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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2067. Отображено 100.
10-05-2012 дата публикации

Processless Development of Printing Plate

Номер: US20120111214A1
Автор: Howard A. Fromson, William J. Rozell, William J. Ryan
Принадлежит: Anocoil Corp

On-press development of an imaged printing plate on a plate cylinder, in which ink is applied by an ink form roll, a blanket roll is in contact with the plate, a rubber roll is opposed to the blanket roll, and printable media passes between the blanket roll and the rubber roll. The plate comprises a substrate carrying an imaged coating and nonimage areas. The respective cohesive and adhesive properties of the nonimage and image areas to the applied ink, substrate, blanket roll and printable medium, and the ink to the roll are such that the blanket roll pulls the ink from the plate and the ink pulls the nonimage areas from the substrate as undissolved particles that are transferred by the blanket with the ink to the printable media.

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Номер записи: 1
28-06-2012 дата публикации

Substrate processing device and method

Номер: US20120162618A1
Автор: Masaru TOKUMARU, Toshikazu Yamauchi
Принадлежит: Lapis Semiconductor Co Ltd

A semiconductor processing device sprays a liquid chemical agent onto a film on a spinning semiconductor substrate. The spray nozzle is moved horizontally from a first upper position comparatively distant from the substrate to a second upper position closer to the substrate, then vertically downward to a lower position. All of these positions are higher than the substrate and none of them overlie the substrate. The spray nozzle is then moved horizontally to a spray position over the substrate and spraying begins. Any residual liquid chemical agent remaining at the outlet of the spray nozzle from the processing of a previous substrate drops off harmlessly at the end of the downward vertical motion instead of dropping onto the film on the substrate.

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Номер записи: 2
17-01-2013 дата публикации

Developing solution for photoresist on substrate including conductive polymer, and method for forming pattern

Номер: US20130017375A1
Автор: Hiromu Taguchi, Takashi Ihara
Принадлежит: TOAGOSEI CO LTD

A developing solution is disclosed with which it is possible to develop a photoresist disposed on a substrate including a conductive polymer. Also disclosed is a method for forming a resist pattern using the developing solution. The developing solution contains one or more acids and/or salts thereof, the acids being selected from inorganic acids, amino acids having an isoelectric point less than 7, and carboxylic acids having two or more carboxy groups. Use of this developing solution hence inhibits the phenomenon in which a substrate including a conductive polymer suffers an increase in surface resistivity due to a developing solution, and makes it possible to obtain a fine resist pattern.

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Номер записи: 3
21-03-2013 дата публикации

Lithographic apparatus and device manufacturing method

Номер: US20130070219A1
Автор: Bob Streefkerk, Christiaan Alexander Hoogendam, Hans Jansen, Jan-Gerard Cornelis Van Der Toorn, Jeroen Johannes Sophia Maria Mertens, Martinus Hendrikus Antonius Leenders, Michel Riepen, Paulus Martinus Maria Liebregts, Roelof Frederik De Graaf, Sjoerd Nicolaas Lambertus Donders
Принадлежит: ASML Netherlands BV

An immersion lithographic apparatus is provided with a liquid confinement structure which defines at least in part a space configured to contain liquid between the projection system and the substrate. In order to reduce the crossing of the edge of the substrate which is being imaged (which can lead to inclusion of bubbles in the immersion liquid), the cross-sectional area of the space in a plane parallel to the substrate is made as small as possible. The smallest theoretical size is the size of the target portion which is imaged by the projection system. In an embodiment, the shape of a final element of the projection system is also changed to have a similar size and/or shape in a cross-section parallel to the substrate to that of the target portion.

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Номер записи: 4
11-04-2013 дата публикации

RESIST PATTERN FORMATION METHOD AND PATTERN MINIATURIZATION AGENT

Номер: US20130089821A1
Автор: Hirano Isao
Принадлежит: TOKYO OHKA KOGYO CO., LTD.

A resist pattern formation method that includes a step (1) of forming a resist pattern on a support using a chemically amplified positive-type resist composition, a step (2) of applying a pattern miniaturization agent to the resist pattern, a step (3) of performing a bake treatment of the resist pattern to which the pattern miniaturization agent has been applied, and a step (4) of subjecting the resist pattern that has undergone the bake treatment to alkali developing, wherein the pattern miniaturization agent contains an acid generator component, and an organic solvent that does not dissolve the resist pattern formed in the step (1). Also, a pattern miniaturization agent used in the method. 1. A resist pattern formation method comprising:(1) forming a resist pattern on a support using a chemically amplified positive-type resist composition;(2) applying a pattern miniaturization agent to the resist pattern;(3) performing a bake treatment of the resist pattern to which the pattern miniaturization agent has been applied; and(4) subjecting the resist pattern that has undergone the bake treatment to alkali developing, whereinthe pattern miniaturization agent comprises an acid generator component, and an organic solvent that does not dissolve the resist pattern formed in (1).2. The resist pattern formation method according to claim 1 , whereina temperature in the bake treatment of the step (3) is 130° C. or higher, andthe acid generator component comprises a component that generates acid upon heating at 130° C. or higher.3. The resist pattern formation method according to claim 1 ,further comprising between (2) and (3):(5) conducting exposure of the resist pattern to which the pattern miniaturization agent has been applied, whereinthe acid generator component comprises a component that generates acid upon exposure.4. The resist pattern formation method according to claim 1 ,whereinthe organic solvent that does not dissolve the resist pattern formed in (1) is at least one ...

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Номер записи: 5
23-05-2013 дата публикации

Method for Producing a GaNLED Device

Номер: US20130130180A1
Автор: Pham Nga Phuong, Sabuncuoglu Tezcan Deniz, Slabbekoorn John
Принадлежит: IMEC

A method for producing a GaNLED device, wherein a stack of layers comprising at least a GaN layer is texturized, is disclosed. The method involves (i) providing a substrate comprising on its surface said stack of layers, (ii) depositing a resist layer directly on said stack, (iii) positioning a mask above said resist layer, said mask covering one or more first portions of said resist layer and not covering one or more second portions of said resist layer, (iv) exposing said second portions of said resist layer to a light source, (v) removing the mask, and (vi) bringing the resist layer in contact with a developer comprising potassium, wherein said developer removes said resist portions that have been exposed and texturizes the surface of at least the top layer of said stack by wet etching said surface, in the areas situated underneath said resist portions that have been exposed. 1. A method for producing a GaNLED device , the method comprising:providing a substrate comprising on its surface a stack of layers, said stack comprising at least a GaN layer;depositing a resist layer directly on said stack;positioning a mask above said resist layer, said mask covering one or more first portions of said resist layer and not covering one or more second portions of said resist layer;exposing said second portions of said resist layer to a light source;removing the mask; andbringing the resist layer in contact with a developer comprising potassium, wherein said developer removes said resist portions that have been exposed and texturizes the surface of at least the top layer of said stack by wet etching said surface, in the areas situated underneath said resist portions that have been exposed.2. The method according to claim 1 , wherein the stack of layers comprises a GaN layer and a buffer layer claim 1 , said buffer layer comprising an AlN layer on top of a AlGaN layer claim 1 , and wherein the resist layer is deposited directly on said AlN layer claim 1 , so that at least ...

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Номер записи: 6
25-07-2013 дата публикации

SEMICONDUCTOR DEVELOPMENT APPARATUS AND METHOD USING SAME

Номер: US20130186439A1
Автор: CHOI DUG-KYU
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer. The knife edge ring guides the developer and the cleaning solution remaining on the bottom surface of the wafer's edge along an inclined portion formed at an outer side wall of the knife edge ring and causes the developer and the cleaning solution to flow into a plurality of discharge holes. 1. A semiconductor development apparatus comprising:a chuck for supporting a semiconductor wafer;a developer supply unit for supplying developer to a wafer, said developer supply unit positioned a distance above said chuck;a knife edge ring disposed adjacent to a bottom surface of said wafer and at a periphery of said chuck, said knife edge ring having a body and a plurality of discharge holes formed therethrough; anda cleaning solution spraying unit for spraying a cleaning solution toward said bottom surface of said wafer, at least a portion of said spraying unit positioned underneath said body of said knife edge ring,wherein said body of said knife edge ring comprises an inner side wall, an outer side wall, a top surface, a bottom surface, and a multi-stage inclined portion formed at said outer side wall and inclined from the top surface towards the bottom surface, andwherein each one of the plurality of discharge ...

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Номер записи: 7
01-08-2013 дата публикации

Developing method

Номер: US20130194557A1
Автор: Kousuke Yoshihara, Taro Yamamoto, Yuichi Yoshida
Принадлежит: Tokyo Electron Ltd

A method of developing a substrate including rotating the substrate and supplying a developing liquid from a discharge port of a developer nozzle onto the surface of the substrate, while moving the developer nozzle, disposed above the substrate, from a central portion towards a peripheral portion of the substrate, and supplying a first rinse liquid from a discharge port of a first rinse nozzle onto the surface of the substrate, while moving the first rinse nozzle, disposed above the substrate, from the central portion towards the peripheral portion of the substrate. The supplying of the developing liquid and the first rinse liquid are performed concurrently, with the first rinse nozzle being maintained nearer to a center of the substrate than the developer nozzle.

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Номер записи: 8
10-10-2013 дата публикации

TRANSPARENT CONDUCTIVE FILMS, ARTICLES, AND METHODS

Номер: US20130266898A1
Автор: Whitcomb David R.
Принадлежит:

Transparent conductive films, articles made from them, and methods of making them are disclosed. Some transparent conductive films include flexible glass substrates and conductive layers containing metal nanoparticles. Others include at least one layer with cell walls that contain metal nanorods or conductive nanowires. Still others include a substrate with a coating disposed on it, with the coating including conductive components and photopolymers. Such films are useful in such articles as electronic displays, touch screens, and the like. 1. A transparent conductive film comprising a substrate and at least one layer disposed on the substrate , the at least one layer comprising conductive components and at least one photopolymer composition.2. The transparent conductive film according to claim 1 , wherein the conductive components comprise carbon nanotubes or metal nanoparticles.3. The transparent conductive film according to claim 2 , wherein the metal nanoparticles comprise metal nanowires claim 2 , metal nanocubes claim 2 , metal nanorods claim 2 , metal nanopyramids claim 2 , or metal nanotubes.4. The transparent conductive film according to claim 2 , wherein the metal nanoparticles comprise metal nanowires.5. The transparent conductive film according to claim 4 , wherein the metal nanowires comprise silver nanowires.6. The transparent conductive film according to claim 1 , wherein the at least one photopolymer composition is water developable.7. The transparent conductive film according to claim 1 , wherein the at least one layer is a conductive layer.8. The transparent conductive film according to claim 1 , wherein the substrate is a flexible glass substrate.9. The transparent conductive film according to claim 8 , wherein the flexible glass substrate has at least one of the following: (1) an average thickness less than about 500 μm claim 8 , (2) an average thickness greater than about 10 μm and less than about 100 μm claim 8 , (3) can achieve a radius of ...

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Номер записи: 9
07-11-2013 дата публикации

MOVABLE BODY APPARATUS, MOVABLE BODY DRIVE METHOD, EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD

Номер: US20130293863A1
Автор: Shibazaki Yuichi
Принадлежит:

A drive system drives a movable body, based on measurement results of a first measurement system which measures the position of the movable body in an XY plane by irradiating a measurement beam from an arm member on a grating placed on a surface parallel to the XY plane of the movable body and measurement results of a second measurement system which measures a variance of the arm member using a laser interferometer. In this case, the drive system corrects measurement errors caused due to a variance of the arm member included in the measurement results of the first measurement system, using the measurement results of the second measurement system. 1. An exposure apparatus that exposes a substrate with illumination light via a projection optical system , the apparatus comprising:a base member placed under the projection optical system and having a surface placed substantially parallel to a predetermined plane orthogonal to an optical axis of the projection optical system;a substrate stage that is placed above the base member and holds the substrate, the substrate stage having a holding member and a main body section, the holding member having a mounting area of the substrate provided on an upper surface side and a measurement surface having a grating provided on a lower surface side, and the main body section supporting the holding member so that a space is formed between the measurement surface and the surface of the base member;a drive system having an electromagnetic motor that drives the substrate stage;a first measurement system that has a head section placed lower than the measurement surface under the projection optical system, and measures positional information of the substrate stage by irradiating the measurement surface with a measurement beam from below via the head section that is placed in the space as the substrate stage is positioned facing the projection optical system;a second measurement system that is different from the first measurement system and ...

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Номер записи: 10
02-01-2014 дата публикации

Photopatterning

Номер: US20140004320A1
Автор: Bentley Philip Gareth, Thomas David Stephen
Принадлежит: CONDUCTIVE INKJET TECHNOLOGY LIMITED

A photopatternable structure () comprises an optically transparent substrate () having first and second faces (), coated respectively with first and second photosensitive materials (), the coated substrate being opaque to electromagnetic radiation of one or more wavelengths to which the photosensitive materials are sensitive. In use, the faces () are exposed (sequentially or simultaneously) to curing radiation to which the photosensitive materials are sensitive and to which the coated substrate is opaque, resulting in two sided photopatterning without through -cure occurring. 1. A photopatternable structure , comprising an optically transparent substrate having first and second faces , a coating of a first photosensitive material of the substrate on the first face and a coating of a second photosensitive material on the second face of the substrate , the coated substrate being opaque to electromagnetic radiation of one or more wavelengths to which the first and second photosensitive materials are sensitive.2. A structure according to claim 1 , wherein the substrate is planar claim 1 , with the first and second faces opposed to each other.3. A structure according to claim 1 , wherein the first and second photosensitive materials are the same.4. A structure according to claim 1 , further comprising a surface coating on one or both of the coatings of photosensitive material.5. A structure according to claim 4 , wherein the surface coating is soluble in developing medium suitable for use in removing the photosensitive material claim 4 , after curing.6. A structure according to wherein the photosensitive material comprises a catalyst for electroless plating.7. A structure according to claim 1 , wherein the substrate comprises polarising material.8. A method of photopatterning a photopatternable structure in accordance with claim 1 , comprising exposing the first and second photosensitive materials to curing radiation to which the photosensitive materials are sensitive ...

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Номер записи: 11
13-02-2014 дата публикации

Color Film Developing Apparatus

Номер: US20140044429A1
Автор: Liwei Hu
Принадлежит: Shenzhen China Star Optoelectronics Technology Co Ltd

The present invention provides a color film developing apparatus, which is used to uniformly develop photoresist on the surface of a substrate as manufacturing a liquid crystal panel, comprising a developing chamber. The developing chamber comprises a first developing chamber and a second developing chamber respectively set inclined to a horizontal plane; the inclined directions of the first developing chamber and the second developing chamber inclined to the horizontal plane are contrary to each other. The color film developing apparatus according to the present invention can avoid the secondary development of the photoresist on the inclined substrate caused by the developer flowing from top to bottom when the substrate passes the developing chamber and proceeds to develop; enhance the uniformity of the development of the substrate; improve the uniformity of the in-plane process; narrow the differences; improve the quality of the product.

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Номер записи: 12
13-03-2014 дата публикации

DEVELOPING TREATMENT APPARATUS AND DEVELOPING TREATMENT METHOD

Номер: US20140071411A1
Автор: Fukuda Masahiro, IKEDA Yoshinori, Okamoto Yoshiki, TAKIGUCHI Yasushi, Yamamoto Taro, YOSHIMURA Koki
Принадлежит: TOKYO ELECTRON LIMITED

The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained. 1. A developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure , the developing treatment apparatus comprising:a substrate holding part that horizontally holds the substrate;a rotary drive mechanism that rotates the substrate holding part around a vertical axis;a positive developing solution supply nozzle that supplies a developing solution for the positive resist to the front surface of the substrate held by the substrate holding part;a negative developing solution supply nozzle that supplies a developing solution for the negative resist to the front surface of the substrate held by the substrate holding part;a cup body that is formed in a bottomed circular shape with an upper side open and collects the developing solution scattering with rotation of the substrate;a first developing solution drain pipeline that is connected to an outer peripheral side of the cup body and drains one of the developing solutions for the positive resist and the negative resist collected by the cup body;a second developing solution drain pipeline that is connected to an inner peripheral side of ...

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Номер записи: 13
01-01-2015 дата публикации

Wiring board and method of manufacturing the same

Номер: US20150000968A1
Автор: Hirofumi Ishibashi, Masanori Tada
Принадлежит: Kyocera SLC Technologies Corp

In a wiring board, on an insulating layer of an outermost layer, there are provided a plurality of strip-shaped wiring conductors which are partially provided with semiconductor element connection pads to which electrode terminals of a semiconductor element are connected, at positions which prevent the semiconductor element connection pads adjacent to each other from being laterally arranged, and a solder resist layer having openings for individually exposing the semiconductor element connection pads is adhered on the insulating board as the outermost layer and on the strip-shaped wiring conductors, wherein the solder resist layer internally contains an insulating filler, and the insulating filler is sunk below the upper surfaces of the strip-shaped wiring conductors.

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Номер записи: 14
15-01-2015 дата публикации

TOUCH PANEL AND METHOD OF MANUFACTURING THE SAME

Номер: US20150015801A1
Автор: Hong Sang Su, Jang In Hyun, Kim Jae Hun
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a touch panel including: a transparent substrate divided into an active region and a non-active area that is a boundary of the active region; and a bezel portion formed in the non-active region of one surface of the transparent substrate, wherein the bezel portion is formed by exposing and developing a silver halide emulsion layer, thereby reducing a step difference of the bezel portion. 1. A touch panel comprising:a transparent substrate divided into an active region and a non-active area that is a boundary of the active region; anda bezel portion formed in the non-active region of one surface of the transparent substrate,wherein the bezel portion is formed by exposing and developing a silver halide emulsion layer.2. The touch panel as set forth in claim 1 , wherein the bezel portion includes gentle inclined surfaces at both sides in a width direction.3. The touch panel as set forth in claim 1 , wherein a silver halide included in the silver halide emulsion layer is an inorganic silver halide.4. The touch panel as set forth in claim 1 , further comprising: an overcoat layer formed in the transparent substrate to cover the bezel portion.5. The touch panel as set forth in claim 4 , wherein the overcoat layer is formed of an insulation material.6. The touch panel as set forth in claim 1 , wherein the transparent substrate is a window glass.7. A method of manufacturing a touch panel claim 1 , the method comprising:(A) preparing a transparent substrate;(B) applying a silver halide emulsion layer to the transparent substrate; and(C) forming a bezel portion in a non-active region of one surface of the transparent substrate by exposing and developing the silver halide emulsion layer.8. The method as set forth in claim 7 , further comprising: forming an overcoat layer in the transparent substrate to cover the silver halide emulsion layer claim 7 , after step (B).9. The method as set forth in claim 8 , wherein the overcoat layer is formed of an insulation ...

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Номер записи: 15
03-02-2022 дата публикации

METHODS TO FABRICATE 2D WEDGE AND LOCALIZED ENCAPSULATION FOR DIFFRACTIVE OPTICS

Номер: US20220035251A1
Автор: Godet Ludovic, Guo Jinrui, HOURANI Rami, Luo Kang, Zhang Daihua
Принадлежит:

A method of forming a three dimensional feature inwardly of a surface of a material includes providing a droplet dispenser including an outlet configured to dispense discrete droplets of a liquid material having a reactant therein capable of reacting with, and thereby removing, portions of the material layer with which the droplets come into contact, providing a support configured support the material thereon, the support, and the droplet dispenser, movable with respect to one another, such that the outlet of the droplet dispenser is positionable over different discrete areas of the surface of the material, and positioning the surface of the material under the droplet dispenser, and dispensing droplets to discrete portions of the surface of the material in a desired area thereof, to remove at least a portion of the material in the desired area and thereby form a three dimensional recess inwardly of the surface of the material. 1. A method of forming a three dimensional feature inwardly of a surface of a material , comprising:providing a droplet dispenser including an outlet configured to dispense discrete droplets of a liquid material having a reactant therein capable of reacting with, and thereby removing, portions of the material layer with which the droplets come into contact;providing a support configured support the material thereon, the support, and the droplet dispenser, movable with respect to one another, such that the outlet of the droplet dispenser is positionable over different discrete areas of the surface of the material; andpositioning the surface of the material under the droplet dispenser, and dispensing droplets to discrete portions of the surface of the material in a desired area thereof, to remove at least a portion of the material in the desired area and thereby form a three dimensional recess inwardly of the surface of the material.2. The method of claim 1 , further comprising dispensing different amounts of droplets of the liquid material to ...

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Номер записи: 16
22-01-2015 дата публикации

NEGATIVE PHOTORESIST COMPOSITION AND PATTERNING METHOD FOR DEVICE

Номер: US20150024327A1
Автор: KIM Kyung-Jun, KIM Yu-na, PARK Chan-Hyo
Принадлежит: LG CHEM, LTD.

The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent. 116-. (canceled)17. A patterning method for device using a lift-off process , comprising:applying a negative photoresist composition on a substrate;exposing a defined region of the applied composition;developing the composition of unexposed portions to form a photoresist pattern with a reverse taper profile;forming a target thin film on the photoresist pattern and the substrate; andremoving the photoresist pattern,wherein the negative photoresist composition comprises:an alkali-soluble binder resin;a halogen-containing first photo-acid generator;a triazine-based second photo-acid generator;a cross-linking agent having an alkoxy structure; anda solvent.18. The patterning method for device as claimed in claim 17 , further comprising:performing a prebake process and/or a post exposure bake process.19. The patterning method for device as claimed in claim 18 , wherein the prebake process is performed at 80 to 120° C. claim 18 , the post exposure bake process being performed at 90 to 150° C. claim 18 , preferably about 90 to 110° C.20. The patterning method for device as claimed in claim 17 , wherein the photoresist pattern formed after development has an angle between the substrate and the sidewall thereof in the range of at least 55° and less than 90°.21. The patterning method for device as claimed in claim 17 , wherein the exposure is performed using a light source having a wavelength of 365 to ...

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Номер записи: 17
28-01-2016 дата публикации

DEVELOPING APPARATUS

Номер: US20160026086A1
Автор: Fukuda Masahiro, Yamamoto Taro
Принадлежит:

A developing apparatus includes a first cup module and a second cup module arranged to be spaced apart from each other in a transverse direction; a first developing solution nozzle configured to wait in a standby position between the first cup module and the second cup module; and a first moving mechanism configured to move the first developing solution nozzle between the standby position and a processing position in which the developing solution is supplied to the substrate, wherein the first developing solution nozzle includes an ejection hole configured to eject the developing solution to form a liquid puddle on a surface of the substrate, the first developing solution nozzle includes a contact portion formed smaller than the surface of the substrate and installed to face the surface of the substrate, and the first developing solution nozzle spreads the liquid puddle on the substrate. 1. A developing apparatus which is provided with a cup module including a substrate holding part configured to be rotated by a rotating mechanism and a liquid receiving cup surrounding the substrate holding part , and which performs development by supplying a developing solution to a substrate held on the substrate holding part , the apparatus comprising:a first cup module and a second cup module spaced apart from each other in a transverse direction;a first developing solution nozzle configured to wait in a standby position between the first cup module and the second cup module; anda first moving mechanism configured to move the first developing solution nozzle between the standby position and a processing position in which the developing solution is supplied to the substrate,wherein the first developing solution nozzle includes an ejection hole configured to eject the developing solution to form a liquid puddle on a surface of the substrate, the first developing solution nozzle including a contact portion that is smaller than the surface of the substrate and faces the surface of ...

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Номер записи: 18
29-01-2015 дата публикации

TOUCH PANEL, CONDUCTIVE FILM AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150029411A1
Автор: KUO YI-PENG
Принадлежит: HENGHAO TECHNOLOGY CO. LTD

A touch panel, conductive film and the method for manufacturing the same are disclosed. The conductive film may be disposed at a substrate to act as a touch sensing area. In particular, the conductive film may be formed by a method including the following steps: providing a substrate; uniformly mixing nano conductive metal with positive or negative sensitive material to form a mixture; coating the mixture over the substrate to form a wet film on the substrate; and patterning the wet film by an exposure process and a development process to form the conductive film. 1. A conductive film , disposed on a substrate to act as a touch sensing area , wherein nano conductive metal is evenly distributed over a positive or a negative sensitive material to form a mixture , and then the mixture is coated over the substrate to form a wet film , and then the wet film is patterned by means of an exposure process and a development process to form the conductive film.2. The conductive film of claim 1 , wherein the nano conductive metal is nano silver.3. The conductive film of claim 2 , wherein the sensitive material is a photoresist.4. The conductive film of claim 3 , wherein the sensitive material is liquid state or colloidal state.5. The conductive film of claim 3 , wherein the conductive film is applied to a touch panel or a touchpad.6. The conductive film of claim 3 , wherein the line width of the conductive film is less than 10 um.7. The conductive film of claim 3 , wherein the thickness of the wet film is less than 1 um.8. The conductive film of claim 3 , wherein when the thickness of the conductive film is less than 1 um claim 3 , the conductive film achieves gray level.9. A method for manufacturing a conductive film claim 3 , comprising the following steps:providing a substrate;evenly distributing nano conductive metal over a positive or a negative sensitive material to form a mixture;coating the mixture over the substrate to form a wet film; andpatterning the wet film by an ...

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Номер записи: 19
29-01-2015 дата публикации

RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS

Номер: US20150030983A1
Автор: Hatakeyama Jun, KIM Hyun-woo
Принадлежит:

A resist top coat composition includes a polymer including a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group and a repeating unit q of acenaphthylene having chemical formula 1. R is hydrogen, hydroxyl. Ris hydrogen, hydroxyl, linear or branched C1-C10-alkyl, cycloalkyl, acyloxy, alkoxycarbonyl, carboxyl, —OC(═O)R. Ris linear or branched C1-C10-alkyl, cycloalkyl or fluorinated alkyl. m is 1 or 2. p and q are positive numbers satisfying the expressions 0 Подробнее

Номер записи: 20
04-02-2016 дата публикации

METHOD FOR PRODUCING A PLANOGRAPHIC PRINTING PLATE

Номер: US20160033868A1
Автор: AOSHIMA Norio
Принадлежит: FUJIFILM Corporation

Provided is a method of producing a planographic printing plate, including: subjecting a planographic printing plate precursor, which has a support and a positive-working image recording layer, to image-wise exposure; and developing it using an alkaline aqueous solution which contains a specific compound and has a pH of from 8.5 to 10.8, in this order. The recording layer has: a lower layer containing a water-insoluble and alkali-soluble resin and an infrared ray absorbing agent; and an upper layer containing a water-insoluble and alkali-soluble polyurethane resin and a polyorganosiloxane. The specific compound is a nonionic or anionic surfactant, or at least one compound represented by Formula (1) or (2), wherein R, R, and Reach represent an alkyl group; Rrepresents an alkylene group; and Rrepresents a single bond or a divalent linking group containing a hetero atom; and R, R, and Reach represent an alkyl group. 1. A method of making a planographic printing plate , comprising , in the following order:subjecting a planographic printing plate precursor, which comprises a support and a positive-working image recording layer provided on the support, to image-wise exposure, the positive-working image recording layer comprising: a lower layer comprising a (A) water-insoluble and alkali-soluble resin and an (B) an infrared ray absorbing agent; and an upper layer comprising a (C) water-insoluble and alkali-soluble polyurethane resin and a (D) polyorganosiloxane; anddeveloping the planographic printing plate precursor using an alkaline aqueous solution which comprises a nonionic surfactant and has a pH of from 8.5 to 10.82. The method of making a planographic printing plate according to claim 1 , wherein the (A) water-insoluble and alkali-soluble resin comprises a resin having at least one group selected from the group consisting of a phenolic hydroxyl group claim 1 , a carboxyl group claim 1 , sulfonic acid group claim 1 , a phosphoric acid group claim 1 , a sulfonamide ...

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Номер записи: 21
05-02-2015 дата публикации

DEVELOPING METHOD, DEVELOPING APPARATUS AND STORAGE MEDIUM

Номер: US20150036109A1
Автор: Fukuda Masahiro, KYOUDA Hideharu, MUTA Koshi, TAKIGUCHI Yasushi, Yamamoto Taro, Yoshihara Kousuke
Принадлежит:

A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer. 1. A developing method comprising:horizontally holding an exposed substrate by a substrate holder;forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle;rotating the substrate;spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate;bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate.2. The developing method according to claim 1 , whereinthe spreading of the liquid puddle on the whole surface of the substrate includes generating a turning flow ...

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Номер записи: 22
05-02-2015 дата публикации

DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM

Номер: US20150036110A1
Автор: KYOUDA Hideharu, MUTA Koshi, TAKIGUCHI Yasushi, Yamamoto Taro, Yoshihara Kousuke
Принадлежит:

A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.

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Номер записи: 23
01-05-2014 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20140120477A1
Автор: ASANO Toru, KANAOKA Masashi, KANEYAMA Koji, Mitsuhashi Tsuyoshi, Miyagi Tadashi, Okumura Tsuyoshi, Shigemori Kazuhito, Taguchi Takashi, Toriyama Yukio, YASUDA Shuichi
Принадлежит:

A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes forming a photosensitive film on the substrate by said first processing unit before exposure processing by said exposure device and applying washing processing to the substrate by supplying a washing liquid to the substrate in said second processing unit after the formation of said photosensitive film and before the exposure processing. The method also includes applying drying processing to the substrate in said second processing unit after the washing processing by said second processing unit and before the exposure processing and applying development processing to the substrate by said third processing unit after the exposure processing. Applying the drying processing to the substrate includes the step of supplying an inert gas onto the substrate, to which the washing liquid is supplied. 1. A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device that applies exposure processing to a substrate by a liquid immersion method , and includes first , second and third processing units , the method comprising the steps of:forming a photosensitive film made of a photosensitive material on an upper surface of the substrate by the first processing unit before the exposure processing by the exposure device;rotating the substrate about an axis vertical to the substrate while holding the substrate substantially horizontally in the second processing unit after the formation of the photosensitive film by the first processing unit and before the exposure processing by the exposure device;forming a liquid layer of a rinse liquid on a whole upper surface of the photosensitive film on the rotated substrate, to previously allow part of a component of the photosensitive material of the photosensitive film to be eluted in the liquid layer in the ...

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Номер записи: 24
12-02-2015 дата публикации

LIGHT DIFFUSING MEMBER, METHOD FOR MANUFACTURING SAME AND DISPLAY DEVICE

Номер: US20150042934A1
Автор: Kanno Toru, Maeda Tsuyoshi, Yamamoto Emi
Принадлежит:

A viewing angle extending film (a light diffusing member) includes a base material with optical transparency, a plurality of light-shielding layers dotted on one surface of the base material, and a transparent resin layer (optically transparent material layer) provided on the one surface of the base material. At least a light-shielding layer, which is part of the plurality of light-shielding layers, has a planar shape surrounded by a first figure and a second figure contained in the first figure or a planar shape surrounded by at least part of the first figure and at least part of the second figure overlaid with the first figure. Hollow portions are provided in a formation region of the light-shielding layers, each hollow portion being shaped so that a cross-sectional area obtained by cutting along a plane parallel to the one surface of the base material is large on the light-shielding layer side and is gradually decreased as being away from the light-shielding layer. A part other than the hollow portions is taken as a light transmitting portion. 1. A light diffusing member comprising: a base material with optical transparency; a plurality of light-shielding layers dotted on one surface of the base material; and an optically transparent material layer provided on the one surface of the base material and thicker than the light-shielding layers;wherein at least a light-shielding layer, which is part of the plurality of light-shielding layers, has a planar shape surrounded by a first figure and a second figure contained in the first figure or a planar shape surrounded by at least part of the first figure and at least part of the second figure arranged so as to be partially overlaid with the first figure, when viewed in a direction of a normal to the one surface of the base material,hollow portions are provided in a formation region of the light-shielding layers, each hollow portion being shaped so that a cross-sectional area obtained by cutting along a plane parallel ...

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Номер записи: 25
12-02-2015 дата публикации

DRAWING DATA GENERATING METHOD, PROCESSING APPARATUS, STORAGE MEDIUM, DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE

Номер: US20150044615A1
Автор: OZAWA Kimitaka, SETO Isamu
Принадлежит:

A method generates drawing data for performing drawing on a substrate with a plurality of charged particle beams based on pattern data representing a pattern to be drawn on the substrate. The method includes: a grouping step of grouping the plurality of charged particle beams into a plurality of groups based on a displacement amount of an irradiation position of each of the plurality of charged particle beams from target position thereof; and a generating step of generating the drawing data by changing the pattern data with respect to each of the plurality of groups based on the displacement amount of each of the plurality of charged particle beams. 1. A method of generating drawing data for performing drawing on a substrate with a plurality of charged particle beams based on pattern data representing a pattern to be drawn on the substrate , the method comprising:a grouping step of grouping the plurality of charged particle beams into a plurality of groups based on a displacement amount of an irradiation position of each of the plurality of charged particle beams from a target position thereof; anda generating step of generating the drawing data by changing the pattern data with respect to each of the plurality of groups based on the displacement amount of each of the plurality of charged particle beams.2. The method according to claim 1 , wherein the generating step changes the pattern data based on an average value of a plurality of the displacement amount with respect to each of the plurality of groups.3. The method according to claim 1 , wherein the grouping step groups the plurality of charged particle beams into the plurality of groups based on a target drawing precision.4. The method according to claim 1 , wherein number of groups constituting the plurality of groups is not greater than half of number of charged particle beams constituting the plurality of charged particle beams.5. A processing apparatus for generating drawing data for performing drawing on a ...

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Номер записи: 26
12-02-2015 дата публикации

METHOD FOR FORMING RESIST PATTERN

Номер: US20150044617A1
Автор: Ishikawa Kiyoshi, Sugawara Mai
Принадлежит:

A method of forming a resist pattern, and a film including a metal-containing compound formed on the resist pattern while developing the resist pattern. The method uses an organic solvent developer liquid, in which a metal compound capable of generating a hydroxyl group upon hydrolysis is dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. 1. A method for forming a resist pattern , the method comprising:forming a coating film by applying, on a substrate, a photo resist composition;site-selectively exposing the coating film; andforming a film comprising a metal-containing compound on the resist pattern while developing the resist pattern by dissolving a non-pattern part in the light exposed coating film in an organic solvent developer liquid;wherein the organic solvent developer liquid includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, which is dissolved in an organic solvent (S), andthe organic solvent (S) does not have a functional group that reacts with the metal compound (W).2. The method for forming the resist pattern according to claim 1 , wherein the metal compound (W) is a silicon compound having two or more of isocyanate groups bound to a silicon atom.3. The method for forming the resist pattern according to claim 1 , wherein a value of Log P of the organic solvent (S) is 3.5 or less.4. The method for forming the resist pattern according to claim 1 , wherein the organic solvent (S) includes one or more hetero atoms selected from the group consisting of N claim 1 , O claim 1 , S claim 1 , and P. This application claims priority to Japanese Patent Application No. 2013-163471, filed Aug. 6, 2013, the content of which is incorporated herein by reference.1. Field of the InventionThe present invention relates to an organic solvent developer liquid and a method for forming a resist pattern using the organic developer liquid.2. Related ArtMethods for forming fine patterns by ...

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Номер записи: 27
16-02-2017 дата публикации

DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM

Номер: US20170045821A1
Автор: KYOUDA Hideharu, MUTA Koshi, TAKIGUCHI Yasushi, Yamamoto Taro, Yoshihara Kousuke
Принадлежит: TOKYO ELECTRON LIMITED

A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer. 1. A developing method comprising:holding a substrate horizontally by a substrate holder;supplying a developer from a developer nozzle to the substrate thereby forming thereon a liquid puddle;generating a turning flow in the liquid puddle to stir the liquid puddle; andmoving a position where the turning flow was generated.2. The developing method according to claim 1 , wherein the moving of the position where the turning flow was generated is performed while rotating the substrate holder.3. The developing method according to claim 2 , wherein a turning direction of the turning flow is opposite to a rotating direction of the substrate.4. The developing method according to claim 1 , wherein the turning flow is generated while supplying the developer from the developer nozzle to the substrate and forming the liquid puddle of the developer.5. The developing method according to claim 1 , wherein the turning flow is generated by rotating the rotary member along the surface of the substrate while the rotary member is being in contact with the liquid puddle.6. The developing method according to claim 1 , wherein the rotary member has a surface portion that rotates along the surface of the substrate while the surface portion is opposing the substrate.7. The developing method ...

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Номер записи: 28
15-02-2018 дата публикации

PROCESSING LIQUID SUPPLYING APPARATUS AND METHOD OF CONTROLLING PROCESSING LIQUID SUPPLYING APPARATUS

Номер: US20180046083A1
Автор: KASHIYAMA Masahito
Принадлежит:

Provided downstream of an on-off valve are a needle and a diaphragm that cooperates with the needle. The needle is driven by a motor. A controller causes the motor to move the diaphragm cooperating with the needle for increasing a volume of a flow path downstream of the on-off valve. Accordingly, this allows suck back, leading to prevention of drips of the processing liquid. In addition, the controller causes the motor to move the needle for regulating the flow rate of the processing liquid when the on-off valve is opened. This facilitates flow regulation of the processing liquid by the motor which is current1y made by the operator's sense. Moreover, since prevention of the drips of the processing liquid as well as the flow regulation of the processing liquid are performable with the same motor, a needless configuration is omittable to achieve space saving. 1. A processing liquid supplying apparatus , comprising:a processing liquid flow path that passes a processing liquid;an on-off valve that opens/closes the processing liquid flow path;a valve element disposed downstream of the on-off valve for adjusting an aperture of the processing liquid flow path;a volume variation unit disposed downstream of the on-off valve for cooperating with the valve element to vary a volume of a downstream processing liquid flow path disposed downstream of the on-off valve;a valve element drive unit that drives the valve element; anda controller that causes the valve element drive unit to move the volume variation unit cooperating with the valve element for increasing the volume of the downstream processing liquid flow path when the on-off valve closes the processing liquid flow path, and causes the valve element drive unit to move the valve element for regulating a flow rate of the processing liquid when the on-off valve opens the processing liquid flow path.2. The processing liquid supplying apparatus according to claim 1 , wherein the valve element drive unit is a motor.3. The ...

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Номер записи: 29
19-02-2015 дата публикации

DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF

Номер: US20150050601A1
Автор: Chen Kuang-Jung, Holmes Steven J., Huang Wu-Song, Kwong Ranee W., Liu Sen
Принадлежит:

The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels. 1. A method of forming a patterned material structure on a substrate , the method comprising:providing a substrate with a layer of the material;applying a BARC composition to the substrate to form a BARC layer over the material layer, the BARC composition comprising: a first polymer comprising a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety which absorbs light at a wavelength selected from a range from 100 nm to 400 nm; a second polymer comprising a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety which absorbs light at a wavelength selected from a range from 100 nm to 400 nm; a crosslinking agent; and a radiation sensitive acid generator;forming a photoresist layer over the BARC layer;patternwise exposing the photoresist layer to radiation; anddeveloping the substrate with a developer, whereby unexposed portions of the photoresist layer and the BARC layer are selectively removed by the developer to form a ...

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Номер записи: 30
25-02-2016 дата публикации

METHOD FOR PRODUCING A PLANOGRAPHIC PRINTING PLATE

Номер: US20160054654A1
Автор: AOSHIMA Norio
Принадлежит: FUJIFILM Corporation

Provided is a method of producing a planographic printing plate, including: subjecting a planographic printing plate precursor, which has a support and a positive-working image recording layer, to image-wise exposure; and developing it using an alkaline aqueous solution which contains a specific compound and has a pH of from 8.5 to 10.8, in this order. The recording layer has: a lower layer containing a water-insoluble and alkali-soluble resin and an infrared ray absorbing agent; and an upper layer containing a water-insoluble and alkali-soluble polyurethane resin and a polyorganosiloxane. The specific compound is a nonionic or anionic surfactant, or at least one compound represented by Formula (1) or (2), wherein R, R, and Reach represent an alkyl group; Rrepresents an alkylene group; and Rrepresents a single bond or a divalent linking group containing a hetero atom; and R, R, and Reach represent an alkyl group. 1. A method of making a planographic printing plate , comprising , in the following order:subjecting a planographic printing plate precursor, which comprises a support and a positive-working image recording layer provided on the support, to image-wise exposure; anddeveloping the planographic printing plate precursor using an alkaline aqueous solution which comprises an anionic surfactant and has a pH of from 8.5 to 10.8,the recording layer comprising: a lower layer comprising a (A) water-insoluble and alkali-soluble resin and an (B) infrared ray absorbing agent; and an upper layer comprising a (C) water-insoluble and alkali-soluble polyurethane resin and a (D) polyorganosiloxane.2. The method of making a planographic printing plate according to claim 1 , wherein the (A) water-insoluble and alkali-soluble resin comprises a resin having at least one group selected from the group consisting of a phenolic hydroxyl group claim 1 , a carboxyl group claim 1 , sulfonic acid group claim 1 , a phosphoric acid group claim 1 , a sulfonamide group claim 1 , and an ...

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Номер записи: 31
26-02-2015 дата публикации

ORGANOMETALLIC SOLUTION BASED HIGH RESOLUTION PATTERNING COMPOSITIONS

Номер: US20150056542A1
Автор: Anderson Jeremy, Grenville Andrew, JIANG Kai, Keszler Douglas A., Meyers Stephen T.
Принадлежит:

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds. 1. A method for patterning a substrate with radiation , the method comprising:irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating, wherein the coated substrate comprises a coating that comprises a metal oxo-hydroxo network with organic ligands with a metal carbon bonds and/or with metal carboxylate bonds; andselectively developing the irradiated structure to remove a substantial portion of the irradiated coating or of the un-irradiated coating to form a patterned substrate.2. The method of wherein the irradiated structure has irradiated coating that is soluble in aqueous base and non-irradiated coating soluble in organic solvents such that the irradiated structure can be alternatively subjected to positive tone imaging or negative tone imaging.3. The method of wherein the development is performed with an organic solvent to remove the non-irradiated coating.4. The method of wherein the selective development is performed with an aqueous base.5. The method of wherein the irradiation is performed with an electron beam claim 1 , ultraviolet light claim 1 , extreme ultraviolet light claim 1 , irradiation from an ArF laser claim 1 , ...

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Номер записи: 32
10-03-2022 дата публикации

Developing Device and Developing Method

Номер: US20220075278A1
Автор: Dong Peng
Принадлежит:

The developing device comprises: a development chamber that is provided with an air extraction pipeline for extracting air inside the development chamber to outside the development chamber; a carrier that is disposed in the development chamber for supporting a wafer; a plurality of temperature sensors that are disposed on the carrier for detecting temperatures of a plurality of target regions; a plurality of mutually independent air supply pipelines for supplying air to the development chamber, each of the target regions corresponding to at least one air supply pipeline; and a control unit for acquiring measured temperatures of the temperature sensors and calculating current temperatures of the corresponding target regions, and basing on the current temperatures of the target regions to adjust air parameters of the corresponding air supply pipelines, so that the temperatures of the corresponding target regions rest within a preset temperature range. 1. A developing device , characterized in comprising:a development chamber, provided with an air extraction pipeline for extracting air inside the development chamber to outside the development chamber;a carrier, disposed in the development chamber, for supporting a wafer;a plurality of temperature sensors, disposed on the carrier, for detecting temperatures of a plurality of target regions;a plurality of mutually independent air supply pipelines, for supplying air to the development chamber, each air supply pipeline having a nozzle towards the carrier, each of the target regions corresponding to at least one air supply pipeline; anda control unit, for acquiring measured temperatures of the temperature sensors and basing on the measured temperatures to calculate current temperatures of the corresponding target regions, and basing on the current temperatures of the target regions to adjust air parameters of the corresponding air supply pipelines, so that the temperatures of the corresponding target regions rest within a ...

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Номер записи: 33
21-02-2019 дата публикации

Developing Method, Developing Apparatus, and Computer-Readable Recording Medium

Номер: US20190056666A1
Автор: Hirofumi Takeguchi, Tomohiro Iseki, Yuichi Terashita
Принадлежит: Tokyo Electron Ltd

There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

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Номер записи: 34
05-03-2015 дата публикации

NEGATIVE-WORKING PHOTOSENSITIVE SILOXANE COMPOSITION

Номер: US20150064613A1
Автор: Fuke Takashi, Nonaka Toshiaki, NOYA Atsuko, TAKAHASHI Megumi, Tanaka Yasuaki, TANIGUCHI Katsuto, Tashiro Yuji, Yokoyama Daishi, Yoshida Naofumi
Принадлежит:

[Object] 1. A negative-working photosensitive siloxane composition , comprisinga polysiloxane,a silicon-containing compound having an ureido bond,a polymerization initiator, anda solvent.2. The negative-working photosensitive siloxane composition according to claim 1 , wherein said polysiloxane has a weight average molecular weight of 5000 or less.4. The negative-working photosensitive siloxane composition according to claim 3 , wherein said silicon-containing compound is a silicon-containing isocyanurate compound.5. The negative-working photosensitive siloxane composition according to claim 1 , which contains said polymerization initiator in an amount of 0.001 to 10 weight parts based on 100 weight parts of said polysiloxane.6. The negative-working photosensitive siloxane composition according to claim 1 , which contains said silicon-containing compound in an amount of 0.5 to 8.0 weight parts based on 100 weight parts of said polysiloxane.7. The negative-working photosensitive siloxane composition according to claim 1 , which further contains an additive selected from the group consisting of adhesion enhancer claim 1 , polymerization inhibitor claim 1 , defoaming agent claim 1 , surfactant claim 1 , photosensitizer and stabilizer.8. A cured film-manufacturing method comprising the steps of: coating on a substrate the negative-working photosensitive siloxane composition according to claim 1 , to form a coating; exposing the coating to light; and developing the exposed coating.9. The cured film-manufacturing method according to claim 8 , which does not comprise a step of heating for curing the coating after development.10. A cured film formed from the negative-working photosensitive siloxane composition according to .11. A device comprising the cured film according to .12. The negative-working photosensitive siloxane composition according to claim 1 , wherein the structure of the polysiloxane is selected from the group consisting of a silicone structure claim 1 , a ...

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Номер записи: 35
04-03-2021 дата публикации

DEVELOPING TREATMENT METHOD AND DEVELOPING TREATMENT APPARATUS

Номер: US20210063885A1
Автор: Ichinomiya Hiroshi, Kai Akiko
Принадлежит:

A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid, the (B) including: (a) accelerating a rotation speed of the substrate; and (b) after the (a), decelerating the rotation speed of the substrate until a start of the (C), wherein a deceleration in the (b) is lower than an acceleration in the (a). 1. A developing treatment method for performing a developing treatment on a resist film on a substrate , the developing treatment method comprising:(A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern;(B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid;(C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and(D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid, (a) accelerating a rotation speed of the substrate; and', '(b) after the (a), decelerating the rotation speed of the substrate until a start of the (C), wherein', 'a deceleration in the (b) is lower than an acceleration in the (a)., 'the (B) comprising2. The developing treatment method according to claim 1 , whereinthe (D) comprises:(c) rotating the substrate while supplying the rinse ...

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Номер записи: 36
22-05-2014 дата публикации

DEVELOPER AND PATTERNING PROCESS

Номер: US20140141377A1
Автор: Hatakeyama Jun
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

An aqueous solution containing 0.1-10 wt % of a guanidine is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a coating, baking, exposing the coating to high-energy radiation, and developing the exposed coating in a guanidine-containing aqueous solution. 1. A developer for photosensitive resist materials comprising an aqueous solution containing 0.1 to 10% by weight of at least one guanidine.3. The developer of wherein the guanidine is 1 claim 1 ,1 claim 1 ,3 claim 1 ,3-tetramethylguanidine.5. A pattern forming process comprising the steps of providing a chemically amplified positive resist composition adapted to increase an alkali dissolution rate under the action of acid claim 1 , and developing the resist composition in a guanidine-containing aqueous solution according to any one of to .6. The pattern forming process of wherein the chemically amplified positive resist composition comprises a polymer comprising recurring units having an acid labile group and recurring units having a hydroxyl and/or lactone ring adhesive group as a base resin.9. The pattern forming process of claim 5 , wherein the resist composition further comprises at least one of an organic solvent claim 5 , basic compound claim 5 , dissolution regulator claim 5 , and surfactant.10. The pattern forming process of claim 5 , comprising the steps of applying the resist composition onto a substrate to form a coating claim 5 , baking claim 5 , exposing the coating to high-energy radiation claim 5 , and developing the exposed coating in the developer.11. The pattern forming process of wherein the high-energy radiation is KrF excimer laser of wavelength 248 nm claim 10 , ArF excimer laser of wavelength 193 nm claim 10 , electron beam or soft x-ray of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2012-255157 ...

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Номер записи: 37
17-03-2022 дата публикации

WAFER CLEANING APPARATUS AND WAFER CLEANING METHOD USING THE SAME

Номер: US20220084812A1
Автор: Jang Hun Jae, Kim Seo Hyun, Kim Seung Ho, KIM Tae-Hong, Kim Young Chan, Kim Young-Hoo, Lee Kun Tack, Nho Hyun Woo, Park Sung Hyun, Shin Seung Min
Принадлежит:

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed. 1. A method for cleaning a wafer , comprising:providing a wafer on a stage inside of a chamber;fixing the wafer to the stage by moving a grip pin that is connected to an edge of the stage to the wafer;supplying first ultrapure water onto the wafer while the wafer is rotating at a first rotation speed;releasing the grip pin from the wafer by moving the grip pin away from the wafer; andperforming a development process by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.2. The wafer cleaning method of claim 1 , further comprising claim 1 , after the development process is completed:moving the grip pin toward a center of the stage to fix the wafer to the stage;supplying second ultrapure water onto the wafer while the wafer is rotating at the first rotation speed to clean the wafer; anddrying the wafer.3. The wafer cleaning method of claim 1 , wherein the providing of the wafer onto the stage comprises:forming a photoresist layer on the wafer;forming a mask pattern on the photoresist layer; andexposing the photoresist layer through the mask pattern.4. The wafer cleaning method of claim 1 , wherein the fixing of the wafer to the stage by moving the grip pin comprises:moving the grip pin toward a center of the stage to bring the grip pin into contact with a side surface of the wafer.5. The wafer cleaning method of claim 1 , wherein ...

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Номер записи: 38
27-02-2020 дата публикации

Substrate processing apparatus

Номер: US20200064741A1
Автор: Tsunenaga Nakashima
Принадлежит: Tokyo Electron Ltd

In a chemical liquid container replacement device D2 configured to replace a chemical liquid container 50, multiple chemical liquid containers 50 respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device 61 is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container 50 of a container arrangement section 60. A loading/unloading port 62 loads a new chemical liquid container 50 for performing a liquid process on a substrate W and unloads a completely used chemical liquid container 50. A container transfer device 7 unloads the completely used chemical liquid container 50 from the container arrangement section 60 toward the loading/unloading port 62 and loads the new chemical liquid containers 50 from the loading/unloading port 62 toward the container arrangement section 60.

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Номер записи: 39
19-03-2015 дата публикации

Lithography Process Using Directed Self Assembly

Номер: US20150076108A1
Автор: Chang Yu-Sheng
Принадлежит:

A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer, dispensing a Bulk Co-Polymer (BCP) coating in the trench, wherein the BCP coating comprises a mix of a first material and a second material different from the first material. The method further includes treating the BCP coating with a chemical to form a first plurality of strips of the first material and a second plurality of strips of the second material, with the first plurality of strips and the second plurality of strips allocated in an alternating layout. The second plurality of strips is selectively etched, and the first plurality of strips is left in the trench. 1. A method comprising:forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer;dispensing a Bulk Co-Polymer (BCP) coating in the trench, wherein the BCP coating comprises a mix of a first material and a second material different from the first material;treating the BCP coating with a chemical to form a first plurality of strips of the first material and a second plurality of strips of the second material, with the first plurality of strips and the second plurality of strips allocated in an alternating layout; andselectively etching the second plurality of strips, with the first plurality of strips left in the trench.2. The method of further comprising using the first strips and the hard mask layer in combination as an etching mask to etch a layer underlying the first plurality of strips and the patterned hard mask layer.3. The method of claim 1 , wherein the first material comprises Poly-Styrele (PS) claim 1 , and the second material comprises Poly Methyl Metha Crylate (PMMA).4. The method of claim 1 , wherein the treating the BCP coating with the chemical comprises treating the BCP coating with toluene.5. The method of further comprising claim 1 , before the dispensing the BCP coating claim 1 , forming a neutralized layer claim 1 , wherein the BCP coating is ...

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Номер записи: 40
19-03-2015 дата публикации

Coating and developing apparatus, method of operating the same and storage medium

Номер: US20150077727A1
Автор: Tomohiro Kaneko
Принадлежит: Tokyo Electron Ltd

A coating and developing apparatus includes: first and second transfer mechanisms for transferring a substrate from a first mount module to a second mount module, one of the first and second transfer mechanisms being selected each time when the substrate transfer should be performed; first and second processing modules for performing substrate processing, for which the transfer of substrates is performed by the first and second transfer mechanisms, respectively; and a control unit. The control unit controls the transfer mechanisms for the substrate transfer by determining a delay time, representing a delay caused by the transfer of the substrate to the second mount module to the timing of transfer of a substrate from the first/second processing module, in regard to each of the first and second transfer mechanisms and selecting one of the first and second transfer mechanisms whose delay time is the shortest.

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Номер записи: 41
19-03-2015 дата публикации

PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD

Номер: US20150079522A1
Автор: KANNA Shinichi, TSUBAKI Hideaki
Принадлежит: FUJIFILM Corporation

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. 1. A pattern forming method , comprising:coating a substrate with a resist composition capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form the resist film;exposing the resist film with an EUV light;developing the resist film with the negative developer containing an organic solvent; andwashing the resist film with a rinsing solution containing a hydrocarbon-based organic solvent.2. The pattern forming method according to claim 1 ,wherein the hydrocarbon-based organic solvent is an aliphatic hydrocarbon based organic solvent.3. The pattern forming method according to claim 1 ,wherein the organic solvent in the negative developer contains an ester-based solvent.4. A method of forming an electronic device claim 1 , comprising the pattern forming method according to .5. A pattern forming method claim 1 , comprising:coating a substrate with a resist composition containing a resin of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation and being capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a ...

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Номер записи: 42
17-03-2016 дата публикации

METHODS OF FORMING PATTERNS

Номер: US20160077435A1
Автор: BAN Keun Do, BOK Cheol Kyu, HEO Jung Gun, KIM Hong Ik
Принадлежит:

A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns. 1. A method of forming patterns , the method comprising:forming a developable antireflective layer on an underlying layer disposed on a semiconductor substrate;forming a photoresist layer on the developable antireflective layer;selectively exposing portions of the photoresist layer and portions of the developable antireflective layer to light;selectively removing non-exposed portions of the photoresist layer to form a photoresist pattern exposing non-exposed portions of the developable antireflective layer;selectively removing the exposed portions of the developable antireflective layer to form guide patterns;forming a neutral layer that fills a space between the guide patterns;forming a self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer;annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains, which are alternately and repeatedly arrayed; andselectively removing the first polymer block domains,2. The method of claim 1 , wherein the selectively removing non-exposed portions of the photoresist layer is performed using a negative tone developer.3. The method of claim 1 , wherein the selectively removing the exposed portions of the developable antireflective layer is performed using a positive tone developer.4. The method of claim 3 , wherein the positive ...

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Номер записи: 43
24-03-2022 дата публикации

METHOD AND APPARATUS TO DEVELOP LITHOGRAPHICALLY DEFINED HIGH ASPECT RATIO INTERCONNECTS

Номер: US20220091511A1
Автор: Tadayon Pooya
Принадлежит: Intel Corporation

An apparatus, comprising at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel, a shaft has a proximal end and a distal end, wherein the distal end of the shaft extends into the interior of the at least one vessel, wherein the proximal end of the shaft is coupled to a motor, at least one support structure which extends laterally from the shaft; and a substrate attachment fixture on a distal end of the at least one support structure, wherein the at least one support structure and the substrate attachment fixture are within the interior of the at least one vessel. 1. A method , comprising:providing a vessel having a bottom and a sidewall extending from the bottom and enclosing an interior of the vessel within which a liquid photoresist developer is to be contained;providing a shaft having a proximal end and a distal end, wherein the distal end extends into the interior of the vessel; andproviding a motor external of the vessel and coupled to rotate the the shaft, wherein a plurality of support arms extend radially from the shaft at a first distance from the distal end of the shaft, and wherein the plurality of support arms are to be immersed in the developer at angles about the shaft to balance forces acting on the shaft during rotation by the motor, and wherein a substrate mount is on a distal end of each of the support arms, and the substrate mount is to hold a substrate immersed in the developer with a layer of photoresist on the substrate facing away from the shaft.2. The method of claim 1 , further comprising providing motor control circuitry coupled to the motor to cause the motor to rotate the shaft at a predetermined rate of rotation for predetermined time periods according to a predetermined rotation duty cycle.3. The method of claim 2 , wherein the motor control circuitry is to control the motor to rotate the shaft according to a predetermined ...

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Номер записи: 44
22-03-2018 дата публикации

EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD

Номер: US20180081275A1
Автор: MATSUURA Seiji
Принадлежит:

An exposure apparatus includes a polarizing member polarizing illumination light, and a filter having at least one opening. The polarizing member includes a first polarizing unit and a second polarizing unit arranged so as to surround the first polarizing unit. The second polarizing unit is configured so as to polarize the illumination light entering the second polarizing unit in the circumferential direction along the outer circumference of the first polarizing unit. At least a portion of the first polarizing unit is configured to polarize the illumination light in the direction orthogonal to the polarization direction in a part of the second polarizing unit located on the side opposite to the central part of the first polarizing unit. The openings are arranged in the filter so that the illumination light at the post stage of the filter and the polarizing member includes the illumination light polarized by the first and second polarizing units. 1. An exposure apparatus comprising:a light source emitting illumination light for exposure;a polarizing member polarizing the illumination light; anda filter having at least one opening,wherein the polarizing member includes a first polarizing unit and a second polarizing unit arranged so as to surround the first polarizing unit when viewed from the incident direction of the illumination light with respect to the polarizing member,wherein the second polarizing unit is configured so as to polarize at least a part of the illumination light entering the second polarizing unit in the circumferential direction along the outer circumference of the first polarizing unit,wherein at least a portion of the first polarizing unit is configured to polarize the illumination light in the direction orthogonal to the polarization direction in a part of the second polarizing unit located on the side opposite to the central part of the first polarizing unit when viewed from the portion, andwherein the openings are arranged in the filter so ...

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Номер записи: 45
30-03-2017 дата публикации

Developing method, developing apparatus and storage medium

Номер: US20170090291A1
Автор: Hideharu Kyouda, Koshi MUTA, Kousuke Yoshihara, Masahiro Fukuda, Taro Yamamoto, Yasushi Takiguchi
Принадлежит: Tokyo Electron Ltd

A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.

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Номер записи: 46
09-04-2015 дата публикации

CHEMICAL LIQUID CONTAINER REPLACEMENT DEVICE, CONTAINER MOUNTING MODULE, CHEMICAL LIQUID CONTAINER REPLACEMENT METHOD, AND SUBSTRATE PROCESSING APPARATUS

Номер: US20150096682A1
Автор: NAKASHIMA Tsunenaga
Принадлежит:

In a chemical liquid container replacement device D2 configured to replace a chemical liquid container , multiple chemical liquid containers respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container of a container arrangement section . A loading/unloading port loads a new chemical liquid container for performing a liquid process on a substrate W and unloads a completely used chemical liquid container . A container transfer device unloads the completely used chemical liquid container from the container arrangement section toward the loading/unloading port and loads the new chemical liquid containers from the loading/unloading port toward the container arrangement section 1. A chemical liquid container replacement device comprising:a container arrangement section in which multiple chemical liquid containers respectively connected with base end sides of chemical liquid supply paths are arranged;an attachment/detachment device configured to attach and detach the base end side of the chemical liquid supply path with respect to the chemical liquid container arranged in the container arrangement section;a loading/unloading port through which a new chemical liquid container storing therein a chemical liquid to perform a liquid process on a substrate is loaded and a completely used chemical liquid container is unloaded; anda container transfer device configured to unloaded the completely used chemical liquid container from the container arrangement section through the loading/unloading port and load the new chemical liquid container into the container arrangement section through the loading/unloading port.2. The chemical liquid container replacement device of claim 1 , further comprising:a cover opening/closing device configured to close a chemical ...

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Номер записи: 47
09-04-2015 дата публикации

NANOLITHOGRAPHY USING LIGHT SCATTERING FROM PARTICLES AND ITS APPLICATIONS IN CONTROLLED MATERIAL RELEASE

Номер: US20150098984A1
Автор: Chang Chih-Hao, Zhang Xu A.
Принадлежит:

The present disclosure provides hollow nanostructures, methods of forming thereof, and methods of delivery of further nanomaterials utilizing the hollow nanostructures. The hollow nanostructures can be formed by illuminating particles, such as spherical particles, to create a scattering pattern that can be captured on, for example, a photoresist. Thus formed nanoparticles can have a substantially frusto-conical shape that can be tailored based on a variety of factors, including, for example, particle size, particle shape, light exposure characteristics, and light polarization. 1. A method of making a hollow nanostructure comprising:positioning a micro- or nano-sized particle over a photoresist;illuminating the particle, thereby forming a scattering pattern on the photoresist; anddeveloping the photoresist to reveal the hollow nanostructure defined by the scattering pattern.2. The method of claim 1 , wherein the particle has a diameter of about 50 μm or less.3. The method of claim 1 , wherein the particle has a diameter in the range of about 200 nm to about 2000 nm.4. The method of claim 3 , comprising illuminating the particle with an exposure laser having a wavelength of about 325 nm to about 405 nm.5. The method of claim 1 , wherein the particle has a diameter in the range of about 5 nm to about 50 nm.6. The method of claim 5 , comprising illuminating the particle with an exposure having a wavelength of about 1 nm to about 10 nm.7. The method of claim 1 , wherein the scattering pattern corresponds to a ratio γ of the particle diameter D to the exposure wavelength λ(γ=D/λ).8. A nanostructure comprising:a base;a top with an opening formed thereon; anda sloped sidewall connecting the base to the top and forming a frusto-conical shape having an angle θ; anda hollow chamber defined by the base and sidewall and communicating with the top opening.9. A nanostructure array comprising a plurality of the nanostructures of .10. The nanostructure array of claim 9 , wherein the ...

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Номер записи: 48
09-04-2015 дата публикации

RESIST COMPOSITION AND PATTERNING PROCESS

Номер: US20150099228A1
Автор: Hatakeyama Jun, Katayama Kazuhiro, Tachibana Seiichiro
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A resist composition comprises a metal compound obtained from reaction of a starting metal compound having formula (A-1) or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a di- or trihydric alcohol having formula (A-2). 1. A resist composition comprising a metal compound obtained from reaction of at least one metal compound selected from the group consisting of a metal compound having the general formula (A-1) and a metal compound obtained from (partial) hydrolysis or condensation , or (partial) hydrolytic condensation of the metal compound of formula (A-1) , with a di- or trihydric alcohol having the general formula (A-2) ,{'br': None, 'sup': '1A', 'sub': '4', 'M(OR)\u2003\u2003(A-1)'}{'sup': '1A', 'sub': 1', '6, 'claim-text': {'br': None, 'sup': '2A', 'sub': 'm', 'R(OH)\u2003\u2003(A-2)'}, 'wherein M is an element selected from the group consisting of titanium, zirconium, and hafnium, and Ris a straight or branched C-Calkyl group,'}{'sup': 2A', '2A, 'sub': 2', '20', '1', '6, 'wherein m is 2 or 3, when m is 2, Ris a divalent group selected from the group consisting of a straight, branched or cyclic C-Calkylene, alkenylene, alkynylene or aralkylene group, a straight or branched alkylene group substituted with a cyclic alkyl, cyclic alkenyl or aryl moiety, and a straight or branched alkylene group having an intervening cyclic alkylene, cyclic alkenylene or arylene moiety, said divalent group may have a cyano moiety or be separated by a carbonyl, ester, ether, thiol or NR moiety wherein R is hydrogen or a straight or branched C-Calkyl group, and when m is 3, Ris a trivalent group corresponding to the divalent group with one hydrogen eliminated.'}2. A pattern forming process comprising the steps of coating the resist composition of onto a substrate claim 1 , baking claim 1 , exposing to high-energy radiation claim 1 , and developing with a developer.3. The process of wherein the developer is alkaline water.4. The process of ...

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Номер записи: 49
19-03-2020 дата публикации

DEVELOPER CRITICAL DIMENSION CONTROL WITH PULSE DEVELOPMENT

Номер: US20200089188A1
Автор: Johnson Richard C., Tang Hao, Xu Yongan
Принадлежит:

Embodiments of the invention include methods and structures for controlling developer critical dimension (DCD) variations across a wafer surface. Aspects of the invention include an apparatus having developer tubing and an internal cam. The internal cam is coupled to a fixed axis. A flexible divider is positioned between the developer tubing and the internal cam. The flexible divider is coupled to the internal cam such that rotation of the internal cam about the fixed axis is operable to change an inner diameter of the developer tubing. 1. An apparatus for controlling developer critical dimension (DCD) variations across a wafer surface , the apparatus comprising:developer tubing;an internal cam coupled to a fixed axis; anda flexible divider between the developer tubing and the internal cam;wherein the flexible divider is coupled to the internal cam such that rotation of the internal cam about the fixed axis is operable to change an inner diameter of the developer tubing.2. The apparatus of claim 1 , wherein rotation of the internal cam about the fixed axis deforms the flexible divider.3. The apparatus of claim 2 , wherein deforming the flexible divider displaces a portion of the flexible divider into a portion of the developer tubing.4. The apparatus of claim 1 , wherein rotation of the internal cam to a first position corresponds to a first inner diameter of the developer tubing and rotation of the internal cam to a second position corresponds to a second inner diameter of the developer tubing.5. The apparatus of claim 1 , wherein the first and second inner diameters are dissimilar.6. The apparatus of claim 1 , wherein the internal cam comprises an elliptical or oval shape.7. The apparatus of claim 1 , wherein the flexible divider comprises an elastic material.8. The apparatus of claim 1 , wherein the internal cam can rotate about the fixed axis in a clockwise or counter-clockwise direction.9. The apparatus of claim 1 , wherein a rotation speed and a position of ...

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Номер записи: 50
16-04-2015 дата публикации

DEVELOPING APPARATUS

Номер: US20150104747A1
Автор: HARUMOTO Masahiko, Hisai Akihiro, Kuroda Takuya, SUGIYAMA Minoru, YAMAGUCHI Akira
Принадлежит:

A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other. 1. A developing method for developing a substrate , comprising:spinning the substrate with a spin holder;discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder;causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate in plan view; andcausing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate;wherein said spin holder and said moving mechanism are controlled to cause positions of impingement of adjacent streams of the developer to be close to each other, thereby to cover ranges of the substrate between loci of the positions of impingement with the developer spreading after impingement;a rearmost one ...

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Номер записи: 51
14-04-2016 дата публикации

PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD

Номер: US20160103395A1
Автор: KANNA Shinichi, TSUBAKI Hideaki
Принадлежит: FUJIFILM Corporation

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. 1. A pattern forming method , comprising:coating a substrate with a resist composition capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays and or radiation, so as to form a resist film; anddeveloping the resist film exposed with the negative developer containing an organic solvent,wherein the organic solvent in the negative developer contains a ketone-based solvent,the pattern forming method only includes negative development for developing the resist film exposed, andthe resist composition contains a resin having an aromatic group.2. The pattern forming method according to claim 1 , further comprising:exposing the resist film with an EUV light.3. The pattern forming method according to claim 1 , further comprising:washing the resist film with a rinsing solution containing at least one selected from the group consisting of a hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent.4. The pattern forming method according to claim 3 ,wherein the rinsing solution contains at least one selected from the group consisting of an aliphatic hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent.5. The pattern forming method ...

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Номер записи: 52
23-04-2015 дата публикации

USE OF GRAPHO-EPITAXIAL DIRECTED SELF-ASSEMBLY TO PRECISELY CUT LINES

Номер: US20150108087A1
Автор: Rathsack Benjamen M., Somervell Mark H.
Принадлежит:

A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension Lthat is between 0.9 and 1.1 times the spacing between individual lines of the plurality of lines. 1. A method for forming a patterned topography on a substrate , comprising:providing a substrate with a plurality of lines formed atop;applying a first planarization layer on the plurality of lines;applying a first antireflective layer over the first planarization layer;applying a first layer of radiation-sensitive material over the first antireflective layer;patterning the first layer of radiation-sensitive material to form a first radiation-sensitive material pattern;transferring the first radiation-sensitive material pattern into the first planarization layer by etching the first antireflective layer and first planarization layer to partially expose the plurality of lines, the exposed portions of the plurality of lines forming first exposed line portions;stripping any remaining portions of the first radiation-sensitive material pattern and the first antireflective layer to leave the first exposed line portions surrounded by a first template for directed self-assembly (DSA);optionally treating the first exposed line portions or the first template, or both to alter ...

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Номер записи: 53
13-04-2017 дата публикации

SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE MEDIUM

Номер: US20170102616A1
Автор: Fukuda Masahiro, Hashimoto Yusaku, Shimoaoki Takeshi, Tanaka Kouichirou
Принадлежит: TOKYO ELECTRON LIMITED

A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface. 1. A substrate processing method comprising the steps of:supplying a developer onto a surface of a substrate from a discharge port of a nozzle in a state in which the substrate is rotated at a first rotation speed and a liquid contact surface formed around the discharge port faces the surface of the substrate, and moving the nozzle while the liquid contact surface is in contact with the developer in such a manner that a liquid film of the developer is formed on the surface of the substrate;rotating the substrate at a second rotation speed which is slower than the first rotation speed after the liquid film is formed on the surface of the substrate, in a state in which supply of the developer from the discharge port is stopped;rotating the substrate at a third rotation speed which is faster than the first rotation speed, after the substrate is rotated at the second rotation speed; andreducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, in such a manner that the liquid film is held on the surface of the substrate.2. ...

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Номер записи: 54
08-04-2021 дата публикации

Extreme Ultraviolet Photolithography Method With Developer Composition

Номер: US20210103213A1
Автор: Chang Ching-Yu, Cheng Joy, Lin Chin-Hsiang, ZI An-Ren
Принадлежит:

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical. 1. A method comprising:forming a material layer on a substrate;forming a photoresist layer over the material layer disposed on the substrate, wherein the photoresist layer includes a metal-containing chemical;performing an exposing process to the photoresist layer;prior to performing any etching of the material layer, performing a first developing process to the photoresist layer using a first developer to pattern the photoresist layer, wherein the first developer removes metal residuals generated from the metal-containing chemical; andafter the performing of the first developing process, etching the material layer while using the patterned resist layer as a mask.2. The method of claim 1 , further comprising performing a second developing process to the photoresist layer using a second developer that is different than the first developer claim 1 , andwherein the performing of the second developing process occurs prior to performing any etching of the material layer and further occurs either before or after the performing of the first developing process.3. The method of claim 1 , further comprising performing a baking process after the performing of the exposing process such that the photoresist layer undergoes a chemical change.4. The method of claim 3 , wherein the performing of the baking process is occurs at a temperature ranging between about 120° C. and about 170° C.5. The method of claim 1 , ...

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Номер записи: 55
21-04-2016 дата публикации

PHOTORESIST HAVING DECREASED OUTGASSING

Номер: US20160108170A1
Автор: Chang Ching-Yu, Lai Wei-Han
Принадлежит:

Provided is a method of fabricating a semiconductor device. A substrate is provided. A material layer is formed over the substrate. A photoresist layer is formed over the material layer. The photoresist layer contains a polymer. The polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups. The photoresist layer is then patterned using a lithography process, for example an extreme ultraviolet (EUV) lithography process. 27-. (canceled)9. The photoresist material of claim 8 , wherein:the photoresist further contains a photo acid generator (PAG) that is configured to release acid; andthe polymer is cleavable by the acid, after which the polymer becomes more hydrophilic and is dissolvable by a basic solution.10. The photoresist material of claim 8 , wherein the polymer is configured to be applied in a positive tone developer process or in a negative tone developer process.12. The method of claim 11 , wherein the lithography process is an extreme ultraviolet (EUV) lithography process.13. The method of claim 11 , further comprising forming a material layer over the substrate claim 11 , wherein the photoresist layer is formed over the material layer.1415-. (canceled)16. The method of claim 11 , wherein the photoresist further contains a photo acid generator (PAG) claim 11 , and wherein the lithography process comprises:an optical exposure process in which the PAG releases acid; anda post-exposure baking process in which the polymer is cleaved by the acid released by the PAG.17. The method of claim 11 , wherein the polymer becomes more hydrophilic after being cleaved by the acid.18. The method of claim 11 , wherein the lithography process further comprises: after the polymer becomes more hydrophilic claim 11 , dissolving the polymer by a basic solution in a positive tone developer process or by an organic solvent in a negative tone developer process.19. The method of claim 11 , wherein the basic solution contains ...

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Номер записи: 56
10-07-2014 дата публикации

Method and Apparatus for Drying a Wafer

Номер: US20140190634A1
Автор: Hsieh Hung Chang, HUANG WEI-CHIEH
Принадлежит: Taiwan Semiconductor Manufacturing Company, Ltd.

The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated. 1. An apparatus for fabricating a semiconductor device , comprising:a wafer chuck configured to a wafer such that a first side of the wafer would be facing the wafer chuck when the wafer is held;a nozzle configured to dispense a solution to a second side of the wafer that is opposite the first side; anda mechanical structure configured to rotate the wafer chuck horizontally and raise or lower the wafer chuck vertically, wherein the mechanical structure is configured to lower the wafer chuck at a greater speed than when it raises the wafer chuck.2. The apparatus of claim 1 , wherein the mechanical structure is configured to lower the wafer chuck while the wafer chuck is being rotated horizontally.3. The apparatus of claim 1 , wherein the mechanical structure is configured to lower the wafer chuck with a downward acceleration that exceeds an acceleration of gravity.4. The apparatus of claim 1 , wherein the mechanical structure is configured to repeat a plurality of cycles claim 1 , wherein the wafer chuck is raised and lowered by the mechanical structure in each cycle.5. The ...

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Номер записи: 57
29-04-2021 дата публикации

Developing treatment apparatus and developing treatment method

Номер: US20210124303A1
Автор: Hidenori TOSU, Ryouichirou Naitou, Seiichi KURE, Takahiro Yamaguchi
Принадлежит: Tokyo Electron Ltd

A developing treatment apparatus for performing a developing treatment on a treatment object substrate, the developing treatment apparatus includes: a rotating and holding part configured to hold and rotate the treatment object substrate; a discharger configured to discharge a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer configured to supply ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

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Номер записи: 58
02-04-2020 дата публикации

CONTROL METHOD OF MOVABLE BODY, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, MOVABLE BODY APPARATUS, AND EXPOSURE APPARATUS

Номер: US20200103773A1
Автор: UEDA Akihiro
Принадлежит: NIKON CORPORATION

In a beam irradiation apparatus in which a movable body holds an object, a mark detection system detects a first mark on the movable body while moving the movable body in a first direction and changing an irradiation position of a measurement beam in the first direction, the mark detection system detects a second mark while moving the movable body in the first direction and changing the irradiation position of the measurement beam in the first direction, a controller controls a position of the movable body in a second direction intersecting the first direction during a time period between the detection of the first mark and the detection of the second mark, and the controller controls the movement of the movable body to adjust a positional relation between the object on the movable body and a processing beam, based on results of the detection of the first and second marks. 111-. (canceled)12. A measurement device , comprising: the irradiation system irradiating, with a measurement beam via the objective lens, a grating mark provided at an object that is moved in a first direction while moving the measurement beam in the first direction with respect to the grating mark,', 'the objective lens being capable of facing the object that is moved in the first direction, and', 'the beam receiving system receiving, from the grating mark, a diffraction beam of the measurement beam via the objective lens., 'an irradiation system, an objective lens and a beam receiving system,'}13. The measurement device according to claim 12 , whereinthe measurement beam is transmitted through a center portion of the objective lens and is irradiated on the grating mark.14. The measurement device according to claim 13 , whereinthe measurement beam transmitted through the center portion of the objective lens is irradiated on the grating mark from a second direction intersecting the first direction.15. The measurement device according to claim 13 , whereinthe diffraction beam received from the ...

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Номер записи: 59
11-04-2019 дата публикации

DEVELOPING METHOD

Номер: US20190107780A1
Автор: HARUMOTO Masahiko, KANEYAMA Koji, Miyagi Tadashi, Tanaka Yuji
Принадлежит:

In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation. 1. A developing method for performing development to a substrate , the developing method comprising:a spinning step of spinning the substrate about the center of the substrate with a spin holder;a coating step of starting discharge of a prewet liquid through a prewet nozzle to a second position set in advance on the spinning substrate away from the center, and coating the center with spread of the prewet liquid immediately after the discharge of the prewet liquid; anda discharge starting step of starting discharge of developer through a developing nozzle on the spinning substrate after stopping the discharge of the prewet liquid.2. The developing method according to claim 1 , further comprising:a coating step of starting discharge of a rinse liquid through a rinse nozzle to a third position set in advance on the spinning substrate away from the center after stopping the discharge of the developer, and coating the center with spread of the rinse liquid immediately after starting the discharge of the rinse liquid.3. A developing method for performing development to a substrate claim 1 , the developing method comprising:a spinning step of spinning the substrate about the center of the substrate with a ...

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Номер записи: 60
30-04-2015 дата публикации

PHOTO MASK AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING TRENCHES BY USING PHOTO MASK

Номер: US20150118603A1
Автор: CHO Soon Jin, HONG Dae Jo, Lee Oh Hi
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Embodiments of the invention provide a photo mask capable of simultaneously forming trenches for preventing an under-fill leakage in a process of forming an opening of a solder resist. In accordance with at least one embodiment, the photo mask includes a transparent base material having a non-transmitting film formed on one surface thereof, a semi-transmitting region formed by performing selective etching using a laser on the transparent base material, a transmitting region and a non-transmitting region formed on the transparent base material together with the semi-transmitting region, and an opening of a solder resist and trenches for preventing a leakage of an under-fill liquid or EMC mold may be simultaneously formed using the photo mask. 1. A photo mask , comprising:a transparent base material; anda mask pattern layer comprising a transmitting region, a non-transmitting region, and a semi-transmitting region on the transparent base material,wherein the mask pattern layer is configured by the transmitting region in which the transparent base material is exposed, and the non-transmitting region and the semi-transmitting region in which a non-transmitting film is covered over the transparent base material, andwherein the semi-transmitting region is formed of the non-transmitting film having a thickness thinner than the non-transmitting region.2. The photo mask according to claim 1 , wherein the transparent base material is any one of a transparent film or a transparent substrate.3. The photo mask according to claim 1 , wherein the non-transmitting region of the photo mask has a thickness of 0.1 to 0.5 μm.4. The photo mask according to claim 1 , wherein the non-transmitting region of the photo mask is a chrome film.5. The photo mask according to claim 1 , wherein the semi-transmitting region has a different light transmissivity depending on the thickness of the non-transmitting film.6. The photo mask according to claim 1 , wherein the semi-transmitting region has a ...

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Номер записи: 61
07-05-2015 дата публикации

COLOR FILTER SUBSTRATE, METHOD FOR FABRICATING THE SAME AND LIQUID CRYSTAL DISPLAY SCREEN

Номер: US20150124200A1
Автор: JIANG Jingjing, LEE Gyuhyun, Li Min, WU Hongjiang
Принадлежит:

A color filter substrate and its fabrication method as well as a LCD screen are disclosed. The color filter substrate includes a base substrate, a plurality of color filter elements, and a microlens structure. The plurality of color filter elements are disposed on the base substrate, and the microlens structure is disposed on the plurality of color filter elements. 1. A color filter substrate , comprising a base substrate , a plurality of color filter elements , and a microlens structure , wherein the plurality of color filter elements are disposed on the base substrate , the microlens structure is disposed on the plurality of color filter elements.2. The color filter substrate of claim 1 , wherein the microlens structure is an array of multiple lenticular lenses.3. The color filter substrate of claim 2 , wherein each of the lenticular lenses covers two columns of pixel units of the color filter substrate claim 2 , each pixel unit comprises a plurality of color filter elements.4. The color filter substrate of claim 1 , wherein a microlens material of the microlens structure is a transparent photoresist material.5. The color filter substrate of claim 4 , wherein the transparent photoresist material forms the microlens structure through a pattering process.6. The color filter substrate of claim 1 , wherein the color filter substrate further comprises black matrix claim 1 , the black matrix is disposed between the plurality of color filter elements.7. A method for fabricating a color filter substrate claim 1 , comprising the following step:forming a plurality of color filter elements on a base substrate;coating a transparent photoresist on the substrate done with the previous step, exposing and developing the substrate having the transparent photoresist coated thereon to form a patterned transparent layer on the base substrate by using a mask;performing a high-temperature process on the substrate done with the previous step, such that the transparent layer is in a ...

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Номер записи: 62
07-05-2015 дата публикации

FORMING CONDUCTIVE METAL PATTERNS WITH REACTIVE POLYMERS

Номер: US20150125667A1
Автор: Brust Thomas B., Falkner Catherine A., Irving Mark Edward
Принадлежит:

A pattern is formed in a polymeric layer comprising a reactive composition that comprises: (a) a polymer comprising pendant—arylene-X—C(═O)—O— t-alkyl groups that comprise a blocking group that is cleavable to provide pendant—arylene-XH groups, (b) a compound that provides a cleaving acid upon exposure to radiation having a λof 150 nm and to 450 nm, which cleaving acid has a pKa of 2 or less as measured in water, and (c) optionally, a photosensitizer. The polymeric layer is imagewise exposed to suitable radiation to provide non-exposed regions and exposed regions comprising a de-blocked and crosslinked polymer with pendant—arylene-XH groups. The exposed regions are contacted with electroless seed metal ions in the de-blocked and crosslinked polymer. After reduction, the corresponding electroless seed metal nuclei are electrolessly plated using a suitable metal that is the same as or different from the corresponding electroless seed metal nuclei. 1. A method for forming a pattern in a polymeric layer , the method comprising: (a) reactive polymer comprising pendant—arylene-X—C(═O)—O-t-alkyl groups wherein X is —NR—, —O—, or —S—, R is hydrogen or an alkyl group, and t-alkyl is a tertiary alkyl group, from which —C(═O)—O-t-alkyl groups are cleavable using a cleaving acid,', {'sub': 'max', '(b) compound that provides a cleaving acid upon exposure to radiation having a λof at least 150 nm and up to and including 450 nm, which cleaving acid has a pKa of 2 or less as measured in water, and'}, '(c) optionally, a photosensitizer, and, 'providing a polymeric layer comprising a reactive composition that comprises{'sub': 'max', 'pattemwise exposing the polymeric layer to radiation having a λof at least 150 nm and up to and including 450 nm, to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer with pendant—arylene-XH groups,'}optionally heating the polymeric layer simultaneously with or after patternwise exposing the polymeric layer ...

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Номер записи: 63
07-05-2015 дата публикации

SUBSTRATE AND TOUCH PANEL MEMBER USING SAME

Номер: US20150125680A1
Автор: Araki Hitoshi, Okazawa Toru, Suwa Mitsuhito
Принадлежит: Toray Industries, Inc.

The present invention provides a substrate comprising a region where thin films are laminated on a transparent ground substrate, which thin films are, in the order mentioned from the upper surface of the substrate, an ITO thin film (I); an organic thin film (II) having a film thickness of from 0.01 μm to 0.4 μm and a refractive index of from 1.58 to 1.85; and an organic thin film (III) having a film thickness of from 0.7 μm to 20 μm and a refractive index of from 1.46 to 1.56. 1. A substrate comprising a region where thin films are laminated on a transparent ground substrate , which thin films are , in the order mentioned from the upper surface of the substrate ,an indium tin oxide thin film (I);an organic thin film (II) having a film thickness of from 0.01 to 0.4 μm and a refractive index of from 1.58 to 1.85; andan organic thin film (III) having a film thickness of from 0.7 to 20 μm and a refractive index of from 1.46 to 1.56.2. The substrate according to claim 1 , comprising on the upper surface of said organic thin film (III) a region where a transparent adhesive thin film (IV) having a refractive index of from 1.46 to 1.52 is laminated.3. The substrate according to claim 1 , wherein said organic thin film (II) contains metal oxide particles.4. The substrate according to claim 1 , wherein said organic thin film (II) contains a resin selected from the group consisting of polyimides claim 1 , Cardo resins claim 1 , acrylic resins claim 1 , polysiloxanes claim 1 , polybenzoxazoles claim 1 , phenol resins claim 1 , polyamideimides claim 1 , polyethersulfones claim 1 , polyurethanes and polyesters.5. The substrate according to claim 1 , wherein said organic thin film (II) comprises an alkali-soluble group.6. The substrate according to claim 1 , wherein said organic thin film (II) is formed using a resin composition containing a precursor selected from the group consisting of polyimide precursors claim 1 , polyamideimide precursors and polybenzoxazole precursors.7. ...

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Номер записи: 64
07-05-2015 дата публикации

PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMED USING SAME AND DISPLAY PANEL COMPRISING SAME

Номер: US20150125789A1
Автор: CHOI Dongchang, CHOI Kyung Soo, KIM Sunghyun, Lee Sang Chul, Oh Heeyoung, PARK Kwang Han
Принадлежит: LG CHEM, LTD.

The present specification provides a photosensitive resin composition comprising an alkali-soluble binder, a crosslinkable compound, a photopolymerization initiator, a solvent, a coloring agent and an epoxy adhesion promoter. The photosensitive resin composition has excellent insulating properties and light-shielding properties and shows excellent chemical resistance in an etching process and a stripping process. Thus, the photosensitive resin composition can be formed into a thin bezel layer having a gradual taper, and thus can provide an integrated touch sensor that makes it possible to prevent short circuits from occurring in metal wiring and minimize any decrease in resistance resulting from high-temperature processing. 1. A photosensitive resin composition comprising an alkali-soluble binder , a crosslinkable compound , a photopolymerization initiator , a solvent , a colorant and an epoxy adhesion promoter.2. The photosensitive resin composition of claim 1 , further comprising an epoxy binder.3. The photosensitive resin composition of claim 2 , wherein the epoxy binder is selected from the group consisting of a bisphenol type epoxy resin claim 2 , a novolac type epoxy resin claim 2 , a glycidyl ester type epoxy resin claim 2 , a glycidyl amine type epoxy resin claim 2 , a linear aliphatic epoxy resin claim 2 , an alicyclic epoxy resin claim 2 , and a biphenyl type epoxy resin.4. The photosensitive resin composition of claim 2 , wherein the epoxy binder has an epoxide equivalent weight of 5 claim 2 ,000 g/eq or less.5. The photosensitive resin composition of claim 2 , wherein the content of the epoxy binder is 10 to 50 parts by weight based on 100 parts by weight of the binders.6. The photosensitive resin composition of claim 2 , wherein the content of the epoxy binder is 1 to 10 parts by weight based on 100 parts by weight of the photosensitive resin composition.7. The photosensitive resin composition of claim 1 , wherein the epoxy adhesion promoter is ...

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Номер записи: 65
04-05-2017 дата публикации

Method for removing photoresist

Номер: US20170123320A1
Автор: Hui Tian
Принадлежит: BOE Technology Group Co Ltd

A method for removing photoresist comprising: depositing an oxide film on a base substrate on which photoresist has been formed; treating the oxide film by UV light; peeling off the oxide film; and removing the photoresist.

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Номер записи: 66
21-05-2015 дата публикации

PRINTED CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150136466A1
Автор: Pang Jung Youn
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein are a printed circuit board and a method for manufacturing the same. According to a preferred embodiment of the present invention, the printed circuit board includes: an insulating layer having a connection pad; and a resist layer formed on the insulating layer and provided with an opening so that the connection pad is exposed, wherein a wall surface of an opening of the resist layer may have at least one protrusion. 1. A printed circuit board , comprising:an insulating layer having a connection pad; anda resist layer formed on the insulating layer and provided with an opening so that the connection pad is exposed,wherein a wall surface of an opening of the resist layer has at least one protrusion.2. The printed circuit board as set forth in claim 1 , wherein a cross section shape of the opening of the resist layer has an hourglass shape which the opening is converged at the protrusion between an upper surface and a lower surface of the resist layer.3. The printed circuit board as set forth in claim 1 , wherein the opening includes a first portion which is tapered toward the protrusion and the lower surface and a second portion which is tapered toward the protrusion and the upper surface.4. The printed circuit board as set forth in claim 1 , further comprising:a solder ball attached on the connection pad.5. The printed circuit board as set forth in claim 4 , further comprising:a surface treatment layer between the connection pad and the solder ball.6. A method for manufacturing a printed circuit board claim 4 , comprising:preparing an insulating layer having a connection pad; andforming a resist layer having on opening on the insulating layer so that the connection pad is exposed,wherein a wall surface of the opening of the resist layer has at least one protrusion.7. The method as set forth in claim 6 , wherein a cross section shape of the opening of the resist layer has an hourglass shape which the opening is converged at the protrusion between an ...

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Номер записи: 67
21-05-2015 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

Номер: US20150140484A1
Автор: HIRANO Shuji, NIHASHI Wataru, Takizawa Hiroo, YOKOKAWA Natsumi
Принадлежит: FUJIFILM Corporation

There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition. 2. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 ,wherein the content of the repeating unit represented by formula (1-1) is 55 mol % or more based on all repeating units in the resin (A).3. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 ,wherein Ra in formula (1-1) is a methyl group.4. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 ,{'sub': '1', 'wherein Lin formula (1-1) is a single bond.'}5. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1 ,wherein the content of the repeating unit represented by formula (1-2) is from 15 to 65 mol % based on all repeating units in the resin (A).10. A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition claimed in .11. A pattern forming method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in ,'}(ii) a step of exposing the film, and(iii) a step of developing the exposed film by using a developer to form a pattern.12. A pattern forming method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in ,'}(ii) a step of exposing the film, and(iii′) a step of developing the exposed film by using an organic solvent- ...

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Номер записи: 68
21-05-2015 дата публикации

PROCESSING LIQUID SUPPLYING APPARATUS, PROCESSING LIQUID SUPPLYING METHOD AND STORAGE MEDIUM

Номер: US20150140485A1
Автор: Ishimaru Daisuke, Sasa Takashi
Принадлежит:

A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line. 1. A processing liquid supplying apparatus that supplies a processing liquid to a process object via a discharging part , said apparatus comprising:a processing liquid source that supplies a processing liquid;an intermediate tank connected to the processing liquid source via a transport line;a feed line provided between the intermediate tank and the discharging part;an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; anda pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.2. The processing liquid supplying apparatus according to claim 1 , wherein the processing liquid source includes a pressurizing unit that pressurizes the processing liquid in the processing liquid source ...

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Номер записи: 69
21-05-2015 дата публикации

OVERLAY FILM FORMING COMPOSITION AND RESIST PATTERN FORMATION METHOD USING SAME

Номер: US20150140490A1
Автор: Pawlowski Georg, Suzuki Masato, Wang XiaoWei
Принадлежит:

An object of the present invention is to provide a composition enabling to form a topcoat layer capable of preventing outgassing and of keeping deep UV light from impairing pattern shape in a lithographic process with extreme UV light. The object can be achieved by a composition of the invention for forming a topcoat layer. The composition contains a water-soluble polymer comprising hydrophilic groups and deep-UV absorbing groups absorbing light of 170 to 300 nm, and an aqueous solvent. The solvent comprises 70 weight % or more of water. The composition is cast on a resist layer and heated to harden, and thereafter the resist layer is subjected to exposure by use of extreme UV light and then developed to form a pattern. 2. The composition for forming a topcoat layer according to claim 1 , wherein said water-soluble polymer is a copolymer that comprises repeating units having the hydrophilic groups and other repeating units having the deep-UV absorbing groups.3. The composition for forming a topcoat layer according to claim 1 , wherein said deep-UV absorbing groups are selected from the group consisting of substituted phenyl groups claim 1 , unsubstituted phenyl groups claim 1 , substituted naphthyl groups claim 1 , unsubstituted naphthyl groups claim 1 , substituted anthracenyl groups claim 1 , and unsubstituted anthracenyl groups.4. The composition for forming a topcoat layer according to claim 1 , wherein said hydrophilic groups are selected from the group consisting of hydroxyl claim 1 , carboxyl claim 1 , sulfo claim 1 , substituted amino groups claim 1 , unsubstituted amino groups claim 1 , substituted ammonium groups claim 1 , unsubstituted ammonium groups claim 1 , carboxylic acid ester groups claim 1 , sulfonic acid ester groups claim 1 , substituted amide groups claim 1 , unsubstituted amide groups claim 1 , and oxime groups.6. The composition for forming a topcoat layer according to claim 1 , wherein said water-soluble polymer is contained in an amount of ...

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Номер записи: 70
21-05-2015 дата публикации

METHOD OF PATTERNING A BASE LAYER

Номер: US20150140729A1
Автор: FERRO Marc, MALLIARAS George
Принадлежит:

A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer. The method is capable of providing multilayer articles having almost any shape at high resolution without the need for expensive or damaging mechanical or laser cutting. 1. A method of making a structure having a patterned base layer , comprising the steps of:providing a layer of a radiation-sensitive resin;exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin;providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure;treating the first intermediate structure to form a second intermediate structure; andselectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.2. The method according to wherein the layer of radiation-sensitive resin is provided over a carrier substrate claim 1 , and further comprises removal of the second intermediate structure ...

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Номер записи: 71
19-05-2016 дата публикации

FLUID CHANNEL SYSTEM FOR EXAMINING CELLS

Номер: US20160139110A1
Автор: Dietrich Miriam, Zantl Roman
Принадлежит:

A fluid channel system for examining cells may comprise a chamber filled with at least one photopolymerized hydrogel and/or one polymerized photodepolymerizable hydrogel to at least 90% capacity. The chamber may open exclusively towards at least one fluid channel via at least two openings. The at least one fluid channel and the chamber may each be in the form of a hollow space in a substrate, and each fluid channel may have two openings to the outside. In an embodiment, the system may comprise a hollow space in a substrate with at least one photopolymerized hydrogel and/or one polymerized photodepolymerizable hydrogel may be arranged and structured such that at least one fluid channel and a coherent hydrogel structure are formed. The hydrogel structure may adjoin the at least one fluid channel at two separate surface areas and connect to the outside exclusively via the at least one fluid channel. 115.-. (canceled)16. A fluid channel system for examining cells , comprising:a chamber filled with at least one photopolymerized hydrogel and/or one polymerized photodepolymerizable hydrogel to at least 90% of capacity,wherein the chamber is open via at least two openings exclusively towards at least one fluid channel,wherein the at least one fluid channel and the chamber are each embodied in the form of a hollow space in a substrate, andwherein each fluid channel has two openings to the outside.17. The fluid channel system according to claim 16 , wherein the chamber is completely filled to capacity with the at least one photopolymerized hydrogel and/or the one polymerized photodepolymerizable hydrogel.18. The fluid channel system according to claim 16 , wherein the at least one fluid channel comprises exactly one fluid channel claim 16 , andwherein the chamber is open towards the fluid channel at a first partial area of the fluid channel and a second partial area of the fluid channel.19. The fluid channel system according to claim 16 , wherein the at least one fluid ...

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Номер записи: 72
04-06-2015 дата публикации

OPTICAL WAVELENGTH DISPERSION DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20150153648A1
Автор: Ko Cheng-Hao
Принадлежит:

An optical wavelength dispersion device includes a first substrate; an input unit formed on the first substrate having a slit for receiving an optical signal; a grating formed on the first substrate for producing a first light beam form the optical signal for outputting; and a second substrate covered on the top of the input unit and the grating; wherein the input unit and the grating are formed from a photo-resist layer by high energy light source exposure. 1. A method of manufacturing an optical wavelength dispersion device , the method comprising the steps of:(a) providing a first substrate;(b) forming a photo-resist layer on said first substrate;(c) exposing said photo-resist layer by high energy light source through a high-energy-light-source mask, wherein a wavelength of said high energy light source is from 0.01 to 100 nm;(d) developing said photo-resist layer for forming an input unit with a slit and a grating;(e) coating a reflective layer on a surface of each of said first substrate, said input unit and said grating; and(f) covering a second substrate on top of said input unit and said grating.2. The method claim 1 , as recited in claim 1 , wherein said high energy light source is selected from a group consisting of X-ray claim 1 , soft X-ray and EUV (extreme UV).3. The method claim 1 , as recited in claim 1 , wherein a width of said slit is from 5 to 500 μm.4. The method claim 1 , as recited in claim 1 , wherein said grating has a concave claim 1 , convex or planar profile with pitches selected from a group consisting of laminar type claim 1 , saw-tooth type claim 1 , blaze type claim 1 , sinusoidal type and a combination of said laminar claim 1 , saw-tooth claim 1 , blaze claim 1 , and sinusoidal types.5. The method claim 2 , as recited in claim 2 , wherein said grating has a concave claim 2 , convex or planar profile with pitches selected from a group consisting of laminar type claim 2 , saw-tooth type claim 2 , blaze type claim 2 , sinusoidal type and ...

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Номер записи: 73
02-06-2016 дата публикации

DEVELOPING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND DEVELOPING APPARATUS

Номер: US20160154311A1
Автор: Kubota Minoru, KYODA Hideharu, MUTA Koshi
Принадлежит:

A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle. 1. A developing method for supplying a developing solution onto a substrate and developing a resist film formed on the substrate and provided with a predetermined exposed pattern , comprising:forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of the substrate;after forming the liquid pool, forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and', 'moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the ...

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Номер записи: 74
11-06-2015 дата публикации

PATTERN FORMING METHOD, AND, METHOD FOR PRODUCING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, EACH USING THE SAME

Номер: US20150160555A1
Автор: MOMOTA Makoto, SUGIYAMA Shinichi, UEBA Ryosuke, Yamanaka Tsukasa
Принадлежит: FUJIFILM Corporation

The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern. 1. A pattern forming method comprising:(i) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent,(ii) exposing the first film,(iii) developing the exposed first film using a developer including an organic solvent to form a negative tone pattern, and(iv) forming a second film on the substrate so as to cover the periphery of the negative tone pattern.3. The pattern forming method according to claim 2 , wherein the content of the repeating unit represented by the general formula (AI) is 40% by mole or more claim 2 , based on all the repeating units of the resin (A).4. The pattern forming method according to claim 1 , further comprising (v) heating the negative tone pattern claim 1 , after (iii) developing the exposed first film using a developer including an organic solvent to form a negative tone pattern and before (iv) forming the second film on the substrate so as to cover the periphery of the negative tone pattern.5. The pattern forming method according to claim 4 , wherein the heating temperature for (v) heating the negative tone pattern is 150° C. or higher.6. The pattern forming method according to claim 1 , wherein the second film is formed by a ...

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Номер записи: 75
11-06-2015 дата публикации

RESIST PATTERN-FORMING METHOD

Номер: US20150160556A1
Автор: ANNO Yusuke, FURUKAWA Taiichi, Minegishi Shin-ya, MORI Takashi, SAKAKIBARA Hirokazu, TAKANASHI Kazunori, Tanaka Hiromitsu
Принадлежит: JSR Corporation

A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent. 18-. (canceled)9. A resist pattern-forming method comprising:applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film, the resist underlayer film-forming composition comprising (A) a polysiloxane; (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid; and', '(a2) a fluorine-containing polymer,, 'applying a radiation-sensitive resin composition to the resist underlayer film to form a resist film, the radiation-sensitive resin composition comprisingexposing the resist film; anddeveloping the exposed resist film using a developer that comprises an organic solvent.10. The resist pattern forming method according to claim 9 , wherein the polysiloxane (A) is a hydrolysis-condensation product of at least one silane compound comprising a silane compound shown by a formula (i) claim 9 ,{'br': None, 'sup': 'A', 'sub': a', '4-a, 'RSiX\u2003\u2003(I)'}{'sup': A', 'A', 'A', 'A', 'A', 'B', 'B', 'A', 'A, 'wherein Rrepresents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, an alkenyl group, an aryl group, or a cyano group; the alkyl group represented by Ris unsubstituted, or at least one hydrogen atom of the alkyl group represented by Ris substituted with a glycidyloxy group, an oxetanyl group, an acid anhydride group, or a cyano group; the aryl group represented by Ris ...

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Номер записи: 76
11-06-2015 дата публикации

Semiconductor Device Process Filter and Method

Номер: US20150160558A1
Автор: Chang Ching-Yu, Lo Kuan-Hsin
Принадлежит:

In accordance with an embodiment, a method of filtering a process fluid such as a negative tone developer is provided. The negative tone developer is introduced to a filter membrane that comprises a fluorine-based polymer. The negative tone developer is then filtered through the filter membrane. By using these materials and methods, polyethylene from the filter membrane will not contaminate the photoresist during development and reduce defects that arise from polyethylene contamination. 1. A method of filtering a process fluid , the method comprising:introducing a negative tone developer to a filter membrane, wherein the filter membrane comprises a first fluorine-based polymer; andfiltering the negative tone developer through the filter membrane.2. The method of claim 1 , further comprising:storing the negative tone developer in a first process tank, wherein the first process tank comprises a second fluorine-based polymer; andmoving the negative tone developer to a process unit through a pipe, wherein the pipe comprises a third fluorine-based polymer.3. The method of claim 2 , further comprising:developing a photoresist with the negative tone developer; andusing the photoresist as a mask to form fins from a substrate.4. The method of claim 2 , further comprising wetting the filter membrane prior to the filtering the negative tone developer through the filter membrane.5. The method of claim 4 , wherein the first fluorine-based polymer comprises polytetrafluorethylene claim 4 , perfluoroalkoxy claim 4 , fluorinated ethylene propylene claim 4 , poly(ethene-co-tetrafluoroethene) claim 4 , or poly(vinylidene fluoride).6. The method of claim 2 , wherein the filter is located within the process unit.7. The method of claim 1 , wherein the negative tone developer does not come into contact with high-density polyethylene throughout the method.8. A method of filtering a process fluid claim 1 , the method comprising:filtering a negative tone developer with a first filter to ...

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Номер записи: 77
07-06-2018 дата публикации

PHOTOLITHOGRAPHY MASK PLATE

Номер: US20180157163A1
Автор: An Dong, CHEN MO, FAN SHOU-SHAN, JIN YUAN-HAO, LI QUN-QING, ZHANG LI-HUI
Принадлежит:

A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer on the patterned chrome layer. 1. A photolithography mask plate , comprising:a substrate;a patterned chrome layer on a surface of the substrate;a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; anda cover layer on the carbon nanotube layer.2. The photolithography mask plate as claimed in claim 1 , wherein a transmittance of the substrate to ultraviolet light is higher than 60%.3. The photolithography mask plate as claimed in claim 1 , wherein the carbon nanotube layer is a free-standing structure and comprises a plurality of carbon nanotubes joined end to end by van der Waals attraction forces along a length direction of the plurality of carbon nanotubes.4. The photolithography mask plate as claimed in claim 1 , wherein the carbon nanotube layer comprises a carbon nanotube film claim 1 , and the carbon nanotube film comprises a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attraction forces.5. The photolithography mask plate as claimed in claim 4 , wherein the carbon nanotube layer comprises two stacked carbon nanotube films claim 4 , and an angle between aligned directions of carbon nanotubes in two adjacent carbon nanotube films is from 0 degrees to about 90 degrees.6. The photolithography mask plate as claimed in claim 1 , wherein the cover layer comprise a material selected from the group consisting of gold claim 1 , nickel claim 1 , titanium claim 1 , iron claim 1 , aluminum claim 1 , chromium claim 1 , alumina claim 1 , magnesium oxide claim 1 , zinc oxide claim 1 , hafnium oxide claim 1 , and metal sulfide.7. A method ...

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Номер записи: 78
07-06-2018 дата публикации

PHOTOLITHOGRAPHY MASK PLATE

Номер: US20180157164A1
Автор: An Dong, CHEN MO, FAN SHOU-SHAN, JIN YUAN-HAO, LI QUN-QING, ZHANG LI-HUI
Принадлежит:

A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer located on the substrate; a patterned chrome layer located on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer located on the patterned chrome layer. 1. A photolithography mask plate , comprising:a substrate;a carbon nanotube layer on the substrate;a patterned chrome layer on the carbon nanotube layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; anda cover layer on the patterned chrome layer.2. The photolithography mask plate as claimed in claim 1 , wherein a transmittance of the substrate to ultraviolet light is higher than 60%.3. The photolithography mask plate as claimed in claim 1 , wherein the carbon nanotube layer is a free-standing structure and comprises a plurality of carbon nanotubes joined end to end by van der Waals attraction forces along a length direction of the plurality of carbon nanotubes.4. The photolithography mask plate as claimed in claim 1 , wherein the carbon nanotube layer comprises a carbon nanotube film claim 1 , and the carbon nanotube film comprises a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attraction forces.5. The photolithography mask plate as claimed in claim 4 , wherein the carbon nanotube layer comprises at least two stacked carbon nanotube films claim 4 , and an angle between aligned directions of the carbon nanotubes in two adjacent carbon nanotube films is from 0 degrees to about 90 degrees.6. The photolithography mask plate as claimed in claim 1 , wherein the cover layer comprise a material selected from the group consisting of gold claim 1 , nickel claim 1 , titanium claim 1 , iron claim 1 , aluminum claim 1 , chromium claim 1 , alumina claim 1 , magnesium oxide claim 1 , zinc oxide claim 1 , hafnium oxide claim 1 , and ...

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Номер записи: 79
14-05-2020 дата публикации

SECONDARY IMAGING OPTICAL LITHOGRAPHY METHOD AND APPARATUS

Номер: US20200150538A1
Автор: Gao Ping, KONG Weijie, Luo Xiangang, WANG Changtao, WANG Yanqin, ZHAO Zeyu
Принадлежит:

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate. 1. A secondary imaging optical lithography method comprising:contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer;irradiating the photosensitive layer of the flexible transparent transfer substrate through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer of the flexible transparent transfer substrate;coating a device substrate for fabricating devices with a photoresist;contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely;irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer of the flexible transparent ...

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Номер записи: 80
18-06-2015 дата публикации

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD, PRINTED CIRCUIT BOARD, AND METHOD FOR PRODUCING SAME

Номер: US20150168832A1
Автор: Fujita Saki, Nakagawara Hidetaka, Okada Shintaro, Ueda Akifumi, WATANABE Kazuo, WATANABE Shigeki
Принадлежит: MICRO PROCESS INC.

The photosensitive resin composition of the present invention contains a vinyl-based (co)polymer (I) obtained by polymerizing a monomer mixture (α) containing a vinyl-based monomer (a) having a phenolic hydroxyl group, a vinyl-based copolymer (II) having a weight-average molecular weight of 15,000 to 120,000, obtained by polymerizing a monomer mixture (β) containing a vinyl-based monomer (b) represented by CH═CRCOO(RO)R(wherein R=a hydrogen atom or a methyl group, R=a hydrocarbon group having a carbon number of 1 to 4, R=a hydrogen atom or a methyl group, and k=1 to 90) and a carboxyl group-containing vinyl-based monomer (c), a photosensitive substance (III), and a compound (IV) which is a specific aromatic polyhydroxy compound. 2. (canceled)3. The photosensitive resin composition according to claim 1 , wherein a proportion of the 2-methoxyethyl acrylate in the monomer mixture (β) is from 5 to 30 mol %.4. The photosensitive resin composition according to claim 1 , wherein the photosensitive substance (III) is a quinonediazide compound.5. The photosensitive resin composition according to claim 4 , wherein the quinonediazide compound is an ester of an aromatic polyhydroxy compound having 1 to 3 aromatic rings claim 4 , and 1 claim 4 ,2-naphthoquinonediazide-5-sulfonic acid and/or 1 claim 4 ,2-naphthoquinonediazide-4-sulfonic acid.8. (canceled)9. A photosensitive dry film claim 1 , comprising a resist film formed from the photosensitive resin composition according to formed on a surface of a support film.10. A pattern formation method comprising a step of forming a resist film composed of the photosensitive resin composition according to on a surface of a substrate claim 1 , a step of forming a latent image by exposing the resist film claim 1 , and a step of forming a resist pattern by subjecting the resist film with the latent image formed thereon to a developing treatment with an alkaline developing solution.11. A printed circuit board produced using the ...

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Номер записи: 81
18-06-2015 дата публикации

LITHOGRAPHIC PRINTING PLATE PRECUSOR

Номер: US20150168837A1
Автор: Loccufier Johan, STEENACKERS Marin, Verbrugghe Sam
Принадлежит:

A negative-working lithographic printing plate precursor includes a coating containing a photopolymerizable layer and optionally an intermediate layer between the photopolymerizable layer and the support, wherein the coating further includes a polysiloxane, the polysiloxane being present in the photopolymerizable layer and/or in the optional intermediate layer, and the polysiloxane is obtained by reacting at least one organosilicon compound represented by the general Formula (I) and at least one organosilicon compound represented by the general Formula (II): 115-. (canceled)17. The precursor according to claim 16 , wherein the polysiloxane is present in the photopolymerizable layer.18. The precursor according to claim 16 , wherein Rincludes two claim 16 , three claim 16 , four claim 16 , or five free radical polymerizable groups.19. The precursor according to claim 16 , wherein the free radical polymerizable group is represented by an ethylenically unsaturated group.20. The precursor according to claim 16 , wherein the free radical polymerizable group includes at least one divalent linking group.21. The precursor according to claim 16 , wherein the hydrophilic group is selected from a hydrocarbon group substituted with at least one hydroxyl group claim 16 , or an oligoalkylene oxide group.22. The precursor according to claim 16 , wherein Lrepresents an alkylene claim 16 , cycloalkylene claim 16 , arylene claim 16 , heteroarylene claim 16 , —O—(CH)— claim 16 , —S—(CH)— claim 16 , —(CH)—O—CO—(CH)— claim 16 , —CS—(CH)— claim 16 , —CO—(CH)— claim 16 , —O—CO—NH— claim 16 , —(CH)—CO—NH— claim 16 , —(CH)—NH—CO— claim 16 , —NR*—CO—NH— claim 16 , >N—CO—NH— claim 16 , —NR*—CS—NH— claim 16 , or combinations thereof;k and l independently represent 0, 1, or an integer greater than 1; andR* represents hydrogen or a methyl group.23. The precursor according to claim 16 , wherein L′ represents a —CO—NH-aliphatic group- claim 16 , —NH—CO—NH-aliphatic group- claim 16 , —N(CH)—CO—NH- ...

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Номер записи: 82
11-09-2014 дата публикации

PATTERNING PROCESS AND RESIST COMPOSITION

Номер: US20140255843A1
Автор: FUKUSHIMA Masahiro, Katayama Kazuhiro, KOBAYASHI Tomohiro, Kumaki Kentaro, LIN Chuanwen, OHASHI Masaki
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R—COOC(CF)—CHSORRRS wherein Ris a monovalent hydrocarbon group, R, Rand Rare an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.

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Номер записи: 83
25-06-2015 дата публикации

PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME

Номер: US20150177621A1
Автор: Kim Going Sik, Lee Jeong Woo
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein is a printed circuit board, including: a base substrate on which a circuit layer is formed; and multi-layer insulating layers formed in a plurality of layers on the base substrate, including the circuit layer, each of the plurality of layers being formed to have a step structure, wherein the multi-layer insulating layer is formed of heterogeneous materials. 1. A method of manufacturing a printed circuit board , comprising:preparing a base substrate on which a circuit layer is formed;forming a multi-layer insulating layer formed in a plurality of layers on the base substrate, including the circuit layer, each of the plurality of layers being formed of heterogeneous materials; andforming a step structure on the multi-layer insulating layer by performing exposing and developing processes on each of the plurality of layers of the multi-layer insulating layer.2. The method as set forth in claim 1 , wherein each of the plurality of layers of the multi-layer insulating layer is formed of heterogeneous materials having different developing selectivities claim 1 , andin the forming of the step structure, each of the plurality of layers of the multi-layer insulating layer is subjected to the develop process by differently applying conditions of a developer based on the developing selectivity of the corresponding insulating layer.3. The method as set forth in claim 2 , wherein each of the plurality of layers of the multi-layer insulating layer is formed of a negative type photoresist of heterogeneous materials.4. The method as set forth in claim 1 , wherein each of the plurality of layers of the multi-layer insulating layer is formed of heterogeneous materials having different exposure selectivities claim 1 , andin the forming of the step structure, each of the plurality of layers of the multi-layer insulating layer is subjected to the exposing process by differently applying conditions of a light quantity based on the exposure selectivity of the corresponding ...

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Номер записи: 84
25-06-2015 дата публикации

MASK PATTERN GENERATION METHOD

Номер: US20150178431A1
Автор: Arai Tadashi
Принадлежит:

A method for generating a pattern of a mask includes obtaining data of a plurality of polygons representing a plurality of pattern elements, grouping polygons which overlap or contact with each other among the plural polygons in one group, not setting an evaluation position for evaluating an image of a pattern of the one group on a line segment of sides which overlap or contact with each other among sides of the polygon of the one group, and setting an evaluation position at a portion except for the line segment, and repeating calculating the image of the pattern of the one group, evaluating the calculated image at the set evaluation position, and correcting the pattern based on a result of the evaluating, and generating the pattern of the mask based on a result of the repeating step. 1. A method for generating a pattern of a mask used for exposing a substrate , the method comprising the following steps performed by a processor ,obtaining data of a plurality of polygons representing a plurality of pattern elements,grouping polygons which overlap or contact with each other among the plural polygons in one group, not setting an evaluation position for evaluating an image of a pattern of the one group on a line segment of sides which overlap or contact with each other among sides of the polygon of the one group, and setting an evaluation position at a portion except for the line segment,repeating calculating the image of the pattern of the one group, evaluating the calculated image at the set evaluation position, and correcting the pattern based on a result of the evaluating, andgenerating the pattern of the mask based on a result of the repeating.2. The method according to claim 1 , wherein the evaluation position is a position for evaluating the image in a direction different from a direction of sides which overlap or contact with each other among sides of the polygon of the one group.3. The method according to claim 2 , wherein the evaluation position is a position ...

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Номер записи: 85
02-07-2015 дата публикации

POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME

Номер: US20150185609A1
Автор: INABE Haruki, KANDA Hiromi, KANNA Shinichi
Принадлежит: FUJIFILM Corporation

A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid. 1. A positive resist composition comprising:(A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid;(B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (x) an alkali-soluble group;', '(y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and', '(z) a group which decomposes by an action of an acid, and, '(C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z)(F) a solvent,wherein the fluorine-containing compound (C) has a molecular weight of from 1,000 to 100,000, andan amount of the fluorine-containing compound (C) is from 0.1 to 10% by mass with respect to a total solid component in the positive resist composition.2. The positive resist composition according to claim 1 ,wherein the fluorine-containing compound (C) is an alkali-soluble compound containing an alkyl group having a fluorine atom and 1 to 4 carbon atoms, a cycloalkyl group having a fluorine atom or an aryl group having a fluorine atom.3. The positive resist composition according to claim 1 ,wherein the fluorine-containing compound (C) has an alcoholic hydroxyl group, andan alcohol moiety for the alcoholic hydroxyl group is a fluorinated alcohol.5. ...

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Номер записи: 86
18-09-2014 дата публикации

METHOD OF MAKING A LITHOGRAPHIC PRINTING PLATE

Номер: US20140272713A1
Автор: LENAERTS Jens, SINNESAEL Jan, Vervloet Ludovicus Hendrik
Принадлежит: AGFA GRAPHICS NV

A method of making a lithographic printing plate including the steps of a) image-wise exposing a lithographic printing plate precursor including a light or heat sensitive coating on a support having a hydrophilic surface or which is provided with a hydrophilic layer, and b) processing the precursor consecutively with a first solution and a second solution thereby removing the coating from the support in the non-printing areas. The first and second solutions are provided by a cascade system such that the second solution overflows into the first solution and the first solution overflows into a container to be further treated as waste, and the second solution is regenerated by adding a replenishing solution or a mixture of replenishing solutions at a rate of at least 5 ml/mof treated precursor and at most 30 ml/mof treated precursor. 114-. (canceled)15. A method of making a lithographic printing plate , the method comprising the steps of:image-wise exposing a lithographic printing plate precursor including a light or heat sensitive coating on a support having a hydrophilic surface or which is provided with a hydrophilic layer; andprocessing the precursor consecutively with a first solution and a second solution so as to remove the coating from the support at non-printing areas; whereinthe first and second solutions are provided by a cascade system such that the second solution overflows into the first solution and the first solution overflows into a container to be treated as waste;{'sup': 2', '2, 'the second solution is regenerated by adding a replenishing solution or a mixture of replenishing solutions at a rate of at least 5 ml/mof treated precursor and at most 30 ml/mof treated precursor;'}the first and second solutions are circulated, respectively, by a first and a second liquid conveying system; [{'br': None, 'i': V', 'A, 'min=[+(processing width/0.95 m)]·liter\u2003\u2003(formula 1)'}, {'br': None, 'i': V', 'B, 'max=[+(processing width/0.95 m)]·liter\u2003\u2003 ...

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Номер записи: 87
16-07-2015 дата публикации

NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME

Номер: US20150198883A1
Автор: Hatakeyama Jun, IIO Masashi, Urano Hiroyuki
Принадлежит:

A negative resist composition containing as base resin a novolak resin having repeating unit “a”, 9. The negative resist composition according to claim 1 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 1 ,000.10. The negative resist composition according to claim 2 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 2 ,000.11. The negative resist composition according to claim 3 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 3 ,000.12. The negative resist composition according to claim 4 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 4 ,000.13. The negative resist composition according to claim 5 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 5 ,000.14. The negative resist composition according to claim 6 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 6 ,000.15. The negative resist composition according to claim 7 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 7 ,000.16. The negative resist composition according to claim 8 , wherein weight-average molecular weight of the novolak resin is in the range of 400 to 500 claim 8 ,000.17. The negative resist composition according to claim 1 , wherein the negative resist composition is a chemically amplified resist composition which contains an acid generator.18. The negative resist composition according to claim 1 , wherein the negative resist composition contains any one or more selected from an organic solvent claim 1 , a basic compound claim 1 , a dissolution controlling agent claim 1 , a surfactant claim 1 , and a crosslinking agent.19. A patterning process claim 1 , wherein the patterning process comprises a step of applying the negative resist composition according ...

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Номер записи: 88
16-07-2015 дата публикации

METHOD FOR MANUFACTURING SUBSTRATE FOR PACKAGE

Номер: US20150198888A1
Автор: HONG Dae Jo, Hong Myeong Ho, Lee Chang Bo
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Embodiments of the invention provide a method for manufacturing a substrate for a package, in which the method includes forming a solder resist layer on an uncoated substrate having electrode pads formed thereon to cover the electrode pads, and exposing some regions by dividing the solder resist layer into regions including a first region covering some or all of the electrode pads and a second region formed out of the first region and exposing some of the regions. The method further includes developing the solder resist layer including an exposed region and an unexposed region with high energy light, so that a remaining height of the first region is lower than that of the second region and at least upper surfaces of the electrode pads in the first region are exposed. 1. A method for manufacturing a substrate for a package , the method comprising:forming a solder resist layer on an uncoated substrate comprising electrode pads formed thereon to cover the electrode pads;exposing some regions by dividing the solder resist layer into regions comprising a first region covering some or all of the electrode pads and a second region formed out of the first region and exposing some of the regions; anddeveloping the solder resist layer including an exposed region and an unexposed region with high energy light, so that a remaining height of the first region is lower than that of the second region and at least upper surfaces of the electrode pads in the first region are exposed.2. The method according to claim 1 , wherein in the developing of the solder resist layer with the high energy light claim 1 , a developing depth of the first region is formed to be deeper than that of the second region according to a difference between internal bonding strengths of the solder resist layer in the exposed region and the unexposed region.3. The method according to claim 2 , wherein in the exposing of some regions claim 2 , the region(s) other than the first region of the solder resist layer ...

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Номер записи: 89
05-07-2018 дата публикации

CONVEYOR, DEVELOPING SYSTEM AND METHOD

Номер: US20180188653A1
Автор: CHEN PENG, Cheng Xiaohui, Yang Hui
Принадлежит:

The present disclosure provides a conveyor, a developing system and a developing method. The conveyor includes a conveying unit configured to convey a substrate and having a plurality of conveying portions. The plurality of conveying portions includes a first tilt conveying portion and a second tilt conveying portion. One of a conveying surface of the first tilt conveying portion and a conveying surface of the second tilt conveying portion is a rising surface configured to raise the substrate gradually, and the other one of the conveying surfaces is a falling surface configured to bring down the substrate gradually. 1. A conveyor , comprising a conveying unit configured to convey a substrate and having a plurality of conveying portions , the plurality of conveying portions comprising a first tilt conveying portion and a second tilt conveying portion , whereinone of a conveying surface of the first tilt conveying portion and a conveying surface of the second tilt conveying portion is a rising surface configured to raise the substrate gradually, and the other one of the conveying surfaces is a falling surface configured to bring down the substrate gradually.2. The conveyor according to claim 1 , wherein each of the conveying portions comprises a plurality of rollers claim 1 , and axes of the rollers of the conveying unit are all located in a same plane claim 1 , said plane being a first plane.3. The conveyor according to claim 2 , wherein the plurality of conveying portions further comprises a third conveying portion between the first tilt conveying portion and the second tilt conveying portion claim 2 , and the third conveying portion is configured to convey the substrate in a plane in parallel with the first plane.4. The conveyor according to claim 2 , wherein the plurality of rollers of the first tilt conveying portion are a plurality of first rollers claim 2 , and diameters of the plurality of first rollers are gradually decreased one by one in a conveying ...

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Номер записи: 90
23-07-2015 дата публикации

COLOR FILTER SUBSTRATE AND METHOD FOR PRODUCING SAME

Номер: US20150205019A1
Автор: Kawanishi Takafumi
Принадлежит: SHARP KABUSHIKI KAISHA

Provided are: a color filter substrate that can improve the uniformity of thickness of color filters, and a method of manufacturing the color filter substrate. The method of manufacturing a color filter substrate includes: forming a plurality of photoresist films in layers on a transparent substrate; exposing said plurality of photoresist films via a photomask; forming a pattern having an opening by developing the plurality of photoresist films after exposure; and discharging ink into the opening. The photosensitivities of the plurality of photoresist films differ from each other. 1: A method of manufacturing a color filter substrate , said method comprising:(a) layering a plurality of photoresist films on a transparent substrate;(b) exposing said plurality of photoresist films via a photomask;(c) forming partition walls having an opening defined therebetween by developing said plurality of photoresist films after exposure; and(d) discharging ink into said openings,wherein photosensitivities of the plurality of photoresist films differ from one another.2: The method of manufacturing a color filter substrate according to claim 1 ,wherein each of said plurality of photoresist films is of a negative type, andwherein said photosensitivities of the plurality of photoresist films become smaller with proximity to said transparent substrate.3: The method of manufacturing a color filter substrate according to claim 1 ,wherein each of said plurality of photoresist films is of a positive type, andwherein said photosensitivities of the plurality of photoresist films become larger with proximity to said transparent substrate.4: The method of manufacturing a color filter substrate according claim 1 ,wherein said photomask includes a transmissive region, a light-shielding region, and a light-modulating region,wherein a transmittance of said light-modulating region is lower than a transmittance of said transmissive region and higher than a transmittance of said light-shielding ...

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Номер записи: 91
23-07-2015 дата публикации

PHOTORESIST COMPOSITION

Номер: US20150205204A1
Автор: Chun Jun, JU Jin-Ho, KIM Byung-Uk, KIM Dong-Myung, Kim Ji-Hyun, Kim Jin-Sun, PARK Jeong-Min, PARK Sung-Kyun, YEO Tai-Hoon, Youn Hyoc-Min
Принадлежит:

A photoresist composition includes an acid-labile polymer that is decomposable by reaction with an acid, a photoacid generator, an organic base having a pKvalue of 9 or less and a solvent. Based on 100 parts by weight of the acid-labile polymer, the photoacid generator is about 1 to about 30 parts by weight, and the organic base is about 0.1 to about 5 parts by weight. The solvent is about 50 to about 90 wt % based on the total weight of the composition. 1. A photoresist composition , comprising:an acid-labile polymer that is decomposable by reaction with an acid;a photoacid generator;{'sub': 'a', 'an organic base having a pKvalue of 9 or less; and'}a solvent,wherein, based on 100 parts by weight of the acid-labile polymer, the photoacid generator is about 1 to about 30 parts by weight, and the organic base is about 0.1 to about 5 parts by weight, andthe solvent is about 50 to about 90 wt % based on the total weight of the composition.2. The photoresist composition as claimed in claim 1 , wherein the organic base includes at least one selected from the group of aniline claim 1 , triethanolamine claim 1 , p-toluidine claim 1 , and diethanolamine.6. The photoresist composition as claimed in claim 1 , wherein the photoacid generator includes one or more selected from the group of a sulfonium salt-based compound claim 1 , an iodonium salt-based compound claim 1 , a sulfonyldiazomethane-based compound claim 1 , an N-sulfonyloxyimide-based compound claim 1 , and a sulfonate-based compound.7. The photoresist composition as claimed in claim 1 , further comprising at least one of a melamine-based crosslinking agent and a silane coupling agent.8. A method of forming a device pattern for a display claim 1 , the method comprising:forming an etching target material layer on a substrate;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'coating the photoresist composition as claimed in on the etching target material layer to form a photoresist layer; and'}subjecting the ...

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Номер записи: 92
25-09-2014 дата публикации

PATTERNING METHOD USING THIOSULFATE POLYMER AND METAL NANOPARTICLES

Номер: US20140287364A1
Автор: Dirmyer Matthew, Donovan Kevin M., Shukla Deepak
Принадлежит:

A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be used in methods to form predetermined patterns of metal nanoparticles. 1. A method comprising:providing a polymeric layer comprising a non-crosslinked thiosulfate polymer that also comprises pendant organic charged groups,photochemically reacting the non-crosslinked thiosulfate polymer to provide polymer layer areas comprising a crosslinked polymer having disulfide groups in the polymeric layer,optionally washing the polymeric layer to remove any non-crosslinked thiosulfate polymer while leaving the crosslinked polymer having disulfide groups in the polymeric layer, andcontacting the polymeric layer with a dispersion of metal nanoparticles to complex the metal nanoparticles with the crosslinked polymer having disulfide groups.2. The method of claim 1 , comprising contacting the polymeric layer with a dispersion of gold claim 1 , silver claim 1 , platinum claim 1 , palladium claim 1 , or copper nanoparticles.3. The method of claim 1 , comprising photochemically reacting the non-crosslinked thiosulfate polymer to provide polymer layer areas in a predetermined pattern that comprise a crosslinked polymer having disulfide groups.4. The method of claim 1 , wherein the polymeric layer further comprises an electron-accepting photosensitizer component.5. The method of claim 1 , wherein washing the polymeric layer to remove the non-crosslinked thiosulfate polymer is carried out using an aqueous solution.6. The method of claim 1 , wherein the polymeric layer further comprises an electron-accepting photosensitizer component that is a covalently-connected component of the non-crosslinked thiosulfate polymer.7. The method of claim 1 , wherein the non-crosslinked thiosulfate polymer is a copolymer comprising claim 1 , in random order: (a) recurring units comprising ...

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Номер записи: 93
25-09-2014 дата публикации

FORMING PATTERNS USING THIOSULFATE POLYMER COMPOSITIONS

Номер: US20140287365A1
Автор: Donovan Kevin M., Mis Mark R., Shukla Deepak
Принадлежит:

A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles and used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. 1. A method of forming a pattern in a polymeric composition , the method comprising:providing a polymeric layer comprising a non-crosslinked thiosulfate polymer,photochemically reacting the non-crosslinked thiosulfate polymer to provide a crosslinked polymer having disulfide groups in a predetermined pattern in the polymeric layer, leaving non-crosslinked thiosulfate polymer in area(s) of the polymeric layer outside of the predetermined pattern,optionally washing the polymeric layer to remove the non-crosslinked thiosulfate polymer while leaving the crosslinked polymer in the predetermined pattern, andeither:(i) treating the crosslinked polymer with a disulfide-reactive material, or(ii) when the polymeric layer further comprises a redox active metal ion, treating the predetermined pattern with a metal ion that is capable of reacting with the redox active metal ion.2. The method of claim 1 , wherein the polymeric layer further comprises an electron-accepting photosensitizer component.3. The method of claim 1 , comprising treating the crosslinked polymer with a disulfide-reactive metal.4. The method of claim 3 , wherein the disulfide-reactive metal is a silver claim 3 , palladium claim 3 , nickel claim 3 , gold claim 3 , or copper metal.5. The method of claim 1 , wherein photochemically reacting of the non-crosslinked thiosulfate polymer is carried out in predetermined pattern through a mask using actinic radiation.6. The method of claim 1 , wherein washing the polymeric layer to remove the non-crosslinked thiosulfate polymer is carried ...

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Номер записи: 94
23-07-2015 дата публикации

WIRING BOARD AND METHOD FOR MANUFACTURING SAME

Номер: US20150208501A1
Автор: HAYASHI Takahiro, ITO Tatsuya, MORI Seiji, Nagai Makoto, Nishida Tomohiro, WAKAZONO Makoto
Принадлежит:

To provide a wiring board excellent in connection reliability with a semiconductor chip. A first buildup layer where resin insulating layers and and a conductor layer are laminated is formed at a substrate main surface side of an organic wiring board . The conductor layer for an outermost layer in the first buildup layer includes a plurality of connecting terminal portions for flip-chip mounting a semiconductor chip. The plurality of connecting terminal portions is exposed through an opening portion of a solder resist layer . Each connecting terminal portion includes a connection region for a semiconductor chip and a wiring region disposed to extend from the connection region along the planar direction. The solder resist layer includes, within the opening portion , a side-surface covering portion that covers the side surface of the connecting terminal portion and a projecting wall portion that is integrally formed with the side-surface covering portion and disposed to project so as to intersect with the connection region 1. A wiring board , comprisinga laminated body where respective one or more layers of insulating layers and conductor layers are laminated, the conductor layer in an outermost layer of the laminated body including a connecting terminal portion disposed in a mounting area for a semiconductor chip so as to flip-chip mount the semiconductor chip, a solder resist layer being disposed as the insulating layer in an outermost layer of the laminated body, the connecting terminal portion including a surface exposed through an opening portion formed in the solder resist layer, whereinthe connecting terminal portion includes a connection region and a wiring region, the connection region being to connect to a connecting terminal of the semiconductor chip via solder, the wiring region being disposed to extend from the connection region along a planar direction, andthe solder resist layer includes a side-surface covering portion and a projecting wall portion, the ...

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Номер записи: 95
30-07-2015 дата публикации

System and Method for Shifting Critical Dimensions of Patterned Films

Номер: US20150212421A1
Автор: deVilliers Anton J., FULFORD Daniel
Принадлежит:

Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes. 1. A method for patterning a substrate , the method comprising:identifying a critical dimension signature that spatially characterizes observed critical dimension values of structures on substrates corresponding to a substrate to be processed;coating the substrate with a patterning film, the patterning film being at least initially radiation-sensitive in that a solubility of the patterning film is changeable by exposure to actinic radiation;projecting a pattern of electromagnetic radiation onto the patterning film coated on the substrate, the pattern of electromagnetic radiation being projected using a digital pixel-based projection system having an array of independently addressable projection points, the projected pattern being based on the critical dimension signature; andsubsequent to the substrate being processed via a photolithographic exposure process, developing the patterning film such that soluble portions of the ...

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Номер записи: 96
30-07-2015 дата публикации

PHOTORESIST RESIN COMPOSITION AND METHOD OF FORMING PATTERNS BY USING THE SAME

Номер: US20150212422A1
Автор: JU Jin Ho, KANG Min, KIM Jeong Won, Kim Tae Gyun, Lee Jong Kwang
Принадлежит:

A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound. 1. A method for forming a pattern , the method comprising:forming a photosensitive film by coating a photosensitive resin composition on a substrate;exposing the photosensitive film to light through a mask, the mask including a light transmission region and a non-light transmission region;coating a developing solution on the photosensitive film; andforming a photosensitive film pattern by baking the photosensitive film,wherein photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.2. The method of claim 1 , wherein:the photosensitive film pattern has a substantially rectangular cross-section.3. The method of claim 1 , further comprising:forming a thin film on the substrate.4. The method of claim 3 , wherein:the thin film is a pixel electrode of a liquid crystal display, and the pixel electrode includes a fine branch electrode.5. The method of claim 4 , wherein:a width of the fine branch electrode is about 2 μm or less.6. The method of claim 1 , wherein:the photosensitive resin composition further includes a phenol-based compound including a hydrophobic group.8. The method of claim 1 , wherein:the alkali soluble base resin is a tandem type resin.9. The method of claim 8 , wherein:the tandem type resin includes a high molecular weight resin, a low molecular weight resin, and a medium molecular weight resin, wherein the medium molecular weight resin is included in a smaller ...

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Номер записи: 97
30-07-2015 дата публикации

LIGHT DIFFUSING TOUCH PANEL AND MANUFACTURING METHOD FOR SAME, AS WELL AS DISPLAY DEVICE

Номер: US20150212540A1
Автор: Kamada Tsuyoshi, Katsuta Shohei, SHINOZAKI Daisuke, TSUJIMOTO Masahiro
Принадлежит:

Provided are a light diffusing touch panel of a thin type and a low coat, and a manufacturing method for the same. A light diffusing touch panel includes a base material having light-transmitting properties, a light absorbing layer that is formed on one face side of the base material , and a light diffusing portion that is formed on the one face side of the base material in the same manner as the light absorbing layer , in which the light diffusing portion has a light emission end face on the base material side, and has a light incidence end face of which an area is greater than the area of the light emission end face on an opposite side to the base material side, a height to the light emission end face from the light incidence end face of the light diffusing portion is greater than a layer thickness of the light absorbing layer , and the base material or the light absorbing layer forms any one of a dielectric layer and a pair of conductive films which are arranged so as to overlap the dielectric layer. 1. A light diffusing touch panel comprising:a base material having light-transmitting properties;a light absorbing layer that is formed on one face side of the base material; anda light diffusing portion that is formed on the one face side of the base material in the same manner as the light absorbing layer,wherein the light diffusing portion has a light emission end face on the base material side and has a light incidence end face of which an area is greater than the area of the light emission end face on an opposite side to the base material side,a height to the light emission end face from the light incidence end face of the light diffusing portion is greater than a layer thickness of the light absorbing layer, andthe base material or the light absorbing layer forms any one of a dielectric layer and a pair of conductive films which are arranged so as to overlap the dielectric layer.2. The light diffusing touch panel according to claim 1 ,wherein the base material ...

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Номер записи: 98
29-07-2021 дата публикации

DEVELOPING DEVICE AND DEVELOPING METHOD

Номер: US20210232046A1
Автор: Li Wei, ZHAO ZHENYU
Принадлежит:

A developing device and a developing method are provided. The developing device includes a developing chamber, a conveyor table, and an air ejection member. A spraying member in the developing chamber sprays a developing agent onto a surface of a display device. The conveyor table moves the display device from outside of the developing chamber to inside of the developing chamber, and from inside of the developing chamber to outside of the developing chamber. The air ejection member ejects airflow onto the display device. The developing agent disposed on the display device can be prevented from flowing out of the developing chamber. 1. A developing device , comprising:a developing chamber configured to carry out a developing process to a display device therein, wherein a spraying member is disposed in the developing chamber, and is configured to spray a developing agent onto a surface of at least one portion of the display device in the developing chamber;a conveyor table, wherein at least one portion of the conveyor table is disposed inside the developing chamber, and the conveyor table is configured to move the display device waiting to be processed by the developing process from outside of the developing chamber to inside of the developing chamber, and configured to move the display device being processed by the developing process from inside of the developing chamber to outside of the developing chamber; andan air ejection member configured to eject airflow onto the display device when the display device is moved from outside of the developing chamber to inside of the developing chamber, so as to prevent the developing agent disposed on a portion of the display device within the developing chamber from flowing out of the developing chamber;wherein the conveyor table at least comprises a first sub-table and a second sub-table;wherein the developing device further comprises a lifter disposed between the first sub-table and the second sub-table;wherein the lifter ...

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Номер записи: 99
19-07-2018 дата публикации

IMAGE TRANSFER USING EUV LITHOGRAPHIC STRUCTURE AND DOUBLE PATTERNING PROCESS

Номер: US20180204723A1
Автор: Chen Hsueh-Chung, Mignot Yann A.M., Xu Yongan
Принадлежит:

An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures. 115-. (canceled)16. An EUV lithographic structure comprising:an EUV photosensitive resist layer; anda multilayer hardmask layer comprising an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV lithographic structure is free of an antireflective layer and deposited on and in direct contact with the multilayer hardmask layer.17. The EUV lithographic structure of claim 16 , wherein the uppermost and lowermost oxide hardmask layers comprise a low temperature oxide.18. The EUV lithographic structure of claim 16 , wherein the intermediate hardmask layer comprises titanium nitride or an organosilicon.19. (canceled)20. The EUV lithographic structure of claim 16 , wherein the intermediate hardmask layer comprises octamethylcyclotetrasiloxane.21. (canceled) The present invention generally relates to semiconductor integrated circuits, and more particularly, to image transfer processes employing an extreme ultraviolet (EUV) sensitive lithographic structure and double patterning process.The back-end-of-line (BEOL) is the second portion of integrated circuit fabrication where the individual devices (transistors, capacitors, resistors, etc.) are interconnected with interconnects and a metallization layer, which function as the wiring network of the wafer. Common metals that are used to form the metallization layers and ...

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Номер записи: 100