ОДНОФОТОННЫЙ ИЗЛУЧАТЕЛЬ НА ОСНОВЕ ОДИНОЧНОЙ КВАНТОВОЙ ТОЧКИ

Предполагаемая полезная модель относится к области оптоэлектроники, конкретно - к устройствам со стимулированным излучением. Задача предполагаемой полезной модели - повышение эффективности процесса генерации одиночных фотонов. Технический результат достигается за счет использования оксидного кольца (Al,Ga)Ox, задающего токовую и оптическую апертуры и охватывающего активную область на основе слоя GaAs, содержащую одиночную квантовую точку InAs.

ИЗЛУЧАТЕЛЬ ТЕРАГЕРЦОВЫХ ЭЛЕКТРОМАГНИТНЫХ ВОЛН

Излучатель терагерцовых электромагнитных волн, содержащий подложку с нанесенными на нее широкозонными барьерными слоями, между которыми расположен активный слой с квантовой каскадной структурой, отличающийся тем, что активный слой имеет толщину 2d и выполнен в виде последовательно расположенных атомных монослоев твердого раствора ABпеременного состава, плавно изменяющегося вдоль направления, перпендикулярного к плоскости монослоев, в соответствии с формулой:F(z)=(k-b)/(2b){[1+4b((E-E)(z-d)/d+E-E)/(k-b)]-1},где z - расстояние от края ближнего к подложке барьерного слоя;E- ширина запрещенной зоны твердого раствора ABв точке z=d,Е- ширина запрещенной зоны барьерных слоев,Е- ширина запрещенной зоны полупроводника с составом B,kи b - коэффициенты зависимости ширины запрещенной зоны твердого раствора ABот его состава, которую определяют по формуле:E(F)=E+kF-bF(1-F).

ПОЛУПРОВОДНИКОВЫЙ ЭЛЕМЕНТ, ИЗЛУЧАЮЩИЙ СВЕТ В СИНЕЙ ОБЛАСТИ ВИДИМОГО СПЕКТРА

Изобретение относится к области полупроводниковых излучающих приборов, конкретнее к светодиодам на основе широкозонных нитридных соединений типа АIIIBV. Сущность: структура элемента последовательно включает подложку, буферный слой, выполненный из нитридного материала, n-контактный слой, выполненный из GaN, легированного Si, активный слой, с двумя или более квантовыми ямами, выполненными из InXGa1-XN и разделяющими эти ямы барьерами, выполненными из нитридного материала, легированного Si, эмиттерный слой, выполненный из AlYGa1-yN, легированного Mg, и р-контактный слой, выполненный из нитридного материала, легированного Mg. В InXGa1-XN мольная доля индия Х линейно уменьшается по толщине квантовых ям от 0,35 до 0,1 в направлении от п-контактного слоя. В составе эмиттерного слоя мольная доля алюминия Y линейно уменьшается от максимального значения 0,3+Z на поверхности эмиттерного слоя, граничащей с активным слоем, до значения Z, на поверхности эмиттерного слоя, граничащей с р-контактным слоем ...

Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung und Herstellungsverfahren

Polarisationsmodenselektiver Halbleiterlaser, Lichtquelle und optisches Kommunikationssystem unter Verwendung dieses Lasers

Halbleiterlaser mit variabler Oszillationswellenlänge.

Im blau-grünen Bereich emittierender Injektionslaser

Anordnung zur optischen Verbindung

Halbleiterlaserstrukturen.

QUANTENSCHICHTSTRUKTUR

Optische Halbleitervorrichtung

Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Halbleiterlaser

LICHTEMITTIERENDE VORRICHTUNG AUS SILIZIUM UND HERSTELLUNGSVERFAHREN

Monolithisch integriertes optisches oder optoelektronisches Halbleiterbauelement und Herstellungsverfahren

ABSTIMMBARE LASERQUELLE MIT INTEGRIERTEM OPTISCHEN VERSTÄRKER

INTEGRIERTER OPTO-ELEKTRONISCHER WELLENLÄNGENWANDLER

VERBESSERUNGEN FÜR OPTISCHE VORRICHTUNGEN

QUANTENKASKADENLASER MIT ANREGUNG DURCH OPTISCHE PHONONEN

OPTISCHE HALBLEITERVORRICHTUNG

Increasing bandwidth of optical semiconducting amplifier/superluminescence diode involves combining multiple quantum traps with different trap widths and/or of different materials

The method involves combining multiple quantum traps with different trap widths and/or of different materials and in which the two-dimensional distribution of charge carriers is dominated by the electrons and/or the holes, with different separated boundary hetero-structures, to form optical semiconducting amplifier/superluminescence diodes/LEDs/laser diodes with a large spectral width.

Semiconductor laser used as a VCEL comprises a laser-active layer formed between barrier layers, contacts for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers

Semiconductor laser comprises a laser-active layer (4) formed between a first and second barrier layer (2, 5), connecting contacts (1, 6) for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers. The laser-active layer or an intermediate layer (3) formed on the laser-active layer is ferromagnetic to form a spin orientation of the charge carrier spin of a charge carrier type.

Tunable laser

LASERS

SEMICONDUCTOR LASER DEVICE

Semiconductor optical devices and methods for fabricating semioconductor optical devices

SEMICONDUCTOR DEVICE

... 1282708 Bulk effect semiconductor circuits INTERNATIONAL BUSINESS MACHINES CORP 11 March 1970 [1 April 1969 (2)] 11549/70 Heading H3T [Also in Division H1] A device 10 exhibiting bulk negative resistance and comprising a semiconductor body whithin which the band-edge energy has a periodic spatial variation the periodicity of which is less than the carrier mean free path but greater than the lattice periodicity (see Division H1) may be included in the circuit illustrated in Fig. 8. The value of the load resistance R L may be chosen to cause the device 10 to operate in an astable oscillatory mode or a bistable switching mode controlled by input signals at a terminal 52. The entire circuit may be formed in a cavity, the inductance L and capacitance C then representing the distributed inductance and capacitance. Fig. 12 shows a pulse operated generator employing a device 10 provided with one ohmic electrode and one rectifying contact. Trigger pulses from a generator 70 are supplied, via choke ...

LASER DEVICES

Quantum dot structure

Method for producing a semiconductor device

In a method for producing a semiconductor device including etching an Al x Ga 1-x As (0 * less than or equal to * x * less than or equal to * 1) layer by a dry etching method, an etchant gas is used containing chlorine, a group V gas, and a hydrogen gas which are supplied at the same time, and said gas etching is carried out under conditions that a partial pressure of said group V gas is in a range from 8 x 10 -3 Torr to 0.08 Torr and the flow rate of said group V gas to said etching gas is lower than 2.5. A stripe-shaped SiN mask 21 extends along the ?0 1 1! direction to produce a ridge structure with planes 24, 25. Alternatively, if the mask 21 extends along the ?011! direction, a single sloping plane is produced.

Method for producing a semiconductor device

SEMICONDUCTOR DEVICE

Semiconductor device

Semiconductor device having a miniband

An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.

Semiconductor device and method of fabricating semiconductor device

A semiconductor device, such as a p-HEMT or a quantum well laser, includes a semiconductor base substrate (101 or 121) having a lattice constant and a surface; and a strained layer (3 or 24) grown on the surface of the semiconductor base substrate and comprising a semiconductor having a zinc-blende crystal structure with a lattice constant different from that of the semiconductor base substrate. The interface between the semiconductor base substrate and the strained layer is in a crystal plane which satisfies the relationship of (1 - * small Greek nu * cos 2 * small Greek alpha *)/cos * small Greek lambda * > 2(1 - * small Greek nu */4), where * small Greek nu * is the Poisson ratio, * small Greek alpha * is the angle between the Burgers vector and the dislocation line, and * small Greek lambda * is the angle between the Burgers vector and the direction in the interface, normal to the dislocation line, and the strained layer is epitaxially grown on the surface of the semiconductor base ...

Integrated optical device

Method of operating a photon source

Improvements in or relating to optical devices

A phonton source and method of operating a photon source

An optoelectronic semiconductor device

A semiconductor device 300 for use in an optoelectronic integrated circuit; the device 300 comprising: a group four substrate 16 e.g. silicon, a waveguide 14, and a group III/V multilayer stack 12; wherein the group III/V multilayer stack comprises a quantum component 10 e.g. dot, dash, or wire for producing light, e.g. laser, for the waveguide 14. The waveguide 14 comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8. The waveguide 14 may comprise silicon oxynitride (SiON), silicon nitride, amorphous silicon, glass (Al2O3), polymers or conductive oxides. The waveguide 14 may have a stepped or graded index. Also disclosed is a method of manufacturing the semiconductor device, which may include depositing the waveguide 14 on either side of the quantum component 10. The light produced may be optically coupled to the waveguide by a tapered coupling structure, which may facilitate evanescent coupling.

Light emitting devices with riddled barriers for electrons and holes

Light emitting diodes and laser diodes based on III-V and II-VI semiconductors comprising riddled barrier layers are disclosed. The riddled barrier 3 is a barrier layer provided with channels 50-500Ñ in diameter at a density of 109-1011 per square cm. The channels may be vertical paths or may be threaded dislocations. The riddles barrier layers may be GaAlN with GaInN channels, GaInP with AlInP channels or GaAlN with threaded dislocations. The barrier layers may be provided for electrons or holes or both.

A photon source

A photon source

Method of manufacturing optical devices and related improvements

Bandgap engineering

SEMICONDUCTOR OPTICAL SOURCE

SEMICONDUCTOR LASER

A photon source

IMPROVEMENTS OF OPTICAL SEMICONDUCTOR DEVICES WITH VERTICAL RESONATOR

CONTROLLING OF THE EJECTED BEAM DIVERGENCE IN A SEMICONDUCTOR TRANSVERSE ELECTROMAGNETIC WAVE ELEMENT

QUANTUM CASCADE LASER AND PROCEDURE FOR ITS PRODUCTION

DIODE LASER WITH INTERCVOLUME TUNNELING AND INTERSUBBAND TRANSITION

PROCEDURE FOR THE IMPROVEMENT OF THE EFFICIENCY OF EPITAKTISCH MANUFACTURE SEMICONDUCTOR COMPONENTS OF POINT OF QUANTUM

ZWEIDIMENSIONALES DISTRIBUTED-FEEDBACK HALBLEITER LASER ARRAY

Eine Laserlichtquelle (11) enthält eine Vielzahl von Laser-Einrichtungen (12), die jeweils in Form von Halbleiterlasern, insbesondere Quanten-Kaskaden-Lasern (QCL), mit einer ringförmigen DFB-Architektur ausgebildet sind; in jeder Ring-DFB-Einheit ist zumindest einem in einem Substrat befindlichen Lasermedium ein Interferenzgitter (14) zugeordnet, welches ringförmig geschlossen und quer zur Umfangsrichtung mit einer vorgegebenen Gitterperiode strukturiert ist. Die Laser-Einrichtungen befinden sich auf einem gemeinsamen Substrat in einer zweidimensionalen Array-Anordnung, wobei die Interferenzgitter (14) der Laser-Einrichtungen verschiedene Gitterperioden aufweisen.

HALBLEITERLASER

TIFF 00000016.TIF 297 213 ...

LIGHT WITH ANIMAL END OF SEMICONDUCTOR DEVICE.

IMPROVEMENTS FOR OPTICAL DEVICES

Nitride semiconductor device

Transmitter photonic integrated circuit

Quantum well intermixing

Tunable laser source with integrated optical amplifier

Extended wavelength strained layer lasers

Nitride semiconductor device

DIGITAL OPTICAL NETWORK ARCHITECTURE

A digital optical network (DON) is a new approach to low-cost, more compact optical transmitter modules and optical receiver modules for deployment in optical transport networks (OTNs). One important aspect of a digital optical network is the incorporation in these modules of transmitter photonic integrated circuit (TxPIC) chips and receiver photonic integrated circuit (TxPIC) chips in lieu of discrete modulated sources and detector sources with discrete multiplexers or demultiplexers.

IMPROVED INTEGRATED OPTICAL DEVICE

There is disclosed an improved integrated optical device (5a-5g) providing first and second devices (10a-10g; 15a, 15e), optically coupled one to the other and formed in first and second different material systems, one of the first or second devices (10a-10g, 15a, 15e) having a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material system may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbo3), a polymer, or glass.

SEMICONDUCTOR DIODE LASER SPECTROMETER ARRANGEMENT AND METHOD

A method apparatus for sensing gases using a semiconductor diode laser spectrometer, the method comprising: introducing a sample gas into a non- resonant optical cell (17); applying a step function electrical pulse (19) to a semiconductor diode laser (20) to cause the laser (20) to output a continuous wavelength chirp for injecting (16a) into the optical cell (17); injecting (16a) the wavelengh chirp into the optical cell (17); using the wavelength variation provided by the wavelength chirp as a wavelength scan, and detecting (23) light emitted from the cell (17), wherein a chirp rate is selected to substantially prevent light interference occuring in the optical cell (17).

QUANTUM DOT TUNABLE EXTERNAL CAVITY LASERS (QD-TEC LASERS)

A laser system includes a laser diode with a low dimensional nanostructure, such as quantum dots or quantum wires, for emitting light over a wide range of wavelengths. An external cavity is used to generate laser light at a wavelength selected by a wavelength--selective element. The system provides a compact and efficient laser tunable over a wide range of wavelengths.

SEMICONDUCTOR BULK OSCILLATOR

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor laser (200) comprises a semiconductor substrate (100), a pair of cladding layers (110, 150) formed on the substrate, a pair of undoped SCH layers (120, 140) disposed between the cladding layers (110, 150), and an active quantum well layer (130) disposed between the undoped SCH layers (120, 140). The waveguide loss of light output in leaky mode is smaller than the mode gain of the semiconductor laser because the existence of the SCH layers (120, 140) and the adequate film thickness of the cladding layers (110, 150). The laser provides low threshold current and high emission efficiency.

INFRARED SEMICONDUCTOR DEVICES

SEMICONDUCTOR LASERS WITH VARIED QUANTUM WELL THICKNESS

An optical emission device includes a semiconductor with conduction and valence bands and a plurality of quantum wells formed in the conduction and valence bands in a multiple quantum well active region such that recombination of holes and electrons between said quantum wells results in the emission of light. At least some of the quantum wells have different characteristic emission frequenices to broaden the gain spectrum of the emitted light.

SEMICONDUCTOR LASER DEVICE FOR USE IN A SEMICONDUCTOR LASER MODULE AND OPTICAL AMPLIFIER

A single semiconductor laser deviceused in a semiconductor laser module of an optical amplifier and having a first light emittingstripe with a diffraction grating and at least one othelight emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface ...

QUANTUM WELL INTERMIXING

The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple- wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

HIGH-POWER SAMPLED GRATING DISTRIBUTED BRAGG REFLECTOR LASERS

A tunable laser is disclosed including a gain section for creating a light beam over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a waveguide for guiding and reflecting the light beam in a cavity including a relatively low energy bandgap separate- confinement-heterostructure (SCH), a front mirror bounding an end of the cavity and a back mirror bounding an opposite end of the cavity wherein gain is provided by at least one of the group comprising the phase section, the front mirror and the back mirror.

N-TYPE MODULATION-DOPED MULTI QUANTUM WELL SEMICONDUCTOR LASER DEVICE

An n-type modulation dope multiple quantum well semiconductor laser having a multiple quantum well structure comprising a heterojunction structure of a well layer and a barrier layer, wherein the well layer is made of a nondoped semiconductor material, the barrier layer is made of a semiconductor material modulation-doped with an n-type dopant, a low-reflectance film is formed on the front edge face, a high-reflectance film is formed on the back edge face, the cavity length is 800 .mu.m or more, and the mirror loss (.alpha.m) expressed by .alpha.m=(1/2L)ln(1/(Rf.Rr)) (where L is the cavity length (cm), Rf is the reflectance of the front edge face, and Rr is the reflectance of the back edge face) is 15 cm-1 or less. The output of the laser is high compared with conventional nondoped MQW semiconductor lasers, and the industrial value of the laser used as, e.g., a 1480-nm laser for EDFA excitation is high.

OPTICAL SEMICONDUCTOR DEVICE WITH MULTIPLE QUANTUM WELL STRUCTURE

... ▓▓▓The invention relates to an optical semiconductor device comprising a multiple ▓quantum well structure, in which well layers and barrier layers consisting of ▓different types of semiconductor layers are stacked alternately on top of one ▓another. The invention is characterised in that the well layers (6a) have a ▓first composition, based on a nitride semiconductor material with a first ▓electron energy and the barrier layers (6b) have a second composition based on ▓a nitride semiconductor material with a higher electron energy in relation to ▓the first electron energy. An active radiative quantum well layer (6c) is ▓located downstream of said layers in the epitaxial direction and the ▓essentially non-radiative well layers (6a) positioned upstream, together with ▓the barrier layers (6b) form a superlattice for said active quantum well layer.▓ ...

TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TXPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TXPICS

... ²²²A photonic integrated circuit (PIC) chip comprising an array of modulated ²sources, each providing a modulated signal output at a channel wavelength ²different from the channel wavelength of other modulated sources and a ²wavelength selective combiner having an input optically coupled to received ²all the signal outputs from the modulated sources and provide a combined ²output signal on an output waveguide from the chip. The modulated sources, ²combiner and output waveguide are all integrated on the same chip.² ...

DYNAMICALLY RECONFIGURABLE OPTICAL AMPLIFICATION ELEMENT

Abstract of the Disclosure An optical amplifier has a spatially varying absorption spectrum formed in a monolithic InGaAsP structure whose quantum well active structure has modified effective bandgap properties. The effective bandgap properties can be modified by rapid thermal annealing to cause the diffusion of defects from one or two InP defect layers into the quantum well active structure. Multiple such optical amplifiers, having their effective bandgap properties modified to provide different gain spectra, can be monolithically formed in a single semiconductor structure for broadband amplification, in which case their individual gain spectra can be controlled to control the total gain spectrum dynamically. Alternatively, the optical amplifier can be used in a Mach-Zehnder wavelength converter for broadband wavelength conversion.

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER

A p-clad layer constituting the semiconductor laser device according to this invention includes an inner clad area near to an active layer, and an outer clad area remote from the active layer, the outer clad area having a narrower bandgap than that of the inner clad area, the thickness and the composition of the inner clad area being so set that beams do not substantially exude from the active layer to the outer clad area. A multi-quantum barrier structure is provided between the active layer and the p-clad layer. At least one of barrier layers of the multi-quantum barrier structure is formed of a material which applies tensile stress thereto, and at least one of well layers provided between one of the barrier layers and its adjacent one is formed of a material which applies contraction stress thereto, whereby an average lattice constant of the multi-quantum barrier agrees with that of a substrate. The use of a material in the barrier layers allows the bandgap to be sufficiently wide. Consequently ...

QUANTUM BARRIER SEMICONDUCTOR OPTICAL DEVICE

BLUE-GREEN LASER DIODE

A II-VI compound semiconductor laser diode (IO) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding la- sers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least I x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

SEMICONDUCTOR OPTICAL DEVICE

... : The present invention relates to an improvement for a semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light interact. For example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc. has a quantum well structure comprising a well region and a barrier region. A semiconductor optical device is disclosed which greatly improves the degree of freedom for the design of the device such as the thickness and the selection of material without deteriorating the quantum effect. This is achieved by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.

SEMICONDUCTOR LASER DIODE

In a semiconductor laser diode having a single- or multi-quantum well structure active layer, and a GRIN-SCH structure light confinement layer, a pair of cleaved facets for forming a resonator are covered with insulator films so as to make one facet low reflectivity and the other high reflectivity. Thus, a high output power in single axial mode can be produced from the low-reflectivity facet of the semiconductor laser diode.

OPTOELECTRONIC DEVICES UTILIZING MULTIPLE QUANTUM WELL PIN STRUCTURES AND A PROCESS FOR FABRICATING THE SAME

Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

FABRICATION OF QUANTUM WELL POLARIZATION INDEPENDENT ACTIVE DEVICES

An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficent to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hole bands to essentially produce a device that is completely polarization independent.

INP-BASED LASERS WITH REDUCED BLUE SHIFTS

An InP-based opto-electronic integrated circuit including an active layer having one or more quantum wells (36, 38). According to the invention, a barrier layer (34) of AlGaInAs is formed, preferably between the quantum wells and the substrate (30) to prevent the migration of species from the substrate and lower InP layers that tend to shift the emission wavelengths of the quantum wells to shorter wavelengths, i.e., blue shift. The barrier layer can be patterned so that some areas of the quantum wells exhibit blue shifting to a shorter wavelength while other areas retain their longer wavelength during annealing.

Avalanche quantum Intersubbandübergangs diode laser

Funnel structure vertical external chamber surface emitting laser

Quantum cascade laser

Optically pumped, surface-emitting semiconductor laser and method for producing the same

Semiconductor quantum point/quantum well conduction band inner transition material structure

The invention provides a material structure of semiconductor quantum dot/quantum well transition within carrying belt, which is characterized by including: a lower barrier layer which serves as a barrier of the quantum well to be mentioned in following; a quantum well layer which is arranged on the lower barrier layer and whose band gap is less than the same of the alternation barrier layer to be mentioned in following; an alternation barrier layer arranged on the quantum well layer and which serves as a barrier of the quantum well layer and the quantum dot layer to be mentioned in following to separate the two layers; a quantum dot layer arranged on the alternation barrier layer, and within which 3-d quantized discrete level can be formed by interaction of the alternation barrier layer and the upper barrier layer to mentioned in following; an upper barrier layer arranged on the quantum dot layer and which serves as a barrier of quantum dot layer.

Semiconductor laser with integrated slow optical waveguide on chip

Long wavelength pseudomorphic InGa NPAsSb type-1 and type-11 active layers for GAAS material system

Super-luminescent diode and method for manufacturing same

Laser combined with ultraviolet light and infrared light and production process thereof

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as ''nanowires'', include single-crystalline homostructuresas well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire(LOHN) and a coaxial heterostructure nanowire (COHN).

Simulation method for correlated photon pair source of electric pump Bragg reflection waveguide

High-reliability laser containing interface δ doping and preparation method thereof