ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР НАКЛОННЫМ РЕЗОНАТОРОМ (ППЛНР), И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Полупроводниковый лазер, содержащий: а) нижний отражатель, б) верхний отражатель; и в) резонатор, расположенный между нижним отражателем и верхним отражателем, содержащий активную область, расположенную в указанном резонаторе; при этом резонатор и активная область выполнены с возможностью того, чтобы световое излучение распространялось в резонаторе в направлении, наклоненном и относительно перпендикуляра к поперечной плоскости, и относительно самой поперечной плоскости. 2. Полупроводниковый лазер по п. 1, который дополнительно содержит подложку под нижним отражателем. 3. Полупроводниковый лазер по п. 2, в котором а) активная область излучает свет под воздействием на нее инжекционного тока при приложении прямого смещения; и б) резонатор также содержит: i) первую ограничивающую область под активной областью; ii) вторую ограничивающую область над активной областью; iii) первую имеющую донорную примесь область растекания тока над подложкой и под первой ограничивающей областью; iv) первую ...

Lichtemittierendes Element, Herstellungsverfahren für ein lichtemittierendes Element und Verfahren zum Entwerfen einer Phasenmodulationsschicht

Das lichtemittierende Element gemäß einer Ausführungsform gibt ein klares optisches Bild aus, während es eine Verringerung der Lichtausgangsleistung unterdrückt, und umfasst ein Substrat, eine Lichtemissionseinheit und eine Bondschicht. Die Lichtemissionseinheit hat einen Halbleiterstapel, einschließlich einer Phasenmodulationsschicht, zwischen ersten und zweiten Elektroden. Die Phasenmodulationsschicht hat eine Basisschicht und modifizierte Brechungsindexbereiche und enthält einen ersten Bereich mit einer Größe, die die zweite Elektrode aufweist, und einen zweiten Bereich. Jeder Schwerpunkt des modifizierten Brechungsindexbereichs des zweiten Bereichs ist durch eine Anordnungsbedingung angeordnet. Das Licht von dem Stapel ist ein einzelner Strahl, und bezüglich eines ersten Abstands von dem Substrat zu der Vorderfläche des Stapels und eines zweiten Abstands von dem Substrat zu der Rückfläche des Stapels ist ein Änderungsbetrag des ersten Abstands entlang einer Richtung auf dem Substrat ...

Laserelement und Laservorrichtung

Die Koordinaten eines Einheitskonfigurationsgebiets R11 sind (X1, Y1), und die Koordinaten eines Einheitskonfigurationsgebiets Rmn sind (Xm, Yn) (wobei m und n natürliche Zahlen sind). Die Drehwinkel in Bezug auf eine Mitte von Scheitelpunkten eines gleichschenkligen Dreiecks sind gemäß Koordinaten verschieden, wobei in der gesamten photonischen Kristallschicht wenigstens drei verschiedene Drehwinkel enthalten sind.

LICHTEMITTIERENDE VORRICHTUNG

Eine lichtemittierende Vorrichtung gemäß einer Ausführungsform reduziert das in der Ausgabe eines S-iPM-Lasers enthaltene Licht nullter Ordnung. Die lichtemittierende Vorrichtung umfasst eine Lichtemissionseinheit und eine Phasenmodulationsschicht. Die Phasenmodulationsschicht umfasst eine Basisschicht und modifizierte Brechungsindexbereiche, die jeweils modifizierte Brechungsindexelemente enthalten. In jedem Einheitskomponentenbereich, der auf einen Gitterpunkt eines imaginären Quadratgitters zentriert ist, das auf der Phasenmodulationsschicht eingestellt ist, ist der Abstand vom entsprechenden Gitterpunkt zu jedem der Schwerpunkte der modifizierten Brechungsindexelemente größer als das 0,30-fache und nicht größer als das 0,50-fache des Gitterabstands. Darüber hinaus ist der Abstand vom entsprechenden Gitterpunkt zum Schwerpunkt der modifizierten Brechungsindexelemente insgesamt größer als 0 und nicht größer als das 0,30-fache des Gitterabstandes.

Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement

Es wird ein oberflächenemittierendes Halbleiterlaser-Bauelement offenbart, mit DOLLAR A - einem Resonator (3, 9), DOLLAR A - einem Halbleiterkörper (5), der eine zur Strahlungserzeugung vorgesehene Schichtenfolge (4) umfasst, DOLLAR A - einem transparenten, frequenzselektiven Wärmeleitelement (6), das sich mit einer Strahlungsdurchtrittsfläche (5a) des Halbleiterkörpers (5) in thermischem Kontakt befindet, und DOLLAR A - einem optischen Bandpassfilter (8), das geeignet ist, vorgebbare Resonatormoden zu unterdrücken. DOLLAR A Das beschriebene oberflächenemittierende Halbleiterlaser-Bauelement eignet sich besonders gut für die Verwendung in einer optischen Projektionsvorrichtung.

Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Oberflächenemittierender Laser mit senkrechtem Resonator und integrierter Mikrolinse

OPTISCH GEPUMPTER PASSIV MODENGEKOPPELTER OBERFLÄCHENEMITTIERENDER HALBLEITERLASER MIT EXTERNEM RESONATOR

Surface-emitting laser diode array and photodetector array

The LD array 100 includes a plurality of surface-emitting LDs 101a to 1011 each including a secondary diffraction grating 16. These LDs are radially arranged on a substrate 10 so that the diffraction gratings face a center point. The laser oscillation regions of the adjacent LDs are spaced apart so that the respective LDs are not affected by adjacent LDs and operate with high stability. When these LDs are oscillated with the same driving current, a high power laser light, comprising a plurality of laser emissions from the respective LDs and having the same phase and wavelength, is output stably in a prescribed direction. On the other hand, when the LDs are oscillated with different driving currents, a phase composite wave is output stably in a prescribed direction. The LDs may be DFB or DBR type including a primary diffraction grating. An array of photodetectors and a multi-wavelength optical communication system is also described. ...

Injection laser

... 1,086,800. Semi-conductor lasers. STANDARD TELEPHONES & CABLES Ltd. Sept. 23, 1966, No. 42499/66. Headings H1C and H1K. The PN junction 5 of a semi-conductor injection laser emerges at the light emitting surface 1 of the crystal in a plane displaced from the light emitting plane. The opposite surface 2 may be provided with a dielectric layer 3 and a metallic layer 4. If reflective layers are not provided the junction also emerges at surface 2 in a plane displaced from the light emitting plane, and may do so when reflectors are provided. The crystal may be of gallium arsenide and is formed from a slice of N-type material by laying masking strips of SiO 2 on one major surface parallel to the (110) plane, diffusing P-type material into the masked surface, and cleaving parallel to the (110) plane either through or between the masked regions, depending on whether the required surface 1, 2 is to have the PN junction in the light emitting plane or displaced from it. The device may be mounted between ...

DIODE LASER WITH A SATURABLE BRAGG REFEKTORSPIEGEL

CONTINUOUS REMOTE UV LASER SYSTEM WITH TWO ACTIVE RESONATORS

HIGH PERFORMANCE VERTICALLY EMITTING LASERS

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD

SURFACE-EMITTING LASER LIGHT SOURCE USING TWO-DIMENSIONAL PHOTONIC CRYSTAL

A surface-emitting laser light source for generating a linearly polarized laser beam having a single-peak beam profile where the intensity at and near the center is the highest. A two-dimensional photonic crystal where a vacancy (311 or 312) is made in a plate (31) and arranged in a tetragonal lattice is disposed on one side of an active layer (23). The planar shape (surface B) of the vacancies (311, 312) shown on the plan view on the emission side is smaller than the planar shape (surface C) on the active layer side. The position of the center of gravity of the planar shape of surface B is apart in the in-plane direction from that of the planer shape of surface C. With this, the symmetry in the plane of the two-dimensional photonic crystal is degraded, and a linearly-polarized single-peak laser beam can be generated.

A METHOD TO GAAS BASED LASERS AND A GAAS BASED LASER

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE-EMITTING LASER

A two-dimensional photonic crystal surface-emitting laser having a photonic crystal in which a photonic crystal periodic structure is located in or near an active layer (first medium) which emits light when carriers are injected thereto. The photonic crystal periodic structure comprises a second medium with a refractive index different from that of the active layer scattered in two-dimensional periodic array. The photonic crystal periodic structure is of a square lattice structure or a triangular lattice structure which has translation symmetry but does not have rotation symmetry. Alternatively, the photonic crystal periodic structure is of a square lattice structure or a rectangular lattice structure which is classified into pl, pm, pg or cm according to the two-dimensional pattern classification method. It is the most desirable that the lattice structure is composed of triangular lattice points.

SYSTEM AND METHOD FOR GENERATING LIGHT PULSES BASED ON DIRECT CURRENT MODULATION OF A SEED LASER DIODE

Laser pulse generating systems and methods are provided. Using the modulation signal from a pulse generation module, a seed laser diode generates seed light pulses in response to direct drive current modulation. The seed light pulses having a pulse duration longer than a target pulse duration and a spectral chirp. A compression module having dispersion characteristics over a broad spectral range is provided. The pulse generation module is configured to adapt the modulation signal to tailor the spectral chirp of the seed light pulses in view of the dispersion characteristics of the compression module, such that propagation of the seed light pulses through the compression module compresses the seed pulses into output light pulses having the target pulse duration.

SEMICONDUCTOR OPTICAL DEVICE HAVING DEVICE REGIONS AND DIFFRACTION GRATINGS

A semiconductor optical device including multilayer semiconductor device regions formed on a surface of a semiconductor substrate and act as an optical device respectively, and diffraction gratings formed on a back of the substrate optically coupled with at least one of said regions through the substrate. The region has a function such as light emitting, light receiving, light amplification or light switching. The regions and gratings can be respectively formed on the surface and the back, monolithicly, and polishing of the substrate provides a suitable thickness so that the regions and the gratings may be optically coupled with each other. The regions and gratings may be arranged at the optimum positions in the direction parallel to the substrate. Extremely precise alignment of its components and many channels can be obtained with compact size easily.

Vorrichtung zur Umwandlung elektrischer Energie in Lichtenergie, Verfahren zur Herstellung dieser Vorrichtung und Verfahren zu ihrem Betrieb

Semiconductor laser with integrated slow optical waveguide on chip

Optical device

Dispositif optoélectronique de puissance et son procédé de réalisation

L'invention concerne un circuit intégré qui constitue un dispositif électronique de puissance. Ce circuit intégré comporte, supportées par un substrat 27-, au moins une barrette de lasers 30 et au moins une réglette de réflecteurs 28. Les réflecteurs renvoient perpendiculairement au substrat 27 les faisceaux lasers émis parallèlement au substrat. Les faces clivées 57, 58 des lasers sont obtenues par sous-gravure 50 des barrettes, puis cassure par ultrasons. Application aux lasers de puissance, pour la métallurgie, la soudure, la chirurgie.

POWER OPTOELECTRONIC DEVICE AND METHOD FOR MAKING SAME

MODULATABLE VECSEL AND DISPLAY APPARATUS USING VECSEL, CAPABLE OF MODULATING LASER OUTPUT BY IMPROVING STRUCTURE OF MIRROR OF EXTERNAL RESONANCE

PURPOSE: A modulatable VECSEL(Vertical External Cavity Surface Emitting Laser) and a display apparatus using the VECSEL are provided to offer full color images without extra external optical modulator or color wheel by controlling laser outputted to correspond to images to project. CONSTITUTION: A modulatable VECSEL includes a pumping light source(31), a laser chip(41), a folding mirror(47), and a driving mirror unit(50). The pumping light source(31) irradiates a pump beam. The laser chip(41) is excited by the pump beam irradiated from the pumping light source(31) and irradiates laser beam having a predetermined wavelength. The folding mirror(47) forms the resonator with the laser chip(41), converts a path of an incident laser beam, and is arranged slantingly against an incident light axis(I) irradiated from the laser chip(41) having a gap from the laser chip(41). The driving mirror unit(50) is arranged to face a concave reflecting plane(47a), forms the external resonator, and modulates ...

LIGHT EMITTING DEVICE, A LIGHT SCANNING DEVICE, AND AN IMAGE FORMING DEVICE, CAPABLE OF PREVENTING BREAKDOWN DUE TO THERMAL EXPANSION COEFFICIENT WITH A PRINT BOARD

PURPOSE: A light emitting device, a light scanning device, and an image forming device are provided to improve heat dissipation by installing a heat sink in the print board of a rear heat dissipation electrode. CONSTITUTION: A surface emitting laser(10) includes a common electrode arranged in a lower surface and a plurality of individual electrodes arranged in an upper surface. A ceramic package(20) includes a metal mounting unit, a first rear electrode, and a rear heat dissipation electrode(33). The metal mounting unit mounts the opening and the surface emitting laser in the bottom of the opening. The first rear electrode is arranged in an edge of the rear of the ceramic package. The rear heat dissipation electrode is arranged in the center of the rear side of the ceramic package. The common electrode of the surface emitting laser is electrically connected to the metal mount unit. The metal mount unit is connected to the ground and electrically connected to a second rear electrode in an ...

SURFACE-EMITTING SEMICONDUCTOR LASER IN WHICH EXPANSION OF THE MODE-FIELD DIAMETER IS INTENDED TO MAKE THE OUTPUT INCREASE WHILE MAINTAINING A SINGLE HORIZONTAL MODE, A METHOD FOR MANUFACTURING THE SAME, AND AN OPTICAL DEVICE

PURPOSE: A surface-emitting semiconductor laser, a method for manufacturing the same, and an optical device are provided to install an oxide-contraction layer which has an oxide-contraction opening for selecting a main current path of the laser between an active layer and the first DBR(Distributed Bragg Reflector) or the second DBR, and make the oxide-contraction opening have a ring-shape approximately, surrounding the center portion of a resonator, in order to realize a low threshold value of current. CONSTITUTION: In a surface-emitting semiconductor laser(1), a buffer layer(4) when needed, a first DBR(5), a first clad layer(6), an active layer(7), a second clad layer(8) and a second DBR(9), and a cap layer(10) are sequentially formed by a continuous-epitaxy process on a substrate(3). A first electrode(2) is ohmic-contacted on the rear surface of the substrate(3) and an insulating film(11) is formed on the cap layer(10) in a ring-shaped pattern to form a second electrode(12) which has ...

HIGH EFFICIENT SECOND HARMONIC GENERATION VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER, CAPABLE OF IMPROVING EFFICIENCY OF CONVERTING WAVELENGTH OF SHG CRYSTAL

PURPOSE: A high efficient second harmonic generation vertical external cavity surface emitting laser is provided to reduce a half peak width of a laser beam without increasing thicknesses of a birefringent filter and a thermal diffusing device by using an etalon filter. CONSTITUTION: A high efficient second harmonic generation vertical external cavity surface emitting laser includes a laser chip(21), a first etalon filter layer(23), a second etalon filter layer(25), a first mirror(32), a second mirror(34), and an SHG(Second Harmonic Generation) crystal(33). The laser chip(21) generates a laser beam of a predetermined wavelength. The first etalon filter layer(23) is formed on the laser chip(21). The second etalon filter layer(25) is formed on the first etalon filter layer(23), and has a refractive index different from that of the first etalon filter layer(23). The first mirror(32) is slantingly arranged by being separated from the laser chip(21). The second mirror(34) reflects the laser ...

PLANE EMISSION TYPE SEMICONDUCTOR LASER DEVICE INCLUDING CURRENT CONFINEMENT LAYER AND FABRICATING METHOD THEREOF

PURPOSE: A plane emission type semiconductor laser device including a current confinement layer and a fabricating method thereof are provided to restrain oxidation of a restrain high-Al-content layer by using a high-Al-content layer dependent on a density of an n-type impurity. CONSTITUTION: A plane emission type semiconductor laser device includes a lower reflector, a light emission layer, and an upper reflector having a current confinement layer. The plane emission type semiconductor laser device is formed on a stepped substrate(42) including an upper level part(42a), a stepped part(42b), and a lower level part(42c) lower than the upper level part and surrounding the upper level part with the step part therebetween. The current confinement layer(64) includes, on the upper side of the upper level part of the stepped substrate, a current injection region comprised of an unoxidized high-Al-content layer having substantially the same shape as the plan-view shape of the upper level part and ...

VERTICAL CAVITY SURFACE EMITTING LASER, CAPABLE OF SUPPRESSING A HIGH TRANSVERSE MODE OSCILLATION AND PERFORMING A HIGH OUTPUT

PURPOSE: A vertical cavity surface emitting laser is provided to suppress the influence of a basic transverse mode on an optical output and a high transverse mode oscillation by forming a reflexibility control layer on a second multilayer reflector. CONSTITUTION: A laminate structure is formed on one side of a substrate(10). The laminate structure includes a lower DBR layer(11), a lower spacer layer(12), an active layer(13), an upper spacer layer(14), a current narrow layer(15), an upper DBR layer(16), a temperature compensation DBR layer(17), and a contact layer(18). A circumferential mesa unit(19) is formed on the upper side of the laminate structure. The lower DBR layer is used as a first multilayer reflector. The upper DBR layer is used as a second multilayer reflector. The temperature compensation DBR layer is used as the reflexibility control layer or the third multilayer reflector. COPYRIGHT KIPO 2010 ...

Vertical-cavity surface-emitting lasers with non-periodic gratings

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Provided is a semiconductor light emitting element with which it is possible to form a useful beam pattern. The semiconductor laser element LD is provided with: an active layer 4; a pair of cladding layers 2, 7 which sandwich the active layer 4; and a phase modulation layer 6 optically coupled with the active layer 4. The phase modulation layer 6 is provided with a basic layer 6A and a plurality of different refractive index regions 6B having a refractive index different from that of the basic layer 6A. The different refractive index regions 6B are arranged on the phase modulation layer 6 in a desirable manner, making it possible to emit laser light including a dark line having no 0-order light.

OPTICALLY SURFACE-PUMPED EDGE-EMITTING DEVICES AND SYSTEMS AND METHODS OF MAKING SAME

Optical resonator devices and systems enhanced with photoluminescent phosphors and designed and configured to output working light in an edge-emitting fashion at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. The edge-emitting functionality is enabled by providing one or more waveguides that direct light luminesced from the phosphors to one or more edges of the device. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum- confining structures, such as quantum wells and quantum dots, among others.

HIGH-POWER LASER PACKAGING UTILIZING CARBON NANOTUBES

In one embodiment, laser devices include a thermal bonding layer, wherein the thermal bonding layer comprises an array of carbon nanotubes, a first metallic bonding material disposed between the array of carbon nanotubes and a beam emitter, and a second metallic bonding material disposed between the array of carbon nanotubes and a first electrode mount.

A METHOD TO GAAS BASED LASERS AND A GAAS BASED LASER

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

Surface emitting laser, laser array, light source device, information acquisition device, and optical coherence tomography apparatus

A surface emitting laser includes a pair of reflecting mirrors (11, 15) and an active layer (13) that is arranged between the pair of reflecting mirrors (11, 15) and that is to be excited by light that is radiated from an external light source. A gap is formed between the active layer and one of the pair of reflecting mirrors (15), the oscillation wavelength of the surface emitting laser is changed, and a defining structure (20) that defines a light-emitting region of the active layer (13) is arranged in at least one of a region between the pair of reflecting mirrors (11, 15) and a region in at least one of the pair of reflecting mirrors (11, 15).

Circular grating surface emitting laser diode

A surface emitting laser diode comprises a circular grating defined on the top surface of the diode for emitting a laser therethrough, an active layer for generating the laser in the region thereof under the circular grating, a reflection layer for preventing the laser from emitting through the bottom surface of the diode and a first contact, which includes a plurality of electrodes, for providing the active layer with carriers of a first conduction type and a second contact for providing the active layer with carriers of a second conduction type.

Process for the construction of semiconductor lasers and lasers obtained by the process

The present invention relates to processes for the construction of semiconductor lasers. The process according to the invention is essentially characterized in that it consists in forming a layer 1 of a laser semiconductor active medium, in forming an optical cavity 2 associated with this layer, in disposing, on at least a part of the surface of the layer, first 6 and second 7 layers of materials of impurities of opposite polarities, in causing diffusion into the active medium of at least a part of the two materials of impurities to form, in the first layer, a cylinder 8 axis substantially parallel to the axis of the optical cavity and formed of two semi-cylindrical half-shells 9, 10 of diffused impurities of opposite polarities, and in connecting two conductors 12 of the electrical energy respectively to the two half-shells. Application to the construction of a plurality of laser diodes on one and the same support substrate, to create a homogeneous and dense single laser beam.

Electrical distribution system for semiconductor laser integrated circuit

The invention applies to a laser integrated circuit comprising at least one row of lasers (30) lying between two reflector strips (28). The lasers (18) are electrically connected in parallel. The light emission along the strip will be more uniform if the electrical current is distributed by two "combs" whose "teeth" are parallel to the laser ribbons (18) and interleaved with them. The terminal metallized area (44) for the first comb is deposited at the bottom of a recess (18) and the terminal metallized areas (45) for the second comb are on the surface of the row. Such a device finds particular application to the power supply for laser integrated circuits.

ELECTROLUMINESCENT SEMICONDUCTOR DEVICE

Optoelectronic component

An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE

A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.

SURFACE EMITTING LASER DIODE

A surface emitting laser diode includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type on the semiconductor substrate; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; and a second order diffraction grating in one of the first semiconductor layer and the second semiconductor layer. The second order diffraction grating has a pattern which includes concentric circles, a spiral, or polygons. An active region including the first semiconductor layer, the active layer, and the second semiconductor layer, is circular or polygonal.

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE LIGHT EMITTING LASER LIGHT SOURCE

The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer 24 created from a plate-shaped matrix body in which a large number of holes 25 are periodically arranged and an active layer 23 arranged on one side of the two-dimensional photonic crystal layer 24, the holes 25 are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer 24, the surface-emitting laser source using a two-dimensional photonic crystal has a Q? value (i.e. a Q value in a direction perpendicular to the surface) of several thousands, which is suitable for an oscillation of laser light, and the efficiency ...

Surface-emitting light emitting device, manufacturing method for the same, optical module, and optical transmission apparatus

Disclosed are a surface-emitting light emitting device includes an optical member whose mounting position, form, and size have been favorably controlled, and a method of manufacturing the same. The light emitting device (100) of the present invention can emit light perpendicular to a substrate (101) and includes an emitting surface (108) that emits the light, a base member (110) that is provided on the emitting surface (108), and an optical member (111) that is provided on an upper surface (110a) of the base member (110).

Wavelength-tunable light source

A wavelength-tunable light source (1) includes an emitting section (3) that emits light having a plurality of single wavelengths on a substrate (2). Surface-emitting lasers (4a-d) are arranged in close proximity to each other on the substrate in the emitting section. The number of surface-emitting lasers corresponds to the number of wavelengths to be emitted. The light with the wavelengths emitted from the respective surface-emitting lasers is incident on a medium at substantially the same position.

Fluorescence measuring apparatus

A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sample by the irradiation of the excitation light. In the fluorescence observing apparatus, a GaN semiconductor laser is employed as the light source.

Hybrid surface emitting laser and detector

The present invention is a combined surface emitting semiconductor laser (18) and photodetector (30, 32) in a single housing with the photodetector positioned to detect light emitted from the surface emitting laser (18) and reflected off of a medium. The surface emitting laser (18) is mounted on the top surface of a chip (22) which includes at least one set of two photodetectors (30, 32) for detecting a reflected beam. At least two photodetectors (30, 32) are used so that spacial variations in the reflected beam can be detected for focusing and tracking when the device is used in an optical head. Photodetectors (30, 32) are arranged to intersect a diffracted beam from a hologram lens used in an optical head. A rear emission photodetector (28) for monitoring the power of the surface emitting laser (18) is positioned so that it will not receive diffracted light which will interfere with its operation.

TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER

A two-dimensional photonic-crystal laser 10 includes: a substrate 11 made of an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) 131 provided on an upper side of the substrate 11 and made of a p-type semiconductor; an active layer 14 provided on an upper side of the p-type cladding layer 131; a two-dimensional photonic-crystal layer 16 provided on an upper side of the active layer 14 and including a plate-shaped base body 161 made of an n-type semiconductor in which modified refractive index areas 162 whose refractive index differs from the base body 161 are periodically arranged; a first tunnel layer 121 provided between the substrate 11 and the p-type cladding layer 131 and made of an n-type semiconductor having a carrier density higher than a carrier density of the substrate 11; a second tunnel layer 122 provided in contact with the first tunnel layer 121 between the first tunnel layer 121 and the p-type cladding layer 131, and made of a p-type semiconductor ...

OPTICAL MODULE

PROBLEM TO BE SOLVED: To provide an optical module in which a polarizing direction and an optical output of emission lights are stabilized by use of a plane light- emitting device and a monitoring light-receiving device. SOLUTION: The optical module M1 comprises a plane light-emitting type light-emitting device 1; a light-receiving device 2 for monitoring strength and the polarizing direction of emission lights from the light-emitting device 1; and an optical guided wave body 5 which receives the emission lights from the light-emitting device 1. The emission lights from the light-emitting device 1 are also incident on the light-receiving device 2 via an electric optical crystalline body 3 which generates a Pockels effect and a light polarizer 4. COPYRIGHT: (C)2002,JPO ...

SEMICONDUCTOR LASER DEVICE

PROBLEM TO BE SOLVED: To enable short-wavelength visible light semiconductor lasers to be contact-mounted in a downward posture assembly being arranged two-dimensionally, the each semiconductor laser attaining a high output owing to the horizontal direction in which the light progresses in an optical waveguide thereof and having a structure integrated with inclined surfaces. SOLUTION: Disclosed is a semiconductor element which includes a semiconductor light emitting element formed of thin film crystal provided on one main surface of a semiconductor substrate and having a function of emitting light in a semiconductor substrate direction perpendicular to the one main surface and a hole portion formed by leaving the semiconductor substrate to a thickness sufficient to allow light to reach or pass through the thin film crystal from the other main surface to the one main surface of the semiconductor substrate, and emits light from the hole portion, wherein a constitution portion which does not ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE

PURPOSE: To obtain light emission in approximately vertical direction, by forming a recess in semiconductor layers on a substrate, producing a P-N junction along the side wall of the recess and sending current across the P-N junction. CONSTITUTION: Layers of N-type AlxGa1-xAs (0.2 Подробнее

ИНЖЕКЦИОННЫЙ ЛАЗЕР

Использование: квантовая электронная техника, а именно эффективные, высокомощные и компактные полупроводниковые инжекционные источники излучения с узкой диаграммой направленности, которые применяются в волоконно-оптических системах связи и передачи информации, в оптических сверхскоростных вычислительных и коммутационных системах, при создании медицинской аппаратуры, лазерного технологического оборудования, лазеров с удвоенной частотой генерируемого излучения, а также для накачки твердотельных и волоконных лазеров. Сущность изобретения: предложена оригинальная конструкция оптического резонатора, в которой в объем среды оптического резонатора включен не только активный объем области усиления с вытекающим усилением, но и пассивный объем области втекания, сформированные с соответствующим образом выполненными составами, толщинами, числом слоев лазерной гетероструктуры, конфигурациями оптических граней области втекания, омическими контактами и слоями металлизации, что позволило практически разграничить ...

СПОСОБ ПОЛУЧЕНИЯ GAAS-ЛАЗЕРОВ И GAAS-ЛАЗЕР

... 1. Способ, использующий сухое травление для получения поверхностей, лишенных загрязнений из материалов, выбранных из группы, включающей в себя GaAs, GaAlAs, InGaAsP и InGaAs, для формирования нитридных слоев на произвольных структурах на GaAs-лазерах, при этом способ содержит следующие этапы: - обеспечивают лазерную поверхность с маской, выкрывающей участки лазерной поверхности, подлежащие защите от сухого травления; - помещают лазер в вакуум; - осуществляют сухое травление с использованием вещества, выбранного из группы, содержащей: химически активные газы, инертные газы, смесь химически активных газов и инертных газов; - формируют собственный нитридный слой (10; 24; 35) с использованием плазмы содержащей азот; - дополнительно наносят защитный слой (12) и/или зеркальное покрытие (на M6, M9). 2. Способ по п.1, отличающийся тем, что дополнительно содержит следующие этапы: - инициируют сухое травление с использованием плазмы на основе, по меньшей мере, одного вещества, из группы, включающей ...

СПОСОБ ПОЛУЧЕНИЯ ЛАЗЕРНЫХ ЗЕРКАЛ, ЛИШЕННЫХ ЗЕГРЯЗНЕНИЙ, И ИХ ПАССИВАЦИИ

... 1. Способ получения лазерных диодов из лазерной пластины, содержащий этапы, на которых расщепляют лазерную пластину (П) на бруски (Б) во внешней атмосфере, обеспечивая, по меньшей мере, первую фасетку, помещают, по меньшей мере, один брусок в вакуум, удаляют поверхностный оксид и загрязнение с, по меньшей мере, первой фасетки с использованием сухого травления, например, ионного травления, с использованием плазмы, содержащей, по меньшей мере, одно вещество из группы, содержащей химически инертные и активные газы, как азот, водород, аргон, галогеносодержащие газы (например, соединения на основе Cl, Br, или I) и газообразные углеводороды (например, СН4 и C2H6) и их смеси, создают первый нитридный поверхностный слой (8) на, по меньшей мере, первой фасетке с использованием плазмы, содержащей азот, причем ионы азота ускоряются от плазмы к поверхности (например, извлекаются в качестве ионного пучка), нитридный слой содержит, по меньшей мере, одно соединение из группы, содержащей A1N, GaN, InN, ...

Vorrichtung mit einer optischen Funktion, Herstellungsverfahren und optisches Kommunikationssystem

Scheibenförmiger Mikroresonator mit Gitter zur Auskopplung

Halbleiterlaserchip und Infrarot-Emitter-Bauelement

The invention relates to an infrared emitter component with a commercial light-emitting diode (LED) package (11) which has two electrode terminals (13, 14), one of which has a well-shaped reflector (12), and which has an optically transparent, electrically nonconductive encapsulating material (16). The invention provides that a semiconductor laser chip (1) is mounted in the well-shaped reflector (12) of the LED package. The semiconductor laser chip (1) has a quantum-well structure, especially with a strained-layer structure, for example MOVPE epitaxial layers with the layer sequence GaAlAs-InGaAs-GaAlAs. The optically transparent, electrically nonconductive material (16) of the LED package (11) may incorporate a diffuser material (17) which in terms of type and concentration is structured and introduced so as to produce, in conjunction with the semiconductor laser chip (1) encapsulated in the LED package (11), a radiation characteristic or an enlargement of the effective emission surface ...

Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements

Es wird ein strahlungsemittierendes Halbleiterbauelement (1) mit vertikaler Emissionsrichtung angegeben, das einen Halbleiterkörper (2) mit einer Halbleiterschichtenfolge aufweist. In der Halbleiterschichtenfolge ist ein zur Erzeugung einer Pumpstrahlung vorgesehener Pumpbereich (3) ausgebildet. Auf dem Pumpbereich (3) ist ein zur Erzeugung einer Emissionsstrahlung vorgesehener Emissionsbereich (4) angeordnet. In dem Halbleiterbauelement ist eine Koppelstruktur (7) ausgebildet. Weiterhin wird ein Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements (1) angegeben.

Lichtemittierende Einrichtung mit einem scheibenförmigen Halbleiterkörper

Surface emitting laser

Optical module for coupling an optical fibre and method of producing it

Surface emitting semiconductor laser device

A surface-emitting semiconductor laser device (1) includes an edge-emitting laser (4) formed from a plurality of semiconductor layers, disposed on a semiconductor substrate (2). A polymer material (10) is disposed on the substrate (2) in a channel laterally adjacent the layers in which the edge-emitting laser (1) is formed, and a reflector (20) is formed in or on an angled side facet (10) of the polymer material generally facing an exit end facet (10a) of the laser. Laser light passes out of the exit end facet (10a) propagates through the polymer material (10) before being reflected by the reflector (20) out of the device in a direction that is generally normal to the upper surface of the substrate (2). The edge emitting laser 4 may be a Fabry-Perot or distributed feedback laser (DFB).

OPTICALLY PUMPED DIODE LASER WITH RESONATOR-INTERNAL FREQUENZUMWANDLUNG

PROCEDURE FOR THE PRODUCTION OF A BURIED TUNNEL CONTACT IN AN SURFACE-EMITTING DIODE LASER

FABRY-PEROT LASER WITH WAVELENGTH CONTROL

SEMICONDUCTOR LIGHT EMITTING DEVICE WITH VERTICAL LIGHT EMISSION

SEMICONDUCTOR LASER DIODE ARRANGEMENT

A semiconductor device, formed on a wafer (13), comprises an array of laser diodes (Q1,Q2), each emitting a beam (B1,B2) parallel to the wafer surface, and, integrated with the array, individually tilted deflecting mirrors (R1,R2) forming an array of virtual sources (Q1',Q2'). Compared to the physical separation of the laser diodes, the virtual sources are spaced more closely, they can even be coincident, thereby reducing the apparent spacing between the beam origins. The reflected beams (B1',B2') are substantially perpendicular to the wafer providing a "surface-emitting" device. The required deflector configuration (54) can be fabricated in a single unidirectional process, the mirror positions and orientations being determined by proper segment geometry of the etch-mask.

Large-area-array coherent photonic crystal surface emitting laser light source structure

The invention discloses a large-area-array coherent photonic crystal surface emitting laser light source structure. The large-area-array coherent photonic crystal surface emitting laser light source structure comprises a photonic crystal array, wherein the photonic crystal array is composed of multiple array structures, each array structure is formed by a central photonic crystal located in the center and multiple peripheral photonic crystals which are symmetrically distributed around the central photonic crystal, and the structure of the central photonic crystal is identical to the structure of each peripheral photonic crystal. The whole structure has rotational symmetry, and the surface emitting property is achieved by a complete photonic crystal due to the fact that the band edge mode is adopted. By the adoption of the large-area-array coherent photonic crystal surface emitting laser light source structure, a small-divergence-angle and high-brightness large-area-array coherent laser ...

Optical element, and its manufacturing method

Monitoring photodetector for integrated photonic devices

A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Vertical cavity surface emitting laser device with monolithically integrated photodiode

METHOD FOR PRODUCING SEMICONDUCTOR LASERS AND LASER OBTAINED BY THE METHOD

Transistor optique et méthode de fonctionnement.

L'invention a trait à un transistor de puissance optique intégré. Ce transistor comprend un laser à setni-condueteur à arséniure de gallium 50 disposé sur la surface d'une diode semiconductrice 20. Les bords du laser à semi-conducteur sont biseautés de telle sorte que le rayonnement laser produit dans la cavité de Fabry-Perot soit dirigé sur la surface de la diode semi-conductrice pour y créer des paires trou-électron, provoquant le passage d'un courant électrique. Ce dispositif élimine les pertes optiques par réfraction.

OPTICAL TRANSISTOR AND METHOD OF OPERATION

SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS

Surface light emitting semiconductor laser element

Vertical cavity surface emitting laser having micro-lens

VERTICAL CAVITY SURFACE EMITTING LASER AND ITS MANUFACTURING METHOD

PURPOSE: A VCSEL and a manufacturing method are provided to achieve a short wave light emission by significantly decreasing layers between two material layers of a reflector layer. CONSTITUTION: A VCSEL comprises a substrate(20); a first reflector layer(30) constituted by an insulation layer(31) formed by a semiconductor layer(32) and an oxide layer(33) alternately deposited onto the substrate and which has at an upper portion thereof a contact surface(36) and a layer-deposition surface(37), and a conductive layer(35) having two semiconductor layers deposited onto the layer-deposition surface; a first electrode layer(70) formed onto the contact surface of the insulation layer; an activation layer(40) formed onto the conductive layer and which generates laser; a second reflector layer(60) formed onto the activation layer and which is constituted by a first material layer(61) and second material layers(62,63), the first and second material layers being alternately deposited; and a second ...

SURFACE EMITTING SEMICONDUCTOR LASER, AND ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE

VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER DEVICE AND LASER SYSTEM INCLUDING THE SAME, CAPABLE OF GENERATING PLURAL WAVELENGTHS OF LASER BEAMS

PURPOSE: A vertical external cavity surface emitting laser device and a laser system including the same are provided to realize a compact volume and reduce a manufacturing unit cost. CONSTITUTION: A vertical external cavity surface emitting laser device(20) includes a first laser device(30), a second laser device(50), and a heat spreader(40). The first and second laser devices(30,50) generate light of different wavelengths. The first laser device(30) has a first active layer(31) and a first reflector(35). The first active layer(31) generates light of a first wavelength. The first reflector(35) reflects the light generated from the first active layer(31). The second laser device(50) has a second active layer(51) and a second reflector(55). The second active layer(51) generates light of a second wavelength. The second reflector(55) reflects the light generated from the second active layer(51). The heat spreader(40) discharges heat generated from the first and second laser devices(30,50) to ...

EXTERNAL RESONATOR TYPE SURFACE EMITTING LASER REUSING PUMP BEAM, CAPABLE OF INCREASING ABSORPTION OF PUMP BEAM THROUGH ACTIVE LAYER BY REUSING PUMP BEAM

PURPOSE: An external resonator type surface emitting laser reusing a pump beam is provided to improve efficiency of use of the pump beam by reusing the pump beam through a multi band reflector. CONSTITUTION: An external resonator type surface emitting laser reusing a pump beam includes an active layer(34), an external mirror(37), a pump laser, and a multi band reflector(33). The active layer(34) emits a predetermined signal beam having a predetermined wavelength. The external mirror(37) faces an upper plane of the active layer(34) at a distance. The external mirror(37) penetrates some of the signal beam generated in the active layer(34) and reflects some of the signal beam to the active layer(34). The pump laser(30) emits a pump beam for exciting the active layer(34) toward the upper plane of the active layer(34). The multi band reflector(33) is contacted with a low plane of the active layer(34), and reflects the signal beam generated in the active layer(34) and the pump beam which is not ...

Discharge method, lens, manufacturing method thereof, semiconductor laser, manufacturing method thereof, optical device, and discharge device

To efficiently form microlenses respectively on a plurality of semiconductor lasers being in a wafer state. A discharge method includes; a step (A) of positioning a substrate having two discharging object parts so that a distance in the X-axis direction between two adjacent discharging object parts and a distance in the X-axis direction between two out of a plurality of nozzles arranged in the X-axis direction are equal to each other; a step (B) of moving the plurality of nozzles relatively to the substrate along a Y-axis direction orthogonal to the X-axis direction; and a step (C) of discharging liquid materials to the two discharging object parts from the two nozzles respectively when the two nozzles intrude into areas corresponding to the two discharging object parts in the step (B).

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE-EMITTING LASER

Provided is a two-dimensional photonic crystal surface-emitting laser that can improve the characteristics, and in particular the optical output, of emitted light. A two-dimensional photonic crystal surface-emitting laser (10X) that has: a two-dimensional photonic crystal (123) wherein variant-refractive-index regions (122) that have a different refractive index from a plate-like base material (121) are periodically arranged in two dimensions on the base material (121); an active layer (11) that is provided to one side of the two-dimensional photonic crystal (123); and a first electrode (15A), which supplies electric current to the active layer (11) of the two-dimensional photonic crystal (123), and a second electrode (16), which covers the same or a wider area than the first electrode (15A), that are provided so as to sandwich the active layer (11). The first electrode (15A) is formed such that electric current is supplied to the active layer (11) at densities that differ by in-plane location ...

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE-EMISSION LASER

Two-dimensional photonic crystal surface-emission laser comprising a two-dimensional photonic crystal, having media different in refractive index arrayed in a two-dimensional cycle, disposed in the vicinity of an active layer that emits light by the injection of carriers, wherein the two-dimensional photonic crystal consists of square lattices having equal lattice intervals in perpendicular directions, and a basic lattice consisting of a square with one medium as a vertex has an asymmetric refractive index distribution with respect to either one of the two diagonals of the basic lattice to thereby emit light in a constant polarizing direction.

Laser with a selectively changed current confining layer

A laser structure is provided with two current confining layers of a material that is subject to oxidation in the presence of an oxidizing agent. The laser structure is shaped to expose edges of the current confining layers to permit the edges to be exposed to the oxidizing agent. The current confining layers are oxidized selectively to create electrically resistive material at the oxidized portions and electrically conductive material at the unoxidized portions. The unoxidized portions of the layers are surrounded by the oxidized and electrically resistive portions in order to direct current from one electrical contact pad by passing through a preselected portion of an active region of the laser. The laser structure can be a vertical cavity surface emitting laser. The device achieves the current confining and directing function without the need to use ion bombardment or implantation to provide the current confining structure within the body of the laser.

Two-dimensional photonic crystal surface-emitting laser

A two-dimensional photonic crystal surface emitting laser has a laminated structure including: a two-dimensional photonic crystal (2DPC) layer in which refractive index distribution is formed by two-dimensionally arranging air holes in a plate-shaped base member; and an active layer for generating light with wavelength λL by receiving an injection of electric current. The two-dimensional photonic crystal surface emitting laser emits a laser beam in the direction of an inclination angle θ from normal to the 2DPC layer.

Laser device

In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

Surface emitting laser array and production method therefor

A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as max°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+max)° or be smaller than (90max)°.

Laser having equilateral triangular optical resonators of orienting output

A semiconductor laser with an equilateral triangle micro optical resonator has an output waveguide connected to the resonator for realizing directional emission, and the laser wafer structure is the slab waveguide constituted by lower cladding layer, active region and the upper cladding layer. The outer region of the equilateral triangle is etched to the lower cladding layer or substrate, while the unetched equilateral triangle region is used as the resonator, and the triangular sides serve as the reflecting mirrors. On one of the vertices or the sides of the triangle resonator connected or coupled an output waveguide can form an edge emission semiconductor laser and array having directive light emission. If the output waveguide is intersected with an incline, enabling the output light to deflect 90° then surface emission output can be acquired, thereby a surface emission semiconductor laser and array is produced, and a multi-wavelength semiconductor laser or array can be made by the equilateral ...

System, Method and Apparatus for Internal Polarization Rotation for Horizontal Cavity, Surface Emitting Laser Beam for Thermally Assisted Recording in Disk Drive

A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Optical-fiber supporting member and optical transmission device using the same

In a optical transmission device in which a surface-emitting laser and an optical fiber are coupled, a light emitting portion of the surface-emitting laser and an input end of the optical fiber are positioned with high precision. An optical-fiber supporting member is provided with an optical-fiber through hole in which an end portion of an optical fiber is inserted, and a photodiode. The through hole and the photodiode are arranged corresponding to the arrangement of two light emitting portions of a surface-emitting laser so that a center of the circular section of the through hole and the optical axis of the optical-transmission light emitting portion are off set by a predetermined amount when a center point of the photodiode and the optical axis of the reference-light emitting portion are aligned. The surface-emitting laser and the optical-fiber supporting member are coupled with the center point of the photodiode and the optical axis of the reference-light emitting portion aligned with ...

GaAs-based long-wavelength laser incorporating tunnel junction structure

The light-emitting device comprises a substrate, an active region and a tunnel junction structure. The substrate comprises gallium arsenide. The active region comprises an n-type spacing layer and a p-type spacing layer. The tunnel junction structure comprises a p-type tunnel junction layer adjacent the p-type spacing layer, an n-type tunnel junction layer and a tunnel junction between the p-type tunnel junction layer and the n-type tunnel junction layer. The p-type tunnel junction layer comprises a layer of a p-type first semiconductor material that includes gallium and arsenic. The n-type tunnel junction layer comprises a layer of an n-type second semiconductor material that includes indium, gallium and phosphorus. The high dopant concentration attainable in the second semiconductor material reduces the width of the depletion region at the tunnel junction and increases the electrostatic field across the tunnel junction, so that the reverse bias at which tunneling occurs is reduced.

SEMICONDUCTOR LASER DEVICE

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer interposed therebetween, and a diffractive lattice layer that is optically coupled to the active layer The semiconductor laser device includes a ¼ wavelength plate that is disposed between a group of the active layers of the plurality of semiconductor laser units LDC and a reflection film and a polarizing plate that is disposed between the group of the active layers of the plurality of semiconductor laser units LDC and a light emitting surface. 1. A semiconductor laser device comprising:a plurality of semiconductor laser units that are capable of being independently driven; anda spatial light modulator that is optically coupled to a group of the plurality of semiconductor laser units,wherein each of the semiconductor laser units includesan active layer,a pair of clad layers that has the active layer interposed therebetween, anda diffractive lattice layer that is optically coupled to the active layer,wherein the plurality of semiconductor laser units output laser beams along respective thickness directions,wherein the spatial light modulator includesa liquid crystal layer,a reflection film that is provided on a side opposite to the semiconductor laser unit with respect to the liquid crystal layer,a plurality of pixel electrodes that are two-dimensionally disposed, anda common electrode that interposes the liquid crystal layer interposed between the common electrode and the pixel electrode,wherein a laser beam emitted from each of the semiconductor laser units is incident on the spatial light modulator and is modulated in accordance with a state of the liquid crystal layer based on the pixel electrodes,wherein the ...

Tilted cavity semiconductor optoelectronic device and method of making same

A novel class of semiconductor light-emitting devices, or "tilted cavity light-emitting devices" is disclosed. The device includes at least one active element, generally placed within a cavity, with an active region generating an optical gain by injection of a current and two mirrors. The device generates optical modes that propagate in directions, which are tilted with respect to both the p-n junction plane and the direction normal to this plane. A light-emitting diode is also disclosed, where the cavity and the mirrors are designed such that transmission of generated optical power within a certain spectral range and within a certain interval of angles to the substrate is minimized. Transmission of optical power within a certain spectral range, which corresponds to the emission range of the light-emitting active medium and within a certain interval of angles out of the device, is optimized to achieve a required output power level.

Semiconductor laser

A master oscillator, vertical emission (MOVE) laser (300) includes an oscillator (301), a coupling region (306), and vertical-cavity amplifier region (304) formed on a common substrate (305). The coupling region (306) may include separately defined expansion (302) and grating (303) regions. Single-mode radiation of the oscillator (301) passes through the expansion region (302), which is a passive region that provides spatial expansion of the propagating single-mode radiation wavefront with little or no gain. The expanded single-mode radiation from the expansion region passes through the grating region (303), which provides coupling of the relatively broad wavefront from the expansion region into the cavity of the vertical-cavity amplifier. The expansion and grating regions may be configured to reduce or eliminate reflection of single-mode radiation propagating within the vertical-cavity amplifier back toward the oscillator. The cavity of the vertical-cavity amplifier (304) is relatively ...

Optoelectronical element and method of making the same

In the case of an optoelectronic element having a laser chip (1) as light emitter and lens coupling optics (6) for defined emission of the radiation produced in the laser chip (1), the intention is for the lens coupling optics (6) arranged directly in front of the laser chip (1) to be adjusted and stably fixed in a simple fashion and for the element to be efficiently produced in the wafer structure. The laser chip (1) is arranged on a common carrier (2) between two carrier parts (3, 4), whose side faces which are next to the resonator faces of the laser chip (1) are provided with mirror layers (5) and are inclined with respect to the resonator faces at an angle of 45°, so that the radiation produced in the laser chip (1) is directed almost vertically upwards relative to the surface of the common carrier (2), and the lens coupling optics (6) are arranged on at least one carrier part (3) in such a way that the radiation produced in the laser chip (1) is incident on the lens coupling optics ...

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER

A two-dimensional photonic-crystal surface-emitting laser (10) includes: a two-dimensional photonic-crystal layer (12) in which modified refractive index regions (122) having a refractive index different from a refractive index of a plate-like base material (121) are periodically disposed in the base material (121); an active layer (11) provided on one surface side of the two-dimensional photonic-crystal layer (12); and a reflection layer (15) provided on the other surface side of the two-dimensional photonic-crystal layer (12) or on a side opposite to the two-dimensional photonic-crystal layer (12) of the active layer (11) so as to be spaced apart from the two-dimensional photonic-crystal layer (12), wherein a distance d between surfaces of the two-dimensional photonic-crystal layer (12) and the reflection layer (15) facing each other is set such that a radiation coefficient difference Δαv = (αv1 - αv0), which is a value obtained by subtracting a radiation coefficient αv0 of a fundamental ...

Optical Apparatus for Forming a Tunable Cavity

An optical apparatus includes an optical fiber formed of a core surrounded by cladding, in which the optical fiber includes an end portion. In addition, an optical layer composed of a material having a relatively high refractive index is positioned on the end portion, in which the optical layer includes a non-periodic sub-wavelength grating positioned in optical communication with the core.

Optoelectronic semiconductor bodies having a reflective layer system

An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array

There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

High fill-factor efficient vertical-cavity surface emitting laser arrays

An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

Vertical cavity surface emitting laser with active carrier confinement

It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.

driver for supplying modulated current to a laser

A driver device for a laser includes a control device configured to generate a control current, an NPN differential amplifier connected to the control device and configured to superimpose a modulation current onto the control current to generate a combined current, and a laser activation switch coupled to the output of the NPN differential amplifier, the laser activation switch operating the laser utilizing the combined current. Also described herein is a communication system including a driver device.

Gan laser element

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

Photonic crystal surface emission laser

A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein a x1 , a x2 , a y , and n satisfy the following inequality:  1 a x   1 - 1 a x   2  ( 1 a x   1 + 1 a x   2 ) 2 + ( 2 a y ) 2 ≤ 1 n .

SURFACE-EMISSION LASER DEVICES, SURFACE-EMISSION LASER ARRAY HAVING THE SAME, ELECTROPHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM

A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light. 1. A surface-emission laser device , comprising:an active layer;cavity spacer layers provided at both sides of said active layer;reflection layers provided at respective sides of said cavity spacer layers, said reflection layers reflecting an oscillation light oscillated in said active layer; anda selective oxidation layer provided between a first location and a second location, said first location being formed in said reflection layer corresponding to a node of a standing wave distribution of an electric field of a fundamental mode of said oscillation light and said second is location adjacent to said first location corresponding to said node of said standing wave distribution of the fundamental mode in said reflection layer in a direction away from said active layer, said second location corresponding to an anti node of said standing wave distribution.2. The surface-emission laser device as claimed in claim 1 , wherein said selective: oxidation layer is provided between said first location and a midpoint between said first and second locations.3. The surface-emission laser device as claimed in claim 1 , wherein said selective oxidation layer is provided generally at a midpoint between said first location and said ...

Diode laser and method for manufacturing a high-efficiency diode laser

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

Hybrid laser light sources for photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

SURFACE EMITTING LASER

A surface emitting laser having a mesa structure includes an off-orientation substrate, a bottom reflection mirror, an active layer, a current confinement layer, a top reflection mirror, and a surface-relief structure. The central axis of a high-reflectivity region of the surface-relief structure and the central axis of the mesa structure do not coincide with each other. 1. A surface emitting laser having a mesa structure , the surface emitting laser comprising:an off-orientation substrate;a bottom reflection mirror formed on the off-orientation substrate;an active layer formed on the bottom reflection mirror;a current confinement layer formed on the active layer, the current confinement layer including an oxidized region and a non-oxidized region;a top reflection mirror formed on the current confinement layer; anda surface-relief structure formed on a light-emitting region of the top reflection mirror, the surface-relief structure has a stepped structure including a low-reflectivity region and a high-reflectivity region,wherein a central axis of the high-reflectivity region of the surface-relief structure and a central axis of the mesa structure do not coincide with each other.2. The surface emitting laser according to claim 1 , wherein a center of the high-reflectivity region of the surface-relief structure is located corresponding to a direction in which the off-orientation substrate is inclined.3. The surface emitting laser according to claim 1 , whereina center of the high-reflectivity region of the surface-relief structure lies within a fan-shaped region having a central angle of 90 degrees or less and a radius r,an arc of the fan-shaped region intersects an axis that passes through a center of the mesa structure, the axis being perpendicular to a plane oriented in a direction in which the off-orientation substrate is inclined, andthe radius r is 15% or less of a distance between the center of the mesa structure and a periphery of the non-oxidized region.4. ...

SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE

A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. 120-. (canceled)21. A surface-emitting laser array comprising:a substrate;an element-arrangement portion provided on the substrate and including a plurality of surface-emitting laser elements arranged therein; anda flat part provided on the substrate and arranged in a circumference of the element-arrangement portion in an in-surface direction of the substrate, wherein:each of the plurality of surface-emitting laser elements includes a mesa structure that emits a laser beam;each of the flat part and the element-arrangement portion includes an absorption layer that is arranged to absorb a difference of an etching depth in the in-surface direction at a time of forming the mesa structures of the plurality of surface-emitting laser elements; anda bottom of the mesa structure of each surface-emitting laser element is located in the absorption layer in a direction perpendicular to the substrate.22. The surface-emitting laser array according to claim 21 ,wherein each of the plurality of surface-emitting laser elements comprises:a first reflection layer formed on the substrate to constitute a semiconductor Bragg ...

SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS

A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions. 129-. (canceled)30. A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate , the surface-emitting laser device comprising:an electrode surrounding an emitting area on an emitting surface to emit the laser light; anda bump structure formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part, the bump structure having an optical thickness of (λ/4)·n (n is an odd number, λ is an oscillation wavelength),wherein the outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.31. The surface-emitting laser device as claimed in claim 30 ,wherein the bump structure is formed on a plurality of small areas provided in the outside area.32. The surface-emitting laser device as claimed in claim 30 ,wherein the bump structure is formed on an annular area provided in the outside area, and the annular area has different diameters in two mutually perpendicular directions.33. The surface-emitting laser device as claimed in claim 31 ,wherein the plural small areas include a first small area and a second small area, and the first small area and the second small area face each other across the center part of the emitting area.34. The surface-emitting laser device as claimed in claim 33 ,wherein the laser light is linearly polarized light, andthe first small area and the second small area face ...

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

SURFACE EMITTING LASER ARRAY ELEMENT, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS

A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring. 1. A surface emitting laser array element comprising:a lower distributed bragg reflector that is formed on a substrate;an active layer that is formed on the lower distributed bragg reflector;an upper distributed bragg reflector that is formed on the active layer;a mesa and a dummy mesa that are created by removing a portion of the upper distributed bragg reflector, the mesa forming a surface emitting laser and the dummy mesa being arranged at a periphery of the mesa; anda wiring that is connected to an electrode that is formed on an upper face of the mesa, the wiring including a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.2. The surface emitting laser array element as claimed in claim 1 , wherein two strips of the wiring are arranged between the dummy mesas.3. The surface emitting laser array element as claimed in claim 1 , whereinthe portion of the wiring that is arranged over the peripheral region of the dummy mesa is arranged to extend in an outward direction from the dummy mesa to be wider than a remaining portion of the wiring.4. The surface emitting laser array element as claimed in claim 1 , ...

Semiconductor Light Source Free From Facet Reflections

A new class of optical source having a truncated waveguide is provided, where a guided section of a light generating medium is terminated at an angle at a predetermined distance away from one end facet of the waveguide, thereby leaving a section for unguided light propagation. A truncated waveguide when implemented in combination with waveguide tilt, effective front facet reflectivity is reduced significantly to eliminate unwanted facet reflections. By extending electrical pumping in the unguided propagation section, the light in the unguided path propagates to a corresponding end facet without attenuation. The reflected light propagates freely without being intercepted by the waveguide. The principles are incorporated in different types of light generating and amplifying medium including a “double-pass” gain medium for designing optical sources having significantly high output power and negligibly small spectral modulation arising from unwanted facet reflections.

Semiconductor Laser Device

Beams of light having wavelengths different from each other are generated in a plurality of light generation portions, the beams of light each generated in the plurality of light generation portions are reflected by a monolithic integrated mirror and are incident to a condenser lens, and emission positions on the condenser lens of the beams of light each generated in the plurality of light generation portions deviate from a central position of the condenser lens by a predetermined amount.

SURFACE EMITTING LASER

A surface emitting laser includes an active layer; a periodic-structure layer including a low-refractive-index medium and a high-refractive-index medium and whose refractive index varies periodically, the periodic-structure layer being provided at a position where light emitted from the active layer couples therewith; and a pair of electrodes from which electricity is supplied to the active layer. The periodic-structure layer is patterned as a square periodic-structure lattice. At least one of the electrodes includes one or more linear electrodes. A direction of each lattice vector of the periodic structure and a longitudinal direction of the linear electrodes are different from each other. 1. A surface emitting laser comprising:an active layer;a periodic-structure layer including a low-refractive-index medium and a high-refractive-index medium and whose refractive index varies two-dimensionally and periodically, the periodic-structure layer being provided at a position where light emitted from the active layer couples therewith; anda pair of electrodes from which electricity is supplied to the active layer,wherein the periodic-structure layer is patterned as a square periodic-structure lattice,wherein at least one of the electrodes includes one or more linear electrodes, andwherein a direction of each lattice vector of the periodic structure and a longitudinal direction of the linear electrodes are different from each other.2. The surface emitting laser according to claim 1 , further comprising a current injection region into which a current is injected from the one of the electrodes claim 1 , the current injection region including one or more linear regions provided side by side in a plane parallel to the active layer.3. The surface emitting laser according to claim 1 ,wherein the current from the one of the electrodes is injected into a first region and a second region at respectively different current densities, andwherein an optical gain obtained at the higher ...

Lateral electrochemical etching of iii-nitride materials for microfabrication

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Light emitting device

A light emitting device includes: a light emitting section including an active layer configured to emit light by application of a voltage; and a thin metal film disposed on a region of the light emitting section irradiated with the light. The thin metal film has a plurality of openings each having a diameter that is smaller than a wavelength of the light, and at least one phosphor is placed in each of the openings.

Method for handling a semiconductor wafer assembly

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Hybrid vertical cavity laser for photonic integrated circuit

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

TUNABLE OPTICAL PHASE FILTER

An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width. 1. A vertical cavity surface-emitting laser element (VCSEL) , comprising:a top distributed Bragg reflector (DBR) and a bottom DBR each made with multiple layers of semiconductor thin films;{'sub': x', 'y, 'an active region having at least one quantum well and at least one quantum well barrier each having a thickness of 3-10 nm formed between the top DBR and the bottom DBR, the at least one quantum well comprising InGaAs with an In composition of 0.04-0.12, the at least one quantum well barrier comprising AlGaAs where x is between 0.3-0.4 or GaAsPwhere y is between 0.2-0.3, wherein the at least one quantum well is adjusted for a photoluminescence emission target between 835-840 nm; and'}a surface relief structure formed on at least the top-most layer of the top DBR by dry or wet etching of semiconductor or dielectric thin films, wherein the surface relief structure has a depth of 20-150 nm and a diameter of 2-6 um, and the top surface of the top-most layer is terminated (1) either in-phase or anti-phase in relation to a standing ...

Nanobeam Cavities Having Carrier-Injection Beams

In one embodiment, a nanobeam cavity device includes an elongated waveguide having a central optical cavity, first and second lateral substrates that are positioned on opposed lateral sides of the waveguide, and carrier-injection beams that extend from the first and second lateral substrates to the central optical cavity of the elongated waveguide. 1. A nanobeam cavity device comprising:an elongated waveguide having a central optical cavity;first and second lateral substrates that are positioned on opposed lateral sides of the waveguide; andcarrier-injection beams that extend from the first and second lateral substrates to the central optical cavity of the elongated waveguide.2. The device of claim 1 , wherein the elongated waveguide is made of a semiconductor material.3. The device of claim 1 , wherein the elongated waveguide is made of a dielectric material.4. The device of claim 1 , wherein the elongated waveguide has multiple holes that extend from a top surface of the waveguide to a bottom surface of the waveguide.5. The device of claim 4 , wherein the carrier-injection beams are each aligned with a center of one of the holes or a center between two holes.6. The device of claim 4 , wherein the holes are provided in two groups positioned on opposite sides of the central optical cavity claim 4 , the holes in each group having an equal periodicity within the group.7. The device of claim 6 , wherein the holes of each group are tapered such that the holes are larger in size the farther away from the center of the central optical cavity they are positioned.8. The device of claim 1 , wherein the elongated waveguide is suspended in air such that air surrounds a top claim 1 , a bottom claim 1 , and opposed lateral sides of the waveguide.9. The device of claim 1 , wherein the carrier-injection beams contact the elongated wavelength at nodes of a resonant mode of the nanobeam cavity device where the minima of an electric field generated by light injected into the ...

INTEGRATED OPTOELECTRONIC DEVICE COMPRISING A MACH-ZEHNDER MODULATOR AND A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL)

A Mach-Zehnder modulator (MZM) is horizontally integrated with a VCSEL. The horizontally-integrated MZM overcomes wavelength dependence problems of horizontally-integrated EA modulators and yet has the same advantages as horizontally-integrated EA modulators in terms of overcoming the ER and modulation range problems associated with the vertically-integrated EA and EO modulators. By overcoming these problems with the existing integrated modulators, the operation speed of the VCSEL is increased and the modulation signal range is extended to allow a wider range of modulation signals and modulation schemes, including large-signal digital modulation schemes. 1. An optoelectronic device comprising:a substrate;a first vertical cavity surface emitting laser (VCSEL) disposed on the substrate having a first distributed Bragg reflector (DBR) disposed above the substrate, a first quantum well (QW) region disposed above the first DBR, a second DBR disposed above the first QW region, and a first reflector disposed above the second DBR opposite the substrate, the first reflector reflecting light produced by the first VCSEL back into the optoelectronic device; anda Mach-Zehnder modulator (MZM) horizontally integrated into the optoelectronic device beside the first VCSEL, wherein the MZM receives light produced by the first VCSEL and modulates the received light to produce a modulated optical signal, wherein the MZM has a second reflector disposed in or on the MZM that prevents the light received from the first VCSEL from passing through a top surface of the MZM, wherein the first and second reflectors are different portions of a single reflector.23-. (canceled)4. The optoelectronic device of claim 1 , further comprising:an output cavity having a structure of a VCSEL, the output cavity being horizontally integrated into the optoelectronic device beside the MZM opposite the first VCSEL, the output cavity comprising a third DBR, a second QW region disposed above the third DBR, and a ...

Semiconductor laser

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

LIGHT EMITTING ELEMENT

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer , a light emitting structure , and a second light reflecting layer . The light emitting structure is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer , an active layer , and a second compound semiconductor layer . In the laminated structure , at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer 1. A light emitting element comprising a laminated structure formed by laminating:a first light reflecting layer;a light emitting structure; anda second light reflecting layer, whereinthe light emitting structure is formed by laminating:from the first light reflecting layer side,a first compound semiconductor layer;an active layer; anda second compound semiconductor layer, andin the laminated structure, at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer.2. The light emitting element according to claim 1 , wherein at least four light absorbing material layers are formed.3. The light emitting element according to claim 1 , wherein{'sub': eq', '0, 'claim-text': {'br': None, 'i': m·λ', 'n', 'L', 'm·λ', 'n, 'sub': 0', 'eq', '0', '0', 'eq, '0.9×{()/(2·)}≤≤1.1×{()/(2·)}'}, 'when an oscillation wavelength is represented by Ao, an equivalent refractive index of a whole of the two light absorbing material layers and a portion of the laminated structure located between the light absorbing material layers is represented by n, and a distance between the light absorbing material layers is represented by L,'}is satisfied.Provided that m is 1 or any integer of 2 or more including 1.4. The light emitting element according to claim 1 , wherein the light absorbing material layers have a thickness of λ0/(4·n) or less.5. The light emitting element according to claim 1 , wherein the light absorbing material ...

Vertical cavity surface emitting laser and method for manufacturing the same, electronic apparatus, and printer

A vertical cavity surface emitting laser includes a base and a layered element provided on the base. The layered element includes a first mirror layer, a second mirror layer, and an active layer provided between the first mirror layer and the second mirror layer. The layered element further includes a light exiting section via which light produced in the active layer exits. The light exiting section is an outermost surface of an AlGaInP layer or an AlGaAsP layer.

SURFACE EMITTING QUANTUM CASCADE LASER

A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating. 1. A surface emitting quantum cascade laser comprising:an active layer including a plurality of quantum well layers stacked therein and being capable of emitting laser light by intersubband transition;a first semiconductor layer provided on the active layer and having a first surface, the first surface including an internal region in which first pits constitute a first two-dimensional grating and an outer peripheral region in which second pits constitute a second two-dimensional grating, the outer peripheral region surrounding the internal region:an insulator layer which covers side surfaces and bottom surfaces of the first pits, side surfaces and bottom surfaces of the second pits, and a portion of the internal region not provided with the first pits;an upper electrode which covers a portion of the outer peripheral region not provided with the second pits and fills the first pits and the second pits via the insulator layer;a second semiconductor layer provided on a surface of the active layer on opposite side from a surface provided with the first semiconductor; anda lower electrode which is ...

Micro Laser Diode Display Device and Electronics Apparatus

A micro laser diode display device and an electronics apparatus are disclosed. The micro laser diode display device comprises: a substrate ()/receiving substrate (). wherein first type electrodes () are arranged on the substrate ()/receiving substrate (); a micro laser diode () array of at least one color bonded on the substrate ()/receiving substrate (), wherein a first side of micro laser diodes () in the micro laser diode array is connected to the first type electrodes (); and second type electrodes () connected to a second side of the micro laser diodes (). 1. A micro laser diode display device , comprising:a substrate, wherein one or more first type electrodes are arranged on the substrate;a micro laser diode array comprising a plurality of micro laser diodes of at least one color bonded on the substrate, wherein a first side of the micro laser diodes in the micro laser diode array is connected to the first type electrodes; andone or more second type electrodes connected to a second side of the micro laser diodes.2. The micro laser diode display device according to claim 1 , wherein the micro laser diodes comprise a vertical cavity surface emitting laser structure claim 1 , which includes a lower contact layer claim 1 , a lower Bragg reflector layer claim 1 , a lower spacer layer claim 1 , an active layer claim 1 , an upper spacer layer claim 1 , an upper Bragg reflector layer and an upper contact layer.3. The micro laser diode display device according to claim 1 , further comprising a dielectric filler layer is filled among the micro laser diodes.4. The micro laser diode display device according to claim 1 , wherein at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.5. The micro laser diode display device according to claim 3 , wherein the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer claim 3 , and are patterned so that the micro laser diodes are exposed.6. ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 226-. (canceled) This is a Continuation of application Ser. No. 12/078,681, filed on Apr. 3, 2008. The present invention contains subject matter related to Japanese Patent Application JP 2007-109654 filed in the Japanese Patent Office on Apr. 18, 2007, the entire contents of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to a light-emitting element and a method for manufacturing the same.2. Description of the Related ArtIn a surface-emitting laser element, on a substrate, for example, an active layer having a multiple quantum well structure is disposed in a cavity sandwiched between two mirror layers provided on upper and lower sides thereof, light emitted from the active layer under current injection is confined, and thus laser oscillation is caused. In such a surface-emitting laser element, a cylindrical mesa structure is usually employed, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 2005-026625. Specifically, for example, a cylindrical mesa structure with a diameter of about 30 μm is formed by dry etching or ...

SEMICONDUCTOR LASER MODULE

A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated. 1. A semiconductor laser module , comprising:a surface emitting laser element;a monitoring light detection element; anda storage container,wherein the storage container includes an upper wall and a bottom wall,the storage container stores the surface emitting laser element and the monitoring light detection element,the upper wall includes an opening and faces the bottom wall,the surface emitting laser element includes a principal surface, a light emitting region, and a two-dimensional photonic crystal layer, is provided on the bottom wall, emits a main beam and a sub-beam from the light emitting region, and is arranged so that the main beam passes through the opening,the light emitting region is provided on the principal surface,a first optical axis of the main beam extends in a vertical direction of the principal surface,a second optical axis of the sub-beam forms a predetermined angle a with the vertical direction,the two-dimensional photonic crystal layer includes a plurality of hole portions and extends along the principal surface,the plurality of hole portions have a same shape, are arranged in a lattice pattern in a plurality of arrangement directions parallel to ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a current-constriction structure;an insulation structure surrounding the current-constriction structure;a plurality of holes disposed within the insulation structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a current-constriction-structure active region having an active-region compositional layer configuration;', 'a current-constriction-structure first region disposed above a substrate of the light-emitting device and below the current-constriction-structure active region, the current-constriction-structure first region having a first-region compositional layer configuration;', a current-constriction-structure-second-region first portion having a second-region-first-portion compositional layer configuration;', 'a current-constriction-structure-second-region second portion; and', 'a current-constriction-structure-second-region third portion having a second-region-third-portion compositional layer configuration;', 'wherein the current-constriction-structure-second-region first portion being disposed above ...

SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(λ/2)×m+λ/8 Подробнее

Mode conversion for optical isolation

An optical coupling system includes an optical signal source to provide an optical signal from an aperture. The system also includes a substantially planar high-contrast grating (HCG) lens to convert an optical mode of the optical signal to provide a converted optical signal having a mode-isolating intensity profile. The system further includes an optical element to receive the converted optical signal. The optical signal source and the substantially planar HCG lens can be arranged to substantially mitigate coupling of a reflected optical signal associated with the converted optical signal that is reflected from the optical element to the aperture of the optical signal source based on a reflected mode-isolating intensity profile.

RESONANT OPTICAL CAVITY LIGHT EMITTING DEVICE

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to less than 1, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength. 1. A resonant optical cavity light emitting device comprising:a substrate;a first spacer region coupled to the substrate, the first spacer region being non-absorbing to a target emission deep ultraviolet wavelength (target wavelength), wherein at least a portion of the first spacer region comprises a first electrical polarity of n-type;a light emitting region on the first spacer region, the light emitting region being configured to emit the target wavelength;a second spacer region on the light emitting region, the second spacer region being non-absorbing to the target wavelength, wherein at least a portion of the second spacer region comprises a second electrical polarity opposite of the first electrical polarity; anda reflector coupled to the second spacer region, the reflector having a metal composition comprising elemental aluminum;wherein the light emitting region is positioned at a separation distance from the reflector; andwherein the resonant optical cavity light emitting device has an optical cavity between the reflector and a first surface of the substrate, the optical cavity comprising the first spacer region, the second spacer region and the ...

SINGLE MODE VERTICAL-CAVITY SURFACE-EMITTING LASER

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted by the VCSEL through the substrate. The VCSEL lases in a single transverse mode. 1. A vertical-cavity surface-emitting laser (VCSEL) comprising:a first reflector having a first reflectivity;a second reflector having a second reflectivity, wherein the second reflectivity is less than the first reflectivity;a light generation region between the first and second reflectors; anda substrate having a first surface and a second surface, wherein the first surface is coupled to the second reflector, and wherein the second surface is formed into a lens shape to act upon light emitted by the VCSEL through the substrate,wherein the VCSEL lases in a single transverse mode.2. The VCSEL of claim 1 , further comprising an oxide layer having an aperture with an aperture diameter in a central area of the oxide layer claim 1 ,wherein the aperture in the oxide layer has a higher refractive index than the surrounding oxide layer; the oxide layer is located at or near a null of a standing wave in the VCSEL; and a center of the oxide layer is approximately aligned with a central axis of the first reflector, the light generation region, the second reflector, and the substrate.3. The VCSEL of claim 2 , wherein the first reflector is a distributed Bragg reflector and comprises a first number of pairs of semiconductor layers in a central region of the first reflector and a second number of pairs of semiconductor layers in an outer region surrounding the central region claim 2 , wherein the first number of pairs is greater than ...

LASER DEVICE

In a laser device, a different refractive index region B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.

SEMICONDUCTOR LASER ELEMENT

A semiconductor laser element is realized with high beam quality (index M<1). A diffraction grating of a diffraction grating layer extends along a principal surface and is provided on a p-side surface of the diffraction grating layer ; the refractive index of the diffraction grating layer periodically varies in directions extending along the principal surface , in the diffraction grating ; the diffraction grating has a plurality of holes ; the plurality of holes are provided in the p-side surface and arranged in translational symmetry along a square lattice R; the plurality of holes each have the same size and shape; each hole corresponds to a lattice point of the diffraction grating and is of a triangular prism shape; a shape of a bottom face of the hole is an approximate right triangle. 1. A semiconductor laser element comprising a semiconductor laminate ,wherein the semiconductor laminate comprisesa support substrate, a first cladding layer, an active layer, a diffraction grating layer, and a second cladding layer,wherein the first cladding layer, the active layer, the diffraction grating layer, and the second cladding layer are provided on a principal surface of the support substrate,wherein the active layer and the diffraction grating layer are provided between the first cladding layer and the second cladding layer,wherein the active layer generates light,wherein the second cladding layer has a conductivity type different from a conductivity type of the first cladding layer,wherein the diffraction grating layer has a diffraction grating,wherein the diffraction grating has a two-dimensional photonic crystal structure of square lattice arrangement,wherein the two-dimensional photonic crystal structure has a plurality of holes and extends along the principal surface,wherein the plurality of holes have an identical shape and are arranged along a square lattice of the diffraction grating,wherein the hole corresponds to a lattice point of the diffraction grating, ...

COMPACT DISTRIBUTED BRAGG REFLECTORS

Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide.

SURFACE EMITTING LASER, INFORMATION ACQUISITION APPARATUS, AND IMAGING APPARATUS

A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector. 1. A surface emission laser comprising:a first reflector;an active layer disposed on the first reflector;a first beam disposed on the active layer via a space;second reflector disposed in an opening portion formed in the first beam; andsecond beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam,wherein both ends, at least in a longitudinal direction, of the first beam are fixed ends, andwherein a length, in the longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.2. The surface emission laser according to claim 1 , further comprising an electrode disposed on the first beam claim 1 ,wherein the second reflector is not electrically connected to the electrode.3. The surface emission laser according to claim 2 , wherein the electrode is formed to be connected to the first beam in the longitudinal direction.4. The surface emission laser according to claim 2 , wherein a volume resistivity of the first beam is equal to or larger than 1×10Ωcm.5. The surface emission laser according to claim 2 , further comprising an additional electrode that forms a pair with the electrode for driving the first beam.6. The surface emission laser according to claim 1 , wherein the second reflector is not electrically connected to the first beam.7. The surface emission laser according to claim 6 , wherein a volume resistivity of the ...

SURFACE EMITTING LASER STRUCTURE

A surface emitting laser with improved efficiency includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields. Heat dissipation and electrical conduction properties are improved by the conductive substrate. Because the epitaxial current-blocking layer is not made by destructive manufacturing method, the efficiency of the surface emitting laser can be improved. 1. A surface emitting laser with improved efficiency , the surface emitting laser comprising:a conductive substrate;a metal bonding layer on an upper surface of the conductive substrate;a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;wherein, the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer.2. The surface emitting laser according to claim 1 , wherein the metal bonding layer claim 1 , the laser structure layer claim 1 , the epitaxial semiconductor reflection layer claim 1 , the first electrode layer claim 1 , and the conductive substrate are combined with each other by a wafer bonding process claim 1 , in the wafer ...

SIDE-VIEW LIGHT EMITTING LASER ELEMENT

A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively. 1. A side-view light emitting laser element , comprising:a support substrate;a first electrode layer disposed on the support substrate, wherein one surface of the first electrode layer opposite to the support substrate is partially formed with a first extending portion, the first extending portion has a first light reflection surface which is disposed on one surface of the first extending portion opposite to the support substrate;a second electrode layer disposed on the first electrode layer; anda light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer, and the second electrode layer fully covering the light emitting multilayer unit, the light emitting multilayer unit comprising a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer,wherein one surface of the second electrode layer facing towards the light emitting multilayer unit is partially formed with a second extending portion, the first extending portion and the second extending portion respectively extend towards the light emitting multilayer unit, the second extending portion has a second light reflection surface which is disposed on ...

SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS

A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions. 129-. (canceled)30. A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate and to include a current passing area in a mesa structure comprising:an electrode configured to surround an emitting area larger than the current passing area and to be provided on an emitting surface from which the laser light is emitted in the mesa structure,wherein a low reflectance area in the emitting area has shape anisotropy in two mutually perpendicular directions, andwherein a high reflectance area having higher reflectance than the low reflectance area in the emitting area is provided outside the current passing area from the direction perpendicular to the substrate in the emitting area.31. The surface-emitting laser device as claimed in claim 30 , wherein a normal direction of a principal surface of the substrate slopes toward one of directions of a crystal orientation <1 1 1> claim 30 , from one of directions of a crystal orientation <1 0 0>.32. The surface-emitting laser device as claimed in claim 30 , wherein a center part of the emitting area is covered with a dielectric film and an optical thickness of the dielectric film is an even multiple of ¼ of an oscillation wavelength.33. The surface-emitting laser device as claimed in claim 30 , wherein the emitting surface is a top surface of the mesa structure claim 30 , and a side surface of the mesa structure is covered with a dielectric film.34. A surface-emitting laser array ...

OPTICAL MODULE

An optical module includes a circuit board, an optical fiber, an optical fiber monitoring chip, a laser chip, a laser driving chip and a lens assembly. A bottom surface of the lens assembly is covered above the laser chip and the optical monitoring chip. A groove is on a top surface of the lens assembly. A bottom of the groove protrudes to form a first interface and a second interface. The laser chip is configured to emit light. The first interface is configured to reflect the emitted light to obtain first reflected light. The second interface is configured to reflect a portion of the first reflected light to obtain a second reflected light and refract another portion of the first reflected light to obtain a first refracted light. The second reflected light is transmitted to the optical monitoring chip. The first refracted light is transmitted to the optical fiber. 1. An optical module , comprising:a circuit board;an optical fiber;an optical monitoring chip on a surface of the circuit board;a laser chip on the surface of the circuit board and between the optical fiber and the optical monitoring chip;a laser driving chip on the surface of the circuit board and between the optical monitoring chip and the laser chip; anda lens assembly whose bottom surface is covered above the laser chip and the optical monitoring chip,a groove on a top surface of the lens assembly and whose bottom protrudes to form a first interface and a second interface; the first interface is configured to reflect light emitted by the laser chip,', 'the second interface is configured to reflect a first portion of the reflected light and refract a second portion of the reflected light,', 'the optical monitoring chip is configured to receive the first portion of the reflected light, and', 'the optical fiber is configured to receive the second portion of the reflected light., 'wherein'}2. The optical module according to claim 1 , wherein a distance between the first interface and the second interface ...

ELECTRO-OPTIC MODULATOR DEVICE, OPTICAL DEVICE AND METHOD OF MAKING AN OPTICAL DEVICE

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region. 1. An electro-optic modulator device comprising: 'a doped region;', 'a modulation region comprisinga reflecting region over the modulation region;a conductive line connected to the doped region, wherein the conductive line extends through the reflecting region; andan anti-reflecting region on an opposite surface of the modulation region from the reflecting region.2. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a distributed Bragg reflector.3. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a number of reflecting layers ranging from about 10 layers to about 20 layers.4. The electro-optic modulator device of claim 1 , wherein the reflecting region comprises a plurality of reflecting layers claim 1 , each reflecting layer of the plurality of reflecting layers having a thickness ranging from about 60 nanometers (nm) to about 400 nm.5. The electro-optic modulator device of claim 1 , wherein the anti-reflecting region comprises a number of anti-reflecting layers ranging from about 3 layers to about 10 layers.6. The electro-optic modulator device of claim 1 , wherein the anti-reflecting region comprises a plurality of anti-reflecting layers claim 1 , each anti-reflecting layer of the plurality of anti-reflecting layers having a thickness ranging from about 230 nanometers (nm) to about 500 nm.7. The electro-optic modulator device of claim 1 , wherein the modulation region comprises Si claim 1 , Ge or SiGe.8. The electro-optic modulator device of ...

Semiconductor light-emitting device and manufacturing method for the same

The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS

A laser includes: a substrate; a first reflector including pairs of high and low refractive index layers; an active region forming a resonator; a second reflector including an emission surface and pairs of high and low refractive index layers; an extending region thicker than oscillation wavelength, extending the length of the resonator, and including a conductive semiconductor material; a confining layer including a high refractive index region and a surrounding low refractive index region; and an additional film allowing the oscillation wavelength to transmit therethrough. The first and second reflectors, the extending region, and the active region determine a reflection band including resonance wavelengths, in one of which oscillation occurs. The additional film includes central and outer circumferential portions having different thicknesses to suppress resonance in the high refractive index region and the extending region. The central and outer circumferential portions overlap the high and low refractive index regions, respectively. 1. A surface emitting semiconductor laser comprising:a substrate;a first semiconductor multilayer reflector formed on the substrate, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index;an active region formed on or above the first semiconductor multilayer reflector, and forming a resonator;a second semiconductor multilayer reflector formed on or above the active region, and including an emission surface and laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index;a cavity extending region formed between the first semiconductor multilayer reflector and the active region or between the second semiconductor multilayer reflector and the active region, having an optical film thickness greater than an ...

Semiconductor device and fabrication method

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth.

VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes an active layer having a quantum well structure, a first laminate for a first distributed Bragg reflector, and a first spacer region provided between the active layer and the first laminate. A barrier layer of the quantum well structure includes a first compound semiconductor containing aluminum as a group m constituent element. The first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor. A concentration of first dopant in the first laminate is larger than a concentration of the first dopant in the first portion of the first spacer region. The concentration of the first dopant in the first portion of the first spacer region is larger than a concentration of the first dopant in the second portion of the first spacer region. 1. A vertical cavity surface emitting laser comprising:an active layer having a quantum well structure including a well layer and a barrier layer,a first laminate for a first distributed Bragg reflector; anda first spacer region provided between the active layer and the first laminate, whereinthe barrier layer includes a first compound semiconductor containing aluminum as a group m constituent element,the first spacer region includes a second compound semiconductor having a larger aluminum composition than the first compound semiconductor,the first spacer region includes a first portion and a second portion,the first laminate, the first portion of the first spacer region, the second portion of the first spacer region, and the active layer are arranged along a direction of a first axis,the first portion of the first spacer region and the first laminate contain first dopant,the first portion of the first spacer region is provided from the first laminate to the second portion of the first spacer region,the second portion of the first spacer region is provided from the active layer to the first portion of the first spacer ...

Inherently safe laser arrangement comprising a vertical cavity surface emitting laser

A laser arrangement has an array of Vertical Cavity Surface Emitting Lasers (VCSELs) and an optical structure. The VCSELs are on a semiconductor substrate and have: first and second electrodes, first and second Bragg reflectors, and an active layer between the Bragg reflectors. The electrodes provide an electrical current across the active layer. The VCSELs are bottom emitters and emit laser light through the semiconductor substrate. The optical structure increases a laser emission angle of the laser light for eye safety. The optical structure includes a surface structure of the semiconductor substrate. A thickness of the semiconductor substrate is arranged such that laser light emitted by neighboring VCSELs intersect with each other in a plane of the surface structure. The surface structure is arranged such that a homogeneous emission of an emission surface of the semiconductor substrate is enabled.

TECHNIQUES FOR VERTICAL CAVITY SURFACE EMITTING LASER OXIDATION

Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:a substrate;a VCSEL structure overlying the substrate, wherein the VCSEL structure comprises a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors; anda first spacer laterally enclosing the second reflector, wherein the first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.2. The VCSEL device of claim 1 , wherein the second reflector comprises a plurality of recesses disposed along the sidewall of the second reflector.3. The VCSEL device of claim 2 , wherein the first spacer continuously extends from an upper surface of the optically active region to the plurality of recesses of the second reflector.4. The VCSEL device of claim 2 , wherein the first plurality of protrusions directly contacts the plurality of recesses.5. The VCSEL device of claim 1 , further comprising:a masking layer overlying the VCSEL structure, wherein the first plurality of protrusions extends along a sidewall of the masking layer.6. The VCSEL device of claim 5 , further comprising:a second spacer laterally enclosing the first spacer and the VCSEL structure, wherein the second spacer comprises a second plurality of protrusions that extends along a sidewall of the first spacer.7. The VCSEL device of claim 6 , wherein an upper surface of the masking layer claim 6 , an upper surface of the first spacer claim 6 , and an upper surface of the second spacer are aligned.8. The ...

Semiconductor light emitting element

A semiconductor light emitting element includes an electrode 8 , an active layer 3 , a photonic crystal layer 4 , and an electrode 9 . Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8 , the active layer 3 , the photonic crystal layer 4 , and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8 a 2 of the opening 8 a when viewed from the axis line direction of the X-axis. The end 9 e 1 of the electrode 9 and the end 8 e 1 of the opening 8 a substantially coincide with each other when viewed from the axis line direction of the X-axis.

Rigid High Power and High Speed Lasing Grid Structures

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises (1) a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure, and (2) an electrical waveguide configured to provide current to the laser regions. 1. An apparatus comprising:a single laser emitting epitaxial structure that comprises a plurality of laser regions, each laser region of the single laser emitting epitaxial structure being electrically isolated within the single laser emitting epitaxial structure itself relative to the other laser regions of the single laser emitting epitaxial structure; andan electrical waveguide configured to provide current to the laser regions.2. The apparatus of wherein the electrical waveguide comprises a plurality of electrical contacts located on a second platform or chip.3. The apparatus of wherein the single laser emitting epitaxial structure comprises a single vertical cavity surface emitting laser (VCSEL) epitaxial structure.4. The apparatus of wherein the single VCSEL epitaxial structure does not include a plurality of mesas.5. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of holes extending therethrough claim 1 , each hole having a layer of oxidation around it claim 1 , the holes and the oxidation layers being positioned to define and electrically isolate the laser regions.6. The apparatus of wherein the single laser emitting epitaxial structure further comprises a plurality of conductive regions formed by ion implantation claim 1 , the ion implantation being positioned to define and electrically isolate the laser regions.7. The apparatus of further ...

SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS

The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: 2. The surface emitting laser according to claim 1 , wherein the difference L satisfies the following expression:{'br': None, 'i': +N', 'L', '+N, '(0.36)λ<||<(0.64)λ'}where N is an integer.3. The surface emitting laser according to claim 1 , wherein the difference L satisfies the following expression:{'br': None, 'i': +N', 'L', '+N, '(0.39)λ<||<(0.61)λ'}where N is an integer.4. The surface emitting laser according to claim 1 , wherein the absolute value of the difference L is (½+N)λ.5. The surface emitting laser according to claim 1 , wherein the integer N is 0.6. The surface emitting laser according to claim 1 , wherein an optical thickness of the first portion and an optical thickness of the second portion are respectively an integral multiple of λ/2.7. The surface emitting laser according to claim 1 , wherein the first stepped structure includes a dielectric material.8. The surface emitting laser according to claim 1 , wherein the second stepped structure includes a semiconductor.9. The surface emitting laser according to claim 1 , wherein the second stepped structure includes a third portion extending in a third area defined in a central part of the emission area and a fourth portion extending in a fourth area defined on the outer side of the third area within the emission area claim 1 , the third and fourth portions having different heights.10. The surface emitting laser according to claim 9 , wherein at least ...

Monolithic wdm vcsel arrays by quantum well intermixing

An array of monolithic wavelength division multiplexed (WDM) vertical cavity surface emitting lasers (VCSELs) is provided with quantum well intermixing. Each VCSEL includes a bottom distributed Bragg reflector (DBR), an upper distributed Bragg reflector, and a laser cavity therebetween. The laser cavity includes a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) and an upper SCH layer. Each MQW region experiences a different amount of quantum well intermixing and concomitantly a different lasing wavelength shift.

OPTICAL DEVICE HAVING A SUBSTRATE AND A LASER UNIT THAT EMITS LIGHT INTO THE SUBSTRATE

An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough. 1. An optical device comprising: a laser unit, having an active layer laminated between the first surface and the second surface and emitting light into the first substrate from the active layer;', 'a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, provided on the first surface reflecting the light emitted from the laser unit and propagating, toward the second surface; and', 'a convex lens, integrally provided within a region of the second surface, the region including an optical axis of the light reflected by the reflecting mirror; and, 'a first substrate, formed of a semiconductor material and having a first surface and a second surface which is a rear surface of the first surface, the first substrate comprisinga second substrate, having a third surface facing the second surface, and being provided with a grating coupler and an optical waveguide on the third surface thereof, the optical waveguide having light incident on the grating coupler propagating therethrough, wherein the optical axis of the light reflected by the reflecting mirror obliquely intersects a normal line of second surface, wherein the ...

OPTICAL DEVICE AND SYSTEM HAVING THERMAL BUFFERS

A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure. 1. A vertical-cavity surface-emitting laser (VCSEL) device , comprising:a first distributed Bragg reflector (DBR) structure of a first conductivity type;a second DBR structure of a second conductivity type, the second conductivity type being different than the first conductivity type;at least one quantum well structure positioned between the first DBR structure and the second DBR structure to generate light; anda first thermal buffer layer positioned between the at least one quantum well structure and the first DBR structure,wherein a thickness ‘d’ of the first thermal buffer layer satisfies the following equation:{'sub': T', 'T, 'd<√{square root over (DΔt)}, where Dis a thermal diffusivity of the first thermal buffer layer, and Δt is a pulse width of a signal that generates a current received by the at least one quantum well structure.'}2. The VCSEL device of claim 1 , further comprising:a second thermal buffer layer positioned between the at least one quantum well structure and the second DBR structure.3. The VCSEL device of claim 2 , wherein the first thermal buffer layer and the second thermal buffer layer are sufficiently thick to keep the heat generated in the first and second DBR structures from reaching the at least one quantum well structure for a duration of an electrical pulse of the signal.4. The VCSEL device of ...

Photonic crystal surface-emitting lasers

A photonic-crystal surface-emitting laser (PCSEL) includes a gain medium electromagnetically coupled to a photonic crystal whose energy band structure exhibits a Dirac cone of linear dispersion at the center of the photonic crystal's Brillouin zone. This Dirac cone's vertex is called a Dirac point; because it is at the Brillouin zone center, it is called an accidental Dirac point. Tuning the photonic crystal's band structure (e.g., by changing the photonic crystal's dimensions or refractive index) to exhibit an accidental Dirac point increases the photonic crystal's mode spacing by orders of magnitudes and reduces or eliminates the photonic crystal's distributed in-plane feedback. Thus, the photonic crystal can act as a resonator that supports single-mode output from the PCSEL over a larger area than is possible with conventional PCSELs, which have quadratic band edge dispersion. Because output power generally scales with output area, this increase in output area results in higher possible output powers.

LIGHT EMITTING ELEMENT AND METHOD OF PRODUCING SAME

Light emitting elements, and methods of producing the same, the light emitting elements including: a laminated structure, the laminated structure including a first compound semiconductor layer that includes a first surface and a second surface facing the first surface, an active layer that is in contact with the second surface of the first compound semiconductor layer, and a second compound semiconductor layer; where the first surface of the first compound semiconductor layer has a first surface area and a second surface area, the first and second surface areas being different in at least one of a height or a roughness, a first light reflection layer is formed on at least a portion of the first surface area, and a first electrode is formed on at least a portion of the second surface area.

MONOLITHICALLY INTEGRATED SURFACE EMITTING LASER WITH MODULATOR

A surface emitting laser includes a structure in which a semiconductor substrate, a lower DBR, and an active layer are layered. A VCSEL (vertical cavity surface emitting laser) and an EAM (electro-absorption modulator) are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled. The EAM outputs an emitted light in a direction that is orthogonal to the substrate. The width of a waveguide region of the VCSEL defined in the second direction is narrower than the width of a waveguide region of the EAM. 1. An surface emitting laser comprising:a semiconductor substrate;a lower distributed Bragg reflector formed on the semiconductor substrate;an active layer formed on the lower distributed Bragg reflector; andan upper distributed Bragg reflector formed on the active layer,wherein a vertical cavity surface emitting laser and an electro-absorption modulator are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled,and wherein a width of a waveguide region included in the vertical cavity surface emitting laser, defined in a second direction that is orthogonal to the first direction defined on the substrate plane, is narrower than a width of a waveguide region of the electro-absorption modulator defined in the second direction,and wherein the electro-absorption modulator outputs an emitted light in a direction that is orthogonal to the substrate.2. The surface emitting laser according to claim 1 , wherein claim 1 , in the vertical cavity surface emitting laser claim 1 , transverse modes are formed using reflection that occurs on a face that connects the vertical cavity surface emitting laser and the electro-absorption modulator.3. The surface emitting laser according to claim 1 , wherein claim 1 , the output is taken from the end portion of the electro-absorption modulator claim 1 , wherein claim 1 , the top reflectivity is lower than that in the ...

SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR

A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less. 1. A surface emitting laser element comprising:a lower Bragg reflection mirror;an upper Bragg reflection mirror; anda resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer,wherein a wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror,wherein the wavelength adjustment region includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed,wherein an optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, andwherein the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side where the resonator region is formed is approximately M×λ/2,where λ is a wavelength of emitted light, M and N are positive integers, and M is less than or equal to N.2. A surface emitting laser element comprising:a lower Bragg ...

METHOD FOR DRIVING LIGHT SOURCE APPARATUS AND SURFACE EMITTING LASER, AND IMAGE ACQUIRING APPARATUS

A light source apparatus includes a surface emitting laser including a movable mirror, a mirror arranged opposite to the movable mirror, and an active layer arranged between the two mirrors, a mirror driving unit configured to move the movable mirror to a position where laser oscillation is not performed, a laser driving unit configured to inject current into the surface emitting laser, a storage unit configured to store position information of the movable mirror, the position information including a mirror position where laser oscillation is not performed and a mirror position where laser oscillation is performed, and a control unit configured to control the laser driving unit and to determine start timing of the current injection into the surface emitting laser according to the position information output from the storage unit. 1. A light source apparatus comprising:a surface emitting laser including a movable mirror, a mirror arranged opposite to the movable mirror, and an active layer arranged between the two mirrors;a mirror driving unit configured to move the movable mirror to a position where laser oscillation is not performed;a laser driving unit configured to inject current into the surface emitting laser;a storage unit configured to store position information of the movable mirror, the position information including a mirror position where laser oscillation is not performed and a mirror position where laser oscillation is performed; anda control unit configured to control the laser driving unit and to determine start timing of the current injection into the surface emitting laser according to the position information output from the storage unit.2. The light source apparatus according to claim 1 , whereinthe laser driving unit is configured to start the current injection into the surface emitting laser after the movable mirror has moved to a position where a wavelength with no light emitting gain becomes a resonant wavelength of the surface emitting laser, ...

SURFACE LIGHT-EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHIC IMAGING APPARATUS HAVING THE SAME

A surface light-emitting laser comprising an upper reflector, a lower reflector, and an active layer interposed therebetween, wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance, and an optical distance between the lower reflector and the active layer is referred to as a second distance, positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that the ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value. 1. A laser comprising an upper reflector , a lower reflector , and an active layer interposed therebetween , wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance , and an optical distance between the lower reflector and the active layer is referred to as a second distance ,positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that a ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value.2. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is configured to be kept within a range of ±20% from a certain value.3. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is kept within a range of ±5% from a certain value.4. The laser according to claim 1 , wherein the upper reflector and the lower reflector are displaced at a same cycle and in opposite phases.5. The laser according to claim 1 , wherein the ratio between the first distance and the second distance is configured to be kept as an integer ratio.6. The laser according to claim 1 , wherein the upper reflector and the lower reflector are displaced at same amplitude claim 1 , and the active layer is arranged at ...

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes: an active layer; a first laminate for a first distributed Bragg reflector; and a first intermediate layer disposed between the active layer and the first laminate. The first intermediate layer has first and second portions. The first laminate, the first and second portions of the first intermediate layer, and the active layer are arranged along a direction of a first axis. The first laminate and the first portion of the first intermediate layer each include a first dopant. The active layer has a first-dopant concentration of less than 1×10cm. The first portion of the first intermediate layer has a first-dopant concentration smaller than that of the first laminate. The second portion of the first intermediate layer has a first-dopant concentration smaller than that of the first portion of the first intermediate layer. 1. A vertical cavity surface emitting laser comprising:an active layer;a first laminate for a first distributed Bragg reflector; anda first intermediate layer disposed between the active layer and the first laminate,the first intermediate layer having a first portion and a second portion,the first laminate, the first portion and the second portion of the first intermediate layer, and the active layer being arranged along a direction of a first axis,the first laminate and the first portion of the first intermediate layer each including a first dopant,{'sup': 16', '−3, 'the active layer having a concentration of the first dopant of less than 1×10cm,'}the first portion of the first intermediate layer extending from the first laminate to the second portion of the first intermediate layer,the second portion of the first intermediate layer extending from the first portion of the first intermediate layer to the active layer,the first portion of the first intermediate layer having a concentration of the first dopant smaller than that of the first laminate, andthe second portion of the first intermediate layer ...

SEMICONDUCTOR MODIFICATION PROCESS AND STRUCTURES

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaNand modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads. 1. A fabrication process for electronic components comprising the following steps:depositing a mask feature onto a GaN p-layer to form a structure wherein some areas of the structure are protected by the mask feature and others are not, forming unprotected mask regions; andwherein processing of unprotected mask regions is capable of forming areas with modified electrical characteristics.2. A fabrication process for electronic components according to claim 1 , wherein the processing of unprotected mask regions causes a reversal in the effective doping of the p-GaN regions such that it behaves as n-doped GaN.3. A fabrication process for electronic components according to claim 1 , wherein the process comprises:exposing the structure to a plasma treatment;wherein the areas not protected by the mask feature are exposed to the plasma treatment and form modified n-doped behaving regions due to the plasma and the areas protected by the mask are shielded from the plasma treatment and remain unmodified p-GaN.4. A fabrication process for electronic components according to claim 3 , wherein after plasma treatment claim 3 , an annealing process is applied to the structure claim 3 , and wherein optionally the mask is removed or retained ...

QUANTUM CASCADE LASER WITH ANGLED ACTIVE REGION AND RELATED METHODS

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate. 1. A quantum cascade laser (QCL) comprising:a substrate;at least one emitting facet;semiconductor layers adjacent said substrate and defining an active region;said active region having a longitudinal axis canted at an oblique angle to said at least one emitting facet; andan optical grating being adjacent said active region and configured to emit one of a continuous wave (CW) laser output or a pulsed laser output through said at least one emitting facet.2. The QCL of wherein said optical grating defines a plurality of ridges substantially parallel with the longitudinal axis of said active region.3. The QCL of wherein said optical grating comprises a Bragg grating.4. The QCL of wherein said active region is configured to operate in a single lateral mode.5. The QCL of wherein said optical grating comprises a shallow ridge configuration grating with etching stopped before reaching said active region; and further comprising an electrical contact strip coupled to said semiconductor layers.6. The QCL of wherein said electrical contact strip has a width configured to control an effective active region width.7. The QCL of wherein said active region has a thickness less than or equal to 1.3 μm; and wherein said active region has a width greater than or equal to 20 μm.8. The QCL of wherein said active region has an elongate shape extending laterally across said substrate.9. A quantum cascade laser (QCL) system comprising: a substrate,', 'at least one emitting facet,', 'semiconductor layers adjacent said substrate and defining an active region,', 'said ...

LIGHT-EMITTING DEVICE

A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer. 1. A light-emitting device comprising:an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence;an electrode on the epitaxial structure;a current blocking layer between the contact layer and the electrode;a first opening formed in the current blocking layer; anda second opening formed in the electrode and within the first opening;wherein a part of the electrode fills in the first opening and contacts the contact layer.2. The light-emitting device according to claim 1 , further comprising a substrate under the epitaxial structure claim 1 , wherein the substrate has a first width claim 1 , the epitaxial structure comprises a ridge having a width smaller than the first width of the substrate and comprises an exposed mesa wall claim 1 , and the current blocking layer covers the exposed mesa wall.3. The light-emitting device according to claim 2 , wherein the electrode covers the exposed mesa wall claim 2 , and wherein the current blocking layer is between the exposed mesa wall and the electrode.4. The light-emitting device according to claim 1 , wherein each layer of the second DBR stack consists essentially of a Group III-V semiconductor material5. The light-emitting device according to claim 1 , wherein the conductivity of a portion of the second DBR stack right under the first opening is substantially the same as the conductivity of the other portion of the second DBR ...

SURFACE-EMITTING LASER

A surface-emitting laser includes a substrate having a principal surface; an active layer provided on the principal surface of the substrate; a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector; a first contact layer disposed between the active layer and the first stacked layer; a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface inclined relative to the substrate principle surface, and a lower end; and a first electrode that contacts the first contact layer at the side surface of the post. 1. A surface-emitting laser comprising:a substrate having a principal surface;an active layer provided on the principal surface of the substrate;a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector;a first contact layer disposed between the active layer and the first stacked layer;a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface, and a lower end; anda first electrode that contacts the first contact layer at the side surface of the post.2. The surface-emitting laser according to claim 1 , further comprising:an intermediate stacked layer provided between the first contact layer and the active layer,wherein the first contact layer has a side surface that constitutes a portion of the side surface of the post, andthe side surface of the first contact layer extends from an edge at a boundary between the first contact layer and the first stacked layer to an edge at a boundary between the first contact layer and the intermediate stacked layer.3. The surface-emitting laser according to claim 1 , wherein the side surface of the post is widened out in a ...

Vertical cavity surface emitting laser element and electronic apparatus

[Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR

A surface emitting laser element includes a lower DBR formed on a substrate; an active layer formed above the lower DBR; an upper DBR formed on the active layer. The upper DBR includes a dielectric multilayer that is formed as a result of dielectrics having different refractive indexes being alternately laminated and formed, a light shielding part is formed above the upper DBR, and the light shielding part has an opening at a central area for emitting light. 1. A surface emitting laser element , comprising:a lower DBR formed on a substrate;an active layer formed above the lower DBR;an upper DBR formed above the active layer, whereinthe upper DBR includes a dielectric multilayer that is made of dielectrics having different refractive indexes being alternately laminated and formed,a light shielding part is formed above the upper DBR, andthe light shielding part has an opening at a central area for emitting light.2. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'light emitted from the opening has a divergence angle, at which intensity of the light becomes 1/e, greater than or equal to 20 degrees.'}3. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'an area of the opening is less than or equal to 30 μm.'}4. The surface emitting laser element as claimed in claim 1 , wherein{'sup': '2', 'an area of the opening is less than or equal to 20 μm.'}5. The surface emitting laser element as claimed in claim 1 , whereinthe light shielding part is made of a metallic material or a material that absorbs the light.6. The surface emitting laser element as claimed in claim 1 , further comprising:a contact layer formed between the active layer and the dielectric multilayer of the upper DBR, whereinone electrode is connected with the contact layer.7. The surface emitting laser element as claimed in claim 1 , further comprising:a wavelength adjustment layer between the active layer and the dielectric multilayer of the upper ...

Optical modulator having reflection layers

An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

Vertical cavity surface emitting laser

The disclosure relates to a Vertical Cavity Surface Emitting Laser ( 100 ) comprising a first electrical contact ( 105 ), a substrate ( 110 ), a first Distributed Bragg Reflector ( 115 ), an active layer ( 120 ), a second Distributed Bragg Reflector ( 130 ) and a second electrical contact ( 135 ). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers ( 125 ) arranged below or above the active layer ( 120 ), wherein each of the current aperture layers ( 125 ) comprises one Al y Ga (1-y) As-layer, wherein a first current aperture layer ( 125 a ) of the at least two current aperture layers ( 125 ) is arranged nearer to the active layer ( 120 ) as a second current aperture layer (125 b ) of the at least two current aperture layers ( 125 ), wherein the first current aperture layer ( 125 a ) comprises a first current aperture ( 122 a ) with a bigger size as a second current aperture ( 122 b ) of the second current aperture layer ( 125 b ). The disclosure also relates to a method of manufacturing such a VCSEL ( 100 ).

SEMICONDUCTOR LASER DEVICE

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer , a pair of cladding layers and sandwiching the active layer , and a diffraction grating layer which is optically connected to the active layer . The spatial light modulator SLM includes a transparent common electrode , a plurality of transparent pixel electrodes , a liquid crystal layer LC arranged between the common electrode and the pixel electrodes . A laser beam output in a thickness direction of the diffraction grating layer is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside. 1. A semiconductor laser device comprising:a semiconductor laser chip; anda spatial light modulator which is optically connected to the semiconductor laser chip, wherein an active layer,', 'a pair of cladding layers sandwiching the active layer, and', 'a diffraction grating layer which is optically connected to the active layer, and, 'the semiconductor laser chip includes'} a transparent common electrode,', 'a plurality of transparent pixel electrodes, and', 'a liquid crystal layer arranged between the common electrode and the pixel electrodes,, 'the spatial light modulator includes'}the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input, modulating a phase of the laser beam in each minute region with a driving voltage applied between the pixel electrodes and the common electrode, and transmitting and outputting, to the outside, the laser beam the phase of which is modulated.2. The semiconductor laser device according to claim 1 , further comprising a selection circuit which is arranged on the semiconductor laser chip and which is configured to supply the driving voltage selectively between one of ...

SURFACE-EMITTING SEMICONDUCTOR LASER, METHOD FOR PRODUCING THE SAME, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE

A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. 1. A surface-emitting semiconductor laser comprising:a first semiconductor multilayer film reflector;an active region;a second semiconductor multilayer film reflector; anda current confinement layer including an oxidized region formed by selective oxidation, a first semiconductor layer having a relatively high Al content,', 'a second semiconductor layer adjacent to the first semiconductor layer, the second semiconductor layer being disposed on an active-region side of the first semiconductor layer, the second semiconductor layer having a lower Al content than the first semiconductor layer, and', 'a composition-gradient layer adjacent to the first semiconductor layer, the composition-gradient layer being disposed on a side of the first semiconductor layer which is opposite to the active-region side on which the second semiconductor layer is disposed, and, 'wherein the current confinement layer includes'}wherein a portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.2. The surface-emitting semiconductor laser according to claim ...

HIGH-EFFICIENCY OXIDE VCSEL MANUFACTURING METHOD THEREOF

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof. 1. An oxide vertical cavity surface emitting laser (VCSEL) having a conductive current spreading layer formed between a top electrode and a top distributed Bragg reflector to pass laser having a peak wavelength of 860±10 nm.2. The VCSEL according to claim 1 , wherein the conductive current spreading layer is a non-oxidizing barrier layer.3. The VCSEL according to claim 2 , wherein the non-oxidizing barrier layer is an Al-free layer.4. The VCSEL according to claim 1 , wherein the current spreading layer is a GaP layer.5. The VCSEL according to claim 1 , wherein the GaP layer includes a metallic and/or non-metallic dopant.6. The VCSEL according to claim 5 , wherein the dopant is selected from a group including Mg claim 5 , Zn and carbon as the dopant.7. The VCSEL according to claim 5 , wherein the GaP layer has a thickness of 1 μm or larger.8. The VCSEL according to claim 1 , wherein the VCSEL includes a bottom electrode claim 1 , a substrate claim 1 , a bottom distributed Bragg reflector claim 1 , an active layer claim 1 , a top distributed Bragg reflector claim 1 , a top electrode and an oxidized layer.9. The VCSEL according to claim 8 , wherein the active layer is configured of a GaAs quantum well and an AlGaAs quantum barrier layer.10. The VCSEL according to claim 8 , wherein the thickness of the GaP is 3 μm.11. The VCSEL according to claim 8 , wherein the oxidized layer is positioned between layers of a top p-DBR.12. The VCSEL according to claim 8 , wherein the oxide CSEL operates at a current of 10 to 40 mA.13. The VCSEL according to claim 8 , wherein the top electrode is a transparent electrode selected among indium tin oxide (ITO) claim 8 , ZnO and AZO.14. The VCSEL according to claim 8 , ...

High-efficiency oxide vcsel with improved light extraction, and manufacturing method thereof

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

RESONANT CAVITY STRAINED GROUP III-V PHOTODETECTOR AND LED ON SILICON SUBSTRATE AND METHOD TO FABRICATE SAME

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiGe, where 0.8 Подробнее

BACK-SIDE-EMITTING VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) WAFER BONDED TO A HEAT-DISSIPATION WAFER, DEVICES AND METHODS

A wafer-to-wafer bonded arrangement is provided comprising a VCSEL wafer and a highly thermally-conductive (HTC) wafer that are bonded together with the front side of the VCSEL wafer bonded to the HTC wafer. The VCSEL wafer is fabricated to include, at least initially, a native substrate. The HTC wafer includes a thermally-conductive, non-native substrate. All or a portion of the native substrate may be removed after performing wafer-to-wafer bonding. In effect, the HTC wafer becomes the substrate of the bonded pair. During operation of VCSEL dies diced from the bonded wafer, heat generated by the dies flows into the non-native substrate where the heat spreads out and is dissipated. Laser light generated by the VCSEL die is emitted through the back side of the VCSEL die. 1. A wafer-to-wafer bonded arrangement comprising:a highly thermally-conductive (HTC) wafer, the HTC wafer comprising a non-native substrate; and an epitaxial (epi) structure having a first side and a second side, the epi structure comprising a first distributed Bragg reflector (DBR) adjacent the second side of the epi structure, a second DBR adjacent the first side of the epi structure, and one or more layers comprising a quantum well (QW) region disposed in between the first DBR and the second DBR, the first DBR having a first electrical conductivity type and the second DBR having a second electrical conductivity type that is different from the first electrical conductivity type; and', 'a first contact metal layer disposed on the front side of the VCSEL wafer and in contact with the first DBR, the first contact metal layer being bonded to a top surface of the HTC wafer, wherein the VCSEL wafer has a plurality of first trenches formed therein that pass through the first contact metal layer, through the second side of the epi structure and extend a distance into the epi structure without passing through the epi structure., 'a vertical cavity surface emitting laser (VCSEL) wafer having a front side ...

METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

A method for producing a light-emitting device includes oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion; heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and after the light-emitting element portion is heated, forming a protective film on the side face. 1. A method for producing a light-emitting device , comprising:oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion;heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; andafter the light-emitting element portion is heated, forming a protective film on the side face.2. The method according to claim 1 , wherein the light-emitting element portion is heated to a temperature at which aluminum hydroxide in the current confinement layer is converted into aluminum oxide.3. The method according to claim 1 , wherein the light-emitting element portion is heated in an inert gas atmosphere.4. The method according to claim 1 , wherein the light-emitting element portion is heated by replacing claim 1 , with an inert gas claim 1 , a gas in an oxidation furnace where a wafer including the light-emitting element portion formed thereon is held and by heating the wafer at reduced pressure.5. The method according to claim 1 , wherein the protective film is formed on the side face by chemical vapor deposition while being ...

High Resolution Structured Light Source

A structured light source comprising VCSEL arrays is configured in many different ways to project a structured illumination pattern into a region for 3 dimensional imaging and gesture recognition applications. One aspect of the invention describes methods to construct densely and ultra-densely packed VCSEL arrays with to produce high resolution structured illumination pattern. VCSEL arrays configured in many different regular and non-regular arrays together with techniques for producing addressable structured light source are extremely suited for generating structured illumination patterns in a programmed manner to combine steady state and time-dependent detection and imaging for better accuracy. Structured illumination patterns can be generated in customized shapes by incorporating differently shaped current confining apertures in VCSEL devices. Surface mounting capability of densely and ultra-densely packed VCSEL arrays are compatible for constructing compact on-board 3-D imaging and gesture recognition systems. 1. A projection apparatus for generating high resolution structured illumination pattern comprising:an optical source including one or more VCSEL arrays, wherein each VCSEL array including at least 5000, but no more than 500,000 VCSEL devices separated from adjacent VCSEL devices by a distance that is no more than 5 μm is configured to generate a desired one or more high resolution structured illumination patterns, and wherein each VCSEL array has an area proportional to the size of the VCSEL array; anda projection device including at least one optical element to magnify and project the desired one or more illumination patterns on to an area distal to the optical source.2. The projection apparatus as in claim 1 , wherein the VCSEL devices comprise a planar device structure that includes a two-reflector claim 1 , extended cavity three-reflector and external cavity three-reflector configurations that are wafer scale integrated using methods selected from a ...

Resonant Cavity Strained Group III-V Photodetector And LED On Silicon Substrate And Method To Fabricate Same

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiGe, where 0.8 Подробнее

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

A vertical cavity surface emitting laser includes: a supporting base: and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately arranged. The first semiconductor layers each have a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately arranged. The first layers each have a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion. 1. A vertical cavity surface emitting laser comprising:a supporting base: anda post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region, and the upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region being arranged on the supporting base,the lower distributed Bragg reflecting region including first semiconductor layers and second semiconductor layers alternately arranged,the first semiconductor layers each having a refractive index lower than that of each of the second semiconductor layers,the upper distributed Bragg reflecting region including first layers and second layers alternately arranged,the first layers each having a group III-V compound semiconductor portion and a group III oxide portion,the group III-V compound semiconductor portion containing aluminum as a group III constituent element, andthe group III oxide portion surrounding the group ...

High-Speed VCSEL Device

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface. 1. A Vertical Cavity Surface Emitting Laser (VCSEL) comprising:a) a reflecting surface of the VCSEL; i. a first and second multiple quantum well stack;', 'ii. a tunnel junction positioned between the first and second multiple quantum well stack; and', 'iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; and, 'b) a gain region positioned on the reflective surface that generates optical gain, the gain region comprising 'wherein at least one of the reflecting surface or the partially reflective surface comprises a sub-wavelength grating structure.', 'c) a partially reflective surface, the reflective surface, and the partially reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface,'}2. (canceled)3. (canceled)4. The VCSEL of wherein the reflecting surface comprises a sub-wavelength grating structure.5. The VCSEL of wherein the partially reflecting surface comprises a sub-wavelength grating structure.6. The VCSEL of wherein the reflecting surface comprises a combination of a distributed Bragg reflector and a sub-wavelength grating structure.7. (canceled)8. (canceled)9. (canceled)10. The VCSEL of wherein the partially ...

Protection for the epitaxial structure of metal devices

Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

SURFACE-EMITTING LASER STRUCTURE WITH HIGH HEAT DISSIPATION

The present invention comprises a thermally-conductive and electrically-conductive substrate, a bonding layer, a galvanic isolation layer, a P-type electrode, a P-type Bragg reflection layer, a diode light-emitting layer, an N-type Bragg band-pass reflection layer and an N-type electrode stacked in sequence. The galvanic isolation layer comprises a cylindrical opening for accommodating the diode light-emitting layer. The N-type electrode comprises a light-output opening facing the cylindrical opening and completely covering the cylindrical opening. When current input by the N-type electrode passes through the N-type Bragg band-pass reflection layer, it is concentrated under constraint of the galvanic isolation layer and passes through the diode light-emitting layer via the cylindrical opening according to correspondence in position and size of the cylindrical opening and the light-output opening. Thus, light-emitting efficiency, response speed, and the effective light-emitting area are increased effectively, without use of an oxidized metal layer. 1. A surface-emitting laser structure with high heat dissipation , comprising:a thermally-conductive and electrically-conductive substrate;a bonding layer disposed on the thermally-conductive and electrically-conductive substrate;a galvanic isolation layer disposed on the bonding layer, comprising a cylindrical opening;a P-type electrode disposed in the cylindrical opening and located on the bonding layer;a P-type Bragg reflection layer disposed on the P-type electrode and located in the cylindrical opening;a diode light-emitting layer located in the cylindrical opening, and disposed on the P-type Bragg reflection layer;an N-type Bragg band-pass reflection layer disposed on the diode light-emitting layer, filling the cylindrical opening and covering the galvanic isolation layer;an N-type electrode disposed on the N-type Bragg band-pass reflection layer, comprising a light-output opening facing the cylindrical opening, a ...

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminium molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL. Thus, proposed VCSEL device maintains lower junction temperature for achieving stable high-speed operations at high ambient temperature, thereby improving its performance. 1. A vertical cavity surface emitting laser device comprising:a bottom distributed Bragg reflector;a top distributed Bragg reflector;an active layer formed between the bottom distributed Bragg reflector and the top distributed Bragg reflector, arranged for generating laser light with a predetermined emission wavelength;at least one oxide section formed between top distributed Bragg reflector and active layer;a top electrode layer with a first window exposed formed above the top distributed Bragg reflector;a first heat dissipation layer sandwiched between the top distributed Bragg reflector and the top electrode layer; anda contact layer formed between the top electrode layer and the first heat dissipation layer, and a graded index layer formed between the top distributed Bragg reflector and the first heat dissipation layer.2. ...

SURFACE EMITTING QUANTUM CASCADE LASER

A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating. 1. A surface emitting quantum cascade laser comprising:an active layer including a plurality of quantum well layers stacked therein and being capable of emitting laser light by intersubband transition; anda first semiconductor layer provided on the active layer and having a first surface, the first surface including an internal region in which first pits constitute a first two-dimensional grating and an outer peripheral region in which second pits constitute a second two-dimensional grating, grating pitch of the first pits being m times (where m being an integer of 1 or more) grating pitch of the second pits, and the outer peripheral region surrounding the internal region,a first planar shape of an opening end of the first pit being asymmetric with respect to a line passing through barycenter of the first planar shape and being parallel to at least one side of the first two-dimensional grating,a second planar shape of an opening end of the second pit being symmetric with respect to each of lines passing through barycenter of the second planar shape and being parallel to either side of the second ...

MONOLITHICALLY INTEGRATED NANOEMITTER LIGHT SOURCE ASSEMBLY

Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications. 1. A monolithically integrated assembly of nanoemitters of light having at least one specified emission wavelength in response to at least one input wavelength generated in the assembly , the assembly comprising:a light emitter configured to generate light in the assembly at the at least one input wavelength in response to an electrical input signal, and a waveguide, including a waveguiding dimension sized to be capable of receiving and guiding light at the at least one input wavelength;', 'a quantum dot arrangement, arranged to receive the at least one input wavelength of light and, in response, to generate responsive light; and', 'a light filter, arranged to receive the responsive light from the quantum dot arrangement and, in response, to emit light from the assembly at a specified emission wavelength and to block light at the at least one input wavelength., 'a plurality of nanoemitters, configured to receive light from the light emitter, an individual one of the nanoemitters including2. The assembly of claim 1 , in which an individual one of the nanoemitters is coupled to:a corresponding transistor, arranged to selectively control light emission from the nanoemitter in response to a control signal received by the transistor.3. The assembly of claim 1 , wherein the at least one input wavelength is less than about 500 nanometers.4. The assembly of claim 1 , ...

DOUBLE ETCH STOP LAYER TO PROTECT SEMICONDUCTOR DEVICE LAYERS FROM WET CHEMICAL ETCH

In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer. 1. A method of forming a package assembly , comprising:forming a wet etch stop layer over a frontside of a semiconductor substrate;forming a sacrificial semiconductor layer over the wet etch stop layer;forming a dry etch stop layer over the sacrificial semiconductor layer;forming a stack of semiconductor device layers over the dry etch stop layer;performing a bonding process to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die;performing a wet etching process to remove the semiconductor substrate; andperforming a dry etching process to remove the wet etch stop layer and the sacrificial semiconductor layer.2. The method of claim 1 , wherein the semiconductor substrate is thicker than the sacrificial semiconductor layer.3. The method of claim 1 , further comprising:patterning the stack of semiconductor device layers and the dry etch stop layer to form a first semiconductor device and a second semiconductor device laterally separated from the first semiconductor device, wherein after the patterning, the first ...

LIGHT EMITTING DEVICE, OPTICAL MODULE AND MANUFACTURING METHOD THEREOF

A light emitting device, an optical module and a manufacturing method thereof are disclosed. According to an example of the disclosure, the light emitting device may comprise an optical waveguide chip, a light emitting chip and a grating between the light emitting chip and the optical waveguide chip. The light emitting chip may emit laser light. The grating may couple the laser light emitted from the active layer into the optical waveguide chip in a way that the laser light is output along a length direction of the optical waveguide chip. 1. A light emitting device , comprising:a light emitting chip configured to emit laser light;an optical waveguide chip configured to output the laser light; anda grating positioned between the light emitting chip and the optical waveguide chip, wherein the grating is configured to couple the laser light emitted from the light emitting chip into the optical waveguide chip in a way that the laser light is output along a length direction of the optical waveguide chip.2. The light emitting device of claim 1 , whereinthe light emitting chip is configured to emit laser light propagating in a direction orthogonal to the length direction of the light emitting chip; andthe grating is configured to change propagation direction of laser light in a way that the laser light emitted from the light emitting chip propagates in a direction substantially parallel to the length direction of the optical waveguide chip and injects into the optical waveguide chip.3. The light emitting device of claim 1 , wherein claim 1 ,the light emitting chip is configured to emit laser light propagating in a direction parallel to the length direction of the light emitting chip; and a first grating close to the light emitting chip, wherein the first grating is configured to change propagation direction of laser light in a way that the laser light emitted from the light emitting chip propagates in a direction substantially orthogonal to the length direction of the ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device includes an active layer, a first layer, and a surface metal film. Multiple quantum well layers are stacked in the active layer; and the active layer is configured to emit laser light of a terahertz wave by an intersubband transition. The first layer is provided on the active layer and includes a first surface in which multiple pits are provided to form a two-dimensional lattice. The surface metal film is provided on the first layer and includes multiple openings. Each of the pits is asymmetric with respect to a line parallel to a side of the lattice. The laser light passes through the multiple openings and is emitted in a direction substantially perpendicular to the active layer. 1: A semiconductor laser device , comprising:an active layer configured to emit laser light of a terahertz wave by an intersubband transition, a plurality of quantum well layers being stacked in the active layer;a first layer having a first surface and being provided on the active layer, a plurality of pits being provided in the first surface to form a two-dimensional lattice; anda surface metal film provided on the first layer, a plurality of openings being provided in the surface metal film,each of the pits being asymmetric with respect to a line parallel to a side of the lattice, andthe laser light passing through the plurality of openings and being emitted in a direction substantially perpendicular to the active layer.2: The semiconductor laser device according to claim 1 , wherein the lattice of the first layer includes the pits having configurations of prescribed regions of the first layer cut out from the first surface toward a depth direction.3: The semiconductor laser device according to claim 1 , wherein the openings form a two-dimensional lattice.4: The semiconductor laser device according to claim 2 , wherein the openings form a two-dimensional lattice.5: The semiconductor laser device according to claim 3 , wherein a pitch of the lattice of the ...

NONEQUILIBRIUM PULSED FEMTOSECOND SEMICONDUCTOR DISK LASER

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking. 2. A laser system according to claim 1 , wherein the first MQW unit is positioned asymmetrically between the first and second immediately neighboring nodes.3. A laser system according to claim 1 , further comprising a mode-lock element disposed in the optical resonator in optical communication with the laser chip and configured to define mode-locked pulses of optical radiation inside said optical resonator when said energy is pumped to the laser chip.4. A laser system according to claim 3 , wherein the mode-lock element comprises at least one of a semiconductor saturable absorber mirror element claim 3 , a self-phase modulation Kerr lens element claim 3 , and an active modulation element.5. A laser system according to claim 1 , wherein the first distance is a sub-wavelength distance that is shorter than the first wavelength claim 1 , said laser system being configured to define durations claim 1 , of said mode-locked pulses claim 1 , each of which is shorter that one hundred femtoseconds.6. A laser system according to claim 1 ,wherein two neighboring QWs from said at least three first QWs are separated from one another by first confinement barrier material, the ...

GUIDE TRANSITION DEVICE WITH DIGITAL GRATING DEFLECTORS AND METHOD

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane. 19-. (canceled)10. A guide transition device comprising:a light source designed to generate a light beam;a light input port on a first plane, the light input port being coupled to receive the light beam from the light source;a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment; andplane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane, the plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees, the plane shifting apparatus being coupled to transfer the light beam to the light output port on the second plane;wherein the plane shifting apparatus includes a first digital grating positioned on the first plane and a second digital grating positioned on the second plane, the first digital grating positioned to receive the light beam from the light input port and to deflect the light beam to the second digital grating, and the second digital grating positioned to deflect the light beam into light communication with the output port.11. The guide ...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Disclosed herein is a semiconductor device comprising: a silicon substrate; a germanium layer; and a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; at least one layer containing III-V compound quantum dots wherein one or more facets are formed using focused ion beam etching such that the angle between the plane of the facet is normal to the plane of growth. 1. A semiconductor device comprising:a silicon substrate;a germanium layer;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.2. A semiconductor device comprising:a silicon substrate;a buffer layer comprised of at least one layer of III-V compound, formed directly on silicon;one or more InGaAs/GaAs strained layer superlattices; andat least one layer containing III-V compound quantum dots,wherein one or more facets are formed using focused ion beam etching such that an angle between a plane of the facet is normal to a plane of growth.3. The device of claim 1 , wherein ions of the focused ion beam include positive ions of He claim 1 , Ne claim 1 , and Ga.4. The device of claim 1 , wherein probe current is less or equal to 500 pA.5. The device of claim 1 , wherein step size is less or equal to 100 nm.6. The device of claim 1 , wherein dwell time is less or equal to 1 ms.7. The device of claim 1 , wherein the angle between the plane of the facet and the normal in the growth plane to an axis of a waveguide forming part of the device claim 1 , which is a facet angle claim 1 , is chosen to create cavity mirrors with different angles so that a facet reflectivity can be controlled in a reproducible and high yield way to create diverse semiconductor devices on silicon.8. The device of claim 7 , wherein the facet angle is a value ...

Laser

A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0<ξ<1.