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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 5384. Отображено 100.
05-01-2012 дата публикации

High-precision resistor and trimming method thereof

Номер: US20120001679A1
Автор: Antonello Santangelo, Stefania Maria Serena PRIVITERA
Принадлежит: STMICROELECTRONICS SRL

An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

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Номер записи: 1
31-05-2019 дата публикации

Мощный тонкопленочный резистор

Номер: RU0000189715U1
Автор: Татьяна Михайловна Калинина
Принадлежит: Акционерное общество "Финансово-промышленная компания "Энергия"

Полезная модель относится к электронной технике, а именно к производству постоянных резисторов по тонкопленочной технологии, и может быть использована в электронной, радиотехнической и других смежных отраслях промышленности при изготовлении мощных СВЧ резисторов.Сущность полезной модели: мощный тонкопленочный резистор включает диэлектрическую подложку из высокотеплопроводной керамики с полированной лицевой стороной и нанесенную на подложку резистивную пленку с электродными контактами, при этом лицевая сторона диэлектрической подложки отполирована до получения высоты неоднородности не более 0,1 мкм, при этом толщина резистивной пленки составляет не менее удвоенной высоты неоднородности.Технический результат: повышение стабильности сопротивления при длительной эксплуатации. 7 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 189 715 U1 (51) МПК H01C 17/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01C 17/00 (2019.02) (21)(22) Заявка: 2019107338, 14.03.2019 (24) Дата начала отсчета срока действия патента: 31.05.2019 Приоритет(ы): (22) Дата подачи заявки: 14.03.2019 (45) Опубликовано: 31.05.2019 Бюл. № 16 1 8 9 7 1 5 R U (54) Мощный тонкопленочный резистор (57) Реферат: Полезная модель относится к электронной технике, а именно к производству постоянных резисторов по тонкопленочной технологии, и может быть использована в электронной, радиотехнической и других смежных отраслях промышленности при изготовлении мощных СВЧ резисторов. Сущность полезной модели: мощный тонкопленочный резистор включает диэлектрическую подложку из высокотеплопроводной керамики с полированной Стр.: 1 2208256 C2, 10.07.2003. RU 2133514 C1, 20.07.1999. SU 1812562 A1, 30.04.1993. US 5119538 A, 09.06.1992. US 4929923 A, 29.05.1990. лицевой стороной и нанесенную на подложку резистивную пленку с электродными контактами, при этом лицевая сторона диэлектрической подложки отполирована до получения высоты неоднородности не более 0,1 мкм, при ...

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Номер записи: 2
01-03-2012 дата публикации

Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same

Номер: US20120050940A1
Автор: Nachiket Raravikar, Rahul Panat
Принадлежит: Individual

A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate ( 110, 210, 310 ), nanolithographically forming a first section ( 121, 221, 321 ) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections ( 122, 222, 322 ) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.

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Номер записи: 3
12-04-2012 дата публикации

Thermistor

Номер: US20120086542A1
Автор: Alexandre M. Bratkovski, Iakov Veniaminovitch Kopelevitch
Принадлежит: Hewlett Packard Development Co LP

A thermistor includes a multi-layer graphite structure having a basal plane resistivity that increases with increasing temperature; a substrate upon which the graphite structure is mounted; current and voltage electrodes attached to the graphite structure; current and voltage wiring; and a voltage measuring device to measure voltage out when current is applied to the thermistor.

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Номер записи: 4
28-06-2012 дата публикации

Coreless layer buildup structure

Номер: US20120160547A1
Автор: Frank D. Egitto, Rabindra N. Das, Timothy Antesberger, Voya R. Markovich, William E. Wilson
Принадлежит: Endicott Interconnect Technologies Inc

A substrate for use in a PCB or PWB board having a coreless buildup layer and at least one metal and at least one dielectric layer. The coreless buildup dielectric layers can consist of at least partially cured thermoset resin and thermoplastic resin.

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Номер записи: 5
11-04-2013 дата публикации

METAL-SEMICONDUCTOR CONVERGENCE ELECTRIC CIRCUIT DEVICES AND ELECTRIC CIRCUIT SYSTEMS USING THE SAME

Номер: US20130087786A1
Автор: Kim Bongjun, Kim Hyun-Tak
Принадлежит:

Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor. 1. A metal-semiconductor convergence electric circuit device , comprising:a semiconductor device;a metal resistor disposed adjacent to the semiconductor device, the metal resistor exhibiting resistance increased with an increase in temperature thereof; andan interconnection line connecting the semiconductor device with the metal resistor in series, the interconnection line having a resistance lower than that of the metal resistor,wherein the metal resistor has resistance of about 0.2 to about 10, and the semiconductor device exhibits resistance decreased with an increase in temperature thereof to compensate the resistance increase of the metal resistor.2. The device of claim 1 , wherein the metal resistor has resistance of about 0.5 to about 1.3. The device of claim 1 , wherein the metal resistor is a metal oxide transition device or a metal wire.4. The device of claim 3 , wherein the metal oxide transition device comprises at least one of VO claim 3 , W-doped VO claim 3 , Mn-doped VO claim 3 , Cr-doped VO claim 3 , VO claim 3 , MnO claim 3 , CrO claim 3 , TiO claim 3 , ZnO claim 3 , YBaCuO claim 3 , n-type BaTiO claim 3 , SrLaTiO(0.01 Подробнее

Номер записи: 6
11-04-2013 дата публикации

CHIP THERMISTOR AND METHOD OF MANUFACTURING SAME

Номер: US20130088319A1
Автор: SAITO Yo, TSUCHIDA Daisuke, YAMADA Kouki
Принадлежит: TDK Corporation

A chip thermistor has a thermistor portion including a ceramic material containing respective metal oxides of Mn, Ni, and Co as major ingredients; a pair of composite portions including a composite material of Ag—Pd, and respective metal oxides of Mn, Ni, and Co and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; and external electrodes connected to the pair of composite portions, respectively. In this manner, the pair of composite portions are used as bulk electrodes and, for this reason, the resistance of the chip thermistor can be adjusted mainly with consideration to the resistance in the thermistor portion without need for much consideration to the distance between the external electrodes and other factors. 1. A chip thermistor comprising:a thermistor portion comprised of a ceramic material containing a metal oxide as a major ingredient;a pair of composite portions comprised of a composite material including a metal and a metal oxide and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; andexternal electrodes arranged at both ends in a longitudinal direction of an substantially rectangular parallelepiped shaped element body which includes the thermistor portion and the pair of composite portions, the external electrodes are connected to the pair of composite portions respectively.2. The chip thermistor according to claim 1 , wherein each of the external electrodes is configured to cover respective end faces in the longitudinal direction of the element body.3. The chip thermistor according to claim 1 , wherein each of the external electrodes is configured to oppose to each other on at least one side face which extends along the longitudinal direction of the element body.4. The chip thermistor according to claim 1 , wherein the thermistor portion is configured in a layered structure such that a direction in which ...

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Номер записи: 7
18-04-2013 дата публикации

3D MEMORY AND DECODING TECHNOLOGIES

Номер: US20130094273A1
Автор: CHIEN WEI-CHIH, LEE MING-HSIU, LUNG HSIANG-LAN
Принадлежит:

A 3D memory device is based on an array of conductive pillars and a plurality of patterned conductor planes including left side and right side conductors adjacent the conductive pillars at left side and right side interface regions. Memory elements in the left side and right side interface regions comprise a programmable transition metal oxide which can be characterized by built-in self-switching behavior, or other programmable resistance material. The conductive pillars can be selected using two-dimensional decoding, and the left side and right side conductors in the plurality of planes can be selected using decoding on a third dimension, combined with left and right side selection. 1. A memory device , comprising:an array of access devices;a plurality of patterned conductor layers, separated from each other and from the array of access devices by insulating layers, the plurality of patterned conductor layers including left side and right side conductors;an array of conductive pillars extending through the plurality of patterned conductor layers, the conductive pillars in the array contacting corresponding access devices in the array of access devices, and defining left side and right side interface regions between the conductive pillars and adjacent left side and right side conductors in corresponding patterned conductor layers in the plurality of patterned conductor layers; andmemory elements in the left side and right side interface regions, each of said memory elements comprising a programmable and erasable memory material.2. The memory device of claim 1 , including:row decoding circuits and column decoding circuits coupled to the array of access devices arranged to select a conductive pillar in the array of conductive pillars; andleft and right plane decoding circuits coupled to the left side and right side conductors in the plurality of patterned conductor layers arranged to turn on current flow in a selected cell in a left side or right side interface region ...

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Номер записи: 8
25-04-2013 дата публикации

Heater Rod Comprising a Casing in Which at Least One Electrical Resistance Heating Element is Mounted

Номер: US20130098896A1
Автор: SCHOTT Christian, Toussaint Jacques
Принадлежит: VULCANIC

A heater rod has a casing in which at least one electrical resistance heating element is mounted, an internai insulator being placed in the casing to ensure thermal conduction and electrical insulation between the resistance element and the casing, the resistance element being formed from at least one heating wire having a helical geometry and the internai insulator being based on boron nitride. 19-. (canceled)10. A heater rod comprising a casing wherein at least one electrical resistance heating element is mounted , an internal insulator being placed in the casing in order to ensure thermal conduction and electrical insulation between at least one electrical resistance and said casing , said at least one electrical resistance being formed from at least one heating wire which has a helical geometry , and the internal insulator having a boron nitride base.11. The heater rod according to claim 10 , wherein the internal insulator has the form of pellets of compressed boron nitride.12. The heater rod according to claim 10 , further comprising an insulating insert around which the helicoid of the at least one heating wire extends.13. The heater rod according to claim 12 , wherein the insulating insert is made from a material base which is different from that of the internal insulator.14. The heater rod according to claim 12 , wherein the insulating insert is made from a ceramic or magnesia base.15. The heater rod according to claim 10 , wherein said at least one electrical resistance comprises two electrical resistances mounted in the casing by being connected electrically in series.16. The heater rod according to claim 10 , wherein the at least one heating wire of the at least one electrical resistance is connected electrically to a connector projecting from the casing by means of a non-heating wire.17. A method for carrying out a heater rod according to claim 10 , comprising:placing at least one electrical resistance heating element formed of at least one heating wire ...

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Номер записи: 9
02-05-2013 дата публикации

CHIP RESISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20130104389A1
Автор: YONEDA Masaki
Принадлежит: ROHM CO., LTD.

A method of manufacturing a chip resistor includes the following steps. A resistor layer is formed on an obverse surface of a material substrate. A plurality of substrate sections are defined in the material substrate by forming, in the obverse surface of the material substrate, a plurality of first grooves each of which is elongated in a first direction. A conductor layer is formed in each of the first grooves. The substrate sections are cut along lines extending in a second direction different from the first direction. 1. A method of manufacturing a chip resistor , the method comprising the steps of:forming a resistor layer on an obverse surface of a material substrate;defining a plurality of substrate sections in the material substrate by forming, in the obverse surface of the material substrate, a plurality of first grooves each being elongated in a first direction;forming a conductor layer in each of the first grooves; andcutting the substrate sections in a second direction different from the first direction.2. The method according to claim 1 , wherein each of the first grooves includes a bottom surface.3. The method according to claim 2 , further comprising the step of forming claim 2 , in the bottom surface of each first groove claim 2 , a second groove smaller in width than said each first groove.4. The method according to claim 1 , wherein the resistor layer comprises a plurality of resistor rows spaced from each other in the second direction claim 1 , each of the resistor rows comprising a plurality of resistor strips arranged in the first direction claim 1 , each of the resistor strips being elongated in the second direction claim 1 ,wherein in the step of defining a plurality of substrate sections, each of the first grooves is formed between adjacent two of the resistor rows.5. The method according to claim 4 , further comprising the step of forming a surface electrode layer on the obverse surface of the material substrate before the step of forming a ...

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Номер записи: 10
02-05-2013 дата публикации

HEATER FOR AN AUTOMOTIVE VEHICLE AND METHOD OF FORMING SAME

Номер: US20130106147A1
Автор: Csonti Sergiu, Iqbal Syed Rafat, Lazanja Marinko, Normand Tim, Spasojevic Igor, Zuzga Matthew
Принадлежит: W.E.T. AUTOMOTIVE SYSTEMS, LTD.

A heated seat () comprising: a cushion with one or more trench () areas; a heater () comprising: a carrier () with a periphery, the carrier () further including: a first electrically functional layer () that is made of a conductive material that substantially circumscribes at least a portion of the carrier (); and a second electrically functional layer () that is made of a resistive material; one or more electrical conductors {} attached to the first electrically functional layer; a trim layer () that covers the cushion when the heater is placed over the cushion, and wherein the periphery includes a first side edge () and a second side edge (), and each side edge includes a cutout (), and the cutouts are located adjacent to each other—forming a neck portion (); wherein the heater is attached to the cushion by placing an attachment device () over the neck portion () of the heater and securing one or both ends of the attachment, device () to the cushion so that the neck portion () is pulled Into the trench (); wherein the neck portion () is free of the second electrically functional layer (); and wherein the first electrically functional layer () and the second electrically functional layer (} form a checkered pattern. 1) A heated seat comprising:a. a cushion with one or more trench areas; 1. a first electrically functional layer that is made of a conductive material that substantially circumscribes at least a portion of the carrier; and', '2. a second electrically functional layer that is made of a resistive material;', '3. one or more electrical conductors attached to the first electrically functional layer;, 'i. a carrier with a periphery, the carrier further including, 'b. a heater comprisingc. a trim layer that covers the cushion when the heater is placed over the cushion; andwherein the periphery includes a first side edge and a second side edge, and each side edge includes a cutout, and the cutouts are located adjacent to each other forming a neck portion; ...

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Номер записи: 11
09-05-2013 дата публикации

Plastic Tubular Connecting Sleeve for a Pipe with Internal Liner

Номер: US20130114945A1
Автор: Pionetti François-Régìs, Rocher Xavier
Принадлежит:

pipe having at least two steel pipe elements with internal lining that are assembled together end to end, with the ends of the two pipe elements being welded together. A tubular junction sleeve is interposed inside the pipe at the abutting ends of the two pipe elements so that the end terminal portions of the sleeve are at least in part in leaktight contact with respective ones of the terminal portions at the ends of the internal linings of the two pipe elements. The leaktight contact zone is a zone of fusion welding together the materials in mutual contact constituting at least a portion of each terminal portion of the sleeve and of each respective terminal portion of the lining. At each of the terminal portions of the sleeve in the leaktight contact zone, the tubular junction sleeve presents a Joule effect heater wire arranged in a double spiral on the outer surface of each terminal portion at the ends of the sleeve. 115-. (canceled)16. A tubular junction sleeve of thermoplastic material suitable for being inserted inside a pipe comprising at least two steel pipe elements that are internally lined with a thermoplastic material where the ends of the two welded together pipe elements are assembled end to end , said sleeve presenting at each end a tubular wall terminal portion of thickness that is smaller than the thickness of the adjacent running portion of the tubular wall of said sleeve , said sleeve presenting a Joule effect heater wire at at least one of said terminal portions of the sleeve , and preferably at each of them , the wire being arranged in a spiral at the outer surface of said terminal portion of said sleeve , wherein said heater wire is folded in half so as to form a double spiral made up of two wire portions arranged side by side forming two substantially equidistant spirals that are joined together at a common end constituted by a hairpin-bend , each spiral traveling along said outer surface of each terminal portion of the sleeve from the first ...

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Номер записи: 12
06-06-2013 дата публикации

METHOD OF MANUFACTURING THERMAL HEAD, AND THERMAL PRINTER

Номер: US20130141507A1
Автор: KOROISHI Keitaro, MOROOKA Toshimitsu, SANBONGI Norimitsu, SHOJI Noriyoshi
Принадлежит: SEIKO INSTRUMENTS INC.

A method of manufacturing a thermal head, comprising the steps of: bonding a support substrate and an upper substrate, which have a flat shape, together in a laminated state, the support substrate and the upper substrate having opposed surfaces, at least one of which includes a concave portion; thinning the upper substrate bonded onto the support substrate; a measurement step of measuring a thickness of the thinned upper substrate; determining a target resistance value of a heating resistor from the following expression based on the measured thickness of the upper substrate; and forming the heating resistor having the target resistance value at a position opposed to the concave portion, Rh=R×(1+(D+D)/(D+K)) where Rh represents the target resistance value; R, a design resistance value; D, the thickness of the upper substrate; D, a design thickness of the upper substrate; and K, a heating efficiency coefficient. 2. A method of manufacturing a thermal head according to claim 1 , wherein the forming the heating resistor comprises:a first step of forming a heating resistor having an arbitrary resistance value;a second step of measuring the resistance value of the heating resistor formed in the first step; anda third step of adjusting the resistance value of the heating resistor so as to reduce a difference between the resistance value measured in the second step and the target resistance value.3. A method of manufacturing a thermal head according to claim 2 , wherein the third step comprises applying predetermined energy to the heating resistor to adjust the resistance value.4. A method of manufacturing a thermal head according to claim 3 , wherein the applying the predetermined energy comprises using a voltage pulse.5. A method of manufacturing a thermal head according to claim 3 , wherein the applying the predetermined energy comprises using laser light.6. A thermal printer claim 1 , comprising a thermal head manufactured by the method of manufacturing a thermal head ...

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Номер записи: 13
13-06-2013 дата публикации

Variable Temperature Seal Element

Номер: US20130146227A1
Автор: Mileti Robert J.
Принадлежит:

Devices and methods for fusing materials using a heating element, where the overall mass to be sealed varies along the length of the seal. According to the invention, the heating element has a different profile in different areas. According to some aspects, the thickness and/or cross section of the heating element is different in different areas so that when a current is passed through the heating element, each area heats to a different degree. In some aspects, the heating element is shaped to conform to the shape of the parts to be fused together. The transition between areas of different thickness or cross-sectional area, or between areas of different shape may be sharply defined. This abrupt transition may be created by machining the heating element to a finished shape rather than bending flat stock to shape. 1. A heat sealer for fusing components; comprising:a heating element;an electrical power source connected to the heating element; and,a holder configured to position the components with respect to the heating element;wherein:said heating element comprising a resistive material having a first end and a second end;a first portion of said heating element exhibiting a first electrical resistance;a second portion of said heating element exhibiting a second electrical resistance that is different from the first electrical resistance; and,wherein when electrical current is passed through said heating element, the first portion and the second portion generate different heat levels.2. The heat sealer of claim 1 , wherein an amount of heat transferred to the components from the first portion is greater than an amount of heat transferred to the components from the second portion.3. The heat sealer of claim 1 , wherein said first portion and said second portion are joined at a transition such that the first resistance transitions to the second resistance at the transition.4. The heat sealer of claim 1 , whereinsaid first portion has a first cross-sectional area; and, ...

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Номер записи: 14
20-06-2013 дата публикации

Method for making wave-shaped heating unit

Номер: US20130152382A1
Автор: Shu-Lien Chen
Принадлежит: Individual

A method for making a wave-shaped heating unit and includes a step of preparing a housing by compressing a metal tube to form an elongate tube with an oval cross section; a step of inserting a heating plate by inserting a soft heating plate into the housing, and two respective first ends of two wires connected to the heating plate; a step of clamping by compressing the elongate tube to clamp the heating plate within the housing, two respective second ends of the two wires extending beyond the housing, and a step of forming wave-shape by bending the housing into continuous convex portions and concaved portions.

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Номер записи: 15
20-06-2013 дата публикации

MOISTURE RESISTANT LAYERED SLEEVE HEATER AND METHOD OF MANUFACTURE THEREOF

Номер: US20130152383A1
Автор: ANTOSCH Gernot, BOLDT Allen, FENNEWALD Kenneth, KENCHEL Matt, POESCHL Wolfgang, PTASIENSKI Kevin, RUSSEGGER Elias, SCHEFBANKER Gerhard, WALLINGER Martin
Принадлежит: WATLOW ELECTRIC MANUFACTURING COMPANY

A method of forming a layered heater assembly includes: forming a plurality of layers onto a substrate, the plurality of layers including a resistive element layer; forming electrical terminations in contact with the resistive element layer; securing a protective cover over the layers using a laser welding process, wherein edges of the protective cover are welded circumferentially around raised end portions of the substrate and welded longitudinally along a slotted portion of the substrate; securing a pair of lead wires to the electrical terminations; and securing a lead cap assembly around the pair of lead wires and to the protective cover using a laser welding process. 1. A method of forming a heater assembly comprising:forming a plurality of layers onto a substrate using a thermal spray process, wherein a recessed area for a termination is disposed on the layers;forming electrical terminations proximate the recessed area;securing a protective cover over the layers using a laser welding process, wherein edges of the protective cover are welded circumferentially around raised end portions of the substrate and welded longitudinally along a slotted portion of the substrate;securing a pair of lead wires to the electrical terminations within the recessed area; andsecuring a lead cap assembly around the pair of lead wires and to the protective cover.2. The method according to claim 1 , wherein the plurality of layers includes a resistive element layer that is formed by a laser removal process.3. The method according to claim 1 , wherein the lead wires are secured to the electrical terminations using a laser welding process.4. The method according to claim 1 , wherein the lead cap assembly is secured to the protective cover using a laser welding process.5. The method according to claim 1 , wherein the lead wires are secured to the electrical terminations with a termination spring claim 1 , and the termination spring is severed after the termination spring is secured to ...

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Номер записи: 16
20-06-2013 дата публикации

Low temperature resistor for superconductor circuits

Номер: US20130157864A1
Автор: David J. Phillips, Erica C. Folk, John J. Talvacchio, Sean R. McLaughlin
Принадлежит: Northrop Grumman Systems Corp

A integrated circuit and methods for fabricating the circuit are provided. The circuit integrates at least one circuit element formed from a material that is superconducting at temperatures less than one hundred milliKelvin and at least one resistor connected to the circuit element. The resistor is formed from an alloy of transition metals that is resistive at temperatures less than one hundred milliKelvin.

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Номер записи: 17
04-07-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130168817A1
Автор: FURUTAKE Naoya, Hayashi Yoshihiro, INOUE Naoya, Kawahara Jun
Принадлежит: RENESAS ELECTRONICS CORPORATION

A semiconductor device includes a first insulating layer (interlayer insulating layer), a resistive element that is disposed over the first insulating layer (interlayer insulating layer) and at least a surface layer of which is a TaSiN layer, and an interlayer insulating layer disposed over the first insulating layer (interlayer insulating layer) and the resistive element. Multiple via plugs having ends coupled to the TaSiN layer are disposed in the interlayer insulating layer. 1. A semiconductor device comprising:a first insulating layer;a resistive element disposed over the first insulating layer, at least a surface layer of the resistive element being a TaSiN layer;an interlayer insulating layer disposed over the first insulating layer and the resistive element; anda plurality of via plugs provided in the interlayer insulating layer and having ends coupled to the TaSiN layer.2. The semiconductor device according to claim 1 ,wherein an absolute temperature coefficient of resistance of the resistive element is 0 ppm/° C. or more and 50 ppm/° C. or less.3. The semiconductor device according to claim 1 ,wherein the TaSiN layer is a modified layer formed by applying a Si-containing gas to a TaN layer.4. The semiconductor device according to claim 1 ,wherein a composition ratio of the TaSiN layer changes so that a Si concentration becomes higher toward a surface layer of the TaSiN layer.5. The semiconductor device according to claim 1 ,wherein the resistive element further comprises a TaN layer, andwherein the TaSiN layer is disposed over a surface layer of the TaN layer.6. The semiconductor device according to claim 1 , further comprising:a SiN layer disposed over the resistive element.7. The semiconductor device according to claim 1 ,wherein the TaSiN layer is amorphous.8. The semiconductor device according to claim 1 ,{'sup': 2', '7, 'wherein the TaSiN layer has a sheet resistance of 10Ω/sq or more and 10Ω/sq or less.'}9. The semiconductor device according to claim ...

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Номер записи: 18
18-07-2013 дата публикации

Printed circuit board with embedded heater

Номер: US20130180973A1
Автор: Gil White
Принадлежит: Individual

Aspects of the present invention are directed to providing a printed circuit board including a top conductive layer; a bottom conductive layer; a plurality of electronic components arranged on at least one of the top conductive layer or the bottom conductive layer; a heater layer interposed between the top conductive layer and the bottom conductive layer and configured to generate and transfer heat to at least one of the electronic components.

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Номер записи: 19
25-07-2013 дата публикации

CHIP RESISTOR AND MANUFACTURING METHOD THEREOF

Номер: US20130187749A1
Автор: NAKA Kentaro, TSUKADA Torayuki
Принадлежит: ROHM CO., LTD.

A method of manufacturing a chip resistor includes forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and dividing the resistor assembly into chip resistors, each including a chip-shaped resistance body formed by a part of the resistance body member, a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction, and a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching. 1. A method of manufacturing a chip resistor , comprising:forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and a chip-shaped resistance body formed by a part of the resistance body member;', 'a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction; and', 'a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching., 'dividing the resistor assembly into chip resistors, each of the chip resistors including2. The method of claim 1 , wherein the resistance body member has at least one elongated resistance body plate extended in the second direction claim 1 ,wherein the conductive member has a plurality of elongated conductive plates, each being extended in the second direction, and arranging the plurality of elongated conductive plates to be separated from each other in the ...

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Номер записи: 20
01-08-2013 дата публикации

ELECTRONIC CIGARETTE AND METHOD

Номер: US20130192619A1
Автор: Jordan Geoffrey Brandon, Mullins Michael J., Rostami Ali A., Smith Barry S., Tucker Christopher S.
Принадлежит: ALTRIA CLIENT SERVICES INC.

An electronic smoking article includes an outer tube extending in a longitudinal direction, an inner tube within the outer tube and including a pair of opposing slots, a liquid supply comprising a liquid material, a coil heater, a wick and a mouth end insert. The coil heater is located in the inner tube. The coil heater is formed of an iron-free, nickel-chromium alloy and has substantially uniformly spaced windings. The wick is surrounded by the coil heater such that the wick delivers liquid material to the coil heater and the coil heater heats the liquid material to a temperature sufficient to vaporize the liquid material and form an aerosol in the inner tube. 1. A method of manufacturing an electronic smoking article wherein a wick is surrounded by a coil heater such that the wick delivers liquid material to the coil heater and the coil heater heats the liquid material to a temperature sufficient to vaporize the liquid material and form an essentially carbonyl free aerosol , the method comprising:forming a heater coil about a wick, the forming step including establishing coil windings having substantially uniform spacing between each winding; andmaintaining the spacing during manufacture of the electronic smoking article.2. The method of wherein the maintaining step includes providing clearance for the coil windings when inserting the heater coil in an inner tube extending in a longitudinal direction within the electronic smoking article.3. The method of claim 2 , wherein the maintaining step further includes placing a closure ring proximate to the wick to at least partially close said clearance claim 2 , the placing step being completed essentially without imparting a bending moment upon the heater coil.4. An electronic smoking article comprising:an outer tube extending in a longitudinal direction;an inner tube within the outer tube, the inner tube including a pair of opposing slots;a liquid supply comprising a liquid material, the liquid supply contained in an ...

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Номер записи: 21
08-08-2013 дата публикации

ARMOURED RESISTOR WITH AN END SEALING ELEMENT

Номер: US20130200985A1
Автор: "Palu Gianni", Biasi Maurizio, Colombo Roberto
Принадлежит:

Armoured resistor with an end sealing element in which the electric pin () partially projecting from an end (′) of the armour () and connected to said end by said sealing element () is provided with a part () with high roughness, i.e. knurling and/or toothing (′″) and/or a circular groove (′), moreover said end (′) of the armour is crimped in order to compress said sealing element () against said zone with high roughness. 2. The resistor according to claim 1 , wherein said portion of peripheral surface comprises at least one peripheral circular groove.3. The resistor according to claim 1 , wherein said first end of the armour is deformed so that said annular element interpenetrates with said peripheral surface.4. The resistor according to claim 1 , wherein said peripheral surface comprises only toothing with parallel extension relative to said axis of longitudinal extension (X).5. The resistor according to claim 1 , wherein said annular element is a sealing bead.6. The resistor according to claim 5 , wherein the sealing bead is made of plastic material or fluorinated material (PTFE-PFA).7. The resistor according to claim 5 , further comprising a bushing with axial symmetry encircling said thermal fuse inside the armour.8. The resistor according to claim 7 , wherein said bushing and said sealing bead are contiguous with respect to said axis of longitudinal extension (X).9. The resistor according to claim 8 , further comprising a gasket of annular shape interposed between said sealing bead and said bushing in order to encircle said electric pin.10. The resistor according to claim 1 , wherein said annular element is a bushing made of plastic material or fluorinated material (PTFE-PFA) encircling said thermal fuse inside the armour and in which said sealing element is made of silicone material.11. A Method of assembly of an armoured resistor according to comprising the following successive steps:positioning said annular element on the electric pin, so that said electric ...

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Номер записи: 22
08-08-2013 дата публикации

SEMICONDUCTOR CERAMIC ELEMENT AND METHOD FOR PRODUCING SAME

Номер: US20130200989A1
Автор: MIURA Tadamasa
Принадлежит: MURATA MANUFACTURING CO., LTD.

A semiconductor ceramic element includes an element main body where a PTC section including a semiconductor ceramic which has PTC characteristics and an NTC section including a semiconductor ceramic which has NTC characteristics are integrated by co-firing while suppressing interdiffusion. The element main body is formed in such a way that a PTC substrate is first obtained by firing a semiconductor ceramic material to serve as the PTC section at a predetermined temperature, and a paste containing a semiconductor ceramic material to serve as the NTC section is then applied or printed on the PTC substrate, followed by co-firing at a temperature lower than the predetermined temperature. 1. A semiconductor ceramic element comprising:an element main body including a PTC section that includes a semiconductor ceramic with PTC characteristics and an NTC section including a semiconductor ceramic with NTC characteristics, the PTC section and the NTC section being integrated in direct contact with each other with a bonded interface interposed therebetween;a first electrode provided on an outer surface of the element main body so as to contact the PTC section; anda second electrode provided on the outer surface of the element main body so as to contact the NTC section; whereinthe semiconductor ceramic element has combined electrical characteristics including PTC characteristics and NTC characteristics.2. The semiconductor ceramic element according to claim 1 , wherein the PTC section includes a BaTiO-based oxide.3. The semiconductor ceramic element according to claim 1 , wherein the NTC section includes a Mn-based spinel-type oxide.4. The semiconductor ceramic element according to claim 2 , wherein a Ti interdiffusion distance at the bonded interface between the PTC section and the NTC section is about 50 μm or less.5. The semiconductor ceramic element according to claim 3 , wherein a Mn interdiffusion distance at the bonded interface between the PTC section and the NTC section ...

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Номер записи: 23
15-08-2013 дата публикации

EMBEDDED TUNGSTEN RESISTOR

Номер: US20130207221A1
Автор: Kunz Keith Edmund, McMULLAN Russell Carlton, Narayan Subramanian J., Pushkarakshan Binu Kamblath, Sankaran Swaminathan
Принадлежит: TEXAS INSTRUMENTS INCORPORATED

A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer. 1. An integrated circuit , comprising:a well;a silicided active geometry in said well where said silicide forms a Shottky diode to said well;a tungsten resistor formed on said silicide.2. The integrated circuit of where said well is an nwell and where said silicide is titanium silicide claim 1 , cobalt silicide claim 1 , or nickel silicide.3. The integrated circuit of where said well is an isolated pwell and where said silicide is titanium silicide claim 1 , cobalt silicide claim 1 , or nickel silicide.4. The integrated circuit of further comprising:two parallel polysilicon leads whose length is equal to or greater than a body of said tungsten resistor;sidewall dielectric on vertical sidewalls of said parallel polysilicon leads; andwhere said body of said tungsten resistor lies between said parallel polysilicon leads, where a width of said tungsten resistor is defined by a spacing between said parallel polysilicon leads and where said sidewall dielectric prevents said tungsten resistor from shorting to said parallel polysilicon leads.5. The integrated circuit of claim 1 , wherein said Shottky diode is reversed ...

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Номер записи: 24
15-08-2013 дата публикации

Resistance Component and Method for Producing a Resistance Component

Номер: US20130207770A1
Автор: Rinner Franz
Принадлежит: EPCOS AG

A resistance component includes a stack of ceramic layers and inner electrodes. Inner electrodes of a first type are electrically conductively connected to a first external contact and inner electrodes of a second type are electrically conductively connected to a second external contact. The inner electrodes of the first type are arranged such that there is no overlap with the inner electrodes of the second type. An inner electrode of a third type, which is electrically conductively connected neither to the first external contact nor to the second external contact, at least partially overlaps the inner electrodes of the first type and the inner electrodes of the second type. 115-. (canceled)16. A resistance component , comprising:a stack composed of ceramic layers;a first external contact;a second external contact;internal electrodes of a first type, which are electrically conductively connected to the first external contact;internal electrodes of a second type, which are electrically conductively connected to the second external contact; andan internal electrode of a third type, which is electrically conductively connected to neither the first external contact nor the second external contact;wherein the internal electrodes of the first type are arranged in a manner free of overlap with the internal electrodes of the second type;wherein the internal electrode of the third type at least partly overlaps the internal electrodes of the first type and the internal electrodes of the second type; andwherein, for each internal electrode of the third type, at least three internal electrodes of the first type and three internal electrodes of the second type are provided.17. The component according to claim 16 , wherein the first and second external contacts are arranged on opposite side faces of the component.18. The component according to claim 16 , wherein the internal electrode of the third type at a substantially identical distance from two opposite side faces of the ...

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Номер записи: 25
15-08-2013 дата публикации

Metal nanoparticle organic composite film and method for its preparation

Номер: US20130210679A1
Автор: Gabriele Nelles, Isabelle Raible, Nadejda Krasteva, Yvonne Joseph
Принадлежит: Sony Corp

The present invention relates to method for preparing a metal nanoparticle organic composite film, preferably a metal nanoparticle organic composite film of a chemical sensing device, to a metal nanoparticle organic composite film obtained by said method, and to a chemical sensing device comprising a metal nanoparticle organic composite film or an array of different metal nanoparticle organic composite films obtained by said method.

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Номер записи: 26
29-08-2013 дата публикации

THERMISTOR AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130221584A1
Автор: MIURA Tadamasa
Принадлежит: MURATA MANUFACTURING CO. LTD.

An NTC thermistor having a metal base material, a thermistor film layer formed on the metal base material, and a pair of split electrodes formed on the thermistor film layer. A ceramic slurry is applied onto a carrier film to form the thermistor film layer, a metal powder containing paste is applied onto the thermistor film layer to form the metal base material, and further an electrode paste is applied onto the metal base material to form the split electrodes. Thereafter, the three substances are integrally fired. 1. A method for manufacturing a thermistor having a metal base material , a thermistor film layer adjacent the metal base material , and a pair of split electrodes adjacent the thermistor film layer , the method comprising:applying a ceramic slurry onto a carrier film with a predetermined thickness to form a ceramic green sheet serving as the thermistor film layer;applying a metal powder containing paste onto the ceramic green sheet with a predetermined thickness to form a metal base material sheet serving as the metal base material;applying an electrode paste onto a surface of the ceramic green sheet with a predetermined thickness to form a split electrode pattern serving as the split electrodes; andintegrally firing the metal base material sheet, the ceramic green sheet, and the split electrode pattern.2. The method for manufacturing a thermistor according to claim 1 , wherein a thickness of the metal base material after firing is 10 to 80 μm claim 1 , and a thickness of the thermistor film layer after firing is 1 to 10 μm.3. The method for manufacturing a thermistor according to claim 1 , wherein when a distance between the split electrodes after firing is defined as Lp and a thickness of the thermistor film layer after firing is defined as Tt claim 1 , Lp≧Tt+5 μm.4. The method for manufacturing a thermistor according to claim 1 , wherein a distance from an end portion of the split electrodes after firing to an end portion of the thermistor film layer ...

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Номер записи: 27
03-10-2013 дата публикации

DAUGHTER CIRCUIT BOARD FOR INTERFACE SIGNAL CONVERSION

Номер: US20130258612A1
Автор: ZHANG Xiansheng, ZHAO Yong
Принадлежит: ZHONGSHAN BROAD-OCEAN MOTOR CO., LTD.

A daughter circuit board of a brushless DC motor for interface signal conversion, having circuit units integrated on the daughter circuit and eight ports for communicating with a control system of a user terminal. The daughter circuit board is plugged into a motor controller for signal conversion so that the motor controller communicates with the control system of the user terminal. The eight ports include a signal input port of analog control, a signal port for activating a fan mode, signal ports of speed feedback, a reserved signal port, a port of COM, a port of DC power supply, and a R/T port. 234. The daughter circuit board of claim 1 , wherein the port M is at a low level claim 1 , and the port M is an open collector output.37. The daughter circuit board of claim 1 , further comprising an identify circuit () claim 1 , wherein{'b': '7', 'the identify circuit () is a voltage divider circuit comprising serially-connected resistors;'}{'b': 7', '7, 'one port of the identify circuit () is connected to a power supply, another port of the identify circuit () is connected to the ground; and'}an output port BSEL of the indentify circuit is connected to an input port of a micro control unit (MCU) of the motor controller.43. The daughter circuit board of claim 1 , wherein the third signal conversion circuit () is connected to a pulse counter.51234. The daughter circuit board of claim 1 , wherein the first claim 1 , second claim 1 , third claim 1 , and fourth signal conversion circuits () claim 1 , () claim 1 , () claim 1 , and () are conventional photoelectric coupling circuit units.61234. The daughter circuit board of claim 2 , wherein the first claim 2 , second claim 2 , third claim 2 , and fourth signal conversion circuits () claim 2 , () claim 2 , () claim 2 , and () are conventional photoelectric coupling circuit units.71234. The daughter circuit board of claim 3 , wherein the first claim 3 , second claim 3 , third claim 3 , and fourth signal conversion circuits () ...

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Номер записи: 28
24-10-2013 дата публикации

TUNABLE RESISTANCE COATINGS

Номер: US20130280546A1
Автор: Elam Jeffrey W., Mane Anil U.
Принадлежит:

A method and article of manufacture of intermixed tunable resistance composite materials containing at least one of W:AlO, Mo:AlOor M:AlOwhere M is a conducting compound containing either W or Mo. A conducting material and an insulating material are deposited by such methods as ALD or CVD to construct composites with intermixed materials which do not have structure or properties like their bulk counterparts. 1. A method of tunably forming a film of selected resistance and thickness comprising:selecting a starting conducting material selected from the group of W, Mo, and their conducting compounds, and selecting a starting insulating material;performing a deposition of a prescribed amount of the starting conducting material;performing a deposition of a prescribed amount of the starting insulating material;repeating these two steps a prescribed number of times to achieve a film with the selected resistance and thickness for an end product.2. The method as defined in wherein the deposition steps comprises using a deposition method selected from the group of ALD claim 1 , CVD claim 1 , MOCVD claim 1 , OMCVD claim 1 , PECVD claim 1 , PVD claim 1 , MBE claim 1 , reactive sputtering claim 1 , PLD and evaporation claim 1 , or combinations thereof.3. The method as defined in wherein the deposition steps comprises using ALD with (a) alternating exposures of MoFand at least one of disilane claim 1 , ammonia claim 1 , or TMA for the film containing Mo as the conducting material; (b) alternating exposures WFand either disilane claim 1 , ammonia claim 1 , or TMA for the film containing W as the conducting material; (c) alternating exposures of TMA and HO for films containing AlOas the insulating material.4. The method as defined in wherein the starting conducting material has a resistivity of about 10to 10 Ωcm.5. The method as defined in wherein the starting insulating material is selected from the group of insulating metal oxides and metal nitrides.6. The method as defined in ...

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Номер записи: 29
07-11-2013 дата публикации

STEERING WHEEL INCLUDING HEATING ELEMENT

Номер: US20130292368A1
Автор: Cho Man Ho
Принадлежит:

A steering wheel includes a heating element which heats an entire rim to a uniform temperature. The heating element is coated as an electrically conductive paste on a surface of the rim, and is formed such that an electrical resistance increases away from an inner diameter portion of the rim toward an outer diameter portion of the rim. 1. A steering wheel comprising a rim , and a heating element coated on a surface of the rim , the heating element being heated by power supply ,wherein the heating element comprises an electrically conductive paste which includes:a first heating part which is coated in a longitudinal direction of the rim along an inner diameter portion of the rim by continuously connecting loops having the same shape;a second heating part which is coated in the longitudinal direction of the rim along an outer diameter portion of the rim by continuously connecting loops having the same shape, anda third heating part which is coated in the longitudinal direction of the rim by continuously connecting loops having the same shape between the first heating part and the second heating part,wherein an electrical resistance decreases in order of the first heating part, the third heating part, and the second heating part.2. The steering wheel of claim 1 , further comprising a plurality of first connection units which electrically connect the first heating part and the third heating part.3. The steering wheel of claim 2 , further comprising a plurality of second connection units which electrically connect the second heating part and the third heating part.4. The steering wheel of claim 1 , further comprising a decoration pattern layer which is formed by transferring a transfer film claim 1 , on which a decoration pattern is printed claim 1 , onto a surface of the heating element.5. The steering wheel of claim 3 , further comprising a decoration pattern layer which is formed by transferring a transfer film claim 3 , on which a decoration pattern is printed claim ...

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Номер записи: 30
07-11-2013 дата публикации

HEATING ELEMENT AND MANUFACTURING METHOD THEREOF

Номер: US20130292373A1
Автор: Choi Hyeon, Hong Young-Jun, Kim Ki-Hwan, KIM Su-Jin
Принадлежит:

The present invention provides a heating element, including a transparent substrate, an adhesive agent layer provided on at least one side of the transparent substrate, a conductive heat emitting line provided on the adhesive agent layer, a coating film capsulating the conductive heat emitting line and an upper side of the adhesive agent layer not covered by the heat emitting line, a bus bar electrically connected to the conductive heat emitting line, and a power part connected to the bus bar, and a manufacturing method thereof. 1. A heating element , comprising:a transparent substrate,an adhesive agent layer provided on at least one side of the transparent substrate,a conductive heat emitting line provided on the adhesive agent layer,a coating film capsulating the conductive heat emitting line and an upper side of the adhesive agent layer not covered by the heat emitting line,a bus bar electrically connected to the conductive heat emitting line, and a power part connected to the bus bar.2. The heating element according to claim 1 , wherein the adhesive agent layer laminates a metal thin film for forming the conductive heat emitting line on the transparent substrate.3. The heating element according to claim 1 , wherein a thickness of the conductive heat emitting line is 5 micrometers or more.4. The heating element according to claim 1 , wherein the conductive heat emitting line is provided so as to have a permeability deviation of 5% or less in respects to an arbitrary circle that has a diameter of 20 cm.5. The heating element according to claim 1 , wherein an opening ratio of the transparent substrate is 70% or more.6. The heating element according to claim 1 , wherein the conductive heat emitting line is provided in a pattern shape of a boundary shape of figures forming a Voronoi diagram or a boundary shape of figures formed of at least one triangle forming a Delaunay pattern.7. The heating element according to claim 1 , wherein a line width of the conductive heat ...

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Номер записи: 31
07-11-2013 дата публикации

Electric Heater Crushable Cores and Compacted Unitary Heater Device and Method of Making Such Devices

Номер: US20130292374A1
Автор: Crandell Walter
Принадлежит:

A crushable ceramic heater core for an electric heater device which has a cylinder-like body of crushable ceramic material and grooves along the periphery of the body, the grooves being key shaped and adapted to receive a conductive pin in a groove. The invention also includes an electric heater device where such a core has been wound with heater wire and the conductive pin has been inserted in a core groove in contact with the wire, and the wire wound core has been installed in a sheath which has been filed with electoral insulting material. The sheath and its contents are swaged to create a compacted unitary heater assembly. The invention also includes the process for making the wire wound grooved core having a conductive pin therein in contact with the wire winding, and a method for making a heating device having such a core and which has been compacted to a theoretical density. The heater assembly and the method may also include installation of temperature sensing devices. 1. A crushable ceramic heater core for an electric heater device comprising a cylinder-like body of crushable ceramic material , longitudinal grooves along a periphery of said body , said grooves being key shaped and adapted to receive a conductive pin therein.2. The crushable ceramic heater core recited in claim 1 , wherein said grooves have reduced entries.3. The crushable ceramic heater core recited in claim 2 , wherein said cores have portions spaced interiorly of said entries which are wider than at said entries.4. The crushable ceramic heater core recited in claim 1 , wherein said periphery is wound with conductive heater wire.5. The crushable ceramic heater core recited in claim 4 , wherein said heater wire is wound on said core substantially transverse to said grooves.6. The crushable ceramic heater core recited in claim 1 , wherein conductive pins are arranged one pin in one of said grooves claim 1 , and conductive heater wire is wound on said core.7. The crushable core recited in ...

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Номер записи: 32
14-11-2013 дата публикации

METHOD FOR MANUFACTURING A FLEXIBLE HEATER

Номер: US20130298385A1
Автор: CHOI Jae Sik, Granes Jean-Michel, Tardy Pierre-Francois
Принадлежит: INERGY AUTOMOTIVE SYSTEMS RESEARCH (Societe Anonyme)

Method for manufacturing a flexible heater comprising a resistive track enclosed in two sheets of electrically insulating plastic material, said track comprising electrical connections to which electrical wires are connected, the method comprising the steps of: —enclosing the resistive track in the two sheets of electrically insulating plastic material—connecting the electrical wires to the electrical connections of the resistive track—putting an open mould around the connection area—injecting a liquid casting formulation into said mould—curing said composition—removing the mould. 2. The method according to claim 1 , wherein the two sheets of electrically insulating plastic material are formed from a silicone composition.3. The method according to claim 2 , wherein the flexible heater comprises at least one stainless steel resistive track sandwiched between two silicone resin sheets.4. The method according to claim 1 , wherein the flexible heater comprises at least two resistive tracks which are interdigitated.5. The method according to claim 1 , wherein the flexible heater comprises at least one metal resistive track with perforations which are filled with the electrically insulating plastic material so as to interconnect the two sheets of electrically insulating plastic material.6. The method according to claim 5 , wherein the perforations have a diameter of less than 1 mm but at least equal to a surface tension of an acid used for etching a metallic foil.7. The method according to claim 5 , wherein a soldering area of the metal resistive track comprises the perforations.8. The method according to claim 1 , wherein the liquid casting formulation is a liquid silicone composition.9. The method according to claim 8 , wherein the liquid silicone composition is formed from at least two components.10. The method according to claim 1 , wherein the liquid casting formulation is injected in the mould with a pump.11. The method according to claim 1 , wherein the injecting ...

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Номер записи: 33
14-11-2013 дата публикации

Ceramic Multilayered Component and Method for Producing a Ceramic Multilayered Component

Номер: US20130300533A1
Автор: Bisplinghoff Gerhard, Hesse Christian, Kloiber Gerald
Принадлежит: EPCOS AG

A ceramic multilayered component which includes a layer stack having a plurality of ceramic layers. The multilayered component includes a first and a second connecting contact as well as a first and a second inner electrode, which are each arranged between two layers of the layer stack. The multilayered component includes a first and a second via electrode for electrically coupling the first connecting contact to the first inner electrode and for electrically coupling the second connecting contact to the second inner electrode. 113-. (canceled)14. A ceramic multilayered component , comprising:a layer stack comprising a plurality of ceramic layers:a first connection contact;a second connection contact;a first internal electrode and a second internal electrode, arranged between two layers of the layer stack;a first via electrode electrically coupling the first connection contact to the first internal electrode; anda second via electrode electrically coupling the second connection contact to the second internal electrode.15. The ceramic multilayered component according to claim 14 , wherein the first connection contact is arranged at a surface of the layer stack and the second connection contact is arranged at an opposite surface claim 14 , and wherein an area of the first connection contact is smaller than an area of the surface and wherein an area of the second connection contact is smaller than an area of the opposite surface.16. The ceramic multilayered component according to claim 14 , wherein the first and the second connection contacts are arranged at a common surface of the layer stack and wherein the area of the first and second connection contacts taken together is smaller than an area of the common surface.17. The ceramic multilayered component according to claim 14 , wherein the internal electrodes are each smaller in projection in a stacking direction of a last stack than the projection of the layer stack.18. The ceramic multilayered component according to ...

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Номер записи: 34
28-11-2013 дата публикации

CERAMIC HEATER AND MANUFACTURING METHOD THEREOF

Номер: US20130313244A1
Автор: MATSUI Kazuya, Watanabe Shindo
Принадлежит: NGK SPARK PLUG CO., LTD.

A ceramic heater including a columnar substrate and a heat generation resistor embedded in the substrate. A taper surface () having a contour L extending along an imaginary ellipse E is composed of a plurality of successively arranged curved surfaces which decrease in radius of curvature toward the forward end with respect to the direction of an axis P. The taper surface () is such that the distance between the end points M and M of the contour L is large in the direction of the axis P, and the angle between the axis P and a tangential line of the contour L on the side toward the forward end surface () is larger than the angle between the axis P and a tangential line of the contour L on the side toward the side circumferential surface (). 1. A ceramic heater comprising:a columnar substrate made of insulating ceramic and extending in a direction of an axis; anda heat generation resistor made of electrically conductive ceramic, embedded in the substrate, and generating heat upon supply of electricity thereto, the heat generation resistor having a heat generation portion disposed in a forward end portion of the substrate with respect to the direction of the axis and lead portions extending toward a rear end of the substrate from opposite ends of the heat generation portion, whereinthe forward end portion of the substrate has a taper portion formed such that the diameter of the taper portion decreases toward the forward end thereof with respect to the direction of the axis;the taper portion has an outer circumferential surface which is composed of a plurality of curved surfaces which bulge outward and have different radiuses of curvature, the curved surfaces being successively arranged in the direction of the axis such that the radius of curvature changes continuously; andof the plurality of curved surfaces, a forward curved surface formed on a forward side with respect to the direction of the axis is smaller in the radius of curvature than a rearward curved surface ...

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Номер записи: 35
05-12-2013 дата публикации

CHIP RESISTOR AND METHOD OF PRODUCING SAME

Номер: US20130321121A1
Автор: OHBAYASHI Takashi, Sakai Kazunori, SHIRAISHI Seigo
Принадлежит: Panasonic Corporation

An object of the disclosure is to provide a chip resistor without causing the disconnection in atmosphere of sulfidizing gas and without precipitating silver sulfide on its surface. 1. A chip resistor comprising:a substrate having a top surface;a resistor layer disposed on the top surface of the substrate;a pair of first upper electrode layers disposed on the top surface of the substrate and being electrically connected to the resistor layer at both sides of the resistor layer; anda pair of second upper electrode layers disposed on the pair of the first upper electrode layers and including between 75% by weight and 85% by weight (inclusive) of silver particles with an average particle diameter ranging from 0.3 μm to 2 μm, between 1% by weight and 10% by weight (inclusive) of carbon, and a resin.2. The chip resistor according to claim 1 , further comprising:a protecting layer disposed so as to cover the resistor layer and a part of the pair of the second upper electrode layers; anda side electrode layer disposed at the side of the substrate, the side electrode layer being electrically connected to the pair of the second upper electrode layers.3. The chip resistor according to claim 2 , further comprising:a plated layer disposed on the surfaces of the pair of the second upper electrode layers and the side electrode layer.4. A method for producing a chip resistor comprising the steps of:providing a pair of first electrode layers on a top surface of a substrate;providing a resistor layer between the pair of the first electrode layers, both sides of the resistor layer being electrically connected to the pair of the first electrode layers;providing a pair of second upper electrode layers on the pair of the first upper electrode layers, the pair of the second upper electrode layers including between 75% by weight and 85% by weight (inclusive) of silver particles with an average particle diameter ranging from 0.3 μm to 2 μm, between 1% by weight and 10% by weight (inclusive ...

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Номер записи: 36
19-12-2013 дата публикации

SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME

Номер: US20130335191A1
Автор: Akhtman Leonid, Belman Michael
Принадлежит: Vishay Intertechnology, Inc.

A chip resistor includes an insulating substrate, top terminal electrodes formed on top surface of the substrate using silver-based cermet, bottom electrodes, resistive element that is situated between the top terminal electrodes and overlaps them partially, an optional internal protective coating that covers resistive element completely or partially, an external protective coating that covers completely the internal protection coating and partially covers top terminal electrodes, a plated layer of nickel that covers face sides of the substrate, top and bottom electrodes, and overlaps partially external protective coating, finishing plated layer that covers nickel layer. The overlap of nickel layer and external protective layer possesses a sealing property because of metallization of the edges of external protective layer prior to the nickel plating process. 1. A chip resistor comprising:sulfuration-susceptible upper terminal electrodes on opposite sides of a resistive element formed on a side of an insulating substrate;an external non-conductive protective coating overlaying a least a portion of the resistive element;a uniform conducting metal plated layer covering opposite face sides of the insulating substrate, the upper sulfuration-susceptible terminal electrodes and edges of the external non-conductive protective coating that were made platable by a pre-applied metallization layer.2. The chip resistor of claim 1 , wherein the pre-applied metallization layer is applied by metallization of face sides of the insulating substrate and edges of the external non-conductive protective coating.3. The chip resistor of claim 1 , wherein the pre-applied metallization layer is formed by sputtering.4. The chip resistor of claim 1 , further comprising a second metal plated layer over the first metal plated layer.5. The chip resistor of further comprising overlapping the metal plated layer over a portion of the adjacent edges of the external non-conductive protective coating.6 ...

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Номер записи: 37
19-12-2013 дата публикации

THERMAL HEAD, PRINTER, AND METHOD OF MANUFACTURING THERMAL HEAD

Номер: US20130335500A1
Автор: KOROISHI Keitaro, MOROOKA Toshimitsu, SANBONGI Norimitsu
Принадлежит: SEIKO INSTRUMENTS INC.

A thermal head comprises: a support substrate; an upper substrate arranged on the support substrate on one surface side thereof in a laminated state; an intermediate layer which is arranged between the upper substrate and the support substrate to bond the upper substrate and the support substrate to each other, and which has one of a through hole and a concave portion to form a cavity portion between the upper substrate and the support substrate; and a heat generating resistor formed on a surface of the upper substrate on a side opposite to the support substrate at a position opposed to the cavity portion, wherein the upper substrate has a melting point lower than a melting point of the intermediate layer. 1. A thermal head comprising:a support substrate;an upper substrate arranged on the support substrate on one surface side thereof in a laminated state;an intermediate layer which is arranged between the upper substrate and the support substrate to bond the upper substrate and the support substrate to each other, and which has one of a through hole and a concave portion to form a cavity portion between the upper substrate and the support substrate; anda heat generating resistor formed on a surface of the upper substrate on a side opposite to the support substrate at a position opposed to the cavity portion,wherein the upper substrate has a melting point lower than a melting point of the intermediate layer.2. A thermal head according to claim 1 , whereinthe upper substrate is formed in a range which is larger than an opening area of the one of the through hole and the concave portion of the intermediate layer and which is smaller than an area of the one surface of the support substrate.3. A thermal head according to claim 2 , further comprising:any one of the above-mentioned thermal heads; anda pressure mechanism which delivers a thermal recording medium while pressing the thermal recording medium against the heat generating resistor of the thermal head.4. A thermal ...

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Номер записи: 38
19-12-2013 дата публикации

RESISTOR, METHOD OF ASSEMBLING THE SAME, AND SWITCHGEAR

Номер: US20130335887A1
Автор: MORII Hiroaki, Morita Ayumu, OKADA Naoya, SHIINA Akitaka, Tsuchiya Kenji, YAMAMOTO Mitsuaki, YANAGISAWA Takao
Принадлежит:

A resistor for suppressing magnetizing inrush current includes a container made of an insulating material and at least one resistive element housed in the container, the resistive element being connected to two bushings provided at the container, the outer surface of the container being coated with a conductive paint, and the paint being connected to the ground, thereby being able to be located between a cable and a switch, and being able to fix the outer surface thereof to a ground voltage level so that human contact safety is not impaired. 1. A resistor comprising:a container made of an insulating material; andat least one resistive element housed in the container,wherein the resistive element is connected to two bushings provided at the container;wherein an outer surface of the container is coated with a conductive paint; andwherein the paint is connected to a ground.2. The resistor according to claim 1 ,wherein the container is made of resin; andwherein at least one resistive element in a circular ring shape is housed in the container.3. The resistor according to claim 1 , wherein one of the two bushings is connected to a cable and the other bushing is connected to a switch.4. The resistor according to claim 1 ,wherein metal plates are located over and under the resistive element; andwherein the metal plates are connected to conductors of the bushings respectively.5. The resistor according to claim 2 ,wherein metal plates are located over and under the resistive element; andwherein the metal plates are connected to conductors of the bushings respectively.6. The resistor according to claim 3 ,wherein metal plates are located over and under the resistive element; andwherein the metal plates are connected to conductors of the bushings respectively.7. The resistor according to claim 4 ,wherein a spring is located over the metal plate located over the resistive element;wherein an insulating plug is located over the spring and a metal lid is located over the ...

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Номер записи: 39
19-12-2013 дата публикации

SEMICONDUCTOR PROCESS

Номер: US20130337622A1
Автор: Hwang Ching-Nan, Li Ching-I, Lin Chi-Heng, Lin Ger-Pin, Yang Chan-Lon, Yang Chun-Yao
Принадлежит: UNITED MICROELECTRONICS CORP.

A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating. 1. A semiconductor process , comprising:forming a polysilicon layer on a substrate;cryo-implanting the polysilicon layer with at least two of a plurality of species comprising a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120° C.; andperforming an asymmetric dual-side heating treatment to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.2. The semiconductor process according to claim 1 , wherein the power for the backside heating is greater than the power for the front-side heating.3. The semiconductor process according to claim 2 , wherein a power ratio of the front-side heating to the backside heating ranges between 0.1:1 and 0.5:1.4. The semiconductor process according to claim 3 , wherein the power ratio of the front-side heating to the backside heating is 0.2:1.5. A semiconductor process claim 3 , comprising:forming an isolation structure in a substrate;forming a polysilicon layer on the isolation structure; andcryo-implanting the polysilicon layer with at least two of a plurality of species comprising a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120° C.6. The semiconductor process according to claim 5 , wherein the step of cryo-implanting the polysilicon layer is performed with liquid nitrogen or at a temperature of −100° C.7. The semiconductor process according to claim 5 , wherein the third species comprises a boron species.8. The semiconductor process according to claim 5 , wherein the third species is cryo-implanted into the polysilicon layer after cryo-implanting the first species and ...

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Номер записи: 40
26-12-2013 дата публикации

HEATING ELEMENT FOR A COOKING APPARATUS

Номер: US20130340631A1
Автор: Blixt Per, Johansson Carl-Alvar
Принадлежит: JOHN BEAN TECHNOLOGIES AB

A heating element () for a cooking apparatus comprises a heating body () having a heat transfer loop () encased within the heating body (); and a housing () made of corrosion resistant steel. The housing () has a cooking side and side surfaces extending from the cooking side. The heating body () is disposed within the housing () for allowing the heat transfer from the heating body () to the housing ( 1. Heating element for a cooking apparatus , the heating element comprising:a heating body having a heat transfer loop encased within the heating body,a housing made of corrosion resistant steel, the housing having a cooking side and side surfaces extending from the cooking side,wherein the heating body is disposed within the housing for allowing heat transfer from the heating body to the housing.2. A heating element according to claim 1 , wherein the heating body is formed by casting and the heat transfer loop is embedded inside the heating body while casting the heating body.3. A heating element according to claim 2 , wherein the heat transfer loop comprises an electrical resistance heater.4. A heating element according to claim 2 , wherein the heat transfer loop comprises a channel adopted to carry a hot fluid such as hot oil claim 2 , hot water claim 2 , or steam.5. A heating element according to claim 2 , wherein the heating body is bolted inside the housing.6. A heating element according to claim 1 , wherein the heating body is arranged against the cooking side of the housing.7. A heating element according to claim 6 , wherein at least the cooking side of the housing is made of a heat resistant steel.8. A heating element according to claim 1 , wherein the heating body is made of one or more materials chosen from the group comprising aluminum claim 1 , zinc claim 1 , tin claim 1 , lead claim 1 , heat conducting granulate and thermal grease.9. A heating element according to claim 1 , wherein the heat transfer loop comprises an electrical resistance heater.10. A ...

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Номер записи: 41
26-12-2013 дата публикации

METHOD FOR MANUFACTURING A CHIP RESISTOR

Номер: US20130341301A1
Автор: Chen Full
Принадлежит: RALEC ELECTRONIC CORPORATION

In a method of manufacturing a chip resistor, a semi-product is formed by sandwiching an electric-insulating material layer between an electric-conducting material layer and a heat-dissipating material layer. Resistor sections arranged in an array on the semi-product are formed by forming longitudinal first slots and transverse second slots through the semi-product. Slits are formed on a first layer of each resistor section to form a resistor main body. A dividing slot is formed on a second layer of each resistor section. Two electrodes are formed to be electrically connected to opposite ends of the resistor main body. The resistor sections are trimmed from the semi-product to obtain the chip resistors. 1. A method for manufacturing a chip resistor , said method comprising the following steps of:a) sandwiching an electric-insulating material layer between an electric-conducting material layer and a heat-dissipating material layer to form a semi-product; forming a plurality of first slots through the semi-product, the first slots extending in a first direction and being arranged in a plurality of rows, each row including a plurality of adjacent pairs of the first slots, and', 'forming a plurality of second slots through the semi-product, the second slots extending in a second direction perpendicular to the first direction and being arranged in a plurality of columns, each adjacent pair of the second slots cooperating with a corresponding adjacent pair of the first slots to surround and define one of the resistor sections, each of the resistor sections having a first layer which is a segment of the electric-conducting material layer, a second layer which is a segment of the heat-dissipating material layer, and a sandwiched layer which is a segment of the electric-insulating material layer;, 'b) forming a plurality of resistor sections arranged in an array on the semi-product by'}c) for each resistor section, forming a plurality of slits on the second layer of the ...

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Номер записи: 42
26-12-2013 дата публикации

Metal Foil Provided with Electrically Resistive Film, and Method for Producing Same

Номер: US20130344322A1
Автор: Kurosawa Toshio
Принадлежит: JX NIPPON MINING & METALS CORPORATION

Provided are: a metal foil provided with an electrically resistive film comprising nickel, chromium, silicon and oxygen; the metal foil provided with an electrically resistive film having an oxygen concentration of 20 to 60 at %; the metal foil provided with an electrically resistive film having chromium (Cr) and silicon (Si) concentrations (at %) satisfying that Cr/(Cr+Si)×100 [%] is 73 to 79%; and the metal foil provided with an electrically resistive film having a nickel (Ni) concentration of 2 to 10 at %. 1. Metal foil provided with an electrically resistive film , wherein nickel is added to an electrically resistive oxide film comprising chromium , silicon and oxygen.2. The metal foil provided with an electrically resistive film according to claim 1 , wherein the electrically resistive film has an oxygen concentration of 20 to 60 at %.3. The metal foil provided with an electrically resistive film according to claim 2 , wherein the chromium (Cr) and silicon (Si) components of the electrically resistive film have concentrations (at %) satisfying Cr/(Cr+Si)×100 [%] is 73 to 79%.4. The metal foil provided with an electrically resistive film according to claim 3 , wherein the nickel (Ni) component of the electrically resistive film has a concentration of 2 to 10 at %.5. The metal foil provided with an electrically resistive film according to claim 4 , wherein the metal foil is a copper or copper alloy foil having a foil thickness of 5 to 35 μm.6. A method for producing metal foil provided with an electrically resistive film claim 4 , the method comprising the steps of forming an electrically resistive film on metal foil using a sputtering target claim 4 , in which chromium (Cr) claim 4 , silicon (Si) claim 4 , oxygen (O) and nickel (Ni) are contained claim 4 , the chromium (Cr) and the silicon (Si) concentrations (at %) satisfy Cr/(Cr+Si)×100 [%] is 73 to 79% claim 4 , the oxygen (O) concentration is 20 to 60 at % claim 4 , and the Ni concentration is 2 to 10%.7. ...

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Номер записи: 43
09-01-2014 дата публикации

RESISTANCE-FORMED SUBSTRATE AND METHOD FOR MANUFACTURING SAME

Номер: US20140008104A1
Автор: Ishitomi Hiroyuki, NAKAMURA Tadashi, SUGAYA YASUHIRO
Принадлежит: Panasonic Corporation

A resistance-formed substrate includes a first insulating layer, a first wiring formed on a first surface of the first insulating layer, a thin-film resistance layer formed on a second surface of the first insulating layer, and a first via-hole conductor. The first via-hole conductor penetrates through the first insulating layer, and is electrically connected to the first wiring and the thin-film resistance layer. The first via-hole conductor includes a metal part including a low-melting point metal and a high-melting point metal, and a paste resin part. The low-melting point metal includes tin and bismuth, and has a melting point of 300° C. or lower. The high-melting point metal includes at least one of copper and silver, and has a melting point of 900° C. or higher. The first via-hole conductor is in contact with the thin-film resistance layer at both the paste resin part and the metal part. 1. A resistance-formed substrate comprising:a first insulating layer;a first wiring formed on a first surface of the first insulating layer;a thin-film resistance layer formed on a second surface of the first insulating layer and including nickel as a main component; anda first via-hole conductor penetrating through the first insulating layer, and electrically connected to the first wiring and the thin-film resistance layer, [ a low-melting point metal including tin and bismuth and having a melting point of 300° C. or lower, and', 'a high-melting point metal including at least one of copper and silver and having a melting point of 900° C. or higher; and, 'a metal part including'}, 'a paste resin part, and, 'wherein the first via-hole conductor includeswherein the first via-hole conductor is brought into contact with the thin-film resistance layer at both the paste resin part and the metal part.2. The resistance-formed substrate of claim 1 , further comprising:a second wiring coupled to the first via-hole conductor via the thin-film resistance layer on the second surface of the ...

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Номер записи: 44
09-01-2014 дата публикации

HIGH-NITROGEN CONTENT METAL RESISTOR AND METHOD OF FORMING SAME

Номер: US20140008764A1
Автор: EDELSTEIN Daniel C., Yang Chih-Chao
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A thin film metal resistor is provided that includes an in-situ formed metal nitride layer formed in a lower region of a metal nitride layer. The in-situ formed metal nitride layer, together with the overlying metal nitride layer, from a thin film metal resistor which has a nitrogen content that is greater than 60 atomic % nitrogen. The in-situ formed metal nitride layer is present on a nitrogen enriched dielectric surface layer. The presence of the in-situ formed metal nitride layer in the lower region of the metal nitride layer provides a two-component metal resistor having greater than 60 atomic % nitrogen therein. 1. A metal resistor structure comprising:a dielectric material layer having a nitrogen enriched dielectric surface layer located in an upper region thereof; anda metal nitride layer located atop said nitrogen enriched dielectric surface layer, wherein said metal nitride layer is separated from said nitrogen enriched dielectric surface layer of said dielectric material layer by an in-situ formed metal nitride layer.2. The metal resistor structure of claim 1 , wherein said metal nitride layer and said in-situ formed metal nitride layer comprise a bilayer resistor with a distinct interface located therebetween.3. The metal resistor structure of claim 1 , wherein said metal nitride layer and said in-situ formed metal nitride layer provide a resistor having a graded nitrogen content.4. The metal resistor structure of claim 1 , wherein said metal nitride layer and said in-situ formed metal nitride layer provide a resistor having greater than 60 atomic % nitrogen located therein.5. The metal resistor structure of claim 1 , wherein said metal nitride layer and said in-situ formed metal nitride layer are components of a patterned resistor structure claim 1 , and wherein another dielectric material layer is located on exposed portions of said nitrogen enriched dielectric surface layer and said patterned resistor structure claim 1 , and further wherein said ...

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Номер записи: 45
23-01-2014 дата публикации

SENSOR FOR PRESSURE MEASUREMENTS

Номер: US20140020473A1
Автор: Giovannone Juri, Ricotti Giulio
Принадлежит:

A sensor for pressure measurement may include a fabric support, an electrically conductive structure including tracks on the fabric support having resistance variations in response to deformations thereof, and a processor coupled to the electrically conductive structure and configured to sense resistance values of respective tracks of the electrically conductive structure and to provide a signal representative of a pressure difference across opposite faces of the fabric support. 117-. (canceled)18. A sensor for pressure measurement comprising:a fabric support;at least one electrically conductive structure comprising a plurality of tracks on said fabric support having resistance variations in response to deformations thereof; anda processor coupled to said at least one electrically conductive structure and configured to sense resistance values of respective tracks of said at least one electrically conductive structure to provide a signal representative of a pressure difference across opposite faces of said fabric support.19. The sensor according to wherein said plurality of tracks comprises a reference track extending in a first direction claim 18 , and a plurality of sense tracks extending from said reference track in a comb-like pattern in a second direction.20. The sensor according to wherein said processor comprises a plurality of terminals; wherein each sense track has an end coupled to a respective terminal of said processor; and further comprising a plurality of connection lines coupling the ends of said plurality of sense tracks to said plurality of terminals.21. The sensor according to wherein said plurality of tracks comprises:a plurality of connection tracks defining a plurality of terminals; anda plurality of sense tracks configured to, with a pressure difference across the opposite faces of said fabric support in an operation interval, cause, between said plurality of terminals respective resistance variations falling in respective distinct and non- ...

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Номер записи: 46
30-01-2014 дата публикации

TRANSPARENT PANE WITH AN ELECTRICAL HEATING LAYER, AND PRODUCTION PROCESS THEREFOR

Номер: US20140027434A1
Автор: Lisinski Susanne, Reul Bernhard, SCHALL Guenther, Velden Sabine
Принадлежит: SAINT-GOBAIN GLASS FRANCE

A transparent pane with an electrical heating layer, which extends at least over a part of the pane surface and can be electrically connected to a power source via connection means is described. The transparent pane has connection means having a strip-shaped first bus bar and a strip-shaped second bus bar, which are electrically conductively connected directly to the heating layer over the entire strip length. A method for producing such a transparent pane is also described. In the method the zone heating element is electrically conductively connected directly to at least one first flat ribbon cable and to at least one second flat ribbon cable in an electrical parallel circuit with respect to the heating field. 1. A transparent pane comprising:an electrical heating layer, which extends at least over a part of a transparent pane surface and can be electrically connected via connection means to a power source, wherein the connection means comprise a strip-shaped first bus bar and a strip-shaped second bus bar, which, in each case, are electrically conductively connected directly to a heating layer over an entire strip length such that after application of a supply voltage, a heating current flows over a heating field formed by the heating layer, wherein the strip-shaped first bus bar is electrically conductively connected in direct contact to at least one first flat ribbon cable and the strip-shaped second bus bar is electrically conductively connected in direct contact to at least one second flat ribbon cable, andat least one heating-field-free pane zone, in which at least one electrical zone heating element is disposed, which has an ohmic resistance such that the heating-field-free pane zone is heatable by applying a supply voltage, wherein the electrical zone heating element is electrically conductively connected in direct contact to the at least one first flat ribbon cable and to the at least one second flat ribbon cable in an electrical parallel circuit with ...

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Номер записи: 47
06-02-2014 дата публикации

ELECTRIC HEATER FOR INTEGRATION INTO AN AIRCRAFT ACOUSTIC PANEL

Номер: US20140034414A1
Автор: Botura Galdermir Cezar, Burkett Brian Bobby, Hubert Claude Marc, OLSON Timothy Robert, Sweet David Bert, Zecca Joseph Christopher
Принадлежит:

An electric heater () for integration into an acoustic panel () having sound-penetrating pores () communicating with a sound-canceling medium. The heater () includes an electrically conductive layer () with resistance-setting apertures () filled with sealant (). Openings (), which contribute to the sound-penetrating pores (), extend through the sealant-filled apertures (). The acoustic panel () can be assimilated into an aircraft component, such as a nacelle inlet lip, which requires both noise-reducing and ice-protecting features. 1. An electric heater for integration into an acoustic panel having sound-penetrating pores; said electric heater comprising:an electrically conductive layer,resistance-setting apertures extending through the conductive layer,sealant filling at least some of the resistance-setting apertures, andsound-penetrating openings extending through at least some of the sealant-filled apertures;wherein sealant laterally surrounds each sound-conveying opening.2. An electric heater as set forth in claim 1 , wherein the sealant-filled apertures have just one sound-conveying opening extending therethrough.3. An electric heater as set forth in claim 1 , wherein the sealant-filled apertures have a plurality of sound-conveying opening extending therethrough.4. An electric heater as set forth in claim 1 , comprising:a breezeside insulative layer located breezeside of the conductive layer, andsound-penetrating openings extending through the breezeside insulative layer.5. An electric heater as set forth in claim 4 , comprising:apertures in the breezeside insulative layer which are aligned with the resistance-setting apertures in the conductive layer, andsealant in the apertures which are aligned with the sealant-filled apertures of the conductive layer;wherein the sound-penetrating openings in the breezeside insulative layer extend through its sealant-filled apertures.6. An electric heater as set forth in claim 5 , wherein the sealant in the apertures of the ...

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Номер записи: 48
06-02-2014 дата публикации

CARBON NANOTUBE THIN FILM LAMINATE RESISTIVE HEATER

Номер: US20140034633A1
Автор: Burton Brett R., Feier Ioan I., Heintz Amy M., Lastrapes Timothy J., Mitchell Katherine P., Muszynski Beth
Принадлежит: BATTELLE MEMORIAL INSTITUTE

Laminated resistive heaters comprising a carbon nanotube layer are described. The invention also includes methods of making laminated resistive heaters and applications using the resistive heaters. 1. A laminated resistive heater , comprising: a polymeric substrate , a CNT resistive heating layer having an interior that is substantially polymer-free disposed on the substrate , first and second electrical leads connected to the CNT layer , a protective layer disposed on a side of the CNT layer opposite the side facing the substrate , and a psa disposed on a side of the substrate opposite the side on which the CNT layer is disposed.2. The laminated resistive heater of wherein the psa is directly disposed on the substrate.3. The laminated resistive heater of wherein the CNT layer comprises hyaluronic acid in an amount less than 50 weight % of the CNT layer including additives.4. The laminated resistive heater of wherein the protective layer is polyurethane.5. The laminated resistive heater of wherein the electrical leads are printed on the substrate.61. The laminated resistive heater of claim wherein the substrate is a grooved substrate having peaks and troughs claim 1 , and wherein the CNT layer is disposed in the troughs and not on the peaks.7. The laminated resistive heater of wherein the peaks are directly bonded to the protective layer.8. The laminated resistive heater of wherein the protective layer has a thickness of 150 μm or less.9. The laminated resistive heater of wherein the substrate comprises a polyether imide.10. The laminated resistive heater of wherein the CNT resistive heating layer is arranged in a plurality of separated rows disposed on the polymeric substrate.11. A laminated resistive heater claim 1 , comprising: a polymeric substrate claim 1 , a CNT resistive heating layer arranged in a plurality of separated rows disposed on the polymeric substrate claim 1 , first and second electrical leads connected to the CNT layer claim 1 , a protective layer ...

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Номер записи: 49
06-02-2014 дата публикации

OVER-CURRENT PROTECTION DEVICE AND METHOD OF MAKING THE SAME

Номер: US20140035719A1
Автор: Chen Kuo Hsun, LEE Wen Feng, Lu Ming Hsun, SHA YI AN, TSENG Chun Teng
Принадлежит: POLYTRONICS TECHNOLOGY CORP.

An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PIC devices is less than 0.7 mm. 1. An over-current protection device , comprising:at least one PTC device of a thickness less than around 0.4 mm, the PTC device comprising a first electrically conductive member, a second electrically conductive member and a PTC material layer laminated between the first and second electrically conductive members;a first electrode electrically connected to the first electrically conductive member;a second electrode electrically connected to the second electrically conductive member; anda first insulating layer disposed on the first electrically conductive member and having a thickness between around 10 μm and 65 μm;wherein the over-current protection device is a stack structure extending along a first direction, and comprises at least one bole extending along a second direction substantially perpendicular to the first direction, a value of as covered area of the hole divided by an area of the form factor of the over-current protection device is equal to or greater than 2%, and a value of the thickness of the over-current protection device divided by the number ...

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Номер записи: 50
13-02-2014 дата публикации

METHOD FOR MANUFACTURING MULTILAYER CERAMIC SUBSTRATE AND COMPOSITE SHEET

Номер: US20140041912A1
Автор: KISHIDA Kazuo, OTSUKA Yusuke, TAKADA Takahiro
Принадлежит: MURATA MANUFACTURING CO., LTD.

A high-quality resistor pattern and conductor pattern is formed on an external surface of a multilayer ceramic substrate by an ink jet method. A composite sheet including a first ceramic green layer and a shrinkage-retardant layer is formed, and a resistor pattern and a conductor pattern are formed on the first ceramic green layer of the composite sheet by an ink jet method. Subsequently, a plurality of second ceramic green layers are stacked with the composite sheet such that the shrinkage-retardant layer of the composite sheet defines an outermost layer, thus forming a multilayer composite including an unfired multilayer ceramic substrate and the shrinkage-retardant layer. Then, the multilayer composite is fired, and the shrinkage-retardant layer is removed to obtain a sintered multilayer ceramic substrate. 1. A pattern-including composite sheet comprising:a ceramic green layer including a low-temperature co-fired ceramic material;a shrinkage-retardant layer disposed on the ceramic green layer and containing a sintering-resistant ceramic powder that is substantially not sintered under a condition for sintering the low-temperature co-fired ceramic material; anda resistor pattern and/or conductor pattern formed on the ceramic green layer by an ink jet method using a resistor ink and/or a conductor ink.2. The pattern-including composite sheet according to claim 1 , wherein the ceramic green layer has a voidage of about 30% or more.3. The pattern-including composite sheet according to claim 1 , wherein the ceramic green layer contains a binder claim 1 , and the binder has a solubility of about 14 g or less in the resistor ink and/or the conductor ink.41. The pattern-including composite sheet according to claim claim 1 , wherein the ceramic green layer has a different color than that of the shrinkage-retardant layer.5. A composite sheet comprising:a ceramic green layer containing a low-temperature co-fired ceramic material; anda shrinkage-retardant layer disposed on ...

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Номер записи: 51
20-02-2014 дата публикации

CHIP RESISTOR AND METHOD OF MANUFACTURING THE SAME

Номер: US20140049358A1
Автор: KANG Heun Ku, KIM Jung II, Kim Yong Min, KIM Young Tae, TANAKA Ichiro
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

There are provided a chip resistor and a method of manufacturing the same. The chip resistor includes a ceramic substrate; an adhesion portion formed on a surface of the ceramic substrate; and a resistor formed on the adhesion portion, wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni). 1. A chip resistor , comprising:a ceramic substrate;an adhesion portion formed on a surface of the ceramic substrate; anda resistor formed on the adhesion portion,wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni).2. The chip resistor of claim 1 , wherein the resistor includes at least one of copper-nickel (Cu—Ni) claim 1 , copper-nickel-manganese (Cu—Ni—Mn) claim 1 , and nickel-chromium (Ni—Cr).3. The chip resistor of claim 1 , further comprising an electrode formed on a surface of the resistor.4. The chip resistor of claim 3 , further comprising an additional electrode formed on a surface of the electrode to precisely adjust resistance.5. The chip resistor of claim 3 , further comprising a protective layer partially covering the resistor and the electrode.6. A method of manufacturing a chip resistor claim 3 , the method comprising:preparing a ceramic substrate;printing an adhesive paste including at least one of copper (Cu),nickel (Ni),andcopper-nickel (Cu—Ni) on a surface of the ceramic substrate; andforming a resistor on an upper surface of the adhesive paste.7. The method of claim 6 , wherein the resistor includes at least one of copper-nickel (Cu—Ni) claim 6 , copper-nickel-manganese (Cu—Ni—Mn) claim 6 , and nickel-chromium (Ni—Cr).8. The method of claim 6 , further comprising forming an electrode by printing an electrode paste on a surface of the resistor.9. The method of claim 8 , further comprising firing the electrode.10. The method of claim 9 , wherein the firing of the electrode is performed at a temperature from 800° C. to 1400° C.11. The method of claim 9 , ...

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Номер записи: 52
27-02-2014 дата публикации

CHIP RESISTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Номер: US20140055228A1
Автор: Wang Wan-Ping
Принадлежит: RALEC ELECTRONIC CORPORATION

A chip resistor device includes an insulating substrate, two indented patterns, and a resistor unit. The insulating substrate has opposite first and second surfaces. The first surface has two opposite edges and two electrode forming regions adjacent to the two opposite edges, respectively. The indented patterns are respectively formed in the electrode forming regions of the first surface and indented from the first surface. The resistor unit includes two contact electrodes respectively formed on the electrode forming regions of the first surface and filled into the indented patterns, and a resistor formed on the first surface between the two contact electrodes and electrically contacting the contact electrodes. 1. A chip resistor device , comprising:an insulating substrate having a first surface and a second surface opposite to said first surface, said first surface having two opposite edges and two electrode forming regions adjacent to said two opposite edges respectively;two indented patterns respectively formed in said electrode forming regions of said first surface and indented from said first surface; and two contact electrodes respectively formed on said electrode forming regions of said first surface and filled into said indented patterns; and', 'a resistor formed on said first surface between said two contact electrodes and electrically contacting said contact electrodes., 'a resistor unit including2. The chip resistor device of claim 1 , wherein each of said indented patterns includes at least one notch.3. The chip resistor device of claim 2 , wherein said notch of each of said indented patterns is formed using a diamond blade or laser.4. The chip resistor device of claim 1 , further comprising an insulating protection layer which covers said resistors.5. A method for fabricating a chip resistor device claim 1 , comprising the steps of:(a) defining a plurality of substrates on an insulating film by a plurality of spaced-apart and interlaced splitting ...

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Номер записи: 53
06-03-2014 дата публикации

METHOD AND APPARATUS FOR MANUFACTURING METAL PLATE CHIP RESISTORS

Номер: US20140059838A1
Автор: Hirano Tatsuki, TANAKA Kazuo
Принадлежит: KAMAYA ELECTRIC CO., LTD.

The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus for manufacturing metal plate chip resistors including cutting mold for cutting intermediate product strip transversely to obtain worked product chip, ohm meter for measuring the resistance of the worked product chip, control device having a calculating part for performing a calculation using the resistance measured by the ohm meter to work out a width in which the strip is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjustor for making an adjustment so that the strip is to be cut transversely in the width obtained from the calculating part. 1. A method for manufacturing metal plate chip resistors comprising the steps of:cutting a resistive metal plate strip transversely in a predetermined width corresponding to a width of one chip resistor to obtain a resistive metal plate chip, said resistive metal plate strip having been provided with an electrode film along each longitudinal edge and a protective film between the electrode films along the edges,measuring a resistance of said resistive metal plate chip, andperforming a calculation using a measured value to work out a cutting width in which said resistive metal plate strip is to be cut transversely in a next cutting step so as to obtain a resistive metal plate chip of a desired resistance,wherein said method is characterized by the further steps of:cutting said resistive metal plate strip transversely in said cutting width obtained from said step of performing a calculation,measuring a resistance of a resulting resistive metal plate chip, andperforming a calculation using a measured resistance to work out a cutting width in which said resistive metal plate strip is to be cut transversely in a next cutting step so as ...

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Номер записи: 54
13-03-2014 дата публикации

METHOD FOR MANUFACTURING ELECTRIC FILM BODY

Номер: US20140072780A1
Автор: OTABE Noboru, SUGAI Takayasu
Принадлежит: KABUSHIKI KAISHA NIHON MICRONICS

A method for manufacturing an electric film body is made by forming a film body to have a shape in accordance with a desired electric characteristic and includes a film forming process for forming an electric film body on a board layer, an electric characteristic measuring process for measuring an electric characteristic in a surface of the electric film body formed in the film forming process, an electric film body shape setting process for setting a shape of the electric film body based on the electric characteristic measured in the electric characteristic measuring process, and an electric film body forming process for forming the electric film body formed in the shape set in the electric film body shape setting process. 1. A method for manufacturing an electric film body made by forming a film body to have a shape in accordance with a desired electric characteristic , comprising:a film forming process for forming an electric film body on a board layer;an electric characteristic measuring process for measuring an electric characteristic in a surface of the electric film body formed in the film forming process;an electric film body shape setting process for setting a shape of the electric film body based on the electric characteristic measured in the electric characteristic measuring process; andan electric film body forming process for forming the electric film body formed in the shape set in the electric film body shape setting process.2. The method for manufacturing an electric film body according to claim 1 , wherein claim 1 , in the film forming process claim 1 , the electric film body on the board layer is formed on an entire surface of the board layer claim 1 ,wherein, in the electric characteristic measuring process, the electric characteristic over an entire area in the electric film body is measured,wherein, in the electric film body shape setting process, the shape of the electric film body is set in accordance with the electric characteristic at an ...

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Номер записи: 55
27-03-2014 дата публикации

HEATING ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: US20140083991A1
Автор: Choi Hyeon, Kim Ki-Hwan, Kim Sujin
Принадлежит: LG CHEM, LTD.

The present specification relates to a heating element in which a heating value for each region is controlled or a heating element in which the heating value for each region is controlled and which is inconspicuous, and a method for manufacturing the same. 1. A heating element comprising:a substrate;a conductive heating pattern provided on the substrate; andtwo bus bars provided so as to apply voltage to both ends of the conductive heating pattern, respectively,wherein the conductive heating pattern comprises a border form of a closed figure, and an average area of the closed figure is controlled in at least some regions of the conductive heating pattern according to a distance from the bus bar or along a longitudinal direction of the bus bar.2. The heating element of claim 1 , wherein the conductive heating pattern comprises at least two regions having different average areas of the closed figure per unit area.3. The heating element of claim 2 , wherein the conductive heating pattern comprises at least three regions having different average areas of the closed figure per unit area.4. The heating element of claim 2 , wherein a ratio of the average area of the closed figure per unit area among the regions is a value of 1.1 or more and less than 4.5. The heating element of claim 2 , wherein a difference in aperture ratio between the regions is 5% or less.6. The heating element of claim 5 , wherein the aperture ratio for each region is 90% or more.7. The heating element of claim 2 , wherein the region comprises part ‘A’ and part ‘B’ in accordance with Article 109 of the rule on the vehicle safety standards.8. The heating element of claim 1 , wherein a length of each of the lines constituting the border of the closed figure is from 100 μm to 800 μm claim 1 , and a line width thereof is from 0.1 μm to 30 μm.9. The heating element of claim 1 , wherein the closed figure has a form in which an average distance between lines in a longitudinal direction is longer than an ...

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Номер записи: 56
01-01-2015 дата публикации

ELECTRIC CARTRIDGE TYPE HEATER AND METHOD FOR MANUFACTURING SAME

Номер: US20150001206A1
Автор: SCHLIPF Andreas
Принадлежит:

An electric cartridge type heater () has at least one the tubular metallic jacket (), at least one electric heat conductor () arranged in the interior space of the tubular metallic jacket with two ends for electrically contacting the electric heat conductor, wherein the at least one electric heat conductor is electrically isolated from the tubular metallic jacket by an electrically insulating material () arranged in the interior space of the tubular metallic jacket (). The electric heat conductor is self-supporting. A method is also provided for manufacturing such an electric cartridge type heater.

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Номер записи: 57
05-01-2017 дата публикации

FREQUENCY-DEPENDENT RESISTOR AND CIRCUITRY EMPLOYING THE SAME

Номер: US20170004909A1
Автор: Burger Kerry, Wright Peter V.
Принадлежит:

A frequency-dependent resistor and circuitry employing the same are provided. In some embodiments, a resistor includes a substrate, an input port, an output port, and a conductive trace on the substrate between the input port and the output port. A resistance between the input port and the output port for a low frequency signal is at least five times lower than the resistance between the input port and the output port for an RF signal and the ratio of the frequencies of the RF signal to the low frequency signal is at least fifty. Circuitry including a transistor adapted to selectively couple the input to the output in response to a control signal provided via a resistor with resistance for a low frequency signal at least five times lower than resistance for an RF signal will have a reduced switching time while still isolating the RF signal. 1. A resistor comprising:a substrate;an input port;an output port; anda conductive trace on the substrate between the input port and the output port;wherein a resistance between the input port and the output port for a low frequency signal is at least five times lower than the resistance between the input port and the output port for a radio frequency (RF) signal and the ratio of the frequencies of the RF signal to the low frequency signal is at least fifty.2. The resistor of wherein the resistance between the input port and the output port for a signal at or below 10 MHz is at most 10 kilohms (kΩ) claim 1 , and the resistance between the input port and the output port for a signal at or above 1 gigahertz (GHz) is at least 100 kn.3. The resistor of wherein the conductive trace has a relative magnetic permeability of at least 100.4. The resistor of wherein the conductive trace has a relative magnetic permeability of at least 1000.5. The resistor of wherein the conductive trace comprises at least one of the group consisting of Iron claim 1 , Cobalt claim 1 , and Nickel.6. The resistor of wherein the conductive trace comprises ...

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Номер записи: 58
04-01-2018 дата публикации

METHOD OF MANUFACTURING INTERCONNECT LAYER AND SEMICONDUCTOR DEVICE WHICH INCLUDES INTERCONNECT LAYER

Номер: US20180006017A1
Автор: LEE Shun-Yi, WANG Chin-Shan
Принадлежит:

A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments. 1. A semiconductor device comprising: first contacts, extending through the ILD structure, electrically connected to corresponding first components of the semiconductor device, the first components being located in a floor structure underlying the ILD structure;', 'the at least one second component being located within the ILD structure and spaced from a surface of the ILD structure, in a direction perpendicular to a plane of the surface of the ILD structure, a distance which is less than a thickness of the ILD structure; and', 'at least one second component of the semiconductor device,'}, 'second contacts directly contacting corresponding first regions of the at least one second component; and, 'an inter-layer dielectric (ILD) structure including first metallization segments which directly contact corresponding ones of the first contacts; and', 'second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width ...

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Номер записи: 59
02-01-2020 дата публикации

CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME

Номер: US20200005972A1
Автор: IMAHASHI Wataru, SHINOURA Takanori
Принадлежит:

A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode. 132-. (canceled)33. A chip resistor comprising:a substrate including a first surface, a second surface opposite to the first surface, and a side surface disposed between the first surface and the second surface in a thickness direction of the substrate, the first surface including a first end part and a second end part that are spaced apart from each other in a first direction in plan view;an upper electrode located on the first end part of the first surface;a resistor element located on the first surface of the substrate and electrically connected to the upper electrode;a first insulating layer covering the upper electrode and the resistor element;a second insulating layer formed on the first insulating layer;a protective layer formed on the upper electrode and including a portion located between the first insulating layer and the second insulating layer in the thickness direction; anda side electrode electrically connected to the upper electrode and including a first portion and a second portion, the first portion being located on the side surface of the substrate, the ...

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Номер записи: 60
03-01-2019 дата публикации

PACKAGE INTEGRATED PASSIVES

Номер: US20190006457A1
Автор: Aleksov Aleksandar, DARMAWIKARTA Kristof, Gaan Sandeep, MAY ROBERT ALAN
Принадлежит:

A semiconductor device may include a plurality of layers of a substrate. A die may be coupled to at least one of the plurality of layers of the substrate. A passive electrical component may be integrally formed within the layers of the substrate. The passive electrical component may be a resistor or a capacitor. One or more conductors may be configured to allow electrical communication between the passive electrical component and the die. The one or more conductors may be integrally formed within the plurality of layers of the substrate. 1. A semiconductor device , comprising:a plurality of layers of a substrate;a die coupled to at least one of the plurality of layers of the substrate;a passive electrical component integrally formed within the layers of the substrate; andone or more conductors configured to allow electrical communication between the passive electrical component and the die, wherein the one or more conductors are integrally formed within the plurality of layers of the substrate.2. The semiconductor package of claim 1 , wherein the passive component is in electrical communication with an external device.3. The semiconductor package of claim 1 , wherein the passive electrical component is included in a plurality of passive electrical components.4. The semiconductor package of claim 1 , wherein the passive component is a resistor.5. The semiconductor package of claim 4 , wherein the resistor includes:a resistive component formed from a portion of a layer of the substrate; anda first electrode and a second electrode coupled to the resistive component such that the first and second electrodes are in electrical communication through the resistive component.6. The semiconductor package of claim 5 , wherein the layer of the substrate is a first layer of the substrate and further comprising a second layer of the substrate coupled to the first layer of the substrate claim 5 , the resistive component claim 5 , and the first and second electrodes claim 5 , ...

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Номер записи: 61
03-01-2019 дата публикации

METHOD FOR THE MANUFACTURE OF A CORRELATED ELECTRON MATERIAL DEVICE

Номер: US20190006588A1
Автор: Celinska Jolanta Bozena, Paz de Araujo Carlos Alberto, Shifren Lucian
Принадлежит:

Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal. 1. A method for the manufacture of a correlated electron material (CEM) device comprising forming a CEM thin film of a correlated electron material having a predetermined electrical impedance when the CEM device is in its relatively conductive (low impedance) state , wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal to impart the predetermined electrical impedance , and wherein the predetermined electrical impedance is selected to match a conductivity of the CEM device with a transductance of one or more in-series field effect transistors.2. The method according to claim 1 , comprising forming the CEM thin film by a chemical vapour deposition claim 1 , such as an atomic layer deposition.3. (canceled)4. The method according to claim 1 , comprising forming the CEM thin film with an electrical conductivity between 10S/m and 10S/m.5. The method according to claim 1 , comprising forming the CEM thin film with cross-sectional area between 25 nmand 500 nm.6. The method according to claim 1 , wherein the back-donating ligand for the metal is selected from the group of back-donating ligands consisting of carbonyl claim 1 , nitrosyl claim 1 , isocyanide claim 1 , dioxygen claim 1 , dihydrogen claim 1 , alkene claim 1 , alkyne or phosphinyl.7. The method according to claim 1 , wherein the back-donating ligand for the metal ...

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Номер записи: 62
07-01-2016 дата публикации

METHOD FOR FABRICATING PRINTED ELECTRONICS

Номер: US20160007473A1
Автор: Culp Slade R., Dardona Sameh, Schmidt Wayde R.
Принадлежит: HAMILTON SUNDSTRAND CORPORATION

A method for fabricating printed electronics and optical components includes printing a trace of electrically conductive, semiconductive or insulating material on a substrate and shrinking the substrate to a target size. The material can include an ink, solution, dispersion, powder, slurry, paste or the like. The step of shrinking can include heating the substrate at a predetermined temperature based on properties of the substrate. The step of shrinking can also include heating the substrate for a predetermined duration based on properties of the substrate. The step of shrinking can also include releasing an external electrical potential used to stretch the substrate during printing. For example, the substrate may decrease in area by at least fifty percent during heating. 1. A method for fabricating printed electronics:printing a trace of electrically conductive, semiconductive, or insulating material on a substrate; andshrinking the substrate to a target size.2. The method of claim 1 , wherein the step of shrinking includes heating the substrate at a predetermined temperature based on properties of the substrate.3. The method of claim 1 , wherein the step of shrinking includes heating the substrate for a predetermined duration based on properties of the substrate.4. The method of claim 1 , wherein the step of shrinking includes initially stretching the substrate by an external electric potential and removing the external electric potential to shrink the substrate.5. The method of claim 1 , wherein the substrate is biaxially stretched.6. The method of claim 1 , wherein the substrate is selected from the group consisting of polystyrene claim 1 , thermoplastics claim 1 , neoprene claim 1 , silicone claim 1 , and polyvinylchloride (PVC).7. The method of claim 1 , wherein the substrate is prestrained.8. The method of claim 1 , wherein the substrate decreases in area by at least fifty percent during heating.9. An electrical component manufactured by the process ...

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Номер записи: 63
08-01-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR LOW RESISTIVE THIN FILM RESISTOR INTERCONNECT

Номер: US20150008560A1
Автор: DIRNECKER Christoph Andreas Othmar, OLSEN Leif Christian
Принадлежит:

The invention relates to a semiconductor device and a method of manufacturing an electronic device. A first conductive layer (first metal interconnect layer) is deposited. There is an insulating layer (first intermetal dielectric) layer deposited. A resistive layer is deposited on top of the insulating layer and structured in order to serve as a thin film resistor. A second insulating layer (second intermetal dielectric) is then deposited on top of the resistive layer. A first opening is etched into the insulating layers (first and second intermetal dielectric) down to the first conductive layer. A second opening is etched into the insulating layers (first and second intermetal dielectrics) down to the first conductive layer. A cross-sectional plane of the second opening is arranged such that it at least partially overlaps the resistive layer of the thin film resistor in a first direction. 1. An electronic device comprising:a first conductive layer;a first intermetal dielectric layer on top of the first conductive layer;a resistive layer of a thin film resistor on top of the first intermetal dielectric;a second intermetal dielectric layer on top of the resistive layer;a second conductive layer on top of the second intermetal dielectric;a first VIA through the second intermetal dielectric and the first intermetal dielectric layer for electrically connecting the first conductive layer and the second conductive layer; anda second VIA through the second intermetal dielectric layer and the first intermetal dielectric down to the first conductive layer, wherein the second VIA partially overlaps the resistive layer of the thin film resistor in at least a first dimension to electrically connect the thin film resistor to the first conductive layer and the second conductive layer.2. The electronic device according to claim 1 , wherein the resistive layer of the thin film resistor has a substantially rectangular shape and the partial overlap of the second VIA extends beyond a ...

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Номер записи: 64
04-01-2018 дата публикации

METHOD OF MAKING AN ELECTRONIC DEVICE HAVING A THIN FILM RESISTOR FORMED ON AN LCP SOLDER MASK AND RELATED DEVICES

Номер: US20180007797A1
Автор: JR. Louis Joseph, Rendek
Принадлежит:

A method of making an electronic device may include forming at least one circuit layer that includes solder pads on a substrate and forming at least one liquid crystal polymer (LCP) solder mask having mask openings therein. The method may also include forming at least one thin film resistor on the LCP solder mask and coupling the at least one LCP solder mask to the substrate so that the at least one thin film resistor is coupled to the at least one circuit layer and so that the solder pads are aligned with the mask openings. 122-. (canceled)23. A method of making an electronic device comprising:forming a pair of circuit layers each comprising a plurality of solder pads on opposing major surfaces of a liquid crystal polymer (LCP) substrate;forming a pair of LCP solder masks each having opposing first and second major surfaces and a plurality of mask openings extending therebetween;forming at least one thin film resistor directly on the first major surface of each of the pair of the LCP solder masks; andcoupling each of the pair of LCP solder masks to the opposing major surfaces of the LCP substrate so that each at least one thin film resistor is coupled to a respective one of the pair of circuit layers and so that each plurality of solder pads is aligned with a respective plurality of mask openings.24. The method of wherein each LCP solder mask is coupled to a respective one of the major surfaces of the LCP substrate so that the plurality of thin film resistors are sandwiched between the plurality of LCP solder masks and the LCP substrate.25. The method of wherein the plurality of thin film resistors is formed on the plurality of LCP solder masks by sputtering.26. The method of further comprising attaching a circuit component to corresponding solder pads of the plurality thereof.27. The method of further comprising forming at least one electrically conductive via through the LCP substrate.28. A method of making an electronic device comprising:forming a pair of ...

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Номер записи: 65
03-01-2019 дата публикации

PRINTED CIRCUIT BOARDS

Номер: US20190008031A1
Автор: KUO Sung Hsia, LAI Ho M, Nguyen Vincent
Принадлежит: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

An example method includes linking a transmit line and receive line to a respective via, and printing two paths to each via, wherein each path is interrupted by two pairs of contacts. When a first resistor is in a first pair of contacts at a receive via, first signal is formed between a receive point of a first connector and the receive line. When a first capacitor is in first pair of contacts at a transmit via, second signal is formed between transmit point of first connector and the transmit line. When a second resistor is in second pair of contacts at receive via, third signal is formed between receive point of a second connector and the receive line. When a second capacitor is in second pair of contacts at transmit via, fourth signal is formed between a transmit point of second connector and the transmit line. 1. A method of manufacturing a printed circuit board (PCB) , comprising:providing a substrate;linking a receive line and a transmit line to a receive via and a transmit via, respectively, in the substrate; andprinting a first path and a second path to each via, wherein each first path and second path is interrupted by a first pair of contacts and a second pair of contacts, respectively, whereinwhen a first resistor is coupled to the first pair of contacts of the receive via, a first signal path is formed between a receive connection point of a first connector and the receive line;when a first capacitor is inserted in the first pair of contacts of the transmit via, a second signal path is formed between a transmit connection of point of the first connector and the transmit line;when a second resistor is inserted in the second pair of contacts of the receive via, a third signal path is formed between a receive connection point of a second connector and the receive line; andwhen a second capacitor is inserted in the second pair of contacts of the transmit via, a fourth signal path is formed between a transmit connection point of the second connector and the ...

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Номер записи: 66
12-01-2017 дата публикации

THIN-FILM RESISTOR AND METHOD FOR PRODUCING THE SAME

Номер: US20170011826A1
Автор: HIROSHIMA Yasushi
Принадлежит:

Provided is a thin-film resistor that has a higher resistance value than the conventional thin-film resistors while retaining excellent TCR characteristics. The thin-film resistor includes a substrate, a pair of electrodes formed on the substrate, and a resistive film connected to the pair of electrodes. The resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, and each of the first resistive film and the second resistive film contains Si, Cr, and N as the main components. 1. A thin-film resistor comprising a substrate , a pair of electrodes formed on the substrate , and a resistive film connected to the pair of electrodes , whereinthe resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, andeach of the first resistive film and the second resistive film contains Si, Cr, and N as main components.2. The thin-film resistor according to claim 1 , wherein one of the first resistive film or the second resistive film has a positive TCR value claim 1 , and the other has a negative TCR value.3. The thin-film resistor according to claim 2 , wherein the first resistive film and the second resistive film contain different percentages of silicon nitride across xTCR (a threshold of silicon nitride) as a boundary claim 2 , the xTCR being a percentage of silicon nitride at which a positive TCR changes to a negative TCR or a negative TCR changes to a positive TCR.4. The thin-film resistor according to claim 1 , whereineach of the first resistive film and the second resistive film contains silicon nitride, anda percentage of Si that forms silicon nitride in the first resistive film relative to the entire Si contained in the first resistive film is less than or equal to 63%, and a percentage of Si that forms silicon nitride in the second resistive film relative to the ...

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Номер записи: 67
12-01-2017 дата публикации

METHOD AND DESIGN OF LOW SHEET RESISTANCE MEOL RESISTORS

Номер: US20170012041A1
Автор: Ahn Jae-Gyung, Chang Cheang-Whang, Chong Nui, Yeh Ping-Chin
Принадлежит: XILINX, INC.

An integrated circuit structure includes: a semiconductor substrate; a shallow trench isolation (STI) region in the semiconductor substrate; one or more active devices formed on the semiconductor substrate; and a resistor array having a plurality of resistors disposed above the STI region; wherein the resistor array comprises a portion of one or more interconnect contact layers that are for interconnection to the one or more active devices. 1. An integrated circuit structure , comprising:a semiconductor substrate;a shallow trench isolation (STI) region in the semiconductor substrate;one or more active devices formed on the semiconductor substrate; anda resistor array having a plurality of resistors disposed above the STI region;wherein the resistor array comprises a portion of one or more interconnect contact layers that are for interconnection to the one or more active devices.2. The integrated circuit structure of claim 1 , wherein the one or more interconnect contact layers are for implementing gate regions for the one or more active devices.3. The integrated circuit structure of claim 1 , further comprising two dummy regions claim 1 , wherein the STI region is located between the two dummy regions.4. The integrated circuit structure of claim 1 , wherein the resistor array has a sheet resistance of about 100 ohm/sq or less.5. The integrated circuit structure of claim 1 , wherein the resistor array is made of tungsten or tantalum.6. The integrated circuit structure of claim 1 , wherein at least one resistor in the resistor array has a length that is anywhere from 0.1 μm to 3 μm claim 1 , and a width that is anywhere from 0.01 μm to 0.1 μm.7. The integrated circuit structure of claim 1 , wherein the resistor array has at least five resistors.8. The integrated circuit structure of claim 1 , wherein the one or more interconnect contact layers comprises a first interconnect contact layer and a second interconnect contact layer above the first interconnect contact ...

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Номер записи: 68
14-01-2021 дата публикации

CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210012932A1
Автор: IMAHASHI Wataru, SHINOURA Takanori
Принадлежит:

A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode. 132-. (canceled)33. A chip resistor comprising:a substrate having a first surface, a second surface and a side surface, the first and the second surfaces being spaced apart from each other in a thickness direction of the substrate, the side surface being located between the first surface and the second surface;an upper electrode provided on the first surface of the substrate;a resistor element arranged on the first surface of the substrate and electrically connected to the upper electrode;a side electrode electrically connected to the upper electrode and has a first, a second and a third portion, the first portion being arranged on the side surface of the substrate, the second portion and the third portion overlapping with the first surface and the second surface in the thickness direction, respectively;an intermediate electrode covering the side electrode;an external electrode covering the intermediate electrode;a first protective layer located between the upper electrode and the intermediate electrode, the first protective layer being in contact with the upper ...

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Номер записи: 69
12-01-2017 дата публикации

CHIP RESISTOR, METHOD OF PRODUCING CHIP RESISITOR AND CHIP RESISTOR PACKAGING STRUCTURE

Номер: US20170013719A1
Автор: NAKA Kentaro
Принадлежит:

[Object] A method for efficiently manufacturing chip resistors is provided. 1. A chip resistor manufacturing method comprising the steps of:preparing at least three conductive elongated boards made of an electrically conductive material and a resistive member made of a resistive material;arranging said at least three conductive elongated boards apart from each other in a width direction crossing a longitudinal direction in which one of said at least three conductive elongated boards is elongated;forming a resistor aggregate by bonding the resistive member to said at least three conductive elongated boards; andcollectively dividing the resistor aggregate into a plurality of chip resistors by punching, each of the chip resistors including two electrodes and a resistor portion bonded to the two electrodes.2. The method according to claim 1 , wherein the step of forming a resistor aggregate uses welding.3. The method according to claim 2 , wherein the step of forming a resistor aggregate uses high energy beam wielding.4. The method according to claim 3 , wherein the step of forming a resistor aggregate uses electron beam welding or laser beam welding as the high energy beam welding.5. The method according to claim 1 , further comprising the step of bending one of said at least three conductive elongated boards.6. The method according to claim 5 , wherein the bending step is performed at the same time as the collectively dividing step.7. The method according to claim 1 , wherein one of said at least three conductive elongated boards has a thickness smaller than a thickness of the resistive member.8. The method according to claim 1 , wherein the resistive member includes a plurality of resistive elongated boards claim 1 , andthe step of forming a resistor aggregate comprises bonding each of the resistive elongated boards to two of said at least three conductive elongated boards.9. The method according to claim 8 , wherein the step of forming a resistor aggregate comprises ...

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Номер записи: 70
14-01-2021 дата публикации

THIN FILM RESISTOR

Номер: US20210013197A1
Автор: Chen Chien-Mao, YU Hung-Chih
Принадлежит:

A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material. 1. A semiconductor device , comprising:a metal thin film disposed on a semiconductor substrate;at least one contact structure disposed on the metal thin film,a dummy layer disposed on the metal thin film, wherein the dummy layer comprises at least one polishing resistance material; anda transistor gate structure disposed adjacent to the at least one contact structure, wherein a material of the transistor gate structure is the same as the at least one polishing resistance material.2. The device of claim 1 , wherein the at least one polishing resistance material is selected from a group c consisting of a metal-based material claim 1 , an oxide-based material claim 1 , a ceramic-based material claim 1 , and a combination thereof.3. The device of claim 1 , wherein the at least one polishing resistance material further comprises a barrier material.4. The device of claim 3 , wherein the barrier material is selected from a group consisting of: titanium (Ti) claim 3 , tantalum (Ta) claim 3 , titanium nitride (TiN) claim 3 , tantalum nitride (TaN) claim 3 , and a combination thereof.5. The device of claim 1 , wherein the metal thin film claim 1 , and the first and second contact structures form a thin film resistor.6. The device of claim 1 , wherein the dummy layer is formed of a polysilicon material.7. The device of claim 1 , wherein the at least one contact structure comprises first and second contact structures claim 1 , and wherein the first and second contact structures have a p-type work function and the at least one polishing resistance material has an n-type work function and is laterally spaced apart from the first and second contact structures ...

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Номер записи: 71
14-01-2016 дата публикации

APPARATUS, SYSTEM, AND METHOD FOR ELECTRONICS MANUFACTURING USING DIRECT WRITE WITH FABRICATED FOILS

Номер: US20160014900A1
Автор: Culp Slade R., Dardona Sameh, Piech Marcin, Schmidt Wayde R.
Принадлежит: UNITED TECHNOLOGIES CORPORATION

An apparatus system and method for an electronic component made with additive manufacturing processes and a foil substrate is provided. The electronic component may include one or more foil substrates and one or more elements. The elements may be produced by an additive manufacturing process. Moreover, the elements may be produced in the same plane or out of plain with one or more foil substrates. The elements may also be various structures, including, for example, connectors, electrical components (e.g., a resistor, a capacitor, a switch, and/or the like), and/or any other suitable electrical elements and/or structures. 1. A method , comprising:producing a first foil from a metal substrate by at least one of an etching process or micro-machining process, wherein the foil is a portion of a circuit;writing a first structure by depositing conductive material via a direct write manufacturing process to the first foil, wherein the first structure is substantially in a plane defined by the first foil; andwriting a second structure by depositing conductive material via the direct write manufacturing process to the first foil, wherein at least a portion of the second structure is substantially out of the plane defined by the first foil.2. The method of claim 1 , further comprising pre-processing the first foil claim 1 , wherein the pre-processing includes treating the foil to facilitate bonding of at least one of the first structure or the second structure.3. The method of claim 1 , further comprising post-processing an electronic assembly claim 1 , wherein the electronic assembly comprises the foil claim 1 , the first structure and the second structure.4. The method of claim 1 , wherein the first structure is at least one of a connector or an electronic component.5. The method of claim 1 , wherein the second structure is at least one of a connector and an electronic component.6. The method of claim 1 , further comprising coupling a second foil to the second structure.7. ...

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Номер записи: 72
21-01-2016 дата публикации

Measuring Resistor and Method for Producing a Measuring Resistor

Номер: US20160020004A1
Автор: Kampl Severin, KIRCHNER Uwe
Принадлежит:

A measuring resistor for high-current measurements is provided, which has a defined resistance value. The measuring resistor has a resistive layer having a sheet resistivity. The resistance value of the measuring resistor is defined by the resistive layer and is less than the sheet resistivity of the resistive layer.

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Номер записи: 73
17-04-2014 дата публикации

ELECTRIC HEATER AND METHOD FOR MANUFACTURING SUCH AN ELECTRIC HEATER

Номер: US20140103028A1
Автор: SCHLIPF Andreas
Принадлежит: TURK & HILLINGER GMBH

A tubular electric heater () is provided with an outer tube (), with a heat-conducting body () and with a tubular electric heating element (), wherein the tubular electric heater () has a continuous groove or opening in the direction in which the tube extends and wherein the heat-conducting body has an opening () passing through it in the direction in which the tubular electric heater () extends, and the outer tube is supported indirectly or directly on limiting surfaces () defining this opening () in the heat-conducting body or on an inner tube (). A method is provided for manufacturing such a tubular electric heater. 1. A tubular electric heater comprising:an outer tube;a heat-conducting body; anda tubular electric heating element, wherein:the tubular electric heater has a continuous groove or opening in a direction in which the tube extends;the heat-conducting body has an opening or groove passing through the heat-conducting body in the direction in which the tubular electric heater extends and has limiting surfaces defining said opening or groove; andthe outer tube is supported at least in some sections indirectly or directly on the limiting surfaces.2. A tubular electric heater in accordance with claim 1 , wherein the outer tube is deformed such that a part of a jacket surface of the outer tube meshes with the opening passing through the heat-conducting body in the direction in which the heat-conducting body extends and the outer tube is supported at least in some sections on the limiting surfaces defining said opening in the heat-conducting body.3. A tubular electric heater in accordance with claim 1 , further comprising positioning devices provided on the heat-conducting body claim 1 , wherein the tubular electric heating element is fixed at least in some sections by the positioning devices.4. A tubular electric heater in accordance with claim 1 , wherein the heat-conducting body is cut out of a solid material or tube.5. A tubular electric heater in ...

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Номер записи: 74
18-01-2018 дата публикации

SELECTIVE DEVICE, MEMORY CELL, AND STORAGE UNIT

Номер: US20180019391A1
Автор: Ikarashi Minoru, Ohba Kazuhiro
Принадлежит:

A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series. 1. A selective device comprising:a first electrode,a second electrode disposed to face the first electrode;a switch device provided between the first electrode and the second electrode; anda non-linear resistive device that contains one or more of boron (B), silicon (Si), and carbon (C), the non-linear resistive device being coupled to the switch device in series.2. The selective device according to claim 1 , wherein the non-linear resistive device has a non-linear resistive layer including an alloy or a compound that contains one or more of boron (B) claim 1 , silicon (Si) claim 1 , and carbon (C).3. The selective device according to claim 1 , wherein the non-linear resistive device has a non-linear resistive layer that includes oxide claim 1 , nitride claim 1 , or oxynitride of any of boron (B) and silicon (Si).4. The selective device according to claim 1 , wherein the non-linear resistive device has a dielectric withstanding voltage of 1 MV/cm or higher claim 1 , and applies a current with a current density of 10 MA/cmor higher at a voltage of 2 V or lower that is applied to the non-linear resistive device.5. The selective device according to claim 1 , wherein the switch device includes a switch layer that is changed into a low-resistance state by increasing an applied voltage to a predetermined threshold voltage or higher claim 1 , the switch layer being changed into a high-resistance state by decreasing the applied voltage to the predetermined threshold voltage or lower claim 1 , or by removing the applied voltage.6. The selective ...

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Номер записи: 75
21-01-2016 дата публикации

Self-regulating conductive heater and method of making

Номер: US20160021705A1
Автор: Jack Barfuss, Syed Rafat Iqbal
Принадлежит: GENTHERM CANADA LTD

A heater comprising: a heater layer including: (a) a thermoplastic elastomer; and (b) a plurality of conductive fillers mixed within the thermoplastic elastomer, wherein the conductive fillers are a metal coated material or entirely made of metal; and wherein the heater layer is made up of about 30 percent or less conductive fillers.

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Номер записи: 76
17-01-2019 дата публикации

ELECTRICAL FUSE AND/OR RESISTOR STRUCTURES

Номер: US20190019752A1
Автор: Basker Veeraraghavan S., Cheng Kangguo, Khakifirooz Ali, Li Juntao
Принадлежит:

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material. 1. A semiconductor structure , comprising:metal gates having a capping material on a top surface thereof;contact structures in recesses in a dielectric material between the metal gates;an opening in the dielectric material, wherein the opening is between the contact structures; andan insulator material and metal material within the opening.2. The semiconductor structure of wherein the metal material contacts surfaces of the dielectric material in the opening.3. The semiconductor structure of claim 2 , wherein the insulator material is in a trench in the metal material.4. The semiconductor structure of claim 1 , wherein the contact structures each comprise a liner formed in one of the recesses in the dielectric material.5. The semiconductor structure of claim 4 , wherein the metal material contacts the liner of each of the contact structures.6. The semiconductor structure of claim 1 , wherein top surfaces of the dielectric layer claim 1 , the capping material claim 1 , the contact structures claim 1 , the insulator material claim 1 , and the metal material are co-planar.7. The semiconductor structure of claim 1 , further comprising:another dielectric layer over the dielectric layer, the capping material, the contact structures, the insulator material, and the metal material; andadditional contacts in the other dielectric layer.8. The semiconductor structure of claim 7 , wherein the additional contacts contact the contact structures claim 7 , ...

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Номер записи: 77
17-01-2019 дата публикации

SEMICONDUCTOR DEVICE RESISTOR INCLUDING VIAS AND MULTIPLE METAL LAYERS

Номер: US20190019859A1
Автор: Daigle Tyler, Jasa Hrvoje, Jordan Andrew, Maher Gregory
Принадлежит: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

In one general aspect, an apparatus can include a first terminal, a second terminal, and a resistive element extending between the first terminal and the second terminal. The resistive element can include a first via in contact with a first segment of a first metal layer and a first segment of a second metal layer, and can include a second via in contact with the first segment of the second metal layer and a second segment of the first metal layer. The apparatus can also include a third via in contact with the second segment of the first metal layer and a third segment of the second metal layer. 1. An apparatus , comprising:a first terminal;a second terminal; and a first via in contact with a first segment of a first metal layer and a first segment of a second metal layer;', 'a second via in contact with the first segment of the second metal layer and a second segment of the first metal layer; and', 'a third via in contact with the second segment of the first metal layer and a second segment of the second metal layer, more than half of the resistive element is made of a material that has a temperature coefficient less than a temperature coefficient of at least one of the first metal layer or the second metal layer., 'a resistive element extending between the first terminal and the second terminal, the resistive element including2. The apparatus of claim 1 , wherein the first segment of the first metal layer and the second segment of the first metal layer are aligned within a same plane claim 1 , the first segment of the first metal layer is electrically isolated from the second segment of the second metal layer within the plane by a dielectric.3. (canceled)4. The apparatus of claim 1 , wherein the first metal layer is disposed within a plane parallel to the second metal layer.5. The apparatus of claim 1 , wherein the first via claim 1 , the second via claim 1 , and the third via intersect a plane.6. The apparatus of claim 1 , wherein the resistive element defines a ...

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Номер записи: 78
28-01-2016 дата публикации

HEATING MEANS AND METHODS OF MANUFACTURE

Номер: US20160022953A1
Автор: Richards Fredrick M.
Принадлежит: SMITHS MEDICAL INTERNATIONAL LIMITED

Heating elements for respiratory tubing () comprise an electrically-insulating substrate () with a printed looped track () of carbon extending along the substrate between two metal terminals () at one end. The heating elements are preferably made by printing several looped tracks ( to ) side by side on an insulative substrate (), applying a metal bus bar () along one edge () of the sheet over the free ends of the track loops. The bus bar is cut between the free ends of the tracks ( and ) to form isolated terminal pads connected with opposite ends of the tracks. The sheet is cut () between the tracks ( to ) to divide it into separate heating elements. 118-. (canceled)19. A method of manufacturing heating elements comprising the steps of providing a planar substrate with an electrically-insulating surface , depositing on the surface a plurality of resistive tracks of an electrically-conductive , non-metallic material , each track being in the form of a loop where the closed ends of each loop are positioned towards one edge of the substrate and the two open ends of each loop are positioned towards the opposite edge of the substrate , providing an electrically-conductive terminal before or after deposition of the tracks , the terminal extending across the open ends of each track in electrical contact with the ends of each track , and subsequently cutting the substrate between adjacent tracks to form a plurality of separate heating elements.20. A method according to claim 19 , characterized in that the terminal is initially in the form of a continuous bus bar and that material of the bus bar is removed from between open ends of the same track to isolate the open ends electrically from one another.21. A method according to claim 19 , characterized in that the substrate is of an electrically-insulative plastics material.22. A method according to claim 19 , characterized in that the tracks include carbon.23. A heating element made by a method comprising the steps of ...

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Номер записи: 79
16-01-2020 дата публикации

PRINTED TEMPERATURE SENSOR

Номер: US20200020467A1
Автор: GROEN Wilhelm Albert, Rentrop Cornelis Hermanus Arnoldus, Saalmink Milan, Smits Edsger Constant Pieter, SWEELSSEN Jörgen
Принадлежит:

A printed temperature sensor () comprising a substrate () with an electrical circuit () comprising a pair of electrodes () separated by an electrode gap (G). A sensor material () is disposed between the electrodes () to fill the electrode gap (G), wherein the sensor material () comprises semi-conducting micro-particles () comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles () are mixed in a dielectric matrix () functioning as a binder for printing the sensor material (); wherein the micro-particles () contact each other to form an interconnected network through the dielectric matrix (), wherein the interconnected network of micro-particles () acts as a conductive pathway with negative temperature coefficient between the electrodes (). 1. A printed temperature sensor comprising:an electrical circuit comprising a first electrode and a second electrode, wherein the first electrode and the second electrode are separated by an electrode gap; anda sensor material disposed between the first electrode and the second electrode, wherein the sensor material fills the electrode gap, wherein the sensor material comprises a semi-conducting micro-particles comprising a negative temperature coefficient (NTC) material, wherein the micro-particles are mixed in a dielectric matrix that functions as a binder for printing the sensor material, wherein the micro-particles contact each other to form an interconnected network through the dielectric matrix, wherein the interconnected network of micro-particles acts as a conductive pathway having a negative temperature coefficient between the electrodes uch that a resistance of the interconnected network of micro-particles between the electrodes reduces with increases in temperature.2. The sensor according to claim 1 , wherein a volumetric ratio of the micro-particles with respect to the dielectric matrix is above a percolation threshold of the micro-particles to form a connected component ...

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Номер записи: 80
29-01-2015 дата публикации

CHIP THERMISTOR AND METHOD OF MANUFACTURING SAME

Номер: US20150028992A1
Автор: SAITO Yo, TSUCHIDA Daisuke, YAMADA Kouki
Принадлежит: TDK Corporation

A chip thermistor has a thermistor portion comprised of a ceramic material containing respective metal oxides of Mn, Ni, and Co as major ingredients; a pair of composite portions comprised of a composite material of Ag—Pd, and respective metal oxides of Mn, Ni, and Co and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions ; and external electrodes connected to the pair of composite portions , respectively. In this manner, the pair of composite portions are used as bulk electrodes and, for this reason, the resistance of the chip thermistor can be adjusted mainly with consideration to the resistance in the thermistor portion , without need for much consideration to the distance between the external electrodes and other factors. 1. A chip thermistor comprising:a thermistor portion comprised of a ceramic material containing a metal oxide of at least one of Mn, Ni, or Co as a major ingredient;a pair of composite portions comprised of a composite material including a metal and a metal oxide and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions.2. The chip thermistor according to claim 1 , wherein the thermistor portion is configured in a layered structure such that a direction in which the pair of composite portions are opposed to each other is a laminated direction.3. The chip thermistor according to claim 1 , wherein each of the pair of composite portions is configured in a layered structure such that a direction in which the pair of composite portions are opposed to each other is a laminated direction.4. The chip thermistor according to claim 1 , wherein the thermistor portion is substantially totally connected to the pair of composite portions claim 1 , on both sides thereof.5. The chip thermistor according to claim 1 , wherein the thermistor portion is composed of a thermistor element having a negative characteristic claim ...

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Номер записи: 81
26-01-2017 дата публикации

Packaged Electrical Components With Supplemental Conductive Structures

Номер: US20170027058A1
Автор: Bushnell Tyler S., Cardinali Steven P., Ness Trevor J., Perkins Ryan C.
Принадлежит:

Electrical components such as integrated circuits and other components may be mounted on a substrate such as a printed circuit substrate. A molded plastic cap may cover the components and a portion of the printed circuit substrate to form a packaged electrical device. Metal structures such as springs, posts, and other metal members may be insert molded within the plastic cap. A metal layer on the surface of the cap may be patterned to from electromagnetic shielding, signal paths, contact pads, sensor electrodes, antennas, and other structures. Multiple substrates each with a respective set of mounted electrical components may be joined using a flexible printed circuit. The flexible printed circuit may be covered with a rigid cap portion or an elastomeric material or may be left uncovered. 1. A packaged electrical device , comprising:a substrate;electrical components mounted to the substrate;a cap that covers the electrical components and that has an exterior surface; andsignal lines formed from metal traces on the surface of the cap.2. The packaged electrical device defined in wherein the signal lines include parallel metal traces that form a signal bus.3. The packaged electrical device defined in wherein the signal lines include contact pads and wherein the electrical components include silicon integrated circuit die.4. The packaged electrical device defined in wherein the signal lines comprise electroplated signal lines.5. The packaged electrical device defined in wherein the cap comprises laser activated areas under the electroplated signal lines.6. The packaged electrical device defined in wherein the signal lines are electrically isolated from the electrical components.7. The packaged electrical device defined in wherein the cap comprises molded plastic claim 3 , the packaged electrical device further comprising a metal structure embedded within the cap.8. The packaged electrical device defined in wherein the electrical structure has a portion that is mounted ...

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Номер записи: 82
10-02-2022 дата публикации

CIRCUIT SUBSTRATE

Номер: US20220044849A1
Автор: KANEGAE Satoshi
Принадлежит: KOA Corporation

Particularly, it is an object to provide a circuit substrate that can reduce a field intensity near an electrode having a high potential. A circuit substrate of the present invention includes an insulated substrate, a thin-film resistive element, and electrodes electrically connected to both sides of the thin-film resistive element, the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate. The circuit substrate is characterized in that the thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, and a dummy wire for reducing a field intensity is provided on a high-potential electrode side. 1. A circuit substrate comprising an insulated substrate , a thin-film resistive element , and electrodes electrically connected to both sides of the thin-film resistive element , the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate , characterized in thatthe thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, anda dummy wire for reducing a field intensity is provided on a high-potential electrode side.2. The circuit substrate according to claim 1 , characterized in that the dummy wire is provided continuously to the fold-back pattern of the resistance wire.3. The circuit substrate according to claim 2 , characterized in that the dummy wire is folded back to outside from the resistance wire positioned outermost of the fold-back pattern.4. The circuit substrate according to claim 1 , characterized in that the dummy wire branches off from the resistance wire.5. The circuit substrate according to claim 4 , characterized in that the dummy wire branches off from a fold vertex of the resistance wire.6. The circuit substrate according to claim 1 , characterized in that a plurality of the dummy wires are provided. The present invention relates to a circuit substrate including a thin-film resistive element ...

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Номер записи: 83
01-02-2018 дата публикации

METHOD OF MAKING A HEATER OF AN ELECTRONIC VAPING DEVICE

Номер: US20180027877A1
Автор: Alvarez David, Dendy Charles, McElhinney Patrick, TRAN Nam, Tucker Christopher S.
Принадлежит:

A method of forming a heater assembly of an e-vaping device includes bending a wire to form a first lobe and bending the wire to form a second lobe. The first lobe and the second lobe form a generally sinuously-shaped heater having a first set of lobes and a second set of lobe. A first apex of the first lobe is generally opposite a second apex of the second lobe. The method may also include curling the first set of lobes towards the second set of lobes to form a heater having a substantially tubular form. The heater defines an opening there through. 1. A method of forming a heater assembly of an e-vaping device , the method comprising:bending a wire to form a first lobe;bending the wire to form a second lobe, the first lobe and the second lobe forming a generally sinuously-shaped heater having a first set of lobes and a second set of lobes, a first apex of the first lobe being generally opposite a second apex of the second lobe;curling the first set of lobes towards the second set of lobes to form a heater having a substantially tubular form, the heater defining an opening there through.2. The method of claim 1 , further comprising:threading a wick through the opening in the heater.3. The method of claim 1 , wherein the curling comprises:placing a wick across the second set of lobes; andcurling the first set of lobes over the wick, such that the heater at least partially surrounds the wick.4. The method of claim 1 , further comprising:bending the wire to form a third lobe having a third apex;bending the wire to form a fourth lobe having a fourth apex; andbending the wire to form a fifth lobe having a fifth apex, the third apex and the fifth apex being in the first set of lobes, and the second apex and the fourth apex being in the second set of lobes.5. The method of claim 1 , wherein the wire is a nickel-chromium wire.6. The method of claim 1 , further comprising:attaching electrical leads to a first end and a second end of the heater.7. The method of claim 1 , ...

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Номер записи: 84
28-01-2021 дата публикации

BASE METAL ELECTRODES FOR METAL OXIDE VARISTOR

Номер: US20210027921A1
Автор: CHEN Guoliang, LEI Ming, Liu Shuying, SUI Youqun
Принадлежит: Dongguan Littelfuse Electronics Company Limited

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers. 1. A metal oxide varistor (MOV) device comprising:a MOV chip;a first base metal electrode disposed on a first side of the MOV chip; anda second base metal electrode disposed on a second side of the MOV chip opposite the first side; a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers; and', 'a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers;, 'each of the first base metal electrode and the second base metal electrode comprisingwherein each of the first base metal electrode layers are formed of aluminum, have a thickness in a range of 20-200 micrometers, and have a surface area in a range of 60-90% of respective surface areas of the surfaces of the MOV chip on which the first base metal electrode layers are disposed, and wherein each of the second base metal electrode layers are formed of silver, have a thickness in a range of 2-10 micrometers, and have a surface area that is less than 60% of ...

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Номер записи: 85
01-05-2014 дата публикации

HEATING ELEMENT AND METHOD FOR MANUFACTURING SAME

Номер: US20140117003A1
Автор: Choi Hyeon, Kim Ki-Hwan, Kim Sujin
Принадлежит: LG CHEM, LTD.

The present specification relates to a heating element in which a heating value for each region is controlled or a heating element in which the heating value for each region is controlled and which is inconspicuous, and a method for manufacturing the same. 1. A heating element comprising:a substrate;a conductive heating pattern provided on the substrate; andtwo bus bars provided so as to apply voltage to both ends of the conductive heating pattern, respectively,wherein the conductive heating pattern comprises a pattern in which the conductive heating pattern comprises a pattern in which the number of lines is controlled in at least some regions in a pattern comprising lines connecting vertices constituting a border of a closed figure having at least three vertices, according to a distance from the bus bar or along a longitudinal direction of the bus bar.2. The heating element of claim 1 , wherein the closed figure comprises one or two or more of a closed figure having three vertices claim 1 , a close figure having four vertices claim 1 , a closed figure having five vertices claim 1 , a closed figure having six vertices claim 1 , a closed figure having seven vertices claim 1 , and a closed figure having eight vertices.3. The heating element of claim 1 , wherein the closed figure is composed of a closed figure having four vertices.4. The heating element of claim 1 , wherein the closed figure is composed of a closed figure having six vertices.5. The heating element of claim 1 , wherein the closed figure is a figure in which at least one of a polygon having at least three vertices claim 1 , a position of a vertex of a polygon having at least three vertices claim 1 , and a curvature degree of lines thereof is modified.6. The heating element of claim 1 , wherein the closed figure is a figure in which a position of each vertex of a polygon is changed in a specific unit region claim 1 , a figure in which a line of a polygon is modified in a form where the vertices are ...

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Номер записи: 86
01-05-2014 дата публикации

Multilayer wiring base plate and probe card using the same

Номер: US20140118017A1
Автор: Noboru Otabe, Takayasu SUGAI, Toshinori OMORI
Принадлежит: Micronics Japan Co Ltd

A multilayer wiring base plate includes an insulating plate including a plurality of synthetic resin layers made of an insulating material, a wiring circuit provided in the insulating plate, a thin-film resistor formed along at least one of the synthetic resin layers to be buried in the synthetic resin layer and inserted in the wiring circuit, and a heat expansion and contraction restricting layer formed to be buried in the synthetic resin layer adjacent to the synthetic resin layer in which the thin-film resistor is formed to be buried, arranged along the thin-film resistor, and having a smaller linear expansion coefficient than a linear expansion coefficient of the adjacent synthetic resin layers.

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Номер записи: 87
31-01-2019 дата публикации

Systems And Methods For Forming A Thin Film Resistor Integrated In An Integrated Circuit Device

Номер: US20190035878A1
Автор: Fest Paul
Принадлежит: MICROCHIP TECHNOLOGY INCORPORATED

A method is provided for forming an integrated thin film resistor (TFR) in a semiconductor integrated circuit device. A first dielectric layer is deposited on an integrated circuit (IC) structure including conductive contacts, a resistive film (e.g., comprising SiCCr, SiCr, CrSiN, TaN, TaSi, or TiN) is deposited over the first dielectric layer, the resistive film is etched to define the dimensions of the resistive film, and a second dielectric layer is deposited over the resistive film, such that the resistive film is sandwiched between the first and second dielectric layers. An interconnect trench layer may be deposited over the second dielectric layer and etched, e.g., using a single mask, to define openings that expose surfaces of the IC structure contacts and the resistive film. The openings may be filled with a conductive interconnect material, e.g., copper, to contact the exposed surfaces of the conductive contacts and the resistive film. 1. A method of forming an integrated thin film resistor (TFR) in a semiconductor integrated circuit device , the method comprising:forming an integrated circuit structure including at least one conductive contact;forming a first dielectric layer over the integrated circuit structure;forming a resistive film over the first dielectric layer;forming a second dielectric layer over the resistive film, such that the resistive film is arranged between the first and second dielectric layers;forming an interconnect trench layer over the second dielectric layer;performing at least one etch process to define openings that expose both (a) at least one surface of the at least one conductive contact and (b) at least one surface of the resistive film; andat least partially filling the openings with a conductive interconnect material to contact the exposed surfaces of the at least one conductive contact and the resistive film.2. The method of claim 1 , wherein the integrated circuit structure includes a memory cell or transistor structure ...

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Номер записи: 88
30-01-2020 дата публикации

IC WITH THIN FILM RESISTOR WITH METAL WALLS

Номер: US20200035598A1
Автор: GUO HONGLIN, HONG QI-ZHONG, SHINN GREGORY BOYD, TIMMER BENJAMIN JAMES
Принадлежит:

An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls. 1. A method of fabricating an integrated circuit (IC) , comprising:providing a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer;forming a thin film resistor (TFR) comprising a TFR layer on the ILD layer;forming at least one vertical metal wall on at least two sides of the TFR;wherein the metal walls include at least 2 metal levels coupled by filled vias, and wherein the functional circuitry is outside the metal walls.2. The method of claim 1 , wherein the TFR layer comprises silicon chromium (SiCr) or nickel chromium (NiCr).3. The method of claim 2 , wherein the TFR layer comprises doped polysilicon.4. The method of claim 1 , wherein a thickness of the TFR layer is 1 nm to 100 nm.5. The method of claim 1 , further comprising laser trimming the TFR.6. The method of claim 1 , wherein the metal walls each include at least 2 of the metal walls.7. The method of claim 1 , wherein the at least 2 metal levels of the metal walls include a staggered plurality of metal islands.8. The method of claim 1 , wherein the at least 2 metal levels of the metal walls share a minimum width on the IC.9. The method of claim 1 , wherein the metal walls are electrically isolated from the semiconductor surface layer.10. The method of claim 1 , wherein the TFR has a sheet resistance of 100 to 1 claim 1 , ...

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Номер записи: 89
31-01-2019 дата публикации

THINNED ELECTRONIC PRODUCT AND MANUFACTURING METHOD THEREOF

Номер: US20190037698A1
Автор: HUANG Pei-Hsuan, PU Yi-Feng, SHIEH Wei-Ming
Принадлежит:

A manufacturing method of an electronic product is provided. The manufacturing method includes following steps. Firstly, a conductive circuit is formed on a first surface of a supporting body. Then, an electronic element is disposed on the conductive circuit, and the electronic element is electrically connected to the conductive circuit. Then, a film layer is disposed on the conductive circuit having the electronic element, and the electronic element and the conductive circuit are wrapped between the supporting body and the film layer. 1. A manufacturing method of a thinned electronic product , comprising:forming a conductive circuit on a first surface of a supporting body, wherein the conductive circuit is made of a conductive metal layer, and the conductive metal layer is a metal foil, and the supporting body is a thinned supporter with a predetermined supporting force or strength;disposing an electronic element on the conductive circuit, wherein the electronic element is electrically connected to the conductive circuit; anddisposing a film layer on the conductive circuit having the electronic element, wherein the electronic element and the conductive circuit are wrapped between the supporting body and the film layer.2. The manufacturing method according to claim 1 , wherein the conductive metal layer is patterned to form the conductive circuit claim 1 , and forming the conductive circuit comprises:placing the conductive metal layer on a toppan stamping plate, wherein a protrusion of the toppan stamping plate forms a circuit pattern, and the conductive metal layer contains a binder;placing the supporting body on the conductive metal layer;hot pressing the conductive metal layer through the toppan stamping plate to press and fix a part of the conductive metal layer on the supporting body to from the patterned conductive metal layer having the circuit pattern on the supporting body; andremoving another part of the conductive metal layer not pressed and fixed on the ...

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Номер записи: 90
31-01-2019 дата публикации

THINNED ELECTRONIC PRODUCT AND MANUFACTURING METHOD THEREOF

Номер: US20190037699A1
Автор: HUANG Pei-Hsuan, PU Yi-Feng, SHIEH Wei-Ming
Принадлежит:

A manufacturing method of an electronic product is provided. The manufacturing method includes following steps. Firstly, a conductive circuit is formed on a first surface of a supporting body. Then, an electronic element is disposed on the conductive circuit, and the electronic element is electrically connected to the conductive circuit. Then, a film layer is disposed on the conductive circuit having the electronic element, and the electronic element and the conductive circuit are wrapped between the supporting body and the film layer. 1. A manufacturing method of a thinned electronic product , comprising:forming a conductive circuit on a first surface of a supporting body, wherein the conductive circuit is made of a patterned conductive ink layer;disposing an electronic element on the conductive circuit, wherein the electronic element is electrically connected to the conductive circuit; anddisposing a film layer on the conductive circuit having the electronic element, wherein the electronic element and the conductive circuit are wrapped between the supporting body and the film layer.2. The manufacturing method according to claim 1 , wherein forming the conductive circuit comprises:forming the patterned conductive ink layer having a polymer or adhesive and a conductive material on the supporting body; andcuring the patterned conductive ink layer to form the conductive circuit having a circuit pattern on the supporting body.3. The manufacturing method according to claim 1 , wherein the film layer is formed on the supporting body having the electronic element and the conductive circuit by an out-mold wrapping process claim 1 , a high temperature vacuum adsorption process claim 1 , a hot pressing process claim 1 , an ultrasonic melting process claim 1 , a melt bonding process or an adhesive bonding process.4. The manufacturing method according to claim 1 , wherein the supporting body is a thinned supporter with a predetermined supporting force or strength to provide a ...

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Номер записи: 91
09-02-2017 дата публикации

CHIP RESISTOR AND METHOD FOR MANUFACTURING SAME

Номер: US20170040091A1
Автор: NAKAYAMA SHOGO
Принадлежит:

A chip resistor includes an insulating substrate, a resistive element provided on an upper surface of the insulating substrate, a pair of upper-surface electrodes provided on respective ones of both end portions of an upper surface of the resistive element so as to expose a part of the upper surface of the resistive element from the upper-surface electrodes, and a protective layer that covers the part of the resistive element and that does not cover the pair of upper-surface electrodes. The pair of upper-surface electrodes have exposed upper surfaces and exposed edge surfaces, respectively. Each of the edge surfaces of the pair of upper-surface electrodes does not project outward from respective one of the edge surfaces of the insulating substrate. The chip resistor can reduce a temperature coefficient of resistance to improve the temperature coefficient of resistance. 1. A chip resistor comprising:an insulating substrate having an upper surface and edge surfaces;a resistive element provided on the upper surface of the insulating substrate;a pair of upper-surface electrodes provided on respective ones of both end portions of the upper surface of the resistive element so as to expose a part of an upper surface of the resistive element from the upper-surface electrodes; anda protective layer that covers the part of the resistive element and that does not cover the pair of upper-surface electrodes,wherein the pair of upper-surface electrodes have exposed upper surfaces and exposed edge surfaces, respectively, andwherein each of the edge surfaces of the pair of upper-surface electrodes does not project outward from respective one of the edge surfaces of the insulating substrate.2. The chip resistor according to claim 1 , further comprising a pair of plating layers provided on the upper surfaces and the edge surfaces of the pair of upper-surface electrodes.3. A method of manufacturing a chip resistor claim 1 , comprising: an insulating substrate,', 'a resistive element ...

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Номер записи: 92
08-02-2018 дата публикации

Thin Film Resistor

Номер: US20180040396A1
Автор: Ying-Chieh Lee
Принадлежит: National Pingtung University of Science and Technology

A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

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Номер записи: 93
08-02-2018 дата публикации

ELECTRICAL FUSE AND/OR RESISTOR STRUCTURES

Номер: US20180040557A1
Автор: Basker Veeraraghavan S., Cheng Kangguo, Khakifirooz Ali, Li Juntao
Принадлежит:

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material. 1. A method comprising:forming metal gates having a capping material on a top surface thereof;protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material;forming an insulator material and metal material within the recess;forming contact structures in the dielectric material between the metal gates, wherein the recess is formed between the contact structures and first filled with the metal material followed by the insulator material; andforming a contact in direct electrical contact with the metal material.2. The method of claim 1 , wherein the recess is formed as an opening in the dielectric material above the contact structures.3. The method of claim 1 , further comprising removing excess insulator material formed on the metal material outside the recess.4. The method of claim 1 , further comprising forming a pattern on the insulator material prior to forming the contact.5. A method comprising:forming metal gate structures in a dielectric material;forming a capping material over the metal gate structures;forming a mask over the capping material of the metal gate structures;recessing the dielectric material between the metal gate structures by an etching process while the mask over the capping material protects the capping material and the metal gate structures;depositing insulator material and metal material within the recess in the dielectric material;forming contact structures in ...

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Номер записи: 94
24-02-2022 дата публикации

TEMPERATURE COMPENSATION FOR SILICON RESISTOR USING INTERCONNECT METAL

Номер: US20220057818A1
Автор: Gonzalez Octavio A., Seaberg Charles Eric
Принадлежит:

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor. 1. An integrated circuit , comprising:a driver having a first driver output and a second driver output;{'claim-text': ['a process resistor including a first material having a first temperature coefficient, and', 'an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient, wherein a first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor; and'], '#text': 'a first resistance coupled between a first node coupled to the first driver output and a second node, wherein the first resistance includes:'}{'claim-text': ['a second process resistor including the first material, and', 'a second interconnect resistor including the second material and configured to provide at least 20% of the second resistance, wherein a first terminal of the second interconnect resistor is directly connected to a first terminal of the second process resistor.'], '#text': 'a second resistance coupled between the second node and a third node coupled to the second driver output, wherein the second resistance includes:'}2. The integrated circuit of claim 1 , ...

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Номер записи: 95
24-02-2022 дата публикации

THERMISTOR CHIP AND PREPARATION METHOD THEREOF

Номер: US20220059260A1
Автор: BAI Qixing, BAI Xiaohai, DUAN Zhaoxiang, TANG Limin, YANG Jun, YANG Mengtian
Принадлежит:

A thermistor chip is provided, which includes a thermosensitive ceramic substrate, a surface electrode and a bottom electrode. The surface electrode and the bottom electrode are respectively arranged on the two surfaces of the thermosensitive ceramic substrate. The surface electrode is a silver layer. The bottom electrode consists of a silver layer, a titanium-tungsten alloy layer, a copper layer and a gold layer, laminating on the thermosensitive ceramic substrate in turn from inside to outside. A preparation method thereof is also provided. The thermistor chip can meet the requirements of both solder paste reflow soldering and wire bonding process simultaneously, and has the advantages of good bonding effect and high temperature resistance, high reliability and high stability. 1. A thermistor chip , comprising a thermosensitive ceramic substrate , a surface electrode and a bottom electrode , and the surface electrode and the bottom electrode are arranged on the two surfaces of the thermosensitive ceramic substrate respectively , wherein the surface electrode is a silver layer; the bottom electrode consists of a silver layer , a titanium-tungsten alloy layer , a copper layer and a gold layer , laminating on the thermosensitive ceramic substrate in turn from inside to outside.2. The thermistor chip of claim 1 , wherein a thickness of the silver layer of the bottom electrode is 4˜7 microns claim 1 , a thickness of the titanium-tungsten alloy layer is 0.1˜0.15 microns claim 1 , a thickness of the copper layer is 0.1˜0.2 microns claim 1 , and a thickness of the gold layer is 0.25˜0.55 microns.3. The thermistor chip of claim 1 , wherein a mass ratio of titanium to tungsten of the titanium-tungsten alloy layer of the bottom electrode is 1:9.4. The thermistor chip of claim 1 , wherein a thickness of the silver layer of the surface electrode is 4˜7 microns.5. The thermistor chip of claim 1 , wherein the silver layers of the surface electrode and the bottom electrode are ...

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Номер записи: 96
15-02-2018 дата публикации

HEATABLE LUMINAIRE COVER

Номер: US20180043862A1
Автор: Guldan Marcus, Lesmeister Lothar, Schlarb Andreas, Schmidt Sebastian
Принадлежит:

A method for producing a heatable luminaire cover is described. The heatable luminaire cover has: a polymeric main body, a first busbar, a second busbar and at least two conductor tracks on the inside of the polymeric main body. 1. A method for producing a heatable luminaire cover , comprising:preparing a polymeric main body;fixing a plurality of conductor tracks on an inner side of the polymeric main body by ultrasonically embedding at least one section of each conductor track of the plurality of conductor tracks into the surface of the polymeric main body at a depth that is from 50% to 90% of their thickness; and 'wherein the plurality of conductor tracks is arranged between the first busbar and the polymeric main body and between the second busbar and the polymeric main body.', 'electrically connecting each conductor track of the plurality of conductor tracks to a first busbar and a second busbar, independently from other conductor tracks of the plurality of conductor tracks,'}2. The method according to claim 1 , wherein a protective coating is applied on an outer side of the polymeric main body.3. The method according to claim 1 , wherein the polymeric main body is prepared by injection molding or by thermoforming. The present application is a continuation application of U.S. patent application Ser. No. 14/361,695 filed on May 29, 2014, which is the US national stage of International Patent Application PCT/EP2012/074796 filed on Dec. 7, 2012 which, in turn, claims priority to European Patent Application EP 11194447.6 filed on Dec. 20, 2011, all of which is incorporated in their entirety by reference.The invention relates to a heatable luminaire cover, a method for its production, and its use.The effectiveness of motor vehicle lighting can be impaired at low ambient temperatures, in particular in the winter. Snow, ice, or condensed atmospheric moisture can accumulate on the outer side of the cover of the motor vehicle luminaire. Atmospheric moisture can also ...

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Номер записи: 97
08-05-2014 дата публикации

METHOD FOR FORMING A HEATING ELEMENT FOR USE WITH A STEERING WHEEL

Номер: US20140123474A1
Автор: Cho Man Ho
Принадлежит: Hwajin Co., Ltd.

A method of forming a heating element for use with a steering wheel includes (i) forming a first heating part of a heating element which is coated in a longitudinal direction of the rim along an inner diameter portion of the rim by continuously connecting loops having the same shape, (ii) forming a second heating part of the heating element which is coated in the longitudinal direction of the rim along an outer diameter portion of the rim by continuously connecting loops having the same shape, (iii) forming a third heating part of the heating element which is coated in the longitudinal direction of the rim by continuously connecting loops having the same shape between the first heating part and the second heating part; and (iv) adjusting an electrical resistance of the heating element according to a coating width or thickness of the conductive paste. 1. A method of forming a heating element for use with a steering wheel and heating an entire rim of the steering wheel to an uniform temperature , comprising:forming a first heating part of a heating element which is coated in a longitudinal direction of the rim along an inner diameter portion of the rim by continuously connecting loops having the same shape;forming a second heating part of the heating element which is coated in the longitudinal direction of the rim along an outer diameter portion of the rim by continuously connecting loops having the same shape;forming a third heating part of the heating element which is coated in the longitudinal direction of the rim by continuously connecting loops having the same shape between the first heating part and the second heating part; andwherein the first heating part, the second heating part and the third heating part comprise a conductive paste;adjusting an electrical resistance of the heating element according to a coating width or thickness of the conductive paste.2. The method of claim 1 , wherein adjusting the electrical resistance comprises forming the second ...

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Номер записи: 98
15-02-2018 дата публикации

Frequency- and Amplitude- Modulated Narrow-Band Infrared Emitters

Номер: US20180045861A1
Автор: Caldwell Joshua D., Currie Marc, Maria Jon-Paul, Vurgaftman Igor, Wheeler Virginia D.
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions. 1. An infrared (IR) emission device , comprising:a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, the polaritonic material structures comprising at least one ferroelectric material;an electrical power source configured to induce a strain in the ferroelectric material; anda heater configured to apply heat to at least one of the polaritonic material structures;wherein the heater comprises a layer of a doped semiconductor that is optically transparent in the IR;wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; andwherein a predetermined wavelength, a predetermined linewidth, or a predetermined amplitude of the IR emission from the at least one polaritonic material structure can be obtained by an application of a predetermined electrical bias from the electrical power source to the ferroelectric material.2. The IR emission device according to claim 1 , wherein the at least one polaritonic material structure comprises a polaritonic core having a ferroelectric material coating thereon.3. The ...

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Номер записи: 99
08-05-2014 дата публикации

SELF-CALIBRATING RESISTIVE FLEXURE SENSOR

Номер: US20140123766A1
Автор: Bach James Carter
Принадлежит: GENERAL ELECTRIC COMPANY

A variable resistance flexure sensor, and a system and method of controlling an appliance using a variable resistance flexure sensor are provided. The sensor can include a substrate having a flexible portion and a non-flexible portion. A plurality of electrically resistive elements, such as a first resistive element and a second resistive element, can be disposed on the substrate where at least one resistive element is exclusively within the non-flexible portion of the substrate and at least one resistive element is within the flexible portion of the substrate. The resistive element within the non-flexible portion of the substrate can act as a reference resistance for the flexure sensor and can be used as, or as part of, a biasing network for the electrically resistive element within the flexible portion of the substrate. The flexure sensor can be used within an appliance to detect various conditions such as temperature, moisture, etc. 1. A flexure sensing device comprising:a substrate having a flexible portion and a non-flexible portion;a first electrically resistive element formed on or within the flexible portion of the substrate, the first electrically resistive element having a variable electrical resistance dependent on a change in flexure of the flexible portion of the substrate; anda second electrically resistive element formed on or within the non-flexible portion of the substrate, the second electrically resistive element providing a reference resistance for the flexure sensing device.2. The device as in claim 1 , wherein the second electrically resistive element is disposed exclusively on or within the non-flexible portion of the substrate.3. The device as in claim 1 , wherein the second electrically resistive element is constructed using the same material and in essentially the same manner as the first electrically resistive element.4. The device as in claim 1 , wherein the non-flexible portion of the substrate is contiguous with the flexible portion.5. ...

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Номер записи: 100