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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 47492. Отображено 100.
05-01-2012 дата публикации

Single poly cmos imager

Номер: US20120001242A1
Автор: Howard E. Rhodes
Принадлежит: Round Rock Research LLC

More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.

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05-01-2012 дата публикации

Rtp heating system and method

Номер: US20120003774A1
Автор: Shiezen Steven HUANG
Принадлежит: Individual

An RTP heating system and an RTP heating method, which can heat a photovoltaic-device intermediate product having a glass substrate, a Mo layer, and a light absorption layer in formation. The RTP heating system is composed of a chamber; a support member located in the chamber; a heating element mounted in the chamber for emitting infrared rays for heating; and a plurality of temperature sensors and a temperature control device for sensing and controlling thermal sources from the heating element and the support member. The infrared rays can be mostly reflected off the Mo layer to apply less direct heating to the glass substrate. Accordingly, the upper and lower surfaces of the photovoltaic-device intermediate product can be heated under different temperatures separately to prevent the glass substrate below the photovoltaic-device intermediate product from softening and deformation and to allow production of the light absorption layer on the Mo layer.

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28-02-2020 дата публикации

Прозрачный гетеропереход на основе оксидов

Номер: RU0000196426U1

Полезная модель представляет собой структуру и выбор материалов для изготовления прозрачного гетероперехода, в котором оба слоя n- и р-типа проводимости изготавливаются методом золь-гель технологии.Прозрачный гетеропереход на основе оксидов, содержащий подложку с последовательно нанесенными пленкой алюмината меди в качестве р-слоя и поликристаллической пленкой оксида цинка легированного алюминием в качестве n-слоя, а также с серебряными электродами, нанесенными на эти слои, отличающийся тем, что подложка выполнена из плавленого кварца, пленка оксида цинка выполнена толщиной от 82 до 87 нм, легирована алюминием с молярным соотношением Zn:Al, 1:0,03, размер ее зерен равен 9-12 нм, пленка алюмината меди выполнена толщиной от 75 до 85 нм, легирована хромом с молярным соотношением Cu:Al:Cr, 1:0,5:0,5, представляет собой поликристаллический слой с размером зерен 50-57 нм, поликристаллические зерна оксида цинка легированного алюминием ориентированы осями [101] и [100] относительно направлений [101] и [006] поликристаллов алюмината меди легированного хромом с рассогласованием менее 1%.Предложенные структура и состав устройства обеспечивают улучшение планарности границы гетероперехода, тем самым увеличивая значение оптического пропускания гетероструктуры в видимом и ближнем ИК-диапазонах. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 196 426 U1 (51) МПК H01L 31/109 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/109 (2020.01) (21)(22) Заявка: 2019144309, 27.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 28.02.2020 (45) Опубликовано: 28.02.2020 Бюл. № 7 Адрес для переписки: 197101, Санкт-Петербург, Кронверкский пр., 49, Университет ИТМО, ОИС и НТИ 1 9 6 4 2 6 U 1 (56) Список документов, цитированных в отчете о поиске: RU 2667689 C2, 24.09.2018. RU 2394305 C2, 10.07.2010. RU 2703519 C1, 18.10.2019. RU 2416135 C2, 10.04.2011. RU 2593915 C2, 10.08.2016. RU 2701467 C1, 26.09.2019. RU ...

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12-01-2012 дата публикации

Solid imaging device

Номер: US20120007149A1
Принадлежит: Hamamatsu Photonics KK

In a solid-state imaging device 1 , an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16 1 to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V 1 to V 5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4 , whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

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19-01-2012 дата публикации

Black silicon based metal-semiconductor-metal photodetector

Номер: US20120012967A1

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

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02-02-2012 дата публикации

Photodetector structure and method of manufacturing the same

Номер: US20120025265A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

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02-02-2012 дата публикации

Integrated circuit combination of a target integrated circuit and a plurality of cells connected thereto using the top conductive layer

Номер: US20120025342A1
Принадлежит: SOL CHIP Ltd

A target integrated circuit (TIC) having a top conductive layer (TCL) that may be connected to a plurality of cells that are further integrated over the TIC. Each of the plurality of cells comprises two conductive layers, a lower conductive layer (LCL) below the cell and an upper conductive layer (UCL) above the cell. Both conductive layers may connect to the TCL of the TIC to form a super IC structure combined of the TIC and the plurality of cells connected thereto. Accordingly, conductivity between the TIC as well as auxiliary circuitry to the TIC maybe achieved.

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16-02-2012 дата публикации

Visible sensing transistor, display panel and manufacturing method thereof

Номер: US20120037912A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

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23-02-2012 дата публикации

Semiconductor device, method for manufacturing same, and display device

Номер: US20120043540A1
Автор: Tomohiro Kimura
Принадлежит: Individual

The present invention provides a semiconductor device capable of suppressing a contact failure due to an increase in contact resistance, a production method of the semiconductor device, and a display device. The present invention provides a semiconductor device which includes a thin-film diode including a crystalline semiconductor layer which includes a cathode region and an anode region, a cathode electrode connected to the cathode region, and an anode electrode connected to the anode region, the thin-film diode, the cathode electrode, and the anode electrode being disposed on a substrate, and which is featured in that the crystalline semiconductor layer includes a first low-impurity-concentration region having an impurity concentration lower than the impurity concentration of the cathode region, in that the first low-impurity-concentration region is arranged adjacent to the cathode region, and in that the cathode electrode is in contact with an area of the cathode region, the area being within 3 μm from the boundary at which the cathode region is in contact with the first low-impurity-concentration region.

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08-03-2012 дата публикации

Solid-state imaging element and camera system

Номер: US20120057056A1
Автор: Yusuke Oike
Принадлежит: Sony Corp

A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

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22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

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05-04-2012 дата публикации

Apparatus and method for detecting radiation

Номер: US20120080604A1
Принадлежит: Drtech Corp

An apparatus and method for detecting radiation are provided. The apparatus includes an upper electrode layer transmitting radiation; a first insulating layer blocking charges from the upper electrode layer; a photoconductive layer becoming photoconductive upon exposure to the radiation; a second insulating layer protecting the photoconductive layer from a plasma discharge; a lower substrate facing the second insulating layer; a plurality of barrier ribs defining a cell structure between the second insulating layer and the lower substrate; a gas layer included in an inner chamber inside the cell structure and generating a plasma discharge; a bottom electrode formed on the lower substrate; a first radio frequency (RF) electrode formed over the bottom electrode and connected to a ground source; a second RF electrode to which RF power for generating plasma is applied; and a third insulating layer surrounding the first and second RF electrodes and thus insulating the first and second RF electrodes from the gas layer and the bottom electrode.

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05-04-2012 дата публикации

Photoelectric converter, method of manufacturing photoelectric converter and imaging device

Номер: US20120080675A1
Принадлежит: Fujifilm Corp

A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.

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05-04-2012 дата публикации

Image Sensing Device and Fabrication Thereof

Номер: US20120080766A1
Принадлежит: Himax Imaging Inc

An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.

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12-04-2012 дата публикации

Electronic image detection device

Номер: US20120086010A1

The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes.

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19-04-2012 дата публикации

Photovoltaic cell with buffer zone

Номер: US20120090677A1
Автор: Bernard L. Sater
Принадлежит: MH Solar Co Ltd

Systems and methods that provide a barrier for protection of active layers associated with a vertical multi junction (VMJ) photovoltaic cell. Buffer zone(s) in form of an inactive layer(s) arrangement safe guard the active layers against induced stress or strain resulting from external forces/thermal factors (e.g., welding). The buffer zone can be in form of a rim on a surface of an end layer of a cell unit, to act as a protective boundary for such active layer, and to further partially frame the VMJ cell for ease of handling and transportation.

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19-04-2012 дата публикации

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

Номер: US20120091566A1
Принадлежит: Q Cells SE

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

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19-04-2012 дата публикации

Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus

Номер: US20120093290A1

According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

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03-05-2012 дата публикации

Composition for producing a filter material for radiation, method for producing a composition for a filter material, material for filtering radiation, and an optoelectronic device comprising the material

Номер: US20120104291A1
Принадлежит: OSRAM Opto Semiconductors GmbH

Composition for producing a filter material for radiation includes a silicone and at least one dye dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength of 400 nm to 700 nm, and has a relative transmission of greater than 50% for radiation of the wavelength of 850 nm to 1025 nm.

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10-05-2012 дата публикации

Method of forming silicide for contact plugs

Номер: US20120112300A1
Принадлежит: United Microelectronics Corp

A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a second material layer. The second material layer surrounds the sidewall of the opening, covers part of the bottom of the opening and exposes the metal layer.

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17-05-2012 дата публикации

Light-emitting chip, light-emitting device, print head and image forming apparatus

Номер: US20120120176A1
Принадлежит: Fuji Xerox Co Ltd

A light-emitting chip includes: a substrate; plural light-emitting elements arrayed in line on the substrate, each of the light-emitting elements including a light-emitting region having a length in an array direction of the array different from a length in a direction orthogonal to the array direction; and a light-up current supplying interconnection including plural connecting portions, each of the connecting portions being provided on the light-emitting region of a corresponding one of the light-emitting elements in a shorter direction of the light-emitting region either the array direction or the direction orthogonal to the array direction, each of the connecting portions being connected to an electrode provided on the light-emitting region, the light-up current supplying interconnection supplying a current for lighting up to the plural light-emitting elements through the plural connecting portions.

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24-05-2012 дата публикации

Light emitting device, manufacturing method thereof, and optical device

Номер: US20120126269A1
Автор: Yuki Tanuma
Принадлежит: ROHM CO LTD

The present invention provides a light emitting device which is capable of enhancing the radiant intensity on a single direction. The light emitting device comprises a substrate, a lens bonded to the substrate, and an LED chip bonded to the substrate and exposed in a gap clipped between the substrate and the lens, wherein the lens has a light output surface which bulges in a direction that is defined from the substrate toward the LED chip and is contained in a thickness direction of the substrate to transmit the light emitted from the LED chip.

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14-06-2012 дата публикации

Photosensor, semiconductor device, and liquid crystal panel

Номер: US20120146028A1
Автор: Akihiro Oda, Seiji Kaneko
Принадлежит: Sharp Corp

The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. Further, a short circuit between the electrodes of the thin film diode via the light-blocking layer is prevented. A thin film diode ( 130 ) having a first semiconductor layer ( 131 ) including, at least, an n-type region ( 131 n ) and a p-type region ( 131 p ) is provided on one side of a substrate ( 101 ), and a light-blocking layer ( 160 ) is provided between the substrate and the first semiconductor layer. A metal oxide layer ( 180 ) is provided on the side of the light-blocking layer facing the first semiconductor layer. Asperities are provided on the side of the metal oxide layer facing the first semiconductor layer, and the first semiconductor layer has a geometry of asperities conforming with the asperities on the metal oxide layer.

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14-06-2012 дата публикации

Manufacturing of a camera module

Номер: US20120146170A1
Принадлежит: STMicroelectronics Grenoble 2 SAS

A camera module includes a sensor die, a glass plate, peripheral spacer, an optical element, an outer surface having a shoulder extending in a direction substantially parallel to the sensor die, and a metal layer at least partially covering the outer surface. A method of manufacturing a camera module includes providing an assembly including a sensor dice wafer, a spacer wafer in front of the sensor dice wafer, and an optical element wafer in front of the spacer wafer. The method includes sawing a top cut, using a first saw blade of a first thickness, proceeding in a direction from the optical element wafer toward the sensor dice wafer, stopping before the sensor dice wafer is reached, and sawing a bottom cut, using a second saw blade of a second thickness, proceeding in a direction from the sensor dice wafer toward the optical element wafer.

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21-06-2012 дата публикации

Light-assisted biochemical sensor

Номер: US20120153407A1
Принадлежит: Chang Gung University CGU

A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.

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28-06-2012 дата публикации

Phase change memory and method for fabricating the same

Номер: US20120161092A1
Автор: Fumitake Mieno, Youfeng He

The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, a plurality of peripheral shallow trench isolation (STI) units in the peripheral substrate, and at least one MOS transistor on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, a plurality of vertical LEDs on the N-type ion buried layer, a plurality of storage shallow trench isolation (STI) units between the vertical LEDs, and a plurality of phase change layers on the vertical LED and between the storage STI units. The storage STI units have thickness substantially equal to thickness of the vertical LEDs. The peripheral STI units have thickness substantially equal to thickness of the storage STI units. The N-type conductive region contains SiC. A top of P-type conductive region is flush with a top of the peripheral substrate. The N-type conductive region containing SiC reduces drain current through the vertical LED and raises current efficiency of the vertical LED. The peripheral circuit region can work normally without adverse influence on performance of the phase change memory.

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28-06-2012 дата публикации

Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Номер: US20120161106A1

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

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28-06-2012 дата публикации

Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof

Номер: US20120161130A1
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

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05-07-2012 дата публикации

Photosensor and Method of Manufacturing the Same

Номер: US20120168745A1
Принадлежит: Samsung Mobile Display Co Ltd

In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.

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19-07-2012 дата публикации

Organic el device

Номер: US20120181525A1
Принадлежит: Sharp Corp

An organic EL device ( 10 ) includes: a substrate ( 11 ); a planarizing film ( 12 ) comprised of an organic resin and provided over the substrate ( 11 ) so as to cover a light-emitting region (P) and a non-light-emitting region (N); a first electrode ( 13 ) provided on the planarizing film ( 12 ) so as to cover at least the light-emitting region (P); an organic layer ( 14 ) provided on the first electrode ( 13 ) so as to cover at least the light-emitting region (P); and a second electrode ( 15 ) provided on the organic layer ( 14 ) so as to cover the light-emitting region (P) and the non-light-emitting region (N). A hole ( 17 ) is formed in the non-light-emitting region (N) so as to extend from the second electrode ( 15 ) to the planarizing film ( 12 ), and at least the planarizing film ( 12 ) is exposed by an inner wall surface of the hole ( 17 ).

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02-08-2012 дата публикации

Methods for forming backside illuminated image sensors with front side metal redistribution layers

Номер: US20120193741A1
Принадлежит: Aptina Imaging Corp

Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

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02-08-2012 дата публикации

Solid-state image pickup device

Номер: US20120193745A1
Принадлежит: Canon Inc

A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

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09-08-2012 дата публикации

Robotic solar panel string assembly process

Номер: US20120199266A1
Принадлежит: Chevron USA Inc

The present invention is directed to a process for manufacture of a solar panel string assembly for a solar canopy including: horizontally aligning two solar panel support channels substantially parallel to one another; applying an adhesive with a robotic tool to an upper portion of the solar panel support channels, the robotic tool comprising a fixed track aligned parallel with the two solar panel support channels, a robotic arm assembly movably supported by the track, a positioning member for adjusting the position of the robotic arm assembly along the track, and wherein the robotic arm comprises an adhesive applicator and a vacuum lift component; and lifting with the vacuum lift component of the robot arm assembly of the robotic tool and aligning a solar panel on top of the two solar panel support channels near opposing edges of the solar panel.

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09-08-2012 дата публикации

Radiation detector

Номер: US20120199833A1
Принадлежит: Shimadzu Corp

A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.

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16-08-2012 дата публикации

Correction wedge for leaky solar array

Номер: US20120204956A1
Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

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16-08-2012 дата публикации

Orthogonal scattering features for solar array

Номер: US20120206807A1
Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

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23-08-2012 дата публикации

Optocoupler Circuit

Номер: US20120213466A1
Принадлежит: Individual

An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

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23-08-2012 дата публикации

Manufacture method for photovoltaic module

Номер: US20120214271A1
Принадлежит: Sanyo Electric Co Ltd

The invention permits a plurality of strips of resin adhesive film having a desired width and unwound from a single feeding reel to be simultaneously pasted on a solar cell. For this purpose, the invention comprises the steps of: unwinding a resin adhesive film sheet from a reel on which the resin adhesive film sheet is wound; splitting the unwound resin adhesive film into two or more film strips in correspondence to lengths of wiring material to bond; pasting the strips of resin adhesive film on an electrode of the solar cell; and placing the individual lengths of wiring material on the electrode of the solar cell having the plural strips of resin adhesive film pasted thereon and thermally setting the resin adhesive film by heating so as to fix together the electrode of the solar cell and the wiring material.

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30-08-2012 дата публикации

Semiconductor device

Номер: US20120217605A1
Автор: Tatsuya Kunikiyo
Принадлежит: Renesas Electronics Corp

A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer.

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20-09-2012 дата публикации

Photodetector capable of detecting the visible light spectrum

Номер: US20120235028A1
Автор: Doyeol Ahn

Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

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20-09-2012 дата публикации

Organic light emitting device and method for forming the same

Номер: US20120235121A1

According to an embodiment of the disclosure, an organic light emitting device is provided, which includes: an inflexible tube comprising an external surface and an internal surface; a transparent conductive layer on the internal surface of the inflexible tube; an organic light emitting layer disposed in the inflexible tube and on the transparent conductive layer; and a conductive layer disposed in the inflexible tube and on the organic light emitting layer. According to an embodiment of the disclosure, a method for forming an organic light emitting device is also provided.

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20-09-2012 дата публикации

Optical sensor and electronic apparatus

Номер: US20120235269A1
Принадлежит: Seiko Epson Corp

An optical sensor includes an impurity region for a photodiode and an angle limiting filter limiting the incidence angle of incidence light incident to a light receiving area of the photodiode, which are formed on a semiconductor substrate. The angle limiting filter is formed by at least a first plug corresponding to a first insulating layer and a second plug corresponding to a second insulating layer located in an upper layer of the first insulating layer. Between the first plug and the second plug, there is a gap area having a gap space that is equal to or less than λ/2.

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27-09-2012 дата публикации

Photodiode and manufacturing method for same, substrate for display panel, and display device

Номер: US20120241769A1
Автор: Sumio Katoh
Принадлежит: Sharp Corp

A third semiconductor layer 14 is formed on a light receiving surface 13 a of a second semiconductor layer 13 so as to cover the light receiving surface 13 a of the second semiconductor layer 13 at least partially in a plan view. A first semiconductor layer 10 is formed on an opposite surface of the light receiving surface 13 a of the second semiconductor layer 13 so as to overlap the light receiving surface 13 a and the third semiconductor layer 14 at least partially in a plan view. In the second semiconductor layer 13 , the relative light receiving sensitivity to respective wavelengths of light has the highest value at a wavelength in an infrared region. Thus, even if the intensity of light of the infrared region that is emitted to an object of detection is not increased when sensing by a photodiode is performed using light of the infrared range, it is possible to achieve a photodiode that has a high S/N ratio, which is a ratio of data of received light with respect to noise, and that has high detection accuracy.

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27-09-2012 дата публикации

Process for the realization of islands of at least partially relaxed strained material

Номер: US20120241918A1
Автор: Romain Boulet
Принадлежит: Soitec SA

The present invention relates to the field of semiconductor manufacturing. More specifically, it relates to a method of forming islands of at least partially relaxed strained material on a target substrate including the steps of forming islands of the strained material over a side of a first substrate; bonding the first substrate, on the side including the islands of the strained material, to the target substrate; and after the step of bonding splitting the first substrate from the target substrate and at least partially relaxing the islands of the strained material by a first heat treatment.

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27-09-2012 дата публикации

Methods of fabricating light emitting diode devices

Номер: US20120244652A1

An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

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25-10-2012 дата публикации

Photo detector array of geiger mode avalanche photodiodes for computed tomography systems

Номер: US20120267746A1
Принадлежит: STMICROELECTRONICS SRL

The photo detector array is configured to generate pulses with short rise and fall times because each Geiger mode avalanche photodiode includes an anode contact, a cathode contact, an output contact electrically insulated from the anode and cathode contacts, a semiconductor layer, and at least one shield or metal structure in the semiconductor layer capacitively coupled to the semiconductor layer and coupled to the output contact. The output contacts of all Geiger mode avalanche photodiodes are connected in common and are configured to provide for detection of spikes correlated to avalanche events on any avalanche photodiode of the array.

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25-10-2012 дата публикации

Radiation Detector, Method of Manufacturing a Radiation Detector, and Lithographic Apparatus Comprising a Radiation Detector

Номер: US20120268722A1
Принадлежит: ASML Netherlands BV

In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

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01-11-2012 дата публикации

Zone Melt Recrystallization of Thin Films

Номер: US20120273792A1
Принадлежит: Integrated Photovoltaics Inc

A solar cell comprises a recrystallized layer wherein the recrystallized layer has at least one crystal grain at least 90% of the size of the illuminated area of the solar cell.

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01-11-2012 дата публикации

Solid state imaging device

Номер: US20120273837A1
Автор: Koichi Kokubun
Принадлежит: Toshiba Corp

According to one embodiment, a solid state imaging device includes a photoelectric converting portion including a semiconductor region and a semiconductor film. The semiconductor region has a first region and a second region. The first region is of a second conductivity type. The first region is provided in a semiconductor substrate. The second region is of a first conductivity type. The first conductivity type is a different conductivity type from the second conductivity type. The second region is provided on the first region. The semiconductor film is of the second conductivity type. The semiconductor film is provided on the semiconductor region. An absorption coefficient of a material of the semiconductor film to a visible light is higher than an absorption coefficient of a material of the semiconductor substrate to the visible light. A thickness of the semiconductor film is smaller than a thickness of the semiconductor region.

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01-11-2012 дата публикации

Semiconductor light-receiving device

Номер: US20120273909A1
Автор: Yuji Koyama

A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

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01-11-2012 дата публикации

Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom

Номер: US20120273913A1
Принадлежит: WISCONSIN ALUMNI RESEARCH FOUNDATION

Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.

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08-11-2012 дата публикации

Method, apparatus and system to provide conductivity for a substrate of an image sensing pixel

Номер: US20120280109A1
Принадлежит: Omnivision Technologies Inc

Techniques for promoting conductivity in a substrate for a pixel array. In an embodiment, an isolation region and a dopant well are disposed within an epitaxial layer adjoining the substrate, where a portion of the dopant well is between the substrate and a portion of the isolation well. In another embodiment, a contact is further disposed within the epitaxial layer, where a portion of the isolation region surrounds a portion of the contact.

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08-11-2012 дата публикации

Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom

Номер: US20120280226A1
Принадлежит: Individual

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

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08-11-2012 дата публикации

Solid-state imaging device

Номер: US20120281262A1
Принадлежит: Canon Inc

To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

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08-11-2012 дата публикации

Electronic device and process for manufacturing electronic device

Номер: US20120282740A1
Принадлежит: Renesas Electronics Corp

The electronic device, which allows inhibiting the breaking-away of the element from the frame member, even if the temperature change of the electronic device is repeated, and the process for manufacturing the electronic device, are achieved. An electronic device includes a photo-sensitive element formed in a wafer, a frame member installed on the wafer to surround a functional unit, and an encapsulating resin layer filling a circumference of the frame member.

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15-11-2012 дата публикации

Methods for light coupling into power semiconductors

Номер: US20120288232A1

Disclosed is a method of coupling light into a power semiconductor device having a semiconductor structure with two or more layers. The power semiconductor device has multiple cells of functionally identical units linked by multiple interconnects. In each device unit, a patterned electrode layer is disposed on the surface of the semiconductor structure. The method includes illuminating the power semiconductor device by directing a light from a light source through the patterned electrode layer to form an enhanced light coupling with the semiconductor structure. The patterned electrode layer is configured to have a micron scaled grid pattern having multiple metal grids and aperture openings that is based on a distributed resistance model having two characteristic current decay lengths.

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22-11-2012 дата публикации

Low-flux and low-noise detection circuit

Номер: US20120292490A1
Автор: Eric Sanson

The detection circuit of the Source Follower per Detector type comprises a photodiode connected to an integration node. A biasing circuit makes it possible to bias the photodiode between a first reverse-bias state and a second floating state. A readout circuit is connected to the integration node for generating a signal representative of the scene observed by the photodiode. A metal shielding is arranged around the integration node. The metal shielding is connected to an output of the readout circuit configured to have a potential varying in the same direction as the potential at the integration node.

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22-11-2012 дата публикации

Optoelectronic Devices Having Deep Level Defects and Associated Methods

Номер: US20120292729A1
Автор: Christopher Vineis
Принадлежит: SiOnyx LLC

Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm.

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13-12-2012 дата публикации

Semiconductor mos entrance window for radiation detectors

Номер: US20120313195A1
Принадлежит: Moxtek Inc

A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.

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13-12-2012 дата публикации

Light-receiving device, light receiver using same, and method of fabricating light-receiving device

Номер: US20120313210A1
Автор: Tetsuya Miyatake
Принадлежит: Fujitsu Ltd

An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

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20-12-2012 дата публикации

Active matrix substrate, glass substrate, liquid crystal panel and liquid crystal display device

Номер: US20120320307A1
Принадлежит: Sharp Corp

Each pixel 105 includes a display part 111 for displaying an image and a sensor 112 for detecting light. The sensors 112 of the pixels 105 that are systematically pre-selected from a plurality of pixels 105 are provided with a photodiode 115 and a light-shielding film 116 in a manner such that the light-shielding film 116 is positioned below the photodiode 115 so as to overlap the photodiode 115 when viewed from the direction perpendicular to the active matrix substrate, and wiring lines 117 and bus lines 118 that electrically connect all light-shielding films 116 to each other are provided so as to avoid the display parts 111 . This makes it possible to provide an active matrix substrate, a glass substrate, a liquid crystal panel, and a liquid crystal display device that can reduce the occurrence of damage due to electrostatic discharge when they are equipped with a light-receiving element and a light-shielding film to achieve optical sensor function.

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20-12-2012 дата публикации

Method for controlled layer transfer

Номер: US20120322227A1
Принадлежит: International Business Machines Corp

A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

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27-12-2012 дата публикации

Avalanche Photodiode with Special Lateral Doping Concentration

Номер: US20120326259A1
Принадлежит: SiFotonics Technologies USA Inc

Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

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03-01-2013 дата публикации

Method of manufacturing photodiode with waveguide structure and photodiode

Номер: US20130001643A1
Автор: Hideki Yagi
Принадлежит: Sumitomo Electric Industries Ltd

A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

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03-01-2013 дата публикации

Solid-state imaging device

Номер: US20130001650A1
Автор: Hirohisa Ohtsuki
Принадлежит: Panasonic Corp

The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.

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10-01-2013 дата публикации

Providing Variable Cell Density and Sizes in a Radiation Detector

Номер: US20130009267A1

An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging.

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24-01-2013 дата публикации

Hybrid silicon evanescent photodetectors

Номер: US20130020556A1
Автор: John E. Bowers
Принадлежит: UNIVERSITY OF CALIFORNIA

Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

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31-01-2013 дата публикации

Photovoltaic uv detector

Номер: US20130026382A1

A photovoltaic UV detector configured to generate an electrical output under UV irradiation. The photovoltaic UV detector comprises a first layer comprising an electrically polarized dielectric thin layer configured to generate a first electrical output under the UV irradiation; and a second, layer configured to form an electrical energy barrier at an interface between the second layer and the first layer so as to generate a second electrical output under the UV irradiation, the second electrical output having a same polarity as the first electrical output, the electrical output of the photovoltaic UV detector being a sum of at least the first electrical output and the second electrical output. The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT. The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

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31-01-2013 дата публикации

Active pixel sensor with a diagonal active area

Номер: US20130026547A1
Автор: Howard E. Rhodes
Принадлежит: Round Rock Research LLC

An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line and a processor based system with such an imaging device. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.

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31-01-2013 дата публикации

Color imaging using time-multiplexed light sources and monochrome image sensors with multi-storage-node pixels

Номер: US20130027596A1
Автор: Chung Chun Wan
Принадлежит: Individual

Electronic devices may include monochrome image sensors having multi-storage-node image sensor pixels. A multi-storage-node image pixel may be synchronized with artificial light sources of different colors and may include a floating diffusion region and multiple storage regions. The image pixels may be sequentially exposed to each light color and may store charge associated with each color in each of the different storage regions. After exposure, the stored charge may be transferred to the floating diffusion region and subsequently read out using readout circuitry. The image pixel may have one set of storage gates that can perform both storage and transfer functions. Alternatively, the image pixel may have a first set of transfer gates for transferring charge to the storage regions and a second set of transfer gates for transferring charge from the storage regions to the floating diffusion region.

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28-02-2013 дата публикации

Solid-state imaging device and electronic apparatus

Номер: US20130049082A1
Принадлежит: Sony Corp

A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

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07-03-2013 дата публикации

Solid-state image pickup apparatus and drive method therefor

Номер: US20130056619A1
Автор: Mahito Shinohara
Принадлежит: Canon Inc

A solid-state image pickup apparatus of the present invention includes a plurality of pixels arranged in a matrix. For the convenience sake, among the plurality of pixels, two pixels from which signals are not read in parallel are set to be a first pixel and a second pixel. A first reset transistor is disposed in an electrical path between a first reset power supply line and the control electrode of an amplifying transistor contained in the first pixel. A second reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the first pixel and the control electrode of an amplifying transistor contained in the second pixel. A third reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the second pixel and a second reset power supply line.

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21-03-2013 дата публикации

Roofing Products Having Receptor Zones And Photovoltaic Roofing Elements And Systems Using Them

Номер: US20130067852A1
Принадлежит:

The present invention relates generally to roofing products. The present invention relates more particularly to roofing products for use with photovoltaic elements, and to photovoltaic systems that include one or more photovoltaic elements is joined to a roofing substrate. In one embodiment, a roofing product includes a flexible roofing substrate having a top surface, the top surface having one or more receptor zones thereon, each receptor zone being adapted to receive one or more photovoltaic elements, each receptor zone having a different surfacing than the area of the top surface adjacent to it. 1. A method for making a photovoltaic roofing element comprising:providing a flexible roofing substrate having a top surface, the top surface having one or more receptor zones thereon, each of the one or more receptor zones having a different surfacing than the area of the top surface adjacent to it, each of the one or more receptor zones being adapted to receive one or more photovoltaic elements, but having no photovoltaic elements disposed thereon; and thendisposing one or more photovoltaic elements on the top surface of the flexible roofing substrate, such that each of the one or more photovoltaic elements is disposed on one or more of the one or more receptor zones of flexible roofing substrate.2. The method according to claim 1 , wherein the flexible roofing substrate is a bituminous substrate.3. The method according to claim 2 , wherein claim 2 , before disposal of the one or more photovoltaic elements on the top surface of the flexible roofing substrate claim 2 , the surfacing of the one or more receptor zones is uncoated bituminous material.4. The method according to claim 3 , wherein the step of providing the flexible roofing substrate comprising the one or more receptor zones having as their surfacing uncoated bituminous material comprisesproviding a flexible roofing substrate comprising one or more receptor zones each including uncoated bituminous material ...

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21-03-2013 дата публикации

Image capturing apparatus and defective pixel detection method

Номер: US20130070129A1
Автор: Satoshi Suzuki
Принадлежит: Canon Inc

An image capturing apparatus comprises: an image sensor including a plurality of pixels each having a microlens and a plurality of photoelectric conversion means, and defective pixel detection means for detecting defective photoelectric conversion means from among the plurality of photoelectric conversion means, wherein the defective pixel detection means determines defective photoelectric conversion means by comparing an output signal output from photoelectric conversion means of a subject, sequentially taken from the plurality of photoelectric conversion means, for detection with first signals from photoelectric conversion means included in pixels neighboring the pixel including the photoelectric conversion means of the subject for detection, each position of the photoelectric conversion means included in the neighboring pixels corresponding to a position of the photoelectric conversion means of the subject for detection with respect to the microlens.

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21-03-2013 дата публикации

In-Situ Fabrication Method for Silicon Solar Cell

Номер: US20130071965A1

An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control. 1. An in-situ fabrication method for solar cells , wherein , is comprised of the following steps:(a) pre-treating the silicon wafer;(b) placing the silicon wafer pre-treated in the implantation chamber of the plasma immersion ion implantation device, where black silicon fabrication is achieved with plasma immersion ion implantation art, and producing PN junction and forming passivation layer on said black silicon; and(c) removing the black silicon on which producing PN junction and forming passivation layer has been achieved from the plasma immersion ion implantation device, then fabricating metal back electrode on the back of the black silicon, and fabricating metal electrode on the passivation layer, and solar cell is formed after be packaged.2. The in-situ fabrication method for solar cells of claim 1 , wherein claim 1 , said step (b) further includes:(b1) placing the silicon wafer in the implantation chamber of the plasma immersion ion implantation device and connecting said silicon wafer with a power supply ...

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28-03-2013 дата публикации

SOLAR CELL MODULE AND METHOD FOR MANUFACTURING SAME

Номер: US20130074903A1
Автор: Tohoda Satoshi
Принадлежит: SANYO ELECTRIC CO., LTD.

Disclosed is a solar cell module that includes a plurality of solar cells, a wiring material, and a resin adhesive. The plurality of solar cells each includes a photoelectric conversion body and an electrode. The electrode is formed on a surface of the photoelectric conversion body. The wiring material includes a portion in direct contact with the electrode and thus electrically connects the plurality of solar cells with each other. The resin adhesive bonds the solar cells and the wiring material together. The electrode has corrugation in a surface. The maximum height of the corrugation in a region of the electrode in direct contact with the wiring material is lower than the maximum height of the corrugation in a region of the electrode not in direct contact with the wiring material. 1. A solar cell module comprising:a plurality of solar cells that each include a photoelectric conversion body and an electrode formed on a surface of the photoelectric conversion body;a wiring material that includes a portion in direct contact with the electrode and electrically connects the plurality of solar cells with each other; anda resin adhesive that bonds the solar cells and the wiring material together, whereinthe electrode has corrugation in a surface, anda maximum height of the corrugation in a region of the electrode in direct contact with the wiring material is higher than a maximum height of the corrugation in a region of the electrode not in direct contact with the wiring material.2. The solar cell module according to claim 1 , whereinthe electrode includes a plurality of conductive particles, anda volume content of the conductive particles is larger at least in a surface layer of the region of the electrode in direct contact with the wiring material than in a surface layer of the region of the electrode not in direct contact with the wiring material.3. The solar cell module according to claim 1 , wherein the resin adhesive is provided in at least part of portions ...

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28-03-2013 дата публикации

PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL

Номер: US20130074916A1
Принадлежит: E. I. DU PONT DE NEMOURS AND COMPANY

A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of a p-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the p-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes. 1. A process for the production of a MWT silicon solar cell comprising the steps:(1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer, (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (iii) an ARC layer on the front-side that leaves out the inside of the holes, and (iv) a front-side metallization in the form of a bottom set of thin conductive metal collector lines, said bottom set of thin conductive metal collector lines having no contact with the inside of the holes,(2) applying a conductive metal paste over said bottom set of thin conductive metal collector lines and to the holes of the silicon wafer to form a continuous metallization which comprises a top set of thin conductive metal collector lines and a metallization of the inside of the holes,(3) drying the applied conductive metal paste, and(4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C.,wherein the top set of thin conductive metal collector lines superimposes the bottom set of thin conductive metal collector lines,wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b ...

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28-03-2013 дата публикации

PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL

Номер: US20130074917A1
Принадлежит: E. I. DU PONT DE NEMOURS AND COMPANY

A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of an n-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the n-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes. 1. A process for the production of a MWT silicon solar cell comprising the steps:(1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer, (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (iii) an ARC layer on the front-side that leaves out the inside of the holes, and (iv) a front-side metallization in the form of a bottom set of thin conductive metal collector lines, said bottom set of thin conductive metal collector lines having no contact with the inside of the holes,(2) applying a conductive metal paste over said bottom set of thin conductive metal collector lines and to the holes of the silicon wafer to form a continuous metallization which comprises a top set of thin conductive metal collector lines and a metallization of the inside of the holes,(3) drying the applied conductive metal paste, and(4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C.,wherein the top set of thin conductive metal collector lines superimposes the bottom set of thin conductive metal collector lines,wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, and ...

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28-03-2013 дата публикации

Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof

Номер: US20130075694A1

Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

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28-03-2013 дата публикации

INFRARED LIGHT-EMITTING DIODE AND TOUCH SCREEN

Номер: US20130075765A1
Принадлежит:

This invention discloses an infrared light-emitting diode. The infrared light-emitting diode comprises: only one core for emitting infrared light; a packaging body which at least comprises a first surface that is convex and in front of the core and a second surface that is plane and on one side of the core; and leads connected to the core and extending to outside of the packaging body; wherein the infrared light emitted by the core forms at least two beams of infrared light in different directions after being emitted from the packaging body through the first surface and the second surface. With such infrared LED and the touch screen, touch system and interactive display based on the LED, at least two beams of infrared light in different directions can be emitted requiring only one core. 1. An infrared light-emitting diode , characterized in that it comprises:a core for emitting infrared light, number of the core being one;a packaging body outside the core, the packaging body at least comprising a first surface and a second surface, the first surface being convex and in front of the core, and the second surface being plane and on one side of the core; andleads connected to the core and extending to outside of the packaging body;wherein the infrared light emitted by the core forms at least two beams of infrared light in different directions after being emitted from the packaging body at least through the first surface and the second surface.2. The infrared light-emitting diode according to claim 1 , characterized in that the at least two beams of infrared light in different directions comprise infrared light in a first direction and infrared light in a second direction;a part of the infrared light emitted by the core forms the infrared light in the first direction after being refracted through the first surface;a part of the infrared light emitted by the core is full-reflected at the second surface and emitted toward the first surface, and forms the infrared light in ...

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28-03-2013 дата публикации

THREE-DIMENSIONAL BORON PARTICLE LOADED THERMAL NEUTRON DETECTOR

Номер: US20130075848A1

Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration. 1. An apparatus , comprising:a charge sensitive platform including a structure including a p+ region on a first side of an intrinsic region, an n+ region on a second side of said intrinsic region and extending portions formed of one of said p+ region or said n+ region and a portion of said intrinsic layer, wherein said extending portions have space between each extending portion of said extending portions, wherein said extending portions have a pitch within a range from about 0.1 μm to about 10 μm and a height within a range from about 10 μm to about 200 μm; andparticles of neutron sensitive material located in said space, wherein all of said have diameters consisting essentially of 10-6 m or less.2. The apparatus of claim 1 , wherein said particles comprise a molecular compound having one or more constituent elements including said a neutron conversion species.3. The apparatus of claim 1 , wherein said particles organic micro-beads.4. The apparatus of claim 1 , wherein said particles comprise thermoplastic nanoparticles.5. The apparatus of claim 1 , wherein said space between each extending portion is less than 5 μm.6. The apparatus of claim 1 , wherein said space between each extending portion is about 2 μm.7. The apparatus of claim 1 , wherein said extending portions are selected from the group consisting of pillars and ridges8. The apparatus of claim 1 , wherein the thickness of said intrinsic region is selected to achieve a desired ...

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28-03-2013 дата публикации

Highly-Depleted Laser Doped Semiconductor Volume

Номер: US20130075852A1
Принадлежит:

A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations. 1. A photodiode device , comprising:a substrate;a first doped section formed at a side of the substrate;a second doped section formed at an opposite side of the substrate from the first doped section; anda laser treated semiconductor section adjacent to and in electrical contact with the first doped section such that the first doped region and the second doped region are positioned to generate an electric field substantially capable of depleting at least a portion of the laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in the laser treated semiconductor section.2. The device of claim 1 , further comprising:a first contact coupled to the first doped section; anda second contact coupled to the second doped section.3. The device of claim 1 , wherein the first doped section and the second doped section are substantially annular and the laser treated section is substantially disk shaped.4. The device of claim 1 , wherein the first doped section is n-doped and the second doped section is p-doped.5. The device of claim 4 , wherein the laser treated semiconductor section includes a net doped n-type material and the n-doped first doped section has a higher level of n-doping than the laser treated semiconductor section.6. The device of claim 1 , wherein the laser treated semiconductor section includes a microstructured surface.7. The device of claim 1 , wherein the first doped section is a plurality of first ...

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28-03-2013 дата публикации

Light Induced Plating of Metals on Silicon Photovoltaic Cells

Номер: US20130078754A1
Принадлежит: MACDERMID ACUMEN, INC.

A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact. 1. A method of metallizing a photovoltaic solar cell to deposit a layer of metal thereon , said photovoltaic solar cell having a front side and a backside , wherein said back side comprises a layer of a metal selected from the group consisting of aluminum and aluminum alloys and said front side comprising a pattern comprising metal thereon , the method comprising the steps of: i) a source of soluble silver ions; and', 'ii) an agent that solubilizes aluminum metal ions dissolved from the layer of metal on the back side; and thereafter, 'a) contacting the photovoltaic solar cell with a light induced plating composition comprisingb) illuminating the photovoltaic solar cell with radiant energy from a light source,wherein metal ions from the light induced plating solution are plated onto the metallic pattern on the frontside of the solar cell, and wherein the solar cell is not electrically connected to an external power source during the plating, and wherein ions of the metal layer on the back side are dissolved into the light induced plating composition.2. The method according to claim 1 , wherein the light induced plating composition comprises a complexing agent for the silver ions.3. The method according to claim 1 , wherein the source of soluble silver ions is selected from the group consisting of silver oxide claim 1 , silver nitrate claim 1 , silver methanesulfonate claim 1 , silver acetate claim 1 , silver citrate claim 1 , silver sulfate and combinations of one or more of the foregoing.4. The method according to claim 3 , wherein ...

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28-03-2013 дата публикации

COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL

Номер: US20130078759A1
Принадлежит:

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. 1. A composition for forming an n-type diffusion layer , the composition comprising a glass powder and a dispersion medium , wherein the glass powder includes a donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less.2. The composition for forming an n-type diffusion layer according to claim 1 , wherein the donor element is at least one selected from phosphorous (P) or antimony (Sb).3. The composition for forming an n-type diffusion layer according to claim 1 , wherein the glass powder comprises at least one donor element-containing material selected from PO claim 1 , POor SbO claim 1 , and at least one glass component material selected from SiO claim 1 , KO claim 1 , NaO claim 1 , LiO claim 1 , BaO claim 1 , SrO claim 1 , CaO claim 1 , MgO claim 1 , BeO claim 1 , ZnO claim 1 , PbO claim 1 , CdO claim 1 , SnO claim 1 , ZrOor MoO.4. The composition for forming an n-type diffusion layer according to claim 1 , further comprising a metal element that is crystallized upon reacting with the glass powder.5. The composition for forming an n-type diffusion layer according to claim 4 , wherein the metal element that is crystallized upon reacting with the glass powder is at least one selected from silver (Ag) claim 4 , silicon (Si) or zinc (Zn).6. The composition for forming an n-type diffusion layer according to claim 1 , wherein the life time killer element is at least one selected from iron (Fe) claim 1 , copper (Cu) claim 1 , nickel (Ni) ...

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04-04-2013 дата публикации

NANO POWER CELL AND METHOD OF USE

Номер: US20130081672A1
Автор: Kenany Saad Al, Madou Marc
Принадлежит:

A nano power cell and method of use are described wherein the nano power cell absorbs electromagnetic energy is nano particles in an optical fluid that flow in microchannels of the nano power cell. 1. A method for manufacturing electromagnetic radiation sensitive particles , the method comprising:embedding a plurality of particles into a barrier sheet;etching the barrier sheet to expose a top portion and a bottom portion of each particle embedded in the barrier sheet, wherein the exposed top portions of the particles are separated from the exposed bottom portions by the barrier sheet;attaching a metal material onto the exposed top portions; andattaching a dye material to the exposed bottom portions to create electromagnetic sensitive particles.2. The method of further comprising removing the barrier sheet once the metal material and dye material are attached to produce a plurality of electromagnetic sensitive particles.3. The method of claim 1 , wherein attached the metal material further comprising coating the exposed top portions.4. The method of claim 3 , wherein coating the exposed top portions further comprises depositing the metal material onto the exposed top portions.5. A nano power cell claim 3 , comprising:a substrate;one or more microchannels formed in the substrate;a pump that circulates a fluid through the microchannels;the fluid containing a plurality of electromagnetically sensitive particles, wherein each electromagnetically sensitive particle has a metalized outer surface portion and a dye outer surface portion that are separated from each other and is capable of receiving a charge from an electromagnetic radiation source and retaining the charge; anda pair of electrodes receive the charges from the electromagnetically sensitive particles and outputs a current.6. The nano power cell of further comprising a fuel cell claim 5 , separate from the substrate claim 5 , that houses the pair of electrodes.7. The nano power cell of claim 5 , wherein the ...

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04-04-2013 дата публикации

Spectral Modification

Номер: US20130081690A1
Принадлежит:

Spectral modification devices and methods are described. For example, an apparatus for spectral modification of incident radiation includes a substrate and Raman shifting material embedded in or on the substrate, the Raman shifting material selected based on a desired optical or electrical performance of a light absorbing structure. 1. An apparatus for spectral modification of incident radiation comprising:a substrate; andRaman shifting material on or embedded in the substrate, the Raman shifting material selected based on a desired optical or electrical performance of a light absorbing structure.2. The apparatus of claim 1 , wherein the Raman shifting material comprises nano-scale particles and powdered materials.3. The apparatus of claim 2 , wherein the powdered materials comprise diamond powder.4. The apparatus of claim 2 , wherein the nano-scale particles comprise silver claim 2 , aluminum claim 2 , aluminum alloy claim 2 , or any combination thereof.5. The apparatus of claim 1 , wherein the Raman shifting material comprises titanium oxide claim 1 , diamond claim 1 , or any combination thereof.6. The apparatus of claim 1 , further comprising reflective material embedded in or on the substrate.7. The apparatus of claim 1 , further comprising silicon dopants embedded in or on the substrate.8. The apparatus of claim 1 , wherein the Raman shifting material comprises one or more composite particles claim 1 , each composite particle comprising:a first particle, wherein the first particle comprises one of scattering material, Raman shifting material, or reflective material; anda first material disposed against at least a portion of the first particle, wherein the first material comprises one of scattering material, Raman shifting material, or reflective material, further wherein the first particle and the first material comprise different materials.9. An apparatus comprising:a solar cell;a spectral modification layer disposed against at least a portion of the solar ...

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04-04-2013 дата публикации

RADIOGRAPHIC IMAGING DEVICE

Номер: US20130082184A1
Принадлежит: FUJIFILM Corporation

The present invention provides a radiographic imaging device that may image radiographic images with high sharpness while suppressing a drop in sensitivity. Namely, a radiation detector, in which a scintillator that generates light due to irradiation of radiation and a TFT substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed are sequentially layered, is positioned in such a way that radiation that has passed through a subject is made incident from the TFT substrate side. 1. A radiographic imaging device comprising: a radiation detector , in which a light-emitting layer that generates light due to irradiation of radiation and a substrate on which plural sensor portions configured including an organic photoelectric conversion material that generates electric charges by receiving light are disposed and are sequentially layered , with the radiation detector being positioned so that radiation that has passed through a subject is made incident from the substrate side.2. The radiographic imaging device according to claim 1 , wherein the substrate is configured by any of plastic resin claim 1 , an aramid claim 1 , bio-nanofibers claim 1 , or a flexible glass substrate.3. The radiographic imaging device according to claim 1 , wherein thin-film transistors claim 1 , that are configured including an amorphous oxide in their active layers and that read out the electric charges generated in the sensor portions claim 1 , are formed on the substrate in correspondence to the sensor portions.4. The radiographic imaging device according to claim 1 , wherein the substrate is adhered to an imaging region within a casing claim 1 , to which the radiation that has passed through the subject is irradiated.5. The radiographic imaging device according to claim 1 , whereinthe light-emitting layer is configured including CsI columnar crystals, andthe organic photoelectric ...

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04-04-2013 дата публикации

ACTIVE MATRIX SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL

Номер: US20130083265A1
Автор: Misaki Katsunori
Принадлежит:

An active matrix substrate () includes a plurality of switching elements (), a first protective insulating film () provided on the plurality of switching elements (), a transparent conductive layer () provided on the first protective insulating film (), a second protective insulating film () provided on the transparent conductive layer (), and a plurality of pixel electrodes () on the second protective insulating film (), wherein a groove (G) is formed in the second protective insulating film () along a vicinity of a corresponding one of the plurality of pixel electrodes () so that part of the first protective insulating film () is exposed, and the transparent conductive layer () is provided along the groove (G) of the second protective insulating film () to be exposed from a sidewall (W) of the groove (G) while being recessed from the sidewall (W) of the groove (G). 2. The active matrix substrate of claim 1 , whereinthe transparent conductive layer overlaps the plurality of pixel electrodes through the second protective insulating film, thereby constituting an auxiliary capacitor.3. The active matrix substrate of claim 1 , whereinthe transparent conductive layer comprises a plurality of transparent conductive layers each independently provided for a corresponding one of the plurality of pixels, and each overlapping a corresponding one of the plurality of pixel electrodes through the second protective insulating film, thereby constituting an auxiliary capacitor.4. The active matrix substrate of claim 1 , whereinthe transparent conductive layer comprises a plurality of transparent conductive layers each provided for a corresponding one of the plurality of pixels in a frame shape,a transparent electrode is provided within each of the transparent conductive layers between the first protective insulating film and the second protective insulating film, andthe transparent electrode overlaps a corresponding one of the plurality of pixel electrodes through the second ...

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04-04-2013 дата публикации

Detector modules and methods of manufacturing

Номер: US20130083887A1
Принадлежит: General Electric Co

Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.

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04-04-2013 дата публикации

PROCESS TO FORM AQUEOUS PRECURSOR AND ALUMINUM OXIDE FILM

Номер: US20130084672A1

One disclosed embodiment concerns an aqueous inorganic coating precursor solution comprising a mixture of water, polynuclear aluminum hydroxide cations, and polyatomic ligands selected from nitrate (NO), nitrite (NO), or combinations thereof. In certain embodiments, the composition has a molar concentration ratio of polyatomic ligands to aluminum of less than 3; an aluminum cation concentration of from about 0.01 M to about 3.5 M; and/or a polyatomic anion concentration of from about 0.1 to about 2.5 times the aluminum cation concentration. Embodiments of a method for forming the precursor solution also are disclosed. For example, certain embodiments comprise adding a metal having a sufficient reduction potential to reduce nitric acid to an aqueous solution comprising aluminum nitrate (Al(NO)). 1. An aqueous inorganic coating precursor solution comprising a mixture of water , polynuclear aluminum hydroxide cations , and polyatomic ligands selected from nitrate (NO) , nitrite (NO) , or combinations thereof , wherein the composition has a molar concentration ratio of polyatomic ligands to aluminum of less than 3.2. The aqueous inorganic precursor composition of having an aluminum cation concentration from about 0.01 M to about 3.5 M.3. The aqueous inorganic precursor composition of having a polyatomic anion concentration of from about 0.1 to about 2.5 times the aluminum cation concentration.4. A method for forming an aqueous inorganic coating precursor solution claim 2 , comprising adding to an aqueous solution comprising aluminum nitrate (Al(NO)) a metal having a sufficient reduction potential to reduce nitric acid claim 2 , wherein the molar concentration of Al ranges from about 0.01 to about 3.5 M and the Zn:Al ratio ranges from about 0.01:1 to about 3:1.5. The method of wherein the metal is zinc claim 4 , aluminum claim 4 , iron claim 4 , copper claim 4 , or combinations thereof.6. The method of further comprising precipitating an aluminum salt.7. The method of ...

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04-04-2013 дата публикации

PRINTING PLATE AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT USING THE PRINTING PLATE

Номер: US20130084676A1
Принадлежит: KYOCERA CORPORATION

Disclosed are: a printing plate having improved productivity; and a method for manufacturing a solar cell element, which uses the printing plate. A printing plate according to one embodiment of the present invention comprises: a metal plate; a buffer layer that is arranged on one main surface of the metal plate; and a slit that penetrates through the metal plate and the buffer layer. The slit has a first penetrating part that is located in the metal plate, a second penetrating part that is located in the buffer layer, and a bridge that is arranged inside and across the first penetrating part. When viewed in plan from the above-mentioned main surface side, the buffer layer-side opening edge of the first penetrating part is inside the metal plate-side opening edge of the second penetrating part. 1. A printing plate comprising:a metal plate;a buffer layer arranged on a principal plane of the metal plate; and a first penetration portion disposed in penetrating the metal plate;', 'a second penetration portion disposed in the buffer layer; and', 'a bridge that straddles an interior of the first penetration portion; and wherein, when viewed as a planar view from the principal-plane side, a rim of an opening at the buffer-layer side of the first penetration portion is inwardly disposed relative to a rim of an opening at the metal-plate side of the second penetration portion., 'a slit that penetrates the metal plate and the buffer layer; wherein the slit comprises2. The printing plate according to claim 1 , wherein claim 1 , when viewed as a planar view from the principal-plane side claim 1 , a surface on the principal-plane side of the bridge is exposed at an interior of the second penetration portion.3. The printing plate according to claim 1 , wherein the metal plate comprises an irregular surface at the principal plane thereof.4. The printing plate according to claim 1 , wherein a plurality of first slits in which end portions at one end thereof and end portions at an ...

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11-04-2013 дата публикации

METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE HAVING BACKSIDE-CONTACTED SEMICONDUCTOR CELLS

Номер: US20130087181A1
Принадлежит:

A method for producing a photovoltaic module having backside-contacted semiconductor cells which have contact regions provided on a contact side, the method including providing a non-conducting foil-type substrate, placing the contact sides of the semiconductor cells on the substrate, implementing laser drilling which penetrates the substrate to produce openings in the contact regions of the contact sides of the semiconductor cells, depositing a contacting means on the substrate to fill the openings and to form a contacting layer extending on the substrate. 115-. (canceled)16. A method for producing a photovoltaic module having backside-contacted semiconductor cells which include contact regions provided on a contact side , the method comprising:providing a non-conducting foil-type substrate;placing contact sides of the semiconductor cells on the substrate;performing a point-by-point perforation which penetrates the substrate to produce openings in contact regions of the contact sides of the semiconductor cells; anddepositing a contacting material on the substrate to fill the openings and to form a contacting layer extending on the substrate.17. The method as recited in claim 16 , wherein after the contact sides of the semiconductor cells have been placed on the substrate claim 16 , the semiconductor cells are laminated onto the substrate to cover the semiconductor cells by a laminate made of one of a ethylene vinyl acetate or plastic on the basis of organosilicon compounds.18. The method as recited in claim 16 , wherein at least one additional contacting layer is produced after the contacting material has been applied claim 16 , the at least one additional contacting layer being produced by:at least sectionally covering the contacting layer by an insulating cover layer;performing a point-by-point perforation which punctures at least one of the cover layer, the substrate, and circuit tracks in order to produce openings in the contact regions of the semiconductor ...

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11-04-2013 дата публикации

Electronic Device Module Comprising Heterogeneous Polyolefin Copolymer and Optionally Silane

Номер: US20130087198A1
Принадлежит:

An electronic device module comprising: 1. An electronic device module comprising:A. at least one electronic device, and [{'sub': v', 'hc', 'v', 'hc', 'v', 'hc', 'p, '(1) a polyolefin copolymer characterized as having has an average Mand a valley temperature between the interpolymer and high crystalline fraction, T, such that the average Mfor a fraction above Tfrom ATREF divided by average Mof the whole polymer from ATREF (M/M) is less than about 1.95 and wherein the copolymer has a CDBI of less than 60%,'}, '(2) optionally, a vinyl silane,', '(3) optionally, free radical initiator or a photoinitiator in an amount of at least about 0.05 wt % based on the weight of the copolymer, and', '(4) optionally, a co-agent in an amount of at least about 0.05 wt % based upon the weight of the copolymer., 'B. a polymeric material in intimate contact with at least one surface of the electronic device, the polymeric material comprising'}2. The module of in which the electronic device is a solar cell.3. The module of in which the free radical initiator is present.4. The module of in which the coagent is present.5. The module of in which the free radical initiator is a peroxide.6. The module of in which the polymeric material is in the form of a monolayer film in intimate contact with at least one face surface of the electronic device.7. The module of in which the polymeric material further comprises a scorch inhibitor in an amount from about 0.01 to about 1.7 wt %.8. The module of further comprising at least one glass cover sheet.9. The module of in which the free radical initiator is a photoinitiator.10. The module of which the polymeric material further comprises a polyolefin polymer grafted with an unsaturated organic compound containing at least one ethylenic unsaturation and at least one carbonyl group.11. The module of in which the unsaturated organic compound is maleic anhydride.12. The module of in which the vinyl silane is at least one of vinyl tri-ethoxy silane and vinyl ...

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11-04-2013 дата публикации

Electronic Device Module Comprising Long Chain Branched (LCB), Block or Interconnected Copolymers of Ethylene and Optionally Silane

Номер: US20130087199A1
Принадлежит:

An electronic device module is disclosed comprising: 1. An electronic device module comprising:A. at least one electronic device, and {'sub': m', 'f', 'm', 'f, 'claim-text': {'br': None, 'i': T', 'H, 'sub': m', 'f, '≧(0.2143*)+79.643,'}, '(1) an ethylenic polymer comprising at least 0.1 amyl branches per 1000 carbon atoms as determined by Nuclear Magnetic Resonance and both a highest peak melting temperature, T, in ° C., and a heat of fusion, H, in J/g, as determined by DSC Crystallinity, where the numerical values of Tand Hcorrespond to the relationship, 'B. a polymeric material in intimate contact with at least one surface of the electronic device, the polymeric material comprising'}and wherein the ethylenic polymer has less than about 1 mole percent hexene comonomer, and less than about 0.5 mole percent butene, pentene, or octene comonomer.(2) optionally, free radical initiator or a photoinitiator in an amount of at least about 0.05 wt % based on the weight of the copolymer,(3) optionally, a co-agent in an amount of at least about 0.05 wt % based upon the weight of the copolymer, and(4) optionally, a vinyl silane compound.2. The module of in which the electronic device is a solar cell.3. The module of in which the free radical initiator is present.4. The module of in which the free radical initiator is a peroxide.5. The module of in which the polymeric material is in the form of a monolayer film in intimate contact with at least one face surface of the electronic device.6. The module of further comprising at least one glass cover sheet.7. The module of which the polymeric material further comprises a polyolefin polymer grafted with an unsaturated organic compound containing at least one ethylenic unsaturation and at least one carbonyl group.8. The module of in which the unsaturated organic compound is maleic anhydride.9. An electronic device module comprising:A. at least one electronic device, andB. a polymeric material in intimate contact with at least one ...

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11-04-2013 дата публикации

PRODUCTION OF SOLAR CELL MODULES

Номер: US20130087201A1
Принадлежит: Evonik Roehm GmbH

The invention relates to the use of a) at least one (poly)alkyl(meth)acrylate and b) at least one compound according to formula (I), wherein the radicals Rand Rindependently represent an alkyl or cycloalkyl radical having 1 to 20 carbon atoms, for producing solar cell modules, in particular for producing light concentrators for solar cell modules. 2. The process of claim 1 , wherein the components a) and b) claim 1 , optionally together with further components claim 1 , are processed in a casting process to a solar module or to a component of a solar module or to a molding compound.3. The process of claim 1 , wherein component a) and component b) are comprised in a molding compound or a casting monomer mixture and the molding compound or the casting monomer mixture comprises claim 1 , as component a) claim 1 , a C-Calkyl(meth)acrylate homopolymer or copolymer.4. The process of claim 1 , wherein the molding compound or the casting monomer mixture comprises claim 1 , as component a) claim 1 , a copolymer claim 1 , comprising 80 wt. % to 99 wt. % of methyl methacrylate units and 1 wt. % to 20 wt. % of C-Calkyl acrylate units.5. The process of claim 1 , wherein claim 1 , in formula (I) claim 1 , Rand Rare each independently an alkyl or cycloalkyl residue comprising 1 to 8 carbon atoms claim 1 , which are optionally substituted with branched or unbranched alkyl groups.9. The solar cell module of claim 8 , wherein the molding is a light concentrator.10. The solar cell module of claim 9 , wherein the molding is a converging lens.11. The solar cell module of claim 10 , wherein the converging lens comprises a convex region.12. The solar cell module of claim 11 , wherein the converging lens has a planoconvex structure.13. The solar cell module of claim 12 , wherein the converging lens is a Fresnel lens.14. The solar cell module of claim 9 , further comprising a photovoltaic cell.16. The process of claim 5 , wherein claim 5 , in formula (I) claim 5 , Rand Rare each ...

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11-04-2013 дата публикации

LASER DAYLIGHT DESIGNATION AND POINTING

Номер: US20130087684A1
Принадлежит:

A laser designator system using modulated CW laser diodes and a conventional high pixel count image sensor array, such as CCD or CMOS array. These two technologies, diode lasers and imaging sensor arrays are reliable, widely used and inexpensive technologies, as compared with prior art pulsed laser systems. These systems are distinguished from the prior art systems in that they filter the laser signal spatially, by collecting light over a comparatively long period of time from a very few pixels out of the entire field of view of the image sensor array. This is in contrast to the prior art systems where the laser signal is filtered temporarily, over a very short time span, but over a large fraction of the field of view. By spatially filtering the signal outputs of the individual pixels, it becomes possible to subtract the background illumination from the illuminated laser spot. 120-. (canceled)21. A method of imaging a field of view , the method comprising:illuminating the field of view by means of a CW laser beam modulated at a first rate to provide a stream of laser pulses;imaging the field of view using a multi-pixel sensor array;accumulating signals obtained from said pixels during the detection of laser pulses reflected from said field of view in a first set of pixel signal accumulators, for the duration of a predetermined plurality of pulses, to obtain from those pixels a first set of accumulated pixel signals arising from said reflected laser pulses; andreading out said first set of accumulated pixel signals to image said field of view, after completion of said predetermined plurality of pulses.22. The method of claim 21 , further providing the step of repeating the accumulating of signals obtained from said pixels for further durations of said predetermined plurality of pulses claim 21 , to obtain further sets of accumulated pixel signals claim 21 , and reading out said further sets of accumulated pixel signals at a second rate substantially lower than said ...

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11-04-2013 дата публикации

METHOD OF CONTROLLING A SYSTEM INCLUDING AN IMAGE SENSOR AND A LIGHT SOURCE

Номер: US20130088620A1
Принадлежит: THOMSON LICENSING

A method for driving a sensor comprises, during a first time interval, generating a first type sensor value by repeatedly generating alternating periods of sensitivity and insensitivity of at least one pixel of the sensor, and reading out the sensor, and during a second time interval, generating a second type sensor value by irradiating the scene facing the sensor with pulses of electromagnetic energy having a wavelength detectable by the sensor and having predefined start times and durations, and repeatedly generating alternating periods of sensitivity and insensitivity of the at least one pixel, and reading out the pixel once again. Generating alternating periods of sensitivity and insensitivity includes repeatedly controlling transfer means and reset means of the at least one pixel to alternately enable charge transfer while removing reset from the detector element and to disable charge transfer while resetting the detector element, respectively. 1. A method of operating a system including a controllable light source and a sensor having at least two pixels , each pixel having a detector element that is adapted to detect electromagnetic energy , a storage node , first and second reset means adapted to selectively reset or remove the reset from the detector element and the storage node , respectively , transfer means adapted to selectively enable or disable charge transfer from the detector element to the storage node , readout means adapted to selectively read out the storage node , wherein the sensor is adapted to sample a scene facing the sensor during a predetermined first time interval , the method comprising , for each one of the at least two pixels:during a second time interval, generating a first type sensor value by repeatedly generating alternating periods of sensitivity and insensitivity of the at least two pixels, followed by reading out the pixels after the end of the second time period, while the controllable light source is disabled; andduring a ...

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11-04-2013 дата публикации

THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE

Номер: US20130088660A1
Автор: Kaneko Seiji
Принадлежит: SHARP KABUSHIKI KAISHA

Disclosed is a liquid crystal display device including a thin film transistor substrate, in which changes in the potential at a pixel electrode can be suppressed without decreasing the aperture ratio of a pixel. Gate wiring lines and source wiring lines are covered with a multilayer insulating film made of two layers of interlayer insulating films that overlap each other. Pixel electrodes are formed on the multilayer insulating film, and a shield electrode, which is formed of a transparent conductive material, is provided between the two layers of interlayer insulating films so as to extend along the gate wiring lines and the source wiring lines and to lie between the gate electrodes or the source electrodes and the pixel electrodes. 1. A thin film transistor substrate , comprising:a plurality of gate wiring lines that extend in parallel with each other;a plurality of source wiring lines that extend in parallel with each other so as to intersect with the respective gate wiring lines; anda thin film transistor and a pixel electrode that are provided for each of intersections of the respective gate wiring lines and the respective source wiring lines,wherein a plurality of pixels, each of which includes the thin film transistor and the pixel electrode, are defined by the respective gate wiring lines and the respective source wiring lines,wherein, in each of the pixels, the thin film transistor comprises: a gate electrode; a semiconductor layer; a source electrode; and a drain electrode, the gate electrode being connected to one of the gate wiring lines, which runs through a corresponding intersection, the semiconductor layer overlapping the gate electrode through a gate insulating film, the source electrode being connected to one side of the semiconductor layer and being connected to one of the source wiring lines, which runs through the corresponding intersection, the drain electrode being connected to another side of the semiconductor layer so as to face the source ...

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11-04-2013 дата публикации

Method of manufacturing solid-state image sensor

Номер: US20130089945A1
Принадлежит: Canon Inc

A method of manufacturing a solid-state image sensor having photoelectric conversion elements and one or more MOS transistors are formed on a semiconductor substrate is provided. The method includes forming a resist pattern having an opening and a shielding portion over the substrate; and implanting ions in the substrate through the opening. When the substrate is viewed from a direction, an isolation region that is positioned between accumulation regions adjacent to one another is exposed in the opening, and when viewed from a different direction, a channel region of the MOS transistors is exposed in the opening, and the isolation region is shielded by the shielding portion. Ions irradiated in the direction are implanted in the isolation region, and ions irradiated in the different direction are implanted in the channel region.

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18-04-2013 дата публикации

ASYMMETRIC MIM TYPE ABSORBENT NANOMETRIC STRUCTURE AND METHOD FOR PRODUCING SUCH A STRUCTURE

Номер: US20130092211A1

According to one aspect, the invention relates to an asymmetric MIM type absorbent nanometric structure (′) intended to receive a wide-band incident light wave the absorption of which is to be optimised within a given spectral band, comprising an absorbent dielectric layer () in said spectral band, of subwavelength thickness, arranged between a metal array () of subwavelength period and a metal reflector (). The elements () forming the metal array exhibit at least one dimension (w) suitable for forming a plasmonic resonator between the metal array and the metal reflector, under the elements of the array, which plasmonic resonator forms a Fabry-Pérot type longitudinal cavity resonating at a first wavelength of the aimed-for spectral absorption band, and the absorber layer exhibits, between the metal array and the metal reflector, at least one first thickness (t) suitable for forming at least one first Fabry-Pérot type vertical cavity, resonating at a second wavelength of the aimed-for absorption spectral band. 1. An asymmetric MIM type absorbent nanometric structure for receiving a wide-band incident light wave the absorption of which is to be optimised within a given spectral band in the near-infrared visible range , comprising:an absorbent dielectric layer in said spectral band, of subwavelength thickness, arranged between a metal array formed from metal elements periodically arranged with a subwavelength period and a metal reflector, whereinthe metal elements forming the metal array exhibit at least one dimension suitable for forming, between the metal array and the metal reflector, under the elements of the array, a plasmonic resonator forming a Fabry-Pérot type longitudinal cavity resonating at a first wavelength of the aimed-for spectral absorption band, andthe absorber layer exhibits, between the metal array and the metal reflector, at least one first thickness suitable for forming at least one first Fabry-Pérot type vertical cavity, resonating at a second ...

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