29-08-2013 дата публикации
Номер: US20130226268A1
The present invention relates inter alia to devices comprising quantum dots, ionic species, and further organic functional materials, their preparation and use. 118-. (canceled)19. A light emitting electrochemical cell (QD-LEC) comprising at least one quantum dot , at least one ionic compound , and at least one small molecule organic functional material selected from host materials , fluorescent emitters , phosphorescent emitters , hole transport materials (HTMs) , hole injection materials (HIMs) , electron transport materials (ETMs) , and electron injection materials (EIMs).20. The QD-LEC according to claim 19 , wherein the at least one small molecule organic functional material is a fluorescent emitter.21. The QD-LEC according to claim 19 , wherein the at least one small molecule organic functional material is a phosphorescent emitter.22. The QD-LEC according to comprising(1) a first electrode;(2) a second electrode; and(3) an emissive layer (EML) comprising at least one quantum dot, at least one ionic compound, and at least one small organic functional material positioned between the first and second electrode.23. The QD-LEC according to claim 19 , wherein the quantum dot is selected from Group II-VI claim 19 , Group III-V claim 19 , Group IV-VI and Group IV semiconductors claim 19 , or a combination thereof.24. The QD-LEC according to claim 19 , wherein the quantum dot is ZnO claim 19 , ZnS claim 19 , ZnSe claim 19 , ZnTe claim 19 , CdS claim 19 , CdSe claim 19 , CdTe claim 19 , HgS claim 19 , HgSe claim 19 , HgTe claim 19 , MgS claim 19 , MgSe claim 19 , GeS claim 19 , GeSe claim 19 , GeTe claim 19 , SnS claim 19 , SnSe claim 19 , SnTe claim 19 , PbO claim 19 , PbS claim 19 , PbSe claim 19 , PbTe claim 19 , GaN claim 19 , GaP claim 19 , GaAs claim 19 , GaSb claim 19 , InN claim 19 , InP claim 19 , InAs claim 19 , InSb claim 19 , AlN claim 19 , AlP claim 19 , AlAs claim 19 , AlSb claim 19 , GaN claim 19 , GaP claim 19 , GaAs claim 19 , GaSb claim 19 , or a ...
Подробнее