ПОЛУПРОВОДНИКОВОЕ СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО С ОСЬЮ СИММЕТРИИ

Полупроводниковое светоизлучающее устройство белого цвета содержит оптически прозрачный корпус с нанесенным на стенках люминофором. Внутри корпуса установлены лазерные диоды, имеющие ось симметрии. Причем лазерные диоды расположены последовательно на оси симметрии светоизлучающего устройства таким образом, что их оси симметрии совпадают между собой. Торцы лазерных диодов соединены так, что они находятся в электрическом и механическом контакте и образуют линейку лазерных диодов, диаграмма направленности излучения которой имеет ось симметрии, совпадающую с осью симметрии светоизлучающего устройства. Технический результат заключается в создании полупроводникового светоизлучающего устройства белого света большой интенсивности светового излучения без увеличения размеров светоизлучающих элементов, обеспечивающего при этом однородную засветку люминофора. 1 з.п. ф-лы, 9 ил.

СПОСОБ ОБРАБОТКИ ПОДЛОЖЕК И ПОДЛОЖКА, ОБРАБОТАННАЯ ЭТИМ СПОСОБОМ

Изобретение относится к обработке подложек для получения вогнуто-выпуклой структуры. Сущность изобретения: способ обработки подложек включает в себя распыление мелких частиц вместе со сжатым газом из трубки под давлением на поверхность подложки, диспергирование частиц, заряженных посредством трения с внутренней стенкой трубки под давлением, на поверхности подложки, при этом заряженные частицы прилипают к подложке без агрегации, формирование вогнуто-выпуклой структуры на поверхности подложки путем травления поверхности подложки с частицами как маской и одновременного удаления маски травлением. Изобретение обеспечивает возможность сократить число операций способа для формирования вогнуто-выпуклой структуры. 4 з.п. ф-лы, 8 ил.

Herstellungsverfahren einer optischen Halbleitervorrichtung

LICHTEMITTIERENDE HALBLEITERVORRICHTUNG.

SEMICONDUCTOR STRUCTURES

High resolution monolithic RGB Arrays

A light emitting diode structure comprising a p-type region 118 formed in a via and an n-type region 116 that surrounds a light emitting region 110 and the via 118. Carriers are injected laterally from the p-type region and the n-type region into the region 110 and recombine to emit light. The light emitting diode is used as a pixel in a high-resolution micro LED display.

Method for modification of built in potential of diodes

Semiconductor laser

A body 12 of a semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate 18 of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves 24 in a surface 20 thereof. Over the surface 20 of the substrate and the grooves are, in sequence, a first epitaxial layer 26 of the one conductivity type, a second epitaxial layer 28 which is the active recombination layer, a third epitaxial layer 30 of the opposite conductivity type and e.g. a fourth epitaxial layer 32 of the opposite conductivity type. The first and third layers are of material forming heterojunctions with the second active layer. The second active layer 28 has a region of uniform thickness directly over the space between the grooves. A stripe contact 36 may be provided on the fourth layer 32 directly over a region 28a of minimum thickness of the second active layer. The resulting semiconductor laser may achieve a more stable, single filament mode. ...

Monolithic LED array and a precursor thereto

A monolithic LED array precursor with a plurality of LED structures is disclosed comprising: a 1st semiconductor layer shared by the LED structures; 2nd, 3rd and 4th semiconductor layer sequentially stacked on the 1st semiconductor layer and having a trapezoidal cross-section such that they have sloped sides, the sides being preferably parabolic or approximating a Bezier curve; an electrical contact 320 on the 4th semiconductor layer; electrically insulating, transparent spacers 300 on the sides of the 4th semiconductor layer; a reflective electrically conducting layer disposed over the spacers. The 3rd sub-layer has a plurality of quantum well-sublayers. The 2nd semiconductor layer may be formed by selectively masking or selectively treating the 1st semiconductor layer. The primary contact may be a transparent conducting oxide with a convex external surface, which may have a reflective electrically conducting layer disposed thereon.

LIGHT EMITTING CHIP & OPTICAL COMMUNICATION APPARATUS

OPTICAL ELEMENTS WITH TEXTURIERTEN SEMICONDUCTOR LAYERS

LIGHT WITH ANIMAL END OF DEVICE WITH A IN THE FORM OF STEPS ONE NICHTNUKLEIERUNGSSCHICHT

<III>B<V> - luminescence diodeA

RADIATION-EMITTING SEMICONDUCTOR BODY AND METHOD FOR PRODUCTION THEREOF

Nitride semiconductor device

SEMICONDUCTOR DEVICE HAVING AN ELECTROLUMINESCENT DIODE

CADMIUM-FREE QUANTUM DOTS, TUNABLE QUANTUM DOTS, QUANTUM DOT CONTAINING POLYMER, ARTICLES, FILMS, AND 3D STRUCTURE CONTAINING THEM AND METHODS OF MAKING AND USING THEM

Quantum dots that are cadmium-free and/or stoichiometncally tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

LIGHT-EMITTING OR LIGHT-RECEIVING SEMICONDUCTOR MODULE AND METHOD FOR MAKING THE SAME

In a semiconductor module (20), twenty-five semiconductor devices (10) having light-receiving properties, for example, are arranged in five-by-five matrices using a conductor mechanism formed from six lead frames (29). Each column of semiconductor devices (10) is connected in series and each row of semiconductor devices (10) is connected in parallel. These are embedded in a light-transmitting member (31) formed from a transparent synthetic resin, and a positive electrode terminal 33 and a negative electrode terminal 34 are disposed. The semiconductor devices (10) are formed with first and second flat surfaces, and negative electrodes 9a and positive electrodes 9b are disposed.

SEMICONDUCTOR DEVICE

The present invention is a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. The spherical semiconductor element is a spherical semiconductor crystal with a photovoltaic part and a pair of electrodes. The present invention is also a semiconductor device of a semiconductor photocatalyst, photodiode or solar battery. The present invention is also a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. This spherical semiconductor element is a spherical semiconductor crystal with a pn junction and a pair of electrodes. Semiconductor devices of light-emitting diodes, various diodes, or display panels are disclosed. Referring to semiconductor photocatalyst 1 of the figure, a p-type diffusion layer 6 and a pn junction 7 is formed on an n-type silicon semiconductor spherical crystal. There is formed a micro photocell 17 which includes: photovoltaic part 16; a pair of electrode s 14 ...

Lumineszenzdiode

Halbleiteranordnung mit elektrolumineszierendem pn-Übergang, Verfahren zu deren Herstellung und deren Verwendung in einer Fernmessvorrichtung

СВЕТОИЗЛУЧАЮЩИЙ ДИОД

Светоизлучающий диод содержит подложку с прозрачным проводящим пленочным электродом, частично покрытым слоем зародышей ZnO, нанопровода ZnO с p-типом электропроводности, покрытые диэлектрической изоляционным слоем, пленочный золотой контактный электрод. В качестве слоя зародышей используют ZnO с n-типом электропроводности, а как диэлектрический изоляционный материал - фоторезист.

Substrate processing method and substrate processed by this method

Disclosed is a substrate processing method which enables to form a recessed and projected structure in a substrate surface, while reducing the number of processing steps. Specifically disclosed is a substrate processing method wherein particles (11) are scattered over a surface (10s) of a substrate (10), and a recessed and projected structure (12) is formed in the substrate surface by etching thesubstrate surface using the particles as a mask, while removing the mask (11) by the etching at the same time. By this method, a step for removing the mask (11) from the substrate surface (10s) afterformation of the recessed and projected structure (12) becomes unnecessary. Consequently, the number of processing steps required after formation of the recessed and projected structure in the substrate surface can be significantly reduced, thereby greatly improving the productivity.

Light emitting diode and manufacturing method thereof

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Electroluminescent diode

MONOLITHIC ASSOCIATION OF ELECTROLUMINESCENT DIODES AND LENSES

ELECTROLUMINESCENT DEVICE HAS EXTRACTOR OF LIGHT

EFFICIENCY LIGHT EMITTING DIODE

OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME

발광 소자

... 실시예에 따른 발광 소자는 제1 도전형의 불순물을 포함하는 제1 도전형의 GaN 기반 반도체층; 제2 도전형의 불순물을 포함하는 제2 도전형의 반도체층; 상기 제1 도전형의 GaN 기반 반도체층과 상기 제2 도전형의 반도체층 사이에 활성층; 상기 제1 도전형의 GaN 기반 반도체층과 상기 활성층 사이에 InxGa1-xN (0.3≤x≤1)의 조성식을 갖는 인듐을 포함하는 제1 질화물층; 및 상기 활성층과 상기 제2 도전형의 반도체층 사이에 상기 제1 질화물층 보다 인듐 조성이 낮은 인듐을 포함하는 제2 질화물층을 포함한다.

발광 다이오드, 백라이트 유닛 및 이를 구비한 액정표시장치

... 본 발명은 색 감차를 개선할 수 있는 발광 다이오드가 개시된다. 개시된 본 발명의 발광 다이오드는 리드 프레임과, 리드 프레임 상에 실장된 발광 칩 및 발광 칩 상에 형성된 형광물질을 포함하고, 발광 칩의 가장자리를 따라 형광물질 방향으로 돌출된 구조로 이루어져 발광 칩으로부터 출사면의 거리가 일정한 것을 특징으로 한다.

Semiconductor Light Emitting Diode Comprising Uneven Substrate

High resolution display device

COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ILLUMINATION DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PLASMON-ENHANCED ELECTROMAGNETIC-RADIATION-EMITTING DEVICES AND METHODS FOR FABRICATING THE SAME

Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device (100) comprises a multilayer core (106), a metallic device layer (108), and a substrate. The multilayer core (106) has an inner layer (110) and an outer layer (112), wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer (108) is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer (118) in electrical communication with the inner layer (110) and a top conducting layer (122) in electrical communication with the metallic device layer (108) such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting ...

LED module and its backlight device

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as ""nanowires"", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Semiconductor-chip for the optoelectronics

In a semiconductor-chip (10) the active layer (3) is broken by recess (11) to improve the light out-coupling. Thus the side-faces (9) of the active layer (3) show a large space-angle viewed from the point (6) generating the light and the light-paths in the active layer (3) are reduced.

LIGHT EMITTING DEVICE PACKAGE

A light emitting device package of the embodiments comprises: a package body; at least one light emitting device on the package body; an adhesive layer between the at least one light emitting device and the package body; and an adhesive layer accommodating unit, disposed in the package body, for accommodating the adhesive layer, wherein the lateral surfaces of the adhesive layer accommodating unit are formed to be inclined at a predetermined angle with regard to a virtual vertical surface extending in the thickness direction of the package body.

OPTOELECTRONIC DEVICE HAVING SEMI-CONDUCTIVE MICROWIRES OR NANOWIRES AND METHOD FOR PRODUCING SAME

The invention concerns an optoelectrical device (10) comprising microwires or nanowires (24) on a support (14, 20 and 22), each microwire or nanowire comprising at least one portion (26) predominantly comprising a III-V compound in contact with the substrate, in which the III-V compound is made from a first element from group V and a second element from group III, in which one face (23) of the substrate comprises first areas (20) made from a first material promoting the growth of the III-V compound according to the polarity of the first element distributed in a second area (22) made from a second material promoting the growth of the compound according to the polarity of the second element, the microwires or nanowires (24) being positioned on the first areas, in which the edge of said portion (26) is covered with a layer (36) made from a dielectric material from the substrate along a part of the total height of said portion.

OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS AND METHOD FOR THE PRODUCTION THEREOF

The invention relates to an optoelectronic device (10) comprising a carrier (14) comprising a face (18) comprising flat butt-jointed facets inclined in relation to each other; seeds (26), mainly consisting of a first compound selected from the group comprising the compounds III-V, the compounds II-VI and the compounds IV, in contact with the carrier in the region of at least some of the joints (22) between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements (28) of a nanometric or micrometric size, mainly consisting of said first compound, on the seeds.

NANOWIRE STRUCTURE AND METHOD FOR PRODUCING SUCH A STRUCTURE

A method for producing a structure (100) comprising a membrane (3) made of a first material, in particular of indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the method comprising the following steps: - shaping a nanowire device (10) comprising the receiving ends (13), the receiving ends being shaped so as to form flat surfaces, - placing, in particular by transfer, a membrane device (3; 34) directly on the nanowires at the flat surfaces of the receiving ends of the membrane.

SEMICONDUCTOR HETEROSTRUCTURE

A semiconductor heterostructure device for use as a component in an optoelectronic component, the device has a substrate, a nanocolumn extending from the substrate, a self-centred passivation layer on top of the nanocolumn, an active region which comprises a quantum well (QW) stack on a vertical side of the nanocolumn and wherein the passivation layer extends horizontally outwards from the nanocolumn to overhang the nanocolumn and the QW stack. The device provides for efficient NC heterostructure based light emitting diodes (LEDs) and other optoelectronic devices with an active region located purely on non-polar facets of the NCs. It also eliminates parasitic current paths allowing core-shell nanorod-based LEDs with emission from the desired facets only.

COMPONENT HAVING ENHANCED EFFICIENCY AND METHOD FOR PRODUCTION THEREOF

The invention relates to a component (10) having a semiconductor layer sequence (20), which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) located between them, wherein: in the region of the active zone, on the side of the p-conducting semiconductor layer, indentations (4) are formed, which in each case have facets (41) extending obliquely with respect to a main surface (30) of the active zone, wherein the p-conducting semiconductor layer extends into the indentations, the component has a barrier structure (5), wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer, and, with regard to the p-conducting semiconductor layer and the barrier structure, the component is designed in such a way that during operation of the component an injection of positively charged charge carriers via the main surface into the active zone is deliberately made more difficult, such that an injection ...

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

The invention concerns a light-emitting diode (LED) comprising an active region and having a three-dimensional (3D) structure. The 3D LED comprises: - a first layer made from GaN containing a first proportion of Aluminium and a first proportion of Indium, and - a second layer made from GaN interposed between and in contact with the first layer and the active region, containing a second proportion of Aluminium and a second proportion of Indium, the second proportion of Indium being strictly higher than the first proportion of Indium so as to promote the formation of misfit dislocations at an interface between the first and second layers. Advantageously, the active region and the first and second layers extend in semi-polar crystallographic planes. The invention further relates to a method for manufacturing such a 3D LED.

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

The invention relates to a semiconductor structure (1) suitable for emitting electromagnetic radiation. The structure (1) comprises a first and a second area (10, 20) respectively having a first and a second mutually opposite type of conductivity, said first and second areas (10, 20) being connected to one another such as to form a semiconductor junction. The first area (10) comprises at least a first and a second portion (11, 12), the first and the second portion (11, 12) being separated from one another by an intermediate layer (13), referred to as a dispersion layer, and extending substantially parallel to the junction plane along a major portion of the junction. The dispersion layer (13) is suitable for causing a dispersion of the carriers along the plane of the dispersion layer (13).

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSED BY THIS METHOD

Disclosed is a substrate processing method which enables to form a recessed and projected structure in a substrate surface, while reducing the number of processing steps. Specifically disclosed is a substrate processing method wherein particles (11) are scattered over a surface (10s) of a substrate (10), and a recessed and projected structure (12) is formed in the substrate surface by etching the substrate surface using the particles as a mask, while removing the mask (11) by the etching at the same time. By this method, a step for removing the mask (11) from the substrate surface (10s) after formation of the recessed and projected structure (12) becomes unnecessary. Consequently, the number of processing steps required after formation of the recessed and projected structure in the substrate surface can be significantly reduced, thereby greatly improving the productivity.

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

Achieved is a semiconductor light emitting element which is suppressed in the occurrence of leakage current and has enhanced luminous efficiency. A method for manufacturing a semiconductor light emitting element according to the present invention comprises: a step (a) for forming an n-type semiconductor layer on a substrate; a step (b) for forming an active layer on the n-type semiconductor layer by alternately laminating light emitting layers and blocking layers on the n-type semiconductor layer; and a step (c) for forming a p-type semiconductor layer on the active layer by supplying a p-type dopant. In the step (b), the final blocking layer that is closest to the p-type semiconductor layer among the blocking layers is formed to have a thickness that is larger than the diameter of a recess which is formed within the final blocking layer.

METHOD OF PRODUCING PRECISION VERTICAL AND HORIZONTAL LAYERS IN A VERTICAL SEMICONDUCTOR STRUCTURE

The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilised in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Micro light emitting element and image display device

... [Solution] A micro LED element (100) includes: a nitride semiconductor layer (14) including an N-side layer (11), a light emission layer (12), and a P-side layer (13); and a plurality of micro-mesas each having a slope that surrounds the light emission layer (12) and is inclined at an angle within a prescribed range including 45° as an angle (θ) formed by the slope and the light emission layer, and a flat portion formed by a surface of the P-side layer.

DISPLAY DEVICE

A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

Light emitting device

The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

A light emitting device may include: a first emission area including a first light emitting diode: a second emission area including a second light emitting diode, at least one pair of first and second partition walls facing each other in each of the first and second emission areas at least one first electrode on the first partition wail to cover the first partition wall, and being electrically connected to a first end of at least one of the first and second light emitting diodes; and at least one second electrode on the second partition wall to cover the second partition wall, and being electrically connected to a second end of at least one of the first and second light emitting diodes. The first and second partition walls may have, in the first emission area, a structure different from that in the second emission area.

Nitride semiconductor device and a process of manufacturing the same

The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are ...

Method of manufacturing a light emitting semiconductor device

A light emitting semiconductor device having a double hetero junction structure in which oscillation in a single lateral mode is stably effected. A stair-shaped step part is formed in a stripe shape upon the surface of a substrate. A current blocking layer of an opposite conductivity type is formed over the semiconductor substrate with a thickness such that the current blocking layer is interrupted along the upper edge of the stair-shaped step part to form a break area therein which acts as a current concentration region. Over the current blocking layer and break area are formed a lower clad layer, an active layer, an upper clad layer, and an ohmic contact layer.

Light-emitting diode and method of manufacturing the same

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.

SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a growth substrate, forming a reflective layer on a first surface of the light emitting structure corresponding to a surface of the second conductivity-type semiconductor layer, forming bumps on the first surface, the bumps being electrically connected to the first or second conductivity-type semiconductor layer and protruding from the reflective layer, bonding a support substrate to the bumps on the first surface, removing the growth substrate, bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed, and removing the support substrate. The reflective layer covers at least portions of side surfaces of the light ...

Nanorod light emitting device and method of manufacturing the same

A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.

Method of forming a P-type layer for a light emitting device

In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

Lighting device

A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.

Optoelectronic device comprising three-dimensional diodes

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Process for producing a semiconductor light-emitting device

Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

SEMICONDUCTOR MATERIAL INCLUDING DIFFERENT CRYSTALLINE ORIENTATION ZONES AND RELATED PRODUCTION PROCESS

The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SOURCE DEVICE

The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a light emitting device disposed on the first and second frames; a first resin disposed between the body and the light emitting device, wherein each of the first and second frames includes a through hole, the through hole overlaps the light emitting device in a vertical direction, and the body includes a recess recessed toward a lower surface of the body between the first and second frames, and the recess overlaps the light emitting device in the vertical direction, the first resin is disposed in the recess, and a length of the recess is smaller than a width of the light emitting device.

Lighting system

Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES AND AN IMPROVED RADIATION PATTERN

An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

LIGHT-EMITTING DEVICE AND DISPLAY DEVICE INCLUDING SAME

A light emitting device may include: a substrate including emission areas; a first electrode disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; light emitting elements disposed on the substrate, each of the light emitting elements including a first end and a second end in a longitudinal direction of the light emitting elements; a bank disposed in each of the emission areas and including openings in which portions of each of the unit emission areas are exposed; a first contact electrode that electrically connects the first electrode with the first end of each of the light emitting elements; and a second contact electrode that electrically connects the second electrode with the second end of each of the light emitting elements. At least one of the light emitting elements may be disposed in each of the openings.

SINGLE CHIP MULTI BAND LED AND APPLICATION THEREOF

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.

SINGLE CHIP MULTI BAND LED

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs

Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.

Lighting device and display device

The present application achieves luminance uniformity of a light-emitting region substantially circular in shape, desired high contrast, and low power consumption. A lighting device (1) is configured such that assuming that L is an external diameter of a light-emitting region (E), Xmax is the number of divisions for concentrically dividing the light-emitting region (E), and d is a radial pitch between LEDs (11) which include a centered LED (11) and LEDs (11) arranged substantially concentrically around the centered LED, d=L/(2Xmax+1), and that, in each of the n-th ring regions (Xn), an 8n number of LEDs (11) are arranged at equal pitches in a circumferential direction and are positioned at a distance equivalent to a radius nd from the centered LED (11).

Concave-hemisphere-patterned organic top-light emitting device

A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Optoelectronic device

An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.

Surface emitting light source with lateral variant refractive index profile

A micro-LED includes a light emitting device that emits a light beam surface—normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

LIGHTING DEVICE

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources spaced apart from each other at predetermined intervals on the substrate; a resin layer disposed on the substrate; a phosphor layer disposed on the resin layer and having a pattern layer including a concave portion and a convex portion formed on a surface facing the resin layer; and a diffusion layer disposed between the resin layer and the phosphor layer, wherein a thickness of the diffusion layer may be 10% or more and less than 50% of the maximum thickness of the phosphor layer.

MONOLITHIC COLOR-TUNABLE LIGHT EMITTING DIODES AND METHODS THEREOF

A monolithic LED system that is configured to emit a variety of peak wavelengths of light in response to variations in a driving current density includes an n-type region, a p-type region, and a multiple quantum well (MQW) region formed between the n-type region and the p-type region. The MQW region includes parallel layers, each doped with a percentage of Indium to enable a range of light emission between 400 and 600 nm, and one or more V-grooves formed within a portion of the parallel layers. Each of the one or more V-grooves has a lower concentration of the doped percentage of the Indium than other portions of the parallel layers. Transition regions between the one or more V-grooves and the other portions of the parallel layers have a higher concentration of the doped percentage of the Indium which decreases with distance from the one or more V-grooves.

DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

A display device may include: a substrate including a display area including a pixel area, and a non-display area including a pad area and located at at least one side of the display area; a pixel in the pixel area, the pixel including an emission area in which at least one light emitting element is located, and a non-emission area adjacent to the emission area; a pad in the pad area, the pad being electrically connected to the pixel; a first layer on the light emitting element at the pixel area; and a second layer in the pixel area and the pad area, the second layer including a pad opening formed exposing at least a portion of the pad. The first layer may include an organic layer including a hollow particle. The first layer may be spaced from the pad opening and covered with the second layer.

OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF OPERATING OPTOELECTRONIC SEMICONDUCTOR CHIP

In at least one embodiment an optoelectronic semiconductor chip includes an emission side, an assembly side opposite the emission side, and a semiconductor body. The semiconductor body includes a first semiconductor layer, a second semiconductor layer, and an active zone between the first semiconductor layer and the second semiconductor layer. The semiconductor body further has at least two emission regions arranged next to each other as in view of the emission side. A first emission region includes a first portion of the active zone and a second emission region including a second portion of the active zone. The emission regions are monolithically integrated in the semiconductor body. In a cross-section along a main extension plane of the active zone, the first portion of the active zone has an area at least twice as large as the second portion of the active zone.

Lighting device

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources spaced apart from each other at predetermined intervals on the substrate; a resin layer disposed on the substrate; a phosphor layer disposed on the resin layer and having a pattern layer including a concave portion and a convex portion formed on a surface facing the resin layer; and a diffusion layer disposed between the resin layer and the phosphor layer, wherein a thickness of the diffusion layer may be 10% or more and less than 50% of the maximum thickness of the phosphor layer.

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer that is formed on the first semiconductor layer and includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned in a random net shape; and a quantum well structure layer formed on the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlxGa1-xN (0 ≤ x ≤ 1). The at least one barrier layer has a composition of AlyGa1-yN (0 ≤ y < 1), and the composition x and the composition y satisfy a relation of x > y.

METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT AND DISPLAY DEVICE INCLUDING THE LIGHT EMITTING ELEMENT

A method of manufacturing a light emitting element, and a display device comprising the light emitting element are provided. The method of manufacturing a light emitting element comprises: preparing a lower panel comprising a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer comprising at least one mask pattern on at least a part of the lower panel, the at least one mask pattern having portions which are arranged so as to be spaced apart from each other, and an opening region between said portions of the mask pattern that are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.

OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Light emitting device

METHOD FOR LOCAL REMOVAL OF SEMICONDUCTOR WIRES

ПОЛУПРОВОДНИКОВАЯ СТРУКТУРА И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ СТРУКТУРЫ

... 1. Полупроводниковая структура (1), образованная из нитридов металлов III группы с кристаллической структурой вюрцита и выращенная в паровой фазе на полупроводниковой подложке (2, 3) с ориентацией (0001), включающая: ! нижний покрывающий слой (4); ! верхний покрывающий слой (5) с плоской верхней поверхностью (9), выращенный над нижним покрывающим слоем, причем постоянная решетки верхнего покрывающего слоя такая же, как постоянная решетки нижнего покрывающего слоя, и ! область рассеяния (6, 7), расположенную между нижним покрывающим слоем (4) и верхним покрывающим слоем (5), для рассеяния света, распространяющегося в полупроводниковой структуре (1), причем область рассеяния имеет коэффициент преломления, отличный от коэффициентов преломления покрывающих слоев, и неплоские поверхности для обеспечения рассеивающих свет границ раздела между областью рассеяния и покрывающими слоями, ! отличающаяся тем, что область рассеяния включает множество рассеивающих слоев (6, 7), причем составы и толщины ...

ПУЧКОВЫЕ ОПТО- И ФОТОЭЛЕКТРОННЫЕ ЭЛЕМЕНТЫ И ПРИБОРЫ И СПОСОБ ИХ ИЗГОТОВЛЕНИЯ

... 1. Пучковые опто- и фотоэлектронные элементы и приборы, характеризующиеся многослойной структурой с прокладочными слоями для электронных элементов с n-областью и р-областью, при этом электронные элементы выполнены из отдельных однотипных составляющих элементов - монослоев, образующих комбинации их взаимного расположения. 2. Пучковые опто- и фотоэлектронные элементы и приборы по п.1, характеризующиеся тем, что количество составляющих элементов-слоев равно N>1, где N - целое число. 3. Пучковые опто- и фотоэлектронные элементы и приборы по п.1, характеризующиеся тем, что в качестве прокладочных слоев выполнены оксидные зазоры. 4. Пучковые опто- и фотоэлектронные элементы и приборы по п.1, характеризующиеся тем, что толщина моноэлемента многослойной структуры или пучка волокон составляет d≪80 мкм. 5. Пучковые опто- и фотоэлектронные элементы и приборы по пп.1-4, характеризующиеся тем, что составляющие отдельные однотипные монослои n-области и р-области расположены параллельно в одних плоскостях ...

Lichtemittierende Diode und Herstellungsverfahren.

Optoelektronischer Halbleiterchip

Leuchtemittierende Vorrichtung und Verfahren zu deren Herstellung.

OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG VON OPTOELEKTRONISCHEN HALBLEITERBAUTEILEN

In einer Ausführungsform umfasst das optoelektronische Halbleiterbauteil (1) eine Vielzahl von Halbleitersäulen (3). An Seitenflächen (37) sind die Halbleitersäulen (3) mindestens zum Teil von einer elektrischen Trennschicht (2) umgeben. Eine Bestromung der Halbleitersäulen (3) erfolgt über mindestens eine erste elektrische Kontaktfläche (41) und mindestens eine zweite elektrische Kontaktfläche (42). Ein erster Teil der Halbleitersäulen (3) ist als Emittersäulen (5) zur Strahlungserzeugung und ein zweiter Teil als nicht strahlende elektrische Kontaktsäulen (4) gestaltet. Die Kontaktsäulen (4) verlaufen durch die Trennschicht (2) hindurch, sodass alle Kontaktflächen (41, 42) auf der gleichen Seite der Trennschicht (2) liegen. Die Kontaktsäulen (4) sind je mit einer elektrisch ohmsch leitenden Außenschicht (43) versehen.

A photon source and method of its fabrication and operation

DIRECTED EMISSION LIGHT EMITTING DIODE

... 1341221 Electroluminescence MOTOROLA Inc 6 Jan 1971 [16 Feb 1970] 631/71 Heading C4S [Also in Division H1] A light emitting diode source comprises a wafer of s/c material of one conductivity type and having planar top and bottom surfaces, mounting plate electrode 60, at least one interface 66 of opposite conductivity type material extending perpendicularly to the top surface and extending at least 1¢ mm. from that surface, the area of the PN-junction at the interface being substantially larger than the PN area in the bottom wall area of the cavity, an electrical bias across the junction providing the majority of light along the side walls and emitted from the top surface. A hole may be formed in the top surface and may be at least partially filled with opposite conductivity type material. Specified materials are GaAs, GaP, GaAs 1-x P x , Ga x Al 1-x As, and Ga x In 1-x P. Light is stated to emit most favourably from a PN-junction intersection with an external surface due to refractive index ...

Method for modification of built in potential of diodes

Light emitting device

A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.

High-brightness light emitting diode

A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.

Method for Fabricating a Vertical Light-Emitting Diode with High Brightness

A method for fabricating a vertical light-emitting diode comprises forming a stack including a plurality of epitaxial layers on a patterned first substrate, placing a second substrate on the stack, removing the first substrate to expose the first surface, planarizing a first surface of the stack that was in contact with the patterned first substrate and has a pattern corresponding to a pattern provided on the first substrate to form a planarized second surface, and forming a first electrode in contact with a side of the second substrate that is opposite to the stack, and a second electrode in contact with the second surface of the stack. A roughening step can be performed to form uneven surface portions on a region of the second surface for improving light emission through the second surface of the stack.

Optical Device

An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices.

Arrays of filled nanostructures with protruding segments and methods thereof

A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.

Semiconductor light emitting structure

A semiconductor light emitting structure includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and two electrodes. The substrate has a top surface and a bottom surface. The top surface is not parallel to the bottom light emitting surface of the active layer. The first semiconductor layer is disposed on the top surface. The active layer is disposed on at least one portion of the first semiconductor layer. The second semiconductor layer is disposed on the active layer. In an embodiment, the top surface can be realized by an oblique surface, a curved surface or a zigzag surface.

GaN FILM STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

A method of fabricating a gallium nitride (GaN) thin layer structure includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and define at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

Semiconductor light emitting device with light extraction structures

Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Diode-Based Devices and Methods for Making the Same

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

Elevated LED

The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.

Semiconductor light-emitting device and method of manufacturing the same

A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Semiconductor light-emitting device

To improve light extraction efficiency. A semiconductor light-emitting device wherein each layer is formed of a Group III nitride-based compound semiconductor. The light-emitting device comprises a sapphire substrate having a plurality of stripe-patterned grooves 11 arranged in parallel to a first direction (x axis) on a surface of the substrate 10 , a dielectric 15 discontinuously formed at least in the first direction on the surface 10 a of the sapphire substrate and in the grooves 11 , a base layer being grown on side surfaces of the grooves and made of a Group III nitride-based compound semiconductor covering the surface 10 a of the sapphire substrate and the top surfaces 15 a of the dielectrics 15 , and a device layer constituting a light-emitting device formed on the base layer.

Multicolored Light Converting LED With Minimal Absorption

Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed 1. A light emitting system , comprising:an LED emitting pump light of a first wavelength from an emission surface of the LED; and m first type potential wells that absorb the pump light and emit light of a second wavelength longer than the first wavelength, m being an integer greater than or equal to one; and', 'n second type potential wells that absorb the pump light and emit light of a third wavelength longer than the first wavelength and shorter than the second wavelength, n being an integer greater than m; and', 'at least one region in the semiconductor stack allowing a portion of the pump light of the first wavelength to exit the light emitting system without going through the first or second type potential wells., 'a semiconductor layer stack disposed on the emission surface of the LED, the semiconductor stack comprising2. The light emitting system of claim 1 , wherein m is equal to one.3. The light emitting system of claim 1 , wherein n is greater than or equal to 3.4. The light emitting system of claim 1 , further comprising a plurality of regions that allow pump light of the first wavelength to travel through the semiconductor layer stack without wavelength conversion.5. The light emitting system of claim 1 , wherein the semiconductor layer stack further comprises a plurality of absorbers for absorbing the pump light claim 1 , the absorbers being stacked adjacent the first and second type potential wells.6. The light emitting of claim 4 , wherein an absorber layer closer to the emission surface of the LED is thinner than an absorber layer further from the surface of the LED.7. The light emitting system of claim 1 , wherein the semiconductor layer stack further comprises a window layer located between the LED ...

P-type doping layers for use with light emitting devices

A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME

A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency. 145-. (canceled)46. A light emitting diode chip , comprising:a growth substrate having a first boundary; anda stack structure depositing on the growth substrate, wherein the stack structure comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer formed sequentially thereon, and the stack structure further having has a second boundary,wherein the light emitting diode chip is characterized by a connecting layer disposed on a top surface of the second semiconductor layer, and an interface between the connecting layer and the second semiconductor layer occupies 20-99% of the top surface of the second semiconductor layer, and a minimum horizontal distance between the first boundary and the second boundary is of more than about 3 μm to prevent cracking when stripping away the growth substrate from the stack structure.47. The light emitting diode chip of claim 46 , wherein the minimum horizontal distance is of more than about 10 μm.48. The light emitting diode chip of claim 46 , further comprising a passivation layer disposed on side walls of the light emitting layer and side walls of the first semiconductor layer.49. The light emitting diode chip of claim 48 , wherein the passivation layer is further disposed between the second semiconductor layer and the connecting layer claim 48 , wherein a portion of the connecting layer still directly contacts the second semiconductor layer.50. The light emitting diode chip of claim 46 , wherein the ...

DISPLAY DEVICE AND ELECTRONIC APPARATUS

A display panel including pixels disposed on a substrate, where each of the pixels includes a light emitting element, and a capacitor. The capacitor of a first one of the pixels is partially overlapped, in a vertical direction, by respective pixel areas of two of the pixels. The anode of the capacitor of the first one of the pixels may be disposed closer to the substrate than a cathode of the capacitor, thereby reducing a parasitic capacitance between the capacitor and an anode of the light emitting element of one of the two pixels overlapping the capacitor. 1. A display panel comprising a plurality of pixels disposed on a substrate , a light emitting element, and', 'a capacitor;, 'wherein each of the plurality of pixels includeswherein the capacitor of a first one of the plurality of pixels is partially overlapped, in a direction orthogonal to the substrate, by respective pixel areas of two of the plurality of pixels.2. The display panel of claim 1 , wherein the capacitor of the first one of the plurality of pixels is partially overlapped claim 1 , in a direction orthogonal to the substrate claim 1 , by respective first electrodes of the light emitting elements of the two of the plurality of pixels.3. The display panel of claim 2 , wherein the respective first electrodes of the light emitting elements of the two of the plurality of pixels are anode electrodes.4. The display panel of claim 1 , wherein the capacitor of the first one of the plurality of pixels is connected to a first electrode claim 1 , which is an anode electrode claim 1 , of the light emitting element thereof.5. The display panel of claim 4 , wherein the capacitor of the first one of the plurality of pixels is not connected to a first electrode claim 4 , which is an anode electrode claim 4 , of the light emitting element of any of the plurality of pixels other than the one of the plurality of pixels.6. The display panel of claim 4 , wherein the first one of the plurality of pixels is also one of the ...

ARRAY SUBSTRATE, LIQUID CRYSTAL PANEL AND DISPLAY DEVICE

Embodiments of the present invention disclose an array substrate, a liquid crystal panel and a display device. In the array substrate according to an embodiment of the present invention, each part of the pixel electrode constituting the pixel unit is contained within one structural unit, and slits of different parts of the pixel electrodes, which constitute different pixel units, within the structural unit have the same inclining direction, and therefore the transmissivity of the pixel unit can be increased. 1. An array substrate , comprising:a plurality of gate lines parallel to each other and a plurality of data lines parallel to each other, two gate lines adjacent to each other and two data lines adjacent to each other defining a structural unit; anda plurality of pixel units, one of the pixel units comprising:a first part pixel electrode having first slits and a second part pixel electrode having second slits, which are located within the structural units on two sides of a gate line, respectively, the first part pixel electrode and the second part pixel electrode being electrically connected;wherein, within a first structural unit to which the first part pixel electrode belongs, a third part pixel electrode having third slits is disposed in a region without the first part pixel electrode; an inclining direction of the third slits and an inclining direction of the first slits are the same, and the third part pixel electrode and the first part pixel electrode are electrically separated from each other; andwithin a second structural unit to which the second part pixel electrode belongs, a fourth part pixel electrode having fourth slits is disposed in a region without the second part pixel electrode; an inclining direction of the fourth slits and an inclining direction of the second slits are the same, and the fourth part pixel electrode and the second part pixel electrode are electrically separated from each other.2. The array substrate according to claim 1 , ...

ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

In an array substrate capable of improving the quality of displayed images and a method for manufacturing the array substrate, the array substrate includes a base substrate, a first conductive pattern including a gate line and a first light-blocking pattern, a semiconductor layer overlapping the light-blocking pattern, a second conductive pattern including a data line and a storage line overlapping the first light-blocking pattern, and a pixel electrode overlapping the storage line to form a storage capacitor. The first conductive pattern may further include a second light-blocking pattern overlapping the semiconductor layer which is formed under the data line. The first and second light-blocking patterns block light proceeding toward the semiconductor layer formed under the storage line and under the data line, respectively, so that the semiconductor layer may be prevented from being excited by light energy. 1. A method for manufacturing an array substrate , the method comprising:forming a first conductive layer on a base substrate and patterning the first conductive layer to form a first conductive pattern including a gate line and a first light-blocking pattern;forming a semiconductor layer and a second conductive layer on the first conductive pattern;patterning the second conductive layer and the semiconductor layer to form a second conductive pattern and a pattern of the semiconductor layer overlapping the first light-blocking pattern, the second conductive pattern including a data line extending in a second direction crossing a first direction defining an extension direction of the gate line and a storage line overlapping the first light-blocking pattern; andforming a pixel electrode on the second conductive layer, the pixel electrode overlapping the storage line.2. The method of claim 1 , wherein the semiconductor layer is in contact with the storage line.3. The method of claim 2 , wherein the semiconductor layer is patterned so that a first end portion of ...

DISPLAY APPARATUS

Provided is a display apparatus and a method of manufacture. The display apparatus includes a first substrate with a plurality of organic electroluminescence devices, a second substrate with a color filter, the second substrate facing the first substrate, and an adhesive layer disposed between the first substrate and the second substrate so as to cover the plurality of organic electroluminescence devices, the adhesive layer being made of a material selected from the group consisting of a phenol resin, a melanin resin, an unsaturated polyester resin, an epoxy resin, a silicon resin and a polyurethane resin. 1. A display apparatus comprising:a first substrate with an EL layer including a plurality of organic electroluminescence devices;a second substrate with a color filter, the second substrate facing the first substrate;a fixing portion made of a curing resin that is bonded between the first and second substrates, and that is provided along at least a portion of an outer perimeter of the EL layer.2. The display apparatus according to claim 1 , wherein the curing resin is an ultraviolet curing resin.3. The display apparatus according to claim 1 , wherein the fixing portion is provided along each side of the outer perimeter of the EL layer.4. The display apparatus according to claim 1 , wherein at least a portion of the outer perimeter of the EL layer does not include the fixing portion.5. The display apparatus according to claim 1 , further comprising an insulating layer formed between adjacent organic electroluminescence devices claim 1 , and formed between the EL layer and the fixing layer.6. The display apparatus according to claim 1 , wherein the fixing layer has a crescent shape.7. The display apparatus according to claim 6 , wherein the fixing layer has a concave inner surface that faces the EL layer.8. The display apparatus according to claim 1 , further comprising an adhesive layer disposed between the first substrate and the second substrate so as to contact ...

THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE

The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor according to the present invention has a gate electrode formed on a substrate , an insulating layer formed on the gate electrode , a microcrystalline amorphous silicon layer and an amorphous silicon layer that are formed on the insulating layer , a semiconductor layer containing an impurity formed on the amorphous silicon layer , and a source electrode A and a drain electrode B that are formed on the semiconductor layer containing an impurity. The microcrystalline amorphous silicon layer and the semiconductor layer containing an impurity are connected to each other through the amorphous silicon layer without being in direct contact with each other. 1. A thin film transistor , comprising:a gate electrode formed on a substrate;an insulating layer formed so as to cover said gate electrode;a microcrystalline amorphous silicon layer and an amorphous silicon layer that are formed on said insulating layer;a semiconductor layer containing an impurity formed on said amorphous silicon layer; anda source electrode and a drain electrode that are formed on said semiconductor layer containing an impurity,wherein said microcrystalline amorphous silicon layer and said semiconductor layer containing an impurity are connected to each other through said amorphous silicon layer without being in direct contact with each other,wherein said semiconductor layer containing the impurity includes a first contact portion that is in contact with said source electrode and a second contact portion that is in contact with said drain electrode, andwherein when viewed in a cross-section that is normal to a plane of said substrate and that cuts across said source electrode and said drain electrode, a width of said microcrystalline amorphous silicon layer is narrower than a width of a space between said first contact portion and said ...

DEPOSITION APPARATUS AND DEPOSITION METHOD

A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode. 1. A light-emitting device comprising:a transistor comprising an interlayer insulating film over a substrate, the interlayer insulating film comprising an opening;a pixel electrode electrically connected to the transistor, the pixel electrode overlapping with the opening; a first region comprising a first compound over the pixel electrode;', 'a second region comprising a second compound over the first region; and', 'a third region comprising the first compound and the second compound between the first region and the second region; and, 'an organic compound layer over the pixel electrode, the organic compound layer comprisinga cathode over the organic compound layer,wherein the second compound is an organic compound having a hole transporting property.2. The light-emitting device according to claim 1 , wherein the first compound is an organic compound having a hole injecting property.3. The light-emitting device according to claim 1 , wherein the interlayer insulating film is formed at opposite ends of the pixel electrode.4. The light-emitting device according to claim 1 , wherein the third region functions as a mixed region.5. The light-emitting device according to claim 1 , wherein the organic compound layer emits a light from a region overlapping with the opening.6. A display device comprising the light-emitting device according to .7. A light-emitting device comprising:an insulating film over a ...

LIGHT-EMITTING DEVICES WITH VERTICAL LIGHT-EXTRACTION MECHANISM

A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. 1. A light-emitting device comprising:a n-type layer;a p-type layer;an light-emitting layer sandwiched between the n-type layer and the p-type layer; anda lattice structure comprising sheet-shaped sidewalls which penetrate the light-emitting layer but do not completely penetrate the p-type layer, and divide the light-emitting layer into a plurality of area units.2. The light-emitting device of claim 1 , wherein the area units are completely isolated from each other by the sheet-shaped sidewalls of the lattice structure.3. The light-emitting device of claim 2 , wherein the sheet-shaped sidewalls of the lattice structure penetrate the n-type layer and divide the n-type layer into a plurality of area units.4. The light-emitting device of claim 3 , further comprising a conductive layer deposited adjacent to and in direct contact with the n-type layer and being in electrical connection with each of the area units of the n-type layer.5. The light-emitting device of claim 1 , wherein the lattice structure extends into the p-type layer.620. The light-emitting device of claim 1 , wherein the area units are partially separated from each other by the sheet-shaped sidewalls claim 1 , and an enclosure ...

LIQUID CRYSTAL PANEL SUBSTRATE, LIQUID CRYSTAL PANEL, AND ELECTRONIC DEVICE AND PROJECTION DISPLAY DEVICE USING THE SAME

In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance. 118-. (canceled)19. A substrate for a display panel , comprising:a plurality of reflective parts that are formed in a pixel region, each of the plurality of reflective parts being positioned at a first position corresponding to one pixel of a plurality of pixels;a plurality of first switching elements that are formed in the pixel region, each of the plurality of first switching elements being positioned at a second position corresponding to one pixel of the plurality of pixels;a metal layer that overlaps at least a part of one first switching element of the plurality of first switching elements;a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second switching elements; anda wire that is positioned in the driving circuit, the wire being electrically connected to one second switching element of the plurality of second switching elements.20. The substrate according to claim 19 ,the metal layer being formed in a first layer in which the wire is formed.21. The substrate according to claim 19 ,a material constituting the metal layer being identical with a material constituting the wire.22. The substrate according to claim 19 ,the plurality of first switching elements being a plurality of first transistors,a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.23. A display panel comprising:{'claim-ref': {'@ ...

TFT-LCD ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a gate line and a data line formed on a base substrate. The gate line and the data line intersect with each other to define a pixel region, in which a pixel electrode and a thin film transistor (TFT) are formed, and a first insulating layer and a second insulating layer are interposed between the gate line and the data line, and the pixel electrode is disposed between the first insulating layer and the second insulating layer. A method of manufacturing a TFT-LCD is also disclosed. 1. A method of producing a thin film transistor liquid crystal display (TFT-LCD) array substrate , comprising:depositing a gate metal thin film on a base substrate and patterning the gate metal film to form a gate line and a gate electrode;sequentially depositing a first insulating layer and a transparent conductive thin film on the base substrate and patterning the transparent conductive thin film to form a pixel electrode;sequentially depositing a second insulating layer, a semiconductor thin film and a doped semiconductor thin film on the base substrate and patterning the second insulating layer, the semiconductor thin film and the doped semiconductor thin film to form an active layer island and an insulating layer through hole in the second insulating layer, wherein the insulating layer through hole is located over the pixel electrode; anddepositing a source/drain metal thin film on the base substrate and patterning the source/drain metal thin film to form a data line, a source electrode, a drain electrode and a TFT channel region, wherein the drain electrode is connected with the pixel electrode via the insulating layer through hole, and the doped semiconductor layer in the TFT channel region is completely etched to expose the underlying semiconductor thin film.2. The method of producing a TFT-LCD array substrate according to claim 1 , wherein the forming of the active layer island and the insulating ...

Light-emitting diode element, method for manufacturing light guide structure thereof and equipment for forming the same

A light-emitting diode (LED) element is provided. The LED element includes a substrate, a diode structure layer and several light-guide structures. The light-guide structures are formed on at least one of the substrate and the diode structure layer. Each light-guide structure has an inner sidewall, and several spiral slits formed on the inner side wall.

Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. 1. An apparatus , comprising:a base comprising a plurality of spaced-apart channels;a plurality of first conductors coupled to the base, each first conductor in a corresponding channel of the plurality of spaced-apart channels;a plurality of diodes coupled to the plurality of first conductors;a plurality of second conductors coupled to the plurality of diodes; anda plurality of substantially spherical lenses having at least a first index of refraction, the plurality of substantially spherical lenses suspended in a first polymer having at least a second, different index of refraction.2. The apparatus of claim 1 , wherein the plurality of diodes are substantially spherical claim 1 , substantially toroidal claim 1 , substantially cylindrical claim 1 , substantially faceted claim 1 , substantially rectangular claim 1 , substantially flat claim 1 , or substantially elliptical.3. The apparatus of claim 1 , wherein about fifteen percent to fifty-five percent of a surface of each ...

Light emitting diode

A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Display unit and method of manufacturing the same, electronic apparatus, illumination unit, and light-emitting device and method of manufacturing the same

A display unit includes: a plurality of light-emitting devices; and a separation section disposed between any adjacent two of the plurality of light-emitting devices and including a photoexcited material. A light-emitting device includes: an excitation light source; a wavelength conversion layer converting excitation light emitted from the excitation light source into light of a wavelength different from a wavelength of the excitation light; and a wavelength selection film disposed on a surface farther from the excitation light source of the wavelength conversion layer.

Optoelectronic Structures with High Lumens Per Wafer

An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. 1. An optoelectronic structure , comprising:a wafer;a plurality of light emitting diode structures on a surface of the wafer, the light emitting diode structures comprising a common epitaxial structure; anda coating comprising a wavelength conversion material on the plurality of light emitting diode structures, wherein the light emitting diode structures and the coating are configured to collectively emit white light in response to electrical energy supplied to the light emitting diode structures;wherein the light emitting diode structures, when singulated, are configured to generate an aggregate light output in excess of 800,000 lumens.2. The optoelectronic structure of claim 1 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 825 claim 1 ,000 lumens.3. The optoelectronic structure of claim 2 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 862 claim 2 ,500 lumens.4. The optoelectronic structure of claim 3 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 1 claim 3 ,000 claim 3 ,000 lumens.5. The optoelectronic structure of claim 4 , wherein the light emitting diode structures are configured to generate an aggregate light output in excess of 1 claim 4 ,250 claim 4 ,000 lumens.6. The optoelectronic structure of claim 1 , wherein the wafer comprises an ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A nitride semiconductor light-emitting element is a nitride semiconductor light-emitting element which has a multilayer structure , the multilayer structure including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure has a light extraction surface which is parallel to an m-plane in the nitride semiconductor active layer and light extraction surfaces which are parallel to a c-plane in the nitride semiconductor active layer . The ratio of an area of the light extraction surfaces to an area of the light extraction surface is not more than 46%. 1. A nitride semiconductor light-emitting element comprising a multilayer structure , the multilayer structure including an active layer made of an m-plane nitride semiconductor ,wherein the multilayer structure has a first light extraction surface which is parallel to an m-plane in the active layer and a plurality of second light extraction surfaces which are parallel to a c-plane in the active layer, anda ratio of an area of the second light extraction surfaces to an area of the first light extraction surface is not more than 46%.2. The nitride semiconductor light-emitting element of claim 1 , whereinthe multilayer structure has one or a plurality of third light extraction surfaces, andthe one or plurality of third light extraction surfaces are inclined with respect to a normal direction of the first light extraction surface.3. The nitride semiconductor light-emitting element of claim 2 , wherein the one or plurality of third light extraction surfaces are inclined by 30° with respect to the normal direction of the first light extraction surface.4. The nitride semiconductor light-emitting element of claim 1 , wherein the multilayer structure includesa substrate which has a first surface and a second surface, the second surface being provided on an opposite side to the first surface, anda plurality of nitride-based semiconductor layers provided on the first surface of the substrate, the ...

Light-emitting diode architectures for enhanced performance

The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

FILTER LAYER SUBSTRATE AND DISPLAY APPARATUS

A filter layer substrate comprises a substrate, a black matrix layer, a filter layer, a protection layer, a first photoresist spacer, and a second photoresist spacer. The black matrix layer is disposed on the substrate. The filter layer covers the substrate and the black matrix layer. The protection layer is disposed on the filter layer. The first photoresist spacer is disposed on the protection layer corresponding to the black matrix layer. The second photoresist spacer is disposed on the protection layer corresponding to the black matrix layer. A bottom surface of the first photoresist spacer and a bottom surface of the second photoresist spacer have a height difference. A display apparatus containing the filter layer substrate is also disclosed. Accordingly, the liquid crystal margin of the LC filling can be enlarged, and the problems caused by the stress and the external collision or vibration can be avoided. 1. A display apparatus , comprising:a filter layer substrate comprising:a substrate;a black matrix layer disposed on the substrate;a filter layer covering the substrate and the black matrix layer;a protection layer disposed on the filter layer;a first photoresist spacer disposed on the protection layer and corresponding to the black matrix layer; anda second photoresist spacer disposed on the protection layer and corresponding to the black matrix layer, wherein a bottom surface of the first photoresist spacer and a bottom surface of the second photoresist spacer have a height difference.2. The display apparatus as recited in claim 1 , wherein the filter layer has at least one opening for exposing a surface of the black matrix layer claim 1 , the protection layer covers the filter layer and the black matrix layer and has a recess corresponding to the opening claim 1 , and the second photoresist spacer is disposed in the recess.3. The display apparatus as recited in claim 1 , wherein the thickness of the first photoresist spacer is the same as that of the ...

ACTIVE MATRIX SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE

An active matrix substrate includes: an electrode layer formed on the insulating substrate within a display region; a mark disposed on the insulating substrate within a non-display region, and made of a same material as the electrode layer; a first insulating film directly covering each of the electrode layer and the mark; and a second insulating film covering a part of the first insulating film. Within at least a part of the sealing region, the second insulating film is removed from the insulating substrate. The mark is disposed in the at least the part of the sealing region in which the second insulating film is removed, and is provided to overlap at least a part of the sealing region. A protective film is formed on the insulating substrate to cover a side surface and a surface of the first insulating film covering the mark, the surface of the first insulating film being located opposite from the insulating substrate. 2. The active matrix substrate of claim 1 , whereinwithin the display region, a transparent conductive film is formed on a surface of the second insulating film, andthe protective film is made of a same material as the transparent conductive film.3. The active matrix substrate of claim 1 , whereinthe first insulating film is made of an inorganic insulating film, andthe second insulating film is made of an organic insulating film.4. The active matrix substrate of claim 1 , whereina semiconductor layer is disposed between the protective film and the first insulating film covering the mark.5. The active matrix substrate of claim 1 , whereinthe protective film directly covers the first insulating film covering the mark.6. The active matrix substrate of claim 1 , whereinthe mark is an alignment mark used for alignment between the active matrix substrate and the counter substrate.7. A display device claim 1 , comprising:a first substrate;a second substrate disposed to face the first substrate;a frame-shaped sealing member disposed between the first ...

Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces

A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE IMAGE DISPLAY DEVICE

There is provided a method for manufacturing a flexible semiconductor device. The manufacturing method of the flexible semiconductor device of the present invention comprising the steps of: forming a gate electrode; forming a gate insulating film so that the gate insulating film contacts with the gate electrode; forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode; forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; forming vias in the flexible film layer; forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; and subjecting the first metal layer to a processing treatment to form a wiring from a part of the first metal layer, wherein, in the step of the processing treatment of the first metal layer, the wiring is formed in a predetermined position by using at least one of the vias as an alignment marker. 1. A method for manufacturing a flexible semiconductor device , comprising the steps of:forming a gate electrode;forming a gate insulating film so that the gate insulating film contacts with the gate electrode;forming a semiconductor layer on the gate insulating film such that the semiconductor layer is opposed to the gate electrode;forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer;forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes;forming vias in the flexible film layer;forming a first metal layer by disposing a metal foil onto the flexible film layer, and thereby a semiconductor device precursor is provided; andsubjecting the first metal layer to a processing treatment to form a ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a substrate, and a plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region. The plurality of light-emitting elements satisfy at least one of a first condition and a second condition. The first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm. The second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V. 1. A light-emitting device , comprising:a substrate; anda plurality of light-emitting elements that are mounted on the substrate and each emit light within a same color region,wherein the plurality of light-emitting elements satisfy at least one of a first condition and a second condition,wherein the first condition is that a maximum deviation in peak wavelength of light emitted from the plurality of light-emitting elements is not less than 1.25 nm, and wherein the second condition is that a maximum deviation in threshold voltage of the plurality of light-emitting elements is not less than 0.05 V.2. The light-emitting device according to claim 1 , wherein the peak wavelength of lights emitted from the plurality of light-emitting elements is in a range of 380 to 435 nm claim 1 , 435 to 480 nm claim 1 , 480 to 500 nm claim 1 , 500 to 570 nm claim 1 , 570 to 590 nm claim 1 , 590 to 620 nm or 620 to 750 nm.3. The light-emitting device according to claim 1 , further comprising:a reflector on the substrate to reflect the light emitted from the plurality of light-emitting elements.4. The light-emitting device according to claim 1 , wherein in the first condition the maximum deviation in peak wavelength is not more than 7.5 nm.5. The light-emitting device according to claim 1 , wherein in the first condition the maximum deviation in peak wavelength is not less than 2.5 nm.6. The light-emitting device according ...

LIGHTING DEVICE

In a first aspect of the present invention, a lighting device including a metal plate, an electrical insulation layer that is smaller in size than an outline of the metal plate and arranged on an upper surface of the metal plate, a light-emitting element mounted on the electrical insulation layer, and a first connecting electrode and a second connecting electrode electrically connected to the light-emitting element and arranged on the electrical insulation layer. 1. A lighting device , comprising:a metal plate;an electrical insulation layer that is smaller in size than an outline of the metal plate and arranged on an upper surface of the metal plate;a light-emitting element mounted on a the electrical insulation layer;a first connecting electrode and a second connecting electrode electrically connected to the light-emitting element and arranged on the electrical insulation layer.2. The lighting device according to claim 1 , whereinthe electrical insulation layer is square in shape on the upper surface of the metal plate.3. The lighting device according to claim 1 , whereinthe electrical insulation layer is rectangular in shape on the upper surface of the metal plate.4. The lighting device according to claim 1 , whereinthe metal plate comprises an aluminum plate.5. The lighting device according to claim 1 , whereinthe electrical insulation layer comprises a ceramic ink layer.6. The lighting device according to claim 1 , whereinthe light-emitting element at a lower surface of the light-emitting element is in contact with the electrical insulation layer.7. The lighting device according to claim 6 , whereinthe lower surface of the light-emitting element is buried in the electrical insulation layer.8. The lighting device according to claim 1 , whereinthe upper surface of the metal plate appears around a periphery of the electrical insulation layer.9. The lighting device according to claim 5 , whereinthe metal plate further comprises a cut portion cut into a periphery of ...

ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE

An electroluminescent element () is provided with: a lamination section in which a first conductive layer (), a dielectric layer (), a second conductive layer (), a light-emitting layer () and a third conductive layer () are laminated in order; and contact holes () for at least penetrating through the dielectric layer () and electrically connecting the first conductive layer () and the second conductive layer (). When viewed from the light-emitting surface side, the electroluminescent element () (i) has at least one continuous light-emitting region, and (ii) the number of contact holes () is 10or more per one light-emitting region and such that the ratio of the area of the contact holes () to the area of the light-emitting region is 0.1 or less. Thus, it is possible to provide an electroluminescent element, etc., that is easily manufactured and has high light emission uniformity. 1. An electroluminescent element comprising:a lamination section in which a first conductive layer, a dielectric layer, a second conductive layer, a light-emitting layer and a third conductive layer are laminated in order; andcontact holes that penetrate through at least the dielectric layer to electrically connect the first conductive layer and the second conductive layer, wherein, as viewed from a light-emitting surface side,(i) at least one continuous light-emitting region is provided, and{'sup': '2', '(ii) a number of the contact holes is not less than 10per the one light-emitting region and a ratio of an area of the contact holes to an area of the light-emitting region is not more than 0.1.'}2. The electroluminescent element according to claim 1 , wherein the ratio of the area of the contact holes to the area of the light-emitting region is 0.001 to 0.1.3. The electroluminescent element according to claim 1 , wherein a diameter of a minimum circle enclosing a shape of each contact hole as viewed from the light-emitting surface side is 0.01 μm to 2 μm.4. The electroluminescent element ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE

A semiconductor light-emitting device () includes an LED chip (), a lead () having a main surface () on which the LED chip () is mounted, and a resin package () covering the LED chip (). The main surface () is roughened, and the main surface () is held in contact with the resin package (). These configurations contribute to the downsizing of the semiconductor light-emitting device (). 1. A semiconductor light-emitting device comprising:a semiconductor light-emitting element;a first lead including a first main surface on which the semiconductor light-emitting element is mounted; anda resin package covering the semiconductor light-emitting element;wherein the first main surface is roughened, andthe first main surface and the resin package are held in contact with each other.2. The semiconductor light-emitting device according to claim 1 , wherein the first main surface includes a plated layer claim 1 , and the plated layer is formed with a rough surface.3. The semiconductor light-emitting device according to claim 2 , wherein the plated layer is an Ag-plated layer.4. The semiconductor light-emitting device according to claim 1 , wherein the first lead includes a first mounting terminal face located on a side opposite to the first main surface and exposed from the resin package.5. The semiconductor light-emitting device according to claim 4 , wherein the first lead includes a plurality of first side faces extending in a direction in which the first main surface and the first mounting terminal face are separated from each other claim 4 , and at least a part of each of the first side faces is covered with the resin package.6. The semiconductor light-emitting device according to claim 5 , wherein the first lead includes a first drawn-out portion extending from the first side face and provided with a leading end face exposed from the resin package.7. The semiconductor light-emitting device according to claim 4 , wherein the first lead includes a first buried surface ...

STEREOSCOPIC IMAGE DISPLAY SUBSTRATE

A stereoscopic image display substrate includes a base substrate, a data line, a plurality of gate line parts and a pixel electrode part. The data line is disposed on the base substrate. The data line extends in a first direction. The gate line parts are disposed on the base substrate. Each gate line part includes a plurality of gate lines extending in a second direction different from the first direction. The gate lines are adjacent to each other. The pixel electrode part is disposed between the gate line parts. The pixel electrode part includes at least three pixel electrodes connected to the data line. 1. A stereoscopic image display substrate comprising:a base substrate;a data line disposed on the base substrate, the data line extending in a first direction;a plurality of gate line parts disposed on the base substrate, each gate line part including a plurality of gate lines extending in a second direction different from the first direction, the gate lines being adjacent to each other; anda pixel electrode part disposed between the gate line parts, the pixel electrode part including at least three pixel electrodes connected to the data line.2. The stereoscopic image display substrate of claim 1 , wherein the gate line parts comprises a first gate line part and a second gate line part claim 1 , and the plurality of gate lines of the first gate line part are adjacent to each other claim 1 , and the plurality of gate lines of the second gate line part are adjacent to each other.3. The stereoscopic image display substrate of claim 1 , wherein the gate line parts comprises a first gate line part and a second gate line part claim 1 , and the first gate line part is disposed adjacent to a first side of the pixel electrode part claim 1 , andwherein the second gate line part is disposed adjacent to a second side of the pixel electrode part.4. The stereoscopic image display substrate of claim 1 , wherein each of the pixel electrodes comprises a width in the first direction ...

PRINTED LIGHT EMITTING DEVICES AND METHOD FOR FABRICATION THEROF

An array of light emitting devices and a method for large area fabrication of such is provided. The method includes providing a continuous flexible substrate and printing one or more layers of light emitting devices comprised of layers of transparent conductor, light emitting material, dielectric and electrode on the flexible substrate. The array of light emitting devices includes a flexible substrate and one or more layers of light emitting devices on the flexible substrate. The one or more layers of light emitting devices include layers of transparent conductor, light emitting material, dielectric and electrode. 1. A method for large area fabrication of an array of light emitting devices , the method comprising the steps of:providing a continuous flexible substrate; andprinting one or more layers of light emitting devices comprised of layers of transparent conductor, light emitting material, dielectric and electrode on the flexible substrate.2. The method in accordance with wherein the step of printing one or more devices comprises:printing first devices having the transparent conductor printed on the flexible substrate, with the other layers of the first devices printed as light emitting material on the transparent conductor, dielectric on the light emitting material, and electrode on the dielectric; andprinting second devices having the electrode printed on the flexible substrate, with the other layers of the second devices printed as dielectric on the electrode, light emitting material on the dielectric, and transparent conductor on the light emitting material.3. The method in accordance with further comprising:printing a layer of adhesive on the top most layer of the one or more layers of light emitting devices.4. The method in accordance with wherein the one or more layers of light emitting devices are two layers of light emitting devices claim 3 , the method further comprising:laminating the two layers of light emitting devices using the adhesive.5. The ...

ARRAY SUBSTRATE AND MANUFACTURING METHOD

Manufacturing an array substrate includes forming data and gate lines which cross and a gate electrode on a substrate. The data line is discontinuously disposed to be separated from the gate line, or the gate line is discontinuously disposed to be separated from the data line. Active and gate insulating layers including bridge and source electrode vias are formed on the substrate. The bridge vias correspond to adjacent discontinuous sections of the data line or the gate line. The source electrode via corresponds to the data line. Pixel, source, and drain electrodes and a bridge line are formed on the substrate. The pixel electrode and the drain electrode are integral. The source electrode is connected to the data line through the source electrode via. The bridge line connects adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line through bridge vias. 1. An array substrate , comprising:a base substrate,a data line and a gate line crossed with each other on the base substrate so as to define a pixel unit, anda pixel electrode and a thin film transistor (TFT) arranged in the pixel unit,wherein the TFT comprises a gate electrode, an active layer, a source electrode and a drain electrode, the data line and the gate line are formed in the same layer, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line is discontinuously disposed so as to be separated from the data line;bridge via holes and a source electrode via hole are formed in a gate insulating layer covering the data line, the gate line and the gate electrode, and the bridge via holes are located at positions respectively corresponding to adjacent discontinuous sections of the data line or adjacent discontinuous sections of the gate line, and the source electrode via hole corresponds to the data line; andthe source electrode, the drain electrode, the pixel electrode and the bridge line are formed in the same layer, and ...

Light-emitting diode device

The present invention is directed to a light-emitting diode (LED) device, which includes at least one LED unit. Each LED unit includes at least one LED, which includes a first doped layer, a second doped layer and a conductive defect layer. The conductive defect layer is formed on the first or second doped layer. The conductive defect layer may be deposited between two LEDs, or between the first/second doped layer and an electrode.

LIGHT EMITTING DIODE PACKAGE HAVING INTERCONNECTION STRUCTURES

A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively in four corners of the substrate out of the mounting area. The first interconnection electrode is embedded in the substrate to electrically connect the first and the third electrodes. The first LED chip and the second LED chip are arranged in the mounting area. Each LED chip includes an anode pad and a cathode pad. The first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips. 1. A light emitting diode (LED) package comprising:a substrate comprising a first electrode, a second electrode, a third electrode, a fourth electrode, and an interconnection electrode, a mounting area defined at center of a top surface of the substrate, the first to fourth electrodes respectively positioned in four corners of the substrate out of the mounting area and exposed from the top surface of the substrate, the first interconnection electrode embedded in the substrate to electrically connect the first and the third electrodes; anda first LED chip and a second LED chip arranged on the mounting area, each LED chip comprising an anode pad and a cathode pad;wherein the first to fourth electrodes are respectively connected to the four pads of the first and the second LED chips via a plurality of metal wires, and no metal wire connection is formed between the first and the second LED chips.2. The LED package of claim 1 , wherein the first to fourth electrodes have top surfaces coplanar to the top surface of the substrate.3. The LED package of claim 1 , wherein the first and the fourth electrodes extend from the top surface to a ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE

In a semiconductor light emitting element having a sapphire substrate , and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate , the sapphire substrate includes a substrate top surface , a substrate bottom surface , first substrate side surfaces and second substrate side surfaces ; plural first cutouts and plural second cutouts are provided at a border between the first substrate side surface , the second substrate side surface and the substrate top surface ; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface , first lower semiconductor side surfaces and second lower semiconductor side surfaces ; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface ; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface 1. A semiconductor light emitting element having a substrate and a semiconductor layer , which includes a light emitting layer that emits light by current flow and is laminated on the substrate , wherein:the substrate includes a substrate top surface on which the semiconductor layer is laminated, a substrate bottom surface provided on an opposite side of the substrate top surface, and a substrate side surface formed to enclose limbs of the substrate top surface and the substrate bottom surface, and is provided with a plurality of cutouts, which are formed by cutting out a part of the substrate and are arranged at intervals along a border between the substrate top surface and the substrate side surface;the semiconductor layer includes a semiconductor bottom surface provided in contact with the substrate top surface, a semiconductor top surface provided on an opposite side of the semiconductor bottom surface, and a semiconductor side surface provided to enclose limbs of the semiconductor bottom surface and the ...

Method for Manufacturing Light-Emitting Device

A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon. 120-. (canceled)21. A method for manufacturing a light-emitting device , the light-emitting device having at least a first light emitting element emitting a first color and a second light emitting element emitting a second color different from the first color , comprising steps of:forming a layer containing an organic compound over a conductive-surface plate in a first film-formation chamber;forming a first material layer of the first light emitting element over a substrate having a first electrode in a second film-formation chamber;forming a first material layer of the second light emitting element over the substrate having the first electrode in the second film-formation chamber;holding the substrate and the conductive-surface plate in a third film-formation chamber to make the first material layers and the layer containing the organic compound face each other with a mask interposed therebetween;evaporating the layer containing the organic compound formed over the conductive-surface plate by heating the conductive-surface plate so that a second material layer containing the ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light. 1. A semiconductor light emitting device comprising:a substrate;a first semiconductor layer on the substrate;a plurality of light emitting structures, each light emitting structure comprising a portion of the first semiconductor layer on the substrate, an active layer on the portion of the first semiconductor layer, and a second semiconductor layer on the active layer;a plurality of transparent electrodes on the respective second semiconductor layers of the plurality of light emitting structures;a first electrode on a portion of the first semiconductor layer; anda second electrode comprising a first set of divided electrodes, the first set of divided electrodes configured to contact the plurality of transparent electrodes and electrically interconnect to each other.2. The semiconductor light emitting device according to claim 1 , wherein the transparent electrode includes at least one selected from the group consisting of RuO claim 1 , TiO claim 1 , IrO claim 1 , and GaO.3. The semiconductor light emitting device according to claim 1 , wherein the first set of divided electrodes of the second electrode each comprises:an ohmic contact layer configured to contact a portion of each of the plurality of transparent electrodes; anda reflective layer configured to contact the ohmic contact layer.4. The semiconductor light emitting device according to claim 3 , wherein the ohmic contact layer includes at least one of Ti or Cr.5. The semiconductor light emitting device according to claim 1 , wherein the first electrode comprises a second ...

LIGHT-EMITTING DEVICE

A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first part of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer;; and a first electrode formed on the first portion of the first transparent conductive oxide layer. 1. A light-emitting device comprising:a light-emitting stacked layer having first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;a planarization layer formed on a first part of the second conductivity type semiconductor layer; anda transparent conductive oxide layer formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer.2. The light-emitting device according to claim 1 , further comprising an electrode formed on the first portion of the transparent conductive oxide layer.3. The light-emitting device according to claim 1 , further comprising a second ...

LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED. 1. A light emitting diode , comprising:a sapphire substrate;an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence;wherein, a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer.2. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the cone-shaped structures are rectangular pyramid structures.3. The light emitting diode as claimed in claim 2 , characterized in that claim 2 , the rectangular pyramid structure has a square base and four isosceles triangular faces having the same dimension claim 2 , adjacent rectangular pyramid structures sharing one edge claim 2 , the included angle between adjacent rectangular pyramid structures being 60˜120 degrees.4. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the cone-shaped structures are triangular pyramid structures claim 1 , hexagonal pyramid structures claim 1 , octagonal pyramid structures or circular cone structures.5. The light emitting diode as claimed in claim 1 , characterized in that claim 1 , the light emitting diode further comprises a buffer ...

Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same

The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

Solid State Light Sheet Having Wide Support Substrate and Narrow Strips Enclosing LED Dies in Series

A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate. 120-. (canceled)21. An illumination device comprising: a non-packaged light-emitting diode (LED) die having a top electrode and a bottom electrode formed on opposite surfaces of the LED die;', 'a cup including an indentation, the indentation having substantially the same height as the LED die and at least a reflective surface, wherein the LED die is disposed in the indentation;, 'a light-emitting element, the light-emitting element comprisinga transparent top substrate having a first surface and a second surface opposing the first surface, wherein the first surface of the top substrate faces the light-emitting element; andfirst electrical conductors disposed on the first surface of the top substrate such that the top electrode of the LED die is in contact with the first electrical conductors, wherein the first electrical conductors are configured to provide power to the LED die.22. The illumination device of claim 21 , further comprising:a bottom substrate having a third surface; andsecond electrical conductors disposed on the third surface of the bottom substrate such that the bottom electrode of the LED die is coupled to the second electrical conductors, wherein the second electrical conductors are configured to provide power to the LED die.23. The illumination device ...

ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING COVERED LOWER ELECTRODE

An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode. 1. A light emitter , comprising:a transparent electrode disposed on an end surface of a light guide member;a light emitting layer disposed on the transparent electrode; anda metal electrode disposed on the light emitting layer,wherein a portion of the metal electrode is disposed on a portion of the transparent electrode, andwherein the metal electrode is larger than the transparent electrode.2. The light emitter of claim 1 , wherein the light emitting layer is configured as a hole injection layer and an electron transport layer.3. The light emitter of claim 1 , further comprising an insulating layer claim 1 ,wherein an end portion of the insulating layer contacts the pattern of the light emitting layer.4. The light emitter of claim 1 , wherein the light emitter emits light when current is applied to the light emitting layer.5. The light emitter of claim 1 , further comprising:a first light emitter group configured to emit red light;a second light emitter group configured to emit green light; anda third light emitter group configured to emit blue light.6. The light emitter of claim 3 , further comprising:a first light emitter group configured to emit red light;a second light emitter group configured to emit green light; anda third light emitter group configured to emit blue light.7. The light emitter of claim 4 , further comprising:a first light emitter group ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells. 1. A semiconductor light emitting device comprising:a substrate;a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells;an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer in order to electrically separate the base semiconductor layer and the first conductivity-type semiconductor layer;a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells; anda wiring unit connecting the first and second electrodes of different light emitting cells such that the plurality of light emitting cells are connected.2. The semiconductor light emitting device of claim 1 , wherein the intermediate separation layer is a material layer having an energy band gap equal to or greater than that of the first conductivity-type semiconductor layer.3. The semiconductor light emitting device of claim 2 , wherein the semiconductor ...

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. 1. A light emitting device , comprising:a plurality of light emitting cells disposed spaced apart from each other;an insulation layer covering the light emitting cells; andan electrical connector disposed on the insulation layer,wherein each of the plurality of light emitting cells comprises:a lower semiconductor layer;an upper semiconductor layer disposed on a first region of the lower semiconductor layer;an active layer disposed between the lower semiconductor layer and the upper semiconductor layer, andan electrode layer disposed between the upper semiconductor layer and the insulation layer,wherein the insulation layer comprises first openings on second regions of the lower semiconductor layers.2. The light emitting device of claim 1 , wherein the first openings are spaced apart from each other.3. The light emitting device of claim 2 , wherein the insulation layer comprises a silicon oxide layer.4. The light emitting device of claim 2 , wherein the insulation layer further comprises second openings disposed on the electrode layers.5. The light emitting device of claim 4 , wherein ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate. 1. A semiconductor light emitting device , comprising:a substrate; anda light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer,wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion,wherein the first portion includes a first recess and the second portion includes a second recess,wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate,wherein the first recess and the second recess have a different depth from the bottom surface of the substrate,wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, andwherein the first recess and the second recess have a depth smaller than a thickness of the substrate.2. The semiconductor light emitting device as claimed in claim 1 , wherein the first ...

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor device having a polygonal or circular columnar shape and a method for manufacturing the same. The semiconductor device of the present invention comprises a plurality of semiconductor structures and a connecting support layer that supports the plurality of the semiconductor structures, wherein each of the plurality of the semiconductor structures comprises a P-type first semiconductor layer, an N-type second semiconductor layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, and forms a column having a polygonal or circular shape. 1. A semiconductor device comprising:a plurality of semiconductor structures; anda connection support layer that supports the plurality of the semiconductor structures,wherein each of the plurality of the semiconductor structures comprises:a P-type first semiconductor layer;an N-type second semiconductor layer; anda light-emitting layer located between the first semiconductor layer and the second semiconductor layer, andwherein the plurality of the semiconductor structures forms a column having a polygonal or circular shape.2. The semiconductor device of claim 1 , wherein the plurality of the semiconductor structures are periodically spaced apart from each other and disposed on the connection support layer.3. The semiconductor device of claim 1 , wherein the connection support layer is a metal layer.4. The semiconductor device of claim 1 , wherein the connection support layer comprises at least one of a semiconductor and a metal oxide.5. The semiconductor device of claim 1 , wherein the plurality of the semiconductor structures are arranged so that a street line of the polygonal or circular shape versus an area of the polygonal or circular shape is minimized.6. The semiconductor device of ...

DISPLAY SUBSTRATE

A display substrate includes a gate line extended in one direction of a base substrate, a first data line extended in a direction crossing the gate line, a transverse storage line extended in the extending direction of the gate line and crossing the first data line, a longitudinal storage line extended in the extending direction of the first data line and crossing the transverse storage line, a portion of an overlapping area between the longitudinal storage line and the transverse storage line is exposed in a contact part region having an opening partially exposing the transverse storage line. A contact electrode covers the contact part opening and makes electrical contact with each of the transverse storage line and the longitudinal storage line. 1. A display substrate comprising:a plurality of gate lines extended along a first direction and on a base substrate;a plurality of data lines extended in a second direction and crossing with the gate lines;a plurality of transverse storage lines extended in the first direction and crossing with the data lines;a plurality of longitudinal storage lines extended in the second direction and crossing with the transverse storage lines,wherein at least a first of the transverse storage lines has an exposed portion partially exposing the first transverse storage line such that the first transverse storage line can be contacted at its exposed portion; anda contact electrode covering and making contact with the exposed portion of the first transverse storage line, the contact electrode further making contact with a crossing-by first of the longitudinal storage lines.2. The display substrate of claim 1 , wherein a sidewall surface of the first longitudinal storage line is exposed in a first contact part area where the first of the transverse storage lines has an exposed portion claim 1 , and wherein the contact electrode contacts with a top surface of the first transverse and first longitudinal storage lines and the sidewall surface ...

LIGHT-EMITTING DEVICE

A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high Vis applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. 1. A display device comprising:a transistor comprising a semiconductor layer and a gate electrode,wherein the semiconductor layer comprises a first region and a second region,wherein the first region extends in a first direction,wherein the second region extends in a second direction perpendicular to the first direction,wherein the first region comprises a first impurity region,wherein the second region comprises a second impurity region,wherein the first impurity region and the second impurity region have the same conductivity type, andwherein the gate electrode overlaps with the first region and the second region.2. The display device according to claim 1 , further comprising an insulating film over the transistor and a current supply line over the transistor and the insulating film.3. The display device according to claim 2 , further comprising a source signal line claim 2 ,wherein the source signal line is electrically connected to the transistor and configured to supply voltage to the transistor.4. The display device according to claim 2 , further comprising a light emitting element comprising a pixel electrode over the insulating film claim 2 ,wherein the first impurity region is electrically connected to the ...

LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUFACTURING METHOD THEREOF

Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The semiconductor layer includes a non-flat structure having a plurality of recess regions, and at least one dielectric material layer disposed within each recess region, the dielectric material layer has a generally inverted pyramid shape or a ball shape, and a portion of the non-flat structure is exposed outside the dielectric material layer. Photons emitted from the active layer are scattered by the dielectric material layer as photon scattering structure, and are guided by the inclined internal side faces of the recess regions so that the probability of photons escaping from the light-emitting diode is increased, and thus total internal reflection is reduced, thereby increasing the extraction efficiency and hence the external quantum efficiency. 1. A light-emitting diode comprising: a first portion, wherein the top surface of said first portion is treated into a non-flat structure having a plurality of recess regions;', 'at least one dielectric material layer disposed within each recess region; and', 'a second portion disposed on said non-flat structure and said dielectric material layer,, 'a semiconductor layer comprisingwherein a portion of said non-flat structure is exposed outside said dielectric material layer.2. The light-emitting diode of claim 1 , wherein said semiconductor layer is disposed on a substrate.3. The light-emitting diode of claim 2 , wherein said substrate is selected from a substrate base claim 2 , an epitaxial layer claim 2 , a metal layer claim 2 , or an active layer.4. The light-emitting diode of claim 2 , wherein said semiconductor layer is interposed between said substrate and an active layer.5. The light-emitting diode of claim 1 , wherein said semiconductor layer includes at least one material selected from the group comprising an element semiconductor ...

LED PACKAGES FOR AN LED BULB

A light-emitting diode (LED) bulb includes a base, a shell connected to the base, a thermally conductive liquid held within the shell, and one or more support structures disposed within the shell. One or more LEDs are mounted to the one or more support structures and immersed in the thermally conductive liquid. The one or more LEDs each comprise a semiconductor die having at least one light-emitting interface and the one or more LEDs configured to emit light from the at least one light-emitting interface directly into the thermally conductive liquid. 1. A light-emitting diode (LED) bulb comprising:a base;a shell connected to the base;a thermally conductive liquid held within the shell;one or more support structures disposed within the shell; and 'wherein the one or more LEDs each comprise a semiconductor die having at least one light-emitting interface, the one or more LEDs configured to emit light from the at least one light-emitting interface directly into the thermally conductive liquid.', 'one or more LEDs mounted to the one or more support structures and immersed in the thermally conductive liquid,'}2. The LED bulb of claim 1 , wherein the LED bulb omits a lens disposed between the at least one light-emitting interface and the thermally conductive liquid.3. The LED bulb of claim 1 , wherein the semiconductor die of each of the one or more LEDs is directly mounted to the one or more support structures.4. The LED bulb of claim 1 , wherein the one or more support structures includes a flexible circuit claim 1 , and the semiconductor die of each of the one or more LEDs is directly mounted to the flexible circuit.5. The LED bulb of claim 1 , wherein the one or more support structures includes a flexible circuit claim 1 , a plurality of the one or more LEDs are electrically connected to a flexible circuit claim 1 , and the plurality of LEDs are electrically connected together through the flexible circuit.6. The LED bulb of claim 5 , wherein the flexible circuit ...

ARRAY SUBSTRATE AND PIXEL UNIT OF DISPLAY PANEL

An array substrate and a pixel unit of a display panel include a plurality of subpixels arranged in a pixel array (N row*M column). Only one data line is disposed in a portion of two adjacent columns of subpixels in the pixel array, and two data lines are disposed in another portion of two adjacent columns of subpixels in the pixel array. 1. An array substrate of a display panel , comprising:a plurality of subpixels, wherein the subpixels are arranged in a pixel array of N rows and M columns, and the N and M are positive integers respectively;a plurality of active devices disposed in the subpixels respectively;{'sup': th', 'th', 'th', 'th', 'th', 'th, 'a plurality of first gate lines, wherein a pfirst gate line is disposed between the subpixels in a (3n−2)row and the subpixels in a (3n−1)row, n is a set of positive integers less than or equal to N/3, p is equal to n, and the pfirst gate line is electrically connected to the active devices of the subpixels in the (3n−2)row and the active devices of a portion of the subpixels in the (3n−1)row;'}{'sup': th', 'th', 'th', 'th', 'th', 'th, 'a plurality of second gate lines, wherein a psecond gate line is disposed between the subpixels in the (3n−1)row and the subpixels in a 3nrow, and the psecond gate line is electrically connected to the active devices of a portion of the subpixels in the (3n−1)row and the active devices of the subpixels in the 3nrow; and'} [{'sup': th', 'th', 'th', 'th', 'th', 'th', 'th, 'a plurality of first data lines, wherein a qfirst data line is disposed on one side of the subpixels in a (2m−1)column, m is a set of positive integers less than or equal to M/2, q is equal to m, and when m=1, the qfirst data line is electrically connected to the active devices of a portion of the subpixels in the (2m−1)column, and when 1≦m≦M/2, the qfirst data line is electrically connected to the active devices of a portion of the subpixels in a (2m−2)column and a portion of the subpixels in the (2m−1)column;'}, {' ...

METHOD OF MANUFACTURING SUBSTRATE FOR LED MODULE AND SUBSTRATE FOR LED MODULE MANUFACTURED BY THE SAME

Disclosed herein are a method of manufacturing a substrate for an LED module and a substrate for an LED module manufactured by the same, including: providing a base substrate having metal layers formed on both surfaces thereof; forming circuit patterns on the metal layers; applying a solder resist layer onto the circuit patterns; forming a through hole penetrating through the base substrate; separating the base substrate up and down; and bonding each of the separated base substrates to a parent substrate, thereby preventing light reflectivity of a parent substrate from being degraded due to a resist applying process and a surface treatment process. 1. A method of manufacturing a substrate for an LED module , comprising:providing a base substrate having metal layers formed on both surfaces thereof;forming circuit patterns on the metal layers;applying a solder resist layer onto the circuit patterns;separating the base substrate up and down; andbonding each of the separated base substrates to a parent substrate.2. The method according to claim 1 , further comprising claim 1 , after the applying of the solder resist layer onto the circuit patterns claim 1 , performing a surface treatment process on the exposed circuit patterns.3. The method according to claim 1 , further comprising forming a through hole penetrating through the base substrate at the time of forming the circuit patterns on the metal layer.4. The method according to claim 3 , further comprising claim 3 , after the bonding of each of the separated base substrates to the parent substrate claim 3 , plating an opened region by the through hole in the parent substrate.5. The method according to claim 1 , wherein the bonding of each of the separated base substrates to the parent substrate is performed by temporarily bonding a bonding sheet between the base substrate and the parent substrate.6. A method of manufacturing a substrate for an LED module claim 1 , comprising:providing two sheets of base substrate ...

Light Emitting Device Substrate with Inclined Sidewalls

A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces. 1. A method comprising:epitaxially growing a light emitting structure on a surface of a substrate;scribing the substrate to form a set of angled side surfaces on the substrate, wherein a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate; andcleaning the substrate and the light emitting structure after the scribing.2. The method of claim 1 , wherein the angle is approximately thirty degrees.3. The method of claim 1 , wherein the cleaning includes placing the substrate in a potassium hydroxide solution.4. The method of claim 1 , further comprising forming a light emitting diode from the light emitting structure and substrate.5. The method of claim 1 , further comprising forming a second set of angled side surfaces on the light emitting structure claim 1 , wherein a vector of each angled side surface in the second set of angled side surfaces on the light emitting structure forms a second angle between approximately ten and approximately eighty degrees with the normal vector of the surface of the substrate.6. The method of claim 5 , wherein the angle and the second angle are different.7. The method of claim 1 , further ...

LIGHT EMITTING LAMP

Disclosed is a light emitting lamp including a light source module including at least one light source and a light guide layer disposed on a substrate burying the at least one light source, and a housing accommodating the light source module, and the at least one light source includes a body having a cavity, a first lead frame including one end exposed to the cavity and the other end passing through the body and exposed to one surface of the body, a second lead frame including one end exposed to one portion of the surface of the body, the other end exposed to the another portion of the surface of the body, and an intermediate part exposed to the cavity, and at least one light emitting chip including a first semiconductor layer, an active layer and a second semiconductor layer, and disposed on the first lead frame. 1. A light emitting device package comprising:a package body having a cavity;a first lead frame including one end exposed to the cavity and the other end passing through the package body and exposed to one surface of the package body;a second lead frame including one end exposed to one side of the surface of the package body, the other end exposed to the other side of the surface of the package body, and an intermediate part exposed to the cavity; andat least one light emitting chip including a first semiconductor layer, an active layer and a second semiconductor layer, and arranged on the first lead frame.2. The light emitting device package according to claim 1 , wherein the intermediate part of the second lead frame electrically connect the end and the other end of the second lead frame to each other.3. The light emitting device package according to claim 1 , wherein the first lead frame includes:a first upper surface part exposed to the cavity; anda first side surface part bent from a first side portion of the first upper surface part and exposed to the surface of the package body.4. The light emitting device package according to claim 3 , wherein at ...

DISPLAY DEVICE

In a display device connected with an IC driver, particularly the reliability of connection between an IC terminal located on the outermost side and the IC driver is improved. IC terminals and flexible wiring board terminals are formed on a terminal region of a TFT substrate. A plurality of the IC terminals are formed at a predetermined pitch. The reliability of an outermost IC terminal is degraded as compared with the reliability of the other IC terminals caused by the loading effect in etching a protection insulating film. In order to prevent this degradation, a dummy terminal is formed on the outer side of the outermost IC terminal, and the loading effect on the outermost IC terminal is made equal to the loading effect on the other IC terminals. Accordingly, degradation in the reliability of the outermost IC terminal is prevented. 1. A display device comprising:a TFT substrate including a terminal region and a display region on which a pixel including a TFT is formed in a matrix arrangement, with an IC driver connected to the terminal region of the TFT substrate,wherein an IC terminal to be connected to the IC driver is formed on the terminal region;the IC driver includes a bump to be connected to the IC terminal; anda plurality of the IC terminals are formed at a predetermined pitch, a dummy terminal is formed on an outer side of an IC terminal located on an outermost side of the plurality of the IC terminals, the dummy terminal is not connected to an interconnection on the display region, and no dummy terminal is formed on an inner side of the IC terminal located on the outermost side.2. The display device according to claim 1 , wherein the bump of the IC driver is not connected to the dummy terminal.3. The display device according to claim 2 , wherein the dummy terminal includes a through hole formed at least on an insulating film.4. The display device according to claim 3 , wherein the dummy terminal includes ITO covering the through hole.5. The display ...

Method for Producing a Semiconductor Layer Sequence, Radiation-Emitting Semiconductor Chip and Optoelectronic Component

A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed. 115-. (canceled)16. A method for producing a semiconductor layer sequence based on nitride compound semiconductor material and having a microstructured outer surface , the method comprising:growing a first semiconductor layer of the semiconductor layer sequence on a substrate;applying an etch stop layer on the first semiconductor layer;growing a further semiconductor layer on the layer sequence obtained after applying the etching step later;separating the semiconductor layer sequence from the substrate by at least partially removing a separating zone of the semiconductor layer sequence; andetching an obtained separating surface of the semiconductor layer sequence by use of an etchant, such that a microstructuring of the first semiconductor layer is effected and the microstructured outer surface is formed.17. The method according to claim 16 , wherein at least one layer of the semiconductor layer sequence comprises a material of the formula InAlGaN where 0≦x≦1 claim 16 , 0≦y≦1 and x+y≦1.18. The method according to claim 16 , wherein the first layer of the semiconductor layer sequence comprises InGaN where 0≦x≦1.19. The ...

DISPLAY DEVICE, ARRAY SUBSTRATE, AND THIN FILM TRANSISTOR THEREOF

A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided. 1. A thin film transistor , comprising:a gate disposed on a substrate, wherein the gate having a first lateral surface connecting the substrate;a gate insulating layer disposed on the gate;a semiconductor layer disposed on the gate insulating layer and covering the first lateral surface of the gate; anda source and a drain respectively disposed on the semiconductor layer, located at two opposite sides of the semiconductor layer, and disposed on the first lateral surface of the gate.2. The thin film transistor of claim 1 , wherein the source and the drain cover the first lateral surface of the gate claim 1 , and are on the same height relative to the substrate.3. The thin film transistor of claim 1 , wherein the source and the drain are disposed on two opposite ends of the first lateral surface claim 1 , and on different height relative to the substrate.4. The thin film transistor of claim 1 , wherein a thickness of the gate is about 0.1-5 μm.5. The thin film transistor of claim 1 , wherein an angle between the first lateral surface and a bottom surface of the gate is about 45°-90° claim 1 , and the bottom surface of the gate is adjacent to the substrate.6. The thin film transistor of claim 1 , wherein charge carrier mobility of the semiconductor layer is at least 5 cm/Vs.7. The thin film transistor of claim 1 , wherein a material of the semiconductor layer is metal oxide semiconductor material or polycrystalline silicon.8. The thin film transistor of claim 1 , wherein a thickness of the semiconductor layer is about 20-200 nm.9. The thin film transistor of claim 1 , wherein a thickness of the gate insulating ...

Display Device

Disclosed are a TFT array substrate for decreasing a bezel width and a display device including the same. The display device includes a first substrate including a display area (including a pixel formed in a pixel area defined by a gate line and a data line which intersect) and a non-display area that includes a built-in shift register connected to the gate line and a gate link part connected to the built-in shift register, a second substrate facing the first substrate, and a seal pattern formed in the non-display area of the first substrate in correspondence with an edge portion of the second substrate to facing-couple the first and second substrates. The seal pattern includes a first hardening area hardened by a first hardening process, and a second hardening area hardened by a second hardening process. 1. A display device , comprising:a first substrate comprising a display area, which comprises a pixel formed in a pixel area defined by a gate line and a data line which intersect, and a non-display area that comprises a built-in shift register connected to the gate line and a gate link part connected to the built-in shift register;a second substrate facing the first substrate; anda seal pattern formed in the non-display area of the first substrate in correspondence with an edge portion of the second substrate to facing-couple the first and second substrates,wherein the seal pattern comprises:a first hardening area hardened by a first hardening process to overlap a portion of the built-in shift register; anda second hardening area hardened by a second hardening process different from the first hardening process to overlap a portion of the built-in shift register.2. The display device of claim 1 , wherein the built-in shift register comprises a switching element formed in the first substrate to overlap the first hardening area claim 1 , the switching element comprising a plurality of openings which overlap the seal pattern.3. The display device of claim 2 , wherein ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate. 1. A light-emitting device , comprising:a case comprising a first substrate and a sidewall on the first substrate;a light-emitting element that is mounted on the first substrate in a region surrounded by the sidewall and comprises a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate; anda low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate,wherein a side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate.2. The light-emitting device according to claim 1 , wherein a non-tapered portion on the side surface along the longitudinal direction of the second substrate has a higher smoothness than a side surface along the lateral direction of the second substrate.3. The light-emitting device according to claim 2 , wherein the second substrate comprises a GaN substrate having a c-plane as a principal surface claim 2 ,wherein the non-tapered portion on the side surface along the longitudinal direction of the second substrate comprises an m-plane, andwherein the side surface along the lateral direction of the ...

DISPLAY DEVICE

A display device in which various embodiments can prevent a vertically-striped blur is disclosed. In one aspect, the display device includes first gate lines, second gate lines, data lines, dummy data lines, and a plurality of pixels. The first and second gate lines are extended in a first direction. The data lines and the dummy data lines are extended in a second direction intersecting the first direction. The pixels are defined by the intersection of a first gate line of the first gate lines and a first data line of the data lines. 1. A display device comprising:a first gate line and a second gate line configured to extend in a first direction;a first data line, a second data line, configured to extend in a second direction, the first direction intersecting the second direction; anda pixel disposed at the intersections of the first gate line and the second gate line, and the first data line and the second data line, a first switching device connected to the first gate line, and the first data line;', 'a second switching device connected to the second gate line, and the second data line;', 'a dummy electrode bar configured to extend in the second direction, disposed between the first data line and the second data line;', 'a connection bar connecting the second data line and the dummy electrode bar, the connection bar is extended in the first direction;', 'a first pixel electrode connected to the first switching device, and interposed between the first data line and the dummy electrode bar; and', 'a second pixel electrode connected to the second switching device, separated from the first pixel electrode, interposed between the second data line and the dummy electrode bar., 'wherein the pixel includes2. The display device of claim 1 , wherein the connection bar is configured to overlap with one of the first gate line and the second gate line.3. The display device of claim 1 , wherein the dummy electrode bar is configured to have a length longer than a length of the ...

Semiconductor light emitting device and manufacturing method of the same

According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR

An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface. 1a substantially planar substrate including a first surface that is substantially planar; a substantially planar N-doped region located substantially parallel to the substantially planar substrate and facing away from the substantially planar substrate; and', 'a P-doped region defining a mesa-shaped section facing away from the substantially planar substrate, the P-doped region disposed parallel the N-doped region, further away from the substantially planar substrate than the N-doped region; and, 'at least one bare light emitting diode (“LED”) die coupled to the first surface, the at least one bare LED die comprisingan insulator disposed between the N-doped region and the substantially planar substrate, along a portion of the at least one bare LED die, from a side of the mesa, along the N-doped region, and onto a side of the N-doped region.. An apparatus, comprising: This patent application is a continuation of and claims priority under 35 U.S.C. §120 to U.S. patent application Ser. No. 13/492,718, entitled “LED Light Disposed on a Flexible Substrate and Connected with a Printed 3D conductor” filed on Jun. 8, 2012 (Attorney Docket No. 3523.001US2), which claims the benefit of priority under 35 U.S.C. §120 to U.S. patent application Ser. No. 13/346,518, entitled “LED Light Disposed on a Flexible Substrate and Connected with a Printed 3D conductor,” filed on Jan. 9, 2012 (Attorney Docket No. 3523.001US1), which claims the benefit of priority, under 35 U.S.C. Section 119(e), to U.S. Provisional Patent Application Ser. No. 61/542,736, entitled “LED Light ...

Optoelectronic Semiconductor Component

An optoelectronic semiconductor component includes a carrier which has an upper side and a lower side opposite to the upper side. At least one radiation-emitting semiconductor device is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device. A radiation-absorbing layer is arranged to absorb ambient light, which impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places. 115-. (canceled)16. An optoelectronic semiconductor component , comprising:a carrier having an upper side and a lower side opposite to the upper side;a radiation-emitting semiconductor device disposed on the upper side and having a radiation emission surface through which at least a portion of electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device; anda radiation-absorbing layer arranged to absorb ambient light that impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places;wherein the radiation-absorbing layer completely encircles the radiation-emitting semiconductor device in a lateral direction and is in direct contact, at least in places, with lateral surfaces of the radiation-emitting semiconductor device; andwherein the radiation emission surface is free from the radiation-absorbing layer.17. The optoelectronic semiconductor component as claimed in claim 16 , wherein the outer surface of the semiconductor component is formed at least in places by an outer surface of the radiation-absorbing layer.18. The optoelectronic semiconductor component as claimed in claim 16 , wherein the radiation-absorbing layer comprises a filler which claim 16 , at least in places claim 16 , encases the lateral surfaces of the ...

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a third semiconductor layer between the active layer and the second conductive semiconductor layer, and a light extraction structure on the second conductive semiconductor layer. A top surface of the third semiconductor layer has a Ga-face. 1. A light emitting device comprising:a first conductive semiconductor layer;an active layer on the first conductive semiconductor layer;a second conductive semiconductor layer on the active layer;a third semiconductor layer between the active layer and the second conductive semiconductor layer; anda light extraction structure on the second conductive semiconductor layer,wherein a top surface of the third semiconductor layer has a Ga-face.2. The light emitting device of claim 1 , wherein the third semiconductor layer includes dopants.3. The light emitting device of claim 1 , wherein dopants of the third semiconductor layer have a polarity identical to a polarity of dopants of the second conductive semiconductor layer.4. The light emitting device of claim 1 , wherein the third semiconductor layer has no dopants.5. The light emitting device of claim 1 , wherein the third semiconductor layer contacts the active layer.6. The light emitting device of claim 1 , further comprising a fourth conductive semiconductor layer between the active layer and the third semiconductor layer.7. The light emitting device of claim 6 , wherein dopants of the fourth conductive semiconductor layer have a polarity different from a polarity of dopants of the first conductive semiconductor layer and identical to a polarity of dopants of the second conductive semiconductor layer.8. The light emitting device of claim 6 , wherein concentration of dopants of the third semiconductor layer is less ...

LIGHT EMITTING ELEMENTS, LIGH EMITTING DEVICES INCLUDING LIGHT EMITTING ELEMENTS AND METHODS OF MANUFACTURING SUCH LIGHT EMITTING ELEMENTS AND/OR DEVICES

An emitting device including a first electrode, a second electrode spaced apart from the first electrode, an emitting pattern including a portion between the first electrode and the second electrode, and a block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode. 149-. (canceled)50. A light-emitting apparatus comprising:a circuit board;a emitting device on the circuit board includinga first electrode,a second electrode spaced apart from the first electrode,an emitting pattern including a portion between the first electrode and the second electrode,a first block pattern including a portion between the emitting pattern and the first electrode and/or on a same level as the first electrode, anda second block pattern including a portion between the emitting pattern and the second electrode and/or on a same level as the second electrode, wherein the first block pattern and the second block pattern face each other across the emitting pattern;a phosphor layer on the emitting device; anda first transparent resin on the phosphor layer.51. The light-emitting apparatus of claim 50 , wherein the phosphor layer includes a second transparent resin covering the emitting device claim 50 , and a phosphor on the second resin.52. The light-emitting apparatus of claim 51 , wherein the phosphor is between the first transparent resin and the second transparent resin.53. The light-emitting apparatus of claim 51 , wherein the phosphor includes nitride-based and/or oxide-based material activated by lanthanide.54. The light-emitting apparatus of claim 50 ,wherein the circuit board includes a first conductive region and a second conductive region electrically separated from the first conductive region,wherein the first conductive region and the second conductive region are electrically connected with the first electrode and the second electrode respectively.55. The light-emitting apparatus of claim 54 , further ...

SAPPHIRE SUBSTRATE AND SEMICONDUCTOR

A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate. 1. A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device , the sapphire substrate comprising a plurality of projections on the principal surface ,wherein each of the projections has a bottom that has a substantially polygonal shape,wherein each side of the bottom of the projections has a depression in its center, andwherein vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.2. The sapphire substrate according to claim 1 ,wherein the plurality of projections are arranged so that any straight line that is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections passes through the inside of at least one of projections.3. The sapphire substrate according to claim 1 ,wherein each of the projections has a substantially polygonal pyramid shape or substantially truncated polygonal pyramidal shape.4. The sapphire substrate according to claim 1 ,wherein the plurality of projections are arranged so that one of vertexes of the bottom of one projection of neighboring projections is located in a region defined by connecting points of two vertexes of the bottom and the deepest point of the depression ...

MULTI-DIMENSIONAL SOLID STATE LIGHTING DEVICE ARRAY SYSTEM AND ASSOCIATED METHODS AND STRUCTURES

A multi-dimensional solid state lighting (SSL) device array system and method are disclosed. An SSL device includes a support, a pillar having several sloped facets mounted to the support, and a flexible substrate pressed against the pillar. The substrate can carry a plurality of solid state emitters (SSEs) facing in various directions corresponding to the sloped facets of the pillar. The flexible substrate can be a flat substrate prepared using planar mounting techniques, such as wirebonding techniques, before bending the substrate against the pillar. 1. A solid state light (SSL) device , comprising: individual sections include', 'a first side and a second side,', 'a first contact on a first side of the interface member,', 'a second contact on the first side of the interface member, and', 'a through-connect extending from the first side to the second side, the first through-connect being electrically coupled to the first contact; and, 'a flexible interface member having a central section and at least one outer section, wherein'}a plurality of solid state emitters (SSE), wherein at least one SSE is attached to each of the central section and outer section, and the individual SSEs are carried by the section and electrically connected to the first contact and to the second contact.2. The SSL device of claim 1 , further comprising a pillar having a central facet and at least one outer facet sloping away from the central facet claim 1 , wherein the central facet of the pillar contacts the second side of the interface member at the central section claim 1 , and wherein the outer facet contacts the second side of the interface member at the outer sections.3. The SSL device of wherein the central section is generally square and the pillar has four outer sections sloping at an acute angle relative to the central section.4. The SSL device of claim 1 , further comprising a reflective extension extending from individual outer sections claim 1 , wherein the reflective ...

LIGHT EMITTING DEVICE CHIP SCALE PACKAGE

The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation. 1. A method of creating a light emitting device comprising:forming a light emitting structure on a substrate, the light emitting structure having a top surface opposite the substrate and including at least first and second electrodes that are accessible at the top surface,forming a first insulating layer above the electrodes, with at least first and second openings in the first insulating layer for contacting the at least first and second electrodes, respectively,forming non-removable insulating walls above the first insulating layer, the insulating walls configured to provide insulation between the at least first and second openings, andfilling at least a portion of spaces between the insulating walls with electrically conductive material, the electrically conductive material extending into the at least first and second openings to contact the at least first and second electrodes,wherein the insulating walls and electrical conductive material are configured to provide permanent structural support to the light emitting element, obviating a need for the substrate.2. The method of claim 1 , including removing some or all of the substrate.3. The method of claim 1 , including:forming a second insulating layer above the electrically conductive material, wherein the second ...

LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A light-emitting diode (LED) structure includes an insulation substrate; LED chips each includes an epitaxial layer having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the insulation substrate, and comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench within the mesa structure; interconnection layers connect the LED chips; electrode pads respectively connected to exposed portions of the semiconductor layers; a reflective insulating layer covering the interconnection layers, the mesa structures and the electrode pads, and having penetration holes respectively exposing a portion of the electrode pads; and bonding pads located on a portion of the reflective insulating layer and connected to the electrode pads through the penetrating holes. A method of manufacturing the LED structure. 1. A light-emitting diode (LED) structure , comprising:an insulation substrate;a plurality of LED chips, wherein each of the LED chips comprises an epitaxial layer, the epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate, wherein each of the LED chips comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, wherein a first isolation trench is defined by two adjacent LED chips in a first direction, and wherein the first isolation trench is disposed in the mesa structure;a plurality of interconnection layers, connecting two adjacent LED chips of the LED chips, respectively;a first conductive type electrode pad and a second conductive type electrode pad, disposed on a first LED chip and a second LED chip of the LED chips, respectively, and electrically connected to the exposed portion of the first ...

DISPLAY DEVICE

In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller. 1. A display device which is configured to include an array substrate and an opposed substrate which is faced the array substrate ,wherein a TFT and a projection are disposed in each pixel portion of the array substrate;a source electrode of the TFT extends so as to cover at least a part of the projection;an inorganic passivation film is formed over the TFT and the projection;an organic passivation film is formed on the inorganic passivation film on the TFT;an opposed electrode is formed on the organic passivation film;an upper insulation film is formed over the opposed electrode;a pixel electrode is formed on the upper insulation film; andthe pixel electrode is electrically connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection.2. The display device according to claim 1 ,wherein the TFT and the projection are formed on a barrier film formed on a glass substrate;the TFT is configured in such a manner that a semiconductor layer is formed on the barrier film, a gate insulation film is formed over the semiconductor layer, a gate electrode is formed on the gate insulation film at a ...

THIN FILM TRANSISTOR ARRAY PANEL, LIQUID CRYSTAL DISPLAY, METHOD FOR REPAIRING THE SAME, COLOR FILTER ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel. 1. A thin film transistor array panel , comprising:a substrate comprising pixel areas;gate lines extending along a first direction;data lines extending along a second direction;thin film transistors disposed in the pixel areas and connected to the gate lines and the data lines;pixel electrodes disposed in the pixel areas and connected to the thin film transistors; first storage electrodes extending along the gate lines;', 'second storage electrodes extending from the first storage electrodes and are paired along both sides of each data line;', 'connection parts extending across the data lines and directly connecting the pair of second storage electrodes; and', 'connection bridges extending across the gate lines and connecting the second storage electrodes of adjacent rows, and, 'wherein the storage electrodes comprisewherein the first storage electrodes are connected to the connection parts through the second storage electrodes.2. The thin film transistor array panel of claim 1 , wherein the first storage electrodes are not directly connected to the connection parts.3. The thin film transistor array panel of claim 1 , wherein the connection parts are not parallel with the gate lines.4. The thin film ...

DISPLAY DEVICE AND METHOD FOR FABRICATING SAME

In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film. 116-. (canceled)17. A method for fabricating a display device by bonding an active matrix substrate to a counter substrate via a frame-like sealing member , the method comprising:forming a first conductive film having a predetermined pattern on a substrate by using a first mask;forming a first insulating film covering the first conductive film on the substrate;forming a semiconductor layer having a predetermined pattern on the first insulating film by using a second mask;forming a second conductive film having a predetermined pattern on the first insulating film by using a third mask;forming an interlayer insulating film made of a photosensitive organic insulating film having a predetermined pattern by using a fourth mask to cover part of the first insulating film on which the semiconductor layer and the second conductive film have been formed;etching part of the first insulating film by using the interlayer insulating film as a mask; in the forming the first conductive film, part of the first conductive film is formed in a region in which the sealing member is to be formed,', 'in the forming the semiconductor layer, part of the semiconductor layer is formed in the region in which the sealing member is to be formed,', 'in the forming the interlayer insulating film, the interlayer insulating film on the semiconductor layer is removed in ...

THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate. 1. A thin film transistor array panel comprising:a substrate;a gate line positioned on the substrate;a gate insulating layer positioned on the gate line;a semiconductor layer positioned on the gate insulating layer and having a channel portion;a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer;a passivation layer positioned on the data line and the drain electrode, and having a contact hole formed therein; anda pixel electrode positioned on the passivation layer;wherein the pixel electrode is connected to the drain electrode through the contact hole; andthe channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate.2. The thin film transistor array panel of claim 1 , whereinthe gate line includes a gate electrode protruding from the gate line.3. The thin film transistor array panel of claim 2 , wherein:the source electrode overlaps the gate line in a plan view of the substrate.4. The thin film transistor array panel of claim 3 , wherein:the drain electrode overlaps the gate line in a plan view of the ...

METHOD FOR MANUFACTURING LED CHIP WITH INCLINED SIDE SURFACE

A method for manufacturing an LED chip is disclosed wherein a substrate is provided. A first semi-conductor layer is formed on the substrate. A photoresist layer with an inverted truncated cone shape and a blocking layer with an inclined inner surface facing and surrounding the photoresist layer are formed on the first semi-conductor layer. The photoresist layer is removed and an epitaxial region surrounded by the blocking layer is defined. A lighting structure is formed inside the epitaxial region. The blocking layer is then removed and the first semi-conductor layer is exposed. Electrodes are formed and respectively electrically connected to the first semi-conductor layer and the lighting structure. 1. A method for manufacturing an LED (light emitting diode) chip , comprising:providing a substrate;forming a first semi-conductor layer on the substrate;forming a photoresist layer with an inverted truncated cone shape and a blocking layer with an inclined inner surface facing and surrounding the photoresist layer on the first semi-conductor layer;removing the photoresist layer and defining an epitaxial region surrounded by the inner surface of the blocking layer;forming a lighting structure inside the epitaxial region;removing the blocking layer and exposing the first semi-conductor layer; andforming electrodes respectively electrically connecting the first semi-conductor layer and the lighting structure.2. The method of claim 1 , wherein the photoresist layer is formed by a photolithography process.3. The method of claim 1 , a center of the photoresist layer is coincident with or adjacent to a center of the first semi-conductor layer.4. The method of claim 1 , wherein a height of the blocking layer is less than a height of the photoresist layer.5. The method of claim 1 , wherein a periphery surface of the photoresist layer is inclined relative to the first semi-conductor layer by an acute angle claim 1 , and the inner surface of the blocking layer is inclined ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. 1. A method for manufacturing a semiconductor light emitting device , comprising:forming a first base layer including a nitride semiconductor including In on an n-type semiconductor layer;forming a first cap layer on a portion of the first base layer;reducing an In content in a portion of the first base layer not covered by the first cap layer to transform the portion of the first base layer not covered by the first cap layer into a first non-well layer to form a first light emitting layer including the first non-well region and a first well region derived from a portion of the first base layer covered by the first cap layer;forming a first barrier layer on the first light emitting layer and on the first cap layer; andforming a p-type semiconductor layer on the first barrier layer.2. The method according to claim 1 , further comprising after the forming the first barrier layer and prior to the forming p-type semiconductor layer:forming on the first barrier layer a second base layer including a nitride semiconductor including In with an In composition ratio same as an In composition of the first base layer;forming a second cap layer on a portion of the second base layer;forming a second cap layer on a portion of the second base layer;reducing an In ...

WHITE NANOLED WITHOUT REQUIRING COLOR CONVERSION

A nano-LED containing an array of nano-pillars of different diameters that are distributed over an emission area of an LED chip is capable of emitting broadband and white or nearly white light. Since each pillar emits light at a different wavelength according to its diameter and strain state, the overall emission spectral characteristics of the device is a combination of individual spectrum, giving rise to broadband emission. The spectral shape can be tailored for different shades of white emission, by controlling the distribution of the different diameter nano-pillars. The nano-pillars are patterned by nanosphere lithography. 1. A semiconductor light-emitting diode , comprising:a light-emitting region, wherein the light-emitting region comprises an array of non-uniformly-sized nano-pillars formed using a top-down approach.2. The semiconductor light-emitting diode according to claim 1 , wherein the non-uniformly-sized nano-pillars are patterned by nanosphere lithography using a colloidal solution containing nanospheres of different diameters.3. The semiconductor light-emitting diode according to claim 2 , wherein the nanospheres comprise at least one etch resistant material selected from the group consisting of silica and alumina.4. The semiconductor light-emitting diode according to claim 2 , wherein the nanosphere colloidal solution is dispersed onto the surface of an LED wafer or chip into a monolayer.5. The semiconductor light-emitting diode according to claim 4 , wherein the monolayer of nanospheres is dispersed using at least one technique selected from the group consisting of: spin-coating claim 4 , vertical deposition claim 4 , and jet-printing.6. The semiconductor light-emitting diode according to claim 1 , wherein the non-uniformly-sized nano-pillars are patterned by electron beam lithography claim 1 , ion beam lithography claim 1 , optical lithography claim 1 , or nanoimprint lithography.7. The semiconductor light-emitting diode according to claim 1 , ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlGaInP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlGaAs (0≦z≦1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlGa)InP (0.7≦v≦1) or AlInP (0≦w≦1) and having depressions and protrusions. 1. A semiconductor light emitting device comprising:{'sub': x', 'y', '1-x-y', 'z', '1-z, 'first and second conductivity-type semiconductor layers formed of AlGaInP(0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlGaAs (0≦z≦1); and'}an active layer interposed between the first and second conductivity-type semiconductor layers,{'sub': v', '1-v', '0.5', '0.5', 'w', '1-w, 'wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlGa)InP (0.7≦v≦1) or AlInP (0≦w≦1) and having depressions and protrusions.'}2. The semiconductor light emitting device of claim 1 , wherein the low refractive index surface layer has a composition of AlInP(0.3≦w≦1).3. The semiconductor light emitting device of claim 1 , further comprising an intermediate layer interposed between the low refractive index surface layer and the active layer claim 1 , the intermediate layer having a refractive index greater than that of the low refractive index surface layer.4. The semiconductor light emitting device of claim 3 , wherein the intermediate layer has a composition of AlInP (0≦u≦v claim 3 , w).5. The semiconductor light emitting device of claim 3 , wherein the intermediate layer has a composition of AlGaInP (0≦m≦1 claim 3 , 0≦n≦1).6. The semiconductor light emitting device of claim 1 , further comprising a plurality of intermediate layers interposed between the low refractive index surface layer and the active layer claim 1 , wherein the plurality of intermediate layers ...

Series Connected Segmented LED

A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment. 116-. (canceled)17. A light emitting device comprising:a substrate;a light emitting structure formed on the substrate and comprising:a first semiconductor layer of a first conductivity type formed on the substrate;an active layer on the first semiconductor layer; anda second semiconductor layer of an opposite conductivity type from the first conductivity type formed on the active layer;a trench that divides the light emitting structure into first and second segments that are electrically isolated from one another;a mirror in electrical contact with the first semiconductor layer in each of the first and second segments;a barrier layer formed adjacent to the mirror and between the mirror and the substrate in each of the first and second segment, an upper surface of the barrier layer and a lower surface of the first semiconductor layer being positioned in a substantially same plane, the upper surface of the barrier layer partially exposed by the trench; anda connection electrode contacting the upper surface of the barrier layer in the first segment exposed by the trench and ...

METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT

A method for producing an optoelectronic component includes: providing a substrate, applying a solution to a main side of the substrate, applying a standing ultrasonic field to the substrate and to the solution, curing and drying the solution to form a layer having a wavy top side facing away from the substrate, and applying a layer stack on the top side of the wavy layer, said layer stack being designed to generate light during the operation of the finished component. 1. A method for producing an optoelectronic component comprising:providing a substrate,applying a solution to a main side of the substrate,applying a standing ultrasonic field to the substrate and to the solution,curing and drying the solution to form a layer having a wavy top side facing away from the substrate, andapplying a layer stack on the top side of the wavy layer, said layer stack being designed to generate light during the operation of the finished component.2. The method as claimed in claim 1 , wherein the layer stack replicates a shape of the wavy layer claim 1 , wherein a side of the layer stack which faces away from the substrate claim 1 , with a tolerance of at most 20% of an average wave height of waves of the layer claim 1 , is shaped like the top side of the layer.3. The method as claimed in claim 1 ,wherein polymer chains are dissolved in the solution and wherein particles are dispersed in the solution.4. The method as claimed in claim 1 ,wherein the wavy layer is a continuous layer, wherein an average periodicity of waves of the layer corresponds to an average half-wavelength of ultrasonic waves of the standing ultrasonic field in the solution.5. The method as claimed in claim 1 ,wherein the wavy layer and the substrate are partly transmissive to the light generated in the layer stack.6. The method as claimed in claim 1 ,wherein the wavy layer is embodied in an electrically conductive fashion.7. The method as claimed in claim 1 ,wherein the standing ultrasonic field is generated by ...

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency. 1. A light-emitting device comprising:a lower portion;a plurality of vertical light-emitting structures disposed on the lower portion;a conductive member partially surrounding the plurality of vertical light-emitting structures; anda plurality of reflective members disposed between the plurality of vertical light-emitting structures and reflect light that is emitted in a lateral direction from the plurality of vertical light-emitting structures.2. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has a core-shell structure.3. The light-emitting device of claim 2 , wherein: a first conductive type semiconductor,', 'an active layer, and', 'a second conductive type semiconductor,, 'each of the plurality of vertical light-emitting structures comprisesthe first conductive type semiconductor is a core portion, andthe active layer and the second conductive type semiconductor are a shell portion.4. The light-emitting device of claim 1 , wherein each of the plurality of vertical light-emitting structures has any one shape selected from: nanorod claim 1 , nanowire claim 1 , or nanopyramid shape.5. The light-emitting device of claim 1 , wherein the conductive member comprises: any one of indium tin oxide (ITO) claim 1 , ZnO claim 1 , ...

Light-emitting device having patterned interface and the manufacturing method thereof

The present disclosure provides a light-emitting device having a patterned interface composed of a plurality of predetermined patterned structures mutually distinct, wherein the plurality of predetermined patterned structures are repeatedly arranged in the patterned interface such that any two neighboring patterned structures are different from each other. The present disclosure also provides a manufacturing method of the light-emitting device. The method comprises the steps of providing a substrate, generating a random pattern arrangement by a computing simulation, forming a mask having the random pattern arrangement on the substrate, and removing a portion of the substrate thereby transferring the random pattern arrangement to the substrate.

DUAL MODE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode. 1. A dual mode display apparatus comprising:a lower substrate;a first lower electrode on the lower substrate;a light switching layer on the first lower electrode;a first upper electrode on the light switching layer;a passivation layer on the first upper electrode;a contact plug connected to the first upper electrode, the contact plug penetrating the passivation layer;a second lower electrode on the contact plug and the passivation layer;an organic light-emitting layer on the second lower electrode;a second upper electrode on the organic light-emitting layer; andan upper substrate on the second upper electrode.2. The dual mode display apparatus of claim 1 , further comprising:an etch stop layer disposed between the first upper electrode and the light switching layer.3. The dual mode display apparatus of claim 2 , further comprising:an adhesive layer disposed between the etch stop layer and the light switching layer.4. The dual mode display apparatus of claim 3 , wherein the adhesive layer includes a polymer film.5. The dual mode display apparatus of claim 1 , wherein the light switching layer includes a photonic crystal layer.6. The dual mode display apparatus of claim 5 , wherein the light switching layer further includes a liquid crystal layer.7. The dual mode display apparatus of claim 1 , further comprising:a thin film transistor ...

MONOLITHIC SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MAKING THE SAME

A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described. 1. A monolithic semiconductor light emitting device comprising:an n-type cladding layer;an electrode on the n-type cladding layer;a p-type cladding layer;an electrode on the p-type cladding layer; and{'i': 'd', 'an active region of a multiple quantum well structure comprising a plurality of barrier layers and a plurality of active layers alternately laminate, wherein the active region is interposed between the n-type cladding layer and the p-type cladding layer;'}wherein the device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm.2. The monolithic semiconductor light emitting device of claim 1 , wherein:each of the active layers comprises at least one of indium aluminum gallium nitride, indium aluminum nitride, indium gallium nitride, indium nitride, aluminum gallium nitride, gallium nitride, and aluminum nitride; and/orwherein each of the barrier layers comprises at least one of indium aluminum gallium nitride, indium aluminum nitride, indium gallium nitride, indium nitride, aluminum gallium nitride, gallium nitride, and aluminum nitride.3. The monolithic semiconductor light emitting device of claim 1 , wherein a first active layer emits light having a first spectral distribution and having a first ...

Substrate Structure, Method of Forming the Substrate Structure and Chip Comprising the Substrate Structure

A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection. 1. A substrate structure , comprising:a substrate; andat least a groove structure formed on a surface of the substrate, the groove structure having a lateral epitaxial pattern in a cross section perpendicular to the surface of the substrate,wherein the lateral epitaxial pattern comprises:a first edge inclined with respect to the surface of the substrate;a second edge adjacent to the first edge and parallel to the surface of the substrate;a third edge parallel to the first edge, having a projection on the surface of the substrate at least entirely covering the second edge; anda fourth edge adjacent to the third edge,in which the second edge is the bottom of the groove structure; and a first intersection point between the second edge and the third edge on the second edge and an injection of a second intersection point between the third edge and the fourth edge on the second edge are located on two sides of a third intersection point between the first edge and the second edge, or the injection of the second intersection point between the third edge and the fourth edge on the second edge coincides with the third intersection point ...

OPTOELECTRONIC SEMICONDUCTOR DEVICE

An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively. 114.-. (canceled)15. An optoelectronic semiconductor device comprising:a first light source that emits green, white or white-green light and comprises a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip,a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range,a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, anda filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.16. The optoelectronic semiconductor device according to claim 15 , wherein the first conversion element converts at most 70% of the light from the semiconductor chip of the first light source claim 15 , and the filler body converts at least 5% of the light from the semiconductor chips claim 15 , emitting in the blue spectral range claim 15 , of the first and third ...

METHOD OF LASER IRRADIATION, LASER IRRADIATION APPARATUS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface. 1. (canceled)2. A method of manufacturing an active matrix display device comprising:forming a semiconductor film over a substrate;emitting a laser beam having a first cross section perpendicular to a propagation direction of the laser beam;expanding the laser beam along a first direction to increase the cross section of the laser beam along the first direction;regulating an optical path length of the expanded laser beam along the first direction using a concave lens;condensing the laser beam along a second direction orthogonal to the first direction; andincreasing crystallinity of the semiconductor film by scanning the semiconductor film with the laser beam along a third direction orthogonal to the first direction wherein the laser beam has a second cross section on a surface of the semiconductor film, the second cross section being larger than the first cross section along the first direction and shorter than the first direction along the third direction;after increasing the crystallinity, patterning the semiconductor film into a plurality of semiconductor layers, each including a region to become a channel forming region of a thin film transistor;forming an insulating layer over the plurality of semiconductor layers; andforming a plurality of pixel electrodes over the insulating layer.3. The method according to claim 2 , wherein the step of expanding the ...

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

DISPLAY APPARATUS, MANUFACTURING METHOD OF DISPLAY APPARATUS, AND ELECTRONIC DEVICE

A display apparatus includes: a display region provided with a plurality of pixel portions; wires installed to the respective pixel portions within the display region from an outside of the display region and transmitting a signal to drive the respective pixel portions; connection pads provided on the outside of the display region and serving as input portions that provide the wires with a signal while electrically conducting with the wires; switch elements provided on the outside of the display region in a middle of the wires; and a light shielding covering portion shielding the switch elements from light and formed to cover the connection pads while electrically conducting with the connection pads. 1. A display apparatus comprising:a display region including a plurality of pixel portions;one or more wires each connected to respective pixel portions from an outside of the display region to provide a corresponding signal to drive the respective pixel portions;a connection pad provided respectively for each of the one or more wires on the outside of the display region, the connection pad electrically connected with the wire and serving as an input portion via which the corresponding signal is provided to the wire;at least one switch element provided respectively for each of the one or more wires on the outside of the display region, the at least one switch element being connected between ends of the wire;a first light shielding covering portion provided over the at least one switch element to shield the at least one switch element from light; anda second light shielding covering portion provided on the connection pad such that the second light shielding covering portion covers the connection pad and is electrically connected to the connection pad.2. The display apparatus of claim 1 , wherein the first light shielding portion is connected to the second light shielding portion.3. The display apparatus according to claim 1 , wherein:each pixel portion includes an ...

OPTICAL DEVICE PROCESSING METHOD

An optical device processing method including: a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate; a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; and a dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips. 1. An optical device processing method comprising:a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate;a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; anda dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips.2. The optical device processing method according to claim 1 , wherein the grooves to be formed in the groove forming step are respectively aligned with the division lines to be formed in the film forming step.3. The optical device processing method according to claim 1 , wherein the sapphire substrate has a diameter of 8 inches or more and a thickness of 1 mm or less. 1. Field of the InventionThe present invention relates to a processing method for an optical device composed of a sapphire substrate and an epitaxial film formed on the sapphire substrate.2. Description of the Related ArtA nitride semiconductor such as gallium nitride (GaN) has a wide bandgap and allows the emission of blue light, so that it is widely used for the manufacture of LED (Light ...

LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE USING SAME

A light-emitting element includes a reflective electrode, a light-transmitting electrode disposed opposite the reflective electrode, a light-emitting layer emitting blue light disposed between the reflective electrode and the light-transmitting electrode, and a functional layer disposed between the reflective electrode and the light-emitting layer. The optical thickness of the functional layer is no less than 428.9 nm and no more than 449.3 nm. 1. A light-emitting element , comprising:a reflective electrode;a light-transmitting electrode disposed opposite the reflective electrode;a light-emitting layer emitting blue light and disposed between the reflective electrode and the light-transmitting electrode; anda functional layer disposed between the reflective electrode and the light-emitting layer, whereinthe functional layer has an optical thickness of no less than 428.9 nm and no more than 449.3 nm.2. The light-emitting element of claim 1 , whereinthe functional layer has a physical thickness of no less than 204 nm and no more than 300 nm, and has a refractive index of no less than 1.5 and no more than 2.1.3. The light-emitting element of claim 1 , further comprisinga colour filter disposed opposite the light-emitting layer with respect to the light-transmitting electrode.4. A light-emitting element claim 1 , comprising:a reflective electrode;a light-transmitting electrode disposed opposite the reflective electrode;a light-emitting layer emitting blue light and disposed between the reflective electrode and the light-transmitting electrode; anda functional layer disposed between the reflective electrode and the light-emitting layer, wherein{'b': 1', '2, 'claim-text': [{'b': 2', '1', '2, 'a first condition requiring an efficiency ratio that is equal to or greater than 0.85, the efficiency ratio being calculated by: taking, as the denominator, a value of the luminous efficiency E when the optical thickness of the functional layer has been adjusted to produce an extreme ...