СОСТАВЫ ДЛЯ ПРИПОЯ

Изобретение может быть использовано при получении паяного соединения бессвинцовым припоем, в частности, при изготовлении печатных плат. Припой содержит смесь порошковых компонентов, один из которых представляет собой первый сплав для припоя, а второй порошковый компонент – второй сплав для припоя или металл. Припой содержит дополнительный порошковый компонент, выбранный из группы, включающей карбиды, нитриды, оксиды металлов и углеродные нанотрубки. В качестве первого и второго сплавов для припоя используют несмешиваемые при нагреве сплавы, температура плавления которых различается в пределах 10°С. Припой обладает хорошей термоусталостной долговечностью и низкой высокотемпературной ползучестью, а также высокой пластичностью и тепло- и электропроводностью. 7 н. и 13 з.п. ф-лы, 16 ил.

АВТОМОБИЛЬНЫЙ ТОПЛИВОПРОВОД ИЗ НЕРЖАВЕЮЩЕЙ СТАЛИ

СПОСОБ СОЕДИНЕНИЯ ДВУХ МЕТАЛЛИЧЕСКИХ ДЕТАЛЕЙ ПОСРЕДСТВОМ ПАЙКИ

... 1. Способ соединения двух металлических деталей (12, 14) посредством пайки, включающий в себя этапы, на которых формируют, посредством металлической присадки, соединительный шов (13) между двумя соединяемыми поверхностями (12a, 14a) и галтель (15), отличающийся тем, что химический состав присадочного металла для формирования галтели (15) отличается от состава соединительного шва (13) таким образом, что обладает большей вязкостью.2. Способ по п. 1, в котором соединительный шов (13) является капиллярным соединением.3. Способ по п. 1, в котором температура пайки галтели (15) меньше температуры ликвидуса присадочного металла соединительного шва (13).4. Способ по п. 1, в котором детали выполнены из суперсплава на основе никеля или кобальта.5. Способ по п. 4, в котором присадочный металл для образования соединительного шва (13) является сплавом на основе никеля или кобальта, соответственно, по меньшей мере, с расплавляемым составом.6. Способ по п. 5, в котором расплавляемый состав является, по ...

Припой для пайки инструмента

Изобретение относится к пайке, в частности к составам припоя для пайки твердых сплавов и других материалов при производстве составного инструмента. Цель изобретения - повышение эксплуатационной стойкости инструмента за счет предотвращения испарения компонентов припоя при термовакуумной обработке после пайки. Припой имеет следующий состав, мас.%:марганец 20-30,5 никель 5-8 железо 1-8 хром 1-6 кремний 0,2-1,0 кальций 0,2-1,0 титан 0,05-5,0 медь остальное. Температура пайки 1000°С. Инструмент после пайки подвергается термовакуумной обработке. При этом прочность паяного соединения на срез в зависимости от используемого флюса составляет 31-32 кгс/мм2(Ф 100), 22-23 кгс/мм2(KBF4+аргон), 23-28 кгс/мм2(вакуум 10-2мм рт.ст). Разрушение происходит по шву без трещин. Стойкость борфрез при обработке стали 12Х18Н9Т составляет 543 мин при съеме 0,001 мм поверхности обрабатываемой детали. 1 табл.

WERKZEUGTEIL.

Bonddraht für Halbleitervorrichtung

Bonddraht für eine Halbleitervorrichtung, wobei der Bonddraht aufweist:ein Cu-Legierungskernmaterial; undeine auf einer Oberfläche des Cu-Legierungskernmaterials gebildete Pd-Überzugschicht, wobeibei Messung von Kristallorientierungen auf einem Querschnitt des Kernmaterials in senkrechter Richtung zu einer Drahtachse des Bonddrahts eine Kristallorientierung <100> im Winkel von höchstens 15 Grad zu einer Drahtachsenrichtung einen Anteil von mindestens 30 % unter Kristallorientierungen in Drahtachsenrichtung hat,eine mittlere Kristallkorngröße im Querschnitt des Kernmaterials in senkrechter Richtung zur Drahtachse des Bonddrahts 0,9 µm oder mehr und 1,5 µm oder weniger beträgt, undder Bonddraht ein oder mehrere Elemente enthält, die aus Ga und Ge ausgewählt sind, und eine Konzentration der Elemente insgesamt 0,011 bis 1,5 Masse-% relativ zum gesamten Draht beträgt.

Hartlotlegierungen

ELECTRON-BEAM WELDING PROCESS FOR COPPER

VORRICHTUNG UND VERFAHREN BETREFFEND ELEKTROCHEMISCHE MIGRATION

Ausführungsformen der vorliegenden Erfindung stellen ein Verfahren (1000) zum Zusammenbauen einer elektrischen Schaltung bereit, die einen oder mehrere elektrische Kupferleiter umfasst, wobei das Verfahren das Beschichten (1010) einer Oberfläche des einen oder der mehreren Leiter mit einer Schicht umfasst, die Zinn umfasst; und das Aufbringen (1020) von Lötmittel auf mindestens einen Abschnitt des einen oder der mehreren elektrischen Leiter umfasst, wobei das Lötmittel Zinn und Kupfer umfasst.

Stoffschlüssige Verbindung zwischen Aluminium und Kupfer sowie Verfahren zur Herstellung derselben

Stoffschlüssige Verbindung zwischen Aluminium und Kupfer, umfassend einen Schichtverbund aus einem Kupferelement (2), einer Aluminiumschicht (1) und einer auf dieser aufliegenden Kupferschicht (3) in der genannten Reihenfolge, dadurch gekennzeichnet, dass die Verbindung durch mindestens eine Schweißnaht (4) auf der Kupferschicht umfasst, wobei sich die Schweißnaht durch die Kupferschicht und die Aluminiumschicht in das Kupferelement erstreckt.

Verfahren zur Herstellung einer Baugruppe aus einer Ankerplatte und einem Stößel

Elektrostatische Haltevorrichtung mit einer Keramik-Elektrode und Verfahren zur Herstellung einer solchen Haltevorrichtung

Haltevorrichtung (100), die zur elektrostatischen Halterung eines Bauteils (1), insbesondere eines Siliziumwafers, eingerichtet ist, umfassend:- mindestens einen Grundkörper (10, 10A, 10B), der aus einer ersten Platte (11A) und einer zweiten Platte (12) zusammengesetzt ist, wobei die erste Platte (11A) an einer Oberseite (10A) des Grundkörpers (10, 10A, 10B) angeordnet ist und die zweite Platte (12) aus einem elektrisch isolierenden Material hergestellt ist,- eine Vielzahl von vorstehenden, oberen Noppen (13A), die an der Oberseite (10A) des Grundkörpers (10, 10A, 10B) angeordnet sind und eine Auflagefläche für das Bauteil (1) bilden, und- eine erste Elektrode, die zur Beaufschlagung mit einer elektrischen Haltespannung angeordnet ist, wobei- die erste Platte (11A) aus einer elektrisch leitfähigen, Silizium enthaltenden Keramik hergestellt ist und die erste Elektrode bildet,- eine obere Isolationsschicht (15A) die Oberseite (10A) des Grundkörpers (10, 10A, 10B) mit den oberen Noppen (13A ...

Mfr. or repair of turbine blade tips using laser beam weld-coating and blade master alloy metal powder filler

The method is used to make or repairs turbine blades. Laser beam weld-coating is employed, using a metal powder filler. The novel approach involves forming a strip of metal sheet (3) into a fork-like shape. This is fitted tightly around the contour (4) of the blade tip (6) with the aid of an externally-surrounding encapsulation of injection-moulded plastic (5). This locks around the contour, faithful to its profile, forming a mould in the manner of shuttering. The strip projects beyond both encapsulation and blade tip. The internal region (8) rising above the tip, is completely filled. Also claimed are the corresponding mould, as described, and the method of making it. The flexible metal strip is formed about the tip of the blade and pressed on using an upper lamellar diaphragm (22). A contour-fitting lower lamellar diaphragm is set near the root of the blade, completing a closed cavity between upper and lower diaphragms. The plastic is then injected, exerting pressure on the lower regions ...

VERFAHREN ZUM REDUZIEREN VON METALLOXIDPULVER UND ANBRINGEN DAVON AUF EINER WÄRMEÜBERTRAGUNGSOBERFLÄCHE UND WÄRMEÜBERTRAGUNGSOBERFLÄCHE

Soldering Material for Soldering Materials Difficult to Wet

... 1,189,375. Soldering. JURID WERKE G.m.b.H. 24 April, 1967 [25 May, 1966], No. 18831/67. Heading B3R. Solder material comprising components in particle form for soldering porous materials, e.g. those obtained by powder metallurgy or cermets includes a first component consisting of one or more metals fusible in a first temperature range and a second component including a material selected from copper phosphide, zinc iodide, silver chloride, lead bromide and copper bromide fusible in a second temperature range higher than the first. The solder material may be pre-pressed or pre-sintered and the first component may include platinum, gold, rhodium, silver, copper, zinc, tin, cadmium, lead, brass or bronze. Phosphorus, silicon or other fluxes may be included to improve wettability. The second component may include iron, cobalt, nickel, tungsten or molybdenum. In one example, for soldering sintered porous iron to a steel support a powder comprising Cu 39À85%, Sn 10À0%, P 0À15%, Cu 3 P 30À0%, Ni ...

BRAZING ALLOY COMPOSITION

... 1360890 Copper-nickel brazing alloy; joining compacts during sintering A JOHNSON & CO Inc 17 May 1972 [17 May 1971] 23244/72 Headings C7A and C7D [Also in Division B3] A brazing alloy, especially for joining pressed powder metal parts during sintering thereof, comprises: - and the balance, apart from impurities being Ni. The brazing alloy may be provided as a powder mixture of (A) Cu 3À5-70%, Ni 3-20% and Mn balance and (B) Si 2À5-5À5%, B 0À75-5À25% and Ni balance in the range 50%A and 50%B to 75%A and 25%B. Examples refer to graphite and iron powder compacts being sintered and joined in a reducing atmosphere. The parts being joined may both be powder compacts or such a compact may be joined to a wrought body. The brazing alloy may be used as a pressed shim or collar for joining the iron compacts together during sinte ring.

SOLDERING FOIL

A copper alloy solder

Copper alloy solders are disclosed which contain 0.5 to 20% by weight of cobalt. The copper and cobalt may be arranged in heterogeneous phases.

Improvements in or relating to brazing alloys

Stainless steel and superalloys are brazed with a Cu-Mn brazing alloy (containing not less than 15% Cu) to which has been added 3-25% Ni. The Mn content of the Cu-Mn alloy is preferably 10-70%. The resultant alloy may also contain up to 25% Co, up to 0.5% B, up to 5% Ge, up to 3% Si, up to 3% Fe. Specification 996,178 is referred to.

Apparatus and method relating to electrochemical migration

Improvements in copper base brazing alloys and mixtures thereof with other alloys

A copper base brazing alloy has the following composition by weight:- .Ni............20 to 40% .In............0 to 10% .Si............0 to 4% .Cu............balance, Si being 4% with In absent, and In 2 to 10% when Si is 0 to 3% A preferred alloy consists of 35-38% Ni, 4-6% In and 61-56% Cu. A mixture of powdered alloys for brazing may consist of 75 to 95% of the above alloy, up to 24% of a nickel base alloy containing 1.5-2.4% Si and 0.5-1.8% B, and up to 15% of a nickel base alloy containing 3-5% Si, 2.5-3.5% B and 6-8% Cr. The mixture may be used for brazing a high temperature nickel base bearing alloy having the following composition by weight:- .C ............0.06 to 0.20% .Cr............18 to 20% .Co............9 to 12% .Mo..........9 to 10.5% .Ti............3 to 3.3% .Al............1.5 to 1.9% .B ............0 to 0.02% .Ni............balance ...

Improvements in and relating to the metallizing of ceramic or cermet materials

A ceramic or cermet body is coated with a ternary alloy of substantially 1-10 per cent Ti, 1-30 per cent Sn, 60-98 per cent Cu. The coating will also serve to bond to the ceramic or cermet (e.g. almumina, steatite, zircon), a metal member (e.g. steel, Cu) of similar thermal expansion. The coating material is applied to the ceramic surface as a thin layer of homogeneous alloy in solid or powder form or a mixture of the powdered metals, and fixed at 850 DEG -1150 DEG C. in a dry oxygen-free atmosphere. If desired a Ni, Cu or Cd coat may then be applied and the thus coated ceramic be brazed by conventional methods (e.g. using Ag brazing powder) to a metal member. Specification 810,774 is referred to.

Braze joints with a dispersed particulate microstructure

Method of producing a vehicle glass assembly

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE PRODUCTION OF FILLER RODS ON COPPER BASIS

ALUMINOTHERMISCHES REAKTIONSGEMISCH AUF BASIS KUPFEROXYD

VERFAHREN ZUR HERSTELLUNG VON SCHWEISSDRAEHTEN AUF KUPFERBASIS

UNCOATED CUTTING TOOL WITH A SOLDERED SUPER+HARD BLANK

CONNECTION FOR SCHLEIFWERKZEUG

PROCEDURE FOR THE PRODUCTION OF FILLER RODS ON COPPER BASIS

COPPER MANGANESE WELDING FILLER METAL TO THE ARC WELDING

HARTLOTBLATT UND HERSTELLUNGSVERFAHREN DAFÜR

Um ein Hartlotblatt mit ausgezeichneten Handhabungseigenschaften zu erhalten, wird ein Pulver einer Lötmetall-Zusammensetzung aus einer einzelnen Pulversorte gewonnen oder durch Mischen von zwei oder mehr Pulvern, um die Lötmetall-Zusammensetzung zu bilden. Durch Pulver-Walzverdichten wird das Pulver in Blattform gebracht.

DUKTILE HARD RELEASE ALLOYS CONTAINING REACTIVE METALS AND PRECIOUS METALS.

PRODUCTION OF ARTICLES BY COMPOUND FORMATION OF PRE-TREATED POWDERS

WELDING-ROD MATERIALS FOR WELDING.

Compound body

HEAT EXCHANGER FROM SOLDERED COPPER AND WELDING METHOD TO THEIR PRODUCTION

CONNECTION FOR SCHLEIFWERKZEUG

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

PROCEDURE FOR THE REDUCTION OF METALLIC OXIDE POWDER AND ATTACHMENT OF IT ON A HEAT TRANSMISSION SURFACE AND HEAT TRANSMISSION SURFACE

Functional alloy particles

BRAZING ALLOYS

Modified absorption through unique composite materials and material combinations

TRANSIENT EUTECTIC PHASE PROCESS FOR CERAMIC-METAL BONDING, METALLILZATION, AND COMPOSITING

A method for directly joining ceramics (10) and metals (12). The method involves forming a structure having a ceramic component (10), a more refractory metallic component and a less refractory metallic-material-based interlayer (14) disposed between the ceramic component (10) and the metallic component (12); adding a eutectic forming reactant to the metallic interlayer (14); and heating the structure to approximately a eutectic melting temperature of the reactant and the interlayer to form a metallic-material- based eutectic liquid that interacts with the metallic component to form a bond that directly joins the ceramic and metallic components to one another.

COPPER-CONTAINING TIN POWDER AND METHOD FOR PRODUCING THE COPPER-CONTAINING TIN POWDER, AND ELECTROCONDUCTIVE PASTE USING THE COPPER-CONTAINING TIN POWDER

COPPER-SILVER-TITANIUM FILLER METAL FOR DIRECT BRAZING OF STRUCTURAL CERAMICS

COPPER-SILYER-TITANIUM FILLER METAL FOR DIRECT BRAZING OF STRUCTURAL CERAMICS A method of joining ceramics and metals to themselves and to one another is described using a brazing filler metal consisting essentially of 35 to 50 atomic percent copper, 15 to 50 atomic percent silver and 10 to 45 atomic percent titanium. This method produces strong joints that can withstand high service temperatures and oxidizing environments.

BRAZING METHOD AND ALLOY FOR BISMUTH STEEL

BRAZING METHOD AND ALLOY FOR BISMUTH STEEL Embrittlement of a copper brazing joint can occur when a bismuth steel part is brazed to another steel part. Such embrittlement is prevented by providing a small amount of lead (0.05-1.0 wt.%) in the brazing metal at the joint.

BRAZING PROCESS

IMPROVED BRAZING PROCESS Ferrous parts are bonded together in a copper brazing furnace under suitable temperatures and a furnace atmosphere which, in the absence of parts, is comprised of at least 90% nitrogen, up to 7% combined hydrogen and carbon monoxide with hydrogen being greater than 50% of the total of CO and H2 and having a dew point between approximately -40 to + 10.degree.C. In the preheat section of a continuous belt furnace or the like, the dew point may range between -20 to +10.degree.C while in the furnace hot zone, the dew point is maintained between approximately -40 to -10.degree.C. A brazing paste which is preferably a combined copper and 25-75% copper oxide paste is utilized. With such furnace atmosphere and paste composition, clean part surfaces, which permit superior wetting by molten copper and thus acceptable copper flow and penetration into the joint being bonded, are obtainable. The furnace atmospheres utilized enable increased life to be obtained from furnace materials ...

COPPER-MANGANESE-ZINC BRAZING ALLOY

BRAZING ALLOY COMPOSITION

ALLOY BASED LASER WELDING

A method is disclosed for laser lap welding a pair of metal members together. At least one of the pair of metal members having a protective metal layer. Each of the metal members having a melt temperature greater than the melt temperature of the protective metal layer. The method includes placing one end of the pair of metal members in an overlapping relation to an other end of the pair of metal members to form an overlapping section. The method also includes inserting a metal alloying agent between the pair of metal members of the overlapping section to form a gap therebetween. A laser welder is used to join the pair of metal members and the alloying agent together so that the protective metal layer and the alloying agent are melted to form an alloy layer between the pair of metal members.

MATERIAL AND METHOD OF MANUFACTURE OF A SOLDER JOINT WITH HIGH THERMAL CONDUCTIVITY AND HIGH ELECTRICAL CONDUCTIVITY

The present invention provides a powder blend or composite powder that is fed into a kinetic spray device, accelerated towards a substrate or part in order to form a composite solder with thermal and electrical properties better than existing solder. The other advantages of building a solder layer in this manner include a low oxide content to improve subsequent solderability, excellent control of the deposition thickness, excellent control of the deposition chemistry and lastly, high speed of manufacture.

WEAR RESISTING PARTICLE AND WEAR RESISTING STRUCTURAL MEMBER

Disclosed is a wear-resistant particle which can be substantially uniformly dispersed in a molten pool. Specifically disclosed is a wear-resistant particle (13) which is dispersed in a matrix metal for improving wear resistance thereof. The wear-resistant particle is characterized by being composed of a material containing a first hard material and a second hard material while having a particle diameter of 0.2-9 mm. The wear-resistant particle is further characterized in that the material consists of 60-96% by volume of a carbide and the balance of a metal.

HARD SINTERED BODY TOOL

A tool manufactured by brazing a hard sintered body such as a diamond or cBN to a tool substrate through a bonding layer comprising at least one of Ti and Zr by 15-65 wt% and Cu. Two ridges of the tool substrate on both sides each has a first ridge adjacent to and aligned with a ridge of the hard sintered body and a second ridge provided nearer to an inscribed circle of the tool than is the ridge of the hard sintered body. Also, an upright side face and a bottom of each seating groove formed in the tool substrate intersect each other at an angle smaller than the intersecting angle between a back side and a bottom of each hard sintered body.

Verfahren zum Löten von mindestens an der Oberfläche aus einer oxydationsbeständigen Legierung bestehenden Gegenständen.

Legierter Zusatzwerkstoff für Schmelzschweissungen und Lötungen.

Verfahren zum Löten von mindestens an der Oberfläche aus einer oxydationsbeständigen Legierung bestehenden Gegenständen.

Alliage pour soudure et brasure

Verfahren zur Herstellung lötfähiger Schichten auf Aluminium

Insbesondere zur vakuumdichten Verbindung keramischer Teile eines Vakuumgefässes geeignete Lötlegierung

Alliage pour soudure.

Baguette de métal d'apport pour la soudure électrique.

Utilisation d'un alliage ternaire pour le brasage

Kupferlegierung

Procédé de préparation de l'acier inoxydable en vue de son soudage ultérieur

Alliage pour soudure et brasure

Alliage pour soudure

Alliage et utilisation dudit alliage pour le brasage de pièces métalliques

Utilisation d'un alliage ternaire pour le brasage

Hartlot

Verfahren und Schweisselektrode zum Lichtbogenschweissen

Alliage de brasage

Aus Weichlot gebildete Lötnaht, Verfahren zu ihrer Herstellung und Werkstoff zur Ausführung desselben

Besonders zum flussmittelfreien Schweissen oder Löten geeignete Kupferlegierung

Durch Hartlötung hergestellte, gegen Quecksilber unempfindliche Lot-Verbindung zweier Bauteile, Verfahren zu ihrer Herstellung und Verwendung einer solchen Verbindung

Procédé de soudage de deux conducteurs électriques qui sont en cuivre ou en alliage de cuivre et ensemble comprenant deux conducteurs électriques soudés par ce procédé

Alliage pour le brasage et utilisation de celui-ci

Procédé pour produire une liaison homogène entre un corps de céramique et un corps associé, et liaison résultant de ce procédé

Brasure

Electrode enrobée pour la soudure à l'arc électrique

Schweisselektrode zum Lichtbogenschweissen von Kupfer und Kupferlegierungen

Device and method for brazing a heat pipe

The present invention relates to a device and method for brazing a heat pipe assembly with copper-silver alloy filler rings to improve heat dissipation efficiency of a heat pipe. The device comprises a brazing furnace and a conveyor. The brazing furnace comprises an open ended passage with a multi-stage brazing heater and cooler. The conveyor comprises an input bracket assembly, an output bracket assembly and a steel mesh belt. The method comprises steps of (A) providing multiple heat pipe components, (B) assembling the heat pipe components to form heat pipe assemblies, (C) injecting mixed gas, (D) turning on the multi-stage brazing heater and cooler, (E) placing the heat pipe assemblies on the conveyor, (F) brazing the heat pipe assemblies to form heat pipes, (G) cooling the heat pipes and (H) removing the heat pipes from the conveyor.

Electroconductive bonding material, method for bonding conductor, and method for manufacturing semiconductor device

An electro-conductive bonding material includes: metal components of a high-melting-point metal particle that have a first melting point or higher; a middle-melting-point metal particle that has a second melting point which is first temperature or higher, and second temperature or lower, the second temperature is lower than the first melting point and higher than the first temperature; and a low-melting-point metal particle that has a third melting point or lower, the third melting point is lower than the first temperature.

High strength stick electrode

A shielded metal arc welding electrode for depositing a high strength weld metal bead on a workpiece which satisfies the strength requirements under America Welding Society A5.5 standard's E11018M classification with no chromium added to the composition of the electrode.

Conductive bonding material, conductor bonding method, and semiconductor device production method

A conductive bonding material comprising: a first metal particle; a second metal particle having an average particle diameter larger than an average particle diameter of the first metal particle; and a third metal particle having an average particle diameter larger than the average particle diameter of the first metal particle, a relative density larger than a relative density of the first metal particle, and a melting point higher than a melting point of the second metal particle.

Doped 4n copper wires for bonding in microelectronics devices

A doped 4N copper wire for bonding in microelectronics contains one or more corrosion resistance dopant materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance dopant materials is between about 10 wt. ppm and about 80 wt. ppm.

3N COPPER WIRES WITH TRACE ADDITIONS FOR BONDING IN MICROELECTRONICS DEVICES

A 3N copper wire with trace additions for bonding in microelectronics contains 3N copper and one or more corrosion resistance addition materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance addition materials is between about 90 wt. ppm and about 980 wt. ppm. 1. A 3N copper wire with trace additions for bonding in microelectronics , wherein the wire comprises 3N copper and one or more corrosion resistance addition materials selected from the group consisting of Ag , Ni , Pd , Au , Pt , and Cr , wherein a total concentration of the corrosion resistance addition materials is between about 90 wt. ppm and about 980 wt. ppm.2. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Ag.3. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Ni.4. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Pd.5. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Au.6. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Pt.7. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 90 wt. ppm to about 980 wt. ppm Cr.8. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 10 wt. ppm to about 50 wt. ppm Ag claim 1 , about 10 wt. ppm to about 50 wt. ppm Ni claim 1 , and about 10 wt. ppm to about 880 wt. ppm Pd.9. The 3N copper wire according to claim 1 , wherein the corrosion resistance addition material comprises about 10 wt. ppm to about 300 wt. ppm Ag and about 10 wt. ppm to about 100 wt. ppm Ni. ...

BRAZING ALLOYS AND METHODS OF BRAZING

A brazing alloy is provided in the form of a wire, rod or preform, and is made of, in weight percent: 3-7.5% P, 0.1-1.9% Zn, 0-74.7% Ag, 0-80% Au, 0-10% Sn, 0-5% Ni, 0-3% each of Si, Mn, Li, and Ge, and the balance copper in an amount of at least 21.7%. In additional embodiments, Zn may be present in an amount of 0.6-1.9%. A method of torch brazing is also provided. The method includes forming the alloy into a wire or rod, placing the tip of the wire or rod in contact with a surface of a joint, heating the joint surface using a torch flame, and contacting the tip of the wire or rod to the heated joint surface to melt and flow the alloy onto the joint surface and into the joint under capillary action. 1. A brazing alloy in the form of a wire , rod or preform , comprising , in weight percent: 3-7.5% P , 0.1-1.9% Zn , 0-74.7% Ag , 0-80% Au , 0-10% Sn , 0-5% Ni , and the balance copper in an amount of at least 21.7%.2. The brazing alloy of claim 1 , wherein the Zn is present in an amount of 0.6-1.9%.3. The brazing alloy of claim 2 , in the form of a wire or rod.4. The brazing alloy of claim 3 , consisting essentially of 3-7.5% P claim 3 , 0.6-1.9% Zn claim 3 , 0-74.7% Ag claim 3 , 0-80% Au claim 3 , 0-10% Sn claim 3 , 0-5% Ni claim 3 , 0-3% each of Si claim 3 , Mn claim 3 , Li claim 3 , and Ge claim 3 , and the balance copper in the amount of at least 21.7%.5. The brazing alloy of claim 3 , consisting essentially of 3-7.5% P claim 3 , 0.6-1.9% Zn claim 3 , 0-30% Ag claim 3 , 0-10% Sn claim 3 , 0-5% Ni claim 3 , and the balance copper in an amount of at least 54.4%.6. The brazing alloy of claim 3 , wherein the Ag is present in an amount of 0-30% and the balance of copper is at least 54.4%.7. The brazing alloy of claim 6 , wherein the Ag is present in an amount of 5-18%.8. The brazing alloy of claim 7 , wherein the Zn is present in an amount of 0.7-1%.9. The brazing alloy of claim 7 , wherein the Sn is present in an amount of 0.5-10% and the Zn is present in an amount of ...

PRESSURE RESISTANT AND CORROSION RESISTANT COPPER ALLOY, BRAZED STRUCTURE, AND METHOD OF MANUFACTURING BRAZED STRUCTURE

A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0≦[Cu]−3.6×[Si]≦67.5. In addition, the area fraction of the α phase “α”%, the area fraction of a β phase “β”%, the area fraction of a γ phase “γ”%, the area fraction of the κ phase “κ”%, and the area fraction of a μ phase “μ”% satisfy 30≦“α”≦84, 15≦“κ”≦68, “α”+“κ”≧92, 0.2≦“κ”/“α”≦2, “β”≦3, “μ”≦5, “β”+“μ”≦6, 0≦“γ”≦7, and 0≦“β”+“μ”+“γ”≦8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy. 1. A pressure resistant and corrosion resistant copper alloy brazed to another material , wherein the copper alloy has an alloy composition comprising:73.0 mass % to 79.5 mass % of Cu; and2.5 mass % to 4.0 mass % of Si, with a remainder comprising Zn and inevitable impurities,wherein the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0≦[Cu]−3.6×[Si]≦67.5, anda metallic structure at a brazed portion of the copper alloy includes at least a κ phase in an α phase matrix, and an area fraction of the α phase “α”%, an area fraction of a β phase “δ”%, an area fraction of a γ phase “γ”%, an area fraction of the κ phase “κ”%, and an area fraction of a μ phase “μ”% satisfy the relationships 30≦“α”84, 15≦“κ”≦68, “α”+“κ”≧92, 0.2≦“κ”/“α”2, 0≦“β”≦3, 0≦“μ”≦5, 0≦“β”+“μ”≦6, 0≦“γ”≦7, and 0≦“β”+“μ”+“γ”≦8.2. The pressure resistant and corrosion resistant copper alloy according to claim 1 , further comprising at least one additional component selected from the group consisting of 0.015 mass % to 0.2 mass % of P claim 1 , 0.015 mass % to 0.2 mass % of Sb claim 1 , 0.015 mass % to 0.15 mass % of As claim 1 , 0.03 mass % to 1.0 mass % of Sn claim 1 , and 0.03 mass % to 1.5 mass % of Al claim 1 , ...

Pressure resistant and corrosion resistant copper alloy, brazed structure, and method of manufacturing brazed structure

A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0≦[Cu]−3.6×[Si]≦67.5. In addition, the area fraction of the α phase “α”%, the area fraction of a β phase “β”%, the area fraction of a γ phase “γ”%, the area fraction of the κ phase “κ”%, and the area fraction of a μ phase “μ”% satisfy 30≦“α”≦84, 15≦“κ”≦68, “α”+“κ”≧92, 0.2≦“κ”/“α”≦2, “β”≦3, “μ”≦5, “β”+“μ”≦6, 0≦“γ”≦7, and 0≦“β”+“μ”+“γ”≦8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy.

METHOD AND SYSTEM TO START AND USE COMBINATION FILLER WIRE FEED AND HIGH INTENSITY ENERGY SOURCE FOR WELDING ALUMINUM TO STEEL

A method and system to weld or join workpieces of different materials employing a high intensity energy source to create a weld puddle and at least one resistive filler wire which is heated to at or near its melting temperature and deposited into the weld puddle. 1. A method of welding aluminum and steel , comprising:creating a weld puddle on a steel workpiece with at least one high intensity energy source;causing said weld puddle to impact on an aluminum workpiece to be joined to said steel workpiece;determining an upper threshold value;heating at least one filler wire with a filler wire heating signal from a power source to a temperature such that said filler wire melts in said weld puddle when said filler wire is in contact with said weld puddle;directing said filler wire to said weld puddle such that said filler wire maintains contact with said weld puddle during a welding operation;monitoring a feedback from said filler wire heating signal;shutting off said filler wire heating signal when said upper threshold value is reached by said filler wire heating signal such that no arc is generated between said filler wire and said weld puddle; andturning on said filler wire heating signal to continue heating said filler wire,wherein a weld deposit is created between said steel workpiece and said aluminum workpiece such that said weld deposit penetrates each of said steel and aluminum workpieces and said weld deposit has aluminum in the range of 0.01 to 16% and iron in the range of 0.01 to 10%.2. The method of claim 1 , wherein said weld deposit has aluminum in the range of 11 to 14% and iron in the range of 4 to 8%.3. The method of claim 1 , wherein said at least one filler wire has aluminum in the range of 6.5 to 11.5% claim 1 , nickel in the range of 3 to 7% claim 1 , manganese in the range of 0.7 to 3% claim 1 , iron in the range of 2 to 6% claim 1 , and the remainder of the composition of the at least one filler wire is copper.4. The method of claim 1 , wherein ...

COPPER OR COPPER REDUCED IN ALPHA RAY EMISSION, AND BONDING WIRE OBTAINED FROM THE COPPER OR COPPER ALLOY AS RAW MATERIAL

Copper or a copper alloy characterized in having an α-ray emission of 0.001 cph/cmor less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of α rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in α-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which α rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in α-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material. 1. Copper or a copper alloy , wherein an α-ray emission of a sample after being subject to melting/casting is 0.001 cph/cmor less , Pb content including Pb as an isotope of Pb is less than 0.01 ppm , U content is less than 5 wtppb , and Th content is less than 5 wtppb.2. The copper or a copper alloy according to claim 1 , wherein respective α-ray emissions of samples 1 week after claim 1 , 3 weeks after claim 1 , 1 month after claim 1 , 2 months after claim 1 , 6 months after and 30 months after the melting/casting are 0.001 cph/cmor less.3. The copper or copper alloy according to claim 1 , wherein the purity is 4N (99.99%) or higher.4. (canceled)5. A bonding wire made of copper or copper alloy in which an α-ray emission of a sample of the copper or copper alloy after being subject to melting/casting is 0.001 cph/cmor less claim 1 , Pb content including Pb as an isotope of Pb is less than 0.01 ppm claim 1 , U content is less than 5 wtppb claim 1 , and Th content is less than 5 wtppb.6. The bonding wire according to claim 5 , wherein the purity of the ...

Cu-P-Ag-Zn BRAZING ALLOY

The present invention relates to a Cu—P—Ag—Zn brazing alloy, and more particularly, to a brazing alloy composed of copper (Cu), phosphorus (P), zinc (Zn), and silver (Ag), and including one or two or more elements of indium (In), gallium (Ga), boron (B), tin (Sn), silicon (Si), germanium (Ge), lithium (Li), nickel (Ni), and manganese (Mn). The present invention is composed of 1% by weight to 50% by weight of silver (Ag), 10% by weight to 35% by weight of zinc (Zn), 0.01% by weight to 4% by weight of phosphorus (P), and the remainder of copper (Cu). 1. A Cu—P—Ag—Zn brazing alloy comprising 1% by weight to 50% by weight of silver (Ag) , 10% by weight to 35% by weight of zinc (Zn) , 0.01% by weight to 4% by weight of phosphorus (P) , and the remainder of copper (Cu).2. The Cu—P—Ag—Zn brazing alloy of claim 1 , further comprising:one or two or more elements selected from the group consisting of 1.0% by weight to 2% by weight of indium (In), 1.0% by weight to 2% by weight of gallium (Ga), 0.01% by weight to 1.6% by weight of boron (B), 0.1% by weight to 2% by weight of tin(Sn), 0.1% by weight to 0.75% by weight of silicon (Si), 0.01% by weight to 0.5% by weight of germanium (Ge), 0.01% by weight to 0.5% by weight of lithium (Li), 0.1% by weight to 2% by weight of nickel (Ni) and 0.1% by weight to 2% by weight of manganese (Mn). This application claims priority to and the benefit of Korean Patent Application No. 10-2012-0083289 filed in the Korean Intellectual Property Office on Jul. 30, 2012, the entire contents of which are incorporated herein by reference.The present invention relates to a Cu—P—Ag—Zn brazing alloy, and more particularly, to a brazing alloy composed of copper (Cu), phosphorus (P), zinc (Zn), and silver (Ag), and including one or two or more elements of indium (In), gallium (Ga), boron (B), tin (Sn), silicon (Si), germanium (Ge), lithium (Li), nickel (Ni), and manganese (Mn).A Cu—P—Ag—Zn brazing is a welding material which is used when performing working ...

Electrically conductive compositions comprising non-eutectic solder alloys

Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.

BRAZING ALLOY AND PROCESSES FOR MAKING AND USING

Disclosed is a brazing alloy composition. The composition comprises, by weight, about 94% copper, about 4% zinc, and about 2% iron. Further disclosed is a brazing process utilizing the brazing alloy, a method for the brazing alloy's preparation and a work piece having members joined by the brazing alloy providing stronger bonding as demonstrated by braze joints having increased shear strength. 1. A copper-based brazing alloy comprising about 0.1 to 10 wt. % zinc , about 0.1 to about 4 wt. % iron , and the balance copper.2. The brazing alloy of having a form selected from the group consisting of a wrought form and a powder form.3. The brazing alloy of claim 2 , wherein the form selected is a wrought from having a shape selected from the group consisting of a wire claim 2 , a strip claim 2 , a tube claim 2 , a slug and a foil.4. The brazing alloy of claim 2 , wherein the brazing alloy selected is a powder form formulated as a paste.5. The brazing alloy of comprising about 4 wt. % zinc claim 1 , about 2 wt. % iron claim 1 , and about 94 wt. % copper.6. A brazing process comprising;(a) providing members having at least two surfaces adapted for bonding and a brazing alloy;(b) positioning a brazing alloy proximate the at least two surfaces adapted for bonding;(c) heating the at least two members and the brazing alloy to a temperature sufficient to melt the brazing alloy; and(d) cooling the members and the brazing alloy to solidify the brazing alloy, wherein the brazing alloy comprises about 0.1 to 10 wt. % zinc, about 0.1 to about 4 wt. % iron, and the balance copper.7. The process of claim 6 , wherein providing a brazing alloy involves providing a brazing alloy having a form selected from the group consisting of a wrought form and a powder form.8. The process of claim 6 , wherein providing a brazing alloy involves providing a brazing alloy comprising about 4 wt. % zinc claim 6 , about 2 wt. % iron claim 6 , and about 94 wt. % copper.9. The process of claim 6 , wherein ...

Bimetallic welding electrode

An electrode is disclosed for use in MIG/MAG welding. The electrode comprises an elongated electrode body within which is embedded a metallic filament. In some embodiments, the filament is copper, and is offset from the center of the electrode body. A method is disclosed for forming an electrode. The method may include removing oxidation from a surface of an electrode body, forming the electrode body to a desired size and geometry, removing lubricants from the surface of the electrode body, forming an elongated channel in a surface of the electrode body, depositing a filament in the elongated channel, and forming the electrode body over the filament. Other embodiments are disclosed and claimed.

METHOD OF PRODUCING A VEHICLE GLASS ASSEMBLY

A method of producing a vehicle glass assembly, includes (A) providing a connector made of metal plate and comprising a first flat portion, a second flat portion and a bridge portion connecting between the first and the second flat portions, each the flat portion having a respective surface to be soldered, (B) soldering lead-free solder onto the surfaces to form first and second blocks of lead-free solder on the surfaces of the first flat portion and the second flat portion, respectively, (C) providing a glass substrate layer on which an electrically conductive layer comprising a wire pattern and a busbar is formed, and (D) sandwiching the lead-free solder blocks between their respective surfaces and the busbar, and then melting the blocks to form solder connections between the connector and the busbar; wherein the amount of lead-free solder in each of the blocks is between 15 mg and 50 mg. 1. A method of producing a vehicle glass assembly , comprising:(A) providing a connector made of metal plate and comprising a first flat portion, a second flat portion and a bridge portion connecting between the first and the second flat portions, said flat portions respectively having first and second surfaces for soldering,(B) soldering lead-free solder onto said surfaces to form first and second blocks of lead-free solder on the first and second surfaces, respectively,(C) providing a glass substrate layer on which an electrically conductive layer comprising a wire pattern and a busbar is formed, and(D) sandwiching the lead-free solder blocks between their respective surfaces and the busbar, and then melting the blocks to form lead-free solder layers by solder connections between the connector and the busbar;wherein the amount of lead-free solder in each of the blocks is between 15 mg and 50 mg,wherein each block on the first and second surfaces is away from all edges of the first and the second flat portions,wherein all lead-free solders are disposed between the first and the ...

JOINING MATERIAL AND METHOD FOR MANUFACTURING JOINED BODY

The joining material of the present invention is a joining material which contains a first metal powder and a second metal powder having a higher melting point than the first metal powder, in which the first metal powder is formed of Sn or an alloy containing Sn, the second metal powder is formed of a Cu—Ni alloy in which a proportion of Ni is 5 wt % or more and 30 wt % or less, a Cu—Ni—Co alloy in which a total of a proportion of Ni and a proportion of Co is 5 wt % or more and 30 wt % or less, or a Cu—Ni—Fe alloy in which a total of a proportion of Ni and a proportion of Fe is 5 wt % or more and 30 wt % or less, and a 90% volume grain size D90 of the second metal powder is 0.1 μm or more. 1. A joining material comprising:a first metal powder including Sn or an alloy containing Sn; and a Cu—Ni alloy in which a proportion of Ni is 5 wt % to 30 wt %,', 'a Cu—Ni—Co alloy in which a total of a proportion of Ni and a proportion of Co is 5 wt % to 30 wt %, or', 'a Cu—Ni—Fe alloy in which a total of a proportion of Ni and a proportion of Fe is 5 wt % to 30 wt %, and, 'a second metal powder having a higher melting point than the first metal powder, the second metal powder including'}a 90% volume grain size D90 of the second metal powder is 0.1 μm or greater.2. The joining material according to claim 1 , wherein a proportion of a weight the second metal powder to a weight of the first metal powder is 5 wt % or less.3. The joining material according to claim 1 , wherein a proportion of a weight the second metal powder to a weight of the first metal powder is 0.5 wt % to 5 wt %.4. The joining material according to claim 1 , wherein a proportion of a weight the second metal powder to a weight of the first metal powder is 1 wt % to 4 wt %.5. The joining material according to claim 1 , wherein D90 of the second metal powder is 0.1 μm to 4 μm.6. The joining material according to claim 1 , wherein the alloy containing Sn includes at least of Cu claim 1 , Ni claim 1 , Ag claim 1 , ...

ADDITIVE MANUFACTURING OF JOINING PREFORMS

A method of fabricating a joining preform includes the step of printing a self-fluxing joining alloy. Joining includes brazing and soldering. The self-fluxing joining alloy contains at least one of phosphorus, boron, fluorine, chlorine, or potassium. Another printing step prints a non-phosphorous joining alloy. Both printing steps are performed by an additive manufacturing or 3D printing process. The printing a self-fluxing joining alloy step may be repeated until the non-phosphorous joining alloy is substantially encapsulated by the self-fluxing joining alloy. The self-fluxing joining alloy may be a BCuP alloy, a CuP alloy, a CuSnP alloy, a CuSnNiP alloy or a CuAgP alloy. The non-phosphorous joining alloy may be a BAg alloy, a BNi alloy or a BAu alloy. 1. A method of fabricating a joining preform , the method comprising:printing a self-fluxing joining alloy, the self-fluxing joining alloy containing at least one of phosphorus, boron, fluorine, chlorine, or potassium;printing a non-phosphorous joining alloy;repeating the printing a self-fluxing joining alloy step until the non-phosphorous joining alloy is substantially encapsulated by the self-fluxing joining alloy; andwherein both printing steps are performed by an additive manufacturing process.2. The method of claim 1 , wherein the self-fluxing joining alloy is at least one of: a BCuP alloy claim 1 , a CuP alloy claim 1 , a CuSnP alloy claim 1 , a CuSnNiP alloy or a CuAgP alloy.3. The method of claim 1 , wherein the non-phosphorous joining alloy is at least one of a BAg alloy claim 1 , a BNi alloy claim 1 , a BAu alloy.4. The method of claim 1 , the printing a self-fluxing joining alloy step further comprising:printing the self-fluxing joining alloy on a part to be joined.5. The method of claim 1 , wherein the joining preform is formed into at least one of:a cylinder, a disc, a sheet or a washer.6. The method of claim 1 , wherein the printing a self-fluxing joining alloy step further comprises:printing multiple ...

Welding Wire for Gas Protective Welding of Reduced Activation Martensitic/Ferritic Steel and Method of Manufacturing the Same

Welding wire for gas protective welding of reduced activation ferritic/martensitic steel and the manufacturing method, chemical components (weight percentage, wt %): C: 0.1˜0.15, Cr: 8.0˜9.0, W: 1.0˜1.6, V: 0.15˜0.25, Ta: 0.10˜0.17, Mn: 0.50˜0.70, Si: 0˜0.05, N: 0˜0.02, O, Ni, Cu, Al, and Co: 0˜0.01 respectively, P, S, Ag, Mo, and Nb: 0˜0.005 respectively, and balance of Fe. The welding wire has Cr equivalent weight of less than 11, Ni equivalent weight of greater than 3.5. It is manufactured with a wire rod through multi-pass drawing. The rod is subject to annealing heat treatment, tempering treatment performed between the passes of drawing. The annealing process is: the rod is at 940˜1020° for 20˜60 minutes, and the n cooled to below 650° C. at rate of less than 45° C./hour, air-cooled to room temperature. The tempering process is: the rod is at 760˜820° for 0.5˜2 hours. It reduces forming of δ ferrites in welded joints. 1. A welding wire for gas protective welding of reduced activation ferritic/martensitic steel , characterized in that the welding wire has chemical components of weight percentages (wt %) as follows: C: 0.10˜0.15 , Cr: 8.0˜9.0 , W: 1.0˜1.6 , V: 0.15˜0.25 , Ta: 0.10˜0.17 , Mn: 0.50˜0.70 , Si: 0˜0.05 , N: 0˜0.02 , O , Ni , Cu , Al , and Co: 0˜0.01 respectively , P , S , Ag , Mo , and Nb: 0˜0.005 respectively , and balance of Fe.2. The welding wire for gas protective welding of reduced activation ferritic/martensitic steel according to claim 1 , characterized in that the welding wire has Cr equivalent weight of less than 11 claim 1 , and Ni equivalent weight of greater than 3.5.3. The welding wire for gas protective welding of reduced activation ferritic/martensitic steel according to claim 1 , characterized in that the welding wire is suitable for gas protective welding of China low activation martenstitic steel.4. A method for manufacturing a welding wire for gas protective welding of reduced activation ferritic/martensitic steel claim 1 , the ...

Reaction material pre-placement for reaction metallurgical joining

A method of pre-placing a reaction material onto a surface of a metal workpiece substrate involves the use of oscillating wire arc welding. The method involves depositing and adhering the reaction material from a consumable electrode rod. In doing so, the reaction material can be deposited at any time before the metal workpiece substrate is ready for joining by reaction metallurgical joining, and the size and shape of the reaction material deposit can be more easily controlled.

CURRENT SCHEDULE FOR OPTIMIZED REACTION METALLURGICAL JOINING

A method of joining a first metal workpiece substrate and a second metal workpiece substrate by way of reaction metallurgical joining involves passing a pulsating DC electrical current through the metal workpiece substrates and a reaction material disposed between confronting faying surfaces of the workpiece substrates. The electrical current comprises a plurality of current pulses that generally increase in applied current level. 1. A method of joining a first metal workpiece substrate and a second metal workpiece substrate by way of reaction metallurgical joining , the method comprising:providing a first metal workpiece substrate and a second metal workpiece substrate, the first and second metal workpiece substrates being stacked in overlapping fashion such that a faying surface of the first metal workpiece substrate confronts a faying surface of the second metal workpiece substrate, and wherein a reaction material is disposed between the faying surface of the first metal workpiece substrate and the faying surface of the second metal workpiece substrate at a joining location, the reaction material having a liquidus temperature below both a solidus temperature of the first metal workpiece substrate and a solidus temperature of the second metal workpiece substrate;passing a pulsating DC electrical current through the reaction material to resistively heat the reaction material and cause the reaction material to at least partially melt into a molten reaction material that contacts both the faying surface of the first metal workpiece substrate and the faying surface of the second metal workpiece substrate, neither the first metal workpiece substrate nor the second metal workpiece substrate being melted during passage of the pulsating DC electrical current; andpressing the first and second metal workpiece substrates together while the molten reaction material is present between the faying surfaces of the first and second metal workpiece substrates, the passing of the ...

BONDING WIRE FOR SEMICONDUCTOR DEVICE

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %. 1. A bonding wire for a semiconductor device comprising:a core material having Cu as a main component and containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass;a coating layer having Pd as a main component provided on a surface of the core material; anda skin alloy layer containing Au and Pd provided on a surface of the coating layer,wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more.2. The bonding wire for a semiconductor device according to claim 1 , whereinthe coating layer having Pd as a main component has a thickness of 20 to 90 nm, andthe skin alloy layer containing Au and Pd has a thickness of 0.5 to 40 nm and has a maximum concentration of Au of 15 to 75 at %.3. The bonding wire for a semiconductor device according to claim 1 , whereinthe core material further contains either or both of Au and Ni, andthe total amount of Pd, Pt, Au and Ni in the core material is more than 0.1% by mass and 3.0 ...

METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE

A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

Ceramic copper circuit board and semiconductor device using same

A ceramic copper circuit board including a ceramic substrate, and a copper circuit part located on the ceramic substrate, wherein an arbitrary line parallel to a first direction at a cross section of the copper circuit part parallel to the first direction crosses multiple copper crystal grains, the first direction is from the ceramic substrate toward the copper circuit part, an average of multiple distances in a second direction between the line and edges of the copper crystal grains is not more than 300 μm, and the second direction is perpendicular to the first direction.

CONDUCTIVE PASTE AND ELECTRONIC DEVICE AND SOLAR CELL INCLUDING AN ELECTRODE FORMED USING THE CONDUCTIVE PASTE

A conductive paste includes a conductive powder, a metallic glass having a glass transition temperature of less than or equal to about 600° C. and a supercooled liquid region of greater than or equal to 0 K, and an organic vehicle, and an electronic device and a solar cell include an electrode formed using the conductive paste. 1. A conductive paste comprising:a conductive powder; the metallic glass having a glass transition temperature of less than or equal to about 600° C., and', 'the metallic glass having a supercooled liquid region of greater than or equal to about 0 K; and, 'a metallic glass,'}an organic vehicle.2. The conductive paste of claim 1 , wherein the glass transition temperature of the metallic glass ranges from about 10° C. to about 400° C.3. The conductive paste of claim 1 , wherein the supercooled liquid region of the metallic glass ranges from about 0 K to about 200 K.4. The conductive paste of claim 1 , wherein the metallic glass exists at least partly in an amorphous state.5. The conductive paste of claim 1 , wherein the metallic glass includes at least one of an aluminum-based metallic glass claim 1 , a cerium-based metallic glass claim 1 , a strontium-based metallic glass claim 1 , a gold-based metallic glass claim 1 , an ytterbium metallic glass claim 1 , a zinc-based metallic glass claim 1 , a calcium-based metallic glass claim 1 , a magnesium-based metallic glass claim 1 , a platinum-based metallic glass claim 1 , a palladium-based metallic glass claim 1 , and a zirconium-based metallic glass.6. The conductive paste of claim 5 , whereinthe at least one of the aluminum-based metallic glass, cerium-based metallic glass, strontium-based metallic glass, gold-based metallic glass, ytterbium metallic glass, zinc-based metallic glass, calcium-based metallic glass, magnesium-based metallic glass, platinum-based metallic glass, palladium-based metallic glass, and zirconium-based metallic glass is an alloy including at least one of aluminum, cerium, ...

JOINING METHOD AND JOINING SYSTEM

A joining method for joining a first member and a second member is provided. The joining method includes a step of providing a first brazing layer on the first member by plating, a step of providing a second brazing layer on the first brazing layer by plating, a step of arranging the first member and the second member to oppose each other across the first brazing layer and the second brazing layer, and a step of melting the first brazing layer and the second brazing layer to join the first member and the second member which are arranged to oppose each other. 1. A joining method for joining a first member and a second member comprising:providing a joining layer on the first member;arranging the first member and the second member to oppose each other across the joining layer; andmelting the joining layer to join the first member and the second member which are arranged to oppose each other,wherein the providing a joining layer on the first member comprises:providing a first brazing layer on the first member by plating; andproviding a second brazing layer on the first brazing layer by plating,wherein a first material constituting the first brazing layer is a material different from a second material constituting the second brazing layer.2. The joining method according to claim 1 , wherein the providing a joining layer on the first member further comprises:providing a third brazing layer on the second brazing layer by plating,wherein a third material constituting the third brazing layer is a material different from the second material constituting the second brazing layer.3. The joining method according to claim 2 , wherein the first material constituting the first brazing layer is the same material as the third material constituting the third brazing layer.4. The joining method according to claim 2 , wherein the first material constituting the first brazing layer is different from the third material constituting the third brazing layer.5. The joining method according ...

Low-temperature Nanosolders

A nanosolder comprises a first metal nanoparticle core coated with a second metal shell, wherein the first metal has a higher surface energy and smaller atomic size than the second metal. For example, a bimetallic nanosolder can comprise a protective Ag shell “glued” around a reactive Cu nanoparticle. As an example, a 3-D epitaxial Cu-core and Ag-shell structure was generated from a mixture of copper and silver nanoparticles in toluene at temperatures as low as 150° C. 1. A nanosolder , comprising a first metal nanoparticle core coated with a second metal shell , wherein the first metal has a higher surface energy and smaller atomic size than the second metal.2. The nanosolder of claim 1 , wherein the first metal has a surface energy that is greater than 1.25 times the surface energy of the second metal.3. The nanosolder of claim 1 , wherein the first metal comprises copper and the second metal comprises silver.4. The nanosolder of claim 1 , further comprising at least one additional metal.5. A method for forming a nanosolder claim 1 , comprising:providing a mixture of first metal nanoparticles and second metal nanoparticles, wherein the first metal has a higher surface energy and smaller atomic size than the second metal; andheating the mixture to a sufficiently high temperature to cause the first and second metal nanoparticles to react to form a nanosolder comprising a nanoparticle core of the first metal coated with a shell of the second metal.6. The method of claim 5 , wherein the first metal comprises copper and the second metal comprises silver.7. The method of claim 6 , wherein the mixture is heated to between 150° C. and 300° C.8. The method of claim 5 , wherein the first and second metal nanoparticles are dispersed in a solution.9. The method of claim 8 , wherein the solution comprises toluene. This application is a continuation-in-part of U.S. application Ser. No. 14/660,707, filed Mar. 17, 2015, which claimed the benefit of U.S. Provisional Application No ...

LOW-MANGANESE GAS-SHIELDED FLUX CORED WELDING ELECTRODES

A gas-shielded flux cored welding electrode comprises a ferrous metal sheath and a core within the sheath enclosing core ingredients. The core ingredients and sheath together comprise, in weight percentages based on the total weight of the core ingredients and the sheath: 0.25 to 1.50 manganese; 0.02 to 0.12 carbon; 0.003 to 0.02 boron; 0.2 to 1.5 silicon; 0 to 0.3 molybdenum; at least one of titanium, magnesium, and aluminum, wherein the total content of titanium, magnesium, and aluminum is 0.2 to 2.5; 3 to 12 titanium dioxide; at least one arc stabilizer, where the total content of arc stabilizers is 0.05 to 1.0; no greater than 10 of additional flux system components; remainder iron and incidental impurities. 1. A gas-shielded flux cored welding electrode for use in comprising a ferrous metal sheath and a core within the sheath including core ingredients , the core ingredients and the sheath together comprising , in weight percentages based on the total weight of the core ingredients and the sheath:0.25 to 1.50 manganese;0.02 to 0.12 carbon;0.003 to 0.02 boron;0.2 to 1.5 silicon;0 to 0.3 molybdenum;at least one of titanium, magnesium, and aluminum, wherein the total content of titanium, magnesium, and aluminum is 0.2 to 2.5;3 to 12 titanium dioxide;at least one arc stabilizer, where the total content of arc stabilizers is 0.05 to 1.0;no greater than 10 of additional flux system components;iron; andincidental impurities.2. The gas-shielded flux cored welding electrode recited in claim 1 , wherein the ferrous metal sheath is generally tubular.3. The gas-shielded flux cored welding electrode recited in claim 1 , wherein the electrode is adapted for use in flux cored arc welding wherein the shielding gas is selected from argon claim 1 , carbon dioxide claim 1 , oxygen claim 1 , other inert gases claim 1 , and mixtures of at least two thereof.4. The gas-shielded flux cored welding electrode recited in claim 1 , where the at least one arc stabilizer comprises a ...

Low Silver, Low Nickel Brazing Material

A homogenous brazing material essentially consisting of relatively low amounts of silver and nickel together with copper, zinc, and other constituents is provided. The brazing material has a working temperature exceeding 630° F. and is preferably between about 1250° F. and 1500° F. The brazing material preferably has about 30 percent by weight of silver, about 36 percent by weight of copper, about 32 percent by weight of zinc, and about 2 percent by weight of nickel. The addition of nickel in the above-specified amount improves resistance against interface corrosion in aqueous solutions, aids in the strength of the alloy, and provides improved wettability on ferrous and non-ferrous substrates. The brazing material may also include a flux, such as a core or a coating. 1. A brazing material consisting essentially ofless than approximately 35 percent by weight of silver;less than approximately 40 percent by weight of copper;more than 18 percent by weight of zinc; andfrom approximately 1.75 percent by weight to approximately 2.25 percent by weight of nickel.2. The material of having silver in an amount less than 32 percent by weight of silver.3. The material of having silver in an amount less than 31 percent by weight of silver.4. The material of having from approximately 29 percent by weight to approximately 31 percent by weight of silver.5. The material of having from approximately 31 percent by weight to approximately 40 percent by weight of zinc.6. The material of having copper in an amount less than 38 percent by weight.7. The material of having copper in an amount less than approximately 37 percent by weight.8. The material of having from approximately 35 percent by W eight to approximately 37 percent by weight of copper.9. The material of having a working temperature greater than approximately 630° F.10. The material of having a working temperature of between 1250° F. and 1450° F.11. The material of in the form of at least one of a strip claim 1 , a wire claim 1 ...

METHOD FOR OBTAINING A WELDING ELECTRODE

An electrode in which the metallurgical structure of the active surface includes incoherent chromium precipitates, more than 90% of which have a surface of projection of less than 1 μm, the incoherent chromium precipitates having a size at least between 10 and 50 nm. The electrode further has a fibrous structure that is visible in a cross-section of the active surface of the electrode following surfacing and chemical etching. The fibrous structure includes a plurality of radial fibers having a thickness of less than 1 mm and of a substantially central fiberless region that has a diameter of less than 3 mm. The electrical conductivity of the electrode is greater than 85% IUPAC. The method for obtaining the electrode in a continuous casting process as well as to a use of the electrode in a resistive spot welding process. 1. A welding electrode being comprised of copper , chromium , zirconium alloy , and at least one of phosphorus and magnesium ,wherein the proportion of chromium is between 0.4 and 0.8% by weight,wherein the proportion of zirconium is between 0.02 and 0.09% by weight, the total proportion of phosphorus and/or magnesium being higher than 0.005% by weight, with a proportion of magnesium lower than 0.1% by weight and a proportion of phosphorus lower than 0.03% by weight, the rest of the composition being copper,wherein the structure of the electrode comprises incoherent chromium precipitates, more than 90% of which have a projected surface area of less than 1 μm2, said incoherent chromium precipitates having dimensions at least between 10 and 50 nm, said electrode having in addition a fibrous structure, visible in a cross-sectional view of the active face of said electrode after surfacing and chemical etching, andwherein said structure comprises a plurality of radial fibers, said fibers having a thickness of less than 1 mm, preferably less than 0.5 mm, and a substantially fiberless central zone having a diameter of less than 5 mm, preferably less than 3 ...

ALLOYS

Novel alloys which can be employed in joining technology and have improved wetting properties are described. 121-. (canceled)22. A process for vacuum brazing of joints for use in vacuum switching chambers , the process comprising brazing of the joints using a brazing alloy comprising the following constituents: from 41% by weight to 75% by weight of copper; from 20% by weight to 44% by weight of silver; from 5% by weight to 15% by weight of gallium wherein the constituents have a carbon content that does not exceed 0.005 by weight , and wherein the content of cadmium , phosphorus , lead , and zinc of the brazing alloy does not exceed 0.01% by weight each.23. The process of claim 22 , wherein the brazing alloy contains from 25 to 40% by weight of silver.24. The process of claim 22 , wherein the brazing alloy contains from 45 to 60% by weight of copper.25. The process of claim 22 , wherein the brazing alloy contains from 6% by weight to 14% by weight of gallium.26. The process of claim 22 , wherein the silver and copper in the brazing alloy are present in a proportional ratio of from 25:61 to 44:45.27. The process of claim 22 , wherein the brazing alloy further comprises from 0.1% by weight to 15% by weight of one or more further alloy constituents selected from the group consisting of manganese claim 22 , nickel claim 22 , indium claim 22 , tin claim 22 , germanium claim 22 , titanium and silicon.28. The process of claim 27 , wherein the one or more further alloy constituents are selected from the group consisting of from 0.5% by weight to 15% by weight of manganese claim 27 , from 0.1% by weight to 5% by weight of nickel claim 27 , from 0.5% by weight to 7% by weight of indium claim 27 , from 0.3% by weight to 3% by weight of tin claim 27 , from 0.3% by weight to 1.5% by weight of germanium claim 27 , from 0.1% by weight to 4% by weight of titanium claim 27 , and from 0.1% by weight to 1% by weight of silicon and combinations thereof.29. A vacuum switching chamber ...

CONDUCTIVE JOINING MATERIAL AND CONDUCTIVE JOINING STRUCTURE WHICH USE METAL PARTICLES AND CONDUCTIVE MATERIAL PARTICLES

A conductive joining material and conductive joined structure for joining two joining members by a joining layer using metal nanoparticles at the time of which even if there is a difference in the amounts of heat expansion due to a difference in linear thermal expansion coefficients between these two joining members and further use at a high temperature is sought, it is possible to adjust the amount of heat expansion of the joining layer to a suitable value between the two joining members to ease the thermal stress occurring at the joining layer and possible to sufficiently hold the joint strength between the two joining members are provided. 112-. (canceled)13. A conductive joining material containing metal nanoparticles , microparticles of a conductive material , and a solvent , wherein the conductive material forming said microparticles has a linear thermal expansion coefficient smaller than the linear thermal expansion coefficient of the metal forming said nanoparticles and the microparticles of conductive material have an average particle size of 0.5 to 10 μm.14. The conductive joining material according to claim 13 , wherein said difference in linear thermal expansion coefficient between the metal forming the nanoparticles and the conductive material forming the microparticles is 5×10/K or more.15. The conductive joining material according to claim 13 , wherein said metal nanoparticles are any one of Ag claim 13 , Au claim 13 , Cu claim 13 , and Ni.16. The conductive joining material according to claim 13 , wherein said microparticles of conductive material are one or more of a metal or metal boride.17. The conductive joining material according to claim 13 , wherein said microparticles of conductive material are one or more of any of W claim 13 , Mo claim 13 , Cr claim 13 , TiB claim 13 , and ZrB.18. The conductive joining material according to claim 13 , wherein 10 to 80 vol % of the total of the metal nanoparticles and microparticles of conductive material ...

Bonding member and bonding method

A bonding member that includes a resin body defining an airtight interior, and a bonding material enclosed in the interior of the resin body. The bonding material is a mixed powder that includes a plurality of particles of a first metal powder and a plurality of particles of a second metal powder. The second metal powder reacts with the first metal powder when melted to thereby produce an intermetallic compound. The resin body has a melting point higher than a softening point of the mixed powder.

COPPER SOLDER FORMULATION

Bulk copper solder is highly desired as a solder compound because it is very electrically conductive and has a high melting point relative to other solders. A composition for a copper solder includes copper(II) oxide powder in the range of 37-53% by mass, silicon carbide (SiC) powder in the range of 8-14% by mass, and a flux in the range of 35%-53% by mass. Energy in the form of microwave energy can be applied to the copper solder to convert the Cu(II)O to Cu, for a Cu product conversion of >93%. 1. A solder composition , comprising:copper(II) oxide powder in the range of 37-53% by mass;silicon carbide (SiC) powder in the range of 8-14% by mass; anda flux in the range of 35%-53% by mass, each relative to a total mass of the solder composition.2. The composition of claim 1 , wherein the copper(II) oxide powder is in the range of 38-42% by mass of the solder composition claim 1 , the silicon carbide powder is in the range of 9-11% by mass of the solder composition claim 1 , and the flux is in the range of 48-52% by mass of the solder composition.3. The composition of claim 1 , wherein the copper(II) oxide powder is in the range of 44-45% by mass of the solder composition claim 1 , the silicon carbide powder is in the range of 11-12% by mass of the solder composition claim 1 , and the flux is in the range of 44-45% by mass of the solder composition.4. The composition of claim 1 , wherein the copper(II) oxide powder is in the range of 48-52% by mass of the solder composition claim 1 , the silicon carbide powder is in the range of 12-13% by mass of the solder composition claim 1 , and the flux is in the range of 37-38% by mass of the solder composition.5. The composition of claim 1 , wherein the solder compound is heated using a microwave energy source.6. The composition of claim 5 , wherein the microwave energy source emits microwave radiation ranging in frequency from 5.85 GHz to 6.65 GHz.7. The composition of claim 6 , wherein greater than 90% of the copper(II) oxide ...

BONDING WIRE FOR SEMICONDUCTOR DEVICE

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. 1. A bonding wire for a semiconductor device comprising:a Cu alloy core material; anda Pd coating layer formed on a surface of the Cu alloy core material, whereinthe Cu alloy core material contains Ni,a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, anda thickness of the Pd coating layer is 0.015 to 0.150 □m.2. The bonding wire for a semiconductor device according to claim 1 , further comprising an Au skin layer on the Pd coating layer.3. The bonding wire for a semiconductor device according to claim 2 , wherein a thickness of the Au skin layer is 0.0005 to 0.050 □m.4. The bonding wire for a semiconductor device according to claim 1 , whereinthe Cu alloy core material further contains at least one element selected from B, In, Ca, P and Ti, anda concentration of the elements is 3 to 100 wt. ppm relative to the entire wire.5. The bonding wire for a semiconductor device according to claim 1 , whereinthe Cu alloy core material further contains Pt or Pd, anda concentration of Pt or Pd contained in the Cu alloy core material is 0.05 to 1.20 wt. %.6. The bonding wire for a semiconductor device according to claim 1 , wherein Cu is present at an outermost surface of the bonding wire. The present invention relates to a bonding wire for a semiconductor device used to connect electrodes on a semiconductor device and wiring of a circuit wiring board such as external leads.As a bonding wire for a semiconductor device which connects electrodes on a semiconductor device and external leads (hereinafter referred to as a “bonding wire”), a thin wire with a wire diameter of about 15 to 50 μm is mainly used today. For a bonding method with bonding wire, there is generally used a thermal compressive bonding technique with the aid of ultrasound, in which a general bonding device, a capillary tool used for bonding by ...

PROCESS FOR PRODUCING BONDED BODY AND PROCESS FOR PRODUCING POWER MODULE SUBSTRATE

Disclosed is provided a process for producing a bonded body by bonding a ceramic member made of a ceramic to a Cu member made of Cu or a Cu alloy, the process including: a laminating step of laminating the Cu member on a first surface side of the ceramic member via a brazing material containing Cu and a eutectic element which has a eutectic reaction with Cu, and via an active metal; and a heating step of heating the ceramic member and the Cu member which are laminated together. 1. A process for producing a bonded body by bonding a ceramic member made of a ceramic and a Cu member made of Cu or a Cu alloy together , the process comprising:a laminating step of laminating the Cu member on a first surface side of the ceramic member via a brazing material containing Cu and a eutectic element which has a eutectic reaction with Cu, and via an active metal; anda heating step of heating the ceramic member and the Cu member which are laminated together.2. The process for producing a bonded body according to claim 1 ,wherein in the laminating step, the brazing material is disposed on the ceramic member, and the active metal is disposed on the Cu member.3. The process for producing a bonded body according to claim 1 ,wherein the eutectic element is one element or two or more elements selected from Ca, Ge, Sr, Sn, Sb, Ba, La, Ce, and Al.4. The process for producing a bonded body according to claim 1 ,wherein in the laminating step, an Al member made of Al or an Al alloy is further laminated on a second surface side of the ceramic member, andwherein in the heating step, the ceramic member, the Cu member, and the Al member which are laminated together are heated.5. The process for producing a bonded body according to claim 1 ,{'sub': 3', '4', '2', '3, 'wherein the ceramic member is made of any one of SiN, AlN, or AlO.'}6. A process for producing a power module substrate in which a Cu plate made of Cu or a Cu alloy is disposed on a first surface of a ceramic substrate claim 1 ,{' ...

Metal particle aggregates, method for producing same, paste-like metal particle aggregate composition, and method for producing bonded body using said paste-like metal particle aggregate composition

A metal particle aggregate includes metal particles and an organic substance. The metal particles include first particles that contain one or both of silver and copper in an amount of 70% by mass or more relative to 100% by mass of all metals and have a particle diameter of 100 nm or more and less than 500 nm at a ratio of 20 to 30% by number, and include second particles that have a particle diameter of 50 nm or more and less than 100 nm, and third particles that have a particle diameter of less than 50 nm at a ratio of 80 to 70% by number in total. Surfaces of the first to third particles are covered with the same protective film.

Bonded functionally graded material structure for heat transfer and cte matching and method of making same

A method for producing a bonded functionally graded Material (FGM) structure, includes the steps of providing a plurality of dissimilar material layers; forming a first group and a second group of through holes alternately on a plurality of intermediate dissimilar material layers and on a bottom dissimilar material layer, wherein the first group of through holes has a diameter larger than a diameter of the second group of through holes; stacking the plurality of dissimilar material layers on top of one another. A first group of through holes on any dissimilar material layer is arranged corresponding to a second group of through holes on a dissimilar material layer stacked above, and a second group of through holes on any dissimilar material layer is arranged corresponding to a first group of through holes on a dissimilar material stacked right below; and bonding the plurality of dissimilar material layers.

Solder joint with a multilayer intermetallic compound structure

A solder joint with a multilayer IMC structure is provided. The solder joint includes a Cu pad, a Sn-based solder, a first, a second, and a third IMC layer. The Cu pad is disposed opposite to the Sn-based solder. The first IMC layer is disposed between the Cu pad and the Sn-based solder. The first IMC layer is a Cu 3 Sn layer. The second IMC layer is disposed between the first IMC layer and the Sn-based solder. The second IMC layer is a (Cu 1-x1-y1 Ni x1 Pd y1 ) 6 Sn 5 layer, wherein x1 is in the range between 0 and 0.15, and y1 is in the range between 0 and 0.02. The third IMC layer is disposed between the second IMC layer and the Sn-based solder. The third IMC layer is a (Cu 1-x2-y2 Ni x2 Pd y2 ) 6 Sn 5 layer, wherein x2 is in the range between 0 and 0.4, y2 is in the range between 0 and 0.02, and x2>x1.

METHOD FOR WELDING A CASE HARDENED COMPONENT

A method for producing a welded part from two components, where at least one of the components has a hardened surface. The method can include case hardening the surface of one of the components using a salt bath nitriding process and then welding the case hardened first component to the second component by gas metal arc welding (GMAW). 1. A method for producing a welded part comprising a first component welded to a second component , the method comprising:case hardening the surface of the first component by a salt bath nitriding process; andwelding the case hardened first component to the second component by a gas metal arc welding process using an aluminum-bronze wire electrode;wherein the weld between the first and second components is substantially free of porosity and the surface hardness of the first component in the vicinity of the weld is substantially undiminished.2. The method of claim 1 , wherein the gas metal arc welding process comprises using a shielding gas comprising argon.3. The method of claim 1 , wherein the first component comprises steel.4. The method of claim 3 , wherein the second component comprises steel.5. The method of claim 1 , and further comprising at least one of grinding and stamping the first component prior to case hardening the surface of the first component.6. The method of claim 1 , wherein the first component comprises a spin tube and the second component comprises a gear case cover.7. An appliance comprising:a case hardened first component welded to a second component;wherein the first component is case hardened by a salt bath nitriding process prior to welding the case hardened first component to the second component by a gas metal arc welding process using an aluminum-bronze wire electrode; andwherein the weld between the first and second components is substantially free of porosity and the surface hardness of the first component in the vicinity of the weld is substantially undiminished.8. The appliance of claim 7 , wherein ...

Higher toughness steel alloy weld deposits and flux-cored welding electrodes for producing higher toughness steel alloy weld deposits

The present disclosure is directed to flux-cored welding electrodes designed to produce higher toughness steel alloy weld deposits, and to the higher toughness weld deposits themselves. The weld deposits may comprise less than 0.20 (or less than 0.15) weight percent silicon. The flux-cored welding electrodes comprise a flux core and a tubular steel strip. The flux core may comprise, by weight percent of the electrode, 0.25-0.30% zirconium, 0.12-0.18% aluminum, and 0-0.11% silicon. The metallic zirconium, aluminum, and silicon may be added to the flux core in the form of silicon-zirconium metal powder and aluminum-zirconium metal powder.

METHOD FOR PRODUCING A CONNECTION BETWEEN TWO METALLIC COMPONENTS

The invention relates to a method for producing a connection between a first metallic component () and a second metallic component (), wherein at least one of the two metallic components () is powder-metallurgically manufactured from a sintering material and the connection is produced by means of soldering in a connection area () formed between the two metallic components (). The surface (), which forms a part of the connection area (), of the metallic component ( or ) manufactured from the sintering material is compacted prior to the soldering. 123234239423. A method for producing a connection between a first metallic component () and a second metallic component () , wherein at least one of the two metallic components ( , ) is manufactured powder-metallurgically from a sintering material and the connection is produced by means of soldering in a connection area () formed between the two metallic components ( , ) , wherein the surface () , which forms a part of the connection area () , of the metallic component ( or ) manufactured from the sintering material is compacted prior to the soldering.29423. The method according to claim 1 , wherein the compaction of the surface () claim 1 , which forms a part of the connection area () claim 1 , of the component ( or ) manufactured powder-metallurgically from a sintering material is carried out to a density of at least 99.5% of the full material density.39423. The method according to claim 1 , wherein the compaction of the surface () claim 1 , which forms a part of the connection area () claim 1 , of the component ( or ) manufactured powder-metallurgically from a sintering material is carried out by means of blasting.4. The method according to claim 3 , wherein for blasting claim 3 , a powder of stainless steel manufactured by means of gas atomization is used as blasting medium.5. The method according to claim 1 , wherein a sintering powder of stainless steel is used as sintering material.6. The method according to claim 1 , ...

Composite nanometal paste containing copper filler and joining method

The present invention addresses the problem of providing a composite nanometal paste which is relatively low in price and is excellent in terms of bonding characteristics, thermal conductivity, and electrical property. The present invention is a copper-filler-containing composite nanometal paste that contains composite nanometal particles each comprising a metal core and an organic coating layer formed thereon. The metal paste contains a copper filler and contains, as binders, first composite nanometal particles and second composite nanometal particles which differ from the first composite nanometal particles in the thermal decomposition temperature of the organic coating layer, wherein the mass proportion W1 of the organic coating layer in the first composite nanometal particles is in the range of 2-13 mass %, the mass proportion W2 of the organic coating layer in the second composite nanometal particles is in the range of 5-25 mass %, and these particles satisfy the relationships W1.

SUBSTRATE ON SUBSTRATE PACKAGE

Embodiments herein may relate to a patch on interposer (PoINT) architecture. In embodiments, the PoINT architecture may include a plurality of solder joints between a patch and an interposer. The solder joints may include a relatively high temperature solder ball and a relatively low temperature solder paste that at least partially surrounds the solder ball. Other embodiments may be described and/or claimed. 1. A package comprising:a first substrate with a first side and a second side opposite the first side;a second substrate with a first side and a second side opposite the first side, wherein the first substrate and second substrate define a space between the first side of the first substrate and the first side of the second substrate;a solder ball disposed within the space and physically coupled with the first side of the first substrate and the first side of the second substrate; anda solder paste positioned within the space and physically coupled with the solder ball, the first side of the first substrate, and the first side of the second substrate, wherein the solder paste partially surrounds the solder ball while the solder ball is partially exposed.2. (canceled)3. The package of claim 1 , wherein the solder ball includes an alloy of tin claim 1 , silver and copper claim 1 , or an alloy of tin and bismuth.4. The package of claim 1 , wherein the solder paste includes epoxy.5. The package of claim 1 , wherein the first substrate has approximately 20 inptut/output connections or more per millimeter claim 1 , or has a line/space measurement of less than approximately 20/20 micrometers.6. The package of claim 1 , wherein the second substrate has approximately 10 input/output connections or less per millimeter claim 1 , or has a line/space measurement of greater than approximately 20/20 micrometers.7. The package of claim 1 , wherein the first substrate includes a die coupled with the second side of the first substrate by a solder joint without being in contact ...

Manufacturing method of copper bonded part

A manufacturing method of a copper bonded part in which a first copper member and a second copper member are bonded together. The first copper member and the second copper member are made of copper or a copper alloy, and at least one of the first copper member and the second copper member includes a copper porous body made of copper or a copper alloy. This manufacturing method has a bonding material disposing step S01 of disposing a bonding material between the first copper member and the second copper member, and a reduction sintering step S02 of heating and holding the first copper member, the second copper member, and the bonding material in a reducing atmosphere in a range of 600° C. or higher and 1,050° C. or lower. The bonding material contains a copper oxide or a mixture of metallic copper and the copper oxide.

SINTERABLE FILMS AND PASTES AND METHODS FOR USE THEREOF

Provided herein are sinterable films and pastes as conductive die attach materials having advantageous properties for use in die semiconductor packages. Also provided are formulations useful for the preparation of such films and pastes, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In certain aspects, the invention relates to articles comprising such sintering films and pastes adhered to a suitable substrate therefor. 1. A composition for a sintering film , comprising:a thermosetting resin or thermoplastic resin component, selected from the group consisting of one or more epoxy monomers, oligomers, or polymers, an acrylic monomer, oligomer, or polymer, a phenolic, a novalac, a polyurethane, a cyanate ester, a polyvinyl alcohol, a polyester, a polyurea, a polyvinyl acetal resin, a phenoxy resin, a maleimide, a bismaleimide, a polyimide, or mixtures thereof;one or more conductive fillers; andoptionally an organic diluent,wherein the composition undergoes lamination onto a wafer at a temperature of 100° C. or lower and a pressure of 40 psi or lower; and{'sup': '2', 'wherein the composition, when cured or sintered, has a die shear strength of at least 1.0 kg/mmat 260° C.'}2. The composition of claim 1 , wherein the composition claim 1 , when attached to a die claim 1 , bonds to a substrate at a pressure of 0.2 kg/mmto 1 kg/mm.3. The composition of claim 1 , further comprising one or more of a fluxing agent claim 1 , a flow additive claim 1 , an adhesion promoter claim 1 , a rheology modifier claim 1 , a conductivity promoter claim 1 , a surfactant claim 1 , a toughening agent claim 1 , a film flexibilizer claim 1 , an epoxy-curing catalyst claim 1 , a curing agent claim 1 , a radical polymerization regulator claim 1 , a radical stabilizer claim 1 , or mixtures thereof.4. The composition of claim 1 , wherein the ...

METAL PARTICLE AND METHOD FOR PRODUCING THE SAME, COVERED METAL PARTICLE, AND METAL POWDER

A metal particle having a particle diameter of 10 μm or more and 1000 μm or less and includes Cu and trace elements and a total mass content of P and S, among other trace elements, is 3 ppm or more and 30 ppm or less. A method for producing a metal particle including producing a molten metal material by melting a metal material in a crucible, wherein Cu as determined in GDMS analysis is over 99.995% and a total of P and S is 3 ppm or more and 30 ppm or less; applying a pressure of 0.05 MPa or more and 1.0 MPa or less to drip the molten metal material through an orifice, thereby producing a molten metal droplet; and rapidly solidifying the molten metal droplet using an inert gas whose oxygen concentration is 1000 ppm or less. 16-. (canceled)7. A metal particle having a particle diameter of 10 μm or more and 1000 μm or less and including Cu and trace elements , wherein a Cu mass content as determined in GDMS analysis is over 99.995% and a total mass content of P and S , among other trace elements , is 3 ppm or more and 30 ppm or less.8. A covered metal particle claim 7 , wherein a surface of the metal particle according to is covered with an Ni layer.9. The covered metal particle according to claim 8 , wherein a surface of the Ni layer is covered with a solder layer.10. A metal powder comprising metal particles according to .11. A metal powder comprising covered metal particles according to .12. A metal powder comprising covered metal particles according to .13. A method for producing a metal particle claim 9 , the method comprising:a step a of producing a molten metal material by melting a metal material in a crucible, wherein a Cu mass content as determined in GDMS analysis of the metal material is over 99.995% and a total mass content of P and S of the metal material is 3 ppm or more and 30 ppm or less;a step b of applying a pressure of 0.05 MPa or more and 1.0 MPa or less to an inside of the crucible to drip the molten metal material through an orifice whose ...

COPPER-BASED BRAZING MATERIAL AND USE OF THE BRAZING MATERIAL

A copper-based brazing material comprises an alloy having nickel in a proportion of from 20 to 35 percent by weight, zinc in a proportion of from 5 to 20 percent by weight, manganese in a proportion of from 5 to 20 percent by weight, chromium in a proportion of from 1 to 10 percent by weight, silicon in a proportion of from 0.1 to 5 percent by weight and molybdenum in a proportion of from 0 to 7 percent by weight, each based on the total weight of the alloy, and the remainder being copper and unavoidable impurities. The alloy is in particular free from boron, phosphorus and lead. The brazing material can be used for induction brazing of components made of iron materials for exhaust systems in motor vehicles. 1. A copper-based brazing material , in particular for use in induction brazing of stainless steel , wherein the brazing material comprises an alloy having nickel in a proportion of from 20 to 35 percent by weight , zinc in a proportion of from 5 to 20 percent by weight , manganese in a proportion of from 5 to 20 percent by weight , chromium in a proportion of from 1 to 10 percent by weight , silicon in a proportion of from 0.1 to 5 percent by weight and molybdenum in a proportion of from 0 to 7 percent by weight , each based on the total weight of the alloy , and the remainder being copper and unavoidable impurities , wherein the alloy is free from boron , phosphorus and lead.2. The brazing material according to claim 1 , wherein the brazing material has a liquidus temperature of at most 1150° C.3. The brazing material according to claim 1 , wherein the proportion of zinc is within a range of from 5 to 15 percent by weight claim 1 , preferably from 5 to 12 percent by weight.4. The brazing material according to claim 1 , wherein the proportion of manganese is within a range of from 7 to 19 percent by weight claim 1 , preferably from 8 to 18 percent by weight.5. The brazing material according to claim 1 , wherein the proportion of chromium is within a range of ...

ELECTRODES FOR FORMING AUSTENITIC AND DUPLEX STEEL WELD METAL

The disclosed technology generally relates to consumable electrode wires and more particularly to consumable electrode wires having a core-shell structure, where the core comprises chromium. In one aspect, a welding wire comprises a sheath having a steel composition and a core surrounded by the sheath. The core comprises chromium (Cr) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire, manganese (Mn) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire, nickel (Ni) at a concentration between zero and about 5 weight % on the basis of the total weight of the welding wire, and carbon (C) at a concentration greater than zero weight %, wherein concentrations of Ni, C and Mn are such that [Ni]+30[C]+0.5[Mn] is less than about 12 weight %, wherein [Ni], [C], and [Mn] represent weight percentages of respective elements on the basis of the total weight of the welding wire. The disclosed technology also relates to welding methods and systems adapted for using the chromium-comprising electrode wires. 1. A welding wire configured to serve as an electrode during welding , the welding wire comprising:a sheath having a steel composition; and chromium (Cr) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire,', 'manganese (Mn) at a concentration between about 12 weight % and about 18 weight % on the basis of the total weight of the welding wire,', 'nickel (Ni) at a concentration less than about 5 weight % on the basis of the total weight of the welding wire, and', 'carbon (C) at a concentration greater than zero and less than about 1 weight % on the basis of the total weight of the welding wire,', 'wherein concentrations of Ni, C and Mn are such that [Ni]+30[C]+0.5[Mn] is less than about 12 weight %, wherein [Ni], [C], and [Mn] represent weight percentages of respective elements on ...

Palladium (pd)-coated copper wire for ball bonding

A palladium coated copper wire for ball bonding includes a core formed of pure copper or copper alloy having a purity of 98% by mass or more, and a palladium draw coated layer coated on the core. The copper wire has a diameter of 10 to 25 μm, and the palladium drawn layer contains sulfur, phosphorus, boron or carbon.

Self-adjusting clad wire for welding applications

Disclosed are self-adjusting wires, methods of making these self-adjusting wires, and thermal joining processes (such as gas metal arc welding or laser brazing) and other processes using these self-adjusting wires. The wires have an outer layer of a metal or metal alloy suitable as a joining material in the joining process and a core of a shape-memory alloy. The outer layer may be continuous about the exterior of the core or discontinuous such as a longitudinal strip or strips. The shape-memory alloy of the self-adjusting wire is “trained” to a straight-wire shape in its austenite phase. In using the self-adjusting wire in a process, a bent end of the self-adjusting wire is straightened by heating the self-adjusting wire above the austenite phase transition temperature of the shape-memory alloy.

BONDED BODY, POWER MODULE SUBSTRATE, POWER MODULE AND METHOD FOR PRODUCING BONDED BODY

There is provided a bonded body of the invention in which a ceramic member formed of a ceramic containing Al and a Cu member formed of Cu or a Cu alloy are bonded to each other, in which a bonding portion is formed between the ceramic member and the Cu member, an active metal compound region formed of a compound containing active metal is formed on the bonded portion on the ceramic member side, and an Al concentration of the bonding portion having a thickness range of 0.5 μm to 3 μm from one surface of the active metal compound region on the Cu member side towards the Cu member side is in a range of 0.5 at % to 15 at %. 1. A bonded body in which a ceramic member formed of a ceramic containing Al and a Cu member formed of Cu or a Cu alloy are bonded to each other ,wherein a bonding portion is formed between the ceramic member and the Cu member, an active metal compound region formed of a compound containing active metal is formed on the bonded portion on the ceramic member side, andan Al concentration of the bonding portion having a thickness range of 0.5 μm to 3 μm from one surface of the active metal compound region on the Cu member side towards the Cu member side is in a range of 0.5 at % to 15 at %.2. The bonded body according to claim 1 ,wherein the one surface of the active metal compound region is a surface having ruggedness and the thickness range is a range from a point of the ruggedness nearest to the Cu member.3. The bonded body according to claim 1 ,{'sub': 2', '3, 'wherein the ceramic member is configured of any of AlN and AlO.'}4. The bonded body according to claim 1 ,wherein the active metal compound region contains any of nitrides of an active metal and oxides of an active metal.5. A power module substrate including the bonded body according to claim 1 ,wherein a metal layer is formed on a surface of the ceramic member opposite to a surface to which a circuit layer is bonded, by using the Cu member as the circuit layer.6. The power module substrate ...

Forming a solder joint between metal layers

Forming a solder joint between metal layers by preparing a structure having solder material placed between two metal layers and heating the structure to grow an intermetallic compound in a space between the two metal layers. Growing the intermetallic compound includes setting a first surface, in contact with the solder material between the two metal layers, to a first temperature, thereby enabling growth of the intermetallic compound; setting a second surface, in contact with the solder material between the two metal layers, to a second temperature, wherein the second temperature is higher than the first temperature; and maintaining a temperature gradient (temperature/unit thickness) between the two metal layers at a predetermined value or higher until the intermetallic compound substantially fills the space between the two metal layers.

Edm milling electrode

An apparatus for an electrical discharge machine for milling a shaped cavity in a workpiece includes a hollow electrode having a metallic inner shell with at least one passage for receiving dielectric fluid. A layer including at least one brass alloy is provided over the inner sheel and exhibits a zinc content greater than a zinc content of the inner shell.

Mixed Oxide Materials for Helium Leak Tight, Oxidation Resistant and High Strength Joints Between High Temperature Engineering Materials

A high strength joint material. A material for a joint between a ceramic body and a metal body. A material for a joint between a ceramic body and a ceramic body.

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

SECONDARY BATTERY

A secondary battery includes a bare cell and a protective circuit module. The protective circuit module includes a protective circuit board, a first terminal, and a second terminal. The first and second terminals are electrically connected to positive and negative electrode tabs of the bare cell. The positive electrode tab and the negative electrode tab are respectively soldered to the first terminal and the second terminal, solder layers are on respective surfaces of the positive electrode tab soldered to the first terminal, and a solder layer is on one or more of the second terminal or the negative electrode tab. 1. A secondary battery , comprising:a bare cell including an electrode assembly, electrode tabs, and a case accommodating the electrode assembly, the electrode assembly including a separator between a positive electrode plate and a negative electrode plate, the electrode tabs including positive and negative electrode tabs respectively extending from the positive and negative electrode plates; anda protective circuit module outside the case and including a protective circuit board, a first terminal, and a second terminal, the first and second terminals on the protective circuit board and electrically connected to the positive and negative electrode tabs, respectively, wherein:the positive electrode tab and the negative electrode tab are respectively soldered to the first terminal and the second terminal,solder layers are on respective surfaces of the positive electrode tab soldered to the first terminal, anda solder layer is on one or more of the second terminal or the negative electrode tab.2. The secondary battery as claimed in claim 1 , wherein:the positive electrode tab includes a first surface facing the first terminal and a second surface opposite the first surface, anda first solder layer is on the first surface and a second solder layer is on the second surface.3. The secondary battery as claimed in claim 2 , wherein:the positive electrode tab ...

Metal particle

Disclosed is a metal particle that includes Cu and Sn, the metal particle having a metal matrix composed of Sn—Cu alloy, and a nano-sized intermetallic compound composed of Cu and Sn, and the metal particle having at least inside thereof an alloyed structure in which the metal matrix and the intermetallic compound form an endotaxial junction.

Resistance spot welding of copper workpieces

A method of joining together adjacent overlapping copper workpieces by way of resistance spot welding involves providing a workpiece stack-up that includes a first copper workpiece and a second copper workpiece that lies adjacent to the first copper workpiece. The faying surface of the first copper workpiece includes a projection that ascends beyond a surrounding base surface of the faying surface and makes contact, either directly or indirectly, with an opposed faying surface of the second copper workpiece. Once provided, a compressive force is applied against the first and second copper workpieces and an electric current is passed momentarily through the first and second copper workpieces. The electric current initially flows through the projection to generate and concentrate heat within the projection prior to the projection collapsing. This concentrated heat surge allows a metallurgical joint to be established between the first and second copper workpieces.

SINTER PASTE WITH PARTIALLY OXIDIZED METAL PARTICLES

A sinterable mixture and method of producing the mixture are provided containing: (a) metal particles and (b) an organic compound represented by Formula I: R—COR(I), wherein Ris an aliphatic residue having 8 to 32 carbon atoms, and Rcomprises either an —OM moiety or an —X—Rmoiety, wherein M is a cation, wherein X is selected from the group consisting of O, S, N—R, and wherein Ris a hydrogen atom or an aliphatic residue and Ris a hydrogen atom or an aliphatic residue, wherein a molar ratio of carbon present in the organic compound (b) to oxygen present in the metal particles (a) is in a range of 3 to 50. The mixture is used for connecting components in a sandwich arrangement with the mixture in between and sintering the sandwich arrangement. 119.-. (canceled)21. The mixture according to claim 20 , wherein at least one metal of the metal particles (a) is selected from the group consisting of silver claim 20 , copper claim 20 , nickel claim 20 , aluminum claim 20 , and alloys and mixtures thereof.22. The mixture according to claim 20 , wherein at least one metal of the metal particles (a) is selected from the group consisting of silver claim 20 , copper claim 20 , and mixtures of copper and silver.23. The mixture according to claim 20 , wherein the organic compound (b) is a C-Cfatty acid claim 20 , optionally a C-Cfatty acid or a C-Cfatty acid.24. The mixture according to claim 20 , wherein the organic compound (b) is selected from the group consisting of octanoic acid claim 20 , stearic acid claim 20 , lauric acid claim 20 , palmitic acid claim 20 , and any mixtures thereof.25. The mixture according to claim 20 , wherein the paste contains an additional polymer that comprises oxygen atoms.26. The mixture according to wherein the organic compound (b) is present in a form of a coating on the particles (a).27. The mixture according to claim 20 , wherein the organic compound (b) is present in an amount of 0.1 to 4.0% by weight claim 20 , optionally between 0.3 and 3.0% by ...

BRAZE GEL, BRAZING PROCESS, AND BRAZING ARTICLE

A braze gel includes a braze powder, a braze binder, and a viscosity reducer. The braze gel has a gel viscosity sufficiently low to permit dip coating of a component with the braze gel to apply a braze coating of the braze gel to the component. A brazing process includes applying the braze gel to a portion of a component. The brazing process also includes drying the braze gel to form a braze coating on the component to form a braze-coated component. A brazing article includes a component and a braze coating over a portion of the component. The component may have structural features having a spacing of less than about 5 mm and a depth of at least about 1 mm, which may be honeycomb cells. The component may be a turbine component. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. A process comprising:applying a braze gel having a gel viscosity to a portion of a component comprising an end of the component, the braze gel comprising a braze powder, a braze binder, and a viscosity reducer;drying the braze gel to form a braze coating on the portion of the component to form a braze-coated component comprising the component and the braze coating; andheating the braze coating to a brazing temperature to braze the end of the braze-coated component to a backing member;wherein the gel viscosity is lower than a paste viscosity of a braze paste comprising the braze powder and the braze binder with no viscosity reducer, the gel viscosity permitting dip coating of the component with the braze gel.8. The process of further comprising combining the braze powder claim 7 , the braze binder claim 7 , and the viscosity reducer to form the braze gel having the gel viscosity such that the viscosity reducer reduces the gel viscosity of the braze gel to permit dip coating of the component with the braze gel to apply the braze coating of the braze gel to the portion of the component.9. (canceled)10. The process of claim 9 , wherein the brazing temperature is in ...

HIGH TEMPERATURE RESISTANT SILICON JOINT FOR THE JOINING OF CERAMICS

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with a high purity silicon or a silicon alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. 1. A multi-layer ceramic plate assembly for use in semiconductor processing , said multi-layer ceramic plate assembly comprising:an upper plate layer, said upper plate layer adapted to support a semiconductor substrate, said upper plate layer comprising aluminum nitride;a lower plate layer, said lower plate layer comprising aluminum nitride;said upper plate layer and said lower plate layer joined together to form an interior space between said upper plate layer and said lower plate layer within an annulus of an annular joining layer, andan annular joining layer disposed between an aluminum nitride surface of said upper plate layer and an aluminum nitride surface of said lower plate layer, wherein said annular joining layer joins an outer periphery of said upper plate layer to an outer periphery of said lower plate layer, wherein said joining layer comprises more than 98% silicon by weight, and wherein said joining layer hermetically seals said interior space between said upper plate layer and said lower plate layer from the exterior of said ceramic plate assemble through said joining layer.2. The multi-layer ceramic plate assembly of wherein said joining layer comprises silicon of greater than 99% aluminum by weight.3. The multi-layer ceramic plate assembly of further comprising a heater residing between said upper plate layer and said lower plate layer.4. The multi-layer ceramic plate assembly of further comprising a heater residing ...

BONDING MATERIAL

A bonding material disclosed in this specification contains high melting point metal particles, low melting point metal particles, and a thermosetting flux resin. A mass proportion of the high melting point metal particles with respect to a total mass of the high melting point metal particles and the low melting point metal particles is 55% to 75%. 1. A bonding material comprising:high melting point metal particles;low melting point metal particles whose melting point is lower than a melting point of the high melting point metal particles; anda thermosetting flux resinwherein a mass proportion of the high melting point metal particles with respect to a total mass of the high melting point metal particles and the low melting point metal particles is 55% to 75%.2. The bonding material according to claim 1 , wherein the mass proportion of the high melting point metal particles is 65% to 75%.3. The bonding material according to claim 1 , wherein the high melting point metal particles are any of Cu claim 1 , a Cu alloy claim 1 , Al claim 1 , Ag claim 1 , and Au claim 1 , and have a particle size of 5 μm to 30 μm.4. The bonding material according to claim 1 , wherein the low melting point metal particles are an Sn alloy and have a particle size of 20 μm to 40 μm.5. The bonding material according to claim 1 , wherein surfaces of the high melting point metal particles are plated with Sn or an Sn alloy.6. The bonding material according to claim 1 , wherein the flux resin includes an epoxy resin. The disclosure of Japanese Patent Application No. 2017-181702 filed on Sep. 21, 2017 including the specification, drawings and abstract is incorporated herein by reference in its entirety.The technology disclosed in this specification refers to a bonding material, and particularly, a bonding material that is unlikely to cause the occurrence of whiskers.A bonding material (solder material) obtained by mixing metal particles with a high melting point such as copper (Cu) and metal ...

Fuel rail

To obtain a fuel rail that maintains low hardness and good formability before being formed into a tube stock, can be made to easily form a thin absorbing wall surface, and has a high hardness and pressure resistance so as to be usable not only at a fuel pressure of 400 kPa or less, but also at a relatively high fuel pressure of 400 kPa or more. A fuel rail for port injection that is provided with a fuel pressure absorbing wall surface 1 and is used at a fuel pressure of 200 kPa to 1400 kPa. The fuel rail comprises an iron alloy that includes chemical components of C, Si, Mn, P, S, Nb, and Mo. The fuel rail has an internal volume of at least 60 cc and an amount of change in internal volume, when pressure is applied, of at least 0.5 cc/MPa. A bainitic structure can be precipitated by brazing the fuel rail in a furnace during manufacturing.

PROCESS FOR JOINING TWO METAL PARTS BY BRAZE-WELDING

A process for joining two parts by braze-welding, including forming a joint, between two surfaces to be joined, and a fillet. The composition of the filler metal used to form the fillet is different from that used to form the joint, to provide the joint with a higher ductility. The method can, for example, be applied to production of high-pressure compressor guide-vane sectors for a turbomachine. 19-. (canceled)10. A method for joining two metal parts by brazing , comprising:forming, by a filler metal, a bonding joint between two bonding surfaces and a fillet,wherein the chemical composition of the filler metal for forming the fillet is different from that of the bonding joint, to have greater ductility.11. A method according to claim 10 , wherein the bonding joint is a capillary joint.12. A method according to claim 10 , wherein brazing temperature for the fillet is lower than liquidus temperature of the filler metal of the bonding joint.13. A method according to claim 10 , wherein the two metal parts are made of either a nickel-based or cobalt-based superalloy.14. A method according to claim 13 , wherein the filler metal for forming the bonding joint is either a nickel-based or cobalt-based alloy including at least one flux compound.15. A method according to claim 14 , wherein the flux compound is at least one element from among boron claim 14 , silicon claim 14 , and phosphorus.16. A method according to claim 10 , wherein the filler metal of the fillet is a copper-based alloy claim 10 , or CuMnNi930 claim 10 , or a manganese-based alloy claim 10 , or a precious-metal alloy.17. A method according to claim 10 , wherein one part of the two metal parts is a turbine engine compressor blade and the other part is a collar.18. A method according to claim 17 , wherein the joining forms a stator vane sector. The present invention relates to the brazing of parts made of a nickel-based or cobalt-based superalloy, that is to say made of a refractory alloy having a content by ...

Junction and electrical connection

A junction at which at least two conductors are connected together includes a compound region containing Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn. The compound region forms a nanocomposite metal diffusion region with the conductor.

Actively brazed joint and method of processing

A method of processing a joint, including forming an actively brazed joint in a vacuum furnace, wherein the actively brazed joint is formed from at least two components coupled together by a volume of a joining metal alloy having a solidus temperature and a liquidus temperature, wherein the joining metal alloy is heated to a first temperature that is higher than the liquidus temperature in the vacuum furnace. The method also includes cooling the actively brazed joint to a second temperature lower than the solidus temperature, and maintaining the second temperature within the vacuum furnace for a predefined duration to form at least one region of segregated crystallization within the volume of the joining metal alloy, the at least one region of segregated crystallization is configured to increase the liquidus temperature of a layer of brazed metal, formed from the joining metal alloy, between the at least two components.

PRINTED CIRCUIT BOARD WITH FLUX RESERVOIR

Method and apparatus for establishing an electrical interconnection between an electrical lead and a printed circuit board (PCB), such as a PCB used in a data storage device. In some embodiments, the PCB includes a multi-layer substrate having at least one conductive layer and at least one electrically insulative layer. An electrically conductive pad is provided on a facing surface of the substrate in electrical communication with the at least one conductive layer. A flux reservoir is placed adjacent the pad which extends from the facing surface into the substrate. A solder mask layer is provided on the facing surface of the base structure which surrounds the pad and extends into the reservoir. The solder mask layer and reservoir collect liquid flux from a soldering operation used to form a solder joint between the pad and a conductive lead of an electronic component. 1. A printed circuit board (PCB) comprising:a multi-layer substrate having at least one conductive layer and at least one electrically insulative layer;an electrically conductive pad on a facing surface of the substrate in electrical communication with the at least one conductive layer;a flux reservoir adjacent the pad which extends from the facing surface into the substrate; anda solder mask layer on the facing surface of the base structure which surrounds the pad and extends into the reservoir, the solder mask layer and reservoir configured to collect liquid flux responsive to a soldering operation used to form a solder joint between the pad and a conductive lead of an electronic component.2. The PCB of claim 1 , wherein the PCB is a rigid PCB.3. The PCB of claim 1 , wherein the PCB is a flexible PCB.4. The PCB of claim 1 , wherein the solder mask layer is sloped in a direction toward the flux reservoir.5. The PCB of claim 1 , wherein the flux reservoir is a non-plated-through hole (NPTH).6. The PCB of claim 1 , wherein the solder mask coats a sidewall and a bottom surface of the flux reservoir.7. ...

Cu-Ni-Sn Based Copper Alloy Foil, Copper Rolled Product, Electronic Device Parts and Autofocus Camera Module

Provided is a thinner Cu—Ni—Sn based copper alloy foil that has a foil thickness of 0.1 mm or less, has improved solder wettability and improved solder adhesion strength, and can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules; a copper rolled product; an electronic device part; and an autofocus camera module. The Cu—Ni—Sn based copper alloy foil according to one embodiment of the present invention has a foil thickness of 0.1 mm or less; and contains from 14% by mass to 22% by mass of Ni, from 4% by mass to 10% by mass of Sn, the balance being copper and inevitable impurities; and has a maximum height roughness Rz of from 0.1 μm to 1 μm, on a surface in a direction parallel to a rolling direction. 1. A Cu—Ni—Sn based copper alloy foil having a foil thickness of 0.1 mm or less , the Cu—Ni—Sn based copper alloy foil comprising: from 14% by mass to 22% by mass of Ni; and from 4% by mass to 10% by mass of Sn; the balance being Cu and inevitable impurities; and the Cu—Ni—Sn based copper alloy having a maximum height roughness Rz of from 0.1 μm to 1 μm , on a surface in a direction parallel to a rolling direction.2. The Cu—Ni—Sn based copper alloy foil according to claim 1 , wherein the Cu—Ni—Sn based copper alloy foil has a tensile strength of 1100 MPa or more in a direction parallel to the rolling direction.3. The Cu—Ni—Sn based copper alloy foil according to claim 1 , wherein the Cu—Ni—Sn based copper alloy foil has a total content of Mn claim 1 , Ti claim 1 , Si claim 1 , Al claim 1 , Zr claim 1 , B claim 1 , Zn claim 1 , Nb claim 1 , Fe claim 1 , Co claim 1 , Mg claim 1 , and Cr of from 0% by mass to 1.0% by mass.4. A copper rolled product comprising the Cu—Ni—Sn based copper alloy foil according to .5. An electronic device part comprising the Cu—Ni—Sn based copper alloy foil according to .6. The electronic device part according to claim 5 , wherein the electronic device part is an autofocus camera ...

Cu-Ni-Sn Based Copper Alloy Foil, Copper Rolled Product, Electronic Device Parts and Autofocus Camera Module

Provided is a thinner Cu—Ni—Sn based copper alloy foil that has a foil thickness of 0.1 mm or less, has improved solder wettability and improved solder adhesion strength, and can be suitably used as a conductive spring material for use in electronic device parts such as autofocus camera modules; a copper rolled product; an electronic device part; and an autofocus camera module. The Cu—Ni—Sn based copper alloy foil according to one embodiment of the present invention has a foil thickness of 0.1 mm or less; and contains from 14% by mass to 22% by mass of Ni, from 4% by mass to 10% by mass of Sn, the balance being copper and inevitable impurities; and has a 60-degrees glossiness G60of from 200 to 600 on a surface as measured in a direction parallel to a rolling direction. 1. A Cu—Ni—Sn based copper alloy foil having a foil thickness of 0.1 mm or less , the Cu—Ni—Sn based copper alloy foil comprising: from 14% by mass to 22% by mass of Ni; and from 4% by mass to 10% by mass of Sn; the balance being Cu and inevitable impurities; and the Cu—Ni—Sn based copper alloy having a 60-degrees glossiness G60of from 200 to 600 on a surface as measured in a direction parallel to a rolling direction.2. The Cu—Ni—Sn based copper alloy foil according to claim 1 , wherein the Cu—Ni—Sn based copper alloy foil has a tensile strength of 1100 MPa or more in a direction parallel to the rolling direction.3. The Cu—Ni—Sn based copper alloy foil according to claim 1 , wherein the Cu—Ni—Sn based copper alloy foil has a total content of Mn claim 1 , Ti claim 1 , Si claim 1 , Al claim 1 , Zr claim 1 , B claim 1 , Zn claim 1 , Nb claim 1 , Fe claim 1 , Co claim 1 , Mg claim 1 , and Cr of from 0% by mass to 1.0% by mass.4. A copper rolled product comprising the Cu—Ni—Sn based copper alloy foil according to .5. An electronic device part comprising the Cu—Ni—Sn based copper alloy foil according to .6. The electronic device part according to claim 5 , wherein the electronic device part is an autofocus ...

Method for manufacturing heterometallic assembly and heterometallic assembly

A method for manufacturing a dissimilar metal joint product includes: spraying a metal powder capable of being joined to a steel material to at least a part of a surface of an aluminum or aluminum-alloy material at a low temperature and at a high speed to form a coating thereon; disposing the aluminum or aluminum-alloy material and the steel material such that the coating and the steel material face each other; and performing brazing using a brazing material or welding using a welding material between the coating and the steel material.

METHOD FOR PRODUCING COPPER PARTICLES, COPPER PARTICLES, AND COPPER PASTE

A method for producing copper particles includes a preparation step and a heating step. In the preparation step, a copper compound, a salt of a main group metal, and a polyhydric alcohol are prepared. In the heating step, a mixture of the copper compound, the salt of the main group metal, and the polyhydric alcohol is heated. Preferably, the main group metal is at least one selected from the group consisting of lithium, beryllium, sodium, magnesium, aluminum, potassium, calcium, zinc, gallium, germanium, rubidium, strontium, cadmium, indium, tin, antimony, cesium, and barium. 1. A method for producing copper particles , the method comprising:preparing a copper compound, a salt of a main group metal, and a polyhydric alcohol; andheating a mixture of the copper compound, the salt of the main group metal, and the polyhydric alcohol to produce copper particles, whereinthe copper particles have a specific characteristic in their particle size distribution as measured by dynamic light scattering, andthe specific characteristic is that the particle size distribution has two peaks or more, one of the two peaks is in a range of particle sizes of less than 1,000 nm and the other of the two peaks is in a range of particle sizes of greater than or equal to 1,000 nm, and a ratio of a maximum value of a scattering intensity distribution associated with the other peak in the range of particle sizes of greater than or equal to 1,000 nm to a maximum value of the scattering intensity distribution associated with the one peak in the range of particle sizes of less than 1,000 nm is at least 0.3 and no greater than 1.5.2. The method for producing copper particles according to claim 1 , whereinthe main group metal is at least one selected from the group consisting of lithium, beryllium, sodium, magnesium, aluminum, potassium, calcium, zinc, gallium, germanium, rubidium, strontium, cadmium, indium, tin, antimony, cesium, and barium.3. The method for producing copper particles according to ...

MOLDED SOLDER AND MOLDED SOLDER PRODUCTION METHOD

Molded solder includes first metal powder and second metal powder. The first metal powder has a first solidus temperature and a first liquidus temperature and includes an alloy containing metal elements. The second metal powder has a melting temperature or a second solidus temperature and a second liquidus temperature and includes single metal element or an alloy containing metal elements. The melting temperature and the second liquidus temperature are higher than the first liquidus temperature. The molded solder is so constructed that a mixture of the first metal powder and the second metal powder are press-molded. The molded solder is so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature. 1. Molded solder comprising:first metal powder having a first solidus temperature and a first liquidus temperature, the first metal powder including an alloy containing a plurality of metal elements;second metal powder having a melting temperature or a second solidus temperature and a second liquidus temperature, the second metal powder including single metal element or an alloy containing a plurality of metal elements, the melting temperature and the second liquidus temperature being higher than the first liquidus temperature;the molded solder being so constructed that a mixture of the first metal powder and the second metal powder are press-molded; andthe molded solder being so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature.2. The molded solder according to claim 1 , whereina temperature difference between the first liquidus temperature and the melting temperature ...

Electroconductive material, and connection method and connection structure using the same

An electroconductive material that includes a metal component containing a first metal and a second metal having a higher melting point than the first metal, and has a configuration in which the first metal is Sn or an alloy containing Sn, and the second metal is a Cu—Cr alloy which forms, with the first metal, an intermetallic compound exhibiting a melting point of 310° C. or higher. The first metal can be Sn alone or an alloy containing Sn and at least one of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te, and P.

Conductive joint article and method for manufacturing same

It is an objective of the invention to provide a conductive joint article exhibiting electrical joinability comparable to that of solder joining of easy-to-solder joinable metals even when a joined member of the conductive joint article is made of a hard-to-solder joinable metal. There is provided a conductive joint article with conductive joined members electrically joined via a joining layer, at least one of the joined members being made of a hard-to-solder joinable metal. The joining layer comprises an oxide glass phase and a conductive metal phase. The oxide glass phase includes vanadium as a major constituent and at least one of phosphorus, barium and tungsten as an accessory constituent, and has a glass transition point of 390° C. or less. And, connection resistance between the joined members exhibits less than 1×10 −5 Ω/mm 2 .

Multilayered Metal Nano and Micron Particles

A sintering powder, wherein a least a portion of the particles making up the sintering powder comprise: a core comprising a first material; and a shell at least partially coating the core, the shell comprising a second material having a lower oxidation potential than the first material.

Brazing Techniques And Articles Produced By Brazing

Various embodiments may include a fuel rail assembly comprising: a fuel rail; a second component; and a brazed joint securing the fuel rail and the second component together. The brazed joint may include a brazing filler material distributed between a first joining area formed by a surface portion of the fuel rail and second joining area formed by a surface portion of the second component. At least one of the joining areas comprises an elongated slot adapted to contain the brazing filler material.

SOLDER JOINT

The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)P, and a phase containing microcrystals of NiP. 1. A solder joint comprising:a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; anda joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, whereinthe Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P,{'sub': 3', '3, 'the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu)P, and a phase containing microcrystals of NiP.'}2. The solder joint according to claim 1 , wherein the microcrystals of the NiCuP ternary alloy include microcrystals having an average particle diameter of about 10 nm or less.3. The solder joint according to claim 1 , wherein the microcrystalline layer is free of columnar crystals or particles having a major axis of 75 nm or greater.4. The solder joint according to claim 1 , wherein the solder material contains Sn claim 1 , Ag ...

WIRE FOR GAS-SHIELDED ARC WELDING

A wire for gas-shielded arc welding includes, based on a total mass of the wire: C: 0.01 mass % or more and 0.10 mass % or less, Si: 0.05 mass % or more and 0.55 mass % or less, Mn: 1.60 mass % or more and 2.40 mass % or less, Ti: 0.05 mass % or more and 0.25 mass % or less, Cu: 0.01 mass % or more and 0.30 mass % or less, S: 0.001 mass % or more and 0.020 mass % or less, N: 0.0045 mass % or more and 0.0150 mass % or less, Al: 0.10 mass % or less, and P: 0.025 mass % or less, with the remainder being Fe and inevitable impurities. In the wire, the following relationship is satisfied: 0.1≤[Ti]/[Si]≤3.0, where [Si] is the content of Si (mass %) and [Ti] is the content of Ti (mass %). 1. A wire for gas-shielded arc welding , consisting of , based on a total mass of the wire:C: 0.01 mass % or more and 0.10 mass % or less;Si: 0.05 mass % or more and 0.55 mass % or less;Mn: 1.60 mass % or more and 2.40 mass % or less;Ti: 0.05 mass % or more and 0.25 mass % or less;Cu: 0.01 mass % or more and 0.30 mass % or less;S: 0.001 mass % or more and 0.020 mass % or less;N: 0.0045 mass % or more and 0.0150 mass % or less;Al: 0.10 mass % or less; andP: 0.025 mass % or less,and optionally at least one of Cr: 0.10 mass % or less and Mo: 0.10 mass % or less,with the remainder being Fe and inevitable impurities, {'br': None, '0.1≤[Ti]/[Si]≤3.0'}, 'wherein the following relationship is satisfiedwherein [Si] is the content of Si (mass %) based on the total mass of the wire and [Ti] is the content of Ti (mass %) based on the total mass of the wire.2. The wire for gas-shielded arc welding according to claim 1 , wherein the content of Si is 0.25 mass % or less.3. The wire for gas-shielded arc welding according to claim 1 , wherein the content of Ti is 0.12 mass % or more.4. The wire for gas-shielded arc welding according to claim 2 , wherein the content of Ti is 0.12 mass % or more.5. The wire for gas-shielded arc welding according to claim 1 , further comprising at least one of Cr: 0.10 mass % ...

BRAZED ELECTRODE FOR PLASMA CUTTING TORCH

A silver-copper cutting electrode assembly, and method of manufacture is provided with optimized attributes to allow for improved durability, integrity and manufacturability. An electrode has a silver tip portion which is brazed to a copper body portion where the silver portion and joint have a particular structural relationship. 1. A composite plasma cutting electrode , comprising:a body portion made from a first material having a wall portion defining a cavity and a distal end having an distal end face and a first shoulder engagement portion which extends upstream from said distal end face, where said first shoulder engagement portion comprises first and second surfaces; anda tip portion made from a second material, said tip portion having a further distal end face and a tip cavity in said further distal end face with an emissive insert disposed in said tip cavity, an upstream end face, and a second shoulder engagement portion extending downstream from said upstream end face, and having a first and second surface,wherein said upstream end face of said tip portion makes direct physical contact with said first surface of said first shoulder engagement portion;wherein said second surface of said first shoulder engagement portion is adjacent to said second surface of said second shoulder engagement portion such that a first gap exists between said respective second surfaces,wherein said first surface of said second shoulder engagement portion is adjacent to said distal end face of said body portion such that a second gap exists between said first surface of said second shoulder engagement portion and said distal end face of said body portion, andwherein each of said first and second gaps are filled with a brazing material which secures said body portion to said tip portion.2. The composite plasma cutting electrode of claim 1 , wherein said second gap is in the range of 0.001 to 0.006 in.3. The composite plasma cutting electrode of claim 2 , wherein said first gap is ...

BRAZED ELECTRODE FOR PLASMA CUTTING TORCH

A silver-copper cutting electrode assembly, and method of manufacture is provided with optimized attributes to allow for improved durability, integrity and manufacturability. An electrode has a silver tip portion which is brazed to a copper body portion where the silver portion and joint have a particular structural relationship. 1. A method of manufacturing a composite plasma cutting electrode , comprising:providing a body portion made from a first material having a wall portion defining a cavity and a distal end having an distal end face and a first shoulder engagement portion which extends upstream from said distal end face, where said first shoulder engagement portion comprises first and second surfaces;providing a tip portion made from a second material, said tip portion having a further distal end face and a tip cavity in said further distal end face with an emissive insert disposed in said tip cavity, an upstream end face, and a second shoulder engagement portion extending downstream from said upstream end face, and having a first and second surface,inserting said tip portion into said distal end of said body portion such that said upstream end face of said tip portion makes direct physical contact with said first surface of said first shoulder engagement portion, where said second surface of said first shoulder engagement portion is adjacent to said second surface of said second shoulder engagement portion such that a first gap exists between said respective second surfaces, and where said first surface of said second shoulder engagement portion is adjacent to said distal end face of said body portion such that a second gap exists between said first surface of said second shoulder engagement portion and said distal end face of said body portion; andbrazing said tip portion to said body portion to join said body portion and said tip portion using a brazing material, wherein each of said first and second gaps are filled with said brazing material.2. The method ...

COPPER PASTE FOR JOINING, METHOD FOR MANUFACTURING JOINED BODY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and flake-shaped micro copper particles having a maximum particle size of 1 μm to 20 μm, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 μm to 20 μm and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles. 1. Copper paste for joining , comprising:metal particles; anda dispersion medium,wherein the metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and flake-shaped micro copper particles having a maximum particle size of 1 μm to 20 μm, and an aspect ratio of 4 or greater, andthe amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 μm to 20 μm and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.2. The copper paste for joining according to claim 1 ,wherein the copper paste for joining is used without pressurization.3. The copper paste for joining according to claim 1 ,wherein the amount of the sub-micro copper particles contained is 20% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the flake-shaped micro copper particles, andthe amount of the flake-shaped micro copper particles contained is 1% by mass to 90% by mass on the basis of a total mass of the metal particles.4. The copper paste for joining according to claim 1 ,wherein the metal particles include at least one kind of metal particles selected from the group consisting of nickel, silver, gold, palladium, and platinum.5. A method for manufacturing ...

Solder compositions

A solder composition comprising a blend of a first powder component and a second powder component, wherein the first powder component is a first solder alloy and the second powder component is a second solder alloy or a metal.

WELDING METHOD FOR COPPER AND STEEL AND APPLICATION THEREOF

A welding method for copper and steel and application thereof is described herein. The welding method includes the following steps: butt connecting or sleeve connecting an end to be welded of a copper material with an end to be welded of a steel material; and welding and connecting the end to be welded of the copper material and the end to be welded of the steel material by a heating part of a heat supply device under the protection of a shielding gas, wherein the top end of the heating part is shifted towards the copper material, and the end to be welded of the copper material and the end to be welded of the steel material are simultaneously molten and further fuse mutually. 1. A welding method for copper and steel , comprising the following steps:butt connecting or sleeve connecting an end to be welded of a copper material with an end to be welded of a steel material; andwelding and connecting the end to be welded of the copper material and the end to be welded of the steel material by a heating part of a heat supply device under the protection of a shielding gas, wherein a top end of the heating part is shifted towards the copper material, and the end to be welded of the copper material and the end to be welded of the steel material are simultaneously molten and further fuse mutually.2. The welding method for copper and steel according to claim 1 , wherein the top end of the heating part is shifted towards the copper material claim 1 , a shift distance is 0.1 mm-1.5 mm claim 1 , when the end to be welded of the copper material and the end to be welded of the steel material are butt connected to form a butt connecting surface claim 1 , the shift distance is the distance from the top end of the heating part to the butt connecting surface claim 1 , and when the end to be welded of the copper material and the end to be welded of the steel material are sleeve connected claim 1 , the shift distance is the distance from the top end of the heating part to an end surface ...

FORMING A SOLDER JOINT BETWEEN METAL LAYERS

Forming a solder joint between metal layers by preparing a structure having solder material placed between two metal layers and heating the structure to grow an intermetallic compound in a space between the two metal layers. Growing the intermetallic compound includes setting a first surface, in contact with the solder material between the two metal layers, to a first temperature, thereby enabling growth of the intermetallic compound; setting a second surface, in contact with the solder material between the two metal layers, to a second temperature, wherein the second temperature is higher than the first temperature; and maintaining a temperature gradient (temperature/unit thickness) between the two metal layers at a predetermined value or higher until the intermetallic compound substantially fills the space between the two metal layers. 1. A method for forming a solder joint between two metal layers by growing an intermetallic compound in a space between the two metal layers , the method comprising:setting a first surface to a first temperature, the first surface being in contact with a solder material between the two metal layers,setting a second surface to a second temperature, the second surface being in contact with the solder material between the two metal layers, wherein the second temperature is higher than the first temperature; andmaintaining a temperature gradient between the two metal layers equal to or greater than a predetermined value until the intermetallic compound substantially fills the space between the two metal layers.2. The method according to claim 1 , wherein the predetermined value for the temperature gradient is 0.1° C./μm.3. The method according to claim 1 , wherein an average thickness of the intermetallic compound between the two metal layers is at least 10 μm.4. The method according to claim 1 , wherein the two metal layers include Cu or Ni claim 1 , and the solder material includes a Pb-free solder metal including Sn alone claim 1 , ...

Luminescent Braze Preforms

A braze preform includes a filler metal, a flux in communication with the filler metal, and a luminescent material covering at least a portion of the filler metal. The luminescent material is equal to or less than 0.15% total weight of the braze ring. Further, the luminescent material includes at least one of a luminescent ink, a solvent, and a binder. The solvent may be one of a bromide-based solvent or a non-chlorine-based solvent. The binder may be an acrylic resin. 1. A braze preform comprising:a filler metal;a luminescent material that covers at least a portion of the filler metal; andwherein the luminescent material is equal to or less than 0.15% total weight of the braze preform.2. The braze preform of wherein the luminescent material is burned off at or below the melting temperature of the filler metal.3. The braze preform of wherein the luminescent material is applied to the braze preform as a wet coating and then cured;wherein the wet coating of the luminescent material comprises at least one of luminescent ink, a solvent, and a binder.4. The braze preform of wherein the wet coating luminescent ink is less than 50% of the weight of the luminescent material; andwherein the solvent is greater than 50% of the weight of the luminescent material.5. The braze preform of wherein the binder is an acrylic resin.6. The braze preform of wherein the solvent is at least one of a bromide and a non-chlorine.7. The braze preform of wherein the luminescent ink is at least one of a solid and a liquid.8. The braze preform of wherein the luminescent material comprises a luminescent ink and a binder claim 1 , wherein the luminescent ink is less than 50% of the weight of the luminescent material.9. The braze preform of wherein the filler metal includes a flux core.10. The braze preform of wherein the filler metal includes a flux coating.11. The braze preform of wherein the luminescent material covers 90%±10% of the braze preform.12. A braze preform comprisinga filler metal;a ...

System and Method for Producing Chemicals at High Temperature

A system for producing chemicals, such as, ethylene or gasoline, at high temperature (above 1100 degrees C.) having a feedstock source. The system includes a chemical conversion portion connected with the feedstock source to receive feedstock and convert the feedstock to ethylene or gasoline. The conversion portion includes a coil array and a furnace that heats the feedstock to temperatures in excess of 1100° C. or 1200° C. or even 1250° C. or even 1300° C. or even 1400° C. A method for producing chemicals, such as ethylene or gasoline, at high temperature. 1. A method for producing ethylene or gasoline comprising the steps of:flowing feedstock from a feedstock source to a chemical conversion portion connected with the feedstock source to receive feedstock and convert the feedstock to ethylene or gasoline, the conversion portion including a coil array and a furnace that heats the feedstock to temperatures in excess of 1100° C., the coil array having a plurality of coils, each coil having a right top portion made of super alloy that connects with the source to receive feedstock, a right oxidation protected tungsten coupling that is attached outside the furnace to the right top portion and forms a helium gas tight seal with the right top portion, a right bottom portion made of silicon carbide that is attached outside the furnace to the right oxidation protected tungsten coupling and forms a helium gas tight seal with the right oxidation protected tungsten coupling, a base made of silicon carbide that is attached to the right bottom portion and forms a helium gas tight seal with the right bottom portion, a left bottom portion made of silicon carbide that is attached to the base and forms a helium gas tight seal with the base, a left oxidation protected tungsten coupling that is attached outside the furnace to the left bottom portion and forms a helium gas tight seal with the left bottom portion, and a left top portion made of super alloy that is attached to the left ...

ARC WELDING METHOD AND SOLID WIRE

An arc welding method includes performing welding by using a gas and a solid wire. The gas contains Ar. The solid wire includes a steel core wire and a copper plating film formed on a surface of the steel core wire, and the copper plating film has an average grain diameter of 600 nm or less. 1. An arc welding method , comprising:performing welding by using a gas and a solid wire,whereinthe gas contains Ar,the solid wire includes a steel core wire and a copper plating film formed on a surface of the steel core wire, andthe copper plating film has an average grain diameter of 600 nm or less.2. The arc welding method according to claim 1 , wherein the welding is performed while controlling repeated feed of the solid wire in a forward and backward direction of the solid wire.3. The arc welding method according to claim 1 , wherein the steel core wire is made of a mild steel.4. The arc welding method according to claim 1 , wherein the solid wire comprises claim 1 , in mass %:C: 0.15% or less;Si: 2.0% or less;Mn: 3.0% or less; andCu: 0.5% or less.5. The arc welding method according to claim 4 , wherein the solid wire further comprises claim 4 , in mass % claim 4 , at least one of:S: 0.30% or less;Al: 1.0% or less;Mo: 3.0% or less;Ti: 0.3% or less; andZr: 0.3% or less.6. The arc welding method according to claim 1 , wherein the average grain diameter of the copper plating film is 50 nm or more and 500 nm or less.7. A solid wire claim 1 , comprising:a steel core wire; anda copper plating film formed on a surface of the steel core wire,wherein the copper plating film has an average grain diameter of 600 nm or less.8. The solid wire according to claim 7 , wherein the steel core wire is made of a mild steel.9. The solid wire according to claim 7 , comprising claim 7 , in mass %:C: 0.15% or less;Si: 2.0% or less;Mn: 3.0% or less; andCu: 0.5% or less.10. The solid wire according to claim 9 , further comprising claim 9 , in mass % claim 9 , at least one of:S: 0.30% or less;Al: 1. ...

LEAD-FREE SOLDER FOIL FOR DIFFUSION SOLDERING AND METHOD FOR PRODUCING THE SAME

The invention relates to a lead-free solder foil for diffusion soldering and to the method for its production, with which method metallic structural parts and/or metallized/metal-coated structural parts, i.e. metallic surface layers of adjacent structural parts, may be bonded to one another. The task of the invention is to provide an economic and environmentally friendly lead-free solder foil that is not hazardous to health for diffusion soldering, with which the structural parts to be soldered can be bonded to one another in such a way, in a process temperature range typical of the soft soldering, i.e. at approximately 240° C. and in soldering times of shorter than 5 minutes, without a subsequent heat treatment and without the exertion of a pressing force during the soldering, that a continuous layer of a high-melting bonding zone is obtained in the form of an intermetallic phase having a remelting temperature of higher than 400° C. The lead-free solder foil () according to the invention for diffusion soldering contains a solder composite material (), which is produced by roll-plating and which is then constructed in such a way that, in a lead-free soft-solder environment of a soft-solder matrix (), compact particles () of a high-melting metal component () are completely surrounded by lead-free soft solder (), wherein the dispersedly distributed particles () of the high-melting metal component () have a thickness of 3 μm to 20 μm in the direction of the foil thickness, the spacings of the particles () relative to one another in the soft-solder matrix () are 1 μm to 10 μm, each of the particles of the high-melting metal component () is enveloped all around by a layer, 1 μm to 10 μm thick, of the lead-free soft solder (), and the solder foil () has, adjacent to the metallic surface layers () of the structural parts () to be joined, an outer cladding layer (), the layer thickness of which is 2 μm to 10 μm and which consists of soft solder (). 16-. (canceled)712232. A ...

BONDING MEMBER AND METHOD FOR MANUFACTURING BONDING MEMBER

A bonding member having a container between a first foil and a second foil. The container includes metal particles having a melting point higher than a melting point of the first foil and a melting point of the second foil, a film material in which the metal particles are dispersed, and intermetallic compounds formed by a reaction between the first foil or the second foil and the metal particles. The first foil and the metal particles are bonded with the intermetallic compound interposed therebetween, and the second foil and the metal particles are bonded with the intermetallic compound interposed therebetween. 1. A bonding member comprising:a first metal layer;a second metal layer; anda third layer provided between the first metal layer and the second metal layer,whereinthe third layer includes:a film material;first metal particles of having a melting point higher than a melting point of the first metal layer and a melting point of the second metal layer;a first intermetallic compound interposed between and formed from a first reaction between the first metal layer and the first metal particles of the third layer; anda second intermetallic compound interposed between and formed from a second reaction between the second metal layer and the first metal particles of the third layer,wherein the first metal layer and the first metal particles of the third layer are bonded with the first intermetallic compound, andthe second metal layer and the first metal particles of the third layer are bonded with the second intermetallic compound.2. The bonding member according to claim 1 , wherein the film material includes a flux.3. The bonding member according to claim 1 , wherein the first metal particles of the third layer have an average particle size (D90) of not less than 0.1 μm and not more than 45 μm.4. The bonding member according to claim 1 , whereinthe first metal layer is one of Sn pure metal and a Sn-based alloy;the second metal layer is one of Sn pure metal and a Sn- ...

BONDING MEMBER, METHOD FOR MANUFACTURING BONDING MEMBER, AND BONDING METHOD

A bonding member that includes a base material that has a spiral shape when viewing a cross section thereof orthogonal to a longitudinal direction thereof, and contains a low melting point metal; and a coating film in a gap between opposed surfaces of the base material when the base material is in the spiral shape. The coating film contains metal particles of a high melting point metal that forms an intermetallic compound having a melting point higher than that of the low melting point metal by reaction of the high melting point metal with a melt of the low melting point metal. The low melting point metal is, for example, Sn or a Sn alloy. The high melting point metal is, for example, a Cu—Ni alloy, a Cu—Mn alloy, a Cu—Cr alloy, or a Cu—Al alloy. 1. A bonding member comprising:a base material that has a spiral shape when viewing a cross section thereof orthogonal to a longitudinal direction thereof and contains a first melting point metal, the spiral shape forming a gap between opposed surfaces of the base material; anda film provided in the gap between the opposed surfaces of the base material, wherein the film contains a second melting point metal having a melting point higher than that of the first melting point metal, that forms an intermetallic compound having a melting point higher than the melting point of the first melting point metal by reaction of the second melting point metal with a melt of the first melting point metal.2. The bonding member according to claim 1 , whereinthe first melting point metal is Sn or a Sn alloy, andthe second melting point metal is a Cu—Ni alloy, a Cu—Ni—Co alloy, a Cu—Ni—Fe alloy, a Cu—Mn alloy, a Cu—Cr Alloy, or a Cu—Al alloy.3. The bonding member according to claim 1 , wherein the film contains a flux claim 1 , and the second melting point metal is in the form of metal particles.4. The bonding member according to claim 3 , wherein a weight ratio of the metal particles to the flux is in a range of 75:25 to 99.5:0.5.5. The ...

Method for Joining Ceramics to Ceramics or Ceramics to Metals, and Apparatus

An assembly including a ceramic body. The assembly comprises a tungsten coupling attached to the ceramic body with a first joint that forms a first helium tight seal between the ceramic body and the tungsten coupling and where the first helium tight seal maintains its integrity at a temperature over 400° C. The assembly includes a metal body attached to the tungsten coupling with a second joint that forms a second helium tight seal between the metal body and the tungsten coupling and where the second helium tight seal maintains its integrity at a temperature over 400° C. A method. A mixture. A coupling. 1. A method of forming an assembly comprising the steps of:forming a first joint between a ceramic body and a tungsten coupling to create a healing first helium tight seal between the tungsten coupling and the ceramic body where the first helium tight seal maintains its integrity at a temperature over 1100° C.; andforming a second joint between the tungsten coupling and a metal body to create a second helium tight seal between the tungsten coupling and the metal body where the second helium tight seal maintains its integrity at a temperature over 1100° C.2. An assembly comprising:a first ceramic body; anda second ceramic body attached to the first ceramic body with a first joint that forms a first helium tight seal between the first ceramic body and the second ceramic body and where the first helium tight seal maintains its integrity at a temperature over 1100° C.3. The assembly of wherein the first ceramic body and the second ceramic body are hollow and form a continuous channel extending through and inside the first ceramic body and the second ceramic body and the first helium tight seal.4. The assembly of wherein the first ceramic body is made of silicon carbide and the second ceramic body is made of either silicon carbide or 3:2 mullite.5. The assembly of wherein the first joint is made of between 30 wt % (weight percent or percent by mass) and 80 wt % claim 4 , ...

PREFORMED SOLDER AND SOLDER BONDED BODY FORMED BY USING SAID PREFORMED SOLDER

Provided is a preformed solder including a lead-free solder mainly composed of Sn and a metal particle with a melting point higher than a melting point of the lead-free solder. The metal particle is formed of a Cu-Ni alloy having a Ni content of 0.1 to 90% by mass, or a Cu-Co alloy having a Co content of 0.1 to 90% by mass, and the lead-free solder may contain Ni when the metal particle is formed of the Cu-Ni alloy, or contains Ni when the metal particle is formed of the Cu-Co alloy, and (Cu,Ni) 6Sn5 is formed on a surface of the metal particle. With this preformed solder, a bonded portion having heat resistance, thermal conductivity, and reliability higher than ever can be formed. 1. A preformed solder comprising a lead-free solder mainly composed of Sn , and a metal particle with a melting point higher than a melting point of the lead-free solder , whereinthe metal particle is formed of a Cu-Ni alloy having a Ni content of 0.1 to 90% by mass, or a Cu-Co alloy having a Co content of 0.1 to 90% by mass,the lead-free solder optionally contains Ni when the metal particle is formed of the Cu-Ni alloy, or contains Ni when the metal particle is formed of the Cu-Co alloy, and{'sub': 6', '5, '(Cu,Ni)Snis formed on a surface of the metal particle.'}2. A solder bonded body that is formed by using the preformed solder according to . The present invention relates to a preformed solder and a solder bonded body formed by using the preformed solder.In the past, for example, when an electronic part such as a power conversion element is fixed to a copper substrate, the method is sometimes employed in which a solder paste or a solder sheet is disposed in a necessary position followed by soldering it by heating with a reflow furnace or the like. In the soldering method using the reflow method like this, the solder that is melted by heating is pushed out from between the members to be bonded due to the own weight of the electronic part or the like, thereby sometimes resulting in a ...

BONDING WIRE FOR SEMICONDUCTOR DEVICE

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6: 1. A bonding wire for a semiconductor device , the bonding wire comprising:a Cu alloy core material; anda Pd coating layer formed on a surface of the Cu alloy core material, whereinthe bonding wire contains an element that provides bonding reliability in a high-temperature environment, and {'br': None, 'Strength ratio=ultimate strength/0.2% offset yield strength.\u2003\u2003(1)'}, 'a strength ratio defined by the following Equation (1) is 1.1 to 1.62. The bonding wire for a semiconductor device according to claim 1 , wherein a thickness of the Pd coating layer is 0.015 to 0.150 μm.3. The bonding wire for a semiconductor device according to claim 1 , further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.4. The bonding wire for a semiconductor device according to claim 3 , wherein a thickness of the alloy skin layer containing Au and Pd is 0.050 μm or less.5. The bonding wire for a semiconductor device according to claim 1 , whereinthe bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir and Pt, anda concentration of the at least one element in total is 0.011 to 2% by mass relative to the entire wire.6. The bonding wire for a semiconductor device according to claim 1 , whereinthe bonding wire contains one or more elements selected from Ga and Ge, anda concentration of the elements in total is 0.011 to 1.5% by mass relative to the entire wire.7. The bonding wire for a semiconductor device according to claim 1 , whereinthe bonding wire contains at least one or more elements selected from As, Te, Sn, Sb, Bi and Se,a concentration of the elements in total ...

Nano copper paste and film for sintered die attach and similar applications

A sintering powder comprising copper particles, wherein: the particles are at least partially coated with a capping agent, and the particles exhibit a D10 of greater than or equal to 100 nm and a D90 of less than or equal to 2000 nm.

COPPER FINE PARTICLE SINTERED BODY

An object to be achieved by the present invention is to provide a bonding element in which copper fine particles are used as a bonding element of a semiconductor device component and a crack, peeling, or the like is not caused in a semiconductor device during an operation under a high-temperature condition of 200° C. or higher. The object is achieved by providing a copper fine particle sintered body for bonding a semiconductor device component, in which when a Vickers hardness of the copper fine particle sintered body at 150° C. is set as Hvb and a Vickers hardness of the same copper fine particle sintered body at 25° C. is set as Hva, a value of (Hvb/Hva)×100 (%) is 5% or more and 20% or less. 1. A sintered body for bonding a semiconductor device component , which is obtained by sintering a copper fine particle composited with an organic compound containing polyethylene oxide having 8 to 200 carbon atoms ,wherein when a Vickers hardness of the sintered body at 150° C. is set as Hvb and a Vickers hardness of the same sintered body at 25° C. is set as Hva, a value of (Hvb/Hva)×100 (%) is 5% or more and 20% or less.2. A sintered body for bonding a semiconductor device component , which is obtained by sintering a copper fine particle composited with an organic compound containing polyethylene oxide having 8 to 200 carbon atoms ,wherein when a Vickers hardness of the sintered body at 150° C. is set as Hvb and a Vickers hardness of the same sintered body at 25° C. is set as Hva, a value of (Hvb/Hva)×100 (%) is 7% or more and 10% or less. The present invention relates to a copper fine particle sintered body which can be used as a bonding element for bonding a semiconductor device component.From the viewpoint of environmental protection, regulation in use of harmful substances is widely imposed in the industry, but particularly for a mounting material, causing a solder material to be lead-free has been strongly promoted based on enforcement of the RoHS directive of the ...

BONDING WIRE FOR SEMICONDUCTOR DEVICE

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less. 1. A bonding wire for a semiconductor device , the bonding wire comprising:a Cu alloy core material; anda Pd coating layer formed on a surface of the Cu alloy core material, whereinwhen measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30% or more among crystal orientations in the wire longitudinal direction,an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 μm or more and 1.5 μm or less, andthe bonding wire contains one or more elements selected from Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn, Al, In, Sn, P, As, Sb, Bi, Se and Te.2. The bonding wire for a semiconductor device according to claim 1 , wherein a strength ratio defined by the following Equation (1) is 1.1 or more and 1.6 or less:{'br': None, 'Strength ratio=ultimate strength/0.2% offset yield strength.\u2003\u2003(1)'}3. The bonding wire for a semiconductor device according to claim 1 ...

Flux-cored wire, manufacturing method of welded joint, and welded joint

A flux-cored wire according to an aspect of the present invention includes: a steel sheath; and a flux filling the inside of the steel sheath, in which the flux contains 0.11% or more in total of a fluoride in terms of F-equivalent value, 4.30% to 7.50% of a Ti oxide in terms of TiO 2 equivalent, 0.30% to 2.40% in total of an oxide in terms of mass %, and 0% to 0.60% in total of a carbonate in terms of mass %, the amount of a Ca oxide in terms of CaO is less than 0.20% in terms of mass %, the amount of CaF 2 is less than 0.50%, a chemical composition of the flux-cored wire is within a predetermined range, a Z value is 2.00% or less, a V value is 5.0 to 27.0, and Ceq is 0.30% to 1.00% or less.

USE OF AN ALLOY AS A BRAZING ALLOY FOR AN ELECTRIC SWITCH BRAZE JOINT, AN ELECTRIC SWITCH BRAZE JOINT, AN ELECTRIC SWITCH AND A METHOD OF PRODUCING AN ELECTRIC SWITCH BRAZE JOINT

Embodiments of the present disclosure relate to an alloy as a brazing alloy for an electric switch braze joint, an electric switch braze joint, an electric switch and a method of producing an electric switch braze joint. The alloy composition of said the alloy consists of at least one element selected from each of group I and group II listed below, and a balance of impurities, Ag, and at least one of Cu, and Zn. Group I encompasses Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 0.5 to 45.0 wt. %. Group II encompasses Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt. %. 1. A brazing alloy for an electric switch braze joint , the alloy composition consisting of:at least one element selected from each of group I and group II listed below,the balance being AG, optionally at least one of Cu and Zn, and impurities;group I: Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 0.5 to 45.0 wt. %; andgroup II: Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt. %.2. The alloy according to claim 1 , wherein the balance is Ag and Cu optionally at least one of P and Zn claim 1 , and impurities;group I: Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 0.5 to 45.0 wt. %; andgroup II: Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt. %.3. The alloy according to claim 2 , whereinthe balance is Cu—Ag—P, optionally Zn, and impurities; andgroup II: Bi, Mo, Te, W, and oxides thereof, oxides of Cu and Zn in a total amount of 0.1 to 15.0 wt %.4. The alloy according to claim 1 , whereinthe solidus temperature is at least 600° C. and a liquidus temperature is less than 950° C.5. The alloy according to claim 1 , wherein the brazing alloy can be used without flux.6. The alloy according to claim 1 , whereingroup I consists of Cd, Mn, Ni, P, Sb, Si, Sn, Ti, and oxides thereof in a total amount of 5.0 to 20.0 ...

METAL PASTE FOR JOINTS, ASSEMBLY, PRODUCTION METHOD FOR ASSEMBLY, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 ηm, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles. 1. A metal paste for joints , comprising:metal particles; anda monovalent carboxylic acid having 1 to 9 carbon atoms,wherein the metal particles comprise sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μm, anda content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.2. The metal paste for joints according to claim 1 , further comprising:a carboxylic acid having carbon atoms of greater than or equal to 10,wherein a content of the carboxylic acid having carbon atoms of greater than or equal to 10 is 0.07 part by mass to 2.10 parts by mass with respect to 100 parts by mass of the metal particles.3. The metal paste for joints according to claim 1 ,wherein the metal particles further comprise flake-shaped micro copper particles having a maximum diameter of 2 μm to 50 μm and an aspect ratio of greater than or equal to 3.0,a content of the sub-micro copper particles is 30 mass % to 90 mass % on the basis of a total mass of the metal particles, anda content of the micro copper particles is 10 mass % to 70 mass % on the basis of the total mass of the metal particles.4. The metal paste for joints according to claim 1 ,wherein the metal particles further comprise at least one type of metal particles selected from the group consisting of zinc and silver at a content of 0.01 mass % to 10 mass % on the basis of the total mass of the metal particles.5. The metal paste for joints according to claim 1 ,wherein the ...