CHIP RESISTOR ELEMENT AND CHIP RESISTOR ELEMENT ASSEMBLY
The present invention refers to chip resistance element and chip resistance element assembly are disclosed. Chip resistance element for implementing chip as a component precision resistance, electrical current in electronic circuit for regulating, in voltage drop could be bonded each other. Recent miniaturization and the walls to prevent electronic processes, an electronic device a negative trend toward miniaturized electronic circuit employed which, etc. a negative trend toward miniaturized chip resistance element. The current of the miniaturized chip resistance element without intending to be limited, to prevent high performance electronic chip resistance element etc. applied AC rather increased. Thus, miniaturization of the chip resistance element gradually improve performance data in a database for studies of heat are disclosed. One embodiment of the present invention aim of the form, even miniaturized heating performance chip number [...] magnetoresistive device and the assembly 30 to 60 seconds. One embodiment of the present invention opposing each other in the number 1 and number 2 forms the face of the insulating substrate; a resistive layer placed on a face said number 1; the amount of said number 1 to number 1 and number 2 terminal end disposed on the insulated substrate connected to said resistance layer; and said number 1 and number 3 terminal disposed on said resistive layer between said number 2 and number 3 terminals further comprises a protective layer resistance, said resistance the protective layer, said protective layer contact resistance layer number 1 resistance, 1 W/mK thermal conductivity covers at least said number 1 resistance protective layer made of a material consisting number 2 resistance protective layer, protective layer including protective layer covering said number 2 and number 3 characterized resistance resistance resistance element chip number [...] substrate. In one example, said number 1 and number 2 the pairs, said resistive layer which is arranged on the number 1 and number 2 inner electrode; and said number 1 and number 2 number 1 and number 2 can be insulation surface corresponding internal electrode. In one example, the inner electrode overlapping said number 1 and number 2 may have said number 2 resistance the protection area. In one example, said number 1 resistance protective layer can be glass material. In one example, said number 2 Al resistance the protection layer2 O3 , AlN, BN, SiO2 At least one of the polymer can be mixed material. In one example, the thickness of said protective layer has a total thickness of 5 to 30% said number 2 and number 3 resistance insulating substrate implementation being. In one example, said number 2 said number 1 and number 3 thermal conductivity than the thermal conductivity of the protective resistance resistance protective layer thereof can reach. In one example, said number 3 resistance protection layer strength thereof can reach said number 2 resistance than the protection layer. One embodiment of the present invention form a plurality of electrode pads having printed circuit board; and said plurality of electrode pads electrically connected to said printed circuit board is disposed on the chip resistance element; wherein, said chip resistance element, number 1 and number 2 surface and opposing each other in the face of the insulating substrate, the resistance layer said number 1 arranged on the opposite side, said number 1 the amount of the number 1 and number 2 at the end of the resistance layer disposed on the insulated substrate connected to said terminal, said number 1 and number 3 terminal between said number 2 and number 3 further comprises a protective layer disposed on said resistive layer terminals so as resistance, said resistance the protective layer, said protective layer resistance contact resistance layer number 1, number 2 resistance protective layer made of a material consisting at least 1 W/mK thermal conductivity resistance protective layer covers said number 1, protective layer including protective layer covering said number 2 and number 3 resistance resistance characterized number chip resistance component assembly [...] substrate. One embodiment of the present invention form the, heating performance can be improved chip resistance element and chip resistance component assembly [...] number. The lower holes are formed on the content of the present invention while using effective and not limited to, specific embodiment of the present invention account may be easily understand than in form are disclosed. According to one embodiment of the present invention Figure 1 shows a form representing the resistance sensors mounted thereon also are disclosed. Figure 2 shows a plane in the direction shown in chip resistance element I 1 also watching also are disclosed. Figure 3 shows a chip resistance elements 1 are also shown in II a-II ' cut along the contours are disclosed. Figure 4 shows a C portion of the field of view of Figure 3 also are disclosed. According to one embodiment of the present invention also form Figure 5 shows a chip resistor mounted sensors mounted thereon representing semi-chip resistance component assembly are disclosed. Figure 6 shows a III a-III also 5 also shown in chip resistance component assembly of ' cut along the contours are disclosed. Hereinafter, a preferred embodiment of the present invention with reference to the attached drawing shapes described substrate. However, various other forms of the present invention embodiment can be shape, embodiment of the present invention hereinafter described form and not the limited range. In addition, the present invention in the field of the present invention embodiment form are advantageously easier to average knowledge with which to more completely account for the ball number are disclosed. In addition to drawing elements for and apparatus or the like shapes and sizes can be described more specifically. Figure 1 shows a perspective view according to one embodiment of the present invention representing resistance element and also form, Figure 2 is a plane view looking in the direction I shown in chip resistance element also 1, also shown in Figure 3 1 chip resistance elements II a-II ' cut along the contours are disclosed. The reference also 1 and 3 also, according to one embodiment of the present invention in the form of chip resistance element (100) includes an insulating substrate (110), resistance layer (120), resistance protective layer (130) and number 1 and number 2 terminal (140, 150) can be a. Said insulating substrate (110) may have a number 1 and number 2 (A, B) opposing the, number 1 (A) the resistance layer (120) can be disposed. Said insulating substrate (110) a thin plate of a predetermined thickness (Th1) can be formed. Said insulating substrate (110) is relatively thin resistive layer (120) carries a resistance element (100) can be ensured the strength of the material that can be made. Said insulating substrate (110) excellent thermoelectric overlay can be made. Said insulating substrate (110) in use resistive layer (120) capable of effectively released outside the heat generated. E.g., said insulating substrate (110) alumina (Al2 O3 ) It will be a record be such as ceramic or polymer. In a particular example, said insulating substrate (110) surface of thin platy aluminum anodizing (anodizing) be a alumina substrate obtained by processing. Said resistance layer (120) is said insulating substrate (110) of the number 1 (A) can be disposed. The embodiment form the resistance layer (120) an insulating substrate (110) disposed number 2 (B) of the disapproval. Said resistance layer (120) is number 1 and number 2 terminal spaced apart (140, 150) of electrically between resistance elements can be used. Said resistance layer (120) or plural non metal or alloy, oxide compounds such as can be used. For example, Cu a-Ni based alloy, Ni-a Cr based alloy, Ru oxide, Si oxide, Mn and Mn-based alloy comprising at least one can. Said resistance layer (120) is said insulating substrate (110) or on the surface of said metal or alloy, oxide compounds such as screen-printing method such as through mixed paste at prescribed temperatures for prescribed by a layer thickness can be applied. Said resistance layer (120) can be determined resistance value by trimming (trimming). Trimming means by which said resistance layer (120) is formed so as to generate a target to resistance value, said resistance layer (120) industry has partially number age process. Trimming (cutting) but is the fine cutting method used, the YAG laser (laser) in one form embodiment using resistance layer (120) number region of laser trimming industry can be applied. As shown in fig. 3, said number 1 and number 2 terminal (140, 150) includes said insulating substrate (110) is disposed at both ends of said resistance layer (120) can be connected on both sides of. Said number 1 and number 2 terminal (140, 150) each said resistive layer (120) number 1 and number 2 disposed on inner electrode (141, 151) and, said number 1 and number 2 inner electrode (141, 151) number 1 and number 2 covering respectively of external electrodes (142, 152) can be comprising. the number 1 and number 2 embodiment form the inner electrode (141, 151) and said number 1 and number 2 external electrode (142, 152) each disapproval consists of multiple layers. Said number 1 and number 2 inner electrode (141, 151) has a sheet printing process using (after printing plastic) can be formed using or deposition processes. Said number 1 and number 2 inner electrode (141, 151) is number 1 and number 2 external electrode (142, 152) for seed (seed) can act as a plating process. For example, number 1 and number 2 inner electrode (141, 151) silver (Ag), copper (Cu), nickel (Ni), platinum (Pt) can be at least one. The number is one but not limited to, said number 1 and number 2 external electrode (142, 152) can be formed by plating. Said number 1 and number 2 external electrode (142, 152) nickel (Ni), tin (Sn), lead (Pd), chromium (Cr) can be at least one. For example, said number 1 and number 2 external electrode (142, 152) Ni Sn plating layer may have the agitator is installed double layer. The inner electrodes are on the copper plating layer on the Ni component (e.g., Ag) component can prevent solder leaching (leaching), Sn plating layer on the on the copper solder component hereinafter for bonding to 1308. ball number. Said resistance layer (120) surface of said resistance layer (120) prevent to protect it against external impulse to prevent resistance protective layer (130) can be disposed. Said resistance protective layer (130) number 1 and number 2 the inner electrode (141, 151) after arranging, a resistance layer of paste material exposed (120) and [phu ring [thing with the screen to cover the surface of the applied method, drying can be formed. This resistance protective layer (140) is can be consists of multiple layers. Specifically, said resistance protective layer (140) is number 1 to number 3 resistance protective layer (131, 132, 133) can be comprising. As shown in fig. 3, said number 1 resistance protective layer (131) is said resistance layer (120) can be arranged to cover directly. Said number 1 resistance protective layer (131) including a glass (glass) can be made. The, number 1 resistance protective layer (131) resistance layer (120) in a process laser trimming, resistance layer (120) which has been modified by the laser write can be prevented effectively. Said number 1 resistance protective layer (131) is applied by a method such as screen printing certain calcined at temperatures can be formed. Also as shown in 2 and 3 also, said number 2 resistance protective layer (132) is said number 1 resistance protective layer (131) can be cover. Said number 2 resistance protective layer (132) can be made of materials having the high thermal conductivity of 1 W/mk. Said number 2 resistance protective layer (132) polymer (polymer) to Al2 O3 , AlN, BN, SiO2 Such as or the circuit comprising mixing can be. In addition, number 2 resistance protective layer (132) carry the number 2 resistance protective layer (133) higher heat conductivity can be consisting of a material. As shown in fig. 4, said number 2 resistance protective layer (132) said number 1 and number 2 the inner electrode (141, 151) having a region (D) can be arranged in direct contact with. The, resistance layer (120) current is applied to heat said number 1 and number 2 terminal (140, 150) can be up and down to radiate through. Said number 3 resistance protective layer (133) is said number 2 resistance protective layer (132) can be cover. Said number 3 resistance protective layer (133) is said number 2 resistance protective layer (132) formed polymer similar to but, not limited are not correct. Said number 2 resistance protective layer (132) in order to improve the thermal conductivity, thermal conductivity in the polymer mixing, rotary surface strength may cause a decrease in disclosed. Said number 3 resistance protective layer (133) made of polymer, including thermal conductivity material number 2 resistance protective layer (132) to the input may have high surface strength and acid resistant. The, resistance layer (120) and number 2 resistance protective layer (132) outside can be protected from shock. In addition, number 1 and number 2 external electrode (142, 152) sealed in the novel bacterial strains useful resistance layer from forming plating process (120) and number 2 resistance protective layer (132) connected to the front plate can be prevent. The reference also 3 and 4 also, said number 2 and number 3 resistance protective layer (132, 133) (Th2) has a total thickness of insulating substrate (110) has a thickness of 5 to 30% of the thickness of (Th1) can be. Number 2 and number 3 resistance protective layer (132, 133) a total thickness of the insulating substrate (Th2) (110) (Th1) thickness of less than 5% of cases where the resistive layer (120) in the heat-sink heat and a heat capacity sufficient to secure the performance is not viewed, number 2 and number 3 resistance protective layer (132, 133) a total thickness of the insulating substrate (Th2) (110) (Th1) is exceeded 30% of the thickness of the protective layer (130) so as to thickness of excessively thick, chip resistance element when mounted to a circuit board, a defect occurrence been irradiated arranged elastic chip resistance. The below table 1, the magnetoresistive element by a die chip embodiment, omit the chip size comparison group electric power number 2 resistance protective layer along each example comparison experiments among others. When the same chip resistance element size, the embodiment in the form of electric power this comparison group exhausting powder coated over the power that can be confirmed. Figure 5 shows a form of the present invention according to one embodiment also mounted chip resistor having the chip resistance component assembly perspective view representing and, also shown in chip resistance component assembly of Figure 6 5 III a-III ' cut along the contours are disclosed. 5 and 6 may also reference surface, the embodiment form according to chip resistance component assembly (1000) is, 1 also shown in chip resistance element (100) on said chip resistance element (100) mounted circuit board (10) comprises. Said circuit board (10) to the element mounting region number 1 and number 2 electrode pad (11, 12) having a predetermined wavelength. Said number 1 and number 2 electrode pad (11, 12) is said circuit board (10) is embodied on the circuit pattern connected to the element mounting for ball number which land patterns saying the other. 5 also shown in chip resistance element (100) is, also 1 to 3 also shown in chip resistance element (100) can be understood to similar to a. In addition, the embodiment form of construction element particularly opposite description free a, also 1 to 3 also shown in chip resistance element (100) of the same or similar reference to understand the description is given of a component can be. As shown in fig. 6, said chip resistance element (100) includes an insulating substrate (110), said insulated plate disposed between the resistive layer (120), said resistive layer (120) protective layer covering the resistance (130), said resistive layer (120) in order number 1 and number 2 on terminal (140, 150) can be a. Circuit board (10) electronic circuit is formed a part, integrated circuit (IC) for particular operating to number of electronic [...] separating press working and the like where the current can flow disclosed. In this case, circuit board (10) comprising various wiring lines or other types of semiconductor devices such as transistor can be further. In addition, circuit board (10) is or includes a conductive layer, such as dielectric layer including various can be configured as needed. Number 1 and number 2 electrode pad (11, 12) the circuit substrate (10) disposed apart from one another on that, resistance elements in a number 1 and number 2 terminal (140, 150) of each of the solder (14) can be connected via a. The embodiment form, resistance layer (120) protective layer resistance heat of number 2 (132) number 1 and number 2 through terminal (140, 150) are radiating, chip resistance for electric power can be improved and equal to or less. Chip resistance component assembly (1000) is number 1 and number 2 electrode pad (11, 12) through, number 1 and number 2 terminal (140, 150) is electrically connected to the electric circuit by, number 1 and number 2 terminal (140, 150) of low resistance between the layer (120) can be connected to the circuit. Detailed above of the present invention embodiment of the present invention provides interface between the scope of the invention is supported by but not limited to, the claims of the present invention within a range that a technical detail various modifications and outputted from a heavy person with skill in the art may be permitted per-case the art will. 100: chip resistance element 110: insulating substrate 120: resistor 130: resistance protective layer 131: number 1 resistance protective layer 132: number 2 and a protection resistor layer 133: number 3 resistance protective layer 140: number 1 terminal 141: internal electrode number 1 142: number 1 external electrode 150: number 2 terminal 151: internal electrode number 2 152: number 2 external electrode 1000: chip resistance component assembly An embodiment of the present invention provides a chip resistor element with excellent heating performance even if the chip resistor element is miniaturized. The chip resistor element comprises: an insulating substrate having first and second surfaces facing each other; a resistance layer arranged on the first surface; first and second terminals arranged on the insulating substrate at both ends of the first surface, and connected to the resistance layer; and a resistor protection layer arranged on the resistance layer between the first terminal and a third terminal and between the second terminal and the third terminal. The resistor protection layer includes: a first resistor protection layer being in contact with the resistance layer; a second resistor protection layer covering the first resistor protection layer, and composed of a material having thermal conductivity of 1 W/mK or higher; and a third resistor protection layer covering the second resistor protection layer. COPYRIGHT KIPO 2017 The number 1 and number 2 opposing each other in the face of the insulating substrate; a resistive layer placed on a face said number 1; the amount of said number 1 to number 1 and number 2 terminal end disposed on the insulated substrate connected to said resistance layer; and said number 1 and number 3 terminal disposed on said resistive layer between said number 2 and number 3 terminals further comprises a protective layer resistance, said resistance the protective layer, said protective layer contact resistance layer number 1 resistance, 1 W/mK thermal conductivity covers at least said number 1 resistance protective layer made of a material consisting number 2 resistance protective layer, protective layer including protective layer covering said number 2 and number 3 chip resistance element characterized resistance resistance. According to Claim 1, said number 1 and number 2 the pairs, said resistive layer which is arranged on the number 1 and number 2 inner electrode; and said number 1 and number 2 number 1 and number 2 characterized in including an external electrode surface corresponding internal electrode chip resistance element. According to Claim 2, said number 1 and number 2 inner electrode having a region overlapping said number 2 resistance the protection chip resistance element characterized. According to Claim 1, characterized in that said number 1 resistance protective layer including glass material chip resistance element. According to Claim 1, said number 2 Al resistance the protection layer2 O3 , AlN, BN, SiO2 Characterized including polymeric material mixed with at least one of chip resistance element, According to Claim 1, said number 2 and number 3 resistance protective layer has a total thickness of 5 to 30% of the thickness of said insulating substrate characterized in chip resistance element. According to Claim 1, said number 2 said number 1 and number 3 thermal conductivity higher than the thermal conductivity of the protective resistance characterized resistance protective layer chip resistance element. According to Claim 1, characterized in that said number 3 resistance protection layer strength resistance protection layer strength higher than said number 2 chip resistance element. A plurality of electrode pad connected to the printed circuit board; and said plurality of electrode pads electrically connected to said printed circuit board is disposed on the chip resistance element; wherein, said chip resistance element, number 1 and number 2 surface and opposing each other in the face of the insulating substrate, the resistance layer said number 1 arranged on the opposite side, the amount of said number 1 number 1 and number 2 connected to said resistance layer disposed on the insulated substrate end terminal, said number 1 and number 3 terminal between said number 2 and number 3 further comprises a protective layer disposed on said resistive layer terminals so as resistance, said resistance the protective layer, said protective layer resistance contact resistance layer number 1, number 2 resistance protective layer made of a material consisting at least 1 W/mK thermal conductivity covers said number 1 resistance protective layer, protective layer including protective layer covering said number 2 and number 3 chip resistance component assembly characterized resistance resistance. Chip code Chip size (inch) Comparison group electric power (W) The embodiment in the form of electric power (W) 1005 0. 4 × 0. 2 0. 063 0. 100 1608 0. 6 × 0. 3 0. 100 0. 125 2012 0. 8 × 0. 5 0. 125 0. 250 3216 1. 2 × 0. 6 0. 250 0. 667 5025 2. 0 × 1. 0 0. 667 1. 0
