КАТОДОЛЮМИНЕСЦЕНТНЫЙ ЭКРАН

Изобретение относится к низковольтным средствам отображения информации на основе катодолюминесценции и может быть использовано при разработке устройств для создания экранов цифровых и буквенно-цифровых индикаторов, универсальных панелей для визуализации отображения любой информации - текстовой, знаковой, графической, отсчетных устройств аналоговых и дискретно-аналоговых измерительных приборов, используемых в калькуляторах, часах, индикаторных табло коллективного пользования. Технический результат - упрощение технологических процессов при изготовлении катодолюминесцентного экрана, обеспечение его более высокими функциональными параметрами. Достигается тем, что в катодолюминесцентном экране, содержащем вакуумную оболочку, составленную из двух плоских стеклянных прозрачных лицевой пластины с анодными электродами, покрытыми прозрачным проводящим слоем и люминофором по крайней мере одного цвета, и подложки с плоскими эмиттерами, образующими светоизлучающую ячейку-пиксель, соединенными через ...

СПОСОБ ИЗГОТОВЛЕНИЯ ВТОРИЧНО-ЭМИССИОННОГО КАТОДА

Использование: область электронной техники при производстве приборов СВЧ-типа средней мощности. Сущность изобретения: на поверхности металлосплавного эмиттера Pd-Ba создают слой толщиной 2-3 мкм путем ионно-плазменного напыления пленочной композиции, содержащей палладий и 20-22 мас.% оксида магния и последующего высокотемпературного прогрева при давлении остаточных газов не выше 10-4 Па. 1 табл.

Катод для электровакуумных приборов (его варианты) и способ его изготовления

... 1. КатоА для электровакуумных приборов,,содержащий керн из тугоплавкого металла, йа котором расположен губчатый слой, из порошка этого же металла , запоянемный частицами эмиссионного вещества на соединения металлов III А группы периодической системы, отличающийся тем, что, с целью повышения устойчивости к воздействию электронной бомбардировки и увеличения долговечности катода, частицы эмиссионного вещества покрыты пленкой ренита металла эмиссионного вещества и рения толщиной 10-100 А. 2. Способ изготовления катода для электровакуумных приборов, включающий операцию введения эмиссионного вещества на основе соединения металлов III А группы периодиче ской системы в губчатый слой, отличающийс я тем, что частицы эмиссионного вещества предварительно смачивают раствором рениевой кислоты или спиртовым раствором окислов рения в количестве 1т10 в пересчете на чистый рений по отношению к весу эмиссионного вещества , затем эмиссионное вещество прокаливают в водороде при 450бОО С в течение 20-30 мин.

Вторичноэлектронный эмиттер

Способ изготовления эмиттера вторичных электронов

Материал для вторичноэлектронных эмиттеров

Вторичноэлектронный эмиттер

Sekundaeremissionsfaehige Elektrode

Improvements in or relating to secondary electron emitting electrodes

Secondary electron emitting electrodes are made of or covered with an alloy of copper, nickel, molybdenum, tantalum, aluminium, gold, or iron with a metal of low work function such as barium, strontium, or preferably beryllium, for example 0,1-10 per cent. Particular examples consist of copper or nickel with 2,5 per cent of beryllium.

SECONDARY ELECTRON EMISSION SURFACE

A secondary electron emission surface is formed by oxidising the surface of an aluminium metal layer deposited onto a plate of nickel or another metal or onto a ceramic plate by vacuum deposition.

Improvements in or relating to electron discharge devices employing secondary electron emission and electrodes for use therein

... 670,607. Electrode materials. ELECTRIC & MUSICAL INDUSTRIES, Ltd. Oct. 26, 1946 [Nov. 7, 1945], No. 16103/50. Divided out of 670,561. Class 39 (i). A secondary electron emitting material comprises an oxide or oxides selected from the group magnesium oxide, aluminium oxide and beryllium oxide in which is dispersed a metal, e.g. gold, silver or copper, which is removed by electron bombardment when exposed thereto so that the selected oxide or oxides is continually exposed. The base of the electrode may comprise nickel, gold-plated molybdenum or platinum. Nickel is usually coated with magnesium to a thickness of 10-6 inches. Magnesium oxide added to a colloidal suspension of gold in water is sprayed on to a thickness of at least 10-4 inches, or magnesium oxide added to an oily suspension of gold is burnt on the base, the coating being afterwards formed at red heat in air. Specifications 601,966, 670,554 and 670,561 are referred to.

Improvements in or relating to nickel-base compositions

An alloy particularly for secondary emission purposes, consists of nickel and a metal of sub-group IIA of the periodic table, the said metal being present in an amount greater than that which can be taken into solid solution in the nickel, but not more than 10 per cent. The alloy is softened by heating, e.g. to 1100 DEG C., followed by quenching, reheated to a temperature, e.g. 450 DEG C. and for a period suitable to homogenize the alloy and then reheated to a higher temperature, e.g. about 800 DEG C. for about 6 hours, in an oxidizing atmosphere. Before the second heating the alloy may be subjected to pressure, e.g. about 10 kg./cm2 at a temperature slightly below the melting point of the alloy. The use of alloys containing 2.5-4.5 per cent of beryllium and of alloys containing 0.6-2 per cent of magnesium is referred to.

Procedure and arrangement for the protection of secondary emission layers.

Glass for use in a dynode

Diamond supported photocathodes for electron sources

ELECTRON MULTIPLIERS WITH DISCRETE DYNODE SEPARATING ELEMENTS

... -10- PHB. 32,626. An electron multiplier using a laminated channel plate assembly. The electron multiplier is usable in display tubes and image intensifiers. A problem in channel plate electron multipliers is to space apart accurately the dynodes in a simple and inexpensive way. In the present invention this problem is overcome by using discrete separating elements such as ballotini to space apart the dynodes. The elements are bonded to the surface of one dynode of adjacent pairs of dynodes and is either bonded to or clamped against the other dynode of the pair. Various methods of making the laminated channel plate assembly are disclosed.

Elektrische Entladungsröhre.

Elektrische Entladungsröhre.

Elektrische Entladungsröhre.

Verfahren zur Herstellung einer elektrischen Entladungsröhre mit einer Sekundäremissionselektrode.

Elektrische Entladungsröhre.

Elektronenentladungsvorrichtung mit einer Sekundäremissionselektrode und Verfahren zum Herstellen derselben.

Verstärkendes Elektronenentladungsgefäss mit einer Sekundäremissionselektrode und Verfahren zu dessen Herstellung.

Sekundärelektronen aussendender Körper.

Verfahren zur Herstellung einer Kautschukmilchkomposition.

Dispositif électronique

Elektronenröhre

Verfahren zur Herstellung einer Kanalbildverstärkervorrichtung

Electric discharge element

Cold cathode for magnetron

Sleep with being able of secondary emission high

Electron multiplier formed by twisting fingers in parallel plates

Improvements to valve control mechanisms for internal combustion engines

Electron Source

Improvements brought to the tubes with electric shocks

Color tube having channel electron multiplier and screen pattern of concentric areas luminescent in different colors

CHANNEL INTENSIFIER GLASS COMPOSITIONS

Cathode with secondary, and proceeded emission for its manufacture

SURFACE-EMISSION CATHODES HAVING CANTILEVERED ELECTRODES

A surface-emission cathode formed on an insulating surface having cantilevered, i.e. "undercut," electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10-7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm-1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Alkali metal generating agent, alkali metal generator, photoelectric surface, secondary electron emission surface, electron tube, method for manufacturing photoelectric surface, method for manufacturing secondary electron emission surface, and method for manufacturing electron tube

The present invention relates to an alkali metal generating agent and others for formation of a photo-cathode or a secondary-electron emitting surface capable of stably generating an alkali metal. The alkali metal generating agent is used in formation of a photo-cathode for emitting a photoelectron corresponding to incident light, or in formation of a secondary-electron emitting surface for emitting secondary electrons corresponding to an incident electron. Particularly, the alkali metal generating agent contains at least an oxidizer comprising at least one vanadate with an alkali metal ion as a counter cation, and a reducer for reducing the ion. An alkali metal generating device comprises at least the alkali metal generating agent and a case housing it, and the case is provided with a discharge port for discharging the vapor of the alkali metal.

Аlkаli mеtаl gеnеrаting аgеnt, аlkаli mеtаl gеnеrаtоr, phоtоеlесtriс surfасе, sесоndаrу еlесtrоn еmissiоn surfасе, еlесtrоn tubе, mеthоd fоr mаnufасturing phоtоеlесtriс surfасе, mеthоd fоr mаnufасturing sесоndаrу еlесtrоn еmissiоn surfасе, аnd mеthоd fоr mаnufасturing еlесtrоn tubе

Тhе prеsеnt invеntiоn rеlаtеs tо аn аlkаli mеtаl gеnеrаting аgеnt аnd оthеrs fоr fоrmаtiоn оf а phоtо-саthоdе оr а sесоndаrу-еlесtrоn еmitting surfасе саpаblе оf stаblу gеnеrаting аn аlkаli mеtаl. Тhе аlkаli mеtаl gеnеrаting аgеnt is usеd in fоrmаtiоn оf а phоtо-саthоdе fоr еmitting а phоtоеlесtrоn соrrеspоnding tо inсidеnt light, оr in fоrmаtiоn оf а sесоndаrу-еlесtrоn еmitting surfасе fоr еmitting sесоndаrу еlесtrоns соrrеspоnding tо аn inсidеnt еlесtrоn. Раrtiсulаrlу, thе аlkаli mеtаl gеnеrаting аgеnt соntаins аt lеаst аn охidizеr соmprising аt lеаst оnе vаnаdаtе with аn аlkаli mеtаl iоn аs а соuntеr саtiоn, аnd а rеduсеr fоr rеduсing thе iоn. Аn аlkаli mеtаl gеnеrаting dеviсе соmprisеs аt lеаst thе аlkаli mеtаl gеnеrаting аgеnt аnd а саsе hоusing it, аnd thе саsе is prоvidеd with а disсhаrgе pоrt fоr disсhаrging thе vаpоr оf thе аlkаli mеtаl.

PHOTOELECTRIC SURFACE, SECONDARY ELECTRON SURFACE, AND ELECTRONIC TUBE

PROBLEM TO BE SOLVED: To allow film formation on low softening substrate or low melting- point substrate and provide a photoelectric surface with high quantum efficiency, by making the photoelectric surface or emitting photoelectrons with incident light out of amorphous diamond or a material mainly composed of the amorphous diamond. SOLUTION: A photoelectric surface 19 formed by laminating an alkaline metal layer 15 on a hydrogen terminal layer 13 in which surface carbon atoms are hydrogenated is formed on a photoelectron-emitting layer 11 of amorphous diamond is formed on a MgF2 substrate 17. The amorphous diamond has a disordered bonding structure where carbon atoms have a tetrahedral coordination in sp3 hybrid orbital function of electrons. Since the amorphous diamond primarily has an amorphous structure where carbon atoms in the tetrahedral coordination provide a disordered network, an energy level occurs at a forbidden band end, a broad spectrum is provided, film formation at a low ...

SECONDARY ELECTRON MULTIPLYING ELECTRODE AND PHOTOMULTIPLIER

PURPOSE: To enhance a secondary electron multiplication factor of a secondary electron multiplying electrode used in a photomultiplier by forming an intermediate layer mainly composed of magnesium oxide on a metallic backing board, and forming an antimony layer on it. CONSTITUTION: In a secondary electron multiplying electrode used in a dynode having a circular gauge structure of a side-on type photomultiplier, an intermediate layer mainly composed of magnesium oxide is interposed between a backing board and an antimony layer. A nickel plate and a copper beryllium alloy plate are particularly preferable as the backing board, and even an aluminium plate and a stainless steel plate fulfill a sufficient effect to improve a secondary electron emitting effect. Even when oxidation treatment is performed on an alloy plate with silver or a surface of the backing board, an improvement in a secondary electron multiplication factor by an intermediate layer of magnesium oxide can be confirmed. COPYRIGHT ...

МЕТАЛЛОСПЛАВНОЙ КАТОД И СПОСОБ ЕГО ДИФФУЗИОННОЙ СВАРКИ

Использование: электровакуумные приборы. Сущность изобретения: в металлосильный катод, содержащий подложку и фольгу эмиссионного сплава введена спираль из проволоки тугоплавкого металла и навита таким образом, что выступающая ее часть из фольги равна половине диаметра проволоки (1/2d), а минимальный шаг между витками равен 2d. Фольгу, подложку катода и спираль собирают под диффузионную сварку, устанавливают в обойму с втулкой из пластичного материала, нагревают в вакууме, прикладывают давление путем осадки втулки и деталей катода и охлаждают. Давление до достижения температуры 0,8 температуры сварки прикладывают по механической двухсторонней осадки втулки между пуансонами, а затем реализуют схему одностороннего ее выдавливания из объема, ограниченного обоймой, пуансонами и подложкой катода. 2 с.п. ф-лы, 3 ил.

СПОСОБ ПОЛУЧЕНИЯ КАТОДНОГО МАТЕРИАЛА НА ОСНОВЕ МЕТАЛЛА ПЛАТИНОВОЙ ГРУППЫ И БАРИЯ

ПРЕССОВАННЫЙ МЕТАЛЛОСПЛАВНЫЙ ПАЛЛАДИЙ-БАРИЕВЫЙ КАТОД И СПОСОБ ЕГО ПОЛУЧЕНИЯ

Вторичноэлектронный эмиттер, работающийНА пРОСТРЕл

Вторично-эмиссионный катод

Вторично-электронный эмиттер

Материал для вторичноэлектронных эмиттеров

Эмиттер вторичных электронов

I.ЭМИТТЕР ВТОРИЧНЫХ ЭЛЕКТРОНОВ , содержащий слой полупроводникового материала с поверхностным покрытием , снижающим работу выхода до состояния отрицательного электронного сродства, о т л и ча ющи и ся тем, что, с цельн) сужения энергетического спектра вторичных электронов, слой полупроводникового материала выполнен на основе твердого раствора прямозонного и непрямозонного полупроводников , взаимная концентрация которых обеспечивает совпадение энергий прямого и непрямого переходов в твердом растворе. . 2. Эмиттер, по п. 1, о т л и ч aiю щ и и с я тем, что в качестве прямозонного полупроводника . соединение из группы, содержащей фосфид индия, арсенид индия, айтимонид индия, арсенид галлия и антимонид галлия, а в качестве непрямозонного полупроводника выбрано соедине ние из группы, содержащей фосфид галО ) лия, фосфид алюминия, арсенид алюминия и антимонид алюминия.

Вторично-электронный эмиттер

Вторично-электронный эмиттер

ELEKTRONENEMISSIONSFAEHIGE GAAS- ELEKTRODE

Improvements in or relating to electron discharge devices employing secondary-electron-emission and electrodes for use therein

... 670,583. Electrode materials. ELECTRIC & MUSICAL INDUSTRIES, Ltd. Oct. 26, 1946 [Nov. 7, 1945], No. 9302/48. Divided out of 670,554. Class 39 (i). A mixture of refractory oxides consisting partly but not wholly of alkaline earth oxide is sintered and applied as the coating of a secondary electron emitting electrode. The sintering is carried out by heating the mixture in air at 1200‹ C. for a sufficient period to produce surface fusion or aggregation of the particles. The subject-matter is otherwise as described in Specification 670,554. Specification 670,582 also is referred to.

Improvements in or relating to electron discharge devices employing secondary-electron-emission and electrodes for use therein

... 670,582. Electrode materials. ELECTRIC & MUSICAL INDUSTRIES, Ltd. Oct. 26, 1946 [Nov. 7, 1945], No. 9301/48. Divided out of 670,554. Class 39 (i). A secondary electron emitting electrode comprises a conductive support and a relatively thick coating, i.e. greater than 10-4 inches thick, of an intimate mixture of refractory oxides containing at least 15 per cent of alkaline earth oxide. The alkaline earth oxide, either calcium, strontium or barium oxide, is admixed with magnesium, aluminium or beryllium oxide. The subject-matter is otherwise as described in Specification 670,554. Specifications 601,966, [Group XL (c)], and 670,593 also are referred to.

Improvements in or relating to Image Intensifiers

... 1,168,415. Image converter tubes. MULLARD Ltd. 31 July, 1968, No. 36567/68. Heading H1D. [Also in Division C1] A channel intensifier device has a matrix of glass of the following composition in mol. per cent: SiO 2 -70 to 80; Al 2 O 3 -O to 4; PbO- 7.5 to 18; Na 2 O and/or K 2 O-O to 13; Bi 2 O 3 - 0.5 to 4; and the channel surfaces have a conductive reduced-oxide layer with a resistivity in the range 1010 to 1014 ohms/square. The glass composition may also include up to about 1 % of added material composed of specific agents and/or unwanted impurities. In one example suitable for a small high-definition channel plate having channels about 40Á in diameter or less, the glass comprises SiO 2 , 73.3, Al 2 O 3 1À1, PbO 10.8, Na 2 O 5.9, K 2 O 6À9, Bi 2 O 3 2.0, and the channels are treated by a hydrogen reduction process to give a resistivity p such that log p is about 12.15. In another example for an X-ray image converter with a channel diameter of 100 Á, the SiO 2 is reduced ...

Reducible vitreous materials

... 1,262,730. Cathode materials. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 24 Dec., 1969 [30 Dec., 1968], No. 62799/69. Heading H1D. [Also in Division C1] A dynode is formed of a reducible vitreous material which consists of, in weight per cent (claims of Specification in mole per cent) In an example Mo wire of 20 Á diameter is coated with the glass in a vertical furnace to a thickness of 20 Á. The coated wire is wound on a drum, cut, bundled and heated under pressure to fuse the fibres together and sawn into plates 1À5 mm. thick. The Mo is then dissolved electrolytically in a weak alkaline bath containing NH 3 and NaOCI, using a voltage of 6V reversed every 10 seconds. The glass body obtained is heated in a reducing atmosphere, e.g. in dry H 2 for 2 hours, and the ends coated with metal to form a continuous channel dynode.

Fluidized-bed reactor

... A vertical pipe 18 is located at the side of the reactor 10 opposite the feeder 17 and extends from the bottom of the bed B just above partition 16 to a height within the freeboard F well above the bed. Pipe 18 has a minimum diameter enabling solids therein to remain fluidized, but has a relatively large height-to-diameter ratio to minimize vertical back-mixing of solids therein. A downwardly sloping overflow pipe 21 extends from the intermediate portion of pipe 18 through the side wall of the reactor. The effective height-to-diameter ratio of pipe 18 measured from its lower end to the overflow pipe 21 should be at least 10/1 and preferably in the range 15/1 to 20/1. Preferably the overflow contains a shut off valve 22. Preferably a cone-type plug valve 23 is mounted for vertical movement above the upper end of pipe 18 and is adapted to restrict flow of gas from the pipe. Preferably also an inlet pipe 24, which contains a normally closed valve 25, leads to the lower ...

Glass, which is suitable in particular for application in a dynode

DEVICE FOR ELECTRON EMISSION PROVIDED WITH AN ELECTRON-EMITTING BODY HAVING A LAYER OF A MATERIAL REDUCING THE WORK FUNCTION AND METHOD OF APPLYING SUCH A LAYER OF A MATERIAL REDUCING THE WORK FUNCTION

NEGATIVE EFFECTIVE ELECTRON AFFINITY EMITTERS WITH DRIFT FIELDS USING DEEP ACCEPTOR DOPING

SOLID STATE RADIATION SENSITIVE FIELD ELECTRON EMITTER AND METHODS OF FABRICATION THEREOF

DEVICE SEMICONDUCTOR, TRANSMITTING ELECTRONS, WHOSE ACTIVE LAYER HAS a GRADIENT OF DOPING

ELECTRON TUBE COMPRISING A SOPHISTICATED EMISSIVE ELECTRODE

DETECTOR HAS MULTIPLYING ELECTRONS HIGHLY FORMS Of a LAYER OF NANODIAMANT ADDITIVE.

NON?THERMIONIC ELECTRON EMISSIVE TUBE COMPRISING A CERAMIC HEATER SUBSTRATE

Improvements with the layers with high émissivit? secondary, in particular for the electrodes of bombardment of multipliers of electrons

Cathodes with strong secondary emission of electrons

Surfaces with electron emission

Improvement with the devices with electronic discharge using a secondary electron emission and with the electrodes applicable to those

Layer sensitive to the secondary emission

Improvements with the multipliers of electrons

Improvements brought to the tubes with electronic discharge

DEVICE FOR GENERATING AN ELECTRON CURRENT.

CHANNEL INTENSIFIER GLASS COMPOSITIONS

ELECTRODE WITH A SECONDARY EMISSION LAYER

Cathode with secondary emission

Microelectronic electron emitting device for direct write electron lithography device, has insulating layer with openings forming nano-sources to emit secondary electrons, where number of openings is less than that of micro electron sources

L'invention concerne un dispositif d'émission électronique à plusieurs faisceaux d'électrons comprenant une première structure comportant une pluralité de micro-sources d'émission de faisceau d'électrons, une deuxième structure en regard de la première structure comportant des moyens pour collecter des électrons émis par la première structure et pour réaliser une émission secondaire suite à cette collection. L'invention s'applique notamment au domaine de la lithographie par écriture directe.

LITHIUM?BOROVANADATE GLASS FOR USE IN A SECONDARY ELECTRODE

Sleep for secondary emissions especially for reproducers

나노 다이아몬드층을 가지는 전자 증배기 장치

... 본 발명은 전자 증배기(1)를 전자기 방사선 또는 이온 흐름을 검출하는 시스템에 관한 것이다. 증배기(1)는 입사(incident) 전자들의 흐름을 전달받고 그에 반응하여 2차 전자라고 불리는 전자들의 흐름을 방출시키도록 의도된 액티브 구조물을 적어도 하나 이상 포함하고 있다. 상기 액티브 구조물(2)는 100nm 이하의 평균 크기를 가지는 다이아몬드 입자들로 구성된 얇은 나노 다이아몬드층(4)에 배치된 기판(3)을 포함한다.

Plasma display panel

DETECTOR COMPRISING TRANSMISSION SECONDARY ELECTRON EMMISSION MEANS

The present invention relates to ion detectors of the type used in scientific instrumentation, such as mass spectrometers. More particularly, the present invention provides a self-contained particle detector comprising an enclosure formed in part by a transmission mode secondary electron emissive element, the enclosure defining an internal environment and an external environment, wherein the transmission mode secondary electron emissive element has an externally facing surface and an internally facing surface and is configured such that impact of a particle on the externally facing surface causes emission of one or more secondary electrons from the internally facing surface.

Method of preparation of electron emissive materials

Preferential etches for Gallium Arsenide and Gallium Aluminum Arsenide materials provide a novel single crystalline layer thin film of GaAs for use as a free standing transmission secondary electron emitter or as a photocathode layer on an intermediate epitaxial layer of GaAlAs. Etching of a central area of a substrate layer of GaAs provides an annular rim supporting structure for the epitaxial GaAlAs and GaAs layers. A particular composition of hydrogen peroxide and ammonium hydroxide preferentially etches GaAs while hydrochloric acid preferentially etches GaAlAs.

Аlkаli mеtаl gеnеrаting аgеnt, аlkаli mеtаl gеnеrаtоr, phоtоеlесtriс surfасе, sесоndаrу еlесtrоn еmissiоn surfасе, еlесtrоn tubе, mеthоd fоr mаnufасturing phоtоеlесtriс surfасе, mеthоd fоr mаnufасturing sесоndаrу еlесtrоn еmissiоn surfасе, аnd mеthоd fоr mаnufасturing еlесtrоn tubе

Тhе prеsеnt invеntiоn rеlаtеs tо аn аlkаli mеtаl gеnеrаting аgеnt аnd оthеrs fоr fоrmаtiоn оf а phоtо-саthоdе оr а sесоndаrу-еlесtrоn еmitting surfасе саpаblе оf stаblу gеnеrаting аn аlkаli mеtаl. Тhе аlkаli mеtаl gеnеrаting аgеnt is usеd in fоrmаtiоn оf а phоtо-саthоdе fоr еmitting а phоtоеlесtrоn соrrеspоnding tо inсidеnt light, оr in fоrmаtiоn оf а sесоndаrу-еlесtrоn еmitting surfасе fоr еmitting sесоndаrу еlесtrоns соrrеspоnding tо аn inсidеnt еlесtrоn. Раrtiсulаrlу, thе аlkаli mеtаl gеnеrаting аgеnt соntаins аt lеаst аn охidizеr соmprising аt lеаst оnе vаnаdаtе with аn аlkаli mеtаl iоn аs а соuntеr саtiоn, аnd а rеduсеr fоr rеduсing thе iоn. Аn аlkаli mеtаl gеnеrаting dеviсе соmprisеs аt lеаst thе аlkаli mеtаl gеnеrаting аgеnt аnd а саsе hоusing it, аnd thе саsе is prоvidеd with а disсhаrgе pоrt fоr disсhаrging thе vаpоr оf thе аlkаli mеtаl.

Аlkаli mеtаl gеnеrаting аgеnt, аlkаli mеtаl gеnеrаtоr, phоtоеlесtriс surfасе, sесоndаrу еlесtrоn еmissiоn surfасе, еlесtrоn tubе, mеthоd fоr mаnufасturing phоtоеlесtriс surfасе, mеthоd fоr mаnufасturing sесоndаrу еlесtrоn еmissiоn surfасе, аnd mеthоd fоr mаnufасturing еlесtrоn tubе

Тhе prеsеnt invеntiоn rеlаtеs tо аn аlkаli mеtаl gеnеrаting аgеnt аnd оthеrs fоr fоrmаtiоn оf а phоtо-саthоdе оr а sесоndаrу-еlесtrоn еmitting surfасе саpаblе оf stаblу gеnеrаting аn аlkаli mеtаl. Тhе аlkаli mеtаl gеnеrаting аgеnt is usеd in fоrmаtiоn оf а phоtо-саthоdе fоr еmitting а phоtоеlесtrоn соrrеspоnding tо inсidеnt light, оr in fоrmаtiоn оf а sесоndаrу-еlесtrоn еmitting surfасе fоr еmitting sесоndаrу еlесtrоns соrrеspоnding tо аn inсidеnt еlесtrоn. Раrtiсulаrlу, thе аlkаli mеtаl gеnеrаting аgеnt соntаins аt lеаst аn охidizеr соmprising аt lеаst оnе vаnаdаtе with аn аlkаli mеtаl iоn аs а соuntеr саtiоn, аnd а rеduсеr fоr rеduсing thе iоn. Аn аlkаli mеtаl gеnеrаting dеviсе соmprisеs аt lеаst thе аlkаli mеtаl gеnеrаting аgеnt аnd а саsе hоusing it, аnd thе саsе is prоvidеd with а disсhаrgе pоrt fоr disсhаrging thе vаpоr оf thе аlkаli mеtаl.

Аlkаli mеtаl gеnеrаting аgеnt, аlkаli mеtаl gеnеrаtоr, phоtоеlесtriс surfасе, sесоndаrу еlесtrоn еmissiоn surfасе, еlесtrоn tubе, mеthоd fоr mаnufасturing phоtоеlесtriс surfасе, mеthоd fоr mаnufасturing sесоndаrу еlесtrоn еmissiоn surfасе, аnd mеthоd fоr mаnufасturing еlесtrоn tubе

Тhе prеsеnt invеntiоn rеlаtеs tо аn аlkаli mеtаl gеnеrаting аgеnt аnd оthеrs fоr fоrmаtiоn оf а phоtо-саthоdе оr а sесоndаrу-еlесtrоn еmitting surfасе саpаblе оf stаblу gеnеrаting аn аlkаli mеtаl. Тhе аlkаli mеtаl gеnеrаting аgеnt is usеd in fоrmаtiоn оf а phоtо-саthоdе fоr еmitting а phоtоеlесtrоn соrrеspоnding tо inсidеnt light, оr in fоrmаtiоn оf а sесоndаrу-еlесtrоn еmitting surfасе fоr еmitting sесоndаrу еlесtrоns соrrеspоnding tо аn inсidеnt еlесtrоn. Раrtiсulаrlу, thе аlkаli mеtаl gеnеrаting аgеnt соntаins аt lеаst аn охidizеr соmprising аt lеаst оnе vаnаdаtе with аn аlkаli mеtаl iоn аs а соuntеr саtiоn, аnd а rеduсеr fоr rеduсing thе iоn. Аn аlkаli mеtаl gеnеrаting dеviсе соmprisеs аt lеаst thе аlkаli mеtаl gеnеrаting аgеnt аnd а саsе hоusing it, аnd thе саsе is prоvidеd with а disсhаrgе pоrt fоr disсhаrging thе vаpоr оf thе аlkаli mеtаl.

ELECTRON MULTIPLIER TUBE WITH A NANODIAMOND LAYER

Amorphous electron multiplier

ELECTRON SUPPLYING SOURCE

PURPOSE: To store many electrons with a simple structure to allow the external supply as occasion demands by releasing electrons from a ceramic semiconductor electrode, and redoubling the electrons. CONSTITUTION: A magnetic flux of a magnetic flux density B is supplied to a space between a metal electrode 10 and a ceramic semiconductor electrode 12 toward this side on the page by a magnet 14. A bias power source 16 and an exciting power source 18 are connected in series between the electrodes 10, 12. An electric field E is supplied between the electrodes 10, 12 by the power sources 16, 18. The bias power source 16 causes electrons to make cyclotron motion in the space between the electrodes 10, 12, and the power source 18 gives the electrons dynamic energy. The electrons emitted from the electrode 10 by the power source 18 are accelerated, then returned to the semiconductor 12, collided thereto, and redoubled. Hence, the electrons are emitted from the electrode 12 and stored in the space ...

SECONDARY ELECTRON MULTIPLIER

PURPOSE: To obtain a secondary electron multiplier of a small rate of space occupation which can allow a large flow of secondary electron current, by fixing glass fibers with surface layers which exhibit the secondary electron emitting function and high resistivity by a desired thickness and then attaching metallic conductive layers on both sides. CONSTITUTION: Glass fibers with a diameter of several ten μm and a large content of lead oxide are cut into a desired length, and several hundred fibers are arranged in pallarel on a graphite plate. And then several hundred fibers are arranged in pallarel on the graphite plate again covering the glass fiber array. Furthermore, several hundred glass fibers are arranged so that the fibers intersect with said array at some angle. These arrangements are repeated several ten times and another graphite plate is placed on it. Then a stopper is inserted between both graphite plates and heated to be melt at contact points between each glass fiber. Then ...

ПРЕССОВАННЫЙ МЕТАЛЛОСПЛАВНЫЙ ПАЛЛАДИЙ-БАРИЕВЫЙ КАТОД И СПОСОБ ЕГО ПОЛУЧЕНИЯ

FIELD: electricity. SUBSTANCE: pressed metal-alloy palladium-barium cathode is made of a three-layer of two continuous palladium ribbons and a ribbon placed between them with spaced holes at equal distances forming the cells with powder of intermetallide Pd 5 Ba. The method for producing the noted cathode involves the preparation of a powder of intermetallide Pd 5 Ba by melting the intermetallide Pd 5 Ba, its grinding in an atmosphere of inert gases or CO 2 . A palladium ribbon is covered with the palladium ribbon made with equiparticular holes spaced at equal distances, Pd 5 Ba intermetallide powder is poured into the holes of the palladium ribbon, palladium ribbon, the same as the lower one, with the through holes is placed on top of the palladium ribbon, the resulting three-layer structure is pressed under pressure 10-12 t/cm 2 , after which it is annealed for 1-2 hours in an inert atmosphere at a temperature of 800-900 °C and hot rolling is carried out to a given thickness. EFFECT: increase in the coefficient of secondary electron emission. 2 cl, 2 dwg, 2 tbl, 2 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 647 388 C2 (51) МПК C22C 5/04 (2006.01) B22F 3/16 (2006.01) H01J 1/14 (2006.01) H01J 9/04 (2006.01) H01J 1/32 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК B22F 3/16 (2006.01); H01J 1/14 (2006.01); H01J 9/04 (2006.01); H01J 1/32 (2006.01); C22C 5/04 (2006.01) (21)(22) Заявка: 2016131661, 02.08.2016 (24) Дата начала отсчета срока действия патента: Дата регистрации: 15.03.2018 (43) Дата публикации заявки: 05.02.2018 Бюл. № 4 (45) Опубликовано: 15.03.2018 Бюл. № 8 2 6 4 7 3 8 8 R U (56) Список документов, цитированных в отчете о поиске: ЕСАУЛОВ Н.П. Методы электроплавки при разработке спецсплавов для радиоэлектроники. Электрометаллургия, 2011, N4, с.30-33. RU 2581151 C1, 20.04.2016. RU 2380784 C1, 27.01.2010. RU 132613 U1, 20.09.2013. US 4752713 A1, 21.06.1988. (54) ПРЕССОВАННЫЙ МЕТАЛЛОСПЛАВНЫЙ ПАЛЛАДИЙ ...

ВТОРИЧНО-ЭЛЕКТРОННЫЙ ЭМИТТЕР БЕЗНАКАЛЬНОГО КАТОДА

... 1. Вторично-электронный эмиттер безнакального катода, выполненный в виде кольцевой втулки из прессованного пористого материала на основе эмиссионно-активного палладий-бариевого сплава, отличающийся тем, что указанный материал представляет собой результат спекания при температуре эвтектики стехиометрической смеси нанопорошков Pd и Ba или Pd и PdBa с размером частиц от 10 нм до 200 нм.2. Вторично-электронный эмиттер по п.1, отличающийся тем, что содержание Ba в эмиттере соответствует эвтектике сплава PdBa и составляет 11-13% от массы в исходной смеси нанопорошков, входящих в состав исходной шихты для изготовления эмиттера.

ВТОРИЧНОЭМИССИОННЫЙ КАТОД

Полезная модель относится к электронной технике и может быть использована для изготовления приборов М-типа. Вторично-эмиссионный катод содержит наружный слой из вторичноэмиссионного материала, закрепленный на керне катода, на внешней поверхности наружного слоя выполнены канавки в количестве не менее пяти, глубиной 0,2-0,3 мм, с шагом 3-5 мм и радиусом закругления наружных кромок 0,1-0,3 мкм. Канавки в виде колец шириной 1-2 мм имеют прямоугольное сечение. Канавки в виде колец шириной 3-5 мм имеют конусообразное сечение. Канавки прямоугольного сечения шириной 1-2 мм выполнены в виде спирали. 3 з.п. ф-лы, 3 фиг.

ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE

An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure. 1. An electron multiplying structure in a vacuum tube using electron multiplying , the electron multiplying structure comprising:an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube,an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube,wherein the electron multiplying structure at least is composed of a semi-conductor material layer, wherein the semi-conductor material layer is adjacent to the detection surface of the vacuum tube.2. The electron multiplying structure of claim 1 , wherein the semi-conductor material layer has a band gap of at least 2 eV.3. The electron multiplying structure of claim 1 , wherein the semi-conductor material layer comprises at least one compound taken from the group III-V or group II-VI of the periodic table of the chemical elements.4. The electron multiplying structure of claim 1 , wherein the semi-conductor material layer comprises any one of the group consisting of a diamond-like material layer claim 1 , a mono monocrystalline diamond film claim 1 , a polycrystalline diamond film and a nanocrystalline diamond film.5. The electron multiplying structure of claim 4 , wherein the diamond-like material layer is applied as a coating of nano particle diamond claim 4 , diamond like carbon or graphene.6. The electron multiplying structure of claim 1 , wherein the electron ...

MICROCHANNEL PLATE FOR ELECTRON MULTIPLIER

A microchannel plate () for a microchannel plate electron multiplier, comprising: a substrate () forming a plate having first and second opposing faces and having a plurality of parallel channels therethrough from first to second faces and; a first electrode () on the first face, the first electrode () having a first side adjacent to the substrate and a second side opposite to the first side; a second electrode () on the second face, the second electrode () having a first side adjacent to the substrate () and a second side opposite to the first side; and a layer () of resistive and secondary emissive material on the second side of the first electrode and the second electrode. 1. A microchannel plate for a microchannel plate electron multiplier , comprising:a substrate forming a plate having first and second opposing faces and having a plurality of parallel channels therethrough from first to second faces and;a first electrode on the first face, the first electrode having a first side adjacent to the substrate and a second side opposite to the first side;a second electrode on the second face, the second electrode having a first side adjacent to the substrate and a second side opposite to the first side;and a layer of resistive and secondary emissive material on the second side of the first electrode and the second electrode.2. The microchannel plate of claim 1 , in which the resistive and secondary emissive material comprises at least one of magnesium oxide (MgO) and aluminium oxide (AlO)3. The microchannel plate of claim 2 , in which the resistive and secondary emissive material comprises a dopant present to control the resistance of the material.4. The microchannel plate of claim 3 , in which the dopant is Zinc Oxide (ZnO).5. The microchannel plate of claim 1 , in which each layer is less than 100 nanometres thick.6. The microchannel plate of claim 6 , in which each layer is between 10 and 100 nanometres thick.7. The microchannel plate of claim 1 , in which each ...

Vacuum Encapsulated, High Temperature Diamond Amplified Cathode Capsule and Method for Making Same

A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first high-temperature solder weld disposed between the diamond window element and the annular insulating spacer and a second high-temperature solder weld disposed between the annular insulating spacer and the cathode element. The cathode capsule is formed by a high temperature weld process under vacuum such that the first solder weld forms a hermetical seal between the diamond window element and the annular insulating spacer and the second solder weld forms a hermetical seal between the annular spacer and the cathode element whereby a vacuum encapsulated chamber is formed within the capsule. 1. A diamond amplified cathode capsule for generating an electron beam of secondary electrons , the capsule comprising:a cathode element having a primary emission surface adapted to emit primary electrons;an annular insulating spacer;a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element;a first high temperature solder weld disposed between said diamond window element and said annular insulating spacer; anda second high temperature solder weld disposed between said annular insulating spacer and said cathode element,wherein said cathode capsule is formed by a high temperature weld process such that said first solder weld forms a hermetical seal between said diamond window element and said annular insulating spacer and said second solder weld forms a hermetical seal between said ...

Electron multiplier production method and electron multiplier

An electron multiplier production method including a main body portion, and a channel provided in the main body portion to open at one end surface and the other end surface of the main body portion and emits secondary electrons includes a first step of preparing a main body member including the one end surface and the other end surface, a communicating hole for the channel through which the one end surface and the other end surface communicate being provided in the main body member, a second step of forming the channel by forming a deposition layer including at least a resistive layer on an outer surface of the main body member and an inner surface of the communicating hole using an atomic layer deposition method, and a third step of forming the main body portion by removing the deposition layer formed on the outer surface of the main body member.

ENHANCED ELECTRON AMPLIFIER STRUCTURE AND METHOD OF FABRICATING THE ENHANCED ELECTRON AMPLIFIER STRUCTURE

An enhanced electron amplifier structure includes a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface, an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide, a resistive coating layer formed on the first ion diffusion layer, an emissive coating layer formed on the resistive coating layer, and an optional ion feedback layer formed on the front surface of the structure. The emissive coating produces a secondary electron emission responsive to an interaction with a particle received by the channel. The ion diffusion layer, the resistive coating layer, the emissive coating layer, and the ion feedback layer are independently deposited via chemical vapor deposition or atomic layer deposition. 1. An enhanced electron amplifier structure comprises:a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface;an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide;a resistive coating layer formed on the ion diffusion layer;an emissive coating layer formed on the resistive coating layer, the emissive coating configured to produce a secondary electron emission responsive to an interaction with a particle received by the channel,wherein the ion diffusion layer, the resistive coating layer, and the emissive coating layer are independently deposited via chemical vapor deposition or atomic layer deposition.2. The enhanced electron amplifier structure of claim 1 , wherein the metal oxide of the ion diffusion layer comprises MgO claim 1 , AlO claim 1 , HfO claim 1 , TiO claim 1 , GdOor ZrO.3. The enhanced electron amplifier structure of claim 1 , further comprising ...

METHOD OF ENHANCING A DLC COATED SURFACE FOR ENHANCED MULTIPACTION RESISTANCE

A method for creating an enhanced multipaction resistant diamond-like coating (DLC) coating with lower Secondary Electron Emission (SEE) properties is performed on an initial surface by etching a DLC coating deposited on the surface after deposition and optionally creating interlayers to enhance adhesion mechanical properties between the DLC coating and the initial surface. 1. A method of creating an enhanced DLC coating on multipaction prone surfaces comprising:(a) preparing a surface to be coated;(b) coating said surface with a DLC coating layer; and(c) etching with said DLC coating layer with an inert gas.2. The method of wherein the step of coating the surface with a DLC coating also includes other gases.3. The method of wherein the step of coating the surface with a DLC other gases one of claim 1 , or a combination of nitrogen and fluorine.4. The method of wherein the step of coating the surface with a DLC includes said other gases that become dopants within the DLC coating.5. A method of creating an enhanced DLC coating on multipaction prone surfaces comprising:(a) preparing a surface to be coated;(b) etching said surface with an inert gas;(c) coating said etched surface with one or more interlayers with adhesive properties, said top interlayer having a top surface;(d) coating said top interlayer surface with adhesive properties with a DLC coating layer; and(e) etching with said DLC coating layer with an inert gas.6. A method according to wherein said step (a) preparing a surface is ultrasonic cleaning.7. A method according to wherein said step (a) preparing a surface is plasma etching.8. A method according to wherein said step (a) preparing a surface is by ultrasonic cleaning and plasma etching.9. A method according to wherein said inert gas of each of step (b) and step (e) has one or more noble gases.10. A method according to wherein each of said interlayers is one of silicon claim 5 , carbide claim 5 , and metal nitride.11. A method according to wherein ...

DISCRETE DYNODE ELECTRON MULTIPLIER FABRICATION METHOD

A process of fabricating a discrete-dynode electron multiplier (DDEM) including the steps of mounting an insulator block to a conductor block, and forming a series of ion-optics geometrical structures in the conductor block, each ion-optics geometrical structure having a smallest dimension of less than 1 millimeter. The forming step may be performed by electrical discharge machining (EDM), laser cutting, and/or water jet cutting. 1. A process of manufacturing a discrete-dynode electron multiplier (DDEM) comprising the steps of:mounting an insulator block to a monolithic conductor block; andforming a series of ion-optics geometrical structures in the monolithic conductor block, each ion-optics geometrical structure having a smallest dimension of less than 1 millimeter.2. The process of claim 1 , wherein the forming step is performed by electrical discharge machining (EDM) claim 1 , laser cutting claim 1 , and/or water jet cutting.3. The process of claim 1 , wherein the series of ion-optics geometrical structures comprise a series of alternating fingers and slots in the monolithic conductor block.4. The process of claim 3 , wherein one of the fingers and/or slots is curved in a direction along the smallest dimension.5. The process of claim 1 , wherein the mounting step comprises either bonding or brazing the conductor block to the insulator block.6. The process of claim 1 , wherein the step of forming further comprises the step of forming an opening in the conductor block.7. The process of further comprising mounting a circuit board to the DDEM by positioning a fastener through the opening in the conductor block and through an opening in the circuit board.8. The process of claim 1 , wherein the forming step comprises forming two separate conductors from the monolithic conductor block.9. The process of claim 1 , wherein the mounting step further comprises mounting the insulator block to one side of the conductor block and mounting a second insulator block to an ...

ELECTRONIC AMPLIFYING SUBSTRATE AND METHOD OF MANUFACTURING ELECTRONIC AMPLIFYING SUBSTRATE

An electronic amplifying substrate, including: a glass base material having an insulating property; conductive layers formed on both main surfaces of the glass base material; and a plurality of through holes formed on a lamination body of the glass base material and the conductive layer, wherein an electric field is formed in the through hole by a potential difference between both conductive layers during application of a voltage to a surface of the conductive layer so that an electron avalanche amplification occurs in the through hole, and an insulation part is formed on at least one main surface of the glass base material, with one of the end portions of the insulation part formed to surround an opening part of the through hole of the glass base material, and the other end portion formed in contact with the end portions of the conductive layers. 2. The electronic amplifying substrate according to claim 1 , wherein the end portion of the conductive layer on at least one main surface of the glass base material claim 1 , is formed so as to retreat from the opening part of the through hole of the glass base material.3. The electronic amplifying substrate according to claim 2 , which is disposed between a drift electrode and a read electrode constituting a detector claim 2 ,wherein the end portion of the conductive layer formed on a main surface opposed to the read electrode, is retreated from the opening part of the through hole of the glass base material.4. The electronic amplifying substrate according to claim 2 , which is disposed between the drift electrode and the read electrode constituting the detector claim 2 ,wherein in a cross-sectional surface of the electronic amplifying substrate, the end portions of the conductive layer formed on both of the main surfaces are retreated from the opening part of the through hole of the glass base material.5. The electronic amplifying substrate according to claim 1 , wherein a corner portion of the through hole formed on ...

Patent FR2315763B1

Method of producing pressed metal-alloy palladium-barium cathode

FIELD: metallurgy. SUBSTANCE: intermetallide Pd5Ba is produced by melting, is ground in an atmosphere of inert gas or CO 2 to obtain a powder, the resulting powder is mixed with palladium powder and mechanically activated by the planetary or vibrator mill for 5-15 minutes. The powder obtained after mechanoactivation is compressed, and the compact is sintered in an argon atmosphere in a beam of fast electrons at a temperature of (700-800)°C for 25-40 minutes. EFFECT: increasing the coefficient of secondary electron emission of the pressed metal-alloy cathodes Pd-Ba. 2 tbl, 2 ex РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 627 707 C1 (51) МПК C22C 5/04 (2006.01) C22C 1/04 (2006.01) B22F 3/16 (2006.01) H01J 1/14 (2006.01) H01J 9/04 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2016131657, 02.08.2016 (24) Дата начала отсчета срока действия патента: 02.08.2016 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 02.08.2016 (45) Опубликовано: 10.08.2017 Бюл. № 22 (73) Патентообладатель(и): Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") (RU) (56) Список документов, цитированных в отчете о поиске: ЕСАУЛОВ Н.П. Методы C 1 2 6 2 7 7 0 7 R U (54) СПОСОБ ПОЛУЧЕНИЯ ПРЕССОВАННОГО МЕТАЛЛОСПЛАВНОГО ПАЛЛАДИЙ-БАРИЕВОГО КАТОДА (57) Реферат: Изобретение относится к электронной технике планетарной или вибромельнице в течение 5-15 и может быть использовано для изготовления минут. Полученный после механоактивации эффективных термо- и вторично-эмиссионных порошок прессуют, а прессовку спекают в катодов. Путем плавки получают интерметаллид атмосфере аргона в пучке быстрых электронов Рd5Ва, размалывают в атмосфере инертного газа при температуре (700-800)°С в течение 25-40 минут. Обеспечивается повышение на (15-17)% или СО2 с получением порошка, полученный коэффициента вторичной электронной эмиссии порошок смешивают с порошком палладия и прессованных ...

Patent AU6171569A

Secondary electron emission surface

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for making field emission device

A method for making a field emission device includes the following steps. An insulative substrate is provided. An electron pulling electrode is formed on the insulative substrate. A secondary electron emission layer is formed on the electron pulling electrode. A first dielectric layer is fabricated. The first dielectric layer has a second opening to expose the secondary electron emission layer. A cathode plate having an electron output portion is provided. An electron emission layer is formed on part surface of the cathode plate. The cathode plate is placed on the first dielectric layer. The electron output portion and the second opening have at least one part overlapped, and at least one part of the electron emission layer is oriented to the secondary electron emission layer via the second opening.

METHOD FOR MANUFACTURING A DYNODE AND DYNODE MANUFACTURED ACCORDING TO THIS METHOD

Le procédé consiste à déposer sur un substrat 2, éventuellement poli, une première couche d'Au sous une épaisseur d'environ 200 nm ou plus par pulvérisation cathodique, puis une seconde couche de Mg0 sous une épaisseur de 2 à 10 nm également par pulvérisation cathodique, le substrat étant constamment maintenu sous atmosphère contrôlée pendant les deux dépôts, ainsi qu'entre ceux-ci.

Large area micro channel secondary emission electrode - divided by thin partitions into active parts

Chemical attack is carried out in two stages. In the first stage the face of the device is masked by bands of a given width. In the second stage the bands are made narrower, whilst the hollows appearing from the first stage are partially filled with a product which is not affected by the chemical attack, the filling being such that at a level superior to it, primitive divisions, resulting from the first stage of chemical attack, have a width sensibly equal to that of the masking bands used during the second stage. Chemical attack can also include successive stages analogous to the second stage. The electrode presents in the direction of secondary emission, a non uniform thickness and has hollowed out parts which are the active parts of the electrode, and has non active equal thickness divisions which enclose the active parts. A number of the divisions have slots. The active parts and the slots are covered by an electrically conducting layer.

ELECTRON MULTIPLIER DEVICE WITH NANODIAMANT LAYER.

L'invention porte sur un multiplicateur (1) d'électrons pour système de détection d'un rayonnement électromagnétique ou d'un flux ionique. Le multiplicateur (1) comporte au moins une structure active (2) destinée à recevoir un flux d'électrons incidents et à émettre en réponse un flux d'électrons dits secondaires. Ladite structure active (2) comporte un substrat (3) sur lequel est disposée une couche mince de nanodiamant (4) formée de particules de diamant dont la taille moyenne est inférieure ou égale à 100nm An electron multiplier (1) for a system for detecting electromagnetic radiation or ion flux is disclosed. The multiplier (1) comprises at least one active structure (2) intended to receive a stream of incident electrons and to emit in response a flow of so-called secondary electrons. Said active structure (2) comprises a substrate (3) on which is disposed a nanodiamond thin layer (4) formed of diamond particles whose average size is less than or equal to 100 nm

Electron multiplier with nanodiamond layer

FIELD: electricity. SUBSTANCE: invention relates to an electron multiplier (1) for system for detecting electromagnetic radiation or ion flow. Multiplier (1) comprises at least one active structure (2) for receiving a flow of incident electrons and emitting electrons in response to flow of electrons, referred to as secondary. Said active structure (2) comprises substrate (3) on which there is thin nanodiamond layer (4) composed of diamond particles having an average size less than or equal to 100 nm. EFFECT: high gain. 14 cl, 5 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК H01J 43/18 (11) (13) 2 584 693 C2 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013117006/07, 09.09.2011 (24) Дата начала отсчета срока действия патента: 09.09.2011 Приоритет(ы): (30) Конвенционный приоритет: (72) Автор(ы): НЮТЦЕЛЬ Герт (NL), ЛАВУТ Паскаль (FR), ДЖЕКМЭН Ричард Б. (GB) 13.09.2010 FR 1057276 (43) Дата публикации заявки: 20.10.2014 Бюл. № 29 R U (73) Патентообладатель(и): ФОТОНИС ФРАНС (FR) (45) Опубликовано: 20.05.2016 Бюл. № 14 (85) Дата начала рассмотрения заявки PCT на национальной фазе: 15.04.2013 (86) Заявка PCT: 2 5 8 4 6 9 3 (56) Список документов, цитированных в отчете о поиске: US 2009212680A1, 27.08.2009. US 2008073127A1, 27.03.2008. US 2009315443A1, 24.12.2009. 2 5 8 4 6 9 3 R U (87) Публикация заявки PCT: WO 2012/034948 (22.03.2012) Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, строение 3, ООО "Юридическая фирма Городисский и Партнеры" (54) ЭЛЕКТРОННЫЙ УМНОЖИТЕЛЬ С НАНОАЛМАЗНЫМ СЛОЕМ (57) Реферат: Изобретение относится к электронному называемых вторичными. Указанная активная умножителю (1) для системы обнаружения структура (2) содержит подложку (3), на которой электромагнитного излучения или потока ионов. находится тонкий наноалмазный слой (4), Умножитель (1) содержит по меньшей мере одну состоящий из алмазных частиц, средний размер активную структуру (2), предназначенную для которых меньше ...

High gain electron multiplier of semiconduc- - ting barium titanate

The multiplier consists of at least one tube of ceramic barium titanate doped with a rare earth metal and possibly also a 5-valent metal. Conductive electrodes are placed at each end of the tube to which a DC voltage is applied. Electrons are accelerated into one end of the tube and pass through it having multiple collisions with the walls. Large numbers of secondary electrons are generated and gathered by a collector close to the anode end of the tube. Gains of 107 to 108 times more than classical multipliers are obtained and the multipliers are mechanically robust, resistant to particle bombardment and chemical attack and cheaply and easily fabricated.

Patent FR2466851B1

MICRO-CHANNELS REALIZATION INSTALLATION IN A SEMICONDUCTOR BODY, IN PARTICULAR ELECTRON MULTIPLIER MICRO-CHANNELS

Method of enhancing a DLC coated surface for enhanced multipaction resistance

A method for creating an enhanced multipaction resistant diamond-like coating (DLC) coating with lower Secondary Electron Emission (SEE) properties is performed on an initial surface by etching a DLC coating deposited on the surface after deposition and optionally creating interlayers to enhance adhesion mechanical properties between the DLC coating and the initial surface.

Diamond transmission dynode and photomultiplier or imaging device using same

A diamond transmission dynode and photocathode are described which include a thin layer of a crystalline semiconductive material. The semiconductive material is preferably textured with a (100) orientation. Metallic electrodes are formed on the input and output surfaces of the semiconductive material so that a bias potential can be applied to enhance electron transport through the semiconductive material. An imaging device and a photomultiplier utilizing the aforesaid transmission dynode and/or photocathode are also described.

SEMICONDUCTOR DEVICE, ELECTRON TRANSMITTER, WITH ACTIVE LAYER HAVING A DOPING GRADIENT

L'INVENTION CONCERNE UN DISPOSITIF SEMI-CONDUCTEUR CAPABLE D'EMETTRE DES ELECTRONS DANS LE VIDE PAR UNE DE SES SURFACES, REMARQUABLE EN CE QU'IL COMPORTE UNE COUCHE SEMI-CONDUCTRICE DITE ACTIVE 3, AFFLEURANT LA SURFACE EMETTRICE DONT LE DOPAGE CROIT LORSQUE LA DISTANCE A LADITE SURFACE EMETTRICE DIMINUE. APPLICATION: PHOTOCATHODES, DYNODES. THE INVENTION CONCERNS A SEMICONDUCTOR DEVICE CAPABLE OF EMITTING ELECTRONS IN VACUUM BY ONE OF ITS SURFACES, REMARKABLE IN THAT IT INCLUDES A SEMI-CONDUCTIVE LAYER CALLED ACTIVE 3, FLUSHING THE EMITTING SURFACE WHICH THE DOPING GROWS WHEN THE DISTANCE TO THE SAID TRANSMITTING SURFACE DECREASES. APPLICATION: PHOTOCATHODES, DYNODES.

Manufacturing photo-multiplier tube

Photomultiplier dynode coating materials and process

The photosensitivity of a photomultiplier dynode to white light or infrared radiation is greatly reduced by coating the dynode with a layer of an alkali halide material having good secondary electron emission characteristics. A method of applying the coating to the dynode is also described.

Light source apparatus and backlight module

배면광 모듈에 적용될 수 있는 광원 장치는 캐소드 구조체, 애노드 구조체, 형광층, 제 2 전자 발생층 및 저압 개스층을 포함한다. 형광층은 캐소드 구조체와 애노드 구조체 사이에 위치된다. 저압 개스층은 캐소드 구조체와 애노드 구조체 사이에 충전된다. 제 2 전자 발생층은 캐소드 구조체상에 배치되고 발광 효율을 향상시키기 위하여 형광층을 가격하는 부가적인 제 2 전자들을 발생시킬 수 있다. The light source device that can be applied to the backlight module includes a cathode structure, an anode structure, a fluorescent layer, a second electron generating layer, and a low pressure gas layer. The fluorescent layer is located between the cathode structure and the anode structure. The low pressure gas layer is filled between the cathode structure and the anode structure. The second electron generating layer may be disposed on the cathode structure and generate additional second electrons that strike the fluorescent layer to improve luminous efficiency. 배면광, 광원, 평면 광원 Back light, light source, planar light source

Secondary-emission electrode, particularly for a photomultiplier

Electrode comprising a metal base (1) and a layer (3) with high secondary emission coefficient, made from an alkaline compound of antimony, notable in that it also comprises an intermediate layer (2) acting as a barrier layer, made from a material selected from the group formed by rhodium, ruthenium, molybdenum, iridium, rhenium, tungsten and palladium. These various layers are preferably deposited electrolytically. These secondary emission electrodes find application in photomultiplier tubes. Application: scintillation measurement, spectrophotometry. <IMAGE>

Electron emitting electrode

Plasma display panel and drive method thereof

A plasma display panel and a drive method therefor, which can enhance a representation capability when displaying a dark image. The plasma display panel includes fluorophor layers (17) which are respectively disposed at positions confronting the discharge cells, wherein a discharge gas is enclosed in the discharge space, and magnesium oxide (17B) is contained in the fluorophor layers. A drive method of a plasma display panel pixel cells that contain fluorophor materials and a secondary electron emission material, includes a reset step in which all the pixel cells are caused to perform reset discharges, thereby to initialize the individual pixel cells into states of one of a light-up mode and a light-off mode, and an address step in which the pixel cells are caused to perform address discharges selectively in accordance with pixel data, thereby to shift the individual pixel cells into states of the other of the light-up mode and the light-off mode, are successively executed in each of a head subfield and a second subfield within a one-field display period. In each reset step, a voltage with row electrodes on one side, in the row electrode pairs set as an anode side and the column electrodes set as a cathode side is applied between the row electrodes on one side and the column electrodes, whereby the reset discharges are induced between both the electrodes. In another aspect, in a head subfield within a one-field display period, a voltage with row electrodes on one side, in the row electrode pairs set as an anode side and the column electrodes set as a cathode side is applied between the row electrodes on one side and the column electrodes, whereby reset discharges for initializing all the pixel cells into a light-off mode are induced between the column electrodes and the row electrodes within all the pixel cells.

Secondary electron multiplier with glow cathode

Fluidized bed reaction apparatus

Improvements in the manufacturing process of secondary emission dynodes and said dynodes

Patent FR2026188A1

ELECTRON MULTIPLIER DEVICE WITH NANODIAMANT LAYER.

secondary electron emitter

Tv camera tube dynode

Dynode for T.V. camera tubes with a re-entrant electron beam, in which Pd is sprayed on to a polished sheet of glass and is coated with a layer of Cu of >=20 mu thickness. These are then peeled from the glass as a sheet and a portion of the sheet is placed and fixed on a support with a central opening. The surface of the dynode is sanded with fine sand and vapour deposited with Cr. Sanding may be effected with aluminium oxide particles of 20 mu particle size.

DEVICE FOR ELECTRON EMISSION HAVING AN ELECTRON EMITTING BODY HAVING A LAYER OF OUTPUT POTENTIAL REDUCING MATERIAL AND METHOD FOR APPLYING SUCH LAYER INTO OUTPUT POTENTIAL REDUCING MATERIAL

UNE SURFACE EMETTEUR D'ELECTRONS EST MUNIE D'UN MATERIAU REDUCTEUR DE POTENTIEL DE SORTIE DES ELECTRONS, CE DERNIER ETANT OBTENU PAR UNE REACTION APPROPRIEE. LE MELANGE REACTIONNEL OU LE PRODUIT A DECOMPOSER, PAR EXEMPLE CSN 21 SE TROUVE DANS UN RESERVOIR FORME PAR UN CORPS SEMI-CONDUCTEUR 20, MUNI AU BESOIN D'UN ENFONCEMENT 33, ALORS QU'AU MOINS UNE JONCTION PN 23 FAIT OFFICE DE DIODE DE CHAUFFAGE. LORS DU CHAUFFAGE, LE MATERIAU REQUIS (PAR EXEMPLE CS) SE DEGAGE ET SE DEPOSE SUR UNE SURFACE EMETTRICE D'ELECTRONS. AN ELECTRON EMITTING SURFACE SHALL BE EQUIPPED WITH AN ELECTRON OUTPUT POTENTIAL REDUCING MATERIAL, THE LATTER BEING OBTAINED BY AN APPROPRIATE REACTION. THE REACTIONAL MIXTURE OR THE PRODUCT TO BE DECOMPOSED, FOR EXAMPLE CSN 21 IS LOCATED IN A TANK SHAPED BY A SEMICONDUCTOR BODY 20, EQUIPPED AS A PRESSURE 33, WHILE AT LEAST ONE PN 23 JUNCTION ACTS AS A DIODE OF HEATER. WHEN HEATING, THE REQUIRED MATERIAL (FOR EXAMPLE CS) IS RELEASED AND IS DEPOSITED ON AN ELECTRON EMITTING SURFACE.

Patent GB1297127A

1297127 Cathode ray display tubes; electron multipliers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 11 Dec 1969 [14 Dec 1968] 60553/69 Heading H1D An electron source has a planar uniformly emissive surface the source having a channel plate, electron emitter device on the input face, and supply means for driving the plate in the saturation mode. A second channel plate (29) (Fig. 2, not shown) may be on the output side having channels of length l and diameter d such that l/d is at least equal to sin α/sin # sin (α + #), where α is the angle between the axis of the first plate and the second plate input surface, # is the angle between this surface and the axis of the second plate and α + # < 180 degrees. Saturation operation compensates non uniform emission at the emitting layer, the number of outgoing electrons no longer being a function of the number of electrons emitted and depending on plate resistance, and length/diameter ratio of the passages (e.g. 50). The electron emitting device may be a flat thermionic cathode a short distance from the plate or integral therewith, or may be a field emission device, the plate electrode also serving for field emission or a photocathode. The emitting material may be applied to the input electrode and advantageously a small quantity may enter a small distance into the channels. The electron kinetic energy varies as the last collision distance from the output face which determines the K.E. spread, the spread being smaller the more saturated, or with second plate 29 whose passage diameters need not equal those of plate 27, may have a common electrode with that plate, and operates at as low a voltage as possible compatible with multiplier operation; the plates being inclined to ensure at least one collision in plate 29. Alternatively a magnetic field may be provided, preferably at right angles to the single plate or may be used with the two plate system, e.g. 2 mm. long permanent magnets (34), (35) ensure at least one ...

X-ray generation using secondary emission electron source

A method and apparatus are provided for generating high frequency electromagnetic energy using a secondary emission electron source. An x-ray source is therefore provided having a primary electron emitter, a secondary emission member, and an anode. The primary electron emitter provides a primary electron current directed to the secondary emission member. The secondary emission member then generates a secondary electron current which causes x-ray generation when impinging upon the anode.

Electron multipliers and radiation detectors

An electron multiplier includes a plate having a plurality of interconnected particles, e.g., fibers, having electron-emissive surfaces. The particles may include a neutron-sensitive and/or neutron reactive material, such as 6 Li, 10 B, 155 Gd, 157 Gd,—and/or hydrogenous compounds, in excess of their natural abundance. The particles may include an X-ray sensitive and/or X-ray reactive material, such as Pb.

Secondary-electron emission

Transmission type secondary electron surface and electron tube

(57)【要約】 【課題】 高い２次電子生成効率をもって２次電子増倍 を行うと共に位置検出の可能な透過型光電面及び電子管 を提供することを目的とする。 【解決手段】 本発明の電子管では、気密容器１２内 に、光電子放出面からなる陰極１８と、陰極１８に対し て正の電圧が保持された陽極２０と、陰極１８と陽極２ ０との間に配置され、陰極２０からの電子を効率よく２ 次電子増倍する透過型２次電子面３０とが備えられ、透 過型２次電子面３０は多結晶ダイヤモンド薄膜３２と、 薄膜の剛性を補うための補強枠３４とを有し、陽極２０ は透過型２次電子面３０により陰極１８から放出される ２次元電子に対応して増倍された増倍２次元電子が入射 することにより発光する蛍光体２２を有している。この 構成では、陰極１８からの２次元電子の位置に対応した 位置の陽極２０に増倍２次元電子電子が入射するので、 陰極１８からの２次元電子を画像化することができる。

Metal-encapsulated photocathode electron emitter

Electron emission device provided with a reservoir containing material reducing the electron work function

Restriction of free electrons in multiplier semiconductor structure

Field emission cathode device and field emission display

本发明涉及一种场发射阴极装置，所述场发射阴极装置包括：一绝缘基板，该绝缘基板具有一表面；一第一电极与一第二电极相互间隔地设置于所述绝缘基板的所述表面；一阴极发射体，该阴极发射体与所述第一电极电连接；所述场发射阴极装置进一步包括一次级电子发射材料，所述次级电子发射材料至少部分设置于所述第一电极和第二电极之间，且所述阴极发射体与所述次级电子发射材料相对且间隔设置。本发明还涉及采用上述场发射阴极装置的场发射显示器。

Electron emitter and method of fabricating electron emitter

An electron emitter includes an emitter layer formed of a dielectric material, an upper electrode, and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode, for emitting electrons. The upper electrode is formed of scale-like conductive particles on the upper surface of the emitter layer and has a plurality of opening portions. The surfaces of overhanging portions of the opening portions that face the emitter layer are apart from the emitter layer. The overhanging portions each have such a cross-sectional shape as to be acutely pointed toward the inner edge of the opening portion, or the tip end of the overhanging portion, so that lines of electric force concentrate at the inner edge.

Electron emitting device and light emitting device

Electron multiplying structure for use in vacuum tube using electron multiplying as well as vacuum tube using electron multiplying provided with such electron multiplying structure

FIELD: physics. SUBSTANCE: invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying and to a vacuum tube using electron multiplying provided with such an electron multiplying structure. An electron multiplying structure is proposed for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input surface to be directed towards the entrance window of the vacuum tube, an output surface to be directed towards the detection surface of the vacuum tube, where the electron multiplying structure is at least composed of a semiconductor material layer adjacent to the detection windows. EFFECT: high secondary emission efficiency and simpler device. 20 cl, 6 dwg

Electron multipliers

Discharge vessel

Metal encapsulated photocathode electron emitter

本发明揭示一种光电阴极结构，其可包含Cs2Te、CsKTe、CsI、CsBr、GaAs、GaN、InSb、CsKSb或金属中的一或多者，所述光电阴极结构在外表面上具有保护膜。所述保护膜包含钌、镍、铂、铬、铜、金、银、铝中的一或多者或其合金。所述保护膜可具有从1nm到10nm的厚度。所述光电阴极结构可用于如扫描电子显微镜的电子束工具中。

Electron multiplier electron source and ionization source using it

An electron multiplier with a source for spontaneously generating electrons is used as an electron source for an ionization source in a mass spectrometer or the like. The electron multiplier can be a microchannel plate, in which case it produces a wide electron beam. The microchannel plate can be acid-leached to provide a surface for spontaneous generation of electrons, or the first strike surface can be coated with an alkali-containing material. The electron source can be tuned by providing an electrode for rejecting electrons having too high an energy and a grid for rejecting electrons having too low an energy.

Improvement in secondary electron emission electrode

An electrode for an electron multiplier consists of an alloy of 99 per cent of nickel and 1 per cent of barium.

Field emission cathode device and field emission display device using the same

Plasma display panel and drive method therefor

A plasma display panel and a drive method therefor, which can enhance a representation capability when displaying a dark image. The plasma display panel includes fluorophor layers containing magnesium oxide. The drive method includes a reset step to initialize all the pixel cells into states of one of a light-up mode and a light-off mode, and an address step in which the pixel cells are caused to perform address discharges selectively in accordance with pixel data, which are successively executed in each of a head subfield and a second subfield within a one-field display period. In reset step, a voltage that sets row electrodes on one side, in the row electrode pairs as an anode and sets the column electrodes set as a cathode is applied between the row electrodes on the one side and the column electrodes.

Plasma display panel and drive method therefor

A plasma display panel and a drive method therefor, which can enhance a representation capability when displaying a dark image. The plasma display panel includes fluorophor layers (17) which are respectively disposed at positions confronting the discharge cells, wherein a discharge gas is enclosed in the discharge space, and magnesium oxide (17B) is contained in the fluorophor layers. A drive method of a plasma display panel pixel cells that contain fluorophor materials and a secondary electron emission material, includes a reset step in which all the pixel cells are caused to perform reset discharges, thereby to initialize the individual pixel cells into states of one of a light-up mode and a light-off mode, and an address step in which the pixel cells are caused to perform address discharges selectively in accordance with pixel data, thereby to shift the individual pixel cells into states of the other of the light-up mode and the light-off mode, are successively executed in each of a head subfield and a second subfield within a one-field display period. In each reset step, a voltage with row electrodes on one side, in the row electrode pairs set as an anode side and the column electrodes set as a cathode side is applied between the row electrodes on one side and the column electrodes, whereby the reset discharges are induced between both the electrodes. In another aspect, in a head subfield within a one-field display period, a voltage with row electrodes on one side, in the row electrode pairs set as an anode side and the column electrodes set as a cathode side is applied between the row electrodes on one side and the column electrodes, whereby reset discharges for initializing all the pixel cells into a light-off mode are induced between the column electrodes and the row electrodes within all the pixel cells.

Insulating nitride compounds as electron emitters

A high emission of electrons, as a result of negative electron affinity, has been achieved from an insulating nitride coated with a film of an electropositive work function reducing material.

Glass compositions for use as secondary electron multipliers

1424955 Semi-conducting glass HOYA GLASS WORKS Ltd 5 March 1974 [5 March 1973] 9945/74 Heading C1M [Also in Division H1] A semi-conducting glass (suitable for producing a secondary electron multiplying tube) consists of (mole per cent) The glass may be used in tube or fibre form in a channel electron multiplier. The glass may be prepared by mixing the constituents, melting them in air in a clay, silica or alumina crucible at 1200-1360‹ C. for 9-10 hours, cooling to the transformation temperature and annealing.

Electron emitter

A dielectric-film-type electron emitter includes an emitter section (12), a first electrode (14), and a second electrode (16). The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Channel secondary electron multiplier

Es wird ein Kanal-Sekundärelektronenvervielfacher mit einem mechanisch widerstandsfähigen Trägerkörper (12) aus Metall oder Keramik beschrieben, der einen Vervielfacherkanal bildet, dessen Wand mit einer sekundäremissionsfähigen Schicht (22) beschichtet ist, die durch Reduktion der Oberfläche einer Glasurschicht erzeugt wurde. Der thermische Ausdehnungskoeffizient des Materials des Trägerkörpers ist mindestens 10% größer als der der Glasurschicht, um das Auftreten von Rissen, die das elektrische Arbeiten des Vervielfachers beeinträchtigen, zu verhindern bzw. den Einfluß etwaiger Risse weitgehend auszuschalten. Der Kanalvervielfacher hat vorzugsweise einen sich trichterförmig erweitenden Anfangsabschnitt. Die sekundäremissionsfähige Schicht (22) im trichterförmigen Anfangsabschnitt des Vervielfacherkanales ist durch eine spiralenförmige Rille in einen spiralenförmigen Streifen unterteilt, um eine Feldverteilung zu erzeugen, die ein effektiveres Sammeln der Elektronen im Anfangsabschnitt bewirkt. A channel secondary electron multiplier is described with a mechanically resistant carrier body (12) made of metal or ceramic, which forms a multiplier channel, the wall of which is coated with a secondary emission layer (22), which was produced by reducing the surface of a glaze layer. The coefficient of thermal expansion of the material of the carrier body is at least 10% greater than that of the glaze layer in order to prevent the occurrence of cracks which impair the electrical operation of the multiplier or to largely eliminate the influence of any cracks. The channel multiplier preferably has a funnel-shaped initial section. The secondary emissive layer (22) in the funnel-shaped initial section of the multiplier channel is divided into a spiral-shaped strip by a spiral-shaped groove in order to produce a field distribution which causes the electrons in the initial section to be collected more effectively.

Discharge device for fluidized bed reactors

A Dynode for an Electron Multiplier and Method of Making the Same

1,193,393. Electron multipliers; cathode materials. R.C.A. CORPORATION. 4 July, 1968 [14 July, 1967], No. 32000/68. Heading H1D. [Also in Division C1] A dynode for an electron multiplier comprises a metallic substrate and a coating of magnesium oxide on the substrate, the magnesium oxide coating being formed by pyrolytic decomposition of a vapour of magnesium acetylacetonate or a vapour of a volatile substituted magnesium acetylacetonate. The surface of the substrate may be a coating of silver of 10,000 Š thickness. The magnesium oxide coating is preferably 100 to 1000 Š in thickness, and may be subsequently treated with caesium.

Electron emission device and method of forming electron workfunction reducing material layer on electron emission surface

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Semiconductor cathode

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Electron multiplier production method and electron multiplier

An electron multiplier production method including a main body portion, and a channel provided in the main body portion to open at one end surface and the other end surface of the main body portion and emits secondary electrons includes a first step of preparing a main body member including the one end surface and the other end surface, a communicating hole for the channel through which the one end surface and the other end surface communicate being provided in the main body member, a second step of forming the channel by forming a deposition layer including at least a resistive layer on an outer surface of the main body member and an inner surface of the communicating hole using an atomic layer deposition method, and a third step of forming the main body portion by removing the deposition layer formed on the outer surface of the main body member.

An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure

Patent FR2091148A5

Electron multiplier device having a nanodiamond layer

The invention relates to an electron multiplier (1) for a system for detecting electromagnetic radiation or an ion flow. The multiplier (1) comprises at least one active structure (2) for receiving a flow of incident electrons and for emitting a flow of so-called secondary electrons in response. Said active structure (2) comprises a substrate (3) on which a thin nanodiamond layer (4) is arranged, wherein said layer consists of diamond particles, the average size of which is no greater than 100 nm.

ELECTRODE FOR SECONDARY ELECTRON EMISSIONS.

Controlled gain electron multiplier - uses two microchannel plates mounted one on other and having main surfaces held at different electric potentials

The electron multiplier has high controlled amplification at low noise levels and is based on a design using microchannel plates, with secondary electron emission. It comprises first and second microchannel plates the second being mounted on the first. The dia. of the second plate's channels is then less than that of the first plate's channels. The electric potentials applied to the main surfaces of the first plate are so calculated that each of the microchannels works in the saturation region of the gain characteristic. The electric potentials applied to the other main surfaces of the second plate are such that the second plate works in the gain characteristic's saturation region as a result of multiplication of the output charge from the first microchannel plate.

Method for fabrication of discrete dynode electron multipliers

A method for manufacturing a discrete dynode electron multiplier includes employing micromachining and thin film techniques to produce tapered apertures in an etchable substrate, bonding the substrates together and activating the internal surfaces of the etched substrate using chemical vapor deposition or oxidizing and nitriding techniques.

SEMI-CONDUCTIVE CATHOD WITH SECONDARY EMISSIONS AND TUBES WITH SUCH A CATHOD.

Metal Encapsulated Photocathode Electron Emitter

포토캐소드(photocathode) 구조물로서, Cs 2 Te, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, 및 금속 중 하나 이상을 포함할 수 있는 포토캐소드 구조물이, 외부 표면 상에 보호 필름을 갖는다. 보호 필름은 루테늄, 니켈, 백금, 크롬, 구리, 금, 은, 알루미늄, 및 이들의 합금 중 하나 이상을 포함한다. 보호 필름은 1nm에서부터 10nm까지의 두께를 가질 수 있다. 포토캐소드 구조물은 스캐닝 전자 현미경과 같은 전자 빔 툴에서 사용될 수 있다. A photocathode structure, which may include one or more of Cs 2 Te, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, and a metal, has a protective film on an outer surface. The protective film contains one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, and alloys thereof. The protective film may have a thickness from 1 nm to 10 nm. The photocathode structure can be used in an electron beam tool such as a scanning electron microscope.

Source of electrons and method of its manufacture

FIELD: electronics, information display systems based on autoemitting devices. SUBSTANCE: source of electrons comprises insulating backing with first conductive film formed on it and forming the pulling electrode drawing electrons from autoemitting cathode and having area of surface from which secondary electron emission is conducted, dielectric layer of cathode holder with holes above first conductive film having part expanding over outline of area of hole adjacent to first conductive film, second conductive film part of which is arranged on walls of hole excluding walls of expanding part, another part positioned on first conductive film in hole to form region of secondary electron emission, part protruding into expanding part of hole directed to edge of part of conductive film located on bottom of hole and having vacuum gap with films on bottom of hole. Butt of protruding part forms autoemitting electrode. For manufacturing the source of electrons on backing with elements of first conductive film there are formed isles of additional coat of two layers above elements of first conductive layer and dielectric layer is deposited. In agreement with another version for manufacturing source of electrons isles of additional coat made of two layers are formed above elements of first conductive film located on insulated backing, dielectric layer is deposited and holes up to lower layer of additional coat are formed. Additional coat is etched, second conductive layer is formed by method of vacuum sputtering with formation of its break over outline of holes in shadow of directed flow of particles. Then upper layer of isle of additional coat is etched and interconnections are formed. EFFECT: higher efficiency. 5 cl, 11 dwg

Improvements relating to secondary electron emissive electrodes

559,591. Alloys; converting metallic surfaces into oxides. STANDARD TELEPHONES & CABLES Ltd. (International Standard Electric Corporation). July 17, 1942, No. 9971. [Classes 82 (i) and 82 (ii)] [Also in Group XL] Secondary electron emissive electrodes are formed by subjecting an alloy containing Be or Mg to controlled oxidation whereby a thin film of pure oxide of the Be or Mg is formed. The Specification refers to treatment of the following alloys at the stated temperatures in an oxidizing atmosphere such as air:-Cu 98 per cent., Be 2 per cent., at bright red heat: Al 98 per cent., Be 2 per cent., at 700‹ C.; Al 99.8 per cent.; Be 0.2 per cent., at 630‹ C., Al 97 per cent., Be 3 per cent., at 500‹ C.; Al 99.97 per cent., Mg 0.03 per cent., at a temperature just below the melting point of the alloy; Al 99.9 per cent., Mg 0.1 per cent., at 620‹ C.; A1 98.6 per cent., Mg 1.4 per cent., at 400‹ C.

Amorphous electron multiplier

Glass for secondary emission electrode

Electron emitter

Plasma display panel and drive method therefor

어두운 화상을 디스플레이하는 경우, 표현 능력을 향상시킬 수 있는 플라즈마 디스플레이 패널 및 그 구동 방법에 관한 것이다. 플라즈마 디스플레이 패널은 방전 셀을 대면하는 부분에 각각 배치된 형광체 층을 포함하고, 방전 가스는 방전 공간에 봉입된다. 형광재 및 2 차 전자 방출 재료를 포함한 플라즈마 디스플레이 패널 화소 셀의 구동 방법은, 화소 셀을 리셋 방전하여 개별 화소 셀을 점등 모드 및 소등 모드 중 하나의 상태로 초기화하는 리셋 단계, 및 화소 셀이 화소 데이터에 따라 선택적으로 어드레스 방전되어, 개별 화소 셀을 점등 모드 및 소등 모드 중 다른 하나의 상태로 시프트하는 어드레스 단계를 포함하고, 리셋 단계 및 어드레스 단계는 1 필드 디스플레이 기간내의 선두 서브필드 및 제 2 서브필드의 각각에서 연속적으로 실행된다. 각각의 리셋 단계에서, 양극측으로 설정된 행 전극쌍 및 음극측으로 설정된 열 전극에서, 일 측의 행 전극의 전압이 일 측의 행 전극과 열 전극의 사이에 인가되어, 상기 일 측의 행 전극과 상기 열 전극 사이에 리셋 방전이 유도된다. 또 다른 양태에서, 1 필드 디스플레이 기간의 선두 서브필드에서, 양극측으로 설정된 행 전극쌍 및 음극측으로 설정된 열 전극에서, 일 측의 행 전극의 전압이 일 측의 행 전극과 열 전극의 사이에 인가되어, 모든 화소 셀을 소등 모드로 초기화하는 리셋 방전이 모든 화소 셀내에서 열 전극과 행 전극 사이에서 유도된다. 화소 셀, 산화 마그네슘, 발광 In the case of displaying a dark image, the present invention relates to a plasma display panel and a driving method thereof capable of improving the expressive ability. The plasma display panel includes phosphor layers disposed in portions facing the discharge cells, and the discharge gas is enclosed in the discharge space. A method of driving a plasma display panel pixel cell including a fluorescent material and a secondary electron emission material includes a reset step of resetting and discharging pixel cells to initialize individual pixel cells to one of a lit mode and an unlit mode, and the pixel cells are pixels And an address step of selectively discharging according to the data to shift the individual pixel cells to the other of the lit mode and the unlit mode, wherein the reset step and the address step comprise the first subfield and the second subfield in the one field display period. It is executed in succession in each of the fields. In each reset step, in the row electrode pair set on the anode side and the column electrode set on the cathode side, the voltage of the row electrode on one side is applied between the row electrode on the one side and the column electrode, so that the row electrode on the one side and the Reset ...

Photomultiplier

A photomultiplier for detecting ultraviolet rays in which solar blind characteristics are adjusted with high precision. The photomultiplier comprises a hermetically sealed container having a window member for taking in light to be detected, and an electron multiplying section including a photocathode and a plurality of stages of dinode and performing cascade multiplication on photoelectrons from the photocathode is arranged in the hermetically sealed container. The photocathode contains AlXGa1-XN (0≤X<1). Out of the plurality of stages of dinode, at least two continuous stages of dinode including the first stage dinode receiving photoelectrons from the photocathode are composed of a beryllium copper alloy substrate, respectively, and a secondary electron emission surface containing beryllium oxide is formed on the inner wall of a plurality of secondary electron multiplication holes provided in each beryllium copper alloy substrate.

Electron emitting method of electron emitter

An electron emitter has an emitter section formed on a substrate, and a cathode electrode and an anode electrode formed on a same surface of the emitter section. A slit is formed between the cathode electrode and the anode electrode. A drive voltage from a pulse generation source is applied between the cathode electrode and the anode electrode, and the anode electrode is connected to the ground. A collector electrode is provided above the emitter section at a position facing the slit. The collector electrode is connected to a bias voltage source through a resistor. The emitter section is made of a piezoelectric material.

Image intensifier and electron multiplier therefor

An image intensifier and electron multiplier therefor is disclosed. Photons of an image impinge a photo-cathode that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure. The semiconductor structure has an input surface for receiving electrons and an emission surface for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.

Cold cathode, cold cathode discharge lamp, and method for producing the same

A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

Electron emitter

A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Image intensifier with stray particle shield

A light intensifier includes a semiconductor structure to multiply electrons and block stray particles (e.g., photons and/or ions). The semiconductor structure includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges a reception surface of the semiconductor structure, blocking regions that are doped to direct the plurality of electrons towards emissions areas of an emission surface of the semiconductor structure, and shielding regions that are doped to absorb stray particles that impinge the emission surface of the semiconductor structure.

Advanced electron multiplier

Plasma display panel and drive method therefor

A plasma display panel and a drive method therefor, which can enhance a representation capability when displaying a dark image. The plasma display panel includes fluorophor layers containing magnesium oxide. The drive method includes a reset step to initialize all the pixel cells into states of one of a light-up mode and a light-off mode, and an address step in which the pixel cells are caused to perform address discharges selectively in accordance with pixel data, which are successively executed in each of a head subfield and a second subfield within a one-field display period. In reset step, a voltage that sets row electrodes on one side, in the row electrode pairs as an anode and sets the column electrodes set as a cathode is applied between the row electrodes on the one side and the column electrodes.

Patent FR2384353B1

Perforated mega-boule wafer for fabrication of microchannel plates (MCPs)

A mega-boule is used in fabricating microchannel plates (MCPs). The mega-boule has a cross-sectional surface including an island section, an inner perimeter section and an outer perimeter section, each section occupying a distinct portion of the cross-sectional surface. The island section is formed of a first plurality of optical fibers, transversely oriented to the cross-sectional surface, each optical fiber including a cladding formed of non-etchable material and a core formed of etchable material. The inner perimeter section is formed of non-etchable material and is disposed to surround the island section. The outer perimeter section is formed of a second plurality of optical fibers, transversely oriented to the cross-sectional surface, each optical fiber including a cladding formed of non-etchable material and a core formed of etchable material, and the outer perimeter section is disposed to surround the island section and the inner perimeter section. The first plurality of optical fibers of the island section form transverse microchannels for an MCP, when the island section is etched, and the second plurality of optical fibers of the outer perimeter section form perforated cleave planes, when the outer perimeter section is etched.

Electronically emitting substances

Improvements to electric shock devices

Device and method for fabrication of microchannel plates using a mega-boule wafer

The present invention provides a mega-boule for use in fabricating microchannel plates (MCPs). The mega-boule includes a cross-sectional surface having at least first, second and third areas, each area occupying a distinct portion of the cross-sectional surface. The first and second areas include a plurality of optical fibers, transversely oriented to the cross-sectional surface, each optical fiber having a cladding formed of non-etchable material and a core formed of etchable material. The third area is disposed interstitially between and surrounding the first and second areas, and includes non-etchable material.

ELECTRON MULTIPLE

Improved reflection mode dynode

The present invention provides a device configured to convert or amplify a particle, the conversion or amplification being reliant on the impact of a particle on a surface of the device causing the emission of one or more secondary electrons from the same surface, wherein the device comprises a carbon-based layer capable of secondary electron emission upon impact of a particle. The surface may be used to convert, for example, an ion into an electron signal, or an electron signal into an amplified electron signal. The invention is particularly applicable to conversion or amplification dynodes.