Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 19. Отображено 16.
02-05-2013 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20130105760A1
Автор: KAWAHARA Takayuki, Kurotsuchi Kenzo, TAKEMURA Riichiro
Принадлежит: RENESAS ELECTRONICS CORPORATION

For example, one memory cell is configured using two memory cell transistors and one phase change element by disposing a plurality of diffusion layers in parallel to a bit-line, disposing gates between the diffusion layers so as to cross the bit-line, disposing bit-line contacts and source contacts alternately to the plurality of diffusion layers arranged in a bit-line direction for each diffusion layer, and providing a phase change element on the source contact. Also, the phase change element can be provided on the bit-line contact instead of the source contact. By this means, for example, increase in drivability of the memory cell transistors and reduction in area can be realized. 1. A semiconductor device comprising:a first transistor including a first impurity region formed in the semiconductor substrate and a second impurity region formed in the semiconductor substrate;a second transistor including the first impurity region and a third impurity region formed in the semiconductor substrate;a first film formed over the first transistor and second transistor, the first film retaining data based on electric resistance;a first wiring formed over the first transistor and second transistor; anda second wiring formed over the first transistor and second transistor,wherein the first transistor and the second transistor share the first impurity region,wherein a bottom surface of the first film is electrically connected to the first impurity region,wherein a top surface of the first film is electrically connected to the first wiring, andwherein the second impurity region and the third impurity region are electrically connected to the second wiring.2. A semiconductor device according to the claim 1 ,wherein the first transistor includes a first gate electrode formed over a semiconductor substrate,wherein the second transistor includes a second gate electrode formed over the semiconductor substrate, andwherein each of the first gate electrode and the second gate electrode ...

Подробнее
Номер записи: 1
15-08-2013 дата публикации

Metal-insulator transition switching devices

Номер: US20130207069A1
Автор: Alexandre M. Bratkovski, Frederick Perner, Matthew D. Pickett, Philip J. Kuekes, R. Stanley Williams, Wei Wu
Принадлежит: Hewlett Packard Development Co LP

A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region.

Подробнее
Номер записи: 2
31-01-2019 дата публикации

Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance

Номер: US20190036023A1
Автор: Elias A. FLORES, Jack A. CROWELL, Kenneth K. Tsang, Stephen K. Lam, Wei Yi, Xiwei Bai
Принадлежит: HRL LABORATORIES LLC

A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

Подробнее
Номер записи: 3
08-02-2018 дата публикации

Rectifier for Electromagnetic Radiation

Номер: US20180040820A1
Автор: Hoover Kyle W., Mann Chris W., Shvets Gennady
Принадлежит:

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described. 1. A rectifier for converting an oscillating electromagnetic field into a direct current comprising:(a) an electrically conductive antenna layer configured to absorb at least 1% of at least one selected wavelength of electromagnetic radiation;(b) an electrically conductive mirror layer, configured to provide an electromagnetic mirror charge of the antenna layer;(c) an electrically insulating barrier layer, positioned between the antenna layer and the mirror layer and having a thickness of about 0.3 nm to about 20 nm; and(d) an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer,{'sup': '−1', 'wherein the rectifier is configured to enable electron tunneling through the electrically insulating barrier layer and wherein the antenna layer and the mirror layer are selected to provide tunneling matrix elements that result in a responsivity factor greater than about 10 Vfor at least one voltage within the range from about −100 mV to about 100 mV.'}2. The rectifier of that is a diode for use in a photodetector.3. The rectifier of wherein the at least one selected wavelength of electromagnetic radiation is from about 150 ...

Подробнее
Номер записи: 4
04-04-2019 дата публикации

Metal-insulator-semiconductor-insulator-metal (misim) device, method of operation, and memory device including the same

Номер: US20190103441A1
Автор: Chang-Feng YANG, Hao-Hsiung Lin, Jenn-Gwo Hwu, Samuel C. Pan
Принадлежит: National Taiwan University NTU, Taiwan Semiconductor Manufacturing Co TSMC Ltd

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Подробнее
Номер записи: 5
16-04-2020 дата публикации

Electrical-Current Control Of Structural And Physical Properties Via Strong Spin-Orbit Interactions In Canted Antiferromagnetic Mott Insulators

Номер: US20200119274A1
Автор: Cao Gang
Принадлежит:

A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure. 1. A composition of matter consisting primarily of a stabilizing element and a transition metal oxide , wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions , and the composition of matter has a canted crystal structure.2. The composition of matter of claim 1 , wherein the transition metal oxide is a 4d or 5d transition metal oxide.3. The composition of matter of claim 1 , wherein the transition metal oxide is Iridium Oxide or Ruthenium Oxide.4. The composition of matter of claim 1 , wherein the anti-ferromagnetic Mott insulator has spin orbit interactions between 0.15 eV and 0.5 eV.5. The composition of matter of claim 1 , wherein the stabilizing element is selected from the group of Strontium claim 1 , Barium claim 1 , and Calcium.6. The composition of matter of claim 1 , wherein the composition of matter is a single crystal grown using a self-flux method.7. The composition of matter of claim 1 , wherein the composition of matter is selected from the group comprising: SrIrO claim 1 , SrIrTbO claim 1 , SrIrO claim 1 , BaIrO claim 1 , CaRuO claim 1 , and doped CaRuO.8. A method for electrical-current control of structural and physical properties of a material claim 1 , the method comprising:applying current along a first dimension of the material, wherein the material consists of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure; andwherein applying current along a first dimension of the material results in a change in size and resistivity of the material along a ...

Подробнее
Номер записи: 6
30-04-2020 дата публикации

Metal-insulator-semiconductor-insulator-metal (misim) device, method of operation, and memory device including the same

Номер: US20200135809A1
Автор: Chang-Feng Yan, Hao-Hsiung Lin, Jenn-Gwo Hwu, Samuel C. Pan
Принадлежит: National Taiwan University NTU, Taiwan Semiconductor Manufacturing Co TSMC Ltd

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Подробнее
Номер записи: 7
23-06-2016 дата публикации

REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF

Номер: US20160181523A1
Автор: Smith Don D.
Принадлежит: Freescale Semiconductor, Inc.

A real-space charge-transfer device is disclosed. In particular, a Gunn diode is disclosed having a conductive structure fabricated overlying its active region. A secondary signal, other than the normal Gunn diode signal, is generated by the Gunn diode based upon a characteristic of the overlying conductive structure. For example, when the conductive structure is a grate having N teeth the secondary signal will have N secondary oscillation cycles that occur during the duration of a single normal Gunn diode oscillation cycle. 1. A device comprising:a real-space charge-transfer device comprisinga first anode/cathode terminal spaced apart by a first instance from a second anode/cathode terminal;a semiconductor region coupled to the first and second anode/cathode, wherein current is to flow between the first anode/cathode terminal and the second anode/cathode terminal through the semiconductor region; anda conductive structure overlying the semiconductor region, the conductive structure being spaced apart from the semiconductor region by less than 2500 Angstroms and having a conductivity that is greater than the conductivity of the semiconductor region; anda filter comprising an input coupled to the second anode/cathode terminal, and an output, the filter configured to selectively pass a frequency component provided by the real-space charge-transfer device during operation that is based upon a characteristic of the conductive structure.2. (canceled)3. (canceled)4. The device of claim 1 , wherein the entire length of the semiconductor region is n-doped.5. (canceled)6. (canceled)7. The device of claim 1 , wherein the conductive structure comprises a number of repetitive features claim 1 , and the characteristic of the conductive structure is the number of features.8. The device of claim 1 , wherein the conductive structure comprises a first conductive tooth overlying a portion of the semiconductor region claim 1 , a length of the conductive tooth being less than a length ...

Подробнее
Номер записи: 8
09-08-2018 дата публикации

SCALABLE, STACKABLE, AND BEOL-PROCESS COMPATIBLE INTEGRATED NEURON CIRCUIT

Номер: US20180226453A1
Автор: Yi Wei
Принадлежит: HRL LABORATORIES, LLC

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device. 1. An integrated neuron circuit structure comprising at least one thin-film resistor , one Metal Insulator Metal capacitor and one Negative Differential Resistance device.2. The integrated neuron circuit of claim 1 , comprising first and second thin-film resistors claim 1 , first and second Metal Insulator Metal capacitors and first and second Negative Differential Resistance devices.3. The integrated neuron circuit of claim 2 , comprising:an input node connected, through the first thin-film resistor, to a first intermediate node common to the first Metal Insulator Metal capacitor and the first Negative Differential Resistance device; said intermediate node being connected, through the second thin-film resistor, to a second intermediate node of the integrated circuit; said second intermediate node being common to the second Metal Insulator Metal capacitor and the second Negative Differential Resistance device; and an output node connected to the second intermediate node.4. The integrated neuron circuit of claim 3 , wherein:the first Metal Insulator Metal capacitor is connected between said first intermediate node and a ground node; andthe second Metal Insulator Metal capacitor is connected between said second intermediate node and said ground node.5. The integrated neuron circuit of claim 3 , wherein:the first Negative Differential Resistance device is connected between said first intermediate node and a first voltage supply node; andthe second Negative Differential Resistance device is connected between said second intermediate node and a second voltage supply node.6. The integrated neuron circuit of claim 2 , wherein at least one of the first and second Negative Differential Resistance devices comprises a region of Negative Differential Resistance material located above claim 2 , and in electrical ...

Подробнее
Номер записи: 9
05-11-2015 дата публикации

GRAPHENE-BASED NON-BOOLEAN LOGIC CIRCUITS

Номер: US20150318856A1
Автор: BALANDIN Alexander A., Khitun Alexander, Lake Roger
Принадлежит: The Regents of the University of California

A dual-gate transistor having a negative differential resistance (NDR) region is disclosed. The dual-gate transistor includes a back-gate, a zero-bandgap graphene layer disposed on the back-gate, a top-gate disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate, and a drain disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate and displaced from the source. Also included is a dynamic bias controller configured to simultaneously sweep a source-drain voltage and a top-gate voltage across a Dirac point to provide operation within the NDR region. Operation within the NDR region is employed to realize non-Boolean logic functions. Graphene-based non-Boolean logic circuits are constructed from pluralities of the disclosed dual-gate transistor. Pattern recognition circuitry for operation between 100 GHz and 500 GHz is also disclosed via the graphene-based non-Boolean logic circuits. 1. A dual-gate transistor having a negative differential resistance (NDR) region comprising:a back-gate;a zero-bandgap graphene layer disposed on the back-gate;a top-gate disposed on a portion of the zero-bandgap graphene layer;a source disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate; anda drain disposed on a portion of the zero-bandgap graphene layer adjacent to the top-gate and displaced from the source, wherein the zero-bandgap graphene layer operates in the NDR region when a source-drain voltage and a top-gate voltage are simultaneously swept across a Dirac point.2. (canceled)3. The dual-gate transistor of wherein a sweeping range for the top-gate voltage and the source-drain voltage is defined by a top-gate capacitance in a position of the Dirac point.4. The dual-gate transistor of wherein the zero-bandgap graphene layer is made up of pristine graphene.5. The dual-gate transistor of wherein NDR is generated in a drift-diffusion regime at a micrometer scale.6. The dual-gate transistor of wherein NDR is ...

Подробнее
Номер записи: 10
13-12-2018 дата публикации

Multi-negative differential resistance device and method of manufacturing the same

Номер: US20180358412A1
Автор: Hae Won Lee, Jaewoo Shim, Jin Hong Park
Принадлежит: Research & Business Foundation Sungkyunwan University

Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.

Подробнее
Номер записи: 11
25-05-2023 дата публикации

Terahertz gunn oscillator using gallium nitride

Номер: US20230163724A1
Автор: Tadao Hashimoto
Принадлежит: SixPoint Materials Inc

The present invention provides a terahertz oscillator utilizing a GaN Gunn diode. A terahertz wave is generated in the active layer of the Gunn diode fabricated on GaN substrate. A GaN substrate is designed to act as a waveguide of the terahertz wave. Since the waveguide and the Gunn diodes are integrated, the terahertz wave generated in the active layer couples well with the waveguide made of the GaN substrates. The terahertz wave is emitted from the edge of the waveguide efficiently. To ensure high-reliability through reduction of radiation loss and mitigation of electromigration of anode metal, a GaN substrate with low dislocation density is used. The dislocation density of the GaN substrate is less than 1×10 6 cm −2 . Particularly, usage of a GaN substrate made by the ammonothermal method is preferred.

Подробнее
Номер записи: 12
16-09-2021 дата публикации

Metal-insulator-semiconductor-insulator-metal (misim) device, method of operation, and memory device including the same

Номер: US20210288110A1
Автор: Chang-Feng Yan, Hao-Hsiung Lin, Jenn-Gwo Hwu, Samuel C. Pan
Принадлежит: National Taiwan University NTU, Taiwan Semiconductor Manufacturing Co TSMC Ltd

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Подробнее
Номер записи: 13
14-03-2023 дата публикации

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

Номер: US11605674B2
Автор: Chang-Feng Yan, Hao-Hsiung Lin, Jenn-Gwo Hwu, Samuel C. Pan
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Подробнее
Номер записи: 14
01-06-2021 дата публикации

Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

Номер: US11024674B2
Автор: Chang-Feng Yan, Hao-Hsiung Lin, Jenn-Gwo Hwu, Samuel C. Pan
Принадлежит: National Taiwan University NTU, Taiwan Semiconductor Manufacturing Co TSMC Ltd

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Подробнее
Номер записи: 15
23-09-2020 дата публикации

유무기 하이브리드 할로겐화 페로브스카이트 기반의 부성미분저항을 갖는 부성미분저항 소자 및 회로

Номер: KR20200110114A
Автор: 김용훈, 에자즈 칸 무하마드, 이주호
Принадлежит: 한국과학기술원

본 발명은 유무기 하이브리드 할로겐화 페로브스카이트(organic-inorganic hybrid halide perovskite) 기반의 나노선을 이용하여 저전압 조건에서 부성미분저항(Negative Differential Resistance; NDR)을 갖는 양자 혼성화 부성미분저항 소자 및 회로에 관한 것으로, 유무기 하이브리드 할로겐화 페로브스카이트 물질로 형성된 채널부 및 상기 채널부의 양단에 연결된 무기틀(inorganic framework)로 구성된 전극부를 포함한다.

Подробнее
Номер записи: 16