Vertical cavity surface emitting laser having micro-lens

12-01-2007 дата публикации
Номер:
KR0100667743B1
Автор: 김성진, 이재훈
Принадлежит: 삼성전자주식회사
Контакты:
Номер заявки: 00-00-102058114
Дата заявки: 04-10-2000

[1]

Is roughly vertical cavity surface emitting laser of the existing method also Figure 1 shows a side-looking,

[2]

Also Figure 2 shows a one embodiment of the present invention: an surface emitting laser including micro lens is roughly side-looking,

[3]

2 also also shown in Figure 3 shows a surface emitting laser including micro lens in focusing position adjusted variable region of a light by side shown that,

[4]

Figure 4 shows a other embodiment of the present invention also: an surface emitting laser including micro lens is roughly side-looking.

[5]

<Description of the sign for major part of the drawings >

[6]

100.. substrate 101.. part vertical cavity surface emitting laser

[7]

110,140.. lower and upper reflecting layer 120.. active layer

[8]

130.. high anti -151,155.. top and bottom electrodes

[9]

170,270.. piezoelectric material layer 171,175,271,275.. driving electrode

[10]

190.. microlens

[11]

The present invention refers to vertical cavity surface emitting laser (vertical cavity surface emitting laser) relates to, the light to be emitted to the laser beam more specifically, a microlens side with surface emitting laser including micro lens relates to.

[12]

Generally vertical cavity surface emitting laser semiconductor material layer patterned and thereby a a light entered via the incident surface stacking direction, and to be easily combined with other optical elements, as well as is mounted, a two-dimensional array is manufactured to have an, optical optical signal such interface technology using optical transmission system or source in optical head for recording/reproducing can be application outside as they are.

[13]

Also with a 1, a substrate surface emitting laser of the existing method (10) and, said substrate (10) on a substrate the PTFE polymer film from the structure reflecting layer (11), active layer (12), high anti-(13) and upper reflection layer (14) and, said upper reflection layer (14) on the window (18) are sequentially formed on pattern layer is formed on the electrode (16) and, said substrate (10) is formed on a lower surface of a lower electrode (17) constitution :.

[14]

Said lower reflecting layer (11) and upper reflection layer (14) different refractive index obtained by alternately a compound semiconductor portion of the Bragg twistreflector (DBR: Distributed Bragg Reflector) to, different each of. I.e., said substrate (10) which each of the n, said lower reflecting layer (11) the substrate (10) type such as n type, said upper reflection layer (14) each of the p.

[15]

Said anti-high (13) the, lower electrode (16) (17) applied current through said active layer (12) capable of reversible current flow so that flowing towards center of and guides the flow.

[16]

Said active layer (12) on the, lower electrode (16) (17) on said by current applied in, lower reflecting layer (14) (11) second power supply modules are holes and the electrons subscriber unit or by a combination of. that the area generating light is.

[17]

Said active layer (12) on said light generated from the light, lower reflecting layer (14) (11) while reflected in repeated in its resonance the user and survive light wavelength, the light is survive said window (21) through the light output face.

[18]

In vertical cavity surface emitting laser of the existing method such as said said window (18) through a laser beam of an emitting part has a predetermined insulator material.

[19]

Therefore, said a surface, such as the to, for example, emitting laser, optical cable of optical transfer system when devices emit a single-color light, vertical cavity surface emitting laser in the liquid crystal display for storehouse coupling ones of the optical cable of the order of the pair, a thin copper surface emitting laser between the input of optical cable from an output in an diffuse light having symmetric on the central more regularly treat bunching storehouse..

[20]

Furthermore, light emitted in surface emitting laser light coupling efficiency to maximize a tunneling oxide layer and an optical cable, the aligning process and/or during use is in a surface emitting laser, in bunching lens by a separate adjust the position focusing a bottom surface of a..

[21]

Therefore, optical systems using vertical cavity surface emitting laser of the existing method if the manufacturing time and cost by attaching structure as well as complex by, external surfaces of the concave and the laser beam in vertical cavity surface emitting laser said lens toward an optical axis aligning required to are loaded, optical axis alignment structure is connected to the semiconductor layer. a circular die is heated after quenching.

[22]

The present invention refers to said stored at the slide structure of a cabinet, optical system configuration are used for shifting the focusing lens and the condensing additional means for adjusting position to need not, the laser beam is applied to the output microlens in a progressively adjustable manner on the side position is integrally formed at a part of surface light laser, the heat exchanger..

[23]

said callee opens the folder of his a surface emitting laser including micro lens the present invention according to, semiconductor material layer emits laser beam stacking direction and vertical cavity surface emitting laser for; receiving material which receives the light outgoing from said surface emitting laser for passing an microlenses and the layer is formed to be apart from; said surface emitting laser part positioned between the shelves and the micro lens, said microlenses and the surface emitting laser the space between the variable portion configured to each other; characterized in that including a.

[24]

One aspect of the present invention, a piezoelectric variable region, constructed from a polymer material, said piezoelectric material layer.

[25]

The, said vertical cavity surface emitting laser part, variable region and each of the microlenses is manufactured separately and, only two stainless steel plates or by bonding can be linkage forming reagents.

[26]

In accordance with another aspect of the present invention, said variable region a piezoelectric ceramic piezoelectric material layer, said piezoelectric material layer emitted from the pair of side members are formed in a central portion and that is provided with an opening light..

[27]

The, surface emitting laser said a continuous variable region and other through a of production steps may be formed as.

[28]

Wherein, said variable region consists for more than at least one piezoelectric material layer is preferably not less.

[29]

Furthermore, formed between the surface emitting laser unit has an, types are made electrically independent to insulating layer; is preferably not less is further provided.

[30]

Hereinafter, while in reference drawing with an the present invention according to surface emitting laser including micro lens of. as further described are in the embodiment.

[31]

Also refers to surface 2, one embodiment of the present invention: an surface emitting laser including micro lens a, semiconductor material layer emits laser beam stacking direction for vertical cavity surface emitting laser part (100) and a, said vertical cavity surface emitting laser part (100) that transmit light which receives the light outgoing from the microlens layer is formed to be apart from (190) and a, said vertical cavity surface emitting laser part (100) and a microlens (190) is positioned between the microlens (190) and said surface emitting laser part (100) sets the gap between the electrode consists of a variable part.

[32]

Said surface emitting laser part (100) the, substrate (101) and, substrate (101) on the lower surface the formed lower electrode, and (155) and, substrate (101) on a substrate the PTFE polymer film from the structure reflecting layer (110), active layer (120) and an upper reflecting layer (140) and, upper reflection layer (140) accelerate apparatus has a plurality of laser on except an area for upper electrode electrodes are formed at the display area (151) consists of including.

[33]

Said substrate (101) for example, n doped GaAs, AlGaAs, InAs, InP, GaP, InGaP, InGaAs or GaP of a semiconductor such as and which is material.

[34]

Said lower reflecting layer (110) and upper reflection layer (140) refractive index semiconductor different is obtained by alternately. For example, on said, lower reflecting layer (140) (110) different refractive index AlGaAs layer is formed by stacking in repeated.

[35]

The, also 2 generated as shown in the laser beam is applied to the most upper reflection layer (140) through the light emitting surface of the optical structures, upper reflection layer (140) relatively low reflectivity, lower reflecting layer (110) the upper reflecting layer (140) higher reflectivity 20 is formed so as to. Such a semiconductor compound according to the amount of rice for call condition selection is received from a stack of, said upper reflection layer (140) the lower reflecting layer (110) tolerance less than and shaped such that it has at the both sides of the cut portions reflecting layer (140) the lower reflectivity of reflecting layer (110) can be less than the cell pitch of its. Wherein, said substrate (101) is n a, lower reflecting layer (110) the substrate (101) type such as n type, upper reflection layer (140) is doped to the p each.

[36]

Said upper reflection layer (140) and a lower reflecting layer (110) the, lower electrode by current applied through (151) (155), a sensor part and a control flow, active layer (120) to reflect light generated from the light light its resonance the user said upper reflection layer (140) through. line, geometrically.

[37]

Said active layer (120) on the, lower reflecting layer (140) (110) provided holes and the electrons of the power energy to generates light into an area where single or multiple quantum-well structure, superlattice (super lattice) structure, etc.. Wherein, said active layer (120) of the wavelengths, in order to produce e.g., GaAs, AlGaAs, InGaAs, AlGaAsP and/or be at 500 such as InGaP.

[38]

On the other hand, said upper reflection layer (140) the a part of the region of the upper electrode (160) current applied through anti-a post (130) is further formed on the is preferably not less.

[39]

Said anti-high (130) the upper reflecting layer (140) intermediate perform a preliminary and a (not shown) are stacked and rpm, to surround the prepolymer outer oxide from the exposed to an environment of oxide a oxide insulator i.e., high 16T formed a selective oxidation method such as the proton is formed ion implantation is carried out.

[40]

And said surface light laser unit (100) the, on, lower electrode (151) (155) through a forward bias is applied, said current anti-high (130) the guide is active layer (120) flows through the centers of, on, lower reflecting layer (140) (110) the electromagnetic part, a sensor part and a active layer is crystallized (120) are generated light recombined in. On light is generated, lower reflecting layer (140) (110) between its resonance while auger with a light of specified wavelength the user (a result a laser beam to the light output face) is amplified a survive only the, upper reflection layer (140) is used for transmitting the light the light output face.

[41]

Said microlens (190) has surface light laser unit (100) which receives the light outgoing from the curved lens a convex excite a divergent light focusing (190a) has. Micro lens of this construction (190) has surface light laser unit (100) which receives the light outgoing from the transparent with respect to the laser beam to flat member made of steel melting spot etching or spread control (spot melting) can be formed by.

[42]

Wherein, etching spread control an etching mask with an opening on a flat member (not shown) and is moved to a forging section, flat same etching spread control for the material member bromine that cause (Br2) such as etching agent comprises a PCB in a concentration appropriate for a predetermined time to etchant immersing surface, chemical etch thereby the fermentation is number e.g., bromine diffusion according to etching rate spatially opening of member flat by a difference in the detection the exposed portion is etched etched in a convex shape use principle.

[43]

Such Ag diffusion control etching surface, said surface emitting laser part (100) oscillated in a than the wavelength of the relatively large band gap of said semiconductor material having microlens (190) can be a. Spread control microlens semiconductor material by etching (190) the a technique for manufacturing the, the present applicant is 25th which patent application number 00-5485 call "surface emitting laser including micro lens and manufacturing method (2000 3 wall filing date 2)" and 25th which patent application number 00-2604 call " the basic lens manufacturing method (patent application number 99-5513's local priority, 2000 20 wall filing date 1) to a disclosure. Therefore, here the present invention according to semiconductor material by etching spread control microlens (190) a posture method for producing a dispensed the description.

[44]

Spot melting mounted at a prescribed position in the member a flat manner a strong laser beam irradiating spots the, then, a portion thereof, is gradually cooled surface, surface energy material of a melted portion is minimized while re-arranged in direction bearing formed to a concave use. The, cooling conditions or an melting is connected to a first area, a desired curvature microlens (190) depending on the pre-inputted data (190a). capable of forming a.

[45]

Said such as micro lens (190) has surface light laser unit (100) by focusing a divergent light emitted from the focuses to a predetermined position. Therefore, variable region by vertical cavity surface emitting laser part (100) to a micro lens (190) so, the bu variable the relative positions of the surface emitting laser part (100) light emitted from the light-focusing position connected to each other..

[46]

Said variable accumulates, the details, piezoelectric material layer (170) and at its one end to, driving electrode a pair formed on the upper surface (171) (175) consists of including.

[47]

In one embodiment of the present invention, said piezoelectric material layer (170) the surface emitting laser part (100) that transmit light emitted from the piezoelectric polymer (piezoelectric polymer) e.g., plasma piezoelectric family of PVA (polyvinyl acetate) is preferably not less.

[48]

As piezoelectric, constructed from a polymer material, said piezoelectric material layer (170) is mounted between rotating plates coupled to relatively thereby displacing the displacement, low production cost can be provided a contact point is turned off.

[49]

Wherein, said piezoelectric material layer (170) is formed with at least, and at least one layer. I.e., surface emitting laser the present invention according to a relatively high degree of focusing position small optical requiring the displaced when employed in the system, said piezoelectric material layer (170) is provided with a monolayer.

[50]

While, a relatively high degree of surface emitting laser the present invention according to a large displacement position of focused required optical employed in the system when, said piezoelectric material layer (170) is formed a plurality of layers, and, between the multiple layers connected in parallel electrically is preferably not less. Piezoelectric material layer (170) a piezoelectric material layer amount of displacement of the lever (170) which proportional to thickness of, thick piezoelectric material layer (170) for the displacement of a large when it makes is is an applying voltage to the.. However, the present invention such as piezoelectric material layer (170) which are connected in parallel electrically a plurality of the stack pattern is formed on driven applied voltage small the overall thickness of a matching relation a large displacement thick.

[51]

On the other hand, piezoelectric material layer (170) for that transmit light when piezoelectric polymer, surface emitting laser part (100) which receives the light outgoing from the path of light detector detects a progress state of the necessary opened, said pair of drive electrode transparent electrode such as ITO (171) (175) at the, driving electrode (171) (175) of said piezoelectric material layer (170) of the, extend through the entire upper surface preferably.

[52]

Variable region as a pair for said driving electrode (171) (175) when the circuit has a variable power source and, said driving electrode lower variable region (171) and surface emitting laser part (100) upper electrode (151) between an insulating layer (160) is further provided with, said surface emitting laser part (100) and variable electrically independent of each other, and an adapted to is preferably not less.

[53]

Wherein, said variable region and a surface emitting laser part (100) a common electrodes be utilized to may be a. In this case, said insulating layer (160). unnecessary.

[54]

Configured as said one embodiment of the present invention: an surface emitting laser including micro lens in, vertical cavity surface emitting laser part (100), variable region and microlens (190) the, part of a square-prepared, is coupled only two stainless steel plates or by bonding. Wherein, said vertical cavity surface emitting laser part (100), variable region and microlens (190) continuously made via may be.

[55]

Said configured as a micro lens according to one embodiment of the present invention (190) surface-emitting laser with the operated like the following.

[56]

First, 2, as shown to also, in States that have not been voltage is applied piezoelectric material layer (170) do thickness of, defective are used for shifting the focusing position fo are formed on the second substrate, said pair of drive electrode of high voltage (V) a threshold value is applied on the peripheral surface, piezoelectric material layer (170) and is incremented with do and d in the thickness of the, vertical cavity surface emitting laser part (100) the laser beam in a microlens (190) collected by focusing position f to cause it to in fo varies such.

[57]

By reducing the applied voltage (V), piezoelectric material layer (170) when the buffer usage becomes by d Δ thickness of, vertical cavity surface emitting laser part (100) f light emitted from f close ' is focusing position.

[58]

Vice versa, increasing the applied voltage (V), piezoelectric material layer (170) d Δ thickness of ' below a by, vertical cavity surface emitting laser part (100) emitted from light far than f f " is focusing position.

[59]

And, unless the voltage is applied, piezoelectric material layer (170) do and the thickness of the original thickness, surface emitting laser part (100) is focusing position fo light emitted from.

[60]

Figure 4 shows a also a micro lens according to other embodiment of the present invention (190) is roughly surface-emitting laser with. plane from the appear. Wherein, also 2 the same references substantially the same exhibits and serving the function of same member.

[61]

In the present embodiment, a piezoelectric ceramic (piezoelectric ceramic) variable region consisting of piezoelectric material layer (270) and, said piezoelectric material layer (270) of the, driving electrode a pair formed on the upper surface (271) (275) consists of including.

[62]

The, since the piezoelectric ceramic opaque for light, said piezoelectric material layer (270) the central part the surface emitting laser part (100) for pressing emitted from opening (270a) has a. And, pair of drive electrode (271) (275) the piezoelectric material layer (270) the, of the upper surface electrodes are formed at the display area except for the opening it is preferred that a.

[63]

A piezoelectric ceramic such as said piezoelectric material layer (270) relatively and therefore a fast response (fast response) can be obtained contact point is turned off.

[64]

Wherein, said piezoelectric material layer (270) the one embodiment of the present invention: an piezoelectric material layer (170) is formed with more as well as. I.e., surface light laser according to other embodiment of the present invention a relatively high degree of focusing position small optical requiring the displaced when employed in the system, said piezoelectric material layer (270) is formed with a monolayer. While, according to other embodiment of the present invention surface light laser a relatively high degree of focusing a large displacement position of required optical employed in the system when, said piezoelectric material layer (270) is formed a plurality of layers, and, multiple layers is connected electrically parallel, relatively small voltage is applied relatively thick material layer structure of piezo-a plurality of layers, and (270) is driven with a preferably and is arranged to surround the.

[65]

The present embodiment the first deoxygenator variable region and a surface emitting laser part (100) the one of the present invention as well as taught in the embodiment, common electrodes be utilized to may be a, in this case, surface light laser according to other embodiment of the present invention the insulating layer (160) the system has no 2000.

[66]

Said groove, and at least one other embodiment of the present invention according a micro lens (190) in surface-emitting laser with, surface emitting laser part (100) and variable the piezoelectric ceramic in terms of other through continuous process for may be formed.

[67]

The, said microlens (190) continuously through of production steps said surface emitting laser part (100) and variable element is made integral with or, separately manufactured, and then by bonding said variable element can be integrally joined to.

[68]

Configured as said other embodiment of the present invention: an surface emitting laser including micro lens Figure 2 and 3 in the embodiment described with the cell as in one of the present invention, vertical cavity surface emitting laser part (100) irradiating microlens (190) by focused, are used for shifting the focusing position connected to each other..

[69]

4 also to 2 also taught or more recognition ratio by capturing and referring to as surface light laser according to of the present invention in the embodiment a surface emitting laser part (100) to variable region and microlens (190) is integrated to the surface, such that the emitting laser part (100) which receives the light outgoing from the diffuse light can be displaced in bunching storehouse as well as, additional adjusting means for adjusting the position are used for shifting the focusing focused without can be.

[70]

Therefore, an optical communication system optical fiber the present invention according to surface emitting laser including micro lens surface-etched through CMP, vertical cavity surface emitting laser and optical fiber without a combining hole of the panel from PLS an enough light coupling (not shown) can be obtained as well as, integrated variable region by vertical cavity surface emitting laser part (100) to a micro lens (190) while adjusting the relative positions of the, surface emitting laser light coupling efficiency to optical cable light emitted in a predetermined pitch and a predetermined spiral the, optical axis alignment that has a simple structure and a, .can be reduced significantly number of components.

[71]

Furthermore, the present invention according to a surface emitting laser including micro lens optical signal through free space to send and/or receive a optical signal of interface using the if it is adopted as a, separate condense-pressing method so as to protect, focusing position adjustment current so as, distance between the outputted Image signal cursor degrees of layout freedom, , optical and having a simple structure as well as be easier for and the substrate and, surface emitting laser and/or light, to light-emitting surfaces of different colors compact infrared detector element can be.

[72]

At least one fatty acid, provided a surface emitting laser the present invention according to line, geometrically bunching storehouse but's, and municipal also described, are not limited to, parallel light may be provided with line, geometrically. The present invention according to the microlens (190) are. by having a curvature and has. Parallel light and surface emitting laser the present invention according to a to eject from a beam of various type parts animated optical head requiring such an optical system which may employ, in this case the event of the use of a vertical cavity surface emitting laser of the existing method alternatively collimating lens needless of contact point is turned off.

[73]

Furthermore, the present invention according to above microlens (190) is spread control by etching or spot melting plate includes a convex a lens, has a curved face, a but's, and municipal described which, which the present invention refers to not limited to, said microlens (190) has a concave lens may be curved.

[74]

The, microlens (190) of the concave lens curved for example, isotropic etching and then is formed by using a. Wherein, a semiconductor isotropic etch, at as by methods well known in field, a predetermined portion of member and method for forming fibres [...] material only when the etching process while keeping the material opening, thereof are defined. etched isotropic portion opened.

[75]

Said surface emitting laser the present invention according to such as the front surface of concavely as having micro lenses surface, surface emitting laser part (100) more a divergent light emitted from the, can be emitted by a large angle, variable region micro lens (190) so, the bu variable position of, . electrode is formed on the first diverging light. Therefore, microlens having curved concave lens (190) having surface emitting laser light from the light source the present invention according to short within relatively a larger beam requiring optical system in an efficient can be employed.

[76]

On the other hand, surface emitting laser according to the present invention according to, light output power and/or temperature variations which receives the light outgoing from the surface emitting laser according to the wavelength of the light even when the, part vertical cavity surface emitting laser by variable region (100) and a microlens (190) the relative skew between by adjusting an interval between the, parallel light optimized, light or diverging bunching storehouse can be line, geometrically.

[77]

The present invention according to the a surface emitting laser, vertical cavity surface emitting laser part, variable region and micro-lens in a a processing solution is supplied, optical system configuration are used for shifting the focusing lens and the condensing additional means for adjusting position.-pressing method so as to protect.

[78]

Therefore, the present invention according to a paper discriminator optical systems constituting the surface, optical axis alignment, and that has a simple structure, degrees of layout freedom, as well as increased, is the opening degree depending number of components.



[79]

A micro-lens built-in vertical cavity surface emitting laser (VCSEL), having a VCSEL portion (100) for emitting a laser beam in a direction in which semiconductor material layers are stacked; a micro-lens (190) formed of a material capable of transmitting the laser beam emitted from the VCSEL portion; and an adjusting portion (170) located between the VCSEL portion (100) and the micro-lens (190) for adjusting a distance (d) between the micro-lens and the VCSEL portion. When constructing an optical system with the VCSEL including the VCSEL portion, the adjusting portion, and the micro-lens, there is no need for a separate condensing lens and focusing position adjusting element. In addition, optical alignment structure is simple with increased freedom in arranging elements, and the number of parts required is sharply reduced. <IMAGE>



Semiconductor material layer emits laser beam stacking direction and emitting laser surfaces;

Receiving material which receives the light outgoing from said surface emitting laser for passing an microlenses and the layer is formed to be apart from;

Said surface emitting laser part positioned between the shelves and the micro lens, said microlenses and the surface emitting laser the space between the variable portion configured to each other; including a to characterized by surface emitting laser including micro lens.

According to Claim 1, said variable region a piezoelectric, constructed from a polymer material, to a piezoelectric material characterized by surface emitting laser including micro lens.

According to Claim 2, said vertical cavity surface emitting laser part, variable region and each of the microlenses is manufactured separately and, only two stainless steel plates by bonding host is engaged with the stage characterized by surface emitting laser including micro lens.

According to Claim 1, said variable region a piezoelectric ceramic piezoelectric material layer, said piezoelectric material layer at a center portion light source emitted from the light opening of the link is characterized by surface emitting laser including micro lens.

According to Claim 4, said vertical cavity surface emitting laser and a continuous variable region other through a of production steps coated with a characterized by surface emitting laser including micro lens.

According to Claim 5, said microlens use as bonding by variable region is integrally joined to said to characterized by surface emitting laser including micro lens.

According to Claim 5, said microlens a continuous through of production steps said surface emitting laser and to which is formed integrally with the variable characterized by surface emitting laser including micro lens.

According to one of Claim 1 to Claim 7, piezoelectric material layer contains at least said variable region, and at least one layer for practicing the method comprising a characterized by surface emitting laser including micro lens.

According to one of Claim 1 to Claim 7, formed between the surface emitting laser unit has an, types are made electrically independent to insulating layer; is further provided is characterized by surface emitting laser including micro lens.

According to one of Claim 1 to Claim 7, the said surface emitting laser 221 flat transparent to etching spread control member, formed by etching or isotropic melt spot is characterized by surface emitting laser including micro lens.