06-06-2013 дата публикации
Номер: US20130143162A1
A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a protective film-forming composition comprising a novolak resin of a bisphenol compound and a mixture of an alcohol solvent and an ether or aromatic solvent. 2. The protective film-forming composition of which is soluble in an alkaline developer.3. The protective film-forming composition of claim 1 , further comprising an organic solvent mixture of at least one alcohol solvent and at least one other solvent claim 1 ,the alcohol solvent being selected from the group consisting of 1-butyl alcohol, 2-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, tert-amyl alcohol, neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl-3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dimethyl-2-butanol, 2-ethyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-1-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclopentanol, and cyclohexanol,the other solvent being selected from an ether solvent selected from the group consisting of diisopropyl ether, diisobutyl ether, diisopentyl ether, di-n-pentyl ether, methyl cyclopentyl ether, methyl cyclohexyl ether, di-n-butyl ether, di-sec-butyl ether, diisopentyl ether, di-sec-pentyl ether, di-tert-amyl ether, and di-n-hexyl ether, and an aromatic solvent selected from the group consisting of toluene, xylene, mesitylene, ethylbenzene, propylbenzene, butylbenzene, tert-butylbenzene, and anisole.4. A lithography pattern forming process comprising the steps of forming a photoresist layer on a wafer claim 1 , forming a protective film thereon claim 1 , exposure claim 1 , and development claim 1 ,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the protective film being ...
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