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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 7167. Отображено 100.
12-01-2012 дата публикации

Method and apparatus for removing photoresist

Номер: US20120006486A1
Автор: Jaroslaw W. Winniczek, Robert P. Chebi
Принадлежит: Lam Research Corp

A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

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Номер записи: 1
29-03-2012 дата публикации

Electrode and plasma processing apparatus

Номер: US20120073755A1
Автор: Daisuke Hayashi
Принадлежит: Tokyo Electron Ltd

Electric field intensity distribution of a high frequency power for plasma generation can be controlled without generating abnormal electric discharge. There is provided an electrode for a plasma processing apparatus capable of supplying a gas. The electrode may include a base member 105 a made of a dielectric material and having therein a certain space U; a cover 107 for airtightly sealing the space U and isolating the space U from a plasma generation space when the electrode is installed at the plasma processing apparatus; and multiple gas hole tubes 105 e passing through the cover member 107 , the space U and the base member 105 a . Each gas hole tube has a gas hole isolated from the space U.

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Номер записи: 2
01-11-2012 дата публикации

Plasma Processing Apparatus

Номер: US20120273136A1
Автор: Go Miya, Ken Yoshioka, Manabu Edamura
Принадлежит: Individual

A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring.

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Номер записи: 3
10-01-2013 дата публикации

Plasma processing apparatus

Номер: US20130008609A1
Автор: Chishio Koshimizu, Naoki Matsumoto, SATOSHI Tanaka, Toru Ito
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

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Номер записи: 4
10-01-2013 дата публикации

Methods for automatically determining capacitor values and systems thereof

Номер: US20130008871A1
Автор: Arthur H. Sato
Принадлежит: Individual

A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode.

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Номер записи: 5
07-02-2013 дата публикации

Gasket with positioning feature for clamped monolithic showerhead electrode

Номер: US20130034967A1
Автор: Gautam Bhattacharyya, Gregory R. Bettencourt, Sandy Chao, Simon Gosselin Eng.
Принадлежит: Individual

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

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Номер записи: 6
04-07-2013 дата публикации

Mixed mode pulsing etching in plasma processing systems

Номер: US20130168354A1
Автор: Keren Jacobs Kanarik
Принадлежит: Individual

A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.

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Номер записи: 7
21-11-2013 дата публикации

Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source

Номер: US20130305988A1
Автор: Mike Cristoforo, Robert L. Moffett, Tomoya Nakatsugawa, Walter Hrynyk, William D. Lee, William F. Divergilio
Принадлежит: Axcelis Technologies Inc

An ion source is disclosed that utilizes a capacitive discharge to produce ignition ions, which are subsequently used to ignite an inductively coupled plasma within a plasma chamber. In some embodiments, a capacitive discharge element is located along a gas feed line at a position that is upstream of a plasma chamber. The capacitive discharge element ignites a capacitive discharge within the gas feed line. The capacitive discharge contains ignition ions that are provided to a downstream plasma chamber. An inductively coupled plasma ignition element, in communication with the plasma chamber, ignites and sustains a high density inductively coupled plasma within the plasma chamber based upon ignition ions from the capacitive discharge. Due to the ignition ions, the inductively coupled plasma element can easily ignite the high density inductively coupled plasma, even at a low pressure.

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Номер записи: 8
21-11-2013 дата публикации

Contamination Removal Apparatus and Method

Номер: US20130306101A1
Автор: Gordon Scott Swanson, Ivin Varghese, Mehdi Balooch
Принадлежит: Rave N P Inc

A substrate dry cleaning apparatus, a substrate dry cleaning system, and a method of cleaning a substrate are disclosed. The substrate dry cleaning system includes a substrate support and a reactive species generator. The reactive species generator includes a first conduit defining a first flow channel that extends to an outlet of the first conduit, the Gullet of the first conduit facing the substrate support, a first electrode, a second electrode facing the first electrode, the first flow channel disposed between the first electrode and the second electrode, a first inert wall disposed between the first electrode and the first flow channel, and a second inert wall disposed between the second electrode and the first flow channel.

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Номер записи: 9
05-12-2013 дата публикации

PASSIVE POWER DISTRIBUTION FOR MULTIPLE ELECTRODE INDUCTIVE PLASMA SOURCE

Номер: US20130320853A1
Автор: Brouk Victor, Carter Daniel
Принадлежит: ADVANCED ENERGY INDUSTRIES, INC.

Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma. 1. A method for controlling a spatial distribution of plasma in a processing chamber that includes a primary inductor and N secondary inductors , comprising:exciting the plasma in the processing chamber with the primary inductor;inductively coupling the primary inductor to each of N secondary inductors through the plasma, wherein N is equal to or greater than one; andterminating each of the N secondary inductors such that substantially all current that passes through each of the N secondary inductors results from mutual inductance through the plasma with the primary inductor, the current through each of the N secondary inductors affecting the spatial distribution of the plasma.2. A system for controlling a spatial distribution of plasma in a processing chamber that includes a primary inductor and N secondary inductors , comprising:means for exciting the plasma in the processing chamber with the primary inductor;means for inductively coupling the primary inductor to each of N secondary inductors through the plasma, wherein N is equal to or greater than one; andmeans for terminating each of the N secondary inductors such that substantially all current that passes through each of the N secondary inductors results from mutual inductance ...

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Номер записи: 10
12-12-2013 дата публикации

Showerhead insulator and etch chamber liner

Номер: US20130327480A1
Автор: James D. Carducci, Olga Regelman
Принадлежит: Applied Materials Inc

The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.

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Номер записи: 11
19-12-2013 дата публикации

PLASMA GENERATOR AND CLEANING/PURIFICATION APPARATUS USING SAME

Номер: US20130334955A1
Автор: Nakayama Satoshi, Narita Kenji, SAITOH Akihiko, Sanematsu Wataru
Принадлежит: Panasonic Corporation

A plasma generator includes: a liquid containing part containing water; a gas containing part; and a partition wall part that separates the liquid containing part and the gas containing part and is provided with a gas passage through which the gas in the gas containing part is led to the liquid containing part. The plasma generator is also provided with a first electrode arranged in the gas containing part and a second electrode arranged to be in contact with the liquid in the liquid containing part. The plasma generator is further provided with: a gas supply unit which supplies the gas to the gas containing part; a plasma power supply unit; and a projected part which serves as a drainage promotion part that prevents the liquid from remaining in the gas passage after the liquid in the liquid containing part is drained. 19-. (canceled)10. A plasma generator comprising:a liquid containing part configured to contain a liquid which includes water;a gas containing part configured to contain a gas;a partition wall part separating the liquid containing part and the gas containing part from each other and including a gas passage configured to lead the gas in the gas containing part to the liquid containing part;a first electrode arranged in the gas containing part;a second electrode arranged in contact with the liquid in the liquid containing part;a gas supply unit configured to supply the gas including oxygen to the gas containing part in a way that the gas in the gas containing part is transferred to the liquid containing part through the gas passage by pressure;a plasma power supply unit configured to turn the gas, which is transferred into the liquid in the liquid containing part by pressure, into plasma by causing electrical discharge between the first electrode and the second electrode through application of a predetermined voltage between the first electrode and the second electrode; anda drainage promotion part configured to prevent the liquid in the liquid ...

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Номер записи: 12
16-01-2014 дата публикации

Processing apparatus

Номер: US20140014269A1
Автор: Masami Hasegawa, Tomoaki Osada
Принадлежит: Canon Anelva Corp

A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces.

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Номер записи: 13
20-02-2014 дата публикации

Plasma baffle ring for a plasma processing apparatus and method of use

Номер: US20140051253A1
Автор: Joydeep Guha
Принадлежит: Lam Research Corp

A plasma processing apparatus includes a baffle ring which separates an internal space of a vacuum chamber into a plasma space and an exhaust space. Plasma is generated in the plasma space by exciting a process gas using an energy source. The process gas is then exhausted out of the plasma space through the plasma baffle ring which surrounds an outer periphery of a substrate support. The plasma baffle ring comprises an inner support ring, an outer support ring, and vertically spaced apart circumferentially overlapping rectangular blades extending between the inner ring and the outer ring. Each blade has a major surface used to block a line of sight from the plasma space to the exhaust space, wherein the major surfaces of the blades are configured to capture nonvolatile by-products, such as plasma etch by-products, before the by-products evacuate the plasma space.

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Номер записи: 14
27-02-2014 дата публикации

Phase And Frequency Control Of A Radio Frequency Generator From An External Source

Номер: US20140055034A1
Автор: David J. Coumou
Принадлежит: MKS Instruments Inc

Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator.

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Номер записи: 15
06-03-2014 дата публикации

Plasma processing apparatus and cleaning method for removing metal oxide film

Номер: US20140060572A1
Автор: Cheonsoo Han, Chiaki Yasumuro, Hiroyuki Toshima, Masamichi Hara, Morihiro Takanashi, Osamu Yokoyama, Takashi Sakuma, Toshiaki Fujisato
Принадлежит: Tokyo Electron Ltd

In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

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Номер записи: 16
27-03-2014 дата публикации

Baffle and method for treating surface of the baffle, and substrate treating apparatus and method for treating surface of the apparatus

Номер: US20140083612A1
Автор: Youngyeon Ji
Принадлежит: PSK Inc

Provided is a baffle. The baffle has holes for distributing a process gas excited in a plasma state. A surface of the baffle is treated by using a surface treating material containing an aromatic compound.

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Номер записи: 17
07-01-2021 дата публикации

Cleaning method and plasma processing apparatus

Номер: US20210001383A1
Автор: Masahiro Yamazaki
Принадлежит: Tokyo Electron Ltd

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

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Номер записи: 18
06-01-2022 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Номер: US20220005673A1
Автор: FUNAKI Katsunori, ICHIMURA Keita, IGAWA Hiroto, NAKAYAMA Masanori, TAKAMI Eiko, TAKESHIMA Yuichiro, Tsubota Yasutoshi, UEDA Tatsushi, YAMAKADO Yuki
Принадлежит: KOKUSAI ELECTRIC CORPORATION

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma. 1. A method of manufacturing a semiconductor device , comprising:accommodating a substrate in a process chamber;supplying a first gas containing oxygen into the process chamber;generating plasma in the process chamber by exciting the first gas;supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; andprocessing the substrate with oxidizing species generated by the plasma.2. The method of claim 1 , wherein in generating the plasma claim 1 , the plasma is generated so that the density distribution of the plasma in the process chamber is non-uniform in a plane direction of the substrate.3. The method of claim 1 , wherein in supplying the first gas claim 1 , the first gas is supplied to a first region in the process chamber claim 1 , andwherein in adjusting the hydrogen concentration distribution in the process chamber, the second gas is supplied to a second region which is a region above a processing surface of the substrate and is a region different from the first region in a plane direction of the substrate.4. The method of claim 1 , wherein in supplying the first gas claim 1 , the first gas is supplied to a plasma generation region where the plasma is generated claim 1 ,wherein in adjusting the hydrogen concentration distribution in the process chamber, the second gas is supplied to ...

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Номер записи: 19
06-01-2022 дата публикации

SUBSTRATE PROCESSING APPARATUS, REFLECTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20220005678A1
Автор: Inada Tetsuaki, YASUI Takeshi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

Described herein is a technique capable of improving a heating efficiency for a substrate to be heated by a heater. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel defining a process chamber; a process gas supplier configured to supply a process gas into the process vessel; an electromagnetic field generation electrode extending along an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface of the process vessel and configured to generate an electromagnetic field in the process vessel by being supplied with a high frequency power; a heater configured to radiate an infrared light to heat a substrate accommodated in the process chamber; and a reflector provided between the process vessel and the electromagnetic field generation electrode and configured to reflect the infrared light radiated from the heater. 1. A substrate processing apparatus comprising:a process vessel defining a process chamber;a process gas supplier configured to supply a process gas into the process vessel;an electromagnetic field generation electrode extending along an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface of the process vessel and configured to generate an electromagnetic field in the process vessel by being supplied with a high frequency power;a heater configured to radiate an infrared light to heat a substrate accommodated in the process chamber; anda reflector provided between the process vessel and the electromagnetic field generation electrode and configured to reflect the infrared light radiated from the heater.2. The substrate processing apparatus of claim 1 , wherein the heater comprises a susceptor heater provided in a susceptor configured to support the substrate in the process chamber.3. The substrate processing apparatus of claim 1 , wherein the heater comprises a lamp ...

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Номер записи: 20
05-01-2017 дата публикации

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20170004956A1
Автор: Ishida Katsuhiro, Kondo Takashi, KUBOTA Toru, Yasuda Kenta
Принадлежит:

A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil. 1. A plasma processing method comprising: a chamber;', 'a lower electrode disposed in the chamber;', 'an upper electrode disposed in the chamber and facing the lower electrode;', 'a focus ring disposed in the chamber and surrounding a peripheral edge of the lower electrode; and', 'an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode;, 'preparing a plasma processing apparatus, the plasma processing apparatus comprisingplacing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring;introducing process gas into the chamber;applying high-frequency power across the upper electrode and the lower electrode to generate plasma of the process gas; andgenerating a magnetic field by supplying a current to the annular coil to level an interface of a plasma sheath on an upper portion of the substrate with the interface of the plasma sheath on an upper portion of the focus ring.2. The plasma processing method according to claim 1 ,wherein the leveling of the interface of the plasma sheath reduces the ...

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Номер записи: 21
07-01-2016 дата публикации

SHOWERHEAD HAVING A DETACHABLE HIGH RESISTIVITY GAS DISTRIBUTION PLATE

Номер: US20160005571A1
Автор: Dadu Usama, DELLA ROSA JASON, Kim Jisoo, KNYAZIK VLADIMIR, Lee Wonseok, NOORBAKHSH HAMID
Принадлежит:

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate. 1. A showerhead for use in a semiconductor processing chamber , comprising:a base having a first side and a second side opposing the first side;a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; anda thermal gasket disposed in a gap between the base and gas distribution plate.2. The showerhead of claim 1 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the base and the gas distribution plate.3. The showerhead of claim 1 , further comprising:an yttrium fluoride coating on the second side of the base.4. The showerhead of claim 1 , further comprising:one or more pins pressed into the second side of the base and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the base.5. The showerhead of claim 4 , wherein each of the one or more pins includes a through-hole to allow a volume behind each pin to be evacuated.6. The showerhead of claim 1 , wherein the base comprises a plurality of through holes extending from the first side to the second ...

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Номер записи: 22
07-01-2016 дата публикации

CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT

Номер: US20160005572A1
Автор: Chen Xinglong, Chuc Kien, Garg Saurabh, Hinckley Kimberly, Liang Qiwei, Lubomirsky Dimitry, Park Soonam, Tran Toan, Venkataraman Shankar, Yang Jang-Gyoo
Принадлежит:

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. 1. A gas distribution assembly , comprising: an inner annular wall located at an inner diameter, an outer annular wall located at an outer diameter, an upper surface, and a lower surface;', 'an upper recess formed in the upper surface;', 'a lower recess formed in the lower surface;', 'a first fluid channel defined in the lower surface that is located in the annular body radially inward of the lower recess;, 'an annular body comprisingan upper plate coupled with the annular body at the upper recess, wherein the upper plate defines a plurality of first apertures; and a plurality of second apertures defined therein, wherein the second apertures align with the first apertures defined in the upper plate;', 'a plurality of third apertures defined therein and located between the second apertures;, 'a lower plate coupled with the annular body at the lower recess, and covering the first fluid channel, the lower plate comprisingwherein the upper and lower plates are coupled with one another such that the first and second apertures are aligned to form a channel through the upper and lower plates.2. The gas distribution assembly of claim 1 , further comprising a second fluid channel defined in the lower surface that is located in the annular body radially outward of the first fluid channel claim 1 , wherein a plurality of ports are defined in a portion of the annular body defining an outer wall of the first fluid channel and an inner wall of the second fluid channel claim 1 , wherein the plurality of ports are ...

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Номер записи: 23
07-01-2016 дата публикации

PLASMA SOURCE

Номер: US20160005575A1
Автор: Daniel Alain, Duminica Florin Daniel, LeClercq Vincent, Silberberg Eric
Принадлежит: ARCELORMITTAL INVESTIGACIÓN Y DESARROLLO SL

The invention relates to a plasma source () for depositing a coating onto a substrate (), which is connectable to a power source (P) and includes: an electrode (); a magnetic assembly () located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket () including a first and second central magnet () and at least one head magnet (); and an electrically insulating enclosure () arranged such as to surround the electrode and the magnets. 119. A plasma source () intended for the depositing of a coating on a substrate () and able to be connected to a power source (P) , comprising:{'b': 2', '3', '6', '21', '22', '23', '24', '26', '27', '28, 'a) an electrode () delimiting a discharge cavity () leading onto an aperture () opposite which the said substrate can be positioned, the cross-section of the said electrode comprising a first and a second side wall (, ) positioned either side of a bottom part (, ) provided with a central portion protruding into the said discharge cavity, the said central portion comprising a first and a second central wall (, ) and a top part () joining together the two central walls;'}{'b': 4', '46, 'claim-text': [{'b': 41', '42', '21', '22', '6, 'i) at least a first and a second side magnet (, ), the said first side magnet, respectively second side magnet, being arranged behind the said first side wall () and second side wall () respectively, in the vicinity of the said aperture (), the said side magnets being oriented such that their exposed poles have the same polarity;'}, {'b': 43', '44', '26', '27, 'ii) at least a first and a second central magnet (, ), the said first central magnet, and second central magnet respectively, being arranged behind the said first central wall () and second central wall () respectively, the said two central magnets being oriented such that their exposed pole is of opposite polarity to that of the exposed poles of the side magnets;'}, {'b': 45', '28, 'iii) at ...

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Номер записи: 24
07-01-2016 дата публикации

METHODS OF REMOVING RESIDUAL POLYMERS FORMED DURING A BORON-DOPED AMORPHOUS CARBON LAYER ETCH PROCESS

Номер: US20160005602A1
Автор: Kong Byungkook, Lee Hoon Sang, Yoo Jeong Hyun
Принадлежит:

Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N), oxygen (O), hydrogen (H), and methane (CH). 1. A method of etching a feature in a substrate , comprising:exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and{'sub': 2', '2', '2', '4, 'exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N), oxygen (O), hydrogen (H), and methane (CH).'}2. The method of claim 1 , wherein the first process gas comprises one of a fluorine-containing gas or a chlorine-containing gas.3. The method of claim 1 , wherein the second plasma forms hydroxylamine (NHOH) to react with the residual polymers proximate the bottom of the feature.4. The method of claim 1 , further comprising forming the first plasma by igniting the first process gas using an RF power source.5. The ...

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Номер записи: 25
07-01-2021 дата публикации

ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER HIGH SURFACE BINDING ENERGY MATERIALS

Номер: US20210005425A1
Автор: Brouri Mohand, Kanarik Keren Jacobs, Mukherjee Tamal, Pan Yang, Tan Samantha, Yang Wenbing
Принадлежит:

Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas. 1. A method of etching a refractory metal or other high surface binding energy (high E) material on a substrate , the method comprising:{'sub': 'O', 'providing a substrate comprising an exposed refractory metal/high Esurface;'}{'sub': O', 'O, 'exposing the refractory metal/high Esurface to a modification gas to modify the surface and form a modified refractory metal/high Esurface; and'}{'sub': O', 'O', 'O, 'exposing the modified refractory metal/high Esurface to an energetic particle to preferentially remove the modified refractory metal/high Esurface relative to an underlying unmodified refractory metal/high Esurface;'}{'sub': O', 'O, 'wherein the exposed refractory metal/high Esurface after removing the modified refractory metal/high Esurface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.'}2. The method of claim 1 , wherein the smoothness of the refractory metal/high Esurface is maintained.3. The method of claim 1 , wherein the smoothness of the refractory metal/high Esurface is increased.4. The method of claim 3 , wherein the smoothness ...

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Номер записи: 26
07-01-2021 дата публикации

APPARATUS AND METHOD FOR TREATING SUBSTRATE

Номер: US20210005426A1
Автор: Lee Dongha
Принадлежит: SEMES CO., LTD.

An apparatus for treating a substrate includes a chamber having a treatment space therein, a support unit that supports the substrate in the treatment space, a gas supply unit that supplies, into the treatment space, a process gas used to treat the substrate, a plasma source that generates plasma by exciting the process gas supplied into the treatment space, heaters that heat the support unit for different regions of the substrate, a heater power supply that applies powers to the heaters, a plurality of heater cables that deliver the powers to the heaters, and variable capacitors configured be grounded, the variable capacitors being connected to the plurality of heater cables, respectively. 1. An apparatus for treating a substrate , the apparatus comprising:a chamber having a treatment space therein;a support unit configured to support the substrate in the treatment space;a gas supply unit configured to supply, into the treatment space, a process gas used to treat the substrate;a plasma source configured to generate plasma by exciting the process gas supplied into the treatment space;heaters configured to heat the support unit for different regions of the substrate;a heater power supply configured to apply powers to the heaters;a plurality of heater cables configured to deliver the powers to the heaters; andvariable capacitors configured to be grounded, the variable capacitors being connected to the plurality of heater cables, respectively.2. The apparatus of claim 1 , further comprising:a filter configured to pass the powers through the plurality of heater cables and interrupt introduction of RF power into the heater power supply,wherein the plurality of heater cables are connected between the filter and the heaters.3. The apparatus of claim 2 , wherein the variable capacitors configured to be grounded are connected to input terminals of the filter.4. The apparatus of claim 3 , wherein the filter includes a plurality of terminals claim 3 , andwherein the variable ...

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Номер записи: 27
08-01-2015 дата публикации

INTERNAL SPLIT FARADAY SHIELD FOR AN INDUCTIVELY COUPLED PLASMA SOURCE

Номер: US20150008213A1
Автор: Miller Thomas G., Zhang Shouyin
Принадлежит: FEI COMPANY

An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber. 117-. (canceled)18. A method of operating an inductively coupled plasma source including a plasma chamber comprising:providing radio frequency energy into the plasma chamber from at least one conductive coil to maintain a plasma in the plasma chamber;providing a conductive shield to reduce capacitative coupling between the source of the radio frequency and the plasma;maintaining the plasma and the conductive shield at electrical potentials different from ground potential;extracting charged particles from the plasma chamber; andfocusing the charged particles into a beam and directing the beam onto or near a workpiece outside of the plasma chamber.19. The method of further comprising providing a cooling fluid to cool the plasma chamber.20. The method of in which providing a conductive shield includes providing a conductive shield coated onto the interior wall of the plasma chamber.21. The method of in which providing a conductive shield includes providing a conductive material inserted into the interior of the plasma chamber.22. The method of in which maintaining the plasma and the conductive shield at electrical potentials different from ground potential includes maintaining the plasma at a high voltage.23. The method of in which the conductive shield is not liquid cooled.24. The method of in which there is no metal sputter target for physical vapor deposition in the plasma chamber.25. The method of in which providing radio frequency energy to maintain a plasma in the plasma chamber includes maintaining a plasma lacking metal ions.26. ...

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Номер записи: 28
08-01-2015 дата публикации

MICROPLASMA JET DEVICES, ARRAYS, MEDICAL DEVICES AND METHODS

Номер: US20150008825A1
Автор: CHO JIN HOON, Eden J. Gary, Ma Jeffrey H., Park Sung-Jin
Принадлежит: The Board of Trustees of the University of IIlinois

Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes. 1. A microplasma jet device comprising:a monolithic polymer;one or more elongated microcavities within said monolithic polymer, said elongated microcavities extending entirely through said monolithic polymer and being dimensioned to accept gas flow therethrough;electrodes buried within said monolithic polymer, disposed proximate to said elongated cavities such that said electrodes can generate and sustain plasma within said elongated cavities, but isolated from said elongated cavities by portions of said monolithic;a gas supply to direct gas flow through said elongated cavities; anda power supply to power said electrodes to generate plasma within said elongated cavities.2. The device of claim 1 , comprising an array of said elongated cavities.3. The device of claim 1 , wherein said gas supply supplies a low molecular weight atomic species.4. The device of claim 3 , wherein the low molecular weight atomic species comprises Helium claim 3 , Neon or Argon.5. The device of claim 1 , wherein said one or more elongated microcavities has a length to diameter ratio of at least 10:1.6. The device of claim 1 , wherein said electrodes comprise one of foils claim 1 , rods wires or metal layers.7 ...

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Номер записи: 29
20-01-2022 дата публикации

SYSTEM AND METHOD FOR CLEANING SURFACE OF SUBSTRATE USING ROLL-TO-ROLL PLASMA GENERATING DEVICE

Номер: US20220020562A1
Автор: LEE Chang Hoon
Принадлежит:

A roll-to-roll surface cleaning treatment system may include an upper housing containing a first plasma generating device and a first transfer roller that faces a nozzle from which a plasma beam generated by the first plasma generating device is discharged and that winds and transfers a flexible substrate, the upper housing comprising a gas inlet, an entrance through which the flexible substrate is introduced, and an outlet through which the flexible substrate is discharged, and a lower housing connected to the entrance of the upper housing and containing a second plasma generating device and a second transfer roller that faces a nozzle from which a plasma beam generated by the second plasma generating device is discharged and that winds and transfers the flexible substrate, the lower housing comprising a gas outlet, and an inlet through which the flexible substrate is introduced. 1. A roll-to-roll plasma surface cleaning treatment system , comprising:an upper housing containing a first plasma generating device and a first transfer roller that faces a nozzle from which a plasma beam generated by the first plasma generating device is discharged and that winds and transfers a flexible substrate, the upper housing comprising a gas inlet, an entrance through which the flexible substrate is introduced, and an outlet through which the flexible substrate is discharged; anda lower housing connected to the entrance of the upper housing and containing a second plasma generating device and a second transfer roller that faces a nozzle from which a plasma beam generated by the second plasma generating device is discharged and that winds and transfers the flexible substrate, the lower housing comprising a gas outlet, and an inlet through which the flexible substrate is introduced,wherein the system is configured to maintain the upper housing at a low-temperature atmosphere by introducing a low-temperature refrigerant gas through the gas inlet.2. The system according to claim 1 , ...

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Номер записи: 30
20-01-2022 дата публикации

PLASMA GENERATING DEVICE

Номер: US20220020564A1
Автор: CHANG CHIA-CHIANG
Принадлежит: AP PLASMA CORPORATION

A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma. 1. A plasma generating device , comprising:a plasma sprinkler head comprising a case and a plasma generating assembly, wherein the plasma generating assembly is disposed on the case and has a plasma nozzle located on a side of the case; andan outer housing disposed on the case and located around the plasma nozzle.2. The plasma generating device as claimed in claim 1 , wherein the outer housing has an open end; at least a part of the plasma nozzle is located between the open end and the case.3. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port located between the open end and the case.4. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port protruding out of the open end.5. The plasma generating device as claimed in claim 2 , wherein the outer housing has a surrounding wall surrounding around the plasma nozzle and having the open end; the surrounding wall has at least one vent located between the open end and the case.6. The plasma generating device as claimed in claim 1 , wherein the outer housing is movably disposed on the case.7. The plasma generating device as claimed in claim 6 , further comprising at least one engaging members claim 6 , wherein the case has at least one engaging hole adapted to be engaged with at least one engaging member; the outer housing has at least one displacement adjusting structure having a plurality of ...

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Номер записи: 31
14-01-2016 дата публикации

LAYER-FORMING DEVICE AND INJECTOR

Номер: US20160010209A1
Автор: Hattori Nozomu, Miyatake Naomasa, Mori Yasunari
Принадлежит:

A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot. 1. A layer-forming device that forms a thin layer on a substrate in atomic layer unit , the layer-forming device comprising:a feeding mechanism configured to feed the substrate during layer formation of the substrate;an injector unit including a plurality of injectors provided along a feeding passage of the substrate with gaps, and configured to supply a layer-forming gas toward the substrate to form, on the substrate being fed, a layer of a layer-forming component of the layer-forming gas; anda reactant supply unit configured to supply a reactant that reacts with the layer-forming component toward the substrate through the gaps,a substrate opposing surface of each of the injectors, the surface facing the substrate, includes a layer-forming gas supply slot configured to output the layer-forming gas, first gas exhaust slots provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and configured to suck an excess gas above the substrate, and inert gas supply slots provided on far sides of the respective first gas ...

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Номер записи: 32
27-01-2022 дата публикации

FILM THICKNESS UNIFORMITY IMPROVEMENT USING EDGE RING AND BIAS ELECTRODE GEOMETRY

Номер: US20220028656A1
Автор: Abraham Jacob, BEHERA Swayambhu Prasad, Bevan Malcolm J., GUARINI Theresa Kramer, Hwang Bernard L., Liu Wei, Lo Kin Pong, Nagorny Vladimir
Принадлежит:

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring. 1. An apparatus for substrate processing comprising: a bottom surface;', 'an upper surface; and', 'a groove disposed in the upper surface;, 'an edge ring, comprising a first portion extending from the groove; and', 'a second portion connected to the first portion and extending radially inward., 'an overhang ring disposed in the groove, the overhang ring further comprising2. The apparatus of claim 1 , wherein the edge ring comprises a quartz material.3. The apparatus of claim 1 , wherein the overhang ring comprises a quartz material.4. The apparatus of claim 1 , wherein the edge ring further comprises a plurality of tabs disposed on the upper surface.5. The apparatus of claim 4 , wherein the plurality of tabs comprises 3 to 10 tabs.6. The apparatus of claim 4 , wherein the plurality of tabs are disposed radially inward of the groove.7. The apparatus of claim 4 , wherein the second portion of the overhang ring extends radially inward of an outer surface of the plurality of tabs.8. The apparatus of claim 1 , wherein the edge ring further comprises an outer ledge claim 1 , the outer ledge extending from the bottom surface of the edge ring.9. The apparatus of claim 1 , wherein the second portion of the overhang ring is perpendicular to the first portion of the overhang ring.10. The apparatus of claim 1 , wherein the overhang ring has an inner radius less than the inner radius of the edge ring.11. The apparatus of claim 1 , wherein the groove of the edge ring has sidewalls sized to accept the first portion of the overhang ring.12. An apparatus for substrate processing comprising: a bottom surface;', 'an upper surface;', 'a central opening; and', 'a groove ...

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Номер записи: 33
12-01-2017 дата публикации

ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL

Номер: US20170011891A1
Автор: BELEN Rodolfo P., GANI NICOLAS, Hammond, IV Edward P., NGUYEN ANDREW, Palagashvili David, SHEN MEIHUA, Willwerth Michael D., ZOU Jing
Принадлежит:

A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface. 1. A processing chamber for etching a substrate , comprising:a chamber body having a substrate support disposed on a cathode;an electrode disposed in the cathode and having a diameter greater than the substrate support;a focus ring disposed on an upper surface of the substrate support, the focus ring comprising a material selected from the group consisting of monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, and combinations thereof; anda quartz ring disposed on the upper surface of the substrate support, circumscribing the focus ring,wherein the focus ring has a flat lower surface and a notch formed in the flat lower surface.2. The chamber of claim 1 , wherein the focus ring has an internal wall at an inner diameter claim 1 , a first surface extending from the inner wall claim 1 , a step rising from the first surface claim 1 , and a second surface extending from the step claim 1 , wherein the second surface has horizontal dimension less than about 0.15 inches.3. The chamber of claim 2 , wherein the second surface has a horizontal dimension between about 0.08 inches and about 0.14 inches.4. The chamber of claim 2 , wherein the focus ring has a bevel extending from the second surface that forms an angle with the second surface of ...

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Номер записи: 34
15-01-2015 дата публикации

PLASMA PROCESSING METHOD

Номер: US20150014276A1
Автор: Yamazawa Yohei
Принадлежит:

A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

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Номер записи: 35
14-01-2016 дата публикации

GAS COOLED PLASMA SPRAYING DEVICE

Номер: US20160013021A1
Автор: Gold Matthew R.
Принадлежит:

A plasma spraying device may include a first electrode and a second electrode. The first electrode may define an ionizing gas channel and at least one cooling channel. A distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying spray gun proximate to a distal end of the first electrode. The second electrode is at least partially disposed in the ionizing gas channel. 1. A plasma spraying device comprising: an ionizing gas channel; and', 'at least one cooling gas channel, wherein a distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying device proximate to a distal end of the first electrode; and, 'a first electrode defininga second electrode disposed in the ionizing gas channel.2. The plasma spraying device of claim 1 , wherein the first electrode comprises copper.3. The plasma spraying device of claim 1 , wherein the ionizing gas channel exits the first electrode at an ionizing gas channel exit portion claim 1 , wherein the ionizing gas channel exit portion defines an ionizing gas channel exit portion axis claim 1 , wherein the first electrode defines a major axis claim 1 , and wherein an angle between the ionizing gas channel exit portion axis and the major axis is between about 20 degrees and about 90 degrees.4. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel comprises a plurality of cooling gas channels claim 1 , and wherein each of the plurality of cooling gas channels includes a distal end open to an exterior of the plasma spraying device.5. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel defines a cooling gas channel axis claim 1 , and wherein the cooling gas channel axis is substantially parallel to the major axis.6. The plasma spraying device of claim 1 , further comprising a material injection channel coupled to an external surface of the device.7. The plasma spraying device of claim 1 , wherein the ionizing ...

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Номер записи: 36
14-01-2016 дата публикации

System and Method for Protection of Vacuum Seals in Plasma Processing Systems

Номер: US20160013025A1
Автор: Nagorny Vladimir, Parks Steven, Zucker Martin
Принадлежит: MATTSON TECHNOLOGY, INC.

Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal. 1. A plasma processing system , comprising:a vacuum chamber defining a sidewall;a vacuum seal coupling the sidewall of the vacuum chamber to a heat sink; anda thermally conductive bridge coupled between the sidewall and the heat sink;wherein the thermally conductive bridge is positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from a heat source to the heat sink so that the heat path bypasses the vacuum seal.2. The plasma processing system of claim 1 , wherein the bridge is flexible and conformable to the shape of the vacuum seal and vacuum chamber.3. The plasma processing system of claim 2 , wherein the bridge is elastic so that a contact to the heat source and to the heat sink can be made by compressing the bridge in at least one direction.4. The plasma processing system of claim 3 , wherein the bridge comprises a first component for making contact with the heat source and a second component for making contact with the heat sink.5. The plasma processing system of claim 1 , wherein the bridge comprises a heat conducting component and elastic component coupled to the heat conducting component.6. The plasma processing system of claim 1 , wherein the heat path conducts through at least a portion of the sidewall.7. The plasma processing system of ...

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Номер записи: 37
14-01-2016 дата публикации

APPARATUS AND METHOD FOR EFFICIENT MATERIALS USE DURING SUBSTRATE PROCESSING

Номер: US20160013030A1
Автор: Allen Ernest E., Hertel Richard J., Singh Vikram, Venugopal Vijayakumar C.
Принадлежит:

A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species. 1. A processing apparatus comprising:a plasma chamber to house a plasma; andan extraction assembly disposed along a side of the plasma chamber, the extraction assembly configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate, andwherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.2. The processing apparatus of claim 1 , wherein the extraction assembly comprises an extraction plate having a grooved outer surface that faces the substrate.3. The processing apparatus of claim 1 , wherein the extraction assembly comprises an extraction plate having an extraction aperture and a beam blocker disposed within the plasma chamber and having at least one recess that faces the substrate through the extraction aperture.4. The processing apparatus of claim 3 , wherein the beam blocker and extraction aperture are interoperative to generate a plurality of menisci in a plasma sheath boundary of the plasma claim 3 , wherein a plurality of ion beams are extracted from the plurality of menisci and directed to the substrate claim 3 , wherein the etched species are generated as a plurality of sputter plumes over a range of sputter angles claim 3 , and wherein the at least one recess is tailored according to the range of sputter angles of the plurality of sputter plumes.5. The processing ...

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Номер записи: 38
14-01-2016 дата публикации

Substrate Processing Device and Method of Handling Particles Thereof

Номер: US20160013031A1
Автор: Han Saem Lee, Hee Sun Chae, Hyun Jun Kim, Jeong Hee CHO, Jong Sik LEE
Принадлежит: PSK Inc

Provided are a substrate processing device and a method of handing particles thereof. The substrate processing device includes: a process chamber providing a space in which a substrate is processed; a substrate support unit arranged in the process chamber and supporting the substrate; a plasma chamber providing a space in which plasma is generated; a gas supply unit supplying a process gas to the plasma chamber; a plasma source installed in the plasma chamber, wherein the plasma source generates the plasma from the process gas; a radio frequency (RF) power supply providing the plasma source with an RF signal for generating the plasma; a baffle arranged on the substrate support unit, wherein the baffle evenly supplies the plasma to a processing space in the process chamber; a direct current (DC) power supply applying a DC voltage to the baffle; a discharge unit discharging a particle generated in the process chamber by substrate processing; and a control unit controlling the DC power supply and handing the particle to prevent the contamination of the substrate by the particle.

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Номер записи: 39
11-01-2018 дата публикации

COLLAR, CONICAL SHOWERHEADS AND/OR TOP PLATES FOR REDUCING RECIRCULATION IN A SUBSTRATE PROCESSING SYSTEM

Номер: US20180012733A1
Автор: Blaquiere Ryan, Phillips Richard, Swaminathan Shankar
Принадлежит:

A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber. 1. A substrate processing system comprising:a processing chamber;a showerhead including a faceplate, a stem portion and a cylindrical base portion;a collar connecting the showerhead to a top surface of the processing chamber,wherein the collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction;a conical surface arranged adjacent to the cylindrical base and around the stem portion of the showerhead; andan inverted conical surface arranged adjacent to a top surface and sidewalls of the processing chamber,wherein the conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.2. The substrate processing system of claim 1 , wherein the gas channel defines a flow path that has a constant width and that is parallel to a direction of the secondary purge gas flowing from the plurality of gas slits.3. The substrate ...

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Номер записи: 40
11-01-2018 дата публикации

DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

Номер: US20180012763A1
Автор: KOBAYASHI Yuuki, Oka Masahiro, SUGIMOTO Yasuhiro, Ueda Hirokazu
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel. 1. A doping method for doping by injecting a dopant into a processing target substrate , the doping method comprising:a plasma doping processing step including setting a value of bias electric power supplied during a plasma doping processing to a predetermined value on premise of a washing processing to be performed after a plasma doping, and generating plasma within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate held on a holding pedestal in the processing vessel.2. The doping method of claim 1 , wherein claim 1 , in the plasma doping processing step claim 1 , the value of the bias electric power is set such that a dopant concentration of a top portion of the processing target substrate and a dopant concentration of a side portion of the processing target substrate are substantially equal to each other when the washing processing is performed after the plasma doping processing.3. A doping apparatus comprising:a processing vessel;a gas supply unit configured to supply a doping gas and an inert gas for plasma excitation to the processing vessel;a holding pedestal disposed within the processing vessel and configured to hold a processing target substrate thereon;a plasma generation mechanism configured to generate plasma within the processing vessel using microwaves; anda controller configured to set a value of bias electric power to a predetermined value on premise of a washing processing to be ...

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Номер записи: 41
11-01-2018 дата публикации

Plasma Processing Apparatus and Plasma Processing Method

Номер: US20180012768A1
Автор: Akio Ul, Itsuko Sakai, Yosuke Sato
Принадлежит: Toshiba Corp

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

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Номер записи: 42
14-01-2021 дата публикации

PLASMA DEVICE USING COAXIAL WAVEGUIDE, AND SUBSTRATE TREATMENT METHOD

Номер: US20210013010A1
Автор: NOZAWA Toshihisa, Yoshikawa Jun
Принадлежит:

Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap. 1. A plasma device , comprising:a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts;a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap; anda conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.2. The plasma device according to claim 1 , whereinthe coaxial waveguide has a microwave introduction part and a plurality of end parts, the plurality of end parts being obtained by branching at the plurality of branch parts; andthe stub is provided at a first branch part, the first branch part being a branch part nearest to the microwave introduction part among the plurality of branch parts.3. The plasma device ...

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Номер записи: 43
14-01-2021 дата публикации

Plasma Spreading Apparatus And System

Номер: US20210013013A1
Автор: McCoy Craig Walter, Moffat William
Принадлежит:

A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching. 1. A plasma etching process chamber , said plasma etching process chamber comprising:a plasma source, said plasma source comprising a first end and a second end, said first end comprising a gas input portion, said plasma source coupled to a process chamber at a second end;a process chamber;a constricting plate adapted to constrict the flow of plasma from said plasma source, said constricting plate at said second end of said plasma source, said constricting plate comprising an annulus;a spreading disc, said spreading disc adapted to spread the flow of plasma after the plasma has flowed through said constricting plate, said spreading disc disposed between said constricting plate and the substrate support, said spreading disc centered below said annulus of said constricting plate;a substrate support, said support adapted to support a substrate in the spread plasma flow, said substrate support residing within said process chamber, said substrate support centered below said spreading disc; anda vacuum system, said vacuum system adapted to evacuate said process chamber.2. The plasma etching process chamber of wherein said plasma source is a linear-inductive plasma source.3. The plasma etching process chamber of wherein said plasma source has a cylindrical plasma chamber.4. The plasma etching process chamber ...

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Номер записи: 44
21-01-2016 дата публикации

PLASMA GENERATING APPARATUS USING DUAL PLASMA SOURCE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

Номер: US20160020070A1
Автор: JOO Chulwon, Kim Hyun Jun, LEE Kyung Min
Принадлежит:

Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.

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Номер записи: 45
19-01-2017 дата публикации

Method for Activating an Inner Surface of a Substrate Tube for the Manufacturing of an Optical-Fiber Preform

Номер: US20170018406A1
Автор: Gerharts Peter, Hartsuiker Johannes Antoon, Krabshuis Gertjan, Milicevic Igor, Van Stralen Mattheus Jacobus Nicolaas
Принадлежит:

A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point. 1. A method for activating an inner surface of a substrate tube for the manufacturing of an optical-fiber preform by means of plasma etching with a fluorine-containing etching gas , the plasma etching comprising the steps of:supplying a supply flow of gas to a central cavity of a substrate tube, wherein the supply flow comprises a main gas flow and a fluorine-containing etching gas flow;inducing a plasma by means of electromagnetic radiation in at least a part of the substrate tube to create a plasma zone in the central cavity of the substrate tube; andmoving the plasma zone back and forth in longitudinal direction over the length of the substrate tube between a reversal point located near the supply side and a reversal point located near the discharge side of the substrate tube;wherein the flow of the fluorine-containing etching gas is provided only when the plasma zone is present between the reversal point near the supply side and a pre-determined axial position located between the reversal point near the supply side and the reversal point near the discharge side.2. The method according to claim 1 , wherein the pre-determined axial position located between the reversal point near the supply side and the ...

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Номер записи: 46
21-01-2016 дата публикации

VARIABLE SHOWERHEAD FLOW BY VARYING INTERNAL BAFFLE CONDUCTANCE

Номер: US20160020074A1
Автор: Hamilton Shawn M., Lorelli Jeffrey E., Madrigal Kevin, Mohn Jonathan D., te Nijenhuis Harald
Принадлежит:

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed. 1. (canceled)2. An apparatus comprising:an outer wall, the outer wall substantially axially symmetric about a first axis;a first inlet;a second inlet; and each sub-volume has a plurality of plenum gas distribution holes passing through a bottom portion of the outer wall,', 'the odd sub-volumes form a first plenum volume,', 'the even sub-volumes form a second plenum volume,', 'the first inlet is configured to supply a first process gas to the odd sub-volumes,', 'the second inlet is configured to supply a second process gas to the even sub-volumes,', 'the first plenum volume is fluidically isolated from the second plenum volume between the plenum gas distribution holes and the first inlet, and', 'the second plenum volume is fluidically isolated from the first plenum volume between the plenum gas distribution holes and the second inlet., 'a dual plenum volume substantially defined by the outer wall, the dual plenum volume divided into an even number of sub-volumes by radial barriers substantially extending from locations proximate to the first axis to the outer wall, wherein3. The apparatus of claim 2 , wherein the sub-volumes are all substantially the same size and overall shape.4. The apparatus of claim 2 , wherein one or more of the sub-volumes is further partitioned into two or more sub-sub-volumes by one or more additional radial barriers and wherein each of the sub-sub-volumes of a sub-volume is configured to be supplied the same process gas.5. The apparatus of claim 2 , further comprising:a first gas feed tube with a first interior volume, and the first ...

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Номер записи: 47
21-01-2016 дата публикации

DATA ANALYSIS METHOD FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20160020123A1
Автор: ASAKURA Ryoji, KAGOSHIMA Akira, SHIRAISHI Daisuke, TAMAKI Kenji
Принадлежит:

A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process. 1. A data analyzing method of an etching apparatus comprising the steps of:generating a wavelength combination from wavelength band of plasma emission generated by etching a specimen;setting a time interval for calculating an average value of emission intensity in a time period for etching the specimen with respect to each of the generated wavelength combinations;calculating a prediction error upon prediction of an etching processing result using the emission intensity average value in the time interval with respect to each of the generated wavelength combinations; andselecting a combination of wavelength and time interval, which exhibits a minimum value of the calculated prediction error, as the combination of wavelength and time interval used for predicting the etching processing result.2. The data analyzing method of an etching apparatus according to claim 1 , wherein in the step of selecting a combination of wavelength and time interval claim 1 , the wavelength combination is specified based on the calculated prediction error claim 1 , a ...

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Номер записи: 48
03-02-2022 дата публикации

SHOWER PLATE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220037117A1
Автор: Hirayama Masaki, IKEDA Taro, Kawakami Satoru
Принадлежит:

In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion. 17-. (canceled)8. A shower plate comprising:an upper dielectric disposed to face a stage; andan upper electrode embedded in the upper dielectric,wherein a distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion of the shower plate than in a central portion of the shower plate.9. The shower plate of claim 8 , wherein the upper electrode includes two or more conductive layers.10. The shower plate of claim 9 , wherein the upper dielectric includes gas ejection holes.11. The shower plate of claim 10 , wherein a radio frequency voltage of 30 to 300 MHz is12. The shower plate of claim 8 , wherein the upper dielectric includes gas ejection holes.13. The shower plate of claim 8 , wherein a radio frequency voltage of 30 to 300 MHz is applied to the upper electrode.14. A plasma processing apparatus comprising a shower plate that comprises an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric claim 8 ,wherein a distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion of the shower plate than in a central portion of the shower plate, a lower dielectric disposed to face the upper dielectric; and', 'a lower electrode embedded in the lower dielectric, and, 'wherein the stage includes a processing container configured to accommodate the shower plate and the stage; and', 'a radio frequency power supply configured to generate plasma in the processing container., ' ...

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Номер записи: 49
22-01-2015 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20150020735A1
Автор: Vandermeulen Peter F.
Принадлежит:

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of slots therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots, said waveguide conduit further comprising secondary slots opposite said plurality of slots;a set of secondary plungers fitted in said secondary slots to amplify radiation emitted through said plurality of slots; andone or more pipes having an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots.2. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are located on a side of the waveguide conduit to allow for the passage of the microwaves in a direction generally perpendicular to the primary axis.3. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are oriented at an angle ranging between 0° and 90° to the primary axis.4. The apparatus of claim 1 , wherein at least some of the pipes convey ...

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Номер записи: 50
18-01-2018 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20180019099A1
Автор: IWAI Tetsuhiro, Okita Shogo
Принадлежит:

A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove. 1. A plasma processing apparatus , comprising:a vessel which comprises a reaction chamber, wherein atmosphere within the reaction chamber is capable of being depressurized;a lower electrode which supports an object to be processed within the reaction chamber;a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; anda coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber,wherein the dielectric member has a groove having an annular shape and formed in the first surface of the dielectric member, andwherein at least a part of the coil is disposed in the groove, andwherein a depth of the groove increases stepwise from an inner circumference of the groove toward an outer circumference of the groove.2. The plasma processing apparatus according to claim 1 ,wherein a center of the groove is substantially overlapped with a center of the coil as viewed from a direction perpendicular to the first surface of the dielectric ...

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Номер записи: 51
18-01-2018 дата публикации

METHOD FOR RF POWER DISTRIBUTION IN A MULTI-ZONE ELECTRODE ARRAY

Номер: US20180019102A1
Автор: RANJAN ALOK, Voronin Sergey
Принадлежит:

Embodiments of systems and methods for RF power distribution in a multi-zone electrode array are described. A system may include a plasma source configured to generate a plasma field. Also, the system may include an RF power source coupled to the plasma source and configured to supply RF power to the plasma source. The system may also include a source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source. 1. A system for plasma processing , comprising:a plasma source configured to generate a plasma field;a Radio Frequency (RF) power source coupled to the plasma source and configured to supply RF power to the plasma source; anda source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source.2. The system of claim 1 , wherein the plasma source further comprises a first electrode assembly and a second electrode assembly.3. The system of claim 2 , wherein the first electrode assembly comprises a plurality of source electrodes.4. The system of claim 2 , wherein the number of source electrodes in the first electrode assembly is in the range of 1 to 100.5. The system of claim 3 , wherein the first electrode assembly is coupled to a first multiplexer.6. The system of claim 5 , wherein the first multiplexer comprise a switch for selectably applying RF power to the each of the plurality of source electrodes in the first electrode assembly independently.7. The system of claim 2 , wherein the second electrode assembly comprises a plurality of source electrodes.8. The system of claim 2 , wherein the number of source electrodes in the second electrode assembly is in the range of 1 to 100.9. The system of claim 7 , wherein the second electrode assembly is coupled to a second multiplexer.10. The system of ...

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Номер записи: 52
18-01-2018 дата публикации

Non-Thermal Soft Plasma Cleaning

Номер: US20180019106A1
Автор: CHAN Chia Sern
Принадлежит:

The present invention provides a Soft Plasma Cleaning (SPC) system () including a Guided Soft-Plasma Cleaning (G-SPC) (). The SPC system is a non-thermal, low temperature process and operable at atmosphere pressure, in both air and liquid medium. In an embodiment, a feedstock gas () is supplied to provide a discharging fluid () in the cleaning chamber (). A plasma guiding and amplifying component () guides and expands the discharging fluid to cover a large ablation area over the workpiece (), thereby also suppressing ion and electron bombardment damage or etching. The plasma guiding and amplifying component () may be formed with dielectric plates or tubes () with each dielectric having an aperture (a). The electric field and ion energy in the cleaning chamber can be additionally controlled via a floating electrode (), so as to suppress plasma damage during SPC. 1. A non-thermal soft plasma cleaning system comprising:a cleaning chamber containing fluid at atmospheric pressure;an electrode disposed in the cleaning chamber, wherein the electrode is connected to a power generator through a power matching unit; anda dielectric member disposed adjacent to the electrode to guide or direct a plasma generated between the electrode and a workpiece to reach the workpiece in a sweeping direction;wherein the workpiece is cleaned by the plasma without causing any plasma damage.2. The non-thermal soft plasma cleaning system according to claim 1 , wherein the dielectric member has an aperture claim 1 , so that the plasma goes through the aperture to reach the workpiece in said sweeping direction.3. The non-thermal soft plasma cleaning system according to claim 1 , wherein the fluid in the cleaning chamber is air or a gas; further comprising a feedstock gas to combine with the plasma into a discharging fluid flow claim 1 , to guide the plasma to the workpiece claim 1 , and to expand a cleaning area claim 1 , so as to with the feedstock gas adding plasma species into the plasma.4. ...

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Номер записи: 53
22-01-2015 дата публикации

ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED COATINGS ON LIDS AND NOZZLES

Номер: US20150021324A1
Автор: Firouzdor Vahid, Kanungo Biraja P., Sun Jennifer Y., ZHANG YING
Принадлежит: Applied Materials, Inc.

A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. 1. A chamber component for an etch reactor comprising:a lid or nozzle comprising a ceramic body; anda protective layer on at least one surface of the ceramic body, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm that has an average surface roughness of below 10 micro-inches.2. The chamber component of claim 1 , wherein the protective layer comprises at least one of YAlO claim 1 , YAlO claim 1 , ErO claim 1 , GdO claim 1 , ErAlO claim 1 , GdAlO claim 1 , YF claim 1 , NdO claim 1 , ErAlO claim 1 , ErAlO claim 1 , GdAlO claim 1 , GdAlO claim 1 , NdAlO claim 1 , NdAlO claim 1 , NdAlO claim 1 , or a ceramic compound comprising YAlOand a solid-solution of YO—ZrO.3. The chamber component of claim 1 , wherein the protective layer has a thickness of 10-30 μm.4. The chamber component of claim 1 , wherein the protective layer comprises a ceramic compound comprising YAlOand a solid-solution of YO—ZrO claim 1 , wherein the ceramic compound has a composition selected from a list consisting of:40-100 mol % of Y2O3, 0-60 mol % of ZrO2, and 0-10 mol % of Al2O3;40-60 mol % of Y2O3, 30-50 mol % of ZrO2, and 10-20 mol % of Al2O3;40-50 mol % of Y2O3, 20-40 mol % of ZrO2, and 20-40 mol % of Al2O3;70-90 mol % of Y2O3, 0-20 mol % of ZrO2, and 10-20 mol % of Al2O3;60-80 mol % of Y2O3, 0-10 mol % of ZrO2, and 20-40 mol % of Al2O3; and40-60 mol % of Y2O3, 0-20 mol % of ZrO2, and 30-40 mol % of Al2O3.5. The chamber component of claim 1 , wherein the protective layer comprises a combination of YO claim 1 , Zr2O3 claim 1 , ErO claim 1 , GdOand SiO.6 ...

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Номер записи: 54
17-01-2019 дата публикации

CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME

Номер: US20190019652A1
Автор: Choi Jaihyuk, Joo Hyunwoo, Jung SukWon, Min Kyungjoo, PARK JONG-HOON, Park Wonwoong
Принадлежит:

A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate. 1. A chemical vapor deposition apparatus comprising:a chamber;a susceptor disposed in the chamber and supporting a substrate having an organic light-emitting diode;a backing plate disposed over the susceptor and spaced apart from the susceptor by a predetermined distance;a diffuser disposed between the backing plate and the susceptor and providing a deposition gas to the substrate; anda first insulator comprising: a first portion covering a top surface of the backing plate; and a second portion assembled with the first portion and covering a sidewall of the backing plate.2. The chemical vapor deposition apparatus of claim 1 , wherein each of the first portion and the second portion includes a plurality of assembled blocks.3. The chemical vapor deposition apparatus of claim 2 , wherein the first portion entirely covers the top surface of the backing plate.4. The chemical vapor deposition apparatus of claim 1 , wherein the first insulator includes at least one of polytetrafluoroethylene (PTFE) claim 1 , polychlorotrifluoroethylene (PCTFE) claim 1 , polyvinylidene fluoride (PVDF) claim 1 , or polyvinyl fluoride (PVF).5. The chemical vapor deposition apparatus of claim 1 , further comprising:a second insulator assembled with the first insulator and connected to the chamber and the diffuser.6. The chemical vapor deposition apparatus of claim 5 , wherein the second insulator has a frame shape exposing the diffuser and includes a plurality of assembled blocks.7. The chemical vapor deposition apparatus of claim 5 , wherein the second insulator includes ceramic and insulates the diffuser ...

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Номер записи: 55
21-01-2021 дата публикации

Variable mode plasma chamber utilizing tunable plasma potential

Номер: US20210020411A1
Автор: Shawming Ma, Stephen E. Savas
Принадлежит: Beijing E Town Semiconductor Technology Co Ltd, Mattson Technology Inc

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.

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Номер записи: 56
28-01-2016 дата публикации

PLASMA CVD DEVICE AND PLASMA CVD METHOD

Номер: US20160024657A1
Автор: Ejiri Hiroe, Nomura Fumiyasu, Sakamoto Keitaro, Tonai Shunpei
Принадлежит: Toray Industries, Inc.

The present invention relates to a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided. 1. A plasma CVD device comprising a plasma CVD electrode unit and a substrate-holding mechanism in a vacuum chamber , wherein the plasma CVD electrode unit comprises:an anode;a cathode facing the anode at a distance; anda first gas supply nozzle supplying a gas through a plasma-generation space between the anode and the cathode,the substrate-holding mechanism being provided at a position to contact the gas passing through the plasma-generation space, wherein a gas-supply directional length of the anode and a gas-supply directional length of the cathode are longer than a distance between the anode and cathode.2. The plasma CVD device according to claim 1 , wherein the cathode has a plasma-generation surface on a side facing to the anode and a magnet inside which forms a magnetron magnetic field on the plasma-generation surface.3. The plasma CVD device according to claim 1 , wherein the cathode is constituted by two or more arrayed metal cylindrical electrodes in the gas-supply direction and a plurality of magnets are inserted inside the metal cylindrical electrode.4. The plasma CVD device according to claim 1 , wherein the ...

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Номер записи: 57
28-01-2016 дата публикации

SYSTEMS AND METHODS FOR ELECTRICAL AND MAGNETIC UNIFORMITY AND SKEW TUNING IN PLASMA PROCESSING REACTORS

Номер: US20160027667A1
Автор: GUNG TZA-JING, Sadjadi S. M. Reza, Silveira Fernando M., WANG Haitao, ZHANG CHUNLEI, ZHOU JIE
Принадлежит:

In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber. 1. A method for at least one of adjusting or controlling process rate uniformity across a substrate within a plasma chamber , comprising:orienting poles or polar equivalents of one or more magnets of a plasma chamber along a plane disposed above and non-orthogonal to a surface of the substrate to reduce one or more processing rate non-uniformities identified during an evaluation phase; andsubsequently operating the plasma chamber to process the substrate.2. The method according to claim 1 , wherein the orienting comprises radially arranging the one or more magnets on a surface of a showerhead disposed opposite the substrate.3. The method according to claim 2 , wherein the one or more magnets are electromagnets claim 2 , and wherein the orienting further comprises energizing less than all of the electromagnets while operating the plasma chamber.4. The method according to claim 3 , wherein the plasma chamber is a twin plasma chamber claim 3 , the method further including:operating a shared vacuum pump coupled to adjacent plasma chambers to reduce a pressure in each ...

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Номер записи: 58
29-01-2015 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20150027637A1
Автор: HAGA Toshio
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode . As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance. 1. A plasma processing apparatus , comprising:a processing container configured to be evacuated;an outer upper electrode installed annularly to face a lower electrode where an object to be processed is placed in the processing container;an inner upper electrode disposed to be insulated inside a radial direction of the outer upper electrode;a processing gas supply unit configured to supply a processing gas to a processing space between the outer upper electrode and the inner upper electrode, and the lower electrode;a first high-frequency power supply configured to output a first high-frequency wave having a frequency suitable for generating plasma of the processing gas;a first power feeding unit provided with a cylindrical conductive member consecutively connected to the outer upper electrode in a circumferential direction and configured to apply the first high-frequency wave from the first high-frequency power supply to the outer upper electrode through the cylindrical conductive member;a second power feeding unit provided with a rod-shaped central conductive member connected to the center of the inner upper electrode, and configured to branch the first high-frequency wave from the first high-frequency power supply from the first power feeding unit to supply the branched-off first high-frequency wave to the inner upper electrode through the central conductive member; anda variable condenser and a variable inductor installed in series to the central ...

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Номер записи: 59
25-01-2018 дата публикации

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Номер: US20180025890A1
Автор: ANWAR Suhail, CHOI Soo Young, HOU LI, Kim Ki Woon, KURITA Shinichi, PARK Beom Soo, TINER Robin L., WANG Qunhua, WHITE John M., WON Tae Kyung
Принадлежит:

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support. 1. A method of depositing a thin film on a substrate , comprising:placing a substrate on a substrate support that is mounted in a processing region of a processing chamber;flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side; andcreating a plasma between the downstream side of the diffuser plate and the substrate support.2. The method of claim 1 , wherein each of the gas passages comprise a hollow cathode cavity in fluid communication with the downstream side.3. The method of claim 2 , wherein a volume claim 2 , a surface area claim 2 , or a density of each of the gas passages varies across the diffuser plate to obtain a desired thin film thickness and property uniformity.4. The method of claim 1 , wherein the diffuser plate is rectangular.5. The method of claim 1 , wherein the diffuser plate size is at least 1 claim 1 ,200 claim 1 ,000 mm.6. The method of claim 1 , wherein each of the gas passages comprise:an orifice hole having a first diameter; anda hollow cathode cavity that is downstream of and in fluid ...

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Номер записи: 60
10-02-2022 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20220044913A1
Автор: Jeon YonJong, Jeong WonKi, Park DongJun
Принадлежит:

A substrate processing apparatus having a simplified exhaust structure includes: a substrate supporting unit configured to support a substrate; a first lid on the substrate supporting unit, the first lid including at least one processing unit; a second lid under the first lid, the second lid including a partition wall; and a support arranged under the first lid and the second lid and including an opening and a seating portion on the opening, wherein the second lid is on the seating portion of the support. 1. A substrate processing apparatus comprising:a substrate supporting unit configured to support a substrate;a first lid on the substrate supporting unit, the first lid comprising at least one processing unit;a second lid under the first lid, the second lid comprising a partition wall; anda support arranged under the first lid and the second lid and comprising an opening and a seating portion on the opening,wherein the second lid is on the seating portion of the support.2. The substrate processing apparatus of claim 1 ,wherein a reaction space is formed between the substrate supporting unit and the processing unit, andan exhaust space is formed between the second lid and the support.3. The substrate processing apparatus of claim 2 ,wherein a first surface of the partition wall defines the reaction space, anda second surface of the partition wall defines the exhaust space.4. The substrate processing apparatus of claim 3 ,wherein the exhaust space is arranged to surround the reaction space,a channel connecting the reaction space and the exhaust space is formed under the partition wall, anda gas in the reaction space is exhausted to the outside through the channel, the exhaust space, and the opening.5. The substrate processing apparatus of claim 1 ,wherein the second lid is detachably fixed to the support.6. The substrate processing apparatus of claim 5 ,wherein the seating portion of the support includes a stepped structure, andthe second lid is arranged to be ...

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Номер записи: 61
28-01-2021 дата публикации

SHOWERHEAD

Номер: US20210027988A1
Автор: Kimura Koichi, MIKUMO Akira, SAKITA Shigenobu
Принадлежит: Sumitomo Electric Industries, Ltd.

A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder includes: a plate-shaped ceramic substrate; a plurality of through holes penetrating the ceramic substrate in the direction of the thickness of the ceramic substrate; and a plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on the side of a surface of the ceramic substrate facing the wafer holder. 1. A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder , comprising:a plate-shaped ceramic substrate;a plurality of through holes penetrating the ceramic substrate in a direction of a thickness of the ceramic substrate; anda plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on a side of a surface of the ceramic substrate facing the wafer holder.2. The showerhead according to claim 1 , wherein the plurality of conductors are embedded in the ceramic substrate at different positions claim 1 , respectively claim 1 , as seen in the direction of the thickness of the ceramic substrate.3. The showerhead according to claim 1 , further comprising: a lead-out circuit embedded in the ceramic substrate at a position different from that of at least one of the plurality of conductors as seen in the direction of the thickness of the ceramic substrate claim 1 , and electrically connected to the at least one conductor; and a terminal portion disposed at a circumferential portion of the ceramic substrate and electrically connected to the at least one conductor via the lead-out circuit.4. The showerhead according to claim 1 , further comprising a resistive claim 1 , heat generating element embedded in the ceramic substrate.5. The showerhead according to claim 4 , wherein the resistive claim 4 , heat generating element is embedded in the ceramic substrate at a position different from that of at least ...

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Номер записи: 62
28-01-2021 дата публикации

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM HAVING THE SAME

Номер: US20210027993A1
Автор: Hong Jungpyo, Kim Hyungjun, KIM Kwangnam, KIM Sungyeon, SUN Jongwoo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor. 1. A substrate treating apparatus , comprising:a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and an insulative body,', 'an antenna disposed on an upper surface of the insulative body,', 'a protection layer disposed on a lower surface of the insulative body, and', 'an etch resistor protruding from at least a portion of the protection layer toward the process space., 'a dielectric window arranged at an upper portion of the process chamber to define a process space, and including2. The substrate treating apparatus of claim 1 , wherein the insulative body includes at least one of alumina (AlO) claim 1 , quartz claim 1 , silicon carbide (SiC) claim 1 , and resin claim 1 , andthe protection layer includes a metal oxide.3. The substrate treating apparatus of claim 2 , wherein the metal oxide includes at least one of yttrium oxide (YO) claim 2 , zirconium oxide (ZrO) claim 2 , manganese oxide (MnO) and yttrium aluminum garnet (YAlO).4. The substrate treating apparatus of claim 1 , wherein a thickness of the etch resistor is in a range of 30% to 50% of a thickness of the protection layer.5. The substrate treating apparatus of ...

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Номер записи: 63
28-01-2021 дата публикации

PLASMA ETCHING METHOD USING FARADAY BOX

Номер: US20210027996A1
Автор: Jang Song Ho, Jo Geun Sik, KANG Soo Hee, KIM Chung Wan
Принадлежит:

A plasma etching method using a Faraday cage which is capable of inhibiting the formation of a needle-like structure and forming a pattern portion having a depth gradient on an etching base. 1. A plasma etching method using a Faraday cage , the plasma etching method comprising:providing an etching base in the Faraday cage, wherein the Faraday cage has a mesh part provided on an upper side of the Faraday cage;shielding at least a part of the mesh part with a shutter; andforming a pattern portion on the etching base by performing plasma etching on the etching base while moving the shutter in a direction from an outer portion of the Faraday cage to a central portion of the Faraday cage to prepare a patterned etching base,wherein a depth of the pattern portion gradually changes in a direction from one side of the etching base to an opposite side of the etching base.2. The plasma etching method of claim 1 , wherein the shutter is moved at a speed that changes in the direction from the outer portion of the Faraday cage to the central portion of the Faraday cage.3. The plasma etching method of claim 1 , wherein the shutter is moved at a speed of 1 mm/min or more and 500 mm/min or less.4. The plasma etching method of claim 1 , wherein a spacing distance between the etching base and the mesh part is 1 mm or more and 35 mm or less.5. The plasma etching method of claim 1 , wherein the plasma etching includes adjusting an ICP power of a plasma etching device to 0.1 kW or more and 4 kW or less and adjusting a RF power of the plasma etching device to 10 W or more and 200 W or less.6. The plasma etching method of claim 1 , wherein the plasma etching includes adjusting an operating pressure of a plasma etching device to 1 mTorr or more and 30 mTorr or less.7. The plasma etching method of claim 1 , wherein the plasma etching includes supplying a gas mixture including a reactive gas and an oxygen gas to a plasma etching device at a flow rate of 10 sccm or more and 200 sccm or less.8. ...

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Номер записи: 64
28-01-2021 дата публикации

APPARATUS AND METHOD FOR TREATING SUBSTRATE

Номер: US20210027997A1
Автор: KIM Sung Yoep, LEE Seok Ro, WI Yeong Hun
Принадлежит:

An apparatus for treating a substrate includes a chamber having a treatment space in which the substrate is treated, a substrate support unit that supports the substrate in the treatment space, a gas supply unit that supplies a gas into the treatment space, an exhaust line connected to the chamber, and a pressure-reducing member that reduces pressure in the exhaust line and releases process by-products generated in the treatment space. The exhaust line includes a first line connected to the chamber, a second line equipped with the pressure-reducing member, and a filter tube that connects the first line and the second line, and the filter tube has a corrugated side surface. 1. An apparatus for treating a substrate , the apparatus comprising:a chamber having a treatment space in which the substrate is treated;a substrate support unit configured to support the substrate in the treatment space;a gas supply unit configured to supply a gas into the treatment space;an exhaust line connected to the chamber; anda pressure-reducing member configured to reduce pressure in the exhaust line and release process by-products generated in the treatment space,wherein the exhaust line includes:a first line connected to the chamber;a second line equipped with the pressure-reducing member; anda filter tube configured to connect the first line and the second line, andwherein the filter tube has a corrugated side surface.2. The apparatus of claim 1 , wherein the filter tube is detachable from the first line and the second line.3. The apparatus of claim 2 , wherein an outer circumferential surface of the filter tube has a corrugated shape claim 2 , andwherein the filter tube has a lower temperature than the first line and the second line.4. The apparatus of claim 3 , wherein temperature outside the filter tube is lower than temperature inside the filter tube claim 3 , andwherein the filter tube is formed of a material having a higher thermal conductivity than the first line and the second ...

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Номер записи: 65
28-01-2021 дата публикации

NANOSECOND PULSER RF ISOLATION

Номер: US20210029815A1
Автор: Bowman Christopher, Liston Connor, Miller Kenneth, Slobodov Ilia, Yang Nicolas A., Ziemba Timothy
Принадлежит:

Some embodiments include a plasma system that includes a plasma chamber; an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MHz; a nanosecond pulser driving pulses into the plasma chamber with a pulse repetition frequency a peak voltage, the pulse repetition frequency being less than the RF frequency and the peak voltage being greater than 2 kV; a first filter disposed between the RF driver and the plasma chamber; and a second filter disposed between the nanosecond pulser and the plasma chamber. 1. A plasma system comprising:a plasma chamber;an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MHz;a nanosecond pulser driving pulses into the plasma chamber with a pulse repetition frequency and a peak voltage, the pulse repetition frequency being less than the RF frequency and the peak voltage being greater than 2 kV;a first filter disposed between the RF driver and the plasma chamber; anda second filter disposed between the nanosecond pulser and the plasma chamber.2. The plasma system according to claim 1 , wherein the pulse repetition frequency is greater than 10 kHz.3. The plasma system according to claim 1 , wherein first filter includes a capacitor in series with the RF driver and the plasma chamber claim 1 , the capacitor includes a capacitance less than about 500 pH.4. The plasma system according to claim 1 , wherein first filter includes an inductor coupled with an output of the RF driver and ground.5. The plasma system according to claim 1 , wherein the second filter includes an inductor in series with the nanosecond pulser and the plasma chamber claim 1 , the inductor having an inductance less than about 50 μH.6. The plasma system according to claim 1 , wherein the second filter includes a capacitor in coupled with an output of the nanosecond pulser and ground.7. The plasma system according to claim 1 , wherein the first filter comprises a high pass filter.8. The plasma system ...

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Номер записи: 66
02-02-2017 дата публикации

Microwave Plasma Source and Plasma Processing Apparatus

Номер: US20170032933A1
Автор: HARA Emiko, Harada Tamotsu, IKEDA Taro
Принадлежит:

There is provided a microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma, including: a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; and a perforated plate provided in a high electric field formation region used as a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces. The perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate, and a function of keeping high a power absorption efficiency of plasma generated in the space. 1. A microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma , comprising:a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; anda perforated plate provided in a high electric field formation region which becomes a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces, the perforated plate having a plurality of holes formed therein, the perforated plate set at a ground potential and made of an electrically conductive material, wherein the perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate and ...

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Номер записи: 67
02-02-2017 дата публикации

GAS DISTRIBUTION APPARATUS IN A VACUUM CHAMBER, COMPRISING A GAS CONDUCTING DEVICE

Номер: US20170032934A1
Автор: DUGGEN Jörg
Принадлежит: BÜHLER ALZENAU GMBH

A gas distribution apparatus in a vacuum chamber includes a gas conducting device that includes at least one gas duct equipped with nozzles from which gas can be distributed into the vacuum chamber, and a gas supplying device which allows gas to be supplied to the gas conducting device. The at least one gas duct is formed by a part designed as a single-piece hollow profile. The part designed as a single-piece hollow profile also forms at least one gas supply channel of the gas supplying device. 116-. (canceled)17. A gas distribution apparatus of a vacuum chamber comprising a gas conducting device having at least one main duct that includes nozzles from which gas can be distributed into the vacuum chamber and comprising a gas supplying device with which gas can be supplied to the gas conducting device , wherein the at least one main duct is formed by a single-piece component designed as a hollow profile , and at least one main gas supply duct of the gas supplying device and at least one tuning duct with tuning duct nozzles from which tuning gas can be distributed into the vacuum chamber is also formed by the single-piece component designed as a hollow profile , wherein the component is designed as an extruded section.18. The gas distribution apparatus of a vacuum chamber comprising a gas conducting device according to claim 17 , wherein at least one tuning gas supply duct is also formed by the single-piece component designed as a hollow profile.19. The gas distribution apparatus according to claim 17 , wherein the at least one tuning duct includes multiple chamber-like segments arranged one after the other along a longitudinal extension of the duct.20. The gas distribution apparatus according to claim 19 , wherein at least two consecutive segments have a common transverse partition wall.21. The gas distribution apparatus according to claim 19 , wherein tuning gas is or can be supplied to each segment via at least one tuning gas supply duct.22. The gas distribution ...

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Номер записи: 68
02-02-2017 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD

Номер: US20170032936A1
Автор: HANAOKA Hidetoshi, Hayami Toshihiro, HINATA Kunihiko, IWATA Manabu, KIBI Kazuo, KOBAYASHI Noriyuki, Koshiishi Akira, KOSHIMIZU Chishio, Matsumoto Naoki, OHTANI Ryuji, Saito Masashi, Sato Manabu, Sugimoto Masaru, Yamazaki Hiroki, Yamazawa Yohei, Yano Daisuke
Принадлежит: TOKYO ELECTRON LIMITED

An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. 1. (canceled)2. A plasma processing apparatus comprising:a process container that forms a process space to accommodate a target substrate;an exhaust unit connected to an exhaust port of the process container to vacuum-exhaust gas from inside the process container;an exhaust plate interposed between the process space and the exhaust port rectify a flow of exhaust gas;a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being an upper electrode and the second electrode being a lower electrode and configured to support the target substrate through a mount face;a first RF power application unit configured to apply a first RF power to the second electrode;a second RF power application unit configured to apply a second RF power to the second electrode;a DC power supply configured to apply a DC voltage to the first electrode;a process gas supply unit configured to supply a process gas into the process container; anda conductive member disposed within the process container and grounded to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, the conductive member being disposed as a ring around the first electrode.3. The plasma processing apparatus according to claim 2 , further comprising a switching mechanism configured to switch from a first state where the conductive member is connected to ...

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Номер записи: 69
02-02-2017 дата публикации

Cold Plasma Annular Array Methods and Apparatus

Номер: US20170032944A1
Автор: Jacofsky Marc C.
Принадлежит: Plasmology4, Inc.

Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits greater tissue penetration by cold plasma treatments. This approach enables treatment of deeper infections of soft and hard tissues without surgical intervention. For example, this approach can treat sub-integumental infections, such as those common to joint replacements, without surgically opening the issues overlying the deeper infection. 1. An apparatus comprising:an annular structure having two or more cold plasma devices positioned to provide converging cold plasma jets that converge at a treatment area, wherein at least one of the two or more cold plasma devices is coupled to one or more harmonic high voltage RF power supplies.2. The apparatus of claim 1 , wherein the two or more cold plasma devices are positioned in a circumferential orientation.3. The apparatus of claim 1 , further configured to include a plurality of port locations claim 1 , wherein the two or more cold plasma devices occupy a subset of the plurality of port locations.4. The apparatus of claim 1 , wherein the annular structure is adjustable claim 1 , the annular structure being further configured to be lockable to ensure a predetermined alignment of the two or more cold plasma devices.5. The apparatus of claim 1 , wherein the two or more cold plasma devices are configured to generate two or more cold plasma jets that are diametrically opposed to one another claim 1 , the treatment area being located between the two or more cold plasma devices.6. The apparatus of claim 1 , wherein the two or more cold plasma devices are coupled to a common triggering mechanism to simultaneously activate the two or more cold plasma devices.7. The apparatus of claim 1 , wherein functionality settings of the two or more cold plasma devices are independently configurable to provide a desired treatment regime at the treatment area.8. The apparatus of ...

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Номер записи: 70
31-01-2019 дата публикации

An apparatus for atomic layer deposition

Номер: US20190032212A1
Автор: Mikko SÖDERLUND, Paavo Timonen, Pekka Soininen
Принадлежит: BENEQ OY

The invention relates to an apparatus for subjecting a surface of a substrate to surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprises a reaction chamber (1) forming a reaction space (2) for receiving precursor gases reacting on the surface of the substrate. The apparatus further comprises a substrate support (3) for holding the substrate; a dielectric plate (4); and an electrode (7) coupled to a voltage source (8) to induce voltage to the electrode (7) for generating electric discharge to the reaction space (2). The dielectric plate (4) is arranged between the substrate support (3) and the electrode (7) and such that the reaction space (2) is arranged between the substrate support (3) and the dielectric plate (4).

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Номер записи: 71
04-02-2016 дата публикации

PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER

Номер: US20160035541A1
Автор: ISHIKAWA MANABU, KOZUKA Shinichi, NIITSUMA Ryosuke
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container. 1. A plasma processing apparatus comprising:a processing container;a support member provided within the processing container and configured to support a processing target substrate; anda gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply hole, the first region, the second region, and the third region being disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate,wherein the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container.2. The plasma processing apparatus of claim 1 , wherein the gas supply hole formed in the third region is disposed at a position outside a position inwardly spaced apart from a periphery of the processing target substrate by 10 mm along the radial direction of the processing target substrate.3. The plasma processing apparatus of claim 1 , wherein the gas supply hole formed in the third region is disposed in a range from a position ...

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Номер записи: 72
04-02-2016 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20160035543A1
Автор: KOBAYASHI Yoshiyuki, NARA TOMOYUKI, Okada Takuya, WATANABE Jun
Принадлежит:

There is provided a plasma processing apparatus including a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The plasma processing apparatus comprises: a chamber for performing a plasma process on a target object; a mounting table configured to mount thereon the target object; and a focus ring configured to surround the target object, the focus ring being in contact with the mounting table via a flexible heat transfer sheet. Further, the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, and the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table. Furthermore, the anti-adhesion layer contains heat conductive particulates, and the heat transfer sheet is formed in an annular shape. 1. A plasma processing apparatus comprising:a chamber for performing a plasma process on a target object;a mounting table configured to mount thereon the target object within the chamber; anda focus ring configured to surround the target object mounted on the mounting table, the focus ring being in contact with the mounting table via a flexible heat transfer sheet,wherein the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, wherein the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table,the anti-adhesion layer contains heat conductive particulates,the heat transfer sheet is formed in an annular shape, andthe anti-adhesion layer is not formed on areas of said contact surface within at least about 1 mm from an inner periphery of the heat transfer sheet toward an outer periphery thereof, and within at least about 1 mm from an outer periphery of the heat transfer sheet toward an inner periphery thereof, ...

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Номер записи: 73
01-02-2018 дата публикации

APPARATUS AND METHOD FOR TREATING SUBSTRATE

Номер: US20180033594A1
Автор: AN JONG HWAN, GU JAMYUNG, GU JUNGMO, Lee Jun Ho, NA SAEWON, NAM SHIN-WOO
Принадлежит:

The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more. 1. A substrate treating apparatus comprising:a process chamber having a treatment space in the interior thereof;a support unit disposed in the process chamber to support a substrate;a gas supply unit configured to supply a process gas into the process chamber; anda plasma generating unit configured to generate plasma from the process gas, wherein the plasma generating unit includes:an upper electrode disposed on the substrate;a lower electrode disposed under the substrate to be vertically opposite to the upper electrode; andthree high frequency power sources configured to apply high frequency power to the lower electrode, andwherein the three high frequency power sources include:a first frequency power source and a second frequency power source having frequencies of 10 MHz or less; anda third frequency power source having a frequency of 10 MHz or more.2. The substrate treating apparatus of claim 1 , wherein the first frequency power source and the second frequency power source have frequencies ranging from 50 KHz to 10 MHz claim 1 , and the third frequency power source has a frequency ranging from 10 MHz to 100 MHz.3. The substrate ...

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Номер записи: 74
01-02-2018 дата публикации

Sub-Pulsing During a State

Номер: US20180033596A1
Автор: JR. John C., Lyndaker Bradford J., Singh Harmeet, Valcore
Принадлежит:

A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal. 1. A method comprising:generating a pulsed signal based on information regarding the pulsed signal, the pulsed signal having sub-states within a first state and having sub-states within a second state, the sub-states of the first state alternating with respect to each other at a frequency greater than a frequency of the first and second states and the sub-states of the second state alternating with respect to each other at a frequency greater than the frequency of the first and second states;providing the pulsed signal to control power of a first radio frequency (RF) signal that is generated by a first RF generator, the power controlled to be synchronous with the pulsed signal; andsupplying the first RF signal having the sub-states of the first state and having the sub-states of the second state to an impedance matching circuit.2. The method of claim 1 , wherein the information regarding the pulsed signal includes the frequency of the sub-states of the first state claim 1 , a duty cycle of the sub-states of the first state claim 1 , a time for which the first state is to occur claim 1 , the frequency of the sub-states of the second state claim 1 , a duty cycle of the sub-states of the second state claim 1 , and a time for which the second state is to occur.3. The method of claim 1 , further comprising receiving the information regarding the pulsed signal from a host computer or a second RF ...

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Номер записи: 75
04-02-2021 дата публикации

METHODS AND APPARATUS FOR DUAL CHANNEL SHOWERHEADS

Номер: US20210032753A1
Автор: Chang Mei, KOPPA Manjunatha P., KURATOMI TAKASHI, Lei Pingyan, PURATHE Vinod Konda, Ravi Jallepally, Wu Dien-Yeh, YUAN XIAOXIONG
Принадлежит:

Methods and apparatus for gas distribution in a process chamber leverage dual electrodes to provide RF power and an RF ground return in a single showerhead. In some embodiments, the apparatus includes a showerhead composed of a non-metallic material with a first gas channel and a second gas channel, the first gas channel and the second gas channel being independent of each other, and the first gas channel including a plurality of through holes from a top surface of the showerhead to a bottom surface of the showerhead and the second gas channel including a plurality of holes on the bottom surface of the showerhead connected to one or more gas inlets on a side of the showerhead, a first electrode embedded in the showerhead near a top surface of the showerhead, and a second electrode embedded in the showerhead near a bottom surface of the showerhead. 1. An apparatus for gas distribution in a process chamber , comprising:a showerhead composed of a non-metallic material with a first gas channel and a second gas channel, wherein the first gas channel and the second gas channel are independent of each other;a first electrode embedded in the showerhead near a top surface of the showerhead; anda second electrode embedded in the showerhead near a bottom surface of the showerhead.2. The apparatus of claim 1 , wherein the showerhead is comprised of a ceramic material.3. The apparatus of claim 2 , wherein the ceramic material is aluminum nitride or aluminum oxide.4. The apparatus of claim 1 , wherein the first electrode is configured to provide a radio frequency (RF) ground return path when installed in the process chamber.5. The apparatus of claim 1 , wherein the second electrode is configured to provide radio frequency (RF) power when installed in the process chamber.6. The apparatus of claim 1 , wherein at least one channel of the first gas channel extends from a first opening in the top surface of the showerhead and through the showerhead to a second opening at the bottom ...

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Номер записи: 76
17-02-2022 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20220051873A1
Автор: Bang Kyeongtea, Kim Hakyoung, Sung Dougyong
Принадлежит:

A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body. 1. A plasma processing apparatus , comprising:a chamber;a support member inside the chamber;a window plate at an upper portion of the chamber and facing the support member, wherein the window plate comprises a window plate body and a fastening hole penetrating the window plate body, wherein the fastening hole comprises a lower fastening hole portion having a first width and an upper fastening hole portion having a second width, greater than the first width; anda gas injector comprising a first body having a plurality of distribution nozzles configured to distribute process gas and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles configured to inject the process gas distributed by the plurality of distribution nozzles into an internal space of the chamber,wherein the second body comprises a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate,wherein the second portion of the second body comprises a gas hole ...

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Номер записи: 77
17-02-2022 дата публикации

Showerhead With Interlaced Gas Feed And Removal And Methods Of Use

Номер: US20220051910A1
Автор: BERA KALLOL, Carducci James, KNYAZIK VLADIMIR, Rauf Shahid, SUBRAMANI ANANTHA K.
Принадлежит: Applied Materials, Inc.

Gas distribution modules comprising a housing with an upper plenum and a lower plenum are described. One of the upper plenum and lower plenum is in fluid communication with an inlet and the other is in fluid communication with an outlet. A plurality of upper passages connects the upper plenum to the bottom of the housing to allow a flow of gas to pass through and be isolated from the first plenum. 1. A processing method comprising:flowing a reactant to a process region, the reactant flowing from a gas source through an inlet connected to an upper plenum to the process region, the upper plenum connected to the process region through a plurality of upper passages extending from the upper plenum through a lower plenum and a bottom of a housing to form a plurality of upper openings in the bottom, the upper passages separated from the lower plenum by an upper passage wall; anddrawing exhaust from the process region, the exhaust flowing through the lower plenum connected to an outlet to a vacuum source, the lower plenum connected to the process region through a plurality of lower passages extending through the bottom to form a plurality of lower openings.2. The method of claim 1 , wherein each of the plurality of upper openings in the bottom is surrounded by three or more of the plurality of lower openings in the bottom and each of the plurality of lower openings in the bottom is surrounded by three or more of the plurality of upper openings.3. The method of claim 1 , wherein the plurality of upper openings is arranged in circular zones alternating with circular zones of the plurality of lower openings.4. The method of claim 1 , wherein at least one of the plurality of lower openings or at least one of the plurality of upper openings surrounds the other of the plurality of lower openings or the plurality of upper openings to form ring shaped openings.5. The method of claim 1 , wherein the plurality of upper openings have a diffusion plate at the bottom of the housing ...

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Номер записи: 78
17-02-2022 дата публикации

SUBSTRATE PROCESSING METHOD

Номер: US20220051935A1
Автор: Choi SeungWoo, Gu YeaHyun, KIM HyunChul, KIM Kihun, Shin WooSik
Принадлежит:

A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap. 1. A substrate processing method comprising:forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle comprising supplying a first reaction gas onto the structure comprising a gap and purging a residue;forming a second thin film by changing a chemical composition of the first thin film; andforming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.2. The substrate processing method of claim 1 , further comprising forming a passivation layer by supplying a thin-film formation inhibitor gas on the second thin film formed in the gap claim 1 , prior to forming the third thin film.3. The substrate processing method of claim 2 , wherein the thin-film formation inhibitor gas is supplied under a pulsed high-frequency power condition.4. The substrate processing method of claim 3 , wherein the passivation layer is formed on a second thin film in an upper portion of the gap.5. The substrate processing method of claim 4 , wherein the passivation layer inhibits the forming of the third thin film on the second thin film in the upper portion of the gap by removing bonding sites on the second thin film that bind to the first reaction gas.6. The substrate processing method of claim 4 , wherein low-frequency power is supplied during the forming of the third thin film.7. The substrate ...

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Номер записи: 79
31-01-2019 дата публикации

SOLID-STATE SOURCE OF ATOMIC SPECIE FOR ETCHING

Номер: US20190035604A1
Автор: RANJAN ALOK, Ventzek Peter
Принадлежит:

An etching system, a solid state source for supplying an atomic specie, and a method of operating are described. The system includes: a processing chamber for treating a substrate in a gas-phase chemical environment; a substrate holder for supporting the substrate in the processing chamber; and a solid state source of an atomic specie coupled to the processing chamber, and configured to supply the atomic specie to the processing chamber when treating the substrate. The processing chamber can facilitate a gas-phase, plasma-containing or non-plasma-containing environment. 1. An etching system , comprising:a processing chamber for treating a substrate in a gas-phase chemical environment;a substrate holder for supporting the substrate in the processing chamber; anda solid state source of an atomic specie coupled to the processing chamber, and configured to supply the atomic specie to the processing chamber when treating the substrate.2. The system of claim 1 , wherein the solid state source includes:a solid state target for supplying the atomic specie; andan ablation mechanism arranged to heat and sublime the solid state target, and form the atomic specie in the gas phase.3. The system of claim 2 , wherein the ablation mechanism includes an electron source claim 2 , or a laser claim 2 , or a combination thereof.4. The system of claim 2 , wherein the solid state source includes a carrier gas supply arranged to supply a carrier gas for flowing the atomic specie into the processing chamber.5. The system of claim 4 , wherein the solid state source includes a controller programmably configured to communicate with the ablation mechanism and the carrier gas supply to control an amount of the atomic specie delivered to the processing chamber.6. The system of claim 2 , wherein the solid state source includes a vacuum pumping system claim 2 , independent of the processing chamber.7. The system of claim 1 , wherein the atomic specie is selected from the group consisting of carbon ...

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Номер записи: 80
31-01-2019 дата публикации

Plasma treatment apparatus, semiconductor manufacturing apparatus, and manufacturing method of semiconductor device

Номер: US20190035636A1
Автор: Fuyuma ITO, Hiroyuki Yasui, Yasuhito Yoshimizu, Yuya Akeboshi
Принадлежит: Toshiba Memory Corp

A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

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Номер записи: 81
12-02-2015 дата публикации

PLASMA PROCESSING CHAMBER WITH REMOVABLE BODY

Номер: US20150041062A1
Автор: Brown Daniel A., Kellogg Michael C.
Принадлежит: LAM RESEARCH CORPORATION

An apparatus for plasma processing a wafer is provided. A bottom plate is provided. A tubular chamber wall with a wafer aperture is adjacent to the bottom plate. A bottom removable seal provides a vacuum seal between the bottom plate and the tubular chamber wall at a first end of the tubular wall. A top plate is adjacent to the tubular chamber wall. A top removable seal provides a vacuum seal between a second end of the tubular wall and the top plate. A vertical seal is provided, where a vertical movement of the tubular wall allows the vertical seal to create a seal around the wafer aperture. A bottom alignment guide aligns the tubular chamber wall with the bottom plate. A top alignment guide aligns the top plate with the tubular chamber wall. A wafer chuck is disposed between the bottom plate and the top plate. 1. An apparatus for plasma processing a wafer , comprising:a bottom plate;a tubular chamber wall with a wafer aperture;a bottom removable seal for providing a vacuum seal between the bottom plate and the tubular chamber wall at a first end of the tubular wall;a top plate;a top removable seal for providing a vacuum seal between a second end of the tubular wall and the top plate;a vertical seal, wherein a vertical movement of the tubular wall allows the vertical seal to create a seal around the wafer aperture;a bottom alignment guide for aligning the tubular chamber wall with the bottom plate;a top alignment guide for aligning the top plate with the tubular chamber wall; anda wafer chuck disposed between the bottom plate and the top plate.2. An apparatus for plasma processing a wafer , comprising:a bottom plate;a tubular chamber wall;a bottom removable seal for providing a vacuum seal between the bottom plate and the tubular chamber wall at a first end of the tubular wall;a top plate;a top removable seal for providing a vacuum seal between a second end of the tubular wall and the top plate; anda wafer chuck disposed between the bottom plate and the top plate.3 ...

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Номер записи: 82
04-02-2021 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20210035784A1
Автор: YAHATA Takashi
Принадлежит: KOKUSAI ELECTRIC CORPORATION

There is provided a technique that include: a process chamber including a plasma generation space and a process space; a coil electrode arranged around the plasma generation space; a substrate mounting table on which a substrate to be processed in the process space is mounted; an elevator configured to move the substrate mounting table in the process chamber; and a controller configured to control the elevator to vary a distance between the substrate and an end portion of the coil electrode according to process distribution information on the substrate. 1. A substrate processing apparatus comprising:a process chamber including a plasma generation space and a process space;a coil electrode arranged around the plasma generation space;a substrate mounting table on which a substrate to be processed in the process space is mounted;an elevator configured to move the substrate mounting table in the process chamber; anda controller configured to control the elevator to vary a distance between the substrate and an end portion of the coil electrode according to process distribution information on the substrate.2. The substrate processing apparatus of claim 1 , wherein in a case where the process distribution information is a convex process distribution claim 1 , the controller is configured to set the distance between the substrate and the end portion of the coil electrode to be smaller than a predetermined distance when a slope of the convex process distribution is larger than a predetermined threshold value claim 1 , and set the distance between the substrate and the end portion of the coil electrode to be larger than the predetermined distance when the slope of the convex process distribution is smaller than the predetermined threshold value.3. The substrate processing apparatus of claim 2 , wherein the controller is further configured to set the distance between the substrate and the end portion of the coil electrode to be the predetermined distance when the process ...

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Номер записи: 83
11-02-2016 дата публикации

POST-CHAMBER ABATEMENT USING UPSTREAM PLASMA SOURCES

Номер: US20160042916A1
Автор: Wang Rongping
Принадлежит:

Embodiments of the disclosure relate to a remote plasma source for cleaning an exhaust pipe. In one embodiment, an apparatus includes a substrate processing chamber, a pump positioned to evacuate the substrate processing chamber, and an abatement system. The abatement system comprises a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump, a reactor body connected to the gas delivery system through a delivery member, a cleaning gas source connected to the reactor body, and a power source positioned to ionize within the reactor body a cleaning gas from the cleaning gas source. Radicals and species of the cleaning gas react with post-process gases from the substrate processing chamber to convert them into a environmentally and process equipment friendly composition before entering the pump. 1. An apparatus , comprising:a substrate processing chamber having a substrate support disposed therein;a pump positioned to evacuate the substrate processing chamber; and a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump;', 'a reactor body connected to the plasma gas delivery system through a delivery member, the reactor body defining a plasma excitation region therein;', 'a cleaning gas source connected to the reactor body; and', 'a power source positioned to ionize within the plasma excitation region a cleaning gas from the cleaning gas source., 'an abatement system, comprising2. The apparatus of claim 1 , wherein the reactor body is an inductively coupled plasma (ICP) chamber claim 1 , a capacitively coupled plasma (CCP) chamber claim 1 , a microwave induced (MW) plasma chamber claim 1 , an electron cyclotron resonance (ECR) chamber claim 1 , a ...

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Номер записи: 84
11-02-2016 дата публикации

Etching method of multilayered film

Номер: US20160042918A1
Автор: Ryuuu ISHITA, Yusuke Saitoh
Принадлежит: Tokyo Electron Ltd

Verticality of a space formed in the multilayered film can be improved while suppressing an opening of a mask from being clogged. The multilayered film includes a first film and a second film that have different permittivities and are alternately stacked on top of each other. An etching method of etching the multilayered film includes preparing, within a processing vessel of a plasma processing apparatus, a processing target object having the multilayered film and a mask provided on the multilayered film; and etching the multilayered film by exciting a processing gas containing a hydrogen gas, a hydrofluorocarbon gas, a fluorine-containing gas, a hydrocarbon gas, a boron trichloride gas and a nitrogen gas within the processing vessel.

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Номер записи: 85
11-02-2016 дата публикации

ETCHING METHOD OF MULTILAYERED FILM

Номер: US20160042919A1
Автор: ISHITA Ryuuu, Saitoh Yusuke
Принадлежит:

An etching method of etching a multilayered film includes etching a multilayered film by generating plasma within a processing vessel of a plasma processing apparatus. In the etching of the multilayered film, a first processing gas containing a hydrogen gas, a hydrogen bromide gas, a fluorine-containing gas, a hydrocarbon gas, a hydrofluorocarbon gas and a fluorocarbon gas is supplied from a first supply unit configured to supply a gas toward a central region of the processing target object and a second supply unit configured to supply a gas toward outer region than the central region; a second processing gas containing a hydrocarbon gas and a fluorocarbon gas is supplied from either one of the first supply unit and the second supply unit; and the first processing gas and the second processing gas are excited. 1. An etching method of etching a multilayered film including a first film and a second film that have different permittivities and are alternately stacked on top of each other , the etching method comprising:preparing, within a processing vessel of a plasma processing apparatus, a processing target object having the multilayered film and a mask formed on the multilayered film; andetching the multilayered film by generating plasma within the processing vessel of the plasma processing apparatus,wherein in the etching of the multilayered film, a first processing gas containing a hydrogen gas, a hydrogen bromide gas, a fluorine-containing gas, a hydrocarbon gas, a hydrofluorocarbon gas and a fluorocarbon gas is supplied from a first supply unit configured to supply a gas toward a central region of the processing target object and a second supply unit configured to supply a gas toward outer region than the central region; a second processing gas containing a hydrocarbon gas and a fluorocarbon gas is supplied from either one of the first supply unit and the second supply unit; and the first processing gas and the second processing gas are excited.2. The etching ...

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Номер записи: 86
11-02-2016 дата публикации

Grooved insulator to reduce leakage current

Номер: US20160042920A1
Автор: Dmitry Lubomirsky, Dongqing Yang, Nicholas Celeste, Peter Hillman, Raymond W. Lu, Sang Won Kang, Soonam Park, Tae Cho, Tien Fak Tan
Принадлежит: Applied Materials Inc

A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

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Номер записи: 87
11-02-2016 дата публикации

LOW-K DIELECTRIC FILM FORMATION

Номер: US20160042943A1
Автор: ANTONELLI George Andrew, Ribaudo Troy Daniel
Принадлежит:

Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation. 1. A method comprising:providing a precursor film including a dielectric matrix and a porogen;exposing the precursor film to a downstream plasma generated from a process gas including a reducing agent and a weak oxidizer to thereby remove porogen and form a porous dielectric film.2. The method of claim 1 , further comprising exposing the porous dielectric film to UV radiation to thereby increase cross-linking.3. The method of claim 2 , wherein exposing the porous dielectric film to UV radiation comprises exposing the porous dielectric film to a first emission spectrum and then exposing the porous dielectric film to a second emission spectrum claim 2 , wherein the first and second emission spectra are different.4. The method of claim 1 , wherein the plasma is generated by an inductively-coupled plasma generator.5. The method of claim 1 , wherein the weak oxidizer is selected from carbon dioxide claim 1 , water claim 1 , methanol claim 1 , ethanol claim 1 , isopropyl alcohol claim 1 , and combinations thereof.6. The method of claim 1 , wherein the reducing agent is selected from molecular hydrogen claim 1 , ammonia claim 1 , acetic acid claim 1 , formic acid claim 1 , and combinations thereof.7. The method of claim 1 , wherein a ...

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Номер записи: 88
09-02-2017 дата публикации

Systems and Methods for Separately Applying Charged Plasma Constituents and Ultraviolet Light in a Mixed Mode Processing Operation

Номер: US20170040170A1
Автор: Eppler Aaron, GUHA Joydeep
Принадлежит:

A processing volume is formed within an interior of a chamber between a top surface of a substrate support and a top dielectric window. An upper portion of the processing volume is a plasma generation volume. A lower portion of the processing volume is a reaction volume. A coil antennae is disposed above the dielectric window and connected to receive RF power. A process gas input is positioned to supply a process gas to the plasma generation volume. A series of magnets is disposed around a radial periphery of the chamber at a location below the top dielectric window. The series of magnets is configured to generate magnetic fields that extend across the processing volume. The series of magnets is positioned relative to the plasma generation volume such that at least a portion of the magnetic fields generated by the series of magnets is located below the plasma generation volume. 1. A system for plasma processing , comprising:a chamber having an exterior structure including one or more side walls, a bottom structure, and a top dielectric window;a substrate support structure disposed within an interior of the chamber, the substrate support structure having a top surface configured to support a substrate, a processing volume formed within the interior of the chamber between the top surface of the substrate support and the top dielectric window, an upper portion of the processing volume being a plasma generation volume, a lower portion of the processing volume being a reaction volume;a coil antennae disposed above the dielectric window;a radiofrequency (RF) power source connected to supply RF power to the coil antennae;a process gas input positioned above the substrate processing volume;a process gas supply plumbed to supply process gas to the process gas input and into the plasma generation volume; anda series of magnets disposed around a radial periphery of the chamber at a location below the top dielectric window, the series of magnets configured to generate magnetic ...

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Номер записи: 89
08-02-2018 дата публикации

SURFACE TREATMENT FOR IMPROVEMENT OF PARTICLE PERFORMANCE

Номер: US20180040457A1
Автор: Wu Banqiu
Принадлежит: Applied Materials, Inc.

Implementations of the disclosure provide a surface treatment process for chamber components. In one implementation, the chamber component includes a crystalline body comprising machined surfaces including at least a reflowed surface layer formed in a plasma treatment chamber by placing the body on a pedestal disposed within the plasma chamber, maintaining a pressure in the plasma chamber at 0.1-100 mTorr, flowing a gas into the plasma chamber at a flow rate of 10-500 sccm, applying an RF power to an inductive coil of the plasma chamber to form a plasma from the gas in the plasma chamber, the RF power of 300 Watts is applied at a frequency of 10 kHz to 160 MHz, and applying an RF bias power of 100 Watts at a frequency of 10 kHz to 160 MHz to the pedestal to bombard the body with ions from the plasma for 10-100 hours. 1. A component for use in a process chamber , comprising: placing the body on a pedestal disposed within the plasma chamber;', 'maintaining a pressure in the plasma chamber at 0.5 mTorr to 100 mTorr;', 'flowing a gas into the plasma chamber at a flow rate of 10 sccm to 500 sccm;', 'applying an RF power to an inductive coil of the plasma chamber to form a plasma from the gas in the plasma chamber, wherein the RF power is applied on the range of 300 Watts at a frequency of 10 kHz to 160 MHz; and, 'a crystalline body comprising machined surfaces facing a processing region of the process chamber, wherein the machined surfaces comprises at least a reflowed surface layer formed in a plasma treatment chamber bywhile applying the RF power to the inductive coil, applying an RF bias power to the pedestal to bombard the body with ions from the plasma, wherein the RF bias power is applied on the range of 30 to 500 Watts at a frequency of 10 kHz to 160 MHz, and the body is bombarded with ions for about 10 hours to about 100 hours.2. The component of claim 1 , wherein the crystalline body is a shield claim 1 , a showerhead claim 1 , a chamber lid claim 1 , a ring ...

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Номер записи: 90
08-02-2018 дата публикации

SYSTEMS AND METHODS OF TREATING A SUBSTRATE

Номер: US20180040458A1
Автор: Kim Hyung Joon, Moon HyungChul
Принадлежит: Semes Co., Ltd

Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner. 1. A method of treating a substrate , comprising:a processing step of supplying a process gas into a processing space of a chamber to treat a substrate loaded on a supporting plate; anda waiting step of waiting for loading of the substrate in the processing space of the chamber,wherein an inner liner provided to enclose the supporting plate is positioned at a first position in the processing step and at a second position lower than the first position in the waiting step.2. The method of claim 1 , further comprising a cleaning step for removing by-products from a space between a focus ring enclosing the supporting plate and the supporting plate claim 1 , between the processing step and the waiting step claim 1 ,wherein in the cleaning step, the inner liner is positioned at a third position lower than the first position and higher than the second position.3. The method of claim 1 , wherein claim 1 , in the processing step claim 1 , the process gas is supplied to a main nozzle provided through a wall of the chamber and to an auxiliary nozzle provided through the inner liner.4. The method of claim 3 , wherein claim 3 , in the processing step claim 3 , amounts of the process gas supplied to the main nozzle and the auxiliary nozzle are substantially the same.5. The method of claim 2 , wherein claim 2 , in the cleaning step claim 2 , the cleaning gas is supplied to an auxiliary nozzle provided through ...

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Номер записи: 91
24-02-2022 дата публикации

Generation of Hydrogen Reactive Species For Processing of Workpieces

Номер: US20220059321A1
Автор: Chung Hua, Lu Xinliang, Yang Michael X., ZHANG Qi
Принадлежит:

Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals. 118-. (canceled)19. A method for processing a workpiece , the method comprising:generating one or more species in an inert gas in a first chamber;filtering one or more ions in the first chamber using a separation grid to generate a filtered mixture;injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals;exposing the workpiece to the one or more hydrogen radicals in a second chamber, the second chamber being separated from the first chamber by the separation grid.20. (canceled)21. The method of claim 19 , wherein injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals comprises mixing hydrogen gas with neutral species passing through the separation grid.22. The method of claim 19 , wherein injecting a hydrogen gas downstream of the first chamber into the filtered mixture to generate one or more hydrogen radicals comprises mixing hydrogen gas with neutral species in the separation grid.23. The method of claim 19 , wherein the inert gas comprises helium.24. The method of claim 19 , wherein the plasma is generated using an inductively coupled plasma source.25. The method of claim 19 , wherein exposing the workpiece in the second chamber to the one or more hydrogen radicals at least partially removes a photoresist layer on the workpiece.26. The method of claim 19 , wherein exposing the workpiece in a processing chamber to the one or more ...

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Номер записи: 92
24-02-2022 дата публикации

METHOD AND APPARATUS FOR ATOMIC LAYER ETCHING

Номер: US20220059325A1
Автор: AN Jong Ki, CHO Byung Chul, HAN Tian Hao, JIN Kwang Seon, KWON Jun Hyuck, PARK Sang Jun
Принадлежит: WONIK IPS CO., LTD.

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate. 1. A method for atomic layer etching comprising:a step of providing a substrate on which a material to be etched is formed;a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate; andan etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.2. The method for atomic layer etching according to claim 1 , wherein claim 1 , in the modifying step claim 1 , the modifying gas is radicalized by is plasma and supplied.3. The method for atomic layer etching according to claim 2 , wherein claim 2 , when the modifying gas radicalized by the plasma is supplied claim 2 , a temperature of the substrate is set to 150° C. or less.4. The method for atomic layer etching according to claim 1 , wherein claim 1 , in the etching step claim 1 , the etching gas is radicalized by plasma and supplied.5. The method for atomic layer etching according to wherein claim 3 , when the etching gas radicalized by the plasma is supplied claim 3 , a temperature of the substrate is set to 150° C. or less.6. The method for atomic layer etching according to claim 1 , wherein the material to be etched is a metal oxide film and the second temperature is set to a temperature higher than the first temperature.7. The method for atomic layer etching according to claim 1 , wherein ...

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Номер записи: 93
18-02-2016 дата публикации

NOZZLE FOR UNIFORM PLASMA PROCESSING

Номер: US20160047040A1
Автор: Bhesetti Siva Suri Chandra Rao, MISHRA Rohit, Peh Eng Sheng, Sun Cheng, THIRUNAVUKARASU SRISKANTHARAJAH, VAYYAPRON SHOJU
Принадлежит:

A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis. 1. A nozzle for uniform plasma processing comprising:an inlet portion comprising a plurality of gas channels, the inlet portion having a side surface substantially parallel to a vertical axis; andan outlet portion coupled to the inlet portion, wherein the outlet portion comprises a plurality of outlets, wherein at least one of the outlets is at an angle other than a right angle relative to the vertical axis.2. The nozzle of claim 1 , wherein at least one of the gas channels extends at an angle relative to the vertical axis.3. The nozzle of claim 1 , further comprisinga cavity between the inlet portion and the outlet portion.4. The nozzle of claim 1 , wherein the outlet portion has one of a convex shape and a concave shape.5. The nozzle of claim 1 , wherein the number of outlets is greater than the number of gas channels.6. The nozzle of claim 1 , wherein the outlet portion comprises at least one step.7. The nozzle of claim 1 , wherein the outlet portion comprises a side surface that extends at an angle to the vertical axis.8. A plasma processing system comprising:a processing chamber comprising a pedestal to hold a workpiece comprising a substrate;a plasma source;a nozzle coupled to the plasma source to receive a gas to generate plasma in the processing chamber, wherein the nozzle comprises an inlet portion comprising a plurality of gas channels, the inlet portion comprises a side surface substantially parallel to a vertical axis, and an outlet portion coupled to the inlet portion, the outlet portion comprising a plurality of outlets, wherein ...

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Номер записи: 94
07-02-2019 дата публикации

SUBSTRATE TREATING APPARATUS AND INSPECTION METHOD

Номер: US20190043699A1
Автор: CHO Jae Hwan, Kim Hyung Joon
Принадлежит:

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit located in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the interior of the process chamber, a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space, and an inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head. 1. A substrate treating apparatus comprising:a process chamber having a treatment space in the interior thereof;a support unit located in the process chamber to support a substrate;a gas supply unit configured to supply a process gas into the interior of the process chamber;a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space; andan inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head.2. The substrate treating apparatus of claim 1 , wherein the inspection unit includes:the optical fiber disposed between the upper electrode and the shower head;a light source configured to irradiate light to the optical fiber; anda measurement unit configured to monitor the coupling state of the shower head and the upper electrode by detecting the light that passed through the optical fiber.3. The substrate treating apparatus of claim 2 , wherein the measurement unit calculates a phase change of the light claim 2 , and determines the coupling state of the shower head and the upper ...

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Номер записи: 95
07-02-2019 дата публикации

INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCH CHAMBER AND IN-SITU ETCH-ALP METHOD

Номер: US20190043728A1
Автор: Drewery John, Kamp Tom A., Kimura Yoshie, Paterson Alex, Xu Chen, Zhang Duming, Zhou Xiang
Принадлежит:

A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described. 1. A method for etching a substrate in a plasma chamber , comprising ,receiving the substrate in the plasma chamber over a bottom electrode, the substrate having a material to be etched to form features, with a mask being provided over the substrate to define locations of the features to be etched;performing, in the plasma chamber, a first etch of the material using a plasma etch process, the first etch using plasma etch gases to form features to a first depth in the material; (a) introducing a vapor of a liquid precursor into the plasma chamber to coat an amount of precursor over the mask and the features;', '(b) curing the amount of precursor to form an atomic monolayer of said conformal layer of passivation; and', '(c) repeating the introducing of the vapor of the liquid precursor in (a) and the curing of the amount of precursor in (b) until a conformal film of passivation having a target thickness is formed without removal of the substrate from the plasma chamber; and, 'performing, in the plasma chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask ...

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Номер записи: 96
06-02-2020 дата публикации

CHAMBER LINER

Номер: US20200043706A1
Автор: CHOI Soo Young, FURUTA Gaku, LAU Allen K., Li Jianheng, TINER Robin L., ZHAO Lai
Принадлежит:

Embodiments described herein generally relate to apparatus and methods for processing a substrate utilizing a high radio frequency (RF) power. The high RF power enables deposition of films on the substrate with more desirable properties. A first plurality of insulating members is disposed on a plurality of brackets and extends laterally inward from a chamber body. A second plurality of insulating members is disposed on the chamber body and extends from the first plurality of insulating members to a support surface of the chamber body. The insulating members reduce the occurrence of arcing between the plasma and the chamber body. 1. An apparatus , comprising:a chamber body defining a process volume, the chamber body having a support surface formed therein;a lid coupled to the chamber body;a showerhead disposed within the process volume;a plurality of brackets coupled to and extending laterally inward from the chamber body;a support pedestal disposed within the process volume opposite the showerhead;a first plurality of insulating members disposed on the plurality of brackets and extending laterally inward from the chamber body; anda second plurality of insulating members disposed on the chamber body, each insulating member of the second plurality of insulating members extending from the first plurality of insulating members to the support surface of the chamber body.2. The apparatus of claim 1 , wherein each bracket of the plurality of brackets comprises an aluminum material.3. The apparatus of claim 1 , wherein each insulating member of the first plurality of insulating members and each insulating member of the second plurality of insulating members comprise a ceramic material.4. The apparatus of claim 1 , wherein each insulating member of the first plurality of insulating members and each insulating member of the second plurality of insulating members comprise a polymer material.5. The apparatus of claim 1 , wherein the second plurality of insulating members is ...

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Номер записи: 97
18-02-2021 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20210050182A1
Автор: KANG Ho Chul
Принадлежит:

A substrate processing apparatus includes: a gas injection portion including two gas distribution portions, disposed on an upper portion in the chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other; a first electrode, connected to a radio-frequency (RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; and a second electrode, disposed to oppose the first electrode, mounting a substrate. 1. A substrate processing apparatus comprising:a gas injection portion including two gas distribution portions, disposed on an upper portion in a chamber and spatially separated from each other, and two types of nozzles, respectively connected to the two gas distribution portions, having different lengths to each other;a first electrode, connected to a radio-frequency RF) power supply and disposed below the gas injection portion to be vertically spaced apart from the gas injection portion, having a plurality of openings into which among the nozzles, one type of nozzles are respectively inserted; anda second electrode, disposed to oppose the first electrode, mounting a substrate,wherein the gas distribution portion is grounded.2. The substrate processing apparatus as set forth in claim 1 , wherein the two gas distribution portions are separated into a first gas distribution portion claim 1 , disposed in a space on an upper end of the gas distribution portion claim 1 , and a second gas distribution portion disposed below the first gas distribution portion claim 1 , andthe nozzles includes first nozzles, communicating with a gas buffer space of the first gas distribution portion, and second nozzles communicating with flow paths of the second gas distribution portion.3. The substrate processing ...

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Номер записи: 98
18-02-2021 дата публикации

THREE-PHASE PULSING SYSTEMS AND METHODS FOR PLASMA PROCESSING

Номер: US20210050183A1
Автор: OHATA Mitsunori, RANJAN ALOK, Ventzek Peter
Принадлежит:

A method of plasma processing includes performing a reactive species control phase, performing an ion/radical control phase, and performing a by-product control phase. The reactive species control phase includes pulsing source power to a processing chamber to generate ions and radicals in a plasma. The ion/radical control phase is performed after the reactive species control phase. The ion/radical control phase includes reducing the source power to the processing chamber and pulsing bias power to a substrate in the processing chamber. The by-product control phase is performed after the ion/radical control phase. The by-product control phase includes reducing the source power to the processing chamber relative to the reactive species control phase and reducing the bias power to the substrate relative to the ion/radical control phase. 1. A method of plasma processing , the method comprising:performing a reactive species control phase comprising pulsing source power to a processing chamber to generate ions and radicals in a plasma;performing an ion/radical control phase after the reactive species control phase, the ion/radical control phase comprising reducing the source power to the processing chamber and pulsing bias power to a substrate in the processing chamber; andperforming a by-product control phase after the ion/radical control phase, the by-product control phase comprising reducing the source power to the processing chamber relative to the reactive species control phase and reducing the bias power to the substrate relative to the ion/radical control phase.2. The method of claim 1 , further comprising:cyclically performing the reactive species control phase, the ion/radical control phase, and the by-product control phase.3. The method of claim 1 , further comprising:providing a gas to the processing chamber, wherein a flowrate of the gas is substantially constant during the reactive species control phase, the ion/radical control phase, and the by-product ...

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Номер записи: 99
18-02-2021 дата публикации

Microwave Plasma Source For Spatial Plasma Enhanced Atomic Layer Deposition (PE-ALD) Processing Tool

Номер: US20210050187A1
Автор: BERA KALLOL, Dzilno Dmitry A., FORSTER John C., Garachtchenko Alexander V., KUDELA Jozef, LI Xiaopu, Shervegar Avinash, SUBRAMANI ANANTHA K., Tanaka Tsutomu
Принадлежит: Applied Materials, Inc.

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed. 1. A plasma source assembly comprising:a powered electrode having a first end and a second end defining a length and having an elongate axis extending along the length of the powered electrode, the powered electrode having a thickness and width;a ground electrode on a first side of the powered electrode, the ground electrode spaced from the powered electrode by a distance;a dielectric on a second side of the powered electrode, the dielectric and ground electrode enclosing the powered electrode, the dielectric having an inner face adjacent the powered electrode and an outer face opposite the inner face;a first microwave generator electrically coupled to the first end of the powered electrode through a first feed; anda second microwave generator electrically coupled to the second end of the powered electrode through a second feed.2. The plasma source assembly of claim 1 , wherein the ground electrode is spaced from the powered electrode by a second dielectric.3. The plasma source assembly of claim 1 , wherein the powered electrode is a flat conductor.4. The plasma source assembly of claim 1 , wherein one or more of the width of the powered electrode changes from the first end to the second end claim 1 , the distance from powered electrode to the ground electrode changes from first end to second end; or a distance from powered electrode to the outer face of the dielectric changes from first end to the second end.5. The plasma source assembly of claim 4 , ...

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Номер записи: 100