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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 1890. Отображено 100.
10-03-2013 дата публикации

МИКРОРЕЛЕ ВЫСОКОЧАСТОТНОЕ

Номер: RU0000125769U1
Автор: Афиногенов Иван Анатольевич, Бичурин Мирза Имамович, Семенов Геннадий Алексеевич
Принадлежит: Общество с ограниченной ответственностью "Научно-производственное предприятие "НЭСТ"

Микрореле высокочастотное, включающее систему управления, одну контактную пару с консольным электростатическим исполнительным механизмом, отличающееся тем, что консольная подвижная система представляет собой двухслойную комбинацию поликристаллического кремния и алюминия, а в исполнительный механизм введены дополнительные упругие подвесы. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК H01H 59/00 (13) 125 769 U1 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ 2012112960/07, 03.04.2012 (24) Дата начала отсчета срока действия патента: 03.04.2012 (73) Патентообладатель(и): Общество с ограниченной ответственностью "Научно-производственное предприятие "НЭСТ" (RU) (45) Опубликовано: 10.03.2013 Бюл. № 7 (54) МИКРОРЕЛЕ ВЫСОКОЧАСТОТНОЕ U 1 1 2 5 7 6 9 R U Стр.: 1 U 1 Формула полезной модели Микрореле высокочастотное, включающее систему управления, одну контактную пару с консольным электростатическим исполнительным механизмом, отличающееся тем, что консольная подвижная система представляет собой двухслойную комбинацию поликристаллического кремния и алюминия, а в исполнительный механизм введены дополнительные упругие подвесы. 1 2 5 7 6 9 Адрес для переписки: 173003, г. Великий Новгород, ул. Б. СанктПетербургская, 41, НовГУ, Центр патентования R U Приоритет(ы): (22) Дата подачи заявки: 03.04.2012 (72) Автор(ы): Афиногенов Иван Анатольевич (RU), Бичурин Мирза Имамович (RU), Семенов Геннадий Алексеевич (RU) RU 5 10 15 20 25 30 35 40 45 125 769 U1 Полезная модель относится к области электроники СВЧ. Устройство для коммутирования СВЧ сигнала повышенной мощности, при использовании избыточной силы электростатического преобразователя для размыкания контактной системы реле. Недостатком известных реле является то, что они обладают ограниченным быстродействием и малым ресурсом. Применение различных материалов, таких как рутений, родий, палладий, золото в качестве контактных пар не решает проблемы электроэрозионного ...

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Номер записи: 1
08-03-2012 дата публикации

Mems switch and communication device using the same

Номер: US20120055769A1
Автор: Hendrikus A.C. Tilmans, Jan Bienstman, Xavier Rottenberg, Yasuyuki Naito
Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC, Panasonic Corp

A MEMS switch is provided, wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the contact where the signal is transmitted in “on” state. Provided is a MEMS switch 100 including a first electrode 101 , a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022 , wherein electrical contact is made between the electrode 101 and the electrode 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022 , and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101 , and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made between the electrodes 101 and 104.

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Номер записи: 2
07-06-2012 дата публикации

Mems switches and fabrication methods

Номер: US20120138436A1
Автор: Jeffrey P. Gambino, Stephen A. Mongeon
Принадлежит: International Business Machines Corp

MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to be deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections.

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Номер записи: 3
21-06-2012 дата публикации

Composite sacrificial structure for reliably creating a contact gap in a mems switch

Номер: US20120156820A1
Автор: Sangchae Kim
Принадлежит: RF Micro Devices Inc

The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device.

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Номер записи: 4
05-07-2012 дата публикации

Rf mems switch and fabricating method thereof

Номер: US20120168883A1
Автор: Chiung-I Lee, Jun-Kai Mao
Принадлежит: Industrial Technology Research Institute ITRI

A RF MEMS switch includes a substrate, a first electrode, a first insulating layer, a second insulating layer, a second electrode and a movable electrode. The first electrode is disposed on the substrate. The first insulating layer covers the first electrode. The second insulating layer covers a portion of the substrate. The second electrode is disposed in the second insulating layer and is located at a plane different from a plane of the first electrode. The movable electrode is partially disposed on a surface of the second insulating layer, and extends over the first electrode and the second electrode. A portion of the movable electrode not disposed on the surface of the second insulating layer is a movable portion. The second insulating layer has a gap exposing a space between the movable portion and the first insulating layer and a space between the movable portion and the second electrode.

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Номер записи: 5
16-08-2012 дата публикации

Micro-electromechanical system devices and methods of making micro-electromechanical system devices

Номер: US20120205753A1
Автор: Andrew J. Minnick, Charles W. Blackmer, Kenneth D. Brennan, Mollie K. Devoe, Scott G. Adams
Принадлежит: Kionix Inc

A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first, second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.

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Номер записи: 6
18-10-2012 дата публикации

High-impedance mems switch

Номер: US20120262192A1
Автор: Matthew A. Zeleznik
Принадлежит: Akustica Inc, ROBERT BOSCH GMBH

A MEMS switch. The MEMS switch has a high-impedance state and a low-impedance state for biasing a capacitive sensor, and includes an actuation bias terminal, a sense bias terminal, a switch control terminal, a sense node terminal, and a spring. The actuation bias terminal and the sense bias terminal reside in a released region of the switch. The sense bias terminal is physically coupled to the actuation bias terminal by a dielectric which electrically isolates the sense bias terminal from the actuation bias terminal. The switch control terminal is separated from the sense bias terminal by a first air gap, and the sense node terminal is separated from the sense bias terminal by a second air gap. The spring supports the actuation bias terminal, the sense bias terminal, and the dielectric.

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Номер записи: 7
01-11-2012 дата публикации

Electronic Ohmic Shunt RF MEMS Switch and Method of Manufacture

Номер: US20120273331A1
Автор: Daniel C. Judy, Jeffrey S. Pulskamp, Ronald G. Polcawich
Принадлежит: US Department of Army

An electrostatic ohmic shunt radio frequency (RF) microeleetromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

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Номер записи: 8
20-12-2012 дата публикации

Normally closed microelectromechanical switches (mems), methods of manufacture and design structures

Номер: US20120318648A1
Автор: Anthony K. Stamper, Dawn D. HALL, Mark C.H. Lamorey
Принадлежит: International Business Machines Corp

Normally closed (shut) micro-electro-mechanical switches (MEMS), methods of manufacture and design structures are provided. A method of forming a micro-electrical-mechanical structure (MEMS), includes forming a plurality of electrodes on a substrate, forming a beam structure in electrical contact with a first of the electrodes, and bending the beam structure with a thermal process. The method further includes forming a cantilevered electrode extending over an end of the bent beam structure, and returning the beam structure to its original position, which will contact the cantilevered electrode in a normally closed position.

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Номер записи: 9
04-04-2013 дата публикации

NANOELECTROMECHANICAL TUNNELING CURRENT SWITCH SYSTEMS

Номер: US20130081931A1
Автор: Pinkerton Joseph F.
Принадлежит: CLEAN ENERGY LABS, LLC

A nanoelectromechanical tunneling current switch includes a cantilevered nanofilament including a secured end and an unsecured end and a conductor with a surface substantially perpendicular to a longitudinal axis of the nanofilament when the nanofilament is undeflected. The nanofilament is positioned with respect to the conductor to define a gap between the unsecured end of the nanofilament and the surface of the conductor substantially perpendicular to the longitudinal axis of the nanofilament. The nanofilament and the conductor are electrically connected by a circuit, and a tunneling current is configured to flow from the nanofilament to the surface of the conductor substantially perpendicular to the longitudinal axis of the nanofilament. In other embodiments of the nanoelectromechanical tunneling current switch, an electrically conductive membrane can be utilized in place of, or in addition to, the cantilevered nanofilament. 1. A switch comprising:(i) a cantilevered nanofilament comprising a secured end and an unsecured end;(ii) a conductor with a surface substantially perpendicular to a longitudinal axis of the nanofilament when the nanofilament is undeflected, wherein the nanofilament is positioned with respect to the conductor to define a gap between the unsecured end of the nanofilament and the surface of the conductor substantially perpendicular to the longitudinal axis of the nanofilament; and (a) a tunneling current is configured to flow between the nanofilament and the surface of the conductor substantially perpendicular to the longitudinal axis of the nanofilament; and', '(b) the tunneling current is configured to flow from the nanofilament to the conductor in a direction substantially parallel to the longitudinal axis of the nanofilament when the nanofilament is undeflected., '(iii) a circuit electrically connecting the nanofilament and the conductor, wherein'}2. The switch of claim 1 , wherein the nanofilament is a carbon nanotube.3. The switch of ...

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Номер записи: 10
13-06-2013 дата публикации

NANO-ELECTROMECHANICAL SWITCH

Номер: US20130146429A1
Автор: Despont Michel, Grogg Daniel, Knoll Armin W.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform. 1. A nano-electromechanical switch , comprising:at least one actuator electrode; anda curved cantilever beam;wherein said curved cantilever beam is adapted to flex in response to an activation voltage applied between said actuator electrode and said curved cantilever beam to provide an electrical contact between said curved cantilever beam and an output electrode of said nano-electromechanical switch; andwherein before, during and after said curved cantilever beam flex in response to said activation voltage, a remaining gap between said curved cantilever beam and said actuator electrode remains uniform.2. The nano-electromechanical switch according to claim 1 , wherein a flexible hinge portion of said curved cantilever beam connects said curved cantilever beam with an input electrode of said nano-electromechanical switch claim 1 , wherein said flexible hinge portion is less stiff than a main body portion of said curved cantilever beam so that the motion of the curved cantilever beam approximates a rotation around said flexible hinge portion and forms a point of rotation.3. The nano-electromechanical switch according to claim 2 , wherein a motion direction angle between a direction of motion of said curved cantilever beam around said point of rotation and a surface of said curved cantilever beam facing said ...

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Номер записи: 11
01-08-2013 дата публикации

MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE AND METHODS OF MANUFACTURE

Номер: US20130192964A1
Автор: Luce Stephen E., Stamper Anthony K.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode. 1. A structure comprising:at least two fixed electrodes including a first fixed electrode and a second fixed electrode; andat least two cantilevered electrodes having ends which overlap, wherein one of the at least two cantilevered electrodes is structured and configured to contact the second fixed electrode upon an application of a voltage by at least the first fixed electrode.2. The structure of claim 1 , further comprising a hermetically sealed volume having encapsulated therein the at least two cantilevered electrodes and the at least two fixed electrodes claim 1 , wherein the hermetically sealed volume is provided by at least a liner.3. The structure of claim 2 , wherein:the at least two cantilevered electrodes include a moveable electrode and a stationary electrode; andthe stationary electrode is fixed to the liner such that the stationary electrode remains stationary upon the application of the voltage by at least the first fixed electrode.4. The structure of claim 3 , wherein:the voltage provided by the first fixed electrode is a negative voltage;the stationary electrode is structured and configured to apply a positive voltage;the moveable electrode is positioned between the second fixed electrode and the stationary electrode; andthe moveable electrode is structured and configured to move away from the stationary electrode and toward the first fixed electrode and to contact with the second fixed electrode upon the application of the negative voltage and the positive voltage.5. A structure comprising:at least two fixed electrodes including a first fixed electrode and a second fixed electrode; and the first electrode and the second electrode overlap and are structured and operable ...

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Номер записи: 12
14-11-2013 дата публикации

Micro electro mechanical system (mems) microwave switch structures

Номер: US20130299328A1
Автор: Andrew Malczewski, Brandon W. Pillans, Cody B. Moody
Принадлежит: Raytheon Co

A structure having a plurality serially coupled variable capacitors, each one of the variable capacitors having a pair of plates, one of the plates being electrostatically moveable relative to the other one of the plates, to provide each one of the variable capacitors with a variable capacitance; and a transmission line. A first one of the variable capacitors has a first one of the one plates thereof coupled between and input and output of the transmission line and a second one of the plates thereof serially coupled to a first one of the plates of a second one of the variable capacitors.

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Номер записи: 13
26-12-2013 дата публикации

Relay module for vehicle battery system

Номер: US20130342292A1
Автор: Dal KIM, Jun Ho Bang, Yong Hwan Choi
Принадлежит: Hyundai Motor Co

Disclosed herein is a relay module for a vehicle battery system. The relay module includes a movable unit configured to be moved by a magnetic field generated by a coil and a return spring within a relay. This movable unit controls a state of an electrical connection between relay electrodes. A microsensor installed between the movable unit and a fixed unit maintains a fixed location relative to the movable unit and is configured to induce a variation in an electrical physical quantity depending on a variation in a location of the movable unit relative to the fixed unit.

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Номер записи: 14
09-01-2014 дата публикации

Electronic device and method of manufacturing the same

Номер: US20140009035A1
Автор: Osamu Toyoda
Принадлежит: Fujitsu Ltd

An electronic device includes a substrate, an electrode formed on the substrate, and a movable portion provided above the electrode, the movable portion being elastically deformable, in which the movable potion includes a shape memory alloy film.

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Номер записи: 15
16-01-2014 дата публикации

Vertical Integrated Circuit Switches, Design Structure and Methods of Fabricating Same

Номер: US20140014480A1
Автор: Anderson Felix P., Cooney, III Edward C., McDevitt Thomas L., Stamper Anthony K.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void. 1. A MEMS switch , comprising:at least two vertically extending metal wires formed in a wafer; anda void formed in the wafer which accommodates at least one of the at least two vertically extending metal wires,wherein the at least one of the at least two vertically extending metal wires is moveable within the void upon an application of a voltage.2. The MEMS switch of claim 1 , wherein the at least two vertically extending metal wires are four wires and the at least one wire is two inner wires which are moveable within the void upon an application of the voltage.3. The MEMS switch of claim 2 , wherein the at least two inner wires are formed from a bottom side of the wafer.4. The MEMS switch of claim 1 , wherein the at least one of the at least two vertical extending metal wires are three vertically extending metal wires claim 1 , with a middle wire claim 1 , longer to two outer wires.5. The MEMS switch of claim 1 , wherein the at least two vertically extending metal wires are three verrtically extending metal wires with two fixed to the wafer and partially exposed to the void.6. The MEMS switch of claim 1 , wherein the void is hermetically sealed.7. The MEMS switch of claim 1 , wherein the at least two vertically extending metal wires are four vertically extending wires claim 1 , two inner wires of the four vertically extending wires are moveable within the void in order to make contact with one another.8. The MEMS switch of claim 7 , further comprising two wire ...

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Номер записи: 16
23-01-2014 дата публикации

Nanoelectromechanical logic devices

Номер: US20140021982A1
Автор: Massood Tabib-Azar
Принадлежит: UNIVERSITY OF UTAH

Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

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Номер записи: 17
06-03-2014 дата публикации

FOUR TERMINAL NANO-ELECTROMECHANICAL SWITCH WITH A SINGLE MECHANICAL CONTACT

Номер: US20140061013A1
Автор: Despont Michel, Drechsler Ute, Grogg Daniel, Hagleitner Christoph, Pu Yu
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam. 1. A nano-electro-mechanical switch , comprising:an input electrode;a body electrode;an insulating layer;an actuator electrode;an output electrode; anda cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode, wherein the cantilever beam comprises the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam.2. The nano-electromechanical switch of claim 1 , wherein the cantilever beam has a layer structure with at least three layers claim 1 , comprising:a first layer corresponding to the body electrode,a second layer corresponding to the isolating layer, anda third layer corresponding to the input electrode, wherein the three layers form a sequence wherein, on the one hand, the first layer is adjacent to the second layer, and on the other hand, the second layer is adjacent to the third layer.3. The nano-electromechanical switch of claim 1 , wherein the cantilever beam is curved.4. The nano-electromechanical switch of claim 3 , wherein ...

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Номер записи: 18
13-03-2014 дата публикации

NORMALLY CLOSED MICROELECTROMECHANICAL SWITCHES (MEMS), METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20140070340A1
Автор: HALL Dawn D., Lamorey Mark C.H., Stamper Anthony K.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

Normally closed (shut) micro-electro-mechanical switches (MEMS), methods of manufacture and design structures are provided. A structure includes a beam structure that includes a first end hinged on a first electrode and in electrical contact with a second electrode, in its natural state when not actuated. 1. A structure , comprising a beam structure comprising a first end hinged on a first electrode and in electrical contact with a second electrode in a natural state when the beam structure is not actuated.2. The structure of claim 1 , wherein the beam structure and the second electrode are of different materials claim 1 , and the second electrode is a cantilevered structure claim 1 , extended about the beam structure and above an end thereof.3. The structure of claim 2 , further comprising a plurality of electrodes on a substrate claim 2 , wherein the plurality of electrodes comprise the first electrode and the second electrode.4. The structure of claim 1 , wherein the beam structure is in electrical contact with the first electrode.5. The structure of claim 1 , wherein: a first conductive pad; and', 'a second conductive pad formed on the first conductive pad; and, 'the first electrode comprisesthe beam structure is formed on the second conductive pad.6. The structure of claim 5 , wherein the second electrode comprises:a first conductive pad;a second conductive pad formed on the first conductive pad;a third conductive pad formed on the second conductive pad; anda cantilevered conductive pad formed on the third conductive pad.7. The structure of claim 6 , wherein the cantilevered conductive pad extends over the beam structure.8. The structure of claim 7 , wherein the cantilevered conductive pad is in electrical contact with an upper surface of the beam structure.9. The structure of claim 6 , further comprising a third electrode positioned on a substrate between the first electrode and the second electrode claim 6 , the third electrode comprising a first conductive ...

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Номер записи: 19
13-03-2014 дата публикации

Liquid MEMS Capacitor

Номер: US20140071584A1
Автор: Ahmadreza Rofougaran
Принадлежит: Broadcom Corp

A liquid micro-electro-mechanical system (MEMS) capacitor includes a first capacitor plate, a second capacitor plate, a channel, a dielectric doped droplet, and a droplet activating module. The channel is implemented or embedded in one or more layers of a board and the dielectric doped droplet is contained in the channel. The droplet activating module operable to change the dielectric doped droplet with respect to the first and second capacitive plates, which are proximal to the channel and at a distance from each other, thereby changing a dielectric property of the liquid MEMS capacitor.

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Номер записи: 20
07-01-2016 дата публикации

Method of and Apparatus for Protecting a Switch, Such as a MEMS Switch, and to a MEMS Switch Including Such a Protection Apparatus

Номер: US20160006241A1
Автор: Carty Eric James, FITZGERALD Padraig L.
Принадлежит:

A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt circuit can themselves be removed from the shunt when they are not required. This improves the electrical performance of the shunt when the switch is supposed to be in an off state. 1. A method of protecting a switch , comprising providing a shunt path in parallel with the switch , wherein the shunt path comprises at least one solid state device in series with at least one mechanical switch.2. A method as claimed in claim 1 , in which the switch is a MEMS switch.3. A method as claimed in claim 1 , in which the at least one mechanical switch comprises a MEMS switch.4. A method as claimed in claim 1 , in which the or each mechanical switch has a respective switch shunt claim 1 , or other means for reducing a potential difference across the mechanical switch.5. A method as claimed in claim 1 , in which the switch has a first node and a second node claim 1 , and the first node is selectively connectable to a common mode by way of a first node mechanical switch claim 1 , and the second node is selectively connectable to the common node by way of a second node mechanical switch.6. A method as claimed in claim 1 , further comprising placing the shunt path in a low impedance state prior to switching of the switch.7. A method as claimed in claim 1 , in which the at least one solid state device comprises a transistor or a diode.8. A method of protecting a MEMS switch claim 1 , comprising placing a shunt path in parallel with the MEMS switch claim 1 , wherein the shunt path comprises at least one further MEMS switch.9. A method as claimed in claim 8 , where the at least one further MEMS ...

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Номер записи: 21
02-01-2020 дата публикации

Switch Self-Actuation Mitigation Using A Tracking Signal

Номер: US20200006024A1
Автор: Doug Hawk
Принадлежит: Menlo Microsystems Inc

A method of mitigating self-actuation of a switch may comprise generating a tracking signal, based on an input signal that the switch is configured to convey, and combining the tracking signal with an actuating signal to generate a modified actuating signal. The actuating signal may be configured to change a state of the switch from a first state (e.g., ON) to a second state (e.g., OFF). The method further comprises selectively applying the modified actuating signal to a gate of the switch. A switch self-actuation mitigation system may comprise a first coupling device for electrically couple an AC component of a first signal to a node, where the first signal is applied a switch input. The system may further comprise a second coupling device configured to electrically couple an actuating signal to the node, and a driving device configured to selectively couple the node to a gate of the switch.

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Номер записи: 22
04-01-2018 дата публикации

SYSTEM AND METHOD FOR FAULT INTERRUPTION WITH MEMS SWITCHES

Номер: US20180006445A1
Автор: CLAYDON Glenn Scott, St-Pierre Richard, Weaver Stanton Earl
Принадлежит:

An electrical system includes an operation MEMS switch operable in on and off states to enable and disable current flow to a load and a fault interruption MEMS switch positioned in series with the operation MEMS switch. The fault interruption MEMS switch is operable in on and off states to enable and disable current flow to the electrical load, with operation of the fault interruption MEMS switch in the off state disabling current flow to the load regardless of the state of the operation MEMS switch. A fault sensor control system operate to sense a system variable, analyze the system variable to detect if a fault is affecting the electrical system and, upon detection of a fault, switch the fault interruption MEMS switch from the on state to the off state to interrupt current flowing through the operation MEMS switch to the load. 1. An electrical system having a fault interruption micro-electro-mechanical system (MEMS) switch unit , the electrical system comprising:a first operation MEMS switch positioned in a first electrical path, the first operation MEMS switch operable in an on state that enables current to flow to a first electrical load and an off state that disables current from flowing to the first electrical load;a first fault interruption MEMS switch positioned in series with the first operation MEMS switch, the first fault interruption MEMS switch operable in an on state that enables current to flow to the first electrical load and an off state that disables current from flowing to the first electrical load, wherein operation of the first fault interruption MEMS switch in the off state disables current from flowing to the first electrical load regardless of the state of the first operation MEMS switch;a first fault sensor positioned to sense a first system variable; and receive the first system variable from the first fault sensor;', 'analyze the first system variable to detect if a fault is affecting the electrical system; and', 'upon detection of a fault ...

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Номер записи: 23
07-01-2021 дата публикации

Coupled Transmission Line Resonate RF Filter

Номер: US20210005949A1
Автор: Flemming Jeb H., McWethy Kyle
Принадлежит:

The present invention includes a method of creating electrical air gap low loss low cost RF mechanically and thermally stabilized interdigitated resonate filter in photo definable glass ceramic substrate. Where a ground plane may be used to adjacent to or below the RF filter in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate. 1. A method of making a mechanically stabilized RF coupled interdigitated resonate device comprising:masking a design layout comprising one or more structures to form one or more interdigitated structures with electrical conduction channels on a photosensitive glass substrate;exposing at least one portion of the photosensitive glass substrate to an activating energy source;heating the photosensitive glass substrate for at least ten minutes above its glass transition temperature;cooling the photosensitive glass substrate to transform at least part of the exposed glass to a crystalline material to form a glass-crystalline substrate;etching the glass-crystalline substrate with an etchant solution to form a mechanical support device; andcoating the one or more electrical conductive interdigitated transmission line, ground plane and input and output channels with one or more metals, wherein the metal is connected to a circuitry.2. The method of claim 1 , wherein the device is covered with a lid covering all or part of the external electrical isolation structure with a metal or metallic media further comprises connecting the metal or metallic media to a ground.3. The method of claim 1 , wherein the RF filter line has mechanical and thermal stabilization structure is under less than 50% claim 1 , 40% claim 1 , 35% claim 1 , 30% claim 1 , 25% claim 1 , 20% claim 1 , 10% claim 1 , 5% or 1% of the contact area ...

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Номер записи: 24
03-01-2019 дата публикации

SEMICONDUCTOR DEVICE INCLUDING CONTROL SWITCHES TO REDUCE PIN CAPACITANCE

Номер: US20190006320A1
Автор: Bai Yanwen, Bai Ye, Chiu Chin-Tien, Liao Chih-Chin, Liu Yangming, Ma Shineng, Zhang Yazhou
Принадлежит: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.

A semiconductor device including control switches enabling a semiconductor die in a stack of semiconductor die to send or receive a signal, while electrically isolating the remaining die in the die stack. Parasitic pin cap is reduced or avoided by electrically isolating the non-enabled semiconductor die in the die stack. 1. A semiconductor device , comprising:a plurality of semiconductor stacked die, each semiconductor die of the plurality of semiconductor die comprising a plurality of die bond pads; and a first group of control switches electrically connected to a first semiconductor die of the plurality of semiconductor die,', 'a first control trace associated with the first group of control switches such that each control switch in the first group of control switches is either open or closed, depending upon whether a voltage passes through the first control trace,', 'a second group of control switches electrically connected to a second semiconductor die of the plurality of semiconductor die, and', 'a second control trace associated with the second group of control switches such that each control switch in the second group of control switches is either open or closed, depending upon whether a voltage passes through the second control trace., 'a plurality of control switches, the plurality of control switches comprising2. The semiconductor device of claim 1 , wherein the control switches are micro-electromechanical control switches.3. The semiconductor device of claim 1 , wherein the control switches are integrated circuit control switches.4. The semiconductor device of claim 1 , wherein the plurality of control switches are open in the absence of a voltage through first and second control traces claim 1 , a voltage through the first control trace closes the first group of control switches.5. The semiconductor device of claim 1 , further comprising a substrate claim 1 , the plurality of semiconductor die supported on the substrate claim 1 , the substrate comprising ...

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Номер записи: 25
11-01-2018 дата публикации

USE OF A REACTIVE, OR REDUCING GAS AS A METHOD TO INCREASE CONTACT LIFETIME IN MICRO CONTACT MEMS SWITCH DEVICES

Номер: US20180009657A1
Автор: Cotte John M., Hoivik Nils D., JAHNES Christopher V.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices. 110-. (canceled)11. A process for substantially reducing contaminants in a MEMS device comprising a sealed chamber containing an electro mechanical element having operating surfaces , by placing a gas in said chamber comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of said device in said sealed chamber in a manner to maximize the electrical conductivity of said operating surfaces during operation of said MEMS device.12. The process of wherein said MEMS device comprises a MEMS switch and said operating surfaces comprise electrically conductive switch contact surfaces in said MEMS switch.13. The process of wherein said reactive gas comprises a reducing gas.14. The process of wherein said reactive gas comprises a reducing gas.15. The process of wherein said reactive gas comprises hydrogen or an azane or combinations thereof.16. The process of wherein said reducing gas comprises hydrogen or an azane or combinations thereof.17. The process of wherein said reactive gas is optionally mixed with an inert gas to control the reactivity of said reactive gas.18. The process of wherein said reactive gas is optionally mixed ...

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Номер записи: 26
11-01-2018 дата публикации

Planar cavity mems and related structures, methods of manufacture and design structures

Номер: US20180009658A1
Автор: Anthony K. Stamper, Christopher V. Jahnes
Принадлежит: International Business Machines Corp

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

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Номер записи: 27
10-01-2019 дата публикации

METHOD OF AND APPARATUS FOR PROTECTING A SWITCH, SUCH AS A MEMS SWITCH, AND TO A MEMS SWITCH INCLUDING SUCH A PROTECTION APPARATUS

Номер: US20190013668A1
Автор: Carty Eric James, Fitzgerald Padraig
Принадлежит: Analog Devices Global Unlimited Company

A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt circuit can themselves be removed from the shunt when they are not required. This improves the electrical performance of the shunt when the switch is supposed to be in an off state. 111.-. (canceled)12. A protected microelectromechanical systems (MEMS) device , comprising:a MEMS switch having a first switch node and a second switch node;a protection circuit comprising a diode having a first electrode connected to the first switch node and a second electrode connected to a voltage node, the protection circuit configured to connect the first switch node to the voltage node in response to a switch transition of the MEMS switch.13. The protected MEMS device of claim 12 , wherein the voltage node is a ground node.14. The protected MEMS device of claim 12 , further comprising a shunt component connected between the first electrode of the diode and the first switch node.15. The protected MEMS device of claim 14 , wherein the shunt component comprises a resistor.16. The protected MEMS device of claim 14 , wherein the shunt component comprises a protection switch connected between the first electrode of the diode and the first switch node of the MEMS switch claim 14 , wherein the protection switch is configured to electrically connect the first electrode of the diode and the first switch node in response to a switch transition of the MEMS switch.17. The protected MEMS device of claim 16 , wherein the shunt component further comprises a resistor in parallel with the protection switch.18. The protected MEMS device of claim 12 , further comprising a second switch connected between the ...

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Номер записи: 28
18-01-2018 дата публикации

MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE AND METHODS OF MANUFACTURE

Номер: US20180016137A1
Автор: Luce Stephen E., Stamper Anthony K.
Принадлежит:

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, forming a third cantilevered electrode operable to directly contact the first cantilevered electrode upon an application of a voltage to a second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode. 1. A method of fabricating a switch comprising:forming a first cantilevered electrode over a first fixed electrode;forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode;forming a third cantilevered electrode operable to directly contact the first cantilever electrode upon an application of a voltage to a second fixed electrode; andforming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.2. The method of claim 1 , wherein the forming the hermetically sealed volume comprises:forming at least one hole in a nitride liner to gain access to a sacrificial resist;etching the sacrificial resist; andclosing the at least one hole by deposition of additional liner material.3. The method of claim 2 , wherein the hermetically sealed volume is a dome.4. The method of claim 3 , wherein the dome is oval shaped.5. The method of claim 1 , wherein overlapping portions of the first cantilevered electrode and the second cantilevered electrode are separated by a vertical distance of about two microns.6. The method of claim 1 , wherein the third cantilevered electrode is formed above the second cantilevered electrode.7. The method of claim 1 , wherein the second cantilevered electrode is formed above the first cantilevered electrode.8. The method ...

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Номер записи: 29
18-01-2018 дата публикации

MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE AND METHODS OF MANUFACTURE

Номер: US20180016138A1
Автор: Luce Stephen E., Stamper Anthony K.
Принадлежит:

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode operable to directly contact a second fixed electrode upon an application of a voltage to a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode. 1. A method of fabricating a switch comprising:forming a first cantilevered electrode operable to directly contact a second fixed electrode upon an application of a voltage to a first fixed electrode;forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode; andforming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.2. The method of claim 1 , wherein the forming the hermetically sealed volume comprises:forming at least one hole in a nitride liner to gain access to a sacrificial resist;etching the sacrificial resist; andclosing the at least one hole by deposition of additional liner material.3. The method of claim 2 , wherein the hermetically sealed volume is a dome.4. The method of claim 3 , wherein the dome is oval shaped.5. The method of claim 1 , wherein overlapping portions of the first cantilevered electrode and the second cantilevered electrode are separated by a vertical distance of about two microns.6. The method of claim 1 , wherein the first cantilevered electrode is formed such that upon application of a voltage to the second cantilevered electrode claim 1 , the first cantilevered electrode is operable to directly contact the second fixed electrode.7. The method of claim 1 , wherein the second cantilevered electrode is formed above the first cantilevered electrode.8. The method of claim 1 , ...

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Номер записи: 30
16-01-2020 дата публикации

SYSTEMS AND METHODS OF OPERATION OF CAPACITIVE RADIO FREQUENCY MICRO-ELECTROMECHANICAL SWITCHES

Номер: US20200015784A1
Автор: LOEBL Hans-Peter, Shulepov Sergei
Принадлежит:

Disclosed are systems and methods of operation for capacitive radio frequency micro-electromechanical switches, such as CMUT cells for use in an ultrasound system. An RFMEMS may include substrate, a first electrode connected to the substrate, a membrane and a second electrode connected to the membrane. In some examples, there is a dielectric stack between the first electrode and the second electrode and flexible membrane. The dielectric stack design minimizes drift in the membrane collapse voltage. In other examples, one of the electrodes is in the form of a ring, and a third electrode is provided to occupy the space in the center of the ring. Alternatively, the first and second electrodes are both in the form of a ring and there is a support between the electrodes inside the rings. 1. A capacitive radio frequency micro-electromechanical switch , RFMEMS , comprising:a substrate;a first electrode connected to the substrate;a flexible membrane, wherein the flexible membrane is at least partially spatially separated from the first electrode;a second electrode connected to the flexible membrane; and a first dielectric layer, wherein the first dielectric layer has a first density of electrically active defects; and', 'a second dielectric layer, wherein the second dielectric layer has a second density of electrically active defects, lower than the first., 'a dielectric stack disposed between the first electrode and the second electrode and flexible membrane, comprising2. (canceled)3. The capacitive RFMEMS as claimed in claim 1 , wherein the first and second dielectric layers comprise silicon dioxide claim 1 , SiO2.4. The capacitive RFMEMS as claimed in claim 3 , wherein the first dielectric layer is constructed using atomic layer deposition claim 3 , ALD.5. The capacitive RFMEMS as claimed in claim 3 , wherein the second dielectric layer is constructed using chemical vapor deposition claim 3 , CVD.6. The capacitive RFMEMS as claimed in claim 4 , wherein the second ...

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Номер записи: 31
16-01-2020 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20200017355A1
Автор: Stamper Anthony K., TWOMBLY John G.
Принадлежит:

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity. 1. A structure , comprising:at least one fixed plate;an insulator layer covering the at least one fixed plate; and{'sub': '3', 'a TiN/TiAllayer between the at least one fixed plate and the insulator layer,'}wherein the insulator layer has a tapered profile.2. The structure of claim 1 , further comprising:at least one beam that is moveable over the at least one fixed plate; anda chamber over the at least one beam.3. The structure of claim 1 , wherein the at least one fixed plate is a patterned wiring layer.4. The structure of claim 1 , wherein the insulator layer is one or more films over the at least one fixed plate and exposed portions of an underlying substrate.5. The structure of claim 1 , wherein the at least one fixed plate contains aluminum.6. The structure of claim 1 , wherein the insulator layer comprises AlO(alumina).7. The structure of claim 1 , wherein the insulator layer covers sidewall surfaces of the at least one fixed plate.8. The structure of claim 1 , wherein the insulator layer is structured to prevent formation of aluminum silicide with a sacrificial material deposition.9. The structure of claim 1 , wherein the insulator layer is a conformal barrier comprising TaO(tantalum pentaoxide).10. The structure of claim 1 , wherein the at least one fixed plate includes an undercut of AlCu.11. The ...

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Номер записи: 32
16-01-2020 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20200017356A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A method of forming a Micro-Electro-Mechanical System (MEMS) , comprising:forming a beam;forming a first sacrificial layer on the beam;forming an insulator layer on the first sacrificial layer;forming a cavity via in the insulator layer, exposing a portion of the first sacrificial layer;forming an electrode on the insulator layer;forming a second sacrificial layer over the beam and in the cavity via;forming a lid material over the second sacrificial layer and the electrode; andproviding a vent hole in the lid material to expose at least the second sacrificial layer; andventing the first sacrificial layer and the second sacrificial layer to form at least a lower cavity and an upper cavity.2. The method of claim 1 , wherein the beam and the upper cavity are remote from the electrode.3. The method of claim 1 , wherein the vent hole is rounded or chamfered.4. The method of claim 1 , wherein the vent hole is octagonal.5. The method of claim 1 , wherein the first sacrificial layer and the second sacrificial layer are silicon material.6. The method of claim 1 , further comprising performing a hafnium clean to remove oxide and hydrogen on exposed surfaces of the second sacrificial layer prior to venting the first sacrificial layer and the second sacrificial layer.7. The method of claim 6 , wherein the venting the first sacrificial layer and the second sacrificial layer is a selective etch to silicon material.8. The method of claim 1 , wherein the vent hole is provided greater than 5 ...

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Номер записи: 33
18-01-2018 дата публикации

NANOCOMPOSITE FORCE SENSING MATERIAL

Номер: US20180018055A1
Автор: Li Hao
Принадлежит:

Nanocomposite sensing materials are formulated with low aspect ratio conductive fillers with close to or higher than percolation threshold in a low Poisson's Ratio matrix binder with a high gauge factor, low temperature coefficient of resistance (TCR), low temperature coefficient of gauge factor (TCGF), and low hysteresis. 1. A piezo-resistive film comprising:a conductive filler,a monomer, oligomer, or polymer matrix, anda substrate.2. The piezo-resistive film of wherein said conductive filler has D50 size less than 1 μm and D90 less than 2 μm.3. The piezo-resistive film of wherein the primary particle of said conductive filler has an aspect ratio less than 10:1.4. The piezo-resistive film of wherein said conductive filler has a substantially spherical shape claim 1 , potato-like shape claim 1 , rice shape claim 1 , polyhedral shape claim 1 , oblong shape claim 1 , small disc claim 1 , small flake claim 1 , short needle claim 1 , bundle claim 1 , short rod claim 1 , tetra-pod claim 1 , or any other common and practical shapes for nanomaterials.5. The piezo-resistive film of wherein said conductive filler has a loading higher than 15% by volume.6. The piezo-resistive film of wherein said conductive filler comprises at least one of silver claim 1 , gold claim 1 , copper claim 1 , aluminum claim 1 , iron claim 1 , tungsten claim 1 , platinum claim 1 , tin claim 1 , zinc claim 1 , titanium claim 1 , nickel claim 1 , zirconium claim 1 , pure or doped silicon claim 1 , pure or doped silicon germanium claim 1 , or any alloys thereof.7. The piezo-resistive film of wherein said conductive filler comprises at least one of titanium dioxide claim 1 , ruthenium oxide claim 1 , zinc oxide claim 1 , vanadium oxide claim 1 , indium tin oxide claim 1 , copper aluminum oxide claim 1 , doped zinc oxide claim 1 , indium oxide claim 1 , or gallium oxide claim 1 , or any alloys thereof.8. The piezo-resistive film of wherein said conductive filler comprises at least one of carbon black ...

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Номер записи: 34
21-01-2016 дата публикации

PACKAGE MEMS SWITCH AND METHOD

Номер: US20160020051A1
Автор: EID Feras, Ma Qing, Rao Valluri, SWAN Johanna
Принадлежит:

An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

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Номер записи: 35
17-01-2019 дата публикации

ELECTROSTATIC ACTUATOR

Номер: US20190020288A1
Автор: Makinen Ville, Salminen Aki, Tejera-Garcia Roberto
Принадлежит:

An actuator is configured to include a first substrate that has a first conductive surface, which may be or include a first conductive electrode layer. The actuator also includes a second substrate that has a second conductive surface, which may be or include a second conductive electrode layer. The first and second conductive surfaces face toward each other across a compression space between the first and second substrates. A group of elastic support nodules span the compression space and separate the first and second conductive surfaces. The compression space is less than fully filled with solid elastic material and is configured to be compressed by relative movement of the first and second conductive surfaces toward each other in response to a voltage difference between the first and second conductive surfaces. 1. An actuator comprising:a first substrate having a first conductive surface;a second substrate having a second conductive surface, the first and second conductive surfaces facing toward each other across a compression space between the first and second substrates; anda plurality of elastic nodules spanning the compression space and separating the first and second conductive surfaces, the compression space being less than fully filled with solid material and configured to be compressed by relative movement of the first and second conductive surfaces toward each other in response to a voltage difference between the first and second conductive surfaces.2. The actuator of claim 1 , wherein:the first substrate, the second substrate, and the plurality of elastic nodules are included in a flexible substrate.3. The actuator claim 1 , wherein:at least one of the first conductive surface or the second conductive surface is electrically insulated from the plurality of elastic nodules.4. The actuator of claim 1 , wherein:the first and second conductive surfaces are both electrically insulated from the plurality of elastic nodules.5. The actuator of claim 1 , wherein ...

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Номер записи: 36
26-01-2017 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20170022048A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising a moveable beam comprising at least one insulator layer on a lower electrode such that a volume of the lower electrode is adjusted to modify beam bending characteristics; andan upper electrode over the at least one insulator layer on top of the lower electrode,wherein the modified beam bending characteristics are provided over an entire temperature range including a lower limit of about −55° C. to an upper limit of about 125° C., andthe lower electrode has a slotted layout and the upper electrode is thinned to match a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the metal volume of the lower electrode and the metal volume of the upper electrode are further based at least on a layout of the upper electrode.3. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode have identical layouts and same thicknesses.5. The MEMS structure of claim 1 , wherein the moveable beam is formed from one or more metal layers claim 1 , comprising a top metal and a bottom metal with an oxide layer therebetween.6. The MEMS structure of claim 1 , wherein the lower electrode is in a trench.7. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.8. The MEMS ...

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Номер записи: 37
23-01-2020 дата публикации

Planar cavity mems and related structures, methods of manufacture and design structures

Номер: US20200024127A1
Автор: Anthony K. Stamper, Christopher V. Jahnes
Принадлежит: International Business Machines Corp

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

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Номер записи: 38
28-01-2016 дата публикации

Encapsulated micro-electromechanical system switch and method of manufacturing the same

Номер: US20160027601A1
Автор: Jonathan Hale Hammond, Julio C. Costa
Принадлежит: RF Micro Devices Inc

Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A first sacrificial layer is used to form the actuation member of the MEMS switch. A second sacrificial layer is used to form the enclosure that encapsulates the MEMS switch.

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Номер записи: 39
24-01-2019 дата публикации

INTEGRATED ELECTRO-MECHANICAL ACTUATOR

Номер: US20190027331A1
Автор: Despont Michel
Принадлежит:

The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process. 1. A method for manufacturing an integrated electro-mechanical actuator having an electrical contact gap between contact electrodes and an output electrode , said method comprising the steps of:etching a silicon on insulator (SOI) structure to provide two or more beam structures of said electro-mechanical actuator, said beam bodies formed atop an insulator layer of said SOI structure;performing a selective silicidation of said two or more beam structures,forming a sacrificial material layer on top said two or more beam structures,performing a metal deposition on top said formed sacrifical material layer,performing a Chemical Mechanical Polishing (CMP) step to from a flattened surface, and,etching said sacrificial material layer and said insulator layer to separate said beam structures from a substrate of said SOI structure, said beam structures forming said contact electrodes,wherein said electrical contact gap is formed by said etching said sacrificial layer having a thickness corresponding to said electrical contact gap.2. The method as claimed in claim 1 , including forming an actuator electrode between said contact electrodes such that an electrostatic actuator gap lies between actuator electrode and a respective contact electrode claim 1 , wherein said electrostatic actuator gap is formed by said etching said sacrificial layer having a thickness corresponding to said electrostatic ...

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Номер записи: 40
28-01-2021 дата публикации

MICRO-ELECTROMECHANICAL SYSTEM DEVICES AND METHODS

Номер: US20210027965A1
Автор: GU Wenting, Heller Martin, Hocking Andrew, Kerness Nicole, Miller Scott A., OKADA Mizuho, PARK Sangtae, Phillips Randy
Принадлежит:

A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam. 1. A micro-electromechanical system (MEMS) device comprising:a substrate comprising a buried insulator layer and a cavity; anda beam suspended relative to a surface of the substrate, the beam comprising a first portion and a second portion that are separated by an isolation joint,wherein the cavity separates the surface of the substrate from the beam.2. The MEMS device of claim 1 , wherein the buried insulator layer is configured to define the surface of the substrate forming the cavity.3. The MEMS device of claim 1 , wherein the substrate comprises a second buried insulator layer.4. The MEMS device of claim 3 , wherein the second buried insulator is configured to define a depth of the isolation joint in the cavity.5. The MEMS device of claim 3 , wherein the buried insulator layer and the second buried insulator layer define the cavity.6. The MEMS device of claim 1 , wherein the buried insulator layer is configured to define a depth of the isolation joint in the cavity.7. The MEMS device of claim 1 , wherein the cavity is a pre-etched cavity.8. The MEMS device of claim 7 , wherein the pre-etched cavity is disposed below the buried insulator layer.9. The MEMS device of claim 8 , wherein the pre-etched cavity comprises a plurality of depths.10. The MEMS device of claim 1 , wherein:the first and second portions each comprise a semiconductor and a dielectric layer; andan electrically conductive trace is mechanically coupled to the beam and electrically coupled to the semiconductor of the second portion but not the semiconductor of the first portion.11. The MEMS device of claim 10 , further comprising a second beam suspended ...

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Номер записи: 41
05-02-2015 дата публикации

MEMS SWITCH DEVICE AND METHOD OF FABRICATION

Номер: US20150035387A1
Автор: FITZGERALD Padraig L., Goggin Raymond C., Macnamara John G., Stenson Bernard P.
Принадлежит: ANALOG DEVICES TECHNOLOGY

A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module. 1. A microelectromechanical systems (MEMS) switch device including:a substrate layer;an insulating layer formed over the substrate layer; anda MEMS switch module having a plurality of contacts formed on a surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.2. A MEMS switch device according to claim 1 , wherein at least one of the conductive pathways includes a track of conductive material below the surface of the insulating layer and at least one conductive via extending from the track to the surface of the insulating layer.3. A MEMS switch device according to claim 2 , wherein each conductive via is electrically connected to one of the contacts of the MEMS switch module.4. A MEMS switch device according to claim 2 , wherein the track of conductive material comprises aluminum.5. A MEMS switch device according to claim 2 , wherein the conductive via comprises tungsten.6. A MEMS switch device according to claim 1 , wherein at least one of the conductive pathways includes a track of resistive material.7. A MEMS switch device according to claim 6 , wherein the conductive pathway is configured as a resistive circuit element.8. A MEMS switch device according to claim 7 , wherein the MEMS switch module includes a switch beam claim 7 , wherein the resistive circuit element is formed within the insulating layer and is aligned with the switch beam.9. A MEMS switch device according to ...

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Номер записи: 42
01-02-2018 дата публикации

MEMS SWITCH

Номер: US20180033565A1
Автор: Fitzgerald Padraig, Goggin Raymond C., Lambkin Paul, Schirmer Mark, Stenson Bernard Patrick, Wong Jo-ey
Принадлежит:

Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off. 1. A MEMS component , comprising:a substrate;a support;a movable structure connected to the support and extending in a first direction and having a free end delimited by an edge and having a contact carrier extending therefrom;a control electrode;wherein: the support extends from the substrate and holds a portion of the movable structure adjacent the substrate; the movable structure overlaps with the control electrode; the control electrode extends past the edge of the movable structure in the first direction except in a region of a contact carrier portion of the movable structure; a spatial extent of the control electrode in a second direction is greater than the spatial extent of the movable structure in the second direction, and the control electrode is configured to shield the movable structure from charge that gets trapped in the substrate such that the movable structure returns without delay to a rest position when a control voltage which has been applied for more than a day is removed.2. A MEMS component as claimed in in which the movable structure returns without delay to the rest position when the control voltage is removed after being applied for several months.3. A MEMS component as claimed in claim 1 , wherein the second direction is perpendicular to the first direction such that the control electrode extends beyond opposing sides of the movable structure in the second direction.4. A MEMS component as claimed in claim 1 , in which a second portion of the movable structure extends in a third direction from the support claim 1 , the third direction being substantially opposed to the first direction claim 1 , and where the second portion overlaps with a second control electrode.5. A MEMS component as claimed in claim 1 , wherein the movable structure includes a depending bumper ...

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Номер записи: 43
09-02-2017 дата публикации

MEM RELAY ASSEMBLY FOR CALIBRATING AUTOMATED TEST EQUIPMENT

Номер: US20170038453A1
Автор: Hussey Alan
Принадлежит: Teradyne, Inc.

Apparatus and methods for calibrating tester channels of an automated test system are described. A relay matrix assembly comprising a plurality of microelectromechanical (MEM) switches may be used to connect a plurality of tester channels to analyzer calibration instrument rapidly without requiring serial, robotic probing of the test channels. The relay matrix assembly may be constructed on a printed circuit board that can be attached to an interface on the tester. Calibration parameters for the test channels may be calculated from waveforms received through the relay matrix assembly and that have been corrected to remove waveform distortion introduced by the relay matrix assembly. Parameters to correct for distortion in the relay matrix assembly may be measured in advance and stored for use when calibration is to be performed. 1. A method for calibrating a plurality of tester channels of an automated test equipment , the method comprising:connecting inputs of a relay matrix assembly to a plurality of tester channel contacts of the plurality of test channels, wherein the relay matrix assembly comprises a plurality of microelectromechanical (MEM) relays configured to form a plurality of paths between the inputs of the relay matrix assembly and an output of the relay matrix assembly; andsuccessively actuating portions of the MEM relays of the plurality of MEM relays to successively connect tester channels of the plurality of test channels to a calibration instrument coupled to the output of the relay matrix assembly.2. The method of claim 1 , further comprising:measuring with the calibration instrument, a first waveform at the output connector, the waveform passing from a first tester channel through a first path of the plurality of paths; andadjusting the first waveform, based on measured parameters of the first path.3. The method of claim 2 , further comprising:computing calibration parameters for the first channel based on the adjusted waveform.4. The method of ...

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Номер записи: 44
11-02-2016 дата публикации

Solder bump sealing method and device

Номер: US20160042902A1
Автор: Benedikt Zeyen, VIKRAM Patil
Принадлежит: Innovative Micro Technology

A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.

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Номер записи: 45
22-02-2018 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20180050903A1
Автор: HERRIN Russell T., MALING Jeffrey C., Stamper Anthony K.
Принадлежит:

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via. 1. A method in a computer-aided design system for generating a functional design model of a MEMS , the method comprising:generating a functional representation of an electrode remote from a beam structure;generating a functional representation of at least one sacrificial layer over the beam structure, and remote from the electrode;generating a functional representation of a lid structure over the at least one sacrificial layer and the electrode;generating a functional representation of simultaneously providing a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode;generating a functional representation of venting the sacrificial layer to form a cavity; andgenerating a functional representation of forming a final via in the lid structure to the electrode, through the partial via,wherein the partial via has a larger cross section diameter than a remaining portion of the final via, andthe functional design model of the MEMS is generated to manufacture a MEMS device.2. The method of claim 1 , further comprising:generating a functional representation of forming a sacrificial material on ...

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Номер записи: 46
25-02-2016 дата публикации

ELECTROMECHANICAL SWITCHING DEVICE WITH ELECTRODES HAVING 2D LAYERED MATERIALS WITH DISTINCT FUNCTIONAL AREAS

Номер: US20160056003A1
Автор: Duerig Urs T., Knoll Armin W., Koren Elad, Loertscher Emanuel
Принадлежит:

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode. 1. An electromechanical switching device , comprising:a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface;a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; andan actuation mechanism;wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers;the first electrode comprises two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; andat least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.2. The electromechanical switching device of claim 1 , ...

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Номер записи: 47
23-02-2017 дата публикации

ELECTROMECHANICAL POWER SWITCH INTEGRATED CIRCUITS AND DEVICES AND METHODS THEREOF

Номер: US20170053764A1
Автор: Dao Giang Trung, Mori Kiyoshi, Ramon Michael Edward, Tran Ziep
Принадлежит:

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity. 1. A semiconductor device comprising:a semiconductor substrate;at least one integrated circuit device on a front surface of the semiconductor substrate;an insulating layer on the at least one integrated circuit device; and a source and a drain;', 'a body region disposed between the source and the drain, wherein the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween; and', 'a gate including a switching metal layer, wherein the switching metal layer is disposed over the body discontinuity., 'an electromechanical power switch on the insulating layer, the electromechanical power switch including2. The semiconductor device of claim 1 , wherein the switching metal layer has a width less than the distance between the first and second body portions.3. The semiconductor device of claim 1 , further comprising:a first decoupling capacitor including a first dielectric layer formed over at least one of the source and the drain and a first electrode formed over the first dielectric layer.4. The semiconductor device of claim 3 , ...

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Номер записи: 48
01-03-2018 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20180057357A1
Автор: HERRIN Russell T., MALING Jeffrey C., Stamper Anthony K.
Принадлежит:

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via. 1. A method of forming at least one Micro-Electro-Mechanical System (MEMS) , comprising:forming a beam over a first sacrificial layer;forming an insulator layer on the first sacrificial layer;forming a cavity via in the insulator layer, exposing a portion of the first sacrificial layer;forming an electrode on the insulator layer;forming a second sacrificial layer over the beam and in the cavity via;forming a lid material over the second sacrificial layer and the electrode;providing simultaneously a vent hole in the lid material to expose at least the second sacrificial layer and to form a partial via over the electrode;venting the first sacrificial layer and the second sacrificial layer to form at least a lower cavity and an upper cavity, respectively;sealing the vent hole with a dielectric material and a nitride cap; andforming a final via through the lid material by etching the lid material through the partial via, to the electrode,wherein the partial via is formed at a same time as the vent hole, andwherein the vent hole is provided greater than 5 microns away from both the partial via and the final via.2. The method of claim 1 , wherein the ...

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Номер записи: 49
04-03-2021 дата публикации

ELECTRODYNAMICALLY LEVITATED ACTUATOR

Номер: US20210061648A1
Автор: Daeichin Meysam, Miles Ronald, Pallay Mark, Towfighian Shahrzad
Принадлежит:

A microelectromechanical actuator, comprising: a substrate, having a surface; a conductive beam suspended parallel to the substrate, displaceable along an axis normal to the surface of the substrate; a center electrode on the substrate under the beam; a pair of side electrodes on the substrate configured, when charged, to exert an electrostatic force normal to the surface of the substrate on the beam that repulses the beam from the substrate, and exerts a balanced electrostatic force on the beam in a plane of the surface of the substrate, the center conductive electrode being configured to shield the beam from electrostatic forces induced by the side electrodes from beneath the beam, and the center electrode being configured to have a voltage different from a voltage on the beam, to thereby induce an attractive electrostatic force on the beam. 1. A microelectromechanical actuator , comprising:a substrate, having a surface;an electrostatically displaceable conductive element, suspended over the substrate;a center electrode, provided on the substrate under the electrostatically displaceable conductive element; anda peripheral electrode provided on the substrate;wherein:the center electrode is larger than a projection of the electrostatically displaceable conductive element on the substrate, and is configured to shield the electrostatically displaceable conductive element from electrostatic forces induced by the peripheral electrode from beneath the electrostatically displaceable conductive element,the peripheral electrode is configured to exert an electrostatic force normal to the surface of the substrate on the electrostatically displaceable conductive element that repulses the electrostatically displaceable conductive element from the substrate, andthe center electrode is configured to have a voltage different from a voltage on the electrostatically displaceable conductive element, to thereby induce an attractive electrostatic force on the beam.2. The ...

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Номер записи: 50
02-03-2017 дата публикации

Device with separation limiting standoff

Номер: US20170062165A1
Автор: Christopher S. Gudeman, Paul J. Rubel
Принадлежит: Innovative Micro Technology

An MEMS device, having two substantially parallel surfaces are separated by an initial distance. At least one of the surfaces includes a raised feature that limits the gap between the surfaces to less than the initial distance when an actuating voltage is applied. In some embodiments, the raised feature limits the gap to about 66% of the initial distance.

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Номер записи: 51
02-03-2017 дата публикации

RADIO FREQUENCY MICRO-ELECTROMECHANICAL SYSTEMS HAVING INVERTED MICROSTRIP TRANSMISSION LINES AND METHOD OF MAKING THE SAME

Номер: US20170062889A1
Автор: Iannotti Joseph Alfred, Kapusta Christopher James, Keimel Christopher Fred, Lee Yongjae
Принадлежит:

A radio frequency (RF) microelectromechanical system (MEMS) package includes a first mounting substrate, a signal line formed on a top surface of the first mounting substrate, the signal line comprising a MEMS device selectively electrically coupling a first portion of the signal line to a second portion of the signal line, and a ground assembly coupled to the first mounting substrate. The ground assembly includes a second mounting substrate, a ground plane formed on a bottom surface of the second mounting substrate, and at least one electrical interconnect extending through a thickness of the second mounting substrate to contact the ground plane, wherein the ground plane is spaced apart from the signal line. 1. A radio frequency (RF) microelectromechanical system (MEMS) package comprising:a first mounting substrate;a signal line formed on a top surface of the first mounting substrate, the signal line comprising a MEMS device selectively electrically coupling a first portion of the signal line to a second portion of the signal line; and a second mounting substrate;', 'a ground plane formed on a bottom surface of the second mounting substrate; and', 'at least one electrical interconnect extending through a thickness of the second mounting substrate to contact the ground plane;, 'a ground assembly coupled to the first mounting substrate, the ground assembly comprisingwherein the ground plane is spaced apart from the signal line.2. The RF MEMS package of wherein the MEMS device comprises a switch having a first position and a second position;wherein the first portion of the signal line and the second portion of the signal line are electrically coupled when the switch is in the first position; andwherein the first portion of the signal line and the second portion of the signal line are electrically decoupled when the switch is in the second position.3. The RF MEMS package of further comprising at least one post mechanically coupling the ground plane to the first ...

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Номер записи: 52
02-03-2017 дата публикации

RADIO FREQUENCY MICRO-ELECTROMECHANICAL SYSTEMS HAVING INVERTED MICROSTRIP TRANSMISSION LINES AND METHOD OF MAKING THE SAME

Номер: US20170062890A1
Автор: Iannotti Joseph Alfred, Kapusta Christopher James, Keimel Christopher Fred, Lee Yongjae
Принадлежит:

A RF MEMS package includes a MEMS die assembly having a signal line formed on a top surface of a first mounting substrate, the signal line comprising a MEMS device selectively electrically coupling a first portion of the signal line to a second portion of the signal line, and two pairs of ground pads formed on the top surface of the first mounting substrate adjacent respective portions of the signal line. The pairs of ground pads are positioned adjacent respective sides of the MEMS device. A ground assembly is electrically coupled to the pairs of ground pads and includes a second mounting substrate and a ground region formed on a surface of the second mounting substrate. The ground region faces the top surface of the first mounting substrate and is electrically coupled to the pairs of ground pads. A cavity is formed between the ground region and the signal line. 1. A radio frequency (RF) microelectromechanical system (MEMS) package comprising: a first mounting substrate;', 'a signal line formed on a top surface of the first mounting substrate, the signal line comprising a MEMS device selectively electrically coupling a first portion of the signal line to a second portion of the signal line;', 'a first pair of ground pads formed on the top surface of the first mounting substrate adjacent the first portion of the signal line; and', 'a second pair of ground pads formed on the top surface of the first mounting substrate adjacent the second portion of the signal line; and, 'a MEMS die assembly comprising a second mounting substrate; and', 'a ground region formed on a surface of the second mounting substrate facing the top surface of the first mounting substrate and electrically coupled to the first pair of ground pads and the second pair of ground pads;, 'a ground assembly electrically coupled to the first pair of ground pads and the second pair of ground pads, the ground assembly comprisingwherein a cavity is formed between the ground region and the signal line; ...

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Номер записи: 53
04-03-2021 дата публикации

OPTICALLY ISOLATED MICROMACHINED (MEMS) SWITCHES AND RELATED METHODS

Номер: US20210067160A1
Автор: "ODonnell Alan", Coln Michael C.W., Fitzgerald Padraig, Hecht Bruce A., Kierse Olly J., Schirmer Mark, Sheeran James, Stevens Paul W., Twohig Michael James, ZHAO Ying
Принадлежит: Analog Devices Global Unlimited Company

Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate. 1. A system comprising: a micro-electromechanical system (MEMS) structure including a control terminal; and', 'an optical receiver coupled to the control terminal;, 'a package comprisinga light transmitting medium; anda conduit extending from inside the package to outside the package, the conduit configured to route an optical signal to the optical receiver through the light transmitting medium.2. The system of claim 1 , wherein the package is a chip scale package.3. The system of claim 2 , wherein the MEMS structure and the optical receiver are disposed on a common chip within the chip scale package.4. The system of claim 1 , wherein the conduit comprises the light transmitting medium.5. The system of claim 4 , wherein the conduit and the light transmitting medium are configured such that the optical receiver receives the optical signal after it has passed through the light transmitting medium.6. The system of claim 1 , wherein the conduit is configured to receive the optical signal from a light source external to the system.7. The ...

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Номер записи: 54
08-03-2018 дата публикации

METHOD OF MANUFACTURING MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE

Номер: US20180065847A1
Автор: Luce Stephen E., Stamper Anthony K.
Принадлежит:

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first electrode, forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and a second electrode, and the first cantilevered electrode includes an arm with an extending protrusion which extends upward from an upper surface of the arm. 1. A method of fabricating a switch comprising:forming a first cantilevered electrode over a first electrode;forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and the second electrode,wherein the first cantilevered electrode comprises an arm with an extending protrusion which extends upward from an upper surface of the arm.2. The method of claim 1 , further comprising forming a hermetically sealed volume encapsulating the first electrode claim 1 , the second electrode claim 1 , the first cantilevered electrode claim 1 , and the second cantilevered electrode claim 1 ,3. The method of claim 2 , wherein the forming the hermetically sealed volume comprises:forming at least one hole in a nitride liner to gain access to a sacrificial resist;etching the sacrificial resist; andclosing the at least one hole by deposition of additional liner material.4. The method of claim 2 , wherein the hermetically sealed volume comprises nitride.5. The method of claim 2 , wherein the hermetically sealed volume is a dome.6. The method of claim 5 , wherein the dome is oval shaped.7. The method of claim 1 , wherein the second cantilevered electrode has an end which overlaps the first cantilevered electrode.8. The method of claim 7 , wherein overlapping portions of the first cantilevered electrode and the second cantilevered electrode are separated ...

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Номер записи: 55
17-03-2022 дата публикации

MEMS ELEMENT AND ELECTRICAL CIRCUIT

Номер: US20220084767A1
Автор: MASUNISHI KEI, YAMAZAKI Hiroaki
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, a first movable electrode facing the first fixed electrode, a first conductive member electrically connected to the first movable electrode, and a second conductive member electrically connected to the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode. The first conductive member has a meandering structure. The second conductive member includes a first conductive region and a second conductive region. The second conductive region is between the first movable electrode and the first conductive region. A second width of the second conductive region along a second direction is less than a first width of the first conductive region along the second direction. 1. A MEMS element , comprising:a first member; andan element part,{'claim-text': ['a first fixed electrode fixed to the first member,', 'a first movable electrode facing the first fixed electrode,', 'a first conductive member electrically connected to the first movable electrode, and', 'a second conductive member electrically connected to the first movable electrode,'], '#text': 'the element part including'}the first movable electrode being supported by the first and second conductive members to be separated from the first fixed electrode,the first conductive member having a meandering structure,the second conductive member including a first conductive region and a second conductive region,the second conductive region being between the first movable electrode and the first conductive region,a second width of the second conductive region along a second direction being less than a first width of the first conductive region along the second direction,the second direction crossing a first direction from the first movable electrode toward the first ...

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Номер записи: 56
28-02-2019 дата публикации

THERMAL MANAGEMENT IN HIGH POWER RF MEMS SWITCHES

Номер: US20190066957A1
Автор: KNIPE RICHARD L., van Kampen Robertus Petrus
Принадлежит:

The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points. 1. A MEMS device , comprising:a substrate having a plurality of electrodes formed therein, wherein the plurality of electrodes comprises at least an anchor electrode, a pull-in electrode and an RF electrode;a first insulating layer disposed over the plurality of electrodes and the substrate;a switching element disposed over the insulating layer, wherein the switching element includes an anchor portion, a leg portion and a bridge portion and wherein the anchor portion is electrically coupled to the anchor electrode;a first post coupled to the RF electrode; anda second post electrically coupled to the anchor electrode, wherein the switching element is movable between a first position spaced from the first post and the second post, and a second position in contact with the first post and the second post.2. The MEMS device of claim 1 , wherein the second post comprises an electrically and thermally conductive material.3. The MEMS device of claim 2 , wherein the switching element has a bottom surface that has a first portion that is both electrically and thermally conductive and a second portion that is electrically insulating.4. The MEMS device of claim 1 , wherein the second post and the first post each have a top surface and wherein the top surface comprises the same material.5. The MEMS device of claim 1 , wherein the second post is positioned at a location such that the bridge portion is in contact with the second post when the switching element is in the second position.6. The MEMS device of claim 1 , wherein the first post is positioned at a location such that the anchor portion is in contact with the first post when the switching element is in ...

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Номер записи: 57
28-02-2019 дата публикации

NATURALLY CLOSED MEMS SWITCH FOR ESD PROTECTION

Номер: US20190066958A1
Автор: Barron Lance, Gaddi Roberto, KNIPE RICHARD L., van Kampen Robertus Petrus
Принадлежит:

The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage. 1. A MEMS device , comprising:a substrate having a first anchor electrode and an RF electrode disposed therein;a switching element comprising a stress layer, a bottom layer and a top layer, wherein the bottom layer is coupled to the top layer at a first end and the bottom layer is coupled to the anchor electrode at the second end and wherein the stress layer is under tensile stress and wherein the stress layer is in contact with a bottom surface of the bottom layer.2. The MEMS device of claim 1 , further comprising an anchor contact disposed between the anchor electrode and the bottom layer.3. The MEMS device of claim 1 , further comprising a second anchor electrode claim 1 , wherein the switching element is spaced from and electrically isolated from the second anchor electrode such that the switching element naturally deflects downward towards the RF electrode.4. The MEMS device of claim 1 , further comprising an RF contact disposed on the RF electrode claim 1 , wherein the stress layer moves from a position in contact with the RF contact and a position spaced from the RF contact.5. The MEMS device of claim 4 , further comprising an insulating layer disposed on a bottom surface of the stress layer claim 4 , where the insulating layer has an opening at a location corresponding to the RF contact such that a portion of the stress layer is exposed to make contact with the RF contact.6. The MEMS device of claim 1 , wherein the stress in the stress layer is more tensile than the stress in the bottom layer.7. The MEMS device of claim 1 , further comprising an insulating layer disposed on a bottom surface of the stress layer claim 1 , where the insulating layer has an opening at a location corresponding to the RF electrode such that a portion of the stress ...

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Номер записи: 58
10-03-2016 дата публикации

Method and technique to control mems dvc control waveform for lifetime enhancement

Номер: US20160072408A1
Автор: Cong Quoc Khieu, James Douglas HUFFMAN, Richard L. Knipe, Robertus Petrus Van Kampen, Vikram Joshi
Принадлежит: Cavendish Kinetics Inc

The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

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Номер записи: 59
19-03-2015 дата публикации

HIGH VOLTAGE CONTROL WITH DIGITAL MEMS LOGIC

Номер: US20150075957A1
Автор: Frankel Michael Y.
Принадлежит: Ciena Corporation

A complex logic gate comprising digital MEM switches, coupled to a high voltage MEMS buffer, to provide a high voltage depending upon gate and body voltages of the digital MEM switches. 1. An apparatus comprising:a Vdd voltage rail;a Vdd0 voltage rail;a reference rail; anda plurality of MEM (Micro-Electro-Mechanical) switch pairs, each pair comprising a first MEM switch and a second MEM switch, each first and second MEM switches in each pair comprising a first source/drain, a second source/drain, a gate, and a body;wherein all first MEM switches in the plurality of pairs are logically connected;wherein for each pair, the first source/drain of the first MEM switch is connected to the first source/drain of the second MEM switch;wherein the second source/drain of each second MEM switch is connected to the reference rail;wherein for a first subset of the pairs, the body of each first MEM switch in the first subset is connected to the reference rail and the body of each second MEM switch in the first subset is connected to the Vdd0 voltage rail;wherein a first pair in the plurality of pairs has the second source/drain of its first MEM switch connected to the Vdd voltage rail; anda MEMS (Micro-Electro-Mechanical System) buffer having an input port connected to the source/drain of the second MEM switch in a last pair of the plurality of pairs.2. The apparatus of claim 1 , wherein for a second subset complementary to the first subset of the pairs claim 1 , the body of each first MEM switch in the second subset is connected to the Vdd0 voltage rail and the body of each second MEM switch in the second subset is connected to the reference rail.3. The apparatus of claim 1 , wherein the Vdd voltage rail is equivalent to the Vdd0 voltage rail.4. The apparatus of claim 1 , further comprising a Vpull-in voltage rail claim 1 , wherein the MEMS buffer comprises:an output port;a first MEM switch having a gate connected to the input port, a body connected to the reference rail, a first ...

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Номер записи: 60
15-03-2018 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20180072566A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising:a moveable beam comprising at least one insulator layer on a lower electrode; andan upper electrode over the at least one insulator layer,wherein the lower electrode and the upper electrode are asymmetric or different, and a thickness of one of the lower electrode and the upper electrode with a lower pattern factor is thickened to balance a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the upper electrode is deposited within tapered vias of the at least one insulator layer.3. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 3 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.5. The MEMS structure of claim 4 , wherein a coefficient of thermal expansion (CTE) of the lower electrode and the upper electrode is approximated by AlCu.6. The MEMS structure of claim 1 , wherein one of the lower electrode and the upper electrode is a slotted or holed layout and one of the upper electrode and the lower electrode claim 1 , respectively claim 1 , has a thickness of the slotted or holed layout claim 1 , to match the metal volume of the lower electrode with the metal volume of the upper electrode.7. The MEMS structure of claim 1 , wherein a pattern factor ratio of the lower electrode to the upper electrode comprises 0.8:1.8. ...

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Номер записи: 61
15-03-2018 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20180072567A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A Micro-Electro-Mechanical System (MEMS) structure comprising:a moveable beam comprising at least one insulator layer on a lower electrode; andan upper electrode over the at least one insulator layer,wherein the lower electrode has a slotted layout to match a metal volume of the lower electrode with a metal volume of the upper electrode.2. The MEMS structure of claim 1 , wherein the metal volume of the lower electrode and the metal volume of the upper electrode are based at least on a layout of the upper electrode.3. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode are formed of a same material.4. The MEMS structure of claim 2 , wherein the lower electrode and the upper electrode have identical layouts and same thicknesses.5. The MEMS structure of claim 1 , wherein the moveable beam is formed from one or more metal layers claim 1 , comprising a top metal and a bottom metal with an oxide layer therebetween.6. The MEMS structure of claim 1 , wherein the lower electrode is in a trench.7. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are composed of Ti/AlCu/Ti/TiN.8. The MEMS structure of claim 1 , wherein the upper electrode is U-shaped with a via between opposing sides of the upper electrode.9. The MEMS structure of claim 1 , wherein the lower electrode and the upper electrode are asymmetric relative to one another.10. The MEMS structure of claim 1 , wherein the upper electrode is thinned compared to the ...

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Номер записи: 62
15-03-2018 дата публикации

Planar cavity mems and related structures, methods of manufacture and design structures

Номер: US20180072568A1
Автор: Anthony K. Stamper, John G. Twombly
Принадлежит: International Business Machines Corp

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

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Номер записи: 63
07-03-2019 дата публикации

ELECTROMECHANICAL RELAY DEVICE

Номер: US20190074152A1
Автор: Boodhoo Liam Anand, Chong Harold Meng Hoon, Pamunuwa Dinesh, Rana Sunil
Принадлежит:

A electromechanical relay device () comprising a source electrode (), a beam () mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode () located adjacent a second end of the beam, wherein a first contact () on the beam is arranged to be separated from a second contact () on the first drain electrode when the relay device is in a first condition; a first gate electrode ( arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite. 1. An electromechanical relay device comprising:a source electrode;a beam electrically coupled to the source electrode;a first drain electrode located adjacent a first contact on the beam, wherein the first contact is arranged to be separated from a second contact on the first drain electrode when the relay device is in a first condition; anda first gate electrode arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition,wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.2. An electromechanical relay device according to claim 1 , wherein the majority of the electromechanical relay device is coated with a layer of nanocrystalline graphite.3. An electromechanical relay device according to claim 1 , further comprising a conductive layer provided underneath the nanocrystalline graphite layer.4. An electromechanical relay device according to claim 1 , wherein the beam and the source electrode are integrally formed as a single unit.5. An electromechanical relay device according to claim 1 , further comprising a second gate electrode and a second drain electrode claim 1 , wherein the first gate electrode is located along one side of the beam and the second gate ...

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Номер записи: 64
15-03-2018 дата публикации

CONTACT SURFACE FOR MEMS DEVICE

Номер: US20180075994A1
Автор: Gudeman Christopher S.
Принадлежит: Innovative Micro Technology

Systems and methods for forming an electrostatic MEMS switch that is used to hot switch a source of current or voltage. At least one surface of the MEMS switch is treated with an ion milling machine to reduce surface roughness to less than about 10 nm rms. 1. A MEMS device , comprising:at least one first contact surface in the MEMS device, wherein the at least one first contact surface has a surface roughness of less than about 10 nm rms;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'and a second contact surface, wherein the first and the second contact surface are configured to be in physical and electrical contact during at least a portion of the MEMS device operation. The MEMS device of , wherein the MEMS device is at least one of a sensor, a switch and an actuator.'}2. The MEMS device of claim 1 , wherein the first and second contact surfaces comprise at least one of gold claim 1 , silver claim 1 , Ru claim 1 , Pd claim 1 , RuOtin and nickel.3. The MEMS device of claim 1 , wherein the MEMS device is a hot switch claim 1 , wherein the hot switch closes by touching the first to the second contact surface with a voltage differential between the first and the second surfaces.4. The MEMS device of claim 1 , wherein both the first contact surface and the second contact surface have a surface roughness of less than about 10 nm rms.5. The MEMS device of claim 1 , wherein the MEMS device further comprises a MEMS switch formed with two substrates claim 1 , with at least one contact surface on each substrate claim 1 , wherein the switch is formed when the two substrates are bonded together.6. The MEMS device of claim 6 , wherein the MEMS switch is electrostatically actuated.7. The MEMS device of claim 7 , wherein when the MEMS switch is electrostatically actuated claim 7 , a shunt bar on one substrate spans two contact surfaces on the other substrate claim 7 , thereby closing the switch claim 7 , and where both the shunt bar and the contact surfaces have a surface ...

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Номер записи: 65
14-03-2019 дата публикации

ZERO-POWER SENSOR APPARATUS, METHOD, AND APPLICATIONS

Номер: US20190078913A1
Автор: Lal Amit, Molnar Alyosha
Принадлежит: CORNELL UNIVERSITY

A zero power sensor node includes a sensor suite including two or more different types of zero power sensors, particularly including at least two of a zero power PZT-bimorph accelerometer, a zero power PZT-bimorph rotation sensor, a zero power PZT-bimorph magnetic sensor, a zero power PZT-bimorph gyroscope, and a zero power acoustic sensor, which may be a PZT-bimorph acoustic sensor or an resonant cavity, and a near zero power-consuming, multi gate electrostatic switch. The node output can send a wake-up signal to trigger a higher power consuming device. 1. A zero-power sensor suite , comprising:a zero-power PZT-bimorph magnetic sensor;a zero-power PZT-bimorph accelerometer; anda zero-power PZT-bimorph rotation sensor, wherein all of the sensors are disposed on a single plate.2. The zero-power sensor suite of claim 1 , further comprising a zero-power PZT-bimorph acoustic sensor.3. The zero-power sensor suite of claim 1 , further comprising a zero-power PZT-bimorph gyroscope sensor.4. The zero-power sensor suite of claim 1 , wherein the zero-power PZT-bimorph accelerometer comprises a bimorph cantilever and a proof mass attached to an end of the bimorph cantilever.5. The zero-power sensor suite of claim 1 , wherein the zero-power PZT-bimorph accelerometer is characterized by a resonance from 10 Hz to 5 kHz.6. The zero-power sensor suite of claim 1 , wherein the zero-power PZT-bimorph rotation sensor comprises a plurality of the zero-power PZT-bimorph accelerometers arranged in a radial claim 1 , hub/spoke geometry.7. The zero-power sensor suite of claim 1 , wherein the zero-power PZT-bimorph rotation sensor has an output dependent on the square of the angular rotation rate.8. The zero-power sensor suite of claim 1 , wherein the zero-power PZT-bimorph magnetic sensor comprises a magnet attached to a PZT bimorph.9. The zero-power sensor suite of claim 2 , wherein the zero-power PZT-bimorph acoustic sensor comprises a lateral PZT-bimorph and a flap attached to the ...

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Номер записи: 66
22-03-2018 дата публикации

PROTECTION SCHEMES FOR MEMS SWITCH DEVICES

Номер: US20180083439A1
Автор: Fitzgerald Padraig Liam, Parthasarathy Srivatsan, Salcedo Javier A.
Принадлежит:

Micro-electromechanical switch (MEMS) devices can be fabricated using integrated circuit fabrication techniques and materials. Such switch devices can provide cycle life and insertion loss performance suiting for use in a broad range of applications including, for example, automated test equipment (ATE), switching for measurement instrumentation (such as a spectrum analyzer, network analyzer, or communication test system), and uses in communication systems, such as for signal processing. MEMS devices can be vulnerable to electrical over-stress, such as associated with electrostatic discharge (ESD) transient events. A solid-state clamp circuit can be incorporated in a MEMS device package to protect one or more MEMS devices from damaging overvoltage conditions. The clamp circuit can include single or multiple blocking junction structures having complementary current-voltage relationships, such as to help linearize a capacitance-to-voltage relationship presented by the clamp circuit. 1. An electronic circuit having a micro-electromechanical device and a solid-state clamp circuit , the electronic circuit comprising: a first substrate;', 'an integrated micro-electromechanical switch device located upon or within the first substrate;', 'a hermetic enclosure defining a hermetically isolated region to isolate the integrated micro-electromechanical switch device from a surrounding environment, the hermetic enclosure comprising an electrically-insulating material;', 'a solid-state clamp circuit electrically coupled to the micro-electromechanical switch and configured to suppress or inhibit damage to the micro-electromechanical switch due to a transient overvoltage condition; and', 'a control circuit electrically coupled to the integrated micro-electromechanical switch, the control circuit configured to receive a logic-level signal and to provide a control signal to electrostatically actuate the micro-electromechanical switch in response to the received logic-level signal., ' ...

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Номер записи: 67
19-06-2014 дата публикации

Three-dimensional inter-chip contact through vertical displacement mems

Номер: US20140166461A1
Автор: Kenneth J. Goodnow, Peter A. Twombly, Stephen G. Shuma, Todd E. Leonard
Принадлежит: International Business Machines Corp

An electrically conducting, vertically displacing microelectromechanical system (MEMS) is formed on a first integrated circuit chip. The first integrated circuit chip is physically connected to a three-dimensional packaging structure. The three-dimensional packaging structure maintains a fixed distance between the first integrated circuit chip and a second integrated circuit chip. A control circuit is operatively connected to the MEMS. The control circuit directs movement of the MEMS between a first position and a second position. The MEMS makes contact with a contact pad on the second integrated circuit chip when it is in the second position forming a conductive path and providing electrical communication between the first integrated circuit chip and the second integrated circuit chip. The MEMS avoids making contact with the contact pad on the second integrated circuit chip when it is in the first position.

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Номер записи: 68
19-06-2014 дата публикации

Planar cavity mems and related structures, methods of manufacture and design structures

Номер: US20140166463A1
Автор: Anthony K. Stamper, Christopher V. Jahnes
Принадлежит: International Business Machines Corp

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

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Номер записи: 69
19-06-2014 дата публикации

Ultrananocrystalline Diamond Films With Optimized Dielectric Properties For Advanced RF MEMS Capacitive Switches

Номер: US20140167168A1
Автор: AUCIELLO Orlando H., Mancini Derrick C., SUMANT Anirudha V.
Принадлежит: UCHICAGO ARGONNE, LLC

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems. 1. A process for use in fabricating a radio frequency (RF) microelectromechanical systems (MEMS) capacitive switch , comprising the steps of:providing a bottom electrode; andlayering ultrananocrystalline diamond (UNCD) on the bottom electrode to provide a multilayered UNCD dielectric film having electrical leaky characteristics on the bottom electrode for fast dielectric charging and discharging and rapid recovery of the RF MEMS capacitive switch.2. A process for use in fabricating a RF MEMS capacitive switch in accordance with wherein the layering comprises depositing layers of UNCD by microwave plasma chemical vapor deposition (CVD) with microwave CVD plasma.3. A process for use in fabricating a RF MEMS capacitive switch in accordance with including forming a layer of substantially continuous dielectric film with rapid nucleation of UNCD by decreasing hydrogen (H) content of the microwave CVD plasma.4. A process for use in fabricating a RF MEMS capacitive switch in accordance with including increasing hydrogen (H) content of the microwave CVD plasma to form a high resistivity layer of film with a hydrogen-enriched grain boundary.5. A process for use in fabricating a RF MEMS capacitive switch in accordance with including decreasing hydrogen (H) content of the microwave CVD plasma for dense renucleation of the UNCD for filing in gaps or pinholes between grains and forming a substantially uniform continuous layer.6. ...

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Номер записи: 70
12-03-2020 дата публикации

PASSIVE WIRELESS SWITCH CIRCUIT AND RELATED APPARATUS

Номер: US20200083010A1
Автор: Khlat Nadim
Принадлежит:

A passive wireless switch circuit and related apparatus are provided. In examples discussed herein, an apparatus includes a smaller number of voltage circuits configured to control a larger number of microelectromechanical systems (MEMS) switches. The voltage circuits passively generate a number of constant voltages based on a number of radio frequency (RF) signals to collectively identify each of the MEMS switches. A decoder circuit decodes the constant voltages to identify a selected MEMS switch and provides a selected constant voltage higher than a defined threshold voltage to close the selected MEMS switch. As such, it may be possible to eliminate active components and/or circuits from the passive wireless switch circuit, thus helping to reduce leakage and power consumption. It may be further possible to reduce conductive traces between the voltage circuits and the MEMS switches, thus helping to reduce routing complexity and footprint of the apparatus. 1. An apparatus comprising: absorb a first number of radio frequency (RF) signals in a first number of selected frequency bandwidths and corresponding to a first number of RF voltages, respectively; and', 'generate a first number of constant voltages based on the first number of RF voltages, respectively;, 'a first number of voltage circuits configured toa second number of microelectromechanical systems (MEMS) switches each configured to be closed in response to receiving a selected constant voltage exceeding a defined threshold voltage; and receive the first number of constant voltages from the first number of voltage circuits, respectively;', 'decode the first number of constant voltages to determine a selected MEMS switch among the second number of MEMS switches; and', 'provide the selected constant voltage among the first number of constant voltages to the selected MEMS switch to close the selected MEMS switch., 'a decoder circuit coupled between the first number of voltage circuits and the second number of ...

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Номер записи: 71
12-03-2020 дата публикации

ELECTRICALLY CONTROLLABLE INTEGRATED SWITCH

Номер: US20200083011A1
Автор: Arrazat Brice, Di-Giacomo Antonio, Fornara Pascal, Rivero Christian
Принадлежит:

Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure. 1. A method , comprising: a beam held by the structure at a pivot point, the beam extending in a cavity of a back end of line region of a semiconductor device, the back end of line region comprising a plurality of metallization levels disposed in one or more insulating layers; and', 'a first contact region extending into the cavity adjacent the beam, wherein the beam, the structure, and the first contact region are formed from a same metallization level of the plurality of metallization levels; and, 'applying a first potential to a first part of a structure of a switching device, the switching device comprisingpivoting, by the beam, in a first direction in response to the applying of the first potential, causing the beam to contact the first contact region.2. The method according claim 1 , further comprising:applying a second potential to a second part of the structure of the switching device; andpivoting, by the beam, in a second direction in response to the applying of the second potential, causing the beam to contact a second contact region, wherein the second contact region is electrically isolated from the ...

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Номер записи: 72
31-03-2016 дата публикации

Compliant electrostatic transfer head with defined cavity

Номер: US20160094160A1
Автор: Andreas Bibl, Dariusz Golda, Jeffrey Birkmeyer, John A. Higginson, Stephen P. Bathurst
Принадлежит: LuxVue Technology Corp

A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a base substrate, a cavity template layer on the base substrate, a first confinement layer between the base substrate and the cavity template layer, and a patterned device layer on the cavity template layer. The patterned device layer includes an electrode that is deflectable toward a cavity in the cavity template layer. In an embodiment, a second confinement layer is between the cavity template layer and the patterned device layer.

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Номер записи: 73
21-03-2019 дата публикации

MEMS MEMBRANE WITH INTEGRATED TRANSMISSION LINE

Номер: US20190088435A1
Автор: Stefanini Romain, Zahr Abedel Halim, ZHANG Ling Yan
Принадлежит: AIRMEMS

A micro-electromechanical-system (MEMS) switch () is formed in a substrate () and includes a first RF signal line () and a second RF signal line (), a deformable membrane (), an activator () configured to deform the membrane (), a substrate track, and a membrane track. The RF signal lines () are connected by one of the membrane track and the substrate track. A membrane RF ground () is integrated into the membrane (), and the membrane RF ground is electrically connected to a substrate RF ground (), the membrane RF ground framing and being formed parallel to at least one among the membrane track () and the substrate track, such that the RF ground () closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line () to the second RF signal line () when the switch is in the on state. 2. The micro-electromechanical switch (MEMS) according to claim 1 , wherein the membrane track is connected at one end to the first RF signal line and the substrate track is connected to the second RF signal line claim 1 , the on state of the switch being made in the deformed state of the membrane claim 1 , and the off state of the switch being made in a nondeformed state of the membrane.3. The micro-electromechanical switch (MEMS) according to claim 1 , wherein the first RF signal line and the second RF signal line are connected by the membrane track claim 1 , the substrate track being connected to the RF ground claim 1 , the off state of the switch being made in the deformed state of the membrane claim 1 , and the on state of the switch being made in the nondeformed state of the membrane.4. The micro-electromechanical switch (MEMS) according to claim 1 , wherein the first RF signal line and the second RF signal line are connected by the substrate track claim 1 , the membrane track being connected to the RF ground claim 1 , the off state of the switch being made in the deformed state of the membrane claim 1 , and the on state of the switch ...

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Номер записи: 74
05-05-2022 дата публикации

MEMS SWITCH WITH MULTIPLE PULL-DOWN ELECTRODES BETWEEN TERMINAL ELECTRODES

Номер: US20220139656A1
Автор: Gaddi Roberto
Принадлежит:

The disclosure is directed to microelectromechanical system (MEMS) switches with multiple pull-down electrodes between terminal electrodes to limit off-state capacitance. In exemplary aspects disclosed herein, a plurality of pull-down electrodes are positioned between the input terminal electrode and the output terminal electrode. The plurality of pull-down electrodes are offset from each other to limit off-state capacitance between the input terminal electrode and the output terminal electrode. The separation between the pull-down electrodes disrupts the off-state capacitive path between the input terminal electrode and the output terminal electrode, thereby further insulating the contacts from each other. Limiting off-state capacitance reduces on-state electrical loss and increases off-state electrical isolation for improved performance.

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Номер записи: 75
05-04-2018 дата публикации

METHOD OF MANUFACTURING MEMS SWITCHES WITH REDUCED SWITCHING VOLTAGE

Номер: US20180093884A1
Автор: Luce Stephen E., Stamper Anthony K.
Принадлежит:

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm. 1. A method of fabricating a switch comprising:forming a first cantilevered electrode;forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode; andforming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.2. The method of claim 1 , further comprising forming a hermetically sealed volume encapsulating the electrode claim 1 , the first cantilevered electrode claim 1 , and the second cantilevered electrode.3. The method of claim 2 , wherein the forming the hermetically sealed volume comprises:forming at least one hole in a nitride liner to gain access to a sacrificial resist;etching the sacrificial resist; andclosing the at least one hole by deposition of additional liner material.4. The method of claim 2 , wherein the hermetically sealed volume is formed with a nitride liner.5. The method of claim 2 , wherein the hermetically sealed volume is a dome.6. The method of claim 5 , wherein the dome is oval shaped.7. The method of claim 1 , wherein the second cantilevered electrode is formed with an end which overlaps the first cantilevered electrode.8. The method of claim 7 , wherein overlapping portions of the first cantilevered electrode and the second cantilevered electrode are separated by a vertical distance of about two microns.9. The method of claim 1 , wherein the second cantilevered electrode is formed above the first cantilevered electrode.10. The method of claim 1 , wherein ...

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Номер записи: 76
07-04-2016 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20160099124A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A design structure comprising data tangibly embodied in a a machine readable storage medium for designing , manufacturing , or simulating a moveable beam , the data when processed on a data processing system generate a functional representation of the moveable beam , comprising:at least one insulator layer on a conductor layer such that a volume of the conductor is adjusted to modify beam bending characteristics.2. The design structure of claim 1 , further comprising:an upper electrode over the at least one insulator layer on top of the conductor layer,wherein a metal volume of the conductor layer and a metal volume of the upper electrode are based at least on the layout of the conductor layer.3. The design structure of claim 2 , wherein the conductor layer and the upper electrode are a same material claim 2 , and the conductor layer and the upper electrode are composed of Ti/AlCu/Ti/TiN.4. The design structure of claim 2 , wherein the conductor layer and the upper electrode are asymmetric relative to one another.5. The design structure of claim 2 , wherein the conductor layer and the upper electrode are different in thicknesses relative to one another.6. A design structure comprising data tangibly embodied in a a machine readable storage medium for designing claim 2 , manufacturing claim 2 , or simulating a moveable beam claim 2 , the data when processed on a data processing system generate a functional representation of the moveable beam claim 2 , comprising:at least one ...

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Номер записи: 77
05-04-2018 дата публикации

ELECTROMECHANICAL SWITCHING DEVICE WITH ELECTRODES HAVING 2D LAYERED MATERIALS WITH DISTINCT FUNCTIONAL AREAS

Номер: US20180096812A1
Автор: Duerig Urs T., Knoll Armin W., Koren Elad, Loertscher Emanuel
Принадлежит:

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode. 1. An electromechanical switching device , comprising:a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface and a first magnetic domain, the first magnetic domain comprising a first uniform magnetization direction;a second electrode stacked over the first electrode, comprising layers of a second 2D layered material, which layers exhibit a first portion comprising a first surface and a first magnetic domain and a second portion comprising a second surface and a second magnetic domain, the first magnetic domain of the second electrode comprising the first uniform magnetization direction and the second magnetic domain of the second electrode comprising a second uniform magnetization direction opposite the first direction, the first and second surfaces of the second electrode opposite the first surface of the first electrode; andan actuation mechanism;wherein at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation ...

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Номер записи: 78
03-07-2014 дата публикации

Electric equipment having movable portion, and its manufacture

Номер: US20140183014A1
Автор: Hiroaki Inoue, Xiaoyu Mi
Принадлежит: Fujitsu Ltd

On seed metal layer of first metal, pedestal and counter electrode are formed of second metal by plating, adjacent to free space region. The free space region is filled with first sacrificial layer. By using resist pattern, second sacrificial metal layer is formed, extending from the first sacrificial layer to a portion of the pedestal, and lower structure of third metal is formed on the second sacrificial layer, by contiguous plating, exposing a portion of the pedestal not formed with the second sacrificial layer, the third metal having composition and thermal expansion coefficient equivalent to the second metal. Upper structure of fourth metal having composition and thermal expansion coefficient equivalent to the second and third metals is formed on the pedestal and the lower structure by plating. The first and second sacrificial layers are removed, leaving an electric equipment with a movable portion.

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Номер записи: 79
03-07-2014 дата публикации

Electrostatic micro relay and manufacturing method for the same

Номер: US20140184352A1
Автор: Daisuke Morihara, Takahiro Masuda, Yasuhiro Horimoto
Принадлежит: Omron Corp

An electrostatic micro relay has a substrate, a signal line arranged on the substrate and having an input point configured to receive a signal and a plurality of signal channels configured to distribute the signal, the plurality of signal channels being each formed with a fixed contact, a plurality of movable contacts, each provided with respect to each of the fixed contacts and arranged so as to be opposed to a corresponding fixed contact across a space, a plurality of movable electrodes, each connected to each of the plurality of movable contacts and configured to make the connected movable contact brought into contact with and separated from the corresponding fixed contact, a cap, formed with a space configured to house the plurality of movable electrodes, and bonded with the substrate, and a signal input portion.

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Номер записи: 80
02-04-2020 дата публикации

MEMS DEVICES AND CIRCUITS INCLUDING SAME

Номер: US20200102213A1
Автор: HARIDAS Nakul, STEEL Victor
Принадлежит:

A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices. 1. A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor , the MEMS bridge comprising an electrically conductive switching portion , the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region , the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a ...

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Номер записи: 81
26-04-2018 дата публикации

SYSTEMS AND METHODS FOR MEMS-BASED CROSS-POINT ELECTRICAL SWITCHING

Номер: US20180111825A1
Автор: Frankel Michael Y., MATEOSKY John P.
Принадлежит:

An electrical cross-point switch N inputs, each at least 10 Gbps, connected to input transmission lines; M outputs, each at least 10 Gbps, connected to output transmission lines; at least two Radio Frequency (RF) Microelectromechanical systems (MEMS) switches selectively interconnecting each input transmission line and each output transmission line; and control and addressing circuitry configured to selectively control interconnection of each input transmission line and each output transmission line via the at least two RF MEMS switches. The at least two RF MEMS switches can be embedded in each input transmission line and each output transmission line. The input transmission lines and the output transmission lines can each be partially shielded microwave transmission lines. 1. An electrical cross-point switch , comprising:N inputs, each at least 10 Gbps, connected to input transmission lines;M outputs, each at least 10 Gbps, connected to output transmission lines;at least two Radio Frequency (RF) Microelectromechanical systems (MEMS) switches selectively interconnecting each input transmission line and each output transmission line; andcontrol and addressing circuitry configured to selectively control interconnection of each input transmission line and each output transmission line via the at least two RF MEMS switches.2. The electrical cross-point switch of claim 1 , wherein the at least two RF MEMS switches are embedded in each input transmission line and each output transmission line.3. The electrical cross-point switch of claim 1 , wherein the input transmission lines and the output transmission lines are each partially shielded microwave transmission lines.4. The electrical cross-point switch of claim 1 , wherein N and M are equal and greater than or equal to 32.5. The electrical cross-point switch of claim 1 , wherein the at least two RF MEMS switches are each formed on a first die with the input transmission lines and the output transmission lines claim 1 , ...

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Номер записи: 82
26-04-2018 дата публикации

OPTICAL SENSOR HAVING VARIABLE MEASURING CHANNELS

Номер: US20180112971A1
Автор: CHARDONNENS Julien, ILG Patrick, Jensen Thomas, LEIMGRUBER Lorenz, NARDULLI Alessandro
Принадлежит: TESA SA

Optical sensors are adapted for distance measurement by emission and capture of measuring radiation reflected from an object to be measured. The optical sensors can be used with measuring devices, including coordinate measuring machines. The optical sensors have an optomechanical coupling unit, configured for automated coupling of the optical sensor to the measuring device and for bidirectional measuring radiation transmission between measuring device and optical sensor. The optical sensors have a first optical measuring channel, by which bidirectional measuring radiation transmission is provided between the measuring device and a first exit window of the optical sensor. The optical sensors have a second optical measuring channel, by which bidirectional measuring radiation transmission is provided between the measuring device and a second exit window of the optical sensor, and a switch for controlled variation of the measuring radiation transmission between at least the first or the second optical measuring channel. 1. (canceled)2. An optical sensor for a measuring device for measuring distance by emitting radiation towards an object and capturing the reflected radiation , the optical sensor comprising:an optomechanical coupling unit for automated coupling of the optical sensor to the measuring device and providing a bidirectional transmission of radiation between the measuring device and the optical sensor;a first optical measuring channel, providing bidirectional transmission of radiation between the measuring device and a first exit window of the optical sensor;a second optical measuring channel, also providing bidirectional transmission of radiation between the measuring device and a second exit window of the optical sensor; anda switch for controlled variation of a provision of the transmission of measuring radiation, the variation being providable at least between the first or the second optical measuring channel,wherein the first and the second optical ...

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Номер записи: 83
27-04-2017 дата публикации

AUXILIARY CIRCUIT FOR MICRO-ELECTROMECHANICAL SYSTEM RELAY CIRCUIT

Номер: US20170117109A1
Автор: CLAYDON Glenn Scott, Giovanniello, JR. Christian Michael, Keimel Christopher Fred, Liu Yanfei
Принадлежит:

A switching system includes a MEMS switching circuit having a MEMS switch and a driver circuit. An auxiliary circuit is coupled in parallel with the MEMS switching circuit, the auxiliary circuit comprising first and second connections that connect the auxiliary circuit to the MEMS switching circuit on opposing sides of the MEMS switch, first and second solid state switches connected in parallel, and a resonant circuit connected between the first and second solid state switches. A control circuit controls selective switching of a load current towards the MEMS switching circuit and the auxiliary circuit by selectively activating the first and second solid state switches and the resonant circuit so as to limit a voltage across the MEMS switch by diverting at least a portion of the load current away from the MEMS switch to flow to the auxiliary circuit prior to the MEMS switch changing state. 1. A switching system , comprising:a micro-electromechanical system (MEMS) switching circuit including a MEMS switch and a driver circuit, the MEMS switching circuit connectable to a power circuit to receive a load current therefrom;an auxiliary circuit coupled in parallel with the MEMS switching circuit; anda control circuit operably connected to the MEMS switching circuit and the auxiliary circuit to control selective switching of a load current towards the MEMS switching circuit and the auxiliary circuit; first and second connections that connect the auxiliary circuit to the MEMS switching circuit on opposing sides of the MEMS switch;', 'a first solid state switch;', 'a second solid state switch connected in parallel with the first solid state switch; and', 'a resonant circuit connected between the first solid state switch and the second solid state switch;, 'wherein the auxiliary circuit compriseswherein the first solid state switch, the second solid state switch and the resonant circuit are selectively activated by the control circuit to limit a voltage across the MEMS switch ...

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Номер записи: 84
27-04-2017 дата публикации

Micro-electromechanical system relay circuit

Номер: US20170117110A1
Автор: Christian Michael Giovanniello, JR., Christopher Fred Keimel, Glenn Scott Claydon, Yanfei Liu
Принадлежит: General Electric Co

A switching system includes a MEMS switching circuit having a MEMS switch and a driver circuit, and an auxiliary circuit coupled in parallel with the MEMS switching circuit that comprises solid state switching circuitry. A control circuit in communication with the MEMS switching circuit and the auxiliary circuit performs selective switching of a load current towards the MEMS switching circuitry and the auxiliary circuit, with the control circuit programmed to transmit a control signal to the driver circuit to cause the MEMS switch to actuate to an open or closed position across a switching interval, activate the auxiliary circuit during the switching interval when the MEMS switch is switching between the open and closed positions, and deactivate the auxiliary circuit upon reaching the open or closed position after completion of the switching interval, such that the load current selectively flows through the MEMS switch and the solid state switching circuitry.

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Номер записи: 85
18-04-2019 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20190115179A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes. 1. A method of manufacturing a MEMS structure , comprising:forming fixed actuator electrodes and a contact point;forming a MEMS beam over the fixed actuator electrodes and the contact point; andforming an array of actuator bumps in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from contacting an actuator portion of the fixed actuator electrodes, wherein the array of actuator bumps are in direct contact with and extending from at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes, and the array of actuator bumps are composed of a dielectric material.2. The method of claim 1 , wherein the array of actuator bumps are formed with a predetermined height and width.3. The method of claim 1 , wherein the array of actuator bumps are formed under an insulator material and between portions of conductive material forming the MEMS beam.4. The method of claim 1 , wherein an additional array of actuator bumps are formed on a wiring layer claim 1 , and extend towards the MEMS beam.5. The method of claim 1 , wherein the array of actuator bumps are formed to extend downward from the MEMS beam.6. The method of claim 1 , wherein the array ...

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Номер записи: 86
24-07-2014 дата публикации

LOW-COST PROCESS-INDEPENDENT RF MEMS SWITCH

Номер: US20140202837A1
Автор: FRUEHLING Adam Joseph, Peroulis Dimitrios
Принадлежит: PURDUE RESEARCH FOUNDATION

A MEMS switch includes a semiconductor substrate, a movable cantilever and a cantilever anchor. The semiconductor substrate includes a device layer and a handle. The movable cantilever is formed in the semiconductor substrate, and is disposed over a void in the handle. The cantilever anchor is formed in the semiconductor substrate and defines a side wall of the void. A metal portion is formed on at least a portion of the movable cantilever. A metal contact is formed proximate an end of the movable cantilever. A biasing metal contact is formed adjacent the cantilever. The biasing metal contact is electrically disconnected from the metal contact. 1. A MEMS switch , comprising:a semiconductor substrate including a device layer and a handle;a movable cantilever formed in the semiconductor substrate, the cantilever disposed over a void in the handle;a cantilever anchor formed in the semiconductor substrate and defining a side wall of the void;a metal portion formed on at least a portion of the movable cantilever;a metal contact formed proximate an end of the movable cantilever; anda biasing metal contact formed adjacent the cantilever, the biasing metal contact electrically disconnected from the metal contact.2. The MEMS switch of claim 1 , wherein the void defines a chamber including a bottom wall and sidewalls formed in the handle.3. The MEMS switch of claim 1 , further comprising an oxide layer between the device layer and the box.4. The MEMS switch of claim 3 , wherein the void is formed in the handle substrate below a level of the buried oxide layer.5. The MEMS switch of claim 4 , wherein a first part of the metal contact is disposed on the device layer.6. The MEMS switch of claim 1 , including at least one dielectric layer formed in the movable cantilever.7. The MEMS switch of claim 6 , wherein a first part of the metal contact is disposed on the dielectric layer disposed on the device layer.8. A MEMS switch claim 6 , comprising:a semiconductor substrate having a ...

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Номер записи: 87
24-07-2014 дата публикации

ELECTRONIC COMPONENT

Номер: US20140202838A1
Автор: FUJIWARA Takeshi, Maruyama Hidenori, SANO Akihiko, Seki Tomonori
Принадлежит: Omron Corporation

An electronic component has a first member in which an electrostatic actuator is provided, a second member in which a drive integrated circuit for driving the electrostatic actuator is provided, and join parts that joins the first member and the second member while a surface on which the electrostatic actuator is provided in the first member and a surface on which the drive integrated circuit is provided in the second member are opposed to each other. The electrostatic actuator and the drive integrated circuit are disposed in a space surrounded by the first member, the second member, and the join parts. 1. An electronic component comprising:a first member in which an electrostatic actuator is provided;a second member in which a drive integrated circuit for driving the electrostatic actuator is provided; andjoin parts that join the first member and the second member while a surface on which the electrostatic actuator is provided in the first member and a surface on which the drive integrated circuit is provided in the second member are opposed to each other,wherein the electrostatic actuator and the drive integrated circuit are disposed in a space surrounded by the first member, the second member, and the join parts.2. The electronic component according to claim 1 ,wherein the drive integrated circuit comprises a capacitor, andwherein the capacitor is disposed such that a direction of an electric field generated in the capacitor intersects a direction of an electric field driving the electrostatic actuator.3. The electronic component according to claim 2 , wherein the direction of the electric field generated in the capacitor is orthogonal to the direction of the electric field driving the electrostatic actuator.4. The electronic component according to claim 2 , wherein the capacitor comprises an electrostatic capacity larger than that of the electrostatic actuator.5. The electronic component according to claim 1 , wherein the drive integrated circuit comprises a DC- ...

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Номер записи: 88
04-05-2017 дата публикации

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20170121170A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending. 1. A structure , comprising:at least one insulator layer on a conductor layer such that a volume of the conductor is adjusted to modify beam bending characteristics, and an upper electrode and the conductor layer are composed of Ti/AlCu/Ti/TiN,wherein the modified beam bending characteristics are provided over an entire temperature range including a lower limit of about −55° C. to an upper limit of about 125° C.2. The structure of claim 1 , wherein the conductor layer is in a trench.3. The structure of claim 1 , wherein the upper electrode is U-shaped with a via between opposing sides of the upper electrode.4. The structure of claim 1 , wherein the upper electrode is over the at least one insulator layer on top of the conductor layer.5. The structure of claim 4 , wherein a metal volume of the conductor layer and a metal volume of the upper electrode are based at least on the layout of the conductor layer.6. The structure of claim 4 , wherein the conductor layer and the upper electrode are different in thicknesses relative to one another claim 4 , with a metal volume of the upper electrode and the conductor layer being balanced.7. The structure of claim 4 , wherein the conductor layer and the upper electrode are asymmetric relative to one another.8. The structure of claim 7 , wherein the conductor layer has diamond patterned shapes removed such that the conductor layer is asymmetric relative to the upper electrode.9. The structure of claim 1 , wherein the conductor layer has a ...

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Номер записи: 89
05-05-2016 дата публикации

MEMS SWITCH AND METHOD OF MANUFACTURING THE SAME

Номер: US20160126045A1
Автор: CHEON Seong Jong
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

A microelectromechanical systems (MEMS) switch includes: a signal line disposed on a substrate; a dielectric member attached to the substrate; support fixtures disposed on the substrate at opposing sides of the signal line; and a membrane having ends fixed to the support fixtures, and a protrusion-recess pattern having a corrugated structure, the membrane being configured to change a capacitance provided by the membrane and the dielectric member by being positioned adjacent to the dielectric member through a downward movement. 1. A microelectromechanical systems (MEMS) switch comprising:a signal line disposed on a substrate;a dielectric member attached to the signal line;support fixtures disposed on the substrate at opposing sides of the signal line; anda membrane comprising ends fixed to the support fixtures, and a protrusion-recess pattern having a corrugated structure, the membrane being configured to change a capacitance provided by the membrane and the dielectric member by being positioned adjacent to the dielectric member through a downward movement.2. The MEMS switch of claim 1 , wherein the protrusion-recess pattern includes a plurality of protrusions and recesses.3. The MEMS switch of claim 1 , wherein a number of protrusions and recesses of the protrusion-recess pattern is determined based on a direct current (DC) voltage applied to the signal line and a limit of elasticity of the membrane.4. The MEMS switch of claim 1 , wherein the membrane is configured to move closer to the dielectric member by the downward movement as a direct current (DC) voltage applied to the signal line is increased.5. The MEMS switch of claim 1 , wherein the capacitance provided by the membrane and the dielectric member is increased as a direct current (DC) voltage applied to the signal line is increased.6. The MEMS switch of claim 1 , wherein the membrane is connected to a ground through the support fixtures.7. The MEMS switch of claim 1 , wherein a radio frequency (RF) signal ...

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Номер записи: 90
03-05-2018 дата публикации

ELECTROMECHANICAL POWER SWITCH INTEGRATED CIRCUITS AND DEVICES AND METHODS THEREOF

Номер: US20180122605A1
Автор: Dao Giang Trung, Mori Kiyoshi, Ramon Michael Edward, Tran Ziep
Принадлежит:

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity. 1. (canceled)2. A semiconductor device comprising:a semiconductor substrate including at least one integrated circuit device on a front surface of the semiconductor substrate;an insulating layer on the front surface including over the at least one integrated circuit device;an electromechanical power switch on the insulating layer, wherein the electromechanical power switch includes a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer; anda first decoupling capacitor formed over at least one of the source and the drain.3. The semiconductor device of claim 2 , wherein the first decoupling capacitor includes a 3D capacitor having a plurality of 3D features.4. The semiconductor device of claim 3 , wherein the plurality of 3D features include at least one of fins claim 3 , ridges claim 3 , valleys claim 3 , or mesas.5. The semiconductor device of claim 3 , wherein the plurality of 3D features include 3D metal features claim 3 , and wherein the first decoupling capacitor further includes a dielectric layer formed over the 3D metal features and an electrode ...

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Номер записи: 91
04-05-2017 дата публикации

Zero Power Radio Frequency Receiver

Номер: US20170126263A1
Автор: Cassella Cristian, Duwel Amy, EGRI Robert, McGRUER Nicol, Rinaldi Matteo, Weinberg Marc S.
Принадлежит:

A zero power radio frequency (RF) activated wake up device is provided. The device is based on a high-Q MEMS demodulator that filters an amplitude-modulated RF tone of interest from the entire spectrum while producing a much higher voltage signal suitable to trigger a high-Q MEMS resonant switch tuned to the modulation frequency of the RF tone. 1. A zero power radio frequency receiver comprising:a radio frequency antenna;a microelectromechanical voltage transformer having an input and an output, wherein the input is connected to the antenna, wherein the transformer amplifies an amplitude modulated radio frequency (RF) input signal received by the antenna, and wherein the transformer provides a modulation frequency of the input signal at the transformer output;a resonant detector switch connected to the output of the transformer and tuned to the modulation frequency, the switch comprising a low adhesion contact that closes in response to the modulation frequency; anda power source that drives a wakeup circuit, wherein the wakeup circuit is closed by closing of the low adhesion contact.2. The receiver of claim 1 , further comprising a threshold switch comprising a threshold contact residing in the wakeup circuit claim 1 , the threshold switch connected to the resonant detector switch claim 1 , wherein the threshold contact closes the wakeup circuit in response to closing of said low adhesion contact.3. The receiver of or claim 1 , wherein the closed wakeup circuit produces a wakeup signal for an electronic device.4. The receiver of claim 3 , further comprising an input capacitance that loads the output of the transformer and an output capacitance that loads the wakeup circuit claim 3 , wherein the input capacitance stores charge used to activate the threshold switch claim 3 , and wherein the output capacitance stores charge used to produce the wakeup signal.5. The receiver of claim 1 , wherein the power source is a battery.6. The receiver of claim 1 , wherein the ...

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Номер записи: 92
31-07-2014 дата публикации

MEMS SWITCHES AND FABRICATION METHODS

Номер: US20140209442A1
Автор: Gambino Jeffrey P., Mongeon Stephen A.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections. 1. A microelectromechanical (MEMS) switch formed on a supporting layer having a top surface , the MEMS device comprising:a stationary electrode including a conductive layer with a vertical orientation relative to the top surface of the supporting layer;at least one drive electrode; anda deflection electrode including a conductive layer with a vertical orientation relative to the top surface of the supporting layer, and the deflection electrode configured to be electrostatically attracted toward the at least one drive electrode, when the at least one drive electrode is electrically biased, with a cantilevered motion so that the conductive layer of the deflection electrode contacts the conductive layer of the stationary electrode.2. The MEMS switch of wherein the stationary electrode is positioned on the top surface of the supporting layer such that the conductive layer of the stationary electrode and that the conductive layer of the deflection electrode have respective confronting surfaces.3. The MEMS switch of wherein the confronting surface of the conductive layer of the deflection electrode has a larger surface area than the confronting surface of the conductive layer of the stationary electrode.4. The MEMS switch of wherein the at least ...

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Номер записи: 93
11-05-2017 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHODS OF MANUFACTURE AND DESIGN STRUCTURES

Номер: US20170133185A1
Автор: JAHNES Christopher V., Stamper Anthony K.
Принадлежит:

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes. 1. A MEMS structure , comprising:a first set of wires on a substrate, comprising fixed actuator electrodes and a contact;a MEMS beam comprising a second set of wires above the first set of wires; andan array of mini-bumps between the first set of wires and the second set of wires, wherein the array of mini-bumps prevent portions of the second set of wires from contacting the fixed actuator electrodes, upon actuation.2. The MEMS structure of claim 1 , wherein the array of mini-bumps are formed in alignment with the fixed actuator electrodes under the MEMS beam.3. The MEMS structure of claim 1 , wherein the array of mini-bumps are in alignment with spaces or openings between the fixed actuator electrodes under the MEMS beam so as to land on substrate when the MEMS beam is actuated downward.4. The MEMS structure of claim 1 , wherein:the array of mini-bumps are in alignment with dummy actuator electrodes in a fixed actuator level under the MEMS beam; and 'individually electrically floating electrodes; and', 'the dummy actuator electrodes are one ofconnected individually electrically floating electrodes.5. The MEMS structure of claim 1 , wherein the array of mini-bumps are in alignment with insulator material between portions of ...

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Номер записи: 94
01-09-2022 дата публикации

Arrangement of MEMS Switches

Номер: US20220277913A1
Автор: Lambrecht Franziska, Schwarz Markus
Принадлежит: SIEMENS AKTIENGESELLSCHAFT

Various embodiments include an arrangement comprising a plurality of MEMS switches with movable elements. The plurality of MEMS switches are connected to one another in a total-cross-tied configuration. 1. An arrangement comprising:a plurality of MEMS switches with movable elements;wherein the plurality of MEMS switches are connected to one another in a total-cross-tied configuration.2. The arrangement as claimed in claim 1 , wherein the MEMS switches are arranged like a matrix.3. The arrangement as claimed in claim 1 , further comprising conductor connections extending along at least two planes spaced apart from one another.4. The arrangement as claimed in claim 1 , wherein the movable element of each MEMS switch comprises a respective bending element.5. The arrangement as claimed in claim 3 , wherein each of the MEMS switches comprises:a respective first electrical contact on the first movable element; anda respective second electrical mating contact;wherein the first contact is located on a first one of the planes and the second contact is located on a second one of the planes.6. The arrangement as claimed in claim 3 , further comprising gate contacts located in the first plane and/or the second plane.7. The arrangement as claimed in claim 1 , wherein:the MEMS switches each include a first part and a second part;wherein the first part comprises a silicon substrate and/or the second part comprises a glass wafer.8. The arrangement as claimed in claim 7 , wherein the first part comprises a silicon-on-insulator substrate.9. The arrangement as claimed in claim 7 , wherein:the first plane is arranged on the first part and the second plane is arranged on the second part; and/orthe first plane is arranged on the second part and the second plane is arranged on the first part. This application is a U.S. National Stage Application of International Application No. PCT/EP2020/071269 filed Jul. 28, 2020, which designates the United States of America, and claims priority to DE ...

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Номер записи: 95
19-05-2016 дата публикации

CAPACITIVE MICROELECTROMECHANICAL SWITCHES WITH DYNAMIC SOFT-LANDING

Номер: US20160141133A1
Автор: ALAM Muhammad Ashraful, Jain Ankit, Nair Pradeep
Принадлежит: PURDUE RESEARCH FOUNDATION

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state. 1. A microelectromechanical system (MEMS)-based electrical switch system , comprising: a moveable electrode,', 'a dielectric layer disposed adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the switch is in an inactivated position and in contact with the moveable electrode when the switch is in an activated position, and', 'a substrate attached to the dielectric layer on a second side opposite to the first side,, 'at least one electrical switch, comprisingat least one voltage source coupled to the switch; and 'the resistive element is configured to brake movement of the moveable electrode prior to coming in contact with the dielectric layer when the voltage source causes the switch to be switched between the inactivated state and the activated state;', 'at least one resistive element positioned in series between the switch and the voltage source,'}the moveable electrode is formed from a plurality of electrically connected structures that are spaced from one another and held together by an insulator, the electrically connected structures forming a pattern of raised portions on the insulator.2. The system of claim 1 , the resistive element is a resistor.3. The system of claim 1 , the resistive element ...

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Номер записи: 96
17-05-2018 дата публикации

PACKAGE MEMS SWITCH AND METHOD

Номер: US20180138001A1
Автор: EID Feras, Ma Qing, Rao Valluri, Swan Johanna M.
Принадлежит:

An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches. 1. An electronic device , comprising:a semiconductor chip coupled to a package substrate; a conductive trace;', 'a conductive beam housed within a package substrate dielectric, the conductive beam having at least one end that is exposed within the dielectric and is free to move;', 'wherein the at least one end is spaced apart from a corresponding conductive trace by a gap;, 'at least one switch housed at least partially within the package substrate, the switch including;'}a magnetic component configured to provide at least a portion of an actuation force to move the at least one end; andan electrostatic mechanism configured to provide at least a portion of the actuation force to move or hold in place the at least one end adjacent to the conductive trace.2. The electronic device of claim 1 , wherein the gap is between approximately 10-15 micrometers.3. The electronic device of claim 1 , wherein the package substrate dielectric includes an organic dielectric.4. The electronic device of claim 1 , further including a second dielectric between the conductive beam and the conductive trace to form a capacitive switch.5. The electronic device of claim 4 , wherein he second dielectric includes silicon nitride.6. The electronic device of claim 1 , wherein the one end of the conductive beam is fixed to the package substrate to form a cantilever switch.7. The electronic device of claim 1 , wherein both ends of the conductive beam are free to move claim 1 , forming a shunt switch.8. The electronic device of claim 1 , further including ground traces adjacent to the conductive trace on the same package level to form a co-planar waveguide.9. The electronic device ...

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Номер записи: 97
14-08-2014 дата публикации

Vertical electromechanical switch device and method for manufacturing the same

Номер: US20140225167A1
Автор: Ann Witvrouw, Maliheh Ramezani, Stefan Cosemans
Принадлежит: Interuniversitair Microelektronica Centrum vzw IMEC, Katholieke Universiteit Leuven

The disclosed technology relates generally to electromechanical devices, and relates more specifically to a nanoelectromechanical switch device and a method for manufacturing the same. In one aspect, an electromechanical device includes a first electrode stack and a second electrode stack, both electrode stacks extending in a vertical direction relative to a substrate surface and being spaced apart by a gap. The electromechanical device additionally includes a third electrode stack comprising a beam extending in a vertical direction in the electrode gap and being spaced apart from the first electrode stack by a first gap, from the second electrode stack by a second gap, and from the substrate by a third gap; and a connector portion overlapping the first and second electrode stacks, wherein, in operation, the beam is movable in a first direction so as to electrically connect with the first electrode stack or in a second direction so as to electrically connect with the second electrode stack, and, in a rest position, the beam is isolated from the first and the second electrode stacks. Additionally, at least one of the first or second electrode stacks comprises two electrodes including a top electrode stacked over a bottom electrode, wherein the top and bottom electrodes are separated by an electrical insulator.

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Номер записи: 98
26-05-2016 дата публикации

ELECTROMECHANICAL SWITCHING DEVICE WITH ELECTRODES HAVING 2D LAYERED MATERIALS WITH DISTINCT FUNCTIONAL AREAS

Номер: US20160148770A1
Автор: Duerig Urs T., Knoll Armin W., Koren Elad, Loertscher Emanuel
Принадлежит:

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode. 1. A method of operating an electromechanical switching device , the method comprising:actuating, via an actuation mechanism, at least one of a first electrode and a second electrode;the first electrode comprising layers of a first 2D layered material, which layers exhibit a first surface;the second electrode comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; andwherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers;the first electrode comprising two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; andwherein actuation of at least one of the first electrode and the second electrode modifies an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second ...

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Номер записи: 99
10-06-2021 дата публикации

MEMS ELEMENT AND ELECTRICAL CIRCUIT

Номер: US20210175035A1
Автор: MASUNISHI KEI, YAMAZAKI Hiroaki
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, a first movable electrode facing the first fixed electrode, a first conductive member electrically connected to the first movable electrode, and a second conductive member electrically connected to the first movable electrode. The first conductive member and the second conductive member support the first movable electrode to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member and the second conductive member are in a broken state in a second state after the first electrical signal is applied between the second conductive member and the first fixed electrode. 1. A MEMS element , comprising:a first member; andan element part, a first fixed electrode fixed to the first member,', 'a first movable electrode facing the first fixed electrode,', 'a first conductive member electrically connected to the first movable electrode, and', 'a second conductive member electrically connected to the first movable electrode,, 'the element part including'}the first conductive member and the second conductive member supporting the first movable electrode to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode,the first conductive member and the second conductive member being in a broken state in a second state after the first electrical signal is applied between the second conductive member and the first fixed electrode.2. The element according to claim 1 , whereina rigidity of the first conductive member is different from a rigidity of the second conductive member.3. The element according to claim 1 , whereinthe first conductive member has a first length along ...

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Номер записи: 100