Transistor With Embedded Si/Ge Material Having Reduced Offset and Superior Uniformity.

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Transistor With Embedded Si/Ge Material Having Reduced Offset and Superior Uniformity

Transistor With Embedded Si/Ge Material Having Reduced Offset and Superior Uniformity

Номер патента: US20120001254A1
Опубликовано: 05-01-2012
Автор(ы): Boschke Roman, Javorka Peter, Kronholz Stephan
Принадлежит: GLOBALFOUNDRIES INC.
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