Method of preparing gas and gaseous precursor-filled microspheres

Methods of and apparatus for preparing temperature activated gaseous precursor-filled liposomes are described. Gaseous precursor-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Silicon amphiphilic compounds and the use thereof

Novel silicon amphiphilic compounds which comprise a silicon residue. The silicon amphiphilic compounds are particularly suitable for use in compositions for diagnostic imaging, such as ultrasound. Compositions of the silicon amphiphilic compounds comprise a gas or gaseous precursor, and may take the form of vesicle compositions, such as micelles or liposomes.

Hybrid magnetic resonance contrast agents

Methods of preparing gas and gaseous precursor-filled microspheres

Methods of preparing gas-filled liposomes

Novel therapeutic delivery systems

Novel targeted compositions for diagnostic and therapeutic use

Novel targeted compositions which may be used for diagnostic and therapeutic use. The compositions may comprise a lipid, a protein or a polymer and a gas, in combination with a targeting ligand. The targeting ligand targets tissues, cells or receptors, including myocardial cells, endothelial cells, epithelial cells, tumour cells and the glycoprotein GPIIbIIIa receptor. The contrast media can be used in conjunction with diagnostic imaging, such as ultrasound, as well as therapeutic applications, such as therapeutic ultrasound.

Novel therapeutic delivery systems

Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled lipid microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic delivery applications are also provided. Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled liposomes having a drug encapsulated therein are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in therapeutic delivery applications are also disclosed.

Methods of preparing gaseous precursor-filled microspheres

Methods of and apparatus for preparing gas-filled microspheres are described. Gas-filled microspheres prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Gas filled liposomes and their use as ultrasonic contrast agents

Contrast agents for ultrasonic imaging comprising gas filled liposomes prepared using vacuum drying gas instillation methods, and gas filled liposomes substantially devoid of liquid in the interior thereof, are described. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in ultrasonic imaging applications are also disclosed. Also described are diagnostic kits for ultrasonic imaging which include the subject contrast agents.

Novel therapeutic delivery systems

Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled lipid microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic delivery applications are also provided. Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled liposomes having a drug encapsulated therein are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in therapeutic delivery applications are also disclosed.

Therapeutic delivery systems

Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled lipid microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic delivery applications are also provided. Targeted therapeutic delivery systems comprising gas- or gaseous precursor-filled liposomes having a drug encapsulated therein are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in therapeutic delivery applications are also disclosed.

Methods of preparing gaseous precursor-filled microspheres

Methods of and apparatus for preparing gas-filled microspheres are described. Gas-filled microspheres prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Therapeutic delivery systems

Therapeutic delivery systems comprising gaseous precursor-filled microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic delivery applications are also provided. Therapeutic delivery systems comprising gaseous precursor-filled liposomes having encapsulated therein a contrast agent or drug are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in therapeutic delivery applications are also disclosed.

Non-volatile memory and manufacturing method thereof

A non-volatile memory and a manufacturing method thereof are provided. The non-volatile memory includes a substrate, a gate structure, a first doped region, a second doped region and a pair of isolation structures. The gate structure is disposed on the substrate. The gate structure includes a charge storage structure, a gate and spacers. The charge storage structure is disposed on the substrate. The gate is disposed on the charge storage structure. The spacers are disposed on the sidewalls of the gate and the charge storage structure. The first doped region and the second doped region are respectively disposed in the substrate at two sides of the charge storage structure and at least located under the spacers. The isolation structures are respectively disposed in the substrate at two sides of the gate structure.

Non-volatile memory and manufacturing method thereof and operating method of memory cell

A non-volatile memory and a manufacturing method thereof and a method for operating a memory cell are provided. The non-volatile memory includes a substrate, first and second doped regions, a charged-trapping structure, first and second gates and an inter-gate insulation layer. The first and second doped regions are disposed in the substrate and extend along a first direction. The first and second doped regions are arranged alternately. The charged-trapping structure is disposed on the substrate. The first and second gates are disposed on the charged-trapping structure. Each first gate is located above one of the first doped regions. The second gates extend along a second direction and are located above the second doped regions. The inter-gate insulation layer is disposed between the first gates and the second gates. Adjacent first and second doped regions and the first gate, the second gate and the charged-trapping structure therebetween define a memory cell.

Housing of electronic device and method for making the same

Housing of electronic device includes a metal base, a ceramic layer forming on the metal base, and at least one pattern formed on the surface of the ceramic layer. The disclosure also described a method to make the housing.

STAINLESS STEEL ARTICLE AND METHOD FOR MAKING SAME

A stainless steel article is provided. The stainless steel article includes a stainless steel substrate, and a pattern formed on an outer surface of the substrate. The pattern is defined by at least one recess formed on the outer surface. The pattern has a surface roughness of about 50 nm-150 nm. A method for making the present article is also provided. 1. A stainless steel article , comprising:a stainless steel substrate, the substrate having an outer surface; anda pattern formed on the substrate, the pattern being defined by at least one recess formed on the outer surface, the pattern having a surface roughness of about 50 nm-150 nm.2. The stainless steel article as claimed in claim 1 , the stainless steel article further comprising non-pattern areas claim 1 , the non-pattern areas being portions of the outer surface besides the pattern.3. The stainless steel article as claimed in claim 2 , wherein the non-pattern areas have a sandblasted surface.4. The stainless steel article as claimed in claim 2 , wherein the non-pattern areas have a hairline finished surface.5. The stainless steel article as claimed in claim 1 , wherein the depth of the at least one recess is about 0.08 mm-0.10 mm.6. A method for making a stainless steel article claim 1 , comprising the steps of:providing a stainless steel substrate, the substrate having an outer surface;forming a pattern on the outer surface by laser etching or chemical etching, the pattern defined by al least one recess, the pattern having a surface roughness of about 300 nm-400 nm;electrolyte-plasma polishing the substrate, thereby the pattern achieving a surface roughness of about 50 nm-150 nm.7. The method as claimed in claim 6 , wherein the laser etching process is carried out under the following parameters: an etching power of about 4 W-6 W claim 6 , a scanning rate of about 800 mm/s-1200 mm/s claim 6 , an etching interval no larger than 0.02 mm claim 6 , and an etching depth of about 0.02 mm-0.03 mm.8. The method as ...

DEVICE HOUSING AND METHOD FOR MAKING SAME

A device housing for an electronic device is provided. The device housing includes a metal main body and at least one metal decorative member. The metal main body has at least one receiving recess defined in an outer surface thereof. The at least one metal decorative member has a top surface. The top surface has a mirror finish. The at least one metal decorative member is received in the at least one receiving recess, with the top surface exposed out of the outer surface. The at least one metal decorative member forms a desired symbol, logo, or pattern on the device housing. 1. A device housing , comprising:a main body made of metal, the main body having an outer surface and an opposite inner surface, the outer surface having at least one receiving recess defined therein; andat least one decorative member made of metal, the least one decorative member having a top surface and an opposite bottom surface, the top surface having a mirror finish, the at least one decorative member received in the at least one receiving recess, with the top surface exposed out of the outer surface.2. The device housing as claimed in claim 1 , wherein the outer surface is defined by a colored anodized oxide layer having a sandblasted pattern or a brushed texture of fine lines.3. The device housing as claimed in claim 1 , wherein the main body is selected from a group consisting of aluminum claim 1 , aluminum alloy claim 1 , magnesium alloy claim 1 , titanium claim 1 , and titanium alloy.4. The device housing as claimed in claim 1 , wherein the at least one decorative member is made of stainless steel.5. The device housing as claimed in claim 1 , wherein the at least one decorative member is secured within the at least one receiving recess by an adhesive layer located between the at least one decorative member and the main body.6. The device housing as claimed in claim 1 , wherein the adhesive layer is a heat-sensitive adhesive layer.7. The device housing as claimed in claim 1 , wherein ...

Ceramic article and method for making same, and electronic device using same

A display window is formed by mechanically processing a transparent ceramic article. The composition of the ceramic article includes yttrium oxide and thorium oxide, the mole percentage of yttrium oxide is about 85% to about 94.99%, and the mole percentage of thorium oxide is about 4.99% to about 15%. The display window has a high light transmittance, good acid and alkali corrosion resistance, high hardness, long lifetime.

DEVICE HOUSING AND METHOD FOR MAKING THE DEVICE HOUSING

A device housing includes a stainless steel substrate having a first metallic coating and a second metallic coating formed thereon and in that order. The stainless steel substrate has at least one recess defined in an outer surface. The first metallic coating and a second metallic coating have different colors. The first metallic coating is left exposed in the recesses but covered elsewhere by the second metallic coating to form a desired symbol, logo, or pattern on the device housing. A method for making the present device housing also is provided. 1. A device housing , comprising:a stainless steel substrate having at least one recess defined in an outer surface;a first metallic coating having a firs portion and a second portion connecting the first portion, the first portion formed in the recesses, the second portion formed on the outer surface; anda second metallic coating applied only to the second portion, the second metallic coating and first metallic coating having different colors from each other.2. The device housing as claimed in claim 1 , wherein the outer surface has a sandblasted pattern or a brushed texture of fine lines achieved by a sandblasting process or a hairline finishing process claim 1 , the second metallic coating thereby has a surface profile corresponding to the outer surface claim 1 , having a sandblasted pattern or a brushed texture of very fine lines.3. The device housing as claimed in claim 1 , wherein each of the at least one recess has a bottom wall smoother than the outer surface.4. The device housing as claimed in claim 1 , wherein the first metallic coating and the second metallic coating both are made of one or more selected from the group consisting of oxide of metal claim 1 , nitride of metal claim 1 , carbide of metal claim 1 , carbonitride of metal claim 1 , and oxynitride of metal claim 1 , which is formed by physical vapor deposition.5. The device housing as claimed in claim 1 , wherein the first metallic coating has a ...

HOUSING AND PORTABLE ELECTRONIC DEVICE USING SAME

A housing for a portable electronic device is transparent and U-shaped. The housing includes a first section, a second section opposite to the first section, and a connection portion connecting the first section to the second section. 1. A housing for a portable electronic device , the housing being transparent , comprising:a first section;a second section opposite to the first section; anda connection portion connecting the first section to the second section to make the housing U-shaped.2. The housing as claimed in claim 1 , wherein the first and the second section are plate-shaped.3. The housing as claimed in claim 1 , wherein the connection portion comprises a plate-shaped main body and two arc-shaped extension portions extending from opposite ends of the main body.4. The housing as claimed in claim 1 , wherein the connection portion is a display window.5. The housing as claimed in claim 1 , wherein a through hole is defined in the second section claim 1 , and the through hole is used to receive a camera.6. The housing as claimed in claim 1 , wherein the first section is a display window.7. The housing as claimed in claim 1 , wherein the second section is a display window.8. A portable electronic device claim 1 , comprising:a housing and an electronic chip received in the housing,wherein the housing is transparent and U-shaped, the housing comprises a first section, a second section opposite to the first section; and a connection portion connecting the first section to the second section.9. The portable electronic device as claimed in claim 8 , wherein the first and the second section are plate-shaped.10. The portable electronic device as claimed in claim 8 , wherein the connection portion comprises a plate-shaped main body and two arc-shaped extension portions extending from opposite ends of the main body.11. The portable electronic device as claimed in claim 8 , wherein the connection portion is a display window.12. The portable electronic device as claimed in ...

DEVICE HOUSING AND METHOD FOR MAKING THE DEVICE HOUSING

A device housing for an electronic device is provided. The device housing includes a stainless steel substrate and at least one metal decorative member. The stainless steel substrate has at least one receiving recess defined in an outer surface and has a metallic coating formed on the outer surface. The at least one metal decorative member has a top surface. The top surface has a mirror finish. The at least one metal decorative member is received in the at least one receiving recess, with the top surface exposed out of the outer surface. The at least one metal decorative member forms a desired symbol, logo, or pattern on the device housing. 1. A device housing , comprising:a stainless steel substrate having an outer surface and an inner surface opposite to the outer surface, the outer surface defining at least one receiving recess and having a metallic coating formed, on regions of the outer surface adjacent the at least one receiving recess, the outer surface having a texture comprising fine lines, the metallic coating thereby having a surface profile corresponding to the outer surface; andat least one metal decorative member, each of the at least one decorative member having a top surface and an opposite bottom surface, the top surface having a higher gloss than the outer surface, the at least one decorative member received in the corresponding at least one receiving recess, with the top surface visible by an observer.2. (canceled)3. The device housing as claimed in claim 1 , wherein the metallic coating has a color different from that of the at least one decorative member.4. The device housing as claimed in claim 1 , wherein the metallic coating is made of one or more selected from the group consisting of oxide of metal claim 1 , nitride of metal claim 1 , carbide of metal claim 1 , carbonitride of metal claim 1 , and oxynitride of metal claim 1 , which is formed by physical vapor deposition.5. The device housing as claimed in claim 1 , wherein the at least one ...

Housing and method for making same

A housing includes a metal substrate having an outer surface and a color layer formed on the outer surface. The outer surface has a gradient surface roughness across at least one dimension of the outer surface. The color layer has a surface appearance corresponding with the outer surface, thereby the brightness of color of the color layer gradually changing with the location on the outer surface. A method for making the housing is also provided.

METHOD FOR FABRICATING DEVICE HOUSING HAVING CERAMIC COATING

A method for making a housing of an electronic device includes applying a layer of ceramic powder material to an outer surface of a metal substrate. The layer of ceramic powder material and a top layer of the metal substrate are melted by laser irradiation, forming a ceramic-metal composite coating integrally bonding with the metal substrate when cooled. The substrate with the ceramic-metal composite coating is heated to a peak temperature, maintained at the peak temperature for a desired period of time, and then cooled down to room temperature. The heat treated metal substrate with the ceramic-metal composite coating is then formed into a desired shape. 1. A method for making a device housing having a ceramic coating , comprising:providing a metal substrate;applying a layer of ceramic powder material to an outer surface of the metal substrate;melting the layer of ceramic powder material and a top layer of the metal substrate by laser irradiation, thereby forming a ceramic-metal composite coating integrally bonding with the metal substrate;applying a heat treatment by heating the metal substrate with the ceramic-metal composite coating to a peak temperature and maintaining the metal substrate with the ceramic-metal composite coating at the peak temperature for a period of time;cooling the metal substrate with the ceramic-metal composite coating from the peak temperature to room temperature; andforming the metal substrate with the ceramic-metal composite coating into a desired shape.2. The method as claimed in claim 1 , wherein the metal substrate is made of stainless steel or aluminum alloy.3. The method as claimed in claim 1 , wherein the layer of ceramic powder material is applied by electrostatic powder spraying.4. The method as claimed in claim 1 , wherein the layer of ceramic powder material is oxide ceramic.5. The method as claimed in claim 4 , wherein the layer of ceramic powder material is selected from the group consisting of vanadium oxide claim 4 , ...

Device housing and method for making the same

A device housing includes a main body and a first decorative layer formed on the main body. The main body defines a planar region and at least a concave region connected with the planar region. The first decorative layer includes a first pattern and a second pattern. The first pattern is formed on the planar region. The second pattern is formed on the concave region. The first pattern and the second pattern are an integral structure. A method for making the device housing is also provided.

Device housing and method for making the same

A device housing includes a substrate and a decorative article formed in the substrate. The substrate defines a cutout therein and the decorative article is received in the cutout and bonded with the substrate. The decorative article is a glass article which is formed in the cutout by molding softened glass material into the cutout. A method for making the device housing is also provided.

HOUSING AND METHOD FOR MAKING SAME

A housing is made of colored glaze, and the colored glaze is a kind of glass comprising lead dioxide. The housing comprises fibers embedded therein. The housing is strengthened by introducing fibers into the housing. The fibers can also form a pattern and improve the appearance of the housing. 1. A housing , the housing being made of colored glaze , wherein the colored glaze is glass comprising lead dioxide , the housing has fibers embedded therein.2. The housing as claimed in claim 1 , wherein the lead dioxide has a mass percentage of about 10% to about 20% in the colored glaze.3. The housing as claimed in claim 1 , wherein transmittance of light through the housing is about 70% to about 90%.4. The housing as claimed in claim 1 , wherein the fiber is glass fiber claim 1 , carbon fiber or boron fiber.5. The housing as claimed in claim 1 , wherein the fibers form a pattern.6. A method for making a housing claim 1 , comprising:injection molding colored glaze comprising lead dioxide to form a substrate;locating woven fibers on a surface of the substrate when the substrate is not fully solidified, and pressing together the fibers and the substrate to combine them together to form an integral body; andforming a surface layer on the surface of the substrate integrated with the fibers by injection molding colored glaze on the surface of the substrate.8. The method as claimed in claim 6 , wherein the fiber is glass fiber claim 6 , carbon fiber or boron fiber.10. The method as claimed in claim 6 , wherein the method further includes trimming and polishing the housing.11. The method as claimed in claim 6 , wherein the colored glaze is glass comprising lead dioxide.12. The method as claimed in claim 11 , wherein the lead dioxide has a mass percentage of about 10% to about 20% in the colored glaze. 1. Technical FieldThe present disclosure relates to housings and method for making the housings, especially to a housing made of colored glaze and method for making the housing.2. ...

METHOD FOR STRENGTHENING HOUSING AND HOUSING MADE BY SAME

A method for strengthening a housing comprises the following steps: providing a housing being made of colored glaze and having an initial temperature of about 480° C. to about 550° C.; and spraying the surface of the housing using a spray solution containing potassium nitrate, potassium silicate, diatomite, and water to create an exterior layer on the surface. The exterior layer contains Kions, and the concentration of the Kions gradually decreases from a maximum value in the area of the outside surface of the exterior layer to zero in the area of the inside of the housing. 1. A method for strengthening a housing , comprising:forming a housing being made of colored glaze and having an initial temperature of about 480° C. to about 550° C.; andspraying the housing surface using a spray solution containing potassium nitrate, potassium silicate, diatomite, and water to create an exterior layer on the outer housing surface, the exterior layer containing potassium ions, whereby the concentration of the potassium ions gradually decreases from a maximum value in the area of the outside surface of the exterior layer to zero in the area of the inside of the housing.2. The method as claimed in claim 1 , wherein mass percentage of the potassium nitrate in the spray solution is about 37.5% to about 42.5%.3. The method as claimed in claim 1 , wherein mass percentage of the potassium silicate in the spray solution is about 7.5% to about 10%.4. The method as claimed in claim 1 , wherein mass percentage of the diatomite in the spray solution is about 2.5%.5. The method as claimed in claim 1 , further comprising forming the housing by injection molding.6. The method as claimed in claim 5 , forming the housing further comprises:heating and melting colored glaze blocks at a temperature of about 600° C. to about 800° C.;injection molding the molten colored glaze into a mold; andsolidifying the molten colored glaze to form a housing having a desired shape.7. The method as claimed in ...

FILM, METHOD FOR MANUFACTURING THE FILM AND MASKING METHOD USING THE FILM

A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided. 1. A film , comprising:a base; anda photosensitive layer formed on the base, the photosensitive layer substantially comprising a first photosensitive agent, a second photosensitive agent, and a thermosol, the first photosensitive agent being water-soluble, the second photosensitive agent is an aromatic ketone compound or benzoin ether compound.2. The film as claimed in claim 1 , wherein the mass percentage of the first photosensitive agent in the photosensitive layer is about 80% to about 90%.3. The film as claimed in claim 1 , wherein the mass percentage of the second photosensitive agent in the photosensitive layer is about 5% to about 10%.4. The film as claimed in claim 1 , wherein the mass percentage of the thermosol in the photosensitive layer is about 5% to about 10%.5. The film as claimed in claim 1 , wherein the first photosensitive agent is ammonium bichromate.6. The film as claimed in claim 1 , wherein the thickness of the photosensitive layer is about 30 μm to about 50 μm.7. The film as claimed in claim 1 , wherein the aromatic ketone compound is benzophenone claim 1 , halogenobenzophenone or 4-vinyl lenzyl-4′-methoxybenzophenone.8. The film as claimed in claim 1 , wherein the benzoin ether compound is 2 claim 1 ,2-dimethoxy-2-phenylacetophenone claim 1 , benzoin butyl ether claim 1 , or benzoin ethyl ether.9. The film as claimed in claim 1 , wherein the thermosol is water-soluble.10. A method for manufacturing a film claim 1 , comprising:providing a base;providing a first photosensitive agent, a second photosensitive agent, and a ...

ELECTRONIC DEVICE AND METHOD FOR REDIALING OF ELECTRONIC DEVICE

An electronic device has a function of redialing a telephone number. If a call of the telephone number hangs up, the electronic device detects if the telephone number satisfies a redial condition. If the telephone number is under the redial condition, the telephone number is redialed automatically. If a number of times of the redialing is more than the redial times, the electronic device stops the redialing. 1. An electronic device , comprising:a storage system;at least one processor; andone or more programs stored in the storage system and executed by the at least one processor, the one or more programs comprising:a setting module that sets redial parameters of a selected telephone number, wherein the redial parameters include redial conditions, a time interval, and a remind mode;a redialing module that redials the telephone number according to the time interval when a call of the telephone number satisfies a condition of the redial conditions; anda prompting module that prompts a user that the telephone number is being redialed by using the remind mode.2. The electronic device as described in claim 1 , wherein the one or more programs further comprises:an obtaining module that obtains all telephone numbers from a phone book and a call log of the electronic device; anda selecting module that deletes repetitive telephone numbers.3. The electronic device as described in claim 1 , wherein the redialing conditions comprises a phone number that the user called and was unanswered claim 1 , a phone number that the user calls is busy claim 1 , and a phone number that the user calls is not in server.4. The electronic device as described in claim 1 , wherein the redial parameters further comprises redial times.5. The electronic device as described in claim 1 , wherein the prompting module further increases the number of times that the telephone number is redialed by one.6. The electronic device as described in claim 5 , wherein the one or more programs further comprise a ...

DEVICE HOUSING AND METHOD FOR MANUFACTURING SAME

A device housing for electronic device includes a substrate comprising activated carbon particles and adhesive material for bonding and rigidifying the activated carbon particles; and a decorative coating directly formed on a surface of the substrate. A method for manufacturing the device housing is also described. 1. A device housing , comprising:a substrate comprising activated carbon particles and adhesive material for bonding and rigidifying the activated carbon particles; anda decorative coating directly formed on a surface of the substrate.2. The device housing as claimed in claim 1 , wherein the adhesive material is a polyacrylate adhesive.3. The device housing as claimed in claim 2 , wherein adhesive material is water-resistant.4. The device housing as claimed in claim 1 , wherein within the substrate claim 1 , the activated carbon particles have a mass percentage of about 94%-98%;the adhesive material has a mass percentage of about 1%-6%.5. The device housing as claimed in claim 4 , wherein within the substrate claim 4 , the activated carbon particles have a mass percentage of about 94%; the adhesive material has a mass percentage of about 5%.6. The device housing as claimed in claim 1 , wherein the activated carbon particles have an average size of about 70 μm to about 80 μm.7. The device housing as claimed in claim 1 , wherein the substrate has a surface porosity greater than about 35%.8. The device housing as claimed in claim 1 , wherein the decorative coating is a paint layer containing dyes or pigments.9. The device housing as claimed in claim 8 , wherein the decorative coating has an air permeability coefficient greater than about 80%.10. A method for manufacturing a device housing claim 8 , comprising:blending activated carbon particles and an adhesive material to form a paste mixture;dry-pressing the paste mixture to form a solidified plate;treating the plate by a first steam activation process;forming a substrate having a desired device housing ...

Glass article and method for making same

A glass article includes a main body made from glass and at least one decorative member. The main body has a three-dimensional shape and has an outer surface which has at least one curved surface portion. The at least one curved surface portion defines at least one recess. The at least one decorative member are received in the corresponding at least one recess to form a desired symbol, logo, or pattern on the glass article. A method for making the glass article is also provided.

COATED ARTICLE AND METHOD FOR MANUFACTURING THE SAME

A coated article includes a metal substrate, and an enamel composite layer formed on the metal substrate. The enamel composite layer mainly includes silicon oxide, aluminium oxide, sodium oxide, potassium oxide, and fiber reinforced materials. A method for making the coated articles is also provided. 1. An article , comprising:a metal substrate, andan enamel composite layer formed on the metal substrate, the enamel composite layer mainly comprising silicon oxide, aluminium oxide, sodium oxide, potassium oxide, and fiber reinforced materials.2. The coated articles claimed in claim 1 , wherein in the enamel composite layer claim 1 , the mass percentage of the fiber reinforced materials is about 8-15%.3. The coated articles claimed in claim 2 , wherein the fiber reinforced materials comprise at least one fiber selected from a group consisting of carbon fiber claim 2 , glass fiber and boron fiber.4. The coated articles claimed in claim 1 , wherein in the enamel composite layer claim 1 , the mass percentage of the silicon oxide is about 60-70%.5. The coated articles claimed in claim 1 , wherein in the enamel composite layer claim 1 , the mass percentage of the aluminum oxide is about 15-20%.6. The coated articles claimed in claim 1 , wherein in the enamel composite layer claim 1 , the mass percentage of the sodium oxide is about 4-6%.7. The coated articles claimed in claim 1 , wherein in the enamel composite layer claim 1 , the mass percentage of the potassium oxide is about 4-6%.8. The coated articles claimed in claim 4 , wherein the enamel composite coating may further comprise a pigment selected from a group consisting of ferric oxide claim 4 , calcium oxide claim 4 , magnesium oxide claim 4 , and titanium oxide.9. The coated articles claimed in claim 8 , wherein the mass percentage of the pigment is about 1-9%.1013. The coated articles claimed in claim 4 , wherein the thickness of the enamel composite layer is about 50 μm to about 150 μm.11. A method for ...

Method for making patterns on metal article and the resulting metal article

A method for making patterns on a metal article comprises providing a metal substrate having an outer surface. A light-absorbing coating is formed on selected regions of the outer surface to reduce the surface laser reflectivity of the metal substrate. The selected regions cooperatively have a shape of a desired pattern. The selected regions are treated by laser-quenching, thereby hardening the selected regions. The outer surface is sandblasted, enabling the outer surface besides the selected regions to have a greater surface roughness than the selected regions. A metal article made by the method is also provided.

METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE

Disclosed is a method for testing a light-emitting device comprising the steps of: providing an integrating sphere comprising an inlet port and a first exit port; disposing the light-emitting device close to the inlet port of the integrating sphere; providing a current source to drive the light-emitting device to form an image of the light-emitting device in driven state; providing an image receiving device and to receive the image of the light-emitting device, wherein the image receiving device is connected to the first exit port of the integrating sphere; and determining a luminous intensity of the light-emitting device according to the image. An apparatus for testing a light-emitting device is also disclosed. The apparatus for testing a light-emitting device comprises: an integrating sphere comprising an inlet port and a first exit port, wherein the light-emitting device is disposed close to the inlet port of the integrating sphere; an image receiving device connected to the first exit port of the integrating sphere for receiving an image of the light-emitting device; and a processing unit coupled to image receiving device for determining a luminous intensity of the light-emitting device. 1. An apparatus for testing a light-emitting device , comprising:an integrating sphere comprising an inlet port and a first exit port, wherein the light-emitting device is disposed close to the inlet port of the integrating sphere;an image receiving device connected to the first exit port of the integrating sphere for receiving an image of the light-emitting device; anda processing unit coupled to image receiving device for determining a luminous intensity of the light-emitting device.2. The apparatus as claimed in claim 1 , wherein the image receiving device comprises a microscope.3. The apparatus as claimed in claim 2 , further comprising an image sensor connected to the microscope for capturing the image of the light-emitting device.4. The apparatus as claimed in claim 3 , ...

COATED ARTICLE AND METHOD FOR MAKING THE COATED ARTICLE

A coated article includes a metallic substrate, a fiber layer directly formed on the metallic substrate, and an enamel layer directly formed on the fiber layer. The enamel layer mainly contains silicon oxide, aluminum oxide, sodium oxide, potassium oxide, and fiber reinforced composite. A method for making the coated article is also described. 1. A coated article , comprising:a metallic substrate;a fiber layer directly formed on the metallic substrate; andan enamel layer directly formed on the fiber layer, the enamel layer mainly comprising silicon oxide, aluminum oxide, sodium oxide, potassium oxide, and fiber reinforced composite.2. The coated article as claimed in claim 1 , wherein components of the fiber reinforced composite are the same as those of the fiber layer claim 1 , the component is one or more selected from a group consisting of carbon fiber claim 1 , glass fiber claim 1 , and boron fiber.3. The coated article as claimed in claim 2 , wherein in the enamel layer claim 2 , the silicon oxide has a mass percentage of about 60% to about 70% claim 2 , the aluminum oxide has a mass percentage of about 15% to about 20% claim 2 , the sodium oxide has a mass percentage of about 4% to about 6% claim 2 , the potassium oxide has a mass percentage of about 4% to about 6% claim 2 , and the fiber reinforced composite has a mass percentage of about 8% to about 15%.4. The coated article as claimed in claim 1 , wherein the enamel layer further comprises iron oxide claim 1 , calcium oxide claim 1 , magnesium oxide claim 1 , and titanium oxide.5. The coated article as claimed in claim 1 , wherein the enamel layer has a thickness of about 0.015 mm to about 0.035 mm.6. The coated article as claimed in claim 1 , wherein the fiber layer has a thickness of about 0.03 mm to about 0.06 mm.7. The coated article as claimed in claim 1 , wherein the metallic substrate is made of stainless steel or titanium alloy.8. A method for making a coated article claim 1 , comprising:providing a ...

Method for forming patterns on substrates and articles manufactured by the same

A method for forming pattern on substrate comprises steps of: providing a metal substrate; amorphousizing the metal substrate to from an amorphous pattern layer in the metal substrate; etching the metal substrate and forming an etching portion in the surface of the metal substrate which is not covered with the amorphous pattern layer. The article manufactured by the method is also provided.

DEVICE HOUSING AND METHOD FOR MAKING THE SAME

A device housing includes a metallic substrate, a pattern element formed in the substrate, and a transparent or translucent decorative layer formed on the substrate and the pattern layer. The substrate defines a receiving space therein, and the pattern element is formed in the receiving space. The pattern element is made of thermosetting plastic. A method for making the device housing is also described. 1. A device housing , comprising:a metallic substrate defining a receiving space therein;a pattern element directly formed in the receiving space, the pattern element being made of thermosetting plastic; anda transparent or translucent decorative layer directly formed on the substrate and the pattern layer.2. The device housing as claimed in claim 1 , wherein the thermosetting plastic is epoxy resin.3. The device housing as claimed in claim 2 , wherein the epoxy resin comprises pigment.4. The device housing as claimed in claim 1 , wherein the decorative layer is a metallic layer claim 1 , an ink layer claim 1 , or a paint layer.5. The device housing as claimed in claim 1 , wherein the metallic substrate is made of stainless steel or aluminum alloy.6. A method for making a device housing claim 1 , comprising:providing a metallic substrate;forming a receiving space in the substrate;forming a pattern element in the substrate by molding thermosetting plastic in the receiving space;forming a transparent or translucent decorative layer on the substrate and the pattern element.7. The method as claimed in claim 6 , wherein molding thermosetting plastic in the receiving space uses a mold claim 6 , the mold comprises an upper mold claim 6 , a lower mold claim 6 , and a cavity formed between the upper mold and the lower mold claim 6 , the upper mold defines a gate claim 6 , the substrate is located in the cavity claim 6 , and thermosetting plastic is injected through the gate to fill the receiving space and heated to form the pattern element.8. The method as claimed in claim 7 ...

Method for surface treating plastic products and plastic products made thereby

A method for surface treating plastic products includes providing a plastic substrate; forming a base paint layer on the plastic substrate; forming a flat paint layer on the base paint layer, the flat paint layer made of a flat paint and having an initial specular gloss at 60° geometry of about 5-10; partially masking the flat paint layer; and polishing unmasked portions of the flat paint layer to achieve a specular gloss at 60° geometry of about 80-90. A plastic product made by the present method is also described.

PARCEL DELIVERY METHOD USING AN UNMANNED AERIAL VEHICLE

In a parcel delivery method and system, a server continuously receives recipient geographic position information (GPI) from a recipient terminal associated with and carried by a recipient, and unmanned aerial vehicle (UAV) GPI from a UAV loaded with a to-be-delivered parcel via a communication network, and transmits, to the UAV, destination information, which is the recipient GPI that is last received by the server. The UAV transports, based on the destination information from the server, the parcel to an unloading position where the recipient terminal is located. 1. A parcel delivery method to be implemented by a parcel delivery system , the parcel delivery system including a server , an unmanned aerial vehicle (UAV) and a recipient terminal that are connected to a communication network , the recipient terminal being associated with and carried by a recipient , said parcel delivery method comprising the steps of:a) continuously receiving, by the server, recipient geographic position information from the recipient terminal and UAV geographic position information from the UAV via the communication network;b) after receiving via the communication network a delivery request for a parcel, which has been previously loaded on the UAV and is to be delivered to the recipient, transmitting, by the server, the recipient geographic position information, which is last received by the server and which serves as destination information, to the UAV via the communication network; andc) after receiving the destination information from the server, transporting, by the UAV based at least on the destination information, the parcel to an unloading position where the recipient terminal is located.2. The parcel delivery method as claimed in claim 1 , wherein step c) further includes the sub-steps of:c1) in response to receipt of the destination information from the server, determining, by the UAV, a delivery flight path to the unloading position based at least on the destination ...

OPERATION METHOD OF MULTI-LEVEL MEMORY

An operation method of a multi-level memory is provided. A first read voltage lower than a standard read voltage is applied to a doped region in a substrate at one side of a control gate of the memory, so as to determine whether a first storage position and a second storage position are both at the lowest level. 1. An operation method of a multi-level memory , suitable for a multi-level memory having a first storage position and a second storage position , wherein multiple levels of the multi-level memory correspond to different read current values and the multi-level memory comprises a substrate , a control gate , a charge storage layer located between the substrate and the control gate , and a plurality of doped regions located in the substrate beside the control gate , the operation method comprising:applying a first read voltage lower than a standard read voltage to one of the doped regions in the substrate at one side of the control gate, so as to determine whether the first storage position and the second storage position are both at a lowest level.2. The operation method of claim 1 , wherein when the first storage position and the second storage position are not at the lowest level claim 1 , a second read voltage lower than the standard read voltage is applied to the doped region adjacent to the first storage position claim 1 , so as to determine a level of the second storage position.3. The operation method of claim 2 , wherein if the second storage position is at the lowest level claim 2 , a third read voltage lower than the standard read voltage is applied to the doped region adjacent to the second storage position claim 2 , so as to determine a level of the first storage position.4. The operation method of claim 2 , wherein if the second storage position is not at the lowest level claim 2 , the standard read voltage is applied to the doped region adjacent to the second storage position claim 2 , so as to determine a level of the first storage position.5. ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V. 1. A light-emitting device , comprising:a substrate;a semiconductor structure formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the substrate comprises an exposed surface not covered by the semiconductor structure;a part penetrating the second semiconductor layer and the active layer to expose a first surface of the first semiconductor layer;a first electrode formed on the part, extending from the exposed surface of the substrate, along the first surface of the first semiconductor layer and an outside wall of the second semiconductor layer to overlap the second semiconductor layer; anda second electrode formed on the second semiconductor layer, wherein the first electrode and the second electrode are separated apart by a distance smaller than 50 μm.2. The light-emitting device according to claim 1 , wherein the second electrode is surrounded by the first ...

MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

A memory device includes a conductive strip stack structure having conductive strips and insulating layers stacked in a staggered manner and a channel opening passing through the conductive strips and the insulating layer; a memory layer disposed in the channel opening and overlying the conductive strips; a channel layer overlying the memory layer; a semiconductor pad extending upwards from a bottom of the channel opening beyond an upper surface of a bottom conductive strip, in contact with the channel layer, and electrically isolated from the conductive strips; wherein the channel layer includes a first portion having a first doping concentration and a second portion having a second doping concentration disposed on the first portion. 1. A memory device comprising:a conductive strip stack structure, comprising a plurality of conductive strips and a plurality of insulating layers stacked in a staggered manner with the plurality of conductive strips, wherein the conductive strip stack structure has at least one channel opening passing through the plurality of conductive strips and the plurality of insulating layers;a memory layer, disposed in the at least one channel opening and overlying portions of the plurality of conductive strips that are exposed from the at least one channel opening;a channel layer, disposed in the at least one channel opening and overlying the memory layer; anda doped semiconductor pad, extending upwards from a bottom of the at least one channel opening beyond an upper surface of a bottom conductive strip in the plurality of conductive strips, in contact with the channel layer, and electrically isolated from the plurality of conductive strips;wherein, the channel layer comprises a first portion having a first doping concentration and a second portion having a second doping concentration disposed on the first portion.2. The memory device according to claim 1 , wherein the second doping concentration is less than the first doping concentration.3. ...

TRANSISTOR WITH STRAINED SUPERLATTICE AS SOURCE/DRAIN REGION

A transistor with strained superlattices as source/drain regions includes a substrate. A gate structure is disposed on the substrate. Two superlattices are respectively disposed at two sides of the gate structure and embedded in the substrate. The superlattices are strained. Each of the superlattices is formed by a repeated alternating stacked structure including a first epitaxial silicon germanium and a second epitaxial silicon germanium. The superlattices serve as source/drain regions of the transistor. 1: A transistor with strained superlattices as source/drain regions , comprising:a substrate;a gate structure disposed on the substrate; andtwo superlattices respectively disposed at two sides of the gate structure and embedded in the substrate, wherein the two superlattices are strained, the each of the two superlattices is formed by a repeated alternating stacked structure including a first epitaxial silicon germanium and a second epitaxial silicon germanium, and the two superlattices serve as source/drain regions of the transistor.2: The transistor with strained superlattices as source/drain regions of claim 1 , further comprising a vertical direction perpendicular to a top surface of the substrate claim 1 , wherein the germanium concentration in each of the two superlattices creates a Gaussian distribution along the vertical distribution.3: The transistor with strained superlattices as source/drain regions of claim 1 , further comprising boron dopants doped in the two superlattices.4: The transistor with strained superlattices as source/drain regions of claim 1 , wherein a thickness of the first epitaxial silicon germanium is smaller than a thickness of the second epitaxial silicon germanium.5: The transistor with strained superlattices as source/drain regions of claim 1 , wherein a ratio of a thickness of the first epitaxial silicon germanium to a thickness of the second epitaxial silicon germanium is 1:1.5.6: The transistor with strained superlattices as ...

MEMORY DEVICE AND OPERATION METHOD THEREFOR

Provided is an operation method for a memory device, comprising: preparing to program a target word line; judging whether at least one memory cell of a plurality of memory cells of an adjacent word line is to be programmed to a first target state; and based on whether the at least one memory cell of the memory cells of the adjacent word line is to be programmed to the first target state, determining to program the adjacent word line first or to program the target word line first. 1. An operation method for a memory device , comprising:preparing to program a target word line;judging whether at least one memory cell of a plurality of memory cells of an adjacent word line is to be programmed to a first target state; andbased on whether the at least one memory cell of the memory cells of the adjacent word line is to be programmed to the first target state, determining to program the adjacent word line first or to program the target word line first.2. The operation method according to claim 1 , whereinwhen the at least one memory cell of the memory cells of the adjacent word line is to be programmed to the first target state, the adjacent word line is programmed earlier than the target word line.3. The operation method according to claim 1 , whereinwhen none of the memory cells of the adjacent word line is to be programmed to the first target state, the target word line is programmed earlier than the adjacent word line.4. The operation method according to claim 1 , further including:preparing to read the target word line;determining whether at least one memory cell of a plurality of memory cells of the target word line is programmed to a second target state; andbased on whether the at least one memory cell of the memory cells of the target word line is programmed to the second target state, applying an original pass voltage or an increased pass voltage to the adjacent word line.5. The operation method according to claim 4 , whereinwhen the at least one memory cell of the ...

METHOD FOR COMPRESSING INITIAL WEIGHT MATRIX CAPABLE OF REDUCING MEMORY SPACE

A method for compressing an initial weight matrix includes generating a first weight matrix and a second weight matrix according to the initial weight matrix where the initial weight matrix is a Kronecker product of a transposed matrix of the second weight matrix and the first weight matrix; optimizing the first and second weight matrixes to generate an optimized first weight matrix and an optimized second weight matrix; generating a processed data matrix according to an initial data matrix where the initial data matrix is vectorization of the processed data matrix; multiplying the processed data matrix by the optimized first weight matrix to generate a first product; multiplying the optimized second weight matrix by the first product to generate a second product; and vectorizing the second product. The initial weight matrix requires a larger memory space than a combined memory space of the first and second weight matrixes. 1. A method for compressing an initial weight matrix , comprising:generating a first weight matrix and a second weight matrix according to the initial weight matrix wherein the initial weight matrix is a Kronecker product of a transposed matrix of the second weight matrix and the first weight matrix;optimizing the first weight matrix and the second weight matrix to generate an optimized first weight matrix and an optimized second weight matrix;generating a processed data matrix according to an initial data matrix wherein the initial data matrix is vectorization of the processed data matrix;multiplying the processed data matrix by the optimized first weight matrix to generate a first product;multiplying the optimized second weight matrix by the first product to generate a second product; andvectorizing the second product to generate vectorization of the second product;wherein the vectorization of the second product is equal to a product of the initial weight matrix and the initial data matrix, and the initial weight matrix requires a larger memory ...

Semiconductor structure and method for manufacturing the same

A semiconductor structure includes a substrate, a stack of alternate conductive layers and insulating layers, a hole, and an active structure. The stack is disposed on the substrate. The conductive layers include an i th conductive layer and a j th conductive layer disposed above the i th conductive layer, the i th conductive layer has a thickness t i , the j th conductive layer has a thickness t j , and t j is larger than t i . The hole penetrates through the stack. The hole has a diameter D i and a diameter D j corresponding to the i th conductive layer and the j th conductive layer, respectively, and D j is larger than D i . The active structure is disposed in the hole. The active structure includes a channel layer. The channel layer is disposed along a sidewall of the hole and isolated from the conductive layers of the stack.

Vertical gaa flash memory including two-transistor memory cells

A memory device comprises an array of two-transistor memory cells, two-transistor memory cells in the array including a vertical select transistor and a vertical data storage transistor. The array comprises a plurality of stacks of conductive lines, a stack of conductive lines including a select gate line and a word line adjacent the select gate line. The device comprises an array of vertical channel lines disposed through the conductive lines to a reference line, gate dielectric structures surrounding the vertical channel lines at channel regions of vertical select transistors in the array of vertical channel lines and the select gate lines, charge storage structures surrounding the vertical channel lines at channel regions of vertical data storage transistors in the array of vertical channel lines and the word lines, and bit lines coupled to the vertical channel lines via upper ends of the vertical channel lines.

World Band Radio Frequency Front End Module, System and Method Thereof

The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. 1. An integrated module for use in a radio frequency (RF) front end system comprising:a plurality of broadband power amplifiers each configured to amplify an RF signal;a first switch module connected to the plurality of broadband power amplifiers, wherein said first switch module is a multi pole, multi throw switch containing a plurality of switches which are selectively operable to couple the RF signal to one of a plurality of transmission paths, each of said transmission paths configured to transmit a plurality of different frequency bands; anda 5 GigaHertz (GHz) power amplifier which operates substantially in the range of 4.9 GHz to 6 GHz.2. (canceled)3. The module of claim 1 , wherein the plurality of different frequency bands include bands 38 claim 1 , 40 claim 1 , 41 claim 1 , and 7.4. (canceled)5. (canceled)6. The module of claim 1 , wherein the plurality of different frequencies are in the range of 698 MHz to 2.7 GHz.7. The module of claim 1 , wherein the plurality of broadband power amplifiers comprise at least two broadband power amplifiers.8. The module of claim 1 , further comprising:a plurality of filters connected to the outputs of the first switch module.9. The module of claim 1 , further comprising:a second switch module coupled to the plurality of filters and capable of outputting frequencies in the range of 698 MHz to 3.8 GHz.10. The module of claim 9 , further comprising:a third ...

NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF

A non-volatile memory and a manufacturing method thereof are provided. The non-volatile memory including a gate structure disposed on a substrate, doped regions, charge storage layers, and a first dielectric layer. There are recesses in the substrate at two sides of the gate structure. The gate structure includes a gate dielectric layer disposed on the substrate and a gate disposed on the gate dielectric layer. There is an interface between the gate dielectric layer and the substrate. The doped regions are disposed in the substrate around the recesses. The charge storage layers are disposed in the recesses, and a top surface of each of the charge storage layers is higher than the interface. The first dielectric layer is disposed between the charge storage layers and the substrate, and between the charge storage layers and the gate structure. 1. A non-volatile memory , comprising: a gate dielectric layer, disposed on the substrate, wherein there is an interface between the gate dielectric layer and the substrate; and', 'a gate, disposed on the gate dielectric layer;, 'a gate structure, disposed on a substrate, wherein there are recesses in the substrate at two sides of the gate structure, the gate structure comprisingdoped regions, disposed in the substrate around the recesses;charge storage layers, disposed in the recesses, and a top surface of each of the charge storage layers is higher than the interface; anda first dielectric layer, disposed between the charge storage layers and the substrate, and between the charge storage layers and the gate structure.2. The non-volatile memory as claimed in claim 1 , wherein the distance is between 0.005 μm and 0.01 μm.3. The non-volatile memory as claimed in claim 1 , wherein a thickness of the charge storage layers is between 100 Å to 150 Å.4. The non-volatile memory as claimed in claim 1 , wherein the recesses have a tilting sidewall.5. The non-volatile memory as claimed in claim 1 , wherein a material of the charge storage ...

INTELLIGENT TOOTH HEALTH-CARE SYSTEM AND INTELLIGENT TOOTH CLEANING DEVICE THEREOF

An intelligent tooth health-care system and an intelligent tooth cleaning device thereof. The intelligent tooth cleaning device includes a plurality of sensors capable of detecting conditions of mouth and teeth of a user. The user may obtain data relating to his/her health when he/she cleans the teeth. The sensors also detect the movement of the intelligent tooth cleaning device. The data of movement are transmitted to a mobile device and input to a computer tooth-cleaning game executed in the mobile device, whereby the user is guided by the computer tooth-cleaning game to clean his/her teeth. The data obtained by the sensors can also be transmitted to a server in the cloud for health analysis. 1. An intelligent tooth cleaning device , comprising:a holding member having a first end and a second end;a tooth cleaning member having a brush head, a connecting part and a plurality of bristles, wherein the connecting part is connected to the brush head and detachably connected to the first end, and the bristles are arranged on the brush head;a first processor disposed in the holding member;a driver disposed in the holding member and electrically connected to the first processor;a transmission member extending outward from the first end of the holding member and connected the driver and the tooth cleaning member, wherein the torsion force of the driver is transmitted to the tooth cleaning member via the transmission member to rotate or vibrate the tooth cleaning member;a first wireless transceiver module disposed in the holding member and electrically connected to the first processor;a displacement detection module disposed in the holding member, electrically connected to the first processor, and configured to detect the position of the holding member and generate a displacement signal;a saliva detection module disposed on the surface of the brush head of the tooth cleaning member, electrically connected to the first processor, and configured to detect the saliva of a ...

Impulse-like Gesture Recognition Method, and Impulse-like Gesture Recognition System

A performing device of an impulse-like gesture recognition system executes an impulse-like gesture recognition method. A performing procedure of the impulse-like gesture recognition method includes steps of: receiving a sensing signal from a sensing unit; determining a prediction with at least one impulse-like label according to the sensing frames by a deep learning-based model; and classifying at least one gesture event according to the prediction. The gesture event is classified to determine the motion of the user. Since the at least one impulse-like label is used to label at least one detection score of the deep learning-based model, the detection score is non-decreasing, reaction time of the at least one gesture event for an incoming gesture is fast, rapid consecutive gestures are easily decomposed, and an expensive post-processing is not needed.

MEMORY DEVICE WITH CONFINED CHARGE STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A memory device includes a semiconductor substrate, a stack, a charge storage structure, a blocking layer, a tunneling layer, and a channel layer. The stack is disposed on a principle surface of the semiconductor substrate and includes alternately arranged conductive layers and insulating layers. The charge storage structure includes bent storage structures or discrete storage segments. Each bent storage structure or each discrete storage segment is substantially aligned with a corresponding one of the conductive layers in a direction parallel to the principle surface. The blocking layer is at least partially interposed between the conductive layers and the bent storage structures or between the conductive layers and the discrete storage segments. The tunneling layer is disposed on the bent storage structures or the discrete storage segments. The channel layer is disposed on the tunneling layer. 1. A memory device , comprising:a semiconductor substrate having a principle surface;a stack disposed on the principle surface of the semiconductor substrate and comprising alternately arranged conductive layers and insulating layers;a charge storage structure comprising a plurality of bent storage structures or discrete storage segments, the bent storage structures or the discrete storage segments being opposite to sidewalls of the conductive layers, wherein each bent storage structure or each discrete storage segment is substantially aligned with a corresponding one of the conductive layers in a direction parallel to the principle surface;a blocking layer at least partially interposed between the conductive layers and the bent storage structures or between the conductive layers and the discrete storage segments;a tunneling layer on the bent storage structures or the discrete storage segments; anda channel layer on the tunneling layer.2. The memory device according to claim 1 , wherein the charge storage structure comprises the bent storage structures claim 1 , and the ...

NAND FLASH OPERATING TECHNIQUES

A programming operation for high density memory, like 3D NAND flash memory, modifies the waveforms applied during program operations to mitigate unwanted disturbance of memory cells not selected for programming during the operation. Generally, the method provides for applying a bias arrangement during an interval of time between program verify pass voltages and program pass voltages in a program sequence that can include a soft ramp down, and pre-turn-on voltages designed to reduce variations in the potential distribution on floating channels of unselected NAND strings during a program operation. 1. A method for programming a NAND memory , comprising:executing a program sequence to program a memory cell on a selected word line in a NAND string including a plurality of unselected word lines, the program sequence including a program verify procedure followed by a program procedure;in the program verify procedure, applying a verify read voltage pulse to the selected word line, and verify pass voltage pulses to unselected word lines;in the program procedure, pre-charging the NAND string, and then applying a program voltage pulse to the selected word line and program pass voltage pulses to unselected word lines; andapplying an intermediate bias voltage to at least one unselected word line in a time interval between the verify pass voltage pulse and the program pass voltage pulse, the intermediate bias voltage having a voltage level above ground tending to turn on a channel of a memory cell at the at least one unselected word line.2. The method of claim 1 , the intermediate bias voltage having a maximum voltage level less than a maximum level of the program pass voltage pulse.3. The method of claim 1 , the bias voltage having a maximum voltage level greater than or equal to a maximum threshold voltage for a programmed cell.4. The method of claim 1 , the bias voltage having a maximum voltage level in a range from a maximum threshold voltage VtMAX for a programmed cell and ...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Provided is a semiconductor device. Two stack layers are disposed on a substrate of a first conductivity type. Each of stack layers includes a dielectric layer and a conductive layer. The dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. First doped region of a second conductivity type has a first dopant and is disposed in the substrate between the stack layers. A pre-amorphization implantation (PAI) region is disposed in the first doped region. A second doped region of the second conductivity type has a second dopant and is disposed in the PAI region. The first conductivity type is different from the second conductivity type. A diffusion rate of the second dopant is faster than a diffusion rate of the first dopant, and a thermal activation of the second dopant is higher than that of the first dopant. 1. A semiconductor device , comprising:two stack layers disposed on a substrate of a first conductivity type, wherein each of the stack layers comprises:a dielectric layer disposed on the substrate; anda conductive layer disposed on the dielectric layer;a first doped region of a second conductivity type, the first doped region comprising a first dopant therein and being disposed in the substrate between the stack layers;a pre-amorphization implantation (PAI) region disposed in the first doped region; anda second doped region of the second conductivity type, the second doped region comprising a second dopant therein and being disposed in the PAI region, wherein the first conductivity type is different from the second conductivity type, a diffusion rate of the second dopant is faster than a diffusion rate of the first dopant, and a thermal activation of the second dopant is higher than a thermal activation of the first dopant.2. The semiconductor device according to claim 1 , further comprising a third doped region of the second conductivity type claim 1 , the third doped region disposed in the substrate under the ...

METHOD FOR OPERATING MEMORY ARRAY

“A method for operating a memory array includes an all programming step, an erasing step and a selectively programming step. The all programming step is to program all of memory cells of a NAND string. The erasing step is to erase the all of the memory cells of the string after the all programming step. The selectively programming step is to program a portion of the all of memory cells of the NAND string after the erasing step. The NAND string includes a pillar channel layer, a pillar memory layer and control gates. The pillar memory layer is surrounded by the control gates separated from each other. The memory cells are defined at intersections of the pillar channel layer and the control gates.” 1. A method for operating a memory array , comprising:an all programming step to program all memory cells of a NAND string, wherein the NAND string comprises:a pillar channel layer;a pillar memory layer; andcontrol gates spaced apart from each other and surrounding the pillar memory layer, the memory cells are defined at cross-points between the pillar channel layer and the control gates;an erasing step to erase the all of the memory cells of the NAND string after the all programming step; anda selectively programming step to program a portion of the all of memory cells of the NAND string after the erasing step.2. The method for operating the memory array according to claim 1 , wherein the erasing step is directly performed after the all programming step.3. The method for operating the memory array according to claim 1 , comprising performing the erasing step at least two times after the all programming step is performed.4. The method for operating the memory array according to claim 1 , further comprising another erasing step to erase the all of the memory cells of the NAND string claim 1 , wherein the selectively programming step is between the erasing step and the another erasing step.5. The method for operating the memory array according to claim 1 , wherein the memory ...

NON-VOLATILE MEMORY

A non-volatile memory is provided. The non-volatile memory includes a oxide and polysilicon stack structure and charge storage layers. The oxide and polysilicon stack structure is disposed on a substrate. There are recesses in the substrate at two sides of the oxide and polysilicon stack structure. The oxide and polysilicon stack structure includes an oxide layer and a polysilicon layer. The oxide layer is disposed on the substrate, wherein there is an interface between the oxide layer and the substrate. The polysilicon layer is disposed on the oxide layer. The charge storage layers are disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface. 1. A non-volatile memory , comprising: an oxide layer, disposed on the substrate, wherein there is an interface between the oxide layer and the substrate; and', 'a polysilicon layer, disposed on the oxide layer; and, 'an oxide and polysilicon stack structure, disposed on a substrate, wherein there are recesses in the substrate at two sides of the oxide and polysilicon stack structure, the oxide and polysilicon stack structure comprisingcharge storage layers, disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface.2. The non-volatile memory as claimed in claim 1 , wherein a thickness of the charge storage layers is between 100 Å to 150 Å.3. The non-volatile memory as claimed in claim 1 , wherein the recesses have a tilting sidewall.4. The non-volatile memory as claimed in claim 1 , wherein a material of the charge storage layers comprises nitride or a high dielectric constant material.5. The non-volatile memory as claimed in claim 1 , further comprising dielectric layers disposed on the charge storage layers claim 1 , wherein a top surface of each of the dielectric layers is coplanar ...

World Band Radio Frequency Front End Module, System And Method Thereof

The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. 1. An integrated module for use in a radio frequency (RF) front end system comprising:a broadband power amplifier configured to amplify an RF signal; anda first switch module connected to the broadband power amplifier, said first switch module containing at least one switch which is selectively operable to couple the RF signal to one of a plurality of transmission paths, each of said transmission paths configured to transmit a different frequency band.2. The module of claim 1 , wherein the broadband power amplifier and said first switch module are part of a single die.3. The module of claim 1 , wherein the plurality of frequency bands include bands 38 claim 1 , 40 claim 1 , 41 claim 1 , and 7.4. An integrated module for use in a radio frequency (RF) front end system comprising:a plurality of broadband power amplifiers each configured to amplify an RF signal; anda first switch module connected to the plurality of broadband power amplifiers, said first switch module is a multi pole, multi throw switch containing a plurality of switches which are selectively operable to couple the RF signal to one of a plurality of transmission paths, each of said transmission paths configured to transmit a different frequency band.5. The module of claim 4 , wherein the plurality of broadband power amplifiers and said first switch module are part of a single die.6. The module of claim 4 , wherein the plurality of ...

Range doppler angle detection method and range doppler angle detection device

A range Doppler angle detection method executed by a range Doppler angle detection device includes steps of: receiving a first sensing signal and a second sensing signal; performing 1D Fast Fourier Transform (FFT) and 2D FFT to the first sensing signal for calculating one first 2D FFT map; performing the 1D FFT and the 2D FFT to the second sensing signal for calculating one second 2D FFT map; picking up one column of the first 2D FFT map and one column of the second 2D FFT map according to a given Doppler index; performing the 3D FFT to the picked column of the first 2D FFT map and the picked column of the second 2D FFT map for calculating a range Doppler angle. Therefore, a computation loading of the gesture recognition function can be reduced.

Semiconductor structure

A semiconductor structure has a MOSFET and a substrate to accommodate the MOSFET. The MOSFET has a gate, a source, and a drain in the substrate. A first substrate region surrounding the MOSFET is doped with a stress enhancer, wherein the stress enhancer is configured to generate a tensile stress in the MOSFET's channel and the tensile stress is along the channel's widthwise direction.

EVENT-BASED IMAGE MANAGEMENT USING CLUSTERING

Managing a plurality of images may include generating, using a processor, clusters of images from a plurality of images having locations and timestamps. The clusters may represent events and may be generated according to a distance metric based upon geographic distance and time difference between consecutive pairs of the plurality of images sorted according to time. Selected clusters may be merged, using the processor, into a merged cluster representing a trip based upon geographic distance between the clusters and unique dates within the clusters. The plurality of images may be displayed, using the processor, organized according to the trip. 1. A method of managing a plurality of images , comprising:generating, using a processor, clusters of images from a plurality of images having locations and timestamps, wherein the clusters represent events and are generated according to a distance metric based upon geographic distance and time difference between consecutive pairs of the plurality of images sorted according to time;merging, using the processor, selected clusters into a merged cluster representing a trip based upon geographic distance between the clusters and unique dates within the clusters; anddisplaying, using the processor, the plurality of images organized according to the trip.2. The method of claim 1 , further comprising:selectively including an additional image without a location into the trip according to a timestamp of the additional image.3. The method of claim 1 , further comprising:clustering a further plurality of images with timestamps and without locations into additional trips according to time.4. The method of claim 1 , wherein generating clusters of images from the plurality of images having locations and timestamps comprises:sorting the plurality of images according to timestamps;determining the distance metric for consecutive pairs of the sorted plurality of images; anditeratively clustering the sorted plurality of images according to the ...

Non-volatile memory and method of operation thereof

A method of altering threshold voltage distribution of a non-volatile MLC memory before the memory is programmed according to a pre-designated coding table. The method includes grouping a plurality of cells which are pre-designated to have the same first bit voltage in a same main state and then grouping the cells in a selected main state into a same sub state if they have the same pre-designated second bit voltage. The method further has a step by elevating the first bit voltage of the cells with highest pre-designated second bit voltage to a voltage which is greater than the voltage of the pre-designated highest main state.

LI-ION BATTERY POSITIVE ELECTRODE MATERIAL, METHOD PREPARING THE SAME AND APPLICATION THEREOF

The present application discloses a Li-ion battery positive electrode material, a method for preparing the same and application thereof. The positive electrode material can reduce the relative volume change rate of the positive electrode material in insertion and deinsertion states of Li ions, and meanwhile can efficiently restrain Mn in the positive material from dissolving out during charging and discharging cycles, thereby improving the crystal structure stability of the positive electrode in the working state. A Li-ion battery applying such a positive electrode material has excellent cycle performance, safety and high-temperature storage performance. 1. A Li-ion battery positive electrode material , comprising a compound having a chemical constitution represented by formula I:{'br': None, 'LiMnxFe1-xP1-aSibMcO4-dFd \u2003\u2003Formula I'}in which, M is selected from at least one of As, B, Cl and S; 0.1≦x≦0.9, 0 Подробнее

Non-Volatile Memory And Manufacturing Method Of Same

A non-volatile memory includes a substrate, a charge trapping structure disposed on the substrate, a buffer layer disposed on the charge trapping structure, and a plurality of conductive layers disposed on the buffer layer. 1. A non-volatile memory , comprising:a substrate;a charge trapping structure disposed on the substrate;a buffer layer disposed on the charge trapping structure; anda plurality of conductive layers directly disposed on the buffer layer.2. The non-volatile memory of claim 1 , wherein the buffer layer is made of a nitride material selected from a group of SiNand silicon-rich nitride.3. The non-volatile memory of claim 1 , wherein the buffer layer is made of a high-k material selected from a group of HfO claim 1 , TiO claim 1 , ZrO claim 1 , TaO claim 1 , or AlO.4. The non-volatile memory of claim 1 , wherein the buffer layer is made of a material having an etching rate lower than that of the conductive layers.5. The non-volatile memory of claim 1 , wherein a thickness of the buffer layer is about 10 Å to about 20 Å.6. The non-volatile memory of claim 1 , wherein the charge trapping structure includes a bottom oxide layer claim 1 , a charge trapping layer on the bottom oxide layer claim 1 , and a top oxide layer on the charge trapping layer.7. The non-volatile memory of claim 6 , wherein the charge trapping layer is made of a nitride material or a high-k material.8. The non-volatile memory of claim 1 , further including:a first doped region having a stripe shape and extending along a first direction orthogonal to a second direction along which the plurality of conductive layers extend; anda second doped region having a stripe shape and extending along the first direction,wherein the charge trapping structure is disposed in a region between the first doped region and the second doped region.9. A method of manufacturing a non-volatile memory claim 1 , comprising;forming a charge trapping structure on a substrate;forming a buffer layer on the charge ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V. 1. A light-emitting device , comprising:a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer;a first electrode formed in the via and on the second semiconductor layer;a second electrode formed on the second semiconductor layer; anda third insulating structure covering the first electrode, the second electrode and the semiconductor structure, the third insulating structure comprising a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively comprises a metal layer contacting the third insulating structure, the metal layer comprises a material comprising a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger ...

HANDY BASE STATION SYSTEM, DEVICE AND METHOD

A Handy Base Station (HBS) which is capable of connecting through a base portion into a power socket (e.g., lamp socket). The HBS may have a plurality of functional modules capable of being detachably mounted in a housing. One of the functional modules may be a light emitter such as a light emitting diode (LED). Another rmodule may be a communication module which may communicate using a wire line or wirelessly using standard wireless communication protocols. Further disclosed is a combination unit which has the HBS located on a pole such as a utility pole with a landing pad for an unmanned aerial vehicle (UAV) to allow the UAV a recharging location between deliveries and to allow the HBS to guide the UAV on its flight. 1. A Handy Base Station (HBS) comprising:a housing having a base portion that is capable of being fitted into a lamp source socket; anda communication module which is capable of receiving from and transmitting to at least one remote wireless terminal.2. The HBS of claim 1 , wherein the transmissions to and from the HBS are according to a wireless standard selected from the group consisting of: WiFi claim 1 , 3G claim 1 , 4G claim 1 , 5G claim 1 , microwave and mm-wave.3. The HBS of claim 1 , further comprising:a power module; andsaid communication module capable of forwarding the transmissions through an Ethernet over power line to a network.4. The HBS of claim 1 , wherein the HBS is capable of sending wireless communications wirelessly to a second HBS.5. The HBS of claim 1 , wherein the HBS is capable of sending wireless communications from the communication module to exert control over another HBS.6. The HBS of claim 1 , further comprising:an image mapping camera capable of capturing an image of a moving object and reconstructing in a two dimensional or three dimensional image.7. The HBS of further comprising:a sensor for monitoring the environment and reporting through the communication module; andwherein the sensor is from a group of sensors ...

Gesture recognition method, gesture recognition system, and performing device therefore

A performing device of a gesture recognition system executes a performing procedure of a gesture recognition method. The performing procedure includes steps of: receiving a sensing signal; selecting one of sensing frames of the sensing signal; determining a soft label of the selected sensing frame; classifying a gesture event when the soft label of the selected sensing frame is approved. The gesture event is classified to determine the motion of the user. Therefore, the gesture recognition system does not need a predetermined time period to recognize the motion of the user. The time period for recognizing the motion of the user can be dynamical. A total time period for classifying a plurality of motions can be decreased, and the performance of the gesture recognition system can be improved.

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall. 1. A method for fabricating semiconductor device , comprising:forming a gate structure on a substrate;forming a first spacer and a second spacer around the gate structure;forming a recess adjacent to two sides of the second spacer;performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; andforming an epitaxial layer in the recess.2. The method of claim 1 , wherein the first spacer comprises an L-shape and the second spacer comprises an I-shape.3. The method of claim 1 , wherein the first spacer comprises silicon oxide and the second spacer comprises silicon nitride.4. The method of claim 1 , further comprising forming a third spacer around the gate structure before forming the first spacer.5. The method of claim 4 , wherein the third spacer comprises an I-shape.6. The method of claim 1 , further comprising performing the cleaning process to remove part of the second spacer so that a bottom surface of the second spacer is higher than a bottom surface of the first spacer.7. The method of claim 1 , further comprising a cap layer on the epitaxial layer while filling the void.8. The method of claim 7 , wherein the cap layer comprises silicon.9. The method of claim 7 , wherein the cap layer comprises a planar top surface and an inclined sidewall.10. The method of claim 9 , wherein the cap ...

MONITORING SYSTEM AND RELATED IMAGE SEARCHING METHOD

A method of searching an image, which is disclosed in the present invention, includes selecting a first timing and a second timing to generate a first period, obtaining a plurality of first images from a first video streaming within the first period, and setting a second period according to at least one first image so as to obtain a plurality of second images from the first video streaming within the second period. The method of searching the image further includes simultaneously displaying a plurality of third image from a second video streaming within the second period, enlarging a selected image of the second images or the third images, and simultaneously enlarging another image that is captured at the same time as the time when the enlarging selected image is captured. The two enlarging images respectively belong to the first video streaming and the second video streaming. 1. An image searching method applied to a monitoring system having a first video streaming and a second video streaming , the image searching method comprising:selecting a first timing and a second timing to generate a first period;obtaining a plurality of first images from the first video streaming within the first period;setting a second period according to at least one of the plurality of first images so as to obtain a plurality of second images from the first video streaming within the second period;displaying a plurality of third images from the second video streaming within the second period simultaneously;enlarging a selected image from the plurality of second images or from the plurality of third images; andenlarging another image captured at a time equivalent to timing of the enlarged selected image, wherein the two foresaid enlarged images respectively belong to the first video streaming and the second video streaming.2. The image searching method of claim 1 , further comprising:obtaining the plurality of first images within the first period by a predetermined function.3. The image ...

HANDY BASE STATION SYSTEM, DEVICE AND METHOD

A Handy Base Station (HBS) which is capable of connecting through a base portion into a power socket (e.g., lamp socket). The HBS may have a plurality of functional modules capable of being detachably mounted in a housing. One of the functional modules may be a light emitter such as a light emitting diode (LED). Another module may be a communication module which may communicate using a wire line or wirelessly using standard wireless communication protocols. Further disclosed is a combination unit which has the HBS located on a pole such as a utility pole with a landing pad for an unmanned aerial vehicle (UAV) to allow the UAV a recharging location between deliveries and to allow the HBS to guide the UAV on its flight. 1. A system comprising:a plurality of poles each having Handy Base Stations (HBS's) mounted thereon; each HBS having a base portion that is capable of being fitted into a power source socket and a communication module which is capable of transmitting to a remote wireless terminal.2. The system of claim 1 , wherein the communication module communicates to the remote wireless terminal in at least one communication standard of the group consisting of: microwave and millimeter wave (mm-wave).3. The system of wherein each of the plurality of poles is coupled to a backhaul fiber optic network.4. The system of wherein the remote wireless terminal is located in one of the group consisting of a: vehicle claim 1 , aerial drone claim 1 , one of the HBS's claim 1 , and a mobile device.5. A system comprising:a plurality of vehicles each having Handy Base Stations (HBS's) mounted thereon; each HBS having a base portion that is capable of being fitted into a power source socket and a communication module which is capable of transmitting to a remote wireless terminal.6. The system of claim 5 , wherein the communication module communicates to the remote wireless terminal(s) in at least one communication standard of the group consisting of: microwave and millimeter wave ...

OBJECT MANAGEMENT AND VISUALIZATION USING A COMPUTING DEVICE

Presenting thumbnails of visual objects using a data processing system includes determining, using a processor, aspect ratios for a plurality of visual objects and associating, using the processor, each of the plurality of visual objects with a thumbnail size selected from a plurality of predetermined thumbnail sizes based upon the aspect ratio of the visual object. A determination is made whether a visual feature is detected within the plurality of visual objects. A layout for displaying thumbnails of the plurality of visual objects is generated using the processor based on chronological order of the visual objects, detection of the visible feature, and the thumbnail sizes associated with the visual objects. Using a screen and the processor, the thumbnails are displayed according to the layout.

SYSTEM AND METHOD FOR DETECTING NUMBER OF LAYERS OF A FEW-LAYER GRAPHENE

Provided are a system and a method for detecting a number of layers of few-layer graphene employing multispectral image reproduction process to provide rapid detection of numbers of layers of few-layer graphenes on transparent or non-transparent substrates. The application of the system and method in relevant industries expedites validation and/or verification of the number of layers of an FLG product and improves the quality control efficiency thereof. 1. A system for detecting a number of layers of a few-layer graphene (FLG) , the system comprising:a visualization module comprising a structure for holding and illuminating an FLG sample;an acquisition module comprising a structure for performing an optical observation on the FLG sample; anda reproduction module comprising a structure operably connected to the acquisition module for providing information of detection of the number of layers of the FLG.2. The system as claimed in claim 1 , whereinthe visualization module comprises a platform member and an illumination member;the illumination member comprises a structure selected from a group consisting of:a) a reflective structure projecting a light reflectively to the platform member;b) a beaming structure directly providing a light through the platform member; andc) a structure comprising both the reflective structure and the beaming structure and capable of switching between the reflective and beaming structures.3. The system as claimed in claim 2 , whereinthe visualization module further comprises a magnification member comprising a structure for magnifying an image of the FLG sample held by the platform member.4. The system as claimed in claim 3 , wherein a charge-coupled device (hereinafter “CCD”) member receiving the image magnified by the magnification member;', 'a lens member operably connected to the CCD member for focusing the magnified image at the CCD member to provide a focused magnified image; and', 'a capturing member operably connected to the CCD ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm. 1. A light-emitting device , comprising: a light-emitting stack comprising a plurality of outermost side surfaces;', 'a first electrical contact and a second electrical contact, arranged under the light-emitting stack; and', 'an adhesion enhancing layer surrounding the plurality of outermost side surfaces and comprising an oxide; and, 'a light-emitting element, having a topmost surface and a bottom surface, and comprisinga covering layer, covering the light-emitting element and contacting the adhesion enhancing layer,wherein the adhesion enhancing layer has a thickness greater than 5 nm and less than 1000 nm, andwherein the adhesion enhancing layer is devoid of covering the bottom surface between the first electrical contact and the second electrical contact.2. The light-emitting device according to claim 1 , wherein a total contact area is defined as a total area that the covering layer contacts the light-emitting element claim 1 , an enhanced contact area is defined as a total area that the covering layer contacts the adhesion enhancing layer claim 1 , a ratio of the enhanced contact area to the total contact area is in the range of 0.25 and 0.6.3. The light-emitting device of claim 1 , wherein the adhesion enhancing layer has a refractive index greater than 1.90 at a peak wavelength of about 400 nm to 490 nm.4. The light-emitting device of claim 1 , wherein the light-emitting device is connected to the covering layer by an adhesion strength not less than 96774 g/cm.5. The ...

NON-VOLATILE MEMORY AND OPERATING METHOD THEREOF

An operating method of a non-volatile memory includes: generating a first programming pulse with a first time period to a target memory cell in a memory array; reading and verifying whether a threshold voltage of the target memory cell reaches a target voltage level; and generating a second programming pulse with a second time period to the target memory cell when the threshold voltage of the target memory cell does not reach the target voltage level, wherein the second time period is longer than the first time period. 1. A non-volatile memory , comprising:a memory array, comprising a plurality of memory cells, each of the plurality of memory cells has an adjustable threshold voltage;a voltage generator, coupled to the memory array, configured to generate a programming voltage to perform a programming operation to a target memory cell in the memory array, the programming operation configured to arrange the threshold voltage of the target memory cell; and control the voltage generator to generate a first programming pulse of the programming voltage with a first time period to the target memory cell;', 'read and verify whether a threshold voltage of the target memory cell reaches a target voltage level; and', 'control the voltage generator to generate a second programming pulse of the programming voltage with a second time period to the target memory cell when the threshold voltage of the target memory cell does not reach the target voltage level, wherein the second time period is longer than the first time period., 'a read-write controller, coupled to the voltage generator, the read-write controller configured to2. The non-volatile memory of claim 1 , wherein the first programming pulse generated by the voltage generator controlled by the read-write controller has a first voltage level claim 1 , the second programming pulse generated by the voltage generator controlled by the read-write controller has a second voltage level claim 1 , and the second voltage level is ...

Gesture recognition system having machine-learning accelerator

A gesture recognition system includes a Frequency modulated continuous waveform radar system. First and second channels of the signal reflected by the object are preprocessed and respectively sent to first and second feature map generators. A machine-learning accelerator is configured to receive output from the first and second feature map generators and form frames fed to a deep neural network realized with a hardware processor array for gesture recognition. A memory stores a compressed set of weights as fixed-point, low rank matrices that are directly treated as weights of the deep neural network during inference. 1. A gesture recognition system having machine-learning accelerator comprising: a transmitter for transmitting signal to an object; and', 'at least one receiver for receiving the signal reflected by the object;, 'a Frequency modulated continuous waveform radar system comprisinga machine-learning accelerator configured to receive processed output from the at least one receiver and form frames fed for inference to a deep neural network realized with a hardware processor array for gesture recognition; and{'figref': [{'@idref': 'DRAWINGS', 'FIG. 2'}, {'@idref': 'DRAWINGS', 'FIG. 3'}, {'@idref': 'DRAWINGS', 'FIG. 4'}], 'a memory comprising a set of compressed weights utilized by the deep neural network during the inference, the set of compressed weights generated by training another deep neural network on a remote server to recognize mini-gestures or micro-gestures of at least one of , , and .'}2. The gesture recognition system of further comprising a machine learning hardware accelerator scheduler configured to act as an interface between the hardware processor array and a microcontroller unit.3. The gesture recognition system of wherein the set of compressed weights is stored in a compressed form as fixed-point claim 1 , low rank matrices that are directly treated as weights during inference.4. The gesture recognition system of wherein the set of compressed ...

Film, method for manufacturing the film and masking method using the film

A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided.

Copolymers and their use as contrast agents in magnetic resonance imaging and in other applications

Novel compounds having use as contrast agents in magnetic resonance imaging, as well as other uses, are described. The compounds are comprised of a copolymer which comprises at least two of a first monomer of the formula X 1 --(CHR 2 CHR 2 --Y) n --(CHR 2 ) m --CHR 2 CHR 2 --X 2 , wherein X 1 and X 2 are, independently, OH, NH 2 , NHR 1 , COOH, COOR 1 , SH, or Z, Y is O, NH, NR 1 , S, or CO, n is 0-10,000, m is 0 or 1, each Z is, independently, Cl, Br, or I, each R 1 is, independently, a C 1 -C 20 substituted alkyl or cycloalkyl, and each R 2 is, independently, H or OH, and at least one of a second monomer which is a polynitrilo chelating agent having at least two COOH, COOR 1 , or COZ groups, the first and second monomers being bound to one another to form a copolymer through an ester, amide, or carboxylic thioester linkage of at least one of the OH, NH 2 , NHR 1 , COOH, COOR 1 , SH or Z groups of the first monomer, and at least one of the COOH, COOR 1 , or COZ groups of the second monomer. Optionally, the copolymer may also include at least one of a third monomer which is a targeting agent or a targeting agent ligand having an OH, NH 2 , NHR 1 , COOH, COOR 1 , SH, or COZ group, wherein R 1 is described as above, and wherein the third monomer is also bound with the first and second monomers to form a copolymer through an ester, amide, or carboxylic thioester linkage. For magnetic resonance imaging, for example, the copolymer may further comprise a paramagnetic ion chelated to the chelating agent.

Methods of preparing gas-filled liposomes

Methods of and apparatus for preparing gas-filled liposomes are described. Gas-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Therapeutic drug delivery systems

Therapeutic drug delivery systems comprising gas-filled microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic drug delivery applications are also provided. Drug delivery systems comprising gas-filled liposomes having encapsulated therein a drug are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in drug delivery applications are also disclosed.

Method of preparing gas and gaseous precursor-filled microspheres

Methods of and apparatus for preparing temperature activated gaseous precursor-filled liposomes are described. Gaseous precursor-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Gas filled liposomes and stabilized gas bubbles and their use as ultrasonic contrast agents

Contrast agents for ultrasonic imaging comprising gas filled liposomes prepared using vacuum drying gas instillation methods, and gas filled liposomes substantially devoid of liquid in the interior thereof, are described. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in ultrasonic imaging applications are also disclosed. Also described are diagnostic kits for ultrasonic imaging which include the subject contrast agents.

Cationic lipids and the use thereof

Cationic lipid compounds which comprise at least two cationic groups. The cationic lipid compounds are particularly suitable for use as carriers in the intracellular delivery of bioactive agents, including pharmaceuticals and genetic material. Compositions of the present cationic lipid compounds include suspensions, emulsions, micelles and liposomes.

Methods of preparing gas-filled liposomes

Methods of and apparatus for preparing gas-filled liposomes are described. Gas-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Methods of preparing gas-filled liposomes

Methods of and apparatus for preparing gas-filled liposomes are described. Gas-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Therapeutic drug delivery systems

Therapeutic drug delivery systems comprising gas-filled microspheres comprising a therapeutic are described. Methods for employing such microspheres in therapeutic drug delivery applications are also provided. Drug delivery systems comprising gas-filled liposomes having encapsulated therein a drug are preferred. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in drug delivery applications are also disclosed.

Methods of preparing gas and gaseous precursor-filled microspheres

Methods of and apparatus for preparing temperature activated gaseous precursor-filled liposomes are described. Gaseous precursor-filled liposomes prepared by these methods are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Copolymers and their use as contrast agents in magnetic resonance imaging and in other applications

Novel compounds having use as contrast agents in magnetic resonance imaging, as well as other uses, are described. The compounds are comprised of a copolymer which comprises at least two of a first monomer of the formula X 1 --(CHR 2 CHR 2 -Y) n -(CHR 2 ) m --CHR 2 CHR 2 13 X 2 , wherein X 1 and X 2 are, independently, OH, NH 2 , NHR 1 , COOH, COOR 1 , SH, or Z, Y is O, NH, NR 1 , S, or CO, n is 0-10,000, m is 0 or 1, each Z is, independently, Cl, Br, or I, each R 1 is, independently, a C 1 -C 20 substituted alkyl or cycloalkyl, and each R 2 is, independently, H or OH, and at least one of a second monomer which is a polynitrilo chelating agent having at least two COOH, COOR 1 , or COZ groups, the first and second monomers being bound to one another to form a copolymer through an ester, amide, or carboxylic thioester linkage of at least one of the OH, NH 2 , NHR 1 , COOH, COOR.sub. 1, SH or Z groups of the first monomer, and at least one of the COOH, COOR 1 , or COZ groups of the second monomer. Optionally, the copolymer may also include at least one of a third monomer which is a targeting agent or a targeting agent ligand having an OH, NH 2 , NHR 1 , COOH, COOR 1 , SH, or COZ group, wherein R 1 is described as above, and wherein the third monomer is also bound with the first and second monomers to form a copolymer through an ester, amide, or carboxylic thioester linkage. For magnetic resonance imaging, for example, the copolymer may further comprise a paramagnetic ion chelated to the chelating agent.

Cationic lipids and the use thereof

Cationic lipid compounds which comprise at least two cationic groups. The cationic lipid compounds are particularly suitable for use as carriers in the intracellular delivery of bioactive agents, including pharmaceuticals and genetic material. Compositions of the present cationic lipid compounds include suspensions, emulsions, micelles and liposomes.

Gas filled liposomes and their use as ultrasonic contrast agents

Contrast agents for ultrasonic imaging comprising gas filled liposomes prepared using vacuum drying gas instillation methods, and gas filled liposomes substantially devoid of liquid in the interior thereof, are described. Methods of and apparatus for preparing such liposomes and methods for employing such liposomes in ultrasonic imaging applications are also disclosed. Also described are diagnostic kits for ultrasonic imaging which include the subject contrast agents.

Method of preparing gas-filled microspheres using a lyophilized lipids

Lyophilized lipid compositions, as well as methods for their preparation, are embodied by the present invention. Gas-filled microspheres prepared using the lyophilized lipid composition are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

World band radio frequency front end module, system and method of power sensing thereof

The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. A power amplifier module has a forward power (FP) sensor and a reflective power (RP) sensor. A Voltage Standing Wave Ratio (VSWR) Processing Control Circuit (VPCC) is configured to tune the matching antenna for optimal radio frequency operation and protect the power amplifier in conjunction with the power amplifier protection controller. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. The module may also include a thermal protection system capable of effecting operation of the broadband power amplifier.

Situational lighting implement based on midi coding and controlling method for the same

Method of preparing fluorinated gas microspheres

Lyophilized lipid compositions, as well as methods for their preparation, are embodied by the present invention. Gas-filled microspheres prepared using the lyophilized lipid composition are particularly useful, for example, in ultrasonic imaging applications and in therapeutic drug delivery systems.

Liposomes filled with gaseous precursor

Housing of electronic device and method for making same

Cover for electronic device and method mannifacture same

一種電子裝置外殼包括本體及第一圖案層，該第一圖案層固接於該本體之表面上，該本體之表面包括平面及與該平面連接之凹面，該第一圖案層包括固接於該平面上之第一圖案及固接於該凹面上之第二圖案。本發明還提供一種製造上述電子裝置外殼之製造方法。

Handy base station system, device and method

A Handy Base Station (HBS) which is capable of connecting through a base portion into a power socket (e.g., lamp socket). The HBS may have a plurality of functional modules capable of being detachably mounted in a housing. One of the functional modules may be a light emitter such as a light emitting diode (LED). Another rmodule may be a communication module which may communicate using a wire line or wirelessly using standard wireless communication protocols. Further disclosed is a combination unit which has the HBS located on a pole such as a utility pole with a landing pad for an unmanned aerial vehicle (UAV) to allow the UAV a recharging location between deliveries and to allow the HBS to guide the UAV on its flight.

Novel targeted compositions for diagnostic and therapeutic use

Novel targeted compositions which may be used for diagnostic and therapeutic use. The compositions may comprise a lipid, a protein or a polymer and a gas, in combination with a targeting ligand. The targeting ligand targets tissues, cells or receptors, including myocardial cells, endothelial cells, epithelial cells, tumor cells and the glycoprotein GPIIbIIIa receptor. The contrast media can be used in conjunction with diagnostic imaging, such as ultrasound, as well as therapeutic applications, such as therapeutic ultrasound.

Hybrid magnetic resonance contrast agents

Novel MRI contrast agents that comprise one or more metal-ion chelates in juxtaposition with one or more free-radical nitroxide compounds in a polymeric or oligomeric molecule. Both the chelate units and the free radical units may, independently, be inside the main chain of the polymer or in a side chain of the linkage portion of the polymer. The number of combined units of chelates and free radicals in the polymer or oligomer is at least two.

Glass article and method for making same

本發明提供一種玻璃件，包括一具有三維形狀的玻璃本體，該玻璃本體包括一外表面，該外表面上形成有凹槽，該外表面包括曲面部，所述凹槽形成於該曲面部上，該玻璃件還包括嵌件，所述嵌件設置於所述凹槽內。本發明還提供一種上述玻璃件的製作方法。

Flash memory and manufacturing method and operating method thereof

A flash memory and a manufacturing method and an operating method thereof are provided. The flash memory includes a substrate, a charge-trapping structure, a first gate, a second gate, a third gate, a first doped region and a second doped region. The substrate has a protrusion portion. The charge-trapping structure is disposed over the substrate. The first gate and the second gate are disposed respectively over the charge-trapping structure at two sides of the protrusion portion. The top surfaces of the first gate and the second gate are lower than the top surface of the charge-trapping structure located on the top of the protrusion portion. The third gate is disposed over the charge-trapping structure located on the top of the protrusion portion. The first doped region and the second doped region are disposed respectively in the substrate at two sides of the protrusion portion.

System and method for the detection of the number of graphene layers

Electrical connector with foolproof function

Hybrid magnetic resonance contrast agents

Novel MRI contrast agents that comprise one or more metal-ion chelates in juxtaposition with one or more free-radical nitroxide compounds in a polymeric or oligomeric molecule. Both the chelate units and the free radical units may, independently, be inside the main chain of the polymer or in a side chain of the linkage portion of the polymer. The number of combined units of chelates and free radicals in the polymer or oligomer is at least two.

Wave-eliminating wheel of lane rope

Multi-party conference system and method based on network pseudo codes

一種基於網路虛擬碼提供多方會談系統及其方法，用於滿足需緊急召集會議時的關鍵訴求，包含主席可隨時隨地迅速召集會議，使用者(主席及與會者)操作方式極為便捷，會議主席只須預先設定好與會者成員電話號碼，當發生緊急事件需要立即召開會議時，主席只要撥打會議專屬網路虛擬碼即可立即召開緊急會議。本發明主要包括流程控制單元、服務設定及操作單元、資料儲存單元、訊號控制單元、以及多方會談多媒體單元，藉此，可提供使用者一種基於網路虛擬碼提供多方會談之服務。

Novel cationic lipids and the use thereof

Cationic lipid compound which comprise at least two cationic groups. The cationic lipid compound are particularly suitable for use as carriers in the intracellular delivery of bioactive agents, including pharmaceuticals and genetic material. Compositions of the present cationic lipid compounds include suspensions, micelles and liposomes.

Copolymers and their use as contrast agents in magnetic resonance imaging and in other applications