LIGHT-EMITTING DEVICE

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V. 1. A light-emitting device , comprising:a substrate;a semiconductor structure formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the substrate comprises an exposed surface not covered by the semiconductor structure;a part penetrating the second semiconductor layer and the active layer to expose a first surface of the first semiconductor layer;a first electrode formed on the part, extending from the exposed surface of the substrate, along the first surface of the first semiconductor layer and an outside wall of the second semiconductor layer to overlap the second semiconductor layer; anda second electrode formed on the second semiconductor layer, wherein the first electrode and the second electrode are separated apart by a distance smaller than 50 μm.2. The light-emitting device according to claim 1 , wherein the second electrode is surrounded by the first ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V. 1. A light-emitting device , comprising:a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer;a first electrode formed in the via and on the second semiconductor layer;a second electrode formed on the second semiconductor layer; anda third insulating structure covering the first electrode, the second electrode and the semiconductor structure, the third insulating structure comprising a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively comprises a metal layer contacting the third insulating structure, the metal layer comprises a material comprising a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger ...

LIGHT-EMITTING DEVICE

A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm. 1. A light-emitting device , comprising: a light-emitting stack comprising a plurality of outermost side surfaces;', 'a first electrical contact and a second electrical contact, arranged under the light-emitting stack; and', 'an adhesion enhancing layer surrounding the plurality of outermost side surfaces and comprising an oxide; and, 'a light-emitting element, having a topmost surface and a bottom surface, and comprisinga covering layer, covering the light-emitting element and contacting the adhesion enhancing layer,wherein the adhesion enhancing layer has a thickness greater than 5 nm and less than 1000 nm, andwherein the adhesion enhancing layer is devoid of covering the bottom surface between the first electrical contact and the second electrical contact.2. The light-emitting device according to claim 1 , wherein a total contact area is defined as a total area that the covering layer contacts the light-emitting element claim 1 , an enhanced contact area is defined as a total area that the covering layer contacts the adhesion enhancing layer claim 1 , a ratio of the enhanced contact area to the total contact area is in the range of 0.25 and 0.6.3. The light-emitting device of claim 1 , wherein the adhesion enhancing layer has a refractive index greater than 1.90 at a peak wavelength of about 400 nm to 490 nm.4. The light-emitting device of claim 1 , wherein the light-emitting device is connected to the covering layer by an adhesion strength not less than 96774 g/cm.5. The ...

Electrical connector with foolproof function

垂直度與平行度檢測系統及其檢測方法

一種垂直度與平行度檢測系統及其檢測方法，該系統包含一光源單元、至少一垂直反射菱鏡裝置、一第一位置感測器、一第二位置感測器及一第三位置感測器，其中第一位置感測器係設於一第一移動軸之第一移動件上，而第二位置感測器及一第三位置感測器分別架設於一第二移動軸與第三移動軸之移動件上，藉此，可透過將第一位置感測器架設於第一移動軸上，進行第一移動軸檢測，然後利用光路設計使垂直反射菱鏡裝置打出一道垂直第一移動軸之光路，再將第二位置感測器架設於第二移動軸上，並檢測、計算第一移動軸與第二移動軸之角度誤差，而可獲得垂直度，且當另一垂直反射菱鏡裝置上射出另一道平行前述第二移動軸之光路，並將第三位置感測器設在該第三移動軸，檢測該兩待測軸間的角度誤差可獲得平行度。

Terminal and connector of electronic cards

Card edge connector

Touch display device

A touch display device, including a substrate and multiple light-emitting units bonded to the substrate, is provided. Each of the multiple light-emitting units includes at least one light-emitting element. A first light-emitting unit of the multiple light-emitting units includes at least one sensing element. In the first light-emitting unit, the at least one sensing element is located between the at least one light-emitting element and the substrate. The orthographic projection of the at least one sensing element on the substrate overlaps the orthographic projection of the at least one light-emitting element on the substrate.

Receiving device of electrical wire

Electrical connecter assembly

Electronic card connector

覆晶式ｌｅｄ晶片

Light-emitting device

A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm.