SEALING SYSTEM

There is provided a sealing system with improved durability. 1. A sealing system for sealing an annular clearance between an inner peripheral face of a shaft hole formed in a housing and an outer peripheral face of a shaft which is inserted into the shaft hole and reciprocates relatively with respect to the housing , the system comprising:a main seal for preventing leakage of a sealed fluid to an atmosphere side; anda dust seal disposed on an atmosphere side of the main seal to prevent entry of dust into a sealed fluid side,wherein the dust seal includes a first dust seal and a second dust seal provided on the atmosphere side of the first dust seal, each of the first dust seal and the second dust seal has a seal lip for sliding on the outer peripheral face of the shaft,the seal lip of the first dust seal is made of polyurethane rubber,the seal lip of the second dust seal is made of rubber having higher flexibility than the polyurethane rubber and is only a seal lip extending toward the atmosphere side.2. The sealing system according to claim 1 , wherein a tip end of the seal lip of the second dust seal is formed by an edge and is formed so that the edge protrudes toward the atmosphere side when it is in contact with the surface of the shaft. The present invention relates to a sealing system including a dust seal.For example, in a hydraulic cylinder for a construction machine, a sealing system including a plurality of seals is used to seal an annular clearance between a cylinder (housing) and a piston (shaft). This sealing system includes a main seal for preventing leakage of a fluid such as oil to be sealed and a dust seal for preventing entry of dust into a sealed area. In general, only one dust seal made of polyurethane rubber is disposed on an atmosphere side.However, in case of use under extremely harsh environments, two dust seals are used side by side. An example of the use under the extremely harsh environments is use at an iron ore mine where dust includes ...

Heat-resistant, light-shielding film, production thereof, and aperture and light intensity adjusting device using the same

A heat-resistant, light-shielding film having high light shielding capacity, high heat resistance, high sliding characteristics, low surface gloss and high electroconductivity, and useful for optical device parts, e.g., shutter or aperture blades for digital cameras and digital video cameras, and aperture blades for adjusting light intensity for projectors; method for producing the film; and aperture and light intensity adjusting device using the film. The heat-resistant, light-shielding film comprising a heat-resistant resin film base (A) resistant to 200° C. or higher, coated, on one or both sides, with an Ni-base metallic film (B) having a thickness of 50 nm or more by sputtering and then with a low-reflectivity film (C) of Ni-base oxide also by sputtering, and having a surface roughness (arithmetic average height Ra) of 0.1 to 0.7 m.

Oxide sintered body, manufacturing method therefor, manufacturing method for transparent conductive film using the same, and resultant transparent conductive film

An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Heat-resistant light-shading film and production method thereof, and diaphragm or light intensity adjusting device using the same

A heat-resistant light-shading film having high light shading capacity, high heat resistance, high sliding characteristics, low surface gloss and high electroconductivity, and useful for optical device parts such as shutter blades or diaphragm blades for diaphragm blades of lens shutter and the like for digital cameras and digital video cameras and diaphragm blades of light intensity adjusting device for projectors, and a method for producing the same. The heat-resistant light-shading film is a film comprising a resin film substrate (A) having a heat resistance of 155° C. or higher and a light-shading layer (B) of crystalline metal carbide film (MeC) formed on one side or both sides of the resin film substrate (A), characterized in that the light-shading layer (B) has a thickness of 100 nm or more and a surface roughness of 0.1 to 2.1 μm (arithmetic average height Ra), and content of carbon element (C) in the metal carbide film (MeC) is 0.3 or more in atomic number ratio to the total metal ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Semiconductor device and an image sensing device

SI in a semiconductor device in which a plurality of semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module, is to be improved. The semiconductor device comprises a first semiconductor chip and a second semiconductor chip mounted over a package substrate which has a plurality of bonding pads arranged along the edges. The first semiconductor chip has a plurality of bonding pads for analog signals, and the second semiconductor chip has a plurality of bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.

Oxide sintered body, target, transparent conductive film obtained by using the same, and transparent conductive substrate

An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same

A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GalnO3 phase of a beta-Ga2O3-type structure, or GalnO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 mum, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Manufacturing method of a semiconductor device

This invention aims at improvement in reliability of a semiconductor device. In this invention, a semiconductor wafer is irradiated with laser light so as to have a fractured layer formed in the interior of the semiconductor wafer, the semiconductor wafer is mounted on a dicing tape via paste (adhesive layer), then the paste of the dicing tape is hardened by UV irradiation or cooling, and subsequently the semiconductor wafer is bent (breaking). By this process, shifting and movement of semiconductor chips can be prevented because the paste has been hardened at the time of the bending. As a result, the semiconductor chip can be prevented from interfering with adjacent chips and can also be inhibited from generating chipping; therefore, the reliability of a semiconductor device can be improved.

Fabrication method of semiconductor circuit device

When a semiconductor wafer is formed to be thin, steps need to be taken to prevent warping of the wafer. For this purpose, a protective tape is affixed to a surface of the semiconductor wafer, and a back side of the semiconductor wafer is then ground to a predetermined thickness. A die bonding film is affixed to the back side of the semiconductor wafer, and a dicing tape is affixed on the die bonding film. The dicing tape that is affixed to the semiconductor wafer is held by a holding jig. The protective tape is peeled off from the wafer surface, and the die bonding film is heated to improve the adherence between the semiconductor wafer and the die bonding film. The semiconductor wafer is subjected to dicing for separation into individual semiconductor chips. The semiconductor chips are then die-bonded in a predetermined number onto a wiring substrate to fabricate a semiconductor device.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

OXIDE SINTERED BODY AND PRODUCTION METHOD THEREFOR, TARGET, AND TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE SUBSTRATE OBTAINED BY USING THE SAME

A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a -Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Semiconductor device manufacturing method and semiconductor device

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Hydraulic cylinder

The hydraulic cylinder having a portion on a side of a lip tip end of an annular clearance between an inner circumferential face of a shaft hole of a cylinder and a piston is made up of a minute clearance in order to suppress protrusion of the lip, wherein an annular clearance area for suppressing occurrence of the cavitation and for shortening an axial distance of the annular clearance portion made up of the minute clearance is formed on an opposite side of the annular clearance portion from a mounting groove.

OXIDE SINTERED BODY, TARGET, TRANSPARENT CONDUCTIVE FILM OBTAINED BY USING THE SAME, AND TRANSPARENT CONDUCTIVE SUBSTRATE

An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target. 1: An oxide sintered body , characterized by comprising zinc oxide and magnesium , and wherein a content of magnesium is from 0.02 to 0.30 as an atom number ratio of Mg/(Zn+Mg).2: The oxide sintered body according to claim 1 , characterized in that the content of magnesium is from 0.05 to 0.18 as the atom number ratio of Mg/(Zn+Mg).3: The oxide sintered body according to claim 1 , characterized in that specific resistance thereof is equal to or lower than 50 kΩcm.4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10: The oxide sintered body according to claim 1 , characterized in that the oxide sintered body contains substantially no magnesium oxide phase.11: The oxide sintered body according to claim 1 , characterized in that the oxide sintered body is obtained by formation and sintering by using a hot press method.12: A target obtained by processing the oxide sintered body according to .13: The target according to claim 12 , characterized in that the density thereof is equal to or higher than 5.0 g/cm claim 12 , and it is used in a sputtering method.14: The target according to claim 12 , characterized in that the density thereof is from 3.5 to 4.5 g/cm claim 12 , and it is used in an ...

Semiconductor device and a manufacturing method of the same

The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

Serial data transfer apparatus

A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

Semiconductor device, semiconductor wafer and manufacturing method of the same

In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.

Device generating sound

In the present invention, a device is provided with a main surface member, a piezoelectric body plate, a first support part, and a housing. The main surface member is used as a vibration plate. The piezoelectric body plate vibrates according to an electric signal. The first support part supports the piezoelectric body plate. The housing has a second support part that supports the main surface member and extends in a prescribed direction that intersects the main surface member. The first support part is secured to the second support so that the second support part vibrates in the prescribed direction according to the vibration of the piezoelectric body plate. The vibration of the piezoelectric body plate is transmitted to the main surface member via the first support part and the second support part, and due to this the main surface member vibrates to generate a sound.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Gas Barrier Transparent Resin Substrate Method for Manufacturing Thereof, and Flexible Display Element Using Barrier Transparent Resin Substrate

The object of this invention is to provide a transparent plastic substrate having better surface smoothness than prior substrates, as well as having high transparency and high gas-barrier characteristics, and to provide a flexible display element using that uses this substrate. For that purpose, a gas-barrier transparent plastic substrate is obtained such that a transparent oxide film comprising either of a tin-oxide amorphous film, or tin-oxide amorphous film containing at least one added element that is selected from among the group of silicon, germanium, aluminum, cerium and indium, at a ratio of 0.2 to 45 atomic % with respect to the total of added element and tin, is formed as gas-barrier layer on at least one surface of a plastic film base material. It is possible that the gas-barrier transparent plastic substrate be formed as bilayer where a silicon-oxide film or silicon-oxynitride film is formed on the transparent oxide film. When a transparent electrode film is further formed on ...

Color-bar signal generation unit compatible with plurality of television signal formats

A color-bar signal generation unit compatible with a plurality of television signal formats is provided. The color-bar signal generation unit in accordance with the present invention includes first, second, and third color-bar signal generators for generating a color-bar signal that represents a 16:9 aspect ratio color-bar test pattern, and a color-bar signal switch for switching outputs of the generators. The color-bar signal is structured to contain a 75% color-bar signal and 100% color-bar signals. The 75% color-bar signal represents a portion of the color-bar test pattern defined with an aspect ratio of 4:3 and serves as an NTSC color-bar signal. The 100% color-bar signals represent portions of the color-bar test pattern outside the portion with the aspect ratio of 4:3 and serve as components of an HD color-bar signal. Consequently, the color-bar signal can be used in common for the HD format stipulating the aspect ratio of 16:9 and the NTSC format stipulating the aspect ratio of 4: ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor

There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode

An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 kΩm or less.

SEALING DEVICE

A sealing device includes: an annular seal that is disposed on an outer periphery of a rod of a hydraulic cylinder further on a side of an extending direction than a cylinder head of the hydraulic cylinder and that has a pair of opposing first facing surfaces; a holding member disposed on an outer periphery of the seal; and a fixing member disposed on an outer periphery of the holding member, the fixing member having a tapered inner surface that contacts an outer surface of the holding member and that has an inner diameter increasing toward a retracting direction. 1. A sealing device comprising:an annular seal that is disposed on an outer periphery of a rod of a hydraulic cylinder further on a side of an extending direction than a cylinder head of the hydraulic cylinder and that has a pair of opposing first facing surfaces;a holding member disposed on an outer periphery of the seal; anda fixing member disposed on an outer periphery of the holding member, the fixing member having a tapered inner surface that contacts an outer surface of the holding member and that has an inner diameter increasing toward a retracting direction.2. The sealing device according to claim 1 ,wherein the pair of first facing surfaces comes in close contact with each other with the fixing member being disposed on the outer periphery of the holding member.3. The sealing device according to claim 1 ,wherein the outer surface of the holding member has a tapered shape in which an outer diameter increases toward the retracting direction.4. The sealing device according to claim 1 ,wherein the holding member has a pair of opposing second facing surfaces.5. The sealing device according to claim 4 ,wherein the pair of second facing surfaces comes in close contact with each other with the fixing member being disposed on the outer periphery of the holding member.6. The sealing device according to claim 4 ,wherein the holding member includes: a first holding member that is disposed on a part of an outer ...

Oxide evaporation material, transparent conducting film, and solar cell

An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

The lowering of the manufacturing yield of semiconductor products resulting from the contamination impurities from the back surface of a semiconductor wafer is suppressed. When making thin semiconductor wafer 1, the first crushing layer formed by grinding the back surface of semiconductor wafer 1 with the first and second abrasive which has fixed abrasive is removed. Thereby, the die strength after dividing or mostly dividing semiconductor wafer 1 and making a chip is secured. Then, from the back surface side of semiconductor wafer 1, laser beam 16 is irradiated in the predetermined region of the predetermined depth from the back surface of semiconductor wafer 1, and for example, second crushing layer 15 with the gettering function of less than 1.0 μm, less than 0.5 μm, or less than 0.1 μm in thickness is formed newly.

Light-transmitting substrate, display device, signal device, and illumination device

The light-transmitting substrate of the present invention comprises a substrate that transmits at least a light of a predetermined wavelength, and a conductor pattern that is disposed on the substrate, and generates heat to raise temperature of the surface of the substrate when it is supplied with an electric current. The conductor pattern is directly disposed on the substrate without any adhesive layer.

Transparent conductive oxide film, photoelectric conversion element, and method for producing photoelectric conversion element

Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film 8 comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer 7 side, and a second transparent conductive oxide film 9 comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film 8 from the photoelectric conversion layer 7.

Manufacturing Method of Semiconductor Integrated Circuit Device

After performing rough grinding to the back surface of a semiconductor wafer using the first grinding material (for example, particle size of polish fine powder from #320 to #360) and making the thickness of the semiconductor wafer, for example less than 140 □m, less than 120 □m, or less than 100 □m, the back surface of the semiconductor wafer being performed fine finish grinding using the third grinding material (for example, particle size of polish fine powder from #3000 to #100000), the thickness of the semiconductor wafer becomes, for example less than 100 □m, less than 80 □m, or less than 60 □m, and the relatively thin second crush layer, for example the second crush layer of the thickness of less than 0.5 □m, less than 0.3 □m, or less than 0.1 □m is formed on the back surface of the semiconductor wafer. Thereby, without reducing the die strength of a chip, at the same time permeation of the pollution impurities from the back surface of the semiconductor wafer and further, diffusion ...

Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element

A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7x10-4 Omegacm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode

An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.

Fabrication Method of Semiconductor Integrated Circuit Device

A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.

TRANSPARENT OXIDE ELECTRODE FILM AND MANUFACTURING METHOD THEREOF, TRANSPARENT ELECTRODONDUCTIVE BASE MATERIAL, SOLAR CELL AND PHOTO DETECTION ELEMENT

A transparent oxide electrode film is provided to have crystalline indium oxide as its main component in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resistivity of the transparent oxide electrode film is 5.7×10−4 Ωcm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

EBULLIENT COOLING DEVICE

An ebullient cooling device having a simple structure and capable of limiting the bubbles to an appropriate volume. The ebullient cooling device for cooling a heat generating element is provided with a plurality of vertically arranged cooling channels comprising a lower channel ( 2 ), a middle channel ( 3 ) and un upper channel ( 4 ). Each cooling channel has cooling fins ( 12 ) for guiding a refrigerant to flow in a vertical direction, and a vapor discharge path ( 16 ) formed at the side of the cooling fins ( 12 ) that is opposite the side in contact with the heat generating element. Furthermore, flow path partition/vapor discharge guiding plates ( 18 ) are provided between the cooling channels so that the bubbles that have been generated are guided to the vapor discharge path ( 16 ) and prevented from moving into the subsequent cooling channel.

SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP THAT USES THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. 1. A manufacturing method for a semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer , and a transparent electrode that is provided on the p-type semiconductor layer , comprising steps of:forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film; andperforming an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.2. The manufacturing method for a semiconductor light-emitting film according to claim 1 , wherein in case that the transparent conductive film is formed from the amorphous oxide of indium and gallium claim 1 , micro crystals are formed in the transparent conductive film by the annealing process claim 1 , and the amorphous state is maintained.3. The manufacturing method for a semiconductor light-emitting film according to claim 1 , wherein in case that the transparent conductive film is formed from the amorphous oxide of indium claim 1 , gallium and tin claim 1 , the transparent conductive film is crystallized by the annealing process.4. The manufacturing method for a semiconductor light-emitting film according to claim 1 , further comprising a step of patterning the transparent conductive film before performing the annealing process.5. The manufacturing method for a semiconductor light-emitting film according to claim 1 , wherein the annealing process is performed in an atmosphere that does not include oxygen.6. The manufacturing method for a semiconductor light-emitting film according to claim 1 , wherein the annealing process is performed in a vacuum atmosphere claim 1 , a nitrogen ...

OXIDE SINTERED BODY, MANUFACTURING METHOD THEREFOR, MANUFACTURING METHOD FOR TRANSPARENT CONDUCTIVE FILM USING THE SAME, AND RESULTANT TRANSPARENT CONDUCTIVE FILM

An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

OXIDE SINTERED BODY AND PRODUCTION METHOD THEREFOR, TARGET, AND TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE SUBSTRATE OBTAINED BY USING THE SAME

A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. 1. An oxide sintered body comprising indium and gallium as an oxide , characterized in that an InOphase with a bixbyite-type structure forms a major crystal phase , and a GaInOphase of a β-GaO-type structure , or GaInOphase and a (Ga ,In)Ophase is finely dispersed therein , as a crystal grain having an average particle diameter of equal to or smaller than 5 μm , anda content of gallium is from 10 to 25% by atom as atom number ratio of Ga/(In+Ga).2. (canceled)4. An oxide sintered body comprising indium and gallium as an oxide , characterized in that an InOphase with a bixbyite-type structure forms a major crystal phase , and a GaInOphase of a β-Ga2O3-type structure , or GaInOphase and a (Ga ,In)Ophase is finely dispersed therein , as a crystal grain having an average particle diameter of equal to or smaller than 5 μm , andother than indium and gallium, further one or more kinds of additive components selected from tin or germanium are contained, and the content of gallium is from 2 to 30% by atom as atom number ratio of Ga/(In+Ga+Sn+Ge), and the content of the additive components is from 1 to 11% by atom as atom number ratio of (Sn+Ge)/(In+Ga+Sn+Ge).5. The oxide sintered body according to claim 4 , characterized in that the content of gallium is from 2 to 20% by atom as atom number ratio of Ga/(In+Ga+Sn+Ge) claim 4 , and the content of one or more kinds selected from tin or germanium is from 2 to 10% by atom as atom number ratio of (Sn+Ge)/(In+Ga+Sn+Ge).7. A production method for the oxide sintered body according to claim 1 , by mixing the raw material powders comprising indium oxide powders and gallium oxide powders claim 1 , or by ...

Capacitive touch panel, manufacturing method therefor and liquid crystal display apparatus provided with the touch panel

A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, even in the case where a production process with lower cost and higher heat load is adopted, by application of a transparent conductive film with high heat resistance; a manufacturing method therefor, and a liquid crystal display apparatus. A capacitive touch panel having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like.

Transparent conductive film, sintered body target for transparent conductive film fabrication, and transparent conductive base material and display device using the same

A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×103·cm to 8.0×103·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Absorption type multi-layer film ND filter

In an absorption type multi-layer film ND filter having a thin substrate and provided thereon first and second absorption type multi-layer films which attenuate transmitted light, the first and second absorption type multi-layer films are constituted of multi-layer films each consisting essentially of dielectric layers formed of SiO2, Al2O3 or a mixture of these and metal film layers formed of Ni alone or an Ni alloy; the layers being alternately layered on the substrate; and the first and second absorption type multi-layer films are so formed on one side and the other side, respectively, of the substrate as to have a film structure in which they are symmetrical to each other interposing the substrate between them, and the warpage of the substrate has been controlled at a curvature of radius of 500 mm or more.

MULTI-CHIP SEMICONDUCTOR DEVICE

A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.

FILM TYPE LIGHT SHADING PLATE, AND DIAPHRAGM, DIAPHRAGM DEVICE FOR ADJUSTING A LIGHT INTENSITY OR SHUTTER USING THE SAME

The film type light shading plate widely applicable to optical parts in which a light shading thin film having sufficient light shading performance and low reflectivity in the visible range is formed on a resin film of a base substrate, and further a diaphragm for digital camera or digital video camera, a diaphragm device for adjusting a light intensity of projector or a shutter to which said film type light shading plate is applied. The film type light shading plate in which a light shading thin film (B) comprising of a crystalline titanium oxy-carbide film is formed on at least one surface of the resin film substrate (A), characterized in that the light shading thin film (B) has an average optical density of 4.0 or more in wavelength 400 to 800 nm by a carbon content of 0.6 or more as C/Ti atomicity ratio, an oxygen content of 0.2 to 0.6 as O/Ti atomicity ratio, and a total thickness of the light shading thin film (B) of 260 nm or more.

BLACK COATING FILM AND PRODUCTION METHOD THEREFOR, BLACK LIGHT SHADING PLATE, AND DIAPHRAGM, DIAPHRAGM DEVICE FOR LIGHT INTENSITY ADJUSTMENT, SHUTTER USING THE SAME, AND HEAT RESISTANT LIGHT SHADING TAPE

A heat resistant black coating film which is capable of making the surface of optical members to be low reflection property and black property, a black light shading plate having a resin film using the same as a base substrate, and a diaphragm, a diaphragm device for light intensity adjustment and a shutter using the same, and heat resistant light shading tape. They are provided by a black coating film (A), where a titanium oxide film containing titanium and oxygen as main components, and having an oxygen content of from 0.7 to 1.4, as atomicity ratio O/Ti, is formed on an opaque or translucent substrate, characterized in that the titanium oxide film takes a constitution of fine columnar crystals assembled, where the longitudinal direction of the crystal extends in a film thickness direction, has protrusions at the film surface, and has a film thickness of equal to or thicker than 50 nm; and a black light shading plate, wherein the metallic light shading film (B), having a film thickness ...

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

TURBOCHARGER SYSTEM

A turbocharger system for simultaneously improving a fuel efficiency and obtaining a satisfactory hill start performance due to a downsized engine. The system includes an electric assist turbocharger which includes a turbine disposed in an exhaust passage of an engine and driven by exhaust gas, a compressor disposed in an intake passage and driven by a rotational torque of the turbine, and an electric motor assisting a driving force of the compressor and an electric motor control unit which drives the electric motor when detecting a start operation at a sloping road. 15-. (canceled)6. A turbocharger system comprising:an electric assist turbocharger which includes a turbine disposed in an exhaust passage of an engine and driven by an exhaust gas, a compressor disposed in an intake passage and driven by a rotational torque of the turbine, and an electric motor assisting a driving force of the compressor; andan electric motor control unit which drives the electric motor when detecting a start operation at a sloping road.7. The turbocharger system according to claim 6 ,wherein the electric motor control unit is configured to drive the electric motor at a rotation speed in response to a slope of a road where a vehicle starts to move.8. The turbocharger system according to claim 6 ,wherein the electric motor control unit is configured to drive the electric motor in advance at a start time when the slope of the road where the vehicle starts to move is larger than a predetermined threshold value.9. The turbocharger system according to claim 7 ,wherein the electric motor control unit is configured to drive the electric motor in advance at a start time when the slope of the road where the vehicle starts to move is larger than a predetermined threshold value.10. The turbocharger system according to claim 8 ,wherein the electric motor control unit is configured to correct the rotation speed in response to the slope of the road where the vehicle starts to move by an atmospheric ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

METHOD FOR TREATMENT OF IRON-BASED METAL SURFACE EXPOSED TO SUPERHEATED STEAM

The present invention provides a surface treatment method for suppressing the formation and growth of superheated steam oxide scale on an iron-based metal surface exposed to superheated steam, comprising treating said iron-based metal surface with a surface-treatment agent which comprises a polyoxy saturated aliphatic mono- or di-carboxylic acid or a salt thereof and an amine compound represented by the following formula (I): 2. The method of claim 1 , wherein said amine is an amine represented by the formula (I) wherein n is an integer of 0-3.3. The method of claim 1 , wherein said amine is monoethanolamine or tetraethylenepentamine.4. The method of claim 1 , wherein said amine is tetraethylenepentamine.5. The method of claim 1 , wherein said polyoxy saturated aliphatic mono- or di-carboxylic acid or said salt thereof is selected from the group consisting of gluconic acid claim 1 , tartaric acid and a salt thereof.6. The method of claim 1 , wherein said surface-treatment agent further comprises an alkali metal hydroxide or an aliphatic cyclic amine.7. The method of claim 1 , wherein said treatment is carried out at a temperature of 120° C. to 380° C.8. The method of claim 1 , wherein said treatment is carried out at a temperature of 120° C. to 250° C.9. The method of claim 1 , wherein said treatment is carried out for a period of from 10 to 100 hours.10. The method of claim 1 , wherein said iron-based metal surface is an inner surface of a main or reheating steam pipe of a power plant.11. The method of claim 1 , wherein said amine is tetraethylenepentamine claim 1 , said polyoxy saturated aliphatic mono- or di-carboxylic acid or said salt thereof is selected from the group consisting of gluconic acid claim 1 , tartaric acid and a salt thereof claim 1 , said treatment is carried out at a temperature of 120° C. to 250° C. for a period of from 10 to 100 hours claim 1 , and said iron-based metal surface is an inner surface of a main or reheating steam pipe of a power ...

Boil Cooling Method, Boil Cooling Apparatus, Flow Channel Structure, and Applied Technology Field Thereof

In the process of boil cooling, boil cooling by nucleate boiling in a temperature area wherein transition boiling may occur is enabled to a larger cooling area. A boil cooling method of the present invention forms, with a surface of an object to be cooled ob or a surface of a heating member in close contact with the surface of the object to be cooled made to serve as a cooling surface, a main flow channel 10A and a sub-flow channel 10B for a cooling liquid from the side of the cooling surface in the above-described order, arranges a plurality of nozzles NZ penetrating a partition wall 10C separating the sub-flow channel 10B and the main flow channel 10A and protruding into the main flow channel 10A in a flow channel direction of the main flow channel, causes tip end parts of individual nozzles NZ to be in the vicinity of or in contact with the cooling surface, causes a cooling liquid 21 to circulate to the main flow channel 10A and the sub-flow channel 10B, and cools the cooling surface ...

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Sliding Member and Process for Producing the Same

Object: To provide a sliding member with a low friction coefficient in which, when fine dents are formed in a surface of the sliding member by dimpling using a laser, no hard raised portions are gerenrated, and which does not damage a mating member; and to provide a process for producing the sliding member. Solution Means: A sliding member comprising a polyamide resin and 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers, and having fine dents formed in a sliding surface thereof by dimpling using a laser; and a process for producing a sliding member comprising adding 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers to a polyamide resin, and forming fine dents in a sliding surface of the sliding member by dimpling using a laser.

MULTILAYER TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING SAME, AS WELL AS THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME

A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −2.18×[Al]+1.74≦[Ga]≦−1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −[Al]+0.30≦[Ga]≦−2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga).

Absorption type multi-layer film ND filter

An absorption type multi-layer film ND filter having a substrate and an optical multi-layer member consisting essentially of metal layers each composed chiefly of nickel (Ni) and dielectric layers each formed of any one of SiO₂, Al₂O₃ and a mixture of these; the layers being alternately layered on the substrate. An Ni type metallic material having a small wavelength dependence of transmittance in the visible spectral range is used in the metal layers serving as light attenuation layers, and this enables materialization of an ND filter which can attain transmittance attenuation that is flat for wavelengths.

Oxide sintered body and an oxide film obtained by using it, and a transparent base material containing it

The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

TABLET FOR ION PLATING, PRODUCTION METHOD THEREFOR AND TRANSPARENT CONDUCTIVE FILM

A tablet for ion plating which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body comprising indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), characterized in that said oxide sintered body has an In 2 O 3 phase of a bixbyite structure as a main crystal phase, has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase; and the oxide sintered body is produced by mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then molding the mixed powder, and sintering the molding by a normal pressure sintering method, or molding and sintering the mixed powder by a hot press method.

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminiscence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

SINTERED BODY TARGET FOR TRANSPARENT CONDUCTIVE FILM FABRICATION, TRANSPARENT CONDUCTIVE FILM FABRICATED BY USING THE SAME, AND TRANSPARENT CONDUCTIVE BASE MATERIAL COMPRISING THIS CONDUCTIVE FILM FORMED THEREON

A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Oxide sintered body and an oxide film obtained by using it, and a transparent base material containing it

The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminiscence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio ...

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Boil cooling method, boil cooling apparatus, flow channel structure, and applied technology field thereof

A boil cooling method forms, with a surface of an object to be cooled or a surface of a heating member in close contact with the surface of the object to be cooled made to serve as a cooling surface, a main flow channel and a sub-flow channel for a cooling liquid from the side of the cooling surface in the above-described order, arranges a plurality of nozzles penetrating a partition wall separating the sub-flow channel and the main flow channel and protruding into the main flow channel in a flow channel direction of the main flow channel, causes tip end parts of individual nozzles to be in the vicinity of or in contact with the cooling surface, causes a cooling liquid to circulate to the main flow channel and the sub-flow channel, and cools the cooling surface by boiling of the cooling liquid flowing through the main flow channel, and at the same time, supplies the cooling liquid from the side of the sub-flow channel through each of the nozzles to the vicinity of the cooling surface, and ...

TURBOCHARGER SYSTEM

A turbocharger system for ensuring a sufficient exhaust gas recirculation (“EGR”) amount in all operating conditions, and reducing NOx emission from an engine. The system includes an EGR controller that re-circulates a part of exhaust gas discharged from the engine to an intake side. The turbocharger is a power-assisted turbocharger including an electric motor that assists a drive force of a compressor. The EGR controller controls an amount of exhaust gas recirculated to the intake side so as to inhibit the generation of NOx regardless of an amount of oxygen necessary for combustion of the engine. An electric motor control unit drives the electric motor, by the control of the EGR controller, when the amount of oxygen necessary for the combustion of the engine is deficient.

Tablet for ion plating, production method therefor and transparent conductive film

A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In 2 O 3 phase of a bixbyite structure as a main crystal phase, has a CeO 2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then (b) molding the mixed powder, and sintering the molding by a normal pressure sintering method, or (b′) molding and sintering the mixed powder by a hot press method.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Oxide sintered body, manufacturing method therefor, manufacturing method for transparent conductive film using the same, and resultant transparent conductive film

The present invention relates to the oxide sintered body substantially containing zinc, tin and oxygen, useful as a target, which can be sputtered under charging of high DC power, without generation of arcing or crack, and a manufacturing method for an oxide transparent conductive film formable in high-speed, and the oxide transparent conductive film excellent in chemical resistance. The oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours ...

Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same

A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.

Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure

Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

Oxide sintered body, production method therefor, target, and transparent conductive film

A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

Fabrication method of semiconductor integrated circuit device

A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.

Неаt-rеsistаnt, light-shiеlding film, prоduсtiоn thеrеоf, аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе sаmе

А hеаt-rеsistаnt, light-shiеlding film hаving high light shiеlding саpасitу, high hеаt rеsistаnсе, high sliding сhаrасtеristiсs, lоw surfасе glоss аnd high еlесtrосоnduсtivitу, аnd usеful fоr оptiсаl dеviсе pаrts, е.g., shuttеr оr аpеrturе blаdеs fоr digitаl саmеrаs аnd digitаl vidео саmеrаs, аnd аpеrturе blаdеs fоr аdjusting light intеnsitу fоr prоjесtоrs; mеthоd fоr prоduсing thе film; аnd аpеrturе аnd light intеnsitу аdjusting dеviсе using thе film. Тhе hеаt-rеsistаnt, light-shiеlding film соmprising а hеаt-rеsistаnt rеsin film bаsе (А) rеsistаnt tо 200° С. оr highеr, соаtеd, оn оnе оr bоth sidеs, with аn Ni-bаsе mеtаlliс film (В) hаving а thiсknеss оf 50 nm оr mоrе bу sputtеring аnd thеn with а lоw-rеflесtivitу film (С) оf Ni-bаsе охidе аlsо bу sputtеring, аnd hаving а surfасе rоughnеss (аrithmеtiс аvеrаgе hеight Rа) оf 0.1 tо 0.7 m.

TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM LAMINATED BODY AND PRODUCTION METHOD OF SAME, AND SILICON-BASED THIN FILM SOLAR CELL

A transparent conductive film, useful in producing a highly efficient silicon-based thin film solar cell, superior in hydrogen reduction resistance and superior in optical confinement effect; a transparent conductive film laminated body using the same; a production method therefor; and a silicon-based thin film solar cell using this transparent conductive film or the transparent conductive film laminated body, as an electrode. It is provided by a transparent conductive film or the like, characterized by containing zinc oxide as a major component and at least one or more kinds of added metal elements selected from aluminum and gallium, whose content being within a range shown by the following expression (1), and having a surface roughness (Ra) of equal to or larger than 35.0 nm, and a surface resistance of equal to or lower than 65 Ω/□ 2. The transparent conductive film according to claim 1 , characterized in that haze ratio is equal to or higher than 8%.3. The transparent conductive film according to or claim 1 , characterized in that haze ratio is equal to or higher than 10%.4. The transparent conductive film according to or claim 1 , characterized in that haze ratio is equal to or higher than 16%.5. The transparent conductive film according to claim 1 , characterized in that the surface resistance is equal to or lower than 20 Ω/□.6. The transparent conductive film according to or claim 1 , characterized in that the surface resistance is equal to or lower than 15 Ω/□.7. A method for producing the transparent conductive film according to or forming a zinc oxide-based transparent conductive film (II) on a substrate claim 1 , by a sputtering method claim 1 , using an oxide sintered body target comprising zinc oxide as a major component and at least one or more kinds of added metal elements selected from aluminum and gallium claim 1 , characterized by performing film formation in high speed claim 1 , by setting a direct current input power density of equal to or higher ...

SERIAL DATA TRANSFER APPARATUS

A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption. 1. A serial data transfer apparatus comprising;a receiver coupled to a serial bus on which a primitive is transmitted toward the serial data transfer apparatus at a first time point and idle data are transmitted toward the serial data transfer apparatus during a first period starting at a second time point after the first time point, the idle data being transmitted from a destination apparatus which communicates with the serial data transfer apparatus;a transmitter coupled to a serial bus on which at least one of the idle data transmitted from the destination apparatus toward the serial data transfer apparatus is transmitted from the serial data transfer apparatus toward the destination apparatus during a second period starting after the second time point.2. The serial data transfer apparatus according to claim 1 , wherein another primitive is transmitted toward the serial data transfer apparatus after the first period.3. The serial data transfer apparatus according to claim 2 , wherein the idle data transmitted toward the serial data transfer apparatus are transmitted therefrom toward the destination apparatus after the another primitive is transmitted toward the serial data transfer ...

Sealing Device

A sealing device () having: a slide ring () and a back ring (). The sealing device () is configured to seal an annular gap between a housing having a shaft hole, and a shaft inserted through the shaft hole. The slide ring () has: a through-cut (), comprising a circumferential cut (A), and axial cuts (B) extending from both ends of the circumferential cut, along the axial direction; and multiple parting lines (A, B) formed on a surface of the slide ring (). The parting lines (A, B) are arranged so that the parting lines (A, B) are not overlapped with the circumferential cut (A) exposed at the junction surface of the slide ring () with the back ring (), throughout the lengthwise direction of the circumferential cut. 1. A sealing device having: a slide ring made of a resin; and a back ring made of an elastic body joined to an inner peripheral surface or outer peripheral surface of the slide ring as a junction surface; the sealing device being configured to seal an annular gap between a housing having a shaft hole , and a shaft inserted through the shaft hole in a manner to conduct a movement relative to the housing;wherein the slide ring has: a through-cut in a step cut shape, comprising a single circumferential cut extending along a circumferential direction of the slide ring, and two axial cuts extending from both ends of the circumferential cut in mutually opposite directions, respectively, along the axial direction of the slide ring; and multiple parting lines formed on a surface of the slide ring along the circumferential direction of the slide ring, where the parting lines have been formed by injection molding the slide ring by a mold dividable into multiple partial molds at multiple junction of molds along the circumferential direction of the mold, and by subsequently parting the mold at the junction of molds; andwherein the parting lines are arranged so that the parting lines are not overlapped with the circumferential cut exposed at the junction surface of the ...

SERIAL DATA TRANSFER APPARATUS

A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption. 1. A serial data transfer apparatus comprising:a receiver coupled to a serial bus on which an idle data is transmitted from a destination apparatus which communicates with the serial data transfer apparatus toward the serial data transfer apparatus;a data storage unit coupled to the receiver to store the idle data received therefrom; anda transmitter coupled to the data storage unit and a serial bus to output the idle data read from the data storage unit onto the serial bus toward the destination apparatus.2. The serial data transfer apparatus according to claim 1 , wherein the data storage unit stores another idle data transmitted after the idle data.3. The serial data transfer apparatus according to claim 2 , wherein the transmitter outputs the another idle data read from the data storage unit onto the serial bus.4. The serial data transfer apparatus according to claim 1 , further comprising:a selector coupled to the data storage unit, a transmission process block; and the transmitter.5. The serial data transfer apparatus according to claim 4 , further comprising a control block coupled to the transmission process block claim 4 , the data storage unit claim 4 , and the selector to stop ...

Sealing Device

A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device () is fitted in an annular groove formed in either of two elements that are a housing having a shaft hole and a shaft inserted through the shaft hole, and the sealing device () seals an annular gap between the two elements. The sealing device () has a seal ring () sliding against the other element by relative axial movements of the two elements. In the seal ring (), on each of axially opposite ends of a sliding surface () sliding against the other element, there are formed grooves () extending from an end surface () of the seal ring () toward the axial center of a sliding surface (). 1. A sealing device mounted in an annular groove formed in one of two members that are a housing having a shaft hole and a shaft inserted into the shaft hole to seal an annular gap between the two members , the device comprising a seal ring for sliding against the other member due to relative axial movements of the two members;wherein the seal ring includes, on each of axial opposite end portions of a sliding surface sliding against the other member, a plurality of grooves extending from an end face of the seal ring toward an axial center of the sliding surface;a boundary between the grooves and the sliding surface is formed only of lines inclined with respect to a sliding direction of the sliding surface;the plurality of grooves are arranged to be adjacent to each other in a circumferential direction so that an area in which the boundary is formed of the inclined lines continues along an entire circumference of the sliding surface; andwherein the grooves are wedge-shaped grooves and provided continuously along the entire circumference of the sliding surface without intervals therebetween.2. The sealing device according to claim 1 , wherein an axial width of the sliding surface does not change along the entire circumference. This application is a ...

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME

A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. 1. A method of manufacturing a semiconductor device , comprising the steps of:(a) providing a wiring substrate including a main surface, a plurality of wirings formed on the main surface, a plurality of first electrodes formed on the main surface, a back surface opposite to the main surface, and a plurality of second electrodes formed on the back surface;(b) disposing a first adhesive material on the main surface of the wiring substrate;(c) after the step (b), mounting a first semiconductor chip over the main surface of the wiring substrate via the first adhesive material such that a first rear surface of the first semiconductor chip faces the main surface of the wiring substrate, and such that the wirings formed on the main surface of the wiring substrate are overlapped with the first semiconductor chip via the first adhesive material, and whereby a part of the first adhesive material is overflowed from a first side surface of the first semiconductor chip in a cross-sectional view, and whereby a part of the first side surface of the first semiconductor chip is covered with the part of the first adhesive material, the first ...

TURBOCHARGER SYSTEM

A turbocharger system includes: a high-pressure stage turbocharger including a high-pressure stage turbine disposed on an exhaust passage and driven by exhaust, and a high-pressure stage compressor disposed on an intake passage and driven by a rotational torque of the high-pressure stage turbine; and a low-pressure stage turbocharger including a low-pressure stage turbine disposed on the exhaust passage of a more downstream side than the high-pressure stage turbine and driven by exhaust, and a low-pressure stage compressor disposed on the intake passage of a more upstream side than the high-pressure stage compressor and driven by a rotational torque of the low-pressure stage turbine, wherein the high-pressure stage turbocharger includes an electric motor that assists a drive force of the high-pressure stage compressor. 1. A turbocharger system comprising:a high-pressure stage turbocharger including a high-pressure stage turbine disposed on an exhaust passage and driven by exhaust, and a high-pressure stage compressor disposed on an intake passage and driven by a rotational torque of the high-pressure stage turbine; anda low-pressure stage turbocharger including a low-pressure stage turbine disposed on the exhaust passage of a more downstream side than the high-pressure stage turbine and driven by exhaust, and a low-pressure stage compressor disposed on the intake passage of a more upstream side than the high-pressure stage compressor and driven by a rotational torque of the low-pressure stage turbine,wherein the high-pressure stage turbocharger includes a power-assisted turbocharger including an electric motor that assists a drive force of the high-pressure stage compressor.2. The turbocharger system according to claim 1 , comprising an electric motor control unit that drives the electric motor when a boost pressure claim 1 , which is an outlet pressure of the high-pressure stage compressor claim 1 , is smaller than a target boost pressure claim 1 , which is ...

ENGINE SYSTEM

An engine system for ensuring a sufficient boost pressure during engine braking and improving a braking force of a compression release brake. The system includes: a compression release brake device that operates a compression release brake to obtain a braking force during engine braking by forcibly opening an exhaust valve and releasing a compressive pressure near a compression top dead center of an engine; a power-assisted turbocharger including a turbine disposed on an exhaust passage of the engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the compressor release brake is operated. 13-. (canceled)4. An engine system comprising:a compression release brake device that operates a compression release brake to obtain a braking force during engine braking by forcibly opening an exhaust valve and releasing a compressive pressure near a compression top dead center of an engine;a power-assisted turbocharger including a turbine disposed on an exhaust passage of the engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; andan electric motor control unit that drives the electric motor when the compressor release brake is operated.5. The engine system according to claim 4 , wherein the electric motor control unit is configured to drive the electric motor when the compression release brake is operated and a variation of an accelerator opening degree in an accelerator return direction is greater than a preset threshold value.6. The engine system according to claim 4 , wherein the electric motor control unit is configured to drive the electric motor at a rotational speed corresponding to a variation of an accelerator opening degree in an ...

ENGINE SYSTEM

An engine system capable of immediately restarting an engine upon detecting a driver's reaccelerating operation while an engine speed is decreased by idle-stop control. The system includes an idle-stop control unit which performs the idle-stop control of stopping fuel injection to the engine when the engine idly rotates upon stopping the vehicle by connecting an electric assist turbocharger obtained by the combination of a turbocharger and a motor to an intake and exhaust system of the engine. The idle-stop control unit is configured to restart the engine by resuming the fuel injection to the engine while operating a motor upon detecting the reaccelerating operation during the idle-stop control. 15-. (canceled)6. An engine system comprising:an idle-stop control unit which performs idle-stop control of stopping a fuel injection to an engine in an engine idling state upon stopping a vehicle by connecting an electric assist turbocharger obtained by a combination of a motor and a turbocharger to an intake and exhaust system of the engine,wherein the idle-stop control unit restarts the engine by resuming the fuel injection to the engine while operating the motor upon detecting a reaccelerating operation during the idle-stop control.7. The engine system according to claim 6 ,wherein the idle-stop control unit detects an engine speed during the idle-stop control and restarts the engine by resuming the fuel injection to the engine while operating the motor when the engine speed upon detecting the reaccelerating operation during the idle-stop control is equal to or higher than a speed at which the engine is able to continue a combustion cycle during the operation of the motor.8. The engine system according to claim 7 ,wherein the idle-stop control unit restarts the engine by resuming the fuel injection to the engine while operating a starter included in the engine and the motor after the engine is completely stopped when the engine speed upon detecting the reaccelerating ...

TURBOCHARGER SYSTEM

A turbocharger system for achieving both improvement of fuel efficiency by engine downsizing and excellent shock loading resistance. The system includes: a power-assisted turbocharger mounted on a vehicle having an accessory and including a turbine disposed on an exhaust passage of an engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the accessory is being driven. 16-. (canceled)7. A turbocharger system comprising:a power-assisted turbocharger mounted on a vehicle having an accessory and including a turbine disposed on an exhaust passage of an engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; andan electric motor control unit that drives the electric motor when the accessory is being driven.8. The turbocharger system according to claim 7 , wherein the electric motor control unit drives the electric motor when a switch configured to drive the accessory is on.9. The turbocharger system according to claim 7 , wherein the electric motor control unit drives the electric motor when an operating unit configured to operate the accessory is on.10. The turbocharger system according to claim 7 , wherein the electric motor control unit drives the electric motor at a rotational speed corresponding to an engine speed.11. The turbocharger system according to claim 8 , wherein the electric motor control unit drives the electric motor at a rotational speed corresponding to an engine speed.12. The turbocharger system according to claim 9 , wherein the electric motor control unit drives the electric motor at a rotational speed corresponding to an engine speed. The present invention relates to a turbocharger system applied to vehicles in ...

SEALING SYSTEM

A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal () and a second dust seal () which is arranged at a location nearer to an atmospheric air side than the first dust seal (), wherein each of the first dust seal () and the second dust seal () has a seal lip formed so as to be slidable with respect to an outer peripheral surface of the shaft. The first dust seal () has seal lips () made of urethane rubber, and the second dust seal () has only a single seal lip () which is made of a rubber higher in flexibility than urethane rubber, and which extends toward the atmospheric air side. 1a main seal that prevents fluid to be sealed from leaking to an atmospheric air side; anda dust seal that is arranged at a location nearer to the atmospheric air side than said main seal, for preventing dust from invading to a side of the fluid to be sealed;wherein said dust seal is composed of a first dust seal and a second dust seal which is arranged at a location nearer to the atmospheric air side than said first dust seal, and each of said first dust seal and said second dust seal has an axially extending seal lip extending toward said atmospheric air side and formed so as to be slidable with respect to the outer peripheral surface of said shaft;the seal lip of said first dust seal is made of urethane rubber; andthe seal lip of said second dust seal is made of a rubber which is higher in flexibility than said urethane rubber, and is composed of only a seal lip that extents toward the atmospheric air side.. A sealing system which serves to seal an annular gap between an inner peripheral surface of a shaft hole formed in a housing and an outer peripheral surface of a shaft which is inserted through said shaft hole and carries out a reciprocating movement relative to said housing, said system comprising: This application is a continuation of U.S. patent application Ser. No. 13/004,055 filed on Jan. 11, 2011. ...

OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL

An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. 14-. (canceled)5. A transparent conducting film comprising: a crystalline transparent conducting film formed by electron beam deposition , ion plating , or high-density plasma-assist evaporation , using an oxide evaporation material comprising a sintered body containing: indium oxide as a main component thereof; and cerium , the oxide evaporation material having a cerium content of 0.001 to 0.110 in a Ce/In atomic ratio and an L* value of 62 to 95 in a CIE 1976 color space , whereinthe cerium content is 0.001 to 0.110 in the Ce/In atomic ratio.6. A transparent conducting film comprising: a crystalline transparent conducting film formed by electron beam deposition , ion plating , or high-density plasma-assist evaporation , using an oxide evaporation material comprising a sintered body containing: indium oxide as a main component thereof; and cerium , the oxide evaporation material having a cerium content of 0.004 to 0.051 in a Ce/In atomic ratio and an L* value of 62 to 95 in a CIE 1976 color space , whereinthe cerium content is 0.004 to 0.051 in the Ce/In atomic ratio, and{'sup': '4', 'a specific resistance of the ...

CAPACITIVE TOUCH PANEL, MANUFACTURING METHOD THEREFOR AND LIQUID CRYSTAL DISPLAY APPARATUS PROVIDED WITH THE TOUCH PANEL

A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like. 110-. (canceled)11. A method for producing a capacitive touch panel having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate , and a member for position detection comprising at least the wiring portion for position detection along with the electrodes for position detection is arranged at said substrate frame portion ,characterized in that after forming an amorphous transparent conductive film comprising an oxide having indium oxide as a main component and containing gallium and tin onto said transparent substrate, and before the formation process of the member for position detection, said transparent conductive film is subjected to heat treatment in a temperature range with crystallization temperature, as the lower limit, and with temperature higher by 100° C. than the crystallization temperature, as the upper limit, under atmosphere where oxygen is present or in air.12. The method for producing the capacitive touch panel according to claim 11 , characterized in that said amorphous transparent conductive film is formed onto the ...

VIBRATION TRANSFER STRUCTURE AND PIEZOELECTRIC SPEAKER

A vibration transfer structure () and a piezoelectric speaker () capable of achieving excellent vibration characteristics even when a piezoelectric device () is used. A vibration transfer structure () according to an aspect of the present disclosure includes a plate-like piezoelectric device () supported at both ends thereof, a diaphragm () disposed to be opposed to the piezoelectric device (), a plurality of spacers () configured to connect the piezoelectric device () with the diaphragm (), and an elastic body () disposed on a periphery () of the diaphragm (). 1. A vibration transfer structure comprising:a plate-like piezoelectric device supported at both ends thereof;a diaphragm disposed to be opposed to the piezoelectric device;a plurality of spacers configured to connect the diaphragm with the piezoelectric device; andan elastic body disposed on a periphery of the diaphragm.2. A vibration transfer structure comprising:a plate-like piezoelectric device supported at both ends thereof;an elastic body disposed to be opposed to the piezoelectric device;a diaphragm disposed on a surface of the elastic body opposite to a side on which the piezoelectric device is located; anda plurality of spacers disposed between the piezoelectric device and the elastic body, the plurality of spacers being adapted to transfer a vibration between the piezoelectric device and the elastic body.3. The vibration transfer structure according to claim 1 , wherein the plurality of spacers are disposed in places that are deviated from a center of the piezoelectric device.4. The vibration transfer structure according to claim 1 , wherein the plurality of spacers comprise:a first spacer disposed between a center of the piezoelectric device and one of the supported ends of the piezoelectric device; anda second spacer disposed between the center of the piezoelectric device and the other supported end of the piezoelectric device.5. The vibration transfer structure according to claim 1 , wherein the ...

PIEZOELECTRIC SPEAKER

A piezoelectric speaker (, . . . , or ) includes a piezoelectric element (), and a metal vibration part (, . . . , or ) to which the piezoelectric element () is made to adhere through an adhesive part (). The piezoelectric element () is a substantially rectangular plate. The metal vibration part (, . . . , or ) includes a substantially rectangular plate-shaped part (, or the like) vibrated by the piezoelectric element. A frequency of a natural vibration mode of the piezoelectric element () and a frequency of a natural vibration mode of the metal vibration part (, or the like) are set to be different from each other. 1. A piezoelectric speaker comprising:a piezoelectric element; anda metal vibration part to which the piezoelectric element is made to adhere through an adhesive part, whereinthe piezoelectric element is a substantially rectangular plate,the metal vibration part includes a substantially rectangular plate-shaped part that is vibrated by the piezoelectric element, anda frequency of a natural vibration mode of the piezoelectric element and a frequency of a natural vibration mode of the metal vibration part are set to be different from each other.2. The piezoelectric speaker according to claim 1 , wherein a relation between an area Ap of the piezoelectric element and an area Am of the rectangular plate-shaped part of the metal vibration part satisfies 1.1≦Am/Ap≦10.3. The piezoelectric speaker according to claim 1 , wherein the adhesive part is an elastic body.4. The piezoelectric speaker according to claim 3 , wherein a mechanical quality factor Qm of a vibrating body in which the piezoelectric element and the adhesive part are integrated with each other satisfies Qm≦5.0.5. The piezoelectric speaker according to claim 1 , further comprising a case at which the metal vibration part is provided claim 1 , the case including a sound emitting hole claim 1 ,wherein the sound emitting hole has a horn shape.6. The piezoelectric speaker according to claim 1 , wherein ...

Sliding Member and Process for Producing the Same

A sliding member comprising a polyamide resin and 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers, and having fine dents formed in a sliding surface thereof by dimpling using a laser; and a process for producing a sliding member comprising adding 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers to a polyamide resin, and forming fine dents in a sliding surface of the sliding member by dimpling using a laser.

Light-transmitting substrate, display device, signal device, and illumination device

A thin light-transmitting substrate showing high thermal conduction efficiency, and having a function of raising surface temperature thereof is provided. The light-transmitting substrate of the present invention comprises a substrate that transmits at least a light of a predetermined wavelength, and a conductor pattern that is disposed on the substrate, and generates heat to raise temperature of the surface of the substrate when it is supplied with an electric current. The conductor pattern is directly disposed on the substrate without any adhesive layer.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. 1. A method of manufacturing a semiconductor device , comprising the steps of: a substrate comprised of an monocrystalline silicon,', 'a multiple layer formed on a main surface of the substrate, the multiple layer having a wiring comprised of a first metal, a first insulating film comprised of SiO (silicon oxide), and a second insulating film having a dielectric constant lower than a dielectric constant of the first insulating film,', 'a first pad comprised of a second metal, and formed on a front surface of the multiple layer, the first pad being arranged in a first region, which is to be obtained as a first semiconductor chip, in the front surface of the multiple layer in plan view,', 'a second pad comprised of the second metal, and formed on the front surface of the multiple layer, the second pad being arranged in a second region, which is to be obtained as a second semiconductor chip, in the front surface of the multiple layer in plan view, and', 'a third pad comprised of the second metal, and formed on the front surface of the multiple layer, the third pad being arranged in a third region, which is to be removed by using a dicing saw, in the front surface of the multiple layer in plan view, the third region being located between the first region and the second region in plan view;, '(a) providing a semiconductor wafer having(b) after the step (a), irradiating both sides of the third pad of the semiconductor wafer with a laser beam so as not to contact with the first, second and third pads, thereby forming ...

MULTILAYER CERAMIC CAPACITOR

A multilayer ceramic capacitor includes a multilayer body including dielectric layers and internal electrode layers alternately laminated therein, first and second main surfaces opposing each other in a lamination direction, first and second end surfaces opposing each other in a length direction which intersects the lamination direction, and first and second side surfaces opposing each other in a width direction which intersects the lamination direction and the length direction, and external electrodes on the first and second end surfaces, and each electrically connected to the internal electrode layers, wherein the multilayer body includes a slit in at least one of the first side surface, the second side surface, and the second main surface defining and functioning as a board-mounting surface. 1. A multilayer ceramic capacitor comprising:a multilayer body including a plurality of dielectric layers and a plurality of internal electrode layers alternately laminated therein, a first main surface and a second main surface opposing each other in a lamination direction, a first end surface and a second end surface opposing each other in a length direction which intersects the lamination direction, and a first side surface and a second side surface opposing each other in a width direction which intersects the lamination direction and the length direction; andexternal electrodes respectively on the first end surface and the second end surface of the multilayer body, and each electrically connected to the internal electrode layers; whereinthe multilayer body includes a slit in at least one of the first side surface, the second side surface, and the second main surface defining and functioning as a board-mounting surface.2. The multilayer ceramic capacitor according to claim 1 , wherein the slit extends over entire dimensions or substantially entire dimensions in the lamination direction of the first side surface and the second side surface.3. The multilayer ceramic ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE

Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. 1. A method of manufacturing a semiconductor device , comprising:a groove forming step of forming grooves on respective front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips, such that the grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line;an arranging step of arranging the first and second semiconductor wafers so that the front surfaces thereof are opposed to each other after the groove forming step;a sealing step of sealing a space between the first semiconductor wafer and the second semiconductor wafer with underfill;a polishing step of polishing respective rear surfaces of the first and second semiconductor wafers until at least the grooves are exposed after the arranging step and the sealing step; anda dicing step of cutting a structure including the first and second semiconductor wafers and the underfill on the dicing line after the polishing step.2. The method of manufacturing a semiconductor device according to claim 1 , whereina depth of the grooves is set to a value obtained by adding 20 μm to a thickness of the first and second semiconductor wafers after the polishing step.3. ...

PIEZOELECTRIC ELEMENT, PIEZOELECTRIC VIBRATION MODULE, AND METHODS OF MANUFACTURING THE SAME

A piezoelectric vibration module includes a piezoelectric element, a wiring member connected to the piezoelectric element and drawn out to the outside, and an elastic plate bonded to one surface of the piezoelectric element, wherein the elastic plate is made of a silicone rubber. 1. A piezoelectric vibration module comprising a piezoelectric element , a wiring member connected to the piezoelectric element and drawn out to the outside , and an elastic plate attached to one surface of the piezoelectric element , wherein the elastic plate is made of a silicone rubber.2. The piezoelectric vibration module according to claim 1 , further comprising a housing member provided so as to cover claim 1 , jointly with the elastic plate claim 1 , the piezoelectric element and a connecting portion claim 1 , with the piezoelectric element claim 1 , of the wiring member claim 1 , wherein the housing member is made of the same silicone rubber as the elastic plate.3. The piezoelectric vibration module according to claim 1 , having an electrode lead-out portion on the other surface claim 1 , facing the one surface claim 1 , of the piezoelectric element claim 1 , wherein the wiring member is a flexible wiring board conductively connected to the electrode lead-out portion.4. The piezoelectric vibration module according to claim 1 , wherein the silicone rubber has a hardness of 30 to 130.5. The piezoelectric vibration module according to claim 1 , wherein the elastic plate and the piezoelectric element are bonded to each other through a cold-setting silicone adhesive.6. The piezoelectric vibration module according to claim 1 ,wherein the piezoelectric element comprises a laminate in which piezoelectric body layers and electrode layers are alternately laminated, and a first and a second side electrode provided on both end faces or both side surfaces in a second direction crossing a first direction being a lamination direction of the laminate,wherein each electrode layer comprises a first ...

Semiconductor device manufacturing method and semiconductor device

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

TRANSPARENT CONDUCTIVE OXIDE FILM, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT

Provided is a photoelectric conversion element comprising ITiO as a transparent electrode that is formed using an inline-type sputtering method, and utilizing the high transmittance up to the near-infrared ray region and excellent conductivity of ITiO. Using the inline-type sputtering method, a first transparent conductive oxide film comprising indium oxide or tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less is formed on a photoelectric conversion layer side, and a second transparent conductive oxide film comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic % is laminated on an opposite side of the first transparent conductive film from the photoelectric conversion layer 1. A transparent conductive oxide film that is used as a transparent electrode in a photoelectric conversion element that comprises at least a photoelectric conversion layer and the transparent electrode;the transparent conductive oxide film comprising a layered film that includes:a first transparent conductive oxide film comprising an indium oxide or a tin-containing indium oxide that includes indium oxide as a main component and tin at an atomic ratio Sn/(In+Sn) of 19 atomic % or less, and formed on a photoelectric conversion layer side; anda second transparent conductive oxide film comprising a titanium-containing indium oxide that includes indium oxide as a main component, and titanium at an atomic ratio Ti/(In+Ti) of 0.5 atomic % to 3.5 atomic %, is layered on an opposite side of the first transparent conductive oxide film from the photoelectric conversion layer.2. The transparent conductive oxide film according to claim 1 , wherein the film thickness of the first transparent conductive oxide film is within the range 3 nm to 60 nm claim 1 , and the film thickness of the overall layered film is ...

OXIDE SINTERED BODY, PRODUCTION METHOD THEREFOR, TARGET, AND TRANSPARENT CONDUCTIVE FILM

A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), and the content of cerium is equal to or lower than 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an InOphase of a bixbyite structure has a CeOphase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm. 1. A oxide sintered body comprising an indium oxide and a cerium oxide , wherein the cerium content is 0.3 to 9% by atom , as an atomicity ratio of Ce/(In+Ce) , and the content of cerium is equal to or lower than 9% by atom , as an atomicity ratio of Ce/(In+Ce) ,{'sub': 2', '3', '2, 'said oxide sintered body has an InOphase of a bixbyite structure as a main crystal phase, has a CeOphase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase.'}2. The oxide sintered body according to claim 1 , characterized in that X-ray diffraction peak intensity ratio (I) claim 1 , defined by the following formula claim 1 , is equal to or lower than 25%:{'br': None, 'sub': 2', '2', '3, 'I=[CeOphase(111)/InOphase(222)]×100[%]'}3. The oxide sintered body according to claim 1 , wherein the oxide sintered body does not comprise tin.4. A production method for a oxide sintered body obtained by adding and mixing raw material powder comprising indium oxide powder and cerium oxide powder claim 1 , and then molding the mixed powder claim 1 , and sintering the molding by a normal pressure sintering method claim 1 , or molding and sintering the mixed powder by a hot press method claim 1 ,{'sub': 2', '2', '2, 'wherein average ...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. 1. A semiconductor chip , comprising:a substrate including a main surface, and a back surface opposite to the main surface;a first pad formed in a layer over the main surface of the substrate;a conductor portion formed in the layer, and spaced apart from the first pad; anda protective film formed over the main surface of the substrate such that the protective film exposes the first pad, and such that the protective film covers the conductor portion,wherein the conductor portion is formed along each edge of the main surface of the substrate in plan view, andwherein the first pad is arranged at an outermost portion of the main surface.2. The semiconductor chip according to claim 1 ,wherein an interlayer insulating film is arranged between the substrate and the layer,wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film,wherein the substrate is comprised of silicon, andwherein dielectric constant of the low-dielectric constant film is lower than that of the substrate.3. The semiconductor chip according to claim 1 ,wherein an interlayer insulating film is arranged between the substrate and the layer,wherein the interlayer insulating film has a wiring layer and a low-dielectric constant film,wherein the substrate is comprised of silicon; andwherein the low-dielectric constant film is more brittle than the substrate.4. The semiconductor chip according to claim 1 ,wherein a second pad is formed in the layer, and spaced apart from the first pad and the conductor portion, ...

Device generating sound

In the present invention, a device is provided with a main surface member, a piezoelectric body plate, a first support part, and a housing. The main surface member is used as a vibration plate. The piezoelectric body plate vibrates according to an electric signal. The first support part supports the piezoelectric body plate. The housing has a second support part that supports the main surface member and extends in a prescribed direction that intersects the main surface member. The first support part is secured to the second support so that the second support part vibrates in the prescribed direction according to the vibration of the piezoelectric body plate. The vibration of the piezoelectric body plate is transmitted to the main surface member via the first support part and the second support part, and due to this the main surface member vibrates to generate a sound.

SOUND GENERATING UNIT AND ELECTRONIC DEVICE

An electronic device is provided with a main surface member which is used as a vibrating plate, a case which supports the main surface member and a sound generating unit which is attached to the case to generate sound by vibrating the main surface member. The sound generating unit is provided with a piezoelectric plate and a protective member. The piezoelectric plate has a longitudinal direction in a first horizontal direction and has an upper surface, a lower surface and a plurality of side surfaces. The protective member has a supporting portion covering the lower surface of the piezoelectric plate and supporting the piezoelectric plate, a protective portion provided to the supporting portion to cover at least one of the side surfaces of the piezoelectric plate and an attached portion attached to the case. 1. A sound generating unit which is used in an electronic device provided with a main surface member used as a vibrating plate and a case supporting the main surface member , the sound generating unit which is attached to either the main surface member or the case to generate sound by vibrating the main surface member , wherein:the sound generating unit comprises a piezoelectric plate and a protective member;the piezoelectric plate has a longitudinal direction in a first horizontal direction and has an upper surface, a lower surface and a plurality of side surfaces;the protective member has a supporting portion which covers the lower surface of the piezoelectric plate and which supports the piezoelectric plate, a protective portion which covers at least one of the side surfaces and an attached portion which is attached to either the main surface member or the case.2. The sound generating unit as recited in claim 1 , wherein the supporting portion and the protective portion are formed in a single body using identical material.3. The sound generating unit as recited in claim 2 , wherein:the supporting portion supports the lower surface of the piezoelectric plate; ...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. 1. A semiconductor device comprising a wiring board and a semiconductor chip mounted on the wiring board ,wherein the semiconductor chip has a region at own outer periphery where a test pad is arranged.2. The semiconductor device according to claim 1 ,wherein the semiconductor device has a structure in which a plurality of the semiconductor chips are stacked.3. The semiconductor device according to claim 1 ,wherein a wiring layer on a main surface of the semiconductor chip has a low-dielectric-constant film in a method of manufacturing the semiconductor device. This application is a divisional application of Ser. No. 15/378,420, filed Dec. 14, 2016, which is a continuation of U.S. patent application Ser. No. 14/699,660, filed Apr. 29, 2015, now abandoned, which is a continuation of U.S. patent application Ser. No. 14/285,943, filed May 23, 2014, now U.S. Pat. No. 9,070,560, which is a continuation of U.S. patent application Ser. No. 13/310,170, filed Dec. 2, 2011, now U.S. Pat. No. 8,772,135, which is a continuation of U.S. patent application Ser. No. 13/017,747, filed Jan. 31, 2011, now U.S. Pat. No. 8,084,334, which is a continuation of U.S. patent application Ser. No. 12/092,850, filed May 7, 2008, now U.S. Pat. No. 7,892,949, which is a 371 of PCT Application No. PCT/JP2006/322358, filed Nov. 9, 2006, which claims priority to PCT Application No. PCT/JP2005/020615, filed Nov. 10, 2005. The contents of these applications are hereby incorporated by reference into this application.The present invention relates ...

SPEAKER AND IMAGE DISPLAY APPARATUS

A piezoelectric speaker according to one aspect of the present disclosure includes: a plurality of piezoelectric elements; a plurality of diaphragms vibrated by expansion/contraction of the plurality of piezoelectric elements, the plurality of diaphragms each having a rectangular principal surface; and a cover that has a box shape and is arranged to cover one surface of the principal surface of each of the diaphragms, the cover being arranged so that an air chamber is formed between the cover and the one surface of the principal surface of each of the diaphragms, in which the lengths of the long sides of the principal surfaces of the plurality of diaphragms are different from one another, and the cover includes an opening formed on one of surfaces of the cover perpendicular to the principal surface of each of the diaphragms. 1. A speaker comprising:a plurality of diaphragms, each having a rectangular principal surface; and a cover that has a box shape and is arranged to cover one surface of the principal surface of each of the diaphragms, the cover being arranged so that an air chamber is formed between the cover and the one surface of the principal surface of each of the diaphragms, herein the cover includes an opening formed on one of surfaces of the cover perpendicular to the principal surface of each of the diaphragms.2. The speaker according to claim 1 , further comprising a plurality of piezoelectric elements claim 1 , wherein the plurality of diaphragms are vibrated by expansion/contraction of the plurality of piezoelectric elements.3. The speaker according to claim 2 , wherein the lengths of long sides of the principal surfaces of the plurality of diaphragms are different from one another.4. The speaker according to claim 3 , wherein the principal surfaces of the plurality of diaphragms are on one plane and the long sides of the principal surfaces of the plurality of diaphragms are aligned.5. The speaker according to claim 4 , wherein the opening is formed ...

Semiconductor device and imaging apparatus

【課題】 耐圧電圧の異なり、或いはノイズ耐性の異なる複数の半導体チップを重ねて搭載したマルチチップモジュールのような半導体装置における信号品質を向上させる。 【解決手段】 縁辺部に沿って複数個のボンディングパッドが配置されたパッケージ基板に重ねて搭載され、各々縁辺部に沿って複数個のボンディングパッドを有する第１の半導体チップ（３）と第２の半導体チップ（４）を有する。第１の半導体チップはアナログ信号用のボンディングパッドを複数個有し、第２の半導体チップは高電圧信号用のボンディングパッドを複数個有する。アナログ信号用のボンディングパッドが配置された縁辺部と前記高電圧信号用のボンディングパッドが配置された縁辺部とは相互にパッケージ基板の異なる縁辺部に沿う配置を有する。パッケージ基板上で高電圧信号とアナログ信号との電極や配線が隣り合うことを容易に回避でき、信号品質の劣化を抑制することができる。 【選択図】 図１

THIN FILM PROCESS AND APPARATUS FOR CARRYING OUT THE METHOD

Oxide sintered body

An oxide sintered body is composed mainly of indium and containing tungsten, has a resistivity of no more than 1 kΩcm. The tungsten content in terms of the W/In atomic ratio is preferably at least 0.001 and no more than 0.17. The oxide sintered body comprise mainly a bixbyite structure indium oxide crystal phase containing tungsten in a solid solution and/or an indium tungstate compound crystal phase, with no tungsten oxide crystal phase present, whereby an oxide sintered body for use as a sputtering target is provided, for an oxide based transparent conductive film with low resistance and excellent transmission characteristics for the infrared light region.

Separating method for frame

Oxide vapor deposition material and transparent conductive film

Sound generating device and electronic equipment

An electronic device 10 is provided with a main surface member 20 which is used as a vibrating plate, a case 30 which supports the main surface member 20 and a sound generating unit 50 which is attached to the case 30 to generate sound by vibrating the main surface member 20. The sound generating unit 50 is provided with a piezoelectric plate 60 and a protective member 90. The piezoelectric plate 60 has a longitudinal direction in a first horizontal direction and has an upper surface, a lower surface and a plurality of side surfaces. The protective member 90 has a supporting portion 92 covering the lower surface of the piezoelectric plate 60 and supporting the piezoelectric plate 60, a protective portion 93 provided to the supporting portion 92 to cover at least one of the side surfaces of the piezoelectric plate 60 and an attached portion 94 attached to the case 30.

Sealing device

A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device (1) is fitted in an annular groove formed in either of two elements that are a housing having a shaft hole and a shaft inserted through the shaft hole, and the sealing device (1) seals an annular gap between the two elements. The sealing device (1) has a seal ring (2) sliding against the other element by relative axial movements of the two elements. In the seal ring (2), on each of axially opposite ends of a sliding surface (20) sliding against the other element, there are formed grooves (22) extending from an end surface (21) of the seal ring (2) toward the axial center of a sliding surface (20). Further, in the seal ring (2), the boundary between each groove (22) and the sliding surface (20) is formed only by lines inclined relative to the direction of sliding of the sliding surface (20), and grooves (23) are circumferentially adjacently arranged in the seal ring (2) so that regions each having the boundary formed by the inclined lines are continuous along the entire circumference of the sliding surface (20).

Coating gun

【課題】塗装ガンのヘッドを小型化するとともに、霧化塗料を広く拡散可能にする。 【解決手段】本発明に係る塗装ガンは、塗料を放出する塗料放出口２２ｂと、塗料放出口２２ｂの周囲に形成されており、その塗料放出口２２ｂから放出された塗料を霧化するためのエアーを放出する霧化エアー吹き出し口３２ｂと、霧化エアー吹き出し口３２ｂの周囲にほぼ等間隔で複数個形成されており、霧化された塗料の飛散方向に対して交差するようにエアーを放出するためのパターンエアー吹き出し口３４ｂとを有しており、各々のパターンエアー通路３４は直線状に形成されており、エアーの放出方向に延びる各々のパターンエアー通路３４の仮想軸線Ｊｐは、塗料放出口２２ｂを正面から見たときに、対応するパターンエアー吹き出し口の中心Ｃｆと塗料放出口の中心Ｃ０とをむすぶ仮想直線Ｌに対して同じ側に傾いており、その傾斜角が ０°より大きく、９０°より小さく設定されている。 【選択図】 図１

Sliding member and process for producing the same

Object: To provide a sliding member with a low friction coefficient in which, when fine dents are formed in a surface of the sliding member by dimpling using a laser, no hard raised portions are generated, and which does not damage a mating member; and to provide a process for producing the sliding member. Solution Means: A sliding member comprising a polyamide resin and 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers, and having fine dents formed in a sliding surface thereof by dimpling using a laser; and a process for producing a sliding member comprising adding 10 to 50 wt % of a fibrous filler selected from the group consisting of carbon fibers, aramid fibers, and whiskers to a polyamide resin, and forming fine dents in a sliding surface of the sliding member by dimpling using a laser.

Target for transparent conductive thin film, transparent conductive thin film and manufacturing method thereof, electrode material for display, organic electroluminescence element and solar cell

The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10 −4 Ω·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.

Oxide sintered body, oxide film obtained therefrom and transparent material containing it

The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at.% and less than 100 at.% with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Fabrication method of semiconductor circuit device

When a semiconductor wafer is formed to be thin, steps need to be taken to prevent warping of the wafer. For this purpose, a protective tape is affixed to a surface of the semiconductor wafer, and a back side of the semiconductor wafer is then ground to a predetermined thickness. A die bonding film is affixed to the back side of the semiconductor wafer, and a dicing tape is affixed on the die bonding film. The dicing tape that is affixed to the semiconductor wafer is held by a holding jig. The protective tape is peeled off from the wafer surface and the die bonding film is heated to improve the adherence between the semiconductor wafer and the die bonding film. The semiconductor wafer is subjected to dicing for separation into individual semiconductor chips. The semiconductor chips are then die-bonded in a predetermined number onto a wiring substrate to fabricate a semiconductor device.

Fabrication method of semiconductor integrated circuit device

Electrically-assisted turbocharger

【課題】電動機の鉄損を低減でき、且つ、電動機の停止時における無駄な仕事を無くした電動アシストターボチャージャを提供する。 【解決手段】ターボチャージャ１１と電動機１２とを減速ギア機構１３で連結して構成した電動アシストターボチャージャ１０であって、減速ギア機構１３は、ターボチャージャ１１のターボ軸１６に取り付けられたターボ側ギア１９と、電動機１２のロータ２０に取り付けられると共にターボ側ギア１９に連結され、且つ、ターボ側ギア１９よりも歯数が多い電動機側ギア２１とを有し、ターボ側ギア１９が、ワンウェイクラッチ２２を介してターボ軸に取り付けられたものである。 【選択図】図１

Fabrication method of semiconductor integrated circuit device

Semiconductor light emitting element, manufacturing method thereof, and lamp thereof

Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor

There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In 2 O 3 powder, WO 3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm 2 , and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m 3 furnace volume.

Rotary table in ultrasonic wire bonder

Oxide vapor deposition material, vapor deposition film and solar cell

Oxide sintered body, production method therefor, target, and transparent conductive film

Sintered body target for transparent conductive film fabrication, transparent conductive film fabricated by using the same, and transparent conductive base material comprising this conductive film formed thereon

A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a.beta.-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400) / .beta.-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45 % or less; and has a density of 5.8 g / cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Control device for internal combustion engine

【課題】電動機付きターボチャージャを有する内燃機関の制御装置に関し、エンジンの過渡応答性を向上させる。 【解決手段】排気通路に設けられたタービン２２及び吸気通路に設けられたコンプレッサ２１を有するターボチャージャ２０と、タービン２２及びコンプレッサ２１を回転させる電動機２４と、内燃機関１０の運転状態を検出する運転状態検出手段４２と、車両７０の要求加速度を算出する要求加速度算出手段６０と、車両７０の実加速度を検出する実加速度検出手段４３と、算出された要求加速度が検出された実加速度よりも大きい場合に電動機２４を駆動させる駆動制御手段６０とを備えた。 【選択図】図１

Sintered body target for transparent conductive film fabrication, transparent conductive film fabricated by using the same, and transparent conductive base material comprising this conductive film formed thereon

A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a.beta.-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400) / .beta.-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45 % or less; and has a density of 5.8 g / cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Automatic coating apparatus

Mounted on a wrist portion (10) of a single coating robot (6) is a common main assembly body (11) to which a plural number of bell-shape heads (42, 81, 83) are replaceably connectible. Further, a head changer (61) is provided within a working area of the coating robot (6), the head changer (61) being provided with head gripping mechanisms (63) to hold a plural number of bell-shape heads (42, 81, 83) thereon. By the use of the coating robot (6), one of the bell-shape heads (42, 81, 83) on the head changer (61) is replaceably connected to the common main assembly body (11) to form a complete sprayer (55, 101). Accordingly, the coating robot (6) can perform various coating operations by selectively picking up a suitable bell-shape head (42, 81, 83) from the head changer (61) and connecting same to the common main assembly body (11).

Seal ring and seal structure

The invention provides a seal ring and a seal structure which is excellent in a quality characteristic of maintaining a stable sealing performance over a long period of time without generating a cost increase. A protruding portion (5) protruding toward a groove bottom (73) is provided in an inner peripheral surface arranged so as to face to the groove bottom (73) of an annular groove (71), in a peripheral surface of a seal ring (1), and the seal ring (1) is installed to the annular groove (71) having the groove bottom (73) provided with a notch portion (74) corresponding to the protruding portion (5), thereby regulating a relative movement between a shaft (70) and the seal ring (1). Further, a leading end portion is formed in a taper shape in both of an axial direction and a peripheral direction in the protruding portion (5), whereby a seal performance is secured even in the case that a step is generated in the groove bottom (73) due to a long-term use.

Pick-up apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Oxide evaporation material and high-refractive-index transparent film

An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small.

Oxide evaporation material and high-refractive-index transparent film

An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small.

Manufacturing method for semiconductor light-emitting element

Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Oxide sinter, target, transparent conductive film obtained from the same, and transparent conductive base

　酸化亜鉛を主成分とし、さらにマグネシウムを含有する酸化物焼結体、それを加工したターゲット、これを用いて直流スパッタリング法やイオンプレーティング法によって得られる耐薬品性に優れた低抵抗の透明導電膜、並びに透明導電性基材を提供。 　酸化亜鉛と、マグネシウムとを含有し、かつ、マグネシウムの含有量が、Ｍｇ／（Ｚｎ＋Ｍｇ）原子数比として０．０２～０．３０である酸化物焼結体；さらに、ガリウムおよび／またはアルミニウムとを含有し、その含有量が、（Ｇａ＋Ａｌ）／（Ｚｎ＋Ｇａ＋Ａｌ）原子数比として０を超え０．０８以下、また、マグネシウムの含有量が、Ｍｇ／（Ｚｎ＋Ｇａ＋Ａｌ＋Ｍｇ）原子数比として０．０２～０．３０である酸化物焼結体；これら酸化物焼結体を加工して得られるターゲット；このターゲットを用いて、スパッタリング法あるいはイオンプレーティング法で基板上に形成される透明導電膜などにより提供。

Semiconductor device and a manufacturing method of the same

Ga-In-O amorphous oxide transparent conductive film, and transparent conductive base material comprising this conductive film formed thereon

A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO 3 phase and an In 2 O 3 phase; provides an In 2 O 3 phase (400)/β-GaInO 3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm 3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

THIN FILM PROCESS AND APPARATUS FOR CARRYING OUT THE METHOD

Procédé de production de pellicule mince prévu pour former une pellicule mince sur un substrat sous un champ à haute gravité. Une chambre de production de pellicule mince enferme le substrat et un matériau source correspondant au matériau à déposer sur le substrat et est mise en rotation pour produire un champ à haute gravité. Ensuite, par chauffage et par mise en évaporation du matériau source, une pellicule mince est déposée sur le substrat. A method of producing thin film intended to form a thin film on a substrate under a high gravity field. A thin film production chamber encloses the substrate and a source material corresponding to the material to be deposited on the substrate and is rotated to produce a high gravity field. Then, by heating and evaporating the source material, a thin film is deposited on the substrate.

Cartridge holder

Making method for semiconductor device and semiconductor device the same

Sealing system

A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal ( 100 ) and a second dust seal ( 200 ) which is arranged at a location nearer to an atmospheric air side than the first dust seal ( 100 ), wherein each of the first dust seal ( 100 ) and the second dust seal ( 200 ) has a seal lip formed so as to be slidable with respect to an outer peripheral surface of the shaft. The first dust seal ( 100 ) has seal lips ( 121, 122 ) made of urethane rubber, and the second dust seal ( 200 ) has only a single seal lip ( 221 ) which is made of a rubber higher in flexibility than urethane rubber, and which extends toward the atmospheric air side.

Dicing device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device

A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.

Oxide vapor deposition material and transparent conductive film

Method and device for collecting pellets and manufacture of semiconductor device

(57)【要約】 【課題】 ペレット採取工程における歩留りおよびペレ ット採取効率の向上を実現する。 【解決手段】 キャリア治具１に周辺部を固定された粘 着テープ２に貼付された半導体ウェハをダイシングして 形成されペレット３のペレット保持治具５による採取に 際して、突き上げ治具４の突き上げ高さを、採取対象の ペレット３の位置が、半導体ウェハ（すなわちキャリア 治具１）の中央部の場合と周辺部の場合とで変化させ る。具体的には、粘着テープ２の撓み量の大きな中央部 では突き上げ高さを大きく（Ｈ１）し、撓み量の小さい 周辺部では突き上げ高さを小さく（Ｈ２）して、ペレッ ト保持治具５によるペレット３の採取が確実に行われる ようにする。また、突き上げ治具４の当接端４ａを平坦 にして粘着テープ２を突き破らないようにし、ペレット ３の底面の損傷を防止する。

Oxide sinter, process for producing the same, target, and transparent conductive film and transparent conductive substrate both obtained from the target

A sputtering target or ion-plating tablet with which high-rate and nodule-less deposition can be realized; an oxide sinter optimal for obtaining the target or tablet; a process for producing the sinter; and a low-resistivity transparent conductive film obtained from the target or tablet and reduced in blue-light absorption. The oxide sinter comprises indium and gallium in the form of oxides, and is characterized in that it includes an In2O3 phase of a bixbite structure as the main crystal phase and that either a GaInO3 phase of a ß-Ga2O3 type structure or a combination of a GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed in the main crystal phase as crystal grains having an average grain diameter of 5 µm or smaller. The oxide sinter is further characterized by having a gallium content of 10-35 at.%, excluding 35 at.%, in terms of Ga/(In+Ga) atom number ratio.

Thermal storage unit

A thermal storage unit has a thermal storage material which performs heat exchange through a fluid filled in a thermal storage body arranged within a vessel having an opening communicated to outside. The thermal storage body is a porous ceramic molding which contains the thermal storage medium.

Vibration actuator

(57)【要約】 【課題】 振動機能とスピーカ機能を有するマルチモー ドデバイスにおいて、振動信号とスピーカ信号を同時に 与えられた場合でも双方の挙動に乱れなく発音および振 動を実現させることができる振動アクチュエータと、そ れを用いた携帯機器とを提供すること。 【解決手段】 磁気回路と、振動板１６に設けられたボ イスコイル１８とを備え、ローレンツ力によって、スピ ーカ音と、バイブレーションとを発生する振動アクチュ エータ１０において、前記スピーカ音と、バイブレーシ ョンとを発生するために入力される各々の信号を同時に 入力した際の挙動を安定させる為に、更に、磁気回路挙 動防止コイル１を備えている。

Gas barrier transparent resin substrate, method for manufacture thereof, and flexible display element using gas barrier transparent resin substrate

A gas barrier transparent resin substrate which is manufactured by forming a transparent oxide film comprising a tin oxide amorphous film or a tin oxide based amorphous film containing a tin oxide and at least one addition element selected from the group consisting of Si, Ge, Al, Ce and In in a proportion of 0.2 to 45 atomic % relative to the total amount of the addition element and Sn, as a gas barrier layer, on at least one surface of a resin film base material, to thereby prepare a gas barrier transparent resin substrate; a flexible display element using the above gas barrier transparent resin substrate. A silicon oxide film or a silicon nitride film may be formed on the transparent oxide film of the gas barrier transparent resin substrate, to thereby form a two-layer film. Further, a flexible display element can be manufactured from the gas barrier transparent resin substrate through providing a transparent electrode film thereon. The above gas barrier transparent resin substrate exhibits better surface smoothness, higher transparency, and higher steam barrier capability, as compared to a conventional one.

Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element

Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Hybrid vehicle and method of controlling the same

【課題】高速走行時における回生効率を向上でき、既存の車両からの転用が容易であり、安全性能を向上させることができるハイブリッド車両を提供する。【解決手段】ハイブリッド車両は、プロペラシャフト２５とモータージェネレーター３３の回転軸３２とを該モータージェネレーターの回転軸を入力軸とし、かつ該プロペラシャフトを出力軸とする減速機構３０を介して接続し、第２パワステポンプ４５を備え、制御装置８０は、第１パワステポンプが供給するパワステフルード４４の圧力が設定値より低下した場合に、モータージェネレーターとプロペラシャフトとが減速機構を介して接続した第１状態が解除されて、モータージェネレーターと第２パワステポンプとが減速機構を介して接続した第２状態に切り替えるように減速機構を制御するとともにモータージェネレーターを稼働させる。【選択図】図１

堆肥化管理装置及び堆肥化管理方法

【課題】堆肥の生産工程において、省力的かつ精度よく堆肥化の状態を測定し管理する堆肥化管理装置及び堆肥化管理方法の提供を目的とする。【解決手段】堆肥材料を収容する複数の発酵槽に対向して移動可能に支持された堆肥材料把持部の堆肥材料切り返し動作を制御する切り返し動作制御部と、堆肥材料切り返し動作時において堆肥材料把持部が把持している堆肥材料の堆肥化の状態を判定可能な情報である堆肥化情報を取得する堆肥化状態取得部と、発酵槽に収容されている堆肥材料の位置を仮想的に区分けした仮想ブロックごとに、堆肥材料切り返し動作時に計測された堆肥化情報を記憶部に記憶させる記憶管理部と、堆肥化情報に基づいて仮想ブロックごとに堆肥化の完了判定を行う堆肥化判定部と、を備える堆肥化管理装置による。【選択図】図１

Dichtungsring und dichtungsstruktur

Engine system

静電容量型再生針の製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Hydraulic cylinder

A hydraulic cylinder includes a cylinder having a shaft hole, a piston inserted into the shaft hole so as to have clearance with respect to an inner circumferential surface of the shaft hole, and seal members arranged in annular grooves formed in an inner circumference of the shaft hole to seal an annular gap between the inner circumference of the shaft hole and the piston, wherein in the hydraulic cylinder in which cavitation could occur in a portion of the clearance accompanying motion of the piston, an expansion part obtained by expanding a portion of a sidewall surface of the annular grooves on an inner circumferential edge side outward from an arrangement area of the seal members is provided to make a distance from a location where cavitation occurs to the seal members longer by a space formed by the expansion part.

音振動発生装置及び電子機器

【課題】シンプルな構造で、且つ、ターゲット周波数帯域における音圧周波数特性を要求にマッチさせることができる、音振動発生装置を提供する。 【解決手段】音振動発生装置１は、平板状の振動板１０と、圧電素子２０と、第１錘３０と、第１撓み抑止部６０とを有する。振動板１０は、長手方向の一端部を固定部５０によって固定され且つ他端部が自由端となっている。圧電素子２０は、振動板１０の固定部５０に近い第１領域に配設され、且つ、電力が供給されることにより駆動する。第１錘３０は、振動板１０において上記第１領域よりも固定部５０から遠い第２領域に圧電素子２０と隣接して配設されている。第１撓み抑止部６０は、上記長手方向において圧電素子２０と第１錘３０との間に位置する、振動板１０の第１変曲領域に配設されて、振動板１０の撓みを抑える。 【選択図】図１

電動アシストターボチャージャ

【課題】電動機の鉄損を低減でき、且つ、ターボ軸の振動を効果的に抑制し、ターボ軸の軸受けとして安価な転がり軸受けを用いることが可能な電動アシストターボチャージャを提供する。 【解決手段】ターボチャージャ１１と電動機１２とを減速ギア機構１３で連結して構成した電動アシストターボチャージャ１０であって、減速ギア機構１３は、ターボチャージャ１１のターボ軸１６に取り付けられたターボ側ギア１９と、電動機１２のロータ２０に取り付けられると共にターボ側ギア１９に連結され、且つ、ターボ側ギア１９よりも歯数が多い電動機側ギア２１とを有し、ターボ側ギア１９が、ターボ軸１６の振動の腹に取り付けられたものである。 【選択図】図３

半導体装置の製造方法

【課題】半導体装置の信頼性の向上を図る。 【解決手段】半導体ウエハ１Ｗの主面１Ｗａ側近傍の第１の破砕層１ｅ及び第２の破砕層１ｆに加えて、裏面側近傍にも第３の破砕層１ｇ及び第４の破砕層１ｈを形成したことにより、ブレーキング時に、前記裏面側近傍の第３の破砕層１ｇまたは第４の破砕層１ｈが起点となって割れるため、前記裏面における分割ラインの蛇行を無くすことができ、チッピングの発生を防止して半導体装置の信頼性の向上を図ることができる。さらに、半導体ウエハ１Ｗの前記裏面側近傍の第３の破砕層１ｇ及び第４の破砕層１ｈをダイシングラインの交差領域のみに形成することにより、半導体チップの抗折強度の低下を抑制しつつ、チッピングの発生を防止することができる。 【選択図】図１３

設計支援システム及び設計支援方法

【課題】設計における各過程及び各セクションでの情報の共有、授受、検証、変換などがスムーズに行え、またその情報を元に図面情報や積算情報、見積情報などに容易に展開する。 【解決手段】設計モデル（２１〜２３）から設計要求情報（２４）が作成及び更新される。設計要求情報（２４）とは、設計情報に、これを設計した各セクションにて当該セクションの優先資格情報を付加した情報であって、各セクションから要求されるものである。各セクションに設置されたクライアントは、ＬＡＮ等の電子通信回線を通じてサーバコンピュータと接続されている。各クライアントにて設計モデルが作成され又は更新されると、その設計モデル情報は自動的にサーバに送信されて設計要求情報ＤＢに情報を登録し又はその情報を更新するようになっている。また、設計要求情報ＤＢに情報が登録され又はその情報が更新されると、他のクライアントの設計モデルも自動的に登録され又はその情報が更新される。 【選択図】 図１