19-01-2017 дата публикации
Номер: US20170018450A1
The present invention provides a procedure of processing a workpiece such as backside grinding of a device wafer and an apparatus designed for the procedure. The procedure comprises (1) preparing a bonded stack comprising (e.g. consisting of) a carrier layer, a workpiece layer, and an interposer layer therebetween; (2) processing the workpiece layer; and (3) delivering a gas jet at the junction between two adjacent layers in the stack to separate or debond the two adjacent layers. Technical merits of the invention include enhanced efficiency, higher wafer throughput, reduced stress on workpiece surface, and uniformly distributed stress and avoidance of device wafer breakage and internal device damage, among others. 1. A procedure of processing a workpiece , comprising (1) preparing a bonded stack comprising a carrier layer , a workpiece layer , and an interposer layer therebetween; (2) processing the workpiece layer; and (3) delivering a gas jet at the junction between two adjacent layers in the stack to separate or debond said two adjacent layers.2. The procedure according to claim 1 , wherein said two adjacent layers are the carrier layer and the interposer layer.3. The procedure according to claim 1 , wherein said carrier layer is made of a material selected from glass claim 1 , silicon claim 1 , ceramics claim 1 , sapphire claim 1 , quartz claim 1 , polysilicon claim 1 , silicon dioxide claim 1 , silicon-germanium claim 1 , silicon (oxy)nitride claim 1 , Gallium Nitride (GaN) claim 1 , gallium arsenide (GaAs) claim 1 , gallium phosphide (GaP) claim 1 , gallium arsenide phosphide (GaAsP) claim 1 , silicon carbide (SiC) claim 1 , metals such as copper claim 1 , aluminum claim 1 , gold claim 1 , tungsten claim 1 , tantalum; low k dielectrics claim 1 , polymer dielectrics claim 1 , and metal nitrides and silicides.4. The procedure according to claim 1 , further comprising a step of pretreating the bonding surface of the carrier layer before the step of preparing ...
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