25-02-2021 дата публикации
Номер: US20210054496A1
An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains GaInSnO, ZnGaO, and InGaZnO. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]≥37 atomic %, [Sn]≤15 atomic %, and [Ga]/([In]+[Zn])≥0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively. 2. The oxide sintered body according to claim 1 , wherein when the oxide sintered body is subjected to X-ray diffraction claim 1 , the GaInSnO claim 1 , ZnGaO claim 1 , and InGaZnOsatisfy expression (4):{'br': None, 'sub': 2', '6', '2', '16', '2', '4', '4, '[GaInSnO]+[ZnGaO]+[InGaZnO]≥0.9\u2003\u2003(4),'}where{'sub': 2', '6', '2', '16', '2', '6', '2', '16', '2', '6', '2', '16', '2', '4', '4, '[GaInSnO]═I(GaInSnO)/(I(GaInSnO)+I(ZnGaO)+I(InGaZnO)+I(other crystal phases)),'}{'sub': 2', '4', '2', '4', '2', '6', '2', '16', '2', '4', '4, '[ZnGaO]=I(ZnGaO)/(I(GaInSnO)+I(ZnGaO)+I(InGaZnO)+I(other crystal phases)), and'}{'sub': 4', '4', '2', '6', '2', '16', '2', '4', '4, 'claim-text': {'sub': 2', '6', '2', '16', '2', '4', '4', '2', '6', '2', '16', '2', '4', '4', '2', '6', '2', '16', '2', '4', '4, 'where, I(GaInSnO), I(ZnGaO), and I(InGaZnO) are respectively diffraction peak intensities of GaInSnOphase, ZnGaOphase and InGaZnOphase identified by X-ray diffraction, and I(other crystal phases) is a diffraction peak intensity of a crystal phase identified by X-ray diffraction other than GaInSnO, ZnGaO, and InGaZnO.'}, '[InGaZnO]=I(InGaZnO)/(I(GaInSnO)+I(ZnGaO)+I(InGaZnO)+I(other crystal phases));'}3. The oxide sintered body according to claim 1 , wherein an average grain size of the oxide sintered body is 10 μm or less.4. The oxide sintered body according to claim 3 , wherein the average grain size is 7 μm or less.5. The oxide sintered body according to claim 1 , wherein the atomic ratio of Sn satisfies{'br': None, '2 atomic %≤[Sn].'}6. A sputtering target obtained ...
Подробнее