Image forming apparatus

According to the Figure in detail to the preferred embodiments of the present invention.

(General example)

First of all with reference to Figure 1 of the present invention in one general embodiment.

Figure 1 is a a cross-sectional view of said Image forming apparatus of the present invention.

Figure 1 in, the Image forming apparatus includes a plurality of and formed with a back plate of the electron emission device (substrate) 101, is formed on a the fluorescence 111 of the panel 112, is arranged on the panel 112 and the back plate 101 to determine the potential between the electrode 105, is arranged in the back plate 101 and electric potential determining electrode 105 1st between the supporting member 104, and is arranged in the potential determining electrode 105 and the panel 112 2nd between the support member 113. 1st support member 104, potential-defining electrode 105 and the 2nd support member 113 and support each other in the back plate 101 and the panel 112 of the atmospheric pressure.

A plurality of electron-emitting device 102 is electrically connected to the row direction wiring electrodes 103 and column to the wiring electrode (not shown).

Potential determining electrode 105 is connected to the fixed voltage power supply 114.

Assuming that 1st support member 104 to the resistance of R1 (Ω), 2nd support member 104 to the resistance R2 (Ω), resistor R1 is larger than resistor R2 ten times or more, or better is 100 times or more.

The inventors have found that, the electric charge of the supporting member and projecting in the main spark discharge around the support member close to the part of the panel. Account of this and because of the electron from the electron-emitting device and the radiation of the fluorescence from the phosphor emitted by the secondary electron or ion relevant. According to the opinion of the inventor, by reducing the 2nd is installed on the panel side of the support member 113 to the sufficiently low the resistance of the the level of accumulation of the electric charge can be effectively prevented and the spark discharge.

Moreover, taking into account the 2nd support member from 113 the fact that the irregular noise, is fixed by the electric potential of the voltage determining electrode 105 is arranged in the 2nd support member 113 below. For adjusting the driving signal of the electron beam by a row and a column direction wiring electrode is applied to the electron emission device 102. With sufficiently large 1st of the resistance of the supporting member is arranged in the wiring electrode and the potential determining electrode 105 between, so that in the 2nd support member 113 is absorbed to the noise at a fixed voltage potential determining electrode 105 them. And, high-resistance 1st support member 104 is used as the effective insulating member.

Therefore, this structure can effectively prevent the regulating circuit from the 2nd support member 113 of the irregular noise, in, the regulating circuit thus prevent misoperation or damage due to the intrusion of noise. Moreover, regulating circuit will not increase the load on.

Moreover, this structure can effectively prevent the electronic emission device from the 2nd support member 113 the occurrence of irregular noise, thereby preventing operation of the electron-emitting device becomes unstable and the trouble of its service life is shortened.

And, because the 1st support member 104 has a large resistance value, is applied to the electron-emitting device will not be let out of the adjustment signal to the other electron-emitting device is caused by crosstalk.

In the present invention in the general embodiment, 1st support member 104 by the insulating material. 2nd supporting member 113 with the insulating material base 113b and a conductive thin-film 113a, the conductive thin film has a surface resistance 10⁵ (Ω / square) or more to 10¹³ (Ω / square) or relatively small, is better 10⁸ (Ω / square) or more to 10¹⁰ (Ω / square) or relatively small, the insulating material covers the conductive thin film 113a. This structure almost avoids the supporting piece 1st 104 electrostatic at all, and in the prevention of charge or spark discharge is reduced in the range of the 2nd support member 113 of the power consumption, and the advantage of having the above-mentioned.

Moreover, in the general embodiment, when the assumptions applied to the potential-defining electrode 105 to the voltage of Vc when (volts), the following expression is established:

0.2 × Q≤Vc≤ Q

Q=(Va-Vf)× (h+Tc/2)/ H

H: electron-emitting device and the interval between the accelerating electrode (mm)

H: 1st the height of the supporting piece (mm)

Tc: potential the thickness of the electrode is determined (mm)

Va: the voltage applied to the fluorescence (volts)

Vf: applied to the electron emission device of the maximum value of the driving voltage (volts)

If the relation is satisfied, is emitted from the electron-emitting device for electronic the use efficiency may be maintained at the actual range, and each can be obtained and the focusing of an electron beam in the above.

And then, 2nd support member 113 of a rectangular prismatic can make the 2nd support member 113 on the gradient of the electric potential becomes uniform. Therefore, because the installation of the 2nd support member 113 photoelectric caused by the impact can be reduced to the minimum, and in the 2nd support member 113 is on the electron beam trajectory and 2nd support member 113 can be the position of the orbit of the electron beam should be relative to each other. Therefore, in this invention 2nd support member 113 of a rectangular prismatic shape is advantageous.

The following will describe a preferred embodiment of the invention.

(1st embodiment)

According to fig. the 1-2, 9-11 and 13-19 description 1st embodiment.

First of all with reference to Figure 1 and 2 shows that the display panel of the display device of the basic structure. The electric potential of the supporting member and a detailed description of structure and method of manufacture.

Furthermore, will be with reference to Figure 13 and 14 indicate 2nd an ideal form of the support member.

Thereafter, will be with reference to Figure 9, 10 and 19 shows that the electron emission structure of the device, and manufacturing method for the characteristic.

Furthermore, will be with reference to Figure 11, 16 and 18 by the matrix wiring and structure of the electron emission device driving method of the multi-electron-beam source.

Finally, the reference fig. 15 shows that the structure of the circuit of the display device.

First of all, using Figure 1 and Figure 2 of the present invention describe the characteristic of the most characteristics. Figure 1 represents the section of the Image forming apparatus, and Figure 2 potential of the said part of the electrode is determined.

Figure 1 and 2 in, grade 101 said bottom substrate; 102 is the electronic emission device; 103 is used for electron emission device 102 provide a driving signal to the wiring electrode of the; 104 is a conductive thin film 113a 1st support member has covered by the insulating member; 105 is potential-defining electrode; 113 is used as the baffle of the supporting piece 2nd; 107 is used for connecting the partition board and the potential of the conductive bond electrode is determined; 108 is used for connecting the baffle of the conductive bond with the accelerating electrode; 109 is accelerating electrode; 110 is (black conductive material) [...] ; 111 is fluorescence ; 112 is panel; and 202 electronic through-holes.

Conductive connector 108 electrically connected to the partition plate 113 is formed on the surface of the conductive thin film 113a and accelerating electrode 109, and the conductive connector 107 electrically connected with the conductive thin film 113a and the potential determining electrode 105. Potential determining electrode 105 with an external power source 114 is electrically connected.

In the electron emission device 102 and accelerating voltage Va emission of electrons is applied to the accelerating electrode 109 time, attract impact fluorescence electronic is 111, thus causing fluorescence 111 light-emitting. At this time, from the external power source 114 of the fixed voltage is applied to make it weak current flow through the baffle 113 on the surface of the conductive thin film 113a.

Potential determining electrode 105 preferably is stable under the vacuum condition for resistance of electronic radiation is relatively stable, and has low resistance. As the potential determining electrode 105 material such as copper and nickel alloy, is an ideal. External application can be used conductive material and an insulating member.

As shown in Figure 2, according to the 1st embodiment of the potential determining electrode 105 is formed on the electron passing hole 202 of the electrode of the metal plate.

Electronic through-holes 202 according to the shape and the size of the selection of the imaging device. For example, electron passing hole 202 can be oval or polygonal and circular.

An external power source 114 can be according to the voltage of the selection of the imaging device, but also, the size of the electron beam and the position of the electron beam point can be adjusted according to the selected voltage.

The baffle 113 can only has a blocking potential determining electrode 105 and the accelerating electrode 109 of the high pressure that is applied between the insulation. Because of this reason, the insulating substrate 113b has covered the surface of the high resistance conductive film 113a.

As the insulating substrate 113b, such as quartz glass can be used, to reduce the impurity of natroncalk glass, and ceramic material such as alumina, and the like. Insulating substrate 113b preferably with close to the material of the insulating substrate 101 the thermal expansion coefficients of the material.

As for the conductive thin film 113a, in order to maintain the electric charge is prevented from being accumulated and spark discharge and in order to inhibit the consumption of current leakage, its surface resistance is preferably 10⁵ (Ω / square) or higher.

Moreover, the inventor finds that, the conductive thin film 113a surface resistivity is preferably 10¹³ (Ω / square) or lower, and for better 10⁸ to 10¹⁰ (Ω / square).

Conductive film 113a Pt the material can be, for example, Au, Ag, Rh, and Ir, metal mold, the state comprising island (island-state) granule group, by Al, Sb, Sn, Pb, Ga, Zn, In, Cd, cu, Ni, Co, Rh, Fe, Mn, Cr, V, Ti, Zr, Nb, Mo, and W alloy, such as and NiO, SnO₂ and ZnO conductive metal oxide.

Conductive film 113a by, for example, vacuum evaporation, chemical vapor deposition and splashes spreads vacuum film-forming method, a coating method, a coating method using rotary spreads through impregnating or applying to the substrate an organic solvent or dispersion solvent, and then sintering the applied paste, and the application of chemical reaction with the metal compound is formed on the surface of the insulating material coating nonelectrolytes of the metal. According to the material and its productivity selection of appropriate film forming method.

Conductive film 113a in the baffle 113 on the exposed part of the surface of the form.

The baffle 113 structure, used to be equipped with the baffle configuration and method, and panel 112 is electrically connected between the side and the potential determining electrode 105 is electrically connected between the side of the can be arbitrary, as long as the baffle 113 which is resistant to atmospheric pressure and sufficient tolerance ability of the resistance applied to the potential-defining electrode 105 and the accelerating electrode 109 between the insulation resistance of the high-pressure of, and the conductive thin film 113a has to prevent the partition plate 113 surface of the accumulation and the spark discharge of the electric charge can be.

Furthermore, the following will indicate the 2nd for firmly fixed (baffle) supporting member 113 and at the same time used for obtaining electrical connection of the support member of the conductive connector 107 and 108 of the material.

Conductive connector 107 and 108 by the best of the material to the sintering glass (frit glass) powder dispersing the conductive filler mixed with the adhesive and the conductive sintered glass paste. The conductive filler is through with the 5 to the 50 the glass ball or silica ball of natroncalk   m formed on the surface of the metal mold. Conductive connector 107 and 108 by applying and sintering the mixed paste form.

In this embodiment, support the baffle 113 and electrically connected with the conductive thin film 113a and the potential determining electrode 105 of the conductive connector 107, supporting panel and 112 and the partition plate 113 and electrically connected to the accelerating electrode 109 and the conductive thin film 113a of the conductive connector 108 is the conductive sintered by applying and sintering the paste formed by applying the paste, the paste of the gold plating as a filler the sintering silica ball soda lime glass or a mixture of the glass. At this time, the average diameter of the soda lime glass for the 8  m. Natroncalk ball is by gold plating of the electrocoat. Specifically, a gold plating film is the 0.1   m of the thickness of the Ni-thin film with a 0.04 the Au   m thickness of the film. Conductive sintered glass paste it is through mixing with respect to the sintered glass powder is 30 wt % of the conductive filler, then added to the mixture of the adhesive and form.

In the potential determining electrode 105 side, the use of spreader conductive sintered glass paste is applied to a potential-defining electrode 105 on, this results in the formation of a conductive link 107 ; in the panel 112 side, the use of spreader conductive sintered glass paste is applied to a partition 113 on the end of, this results in the formation of a conductive connector 108 ; then, the rear plate 101 side, conductive connector 107 aligned to a wiring electrode 103 ; in the panel 112 side, conductive connector 108 aligned to a black conductive material ([...]), in the air and will them in the 400 to [...] 500 the sintering [...] ten minutes. This makes the potential determining electrode 105 and the panel 112 through the partition plate is fixed and connected, and the electrical connection between them. Note, in the potential determining electrode 105 is formed on one side of the conductive connector 107 time, conductive sintered glass paste is two times the amount of the side of the panel forming a conductive connector 108 is when, in order to absorb processing each partition 113 in the assembly and of the difference of the baffle 113 of the back plate in the form of the differential, and to enhance the strength of the installation. Because of the potential-determining electrode 105 of the conductive bond on 107 electronic track of the impact is not great, so during the manufacturing process of the device through the above-mentioned method for assembling productivity can be improved.

Is arranged in the potential determining electrode 105 as a 1st under insulating piece of the support member 104 is through the line to the wiring electrode 103 insulating sintered glass paste is applied to form.

Row direction wiring electrodes 103 and column to the wiring electrode (not shown) is through screen printing Ag (silver) paste ink, in the 110 [...] drying the printed Ag (silver) paste ink up to twenty minutes, the 550 the Ag sintering [...] has been drying of (silver) paste ink and form. The formed with a wiring electrode 300 the width of   m and 7 the thickness of   m. Row direction wiring electrodes 103 and respectively to the wiring electrode of the electrode is connected to the device (not shown).

The following note insulating member (1st supporting member) 104 thickness. Insulating member 104 must have a thickness in order to guarantee the row direction wiring electrodes 103 and electric potential determining electrode 105 of sufficient electrical insulation between. On the other hand, if the insulating member 104 is too thick, the insulating member 104 to increase the surface area of the, this may cause charge accumulation. Therefore, insulating member 104 is derived from the desired range of the thickness of the 1   m or more to the 500   m or below.

Insulating member 104 is applied with 10¹³ (Ω / cm) or more the resistivity of the formed of a material. The insulating member 104 to the electrical resistivity of 10¹² (Ω / cm) or more.

The following description is applied to the potential-defining electrode 105 voltage Vc, , in other words the power supply 114 of the output voltage.

To select the voltage Vc substantially the value of the electrode is determined so that even the potential existence of the orbit of the electron beam is not affected. For this purpose, the voltage is determined by the following equation:

Q=(Va-Vf)× (h+Tc/2)/ H... (1)

Va: accelerating voltage

Vf: used for the driving voltage of the electron emission device of the maximum value of the

H: accelerating electrode and the distance between the electron emission device (approximately equal to the panel 112 and the back plate 101 the distance between)

H: potential of the electron-emitting device and the length of the electrode is determined (approximately equal to the insulating member 104 thickness)

Tc:in the unit of mm the thickness of the electrode is determined the potential

However, even in a display within, the value H, the Tc h may also be related to the change of position. In this regard, if in the course of manufacturing process can be negligibly small difference, H on the basis of the design value, the calculated value with the Tc h Q is selected as a voltage Vc. If this difference is relatively large, the greater the difference, the more should be selected based on design values than H, Tc h of the calculated Q value is smaller as the value of the voltage Vc. H the actual value is smaller than the design values of h, if the applied voltage Vc is calculated on the basis of the design value the value of Q, the orbit of the electron beam by the basically affected by the application of the voltage Vc, this may make the quality of the Image is reduced. Note, if the selected value of Vc, fluorescence electronic may be whatever, then has reduced the electronic the use efficiency. Therefore, it would be desirable to limit set 0.2Q.

Furthermore, the value of Q to the value of the range of Vc are determined:

0.2 × Q≤Vc≤ Q... (2)

In the 1st embodiment, the conductive thin film 113a for the surface resistivity of the 10⁹ (Ω / square); applied to the potential-defining electrode 105 on a voltage of 300V; to calculate the voltage for 6kV; a rear plate 101 and the panel 112 H is the distance between the 4 mm; the rear plate 101 and electric potential determining electrode 105 h to the distance between the 90  m; potential determining electrode 105 Tc is the thickness of the can 300  m. Electron passing hole 202 is circular and the size of the hole the  250  m. Electron-emitting device to the driving voltage of 14 V.

In this embodiment, the conductive thin film 113a according to the vacuum evaporation method is by the purification of natroncalk glass partition plate 113 is formed on the surface of the nickel oxide thin film formed on the the.

Note, the purification of the thin film is nickel oxygen in argon/oxygen mixed atmosphere of nickel oxide in the sputtering target formed as. The spraying-based temperature is 250 the [...].

Therefore, the structure of embodiment can provide a stable air pressure has sufficient for the imaging device of the supporting structure, and this device prevents luminance non-uniformity and the color non-uniformity, so as to prevent the Image quality due to the reduce cross-talk.

That is to say, according to this embodiment, the conductive thin film 113a is on an insulating substrate, 113b formed on the surface of the, accelerating electrode 109 and potential determining electrode 105 is through the conductive thin film 113a electrically connected, and weak current through the conducting thin film 113a. This can prevent the conductive film 113a on the surface of the electron and ion the aggregation of reducing Image quality.

Furthermore, according to this embodiment, flows through the insulating substrate 113b formed on the surface of the conductive thin film 113a weak current (the current includes the irregular noise) through the potential-defining electrode 105 flows to an external power source 114. This makes the Image forming apparatus can prevent the transmitting device has a large number of electronic 102 and row direction wiring electrodes 103 the negative impact of the electron source.

That is to say, the substrate 101 and the partition plate 113 is formed on the surface of the conductive thin film 113a is in the potential determining electrode 105 is insulated, to the electrode through the is installed on the rear plate 101 as a 1st on the insulating piece of the support member 104 fixed voltage applied. Specifically, flow through the conductive film 113a through the weak current fixed voltage is applied to the potential-defining electrode 105 flows to the external power supply 114, but not the flow has an electron-emitting device 102 of the row direction wiring electrodes 101 and 103. Therefore, this prevents the drive electronic of the driving signal bias drift or make the bias voltage waveform becomes unstable weak current flow has a large number of electronic-transmitting device 102 and the row direction wiring electrodes 103 the question of the electron source.

Furthermore, will be with reference to Figure 13 and 14 used in this embodiment by having as an ideal form of a rectangular prism-shaped baffle 106 operation. Figure 13 and 14 in, digital 109 said accelerating electrode; 106A and 106B that is covered with a conductive film on the surface of a support member. Support 106A with cylindrical, and the supporting piece 106B has a parallelepiped shape. Label 105 said potential-defining electrode; 1905 bit line that; and 1906 typical of that emitted from the electron emission device of the trajectory of the electron.

The surface of the support member, in a weak current flowing through the surface of the electric potential of the trigger. The cylindrical support member 106A (Figure 13) of the case, the supporting piece 106A in the potential from its environment due to the application of the electric potential of the accelerating voltage of the offset, this causes the supporting element near bit line bent. This affected the supporting piece 106A in the vicinity of the trajectory of electrons, then the electron beam offset. On the other hand, in the parallelepipedal support 106B of the case (Figure 14), the electric potential in the environment with the support member 106B is nearly equal to the potential on the surface, this will not make the electron beam offset.

Therefore, in the 1st embodiment, as shown in Figure 14 the supporting member has the shape of a parallelepiped.

For 1st the following will describe the display of the embodiment of an electron-emitting device in the plate 102. The Image forming device the material of the electron-emitting device, the shape and the manufacturing method thereof is not limited. Therefore, any SCE-type electron emission device, FE-type electron emission device and MIM-type electron-emitting device can be used.

However, when the need of having a large screen display device, low price, in these cold cathode electron emission device SCE-type electron emission device is the best option. In FE-type electron emission device, because the gate emitter awl the relative position and shape of these components in the device have a great influence on the electron-emitting characteristics, therefore, need to be very high-precision manufacturing technology. This low-cost large display screen and for the purpose of the is disadvantageous. In the MIM type electron-emitting device, the thickness of the insulating layer and the upper electrode must be thinned and evenly. This for the above-mentioned purpose is also negative. SCE-type electron-emitting device can be a large display screen is easy to achieve low cost and relatively simple method for the purpose of manufacturing. The inventors have found that, in a SCE-type electron emission device, in particular, the electron emission portion or its peripheral component is composed of a fine particle film forming apparatus having the electron-emitting characteristics of the particularly excellent, and found that it can be easy to manufacture. Therefore, this kind of electron emission device is most suitable for high-brightness, large-screen Image display device of the multi-electron-beam source. Therefore, in the 1st embodiment in the display panel, the use of the electron emission portion or its peripheral component is composed of a fine-particle film forming the SCE-type electron emission device. First of all the better SCE-type electron emission device of the basic structure, manufacturing method and characteristic, and then with a single matrix wiring that of the electron emission device the structure of the multi-electron-beam source.

First note a flat SCE-type electron emission device.

Figure 9A and 9B-SCE is to provide flat of the basic structure of the electron-emitting device of a top and a cross-sectional view. In Figure 9A and 9B in, digital 901 said substrate; 902 and 903 said electrode; 904 said conductive thin film; 905 said electron emission portion.

A substrate 901, on which can be used such as through the condense splashes spreads SiO₂ thin film of the quartz glass and soda lime glass plates and the like reduce the impurity of the glass substrate of the glass, ceramic such as alumina, and the like.

Relative to each other the device electrode 902 and 903 from general of the material can be selected electrically conductive material, for example metal such as Ni, Cr, Au, Mo, W, Pt, Ti, Al, cu, and Pd, metal oxide such as RuO₂, alloy such as Pd-Ag, which is made of glass such as printed conductive member, such as transparent conductor In₂ O₃-SnO₂, such as polycrystalline silicon, and semiconductor.

Device electrode 902 and 903 interval between the L, the length of the device electrode, the conductive thin film 904 of the electron emission device according to the shape of the design to the use of. According to the device for the voltage applied between the electrodes, the spacing L between the device electrode is preferably several hundred angstroms to several hundred nano-between, and more preferably in several nanometers to tens of nano-between.

Note, the conductive thin film 904 and the device electrode 902 and 903 is not limited to the order of picture 9A and 9B in the order shown. For example, can be the conductive thin film 904, then the device electrode 902, device electrodes and 903 is condensed on the substrate 901 is.

In order to obtain good electron emission characteristic, the conductive thin film 904 preferably contains fine particles of the fine particle film. According to the thickness of the thin film of the device electrode 902 and 903 of the step coverage, device electrode 902 and 903 and between the the resistance of the process conditions used for forming the proper setting. This thickness is preferably several angstroms to several thousand angstroms, for better 10 angstroms to 500 angstroms, and the thin film resistor for 10⁵ to 10¹³ (Ω / square).

Conductive thin film 904 of the material may be a metal such as Pd, Ru, Ag, Au, Ti, In, cu, Cr, Fe, Zn, Sn, Ta, W and Pb, oxide such as PdO, SnO₂, In₂ O₃ and Sb₂ O₃, carboboride such as HfB₂, ZrB₂, LaB₆, CcB₆, YB₄, and, carbide such as TiC, ZrC, HfC, TaC, SiC and WC, nitride such as TiN, ZrN, and HfN, semiconductor such as Si and Ge, and carbon.

Note, fine-particle film is in a dispersion state or contact/overlapping state (including the island granule group) of a large number of fine particles. The diameter of the fine particles of several angstroms to several thousand angstroms, preferably 10 to 200 angstroms.

The electron emission portion 905 is, for example, with the conductive film 904 through a portion of the formed by energizing the high resistance in the form of a crack. Conductive thin film 904 can have a diameter of several angstroms to several hundred angstroms of the conductive fine particles. The conductive fine particles comprising a conductive thin film 904 a part of or all of the material. The electron emission portion 905 and its surrounding conductive thin film 904 can have carbon and/or carbides.

The following, step will indicate the SCE electron emission device.

Figure 10 is a cross-sectional view of said step-shaped SCE basic structure of the electron emission device.

A substrate 1001, device electrode 1004 and the electron emission portion 1005 are respectively using the above-mentioned those formed of the same material. A rack 1006 (used for electrode 1002 and 1003 and the height difference between) is formed by vapor evaporation, printing or splashes formed by the coating of the insulating material such as SiO₂ the composition. Rack 1006 has a thickness of several hundred angstroms to several angstroms, corresponding to the device electrode 1002 and 1003 l. interval between The thickness according to the manufacturing method, and applied to the voltage between the device electrode is properly set, preferably in several hundred angstroms to several angstroms.

Conductive film 1004 is that the device electrode 1002 and 1003 and rack 1006 in the device after forming the electrode 1002 and 1003 formed on. Note, the electron emission portion 1005 that the platform 1006 part represent the horizontal line of the on. The electron emission portion 1005 is not limited to the shape and position of this kind of structure, they can be correspondent to form the electron emission portion or the conditions of forming the above-mentioned change in the conditions.

Figure 19 shows that has Figure 10 the structure of the in the SCE-type electron-emitting device of the following three characteristics of : (1) if the applied to the electron emission device of the device voltage Vf exceeds the threshold value Vth, the emission current increase violent Ie; when the device voltage Vf in threshold value place or relatively low level, almost Ie emission current to the measurement. That is to say, on the electron-emitting device with an emission current of the non-linear threshold voltage value may clear emission characteristics ; (2) because the emission current of the device voltage monotonically increase, the emission current can be Ie by the device voltage Vf control ; (3) in the accelerating electrode premises can be the emission charge captured by a voltage applying time to control, because it depends on the time of the voltage applying device.

SCE-type electron-emitting device more than the operation preferably in a high vacuum atmosphere, for example 10^-6 Torr or higher, of.

The following description of a single matrix row of cloth as the SCE-type electron emission device of the structure of the multi-electron-beam source.

Figure 11 the said Figure the plane of the multi-electron-beam source. On the substrate in the device, as shown in Figure 10 is shown in the SCE-type electron emission device 102 are arranged in the wiring electrode line 103 and to the wiring electrode 1102 in a single matrix. In the row to the wiring electrode 103 and the column direction wiring electrode 1102 at the intersection of, the insulating layer is formed (not shown) in order to maintain electrical insulation.

The following will be with reference to Figure 16 to 18 in an Image display for the method of driving the multi-electron-beam source.

As graphics 9 illustrate the invention of the electron emission device with respect to the emission current Ie has the following basic characteristics. That is, as in Figure 19 of the illustrated, as one can clearly see, the electron emission is used for electron emission threshold value Vth (in this embodiment to 8V), and only when applying a voltage of greater than a threshold value Vth, in electron emission.

And then, the voltage of the the greater than a threshold value Vth, emission current Ie corresponding to the voltage change and change. Note, the threshold value Vth and the variable quantity of emission current Ie may be because the electronic transmitting device and method of manufacture of the structure change. However, in all cases, it should be understand that, when the pulse voltage is applied to the electron-emitting device, if the voltage value is equal to the threshold (8V) or less, the electron emission does not occur, at the same time, if the voltage value is greater than the threshold value, the electron beam is sent out.

Figure 16 shows that has the 6 row × 6 column in the matrix of the electron emission device of the electron beam source. In order to express, each device marked coordinates (X, Y), such as D (1, 1), D (1, 2) and D (6, 6).

Note, in order to express convenient, the display panel of the Image forming device of the pixel is 6 × 6 (m =n=6). However, the actual display panel has many more pixel.

In the Image display when driving the electron beam source, the Image is based on the row, that is, through as a-like unit parallel to the X axis of each row. In order to drive the corresponding to the Image of the electronic emission device 6, 0V voltage is applied to the corresponding to the row Dx1 to Dx6 of the display line in each of the terminal and, at the same time applied to the other terminals 7V voltage. With this synchronous operation, the modulation signal according to the display of the Image pattern applied to each of the terminals Dy1 to Dy6.

The following description Figure 17 the Image shown in the display.

Figure 18 the said display Image 17 in the 3rd row of the Image pattern, through the terminal Dx1 to Dx6 and Dy1 to Dy6 applied to the electron-beam source voltage value. D electron emission device (2, 3), D (3, 3,) and D (4, 3) (Figure 8 the black device in) receiving more than threshold voltage 8V the 14V voltage and emitting the electron beam. On the other hand, in addition to the three device for receiving electron-emitting device other than less than the threshold value voltage 8V of 7V voltage (picture crosscourt device) or 0V voltage (blank device), and these electron-emitting device is not emitting the electron beam.

Similarly, sequentially from the 1st row-based dual to the other of the row driving electron beam source, the Image frame of the Image on the display. This is in order to 60 frames/sec speed repeated, then the picture is not blazed displayed.

Although not described above, by changing, for example, applied to the electron-emitting device to display voltage pulse width of the classification.

The following will be with reference to Figure 15 illustrate a method of driving the above-mentioned Image forming apparatus.

Figure 15 is a block diagram, for based on the NTSC TV signal of standard TV display driver structure. Figure 15 in, the display panel 1701 as it is as above, and according to the above operation. A scanner 1702 scanning a display line. A controller 1703 to produce the input to the scanner 1702 signal. A shift register 1704 for each row according to the data shift. A line memory 1705 from the shift register 1704 input and his party data to the modulating signal generator 1707. A synchronous signal separator 1706 separating a synchronous signal from the NTSC signal.

The detailed description of Figure 15 the function of each device.

First of all, the display panel 1701 through the terminal Dox1 to Doxm and Doy1 to Doyn, terminal Hs Hv with the high-voltage terminal of an electrical connection with the outside. For non-interlaced (device n) driving the order matrix m×n scanning signal of the electron emission device applied to the is arranged in the display panel 1701 in the terminal of the electronic beam as of Dox1 to Doxm.

On the other hand, is used to control the selected by the scanning signal from the row of the electron emission device of the electron beam the output of the modulation signal is applied to the terminal Doy1 to Doyn. High-voltage terminal of a DC power supply must have Hv from a high fixed voltage, such as 5kV, used to output from the electron-emitting device in order to provide the energy of the electron beam excitation fluorescent member.

And then, from the power supply 114 of 300 (V) voltage applied to the electric potential through terminal Hs determining electrode 105.

The following illustrate scanner 1702.

Scanner 1702 m switching device a (fig. 15 is expressed as S1 to Sm), the device selects the output voltage of the DC power supply Vx or 0V (ground level) and the selected voltage and the display panel 1701 terminal Dox1 to Doxm connection. Switch device S1 from the controller-based to Sm 1703 Tscan operation of the control signal output. In fact, such as a FET switch by the combination device is easy to form the switch device.

Note, the direct current power source Vx is set to output 7V a fixed voltage, applied to the electron-emitting device so that the driving voltage of Vth is the threshold value or lower.

Controller 1703 regulating the operation of the device, so that the may be based on input from the external device the Image signal to a suitable display. According to the from the synchronization signal separator 1706 Tsync synchronous signal, controller 1703 to produce each control signal, Tscan, with Tsft Tmry supply each of the devices.

Synchronous signal separator 1706 is easy to use for processing input from the external device of the TV signal of the NTSC system synchronization signal component (filter) circuit. As known, by the synchronous signal separator 1706 the separated synchronous signal comprises vertical synchronous signal and horizontal synchronous signal, however, in order to express the Tsync synchronous signal expressed as the signal. Similarly, separated from the TV signal and is input to the shift register 1704 to express the luminance component signal DATA convenient expressed as.

Shift register 1704 from the controller-based 1703 Tsft to the control signal of the Image line-by-line Serial/parallel converting Serial input signal DATA. That is, the control signal a Tsft shift register 1704 the role of the shift clock.

For an Image row Serial/parallel conversion of the data from the shift register 1704 comprising n output as an input to memory Id1 Idn of the line memory 1705 signal.

Line memory 1705 maintain for one Image line data up to the necessary time period. According to the from controller 1703 Tmry the control signal, the memory properly maintain memory Id1 Idn of the signal. The stored I as the Image data of the content of the 'd1 to I' dn is output to the modulating signal generator 1707 them.

Modulation signal generator 1707 I according to the Image signal 'd1 to I' dn are respectively appropriate modulation of the electronic emission device. From the modulation signal generator 1707 by the terminals of the output signal of Doy1 to Doyn to the display panel 1701 the electron-emitting device.

(2nd embodiment)

Figure 3 according to the 2nd embodiment of the present invention-SCE of the imaging device of the electron emission device. This embodiment is different from that in the 1st embodiment, potential-defining electrode 105 as the 2nd support member only with the conductive thin film 113a covering the baffle 113 and row direction wiring electrodes 103 formed between. Because the other part is the same as the 1st embodiment, the description of these parts is omitted. Has been confirmed that the embodiment has the advantages of similar to the 1st embodiment.

(3rd embodiment)

Figure 4A according to the present invention said 3rd embodiment a perspective view of the simplified Image forming apparatus. Figure 4B and 64C representing basiscopic 4A linear A-A 'and B-B' a cross-sectional view of the. In these Figure, labels 401 said substrate; 404 expressed a column direction wiring electrode; 403 to the wiring electrode in the column said 404 on the formed insulating layer (not shown) of wiring electrode row; 405 said sintered glass insulating layer; and 402 each having the electron emission portion 412 of the electronic emission device. Electron emission device 402 through a connecting wire 406 and through the mesh plate (Au) paste ink printing gold row formed by the wiring electrode 403 and the column electrode to the wiring 404 is electrically connected. Grade 407 through the insulating layer 405 is arranged in the row to the wiring electrode 403 the potential on the electrode is determined. Different with the 1st embodiment, the electric potential of the embodiment determining electrode 407 is covered on each of the electron emission portion 412 above, and it has electron passing hole 408 (Figure 4C) so as not to hinder from the electron emission device 402 electron emission portion 412 the emitted electron beam. Moreover, the conducting film 411 covered by the insulating separator 410 is installed on the substrate 401 with the accelerating electrode 409 between. Because this embodiment of the Image forming device with the material of each component of the same as 1st embodiment, a description of these materials is omitted. In the 3rd embodiment, substrate 301 and the accelerating electrode 409 H is the interval between the 5 mm; the voltage between the device electrodes is added to 14 V. Potential determining electrode 407 has the 5   m and is arranged in the thickness of the electron emission device 402 on the 80 h   m at the height of, with the 220  m × 110 the rectangular   m electronic through-holes 408 set up from the electron emission portion 412 is mobile position above the 60 position of   m. Because the electron emission portion 402 is provided with the length of the shape of the 100 line   m, the size of the electron passing hole sufficient to make the electron beam through and not in conjunction with the potential determining electrode 407 collision. Note, when potential-defining electrode 407 is not present, the substrate 401 over the 80 (height h)  m position of a space voltage of 80 V.

In this embodiment, when the potential determining electrode 407 bear 15V when the voltage is reduced, to the accelerating electrode 409 of the electron beam radiation of the light spot diameter of about potential determining electrode 407 of the diameter of the the case of 60%, this with a high precision Image display is realized. When the 35V voltage applied to the potential-defining electrode 407 is on, the light point of the electron beam with a diameter of about 15 voltage is applied in place determining electrode 407 is the same as the diameter of the case, this obtains a more bright light point. At that time, 75V voltage applied to the potential-defining electrode 407 is on, the light spot diameter of the electron beam is about not set up the potential determining electrode 407 of the spot diameter in the case of 90%.

Because the potential determining electrode 407 is covered on the electron emission part 412 above, can be reduced in the electronic emitter ionic collisions caused by the damage of the part, as a result the service life of the electron-emitting device than the 1st embodiment of the device. In this embodiment, taking into account the diameter of the beam spot and the brightness of the light point, added to the potential determining electrode 407 is preferably the voltage on the 35 V.

(4th embodiment)

This embodiment is different from the embodiment of using the 1st flat FE-type electron emission device. Figure 12 shows the flat FE-type electron emission device plan view looking upward. Figure 12 in, digital 1201 expressed electron emission portion; 1202 and 1203 that the device electrode; 1204 said row direction wiring electrode; 1205 that a column direction wiring electrode. When the voltage is applied to the device electrode 1202 and 1203 is between, the electron emission portion 1201 the peak emission of electrons. The row wiring electrode 1205 is through form a trench on the substrate (not shown), using the blade in the groove to apply spreads Ag (silver) paste and formed by sintering the paste. Furthermore, an insulating layer is formed on the substrate (not shown) thereafter, through the similar to the 1st embodiment of the screen printing and to the wiring electrode the shape forms a line 1204. The row wiring electrode 1205 the thickness is 50 the  m; row direction wiring electrode 1204 the thickness of the the 60  m. The Image forming device with the other components is the same as in the 1st embodiment.

Moreover, for this embodiment's FE-type electron emission device electron emission portion 1201 has a high-melting-point metal or diamond.

Therefore, the embodiment can provide an Image forming apparatus, the device has the advantages of strong enough to resist atmospheric pressure a support structure, and to prevent the brightness is not uniform, uniform color, reduced Image quality due to cross talk, the spark discharge, and modulation circuit or a problem of deterioration of electron emission device.

(5th embodiment)

Figure 20 shows the application according to the 5th embodiment of the SCE-type electron emission device of the Image forming apparatus. In this embodiment, the row to the wiring electrode 2003 and column to the wiring electrode 2013 at the intersection of, by increasing the thickness of the wiring electrode forms the space 2014. Support member 2014 of the Image forming apparatus is improved in the manufacture process of the exhaust speed of exhaust process, and because of the improvement of the vacuum condition is obtained, and the service life of the device can be prolonged. In this embodiment, line to the wiring electrode 2003 to the thickness of the 50  m; row direction and a column direction wiring electrode to the thickness of the insulating layer between the 60  m; column direction wiring electrode 2013 the thickness of the can 80  m. Digital 2006 said electrically conductive support member; 2007 and 2008 said conductive connector.

In this embodiment, device substrate 2001 and accelerating electrode 2009 H is the interval between 6 mm; applied to the accelerating electrode 2009 for the accelerating voltage on 7kV; device substrate 2001 and a potential determination of plate 2005 to the distance between the 150  m; potential determination of plate 2005 the thickness of the can 300  m; applied to the potential-defining plate and 2005 voltage of 150 V. Image forming apparatus with the above-mentioned structure can be obtained, and the 1st embodiment of the same. Moreover, in the formation of such a device, the exhaust time is shortened 5%, relative to the other of the exhaust period of the imaging device and prolonging the service life of the device 10%. Note, the resistance value of the wiring electrode for 5 the small or more; wiring electrode 2003 and 2013 and potential determination of plate 2005 of the insulating layer between 2004 resistance to 10¹² Ω or more.

The following illustrate the invention of the 9th to 10th embodiment. These embodiments 1st support member has the same (i.e., supporting in the potential determining electrode with the line to the part between wiring electrode) and the 2nd support member with conductivity.

Taking into account the charge accumulation and the spark discharge occurs at the supporting piece 1st to 2nd is not as good as the supporting member is frequent, electron emission device and modulation circuit should be the best by the 2nd is arranged far away from the supporting member is of the noise caused by, and 1st of the support member should be preferably the power consumption is saved, 1st limit of conductivity of the support member in a certain level. That is to say, the resistance of the supporting piece 1st 2nd support member is larger than the resistance of the large up to ten times or more. 1st the resistance of the supporting member is preferably 100 times or more.

Specifically, the resistance of the supporting member as a 1st (in other words, potential-defining electrode and the line to the resistance between the wiring electrode), the appropriate value is from 10⁷ (Ω) to 10¹¹ (Ω) of the range selection between.

As the 1st to the 5th embodiment of the support member used for 1st, of insulating material, the 6th embodiment similar to those of the 10th 1st the resistance of the supporting member is more than ten times the resistance of the 2nd support member. However, as in the 1st embodiment the, limit of insulating material for preventing the accumulation height of the supporting piece 1st. On the other hand, provide 6th 1st to 10th embodiment the resistivity of the supporting member, the electrical resistivity of such a limitation is reduced. 1st of the support member lifting height restriction, manufacturing precision can be improved. For example, comparison with the height of the 90  m (design value) error range is in the 10 the supporting piece and the   m with the height of the 900  m (design value) error in a range of 100 the support member   m, obviously, the latter can be easy to obtain. Because of the manufacturing precision is improved, is applied to the electric potential of the voltage on the electrode is determined can be set as a Vc close to the 1st embodiment of the equation (1) the calculated value.

(6th embodiment)

According to the 6th embodiment of the imaging device, many component corresponding to the 1st embodiment of the part of the display device. In order to avoid the complexity of the description, the description of the corresponding parts is omitted. For example, 2nd will be omitted of the preferred form of support, potential-defining electrode structure and the manufacturing method, the structure of the electron-emitting device, characteristics and manufacturing method, with matrix wiring of the electron emission device of the multi-electron-beam source structure and method of driving the same, the structure of the display unit.

The following will be with reference to Figure 1 shows that according to the 6th embodiment of the basic structure of the display device.

In this embodiment, supporting piece 1st 104 by the high resistance conductive material rather than insulating material, and have than 1st 1st embodiment of the thickness of the thickness of the supporting member. Potential determining electrode 105 installing height of h and from the power supply 114 is different from the output of the 1st embodiment of the voltage Vc.

Specifically, 1st support member 104 is formed from a low-melting-point glass; they have 900 the thickness of   m; resistance approximately 10¹⁰ (Ω). Note, 2nd support member 113 includes the same structure of the 1st embodiment, and has approximately 10⁸ (Ω) resistance.

Due to the increase of the thickness of the supporting piece 1st, so the potential determining electrode 105 h to increase the height of the location. 1st h almost the height of the support member 104 is the same as the thickness of the.

If equation h=0.9 (mm) into the equation (1), the

Q=1570 (V) Va=6000 (V) Vf=14 (V) Tc=0.3 (mm) H=4 (mm) 1st embodiment of the 6th embodiment of the comparison, the manufacturing of highly caused by the change of the error rate h can be reduced. Therefore, setting Vc=0.89 × Q=1400 (V).

Note, in the 1st embodiment, if h=0.09 (mm), on the basis of the equation (1) to obtain Q=360 (V). This kind of circumstances, to take into account the error of the height of the (rate) h is relatively large, setting Vc=0.83 × Q=300 (V).

With the setting as compared to the situation of 0.83 × Q, setting 0.89 × Q improve the use efficiency of the electron beam. That is to say, compared with the 1st embodiment, 6th embodiment of the display device with higher luminance display.

Moreover, the embodiment of the display device also can prevent problems such as the following: the Image quality due to the electric charge on the support member to reduce the, spark discharge, modulation error operation and the damage of the circuit, and the electron-emitting device is not stable operation and characteristic deterioration.

Note, by the 1st support member can be formed by different materials, as long as the structure has supporting member than 2nd the resistance of the resistance of large ten times or more. For example, can be used in with conductive film on the surface of the insulating substrate.

(7th embodiment)

7th embodiment of the present invention with many of them corresponding to the 2nd embodiment of the part of the structure, therefore, this embodiment use fig. 3 to explain the. 7th embodiment is different from embodiment 2nd, 1st support member 104 has conductivity. 1st support member 104 has the 900   m thickness and 10¹⁰ (Ω) resistance.

Moreover, the display device of the 7th embodiment can prevent problems such as the following: the Image quality due to the electric charge on the support member to reduce the, spark discharge, modulation error operation and the damage of the circuit, and the electron-emitting device is not stable operation and characteristic deterioration.

(8th embodiment)

8th embodiment of the present invention with many of these parts corresponding to the 3rd embodiment of the structure of the part of the, therefore, this embodiment using the picture 4A to 4C to explain the. 8th embodiment is different from the 3rd embodiment, 1st support member 405 has conductivity. 1st support member 405 has a 800 the thickness and   m 10⁹ (Ω) resistance.

Moreover, the display device of the 8th embodiment can prevent problems such as the following: the Image quality due to the electric charge on the support member to reduce the, spark discharge, modulation error operation and the damage of the circuit, and the electron-emitting device is not stable operation and characteristic deterioration.

(9th embodiment)

6th embodiment, as an electronic emission device 102, using the SCE-type electron emission device; in the 9th embodiment, using FE-type electron emission device.

In this embodiment the FE-type electron emission device showing in Figure 12 ;. Because the electronic transmitting device and the 4th embodiment of the device that is used in the same, a description of these devices will be omitted.

Moreover, the display device of the 9th embodiment can prevent problems such as the following: the Image quality due to the electric charge on the support member to reduce the, spark discharge, modulation error operation and the damage of the circuit, and the electron-emitting device is not stable operation and characteristic deterioration.

(10th embodiment)

10th embodiment of the present invention with many of the part corresponding to the part of the 5th the structure of the embodiment, therefore, this embodiment using the picture 20 to explain the. 10th embodiment is different from the 5th embodiment, supporting piece 1st 2004 has conductivity. 1st support 2004 with 900 the thickness and   m 10¹⁰ (Ω) resistance.

Because the space 2014 can than 5th embodiment of the space is large, than 5th exhaust the continuity of the further improved embodiment, the high vacuum condition (low pressure).

Moreover, the display device of the 8th embodiment can prevent problems such as the following: the Image quality due to the electric charge on the support member to reduce the, spark discharge, modulation error operation and the damage of the circuit, and the electron-emitting device is not stable operation and characteristic deterioration.

The invention is not limited to the above embodiment, and the spirit and scope of the present invention may be made in various variations and modifications. Therefore, in order to notice the scope of the invention, extra make the following claim.