Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 4. Отображено 4.
10-10-2000 дата публикации

Semiconductor IC device having a control register for designating memory blocks for erasure

Номер: US0006130836A1
Автор: Matsubara; Kiyoshi, Yashiki; Naoki, Baba; Shiro, Ito; Takashi, Mukai; Hirofumi, Sato; Masanao, Terasawa; Masaaki, Kuroda; Kenichi, Shiba; Kazuyoshi
Принадлежит: Hitachi, Ltd., Hitachi VSLI Engineering Corp.

A semiconductor integrated circuit device having a processing unit and a memory which stores data to be processed by the processing unit and which provides data to the processing unit through the data bus in response to accessing instructions from the processing unit through the address bus. The memory has a plurality of memory blocks each of which has a plurality of electrically programmable nonvolatile memory cells arranged in rows and columns in which each nonvolatile memory cell is coupled to one of a plurality of word lines and one of a plurality of data lines of the memory. The memory blocks formed can be facilitated with different memory capacities, including through controlling the number of rows or columns of memory cells associated therewith. Sources of all of the memory cells within each memory block are connected to a single source line which is fed by a predetermined voltage from a corresponding one of plural source voltage control circuits, for flash erasing the memory cells ...

Подробнее
Номер записи: 1
12-12-2000 дата публикации

Semiconductor memory device and defect remedying method thereof

Номер: US0006160744A1
Автор: Kajigaya; Kazuhiko, Miyazawa; Kazuyuki, Tsunozaki; Manabu, Oshima; Kazuyoshi, Yamazaki; Takashi, Sakai; Yuji, Sawada; Jiro, Yamaguchi; Yasunori, Matsumoto; Tetsurou, Udo; Shinji, Yoshioka; Hiroshi, Saito; Hirokazu, Takano; Mitsuhiro, Morino; Makoto, Miyatake; Sinichi, Miyamoto; Eiji, Kasama; Yasuhiro, Endo; Akira, Hori; Ryoichi, Etoh; Jun, Horiguchi; Masashi, Ikenaga; Shinichi, Kumata; Atsushi
Принадлежит: Hitachi, Ltd., Hitachi VSLI Engineering Corp.

Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. Thanks to this structure in which the peripheral circuits are arranged at the center portion of the chip, the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

Подробнее
Номер записи: 2
30-11-1993 дата публикации

Semiconductor device and an electronic device with the semiconductor devices mounted thereon

Номер: US0005266834A1
Автор: Nishi; Kunihiko, Tanimoto; Michio, Yasuhara; Toshihiro, Tabata; Katsuhiro, Yoshikawa; Yasuhiro, Akima; Isao, Kunito; Souichi, Nosaka; Toshio, Nakamura; Hideaki
Принадлежит: Hitachi Ltd., Hitachi VSLI Engineering Corp.

A package is provided for achieving higher packing density and higher circuit integration of memories, in particular, a structure is provided having a plurality of thin, surface mount packages which are stacked up. Each of the laminated packages includes a semiconductor pellet, leads fixed to the front surface of the pellet, a radiating plate fixed to the rear surface of the same, and a resin mold member. To achieve a stabilized laminated structure, the mold member is shaped into a convex form on the front side of the pellet and into a concave form on the rear side of the same, so that the concave portion of one package can engage with the convex portion of another package.

Подробнее
Номер записи: 3
29-06-1999 дата публикации

Nonvolatile semiconductor memory device

Номер: US0005917752A1
Автор: Seki; Koichi, Wada; Takeshi, Muto; Tadashi, Shoji; Kazuyoshi, Kubota; Yasurou, Kume; Hitoshi
Принадлежит: Hitachi, Ltd., Hitachi VSLI Engineering Corp.

Within an EEPROM having a memory array in which the electrically erasable nonvolatile storage elements are arranged in a matrix form, an erasing control circuit is included, which performs at least the read out operation one time on the corresponding memory cells after an erasing operation is performed in connection therewith in accordance with externally supplied erasing operation instructions. The erasing operation is automatically performed by the internal erasing control circuit while the EEPROM is electrically isolated from the microprocessor in response to instructions from the microprocessor. The control by the microprocessor requires only a slightly short period of time during which the erasing commencement is instructed while the EEPROM remains in the system during the erasing operation. In one aspect of the present invention, a Vcc power source is applied to a source region or a drain region of each nonvolatile semiconductor memory cell, and an erasure voltage having a polarity ...

Подробнее
Номер записи: 4