Group 13 selenide nanoparticles

A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an M x Se y Semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells

Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200° C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ˜40° C. lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

Cu2XSnY4 Nanoparticles

Materials and methods for preparing Cu 2 XSnY 4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

Group 13 Selenide Nanoparticles

A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MSeSemiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films. 1. A method of forming a semiconductor film , the method comprising:co-depositing CuSe nanoparticles and Group 13 selenide nanoparticles on a substrate; and,heating the substrate to a temperature sufficient to melt the CuSe nanoparticles and the Group 13 selenide nanoparticles;wherein the Group 13 selenide nanoparticles comprise a Group 13 selenide semiconductor and an organic capping ligand bound to the nanoparticle by a carbon-selenium covalent bond and,wherein the temperature is sufficient to remove the organic capping ligand.2. The method of wherein the organic capping ligand is an alkyl claim 1 , alkenyl claim 1 , alkynyl claim 1 , or aryl group.3. The method of wherein the semiconductor film is substantially free of sulfur.4. The method of wherein the Group 13 selenide nanoparticles are prepared by a method comprising:reacting a Group 13 ion precursor with a selenol compound.5. The method of wherein the Group 13 ion precursor is a chloride claim 4 , acetate claim 4 , or acetylacetonate of a Group 13 element.6. The method of wherein the Group 13 ion precursor is selected from the group consisting of InCl claim 4 , In(OAc) claim 4 , In(acac) claim 4 , GaCl claim 4 , Ga(OAc)and Ga(acac).7. The method of wherein the selenol compound is an alkyl claim 4 , alkenyl claim 4 , alkynyl claim 4 , or aryl selenol.8. The method of wherein the selenol compound contains 4 to 14 carbon atoms.9. The method of wherein the selenol compound is octane selenol.10. The method of ...

Group XIII Selenide Nanoparticles

A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MSesemiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films. 1. A method of producing Group XIII selenide nanoparticles , the method comprising:reacting a Group XIII ion precursor with a selenol compound.2. The method of claim 2 , wherein the Group XIII ion precursor is a chloride claim 2 , acetate claim 2 , or acetylacetonate of a Group XIII element.3. The method of claim 1 , wherein the Group XIII ion precursor is selected from the group consisting of InCl claim 1 , In(OAc) claim 1 , In(acac) claim 1 , GaCl claim 1 , Ga(OAc)and Ga(acac).4. The method of claim 1 , wherein the selenol is an alkyl claim 1 , alkenyl claim 1 , alkynyl claim 1 , or aryl selenol.5. The method of claim 1 , wherein the selenol contains 4 to 14 carbon atoms.6. The method of claim 1 , wherein the selenol compound is octane selenol.7. The method of claim 1 , further comprising adding a second selenium compound to the Group XIII ion precursor.8. The method of claim 7 , wherein the second selenium source is a trioctylphosphine selenide.9. The method of claim 1 , wherein the nanoparticles have diameters below about 200 nm.10. The method of claim 1 , wherein the nanoparticles have diameters of about 2 to about 100 nm.11. The method of claim 1 , wherein the nanoparticles have diameters less than about 10 nm.12. Group XIII selenide nanoparticles prepared by a method comprising: reacting a Group XIII ion precursor with a selenol compound.13. A composition comprising: a nanoparticle comprising a core and an organic capping ligand claim 1 , wherein the core ...

Illuminated Signage Using Quantum Dots

An illuminated sign has a primary light source in spaced apart relation to a transparent or translucent substrate having quantum dot phosphors printed or coated thereon. The primary light source may be a blue LED, a white LED or an LED having a significant portion of its emission in the ultraviolet region of the spectrum. The LED may be a backlight for the transparent or translucent substrate and/or an edge light, a down light or an up light. 1. An illuminated sign comprising:an enclosure having at least one transparent or translucent surface;a light source within the enclosure configured to illuminate the transparent or translucent surface;a plurality of quantum dots adhered to the transparent or translucent surface in a preselected pattern.2. An illuminated sign as recited in wherein the preselected pattern comprises alphanumeric characters.3. An illuminated sign as recited in wherein the preselected pattern comprises a graphics pattern.4. An illuminated sign as recited in wherein the light source comprises light-emitting diodes that emit predominately in the blue portion of the visible spectrum or in the ultraviolet portion of the electromagnetic spectrum.5. An illuminated sign as recited in wherein the quantum dots comprise a core of II-VI claim 1 , II-V claim 1 , III-V claim 1 , III-VI claim 1 , IV or IV-VI semiconductor material.6. An illuminated sign as recited in wherein the quantum dots comprise a core of heavy metal-free semiconductor material.7. An illuminated sign as recited in wherein the heavy metal-free quantum dots comprise a core comprising indium and phosphorus and optionally comprising one or more elements selected from the group consisting of zinc claim 6 , sulphur claim 6 , and selenium.8. An illuminated sign as recited in wherein the heavy metal-free quantum dot cores are shelled with one or more layers comprised of heavy metal-free II-VI and/or III-V semiconductor material and/or their ternary and quaternary alloys.9. An illuminated sign as ...

Formation of 2D Flakes From Chemical Cutting of Prefabricated Nanoparticles and van der Waals Heterostructure Devices Made Using The Same

A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film. 1. A method of fabricating a two-dimensional nanoflake comprising:fabricating a nanoparticle; andrefluxing the nanoparticle in a solvent to form the two-dimensional nanoflake.2. The method of claim 1 , wherein the solvent is a coordinating solvent.3. The method of claim 1 , wherein the solvent is selected from the group consisting of: amines; fatty acids; phosphines; phosphine oxides; andalcohols.4. The method of claim 1 , wherein the solvent is hexadecylamine or myristic acid.5. The method of claim 1 , wherein the nanoparticle is a quantum dot.6. The method of claim 1 , wherein the nanoparticle is a nanorod.7. A method of fabricating a two-dimensional nanoflake comprising:fabricating a nanoparticle;stirring the nanoparticle in a first solvent in the presence of a first intercalating agent and a second intercalating agent for a first time period; andadding a second solvent and stirring for a second time period.8. The method of claim 7 , wherein the first and second intercalating agents are selected from the group consisting of: Lewis bases; aminothiols; and amino acids.9. The method of claim 7 , wherein the first and second solvents are selected from the group consisting of: dimethyl sulfoxide; acetonitrile; and propanol.10. The method of claim 7 , further comprising:adding a third intercalating agent and a third solvent; andstirring for a third time period.11. The method of claim 7 , wherein the nanoparticle is a quantum dot.12. The method of claim 7 , ...

Cu2XSnY4 Nanoparticles

Materials and methods for preparing Cu 2 XSnY 4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

Preparation of Copper Selenide Nanoparticles

A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent are also disclosed.

Encapsulated Nanoparticles

The present invention relates to a method for producing encapsulated nanoparticles by dispersing said nanoparticles and an encapsulating medium in a common solvent to form a first solution system and treating said first solution system with a stimulus suitable to induce simultaneous aggregation of the nanoparticles and the encapsulating medium.

Synthesis of Metal Oxide Semiconductor Nanoparticles from a Molecular Cluster Compound

A method of preparing metal oxide nanoparticles is described herein. The method involves reacting nanoparticle precursors in the presence of a population of molecular cluster compounds. The molecular cluster compound may or may not contain the same metal as will be present in the metal oxide nanoparticle. Likewise, the molecular cluster compound may or may not contain oxygen. The molecular cluster compounds acts a seeds or templates upon which nanoparticle growth is initiated. As the molecular cluster compounds are all identical, the identical nucleation sites result in highly monodisperse populations of metal oxide nanoparticles. 1. A method of forming metal oxide nanoparticles , the method comprising: reacting nanoparticle precursors comprising a metal and oxygen in the presence of a population of molecular cluster compounds.2. The method as recited in claim 1 , wherein the molecular cluster compounds and the metal oxide nanoparticles share a crystallographic phase.3. The method as recited in claim 1 , wherein the molecular cluster compounds are fabricated in situ.4. The method as recited in claim 1 , wherein the molecular cluster compounds are II-VI molecular cluster compounds.5. The method as recited in claim 1 , wherein both the molecular cluster compounds and the metal oxide nanoparticle precursors comprise identical Group JIB metals and oxygen.6. The method as recited in claim 1 , wherein the molecular cluster compounds do not comprise oxygen.7. The method as recited in claim 1 , wherein the molecular cluster compounds do not comprise a Group IIB metal identical to a metal of the nanoparticle precursors.8. The method as recited in claim 1 , wherein the cluster compounds are oximato clusters.9. The method as recited in claim 1 , wherein the metal oxide nanoparticles comprise a Group IIB metal.10. The method as recited in claim 1 , wherein the metal oxide nanoparticles comprise ZnO claim 1 , CdO or HgO.11. The method as recited in claim 1 , wherein the metal ...

Solution-Phase Synthesis of Layered Transition Metal Dichalcogenide Nanoparticles

A method of synthesizing two-dimensional (2D) nanoparticles of transition metal dichalcogenide (TMDC) material utilises a molecular cluster compound. The method allows a high degree of control over the shape, size and composition of the 2D TMDC nanoparticles, and may be used to produce material with uniform properties in large quantities. 1. A two-dimensional nanoflake comprising:a molecular cluster compound; anda core semiconductor material disposed on the molecular cluster compound.2. The two-dimensional nanoflake of claim 1 , wherein the core semiconductor material comprises an element of the transition metals and an element of Group 16 of the periodic table.3. The two-dimensional nanoflake of claim 2 , wherein the element of the transition metals is selected from the group consisting of Mo and W.4. The two-dimensional nanoflake of claim 2 , wherein the element of Group 16 comprises O claim 2 , S claim 2 , Se or Te.5. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake is a two-dimensional quantum dot.6. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake is a single-layered quantum dot.7. The two-dimensional nanoflake of further comprising a shell of a second semiconductor material disposed on the core semiconductor material.8. The two-dimensional nanoflake of claim 1 , wherein the core semiconductor material comprises one or more elements not in the molecular cluster compound.9. The two-dimensional nanoflake of claim 1 , wherein the molecular cluster compound is [RNR′][ME(SPh)] where M=Cd or Zn; E and E′ are independently selected from S and Se; and R and R′ are independently selected from the group consisting of H claim 1 , Me and Et.10. The two-dimensional nanoflake of claim 1 , wherein the two-dimensional nanoflake further comprises an outermost layer comprising a ligand.11. The two-dimensional nanoflake of claim 10 , wherein the ligand comprises an alkyl chalcogenide.12. The two-dimensional nanoflake ...

SHELLING OF HALIDE PEROVSKITE NANOPARTICLES FOR THE PREVENTION OF ANION EXCHANGE

A core/shell semiconductor nanoparticle structure comprises a core comprising a halide perovskite semiconductor and a shell comprising a semiconductor material that is not a halide perovskite (and that is substantially free of halide perovskites). The halide perovskite semiconductor core may be of the form AMX, wherein: A is an organic ammonium such as CHNH, (CH)(CHNH), PhCHNH, CHCHNH or 1-adamantyl methyl ammonium, an amidinium such as CH(NH), or an alkali metal cation such as Li, Na, K, Rbor Cs; M is a divalent metal cation such as Mg, Mn, Ni, Co, Pb, Sn, Zn, Ge, Eu, Cuor Cd; and X is a halide anion (F, Cl, Br, I) or a combination of halide anions. 1. A core/shell semiconductor nanoparticle comprising:a core comprising a halide perovskite semiconductor; anda shell substantially surrounding the core and comprising a semiconductor material that is not a halide perovskite,wherein the shell is substantially free of halide perovskites.2. The core/shell semiconductor nanoparticle of claim 1 , wherein the shell comprises BaTiO claim 1 , SrTiO claim 1 , BiFeO claim 1 , LaNiO claim 1 , CaTiO claim 1 , PbTiOor LaYbO.3. The core/shell semiconductor nanoparticle of claim 1 , wherein the shell comprises a group IIB-VIB semiconductor material or a group IV-VI semiconductor material.4. The core/shell semiconductor nanoparticle of claim 1 , wherein the shell comprises ZnS or PbS.5. The core/shell semiconductor nanoparticle of claim 1 , wherein the core comprises a halide perovskite semiconductor of the form AMX claim 1 , wherein A is an organic ammonium claim 1 , an anidinium or alkali metal cation claim 1 , M is a divalent metal cation claim 1 , and X is a halide anion.6. The core/shell semiconductor nanoparticle of claim 5 , wherein A is CHNH claim 5 , (CH)(CHNH) claim 5 , PhCHNH claim 5 , CHCHNH claim 5 , 1-adamantyl methyl ammonium claim 5 , CH(NH) claim 5 , Li claim 5 , Na claim 5 , K claim 5 , Rbor Cs.7. The core/shell nanoparticle of claim 5 , wherein M is Mg claim 5 , Mn ...

Preparation of Copper-Rich Copper Indium (Gallium) Diselenide/Disulphide Nanoparticles

A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices. 1. A method for preparing CIGS nanoparticles comprising:heating a copper salt together with at least one salt selected from the group consisting of indium salts and gallium salts in a solvent at a first temperature to produce a reaction solution;adding an organo-chalcogen precursor to the reaction solution;heating the reaction solution to a second temperature while stirring for a first time interval;cooling the reaction solution to room temperature; and, isolating nanoparticles from the reaction solution.2. The method recited in wherein the molar ratio of Cu salts to the combined total of In and Ga salts is between about 1:0.65 and about 1:0.85.3. The method recited in further comprising:cooling the reaction solution to a third temperature and stirring for a second time interval after heating the reaction solution to a second temperature.4. The method recited in wherein the group consisting of copper salts claim 1 , indium salts and gallium salts comprises salts selected from the group consisting of acetates claim 1 , acetylacetonates claim 1 , chlorides claim 1 , bromides claim 1 , and iodides.5. The method recited in wherein the solvent is a non-coordinating solvent.6. The method recited in wherein the non-coordinating solvent is selected from the group consisting of 1-octadecene claim 5 , benzylether claim 5 , diphenylether ...

Copper-Indium-Gallium-Chalcogenide Nanoparticle Precursors for Thin-Film Solar Cells

Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200° C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ˜40° C. lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

Cu2XSnY4 Nanoparticles

Materials and methods for preparing CuXSnYnanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles. 1. A process for making CuXSnYnanoparticles , wherein X is Zn , Cd , Hg , Ni , Co , Mn or Fe and Y is S or Se , the process comprising:reacting a copper precursor, an X precursor and a tin precursor in the presence of a labile organo-chalcogen to form a nanoparticle and to form a surface coating on the nanoparticle, the surface coating consisting essentially of the labile organo-chalcogen.2. A process as recited in claim 1 , wherein the copper precursor is an acetate claim 1 , an acetylacetonate or a chloride.3. A process as recited in claim 1 , wherein the X precursor is an acetate claim 1 , an acetylacetonate claim 1 , a chloride or a stearate.4. A process as recited in claim 1 , wherein the X precursor is zinc(II) acetate.5. A process as recited in claim 1 , wherein the X precursor is cadmium(II) acetate.6. A process as recited in claim 1 , wherein the X precursor is iron(II) acetylacetonate.7. A process as recited in claim 1 , wherein the X precursor is iron(III) acetylacetonate.8. A process as recited in claim 1 , wherein the tin precursor is a chloride.9. A process as recited in claim 1 , wherein the solvent is dichloromethane.10. A process as recited in claim 1 , wherein the tin precursor is tin(IV) acetate claim 1 , tin(IV) bis(acetylacetonate) dichloride claim 1 , or triphenyl(trimethyl) tin.11. A process as recited in claim 1 , wherein the solvent is a non-coordinating solvent.12. A process as recited in claim 1 , wherein the solvent is 1-octadecene or Therminol®66.13. A process as recited in claim 1 ...

Cu2ZnSnS4 Nanoparticles

Materials and methods for preparing CuZnSnS(CZTS) layers for use in thin film photovoltaic (PV) cells are disclosed herein. The CZTS materials are nanoparticles prepared by a colloidal synthesis in the presence of a labile organothiol. The organothiol serves as both a sulphur source and as a capping ligand for the nanoparticles. 1. A process for making CuZnSnSnanoparticles , comprising reacting a copper precursor , a zinc precursor and a tin precursor in the presence of an organothiol ligand.2. A process as recited in claim 1 , wherein the copper precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.3. A process as recited in claim 1 , wherein the copper precursor is copper (I) acetate.4. A process as recited in claim 1 , wherein the zinc precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.5. A process as recited in claim 1 , wherein the zinc precursor is zinc (II) acetate.6. A process as recited in claim 1 , wherein the tin precursor is a tin (IV) chloride solution claim 1 , fuming tin (IV) chloride claim 1 , tine(IV) acetate claim 1 , tin(IV) bis(acetylacetonate) dichloride claim 1 , triphenyl(triphenylmethyl) tin claim 1 , or tin (IV) chloride pentahydrate.7. A process as recited in where the tin precursor is tin (IV) chloride as a solution in dichloromethane.8. A process as recited in claim 1 , wherein the organothiol ligand is an alkanethiol claim 1 , alkenethiol or aromatic thiol.9. A process as recited in claim 1 , wherein the organothiol ligand has a boiling point in the range 190-300° C.10. A process as recited in claim 1 , wherein the organothiol ligand is 1-dodecanethiol.11. A process as recited in claim 1 , wherein the process comprises:a. providing the copper precursor, the zinc precursor, the tin precursor and the organothiol ligand in a first solvent at a first temperature to form a mixture;b. heating the mixture to a second temperature to distil the first solvent; ...

Quantum Dot Light-Emitting Diodes for Phototherapy

Disclosed herein are articles for use in phototherapy utilizing quantum dots (QDs). One embodiment is a medical dressing having an occlusive layer and translucent layer. Quantum dot light-emitting diode chips are configured within the occlusive layer to provide light of a specific wavelength for use in phototherapy. Another embodiment is a medical dressing having an occlusive layer and translucent layer, wherein quantum dot material is embedded or impregnated within one or both layers. 1. A medical dressing for phototherapy , the dressing comprising:quantum dot light-emitting diode chips configured in an occlusive layer and covered with a translucent layer.2. An apparatus as recited in claim 1 , wherein the quantum dot light-emitting diode chips comprise red- or infrared-emitting quantum dots.3. An apparatus as recited in claim 1 , wherein the quantum dot light-emitting diode chips comprise quantum dots comprising CdSe claim 1 , InP claim 1 , CdTe claim 1 , PbSe claim 1 , InAs or Cu(In claim 1 ,Ga)(S claim 1 ,Se) claim 1 , or their doped or alloyed derivatives.4. A medical dressing for phototherapy claim 1 , the dressing comprising:an occlusive layer and a translucent layer, andquantum dots impregnated into one or both of the occlusive layer or the translucent layer.5. An apparatus as recited in claim 4 , wherein the quantum dots comprise red- or infrared-emitting quantum dots.6. An apparatus as recited in claim 4 , wherein the quantum dots comprise CdSe claim 4 , InP claim 4 , CdTe claim 4 , PbSe claim 4 , InAs or Cu(In claim 4 ,Ga)(S claim 4 ,Se) claim 4 , or their doped or alloyed derivatives. Phototherapy, also known as heliotherapy, is the use of light to treat medical disorders. Modern-day phototherapy was pioneered by Niels Finsen, who was awarded the 1903 Nobel Prize for Physiology and Medicine for his work on the treatment of disease with concentrated light radiation. Finsen's initial work involved the separation of ultraviolet (UV) rays using quartz ...

Metal-doped Cu(In,Ga) (S,Se)2 nanoparticles

Various methods are used to provide a desired doping metal concentration in a CIGS-containing ink when the CIGS layer is deposited on a photovoltaic device. When the doping metal is sodium, it may be incorporated by: adding a sodium salt, for example sodium acetate, together with the copper-, indium- and/or gallium-containing reagents at the beginning of the synthesis reaction of Cu(In,Ga)(S,Se)nanoparticles; synthesizing Cu(In,Ga)(S,Se)nanoparticles and adding a sodium salt to the reaction solution followed by mild heating before isolating the nanoparticles to aid sodium diffusion; and/or, using a ligand that is capable of capping the Cu(In,Ga)(S,Se)nanoparticles with one end of its molecular chain and binding to sodium atoms with the other end of its chain. 1. A process for preparing metal-doped nanocrystals comprising:{'sub': '2', 'adding a sodium salt to a mixture of copper-, indium-, and gallium-containing reagents at the beginning of a synthesis reaction of Cu(In,Ga)(S,Se)nanoparticles.'}2. The process of wherein the sodium salt is a sodium halide.3. The process of wherein the sodium halide is sodium chloride.4. The process of wherein the sodium halide is sodium fluoride.52. The process of wherein the sodium halide is sodium bromide.6. The process of wherein the sodium salt is an organic sodium salt.7. The process of wherein the organic sodium salt is sodium acetate.8. The process of wherein the organic sodium salt is sodium oleate.9. The process of wherein the organic sodium salt is a sodium dialkyldithiocarbamate.10. The process of wherein the sodium dialkyldithiocarbamate is sodium diethyldithiocarbamate.11. The process of wherein the sodium dialkyldithiocarbamate is sodium dimethyldithiocarbamate.12. The process of wherein the sodium dialkyldithiocarbamate is sodium methylhexyldithiocarbamate.13. The process of wherein the sodium dialkyldithiocarbamate is sodium ethylhexyldithiocarbamate.14. A process for preparing metal-doped nanocrystals comprising: ...

Preparation of Copper-Rich Copper Indium (Gallium) Diselenide/Disulphide Nanoparticles

A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices. 1. CIGS nanoparticles prepared by a process , the process comprising:heating a copper salt together with at least one salt selected from the group consisting of indium salts and gallium salts in a solvent at a first temperature to produce a reaction solution;adding an organo-chalcogen precursor to the reaction solution;heating the reaction solution to a second temperature while stirring for a first time interval;cooling the reaction solution to room temperature; andisolating nanoparticles from the reaction solution.2. CIGS nanoparticles as recited in claim 1 , wherein the molar ratio of Cu salts to the combined total of In and Ga salts is between about 1:0.65 and about 1:0.85.3. CIGS nanoparticles as recited in claim 1 , wherein the preparation process further comprises:cooling the reaction solution to a third temperature and stirring for a second time interval after heating the reaction solution to a second temperature.4. A method for preparing CIGS nanoparticles claim 1 , the method comprising:mixing salts selected from the group consisting of copper salts, indium salts and gallium salts in a solvent at a first temperature to produce a reaction solution;adding an organo-chalcogen precursor to the reaction solution;heating the reaction solution to a first temperature while stirring for a first time interval;heating the ...

CHEMICAL VAPOR DEPOSITION METHOD FOR FABRICATING TWO-DIMENSIONAL MATERIALS

A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSeand MoSe, is based on a chemical vapor deposition approach that uses HSe or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers. 1. A method of synthesizing a metal chalcogenide nanosheet comprising:reacting a gaseous selenium precursor with a metal precursor.2. The method of claim 1 , wherein the metal chalcogenide nanosheet is selected from the group consisting of: WSe; MoSe; NbSe; PtSe; ReSe; TaSe; TiSe; ZrSe; ScSe; VSe; GaSe; GaSe; BiSe; GeSe; InSe; InSe; SnSe; SnSe; SbSe; ZrSe; MnInSe; MgInSe; PbBiSe; SnPSe; and PdPSe; and alloys and doped derivatives thereof.3. The method of claim 1 , wherein the metal precursor is selected from the group consisting of: a metal; a metal diselenide bulk powder; a metal oxide; an inorganic precursor; an organometallic precursor; a metal alkyl precursor; an ethylhexanoate salt; and bis(ethylbenzene)molybdenum.4. The method of claim 1 , wherein the gaseous selenium precursor is selected from the group consisting of: HSe; an alkyl selenide; and an aryl selenide.5. The method of claim 1 , further comprising reacting the gaseous selenium precursor with the metal precursor in the presence of a reducing gas.6. The method of claim 1 , further comprising reacting the gaseous selenium precursor with the metal precursor in the presence of HS.7. The method of claim 1 , wherein the gaseous selenium precursor is mixed with a ligand.8. The method of claim 7 , wherein the ligand is selected from the group consisting of: an alkane thiol; an alkane selenol; and a combination of an alkane thiol and an alkane selenol.9. The method of claim 1 , further comprising reacting the gaseous selenium precursor with the metal precursor in a chemical vapor ...

Methods for preparing Cu2ZnSnS4 nanoparticles for use in thin film photovoltaic cells

Materials and methods for preparing CuZnSnS(CZTS) layers for use in thin film photovoltaic (PV) cells are disclosed herein. The CZTS materials are nanoparticles prepared by a colloidal synthesis in the presence of a labile organothiol. The organothiol serves as both a sulphur source and as a capping ligand for the nanoparticles. 1. A process for making CuZnSnSnanoparticles , comprising:combining a copper precursor, a zinc precursor and a tin precursor in the presence of an organothiol ligand at a temperature between room temperature and about 200° C. to form a dispersion or solution; and, heating the dispersion or solution sufficiently to induce nanoparticle formation.2. The process recited in claim 1 , wherein the copper precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.3. The process recited in claim 1 , wherein the copper precursor is copper (I) acetate.4. The process recited in claim 1 , wherein the zinc precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.5. The process recited in claim 1 , wherein the zinc precursor is zinc (II) acetate.6. The process recited in claim 1 , wherein the tin precursor is a tin (IV) chloride solution claim 1 , fuming tin (IV) chloride claim 1 , tin (IV) acetate claim 1 , tin (IV) bis(acetylacetonate) dichloride claim 1 , triphenyl(triphenylmethyl) tin claim 1 , or tin (IV) chloride pentahydrate.7. The process recited in where the tin precursor is tin (IV) chloride as a solution in dichloromethane.8. The process recited in claim 1 , wherein the organothiol ligand is an alkanethiol claim 1 , alkenethiol or aromatic thiol.9. The process recited in claim 1 , wherein the organothiol ligand has a boiling point in the range 190-300° C.10. The process recited in claim 1 , wherein the organothiol ligand is 1-dodecanethiol.11. The process recited in claim 1 , wherein the process comprises:a. providing the copper precursor, the zinc precursor, the tin ...

Metal-doped Cu(In,Ga)(S,Se)2 Nanoparticles

Various methods are used to provide a desired doping metal concentration in a CIGS-containing ink when the CIGS layer is deposited on a photovoltaic device. When the doping metal is antimony, it may be incorporated by: adding an antimony salt together with copper-, indium- and/or gallium-containing reagents at the beginning of the synthesis reaction of Cu(In,Ga)(S,Se)nanoparticles; synthesizing Cu(In,Ga)(S,Se)nanoparticles and adding an antimony salt to the reaction solution followed by mild heating before isolating the nanoparticles to aid antimony diffusion; and/or, using a ligand that is capable of capping the Cu(In,Ga)(S,Se)nanoparticles with one end of its molecular chain and binding to antimony atoms with the other end of its chain. 1. A process for preparing metal-doped nanocrystals comprising:{'sub': '2', 'adding an antimony salt to a mixture of copper-, indium-, and gallium-containing reagents at the beginning of a synthesis reaction of Cu(In,Ga)(S,Se)nanoparticles.'}2. The process of claim 1 , wherein the antimony salt is an antimony halide.3. The process of claim 2 , wherein the antimony halide is antimony chloride.4. The process of claim 2 , wherein the antimony halide is antimony fluoride.5. The process of claim 2 , wherein the antimony halide is antimony iodide.6. The process of claim 2 , wherein the antimony halide is antimony bromide.7. The process of claim 1 , wherein the antimony salt is an organic antimony salt.8. The process of claim 7 , wherein the organic antimony salt is antimony acetate.9. The process of claim 7 , wherein the organic antimony salt is triphenylantimony.10. The process of claim 7 , wherein the organic antimony salt is tris(dimethylamino)antimony.11. The process of claim 7 , wherein the organic antimony salt is an antimony dialkyldithiocarbamate.12. The process of claim 11 , wherein the antimony dialkyldithiocarbamate is antimony diethyldithiocarbamate.13. The process of claim 11 , wherein the antimony dialkyldithiocarbamate is ...

Illuminated signage using quantum dots

An illuminated sign has a primary light source in spaced apart relation to a transparent or translucent substrate having quantum dot phosphors printed or coated thereon. The primary light source may be a blue LED, a white LED or an LED having a significant portion of its emission in the ultraviolet region of the spectrum. The LED may be a backlight for the transparent or translucent substrate and/or an edge light, a down light or an up light.

Cu2znsns4 nanoparticles

Preparation of copper selenide nanoparticles

A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide- containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent are also disclosed.

Encapsulated quantum dots

Illuminated signage using quantum dots

An illuminated sign has a primary light source in spaced apart relation to a transparent or translucent substrate having quantum dot phosphors printed or coated thereon. The primary light source may be a blue LED, a white LED or an LED having a significant portion of its emission in the ultraviolet region of the spectrum. The LED may be a backlight for the transparent or translucent substrate and/or an edge light, a down light or an up light.

Group 13 selenide nanoparticles

A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an M x Se y semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

Encapsulated nanoparticles

The present invention relates to a method for producing encapsulated nanoparticles by dispersing said nanoparticles and an encapsulating medium in a common solvent to form a first solution system and treating said first solution system with a stimulus suitable to induce simultaneous aggregation of the nanoparticles and the encapsulating medium.

Synthesis of metal oxide semiconductor nanoparticles from a molecular cluster compound

A method of preparing metal oxide nanoparticles is described herein. The method involves reacting nanoparticle precursors in the presence of a population of molecular cluster compounds. The molecular cluster compound may or may not contain the same metal as will be present in the metal oxide nanoparticle. Likewise, the molecular cluster compound may or may not contain oxygen. The molecular cluster compounds acts a seeds or templates upon which nanoparticle growth is initiated. As the molecular cluster compounds are all identical, the identical nucleation sites result in highly monodisperse populations of metal oxide nanoparticles.

Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells

Nanoparticles containing lUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200°C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ~40°C lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

分子クラスタ化合物からの金属酸化物ナノ粒子の合成

【課題】溶解性が良好で、高い光学特性を実現し、単離可能な、商業的規模に拡大できるＩＩＢ族酸化物ナノ粒子の提供。 【解決手段】ＩＩＢ族金属酸化物結晶コアと、分子クラスタ化合物とを含んでおり、これらは、同じＩＩＢ族金属と酸素とを含んでいてもいなくともよく、ＩＩＢ族金属酸化物結晶コアは分子クラスタ化合物上で成長し、その上に層を形成しているナノ粒子。 【選択図】図１

自分子團簇化合物合成金屬氧化物半導體奈米粒子

本發明係描述製備金屬氧化物奈米粒子之方法。該方法涉及使奈米粒子前驅體在一群分子團簇化合物存在下進行反應。該分子團簇化合物可含有或可不含有與將存在於該金屬氧化物奈米粒子中相同的金屬。同樣，該分子團簇化合物可含有或可不含有氧。該等分子團簇化合物充當引發奈米粒子生長之晶種或模板。因為該等分子團簇化合物皆為相同的，所以相同成核位點產生高度單分散性金屬氧化物奈米粒子群。

由分子簇合物合成的金屬氧化物半導體納米粒子

Cu2xsny4 nanoparticles

Materials and methods for preparing Cu 2 XSnY 4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

Cu2XSnY4 nanoparticles

Materials and methods for preparing Cu2XSnY4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

Chemical vapor deposition method for fabricating two-dimensional materials

A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.

Preparation of copper-rich copper indium (gallium) diselenide/disulfide nanoparticles

A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.