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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 5984. Отображено 100.
31-05-2012 дата публикации

Elelctron emitter and electron emission element

Номер: US20120133266A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

The present disclosure provides an electron emitter. The electron emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks. The present disclosure also provides an electron emission element. The electron emission element comprises a conductive base and a carbon nanotube pipe. The carbon nanotube pipe includes a first end electrically connected with the conductive base and a second end opposite to the first end. The second end defines an opening and includes a plurality of tapered carbon nanotube bundles located around the opening.

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Номер записи: 1
31-05-2012 дата публикации

Method for making elelctron emitter

Номер: US20120135662A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

The present disclosure provides a method for making electron emitter includes the following steps. First, a linear support is provided. Second, at least one carbon nanotube film or at least one carbon nanotube wire is provided. Third, the at least one carbon nanotube film or wire is wrapped around the linear support. Fourth, the linear support is removed to obtain a carbon nanotube hollow cylinder. Fifth, the carbon nanotube hollow cylinder is fused.

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Номер записи: 2
07-06-2012 дата публикации

Carbon Nanotube Ink

Номер: US20120141678A1
Автор: Jan Sumerel
Принадлежит: Fujifilm Dimatix Inc

Carbon nanotube inkjet solutions and methods for jetting are described.

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Номер записи: 3
05-07-2012 дата публикации

Vacuum ionization gauge

Номер: US20120169347A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A vacuum ionization gauge includes a cold cathode, a shield electrode, an anode ring, and a collector. The shield electrode includes a receiving space. The anode ring is located in the receiving space of the shield electrode. The cold cathode includes a field emission unit and a grid electrode corresponding to the field emission unit. The field emission unit includes at least one emitter. Each of the at least one emitter includes a carbon nanotube pipe. The carbon nanotube pipe has a first end, a second end, and a main body connecting to the first end and the second end. The second end has a plurality of carbon nanotube peaks.

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Номер записи: 4
02-08-2012 дата публикации

Electron emitting body and x-ray emitting device

Номер: US20120194057A1
Автор: Masanori Haba, Ryouichi Suzuki, Yoshihisa Ishiguro
Принадлежит: Life Technology Research Institute Inc

Provided are an electron emitting body having a high electron beam density and an X-ray emitting device embedding the electron emitting body. The electron emitting body has a substrate, the surface of which forms a concave surface, and a carbon film comprising a large number of projections made of carbon and expanded two-dimensionally. The carbon crystal grows such that first a swell portion ( 22 ) gradually becomes larger and then a needle-like portion ( 23 ) grows from the head of the swell portion ( 22 ). The needle-like portion ( 23 ) has a graphene sheet obliquely wound therearound in a multi-layer fashion and has a hollow inside. The axis of a carbon projection ( 21 ) thus formed is substantially orthogonal to a line tangent to the concave surface ( 11 ), so that the axes of a plurality of the carbon projections ( 21 ) intersect with each other at the focal point (F) of the concave surface ( 11 ).

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Номер записи: 5
30-08-2012 дата публикации

Low voltage electron source with self aligned gate apertures, fabrication method thereof, and x-ray generator using the electron source

Номер: US20120219118A1
Автор: Zhidan Li Tolt
Принадлежит: Individual

An x-ray generating device includes at least a nano-structure based field emission electron source having a self-aligned gate aperture incorporated on a substrate. The device further includes at least an anode target. Associated fabrication method is also described.

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Номер записи: 6
06-09-2012 дата публикации

Electron beam source system and method

Номер: US20120223245A1
Автор: Jan P. Bennett, John Bennett, Mark Troll
Принадлежит: Individual

An embodiment includes an electron beam source system having a first electron beam source unit with a substrate having a substrate-top end and a substrate-bottom end; and a first lens coupled to the substrate-bottom end defining a first aperture and having a lens-top end and a lens-bottom end. Further embodiments comprise an electron-emission region at the substrate-bottom end and aligned with the first aperture, the electron-emission region being operable to emit one or more electrons due to one or more photons contacting the electron-emission region, which may include passing through the substrate and into the electron-emission region, wherein the electron-emission region comprises a first doped portion of the substrate.

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Номер записи: 7
29-11-2012 дата публикации

Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices

Номер: US20120301981A1
Автор: Lance OH, Mehmet Ozgur, Michael Huff, Michael Pedersen, Paul Sunal
Принадлежит: Corp for National Research Initiatives

The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

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Номер записи: 8
31-01-2013 дата публикации

Method for making cathode slurry

Номер: US20130029557A1
Автор: Jie Tang, Qi Cai, Shou-Shan Fan, Tong-Feng Gao
Принадлежит: Individual

A method for making cathode slurry is provided and includes the following steps. First, a number of electron emitters, an inorganic binder, and an organic carrier are provided. Second, the electron emitters, the inorganic binder, and the organic carrier are mixed to obtain a mixture. Third, the mixture is mechanically pressed and sheared.

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Номер записи: 9
09-05-2013 дата публикации

Particle sources and methods for manufacturing the same

Номер: US20130112138A1
Автор: Huarong LIU
Принадлежит: CETC 38 Research Institute

The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

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Номер записи: 10
30-05-2013 дата публикации

Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same

Номер: US20130134860A1
Автор: Wal Jun Kim, Yong Hyup Kim
Принадлежит: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

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Номер записи: 11
04-07-2013 дата публикации

Field emission device

Номер: US20130169156A1
Автор: Jordin T. Kare, Lowell L. Wood, JR., Nathan P. Myhrvold, Roderick A. Hyde, Tony S. Pan
Принадлежит: ELWHA LLC

A field emission device is configured as a heat engine.

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Номер записи: 12
08-08-2013 дата публикации

Field emission cathode

Номер: US20130200776A1
Автор: Qiu-Hong Hu
Принадлежит: LIGHTLAB SWEDEN AB

The present invention relates to afield emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures. Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

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Номер записи: 13
22-08-2013 дата публикации

Carbon nanotube field emission devices and methods of making same

Номер: US20130214244A1
Автор: Graham Sanborn, William Judson Ready
Принадлежит: Georgia Tech Research Corp

Devices and methods are described for a cathode having a plurality of apertures in an insulating layer, pits in a substrate layer, and emitters in the pit. The device can also have gate layer on top of the insulating layer which has an opening that is substantially aligned with the pit and the aperture. The emitter can be an array of substantially aligned carbon nanotubes. The device and method produces cathodes that are designed to avoid shorting of the cathode due to emitter-gate contact and other fabrication challenges.

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Номер записи: 14
26-09-2013 дата публикации

Field emission display and fabrication method thereof

Номер: US20130249382A1
Автор: Choonrae Lee, Hakwoong Kim
Принадлежит: SN Display Co Ltd

A field emission display (FED) and a fabrication method thereof are disclosed. A lower plate of the FED includes: a cathode electrode formed on the substrate; a diffusion blocking layer formed on the cathode electrode; a seed metal layer formed on the diffusion blocking layer; carbon nano-tubes (CNTs) grown as single crystals from the grains of the seed metal layer; a gate insulating layer formed on the substrate on which the cathode electrode, the diffusion blocking layer, and the seed metal layer are formed, in order to cover the CNTs; and a gate electrode formed on the gate insulating layer.

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Номер записи: 15
24-10-2013 дата публикации

Carbon nanotube field emission device with overhanging gate

Номер: US20130280830A1
Автор: Edward M. Luong, Harish Manohara, Michael J. Bronikowski, Risaku Toda
Принадлежит: California Institute of Technology CalTech

A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.

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Номер записи: 16
07-11-2013 дата публикации

Electron emission source, electric device using the same, and method of manufacturing the electron emission source

Номер: US20130295815A1
Автор: Cheol Jin Lee, Seung Il Jung
Принадлежит: Industry Academy Collaboration Foundation of Korea University

Provided are an electron emission source, a display apparatus using the same, an electronic device, and a method of manufacturing the display apparatus. The electron emission source includes a substrate, a cathode separately manufactured from the substrate, and a needle-shaped electron emission material layer, e.g., carbon nanotube (CNT) layer, fixed to the cathode by an adhesive layer. The CNT layer is formed by a suspension filtering method, and electron emission density is increased by a subsequent taping process on the electron emission material layer.

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Номер записи: 17
03-04-2014 дата публикации

Field emission device

Номер: US20140091716A1
Автор: Jordin T. Kare, Lowell L. Wood, JR., Nathan P. Myhrvold, Roderick A. Hyde, Tony S. Pan
Принадлежит: ELWHA LLC

A field emission device is configured as a heat engine.

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Номер записи: 18
04-01-2018 дата публикации

HIGH BRIGHTNESS BORON-CONTAINING ELECTRON BEAM EMITTERS FOR USE IN A VACUUM ENVIRONMENT

Номер: US20180005791A1
Автор: Delgado Gildardo R., Garcia Berrios Edgardo, Garcia Rudy, Hill Frances, Schultz William G.
Принадлежит:

An emitter containing a metal boride material has an at least partly rounded tip with a radius of 1 μm or less. An electric field can be applied to the emitter and an electron beam is generated from the emitter. To form the emitter, material is removed from a single crystal rod to form an emitter containing a metal boride material having a rounded tip with a radius of 1 μm or less. 1. An apparatus comprising:an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less.2. The apparatus of claim 1 , wherein the metal boride material includes a species selected from the list consisting of an alkali metal claim 1 , an alkaline earth metal claim 1 , a transition metal claim 1 , a lanthanide claim 1 , and an actinide.3. The apparatus of claim 1 , wherein the metal boride material is a metal hexaboride material.4. The apparatus of claim 1 , wherein the metal boride material includes LaB.5. The apparatus of claim 1 , wherein the emitter has an emitting area of less than 1 mm.6. The apparatus of claim 1 , wherein the metal boride material has a <100> crystal orientation.7. The apparatus of claim 1 , wherein the radius is 700 nm or less.8. The apparatus of claim 1 , wherein the radius is 450 nm or less.9. The apparatus of claim 1 , wherein the radius is 100 nm or less.10. The apparatus of claim 1 , wherein the at least partly rounded tip includes a flat emitting facet.11. The apparatus of claim 1 , wherein the emitter has an emitting area less than 1 μm.12. A method comprising:providing an emitter containing a metal boride material, wherein the emitter includes a frustoconical section with an at least partly rounded tip that is in the shape of a truncated sphere, and wherein the at least partly rounded tip has a radius to a curved outer surface of 1 μm or less; ...

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Номер записи: 19
04-01-2018 дата публикации

METHOD FOR MANUFACTURING A TRENCH CHANNEL FOR A VACUUM TRANSISTOR DEVICE AND VACUUM TRANSISTOR DEVICE

Номер: US20180005792A1
Автор: Digrazia Giuseppe, Fiumara Antonino, Frazzica Marcello
Принадлежит:

A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip. 1. A method for manufacturing a microelectronic semiconductor device comprising:forming a trench in a body, the trench having side walls, an opening, and a bottom; andforming a sacrificial layer completely filling of the trench;forming a recess in the sacrificial layer, releasing the opening of the trench;forming a restriction structure between the sacrificial layer and the opening of the trench, said restriction structure defining a through hole that forms a path for accessing the sacrificial layer from the opening;removing the sacrificial layer through said through hole; anddepositing a metal layer over the body, the metal layer closing the opening of the trench.2. The method according to claim 1 , wherein:the body has a front side and a back side, said opening of the trench being defined at the front side,forming the sacrificial layer including carrying out a process of deposition or growth on the front side and in the trench,forming the recess in the sacrificial layer including carrying out an etch to completely remove portions of the sacrificial layer on the front side and continuing the etch to remove partially the sacrificial layer in the trench starting from the opening thereof, thus forming said recess.3. The method according to claim 1 , wherein forming the sacrificial layer includes depositing a photoresist.4. The method according to claim 1 , wherein ...

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Номер записи: 20
27-01-2022 дата публикации

FIELD EMISSION-TYPE TOMOSYNTHESIS SYSTEM, EMITTER FOR FIELD EMISSION-TYPE TOMOSYNTHESIS SYSTEM, AND METHOD OF MANUFACTURING EMITTER

Номер: US20220028644A1
Автор: AHN Jeung Sun, Jung Jae Ik, KIM Woo Seob, KONG Moonkyoo, LIM Jong Min, PARK Jun Young, RYU Jehwang, YEO Seung Jun
Принадлежит: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Disclosed is a field emission-type tomosynthesis system including a vacuum body having a space therein; a plurality of sources provided inside the body, wherein each of the sources emits a plurality of electrons; and a plurality of anodes disposed inside the body to face the sources and responsible for emitting a plurality of X-rays, wherein each of the anodes faces a corresponding source among the sources, and the electrons collide with each of the anodes to generate X-rays, wherein the X-ray emission angle of each of the anodes is capable of being independently adjusted so as to focus the X-rays emitted toward an object located outside the body. With this configuration, a plurality of X-rays is focused on an object and is emitted to the object to obtain information, and the information is synthesized, thereby improving the reliability of information about the object. 1. A field emission-type tomosynthesis system , comprising:a vacuum body having a space therein;a plurality of sources provided inside the body, wherein each of the sources generates and emits a plurality of electrons; andanodes arranged to face the sources inside the body, wherein the electrons collide with each of the anodes to generate a plurality of X-rays,wherein an X-ray emission angle of each of the anodes is capable of being independently adjusted so as to focus the X-rays emitted toward an object located outside the body.2. The X-ray source system according to claim 1 , wherein each of the sources comprises carbon nanotubes (CNTs) and generates the electrons claim 1 , andinformation of the object photographed by the X-rays is capable of being synthesized.3. The field emission-type tomosynthesis system according to claim 1 , wherein the sources are provided in plural and are arranged in a row so as to be placed side by side with each other claim 1 , andthe anodes are disposed to correspond to the sources and are arranged in a row so as to be placed side by side with each other.4. The field ...

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Номер записи: 21
11-01-2018 дата публикации

ELECTRON EMITTING DEVICE USING GRAPHITE ADHESIVE MATERIAL AND MANUFACTURING METHOD FOR THE SAME

Номер: US20180012721A1
Автор: Lee Cheol Jin, Shin Dong Hoon, Sun Yu Ning, Yun Ki Nam
Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

The present disclosure relates to a manufacturing method for an electron emitting device using a graphite adhesive material. A method of preparing paste for forming a cathode of an electron emitting device includes: mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent; drying a mixed solution in which the nanomaterial and the graphite filler are mixed; and preparing paste by mixing a graphite binder with the dried mixture. 1. A method of preparing paste for forming a cathode of an electron emitting device , comprising:mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent;drying a mixed solution in which the nanomaterial and the graphite filler are mixed; andpreparing paste by mixing a graphite binder with the dried mixture.2. The method of preparing paste of claim 1 ,{'sub': '2', 'wherein the nanomaterial for electron emission is any one of carbon nanotube (CNT), graphene, boron-nitride (BN), molybdenum disulphide (MoS) and nanowire.'}3. The method of preparing paste of claim 1 ,wherein the solvent is any one organic solvent of ethanol, isopropyl alcohol (IPA), dichlorobenzene (1,2-dichlorobenzene) (DCB), dicholoroethane (1,2-dicholoroethane) (DCE), and N-methylpyrrolidone (1-methyl-2-pyrrolidone) (NMP).4. The method of preparing paste of claim 1 ,wherein the solvent is an aqueous solution in which any one of sodium dodecyl sulfate (SDS) and sodium dodecyl benzene sulfonate (SDBS) is mixed.5. The method of preparing paste of claim 1 ,wherein the dispersing includes performing sonication.6. The method of preparing paste of claim 1 ,wherein the preparing of paste includes mixing the dried mixture and the binder through a ball milling process.7. A method of manufacturing a cathode of an electron emitting device claim 1 , comprising:mixing and dispersing a nanomaterial for electron emission and a graphite filler in a solvent;drying a mixed solution in which the nanomaterial and the graphite ...

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Номер записи: 22
11-01-2018 дата публикации

VACUUM ELECTRON TUBE WITH PLANAR CATHODE BASED ON NANOTUBES OR NANOWIRES

Номер: US20180012723A1
Автор: MAZELLIER Jean-Paul, SABAUT Lucie
Принадлежит:

A vacuum electron tube comprises at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber, the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of the nanotube or nanowire elements substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element. 1. A vacuum electron tube comprising at least one electron-emitting cathode and at least one anode arranged in a vacuum chamber ,the cathode having a planar structure comprising a substrate comprising a conductive material, a plurality of nanotube or nanowire elements electrically insulated from the substrate, the longitudinal axis of said nanotube or nanowire elements being substantially parallel to the plane of the substrate, and at least one first connector electrically linked to at least one nanotube or nanowire element so as to be able to apply a first electrical potential to the nanowire or nanotube element.2. The vacuum electron tube according to claim 1 , wherein the nanotube or nanowire elements are substantially parallel to one another.3. The vacuum electron tube according to claim 1 , wherein which the first connector comprises a substantially planar contact element arranged on an insulating layer and linked to a first end of said nanotube or nanowire element.4. The vacuum electron tube according to claim 1 , wherein the cathode further comprises a first control means linked to the first connector and to the substrate claim 1 , and configured to apply a bias voltage between the substrate and the nanotube element so that the nanotube or nanowire element emits electrons through its surface by tunnel effect.5. The vacuum electron tube according to claim 4 , ...

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Номер записи: 23
21-01-2021 дата публикации

CARBON NANOTUBE FIELD EMITTER AND PREPARATION METHOD THEREOF

Номер: US20210017027A1
Автор: FAN SHOU-SHAN, GUO XUE-WEI, Liu Peng, MA LI-YONG, QIAN LI, WANG FU-JUN, WANG YU-QUAN, ZHANG CHUN-HAI, ZHOU DUAN-LIANG
Принадлежит:

A method for making a carbon nanotube field emitter is provided. A carbon nanotube film is dealed with a carbon nanotube film in a circumstance with a temperature ranged from 1400 to 1800° C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure. The at least one first carbon nanotube structure is heated to graphitize the at least one first carbon nanotube structure to form at least one second carbon nanotube structure. At least two electrodes is welded to fix one end of the at least one second carbon nanotube structure between adjacent two electrodes to form a field emission preparation body. The field emission preparation body has a emission end. The emission end is bonded to form a carbon nanotube field emitter. 1. A method for making a carbon nanotube field emitter , comprising:{'b': '1', 'S: handling a carbon nanotube film in an environment of a temperature ranged from 1400 to 1800° C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure;'}{'b': '2', 'S: heating the at least one first carbon nanotube structure to graphitize the first carbon nanotube structure thereby forming at least one second carbon nanotube structure;'}{'b': '3', 'S: welding at least two electrodes to fix one end of the at least one second carbon nanotube structure between the at least two electrodes to form a field emission preparation body, wherein the field emission preparation body comprises an emission end; and'}{'b': '4', 'S: bonding the emission end of the field emission preparation to form a carbon nanotube field emitter.'}2. The method of claim 1 , wherein the at least one second carbon nanotube structure comprises a first end and a second end claim 1 , the first end is opposite to the second end claim 1 , and the first end of the at least one second carbon nanotube structure is fixed between the at least two electrodes by a spot welding method or a laser welding method.3. The method of claim 2 , wherein ...

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Номер записи: 24
03-02-2022 дата публикации

PASSIVE AND ACTIVE DIAMOND-BASED ELECTRON EMITTERS AND IONIZERS

Номер: US20220037104A1
Автор: Craig Nicholas R., Rameau Jonathan D.
Принадлежит:

A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating. 1. A triple-point cathode coating comprising:an electrically conductive adhesive medium;electrically conductive NEA diamond particles cast or mixed with the adhesive medium;electrically insulative NEA diamond particles cast or mixed with the adhesive medium; anda plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.2. The coating of in which the electrically conductive NEA diamond particles contact electrically insulative NEA diamond particles at locations not submerged in the adhesive medium.3. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative particles have a grit size of between 0.5 microns to 150 microns.4. The coating of in which the electrically conductive NEA diamond particles and the electrically insulative diamond particles are mixed together before casting or mixing them with the adhesive medium.5. The coating of in which the adhesive medium includes silver.6. An ionizer comprising:a substrate; an electrically conductive adhesive medium,', 'electrically conductive NEA diamond particles cast or mixed with the adhesive medium,', 'electrically insulative NEA diamond particles cast or mixed with the adhesive medium, and', 'a plurality of exposed junctions between electrically conductive diamond particles and electrically insulating diamond particles to reduce any electrical charges on the substrate., 'a triple-point cathode coating ...

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Номер записи: 25
18-01-2018 дата публикации

Emitter, Electron Gun Using Emitter, Electronic Apparatus Using Electron Gun, and Method of Producing Emitter

Номер: US20180019091A1
Автор: Qin Luchang, TANG JIE, Yuan Jinshi, Zhang Han
Принадлежит:

The emitter of the present invention includes a nanowire. The nanowire is formed from a hafnium carbide (HfC) single crystal, and at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO). In the emitter, the thickness of the hafnium oxide may be 1 nm to 20 nm. 1. An emitter , comprising:a nanowire,wherein the nanowire is formed from a hafnium carbide (HfC) single crystal, and{'sub': '2', 'at least an end portion of the hafnium carbide single crystal, from which electrons are to be emitted, is covered with hafnium oxide (HfO).'}2. The emitter according to claim 1 , wherein the thickness of the hafnium oxide is 1 nm to 20 nm.3. The emitter according to claim 2 , wherein the thickness of the hafnium oxide is 1 nm to 10 nm.4. The emitter according to claim 3 , wherein the thickness of the hafnium oxide is 1 nm to 5 nm.5. The emitter according to claim 1 , wherein a shape of the end portion claim 1 , from which electrons are to be emitted claim 1 , is formed in a hemispherical shape through field evaporation processing.6. The emitter according to claim 1 , wherein a longitudinal direction of the nanowire matches a <100> crystal direction claim 1 , a <110> crystal direction claim 1 , or a <111> crystal direction of the hafnium carbide single crystal.7. The emitter according to claim 6 ,wherein a longitudinal direction of the nanowire matches a <100> crystal direction of the hafnium carbide single crystal, andthe end portion includes at least a {111} plane and a {110} plane.8. The emitter according to claim 1 , wherein a length of the nanowire in a transverse direction is 1 nm to 100 nm claim 1 , and a length of the nanowire in a longitudinal direction is 500 nm to 30 μm.9. An electron gun claim 1 , comprising:at least an emitter,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the emitter is the emitter according to .'}10. The electron gun according to claim 9 ,wherein the emitter ...

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Номер записи: 26
17-01-2019 дата публикации

PLASMON-EXCITED ELECTRON BEAM ARRAY FOR COMPLEMENTARY PATTERNING

Номер: US20190019648A1
Автор: PAN Liang, Xu Xianfan
Принадлежит: PURDUE RESEARCH FOUNDATION

A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses. 1. A system comprising:a light source configured to provide a plurality of light beams;a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to produce a plurality of corresponding electron emissions onto a wafer substrate, wherein the plasmonic lenses are configured to receive light beams from the light source, and wherein an entirety of each plasmonic lens of the plurality of plasmonic lenses comprise a metal layer.2. The system of claim 1 , further comprising a plurality of electrostatic microlenses configured to focus the electron emissions into corresponding electron beams for focusing on the wafer substrate.3. The system of claim 1 , further comprising a light source modulator connected to the light source.4. The system of claim 1 , further comprising a digital micro mirror which captures light from the light source and projects the light beamlets on the plasmonic lenses.5. The system of claim 1 , further comprising a positioning platform claim 1 , the positioning platform connected between the first substrate and the wafer substrate claim 1 , the positioning device configured to move the wafer substrate in relation to the first substrate.6. The system of claim 5 , wherein the positioning platform is a spinning positioning system.7. The system of claim 5 , wherein the positioning platform is a linear translation positioning system.8. The system of claim 2 , wherein ...

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Номер записи: 27
24-01-2019 дата публикации

DEVICE FOR IMAGING 1-D NANOMATERIALS

Номер: US20190025216A1
Автор: FAN SHOU-SHAN, JIANG KAI-LI, LIN XIAO-YANG, Wu Wen-Yun, Yue Jing-Ying, Zhao Qing-Yu
Принадлежит:

A device for imaging one dimension nanomaterials is provided. The device includes an optical microscope with a liquid immersion objective, a laser device, and a spectrometer. The laser device is configured to provide an incident light beam with a continuous spectrum. The spectrometer is configured to obtain spectral information of the one dimensional nanomaterials. 1. A device for imaging one dimensional nanomaterials , comprising:an optical microscope with a liquid immersion objective;a laser device configured to provide an incident light beam with a continuous spectrum; anda spectrometer configured to obtain spectral information of the one dimensional nanomaterials.2. The device of claim 1 , further comprising a container comprising a side wall and a bottom wall claim 1 , the side wall and the bottom wall together define a chamber for containing the one dimensional nanomaterials and a liquid.3. The device of claim 2 , wherein an angle between the side wall and the bottom wall is in a range from 45 degrees to 90 degrees.4. The device of claim 3 , wherein the angle between the side wall and the bottom wall is 75 degrees.5. The device of claim 2 , wherein the incident light beam emitted from the laser device is perpendicular to the side wall.6. The device of claim 2 , wherein the side wall comprises a planar quartz window.7. The device of claim 2 , wherein the one dimensional nanomaterials is located on the bottom wall.8. The device of claim 1 , wherein the device further comprises a filter configured to filter out infrared light of the incident light beam claim 1 , and the filter is located in an optical path of the incident light beam.9. The device of claim 1 , further comprising a focusing lens configured to increase intensity of the incident light beam claim 1 , and the focusing lens is located in an optical path of the incident light beam.10. The device of claim 1 , further comprising a camera connected to the optical microscope.11. The device of claim 1 , ...

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Номер записи: 28
25-01-2018 дата публикации

PHOTOELECTRIC SURFACE, PHOTOELECTRIC CONVERSION TUBE, IMAGE INTENSIFIER, AND PHOTOMULTIPLIER TUBE

Номер: US20180025881A1
Автор: SASAKI Tatsuo
Принадлежит: HAMAMATSU PHOTONICS K.K.

The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF, the sensitivity of the ultraviolet band is improved. 1. A photoelectric surface having a laminated structure comprising:a window material that transmits ultraviolet rays;a conductive film that is formed on the window material and has conductivity;an intermediate film that is formed on the conductive film and includes a compound of magnesium and fluorine; anda photoelectric conversion film that is formed on the intermediate film and includes tellurium and an alkali metal.2. The photoelectric surface according to claim 1 ,wherein the compound is magnesium fluoride.3. The photoelectric surface according to claim 1 ,wherein the alkali metal is cesium.4. The photoelectric surface according to claim 1 ,wherein the conductive film includes titanium.5. The photoelectric surface according to claim 1 ,wherein the window material includes quartz.6. A photoelectric conversion tube comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a vacuum container that includes the photoelectric surface according to .'}7. An image intensifier comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a vacuum container that includes the photoelectric surface according to ;'}electron multiplier means that is accommodated in the vacuum container and multiplies electrons emitted from the photoelectric conversion film; anda fluorescent surface onto which the electrons multiplied by the electron multiplier means are incident and that convert the electrons multiplied by the ...

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Номер записи: 29
10-02-2022 дата публикации

SELF-ASSEMBLED HELICAL SLOW-WAVE STRUCTURES FOR HIGH-FREQUENCY SIGNALS

Номер: US20220044904A1
Автор: Bhat Abhishek, Cavallo Francesca, Dwyer Matthew McLean, Lagally Max G., van der Weide Daniel Warren
Принадлежит:

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate. 1. A method of making a slow-wave structure , the method comprising:forming a dielectric support membrane on a device substrate;forming a sacrificial film on a portion of a surface of the dielectric support membrane;forming a scaffold film comprising a strained dielectric material on a portion of a surface of the sacrificial film;forming a plurality of parallel, electrically conductive strips on the scaffold film, each of the electrically conductive strips having a leading end and a trailing end, wherein an edge of the scaffold film or the trailing ends of the electrically conductive strips are attached to the dielectric support membrane;selectively removing the sacrificial film underlying the scaffold film, wherein the scaffold film relaxes and rolls into a cylinder, bringing the electrically conducting strips into an end-to-end arrangement that forms a helix on an interior surface of the cylinder;electroplating the surface of the helix with an electrically conductive material;forming a first electrically conductive contact in electrical communication with a first end of the helix; andforming a second electrically conductive contact in electrical communication with the second end of the helix.2. The method of claim 1 , further comprising selectively removing a portion of the device substrate below the cylinder claim 1 , such that the portion of the dielectric support membrane to which the cylinder is tethered is suspended over the device substrate.3. The method of claim 1 , wherein the scaffold film comprises silicon nitride claim 1 , silicon oxide claim 1 , aluminum oxide claim 1 , or diamond.4. The method of claim 3 , ...

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Номер записи: 30
24-01-2019 дата публикации

Suspended Grid Structures For Electrodes In Vacuum Electronics

Номер: US20190027334A1
Автор: Andrew R. Lingley, Andrew T. Koch, Chloe A. M. Fabien, Max N. Mankin, Tony S. Pan, Yong Sun
Принадлежит: Modern Electron Inc

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

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Номер записи: 31
23-01-2020 дата публикации

Diamond Semiconductor Device

Номер: US20200027683A1
Автор: Taylor Gareth Andrew
Принадлежит:

An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers. 1. An electrical device comprising:a substrate of diamond material;at least one elongate first electrically conductive portion extending into a respective recess in said substrate; andat least one doped semiconducting region, arranged between at least one respective said first electrically conductive portion and said substrate, and adapted to behave as an n type semiconducting material on application of an electric field, between said first electrically conductive portion and said substrate, suitable to cause a region of positive space charge within the semiconducting region,wherein at least one recess further comprises at least one inclined distal surface defining a point, wherein at least one doped semiconducting region is arranged on a respective inclined distal surface.2. The device of claim 1 , wherein at least one said semiconducting region includes diamond.3. The device of claim 1 , wherein at least one said semiconducting region includes at least one donor dopant to impart an n-type semiconducting characteristic to said region.4. The device of claim 3 , wherein at least one said semiconducting region includes a plurality of dopant materials to impart an n-type semiconducting characteristic to said region.5. The device of according to claim 3 , wherein at least one said dopant is a group I element.6. The device of claim 3 , wherein at least one said dopant is a group V element.7. The device of claim 3 , wherein at least one said dopant is a group VI element.8. The device of claim 1 , wherein at least one said first ...

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Номер записи: 32
28-01-2021 дата публикации

FIELD EMISSION APPARATUS WITH SUPERIOR STRUCTURAL STABILITY AND X-RAY TUBE COMPRISING THE SAME

Номер: US20210027969A1
Автор: CHOI Hong Soo, Gihm Se Hoon, Kim Sug Chul
Принадлежит:

Provided is a field emission apparatus including a pipe-shaped emitter holder comprising an electrically conductive material and a first internal space communicated in a first direction, and an emitter electrode having one or more yarns each having a structure extending in the first direction in which a plurality of CNTs that extend in the first direction are aggregated, and the emitter electrode is inserted in the first internal space while extending in the first direction. 1. A field emission apparatus , comprising:a pipe-shaped emitter holder comprising an electrically conductive material and a first internal space communicated in a first direction; andan emitter electrode comprising one or more yarns each having a structure extending in the first direction in which a plurality of carbon nanotubes (CNTs) that extend in the first direction are aggregated,wherein the emitter electrode is inserted in the first internal space of the emitter holder while extending along the first direction.2. The field emission apparatus of claim 1 , wherein the emitter electrode is inserted in the first internal space with at least a part thereof electrically in contact with an inner surface of the emitter holder claim 1 , so that electric currents flow between the emitter holder and the emitter electrode.3. The field emission apparatus of claim 1 , wherein:the emitter holder comprises a band-shaped first front end, a band-shaped first base end, an inner surface extending in the first direction between an inner periphery of the first front end and an inner periphery of the first base end and defining the first internal space, and an outer surface extending in the first direction between an outer periphery of the first front end and an outer periphery of the first base end,the first internal space extends in the first direction from the first front end to the first base end, andthe emitter electrode comprises a second front end and a second base end.4. The field emission apparatus of ...

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Номер записи: 33
28-01-2021 дата публикации

Large scale stable field emitter for high current applications

Номер: US20210027972A1
Автор: Anthony SKEATS, Brian Gonzales, Gandalf DU PREEZ, Peter YARON, Robert C. SHEEHY, Steven TREWARTHA, Susanne SAHLOS
Принадлежит: Micro X Ltd

The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.

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Номер записи: 34
04-02-2021 дата публикации

Emitter Structures for Enhanced Thermionic Emission

Номер: US20210035765A1
Автор: Ebersohn Frans Hendrik, Heinrich Jonathon Robert, Sovereign Randall James, Sullivan Regina Mariko
Принадлежит:

In one embodiment, a system includes a cathode and a thermionic emitter installed at least partially within the cathode tube of the cathode. The thermionic emitter is in a shape of a hollow cylinder. The hollow cylinder includes an outer surface and an unsmooth inner surface. The outer surface is configured to contact an inner surface of the cathode tube. The unsmooth inner surface includes a plurality of structures that provide an increase in surface area over a smooth surface. 1. A system , comprising:a cathode comprising a cathode tube; and the hollow cylinder comprises an outer surface and an unsmooth inner surface;', 'the outer surface is configured to contact an inner surface of the cathode tube;', 'the unsmooth inner surface comprises a plurality of structures; and', 'the plurality of structures of the unsmooth inner surface provide an increase in surface area over a smooth surface., 'a thermionic emitter installed at least partially within the cathode tube, the thermionic emitter comprising a shape of a hollow cylinder, wherein2. The system of claim 1 , wherein the plurality of structures of the unsmooth inner surface comprises:a plurality of semi-circular troughs that extend from a first end of the thermionic emitter to a second end of the thermionic emitter that is opposite the first end; anda plurality of ridges that extend from the first end of the thermionic emitter to the second end of the thermionic emitter, wherein each one of the plurality of ridges is between two of the plurality of semi-circular troughs.3. The system of claim 1 , wherein the plurality of structures of the unsmooth inner surface comprises:a plurality of triangular troughs that extend from a first end of the thermionic emitter to a second end of the thermionic emitter that is opposite the first end; anda plurality of ridges that extend from the first end of the thermionic emitter to the second end of the thermionic emitter, wherein each one of the plurality of ridges is between two ...

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Номер записи: 35
08-02-2018 дата публикации

MICROSTRUCTURED SURFACE WITH LOW WORK FUNCTION

Номер: US20180040449A1
Автор: Hyde Roderick A., JR. Lowell L., Kare Jordin T., Pan Tony S., Wood
Принадлежит: ELWHA LLC

A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission. 1. A multilayer junction-edge emitter structure , comprising:a substrate;a first layer on the substrate, wherein the first layer includes a first semiconductor;a second layer on the first layer, wherein the second layer includes one of a second semiconductor different from the first semiconductor, an oxide, or a metal, wherein the first layer and the second layer are configured to form a 2-dimensional electron gas (2DEG) at a junction of the first layer and the second layer; andan exposed surface intersecting the 2DEG to form an effectively one-dimensional horizontal line source of electron emission.2. The multilayer junction-edge emitter structure of claim 1 , wherein the 2DEG emits electrons having a low work function compared to electrons emitted from a conventional material surface.3. The multilayer junction-edge emitter structure of claim 1 , further comprising an anode spaced from the exposed surface claim 1 , the anode configured to captured electrons emitted by the horizontal line source of electron emission.4. The multilayer junction-edge emitter structure of claim 3 , wherein the anode is a constant distance from at least a portion an intersection of the exposed surface and the 2DEG.5. The multilayer junction-edge emitter structure of claim 3 , wherein the anode is biased relative to the 2DEGH to increase or decrease emission of electrons.6. The multilayer junction-edge emitter structure of claim 3 , further comprising at least ...

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Номер записи: 36
08-02-2018 дата публикации

ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING METHOD THEREOF

Номер: US20180040451A1
Автор: BAO Zhiying, CHEN Xiaochuan, Jiang Wenbo, LI Yue, Lv Zhenhua, Wang Lei, WANG Shijun, XIAO Wenjun, XUE Yanna, Zhang Yong
Принадлежит:

The present application discloses an array substrate comprising a first substrate, a first electrode on the first substrate, a passivation layer on a side of the first electrode distal to the first substrate, the passivation layer comprising a plurality of first vias, each of which corresponds to a different part of the first electrode, an electron emission source layer on a side of the first electrode distal to the first substrate comprising at least one electron emission source in each of the plurality of first vias, and a dielectric layer on a side of the first electrode distal to the first substrate comprising a plurality of dielectric blocks corresponding to the plurality of first vias, at least a portion of each of the plurality of dielectric blocks in each of the plurality of first vias. The at least one electron emission source comprises a first portion having a first end and a second portion having a second end. The first end is in contact with the first electrode, the first portion is within a corresponding one of the plurality of dielectric blocks. The second portion and the second end are outside the corresponding one of the plurality of dielectric blocks. 1. An array substrate , comprising:a first substrate;a first electrode on the first substrate;a passivation layer on a side of the first electrode distal to the first substrate, the array substrate comprising a plurality of first vias in the passivation layer, each of which corresponds to a different part of the first electrode;an electron emission source layer on a side of the first electrode distal to the first substrate comprising at least one electron emission source in each of the plurality of first vias; anda dielectric layer on a side of the first electrode distal to the first substrate comprising a plurality of dielectric blocks corresponding to the plurality of first vias, at least a portion of each of the plurality of dielectric blocks in each of the plurality of first vias;wherein the at ...

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Номер записи: 37
18-02-2021 дата публикации

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE, FIELD EMISSION DEVICE INCLUDING THE COMPOSITE, BIOSENSOR INCLUDING THE COMPOSITE, SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE, AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE

Номер: US20210050590A1
Автор: Chang Jaejun, Choi Jaeman, Ku Junhwan, LI Xiangshu, PARK JONGHWAN, Son InHyuk
Принадлежит:

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Номер записи: 38
03-03-2022 дата публикации

SYNTHESIS AND USE OF MATERIALS FOR ULTRAVIOLET FIELD-EMISSION LAMPS

Номер: US20220064001A1
Автор: Coe-Sullivan Seth, LALEYAN David Arto, Stevenson Matthew
Принадлежит:

Processes for synthesizing the hexagonal polymorph of boron nitride (h-BN) produce h-BN of a grade that is highly suitable for ultraviolet (UV) field-emission lights and other UV applications. 1. An article of manufacture comprising hexagonal boron nitride (h-BN) , wherein the h-BN is manufactured by a process comprising:{'sup': '−6', 'claim-text': generating particles comprising boron from a source comprising boron, wherein the source is inside the high-vacuum chamber;', 'receiving the particles generated from the source at a substrate that is inside the high-vacuum chamber; and', 'forming the h-BN on the substrate, the h-BN comprising the particles received from the source; and, 'inside a high-vacuum chamber that is at a pressure of less than 10Torrwherein the h-BN manufactured by the process has an emission spectrum comprising a first luminescence peak at a wavelength less than 230 nanometers (nm) and a second luminescence peak at a wavelength greater than 230 nm, and wherein the first luminescence peak is greater than the second luminescence peak by a ratio of at least 30-to-one.2. The article of manufacture of claim 1 , wherein the process comprises controlling the pressure inside the high-vacuum chamber in a range between 10Torr and 10Torr.3. The article of manufacture of claim 1 , wherein the process further comprises heating the substrate to a temperature greater than 700 degrees-Celsius (° C.) and not greater than 1500° C.4. The article of manufacture of claim 1 , wherein the boron in the source is ultra-high purity greater than 99.9 percent.5. The article of manufacture of claim 1 , wherein the process further comprises receiving claim 1 , at the substrate claim 1 , nitrogen from a nitrogen plasma source.6. The article of manufacture of claim 1 , wherein the process further comprises introducing claim 1 , into the high-vacuum chamber claim 1 , a mixture of gases comprising nitrogen.7. The article of manufacture of claim 1 , wherein the process further ...

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Номер записи: 39
26-02-2015 дата публикации

Pattern formation method, mask for pattern formation, method for manufacturing mask, and pattern formation apparatus

Номер: US20150053867A1
Автор: Ryoichi Inanami, Shinichi Ito, Takashi Sato
Принадлежит: Toshiba Corp

According to one embodiment, a pattern formation method includes: preparing a mask pattern for interference, a photoelectric conversion unit, and a processing object, the mask pattern for interference being periodically arranged a plurality of light transmissive portions, the photoelectric conversion unit being disposed apart from the mask pattern for interference; applying light to the mask pattern for interference to produce Talbot interference based on transmitted light of the light transmitted through the light transmissive portions; applying interference light produced by the Talbot interference to the photoelectric conversion unit to cause the photoelectric conversion unit to emit electrons based on the interference light; and forming a pattern by applying the electrons to the processing object.

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Номер записи: 40
03-03-2022 дата публикации

Field Emission Devices

Номер: US20220068584A1
Автор: Connelly Joseph M., Harris John R., Lewellen John W.
Принадлежит: Government of the United States, as represented by the Secretary of the Air Force

A method for making field emission devices so that they have emitter tips in the form of a needle-like point with a width and length configured such that ratio of the width to the length ranges from about 0.001 to about 0.05, and associated methods for making the tips by 3-D printing. 1. A method for making a field emission device , comprising the steps of:providing an array of emitter tips; andcoating portions of the emitter tips with a conductive material by depositing the conductive material onto the emitter tips from one side only of the emitter tips at an angle of from about 30 degrees to about 60 degrees relative to the length axis of the emitter tips such that the conductive material is deposited onto the emitter tips in a sharp tip configuration in the form of a needle-like point with a width and length configured such that the ratio of the width to the length ranges from about 0.001 to about 0.05.2. The method of claim 1 , wherein the array of emitter tips is formed by 3-D printing.3. The method of claim 2 , wherein the 3-D printing is performed by one or more of fused deposition modeling claim 2 , inkjet printing claim 2 , stereolithography claim 2 , and selective sintering.4. The method of claim 2 , wherein the array of emitter tips formed by 3-D printing is made from one or more of carbon claim 2 , metal claim 2 , powder of nylon claim 2 , graphite-infused nylon claim 2 , aluminum-infused nylon and conductive resin.5. The method of claim 1 , wherein in the array the emitters are identical to one another.6. The method of claim 1 , wherein in the array the emitters are uniformly spaced apart.7. The method of claim 1 , wherein in the array the emitters are not identical to one another.8. The method of claim 1 , wherein in the array the emitters are not uniformly spaced apart.9. The method of claim 1 , wherein the step of providing the array of emitter tips comprises providing the array of emitter tips from a soluble material claim 1 , and the method further ...

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Номер записи: 41
14-02-2019 дата публикации

Electron Source

Номер: US20190049851A1
Автор: Chuang Yung-Ho Alex, Fielden John, Liu Xuefeng, Xiao-Li Yinying
Принадлежит:

An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped. 1. An electron source comprising:a silicon substrate having a top surface;at least one field emitter formed directly on the top surface of the silicon substrate, wherein the field emitter comprises one of a pyramid, a cone, or a rounded whisker; anda boron layer hermetically disposed on the field emitter, wherein the boron layer is greater than 75% boron, and wherein the boron layer covers the field emitter from the silicon substrate to a tip of the field emitter.2. The electron source of claim 1 , wherein the boron layer comprises less than 10% oxygen near an interface between the boron layer and the silicon substrate.3. The electron source of claim 1 , wherein the tip of the field emitter has a lateral dimension less than 100 nm.4. The electron source of claim 3 , wherein the tip of the field emitter has a lateral dimension greater than 20 nm.5. The electron source of claim 1 , wherein the tip of the field emitter has a diameter less than 100 nm.6. The electron source of claim 1 , further comprising an electrode held at a positive voltage of less than 500 V relative to the field emitter at a distance of 2 μm or less from an apex of the field emitter.7. ...

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Номер записи: 42
23-02-2017 дата публикации

COUPLING DEVICES AND SOURCE ASSEMBLIES INCLUDING THEM

Номер: US20170053787A1
Автор: Ferrara Keith
Принадлежит:

Certain embodiments described herein are directed to couplers that can be used to provide a seal between a source assembly and a vacuum chamber. In certain examples, the seal can be provided upon movement of a moveable component of the coupler. In some examples, rotation of the moveable component is operative to provide an axial force to a stationary component coupled to the moveable component such that the stationary component is biased to provide a suitable seal to the vacuum chamber. 140-. (canceled)41. A method of coupling a source assembly to a device , the method comprising:inserting the source assembly into a vacuum chamber of the device; andsealing the source assembly to the vacuum chamber by movement of a moveable component on the inserted source assembly to couple the source assembly to the vacuum chamber.42. The method of claim 41 , further comprising performing the sealing step without using any external fasteners.43. The method of claim 41 , further comprising rotating the moveable component to provide the seal between the source assembly to the vacuum chamber.44. The method of claim 43 , further comprising rotating the moveable component until a pin on an instrument housing including the vacuum chamber engages a detent on a slot of the moveable component.45. The method of claim 41 , further comprising depressing a button on the moveable component to provide the seal between the source assembly to the vacuum chamber.46. The method of claim 45 , further comprising depressing the button a second time to release the seal between the source assembly to the vacuum chamber.47. The method of claim 41 , further comprising configuring the source assembly with a stationary component coupled to the moveable component claim 41 , the stationary component comprising a vacuum port configured to seal to a sealing face of the vacuum chamber upon movement of the moveable component.48. The method of claim 47 , further comprising configuring the moveable component as a cam ...

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Номер записи: 43
25-02-2021 дата публикации

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE, FIELD EMISSION DEVICE INCLUDING THE COMPOSITE, BIOSENSOR INCLUDING THE COMPOSITE, SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE, AND THERMOELECTRIC DEVICE INCLUDING THE COMPOSITE

Номер: US20210057729A1
Автор: Chang Jaejun, Choi Jaeman, Ku Junhwan, LI Xiangshu, PARK JONGHWAN, Son InHyuk
Принадлежит:

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Номер записи: 44
05-03-2015 дата публикации

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF

Номер: US20150060757A1
Автор: KIM Do-yoon, Kim Yong-Chul, Lee Chang-Soo, LEE Dong-gu, PARK Shang-hyeun
Принадлежит: KUMOH NATIONAL INSTITUTE OF TECHNOLOGY

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode comprising a graphene sheet covering the opening.2. The field emission device of claim 1 , wherein the gate electrode further comprises an electrode unit around the opening claim 1 , andwherein the graphene sheet is connected to the electrode unit.3. The field emission device of claim 1 , wherein the graphene sheet is a graphene single-layered film or a graphene multi-layered film.4. A field emission device claim 1 , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter; anda gate electrode, supported by the insulating spacer, comprising an electrode unit that defines an opening that is a discharge path of electrons emitted from the emitter, and a tunneling member that covers the opening and passes the electrons therethrough according to a tunneling effect.5. ...

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Номер записи: 45
05-03-2015 дата публикации

FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF

Номер: US20150060758A1
Автор: JEONG Taewon, KIM Ilhwan, Kim Yongchul, Lee Donggu, PARK Shanghyeun
Принадлежит: Kumoh National Institute of Technology - Academic Cooperation Foundation

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. 1. A field emission device , comprising:an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode;an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; anda gate electrode around the opening;wherein the electron emission source comprises a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.2. The field emission device of claim 1 , wherein each of the plurality of graphene thin films comprises:a first portion buried in the cathode electrode; anda second portion that extends from the first portion and is exposed from the cathode electrode.3. The field emission device of claim 1 , wherein the cathode electrode has a pointed shape toward the opening claim 1 , andwherein the plurality of graphene thin films are in a pointed structure toward the opening.4. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene single-layered film.5. The field emission device of claim 1 , wherein each of the plurality of graphene thin films is a graphene multi-layered film.6. A field emission device claim 1 , comprising:a body comprising a cavity and an opening allowing the cavity to communicate with an outside of the body;a cathode electrode in the cavity, wherein a plurality of graphene thin films are vertically toward the opening at a position in the cavity ...

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Номер записи: 46
03-03-2016 дата публикации

Method and device for imaging 1-d nanomaterials

Номер: US20160061734A1
Автор: Jing-Ying Yue, Kai-Li Jiang, Qing-Yu Zhao, Shou-Shan Fan, Wen-Yun Wu, xiao-yang Lin
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A method for imaging one dimension nanomaterials is provided. Firstly, one dimension nanomaterials sample, an optical microscope with a liquid immersion objective and a liquid are provided. Secondly, the one dimensional nanomaterials sample is immersed in the liquid. Thirdly, the one dimensional nanomaterials sample is illuminated by an incident beam to generate resonance Rayleigh scattering. Forthly, the liquid immersion objective is immersed into the liquid to get a resonance Rayleigh scattering (RRS) image of the one dimensional nanomaterials sample. Fifthly, spectra of the one dimensional nanomaterials sample are measured to obtain chirality of the one dimensional nanomaterials sample.

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Номер записи: 47
02-03-2017 дата публикации

Photocathode

Номер: US20170062169A1
Автор: MacPhee Andrew, Opachich Yekaterina
Принадлежит:

A photocathode designs that leverage the grazing incidence geometry yield improvements through the introduction of recessed structures, such as cones, pyramids, pillars or cavities to the photocathode substrate surface. Improvements in yield of up to 20 times have been shown to occur in grazing incidence geometry disclosed herein due to a larger path length of the X-ray photons which better matches the secondary electron escape depth within the photocathode material. A photocathode includes a substrate having a first side and a second side, the first side configured to receive x-ray energy and the second side opposing the first side. A structured surface is associated with the second side of the substrate such that the structured surface includes a plurality of recesses from the second side of the substrate into the substrate. 1. A photocathode for use in x-ray detection from 1 to 30 keV comprising:a substrate having a first side and a second side, the first side configured to receive x-ray energy and the second side opposing the first side;a structured surface associated with the second side of the substrate, the structured surface comprising a plurality of recesses from the second side of the substrate into the substrate.2. The photocathode of wherein the second side is coated with gold or cesium iodide.3. The photocathode of wherein the recess is a cone shape.4. The photocathode of wherein the recess is a pyramid shape.5. The photocathode of wherein the recess includes a recess side wall that forms a wall angle of 5 degrees.6. The photocathode of wherein the recess includes a recess side wall that forms a wall angle of 10 degrees.7. A method for generating electrons based on x-ray strikes comprising:providing a photocathode in an x-ray path, the photocathode comprising a substrate having a first surface and a second surface, the first surface facing the x-ray path and the second surface generally parallel to and opposite the first surface, the second surface ...

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Номер записи: 48
08-03-2018 дата публикации

SECONDARY ION MASS SPECTROSCOPIC METHOD, MASS SPECTROMETER AND USES THEREOF

Номер: US20180067062A1
Автор: Kayser Sven
Принадлежит:

In a secondary ion mass spectroscopic (SIMS) method, and a mass spectrometer for implementing the method, for depth-profiling analysis of alkali metals in a sample which comprises an insulating material or is an insulator. The sample is irradiated by an ion beam as an analysis beam for desorption of secondary ions from the uppermost layers, such that the surface of the sample is removed with the same or a further ion beam. The ion beam used for removal of the sample surface comprises essentially gas clusters or consists of gas clusters. 110.-. (canceled)11. In a secondary ion mass spectroscopic (SIMS) method for depth-profiling analysis of alkali metals in a sample comprising an insulating material , the sample being irradiated by an ion beam as an analysis beam for desorption of secondary ions from the uppermost layers of the sample and the surface of the sample being removed with the same or a further ion beam ,the improvement wherein the ion beam used for removal of the sample surface essentially comprises or consists of gas clusters.12. The method according to claim 11 , wherein the ion beam used for removal of the sample surface essentially comprises or consists of gas clusters of oxygen molecules or oxygen-containing molecules or both oxygen molecules and oxygen-containing molecules.13. The method according to claim 12 , wherein the ion beam used for removal of the sample surface comprises or consists of ≧40% of clusters of oxygen molecules or oxygen-containing molecules or both oxygen molecules and oxygen-containing molecules.14. The method according to claim 12 , wherein the ion beam used for removal of the sample surface comprises or consists of ≧60% of clusters of oxygen molecules or oxygen-containing molecules or both oxygen molecules and oxygen-containing molecules.15. The method according to claim 12 , wherein the ion beam used for removal of the sample surface comprises or consists of ≧80% of clusters of oxygen molecules or oxygen-containing molecules ...

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Номер записи: 49
28-02-2019 дата публикации

ENHANCED ELECTRON AMPLIFIER STRUCTURE AND METHOD OF FABRICATING THE ENHANCED ELECTRON AMPLIFIER STRUCTURE

Номер: US20190066961A1
Автор: Elam Jeffrey W., Mane Anil U.
Принадлежит:

An enhanced electron amplifier structure includes a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface, an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide, a resistive coating layer formed on the first ion diffusion layer, an emissive coating layer formed on the resistive coating layer, and an optional ion feedback layer formed on the front surface of the structure. The emissive coating produces a secondary electron emission responsive to an interaction with a particle received by the channel. The ion diffusion layer, the resistive coating layer, the emissive coating layer, and the ion feedback layer are independently deposited via chemical vapor deposition or atomic layer deposition. 1. An enhanced electron amplifier structure comprises:a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface;an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide;a resistive coating layer formed on the ion diffusion layer;an emissive coating layer formed on the resistive coating layer, the emissive coating configured to produce a secondary electron emission responsive to an interaction with a particle received by the channel,wherein the ion diffusion layer, the resistive coating layer, and the emissive coating layer are independently deposited via chemical vapor deposition or atomic layer deposition.2. The enhanced electron amplifier structure of claim 1 , wherein the metal oxide of the ion diffusion layer comprises MgO claim 1 , AlO claim 1 , HfO claim 1 , TiO claim 1 , GdOor ZrO.3. The enhanced electron amplifier structure of claim 1 , further comprising ...

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Номер записи: 50
27-02-2020 дата публикации

CATHODES WITH CONFORMAL CATHODE SURFACES, VACUUM ELECTRONIC DEVICES WITH CATHODES WITH CONFORMAL CATHODE SURFACES, AND METHODS OF MANUFACTURING THE SAME

Номер: US20200066474A1
Автор: Coso Dusan, de Pijper Ad, Kraemer Daniel, Lorr John J., Mankin Max N., Pan Tony S.
Принадлежит: Modern Electron, LLC

Disclosed embodiments include cathodes with conformal cathode surfaces, vacuum electronic devices with cathodes with conformal cathode surfaces, and methods of manufacturing the same. In a non-limiting embodiment, a cathode for a vacuum electronic device includes: a substrate having a predetermined shape; and electron emissive material disposed on at least one portion of at least one surface of the substrate, a shape of the electron emissive material conforming to the predetermined shape of the substrate. 1. A cathode for a vacuum electronic device , the cathode comprising:a substrate having a predetermined shape; andelectron emissive material disposed on at least one portion of at least one surface of the substrate, a shape of the electron emissive material conforming to the predetermined shape of the substrate.2. The vacuum electronic device of claim 1 , wherein any portion of an electrically insulated surface of the substrate without the electron emissive material disposed thereon electrically isolates the electron emissive material.3. The vacuum electronic device of claim 1 , wherein the substrate has a shape chosen from a cylinder claim 1 , a polygonal cylinder claim 1 , a polyhedron claim 1 , a tube claim 1 , a plane claim 1 , a sheet claim 1 , and a slab.4. The cathode of claim 1 , wherein the substrate is made of an electrically insulating material.5. The cathode of claim 4 , wherein the substrate is made of a ceramic material.6. The cathode of claim 5 , wherein the ceramic material includes at least one material chosen from aluminum oxide claim 5 , silicon carbide claim 5 , zirconium oxide claim 5 , silicon oxide claim 5 , and silicon nitride.7. The cathode of claim 1 , wherein the substrate is made from a metal.8. The cathode of claim 7 , wherein the substrate is coated on at least one surface with an electrically insulating material.9. The cathode of claim 1 , wherein the electron emissive material includes at least one metal chosen from tungsten claim 1 ...

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Номер записи: 51
16-03-2017 дата публикации

Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones

Номер: US20170076901A1
Автор: Hirsch Gregory
Принадлежит:

Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species. 1. A method comprising the steps of:(a) placing at least one electrically conductive material in a vacuum, said electrically conductive material chosen to be a refractory material;(b) heating said at least one electrically conductive material to at least its melting point by a first application of focused energy incident on it, said first application modulated in accordance with an application waveform;(c) applying a positive potential to said at least one electrically conductive material to form at its end a corresponding at least one liquid Taylor cone;(d) quenching said at least one liquid Taylor cone by a cessation of said focused energy to form a corresponding at least one frozen Taylor cone, said cessation modulated in accordance with a cessation waveform;(e) heating a corresponding tip of said at least one frozen Taylor cone by a second application of focused energy incident on said corresponding tip, said second application modulated in accordance with a shaping waveform; and(f) obtaining structural characteristics of said ...

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Номер записи: 52
05-03-2020 дата публикации

Suspended Grid Structures For Electrodes In Vacuum Electronics

Номер: US20200075286A1
Автор: Fabien Chloe A. M., Foley Gary D., Koch Andrew T., Kokonaski William, Lingley Andrew R., Mankin Max N., Pan Tony S., Sun Yong
Принадлежит: Modern Electron, LLC

Disclosed embodiments include vacuum electronic devices and methods of fabricating a vacuum electronic device. In a non-limiting embodiment, a vacuum electronic device includes an electrode that defines discrete support structures therein. A first film layer is disposed on the electrode about a periphery of the electrode and on the support structures. A second film layer is disposed on the first film layer. The second film layer includes electrically conductive grid lines patterned therein that are supported by and suspended between the support structures. 1. A vacuum electronics device comprising:an electrode that defines a plurality of discrete support structures therein;a first film layer disposed on the electrode about a periphery of the electrode and on the plurality of support structures; anda second film layer disposed on the first film layer, the second film layer including electrically conductive grid lines patterned therein that are supported by and suspended between the plurality of support structures.2. The device of claim 1 , wherein the electrode includes an electrically conductive substrate.3. The device of claim 2 , wherein the electrically conductive substrate includes at least one material chosen from chromium claim 2 , platinum claim 2 , nickel claim 2 , tungsten claim 2 , molybdenum claim 2 , niobium claim 2 , and tantalum.4. The device of claim 2 , wherein the electrically conductive substrate includes one of doped silicon claim 2 , doped silicon coated with metal claim 2 , and undoped silicon coated with a metal.5. The device of claim 4 , wherein the metal includes a metal chosen from aluminum claim 4 , chromium claim 4 , platinum claim 4 , nickel claim 4 , tungsten claim 4 , molybdenum claim 4 , niobium claim 4 , and tantalum.6. The device of claim 1 , wherein the plurality of support structures include pillars.7. The device of claim 1 , wherein the plurality of support structures are spaced apart from each other in a spacing manner chosen ...

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Номер записи: 53
14-03-2019 дата публикации

METHOD FOR CONTROLLABLY GROWING ZNO NANOWIRES

Номер: US20190080869A1
Автор: CARLSSON Jan-Otto, HOLLMAN Patrik, TENERZ Helena, TIRÉN Jonas
Принадлежит: LIGHTLAB SWEDEN AB

The present invention relates to a method for controllably growing ZnO nanowires, for example to be used in relation to field emission lighting. In particular, the invention relates to a method of controlling thermal oxidation conditions to achieve steady-state conditions between an oxygen consumption rate by a growing oxide on a surface of a structure and the decomposition rate of the oxygen-carrying species within the chamber. The invention also relates to a corresponding field emission cathode. 1. A method for controllably growing zinc oxide (ZnO) nanowires on a surface of a structure by means of thermal oxidation , the structure comprising a zinc layer covering at least a portion of the structure , the method comprising:arranging the structure within a thermal oxidation chamber, the chamber having a gas inlet and a gas outlet for allowing a gas flow through the chamber;providing a gas comprising an oxygen-carrying precursor through the gas inlet of the chamber; andcontrolling a concentration of oxygen along the surface of the structure by:controlling a temperature within the chamber; andcontrolling a gas flow of the gas comprising the oxygen-carrying precursor through the chamber,such that steady-state conditions are achieved between an oxygen consumption rate by a growing oxide on the surface of the structure and the decomposition rate of the oxygen-carrying species within the chamber, thereby maintaining the same zinc oxidation conditions along the surface of the structure within the chamber.2. The method according to claim 1 , wherein said gas comprises a plurality of oxygen carrying precursors.3. The method according to claim 1 , further comprising controlling a gas pressure to provide substantially uniform growth conditions at the entire surface of the structure claim 1 , at a given time.4. The method according to claim 1 , further comprising controlling the gas flow such that a resulting concentration of oxygen is substantially uniform for the entire ...

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Номер записи: 54
14-03-2019 дата публикации

Thermally assisted negative electron affinity photocathode

Номер: US20190080875A1
Автор: Kenneth A. Costello, Michael Jurkovic, Verle W. Aebi, Xi Zeng
Принадлежит: Intevac Inc

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

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Номер записи: 55
24-03-2016 дата публикации

Friction Welding Of X-Ray Tube Components Using Intermediate Filler Materials

Номер: US20160086760A1
Автор: Allen Donald Robert, Hebert Michael Scott, Poquette Ben David, Rogers Kirk Alan, Steinlage Gregory Alan, Szugye Michael Louis
Принадлежит:

A structure and associated process for joining dissimilar materials to form various components of an x-ray tube is illustrated that utilizes one or more intermediate or interfacial filler material members positioned between the primary welding or mating surfaces of the base material components to be joined. The use of the interfacial or intermediate filler material preserves the multiple benefits of friction welding, as well as enabling the joining of highly dissimilar material components, decreasing the required joining temperature, and providing increased microstructural control of the resulting well or joint. 1. An assembly adapted for use with an x-ray tube , the assembly comprising:a) a first component formed of a first material and having a first mating surface thereon;b) a second component formed of a second material and having a second mating surface thereon, the second mating surface defining a space with the first mating surface; andc) an intermediate member disposed within the space between the first mating surface and the second mating surface.2. The assembly of wherein the first component and second component are formed from different materials.3. The assembly of wherein the first component is formed of a refractory metal.4. The assembly of wherein the first component is formed of a stainless steel.5. The assembly of wherein the first component is formed of a low thermal conductivity metal.6. The assembly of wherein the first component is an anode.7. The assembly of wherein the second component is selected from the group consisting of a shaft and a sleeve.8. The assembly of wherein the first component is formed of a refractory metal and the second component is formed of a low thermal conductivity alloy.9. The assembly of wherein the first component is a first portion of a shaft.10. The assembly of wherein the second component is a second portion of the shaft.11. The assembly of wherein the intermediate filler material is a brazing material.12. The ...

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Номер записи: 56
23-03-2017 дата публикации

ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME

Номер: US20170084417A1
Автор: KANG Dongsu, KIM Ilhwan, LEE Changsoo, Lee Donggu, PARK Shanghyeun, Sung Jaekyung, YU Euna
Принадлежит:

Disclosed are an electron emitting device using graphene and a method for manufacturing the same. The electron emitting device includes a metal holder having at least one slot, at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and including an emitter supporting member and a graphene emitter attached onto the emitter supporting member, an insulation layer provided on the first surface of the metal holder, and a gate electrode provided on the insulation layer and including a gate supporting member and a graphene gate attached onto the gate supporting member. 1. An electron emitting device comprising:a metal holder having at least one slot;at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and comprising an emitter supporting member and a graphene emitter attached onto the emitter supporting member;an insulation layer provided on the first surface of the metal holder; anda gate electrode provided on the insulation layer and comprising a gate supporting member and a graphene gate attached onto the gate supporting member.2. The electron emitting device of claim 1 , wherein the graphene emitter is provided perpendicularly to the first surface of the metal holder.3. The electron emitting device of claim 2 , wherein the graphene emitter is provided at an edge of the emitter supporting member.4. The electron emitting device of claim 3 , wherein the emitter supporting member comprises a metal film having an emitter groove at an edge thereof claim 3 , andwherein the graphene emitter is attached onto the metal film to cover the emitter groove.5. The electron emitting device of claim 3 , wherein the emitter supporting member comprises a metal mesh claim 3 , andwherein the graphene emitter is attached onto the metal mesh.6. The electron emitting device of claim 1 , wherein the gate supporting member comprises a metal film having a gate hole claim 1 , andwherein the graphene ...

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Номер записи: 57
31-03-2016 дата публикации

COMPACT MEDICAL X-RAY IMAGING APPARATUS

Номер: US20160089102A1
Автор: Liu Xiaojun, Saito Norio, Suzuki Ryoichi, Wang Bo
Принадлежит: TSUKUBA TECHNOLOGY CO., LTD.

The present invention provides a compact medical X-ray imaging apparatus, which is a portable X-ray imaging apparatus capable of capturing clear X-ray images while maintaining low radiation exposure. The compact medical X-ray imaging apparatus comprises of: a carbon nanostructure triode cold cathode X-ray tube that radiates X-rays; an X-ray image sensor that captures an image of X-rays that pass through a patient; The first detector that detects the X-ray radiation dose and is positioned between the carbon nanostructure triode cold cathode X-ray tube and the X-ray image sensor, while out of the X-ray irradiation area for the imaging sensor; the second detector that detects the X-ray dose and is positioned in the center on one side of the X-ray image sensor frame; the third detector that detects the X-ray dose and is positioned on the other side of the X-ray image sensor frame facing to the second detector with the detection surface of the image sensor in between the second and third detector; a power supply which supplies a negative and a positive high-voltage pulse to the cathode and anode of the carbon nanostructure triode cold cathode X-ray tube respectively; and an X-ray imaging controller which acquires detection data from the first detector, second detector and third detector in addition to the distance from the carbon nanostructure triode cold cathode X-ray tube to the X-ray image sensor, calculates the X-ray radiation dose and amount of decay, determines the optimum X-ray dose for the patient and the voltage of the carbon nanostructure triode cold cathode X-ray tube, controls the pulse number and pulse width of the high-voltage pulse of the carbon nanostructure triode cold cathode X-ray tube, as well as the voltage of the cathode and the anode with feedback control means. 2. The compact medical X-ray imaging device according to claim 1 , whereinbased on detection results of the first detector, the current decrement of the carbon nanostructure triode cold ...

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Номер записи: 58
21-03-2019 дата публикации

Carbon nanotube electron emitter, method of manufacturing the same and x-ray source using the same

Номер: US20190088437A1
Автор: Cheol Jin Lee, Jun-Soo Han, Sang Heon Lee
Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

The present disclosure provides a method of manufacturing a carbon nanotube electron emitter, including: forming a carbon nanotube film; performing densification by dipping the carbon nanotube film in a solvent; cutting an area of the carbon nanotube film into a pointed shape or a line shape; and fixing the cutting area of the carbon nanotube film arranged between at least two metal members to face upwards with lateral pressure.

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Номер записи: 59
01-04-2021 дата публикации

CARBON NANOTUBE FIELD EMITTER AND PREPARATION METHOD THEREOF

Номер: US20210094827A1
Автор: FAN SHOU-SHAN, GUO XUE-WEI, Liu Peng, MA LI-YONG, QIAN LI, WANG FU-JUN, WANG YU-QUAN, ZHANG CHUN-HAI, ZHOU DUAN-LIANG
Принадлежит:

A carbon nanotube field emitter comprises at least two electrodes and at least one graphitized carbon nanotube structure. The at least one graphitized carbon nanotube structure comprises a first end and a field emission end. The first end is opposite to the field emission end. The first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons. 1. A carbon nanotube field emitter , comprising:at least two electrodes and at least one graphitized carbon nanotube structure, wherein the at least one graphitized carbon nanotube structure comprises a first end and a field emission end, the first end is opposite to the field emission end, the first end is fixed between the at least two electrodes, and the field emission end is exposed from the at least two electrodes and configured to emit electrons.2. The carbon nanotube field emitter of claim 1 , wherein a density of the graphitized carbon nanotube structure is larger than or equal to 1.6 g/m.3. The carbon nanotube field emitter of claim 1 , wherein the field emission end comprises a plurality of protrusions and a plurality of burrs.4. The carbon nanotube field emitter of claim 1 , wherein the graphitized carbon nanotube structure comprises a plurality of carbon nanotube drawn films stacked with each other.5. The carbon nanotube field emitter of claim 4 , wherein an angle between an aligned directions of carbon nanotubes in two adjacent carbon nanotube drawn films ranges from about 0 degrees to about 30 degrees.6. The carbon nanotube field emitter of claim 4 , wherein the angle between an aligned directions of carbon nanotubes in the two adjacent carbon nanotube drawn films is 0 degrees.7. The carbon nanotube field emitter of claim 4 , wherein each carbon nanotube drawn film comprises a plurality of carbon nanotubes claim 4 , and the plurality of carbon nanotubes are arranged parallel to a surface of a carbon nanotube drawn ...

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Номер записи: 60
19-03-2020 дата публикации

METAL ENCAPSULATED PHOTOCATHODE ELECTRON EMITTER

Номер: US20200090895A1
Автор: Delgado Gildardo R., GARCIA Rudy F., Hill Frances, Ioakeimidi Katerina, Lopez Lopez Gary V.
Принадлежит:

A photocathode structure, which can include one or more of CsTe, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, or a metal, has a protective film on an exterior surface. The protective film includes one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, or an alloy thereof. The protective film can have a thickness from 1 nm to 10 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope. 1. An electron emitter comprising:{'sub': '2', 'a photocathode structure that includes one or more of CsTe, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, or a metal; and'}a protective film disposed on an exterior surface of the photocathode structure, wherein the protective film includes one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, or an alloy thereof.2. The electron emitter of claim 1 , further comprising:a substrate;a second protective film between the substrate and the photocathode structure, wherein the second protective film includes one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, or an alloy thereof.3. The electron emitter of claim 2 , wherein the substrate is one or more of quartz claim 2 , sapphire claim 2 , UV fused silica claim 2 , CaF claim 2 , or MgF.4. The electron emitter of claim 1 , further comprising a substrate disposed on an opposite side of the photocathode structure from the exterior surface claim 1 , wherein the protective film encapsulates the photocathode structure and is disposed between the photocathode structure and the substrate claim 1 , and wherein the substrate is one or more of quartz claim 1 , sapphire claim 1 , UV fused silica claim 1 , CaF claim 1 , or MgF.5. The electron emitter of claim 4 , further comprising a voltage source that applies a voltage to the protective film.6. The electron emitter of claim 1 , wherein the photocathode structure includes CsTe or CsKTe and the protective film includes one ...

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Номер записи: 61
06-04-2017 дата публикации

NANOTUBE-NANOHORN COMPLEX AND METHOD OF MANUFACTURING THE SAME

Номер: US20170096338A1
Автор: YUDASAKA Masako, YUGE Ryota
Принадлежит: NEC Corporation

An object of the present invention is to provide a nanotube-nanohorn complex having a high aspect ratio, also having high dispersibility, having controlled diameter, and having high durability at a low cost. According to the present invention, a carbon target containing a catalyst is evaporated with a laser ablation method to synthesize a structure including both of a carbon nanohorn aggregate and a carbon nanotube. 1. A method of manufacturing a nanotube-nanohorn complex , the method comprising evaporating a carbon target containing a catalyst with a laser ablation method to synthesize a structure including both of a carbon nanohorn aggregate and a carbon nanotube.2. A method of manufacturing a nanotube-nanohorn complex , the method comprising evaporating a carbon target containing a catalyst with a laser ablation method to synthesize a structure in which a carbon nanotube grows from the catalyst , which is surrounded by a carbon nanohorn aggregate.3. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanohorns comprise one of a dahlia-like form claim 1 , a bud-like form claim 1 , a seed-like form claim 1 , and a petal-like form.4. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has a single layer claim 1 , and the carbon nanotube has a diameter of 0.4 nm to 4 nm.5. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has two layers claim 1 , and the carbon nanotube has an inside diameter of 0.4 nm to 20 nm and an outside diameter of 0.7 nm to 22 nm.6. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the carbon nanotube has multiple layers claim 1 , and the carbon nanotube has an inside diameter of 0.4 nm to 200 nm and an outside diameter of 0.7 nm to 500 nm.7. The method of manufacturing a nanotube-nanohorn complex as recited in claim 1 , wherein the catalyst of the ...

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Номер записи: 62
01-04-2021 дата публикации

PLASMONIC PHOTOCATHODE EMITTERS

Номер: US20210098223A1
Автор: Belousov Sergei, Delgado Gildardo R., GONZALEZ Miguel, Hill Frances, Ioakeimidi Katerina, Iskandarova Inna M., Knizhnik Andrey, Lopez Lopez Gary V., Potapkin Boris
Принадлежит:

A photocathode emitter includes a transparent substrate, a photocathode layer, and a plasmonic structure array disposed between the transparent substrate and the photocathode layer. The plasmonic structure array is configured to operate at a wavelength from 193 nm to 430 nm. The plasmonic structure array can be made of aluminum. An electron beam can be generated from a light beam directed at the plasmonic structure array of the photocathode emitter. 1. A photocathode emitter comprising:a transparent substrate;a photocathode layer; anda plasmonic structure array disposed between the transparent substrate and the photocathode layer, wherein the plasmonic structure is configured to operate at a wavelength from 193 nm to 430 nm.2. The photocathode emitter of claim 1 , wherein the photocathode layer includes one or more of CsTe claim 1 , CsKTe claim 1 , GaAs claim 1 , GaN claim 1 , CsI claim 1 , CsBr claim 1 , or an AlGaN(P) alloy.3. The photocathode emitter of claim 1 , wherein the transparent substrate includes one or more of ultraviolet fused silica claim 1 , CaF claim 1 , quartz claim 1 , sapphire claim 1 , MgF claim 1 , or LiF.4. The photocathode emitter of claim 1 , wherein the plasmonic structure array is fabricated of aluminum.5. The photocathode emitter of claim 1 , wherein the plasmonic structure array defines a bullseye pattern.6. The photocathode of claim 5 , wherein the plasmonic structure array has a central aperture diameter from 50 nm to 100 nm.7. The photocathode emitter of claim 1 , wherein the plasmonic structure array defines a C-aperture.8. The photocathode of claim 7 , wherein the C-aperture has an aperture width from 39 nm to 200 nm.9. The photocathode emitter of claim 1 , further comprising a cap layer disposed on a side of the photocathode layer opposite the plasmonic structure array.10. The photocathode emitter of claim 9 , wherein the cap layer includes ruthenium.11. A method comprising:directing a light beam at a photocathode emitter that ...

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Номер записи: 63
01-04-2021 дата публикации

Self-assembled helical slow-wave structures for high-frequency signals

Номер: US20210099142A1
Автор: Abhishek Bhat, Daniel Warren van der Weide, Francesca Cavallo, Matthew McLean Dwyer, Max G. Lagally
Принадлежит: University of New Mexico UNM, WISCONSIN ALUMNI RESEARCH FOUNDATION

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

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Номер записи: 64
03-07-2014 дата публикации

Ion source with cathode having an array of nano-sized projections

Номер: US20140183348A1
Автор: Harold Pfutzner, Jani Reijonen, Luke Perkins
Принадлежит: Schlumberger Technology Corp

An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

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Номер записи: 65
26-03-2020 дата публикации

VACUUM CHANNEL TRANSISTOR STRUCTURES WITH SUB-10 NANOMETER NANOGAPS AND LAYERED METAL ELECTRODES

Номер: US20200098534A1
Автор: Smith Joshua T., Wunsch Benjamin
Принадлежит:

A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure. 1. A method of forming a semiconductor device , the method comprising:forming an emitter electrode and a collector electrode in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;forming a channel in the dielectric layer so as to traverse the nanogap; andforming a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.2. The method of claim 1 , wherein a dielectric material is formed on a global backgate.3. The method of claim 1 , wherein the emitter electrode and the collector electrode are formed on a high-k dielectric material.4. The method of claim 3 , wherein the high-k dielectric material is formed on a local bottom gate.5. The method of claim 1 , wherein the emitter electrode comprises an emitter tip opposing a collector tip of the collector electrode such that the nanogap is formed between the emitter and collector tips.6. The method of claim 5 , wherein the emitter tip comprises the layers.7. The method of claim 6 , wherein the collector tip comprises the layers.8. The method of claim 5 , wherein the layers comprise at least one low workfunction material interposed in a high workfunction material.9. The method of claim 1 , wherein the layers comprise one or more low workfunction layers and one or more high workfunction layers.10. ...

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Номер записи: 66
26-03-2020 дата публикации

SYSTEM AND METHOD FOR DEPTH-SELECTABLE X-RAY ANALYSIS

Номер: US20200098537A1
Автор: Kirz Janos, Yun Wenbing
Принадлежит:

A system for x-ray analysis includes at least one x-ray source configured to emit x-rays. The at least one x-ray source includes at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source includes Si x-ray emission line x-rays. The system further includes at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays. 1. A system for x-ray analysis , the system comprising:at least one x-ray source configured to emit x-rays, the at least one x-ray source comprising at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source, at least some of the x-rays emitted from the at least one x-ray source comprising Si x-ray emission line x-rays; andat least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.2. The system of claim 1 , wherein the Si x-ray emission line x-rays comprise Si Kαx-ray emission line x-rays.3. The system of claim 1 , wherein the at least one x-ray source further comprises at least one second sub-source on or embedded in the at least one thermally conductive substrate claim 1 , the at least one second sub-source configured to generate x-rays in response to electron bombardment of the at least one second sub-source claim 1 , the at least one second sub-source comprising at least one material different from silicon carbide claim 1 , at least some of the x-rays emitted from the at least one x-ray source comprising x-ray emission line x-rays of the at ...

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Номер записи: 67
21-04-2016 дата публикации

METHOD FOR PREPARING A MOLYBDENUM DISULFIDE FILM USED IN A FIELD EMISSION DEVICE

Номер: US20160108521A1
Автор: Li Han, Qian He, Wu Huaqiang, YUAN Shuoguo
Принадлежит:

The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoOpowder to generate a gaseous MoO; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoSfilm obtained is good. 1. A method for preparing a molybdenum disulfide film used in a field emission device , comprising:providing a sulfur vapor;{'sub': 3', '3', 'x, 'blowing the sulfur vapor into a reaction chamber having a substrate and MoOpowder, so as to make the MoOpowder react with the sulfur vapor to generate a gaseous MoOwhich deposits on the substrate, in which x is 2≦x<3;'}{'sub': 'x', 'feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature, so as to make the sulfur vapor and the MoOform a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically.'}2. The method according to claim 1 , wherein the predetermined reaction temperature ranges from 600° C. to 900° C.3. The method according to claim 1 , wherein the predetermined reaction time ranges from 5 minutes to 30 minutes.4. The method according to claim 1 , wherein the sulfur vapor is obtained by sublimating sulfur powder.5. The method ...

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Номер записи: 68
19-04-2018 дата публикации

IMAGE INTENSIFIER BLOOM MITIGATION

Номер: US20180108509A1
Автор: Styonavich Stephen
Принадлежит: L-3 Communications Corporation-Insight Technology Division

Image intensifiers may include a photocathode that emits photoelectrons in proportion to the rate photons impact the photocathode. The photoelectrons are multiplied using a microchannel plate that includes a plurality of microchannels. Photoelectrons are scattered by the microchannel plate when the photoelectrons strike the surface of the microchannel plate rather than enter one of the microchannels. Electron scatter within an image intensifier results in a halo or bloom around bright or luminous objects. Halo or bloom may be minimized by reducing the electron scatter within the image intensifier. Deposition of an anti-scattering layer on the surface of the microchannel plate within the image intensifier can absorb photoelectrons that fail to enter a microchannel and may thus reduce the incidence of halo or bloom. 1. A reduced bloom effect image intensifier , comprising:a photocathodea phosphor screen;a microchannel plate disposed between the photocathode and the phosphor screen, the microchannel plate having a first surface oriented toward the photocathode, a transversely opposed second surface oriented toward the phosphor screen, and a plurality of microchannels fluidly coupling the first surface and the second surface, the microchannel plate including:an anti-scattering layer, the anti-scattering layer deposited across at least a portion of the first surface of the microchannel plate and extending a distance into each of the plurality of microchannels, wherein the anti-scattering layer includes at least one low-Z material.2. The image intensifier of claim 1 , further comprising an input electrode disposed across at least a portion of the first surface between the first surface and the and anti-scattering layer.3. The image intensifier of claim 2 , further comprising an output electrode disposed across at least a portion of the second surface and oriented toward the phosphor screen.4. The image intensifier of claim 3 , further comprising a high secondary emission ...

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Номер записи: 69
11-04-2019 дата публикации

PHOTOCATHODE DESIGNS AND METHODS OF GENERATING AN ELECTRON BEAM USING A PHOTOCATHODE

Номер: US20190108964A1
Автор: Delgado Gildardo R., GARCIA Rudy F., Hill Frances, Ioakeimidi Katerina, Romero Michael E.
Принадлежит:

A photocathode can include a body fabricated of a wide bandgap semiconductor material, a metal layer, and an alkali halide photocathode emitter. The body may have a thickness of less than 100 nm and the alkali halide photocathode may have a thickness less than 10 nm. The photocathode can be illuminated with a dual wavelength scheme. 1. A photocathode comprising:{'b': '100', 'a body fabricated of a wide bandgap semiconductor material, wherein the body has a first surface and a second surface opposite the first surface, and wherein the body has a thickness between the first surface and the second surface of less than nm;'}a metal layer disposed on the first surface; and{'b': '10', 'an alkali halide photocathode emitter disposed on the second surface, wherein the alkali halide photocathode has a thickness less than nm.'}2. The photocathode of claim 1 , wherein the metal layer includes one or more of ruthenium claim 1 , iridium claim 1 , platinum claim 1 , or gold.3. The photocathode of claim 2 , wherein the metal layer includes an alloy of ruthenium and platinum.4. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaN.5. The photocathode of claim 4 , wherein the alloy of InGaN is an alloy of InGaN and GaN.6. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of AlGaN.7. The photocathode of claim 6 , wherein the alloy of AlGaN is an alloy of AlGaN and GaN.8. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes an alloy of InGaP.9. The photocathode of claim 8 , wherein the alloy of InGaP is an alloy of InGaP and GaP.10. The photocathode of claim 1 , wherein the wide bandgap semiconductor material includes at least one of GaN and GaP.11. The photocathode of claim 1 , wherein the alkali halide photocathode includes one or more of CsI claim 1 , CsBr claim 1 , or CsTe.12. The photocathode of claim 1 , further comprising a cap layer disposed on the ...

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Номер записи: 70
11-04-2019 дата публикации

RUTHENIUM ENCAPSULATED PHOTOCATHODE ELECTRON EMITTER

Номер: US20190108966A1
Автор: Delgado Gildardo R., GARCIA Rudy F., Hill Frances, Ioakeimidi Katerina, Romero Michael E.
Принадлежит:

A photocathode structure, which can include an alkali halide, has a protective film on an exterior surface of the photocathode structure. The protective film includes ruthenium. This protective film can be, for example, ruthenium or an alloy of ruthenium and platinum. The protective film can have a thickness from 1 nm to 20 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope. 1. An electron emitter comprising:a photocathode structure; anda protective film disposed on an exterior surface of the photocathode structure, wherein the protective film includes ruthenium.2. The electron emitter of claim 1 , wherein the photocathode structure includes an alkali halide.3. The electron emitter of claim 2 , wherein the alkali halide includes CsBr or CsI.4. The electron emitter of claim 1 , wherein the photocathode includes a ruthenium layer on a side of the photocathode structure opposite from the protective film.5. The electron emitter of claim 1 , wherein the photocathode includes a metal layer on a side of the photocathode structure opposite from the protective film.6. The electron emitter of claim 1 , wherein the protective film includes an alloy of ruthenium and platinum.7. The electron emitter of claim 1 , wherein the protective film has a thickness from 1 nm to 20 nm.8. The electron emitter of claim 1 , wherein the protective film is free of pinholes in at least an emitting area of the photocathode structure.9. The electron emitter of claim 1 , wherein the protective film is free of bubbles and inclusions in at least an emitting area of the photocathode structure.10. The electron emitter of claim 1 , wherein the protective film has imperfections only with a diameter or length dimension less than 1 nm.11. The electron emitter of claim 1 , wherein the protective film has fewer than 10impurities over an emitting area of the photocathode structure.12. The electron emitter of claim 11 , wherein the impurities include carbon ...

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Номер записи: 71
28-04-2016 дата публикации

Cold field electron emitters based on silicon carbide structures

Номер: US20160118214A1
Автор: Fred Sharifi, Henry Lezec, Myung-Gyu Kang
Принадлежит: National Institute of Standards and Technology (NIST), University of Maryland at Baltimore

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm 2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

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Номер записи: 72
26-04-2018 дата публикации

Method for manufacturing nanostructures for a field emission cathode

Номер: US20180114666A1
Автор: CARLSSON Jan-Otto, NIKONOVA Olesya, TIRÉN Jonas
Принадлежит: LIGHTLAB SWEDEN AB

The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode. 1. A method for forming a plurality of ZnO nanostructures for a field emission cathode , the method comprising the steps of:providing a growth substrate;providing a growth solution comprising a Zn-based growth agent, said growth solution having a pre-defined initial pH-value at room temperature;arranging said growth substrate in said growth solution;increasing said pH value of said growth solution to reach a nucleation phase forming nucleation sites on said substrate;decreasing said pH value to transition from said nucleation phase to a growth phase;growing said nanostructures for a predetermined growth-time; andincreasing said pH value to transition from said growth phase to a tip-formation phase.2. The method according to claim 1 , wherein said step of increasing said pH value to initiate a nucleation phase comprises heating said growth solution to a first temperature.3. The method according to claim 2 , wherein said step of increasing said pH value to transition from said growth phase to said tip-formation phase comprises decreasing said temperature of said growth solution to a second temperature claim 2 , lower than said first temperature.4. The method according to claim 1 , wherein said predefined ...

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Номер записи: 73
27-04-2017 дата публикации

NANOPARTICLE-TEMPLATED LITHOGRAPHIC PATTERNING OF NANOSCALE ELECTRONIC COMPONENTS

Номер: US20170117112A1
Автор: Mankin Max N., Pan Tony S.
Принадлежит:

Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein. 1. A method comprising:fabricating an array of nanoscale field emitters on a substrate;depositing a layer of dielectric material on the nanoscale field emitters;depositing a sacrificial layer on the layer of dielectric material; anddepositing a grid on the sacrificial layer, wherein a distance between the nanoscale field emitters and the grid is on a sub-micron scale.2. The method of wherein the sacrificial layer is a spin/spray-coated resist or organic.3. The method of wherein the sacrificial layer has a thickness that is substantially between 25-200 nm.4. The method of wherein depositing a sacrificial layer on the layer of dielectric material includes:spinning the sacrificial layer; anddry etching or milling it such that a thickness of the sacrificial layer corresponds to a height of the nanoscale field emitters.5. The method of wherein dry etching or milling includes at least one of oxygen plasma etching and argon ion bombardment.6. The method of further comprising:removing the sacrificial layer.7. The method of wherein removing the sacrificial layer includes:removing the sacrificial layer via wet or dry etching.8. The method of wherein the grid is fabricated with pinholes claim 6 , and wherein removing the sacrificial layer includes passing an etchant material through the pinholes.9. A method comprising:depositing a resist on a substrate;patterning the resist by removing portions of the resist in a series of regions;depositing a dielectric material on the substrate in the series of regions in which the resist has been removed;removing the resist; anddepositing a grid on the ...

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Номер записи: 74
07-05-2015 дата публикации

Distributed, field emission-based x-ray source for phase contrast imaging

Номер: US20150124934A1
Автор: Berthold KP Horn, Luis Fernando Velasquez-Garcia, Rajiv Gupta, Richard Lanza, Tayo Akinwande
Принадлежит: Berthold KP Horn, Luis Fernando Velasquez-Garcia, Rajiv Gupta, Richard Lanza, Tayo Akinwande

An x-ray source for use in Phase Contrast Imaging is disclosed. In particular, the x-ray source includes a cathode array of individually controlled field-emission electron guns. The field emission guns include very small diameter tips capable of producing a narrow beam of electrons. Beams emitted from the cathode array are accelerated through an acceleration cavity and are directed to a transmission type anode, impinging on the anode to create a small spot size, typically less than five micrometers. The individually controllable electron guns can be selectively activated in patterns, which can be advantageously used in Phase Contrast Imaging.

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Номер записи: 75
13-05-2021 дата публикации

ELECTRON-EMITTING ELEMENT

Номер: US20210142973A1
Автор: Kimura Shigeya, YOSHIDA Hisashi
Принадлежит: KABUSHIKI KAISHA TOSHIBA

According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO, PbTiO, Pb(Zr, Ti)O, KNbO, LiNbO, LiTaO, NaWO, ZnO, BaNaNbO, PbKNbO, and LiBO. 1. An electron-emitting element , comprising:a first member including a semiconductor member, the semiconductor member being of an n-type; anda second member including a diamond member, the diamond member being of a p-type and including at least one selected from the group consisting of diamond and graphite,the semiconductor member including at least one selected from the group consisting of a first material, a second material, and a third material,the first material including nitrogen and at least one selected from the group consisting of B, Al, In, and Ga,the second material including at least one selected from the group consisting of ZnO and ZnMgO,{'sub': 3', '3', 'x', '1-x', '3', '3', '3', '3', 'x', '3', '2', '3', '2', '5', '5', '2', '5', '15', '2', '4', '7, 'the third material including at least one selected from the group consisting of BaTiO, PbTiO, Pb(Zr, Ti)O, KNbO, LiNbO, LiTaO, NaWO, ZnO, BaNaNbO, PbKNbO, and LiBO.'}2. The electron-emitting element according to claim 1 , whereinelectrons are emitted according to incident light entering to the electron-emitting element.3. The electron-emitting element according to claim 2 , whereina peak wavelength of ...

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Номер записи: 76
13-05-2021 дата публикации

ELECTRON EMITTER AND METHOD OF FABRICATING SAME

Номер: US20210142975A1
Автор: Chen Zhongwei, DOU JUYING, Fan Zheng, Kuo Tzu-Yi
Принадлежит:

Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip. 116.-. (canceled)17. An electron emitter comprising:a tip having a planar region with a diameter in a range of 1 micrometer to <10 micrometers; anda work-function-lowering material coated on the tip.18. The electron emitter of claim 17 , wherein the tip comprises single crystal.19. The electron emitter of claim 18 , wherein the single crystal has a crystal orientation of <100>.20. The electron emitter of claim 18 , wherein the single crystal is one of tungsten claim 18 , molybdenum claim 18 , iridium claim 18 , and rhenium.21. The electron emitter of claim 17 , wherein the tip comprises at least one of a transition-metal-carbide compound or a transition-metal-boride compound claim 17 , wherein the transition-metal-carbide compound is a carbide compound of hafnium claim 17 , zirconium claim 17 , tantalum claim 17 , titanium claim 17 , tungsten claim 17 , molybdenum claim 17 , or niobium claim 17 , and claim 17 , wherein the transition-metal-boride compound is a boride compound of hafnium claim 17 , zirconium claim 17 , tantalum claim 17 , titanium claim 17 , tungsten claim 17 , molybdenum claim 17 , niobium claim 17 , or lanthanum.22. The electron emitter of claim 17 , wherein the work-function-lowering material comprises:at least one of an oxide compound of zirconium, hafnium, titanium, scandium, yttrium, vanadium, lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, ytterbium, lutetium, or thorium, orat least one of a nitride compound of zirconium, titanium, niobium, scandium, vanadium, or lanthanum, orat least ...

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Номер записи: 77
27-05-2021 дата публикации

CATHODE STRUCTURE FOR COLD FIELD ELECTRON EMISSION AND METHOD OF FABRICATING THE SAME

Номер: US20210159038A1
Автор: Khursheed Anjam, SHAO Xiuyuan
Принадлежит:

A cathode structure for cold field electron emission and method of fabricating a single-tip cathode structure for cold field electron emission. The cathode structure comprises a pointed cathode wire; and a graphene-based coating on at least a tip of the pointed cathode wire. In a preferred embodiment, graphene is coated on nickel tips by chemical vapour deposition wherein nickel functions as a catalyst for growth of graphene. The cathode structure provides stable cold field emission for electron microscopy and lithography applications and exhibits an ultralow work function value of about 1.1 eV. 1. A cathode structure for cold field electron emission comprising:a pointed cathode wire; anda graphene-based coating on at least a tip of the pointed cathode wire.2. The cathode structure of claim 1 , exhibiting a low work function value of about 1.1 eV.3. The cathode structure of claim 1 , wherein the cathode wire comprises a metal.4. The cathode structure of claim 3 , wherein the metal is in polycrystalline form.5. The cathode structure of claim 3 , wherein the metal comprises one or more of a group consisting of Ni claim 3 , Co claim 3 , Pd claim 3 , Al claim 3 , Cu claim 3 , and Ag.6. The cathode structure of claim 1 , wherein the graphene based coating comprises one or more of a group consisting of graphene claim 1 , graphene oxide (GO) claim 1 , rGO and their derivatives.7. The cathode structure of claim 1 , wherein a radius of the tip is in the range from about 100 to 800 nm.8. The cathode structure of claim 1 , exhibiting a low electric field strength requirement of about 0.5 V/nm.9. A method of fabricating a cathode structure for cold field electron emission claim 1 , the method comprising the steps of:providing a pointed cathode wire; andcoating at least a tip of the pointed cathode wire with a graphene-based material.10. The method of claim 9 , wherein the coating is performed by chemical vapor deposition claim 9 , CVD.11. The method of claim 10 , wherein a ...

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Номер записи: 78
23-04-2020 дата публикации

Electron source and production method therefor

Номер: US20200126750A1
Автор: Hiromitsu CHATANI, Isao Sugimoto, Shimpei Hirokawa, Toshiyuki Ibayashi, Toshiyuki Morishita
Принадлежит: Denka Co Ltd

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

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Номер записи: 79
03-06-2021 дата публикации

VACUUM CHANNEL TRANSISTOR STRUCTURES WITH SUB-10 NANOMETER NANOGAPS AND LAYERED METAL ELECTRODES

Номер: US20210166908A1
Автор: Smith Joshua T., Wunsch Benjamin
Принадлежит:

A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure. 1. A semiconductor device comprising:an emitter electrode and a collector electrode formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;a channel formed in the dielectric layer so as to traverse the nanogap; anda top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.2. The semiconductor device of claim 1 , wherein a dielectric material is formed on a global backgate underlying the channel.3. The semiconductor device of claim 1 , wherein the emitter electrode and the collector electrode are formed on a high-k dielectric material.4. The semiconductor device of claim 3 , wherein the high-k dielectric material is formed on a local bottom gate.5. The semiconductor device of claim 1 , wherein the emitter electrode comprises an emitter tip opposing a collector tip of the collector electrode such that the nanogap is formed between the emitter and collector tips.6. The semiconductor device of claim 5 , wherein the emitter tip comprises the layers.7. The semiconductor device of claim 5 , wherein the collector tip comprises the layers.8. The semiconductor device of claim 5 , wherein the layers comprise at least one low workfunction material interposed in a high workfunction material.9. The semiconductor device of claim 1 , wherein the layers ...

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Номер записи: 80
26-05-2016 дата публикации

FERROELECTRIC EMITTER FOR ELECTRON BEAM EMISSION AND RADIATION GENERATION

Номер: US20160148773A1
Автор: Einat Moshe
Принадлежит: ARIEL - UNIVERSITY RESEARCH AND DEVELOPMENT COMPANY, LTD.

Disclosed are methods and devices suitable for generating electron beams and pulses of radiation. Specifically, in some disclosed embodiments, multiple emitting electrodes of a ferroelectric emitter are sequentially activated, generating a relatively long electron beam pulse that is substantially a series of substantially consecutive short electron beam pulses generated by the sequentially-activated individual emitting electrodes. 1. A ferroelectric emitter , comprising:at least two mutually-separated distal emitting electrodes.2. The ferroelectric emitter of claim 1 , wherein said emitting electrodes are coplanar.3. The ferroelectric emitter of claim 1 , comprising:an emitter body of ferroelectric material having a proximal face and a distal face;at least one proximal electrode contacting said proximal face of said emitter body; andsaid at least two mutually-separated distal emitting electrodes contacting said distal face of said emitter body.4. The ferroelectric emitter of claim 1 , further comprising:a triggering assembly, configured to sequentially activate said distal emitting electrodes.59-. (canceled)10. An electron gun claim 1 , comprising:a vacuum tube; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'functionally associated with said vacuum tube, a ferroelectric emitter of .'}11. The electron gun of claim 10 , configured for sequential activation of said distal emitting electrodes.12. The electron gun of claim 11 , said sequential activation enabling the generation of a series of substantially consecutive short electron beam pulses claim 11 , each pulse generated by activation of a said distal emitting electrode.1319-. (canceled)20. A radiation-generating device claim 11 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a ferroelectric emitter of .'}2122-. (canceled)23. A method for generating an electron beam claim 11 , comprising:a) providing a ferroelectric emitter having at least two mutually-separated distal emitting electrodes ...

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Номер записи: 81
10-06-2021 дата публикации

ELECTRON EMISSION ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: US20210175039A1
Автор: ABEYSINGHE RESHAN MADUKA, Iwamatsu Tadashi, Kosaka Tomohiro, SHINKAWA KOHJI, Tsujino Kazuya
Принадлежит:

An electron emission element of the present invention includes a lower electrode, a surface electrode, and a silicone resin layer disposed between the lower electrode and the surface electrode, wherein the surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer. 1. An electron emission element comprising:a lower electrode;a surface electrode;a silicone resin layer disposed between the lower electrode and the surface electrode, whereinthe surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer.2. The electron emission element according to claim 1 , wherein the silver layer is a silver sputtering layer or a silver-deposited film.3. The electron emission element according to claim 1 , whereina thickness of the silicone resin layer is 0.5 μm or more and 1.25 μm or less, anda thickness of the silver layer is larger than 5 nm and 30 nm or less.4. The electron emission element according to claim 1 , wherein the surface electrode is a laminated electrode in which the silver layer and a gold layer or a platinum layer are laminated.5. The electron emission element according to claim 4 , wherein a thickness of the gold layer or a thickness of the platinum layer is 10 nm or more and 20 nm or less.6. The electron emission element according to claim 1 , further comprising a substrate claim 1 , whereinthe lower electrode is disposed on the substrate, the silicone resin layer is disposed on the lower electrode, andthe surface electrode is disposed on the silicone resin layer.7. A method for manufacturing an electron emission element comprising:forming a silicone resin layer on a lower electrode; andforming a silver layer on the silicone resin layer so as to be in contact with the silicone resin layer, whereinthe forming the silicone resin layer includes coating a silicone resin coating agent substantially not containing silver particles on the lower electrode.8. The method for ...

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Номер записи: 82
10-06-2021 дата публикации

Methods and Apparatus For Controlling Contaminant Deposition on a Dynode Electron-Emissive Surface

Номер: US20210175043A1
Автор: Shanley Toby, Sheils Wayne
Принадлежит:

Components of scientific analytical equipment, and particularly to methods for extending the operational lifetime or otherwise improving the performance of dynodes used in electron multipliers. The method includes: (i) increasing the secondary electron yield of a dynode and/or (ii) decreasing the rate of degradation of electron yield of a dynode, by exposing a dynode electron-emissive surface to an electron flux under conditions causing electron-impact induced removal of a contaminant deposited on the dynode electron-emissive surface. The conditions may be selected such that the electron-mediated removal is enhanced relative to a contaminant deposition process so as to provide a net decrease in the rate of contaminant deposition and/or a decrease in the amount of contaminant present on the dynode electron-emissive surface. 1. A method for (i) increasing a secondary electron yield of a dynode and/or (ii) decreasing a rate of degradation of electron yield of the dynode , the method comprising:exposing a dynode electron-emissive surface of the dynode to an electron flux under conditions causing electron-impact induced removal of a contaminant deposited on the dynode electron-emissive surface.2. The method of claim 1 , wherein the conditions are such that the electron-mediated removal is enhanced relative to a contaminant deposition process so as to provide a net decrease in the rate of contaminant deposition and/or a decrease in the amount of contaminant present on the dynode electron-emissive surface.3. The method of claim 2 , wherein the conditions are such that the electron-mediated removal has a higher efficiency than the contaminant deposition process.4. The method of wherein the electron-mediated removal is reliant at least in part on a removal reactant or precursor thereof claim 2 , the removal reactant or precursor thereof being either inherently present on or about the dynode electron-emissive surface claim 2 , or deliberately introduced on or about the dynode ...

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Номер записи: 83
25-05-2017 дата публикации

Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus

Номер: US20170148603A1
Автор: AITA Kazuo, ARAMAKI Fumio, KOZAKAI Tomokazu, MATSUDA Osamu, OBA Hiroshi, SUGIYAMA Yasuhiko, YASAKA Anto
Принадлежит:

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus. 1. A gas field ion source comprising:an iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation, the iridium tip being an emitter which is configured to emit an ion beam;an ion source chamber which accommodates the emitter;a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber;an extraction electrode which is configured to ionize the gas to generate ions of the gas and apply a voltage for extracting the ions of the gas from the emitter; anda temperature control section which is configured to cool the emitter.2. The gas field ion source according to claim 1 ,wherein a main component of the gas is at least any one of hydrogen, nitrogen, oxygen, helium, neon, argon, krypton, and xenon, or a mixture of at least any of these gases.3. The gas field ion source according to claim 1 ,wherein a main component of the gas is nitrogen.4. The gas field ion source according to claim 3 ,wherein a purity of nitrogen which is the main component of the gas is 99% or more.5. A focused ion beam apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the gas field ion source according to ; and'}a control section which is configured to form a focused ion beam with the ions of the gas generated in the gas field ion source and irradiate a sample with the focused ion beam ...

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Номер записи: 84
25-05-2017 дата публикации

VACUUM INTEGRATED ELECTRONIC DEVICE AND MANUFACTURING PROCESS THEREOF

Номер: US20170148604A1
Автор: KIM Myung Sung, Patti Davide Giuseppe
Принадлежит:

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device. 1. A vacuum integrated electronic device comprising:an anode region of conductive material;an insulating region on top of the anode region;a cavity extending through the insulating region and having a sidewall; anda cathode region having a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity.2. The device according to claim 1 , wherein the cathode region is a metal layer including a closing portion integral to the tip portion claim 1 , the closing portion extending on top of the insulating region and closing the cavity claim 1 , the tip portion extending in the cavity from the closing portion.3. The device according to claim 1 , wherein the tip portion has a triangular cross-section with a vertex pointing towards the anode region.4. The device according to claim 1 , wherein the tip portion comprises a plurality of tip ends having each a generally half-conical shape and a tip pointing towards the anode region.5. The device according to claim 4 , wherein the tip portion has only two tip ends.6. The device to claim 1 , wherein the tip portion extends circumferentially along the sidewall of the cavity and has a single tip end.7. The device according to claim 1 , wherein the insulating region comprises a plurality of insulating layers; separated from each other by at least one conductive layer; the device further comprising a side insulating layer extending on the sidewall of the cavity between the insulating region and the tip portion.8. The device ...

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Номер записи: 85
07-06-2018 дата публикации

RADIATION GENERATING TUBE, RADIATION GENERATING APPARATUS, RADIOGRAPHY SYSTEM AND MANUFACTURING METHOD THEREOF

Номер: US20180158641A1
Автор: Sato Yasue, Ueda Kazuyuki, Yamazaki Koji
Принадлежит:

The present invention relates to a radiation generating tube. The radiation generating tube includes an envelope including an insulating tubular member having at least two openings, a cathode connected to one of the openings of the insulating tubular member, and an anode connected to the other of the openings of the insulating tubular member. At least one of the cathode and the anode and the insulating tubular member are bonded at a bonded portion with an electrically conductive bonding member; and the bonded portion bonded with the electrically conductive bonding member is coated with a dielectric layer. 1. A radiation generating apparatus comprising: an envelope including an insulating tube having a pair of tube ends, a cathode connected to one of the pair of tube ends, and an anode connected to the other of the pair of tube end;', 'an electron emitting source connected to the cathode;', 'a target connected to the anode; and', 'a conductive bonding member bonded between the insulating tube and at least any one of the cathode and the anode;, 'a radiation generating tube includinga conductive container grounded and accommodating the radiation generating tube;insulating liquid filled in a rest space between the conductive container and the radiation generating tube; anda dielectric member located outside of the insulating tube in the conductive container,wherein the dielectric member and the insulating liquid are located between the conductive bonding member and the conductive container.2. The radiation generating apparatus according to claim 1 , wherein the dielectric member relaxes electric field concentration at a bonded region bonded between the insulting tube and at least any one of the cathode and the anode via the conductive bonding member.3. The radiation generating apparatus according to claim 1 , wherein the conductive bonding member is shaped annularly and the dielectric member is shaped annularly.4. The radiation generating apparatus according to claim 1 ...

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Номер записи: 86
22-09-2022 дата публикации

ELECTRON BEAM DEVICES WITH SEMICONDUCTOR ULTRAVIOLET LIGHT SOURCE

Номер: US20220301804A1
Автор: Gaska Remigijus
Принадлежит:

An electron beam source includes a photocathode or an anode attached to an ultraviolet semiconductor light source (SULS), or an anode incorporated between a SULS and a photocathode, and an electron beam gun using the electron beam source and electron beam pumped target. In certain embodiments the target is an electron beam pumped light emitting device. The photocathode surface is essentially parallel to the surface of the SULS which is a Light Emitting Diode, Superluminescent Diode, or Laser Diode. Different embodiments of the present disclosure include a photocathode directly attached to the SULS surface or having an intermediate transition layer or layers between the photocathode and the emitter. The transition layer includes a substrate on which the SULS is fabricated and/or a layer to facilitate light extraction from the SULS to the photocathode. The active region of the electron beam pumped light emitter is placed in the path of photoelectron flow to excite non-equilibrium electron-hole pairs and generate light emission at a wavelength or wavelengths determined by the energy band structure of the active region. 1. A device comprising:a semiconductor light source;a photocathode attached to the semiconductor light source;a cathode electrode attached to the photocathode; andan anode terminal separated from the photocathode by a vacuum gap;wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.2. A device comprising:a semiconductor light source for emitting light;a transition layer at least partially transparent to the light of the semiconductor light source and attached to the semiconductor light source;a photocathode attached to the transition layer;a cathode electrode attached to the photocathode; andan anode terminal separated from the photocathode by a vacuum gap;wherein the semiconductor light source generates photoelectrons at a surface of the photocathode.3. A device comprising:a semiconductor light source;an anode ...

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Номер записи: 87
24-06-2021 дата публикации

ELECTRON EMISSION SOURCE AND METHOD FOR MAKING THE SAME

Номер: US20210193425A1
Автор: FAN SHOU-SHAN, Liu Peng, YANG XIN-HE
Принадлежит:

An electron emission source is provided. The electron emission source comprises a first electrode, an insulating layer, and a second electrode, The first electrode, the insulating layer, and the second electrode are successively stacked with each other. the second electrode is a graphene layer, and the graphene layer is an electron emission end to emit electron. A thickness of the graphene layer ranges from about 0.1 nanometers to about 50 nanometers. 1. An electron emission source , comprising a first electrode , an insulating layer , and a second electrode successively stacked in a said order , the second electrode is a graphene layer , a thickness of the graphene layer ranges from approximately 0.1 nanometers to approximately 50 nanometers , and the graphene layer defines an electron emission end to emit electrons.2. The electron emission source of claim 1 , wherein the graphene layer comprises at least one graphene film claim 1 , the graphene film consists of a single-layer graphene.3. The electron emission source of claim 1 , wherein the graphene layer consists of a single-layer graphene claim 1 , and the single-layer graphene has a thickness of one single carbon atom.4. The electron emission source of claim 1 , wherein a material of the insulating layer is alumina claim 1 , silicon nitride claim 1 , silicon oxide claim 1 , tantalum oxide claim 1 , or boron nitride.5. The electron emission source of claim 4 , wherein the material of the insulating layer is boron nitride claim 4 , and a thickness of the insulating layer ranges from approximately 0.3 nanometers to approximately 0.6 nanometers.6. The electron emission source of claim 1 , wherein the electron emission source consists of the first electrode claim 1 , a boron nitride layer claim 1 , and the graphene layer successively stacked in the said order.7. A method for making an electron emission source claim 1 , comprising:depositing an insulating layer on a surface of a first electrode, wherein the ...

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Номер записи: 88
24-06-2021 дата публикации

Electron source and production method therefor

Номер: US20210193427A1
Автор: Hiromitsu CHATANI, Isao Sugimoto, Shimpei Hirokawa, Toshiyuki Ibayashi, Toshiyuki Morishita
Принадлежит: Denka Co Ltd

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

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Номер записи: 89
29-09-2022 дата публикации

Photo-cathode for a vacuum system

Номер: US20220310349A1
Автор: Masahiko Iguchi, Motohiro Suyama, Peter Uhd Jepsen, Simon Lehnskov LANGE
Принадлежит: Danmarks Tekniskie Universitet, Hamamatsu Photonics KK

This invention concerns a photo-cathode for a vacuum system, wherein the photo-cathode is configured for receiving electromagnetic radiation having an incoming wavelength and for emitting electrons in response thereto. The photo-cathode comprises a conducting structure having a geometry, the geometry comprising a tip section. The tip section is adapted to provide field enhancement, β, when the conducting structure is illuminated with the electromagnetic radiation, wherein β is greater than about 102. The photo-cathode further comprising a substrate, the substrate being or comprising a dielectric substrate, the substrate supporting the conducting structure.

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Номер записи: 90
21-05-2020 дата публикации

A FIELD EMISSION CATHODE STRUCTURE FOR A FIELD EMISSION ARRANGEMENT

Номер: US20200161071A1
Автор: Demir Hilmi Volkan, HOLLMAN Patrik, Sharma Vijay Kumar, TAN Swee Tiam, TIRÉN Jonas
Принадлежит:

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system. 1. A field emission cathode structure for a field emission arrangement , comprising:a substrate having a first and a second side;a getter element arranged on top of the first side of the substrate and covering a portion of the first side of the substrate;an at least partly permeable structure arranged on top of at least a portion of the getter element; andan electron emission source arranged to cover a portion of the at least partly permeable structure,wherein the getter element is sandwiched between the substrate and the at least partly permeable structure.2. The field emission cathode structure according to claim 1 , wherein the electron emission source comprises a plurality of nanostructures.3. The field emission cathode structure according to claim 2 , wherein the plurality of nanostructures comprises at least one of ZnO nanostructures and carbon nanotubes.4. The field emission cathode structure according to claim 3 , wherein the plurality of ZnO nanostructures is adapted to have a length of at least 1 um.5. (canceled)6. The field emission cathode structure according to claim 1 , wherein the at least partly permeable structure encapsulates the getter element.7. The field emission cathode structure according to claim 1 , wherein the getter element is formed by arranging a layer of a getter material onto the portion of the substrate.8. The field emission cathode structure according to claim 7 , wherein the getter material is non-evaporable getter material.9. The field emission ...

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Номер записи: 91
21-05-2020 дата публикации

FAST SPIN-POLARIZED ELECTRON SOURCE

Номер: US20200161072A1
Автор: Batelaan Herman, Brunkow Evan, Gay Timothy J., Jones Eric
Принадлежит:

Systems and methods for obtaining fast, spin-polarized electrons from an edge or tip or cusp of a target material, e.g., a sharp GaAs crystal edge or tip, or a cusp, which naturally incorporates optical reversibility. A source of fast spin-polarized electrons may include a target material including a sharp tip or tip portion or a sharp edge or a cusp, the tip or tip portion including at least two intersecting edges, and a pulsed light source configured to emit one or more light pulses focused on the sharp tip or tip portion or the sharp edge or the cusp to thereby induce emission of spin-polarized electrons from the sharp tip or tip portion or the sharp edge or the cusp of the target material. 1. A source of fast spin-polarized electrons , comprising:a target material comprising a sharp tip or a sharp edge or a cusp, the sharp tip comprising at least two intersecting edges; anda pulsed light source configured to emit light pulses focused on the sharp tip or the sharp edge or the cusp to thereby induce emission of spin-polarized electrons from the sharp tip or the sharp edge or the cusp of the target material.2. The source of fast spin-polarized electrons according to claim 1 , wherein the target material comprises GaAs.3. The source of fast spin-polarized electrons according to claim 1 , wherein the target material comprises ZnSe claim 1 , or GaAsP claim 1 , or GaAs doped with Zn or Cd.4. The source of fast spin-polarized electrons according to claim 1 , wherein the pulsed light source comprises a pulsed laser.5. The source of fast spin-polarized electrons according to claim 1 , wherein the pulsed light source comprises a pulsed laser that emits laser pulses each having a duration of between about 10 fs and about 0.1 ps.6. The source of fast spin-polarized electrons according to claim 1 , wherein the pulsed light source comprises a pulsed laser that emits laser pulses having a wavelength of between about 750 nm to about 850 nm or lower.7. The source of fast spin- ...

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Номер записи: 92
21-05-2020 дата публикации

INTEGRATED X-RAY SOURCE

Номер: US20200161075A1
Автор: CAO Peiyan, LIU Yurun
Принадлежит:

Disclosed herein is an X-ray source, comprising: a cathode in a recess of a first substrate; a counter electrode on a sidewall of the recess, configured to cause field emission of electrons from the cathode; and a metal anode configured to receive the electrons emitted from the cathode and to emit X-ray from impact by the electrons on the metal anode. 1. An X-ray source , comprising:a cathode in a recess of a first substrate;a counter electrode on a sidewall of the recess, configured to cause field emission of electrons from the cathode; anda metal anode configured to receive the electrons emitted from the cathode and to emit X-ray from impact by the electrons on the metal anode.2. The X-ray source of claim 1 , wherein the cathode comprises a plurality of carbon nanotubes.3. The X-ray source of claim 1 , wherein the counter electrode is a continuous ring or dotted ring around the sidewall.4. The X-ray source of claim 1 , further comprising a shield electrode between the counter electrode and the metal anode claim 1 , the shield electrode configured to repel the electrons facing the metal anode.5. The X-ray source of claim 4 , wherein the shield electrode is a continuous ring or dotted ring around the sidewall.6. The X-ray source of claim 1 , wherein the first substrate comprises silicon or silicon oxide.7. The X-ray source of claim 1 , wherein the metal anode comprises one or more metals selected from a group consisting of tungsten claim 1 , molybdenum claim 1 , rhenium claim 1 , copper and combinations thereof.8. The X-ray source of claim 1 , further comprising a second substrate bonded to the first substrate claim 1 , wherein the second substrate covers the recess.9. The X-ray source of claim 8 , wherein the metal anode is supported by the second substrate.10. The X-ray source of claim 9 , wherein the metal anode is on a side of the second substrate away from the cathode.11. The X-ray source of claim 1 , wherein the cathode comprises an array of carbon nanotubes. ...

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Номер записи: 93
18-09-2014 дата публикации

Field emission devices and methods for making the same

Номер: US20140273706A1
Автор: Neal R. Rueger
Принадлежит: Micron Technology Inc

The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

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Номер записи: 94
15-07-2021 дата публикации

Thermionic emission device and method for making the same

Номер: US20210217572A1
Автор: Kai-Li Jiang, Peng Liu, Shou-Shan Fan, Xin-He Yang
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.

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Номер записи: 95
20-06-2019 дата публикации

BIPOLAR GRID FOR CONTROLLING AN ELECTRON BEAM IN AN X-RAY TUBE

Номер: US20190189384A1
Автор: Lewis Christopher M., Woodman Colton B.
Принадлежит:

A bipolar grid may be positioned between a cathode and an anode. The bipolar grid may receive a positive grid voltage that corresponds to a voltage in an electric field between the cathode and the anode such that the grid does not interfere with an electron beam generated by an electron emitter of the cathode. The bipolar grid may receive a negative grid voltage to isolate the electron emitter such that the electron beam does not reach the anode. 1. An X-ray tube comprising:a cathode including an electron emitter;an anode spaced apart from the cathode;a grid positioned between the cathode and the anode; anda power supply electrically coupled to the grid, wherein the power supply is configured to provide a positive grid voltage and a negative grid voltage to the grid.2. The X-ray tube of claim 1 , wherein the positive grid voltage corresponds to a voltage in the electric field between the cathode and the anode such that the grid does not interfere with an electron beam generated by the electron emitter.3. The X-ray tube of claim 1 , wherein the negative grid voltage reduces electron density of an electron beam generated by the electron emitter.4. The X-ray tube of claim 1 , wherein the negative grid voltage isolates the electron emitter such that an electron beam does not reach the anode.5. The X-ray tube of claim 1 , wherein the negative grid voltage is between 0 and −10 kilovolts (kV) and the positive grid voltage is between 0 and 10 kV.6. The X-ray tube of claim 1 , wherein the grid defines an opening sized and shaped to permit electrons generated by the electron emitter to pass therethrough.7. The X-ray tube of claim 1 , wherein the electron emitter comprises a planar emitter or a coil filament.8. The X-ray tube of claim 1 , wherein the grid is electrically isolated from the cathode.9. The X-ray tube of claim 1 , wherein the voltage of the X-ray tube is between 1 and 500 kilovolts (kV).10. A bipolar grid positioned between a cathode and an anode claim 1 , the ...

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Номер записи: 96
20-06-2019 дата публикации

PHOTOCATHODE ASSEMBLY OF VACUUM PHOTOELECTRONIC DEVICE WITH A SEMI-TRANSPARENT PHOTOCATHODE BASED ON NITRIDE GALLIUM COMPOUNDS

Номер: US20190189408A1
Автор: "GOLDBERG Iosif Isaakovich", "LOKTIONOV Vladimir Ilich", DOLGIKH Aleksandr Vladimirovich
Принадлежит:

A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C. 1. A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode , said photocathode assembly comprising an input window made in the form of a sapphire disk , layers of a heteroepitaxial structure of gallium nitride compounds as the semi-transparent photocathode , said layers being grown on an inner surface of the input window , and an element for coupling the input window with a housing of the vacuum photoelectronic device , said element being vacuum-tightly attached to an outer surface of the input window at its periphery , wherein the element for coupling the input window with the housing of the vacuum photoelectronic device is made of a bimetal in which a layer being not in contact with the outer surface of the input window consists of a material having a linear thermal expansion coefficient different from the linear thermal expansion coefficient of sapphire by not more than 10% in the temperature range from 20° C. to 200° C.2. The photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode ...

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Номер записи: 97
20-06-2019 дата публикации

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE , FIELD EMISSION DEVICE

Номер: US20190190013A1
Автор: Chang Jaejun, Choi Jaeman, Ku Junhwan, LI Xiangshu, PARK JONGHWAN, Son InHyuk
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A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Номер записи: 98
20-06-2019 дата публикации

Composite, electrochemical active material composite using the composite, electrode including the composite or electrochemical active material composite, lithium battery including the electrode , field emission device including the composite, biosensor including the composite , semiconductor device including the composite , and thermoelectric device including the composite

Номер: US20190190014A1
Автор: Inhyuk Son, Jaejun Chang, Jaeman Choi, Jonghwan Park, Junhwan KU, Xiangshu LI
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A composite including: at least one selected from a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

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Номер записи: 99
20-06-2019 дата публикации

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY

Номер: US20190190015A1
Автор: Chang Jaejun, Choi Jaeman, Ku Junhwan, LI Xiangshu, PARK JONGHWAN, Son InHyuk
Принадлежит:

A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0 Подробнее

Номер записи: 100