Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

Two- and three-terminal molecular electronic devices with ballistic electron transport

Two- and three-terminal molecular electronic devices with ballistic electron transport are described. For example, a two-terminal molecular electronic device includes a conductor 1 layer/molecule 1 layer/conductor2 layer junction, wherein the total thickness of the molecule 1 layer and the conductor2 layer is less than or approximately equal to the mean free path of a charge carrier traveling in the two layers, and wherein ballistic transport can occur for some fraction of a plurality of charge carriers in the two layers.

Organic molecular memory and method of manufacturing the same

An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.

Manufacturing method and manufacturing apparatus of functional element

According to one embodiment, the manufacturing method of a functional element includes filling a solvent comprising hydrogen gas and having organic molecules dispersed therein into a gap between the first electrode and the second electrode formed facing the first electrode, and forming an organic layer containing the organic molecules mentioned above between the first electrode and the second electrode.

Organic molecular device

An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional π-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the π-conjugated system chain.

Photosensitive field-effect transistor

A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel ( 13 ) made from a two-dimensional material and comprises a photoactive layer ( 22 ) which can be configured to donate charge carriers to the transistor channel ( 13 ) when electromagnetic radiation is absorbed in the photoactive layer ( 22 ). The photosensitive field-effect transistor comprises a top electrode ( 21 ) which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode ( 21 ), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.

Organic molecular memory

An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a π conjugated chain bonded to the linker group, and a phenyl group bonded to the π conjugated chain opposite to the linker group and facing the second conductive layer, the π conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the π conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.

Storage device and method for manufacturing the same

A storage device according to an embodiment includes a first conductive layer, a second conductive layer, and a resistance change layer. The resistance change layer is positioned between the first conductive layer and the second conductive layer. The resistance change layer including an organic compound. The organic compound has at least one first functional group selected from the group consisting of an amino group, a thiol group, a carboxy group, and an azide group, and the organic compound has one or less aromatic rings.

Photoelectric conversion element, solid-state imaging device, organic light-absorbing material, and organic light-absorbing material intermediate

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22 . The photoelectric conversion material layer 30 is formed of the following structural formula (1).

Flashing ratchets

Provided herein are flashing ratchets that produce transport based on the oscillating application of regularly-spaced, asymmetric potentials. In particular, devices are provided that transport electrons without the requirement of an overall source-drain bias favoring electron transport.

Imaging device and method for manufacturing imaging device

An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of −50 MPa to +60 MPa in the whole of the protective film.

Photodiode arrays

A technique comprising: forming on a support film a first stack of layers defining an array of photodiodes; forming over the first stack of layers in situ on the support film a second stack of layers defining electrical circuitry by which the photoresponse of each photodiode is independently detectable via an array of conductors outside the array of photodiodes; wherein forming the first stack of layers comprises depositing an organic semiconductor material over a first electrode, and depositing a second electrode over the organic semiconductor material, wherein the electrical circuitry comprises transistors including photosensitive semiconductor channels, and the second electrode also functions to substantially block the incidence of light on the photosensitive semiconductor channels from the direction of the support film.

Method for determining the oscillation parameters of turbo-machine blades and a device for putting the same into practice

Method for determining oscillation parameters of turbo-machine blades consists in that when the blade tip travels in front of a sensor, reading values of a single pulsed signal formed by the sensor are obtained in a number that is not lower than that of unknown parameters of a harmonic or polyharmonic oscillation of the blade, the origin of a single pulsed signal readings obtained for each blade being synchronized with the blade tip position relative to the sensor according to a given level of the single pulsed signal; then the values of the harmonic or polyharmonic oscillation parameters of the blade are calculated with the use of the obtained values of the single pulsed signal reading origins and of the value of the turbo-machine shaft revolution period.

Organic molecular memory

An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

有机半导体晶体薄膜及弱取向外延生长制备方法和应用

本发明涉及有机半导体晶体薄膜及弱取向外延生长制备方法。有机半导体晶体薄膜，既可以是n型半导体，也可以是p型半导体；本发明的有机半导体晶体薄膜有机半导体晶体中的分子站立在有序基板上取向排列，与有序基板存在取向关系。本发明制备有机半导体晶体薄膜可用于有机晶体管和有机光电三极管器件。本发明制备方法的优点是能够控制有机半导体晶体的高载流子迁移率方向在薄膜内取向有序，增强晶体之间的接触，提高薄膜的机械强度和微加工性质，载流子迁移率高，本发明弱取向外延生长薄膜为0.24cm 2 /Vs，是气相沉积膜的5倍，具有类单晶的性质。本发明制备方法的另一优点是适合玻璃基板和塑料基板。

Emittierende Polymere und Vorrichtungen diese Polymere enthaltend

光电转换元件

一种光电转换元件，其包括至少一个为透明或半透明的一对电极和位于该电极之间的光活性层，并且所述光活性层含有给电子性化合物和受电子性化合物，该给电子性化合物或该受电子性化合物是含有式(I)所示的重复单元的高分子化合物，该高分子化合物中含有的全部重复单元中式(I)所示的重复单元的比率最大。 式中，R 1 、R 2 、R 3 、R 4 、R 5 和R 6 相同或相异，表示氢原子或取代基，另外，R 1 、R 2 、R 3 、R 4 、R 5 和R 6 也可以分别相互连结形成环状结构，X 1 、X 2 和X 3 相同或相异，表示硫原子、氧原子、硒原子、-N(R 7 )-或-CR 8 ＝CR 9 -，R 7 、R 8 和R 9 相同或相异，表示氢原子或取代基，n和m相同或相异，表示0～5的整数，当R 1 、R 2 、R 5 、R 6 、X 1 和X 3 为多个时，它们相同或相异。

미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법

본 발명의 일 측면에 따라 미세 패턴 형성 방법이 제공된다. 상기 미세 패턴 형성 방법은 기판 위에 원형 또는 타원형의 단면을 가지고 있는 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 형성하는 단계; 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성된 상기 기판의 전면(全面) 위에 물질층을 형성하는 단계; 및 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴이 형성되지 않은 부분의 상기 물질층만 남도록 상기 기판으로부터 상기 유기 와이어 또는 유무기 하이브리드 와이어 마스크 패턴을 제거하는 단계; 를 포함한다.

光电转换装置

本发明涉及一种光电转换装置，其包括一光电转换模组，其中，该光电转换模组包括一碳纳米管结构及一覆盖结构，该碳纳米管结构包括至少一根碳纳米管，该碳纳米管包括一半导体性碳纳米管片段以及分别与该半导体性碳纳米管片段的两端连接的两个金属性碳纳米管片段，该覆盖结构遮盖于半导体性碳纳米管片段的部分区域，该部分区域即为遮盖区域。

Organic light-emitting display device

本发明涉及有机发光显示装置，包括：柔性基板；驱动电路部，形成在所述柔性基板上，包括薄膜晶体管；有机发光元件，形成在所述柔性基板上，与所述驱动电路部连接；封装层，形成在所述柔性基板上，用于覆盖所述有机发光元件及所述驱动电路部；以及第一保护膜，设置在所述封装层上，包括粘接层、补强层及树脂层。

Organic light emitting display device

本发明涉及有机发光显示装置，包括：柔性基板；驱动电路部，形成在所述柔性基板上，包括薄膜晶体管；有机发光元件，形成在所述柔性基板上，与所述驱动电路部连接；封装层，形成在所述柔性基板上，用于覆盖所述有机发光元件及所述驱动电路部；以及第一保护膜，设置在所述封装层上，包括粘接层、补强层及树脂层。

Polymer Devices

A method for forming an electronic device having a region comprising a semiconductive polymer material, the method comprising depositing the semiconductive polymer by a process which promotes ordering in the deposited polymer.

A photoresponsive device

Light receiving module and Dust sensor including thereof

본 발명은 광 신호를 조사하는 발광부, 광 신호의 광 경로 상에 위치하여 광 신호를 집중시키는 집광부, 집중된 광 신호가 먼지에 조사되어 경로가 변경된 산란광을 수신하는 수광부를 포함하고, 수광부는, 집광부에 의해 집중된 광 신호의 광 경로 중심축이 연장된 지점에 개구가 형성되어 광 신호가 투과하는 먼지 센서 및 수광 모듈에 관한 것이다.

Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof

本发明涉及一种基于有机晶态异质结的紫外光晶体管及其制备方法，紫外光晶体管包括自上而下依次设置的基底、绝缘层、模板层、晶态有机异质结光敏层以及源漏电极，模板层为七联苯，晶态有机异质结光敏层包括p型有机半导体光敏层和n型有机半导体光敏层，p型有机半导体光敏层和n型有机半导体光敏层依次沉积在模板层上。本发明基于有机晶态异质结的紫外光晶体管通过引入晶态有机异质结，晶态有机异质结高效的载流子输运对光的协同吸收效应以及异质结界面效应对激子分离的促进作用，使得器件的光电学性能有了显著的影响，而且制备方法简单快速，具有普适性，易于工业化生产。

A kind of novel photoelectric position sensitive detector

本发明公开了一种新型光电位置敏感传感器，包括透明衬底(101)、ITO背电极(201)、N型层(301)、I型层(401)、P型层(501)、第一电极(601)和第二电极(602)组成。通过传感器整体结构和各功能层的巧妙设计，本发明的新型光电位置敏感传感器性能优异，制备简单，成本低廉，基底兼容性好，易于制成大面积器件。

A kind of solar cell based on the inorganic build hetero-junction thin-film of ternary and preparation method thereof

本发明公开了一种基于三元无机体型异质结薄膜的太阳电池的制备方法。在玻璃衬基上依次沉积有ITO阳极、三元无机体型异质结薄膜、有机共轭聚合物PCPDTBT薄膜、PEDOT:PSS薄膜、Au阴极。电池具有0.62‑0.65V的高开路电压和300‑850nm的宽光谱响应范围；在大气环境和室温条件下，当整个太阳电池的光活性层处于光照状态时，器件的转换效率达到6.08%。本发明中，电池材料和器件的制备方法简便，对设备要求低，适合大规模应用，在光伏材料和低价太阳电池器件等领域具有很大的应用价值。

Highly sensitive photoconductor based on amorphous fullerene or deriv.

Photoconductor comprises material selected from fullerene(s) and deriv(s). with amorphous structure. Also claimed are a method of producing the photoconductor and the prods. obtd..

Organic thin film element

Method of determining parameters of oscillations of blades of rotating wheel of turbine machine and device therefor

FIELD: measuring equipment. SUBSTANCE: invention is intended for contact-free determination of amplitude, frequency and phase of oscillations of blades of turbine units and can be used for determination of defects of turbomachine blades during their operation. Method consists in setting on fixed unit of turbo-machine reverse pulse sensor and exciter-recycled mark, as well as in case of turbo-machine, in plane of rotation of controlled bladed wheel over path of ends fixed contact-free peripheral sensor is installed. Sensor records data signals of peripheral primary transducer interaction with end of blades. On basis of reference literature analytical expression is determined and system of nonlinear equations is solved. EFFECT: high accuracy and reliability of determining amplitude, frequency and oscillation phase of all blades in rotating wheel of turbine machine. 2 cl, 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК G01H 11/06 (13) 2 584 723 C1 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2015103552/28, 03.02.2015 (24) Дата начала отсчета срока действия патента: 03.02.2015 (45) Опубликовано: 20.05.2016 Бюл. № 14 2 5 8 4 7 2 3 R U (54) СПОСОБ ОПРЕДЕЛЕНИЯ ПАРАМЕТРОВ КОЛЕБАНИЙ ЛОПАТОК ВРАЩАЮЩЕГОСЯ КОЛЕСА ТУРБОМАШИНЫ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ (57) Реферат: Изобретение предназначено для устанавливают неподвижный бесконтактный бесконтактного определения амплитуды, частоты периферийный датчик. Датчик регистрирует и фазы колебаний лопаток турбоагрегатов и информационные сигналы взаимодействия может быть использовано для определения периферийного первичного преобразователя с дефектов лопаток турбомашин в процессе их торцом лопаток. На основании данных эксплуатации. Способ заключается в справочной литературы определяют установлении на неподвижном узле турбомашины аналитическое выражение, решают систему оборотного импульсного датчика и возбудителя нелинейных уравнений. Технический результат - ...

Electronic device

An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a “low” state by irradiation, and can be switched to a “high” state by applying a gate bias voltage. This can be useful for a memory device.

Perylene imide/diimide based organic field effect transistors-ofets and a method of producing the same

This invention relates to a method of solution-processed construction of ambipolar, air stable organic field-effect transistors (OFETs) based on perylene diimide/imide derivatives that absorb in visible region and the product obtained therefrom. The synthesis, design and application of ambipolar organic field-effect transistors (OFETs) based on N,N'-bis(dehydroabietyl)-3,4,9,10-perylene diimide (PDI) derivative has shown electron mobility, µe ≈ 7 x 10-5 cm2.V-1.s-1 and hole mobility,µh ≈ 8 x 10-5 cm2.V-1.s-1. Less soluble, air stable, unipolar n-channel OFET based on N-(cyclohexyl) perylene-3,4,9,10-tetracarboxylic-3,4-anhydride-9,10-imide showed an electron mobility of µe ≈ 10-5 cm2.V-1.s-1.

Low-voltage floating gate photoelectric memory and preparation method thereof

本发明提供了一种低压浮栅光电存储器及制备方法，从下到上依次包括衬底、栅极电极、第一栅极介电层、第二栅极介电层、电荷存储层、半导体层和漏源电极。本发明溶液过程制备第一、第二栅极介电层和浮栅层，优点为成本低、易于加工、可大面积制造以及与柔性衬底兼容好；本发明器件的工作电压都不高于5 V。

Perylene imide/diimide based organic field effect transistors-OFETs and a method of producing the same

This invention relates to a method of solution-processed construction of ambipolar, air stable organic field-effect transistors (OFETs) based on perylene diimide/imide derivatives that absorb in visible region and the product obtained therefrom. The synthesis, design and application of ambipolar organic field-effect transistors (OFETs) based on N,N'-bis(dehydroabietyl)-3,4,9,10-perylene diimide (PDI) derivative has shown electron mobility, µ e ≈ 7 x 10 -5 cm 2 .V -1 .s -1 and hole mobility, µ h ≈ 8 x 10 -5 cm 2 .V -1 .s -1 . Less soluble, air stable, unipolar n-channel OFET based on N-(cyclohexyl)perylene-3,4,9,10-tetracarboxylic-3,4-anhydride-9,10-imide showed an electron mobility of µ e ≈ 10 -5 cm 2 .V -1 .s -1 .

Photo detector utilizing graphene film and nano particles

그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법을 제공한다. 본 발명의 광검출기는, 기상 탄소 공급원을 이용한 그래핀 증착을 통해 제작한 시트 형상의 그래핀 박막; 및 상기 그래핀 박막 위에 형성되며 상기 그래핀 박막의 전극 영역을 정의하도록 패터닝되어 있고 매트릭스 물질 없이 나노 입자로 이루어진 나노 입자층을 포함한다. 이러한 광검출기는 그래핀 박막을 채널 및 전극으로 사용하고 나노 입자를 광기전력 물질(자외선에 의한 광기전력으로 전자-정공쌍을 형성)로 사용하는 수평형 구조이며 매우 간단한 구조이므로 저비용으로 제조할 수 있어 생산성이 높을 뿐만 아니라, 그래핀 박막을 포함함에 따라 저전력화할 수 있다. Provided are a photodetector using a graphene thin film and nanoparticles, and a method of manufacturing the same. The photodetector of the present invention comprises a sheet-like graphene thin film produced by graphene deposition using a gaseous carbon source; And a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film and consisting of nanoparticles without a matrix material. This photodetector is a horizontal structure that uses graphene thin films as channels and electrodes, and nanoparticles as photovoltaic materials (electron-hole pairs formed by photovoltaics by ultraviolet rays). In addition, productivity is high, and the graphene thin film can be included to reduce the power.

Active electronic devices with nanowire composite components

Active, electrical, electronic and optoelectronic components and structures are fabricated to include composites containing electrically conductive nanostructures as part thereof. These nanostructures include nanowires, nanofibres, nanoribbons, nanoplates or nanotubes as single structures or an assembly of multiple structures. They are composed of carbon or other conductive materials.

A kind of photosensitive sensor and preparation method thereof based on organic field-effect tube

本发明公开了一种基于有机场效应晶体管的光敏传感器及其制备方法，该制备方法，包括：对衬底进行清洗和干燥处理；采用金属纳米线，在清洗和干燥处理后的所述衬底的表面制备栅电极；将有机介电材料按比例进行超声配比，然后用配比后的溶液，在所述栅电极上面制备介电层；将有机半导体材料与叶绿素按比例进行超声混合，然后用混合后的溶液，在介电层上制备半导体层；采用金属纳米线，在所述半导体层上制备源电极和漏电极；采用虫胶，在所述源电极和漏电极上面制备封装层。本发明通过采用有机半导体材料与叶绿素的混合材料制备光敏传感器的半导体层，使得制备的光敏传感器相比传统的光敏传感器，具有高响应度和高稳定性的特点。

Functional molecular element

switching device

Schaltvorrichtung mit zwei stabilen Widerstandswerten bei einer zwischen Elektroden angelegten Spannung, wobei die Schaltvorrichtung Dünnschichten einer ersten Elektrodenschicht, einer organischen bistabilen Materialschicht und einer zweiten Elektrodenschicht aufweist, die der Reihe nach auf einem Substrat gebildet sind, dadurch gekennzeichnet, dass das organische bistabile Material eine Chinonverbindung mit der allgemeinen Formel (I) ist: [Chemische Formel 1]worin R1, R2, R3 und R4, die gleich oder voneinander verschieden sein können, ein Wasserstoffatom, eine Alkylgruppe mit 1 bis 6 Kohlenstoffatomen, die einen oder mehrere Substituenten tragen kann, oder eine Arylgruppe, die einen oder mehrere Substituenten tragen kann, bedeuten; R5 und R6, die gleich oder voneinander verschieden sein können, ein Wasserstoffatom, eine Alkylgruppe mit 1 bis 6 Kohlenstoffatomen, die einen oder mehrere Substituenten tragen kann, eine Arylgruppe, die einen oder mehrere Substituenten aufweisen kann, eine Alkoxygruppe oder ein Halogenatom darstellen; „A” eine der nachstehenden Formeln (A-1) bis (A-9) darstellt; und 1 eine Zahl von 1 bis 4 ... A switching device having two stable resistance values at a voltage applied between electrodes, the switching device comprising thin layers of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, characterized in that the organic bistable material is a quinone compound wherein the general formula (I) is [Chemical Formula 1] wherein R 1, R 2, R 3 and R 4, which may be the same or different, are a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may carry one or more substituents, or an aryl group which may carry one or more substituents; R 5 and R 6, which may be the same or different, represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may carry one or more substituents, an aryl group which may have one or more substituents, an alkoxy group ...

Organic electronic device and method of fabricating the same

The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

DEVICE FOR CONNECTING AT LEAST ONE NANO-OBJECT ASSOCIATED WITH A CHIP ENABLING A CONNECTION TO AT LEAST ONE EXTERNAL ELECTRICAL SYSTEM AND ITS IMPLEMENTATION METHOD

Réalisation d'un dispositif pour connecter un nano-objet à un système électrique externe (SEE) comprenant : - une première puce dotée de zones conductrices (8a, 8b) et d'un premier nano-objet (50) connecté aux zones conductrices, la première puce étant assemblée sur un support (70) de sorte que le premier nano-objet est disposé en regard d'une face supérieure du support, le dispositif étant doté en outre de premiers éléments de connexion (80a, 80b) aptes à être connectés au système électrique externe et disposées sur et en contact des premières zones conductrices (8a, 8b), les premiers éléments de connexion étant formés du côté de la face supérieure du support (70) et étant accessibles du côté de la face supérieure du support.

DEVICE FOR CONNECTING AT LEAST ONE NANO-OBJECT ASSOCIATED WITH A CHIP ENABLING A CONNECTION TO AT LEAST ONE EXTERNAL ELECTRICAL SYSTEM AND ITS IMPLEMENTATION METHOD

Réalisation d'un dispositif pour connecter un nano-objet à un système électrique externe (SEE) comprenant : - une première puce dotée de zones conductrices (8a, 8b) et d'un premier nano-objet (50) connecté aux zones conductrices, la première puce étant assemblée sur un support (70) de sorte que le premier nano-objet est disposé en regard d'une face supérieure du support, le dispositif étant doté en outre de premiers éléments de connexion (80a, 80b) aptes à être connectés au système électrique externe et disposées sur et en contact des premières zones conductrices (8a, 8b), les premiers éléments de connexion étant formés du côté de la face supérieure du support (70) et étant accessibles du côté de la face supérieure du support. Realization of a device for connecting a nano-object to an external electrical system (SEE) comprising: - a first chip having conductive areas (8a, 8b) and a first nano-object (50) connected to the conductive areas, the first chip being assembled on a support (70) so that the first nano-object is disposed facing an upper face of the support, the device being further provided with first connection elements (80a, 80b) adapted to be connected to the external electrical system and arranged on and in contact with the first conductive regions (8a, 8b), the first connection elements being formed on the side of the upper face of the support (70) and being accessible on the side of the upper face of the support .

SEMICONDUCTOR DEVICE WITH NANOTUBE OR NANOFIL, CONFIGURABLE OPTICALLY

PHOTORESISTANCE WITH IMPROVED SENSITIVITY

La photorésistance (1) comprend deux électrodes (2a, 2b) reliées par une couche photosensible (3) de la photorésistance (1) et au moins une couche additionnelle (6, 7) en contact avec la couche photosensible (3) pour avoir une action sur le comportement de la photorésistance vis-à-vis de la collecte des porteurs entre les deux électrodes (2a, 2b) en vue d'améliorer la sensibilité de la photorésistance (1).

Patent FR2360177B3

Patent FR3039531A1

La présente invention concerne une pluralité de nanocristaux de chalcogénure de métal enrobées avec de multiples ligands organiques et inorganiques; dans lequel ledit métal est choisi parmi Hg, Pb, Sn, Cd, Bi, Sb ou un de leurs mélanges; et ledit chalcogène est choisi parmi S, Se, Te ou un de leurs mélanges; dans lequel lesdits plusieurs ligands inorganiques comprennent au moins un acide ligands inorganiques sont choisis parmi S2-, SH-, Se2-, Te2-, OH-, BF4-, PF6-, Cl-, Br-, I-, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 ou un mélange de ceux-ci; et dans lequel l'absorption des liaisons CH des ligands organiques par rapport à l'absorption de nanocristaux de chalcogénure métallique est inférieure à 50 %, de préférence inférieure à 20 %. The present invention relates to a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein said metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and said chalcogen is selected from S, Se, Te or a mixture thereof; wherein said plurality of inorganic ligands comprise at least one inorganic ligand acid are selected from S2-, SH-, Se2-, Te2-, OH-, BF4-, PF6-, Cl-, Br-, I-, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 or a mixture thereof; and wherein the absorption of the CH bonds of the organic ligands with respect to the absorption of metal chalcogenide nanocrystals is less than 50%, preferably less than 20%.

Photoelectric conversion device

Photoelectric conversion element, image pickup element, optical sensor, and compound

The present invention provides a photoelectric conversion element, an image pickup element, an optical sensor, and a compound that exhibit excellent external quantum efficiency and responsiveness with respect to light having any wavelength among a red wavelength range, a green wavelength range, and a blue wavelength range. The photoelectric conversion element according to the present invention comprises a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, wherein the photoelectric conversion film contains a compound represented by formula (1).

Illumination sensitive current control device

A semiconductor device that includes a layer of highly crystalline semiconductor material positioned on an insulating substrate. The semiconductor device also includes a source structure and a drain structure positioned on the layer of highly crystalline semiconductor material. The semiconductor device also includes a photoelectric element positioned on the layer of highly crystalline semiconductor material. The photoelectric element forms an electrical junction with the layer of highly crystalline semiconductor material. The photoelectric element is positioned between the source structure and the drain structure. The photoelectric element is also electrically floating.

Nanotube optoelectronic memory devices

Nanotube transistors are coated with optically responsive agents to form optoelectronic detectors. In response to illumination, an electronic property of the inventive detector changes from one value to another. It retains the new value when the illumination is removed, so that the detector remembers having been illuminated. The detector can be reset by changing a gate voltage. Spectral response of the detectors can be changed by using different agents as coating. Multiple detectors with different agents can be combined on one substrate to form a combined detector that discriminates between radiation of different wavelengths.

Carbon nanotube-based electronic devices made by electronic deposition and applications thereof

Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e.g., by application of bias voltage) in an amount sufficient to form the semiconducting device. The devices of the invention include, but not limited to, chemical or biological sensors, carbon nanotube field-effect transistors (CNFETs), tunnel junctions, Schottky junctions, and multi-dimensional nanotube arrays.

Electronic device manufacturing method

Functional molecular element

본 발명은 컬럼모양(狀)(columnar) 배열 구조체를 형성하는 원반모양(圓盤狀; disk)에 가까운 유기 금속 착체 분자(有機金屬錯體分子; organometallic complex molecule)(1)의 컴포메이션(conformation)을, 전계의 인가에 의해서 변화시키고, 기능을 발현(發現)하는 기능성 분자 소자이며, 전계의 인가에 의해 유기 금속 착체 분자의 구조가 변화하고, 유전율 이방성(誘電率異方性)이 변화한다. 따라서, 측정 전극 사이의 도전성(導電性)을 스위치할 수 있고, 그 안정값은 3종류 이상 있으며, 그 다값(多値; multi values) 메모리성(性)을 응용한 소자를 구성할 수가 있다. The present invention relates to the formation of an organometallic complex molecule (1) close to a disk, which forms a columnar array structure. ) Is a functional molecular element that changes its function by application of an electric field, and the structure of the organometallic complex molecule changes and its dielectric anisotropy changes by application of an electric field. . Therefore, the conductivity between the measuring electrodes can be switched, and there are three or more kinds of stable values, and an element in which the multi-value memory property is applied can be configured.

Electronic element

금속 나노 입자를 사용하지 않아도, 스위칭이나 메모리로서 기능하는 전자 소자를 제공한다. 전자 소자가, 나노 갭을 가지도록 배치된 한쪽의 전극 및 다른 쪽의 전극(5A, 5B)과, 한쪽의 전극(5A)과 다른 쪽의 전극(5B) 사이에서 적어도 어느 하나의 전극 상에 형성된 할로겐 이온(6)을 구비한다. 한쪽의 전극(5A)과 다른 쪽의 전극(5B) 사이에 전압을 플러스의 값으로부터 마이너스의 값까지, 마이너스의 값으로부터 플러스의 값까지 연속하여 반복 변화시키면, 한쪽의 전극(5A)과 다른 쪽의 전극(5B) 사이에 흐르는 전류 파형이 비대칭으로 된다. 한쪽의 전극(5A)과 다른 쪽의 전극(5B) 사이에 인가하는 전압의 값에 따라 할로겐 이온(6) 상태를 변화시켜, 한쪽의 전극(5A)과 다른 쪽의 전극(5B) 사이에 흐르는 전류의 값에 대응시켜 정보의 기입 상태와 정보의 소거 상태를 유지한다. An electronic device that functions as a switching or memory device without using metal nanoparticles is provided. An electronic device is formed on at least one electrode between one electrode and the other electrodes 5A, 5B arranged to have a nanogap, and one electrode 5A and the other electrode 5B. And halogen ions 6. If the voltage between the one electrode 5A and the other electrode 5B is continuously changed from a positive value to a negative value, and continuously from a negative value to a positive value, the one electrode 5A and the other The current waveform flowing between the electrodes 5B of A becomes asymmetric. The state of the halogen ion 6 is changed according to the value of the voltage applied between one electrode 5A and the other electrode 5B, and flows between one electrode 5A and the other electrode 5B. Corresponding to the current value, the information writing state and the information erasing state are maintained.

Optically-configurable nanotube or nanowire semiconductor device

The invention relates to a semiconductor device comprising at least one nanotube or nanowire, such as a carbon nanotube or nanowire, as well as two electrodes. The invention is characterised in that the device comprises at least one semiconductor nanotube or nanowire having at least one region which is at least partially covered with at least one layer of molecules or nanocrystals made from at least one photo-sensitive material. According to the invention, an electrical connection is provided between the two electrodes by at least one nanotube, namely the semiconductor nanotube or nanowire, and optionally at least one other nanotube or nanowire.

Macromolecular compound and electronic component

本发明将含有式(1)所示的构成单元和式(2)所示的构成单元的高分子化合物用于有机光电转换元件中的有机层，从而可以提高光电转换效率。 [式(1)中，R 1 表示氢原子或取代基。Y 1 表示氧原子、硫原子或-N(R 3 )-。R 3 表示氢原子或取代基。环Z 1 和环Z 2 分别独立地表示可以具有取代基的芳香族碳环或可以具有取代基的杂环。] [式(2)中，R 2 与R 1 不同且表示氢原子或取代基。Y 2 表示氧原子、硫原子或-N(R 3 )-。R 3 表示氢原子或取代基。环Z 3 和环Z 4 分别独立地表示可以具有取代基的芳香族碳环或可以具有取代基的杂环]。

A kind of perovskite solar cell for vulcanizing composite electron transmission Rotating fields

一种硫化复合电子传输层结构的钙钛矿太阳能电池，涉及钙钛矿太阳能电池。包括依次叠加的导电衬底、硫化复合电子传输层、钙钛矿吸光层、空穴传输层和背电极；所述硫化复合电子传输层由ZnO层和ZnS层构成，ZnS介于ZnO和钙钛矿吸光层之间。具有效率高、迟滞小及寿命长等优点，而且硫化复合电子传输层的制备方法简单快捷，重复性高。能够形成合理的能级匹配，能有效传导电荷。

Semiconductor Device

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Two- and three-terminal molecular electronic devices with ballistic electron transport

Two- and three-terminal molecular electronic devices with ballistic electron transport are described. For example, a two-terminal molecular electronic device includes a conductor 1 layer/molecule 1 layer/conductor2 layer junction, wherein the total thickness of the molecule 1 layer and the conductor2 layer is less than or approximately equal to the mean free path of a charge carrier traveling in the two layers, and wherein ballistic transport can occur for some fraction of a plurality of charge carriers in the two layers.

In the method for halide perovskite thin film surface production metal micro-nanostructure

一种在卤化物钙钛矿薄膜表面制作金属微纳结构的方法，包括步骤：制备卤化物钙钛矿薄膜；在卤化物钙钛矿薄膜表面制作一层派瑞林薄膜；在派瑞林薄膜表面制作一层光刻胶薄膜；利用光刻工艺将光刻胶薄膜制作成带微纳结构的掩膜；刻蚀派瑞林薄膜，将掩膜上的微纳结构图形转移到派瑞林薄膜上；将金属薄膜沉积到卤化物钙钛矿薄膜和光刻胶薄膜表面；将光刻胶及其表面的金属薄膜剥离得到金属微纳结构。本发明能够避免卤化物钙钛矿与水的接触，在卤化物钙钛矿表面利用半导体工艺制作金属微纳结构，应用于卤化物钙钛矿光电器件芯片的制备中，可以提高卤化物钙钛矿光电器件芯片的性能。

Electronic device utilizing graphene electrodes and organic/inorganic hybrid composites and method for manufacturing the same

나노 입자가 포함된 고분자 박막을 형성하고 그래핀을 전극으로 활용하여 소자의 성능을 향상시킨 전자 소자 및 그 제조 방법을 제시한다. 본 발명에 따른 전자 소자는 나노 입자가 포함된 고분자 박막과, 기상 탄소 공급원을 이용한 그래핀 증착을 통해 제작한 시트 형상의 그래핀 박막을 상기 고분자 박막 상에 부착시켜 형성한 전극을 포함한다. 본 발명에 따른 전자 소자 제조 방법에서는 기상 탄소 공급원을 이용한 그래핀 증착을 통해 시트 형상의 그래핀 박막을 제작하고, 나노 입자가 분산된 고분자 용액을 준비한다. 소자용 기판 위에 이 나노 입자가 분산되어 있는 고분자 용액을 스핀 코팅하고 건조시켜 나노 입자가 포함된 고분자 박막을 형성한다. 그리고 나서 고분자 박막 상에 시트 형상의 그래핀 박막을 부착하여 전극을 형성한다. An electronic device and a method of manufacturing the same have been described which form a polymer thin film including nanoparticles and utilize graphene as an electrode to improve device performance. The electronic device according to the present invention includes an electrode formed by attaching a polymer thin film including nanoparticles and a sheet-like graphene thin film prepared by graphene deposition using a vapor phase carbon source on the polymer thin film. In the method of manufacturing an electronic device according to the present invention, a graphene thin film having a sheet shape is manufactured by graphene deposition using a gaseous carbon source, and a polymer solution in which nanoparticles are dispersed is prepared. Spin coating and drying a polymer solution in which the nanoparticles are dispersed on a device substrate to form a polymer thin film containing nanoparticles. Then, the sheet-like graphene thin film is attached to the polymer thin film to form an electrode.

Methods of using pre-formed nanotubes to make non-woven fabric and articles

미리 형성된 나노튜브를 사용하여 탄소 나노튜브 필름, 층, 직물, 리본, 소자 및 제품을 제조하는 방법이 개시되어 있다. 다양한 제품을 제조하기 위하여, 특정 실시태양에서는 기판(12)을 제공한다. 미리 형성된 나노튜브를 기판의 표면에 도포하여 탄소 나노튜브의 부직포를 생성한다. 소정 패턴에 따라 부직포(54)의 일부를 선택적으로 제거하여 제품을 생성한다. 나노직물을 제조하기 위하여, 기판을 제공한다. 미리 형성된 나노튜브를 기판의 표면에 도포하여 탄소 나노튜브의 부직포를 생성하는데, 이때 부직포는 실질적으로 균일한 밀도를 갖는다. Disclosed are methods for making carbon nanotube films, layers, fabrics, ribbons, devices and articles using preformed nanotubes. In order to manufacture various products, in certain embodiments, a substrate 12 is provided. The preformed nanotubes are applied to the surface of the substrate to produce a nonwoven fabric of carbon nanotubes. A portion of nonwoven fabric 54 is selectively removed according to a predetermined pattern to produce a product. In order to manufacture nanofabrics, a substrate is provided. The preformed nanotubes are applied to the surface of the substrate to produce a nonwoven fabric of carbon nanotubes, wherein the nonwoven fabric has a substantially uniform density. 나노튜브, 나노튜브 필름, 나노튜브 리본, 나노직물, 메모리 셀 Nanotubes, nanotube films, nanotube ribbons, nanofabrics, memory cells

DEVICE FOR DETECTING / STORING ELECTROMAGNETIC RADIATION, MANUFACTURING METHOD, USE OF THE DEVICE AND IMAGING THE INCORPORATING.

Carbon nanotube-based electronic devices made by electrolytic deposition and applications thereof

Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e.g., by application of bias voltage) in an amount sufficient to form the semiconducting device. The devices of the invention include, but not limited to, chemical or biological sensors, carbon nanotube field-effect transistors (CNFETs), tunnel junctions, Schottky junctions, and multi-dimensional nanotube arrays.

Photoactive component with organic layers

Photoaktives Bauelement mit organischen Schichten bestehend aus zumindest einer zwischen zwei Kontaktschichten angeordneten Folge von organischen Dünnschichten, die zumindest zwei dotierte Transportschichten und eine photoaktive Schicht umfasst und in einer pin-Dioden-Struktur aus einer i-, einer p-dotierten und einer n-dotierten Schicht angeordnet ist, wobei die Dotierung zu einer Erhöhung der Dichte freier Elektronen in der n-dotierten Schicht und zu einer Erhöhung der Dichte freier Löcher in der p-dotierten Schicht jeweils im thermischen Gleichgewichtszustand führt, wobei die Transportschichten eine größere optische Bandlücke aufweisen als die photoaktive Schicht und die pin-Dioden-Struktur zumindest in einem Teil des Sonnenspektrums von 350 nm bis 2000 nm teildurchlässig ist.

Flexible infrared irradiation and temperature sensors

A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

Morphology control of ultra-thin MeOx layer

A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

Optical sensor

An optical sensor (100) according to an aspect of the present invention is provided with: a substrate (10); a photoelectric conversion layer (20); a first electrode (11); and a second electrode (12). The photoelectric conversion layer (20) has a first surface (20a) facing the substrate, a second surface (20b) positioned on a side opposite to the first surface (20a), and at least one side surface, and is supported on the substrate (10). The first electrode (11) includes a first part (11a), and a second part (11b) which is separated from the first part (11a) and is closer to the second surface (20b) than the first part (11a), the first electrode being provided to the at least one side surface. The second electrode (12) is provided to the at least one side surface.

Single and few-layer graphene based photodetecting devices

Carbon nanotube-based electronic devices made by electronic deposition and applications thereof

Semiconductor device

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Polymer devices

Organic molecular memory

Polymer devices

An integrated circuit device comprising: a current drive switching element having an input electrode, an output electrode, a switchable region comprising a semiconductive polymer material electrically coupled between the input electrode and the output electrode, and a control electrode electrically coupled to the switchable region so as to allow the application of a bias to the control electrode to vary the flow of current through the switchable region between the input electrode and the output electrode; and a second circuit element, integrated with the switching element, and electrically coupled with the input electrode of the switching element for receiving a drive current from the switching element.

Waterproof copper-based perovskite solar cell and manufacturing method thereof

本发明公开了一种防水式铜基钙钛矿太阳能电池及其制备方法。电池从下至上由FTO导电玻璃、氧化钛致密层、氧化钛介孔层、甲胺卤化铜基钙钛矿吸光层、碳对电极和疏水防护层组成。其中，甲胺卤化铜基钙钛矿吸光层材料具有三维非层状钙钛矿晶体结构；疏水防护层采用具有疏水性质的聚四氟乙烯材料。本发明采用无毒的二价铜离子取代有毒铅离子制备出甲胺卤化铜作为吸光材料，具有合适的禁带宽度以及在可见光范围较好的光吸收；此外，以聚四氟乙烯作为疏水防护层可以大大提高器件的湿度稳定性。

Improvements in organic field-effect transistors

An organic field-effect transistor comprising: a source region; a drain region; one or more organic semiconductor layers disposed between the source and drain regions; a gate region; and a dielectric region disposed between the organic semiconductor layer(s) and the gate region; wherein the composition of the organic semiconductor layer(s) is such as to transport both electrons and holes, with the mobility of the holes being substantially equal to the mobility of the electrons such that the transistor substantially exhibits ambipolarity in its transfer characteristics. The organic field-effect transistor is preferably a light-sensing organic field-effect transistor. Numerous modifications to the composition and structure of organic field-effect transistors are also disclosed, as are examples of electro-optical switches, electro-optical logic circuits and image sensing arrays.

A kind of organic heterojunction photosensitive field-effect transistor of temp control switch and preparation method thereof

本发明提供的一种温度控制开关的有机异质结光敏场效应晶体管及其制备方法及其制备方法，改善了现有的有机场效应晶体管输出电流小的问题，并使其具有温度控制开关的功能，其结构如图1所示，包括衬底(1)、开关电极(2)、栅电极(3)、绝缘层(4)、光敏有机半导体层(5)、电子传输层(6)、第一缓冲层(701)、第二缓冲层(702)、源电极(801)、漏电极(802)、第一封装层(9)、第二封装层(10)。

Semiconductor device

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a first element forming layer (501a); a second element forming layer (502a); a layer containing a conductive particle (305), configured to adhere the first element forming layer and the second element forming layer; and a conductive layer (525) which functions as an antenna included in the first element forming layer or the second element forming layer, wherein the first element forming layer includes a first transistor (111,113) provided over an insulating layer, and a first conductive layer (124a,124c) which functions as a source wiring or a drain wiring of the first transistor; wherein the second element forming layer includes a memory element (454) comprising a third conductive layer (451), an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order; and wherein the first conductive layer (124a,124b) which functions as the source wiring or the drain wiring of the first transistor is electrically connected to the third conductive layer (451) or the conductive layer (525) which functions as the antenna through the conductive particle.

High-performance quantum dot point Intermediate Gray graphene schottky junction solar cell and preparation

本发明属于太阳能电池的技术领域，公开了高性能量子点中间带石墨烯肖特基结太阳电池及制备。所述石墨烯肖特基结太阳电池从下到上依次包括底电极、GaAs衬底、表面重构的GaAs层、GaAs缓冲层、量子点中间带、石墨烯层、顶电极；所述量子点中间带由GaAs盖层和InAs量子点层交替叠加而成，GaAs缓冲层上为InAs量子点层，GaAs盖层和InAs量子点层的层数相同。本发明在石墨烯肖特基结太阳电池中引入量子点中间带，有效拓宽了电池对太阳光谱的吸收范围，显著增大了光生电流，实现了太阳能电池高的光电转换效率。

Method of using pre-formed nanotubes to make carbon nanotube films, layers, ribbons, elements and articles

Methods of using performed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. To make various articles, certain embodiments provide a substrate (12). Performed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric (54) are selectively removed according to a defined pattern to create the article. To make a nonfabxic, a substrate is provide. Prefromed nanotubea are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density.

Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same

Provided is a micro-pattern forming method according to one aspect of the present invention. The micro-pattern forming method comprises the steps of: forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross-section on a substrate; forming a material layer on the entire surface of the substrate, on which the organic wire or organic-inorganic hybrid wire mask pattern has been formed; and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate so as to leave only the parts of the material layer on which the organic wire or organic-inorganic hybrid wire mask pattern was not formed.

Organic solar batteries and its manufacture method

本发明涉及一种有机太阳能电池和其制造方法。该方法包括使用纳米压印工艺在光活性层上形成纳米图案，以及在具有纳米图案的光活性层上涂布阴极电极材料，使得阴极电极材料渗入光活性层的纳米图案，从而提高电子导电率并且有效地形成输送电子的通路。该方法可减少由于电子受体材料聚集而造成的光电流损失并且在纳米压印工艺中电子供体的分子取向得以改善，从而可以提高电池效率。此外，可以通过简单的制造工艺低成本地制造高效率的有机太阳能电池。因此，该方法可用于制造使用环境友好和可再生能源的有机太阳能电池。

Photoelectric conversion element and solid state imaging device

Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes (a-1) a first electrode 21 and a second electrode 22 which are disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 that is disposed between the first electrode 21 and the second electrode 22, wherein the photoelectric conversion material layer 30 is formed of a dioxaanthanthrene-based compound represented by the following structural formula (1).

Organic photovoltaic cells utilizing ultrathin sensitizing layer

본 발명의 감광 소자는 도너 호스트 물질의 제1 연속층, 억셉터 호스트 물질의 제2 연속층, 및 제1 연속층 및 제2 연속층 사이에 다수의 불연속 아일랜드로서 배치되는 1 이상의 다른 유기 광전도성 물질을 포함하는, 제1 전극과 제2 전극 사이에 스택으로 배치된 다수의 유기 광전도성 물질을 포함한다. 이들 다른 광전도성 물질 각각은 도너 호스트 물질 및 억셉터 호스트 물질과는 상이한 흡수 스펙트럼을 갖는다. 바람직하게는, 불연속 아일랜드 각각은 실질적으로 각각의 유기 광전도성 물질의 미세 결정으로 구성되어 있고, 더욱 바람직하게는, 미세 결정은 나노 결정이다.

Solar antenna array fabrication

A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.

Method and apparatus for infrared detection and display

本发明实施例涉及用于红外检测的方法和设备。可以利用有机层形成用于检测IR辐射的光电晶体管。IR检测器的波长范围可以通过包含对不同波长的光子敏感的材料而调节。可以在吸收层中包含这样的材料的量子点，所述材料对具有与光电晶体管的吸收层的基质有机材料不同波长的光子敏感，从而增强具有与量子点的材料相关的波长的光子的吸收。可以使用光电导体结构替代光电晶体管。所述光电导体可以包含PbSe或PbS量子点。光电导体可以包含有机材料和OLED结构的部分。检测的IR图像可以显示给用户。有机材料可以被用于形成有机发光器件。

High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions

A device is provided, having a first electrode, a second electrode, and a photoactive region disposed between the first electrode and the second electrode. The photoactive region includes a first photoactive organic layer that is a mixture of an organic acceptor material and an organic donor material, wherein the first photoactive organic layer has a thickness not greater than 0.8 characteristic charge transport lengths; a second photoactive organic layer in direct contact with the first organic layer, wherein the second photoactive organic layer is an unmixed layer of the organic acceptor material of the first photoactive organic layer, and the second photoactive organic layer has a thickness not less than about 0.1 optical absorption lengths; and a third photoactive organic layer disposed between the first electrode and the second electrode and in direct contact with the first photoactive organic layer. The third photoactive organic layer is an unmixed layer of the organic donor layer of the first photoactive organic layer and has a thickness not less than about 0.1 optical absorption lengths.

Organic heterojunction photosensitive field-effect transistor with temperature control switch and preparation method of organic heterojunction photosensitive field-effect transistor

本发明提供的一种温度控制开关的有机异质结光敏场效应晶体管及其制备方法及其制备方法，改善了现有的有机场效应晶体管输出电流小的问题，并使其具有温度控制开关的功能，其结构如图1所示，包括衬底(1)、开关电极(2)、栅电极(3)、绝缘层(4)、光敏有机半导体层(5)、电子传输层(6)、第一缓冲层(701)、第二缓冲层(702)、源电极(801)、漏电极(802)、第一封装层(9)、第二封装层(10)。

Material for photoelectric conversion devices, and display device

The present invention provides a novel material for photoelectric conversion devices, the material exhibiting excellent convenience, usefulness or reliability. The present invention provides a material for photoelectric conversion devices, the material being used for a second layer of a photoelectric conversion device which comprises a first electrode, a second electrode, a first layer, the second layer and a third layer, wherein: the first layer is sandwiched between the first electrode and the second electrode; the second layer is sandwiched between the second electrode and the first layer; the third layer is sandwiched between the second electrode and the second layer; and the third layer has high electron mobility in comparison to the first layer. This material for photoelectric conversion devices has an anthracene skeleton; and the anthracene skeleton is bonded with a diarylamino group, a dihetero arylamino group or an aryl hetero arylamino group.

Display device and manufacturing method thereof

A display device includes a plurality of islands and a bridge connecting the plurality of islands to each other. Each of the plurality of islands includes a flexible substrate, a thin film transistor positioned on a first surface of the flexible substrate, a first electrode connected to the thin film transistor, and a protective mask positioned on a second surface of the flexible substrate.

A working electrode for a photovoltaic device, and a photovoltaic device including the working electrode

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3). The light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules bonded to each other so that they form a plurality of clusters (7) of dye molecules. The present invention also relates to a photovoltaic device including the working electrode.

Method of improving exciton dissociation at organic donor-acceptor heterojunctions

The present disclosure generally relates to organic photosensitive optoelectronic devices and polaron pair recombination dynamics to impact efficiency and open circuit voltages of organic solar cells. The present disclosure also relates, in part, to methods of making organic photosensitive optoelectronic devices comprising the same.

Photoelectric conversion element and solid-state imaging device

本申请涉及光电转换元件和固体摄像装置。其中，所述光电转换元件包含：彼此分开设置的第一电极和第二电极；以及设置在所述第一电极和所述第二电极间的光电转换区。所述光电转换区包括多个层，所述多个层中的至少一个层由结构式(1)或结构式(2)所示的基于二氧杂蒽嵌蒽的化合物形成。但结构式(1)中的R 3 和R 9 中的至少一个为除氢以外的取代基，并且结构式(2)中的R 1 -R 11 中的至少一个为除氢以外的取代基。

Photoelectric transistor and preparation method thereof

本发明公开一种光电晶体管及其制备方法，其中，所述制备方法包括步骤：将石墨烯转移至绝缘衬底上；在所述石墨烯上制备预定图形的金属电极，制得石墨烯晶体管；将生物光敏分子嫁接在所述石墨烯晶体管上，制得所述光电晶体管。所述石墨烯作为光电晶体管的沟道层，生物光敏分子作为光吸收层，通过生物光敏分子的吸收峰波长对应的光诱导光吸收层，形成光控门，实现对光电晶体管中电荷状态的调控；同时可与背栅电压结合，实现不同的电荷存储状态调控，存储于光吸收层的电荷受能带势垒的影响，稳定的存在于光吸收层。由于生物光敏分子的光电转换效率高，可显著提高一般石墨烯光电晶体管的量子转换效率。

Cytochrome c552 color imaging element and method of manufacturing the same, cytochrome c552 photosensor and method of manufacturing the same, cytochrome c552 photoelectric transducer and method of manufacturing the same, and cytochrome c552 electronic device

A color imaging element, a photosensor and a photoelectric transducer which use a protein and are capable of being stably used for a long time, and methods of manufacturing them are provided. A zinc-substituted cytochrome c552 is immobilized on a gold electrode with a self-assembled monolayer in between to form a blue-light photoelectric transducer. Alternatively, a cytochrome c552 is immobilized on a gold electrode with a self-assembled monolayer in between, and a fluorescent protein absorbing blue light is bonded to the cytochrome c552, thereby forming a blue-light photoelectric transducer. These photoelectric transducers each are used as a color imaging element or a blue-light photoelectric transducer of a photosensor.

Conductive synthetic peptides for molecular electronics

In various embodiments, a synthetic peptide finding use as a molecular wire in a molecular electronic circuit comprises an alpha helical segment further comprising repeating alpha-helical motifs. The synthetic peptide may further comprise at least one specific conjugation site between the termini for attachment to a 5 molecule such as a binding probe, and may further comprise termini having metal binding functionality such as repeats of material binding sequences. In various aspects, the synthetic peptide comprises intramolecular hydrogen bonding, salt bridges, and optionally, aromatic rings that provide for electrical conductivity through the peptide.

Perovskite structure, electronic device using same, and method for manufacturing related photoelectric conversion layer

一种钙钛矿结构，设置于一基板。钙钛矿结构包括多个晶粒。多个晶粒实质上具有介于3微米与5微米的范围内的尺寸。晶粒的材料为ABX 3 ，其中A包括铯、甲胺、甲脒的其中至少一者，B包括铅、锡、和锗的其中至少一者，X包括氯、溴、和碘的其中至少一者。

AN ELECTRO-OPTICAL COMPONENT WITH NANOTUBES, INTEGRATED OPTRONIC OR OPTICAL LINKED INTEGRATED CIRCUIT INCORPORATING THIS COMPONENT, AND METHOD OF MANUFACTURING THE SAME.

La présente invention concerne un composant photonique pour la nanophotonique et de l'optoélectronique. Ce composant comprend un guide linéaire d'onde optique dont une portion active est entourée sur tout ou partie de sa périphérie par un groupement d'un ou plusieurs nanotubes essentiellement semiconducteurs. Ces nanotubes interagissent avec leur environnement extérieur dans une zone active s'étendant de part et d'autre du guide d'onde optique, pour induire ainsi un couplage optique entre un signal électrique ou optique appliqué aux nanotubes et d'autre part un signal optique dans la portion active du guide d'onde. Un tel composant peut réaliser en particulier des fonctions électro-optiques bipolaires de source lumineuse, ou modulateur ou détecteur, à l'intérieur du guide optique. Elle concerne en outre un circuit intégré hybride électronique et optique dont des circuits optiques et électroniques interagissent entre eux à travers au moins un tel composant électro-optique ; ainsi qu'un procédé de fabrication d'un tel composant ou circuit intégré.

Photosensitive organic thin-film transistor based on Schottky contact and manufacturing method thereof

本发明公布了一种基于肖特基接触的光敏有机薄膜晶体管及其制备方法，包括衬底、栅电极、栅极绝缘层、具有光探测功能的有机层、源电极、漏电极，有机层与源电极、漏电极形成肖特基接触，界面具很高的接触势垒，器件在无光照时即使存在栅压和漏极电压，仍能保持关断，但是在外界光源的照射下，有机层处产生的激子在栅电场作用下，解离成电子和空穴，电子在源电极、漏电极处聚集，降低了有机层和源电极、漏电极的接触势垒，在漏极电压下形成沟道电流。本发明由于在无光照时器件保持关断，故能获得高灵敏度的光响应，并且结构简单，且能获得高的光灵敏度。

A kind of display module

本发明公开了一种显示模组，通过在第二电极与第一透明基板之间的非显示区域中设置太阳能电池层，太阳能电池层可以吸收一部分外界的光线并产生电流，进而通过可充电电池将太阳能电池层产生的电能储存起来，从而极大的增加可充电电池的续航能力，相当于降低了显示模组的能耗。