LIGHT EMITTING DEVICE AND LIGHTING SYSTEM
Embodiment relate light emitting device, light emitting element manufacturing method, light-emitting device package and relates to illumination system. (Light Emitting Device) light emitting element is converted into light energy-operates with an electric energy is of the characteristic as junction diode p-n, V family III on periodic table group of a compound semiconductor such as compound semiconductor can be generated by adjusting the a composition ration of down various colors. Light emitting device an equal frame upon application direction voltage p layer electronic layer n (electron) and a hole (hole) coupled the conduction band (Conduction band) (Valance band) to the appliance and by summing band gap energy of which dissipate energy, said energy primarily is emitted into heat or light form, surface-emission emitted light form the recording operation. is provided to apply to an element. For example, nitride semiconductor high thermal stability light by a wide band gap energy layer electronic high power device and large, in particular in the fields of interest of wet liquid to flow down. In particular, (Blue) recognizing antigens of hepatitis nitride semiconductor light emitting device, green light emitting element (Green), ultraviolet (UV) light emitting element, or the like, that has using the high compatibilized of wet liquid to flow down. Nitride semiconductor light-emitting device comprises a electrode layer according to the position (Lateral Type) type horizontal type vertical light emitting element and light emitting element to be a molding material having a thermal expansion rate (Vertical type). Horizontal type a light-emitting element of and of forming nitride semiconductor layer on sapphire substrate, upper nitride semiconductor layer two electrode layer a defined to be placed. While, the light-emitting device in prior-art antigen exposure room and of emitting light in active layer electrode layer a q light absorbing the light extraction efficiency by. reducing a leakage. Enhance the light extraction efficiency relate embodiment a light-emitting element which can, manufacturing method of the light-emitting elements, light-emitting device package and. provided illumination system. A light embodiment number 1 conductive-type semiconductor layer (132); said number 1 conductive-type semiconductor layer (132) on an active layer (134); said active layer (134) number 2 on conductive-type semiconductor layer (136); said number 1 conductive-type semiconductor layer (132) on electrode number 1 (161); said number 2 conductive-type semiconductor layer (136) on electrode number 2 (162); said number 8 880000851888 conductive-type semiconductor layer (136) (H) plurality of home on the upper surface; and said number 2 conductive-type semiconductor layer (136) device further includes a (H) plurality of home of the insulating layer (140) may include a. : An embodiment said light emitting element, and the illumination system may include a a light emitting module. Light embodiment, manufacturing method of the light-emitting elements, light-emitting device package and according to illumination system, electrode layer, light is the dye from being absorbed can be enhance the light extraction efficiency. Figure 1 shows a light assembly also number 1 embodiment. Electrophotographic assembly light Figure 2 embodiment. Number 2 embodiment also Figure 3 shows a light assembly. Number 3 embodiment also Figure 4 shows a light assembly. Also 5 to also Figure 10 shows a manufacturing method of light cross section process embodiment. Figure 11 shows a cross section also embodiment light chip in chip units. Decomposition of also Figure 12 shows a perspective view a lighting device embodiment aspect. The first deoxygenator in described embodiment, each layer (film), region, pattern or structures the substrate, each layer (film), region, pad or patterns of "(on/over) on on the upper and/or lower" or "below (under)" is formed when described as the, "on the upper and/or lower (on/over) on" and a "(under) below" the "direct (directly)" or "other layers (indirectly) via a" includes both of the invention is that the. Above or below on the upper and/or lower of each layer in addition to the described criteria based on the drawing. (In the embodiment) Also number 1 embodiment Figure 1 shows a light (100) of is cross-sectional drawing, the 2 light assembly embodiment is electrophotographic SEM. A light embodiment number 1 conductive-type semiconductor layer (132) and, said number 1 conductive-type semiconductor layer (132) on an active layer (134) and, said active layer (134) number 2 on conductive-type semiconductor layer (136) and, said number 1 conductive-type semiconductor layer (132) on electrode number 1 (161) and, said number 2 conductive-type semiconductor layer (136) on electrode number 2 (162) and, said number 2 conductive-type semiconductor layer (136) on the upper surface plurality of home (H) and said number 2 conductive-type semiconductor layer (136) device further includes a (H) plurality of home of the insulating layer (140) may include including a. According to the example embodiment, electrode number 2 (162) a overlap the rear side of the number 2 conductive-type semiconductor layer (136) (Etching) selectively etching such as the home removed by home after is formed (H) (H) insulating layer (140) capable of forming a.. Said insulating layer (140) an electrically non-conducting material may be formed from, said insulating layer (140) the SiO2 or Al2 O3 a substance such as a can be limited to not. According to the example embodiment, the current blocking layer structure than prior art flat zones exhibit substantially equal reflexivities (pit) (H) of the light guide without removing the insulating layer (140) of light extraction by irregular reflection of the number of the address. In in addition in the embodiment, said device further includes a home (H) the insulating layer (140) the number 2 electrode (162) are integrated by time and said number 2 electrode (162) a current inflow according to concentration is prevented may contribute to its current spreading the. According to the example embodiment, said insulating layer (140) and said number 2 electrode (162) on the electrode (150) further may include. said electrode (150) of the bottom can be flat (flat). According to the example embodiment, the electrode (150) at the boundary portions home capability due to flat stresses can be enhanced properties (Electrical stress). According to the example embodiment, number 2 conductive-type semiconductor layer (136) (Etching) chemically etching in mainly circumference of a region, where the defect (defect) is present is begins where, a semiconductor chip is mounted is etched between the portions with strong defect after electrical terminal stable insulating layer material (140) is filled with a low current, electrical stress (stress) of a reinforcing. they can be viewed in the through holes of the substrate. In in addition in the embodiment, the number 2 home (H) said conductive-type semiconductor layer (136) a horizontal plane of a predetermined angle (θ) by active layer (134) is formed in the discharge cells can be height the light extraction efficiency of. For example, the number 2 home (H) said conductive-type semiconductor layer (136) wherein said component comprises from about a horizontal plane of 56° angle may have the LR is limited to not. In addition in the embodiment in the home (H) and can comprise of closed or broken shapes. For example, said home (H) of a triangle formed cross section, and can be degraded and limited to not. In addition said home (H) is recessed at a first cross section, and widening the reflective body to be at -1.5 to light extraction efficiency. Light embodiment, manufacturing method of the light-emitting elements, light-emitting device package and according to illumination system, electrode layer, light is the dye from being absorbed can be enhance the light extraction efficiency. (Number 2 in the embodiment) Figure 3 shows a light number 2 embodiment also (102) of the cross-section of.. Number 2 embodiment the first deoxygenator number 1 embodiment relate technical features which may employ, a or at a centered primary characteristic lies the first deoxygenator hereinafter number 2 embodiment. Number 2 embodiment based on a received light emitting element (102) the number 2 conductive-type semiconductor layer (136) groove (H), a reflection layer disposed bottom (142) includes, said insulating layer (140) the reflective layer (142) can be disposed on. Said reflective layer (142) the Ag, Ni, Al, Rh, Pd, Ir, Ru, mg, Zn, Pt, Au, including at least one of Hf can be formed with the metal or alloy the LR is limited to not. Furthermore, said reflective layer (142) nonmetallic may include a reflective material. For example, said non-metallic reflective material the Al2 O3 such as the reflection metal oxide can be limited to not. According to the example number 2 embodiment, reflective layer disposed in the home (H) (142) by light reflection performance to a first in-first out light-extraction efficiency is can be is often further enhanced. In in the embodiment, said reflective layer (142) the number 2 electrode (162) and spaced apart insulating layer (140) current spreading by can be maintaining the functions of an. For example, said number 2 relate embodiment conductive-type semiconductor layer (136) on the electrode (150) can include a, said reflective layer (142) to metallic reflecting material to reflect when including, said electrode (150) and spaced apart insulating layer (140) current spreading by can be maintaining the functions of an. (Number 3 in the embodiment) Figure 4 shows a light number 3 embodiment also (103) of the cross-section of.. Number 1 in the embodiment number 3 embodiment relate, technical features of number 2 which may employ which, a or at a centered primary characteristic lies the first deoxygenator hereinafter number 3 embodiment. Number 3 embodiment relate, said insulating layer (140), is distributed between a reflective material (146) may include a. According to the example number 3 embodiment, distributively disposed home (H) a reflective material (146) by light reflection performance to a first in-first out light-extraction efficiency is can be is often further enhanced. In in the embodiment, said reflective material (146) the number 2 electrode (162) and spaced apart insulating layer (140) current spreading by can be maintaining the functions of an. Said reflective material in the embodiment in (146) the said electrode (150) the body unit away from a. Said reflective material (146) a metallic reflective material or non metallic may include a reflective material. Hereinafter, reference to 10 also to 5 also embodiment of light describes a manufacturing method. First, also 5 and a substrate such as (105) for preparing a. Said substrate (105) contains a water-soluble thermal conductivity may be formed from material, monohydrate insulating substrate or conductive substrate. For example, said substrate (105) a sapphire (Al2 O3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga2 03 , use can be made of, at least one of. Said substrate (105) on the uneven structure, in which may be formed, does not defined to. After, said substrate (105) number 1 on conductive-type semiconductor layer (132), active layer (134) and number 2 conductive-type semiconductor layer (136) for including P type impurity (130) capable of forming a.. Embodiment relate P type impurity (130) formed on, said substrate (105) on buffer layer (110) is can be formed. Said buffer layer (110) the P type impurity (130) material of the substrate (105) lattice mismatch of mitigating which are, buffer layer material group 3-5 group compound semiconductor e.g., GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN can be formed at least one of. Said buffer layer (110) semiconductor layer (undoped) undoped on (120 may be formed is, does not defined to. Said number 1 conductive-type semiconductor layer (132) the semiconductor compound, for example group 3-5 group, group 2-6 group of a compound semiconductor such as can be implemented, and, .can be doped type dopant conductive number 1. Said number 1 conductive-type semiconductor layer (132) is when n type semiconductor layer, said number 1 n-type dopant as a dopant conductivity type, Si, Ge, Sn, Se, may include Te not limited to the LR is. Said number 1 conductive-type semiconductor layer (132) the Inx Aly Ga1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) of the semiconductor material with its on the superconductor thin film to prevent may include a. For example, said number 1 conductive-type semiconductor layer (132) the GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP any one or more can be formed. Said number 1 embodiment relate conductive-type semiconductor layer (132) electrons onto the injection layer capable of forming a (not shown).. Said electronic implantation layerit will be a nitrification gallium layer conductivity type may number 1. For example, n-type doping elements said electronic implantation layer 6.0x1018 atoms/cm3 -8.0x1018 atoms/cm3 doped with electron injection efficiently by the first. Furthermore, embodiment on injection layer electronic relate strain control layer capable of forming a (not shown).. For example, electronic injection layer on Iny Alx Ga(1-x-y) N (0≤x≤1, 0≤y≤1)/ GaN strain, and the like can be control levels. Number 1 layer control strain said conductive-type semiconductor layer (132) and the active layer (134) lattice, and an intermediate hunt for stress can be effectively reduce the. After, said strain control layer on an active layer (134) is formed on. Said active layer (134) the number 1 conductive-type semiconductor layer (132) through an electronic injection and latter number 2 formed conductive-type semiconductor layer (136) injected through the hole is continuously active layer (light emitting layer) is determined by energy band unique material whose energies is layer emitting light. Said active layer (134) a single quantum well structure, the multiple quantum well structure (MQW: Multi Quantum Well), quantization line (Quantum-Wire) structure, or quantum dots (Quantum Dot) structure can be formed at least either. For example, said active layer (134) a tree methyl gallium gas (TMGa), ammonia gas (NH3), nitrogen gas (N2), indium gas and trimethylamine (TMIn) are implanted to the multiple quantum well structure may be formed the LR is limited to not. Said active layer (134) InGaN/GaN barrier layer /, well layers, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, AlGaAs/GaAs (InGaAs), any one or more pairs of AlGaP/GaP (InGaP) can be formed with the LR is not limited to. Said well layer band gap barrier layer said element consisting of a material which has bandgap lower than can be formed. Said number 2 conductive-type semiconductor layer (136) the semiconductor compound, for example group 3-5 group, group 2-6 group of a compound semiconductor such as can be implemented, and, .can be doped type dopant conductive number 2. For example, said number 2 conductive-type semiconductor layer (136) the Inx Aly Ga1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) of the semiconductor material with its on the superconductor thin film to prevent may include a. Said number 2 conductive-type semiconductor layer (136) is when p type semiconductor layer, said number 2 as-type dopant p a dopant conductivity type, mg, Zn, Ca, Sr, may include a such as Ba. Said number 2 conductive-type semiconductor layer (136) associated with the chamber trimethyl gallium (TMGa) gas, ammonia gas (NH3), nitrogen gas (N2), and magnesium (mg) such as including-type impurity is p [...] cyclopentadienyl magnesium (EtCp2 mg) {mg (C2 H5 C5 H4)2} are implanted to p type GaN layer of snow can be formed, the LR is limited to not. In the embodiment in said number 1 conductive-type semiconductor layer (132) the n-type semiconductor layer, said number 2 conductive-type semiconductor layer (136) the p-type semiconductor layer may be implemented the LR is not limited to. In addition said number 2 conductive-type semiconductor layer (136) on the number 2 conductivity types and having the opposite polarity to the semiconductor e.g. n-type semiconductor layer (not shown) capable of forming a.. Is according to structure (130) the n-p junction structure, p-n junction structure, n-p-n junction structure, either junction structure p-n-p can be and cut portions. Next, also 6 said number 1, such as conductive-type semiconductor layer (132), and is exposed to the outside upper side of the number 2 conductive-type semiconductor layer (136) and active layer (134) active layer (134) can be removed from. Next, said number 2, such as 7 also conductive-type semiconductor layer (136) on the upper surface plurality of home (H) capable of forming a.. Also Figure 8 shows a number 2 conductive style layer (136) to plurality of home (H) is electrophotographic-formed surface. Next, said number 2 also 9 such as a conductive-type semiconductor layer (136) device further includes a (H) plurality of home of the insulating layer (140) capable of forming a.. Said insulating layer (140) an electrically non-conducting material may be formed from, said insulating layer (140) the SiO2 or Al2 O3 a substance such as a can be limited to not. According to the example embodiment, the current blocking layer structure than prior art flat zones exhibit substantially equal reflexivities (pit) (H) of the light guide without removing the insulating layer (140) of light extraction by irregular reflection of the number of the address. According to the example embodiment, electrode number 2 (162) a overlap the rear side of the number 2 conductive-type semiconductor layer (136) (Etching) selectively etching such as the home removed by home after is formed (H) (H) insulating layer (140) capable of forming a.. In in addition in the embodiment, said device further includes a home (H) the insulating layer (140) the number 2 electrode (162) are integrated by time and said number 2 electrode (162) a current inflow according to concentration is prevented may contribute to its current spreading the. According to the example embodiment, number 2 conductive-type semiconductor layer (136) (Etching) chemically etching in mainly circumference of a region, where the defect (defect) is present is begins where, a semiconductor chip is mounted is etched between the portions with strong defect after electrical terminal stable insulating layer material (140) is filled with a low current, electrical stress (stress) of a reinforcing. they can be viewed in the through holes of the substrate. In in addition in the embodiment, the number 2 home (H) said conductive-type semiconductor layer (136) a horizontal plane of a predetermined angle (θ) by active layer (134) is formed in the discharge cells can be height the light extraction efficiency of. For example, the number 2 home (H) said conductive-type semiconductor layer (136) wherein said component comprises from about a horizontal plane of 56° angle may have the LR is limited to not. In addition in the embodiment in the home (H) and can comprise of closed or broken shapes. For example, said home (H) of a triangle formed cross section, and can be degraded and limited to not. In addition said home (H) is recessed at a first cross section, and widening the reflective body to be at -1.5 to light extraction efficiency. While, also 3 number 2 embodiment, such as based on a received light emitting element (102) the number 2 conductive-type semiconductor layer (136) groove (H), a reflection layer disposed bottom (142) and, said insulating layer (140) the reflective layer (142) can be disposed on. Said reflective layer (142) the Ag, a metallic reflective such as Al may comprise a the LR is limited to not. Said reflective layer (142) nonmetallic may include a reflective material. According to the example number 2 embodiment, reflective layer disposed in the home (H) (142) by light reflection performance to a first in-first out light-extraction efficiency is can be is often further enhanced. Furthermore, number 3 embodiment relate also 4 such as a, said insulating layer (140), is distributed between a reflective material (146) may include a. According to the example number 3 embodiment, distributively disposed home (H) a reflective material (146) by light reflection performance to a first in-first out light-extraction efficiency is can be is often further enhanced. Next, also, such as 10 said insulating layer (140) and said number 2 conductive-type semiconductor layer (136) on the electrode (150) is formed on. said electrode (150) on electrode number 2 (162), said exposed number 1 conductive-type semiconductor layer (132) on electrode number 1 (161) capable of forming a.. said electrode (150) the ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO such as transmission of light may be formed conductive material the LR is limited to not. said electrode (150) of the bottom can be flat (flat). According to the example embodiment, the electrode (150) at the boundary portions home capability due to flat stresses can be enhanced properties (Electrical stress). Light embodiment, manufacturing method of the light-emitting elements, light-emitting device package and according to illumination system, electrode layer, light is the dye from being absorbed can be enhance the light extraction efficiency. Also in the embodiment according to Figure 11 shows a light emitting devices are provided and on the other light-emitting device package (200) that describes a surface is. Light embodiment a package body portion (205) and a, said package body portion (205) a number 3 electrode layer (213) and number 4 electrode layer (214) and, said package body portion (205) is provided to said number 3 electrode layer (213) and number 4 electrode layer (214) is a light-emitting electrically connected (100) and a, said light emitting device (100) sound window provided so as to enclose a molding member (230) is included. Said package body portion (205) has and a beamlike silicon, synthetic resin material, or metallic material, may be formed with includes, said light emitting device (100) output efficiency are increased around the can be formed. Said number 3 electrode layer (213) and number 4 electrode layer (214) the which are electrically isolated from each other, said light emitting device (100) serves provides power to make. Furthermore, said number 3 electrode layer (213) and number 4 electrode layer (214) the light emitting device (100) to reflect the light emitted from the acts to increase optical efficiency can be, said light emitting device (100) heat generated in the melt in the an outer surface of the body may be loaded with which serves to fasten the. Said light emitting element (100) 1 illustrated door has a horizontal type light-emitting elements are can be applied are not limited to the LR is, vertical light emitting element can be applied. Said light emitting device (100) the package body portion (205) on said number 3 according to the electrode layer (213) or number 4 electrode layer (214) .may be built on top. Said light emitting device (100) the number 3 electrode layer (213) and/or number 4 electrode layer (214) and the wire manner, flip-chip manner or die by either bonding method may be electrically connected. In the embodiment in said light emitting device (100) is said number 3 electrode layer (213) and number 4 electrode layer (214) and wire through the electrically connecting to the RFID chip the exemplary but not limited to. Embodiment light are the array on the substrate are a plurality component package, said light-emitting device package said washing liquid are expelled in a on a predetermined path for optical element is comprised of a light guide plate, prism sheet, diffusion sheet, fluorescent sheet can be arranged. Such a light-emitting device package, substrate, optical member a backlight unit lighting unit or function which may act as, for example, the lighting system includes a backlight unit, lighting unit, indication device, lamp, may include a street. Also Figure 12 shows a decomposition of embodiment aspect is perspective view a lighting device. Also refers to surface 12, a lighting device embodiment aspect a cover (2100), light source module (2200), heat dissipating body (2400), supply of electrical power part (2600), inner case (2700), socket (2800) may include a. Furthermore, lighting device in the embodiment according to a member (2300) and a holder (2500) any one or more of may further include any. Said light source module (2200) in the embodiment according to the light emitting element or light-emitting device package may comprise an. E.g., said cover (2100) has the bulb (bulb) surface of the groove, is hollow and, portion is opened and can be arranged to. Said cover (2100) the light source module (2200) can be is optically coupled to the. For example, said cover (2100) the light source module (2200) a/V signals supplied from the diffusion, scattering or excitation can be taken away. Said cover (2100) has a optical member can be. Said cover (2100) the heat dissipating body (2400) may be coupled to the.. Said cover (2100) the heat dissipating body (2400) which engages with an engaging material may have a. Said cover (2100) of opal on the inner side of the can be coating obtained paint has. Of opal coating materials of the diffusion light may comprise an material. Said cover (2100) a surface roughness of the inner surface of said cover (2100) larger than surface roughness on the outer surface of can be formed. the light source module (2200) is sufficiently light from to completely contact with the laying eggs and. for. Said cover (2100) (glass) the production, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC). combination of the conductor. Wherein, the polycarbonate light resistance, heat resistance, strength the formula. Said cover (2100) an externally said light source module (2200) and transparent to be viewed, can be opaque. Said cover (2100) the blower (blow) using an the can be formed. Said light source module (2200) the heat dissipating body (2400) can be arranged on. Therefore, said light source module (2200) heat from the heat dissipating body (2400) is conducted to the. Said light source module (2200) the light source unit (2210), connecting plate (2230), connector (2250) may comprise an. Said member (2300) the heat dissipating body (2400) is disposed onto the top faces of, plurality light source members (2210) and connector (2250) being inserted into the guide groove (2310) has. Said guide groove (2310) the light source unit (2210) of substrates and a liquid connector (2250) is and corresponding. Said member (2300) light reflective material to the surface of the applied or can be applied to a supporting. For example, said member (2300) the surface of the white paint applied or can be applied to a supporting. Such said member (2300) the cover (2100) is reflected on the inner surface of said light source module (2200) again light returned in a direction said cover (2100) reflects direction.. Therefore, lighting device in the embodiment according to the objective compound. an efficacy of at. Said member (2300) example can be insulating layer as. Said light source module (2200) rotation apparatus for cylinder (2230) with an electrically conducting material may include a. Therefore, said heat dissipating body (2400) and said connecting plate (2230) electrical contact is made with them between the can be. Said member (2300) is configured insulating material has said connecting plate (2230) and said heat dissipating body (2400) of the NC. electrical short. Said heat dissipating body (2400) the light source module (2200) heat from said supply of electrical power part (2600). radiating heat from the received. Said holder (2500) the inner case (2700) an insulation part of the (2710) of receiving recess (2719) that of the separator layer and prevents. Therefore, said inner case (2700) of said insulation (2710) that are received on said supply of electrical power part (2600) is a hermetic. Said holder (2500) has a guide projection (2510) has. Said guide projection (2510) the supply of electrical power part (2600) of projections (2610) having a hole located through which. Said supply of electrical power part (2600) an external through a communication network and the electrical signals for treating or converting operation with regard to an said light source module (2200) provides to. Said supply of electrical power part (2600) the inner case (2700) of receiving recess (2719) which is housed to, said holder (2500) by said inner case (2700) is enclosed within the of. Said supply of electrical power part (2600) the projections (2610), guide section (2630), base (2650), extension (2670) may comprise an. Said guide section (2630) the base (2650) as to project outside from one side of vibration. Said guide section (2630) the holder (2500) can be inserted into. Said base (2650) to one side of can be components disposed. For example number of the components, provided external power supply for converting AC power into DC power are realized device DC converter, said light source module (2200) for driving the driving chip controls the, said light source module (2200) for protecting ESD (ElectroStatic discharge) protection element and the like may include does not defined for a the LR is. Said extension (2670) the base (2650) on one side, the other vibration as to project outside. Said extension (2670) the inner case (2700) in a connecting portion of the (2750) is inserted into a, the light valve layer is provided with electrical signals from external. E.g., said extension (2670) the inner case (2700) in a connecting portion of the (2750) is equal to or smaller than the width of may be provided. Said extension (2670) the "wire +" and "-wire" each one end and is electrically connected, "wire +" and "-wire" other one end the socket (2800) electrically may be connected to. Said inner case (2700) said supply of electrical power unit therein (2600) together with a may include molding portion. Solidifies liquid molding molding unit as an integral part, said supply of electrical power part (2600) is said inner case (2700) outputs a relay driving signal. fixed to the inside of the. Light embodiment, manufacturing method of the light-emitting elements, light-emitting device package and according to illumination system, electrode layer, light is the dye from being absorbed can be enhance the light extraction efficiency. Features described in the embodiment to at least one fatty acid, structure, effect aspect are involved in at least one embodiment, in the embodiment one necessarily only limited not. Furthermore, each in the embodiment is exemplified in features, structure, the effect of the field pertain in the embodiment having knowledge of other by the user for combination or even in the embodiment. embodiment is deformed. Such a combination thus the contents relating to and strain included within the scope the first deoxygenator embodiment should be interpreted to will. Thereby, the cold air flows over only restrains the described embodiment about CDK exemplary embodiment not defined thereby, the cold air flows, knowledge usual the field belonging substracte embodiment with grow the present embodiment an essential element the first deoxygenator beyond such a range that causes no with an abnormality in a variety of non-illustrated has various applications including deformation of a main body 2000. For example, each component shown to specifically exemplary embodiment a to cause same to be deformed can embodiment the recording operation.. And such distortion and application relating to differences a set in a range claimed with an included within the scope the first deoxygenator embodiment should be interpreted to will. Number 1 conductive-type semiconductor layer (132), active layer (134), number 2 conductive-type semiconductor layer (136), Number 1 electrode (161), number 2 electrode (162), home (H), insulating layer (140) The present invention relates to a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. According to an embodiment, the light emitting device comprises: a first conductive semiconductor layer (132); an active layer (134) on the first conductive semiconductor layer (132); a second conductive semiconductor layer (136) on the active layer (134); a first electrode on the first conductive semiconductor layer (132); a second electrode on the second conductive semiconductor layer (136); a plurality of grooves (H) on an upper surface of the second conductive semiconductor layer (136); and an insulation layer filling a plurality of grooves (H) on the second conductive semiconductor layer (136). COPYRIGHT KIPO 2015 Number 1 conductive-type semiconductor layer; said number 1 conductive-type semiconductor layer on an active layer; number 2 on active layer said conductive-type semiconductor layer; conductive-type semiconductor layer on said number 1 number 1 electrode; conductive-type semiconductor layer on said number 2 number 2 electrode; said number 2 conductive-type semiconductor layer on the upper surface plurality of home; and said number 2 conductive device further includes a plurality of home-type semiconductor layer an insulating layer including including light emitting element. According to Claim 1, number 2 layer minute description insulating filled with the first metal electrode and said groove overlaps and time is a light-emitting. According to Claim 1, said insulating layer and a translucent electrode on said number 2 including light emitting element. According to Claim 3, said (flat) a light-emitting element which [...] of the electrode. According to Claim 1, said number 2 conductive reflective layer disposed groove-type semiconductor layer, said reflective layer disposed on said insulating layer is a light-emitting. According to Claim 5, with the openings being spaced from one electrode and number 2 layer minute description reflective said light emitting element. According to Claim 3, said number 2 conductive reflective layer disposed groove-type semiconductor layer, said reflective layer is disposed on said insulating layer, said reflective layer the body unit away from a the electrode said light emitting device. According to one of Claim 5 to Claim 7, metallic reflecting material to reflect said reflective layer including light emitting element. According to one of Claim 5 to Claim 7, said light emitting element including reflecting material to reflect non-metallic reflective layer. According to Claim 1, said insulating layer, is distributed between further including a reflecting material to reflect light emitting element. According to Claim 10, said reflective material minute description number 2 electrode, facing away from light emitting element. According to Claim 3, , is distributed between said insulating layer further comprises a reflective material, said reflective material the body unit away from a the electrode the light emitting device. Number 1 number 10 and anti number 7 to anti anti to number 12 anti one of light-emitting element described in claim including illumination system as a section between the upper unit.
