09-01-2020 дата публикации
Номер: US20200010316A1
Принадлежит:
A MEMS microphone comprises a substrate (), a lower electrode layer (), a sacrificial layer (), a stress layer (), and an upper electrode layer (). The substrate () is centrally provided with a first opening (), and the lower electrode layer () stretches across the substrate (). The sacrificial layer (), the stress layer (), and the upper electrode layer () are sequentially laminated on the lower electrode layer (), and a second opening () is provided on the sacrificial layer () and the stress layer (). The second opening () is provided in correspondence with the first opening (). A stress direction of the stress layer () is reverse to a warpage direction of the substrate (). 1. An MEMS microphone , comprising a substrate , a lower electrode layer , a sacrificial layer , a stress layer , and an upper electrode layer; wherein the substrate defines a first opening in a middle portion thereof , the lower electrode layer spans the substrate; the sacrificial layer , the stress layer , and the upper electrode layer are sequentially laminated on the lower electrode layer; the sacrificial layer and the stress layer define a second opening corresponding to the first opening; a stress direction of the stress layer is opposite to a warping direction of the substrate.2. The MEMS microphone according to claim 1 , wherein the stress layer is a silicon nitride layer.3. The MEMS microphone according to claim 1 , wherein the stress layer is located at a periphery of a vibration active area of the upper electrode layer or the lower electrode layer claim 1 , and the vibration activity area is a position corresponding to the second opening.4. The MEMS microphone according to claim 1 , wherein the upper electrode layer is a flexible film serving as a diaphragm claim 1 , and the lower electrode layer is a rigid film serving as a back plate.5. The MEMS microphone according to claim 1 , wherein the upper electrode layer is a rigid film serving as a back plate claim 1 , and the lower ...
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