CMOS HUMIDITY SENSOR AND MANUFACTURING METHOD THEREOF

The present invention a description for the structural functional description the mike and the exemplary embodiment, described and a body that range rights of the present invention and/or at least two different embodiment is interpreted to limited is not. I.e., capable of enabling user to change various relate embodiment variety of forms and may have range rights of the present invention since a technical idea can be realized including includes an equalization should understood. Furthermore, a particular or effect object presented in the present invention embodiment, must comprise a all same substracte contains only such derivatives wirelessly delivers a Bluetooth device access request specified that the meaning is not, by a backing layer, which is range rights of the present invention the timing controller is connected to the is understood will is not.

While, the present application are described within the meaning of a term to be understood as follows..

"Number 1", "number 2" components of one a set of terms, such as distinguished from other components for, rights by these terms is not is having a limited range. For example, number 1 number 2 component can be designated components, similarly number 2 number 1 component elements can be designated.

Term "and/or" of one or more related items including all possible to indicate from combination should understood. For example, "number 1 item, item number 3 and/or item number 2" meaning of a number 1, number 2 or number 3 as well as item number 1, number 2 or number 3 items may be presented from one or more 2 all. combination of items.

To other components is any component "is connected" when-mentioned that, that different structural elements thereof may be connected directly to but, intermediate the other components may be present that. to be understood. While, to other components is any component "is directly connected with the" when-mentioned that intermediate the other components there is no will should be understood. On the other hand, components and explain the relationship between other representations, i.e. "-between the" and a "mark-between the" or "-neighboring a" and "neighboring directly to-" should that count is interpreted as half formed thereon a plurality of holes for such as.

Contextually representation a plurality of differently it is apparent that without the plurality of representation carelessly including understood the new device must be powered on, "comprising" or "having." characterized it became opinion a a set of terms, such as, number, step, operation, components, discrete parts or a combination of these is present specifies which has a molar, another aspect of one or more the IBM-PC host system, step, operation, components, or a combination of these discrete parts existence of a without excluding the possibility or additionally pre should understood.

In each step identified code (for example, a, b, such as c) used for facilitating the of a identified as order of the each step not described, each contextually steps described a particular order, it is apparent that an ideal not differ from the order of the specified can be occurs. I.e., each the specified steps may occur the same as the order in which are performed substantially in parallel, and may be in the reverse order may be performed as.

Other terms are all to the is not defined, by person with skill in the art in the present invention is generally equivalent to those that would have been understood. have the meanings. Generally are defined as the dictionary used for terms of contextually art associated semantics and having must be interpreted to match, the present application, become manifest in a do not define the formal excessively or is ideal for with and cannot interpreted to.

: An of the present invention number 1 embodiment also Figure 1 shows a CMOS is is placed and a side surface extending described humidity sensor.

Also with a 1, humidity sensor (100) the semiconductor substrate (110), insulating film (120), lower electrode (130), connected via (connecting via, 140), number 1 and number 2 electrodes (150,160), barrier (170), [...] (180) and passivation film (190) includes. Wherein, insulating film (120) the number 1 insulating film (121) and number 2 insulating film (122) may be separated into.. In the present invention number 1 and number 2 electrodes (150,160) [...] contact and a top portion of the (180) is formed integrally with the screw and based, without limited to, moisture sensing capability for recorded number 2 to insulating film (122) extends is number 1 and number 2 electrodes (150,160) is configured in such a way that a [...] (180) the system may be implemented in a..

Semiconductor substrate (110) a moisture sensor (100) provided to integrate a substrate as the basis for (for example, silicon substrate) can be formed. Semiconductor substrate (110) number 1 on the insulating film (121) and the lower electrode (130) can be formed is.

Insulating film (120) the number 1 insulating film (121) and number 2 insulating film (122) which can be decomposed into, number 1 insulating film (121) a semiconductor substrate (110), which is placed on a, number 2 insulating film (122) upper part of the number 1 and number 2 electrodes (150,160) is arranged. In one in the embodiment, connected via (140) the lower electrode (130) and number 2 electrode (160) is connected between the lower electrode is to take on the role of an electrode number 2 to assist can be.

For example, connected via (140) is lower electrode (130) and number 2 electrode (160) when connecting, number 2 electrode (160) area of prescribed effects is widened and, humidity gear ratio greater. capable of generating a capacitance. Thereby, CMOS humidity sensor (100) can be the a predetermined.

Number 1 and number 2 electrodes (150,160) [...] is arranged apart from each other (180) according to moisture absorbing property, quick provides capacitance. More particularly, number 1 and number 2 electrodes (150,160) the [...] (180) from being absorbed by the moisture content according to the change is changed capacitance have each capacitance of an electrostatic and a difference detect the may provide a relative humidity.

Furthermore, number 2 electrode (160) via a connection (140) through the lower electrode (130) electrically may be connected to. Number 2 electrode (160) connected via (140) and the lower electrode (130) is electrically interconnected one large number 3 electrode (130,140,160). capable of forming a. Therefore, humidity sensor of the present invention (100) the number 1 electrode (150) and one large number 3 electrode (130,140,160) between a sensor detecting a change in capacitance of a may be embodied in. Thereby, capacitance of the existing method in the increased area of the upper surfaces of the one flat electrode arrangement of comb-type can be increase the capability of the sensing than.

Barrier (170) the number 1 and number 2 electrodes (150,160) on top number 1 and number 2 electrodes (150,160) is formed along the pattern of. Barrier (170) the number 1 and number 2 electrodes (150,160) substance is moisture or moisture corrosion or prevent the surface oxidation by carrying out can be. Barrier (170) is number 1 and number 2 electrodes (150,160) coating if this is not the case, number 1 and number 2 electrodes (150,160) corrosive or oxidation and tolerance can be induced modified by, number 1 and number 2 electrodes (150,160) made by modification caused the normally humidity is the rotary. Wherein, barrier (170) an oxide (oxide), nitride (nitride) cargo or nitric acid may be formed as series (oxynitride).

[...] (180) the barrier (170) is placed at the upper part of external from air moisture sensor capable of adsorbing moisture consists of material. Moisture provided to improve retention characteristics of a, absorbed by moisture of moisture are whose dielectric constant changes with, number 1 and number 2 electrodes (150,160) can be electrostatic dosage variability. Furthermore, [...] (180) can impart a the capacitance sensitivity of the humidity sensor (100) measured by may carried out with relative humidity.

For example, [...] (180) [...] constituting the polymer (polymer), polyimide (polymide) or porous ceramic can be formed. Such moisture relative humidity when exposed to the air material according to or of adsorbing moisture and capable of releasing a, humidity sensor (100) moisture sensor change humidity detected in moisture of material? Flow which varies in accordance with the by measuring the dielectric constant may be embodied in.

Protective film (190) the [...] (180) [...] is deposited on (180) from exterior environments. I.e., protective film (190) the [...] (180), are connected to the hot or humidity severe environments, such as, may be generated when subjected to a [...] (180) of the objective compound. or preventing delay degeneration. Protective film (190) the [...] (180) is deposited on [...] by (180) the outer air (air) is directly exposed to the can be to prevent. Protective film (190) openings which allow through passage of moisture, a material is, the presence of pores (pore) use mainly porous material. Porous material, and a protective film (190) the resonator includes a capacitor, an outside through the through the pores moisture [...] (180) can be be reached in. Wherein, the porous material is an polymer (polymer) material, inorganic film, use can be made of, for aerogel oxide layer. These materials well coating [...] should a material capable of. Thus are? Without developing materials that may be adhere well. are suitably employed as the three-.

Wherein, [...] (180) of outdoor air in the moisture of the dextrin must be sensing, protective film (190) [...][...] of (180) of can be smaller than the first one, so [...]. Protective film are used to irradiate (polymer material) when adsorbed moisture too much in considering the air consumption upon counting the [...] is thus decreased.

In Figure 1, protective film (190) the number 1 and number 2 electrodes (150,160) is placed on top of. The protective film (190) is number 1 and number 2 electrodes (150,160) when down to bottom, protective film (190), which maintains a constant sensitivity of can't. Furthermore, protective film (190) constituting the polymeric material vapor deposition or spin coating a cathode containing an active material capable may be embodied in. Therefore, protective film (190) suitable according to the range of 2-3.5 and the dielectric constant, [...] (180) suitable 3-4 the dielectric constant can be according to the range of value.

In one in the embodiment, protective film (190) [...] the thickness of the (180) less than thickness of can be formed. Protective film (190) [...] thickness of (180) larger than thickness of the required, protective film (190) is [...] (180) absorbs the moisture more material than would can be, protective film (190) [...] the thickness of the (180) than the thickness of a phosphor layer is formed within it is preferable that the.

: An of the present invention number 2 embodiment also Figure 2 shows a CMOS is is placed and a side surface extending described humidity sensor.

In Figure 2, CMOS humidity sensor (200) the [...] (180) chamber, in which (190) that are formed between the buffer layer (buffer layer, 210) further includes a. Buffer layer (210) the [...] (180) chamber, in which (190) a barrier layer between the bottom electrode is installed under the second, [...] (180) chamber, in which (190) of the adhesion force between the objective compound. (adhesion force). Wherein buffer layer (210), and an overcoat layer, in other words a of polymer material (Over Coating Layer) can be layers are employed. OVO coating layer may be moisture as well as pass through the well, . belonging to material and having high water light transmission.

In one in the embodiment, buffer layer (210) using the protection layer as an (190) through a first opening, buffer layer (210) can be formed alone only. In this case, buffer layer (210) can provide a protective film having a (190) to take on the role of an the [...] (180) can be provided to prevent the.

: An of the present invention number 3 embodiment also Figure 3 shows a CMOS is is placed and a side surface extending described humidity sensor.

Also refers to surface 3, humidity sensor (300) a plurality of [...] (311, 312, 313, 314, 315) alternately (or [...] ) [...] formed is disposed in a parallel (310) includes. Wherein a plurality of [...] (311, 312, 313, 314, 315) has a other moisture can take the characteristics. In one in the embodiment, plurality of [...] (310) when are alternately arranged on the, moisture [...] number 1 low sensitivity (311, 313, 315) group and number 2 [...] the sensitivity is high (312,314) can be alternately group. Low sensitivity [...] number 1 (311, 313, 315) [...] high sensitivity group number 2 (312,314) [...] number 2 by group is protected (312,314) can be provided to prevent the group. I.e., sensitivity is number 1 [...] (311, 313, 315), and a protective film shown in 1 a group (190) and can be play the same role as a.

Wherein [...] number 1 (311, 313, 315) [...] the thickness of the group number 2 (312,314) group of thickness can be smaller than the first one, so. Therefore, plurality of [...] (310), absorption of moisture/prestretch and the unit to perform a and request multiple [...] (310) of [...] purpose: an instrument for an endoscope. Plurality of [...] (310) of as and when said, plurality of [...] (310) an external structure of a material to denature the material moisture even if exposed to extreme environments possible to prevent that a, plural [...] (310) the [...] (180) chamber, in which (190) to replace one or the.

Furthermore, and are not configured in single [...], plurality of [...] (310) formed humidity sensor (300) the temperature/humidity (85 °C/85%, 1008h)-external environment in a material which is strong against the coating on the material and a moisture and the high temperature/humidity moisture of combination of polyimide to penetrate and [...] to disconnect or other reacted with an amino-containing material minimizing modified eliciting an penetration hole while moving up and down.

: An of the present invention number 4 embodiment also Figure 4 shows a CMOS is is placed and a side surface extending described humidity sensor.

Also 4 with a, CMOS humidity sensor (400) has an inorganic-(inorganic material) [...] of (180) chamber, in which (190) can be formed. Wherein, [...] (180) chamber, in which (190) is deposited the CVD or sputtering method is formed by an inorganic insulating material can be. In this case, [...] (180) and passivation film (190) the number 1 and number 2 electrode surface (150,160) along the conformal (conformal) formed through the deposition process on contact with an external environment CMOS humidity sensor (400) reduces bending and on the surface of can be formed. Therefore, [...] (180) chamber, in which (190) an external exposed to an environment surface area is formed, [...] (180) chamber, in which (190) from the external environment and for absorption of moisture more CMOS humidity sensor (400) can be of enhancing the accuracy of. [...] (180) chamber, in which (190) is formed when made of moisture, if so, the such bending effect is implemented, [...] (180) chamber, in which (190) to generate effect flexing of may be formed as material novel polyester pellets.

Figure 5 shows a CMOS in accordance with one embodiment of the present invention also on a silicon substrate humidity sensor to extra CMOS sensor element is the surfaces of the laminated structure in described.

CMOS reticle also Figure 5 shows a humidity sensor as well as a peripheral circuit region to a semiconductor substrate and CMOS humidity sensor device (CMOS sensor IC, 500) is up of a number of. I.e., humidity sensor including CMOS humidity sensor chip (500) the following formula 1.. CMOS humidity sensor chip (500) a moisture sensor region (10) and peripheral circuit region (20) may be divided into.. Humidity sensor area (10) the CMOS humidity sensor (100) includes a capacitance along a capacitive air humidity is achieved by (capacitance) is region it as an input power. Humidity sensor area (10) the [...] (180) the number 1 and number 2 electrode (150,160) and to cover the between and its peripherals can be formed.

Wherein [...] (180,530b) and passivation film (190,530c) a peripheral circuit region (20) of and upward to of passivation film (passivation layer, 530a) can be formed is to extend the. This a to an external environment feeling moisture content increase the moisture, the CMOS humidity sensor (100) can be to improve the accuracy of. Wherein passivation film (530a) the final upper metal wiring layer (520c) as a film formed over the, metal wiring (520c, 520b, 520a) to serve for protecting, silicon oxide film or the silicon nitride layer or a oxide membrane/nitride can be constructed. And upper metal wiring layer (520c) the number 1 electrode (150) and number 2 electrode (160) is formed in the steps same formed on. Upper metal wiring layer (520c) the external terminal and the connection and the..

Humidity sensor area (10) to CMOS humidity sensor (100) as well as reference capacitor (510) and a feedback capacitor (not shown) is formed. Wherein CMOS humidity sensor (100) for the sensing capacitance value (Cs) CMOS humidity sensor chip (500) and reference capacitor (510) generates a reference capacitance value (Cr) for CMOS humidity sensor chip (500) provides. Reference capacitor (510) the CMOS humidity sensor (100) [...] used in (180) of a material different from the a dielectric material is placed on a film is used and the. Reference capacitor (150) and feedback capacitor form the second type use an MIM. The sensing capacitance value (Cs) [...] (180) according to humidity changes a sensing by the values of the but is changed, the humidity reference capacitance value (Cr) preserves the value supplies a bias voltage to the light source by applying an AC is a CMOS humidity sensor chip (500) the web site may provide.

Wherein, the outer a commercial humidity range reference capacitance value (Cr) preserves the value delay time information corresponding to the external order [...] moisture and resonator includes a capacitor, an inductor (180) moisture absorbing property, quick reference capacitor (510) not sorbed configured to, a, reference capacitor (510) the CMOS humidity sensor (100) and the other it is preferable that the formed insulating layer. CMOS humidity sensor (100) and a reference capacitor (510) when placed in an layer such as is, the moisture in the air reference capacitor (510) as reference radiation and absorbed capacitance. this is because the conversion. In one in the embodiment, reference capacitor (510) the CMOS humidity sensor (100) is formed a reference plane can be according to driving of the first liquid.

In one in the embodiment, feedback capacitor (not shown) the reference capacitor (510) such as a CMOS humidity sensor (100) and a is on the color filter layer so different, said CMOS humidity sensor (100) of, and the substrate, and can be formed on a lower portion of. Chip in the present invention efficiently to reduce the size of CMOS humidity sensor (100) reference capacitor below the area (510) is arranged corresponding advertisement based on the shown list, thereby CMOS humidity sensor chip (500) the size of compact may be embodied in. Or other temporarily to exemplify, reference capacitor (510) and a feedback capacitor (not shown) has humidity sensor area (10) non-, peripheral circuit region (20) may be loaded with disposed. A moisture sorbing is to be spread apart from each away region and by for placement, the change of the reference capacitor humidity. for it does not react.

Peripheral circuit region (20) a moisture sensor region (10) which processes the signal detection of humidity a signal corresponding to control circuit for outputting a and method of and serves to direct. Peripheral circuit region (20) the CMOS humidity sensor (100) received from a humidity and system for monitoring control unit (control unit, not shown) and the control unit may include results analyzed by output unit for showing may include a (not shown). Peripheral circuit region (20) the CMOS circuit (Read-Out Integrated Circuit). section in the editing non signal section. Metal wiring (520a, 520b, 520c) the control unit or output unit with is flat metal wire in. Said connected external terminal and the metal line output signal is to. In addition metal wiring (520a, 520b, 520c) a peripheral circuit region (20) communicating with the external control unit of input output signal connected wire setup signal to external device (not shown) and a may be connected to.

5 also also Figure 6 shows a making method of a CMOS humidity sensor describing order.

CMOS humidity sensor chip (500) the method for producing CMOS circuit (Read-Out Integrated Circuit) portion and after portion that are separately fabricated are humidity sensor (package process) packaging process corresponding to that of the wires over the connection to one chip is connected to the semiconductor layer. method for producing. Or CMOS silicon substrate humidity sensor circuit and implementing the following steps all at once (Si substrate) a line is connected to the semiconductor layer. method. In Figure 5 the illustrated CMOS humidity sensor chip (500) the CMOS sensor circuitry and humidity sensor one silicon substrate are in the form of aqueous being implemented in.

Also 6a reference to an surface, CMOS humidity sensor chip (500) a percent defective of a substrate by CMOS sensor element and circuit is formed (CMOS process) humidity sensor are the same on a silicon wafer (Humidity sensor process) is formed on. Furthermore, humidity sensor the same is formed on a silicon wafer [...][...] and deposition of an a coating to the source electrode and the drain (Robust protective layer coating). The passivation film is patterned external circuit and the drain electrode of the thin film patterned (Protective layer patterning) can be connected to form a bump to (Bump process). Wafer after backgrinding (Wafer back-grinding) and wafer sawing (Wafer sawing) sawing process are performed in one process chamber (Packaging process) each chip is the.

Also 6b reference to an surface, CMOS process, Humidity sensor process, Bump process, Wafer back-grinding, Packaging process and Wafer sawing process is performed, and a protection layer is evaporated the process. At this time, packaged connecting terminal are overlapped is not deposited, and the postfiltering must be patterned to..

Wherein, during or atmospheric sensor chip humidity CMOS from air a control unit controls the or water mixes a broadcast is made of a material humidity sensor, humidity sensor supplied from humidity and system for monitoring control unit (control unit) humidity control unit and an output unit generates data deciding whether a specific signal may include a.

A refiner also also Figure 7 shows a 5 to 1, and a protective film disposed sensor that describes a the effect by a is C-H curve.

CMOS humidity sensor (100) (capacitance vs relative humidity) the C-H curve most the properties of are important, these properties are initially after after the capacitance type humidity sensor (100) a certain exposed to a harsh environment should is maintained even. However, also as shown in 7 and the high temperature/high-temperature high-humidity environment (85C/85%, 1008h) upon exposure to moisture sensor layer and on the other side by humidity and degradation leads to a deformation of the material is absorbed large amount of moisture humidity sensor significantly increasing capacitance (parallel shift or greater 0.1dB in humidity) is. Furthermore, protective layer humidity sensor initial characteristics of humidity sensor to apply a vacuum to the vacuum or to such extent that it is of increasing bonding pads is improved. it will be. The protective layer, which is by protecting the [...] from exterior environments [...] the sensing unit senses the initial characteristics is maintained meaning that it, CMOS humidity sensor (100) for securing liability of of of element technology is to print images.

CMOS humidity sensor (100) a hot, humidity or with high pressure such as severe exposed to an external environment of electrostatic capacity and even for a regular correlation between relative humidity and are to be held in the can be supply a reliable driving.

Protective film (190) including a non-humidity sensor (100) in the case of, and the high temperature/high-temperature high-humidity environment, when being exposed others to find is and degradation leads to a deformation of the material moisture. The desorption process to insert the steering wheel therein adsorbed moisture free from easily, more material than would ambient conditions is the absorbent moisture. Thus large electrostatic capacitance can be increased. Therefore, protective film (190) that does not include a moisture sensor (100) has a harsh exposed to an external environment of state generates a difference characteristics and moisture and operation reliability cannot be secured in..

Also shown in 1 and 2, and a protective film (190) is deposited humidity sensor (100) and 3 as shown in, [...] high sensitivity (312,314) group and [...] low sensitivity (311, 313, 315) group when humidity senser between the of alternating light, and the high temperature/humidity exposed to an environment even protective film (190) or [...] low sensitivity (311, 313, 315) by a group [...] (180,310) of moisture from the door to the is any abraded material will not cause a frame. Therefore, protective film (190) including humidity sensor (100) has a harsh initial moisture even if exposed to an external environment by maintaining properties required of an IZO sputtering, . which reliability can be ensured.

A preferred application the present not to standardize the embodiment described but reference to thereby, the cold air flows, corresponding art patent the following is claimed is a classic mirror server one skilled in the art is a lead away from region concept and of the device within such a range that causes no the present application and change modified various can be 2000 database for each consumer.