FREQUENCY MIXING CIRCUIT AND METHOD FOR SUPPRESSING LOCAL OSCILLATION LEAKAGE IN FREQUENCY MIXING CIRCUIT

This application is a continuation of International Application No. PCT/CN2012/072243, filed on Mar. 13, 2012, which claims priority to Chinese Patent Application No. 201110083379.3, filed on Apr. 2, 2011, both of which are hereby incorporated by reference in their entireties.

The present invention relates to a mixed input signal and a local oscillation signal, and in particular, to a frequency mixing circuit and a method for suppressing local oscillation leakage in the frequency mixing circuit.

Frequency mixing, which is also called frequency conversion in terms of engineering, is a process of converting one value of a frequency of a signal into another value. A circuit that implements this frequency mixing function is called a frequency mixing circuit or frequency conversion circuit, and is also called a frequency mixer or frequency converter.

The frequency mixing circuit has been widely applied to communications engineering and wireless technologies. Generally, every wireless communications apparatus has a transmitter and a receiver, where the transmitter is configured to convert user data into a radio frequency signal for data transmission, and the receiver is configured to convert a received radio frequency signal into user data for data receiving.

The frequency mixing circuit plays an important role in transmitting/receiving a radio frequency signal, no matter in a transmitter or a receiver. In the transmitter, the frequency mixing circuit mixes an input signal (a baseband signal or an intermediate frequency signal) with a local oscillation signal to generate a to-be-transmitted radio frequency signal. In the receiver, the frequency mixing circuit mixes a radio frequency signal received by an antenna with a local oscillation signal to generate a baseband signal or an intermediate frequency signal.

The frequency mixing circuit is more widely applied especially in a superheterodyne receiver, for example, converting an amplitude-modulated 535 KHZ-1605 KHZ signal into a 465 KHZ intermediate frequency signal by an AM broadcast receiver, converting a modulated 48.5 M-870 M image signal into a 38 MHZ intermediate frequency image signal by a television receiver, and one intermediate frequency and double intermediate frequency in mobile communications.

A superheterodyne architecture is a main frequency-conversion manner of a current microwave transmitter, as shown in FIG. 1, which mixes information or an intermediate frequency modulation signal IF with a local oscillation signal Lo whose frequency is higher, and boosts a modulation signal carrier to a radio frequency RF.

A frequency of a signal carrier is converted from f_IFto f_RF, and their relation may be f_RF=f_LO+f_IFor f_RF=f_LO−f_IF. Due to nonlinearity of the frequency mixing circuit, frequency components of an output signal may be expressed as f_RF=n*f_LO+m*f_IF, where n and m are integers.

If f_RF=f_LO+f_IFis taken as an output signal of the frequency mixing circuit, generally, in addition to this signal, a spurious signal f_LOis further included at an RF outputting port of the frequency mixing circuit, that is, local oscillation leakage occurs.

To reduce the local oscillation leakage of the frequency mixing circuit, a filter may be used in the frequency mixing circuit. As shown in FIG. 2, by using frequency selectivity of the filter, a radio frequency signal can pass, and a local oscillation frequency is suppressed.

By adopting the foregoing solution to reduce the local oscillation leakage of the frequency mixing circuit, the filter needs to have better frequency selectivity, and the interconnection between the filter and a system is relatively complicated; and furthermore, performance of the filter is greatly affected by a process capability, so that implementability is poor. In addition, because the filter is an element that has frequency selectivity, and a frequency selectivity feature contradicts with wide area coverage of a frequency, this solution cannot satisfy a requirement of a broadband application of the frequency mixing circuit.

Embodiments of the present invention provide a frequency mixing circuit and a method for suppressing local oscillation leakage in the frequency mixing circuit, so as to effectively reduce local oscillation leakage by using a frequency mixing circuit whose structure is simpler and is easier to be implemented.

To achieve the foregoing objective, the embodiments of the present invention adopt the following technical solutions:

A frequency mixing circuit includes: a direct current bias circuit, where the direct current bias circuit includes a direct current bias voltage source used for reducing a local oscillation current.

A method for suppressing local oscillation leakage in a frequency mixing circuit, where the frequency mixing circuit includes a direct current bias circuit, and the method includes the following steps:

calculating a value of V_baccording to formulas

fLo(a1,a2,…,ak,VLo,VIF,Vb)Vb=0and2fLo(a1,a2,…,ak,VLo,VIF,Vb)2Vb>0,

where V_brepresents a voltage value of a direct current bias voltage source, a₁, a₂, . . . , a_krepresent coefficients of voltage values in a relation between a current and a voltage across a nonlinear resistor, k represents a non-zero natural number, V_Lorepresents a voltage value of a local oscillation voltage source, V_IFrepresents a voltage value of an intermediate frequency voltage source, and f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b) represents a value of a local oscillation current; and

setting a voltage value of a voltage source of the direct current bias circuit to V_b.

With the frequency mixing circuit and the method for suppressing local oscillation leakage in the frequency mixing circuit provided in the embodiments of the present invention, a direct current bias circuit that is simpler and is easier to be implemented is disposed in a frequency mixing circuit; when a voltage value of a bias voltage source of the direct current bias circuit changes, a value of a local oscillation current also changes correspondingly; and when the voltage value of the direct current bias voltage source is a certain specified value, the value of the local oscillation current can be decreased, thereby effectively reducing local oscillation leakage of the frequency mixing circuit.

The following clearly describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the embodiments to be described are merely a part rather than all of the embodiments of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

An embodiment of the present invention provides a frequency mixing circuit, and as shown in FIG. 3, the frequency mixing circuit includes a direct current bias circuit 1, where the direct current bias circuit 1 includes a direct current bias voltage source 2 used for reducing a local oscillation current.

This embodiment is applicable to a manner for implementing frequency mixing by using a field effect transistor FET shown in FIG. 4 and a manner for implementing frequency mixing by using a diode shown in FIG. 5.

The field effect transistor FET may be equivalent to a nonlinear resistor. A principle of the frequency mixing circuit shown in FIG. 3 is analyzed in the following. First, according to an existing method, structures shown in FIG. 4 and FIG. 5 may be equivalent to a circuit shown in FIG. 6.

As shown in FIG. 6, the frequency mixing circuit includes a local oscillation voltage source 3, an intermediate frequency voltage source 4, a direct current bias voltage source 5, a nonlinear resistor 6, source impedance Rs for generating an excitation signal, and load impedance Rl.

It is assumed that a relation between a voltage and a current across the nonlinear resistor 6 satisfies the following relation:

I=∑n=1n=kanVn,

k≦7 (1), where I represents a current across the nonlinear resistor 6, V represents a voltage across the nonlinear resistor 6, and a_nrepresents a coefficient that indicates a device feature.

A total loop voltage source Va=V_Lo*cos w_Lot+V_IF*cos w_IFt+Vb (2), where Va represents a voltage value of the total loop voltage source and includes a direct voltage and an alternating voltage, V_Lorepresents a voltage value of the local oscillation voltage source 3, V_IFrepresents a voltage value of the intermediate frequency voltage source 4, and V_brepresents a direct voltage value of the direct current bias voltage source 5.

Direct current values generated by the local oscillation voltage source 3, the intermediate frequency voltage source 4, and the direct current bias voltage source 5 may be obtained by substituting formula (2) to formula (1).

A direct current value generated by the direct current bias voltage source 5 is: I_dc=f_dc(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b), where I_dcrepresents the direct current value generated by the direct current bias voltage source 5, and a₁, a₂, . . . , a_krepresent coefficients of voltages across the nonlinear resistor 6 in formula (1).

A current generated by the local oscillation voltage source 3 is: I_Lo=f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b).

Multiple different voltage values V_bare set for the direct current bias voltage source 5, and I_dc, V_Lo, and V_IFthat correspond to each voltage value V_bmay be obtained through measurement. The coefficient a_nin the expression of the nonlinear resistor 6 may be obtained by using a data-fitting method.

The obtained coefficient a_nin the expression of the relation between the voltage and the current across the nonlinear resistor 6 is substituted to f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b). A value of V_bis calculated according to formulas

fLo(a1,a2,…,ak,VLo,VIF,Vb)Vb=0and2fLo(a1,a2,…,ak,VLo,VIF,Vb)2Vb>0,

where the V_bthat is obtained through calculation can make a value of |f_Lo| minimum. The |f_Lo| is minimum, that is, the local oscillation current is minimum. If a voltage value of an external direct current bias voltage source is set to the foregoing V_bthat is obtained through calculation, suppression of the local oscillation leakage in the frequency mixing circuit can be implemented.

With the frequency mixing circuit provided in this embodiment, a direct current bias circuit that is simpler and is easier to be implemented is disposed; when a voltage value of a direct current bias voltage source changes, a value of a local oscillation current also changes correspondingly; and when the voltage value of the direct current bias voltage source is a certain specified value, the value of the local oscillation current can be reduced, thereby effectively reducing local oscillation leakage of the frequency mixing circuit.

As an implementation manner of this embodiment, the frequency mixing circuit provided in this embodiment is also applicable to a case where a radio frequency signal is mixed with a local oscillation signal to output an intermediate frequency signal.

As another implementation manner of this embodiment, the direct current bias circuit 1 may also be disposed on a local oscillation signal side or a radio frequency signal side.

As an improvement to this embodiment, an embodiment of the present invention provides another frequency mixing circuit. As shown in FIG. 7, the frequency mixing circuit may include an intermediate frequency inputting port 7 used for inputting an intermediate frequency (IF, Intermediate Frequency) signal, a local oscillation inputting port 8 used for inputting a local oscillation (Lo, Local Oscillation) signal, and a radio frequency outputting port 9 used for outputting a radio frequency (RF, Radio Frequency) signal.

A first direct current bias circuit 10 and a second direct current bias circuit 11 are disposed on the side of the intermediate frequency inputting port 7, where the first direct current bias circuit 10 includes a direct current bias voltage source 12 that is used for reducing a local oscillation current and is marked as Vb1, and the second direct current bias circuit 11 includes a direct current bias voltage source 13 that is used for reducing the local oscillation current and is marked as Vb2.

Because two direct current bias circuits are disposed, a problem of local oscillation leakage in the frequency mixing circuit can be effectively solved.

The frequency mixing circuit further includes: a 90-degree bridge 14 and an orthogonal frequency mixer 15, where the orthogonal frequency mixer 15 includes a first frequency mixing unit circuit 16, a second frequency mixing unit circuit 17, and a combiner 18.

An input signal passes through the 90-degree bridge 14 to generate a first input signal and a second input signal, where the first input signal and the second input signal are transferred to the first frequency mixing unit circuit 16 and the second frequency mixing unit circuit 17 of the orthogonal frequency mixer 15, respectively; and each of the first input signal and the second input signal is mixed with a local oscillation signal, and an output signal is generated after the mixed signals pass through the combiner 18.

The frequency mixing circuit in this embodiment is applicable to a manner for implementing frequency mixing by using a field effect transistor FET shown in FIG. 4, and is also applicable to a manner for implementing frequency mixing by using a diode shown in FIG. 5.

The field effect transistor FET may be equivalent to a nonlinear resistor. A principle of the frequency mixing circuit shown in FIG. 3 is analyzed in the following, as shown in FIG. 6.

It is assumed that a relation between a voltage and a current across a nonlinear resistor satisfies the following relation:

I=∑n=1n=kanVn,

k≦7 (1), where I represents a current across the nonlinear resistor, V represents a voltage across the nonlinear resistor, and a_nrepresents a coefficient that indicates a device feature. A total loop voltage source Va=V_Lo*cos w_Lot+V_IF*cos w_IFt+Vb (2), where Va represents a voltage value of the total loop voltage source, V_Lo*cos w_Lot represents a voltage value of a local oscillation voltage source, V_IF*cos w_IFt represents a voltage value of an intermediate frequency voltage source, and Vb represents a voltage value of a direct current bias voltage source.

Current values generated by the local oscillation voltage source, the intermediate frequency voltage source, and the direct current bias voltage source may be obtained by substituting formula (2) to formula (1).

A current value generated by the direct current bias voltage source is: I_dc=f_dc(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b), where I_dcrepresents the current value generated by the direct current bias voltage source, and a₁, a₂, . . . , a_krepresent coefficients of voltages across the nonlinear resistor in formula (1).

A current generated by the local oscillation voltage source is: I_Lo=f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b).

Multiple voltage values V_bare set for the bias voltage source, and I_dcthat corresponds to each voltage value V_bmay be obtained through measurement. In combination with constants V_Loand V_IF, the coefficient a_nin the expression of the nonlinear resistor may be obtained by using a data-fitting method.

The obtained coefficient a_nin the expression of the nonlinear resistor is substituted to f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b).

A value of V_bis calculated according to formulas

fLo(a1,a2,…,ak,VLo,VIF,Vb)Vb=0and2fLo(a1,a2,…,ak,VLo,VIF,Vb)2Vb>0,

where the V_bthat is obtained through calculation can make a value of |f_Lo| minimum. The |f_Lo| is minimum, that is, a local oscillation current is minimum. If a voltage value of an external direct current bias voltage source is set to the foregoing V_bthat is obtained through calculation, suppression of the local oscillation leakage in the frequency mixing circuit can be implemented.

With the frequency mixing circuit provided in this embodiment, a direct current bias circuit that is simpler and is easier to be implemented is disposed; when a voltage value of a bias voltage source of the direct current bias circuit changes, a value of a local oscillation current also changes correspondingly; and when the voltage value of the direct current bias voltage source is a certain specified value, the value of the local oscillation current can be reduced, thereby effectively reducing local oscillation leakage of the frequency mixing circuit.

The frequency mixing circuit is implemented by adopting the foregoing implementation manner, and suppression of an image frequency is implemented by adopting an orthogonal phase cancellation technology, so that single-sideband up conversion may be implemented.

As an improvement to this embodiment, to make input power of an intermediate frequency port and input power of a local oscillation port of the frequency mixing circuit to be constants, as shown in FIG. 7, a level control circuit may further be disposed at each of the intermediate frequency port and the local oscillation port of the frequency mixing circuit, where output power of the level control circuit is a constant.

The foregoing solution can make the input power of the intermediate frequency port and the input power of the local oscillation port of the frequency mixing circuit to be constants, thereby making a value of V_Loand a value of V_IFto be constants.

To facilitate measurement, as another improvement to this embodiment, the direct current bias circuit may further include a galvanometer used for measuring a bias current of the direct current bias circuit, as shown in FIG. 7.

Temperature drift may cause change of an internal junction potential of a device, which is equivalent to that an additional voltage source that drifts with temperature is added to Vb. The voltage source is set to Voffset. If an offset voltage at normal temperature is maintained in a high or low temperature environment, an actual equivalent bias voltage is Vb+Voffset, which may affect the effect of suppressing local oscillation leakage in the case of temperature drift.

Because a relation among a direct current bias current I, a direct current bias voltage Vb, and a local oscillation current Ilo remains unchanged while Vb is a variable, only if I is constant, the local oscillation current can be stable, and the effect of suppressing local oscillation leakage can remain unchanged.

As shown in FIG. 7, the frequency mixing circuit includes two direct current bias circuits provided in the foregoing embodiment, which are marked as a first direct current bias circuit and a second direct current bias circuit. A bias voltage source in the first direct current bias circuit is marked as Vb1, and a bias voltage source in the second direct current bias circuit is marked as Vb2. Values of direct current bias currents of the first direct current bias circuit and the second direct current bias circuit at normal temperature are recorded as I1_normaland I2_normal. When temperature deviates from the normal temperature, that is, the temperature becomes high or low, direct current bias voltages Vb1 and Vb2 are adjusted, and differences between currents actually measured in cases of high and low temperature and direct current bias currents at the normal temperature, that is, a difference between I1 and I1_normaland a difference between I2 and I2_normalare negatively fed back to drive the direct current bias voltages Vb1 and Vb2, so that the impact imposed on the effect of suppressing local oscillation leakage due to the change of high or low temperature is reduced.

It is assumed that a time step of an adjustment interval is u, u, that is, a coefficient updating step, may be preset as required, an error of a direct current bias current is error, and an expression of the error of the direct current bias circuit may be: error−I−I_normal(4).

A feedback iterative formula of a direct current bias voltage is: V_b(n)=V_b(n−1)+u*error (5).

That is, V_b(n)=V_b(n−1)+u*(I−I_normal), where V_b(n) represents a voltage value of the direct current bias voltage source in an n^thtime period, V_b(n−1) represents a voltage value of the direct current bias voltage source in an (n−1)^thtime period, u represents a coefficient updating step, I represents a bias current value measured in the n^thtime period, and I_normalrepresents a bias current reference value.

As a preferred implementation manner of this embodiment, one capacitor may further be disposed between the 90-degree bridge and the first frequency mixing unit circuit, one capacitor may further be disposed between the 90-degree bridge and the second frequency mixing unit circuit, one capacitor may further be disposed between the first frequency mixing unit circuit and the combiner, and one capacitor may further be disposed between the second frequency mixing unit circuit and the combiner.

Coupling of direct currents between the first frequency mixing unit circuit and the second frequency mixing unit circuit that are orthogonal is avoided by using a feature that the capacitor can block a direct current.

To better suppress local oscillation leakage of the frequency mixing circuit, the first frequency mixing unit circuit and the second frequency mixing unit circuit may also be frequency mixers having the same resistivity.

The frequency mixing circuit in this embodiment may also be equivalent to the circuit shown in FIG. 6, and therefore, a value of a local oscillation current can be reduced, thereby effectively reducing the local oscillation leakage of the frequency mixing circuit.

With the frequency mixing circuit provided in this embodiment of the present invention, that a microwave filter is used at an outputting port of an up converter is avoided, and the difficulty of implementation is lowered, so that a frequency mixer may be monolithically integrated with another device. Furthermore, in the solution of this embodiment of the present invention, a device with better frequency selectivity is not used, thereby improving the frequency extension capability of the up converter.

An embodiment of the present invention provides a method for suppressing local oscillation leakage in a frequency mixing circuit, where the frequency mixing circuit includes a direct current bias circuit, and as shown in FIG. 8, the method includes the following steps:

801: Calculate a value of V_bby using a computer program according to formulas

fLo(a1,a2,…,ak,VLo,VIF,Vb)Vb=0and2fLo(a1,a2,…,ak,VLo,VIF,Vb)2Vb>0,

where V_brepresents a voltage value of a direct current bias voltage source, a₁, a₂, . . . , a_krepresent coefficients of voltage values in a relation between a current and a voltage across a nonlinear resistor, k represents a non-zero natural number, V_Lorepresents a voltage value of a local oscillation voltage source, V_IFrepresents a voltage value of an intermediate frequency voltage source, and f_Lorepresents a value of a local oscillation current.

802: Set a voltage value of a voltage source of the direct current bias circuit to V_bby using a computer program.

With the method for suppressing local oscillation leakage in a frequency mixing circuit provided in this embodiment, a direct current bias circuit that is simpler and is easier to be implemented is disposed in the frequency mixing circuit; when a voltage value of a bias voltage source of the direct current bias circuit changes, a value of a local oscillation current also changes correspondingly; and when the voltage value of the direct current bias voltage source is a certain specified value, the value of the local oscillation current can be reduced, thereby effectively reducing local oscillation leakage of the frequency mixing circuit.

As an improvement to this embodiment, an embodiment of the present invention provides another method for suppressing local oscillation leakage in a frequency mixing circuit, where the frequency mixing circuit includes a direct current bias circuit, and as shown in FIG. 9, the method includes the following steps:

The frequency mixing circuit in this embodiment is applicable to a manner for implementing frequency mixing by using a field effect transistor FET, and is also applicable to a manner for implementing frequency mixing by using a diode.

The field effect transistor FET may be equivalent to a nonlinear resistor.

901: Calculate a formula for calculating a value of a local oscillation current, where only the voltage value V_bof a direct current bias voltage source in the formula is a variable, that is, calculate I_Lo=f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b).

It is assumed that a relation between a voltage and a current across the nonlinear resistor satisfies the following relation:

I=∑n=1n=kanVn,

k≦7 (1), where I represents a current across the nonlinear resistor, V represents a voltage across the nonlinear resistor, and a_nrepresents a preset coefficient.

A total loop voltage source Va=V_Lo*cos w_Lot+V_IF*cos w_IFt+Vb (2), where Va represents a voltage value of the total loop voltage source, V_Lo* cos w_Lot represents a voltage value of a local oscillation voltage source, V_IF*cos w_IFt represents a voltage value of an intermediate frequency voltage source, and Vb represents a voltage value of a direct current bias voltage source.

Current values generated by the local oscillation voltage source, the intermediate frequency voltage source, and the direct current bias voltage source may be obtained by substituting formula (2) to formula (1).

A current value generated by the direct current bias voltage source is: I_dc=f_dc(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b), where I_dcrepresents the current value generated by the direct current bias voltage source, and a₁, a₂, . . . , a_krepresent coefficients of voltages across the nonlinear resistor in formula (1).

A current generated by the local oscillation voltage source is: I_Lo=f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b).

Multiple voltage values V_bare set for the bias voltage source, and I_dc, I_Lo, and V_IFthat correspond to each voltage value V_bmay be obtained through measurement. The coefficient a_nin the expression of the nonlinear resistor may be obtained by using a data-fitting method.

The formula for calculating the value of the local oscillation current I_Lo=f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b) may be obtained by substituting the obtained coefficient a_nin the expression of the nonlinear resistor to f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b). Only the voltage value V_bof the direct current bias voltage source in the formula is a variable.

902: Calculate a value of V_baccording to formulas

fLo(a1,a2,…,ak,VLo,VIF,Vb)Vb=0and2fLo(a1,a2,…,ak,VLo,VIF,Vb)2Vb>0,

where V_brepresents the voltage value of the direct current bias voltage source, a₁, a₂, . . . , a_krepresent coefficients of voltage values in a relation between a current and a voltage across the nonlinear resistor, k represents a non-zero natural number, V_Lorepresents the voltage value of the local oscillation voltage source, V_IFrepresents the voltage value of the intermediate frequency voltage source, and f_Lo(a₁, a₂, . . . , a_k, V_Lo, V_IF, V_b) represents the value of the local oscillation current.

This step may be implemented by using a computer program, a manual manner, or a single-chip microcomputer.

903: Record a bias current value I_normalwhen the voltage value of the voltage source of the direct current bias circuit is set to V_b.

904: Obtain a bias current value I of the direct current bias circuit in a current time period.

905: Calculate V_b(n)=V_b(n−1)+u*(I−I_normal), where V_b(n) represents a voltage value of the direct current bias voltage source in an n^thtime period, V_b(n−1) represents a voltage value of the direct current bias voltage source in an (n−1)^thtime period, u represents a coefficient updating step, I represents a bias current value measured in the n^thtime period, and I_normalrepresents a bias current reference value.

906: Reset the voltage value of the bias voltage source of the direct current bias circuit in the current time period to V_b(n).

With the method for suppressing local oscillation leakage in a frequency mixing circuit provided in this embodiment, a direct current bias circuit that is simpler and is easier to be implemented is disposed in the frequency mixing circuit; when a voltage value of a bias voltage source of the direct current bias circuit changes, a value of a local oscillation current also changes correspondingly; and when the voltage value of the direct current bias voltage source is a certain specified value, the value of the local oscillation current can be reduced, thereby effectively reducing local oscillation leakage of the frequency mixing circuit.

Through the foregoing description of the embodiments, persons skilled in the art may clearly understand that the present invention may be implemented by software plus necessary universal hardware, and definitely may also be implemented by hardware, but in many cases, the software implementation manner is preferred. Based on such understanding, the technical solutions of the present invention essentially, or the part contributing to the prior art may be implemented in the form of a software product. The computer software product is stored in a readable storage medium, for example, a floppy disk, a hard disk, or an optical disk of a computer, and includes several instructions for instructing a computer device (which may be a personal computer, a server, a network device, and so on) to execute the methods described in the embodiments of the present invention.

The foregoing description is merely about exemplary embodiments of the present invention, but is not intended to limit the protection scope of the present invention. Any variation or replacement readily figured out by persons skilled in the art within the technical scope disclosed in the present invention shall all fall within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.