ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ МАТЕРИАЛОВ ПОДЛОЖЕК ДЛЯ ЭЛЕКТРИЧЕСКИХ, МЕХАНИЧЕСКИХ И ОПТИЧЕСКИХ УСТРОЙСТВ

Изобретение направлено на водную полирующую композицию, которая особенно подходит для полирования материалов подложек для электрических, механических и оптических устройств. Композиция содержит (A) абразивные частицы, которые положительно заряжены, когда диспергированы в водной среде, имеющей pH в интервале от 3 до 9; (B) водорастворимые или диспергируемые в воде компоненты, выбранные из (b1) алифатических и циклоалифатических оксикарбоновых кислот, где молярное отношение гидроксильных групп к группам карбоновых кислот составляет по меньшей мере 2; (b2) сложных эфиров или лактонов оксикарбоновых кислот (b1), имеющих по меньшей мере две гидроксильные группы; и (b3) их смесей; и (C) водорастворимые или диспергируемые в воде полимерные компоненты, выбранные из (c1) линейных и разветвленных полимеров алкиленоксидов; (c2) линейных и разветвленных, алифатических и циклоалифатических поли(N-виниламидных) полимеров; и (c3) катионных полимерных флокулянтов, имеющих среднемассовую молекулярную массу ...

ПОЛИАММОНИЙ/ПОЛИСИЛОКСАНОВЫЕ СОПОЛИМЕРЫ

Изобретение относится к полиаммоний/полисилоксановым сополимерам, к способу их получения и их применению. Предложен полиаммоний/полисилоксановый сополимер, в котором боковые цепи основной полимерной цепи, содержащие четвертичные аммониевые группы, расположены с высокой плотностью. Предложен также мономер для получения указанного сополимера и способ получения сополимера на основе заявленного мономера. Технический результат - полученные сополимеры обладают повышенной способностью удерживаться на поверхности различных субстратов в присутствии композиций с высоким содержанием поверхностно-активных веществ для оказания требуемых воздействий на субстрат (размягчающего и гидрофилизующего действия). 3 н. и 23 з.п. ф-лы.

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК ДЛЯ ЭЛЕКТРИЧЕСКИХ, МЕХАНИЧЕСКИХ И ОПТИЧЕСКИХ УСТРОЙСТВ

Изобретение относится к водной полирующей композиции, имеющей pH от 3 до 11. Композиция содержит (А) по меньшей мере один тип абразивных частиц, которые положительно заряжены при диспергировании в водной среде, свободной от компонента (В) и имеющей pH в интервале от 3 до 9, что подтверждается электрофоретической подвижностью. Абразивные частицы (А) являются неорганическими частицами, содержащими или состоящими из диоксида церия. Композиция содержит (B) по меньшей мере один анионный фосфатный диспергирующий агент, выбранный из группы растворимых в воде конденсированных фосфатов, причем растворимый в воде конденсированный фосфат выбран из группы, состоящей из метафосфатов общей формулы I:и полифосфатов общей формулы II и III:где М является аммонием, натрием и калием и индекс n равен от 2 до 10000. Композиция содержит (C) по меньшей мере один компонент на основе многоатомного спирта, выбранный из группы (с1) многоатомных спиртов, причем многоатомный спирт (с1) содержится в количествах от 0,005 ...

ВОДНЫЕ ПОЛИРУЮЩИЕ КОМПОЗИЦИИ, СОДЕРЖАЩИЕ N-ЗАМЕЩЕННЫЕ ДИАЗЕНИЙ ДИОКСИДЫ И/ИЛИ СОЛИ N -ЗАМЕЩЕННЫХ N'-ГИДРОКСИ-ДИАЗЕНИЙ ОКСИДОВ

Изобретение относится к водным полирующим композициям для полирования материалов подложек электрических, высокой точности механических и оптических устройств. Водная полирующая композиция содержит (A) по меньшей мере одно растворимое в воде или диспергируемое в воде соединение, выбранное из солей N-замещенных N'-гидрокси-диазений-оксидов, и (В) абразивные частицы, содержащие оксид церия или состоящие из него. Описывается также способ полирования материалов до достижения желательной плоскостности с использованием указанной композиции. Предложенная полирующая композиция обеспечивает повышенную оксид/нитрид-селективность и улучшенную глобальную и локальную плоскостность отполированных материалов электрических, механических и оптических устройств. 3 н. и 6 з. п. ф-лы, 2 табл., 6 пр.

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА SiGeВ ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ

Изобретение относится к композиции для химико-механического полирования (ХМП) и к ее применению для полирования подложек для полупроводниковой промышленности. Способ изготовления полупроводниковых устройств включает химико-механическое полирование элементарного германия и/или материала SiGe, в котором 0,1≤x<1, в присутствии композиции для химико-механического полирования (ХМП), включающей: (A) неорганические частицы, органические частицы или их смесь или их композит, (B) по меньшей мере один тип окислительного реагента, (C) по меньшей мере один тип органического соединения, выбранного из группы, состоящей из альфа-аминокислоты или ее соли, органического соединения, включающего от двух до пяти карбоксигрупп (-СООН), или его соли, моно-, ди-, триалканоламина или его соли, простого аминоэфира, включающего дополнительную аминогруппу, гидроксигруппу, алкоксигруппу, карбоксильный фрагмент, или его соли, органического соединения, включающего от двух до четырех гидроксигрупп (-ОН), или его соли ...

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК, ИМЕЮЩИХ СТРУКТУРИРОВАННЫЕ ИЛИ НЕСТРУКТУРИРОВАННЫЕ ДИЭЛЕКТРИЧЕСКИЕ СЛОИ С НИЗКОЙ ДИЭЛЕКТРИЧЕСКОЙ ПОСТОЯННОЙ

Изобретение направлено на новую полирующую композицию, которая особенно хорошо подходит для полирования подложек, имеющих структурированные или неструктурированные диэлектрические слои с низкой или ультранизкой диэлектрической постоянной. Водная полирующая композиция содержит (A) абразивные частицы, выбранные из группы, состоящей из оксида кремния, оксида церия и их смесей, и (B) по меньшей мере одно амфифильное неионогенное поверхностно-активное вещество, выбранное из группы, состоящей из растворимых в воде или диспергируемых в воде поверхностно-активных веществ, имеющих (b1) гидрофобные группы, выбранные из группы, состоящей из разветвленных алкильных групп, имеющих 5-20 атомов углерода; и (b2) гидрофильные группы, выбранные из группы, состоящей из полиоксиалкиленовых групп, содержащих (b21) оксиэтиленовые мономерные звенья и (b22) замещенные оксиалкиленовые мономерные звенья, в которых заместители выбраны из группы, состоящей из алкильных, циклоалкильных или арильных, алкил-циклоалкильных ...

КОМПОЗИЦИЯ ДЛЯ СМР, СОДЕРЖАЩАЯ АБРАЗИВНЫЕ ЧАСТИЦЫ, СОДЕРЖАЩИЕ ДИОКСИД ЦЕРИЯ

Группа изобретений относится к полимерной химии и может быть использована в полупроводниковой промышленности. Композиция для химико-механической полировки содержит (А) абразивные частицы диоксида церия; (В) один или более полимеров. Каждая макромолекула полимеров содержит (i) одну или более анионных функциональных групп и (ii) одну или более структурных единиц -(AO)-R. А представляет собой CH, x = 2-4; а = 5-200. R представляет собой водород или разветвленную или линейную алкильную группу, имеющую от 1 до 4 атомов углерода. В полимере сумма молярных масс всех структурных единиц (ii) составляет по меньшей мере 50% от молярной массы указанного полимера (В). Для получения полупроводникового устройства осуществляют химико-механическую полировку подложки в присутствии композиции для химико-механической полировки. Полимер (В) применяют для подавления агломерации частиц, содержащих диоксид церия, и/или для установления дзета-потенциала частиц, содержащих диоксид церия. Обеспечиваются повышение ...

АБРАЗИВНОЕ ИЗДЕЛИЕ

Изобретение относится к изготовлению абразивных изделий. Оно включает множество абразивных частиц и смолу, сшитую политиольным соединением. Способ изготовления абразивного изделия включает контактирование множества абразивных частиц с отверждаемой композицией, которая включает смолу и политиольное соединение, и отверждение отверждаемой композиции с получением абразивного изделия. Способ шлифования рабочей поверхности включает приложение абразивного изделия к рабочей поверхности шлифующим движением для удаления части рабочей поверхности. Сшитая композиция включает формальдегидную смолу и политиольное соединение. Формальдегидная смола сшита политиольным соединением. Способ сшивания формальдегидной смолы включает взаимодействие политиольного сшивающего агента с формальдегидной смолой. Улучшаются свойства связующих для абразивов и изготовленных абразивных изделий. 7 н. и 64 з.п. ф-лы, 4 табл, 7 ил.

КОМПОЗИЦИИ, ВКЛЮЧАЮЩИЕ ПОЛУЧЕННЫЕ РЕАКЦИЕЙ ОБМЕНА НЕНАСЫЩЕННЫЕ ПОЛИОЛЬНЫЕ СЛОЖНЫЕ ЭФИРЫ

Изобретение относится к косметической области и касается композиции, включающей 50% вес. или менее подобного вазелину состава, представляющего собой полученный реакцией обмена ненасыщенный полиольный сложный эфир и/или частично или полностью гидрированный полученный реакцией обмена ненасыщенный полиольный сложный эфир, выбранный из группы, содержащей растительное масло, масло морских водорослей или животный жир, и имеющий йодное число 120 или менее, точку застывания от 37,8 до 60,0°С, коническое проникновение при 25°С от 100 до 300 dmm, точку плавления капли от 37,8 до 65,6°С, вязкость при 210°F приблизительно 100 SUS или менее. Изобретение также раскрывает эмульсию, дисперсная фаза которой представляет собой указанный полученный реакцией обмена ненасыщенный полиольный сложный эфир и/или частично или полностью гидрированный полученный реакцией обмена ненасыщенный полиольный сложный эфир, а также предмет личной гигиены, включающий указанную эмульсию. Изобретение обеспечивает подобные вазелину ...

СОСТАВЫ И СПОСОБЫ ДЛЯ ВОССТАНОВЛЕНИЯ ПЛАСТМАССОВЫХ КОЛПАКОВ И ЛИНЗ

Группа изобретений относится к комплектам принадлежностей и способам для восстановления свойств оптической прозрачности и светопропускания пластмассовой поверхности, поврежденной нанесением царапин и/или окислением, вызванным УФ излучением. Предложен комплект принадлежностей (вариант 1), включающий, по меньшей мере, один полировочный состав, имеющий полировочный абразив с зернистостью от 50 микрон до 400 микрон, диспергированный в жидком или гелеобразном носителе, по меньшей мере, один состав для глянцевания, имеющий абразив для глянцевания с зернистостью от 10 микрон до 60 микрон, диспергированный в жидком или гелеобразном носителе, и, по меньшей мере, один УФ защитный состав для нанесения на пластмассовую поверхность, обработанную полировочным составом и составом для глянцевания. Комплект принадлежностей (вариант 2) включает, по меньшей мере, один абразивный состав и, по меньшей мере, один УФ защитный состав, при этом абразивные частицы включают агломераты, разрушающиеся и изменяющиеся ...

КОМПОЗИЦИЯ ДЛЯ ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВКИ (СМР), СОДЕРЖАЩАЯ НЕИОННОЕ ПОВЕРХНОСТНО-АКТИВНОЕ ВЕЩЕСТВО И КАРБОНАТНУЮ СОЛЬ

Изобретение относится к композиции для химико-механической полировки (СМР). Композиция содержит (А) неорганические частицы, органические частицы или их смесь, или их композит, где частицы находятся в форме кокона, (В) амфифильное неионное поверхностно-активное вещество на основе полиоксиэтилен-полиоксипропиленового алкилового простого эфира в виде смеси молекул, содержащих в среднем алкильную группу, имеющую от 10 до 16 атомов углерода, от 5 до 20 оксиэтиленовых мономерных звеньев (b21) и от 2 до 8 оксипропиленовых мономерных звеньев (b22) в случайном распределении, (C) карбонатную или гидрокарбонатную соль, (D) спирт и (М) водную среду. Также описаны способ получения полупроводниковых устройств, включающий химико-механическую полировку подложки, применяемой в полупроводниковой промышленности, в присутствии СМР композиции и применение СМР композиции. 6 н. и 10 з.п. ф-лы, 4 ил., 2 табл., 2 пр.

ПРЕПАРАТ БЛАГОРОДНЫХ МЕТАЛЛОВ ИЛИ ГЛЯНЦЕВЫЙ ДЛЯ ПРЯМОЙ И НЕПРЯМОЙ ТРАФАРЕТНОЙ ПЕЧАТИ И ПЕРЕВОДНОЕ ИЗОБРАЖЕНИЕ, СОДЕРЖАЩЕЕ УКАЗАННЫЙ ПРЕПАРАТ

Описан препарат благородных металлов или глянцевый для украшения силикатных субстратов, таких как стекло, керамика, фарфор, китайская кость, содержащий, по меньшей мере, один полиаминоамид, при этом он дополнительно содержит одно или несколько веществ из группы, включающей: резинаты металлов, металлорганические соединения, природные смолы, искусственные смолы, смоляные масла, органические красители и наполнители, тиксотропные средства, растворители и пеногасители, при этом доля полиаминоамида в нем составляет от 3 до 50 вес.%. Также описано применение препарата благородных металлов или глянцевого для непрямой и прямой трафаретной печати на силикатных поверхностях, например на керамике, стекле или фарфоре, и переводное изображение на керамику, содержащее вышеописанный препарат. Технический результат - препарат является устойчивым к старению. 3 н. и 3 з.п. ф-лы.

СПОСОБ ОБРАБОТКИ КЕРАМИЧЕСКОЙ ПОДЛОЖКИ (ВАРИАНТЫ)

Изобретение относится к обработке керамических подложек, а более конкретно к полированию подложек. Описан способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, введенной между подложкой и обрабатывающим инструментом, причем суспензия содержит абразив и добавку, содержащую оксофосфорное или органофосфорное соединение в концентрации в диапазоне от 0,05 до 5 вес.% и перемещение подложки относительно обрабатывающего инструмента. Также описан способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, которая содержит абразив и добавку, содержащую оксофосфорное или органофосфорное соединение в концентрации в диапазоне от 0,05 до 5 вес.%, ввод в контакт подложки с обрабатывающим инструментом таким образом, что суспензия вводится между обрабатывающим инструментом и подложкой, и перемещение подложки или обрабатывающего инструмента таким образом, что подложка ...

Жидкая полировальная паста для обработки изделий на основе алюминия

Изобретение относится к механической обработке изделий на основе алюминия. Описана жидкая полировальная паста для обработки изделий на основе алюминия, включающая абразивный материал, триэтаноламин, стеариновую кислоту, жидкое натриевое стекло и воду, в которой в качестве абразивного материала используют отходы от полирования и шлифования оптических стекол при следующем соотношении компонентов, мас.%: отходы от полирования и шлифования оптических стекол - 30, стеариновая кислота - 7, жидкое натриевое стекло - 2, триэтаноламин - 2, вода - остальное. Технический результат: получена полировальная паста, обладающая сниженной себестоимостью, способом повышенной экономичности за счет исключения многостадийного предварительного приготовления исходного абразивного материала. 1 табл., 5 пр.

ПОЛИРОВАЛЬНАЯ СУСПЕНЗИЯ ДЛЯ САПФИРОВЫХ ПОДЛОЖЕК

Изобретение относится к водным суспензиям для полирования сапфировых подложек. Полирующая суспензия содержит, мас. %: стабилизированный оксидом натрия коллоидный кремнезем с размером частиц 75-80 нм в пересчете на оксид кремния - 39-40; хлористый натрий - 1,2-1,4; кальцинированную соду - 1,6-1,8 и воду - до 100. Изобретение обеспечивает повышенное время использования полирующей суспензии, высокую скорость съёма и низкую шероховатость поверхности. 1 табл.

СОСТАВ ДЛЯ ПОЛИРОВАНИЯ ОПТИЧЕСКИХ ПОВЕРХНОСТЕЙ

Состав для полирования оптических поверхностей деталей, изготовленных из стекла или пластмассы, представляет собой водную суспензию, содержащую альфа-оксид алюминия и оксид церия. Определенное соотношение компонентов и размер частиц альфа-оксида алюминия и оксида церия в суспензии обеспечивают высокое качество полирования. 3 з.п. ф-лы, 4 ил., 1 табл.

СПОСОБ ОБРАБОТКИ КЕРАМИЧЕСКОЙ ПОДЛОЖКИ (ВАРИАНТЫ)

... 1. Способ обработки керамической подложки, содержащей алюминий, который включает в себя следующие операции: использование суспензии, введенной между подложкой и обрабатывающим инструментом, причем суспензия содержит абразив и добавку, содержащую фосфорное соединение; и перемещение подложки относительно обрабатывающего инструмента. 2. Способ по п.1, в котором подложку полируют. 3. Способ по п.1, в котором абразив содержит оксид алюминия. 4. Способ по п.3, в котором оксид алюминия имеет средний размер частиц в диапазоне от 0,05 до 1,5 мкм. 5. Способ по п.4, в котором средний размер частиц лежит в диапазоне от 0,10 до 1,0 мкм. 6. Способ по п.5, в котором средний размер частиц лежит в диапазоне от 0,10 до 0,5 мкм. 7. Способ по п.1, в котором абразив выбирают из группы, в которую входят диоксид кремния, диоксид циркония, карбид кремния, карбид бора и алмаз. 8. Способ по п.7, в котором абразив представляет собой диоксид циркония. 9. Способ по п.1, в котором подложка представляет собой оксид алюминия ...

КОМПОЗИЦИИ ДЛЯ ЧИСТОВОЙ ОБРАБОТКИ С УМЕНЬШЕННЫМ СОДЕРЖАНИЕМ ЛЕТУЧИХ ОРГАНИЧЕСКИХ СОЕДИНЕНИЙ

... 1. Композиция для чистовой обработки, состоящая из смеси абразивных частиц и эмульсии, причем указанная эмульсия содержит воду, летучий силоксан и смазку; и указанная композиция для чистовой обработки практически не содержит нелетучих силиконовых материалов, 2. Композиция для чистовой обработки по п.1, отличающаяся тем, что указанный летучий силоксан составляет примерно 3-20 вес.% указанной композиции для чистовой обработки. 3. Композиция для чистовой обработки по п.1, отличающаяся тем, что вода составляет от примерно 10 до примерно 60 вес.% указанной композиции для чистовой обработки; указанный летучий силоксан составляет от примерно 3 до примерно 20 вес.% указанной композиции для чистовой обработки; указанная смазка составляет от примерно 0,1 до примерно 10 вес.% указанной композиции для чистовой обработки; и указанные абразивные частицы составляют от примерно 1 до примерно 60 вес.% указанной композиции для чистовой обработки. 4. Композиция для чистовой обработки по п.1, отличающаяся ...

ПРИМЕНЕНИЕ ПОЛИЭТИЛЕНГЛИКОЛЯ ДЛЯ КОНТРОЛЯ ХАРАКТЕРА РАСПЫЛА РАСПЫЛЯЕМЫХ ЖИДКИХ АБРАЗИВНЫХ ЧИСТЯЩИХ СРЕДСТВ

... 1. Способ контроля характера распыла распыляемой жидкой абразивной композиции, которая распыляется через ручной курковый распылитель, причем указанный способ включает стадии:a) получения жидкой композиции, содержащей: (i) от около 10% мас. до около 25% мас. карбоната кальция; (ii) от около 1% мас. до около 10% мас. анионного поверхностно-активного вещества; (iii) от около 1% мас. до около 5% мас. неионогенного поверхностно-активного вещества; (iv) воду и (v) количество щелочного и/или кислотного регулятора (регуляторов) pH, достаточное для буферизации конечной композиции до pH от около 10 до около 14; иb) добавления от около 0,01% мас. до около 0,20% мас. полиэтиленгликоля, обладающего молекулярной массой от около 4000 до около 100000 Да для получения распыляемой жидкой абразивной композиции, имеющей контролируемый характер распыла.2. Способ по п.1, в котором указанное анионное поверхностно-активное вещество выбирают из группы, состоящей из сульфатов, сульфонатов и мыл жирных кислот и их ...

КОМПОЗИЦИИ ДЛЯ ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВКИ, СОДЕРЖАЩИЕ ОДИН ИЛИ БОЛЕЕ ПОЛИМЕРОВ, ВЫБРАННЫХ ИЗ ГРУППЫ, ВКЛЮЧАЮЩЕЙ N-ВИНИЛ-ГОМОПОЛИМЕРЫ И N-ВИНИЛОВЫЕ СОПОЛИМЕРЫ

Жидкая полировальная паста

СПОСОБ ПОЛУЧЕНИЯ ДЗЕТА-ОТРИЦАТЕЛЬНОЙ ДИСПЕРСИИ НАНОАЛМАЗОВ И ДЗЕТА-ОТРИЦАТЕЛЬНАЯ ДИСПЕРСИЯ НАНОАЛМАЗОВ

КОМПОЗИЦИЯ ДЛЯ СМР, СОДЕРЖАЩАЯ АБРАЗИВНЫЕ ЧАСТИЦЫ, СОДЕРЖАЩИЕ ДИОКСИД ЦЕРИЯ

КОМПОЗИЦИЯ ДЛЯ ОЧИСТКИ И ПОЛИРОВАНИЯ ПОВЕРХНОСТИ

Настоящее изобретение относится к композиции для очистки и полирования поверхностей, которая особенно удобна в применении при очистке, полировании и обработке для придания водонепроницаемости поверхностей различных типов материалов с различной поверхностной текстурой и которая может быть использована без предварительной промывки или очистки обрабатываемой поверхности. Композиция содержит примерно от 1,0 до 1,5 об.% гексана, примерно от 0,5 до 0,8 об. % чистой кремнийорганической жидкости, примерно от 1,0 до 2,0 об.% карнаубского воска, примерно от 0,5 до 1,0 об.% растворителя - алифатического гликоля и воду, причем все количества даны по отношению к конечному объему композиции.

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА SiGeВ ПРИСУТСТВИИ XMП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ

... 1. Способ изготовления полупроводниковых устройств, включающий химико-механическое полирование элементарного германия и/или материала SiGe, в котором 0,1≤x<1, в присутствии композиции для химико-механического полирования (ХМП) содержащий:(A) неорганические частицы, органические частицы или их смесь или композит,(B) по меньшей мере один тип окислительного реагента,(C) по меньшей мере один тип органического соединения, которое включаетпо меньшей мере {к} фрагментов (Z), но исключены соли, анионы которыхявляются неорганическими, и единственным органическим катионом которыхявляется [NRRRR], где {к} равно 1, 2 или 3,(Z) означает гидроксигруппу (-ОН), алкоксигруппу (-OR), гетероциклическую алкоксигруппу (-ORв качестве части гетероциклической структуры), карбоксигруппу (-СООН), карбоксилатную группу (-COOR), аминогруппу (-NRR), гетероциклическую аминогруппу (-NRW в качестве части гетероциклической структуры), иминогруппу (=N-Rили -N=R), гетероциклическую иминогруппу (=N-Rили -N=Rв качестве части ...

ВОДНАЯ ПОЛИРУЮЩАЯ КОМПОЗИЦИЯ И СПОСОБ ХИМИКО-МЕХАНИЧЕСКОГО ПОЛИРОВАНИЯ ПОДЛОЖЕК, СОДЕРЖАЩИХ ПЛЕНКИ ДИЭЛЕКТРИКА ОКСИДА КРЕМНИЯ И ПОЛИКРЕМНИЯ

... 1. Водная полирующая композиция, содержащая(A) по меньшей мере, один тип абразивных частиц, содержащих или состоящих из диоксида церия, которые положительно заряжены при диспергировании в водной среде, свободной от компонента (C) и имеющей pH в интервале от 3 до 9, что подтверждается электрофоретической подвижностью;(B) по меньшей мере, один растворимый в воде полимер, выбранный из группы, состоящей из линейных и разветвленных гомополимеров и сополимеров алкиленоксидов; и(C) по меньшей мере, один анионный фосфатный диспергирующий агент,где композиция содержит растворимый в воде полимер (В) в количествах от 0,001 до 5 мас.%.2. Водная полирующая композиция по п.1, отличающаяся тем, что абразивные частицы (А) состоят из диоксида церия.3. Водная полирующая композиция по п.1, отличающаяся тем, что она содержит, в пересчете на полную массу указанной полирующей композиции, от 0,005 до 10 мас.% абразивных частиц (A).4. Водная полирующая композиция по п.1, отличающаяся тем, что линейные и разветвленные ...

ПОЛИРУЮЩИЙ СОСТАВ

... 1. Полирующий состав, содержащий по меньшей мере воду и диоксида кремния, отличающийся тем, что состав удовлетворяет всем следующим требованиям:(a) удельная площадь поверхности диоксида кремния, содержащегося в полирующем составе, составляет 30 м/г или более;(b) полирующий состав содержит 2% по массе или более диоксида кремния, имеющего размер частиц от 10 до 50 нм;(c) полирующий состав содержит 2% по массе или более диоксида кремния, имеющего размер частиц от 60 до 300 нм; и(d) значение, полученное при делении среднего размера частиц диоксида кремния, описанного в условии (c), на средний размер частиц диоксида кремния, описанного в условии (b), составляет 2 или более.2. Полирующий состав по п. 1, отличающийся тем, что как массовая доля диоксида кремния, описанного в условии (b), так и массовая доля диоксида кремния, описанного в условии (c), составляют 4% по массе или более.3. Полирующий состав по п. 1, отличающийся тем, что процентное содержание диоксида кремния, описанного в условии ...

ПРЕПАРАТ БЛАГОРОДНЫХ МЕТАЛЛОВ ИЛИ ГЛЯНЦЕВЫЙ ДЛЯ ПРЯМОЙ И НЕПРЯМОЙ ТРАФАРЕТНОЙ ПЕЧАТИ И ПЕРЕВОДНОЕ ИЗОБРАЖЕНИЕ, СОДЕРЖАЩЕЕ УКАЗАННЫЙ ПРЕПАРАТ

... 1. Препарат благородных металлов или глянцевый, отличающийся тем, что он содержит, по меньшей мере, один полиаминоамид. 2. Препарат по п.1, отличающийся тем, что аминные функции полиаминоамида являются дезактивированными. 3. Препарат по п.2, отличающийся тем, что аминные функции полиаминоамида являются протонированными. 4. Препарат по одному из п.1 или 2, отличающийся тем, что он дополнительно содержит одно или несколько веществ из группы, включающей резинаты металлов, металлорганические соединения, природные смолы, искусственные смолы, смоляные масла, органические красители и наполнители, тиксотропные средства, растворители и пеногасители. 5. Препарат по п.1, отличающийся тем, что доля полиаминоамида в нем составляет от 3 до 50 вес.%. 6. Применение препарата благородных металлов или глянцевого по любому из пп.1-5 для непрямой и прямой трафаретной печати на силикатных поверхностях, например, на керамике, стекле или фарфоре. 7. Керамическое переводное изображение, отличающееся тем, что оно ...

АБРАЗИВЫ С ПОКРЫТИЕМ

... 1. Сверхтвердый абразив с покрытием, содержащий сердцевину из сверхтвердого абразивного материала, внутренний слой из карбида, нитрида, борида или карбонитрида металла, химически связанного с наружной поверхностью сверхтвердого абразивного материала, и наружный слой из карбонитрида металла, осажденного на внутренний слой. 2. Сверхтвердый абразив с покрытием по п.1, у которого наружный слой выполнен из карбонитрида титана. 3. Сверхтвердый абразив с покрытием по п.1, у которого наружный слой осажден методом конденсации из паровой фазы. 4. Сверхтвердый абразив с покрытием по п.1, у которого сверхтвердый абразивный материал представляет собой абразивный материал на основе алмаза или кубического нитрида бора (cBN). 5. Сверхтвердый абразив с покрытием по п.4, у которого сверхтвердый абразивный материал выбран из группы, включающей абразивные частицы алмаза или cBN, подложку из поликристаллического алмаза, подложку из термостабильного поликристаллического алмаза, подложку из поликристаллического ...

Mechano-chemical polishing abrasive - comprises colloidal silica paste and mechanical abrasive for high speed polishing of hard substrate, e.g. ceramics or glass

Mechano-chemical polishing abrasive consists of a paste of colloidal Si02 (I) and mechanical abrasive(s) (II). Pref. (I) has pH over 7 and is used as aq. paste. (II) is Fe203, Fe304, MgO, BaCO3, CaCO3, Mn02, CeO, Si02, Ce02, Cr203 and/or Al203, esp. Fe203; and has a particle size of ca. 0.1-10 pref. 0.5-5 microns. The abrasive contains ca. 0.07-2.0 (wt.) % (II), 13-99.2% (I) and 0.7-85% water. USE/ADVANTAGE - For use in polishing. It is suitable for polishing hard substrates, e.g. ceramics, crystalline materials, glass and similar materials requiring a highly polished surface including Si (wafers), sapphire, metals, glass Al203; Si3N4, GaAs, MgO and Zr02. It is economicalsta ...

Schleifmittel und Verfahren zum Polieren von Lichtwellenleiter-Endflächen

Silicone-free and wax-free polishing agent, useful for clear lacquering of automobile car bodies, comprises mineral oil, water and aluminum oxide

Silicone-free polishing agent (I), preferably for clear lacquering of automobile car bodies comprises mineral oil, water and aluminum oxide, where (I) is wax-free.

MIT ZWEIWERTIGEN METALLOXIDEN DOTIERTES ALUMINIUMOXID, HERGESTELLT DURCH FLAMMENHYDROLYSE UND DARAUS HERGESTELLTE WÄSSRIGE DISPERSIONEN

Neisseria meningitidis Kombinationimpfstoffe

WISCHPFLEGEMITTEL

GLEITMITTEL AUF BASIS VON OCTADECAN

Sohlenschutzmittel

Verfahren zur Herstellung eines streufaehigen Leder- und Fussbodenpflegemittels

Poliermasse

Aminoalkylsilicone und ihre Verwendung

Schleifartikel, der eine ungleichförmige Verteilung von Öffnungen aufweist

Schleifartikel, der Folgendes umfasst: ein beschichtetes Schleifmittel, das mehrere Aperturen aufweist, die in einem Aperturmuster angeordnet sind, wobei das Aperturmuster eine gesteuerte ungleichförmige Verteilung aufweist.

POLIERVERFAHREN UND POLIERFLÜSSIGKEIT

Herstellung von Putzmitteln auf OElgrundlage

Neue Verwendung für Erdalkalimetallsalze

Strontium carbonate, barium carbonate, Strontium sulphate and barium sulphate having a sufficient degree of fineness, especially when produced synthetically, are suitable as abrasive agents in the chemical-mechanical polishing of microelectronic components such as semiconductors. The compounds are used as slurries which can contain a dispersing agent and whose pH value is advantageously greater than 8.

Verwendung von Fettalkoholen und Fettethern als Gleitmittel für Sportgeräte

Die vorliegende Erfindung betrifft langkettige Fettalkohole und Fettalkoholalkylether zur Verbesserung der Gleiteigenschaften von Sportgeräten und insbesondere Wintersportgeräten, Gleitmittelzusammensetzungen, die diese enthalten, sowie das Verfahren zur Beschichtung der Gleitflächen von Sportgeräten mit langkettigen Fettalkoholen und Fettalkoholalkylethern.

Organische Siliciumverbindungen und Wachse enthaltende Polituren

Polymer compositions used as polishes

Resins i.e. thermosets and thermoplastics such as polyesters, polyethylene, polypropylene, polystyrene, acrylics, PVC, polyamide, cellulosics as raw materials are characterised in that they are used to clean, polish smooth, protect, and seal-off against external agent, surfaces such as those of metal, wood, glass, enamel, ceramics etc. etc., with or without addition of materials other than water.

Metal oxide powder useful for high-precision polishing of a semiconductor device, substrate for organoluminescence, mechanical and optical elements, comprising aggregates formed by cohesion of primary particles

The metal oxide powder (I) comprising aggregates formed by cohesion of primary particles, which has a cohesive degree (alpha ) of 1.1 to 2.0 and a cohesive scale (beta ) of 3 to 10, the cohesive degree (alpha ) and the cohesive scale (beta ) being defined by specific formula. The metal oxide powder (I) comprising aggregates formed by cohesion of primary particles, which has a cohesive degree (alpha ) of 1.1 to 2.0 and a cohesive scale (beta ) of 3 to 10, the cohesive degree (alpha ) and the cohesive scale (beta ) being defined by formula (alpha =6/(SXrho Xd(XRD)) (I) and formula (beta =weight average particle diameter/d(XRD)) (II); S : specific surface area of the powder; rho : density; and d(XRD) : particle diameter of the powder determined by X-ray diffraction analysis. Independent claims are included for the following: (1) preparing (M1) (I), involves mixing a diluent with a metal oxide precursor to produce a mixture having a diluent content in the range of 40-70 weight %, milling the ...

POLIERMITTELZUSAMMENSETZUNG UND ANWENDUNGSVERFAHREN

CMP SUSPENSION ENTHALTEND EINEN FESTEN KATALYSATOR

Polierzusammensetzung für Aluminiumscheiben und Polierverfahren

Verfahren zur Darstellung von Schuhcreme und Bohnermasse

Chemische-mechanische Schleifzusammensetzung für Halbleiterverarbeitung

Verfahren zur Herstellung eines Lederkonservierungsmittels

Polieraufschlämmung für eine Chalkogenidlegierung

Die Erfindung stellt eine chemisch-mechanische Polierzusammensetzung zum chemisch-mechanischen Polieren eines Chalkogenid-Phasenänderungslegierungssubstrats bereit. Die Zusammensetzung umfasst Wasser, 0,1 bis 30 Gew.-% kolloidales Siliziumdioxid-Schleifmittel, mindestens ein Poliermittel, ausgewählt aus 0,05 bis 5 Gew.-% Halogenverbindung, 0,05 bis 5 Gew.-% Phthalsäure, 0,05 bis 5 Gew.-% Phthalsäureanhydrid und Salzen, Derivaten und Gemischen davon. Die chemisch-mechanische Polierzusammensetzung weist einen pH-Wert von 2 bis weniger als 7 auf.

Polierzusammensetzung

LATEX

Neue Naturwachsoxidate auf Basis von Reiskleiewachs und Sonnenblumenwachs und Verfahren zu deren Herstellung

Die Erfindung betrifft ein Naturwachsoxidat, ausgewählt aus Reiskleiewachsoxidat und/oder Sonnenblumenwachsoxidat, mit einer Säurezahl > 45 bis < 70 mg KOH/g sowie ein Verfahren zu dessen Herstellung.

Wachsersatzmittel

Zusammesetzung für das Chemisch-Mechanische Polieren (CMP)

Bei einer Zusammensetzung in Form einer Dispersion oder einer Slurry für das chemisch-mechanische Polieren (CMP) bei der Herstellung von elektronischen oder mikroelektronischen Bauelementen, insbesondere Halbleiterelementen, und/oder eines mechanischen Bauelementes, insbesondere eines mikroelektromechanischen Bau- oder Halbleiterelementes (MEMS), soll eine Lösung geschaffen werden, die es ermöglicht, eine definiert einstellbare Teilchengrößenverteilung mit verbesserter Uniformität hinsichtlich Größe und Morphologie der Partikel zu erzielen. DOLLAR A Dies wird dadurch erreicht, dass die Zusammensetzung reine Titandioxidpartikel oder titandioxidhaltige Partikel enthält, welche vor, insbesondere unmittelbar vor, oder bei Zubereitung der Dispersion oder der Slurry einem Nassmahlungsschritt bzw. einer Nassmahlung ausgesetzt sind.

Neues Verfahren zum chemisch mechanischen Polieren von Isolationsschichten aus Silizium oder Silizium enthaltenden Materialien

Wässrige Dispersion zum chemisch-mechanischen Polieren

Verfahren zum Polieren eines Werkstücks unter Verwendung von elektrolytisch reduziertes Wasser

KRAFTFAHRZEUG-PFLEGEMITTEL

Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht

Verfahren zum Polieren einer Halbleiterscheibe, die mit einer verspannt-relaxierten Schicht von Si1-xGex versehen ist, umfassend einen ersten Schritt einer mechanischen Bearbeitung der Si1-xGex-Schicht der Halbleiterscheibe in einer Poliermaschine unter Verwendung eines Poliertuchs, welches fest gebundene Abrasivstoffe mit einer mittleren Partikelgröße von 0,10,55 m enthält, und unter Zufuhr einer Poliermittellösung, welche frei von Feststoffen ist und die keine Oxidationsmittel zur Auflösung von Germanium enthält, sowie einen zweiten Schritt einer chemo-mechanischen Bearbeitung der zuvor mechanisch bearbeiteten Si1-xGex-Schicht der Halbleiterscheibe unter Verwendung eines Poliertuchs, das keine fest gebundenen Abrasivstoffe enthält, und unter Zuführung einer Poliermittelsuspension, welche Abrasivstoffe enthält.

Aqueous dispersion of cerium oxide-coated doped silica powder, used for chemical-mechanical polishing of semiconductor substrate or coating or in shallow trench insulation, is obtained by mixing doped silica core with cerium salt solution

Aqueous dispersion contains a powder obtained by mixing, preferably spraying, a core of doped pyrogenic silica with a cerium (Ce) salt solution or suspension to form a Ce oxide shell. The powder in the dispersion has an average secondary particle size not more than 0.2 micron. An Independent claim is also included for the production of the aqueous dispersion by predispersing the powder in an aqueous medium, optionally in conjunction with additives, then dispersing the predispersion.

Polierzusammensetzung und Polierverfahren

Die Konzentration von entweder Natrium-Ionen oder Acetat-Ionen beträgt in einer Polierzusammensetzung 10 ppb oder weniger, oder die Konzentrationen an Natrium-Ionen und Acetat-Ionen betragen 10 ppb oder weniger. Die Polierzusammensetzung enthält vorzugsweise ein wasserlösliches Polymer wie beispielsweise Hydroxyethylcellulose, ein Alkali wie beispielsweise Ammoniak, und Schleifkörner wie beispielsweise Kolloid-Siliziumdioxid. Die Polierzusammensetzung wird insbesondere zum Polieren der Oberflächen von Halbleiter-Wafern wie beispielsweise Siliziumdioxid-Wafer eingesetzt, insbesondere zum Endpolieren der Oberflächen solcher Wafer.

Polishing composition

Chemical mechanical polishing of dual orientation polycrystalline materials

Polishing composition and polishing method

WAX POLISHING COMPOSITIONS

... 1,221,739. Wax polishes. FMC CORP. 23 May, 1969 [28 May, 1968], No. 26373/69. Heading C5W. A cleaning polish for cars comprises a wax, an abrasive, a solvent, and 0À5-5% by wt. of the total composition of tris-(2-butoxyethyl)- phosphate, tris-(2-hexoxyethyl)-phosphate or bis- (2 - butoxyethyl) - 2 - butoxyethyl phosphonate. The wax may be a carnauba, montan, paraffin, polyethylene or Fischer-Tropsch wax, or a commercially available wax that is an ester, an emulsified ester, a partially-saponified ester, acid, or modified oxidized Fischer- Tropsch wax. The abrasive specified is diatomaceous silica. Suitable solvents include iparaffins having a boiling range 372-409‹ F. and Kauri-Butanol value 27, and aliphatics boiling at 362-458‹ F. with a Kauri-Butanol value of 37. A soap of oleic or tall oil fatty acid and triethanolamine or morpholine may be included as emulsifier. The ingredients may be compounded to a hard paste (Examples 1-3), or liquid (Examples 4-7).

Abrasive product

Improved liquid polish

A polishing composition for motor-car bodies and similar surfaces comprises oil varnish, petroleum spirit or similar light hydrocarbons, and colouring material. For example, carriage varnish is mixed with aviation spirit, and an oil soluble colour matching the surface to be polished is added. Specifications 1382/87, [Class 76, Leather], and 2066/08, [Class 95, Paints &c.], are referred to.

SURFACE PROTECTANT COMPOSITIONS

Substituted Amines, a Process for their Production and Compositions Containing them

... 1,199,585. N,N - di - (triazinyl) - alkylamines. J. R. GEIGY A.G. 26 Oct., 1967 [27 Oct., 1966], No. 48705/67. Heading C2C. [Also in Division C5] Novel compounds of the general formula where R 1 , R 2 , R 3 and R 4 each represent an amino group substituted by one or two openchained, cyclic or heterocyclically substituted open-chained aliphatic radicals, or an unsubstituted or substituted, saturated 3-7 membered N-heterocycle which may contain further hetero atoms, which heterocycle is bound by way of a ring N-atom, R 5 is -N = C(R 1 )(R 2 ) or R 1 , R 2 , R 3 or R 4 ; and R 6 =H or C 1-4 alkyl, are prepared by reacting a compound of formula:- with where one of Y and Y1 = F, Cl or Br and the other is -NH 2 or the radical of a primary or secondary open chain aliphatic amine, the reaction being performed in the presence of an acid-binding agent and, optionally, an inert gas and a solvent or diluent at 100-300‹ C. In the examples 2 - (11,31 - di - n - octadecyl - ...

POLISHING COMPOSITION AND POLISHING METHOD FOR MAGNETIC DISK SUBSTRATE

The invention discloses a polishing composition containing abrasive grain, acid, oxidising agent and an azole compound or its derivatives. The abrasive grain may be colloidal silica. The acid may be an organic acid such as citric acid, maleic acid or malonic acid, or an inorganic acid such as orthophosphoric acid or polyphosphoric acid. The oxidising agent may be hydrogen peroxide. The azole compound may be benzotriazole. Further, the polishing composition may contain a sodium salt, potassium salt or ammonium salt of an organic or inorganic phosphate, phosphonate or citrate acid. The polishing composition is used for polishing a magnetic disk substrate.

Surface enhancement formulation

NOVEL POLISH COMPOSITIONS

Water-in-oil compositions having a continuous oil phase comprising a silicone and a hydrocarbon cleaning component, a discontinuous water phase, comprise as emulsifier an organopolysiloxane of the formula Z(Me)2SiO?(Me)2SiO!x?(Me)(R)SiO!y?(Me)(QR')SiO!z-Si(Me2)Z where Me denotes methyl, Q a polyoxyalkylene radical, R a C6-C16 alkyl radical, R' an alkylene and Z a monovalent radical. The organopolysiloxane allows stability and easy emulsification of water into an oil phase comprising those silicones and hydrocarbons which are preferred in polishes.

Polishing method for memory hard disks

Polishing composition

A polishing composition to be used for polishing a magnetic disk substrate, which comprises one member selected from a phosphate and a phosphorus compound, or two members selected from phosphoric acid, a phosphate and a phosphorus compound; silica; and water; wherein when phosphonic acid is contained alone aluminium nitrate is not contained. Another polishing composition is shown that comprises at least one member from a phosphoric acid, a phosphate and a phosphorus compound; silica; water; and diammonium ethylenediamine tetraacetate. The phosphorus compound may be pyrophosphoric acid, phosphonic acid, phosphinic acid, hydroxyethylidene diphosphonic acid, nitrotri(methylene phosphonic acid) or phosphonobutane tricarboxylic acid, or a salt thereof.

Polishing composition for magnetic disk

A polishing composition for a magnetic disk, comprising alumina, water, a peroxide and an organic acid; a polishing process for a substrate to be polished, comprising the step of polishing the substrate to be polished with the polishing composition; and a process for manufacturing a substrate, comprising the step of polishing a substrate to be polished with the polishing composition. The polishing composition can be suitably used for the manufacture of a magnetic disk substrate for high-quality hard disks and the like. The organic acid may be selected from sulphur-containing organic acids, carboxylic acids, and phosphorus containing acids. The polishing composition may further contain an inorganic acid.

Polishing composition and polishing method

A polishing composition includes an abrasive, at least one acid selected from the group consisting of orthophosphoric acid, diphosphoric acid, polyphosphoric acid, metaphosphoric acid, hexametaphosphoric acid, methyl acid phosphate, ethyl acid phosphate, ethyl glycol acid phosphate, isopropyl acid phosphate, phytic acid, and 1-hydroxyethylidene-1,1-diphosphonic acid; at least one salt selected from the group consisting of sodium salts, potassium salts, and lithium salts of an acid selected from orthophosphoric acid, diphosphoric acid, polyphosphoric acid, metaphosphoric acid, hexametaphosphoric acid, methyl acid phosphate, ethyl acid phosphate, ethyl glycol acid phosphate, isopropyl acid phosphate, phytic acid, and 1-hydroxyethylidene-1,1-diphosphonic acid; an oxidizing agent; and water. Also shown is a polishing method using the polishing composition especially for polishing a substrate for a magnetic disk.

Polymer wax coating

A Liquid Metal Polish in which the Solids Always Remain Suspended in the Liquids.

... 26,182. Ockenden, H. F., and Fowler, J. A. Nov. 12. Saponaceous cleansing-compositions, materials for making.-A liquid metal polish is obtained by compounding chalk or other polishing-agent with ammonia, oleic acid, acetic acid, ammonium oxalate, and hot water. The composition may be thinned with ammonia, petroleum, or both.

Emulsion polish systems

Alkali soluble polymerized partial esters having monovinyl aromatic groups and allyl groups connected by ester linkages to dicarboxylic acid residues having free carboxylic acid radicals thereon may be prepared by reacting a polyol derived from a copolymer of a monovinyl aromatic compound and allyl alcohol with certain selected carboxylic anhydrides. The carboxylic anhydride may be phthalic, succinic, Nadic, methyl-Nadic, tetrahydrophthalic or hexahydrophthalic anhydride. The preferred monovinyl aromatic compound is styrene and the allyl alcohol-styrene copolymer and selected carboxylic anhydride are reacted in proportions such that the solid resin product has an acid number from 70 to 180. This acid number can be achieved by reacting 3 to 6 moles of carboxylic anhydride with 1 mole of polyol. The polyol may be dissolved in a hydrocarbon solvent and then treated with a carboxylic anhydride. A polish system can be produced containing the polymerized partial ester of the invention, polyethylene ...

Polish formulation

Aqueous polish formulations comprise (1) an emulsifiable polyolefin wax; (2) an acrylic interpolymer in the form of a latex of particle size not greater than 0.06 microns and of refractive index 1.47 to 1.59; (3) an alkali-soluble resin; and (4) a levelling agent comprising 8.5 to 12.7 parts by weight tributoxyethyl phosphate, 0.6 to 1.0 parts by weight of a hydrolytically-stable polysiloxane-oxyalkylene block copolymer of molecular weight below 25,000 and a polysiloxane content in the range 30 to 60% by weight, and 5.29 to 10.6 parts by weight of diethylene glycol monoethyl ether, based on 100 parts by weight of (1) and (2). The waxes may be derived from polymers of ethylene and/or propylene, optionally together with other ethylenically unsaturated compounds. A preferred wax is prepared by blending a pyrolysed polyethylene, as a melt or in solution, with maleic anhydride. The interpolymers are derived from a major proportion of an acrylic or substituted acrylic ester and a minor proportion ...

Polishing composition

A polishing composition comprises an organic polybasic acid (e.g. citric acid, tartaric acid, or malic acid), an abrasive (such as alumina), water, and an organic nitrogen-containing compound having at least two amino groups, at least two imino groups, or at least one amino group and at least one imino group. The nitrogen compound may have a molecular weight of 150-100000 and is preferably present in an amount of 0.001-0.5 wt.% within the composition. The ratio of the nitrogen compound to the polybasic acid may be 1:10000 to 1:1. The composition may have a pH of 1-7 and may further comprise an oxidising agent. Methods of manufacturing a substrate and reducing surface stains on a substrate are also disclosed, the methods comprising the steps of feeding the composition to the substrate at a flow rate of 0.01-0.5 mL/minute per 1 cm<2> of substrate and polishing the substrate with a polishing pad.

Polishing composition

Polishing composition

Cleansing and polishing aided by abrasion

Improvements in or relating to wax polishes and the like

A wax composition contains a mixture of an organopolysiloxane and a titanium compound of formula where m and p are integers, p being less than 2(m + 1), OR1 is an alkoxy radical and RCOO is an acyloxy radical. Waxes specified are paraffin wax, beeswax, synthetic ozokerite and microcrystalline wax. The composition may also contain an alkyl titanate and/or an alkyl zirconate.ALSO:A composition which may be added to waxes comprises an organopolysiloxane and a titanium compound of formula TimOm-1(OR1)2(m+1)-p(RCOO)p where m and p are integers, p being less than 2(m + 1), OR1 is an alkoxy radical and RCOO is an acyloxy radical. The composition may also contain an alkyl titanate and/or an alkyl zirconate. Organopolysiloxanes specified are methylated silicone resin having mono- and dimethyl groupings.

Cleaning materials including fly ash

Fly ash and/or cenosphere are waste industrial products with very similar chemical composition to soil. Due to the mainly spherical particles making up the bulk of fly ash and all of cenosphere, the inventor has used them as abrasive agents to aid cleansing and or polishing various surfaces, which are much finer and smoother to the touch. Cosmetic and/or household products with consistencies of viscous to runny pastes, have been prepared by the inventor to:

Polishing composition

A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V / 0.5 Í R + 40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

Polishing composition

Polishes and their use

Improved abrasive article

... 1,014,297. Abrasive articles. ARMOUR & CO. Aug. 22, 1962 [Nov. 24, 1961], No. 32337/62. Heading B3D. An abrasive pad or web comprises a non- woven web of randomly interlaced fibres bonded at crossing contact points by a binder having a Knoop hardness number of 6 or less, preferably 1 or 2, forming a substantially continuous film about the fibres, and abrasive grains resiliently bonded to the fibres to form a protective covering generally throughout their length. The fibres may be of organic material, such as nylon, crimped or curled three-dimensionally and brought into interlaced non-woven relation and integrated into a pad or web by a plasticized elastomer binder, e.g. rubber, latex, butadiene-styrene dispersions, neoprene, polyvinyl chloride or vinyl latex. The binder may be sprayed or rolled on the web or the latter may be dipped into a slurry of the binder. The abrasive grains, which may be silicon carbide, aluminium oxide, garnet, flint, emery or pumice,' may be applied with the binder ...

Manufacture of aqueous emulsions for insecticidal purposes

... 547,871. Brom and chlor compounds. HUGHES, R. M. (Geigy Akt.-Ges., J.R.). Dec. 12, 1941, No. 16055. [Class 2 (iii)] [Also in Group VI] Aqueous emulsions having insecticidal properties include compounds of the formula in which X is chlorine or bromine, R 1 is an organic radical having at least 3 carbon atoms. and R 2 is an organic radical having at least 50 carbon atoms. 4:41-Dichlorodiphenyltrichlorethane and the corresponding dibromo compound, which may be prepared by condensing chloral with chloro-or bromo-benzene with the aid of sulphuric acid are mentioned.

Polishing fluid and polishing method

Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.

Silicon polishing compositions with high rate and low defectivity

The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.

Polishing liquid composition

A polishing liquid composition that makes it possible to provide a polished substrate surface on which scratches and/or waviness are reduced, without impairing productivity, is provided, and further, a method for manufacturing and polishing a substrate using this polishing liquid composition is provided. The polishing liquid composition contains an abrasive, a water-soluble polymer, and water, wherein the water-soluble polymer has a sulfonic acid group, and has an aromatic ring in each of a main chain and a side chain. The method for manufacturing a substrate, and the method for polishing a substrate, include performing polishing by supplying the above-described polishing liquid composition to a surface to be polished of a substrate to be polished, bringing a polishing pad into contact with the surface to be polished, and moving the polishing pad and/or the substrate to be polished.

Cmp polishing liquid and polishing method

The invention relates to a CMP polishing liquid comprising a medium and silica particles as an abrasive grain dispersed into the medium, characterized in that: (A1) the silica particles have a silanol group density of 5.0/nm 2 or less; (B1) a biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm; and (C1) an association degree of the silica particles is 1.1 or more. The invention provides a CMP polishing liquid which has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed, and a polishing method producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

CMP Fluid and Method for Polishing Palladium

The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

Shaped abrasive particles with an opening

An abrasive comprising shaped abrasive particles each with an opening. The shaped abrasive particles are formed from alpha alumina and have a first face and a second face separated by a thickness t. The opening in each of the shaped abrasive particles can improve grinding performance by reducing the size of a resulting wear flat, can provide a reservoir for grinding aid, and can improve adhesion to a backing in a coated abrasive article.

Soil resistant floor treatment

A soil resistant floor surface treatment composition is provided. In particular, a composition comprises a maleic/olefin copolymer and an optional cleaning agent. Methods for treating a porous floor surface with a soil resistant agent and kits comprising a floor treatment composition, an applicator, a removal agent for removing a plurality of soils from a treated surface, and instructions for use are further provided by the present invention.

Polishing composition

To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a dishing inhibitor and water. Here, the abrasive grains comprise at least first abrasive grains and second abrasive grains; the ratio of an average primary particle size D L1 of the second abrasive grains to an average primary particle size D S1 of the first abrasive grains, D L1 /D S1 , is 5>D L1 /D S1 >1; the degree of association of the first abrasive grains is from 1.8 to 5; and the degree of association of the second abrasive grains is at most 2.5.

Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same

Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

Abrasive Free Silicon Chemical Mechanical Planarization

A chemical mechanical planarization method uses a chemical mechanical planarization composition that includes at least one nitrogen containing material and a pH modifying material, absent an abrasive material. The nitrogen containing material may be selected from a particular group of nitrogen containing polymers and corresponding nitrogen containing monomers. The chemical mechanical planarization method and the chemical mechanical planarization composition provide for planarizing a silicon material layer, such as but not limited to a poly-Si layer, in the presence of a silicon containing dielectric material layer, such as but not limited to a silicon oxide layer or a silicon nitride layer, with enhanced efficiency provided by an enhanced removal rate ratio.

Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R 8 is independently selected from hydrogen, a saturated or unsaturated C 1-15 alkyl group, C 6-15 aryl group, C 6-15 aralkyl group, C 6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

Abrasive Particles for Chemical Mechanical Polishing

An abrasive composition for polishing substrates including a plurality of abrasive particles having a poly-dispersed particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span value, by volume, being greater than or equal to about 15 nanometers, wherein the fraction of particles greater than about 100 nanometers is less than or equal to about 20% by volume of the abrasive particles.

Cerium salt, producing method thereof, serium oxide and cerium based polishing slurry

A cerium salt wherein, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio to the cerium salt before dissolution and cerium oxide produced by processing the cerium salt at high temperatures. Scratch on a surface to be polished can be reduced when a cerium based polishing slurry containing the cerium oxide particles is used, since an amount of impurities in cerium oxide particles and cerium salt particles, raw material thereof, is reduced for high purification.

Sapphire polishing slurry and sapphire polishing method

Disclosed is a polishing slurry for sapphire polishing that is capable of obtaining polishing speeds and smooth surfaces during the polishing of sapphire substrates that are equivalent to or better than in prior polishing processes even if the number of polishers and polishing hours are reduced. Also disclosed is a sapphire substrate polishing method. The slurry includes alumina abrasives and has a pH adjusted to the range of 10.0 to 14.0, and the sapphire is polished by means of the CMP technique by applying said slurry. The aforementioned alumina abrasives more preferably include at least α-alumina, and the content thereof is more preferably 0.01 to 50 wt %. The mean particle size of the aforementioned alumina abrasives is preferably 0.05 to 10 μm.

Slurry for chemical-mechanical polishing of metals and use thereof

A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

POLISHING LIQUID COMPOSITION

A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less. 1. A polishing method comprising:supplying a polishing liquid composition between an object to be polished and a polishing pad; andpolishing the object to be polished by moving the polishing pad relative to the object to be polished while the object to be polished is in contact with the polishing pad,the polishing liquid composition comprising:composite oxide particles containing cerium and zirconium;a dispersing agent; andan aqueous medium,wherein a powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray where λ=0.154050 nm, irradiation includesa first peak having a peak top in a diffraction angle 2θ range of 28.61 to 29.67°, wherein θ is a Bragg angle,a second peak having a peak top in a diffraction angle 2θ range of 33.14 in 34.53°,a third peak having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, anda fourth peak having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°,wherein a half-width of the first peak is 0.8° or less, and{'sub': 1', '2', '1', '2', '1', '2, 'wherein when there is at least one peak of a peak aderived from a cerium oxide and a peak aderived from a zirconium oxide in the powder X-ray diffraction spectrum, both heights of peak tops of the peaks a, aare 0% of a height of the peak top of the ...

Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same

A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

CERIUM OXIDE SLURRY, CERIUM OXIDE POLISHING SLURRY AND METHOD FOR POLISHING SUBSTRATE USING THE SAME

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer. 18-. (canceled)9. A method of producing a cerium oxide slurry comprisingoxidizing a cerium compound to obtain a cerium oxide,crushing the cerium oxide to obtain a cerium oxide particles,mixing the cerium oxide particles, a dispersant and water, and dispersing the cerium oxide particles in the water to obtain a cerium oxide disperse solution,microparticulating the cerium oxide particles by sedimentation and sorting the cerium oxide disperse solution to take out only the supernatant from the cerium oxide disperse solution,adjusting the solid matter concentration of the microparticulated cerium oxide disperse solution to prepare the cerium oxide slurry,measuring a ratio of weight of cerium oxide/weight of dispersant in the cerium oxide slurry, andadjusting the concentration of the dispersant in the cerium oxide slurry in order to obtain a ratio that settles in a range of 20 to 40,wherein mean size of particle of the cerium oxide particles in the cerium oxide slurry is 1 to 200 nm,wherein a weight of cerium oxide is the weight of the cerium oxide in the cerium oxide slurry, andwherein a weight of dispersant is the weight of the dispersant in the cerium oxide slurry obtained by measuring a concentration of the dispersant in the cerium oxide slurry after the cerium oxide particles are removed.10. The method of producing a cerium oxide slurry ...

METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID

In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element. 115-. (canceled)17. The abrasive grain according to claim 16 , wherein the ΔpH is not greater than 5.00.18. The abrasive grain according to claim 16 , wherein the cycle count N is 1.00 minor greater.19. The abrasive grain according to claim 16 , wherein the substitution count M is not greater than 1.0 min.20. The abrasive grain according to claim 16 , wherein the linear speed u is 5.00 m/min or greater.21. The abrasive grain according to claim 16 , wherein the mixing rate v is not greater than 1.00×10m/min.22. The abrasive grain according to claim 16 , wherein the rotational speed R is 30 minor greater.23. The abrasive grain according to claim 16 , wherein the temperature T is not higher than 60° C.24. The abrasive grain according to claim 16 , wherein a concentration of the salt of a tetravalent metal element in the first liquid is 0.01 mol/L or greater.25. The abrasive grain according to claim 16 , wherein an alkaline concentration of the second liquid is not greater than 15.0 mol/L.26. The abrasive grain according to claim 16 , wherein a pH of the liquid mixture is 2.0 to 7.0.27. The abrasive grain according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.28. A slurry obtained by mixing the abrasive grain according to with water.29. A polishing liquid obtained by mixing the slurry according to with an additive.30. A polishing liquid obtained by mixing the abrasive grain according to claim 16 , an additive and water.3127. A slurry obtained by mixing the abrasive grain according to claim with water.32. A polishing liquid obtained by mixing the slurry according to with an additive.33. A polishing liquid obtained by mixing the ...

Polishing composition and polishing method using same

A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES

An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices. 115-. (canceled)16. An aqueous polishing composition , comprising:(A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9, as evidenced by the electrophoretic mobility; (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids comprising at least two carbon atoms, a hydroxy group, and a carboxylic acid group in the molecule, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1;', '(b2) esters of the hydroxycarboxylic acids (b1) comprising at least one group selected from the group consisting of lactone groups, esterified hydroxy groups, and esterified carboxylic acid groups, with the proviso that a hydroxy group is present in (b2); and, '(B) at least one water-soluble and water-dispersible hydroxy group comprising component selected from the group consisting of'} (c1) linear and branched alkylene oxide homopolymers and copolymers;', '(c2) linear and branched, aliphatic and cycloaliphatic poly(N- ...

CMP Slurry Composition and Polishing Method Using the Same

A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing. 1. A CMP slurry composition comprising: metal oxide particles; a diisocyanate compound; and deionized water.2. The CMP slurry composition according to claim 1 , wherein the metal oxide particles are prepared by calcination claim 1 , flame oxidation claim 1 , or thermal synthesis.3. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria (CeO) particles claim 1 , silica (SiO) particles claim 1 , alumina (AlO) particles claim 1 , titania (TiO) particles claim 1 , zirconia (ZrO) particles claim 1 , or a combination thereof.4. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have an average particle diameter of about 70 nm to about 150 nm and a specific surface area of about 10 m/g to about 50 m/g.5. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have a positive zeta potential.6. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria particles.7. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a structure that contains a hydrophilic group at a terminal of a hydrophobic diisocyanate repeating moiety.9. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a weight average molecular weight of about 100 g/mol to about 100 claim 1 ,000 g/mol.10. The CMP slurry composition according to claim 1 , further comprising: an amphoteric ion compound.11. The CMP slurry composition according to claim 10 , wherein the amphoteric ion compound comprises alanine ...

Method and Composition for Chemical Mechanical Planarization of a Metal

A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Composition for polishing and composition for rinsing

A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass.

PROCESS FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a process for producing a polishing liquid composition with which it is possible to give a polished work that has a reduced surface roughness and a reduced amount of particles. The process for producing a polishing liquid composition involves a step in which a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1-100 nm is filtered through a filter including a filter aid, the filter aid having an average pore diameter, as measured by the mercury intrusion method, of 0.1-3.5 μm. 1. A process for producing a polishing liquid composition , comprising the step of filtering a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1 to 100 nm with a filter including a filter aid , wherein the filter aid has an average pore diameter , as measured by a mercury intrusion method , of 0.1 to 3.5 μm.2. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid is diatomaceous earth.3. A process for producing a polishing liquid composition according to claim 1 , wherein an integrated pore volume of 0.5 μm or less of the filter aid claim 1 , as measured by the mercury intrusion method claim 1 , is 2.5 mL/g or more.4. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid has a BET specific surface area of 4.0 m/g or more and an integrated pore volume of 0.15 μm or less claim 1 , as measured by a nitrogen adsorption method claim 1 , of 0.3 mL/g or more.5. A process for producing a polishing liquid composition according to claim 1 , wherein a water permeability of the filter aid obtained by filtering water with the filter aid under a condition of 0.015 MPa is 5.0×10mor less.6. A process for producing a polishing liquid composition according to claim 1 , comprising the following Steps 1 and 2:{'sup': '4', 'Step 1) filtering a raw silica dispersion containing colloidal silica having an average ...

Chemical mechanical polishing (cmp) composition comprising a specific heteropolyacid

A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c−6y−5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Slurry for planarizing photoresist

A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

Shaped abrasive particle and method of forming same

A method of forming a mixture including a ceramic material into a sheet, sectioning at least a portion of the sheet using a mechanical object and forming at least one shaped abrasive particle from the sheet, such that the at least one shaped abrasive particle can have a two-dimensional shape as viewed in a plane defined by a length and a width of the shaped abrasive particle selected from the group consisting of polygons, ellipsoids, numerals, Greek alphabet characters, Latin alphabet characters, Russian alphabet characters, complex shapes having a combination of polygonal shapes, and a combination thereof.

Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts

An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N′-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

POLISHING COMPOSITION

A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F≧350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater. 1. A polishing composition comprising colloidal silica , whereinwhen “A” denotes an average aspect ratio (dimensionless) of the colloidal silica; “D” denotes an average particle diameter (units: nm) of the colloidal silica; “E” denotes a standard deviation of the particle diameter (units: nm) of the colloidal silica; and “F” denotes a volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica, a value obtained by the expression A×D×E×F is 350,000 or greater, andthe volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater.2. The polishing composition according to claim 1 , wherein when “B” denotes a standard deviation (dimensionless) of the aspect ratio of the colloidal silica claim 1 , a value obtained by the expression A×B×D×E×F is 30 claim 1 ,000 or greater.3. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of 50 nm or greater and an aspect ratio of 1.2 or greater in the colloidal silica is 50% or greater.4. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of greater than 300 nm in the colloidal silica is less than 2%. The present invention relates to a polishing composition used mainly in polishing an object-to-be-polished, such as semiconductor wafers including silicon wafers, ...

Low free formaldehyde phenolic resins for abrasive products

The present invention provides process for the manufacture of an aqueous resin composition comprising a phenolic formaldehyde (PF) resin, which process comprises the steps of: providing a formaldehyde and phenolic compound, reacting said compounds in a condensation reaction in the presence of a catalyst, after completion of the condensation reaction to react with free formaldehyde, determining the free formaldehyde content of the resin composition, adding a pre-calculated substantially stoichiometric amount of modifying compound containing a primary amine group to reduce the amount of free formaldehyde in the resin composition to less than 0.1 wt % (relative to the total weight of the aqueous resin composition), and optionally distillation of the reaction product.

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon. 1. A chemical-mechanical polishing composition consisting essentially of:(a) a ceria abrasive,(b) one or more nonionic polymers selected from the group consisting of polyalkylene glycols, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and mixtures thereof,(c) one or more nitrogen-containing zwitterionic compounds,(d) optionally one or more phosphonic acids,(e) optionally one or more sulfonic acid copolymers,(f) optionally one or more anionic copolymers,(g) optionally one or more polymers comprising quaternary amines,(h) optionally one or more compounds that adjust the pH of the polishing composition, and(i) water.2. The polishing composition of claim 1 , wherein the ceria abrasive is a wet-process ceria.3. The polishing composition of claim 2 , wherein the wet process ceria is present in an amount of about 0.1 wt. % to about 10 wt. % of the polishing composition.4. The polishing composition of claim 1 , wherein the one or more nonionic polymers is present in an amount of about 1 ppm to about 3 claim 1 ,000 ppm of the polishing ...

AQUEOUS FLOOR POLISHING COMPOSITION

The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. Rand Rrepresent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. 2. The aqueous floor polishing composition described in claim 1 , wherein m is 2 in the above general formula (1).3. The aqueous floor polishing composition described in claim 1 , wherein n is a number from 4 to 20 in the above general formula (1).4. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare each independently alkyl groups having 2 to 14 carbon atoms in the above general formula (1).5. The aqueous floor polishing composition described in claim 1 , wherein Rand Rare both 2-ethylhexyl groups in the above general formula (1).6. The aqueous floor polishing composition described in wherein the content of the above polyoxyalkylene diester compound is from 0.5 to 20 mass % relative to the total solid content. The present invention relates to an aqueous floor polishing composition, and further specifically, relates to the aqueous floor polishing composition which has excellent surface smoothing properties (hereafter, also called as leveling properties), lustering properties and abrasion resistance (hereafter, also called as heel mark resistance properties), but does not contain an elemental phosphorus-containing plasticizer and does not negatively affect the environment. In this regard, “aqueous” means a concept comprised of an emulsion type, a dispersion type, a suspension type and a water solution type which use water as a solvent.Conventionally, with the purpose of protecting the floor surface and improving the beauty of the same, a floor polishing agent (hereafter, also called as a floor polish) has been applied to the floor surface of buildings so that ...

Polishing liquid and method for polishing substrate using the polishing liquid

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO 3 M group and —PO 3 M 2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME

Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. 1. A polishing composition comprising:abrasive grains;at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms;at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts; andwater, whereinthe abrasive grains have an average primary particle diameter of 5 to 50 nm, andthe alcohol compound is contained in the polishing composition in an amount of 0.01 to 1% by mass.2. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of hydroxides of quaternary ammonium claim 1 , carbonates of quaternary ammonium claim 1 , bicarbonates of quaternary ammonium claim 1 , hydroxides of alkali metals claim 1 , carbonates of alkali metals claim 1 , and bicarbonates of alkali metals.3. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of tetramethylammonium hydroxide claim 1 , tetramethylammonium carbonate claim 1 , tetramethylammonium bicarbonate claim 1 , potassium hydroxide claim 1 , potassium carbonate claim 1 , and potassium bicarbonate.4. The polishing composition according to claim 1 , wherein the abrasive ...

Method of manufacturing semiconductor device

According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY

The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability. 1. A contact release capsule comprising a particle , a chemical payload , and a polymer coating , wherein:the particle comprises a pore or pores which can be impregnated with a chemical payload,the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle,when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment.2. The contact release capsule of claim 1 , wherein the particle is selected from the group consisting of fumed or colloidal silica claim 1 , fumed or colloidal alumina claim 1 , ceria claim 1 , MnO claim 1 , ZnO claim 1 , TiO claim 1 , any polymer material claim 1 , and/or combinations thereof.3. The contact release capsule of claim 1 , wherein the particle is spherical.4. The contact release capsule of claim 3 , wherein the size of the particle is in the range of about 10 nm to ...

METHOD FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a method for producing a polishing composition capable of reducing scratches and particles of an object to be polished, after polishing. It is a method for producing a polishing composition including a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm, wherein the filtration filter includes diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule. 1. A method for producing a polishing composition , the method comprising a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm ,wherein the filtration filter comprises diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule.2. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound is polyalkyleneimine.3. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound has a number average molecular weight in a range of 400 to 9000.4. The method for producing a polishing composition according to claim 1 , wherein an average pore diameter of the diatomite obtained by a mercury intrusion method is 0.1 to 3.5 μm.5. The method for producing a polishing composition according to claim 1 , wherein an integrated pore volume of not larger than 0.15 μm of the diatomite obtained by a nitrogen adsorption method is not less than 0.3 mL/g.6. The method for producing a polishing composition according to claim 1 , wherein the diatomite has a BET specific surface area of not less than 4.0 m/g.7. The method for producing a polishing composition according to claim 1 , comprising a step of producing a filtration filter comprising the cationized diatomite.89-. (canceled)10. ...

Combination, Method, and Composition for Chemical Mechanical Planarization of a Tungsten-Containing Substrate

A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

CMP SLURRY REGENERATION APPARATUS AND METHOD

The CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit comprises a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation; a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry ; a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; and a regenerated slurry container for regenerating the small amount metal ion from the rinsed components. 1. A CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit , the CMP slurry regeneration apparatus comprising:a. a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation;b. a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry;c. a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; andd. a regenerated slurry container for regenerating the small amount metal ion from the rinsed components.2. The apparatus of claim 1 , wherein the metal conductive elements comprise tungsten.3. The apparatus of claim 1 , wherein the solids comprise the hydroxide of the small amount metal ion.4. The apparatus of claim 1 , wherein the soluble and solid components comprise a tungsten element and an iron element.5. The apparatus of claim 1 , wherein ...

Hollow Polymeric-Alkaline Earth Metal Oxide Composite

The invention provides a plurality of polymeric particles embedded with alkaline-earth metal oxide. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell has an outer surface and a diameter of 5 μm to 200 μm with the outer surface of the shell of the gas-filled polymeric particles having alkaline-earth metal oxide-containing particles embedded in the polymer. The alkaline-earth metal oxide-containing particles have an average particle size of 0.01 to 3 μm distributed within each of the polymeric microelements to coat less than 50 percent of the outer surface of the polymeric microelements.

POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD

Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications. 1. A polishing composition comprising a composition (A) and at least one selected from an organic acid and an organic salt , whereinthe composition (A) contains hydroxyethyl cellulose, ammonia, abrasive grains, and water, andthe electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A).2. The polishing composition according to claim 1 , further comprising a surfactant.3. A method for polishing a substrate surface by using the polishing composition according to .4. A method for manufacturing a substrate claim 3 , comprising a step for polishing a substrate surface by using the method according to .5. A method for polishing a substrate surface by using the polishing composition according to .6. A method for manufacturing a substrate claim 5 , comprising a step for polishing a substrate surface by using the method according to . The present invention relates to a polishing composition for use in polishing a substrate, a method for polishing a substrate by using the polishing composition, and a method for producing a substrate.In semiconductor devices such as ULSIs (Ultra Large Scale Integrations) used in computers, movement to smaller design rules in order to realize higher integration and higher operation speed has been accelerated year by year. With this tendency, there are an increased number of cases where small defects on the surface of a substrate used in a semiconductor device have an adverse effect on the performance of the semiconductor device. Accordingly, overcoming nano- ...

POLISHING COMPOSITION

Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m/g or less. It is preferable for the aluminum oxide abrasive grains to have an average secondary particle size of 0.1 μm or more and 20 μm or less. The polishing composition is used for polishing hard and brittle materials having a Vickers hardness of 1,500 Hv or higher, such as sapphire, silicon carbide, and gallium nitride. 1. A polishing composition used for polishing a hard and brittle material having a Vickers hardness of 1 ,500 Hv or higher , comprising at least aluminum oxide abrasive grains and water , wherein the polishing composition has a pH of 8.5 or higher , and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.2. The polishing composition according to claim 1 , wherein the aluminum oxide abrasive grains have an average secondary particle size of 0.1 μm or more and 20 μm or less.3. The polishing composition according to claim 1 , wherein the hard and brittle material is sapphire claim 1 , silicon carbide claim 1 , or gallium nitride.4. A polishing method comprising:providing a hard and brittle material; and{'sup': '2', 'polishing the hard and brittle material with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 or higher, and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.'}5. A method for producing a polished substrate composed of a hard and brittle material claim 1 , comprising:providing a substrate composed of a hard and brittle material; and{'sup': '2', 'polishing the substrate with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 ...

COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM

The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof. 1. An aqueous chemical-mechanical polishing (CMP) composition for polishing a molybdenum-containing substrate , the composition comprising an aqueous carrier having a pH in the range of about 3 to about 6 and containing , at point of use:(a) a particulate abrasive selected from the group consisting of a silica abrasive and an alumina abrasive;(b) a water soluble surface active material; and(c) an oxidizing agent;wherein the surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.2. The CMP composition of wherein the particulate abrasive comprises alpha-alumina and the surface active agent is a cationic material.3. The CMP composition of wherein the cationic material is a cationic polymer.4. The CMP composition of wherein the cationic polymer comprises a poly(methacryloxyethyltrimethylammonium) halide.5. The CMP composition of wherein oxidizing agent comprises hydrogen peroxide.6. The CMP ...

Polishing composition, method for fabricating thereof and method of chemical mechanical polishing using the same

Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

POLISHING SLURRY AND POLISHING METHOD THEREOF

The present invention provides a polishing technique capable of polishing, at a high speed, a substrate containing Al and having high hardness, such as single-crystal sapphire substrate, and capable of providing a polished surface of high accuracy. The present invention relates to a polishing slurry for polishing a substrate containing aluminum, comprising abrasive grains, an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g—HO or more, and water. In the present invention, it is preferable that the content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry. 1. A polishing slurry for polishing a substrate containing aluminum , comprising abrasive grains , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more , and water.2. The polishing slurry according to claim 1 , wherein a content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry.3. The polishing slurry according to claim 1 , wherein the aluminum contained in the substrate is aluminum oxide.4. A polishing method claim 1 , comprising polishing a substrate containing aluminum by using a polishing slurry composed of abrasive grains claim 1 , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more claim 1 , and water.5. The polishing slurry according to claim 2 , wherein the aluminum contained in the substrate is aluminum oxide. 1. Field of the InventionThe present invention relates to a polishing slurry containing an inorganic boron compound, and particularly to a polishing slurry suitable for polishing a substrate containing Al.2. Description of the Related ArtIt is known that substrates such as single-crystal sapphire substrates containing aluminum (hereinafter may be referred to as Al) have very high hardness and therefore cannot be polished at high polishing rates (for example, ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O) (OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO—), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium. 1. A chemical-mechanical polishing (CMP) composition comprising(A) inorganic particles, organic particles, or a composite or mixture thereof,(B) a polymeric polyamine or a salt thereof comprising a pendant group (Y) which comprises a moiety (Z),{'sup': 1', '2', '3', '4', '5', '6', '7, 'sub': 3', '3', '3', '3', '2', '2, 'wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O)(OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or a deprotonated form thereof,'}{'sup': '1', 'Ris alkyl, aryl, alkylaryl, or arylalkyl'}{'sup': '2', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '3', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '4', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '5', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '6', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '7', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and'}(C) an aqueous medium.2. The CMP composition of claim 1 , ...

CHEMICAL MECHANICAL POLISHING SLURRY

A chemical mechanical polishing (CMP) slurry used for phase change memory, characterized by comprising polishing particles, oxidizing agents, chelating agents, inhibiting agents, surface active agents, pH adjusting agents/buffering agents and aqueous medium. Compared with the prior art, the present invention provides a chemical mechanical polishing slurry, by which the controllable selectivity of phase change material/bottom dielectric material (1:1 to 180:1) can be achieved and the phase change properties of phase change materials can be maintained after polishing with the polished surface smooth and free from scratch, meeting process requirements of phase change memory. 1. A chemical mechanical polishing slurry used for phase change memory , characterized by comprising polishing particles , oxidizing agents , chelating agents , inhibiting agents , surface active agents , pH adjusting agents/buffering agents and aqueous medium.2. The chemical mechanical polishing slurry according to claim 1 , characterized in that claim 1 , based on the total weight of chemical mechanical polishing slurry claim 1 , the content of said polishing particles is 0.1 wt % to 30 wt % claim 1 , the content of said oxidizing agents is 0.01 wt % to 10 wt % claim 1 , the content of said chelating agents is 0.01 wt % to 5 wt % claim 1 , the content of said inhibiting agents is 0.0001 wt % to 5 wt % claim 1 , and the content of said surface active agents is 0.001 wt % to 2 wt %.3. The chemical mechanical polishing slurry according to claim 2 , characterized in that the content of said polishing particles is 0.5 wt % to 5 wt % claim 2 , the content of said oxidizing agents is 0.1 wt % to 5 wt % claim 2 , the content of said chelating agents is 0.05 wt % to 2 wt % claim 2 , the content of said inhibiting agents is 0.001 wt % to 1 wt % claim 2 , and the content of said surface active agents is 0.001 wt % to 1 wt %.4. The chemical mechanical polishing slurry according to claim 1 , characterized in ...

CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. 18-. (canceled)9. A chemical mechanical polishing aqueous dispersion comprising:(A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000, a molecule of the first water-soluble polymer comprising a heterocyclic ring;(B) a second water-soluble polymer or a salt of the second water-soluble polymer having a weight average molecular weight of 1000 to 10,000 and comprising one group selected from a carboxyl group and a sulfonic group;(C) an oxidizing agent; and(D) abrasive grains,the chemical mechanical polishing aqueous dispersion having a pH of 7 to 12.10. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a mass ratio (A)/(B) of the first water-soluble polymer (A) and the second water-soluble polymer (B) is 0.02 to 50.11. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the first water-soluble polymer (A) has a viscosity of 50 to 150 mPa·s.12. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the second water-soluble polymer (B) has a viscosity of 1 to 5 mPa·s.13. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein the first water-soluble polymer (A) is a copolymer having at least one structural unit derived from a compound selected from vinylpyridine, vinylpyrrolidone, and vinylimidazole.14. The chemical mechanical polishing aqueous dispersion as defined in ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND A CARBONATE SALT

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped;a non-ionic surfactant;a carbonate or hydrogen carbonate salt;an alcohol; andan aqueous medium.2. The CMP composition according to claim 1 ,wherein the alcohol is an alcohol having at least two hydroxyl groups which are not dissociable in the aqueous medium.3. The CMP composition according to claim 1 , further comprising:an oxidizing agent.4. The CMP composition according to claim 1 , further comprising:a corrosion inhibitor.5. The CMP composition according to claim 1 , further comprising:a chelating agent.6. The CMP composition according to claim 1 ,wherein the particles are cocoon-shaped silica particles.7. The CMP composition according to claim 1 ,wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.8. The CMP composition according to claim 1 ,wherein the carbonate salt is an alkali carbonate or an alkali hydrogen carbonate.9. The CMP composition according to claim 1 , further comprising:an inorganic or organic acid as chelating agent.10. The CMP composition according to claim 1 , wherein a pH value of the CMP composition is of from 8 to 12.11. The CMP composition according to claim 1 , comprises:cocoon-shaped silica particles;an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group;an alkali carbonate or an alkali hydrogen carbonate;an alcohol having at least two hydroxyl groups which are not dissociable in an aqueous medium;an oxidizing agent;a corrosion inhibitor;a chelating agent; andan aqueous medium.12. A process for manufacturing a semiconductor device claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'chemical mechanical polishing a substrate used in the semiconductor industry in presence of the CMP composition according to ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND AN AROMATIC COMPOUND COMPRISING AT LEAST ONE ACID GROUP

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof,a non-ionic surfactant,an aromatic compound comprising at least one acid group (Y), or a salt thereof, andan aqueous medium,wherein particles are cocoon-shaped.2. The CMP composition according to claim 1 , wherein the aromatic compoundcomprises per aromatic ring at least two acid groups, orcomprises per aromatic ring at least one acid group and at least one further functional group different from the at least one acid group.3. The CMP composition according to claim 1 , wherein the aromatic compound comprises a benzene ring and claim 1 , per benzene ring claim 1 , at least one carboxylic acid group or a deprotonated form thereof.4. The CMP composition according to claim 1 , wherein the aromatic compound is a benzenecarboxylic acid comprising at least two carboxylic acid groups claim 1 , or salts thereof.5. The CMP composition according to claim 1 , wherein the CMP composition further comprises an oxidizing agent.6. The CMP composition according to claim 1 , wherein the CMP composition further comprises an alcohol.7. The CMP composition according to claim 1 , wherein the CMP composition further comprises a corrosion inhibitor.8. The CMP composition according to claim 1 , wherein the particles are silica particles.9. The CMP composition according to claim 1 , wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.10. The CMP composition according to claim 1 , wherein a pH value of the composition is from 8 to 12.11. The CMP composition according to claim 1 , wherein the CMP composition comprisescocoon-shaped silica particles,an amphiphilic non-ionic surfactant containing a polyoxyalkylene group,a benzenecarboxylic acid comprising at least two carboxylic groups (—COOH), or a salt thereof,an alcohol having at least two ...

High Purity Silica Sol and its Production Method

A method for producing a high purity silica sol is provided. This method has enabled use of water glass for the starting material, and the resulting silica sol has a reduced metal impurity Cu and Ni content compared to conventional methods. The method comprises (1) ultrafiltration of an aqueous solution of an alkali silicate; (2) ion exchange process for removal of at least a part of cationic components in the purified aqueous solution of an alkali silicate; (3) another ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and (4) adjustment of a part of the high purity silicate solution (seed solution) to alkaline pH and mixing of this solution with another part of the solution (feed solution) to produce a high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb. 1. A method for producing a high purity silica sol comprising the steps of(1) conducting ultrafiltration of an aqueous solution of an alkali silicate (a) to obtain purified aqueous solution of the alkali silicate (b);(2) subjecting the purified aqueous solution of the alkali silicate (b) to an ion exchange process to remove at least a part of cationic components in the purified aqueous solution of the alkali silicate (b) to obtain purified silicate solution;(3) subjecting the purified silicate solution to an ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and(4) adjusting a part of the high purity silicate solution (seed solution) to alkaline pH and mixing this solution with another part of the high purity silicate solution (feed solution) to produce the high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb.2. A method for producing a high purity silica sol according to further comprising the step of adding an oxidizing agent to at least one member selected from the group consisting of ...

SURFACE CLEANING ARTICLE AND PROCESS FOR MAKING THE SAME

An inventive composition that has utility as an article for cleaning a target surface is provided. Embodiments of the inventive composition are readily applied to a substrate to form a cleaning article or form a free-standing article; the composition upon drying forms a matrix having a coefficient of friction of greater than one, and a glass transition temperature that is between 0° C. and 40° C. The matrix is amenable to loading with various additives illustratively including re-enforcing fibers, abrasives, plasticizers, foaming agents, fragrances, and combinations thereof. Embodiments of the inventive composition operate to clean a substrate such as a vehicle and ideally return the same to the original look and feel without requiring excessive work, or requiring the removal of too much material from the surface. 1. A surface polishing article comprising: a thermoplastic polymer with a glass transition temperature that is between 0° C. and 40° C.2. The article of further comprising an abrasive having an abrasive average particle size of less than 25 microns.3. The article of claim 2 , wherein the abrasive average particle size is less than 10 microns.4. The article of where said abrasive has an abrasive volume greater than a volume of said polymer.5. (canceled)6. (canceled)7. The article of further comprising a substrate to which said polymer is adhered.8. The article of where said substrate is chosen from one of: a towel claim 7 , a sponge claim 7 , or a foam pad.9. (canceled)10. An article for cleaning a target surface comprising: a substrate deformable to a contour of the surface claim 7 , a coating on said substrate claim 7 , said coating having an exposed face claim 7 , said coating comprising: a matrix formed of a thermoplastic elastomer with coefficient of friction of greater than one claim 7 , and a glass transition temperature that is between 0° C. and 40° C.11. The article of wherein said substrate is an open-celled or close-celled foam.12. (canceled)13. ...

POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. 1. A polishing composition that does not contain abrasives and that is used for polishing a silicon wafer , the polishing composition comprising:a polishing accelerator including an amine compound or an inorganic alkaline compound;a water-soluble polymer; anda block-type compound in which an oxyethylene group and an oxypropylene group are included in a block-type polyether.2. The polishing composition according to claim 1 , further comprising:a pH buffer including a carbonate and a hydrogencarbonate.3. A polishing method for polishing a silicon wafer using the polishing composition according to . The present invention relates to a polishing composition for polishing a silicon wafer, and a polishing method using the same.Conventionally, multi-stage polishing has been performed generally in the polishing of a silicon wafer. More specifically, the following multi-stage polishing has been performed: a silicon wafer is flattened in the primary polishing, and the surface of the silicon wafer is finished more finely in the secondary polishing and subsequent stages.In the primary polishing, a high polishing rate is required and flatness of a silicon wafer is demanded. The conventional polishing composition for the primary polishing contains abrasives in order to improve the polishing rate. As the abrasives, nanometer-order colloidal particles or the like are used.In recent years, as the required accuracy regarding wafer quality increases, the prevention and countermeasure to scratches and LPDs (light point defects) come to be needed in the primary polishing as well.The mechanical polishing with a polishing ...

PROCESS FOR PREPARING AQUEOUS COLLOIDAL SILICA SOLS OF HIGH PURITY FROM ALKALI METAL SILICATE SOLUTIONS

The present invention relates to a process for preparing aqueous colloidal silica sols of high purity from silicate solutions, to aqueous colloidal silica sols with a specific profile of impurities, and to the use thereof. The invention further encompasses high-purity aqueous silica obtained as an intermediate in the course of the purification process, high-purity silicon dioxide obtainable by dewatering, and the use thereof. 1. A process for preparing an aqueous colloidal silica sol , the process comprising the following steps:a. Preparing an aqueous solution of a water-soluble alkali metal silicate with a pH of less than 2 by mixing a water-soluble alkali metal silicate or an aqueous alkali metal silicate solution with an acidifier;b. Contacting the acidic alkali metal silicate solution obtained in process step a) with a basic anion exchange resin of the hydroxyl type and an acidic cation exchange resin of the hydrogen type in any sequence, the anion exchange resin and the cation exchange resin being used in spatial separation or in a mixture; andc. Forming a stable colloidal silica sol by establishing a temperature, concentration and pH suitable for nucleation and particle growth in the aqueous silica solution obtained from step b).2. The process for preparing an aqueous colloidal silica sol according to claim 1 , wherein the acidic alkali metal silicate solution prepared in step a) claim 1 , in an additional process step claim 1 , a1) claim 1 , before performance of step b) claim 1 , is contacted with a resin containing chelate-forming functional groups with binding affinity to divalent or higher-valency metal ions.3. The process for preparing an aqueous colloidal silica sol according to claim 1 , wherein the acidic alkali metal silicate solution obtained from process step a) is aged at a temperature in the range from 10 to 100° C. for a period of 0 to 48 h.4. The process for preparing an aqueous colloidal silica sol according to claim 2 , wherein the resin used ...

CMP POLISHING FLUID, METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING COMPOSITE PARTICLE, AND METHOD FOR POLISHING BASE MATERIAL

A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5. 1. A CMP polishing liquid comprising:water; andan abrasive particle, whereinthe abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core,the first particle contains silica,the second particle contains cerium hydroxide, andpH of the CMP polishing liquid is equal to or lower than 9.5.2. The CMP polishing liquid according to used for polishing a surface to be polished that contains silicon oxide.3. A method for polishing a base material claim 1 , comprising a step of polishing a surface to be polished of a base material by using the CMP polishing liquid according to .4. A method for manufacturing a CMP polishing liquid containing water and an abrasive particle claim 1 , the method comprisinga step of, in an aqueous solution that contains a first particle containing silica, a first component containing a precursor of cerium hydroxide, and a second component that is capable of reacting with the precursor to precipitate a second particle containing cerium hydroxide, precipitating the second particle by reacting the precursor and the second component to obtain a composite particle having a core including the first particle, and the second particle provided on the core, whereinthe abrasive particle comprises the composite particle, and pH of the CMP polishing liquid is equal to or lower than 9.5.5. The method for manufacturing a CMP polishing liquid according to claim 4 , wherein the composite particle is obtained by mixing a liquid containing the first particle and the first component with a liquid containing the second component.6. The ...

Abrasive and polishing composition

Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass. The abrasive contains zirconium oxide particles. The zirconium oxide particles have a specific surface area of from 1 to 15 m 2 /g. The zirconium oxide particles preferably have a purity of no less than 99% by mass. The polishing composition is used in, for example, polishing a hard and brittle material, such as sapphire, silicon nitride, silicon carbide, silicon oxide, glass, gallium nitride, gallium arsenide, indium arsenide, and indium phosphide.

Methods of polishing sapphire surfaces

Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.

COMPOSITIONS COMPRISING A FLUOROSURFACTANT AND A FLUORO-FREE HYDROTROPE

Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives. 1. A composition comprising a fluorosurfactant and a fluoro-free hydrotrope , wherein the weight ratio of the fluorosurfactant to the fluoro-free hydrotrope is in the range of 1:10 to 10:1.2. The composition of claim 1 , wherein the concentration of the fluorosurfactant is 0.00005-2 wt %.4. The composition of claim 1 , wherein the fluorosurfactant is an anionic claim 1 , a cationic claim 1 , an amphoteric claim 1 , or a nonionic fluorosurfactant.5. A method of altering the surface behavior of an agent claim 1 , comprising adding to the agent a composition comprising a fluorosurfactant and a fluoro-free hydrotrope claim 1 , wherein the weight ratio of the fluorosurfactant to the fluoro-free hydrotrope is in the range of 1:10 to 10:1.6. The composition of claim 5 , wherein the concentration of the fluorosurfactant is 0.00005-2 wt %.8. The method of claim 5 , wherein the fluorosurfactant is an anionic claim 5 , a cationic claim 5 , an amphoteric claim 5 , or a nonionic fluorosurfactant.9. The method of claim 5 , wherein the agent is selected from the group consisting of coating compositions claim 5 , lattices claim 5 , polymers claim 5 , floor finishes claim 5 , inks claim 5 , emulsifying agents claim 5 , foaming agents claim 5 , release agents claim 5 , repellency agents claim 5 , flow modifiers claim 5 , film evaporation inhibitors claim 5 , wetting agents claim 5 , leveling agents claim 5 , penetrating agents claim 5 , cleaners claim 5 , grinding agents claim 5 , electroplating agents claim 5 , corrosion inhibitors claim 5 , etchant solutions claim 5 , soldering agents claim 5 , dispersion aids claim 5 , antimicrobial agents claim 5 , pulping aids claim 5 , rinsing aids claim 5 , polishing agents claim 5 , personal care compositions claim 5 , drying agents ...

POLISHING AGENT AND POLISHING METHOD

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20. 1. A polishing agent for chemically and mechanically polishing a non-oxide single-crystal substrate , the polishing agent comprising:an oxidant having redox potential of 0.5 V or more and containing a transition metal;silicon oxide particles and cerium oxide particles; anda dispersion medium,wherein a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.2. The polishing agent according to claim 1 ,wherein the oxidant is permanganate ion.3. The polishing agent according to claim 2 ,wherein a content of permanganate ion is 0.015 mass % or more and 5 mass % or less.4. The polishing agent according to claim 1 ,wherein a content of the cerium oxide particles is 0.05 mass % or more and 15 mass % or less.5. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the cerium oxide particles is 0.5 μm or less.6. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the silicon oxide particles is 0.5 μm or less.7. The polishing agent according to claim 1 ,wherein the silicon oxide particle is colloidal silica.8. The polishing agent according to claim 1 ,wherein pH is 11 or less.9. The polishing agent according to claim 8 ,wherein pH is 5 or less.10. The polishing agent according to claim 1 ,wherein the non-oxide single-crystal substrate is a silicon carbide (SiC) single-crystal substrate or a gallium nitride (GaN) single-crystal substrate.11. A polishing method comprising:{'claim-ref': {'@idref': ' ...

Polishing composition

A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm 2 of surface area of the abrasive grains. Examples of this water-soluble polymer include nonionic compounds having a polyoxyalkylene chain.

Chemical Mechanical Polishing Composition Having Chemical Additives and Methods for Using Same

Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiC x N y ” films; and tunable removal selectivity for “SiC” in reference to SiO 2 , “SiN” in reference to SiO 2 , “SiC” in reference to “SiN”, or “SiC x N y ” in reference to SiO 2 ; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.

POLISHING LIQUID COMPOSITION FOR SILICON OXIDE FILM

Provided is a polishing liquid composition that is able to improve the polishing rate of a silicon oxide film in one aspect. 1. A polishing liquid composition for a silicon oxide film comprising:cerium oxide particles (component A);an additive (component B); andan aqueous medium,wherein the component B is a compound having a reduction potential of 0.45 V or more when a 10 ppm aqueous solution of the component B is measured by cyclic voltammetry (with an Ag/AgCl electrode as a reference).2. The polishing liquid composition according to claim 1 , wherein an oxidation potential of the component B is not detected when a 10 ppm aqueous solution of the component B is measured by cyclic voltammetry (with an Ag/AgCl electrode as a reference).3. The polishing liquid composition according to claim 1 , wherein the component B is a reducing compound containing a heteroaromatic ring skeleton.4. The polishing liquid composition according to claim 1 , wherein the component B is an N-oxide compound containing a nitrogen-containing heteroaromatic ring skeleton in which at least one hydrogen atom is substituted with a hydroxyl group claim 1 , or a salt of the N-oxide compound (component B1).5. The polishing liquid composition according to claim 4 , wherein the component B1 is at least one selected from an N-oxide compound having a pyridine ring in which at least one hydrogen atom is substituted with a hydroxyl group claim 4 , an N-oxide compound having a quinoline ring in which at least one hydrogen atom is substituted with a hydroxyl group claim 4 , or salts of these N-oxide compounds.6. The polishing liquid composition according to claim 1 , wherein the component B is an N-oxide compound containing a nitrogen-containing heteroaromatic ring skeleton in which at least one hydrogen atom is substituted with a thiol group claim 1 , or a salt of the N-oxide compound (component B2).7. The polishing liquid composition according to claim 6 , wherein the component B2 is at least one selected ...

Polishing composition and method for producing polished article

This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

NANO-DIAMOND DISPERSION SOLUTION AND METHOD FOR PREPARING SAME

The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates. 2. The nano-diamond dispersion of claim 1 , wherein the nano-diamond particles have an average particle diameter of from about 9 nm to about 90 nm.3. The nano-diamond dispersion of claim 1 , wherein the nano-diamond particles include a metal ion and a functional group chemically bonded to a surface thereof.4. The nano-diamond dispersion of claim 1 , wherein the nano-diamond particles further comprise a metal hydroxide adsorbed on a surface thereof.5. The nano-diamond dispersion of claim 1 , wherein the dispersion solvent comprises at least one of water claim 1 , distilled water claim 1 , alcohol claim 1 , oil claim 1 , an organic solvent claim 1 , hydrogen peroxide claim 1 , ammonia water claim 1 , toluene claim 1 , xylene claim 1 , ethylene glycol claim 1 , methylethylketone (MEK) claim 1 , and n-methyl pyrrolidone (NMP).6. A sealing agent comprising a nano-diamond dispersion of .7. The sealing agent of claim 6 , wherein the nano-diamond particles have an average particle diameter of from about 9 nm to about 90 nm.8. The sealing agent of claim 6 , wherein the nano-diamond particles include a metal ion and a functional group chemically bonded to a surface thereof.9. The sealing agent of claim 6 , wherein the nano-diamond particles further comprise a metal hydroxide adsorbed on a surface thereof.10. A polishing agent comprising a nano-diamond dispersion of .11. An oil additive comprising a nano-diamond ...

POLISHING COMPOSITION

Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. 1. A polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane , the polishing composition comprising:colloidal silica particles and water,{'sup': '2', 'wherein a value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.'}2. The polishing composition according to claim 1 , wherein the value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles claim 1 , that is claim 1 , (specific surface area/number average particle diameter) is 0.5 or more and 2.0 or less.3. The polishing composition according to claim 1 , wherein claim 1 , when a particle size at a 3% accumulation point from smaller particle size is denoted as Dand a particle size at a 97% accumulation point from smaller particle size is denoted as Din a cumulative number distribution of the colloidal silica particles claim 1 , a value obtained by dividing Dby D claim 1 , that is claim 1 , (D/D) is 2.0 or more.4. The polishing composition according to claim 1 , wherein an aspect ratio of the colloidal silica particles is 1.10 or more.5. The polishing composition according to claim 1 , wherein a pH value is 5 or more and 11 or less.6. A polishing method of polishing a sapphire substrate having a non-polar plane or a semi-polar plane by using the polishing composition according to .7. A method for manufacturing a sapphire substrate claim 6 , the method comprising a step of performing polishing by the polishing method according to . The present invention relates to a ...

ABRASIVE PARTICLES, POLISHING SLURRY AND METHOD OF FABRICATING ABRASIVE PARTICLES

The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and_forming a precipitate, and washing abrasive particles synthesized by precipitation. 1. A method of fabricating abrasive particles , the method comprising:preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor;preparing a basic solution;mixing the basic solution with the precursor solution and forming a precipitate; andwashing abrasive particles synthesized by precipitation.2. The method of claim 1 , wherein the first precursor comprises an organic salt containing a cerium (III) claim 1 , and the second precursor comprises an inorganic salt containing the cerium (III).3. The method of claim 2 , wherein the second precursor comprises a halogen group element.4. The method of claim 1 , wherein preparing the precursor solution comprises:mixing the first precursor with water to prepare a first precursor solution;mixing the second precursor with water to prepare a second precursor solution; andmixing the first precursor solution with the second precursor solution.5. The method of claim 4 , wherein the first precursor solution is a solution having a pH value lower than that of the second precursor solution.6. The method of claim 4 , wherein preparing the precursor solution further comprises adding an acidic material to the second precursor solution prior to mixing the first precursor solution with the second precursor solution.7. The method of claim 4 , wherein mixing the first precursor solution with the second precursor solution ...

METHODS AND PRODUCT FOR FORMING LINES UTILIZING LIQUID ACRYLIC COPOLYMER SOLUTION

A liquid water-based solution for application of temporary floor markings on a polyurethane coated floor and a method of applying the same is disclosed. According to one aspect, the solution comprises 5-15% by weight of an acrylic copolymer, 1%-2% propylene glycol, 0.5%-2% dipropylene glycol mono-methyl-ether, 2-8% of titanium dioxide; and 1-5% of ethelyne glycol. The solution is dispensable through a foam applicator so that it can be used to form temporary lines for recreational and athletic activities. The solution has a drying time when applied to the polyurethane floor of under five minutes and can remains water soluble for an extended period of time so that it can be removed without damaging the underlying surface. 1. A liquid water-based solution for application of temporary floor markings on a polyurethane coated floor , the solution comprising5-15% by weight of an acrylic copolymer,1%-2% propylene glycol,0.5%-2% dipropylene glycol mono-methyl-ether,2-8% of titanium dioxide; and1-5% of ethelyne glycol,wherein the solution is dispensable through a foam applicator, andwherein the solution has a drying time when applied to the polyurethane floor of under five minutes.2. The liquid water based solution of wherein the solution further comprises 1-5% of gum Arabic.3. The liquid water based solution of wherein the solution further comprises 1-2% of a leveling agent.4. A method of forming lines on a polyurethane coated wood surface claim 1 , the method comprising:determining a line marking plan based on a desired activity,applying a liquid water-based solution containing an acrylic copoloymer resin to the surface based on the determined line plan, wherein the water-based solution comprises 5-15% by weight of an acrylic copolymer, 1%-2% propylene glycol, 0.5%-2% dipropylene glycol mono-methyl-ether, 2-8% of titanium dioxide; and 1-5% of ethelyne glycol; andwaiting a prescribed drying time prior to commencing the activity, wherein the prescribed drying time is less ...

Additives for Barrier Chemical Mechanical Planarization

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition. 2. The polishing composition of claim 1 , wherein the inorganic silicate is a salt of silicic acid selected from the group consisting of potassium silicate claim 1 , ammonium silicate claim 1 , tetramethylammonium silicate claim 1 , tetrabutylammonium silicate claim 1 , tetraethylammonium silicate claim 1 , and combinations thereof.3. The polishing composition of claim 2 , wherein the inorganic silicate is present in an amount of from about 0.2 wt. % to about 2 wt. %.4. The polishing composition of claim 1 , wherein the high molecular weight polymer is present in an amount of from about 0.01 wt. % to about 1.0 wt. %.5. The polishing composition of claim 4 , wherein the high molecular weight polymer is present in an amount of from about 0.1 wt. % to about 0.5 wt. %.6. The polishing composition of claim 1 , wherein the abrasive is selected from the group consisting of high purity colloidal silica claim 1 , alumina claim 1 , ceria claim 1 , germania claim 1 , silica claim 1 , titania claim 1 , zirconia claim 1 , alumina dopes colloidal silica in lattices claim 1 , and mixtures thereof.7. The polishing composition of claim 1 , wherein the abrasive is present in an amount of from about 3 wt. % to about 15 wt. %.8. The polishing composition of claim 7 , wherein the abrasives is colloidal silica and the colloidal silica has a mean particle size of between 30 nm and 300 nm.9. The polishing composition of claim 8 , wherein the colloidal silica has a mean particle size of between 50 nm and 200 nm.10. The polishing composition of claim 9 , wherein the colloidal silica has a mean particle size of between 60 nm and 150 nm.11. ...

POLISHING SLURRY COMPOSTION

Provided is a polishing slurry composition including colloidal silica abrasive particles, a metal oxide monomolecular complexing agent, an oxidizer, and a pH adjusting agent, a water-soluble polymer, or both. 1. A polishing slurry composition , comprising:colloidal silica abrasive particles;a metal oxide monomolecular complexing agent;an oxidizer; anda pH adjusting agent, a water-soluble polymer, or both.2. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles are included in the slurry composition in an amount of 0.0001 parts by weight to 20 parts by weight.3. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles include particles with a single size of 10 nm to 300 nm or mixed particles with at least two different sizes of 10 nm to 300 nm.4. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles include particles with a first size of 10 nm to 150 nm and a second size of 150 nm to 300 nm.5. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent is included in the slurry composition in an amount of 0.00001 parts by weight to 10 parts by weight.6. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent is an acidic compound having 2 to 5 carbon atoms claim 1 , and includes at least one functional group selected from the group consisting of a hydroxyl group (—OH) claim 1 , a carbonyl group (C═O) claim 1 , and carboxylic acid (—COOH) claim 1 ,wherein the number of each of the at least one functional group is greater than or equal to 2.7. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent includes at least one selected from the group consisting of glyoxylic acid claim 1 , citric acid claim 1 , malic acid claim 1 , maleic acid claim 1 , malonic acid claim 1 , oxalic acid claim 1 , succinic acid claim 1 , lactic acid ...

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives. 2. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles range from 0.05 wt. % to 10 wt. % and have mean particle size ranging from 5 nm to 500 nm;the chemical additive ranges from 0.01 wt. % to 20.0% wt. % and has at least fix hydroxyl functional groups in its molecular structure; andthe composition has a pH of 3 to 10.3. The Chemical Mechanical Polishing (CMP) composition of claim 2 , wherein abrasive particles have changes of mean particle size MPS (nm) and D99 (nm)≤5.0% over shelf time of ≥30 days at a temperature ranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % of the particles fall on and under.4. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles having mean particle size ranging from 5 nm to 500 nm claim 1 , and have a concentration from 0.05 wt. % to 10 wt. %;the chemical additive has R1, R2, R3, R4 and R5 (Rs in group R1 to R5) selected from (1), and ranges from 0.05 wt. % to 5 wt. %;the composition has a pH of 3 to 10; andthe abrasive particles have changes of mean particle size MPS (nm) and D99 (nm)≤3.0% over shelf time of ≥30 days at a temperature ranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % of the particles fall on and under.6. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles having mean particle size ranging from 5 nm to 500 nm claim 1 , and have a ...

CALCIUM CARBONATE SLURRY

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %. 122-. (canceled)23. A composition comprising:a calcium carbonate slurry comprising a plurality of calcium carbonate particles suspended in a solution, wherein the solution comprises a dispersant and an anionic surfactant, wherein a concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.24. The composition of claim 23 , wherein one or both of the dispersant and the anionic surfactant reduce a zeta potential of the slurry.25. The composition of claim 23 , wherein a zeta potential of the slurry is equal to or less than about −50 mV.26. The composition of claim 23 , wherein the dispersant includes sodium polyacrylate claim 23 , sodium n-silicate claim 23 , sodium tetrapyrophosphate claim 23 , sodium hexametaphosphate claim 23 , sodium polyalluminate claim 23 , sodium tetraborate claim 23 , sodium triphosphate claim 23 , sodium citrate claim 23 , or combinations thereof.27. The composition of claim 23 , wherein the anionic surfactant includes sodium dodecyl sulfate (SDS) claim 23 , polysorbate claim 23 , octylphenol ethoxylate claim 23 , or combinations thereof.28. The composition of claim 23 , wherein a pH of the slurry is between about 8.5 and about 10.5.29. The composition of claim 23 , wherein an average diameter of the plurality of calcium carbonate particles is between about 10 nm and about 3μm.30. The composition of claim 23 , wherein less than about 5% of a total number of the calcium carbonate particles has a diameter greater than about 4 μm.31. The composition of claim 23 , wherein a concentration of the dispersant is between ...

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Polishing compositions for reduced defectivity and methods of using the same

Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

CHEMICAL MECHANICAL POLISHING METHOD FOR TUNGSTEN

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; nonionic polyacrylamide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive having a negative zeta potential; and, optionally, a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten is inhibited as well as erosion of dielectrics underlying the tungsten. 18-. (canceled)9. A composition for chemical mechanical polishing tungsten consisting of , as initial components: an oxidizing agent;', 'nonionic polyacrylamide', 'a colloidal silica abrasive having a negative zeta potential;', 'a dicarboxylic acid, salt thereof or mixtures thereof,', 'a source of iron (III) ions; and,', 'optionally, a pH adjusting agent., 'water;'}10. The composition of claim 9 , wherein the chemical mechanical polishing composition for tungsten consists of claim 9 , as initial components:the water;0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;20 to 320 ppm of the nonionic polyacrylamide;0.01 to 10 wt % of the colloidal silica abrasive having a negative zeta potential;100 to 1,400 ppm of the dicarboxylic acid, salt thereof or mixtures thereof, wherein the dicarboxylic acid, salt thereof or mixtures thereof is malonic acid, salt thereof or mixtures thereof;100 to 1,000 ppm of the source of iron (III) ions, wherein the source of iron (III) ...

DISPERSION LIQUID OF SILICA PARTICLES, POLISHING COMPOSITION, AND METHOD FOR PRODUCING DISPERSION LIQUID OF SILICA PARTICLES

A polishing composition that can not only achieve high polishing speed, but also can improve the surface smoothness (surface quality) of a polished substrate and reduce defects is provided. That is, provided is a polishing composition comprising silica particles and a water soluble polymer, wherein the contained silica particles satisfy the following requirements (a) to (c): (a) the primary particle diameter based on the specific surface area is 5 to 300 nm; (b) the coefficient of variation in the particle diameter is 10% or less; and (c) the Sears number Y is 10.0 to 12.0. 1. A dispersion liquid of silica particles , containing silica particles satisfying the following requirements (a) to (c):(a) a primary particle diameter calculated based on a specific surface area determined by a BET method using nitrogen adsorption is 5 to 300 nm;(b) a coefficient of variation in a particle diameter is 10% or less; and(c) a Sears number Y is 10.0 to 12.0.2. The dispersion liquid of silica particles according to claim 1 , wherein the silica particles have a Sears number y calculated for one particle in a range of (2.92×10×d−7.10×10)≤y≤(2.92×10×d−6.10×10){'sup': '2', '(wherein d is a primary particle diameter [nm] calculated based on a specific surface area (SA [m/g]) determined by a BET method using nitrogen adsorption).'}3. The dispersion liquid of silica particles according to claim 1 , wherein the silica particles have a density by a pycnometer method of 1.80 g/cmor more.4. A polishing composition comprising silica particles and a water soluble polymer claim 1 , wherein the silica particles satisfy the following requirements (a) to (c):(a) a primary particle diameter calculated based on a specific surface area determined by a BET method using nitrogen adsorption is 5 to 300 nm;(b) a coefficient of variation in a particle diameter is 10% or less; and(c) a Sears number Y is 10.0 to 12.0.5. The polishing composition according to claim 4 , wherein the water soluble polymer is ...

SURFACE TREATMENT COMPOSITION, METHOD FOR PRODUCING SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished. 1. A composition for surface treatment comprising: a silicone-based compound having an HLB of more than 7; and water , the composition used to treat a polished object to be polished.2. The composition for surface treatment according to claim 1 , further comprising a dispersant.3. The composition for surface treatment according to claim 2 , wherein the dispersant is a polymer.4. The composition for surface treatment according to claim 1 , the composition containing substantially no abrasive grain.5. The composition for surface treatment according to claim 1 , wherein the polished object to be polished contains polysilicon or silicon oxide.6. A method for manufacturing the composition for surface treatment according to claim 1 , the method comprising mixing a silicone-based compound having an HLB of more than 7 and water.7. A method for surface treatment claim 1 , the method comprising treating a surface of a polished object to be polished using the composition for surface treatment according to .8. The method for surface treatment according to claim 7 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.9. A method for manufacturing a semiconductor substrate claim 7 , the method comprising treating a surface of a polished object to be polished by the method for surface treatment according to claim 7 ,wherein the polished object to be polished is a polished semiconductor substrate. The present invention relates to a composition for surface treatment, a method for manufacturing the composition for surface treatment, a method for surface treatment, and a method for manufacturing a semiconductor ...

COMPOSITION AND METHOD FOR POLISHING AND INTEGRATED CIRCUIT

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer. 1. A slurry composition for polishing , comprising: at least one liquid carrier;', 'at least one abrasive; and', 'at least one pH adjusting agent; and, 'a slurry comprisingat least one cationic surfactant having at least one nitrogen atom in the molecule, wherein the cationic surfactant having at least one nitrogen atom in the molecule comprises an alkylated amine, an alkoxylated amine, an alkylated nitrogen-containing heterocyclic compound, an alkoxylated nitrogen-containing heterocyclic compound, or a mixture thereof, and is present in the slurry composition in an amount of at least 20 ppm by weight.2. The slurry composition of claim 1 , wherein the cationic surfactant contains a linear or branched alkyl group having at least 4 carbon atoms.3. The slurry composition of claim 1 , wherein the cationic surfactant contains at least one linear or branched alkoxylated repeating group containing at least two carbon atoms and one oxygen atom.4. The slurry composition of claim 1 , wherein the cationic surfactant is present in the slurry composition in an amount ranging from 1 claim 1 ,000 to 10 claim 1 ,000 ppm by weight.5. The slurry composition of claim 1 , further comprising at least one viscosity improver.6. The slurry composition of claim 5 , wherein the viscosity improver comprises at least one divalent cation claim 5 , at least one trivalent cation ...

Silicon wafer polishing composition and method

A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight percent to about 2 weight percent of a dipolar aprotic solvent at point of use, and a pH in a range from about 8 to about 12. A method for polishing a silicon wafer may include contacting the wafer with the above described polishing composition, moving the polishing composition relative to the wafer, and abrading the wafer to remove silicon from the wafer and thereby polish the wafer.

MIXTURE COMPOSITION CONTAINING AMINO-FUNCTIONAL SILOXANES, HYDROPHOBIC PARTICLES AND HIGH MOLECULAR WEIGHT SILICONES AND ITS USE FOR LEATHER TREATMENT

The invention relates to mixture compositions containing amino-functional siloxanes, hydrophobic particles and high molecular weight silicones and their use for leather treatment. 1. A mixture composition comprising:A) 50 wt % -96.5 wt % of at least one amino-functional siloxane,B) 3 wt% -40 wt% of at least one high molecular weight silicone having a molecular weight average of at least 20,000 g/mol, andC) 0.5 wt % -10 wt % of hydrophobic particles, wherein the weight percentages are based on total components A), B) and C).3. A mixture composition according to claim 2 , wherein at least 50% of the Rmoieties are=R.4. A mixture composition according to claim 1 , wherein said at least one high molecular weight silicone is selected from the group consisting of linear silicone oils and branched silicone resins.5. A mixture composition according to claim 1 , wherein said hydrophobic particles have having a particle size distribution maximum in a range from 0.5-30 μm.6. A mixture composition according to claim 1 , wherein said hydrophobic particles are selected from hydrophobic or hydrophobized metal oxides claim 1 , metal soaps claim 1 , alkaline earth metal carbonates and alkaline earth metal salts of long-chain fatty acids having 12 to 22 carbon atoms claim 1 , amides of said fatty acids claim 1 , micronized waxes claim 1 , and oligo-ureas.7. A mixture composition according to claim 2 , wherein{'sup': 1', '3, 'sub': 2', '3', '2', '2', '3', '2', '2', '2, 'Rof formula (I) represents methyl and Rof formula (I) represents —(CH)—NHor —(CH)NH—(CH)NH, and'}{'sup': 5', '6', '6', '5, 'sub': 2', '1/2', '4/2, 'component B) is selected from the group of methyl- and/or phenyl-substituted having average molecular weights of more than 50 000 g/mol, or from the group of branched silicone resins consisting essentially of RRSiO(“M”)- and SiO(“Q”)- and/or RSiO3/2 (“T”) units, where Rrepresents methyl and the molar ratio M to Q and T units (M/(Q+T)) is in a range from 0.5/1 to 1.5/1 and ...

POLISHING COMPOSITION

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished. 1. A polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished , comprising:a cobalt dissolution inhibitor; anda pH adjusting agent, whereinthe polishing composition has a pH of 4 or more and 12 or less, andthe cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof.2. The polishing composition according to claim 1 , wherein the organic compound having an ether bond has a polyoxyethylene structure and/or a polyoxypropylene structure.3. The polishing composition according to claim 1 , wherein the organic compound having a hydroxyl group has an alcohol skeleton or a phenol skeleton.4. The polishing composition according to claim 1 , wherein the cobalt dissolution inhibitor is an organic compound having an ether bond and a hydroxyl group.5. A method of polishing a polishing object having a cobalt element-containing layer claim 1 , wherein a metal wiring layer is polished ...

POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent. 1. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive , wherein the additive contains at least one selected from the group consisting of the following compounds (1) and (2):(1) an allylamine polymer or a derivative thereof and(2) a diallylamine polymer or a derivative thereof2. The polishing agent according to claim 1 , wherein the average particle size of the tetravalent metal hydroxide particles is from 1 nm to 400 nm.3. The polishing agent according to claim 1 , wherein the pH of the polishing agent is from 3.0 to 7.0.4. The polishing agent according to claim 1 , wherein the content of the tetravalent metal hydroxide particles is from 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the polishing agent.5. The polishing agent according to claim 1 , wherein the zeta potential of the tetravalent metal hydroxide particles in the polishing agent is +10 mV or higher.6. The polishing agent according to claim 1 , wherein the content in total of the additive is 0.0001 by weight or more relative to 100 parts by weight of the polishing agent.7. The polishing agent according to claim 1 , further comprising polyvinyl alcohol.8. The polishing agent according to claim 1 , which is used for polishing a surface to be polished containing at least silicon oxide at the surface.9. The ...

SLURRY COMPOSITION FOR POLISHING TUNGSTEN

A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster. 1. A slurry composition for polishing tungsten , the slurry composition comprising:a water-soluble polymer;abrasive particles; andan etching adjuster.2. The slurry composition of claim 1 , wherein the water-soluble polymer comprises at least one selected from the group consisting of polystyrene sulfonic acid claim 1 , polyvinyl sulfonic acid claim 1 , polyacrylamide methylpropane sulfonic acid claim 1 , poly-α-methylstyrene sulfonic acid claim 1 , poly-ρ-methylstyrene sulfonic acid and salts thereof.3. The slurry composition of claim 1 , wherein the water-soluble polymer is present in an amount of 0.01% by weight (wt %) to 5 wt % in the slurry composition.4. The slurry composition of claim 1 , wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide claim 1 , a metal oxide coated with an organic material or inorganic material and the metal oxide in a colloidal phase claim 1 , andwherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia.5. The slurry composition of claim 1 , wherein the abrasive particles have a particle size of 20 nanometers (nm) to 250 nm claim 1 , and comprise abrasive particles having the same particle size or at least two different particle sizes.6. The slurry composition of claim 1 , wherein the abrasive particles are present in an amount of 1 wt % to 5 wt % in the slurry composition.8. The slurry composition of claim 1 , wherein the etching adjuster comprises at least one selected from the group consisting of lactic acid claim 1 , propionic acid claim 1 , isovaleric acid claim 1 , caproic acid claim 1 , isobutyric acid claim 1 , valeric acid claim 1 , butyric acid claim 1 , cyclopentanecarboxylic ...

POLISHING COMPOSITION AND METHOD FOR POLISHING SYNTHETIC RESIN

There is provided a polishing composition which can be more suitably used for polishing a synthetic resin product or the like, and a polishing method for polishing a polishing object using a polishing composition. There is provided a polishing composition containing abrasives, 0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt, a pyrrolidone compound or a caprolactam compound, and water and having a pH of 7.0 or less. 1. A polishing composition comprising:abrasives;0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt;a pyrrolidone compound or a caprolactam compound; andwater, whereina pH is 7.0 or less.2. The polishing composition according to claim 1 , wherein the pH is 4.5 or less.3. The polishing composition according to claim 1 , wherein the pH is 3.4 or less.4. The polishing composition according to claim 1 , wherein the abrasives contain alumina.5. The polishing composition according to claim 4 , wherein a volume-based average particle diameter of the alumina is 0.1 μm or more and 0.5 μm or less.6. The polishing composition according to claim 4 , wherein a BET specific surface area of the alumina is 10 m/g or more and 50 m/g or less.7. The polishing composition according to claim 4 , wherein an α-conversion rate of the alumina is 50% or more.8. The polishing composition according to claim 1 , wherein the abrasives contain silica.9. The polishing composition according to claim 8 , whereina volume-based average particle diameter of the silica is 0.02 μm or more and 0.3 μm or less.10. The polishing composition according to claim 1 , whereina content of the monovalent acid-aluminum salt is 5% by mass or more and 15% by mass or less.11. The polishing composition according to claim 1 , whereinthe monovalent acid-aluminum salt is at least one selected from aluminum nitrate or aluminum chloride.12. The polishing composition according to claim 1 , wherein the polishing composition is used for polishing a ...

CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3: 4. The CMP slurry composition as claimed in claim 1 , wherein the biocide is present in an amount of about 0.001 wt % to about 1 wt % claim 1 , based on a total weight of the CMP slurry composition.5. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a pH of about 3 to about 6.8. The CMP slurry composition as claimed in claim 1 , further comprising an oxidizing agent claim 1 , a catalyst claim 1 , or an organic acid.9. The CMP slurry composition as claimed in claim 8 , wherein the CMP slurry composition includes:about 0.001 wt % to about 20 wt % of the abrasive agent;about 0.001 wt % to about 1 wt % of the biocide;about 0.01 wt % to about 20 wt % of the oxidizing agent;about 0.001 wt % to about 10 wt % of the catalyst; andabout 0.001 wt % to about 20 wt % of the organic acid.10. A method of polishing a tungsten pattern wafer claim 1 , the method comprising polishing a tungsten pattern wafer using the CMP slurry composition as claimed in .13. The method as claimed in claim 10 , wherein the biocide is present in an amount of about 0.001 wt % to about 1 wt % claim 10 , based on a total weight of the CMP slurry composition.14. The method as claimed in claim 10 , wherein the CMP slurry composition has a pH of about 3 to about 6.17. The method as claimed in claim 10 , wherein the CMP slurry composition further includes an oxidizing agent claim 10 , a catalyst claim 10 , or an organic acid.18. The method as claimed in claim 17 , wherein the CMP slurry composition includes:about ...

CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6. 1. A chemical-mechanical polishing (CMP) composition comprising:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6,(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid,(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of ranges from 2 to 6.2. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions or modified with sulfonic acid.3. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions selected from the group consisting of aluminate claim 1 , stannate claim 1 , zincate claim 1 , and plumbate.4. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with aluminate.5. The chemical-mechanical polishing (CMP) composition according to claim 1 , whereinthe total amount of (A) surface modified silica particles having a negative ...

CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING MULTIPLE FILMS AND POLISHING METHOD USING THE SAME

A chemical mechanical polishing (CMP) slurry composition for polishing multiple films and a polishing method using the CMP slurry composition are provided. The CMP slurry composition includes abrasive particles, a surface roughness modifier including a water-soluble polymer, a polishing regulator including an organic acid, and a polishing profile improving agent including a nonionic surfactant. 1. A chemical mechanical polishing (CMP) slurry composition for polishing multiple films , the CMP slurry composition comprising:abrasive particles;a surface roughness modifier comprising a water-soluble polymer;a polishing regulator comprising an organic acid; anda polishing profile improving agent comprising a nonionic surfactant;2. The CMP slurry composition of claim 1 , further comprising a defect improving agent comprising an anionic surfactant.3. The CMP slurry composition of claim 2 , wherein the anionic surfactant comprises at least one selected from the group consisting of polyacrylic acid claim 2 , polymethacrylic acid claim 2 , a polystyrene-acrylic acid copolymer claim 2 , an acrylic acid-maleic acid copolymer claim 2 , an acrylic acid-ethylene copolymer claim 2 , an acrylic acid-acrylamide copolymer claim 2 , and an acrylic acid-poly acrylamide copolymer.4. The CMP slurry composition of claim 2 , wherein the defect improving agent is present in an amount of 0.005% by weight (wt %) to 0.1 wt % in the CMP slurry composition.5. The CMP slurry composition of claim 1 , whereinthe abrasive particles comprise at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic material or inorganic material, and a metal oxide in a colloidal phase, andthe metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia.6. The CMP slurry composition of claim 1 , wherein the abrasive particles are prepared by a liquid-phase method claim 1 , ...

HARD ABRASIVE PARTICLE-FREE POLISHING OF HARD MATERIALS

A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mmor Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mmis pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface. 1. A slurry for chemical-mechanical polishing (CMP) , comprising:an aqueous medium;at least one per-compound oxidizer with a concentration between 0.01 M and 2.0 M;a pH level from 2 to 5 or from 8 to 11;at least one buffering agent different from said per-compound oxidizer that provides a buffering ratio of at least 1.5 which compares an amount of a strong acid needed to reduce said pH level from 9.0 to 3.0 with said buffering agent in a slurry solution comprising said aqueous medium and said per-compound oxidizer as compared to an amount of said strong acid needed to change reduce said pH level from 9.0 to 3.0 in said slurry solution without said buffering agent;{'sup': '2', 'wherein said slurry is exclusive of any hard slurry particles, or has only soft slurry particles that have throughout a Vickers hardness less than 300 Kg/mmor a Mohs Hardness less than (<) 4.'}2. The slurry of claim 1 , wherein said slurry solution further comprises transition metal ions in a concentration from 0.03 M to 1 M in addition to any transition metals ions that may be in said per-compound oxidizer.3. The slurry of claim 1 , wherein said slurry includes said soft slurry particles which comprise a metal oxide ...

POLISHING COMPOSITION

To provide a polishing composition in which abrasives are less likely to precipitate and precipitated and agglomerated abrasives easily redisperse. A polishing composition has abrasives, a liquid medium, metal oxide particles, and a water-soluble polymer. The average primary particle diameter of the metal oxide particles is 1/10 or less of the average primary particle diameter of the abrasives and the weight average molecular weight of the water-soluble polymer is 200 or more and 1000 or less. 1. A polishing composition comprising:abrasives;a liquid medium;metal oxide particles; anda water-soluble polymer, whereinan average primary particle diameter of the metal oxide particles is 1/10 or less of an average primary particle diameter of the abrasives and a weight average molecular weight of the water-soluble polymer is 200 or more and 1000 or less.2. The polishing composition according to whereinthe metal oxide is fumed alumina.3. The polishing composition according to claim 1 , whereinthe water-soluble polymer comprises at least either one of polyethylene glycol and polypropylene glycol.4. The polishing composition according to claim 1 , whereinthe abrasives comprise aluminum oxide particles.5. The polishing composition according to claim 2 , whereinthe water-soluble polymer comprises at least either one of polyethylene glycol and polypropylene glycol.6. The polishing composition according to claim 2 , whereinthe abrasives comprise aluminum oxide particles.7. The polishing composition according to claim 3 , whereinthe abrasives comprise aluminum oxide particles. The present invention relates to a polishing composition.When objects to be polished made of resin is polished using a slurry-like polishing composition, the polishing composition needs to be fed from a storage tank of the polishing composition to a polishing place of the objects to be polished using a tube or the like.However, abrasives in the polishing composition are likely to precipitate, and therefore ...

POLISHING COMPOSITION FOR MAGNETIC DISK SUBSTRATE

Embodiments relate to a polishing composition including colloidal silica, pulverized wet-process silica particles, and at least one of a nitrogen-containing organic compound and a nitrogen-containing polymer compound. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, a nitrogen-containing organic compound and/or a nitrogen-containing polymer compound, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. 1. A polishing composition for a magnetic disk substrate , the polishing composition comprising:colloidal silica having an average primary particle size of 5 to 200 nm;pulverized wet-process silica particles having an average particle size of 100 to 1000 nm;at least one of a nitrogen-containing organic compound and a nitrogen-containing polymer compound; andwater,wherein the colloidal silica accounts for 5 to 95 mass %, and the pulverized wet-process silica particles account for 5 to 95 mass %, of total silica particles, andwherein a concentration of the total silica particles is 1 to 50 mass %.2. A polishing composition for a magnetic disk substrate , the polishing composition comprising:colloidal silica having an average primary particle size of 5 to 200 nm;pulverized wet-process silica particles having an average particle size of 100 to 1000 nm;a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers; andwater;wherein the colloidal silica accounts for 5 to 95 mass %, and the pulverized wet-process silica particles account for 5 to 95 mass %, of total silica particles, andwherein a ...

POLISHING SLURRY AND POLISHING MATERIAL

A polishing slurry according to the present invention contains: abrasive grains made of a metal oxide; a permanganate; and an inorganic compound other than the permanganate. The inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate. It is preferable that the inorganic compound be contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate. It is also preferable that the abrasive grains made of a metal oxide be manganese oxide particles. 1. A polishing slurry comprising:abrasive grains made of a metal oxide;a permanganate; andan inorganic compound other than the permanganate,wherein the inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate.2. The polishing slurry as set forth in claim 1 ,wherein the inorganic compound is contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate.3. The polishing slurry as set forth in claim 1 ,wherein the abrasive grains made of a metal oxide are manganese oxide particles.4. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry has a pH at 25° C. of 1.0 or more and 8.0 or less before polishing.5. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry is used in polishing that does not use fixed abrasive grains.6. A polishing material comprising:a first agent that contains abrasive ...

NEUTRAL TO ALKALINE CHEMICAL MECHANICAL POLISHING COMPOSITIONS AND METHODS FOR TUNGSTEN

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten. 1. A chemical mechanical polishing composition comprising , as initial components: water;an oxidizing agent selected from the group consisting of iodate compounds, periodate compounds and mixtures thereof;colloidal silica abrasive particles comprising a nitrogen-containing compound;optionally, a pH adjusting agent; and,optionally, a biocide; and wherein a pH of the chemical mechanical polishing composition is equal to or greater than 7.2. The chemical mechanical polishing composition of claim 1 , wherein the oxidizing agent is in amounts of 0.001 wt % or greater.3. The chemical mechanical polishing composition of claim 1 , wherein the iodate compounds are selected from the group consisting of alkali metal iodates claim 1 , calcium diiodate claim 1 , magnesium diiodate claim 1 , ammonium iodate claim 1 , and mixtures thereof.4. The chemical mechanical polishing composition of claim 1 , wherein the periodate compounds are selected from the group consisting of alkali metal periodates claim 1 , calcium diperiodate claim 1 , magnesium diperiodate claim 1 , ammonium periodate and mixtures thereof.5. The chemical ...

INTERMEDIATE POLISHING COMPOSITION FOR SILICON SUBSTRATE AND POLISHING COMPOSITION SET FOR SILICON SUBSTRATE

Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A, a basic compound B, and a surface protective agent S. The surface protective agent Sincludes a water-soluble polymer Phaving a weight average molecular weight of higher than 30×10and a dispersant D, and has a dispersibility parameter αof less than 80%. 1. An intermediate polishing composition to be used in an intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and a final polishing step , the intermediate polishing composition comprising:{'sub': 1', '1', '1, 'an abrasive A, a basic compound B, and a surface protective agent S, wherein'}{'sub': 1', '1', '1, 'sup': '4', 'the surface protective agent Sincludes a water-soluble polymer Phaving a weight average molecular weight of higher than 30×10and a dispersant D, and'}{'sub': 1', '1, 'a dispersibility parameter αof the surface protective agent Sis less than 80%.'}2. The intermediate polishing composition according to claim 1 , wherein a content of the dispersant Dis 0.8 times or less a content of the water-soluble polymer P.3. The intermediate polishing composition according to claim 1 , wherein a weight average molecular weight of the dispersant Dis 3×10or less.4. The intermediate polishing composition according to claim 1 , wherein the surface protective agent Sincludes a cellulose derivative as the water-soluble polymer P.5. The intermediate polishing composition according to claim 1 , wherein a content of the surface protective agent ...

Polishing composition and method for producing semiconductor substrate

A polishing composition contains: silicon dioxide having an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by the BET method; a nitrogen-containing water-soluble polymer; and a basic compound. The value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 1,500,000 when in one liter of the polishing composition, A is defined as the number of silicon dioxide, B is defined as the number of monomer units of the nitrogen-containing water-soluble polymer, and C is defined as the number of molecules of the basic compound. Alternatively, the value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 100,000. The polishing composition is used, for example, for polishing a semiconductor substrate.

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) elemental germanium or (ii) SiGewith 0.1≦x<1, wherein the CMP composition (Q) consists essentially of (A) aluminum particles in an amount of from 0.01 to 3 wt. % based on the total weight of the CMP composition (B) at least one oxidizer, (M) an aqueous medium and (N) optionally at least one pH adjusting agent wherein the CMP composition (Q) has a pH of from 2 to 6. 1. A method for chemical mechanical polishing of a substrate comprising elemental germanium or is represented by the formula SiGewith 0.1≦x<1 , wherein the method comprising applying a composition onto the substrate , the composition comprises:aluminum particles in an amount of 0.01 to 3 wt. % based on the total weight of the compositionat least one oxidizer,an aqueous medium andoptionally at least one pH adjusting agent andwherein the composition has a pH of 2 to 6.2. The method according to claim 1 , wherein the aluminum particles comprise fumed aluminum oxide.3. The method according to claim 1 , wherein the aluminum particles comprise at least 95 wt. % of aluminum oxide (AlO).4. The method according to claim 1 , wherein the aluminum particles have a specific surface area (BET) of 20 to 90 m/g.5. The method according to claim 1 , wherein the aluminum particles have a particle diameter claim 1 , d claim 1 , of 5 to 200 nm.6. The method according to claim 1 , wherein the oxidizer comprises a peroxide.7. The method according to claim 1 , wherein the amount of oxidizer is present in an amount of 0.2 to 3 wt % based on the total weight of the composition.8. The method according to claim 1 , wherein the oxidizer is hydrogen peroxide.9. The method according to claim 1 , wherein-the having a pH value is in the range of 3 to 5.10. The method according to claim 1 , wherein the elemental germanium is grown in trenches between shallow-trench isolation silicon dioxide.11. A process for ...

SEMICONDUCTOR SUBSTRATE POLISHING METHODS

Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set. 1. A method for polishing a semiconductor substrate having a front surface and a back surface generally parallel to the front surface , the method comprising contacting the front surface of the substrate with a polishing pad in the presence of a polishing slurry , the polishing slurry comprising:{'sub': '1', 'a first set of silica particles, the first set of silica particles having a silica content of Xwt %; and'}{'sub': 2', '2', '1, 'a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of Xwt %, wherein Xis greater than X, wherein the weight ratio of the first set of silica particles to the second set of silica particles is from about 5:1 to about 1:5.'}2. The method as set forth in wherein the first set of silica particles are polymer-encapsulated.3. The method as set forth in wherein the back surface is not polished while polishing the front surface and wherein at least about 5 μm of material is removed from the front surface of the substrate.4. The method as set forth in wherein the substrate has a diameter of about 200 mm.5. The method as set forth in wherein the ratio of Xto about Xis at least about 2:1.6. The method as set forth in wherein the first set of silica particles and the second set of silica particles each have an average diameter of less than about 100 nm and the difference between the average diameter of the first set of particles and the average diameter of the second set of particles is less than about 30 nm.7. The method as set forth in comprising polishing a population of wafers with the polishing slurry claim 1 , wherein at least about 20% of the wafers have a roll-off amount of less than about −35 nm.8. The method as set forth in wherein the roll ...

Air purifying coating system and method for making same

An air purifying coating system and method for making same having a carrier agent and a diatomic frustule titanium dioxide particle dispersion combined with the carrier agent. The coating system may include 70-99.9 weight percent carrier agent and 0.1-30 weight percent diatomic frustule titanium dioxide particle dispersion. The carrier agent of the coating system may include a cleaning agent or a polishing agent. The diatomic frustule titanium dioxide particle dispersion may include 1-35 micron particle size diatomic frustule titanium dioxide particles combined with water and dispersion additive. The dispersion may further include an anti-settling additive, a rheology additive, and/or a defoamer.

SLURRY AND POLISHING METHOD

A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound. 1. A slurry for polishing a carbon-containing silicon oxide , the slurry comprising:abrasive grains and a liquid medium, whereinthe abrasive grains include first particles and second particles in contact with the first particles,a particle size of the second particles is smaller than a particle size of the first particles,the first particles contain cerium oxide, andthe second particles contain a cerium compound.2. The slurry according to claim 1 , wherein claim 1 , in a case where a content of the abrasive grains is 0.1% by mass claim 1 , an absorbance for light having a wavelength of 380 nm in a liquid phase obtained when the slurry is subjected to centrifugal separation for 5 minutes at a centrifugal acceleration of 5.8×10G exceeds 0.3. The slurry according to claim 1 , wherein the cerium compound contains cerium hydroxide.4. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01 to 10% by mass.5. A polishing method comprising a step of polishing a surface to be polished by using the slurry according to .6. The polishing method according to claim 5 , wherein the surface to be polished comprises a carbon-containing silicon oxide.7. The slurry according to claim 1 , wherein a particle size of the first particles is 100 nm or more.8. The slurry according to claim 1 , wherein a particle size of the second particles is 30 nm or less.9. The slurry according to claim 1 , wherein an average particle size of the abrasive grains is 120 nm or more.10. The slurry according to claim 1 , wherein a content of cerium oxide in the abrasive ...