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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 16825. Отображено 103.
27-11-1997 дата публикации

Номер: KR0100131216B1
Автор:
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23-02-1996 дата публикации

Номер: KR19960006100A
Автор:
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20-12-2011 дата публикации

Image sensor and manufacturing method of image sensor

Номер: US0008080840B2
Автор: Jong Man Kim, KIM JONG MAN

Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

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05-01-2012 дата публикации

CIGS Solar Cell and Method for Manufacturing thereof

Номер: US20120000531A1
Автор: Yan-Way LI
Принадлежит: GCSOL Tech CO Ltd

A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.

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05-02-2020 дата публикации

Полупроводниковый приемник инфракрасного излучения

Номер: RU0000195799U1

Полупроводниковый приемник инфракрасного (ИК) излучения содержит полупроводниковую подложку (1) AIIIBV с первой активной областью (2) на основе гетероструктуры, выполненной из твердых растворов AIIIBV, первый омический контакт (4), нанесенный на поверхность (3) активной области (2), и второй омический контакт (7), нанесенный на поверхность (6) периферийной области полупроводниковой подложки (1), противолежащей поверхности с первой активной областью (2). Вокруг первой активной области (2) на полупроводниковой подложке(1) выполнена вторая кольцевая активная область (8) на основе гетероструктуры, выполненной из твердых растворов AIIIBV, электрически отделенная от первой активной области (2). На активную область (8) нанесен третий омический контакт (10). В полупроводниковом приемнике ИК излучения обеспечена возможность проверки его работоспособности в любой момент времени. 6 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 195 799 U1 (51) МПК H01L 31/0304 (2006.01) H01L 31/09 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/0304 (2019.08); H01L 31/09 (2019.08) (21)(22) Заявка: 2019127110, 27.08.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): Общество с ограниченной ответственностью "АИБИ" (RU) 05.02.2020 (45) Опубликовано: 05.02.2020 Бюл. № 4 1 9 5 7 9 9 R U (54) ПОЛУПРОВОДНИКОВЫЙ ПРИЕМНИК ИНФРАКРАСНОГО ИЗЛУЧЕНИЯ (57) Реферат: Полупроводниковый приемник областью (2). Вокруг первой активной области инфракрасного (ИК) излучения содержит (2) на полупроводниковой подложке(1) полупроводниковую подложку (1) AIIIBV с выполнена вторая кольцевая активная область первой активной областью (2) на основе (8) на основе гетероструктуры, выполненной из гетероструктуры, выполненной из твердых твердых растворов AIIIBV, электрически растворов AIIIBV, первый омический контакт (4), отделенная от первой активной области (2). На нанесенный на поверхность (3) ...

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26-01-2012 дата публикации

Buffer layer formation

Номер: US20120017983A1
Автор: Markus E. Beck
Принадлежит: Individual

Manufacturing a photovoltaic device can include a vapor transport deposition process.

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26-01-2012 дата публикации

Articles comprising phyllosilicate composites containing mica

Номер: US20120017992A1
Автор: Kostantinos Kourtakis
Принадлежит: EI Du Pont de Nemours and Co

Disclosed is a mica paper composite and a process for making the mica paper composite. Articles comprising the mica paper composite are also disclosed.

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02-02-2012 дата публикации

Integrated circuit combination of a target integrated circuit and a plurality of cells connected thereto using the top conductive layer

Номер: US20120025342A1
Принадлежит: SOL CHIP Ltd

A target integrated circuit (TIC) having a top conductive layer (TCL) that may be connected to a plurality of cells that are further integrated over the TIC. Each of the plurality of cells comprises two conductive layers, a lower conductive layer (LCL) below the cell and an upper conductive layer (UCL) above the cell. Both conductive layers may connect to the TCL of the TIC to form a super IC structure combined of the TIC and the plurality of cells connected thereto. Accordingly, conductivity between the TIC as well as auxiliary circuitry to the TIC maybe achieved.

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02-02-2012 дата публикации

Hybrid photovoltaic cells and related methods

Номер: US20120028406A1
Принадлежит: Nanoco Technologies Ltd

Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split.

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09-02-2012 дата публикации

Nanoparticle Plasmon Scattering Layer for Photovoltaic Cells

Номер: US20120031486A1
Принадлежит: Nanosys Inc

The present invention relates to nanoparticle compositions for use in photovoltaic cells. Nanoparticles are utilized to provide increased scattering and also wavelength shifting to increase the efficiency of the photovoltaic cells. Exemplary nanoparticles include colloidal metal and fluorescent nanoparticles.

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09-02-2012 дата публикации

Buffer layer deposition for thin-film solar cells

Номер: US20120034726A1
Принадлежит: Global Solar Energy Inc

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

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15-03-2012 дата публикации

Process for coating glass onto a flexible stainless steel substrate

Номер: US20120060559A1
Принадлежит: EI Du Pont de Nemours and Co

The present disclosure relates to a method of manufacturing of a glass coated metal product. This invention also relates to a coated metallic substrate material that is suitable for manufacturing flexible solar cells and other articles in which a passivated stainless steel surface is desirable.

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22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

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29-03-2012 дата публикации

Solution-processed inorganic photo-voltaic devices and methods of production

Номер: US20120073622A1
Принадлежит: UNIVERSITY OF CALIFORNIA

Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices.

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29-03-2012 дата публикации

Alternating Bias Hot Carrier Solar Cells

Номер: US20120073657A1
Принадлежит: Ostendo Technologies Inc

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

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19-04-2012 дата публикации

Photovoltaic cell with buffer zone

Номер: US20120090677A1
Автор: Bernard L. Sater
Принадлежит: MH Solar Co Ltd

Systems and methods that provide a barrier for protection of active layers associated with a vertical multi junction (VMJ) photovoltaic cell. Buffer zone(s) in form of an inactive layer(s) arrangement safe guard the active layers against induced stress or strain resulting from external forces/thermal factors (e.g., welding). The buffer zone can be in form of a rim on a surface of an end layer of a cell unit, to act as a protective boundary for such active layer, and to further partially frame the VMJ cell for ease of handling and transportation.

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19-04-2012 дата публикации

Gas injection device and solar cell manufacturing method using the same

Номер: US20120094424A1

A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

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17-05-2012 дата публикации

Selenization of precursor layer containing culns2 nanoparticles

Номер: US20120122268A1
Принадлежит: PURDUE RESEARCH FOUNDATION

A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS 2 , CuIn(S y ,Se 1−y ) 2 , CuGaS 2 , CuGa(S y ,Se 1−y ) 2 , Cu(In x Ga 1−x )S 2 , and Cu(In x Ga 1−x )(S y ,Se 1−y ) 2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 1≦y≦0.

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17-05-2012 дата публикации

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

Номер: US20120122304A1
Автор: Robert D. Wieting
Принадлежит: CM Manufacturing Inc

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

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24-05-2012 дата публикации

Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles

Номер: US20120129322A1
Принадлежит: ISOVOLTAIC AG

A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite material is particularly well suited for the production of photoactive layers.

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31-05-2012 дата публикации

Thin-film solar cell and manufacturing method thereof

Номер: US20120132281A1
Принадлежит: Nexpower Technology Corp

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

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07-06-2012 дата публикации

SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING Cu, Zn, Sn, S, AND Se

Номер: US20120138866A1
Принадлежит: PURDUE RESEARCH FOUNDATION

Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

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21-06-2012 дата публикации

Methods for forming a transparent oxide layer for a photovoltaic device

Номер: US20120156828A1
Принадлежит: General Electric Co

A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.

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28-06-2012 дата публикации

Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Номер: US20120161106A1

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

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28-06-2012 дата публикации

Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof

Номер: US20120161130A1
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

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12-07-2012 дата публикации

Nanograin Material and Photoelectric Conversion Device

Номер: US20120175593A1
Автор: Koji Murayama
Принадлежит: Murata Manufacturing Co Ltd

A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two kinds of surfactants, a hole-transporting surfactant and an electron-transporting surfactant, which are concurrently present. Moreover, the hole-transporting surfactant has a HOMO level which tunneling-resonates with the valence band of the quantum dot and the electron-transporting surfactant has a LUMO level which tunneling-resonates with the transfer band of the quantum dot. Thus, a nanograin material which has good carrier transport efficiency and is suitable for use in a photoelectric conversion device is achieved.

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12-07-2012 дата публикации

Methods of manufacturing solar cell

Номер: US20120178205A1
Автор: Yong-Duck Chung

Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

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19-07-2012 дата публикации

Substrate structure for semiconductor device fabrication and method for fabricating the same

Номер: US20120181664A1
Принадлежит: Individual

The present invention proposes a strip plate structure and a method of manufacturing the same. In one embodiment, the strip plate structure comprises a strip plate array comprising a plurality of strip plates arranged in a predetermined direction with spacing, each of said strip plates including a first surface facing one side direction of the strip plate structure and a second surface facing an substantially opposite side direction of the strip plate structure; and a plurality of strip sheets, each strip sheet alternately abutting either the first surfaces or the second surfaces of two adjacent strip plates.

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30-08-2012 дата публикации

Sputtering target and method for producing the same

Номер: US20120217157A1
Принадлежит: Mitsubishi Materials Corp

[Problems] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu—Ga powder or a mixed powder of NaF powder, Cu—Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

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13-09-2012 дата публикации

Continuous Electroplating Apparatus with Assembled Modular Sections for Fabrications of Thin Film Solar Cells

Номер: US20120231574A1
Автор: Jiaxiong Wang
Принадлежит: Individual

An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process.

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20-09-2012 дата публикации

Fabricating method of solar cell

Номер: US20120237670A1

Provided are fabricating methods of a solar cell capable of displaying a predetermined color. The method includes forming a first electrode on a substrate and forming a light-absorbing layer on the first electrode. The light-absorbing layer may have a composition ratio, a content of the amorphous portion, or an energy bandgap controlled to absorb a light with a predetermined wavelength. In addition, selective transmission layers may be formed on and below the light-absorbing layer to control the color displayed by the solar cell. Furthermore, a second electrode may be formed on the light-absorbing layer.

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20-09-2012 дата публикации

Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same

Номер: US20120238053A1
Принадлежит: AQT SOLAR Inc

In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

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27-09-2012 дата публикации

Method and Device for Cadmium-Free Solar Cells

Номер: US20120240989A1
Принадлежит: CM Manufacturing Inc

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

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11-10-2012 дата публикации

Substrate processing apparatus, method for manufacturing solar battery, and method for manufacturing substrate

Номер: US20120258566A1
Принадлежит: HITACHI KOKUSAI ELECTRIC INC

There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

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25-10-2012 дата публикации

Photo detector array of geiger mode avalanche photodiodes for computed tomography systems

Номер: US20120267746A1
Принадлежит: STMICROELECTRONICS SRL

The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.

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01-11-2012 дата публикации

Zone Melt Recrystallization of Thin Films

Номер: US20120273792A1
Принадлежит: Integrated Photovoltaics Inc

A solar cell comprises a recrystallized layer wherein the recrystallized layer has at least one crystal grain at least 90% of the size of the illuminated area of the solar cell.

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08-11-2012 дата публикации

Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

Номер: US20120280226A1
Принадлежит: Individual

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

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08-11-2012 дата публикации

Image pickup device

Номер: US20120280295A1
Принадлежит: Canon Inc

An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

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08-11-2012 дата публикации

Waveguide photo-detector

Номер: US20120280347A1

Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

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15-11-2012 дата публикации

Electroplating method for depositing continuous thin layers of indium or gallium rich materials

Номер: US20120288986A1
Принадлежит: SoloPower Inc

An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

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06-12-2012 дата публикации

Solar cell module and method of manufacturing solar cell module

Номер: US20120305080A1
Принадлежит: Mitsubishi Chemical Corp

The solar cell module having a configuration in which a solar cell is formed on the metal-resin composite substrate, and exhibiting excellent durability. The solar cell module 10 includes a metal-resin composite substrate 16 consisting of a resin layer 16 A having a melting point of not less than 125° C. sandwiched between metal layers 16 B; a lower encapsulation layer 15 and/or an adhesion layer 15 B arranged on the metal-resin composite substrate 16; and a power generation element 13 including a power generation layer sandwiched between a couple of electrodes, and arranged on the lower encapsulation layer 16 or the adhesion layer 15 B.

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13-12-2012 дата публикации

HYDRAZINE-COORDINATED Cu CHALCOGENIDE COMPLEX AND METHOD OF PRODUCING THE SAME

Номер: US20120315210A1
Принадлежит: Tokyo Ohka Kogyo Co Ltd

A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing a hydrazine-coordinated Cu chalcogenide complex, including reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

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20-12-2012 дата публикации

Solar cell employing an enhanced free hole density p-doped material and methods for forming the same

Номер: US20120318339A1
Принадлежит: International Business Machines Corp

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H 2 and the inert gas.

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27-12-2012 дата публикации

Apparatus for forming copper indium gallium chalcogenide layers

Номер: US20120325317A1
Автор: Bulent M. Basol
Принадлежит: Basol Bulent M

A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

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27-12-2012 дата публикации

Avalanche Photodiode with Special Lateral Doping Concentration

Номер: US20120326259A1
Принадлежит: SiFotonics Technologies USA Inc

Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

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10-01-2013 дата публикации

New compound semiconductors and their application

Номер: US20130009107A1
Принадлежит: LG Chem Ltd

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x Co 4 Sb 12-n-z Q′ n Se z , where Q′ is at least one selected from the group consisting of O and S, 0<x≦0.5, 0<n≦2 and 0≦z<2.

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31-01-2013 дата публикации

Processes for photovoltaic absorbers with compositional gradients

Номер: US20130025660A1
Принадлежит: Precursor Energetics Inc

Processes for making a photovoltaic absorber by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to make a photovoltaic absorber having a concentration gradient of various atoms. CIGS thin film solar cells can be made.

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31-01-2013 дата публикации

Method for manufacturing light-absorption layer for solar cell, method for manufacturing thin film solar cell using the same, and thin film solar cell using the same

Номер: US20130025671A1

Disclosed are a method of manufacturing a light-absorption layer for a solar cell, a method manufacturing a thin film solar cell using the same, and a thin film solar cell fabricated using the same. The method of manufacturing a light-absorption layer for a solar cell includes: preparing an ink composition including at least one metal precursor including at least one chalcogen element and a solvent; applying the ink composition as a precursor phase on a substrate using a solution process; and photo-sintering the ink composition applied on the substrate as a precursor phase.

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14-03-2013 дата публикации

Laser annealing for thin film solar cells

Номер: US20130065355A1
Принадлежит: Intermolecular Inc

A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

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28-03-2013 дата публикации

Thin-film solar cell manufacturing system

Номер: US20130074772A1
Принадлежит: Axuntek Solar Energy Co Ltd

A manufacturing system for thin-film solar cell is disclosed in the present invention. The manufacturing system includes a chamber, a boat disposed inside the chamber, a solid substrate with a first precursor which has a first I B group and III A group, and a flexible substrate with a second precursor which has a second I B group and III A group, a gas controller for pouring reactant gas, and a heater for increasing the temperature of the chamber, so that the reactant gas reacts to the first precursor and the second precursor to form a chalcopyrite structure.

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28-03-2013 дата публикации

Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer

Номер: US20130074915A1
Принадлежит: International Business Machines Corp

A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

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28-03-2013 дата публикации

Thin film solar cell

Номер: US20130074925A1
Принадлежит: Showa Shell Sekiyu KK

Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate ( 1 ), a backside surface electrode layer ( 2 ) formed on the substrate ( 1 ), a p-type light-absorbing layer ( 3 ) formed on the backside surface electrode layer ( 2 ), and an n-type transparent conductive film ( 5 ) formed on the p-type light-absorbing layer ( 3 ). Voids ( 6 ) are formed at the interface of the backside surface electrode layer ( 2 ) and the p-type light-absorbing layer ( 3 ).

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04-04-2013 дата публикации

NANO POWER CELL AND METHOD OF USE

Номер: US20130081672A1
Автор: Kenany Saad Al, Madou Marc
Принадлежит:

A nano power cell and method of use are described wherein the nano power cell absorbs electromagnetic energy is nano particles in an optical fluid that flow in microchannels of the nano power cell. 1. A method for manufacturing electromagnetic radiation sensitive particles , the method comprising:embedding a plurality of particles into a barrier sheet;etching the barrier sheet to expose a top portion and a bottom portion of each particle embedded in the barrier sheet, wherein the exposed top portions of the particles are separated from the exposed bottom portions by the barrier sheet;attaching a metal material onto the exposed top portions; andattaching a dye material to the exposed bottom portions to create electromagnetic sensitive particles.2. The method of further comprising removing the barrier sheet once the metal material and dye material are attached to produce a plurality of electromagnetic sensitive particles.3. The method of claim 1 , wherein attached the metal material further comprising coating the exposed top portions.4. The method of claim 3 , wherein coating the exposed top portions further comprises depositing the metal material onto the exposed top portions.5. A nano power cell claim 3 , comprising:a substrate;one or more microchannels formed in the substrate;a pump that circulates a fluid through the microchannels;the fluid containing a plurality of electromagnetically sensitive particles, wherein each electromagnetically sensitive particle has a metalized outer surface portion and a dye outer surface portion that are separated from each other and is capable of receiving a charge from an electromagnetic radiation source and retaining the charge; anda pair of electrodes receive the charges from the electromagnetically sensitive particles and outputs a current.6. The nano power cell of further comprising a fuel cell claim 5 , separate from the substrate claim 5 , that houses the pair of electrodes.7. The nano power cell of claim 5 , wherein the ...

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04-04-2013 дата публикации

Photoelectric conversion element and method of producing the same

Номер: US20130081683A1
Принадлежит: Individual

The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

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04-04-2013 дата публикации

Multi-Junction Solar Cells

Номер: US20130081684A1
Принадлежит:

Solar cell structures including multiple sub-cells that incorporate different materials that may have different lattice constants. In some embodiments, solar cell devices include several photovoltaic junctions. 1. A structure comprising:a first photovoltaic sub-cell including a first semiconductor material having a first lattice constant;a second photovoltaic sub-cell formed below the first photovoltaic sub-cell, the second photovoltaic sub-cell including a second semiconductor material having a second lattice constant different from the first lattice constant;a third photovoltaic sub-cell formed below the second photovoltaic sub-cell, the third photovoltaic sub-cell including a third semiconductor material having a third lattice constant different from the second lattice constant; anda defect-trapping layer disposed between the first and second photovoltaic sub-cells and/or between the second and third photovoltaic sub-cells, the defect-trapping layer including (i) a crystalline material comprising defects arising from lattice-mismatch of the crystalline material with an adjacent semiconductor material and (ii) a non-crystalline material having a trench, the trench having a width and a length in a plane of a surface of the adjacent semiconductor material, the length being greater than the width, the crystalline material being disposed at least partially in the trench, the defects terminating at the non-crystalline material such that a portion of the non-crystalline material is substantially free from defects.2. The structure of comprising the defect-trapping layer disposed between the first and second photovoltaic sub-cells and an addition defect-trapping layer disposed between the second and third photovoltaic sub-cells.3. A structure comprising:a semiconductor substrate;a first dielectric layer on a first surface of the semiconductor substrate, the first dielectric layer having a first trench extending to the first surface of the semiconductor substrate;a first ...

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04-04-2013 дата публикации

POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF

Номер: US20130081694A1
Принадлежит: Panasonic Corporation

Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot. 1. A method of manufacturing a polycrystalline solar cell panel , comprising:step A of preparing a P-type or N-type silicon target;step B of forming a P-type or N-type amorphous silicon film on the surface of a substrate using the P-type or N-type silicon target through sputtering; andstep C of scanning the P-type or N-type amorphous silicon film with plasma to melt the P-type or N-type amorphous silicon film and then re-crystallizing the melted P-type or N-type amorphous silicon film to form a P-type or N-type polycrystalline silicon filmthe step A including obtaining a P-type silicon target through a step of pulverizing a P-type silicon ingot containing boron and having a purity of 99.999 wt % or more to form P-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the P-type silicon powder to plasma to form P-type molten silicon, and a step of re-crystallizing the P-type molten silicon, orthe step A including obtaining an N-type silicon target through a step of pulverizing an N-type silicon ingot containing phosphorus or arsenic and having a purity of 99.999 wt % or more to form N-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the N-type silicon powder to plasma to form N-type molten silicon, and a step of re-crystallizing the N-type molten silicon. ...

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04-04-2013 дата публикации

Preformed textured semiconductor layer

Номер: US20130082357A1
Принадлежит: International Business Machines Corp

A base layer of a semiconductor material is formed with a naturally textured surface. The base layer may be incorporated within a photovoltaic structure. A controlled spalling technique, in which substrate fracture is propagated in a selected direction to cause the formation of facets, is employed. Spalling in the [110] directions of a (001) silicon substrate results in the formation of such facets of the resulting base layer, providing a natural surface texture.

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11-04-2013 дата публикации

SILICON MULTILAYER ANTI-REFLECTIVE FILM WITH GRADUALLY VARYING REFRACTIVE INDEX AND MANUFACTURING METHOD THEREFOR, AND SOLAR CELL HAVING SAME AND MANUFACTURING METHOD THEREFOR

Номер: US20130087194A1

The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient. 1. A silicon multilayer anti-reflection film comprising at least two silicon layers sequentially stacked on a substrate , wherein each silicon layer is obliquely deposited on the substrate by adjusting a tilting angle of the substrate to gradually vary an index of refraction.2. The silicon multilayer anti-reflection film according to claim 1 , wherein the substrate comprises a glass substrate or a semiconductor substrate claim 1 , and the semiconductor substrate comprises one of Si claim 1 , GaAs claim 1 , InP claim 1 , GaP claim 1 , and GaN.3. The silicon multilayer anti-reflection film according to claim 1 , wherein the silicon layer has a gradually increasing or decreasing index of refraction.4. The silicon multilayer anti-reflection film according to claim 1 , wherein the tilting angle ranges from 1 to 90 degrees.5. The silicon multilayer anti-reflection film according to claim 1 , wherein the gradually varying index of refraction is realized through a stepped configuration claim 1 , and the distribution of the gradually varying index of refraction comprises one of linear claim 1 , polynomial claim 1 , Gaussian and nonlinear ...

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18-04-2013 дата публикации

ORGANIC THIN-FILM SOLAR CELL AND PRODUCTION METHOD FOR THE SAME

Номер: US20130092238A1
Принадлежит: Asahi Glass Company, Limited

There are provided an organic thin-film solar cell having high charge transport efficiency and increased photoelectric conversion efficiency, and a method for producing the organic thin-film solar cell. An organic thin-film solar cell including in series a transparent substrate a cathode a photoelectric conversion layer having a regular phase-separated structure composed of an electron donor layer and an electron acceptor layer at least one of the electron acceptor layer and the electron donor layer having a liquid crystalline organic material containing oriented liquid crystalline molecules, an anode and a substrate 1. An organic thin-film solar cell , comprising in series:a transparent substrate;a cathode;a photoelectric conversion layer having a regular phase-separated structure composed of an electron donor layer and an electron acceptor layer, at least one of the electron acceptor layer and the electron donor layer having a liquid crystalline organic material containing oriented liquid crystalline molecules;an anode; anda substrate.2. The organic thin-film solar cell according to claim 1 ,Wherein each of the electron acceptor layer and the electron donor layer has cross-section of a comb-teeth shape with a plurality of teeth facing the cathode or the anode, and the teeth fit with each other to form the phase-separated structure.3. The organic thin-film solar cell according to claim 1 ,wherein at least one of the electron acceptor layer and the electron donor layer is formed by using a nano-imprint method.4. The organic thin-film solar cell according to claims 1 ,wherein the electron acceptor layer and the electron donor layer are separately and alternately formed between the cathode and the anode in a direction perpendicular thereto.5. The organic thin-film solar cell according to claims 2 ,wherein each of the teeth has width from 5 to 1000 nm.6. The organic thin-film solar cell according to claims 1 ,wherein the electron donor layer has a thickness from a ...

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18-04-2013 дата публикации

Methods of Fabricating Optoelectronic Devices Using Semiconductor-Particle Monolayers and Devices Made Thereby

Номер: US20130092975A1
Автор: Ajaykumar R. Jain
Принадлежит: VERSATILIS LLC

Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

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18-04-2013 дата публикации

Photovoltaic Substrate

Номер: US20130095296A1
Принадлежит: Integrated Photovoltaics Inc

A composite substrate comprising a graphitic layer and a semiconductor layer for a photovoltaic device is disclosed.

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25-04-2013 дата публикации

POLYCRYSTALLINE SILICON THIN-FILM FORMING METHOD, POLYCRYSTALLINE SILICON THIN-FILM SUBSTRATE, SILICON THIN-FILM SOLAR CELL, AND SILICON THIN-FILM TRANSISTOR DEVICE

Номер: US20130098444A1
Автор: KAWASHIMA Takahiro
Принадлежит: Panasonic Corporation

A polycrystalline silicon thin-film forming method includes: preparing a substrate; forming a precursor of a first silicon thin film including a first polycrystalline silicon phase and a non-crystalline silicon phase; exposing the first polycrystalline silicon phase; and growing, above the first silicon thin film which the first polycrystalline silicon phase is exposed, a second polycrystalline silicon phase using the first polycrystalline silicon phase as a seed crystal by a plasma chemical vapor deposition method, wherein the first polycrystalline silicon phase is formed continuously in any direction perpendicular to a thickness direction of the first silicon thin film. 1. A polycrystalline silicon thin-film forming method , the method comprising:preparing a substrate;forming, above the substrate, a precursor of a first silicon thin film including a first polycrystalline silicon phase and a non-crystalline silicon phase;exposing the first polycrystalline silicon phase by etching the precursor of the first silicon thin film by a predetermined chemical etching process in which the non-crystalline silicon phase is etched preferentially over the first polycrystalline silicon phase; andgrowing, above the first silicon thin film which the first polycrystalline silicon phase is exposed, a second polycrystalline silicon phase using the first polycrystalline silicon phase as a seed crystal by a plasma chemical vapor deposition method,wherein the first polycrystalline silicon phase is formed continuously in a direction perpendicular to a thickness direction of the first silicon thin film.2. The polycrystalline silicon thin-film forming method according to claim 1 ,wherein the predetermined chemical etching process is a dry etching process in which the first silicon thin film is irradiated with hydrogen plasma.3. The polycrystalline silicon thin-film forming method according to claim 1 ,wherein the forming of the precursor of the first silicon thin film includes:forming a ...

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25-04-2013 дата публикации

DEVICE HAVING AN AVALANCHE PHOTO DIODE AND A METHOD FOR SENSING PHOTONS

Номер: US20130099091A1
Принадлежит:

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. 1. A semiconductor device , comprising an avalanche photodiode (APD) , the APD comprises:a first doped region of a first polarity;a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region;a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; anda second doped region of the second polarity, the second doped region is spaced apart from the first doped region.2. The device according to claim 1 , wherein the first polarity is positive and the second polarity is negative.3. The device according to claim 1 , wherein the first polarity is negative and the second polarity is positive.4. The device according to wherein the buried guard ring has a non-uniform doping profile.5. The device according to claim 4 , wherein the non-uniform doping profile is arranged to increase a uniformity of an electrical field formed across the p-n junction when the APD is biased with a bias voltage that facilitates a multiplication of a number of photo-carriers in the depletion region.6. The device according to claim 4 , wherein at least one portion of the doping profile changes as a function of a distance from edges of the positive doped region.7. The device according to claim 4 , wherein the non-uniform doping profile is set to ...

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25-04-2013 дата публикации

PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR

Номер: US20130099203A1
Принадлежит: Sumitomo Electric Industries, Ltd.

A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. 1. A photodetector which includes , on a group III-V semiconductor substrate , an absorption layer of a type II multiple quantum well (MQW) structure comprising a repeated structure of a first compound semiconductor and a second compound semiconductor , and has sensitivity in a near-infrared region including wavelengths of 1.3 μm and 2.0 μm , whereina ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.2. The photodetector according to claim 1 , having a structure in which incident light enters the photodetector from the substrate side.3. The photodetector according to claim 1 , wherein a total thickness of the MQW structure is not smaller than 0.5 μm but not larger than 3.5 μm.4. The photodetector according to claim 1 , wherein a thickness of the first compound semiconductor and a thickness of the second compound semiconductor are both not smaller than 0.75 nm but not larger than 5 nm.5. The photodetector according to claim 1 , wherein the substrate comprises InP claim 1 , and the MQW structure comprises a repeated structure of InGaAs (0.38≦x≦0.68) and GaAsSb(0.36≦y≦0.62).6. The photodetector according to claim 5 , wherein an InP window layer is provided at a front surface of InP-based epitaxial layers including the MQW ...

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25-04-2013 дата публикации

LATERAL COLLECTION PHOTOVOLTAICS

Номер: US20130099342A1
Принадлежит:

A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode. 2. The device of claim 1 , wherein said thickness coverage is sufficient above said device electrode to allow collection of electrons and holes arising from photogeneration to one of said device electrode or a device counter-electrode claim 1 , as charge appropriate claim 1 , from any location within said active layer.3. The device of claim 1 , wherein the thickness coverage is sufficient above said device electrode to allow collection of photogenerated excitons to one of said device electrode or a device counter-electrode from any location within said active layer.4. The device of wherein the height claim 1 , the width claim 1 , the spacing claim 1 , the active layer thickness coverage claim 1 , and the nano-element and conduction layer composition are sufficient to concurrently enhance:collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to said device electrode or a device counter-electrode, as appropriate; andlight absorption in said active layer via reflection and light trapping of said device ...

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02-05-2013 дата публикации

SEMICONDUCTOR FERROELECTRIC COMPOSITIONS AND THEIR USE IN PHOTOVOLTAIC DEVICES

Номер: US20130104969A1
Принадлежит:

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation. 1. A ferroelectric perovskite characterized as having a band gap , E , of less than 2.5 eV.2. The ferroelectric perovskite of wherein the band gap is less than about 2.0 eV.3. The ferroelectric perovskite of wherein the band gap is in the range of from about 1.1 eV to about 1.6 eV.4. The ferroelectric perovskite of claim 1 , wherein the ferroelectric perovskite comprises a solid solution of KNbOand BaNiNbO claim 1 , wherein δ is in the range of from 0 to about 1.5. The ferroelectric perovskite of claim 4 , wherein the solid solution of KNbOand BaNiNbOis represented as (1−x)KNbOBaNiNbO claim 4 , wherein x is in the range of from about 0.01 to about 0.99.6. The ferroelectric perovskite of claim 5 , wherein x is in the range of from about 0.1 to about 0.5.7. The ferroelectric perovskite of claim 4 , wherein δ is in the range of from about 0.2 to about 0.3.8. The ferroelectric perovskite of claim 1 , wherein the ferroelectric perovskite is ferroelectric up to at least 100 degrees C.9. A photovoltaic device comprising the ferroelectric perovskite of .10. A compound comprising a solid solution of KNbOand BaNiNbO claim 1 , wherein δ is in the range of from 0 to about 1.11. The ...

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02-05-2013 дата публикации

FOUR JUNCTION SOLAR CELL

Номер: US20130104970A1

A four-junction solar cell including a first layer comprised of AlGaInP, a second layer comprised of InGaAs, a third layer comprised of GaSb, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers. Alternately, the four-junction solar cell includes AlGaInP as the top layer, InGaP as the second layer, InGaAs as the third layer and InGaSb as the bottom layer. Tunnel junctions are disposed in between each layer. An alternate solar cell design includes AlGaInP/GaAs/InGaAs/InGaSb layers. 1. A solar cell comprising:a first layer comprised of AlGaInP;a second layer comprised of InGaAs;a third layer comprised of GaSb;a fourth layer comprised of InGaSb;a first tunnel junction disposed between the first and second layers;a second tunnel junction disposed between the second and third layers; anda third tunnel junction disposed between the third and fourth layers.2. The solar cell of claim 1 , further comprising an antireflective coating situated on top of the first layer claim 1 , the antireflective coating comprising one or another of MgO+TiOand InO+SnO.3. The solar cell of claim 1 , wherein the first layer comprises:{'sup': '+', 'an n AlGaInP emitter;'}a p-type AlGaInP base; and{'sup': '+', 'a p type AlGaInP back-surface-field layer.'}4. The solar cell of claim 1 , wherein the second layer comprises:{'sup': '+', 'an n InGaAs emitter;'}a p-type InGaAs base; anda back-surface-field layer.5. The solar cell of claim 1 , wherein the third layer comprises:{'sup': '+', 'an n GaSb emitter;'}a p-type GaSb base; and{'sup': '+', 'a p type GaSb back-surface-field layer.'}6. The solar cell of claim 1 , wherein the fourth layer comprises:{'sup': '+', 'an n InGaSb emitter;'}an InGaSb base; anda p-type InGaSb substrate layer, the emitter and the base being formed on the substrate layer.7. The solar ...

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02-05-2013 дата публикации

PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE

Номер: US20130109130A1
Принадлежит:

A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device () comprising a heterojunction cell () prepared by sequentially stacking an i-type amorphous silicon semiconductor layer () and an n-type amorphous silicon semiconductor layer () on top of a substrate (p-type crystalline Ge ()), the process comprising a PHexposure treatment stage of adjusting the temperature of the substrate (), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer () on the PH-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer () on the i-type amorphous silicon semiconductor layer (), and an electrode formation stage of forming electrodes () on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate (). 1. A process for producing a photovoltaic device comprising a p-type crystalline Ge as a substrate , and a heterojunction cell prepared by sequentially stacking an i-type amorphous silicon semiconductor layer and an n-type amorphous silicon semiconductor layer on top of the substrate , the process comprising:{'sub': 3', '3, 'a PHexposure treatment stage of adjusting a temperature of the substrate, from which an oxide film formed on a surface thereof has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PHgas,'}{'sub': '3', 'an i-layer deposition stage of depositing an i-type amorphous silicon semiconductor layer on the ...

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09-05-2013 дата публикации

Photoelectric conversion device, method of manufacturing photoelectric conversion device, and photoelectric conversion module

Номер: US20130112235A1
Принадлежит: Kyocera Corp

It is an object of the present invention to provide a photoelectric conversion device and a photoelectric conversion module with enhanced conversion efficiency. The photoelectric conversion device comprises: a light-absorbing layer containing a compound semiconductor capable of photoelectric conversion; and a semiconductor layer provided on one side of the light-absorbing layer and containing sulfur, wherein more sulfur is present in part of the semiconductor layer on the aforementioned light-absorbing layer side than in part thereof on the opposite side from the aforementioned light-absorbing layer.

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09-05-2013 дата публикации

LOW-BANDGAP, MONOLITHIC, MULTI-BANDGAP, OPTOELECTRONIC DEVICES

Номер: US20130112244A1
Принадлежит: ALLIANCE FOR SUSTAINABLE ENERGY, LLC

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells () including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate () by use of at least one graded lattice constant transition layer () of InAsP positioned somewhere between the InP substrate () and the LMM subcell(s) (). These devices are monofacial () or bifacial () and include monolithic, integrated, modules (MIMs) () with a plurality of voltage-matched subcell circuits () as well as other variations and embodiments. 1. A monolithic , multi-bandgap , photovoltaic converter , comprising:a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant;{'sub': y', '1-y, 'a second subcell comprising GaInAs(P) with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant, and further, wherein the second lattice constant is equal to a lattice constant of a InAsPalloy with a bandgap greater than the first bandgap; and'}{'sub': y', '1-y, 'a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material comprising InAsPalloy with a lattice constant that changes gradually from the first lattice constant to the second lattice constant.'}2. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the lattice constant transition material is grown epitaxially on the first subcell with a gradually increasing value for y.3. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the second subcell is grown epitaxially on the lattice constant transition material.4. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the first ...

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09-05-2013 дата публикации

Layer-by-layer nanoassembled nanoparticles based thin films for solar cell and other applications

Номер: US20130112263A1

A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based material electrically attracted to the substrate or to a first optional deposit layer deposited between the substrate and the first layer, and a second layer comprising a second copper-based material deposited upon the first layer or an second optional deposit layer deposited between the first layer and the second layer, the second copper-based material electrically attracted to the first layer or to the second optional deposit layer, wherein the first copper-based material and the second copper-based material are selected from the group consisting of copper indium gallium (di)selenide (CIGS), copper indium selenium (CIS), and cadmium sulfate (CdS).

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16-05-2013 дата публикации

NANOCRYSTALLINE COPPER INDIUM DISELENIDE (CIS) AND INK-BASED ALLOYS ABSORBER LAYERS FOR SOLAR CELLS

Номер: US20130118585A1

Embodiments of the invention are to a copper indium diselenide (CIS) comprising nanoparticle where the nanoparticle includes a CIS phase and a second phase comprising a copper selenide. The CIS comprising nanoparticles are free of surfactants or binding agents, display a narrow size distribution and are 30 to 500 nm in cross section. In an embodiment of the invention, the CIS comprising nanoparticles are combined with a solvent to form an ink. In another embodiment of the invention, the ink can be used for screen or ink-jet printing a precursor layer that can be annealed to a CIS comprising absorber layer for a photovoltaic device. 1. A CIS comprising nanoparticle comprising:Cu, where optionally Cu includes some Au, Ag or both;In, Al, Zn, Sn, Ga, or any combination thereof; andSe, S, Te or any combination thereof, wherein the nanoparticle further comprises a secondary phase that comprises a compound that decomposes to a liquid, is free of a surfactant or binding agent.2. The CIS comprising nanoparticle of claim 1 , wherein the CIS comprising nanoparticle comprises Cu claim 1 , In claim 1 , and Se with a secondary phase comprising CuSe claim 1 , CuSe claim 1 , CuSe claim 1 , or any combination thereof.3. The CIS comprising nanoparticle of claim 2 , wherein the CuSe is α-CuSe claim 2 , β-CuSe claim 2 , or γ-CuSe.4. The CIS comprising nanoparticle of claim 1 , wherein the CIS comprising nanoparticle has a cubic (spharelite) or tetragonal (chalcopyrite) CIS crystal lattice.5. The CIS comprising nanoparticle of claim 4 , wherein the CIS crystal lattice comprises Cu claim 4 , In claim 4 , and Se where a portion of its In is substituted with Al claim 4 , Zn claim 4 , Sn claim 4 , Ga claim 4 , or any combination thereof claim 4 , and/or Cu is substituted with Au claim 4 , Ag claim 4 , or any combination thereof in the cation lattice.6. The CIS comprising nanoparticle of claim 4 , wherein the CIS crystal lattice comprises Cu claim 4 , In claim 4 , and Se where a portion of ...

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16-05-2013 дата публикации

SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD THEREOF

Номер: US20130122634A1
Принадлежит: ROHM CO., LTD.

A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions. 19-. (canceled)10. A fabrication method for solid-state imaging devices comprising steps of:having circuitry formed on a substrate;forming a lower electrode layer on the circuitry;patterning the lower electrode layer to separate pixel-wise into a set of segments;forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions;applying a resist layer on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments;applying an ion doping over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film;removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions; andforming a transparent electrode layer in a planarizing manner over a whole area of element regions.11. The fabrication method for solid-state imaging devices according to claim 10 , further comprising a step of forming ...

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23-05-2013 дата публикации

NANOPILLAR TUNNELING PHOTOVOLTAIC CELL

Номер: US20130125965A1
Принадлежит: Quswami, Inc.

The present disclosure relates to a nanopillar tunneling photovoltaic (“NPTPV”), and method for fabricating it. The NPTPV device has a regular array of semiconductor pillar cores formed on a substrate having a conductive surface. Layers of high-k material are formed on the cores to provide an efficient tunneling layer for electrons (or holes) generated by incident photons in the cores. Transparent conductive collector layers are formed on the tunneling layer to collect the tunneled carriers. An optimized deposition process, various surface preparations, an interfacial layer between the pillars and the high-k tunnel layer, and optimized pre- and post-deposition annealing reduce the interface trap density and thus reduce recombination prior to tunneling. The absence of a junction also reduces core recombination, resulting in a high short-circuit current. Modifying the collector material and core doping tunes the open-circuit voltage. Such NPTPVs result in large-scale low-cost PVs. 1. A photovoltaic device , comprising:a first electrode;a second electrode; and a pillar core formed of a semiconductor material and having a base, a top, a side, and a central axis, wherein the pillar core is electrically connected to the first electrode at the base;', 'a tunneling layer formed of a high-k dielectric material on the top and the side of the pillar core; and', 'a collector layer formed of a conducting material on the tunneling layer and electrically connected to the second electrode., 'a plurality of pillars formed on the first electrode layer, each pillar comprising2. The tunneling photovoltaic of claim 1 , wherein each pillar further comprises an interfacial layer between the pillar core and the tunneling layer.3. The tunneling photovoltaic of claim 1 , wherein each pillar further comprises a capping layer formed on the collector layer.4. The tunneling photovoltaic of claim 1 , further comprising;a flexible substrate underpinning the second electrode; anda flexible filler ...

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23-05-2013 дата публикации

PHOTOELECTRIC CONVERSION DEVICE

Номер: US20130125982A1
Принадлежит: KYOCERA CORPORATION

It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer. 1. A photoelectric conversion device , comprising a light-absorbing layer comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen ,wherein the light-absorbing layer comprises voids therein, and an atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.2. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises copper, andin the light-absorbing layer, an atomic concentration of copper in the vicinity of the voids is lower than an average atomic concentration of copper in the light-absorbing layer.3. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises selenium, andin the light-absorbing layer, an atomic concentration of selenium in the vicinity of the voids is lower than an average atomic concentration of selenium in the light-absorbing layer.4. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises selenium, andin the light-absorbing layer, an atomic concentration of selenium in the vicinity of the voids is higher than an average atomic concentration of selenium in the light-absorbing layer.5. The photoelectric conversion device according to claim 1 , whereinthe chalcopyrite-based compound semiconductor comprises gallium, andin the light- ...

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23-05-2013 дата публикации

CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS

Номер: US20130125988A1
Принадлежит: EI Du Pont de Nemours and Co

The present invention relates to coated binary and ternary chalcogenide nanoparticle compositions that can be used as copper zinc tin chalcogenide precursor inks. In addition, this invention relates to coated substrates comprising binary and ternary chalcogenide nanoparticle compositions and provides processes for manufacturing these coated substrates. This invention also relates to compositions of copper zinc tin chalcogenide thin films and photovoltaic cells comprising such films. In addition, this invention provides processes for manufacturing copper zinc tin chalcogenide thin films, as well as processes for manufacturing photovoltaic cells incorporating such films.

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23-05-2013 дата публикации

SEMICONDUCTOR DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC DEVICE

Номер: US20130126879A1
Автор: Kimura Hajime

The invention provides a semiconductor device having a current input type pixel in which a signal write speed is increased and an effect of variations between adjacent transistors is reduced. When a set operation is performed (write a signal), a source-drain voltage of one of two transistors connected in series becomes quite low, thus the set operation is performed to the other transistor. In an output operation, the two transistors operate as a multi-gate transistor, therefore, a current value in the output operation can be small. In other words, a current in the set operation can be large. Therefore, an effect of intersection capacitance and wiring resistance which are parasitic on a wiring and the like do not affect much, thereby the set operation can be performed rapidly. As one transistor is used in the set operation and the output operation, an effect of variations between adjacent transistors is lessened. 1. A semiconductor device comprising:a first transistor;a second transistor;a capacitor;a first circuit;a second circuit;a third circuit; anda fourth circuit,wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,wherein a gate of the first transistor is electrically connected to a first electrode of the capacitor,wherein the other of the source and the drain of the first transistor is electrically connected to a second electrode of the capacitor,wherein a gate of the second transistor is electrically connected to the gate of the first transistor,wherein the other of the source and the drain of the first transistor is electrically connected to a load,wherein the first circuit configured to control electrical connection between the source and the drain of the second transistor by a current pathway different from a channel of the second transistor;wherein the second circuit is configured to control electrical connection between the gate and the other of the source and the ...

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23-05-2013 дата публикации

SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS

Номер: US20130126952A1
Автор: MIYATA Satoe
Принадлежит: SONY CORPORATION

A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate. 1. A solid-state imaging device comprising:a semiconductor substrate; anda plurality of pixels arrayed two-dimensionally in the semiconductor substrate,each of the pixels having a photoelectric conversion element that performs photoelectric conversion,the photoelectric conversion element havinga first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type;a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; anda PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate, and further wherein the protruding shape is substantially conical.24.-. (canceled)5. The solid-state imaging device as set forth in claim 1 , wherein the first impurity region includes a low-concentration impurity region having a relatively low impurity concentration and a high-concentration impurity region ...

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06-06-2013 дата публикации

SOLUTION-BASED SYNTHESIS OF CsSnI3 THIN FILMS

Номер: US20130139872A1
Автор: Chen Zhuo, Ren Yuhang, Shum Kai
Принадлежит:

This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnIfilms on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices. 1. A process of forming CsSnIfilm on a substrate , comprising steps of:(a) providing a substrate;(b) provide CsI solution;{'sub': '2', '(c) provide SnClsolution;'}(d )spray-coating the CsI solution onto the substrate;{'sub': '2', '(e) spray-coating the SnClsolution onto the substrate;'}(f) heat treating the substrate after steps (d) and (e); and{'sub': '3', '(g) forming the CsSnIfilm on the substrate.'}2. The process of claim 1 , wherein the process steps (a) to (e) are performed under ambient condition claim 1 , and a temperature in heat treating step (f) ranging from about 150° C. to about 250° C.3. The process of claim 1 , wherein the substrate is selected from glass claim 1 , ceramic claim 1 , silicon claim 1 , and metal foils.4. The process of claim 1 , wherein the spray-coating steps (d) and (e) independently having a spray speed from about 0.03 to about 0.8 mL/min.5. The process of claim 1 , whereinthe CsI solution in (b) is about 5 wt % to about 50 wt % CsI solution by fully dissolving CsI powder (99.9% purity) in a solvent; and{'sub': 2', '2', '2, 'the SnClsolution in (c) is about 5 wt % to about 80 wt % SnClsolution by fully dissolving SnClpowder (99.9% purity) in a solvent.'}6. The process of claim 5 , whereinthe solvent for dissolving CsI powder (99.9% purity) is selected from the group consisting of water, deionized water, distilled water and mixtures thereof; and{'sub': '2', 'the solvent for dissolving SnClpowder (99.9% purity) is ...

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06-06-2013 дата публикации

COMPACT, INTERLEAVED RADIATION SOURCES

Номер: US20130142305A1
Принадлежит:

Compact, dual energy radiation scanning systems are described comprising two particle beam accelerators, each configured to accelerate charged particles to different energies, positioned parallel to a direction of movement of an object to be inspected. The accelerator may be positioned perpendicular to a plane of the conveying system, instead. Bend magnet systems bend each charged particle beam toward a respective target. Alternatively, a single dual energy accelerator capable of accelerating charged particles to at least two different energies is positioned parallel to the direction of movement of the object, or perpendicular to a plane of the conveying system. A single bend magnet system is provided to bend each accelerated charged particle beam toward the same target. The particle beams may be bent through an orbit chamber. Two separate passages may be defined through at least part of the orbit chamber, one for charged particles having each energy. 1. A radiation scanning system to examine contents of objects , the system comprising: first and second respective sources of first charged particles;', 'first and second respective accelerators, each coupled to the first and second sources of first and second charged particles, respectively;', 'wherein the first and second accelerators each accelerate the first and second charged particles to a first and second energies, respectively; and', 'first and second respective targets;', 'a first bend magnet positioned to receive the accelerated first charged particles along a first axis from the first accelerator and to direct the charged particles toward the first target along a second axis different from the first target; and', 'a second bend magnet positioned to receive the second accelerated charged particles from the second accelerator along a third axis and to direct the charged particles toward the second target along a fourth axis different from the third axis;', 'wherein impact of the first and second accelerated ...

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06-06-2013 дата публикации

SUPERCONDUCTING NANOWIRE AVALANCHE PHOTODETECTORS (SNAPS) WITH FAST RESET TIME

Номер: US20130143744A1
Принадлежит: Massachusetts Institute of Technology

A superconducting nanowire avalanche photodetector (SNAP) with improved high-speed performance. An inductive element may be coupled in series with at least two parallel-coupled nanowires. The nanowires may number 5 or fewer, and may be superconducting and responsive to even a single photon. The series inductor may ensure current diverted from a photon-absorbing nanowire propagates to other nanowires and become amplified. The series inductance may be less than 10 times the nominal inductance per nanowire, and may also be larger than a minimum inductance to avoid spurious outputs in response to a photon absorption. The series inductance may be configured to achieve a desired tradeoff between SNAP reset time and spurious outputs. For example, the series inductance may be configured achieve minimum reset time or maximum bias margin, subject to user-defined constraints. By appropriately configuring the series inductance, a systematic method of designing improved SNAPs may be provided. 1. A superconducting nanowire avalanche photodetector (SNAP) comprising:{'sub': '0;', 'at least two nanowires coupled in parallel, each of the at least two nanowires having a nominal inductance Land'}{'sub': 'S', 'an inductive element coupled in series with the at least two nanowires, the inductive element having inductance L,'}{'sub': S', '0, 'wherein Lis less than 10*L.'}2. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of nanowires; and{'sub': S', '0, 'Lis equal to or greater than (7/3)*(L/N).'}3. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of nanowires;{'sub': 'L', 'the SNAP further comprises a load resistance having value Rcoupled in parallel with the at least two nanowires;'}{'sub': 't', 'the at least two nanowires have a thermal relaxation time of value τ; and'}{'sub': S', 't', 'L', '0, 'Lis equal to or greater than (τ/3)*R−(L/N).'}4. The SNAP of claim 1 , wherein:the at least two nanowires comprise a number N of ...

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13-06-2013 дата публикации

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

Номер: US20130146142A1
Принадлежит: KABUSHIKI KAISHA TOSHIBA

An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (ZnMg)MO and ZnMOS, where M is at least one element selected from B, Al, Ga and In, and x, y, α and β are designated as 0.03≦x≦0.4, 0.005≦y≦0.2, 0.4≦α≦0.9 and 0.005≦β≦0.2, respectively, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a chalcopyrite structure or a stannite structure and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion making homo junction with the p-type portion. 1. A photoelectric conversion element , comprising:{'sub': 1-x', 'x', '1-y', 'y', '1-β', 'β', '1-α', 'α, 'a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (ZnMg)MO and ZnMOS, where M is at least one element selected from B, Al, Ga and In, and x, y, α and β are designated as 0.03≦x≦0.4, 0.005≦y≦0.2, 0.4≦α≦0.9 and 0.005≦β≦0.2, respectively;'}a second electrode; andan optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a chalcopyrite structure or a stannite structure and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly have a homo junction.2. The photoelectric conversion element of claim 1 , wherein{'sub': 1-x', 'x', '1-y', 'y', '1-β', 'β', '1-α', 'α, 'the optical absorption layer further comprises an intermediate layer provided between the first electrode and the n-type portion, the intermediate layer having a higher electrical resistance than an electrical resistance of the first electrode and comprising a second compound which ...

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13-06-2013 дата публикации

Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

Номер: US20130146905A1
Принадлежит:

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. 1. An apparatus , comprising:a base;at least one first conductor coupled to the base;a plurality of substantially spherical diodes coupled to the at least one first conductor, wherein about fifteen percent to fifty-five percent of a surface of each diode of substantially all of the plurality of substantially spherical diodes has a penetration layer or region having a first majority carrier or dopant and the remaining diode substrate has a second majority carrier or dopant; andat least one second conductor coupled to the plurality of substantially spherical diodes.2. The apparatus of claim 1 , further comprising:a lens structure optically coupled to the plurality of substantially spherical diodes.3. The apparatus of claim 1 , further comprising:a plurality of lenses suspended in a first polymer and coupled to the plurality of substantially spherical diodes.4. The apparatus of claim 3 , wherein the plurality of lenses are substantially ...

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13-06-2013 дата публикации

Photoelectric conversion element and method for manufacturing same

Номер: US20130149809A1
Принадлежит: Sony Corp

A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

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13-06-2013 дата публикации

Method of fabricating photodiode

Номер: US20130149810A1
Принадлежит: ROHM CO LTD

A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.

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20-06-2013 дата публикации

PHOTOVOLTAIC DEVICE

Номер: US20130153013A1
Принадлежит: Alta Devices, Inc.

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells. 1. A photovoltaic (PV) device comprising:an absorber layer made of a compound semiconductor;an emitter layer located closer than the absorber layer to a first side of the device; anda p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device.2. The photovoltaic (PV) device of wherein the first side of the device is a back side of the device and the second side of the device is a front side of the device.3. The photovoltaic (PV) device of wherein the emitter layer is made of a different material than the absorber layer claim 1 , such that a heterojunction is formed between the emitter layer and the absorber layer.4. The photovoltaic (PV) device of wherein the emitter layer has a larger bandgap than the absorber layer.5. The photovoltaic (PV) device of wherein an intermediate layer or layers is located between the absorber layer and the emitter layer.6. The photovoltaic (PV) device of wherein the intermediate layer or layers provides an offset between the p-n junction and the semiconductor heterojunction.7. The photovoltaic (PV) ...

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20-06-2013 дата публикации

SUBSTRATE FOR SOLAR CELL, AND SOLAR CELL

Номер: US20130153026A1
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

Provided is a substrate for a solar cell, wherein a flat chamfered portion is formed on one corner of a silicon substrate having a square shape in a planar view, or a notch is formed on the corner or close to the corner. This invention makes it possible to easily check the position of the substrate and determine the direction of the substrate in a solar cell manufacturing step, and suppresses failures generated due to the direction of the substrate. 1. A solar cell-forming silicon substrate of square shape with corners as viewed in plan view , which is provided with a chamfer at one corner or a notch at or near one corner.2. A solar cell-forming silicon substrate of square shape as viewed in plan view , having a first corner and a second corner not diagonal to the first corner , which is provided with a chamfer at the first corner or a notch at or near the first corner and with a notch at or near the second corner or a chamfer at the second corner , the notch or chamfer at the second corner is selected to be different from the chamfer or notch at the first corner.3. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , which is provided with an orientation flat at one corner or a notch at or near one corner.4100110. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , having a surface in () plane , which substrate is provided with an orientation flat or notch in a crystal orientation <> passing substantially the center of the substrate.5. A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view , which is provided with an orientation flat at one corner and a notch at or near another corner not diagonal to the one corner.6. A solar cell comprising the substrate of claim 1 , wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate claim 1 , ...

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20-06-2013 дата публикации

SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

Номер: US20130153909A1
Автор: Kimura Hajime

A voltage equal to the threshold value of a TFT () is held in capacitor unit (). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit () for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit () and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value. 1. A semiconductor device comprising:a first transistor;a second transistor;a third transistor;a fourth transistor;a fifth transistor; anda first capacitor,wherein a gate of the first transistor is electrically connected to a first electrode of the first capacitor,wherein one of a source and a drain of the second transistor is electrically connected to the gate of the first transistor,wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,wherein one of a source and a drain of the third transistor is electrically connected to a second electrode of the first capacitor,wherein one of a source and a drain of the fourth transistor is directly connected to a pixel electrode of a light-emitting element,wherein the other of the source and the drain of the fourth transistor is electrically connected to the one of the source and the drain of the first transistor, andwherein one of a source and a drain of the fifth transistor is electrically connected to the one of the source and the drain of the first transistor.2. The semiconductor device according to claim 1 ,wherein the gate of the first transistor is directly connected to the first electrode of the first capacitor.3. ...

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20-06-2013 дата публикации

AVALANCHE PHOTODIODE

Номер: US20130154045A1
Принадлежит:

An APD is provided with a semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, and in the APD, a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2×10to 1×10/cm. 1. An avalanche photodiode comprising:a semi-insulating substrate;a first mesa comprising a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate; anda second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa,{'sup': 11', '12', '2, 'wherein a total donor concentration of the n-type ...

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27-06-2013 дата публикации

Laser contact processes, laser system, and solar cell structures for fabricating solar cells with silicon nanoparticles

Номер: US20130160833A1
Принадлежит: Individual

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

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27-06-2013 дата публикации

GLASS SUBSTRATE FOR CU-IN-GA-SE SOLAR CELL AND SOLAR CELL USING SAME

Номер: US20130160845A1
Принадлежит: Asahi Glass Company, Limited

A glass substrate for a CIGS solar cell, having high cell efficiency and high glass transition temperature is provided. The glass substrate for a vapor-deposited CIGS film solar cell has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C., wherein the ratio of the average total amount of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35, and the ratio of the average Na amount within from 10 to 40 nm in depth from the surface of the glass substrate after heat treatment to such average Na amount before the heat treatment is at least 1.5. 1. A glass substrate for a vapor-deposited Cu—In—Ga—Se film solar cell , which has a glass transition temperature of at least 580° C. and an average thermal expansion coefficient of from 70×10to 100×10/° C. , whereinthe ratio of the average total amount (atom %) of Ca, Sr and Ba within from 10 to 40 nm in depth from the surface of the glass substrate to the total amount (atom %) of Ca, Sr and Ba at 5,000 nm in depth from the surface of the glass substrate is at most 0.35,{'sub': '2', 'the ratio of the average Na amount (atom %) within from 10 to 40 nm in depth from the surface of the glass substrate after a heat treatment at 600° C. under a Natmosphere for 1 hour to such average Na amount before the heat treatment is at least 1.5, and'}{'sub': 2', '2', '3', '2', '2', '2', '2', '2', '2, 'the glass substrate comprises, at 5,000 nm or more in depth from the surface of the glass substrate, as represented by mass % based on the following oxides, from 53 to 72% of SiO, from 1 to 15% of AlO, from 0.5 to 9% of MgO, from 0.1 to 11% of CaO, from 0 to 11% or SrO, from 0 to 11% or BaO, from 2 to 11% of NaO, from 2 to 21% of KO and from 0 to 10.5% of ZrO, provided that MgO+CaO+SrO+BaO is from 4 to 25%, CaO+SrO+BaO is from 2 to ...

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27-06-2013 дата публикации

POLYCRYSTALLINE SILICON SOLAR CELL PANEL AND MANUFACTURING METHOD THEREOF

Номер: US20130160849A1
Принадлежит: Panasonic Corporation

An inexpensive polycrystalline silicon solar cell panel is provided by forming a polycrystalline silicon film in which pn junctions are formed by using fewer processes and in less time. Specifically, there is provided a manufacturing method for a polycrystalline silicon solar cell panel including: a process of forming an amorphous silicon film on a substrate surface using a vapor deposition method that uses an n-type or p-type doped vapor deposition material formed of silicon; a process of plasma-doping a surface layer of the amorphous silicon film with a p-type or n-type dopant; and a process of melting the amorphous silicon film by scanning the plasma-doped amorphous silicon film with plasma and performing re-crystallization. 1. A manufacturing method for a polycrystalline silicon solar cell panel comprising:forming an amorphous silicon film on a substrate using a vapor deposition method that uses an n-type doped silicon as a vapor deposition material;plasma-doping a surface layer of the amorphous silicon film with a p-type dopant; andmelting the amorphous silicon film by scanning the plasma-doped amorphous silicon film with a plasma to polycrystallize the amorphous silicon film.2. A manufacturing method for a polycrystalline silicon solar cell panel comprising:forming an amorphous silicon film on a substrate using a vapor deposition method that uses a p-type doped silicon as a vapor deposition material;plasma-doping a surface layer of the amorphous silicon film with an n-type dopant; andmelting the amorphous silicon film by scanning the plasma-doped amorphous silicon film with a plasma to polycrystallize the amorphous silicon film.3. The manufacturing method for a polycrystalline silicon solar cell panel according to claim 1 , wherein the substrate includes glass or quartz.4. The manufacturing method for a polycrystalline silicon solar cell panel according to claim 2 , wherein the substrate includes glass or quartz.5. The manufacturing method according to claim 1 ...

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27-06-2013 дата публикации

NANOSTRUCTURED FILMS AND RELATED METHODS

Номер: US20130161614A1
Принадлежит:

Nanostructured films including a plurality of nanowells, the nanowells having a pore at the top surface of the film, the pore defining a channel that extends downwardly towards the bottom surface of the film are provided. Also provided are methods including exposing a growth substrate to an anodizing bath, applying ultrasonic vibrations to the anodizing bath, and generating a current through the anodizing bath to form the nanostructured film. The nanostructured films may be formed from TiOand may be used to provide solid state dye sensitized solar cells having high conversion efficiencies. 1. A method of forming a nanostructured film , the method comprising:exposing a growth substrate to an anodizing bath, the anodizing bath comprising an electrolyte solution,applying ultrasonic vibrations to the anodizing bath, andgenerating a current through the anodizing bath during the application of the ultrasonic vibrations to form the nanostructured film,wherein the nanostructured film comprises a plurality of tubular nanowells, the tubular nanowells each having a pore at the top surface of the nanostructured film, the pore defining a channel that extends from the top surface of the nanostructured film downwardly towards the bottom surface of the nanostructured film.2. The method of claim 1 , wherein the growth substrate is a metal growth substrate and the nanostructured film is a metal oxide nanostructured film.3. The method of claim 1 , wherein the growth substrate is a titanium growth substrate and the nanostructured film is a titanium oxide nanostructured film.4. The method of claim 1 , wherein the amplitude of the ultrasonic vibrations is in the range of from about 1 μm to about 500 μm.5. The method of claim 1 , wherein the frequency of the ultrasonic vibrations is in the range of from about 15 kHz to about 2000 kHz.6. The method of claim 1 , wherein the current is generated by applying a voltage across the growth substrate and a cathode having a rough surface.7. The ...

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04-07-2013 дата публикации

THREE-DIMENSIONAL THIN-FILM SOLAR CELLS

Номер: US20130167904A1
Автор: Moslehi Mehrdad M.
Принадлежит: SOLEXEL, INC.

A three-dimensional thin-film solar cell , comprising a three-dimensional thin-film solar cell substrate comprising a plurality of single-aperture or dual-aperture unit cells with emitter junction regions and doped base regions , emitter metallization regions and base metallization regions . Optionally, the three-dimensional thin-film solar cell may be mounted on a rear mirror for improved light trapping and conversion efficiency. 1. A three-dimensional thin-film solar cell , comprising:a three-dimensional thin-film solar cell substrate comprising emitter junction regions and doped base regions;emitter metallization regions; andbase metallization regions,wherein said three-dimensional thin-film solar cell substrate comprises a plurality of single-aperture unit cells.2. The three-dimensional thin-film solar cell of claim 1 , wherein said emitter junction regions and doped base regions comprise selective emitter junction regions and selective doped base regions.3. The three-dimensional thin-film solar cell of claim 1 , wherein said emitter junction regions comprise self-aligned emitter junction regions claim 1 , said doped base regions comprise self-aligned doped base regions claim 1 , said emitter metallization regions comprise self-aligned emitter metallization regions claim 1 , and said base metallization regions comprise self-aligned base metallization regions.4. The three-dimensional thin-film solar cell of claim 1 , wherein said three-dimensional thin-film solar cell substrate comprises a silicon substrate.5. The three-dimensional thin-film solar cell of claim 4 , wherein said silicon substrate comprises a crystalline silicon substrate.6. The three-dimensional thin-film solar cell of claim 1 , wherein said three-dimensional thin-film solar cell substrate comprises a three-dimensional thin-film solar cell substrate with a prism-array design.7. The three-dimensional thin-film solar cell of claim 6 , wherein said prism-array design comprises a hexagonal-prism ...

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04-07-2013 дата публикации

DEPOSITION OF PHOTOVOLTAIC THIN FILMS BY PLASMA SPRAY DEPOSITION

Номер: US20130167914A1
Принадлежит:

In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer. 1. A method , comprising:providing a substrate suitable for use in a photovoltaic device;plasma spraying one or more layers over the substrate, the average grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer, wherein a grain size of a grain is a measure of a dimension of the respective grain along a plane parallel to the one or more layers and wherein the thickness of a respective layer is a measure of a dimension of the respective layer along a plane perpendicular to the one or more layers.2. The method of claim 1 , wherein the grain size of the grains in each of the one or more layers is at least approximately ten times greater than the thickness of the respective layer.3. The method of claim 1 , wherein plasma spraying one or more layers comprises claim 1 , for each layer to be deposited over the substrate claim 1 , injecting a feedstock material into a Plasma Spray Deposition system claim 1 , and wherein the feedstock material includes the constituent elements claim 1 , compounds claim 1 , or alloys that form the respective layer upon plasma spraying the respective layer.4. The method of claim 3 , further comprising altering the feedstock material blend during the Plasma Spray Deposition process to obtain composition grading in the respective plasma-sprayed layer.5. The method of claim 3 , further comprising altering the feedstock material blend during the Plasma Spray Deposition process to compensate for ...

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04-07-2013 дата публикации

OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS

Номер: US20130168725A1
Принадлежит:

An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group. 1. An optoelectronic device comprising:a first conductive layer,a second conductive layer,an active layer between the first conductive layer and the second conductive layer, whereinthe active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.2. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a layer structure.3. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a filament structure.4. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a dot structure.5. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals are under a strain in at least in one direction.6. The optoelectronic device according to claim 1 , wherein the active layer has a thickness greater or equal to 10 nm and less than or equal to 1000 nm.7. The optoelectronic device according to claim 1 , wherein the element of the carbon group is silicon.8. The optoelectronic device according to claim 1 , wherein the electronic affinity of the first conductive layer is lower less than the electronic affinity of the active layer and the ionisation energy of the second conductive layer is greater than the ionisation energy of the active layer.9. The optoelectronic device according to claim 8 , wherein the optoelectronic device further comprises between the active layer and the first conductive layer a first ...

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11-07-2013 дата публикации

SINGLE-JUNCTION PHOTOVOLTAIC CELL

Номер: US20130174909A1

A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer. 1. A single-junction photovoltaic cell , comprising:a doped layer comprising a dopant diffused into a semiconductor substrate;a patterned conducting layer formed on the doped layer;a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; andan ohmic contact layer formed on the semiconductor layer.2. The single junction photovoltaic cell of claim 1 , wherein the dopant comprises zinc.3. The single junction photovoltaic cell of claim 1 , further comprising a handling substrate layer located over the ohmic contact layer claim 1 , the handling substrate comprising a conductive material comprising one of a metallic foil claim 1 , glass claim 1 , or ceramic material.4. The single junction photovoltaic cell of claim 1 , wherein the semiconductor substrate comprises gallium arsenide (GaAs) having a <110> surface crystallization orientation.5. The single junction photovoltaic cell of claim 1 , wherein the semiconductor layer is under a compressive strain.6. The single junction photovoltaic cell of claim 1 , wherein the semiconductor layer is less than about 50 microns thick. This application is a divisional of U.S. application Ser. No. 12/713,572, filed on Feb. 26, 2010, which is herein incorporated by reference in its entirety.The present invention is directed to semiconductor substrate fabrication using stress-induced substrate spalling.Cost constraints tend to exclude the use of compound semiconductor substrates for all but the most demanding photovoltaic (PV) applications, such ...

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18-07-2013 дата публикации

Multi-Franctional Coal Sorter and Method of Use Thereof

Номер: US20130184853A1
Принадлежит: MINERAL SEPARATION TECHNOLOGIES, INC.

Disclosed herein are methods of sorting coal into multiple fractions based upon x-ray absorption and size characteristics in order to remove rocks and other contaminants of various sizes from coal. The use of such dry processing of coal is desirable as it reduces pollution and transportation costs. The multi-fractional sorting of coal is a more efficient manner for identifying and removing rock and contaminants from coal. 1. A method of sorting materials into multiple fractions , comprising:providing a sample;receiving a collimated x-ray beam from an x-ray tube by a detector;determining measurements of x-ray absorption of pieces of the sample;identifying small and large pieces in the sample having a higher density than coal;sorting the large pieces from the sample by use of an air blast;sorting the small pieces from the sample by use of a smaller air blast.2. The method of claim 1 , further comprising:separating the sorted large pieces from ejected coal by use of a screen.3. The method of claim 1 , further comprising:separating the sorted small pieces from ejected coal by use of a screen.4. The method of claim 1 , wherein receiving the collimated x-ray beam by the detector is receiving a plurality of collimated x-ray beams.5. The method of claim 1 , wherein receiving the collimated x-ray beam by the detector further comprises:receiving a first collimated x-ray beam from the x-ray tube by a first detector;receiving a second collimated x-ray beam from the x-ray tube by a second detector.6. The method of claim 1 , further comprising determining identifying characteristics of the sample by use of an infrared 3D imager.7. A multi-fractional coal sorting device claim 1 , comprising:an x-ray tube, wherein the x-ray tube is in a fixed position;a first collimator attached to the x-ray tube;a second collimator attached to the x-ray tube;a first x-ray detector, wherein the first x-ray detector is in a fixed position to receive x-rays collimated by the first collimator;a second ...

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25-07-2013 дата публикации

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

Номер: US20130186456A1
Принадлежит: SANYO ELECTRIC CO., LTD.

An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench. 1. A solar cell , comprising:a semiconductor substrate having a light-receiving surface and a rear surface;a first semiconductor layer having a first conductivity type;a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, anda trench formed in the rear surface, whereinthe first semiconductor layer is formed on the rear surface in which the trench is not formed, andthe second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.2. The solar cell according to claim 1 , wherein the side surface is inclined to be continuous with the bottom surface.3. The solar cell according to claim 1 , wherein the side surface and the bottom surface are continuous to form an arc shape.4. The solar cell according to claim 1 , wherein a junction between the second semiconductor layer and the side surface and a junction between the second semiconductor layer and the bottom surface are hetero-junctions.5. The solar cell according to claim 1 , wherein the semiconductor ...

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25-07-2013 дата публикации

Apparatus And Method For Hybrid Photovoltaic Device Having Multiple, Stacked, Heterogeneous, Semiconductor Junctions

Номер: US20130189809A1
Принадлежит: Ascent Solar Technologied, Inc.

A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described. 1. A method of manufacturing a photovoltaic (PV) device comprising:fabricating PV cell layers including a I-III-VI solar absorber layer on a flexible substrate, and subdividing the PV cell layers into a first and a third PV cell on the flexible substrate;fabricating a second and fourth PV cell having a III-V solar absorber layer having a first bandgap, the second and fourth PV cell being fabricated on crystalline substrates, the crystalline substrate seeding crystal growth in the second and fourth PV cells;removing the crystalline substrates from the second and fourth PV cell;bonding the second PV cell above the first PV cell to form a first stack, the first and second PV cells being electrically coupled in series and positioned such that at least some incident light not absorbed by the second PV cell can reach ...

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01-08-2013 дата публикации

SINGLE PHOTON AVALANCHE DIODE FOR CMOS CIRCUITS

Номер: US20130193546A1

A single photon avalanche diode for use in a CMOS integrated circuit includes a deep n-well region formed above a p-type substrate and an n-well region formed above and in contact with the deep n-well region. A cathode contact is connected to the n-well region via a heavily doped n-type implant. A lightly doped region forms a guard ring around the n-well and deep n-well regions. A p-well region is adjacent to the lightly doped region. An anode contact is connected to the p-well region via a heavily doped p-type implant. The junction between the bottom of the deep n-well region and the substrate forms a multiplication region when an appropriate bias voltage is applied between the anode and cathode and the guard ring breakdown voltage is controlled with appropriate control of the lateral doping concentration gradient such that the breakdown voltage is higher than that of the multiplication region. 1. A single photon avalanche diode , SPAD , for use in a CMOS integrated circuit , the SPAD comprising:a first region comprising a deep well of a first conductivity type, the first region being formed above a second region of a second conductivity type;a first contact connected to the first region via a conductive pathway of the first conductivity type; anda second contact connected to the second region via a conductive pathway of the second conductivity type;wherein the doping in the vicinity of the first region is controlled such that the breakdown voltage is smaller at the junction between the bottom of the deep well and the second region than elsewhere around the first region, whereby the junction forms a SPAD multiplication region when an appropriate bias voltage is applied between the contacts.2. A SPAD according to claim 1 , wherein the first and second contacts are arranged on the same surface.3. A SPAD according to claim 1 , wherein the second region is a substrate or epi-layer.4. A single photon avalanche diode claim 1 , SPAD claim 1 , for use in a CMOS integrated ...

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08-08-2013 дата публикации

Process for Producing a Transparent Electrode, Method of Manufacturing a Photovoltaic Cell Array

Номер: US20130199610A1
Автор: Kun Ho Ahn
Принадлежит: Schueco TF GmbH and Co KG

A method can be used to produce a photovoltaic cell. A first transparent electrically conductive layer is deposited over the substrate. A metal oxide layer is deposited over a surface of the electrically conductive layer facing away from the substrate. The metal oxide layer is subdivided into a number of metal particles by a thermal decomposition. A second transparent electrically conductive layer is deposited over the metal particles.

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08-08-2013 дата публикации

Method for Forming Flexible Solar Cells

Номер: US20130199611A1
Принадлежит: Twin Creeks Technologies Inc

The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 μm, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 μm. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

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