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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 1757. Отображено 100.
02-08-2012 дата публикации

Wafer dicing press and method and semiconductor wafer dicing system including the same

Номер: US20120196426A1
Автор: Won-Chul Lim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

In a wafer dicing press for reducing time and cost for wafer dicing and for evenly applying a dicing pressure to a whole wafer, a wafer dicing press includes a support unit supporting a first side of a wafer; and a pressurization device applying a pressure, by dispersing the pressure, to a second side of the wafer so that a laser-scribed layer of the wafer operates as a division starting point. Accordingly, the wafer dicing press reduces laser radiation and pressure-application times for dividing a wafer into semiconductor devices. This increased efficiency is achieved without increasing the likelihood of damaging the wafer.

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Номер записи: 1
20-12-2012 дата публикации

Method for cutting glass sheet

Номер: US20120318838A1
Автор: Takayoshi Saitoh
Принадлежит: Nippon Electric Glass Co Ltd

Provided is a method for cutting a glass sheet whereby even a thin glass sheet having a thickness of 1 mm or less can be suitably cut. A nick ( 20 a ) is formed on a section of a planned cutting line (L) of a glass sheet ( 20 ). The glass sheet ( 20 ) is placed on a surface ( 10 a ) of a jig ( 10 ) in which an uneven portion ( 10 b ) having a shape corresponding to the planned cutting line (L) is formed. The glass sheet ( 20 ) is cut by deforming a portion thereof located above the uneven portion ( 10 b ) and developing a crack originating from the nick ( 20 a ).

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Номер записи: 2
18-04-2013 дата публикации

Transparent material processing with an ultrashort pulse laser

Номер: US20130095260A1
Автор: Alan Y. Arai, Fumiyo Yoshino, James Bovatsek
Принадлежит: IMRA America Inc

Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials.

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Номер записи: 3
25-07-2013 дата публикации

Processing method for wafer

Номер: US20130189806A1
Автор: Hitoshi Hoshino
Принадлежит: Disco Corp

A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.

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Номер записи: 4
07-11-2013 дата публикации

Mechanical scoring and separation of strengthened glass

Номер: US20130292442A1
Автор: II Michael Albert Joseph, James William Brown, John Frederick Bayne, Siva Venkatachalam, Sujanto Widjaja
Принадлежит: Corning Inc

A strengthened glass sheet is separated into undamaged sheet segments by mechanically scribing one or more vent lines of controlled depth into the sheet surface, the depths of the scribed lines being insufficient to effect sheet separation, and then applying a uniform bending moment across the vent lines to effect separation into multiple sheet segments, the vent lines being scribed from crack initiation sites comprising surface indentations formed proximate to the edges of the glass sheet.

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Номер записи: 5
10-04-2014 дата публикации

Laser processing method and device

Номер: US20140097163A1
Автор: Fumitsugu Fukuyo, Kazuhiro Atsumi, Kenshi Fukumitsu, Koji Kuno, Masayoshi Kusunoki, Tatsuya Suzuki
Принадлежит: Hamamatsu Photonics KK

A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S 11 and S 12 ) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S 13 and S 14 ) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

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Номер записи: 6
03-02-2022 дата публикации

Si SUBSTRATE MANUFACTURING METHOD

Номер: US20220032503A1
Автор: Hirata Kazuya, Tabata Shin
Принадлежит:

An Si substrate manufacturing method includes a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to Si to a depth, equivalent to a thickness of an Si substrate to be manufactured, from a flat surface of an Si ingot and irradiating the Si ingot with the laser beam while relatively moving the focal point and the Si ingot in a direction < parallel to a cross line at which a crystal plane { and a crystal plane { intersect or a direction [ orthogonal to the cross line, and an indexing feed step of executing indexing feed of the focal point and the Si ingot relatively in a direction orthogonal to a direction in which the separation band is formed. 1100. A silicon substrate manufacturing method for manufacturing a silicon substrate from a silicon ingot in which a crystal plane () is made to be a flat surface , the silicon substrate manufacturing method comprising:{'b': 110', '100', '111', '110, 'a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to silicon to a depth equivalent to a thickness of the silicon substrate to be manufactured from the flat surface and irradiating the silicon ingot with the laser beam while relatively moving the focal point and the silicon ingot in a direction <> parallel to a cross line at which a crystal plane {} and a crystal plane {} intersect or a direction [] orthogonal to the cross line;'}an indexing feed step of executing indexing feed of the focal point and the silicon ingot relatively in a direction orthogonal to a direction in which the separation band is formed; and{'b': '100', 'a wafer manufacturing step of repeatedly executing the separation band forming step and the indexing feed step to form a separation layer parallel to the crystal plane () as a whole inside the silicon ingot and separating the silicon ...

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Номер записи: 7
19-01-2017 дата публикации

POLYCRYSTALLINE SiC WAFER PRODUCING METHOD

Номер: US20170014944A1
Автор: Hirata Kazuya, Nishino Yoko
Принадлежит:

There is provided a polycrystalline SiC wafer producing method. In this method, in a modified layer forming step for forming an interface for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot, the formed interface is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of a pulse laser beam and then polycrystalline SiC splits into amorphous silicon and amorphous carbon at a position at which the power density is constant with absorption of the continuously-emitted pulse laser beam by amorphous carbon formed in advance. 1. A polycrystalline SiC wafer producing method for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot , the method comprising:a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the polycrystalline SiC ingot at a predetermined position from an irradiated surface of the polycrystalline SiC ingot and irradiating the polycrystalline SiC ingot with the pulse laser beam to form modified layers at a position at which an interface between the polycrystalline SiC wafer and the polycrystalline SiC ingot is to be formed; anda polycrystalline SiC wafer separating step of giving an external force to an upper side relative to the interface formed by the modified layer forming step and separating the polycrystalline SiC wafer from the interface,wherein the interface formed in the modified layer forming step is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of the pulse laser beam, the pulse laser beam emitted next is absorbed by the amorphous carbon formed by the pulse laser beam emitted in advance ...

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Номер записи: 8
19-01-2017 дата публикации

Wafer producing method

Номер: US20170015017A1
Автор: Kazuya Hirata
Принадлежит: Disco Corp

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The depth of the focal point of a laser beam is gradually changed from a shallow position not reaching the depth corresponding to the desired thickness of the wafer to a deep position corresponding to the desired thickness of the wafer in such a manner that a parabola is described by the path of the focal point. When the spot area of the laser beam on the upper surface of the ingot becomes a predetermined maximum value, the deep position of the focal point is maintained.

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Номер записи: 9
16-01-2020 дата публикации

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

Номер: US20200021083A1
Автор: Daisuke Ikeda, Gen Shimizu, Hideo Kitagawa, Katsuya Samonji, Masayuki Ono, Osamu Tomita, Satoko Kawasaki, Toru Takayama
Принадлежит: Panasonic Intellectual Property Management Co Ltd

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

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Номер записи: 10
28-01-2021 дата публикации

Incident radiation induced subsurface damage for controlled crack propagation in material cleavage

Номер: US20210023741A1
Автор: Andrei Teodor IANCU, Charles William Rudy
Принадлежит: Halo Industries Inc

A cleaving system employs a shaper, a positioner, an internal preparation system, an external preparation system, a cleaver, and a cropper to cleave a workpiece into cleaved pieces. The shaper shapes a workpiece into a defined geometric shape. The positioner then positions the workpiece such that the internal preparation system can generate a separation layer at the cleaving plane. The internal preparation system focuses a laser beam internal to the workpiece at a focal point and scans the focal point across the cleaving plane to create the separation layer. The external preparation system scores the external surface of the workpiece at a location coincident with the separation layer. The cleaver cleaves the workpiece by propagating the crack on the external surface along the separation layer. The cropper shapes the cleaved piece into a geometric shape as needed.

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Номер записи: 11
29-01-2015 дата публикации

SEMICONDUCTOR DIE SINGULATION METHODS

Номер: US20150027290A1
Автор: Grivna Gordon M., JR. James M., Parsey
Принадлежит: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. A cutting tool comprising:a central support section having a major axis;a cutting tip;a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;a depth stop spaced a first distance from the cutting tip toward the central support section wherein, a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop; andan accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.12. The cutting tool of wherein the accumulation region extends from the distal end of the cutting surface away from the cutting tip.13. The cutting tool of wherein the depth stop has a first portion that is configured to engage with a surface of a conductor on a semiconductor wafer to limit a depth of penetration of the cutting tip into the conductor.14. The cutting tool of wherein the central support section is rotatingly coupled to the cutting surface.15. The cutting tool of wherein the cutting surface angularly extends from the cutting tip to the central support section.16. The cutting tool of wherein the accumulation region is formed as a recess disposed within the central support section claim 11 , the accumulation region positioned adjacent to the distal end of the cutting ...

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Номер записи: 12
25-01-2018 дата публикации

WAFER GROUP, WAFER MANUFACTURING DEVICE, AND WAFER MANUFACTURING METHOD

Номер: US20180026092A1
Автор: Ishii Makoto, SHOJI Shinya, SUGIURA Junji, UMETSU Kazuyuki
Принадлежит: DOWA ELECTRONICS MATERIALS CO., LTD.

A wafer group facilitates securing uniformity of products manufactured from the wafer group whose composition varies among wafers. A technique excludes uncertain factors in forming OF, forming OF with extremely high probability and extremely high accuracy, the wafer group being constituted by a plurality of wafers obtained from the same ingot, with all wafers having an orientation flat (OF), wherein the wafer group is constituted by 70 or more wafers, and in the OF orientation accuracy of the wafer group represented by an angle, the OF orientation accuracy in each wafer is within ±0.010°. 1. A wafer group constituted by a plurality of wafers obtained from the same ingot , with all wafers having an orientation flat (OF) , wherein the wafer group is constituted by 70 or more wafers , and in the OF orientation accuracy of the wafer group represented by an angle , the OF orientation accuracy in each wafer is within ±0.010°.2. The wafer group according to claim 1 , wherein at least one of the following conditions are satisfied claim 1 ,(Condition 1) A value obtained by subtracting a minimum value from a maximum value of the OF orientation accuracy in each wafer, is 0.010° or less.(Condition 2) A value obtained by subtracting an average value of the OF orientation accuracy of the wafer group from the maximum value of the OF orientation accuracy in each wafer, is 0.006° or less.(Condition 3) A value obtained by subtracting the minimum value of the OF orientation accuracy in each wafer from the average value of the OF orientation accuracy of the wafer group, is 0.006° or less.(Condition 4) A standard deviation of the OF orientation accuracy of the wafer group, is 0.0015 or less.3. The wafer group according claim 1 ,wherein for each wafer constituting the wafer group, a plot is formed in which the number of each wafer sequentially given from the side close to one end of the ingot is taken as X axis, and a concentration of a predetermined element in each wafer is taken as Y ...

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Номер записи: 13
24-02-2022 дата публикации

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE

Номер: US20220055156A1
Автор: Amano Hiroshi, IGASAKI Yasunori, Kawaguchi Daisuke, SASAOKA Chiaki, TANAKA Atsushi, WANI Yotaro, YUI Toshiki
Принадлежит:

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step. 1: A laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object , the method comprising:a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface; anda second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.2: The laser processing method according to claim 1 , wherein in the first step claim 1 , the first modified spots are formed so that a plurality of fractures respectively extending from the plurality of first modified spots are not connected to each other.3: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are formed so that a plurality of fractures respectively extending from the plurality of second modified spots are connected to each other.4: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are ...

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Номер записи: 14
15-02-2018 дата публикации

SiC WAFER PRODUCING METHOD

Номер: US20180043468A1
Автор: Hirata Kazuya
Принадлежит:

An SiC wafer is produced from a single crystal SiC ingot by a method that includes forming a plurality of breakable layers constituting a separation surface in the SiC ingot, each breakable layer including a modified layer and cracks extending from the modified layer along a c-plane, and separating part of the SiC ingot along the separation surface as an interface to thereby produce the SiC wafer. In forming the separation surface, the energy density of a pulsed laser beam is set to an energy density not causing the formation of an upper damage layer above the breakable layer previously formed due to the reflection of the pulsed laser beam from the breakable layer and not causing the formation of a lower damage layer below the breakable layer previously formed due to the transmission of the pulsed laser beam through the breakable layer. 1. An SiC wafer producing method for producing an SiC wafer from a single crystal SiC ingot having a first surface , a second surface opposite to said first surface , a c-axis extending from said first surface to said second surface , and a c-plane perpendicular to said c-axis , said c-axis being inclined by an off angle with respect to a normal to said first surface , said off angle being formed between said c-plane and said first surface , said SiC wafer producing method comprising:a breakable layer forming step of setting a focal point of a pulsed laser beam having a transmission wavelength to SiC inside said SiC ingot at a predetermined depth from said first surface, said predetermined depth corresponding to the thickness of said SiC wafer to be produced, and next applying said pulsed laser beam to said SiC ingot as relatively moving said SiC ingot and said focal point in a first direction perpendicular to a second direction where said off angle is formed, thereby forming a breakable layer inside said SiC ingot at said predetermined depth, said breakable layer including a modified layer extending in said first direction and ...

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Номер записи: 15
18-02-2016 дата публикации

Design method of tip shape of cutting member, semiconductor chip manufacturing method, circuit board, and electronic apparatus

Номер: US20160049333A1
Автор: Hiroaki Tezuka, Kenichi Ono, Kenji Yamazaki, Michiaki Murata, Shuichi Yamada, Takeshi MINAMIRU, Tsutomu Otsuka
Принадлежит: Fuji Xerox Co Ltd

A design method includes a process of preparing plural cutting members having different degrees of taper in a tip portion thereof, a process of preparing plural grooves on a front surface side having the same shape, a process of confirming a breakage status when a groove on a rear surface side is formed by the plural cutting members, and a process of selecting, when it is confirmed that both of a cutting member that causes breakage and a cutting member that does not cause the breakage are included, the degree of taper of the cutting member that does not cause the breakage as a tip shape of a cutting member to be used in a mass production process.

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Номер записи: 16
13-02-2020 дата публикации

Method for Modifying Substrates Based on Crystal Lattice Dislocation Density

Номер: US20200051831A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf, Swoboda Marko, Ullrich Albrecht
Принадлежит:

A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane. 1. A method , comprising:providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines;generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; andseparating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.2. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:using a same polarization to form a group of modifications oriented in a same direction.3. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:using a first polarization to form a first group of modifications oriented in a first direction; andusing a second polarization different than the first polarization to form a second group of modifications oriented in a second direction different than the first direction.4. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:adjusting a polarization used to form a group of modifications so that an orientation of the modifications in the group deviate from one another.5. The method of claim 1 , ...

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Номер записи: 17
05-03-2015 дата публикации

Method of Controlled Crack Propagation for Material Cleavage using Electromagnetic Forces

Номер: US20150060509A1
Автор: Iancu Andrei T., Prinz Friedrich B.
Принадлежит:

To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material. 1. A method of cleaving substrate material , comprising:a. forming an initial crack in a bulk substrate material, wherein said crack is aligned along a cleaving plane of said bulk substrate material;b. aligning said cleaving plane between two parallel electrodes in a controlled environment, wherein said parallel electrodes comprise a top electrode and a bottom electrode, wherein said cleaving plane is parallel with said two parallel electrodes, wherein a bottom portion of said bulk substrate material is physically and electrically connected to said bottom electrode; andc. applying a voltage across said two parallel electrodes, wherein said voltage is at least 50 kV, wherein said voltage establishes a uniform electromagnetic force on said top surface of said bulk substrate material, wherein said electromagnetic force is capable of inducing crack propagation along said cleaving plane and separating a cleaved substrate material from said bulk substrate material.2. The method according to claim 1 , wherein forming said initial crack ...

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Номер записи: 18
01-03-2018 дата публикации

METHOD OF PRODUCING SiC WAFER

Номер: US20180056440A1
Автор: Hirata Kazuya, YAMAMOTO RYOHEI
Принадлежит:

An SiC wafer is generated from an SiC ingot by a peel-off plane generating step for generating a peel-off plane by forming a separation layer made up of a modified layer, and cracks extending from the modified layer along a c-plane, a plurality of times by indexing-feeding a focused point of a pulsed laser beam and the SiC ingot relative to each other in a direction in which an off-angle is formed, thereby forming a plurality of separation layers to generate the peel-off plane. The peel-off plane generating step includes relatively moving the focused point from an end to an opposite end of the SiC ingot in a forward stroke and relatively moving the focused point from the opposite end to the end of the SiC ingot in a backward stroke to trace back the separation layer that has already been formed in the forward stroke. 1a peel-off plane forming step of forming a peel-off plane in the SiC ingot by performing a separation layer forming step by positioning a focused point of a pulsed laser beam having a wavelength with which SiC is transmittable in the SiC ingot at a depth, from the first surface, corresponding to the thickness of a wafer to be produced from the SiC ingot, and applying a pulsed laser beam to the SiC ingot while the SiC ingot and the focused point are relatively processing-fed in a first direction perpendicular to a second direction in which the off-angle is formed, thereby forming a separation layer made up of a modified layer where SiC is separated into Si and C by a pulsed laser beam applied thereto and a pulsed laser beam applied next thereto is absorbed by the previously formed C, separating SiC into Si and C in a chain reaction, and cracks extending from the modified layer along the c-plane, the separation layer forming step being performed a plurality of times by indexing-feeding the SiC ingot and the focused point relatively to each other in the second direction in which the off-angle is formed, thereby forming a plurality of separation layers to ...

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Номер записи: 19
21-02-2019 дата публикации

DEVICE AND METHOD FOR CLEAVING A SUBSTRATE

Номер: US20190054658A1
Автор: Moyal Gal
Принадлежит:

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis perpendicular to the top surface of the sample; providing a breaking pin located under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, a cleaving bar for applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin. Further, the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface. 1. A device for cleaving a sample comprising:a stage horizontally disposed on a base, the stage having a substantially flat top for positioning a sample;a Newport stage disposed on the base and having a top portion operable by a micrometer adjustment mechanism;a block coupled to the top portion;an indenter coupled to the block and movable along an edge of the stage by operation of the micrometer adjustment mechanism, in which a lower upward facing breaking pin is disposed behind the indenter; anda vertically operable cleaving bar slidabaly coupled to the block and including two downward facing breaker pins oriented behind the indenter, whereby when the vertically operable cleaving bar is lowered the upward facing breaker pin is positioned between the two downward facing breaker pins.2. The device for cleaving a sample of further comprising:a guide slot disposed in a top of the stage;a guide slidabally coupled to the guide slot; anda guide lock thredabaly coupled to the guide.3. The device for cleaving a sample of in which the vertically operable cleaving bar is operable along a vertical axis from a first ...

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Номер записи: 20
03-03-2016 дата публикации

METHOD AND APPARATUS FOR THINNING WAFER

Номер: US20160064229A1
Автор: KIM Sung Wook
Принадлежит: HANWHA TECHWIN CO., LTD.

A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer. 1. A method for thinning a wafer , comprising:irradiating a line beam focused at a specific depth of a wafer;scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; andcleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.2. The method of claim 1 , wherein the irradiating of the line beam includes:irradiating a laser beam; andshaping the laser beam to generate the line beam.3. The method of claim 1 , wherein the forming of the interface includes:adjusting at least one of a scan rate of the line beam or an intensity of the line beam; andforming grid pattern lines at the specific depth of the wafer.4. The method of claim 1 , further comprising: forming a circuit pattern on the dummy pattern and recycling the dummy pattern.5. An apparatus for thinning a wafer claim 1 , comprising:a wafer support unit supporting and fixing one surface of a wafer thereby;a laser light source unit irradiating a laser beam;a line beam-optical unit generating a line beam by shaping the laser beam, and irradiating the line beam to a specific depth of the wafer in accordance with a size of the wafer;a gantry unit transferring at least one of the line beam-optical unit or the wafer support unit in an XY direction in order to scan the wafer using the line beam;a wafer fixing unit fixing the other surface of the wafer; anda cleaving and transferring unit transferring the wafer support unit and the wafer fixing unit in opposite directions and cleaving the wafer into a pattern wafer ...

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Номер записи: 21
08-03-2018 дата публикации

BRITTLE OBJECT CUTTING APPARATUS AND CUTTING METHOD THEREOF

Номер: US20180065210A1
Автор: HSU CHIH-PENG, HSU Wei-Nung, KONDRATENKO Vladimir, LU Hung-Tu, NAUMOV Alexander
Принадлежит:

A brittle object cutting apparatus and the method thereof are disclosed. Wherein, the brittle object cutting apparatus comprises a first heating laser unit, a second heating laser unit, a scribing laser unit, two cooling units and a processing module. A heating laser from the heating laser units respectively located on opposite sides of a scribing laser from the scribing laser unit, and a coolant of the cooling unit followed behind the heating laser. In the moving process of the brittle object, the processing module controls the scribing laser for a scribing operation, and controls one of the heating lasers and the coolant form one of the cooling units to heat and cool the brittle object. As a result, the machining time of dicing the brittle objects may be effectively reduced. 1. A brittle object cutting apparatus for cutting a brittle object , comprising:a scribing laser unit, configured to emit a scribing laser to scribe the brittle object by a first laser focusing spot and a second laser focusing spot, provided by the focusing optics of the optical path of the scribing laser onto the surface of the brittle object,a first heating laser unit, configured to emit a first heating laser to heat the brittle object by the first laser focusing spot, provided by the focusing optics of the optical path of the first heating laser onto the surface of the brittle object directly behind or on the certain distance from the first laser focusing spot;a second heating laser unit, configured to emit a second heating laser to heat the brittle object by the second laser focusing spot, provided by the focusing optics of the optical path of a second heating laser onto the surface of the brittle object directly behind or on the certain distance from the second laser focusing spot, wherein the first heating laser and the second heating laser are respectively located on opposite sides of the scribing laser;a first cooling unit, configured to provide a first coolant spot to cool the brittle ...

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Номер записи: 22
28-02-2019 дата публикации

CUTTING APPARATUS AND GROOVE DETECTING METHOD

Номер: US20190067108A1
Автор: HANAJIMA Satoshi, Tanaka Makoto, YASUDA Shinya, YUZAWA Harunobu
Принадлежит:

A cutting apparatus includes a cutting unit configured to cut a workpiece held on a chuck table, and a groove detecting unit including a CCD imaging element photographing the workpiece held on the chuck table. The groove detecting unit photographs, by the CCD imaging element, a laser-processed groove and a cut groove illuminated by an oblique illumination set such that a light amount of light in a direction parallel with an extending direction of the laser-processed groove as viewed in plan is higher than a light amount of light in a direction orthogonal to the extending direction of the laser-processed groove. 1. A cutting apparatus for forming , along a laser-processed groove formed in a top surface of a workpiece by a laser beam irradiating the workpiece , a cut groove in a position overlapping the laser-processed groove , the cutting apparatus comprising:a cutting unit configured to cut the workpiece held on a chuck table by a cutting blade mounted on a spindle; anda groove detecting unit including a camera photographing the workpiece held on the chuck table;the groove detecting unit photographing, by the camera, the laser-processed groove and the cut groove formed so as to overlap the laser-processed groove, the laser-processed groove and the cut groove being illuminated by an oblique illumination set such that a light amount of light in a direction parallel with an extending direction of the laser-processed groove as viewed in plan is higher than a light amount of light in a direction orthogonal to the extending direction of the laser-processed groove, and detecting, from a photographed image, the laser-processed groove displayed brightly with the light diffusely reflected by projections and depressions of a groove bottom of the laser-processed groove as well as the cut groove displayed more darkly than the laser-processed groove with the light regularly reflected by a groove bottom of the cut groove.2. The cutting apparatus according to claim 1 , whereinthe ...

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Номер записи: 23
08-03-2018 дата публикации

Laser processing method and laser processing apparatus

Номер: US20180068897A1
Автор: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Toshimitsu Wakuda
Принадлежит: Hamamatsu Photonics KK

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein at pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

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Номер записи: 24
05-03-2020 дата публикации

SiC SUBSTRATE PROCESSING METHOD

Номер: US20200075414A1
Автор: Kazuma Sekiya
Принадлежит: Disco Corp

An SiC substrate processing method for producing an SiC substrate from an SiC ingot. The SiC substrate processing method includes a separation layer forming step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot and next applying the laser beam LB to the SiC ingot to thereby form a separation layer for separating the SiC substrate from the SiC ingot, a substrate attaching step of attaching a substrate to the upper surface of the SiC ingot, and a separating step of applying an external force to the separation layer to thereby separate the SiC substrate with the substrate from the SiC ingot along the separation layer.

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Номер записи: 25
31-03-2016 дата публикации

Device and Method for Cleaving a Crystalline Sample

Номер: US20160089813A1
Автор: BOGUSLAVSKY Dimitry, KOVLER Mark
Принадлежит: IB Labs, Inc.

A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface. 1. A device for cleaving a crystalline sample , comprising:upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment or force on the crystalline sample;a first support element operably connected to a first actuator configured to bring the first support element into contact with a first side surface of the crystalline sample; anda cleaving element operably connected to a second actuator configured to cause the cleaving element to apply a force to a second side surface of the crystalline sample opposite to the first side surface while the bending moment or force is applied on the crystalline element.2. The device according to claim 1 , wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample.3. The device according to claim 1 , wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.4. The device according to claim 1 , wherein the upper and lower bending elements comprise a pair of upper bending elements and a lower bending element.5. The device according to claim 5 , wherein a trajectory of the lower bending ...

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Номер записи: 26
30-03-2017 дата публикации

DEVICE AND METHOD FOR CLEAVING

Номер: US20170087744A1
Автор: Moyal Gal
Принадлежит:

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis arranging perpendicularly to the top surface of the sample; providing a breaking pin and arranging the breaking pin under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin, further the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface. 1. A method of cleaving a sample , the method of cleaving comprising:creating an indentation on the top surface of the sample by extending an indenter arranged on a vertical axis toward the top surface of the sample whereby a diamond tip of the indenter causes a defect in the sample and 10 retracting the indenter along the vertical axis after the indentation is made on the sample;adjusting a depth of the indenter along the vertical axis to provide a user variable downward force of the tip on the sample and further adjusting the indenter in the horizontally in the x-direction with sub-micron precision independent of the stage;providing a breaking pin and arranging the breaking pin under the sample coincident to a bottom surface of the sample at a position that is directly opposite from the indentation on the top surface;selecting a cleaving bar movable up and down parallel to the vertical axis. the cleaving bar comprising a first pin and a second pin and contacting with the first pin the top surface of the sample on one side of the indentation and contacting the second pin against the top ...

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Номер записи: 27
19-03-2020 дата публикации

Wafer producing method and laser processing apparatus

Номер: US20200086426A1
Автор: Kazuya Hirata, Ryohei Yamamoto
Принадлежит: Disco Corp

A wafer producing method includes a facet area detecting step of detecting a facet area from an upper surface of an SiC ingot, a coordinates setting step of setting the X and Y coordinates of plural points lying on the boundary between the facet area and a nonfacet area in an XY plane, and a feeding step of setting a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot, the predetermined depth corresponding to the thickness of the SiC wafer to be produced, next applying the laser beam from a focusing unit in a laser processing apparatus to the SiC ingot, and relatively moving the SiC ingot and the focal point in an X direction parallel to the X axis in the XY plane, thereby forming a belt-shaped separation layer extending in the X direction inside the SiC ingot.

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Номер записи: 28
19-03-2020 дата публикации

LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES

Номер: US20200091684A1
Автор: Poblenz Christiane, Raring James W., Schmidt Mathew
Принадлежит:

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions. 120.-. (canceled)21. A communication device comprising: a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;', 'an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;', 'an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;', 'a p-type cladding material overlying the active region;', 'a p-type material overlying the p-type cladding material;', 'a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;', 'a first facet formed on the first end; and', 'a second facet formed on the second end; and, 'a laser diode device comprisinga package coupled to the laser diode device.22. The device of wherein the active region comprises at least six quantum well regions.23. The device of wherein the active region is configured operably for a forward voltage of less than 7V for an output power of 60 mW and greater.24. The device of wherein the plurality of barrier layers is at least about 2.5 nm in thickness.25. The device of wherein each of the plurality of barrier layers is at least about 1.5 nm to about 2.5 nm in thickness.26. The device of wherein the{20-21} crystalline surface region is off-cut less than less than +/−10 deg towards a c-plane and/or an a-plane.27. The device of wherein one or more of the plurality of barrier layers is made of a ...

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Номер записи: 29
05-04-2018 дата публикации

Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates

Номер: US20180097337A1
Автор: Christiane Poblenz, James W. RARING, Mathew Schmidt
Принадлежит: Soraa Laser Diode Inc

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

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Номер записи: 30
14-04-2016 дата публикации

METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER

Номер: US20160102418A1
Автор: KUBOTA Toshimichi, NARUSHIMA Yasuhito, OGAWA Fukuo, UTO Masayuki
Принадлежит: SUMCO TECHXIV CORPORATION

A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 mΩ·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cmor less. 1. A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber , a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt , and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt , the method comprising:adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 m∩·cm;subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and{'sup': '2', 'pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cmor less.'}2. The manufacturing method of the single crystal according to claim 1 , further comprising:disposing a cooler above the crucible in the chamber; andcooling the single crystal with the cooler in a straight-body-formation step for forming a straight body of the single crystal, thereby appropriately controlling the period for the ...

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Номер записи: 31
23-04-2015 дата публикации

SINGULATION APPARATUS AND METHOD

Номер: US20150111366A1
Автор: CHENG Chi Wah, CHOW Eric Lap Kei, LIU Chun Kit, TANG Joseph Hoi Shuen
Принадлежит:

Disclosed is a singulation apparatus, comprising: at least one chuck station to which a workpiece is securable, the at least one chuck station being configured to move along a feed direction; a bridge extending above the at least one chuck station, the bridge having a first side and a second side opposite the first side; a first cutting device members mounted to the bridge and being independently movable along the first side, transversely to the feed direction; and a second cutting device members mounted to the bridge and being independently movable along the second side, transversely to the feed direction, the first and second cutting devices being for cutting the workpiece. A singulation method is also disclosed. 1. A singulation apparatus , comprising:at least one chuck station to which a workpiece is securable, the at least one chuck station being configured to move along a feed direction;a bridge extending above the at least one chuck station, the bridge having a first side and a second side opposite the first side;a first cutting device mounted to the bridge and being independently movable along the first side, transversely to the feed direction; anda second cutting device mounted to the bridge and being independently movable along the second side, transversely to the feed direction, the first and second cutting devices being for cutting the workpiece.2. The singulation apparatus according to claim 1 , wherein the bridge comprises a first bridge member to which the first cutting device is mounted claim 1 , and a second bridge member to which the second cutting device is mounted claim 1 , the second bridge member being separated from the first bridge member.3. The singulation apparatus according to claim 1 , wherein each of the first and second cutting devices comprises a plurality of cutting members.4. The singulation apparatus according to claim 3 , wherein the plurality of cutting members of each of the first and second cutting devices are arranged in one or ...

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Номер записи: 32
04-04-2019 дата публикации

AUTOMATED TRANSFER AND DRYING TOOL FOR PROCESS CHAMBER

Номер: US20190103314A1
Автор: Chu Yang-Ann, Kuo Shou-Wen, KUO Tsung-Sheng, Liu Hsu-Shui, Pai Jiun-Rong
Принадлежит:

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die. 1. A processing tool for processing a singulated semiconductor die , comprising:an evaluation unit configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die, wherein the liquid is present on a frontside and a backside of the semiconductor die after the singulated semiconductor die has been evaluated;a drying unit configured to dry the liquid from a frontside of the singulated semiconductor die; anda die wipe station comprising an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.2. The processing tool of claim 1 , wherein the die wipe station comprises:a plate having a central plate region and a peripheral plate region, wherein outer sidewalls extend upwardly from the peripheral plate region such that an upper surface of the central plate region is recessed relative to upper regions of the outer sidewalls; anda cloth or sponge corresponding to the absorptive drying structure and arranged on the central plate region and laterally confined by the outer sidewalls.3. The processing tool of claim 2 , wherein the die wipe station comprises:a support structure having a substantially planar surface configured to ...

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Номер записи: 33
11-04-2019 дата публикации

APPARATUS FOR DIVIDING WORKPIECE

Номер: US20190109023A1
Автор: HIRATE Makoto, KANEOKA Kazuki, Mihai Chris, TAKAHARA Takushi
Принадлежит:

A dividing apparatus divides a workpiece along projected dicing lines into chips, the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame. The dividing apparatus includes a frame holding unit for holding the annular frame and a dividing unit for pressing the workpiece in the vicinity of one at a time of the projected dicing lines and dividing the workpiece into chips along the projected dicing line. The dividing unit includes a holder for holding a portion of the workpiece in the vicinity of the projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece, and a presser for pressing chips next to chips held by the holder across the projected dicing line where the workpiece is to be broken, thereby to divide the workpiece along the projected dicing line. 1. A dividing apparatus for dividing a plate-shaped workpiece along projected dicing lines thereon , the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame and having a strength reduced along the projected dicing lines , comprising:a frame holding unit having a holding surface for holding the annular frame, the frame holding unit being rotatable about its own axis;a detecting unit configured to detect the projected dicing lines on the workpiece stuck to the protective tape;a dividing unit configured to divide the workpiece into chips along a projected dicing line among the plurality of the projected dicing lines detected by the detecting unit; anda moving mechanism configured to move the frame holding unit and the dividing unit with respect to each other; whereinthe dividing unit includes:a holder configured to hold one of two regions of the workpiece which are next to each other across the detected projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece; anda presser configured to press an other of the two regions of the workpiece ...

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Номер записи: 34
27-04-2017 дата публикации

Laser machining device and laser machining method

Номер: US20170113298A1
Автор: Kenshi Fukumitsu
Принадлежит: Hamamatsu Photonics KK

The controllability of modified spots is improved. A laser processing apparatus 100 comprises a first laser light source 101 for emitting a first pulsed laser light L 1 , a second laser light source 102 for emitting a second pulsed laser light L 2 , half-wave plates 104, 105 for respectively changing directions of polarization of the pulsed laser light L 1 , L 2 , polarization beam splitters 106, 107 for respectively polarization-separating the pulsed laser light L 1 , L 2 having changed the directions of polarization, and a condenser lens 112 for converging the polarization-separated pulsed laser light L 1 , L 2 at an object to be processed 1 . When the directions of polarization of the pulsed laser light L 1 , L 2 changed by the half-wave plates 104, 105 are varied by a light intensity controller 121 in the laser processing apparatus 100 , the ratios of the pulsed laser light L 1 , L 2 polarization-separated by the polarization beam splitters 106, 107 are altered, whereby the respective intensities of the pulsed laser light L 1 , L 2 are adjusted.

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Номер записи: 35
27-04-2017 дата публикации

METHOD FOR DIVIDING BRITTLE-MATERIAL SUBSTRATE

Номер: US20170113960A1
Автор: SOYAMA Hiroshi
Принадлежит:

A cutter edge is pressed against a brittle-material substrate so that a protruding portion of the cutter edge is positioned between a first edge of the brittle-material substrate and a side portion of the cutter edge and that a side portion of the cutter edge is positioned between the protruding portion of the cutter edge and a second edge of the brittle-material substrate. A scribe line is formed by a scratch between a first position closer to the first edge of the first and second edges and a second position closer to the second edge of the first and second edges. After the formation of the scribe line, a crack is extended in a thickness direction from the second position toward the first position along the scribe line, thus forming a crack line. 1. A method for dividing a brittle-material substrate , the method comprising:preparing a brittle-material substrate including a surface and having a thickness direction perpendicular to said surface, said surface being surrounded by a perimeter including first and second edges opposite to each other;pressing a cutter edge against said surface of said brittle-material substrate, said cutter edge including a protruding portion and a side portion extending from said protruding portion and having a convex shape, said pressing being performed so that, on said surface of said brittle-material substrate, said protruding portion of said cutter edge is positioned between said first edge and said side portion and said side portion of said cutter edge is positioned between said protruding portion and said second edge;forming a scribe line having a groove shape between a first position closer to said first edge of said first and second edges and a second position closer to said second edge of said first and second edges on said surface of said brittle-material substrate by causing said cutter edge pressed in said pressing to slide on said surface of said brittle-material substrate;after said forming a scribe line, forming a crack ...

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Номер записи: 36
18-04-2019 дата публикации

Method for cutting watch crystals

Номер: US20190113890A1
Автор: Jean-Luc Bazin, Martin Gunn-Sechehaye
Принадлежит: Swatch Group Research and Development SA

Method for cutting a watch crystal along a contour in a plate of transparent material, with the following steps: making, on a first side of the plate, a first cut line or kerf to form a first chamfer, for each crystal of the plate; turning the plate over and marking the position of the first chamfers or of a previously made machined marking; making, on a second side, a second cut line or kerf to form a second chamfer, for each crystal; separating the crystals by machining through the plate at each contour to form an edge of the crystal.

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Номер записи: 37
25-04-2019 дата публикации

Method And Device For Cutting Sapphire

Номер: US20190118306A1
Автор: Diao Lingtian, GAO Yunfeng, Liu Xiao, LU Jiangang, Ma Guodong, Peng Yuguo, Tang Jiangang, Yin Jiangang, Yuan Xuerui, Zhang Xiaojun
Принадлежит: Han's Laser Technology Industry Group Co., Ltd.

A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first COlaser beam the coating via a COfocusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second COlaser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second COlaser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels. 1. A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body , the method comprising:focusing a first CO2 laser beam the coating via a CO2 focusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed;focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; and scanning, by the second CO2 laser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second CO2 laser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.2. The method of claim 1 , wherein prior to focusing the first CO2 laser beam on ...

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Номер записи: 38
16-04-2020 дата публикации

SEPARATION OF TRANSPARENT WORKPIECES

Номер: US20200115269A1
Автор: Gerstner Klaus, Habeck Andreas, Haselhorst Georg, Ortner Andreas, Wagner Fabian
Принадлежит: SCHOTT AG

A method is provided for preparing transparent workpieces for separation. The method includes generating aligned filament formations extending transversely through the workpiece along an intended breaking line using ultra-short laser pulses. 1. A method for separating a workpiece by focused laser radiation , comprising:exposing the workpiece to a first atmosphere including protective gas;directing ultra-short pulsed laser radiation onto the workpiece, the workpiece being transparent in a range of wavelengths of the laser radiation to cause a filamentary material modification in depth in the workpiece;moving the workpiece and/or laser radiation with respect to one another to define a separation area in the workpiece;exposing, after the laser irradiation, the workpiece to a second atmosphere including a content of hydroxyl (OH) ions that is higher than that of the protective gas atmosphere;breaking the workpiece along the separation area defined by the material modification.2. The method as claimed in claim 1 , wherein the workpiece comprises toughened glass or glass ceramics.3. An apparatus for separating glass or glass ceramics by focused laser radiation claim 1 , comprising:a workpiece chamber for accommodating the glass or glass ceramics;a workpiece feeder that feed the glass or glass ceramics into the workpiece chamber;an ultra-short pulsed laser light source that generates a filamentary material modification in depth in the glass or glass ceramics by laser irradiation;a displacing device that moves the workpiece and/or the laser light source relative to each another;wet steam feed device that feeds a gas stream into the workpiece chamber; anda separating device that separates the workpiece along a separation line defined by the material modification. This application is a continuation of U.S. application Ser. No. 14/711,881 filed May 14, 2015, now allowed, which is a continuation of International Application No. PCT/EP2013/073329 filed Nov. 8, 2013, which claims ...

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Номер записи: 39
16-04-2020 дата публикации

METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE

Номер: US20200118878A1
Автор: Grivna Gordon M.
Принадлежит: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer. 1. A method of forming an electronic device comprising:providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed atop the second major surface, and wherein the layer of material is placed onto a first carrier substrate comprising a first adhesive layer;singulating the wafer through the spaces to form singulation lines without singulating through the layer of material so that portions of the layer of material overlap the singulation lines;placing a second carrier substrate comprising a second adhesive layer onto the singulated wafer such that the second adhesive layer faces the first carrier substrate and the singulated wafer is interposed between the first carrier substrate and the second carrier substrate; andmoving a roller structure adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the portions of layer of material that ...

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Номер записи: 40
10-05-2018 дата публикации

SPLITTING OF A SOLID USING CONVERSION OF MATERIAL

Номер: US20180126484A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf
Принадлежит:

The invention relates to a method for creating a detachment zone () in a solid () in order to detach a solid portion (), especially a solid layer (), from the solid (), said solid portion () that is to be detached being thinner than the solid from which the solid portion () has been removed. According to the invention, the method comprises at least the steps of: providing a solid () which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid () to LASER radiation from the LASER light source so that the laser beams penetrate into the solid () via a surface () of the solid portion () that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid () inside the solid () such that a detachment zone () or a plurality of partial detachment zones () is formed; the method is characterized in that a number of modifications () is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications () as a result of the modifications (), said fissures in the region of the modifications () predefining the detachment zone () or a plurality of partial detachment zones (). 116-. (canceled)17. A method for creating a detachment zone in a solid in order to detach a solid portion , in particular a solid layer , from the solid , wherein the solid portion to be detached is thinner than the solid from which the solid portion has been removed , at least comprising the steps:providing a solid to be processed, wherein the solid preferably consists of a chemical compound;providing a laser light source;subjecting the solid to laser radiation from the laser light source,wherein the laser beams penetrate into the solid via a surface of the solid portion to be cut off,wherein the laser radiation is applied in a defined manner to a predefined portion of the solid inside the ...

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Номер записи: 41
08-09-2022 дата публикации

METHOD OF MANUFACTURING PLATE-LIKE MEMBER, INTERMEDIARY BODY OF PLATE-LIKE MEMBER, AND PLATE-LIKE MEMBER

Номер: US20220281137A1
Автор: KUNIMOTO Tomomichi
Принадлежит:

Provided is: a method of manufacturing plate-like members and an intermediate body for plate-like members whereby the occurrence of shape defects in the plate-like members can be prevented; and a plate-like member in which shape defects are prevented. The method includes the steps of: providing a first breaking groove in a first principal surface of a base material for plate-like members, the base material having the first principal surface and a second principal surface opposed to each other, and then providing a second breaking groove in the second principal surface of the base material in a direction crossing the first breaking groove in plan view to form an intermediate body for wavelength conversion members (plate-like members); and breaking the intermediate body for wavelength conversion members into separate parts along one of the first breaking groove and the second breaking groove and then breaking the intermediate body for wavelength conversion members into separate parts along the other breaking groove, wherein in breaking the intermediate body for wavelength conversion members into separate parts along the first breaking groove , the intermediate body is broken into separate parts along the first breaking groove by pressing the intermediate body from the second principal surface side, and in breaking the intermediate body for wavelength conversion members into separate parts along the second breaking groove , the intermediate body is broken into separate parts along the second breaking groove by pressing the intermediate body from the first principal surface side. 1: A method of manufacturing a plate-like member , the method comprising the steps of:providing a first breaking groove in a first principal surface of a base material for plate-like members, the base material having the first principal surface and a second principal surface opposed to each other, and then providing a second breaking groove in the second principal surface of the base material ...

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Номер записи: 42
10-06-2021 дата публикации

SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW AND RELATED METHODS

Номер: US20210170632A1
Автор: Bubel Simon, Currier Ian, Donofrio Matthew, Edmond John
Принадлежит:

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material. 1. A silicon carbide (SiC) wafer comprising:a silicon face and a carbon face;a diameter of at least 200 millimeters (mm); anda relaxed positive bow from the silicon face.2. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 50 μm.3. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 40 μm.4. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 15 μm.5. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range including 30 μm to 50 μm.6. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range including 8 μm to 16 μm.7. The SiC wafer of claim 1 , wherein the SiC wafer comprises an n-type conductive SiC wafer.8. The SiC wafer of claim 1 , wherein the SiC wafer comprises a semi-insulating SiC wafer.9. The SiC wafer of claim 1 , wherein the SiC wafer comprises an unintentionally doped SiC wafer.10. The SiC wafer of claim 1 , wherein the carbon face of the SiC wafer comprises a shape that corresponds to the relaxed positive bow from the silicon face.11. The SiC wafer of claim 1 , wherein a profile of the silicon ...

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Номер записи: 43
02-06-2016 дата публикации

METHOD OF AND APPARATUS FOR DIVIDING PLATE MEMBER MADE OF BRITTLE MATERIAL

Номер: US20160151929A1
Автор: KIRITOSHI Takanori, NAKAZAWA Mutsuhiro, OGUSHI Osami, TSUJITA Keiji
Принадлежит: KAWASAKI JUKOGYO KABUSHIKI KAISHA

A method of dividing a plate member made of a brittle material includes; first, forming a minute start point flaw in a first main surface of a plate member on a division-planned line; then holding the first main surface of the plate member on a pair of lines; and thereafter, for example, bringing a dividing member, which heats up a second main surface of the plate member by contact heating, into contact with the second main surface of the plate member to generate a tensile thermal stress on the first main surface and applying bending force in a thickness direction of the plate member to the second main surface of the plate member, such that a tensile stress derived from the bending force and the tensile thermal stress are combined together. In this manner, the plate member is divided along the division-planned line. 1. A method of dividing a plate member made of a brittle material along a division-planned line , the method comprising:forming a minute start point flaw in a first main surface of the plate member on the division-planned line;holding the first main surface of the plate member on a pair of lines between which the division-planned line is laid, the pair of lines being parallel to the division-planned line; anddividing the plate member along the division-planned line by bringing a dividing member that extends along the division-planned line and that heats up or cools down the plate member by contact heating or contact cooling into contact with the plate member to generate a tensile thermal stress on the first main surface of the plate member and by applying bending force in a thickness direction of the plate member to a second main surface of the plate member along the division-planned line, the second main surface facing in a direction opposite to a facing direction of the first main surface, such that a tensile stress derived from the bending force and the tensile thermal stress are combined together.2. The method of dividing a plate member made of a ...

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Номер записи: 44
01-06-2017 дата публикации

WAFER PRODUCING METHOD

Номер: US20170151627A1
Автор: Hirata Kazuya
Принадлежит:

A wafer having an off angle α is produced from a hexagonal single crystal ingot having an upper surface, a c-plane exposed to the upper surface, and a c-axis perpendicular to the c-plane. The ingot is supported by a wedge member having a wedge angle α equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane. A modified layer is formed by setting the focal point of a laser beam inside the ingot and next applying it to the upper surface, thereby linearly forming a modified layer inside the ingot and cracks extending from the modified layer along the c-plane. The focal point is moved in the second direction to index the focal point by a predetermined amount. 1. A wafer producing method for producing a wafer having an off angle α from a hexagonal single crystal ingot having an upper surface , a c-plane exposed to the upper surface , and a c-axis perpendicular to the c-plane , the wafer producing method comprising:a supporting step of supporting the ingot through a wedge member having a wedge angle α to a support table having a horizontal supporting surface, the wedge angle α being equal to the off angle α, thereby inclining the upper surface of the ingot by the off angle α with respect to a horizontal plane;a first modified layer forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a fixed vertical position and next applying the laser beam to the upper surface as relatively moving the focal point and the ingot in a first direction perpendicular to a second direction where the off angle α is formed, thereby linearly forming a first modified layer inside the ingot and first cracks extending from the first modified layer along the c-plane;a first indexing step of relatively moving the focal point in the second direction to index the focal point by a predetermined amount; andan initial wafer producing step of separating an initial wafer ...

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Номер записи: 45
09-06-2016 дата публикации

Wafer producing method

Номер: US20160158881A1
Автор: Kazuya Hirata, Kunimitsu Takahashi, Yoko Nishino
Принадлежит: Disco Corp

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot includes a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. In the separation start point forming step, the laser beam is applied to the ingot plural times with the focal point of the laser beam set at the modified layer previously formed, thereby separating the cracks from the modified layer.

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Номер записи: 46
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158882A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. A plate-shaped member having a thickness corresponding to the thickness of the wafer is separated from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the ...

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Номер записи: 47
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158883A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot is disclosed. The wafer producing method includes a separation start point forming step of forming a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer to thereby form a separation start point in the ingot. The separation start point forming step includes a first separation start point forming step of setting the focal point of a laser beam at a first depth which is N times (N is an integer not less than 2) the depth corresponding to the thickness of the wafer from the upper surface of the ingot and next applying the laser beam to the ingot to thereby form a first separation start point composed of a first modified layer and first cracks extending therefrom. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a modified layer forming step of ...

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Номер записи: 48
09-06-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160158892A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A wafer producing method produces a hexagonal single crystal wafer from a hexagonal single crystal ingot. The method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. The separation start point forming step includes an indexing step of relatively moving the focal point in a direction of formation of an off angle to thereby index the focal point by a predetermined index amount. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a ...

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Номер записи: 49
01-06-2017 дата публикации

Method for singulating a multiplicity of chips

Номер: US20170154853A1
Автор: Frank Pueschner, Peter Stampka
Принадлежит: INFINEON TECHNOLOGIES AG

A method for singulating a multiplicity of chips is provided. Each chip includes a substrate, an active region arranged at least one of in or on the substrate, at least one electronic component being formed in said active region, and a dielectric above the active region. The method includes forming at least one first trench between the chips. The at least one first trench is formed through the dielectric and the active regions and extends into the substrate. The method further includes sawing the substrate material from the opposite side of the substrate relative to the first trench along a sawing path corresponding to the course of at least one first trench, such that at least one second trench is formed. The width of the at least one first trench is less than or equal to the width of the at least one second trench.

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Номер записи: 50
30-05-2019 дата публикации

Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane

Номер: US20190160598A1
Автор: Mironov Aleksey Vladimirovich, Rebane Yury Toomasovich, Shreter Yury Georgievich
Принадлежит:

This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules. 1. A method of separating a surface layer of a semiconductor crystal , the method comprising:generating a pulse laser emission;directing a focused laser beam onto the crystal in such a way that focus is placed in a layer separation plane perpendicular to an axis of the beam;moving the laser beam in such a way that focus is moved in the layer separation plane with forming non-overlapping local regions with a disturbed topology of structure of the crystal structure and with reduced interatomic bonds, wherein the local regions are distributed over the whole the layer separation plane;applying an external action to a separable layer disturbing the reduced interatomic bonds.2. The method according to claim 1 , wherein the external action is a mechanical action.3. The method according to claim 1 , wherein the external action is a thermomechanical action.4. The method according to claim 3 , wherein the thermomechanical action is created using a metal plate attached to an external surface of the separable layer and heating up to temperature of 50° C.-1000° C.5. The method according to claim 1 , wherein a distance ...

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Номер записи: 51
30-05-2019 дата публикации

PEELING APPARATUS

Номер: US20190160708A1
Автор: HINOHARA Kazuyuki, YAMAMOTO RYOHEI
Принадлежит:

A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot. 1. A peeling apparatus for peeling off a wafer from an ingot formed therein with a peel-off layer by applying a laser beam of such a wavelength as to be transmitted through the ingot to the ingot , with a focal point of the laser beam positioned at a depth corresponding to the thickness of the wafer , the peeling apparatus comprising:an ingot holding unit holding the ingot with an ingot portion corresponding to the wafer being faced up;an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and which oscillates an ultrasonic wave;a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; anda peeling unit which holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.2. The peeling apparatus according to claim 1 ,wherein the ingot is a single crystal SiC ingot having a c-axis and a c-plane orthogonal to the c-axis, andthe peel-off layer is a peel-off layer including a modified portion and a crack, the modified portion and the crack being formed by a process in which a laser beam of such a wavelength as to be transmitted through single crystal SiC is applied to the single crystal SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of the wafer from an end face of ...

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Номер записи: 52
25-06-2015 дата публикации

Workpiece cutting method

Номер: US20150174698A1
Автор: Takeshi Yamada, Yoko TAJIKARA
Принадлежит: Hamamatsu Photonics KK

The object cutting method comprises a step of locating a converging point of laser light within a monocrystal sapphire substrate, while using a rear face of the monocrystal sapphire substrate as an entrance surface of the laser light, and relatively moving the converging point along each of a plurality of lines to cut set parallel to the m-plane and rear face of the substrate, so as to form a modified region within the substrate along each line and cause a fracture to reach the rear face. In this step, ΔY=(tan α)·(t−Z)±[(d/2)−m] is satisfied, where m is the amount of meandering of the fracture in the front face.

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Номер записи: 53
01-07-2021 дата публикации

Method for Reducing the Thickness of Solid-State Layers Provided with Components

Номер: US20210197314A1
Автор: Christian Beyer, Jan Richter, Marko Swoboda, Ralf Rieske
Принадлежит: SILTECTRA GmbH

The invention relates to a method for separating at least one solid-state layer ( 4 ) from at least one solid ( 1 ). The method according to the invention includes the steps of: producing a plurality of modifications ( 9 ) by means of laser beams in the interior of the solid ( 1 ) in order to form a separation plane ( 8 ); producing a composite structure by arranging or producing layers and/or components ( 150 ) on or above an initially exposed surface ( 5 ) of the solid ( 1 ), the exposed surface ( 5 ) being part of the solid-state layer ( 4 ) to be separated; introducing an external force into the solid ( 1 ) in order to create stresses in the solid ( 1 ), the external force being so great that the stresses cause a crack to propagate along the separation plane ( 8 ), wherein the modifications for forming the separation plane ( 8 ) are produced before the composite structure is produced.

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Номер записи: 54
01-07-2021 дата публикации

SiC INGOT PROCESSING METHOD AND LASER PROCESSING APPARATUS

Номер: US20210197319A1
Автор: Hirata Kazuya
Принадлежит:

A method of processing a SiC ingot includes a resistance value measuring step of measuring an electric resistance value of an end face of the SiC ingot, a laser beam output adjusting step of adjusting the output of a laser beam according to the electric resistance value measured in the resistance value measuring step, and a peeling belt forming step in which, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in an X-axis direction to form a belt-shaped peeling belt in the inside of the SiC ingot. 1. A method of processing a SiC ingot having an end face , the method comprising:a resistance value measuring step of measuring an electric resistance value of the end face of the SiC ingot;a laser beam output adjusting step of adjusting output of a laser beam according to the electric resistance value measured in the resistance value measuring step;a peeling belt forming step in which, in a case where a c-plane is inclined relative to the end face of the SiC ingot and in a case where a direction orthogonal to a direction in which an off angle is formed between the end face of the SiC ingot and the c-plane is set as an X-axis direction while a direction orthogonal to the X-axis direction is set as a Y-axis direction, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in the X-axis direction to form a belt-shaped peeling belt in which a crack extends along the c-plane from a part where SiC is separated into Si and C; andan indexing feeding step of putting the SiC ingot and ...

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Номер записи: 55
28-05-2020 дата публикации

METHOD FOR LASER MACHINING INSIDE MATERIALS

Номер: US20200164470A1
Автор: Booth Martin James, SALTER Patrick
Принадлежит:

The invention provides a method for laser modification of a sample to form a modified region at a target location within the sample. The method comprises positioning a sample in a laser system for modification by a laser; measuring tilt of a surface of the sample through which the laser focusses; using at least the measured tilt to determine a correction to be applied to an active optical element of the laser system; applying the correction to the active optical element to modify wavefront properties of the laser to counteract an effect of coma on laser focus; and laser modifying the sample at the target location using the laser with the corrected wavefront properties to produce the modified region. 1. A method for laser modification of a sample to form a modified region at a target location within the sample , comprising:positioning a sample in a laser system for modification by a laser;measuring tilt of a surface of the sample through which the laser focusses;using at least the measured tilt to determine a correction to be applied to an active optical element of the laser system;applying the correction to the active optical element to modify wavefront properties of the laser to counteract an effect of coma on laser focus; andlaser modifying the sample at the target location using the laser with the corrected wavefront properties to produce the modified region.2. A method as claimed in claim 1 , comprising measuring the position of the sample within the laser system;using also the measured position to determine a fabrication depth and the correction to be applied to the active optical element of the laser system.3. A method as claimed in or claim 1 , comprising applying the correction to the active optical element to modify wavefront properties of the laser to counteract an effect of spherical aberration on laser focus.4. A method as claimed in or claim 1 , comprising measuring the sample after forming the modified region claim 1 , and modifying the correction ...

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Номер записи: 56
08-07-2021 дата публикации

SUBSTRATE DIVIDING METHOD

Номер: US20210210387A1
Автор: Fujii Yoshimaro, Fukumitsu Kenshi, FUKUYO Fumitsugu, Uchiyama Naoki
Принадлежит: HAMAMATSU PHOTONICS K.K.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 1. A substrate dividing method comprising the steps of:irradiating a substrate with laser light while positioning a light-converging point within the substrate, so as to form a modified region due to multiphoton absorption within the substrate, and causing the modified region to form a starting point region for cutting along a line along which the substrate should be cut in the substrate inside by a predetermined distance from a laser light incident face of the substrate; andgrinding the substrate after the step of forming the starting point region for cutting such that the substrate attains a predetermined thickness.2. A substrate dividing method according to claim 1 , wherein the substrate is a semiconductor substrate.3. A substrate dividing method according to claim 2 , wherein the modified region is a molten processed region.4. A substrate dividing method according to claim 1 , wherein the substrate is an insulating substrate.5. A substrate dividing method according to one of to claim 1 , wherein a front face of the substrate is formed with a functional device; andwherein a rear face of the substrate is ground in the step of grinding the substrate.6. A substrate dividing method according to ...

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Номер записи: 57
04-06-2020 дата публикации

WAFER DIVIDING APPARATUS

Номер: US20200171707A1
Автор: FUJII Yuhei, INAKAZU Susumu, Ishida Hideaki, KAWAGUCHI Yoshihiro, MASADA Takayuki, MATSUDA Tomohito, SAITO Ryota, Takesue Naoya
Принадлежит:

A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line is provided. The wafer dividing apparatus includes a cassette table movable upwardly and downwardly in a Z axis direction, a first carry-out/in unit that carries out the frame from the cassette placed on the cassette table or carry in the frame to the cassette, a first temporary receiving unit including a pair of first guide rails extending in the X axis direction and a guide rail opening/closing portion that increases the distance between the pair of first guide rails, a reversing unit including a holding portion that holds the frame and rotates by 180 degrees to reverse the front and back of the frame, and a transport unit that moves the reversed frame. 1. A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line , comprising:a cassette table on which a cassette that accommodates a plurality of wafers each stuck to an adhesive tape and supported at an opening of a frame is placed and which is movable upwardly and downwardly in a Z axis direction;a first carry-out/in unit configured to grasp the frame and move the frame in an X axis direction orthogonal to the Z axis direction to carry out the frame from the cassette placed on the cassette table or carry in the frame to the cassette;a first temporary receiving unit including a pair of first guide rails that extend in the X axis direction and configured to support the frame carried in by the first carry-out/in unit and a guide rail opening/closing portion configured to increase a distance between the pair of first guide rails in a Y axis direction orthogonal to the Z axis direction and the X axis direction so as to permit passage of the frame in the Z axis direction;a reversing unit including a holding portion configured to hold the frame ...

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Номер записи: 58
07-07-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160193690A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A separation start point is formed by setting a focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and form cracks extending from the modified layer along a c-plane, thus forming a separation start point. The focal point is indexed by relatively moving the focal point in the direction where an off angle is formed and the c-plane is inclined downward. 1a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step of relatively moving the focal point of the laser beam in a first direction perpendicular to a second direction where the c-axis is inclined by an off angle with respect to a normal to the first surface and the off angle is formed between the first surface and the c-plane, thereby linearly forming the modified layer extending in the first direction, and', 'an indexing step of relatively moving the focal ...

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Номер записи: 59
07-07-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160193691A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A separation start point is formed by setting a focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to a thickness of the wafer to be produced. The laser beam is applied to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and form cracks extending from the modified layer along a c-plane, thus forming a separation start point. The wafer is separated by immersing the ingot in water and then applying ultrasonic vibration to the ingot, thereby separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step of ...

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Номер записи: 60
06-07-2017 дата публикации

TRANSPARENT MATERIAL PROCESSING WITH AN ULTRASHORT PULSE LASER

Номер: US20170190000A1
Автор: ARAI Alan Y., Bovatsek James, Yoshino Fumiyo
Принадлежит: IMRA AMERICA, INC.

A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. This enables clean breaking of transparent materials at a higher speed than conventional techniques. 1. A method of scribing a transparent material , comprising: using a single scan of a focused beam of ultrashort laser pulses to simultaneously create a surface groove in said material and at least one modified region within the bulk of said material.2. A method for scribing a transparent material comprising using a single scan of a focused beam of ultrashort laser pulses to simultaneously create a plurality of modification regions within the bulk of said material in its depth direction.3. A transparent material scribed at two or more locations in a depth direction thereof by a single scan of a focused beam of ultrashort laser pulses.4. The transparent material according to claim 3 , wherein said two or more locations include a surface of said material having a groove formed therein.5. A system for scribing a transparent material claim 3 , comprising: an ultrashort laser source to generate a beam of ultrashort pulses; an optical system to focus and deliver said beam of ultrashort pulses to said material with optical intensity sufficiently high so as to produce non-linear absorption within said material and to modify said material so as to produce scribe features; and a motion system operatively connected to said ultrashort source and said optical system.6. The system according to claim 5 , wherein said scribe features are formed with spatially overlapping ultrashort pulses. This is a divisional of application Ser. No. 13/766,357, filed Feb. 13, 2013, which is a continuation of application Ser. No. 12/580,739, filed Oct. 16, 2009, now issued as U.S. Pat. No. 8,389,891 on Mar. 5, 2013 which is a divisional of ...

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Номер записи: 61
22-07-2021 дата публикации

WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

Номер: US20210221026A1
Автор: Nomaru Keiji
Принадлежит:

A wafer producing method for producing a wafer from a semiconductor ingot includes a thermal stress wave generating step of applying a pulsed laser beam having a wavelength that is absorbable by the semiconductor ingot to the semiconductor ingot held on the chuck table to generate a thermal stress wave and a fracture layer forming step of applying a pulsed laser beam having a wavelength that is transmittable through the semiconductor ingot to the semiconductor ingot in synchronism with a time during which the thermal stress wave reaches a position corresponding to a thickness of a wafer to be produced from the semiconductor ingot, causing the pulsed laser beam whose wavelength is transmittable through the semiconductor ingot to be absorbed in a region where a band gap is reduced by a tensile stress of the thermal stress wave. 1. A wafer producing method for producing a wafer from a semiconductor ingot , comprising:a holding step of holding the semiconductor ingot on a chuck table;a thermal stress wave generating step of applying a pulsed laser beam having a wavelength that is absorbable by the semiconductor ingot to an upper surface of the semiconductor ingot held on the chuck table to generate a thermal stress wave and propagating the thermal stress wave in the semiconductor ingot;a fracture layer forming step of applying a pulsed laser beam having a wavelength that is transmittable through the semiconductor ingot to the upper surface of the semiconductor ingot in synchronism with a time during which the thermal stress wave generated in the thermal stress wave generating step and propagated in the semiconductor ingot at a speed of sound depending on a material of the semiconductor ingot reaches a position corresponding to a thickness of a wafer to be produced from the semiconductor ingot, causing the pulsed laser beam whose wavelength is transmittable through the semiconductor ingot to be absorbed in a region where a band gap is reduced by a tensile stress of the ...

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Номер записи: 62
13-07-2017 дата публикации

SiC WAFER PRODUCING METHOD

Номер: US20170197277A1
Автор: Hirata Kazuya, Morishige Yukio
Принадлежит:

A SiC wafer is produced from an SiC ingot having an end surface by setting the focal point of a laser beam at a predetermined depth from the end surface. The depth corresponds to the thickness of the SiC wafer to be produced. The laser beam is applied to the end surface of the SiC ingot while relatively moving the focal point and the SiC ingot to thereby form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming a separation start point. The separation start point is formed by setting the numerical aperture of a focusing lens to form the focal point to 0.45 to 0.9 and substantially setting the Mfactor of the laser beam between 5 and 50 to thereby set the diameter of the focal point to 15 to 150 μm. 1. An SiC wafer producing method for producing an SiC wafer from an SiC ingot having an end surface , comprising:a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to the SiC ingot inside the SiC ingot at a predetermined depth from the end surface, which depth corresponds to the thickness of the SiC wafer to be produced, and next applying the laser beam to the end surface of the SiC ingot as relatively moving the focal point and the SiC ingot to thereby form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the SiC wafer from the SiC ingot at the separation start point after performing the separation start point forming step, thus producing the SiC wafer from the SiC ingot;{'sup': '2', 'the separation start point forming step including the steps of setting the numerical aperture of a focusing lens for forming the focal point to 0.45 to 0.9 and substantially setting the Mfactor of the laser beam to 5 to 50 to thereby set the diameter of the focal point to 15 to 150 μm ...

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Номер записи: 63
11-06-2020 дата публикации

Wafer Production Method

Номер: US20200185267A1
Автор: BEYER Christian, Drescher Wolfram, Richter Jan
Принадлежит:

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack. 1. A method for producing a layer of solid material , the method comprising:providing a solid body having a first surface and a second surface opposite the first surface, the second surface being part of the layer of solid material;generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane comprising regions with different concentrations of defects;providing a polymer layer on the solid body; andsubjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.2. The method of claim 1 , wherein the first surface of the solid body is level claim 1 , and wherein the ...

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Номер записи: 64
22-07-2021 дата публикации

COLD FLUID SEMICONDUCTOR DEVICE RELEASE DURING PICK AND PLACE OPERATIONS, AND ASSOCIATED SYSTEMS AND METHODS

Номер: US20210225672A1
Автор: Jensen Travis M., MCCLAIN BENJAMIN L., MINNICH JEREMY E.
Принадлежит:

Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die. 1. A system for handling semiconductor dies , comprising:a support member positioned to carry a semiconductor die releasably attached to a die attach region of a support substrate;a picking device having a vacuum pick head and positioned to pick the semiconductor die at a pick station; anda cooling member coupled to the pick head, wherein the cooling member is configured to direct a cold fluid toward the die attach region and/or the semiconductor die.2. The system of wherein the cooling member at least partially surrounds the pick head.3. The system of wherein the cooling member extends around an entire periphery of the pick head.4. The system of wherein the cooling member has an annular shape.5. The system of wherein the cooling member includes a port and defines a cavity claim 1 , wherein the port is fluidly coupled to a cold fluid source claim 1 , and wherein the cold fluid source is configured to at least partially fill the cavity with the cold fluid via the port.6. The system of wherein the support substrate includes a frame carrying a dicing tape.7. The system of wherein the semiconductor die has a lower surface and an upper surface opposite the ...

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Номер записи: 65
22-07-2021 дата публикации

Method for Producing a Layer of Solid Material

Номер: US20210225694A1
Автор: Christian Beyer, Jan Richter, Wolfram Drescher
Принадлежит: SILTECTRA GmbH

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

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Номер записи: 66
18-06-2020 дата публикации

METHOD FOR DIVIDING BRITTLE-MATERIAL SUBSTRATE

Номер: US20200189957A1
Автор: SOYAMA Hiroshi
Принадлежит:

A cutter edge is pressed against a brittle-material substrate so that a protruding portion of the cutter edge is positioned between a first edge of the brittle-material substrate and a side portion of the cutter edge and that a side portion of the cutter edge is positioned between the protruding portion of the cutter edge and a second edge of the brittle-material substrate. A scribe line is formed by a scratch between a first position closer to the first edge of the first and second edges and a second position closer to the second edge of the first and second edges. After the formation of the scribe line, a crack is extended in a thickness direction from the second position toward the first position along the scribe line, thus forming a crack line. 2. The method for dividing a brittle-material substrate according to claim 1 , whereinsaid cutter edge includes first to third surfaces adjacent to each other, a vertex at which said first to third surfaces meet, and a ridge formed by said second and third surfaces, andsaid protruding portion of said cutter edge comprises said vertex, and said side portion of said cutter edge comprises said ridge.3. The method for dividing a brittle-material substrate according to claim 1 , whereinsaid cutter edge has a shape of a cone including a vertex and a conical surface, andsaid protruding portion of said cutter edge comprises said vertex, and said side portion of said cutter edge is formed along an imaginary line extending from said vertex on said conical surface.4. The method for dividing a brittle-material substrate according to claim 1 , wherein said forming a scribe line comprisesdisplacing said cutter edge from said first position to said second position,increasing a load to be applied to said cutter edge at said second position, andcausing said cutter edge to which the increased load has been applied to slide beyond said second edge.5. The method for dividing a brittle-material substrate according to claim 1 , wherein said ...

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Номер записи: 67
28-07-2016 дата публикации

METHOD AND APPARATUS FOR SCRIBING SILICON CARBIDE PLATE

Номер: US20160214276A1
Автор: Bando Kazuaki
Принадлежит:

A scribing apparatus includes a horizontal table on which a silicon carbide plate is fixed under vacuum suction; a feed screw and a Y-axis control motor for moving the table along a pair of guide rails under scribe numerical control; a guide rail device body installed above the table along an X-axis direction; a carriage mounted on the guide rail device body so as to move in the X-axis direction while being guided; a feed screw and an X-axis control motor for moving the carriage in the X-axis direction under numerical control; and a scribe head installed on the carriage 1. A silicon carbide plate scribing method comprising the steps of: first scribing a dent at a scribe starting point at the time of a scribing start; and starting scribing from within said dent.2. A silicon carbide plate scribing method comprising the steps of: first causing a cutter wheel to rotate or swing in a state in which said cutter wheel is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent at the starting point; and subsequently starting scribing from within said dent.3. A silicon carbide plate scribing method comprising the steps of: first causing a diamond scribe stylus provided separately from a cutter wheel to rotate or swing in a state in which said diamond scribe stylus is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent; subsequently causing said cutter wheel to be brought into pressure contact with the silicon carbide plate at the dent formed; and starting scribing from within said dent.4. A scribing apparatus comprising: a scribe head having a cutter wheel and adapted to scribe a scribe line by rolling said cutter wheel in a state of being pressure contact with a silicon carbide plate; and a diamond stylus unit which has a diamond scribe stylus and causes said diamond scribe stylus to be brought ...

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Номер записи: 68
06-08-2015 дата публикации

WORKPIECE CUTTING METHOD

Номер: US20150217399A1
Автор: Tajikara Yoko, YAMADA Takeshi
Принадлежит:

The object cutting method comprises a step of locating a converging point of laser light within a monocrystal sapphire substrate, while using a rear face of the monocrystal sapphire substrate as an entrance surface of the laser light, and relatively moving the converging point along each of a plurality of lines to cut set parallel to the m-plane and rear face of the substrate, so as to form a modified region within the substrate along each line and cause a fracture to reach a front face. In this step, t−[(d/)−m]/tan α Подробнее

Номер записи: 69
06-08-2015 дата публикации

Method for cutting object to be processed

Номер: US20150217400A1
Автор: Takeshi Yamada
Принадлежит: Hamamatsu Photonics KK

The object cutting method comprises the steps of locating a converging point of laser light within a monocrystal sapphire substrate, while using a rear face of the monocrystal sapphire substrate as an entrance surface of the laser light, and relatively moving the converging point from one side to the other side along each of a plurality of lines to cut set parallel to the a-plane and rear face of the substrate, so as to form a modified region within the substrate along each line; and thereafter exerting an external force on the object along each line, so as to extend a fracture occurring from the modified region, thereby cutting the object along each line.

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Номер записи: 70
25-06-2020 дата публикации

SUBSTRATE DIVIDING METHOD

Номер: US20200203225A1
Автор: Fujii Yoshimaro, Fukumitsu Kenshi, FUKUYO Fumitsugu, Uchiyama Naoki
Принадлежит: HAMAMATSU PHOTONICS K.K.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate having a front face formed with functional devices with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face of the semiconductor substrate after the step of forming the starting point region for cutting such that the semiconductor substrate attains a predetermined thickness. 1. A substrate dividing method comprising the steps of:irradiating a substrate with laser light while positioning a light-converging point within the substrate, so as to form a modified region due to multiphoton absorption within the substrate, and causing the modified region to form starting point region for cutting along a line along which the substrate should be cut in the substrate inside by a predetermined distance from a laser light incident face of the substrate; andgrinding the substrate after the step of forming the starting point region for cutting such that the substrate attains a predetermined thickness.2. A substrate dividing method according to claim 1 , wherein the substrate is a semiconductor substrate.3. A substrate dividing method according to claim 2 , wherein the modified region is a molten processed region.4. A substrate dividing method according to claim 1 , wherein the substrate is an insulating substrate.5. A substrate dividing method according to claim 1 , wherein a front face of the substrate is formed with a functional device; andwherein a rear face of the substrate is ground in the step of grinding the substrate.6. A substrate dividing method according to claim 5 , ...

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Номер записи: 71
05-08-2021 дата публикации

AUTOMATED TRANSFER AND DRYING TOOL FOR PROCESS CHAMBER

Номер: US20210242085A1
Автор: Chu Yang-Ann, Kuo Shou-Wen, KUO Tsung-Sheng, Liu Hsu-Shui, Pai Jiun-Rong
Принадлежит:

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die. 1. A processing tool for processing a singulated semiconductor die , comprising:an evaluation unit configured to subject the singulated semiconductor die to a liquid;a drying unit configured to dry the liquid from a frontside of the singulated semiconductor die; anda die wipe station downstream of the drying unit and comprising an absorptive drying structure configured to absorb liquid from a backside of the singulated semiconductor die.2. The processing tool of claim 1 , wherein the die wipe station comprises:a plate having a central plate region and a peripheral plate region, wherein outer sidewalls extend upwardly from the peripheral plate region such that an upper surface of the central plate region is recessed relative to upper regions of the outer sidewalls; anda cloth or sponge corresponding to the absorptive drying structure and arranged on the central plate region and laterally confined by the outer sidewalls.3. The processing tool of claim 2 , wherein the die wipe station comprises:a support structure having a substantially planar surface configured to receive a die tray and a plurality of legs supporting the substantially planar surface; andwherein an outer edge of the peripheral plate region meets an outer edge of the substantially planar surface.4. The processing tool of claim 1 , wherein the evaluation unit ...

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Номер записи: 72
03-08-2017 дата публикации

Combined wafer production method with a receiving layer having holes

Номер: US20170217048A1
Автор: Anas Ajaj, Christian Beyer, Jan Richter
Принадлежит: SILTECTRA GmbH

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body ( 2 ) for separating at least one solid body layer ( 4 ), fixing the receiving layer ( 10 ) for holding the solid layer ( 4 ) to the solid body ( 2 ), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer ( 10 ) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body ( 2 ), wherein a crack in the solid body ( 2 ) along a separation plane ( 8 ) expands due to the voltages, the solid layer ( 4 ) being separated from the solid body ( 2 ) due to the crack.

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Номер записи: 73
11-08-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160228983A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot includes a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface and cracks extending from the modified layer along a c-plane in the ingot, thus forming a separation start point. The ingot is immersed in water after forming the separation start point in the ingot, and ultrasonic vibration is applied to the ingot to thereby separate a plate-shaped member corresponding to the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified ...

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Номер записи: 74
11-08-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160228984A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot. The separation start point forming step includes a first step of forming the separation start point with a first power and a second step of setting the focal point at the modified layer previously formed in the first step and then applying the laser beam to the ingot with a second power higher than the first power at an increased repetition frequency in the condition where the energy per pulse of the laser beam is the same as that in the first step, thereby separating the cracks from the modified layer. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step ...

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Номер записи: 75
11-08-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160228985A1
Автор: Hirata Kazuya, Nishino Yoko, Takahashi Kunimitsu
Принадлежит:

A crystal wafer is produced from a hexagonal crystal ingot. A separation start point is formed by setting the focal point of a laser beam inside the ingot at a predetermined depth, which depth corresponds to the thickness of the wafer to be produced. The laser beam is applied to the upper surface of the ingot while relatively moving the focal point and the ingot to form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer along a c-plane in the ingot, thus forming the separation start point. First the laser beam is scanned from a scanning start point to a scanning end point on the ingot. Then the laser beam is scanned from the scanning end point to the scanning start point. The first and second steps are alternately repeated to separate the cracks from the modified layer. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step ...

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Номер записи: 76
11-07-2019 дата публикации

METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE

Номер: US20190214301A1
Автор: Grivna Gordon M.
Принадлежит: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer. 1. A method of forming an electronic device comprising:providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed atop the second major surface, and wherein the layer of material is placed onto a first carrier substrate comprising a first adhesive layer;singulating the wafer through the spaces to form singulation lines;placing a second carrier substrate comprising a second adhesive layer onto the wafer such that the second adhesive layer faces the first carrier substrate and the wafer is interposed between the first carrier substrate and the second carrier substrate;moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines.2. The method of claim 1 , wherein:the second adhesive layer comprises an adhesive strength that is less than that of the first adhesive layer; ...

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Номер записи: 77
09-07-2020 дата публикации

Device and Method for Applying Pressure to Stress-Producing Layers for Improved Guidance of a Separation Crack

Номер: US20200215648A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf, Swoboda Marko
Принадлежит:

The present invention relates to a method, according to claim , for separating at least one solid body layer (), particularly a solid body disk, from a donor substrate (). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (); producing or arranging a stress-producing layer () on a particularly flat surface () of the donor substrate () which axially defines the donor substrate (); pressing at least one pressure application element () of a pressure application device () onto at least one pre-determined portion of the stress-producing layer (), in order to press the stress-producing layer () onto the surface (); separating the solid body layer () from the donor substrate () by thermally applying the stress-producing layer (), thereby producing mechanical stress in the donor substrate (), the mechanical stress creating a crack for separating a solid body layer (), and the pressure application element () being pressed onto the stress-producing layer () during the thermal application of the stress-producing layer (). 115-. (canceled)16. A method of separating a solid-state slice from a donor substrate , the method comprising:providing the donor substrate;generating or disposing a stress generation layer on a surface of the donor substrate and that axially bounds the donor substrate;pressing at least one pressurizing element of a pressurizing device onto at least one predetermined proportion of the stress generation layer for pressing the stress generation layer onto the surface;separating the solid-state slice from the donor substrate by subjecting the stress generation layer to thermal stress which generates mechanical stresses in the donor substrate and gives rise to a crack for separation of the solid-state slice,wherein the at least one pressurizing element is pressed onto the stress generation layer during the subjecting of the stress generation layer to the thermal stress.17. The method of claim 16 , ...

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Номер записи: 78
16-07-2020 дата публикации

WAFER AND WAFER PRODUCING METHOD

Номер: US20200223015A1
Автор: SEKIYA Kazuma
Принадлежит:

A wafer producing method includes a peel-off layer forming step of applying a laser beam of a wavelength passing through a hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot to form a peel-off layer, a production history forming step of applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam positioned inside the wafer at a position corresponding to each of a plurality of devices to be formed on a front surface of the wafer to form a production history, and a wafer peeling step of peeling off the wafer from the hexagonal single crystal ingot. 1. A wafer produced from a hexagonal single crystal ingot ,wherein a production history is formed by applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam positioned inside the wafer at a position corresponding to each of a plurality of devices to be formed on a front surface of the wafer.2. The wafer according to claim 1 ,wherein the hexagonal single crystal ingot is a hexagonal single crystal silicon carbide ingot.3. The wafer according to claim 1 ,wherein the production history is selected from the group consisting of American Standard Code for Information Interchange, a two dimensional barcode, a character, and Morse code.4. A wafer producing method of producing a wafer from a hexagonal single crystal ingot claim 1 , the method comprising:a peel-off layer forming step of applying a laser beam of a wavelength passing through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot to form a peel-off layer;a production history forming step of applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam ...

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Номер записи: 79
25-07-2019 дата публикации

WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

Номер: US20190228980A1
Автор: Hirata Kazuya, YAMAMOTO RYOHEI
Принадлежит:

A wafer producing method of producing a wafer from a hexagonal single crystal ingot, the method including positioning a focal point of a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot and applying the laser beam to the hexagonal single crystal ingot to form a separation layer, positioning an ultrasonic wave generating unit so as to face the wafer to be produced with a layer of water interposed therebetween and generating an ultrasonic wave through the layer of water to break down the separation layer, and detecting separation of the wafer to be produced from the hexagonal single crystal ingot according to change in sound. 1. A wafer producing method of producing a wafer from a hexagonal single crystal ingot , the method comprising:a separation layer forming step of positioning a focal point of a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot and applying the laser beam to the hexagonal single crystal ingot to form a separation layer;an ultrasonic wave generating step of positioning an ultrasonic wave generating unit so as to face the wafer to be produced with a layer of water interposed therebetween and generating an ultrasonic wave through the layer of water to break down the separation layer; anda separation detecting step of detecting separation of the wafer to be produced from the hexagonal single crystal ingot according to change in sound.2. The wafer producing method according to claim 1 , whereinin the separation detecting step, a microphone collects sound, and when a frequency of the collected sound an amplitude of which becomes a peak reaches a predetermined value, it is detected that the wafer has been separated.3. The ...

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Номер записи: 80
23-08-2018 дата публикации

CUTTING BLADE AND CUTTING APPARATUS

Номер: US20180236691A1
Автор: Hayashi Takeshi, HIRAIWA Suguru, Kobayashi Tomoatsu, Yamamoto Kazuhiro
Принадлежит:

Disclosed herein is an electroformed cutting blade having a cutting edge containing super abrasive grains. The cutting edge further contains filler particles formed of silicon-based organic material. 1. An electroformed cutting blade having a cutting edge containing super abrasive grains , wherein said cutting edge further contains filler particles formed of silicone-based organic material.2. The electroformed cutting blade according to claim 1 , wherein the content of said filler particles in said cutting edge is set in the range of 5 vol % to less than 40 vol %.3. The electroformed cutting blade according to claim 1 , wherein the particle size of said filler particles is set in the range of 1 to 10 μm.4. A cutting apparatus comprising:a chuck table for holding a workpiece; andcutting means having a rotatable cutting blade for cutting said workpiece held on said chuck table;said cutting blade being an electroformed cutting blade having a cutting edge containing super abrasive grains, said cutting edge further containing filler particles formed of silicone-based organic material. The present invention relates to a cutting blade for cutting a workpiece such as a semiconductor wafer and also to a cutting apparatus using this cutting blade.A workpiece such as a semiconductor wafer having a plurality of devices such as integrated circuits (ICs) and large-scale integrations (LSIs) formed on the front side is divided into individual device chips by using a cutting apparatus having a rotatable cutting blade (see Japanese Patent Laid-open No. 2009-119559, for example). The plural devices are formed in a plurality of separate regions defined by a plurality of division lines previously set on the front side of the workpiece. The device chips obtained by dividing the workpiece are used in various electronic equipment. In the cutting apparatus, the cutting blade is rotated at a high speed and fed into the workpiece held on a chuck table. Further, the chuck table is fed to ...

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Номер записи: 81
25-08-2016 дата публикации

WAFER DIVIDER AND WAFER DIVISION METHOD

Номер: US20160247723A1
Автор: Kirihara Naotoshi
Принадлежит:

A divider which divides a wafer having a division start points formed along the scheduled divisions into a plurality of device chips. The divider includes a placement table on which a wafer is placed, and division unit adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points. The placement table includes: a plurality of spherical bodies having the same diameter; a container that accommodates the plurality of spherical bodies in close contact with each other; and a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other. 1. A wafer divider comprising:a placement table on which a wafer is placed, the wafer having a device formed in each of areas partitioned by scheduled division lines, with division start points formed along the scheduled division lines; anddivision means adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points, a plurality of spherical bodies having same diameter,', 'a container that accommodates the plurality of spherical bodies in close contact with each other, and', 'a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other,, 'wherein the placement table includes'} pressing means adapted to press the wafer placed on the placement surface toward the placement surface,', 'elevating means adapted to raise or lower the pressing means, and', 'parallel movement means adapted to move the pressing means and the placement table relatively parallel along the placement surface,, 'the division means includes'}wherein the wafer on the placement table is divided into individual device chips by pressing the wafer with the pressing means.2. A wafer division method of dividing a wafer , having division start points formed ...

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Номер записи: 82
01-08-2019 дата публикации

LASER PROCESSING METHOD AND DEVICE

Номер: US20190232422A1
Автор: ATSUMI Kazuhiro, Fukumitsu Kenshi, FUKUYO Fumitsugu, Kuno Koji, KUSUNOKI Masayoshi, Suzuki Tatsuya
Принадлежит: HAMAMATSU PHOTONICS K.K.

A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. 17-. (canceled)8. A laser processing apparatus for cutting a semiconductor substrate with a first laser beam while converging the first laser beam , and forming a modified region within the substrate along a horizontal cutting line in the substrate , the apparatus comprising:a lens for converging the first laser beam while the first laser beam is irradiating the substrate such that a converging point is positioned within the substrate;moving means for moving the substrate and the lens relative to each other along a main surface of the substrate;a holder for holding the lens such that the lens is capable of freely expanding and retracting in a vertical direction with respect to the main surface; andcontrol means for controlling respective behaviors of the moving means and the holder;wherein the control means causes the holder to hold the lens at an initial position with respect to the main surface of the substrate in the vertical direction, the initial position being set so that the converging point is located at a predetermined position within the substrate;wherein, while the first laser beam is irradiating the substrate, the control means prohibits movement of the lens from the initial position in the vertical direction by outputting an auto-focus off instruction signal prohibiting expansion/contraction of an actuator of the lens, and the control means controls the moving means so as to move the substrate and the lens relative to each other along the main surface, thereby forming an initial portion of the modified region in one end part of the cutting line; andwherein, while the first laser beam is irradiating the substrate, and after forming the initial part of the modified region in the one end part of the cutting line, the control means controls the holder so as to ...

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Номер записи: 83
30-08-2018 дата публикации

METHOD FOR THE MATERIAL-SAVING PRODUCTION OF WAFERS AND PROCESSING OF WAFERS

Номер: US20180243944A1
Автор: Drescher Wolfram, Richter Jan, SCHILLING Franz
Принадлежит:

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate () for removing a solid layer (), in particular a wafer; producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course; providing a carrier substrate () for holding the solid layer (); bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer () on the carrier substrate (); thermally loading the stress-producing layer () in order to produce stresses in the donor substrate (), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer () from the donor substrate () such that the solid layer () is removed together with the bonded carrier substrate (). 115.-. (canceled)161. A method for producing a multi-layer assembly () , at least comprising the steps of:{'b': 2', '4, 'providing a donor substrate () for removing a solid layer (), in particular a wafer;'}{'b': 12', '10', '2, 'producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course;'}{'b': 6', '4, 'providing a carrier substrate () for holding the solid layer ();'}{'b': 6', '2', '8', '6', '4, 'bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed;'}{'b': 16', '6, 'arranging or producing a stress-producing layer () on the carrier substrate ();'}{'b': 16', '2', '4', '2', ' ...

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Номер записи: 84
01-08-2019 дата публикации

Combined wafer production method with laser treatment and temperature-induced stresses

Номер: US20190237359A1
Автор: BEYER Christian, Drescher Wolfram, Richter Jan
Принадлежит:

A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body. 1. A method for the production of layers of solid material comprising:providing a solid body for the separation of at least one layer of solid material, the solid body having a first level surface portion and a second level surface portion, wherein the second level surface is part of the layer of solid material, wherein the layer of solid material is thinner than the remaining part of the solid body, wherein the first level surface and the second level surface are opposing main surfaces of said solid material;then generating defects by means of laser beams of multiphoton excitation caused by at least one laser acting in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, the laser beams penetrating into the solid body via the second level surface portion;then providing a receiving layer for holding the layer of solid material on the solid body, the receiving layer being disposed on the second level surface portion and the receiving layer being in the form of a polymer layer;then subjecting the receiving layer to temperature conditions in order to generate mechanical stresses in the solid body, including cooling of the receiving layer to a ...

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Номер записи: 85
01-09-2016 дата публикации

Combined wafer production method with laser treatment and temperature-induced stresses

Номер: US20160254232A1
Автор: Christian Beyer, Jan Richter, Wolfram Drescher
Принадлежит: Silectra GmbH

The present invention relates to a method for the production of layers of solid material. The method according to the invention comprises at the very least the steps of providing a solid body ( 2 ) for the separation of at least one layer of solid material ( 4 ), generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer ( 10 ) disposed on the solid body ( 2 ) in order to generate, in particular mechanically, stresses in the solid body ( 2 ), due to the stresses a crack propagating in the solid body ( 2 ) along the detachment plane ( 8 ), which crack separates the layer of solid material ( 4 ) from the solid body ( 2 ).

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Номер записи: 86
31-08-2017 дата публикации

METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE

Номер: US20170247813A1
Автор: Yoshida Takehiro
Принадлежит: Sumitomo Chemical Company, Limited

There is provided a method for manufacturing a group III nitride substrate, including: preparing a plurality of seed crystal substrates formed into shapes that can be arranged with side surfaces opposed to each other; bonding the plurality of seed crystal substrates on a base material by an adhesive agent in an appearance that the seed crystal substrates are arranged with the side surfaces opposed to each other; growing a group III nitride crystals above main surfaces of the plurality of seed crystal substrates, so that crystals grown on each main surface are integrally combined each other; and obtaining a group III nitride substrate formed of the group III nitride crystal. 1. A method for manufacturing a group III nitride substrate , comprising:preparing a plurality of seed crystal substrates formed into shapes that can be arranged with side surfaces opposed to each other;bonding the plurality of seed crystal substrates on a base material by an adhesive agent in an appearance that the seed crystal substrates are arranged with the side surfaces opposed to each other;growing a group III nitride crystals above main surfaces of the plurality of seed crystal substrates, so that crystals grown on each main surface are integrally combined each other; andobtaining a group III nitride substrate formed of the group III nitride crystal.2. The method for manufacturing a group III nitride substrate according to claim 1 , wherein a material with a linear expansion coefficient in a direction parallel to a main surface claim 1 , being equivalent to or smaller than those of the seed crystal substrate and the group III nitride crystal claim 1 , is selected as a material of the base material.3. The method for manufacturing a group III nitride substrate according to claim 1 , wherein the seed crystal substrate and the group III nitride crystal are formed by a group III nitride represented by a general formula AlInGaN (0≦x≦1 claim 1 ,0≦y≦1 claim 1 ,0≦x+y≦1).4. The method for ...

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Номер записи: 87
08-09-2016 дата публикации

Separating a wafer of light emitting devices

Номер: US20160260865A1
Автор: Frank Lili WEI, Rao S. Peddada
Принадлежит: Koninklijke Philips NV

Embodiments of the invention are directed to a method of separating a wafer of light emitting devices. The method includes scribing a first groove on a dicing street on the wafer and checking the alignment of the wafer using a location of the first groove relative to a feature on the wafer. After checking the alignment, a second groove is scribed on the dicing street.

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Номер записи: 88
30-07-2020 дата публикации

Automated transfer and drying tool for process chamber

Номер: US20200243393A1
Автор: Hsu-Shui Liu, Jiun-Rong Pai, Shou-Wen Kuo, Tsung-Sheng Kuo, Yang-Ann Chu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

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Номер записи: 89
14-10-2021 дата публикации

WAFER FORMING METHOD

Номер: US20210316476A1
Автор: Nomaru Keiji
Принадлежит:

A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer. 1. A wafer forming method for forming a wafer from a semiconductor ingot having an upper surface , a lower surface , and a side surface , the wafer forming method comprising:a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through the semiconductor ingot to the semiconductor ingot, with a focal point of the laser beam positioned inside from the side surface at a position corresponding to a thickness of a wafer to be formed, to form a modified layer over a whole circumference of the side surface or in an arcuate shape;a peeling-off layer forming step of exerting an external force from the upper surface of the semiconductor ingot and concentrating a stress on a crack extending from the modified layer to the inside to cause the crack to develop from the side surface side toward the inside, thereby forming a peeling-off layer; anda wafer forming step of peeling off the wafer to be formed, from the semiconductor ingot, with the peeling-off layer as a start point, to form the wafer.2. The wafer forming method according to claim 1 , wherein claim 1 , in the peeling-off layer forming step claim 1 , the external force exerted from ...

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Номер записи: 90
13-08-2020 дата публикации

Production Facility for Separating Wafers from Donor Substrates

Номер: US20200254650A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf, Swoboda Marko, Ullrich Albrecht
Принадлежит:

The invention relates to a production facility () for detaching wafers () from donor substrates (). According to the invention, the production facility comprises at least one analysis device () for determining at least one individual property, particularly the doping, of the respective donor substrate (), a data device () for producing donor substrate process data for individual donor substrates (), wherein the donor substrate process data comprise analysis data of the analysis device (), and the analysis data describe at least the individual property of the donor substrate (), a laser device () for producing modifications () inside the donor substrate () in order to form a region of detachment () inside the respective donor substrate (), wherein the laser device () can be operated according to the donor substrate process data of a concrete donor substrate () for the machining of the concrete donor substrate (), and a detachment device () for producing mechanical voltages inside the respective donor substrate () for triggering and/or guiding a crack for separating respectively at least one wafer () from a donor substrate (). 115-. (canceled)16. A production facility for separating wafers from donor substrates , the production facility comprising:an analysis device configured to determine at least one individual property of a respective donor substrate, the at least one individual property comprising doping and/or crystal lattice dislocations of the respective donor substrate;a data device configured to generate donor substrate process data for the respective donor substrate, the donor substrate process data comprising analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate;a laser device configured to generate modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor ...

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Номер записи: 91
04-11-2021 дата публикации

Production method of wafer

Номер: US20210339428A1
Автор: Xiaoming Qiu
Принадлежит: Disco Corp

A production method of a wafer includes a wafer production step in which ultrasonic water is ejected against an end face of an ingot with cleavage layers created therein, thereby severing the wafer from a rest of the ingot to produce the wafer.

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Номер записи: 92
21-09-2017 дата публикации

Substrate dividing method

Номер: US20170271210A1
Автор: Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama, Yoshimaro Fujii
Принадлежит: Hamamatsu Photonics KK

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1 , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

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Номер записи: 93
29-09-2016 дата публикации

BRITTLE PLATE PROCESSING METHOD AND BRITTLE PLATE PROCESSING APPARATUS

Номер: US20160280578A1
Автор: ENDO Mitsuhiko, ISHIBASHI Toshiyuki, KASAJIMA Masashi, Yamamoto Takashi
Принадлежит: Asahi Glass Company, Limited

A brittle plate processing method includes having a first portion of a brittle plate supported flat on a flat part of a support member that supports a first surface of the brittle plate, pressing a cutter against a second surface of the brittle plate opposite to the first surface, and forming a scribe line in the second surface of the brittle plate by moving the cutter and the support member relative to each other. In pressing the cutter, the cutter is pressed to a predetermined position on a second portion of the brittle plate other than the first portion. When the cutter is pressed to the predetermined position on the second portion of the brittle plate, the shape of the brittle plate due to bending deformation is defined by a defining part of the support member. 1. A brittle plate processing method , comprising:having a first portion of a brittle plate supported flat on a flat part of a support member that supports a first surface of the brittle plate;pressing a cutter against a second surface of the brittle plate opposite to the first surface, the cutter being pressed to a predetermined position on a second portion of the brittle plate other than the first portion; andforming a scribe line in the second surface of the brittle plate by moving the cutter and the support member relative to each other,wherein, when the cutter is pressed to the predetermined position on the second portion of the brittle plate, a shape of the brittle plate due to bending deformation is defined by a defining part of the support member.2. The brittle plate processing method as claimed in claim 1 , whereinthe first surface of the brittle plate is not supported by a defining surface of the defining part before the cutter is pressed, and is supported by the defining surface when the cutter is pressed, andthe shape of the brittle plate due to the bending deformation is defined by a shape of the defining surface.3. The brittle plate processing method as claimed in claim 2 , wherein an ...

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Номер записи: 94
06-10-2016 дата публикации

WAFER PRODUCING METHOD

Номер: US20160288251A1
Автор: Hirata Kazuya, Nishino Yoko, Yoshino Tomoki
Принадлежит:

A wafer is produced from an ingot having an end surface. The method includes an end surface measuring step of measuring undulation present on the end surface, and a separation plane forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the end surface to thereby form a separation plane containing a modified layer and cracks extending from the modified layer. The height of an objective lens for forming the focal point of the laser beam is controlled so that the focal point is set in the same plane to form the separation plane, according to the numerical aperture NA of the lens, the refractive index N of the ingot, and the undulation present on the end surface. 1. A wafer producing method for producing a wafer from an ingot having an end surface , the wafer producing method comprising:an end surface measuring step of measuring undulation present on the end surface of the ingot;a separation plane forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the end surface, which depth corresponds to a thickness of the wafer to be produced, after performing the end surface measuring step, and next applying the laser beam to the end surface of the ingot as relatively moving the focal point and the ingot to thereby form a separation plane containing a modified layer and cracks extending from the modified layer; anda wafer separating step of separating a platelike member having a thickness corresponding to the thickness of the wafer from the ingot at the separation plane after performing the separation plane forming step, thus producing the wafer from the ingot;wherein in the separation plane forming step, a height of an objective lens for forming the focal point of the laser beam is controlled so that the focal point ...

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Номер записи: 95
12-10-2017 дата публикации

WAFER PRODUCING METHOD

Номер: US20170291254A1
Автор: Hirata Kazuya
Принадлежит:

An SiC wafer is produced from an SiC ingot by a method that includes a first modified layer forming step and a second modified layer forming step. In the first step, a first laser beam having a first power forms a plurality of discrete first modified layers at a first depth inside the ingot. In the second step, a second laser beam having a second power greater than the first power is applied to the ingot with the second laser beam focused at a depth greater than the first depth. A beam spot of the second laser beam overlaps any one of the plural first modified layers, thereby continuously forming a plurality of second modified layers connected in a line at the first depth. Cracks are formed on both sides of the line of the plural second modified layers so as to extend along a c-plane in the ingot. 1a first modified layer forming step of setting the focal point of a first laser beam having a transmission wavelength to said SiC ingot and a first power, inside said SiC ingot at a first depth from said first surface, said first depth corresponding to the thickness of said SiC wafer to be produced, and next applying said first laser beam to said first surface as relatively moving the focal point of said first laser beam in a first direction perpendicular to a second direction where said c-axis is inclined by an off angle with respect to a normal to said first surface and said off angle is formed between said first surface and said c-plane, thereby discretely forming a plurality of first modified layers parallel to said first surface at said first depth, said first modified layers being spaced from each other in said first direction;a first indexing step of relatively moving the focal point of said first laser beam in said second direction to thereby index the focal point of said first laser beam by a predetermined amount;a second modified layer forming step of setting the focal point of a second laser beam having a transmission wavelength to said SiC ingot and a second ...

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Номер записи: 96
12-10-2017 дата публикации

WAFER PRODUCING METHOD AND PROCESSING FEED DIRECTION DETECTING METHOD

Номер: US20170291255A1
Автор: Hirata Kazuya
Принадлежит:

A wafer is produced from an ingot by confirming whether or not an inclined c-axis of the ingot and a second orientation flat of the ingot are perpendicular to each other, and detecting a processing feed direction perpendicular to the direction in which the c-axis is inclined. The method includes performing sampling irradiation of the ingot with a laser beam, along a direction parallel to the second orientation flat and a plurality of directions inclined clockwise and counterclockwise by respective predetermined angles from the second orientation flat, thereby forming a plurality of sampled reduced strength areas in the ingot; measuring the number of nodes which exist per unit length on each of the sampled reduced strength areas, and determining a direction in which the sampled reduced strength area where the measured number of nodes is zero extends as a processing feed direction. 1. A wafer producing method of producing a wafer from a cylindrical single-crystal SiC ingot having a cylindrical peripheral surface including a first orientation flat and a second orientation flat shorter than said first orientation flat and perpendicular to said first orientation flat , and a circular upper surface , said cylindrical single-crystal SiC ingot having a c-axis inclined from a vertical axis perpendicular to said circular upper surface toward said second orientation flat and an off-angle formed between a c-plane perpendicular to said c-axis and said upper surface , said wafer producing method comprising:a processing feed direction detecting step of confirming whether or not a direction in which said c-axis is inclined and said second orientation flat are perpendicular to each other, and detecting a processing feed direction perpendicular to the direction in which said c-axis is inclined;a reduced strength area forming step of positioning the focused point of a laser beam in said cylindrical single-crystal SiC ingot at a depth from said circular upper surface, which depth ...

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Номер записи: 97
11-10-2018 дата публикации

SPLITTING OF A SOLID USING CONVERSION OF MATERIAL

Номер: US20180290232A1
Автор: BEYER Christian, Richter Jan, Rieske Ralf
Принадлежит:

The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. According to the invention, the method comprises at least the steps of: providing a solid which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; the method is characterized in that a number of modifications is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modification, said fissures in the region of the modifications predefining the detachment zone or a plurality of partial detachment zones. 1. A method for separating at least one solid portion from a solid , wherein the method comprises at least the steps:modifying the crystal lattice of the solid by means of a laser,wherein a plurality of modifications are produced in the crystal lattice,wherein the crystal lattice fissures as a result of the modifications in the regions surrounding the modifications at least in respectively one portion,wherein a detachment zone is predefined by the fissures in the region of the modifications,wherein the laser beam penetrates via a polished surface into the at least partially transparent solid,wherein the fissures are subcritical and propagate less than 5 mm in the solid,wherein the subcritical fissures propagate for the most part in a plane parallel to the ...

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Номер записи: 98
20-10-2016 дата публикации

Capacitive Clamping Process for Cleaving Work Pieces Using Crack Propagation

Номер: US20160303764A1
Автор: Andrei Iancu, Andrew BOLLMAN, Philip Van Stockum
Принадлежит: Halo Industries Inc

Controllable cleavage of a work piece is achieved through the use of capacitive clamps and application of a large tensile force. Capacitive clamps are used to secure the ends of a work piece with strong electrostatic forces. The capacitive clamps secure the ends of the work piece by creating electrostatic forces like those experienced by the plates in a parallel plate capacitor. After introduction of a crack along a side surface of the work piece, the application of a tensile force along the central axis of the work piece causes the crack to rapidly propagate and cleave the work piece into two or more pieces.

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Номер записи: 99
25-10-2018 дата публикации

Device and Method for Cleaving a Liquid Sample

Номер: US20180306685A1
Автор: BOGUSLAVSKY Dimitry, KOVLER Mark
Принадлежит: IB Labs, Inc.

An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber. 1. An apparatus for cleaving a liquid sample , comprising:a load lock chamber containing a cleaving module, the cleaving module being configured to cleave a crystalline sample holder and the liquid sample, wherein the liquid sample (i) includes one or more materials that are in a liquid phase at ambient temperatures and (ii) is cleavable by the cleaving module when in a solid phase on the sample holder;a cryo-cooler configured to cool and/or maintain a temperature of the sample holder and the sample below a melting point of each of the one or more materials that are in the liquid phase at ambient temperatures;a vacuum chamber configured to receive the cleaving module from the load lock chamber; anda gate valve between the load lock chamber and the vacuum chamber, the gate valve having at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.2. The apparatus of claim 1 , wherein the cleaving module comprising a ...

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Номер записи: 100