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10-07-2005 дата публикации

ТЕХНОЛОГИЧЕСКИЙ УЧАСТОК ДЛЯ ПОЛУЧЕНИЯ ХЛОРИДА ОЛОВА (IV)

Номер: RU0000046493U1
Автор: Кудрявский Ю.П., Пономарев В.Г.
Принадлежит: ЗАО "ПРОМХИМПЕРМЬ"

Технологический участок для получения хлорида олова (IV), включающий хлорирующую установку, снабженную бункером для загрузки металлического олова, систему подачи хлора в зону реакции и устройство для вывода целевого продукта, отличающийся тем, что хлорирующая установка дополнительно имеет водоохлаждаемую рубашку, внутри установки имеется ложное днище с отверстиями, на ложном днище помещена пористая керамическая вставка, устойчивая к воздействию газообразного хлора, система подачи газообразного хлора включает в себя сорбционно-очистительную колонку с силикагелевым поглотителем, выход из колонки хлора, очищенного от примесей, направлен через регулирующее устройство и верхний патрубок хлорирующей установки в хлоропровод, проходящий по всей высоте хлорирующей установки и оканчивающийся газодиспергатором, доходящим до днища хлорирующей установки, устройство для вывода целевого продукта представляет собой боковой сливной патрубок, расположенный над днищем хлорирующей установки, снабженный запорно-регулирующей арматурой и имеющий соединение с водоохлаждаемым сборником целевого продукта, выход из которого через дозатор направлен в фасовочную машину. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 46 493 (13) U1 (51) МПК C01G 19/08 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005104573/22 , 18.02.2005 (24) Дата начала отсчета срока действия патента: 18.02.2005 (45) Опубликовано: 10.07.2005 (72) Автор(ы): Пономарев В.Г. (RU) , Кудрявский Ю.П. (RU) Адрес для переписки: 618400, Пермская обл., г. Березники, ул. Деменева, 7, кв.3, Ю.П Кудрявскому U 1 4 6 4 9 3 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Технологический участок для получения хлорида олова (IV), включающий хлорирующую установку, снабженную бункером для загрузки металлического олова, систему подачи хлора в зону реакции и устройство для вывода целевого продукта, отличающийся тем, что хлорирующая установка дополнительно имеет ...

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Номер записи: 1
27-08-2005 дата публикации

ТЕХНОЛОГИЧЕСКАЯ ЛИНИЯ ДЛЯ ПОЛУЧЕНИЯ ТЕТРАХЛОРИДА ОЛОВА

Номер: RU0000047345U1
Автор: Балдуев М.Е., Кудрявский Ю.П., Пономарев В.Г., Римаренко В.С.
Принадлежит: ЗАО "ПРОМХИМПЕРМЬ"

Технологическая линия для получения тетрахлорида олова, включающая реактор для хлорирования металлического олова, снабженный патрубками для подвода газообразного хлора, загрузки металлического олова в реактор и вывода целевого продукта из зоны реакции, отличающийся тем, что реактор имеет терморегулируемую, охлаждающую рубашку, патрубок для загрузки металлического олова имеет соединение через герметичное запорно-регулирующее устройство с бункером-дозатором металлического олова, перед реактором дополнительно установлена сорбционно-очистительная колонна, заполненная предварительно прокаленным силикагелем, выход газообразного хлора из колонны направлен через расходомер и патрубок, находящийся на верхней крышке реактора в хлоропровод, проходящий внутри реактора на 80-90% от его высоты, патрубок вывода целевого продукта имеет соединения через запорную арматуру с последовательно установленными сборниками готового продукта и фасовочной машиной. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 47 345 (13) U1 (51) МПК C01G 19/08 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005100642/22 , 11.01.2005 (24) Дата начала отсчета срока действия патента: 11.01.2005 (45) Опубликовано: 27.08.2005 (73) Патентообладатель(и): ЗАО "ПРОМХИМПЕРМЬ" (RU) U 1 4 7 3 4 5 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Технологическая линия для получения тетрахлорида олова, включающая реактор для хлорирования металлического олова, снабженный патрубками для подвода газообразного хлора, загрузки металлического олова в реактор и вывода целевого продукта из зоны реакции, отличающийся тем, что реактор имеет терморегулируемую, охлаждающую рубашку, патрубок для загрузки металлического олова имеет соединение через герметичное запорно-регулирующее устройство с бункером-дозатором металлического олова, перед реактором дополнительно установлена сорбционно-очистительная колонна, заполненная предварительно прокаленным ...

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Номер записи: 2
27-08-2005 дата публикации

АППАРАТУРНО-ТЕХНОЛОГИЧЕСКИЙ КОМПЛЕКС ДЛЯ ПРОИЗВОДСТВА ТЕТРАХЛОРИДА ОЛОВА (IV)

Номер: RU0000047346U1
Автор: Кудрявский Ю.П., Пономарев В.Г.
Принадлежит: ЗАО "ПРОМХИМПЕРМЬ"

Аппаратурно-технологический комплекс для производства тетрахлорида олова, включающий охлаждаемый хлоратор, имеющий соединение с системой подачи хлора и устройство для очистки хлора от примесей, патрубок отвода тетрахлорида олова, соединенный через охлаждаемую емкость со сборником готового продукта, отличающийся тем, что устройство для очистки хлора от примесей выполнено в форме сорбционной колонки, соединенной через запорно-регулирующую арматуру с хлоропроводом и диспергатором хлора, размещенным в нижней части хлоратора под дополнительно установленный внутри хлоратора, перфорированной решеткой, на которой размещается загрузка исходного металлического олова, на крышке хлоратора дополнительно установлены патрубок, соединенный с бункером-дозатором металлического олова и патрубок для отвода отходящих газов, соединенный с циклоном, орошаемым раствором гидроксида натрия из циркуляционного бака, который имеет соединение с реактором для приготовления и дозировки раствора гидроксида натрия и баком-сборником щелочного раствора гипохлорита натрия, в нижней части хлоратора установлен боковой сливной патрубок, соединенный через запорную арматуру с водоохлаждаемым сборником целевого продукта, выход из которого направлен в затарочную машину. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 47 346 (13) U1 (51) МПК C01G 19/08 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005104675/22 , 21.02.2005 (24) Дата начала отсчета срока действия патента: 21.02.2005 (45) Опубликовано: 27.08.2005 (72) Автор(ы): Пономарев В.Г. (RU) , Кудрявский Ю.П. (RU) Адрес для переписки: 618400, Пермская обл., г. Березники, ул. Деменева, 7, кв.3, Ю.П. Кудрявскому Ñòðàíèöà: 1 U 1 4 7 3 4 6 R U U 1 Формула полезной модели Аппаратурно-технологический комплекс для производства тетрахлорида олова, включающий охлаждаемый хлоратор, имеющий соединение с системой подачи хлора и устройство для очистки хлора от примесей, патрубок ...

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Номер записи: 3
10-09-2005 дата публикации

УСТАНОВКА ДЛЯ ПРОИЗВОДСТВА ХЛОРИДА ОЛОВА (IV)

Номер: RU0000047872U1
Автор: Кудрявский Ю.П., Пономарев В.Г., Тиунов А.В.
Принадлежит: Закрытое акционерное общество "ПРОМХИМПЕРМЬ"

Установка для производства хлорида олова (IV), включающая реактор-хлоратор, снабженный патрубком для ввода газообразного хлора и патрубком вывода целевого продукта из зоны реакции, отличающаяся тем, что реактор-хлоратор дополнительно снабжен водоохлаждаемой "рубашкой", патрубок вывода целевого продукта расположен в нижней зоне реактора, на верхней крышке реактора-хлоратора имеется патрубок, соединенный с загрузочным устройством металлического олова, перед реактором-хлоратором дополнительно установлена цилиндрическая сорбционная колонна, заполненная силикагелем, а выходной патрубок сорбционной колонны имеет соединение с патрубком ввода газообразного хлора в реактор-хлоратор. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 47 872 (13) U1 (51) МПК C01G 19/08 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2004138421/22 , 27.12.2004 (24) Дата начала отсчета срока действия патента: 27.12.2004 (45) Опубликовано: 10.09.2005 (73) Патентообладатель(и): Закрытое акционерное общество "ПРОМХИМПЕРМЬ" (RU) U 1 4 7 8 7 2 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Установка для производства хлорида олова (IV), включающая реактор-хлоратор, снабженный патрубком для ввода газообразного хлора и патрубком вывода целевого продукта из зоны реакции, отличающаяся тем, что реактор-хлоратор дополнительно снабжен водоохлаждаемой "рубашкой", патрубок вывода целевого продукта расположен в нижней зоне реактора, на верхней крышке реактора-хлоратора имеется патрубок, соединенный с загрузочным устройством металлического олова, перед реактором-хлоратором дополнительно установлена цилиндрическая сорбционная колонна, заполненная силикагелем, а выходной патрубок сорбционной колонны имеет соединение с патрубком ввода газообразного хлора в реактор-хлоратор. 4 7 8 7 2 (54) УСТАНОВКА ДЛЯ ПРОИЗВОДСТВА ХЛОРИДА ОЛОВА (IV) R U Адрес для переписки: 618400, Пермская обл., г. Березники, ул. Деменева, 7, кв.3, Ю.П. Кудрявскому ...

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Номер записи: 4
10-09-2005 дата публикации

УСТАНОВКА РЕГЕНЕРАЦИИ ОТРАБОТАННОГО МЕРКАПТИДНОГО ЩЕЛОЧНОГО РАСТВОРА ПРОЦЕССА ДЕМЕРКАПТАНИЗАЦИИ УГЛЕВОДОРОДНОГО СЫРЬЯ

Номер: RU0000047873U1
Автор: Белослудцев А.П., Бердников А.И., Иванов С.И., Каверин А.И., Коломиец В.И., Кузин А.Ф., Лободенков А.К., Михайленко С.А., Молчанов С.А., Сербиненко С.Л., Сироткин Н.С., Столыпин В.И., Трынов А.М., Чехонин М.Ф., Шушпанов А.Т.
Принадлежит: Общество с ограниченной ответственностью "Оренбурггазпром" (ООО "Оренбурггазпром")

Установка регенерации отработанного меркаптидного щелочного раствора процесса демеркаптанизации углеводородного сырья, включающая колонну-регенератор, разделительную емкость для раздела фаз, оснащенную уровнемером, и сборник-накопитель, отличающаяся тем, что разделительная емкость снабжена импульсным уровнемером электромагнитного типа. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 47 873 (13) U1 (51) МПК C01G 19/08 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005106404/22 , 09.03.2005 (24) Дата начала отсчета срока действия патента: 09.03.2005 (45) Опубликовано: 10.09.2005 U 1 4 7 8 7 3 R U Формула полезной модели Установка регенерации отработанного меркаптидного щелочного раствора процесса демеркаптанизации углеводородного сырья, включающая колонну-регенератор, разделительную емкость для раздела фаз, оснащенную уровнемером, и сборник-накопитель, отличающаяся тем, что разделительная емкость снабжена импульсным уровнемером электромагнитного типа. Ñòðàíèöà: 1 U 1 (54) УСТАНОВКА РЕГЕНЕРАЦИИ ОТРАБОТАННОГО МЕРКАПТИДНОГО ЩЕЛОЧНОГО РАСТВОРА ПРОЦЕССА ДЕМЕРКАПТАНИЗАЦИИ УГЛЕВОДОРОДНОГО СЫРЬЯ 4 7 8 7 3 (73) Патентообладатель(и): Общество с ограниченной ответственностью "Оренбурггазпром" (ООО "Оренбурггазпром") (RU) R U Адрес для переписки: 460000, г.Оренбург, ул. Пушкинская, 20, ООО "ВолгоУралНИПИгаз", зав. патентным отделом, пат. пов. РФ Б.А. Дронову (72) Автор(ы): Иванов С.И. (RU) , Столыпин В.И. (RU) , Михайленко С.А. (RU), Трынов А.М. (RU), Чехонин М.Ф. (RU) , Белослудцев А.П. (RU) , Молчанов С.А. (RU) , Лободенков А.К. (RU), Шушпанов А.Т. (RU), Сироткин Н.С. (RU) , Сербиненко С.Л. (RU) , Кузин А.Ф. (RU), Бердников А.И. (RU) , Коломиец В.И. (RU), Каверин А.И. (RU) U 1 U 1 4 7 8 7 3 4 7 8 7 3 R U R U Ñòðàíèöà: 2 RU 5 10 15 20 25 30 35 40 45 50 47 873 U1 Полезная модель относится к установкам регенерации отработанного меркаптидного щелочного раствора процесса демеркаптанизации ...

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Номер записи: 5
01-11-2012 дата публикации

Synthesis of Nanoparticles by Means of Ionic Liquids

Номер: US20120275991A1
Автор: Hechun Lin, Michael Veith, Peter William De Oliveira
Принадлежит: Leibniz Institut fuer Neue Materialien Gemeinnuetzige GmbH

A method for producing nanoscale particles by means of ionic liquids produces highly crystalline particles. The ionic liquids can be easily regenerated.

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Номер записи: 6
06-12-2012 дата публикации

One-dimensional metal nanostructures

Номер: US20120308818A1
Автор: HAO LIU, Mei Cai, Ruying Li, Xueliang Sun, Yuqin Zhou
Принадлежит: GM GLOBAL TECHNOLOGY OPERATIONS LLC, University of Western Ontario

Tin powder is heated in a flowing stream of an inert gas, such as argon, containing a small concentration of carbon-containing gas, at a temperature to produce metal vapor. The tin deposits as liquid on a substrate, and reacts with the carbon-containing gas to form carbon nanotubes in the liquid tin. Upon cooling and solidification, a composite of tin nanowires bearing coatings of carbon nanotubes is formed.

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Номер записи: 7
04-04-2013 дата публикации

Microspheres and photoprotective personal care composition comprising same

Номер: US20130084318A1
Автор: Bharath Palanisamy, Sudipta Ghosh Dastidar
Принадлежит: Conopco Inc

The invention relates to photoprotective cosmetic compositions comprising microspheres and a process to prepare them. In particular, the invention is especially effective in protecting the skin against visible solar radiation while ensuring a highly acceptable even skin tone and appearance. The present inventors have developed a microsphere with hollow interior and shell of a material having a specific optical property and specific thickness and coated with another material having a different specific optical property, a combination of which gives the microsphere surprising benefits both in terms of protection from the harmful sun rays while giving a pleasing skin appearance when these microspheres are incorporated in topical compositions.

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Номер записи: 8
11-04-2013 дата публикации

CHIRAL NEMATIC NANOCRYSTALLINE METAL OXIDES

Номер: US20130089492A1
Автор: Hamad Wadood Yasser, MacLachlan Mark John, Shopsowitz Kevin Eric
Принадлежит:

A mesoporous metal oxide materials with a chiral organization; and a method for producing it, in the method a polymerizable metal oxide precursor is condensed inside the pores of chiral nematic mesoporous silica by the so-called “hard templating” method. As a specific example, mesoporous titanium dioxide is formed inside of a chiral nematic silica film templated by nanocrystalline cellulose (NCC). After removing the silica template such as by dissolving the silica in concentrated aqueous base, the resulting product is a mesoporous titania with a high surface area. These mesoporous metal oxide materials with high surface area and chiral nematic structures that lead to photonic properties may be useful for photonic applications as well as enantioselective catalysis, photocatalysis, photovoltaics, UV filters, batteries, and sensors. 1. A mesoporous metal oxide having chirality and crystallinity.2. The mesoporous metal oxide of claim 1 , wherein said oxide is titanium oxide.3. The mesoporous metal oxide of claim 2 , wherein said titanium oxide is anatase titanium oxide.4. The mesoporous metal oxide of claim 1 , wherein said chirality is in a length scale ranging from nanometers to centimetres.5. The mesoporous metal oxide of claim 2 , wherein said chirality is in a length scale ranging from nanometers to centimetres.6. A process for producing a mesoporous metal oxide having chirality claim 2 , comprising: introducing a metal oxide precursor into a mesoporous silica template defining chirality claim 2 , converting said precursor to metal oxide claim 2 , and removing said silica template.7. A process according to claim 6 , wherein said precursor is a precursor of a metal oxide selected from the group consisting of titanium oxide claim 6 , tin dioxide claim 6 , iron oxide claim 6 , tantalum oxide and vanadium oxide.8. A process according to claim 6 , wherein said precursor is a precursor of titanium oxide.9. A process according to claim 6 , wherein said precursor is a ...

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Номер записи: 9
16-05-2013 дата публикации

Indium tin oxide powder, production method therefor, transparent conductive composition, and indium tin hydroxide

Номер: US20130122305A1
Автор: Megumi Narumi, Shinya Shiraishi
Принадлежит: Mitsubishi Materials Corp, Mitsubishi Materials Electronic Chemicals Co Ltd

One aspect of an indium tin oxide powder has a specific surface area of 55 m 2 /g or more, wherein a color tone is from bright yellow to a color of persimmons or a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart. Another aspect of the indium tin oxide powder has a modified surface, wherein a specific surface area is 40 m 2 /g or more, a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart, and a color tone is navy blue (L is 30 or less in a Lab colorimetric system). A method for producing the indium tin oxide powder includes: coprecipitating an indium tin hydroxide by using a tin (Sn 2+ ) compound under conditions in which pH is 4.0 to 9.3, and a temperature of a liquid is 5° C. or higher; and drying and calcining the indium tin hydroxide.

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Номер записи: 10
29-08-2013 дата публикации

Re-Dispersible Metal Oxide Nanoparticles and Method of Making Same

Номер: US20130220178A1
Автор: Alexander Traut, Alexandra Seeber, Bernadette Landschreiber, Bernd Smarsly, Christoph Wiedmann, Claudia Grote, Cornelia RÖGER-GÖPFERT, Georg Garnweitner, Jan Haetge, Roman Zieba, Till von Graberg, Torsten Brezesinski
Принадлежит: Justus Liebig Universitaet Giessen

The current invention relates to a method of making metal oxide nanoparticles comprising the reaction of—at least one metal oxide precursor (P) containing at least one metal (M) with—at least one monofunctional alcohol (A) wherein the hydroxy group is bound to a secondary, tertiary or alpha-unsaturated carbon atom—in the presence of at least one aliphatic compound (F) according to the formula Y 1 —R 1 —X—R 2 —Y 2 , wherein—R 1 and R 2 each are the same or different and independently selected from aliphatic groups with from 1 to 20 carbon atoms, —Y 1 and Y 2 each are the same or different and independently selected from OH, NH 2 and SH, and —X is selected from the group consisting of chemical bond, —O—, —S—, —NR 3 —, and CR 4 R 5 , wherein R 3 , R 4 and R 5 each are the same or different and represent a hydrogen atom or an aliphatic group with from 1 to 20 carbon atoms which optionally carries functional groups selected from OH, NH 2 and SH. This invention also relates to metal oxide nanoparticles, to a method of making dispersions of said nanoparticles and to dispersions containing them.

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Номер записи: 11
26-09-2013 дата публикации

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Номер: US20130248855A1
Автор: Aya Miki, Byung Du Ahn, Gun Hee Kim, Jae Woo Park, Je Hun Lee, Satoshi Yasuno, Shinya Morita, Toshihiro Kugimiya
Принадлежит: Kobe Steel Ltd, Samsung Display Co Ltd

This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

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Номер записи: 12
17-10-2013 дата публикации

METHOD FOR MANUFACTURING INDIUM TIN OXIDE NANOWIRES

Номер: US20130272953A1
Автор: Burns Richard W., Li Wen, Phelps Amanda, Zhou Chaoyin
Принадлежит:

A method for manufacturing indium tin oxide nanowires by preparing a solution that includes an indium-containing species, a tin-containing species and a polymeric material, wherein the solution has a molar ratio of tin to indium in a range from about 5 to about 15 percent, electrospinning fibers using the solution, and heating the fibers to a calcination temperature and maintaining the fibers at the calcination temperature for a predetermined calcination time. 1. An indium tin oxide nanowire manufactured by a method comprising:preparing a precursor aqueous solution comprising a tin-containing specie and an indium-containing specie wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 5 to about 15%;preparing a polymer solution comprising a polymeric material and an organic solvent;mixing the precursor solution with the polymer solution to produce an electrospinning solution or sol-gel wherein together the tin-containing specie and the indium-containing specie are from about 2% to about 15% by weight of the electrospinning solution or sol-gel;electrospinning the electrospinning solution or sol-gel at a relative humidity from about 15 to about 60 percent while irradiating the electrospinning solution or sol-gel with infrared radiation to provide the indium-tin nanowire with a cross-sectional thickness of from about 1 to about 100 micrometers;drying the indium tin oxide nanowire at a drying temperature of about 100° C. to about 200° C. to a moisture content of less than about 20% by weight;heating the indium tin oxide nanowire, at a rate between about 2 and about 20° C. per minute from the drying temperature to a calcination temperature of from about 700° C. to about 1000° C.; and{'sup': '−3', 'maintaining the calcination temperature for a time from two hours to one week wherein the indium tin oxide nanowire has a resistivity of about 10Ω-cm.'}2. The indium tin oxide nanowire according to claim 1 , wherein the molar ratio of the ...

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Номер записи: 13
31-10-2013 дата публикации

METHOD FOR PRODUCING METAL OXIDE-CONTAINING PARTICLES, AND METHOD FOR PRODUCING AGGREGATES OF METAL OXIDE COLLOIDAL PARTICLES

Номер: US20130289133A1
Автор: Doshita Kazuhiro, Furuichi Toshitaka
Принадлежит: NIPPON SHEET GLASS COMPANY, LIMITED

A method for producing particles containing a metal oxide is provided, and the method includes: feeding a metal oxide sol having a pH of 7 or higher and containing metal oxide colloidal particles as dispersoids and water as a dispersion medium, into a liquid containing a solvent having a solubility in 20° C. water of 0.05 g/100 ml or more and having a relative permittivity of 30 or lower (protic solvent) or of 40 or lower (aprotic solvent) at 20° C., and thereby forming aggregates of the metal oxide colloidal particles in the liquid; and subjecting the aggregates to a treatment such as drying and heating, and thereby converting the aggregates into particles that are insoluble in water. By appropriately selecting the solvent, particles can be obtained in the form of flakes, fibers, spheres, and the like. 1. A method for producing particles containing a metal oxide , the method comprising the steps of;feeding a metal oxide sol having a pH of 7 or higher and containing metal oxide colloidal particles as dispersoids and water as a dispersion medium, into a liquid containing a solvent that is a protic solvent having a relative permittivity of 30 or lower at 20° C. and having a solubility in 20° C. water of 0.05 g/100 ml or more, or that is an aprotic solvent having a relative permittivity of 40 or lower at 20° C. and having a solubility in 20° C. water of 0.05 g/100 ml or more, and thereby forming aggregates of the metal oxide colloidal particles in the liquid; andsubjecting the aggregates to at least one treatment selected from drying, heating, and pressurization, to increase a binding force between the metal oxide colloidal particles constituting the aggregates, and thereby converting the aggregates into particles that are insoluble in water.2. The method for producing particles according to claim 1 , wherein the sol is fed into the liquid in the form of droplets.3. The method for producing particles according to claim 1 , wherein the sol is fed into the liquid while ...

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Номер записи: 14
26-12-2013 дата публикации

Chlorine-doped tin-oxide particles and manufacturing method therefor

Номер: US20130344336A1
Автор: Isamu Yashima, Kazuhiko Kato, Kenji Suzuoka, Satoshi Mogi, Yasunori Tabira
Принадлежит: Mitsui Mining and Smelting Co Ltd

A chlorine-doped tin oxide particle exhibits peaks at at least 108±5 cm −1 , 122±5 cm −1 , and 133±5 cm −1 in Raman spectroscopy. The chlorine-doped tin oxide particle preferably has an additional Raman spectral peak at 337±10 cm −1 . The chlorine-doped tin oxide particle preferably has a specific surface area of 10 to 300 m2/g. The chlorine-doped tin oxide particle preferably has an average primary particle size of 3 to 200 nm. The chlorine-doped tin oxide particle is preferably substantially free of oxygen deficiency.

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Номер записи: 15
27-02-2014 дата публикации

METHOD FOR CONTINUOUS PREPARATION OF INDIUM-TIN COPRECIPITATES AND INDIUM-TIN-OXIDE NANOPOWDERS WITH SUBSTANTIALLY HOMOGENEOUS INDIUM/TIN COMPOSITION, CONTROLLABLE SHAPE AND PARTICLE SIZE

Номер: US20140054521A1
Автор: Abraham Sinoj, Bravo-Vasquez Juan-Pablo, Gerein Nathan, Ma Guibin, Mahabadi Hadi K.
Принадлежит: HY-POWER NANO INC.

Disclosed herein are indium-tin-oxide nanoparticles and a method for continuously producing precipitated indium-tin nanoparticles having a particle size range of substantially from about 10 nm to about 200 nm and a substantially consistent ratio of indium to tin in the resultant nanoparticles across the duration of the continuous process, based on the ratio of indium to tin in a seeding solution. The method comprises preparing intermediate indium and tin compounds of the general formula [M(OH)C], where M represents the indium or tin ionic component of indium or tin salts, C represents the cationic component of indium or tin salt(s), x is a number greater than 0 and y=[M*valance−x]/C* valance in the seeding solution. The intermediate compounds are continuously precipitated with a base solution in a reaction vessel initially having a solvent contained therein. The method also provides a means for controlling the shape of the resultant nanoparticles. The resultant indium-tin nanoparticles may be further processed into dispersions. 149-. (canceled)50. A process for preparing an indium-tin-oxide nanopowder having a substantially consistent indium-to-tin ratio , a desired particle size range and desired particle shape comprising:{'sub': x', 'y, 'a) preparing a seeding solution including at least one indium salt, at least one tin salt, at least one solubility modifier, and at least one base in a solvent so as to form intermediate indium compounds and tin compounds having a general formula expressed as [M(OH)C], where M is an indium or tin ion, and C is the cationic part of the at least one indium or the least one tin salt, x is a number greater than 0 and y=[M*valance−x]/C* valance;'}b) adjusting the pH of the seeding solution and the concentration of the solubility modifier so as to solubilize the indium and tin intermediate compounds to near the onset of precipitation wherein the pH of the seeding solution is from about 0 to about 3;c) continuously introducing into a ...

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Номер записи: 16
20-03-2014 дата публикации

METHOD FOR MANUFACTURING TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION, AND TIN (II) OXIDE POWDER MANUFACTURED USING SAID METHOD

Номер: US20140079618A1
Автор: Katase Takuma, Kuba Kanji, Masuda Akihiro
Принадлежит: MITSUBISHI MATERIALS CORPORATION

An object of the present invention is to provide tin(II) oxide powder which has extremely high solubility in an acid or an acidic plating solution, excellent in storage stability in the air and can heighten oxidation-preventive effect of Sn ion in the plating solution. The method for manufacturing tin(II) oxide powder of the present invention comprises Step () of preparing an aqueous acidic solution containing Sn ions, Step () of neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin(II) hydroxide, Step () of dehydrating the prepared slurry to obtain a slurry of tin(II) oxide, Step () of separating the slurry of tin(II) oxide into a solid and a liquid to obtain tin(II) oxide, Step () of treating the obtained tin(II) oxide with an aqueous antioxidant solution, and Step () of vacuum drying the tin(II) oxide treated with the aqueous antioxidant solution. 1. A method for manufacturing tin(II) oxide powder for replenishing a tin component to a tin-alloy plating solution comprising steps of:{'sup': '2+', 'preparing an aqueous acidic solution containing Sn ions;'}neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin(II) hydroxide;dehydrating the prepared slurry to prepare a slurry of tin(II) oxide;separating the slurry of tin(II) oxide into a solid and a liquid to obtain tin(II) oxide;treating the above obtained tin(II) oxide with an aqueous antioxidant solution; andvacuum drying the tin(II) oxide treated with the aqueous antioxidant solution.2. The method for manufacturing tin(II) oxide powder for replenishing a tin component to a tin-alloy plating solution according to claim 1 , wherein the treatment with the aqueous antioxidant solution is carried out by a method of spraying the aqueous antioxidant solution to the tin(II) oxide powder or dipping the tin(II) oxide powder in the aqueous antioxidant solution.3. The method for manufacturing tin(II) oxide powder for ...

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Номер записи: 17
03-04-2014 дата публикации

Fluorine-doped tin-oxide particles and manufacturing method therefor

Номер: US20140093734A1
Автор: Isamu Yashima, Kazuhiko Kato, Kenji Suzuoka, Satoshi Mogi, Yasunori Tabira
Принадлежит: Mitsui Mining and Smelting Co Ltd

Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123±5 cm −1 , 139±5 cm −1 , and 170±5 cm −1 in Raman spectroscopy. The particles preferably have additional Raman spectral peaks at 78±5 cm −1 , 97±5 cm −1 , 109±5 cm −1 , 186±5 cm −1 , and 207±5 cm −1 . The particles preferably have a specific surface area of 10 to 300 m 2 /g.

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Номер записи: 18
07-01-2021 дата публикации

ITO PARTICLES, DISPERSION, PRODUCTION METHOD OF ITO PARTICLES, PRODUCTION METHOD OF DISPERSION, AND PRODUCTION METHOD OF ITO FILM

Номер: US20210002494A1
Автор: KANIE Kiyoshi, MURAMATSU Atsushi, SUZUKI Ryoko
Принадлежит:

Provided are ITO particles having a non-rectangular parallelepiped shape and an aligned crystal orientation inside particles. 1. ITO particles , having a non-rectangular parallelepiped shape and an aligned crystal orientation inside particles , whereina molar ratio of a content amount of Sn to a content amount of In (Sn/In) falls within a range from 3.5 to 24.2. Dispersion comprising the ITO particles according to dispersed in a solvent.3. The dispersion according to claim 2 , wherein the solvent comprises water.4. The dispersion according to claim 2 , wherein the dispersion is substantially prevented from comprising a surfactant.5. The dispersion according to claim 2 , wherein a ratio of a volume of the ITO particles to a volume of the solvent is 40% or less.6. A production method of ITO particles claim 2 , comprising:obtaining ITO particles by causing a reaction at a temperature from 190° C. to 200° C. for 12 hours to 120 hours in a solution containing In salt from 0.09 M to 0.9 M, Sn salt from 0.01 M to 0.2 M, a basic compound, and a solvent containing at least one kind of water, methanol, ethanol, and isopropanol; andwashing the ITO particles.7. The production method of ITO particles according to claim 6 , wherein claim 6 , in the solution claim 6 , concentration of the In salt is from 4.5 times to 9 times of concentration of the Sn salt in terms of mole.8. A production method of dispersion claim 6 , comprising:obtaining ITO particles by causing a reaction at a temperature from 190° C. to 200° C. for 12 hours to 120 hours in a solution containing In salt from 0.09 M to 0.9 M, Sn salt from 0.01 M to 0.2 M, a basic compound, and a first solvent containing at least one kind of water, methanol, ethanol, and isopropanol;washing the ITO particles; anddispersing the washed ITO particles, in a second solvent.9. The production method of dispersion according to claim 8 , wherein claim 8 , in the solution claim 8 , concentration of the In salt is from 4.5 times to 9 times ...

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Номер записи: 19
07-01-2021 дата публикации

ITO PARTICLES, DISPERSION, AND PRODUCTION METHOD OF ITO FILM

Номер: US20210002495A1
Автор: KANIE Kiyoshi, MURAMATSU Atsushi, NAKAZUMI Makoto, NISHI Yasutaka, SUZUKI Ryoko
Принадлежит:

Provided is ITO particles satisfying a relationship expressed in Expression (1) given below. 16×S/P≤0.330 . . . (1) (In the expression, S indicates a particle area in a TEM photographed image, and P indicates a perimeter of the particle.) 1. ITO particles satisfying a relationship expressed in Expression (1) given below:{'br': None, 'i': 'S/P', '16×2≤0.330\u2003\u2003(1)'}wherein S indicates a particle area in a TEM photographed image, and P indicates a perimeter of the particle.2. The ITO particles according to claim 1 , wherein a molar ratio of a content amount of Sn to a content amount of In (Sn/In) falls within a range from 3.5 to 24.3. The ITO particles according to claim 1 , wherein an aligned crystal orientation is provided inside particles.4. Dispersion comprising the ITO particles according to claim 1 , dispersed in a solvent.5. The dispersion according to claim 4 , wherein the solvent comprises water.6. The dispersion according to claim 4 , wherein the dispersion is substantially prevented from comprising a surfactant.7. The dispersion according to claim 4 , wherein a ratio of a volume of the ITO particles to a volume of the solvent is 40% or less.8. A production method of an ITO film claim 4 , comprising:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, 'forming the dispersion according to into mist;'}bringing the misted dispersion, into contact with a base plate; anddrying the dispersion on the base plate after the contact. This application is a Continuation Application, under 35 U.S.C. § 111(a), of international Patent Application No. PCT/JP2018/043512, filed on Nov. 27, 2018, which claims foreign priority benefit of Japanese Patent Application No. 2018-004226 filed on Jan. 15, 2018 in the Japanese Patent Intellectual Property Office, the contents of both of which are incorporated herein by reference.The present invention relates to ITO particles, dispersion in which the ITO particles are dispersed, and a production method of an ITO film.With regard to ...

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Номер записи: 20
04-01-2018 дата публикации

CVD COATED CUTTING TOOL WITH TEXTURED k-Al2O3 LAYER

Номер: US20180002817A1
Автор: ENGQVIST Jan, Lindahl Erik
Принадлежит:

The present disclosure relates to a coated cutting tool having a substrate and a coating, wherein the coating includes at least one layer of κ-AlOwith a thickness of 1-20 μm deposited by chemical vapour deposition (CVD). A χ-scan from −80° to 80° over the (0 0 6) reflection of the κ-AlOlayer shows the strongest peak centered around 0° and the full width half maximum (FWHM) of the peak is <25°. 1. A coated cutting tool comprising a substrate and a coating , wherein the coating comprises at least one layer of κ-AlOwith a thickness of 1-20 μm deposited by chemical vapor deposition , wherein a χ-scan from −80° to 80° over a (0 0 6) reflection of said κ-AlOlayer shows the strongest peak centered around 0° and wherein a FWHM of said peak is <25°.2. The coated cutting tool in accordance with claim 1 , wherein the strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is a (0 0 2) reflection.3. The coated cutting tool in accordance with claim 2 , wherein the second strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is a (0 0 4) reflection.4. The coated cutting tool in accordance with claim 3 , wherein the third strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is the (0 0 6) reflection.5. The coated cutting tool in accordance with claim 1 , wherein an average thickness of the κ-AlOlayer is 2-10 μm.6. The coated cutting tool in accordance with claim 1 , wherein the coating further comprises an α-AlOlayer.7. The coated cutting tool in accordance with claim 6 , wherein said α-AlOlayer is located between said κ-AlOlayer and the substrate.8. The coated cutting tool in accordance with claim 1 , wherein the thickness of said α-AlOlayer is 0.5-2 μm or 0.7-1 μm.9. The coated cutting tool in accordance with claim 1 , wherein the coating further comprises one or more layers of TiN claim 1 , TiCN claim 1 , TiC claim 1 , TiCO claim 1 , TiAlCO and TiCNO.10. The coated cutting tool in accordance with claim 1 , ...

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Номер записи: 21
02-01-2020 дата публикации

Tin-Containing Precursors and Methods of Depositing Tin-Containing Films

Номер: US20200002814A1
Автор: David Thompson, Mark Saly, Thomas Knisley
Принадлежит: Applied Materials Inc

Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

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Номер записи: 22
03-01-2019 дата публикации

GERMANANE ANALOGS AND OPTOELECTRONIC DEVICES USING THE SAME

Номер: US20190006605A1
Автор: Bianco Elisabeth, Goldberger Joshua, Jiang Shishi
Принадлежит:

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials. 120-. (canceled)21. A method of synthesizing M-R comprising:{'sub': '2', 'a. reacting A-Mwith R—X to form M-R;'}wherein A is an alkaline earth metal;wherein M is Ge or Sn;wherein X is a halogen; and{'sub': '1-18', 'wherein R is Calkyl or H.'}22. The method of claim 21 , wherein R is H or CH.23. The method of claim 21 , wherein the reaction occurs in the absence of solvent.24. The method of claim 21 , wherein the reaction occurs in the presence of a solvent.2526-. (canceled)27. The method of claim 21 , wherein M is Ge.28. The method of claim 21 , wherein R is CH. This application is a divisional of U.S. patent application Ser. No. 14/244,572, filed on Apr. 3, 2014, which claims the benefit of U.S. Provisional Application No. 61/814,412, filed on Apr. 22, 2013, and U.S. Provisional Application No. 61/822,065, filed on May 10, 2013; the entire contents of each of which are fully incorporated by reference herein.This invention was made with government support under grant/contract no. NSF/DMR-1201953 awarded by NSF and grant/contract no. W911-NF-12-1-0481 awarded by DARPA—ARMY/ARO. The government has certain rights in the invention.Two-dimensional van der Waals materials have shown great promise for a variety of electronic, optoelectronic, sensing and energy conversion applications. New materials are needed for such applications as well as new ways of making such two-dimensional van der Waals materials.In an embodiment, the invention provides a two-dimensional layer comprising M-R, wherein M is selected from the group consisting of Ge, and Sn; and wherein R is Calkyl or OH.In an embodiment, the invention provides a stack comprising the two-dimensional layer of M-R.In an embodiment, the invention provides an alloy comprising GeSnR, wherein Ris H, OH or Calkyl and x is about 0 to about 1; wherein Ris not H ...

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Номер записи: 23
12-01-2017 дата публикации

METHOD OF PRODUCING STANNOUS OXIDE, STANNOUS OXIDE, METHOD OF Sn PLATING SOLUTION, AND METHOD OF REMOVING IMPURITIES FROM SN PLATING SOLUTION

Номер: US20170009078A1
Автор: Hirano Hirotaka, Katase Takuma
Принадлежит: MITSUBISHI MATERIALS CORPORATION

The method of producing stannous oxide includes: a Sn ion-containing acid solution forming step (S); a first neutralizing step (S), which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein; a Sn precipitate separating step (S); a Sn precipitate dispersing step (S), which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; and a second neutralizing step (S), which is a step of forming SnO by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, wherein Na, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step (S). 1. A method of producing stannous oxide comprising:a Sn ion-containing acid solution forming step, which is a step of preparing a Sn ion-containing acid solution by adding Sn ions to an acid solution;a first neutralizing step, which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein;a Sn precipitate separating step, which is a step of separating the Sn precipitates from the Sn ion-containing acid solution;a Sn precipitate dispersing step, which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; anda second neutralizing step, which is a step of forming SnO from the Sn precipitates by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, whereinNa, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step.2. The method of producing stannous oxide according to claim 1 , further comprising an acid ...

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Номер записи: 24
09-01-2020 дата публикации

SECURITY INK PIGMENT, SECURITY INK, PRINTED MATTER, AND METHOD OF PRODUCING SECURITY INK PIGMENT

Номер: US20200009895A1
Автор: HISHIKI Tatsuya
Принадлежит:

Security of a printed matter is enhanced, and a visual image is made to clear if a latent image formed by a coat printed on a matter to be printed for a security enhancement of the printed matter becomes the visual image. A security ink pigment contains a powder. A main constituent of the powder is a perovskite-type oxide. The perovskite-type oxide has a composition expressed as a general formula of ABO. A is mainly made of Ba. B is mainly made of Sn. The powder emits infrared fluorescence when being irradiated with ultraviolet excitation light. The perovskite-type oxide has a crystal lattice constant having a difference equal to or smaller than 0.002 angstrom from a theoretical crystal lattice constant of the perovskite-type oxide having a composition expressed as a composition formula of BaSnO. 1. A security ink pigment , comprising{'sub': '3', 'a powder having a main constituent of a perovskite-type oxide which is expressed as a general formula of ABO, A being mainly made of Ba and B being mainly made of Sn, and emitting infrared fluorescence when being irradiated with ultraviolet excitation light, wherein'}{'sub': '3', 'the perovskite-type oxide has a crystal lattice constant having a difference equal to or smaller than 0.002 angstrom from a theoretical crystal lattice constant of the perovskite-type oxide having a composition expressed as a composition formula of BaSnO.'}2. The security ink pigment according to claim 1 , wherein{'sup': 2', '2, 'the powder has a specific surface area ranging from 0.079 m/g to 10 m/g.'}3. The security ink pigment according to claim 1 , whereina median diameter of the powder is equal to or smaller than 10 μm.4. The security ink pigment according to claim 1 , wherein{'sub': 3', '1-x', 'x', '3, 'the perovskite-type oxide which is expressed as the general formula of ABO, A being mainly made of Ba and B being mainly made of Sn, has a composition expressed as a general formula of BaSnZnO, x satisfying 0≤x≤0.2.'}5. A security ink claim ...

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Номер записи: 25
10-01-2019 дата публикации

OXIDE MATERIAL AND SEMICONDUCTOR DEVICE

Номер: US20190013407A1
Автор: HONDA Tatsuya, NAKASHIMA Motoki, Yamazaki Shunpei
Принадлежит:

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis. 1. (canceled)2. A semiconductor device comprising:a gate electrode;a gate insulating film adjacent to the gate electrode; anda semiconductor layer comprising an oxide material, and being adjacent to the gate insulating film, wherein the semiconductor layer is formed by sputtering;wherein the oxide material comprises at least two crystals with c-axis alignment adjacent to each other,wherein each of the two crystals comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane, andwherein a direction of an a-axis or a b-axis of one of the two crystals is different from one of a direction of an a-axis or a b-axis of the two crystals, in the a-b plane.3. The semiconductor device according to claim 2 , wherein the oxide material is in contact with a pair of conductive films.4. The semiconductor device according to claim 3 , wherein the pair of conductive films functions as a source electrode and a drain electrode of a transistor.5. The semiconductor device according to claim 2 , wherein each of the two crystals comprises metal atoms claim 2 , or metal atoms and oxygen atoms arranged in a layered manner when seen from a direction perpendicular to ...

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Номер записи: 26
21-01-2016 дата публикации

METHOD FOR PRODUCING LACTIDE DIRECTLY FROM LACTIC ACID AND A CATALYST USED THEREIN

Номер: US20160016151A1
Автор: Chang Jong-San, HWANG Dong Won, Hwang Young Kyu, LEE U-Hwang, UPARE Pravin P.
Принадлежит:

The present invention provides a method for directly producing lactide by subjecting lactic acid to a dehydration reaction in the presence of a catalyst comprising a tin compound, preferably, a tin (IV) compound, wherein lactide can be produced directly or by one step from lactic acid, without going through the step of producing or separating lactic acid oligomer. The method of the present invention has advantages of causing no loss of lactic acid, having a high conversion ratio to lactic acid and a high selectivity to optically pure lactide, and maintaining a long life time of the catalyst. Further, since lactic acid oligomer is not or hardly generated and the selectivity of meso-lactide is low, the method also has an advantage that the cost for removing or purifying this can be saved.

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Номер записи: 27
19-01-2017 дата публикации

Composition for Preparing Molded Polymeric Article

Номер: US20170015805A1
Автор: Hickenboth Charles R., Kryger Matthew J., Zawacky Steven R.
Принадлежит:

The present invention is directed to an organic polymerizable composition for producing a molded polymeric article. The composition includes a mold release agent of ionic fluoride and/or ionic fluoride precursor present in an amount sufficient to effect at least partial demolding of the polymeric article from a mold. Molded articles also are provided. 1. An organic polymerizable composition for producing a molded polymeric article , the composition comprising a mold release agent comprised of ionic fluoride and/or ionic fluoride precursor present in an amount sufficient to effect at least partial demolding of the polymeric article from a mold.2. The organic polymerizable composition of claim 1 , wherein the mold release agent consists essentially of a fluoride-containing salt.3. The organic polymerizable composition of claim 1 , wherein the mold release agent is selected from boron trifluoride and/or a fluoride-containing material having the following structure (I):{'br': None, 'sub': n', '(4-n), 'MRF'} M represents tin, bismuth, titanium, tantalum, cerium, zirconium, antimony, zinc, aluminum, yttrium, vanadium, or niobium;', 'each R independently represents a monovalent hydrocarbon group; and', 'n is an integer ranging from 1 to 3., 'where'}4. The organic polymerizable composition of claim 1 , wherein the mold release agent is selected from the group consisting of ammonium fluoride claim 1 , potassium fluoride claim 1 , cesium fluoride claim 1 , tin (II) fluoride claim 1 , sodium tetrafluoroborate claim 1 , tetrabutyl ammonium fluoride (trihydrate) claim 1 , and mixtures thereof.5. The organic polymerizable composition of claim 1 , wherein the composition further comprises a mold release agent which does not comprise ionic fluoride.6. The organic polymerizable composition of claim 5 , wherein the mold release agent which does not comprise ionic fluoride is selected from mono-alkyl phosphates claim 5 , dialkyl phosphates claim 5 , organic fatty acids claim 5 , ...

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Номер записи: 28
18-01-2018 дата публикации

MAGNETO-OPTICAL MATERIAL, METHOD FOR PRODUCING SAME AND MAGNETO-OPTICAL DEVICE

Номер: US20180017816A1
Автор: IKARI Masanori, Matsumoto Takuto
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

Provided, as a transparent magneto-optical material which does not absorb fiber laser light within a wavelength range of 0.9-1.1 μm and is thus suitable for constituting a magneto-optical device such as an optical isolator wherein the formation of a thermal lens is suppressed, is a magneto-optical material which is composed of a transparent ceramic that contains a complex oxide represented by formula (1) as a main component, or which is composed of a single crystal of a complex oxide represented by formula (1). 2. The magneto-optical material of which is characterized in that when laser light having a wavelength of 1 claim 1 ,064 nm is input thereto at a beam diameter of 1.6 mm claim 1 , for an optical path length of 10 mm claim 1 , the maximum input power of laser light which does not generate a thermal lens is 30 W or more.3. The magneto-optical material of which claim 1 , for an optical path length of 10 mm claim 1 , has a linear transmittance of light at a wavelength of 1 claim 1 ,064 nm that is at least 90%.4. The magneto-optical material of claim 1 , which has a main phase comprising a cubic crystal haying a pyrochlore lattice.6. The method for producing a magneto-optical material of wherein the fired starting material is prepared by weighing out the terbium oxide powder and the at least one oxide powder selected from the group consisting of silicon oxide claim 5 , germanium oxide claim 5 , titanium oxide claim 5 , tantalum oxide claim 5 , tin oxide claim 5 , hafnium oxide and zirconium oxide so that a molar ratio of the terbium atom to the at least one atom selected from the group consisting of silicon claim 5 , germanium claim 5 , titanium claim 5 , tantalum claim 5 , tin claim 5 , hafnium and zirconium is x:(2-x) (wherein x is larger than 0.800 and less than 1.00) claim 5 , mixing the powders and then firing the mixed powders.7. A magneto-optical device which is constructed using the magneto-optical material of .8. The magneto-optical device of claim 7 , ...

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Номер записи: 29
17-01-2019 дата публикации

Cu2XSnY4 Nanoparticles

Номер: US20190019906A1
Автор: Gresty Nathalie, Harris James, Masala Ombretta, Newman Christopher, Pickett Nigel, Wylde Laura
Принадлежит:

Materials and methods for preparing CuXSnYnanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles. 1. A method for preparing an absorber layer for a photovoltaic (PV) device , the method comprising: [{'sub': 2', '4, 'a semiconductor nanocrystal having an outer surface, the semiconductor nanocrystal having the formula CuXSnY, where X is Cd, Hg, Ni, Co, Mn, or Fe and Y is S or Se; and'}, 'a surface coating on the outer surface of the semiconductor nanocrystal and consisting of labile organo-chalcogen ligands;, 'dissolving or dispersing a population of nanoparticles in a solvent to form a nanoparticle ink, each nanoparticle comprisingdepositing the nanoparticle ink on a substrate to form a nanoparticle film;annealing the substrate and nanoparticle film at a first temperature for a first time interval; andannealing the substrate and nanoparticle film at a second temperature for a second time interval,wherein the second temperature is higher than the first temperature.2. The method of claim 1 , wherein the solvent is a non-polar solvent.3. The method of claim 1 , wherein the nanoparticle ink is deposited on the substrate by any one of spin-coating claim 1 , slit-coating claim 1 , drop-casting claim 1 , doctor blading claim 1 , and inkjet printing.4. The method of claim 1 , wherein the first temperature is between 260 and 350° C.5. The method of claim 1 , wherein the first time interval is between 3 and 10 minutes.6. The method of claim 1 , wherein the second temperature is between 350 and 440° C.7. The method of claim 1 , wherein the second time interval is between 3 and 10 minutes.8. The method of claim 1 , ...

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Номер записи: 30
24-04-2014 дата публикации

Method of producing sulfide compound semiconductor by use of solvothermal method and rod-like crystal of sulfide compound semiconductor

Номер: US20140110640A1
Автор: Haijun Tao, Kazumichi Yanagisawa, Keisuke Kishita, Sumio Kamiya
Принадлежит: Kochi University NUC, Toyota Motor Corp

The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

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Номер записи: 31
01-02-2018 дата публикации

NANOMETRIC TIN-CONTAINING METAL OXIDE PARTICLE AND DISPERSION, AND PREPARATION METHOD AND APPLICATION THEREOF

Номер: US20180031739A1
Автор: Chen Jianfeng, Shen Zhigang, SHER Hock Sing, Soh Wei Kian, WANG Aici, YUN Sung Lai Jimmy, Zhang Jiyao, ZHONG Jie
Принадлежит:

There is disclosed a tin-containing metal oxide nanoparticle, which has an index of dispersion degree less than 7 and a narrow particle size distribution which is defined as steepness ratio less than 3. There is disclosed dispersion, paint, shielding film and their glass products which comprise the said nanoparticles. Besides, there are also disclosed processes of making the tin-containing metal oxide nanoparticle and their dispersion. The tin-containing metal oxide nanoparticles and their dispersion disclosed herein may be applied on the window glass of houses, buildings, vehicles, ships, etc. There is provided an excellent function of infrared blocking with highly transparent, and to achieve sunlight controlling and thermal radiation controlling. 139-. (canceled)40. A method for preparing a dispersion of tin-containing metal oxide nano-particles , wherein the tin-containing metal oxide comprises tin element and an aid metallic element other than tin selected from antimony , indium , titanium , copper , zinc , zirconium , cerium , yttrium , lanthanum , niobium or a mixture thereof; and the tin-containing metal oxide nano-particles have an initial average particle diameter of 2-50 nm , a particle diameter distribution as defined with an index of dispersion degree of less than 7 and a steepness ratio of less than 3 , the method comprises steps of:(1) reacting a solution containing tin ions and a solution containing ions of the aid metallic element other tin with a solution of precipitating agent at a temperature of less than 100° C. under a non-acidic condition in an aqueous medium comprising at least one of alcohols, amides, ketones, epoxides and mixtures thereof to form tin-containing metal oxide precursor particles and a first by-product in ionic form; wherein the precipitating agent is selected from alkali metal hydroxides, alkaline earth metal hydroxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal bicarbonates, ammonia, organic bases ...

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Номер записи: 32
01-02-2018 дата публикации

SYNTHESIZED, SURFACE-FUNCTIONALIZED, ACIDIFIED METAL OXIDE MATERIALS FOR ENERGY STORAGE, CATALYTIC, PHOTOVOLTAIC AND SENSOR APPLICATIONS

Номер: US20180034049A1
Автор: Johnson Paige L., Neff Jonathan G.
Принадлежит:

An acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. The AMO material is useful in applications such as a battery electrode, catalyst, or photovoltaic component. 1. A battery electrode nanomaterial comprising:{'sub': '0', 'a non-soluble solid metal oxide having a particle dimension no greater than 20 nm and having, at least on its surface, a pH<5.5 and a Hammet function H>−12;'}the non-soluble solid metal oxide being in a dried form after synthesis, the pH being measured when the dried form is re-suspended in water at 5 wt %.2. A battery electrode nanomaterial according to claim 1 , the non-soluble solid metal oxide being tin oxide.3. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1400 mAh/g.4. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1300 mAh/g.5. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1200 mAh/g.6. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1100 mAh/g.7. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1000 mAh/g.8. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 900 mAh/g.9. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity>800 mAh/g.10. A battery electrode nanomaterial according to claim 1 , the non-soluble solid metal oxide being surface functionalized with at least one electron-withdrawing group claim 1 , the at least one electron-withdrawing group having a molecular weight less than 200.11. A battery electrode nanomaterial according to claim 1 , the ...

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Номер записи: 33
31-01-2019 дата публикации

METHOD FOR PRODUCING A CONTACT MATERIAL ON THE BASIS OF SILVER-TIN OXIDE OR SILVER-ZINC OXIDE, AND CONTACT MATERIAL

Номер: US20190035563A1
Автор: Behrens Volker, Cinaroglu Havva, Honig Thomas
Принадлежит:

A method for producing a contact material on the basis of silver-tin oxide or silver-zinc oxide is disclosed. Tin oxide particles and/or zinc oxide particles are mixed with a powder of a metal different from silver. The mixture is heated beyond the melting point of the metal powder such that the tin oxide particles and/or zinc oxide particles are wetted with liquid metal. The mixture is exposed to an atmosphere containing oxygen and the metal is thereby oxidized. Thereafter, the mixture product formed by the oxidation step is embedded as a powder into a silver matrix. The product further relates to a corresponding contact material. 1. A method for the production of a contact material based on silver tin oxide or silver zinc oxide , the method comprising the steps of:forming a mixture by mixing particles of tin oxide and/or zinc oxide with a powder of a metal that differs from silver;heating this mixture beyond the melting point of the metal powder, wherein the tin oxide and/or zinc oxide particles are wetted with liquid metal;exposing the mixture to an oxygen-containing atmosphere thereby oxidizing the metal; andembedding the mixture formed by the oxidation step as a powder in a silver matrix.2. The method as claimed in claim 1 , wherein the metal powder contains bismuth as the main component.3. The method as claimed in claim 2 , wherein the oxidation step is carried out at a raised temperature of at least 600° C.4. The method as claimed in claim 1 , wherein the oxidation step is carried out at a raised temperature of at least 600° C.5. The method as claimed in claim 1 , wherein the mixture formed by the oxidation step undergoes a heat treatment at a raised temperature of at least 1000° C.6. The method as claimed in claim 1 , wherein embedding into the silver matrix is carried out by mixing with silver powder and subsequently sintering the silver powder.7. A contact material produced using the method as claimed in . This continuation application claims priority to ...

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Номер записи: 34
11-02-2016 дата публикации

COMPOSITE METAL OXIDE MATERIALS INCLUDING POLYCRYSTALLINE NANOFIBERS, MICROPARTICLES, AND NANOPARTICLES, GAS SENSORS USING THE SAME AS A SENSING MATERIAL THEREOF, AND MANUFACTURING METHODS THEREOF

Номер: US20160041116A1
Автор: Cho Hee Jin, KIM Il Doo
Принадлежит:

Provided are a composite metal oxide material, a method of manufacturing the same, and a gas sensor using the same as a sensing material thereof. The composite metal oxide material may include polycrystalline nanofibers and at least one of microparticles and nanoparticles. The use of the composite metal oxide material makes it possible to improve structural, mechanical, thermal, and lifetime stabilities of the gas sensor. Further, the presence of the microparticles and/or nanoparticles allows the gas sensor to have a base resistance lower than that of a nanofiber-based gas sensor. Since the microparticles and/or nanoparticles are attached to the nanofibers, the composite metal oxide material can have an increased mobility of electrons or holes and an increased surface area, and thus, the gas sensor can have fast response/recovery speeds and high gas sensitivity. 1. A composite sensing material comprising:a composite containing polycrystalline nanofibers formed of a metal oxide and at least one of microparticles and nanoparticles formed of a same metal oxide,wherein the polycrystalline nanofibers, the microparticles, and the nanoparticles have weight percentages X, Y, and Z, respectively, whose sum is 100 wt %, andthe composite has:a composition ratio of X:Y:Z for the composite containing the polycrystalline nanofibers, the microparticles, and the nanoparticles, where the value X is greater than or equal to 20 wt % and is smaller than or equal to 95 wt %, the value Y is greater than 0 wt % and is smaller than or equal to 80 wt %, and the value Z is greater than 0 wt % and is smaller than or equal to 30 wt %,a composition ratio of X:Y, for the composite containing the polycrystalline nanofibers and the microparticles, or of X:Z, for the composite containing the polycrystalline nanofibers and the nanoparticles, where the value X is greater than or equal to 10 wt % and is smaller than or equal to 90 wt %, the value Y or Z is greater than or equal to 10 wt % and is ...

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Номер записи: 35
18-02-2021 дата публикации

STANNOUS OXIDE POWDER

Номер: US20210047198A1
Автор: Imori Toru, TAKEMOTO Koichi
Принадлежит:

The purpose of the present invention is to provide a stannous oxide, which has excellent solubility and resistance to oxidation, from a stannous oxide powder comprising a stannous oxide and inevitable impurities, the stannous oxide powder having a stannous oxide content of 99.99 mass % or more in dry mass, a specific surface area of less than 0.5 m/g, a D50 particle size of 20 to 60 μm, and a half width of the particle size distribution of 5 to 30 μm. 1. A stannous oxide powder comprising stannous oxide and inevitable impurities , the stannous oxide powder having:a stannous oxide content of 99.99% by mass or more in dry mass;{'sup': '2', 'a specific surface area of less than 0.5 m/g;'}a D50 particle size of from 20 to 60 μm; anda half width of a particle size distribution of from 5 to 30 μm.2. The stannous oxide powder according to claim 1 , wherein a water content in stannous oxide is from 1 to 5 wt %.3. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a chlorine content of 1 ppm or less and a sulfur content of 10 ppm or less.4. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a sodium content of 5 ppm or less and a potassium content of 5 ppm or less.5. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has an antimony content of 5 ppm or less.6. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a TAP density of from 1.0 to 4.0 g/cm.7. The stannous oxide power according to claim 1 , wherein when 100 g/L of stannous oxide powder is added to a solution having a methanesulfonic acid concentration of 100 g/L claim 1 , the stannous oxide is dissolved in the solution for a time less than or equal to 30 seconds and has a turbidity after dissolution of 20 degrees. The present invention relates to stannous oxide powder.When performing tin plating, an insoluble electrode (platinum, noble metal oxide, or the like) may be used in ...

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Номер записи: 36
19-02-2015 дата публикации

Metal complex of fluorinated tin oxide and titanium oxide and preparation method thereof

Номер: US20150051069A1
Автор: Hyun-Seog Roh, Kee Young Koo, Kwang Bok Yi, Nu Ri Jeon, Soon Jin Kwon, Un-Ho Jung, Wang Lai Yoon, Woohyun Kim
Принадлежит: Korea Institute of Energy Research KIER

Disclosed is a metal complex including: a tin oxide; titanium oxide nanorods in a rutile phase formed on the tin oxide; and titanium oxide nanoparticles in an anatase phase formed on the titanium oxide nanorods in a rutile phase, and a preparation method thereof, and can be used as a catalyst support in various forms.

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Номер записи: 37
08-05-2014 дата публикации

TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION AND METHOD FOR MANUFACTURING SAID POWDER

Номер: US20140127109A1
Автор: Katase Takuma, Kuba Kanji, Masuda Akihiro
Принадлежит: MITSUBISHI MATERIALS CORPORATION

An object and a problem of the present invention is to provide tin (II) oxide powder which has extremely high solubility in an acid or an acidic plating solution and excellent in storage stability in the air. The tin (II) oxide powder of the present invention is for replenishing a tin component of a tin-alloy plating solution, and comprises 100 to 5000 ppm of an antioxidant being contained in the powder with a mass ratio, and has such a dissolution rate that when 0.1 g of the tin (II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic acid solution at a temperature of 25° C. and stirred, then the powder dissolves therein within 180 seconds. 1. Tin (II) oxide powder for replenishing a tin component of a tin-alloy plating solution ,which comprises 100 to 5000 ppm of an antioxidant being contained in the powder with a mass ratio, andhas such a dissolution rate that when 0.1 g of the tin (II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic acid solution at a temperature of 25° C. and stirred, then the powder completely dissolves therein within 180 seconds.2. The tin (II) oxide powder for replenishing tin component of tin-alloy plating solution according to claim 1 , wherein the antioxidant is at least one selected from the group consisting of glyceraldehyde claim 1 , phenylhydrazine claim 1 , sodium borohydride claim 1 , potassium borohydride claim 1 , lithium borohydride claim 1 , tetrahydrofuran-borane complex claim 1 , dimethylamine-borane complex claim 1 , diphenylamine-borane complex and pyridine-borane complex.3. A method for manufacturing the tin (II) oxide powder for replenishing tin component of tin-alloy plating solution according to claim 1 , comprising steps of:{'sup': '2+', 'preparing an aqueous acidic solution containing Snions;'}neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin (II) hydroxide;dehydrating the prepared slurry to obtain a slurry of tin (II) oxide; ...

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Номер записи: 38
25-02-2016 дата публикации

SINGLE-STEP SYNTHESIS OF NANOSTRUCTURED THIN FILMS BY A CHEMICAL VAPOR AND AEROSOL DEPOSITION PROCESS

Номер: US20160056448A1
Автор: An Woo-Jin, Biswas Pratim, Chadha Tandeep Singh
Принадлежит:

The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors. 1. A chemical vapor and aerosol deposition process for the preparation of a metal species-based nanostructured film , the process comprising:introducing at least one vaporized metal precursor into a reaction chamber;decomposing, at least in part, the at least one vaporized precursor to form metal species-based nanoparticles;depositing the nanoparticles and any remaining vaporized precursor onto a temperature controlled substrate; and, sintering the nanoparticles to form the metal species-based nanostructured film.2. The process of claim 1 , wherein the metal species-based nanoparticles comprise a metal oxide selected from the group consisting of lithium titanate claim 1 , aluminum titanate claim 1 , titanium dioxide claim 1 , tin oxide claim 1 , lithium manganese oxide claim 1 , lithium cobalt oxide claim 1 , lithium manganese nickel cobalt oxide claim 1 , nickel oxide claim 1 , copper oxide claim 1 , and combinations thereof.3. The process of claim 1 , wherein the nanostructure is of a morphology selected from the group consisting of a predominantly columnar morphology claim 1 , a predominantly granular morphology claim 1 , a predominantly smooth morphology claim 1 , a predominantly nanorod morphology claim 1 , a predominantly nanowire morphology claim 1 , and a predominantly branched morphology.4. The process of claim 3 , wherein the nanostructure is of a predominantly columnar morphology.5. The process of claim 4 , wherein the columnar morphology has a crystalline order of from about 1 nanometer to about 5 micrometers.6. The process of claim 1 , wherein the at least one ...

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Номер записи: 39
15-05-2014 дата публикации

Tin dioxide nanopartcles and method for making the same

Номер: US20140135206A1
Автор: Brant U. Kolb, Mark J. Hendrickson, Neeraj Sharma
Принадлежит: 3M Innovative Properties Co

Plurality of crystalline, surface modified tin oxide nanoparticles, wherein the particles have a largest dimension up to 20 nm, and wherein the surface modifier comprises at least one of an organic carboxylic acid or anion thereof, including a dispersion comprising the crystalline, surface modified tin oxide nanoparticles and methods to make the same. The crystalline surface modified doped tin oxide nanoparticles are useful, for example, for preparing transparent electrodes, heat mirrors and energy storage devices.

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Номер записи: 40
05-03-2015 дата публикации

Composite material for a lithium ion battery anode and a method of producing the same

Номер: US20150064564A1
Автор: Man On Fu, Pau Yee Lim, Tak Cheung YAU, Yingkai JIANG
Принадлежит: Hong Kong Applied Science and Technology Research Institute ASTRI

A composite material for a lithium ion battery anode and a method of producing the same is disclosed, wherein the composite material comprises a porous electrode composite material. Pores with carbon-based material forming at the pore wall are created in situ. The porous electrode composite material provide space to accommodate volumetric changes during battery charging and discharging while the carbon-based material improved the conductivity of the electrode composite material. The method creates pores to have a denser carbon content inside the pores and a wider mouth of the pores to enhance lithium ion distribution.

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Номер записи: 41
08-03-2018 дата публикации

FLUOROALKYL-CONTAINING CURABLE ORGANOPOLYSILOXANE COMPOSITION, CURED OBJECT OBTAINED THEREFROM, AND ELECTRONIC COMPONENT OR DISPLAY DEVICE INCLUDING SAID CURED OBJECT

Номер: US20180065347A1
Автор: Fukui Hiroshi, Masatomi Toru, OGAWA Takuya
Принадлежит:

A curable organopolysiloxane composition containing a fluoroalkyl group is disclosed. The composition comprises: (A) an organopolysiloxane containing a fluoroalkyl group, having at least two alkenyl groups in a molecule, where 10 mol % or more of all substitution groups on the silicon atoms is a fluoroalkyl group, and the average degree of polymerization is less than 150; (B) an organohydrogen polysiloxane having at least two silicon-bonded hydrogen atoms in a molecule at an amount where the silicon-bonded hydrogen atoms in the component is 0.1 to 1.0 mol with regard to a total of 1 mol of the alkenyl groups in component (A); (C) an effective amount of a hydrosilylation reaction catalyst; and optionally, (D) a solvent. The composition generally has a high dielectric constant and favorable transparency. A cured product and applications of the composition and the cured product thereof are also disclosed. 1. A curable organopolysiloxane composition containing a fluoroalkyl group , comprising:{'sub': p', '2p+1, '(A) 100 parts by mass of an organopolysiloxane containing a fluoroalkyl group, having at least two alkenyl groups with 2 to 12 carbon atoms in a molecule, where 10 mol % or more of all substitution groups on the silicon atoms is a fluoroalkyl group as expressed by (CF)—R— where R represents an alkylene group with 1 to 10 carbon atoms, and p represents an integer from 1 to 8, and the average degree of polymerization is less than 150;'}(B) an organohydrogen polysiloxane having at least two silicon-bonded hydrogen atoms in a molecule at an amount where the silicon-bonded hydrogen atoms in the component is 0.1 to 1.0 mol with regard to a total of 1 mol of the alkenyl groups in component (A);(C) an effective amount of a hydrosilylation reaction catalyst; and(D) 0 to 2,000 parts by mass of a solvent, with regard to a total of 100 parts by mass of components (A) to (C).4. The curable organopolysiloxane composition containing a fluoroalkyl group according to claim 1 , ...

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Номер записи: 42
08-03-2018 дата публикации

Method for chlorination and dehydrogenation of ethane

Номер: US20180065902A1
Автор: Jingguang ZHONG, Xing Liu, Xuehua Liu
Принадлежит: Zhongke Yigong (Xiamen) Chemical Tech Co Ltd

The present invention relates to a method for chlorination and dehydrogenation of ethane, comprising: mixing and reacting a low-melting-point metal chloride with C 2 H 6 , such that the low-melting-point metal chloride is reduced to a liquid-state low-melting-point metal, and the C 2 H 6 is chlorinated and dehydrogenized to give a mixed gas containing HCl, C 2 H 6 , C 2 H 4 , C 2 H 2 and C 2 H 3 Cl. In the method, the low-melting-point metal chloride is used as a raw material for chlorination and dehydrogenation, and the low-melting-point metal produced after the reaction is used as an intermediate medium. The method has the characteristics of simple process, low cost and high yield. Moreover, some acetylene and vinyl chloride can be produced as by-products at the same time when the ethylene is produced, by controlling the ratio of ethane to the chloride as desired in production.

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Номер записи: 43
08-03-2018 дата публикации

Minimizing Tin Loss During Thermal Processing of Kesterite Films

Номер: US20180069146A1
Автор: Todorov Teodor K.
Принадлежит:

Techniques for minimizing loss of volatile components during thermal processing of kesterite films are provided. In one aspect, a method for annealing a kesterite film is provided. The method includes: placing a cover over the kesterite film; and annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T and the kesterite film is at a temperature T, wherein the temperature T is greater than or equal to the temperature T. Optionally, during a cool down segment of the annealing, conditions can be reversed to have the temperature T be less than the temperature T. A solar cell and method for formation thereof using the present annealing techniques are also provided. 1. A method for annealing a kesterite film , comprising:placing a cover over the kesterite film; and{'b': 1', '2', '1', '2, 'annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T and the kesterite film is at a temperature T, wherein the temperature T is greater than or equal to the temperature T.'}2. The method of claim 1 , further comprising:{'b': 1', '2, 'annealing the cover and the kesterite film both i) from a top of the cover at the temperature T and ii) from a bottom of the kesterite film at the temperature T.'}3. The method of claim 2 , wherein the cover and the kesterite film are annealed from the top of the cover using a first heating plate over the cover claim 2 , and wherein the cover and the kesterite film are annealed from the bottom of the kesterite film using a second heating plate below the kesterite film.4. The method of claim 1 , wherein the kesterite film comprises copper (Cu) claim 1 , zinc (Zn) claim 1 , tin (Sn) claim 1 , and at least one of sulfur (S) and selenium (Se).5. The method of claim 1 , wherein the cover comprises a quartz annealing chamber.612. The method of claim 1 , wherein the temperature T and the temperature T are each greater than ...

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Номер записи: 44
18-03-2021 дата публикации

SYNTHESIS OF MIXED METAL CHALCOGENIDES USING SOLID PHASE METHOD

Номер: US20210078871A1
Автор: Enhessari Morteza, Khoobi Asma, Salehabadi Ali
Принадлежит: Naragh branch,Islamic Azad University

An exemplary method for producing a mixed metal chalcogenide under atmospheric pressure may include forming a reaction mixture by mixing a first metal chalcogenide and a second metal chalcogenide. An exemplary method may further include pouring a first layer of NaCl within a reactor, where an exemplary reactor may include a container and a cap. Pouring an exemplary first layer of NaCl within an exemplary reactor may include pouring an exemplary first layer of NaCl on an exemplary base end of an exemplary container of the exemplary reactor. An exemplary method may further include pouring an exemplary reaction mixture into an exemplary container on top of an exemplary first layer of NaCl, pouring a second layer of NaCl into an exemplary container on top of an exemplary reaction mixture, sealing an exemplary container by closing an exemplary cap and pouring molten NaCl on top of the exemplary cap, and heating an exemplary reactor at a predetermined temperature for a predetermined time. 1. A method for producing a mixed metal chalcogenide under atmospheric pressure , the method comprising:forming a reaction mixture by mixing a first metal chalcogenide and a second metal chalcogenide;pouring a first layer of NaCl within a reactor, the reactor comprising a container and a cap, pouring the first layer of NaCl within the reactor comprising pouring the first layer of NaCl on a base end of the container;pouring the reaction mixture into the container on top of the first layer of NaCl;pouring a second layer of NaCl into the container on top of the reaction mixture;sealing the container by closing the cap and pouring molten NaCl on top of the cap; andheating the reactor at a predetermined temperature for a predetermined time.2. The method of claim 1 , wherein forming the reaction mixture further comprises:mixing NaCl with the first metal chalcogenide and the second metal chalcogenide with a molar ratio of (NaCl:the first metal chalcogenide:the second metal chalcogenide) between ...

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Номер записи: 45
24-03-2022 дата публикации

METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS

Номер: US20220093399A1
Автор: CHANDHOK Manish, Gstrein Florian, KRYSAK Marie
Принадлежит:

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material. 1. A method comprising:synthesizing metal oxide particles comprising a diameter of 5 nanometers or less; andcapping the metal oxide particles with an organic ligand at at least a 1:1 ratio.2. The method of claim 1 , wherein synthesizing comprises a sol gel synthesis.3. The method of claim 1 , wherein synthesizing comprises reducing a metal halide.4. The method of claim 1 , wherein the metal oxide particles comprise a metal selected from hafnium claim 1 , zirconium claim 1 , titanium claim 1 , aluminum and tin.5. The method of claim 1 , wherein the organic ligand comprises a carbonyl group claim 1 , C(O).6. The method of claim 5 , wherein the organic ligand comprises the formula claim 5 , —C(O)R claim 5 , wherein R is C1-C5.7. The method of claim 1 , further comprising dispersing the capped metal oxide particles in a casting solvent.8. The method of claim 8 , further comprising depositing the dispersed capped metal oxide particles on a semiconductor substrate and thermally curing to a metal oxide film on the semiconductor substrate.9. A method ...

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Номер записи: 46
24-03-2016 дата публикации

PREPARATION METHOD FOR METALLIC OXIDE SPHERICAL CASCADE STRUCTURE

Номер: US20160083263A1
Автор: CHEN YANFENG, LIU Zhi, Wang Chao, ZHU MINGWEI
Принадлежит:

A preparation method for a metallic oxide micro-nano spherical cascade structure, belonging to the field of nanometer/micrometer microstructure material and a preparation thereof is provided. The metallic oxide spherical cascade structure of the present invention refers to a micron-sized spherical particle structure composed of metallic oxide powder having a particle size of tens of nanometers. The preparation method is as follows: uniformly mixing the metallic oxide powder and polyethylene glycol by ball-milling to obtain mixed powder of the metallic oxide and the polyethylene glycol; preparing slurry from the resulting powder, stirring uniformly, and then drying the slurry to obtain a film or bulk on a substrate; and removing by calcining organic compounds to obtain a film or bulk of the metallic oxide spherical cascade structure. 1. A preparation method for a metallic oxide spherical cascade structure , comprising the following steps of:(1) uniformly mixing a metallic oxide powder and polyethylene glycol by ball-milling to obtain a mixed powder of the metallic oxide and the polyethylene glycol;(2) preparing a slurry from the aforementioned powder, stirring uniformly, and then drying the slurry to obtain a film or bulk on a substrate; and(3) removing organic compounds by calcining to obtain a film or bulk of the metallic oxide spherical cascade structure.2. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein the spherical cascade structure refers to a micro-nano secondary structure which is a micron-sized spherical particle structure composed of metallic oxide powder having a particle size of 2 to 100 nanometers.3. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein the metallic oxide is TiO claim 1 , FeO claim 1 , AlO claim 1 , SiOor SnO.4. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein claim 1 , in the step ...

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Номер записи: 47
25-03-2021 дата публикации

SOLAR CELL

Номер: US20210091323A1
Автор: Matsui Taisuke, YOKOYAMA TOMOYASU
Принадлежит:

The present disclosure provides a solar cell including a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion. The electron transport layer contains an electron transport material containing niobium oxide. The niobium oxide is amorphous. The electron transport material has a conduction band at a bottom of which an energy level with respect to a vacuum level is greater than −3.9 eV and less than −3.1 eV. 1. A solar cell comprising:a first electrode;a second electrode;a photoelectric conversion layer disposed between the first electrode and the second electrode; andan electron transport layer disposed between the first electrode and the photoelectric conversion layer,wherein at least one of the first electrode and the second electrode has a light-transmitting property,the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion,the electron transport layer contains an electron transport material containing niobium oxide,the niobium oxide is amorphous, andan energy level at the bottom of the conduction band of the electron transport material is greater than −3.9 eV and less than −3.1 eV with respect to a vacuum level.2. The solar cell according to claim 1 ,wherein the electron transport layer has a thickness of greater than or equal to 8 nm and less than or equal to 350 nm.3. The solar cell according to claim 2 ,wherein the electron transport layer has a thickness of greater than or equal to 10 nm and less than or equal to 350 nm.4. The solar cell according to claim 3 ,wherein the electron ...

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Номер записи: 48
06-04-2017 дата публикации

LAYERED SUBSTANCE-CONTAINING LIQUID AND METHOD FOR PRODUCING SAME

Номер: US20170095784A1
Автор: AOYAMA Yohei, KOBAYASHI Atsushi, Taniuchi Ryo
Принадлежит: ADEKA CORPORATION

A laminate of layered substances each containing two or more kinds of elements as constituent elements is contained in an ionic liquid containing a specific cation, and the ionic liquid containing the laminate is irradiated with one or both of sonic waves and electric waves. 3. The method for producing the layered substance-containing liquid according to claim 2 , wherein ultrasonic waves are used as the sonic waves claim 2 , and microwaves are used as the electric waves.4. The method for producing the layered substance-containing liquid according to claim 2 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation.5. The method for producing the layered substance-containing liquid according to claim 4 , wherein a liquid phase is collected from the ionic liquid having been subjected to the centrifugal separation.6. The method for producing the layered substance-containing liquid according to claim 3 , further comprising subjecting the ionic liquid irradiated with one or both of the sonic waves and the electric waves to centrifugal separation. The present invention relates to a layered substance-containing liquid containing an ionic liquid together with a layered substance, and a method for producing the same.A substance having a layered structure (layered substance) exhibits characteristic physical properties resulting from the layered structure, and many researchers have been conducting research on various layered substances.In particular, recently, there has been proposed to use a layered substance called “nanosheet” for improvement of performance of electronic devices (for example, refer to Non-Patent Literature 1). A laminate of a plurality of (two to five) layers of layered substances, as well as a single-layer (one layer) layered substance, is used as the nanosheet.Accordingly, attention has been focused on layered substances having various kinds of compositions, ...

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Номер записи: 49
12-05-2022 дата публикации

ENHANCED NB3SN SURFACES FOR SUPERCONDUCING CAVITIES

Номер: US20220151055A1
Автор: Grassellino Anna, Posen Sam
Принадлежит:

A system and method for treating a cavity comprises arranging a niobium structure in a coating chamber, the coating chamber being arranged inside a furnace, coating the niobium structure with tin thereby forming an NbSn layer on the niobium structure, and doping the NbSn layer with nitrogen, thereby forming a nitrogen doped NbSn layer on the niobium structure. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. A system for treating a workpiece , the system comprising:a furnace;a coating chamber configured inside the furnace, the coating chamber configured to house a workpiece;a vapor material provided in the coating chamber; anda separate heater for heating the vapor material.11. The system of further comprising:a housing configured to house the furnace.12. The system of further comprising:an endplate formed in the housing; andan access door formed in the endplate.13. The system of further comprising:at least one heat shield formed between the endplate and the furnace.14. The system of further comprising:a chamber support base for holding the coating chamber in the furnace.15. The system of further comprising:a chamber support sled affixed to the coating chamber, the chamber support sled being configured to engage with the chamber support base.16. The system of further comprising:a crucible for holding the vapor material, the crucible being proximate to the separate heater.17. The system of wherein the vapor material comprises tin.18. The system of wherein the workpiece comprises a niobium substrate.19. The system of further comprising:a cavity holder for holding the workpiece inside the coating chamber.20. A composition of matter comprising:{'sub': '3', 'a nitrogen doped NbSn layer formed on a surface of a niobium substrate.'} This patent application is a Divisional of U.S. patent application Ser. No. 16/784,092 entitled “METHODS AND SYSTEMS FOR TREATING SUPERCONDUCTING CAVITIES,” which was filed ...

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Номер записи: 50
23-04-2015 дата публикации

Coating solution for forming light-absorbing layer, and method for producing coating solution for forming light-absorbing layer

Номер: US20150108416A1
Автор: Hidenori Miyamoto, Koichi Misumi, Masaru Kuwahara
Принадлежит: Tokyo Ohka Kogyo Co Ltd

A coating solution for forming a light-absorbing layer of a CZTS solar cell, including a hydrazine-coordinated Cu chalcogenide complex component (A), a hydrazine-coordinated Sn chalcogenide complex component (B) and a hydrazine-coordinated Zn chalcogenide complex component (C) dissolved in dimethylsulfoxide; and a method of producing a coating solution forming a light-absorbing layer a CZTS solar cell, including preparing dimethylsulfoxide having a hydrazine-coordinated Cu chalcogenide complex dissolved therein as a first solution, dissolving a hydrazine-coordinated Sn chalcogenide complex in dimethylsulfoxide to obtain a second solution, dissolving a hydrazine-coordinated Zn chalcogenide complex in dimethylsulfoxide to obtain a third solution, and mixing together the first solution, the second solution and the third solution.

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Номер записи: 51
02-06-2022 дата публикации

DOPED TIN OXIDE PARTICLES AND DOPED TIN OXIDE SHELLS FOR CORE-SHELL PARTICLES

Номер: US20220169525A1
Автор: Jacobson Allan J., LEE Sang Ho, Lee T. Randall, Lee Tai-Chou, Li Chien-Hung, Medhi Riddhiman
Принадлежит:

The present disclosure relates to a strategy to synthesize antimony- and zinc-doped tin oxide particles with tunable band gap characteristics. The methods yield stable and monodispersed particles with great control on uniformity of shape and size. The methods produce undoped and antimony and zinc-doped tin oxide stand-alone and core-shell particles, both nanoparticles and microparticles, as well as antimony and zinc-doped tin oxide shells for coating particles, including plasmonic core particles. 1. A method for preparing doped tin oxide material , comprising:preparing a precursor solution, wherein the precursor solution consists of water, or wherein the precursor solution comprises core particles or core-shell particles;heating the precursor solution to at least 60° C.;adding a sodium stannate solution to the precursor solution to form a mixture comprising tin oxide material;preparing a doping solution, wherein the doping solution comprises an antimonate salt or a zinc salt;adding a specific amount of the doping solution to the mixture comprising tin oxide material to form a reaction mixture;heating the reaction mixture to at least 150° C. for a period of time; andcollecting doped tin oxide material from the reaction mixture, wherein the doped tin oxide material comprises stand-alone tin oxide particles, tin oxide shells surrounding core particles, or tin oxide core-shell particles, and wherein the doped tin oxide material further comprises antimony or zinc.2. The method of claim 1 , wherein the precursor solution consists of water and wherein the doped tin oxide material comprises stand-alone tin oxide particles doped with antimony or zinc.3. The method of claim 2 , wherein the stand-alone tin oxide particles are tin oxide nanoparticles or tin oxide microparticles.4. The stand-alone tin oxide particles doped with antimony or zinc prepared by the method of .5. The method of claim 1 , wherein the precursor solution comprises core particles or core-shell particles ...

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Номер записи: 52
11-04-2019 дата публикации

POLYMER DISPERSED LIQUID CRYSTAL FILM FOR VEHICLES AND A VEHICLE INCLUDING THE SAME

Номер: US20190107744A1
Автор: Eo Moon Jung, YUN Hee Young
Принадлежит:

A polymer dispersed liquid crystal film for vehicles includes an electrode unit, a first electrode provided on the electrode unit, a polymer layer provided between the electrode unit and the first electrode, and a plurality of liquid crystal molecules dispersed in the polymer layer. The electrode unit includes a resin layer and a mesh-type second electrode inserted into the resin layer. The upper surface of the second electrode is exposed to the outside of the resin layer. 1. A polymer dispersed liquid crystal film for vehicles , comprising:an electrode unit;a first electrode provided on the electrode unit;a polymer layer provided between the electrode unit and the first electrode; anda plurality of liquid crystal molecules dispersed in the polymer layer, a resin layer; and', 'a mesh-type second electrode inserted into the resin layer,, 'wherein the electrode unit includeswherein an upper surface of the second electrode is exposed to outside of the resin layer, and first liquid crystal molecules arranged in a first direction, when a voltage is applied between the first electrode and the second electrode;', 'second liquid crystal molecules arranged in a second direction intersecting the first direction when the voltage is applied between the first electrode and the second electrode; and', 'third liquid crystal molecules arranged in a thickness direction of the polymer dispersed liquid crystal film for vehicles, when the voltage is applied between the first electrode and the second electrode, the thickness direction intersecting with the first direction and the second direction., 'wherein the plurality of liquid crystal molecules include2. The polymer dispersed liquid crystal film for vehicles of claim 1 , wherein a lower surface of the second electrode is disposed within the resin layer.3. The polymer dispersed liquid crystal film for vehicles of claim 1 , wherein claim 1 , when the voltage is applied between the first electrode and the second electrode claim 1 , the ...

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Номер записи: 53
28-04-2016 дата публикации

OXIDE AND METHOD FOR FORMING THE SAME

Номер: US20160118254A1
Автор: Yamazaki Shunpei
Принадлежит:

An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma including ions of the sputtering gas in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with a target, so that flat-plate particles and atoms included in the target are separated from the target. Surfaces of the plurality of flat-plate particles are negatively charged in plasma. One of the flat-plate particles negatively charged is deposited with a surface facing a substrate. Another flat-plate particle is deposited in a region apart from the one flat-plate particle over the substrate while repelling the one flat-plate particle. An atom and an aggregate of atoms are inserted in a gap between the one flat-plate particle and the another flat-plate particle and grow in the lateral direction in the gap between the flat-plate particles, so that the gap between the one flat-plate particle and the another flat-plate particle is filled. 1. A method for forming an oxide with a sputtering method with use of a deposition chamber , a target in the deposition chamber , and a target , comprising the steps of:generating a potential difference between the target and the substrate after supplying a sputtering gas containing oxygen and/or a rare gas into the deposition chamber, thereby generating a plasma including an ion of the sputtering gas in the vicinity of the target;accelerating the ion of the sputtering gas moving toward the target by the potential difference;separating a plurality of flat-plate particles of a compound containing a plurality of elements, an atom included in the target, and an aggregate of the atoms included in the target from the target by collision of the accelerated ion of the sputtering gas with the target;negatively charging surfaces of the plurality of flat-plate particles that receive negative charge from the oxygen ion while flying in the plasma;depositing one of ...

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Номер записи: 54
18-04-2019 дата публикации

Process for Producing A Molded Polymeric Article

Номер: US20190112449A1
Автор: Hickenboth Charles R., Kryger Matthew J., Zawacky Steven R.
Принадлежит:

The present invention is directed to a process for producing a molded polymeric article including: 1. A process for producing a molded polymeric article comprising: (i) a mold release agent comprised of ionic fluoride and/or ionic fluoride precursor, and', '(ii) a polymeric organic material selected from the group consisting of thermosetting organic polymeric materials and thermoplastic organic materials;, '(a) providing an organic polymerizable composition comprising a reaction mixture of at least the following components(b) allowing the reaction mixture to undergo exothermic reaction;(c) providing a mold having a first part and a second part spaced one from the other thereby forming a cavity there between;(d) introducing the reaction mixture of (b) into the mold cavity wherein the reaction mixture is at a temperature of up to 130° C.;(e) holding the mold of (d) at a temperature and for a time sufficient to cure the reaction mixture thereby forming a molded polymeric article within the mold; and(f) removing the molded polymeric article from the mold.2. The process of claim 1 , wherein the mold release agent consists essentially of a fluoride-containing salt.3. The process of claim 1 , wherein the mold release agent is selected from boron trifluoride and/or a fluoride-containing material having the following structure (I):{'br': None, 'sub': n', '(4-n), 'MRF\u2003\u2003(I)'} M represents tin, bismuth, titanium, tantalum, cerium, zirconium, antimony, zinc, aluminum, yttrium, vanadium, or niobium;', 'each R independently represents a monovalent hydrocarbon group; and', 'n is an integer ranging from 1 to 3., 'where'}4. The process of claim 1 , wherein the mold release agent is selected from the group consisting of ammonium fluoride claim 1 , potassium fluoride claim 1 , cesium fluoride claim 1 , tin (II) fluoride claim 1 , sodium tetrafluoroborate claim 1 , tetrabutyl ammonium fluoride (trihydrate) claim 1 , and mixtures thereof.5. The process of claim 1 , wherein the ...

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Номер записи: 55
13-05-2021 дата публикации

ARTICLES WITH PATTERNED COATINGS

Номер: US20210139370A1
Автор: Hart Shandon Dee, Hu Guangli, Smith Nicholas James
Принадлежит:

Embodiments of a article including include a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided. 1. An article , comprising:a substrate including a surface; anda patterned coating disposed on the surface forming a coated surface,wherein, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater,wherein the patterned coating comprises a bimodal distribution of coating thickness, the bimodal distribution comprising a lower-mode thickness in the range from greater than about 0 nm to about 20 nm, and a higher-mode thickness in the range from about 50 nm to about 5000 nm,wherein the surface of the substrate has a surface area and the patterned coating covers at least about 20% of the surface area, andfurther wherein the patterned coating is continuous.2. The article according to claim 1 , wherein the lower-mode thickness is in the range from greater than about 0 nm to about 10 nm.3. The article according to claim 1 , wherein the patterned coating further comprises one or more of an elastic modulus of 50 GPa or greater and a hardness of 5 GPa or greater claim 1 , as measured with a Berkovich Indenter Hardness Test along indentation depths of about 100 nm or greater.4. The article according to claim 1 , wherein the patterned coating further comprises one or more of an elastic modulus of 60 GPa or greater and a hardness of 8 GPa or greater claim 1 , as measured with a Berkovich Indenter Hardness Test along indentation depths of about 100 nm or greater.5. The article according to claim 1 , wherein the article comprises an average flexural strength that is ...

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Номер записи: 56
05-05-2016 дата публикации

SYNTHESIS OF CsSnI3 BY A SOLUTION BASED METHOD

Номер: US20160122634A1
Автор: Ren Yuhang, Shu Kai, YU Chunhui, ZHANG Jin
Принадлежит: Sun Harmonics, Ltd

This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in an organic Perovskite precursor solvent. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices. 1. A process of forming CsSnIpowder , comprising the steps of:(a) forming a CsI solution by dissolving CsI powder of purity equal to 99.999% in an organic solvent consisting of at least one of N,N-dimethylformamide (DMF), γ-butyrolactone (GBL) and mixtures thereof;{'sub': 2', '2, '(b) forming a SnIsolution by dissolving SnIpowder of purity equal to 99% in an organic solvent consisting of at least one of N,N-dimethylformamide (DMF), γ-butyrolactone (GBL) and mixtures thereof;'}{'sub': 2', '2, '(c) adding the SnIsolution into the CsI solution to form a composite solution wherein the molar ratio of the SnIand CsI in said composite solution is approximately 1:1;'}{'sub': '3', '(d) stirring said composite solution for at least one hour to obtain a homogeneous CsSnIprecursor solution;'}(e) aging said precursor solution at least for a predetermined time period after said stirring step;{'sub': 3', '3', '3', '2', '6, '(f) heating said precursor solution following said aging step at a temperature within the range of 50° C. to 250° C. until all the solvent is evaporated to form CsSnIpowder exhibiting an XRD diffraction peak pattern for CsSnIcorresponding to the standard XRD-PDF card (43-1162) for the B-gamma-CsSnIphase without exhibiting an XRD diffraction peak pattern for CsSnI; and'}(g) the process steps (a) to (f) are performed in a substantially inert environment including a protective gas and water vapor and oxygen each at a level below 1 ppm.2. The process of claim 1 , wherein said substantially inert environment is created within a glove box.31. The process of claim () claim 1 , wherein said precursor solution is aged for 12 to 24 hours to form a homogeneous CsSnIprecursor solution.4. The process ...

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Номер записи: 57
09-04-2020 дата публикации

LI-SN-O-S COMPOUND, MANUFACTURING METHOD THEREFOR AND USE THEREOF AS ELECTROLYTE MATERIAL OF LI-ION BATTERIES, AND LI-SN-O-S HYBRID ELECTROLYTE

Номер: US20200112049A1
Автор: JAN Der-Jun, Kuo Dong-Hau, Lo Roger
Принадлежит:

A Li—Sn—O—S compound, a manufacturing method therefor and use thereof as an electrolyte material of Li-ion batteries, and a Li—Sn—O—S hybrid electrolyte are provided. The Li—Sn—O—S compound of the present invention is laminated Sn—O—S embedded with lithium ions. The Li—Sn—O—S compound is represented by the formula Li[LiSn(O,S)], where x>0. The manufacturing method for a Li—Sn—O—S compound includes the following steps of: (S) providing a Sn—O—S compound; (S) adding a lithium source into the Sn—O—S compound to form a Li—Sn—O—S precursor; and (S) performing calcination on the Li—Sn—O—S precursor in a vulcanization condition. 1. A Li—Sn—O—S compound , wherein the Li—Sn—O—S compound is laminated Sn—O—S embedded with lithium ions.2. The Li—Sn—O—S compound according to claim 1 , wherein the Li—Sn—O—S compound is represented by the following formula (I):{'br': None, 'sub': 3x', 'x', '1−x', '2, 'Li[LiSn(O,S)],\u2003\u2003Formula (I)'}wherein x>0.3. The Li—Sn—O—S compound according to claim 2 , wherein the Li—Sn—O—S compound is represented by Li[LiSn(O claim 2 ,S)].4. The Li—Sn—O—S compound according to claim 2 , wherein the Li—Sn—O—S compound is represented by LiSn(O claim 2 ,S).5. An electrolyte material of Li-ion batteries comprising the Li—Sn—O—S compound according to used as the electrolyte material.6. A Li—Sn—O—S hybrid electrolyte claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the Li—Sn—O—S compound according to ; and'}a gel polymer electrolyte.7. A manufacturing method for a Li—Sn—O—S compound claim 1 , comprising the following steps of:{'b': '1000', '(S) providing a Sn—O—S compound;'}{'b': '2000', '(S) adding a lithium source into the Sn—O—S compound to form a Li—Sn—O—S precursor; and'}{'b': '3000', '(S) performing calcination on the Li—Sn—O—S precursor in a vulcanization condition.'}81000. The manufacturing method for a Li—Sn—O—S compound according to claim 7 , wherein the step (S) sequentially comprises the following steps:{'b': '1100', '(S ...

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Номер записи: 58
27-05-2021 дата публикации

Carbon Nanotube Enhanced Silver Paste Thermal Interface Material

Номер: US20210159144A1
Автор: Chen Shuyi, Lin Zhigang, Tan Chunhu
Принадлежит:

A high performance, lead free, Ag paste thermal interface material (TIM) for die attachment and substrate bonding in electronic packaging includes: (i) multiscale silver particles, (ii) metal-coated carbon nanotubes (CNTs), (iii) a polymer, and (iv) a liquid carrier. The multiscale silver particles and metal-coated carbon nanotubes, which function as hybrid filler components, are uniformly dispersed within the TIM composition. The sintered TIM exhibits high density, high mechanical strength, and high thermal conductivity. The components of the liquid carrier including the solvent, binder, surfactants, and thinner are completely evaporated or burned off during sintering. Sintering of the TIM can be conducted at a relatively low temperature, without or with very low (<0.1 MPa) pressure, in open air and without vacuum or inert gas protection. The TIM can be utilized in substrate bonding not only on conventional metal-plated surfaces but also bare Cu substrate surfaces. 1. A thermal interface material composition that comprises: (i) multiscale silver particles , (ii) metal-coated carbon nanotubes , (iii) a polymer , and (iv) liquid carrier.2. The thermal interface material composition of wherein the multiscale silver particles comprise nano-size silver particles with diameters between 10-100 nm claim 1 , submicron-size silver particles with diameters between 0.1-1 μm claim 1 , and micron-size silver particles with diameters between 1-10 μm.3. The thermal interface material composition of wherein the weight ratio of nano-size silver particles claim 2 , submicron-size silver particles claim 2 , and micron-size silver particles is (1-5) to (1-9) to (1-9) claim 2 , respectively.4. The thermal interface material composition of further comprising Sn nanoparticles.5. The thermal interface material composition of wherein the metal-coated carbon nanotubes comprise carbon nanotubes that are coated with metal particles with diameters that range from 5 to 20 nm.6. The thermal ...

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Номер записи: 59
21-05-2015 дата публикации

APPARATUS FOR SYNTHETISING TIN DIOXIDE NANOPARTICLES AND METHOD FOR PRODUCING TIN DIOXIDE NANOPARTICLES

Номер: US20150139894A1
Автор: Fontanez Diego Manuel Ferreira Lusquinos, Moura Francisco Jose
Принадлежит:

The following invention relates to a novel and efficient nanoparticles synthesis reactor and process production. More particularly, the present invention is applied to the synthesis of nanostructured tin dioxide. The benefits provided by the invention can be seen in various gaseous reactions where occurs the formation of solid and gaseous phases. 1. A nanoparticles synthesis reactor comprising:a tubular section provided with an inlet, a gas distributor, which has a circular shape provided with an inlet, baffles and orifices;said tubular section is provided with a tubular region of reaction, a powder collector which has an outlet;wherein the orifices provide the perpendicular interaction among the reagents flows; {'br': None, 'i': A', 'B', 'C', 'D, '(g)+(g)→(s)+(g).'}, 'wherein the baffles provide means for the optimization of the gas flow around the reactor where the reagents flow, so that the following reaction will occur2. The reactor according to claim 1 , characterized as being used for the tin dioxide nanoparticles synthesis (SnO) using water vapor.3. The reactor according to claim 1 , characterized by the fact that A(g)=SnCl(g); B(g)=HO; C(s)=SnO(s); D(g)=HCl(g).4. The reactor according to claim 2 , characterized as being capable of maintaining the reaction temperature approximately 200° C.5. The reactor according to claim 1 , characterized by the fact that it provides the particle size reduction of the synthesized solids claim 1 , optimizing reaction conversion; temperature and/or reaction time.6. A tin dioxide nanoparticle production process comprising the following steps:(i) providing a distributor with water vapor through an inlet;(ii) optimizing water vapor flow through baffles;(iii) distributing the water vapor flow, uniformly, through orifices around a tubular section where tin tetrachloride gas flows.(iv) providing a tubular section with tin tetrachloride gas through an the inlet;(v) providing a perpendicular interaction between the tin tetrachloride ...

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Номер записи: 60
19-05-2016 дата публикации

ITO FILM, ITO POWDER USED IN MANUFACTURING SAME ITO FILM, MANUFACTURING METHOD OF ITO POWDER, AND MANUFACTURING METHOD OF ITO FILM

Номер: US20160137522A1
Автор: Takenoshita Ai, Yamasaki Kazuhiko, Yonezawa Takehiro
Принадлежит:

An ITO film having a band gap in a range of 4.0 eV to 4.5 eV. 1. (canceled)2. An ITO powder used in manufacture of an ITO film having: a band gap in a range of 4.0 eV to 4.5 eV; and an L*a*b* color tone in which L* is from 99.5 to 99.7 , a* is from −0.35 to −0.17 , and b* is from −0.24 to −0.06 , the ITO powder comprising a perse color tone L*a*b* in which L* is 30 or less , a* is less than 0 , and b* is less than 0.312-. (canceled)13. The ITO powder according to claim 2 , wherein a BET specific surface area of the ITO powder is 20 to 100 m/g.14. The ITO powder according to claim 2 , wherein a crystal particle size of the ITO powder determined by X-ray diffraction (XRD) is 5 to 30 nm. 1. Field of the InventionThe present invention relates to an ITO film having high optical transmittance in a visible light region, ITO powder used in manufacture of the same ITO film, a manufacturing method of the ITO powder, and a manufacturing method of an ITO film. In the present specification, ITO refers to Indium Tin Oxide.Priority is claimed on Japanese Patent Application No. 2012-132483, filed on Jun. 12, 2012, the content of which is incorporated herein by reference.2. Description of Related ArtAn indium tin oxide film (hereafter referred to as ITO film) used in the conventional art has a band gap of about 3.75 eV and high transparency in the wavelength range of visible light (for example, see Paragraph [0009] of Japanese Unexamined Patent Application, First Publication No. 2009-032699). Therefore, the ITO film has been widely used in a field requiring excellent optical characteristics such as application as a transparent electrode of a liquid crystal display (for example, see Paragraph [0006] of Japanese Unexamined Patent Application, First Publication No. 2005-054273) or a heat shielding material having high heat shielding performance (for example, see Paragraph [0002] of Japanese Unexamined Patent Application, First Publication No. 2011-116623).Although the conventional ITO ...

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Номер записи: 61
17-05-2018 дата публикации

SURFACE-FUNCTIONALIZED, ACIDIFIED METAL OXIDE MATERIAL IN AN ACIDIFIED ELECTROLYTE SYSTEM OR AN ACIDIFIED ELECTRODE SYSTEM

Номер: US20180138506A1
Автор: Johnson Paige L.
Принадлежит: HHeLi, LLC

Described herein are acidified metal oxide (“AMO”) materials useful in applications such as a battery electrode or photovoltaic component, in which the AMO material is used in conjunction with one or more acidic species. Advantageously, batteries constructed of AMO materials and incorporating acidic species, such as in the electrode or electrolyte components of the battery exhibit improved capacity as compared to a corresponding battery lacking the acidic species. 1. A battery comprising:a first electrode, wherein the first electrode comprises an acidified metal oxide (AMO) nanomaterial;a second electrode; andan electrolyte positioned between the first electrode and the second electrode, wherein the electrolyte comprises an acidic species dissolved in a solvent.2. The battery of claim 1 , wherein the AMO nanomaterial comprises tin oxide claim 1 , titanium dioxide claim 1 , iron oxide claim 1 , zirconium oxide claim 1 , or any combination of these.3. The battery of claim 1 , wherein the AMO nanomaterial is surface functionalized by one or more electron withdrawing groups selected from the group consisting of Cl claim 1 , Br claim 1 , BO claim 1 , SO claim 1 , PO claim 1 , NO claim 1 , CHCOO claim 1 , CO claim 1 , and CHO.4. The battery of claim 1 , wherein the first electrode further comprises a second acidic species.5. The battery of claim 1 , wherein the second electrode comprises graphite claim 1 , lithium metal claim 1 , sodium metal claim 1 , lithium cobalt oxide claim 1 , lithium titanate claim 1 , lithium manganese oxide claim 1 , lithium nickel manganese cobalt oxide (NMC) claim 1 , lithium iron phosphate claim 1 , lithium nickel cobalt aluminum oxide (NCA) claim 1 , or any combination of these.6. The battery of claim 1 , wherein the acidic species comprises one or more organic acids selected from the group consisting of oxalic acid claim 1 , acetic acid claim 1 , citric acid claim 1 , maleic acid claim 1 , methylmalonic acid claim 1 , glutaric acid claim 1 , ...

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Номер записи: 62
10-06-2021 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20210175073A1
Автор: CHO Younjoung, CHOI Jiyu, PARK Gyu-hee, Ryu Seung-Min
Принадлежит:

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: 2. The method as claimed in claim 1 , wherein M2 is Sn.3. The method as claimed in claim 1 , further comprising purging the co-reactant after providing the co-reactant to the metal precursor.4. The method as claimed in claim 1 , wherein the metal precursor includes a metal halide compound or an organometallic compound.5. The method as claimed in claim 1 , wherein the reactant includes one or more of NH claim 1 , NH claim 1 , or N.62. The method as claimed in claim 1 , wherein the metal nitride layer is formed to have a concentration of M that is about 0.1 at % to about 10 at %.7. The method as claimed in claim 1 , wherein forming the metal nitride layer includes performing an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.8. The method as claimed in claim 1 , wherein a process temperature for forming the metal nitride layer is about 150° C. to about 400° C.9. The method as claimed in claim 1 , wherein a process pressure for forming the metal nitride layer is between 0 Torr and about 100 Torr.10. The method as claimed in claim 1 , wherein:the metal precursor is a titanium precursor, andthe metal nitride layer is formed to have an atomic ratio of nitrogen to titanium that is 0.9 to 1.1.12. The method as claimed in claim 11 , wherein M2 is Sn.13. The method as claimed in claim 11 , wherein the first reactant includes one or more of NH claim 11 , NH claim 11 , or N.142. The method as claimed in claim 11 , wherein the first metal nitride layer is formed to have a concentration of M that is about 0.1 at % to about 10 at %.15. The method as claimed in claim 11 , further comprising forming interconnection ...

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Номер записи: 63
02-06-2016 дата публикации

MESOPOROUS MATERIALS AND PROCESSES FOR PREPARATION THEREOF

Номер: US20160151767A1
Автор: Jin Lei, Kuo Chung-Hao, Poyraz Altug Suleyman, Suib Steven L.
Принадлежит:

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride and metalloid oxide, sulfide, selenide or telluride. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous material. Mesoporous materials and a method of tuning structural properties of mesoporous materials. 1383-. (canceled)384. A process for preparing a mesoporous material , said process comprising:preparing an acidic mixture by mixing one or more metal precursors, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant;aging the acidic mixture at a temperature and for a period of time sufficient to form a powder, film or gel; andheating the powder, film or gel at a temperature and for a period of time sufficient to form the mesoporous material.385. The process of wherein the mesoporous material comprises an oxide claim 384 , a sulfide claim 384 , a selenide or a telluride of the following:a transition metal selected from the group consisting of Cr, Zr, Nb, Hf and Ta; a Lanthanide selected from the group consisting of Nd, Sm, Ce and Gd; a post-transition metal comprising Sn; or a mixed metal or a solid acid selected from the group ...

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Номер записи: 64
02-06-2016 дата публикации

MESOPOROUS MATERIALS AND PROCESSES FOR PREPARATION THEREOF

Номер: US20160151768A1
Автор: Jin Lei, Kuo Chung-Hao, Poyraz Altug Suleyman, Suib Steven L.
Принадлежит:

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials. 1556-. (canceled)557. A process for preparing a mesoporous material , said process comprising:providing a micellar solution comprising one or more metal precursors, one or more surfactants, one or more interface modifiers, one or more hydrotropic or lyotropic ion precursors, and optionally one or more organic and/or inorganic additives; wherein said micellar solution comprises a dispersion of micelles in which at least a portion of said one or more metal precursors are solubilized in the micelles; andheating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material.558. The process of which is a sol-gel micelle based process.559. The process of in which micellization and inter-micellar interaction are controlled by said one or more metal precursors claim 557 , one or more surfactants claim 557 , ...

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Номер записи: 65
16-05-2019 дата публикации

ARTICLES WITH PATTERNED COATINGS

Номер: US20190144331A1
Автор: Hart Shandon Dee, Hu Guangli, Smith Nicholas James
Принадлежит:

Embodiments of a article including include a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided. 143-. (canceled)44. An article , comprising: a patterned coating with a bimodal distribution of coating thickness , the bimodal distribution comprising a lower-mode thickness in a range from 10 nm to 90 nm , and a higher-mode thickness in a range from about 50 nm to about 5000 nm.45. The article of claim 44 , wherein claim 44 , when a strain is applied to the article claim 44 , the patterned coating has a first region and a second region claim 44 , and wherein the first region comprises a first tensile stress and the second region comprises a second tensile stress greater than the first tensile stress.46. The article of claim 44 , further comprising a substrate claim 44 , whereby the patterned coating is disposed on a surface of the substrate.47. The article of claim 46 , wherein claim 46 , when a strain is applied to the article claim 46 , the substrate comprises a maximum substrate tensile stress and the patterned coating has at least one local region comprising a local tensile stress that is less than the maximum substrate tensile stress.48. The article of claim 46 , wherein claim 46 , when a strain is applied to the article claim 46 , the substrate comprises a maximum substrate tensile strain and the patterned coating has at least one local region comprising a local tensile strain that is less than the maximum substrate tensile strain.49. The article of claim 44 , wherein the lower-mode thickness comprises a full-width- at half-maximum (FWHM) of about 1 nm or less and the higher-mode thickness ...

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Номер записи: 66
16-05-2019 дата публикации

Coating film-forming composition and process for producing the same

Номер: US20190144707A1
Автор: Daiki IIJIMA, Masayoshi Suzuki, Natsumi Murakami, Taku Kato, Tomoki Furukawa, Yoshinari Koyama
Принадлежит: Nissan Chemical Corp

A coating film-forming composition includes a hydrolysis-condensation product of a hydrolyzable silane and fine inorganic particles subjected to a special dispersion treatment, that can be formed into a highly heat-resistant, highly transparent coating film capable of exhibiting a high refractive index and having a large thickness and excellent storage stability as a coating composition; and a process for producing the coating film-forming composition.

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Номер записи: 67
17-06-2021 дата публикации

METHOD FOR PRODUCING METAL OXIDE DISPERSION LIQUID AND METHOD FOR PRODUCING INFRARED-RADIATION-SHIELDING FILM

Номер: US20210179440A1
Автор: Higano Satoko
Принадлежит:

According to this method, a fatty acid of CnHO(n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a δP value higher by 5 to 12 than the δP value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated. 1. A method for producing a dispersion liquid in which metal oxide secondary particles formed by metal oxide primary particles agglomerated together are dispersed in a hydrophobic solvent as a final dispersing solvent , the method comprising:{'sub': n', '2n', '2, '(a) a step of mixing, by a direct method or a metathesis method, a fatty acid of CHO(n=5 to 14) with each of metal sources including a plurality of kinds of metals selected from the group consisting of Zn, In, Sn, Sb, and Al, metal oxides of the metals, metal hydroxides of the metals, and thereby obtaining a mixture of a plurality of kinds of fatty acid metal salts;'}(b) a step of heating the mixture of fatty acid metal salts at a temperature of 130° C. to 250° C., subsequently cooling the mixture, and thereby obtaining a metal soap, which is a precursor of the metal oxide primary particles;(c) a step of heating the precursor of the metal oxide primary particles at a temperature of 200° C. to 350° C., and thereby dispersing the metal oxide primary particles in a melt of the precursor;(d) a step of adding a washing solvent that has, when a polarization term of Hansen solubility parameter (HSP) of the solvent is designated as δP, a δP value higher by 5 to 12 than the δP ...

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Номер записи: 68
11-06-2015 дата публикации

NANOMETRIC TIN-CONTAINING METAL OXIDE PARTICLE AND DISPERSION, AND PREPARATION METHOD AND APPLICATION THEREOF

Номер: US20150160379A1
Автор: Chen Jianfeng, Shen Zhigang, SHER Hock Sing, Soh Wei Kian, WANG Aici, YUN Sung Lai Jimmy, Zhang Jiyao, ZHONG Jie
Принадлежит:

There is disclosed a tin-containing metal oxide nanoparticle, which has an index of dispersion degree less than 7 and a narrow particle size distribution which is defined as steepness ratio less than 3. There is disclosed dispersion, paint, shielding film and their glass products which comprise the said nanoparticles. Besides, there are also disclosed processes of making the tin-containing metal oxide nanoparticle and their dispersion. The tin-containing metal oxide nanoparticles and their dispersion disclosed herein may be applied on the window glass of houses, buildings, vehicles, ships, etc. There is provided an excellent function of infrared blocking with highly transparent, and to achieve sunlight controlling and thermal radiation controlling. 139-. (canceled)40. Tin-containing metal oxide nano-particles , said tin-containing metal oxide including tin element and a metallic element other than tin , wherein the tin-containing metal oxide nano-particles have a particle diameter distribution as defined with an index of dispersion degree of less than 7 and a steepness ratio of less than 3.41. The tin-containing metal oxide nano-particles according to claim 40 , wherein said tin-containing metal oxide nano-particles are coated on surface with a surfactant claim 40 , said surfactant is selected from a non-silane surface modifying agent claim 40 , a silane coupling agent claim 40 , a titanate coupling agent claim 40 , or a mixture thereof claim 40 , preferably the non-silane surface modifying agent is selected from sodium dodecyl sulphate claim 40 , sodium lauryl sulphate claim 40 , sodium laurate claim 40 , sodium oleate claim 40 , sodium naphthenate claim 40 , sodium stearate claim 40 , sodium abietate claim 40 , sodium iso-octoate claim 40 , sodium linoleate claim 40 , sodium caproate claim 40 , sodium ricinate claim 40 , ethyl acetate claim 40 , sodium acetate claim 40 , dioctylsodium sulphosuccinate claim 40 , polyoxyethylene sorbitan monooleate claim 40 , ...

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Номер записи: 69
01-06-2017 дата публикации

ANTIMONY BASED ANODE MATERIAL FOR RECHARGEABLE BATTERIES AND PREPARATION METHOD

Номер: US20170155140A1
Автор: KOVALENKO Maksym V., KRAVCHYK Kostiantyn, MENG He, WALTER Marc
Принадлежит: BELENOS CLEAN POWER HOLDING AG

An antimony based anode material for a rechargeable battery includes nanoparticles of composition SbMO, where M is an element selected from the group consisting of Sn, Ni, Cu, In, Al, Ge, Pb, Bi, Fe, Co, and Ga, with 0≦x<2 and 0≦y≦2.5+2x. The nanoparticles form a substantially monodisperse ensemble with an average size not exceeding a value of 30 nm and by a size deviation not exceeding 15%. A method for preparing the antimony based anode material is carried out in situ in a non-aqueous solvent and starts by reacting an antimony salt and an organometallic amide reactant and oleylamine. 1. An antimony based anode material for a rechargeable battery , the anode material comprising nanoparticles of composition SbMO , where M is an element selected from the group consisting of Sn , Ni , Cu , In , Al , Ge , Pb , Bi , Fe , Co , and Ga , with 0≦x<2 and 0≦y≦2.5+2x , wherein the nanoparticles form a substantially monodisperse ensemble with an average size between 5 nm and 30 nm and a size deviation not exceeding 15%.2. The material according to claim 1 , wherein the nanoparticles are coated with a capping species.3. The material according to claim 1 , wherein the nanoparticles are composed of Sb.4. The material according to claim 1 , wherein the nanoparticles are composed of SbSn.5. The material according to claim 4 , wherein x is 1.5.6. The material according to claim 1 , wherein the average size of the nanoparticles is between 10 nm and 25 nm.7. The material according to claim 6 , wherein the average size of the nanoparticles is between 15 nm and 25 nm.8. The material according to claim 1 , wherein the full width at half maximum (FWHM) of a size distribution of the average size is below 11%.9. The material according to claim 1 , wherein the full width at half maximum (FWHM) of a size distribution of the average size is below 10%.10. The material according to claim 1 , wherein the full width at half maximum (FWHM) of a size distribution of the average size is in a range of ...

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Номер записи: 70
30-05-2019 дата публикации

TRANSPARENT CONDUCTOR

Номер: US20190160783A1
Автор: Sato Yoshinori, SHINGAI Hiroshi, TAMAGAWA Yoshihisa, Tanabe Yoshihiko
Принадлежит: TDK Corporation

A transparent conductor includes: a transparent resin base material; a first metal oxide layer; a metal layer including a silver alloy; and a second metal oxide layer, in this order. The first metal oxide layer contains at least one of tin oxide and niobium oxide. When the tin oxide and the niobium oxide are respectively set in terms of SnO2 and Nb2O5, a molar basis content of the total of SnO2 and Nb2O5 with respect to the total of metal oxides contained in the first metal oxide layer is greater than a molar basis content of the total of SnO2 and Nb2O5 with respect to the total of metal oxides contained in the second metal oxide layer, and the content in the first metal oxide layer is greater than or equal to 45 mol %. 1. A transparent conductor , comprising:a transparent resin base material;a first metal oxide layer;a metal layer including a silver alloy; anda second metal oxide layer, in this order,wherein the first metal oxide layer contains at least one of tin oxide and niobium oxide, and{'sub': 2', '2', '5, 'when the tin oxide and the niobium oxide are respectively set in terms of SnOand NbO,'}{'sub': 2', '2', '5', '2', '2', '5, 'a molar basis content of the total of SnOand NbOwith respect to the total of metal oxides contained in the first metal oxide layer, is greater than a molar basis content of the total of SnOand NbOwith respect to the total of metal oxides contained in the second metal oxide layer, and'}the content in the first metal oxide layer is greater than or equal to 45 mol %.2. The transparent conductor according to claim 1 ,wherein the first metal oxide layer is not dissolved in an etching liquid containing a phosphoric acid, an acetic acid, a nitric acid, and a hydrofluoric acid, in which the second metal oxide layer is dissolved.3. The transparent conductor according to claim 1 ,{'sub': 2', '2, 'wherein the first metal oxide layer contains tin oxide, and when the tin oxide is set in terms of SnO, a content of SnOwith respect to the total of ...

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Номер записи: 71
30-05-2019 дата публикации

NEAR-INFRARED ABSORBING FINE PARTICLE DISPERSION LIQUID, NEAR-INFRARED ABSORBING FINE PARTICLE DISPERSION BODY, NEAR-INFRARED ABSORBING TRANSPARENT SUBSTRATE, NEAR-INFRARED ABSORBING LAMINATED TRANSPARENT SUBSTRATE

Номер: US20190161361A1
Автор: CHONAN Takeshi, TSUNEMATSU Hirofumi
Принадлежит: SUMITOMO METAL MINING CO., LTD.

There is provided a near-infrared absorbing fine particle dispersion liquid containing near-infrared absorbing fine particles, thereby as well as exhibiting near-infrared light absorption properties and suppressing a scorching sensation on the skin when used in structures such as window materials and the like, also enabling usage of communication devices, imaging devices, sensors and the like that employ near-infrared light through these structures, a near-infrared absorbing film or a near-infrared absorbing glass, a dispersion body or a laminated transparent substrate, the dispersion liquid containing at least composite tungsten oxide fine particles and antimony doped tin oxide fine particles and/or tin doped indium oxide fine particles as near-infrared absorbing fine particles, wherein in the composite tungsten oxide fine particles, an average value of a transmittance in a wavelength range of 800 to 900 nm is 30% or more and 60% or less, and an average value of a transmittance in a wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at a wavelength of 2100 nm is 22% or less, when a visible light transmittance is 85% at the time of calculating only light absorption by the composite tungsten oxide fine particles, and containing mixed particles of the composite tungsten oxide fine particles and antimony-doped tin oxide fine particles and/or tin-doped indium oxide fine particles dispersed in a liquid medium, wherein the liquid medium is selected from rater, an organic solvent, an oil and fat, a liquid resin, a liquid plasticizer for plastics, or a mixture thereof, wherein when a visible light transmittance is adjusted to 85% at the time of calculating only light absorption by the near-infrared absorbing fine particles in the dispersion liquid by diluting with the liquid medium, an average value of a transmittance in the wavelength range of 800 to 900 nm is 30% or more and 60% or less, an average value of a transmittance in the wavelength range of ...

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Номер записи: 72
30-05-2019 дата публикации

NANOPARTICLE ASSEMBLIES AND METHOD FOR PRODUCING NANOPARTICLE ASSEMBLIES

Номер: US20190165190A1
Автор: IWAHORI Koichiro, NAKAZUMI Makoto, NAMIHIRA Takao, NISHI Yasutaka
Принадлежит:

The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 μm or less. 1. A method for producing a nanoparticle assembly , comprising:mist generation in which a solution containing a nanoparticle is prepared and mist of the solution is generated;plasma generation in which a plasma is generated between a first electrode and a second electrode; andnanoparticle assembly production in which the mist is supplied between the first electrode and the second electrode and in which a nanoparticle assembly is generated,{'sub': 391', '357', '391', '357, 'wherein, in the plasma generation, the plasma has a ratio of emission intensities (I/I) of 0.072 or more and less than 0.08, where Iis an emission intensity at a wavelength of 391 nm and Iis an emission intensity at a wavelength of 357 nm,'}the nanoparticle has an average primary particle size of 60 nm or less, andthe nanoparticle assembly has a diameter of more than 500 nm to 5 μm or less.2. The method for producing a nanoparticle assembly according to claim 1 ,wherein the average primary particle size is more than 10 nm and 50 nm or less, andthe diameter of the nanoparticle assembly is more than 800 nm.3. The method for producing a nanoparticle assembly according to claim 1 ,wherein the average primary particle size is more than 20 nm and 40 nm or less, andthe diameter of the nanoparticle assembly is more than 1 μm.4. The method for producing a nanoparticle assembly according to claim 1 ,wherein the nanoparticle is an oxide.5. The method for producing a nanoparticle assembly according to claim 1 ,wherein the nanoparticle is a metal.6. The method for producing a nanoparticle assembly according to claim 4 , wherein the oxide is a tin-doped indium oxide (ITO).7. The method for producing a nanoparticle assembly according to claim 4 , wherein the oxide is a gallium-doped zinc oxide (GZO).8. The method for ...

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Номер записи: 73
29-09-2022 дата публикации

Battery with Novel Components

Номер: US20220310993A1
Автор: Johnson Paige L., Neff Jonathan G.
Принадлежит:

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. 1. A battery cell comprising an anode , an electrolyte , and a cathode , wherein one of the anode or cathode comprises at least one solid metal oxide nanomaterial including a surface that is acidic but not superacidic , the surface having a pH<5 when re-suspended , after drying , in water at 5 wt % and a Hammet function H>−12.2. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <100 nm in size.3. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <20 nm in size.4. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial has at least one particle dimension <10 nm in size.5. The battery cell of claim 1 , wherein the solid metal oxide nanomaterial includes a substantially monodispersed nanoparticulate form.6. The battery cell of claim 1 , wherein the surface has a pH<4 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.7. The battery cell of claim 1 , wherein the surface has a pH<3 when re-suspended claim 1 , after drying claim 1 , in water at 5 wt % and a Hammet function H>−12.8. A battery cell having an electrode comprising at least one solid metal oxide material claim 1 , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200.9. The battery cell of claim 8 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 8 , having a pH<7 when suspended in an aqueous solution at 5 wt % and a Hammet function H>−12.10. The battery ...

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Номер записи: 74
25-06-2015 дата публикации

Bi-Functional Catalysts for Oxygen Reduction and Oxygen Evolution

Номер: US20150180046A1
Автор: Andersen Nalin, Atanassov Plamen B, Serov Alexey
Принадлежит: STC.UNM

A porous metal-oxide composite particle suitable for use as a oxygen reduction reaction or oxygen evolution reaction catalyst and sacrificial support based methods for making the same. 1. A method for forming a porous metal oxide material comprising:providing sacrificial template particles;reacting one or more metal precursors and an oxide precursor onto the sacrificial template particles to produce coated template particles;heat treating the coated template particles; andremoving the sacrificial template particles to produce a highly dispersed, self-supported, high surface area electrocatalytic material.2. The method of wherein the metal is a transition metal.3. The method of wherein at least one of the metal precursors is a metal citrate or metal nitrate.4. The method of wherein the step of reacting one or more metal precursors and an oxide precursor onto the sacrificial template particles comprises mixing a colloidal suspension of template particles with a solution containing a transition metal citrate or nitrate and sodium nitrate.5. The method of wherein the step of heat treating the coated template particles comprises calcination.6. The method of wherein the step of reacting one or more metal precursors and an oxide precursor onto the sacrificial template particles comprises mixing a colloidal suspension of template particles claim 1 , sucrose and urea with a solution containing transition metal precursors.7. The method of wherein the step of heat treating the coated template particles comprises pyrolyzation claim 1 , followed by calcination.8. The method of wherein the step of removing the sacrificial template particles comprises chemical etching.9. The method of wherein the chemical etchant is HF.10. The method of wherein the metal precursor is selected from the group consisting of cobalt nitrate claim 1 , zirconium oxynitrate hydrate claim 1 , indium chloride tetrahydrate claim 1 , venadyl sulfate hydrate claim 1 , praseodymium nitrate hexahydrate claim 1 , ...

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Номер записи: 75
21-06-2018 дата публикации

AQUEOUS-BASED METHOD OF PREPARING METAL CHALCOGENIDE NANOMATERIALS

Номер: US20180170754A1
Автор: Dou Shixue, Han Chao, Li Zhen
Принадлежит:

Provided is a method for producing metal chalcogenide nanomaterials, comprising the steps of forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt; mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and separating the produced metal chalcogenide nanomaterials from the aqueous solution. Also provided is a method of converting metal chalcogenide nanoparticles into metal chalcogenide nanotubes or nanosheets, comprising the steps of forming an aqueous mixture of a chalcogen precursor, a reducing agent and the metal chalcogenide nanoparticles in water; and forming the nanotubes or nanosheets by stirring or not stirring the aqueous mixture, respectively. 1. A method for producing metal chalcogenide nanomaterials , comprising the steps of:forming an aqueous solution of a chalcogen precursor, a reducing agent and a metal salt;mixing the aqueous solution for a duration of time at a reaction temperature of between about 10° C. to about 40° C., inclusively; and,separating a produced metal chalcogenide nanomaterial from the aqueous solution.2. The method of claim 1 , wherein the metal chalcogenide nanomaterial is produced without use of a surfactant.3. The method of claim 1 , wherein the reaction temperature is between about 10° C. to about 30° C. claim 1 , inclusively.4. The method of claim 1 , wherein the reaction temperature is between about 20° C. to about 30° C. claim 1 , inclusively.5. The method of claim 1 , wherein the reaction temperature is about room temperature.6. The method of claim 5 , wherein external heating is not used.7. The method of claim 1 , wherein the produced metal chalcogenide nanomaterial has a formula of ME claim 1 , where:M is Bi, Cu, Pb, Ag, In, Sn, or Sb;E is O, S, Se or Te when M is Cu, or E is S, Se or Te when M is Bi, Pb, Ag, In, Sn, or Sb; and1≤x≤2 and 1≤y≤3.8. The method of claim 1 , wherein the produced metal chalcogenide ...

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Номер записи: 76
21-06-2018 дата публикации

TUNGSTEN-DOPED STANNIC OXIDE COLLOIDAL SUSPENSION AND METHOD FOR PREPARING THE SAME

Номер: US20180171158A1
Автор: Pega Stephanie, Shi Liyi, Wang Zhuyi, YUAN Shuai, ZHAO Jian, Zhao Yin
Принадлежит:

A colloidal suspension of tungsten-doped SnOparticles is provided. It also pertains to the method for preparing such colloidal suspension and to its uses, especially in the manufacture of an antistatic coating for an optical article, such as an ophthalmic lens. 1. A colloidal suspension of tungsten-doped stannic oxide nanoparticles having a W:Sn molar ratio higher than or equal to 0.0004.2. The colloidal suspension according to claim 1 , wherein said W:Sn molar ratio is lower than or equal to 0.15 claim 1 , in particular lower than or equal to 0.05 claim 1 , particularly lower than or equal to 0.03.3. The colloidal suspension according to claim 1 , wherein said nanoparticles are dispersed in water claim 1 , alcohols selected from methanol claim 1 , ethanol claim 1 , propanol or butanol claim 1 , glycols claim 1 , glycol ethers claim 1 , ketones or a mixture thereof claim 1 , preferably in a mixture of water and alcohol selected from methanol claim 1 , ethanol claim 1 , propanol or butanol.4. The colloidal suspension according to claim 1 , wherein the mean particle size of said nanoparticles is from 4 to 20 nm claim 1 , in particular from 6 nm to 12 nm.5. The colloidal suspension according to claim 1 , wherein tungsten is included in the lattice of tin oxide.6. The colloidal suspension according to claim 1 , wherein said suspension further comprises oxalic acid dihydrate.7. The colloidal suspension according to claim 1 , wherein said suspension further comprises polyvinylpyrrolidone.8. A substrate coated with a composition comprising the colloidal suspension according to .9. The substrate according to claim 8 , wherein said substrate is an optical article claim 8 , such as an ophthalmic or an optical lens claim 8 , or a display or touch screen.10. The substrate according to claim 8 , wherein the charge decay time of said substrate is lower than 1 s claim 8 , preferably lower than 500 ms claim 8 , more preferably lower than 200 ms.11. A method for producing the ...

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Номер записи: 77
02-07-2015 дата публикации

CONTINUOUS MICROWAVE-ASSISTED SEGMENTED FLOW REACTOR FOR HIGH-QUALITY NANOCRYSTAL SYNTHESIS

Номер: US20150182936A1
Автор: Albuquerque Gustavo Henrique, Chandran Padmavathi, Chang Chih-Hung, Fitzmorris Bob C., Flynn Brendan Thomas, Herman Gregory Scott, Hostetler Eric Bradley, KIM Ki-Joong, Oleksak Richard Paul, Paul Brian Kevin, Peterson Daniel Alan
Принадлежит:

Systems and methods for synthesizing high-quality nanocrystals via segmented, continuous flow microwave-assisted reactor were developed. 1. A continuous , microwave-assisted , segmented flow reactor system for nanocrystal synthesis , comprising:a. a nanocrystal precursor source configured to comprise a nanocrystal precursor solution;b. a microwave reactor in fluid communication with the nanocrystal precursor source and having a fluid passageway passing through the microwave reactor configured to allow the nanocrystal precursor solution to pass therethrough; andc. a segmentation fluid source disposed in fluid communication with the fluid passageway at a location between the nanocrystal precursor source and the microwave reactor, the segmentation fluid source configured to provide a segmentation fluid that is immiscible with the nanocrystal precursor solution.2. The system of claim 1 , wherein the segmentation fluid source comprises a valve.3. The system of claim 1 , wherein the segmentation fluid source comprises a pump.4. The system of claim 1 , wherein the segmentation fluid comprises a gas claim 1 , a liquid claim 1 , or a combination thereof.5. The system of claim 1 , wherein the segmentation fluid comprises a gas claim 1 , a liquid claim 1 , or a combination thereof where bubble or droplet flow occurs.6. The system of claim 1 , wherein the nanocrystal precursor solution comprises Ni claim 1 , Cu claim 1 , In claim 1 , S claim 1 , Ga claim 1 , Se claim 1 , Pb claim 1 , Sn claim 1 , Zn claim 1 , P claim 1 , Cd claim 1 , Te claim 1 , Ge claim 1 , Si claim 1 , Hg claim 1 , O claim 1 , Ag claim 1 , Sb claim 1 , Bi claim 1 , Na claim 1 , or a combination thereof.7. The system of claim 1 , wherein the nanocrystal precursor source comprises a first nanocrystal precursor source and second nanocrystal precursor source; and the nanocrystal precursor solution comprises a first nanocrystal precursor solution and a second nanocrystal precursor solution.8. The system of claim ...

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Номер записи: 78
28-05-2020 дата публикации

METHOD FOR PREPARING GRAPHENE-TIN OXIDE NANOCOMPOSITE, AND GRAPHENE-TIN OXIDE NANOCOMPOSITE

Номер: US20200166469A1
Автор: BANG Jae Hoon, CHANG Ki Seok, CHOI Myong Sik, Kang Han Saem, KANG Sung Yong, KIM Hyoun Woo, KIM Wook Sung, Kwon Yong Jung, RYU Sung Pil
Принадлежит:

A method of manufacturing a graphene-tin oxide nanocomposite comprises dispersing graphene and tin oxide in an organic solvent to prepare a dispersion solution, drying the dispersion solution to obtain a powdery mixture, and irradiating the mixture with microwaves to obtain a graphene-tin oxide nanocomposite. Irradiation of graphene and tin oxide with microwaves results in the simplification of the manufacturing process of graphene-tin oxide nanocomposites and a decrease in manufacturing time and cost, and produce graphene-tin oxide nanocomposites at low temperatures. Further, the graphene-tin oxide nanocomposite with improved sensitivity to NO2 gas may be produced. 1. A method of manufacturing a graphene-tin oxide nanocomposite , the method comprising:dispersing graphene and tin oxide in an organic solvent to prepare a dispersion solution;drying the dispersion solution to obtain a powdery mixture; andirradiating the powdery mixture with microwaves to obtain the graphene-tin oxide nanocomposite.2. The method of claim 1 , wherein the graphene and the tin oxide are in a powder form.3. The method of claim 1 , wherein a solid content ratio of the graphene and the tin oxide ranges from 0.1:99.9 to 5:95.4. The method of claim 1 , wherein the microwave is irradiated at an output of 500 W to 2000 W.5. The method of claim 1 , wherein the microwave is irradiated for 1 minute to 10 minutes.6. The method of claim 1 , wherein the organic solvent includes an alcohol-based solvent.7. The method of claim 1 , further comprising:dispersing the graphene-tin oxide nanocomposite in an organic solvent; andcoating the dispersed nanocomposite solution on a substrate.8. (canceled)9. The nanocomposite of claim 1 , wherein the graphene-tin oxide nanocomposite comprises a primary particle of tin oxide and a secondary particle of tin oxide.10. The nanocomposite of claim 9 , wherein a tin atom is inserted at an interstitial site.11. A gas sensor including the graphene-tin oxide nanocomposite ...

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Номер записи: 79
06-06-2019 дата публикации

KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE

Номер: US20190172711A1
Автор: DAHL Søren, NERLOV Jesper, SCHJØDT Niels Christian
Принадлежит: Haldor Topsoe A/S

A method of producing a kesterite material of CZTS, CZTSe or CZTSSe type, including the steps of: a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio, b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof, c) carrying out a precipitation reaction by mixing the acidic and the basic solution, d) drying the precipitate thereby providing a precursor for the kesterite material, and e) sulfurizing the precursor of step d to provide the kesterite material. Also, a precursor for a kesterite material of CZTS, CZTSe or CZTSSe type. 1. A method of producing a kesterite material of CZTS , CZTSe or CZTSSe type , comprising the steps of:a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio,b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof,c) carrying out a precipitation reaction by mixing said acidic and said basic solution, thereby obtaining a precipitate,d) washing and heat treating said precipitate thereby providing a precursor for the kesterite material, ande) sulfurizing the precursor of step d to provide the kesterite material.2. The method according to claim 1 , wherein the salts used for the acidic solution are nitrates claim 1 , halides claim 1 , sulfates claim 1 , carboxylates or combinations thereof.3. The method according to claim 1 , wherein the copper salt is copper (II) nitrate and the zinc salt is zinc (II) nitrate.4. The method according to claim 1 , wherein said acidic solution further ...

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Номер записи: 80
13-06-2019 дата публикации

Synthesis of and Uses of Alkaline Earth Metal Stannates

Номер: US20190177177A1
Автор: CROSSLEY David
Принадлежит: William Blythe Limited

The present invention provides a particularly advantageous form of alkaline earth metal hydroxystannate and alkaline earth metal stannate exhibiting a BET specific surface area of from 20 to 200 m2/g. A method of producing such particulate material and evidence of its benefits in use such as in at a reduction in a polymer sample at elevated temperature is also disclosed. 1. An alkaline earth metal stannate , where the alkaline earth metal is Mg or Ca , or an alkaline earth metal hydroxystannate where the alkaline earth metal is one of Mg , Ca or Ba; having a surface area using the B.E.T. method of from 20 to 200 m/g.2. The metal stannate or hydroxystannate of in which the surface area is from 50 to 90 m/g.3. The metal stannate or hydroxystannate of in which the alkaline earth metal is Ca.4. A method of producing a high surface area alkaline earth metal hydroxystannate by precipitation claim 1 , the method comprising the steps:providing an agitated aqueous solution of an alkaline earth metal salt in the range 20% to 50% by weight at a specified temperature between 25° C. and 40° C.;introducing with mixing into said solution approximately a molar equivalent of alkali metal stannate at a temperature in the range 35° C. to 45° C.;completing the introduction with agitation for a time period in the region of 1 to 5 hours;subsequently adjusting pH of the composition to between 6.0 and 7.0 using the acid equivalent of the alkaline earth metal salt said acid being in the concentration range of 10% to 30% by weight acid; to precipitate alkaline earth metal hydroxystannate.5. The method of in which the adjusting of pH is in the range 6.5 to 6.7.6. The method of in which the alkali metal stannate is at a temperature of 40° C.+/−3° C.7. The method of in which the specified temperature is 30° C.+/−5° C.8. The method of in which the metal of the alkali metal stannate is calcium stannate.9. (canceled)10. A polymer comprising a component that involves acid at elevated temperature in ...

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Номер записи: 81
18-09-2014 дата публикации

Cu2ZnSnS4 Nanoparticles

Номер: US20140273337A1
Автор: Gresty Nathalie, Harris James, Masala Ombretta, Pickett Nigel
Принадлежит: NANOCO TECHNOLOGIES, LTD.

Materials and methods for preparing CuZnSnS(CZTS) layers for use in thin film photovoltaic (PV) cells are disclosed herein. The CZTS materials are nanoparticles prepared by a colloidal synthesis in the presence of a labile organothiol. The organothiol serves as both a sulphur source and as a capping ligand for the nanoparticles. 1. A process for making CuZnSnSnanoparticles , comprising reacting a copper precursor , a zinc precursor and a tin precursor in the presence of an organothiol ligand.2. A process as recited in claim 1 , wherein the copper precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.3. A process as recited in claim 1 , wherein the copper precursor is copper (I) acetate.4. A process as recited in claim 1 , wherein the zinc precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.5. A process as recited in claim 1 , wherein the zinc precursor is zinc (II) acetate.6. A process as recited in claim 1 , wherein the tin precursor is a tin (IV) chloride solution claim 1 , fuming tin (IV) chloride claim 1 , tine(IV) acetate claim 1 , tin(IV) bis(acetylacetonate) dichloride claim 1 , triphenyl(triphenylmethyl) tin claim 1 , or tin (IV) chloride pentahydrate.7. A process as recited in where the tin precursor is tin (IV) chloride as a solution in dichloromethane.8. A process as recited in claim 1 , wherein the organothiol ligand is an alkanethiol claim 1 , alkenethiol or aromatic thiol.9. A process as recited in claim 1 , wherein the organothiol ligand has a boiling point in the range 190-300° C.10. A process as recited in claim 1 , wherein the organothiol ligand is 1-dodecanethiol.11. A process as recited in claim 1 , wherein the process comprises:a. providing the copper precursor, the zinc precursor, the tin precursor and the organothiol ligand in a first solvent at a first temperature to form a mixture;b. heating the mixture to a second temperature to distil the first solvent; ...

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Номер записи: 82
04-06-2020 дата публикации

Battery with Novel Components

Номер: US20200176766A1
Автор: Johnson Paige L., Neff Jonathan G.
Принадлежит:

A battery cell having an anode or cathode comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. 1. A battery cell having an electrode comprising at least one solid metal oxide material , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200.2. The battery cell of claim 1 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 1 , having a pH<7 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.3. The battery cell of claim 2 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 2 , having a pH<5 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12 claim 2 , at least on its surface.4. The battery cell of claim 2 , wherein the acidic metal oxide comprises tin.5. The battery cell of claim 4 , wherein the acidic metal oxide comprising tin is surface-functionalized with chloride.6. The battery cell of claim 4 , wherein the acidic metal oxide comprising tin is surface functionalized with sulfate.7. The battery cell of claim 2 , wherein the acidic metal oxide comprises iron.8. The battery cell of claim 7 , wherein the acidic metal oxide comprising iron is surface functionalized with chloride.9. The battery cell of claim 7 , wherein the acidic metal oxide comprising iron is surface functionalized with sulfate. This is a divisional application claiming priority to U.S. patent application Ser. No. 15/949,805, filed Apr. 10, 2018, which claims the benefit of U.S. provisional patent application Ser. No. 62/483,789, filed on Apr. 10, 2017, entitled “Blended Acidified Metal Oxide Additive ...

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Номер записи: 83
06-07-2017 дата публикации

TIN DIOXIDE NANOPARTICLES SYNTHESIS APPARATUS AND TIN DIOXIDE NANOPARTICLES PROCESS PRODUCTION

Номер: US20170189878A1
Автор: Fontanez Diego Manuel Ferreira Lusquinos, Moura Francisco Jose
Принадлежит:

A new and efficient nanoparticles synthesis apparatus and process production. More particularly, an apparatus and process applied to the synthesis of nanostructured tin dioxide. The benefits provided by the apparatus and process are applied in various gaseous reactions where occurs the formation of solid and gaseous products. 1. A nanoparticle synthesis reactor comprising:a) a reactor inlet;b) a tubular section in which one of at least two reactants flows axially;c) a gas distributor surrounding the tubular section, the gas distributor comprising a distributor inlet, a circular shape, cylindrical baffles providing flow canals, and orifices surrounding the tubular section of the reactor; andd) a powder collector, {'br': None, 'sub': (g)', '(g)', '(s)', '(g), 'A+B→C+D.'}, 'wherein the gas distributor provides an optimized radial interaction among reactant flows through a curtain of at least one of the reactants, providing kinetic enhancement of the following reaction2. The reactor according to claim 1 , wherein:a first of the reactants flows axially through the tubular section; anda second of the reactants enters the gas distributor through the distributor inlet, wherein the second reactant is redirected by the canals provided by the cylindrical baffles and then flows through the orifices that surround the tubular section, meeting the first reactant flow radially, synthesizing nanoparticles.3. The reactor according to claim 1 , wherein:{'sub': (g)', '4(g), 'Ais SnCl;'}{'sub': (g)', '2', '(g), 'Bis HO;'}{'sub': (s)', '2(s), 'Cis SnO;'}{'sub': (g)', '(g), 'Dis HCl; and'}{'sub': '2(s)', 'SnOis in the form of tin dioxide nanoparticles.'}4. The reactor according to claim 3 , wherein the reactor maintains the reaction temperature at approximately 200° C.5. The reactor according to claim 1 , wherein the reactor provides particle size reduction of the synthesized nanoparticles and optimization of at least one of reaction conversion claim 1 , reaction temperature claim 1 , and ...

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Номер записи: 84
22-07-2021 дата публикации

LOW alpha-RAY EMISSION STANNOUS OXIDE AND METHOD OF PRODUCING THE SAME

Номер: US20210221700A1
Автор: Hirotaka Hirano, Takuma Katase, Yoshihiro Yoshida
Принадлежит: Mitsubishi Materials Corp

What is provided is stannous oxide having an α-ray emission amount of 0.002 cph/cm2 or less after heating in an atmosphere at 100° C. for 6 hours. Tin containing lead as an impurity is dissolved in a sulfuric acid aqueous solution to prepare a tin sulfate aqueous solution, and lead sulfate is precipitated in the aqueous solution and removed. While stirring the tin sulfate aqueous solution from which lead sulfate has been removed, a lead nitrate aqueous solution containing lead having an α-ray emission amount of 10 cph/cm2 or less is added to cause lead sulfate to be precipitated in the tin sulfate aqueous solution, and simultaneously the tin sulfate aqueous solution is circulated while removing the lead sulfate from the aqueous solution. A neutralizing agent is added to the tin sulfate aqueous solution to collect stannous oxide.

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Номер записи: 85
25-09-2014 дата публикации

Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof

Номер: US20140287264A1
Автор: Gal Radovsky, Reshef Tenne, Ronit Popovitz-Biro
Принадлежит: Yeda Research and Development Co Ltd

Provided is a nanostructure including ordered stacked sheets and processes for its preparation and use.

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Номер записи: 86
11-06-2020 дата публикации

Patterning electronic devices using reactive-ion etching of tin oxides

Номер: US20200185609A1
Автор: Jisung Park
Принадлежит: CORNELL UNIVERSITY

Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This approach further patterns a tin oxide-based semiconductor without adversely affecting its electrical properties (e.g., resistivity, electron or hole mobility), as well as maintaining surface roughness. This approach can be used to produce optically transparent devices with high drain current (ID, drain-to-source current per channel width) and high on-off ratio.

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Номер записи: 87
11-06-2020 дата публикации

Battery with Acidified Cathode and Lithium Anode

Номер: US20200185718A1
Автор: Johnson Paige L.
Принадлежит:

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH <7 when suspended in a 5 wt % aqueous solution and a Hammett function H, at least on its surface. 1. A battery cell having an electrode comprising at least one solid metal oxide material , wherein the metal oxide is surface functionalized with a material that is substantially monodispersed and provides acidic electron withdrawing groups having a molecular weight of less than 200 , and having an opposing electrode comprising at least 50% metallic lithium when the battery cell is constructed.2. The battery cell of claim 1 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 1 , having a pH <7 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.3. The battery cell of claim 2 , wherein the material that surface functionalizes the surface of the metal oxide is acidic but not superacidic claim 2 , having a pH <5 when suspended in an aqueous solution at 5 wt % and a Hammett function H>−12.4. The battery cell of claim 2 , wherein the opposing electrode is 95% or greater metallic lithium when the battery cell is constructed.5. The battery cell of claim 2 , wherein a surface of the opposite electrode comprises pure metallic when the battery cell is constructed.6. The battery cell of claim 2 , wherein at least a geometric portion of the opposing electrode consists of metallic lithium when the battery cell is constructed.7. A battery cell having a cathode comprising a solid metal oxide nanomaterial being in a form MOG claim 2 , where Mis a metal claim 2 , Ois total oxygen claim 2 , MOis a metal oxide claim 2 , G is at least one electron-withdrawing surface group claim 2 , and “/” makes a distinction between the metal oxide and the electron-withdrawing surface group claim 2 , the battery electrode solid metal oxide nanomaterial having a pH<5 when ...

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Номер записи: 88
27-06-2019 дата публикации

Flame Based Fluidized Bed Reactor for Nanomaterials Production

Номер: US20190193044A1
Автор: Guhy Lukus, Nguyen Tu Quang, Paxton William, Sunkara Mahendra
Принадлежит: Advanced Energy Materials, LLC

The present development is a reactor system for the production of nanostructures. The reactor system comprises a conical reactor body designed to maintain an upwardly directed vertical plasma flame and hydrocarbon flame. The reactor system further includes a metal powder feed that feeds into the plasma flame, a cyclone and a dust removal unit. The system is designed to produce up to 100 grams of metal oxide nanomaterials per minute. 1. In a reactor system for producing nanostructures wherein the reactor system comprises a reaction chamber having a flame source , and a powder feeder to disperse a material for producing nanostructures into the flame , and a means to receive and separate the produced nanostructures and unreacted dispersed material and to isolate the produced nanostructures , the improvement comprising: providing a reaction chamber that defines a bottom and a top and that has a flame source located at the bottom and wherein the top is adapted to allow materials from the reaction chamber to be transferred to the separation means , and wherein the reaction chamber is oriented such that a flame source produced by the flame source projects upwardly into the reaction chamber.2. The reactor system of wherein the flame source is a plasma applicator or a plasma torch or a hydrocarbon burner or a combination thereof.3. In a reactor system for producing nanostructures wherein the reactor system comprises a reaction chamber having a flame source claim 1 , and a powder feeder to disperse a material for producing nanostructures into the flame claim 1 , and a mechanical separator to receive and separate the produced nanostructures and unreacted dispersed material and to isolate unreacted dispersed material in a container that is in communication with the separator claim 1 , the improvement comprising: providing a reaction chamber has a cone-shaped configuration with a narrow end of the cone formed adjacent to the flame source and a wide end of the cone closed with a ...

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Номер записи: 89
13-07-2017 дата публикации

Germanane analogs and optoelectronic devices using the same

Номер: US20170200906A1
Автор: Elisabeth Bianco, Joshua Goldberger, Shishi Jiang
Принадлежит: Ohio State Innovation Foundation

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

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Номер записи: 90
21-07-2016 дата публикации

Processes for recovering tantalum and niobium with carbon tetrachloride

Номер: US20160208363A1
Автор: Dmitri Terekhov, Jin Yong Zhiu, Kamran Khozan, Nanthakumar Victor Emmanuel
Принадлежит: CVMR Corp

There is provided a method of treating solid material, wherein the solid material includes target metallic material and one or more other metallic elements, wherein the target metallic material consists of at least one of tantalum and niobium, the method comprising contacting the solid material with a gaseous reagent material within a reaction zone, wherein the gaseous reagent material includes carbon tetrachloride.

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Номер записи: 91
18-06-2020 дата публикации

METHOD FOR PRODUCING LGPS-BASED SOLID ELECTROLYTE

Номер: US20200194825A1
Автор: ITO TOMOHIRO, KATORI Aki, KAWAKAMI Kotaro, Shimada Masahiro
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

A method for producing an LGPS-type solid electrolyte can be provided, the method includes preparing a homogeneous solution by mixing and reacting LiS and PSin an organic solution such that the molar ratio of LiS/PSis 1.0-1.85; a precipitation step for forming a precipitate by adding, to the homogeneous solution, at least one MS(M is selected from the group consisting of Ge, Si, and Sn) and LiS and then mixing; obtaining a precursor by removing the organic solution from the precipitate; and obtaining the LGPS-type solid electrolyte by heating the precursor at 200-700° C. 1. A method for producing an LGPS-type solid electrolyte , which comprises:{'sub': 2', '2', '5', '2', '2', '5, 'preparing a homogeneous solution by mixing and reacting LiS and PSin an organic solvent such that the molar ratio of LiS/PSis 1.0 to 1.85;'}{'sub': 2', '2, 'forming a precipitate by adding, to the homogeneous solution, at least one MS(M is selected from the group consisting of Ge, Si and Sn) and LiS and then mixing;'}obtaining a precursor by removing the organic solvent from the precipitate; andobtaining the LGPS-type solid electrolyte by heating the precursor at 200 to 700° C.2. The method according to claim 1 , wherein the organic solvent is at least one selected from the group consisting of tetrahydrofuran claim 1 , acetonitrile claim 1 , ethyl acetate and methyl acetate.3. The method according to -er- claim 1 , wherein the temperature in the drying stepremoving of the organic solvent from the precipitate for obtaining the precursor is 60 to 280° C.4. The method according to claim 1 , wherein the LGPS-type solid electrolyte has peaks at at least 2θ0=20.18°±0.50° claim 1 , 20.44°±0.50° claim 1 , 26.96°±0.50° and 29.58°±0.50° in X-ray diffraction (CuKα: λ=1.5405 Å).5. The method according to claim 4 , wherein when the diffraction intensity of the peak at 2θ=29.58°±0.50° is referred to as Iand the diffraction intensity of the peak at 2θ=27.33°±0.50° is referred to as I claim 4 , I/Iis less ...

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Номер записи: 92
19-07-2018 дата публикации

Tin-containing compounds

Номер: US20180205078A1
Автор: Emma Kendrick, Robert Gruar
Принадлежит: Faradion Ltd, Sharp Corp

A composition comprises the general formula X u Ni v Z b Mn x Ti y Sn w , O 2 , wherein: X consists of sodium or a mixture of group 1 metals having sodium as the major constituent; Z is one or more alkali metals selected from the group consisting of lithium and sodium; the X constituent and the Z constituent are present at crystallographically distinct sites when the compound is in a solid phase; 0<u 0<b<0.27; 0.1<v<½; 0<w≤ 4/12; 3/12≤x; and w+x+y=1−(b+v). It has been found that such materials may be charged to a capacity that is greater than the theoretical charging capacity of the material, as determined from the content of redox active elements in the material.

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Номер записи: 93
25-06-2020 дата публикации

Czts precursor inks and methods for preparing czts thin films and czts-based-devices

Номер: US20200198983A1
Автор: Cameron Ritchie, Jacek Jasieniak, Paul Mulvaney
Принадлежит: MONASH UNIVERSITY, University of Melbourne

The present disclosure relates to compositions comprising quaternary metal chalcogenide nanoparticles stabilized by an inorganic metal-chalcogenide stabilizing agent, wherein the nanoparticles are dispersible in a polar solvent. More particularly, the disclosure relates to compositions of CZTS nanoparticles. This disclosure provides processes for manufacturing these compositions. The disclosure also provides coated substrates, thin films and devices comprising the compositions, and processes for manufacturing the same.

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Номер записи: 94
13-08-2015 дата публикации

METAL CHALCOGENIDE SYNTHESIS METHOD AND APPLICATIONS

Номер: US20150225254A1
Автор: Robinson Richard D., ZHANG Haitao
Принадлежит: CORNELL UNIVERSITY

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent). 1. A synthetic method comprising reacting in an organic solvent material a metal material and an ammonium chalcogenide material to form a metal chalcogenide nanocrystal material.2. The method of wherein the organic solvent material comprises an anhydrous organic solvent material.3. The method of wherein the reacting produces greater than 30 grams of metal chalcogenide nanocrystal material in a single reaction batch.4. The method of wherein the metal chalcogenide nanocrystal material has a monodispersity less than 10 percent.5. The method of wherein the metal material is selected from the group consisting of a metal oxide claim 1 , a metal coordination complex and a metal salt.6. The method of wherein the metal material comprises a metal cation selected from the group consisting of Ti claim 5 , Mn claim 5 , Fe claim 5 , Co claim 5 , Ni claim 5 , Cu claim 5 , Zn claim 5 , Ga claim 5 , Mo claim 5 , Ag claim 5 , Cd claim 5 , In claim 5 , Sn claim 5 , Sb claim 5 , W claim 5 , Hg claim 5 , Pb claim 5 , and Bi metal cations.7. The method of wherein the metal salt comprises an anion selected from the group consisting of carboxylate claim 5 , diketonate claim 5 , halide claim 5 , perchlorate and amide anions.8. The method of wherein the ammonium chalcogenide is selected from the group consisting of ammonium sulfide claim 1 , ammonium selenide and ammonium telluride.9. The method of wherein the reacting is undertaken at a temperature ...

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Номер записи: 95
03-08-2017 дата публикации

INORGANIC HALIDE PEROVSKITE NANOWIRES AND METHODS OF FABRICATION THEREOF

Номер: US20170217785A1
Автор: Dou Letian, Lai Minliang, Wong Andrew B., Yang Peidong, Zhang Dandan
Принадлежит: The Regents of the University of California

This disclosure provides systems, methods, and apparatus related to inorganic halide perovskite nanowires. In one aspect, a first solution comprising cesium oleate or rubidium oleate in a first organic solvent is provided. A second solution comprising a lead halide and a surfactant in a second organic solvent is provided. The halide is selected from a group consisting of chlorine, bromine, and iodine. The first solution and the second solution are mixed. A reaction between the cesium oleate or the rubidium oleate and the lead halide forms a plurality of nanowires comprising an inorganic lead halide perovskite. 1. A nanowire comprising:{'sub': '3', 'an inorganic halide perovskite comprising ABX, A being Cs or Rb, B being Sn or Pb, and X being selected from a group consisting of Cl, Br, I, a combination of Br and Cl, and a combination of Br and I.'}2. The nanowire of claim 1 , wherein the nanowire has a cross-sectional dimension of less than 1000 nanometers.3. The nanowire of claim 1 , wherein the nanowire comprises a single crystal.4. The nanowire of claim 1 , wherein the nanowire has an orthorhombic crystal structure.5. The nanowire of claim 1 , wherein the nanowire has a length of about 100 nanometers to 30 microns.6. A method comprising:(a) providing a first solution comprising cesium oleate or rubidium oleate in a first organic solvent;(b) providing a second solution comprising a lead halide and a surfactant in a second organic solvent, the halide being selected from a group consisting of chlorine, bromine, and iodine; and(c) mixing the first solution and the second solution, a reaction between the cesium oleate or the rubidium oleate and the lead halide forming a plurality of nanowires comprising an inorganic lead halide perovskite.7. The method of claim 6 , wherein the first organic solvent comprises octadecene (ODE) claim 6 , and wherein the second organic solvent comprises a solvent selected from a group consisting of ODE and oleylamine.8. The method of claim ...

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Номер записи: 96
03-08-2017 дата публикации

ARTICLES WITH PATTERNED COATINGS

Номер: US20170217831A1
Автор: Hart Shandon Dee, Hu Guangli, Smith Nicholas James
Принадлежит:

Embodiments of an article including a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided. 123-. (canceled)24. An article comprising:a substrate including a surface;a patterned coating disposed on the surface forming a coated surface,wherein, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater.25. The article of claim 24 , wherein claim 24 , when a strain is applied to the article claim 24 , the patterned coating has a first region and a second region claim 24 , and wherein the first region comprises a first tensile stress and the second region comprises a second tensile stress greater than the first tensile stress.26. The article of claim 24 , wherein claim 24 , when a strain is applied to the article claim 24 , the substrate comprises a maximum substrate tensile stress and the patterned coating has at least one local region comprising a local tensile stress that is less than the maximum substrate tensile stress.27. The article of claim 24 , wherein claim 24 , when a strain is applied to the article claim 24 , the substrate comprises a maximum substrate tensile strain and the patterned coating has at least one local region comprising a local tensile strain that is less than the maximum substrate tensile strain.28. The article of claim 24 , wherein the patterned coating comprises a bimodal distribution of coating thickness claim 24 , the bimodal distribution comprising a lower-mode thickness in the range from about 0 to about 100 nm claim 24 , and a higher-mode thickness in the range from about 50 to about 5000 nm.29. The article of claim 24 , ...

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Номер записи: 97
02-08-2018 дата публикации

POROUS OXIDE SEMICONDUCTOR INCLUDING THREE-DIMENSIONALLY INTERCONNECTED NANOPORES, MESOPORES, AND MACROPORES, METHOD FOR PREPARING THE POROUS OXIDE SEMICONDUCTOR AND GAS SENSOR INCLUDING THE POROUS OXIDE SEMICONDUCTOR AS GAS SENSING MATERIAL

Номер: US20180215628A1
Автор: Choi Seung Ho, Kang Yun Chan, Lee Jong Heun, Yoon Jee-uk
Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm. The oxide semiconductor gas sensor of the present invention exhibits ultrahigh response and ultrafast response to various analyte gases due to the presence of the controlled nanopores, mesopores, and macropores. 1. A porous oxide semiconductor comprising three-dimensionally interconnected nanopores , mesopores , and macropores wherein the nanopores have a diameter of 1 nm to less than 4 nm , the mesopores have a diameter of 4 nm to 50 nm , and the macropores have a diameter of 100 nm to less than 1 μm.2. The porous oxide semiconductor according to claim 1 , wherein the oxide semiconductor is selected from the group consisting of SnO2 claim 1 , WO3 claim 1 , In2O3 claim 1 , ZnO claim 1 , TiO2 claim 1 , Fe2O3 claim 1 , MoO3 claim 1 , CuO claim 1 , NiO claim 1 , Co3O4 claim 1 , and Cr2O3.3. A method for preparing a porous oxide semiconductor comprising: preparing a metal salt solution; dispersing spherical template particles and elongated carbon precursors in the metal salt solution claim 1 , followed by ultrasonic spray to prepare microdroplets; and thermally decomposing the droplets.4. The method according to claim 3 , wherein the metal salt solution is a solution of at least one salt of a metal selected from the group consisting of Sn claim 3 , W claim 3 , In claim 3 , Zn claim 3 , Ti claim 3 , Fe claim 3 , Mo claim 3 , Cu claim 3 , Ni claim 3 , Co claim 3 , and Cr.5. The method according to claim 3 , wherein the spherical template particles have a diameter of 100 nm to less than 1 μm.6. The method according to claim 3 , ...

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Номер записи: 98
02-07-2020 дата публикации

METHOD FOR PRODUCING STANNOUS SULFIDE

Номер: US20200207636A1
Автор: Chen Hao, Chen Wei, DAI Weiping, Han Long, Shao Dan, Su Bin, Xie Hui, YANG Bin, Yang Kun, YANG Shouyun, ZHENG Chunyang
Принадлежит:

A method for producing stannous sulfide, the method including: 1) heating a tin-containing material to 200-600° C., and mixing sulfur with the tin-containing material heated, to yield a product; and 2) distilling the product in a vacuum furnace at a pressure of 1-500 pascal. 1. A method , comprising:1) heating a tin-containing material to 200-600° C., and mixing sulfur with the tin-containing material heated, to yield a product; and2) distilling the product in a vacuum furnace at a pressure of 1-500 pascal.2. The method of claim 1 , wherein the tin-containing material is refined tin or crude tin comprising tin and impurities selected from copper claim 1 , iron claim 1 , nickel claim 1 , or a mixture thereof.3. The method of claim 1 , wherein in 1) claim 1 , a mass ratio of the sulfur to the tin-containing material is 1.1-1.5.4. The method of claim 1 , wherein in 1) claim 1 , the sulfur is mixed with the tin-containing material for 5-30 min.5. The method of claim 1 , wherein the vacuum furnace has a temperature of 900-1350° C. This application is a continuation-in-part of International Patent Application No. PCT/CN2018/074485 with an international filing date of Jan. 29, 2018, designating the United States, now pending, and further claims priority benefits to Chinese Patent Application No. 201710802843.7 filed Sep. 7, 2017. The contents of all of the aforementioned applications, including any intervening amendments thereto, are incorporated herein by reference. Inquiries from the public to applicants or assignees concerning this document or the related applications should be directed to: Matthias Scholl P.C., Attn.: Dr. Matthias Scholl Esq., 245 First Street, 18th Floor, Cambridge, Mass. 02142.The disclosure relates to a method for producing stannous sulfide, also known as tin (II) sulfide. The chemical formula of stannous sulfide is SnS. Its natural occurrence concerns herzenbergite (α-SnS), a rare mineral.The disclosure provides a method for producing stannous ...

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Номер записи: 99
09-08-2018 дата публикации

FUNCTIONALIZED METAL OXIDE NANOPARTICLES, METHODS OF PREPARATION AND USES THEREOF

Номер: US20180222768A1
Автор: Betancur Lopera Rafael Andres, Ciro Villegas John Aider, Jaramillo Isaza Franklin
Принадлежит:

Functionalized metal oxides nanoparticles comprising at least one alkali metal ion and nitrate ions are disclosed herein. In addition, methods for obtaining functionalized nanoparticles are disclosed. Likewise, uses of the disclosed nanoparticles in the obtaining of colloidal inks and optoelectronic films for electronic devices, for example solar cells, are disclosed. The nanoparticles taught herein are useful in the manufacture of; inter alia, electronic, optoelectronic and photovoltaic devices. 1. Functionalized nanoparticles of Formula{'br': None, 'sup': +', '−, 'sub': 3', 'y', 'x, '(Z/NO)-MO'}wherein:{'sup': '+', 'sub': y', 'x, 'Z corresponds to an alkali metal ion and MOcorresponds to metal oxide nanoparticle, where M is a metal, y and x are the particular subscripts of the oxide.'}2. The functionalized nanoparticles according to claim 1 , wherein the alkaline metal ion Zis selected from a group consisting of Li claim 1 , Na claim 1 , K claim 1 , Rb claim 1 , Cs or Fr.3. The functionalized nanoparticles according to claim 1 , wherein M is transition metal.4. The functionalized nanoparticles according to claim 1 , wherein MOis selected from a group consisting of NiO claim 1 , ZnO claim 1 , TiO claim 1 , SnO claim 1 , CoO claim 1 , CuO.5. The functionalized nanoparticles according to claim 1 , wherein it comprises nitrates between 0.1% and 10% by weight.6. The functionalized nanoparticles according to claim 1 , wherein it comprises Z between 0.1% and 10% atomic.7. Functionalized nanoparticles according to claim 1 , wherein the average diameter of the mentioned functionalized nanoparticles is below 10 nm.8. A method for preparing the stable functionalized nanoparticles according to claim 1 , comprising:providing a soluble nitrate solution of a transition metal;{'sup': '+', 'precipitating the hydroxide of the transition metal by means of the addition of one base containing an alkaline metal ion Z,'}separating the hydroxide and drying it at a first temperature; and ...

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Номер записи: 100