Polymer plane nano-channel production method
Technical Field The invention belongs to the micro-chip manufacturing control accepts the class Technical Field, relates to a method for preparing the nano channel, used in the life science, medical, the field of analytical chemistry, and the like. Background Art micro accepts the class control chip technology is the rapid development of the present high-tech and readjustment of the one of the leading edge area of science and technology, are the future life science, chemical science and information technology platform of the important scientific development. The control chip micro accepts the class micromation, the advantages of the integration and portability in the field of biomedical, pharmaceutical synthetic screening, environmental monitoring and protection, quarantine, judicial identification, biological warfare agent detection, and many other fields of application of the prospect of providing the extremely broad. Nano-channel production technology is micro- accepts the class control chip technology and the basis of, and is of great importance to many experts and scholars. The cross section of the channel in the width and depth of the two direction, size is less than 100 nanometer, referred to as two-dimensional nano-channel; such as only in the one direction of less than 100 nanometer, and another direction and greater than 100 nanometer, is referred to as plane nano-channel. The reported polymer plane nano-channel production method is mainly composed of:a laser or particle beam direct writing, nanometer hot-pressing or hot-forming, the sacrificial layer etching method. Laser or particle beam direct writing the need of expensive special equipment; nano hot-pressing or hot-forming the same require special equipment, but also production of expensive pattern transfer template; sacrificial layer etching the required equipment is relatively simple, however, often complicated process, making cycle is long. Content of the invention The purpose of this invention is to overcome the defects of the existing preparation method, to provide a expensive special equipment is not required, the operation is simple, fast, low cost method for making polymer plane of the nano channel. The invention provides a method for making polymer plane of the nano channel, is a standard of the ultraviolet lithographic process and chemical wet etching process and a combination of plasma etching technology, but also plasma etching a low price, and simple and convenient operation of the plasma cleaning machine, realize polymer etching does not need to purchase expensive and complex operation of the reaction ion etching (Reactive ion etching, RIE) or inductive coupling plasma (Inductively coupled plasma, ICP) etching equipment. The technical proposal of the invention is:a method for making polymer plane of the nano channel, first standards-based ultraviolet photolithography and chemical wet etching technology in the polymer substrate of the outlet width is micron-sized metal mask pattern, then using a plasma cleaning machine to the polymer is exposed to the oxygen plasma etching, by setting the etching time, will be able to accurately control etching depth polymer nano-channel; the manufacturing method is as follows: (1) by utilizing the magnetron sputtering station on the polymer substrate sputtering a layer of a thickness of about 80 nanometer a copper thin film; (2) use the copper thin film surface further spin-coating a layer of positive photoresist, and the 55 the hot plate [...]goes forward to dry 1 hour; (3) by using an ultraviolet lithography machine exposure of photoresist 30 seconds, to once again after developing the 55 hot plate [...]on after-bake 1 hour; (4) with photoresist as the masking layer, the concentration is 2.5% solution of nitric acid in the exposed copper thin film of corrosion, get copper masking pattern; (5) of the photoresist to the whole ultraviolet exposure 120 seconds, then put into a concentration of 0.5% in the sodium hydroxide solution, removing the photoresist; (6) with the copper masking pattern the polymer substrate is placed in a plasma cleaning machine, oxygen plasma etching; wherein, plasma cleaning machine of radio-frequency power is set up as 60W, the chamber pressure is set to a 200 Pa, by setting the etching time, will be able to accurately control the depth of etching of the nano channel; (7) use of concentration is 2.5% nitric acid solution to remove copper masking pattern, so as to obtain the polymer plane nano-channel. The advantages of this invention can utilize the standard ultraviolet photolithography and chemical wet etching technology and an ordinary plasma cleaning phase matching can be achieved making polymer plane nano-channel, the whole manufacturing process is simple, short period, the cost is low. Description of drawings Figure 1 is a thin film sputter copper, Figure 2 is the photo etching, Figure 3 is the chemical corrosion of copper thin film, Figure 4 is to remove the photoresist, Figure 5 is a plasma etching polymer, Figure 6 is to copper thin film. Wherein: 1-polymer substrate, 2-copper thin film, 3-photoresist, a-photoresist pattern, copper masking pattern-b, c-polymer nano-channel. Figure 7 is the etching depth of the nano channel etching time relationship graph, wherein: abscissa as the time, in minutes, for the longitudinal depth, the unit is a nanometer. Figure 8 is a scanning electron microscope photograph of the nano channel, wherein: c-polymer nano-channel. Mode of execution The following technical proposal and Figure with detailed descriptions of embodiments of the present invention. As Figure 1, 2, 3, 4, 5 and 6 illustrated, the Beijing creates Wiener technology Company limited of the type of production JS3X-80B magnetron sputter table is specially designed, on the polymer substrate 1 sputtering a layer of a thickness of about 80 nanometer of copper thin film 2 ; the German The type of production Company MicroTec Delta 80RC further of, the surface of the copper thin film of spin-coating a layer of AZ Company produces Electronic Materials AZ MiR701 of the type of the positive photoresist, the rotational speed of spin coater for 2600r/min, and the 55 the hot plate [...]goes forward to dry 1 hour, then in the photoresist 3 is covered with the mask, by using a German The type of production Company MicroTec MA/BA6 carving machine of ultraviolet light, the photoresist 3 exposure 30 seconds, after developing is obtained in the developing solution is a micrometer range of the width of a photoresist pattern, and once again placed in 55 the hot plate [...]on after-bake 1 hour; to photoresist as the masking layer, the concentration is 2.5% nitric acid solution to the copper film exposed 2 to corrosion, get copper mask pattern b; the photoresist 3 whole ultraviolet exposure 120 seconds, then put into a concentration of 0.5% in the sodium hydroxide solution, removing the photoresist 3 ; with copper masking pattern b will be the polymer substrate 1 is put into the China electronic science and technology Corporation of the type produced by the Institute for XIII DQ-500 plasma cleaning machine, oxygen plasma etching, etching the polymer nano-channel c; the concentration is 2.5% nitric acid solution of the copper masking pattern 2 etching, to obtain polymer nano-channel c. The plasma cleaning machine of radio-frequency power and chamber pressure, by adjusting the etching time, will be able to accurately control the depth of etching of the nano channel. In a micro- accepts the class control chip commonly used polymer material-polymethyl methacrylate (PMMA), for example, Figure 7 shows that when the radio frequency power of 60 watts, the chamber pressure is 200 pahi time, the width is 5 microns PMMA nano-channel etch depth of the etch time relationship graph, the average per minute etching speed of about 10 nano meters. Figure 8 is the 9 parallel wide 5 microns deep about 100 nanometers of PMMA nano-channel c. The invention has realized the polymer plane for simple production of the nano channel, does not need to be in order to achieve polymer etching the additional purchase of special expensive equipment, the whole making cycle only need a few hours, and repeated high precision, it is very suitable for the mass of the polymer plane nano-channel, low-cost processing. Experiment proves that, the method is applicable to micro- accepts the class control chip the vast majority of polymer material commonly used, such as PMMA, polycarbonate (PC), polystyrene (PS), COP ( polymer Cyclo-olefin, cycloolefin polymer), and the like. The invention relates to a making method of a polymer planar nano channel, which belongs to the technical field of making micro-nano flow-control chip and is used in the fields of life science, medicine, analytical chemistry, and the like. The making method comprises the following steps: firstly, making a metal masking figure with micron-sized line width on a polymer substrate on the basis of standard ultraviolet lithography and chemical wet method erosion technology; then, carrying out oxygen plasma etching on exposed polymer by means of a plasma cleaning machine and accurately controlling the etching depth of a polymer nano channel through setting etching time; and finally, removing the metal masking figure by means of chemical wet method erosion to obtain the polymer planar nano channel. The making method does not need to purchase reactive ion etching or inductive coupling plasma etching equipment with complex operation and high price in order to realize polymer etching. Moreover, the entire making process of the nano channel has simplicity, short cycle and low cost. 1. A method for making polymer plane of the nano channel, is characterized in that, first of all standards-based ultraviolet photolithography and chemical wet etching technology in the polymer substrate of the outlet width is micron-sized metal mask pattern, then using a plasma cleaning machine to the polymer is exposed to the oxygen plasma etching, by setting the etching time, will be able to accurately control etching depth polymer nano-channel; the manufacturing method is as follows: (1) by utilizing the magnetron sputtering station on the polymer substrate, sputtering a layer thickness is 80 nanometer a copper thin film; (2) use the copper thin film surface further spin-coating a layer of positive photoresist, and the 55 the hot plate [...]goes forward to dry 1 hour; (3) by using an ultraviolet lithography machine exposure of photoresist 30 seconds, to once again after developing the 55 hot plate [...]on after-bake 1 hour; (4) with photoresist as the masking layer, the concentration is 2.5% solution of nitric acid in the exposed copper thin film of corrosion, get copper masking pattern; (5) of the photoresist to the whole ultraviolet exposure 120 seconds, then put into a concentration of 0.5% in the sodium hydroxide solution, removing the photoresist; (6) with the copper masking pattern the polymer substrate is placed in a plasma cleaning machine, oxygen plasma etching; wherein, plasma cleaning machine of radio-frequency power is set up as 60W, the chamber pressure is set to a 200 Pa, by setting the etching time, will be able to accurately control the depth of etching of the nano channel; (7) use of concentration is 2.5% nitric acid solution to remove copper masking pattern, so as to obtain the polymer plane nano-channel.