Encapsulation construction for light emitting device and manufacturing method thereof

Mode of execution

The invention discloses a light-emitting device package structure and method for manufacturing the same. In order to of the present invention more detailed and complete description of, can be matched with the following description and by reference to Figure 2 to fig. 6.

Please refer to fig. 2 to fig. 4, shown in the same in accordance with the invention a preferred embodiment is a light-emitting device encapsulated structure of the cross section of the production process. In an exemplary embodiment, the encapsulated structure of luminescent device 220 (please first with reference to Figure 4) at the time, can provide packaging substrate 200, wherein the packaging substrate 200 can be a substrate with good thermal conductivity, to facilitate the light-emitting device package structure 220 heat dissipation. Package substrate 200 can be made of for example alumina substrate, aluminum nitride substrate or diamond coated substrate. Next, the packaging substrate 200 surface 202 formed on one or a plurality of 1st gasket 204, and one or a plurality of 2nd gasket 206. In one embodiment, gasket 1st 204 and 2nd gasket 206 using ungolden of the material of the material, the better (cu) or silver (Ag), copper metal.

Furthermore, using one or more deposition way to form a joint lug electrically 1st 208, with one or more of the joint lug electrically 2nd 210, corresponding to the base plate respectively arranged in the package 200 of the above 1st gasket 204 and 2nd gasket 206 is, 1st 2nd electrically different from them electrically. For example, when the 1st to n-type when the electrical behavior, can be electrically 2nd p-shaped; and when the 1st p-electrically to, 2nd electrically can be n-type. In this exemplary embodiment, the electrical behavior of 1st to n-type, is electrically 2nd p-shaped. In one embodiment, joint lug electrically 1st 208 electrically 2nd joint lug and 210 respectively connected with the package substrate the number of 200 1st on the gasket 204 and 2nd gasket 206 is the same as the number of. In some other embodiment, as shown in Figure 6 of a light-emitting device package structure 226, a plurality of groups of electrical joint lug 1st 208 the electrical behavior of the joint lug 2nd 210 electrically connected in parallel, the electrical joint lug 1st 208 electrically 2nd joint lug and 210 and the number of the sum of the package substrate 200 the upper gasket 205 may not be the same as the total number. In this exemplary embodiment, the package substrate 200 is provided with a joint lug electrically 1st 208 and a joint lug electrically 2nd 210, as shown in Figure 2. 1st electrical engagement projection 208 of the joint lug electrically 2nd 210 of the material are selected from the thermoelectric material. In some embodiments, these thermoelectric material selected from a tellurium (Te), antimony (Sb), bismuth (Bi), selenium (Se) and the above-mentioned material of the alloy of the group, for example bismuth telluride (Bi₂ Te₃) and its alloy, tellurium stibium (Sb₂ Te₃) and its alloy, and selenium bismith (Bi₂ Se₃) and its alloy thermoelectric semiconductor material. The electrical behavior of the joint lug 1st 208 the electrical behavior of the joint lug 2nd 210 time, can be selectively used, for example, ion implantation method, the electrical behavior of the 1st and 2nd electrical dopant, such as n-type and p-type dopants, are implanted joint lug electrically 1st 208 electrically 2nd joint lug and 210 in.

At the same time, provides a light-emitting device chip 212, wherein the light emitting device chip 212 can be, for example, light emitting diode, high power light-emitting diode, laser diode and photoelectric device. As shown in Figure 3, light-emitting device chip 212 surface 214 is provided with one or a plurality of 1st electrically electrode pad 216, with one or more of the 2nd electrically electrode pad 218. Light-emitting element chip 212 electrically 1st on the electrode pad 216 and 2nd electrically electrode pad 218 usually with the quantity and the position of the package substrate 200 of the joint lug electrically 2nd 210 the electrical behavior of the joint lug 1st 208 corresponding to the number and position, to facilitate the subsequent chip face-down bonding. In one embodiment, electrically 1st electrode pad 216 and 2nd electrically electrode pad 218 using ungolden the material of the material, can be made of a metal such as copper or silver. Because the 1st electrically electrode pad 216, 2nd electrically electrode pad 218, the electrical joint lug 1st 208, joint lug electrically 2nd 210, 1st gasket 204 and 2nd gasket 206 of the material can be of the material of the ungolden, therefore the amount of gold can be greatly reduced.

Next, the welding steps of flip-chip can be carried out, the light emitting device chip 212 electrically 1st together with the electrode pad 216 and 2nd electrically electrode pad 218 flip-chip on the package substrate 200 surface 202 on, and the light emitting device chip 212 surface 214 and the package substrate 200 surface 202 to the face, and the light emitting device chip 212 of electrically 1st electrode pad 216 and 2nd electrically electrode pad 218 respectively corresponding to engagement in the package substrate 200 above the joint lug electrically 2nd 210 the electrical behavior of the joint lug 1st 208 on, and substantially completed packaging structure of the light emitting device 220 made of, as shown in Figure 4.

Please refer to fig. 5, shown the same in accordance with the present invention a preferred embodiment of the light-emitting device is a schematic diagram of the operation of the packaging structure. The light-emitting device package structure 220 and the direct-current power supply 222 is electrically connected with, current 224 sequentially first through the package substrate 200 and 1st gasket 204 the electrical behavior of the joint lug 1st 208, by the 2nd in order electrically electrode pad 218, light-emitting device chip 212 and 1st electrically electrode pad 216 the electrical behavior of the joint lug 2nd 210, then the 2nd gasket 206 and flow to the package substrate 200, back to the power source 222, as shown in Figure 5.

The package structure of the light emitting device 220 in, electrical joint lug 1st 208 electrically 2nd joint lug and 210 by the thermoelectric material. Therefore, when the DC current from the 1st gasket 204 flows into the n-type of joint lug electrically 1st 208 of the 2nd type p electrically electrode pad 218 of the, joint lug electrically 1st 208 can absorb the light emitting device chip 212 of the heat energy generated by, and transferred to the heat dissipation base plate below the 200, as indicated by arrow 228 in the direction shown by. On the other hand, when the electric current from electrical 1st n-type of electrode pad 216 into p-type of joint lug electrically 2nd 210 and to the 2nd gasket 206, the, joint lug electrically 2nd 210 also can absorb the light emitting device chip 212 of the heat energy generated by, and transferred to the heat dissipation base plate below the 200, as indicated by arrow 228 in the direction shown by. Therefore, packaging structure of the whole light-emitting device 220 can generate as the efficacy of pn-type thermoelectric refrigerator, and effectively the light emitting device chip 212 end of the heat energy onto the package substrate 200, thereby greatly promoting the chip of the luminescent device 212 of the light-emitting efficiency.

By the above-mentioned exemplary embodiments of the present invention can be known, the advantages of the present invention is because the luminous device packaging structure and manufacturing method thereof using flip-chip packaging chip is fixed, thus, in addition to the thickness of the package body can be effectively reduced, promotion of the light emitting device can be heat dissipation capability of the packaging structure.

By the above-mentioned exemplary embodiments of the present invention can be known, another advantage of this invention is that because the luminous device packaging structure and manufacturing method thereof using p-type and n-type thermoelectric semiconductor material as a joint lug flip-chip packaging, and provides the function of pn-type refrigerator. Therefore, in the current input into the light-emitting device at the same time a package structure, the heat can be effectively conducted to the heat-dissipating substrate to the outside, and the desulfurization, light emitting device further improving the heat dissipating ability of the package structure. So, the whole light-emitting device package structure can bear greater drive current, and may significantly enhance the luminous efficiency of the light emitting device, so as to obtain better light-emitting effect.

By the above-mentioned exemplary embodiments of the present invention can be known, another advantage of this invention is that because the luminous device packaging structure and manufacturing method thereof can be made of copper, silver, or other metals, to as a substitute, welding electrode, therefore, can greatly reduce the amount of gold, and then can reduce the cost of manufacture.

Although the invention has been to a preferred embodiment disclosed above, however, its and non-in order to limit the invention, the invention can also have other various embodiments, without departing from the invention spirit and its real circumstances, the technical personnel familiar with the field according to the present invention can be various corresponding change and deformation, but these relative changes and deformation should be to the right of the invention the attached scope of protection requested.