03-02-2022 дата публикации
Номер: US20220035247A1
This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer. 18.-. (canceled)9. A patterning structure , comprising:a substrate comprising a partially fabricated semiconductor device film stack;a radiation-sensitive imaging layer disposed over the substrate; andan underlayer disposed between the substrate and the imaging layer,wherein the underlayer comprises a vapor deposited film of hydronated carbon doped with oxygen (O), silicon (Si), nitrogen (N), tungsten (W), boron (B), iodine (I), chlorine (Cl), or a combination of two or more of any of these, andwherein the film has a thickness of no more than about 25 nm or a thickness of about 2 to 20 nm.10. The patterning structure of claim 9 , wherein the substrate further comprises an optionally doped amorphous carbon hardmask disposed thereon.11. The patterning structure of claim 9 , wherein the underlayer comprises 0-30 atomic % oxygen (O) and/or about 20-50 atomic % hydrogen (H); and/or wherein a surface of the underlayer comprises hydroxyl groups claim 9 , carboxyl groups claim 9 , peroxy groups claim 9 , spcarbons claim 9 , sp carbons claim 9 , and/or unsaturated carbon-containing bonds.12. A method of making a patterning structure claim 9 , comprising:providing a substrate;depositing an underlayer on the substrate, wherein the underlayer is configured to increase adhesion between the substrate and the photoresist and/or reduce radiation dose for effective photoresist exposure; andforming a radiation-sensitive imaging layer on the underlayer, whereinthe substrate is a partially fabricated semiconductor device film stack;the substrate further comprises or is a hardmask, amorphous carbon film, amorphous hydrogenated carbon film, silicon oxide film, silicon nitride film, silicon oxynitride ...
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