09-04-2020 дата публикации
Номер: US20200109085A1
Принадлежит:
The present invention relates to structure including an interfacial seal between a glass-ceramic component and a metal component, as well as methods for forming such structures. In particular embodiments, the interfacial seal includes a metal oxide. Such interfacial seals can be beneficial for, e.g., hermetic seals between a glass-ceramic component and a metal component. 1. A method comprising:{'sub': 2', '2', '2', '3', '2', '2', '5', '2', '3, 'providing a glass-ceramic component configured to provide a glass-ceramic composition comprising of from about 65 wt. % to about 80 wt. % of SiO; from about 8 wt. % to about 16 wt. % of LiO; from about 2 wt. % to about 8 wt. % of AlO; from about 1 wt. % to about 8 wt. % of KO; from about 1 wt. % to about 5 wt. % of PO; from about 0.5 wt. % to about 7 wt. % of BO; from 0 wt. % to about 5 wt. % of ZnO; and from about 0.5 wt. % to about 5 wt. % of one or more metal oxidants;'}providing a metal component, wherein the glass-ceramic component is contacted with a portion of the metal component;{'sub': '1', 'heating the glass-ceramic component and metal component to a first temperature Tof from about 900° C. to about 1050° C.;'}{'sub': '2', 'initially cooling to a second temperature Tof from about 400° C. to about 750° C.; and'}{'sub': '4', 'further cooling the mixture to a fourth temperature Tof from about 10° C. to about 500° C., thereby forming an interfacial seal between the glass-ceramic component and the metal component.'}2. The method of claim 1 , wherein the heating step comprises rapidly cooling at a rate rgreater than about 30° C./minute to a second temperature Tof from about 400° C. to about 750° C. claim 1 , thereby minimizing formation of a cristobalite SiOphase within the glass-ceramic composition.3. The method of claim 1 , further comprising claim 1 , after the initially cooling step:{'sub': 3', '2, 'reheating the mixture to a third temperature Tof from about 750° C. to about 850° C., thereby facilitating formation of ...
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