer is then used to analyze the ionized inorganic material. During analysis, one or more images of the sample may also be captured and linked to the collected analysis data.

Strong permanent magnet device of magnetized material under vacuum system

A method of constructing the oil shale organic structure model method

Preparation method of powder sample of X-ray photoelectron spectrometer

The invention discloses a method for preparing a powder sample of an X-ray photoelectron spectrometer, which comprises the following steps of: S1, spraying alcohol on a glass table top, and flatly laying an aluminum foil or a copper foil on the glass table top; s2, spraying alcohol on the surface of the aluminum foil or the copper foil, and scraping by using a scraper; s3, a four-side film making device is taken, the coating thickness is selected, a sample is stirred through a magnetic stirring machine, the sample and the aluminum foil or the copper foil are added into the film making device together after stirring is completed, and the film making device moves in one direction; and S4, completing preparation of a film layer sample with a fixed thickness. Different from a conventional preparation mode, a sample with a smoother surface and a fixed thickness can be prepared, corresponding operation can be carried out according to different sample preparation, the preparation efficiency is ...

SYRINGE WITH PECVD LUBRICITY LAYER

Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier and lubricity coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system is also disclosed.

XPS metrology for process control in selective deposition

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

Charged particle detection for spectroscopic techniques

An X-ray photoelectron spectrometer comprises; a spectroscopic analyser; and apparatus for detection of charged particles (photoelectrons) from the analyser comprising charged particle optics 18 and a detector 16 comprising an array of pixels, wherein the optics 18 is configured to accelerate the photoelectrons from the analyser 114 towards the detector 16. The optics 18 may be electrostatic lenses. The spectroscopic analyser being one of an electrostatic hemispherical analyser, a cylindrical mirror analyser, a time-of-flight analyser, a parallel plate analyser, or a retarding field analyser. The spectrometer comprises an x-ray source 50, monochromator 56, retarding lens 60, and electrostatic hemispherical analyser 114. The charged particles (photoelectrons emitted from a sample 58) arriving at the detector 16 have a spread in the energy dispersive direction 12.

HOLLOW BODY HAVING A WALL OF GLASS WITH A SURFACE REGION HAVING CONTENTS OF SI AND N

TEMPERATURE-CONTROLLED SAMPLE INTRODUCTION SYSTEM FOR ANALYSIS OF VISCOUS SAMPLES

A sample introduction system is described that provides temperature-controlled handling and transfer of a sample from an autosampler, through a transfer line, to a heated environment proximate an analytical device. A system embodiment includes, but is not limited to, an autosampler including a temperature-controlled deck to support one or more sample containers; a heating unit including one or more heating elements to one or more fluids to be introduced to a sample removed from the one or more sample containers; a transfer line fluidically coupled with the autosampler and including a heating element configured to transfer heat to fluid flowing through the transfer line; and a sample handling system fluidically coupled with the transfer line and configured to fluidically couple with an analysis device, the sample handling system including a housing and a heating element configured to control a temperature of an environment defined by the housing.

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF). 1. A method for determining a property of a layer of an integrated circuit (IC) , the layer being formed over an underlayer , comprising the steps of:irradiating the IC to thereby generate emission from the IC;collecting the emission from the IC and determining the kinetic energy of emitted species within the emission to thereby calculate emission intensity of various species emitted from the layer and emission intensity of species emitted from the underlayer;calculating a ratio of the emission intensity of species emitted from the layer and emission intensity of species emitted from the underlayer;using the ratio to determine material composition or thickness of the layer.2. The method of claim 1 , wherein the steps of irradiating IC and collecting emission is performed using one of x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).3. The method of claim 1 , wherein the steps of irradiating IC comprises irradiating the IC with ultraviolet radiation.4. The method of claim 1 , wherein the steps of irradiating IC comprises irradiating the IC with monochromatic radiation.5. The method of claim 1 , wherein generate emission from the IC comprises ejecting ...

METHOD FOR DETERMINING PARAMETERS OF THREE DIMENSIONAL NANOSTRUCTURE AND APPARATUS APPLYING THE SAME

A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

METHOD FOR CHARACTERIZING ENERGY LEVEL OF CORE/SHELL NANOPARTICLE

In a method for determining an energy level of a core/shell according to an example, a valence band energy level of a shell and a core-level energy level of a core in a core/shell nanoparticle are measured together, and by using a valence band energy level and a core-level of a core nanoparticle including only a core, a reliable energy level in a core/shell structure may be determined.

COMPUTER-IMPLEMENTED METHOD FOR GENERATING EVENT-AVERAGED AND TIME-RESOLVED SPECTRA

Method for observing internal structure of silicon carbon powder

The invention provides a method for observing the internal structure of silicon carbon powder, which comprises the following steps: coating conductive silver adhesive on a carrier, uniformly spraying the silicon carbon powder on the conductive silver adhesive, and cutting the carrier to obtain a detection sample; putting the detection sample into an ion grinder for cutting to obtain a polished sample; and observing the polishing sample through a scanning electron microscope and/or an energy disperse spectroscopy. According to the method for observing the internal structure of the silicon carbon powder, conductive carbon glue is replaced with liquid conductive silver glue, interference of graphite particles doped in a pole piece and carbon elements in a conductive agent can be avoided, and the carbon element content and element distribution of the material can be accurately quantified. After a silicon carbon powder sample is sprayed on the conductive silver adhesive, the silicon carbon powder ...

SYSTEM AND METHOD FOR CHARACTERIZING A FILM BY X-RAY PHOTOELECTRON AND LOW-ENERGY X-RAY FLUORESCENCE SPECTROSCOPY

SPEKTROSKOPIE- UND BILDGEBUNGSSYSTEM

Einrichtung und Verfahren zur Charakterisierung einer Probe mittels Spektroskopie und/oder Bildgebung. Die Einrichtung umfasst einen ersten Detektor für Bildgebung oder Spektroskopie, einen zweiten Detektor für Bildgebung oder Spektroskopie und einen elektrostatischen Energieanalysator vom Ringkondensatortyp. Der elektrostatische Energieanalysator vom Ringkondensatortyp umfasst eine erste und eine zweite Eintrittsöffnung, die derart angeordnet sind, dass geladene Teilchen, die von einer Probe emittiert werden und die erste Eintrittsöffnung passieren, eine erste Flugbahn durch den elektrostatischen Energieanalysator vom Ringkondensatortyp durchlaufen, um auf den ersten Detektor einzufallen, und geladene Teilchen, die von einer Probe emittiert werden und die zweite Eintrittsöffnung passieren, eine zweite Flugbahn durch den elektrostatischen Energieanalysator vom Ringkondensatortyp durchlaufen, um auf den zweiten Detektor einzufallen. Eine Ablenkanordnung, die zwischen der Probe und dem Analysator ...

Sample holder capable of being used for XPS detection system and in-situ reaction system

METHOD FOR TESTING STABILITY OF X-RAY PHOTOELECTRON SPECTROMETER

Disclosed is a method for testing the stability of an X-ray photoelectron spectrometer. The method comprises: acquiring a first upper limit value and a first lower limit value of the proportion of the oxygen and nitrogen content corresponding to a calibration sheet having a surface on which a silicon oxynitride film is formed, wherein the proportion of the oxygen and nitrogen content refers to the ratio of the sum of the oxygen content and nitrogen content corresponding to the calibration sheet to the thickness of the silicon oxynitride film (S102); using an X-ray photoelectron spectrometer to measure the calibration sheet in order to acquire a first test value of the proportion of the oxygen and nitrogen content corresponding to the calibration sheet (S104); and by means of the first test value, the first upper limit value and the first lower limit value, determining whether the X-ray photoelectron spectrometer is stable (S106).

IN SITU AND TUNABLE DEPOSITION OF A FILM

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

Material growth test integration system

MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

The present invention addresses the problem of providing a mask blank that makes it possible to further miniaturize a mask pattern or a hard mask pattern and improving the pattern quality, and to resolve this problem, a mask blank (100) has a structure in which a thin film (3) for pattern formation and a hard mask film (4) are laminated in this order on a transparent substrate (1), wherein the hard mask film (4) is configured so that a narrow spectrum of Si2p obtained by analysis by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of 103 eV or more, a maximum peak of a narrow spectrum of N1s obtained by analysis by X-ray photoelectron spectroscopy is equal to or less than a detection lower limit value, and the content ratio (atomic%) of silicon and oxygen is less than Si:O = 1:2.

WAVEFORM ANALYSIS METHOD AND WAVEFORM ANALYSIS DEVICE

Provided is a waveform analysis device (4) for analyzing a target waveform that is a chromatogram or a spectroscopic spectrum, a waveform dividing unit (54) which divides the target waveform into a plurality of partial waveforms; a determination unit (55) which uses a learned model created by machine learning using a plurality of sets of a plurality of partial waveforms created by dividing a reference waveform for which the position of the peak portion is known and determines whether or not each of the plurality of partial waveforms of the target waveform is a peak portion; and a classification unit (56) which, on the basis of the determination result by the determination unit, classifies the target waveform into a peak region in which peak portions are continuous and a non-peak region other than the peak region.

System and method using x-rays for depth-resolving metrology and analysis

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.

SYSTEM AND PROCESS FOR IN-PROCESS ELECTRON BEAM PROFILE AND LOCATION ANALYSES

A High Energy Beam Processing (HEBP) system (1) provides feedback signal monitoring and feedback control for the improvement of process repeatability and three-dimensional (3D) printed part quality. Electrons deflected from a substrate (90) in the processing area (A) impinge on a surface of a sensor (70, 201). The electrons result from the deflection of an electron beam (15) from the substrate. Either one or both of an initial profile of an electron beam and an initial location of the electron beam relative to the substrate are determined based on a feedback electron signal corresponding to the impingement of the electrons on the surface of the sensor. With an appropriate profile and location of the electron beam, the build structure (52) is fabricated on the substrate.

3D printing part forming process surface hardness on-line monitoring device

METHOD FOR CLASSIFYING UNKNOWN PARTICLES ON A SURFACE OF A SEMICONDUCTOR WAFER

Verfahren zum Klassifizieren von unbekannten Partikeln auf einer Oberfläche einer Halbleiterscheibe umfassend das Aufbringen von Partikel bekannter chemischer Zusammensetzung unter-schiedlicher Größe auf einer Testscheibe, Bestimmen einer Größe mehrerer Partikel bekannter chemischer Zusammensetzung und Aufnehmen eines Spektrums einer energiedispersiven Röntgenspektroskopie mehrerer Partikel bekannter chemischer Zusammensetzung, gefolgt vom jeweiligen Bestimmen eines Stoffgehaltes daraus, und Anpassen einer Ausgleichskurve an Größe und Stoffgehalt der Partikel bekannter chemischer Zusammensetzung, ferner das Bestimmen einer Partikelgröße eines unbekannten Partikels und ein Aufnehmen eines Spektrums einer energiedispersive Röntgenspektroskopie des unbekannten Partikels und daraus ermitteln des Stoffgehaltes des unbekannten Partikels auf einer Halbleiterscheibe und Klassifizieren des unbekannten Partikels als Ergebnis des Vergleiches der Größe und des Stoffgehaltes des unbekannten Partikels ...

Handheld X-X ray spectrometer's detection platform device

Detection device based on energy dispersion X-ray diffraction

Synchronous illumination - ultraviolet electron energy spectrum analysis testing arrangement

VARIABLE REDUCTION RATIO SPHERICAL ABERRATION CORRECTION ELECTROSTATIC LENS, WIDE ANGLE ENERGY ANALYZER, AND TWO-DIMENSIONAL ELECTRON SPECTROMETER

Provided is a compact two-dimensional electron spectrometer that is capable of variably adjusting the reduction ratio across a wide range, and performing simultaneous measurements of the two-dimensional emission angle distribution measurement of high energy resolution across a wide solid angle of acquisition. The two-dimensional electron spectrometer is configured from: a variable reduction ratio spherical aberration correction electrostatic lens; a cylindrical mirror type energy analyzer or a wide angle energy analyzer; and a projection lens. The variable reduction ratio spherical aberration correction electrostatic lens is configured from: an electrostatic lens that consists of an axially symmetrical spherical mesh having a concave shape with respect to a point source, and one or a plurality of axially symmetrical electrodes, and that adjusts the spherical aberration of charged particles generated from the point source; and an axially symmetrical deceleration field generating electrode ...

X-RAY IRRADIATION DEVICE AND ANALYSIS DEVICE

METHOD FOR MANUFACTURING PARTICLE ANALYSIS DEVICE, AND PARTICLE ANALYSIS DEVICE

Provided is a method for manufacturing a particle analyzer in which the deterioration of the measurement function is suppressed during the measurement of the particles to be measured. The method of manufacturing a particle analyzer, the particle analyzer including a first storage chamber in which a first liquid is stored, a second storage chamber in which a second liquid containing particles to be analyzed is stored, and a flow path connecting the first storage chamber in fluid communication with the second storage chamber, which includes a surface modification step of irradiating a surface constituting the flow path with an ultraviolet ray to modify the surface of the flow path.

Inspection method

FLUORINE-CONTAINING ETHER COMPOUND AND ARTICLE

Provided are: an article on which dirt is not noticeable, and which has excellent dirt wiping-off properties; and a fluorine-containing ether compound. This article comprises: a base material; and a surface layer which is formed on a main surface of the base material and has a hydrophilic functional group and a poly(oxyfluoroalkylene) chain.

Feed-forward of multi-layer and multi-process information using XPS and XRF technologies

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

A METHOD FOR MANUFACTURING CHALCOGENIDE, AND ELECTRONIC DEVICE CONTANING THE SAME

METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS

Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

METHOD FOR CLASSIFYING UNKNOWN PARTICLES ON A SURFACE OF A SEMI-CONDUCTOR WAFER

The invention relates to a method for classifying unknown particles on a surface of a semi-conductor wafer, comprising: applying particles of a known chemical composition and varying size onto a test wafer; determining the size of a plurality of particles of a known chemical composition; recording a spectrum of an energy-dispersive X-ray spectroscopy of a plurality of particles of a known chemical composition; subsequently determining a substance content therefrom in each case; adapting a compensating curve to the size and substance content of the particles of a known chemical composition; furthermore determining the particle size of an unknown particle; recording a spectrum of an energy-dispersive X-ray spectroscopy of the unknown particle; determining therefrom the substance content of the unknown particle on a semi-conductor wafer; and classifying the unknown particle as a result of the comparison of the size and substance content of the unknown particle with the compensating curve.

Method and system for non-destructive metrology of thin layers

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

Feed-forward of multi-layer and multi-process information using XPS and XRF technologies

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Cerium-based metal organic framework for Cr (VI) detection, preparation method and application thereof

METHOD FOR EVALUATING CORE ELECTRON SPECTRA

The invention relates to methods for an ab initio evaluation of an core electron spectrum of a chemical sample, and in particular a spectrum generated by x-ray photoelectron spectroscopy (XPS, ESCA) by constructing a fit function on the basis of the phase spectra conceivable from elementary chemistry and approximating the fit function to the measured core electron spectrum for ascertaining the phases, with their concentration part, contained in the sample. Moreover, the invention relates to a computer program product that can be loaded directly into a memory unit and that comprises software portions by means of which the method according to the invention can be executed on an evaluation computer.

Optically stimulated electron emission measurement device and method for characterizing and comparing levels and species of surface contaminants

Systems, methods, instruments and devices of the various embodiments enable improved characterization and comparison of the level and species of surface contaminants from photo-induced emission analysis. The various embodiments may provide flexibility for calculating and analyzing the time-dependence of emission efficiencies. Irregular and heterogeneous surfaces, including regionally multiply-connected surface compositions, may be analyzed according to the various embodiments, and the various embodiments include techniques that support specific contaminant identification. Various embodiment focusing techniques may enhance assessment of spatially differential regional analysis of the substrate for more critical applications. The various embodiments may also include differential comparison with reference surfaces, either through differential comparison while scanning, or by comparison to digitally stored responses to known contaminants.

Systems and methods for combined reflectometry and photoelectron spectroscopy

Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

Copper-clad laminate, wiring board, and copper foil provided with resin

A copper-clad laminate includes an insulating layer and a copper foil in contact with at least one surface of the insulating layer, in which the insulating layer contains a cured product of a resin composition containing a modified polyphenylene ether compound of which a terminal is modified with a substituent having a carbon-carbon unsaturated double bond, a chromium element amount on an exposed surface on which the insulating layer is exposed by an etching treatment of the copper-clad laminate with a copper chloride solution, measured by X-ray photoelectron spectroscopy is 7.5 at % or less with respect to a total element amount measured by X-ray photoelectron spectroscopy, and a surface roughness of the exposed surface is 2.0 μm or less in terms of ten-point average roughness.

Solid-state battery in-situ observation device

The invention relates to a solid-state battery in-situ observation device, which comprises a pressure control device for applying pressure to a solid-state battery, an electrochemical device for carrying out an electrochemical test on the solid-state battery, a pressure display device for monitoring the pressure borne by the solid-state battery and an observation device for observing the state of the solid-state battery, and the pressure control device comprises a base; the first clamping piece is driven by the screw so that the first clamping piece can move on the base. The side, away from the first clamping piece, of the second clamping piece in the moving direction of the first clamping piece is connected with the base through a pressure sensor. The first clamping piece is matched with the second clamping piece to clamp the solid-state battery, the electrochemical testing device is respectively connected with a positive electrode and a negative electrode of the solid-state battery, the ...

COMPOSITE AND PNEUMATIC TIRE

The present invention provides a composite that has good initial adhesion and good adhesion after high temperature and high humidity aging. Provided is a composite including: a topping rubber composition having a fatty acid content of 0.8% by mass or less; and an adherend plated with a copper-containing layer. 1. A composite , comprising:a topping rubber composition having a fatty acid content of 0.8% by mass or less; andan adherend plated with a copper-containing layer,wherein the rubber composition comprises a natural rubber having a fatty acid content of 0.8% by mass or less.2. The composite according to claim 1 ,wherein rubber composition rubber component consists only of natural rubber.3. The composite according to claim 1 ,wherein not more than 0.8% by mass of fatty acids are attached to a surface of the adherend.4. A pneumatic tire claim 1 , comprising the composite according to . This application is a Divisional of co-pending U.S. application Ser. No. 15/933,006, filed on Mar. 22, 2018, which is based upon and claims the benefit of priority from Japanese Patent Application No. 2017-082833, filed on Apr. 19, 2017 and Japanese Patent Application No. 2017-109188, filed on Jun. 1, 2017. Each of the above applications is hereby expressly incorporated by reference, in its entirety, into the present application.The present invention relates to composites such as a rubber/cord composite, pneumatic tires, and an adhesion evaluation method.Conventional cord topping rubber compositions for carcasses or belts generally contain a rubber component including, for example, natural rubber, polyisoprene rubber, or styrene-butadiene rubber, a reinforcing filler such as carbon black, and other compounding ingredients.Since these topping rubber compositions need to adhere to cords, various techniques have been proposed. However, due to the increased demand for performance, further improvements are desired to ensure not only good initial adhesion but also good adhesion after ...

METHOD FOR CHARACTERISING AT LEAST ONE GAN/DIELECTRIC INTERFACE BY PHOTOELECTRON SPECTROSCOPY

Méthode de caractérisation d'une interface GaN/diélectrique comportant : - la réalisation d'un élément comportant une couche de GaN recouverte d'une couche d'un matériau diélectrique, - acquisition d'un spectre XPS de l'interface entre la couche de GaN et la couche de matériau diélectrique, ledit spectre comportant la raie Ga2p, - traitement de ladite raie Ga2p pour calculer le taux d'oxydation du gallium et déterminer la position en énergie de la raie Ga2p, - comparaison du couple taux d'oxydation / position en énergie du couple Ga2p avec d'autres couples taux d'oxydation / position en énergie du couple Ga2p pour d'autres éléments comportant une couche de GaN recouverte d'une couche d'un matériau diélectrique, la couche de GaN de chaque élément ayant subi au moins une étape de procédé de fabrication différente de celle des couches de GaN des autres éléments.

Method for analyzing source of atmospheric particulate matters based on stable elemental size distribution information

Performance evaluation method with x-ray and its usage

An aspect of the present invention relates to a method of evaluating performance of a film-forming material for forming a functional film on an eyeglass lens substrate or a functional film formed by the use of the film-forming material. The performance to be evaluated is selected from the group consisting of a sliding sensation of a surface of the functional film and an adhesion of the functional film, and the evaluation is conducted based on a change over time in a quantity of photoelectrons generated by irradiating with an X-ray the film-forming material or the functional film.

MICROWAVE PROBE FOR FURNACE REFRACTORY MATERIAL

Disclosed is a system and method to aid in these inspections that avoid the disadvantages of the prior art. The system and method are operative to take thickness measurements of, and thus evaluate the condition of, materials including but not limited to refractory materials, operating in frequency bands that result in less loss than previously known technologies, and utilizing a system configuration and signal processing techniques that isolate the reflected signal of interest from other spurious antenna reflections, particularly by creating (through the configuration of the antenna assembly) a time delay between such spurious reflections and the actual reflected signal of interest, thus enabling better isolation of the signal of interest. Still further, the antenna assembly is intrinsically matched to the material to be probed, such as by impedance matching the antenna to the particular material (through knowledge of the dielectric and magnetic properties of the material to be evaluated) to even further suppress spurious reflections. 1. A method for evaluating the condition of a remote surface of a material , comprising the steps of:providing a wide band coherent radar antenna that is selected based upon an impedance match with the material to be evaluated, wherein said antenna is provided a physical configuration adapted to delay receipt of a signal of interest reflected from said remote surface of said material by a time period sufficient to distinguish between said reflected signal of interest and reflected spurious signals from a near surface of said material;placing said antenna adjacent said near surface of said material;irradiating said material with coherent microwave radiation tuned over a frequency range;detecting reflected microwave radiation from said remote surface of said material; anddetermining the thickness of the material based upon a determined distance traveled by said signal of interest.2. The method of claim 1 , wherein said distance traveled ...

VESSEL INSPECTION APPARATUS AND METHODS

Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier, lubricity and hydrophobic coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system and vessel inspection apparatus and methods are also disclosed 1. A method for inspecting the product of a coating process wherein a coating has been applied by plasma enhanced chemical vapor deposition (PECVD to at least a portion of the surface of a vessel to form a coated surface , the method comprising:(a) providing a product of the coating process having a plasma enhanced chemical vapor deposition coating on the surface;(b) providing a space that is a lumen of the vessel adjacent to the plasma enhanced chemical vapor deposition coating;(c) measuring a release characteristic of at least one volatile species into the space adjacent to the plasma enhanced chemical vapor deposition coating;(d) identifying the release characteristic of the at least one volatile species from an acceptably coated surface of the inspection object; and(e) determining whether the release characteristic measured in step (c) satisfies the release characteristic identified in step (d).2. The invention of claim 1 , in which the vessel comprises thermoplastic base material.3. The invention of claim 2 , in which the vessel is an injection-molded thermoplastic part.4. The invention of claim 2 , in which the vessel is a blow molded thermoplastic part.5. The invention of claim 2 , in which the thermoplastic base material comprises a polyester.6. The invention of claim 2 , in which the thermoplastic base material ...

Method and system for non-destructive distribution profiling of an element in a film

A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

METHODS FOR MEASURING A THICKNESS OF AN OBJECT

A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation. 1. A method for analyzing an object , the method comprising:measuring a first X-ray reflectivity from a substrate before formation of the object;forming the object on the substrate;measuring a second X-ray reflectivity from the substrate after the formation of the object;calculating a variation between the first and second X-ray reflectivities;transforming the calculated variation using a fast-Fourier transform; anddetermining a thickness of the object based on the transformed calculated variation.2. The method as claimed in claim 1 , further comprising:irradiating an X-ray for measuring each of the first and second X-ray reflectivities at an angle of about 5 degrees or less with respect to a surface of the substrate.3. The method as claimed in claim 1 , wherein:measuring the first X-ray reflectivity includes measuring a first X-ray reflectivity spectrum; andmeasuring the second X-ray reflectivity includes measuring a second X-ray reflectivity spectrum.4. The method as claimed in claim 3 , further comprising:generating a delta-spectrum between the first and second X-ray reflectivity spectrums.5. The method as claimed in claim 3 , wherein calculating the variation includes subtracting a raw first X-ray reflectivity spectrum from a raw second X-ray reflectivity spectrum.6. The method as claimed in claim 1 , wherein the object is a layer or a pattern.7. The method as claimed in claim 6 , wherein the layer or pattern is included in a semiconductor device.8. The method as claimed in claim 1 , further comprising:numerically expressing a full width at half maximum ( ...

HARD X-RAY PHOTOELECTRON SPECTROSCOPY SYSTEM

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray tube, an X-ray monochromator, and a sample. The X-ray tube provides a beam of photons, which via the X-ray monochromator is directed through the system so as to excite electrons from the illuminated sample. The X-ray tube is connected to a monochromator vacuum chamber in which the X-ray monochromator is configured to monochromatize and focus the beam onto the sample. The monochromator vacuum chamber is connected to an analysis vacuum chamber, the illuminated sample being mounted inside the analysis vacuum chamber and the analysis vacuum chamber being connected to an electron energy analyser. The electron energy analyser is mounted onto the analysis vacuum chamber.

XPS METROLOGY FOR PROCESS CONTROL IN SELECTIVE DEPOSITION

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process. 1obtaining a reference integrated intensity of the first species from an XPS measurement of a reference wafer having the first layer;obtaining a reference integrated intensity of the second species from an XPS measurement of the second layer deposited on the first layer of the reference wafer;generating a reference value by taking the ratio of the reference integrated intensity of the second species and the reference integrated intensity of the first species;taking an XPS measurement of a sample wafer having the first layer and generating sample integrated intensity of the first species;taking an XPS measurement of the sample wafer after the second layer has been deposited over the first layer, and generating sample integrated intensity of the second species;generating a sample value by taking a ratio of the sample integrated intensity of the second species and the sample integrated intensity of the first species;generating a quality of process value by taking the ratio of the sample value and the reference value.. A method for monitoring quality of process forming a second layer having a second species over a first layer having first species using X-ray photoelectron spectroscopy (XPS) measurements, comprising: This application is a continuation of U.S. application Ser. No. 16/351,153, filed Mar. 12, 2019, which claims the benefit of U.S. Provisional Application No. 62/641,430, filed Mar. 12, 2018, which are hereby incorporated by reference in its ...

Pattern Measurement Method and Measurement Apparatus

A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern. 1. A pattern measurement method of measuring a dimension of a pattern formed on a sample based on a detection signal acquired based on irradiation of a charged particle beam , the method comprising:measuring distances between a reference pattern formed on the sample and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions; andclassifying the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.2. The pattern measurement method according to claim 1 ,wherein the classification of the measurement results is divided into a classification in which the distance between the reference pattern and the adjacent pattern is a first distance and a ...

FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. A method of thin film characterization , the method comprising:measuring first XPS and/or XRF intensity signals for a sample having a first layer above a substrate, the first XPS and/or XRF intensity signals including information for the first layer and for the substrate;determining a thickness of the first layer based on the first XPS and/or XRF intensity signals;combining the information for the first layer and for the substrate to estimate an effective substrate;measuring second XPS and/or XRF intensity signals for a sample having a second layer above the first layer above the substrate, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the substrate; anddetermining a thickness of the second layer based on the second XPS and/or XRF intensity signals, the thickness accounting for the effective substrate.2. The method of claim 1 ...

METHOD AND APPARATUS FOR MEASURING THIN FILM THICKNESS USING X-RAY

Provided is an apparatus and method for measuring for measuring a thickness of thin film using x-ray where a thickness of a thin film of nanometer(nm)-level can be accurately measured without destructing an target sample, through determination of thickness of thin film of the target sample, by determining a calibration curve by comparing a difference of intensities of signals scattered by a special component included in a base layer of the reference sample having a base layer and a base layer formed with the thin film layer with a thickness of the thin film layer, and determining the thickness of thin film layer of the target sample by comparing a difference of intensities of signals scattered by the special component included in the base layer of the target sample having the base layer formed with the thin film layer with the reference sample having the base layer with the calibration curve. 1. A method for measuring thickness of thin film using x-ray , the method comprising:detecting an intensity of a signal scattered by a special component included in a base layer by irradiating x-ray to the base layer of a reference sample;detecting an intensity of a signal scattered by the special component included in the base layer by irradiating x-ray to a thin film layer formed on the base layer of the reference sample;determining a calibration curve by comparing a difference between intensities of signals respectively detected from the base layer irradiation step and the thin film layer irradiation step with a thickness of the thin film layer;detecting an intensity of a signal scattered by the special component included in a base layer by irradiating x-ray to a thin film layer formed on the base layer of a target sample; anddetermining the thickness of thin film layer of the target sample by comparing the difference between intensities of signals respectively detected from the base layer irradiation step and the target sample irradiation step with the calibration curve.2. ...

Spectroscopy and imaging system

An apparatus and method for characterisation of a sample via spectroscopy and/or imaging. The apparatus comprises a first detector for imaging or spectroscopy, a second detector for imaging or spectroscopy, and a toroidal capacitor type electrostatic energy analyser. The toroidal capacitor type electrostatic energy analyser comprises a first and a second entrance aperture arranged such that charged particles emitted from a sample and passing through the first entrance aperture traverse a first trajectory through the toroidal capacitor type electrostatic energy analyser to be incident at the first detector, and charged particles emitted from a sample and passing through the second entrance aperture traverse a second trajectory through the toroidal capacitor type electrostatic energy analyser to be incident at the second detector. A deflection assembly arranged between the sample and the analyser may be used to direct charged particles emitted from the sample towards the first and/or second entrance aperture of the analyser.

MEASUREMENT SYSTEM AND METHOD FOR MEASURING IN THIN FILMS

A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites. 1. A measurement method for in-line measurements of one or more parameters of thin films in structures progressing on a production line , the method comprising:providing first measured data and second measured data from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites;processing the first measured data and determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set; andutilizing said at least one parameter value for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.2. The method of claim 1 , wherein the ...

METHODS AND SYSTEMS FOR THICKNESS MEASUREMENT OF MULTI-LAYER STRUCTURES

A system and method for measuring thicknesses of layers of a multi-layered structure. The method includes generating a terahertz wave pulse, transmitting the terahertz wave pulse to a multi-layered structure having multiple layers of materials, receiving reflected terahertz wave pulses reflected by boundaries between the multiple layers as the terahertz wave pulse penetrates the structure, and processing the reflected terahertz wave pulses to: (i) determine whether the reflected terahertz wave pulses have a pulse width overlap; (ii) in response to determining that a pulse width overlap exists, generate modified reflected terahertz wave pulses; measure the time delays associated with each of the modified reflected terahertz pulses and (ii) determine a thickness of each of the multiple layers of materials based upon the time delay and a material refractive index of each of the materials. 1. A method for measuring thicknesses of layers of a multi-layered structure , the method comprising:generating a terahertz wave pulse;transmitting the terahertz wave pulse to the multi-layered structure having multiple layers of materials;receiving reflected terahertz wave pulses reflected by boundaries between the multiple layers as the terahertz wave pulse penetrates the multi-layered structure; and (i) determine whether the reflected terahertz wave pulses have a pulse width overlap;', '(ii) in response to determining that a pulse width overlap exists, generate modified reflected terahertz wave pulses;', '(iii) measure time delays associated with each of the modified reflected terahertz pulses; and', '(iv) determine a thickness of each of the multiple layers of materials based upon the time delays and a material refractive index of each of the materials., 'processing the reflected terahertz wave pulses to2. The method of claim 1 , wherein processing the reflected terahertz wave pulses to generate modified reflected terahertz wave pulses comprises:determining an amplitude and time ...

Method and Device for Measuring Energy of Electrons Excited by Sunlight

A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible. 17-. (canceled)8. A method for measuring energy and wavenumber of electrons excited by solar ray , the method comprising:forming a surface layer having a negative electron affinity on a surface of a semiconductor material;placing the semiconductor material in a vacuum environment and exposing the same to solar ray;accelerating photoelectrons discharged from the surface layer toward an energy analyzer; anddispersing the photoelectrons incident into the energy analyzer based on energy and emission angle of the photoelectrons.9. The method according to claim 8 , further comprising:adjusting a voltage used for acceleration to adjust an angular resolution. .10. The method according to claim 8 , wherein;the semiconductor material is exposed at a specific wavelength in solar ray.11. A method for measuring temporal change of energy of electrons excited by solar ray claim 8 , the method comprising:forming a surface layer having a negative electron affinity on a surface of a semiconductor material;placing the semiconductor material in a vacuum environment and exposing the same to solar ray;accelerating photoelectrons discharged from the surface layer toward an energy analyzer;dispersing the photoelectrons incident into the energy analyzer based on energy of the photoelectrons repeatedly, ...

Cycloolefin polymer container with a scratch resistant and anti-static coating

Cycloolefin polymer (COP) containers, including vials or syringes, having a scratch-resistant and anti-static coating on the external wall results in a reduction or prevention of static charge on the articles. The combination of an anti-scratch and anti-static coating results in the reduction of the attraction of charged particles to the container, leading to decreased particulate contamination while providing scratch resistance.

METHOD AND APPARATUS FOR SENSING BOUNDARY BETWEEN MATERIALS

A method and apparatus for sensing boundaries between materials are provided. The method for sensing boundaries between materials comprises the steps of: fixing sensing modules in place; transmitting and receiving radio frequency signals; and analyzing radio frequency signals. The method enables real-time detection of positions of the boundaries between materials and handling and monitoring of changes in the boundary positions. The apparatus for sensing boundaries between materials comprises at least two sensing modules, or a radio frequency transmitting unit and a plurality of radio frequency signals receiving unit, or a plurality of radio frequency transmitting unit and a radio frequency signals receiving unit. The radio frequency signals are transmitted, received and analyzed by the radio frequency transmitting unit and the radio frequency signals receiving unit to determine the boundary positions and changes therein. 1. A method for sensing boundaries between materials , comprising the steps of:applying sensing modules, including fixing at least two said sensing modules vertically to at least one material, at least a said sensing module being disposed in the said material, the sensing modules each comprising a radio frequency signals transmitting unit and a radio frequency signals receiving unit, wherein the radio frequency signals transmitting unit and the radio frequency signals receiving unit are located at different positions in the material and correspond horizontally to each other;transmitting and receiving radio frequency signals, including transmitting the radio frequency signals from each of the radio frequency signals transmitting units and receiving the radio frequency signals by a corresponding one of the radio frequency signals receiving units; andanalyzing radio frequency signals, including analyzing amplitude or phase of the radio frequency signals received by each of the radio frequency signals receiving units, and sensing or monitoring a ...

Film-forming and analysis composite apparatus, method for controlling film-forming and analysis composite apparatus, and vacuum chamber

A vacuum chamber is provided with a film-forming apparatus which film-forms an oxide semiconductor thin film by sputtering, an analysis apparatus which performs spectroscopic analysis with respect to a surface of the film-formed oxide semiconductor thin film, and a valve which splits an inner space of the vacuum chamber into a first space where the analysis apparatus is arranged and a second space where the film-forming apparatus is arranged and permits communication between the split first space and second space.

APPARATUS FOR MEASURING SAMPLE THICKNESS AND METHOD FOR MEASURING SAMPLE THICKNESS

An apparatus for measuring thickness includes: a chamber; a sound wave transmitter transmitting a sound wave in the chamber; a sound wave receiver receiving the sound wave transmitted from the sound wave transmitter in the chamber; and a supporter between the sound wave transmitter and the sound wave receiver. 1. An apparatus for measuring thickness comprising:a chamber;a sound wave transmitter transmitting a sound wave in the chamber;a sound wave receiver receiving the sound wave transmitted from the sound wave transmitter in the chamber; anda supporter between the sound wave transmitter and the sound wave receiver.2. The apparatus for measuring thickness of claim 1 , further comprising a thermometer in the chamber.3. The apparatus for measuring thickness of claim 1 , further comprising a cooler for cooling the chamber.4. The apparatus for measuring thickness of claim 1 , wherein an inner wall of the chamber comprises a sound absorbing material.5. The apparatus for measuring thickness of claim 1 , further comprising a controller claim 1 , controls synchronization of the sound wave transmitter and the sound wave receiver, and', 'controls the cooler according to a temperature signal received from the thermometer., 'wherein the controller is connected to the sound wave transmitter, the sound wave receiver, the thermometer, and the cooler,'}6. The apparatus for measuring thickness of claim 1 , wherein the sound wave transmitter is spaced apart from the sound wave receiver by a predetermined distance.7. The apparatus for measuring thickness of claim 1 , wherein the sound wave transmitter transmits a sound wave having an audible frequency claim 1 , andthe sound wave receiver receives the sound wave having an audible frequency.8. The apparatus for measuring thickness of claim 1 , wherein the supporter is spaced apart from the sound wave receiver by a predetermined distance.9. The apparatus for measuring thickness of claim 1 , wherein the supporter has a hole located ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure. 1. A monitoring system for determining at least one property of an integrated circuit (IC), the system comprising a computer system comprising data input and output utilities, a memory utility, and a data processor and analyzer utility. This application is a continuation-in-part of PCT Application No. PCT/US2016/060147, filed Nov. 2, 2016, which claims priority benefit from U.S. Provisional Application No. 62/249,845, filed on Nov. 2, 2015, the disclosures of each of which being hereby incorporated herein by reference in their entirety.The invention generally ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE DISTRIBUTION PROFILING OF AN ELEMENT IN A FILM

A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra. 1. A method comprising:obtaining a intensity spectrum for an element in a sample film using a photoelectron spectroscopy system and using a constant emission angle;determining a centroid value for said element in said sample film using said intensity spectrum, wherein said method is non-destructive to said sample film;correlating said centroid value to one or more electrical parameters for said sample film; and performing at least one ofmonitoring one or more fabrication process for said sample film, controlling one or more electrical parameters for said sample film, engineering one or more fabrication process for said sample film, predicting one or more fabrication process for said sample film, and determining and correcting a dose for said element based on said determined centroid value.2. A method comprising:computing a set of statistical coefficients characteristic of a set of spectra, said set of statistical coefficients organized in a database as a function of selected parameters that define a reference film;simulating a background spectrum for a sample film using said database and a known parameter for said sample film; andsubtracting said background spectrum from a measured spectrum for said sample film to generate a processed spectrum for said sample film ...

SYSTEM AND METHOD USING X-RAYS FOR DEPTH-RESOLVING METROLOGY AND ANALYSIS

A system and method for analyzing a three-dimensional structure of a sample includes generating a first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than an absorption edge energy of a first atomic element of interest, and that is collimated to have a collimation angular range less than 7 mrad in at least one direction perpendicular to a propagation direction of the first x-ray beam; irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; and simultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample. 1. A method for analyzing a three-dimensional structure of a sample , the method comprising:generating a first x-ray beam, the first x-ray beam having a first energy bandwidth less than 20 eV at full-width-at-half maximum and a first mean x-ray energy that is in a range of 1 eV to 1 keV higher than a first absorption edge energy of a first atomic element of interest, the first x-ray beam collimated to have a first collimation angular range less than 7 mrad in at least one direction perpendicular to a first propagation direction of the first x-ray beam;irradiating the sample with the first x-ray beam at a plurality of incidence angles relative to a substantially flat surface of the sample, the incidence angles of the plurality of incidence angles in a range of 3 mrad to 400 mrad; andsimultaneously detecting a reflected portion of the first x-ray beam from the sample and detecting x-ray fluorescence x-rays and/or photoelectrons from the sample.2. The method of claim 1 , wherein the first absorption edge energy of the first atomic element of interest is in a range of 0.1 keV to 5.4 ...

FILM THICKNESS MEASURING DEVICE AND FILM THICKNESS MEASURING METHOD

A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave. 1. A film thickness measuring device comprising:a terahertz wave generator that generates a terahertz wave;a prism that has an entrance surface through which the terahertz wave emitted from the terahertz wave generator is caused to enter, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface from which a reflected wave from the sample is emitted;a terahertz wave detector that detects an S-polarization component and a P-polarization component of the reflected wave emitted from the emission surface of the prism; anda control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.2. The film thickness measuring device according to claim 1 , wherein the sample further includes a second film that is formed on the first film and contains one of a conductive particle and a pore.3. The film thickness measuring device according to claim 2 , wherein:the control section is configured to determine a thickness of the second film, based on a peak in a time waveform obtained by ...

METHOD AND APPARATUS FOR NONDESTRUCTIVE MEASURING OF A COATNG THICKNESS ON A CURVED SURFACE

An improved method and apparatus for non-destructive measurements of coating thicknesses on a curved surface by measuring components of the microwave energy reflected from the surface. Preferred embodiments of the present invention provide a portable microwave thickness detector with a rounded rocker-type base allowing the microwave beam to be moved through a range of angles with respect to the target surface. An optical alignment system determines when the microwave angle of incidence is at a desired angle when the components of the reflected microwave energy are measured. Preferred embodiments of the present invention also provide a portable microwave thickness detector which maintains a constant standoff distance between the between the microwave detector and the sample to be measured. 1. An apparatus for nondestructive measurement of a property of a target , the target including a substrate and a coating on the substrate , and the property being the thickness of the coating , the apparatus comprising:a housing containing a first sensor including a microwave transmitter for producing a primary beam of microwave energy, a waveguide for directing said primary beam of microwave energy towards the target, and a detector for receiving microwave energy reflected from said target;an alignment system for producing a signal when the orientation between the beam of microwave energy and the target surface is at a predetermined angle; andan analyzer for determining the thickness of the coating on the substrate by measuring components of the reflected microwave energy when the orientation between the beam of microwave energy and the target surface is at the predetermined angle.2. The apparatus of in which the alignment system comprises:an illumination source for directing illumination towards the target surface; andan optical detector for detecting illumination reflected from the target surface when the orientation between the beam of microwave energy and the target surface ...

System And Method For Graphene-Structure Detection Downhole

A method may comprise sampling a wellbore fluid; analyzing the wellbore fluid and determining a presence of a graphene-like substrate, a concentration of the graphene-like substrate, or both, in the wellbore fluid; and correlating the presence and the concentration of the graphene-like substrate to at least one subterranean formation characteristic. 1. A method comprising:sampling a wellbore fluid;analyzing the wellbore fluid and determining a presence of a graphene-like substrate, a concentration of the graphene-like substrate, or both, in the wellbore fluid; andcorrelating the presence and the concentration of the graphene-like substrate to at least one subterranean formation characteristic.2. The method of claim 1 , wherein sampling the wellbore fluid comprises sampling in a wellbore using a wellbore sampling tool.3. The method of claim 1 , wherein sampling the wellbore fluid comprises sampling at a surface of the wellbore by pumping the wellbore fluid out of the wellbore.4. The method of claim 1 , wherein determining a presence of the graphene-like substrate comprises detecting a characteristic signal of graphene-like substrates.5. The method of claim 4 , wherein the characteristic signal is a spectrographic peak.6. The method of claim 5 , wherein the spectrographic peak is at least about 2700 cmfor a Raman shift.7. The method of claim 5 , wherein the spectrographic peak is at least about 284 eV binding energy for X-ray photoelectron spectroscopy.8. The method of claim 1 , wherein the at least one subterranean formation characteristic comprises at least one of reservoir architecture claim 1 , interval productivity claim 1 , reservoir charging mechanisms claim 1 , reservoir filling history claim 1 , reservoir migration pathways claim 1 , or combinations thereof9. The method of claim 8 , wherein the reservoir architecture comprises at least one of trap configuration claim 8 , seal capacity claim 8 , a base of a producing zone claim 8 , or combinations thereof.10. ...

Information Processing Device and Information Processing Method

An information processing device includes a storage section that stores a history relating to the acquisition of measurement data, a history relating to an analysis position within an analyzer, and a history relating to a predetermined operation performed on a specimen using the analyzer as log information linked to time information, and a display control section that performs a control process that displays these histories within a log display area on a display screen in time series based on the log information, the display control section performing a control process that displays a measurement result image generated based on the measurement data on the display screen, and, when an operation input that selects one measurement result image, performing a control process that displays a history that corresponds to the measurement data used to generate the selected measurement result image. 1. An information processing device that processes measurement data acquired by an analyzer , the information processing device comprising:a storage section that stores a history relating to acquisition of the measurement data, a history relating to an analysis position within the analyzer, and a history relating to a predetermined operation performed on a specimen using the analyzer as log information linked to time information; anda processing section comprising a computer, said processing section having a display control section programmed to perform a control process that displays the history relating to the acquisition of the measurement data, the history relating to the analysis position, and the history relating to the predetermined operation within a log display area on a display screen in time series based on the log information,the display control section programmed to perform a control process that displays a measurement result image generated based on the measurement data on the display screen, and, when an operation input that selects one measurement result image among ...

SYSTEM AND METHOD FOR DEPTH-SELECTABLE X-RAY ANALYSIS

A system for x-ray analysis includes at least one x-ray source configured to emit x-rays. The at least one x-ray source includes at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source includes Si x-ray emission line x-rays. The system further includes at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays. 1. A system for x-ray analysis , the system comprising:at least one x-ray source configured to emit x-rays, the at least one x-ray source comprising at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source, at least some of the x-rays emitted from the at least one x-ray source comprising Si x-ray emission line x-rays; andat least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.2. The system of claim 1 , wherein the Si x-ray emission line x-rays comprise Si Kαx-ray emission line x-rays.3. The system of claim 1 , wherein the at least one x-ray source further comprises at least one second sub-source on or embedded in the at least one thermally conductive substrate claim 1 , the at least one second sub-source configured to generate x-rays in response to electron bombardment of the at least one second sub-source claim 1 , the at least one second sub-source comprising at least one material different from silicon carbide claim 1 , at least some of the x-rays emitted from the at least one x-ray source comprising x-ray emission line x-rays of the at ...

METHOD OF ELECTROCHEMICALLY MODIFYING SURFACE OF ELECTRODE USING DOPAMINE-HYALURONIC ACID CONJUGATES

Provided are a method of electrically modifying an electrode surface with dopamine-hyaluronic acid conjugates and technologies to suppress adsorption of harmful biomaterials and organisms by imparting anti-fouling to the electrode surface using the same and to maintain electrical properties of the electrode. More specifically, provided is a technology of coating an electrode surface via a dopamine functional group by electrochemically oxidizing dopamine-conjugated biocompatible polysaccharide polymers around the electrode. This aims to confirm the capability of suppressing organism adhesion depending on whether or not cells are adsorbed after coating the electrode surface, and to identify that electrochemical performance of the electrode is maintained or a slight increase in electrode resistance is kept, even after the electrode coating. The surface modified electrode according to the present invention can be widely used in the field of biomaterials such as bio-electrodes, bio-sensors and cell supports. 2. The method according to claim 1 , wherein the surface modification method is carried out by immersing a reference electrode and a counter electrode in a solution to form a three electrode cell and conducting a potentiostatic method.3. The method according to claim 2 , wherein the electrode is an ITO electrode or a gold electrode claim 2 ,the reference electrode is a silver/silver chloride saturated calomel electrode (SCE), andthe counter electrode is a Pt electrode.4. The method according to claim 3 , wherein the solution has a concentration of the dopamine-hyaluronic acid conjugates of 1 to 10 mg/mL and a pH of 2 to 7.5. The method according to claim 4 , wherein the current is applied at a constant potential within a range of 0.6 to 1.6 V for 100 to 600 seconds. This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2016-0133487 filed on Oct. 14, 2016 in the Korean Intellectual Property Office, the disclosure of which is ...

X-RAY SOURCE

An X-ray source comprising: 1. An X-ray source comprising: an electron gun and a target mounted in the housing, the electron gun being arranged to direct electrons to a point on the target such that the target radiates X-rays; and', 'a monochromator arranged to focus X-rays radiated from the target to a focal point on a sample in the chamber;, 'an elongate tubular housing adapted to be fitted into a port of and extend into a chamber containing a sample to be analysed, said housing containingwherein the tubular housing has an inner diameter (D) and a central axis along its length, and wherein the monochromator is positioned, and comprises a material selected such that the focal point of the X-rays on the sample lies at a radial distance from the central axis not greater than the radius (D/2) of the housing, and wherein the point on the target is also at a radial distance from the central axis not greater than the radius of the housing, such that the target, the monochromator and the focal point on the sample are all contained within a radial area not greater than the diameter of the housing.2. The X-ray source of claim 1 , wherein the tubular housing is adapted to be fitted to claim 1 , and extend through claim 1 , a port of the chamber.3. The X-ray source of claim 2 , wherein the tubular housing is adapted to be fitted to the port by means of a flange provided around the port.4. The X-ray source of any preceding claim claim 2 , wherein the tubular housing has a central axis along its length claim 2 , and wherein the point on the target is positioned on the central axis claim 2 , and wherein the monochromator is positioned and comprises a material selected such that the focal point of the X-rays on the sample also lies on the central axis.5. The X-ray source of any preceding claim claim 2 , wherein the tubular housing has an outside diameter of less than 35 mm.6. The X-ray source of any preceding claim claim 2 , wherein the target is a planar target arranged with a ...

Hard x-ray photoelectron spectroscopy arrangement and system

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray source providing a beam of photons which is directed through the system so as to excite electrons from an illuminated sample. An X-ray tube is connected to a monochromator vacuum chamber in which a crystal is configured to monochromatize and focus the beam onto an illuminated sample. A hemispherical electron energy analyser is mounted onto the analysis chamber. An air gap is provided between the X-ray tube and the monochromator chamber, which air gap is provided with a first radiation trap to shield the ambient air from the radiation when the air gap is illuminated with X-rays from the source.

Method of Generating Elemental Map and Surface Analyzer

A method of generating an elemental map includes: acquiring a plurality of correction channel images by scanning a surface of a standard specimen having a uniform elemental concentration with a primary beam and generating a correction channel image for each channel; generating correction information for each pixel of each correction channel image among the plurality of correction channel images based on a brightness value of the pixel; acquiring a plurality of analysis channel images by scanning a surface of a specimen to be analyzed with the primary beam and generating an analysis channel image for each channel; correcting brightness values of pixels constituting an analysis channel image among the plurality of analysis channel images based on the correction information; and generating an elemental map of the specimen to be analyzed based on the plurality of analysis channel images having pixels with corrected brightness values.

X-ray based metrology of a high aspect ratio hole

A method that includes performing multiple test iterations to provide multiple test results; and processing the multiple test results to provide estimates of a conductivity of each of the multiple bottoms segments. The multiple test iterations includes repeating, for each bottom segment of the multiple bottom segments, the steps of: (a) illuminating the bottom segment by a charging electron beam; wherein electrons emitted from the bottom segment due to the illuminating are prevented from exiting the hole; (b) irradiating, by a probing electron beam, an area of an upper surface of the dielectric medium; (c) collecting electrons emitted from the area of the upper surface as a result of the irradiation of the area by the probing electron beam to provide collected electrons; and (d) determining an energy of at least one of the collected electrons to provide a test result.

METHOD AND DEVICE FOR MEASURING A LAYER THICKNESS OF AN OBJECT

A method and device for measuring the layer thickness of an object. Initially, an object with a layer thickness is provided. Thereupon, at least two measurement steps are performed, where electromagnetic radiation with frequencies in a frequency band associated with the respective measurement step is radiated on the object in each case. The frequency bands are different portions of one bandwidth. Secondary radiation emanating from the boundary surfaces of the object is detected and a measurement signal associated with the measurement step is ascertained. The measurement signals are combined according to the respective frequency bands associated with the measurement steps in order to form an evaluation signal; a fundamental frequency is determined therefrom, and the layer thickness is calculated. A large bandwidth can be realized by a narrow-bandwidth measurement steps by the method. As a result, physical limits of known methods are overcome, and the measurement accuracy is increased. 1. A method for measuring a layer thickness of an object , the method comprising the following steps:providing an object having two boundary surfaces spaced apart by a layer thickness;performing at least two measurement steps, wherein, in each case, electromagnetic radiation with frequencies in a frequency band associated with a respective measurement step is radiated on the object, wherein the frequency bands of the individual measurement steps are different portions of a bandwidth, and secondary radiation emanating from the two boundary surfaces of the object is detected and a measurement signal is ascertained;combining measurement signals of the at least two measurement steps according to the respective frequency bands in order to form an evaluation signal; anddetermining a fundamental frequency of the evaluation signal in order to calculate the layer thickness.2. The method as claimed in claim 1 , wherein the electromagnetic radiation is radiated on the object in pulsed fashion in ...

SYRINGE WITH PECVD LUBRICITY LAYER, APPARATUS AND METHOD FOR TRANSPORTING A VESSELTO AND FROM A PECVD PROCESSING STATION, AND DOUBLE WALL PLASTIC VESSEL

Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier and lubricity coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system is also disclosed. 2. The syringe of claim 1 , in which the surface treatment is less than 100 nm deep in the lubricating layer.3. The syringe of claim 1 , in which the surface treatment is less than 50 nm deep in the lubricity layer.4. The syringe of claim 1 , in which the surface treatment is less than 40 nm deep in the lubricity layer.5. The syringe of claim 1 , in which the surface treatment is less than 30 nm deep in the lubricity layer.6. The syringe of claim 1 , in which the surface treatment is less than 20 nm deep in the lubricity layer.7. The syringe of claim 1 , in which the surface treatment is less than 10 nm deep in the lubricity layer.8. The syringe of claim 1 , in which the surface treatment is less than 5 nm deep in the lubricity layer.9. The syringe of claim 1 , in which the surface treatment is less than 3 nm deep in the lubricity layer.10. The syringe of claim 1 , in which the surface treatment is less than 1 nm deep in the lubricity layer.11. The syringe of claim 1 , in which the surface treatment is between 0.1 and 50 nm deep in the lubricity layer12. The syringe of claim 1 , in which the surface treatment comprises SiO claim 1 , in which x is from about 1.5 to about 2.9.13. The syringe of claim 1 , in which the lubricity layer is on the barrel interior surface.14. The syringe of claim 1 , in which the lubricity layer is on the plunger.15. A method of PECVD treatment of a ...

Method for production and identification of weyl semimetal

Disclosed is a method for producing and identifying a Weyl semimetal. Identification is enabled via a combination of the vacuum ultraviolet (low-photon energy) and soft X-ray (SX) angle resolved photoemission spectroscopy (ARPES). Production generally requires providing high purity raw materials, creating a mixture, heating the mixture in a container at a temperature sufficient for thermal decomposition of an impurity while preventing the possible reaction between the side walls of the container and the raw materials, depositing the resulting compound and a transfer agent onto the bottom surface of the ampule, differentially heating the ampule, and allowing a chemical vapor transport reaction to complete.

DEVICE FOR MEASURING THICKNESS OF SPECIMEN AND METHOD FOR MEASURING THICKNESS OF SPECIMEN

A method for measuring the thickness of a specimen, according to an embodiment, can measure the thickness of a specimen having multiple layers in a contactless and non-destructive manner. In addition, when the refractive indexes of materials forming the respective layers are already known, the thicknesses of the respective layers can be integrally measured through differences in reflection times of terahertz waves with respect to the respective layers of the specimen, thereby measuring the thickness of the specimen, such that the time taken for measuring the thickness of the specimen can be reduced. Furthermore, when the refractive indexes of the materials forming the respective layers are not known, the refractive indexes of the respective layers can be measured through differences in transmission times and reflection times of terahertz waves with respect to the respective layers of the specimen, and at the same time, the thicknesses of the respective layers can be measured through differences in transmission times or reflection times of terahertz waves with respect to the respective layers of the specimen, so that the thickness of various specimens can be measured. As such, the present invention has a wide range of applications. 1. A specimen thickness measuring method , the method comprising:emitting, a first terahertz wave toward a first area of an upper portion of a first layer of a specimen including the first layer and a second layer, wherein a lower portion of the second layer of the specimen contacts at least part of the upper portion of the first layer, and the upper portion of the first layer includes the first area formed by removing at least part of the second layer;receiving a first reflected terahertz wave reflected by the specimen;emitting a second terahertz wave toward a second area of an upper portion of the second layer;receiving a second reflected terahertz wave reflected by the specimen;storing refractive indexes of the first layer and the ...

Feed-Forward of Multi-Layer and Multi-Process Information using XPS and XRF Technologies

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. A method of thin film characterization , the method comprising:measuring first XPS and/or XRF intensity signals for a sample having a first layer above a substrate, the first XPS and/or XRF intensity signals including information for the first layer and for the substrate;determining a thickness of the first layer based on the first XPS and/or XRF intensity signals;combining the information for the first layer and for the substrate to estimate an effective substrate;measuring second XPS and/or XRF intensity signals for a sample having a second layer above the first layer above the substrate, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the substrate; anddetermining a thickness of the second layer based on the second XPS and/or XRF intensity signals, the thickness accounting for the effective substrate.2. The method of claim 1 , wherein combining the information for the first layer and for the substrate to estimate the effective substrate comprises combining signals in a global claim 1 , simultaneous fit by direct or model-based methods.3. The method of claim 1 , wherein estimating the effective substrate comprises ...

METHOD OF TESTING BLOCKING ABILITY OF PHOTORESIST BLOCKING LAYER FOR ION IMPLANTATION

A method of testing a blocking ability of a photoresist blocking layer for ion implantation, comprising: forming a photoresist blocking layer (S) on a substrate; measuring a first thickness (S) of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer; implanting a predetermined amount of ions (S) into the photoresist blocking layer; measuring a second thickness (S) of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; and determining a blocking ability (S) of the photoresist blocking layer with the first thickness for ion implantation according to the second thickness. This method does not need to use a testing silicon slice during the process of testing the blocking ability of a photoresist blocking layer for ion implantation, and thus can reduce required costs during the testing process. 1. A method of testing a blocking ability of a photoresist blocking layer for ion implantation , comprising:forming a photoresist blocking layer on a substrate;measuring a first thickness of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer;implanting a predetermined amount of ions into the photoresist blocking layer;measuring a second thickness of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; anddetermining blocking ability of the photoresist blocking layer with the first thickness for ion implantation based on the second thickness.2. The method of testing a blocking ability of a photoresist blocking layer for ion implantation as claimed in claim 1 , wherein a prebaking process is performed to the substrate; a photoresist layer is formed on the substrate subsequent to the prebaking ...

DEVICE AND METHOD APPLICABLE FOR MEASURING ULTRATHIN THICKNESS OF FILM ON SUBSTRATE

The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently. 1. A device for measuring a thickness of a target ultrathin film on a substrate , and the device comprising:{'b': 1', '1, 'a radiation source configured to project an excitation radiation toward an upper surface of the target ultrathin film with an incident angle θ with respect to the upper surface, wherein the incident angle θ is near 90°; and'}{'b': '2', 'a fluorescence X-ray detector configured to measure a fluorescence X-ray converted from the excitation radiation by the substrate with a grazing detection angle θ with respect to the upper surface, over a preset grazing angular range.'}2. The device according to claim 1 , wherein the target ultrathin film has the thickness of a few nanometers (nm) or less.3. The device according to claim 1 , wherein the thickness of the target ultrathin film is 0.2 nm to 2 nm.4. The device according to claim 1 , wherein an energy of the excitation radiation is sufficiently high to excite the fluorescence X-ray from the substrate.5. The device according to claim 1 , wherein the excitation radiation comprises an X-ray beam or an electron beam.6. The device ...

DYNAMIC PEAK TRACKING IN X-RAY PHOTOELECTRON SPECTROSCOPY MEASUREMENT TOOL

Systems and methods for performing X-ray Photoelectron Spectroscopy (XPS) measurements in a semiconductor environment are disclosed. A reference element peak is selected and tracked as part of the measurement process. Peak shift of the reference element peak, in electron volts (eV) is tracked and applied to other portions of acquired spectrum to compensate for the shift, which results from surface charge fluctuation. 1. A method for performing measurements with an X-ray photoelectron spectroscopy measurement tool , comprising:irradiating a semiconductor substrate with X-ray energy;detecting emitted electrons from the semiconductor substrate;selecting a reference element peak based on the detected emitted electrons;recording an initial location for the reference element peak;computing a shift in location for the reference element peak; andapplying a correction to a plurality of element windows, based on the computed shift.2. The method of claim 1 , wherein selecting a reference element peak based on the detected emitted electrons comprises identifying a peak of maximum amplitude within a spectrum.3. The method of claim 2 , wherein selecting a reference element peak further comprises performing a pre-scan measurement at a first energy range claim 2 , and performing an analytical measurement at a second energy range.4. The method of claim 1 , wherein irradiating a semiconductor substrate with X-ray energy comprises irradiating a semiconductor substrate with X-ray energy for a duration ranging from 1 second to 120 seconds.5. The method of claim 1 , further comprising performing a measurement at multiple locations on the semiconductor substrate.6. The method of claim 5 , further comprising computing a standard deviation of shift for a plurality of locations.7. The method of claim 6 , further comprising computing a maximum shift value and corresponding location.8. The method of claim 7 , further comprising:recording a predetermined limit for the standard deviation of ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure. 1. A monitoring system for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer , the system comprising a computer system comprising data input and output utilities , a memory utility , and a data processor and analyzer utility , wherein:said data input utility is configured to receive measured data comprising data indicative of optical measurements performed on said IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on said IC and data ...

SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both. 1. A method for characterizing a silicon germanium film , said method comprising:generating an X-ray beam;positioning a sample in a pathway of said X-ray beam;collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam; anddetermining a thickness of the silicon germanium film from the XRF signal and the XPS signal.2. A method for characterizing a silicon germanium film , said method comprising:generating an X-ray beam;positioning a sample in a pathway of said X-ray beam;collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam; anddetermining a composition of the silicon germanium film from the XRF signal and the XPS signal.3. A system for characterizing a silicon germanium film , said system comprising:an X-ray source for generating an X-ray beam;a sample holder for positioning a sample in a pathway of said X-ray beam;a first detector for collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam; anda second detector for collecting an X-ray ...

HYBRIDIZATION FOR CHARACTERIZATION AND METROLOGY

A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool. 1. A computer-implemented method comprising:receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device;receiving, using the processor, data on the measured parameter from a second tool; andcalculating, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.2. The computer-implemented method of claim 1 , wherein the first tool comprises an X-ray tool.3. The computer-implemented method of claim 1 , wherein the second tool comprises an optical tool.4. The computer-implemented method of claim 1 , wherein the constraint based on the raw signal from the first tool is determined by the equation I=f(t claim 1 ,t claim 1 ,x) claim 1 , where I is a count associated with a Germanium L alpha signal claim 1 , t is thickness claim 1 , x is concentration of Germanium claim 1 , and n refers to a layer of a nanosheet.5. The computer-implemented method of claim 4 , wherein the calculation of the parameter uses a library search technique.6. The computer-implemented method of claim 4 , wherein the calculation of the parameter uses an optimization technique.7. The computer-implemented method of claim 4 , wherein the second tool comprises an optical scatterometer.8. A system comprising:a memory; and receive a raw signal from a first tool representing a measured parameter of a semiconductor device;', ' ...

Pattern Height Measurement Device and Charged Particle Beam Device

A purpose of the present invention is to provide: a pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, in the height direction; and a charged particle beam device. In order to achieve the purpose, this pattern height measurement device comprises a calculation device that finds the dimensions of a sample, in the height direction, on the basis of first reflected light information obtained by dispersing light that is reflected when the sample is irradiated with light. The calculation device: finds second reflected light information on the basis of a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs, as the dimension in the height direction of the pattern, the value for the dimension in the height direction of the sample in the second reflected light information when the first reflected light information and the second reflected light information fulfil prescribed conditions. 1. A pattern height measurement device that is provided with a calculation device that calculates a dimension of a sample in a height direction , on the basis of first reflected light information acquired by dispersing reflected light produced when the sample is irradiated with light ,wherein the calculation device calculates second reflected light information on the basis of a formula for a relationship between a value for dimension of a pattern formed on the sample in a surface direction of the sample, which is obtained by irradiating the sample with a charged particle beam, a value for a dimension of the sample in the height direction, and reflected light information, compares the second ...

METHOD FOR INSPECTING WELD PENETRATION DEPTH

In a butt-welded joint structure in which the entire peripheral edge or both end sides of the abutting surface are welded, first and second cutouts for determining insufficient penetration and determining excessive penetration are formed. After butt welding, ultrasound is beamed onto each of the first and second cutouts of the joint structure and the reflected wave is measured. The acceptability of the weld penetration depth is thus determined on the basis of both of the reflected waves. This determination is performed on the entire peripheral edge portion or both end side portions of the butted face between the welded materials, and the acceptability of the weld penetration depth of the corresponding portions is inspected. 1. A method for inspecting a weld penetration depth , characterized in thatafter performing butt welding of both end portions or an entire peripheral end portion of abutting surface between workpieces including a joint structure that includes, in each of the both end portions or the entire peripheral end portion of the abutting surface between the workpieces, a cutout that reflects ultrasonic waves in a case where a weld has not penetrated therein, the cutout including a first cutout that is used to determine insufficient weld penetration and a second cutout that is used to determine excessive weld penetration,performing, on the both end portions or the entire peripheral end portion of the abutting surface between the workpieces, a first step of emitting ultrasonic waves toward the first cutout or the second cutout of the joint structure and measuring reflected waves thereof, a second step of emitting the ultrasonic waves toward the second cutout or the first cutout of the joint structure and measuring reflected waves thereof, and a third step of determining whether the weld penetration depth is satisfactory or not based on the reflected waves measured in the first step and the second step, and thus inspecting whether the weld penetration depth ...

MATERIAL EROSION MONITORING SYSTEM AND METHOD

Disclosed is an improved system and method to evaluate the status of a material. The system and method are operative to identify flaws and measure the erosion profile and thickness of different materials, including refractory materials, using electromagnetic waves. The system is designed to reduce a plurality of reflections, associated with the propagation of electromagnetic waves launched into the material under evaluation, by a sufficient extent so as to enable detection of electromagnetic waves of interest reflected from remote discontinuities of the material. Furthermore, the system and method utilize a configuration and signal processing techniques that reduce clutter and enable the isolation of electromagnetic waves of interest. Moreover, the launcher is impedance matched to the material under evaluation, and the feeding mechanism is designed to mitigate multiple reflection effects to further suppress clutter. 1. A system for evaluating a status of a material , comprising:a. an electromagnetic wave launcher having a first feeding end and a second launching end, wherein said first feeding end includes a feeding mechanism to excite an electromagnetic wave able to propagate through said electromagnetic wave launcher, wherein said second launching end is physically structured to reduce a plurality of reflections and probe ringing of said electromagnetic wave propagating through said launching end, by a sufficient extent so as to enable detection of an electromagnetic wave of interest reflected from a remote discontinuity of said material, wherein said electromagnetic wave launcher is provided a physical configuration to have an impedance at said second launching end that substantially matches an impedance of a near surface of said material, wherein said electromagnetic wave launcher is adapted to enable receipt of said electromagnetic wave of interest reflected from said remote discontinuity of said material within a time period sufficient to distinguish between ...

INSPECTION APPARATUS, INSPECTION METHOD, COMPUTER PROGRAM AND RECORDING MEDIUM

An inspection apparatus is provided with: an irradiating device configured to irradiate a sample in which a plurality of layers are laminated with a terahertz wave; a detecting device configured to detect the terahertz wave from the sample to obtain a detected waveform; and an estimating device configured to estimate a position of a first boundary surface on the basis of a second boundary surface pulse wave and a library, the second boundary surface pulse wave appearing in the detected waveform to correspond to a second boundary surface that is farther from an outer surface than the first boundary surface, the library representing an estimated waveform of the terahertz wave from the sample. 1. An inspection apparatus comprising:an irradiator that is configured to irradiate an outer surface of a sample in which a plurality of layers are laminated with a terahertz wave;a detector that is configured to detect the terahertz wave from the sample to obtain a detected waveform; anda controller that is programmed to estimate a position of a first boundary surface of the plurality of layers on the basis of a second boundary surface pulse wave and a library without using a first boundary surface pulse wave corresponding to the first boundary surface, the second boundary surface pulse wave appearing in the detected waveform to correspond to a second boundary surface of the plurality of layers, the second boundary surface being farther from the outer surface than the first boundary surface, the library indicating an estimated waveform of the terahertz wave from the sample.2. (canceled)3. (canceled)4. The inspection apparatus according to claim 1 , whereinthe sample includes a plurality of second boundary surfaces,the controller is programmed to estimate the position of the first boundary surface on the basis of one second boundary surface pulse wave of a plurality of second boundary surface pulse waves, the one second boundary surface pulse wave corresponds to one second ...

ELECTRON BEAM INSPECTION APPARATUS

An electron beam inspection apparatus includes an electron beam irradiating unit, an electric field generating unit, an energy analyzing unit, and a detection unit. The electron beam irradiating unit irradiates an electron beam on a sample. The electric field generating unit generates an electric field in an irradiation direction of the electron beam. The energy analyzing unit analyzes energy of electrons emitted from the sample caused by emission of the electron beam, where the electrons are accelerated by the electric field. The detection unit detects a depth position of a portion to which the electrons are emitted in the irradiation direction of the electron beam based on a result of the energy analysis. 1. An electron beam inspection apparatus , comprising:an electron beam irradiating unit to irradiate an electron beam on a sample;an electric field generating unit to generate an electric field in an irradiation direction of the electron beam;an energy analyzing unit to analyze energy of electrons emitted from the sample caused by emission of the electron beam, the electrons accelerated by the electric field; anda detection unit to detect a depth position of a portion to which the electrons are emitted in the irradiation direction of the electron beam based on a result of the energy analysis.2. The apparatus as claimed in claim 1 , wherein the detection unit is to detect a depth position of a defect based on a relationship between the energy of the electrons and a spectrum intensity based on the result of the energy analysis.3. The apparatus as claimed in claim 1 , wherein the energy analyzing unit is to obtain characteristics indicating a relationship between the energy of the electrons and a spectrum intensity claim 1 , the characteristics to be obtained by scanning pass energy of the emitted electrons claim 1 , and the energy of the electrons to be analyzed based on the obtained characteristics.4. The apparatus as claimed in claim 3 , wherein the detection ...

ANALYSER ARRANGEMENT FOR PARTICLE SPECTROMETER

The present invention relates to a method for determining at least one parameter related to charged particles emitted from a particle emitting sample, e.g. a parameter related to the energies, the start directions, the start positions or the spin of the particles. The method comprises the steps of guiding a beam of charged particles into an entrance of a measurement region by means of a lens system, and detecting positions of the particles indicative of said at least one parameter within the measurement region. Furthermore, the method comprises the steps of deflecting the particle beam at least twice in the same coordinate direction before entrance of the particle beam into the measurement region. Thereby, both the position and the direction of the particle beam at the entrance of the measurement region can be controlled in a way that to some extent eliminates the need for physical manipulation of the sample. This in turn allows the sample to be efficiently cooled such that the energy resolution in energy measurements can be improved. 1. A method for determining at least one parameter related to charged particles emitted from a particle emitting sample , comprising the steps of:forming a particle beam of said charged particles and transporting the particles between said particle emitting sample and an entrance of a measurement region by a lens system having a substantially straight optical axis;deflecting the particle beam in at least a first coordinate direction perpendicular to the optical axis of the lens system before entrance of the particle beam into the measurement region;deflecting the particle beam in the same at least first coordinate direction at least a second time before entrance of the particle beam into the measurement region; anddetecting the positions of said charged particles in said measurement region, the positions being indicative of said at least one parameter.2. The method according to claim 1 , wherein the first deflection of the particle ...

METHOD FOR THE ESTIMATION OF KEROGEN MATURITY BY X-RAY PHOTOELECTRON SPECTROSCOPY

Method to estimate the kerogen maturity of a rock containing organic material by X-ray photoelectron spectroscopy (XPS). Significant changes in the XPS spectrum due to changes in C hybridization, particularly sphybridization, allow to quantify kerogen maturity by comparison with an already known sample. 2. The method according to claim 1 , wherein said rock containing organic material is a sedimentary rock.3. The method according to claim 2 , wherein said sedimentary rock is a shale.4. The method according to claim 1 , wherein the sample of the rock containing organic material to be analyzed and characterized is selected from a core claim 1 , a cutting or an outcrop sample.5. The method according to claim 1 , where the area of the sample analyzed in step b) of obtaining a C1s spectrum of the rock sample by X-ray photoelectron spectroscopy is of about 1 mm.6. The method according to claim 1 , where step a) of providing a sample of the rock containing organic material to be analyzed and characterized further includes conditioning the sample.7. The method according to claim 6 , wherein the conditioning of the sample takes place inside the X-ray photoelectron spectroscopy equipment used in step b).8. The method according to claim 7 , wherein the conditioning of the sample comprises sputtering with argon.9. The method according to claim 6 , wherein conditioning the sample does not include extraction claim 6 , dissolution or grinding operations. The present invention relates to a method for estimation of kerogen maturity useful in hydrocarbon recovery operations. In particular, the present invention relates to a method for the estimation of kerogen maturity by X-ray photoelectron spectroscopy.The kerogen maturity (KM), also referred to as “Level of Organic Maturity” (LOM) of a geological area is related to its hydrocarbon potential, and can therefore be used in the assessment of the commercial value of a shale reservoir.Several experimental techniques for estimating the ...

X-RAY REFLECTOMETER

The X-ray reflectometer of the present invention includes: an irradiation angle variable unit () configured to vary an irradiation angle of a focused X-ray beam () with a sample surface (); a position sensitive detector () which is fixed; and a reflection intensity calculation unit () configured to, per reflection angle of reflected X-rays () constituting a reflected X-ray beam (), integrate a detected intensity by a corresponding detection element (), for only the detection elements () positioned within a divergence angle width of the reflected X-ray beam () in the position sensitive detector (), in synchronization of variation in the irradiation angle (θ) of the focused X-ray beam () by the irradiation angle variable unit (). 1. An X-ray reflectometer comprising:a focused X-ray beam formation unit having an X-ray source which emits X-rays, a focusing device which focuses the X-rays from the X-ray source, and a slit which limits a focusing angle width of the X-rays focused by the focusing device, to form a focused X-ray beam;a sample height setting unit having a sample table allowing a sample to be placed thereon, and configured to move the sample table in a height direction to set a height of a sample surface thereof;an irradiation angle variable unit configured to vary an irradiation angle of the focused X-ray beam with the sample surface;a position sensitive detector having a plurality of detection elements arranged in the height direction and configured to, for a reflected X-ray beam obtained by the focused X-ray beam being reflected by the sample, detect each intensity of reflected X-rays constituting the reflected X-ray beam and having each individual reflection angle, by corresponding each detection element; anda reflection intensity calculation unit configured to, per reflection angle of the reflected X-rays constituting the reflected X-ray beam, integrate the detected intensity by the corresponding detection element, for only the detection elements ...

XPS METROLOGY FOR PROCESS CONTROL IN SELECTIVE DEPOSITION

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process. 1. A method for monitoring quality of process forming a second layer having a second specie over a first layer having first specie using X-ray photoelectron spectroscopy (XPS) measurements , comprising:obtaining a reference integrated intensity of the first specie from an XPS measurement of a reference wafer having the first layer;obtaining a reference integrated intensity of the second species from an XPS measurement of the second layer deposited on the first layer of the reference wafer;generating a reference value by taking the ratio of the reference integrated intensity of the second specie and the reference integrated intensity of the first specie;taking an XPS measurement of a sample wafer having the first layer and generating sample integrated intensity of the first species;taking an XPS measurement of the sample wafer after the second layer has been deposited over the first layer, and generating sample integrated intensity of the second specie;generating a sample value by taking a ratio of the sample integrated intensity of the second specie and the sample integrated intensity of the first specie;generating a quality of process value by taking the ratio of the sample value and the reference value.2. The method of claim 1 , wherein obtaining the reference integrated intensity of the first specie and obtaining the reference integrated intensity of the second specie are performed simultaneously on the reference wafer having the second layer ...

SYSTEM AND METHOD FOR NON-IONIZING NON-DESTRUCTIVE DETECTION OF STRUCTURAL DEFECTS IN MATERIALS

A means to enable the inspection of industrial materials in order to see hidden structural defects that can lead to an early failure, using electromagnetic fields and harmonic waves. 1. A system for determining the effects of materials and their structure using electromagnetic fields and harmonic waves , comprising:a power supply unit and an electromagnetic transducer, wherein the power supply unit and electromagnetic transducer are connected in series;a plurality of harmonic frequency analyzers;a plurality of measuring instruments;wherein the electromagnetic transducer is connected to a comparator unit, a measurement unit, and a manipulator; at least one of the plurality of harmonic frequency analyzers;', 'a first voltage generator;', 'a voltage regulator;', 'a power amplifier;', 'a first ampere meter;', 'wherein the first voltage generator, voltage regulator, power amplifier, first ampere meter, and the at least one of the plurality of harmonic frequency analyzers are configured to produce and measure alternating current in a circuit, the circuit comprising a magnetized winding of the electromagnetic transducer;', 'a DC power supply and second ampere meter, wherein the DC power supply and second ampere meter are configured to produce and measure direct current in a circuit, the circuit comprising a magnetized winding of the electromagnetic transducer and a second voltage generator; and', 'a phase shifter configured to measure the phase of photons, wherein the measurement comprises measuring the phase of a reference voltage supplied by the second voltage generator through at least one of the plurality of harmonic frequency analyzers and a selector switch of the manipulator connected to the comparator unit., 'wherein the power supply unit further comprises2. The system of claim 1 , further comprising a device for analyzing material samples claim 1 , wherein the device comprises a plurality of electromagnetic transducers that are connected in series claim 1 , wherein ...

XPS AND RAMAN SAMPLE ANALYSIS SYSTEM AND METHOD

A process of analyzing a sample by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) includes providing a sample having a sample surface within a vacuum chamber, performing a Raman spectroscopic analysis on a plurality of selected areas of the sample surface within the vacuum chamber to map an area of the sample surface comprising the selected areas, the Raman spectroscopic analysis including identifying one or more face in one or more of the selected areas of the sample surface, and performing an X-ray photoelectron spectroscopy (XPS) analysis of one or more selected areas of the sample surface containing at least one chemical and/or structural feature identified by the Raman spectroscopic analysis, wherein the duration of the XPS analysis of a given selected area of the sample surface is longer than the duration of the Raman spectroscopic analysis of that given selected area. 1. A process of analyzing a sample by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) , the process comprising:a. providing a sample having a sample surface within a vacuum chamber;b. performing a Raman spectroscopic analysis on a plurality of selected areas of the sample surface within the vacuum chamber to map an area of the sample surface comprising the selected areas, the Raman spectroscopic analysis including identifying one or more chemical and/or structural features of the sample surface in one or more of the selected areas of the sample surface; andc. performing an X-ray photoelectron spectroscopy (XPS) analysis of one or more selected areas of the sample surface.2. The process of claim 1 , wherein the duration of the XPS analysis is at least 2 times claim 1 , or 5 times claim 1 , or 10 times claim 1 , or 100 times longer than the duration of mapping of the sample surface by the Raman spectroscopic analysis.3. The process of claim 1 , wherein a laser beam spot for the Raman spectroscopic analysis and an X-ray beam spot for the XPS analysis are substantially ...

SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both. 1. A method for characterizing a silicon germanium film , said method comprising:generating an X-ray beam;positioning a sample in a pathway of said X-ray beam;collecting an X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam;collecting an X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam; anddetermining a thickness of the silicon germanium film from the XRF signal and the XPS signal.2. The method of claim 1 , further comprising:determining a composition of the silicon germanium film from the XRF signal and the XPS signal.3. The method of claim 2 , wherein determining the composition of the silicon germanium film comprises comparing the XRF signal and the XPS signal to a realistic material layer mixing model that scales the predicted intensity of an XPS Ge signal and an XRF Ge signal relative to a pure germanium film claim 2 , constraining the remaining fraction of the silicon germanium film to Si.4. The method of claim 1 , wherein collecting the XPS signal and collecting the XRF signal is performed simultaneously.5. The method of claim 1 , wherein collecting the XPS signal and collecting the XRF signal comprises collecting within an approximately 50 μmmetrology box of the sample.6. The method of claim 1 , wherein determining the ...

APPARATUS AND METHODS FOR THICKNESS AND VELOCITY MEASUREMENT OF FLAT MOVING MATERIALS USING HIGH FREQUENCY RADAR TECHNOLOGIES

An apparatus and associated methods for measuring thickness and velocity of flat moving materials utilizing high frequency radar technologies. Two identical radar-based systems for measuring absolute distances between the source of the radar-generated electromagnetic wave and each surface of a flat sheet material is used to determine the thickness of that material as a relative distance. A pair of high frequency radars situated at different locations used to measure the delay time between the occurrences of fingerprint-like unevenness on the moving flat sheet of material to determine the linear velocity of the moving material sheet.

COMPOSITE AND PNEUMATIC TIRE

The present invention provides a composite that has good initial adhesion and good adhesion after high temperature and high humidity aging. Provided is a composite including: a topping rubber composition having a fatty acid content of 0.8% by mass or less; and an adherend plated with a copper-containing layer. 1. A composite , comprising:a topping rubber composition having a fatty acid content of 0.8% by mass or less; andan adherend plated with a copper-containing layer.2. The composite according to claim 1 ,wherein a rubber component in the rubber composition consists only of natural rubber.3. The composite according to claim 1 ,wherein the rubber composition comprises a natural rubber having a fatty acid content of 0.8% by mass or less.4. The composite according to claim 1 ,wherein not more than 0.8% by mass of fatty acids are attached to a surface of the adherend.5. A pneumatic tire claim 1 , comprising the composite according to .6. A rubber/cord composite claim 1 , comprising:a cord topping rubber composition having a sulfate ion concentration of 0.8% by mass or less; anda cord plated with a copper-containing layer.7. The rubber/cord composite according to claim 6 ,wherein a rubber component in the rubber composition consists only of natural rubber.8. The rubber/cord composite according to claim 6 ,wherein the rubber composition has a sulfate ion concentration of 0.6% by mass or less.9. A pneumatic tire claim 6 , comprising the rubber/cord composite according to .10. An adhesion evaluation method for evaluating adhesion of a rubber/cord composite comprising a cord topping rubber composition and a cord plated with a copper-containing layer claim 6 ,the method comprising evaluation based on a sulfate ion concentration in the cord topping rubber composition. The present invention relates to composites such as a rubber/cord composite, pneumatic tires, and an adhesion evaluation method.Conventional cord topping rubber compositions for carcasses or belts generally ...

Optically stimulated electron emission apparatus

An apparatus for inspecting a surface includes a housing and a probe. The housing includes a light source to direct light along a longitudinal axis and a shutter to selectively allow light to pass through to the probe. The probe includes a body portion and a head portion. The head portion of the probe includes a collector to detect photoelectrons emitted from the surface in response to light from the light source impinging on the surface. A proximal portion of the head portion moves relative to a distal portion of the head portion to allow for variations in angle relative to the surface.

Hard X-Ray Photoelectron Spectroscopy Apparatus

[Problem] 1. A hard X-ray photoelectron spectroscopy apparatus comprising ,an X-ray source,an analyzer,a sample manipulator,an analysis chamber, andvacuum evacuation systems,wherein, in a three dimensional space defined by a XYZ coordinate axis system, a plate-like sample is arranged to be rotatable around the X axis by said sample manipulator,said X-ray source comprises;an electron gun that accelerates and further focuses electrons,a target that is irradiated with the electrons accelerated and focused by said focusing electron gun to generate an X-ray,a monochromater crystal assembly, wherein the crystal assembly meets the Bragg condition of X-ray diffraction in X-Y plane to diffract/reflect and monochromatize the X-ray generated in said target and extract characteristic X-rays only, and on the other hand, the electron-beam-irradiation position on the target-center of the monochromater crystal assembly-center of the sample is arranged on the Rowland circle to minimize focusing aberration to the sample, preferably electron-beam-irradiation position on said target and the center of the sample are located on each of two focuses of an ellipse coming in contact with said Rowland circle in the center of the crystals, said monochromater crystal assembly has a toroidal surface in Z axial direction acquired by rotating said ellipse coming in contact with said Rowland circle around a straight line connecting the electron-beam-irradiation position on said target and the center of the sample, and,a vacuum vessel for installing these components,wherein the monochromater crystal assembly used for monochromatization with diffraction and reflection of said X-ray source is located on the Rowland circle together with said target and said sample to meet the condition that the dispersed X-ray beam concentrates on the surface of the sample with the minimum aberration,wherein said Rowland circle is located to be orthogonal to the surface of the sample,wherein an axis of said analyzer is ...

MONITORING SYSTEM FOR DEPOSITION AND METHOD OF OPERATION THEREOF

A monitoring system and method of operation thereof includes: providing a substrate on a platform; performing a scan of the substrate; depositing a material layer on the substrate; monitoring a deposition thickness of the material layer; and generating an alert based on an error in the deposition thickness. 1. A method of operation of a monitoring system comprising:providing a substrate on a platform;performing a scan of the substrate;depositing a material layer on the substrate;monitoring a deposition thickness of the material layer; andgenerating an alert based on an error in the deposition thickness.2. The method as claimed in wherein monitoring the deposition thickness includes performing a continuous scan during a deposition process.3. The method as claimed in wherein monitoring the deposition thickness includes scanning with a wavelength of 495 nm to 570 nm.4. The method as claimed in wherein monitoring the deposition thickness includes monitoring a spectral signature of the material layer.6. A monitoring system comprising:a platform for supporting a substrate;a deposition system for depositing a material layer on the substrate;a sensor assembly for detecting an error in the material layer; anda second deposition system for depositing another of the material layer on the substrate.7. The system as claimed in wherein the platform can include an electrostatic chuck claim 6 , a rotating chuck claim 6 , or a combination thereof.8. The system as claimed in wherein the sensor assembly includes a light reflectance system claim 6 , an x-ray system claim 6 , a laser system claim 6 , a camera system claim 6 , or a combination thereof.9. The system as claimed in wherein the sensor assembly can include a source and a detector claim 6 , the source and the detector are orientated in a forty-five degree angle to a layer top surface of the material layer.10. The system as claimed in further comprising an inspection chamber for scanning a deposition thickness after deposition ...

X-RAY REFLECTOMETRY APPARATUS FOR SAMPLES WITH A MINISCULE MEASUREMENT AREA AND A THICKNESS IN NANOMETERS AND METHOD THEREOF

This application relates to an apparatus and methods for enhancing the performance of X-ray reflectometry (XRR) when used in characterizing thin films and nanostructures supported on a flat substrate. In particular, this application is targeted for addressing the difficulties encountered when XRR is applied to samples with very limited sampling volume, i.e. a combination of small sampling area and miniscule sample thickness or structure height. Point focused X-ray with long wavelength, greater than that from a copper anode or 0.154 nm, is preferably used with appropriately controlled collimations on both incident and detection arms to enable the XRR measurements of samples with limited volumes. 1. An X-ray reflectometry (XRR) apparatus , comprising:an X-ray source for emitting an X-ray with a wavelength larger than 0.154 nanometers (nm);an X-ray reflector for point focusing the X-ray onto a surface of a sample;a set of incident slits between the X-ray reflector and the sample, for adjusting an incident angle opening of the X-ray;an X-ray detector for collecting the X-ray reflected by the surface of the sample; anda set of detector slits between the X-ray detector and the sample, for controlling a detecting angle opening;wherein the X-ray is point focused by the X-ray reflector onto the surface with an incident angle adjustable over a preset range.2. The XRR apparatus in claim 1 , wherein the wavelength is no more than twice of a characteristic length of a structure of the surface.3. The XRR apparatus in claim 2 , wherein the characteristic length is selected from the group consisting of film-thicknesses of the surface and heights of a nanostructure of the surface.4. The XRR apparatus in claim 1 , wherein the X-ray reflector is selected from the group consisting of single crystal monochromators and multilayer mirrors.5. The XRR apparatus in claim 4 , wherein the X-ray reflector is a multilayer mirror type and a wavelength dispersion of the X-ray reflector is less ...

METHOD AND SYSTEM FOR NON-DESTRUCTIVE METROLOGY OF THIN LAYERS

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF). 1. A method for determining a property of a layer of an integrated circuit (IC) , the layer being formed over an underlayer , comprising the steps of:irradiating the IC to thereby generate emission from the IC;collecting the emission from the IC and determining the kinetic energy of emitted species within the emission to thereby calculate emission intensity of various species emitted from the layer and emission intensity of species emitted from the underlayer;calculating a ratio of the emission intensity of species emitted from the layer and emission intensity of species emitted from the underlayer;using the ratio to determine material composition or thickness of the layer.2. The method of claim 1 , wherein the steps of irradiating IC and collecting emission is performed using one of x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).35-. (canceled)6. The method of claim 1 , wherein a predictive intensity function that is dependent on the thickness of a layer is determined for each emission species and a ratio of two predictive intensity functions is formulated; and wherein the ratio is iterated to improve the determined thickness of the layer.7. The method of ...

Height Measurement Device and Charged Particle Beam Device

The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height. 1. A height measurement device comprising:a calculation device that calculates a dimension of a structure on a sample based on a detection signal acquired by irradiating the sample with charged particle beams,wherein the calculation device calculates a dimension between an irradiation mark of a first charged particle beam formed in a first height of the sample and an irradiation mark of a second charged particle beam formed is a second height of the sample, and calculates a dimension between the first height and the second height based on the dimension, irradiation angles using the charged particle beams when the irradiation marks of the first charged particle beam and the irradiation marks of the second charged particle beam are formed, or an angle of an inclined surface formed by cutting a part of the irradiation mark of the first charged particle beam and a part of the irradiation mark of the second charged particle beam.2. The height measurement device according to claim 1 ,wherein the irradiation mark ...

Syringe with pecvd lubricity layer

Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier and lubricity coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system is also disclosed.

CHARACTERIZING A SAMPLE BY MATERIAL BASIS DECOMPOSITION

A method for characterizing a sample, by estimating a plurality of characteristic thicknesses, each being associated with a calibration material, including acquiring an energy spectrum (S) transmitted through this sample, located in an X and/or gamma spectral band, naled spectrum transmitted through the sample; for each spectrum of a plurality of calibration spectra (S(L; L)), calculating a likelihood from said calibration spectrum (S(L; L)), and from the spectrum transmitted through the sample (S), each calibration spectrum (S(L; L)) corresponding to the energy spectrum transmitted through a stack of gauge blocks, each formed of a known thickness of a calibration material; estimating the characteristic thicknesses (L, L) associated with the sample according to the criterion of maximum likelihood. 1. A method for characterizing a sample , by estimating a plurality of thicknesses , named characteristic thicknesses , each being associated with a material named calibration material , wherein said method comprises the following steps:{'sup': 'ech', 'acquiring an energy spectrum, named spectrum transmitted through the sample (S), said spectrum being defined by a number of photons transmitted through the sample in each channel of a plurality of energy channels located in an X and/or gamma spectral band;'}{'sup': base', 'base', 'ech', 'base, 'sub': 1', '2', '1', '2', '1', '2, 'for each spectrum of a plurality of energy spectra named calibration spectra (S(L; L)), calculating the value of a likelihood function from said calibration spectrum (S(L; L)) and from the spectrum transmitted through the sample (S), each calibration spectrum (S(L; L)) corresponding to the spectrum transmitted through a stack of gauge blocks, each gauge block being formed of a known thickness of a calibration material;'}{'sub': 1', '2, 'sup': ech', 'ech, 'determining the estimations of the characteristic thicknesses ({circumflex over (L)}; {circumflex over (L)}) associated with the sample, from said ...

QUANTITATIVE DETERMINATION OF NITROGEN SPECIES DISTRIBUTION IN DISPERSANTS

The nitrogen species in a long chain alkenyl succinimide are quantitated and speciated by means of X-Ray Photoelectron Spectroscopy with speciation being made by chemometrically curve resolving the XPS spectrum. 1. A method of quantitating and speciating the nitrogen compounds in a succinimide which comprises subjecting the succinimide to X-Ray Photoelectron Spectroscopy (XPS) to produce an XPS spectrum of the electron binding energies of the succinimide.2. A method according to in which the electron binding energies of the succinimide are in the range from about 380 eV to 410 eV.3. A method according to in which the electron binding energies of the succinimide are in the range from about 390 eV to 405 eV.4. A method according to which includes the step of chemometrically curve resolving the XPS spectrum.5. A method according to in which the XPS spectrum is chemometrically curve resolved to indicate peaks corresponding to total amine and total imide and/or amide.6. A method according to in which the XPS spectrum is chemometrically curve resolved to indicate peaks corresponding to total primary claim 4 , secondary claim 4 , and tertiary amines (—C—NH claim 4 , —(C—)NH claim 4 , and —(C—)N).7. A method according to in which the XPS spectrum is chemometrically curve resolved to indicate peaks at fixed energy positions of 399.0 claim 4 , 400.2 claim 4 , and 401.3 (±0.1) eV.8. A method according to in which the XPS spectrum is produced using aluminum Kα X-rays.9. A method according to in which the succinimide is a bis-imide.10. A method according to in which the succinimide is a borated succinimide. This application claims priority to U.S. Provisional Application Ser. No. 62/013,751 filed Jun. 18, 2014, herein incorporated by reference in its entirety.This invention relates to a method for the quantitative determination of nitrogen species in dispersants and more particularly to the quantitative determination of nitrogen species relative to carbon and their distribution ...

Ultrasonic Sensor And Electronic Apparatus

An ultrasonic sensor includes a first base facing a conveying surface, a transmission section on a first axis tilted relative to the conveying surface and at a far side of the first base for transmitting an ultrasonic wave toward the first axis, and a reception section on the first axis and at a far side of the conveying surface for receiving the ultrasonic wave. The transmission section has a plurality of transmission elements for transmitting the ultrasonic wave arranged to cross the first axis. The first base has a first aperture through which the ultrasonic wave transmitted from the transmission section along the first axis passes. An area of the first aperture is smaller than an area of an ultrasonic wave transmission surface of the transmission section. The transmission section delays driving the transmission elements to converge the ultrasonic wave transmitted from the transmission section toward the first aperture. 1. An ultrasonic sensor comprising:a first base opposed to a conveying surface on which an object is conveyed;a transmission section disposed on a first axis tilted with respect to the conveying surface, and at a side opposite to the first base to the conveying surface, and configured to transmit an ultrasonic wave toward the first axis; anda reception section disposed on the first axis, and at a side opposite to the conveying surface to the transmission section, and configured to receive the ultrasonic wave, whereinthe transmission section is provided with a plurality of transmission elements each configured to transmit the ultrasonic wave arranged along a direction crossing the first axis,the first base is provided with a first aperture part through which the ultrasonic wave transmitted from the transmission section along the first axis passes, an aperture area of the first aperture part being smaller than an area of a transmission surface configured to transmit the ultrasonic wave of the transmission section, andthe transmission section ...

FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. A method for thin film characterization of a sample , comprising:measuring first XPS and/or XRF intensity signals for a reference sample having a first layer above a substrate, the first XPS and/or XRF intensity signals including information for the first layer and for the substrate;determining at least one of a thickness or a composition of the first layer based on the first XPS and/or XRF intensity signals;combining the information for the first layer and for the substrate;measuring second XPS and/or XRF intensity signals for an inspected sample having a second layer above the first layer, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the substrate;determining at least one of a thickness or a composition of the second layer based on the second XPS and/or XRF intensity signals.2. The method of claim 1 , wherein the data of ...

FEED-FORWARD OF MULTI-LAYER AND MULTI-PROCESS INFORMATION USING XPS AND XRF TECHNOLOGIES

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate. 1. (canceled)2. (canceled)3. A method for thin film characterization of a sample , comprising:measuring first XPS and/or XRF intensity signals for a sample having a first layer above at least one underneath layer, the first XPS and/or XRF intensity signals including information for the first layer and for the at least one underneath layer;based on the first XPS and/or XRF intensity signals: determining at least one of a thickness or a composition of the first layer, or combining the information for the first layer and for the at least one underneath layer to thereby estimate an effective substrate;measuring second XPS and/or XRF intensity signals for an inspected sample having a second layer above the first layer, the second XPS and/or XRF intensity signals including information for the second layer, for the first layer and for the at least one underneath layer;determining at least one of a ...

GAS SENSORS AND METHODS OF SENSING A GAS-PHASE ANALYTE

Gas sensors are provided. The gas sensors comprise: a substrate; a plurality of electrodes on the substrate; and a polymeric sensing layer on the substrate for adsorbing a gas-phase analyte. The adsorption of the analyte is effective to change a property of the gas sensor that results in a change in an output signal from the gas sensor. The polymeric sensing layer comprises a polymer chosen from substituted or unsubstituted polyarylenes comprising the reaction product of monomers comprising a first monomer comprising an aromatic acetylene group and a second monomer comprising two or more cyclopentadienone groups, or a cured product of the reaction product. The gas sensors and methods of using such sensors find particular applicability in the sensing of gas-phase organic analytes. 1. A gas sensor , comprising:a substrate;a plurality of electrodes on the substrate; anda polymeric sensing layer on the substrate for adsorbing a gas-phase analyte, the adsorption of which analyte is effective to change a property of the gas sensor that results in a change in an output signal from the gas sensor, wherein the polymeric sensing layer comprises a polymer chosen from substituted or unsubstituted polyarylenes comprising the reaction product of monomers comprising a first monomer comprising an aromatic acetylene group and a second monomer comprising two or more cyclopentadienone groups, or a cured product of the reaction product.2. The gas sensor of claim 1 , wherein the polymer exhibits an FTIR spectroscopy spectrum having a ratio of total peak area from 1648 to 1690 cmto total peak area from 1480 to 1522 cmof 0.15 or less.3. The gas sensor of claim 2 , wherein the polymeric sensing layer exhibits a Raman spectroscopy spectrum having a ratio of total peak area from 2190 to 2250 cmto total peak area from 1550 to 1650 cmof 1.0 or less.4. The gas sensor of claim 1 , wherein the polymeric sensing layer has an oxygen content of 7 atomic % or less as measured by x-ray photoelectron ...

SEMICONDUCTOR DEVICE

A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The first insulating layer is in contact with part of the top surface of the semiconductor layer, the conductive layer is positioned over the first insulating layer, and the second insulating layer is positioned over the semiconductor layer. The semiconductor layer contains a metal oxide and includes a first region overlapping with the conductive layer and a second region not overlapping with the conductive layer. The second region is in contact with the second insulating layer. The second insulating layer contains oxygen and a first element. The first element is one or more of phosphorus, boron, magnesium, aluminum, and silicon. 1. A semiconductor device comprising:a semiconductor layer;a first insulating layer;a second insulating layer; anda conductive layer,wherein the first insulating layer is in contact with part of a top surface of the semiconductor layer,wherein the conductive layer is over the first insulating layer,wherein the second insulating layer is over the semiconductor layer,wherein the semiconductor layer comprises a metal oxide,wherein the semiconductor layer comprises a first region overlapping with the conductive layer and a second region not overlapping with the conductive layer,wherein the second region is in contact with the second insulating layer,wherein the second insulating layer comprises oxygen and a first element,wherein the first element is one or more of phosphorus and boron, andwherein in a thickness direction of the second insulating layer, a ratio of a maximum concentration of the first element to a minimum concentration of the first element is greater than or equal to 1.0 and less than or equal ...

Thiol labeling of DNA for attachment to gold surfaces

A method for adsorbing nucleic acids to a surface of a gold substrate for analyzing the structure of the nucleic acid includes the steps of thiolating the nucleic acid by substituting at least one non-bridging internucleotide oxygen of each phosphodiester moiety with sulfur, depositing the thiolated nucleic acid on the gold surface, and subjecting the nucleic acid to analysis for determining the atomic or molecular structure thereof. The gold surface is prepared by subjecting a gold single crystal to mechanical polishing, electropolishing, cleaning by cycles of Ar+ sputtering and annealing under vacuum until no contamination is detected by Auger electron spectroscopy, and flame annealing and quenching in methanol. Gold films deposited on atomically flat substrates, such as mica, can also be used. The thiolated DNA is deposited on the gold surface for a sufficient time for covalent bonds to form between the sulfur and the gold. Scanning tunneling microscopy, atomic force microscopy, angle-dependent x-ray photoelectron spectroscopy, and Auger electron spectroscopy are used to analyze the nucleic acid structure.

Damage condition determination device, damage condition determination method, program

劣化分析法以及化学态测量法

本发明提供能够详细分析聚合物材料的劣化、特别是具有低导电率的聚合物材料的表面状态的劣化的劣化分析法。本发明涉及劣化分析法，其包括：用高强度X射线辐照其上形成有厚度为

Способ анализа старения и способ определения химического состояния

1. Способ анализа старения, включающий облучение полимерного материала с образованным на нем металлическим покрытием толщиной 100 А или менее, рентгеновскими лучами высокой интенсивности и измерение поглощения рентгеновских лучей при изменении энергии рентгеновского излучения, для исследования старения полимера.2. Способ анализа старения по п.1, в котором металлическое покрытие представляет собой металлическую пленку, осажденную из паровой фазы.3. Способ анализа старения по п.1, в котором полимерный материал представляет собой резиновую смесь для шины.4. Способ анализа старения по п.3, в котором резиновая смесь для шины имеет содержание сажи 50 мас.ч. или менее на 100 мас.ч. каучукового компонента резиновой смеси для шины.5. Способ определения химического состояния, включающий удаление налета с поверхности резинового материала, а затем применение метода анализа поверхности на основе рентгеновского излучения для определения химического состояния на поверхности резинового материала.6. Способ определения химического состояния по п.5, включающий исследование изменения химического состояния, начинающегося с поверхности резинового материала, чтобы определить старение резинового материала.7. Способ определения химического состояния по п.5, в котором налет на поверхности резинового материала удаляют с использованием растворителя.8. Способ определения химического состояния по п.7, в котором растворитель представляет собой органический растворитель.9. Способ определения химического состояния по п.5, в котором налет на поверхности резинового материала удаляют с использованием способа экстракции растворителем. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C08L 9/00 (13) 2013 142 709 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2013142709/05, 20.09.2013 (71) Заявитель(и): Сумитомо Раббер Индастриз, Лтд. (JP) Приоритет(ы): (30) Конвенционный приоритет: (72) Автор(ы): КАНЕКО Фусае (JP), КИШИМОТО Хироюки (JP) 05.10.2012 ...

一种自支撑多材料镀层膜厚标准套件及制备方法

本发明属于现代表面工程领域，提供了一种自支撑多材料镀层膜厚标准套件及制备方法。所述方法通过在若干平面基体的表面分别镀制一种不同靶材的膜层，制备出多种靶材膜层的膜厚标准块，在使用时，把至少一种以上膜厚标准块和金属基体按照预定顺序组合在一起，形成单层或多层膜厚标准套件。本发明与制备单基体多膜层膜厚标准装置块和方法相比，膜层是一个自支撑结构体，与基体相互独立，且便于膜厚层标准块与金属基体可维持自支撑自由组合成多材料多厚度的膜厚标准套件块(片)，减少了镀层膜厚标准块的制备种类和数量，降低了成本，降低了制备难度，使用更加便捷，应用面更广。

Method for measuring the thickness of a layer of oil (oil products) spilled on the water surface

FIELD: measuring equipment. SUBSTANCE: invention relates to radiometry. Method is based on measurements of radiothermal radiations from oil spills on water and from the atmosphere on vertical and horizontal polarizations by a two-channel radiometer at two frequencies and two elevation angles while suspending a radiometer on a support at two altitudes. Measured ratios of differences between the measured values of radiations from the oil spill on water and the atmosphere in the numerator on the vertical polarization, and in the denominator – on the horizontal polarization are determined separately for two frequencies and two elevation angles. In the range of thicknesses from 0 to 12 mm, theoretical ratios of a unit minus the coefficient of reflection of the oil layer on water for radiation in the numerator for vertical polarization, and in the denominator for horizontal polarization are calculated separately for two frequencies and two elevation angles. Four sets of thicknesses, in which the theoretical ratio is equal to the measured ratio corresponding to the angle and frequency, are determined. One value is selected from each set, closest to each other within a given error of thickness, and their average is taken as the measured thickness of the oil spill. EFFECT: technical result is higher accuracy of measuring the thickness of oil spilled on the water surface and an increased thickness measurement range up to 12 mm. 1 cl, 4 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 650 699 C1 (51) МПК G01B 15/02 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК G01B 15/02 (2017.08) (21)(22) Заявка: 2016150968, 26.12.2016 (24) Дата начала отсчета срока действия патента: Дата регистрации: 17.04.2018 Приоритет(ы): (22) Дата подачи заявки: 26.12.2016 (45) Опубликовано: 17.04.2018 Бюл. № 11 2 6 5 0 6 9 9 R U (56) Список документов, цитированных в отчете о поиске: RU 2227897 C2, 27.04.2004. RU 2346266 C1, 10.02.2009. RU ...

Method for analyzing aging and method of determining chemical state

FIELD: physics.SUBSTANCE: method for analyzing the aging of a rubber mixture includes irradiating a rubber composition with a metal coating formed on it with a thickness of 100 Ǻ or less high intensity X-rays having an energy in the range of 4000 eV or less, and measuring the X-ray absorption from absorption spectra for the aging analysis of a rubber compound for a tire.EFFECT: accuracy of the evaluation of the chemical state of the rubber surface during aging increases.8 cl, 10 dwg, 5 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 639 914 C2 (51) МПК G01N 33/44 (2006.01) G01N 23/06 (2006.01) C08L 21/00 (2006.01) B60C 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК G01N 33/445 (2006.01); G01N 23/063 (2006.01); C08L 21/00 (2006.01); B60C 1/00 (2006.01) (21)(22) Заявка: 2013142709, 20.09.2013 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): Сумитомо Раббер Индастриз, Лтд. (JP) Дата регистрации: 25.12.2017 2012081278 A1, 21.06.2012. RU 2305689 C2, 10.09.2007. SU 1516978 A1, 23.10.1989. 05.10.2012 JP 2012-223332; 06.12.2012 JP 2012-267387 (43) Дата публикации заявки: 10.04.2015 Бюл. № 10 (45) Опубликовано: 25.12.2017 Бюл. № 36 2 6 3 9 9 1 4 R U (54) Способ анализа старения и способ определения химического состояния (57) Реферат: Изобретение относится к анализу старения интенсивности, имеющими энергию в диапазоне резиновой смеси для шины, в частности к 4000 эВ или менее, и измерение поглощения ухудшению состояния поверхности полимерного рентгеновских лучей по графикам спектров материала с низкой проводимостью. Способ поглощения для анализа старения резиновой анализа старения резиновой смеси включает смеси для шины. Изобретение позволяет повысить облучение резиновой смеси с образованным на точность оценки химического состояния ней металлическим покрытием толщиной 100 Ǻ поверхности резины при старении. 2 н. и 6 з.п. фили менее рентгеновскими лучами высокой лы, 10 ил., 5 табл. Стр.: 1 ...

Measuring method for reaction ratio of reactive mesogen

반응성 메조겐의 반응률 측정 방법은 주쇄 및 상기 주쇄에 결합된 반응성 메조겐을 포함하는 측쇄를 포함하며, 상기 측쇄의 말단에 불포화 결합을 포함하는 배향 물질을 기판 상에 도포하여 배향막을 제공하는 단계, 상기 배향막에 자외선(UV)을 노광하여 상기 반응성 메조겐을 반응시키는 단계, 상기 배항막 상에 싸이올 기를 포함하는 표지 화합물을 도포하여 미반응 반응성 메조겐과 상기 표지 화합물을 반응시켜 표지 반응성 메조겐을 형성하는 단계, 상기 표지 반응성 메조겐의 양을 검출하는 단계 및 자외선을 노광하기 전 반응성 메조겐의 양과 상기 표지 반응성 메조겐의 양을 비교하여 반응률을 측정하는 단계를 포함한다. 표지 화합물을 이용하여 반응성 메조겐의 양을 검출할 수 있으며, 자외선 노광 공정에 따른 반응성 메조겐의 반응률을 측정할 수 있다. 따라서, 노광량에 따른 반응성 메조겐의 반응률을 측정하여, 노광량을 최적화하여 공정 비용이 감소할 수 있다.

Method and device for real-time inspection of film coatings and surfaces

FIELD: nondestructive inspection of objects. SUBSTANCE: device has X-ray source and recording system both connected to process system. Device is designed for irradiating part under inspection with waves of different lengths simultaneously and its recording system functions to simultaneously and independently record two or more wavelengths. Method involves irradiation of part being inspected with X-ray stream of two wavelengths at the same time recording reflected X-radiation at these wavelengths. In the process film coating is checked for changes in its thickness. Film density and roughness are calculated by adjusting points on theoretical curves to those on experimental curves. EFFECT: provision for in-process acquisition of unbiased data on film coating surface topography and growing layer density. 6 cl, 4 dwg, 1 ex САСУтб с ПЧ сэ РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (19) (51) МПК? ВИ” 2194 272‘ 13) С2 С 01 М 23/20 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 98108172/28, 29.04.1998 (24) Дата начала действия патента: 29.04.1998 (43) Дата публикации заявки: 10.02.2000 (46) Дата публикации: 10.12.2002 (56) Ссылки: МО 98109157 АЛ, 05.03.1998. КУ 2087861 СЛ, 20.08.1997. МКНАШОУ\М 1.2. + а|. Сгуз. Кез. Тесйпо/1., 1995, у. 30, М. 5, р. 643-649. Ц$ 5147982 А, 15.09.1992. (98) Адрес для переписки: 127572, Москва, ул.Череповецкая, 15, кв.58, А.М.Баранову (71) Заявитель: Баранов Александр Михайлович, Кондрашов Павел Евгеньевич, Смирнов Игорь Сергеевич (72) Изобретатель: Баранов А.М., Кондрашов П.Е., Смирнов И.С. (73) Патентообладатель: Баранов Александр Михайлович, Кондрашов Павел Евгеньевич, Смирнов Игорь Сергеевич (54) СПОСОБ КОНТРОЛЯ ПАРАМЕТРОВ ПЛЕНОЧНЫХ ВРЕМЕНИ И УСТРОЙСТВО ЕГО ОСУЩЕСТВЛЕНИЯ (57) Изобретение относится к неразрушающего контроля Устройство СОСТОИТ из источника рентгеновского излучения и системы регистрации, соединенных с технологической системой. Устройство выполнено С ВОЗМОЖНОСТЬЮ облучения образца одновременно ...

Corpuscular-optical system for generating images (versions)

FIELD: information technology. SUBSTANCE: proposed system contains a vacuum system, object table with a test sample, light source, objective and series-arranged dispersion type magnetic deflector (MD), aberration corrector (AC), based on axially symmetric aberration electrostatic mirror, carrier lens unit and projection unit. A compensator of angular energy dispersion (CAED), containing an axially symmetric unit of guide electronic lenses (UGL), is installed after the magnetic deflector. In the first version in the compensator of angular energy dispersion after the unit of guide electronic lenses there is an electrostatic mirror, adjusted in the mode of aberration-free image transfer to the centre of the magnetic deflector with optical magnification coefficient (OMC) equal to 1, with formation of negative feedback on angular energy dispersion. In the second version a second magnetic deflector is installed after the unit of guide electronic lenses, identical to the first. The unit of guide electronic lenses provides for image transfer to the centre of the second magnetic deflector with optical magnification coefficient equal to 1. In the third version a second magnetic deflector is installed after the unit of guide electronic lenses, not identical to the first, and the unit of guide electronic lenses provides for image transfer to the centre of the magnetic deflector with value of optical magnification coefficient equal to the ratio of sines of angle of deflection of optical axes of the first and second magnetic deflectors. EFFECT: increased resolution due to correction of spherochromatic aberration and elimination of causes of quadratic chromatic aberration. 7 cl, 5 dwg, 1 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 362 234 (13) C1 (51) МПК H01J 37/153 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2007136718/28, 03.10.2007 (24) Дата начала отсчета срока действия патента: ...

Radar antenna cover electric thickness detection correction positioning table

本发明属于微波射频与测试测量技术领域，是一种雷达天线罩电厚度检测校正定位台。目前在运动过程中通过联合算法解决喇叭天线法线方向与雷达罩被测点法线方向重合的问题，算法难度较大，精度有偏差，测试稳定度不好。本发明包括雷达天线罩运动机构和喇叭天线机构，雷达天线罩运动机构包括支撑天线罩的旋转台，旋转台能够在横向沿弧线运动，以及在纵向沿弧线运动；所述喇叭天线机构包括固定支撑的喇叭天线，通过控制横向的弧线运动和纵向的弧线运动能够实现喇叭天线的轴线与天线罩表面正交。解决复杂外形雷达天线罩电厚度喇叭天线法线方向与雷达罩被测点法线方向重合；减少了复杂外形雷达天线罩电厚度轴线数，解决了由多轴系统进入的精度误差问题。

The measurement method of microwave humidity sensor inner wall water film thickness based on linear fit

本发明公开了一种基于线性拟合的微波湿度传感器内壁水膜厚度的测量方法，测量方法包括以下步骤：计算没有水膜时，微波测量谐振腔在TE 111 模式下的谐振频率；计算水膜厚度0<h i <＝200μm，0<i<＝N，引起的相应频率偏移；对水膜厚度h i 及其引起的相应频率偏移Δf w‑1,i 进行线性拟合；微波测量谐振腔在TE 111 模式下的谐振频率；计算水膜引起的谐振频率偏移；利用水膜厚度及其引起的频率偏移间的线性关系计算水膜厚度。本发明基于圆柱波导谐振腔TE 111 模式下工作，水膜厚度h i 及其引起的相应频率偏移Δf w‑1,i 呈现线性关系，快速、准确测量湿蒸汽湿度传感器内壁水膜厚度，为消除水膜厚度对湿度测量结果带来的测量误差，提高湿度测量精度，提供了便利条件。

Simultaneous measurement of component ratio and film thickness of two-component alloy film

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

CASPULAR OPTICAL SYSTEM FOR IMAGE FORMATION

1. Корпускулярно-оптическая система формирования изображения, содержащая вакуумную камеру, в которой размещены предметный столик с источником освещения и расположенные по направлению передаваемого изображения объектив, дисперсионный магнитный дефлектор, аберрационный корректор, выполненный на базе электростатического зеркала, блок транспортирующих линз и проекционный блок, отличающаяся тем, что она дополнительно оснащена компенсатором угловой энергетической дисперсии, расположенным между объективом и аберрационным корректором, при этом оптическая ось компенсатора угловой энергетической дисперсии сопряжена через дисперсионный магнитный дефлектор с оптическими осями объектива и аберрационного корректора. ! 2. Корпускулярно-оптическая система по п.1, отличающаяся тем, что компенсатор угловой энергетической дисперсии представляет собой электростатическое безаберрационное зеркало, оптическая ось которого сопряжена через дисперсионный магнитный дефлектор с оптическими осями объектива и аберрационного корректора и настроено в режиме компенсации дисперсии. ! 3. Корпускулярно-оптическая система по п.1, отличающаяся тем, что компенсатор угловой энергетической дисперсии включает компенсирующий магнитный дефлектор, вход которого оптически связан с выходом дисперсионного магнитного дефлектора с помощью блока направляющих электронных линз. ! 4. Корпускулярно-оптическая система по пп.1-3, отличающаяся тем, что дисперсионный магнитный дефлектор выполнен из расчета поворота оптических осей на угол, кратный 72°, с получением пяти выходных оптических каналов для установки электронной пушки в одном из них. ! 5 РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2007 136 718 (13) A (51) МПК H01J 37/153 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21), (22) Заявка: 2007136718/28, 03.10.2007 (43) Дата публикации заявки: 10.04.2009 Бюл. № 10 (72) Автор(ы): Саченко Вячеслав Данилович (RU) R U Адрес для переписки: 197341, Санкт- ...

The support board of coating detection

本发明公开了一种镀层检测用的载物板，它包括一基板，基板的上端面内凹形成一凹槽，凹槽内设有若干间隔设置的横条和竖条，全部的横条和竖条将凹槽的槽内空间沿水平方向分隔成若干子单元，产品置于各子单元内，其特征在于：所述基板上设有一平板，平板覆盖于凹槽的上方，平板设有检测通道，所述基板上设有调节机构；所述基板内设有一气腔，各子单元所对应的槽底位置上分别设有若干气孔，全部气孔均与气腔连通，所述基板上设有用于供给气腔高压空气的进气口。本发明提供一种镀层检测用的载物板，其可以将多个磁片一次性投入检测仪器内，且相邻磁片之间的相对位移小。

Method for measuring film thickness and composition of alloy film

Wafer testing equipment and wafer position adjusting method during electrical testing

一种晶圆测试设备和电性测试时的晶圆位置调整方法，所述晶圆测试设备包括：底座，用于放置晶圆；探针头，用于固定探针卡，使得所述探针卡的探针面朝向所述底座的晶圆放置面；移动模块，与所述底座连接，用于控制所述底座进行升降运动；测厚装置，用于对晶圆厚度进行测量，并根据所述晶圆厚度设定所述底座在进行晶圆测试时的目标位置。所述晶圆测试设备能够自动根据晶圆厚度调整底座目标位置。

Measuring apparatus and micro-tube manufacturing method in the same

It is a technical object of the present invention to provide a measuring device capable of reducing the size of an optical measuring instrument by replacing the optical measuring instrument with another. To this end, the measuring device of the present invention is a measuring device for measuring a microfluid or particles floating thereon, the microtube containing the microfluid; An actuator for exciting the microtube; And a tuning fork that converts the microtube into a current signal when the microtube is excited.

Deposition apparatus and insection method of a layer

본 발명은 기판 상에 막을 증착하는 적어도 하나 이상의 막증착 챔버, 상기 기판을 이송하는 이송 챔버 및 상기 막증착 챔버와 상기 이송 챔버에 연결되며, 표면분석장치를 포함하는 표면분석 챔버를 포함하는 증착 장치에 관한 것이다. 증착 장치

Off-set quantity calibration sample and film thickness measurement device

【課題】２種類の測定機器の位置の校正を行うことができて、校正の作業の手間を省くことができるオフセット量校正試料を提供する。 【解決手段】オフセット量校正試料（７０）は、第１オフセット量検出部（７１）と第２オフセット量検出部（７２）とを備える。第１オフセット量検出部（７１）は、カメラと測定ヘッドとの位置関係を求めるための部分である。第２オフセット量検出部（７２）は、カメラと変位センサとの位置関係を求めるための部分である。 【選択図】図７

Marine oil overflow type, detecting thickness device and detection method based on electromagnetic wave

本发明公开了一种基于电磁波的海上溢油类型、厚度探测装置，包括ARM微处理器、电磁波发生器、电磁波接收器、能量分析模块、波长分析模块、动态分析处理单元、图像采集单元、和信号传输单元，还公开了具体的探测方法，通过向海面发射电磁波，对返回的电磁波强度和波长进行分析，并将其转化为与动态分析处理单元内存储的标准库值单位相应的检测结果，然后将检测结果与动态分析处理单元内存储的标准库值进行比较，用于判定受检区域是海水还是溢油，从而判断溢油是否发生，如果确定发生溢油，确定溢油种类，如水面原油、船用C级油、液压油、润滑油、电动机润滑油、透平油、喷气式飞机油、工艺用油、食用油等，本方法灵敏度高、适应性广。

Method for detecting light resistance layer ion implantation stopping capacity

本发明提供一种检测光阻层离子注入阻挡能力的方法，该检测光阻层离子注入阻挡能力的方法包括：在基板上形成光阻层；测量该基板任意位置上光阻层的第一厚度，该第一厚度为该光阻层的厚度；在该光阻层上注入预设量的离子；测量该任意位置上光阻层的第二厚度，该第二厚度为该光阻层中硬化部分的厚度；根据该第二厚度判断该第一厚度的光阻层的离子注入阻挡能力。本发明在检测光阻层离子注入阻挡能力的过程中不需要使用测试硅片，从而能够减少检测过程所需的成本。

Pearl quality identification method based on spectral analysis

本发明公开了一种基于光谱分析的珍珠品质鉴定方法，包括：步骤一、获取珍珠的最大直径、最小直径和珠层厚度信息，并且根据所述珍珠的最大直径、最小直径和珠层厚度信息确定珍珠的结构属性指数；步骤二、获取珍珠光洁度和光泽度信息，并且根据所述珍珠的光洁度和光泽度信息确定珍珠的外观属性指数；步骤三、根据所述结构属性指数和所述外观属性指数对珍珠品质进行综合评定分级。本发明提供的基于光谱分析的珍珠品质鉴定方法，根据珍珠的结构和外观特征对珍珠品质进行综合评定，能够更加直观、快速的分辨出珍珠品质。